baber/WOPTO huggingface dataset:
Patent TW-430979-B (TW)
Title: Voltage source adjustment system on IC
Inventor: TERNULLO JR LUIGI
IPC: H01L27/10
Filed: 1999-07-23
Granted: 2001-04-21
Abstract: The present invention is a voltage source adjustment system on IC, which comprises the first and the second voltage sensing circuit connected to a voltage generation controlling circuit. The first and the second voltage sensing circuit are used to monitor the output voltage level of the voltage generator on the chip (also called the voltage source on the chip), and detect if the voltage of the voltage source has reached the preset threshold potential. Especially, these threshold potentials are predefined proper ranges according to the voltage source of the chip. The voltage generation control circuit can receive the sensed voltage signal sent from the voltage sensing circuit, then determines whether to send the signal to activate the voltage generator or not to maintain the output voltage in the above mentioned proper range. The present invention reduces the operation frequency of the voltage generator, therefore, the power dissipation can be reduced, and the noise can be reduced too. The voltage generation signal generated by the voltage generation controlling circuit and sent to the chip has the hysteresis phenomenon which means when the output voltage of the voltage generator reaches the high threshold potential, the voltage generation controlling circuit will stop the function of the voltage generator. On the contrary, when the output voltage of the voltage generator reaches the low threshold potential, the voltage generation controlling circuit will start the function of the voltage generator.
Patent TW-474026-B (TW)
Title: Electrode, semiconductor device and methods for making them
Inventor: MORITA ETSUO
IPC: H01S5/323
Filed: 1999-07-23
Granted: 2002-01-21
Abstract: In a semiconductor device such as GaN semiconductor laser having an electrode formed on a nitride III-V compound semiconductor layer containing at least Ga, such as GaN layer, at least a part of the electrode in contact with the nitride III-V compound semiconductor layer is made of a y-GaNi alloy or a y'-GaNi alloy. The electrode is made by first stacking the y-GaNi alloy layer or y'-GaNi alloy layer, or its component elements, on the nitride III-V compound semiconductor layer, and then annealing it at a temperature not lower than 680 DEG C, or by stacking any of them on the nitride-compound III-V compound semiconductor layer heated to a temperature not lower than 680 DEG C. At least a part of the electrode in contact with the nitride III-V compound smiconductor layer may be made of an alloy of Ga and at least one kind of element selected from the group consisting of Pt, Ag, Pd, Mg, Hf, Al, Cr, Ti, Mo, W, Zr, Si and Ge.
Patent TW-464488-B (TW)
Title: Marrow nail
Inventor: AHRENS UWE
IPC: A61B17/72
Filed: 1999-10-01
Granted: 2001-11-21
Abstract: The present invention relates to a marrow nail with screws for securing the nail in a bone and provided with a plurality of recesses into which these screws can be inserted, and that is attachable at its proximal end to a holding arrangement to facilitate the insertion and extraction of the nail, and including external and/or internal threading provided at the proximal end for securing the holding arrangement. In addition, the marrow nail is provided with a notch (3, 10) perpendicular to the axis of the marrow nail at the extreme proximal end and threading (2) at the proximal end into which a cap (4) with corresponding threading (6) can be screwed, this cap having, near the inside surface of the cap (7), a through bore (5) that can be aligned with the notch (3) and through which a further screw can be inserted.
Patent TW-432511-B (TW)
Title: Manufacturing process for forming semiconductor device having a dual-layer silicide
Inventor: CHEN JR-RUNG
IPC: H01L21/28
Filed: 1999-10-11
Granted: 2001-05-01
Abstract: The present invention provides a manufacturing process for forming semiconductor device having a dual-layer silicide gate and a single-layer silicide source/drain. The method comprises the steps of: (1) providing a semiconductor substrate formed thereon a field oxide layer that surrounds and electrically isolates from the device area; (2) forming a gate oxide layer on the device area; (3) depositing a polysilicon layer on the exposed surface between the gate oxide layer and the field oxide area; (4) forming a first silicide layer; (5) using a photoresist etching mask to pattern-etch the first silicide layer and the polysilicon layer thereby forming a gate on the device area; (6) using the gate as a mask to implant ions into the device area of the semiconductor substrate thereby forming a lightly doped drain area; (7) forming a spacer on the sidewall of the gate; (8) using the gate and the spacer as a mask to implant ions into the device area of the semiconductor substrate thereby forming a heavily doped source/drain area; and (9) forming a second silicide layer on the gate and source/drain areas.
