baber/WOPTO huggingface dataset:
Patent JP-S6242380-A (JP)
Title: Cassette cover device
Inventor: TORII TAKASHI
IPC: G11B33/02
Filed: 1985-08-20
Abstract: PURPOSE:To improve the workability and to eliminate a cause of defect such as damage at covering or uncovering a cover by pressing and deforming elastically one end of a tongue shaped rib having a cylindrical projection provided to both side faces of a cassette holder so as to release the interlock between the cylindrical projection and a hole. CONSTITUTION:In interlocking a cassette cover 3 to the cassette holder 4, the cassette cover 3 is moved in a circular arc form around a part A and the cylindrical projection 1 provided respectively with both side faces of the cassette holder 4 is interlocked to a hole 5 provided at both side faces of the cassette cover 3 at a part B. In this case, the cylindrical projection 1 is provided to the tongue rib 2 and interlocked while utilizing the elastic deformation of the rib 2. In releasing the interlock, one end of the rib 2 is pressed inward to apply elastic deformation to unlock the interlock between the cylindrical projection 1 and the hole 5. Thus, the workability in the manufacture process is improved and the possibility of defect of a cassette holder due to shock at covering or uncovering the cassette cover is precluded.
Patent JP-H0468381-A (JP)
Title: Transfer device
Inventor: MURAISHI TAKAYA
IPC: G03G15/16
Filed: 1990-07-09
Abstract: PURPOSE:To enter a transfer material into a transfer region in a state where its flatness is kept by providing a rotary body for transfer and a transfer material carrying means, and carrying the transfer material on the surface of the rotary body for transfer by the transfer material carrying means. CONSTITUTION:The rotary body for transfer 8 bringing the transfer material into contact with the surface of an image carrier 4, and the transfer carrying means 9 - 11 arranged on the upstream side compared with the rotary body for transfer 8, in the carrying direction of the transfer material, are provided. Then, the transfer sheet is guided by the upper and lower guiding plates 10 and 11, their end parts reach the surface of a transfer roller, and the leading edge corner of the transfer sheet is distorted and sags down by gravity, so that the transfer sheet comes in contact with the surface of the transfer roller 8 from the leading edge conner, and is straightened while it is moved toward a transfer region following with the rotation of the transfer roller 8. Thus, the transfer sheet can be entered into the transfer region in a state where its flatness is kept.
Patent JP-S6242530-A (JP)
Title: Manufacture of semiconductor device
Inventor: SUGINO SHIGEJI
IPC: H01L21/316
Filed: 1985-08-20
Abstract: PURPOSE:To prevent action to a substrate of an impurity by a method wherein chlorine gas is introduced into a reaction tank, beams are projected, the substrate is etched by generating chlorine radicals and a thin-film is formed. CONSTITUTION:An Si substrate 13 is placed on a susceptor 12 in a reaction tank 11, and the inside of the tank 11 is evacuated by a vacuum pump 16. Chlorine gas 17 is introduced into the tank 11 while the substrate 13 is heated at 100-500 deg.C by a heat source 14. The substrate 13 is irradiated by beams from a light source 15, and the surface of the substrate 13 is etched by generating chlorine radicals. Chlorine gas is removed from the inside of the tank 11, and a gas 18 for shaping a thin-film is introduced and the thin-film is formed onto the substrate 13. According to the method, chlorine radicals can be formed sufficiently at a low temperature through beam projection, and working to the substrate 13 of a trace quantity of impurities through which mixing is not avoided can be prevented.
Patent JP-H1030580-A (JP)
Title: Vane pump
Inventor: IKEDA TSUYOSHI
IPC: F04C2/344
Filed: 1996-07-11
Abstract: PROBLEM TO BE SOLVED: To reduce leakage from the inside of a vane pump for improvement of pump efficiency. SOLUTION: A cam ring 20 is fitted inside the housing 10 of a vane pump, a rotor 25 is stored inside the cam ring 20 so that it may rotate, and a vane chamber 24 is formed by bringing the front ends of a plurality of vanes 27 inserted in the rotor so that they may slide in a radial direction into contact with a cam surface so that they may slide. A sucking port 15 and a discharging port 16 are formed at the sliding surface of the housing according to respective vane chambers which conduct expanding stroke and compressing stroke, and a plurality of notches 31 which are formed at the sliding surface in a radial direction, meeting the respective vane chambers are communicated to each other by an annular communicating groove 32 which is coaxially-formed at the sliding surface.  The notches are fitted close to the front end part where the discharging port starts communicating with the vane chambers. A bearded groove 16a which extends in the opposite direction to the rotational direction of a rotor 25 from the discharging part is formed at the sliding surface of the housing, and the notch is preferably fitted in the vicinity of the front end of the groove.
