baber/WOPTO huggingface dataset:
Patent TW-409289-B (TW)
Title: Method and apparatus for detecting the endpoint of a chamber cleaning
Inventor: BLONIGAN WENDELL T
IPC: C23C16/44
Filed: 1998-07-29
Granted: 2000-10-21
Abstract: A method and apparatus for cleaning a CVD chamber including optoelectronic detection of the completion or endpoint of the cleaning procedure once a ratio of emission lines reaches a threshold value. The method comprises the steps of providing a plasma of a cleaning gas into the chamber and creating a plasma from the cleaning gas. The intensity of emission lines of the cleaning gas and of at least one background in the chamber are monitored. A ratio of the intensity of the cleaning gas emission line to the intensity of the background gas emission line is determined and monitored as a function of time. The determined ratio is compared to a preset threshold calibration value. The flow of gas is controlled based on the comparing step. The apparatus includes a cleaning gas supply with a valved inlet providing an entrance to the interior of the chamber for passing cleaning gas to the interior of the chamber. A detector having an optical input is disposed for sensing the electromagnetic radiation. The detector has a first channel for detecting a relative intensity of an emission line corresponding to the cleaning gas and a second channel for detecting a relative intensity.
Patent TW-396278-B (TW)
Title: Rod lens array and life-size imaging optical apparatus using the same
Inventor: TACHITAKA SHIGEO
IPC: G02B27/18
Filed: 1998-08-17
Granted: 2000-07-01
Abstract: In a rod lens array in which a plurality of rod lenses each having a refractive-index distribution in the radial direction are arranged in one row such that the optical axes are parallel to each other, and in a life-size imaging optical apparatus using the rod lens array, the outside diameter of each rod lens is such that 0.05 mm<=R<=0.25 mm and 0.5 R<=Ro<=1.0 R (2R: the distance between the optical axes of adjacent rod lenses and Ro: the radius of the effective area of each rod lens that provides a lens action) and the degree of overlap m defined by m= Xo/2R is such that 1.61<=m<=1.80 or 2.06<=m<=2.50 where Xo is the view radius of a single rod lens which is given by Xo=-r/cos (Zo<Pie>/P).
Patent TW-432537-B (TW)
Title: Method for preventing the shift of start voltage during thermal treatment process
Inventor: CHEN SEN-FU
IPC: H01L21/322
Filed: 1998-11-06
Granted: 2001-05-01
Abstract: The present invention relates to a method for preventing the shift of the start voltage caused by the automatic doping, which comprises: providing a semiconductor wafer having a front face formed thereon a memory having a source/drain region, a gate of a memory having a first polysilicon layer, a dielectric polysilicon oxide layer and a second polysilicon layer, and the back face of the wafer having a doped polysilicon layer, in which the source/drain region is doped with a conductive doping, and the upper surface of the source/drain is exposed on the upper surface of the semiconductor wafer or covered by an oxide layer with a thickness smaller than 5 nm; forming a cover layer with a thickness of about 15-30 nm, in which the cover layer can be a dielectric layer selected from a group consisting of a free oxide layer, a nitride layer, and SiON, or an undoped polysilicon layer or amorphous silicon layer with a thickness of about 20-30 nm; and annealing to form a source/drain junction.
Patent TW-434717-B (TW)
Title: System and method for etching organic anti-reflective coating from a substrate
Inventor: YAN CHUN
IPC: H01L21/3213
Filed: 1998-12-08
Granted: 2001-05-16
Abstract: The present invention is embodied in a method and apparatus for etching an organic anti-reflective coating (OARC) layer and a titanium nitride anti-reflective coating (TiN ARC) layer deposited on a substrate located within a processing chamber, without the need for removing the substrate being processed from the processing chamber in which it is situated and without the need for intervening processing steps, such as chamber cleaning operations. The substrate has a base, an underlying oxide layer above the base, an overlying layer above the underlying layer, a middle conductive layer, a TiN ARC layer, and a top OARC layer spun on top of the TiN ARC.