Patent TW-434682-B (TW)
Title: Method for manufacturing a semiconductor wafer using a mask that has several regions with different scattering ability
Inventor: CUMMINGS KEVIN DAVID
IPC: G03F1/20
Filed: 1999-11-04
Granted: 2001-05-16
Abstract: A lithographic mask (FIG.9 or FIG.10) that is primarily used for SCALPEL processing has a substrate (100). Layers (102, 104, 106, 108, 110, and 112) are formed and selectively patterned and etched to form E-beam exposure windows (118) and skirt regions (120) framing the windows (118). The skirt regions (120) and some portions of the patterned features (124) within the window (118) are formed having thicker/thinner regions of material or formed of different material whereby different regions of the mask (FIG.9) scatter energy to differing degrees. The different scattering regions on the mask allow SCALPEL patterns to be formed on the wafer with improved critical dimension (CD) control, reduced aberrant feature formation, and improved yield.
Patent TW-I238155-B (TW)
Title: Methods for preparing aryl ethers, the intermediates therefor and methods for preparing the intermediates
Inventor: HENEGAR KEVIN E
IPC: C07D301/02
Filed: 1999-12-24
Granted: 2005-08-21
Abstract: The invention relates to a method for preparing aryl ethers that are useful as antidepressants. The invention also relates to intermediates useful in the method and to methods for preparing such intermediates.
Patent TW-442624-B (TW)
Title: Valve with detection function
Inventor: JUNG JIN-CHIUAN
IPC: F16K37/00
Filed: 2000-02-18
Granted: 2001-06-23
Abstract: This invention provides a method and device to confirm whether the real opening state of a valve is same as the specified opening state of a valve. The fundamental structure of this invention includes at least one pipe, a switch unit and at least one detector. The pipe has at  least one inlet and at least one outlet. The switch unit is coupled with the pipe to change the opening states of the inlet and outlet. The detector detects the condition of the switch unit and confirms whether the flow passage between any inlet and any outlet is unobstructed or not. Compared to a prior technique, the most important characteristics of this invention is to add detection function to a valve to confirm whether the real opening state of a valve is same to the specified opening state of a valve.
Patent TW-466273-B (TW)
Title: Method for cold-rolling annealing alloy cast sheet made from sheet casting rolling process
Inventor: JOU DUNG-SHENG
IPC: C21D1/26
Filed: 2000-02-18
Granted: 2001-12-01
Abstract: The present invention provides a novel cold-rolling annealing method, which comprises: controlling the 1XXX series of aluminum alloy cast sheet made from a sheet casting rolling process; a subsequent cold-rolling step; a homogenizing step; another cold-rolling step; and an annealing heat-treatment step, to modify the recrystallization mechanism, thereby obtaining a uniform dense recrystallization grain texture, while weakening the intensity of the cubic orientation group structure ({001}100). The method achieves the objectives of improving the elongation and the protrusion rate of the cold-rolled annealed aluminum alloy sheet, thereby providing a method of producing an aluminum alloy sheet for capacitance enclosure having a good forming property from a dual-calender sheet casting rolling process.
Patent TW-471233-B (TW)
Title: Disposable hearing aid with integral power source
Inventor: ACETI JOHN
IPC: H04R25/02
Filed: 2000-03-04
Granted: 2002-01-01
Abstract: A hearing aid includes a microphone, signal processing circuitry, receiver and integral battery all mounted in a casing. The battery may be a metal air device. The battery may be activated by removing a tape which blocks air holes on the battery or, if the battery is sealed into the hearing aid, air-vent holes on the hearing aid. The hearing aid may also include an air-blocking mechanism which is activated when the hearing aid is inserted in the user's ear and deactivated when the hearing aid is removed. The assembled hearing aid may also be packaged in non-permeable packaging material to extinguish battery activity. The hearing aid may also include an electronic switch which monitors the battery potential to disconnect the battery from the hearing aid electronics when the battery is deprived of oxygen and which connects the battery to the electronics when oxygen is provided to the battery. In one embodiment of the invention, the integral battery is a rechargeable battery which is recharged via external contacts. In another embodiment, the battery is recharged using an induced alternating current potential which is rectified before being applied to the battery.