Patent JP-H09107074-A (JP)
Title: Integrated static discharge protective circuit using substrate trigger lateral npn transistor
Inventor: EKANAYAKE AJISU AMERASEKERA
IPC: H01L27/06
Filed: 1996-07-11
Abstract: PROBLEM TO BE SOLVED: To bias the emitter-base junction of a lateral NPN forward by providing a substrate bias circuit for triggering a lateral NPN transistor. SOLUTION: A lateral NPN transistor 104 is arranged in a substrate layer 102. The lateral NPN transistor 104 has two N type diffusion regions 106, 108 as emitter and collector, respectively, and the base 112 is connected with the earth through the substrate 102 and an associated resistor 114. A substrate bias circuit 150 may be any circuit so long as the voltage across the substrate resistor 114 is increased during occurrence of ESD phenomenon. This circuit increases the base voltage of a lateral NPN transistor 104 to bias the emitter- base junction forward thus triggering the lateral NPN transistor 104. The NPN transistor 104 clamps the voltage of a pad 110 at 5-7V and dissipates the ESD current to protect the internal circuit 109.
Patent JP-S5867338-A (JP)
Inventor: MARDIS WILBUR S
IPC: C09D7/43
Filed: 1981-11-16
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。
Patent JP-2000022247-A (JP)
Title: Laser device
Inventor: WATABE AKIRA
IPC: H01S3/083
Filed: 1998-06-29
Abstract: PROBLEM TO BE SOLVED: To enable further reduction of loss of a reflection means as a laser resonator in a laser device having a laser medium and the reflection means. SOLUTION: A reflection means 21 includes first and second (s) polarization mirrors 21a and 21c and first and second plane mirrors 21b and 21d. The first (s) polarization mirror 21a is arranged opposed to a first end face 11a of a laser medium so that a first beam emitted from the first end face is directed to the mirror 21a at an incident angle of at least 30 degrees. The first plane mirror 21b is arranged opposed to the first mirror 21a so that a part of the first beam reflected by the mirror 21a is directed vertically to the mirror 21b. The second polarization mirror 21c is arranged opposed to a second end face 11b of the laser medium so that a second beam emitted from the second end of the laser medium is directed to the mirror 21c at an incident angle of at least 30 degrees.  The second plane mirror 21d is arranged opposed to the second mirror 21c so that a part of the second beam reflected by the second mirror 21c is directed vertically to the mirror 21d.
Patent JP-2000017685-A (JP)
Title: Constructing method of cutoff wall under obstruction
Inventor: KOTAKI YUTAKA
IPC: E02F5/06
Filed: 1998-06-29
Abstract: PROBLEM TO BE SOLVED: To provide the constructing method of a cutoff wall under an obstruction, in which the lower section of the underwater obstruction such as a box culvert is excavated from a ground and the cutoff wall can be built even when there is the obstruction on a field, where the cutoff wall is constructed under the ground. SOLUTION: A guide steel material C is built into a pit B beforehand excavated while being adjoined to an obstruction A, a chain-saw excavator E, in which a chain-saw cutter section is freely erected and brought down, is lowered in the pit B along the guide steel material C under the state, in which the front end of the chain-saw cutter section is directed downwards, excavation is conducted while erecting the chain-saw cutter section and the chain-saw cuter section is erected up to a horizontal position when the chain-saw excavator E is passed on the obstruction A, and the chain-saw excavator E is brought down along the guide steel material C under the state, in which the chain-saw cutter section is erected up to the horizontal position, and a continuous ditch F is excavated under the obstruction A.  Excavation is completed up to designed depth, an impervious sheet is inserted, and a solidifying material such as mortar is placed and the cutoff wall is manufactured.