Patent TW-385293-B (TW)
Title: Primary packaging unit for film-like or wafer-like administration forms
Inventor: CREMER KARSTEN DR
IPC: B65D75/52
Filed: 1998-12-31
Granted: 2000-03-21
Abstract: A primary packaging unit for film-like or wafer-like administration forms for oral application with an off-cut of an upper web of packaging material (1) and of an lower web of packaging material (2) is characterized in that a plurality of dosage units (5) of a film-like or wafer-like administration form, individually sealed in flat compartments (8) formed without cold or hot forming of the packaging material and spaced at a distance to one another, are present in a primary packaging unit, and there are perforations between the compartments (8) which enable the separation of individual compartments (8), if necessary.
Patent TW-451365-B (TW)
Title: Semiconductor package with dual chips
Inventor: HUANG JIAN-PING
IPC: H01L23/495
Filed: 1999-01-18
Granted: 2001-08-21
Abstract: The present invention discloses a semiconductor package with dual chips, which comprises the first lead frame having the first die pad for bonding the first chip having a single-sided bonding pad, and a plurality of single-sided first lead electrically connected with the bonding pad of the first chip; the second lead frame having the second die pad for bonding the second chip having a single-sided bonding pad, and a plurality of single-sided second leads electrically connected with the bonding pad of the second chip; and the encapsulation to wrap the first lead frame, the first chip, the second lead frame, and the second chip, but to expose the external lead of the first lead of the first lead frame and the external lead of the second lead of the second lead frame. The area of the first chip bonded to the first die pad and the area of the second chip bonded to the second die pad are less than the total area of the first chip and the total area of the second chip, respectively, so that the first die pad and the second die pad are located in the first chip and the second chip, and they are separated, and the bottom surface of the first die pad has a spacing to the bottom surface of the second chip, and the bottom surface of the second die pad has a spacing to the bottom surface of the first chip, therefore the delamination phenomena after bonding each chip and die pad can be greatly reduced, and packaging can be proceeded by a traditional packaging process and equipment to thereby reduce the manufacturing cost and simplify the process.
Patent TW-546283-B (TW)
Title: Method for production of acrolein and acrylic acid
Inventor: TANIMOTO MICHIO
IPC: B01J23/887
Filed: 1999-05-14
Granted: 2003-08-11
Abstract: In the production of acrolein and acrylic acid by the catalytic gas phase oxidation of propylene with a molecular oxygen-containing gas, a method is provided which enables acrolein and acrylic acid to be stably produced with a high yield for a long time from propylene by effectively repressing such secondary reactions as are responsible for the formation of organic acids, high boiling compounds, and tarry compounds, the deposition of carbonized materials, and the deterioration of the quality of products. The content of unsaturated hydrocarbons (excluding propylene) of 2 to 5 carbon atoms in the raw material for propylene is kept below 500 ppm (by weight). Particularly, it is proper to use a raw material for propylene which has a content of unsaturated hydrocarbons (excluding propylene) of 2 to 5 carbon atoms of not more than 200 ppm (by weight) and a total content of diene and acetylenic compounds of 2 to 5 carbon atoms of not more than 200 ppm (by weight).
Patent TW-430727-B (TW)
Title: Isolation valves method of sealing adjacent chambers using the same and a substrate processing system with the isolation valves
Inventor: ETTINGER GARY C
IPC: F16K51/02
Filed: 1999-05-20
Granted: 2001-04-21
Abstract: Isolation valves for selectively sealing a first region from a second region. A gate valve can include a housing which defines a channel between the first and second regions. The valve includes a gate, located in the housing, and displaceable between a stowed position and a deployed position. When the gate is in the stowed position, communi-cation is permitted between the first and second regions. When the gate is in the deployed position, the gate spans the channel and can be controlled to isolate the first and second regions. The valves can be used, for example, in connection with systems for processing large glass sub-strates. The valves are particularly useful for isolating long rectangular openings, such as the openings in substrate processing chambers. Isolating processing chambers or load lock chambers from one another, for example, in a linear system, is facilitated.
