Patent SG-11201810055P-A (SG)
Title: A method for processing silicon material
Inventor: WENHAM STUART ROSS
IPC: H01L31/18
Filed: 2017-06-06
Abstract: INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property :::` , 41141311111101111WHEMININEEIMMEMIE Organization International Bureau (10) International Publication Number 03 (43) International Publication Date .....•\"\"- WO 2017/210731 Al 14 December 2017 (14.12.2017) WIP0 I PCT (51) International Patent Classification: 2033 (AU). CHONG, Chee Mun; 1/1-3 Cooper Park, HO1L 31/18 (2006.01) H01L 21/30 (2006.01) Bellevue Hill, New South Wales 2023 (AU). CHEN, (21) International Application Number: Ran; 2214/43 Wilson Street, Botany, New South Wales PCT/AU2017/050560 2019 (AU). ABBOTT, Malcolm David; 36 Dalleys Road, Naremburn, New South Wales 2065 (AU). PAYNE, David (22) International Filing Date: Neil; 1/81 Doncaster Avenue, Kensington, New South 06 June 2017 (06.06.2017) Wales 2033 (AU). (25) Filing Language: English (74) Agent: GRIFFITH HACK; Level 29 Northpoint, 100 Miller Street, North Sydney, New South Wales 2060 (AU). (26) Publication Language: English (81) Designated States (unless otherwise indicated, for every (30) Priority Data: kind of national protection available): AE, AG, AL, AM, 2016902198 06 June 2016 (06.06.2016) AU AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, (71) Applicant: NEWSOUTH INNOVATIONS PTY CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, LIMITED [AU/AU]; Rupert Myers Building, Gate 14, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, Barker Street, UNSW, Sydney, New South Wales 2052 HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, (AU). KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, (72) Inventors: WENHAM, Stuart Ross; 19 Sturt Road, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, Cronulla, New South Wales 2230 (AU). CIESLA, Alison; SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, — 19 Sturt Road, Cronulla, New South Wales 2230 (AU). TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. - HALLAM, Brett Jason; 36A Washington Street, BEX- = LEY, New South Wales 2207 (AU). CHAN, Catherine (84) Designated States (unless otherwise indicated, for every Emily; 1 Darling Street, Kensington, New South Wales kind of regional protection available): ARIPO (BW, GH, (54) Title: A METHOD FOR PROCESSING SILICON MATERIAL = = 500 = = — = = = 502 - Providing a p-type substrate 552 and forming a diffused n-type region 554 in the substrate to form a p-n junction and depositing passivation layer 556 / = 'a 558 = = 504 - Screen printing and drying metal contacts 558 and 560 556 = 554 = = 506 - Firing of metal contacts at a peak — = temperature between 700 C and 900°C ° together with an illuminated __ = hydrogenation process 552 — 508 - Contact re-firing at 600 ° C and 700°C 557 559 560 1-1 3' Il M 510 - Illuminated hydrogenation process at 150 ° C to 400°C FIGURE 5(b) IN 0 1-1 FIGURE 5(a) ei —.... IN ,-1 (57) : The present disclosure provides methods for manufacturing a photovoltaic device that comprise a sequence of annealing 0 steps and exposure to electromagnetic radiation during annealing that allow passivating electrically active defects and stabilising the \" performance of photovoltaic device. C [Continued on next page] WO 2017/210731 Al MIDEDIMOMOIDEIRMEMO011illnill0MilflOVOIMIE GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG). Published: — with international search report (Art. 21(3))