baber/WOPTO huggingface dataset:
Patent JP-H0623056-A (JP)
Title: Guide wire for catheter and catheter
Inventor: YUZUTORI TAKAAKI
IPC: A61M25/01
Filed: 1991-07-18
Abstract: PURPOSE:To achieve higher anticorrosion for a body liquor, medicine and the like by reducing an outer diameter achieving higher strength. CONSTITUTION:In the forming of a guide wire 10 for a catheter is built, low carbon double-phase structure steel wires 13 each with a wire diameter of below 30mum and a tensile strength exceeding 300Kgf/mm<2> are wound on the external surface of a core material 11 comprising stainless steel being inclined to a shaft core of the core material 11 while crossing each other. Then, a cover of a polyester resin film 15 with a thickness of 3mum or less is formed on the external surface of the low carbon double-phase structure steel wires 13. In the forming of a catheter, the low carbon double-phase structure steel wires 13 in which a cover of the polyester resin film 15 is formed on the outer circumferential surface of a resin internal film are wound being inclined to the shaft core while crossing each other.
Patent JP-S6093359-A (JP)
Title: Level discriminating circuit
Inventor: ISHIZUKI NORIYOSHI
IPC: G01R19/165
Filed: 1983-10-27
Abstract: PURPOSE:To discriminate the levels of many analog voltages with simple constitution by comparing outputs of plural analog switches with a successively changing reference voltage. CONSTITUTION:A multiplexer 5 supplies a selecting signal to an analog switch 3 or 4 in accordance with the control signal of a terminal 6. Then, an LCD driver output signal of a terminal 1 or 2 is transmitted to a voltage comparator 13. Meanwhile, a digital signal as the reference voltage of a terminal 9 is given to the comparator 13 through a D/A converter 10. Consequently, the level of the LCD driver output signal having a multilevel bias level is discriminated by the comparator 13. The digital signal of the terminal 9 is set optionally.
Patent JP-H0529323-A (JP)
Title: Semiconductor substrate and manufacture thereof
Inventor: NEZU SHIGECHIKA
IPC: H01L21/304
Filed: 1991-07-19
Abstract: PURPOSE:To prevent the mechanical damage of the title substrate by a method wherein a protective film is formed on the back of a wafer and a strain layer is then introduced into the rear back of the wafer by a sand blasting method. CONSTITUTION:In the manufacturing method, of a semiconductor substrate, wherein an annealing treatment is executed to an Si single-crystal wafer and a strain layer is then introduced into the back of the wafer by a sand blasting method, the annealing treatment is executed in an oxidizing atmosphere and a silicon oxide film as an inorganic protective film is formed on the rear of the wafer. Thereby, it is possible to manufacture a semiconductor substrate whose mechanical damage on the rear of the wafer is small and into which the rear strain layer having a durable EG effect has been introduced.
Patent JP-H02161882-A (JP)
Title: Sensitivity adjustor for image pickup element
Inventor: TANAKA YOSHITO
IPC: H04N5/372
Filed: 1989-08-03
Abstract: PURPOSE:To easily and exactly adjust the variance of sensitivity of an image pickup element at the time of assembling an electronic shutter by providing a control means in which a correction value corresponding to a switch input of a switch input terminal for setting the correction quantum corresponding to the variance of image pickup sensitivity of the image pickup element is stored. CONSTITUTION:At the time of assembling, the variance quantum of sensitivity of an image pickup element 9 is checked, and based on the result of this check, switch input terminals 53, 54 of a control means 10 are set to a prescribed state. Accordingly, a correction value corresponding to a set state of the input terminals 53, 54 is outputted from the control means 10, and by this output, photometric data by a photometric sensor 6 for controlling an exposure is corrected, and a shutter speed, namely, an exposure time is adjusted. In such a way, at the time of assembling the image pickup element 9, by only setting a state of the switch input terminals 53, 54 of the control means 10 in accordance with the variance of element sensitivity, the variance of each sensitivity of the image pickup element 9 can be corrected easily and exactly.
