baber/WOPTO huggingface dataset:
Patent JP-H10229158-A (JP)
Title: Semiconductor device for high frequency
Inventor: ISHIKAWA OSAMU
IPC: H01L23/12
Filed: 1997-09-05
Abstract: PROBLEM TO BE SOLVED: To prevent situation such that a supporting metal board is detached from a resin mold, and also to securely joint the supporting metal board and the ground pattern of a printed board. SOLUTION: A semiconductor chip for high-frequency power is molded by a supporting metal board 10, outer leads 11, and a resin package 12 having a rectangular parallelopiped form. Bending parts 10d which inhibit the detachment of the supporting metal board 10 from the resin package 12 are provided for the right/left side parts of the supporting metal board 10. Soldering parts 10a, which are soldered with a ground pattern of a printed board, are provided for the surface of the supporting metal board 10 that is exposed by notching the side edge parts of the resin package 12 in the front and the back. Then, exposure parts 10b which are exposed continuously from the resin package 12 for the sides in the front and back at the backside are provided for the back of the supporting metal board 10. The exposure parts 10b and the soldering parts 10a are exposed continuously from the resin package 12, through sides 10c in the front and back.
Patent JP-2001063294-A (JP)
Title: Method for transfer of leaf
Inventor: OTANI HIROSHI
IPC: B44C3/02
Filed: 1999-08-27
Abstract: PROBLEM TO BE SOLVED: To obtain a method for thermal transfer of a thermal transfer sheet onto a card. SOLUTION: In a process wherein a thermal transfer sheet 10 having a transfer leaf 13 stuck on a substrate 11 by a prescribed or larger sticking force is transferred thermally onto a card 20, the thermal transfer sheet having the leaf cut beforehand in the same dimension as the card or in a smaller dimension than this is used and transfer and peeling are conducted, or after the transfer leaf is transferred onto the card, it is cut along the periphery of the card and then the substrate is peeled off therefrom.
Patent JP-H1187624-A (JP)
Title: Protective circuit for semiconductor integrated circuit
Inventor: TAKAHASHI KENICHIRO
IPC: H01L21/8238
Filed: 1997-09-05
Abstract: PROBLEM TO BE SOLVED: To reduce the space factor by increasing such current as to be flowed until breakdown, as compared to a conventional protective circuit wherein an external abnormal voltage to both higher-order and lower-order power source lines is discharged by a breakdown current of a pMOS transistor and an nMOS transistor under off-state. SOLUTION: A pMOS transistor QP2 connects a source electrode to a higher- order power source line 2 and a drain electrode to a lower-order power source line 3 via a resistance element R1 , while an nMOS transistor QN2 connects the source electrode to the lower-order power source line 3 and the drain electrode to the higher-order power source line 2 via a resistance element R2 . A gate electrode of the pMOS transistor PP2 is connected to the drain electrode of the nMOS transistor QN2 , while the gate electrode of the nMOS transistor QN2 is connected to the drain electrode of the pMOS transistor PP2 . When one transistor is broken down by an external abnormal voltage, a voltage generated on both the ends of a resistor by a breakdown current turns the other transistor on. Thereafter, a positive feedback is generated with both on-current, for increased current.
Patent JP-H0289949-A (JP)
Title: Air-flow direction deviating device for air conditioner
Inventor: KONDO RYUTA
IPC: F24F13/14
Filed: 1988-09-27
Abstract: PURPOSE:To prevent a decrease in an air quantity and an increase in a noise by providing a louver adapting a shape memory alloy, allowing the louver to be in agreement with an outlet direction while keeping the louver in a plate state at a cooling operation, and curving the louver to turn the outlet direction downward at a heating operation. CONSTITUTION:In the case of a cooling operation, a plate-like louver 7 is turned from the state of closing an outlet port 3 toward a horizontal direction by driving a motor. A shape memory alloy 8 is cooled to retain the louver 7 in a flat state and, since the direction of the louver 7 is in agreement with an outlet direction, cold air is blown toward a horizontal direction without any resistance. On the other hand, in the case of a heating operation, the louver is in the same flat state as in the case of the cooling operation because a heat exchanger 5 is not heated at the starting of the heating operation. However, when a temperature rises and the shape memory alloy reaches the temperature of its deformation point, the shape memory alloy curves, whereby the louver 7 which has been in the flat state curves upward in a protruding state. When the motor is driven to turn an air flow direction downward, the outlet direction is also turned downward. Since the direction of an air current changes gently, a decrease in an air quantity and an increase in a noise are not caused.