Patent JP-S5879475-A (JP)
Inventor: HANSUPEETAA SHIYUNAIDAA
IPC: H02M7/757
Filed: 1982-10-18
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。
Patent JP-H0471647-A (JP)
Title: Production of catalytic carrier for exhaust gas convertor
Inventor: ISHII KAZUHIDE
IPC: F01N3/28
Filed: 1990-07-12
Abstract: PURPOSE:To obtain a catalytic carrier for an exhaust gas converter which is difficult to be deformed by utilizing a metallic foil consisting of a specified amount of Al, Cr and the other specified metal and alternately laminating the plate-like metallic foil and the corrugated metallic foil or laminating the corrugated metallic foils with each other. CONSTITUTION:A metallic foil is utilized which contains 2.5-8wt.% Al and 5-30wt.% Cr and consists of the balance Fe and inevitable impurities. When the catalytic carrier for an exhaust gas convetor is produced by alternately laminating the plate-like metallic foil and the corrugated metallic foil or laminating the corrugated metallic foils with each other, the metallic foil is oxidatively treated and an oxidative film having a thickness of at least 0.2mg/cm<2> expressed in terms of the amount of oxide is formed on the surface. Furthermore the metallic foil preferably contains at least one kind selected from the group consisting of 0.01-0.5wt.% Ti, Nb, Zr, V and Y, 0.001-0.3wt.% La, Ce, Nd and Gd and 0.1-3.0wt.% Co and Si. Since the formed film contains alumina as a main component, the catalytic carrier is made difficult to be deformed even at high temp. and deformation thereof is reduced.
Patent JP-H0346817-A (JP)
Title: Pulse generator
Inventor: ITO HISAHARU
IPC: H03K7/08
Filed: 1989-07-15
Abstract: PURPOSE:To improve the setting precision of the on/off duty by providing a pulse width control means which changes high level section and low level section setting data independently of each other, and obtaining the output pulse signal subjected to pulse width modulation from a toggle flip flop circuit. CONSTITUTION:The pulse width control means consists of a microprocessor, and high level section and low level section setting data are inputted to input terminals IN1 to IN12 of a data latch circuit 1. These data are latched by the timing signal outputted from a timing control circuit 4. The ripple carry signal from a presettable counter circuit 2 which counts the clock having a cetain period and to which these data are alternately set is used as the trigger clock of a toggle flip flop circuit 3. Then, the output pulse subjected to pulse width modulation is obtained from the circuit 3. Consequently, high level and low level sections of the microprocessor can be arbitrarily set, and the setting precision of the on/off duty is improved.
Patent JP-H0824465-A (JP)
Title: Electric washing machine
Inventor: TAKAHASHI YOSHIO
IPC: D06F17/12
Filed: 1994-07-12
Abstract: PURPOSE:To improve the cleaning effect, and prevent the damage of clothes by providing a tank with a number of air blowout holes for compressed air in the tank to feed the compressed air. CONSTITUTION:The tank 2 has a number of air blowout holes 4. A compressed air is fed into the tank 2 through the air blow-off holes 3. Bubbles are generated by the compressed air to vibrate water itself. The resistance in the interface between the water and the bubbles and the surface tension of the water also work, and a washing machine enhanced in cleaning effect and soft to clothes can be thus provided.
Patent JP-S6075835-A (JP)
Title: Pellicle
Inventor: MIZUNO FUMIO
IPC: G03F1/00
Filed: 1983-10-03
Abstract: PURPOSE:To prevent an adhesive agent from remaining on a mask base plate as a foreign matter in the stage of adhering a pellicle frame to the mask base plate by forming the surface of an adhesive agent layer to be adhered with the mask base plate in way as to have the adhesion power weaker than the surface to be adhered with the pellicle frame. CONSTITUTION:A transparent pellicle film 2 is adhered to one end side of a pellicle frame 1 consisting of an annular frame body and the opposite end face of the frame 1 is adhered by an adhesive agent 3 to the surface of a mask substrate 4 which is formed of glass or the like and on which surface a pattern 5 is formed. The adhesive agent 3 in this stage is formed of two layers of adhesive agent layers having different adhesion powers, i.e., a double-coated tape material 3c provided with the strong adhesive power layer 3a on the frame 1 side and the weak adhesive power layer 3b on the mask base plate side 4. An equally good result is also obtd. by forming the adhesive agent layer of one adhesive agent layer and treating the surface 3e of the adhesive agent layer to be adhered with the mask base plate so as to have the adhesion power weaker than the adhesion power of the surface 3d to be adhered with the pellicle frame.