Patent TW-442987-B (TW)
Title: Nickel hydrogen secondary battery
Inventor: HARADA KAZUHIKO
IPC: H01M50/50
Filed: 1999-06-07
Granted: 2001-06-23
Abstract: The present invention provides a nickel-hydrogen secondary battery, wherein a positive electrode including a positive electrode mixture which contains a nickel compound as a major component and a negative electrode including a negative electrode mixture which has a binder and conductive material and contains a hydrogen absorbing alloy as a major component are stacked up alternately or rolled up with a separator interposed therebetween to form an electrode group. A battery case contains the electrode group together with an electrolyte and the battery case has an opening closed with a sealing plate which is provided with a positive electrode terminal. The binder contains at least carboxylated styrene-butadiene copolymer latex, the conductive material contains metal flakes or short metal fibers, and an edge portion of the collector sheet of the negative electrode is electrically connected to the battery case via a collector plate welded to the edge portion of the collector sheet.
Patent TW-403940-B (TW)
Title: A reduction of the line width by photolithography process
Inventor: SHEN YUN-HUNG
IPC: H01L21/027
Filed: 1999-07-01
Granted: 2000-09-01
Abstract: A reduction of the line width by photolithography process, which applies to define the thin-film and comprises the following steps: form a oxynitride layer on the thin film and form an organic bottom anti-reflective layer on the oxynitride layer. Next, define said photoresist layer through exposure and developing. Next, etch the organic bottom anti-reflective layer and the photoresist layer on the same time with oxygen plasma until the oxynitride layer is exposed to reduce the line width of the  photoresist layer.
Patent TW-417207-B (TW)
Title: Fabricating process of conduction layer to for preventing charge damage
Inventor: CHIAN WEN-JENG
IPC: H01L21/322
Filed: 1999-07-20
Granted: 2001-01-01
Abstract: This invention relates to the fabricating process of conduction layer to prevent causing charge damage and includes the following procedures. First, a conduction layer is formed on the substrate. A layer of photoresist is then used to cover the surface of conduction layer. An etching process is then performed to the conduction layer that is not covered with the photoresist and a magnetic field is applied during the etching process. Finally, the photoresist is stripped after the etching process is stopped. This invention can be used to solve the plasma charging problem, which is caused by charge accumulation, and also can be used to eliminate the charge damage, which is caused during the conventional etching process, so as to obtain better process property.
Patent TW-544801-B (TW)
Title: Techniques for forming contact holes through to a silicon layer of a substrate
Inventor: EBEL TIMOTHY M
IPC: H01L21/3065
Filed: 1999-08-30
Granted: 2003-08-01
Abstract: A method for simultaneously stripping a photoresist mask employed for etching, in a low pressure, high density plasma processing chamber, a contact hole through an oxide layer to a silicon layer of a substrate and soft etching a surface of the silicon layer at a bottom of the contact hole. The technique of simultaneously stripping and soft etching is configured to substantially remove the photoresist mask and reducing a contact resistance at the bottom of the contact hole simultaneously. The method includes flowing an etchant source gas comprising a fluorocarbon and O2into the plasma processing chamber after the contact hole is formed but prior to filling the contact hole with a substantially conductive material. There is also included forming a plasma from the etchant source gas. Additionally, there is included employing the plasma for simultaneously stripping and soft etching for a predefined duration sufficient to lower a contact resistance between the silicon substrate and the substantially conductive material that is subsequently deposited into the contact hole to a predefined acceptable level.
Patent TW-498053-B (TW)
Title: Process for the aqueous purification of hydrogen peroxide containing impurities
Inventor: DEVOS CHRISTINE
IPC: B01D15/04
Filed: 1999-10-05
Granted: 2002-08-11
Abstract: Process for purifying an aqueous hydrogen peroxide solution containing impurities, some of which are in ionic form, in which the said aqueous solution is purified by passing it through at least one first resin of anionic type in order to remove at least some anionic impurities, and then through a second resin of cationic type in order to remove at least some of the cationic impurities, or vice versa, characterized in that at least a first and a second bed of a first resin of anionic type are arranged in parallel, in that the aqueous solution is directed alternately onto the said first or the said second bed, and in that changeover from the first bed to the second bed (or vice versa) is carried out when the said first [lacuna] is at least partially saturated with at least one of the anions constituting the anionic impurities.