Patent TW-465088-B (TW)
Title: Memory-cells arrangement and its production method
Inventor: SELL BERNHARD
IPC: H01L27/105
Filed: 2000-03-27
Granted: 2001-11-21
Abstract: A transistor of a memory-cell has an upper (S/DO) and an under source/drain-region, which are arranged between two 1st trenches (G1) and two 2nd trenches which extend normal to said 1st trenches (G1). An isolated word-line (W) overlaps the upper source/drain-region (S/DO) and has eversions, which reach in the 2nd trenches (G2). A conductive structure (L), which is arranged in a one of the 1st trenches (G1) and is on the side adjacent to the upper source/drain-region (S/DO), is contacted from above through a contact (K), which is arranged between adjacent word-lines (W). The contact (K) is connected with a capacitor of the memory-cell.
Patent TW-441003-B (TW)
Title: Structure of dielectric layer and method for making the same
Inventor: LIN MIN-YI
IPC: H01L21/76
Filed: 2000-03-31
Granted: 2001-06-16
Abstract: The present invention provides a structure of a dielectric layer and a method for making the same. The structure of the dielectric layer comprises a silicon oxide installed between two adjacent metal wires on a semiconductor chip. The two adjacent metal wires are formed by a dual damascene process. The structure of the dielectric layer according to the present invention comprises at least a trench installed on the surface of the dielectric layer, an insulation layer installed in the trench, and at least a void formed in the trench by using the insulation layer, in which the void is used to reduce the effective dielectric constant of the dielectric layer and the parasitic capacitance between the adjacent metal wires.
Patent TW-438934-B (TW)
Title: Ceiling cabinet with rotation door
Inventor: IIJIMA TADASHI
IPC: E05D15/26
Filed: 2000-05-02
Granted: 2001-06-07
Abstract: This invention relates to the overhead cabinet which can be put and received in the ceiling of the door assembly unit, and the door can be opened from the closed door state by pulling the lower portion of the rotation door forward to the face. Since the door assembly unit is made into the special connection pivoting construction, it does not require the use of the light-priced slide rail. Besides, it is aimed at simplifying the entry-exit operation of the articles. The rotation arm B3 of the base-fixing-accessary B used for open and close which is fixed on the side-plate-inner-wall 10 m of the door assembly unit 10, is made to pivotably rotate the rotation door 10a with the door-open-close-pin B5. If the rotation door 10 a is opened manually then due to the bending of the ceiling hinge 10g and the door hinge, the door-side-movable-ceiling 10h and the rotation door 10a is made to move sequentiablly over the inside-fix-mount-ceiling 10f and be laminately placed in a collapsible state, and can thus realize the door opening completion state without using the slide rail.
Patent TW-524993-B (TW)
Title: Optical systems for reflective LCD's
Inventor: FULKERSON E GREGORY
IPC: G02B27/10
Filed: 2000-05-16
Granted: 2003-03-21
Abstract: Optical systems for use with reflective LCDs (8, 9, 32, 34, 36) are provided. The systems include a polarization beam splitter (5) which can be composed of polarization beam splitting cubes (26) having sheet polarizers (30) and/or half wave plates (28) at their mating surfaces. By orienting the half wave plates (28) so that they convert S polarization to P polarization and P polarization to S polarization, the polarization beam splitter (5) can provide a high contrast ratio at a viewing screen between light from the ""on"" and ""off"" pixels of the reflective LCDs (8, 9, 32, 34, 36).
