Patent SG-11201811476X-A (SG)
Title: Electro-depositing metal layers of uniform thickness on semiconducting wafers
Inventor: HRADIL GEORGE
IPC: H05K3/10
Filed: 2017-07-17
Abstract: WO 18/0 17 45 2 Al (12) INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property Organization International Bureau (43) International Publication Date 25 January 2018 (25.01.2018) WIPO I PCT ill mu °million °nolo III 0111010 VIII Imo oimIE (10) International Publication Number WO 2018/017452 Al (51) International Patent Classification: BO5B 5/04 (2006.01) C25D 7/12 (2006.01) C25D 5/02 (2006.01) H01L 21/288 (2006.01) C25D 5/08 (2006.01) H05K 3/10 (2006.01) C25D 5/16 (2006.01) A47L 15/22 (2006.01) (21) International Application Number: PCT/US2017/042323 (22) International Filing Date: 17 July 2017 (17.07.2017) (25) Filing Language: English (26) Publication Language: English (30) Priority Data: 62/364,538 20 July 2016 (20.07.2016) US (71) Applicant: TECHNIC, INC. [US/US]; 47 Molter Street, Cranston, RI 02910 (US). (72) Inventor; and (71) Applicant (for US only): HRADIL, George [US/US]; 63 Bay Road, Barrington, RI 02808 (US). (74) Agent: CSERR, Luann; Chace Ruttenberg & Freedman LLP, One Park Row, Suite 300, Providence, RI 02903 (US). (81) Designated States (unless otherwise indicated, for every kind of national protection available): AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (84) Designated States (unless otherwise indicated, for every kind of regional protection available): ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG). Published: with international search report (Art. 21(3)) (54) Title: ELECTRO-DEPOSITING METAL LAYERS OF UNIFORM THICKNESS ON SEMICONDUCTING WAFERS (57) : An apparatus for the electrodeposition of metals or metal alloys on semiconductor wafers is described. The apparatus includes plating cell, an anode disposed within the plating cell, a cathode comprising a semiconductor wafer po- sitioned with the surface to be electroplated facing and in spaced-apart relation to FIG. 2 the anode, a power supply providing electrical contact between the anode and the cathode, a hollow bar positioned mean the cathode having a series of spaced-apart holes facing the cathode and arranged in a line extending from one end or near one end of the cross bar to the other end or near end of the cross bar and means for rotating either the cathode or the hollow bar about a central axis to spray the surface of the semiconducting wafer to be plated continuously and repeatedly as the cathode or the solution spraying means rotates.