Patent JP-S6264822-A (JP)
Title: Process and apparatus for producing polyester
Inventor: YAMAUCHI SHINICHI
IPC: C08G63/00
Filed: 1985-09-17
Abstract: PURPOSE:To obtain a polyester of excellent quality inexpensively in good efficiency, by forming a thin film of a polyester-forming monomer fed from the upper wall of the tank on the wall by effecting a planetary motion of an impeller in a specified direction and at the same time allowing the thin film to flow down along the wall. CONSTITUTION:When a drive shaft 15 is rotated, upper and lower discs 21 and 22 are rotated, a planetary gear 31 coming into mesh with a main gear 20 goes around it and at the same time it is rotated in the same direction. Therefore, a columnar or cylindrical roller impeller 32 kept in the vicinity of the inside wall of the tank performs a planetary motion in which the direction of rotation and that of revolution coincide with each other along the inside wall. A feed solution comprising a polyester-forming monomer and/or its oligomer is sparged in the peripheral direction by means of the lower disc 22 which is rotating and is spread on the inside wall of the tank. During its revolution, the feed solution is sheared by the impeller 32 to refresh its surface and it is allowed to flow down along the inside wall. Therefore, the reaction can be performed very quickly.
Patent JP-S6098285-A (JP)
Inventor: HAYASHI TAKASHI
IPC: F16L11/10
Filed: 1983-10-31
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。
Patent JP-H0486825-A (JP)
Title: Plate making device for printing
Inventor: IWATA SADANARI
IPC: G03F3/08
Filed: 1990-07-31
Abstract: PURPOSE:To electronically and easily form a plate for printing by subjecting photograph originals which are read and stored to stripping in accordance with a design layout sheet, then to regular printing after trial printing. CONSTITUTION:The photograph originals designated by numbers, etc., are first color separated and read by using a color scanner and are stored in a magnetical memory device, etc., in a 1st stage. The design layout sheet designed with the positions of the photograph originals is then read in by using the scanner and is stored in the magnetic memory device, etc., in a 2nd stage. A computer recognizes this design layout sheet and automatically recognizes the particularly written events in a 3rd stage. The photograph originals stored in the magnetic memory device are read out as a result of the automatic recognition and are disposed in accordance with the recognition result in a 4th stage. The stripping output is then emitted.
Patent JP-S6181342-A (JP)
Title: Paper sheets transport mechanism
Inventor: NONAKA HISAMITSU
IPC: B65H5/06
Filed: 1984-09-28
Abstract: PURPOSE:To enable sure transport and cure of bending liability of paper sheets to be achieved even in a complicated transport passage by continuously turning, during transport paper sheets, a transport roller provided with grooves formed in the direction perpendicular to the direction of transport along the periphery thereof. CONSTITUTION:Grooves 6a are formed along the periphery of a transport roller 6 in the direction perpendicular to the direction of transport, and the transport roller 6 turns faster than feed rollers 3a, 3b independently whether said feed rollers 3a, 3b are turning or not. Therefore, paper sheets 10 fed out by rotation of feed rollers 3a, 3b can never be deflected between feed rollers 3a/3b and the transport roller 6. In addition, bent tip parts of paper sheets having bending liability are allowed to enter the groove 6a of the transport roller 6 and cured there because the rotation of the transport roller 6 is faster than those of feed rollers 3a, 3b furthermore any crease generated on paper sheets can be covered due to discontinuous configuration of the periphery of transport roller 6 instead of continuous configuration, thus the effect of transport being secured.
Patent JP-S58106869-A (JP)
Title: Polycrystalline silicon thin-filn transistor
Inventor: KUMADA SEIJI
IPC: H01L27/12
Filed: 1981-12-18
Abstract: PURPOSE:To form a P-N junction at a low temperature, and to manufacture the thin-film transistor having large OFF registance at a low temperature by using cheap glass, etc., a heat-resistant temperature thereof is low, as a substrate by employing N type polycrystalline silicon as a semiconductor film and using Al as source and drain electrodes. CONSTITUTION:An type polycrystalline silicon film is used as the semiconductor film 2. In this case, the N type polycrystalline silicon film may be added when evaporating a polycrystalline silicon film, or an element changing silicon into N type may be attached previously onto the substrate 1 prior to evaporation. An Al is employed as the source and drain electrodes 4, 5. In this case, Al is doped onto the forming surfaces of the source and drain electrodes 4, 5 on the N type polycrystalline silicon film 2 and converted into P type, and the P-N junctions are formed. Such a polycrystalline is silicon transistor is completed, and heated for approximately 30min at approximately 380 deg.C in an N2+10% H2 atmosphere.