Patent TW-I224134-B (TW)
Title: A combined process for improved hydrotreating of diesel fuels
Inventor: WHITEHURST DARRELL DUAYNE
IPC: C10G67/06
Filed: 2000-06-01
Granted: 2004-11-21
Abstract: Described herein is a combined process for improved hydrotreating of diesel fuels, in which the feed to be hydrotreated is pretreated with a selective adsorbent prior to the hydrotreating step to remove polar materials, especially nitrogen containing compounds (N-compounds). By removing the N-compounds in this way, it is possible to achieve extremely high conversions of refractory sulphur compounds in the diesel fuel at moderate hydroprocessing conditions. If the diesel fuel is hydrotreated without prior removal of N-compounds, excessive amounts of hydrotreating catalysts must be used and high temperatures and pressures must be employed. This is particularly true when sulphur levels of below 500 ppm are desired. The selective adsorption process can employ either liquid or solid adsorbents, and may be operated in a variety of modes, including stirred tanks, hydroclones, moving beds, fixed beds, ebulated beds or fluidized beds. In operations, where the adsorbent and diesel fuel are both moving through the reaction adsorption zone, the flows can be either cocurrent or countercurrent. After contact of the adsorbent with the diesel fuel feed, the adsorbent containing undesired polar compounds is separated from the diesel fuel and the inhibitor free fuel is processed in conventional equipment. The separated adsorbent is then subjected to a two step procedure for regeneration. First any physically adsorbed inhibitor free fuel is recovered. For example, if a solid adsorbent is employed, the solid containing physically adsorbed diesel fuel is contacted with a stripper gas such as steam to strip off the inhibitor free fuel, while leaving the polar compounds strongly adsorbed on the solid adsorbent. The polar compounds may then be removed either by an oxygenative or hydrogenative process.
Patent TW-451334-B (TW)
Title: Method for lateral etching with holes for making semiconductor devices
Inventor: SKOTNICKI THOMAS
IPC: H01L29/51
Filed: 2000-09-11
Granted: 2001-08-21
Abstract: A stack of layers is formed on a silicon substrate (12). The stack of layers includes at least one assembly of two layers, of which the lower is germanium or a combination of germanium and silicon (14, 16), with an upper layer of silicon (15, 17) (the upper and lower layers corresponds to the upper and lower surfaces of the substrate). By the conventional ion implantation, there are formed a dielectric gate layer (18), a gate (19), spacers (20, 21), and the areas (22, 23) of the source and drain, and also formed an external passivation layer (24). Then, part of the SiGe layer (14, 16) is etched to form tunnels (26, 27), thereby forming a vertical hole (35) until entering the lower layer (14) of SiGe. Then, the walls of the hole (25) and tunnels (26, 27) are internally deactivated so that the tunnels are kept empty or full.
Patent TW-505779-B (TW)
Title: Noise reducing differential pressure measurement probe
Inventor: BEACHEY TERRY X
IPC: G01L19/00
Filed: 2000-08-03
Granted: 2002-10-11
Abstract: A differential pressure measuring probe with an improved signal to noise ratio is provided. The probe includes a substantially flat longitudinally extending impact surface that is configured to create a dome of high pressure in the impacting fluid. The dome of high pressure provides an increased stagnation area on the impact surface to reduce noise in the measurement of impact pressure. A non-impact surface is provided with non-impact apertures to measure a non-impact pressure such that differential pressure between the impact surface and the non-impact surface can be calculated.
Patent TW-463352-B (TW)
Title: Leadframe and method for manufacturing resin-molded semiconductor device
Inventor: NANO MASANORI
IPC: H01L23/31
Filed: 2000-08-30
Granted: 2001-11-11
Abstract: In a leadframe for an LGA package, a lead member is pressed downward to form a land lead with a half-cut portion and a land portion. The land portion, whose bottom will be a land electrode, is inclined at a predetermined angle and the bottom of the land portion is made lower than that of a lead. Thus, in a resin molding process using a seal sheet, the land electrode is forced into, and strongly adhered to, the seal sheet when pressure is applied through dies, and no resin encapsulant reaches the land electrode. As a result, no resin bur will be left on the land electrode of the land lead.
Patent TW-I245055-B (TW)
Title: Polyoxymethylene with improved resistance to acids and its use
Inventor: ZIEGLER URSULA
IPC: C08L59/02
Filed: 2000-09-07
Granted: 2005-12-11
Abstract: Polyoxymethylene with improved resistance to acids, comprising A from 84 to 99.79% by weight of at least one polyoxymethylene homo- or copolymer, B from 0.1 to 5% by weight of at least one polyalkylene glycol, C from 0.1 to 10% by weight of zinc oxide, and D from 0.01 to 1% by weight of one or more nitrogen-containing costabilizers, where the total of the percentages by weight of components A to D is 100%. This polyoxymethylene is particularly advantageous when used for producing moldings for use in contact with aggressive acids or with aggressive acid-containing cleaning agents, in particular for applications in the sanitary sector or the white goods sector.