Patent JP-H03104183-A (JP)
Title: Semiconductor laser and manufacture thereof
Inventor: MURAKAMI TAKASHI
IPC: H01L21/205
Filed: 1989-09-18
Abstract: PURPOSE:To set the band-gap energy on the side of GaAs lower than that on the side of AlGaLnP and hence lower operating voltage by providing a P-GaInP buffer layer between a P-GaAs contact layer and a P-AlGaInP cladding layer. CONSTITUTION:There are provided on an n-GaAs substrate 1 an n-Al0.25Ga0.25 In0.5P cladding 2, a non-doped Ga0.5In0.5P active layer 3, a p-Al0.25Ga0.25P cladding 4, an n-GaAs current blocking layer 5, a p-Ga0.5In0.5P buffer 6, a low temperature grown p-Ga0.5In0.4P buffer 7, a p-GaAs contact 8, a bridge 9, and n, p side electrodes 10, 11. With the growth temperature of the layers 1-6 being 650 deg.C and with a V/III group ratio being 400, the low temperature grown buffer 7 is grown with its temperature being changed gradually a range of 650 deg.C-600 deg.C. For film thickness, the layer 6 is of 0.05mum and the low temperature grown buffer 7 is of about 0.05 mum. With such configuration, bands of the layers 4, 6, 7, and 8 are gradually changed and hereby potential barriers on the side of valence electron bands are moderated. Thus, low voltage operation is assured. Provided growth temperature on the side in contact with GaAs is set lower than that on the side of an AlGaInP side, a low resistance ratio is achieved.
Patent JP-H0665581-A (JP)
Title: Method for adjusting coal slurry in coal liquefaction process
Inventor: MOCHIZUKI MICHIHARU
IPC: C10G1/00
Filed: 1992-08-19
Abstract: PURPOSE:To prevent the occurrence of feed troubles due to increase in slurry viscosity in preparing a coal slurry in the coal liquefaction process by controlling the temp. of the slurry in preparation, time of recirculation for stirring and mixing, and shear rate corresponding to the type of coal. CONSTITUTION:A coal slurry is prepd. by mixing and stirring coal, a coal liquefaction solvent, and a coal liquefaction catalyst by recirculating them through a slurry recirculation line 23. The final viscosity of the slurry is adjusted by specifying the temp. of the slurry in preparation to be in the range of 50-150 deg.C, recirculating the slurry at the specified temp., and simultaneously adjusting the time of recirculation. Furthermore, the relation between the shear rate and shear stress of slurry, which is determined by the flow rate of slurry and the radius of piping, is kept in the range of Newtonian flow by controlling the flow rate of slurry in the recirculation line 23 with slurry recirculation pumps 21 and 22 and by controlling the speed of stirring in a slurry preparation vessel 19.
Patent JP-2001068661-A (JP)
Title: Semiconductor element having quantum wave interference layer
Inventor: KANO HIROYUKI
IPC: H01L31/04
Filed: 1999-08-27
Abstract: PROBLEM TO BE SOLVED: To obtain a semiconductor element having body of a first quantum wave interference layer to function as a carrier reflective layer and a second quantum wave interference layer to function as a carrier transmitting layer, by a method wherein the thickness of the first and second layers of the first quantum wave interference layer and the thicknesses of the third and fourth layers of the second quantum wave interference layer are specified. SOLUTION: This semiconductor element consists of a first quantum wave interference layer formed by laminating a first layer W and a second layer B of a band width wider than that of the first layer W at a multiple period, and a second quantum wave interference layer formed by laminating a third layer W and a fourth layer B of a band width wider than that of the third layer W at a multiple period. The thicknesses of the layers W and B of the first quantum wave interference layer are set by or odd multiple of 1/4 of the wavelength of carrier quantum waves to transmit each layer of the layers W and B. Consequently, the first quantum wave interference layer is formed into a carrier reflective layer having a high reflectivity.  Moreover, the thickness of the layers W and B of the second quantum wave interference layer are set by an even multiple of 1/4 of the wavelength of carrier quantum waves to transmit each layer of the layers W and B. As a result, the second quantum wave interference layer is formed into a carrier transmitting layer having a high transmissivity and a high mobility.