Patent JP-S6096863-A (JP)
Title: Storage tank for solar heat water heater
Inventor: HIRAISHI KAZUO
IPC: F24J2/46
Filed: 1983-10-31
Abstract: PURPOSE:To smoothly close a main valve, and to prevent the valve from catching dust, by closing the main valve by the water flow coming into a pressure chamber passing through a small path, after a pilot valve is closed. CONSTITUTION:A ball cock tap to feed water into a hot water storage tank is constituted in such a manner that a main valve (a) is provided in the middle of a main flow path 4 which connects an inlet passage 2 with an outlet passage 3 in a ball cock tap body 1, and a pressure chamber 6 is provided on the back of the main valve body 5 of a main valve (a). The pressure chamber 6 is connected with the outer side of a tap body 1 via a pilot flow path 8 provided with a pilot valve (b), as well as to be connected with the primary side of a main flow path 4 via a small path 7. The main valve (a) is composed of a main valve seat 9 provided in the mid-part of a main flow path 4 and a main valve body 5 made of pressure material, provided coupling with the main valve seat 9. On the other hand, the pilot valve (b) is composed of a pilot valve seat 10 provided in the pilot flow path 8 and a pilot valve body 12 which is connected with a float floating on the water surface in a main body A, and opens and closes the valve seat 10 in response to the elevating movement of a float accompanied with the increase and the decrease of the water surface.
Patent JP-H0932844-A (JP)
Title: Bearing device
Inventor: SATO FUJIO
IPC: F16C11/04
Filed: 1995-07-18
Abstract: PROBLEM TO BE SOLVED: To compensate smooth turning movement of the counterpart member of a boss member for a long period by arranging a seal member on a sliding part of the boss member and the counterpart member with a simple installing structure. SOLUTION: Each outer side bush 15 is formed of sintered alloy in which lubricating oil having low viscosity is impregnated, each bush 15 is slidably arranged in each inner side bush 16, the flange part 16C of each inner side bush 16 abuts on the outer side end surface 15B of the outer bush 15. Each inner side bush 16 is integratedly connected to each other by a seal pipe 22, a connecting pin 25 is pushed in each inner side bush 16, and lubricating oil F having low viscosity if filled in a lubricating oil housing part 24 formed between a boss pipe 13 and outer side bush 15 and the seal pipe 22. A floating seal 18 is arranged in a seal housing space P between the bush engaging hole 12A of each boss part 12 and the flange part 16C.
Patent JP-S6185073-A (JP)
Title: Power converter
Inventor: YAMANAKA YOSHIFUMI
IPC: H02M7/5387
Filed: 1984-10-01
Abstract: PURPOSE:To reduce the capacity of a power converter by feeding back energy generated by an inductance when a semiconductor switch is turned OFF to a smoothing capacitor for a DC power source, thereby suppressing the voltage rise of a clamping capacitor. CONSTITUTION:A bridge type inverter applies a DC power obtained from 3-phase full-wave rectifiers 1 and a smoothing capacitor 3 to an inverter 4 of semiconductor switches 5-8 to convert the DC into a high frequency AC to again rectify from the secondary side of an output transformer 11, and supplies it to a load. In this case, a voltage clamping circuit made of series circuits of capacitors 15, 17, and a capacitor 16, a diode 18 are provided in parallel with semiconductor switch groups 5-8, and the connecting points (a), (b) of the cathodes of diodes 17, 18 and the capacitors 15, 16 are connected through feedback diodes 19, 20 with the high voltage side of the capacitor 3. Thus, it is fed back through diodes 19, 20 with the capacitor 3, and the switches 5-8 can be protected.
Patent JP-H03148293-A (JP)
Title: Method of bridging collagen type substance and its product
Inventor: GERARUDO ERU MEKANITSUKU
IPC: C08H1/06
Filed: 1990-08-02
Abstract: PURPOSE: To provide the subject compound with good mechanical properties such as supple or pliant properties useful in surgical operation by irradiating a proteinaceous material with a light in the presence of a photooxidative catalyst, so that the proteinaceous material is cross-linked and stabilised.  