Patent TW-468233-B (TW)
Title: Apparatus and measurement method of hysteresis and time shift for ISFET containing amorphous silicon hydride sensing membrane
Inventor: CHOU JUNG-CHUAN
IPC: G01R31/26
Filed: 2000-09-16
Granted: 2001-12-11
Abstract: This invention provides an apparatus and a measurement method of hysteresis and time shift for ISFET containing amorphous silicon hydride sensing membrane. A voltage-time recorder is used to measure hysteresis and time shift of device, respectively. In order to obtain measured results closer to the accurate values, reverse compensation is provided to the output of ordinary experiments by using an apparatus and a model of hysteresis and time shift for ion sensitive field effect transistor (ISFET) containing silicon hydride sensor membrane with respect to the experiment results.
Patent TW-I278697-B (TW)
Title: Liquid crystal display panel avoiding display unevenness and manufacturing method
Inventor: KOUYA AKIYOSHI
IPC: G02B5/30
Filed: 2000-09-26
Granted: 2007-04-11
Abstract: A liquid crystal display panel capable of avoiding display unevenness. The liquid crystal display panel is manufactured by a method comprising: preparing a pair of polarizer films each having at least a polyvinyl alcohol layer and a triacetyl cellulose layer; preparing a liquid crystal substrate assembly which comprises a first glass substrate and a second glass substrate and a liquid crystal material disposed between said first glass substrate and said second glass substrate; heating said polarizer films at a predetermined temperature for a predetermined time in a first heat treatment process; and sticking the polarizer films on the first and second glass substrates, after the first heat treatment process. The method may further comprises, after sticking the polarizer films on the first and second glass substrates, heating the liquid crystal substrate assembly in a second heat treatment process.
Patent TW-I223657-B (TW)
Title: Amino resin composition for the cleaning of the mold
Inventor: HUANG KUEN-YUAN
IPC: C08L97/02
Filed: 2000-10-18
Granted: 2004-11-11
Abstract: This invention relates to an amino resin composition for cleaning a mold and, more specifically, a composition comprising a thermosetting general-type amino resin added with a semi-dried amino resin made of specially-designed method. The disclosed amino resin composition has decreased viscosity, enhanced tableting property of powder, excellent forming capability in cleaning dirt in the mold surface, and excellent mold cleaning effectiveness so that cleaning time is effectively shortened. Moreover, because of its excellent tableting property, the disclosed composition can solve the difficult tableting problem of the powdered composition.
Patent TW-493977-B (TW)
Title: Adjustable strap fastener for brassieres and the like and method of making same
Inventor: FILDAN GERHARD
IPC: A44B17/00
Filed: 2000-11-17
Granted: 2002-07-11
Abstract: A method of making a metal-free strap fastener for articles of clothing including brassieres, lingerie and corsetry, comprising the steps of: (a) molding onto a first elongated knit web of a thermoplastic yarn a succession of eyelets to form a female-fastener strip; (b) enfolding said female-fastener strip in a second elongated web of a thermoplastic yarn so that edge portions of said second web overlie one face of said female-fastener strip alongside said succession of eyelets and another portion of said second web covers the other face of said female-fastener strip; (c) ultrasonically joining said edge portions to said female-fastener strip and said female-fastener strip to said other portion of said second web at longitudinally spaced-apart intervals along said female-fastener strip at which said eyelets are located to form a fastener band; and (d) ultrasonically severing successive lengths from said band, each of said lengths including at least one of said eyelets whereby said lengths can be affixed to a garment for engagement of a male fastener in the respective eyelet to secure the garment.
Patent TW-548227-B (TW)
Title: Wafer transport system
Inventor: BONORA ANTHONY C
IPC: G03F7/20
Filed: 2001-02-13
Granted: 2003-08-21
Abstract: A wafer transport mechanism is disclosed capable of transferring workpiece cassettes between lot boxes and SMIF pods. The transport mechanism includes a frame having a first support platform on a first side of the frame for supporting a SMIF pod, and a second support platform on a second side of the frame for supporting a lot box. The frame further includes a carrier transfer mechanism which resides completely within the frame when in a home position. The transfer mechanism includes an arm and a gripper pivotally mourned to the arm. Once a SMIF pod and lot box are seated on their respective support platforms, the transfer mechanism transfers a cassette between the two containers.