Patent SG-11201407282X-A (SG)
Title: Semiconductor device and method for forming the same
Inventor: TAN CHUAN SENG
IPC: H01L23/28
Filed: 2013-07-23
Abstract: (12) INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property Organization International Bureau (43) International Publication Date 6 February 2014 (06.02.2014) WIPOIPCT (10) International Publication Number WO 2014/021777 A1 (51) International Patent Classification: H01L 21/3065 (2006.01) H01L 21/82 (2006.01) H01L 21/3205 (2006.01) H01L 21/98 (2006.01) H01L 21/324 (2006.01) H01L 21/56 (2006.01) H01L 21/46 (2006.01) H01L 23/28 (2006.01) (21) International Application Number: (22) International Filing Date: (25) Filing Language: (26) Publication Language: PCT/SG2013/000305 23 July 2013 (23.07.2013) English English (30) Priority Data: 61/677,890 31 July 2012 (31.07.2012) US (71) Applicant: NANYANG TECHNOLOGICAL UNIVER­ SITY [SG/SG]; 50 Nanyang Avenue, Singapore 639798 (SG). (72) Inventors: TAN, Chuan Seng; c/o NANYANG TECH­ NOLOGICAL UNIVERSITY, 50 Nanyang Avenue, Singa­ pore 639798 (SG). CHONG, Gang Yih; c/o NANYANG TECHNOLOGICAL UNIVERSITY, 50 Nanyang Avenue, Singapore 639798 (SG). (74) Agent: VIERING, JENTSCHURA & PARTNER LLP; P.O. Box 1088, Rochor Road, Singapore 911833 (SG). (81) Designated States (unless otherwise indicated, for every kind of national protection available)'. AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (84) Designated States (unless otherwise indicated, for every kind of regional protection available)'. ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG). [Continued on next page] (54) Title: SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME 524 504 M2 M2 M2 M2 M2 M2 • 522 Ml 526 550 ,516 •510 *508 (57) Abstract: In various embodiments, method a for form­ ing a semiconductor device may be provided. The method may include providing a substrate. The method may also in­ clude forming metal a layer on the substrate. In addition, the method may include forming first capping a layer on the met­ al layer. The method may also include attaching the first cap - ping layer to a second capping layer. The metal layer may comprise copper and capping a layer may comprise metal a nitride that has been activated in a plasma. The second cap - ping layer may be disposed on a second substrate. l> l> l> CJ o 500d o CJ o & WO 2014/021777 A11 lllll llllllll II llllll III III lllll llll III III lllll lllll lllll lllll lllll llll lllllll llll llll llll Published: — with international search report (Art. 21(3))