Patent JP-S60132472-A (JP)
Title: Photographing device
Inventor: KISHI MASAHITO
IPC: G03B31/00
Filed: 1983-12-21
Abstract: PURPOSE:To obtain a handy camera by attaining such a constitution where a mike can be stored into the main body of a photographing device for protection of the mike in a phogoraphing mode, and also to decrease as less as possible the number of projected areas. CONSTITUTION:When a video camera 1 is used for shooting, a cover 9 is opened to open the front side of a photographing lens 7. At the same time, a mike 18 is exposed to the front side of the main body 2 of a photographing device (camera 1). Thus the photographing and sound recording are possible. While the cover 9 is closed when the camera 1 is not used for shooting. Thus the front side of the lens 7 is closed and at the same time the mike 18 is stored into the main body 2. In such a way, both the lens 7 and the mike 18 can be protected.
Patent JP-H11135733-A (JP)
Title: Manufacture of thin-film resistor
Inventor: ISHIKAWA EIJI
IPC: H01L21/302
Filed: 1998-08-27
Abstract: PROBLEM TO BE SOLVED: To realize high selectivity of a barrier metal layer and a thin-film resistor layer and high precision for the etching treating process of a thin-film resistor. SOLUTION: A tin-film resistor 12 is formed on an inter-layer insulated film 13 provided on a substrate 11. For the resistor 12, a CrSiN film 14 and a TiW film 15 are laminate-formed, a mask pattern 28 are formed by photoresist, and two steps of consecutive dry etching treatment is executed. The film 15 is supplied with an etching gas on a condition of enriching fluorine radical and is selectively etched, and the CrSiN film is supplied with an etching gas on a condition of enriching oxygen radical and is selectively etched. Thereby, a hem drawing phenomenon in the neighborhood of a mask due to etching is suppressed for precise etch-treatment of the mask pattern.
Patent JP-2000064267-A (JP)
Title: Injecting device for cement milk
Inventor: SHINDO AKIHISA
IPC: E02D3/12
Filed: 1998-08-27
Abstract: PROBLEM TO BE SOLVED: To inject cement particles into the ground which is difficult to pass cement particles without reaggregating cement particles by manufacturing cement milk, imparting vibration by an ultrasonic wave generating device having a prescribed frequency and an output, and injecting cement milk. SOLUTION: Within a mixer tank 11 of a grout mixer 1 provided with an agitating blade 12, an ultrasonic wave generating device 2 of tens kHz in frequency and hundreds W in output number is provided, cement and water are agitated/mixed and cement milk is manufactured, radiating ultrasonic waves. Within the mixer tank 11, a level sensor 3 is arranged, the ultrasonic wave generating device 2 is exposed from cement milk and is prevented from being damaged due to heating. Aggregated cement particles are dispersed by ultrasonic wave vibration and are injected by a grout pump without being reaggregated from a nozzle at a tip up to a path during the injection. Therefore, cement particles can be injected with high density into even a rock bed such as soft rock which passes water but is difficult to pass cement particles and even a portion in which only thin cement milk can be injected.
Patent JP-H04120724-A (JP)
Title: Uprigth heat treatment device
Inventor: ASANO TAKAYASU
IPC: H01L21/205
Filed: 1990-09-12
Abstract: PURPOSE:To provide an upright heat treatment device capable of keeping on standing even in case of an earthquake by providing a mechanism attached to an upper portion of an upright boat to prevent the wafer-loaded boat on standby from rocking. CONSTITUTION:A boat stage 42 includes a base 44 that is engaged with the bottom of a boat 4 to support it upright. The base 44 is capable of translation on a rail 46 by a motor and a ball screw. A plate 100 with a U-groove 102 is provided above one end of the rail. When the base 44 with the boat 4 on it is moved to the end of the rail, the U-groove 102 receives a projection 104 that is provided on the top of the boat. Therefore, the boat is prevented from falling oven even if there are shocks, for example, due to an earthquake.