     CONSTITUTION: (A) A sample of a proteinaceous material to be cross-linked is incubated in (C) an aqueous medium buffered to pH of about 6.8-8.6, preferably 7.4-8.0 containing (B) a photooxidative catalyst capable of donating electrons to the component A when excited by incident light for a sufficient time. The component (A) is irradiated with light in the presence of oxygen for a period of time sufficient to cross-link the component (A) by transfer of electrons from the component (B) to the component (C) while maintaining the pH of the component (C) and holding the temperature at about -2-40°C to maintain the oxygen concentration in the component (C). 
     COPYRIGHT: (C)1991,JPO
Patent JP-S5994475-A (JP)
Title: Photoelectric conversion semiconductor device
Inventor: YAMAZAKI SHIYUNPEI
IPC: H01L31/056
Filed: 1982-11-20
Abstract: PURPOSE:To prevent the reliability of a semiconductor device from decreasing due to the reaction of metal with semiconductor device by forming a back surface electrode in a 2-layer structure of a light transmittance conductive film and a reflecting metal layer, thereby improving the conversion efficiency. CONSTITUTION:The first light transmittance conductive film CTF2 is formed on a glass substrate 1. Then, a photovoltaic power generating non-single crystal semiconductor 3 which has a PIN or P-N junction is formed on the CTF2. Then, the second light transmittance conductive film 5 having a thickness of 700- 2,000Angstrom  and the second electrode formed of a reflecting metal layer 6 on the film 5 are formed on an N type semiconductor of the semiconductor 3. When thus constructed, short wavelength of 500nm or shorter is sufficiently absorbed by the light passing in forth, and long wavelength of 600nm or longer can generate photocarrier at the active semiconductor layer by the light of return after reflecting. The film 5 operates to prevent the reaction of aluminum forming the layer 6 with Si, thereby preventing the lowering in its reliability.
Patent JP-H1060422-A (JP)
Title: Snow-like material
Inventor: OHASHI TOSHIFUMI
IPC: C08L101/16
Filed: 1996-07-16
Abstract: PROBLEM TO BE SOLVED: To obtain a snow-like material exhibiting the scene or behavior similar to natural snow, harmless to human body and easily recoverable after photographing or image-recording by extrusion-foaming a material composed mainly of starch having high amylose content with an extruder and crushing the formed product. SOLUTION: A material composed mainly of starch having high amylose content and containing 14-20wt.% of water is heated, kneaded and compressed in an extruder and continuously extruded through a die in a form of a hollow tube or a solid rod to effect the expansion molding of the material. The obtained product having low density and containing closed cells in crushed to obtain the objective snow-like material. The raw material preferably contains >=90wt.% of starch having an amylose content of >=45wt.%.  The objective snow-like material can be produced e.g. by extruding the raw material through a die having a ring-shaped nozzle to obtain a foamed material having a bulk- density of 0.0159g/cm<3> , cutting the extrudate near the nozzle to an outer diameter of 15mm and a cut length of 40mm, crushing to a diameter of 5-7mm for powdery snow for making a motion picture and further sieving the crushed product to remove dust, etc.
Patent JP-2001035920-A (JP)
Title: Fabrication of semiconductor device
Inventor: TERAUCHI TAKASHI
IPC: H01L21/3065
Filed: 1999-07-19
Abstract: PROBLEM TO BE SOLVED: To eliminate short circuit between contact holes by performing dry etching with a large selection rate with respect to a nitride film on an interconnection layer using a silicon film pattern as a mask and making a contact hole in an oxide film on the nitride film in self-aligned manner. SOLUTION: A contact hole 6a is made by dry etching, e.g. RIE, in an interlayer insulation film, i.e., an oxide film 6, using a patterned silicon film 8 as a mask. The oxide film 6 on an interconnection layer is etched with high selection rate with respect to nitride films 4, 5 using the nitride films 4, 5 as a stopper. The exposed nitride films 4, 5 are protected by depositing a nonreaction film and then a contact hole 6a is opened in self-aligned manner. Since the contact holes 6a can be formed as designed, they can be prevented from being connected at the upper part.