Patent JP-S6075575-A (JP)
Title: Chemical vapor phase plating apparatus
Inventor: BABA NOBORU
IPC: C23C16/44
Filed: 1983-10-03
Abstract: PURPOSE:To form a high-purity plated film at high speed without the contamination of an unreacted raw gas with a by-product gas by providing ports for discharging the by-product gas from the plating to the upper and the lower side of a reaction vessel of a chemical vapor-phase plating apparatus. CONSTITUTION:A substrate 2 to be plated is placed on a revolving stand 7 in a reaction vessel 4, and heated to a reaction temp. with a heating coil 3. A raw gas for chemical-vapor phase plating is then supplied into the reaction vessel 4 from an inlet 1, and a plated film is formed on the surface of the substrate 2 by the thermal decomposition or the vapor-phase reaction of the raw gas. In this case, since the by-product gas from the plating is rapidly discharged from an upper gas discharge port 5 and a lower gas discharge port 6, the raw gas is not contaminated with the by-product gas and the high-purity and uniform-thickness plated film can be formed at high speed.
Patent JP-H0232551-A (JP)
Title: Semiconductor device
Inventor: MIWA HIROYUKI
IPC: H01L21/76
Filed: 1988-07-22
Abstract: PURPOSE:To realize a small area and high density without deteriorating reliability by chamfering corners of an element isolation region. CONSTITUTION:An element isolation region 10 wherein a semiconductor layer is buried through an SiO2 insulation layer is formed inside a square ringed pattern groove 5 enclosing an element formation region 12, and an element isolation region 11 is formed on a periphery thereof. Corner sections 24c1-24c4 of an inner circumference of the region 11 is chamfered linearly or in an arc. An inner circumference of the region 11 is formed at an almost same interval all over along a corner section of a region 10 which has ronded corner sections.
Patent JP-S6161218-A (JP)
Title: Manufacture of thin film magnetic head
Inventor: KITAMURA MIKIO
IPC: G11B5/31
Filed: 1984-08-31
Abstract: PURPOSE:To prevent occurrence of defective level differences on an insulating layer at the time of forming an conductive coil pattern by forming a conductive film wholly beforehand when providing the conductive coil pattern, and making the conducting coil pattern by partial oxidation by an anodic oxidation process. CONSTITUTION:A thin film 2 is formed over the whole surface on an end side on a substrate 1, and through-holes are provided at several places. Then, a conductive film 8' of Al is formed on the thin film 2 including the through-hole s. Resists 9, 9- insoluble in an anodic oxidation solution are coated on intended parts 8'', 8''- for forming coil pattern in the conductive coil 8'. The body of the substrate 1 is immersed in the anodic oxidation solution, and an electric current is applied by using the substrate 1 as an anode and the anodic oxidation solution as a cathode to anodize the parts 10, 10- of the conductive film 8' not covered by resists 9, 9-. Then, the resists 9, 9- are stripped off and a conductive layer 11 is formed on the conductive coil patterns 8, 8- and oxidized parts 10, 10- and a ferromagnetic thin film 12 is formed.
Patent JP-H07227572-A (JP)
Title: Vibration generator
Inventor: SHINOHARA SHIGERU
IPC: B06B1/18
Filed: 1994-08-04
Abstract: PURPOSE:To generate vibration with a cylinder and to simplify the hydraulic oil supply mechanism. CONSTITUTION:This vibration generator consists of a cylinder 1 having the first chamber 4 of a small pressure receiving area and second chamber 5 of a large pressure receiving area formed by the cylindrical main body 2, piston 3 and rod 6. The main body 2 is fixed and the rod 6 is slid or vice versa, the first chamber 4 is always communicated with a hydraulic source, the second chamber 5 is communicated alternately with the hydraulic source and a tank by hydraulic supply mechanism, the hydraulic oil is supplied to the second chamber 5, and hence vibration is generated.