Patent TW-426945-B (TW)
Title: Method for making semiconductor device with via hole
Inventor: WANG JIAN-JIUN
IPC: H01L21/76
Filed: 1999-10-15
Granted: 2001-03-21
Abstract: The present invention provides a method for making a semiconductor device with a via hole and a semiconductor structure produced therefrom. The method comprises: providing a semiconductor substrate having a first metal wiring thereon; forming a first intermetal dielectric layer on the first metal wiring; planarizing top surface of the first intermetal dielectric layer thereof with the top surface of the first metal wiring; forming an etch stop layer on the first metal wiring and the first intermetal dielectric layer; forming an oxide layer on the etch stop layer; using a two-step etching to form a via hole in the oxide layer and the etch stop layer so that the via hole can reach the first metal wiring.
Patent TW-444074-B (TW)
Title: Highly oriented polyolefin fibre
Inventor: SIMMELINK JOSEPH ARNOLD PAUL M
IPC: D01F6/04
Filed: 1999-11-02
Granted: 2001-07-01
Abstract: The invention relates to a highly oriented polyolefin fibre containing polyolefin with an intrinsic viscosity of at least 5 dl/g, which fibre has a tensile strength of at least 26 cN/dtex and a modulus of tension of at least 700 cN/dtex, a process for the preparation thereof and the use in ropes or anti-ballistic shaped articles. The invention also relates to improved ropes and anti-ballistic shaped articles. The highly oriented polyolefin fibre according to the invention has improved properties in applications such as, in particular, anti-ballistic shaped articles since the fibre contains 0.05-5 wt.% of a solvent for the polyolefin (relative to the total fibre weight).
Patent TW-450885-B (TW)
Title: A method for controlling wall thickness of parison in PC-based extrusion blow molding machine
Inventor: HUNG JIAN-JUNG
IPC: B29C48/92
Filed: 1999-11-03
Granted: 2001-08-21
Abstract: Disclosed is a method for controlling the wall thickness of a parison in a PC-based extrusion blow molding machine, where a PC Windows environment serves as a human-machine interface. Via a communication interface, a digital control unit using a single chipset the main controller is connected to construct a complete wall thickness control circuit, and to monitor and control parison wall thickness. Via the human-machine interface of the personal computer, the appearance of the parison can be edited, configured, the parameters and data of the machine can be configured, the optimum control parameters can be tested and a real-time extrusion control display can be shown. The digital single-chipset main controller controls the servo valve output according to the parameters obtained from tests in order to perform die position control.
Patent TW-451161-B (TW)
Title: Automatically-activated hand-supportable laser scanning bar code symbol reading system with data transmission activation switch
Inventor: WILZ DAVID M SR
IPC: G06K7/14
Filed: 2000-01-18
Granted: 2001-08-21
Abstract: Disclosed is an automatically-activated code symbol reading system comprising a bar code symbol reading mechanism contained within a hand-supportable housing having a manuallyactivatable data transmission switch. During symbol reading operations, the bar code symbol reading mechanism automatically generates a visible laser scanning pattern for repeatedly reading one or more bar code symbols on an object during a bar code symbol reading cycle, and automatically generating a new symbol character data string in response to each bar code symbol read thereby. During system operation, the user visually aligns the visible laser scanning pattern with a particular bar code symbol on an object (e.g. product, bar code menu, etc.) so that the bar code symbol is scanned, detected and decoded in a cyclical manner. Each time the scanned bar code symbol is successfully read during a bar code symbol reading cycle, a new bar code symbol character string is produced, while an indicator light on the hand-supportable housing is actively driven. During the bar code symbol reading cycle, the user actuates the data transmission switch producing a data transmission control activation signal and enabling a currently or subsequently produced symbol character data string to be automatically selected and transmitted to the host system. By virtue of the present invention, automatically-activated hand-supportable bar code symbol readers are now able to accurately read, in an unprecedented manner, bar code symbols on bar code menus, consumer products positioned in crowded point-of-sale environments, and other objects requiring automatic identification and/or information access.