Patent JP-H0252421-A (JP)
Title: Chemical vapor deposition apparatus
Inventor: OBATA MASANORI
IPC: H01L21/31
Filed: 1988-08-17
Abstract: PURPOSE:To enhance a treatment capacity by a method wherein a reaction-product removal apparatus is installed at the outside of a reaction chamber and an inner-wall sheet is installed so as to be circulated between an inner wall face of the reaction chamber and the reaction-product removal apparatus in order to deposit a thin film and to remove a reaction product at the same time. CONSTITUTION:When a thin film is deposited, reaction products 13 adhere to inner wall sheets 16. When the thin film has been deposited, a next semiconductor substrate is housed inside a reaction chamber 12. While the semiconductor substrate is being replaced, a half turn of the individual inner wall sheets 16 is made; regions of the inner wall sheets 16 to which the reaction products have adhered are shifted individually into reaction-product removal apparatuses 15; in addition, regions of the inner wall sheets 16 which have been situated inside the reaction-product removal apparatuses 15 are shifted individually into the reaction chamber 12. While the thin film is being deposited inside the reaction chamber 12, the reaction products 13 which have adhered to the inner-wall sheets 16 are sucked and removed by using the reaction-product removal apparatuses 15. In the same manner, a half turn of the inner wall sheets 16 is made when the semiconductor substrate is replaced; a cleaning operation is executed by using the reaction-product removal apparatuses 15.
Patent JP-2000021968-A (JP)
Title: Manufacture of semiconductor device
Inventor: YUNOKI ISAMU
IPC: H01L21/76
Filed: 1998-07-03
Abstract: PROBLEM TO BE SOLVED: To prevent the propagation of inhomogeneity of the remaining film caused by the variations of polishing speed of CMP, and to prevent the fluctuation in the characteristics of an MOS transistor in the forming method of a trench element isolation region using CMP for removal of an embedded oxide film. SOLUTION: Even when there is distribution in the thickness of a stopper nitride film 5 immediately after the CMP of an embedded oxide film 6, the film thickness distribution can be reduced by taking advantage of the etching selectivity ratio between the stopper nitride film 5 and the nitride film 3 located under the film 5 on the stage, where the oxide film 4 under the stopper nitride film 5 is removed. As a result, uniform thickness of the remaining film can be obtained when the element isolation structure is completed, and the characteristics of a stabilized MOS transistor can be obtained.
Patent JP-S6358403-A (JP)
Title: Production of color separation filter
Inventor: KANEDA OSAMU
IPC: G02B5/20
Filed: 1986-08-29
Abstract: PURPOSE:To prevent the decrease in the film thickness of the pattern in the peripheral part of a chip from the film thickness in the parts except the peripheral part of the chip by preliminarily forming the bank of a negative type dyeable photosensitive resin film to the peripheral part of the chip. CONSTITUTION:The negative type dyeable photosensitive resin film 11 is coated on a wafer segmented to plural pieces of the chips 10, then a photomask 13 formed to irradiate only the peripheral part 12 of the chip is brought into tight contact with or proximity to the resin film 11 and light 14 is projected thereto to expose the resin film 11. The bank 15 of the negative dyeable resin is preliminarily formed only to the peripheral part 12 of the chip by dissolving the uncured parts by development. The bank 15 of the negative type dyeable photosensitive resin is not removed as said resin is not dissolved in the liquid developer. Said bank remains in the peripheral part 12 of the chip to the last. The decrease of the film thickness of the pattern in the peripheral part of the chip from the film thickness in the parts except the peripheral part of the chip is thereby prevented.
Patent JP-H05230451-A (JP)
Title: Photoexcitable phosphor and its use in radiation photography
Inventor: POORU RUBURAN
IPC: G21K4/00
Filed: 1992-07-07
Abstract: PURPOSE: To provide a halosilicate useful as a photostimulable phosphor and its use in radiography.  
     CONSTITUTION: This is a photostimulable X-ray energy absorbing halosilicate phosphor, which contains as host metal at least one alkaline earth metal, and halogen, at least one member selected from the group consisting of Cl, Br, and I, as dopant Eu 2+  and lithium as copdopant. 
     COPYRIGHT: (C)1993,JPO
Patent JP-S5998093-A (JP)
Inventor: JIYON DEII SUPIBATSUKU
IPC: C08L7/00
Filed: 1983-10-31
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。