Patent JP-S6340374-A (JP)
Title: Mos-type semiconductor device and manufacture thereof
Inventor: HARADA HIROSHI
IPC: H01L21/336
Filed: 1986-08-05
Abstract: PURPOSE:To decrease excess distance for masking by a method wherein a drain electrode is constituted of a high-concentration impurity region and low- concentration impurity region in the vicinity of a gate electrode and a re-diffusion layer is formed at a region wherein the drain electrode comes into contact with a metal wiring. CONSTITUTION:A field insulating film 22, gate insulating film 23, and gate electrode 24 are formed on a semiconductor substrate 21. Ion implantation is accomplished for the formation of a low-concentration impurity region 25 opposite to the substrate 21 in type of conductivity. Next, a resist pattern 26 is selectively formed, after which ion implantation is accomplished for the formation of a high-concentration impurity region 27. Further, an interlayer insulating film 28, contact hole 29, and PSG film 30 are formed, annealing is accomplished, and then diffusion of phosphorus is accomplished for the formation of a high-concentration re-diffusion layer 31. Consequently, even when the contact hole 29 is so open as to reach the low-concentration impurity region 25 due to a displaced mask, the contact hole 29 may be provided in the re-diffusion layer 31 or in the high-concentration impurity region 27.
Patent JP-S5890481-A (JP)
Inventor: DOBASHI AKIRA
IPC: B25J9/06
Filed: 1981-11-18
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。
Patent JP-2000017995-A (JP)
Title: Segment joint structure and internal pressure resisting segment
Inventor: TANAKA KIYOSHI
IPC: E21D11/08
Filed: 1998-06-30
Abstract: PROBLEM TO BE SOLVED: To resist load (internal pressure) from an inner periphery, without secondary lining. SOLUTION: A tenon 12 that continues in the circumferential direction of a cylindrical structure is projected from one 11 of the ring joint end faces of an arcuate segment 10, and a mortise 14 is provided in the other ring-to-ring joint end face 13 to correspond to the tenon 12. The tenon 12 and the mortise 14 are provided with respective pluralities of widening parts 12a, 12b, 12b and widening parts 14a, 14b, 14b, both of which are spaced apart from one another in the circumferential direction of the cylindrical structure.  When the cylindrical structure such as a shield tunnel receiving internal pressure is constructed by assembling the plurality of segments 10, 10... into a cylindrical shape, each segment 10 is joined to the other segments 10, 10 adjoining to one another in the longitudinal direction of the cylindrical structure, by engaging the mortise 14 of the ring-to-ring junction end face 13 with the tenons 12, 12 of the ring junction end faces 11, 11 in such a manner that the widening parts 14a, 14b, 14b are aligned with the widening parts 12a, 12b, 12b, so that the segments 10, 10... restrain circumferential and radial relative movements to one another.
Patent JP-S6161473-A (JP)
Title: Field effect type element
Inventor: TOIDA HIKARI
IPC: H01L29/778
Filed: 1984-09-03
Abstract: PURPOSE:To obtain a field effect type element which has a hetero junction including high speed and excellent low noise by forming a control electrode region for controlling the voltage near a current passage of the region between a gate region and a drain electrode region from the opposite side of the gate electrode region with respect to the current passage. CONSTITUTION:A P type GaAs having approx. 2X10<19>cm<-3> of an acceptor impurity concentration is, for example, used as a control electrode region 47 for varying the potential near a channel 48, and Schottky-contacted with alumi num out of an element on the P type GaAs. A negative voltage Vo is applied to the region 47 to deepen a potential well, and carrier can move between source and drain electrode regions while holding the state that enclosed in quasi-secondary potential well. Thus, since the carrier having secondary property including less scattering has high moving speed, mutual conductance and saturat ed current can be increased.
Patent JP-H0234430-A (JP)
Title: Differential control clutch control method for front/ rear wheel drive car
Inventor: NISHIKAWA SEIICHI
IPC: B60K17/346
Filed: 1988-07-22
Abstract: PURPOSE:To provide possibility of quick starting of differential limiting control at the same time as finish of anti-skid control by maintaining the differential limiting force of a differential control clutch at a specified value within an extent having no influence upon eventually on-going implementation of anti-skid control. CONSTITUTION:An electronic control device 86 controls a hydraulic control circuit 16 of an automatic transmission 14 on the basis of amount of accelerator pedal being stamped, car speed, and the position of shift lever. The anti-skid hydraulic control circuit 126 of each wheel cylinder 124 is controlled so that slip values of the front wheels 24 with rear wheels 28 lie within normal extent. A clutch hydraulic control circuit 84 of a differential control clutch 82 is controlled on the basis of the opening of a throttle valve, engine revolving speed, and the gear ratio. During implementation of anti-skid control, the differential limiting force of the differential control clutch 82 is maintained at a specified value in an extent having no influence upon this implementation.