Patent JP-S62101493-A (JP)
Title: Thermal transfer medium
Inventor: HAKIRI MINORU
IPC: B41M5/124
Filed: 1985-10-29
Abstract: PURPOSE:To obtain transferred images with high density and excellent water resistance, by incorporating a phenolic resin as a color development assistant in a receiving layer. CONSTITUTION:A phenolic resin is incorporated as a color development assistant in a receiving layer, whereby a developed color image with a high density can be obtained, and the transferred image thus obtained has an extremely low water solubility and excellent water resistance. The phenolic resin is capable of developing the color of a leuco dye, and can be obtained by condensing a phenol with an aldehyde in the presence of an acid or an alkali. The amount of the phenolic resin used is ordinarily 0.01-1.0pts.wt. per 1pts.wt. of a color developer. If the amount is more than 1.0pts.wt., thermal sensitivity is lowered, whereas if the amount is less than 0.01pts.wt., water resistance is lowered. A transfer sheet comprises a transfer layer comprising a leuco dye as a main constituent on a base such as a paper, a synthetic paper and a plastic film.
Patent JP-H0991132-A (JP)
Title: Error information report system
Inventor: HASEBE TAKAYUKI
IPC: G06F21/14
Filed: 1995-09-20
Abstract: PROBLEM TO BE SOLVED: To suppress the appearance of unauthorized users by monitoring the frequency of decoding processing error in a user terminal and giving the information of the frequency thereof to a center. SOLUTION: A contents decoding key generating part 14 generates a decoding key while using a purchase number inputted by a user. A contents decoding part 15 decodes contents while using the decoding key generated by the contents decoding key generating part 14. An error monitoring part collates a check code, which is decoded together with the contents, with specified code information 5b stored in a ROM 5 and discriminates whether both the codes are matched or not. When both the codes are not matched, the error monitoring part discriminates that decoding processing is not normally finished, namely, that the user does not input the proper purchase number, and the number of times of error generation in a log file 6a is incremented for one. Then, an error information reporting part gives the information of the frequency of the error registered in the log file 6a to the center.
Patent JP-H0773771-A (JP)
Title: Information setting device
Inventor: OSAWA TOSHIFUMI
IPC: H01H1/36
Filed: 1993-09-03
Abstract: PURPOSE:To simplify the structure of a circuit, and to reduce the power consumption by counting the change of the output of specified signal holding circuits with counting means to obtain the quantity of operation of an operating member at the time of turning on/off a switch in couple with the operation of the operating member. CONSTITUTION:A switch member for connecting a first terminal A to a first contact H, which is connected to a high potential side, and a second contact L, which is connected to a low potential side, alternately in couple with the operation of an operating member and for connecting a second terminal B to the first contact H and the second contact L alternately in the phase relation different form the first terminal A is provided. Furthermore, first signal holding circuits g3, g4 connected to the first terminal A, second signal holding circuits g5, g6 connected to the second terminal B, a resistor Ra for performing the feedback of the output of the first signal holding circuits to the first terminal A and a resistor Rb for performing the feedback of the output of the second signal holding circuits to the second terminal B are provided. Change of the output of the first and the second signal circuits are counted by counting means 1, 2 to obtain the quantity of operation of the operating member.
Patent JP-2000077157-A (JP)
Title: Chain terminal
Inventor: MATSUOKA HIROYUKI
IPC: H01R43/055
Filed: 1998-08-27
Abstract: PROBLEM TO BE SOLVED: To reliably regulate a floating of a carrier in a return direction, and to reliably position the carrier so as to stay along a guide. SOLUTION: A linear slip stopping part 15 extending slantwise toward a guide surface 23 (a guiding means) side from a terminal bracket element piece 12 side is formed on a surface sandwiched and pressurized by a braking means 32 of a carrier 11 by turning it toward the destination of a moving direction of the carrier 11. Even if a force in a return direction is applied to the carrier 11 when a feed arm 30 (a feeding means) is double-acting, a big frictional resistance is produced by catch occurring between the braking means and the linear slip stopping part 15, in order to reliably prevent the carrier 11 from being returned. When the carrier 11 is moving, the catching part resistance between the braking means and the linear slip stopping part 15 works as a force to push the carrier 11 toward the guide surface 23 side by the slant of the linear slip stopping part 15.