Patent TW-425328-B (TW)
Title: Drill and processing method, stage processing method and manufacture of exposure device
Inventor: HANAI SHIGERU
IPC: B24D7/10
Filed: 1999-12-29
Granted: 2001-03-11
Abstract: To provide a drill and a processing method which can process a hole without forming a core, and can process the hole to an inner wall surface at a high surface accuracy, without requiring an excessive processing, in the drill and the processing method used when a deep hole is processed in a relatively small hole diameter. A shank 2 able to be rotated by making a cylindrical center shaft as a rotating shaft is provided; and a cutting part 4 in which at least abrasive grains for cutting are fixed to the surface of its rotating center 22 is provided to the front end of the shank 2. By feeding the cutting part 4 in the rotary shaft direction by rotating the shank 2, and by boring processing while pushing the surface of the rotating center where the abrasive grains for cutting are fixed, to a work, the hole can be formed without forming a core during the hole processing.
Patent TW-I227248-B (TW)
Title: Double metal cyanide catalysts for preparing polyetherpolyols
Inventor: HOFMANN JORG
IPC: B01J37/04
Filed: 2000-02-11
Granted: 2005-02-01
Abstract: The invention relates to new double metal cyanide (DMC) catalysts for preparing polyetherpolyols by polyaddition of alkylene oxides to starter compounds which contain active hydrogen atoms, wherein the catalyst comprises (a) double metal cyanide compounds, (b) bile acids or their salts, esters or amides and (c) organic complex ligands. The catalysts according to the invention show greatly increased activity during preparation of polyetherpolyols.
Patent TW-491017-B (TW)
Title: Multilayer wiring board
Inventor: OHI MASAYUKI
IPC: H01L21/48
Filed: 2000-03-08
Granted: 2002-06-11
Abstract: A multilayer wiring board including a core board which comprises a resin baseplate, outer wiring patterns on one and the other sides of the core board, respectively, and throughholes penetrating the core board and having a side wall coated with a conductive material electrically connecting the outer wiring patterns with each other, wherein a space within the throughholes is filled with a filler material having a thermal expansion coefficient substantially equal to that of the resin baseplate.
Patent TW-498164-B (TW)
Title: Integrated circuit testing device with dual purpose analog and digital channels
Inventor: DINTEMAN BRYAN J
IPC: H04B1/74
Filed: 2000-03-15
Granted: 2002-08-11
Abstract: An integrated circuit (IC) tester includes a set of dual-purpose digital/analog channels. Each tester channel includes a driver capable of supplying either a digital or analog test signal input to an IC terminal and a receiver for digitizing and processing either an analog or digital IC output signal appearing at the DUT terminal to produce results data representing the behavior of that IC output signal during a test. A test is organized into a succession of test cycles, and before each test cycle a pattern generator within each channel produces data for controlling the behavior of the driver and receiver during the test cycle. The control data controls whether the driver is to produce an analog or a digital test signal, controls a magnitude or logic level to which the test signal is to be driven during the test cycle, and controls a time during the test cycle of any test signal state or magnitude changes. The control data also indicates how and when the receiver digitizes and processes an IC output signal during the test cycle.
Patent TW-467804-B (TW)
Title: Multi-zone polishing pad conditioning device and method for CMP system
Inventor: PENG SHUANG-NENG
IPC: B24B7/24
Filed: 2000-03-15
Granted: 2001-12-11
Abstract: Disclosed is a multi-zone polishing pad conditioning device and method for CMP system. This device includes one or a plurality of rollers or circular discs, and the downward pressure and rotational speed of the plural rollers and circular discs can be suitably adjusted as needed. This device further at least comprises one driving device for driving the plural rollers or circular discs. The uniformity of the abrasive pads can be improved by means of such a device and method, and the polishing pads conforming with the requirement can be obtained based on the profile distribution of different wafers. Such a device and method can compensate for the uniformity of the deposit film formed at the late stage prior to proceeding the chemical mechanical polishing.
Patent TW-463211-B (TW)
Title: Process system
Inventor: UEDA KAZUNARI
IPC: B65G49/07
Filed: 2000-03-24
Granted: 2001-11-11
Abstract: This invention provides a process system for the formation of photoresist layer on a semiconductor wafer and development and exposure processes of the photoresist layer. Its constitution means is: a process unit block is disposed at the rear portion on one side of a process station. The process unit block has multi-staged heating and cooling process units. A transferring table is disposed at a center portion of the other side of the process station. Process units are disposed at an upper front portion of the process station. A vertical type conveying unit is disposed at a nearly center portion of the process station. Since a plurality of process stations that have the same structure are connected, the system can be dynamically and effectively expanded or reduced.