Patent JP-H1086031-A (JP)
Title: Automatic chip remover in machining center
Inventor: NAKANISHI YOSHIHARU
IPC: B23Q11/00
Filed: 1996-09-12
Abstract: PROBLEM TO BE SOLVED: To automate chip removing work in a machining center. SOLUTION: To remove chips from a work, a chip removing tool 5 is attached to a spindle 2 using an automatic tool changer, the work is positioned vertically below the spindle 2 by carrying out movements along X- and Y-axes, the spindle is lowered along the Z-axis to make the chip removing tool 5 approach the work, and the chips are attracted to the lower outside surface of the case 8, On the other hand, to remove chips from the chip removing tool 5, the spindle is moved along the X-, Y-, and Z-axes to place a horizontal bar of a round bar 4 attached to a machining center below the handle 6 of the chip removing tool 5, the spindle is lowered along the Z-axis so that the horizontal bar raises the handle 6, add the chips fall off the lower outside surface of the case 8.  Therefore, chip removal work and chip disposal work are carried out automatically by simply inputting in advance operations of the machining center.
Patent JP-H0293442-A (JP)
Title: Stroboscopic device
Inventor: MURAMATSU AKIRA
IPC: H05B41/32
Filed: 1988-09-29
Abstract: PURPOSE:To raise an impedance between a battery and a stroboscopic charging circuit, to prolong the life of the battery and to maintain the outputting ability by controlling a charging current so that it is reduced as the residual capacity of a battery decreases. CONSTITUTION:A P channel MOSFET (variable impedance element) 7 exists between the output terminal A of the battery 5 and the input terminal B of the stroboscopic charging circuit 6. The connecting contact C between an analog switch 13 and a capacity element 14 is connected to the gate contact of the variable impedance element 7, which functions as a current control circuit. The impedance of the element 7 changes in proportion to a difference voltage DELTAV held and connected to a capacity element 14. The larger the DELTAV becomes, that is, the smaller the residual capacity of the battery 5 becomes, the higher the impedance becomes, and the charging current decreases. The excessive load of the battery 5 can be prevented, and the load is reduced for the battery whose residual capacity is decreased. As a result, the life of the battery is prolonged, and the outputting ability is maintained.
Patent JP-H03108499-A (JP)
Title: Culture medium for identifying fungus putting culture medium for many kind of fungi in interior of wall face of vessel having transparent and flat wall face
Inventor: FUJITA SHIGERU
IPC: C12N1/14
Filed: 1989-09-19
Abstract: PURPOSE:To obtain the title culture medium for hair boring test capable of identifying a fungus such as filamentous fungus in saved time and labor by arranging plural agar culture media for culturing fungi formed into flat plate shape in Petri dish and cut into definite size in the interior of a vessel having transparent and flat wall face. CONSTITUTION:A culture medium in which two or more kind of agar culture media 2 (e.g. SABURO agar medium, oatmeal agar medium, 1 % glucose-added oatmeal agar medium, urea agar medium, human hair-containing 0.05% yeast extract agar medium or brain heart infusion agar medium) for fungi culture obtained by forming into flat sheet in Petri dish and cutting into definite size such as the squares are arranged in the interior of a vessel 1 having transparent and flat wall face is used and fungi are inoculated into the media 2 and cultured and grown fungi are further bonded to transparent and flat wall face and grown to readily identify fungi.
Patent JP-H03104444-A (JP)
Title: Retrial processing method at occurrence of transmission line error in data communication network
Inventor: SAKAMOTO EMIKO
IPC: H04Q9/14
Filed: 1989-09-19
Abstract: PURPOSE:To prevent abort of a communication data caused by retrial processing and delay of communication time or the like from taking place by applying data communication between other subsequent equipment and a host device succeedingly in the occurrence of a transmission line error, including a subsequent equipment having had a transmission line error to a succeeding subsequent equipment group after the end of communication and repeating the data communication. CONSTITUTION:Access is stopped immediately with one timeout to a subsequent equipment M having a transmission line error and receiving no connection setting reply and the succeeding subsequent equipment is accessed immediately. Access is implemented at a rate of once per one circulation to the subsequent equipment M and so long as the transmission line error is not restored, the access continues permanently. When a connection setting reply comes from the subsequent equipment M, the transmission of the data not sent is performed from the start sequentially.