baber/WOPTO huggingface dataset:
Patent JP-S6198033-A (JP)
Title: Optical radio device for moving body
Inventor: KAMIMURA HIROSHI
IPC: H04B10/00
Filed: 1984-10-19
Abstract: PURPOSE:To realize optical radio transmission between a fixed station and a moving body with high reliability and low power consumption by monitoring the reception level of the photodetecting element at the moving body side and estimating the position of the fixed station, and turning on only a light emitting element which faces the station. CONSTITUTION:Received signals outputted by PIN photodiodes (PD) 1-3 of a photodetecting and light emitting means 7 are inputted to amplifiers 21-23 with an AGC function. Those amplifiers convert them into voltages and impose FSK modulation to output signals L1-L3. A PD/LED selecting circuit 40, on the other hand, measures voltages of the signals L1-L3 to select one highest- voltage or plural higher-voltage signals, thereby controlling a switch 20. Therefore, only large output signals of PDs are inputted to a buffer amplifier 41 and received by a digital transmitter 45 through a demodulator 42. At this time, PDs having large outputs face the fixed station, so the selecting circuit 40 controls a switch 30 as well at the same time to turn on corresponding light emitting diodes LEDs.
Patent JP-H1062538-A (JP)
Title: Sound ray calculator
Inventor: NAKANO IWAO
IPC: G01S7/52
Filed: 1996-08-20
Abstract: PROBLEM TO BE SOLVED: To reduce the quantity of calculation in a sound ray calculator. SOLUTION: In sound velocity and sound velocity fine coefficient calculation processors 16, an average sound velocity, a fine coefficient of the average sound velocity, EOF and a fine coefficient of the EOF at the position of a sound source are calculated by linear interpolation using data of an average sound velocity vertical distribution table b1 generated by a vertical table generation processor 14, a fine coefficient table b2 of the average sound velocity vertical distribution, an empirical orthogonal function(EOF) group table b3 and a fine coefficient table b4 of the EOF group. Moreover, the sound velocity at the sound source position, a horizontal sound velocity fine coefficient at the sound source position and a vertical sound velocity fine coefficient at the sound source position are calculated.  The propagation time, arrival depth and passing bearing are calculated by a one step calculation processor 17 in the sound rays at a position 100m ahead horizontally from the sound position. The same calculation is performed with the position 100m ahead as sound source position. The information (c) on the sound rays is calculated up to the position of a receiver by repeating this operation.
Patent JP-S6462263-A (JP)
Title: Molten metal feeding device for vacuum die casting
Inventor: UMEMURA AKIYOSHI
IPC: B22D17/30
Filed: 1987-09-01
Abstract: PURPOSE:To eliminate the defect of a blowhole and to improve a quality by reducing the pressure of the cavity inside of a die by a vacuum suction device. CONSTITUTION:When a vacuum suction device 3 and vacuum chamber 8 are subjected to a pressure reduction by a vacuum pump 10, the pressures of the vacuum chamber 8, vacuum suction device 3, plunger sleeve 4 inside and the cavity 2 inside of a die 1 are reduced. With the pressure reduction of the inside of the vacuum suction device 3, a molten metal is sucked from a holding furnace 11 by the pressure difference of the vacuum suction device 3 and holding furnace 11, and filled up inside the plunger sleeve 4 by passing a feeding sprue 5. The flexible part 6 of a feeding pipe 7 is pressed by the molten metal control part 9 inside the vacuum chamber 8 where the molten metal became of the necessary amt. to regulate the molten metal. The molten metal filled up inside the plunger sleeve 4 is charged by its pressure fitting into the cavity 2 of the die 1 with the necessary pressure by a plunger 12 and 6 product is obtd. The blow hole detect is eliminated by a simple structure and stage and the quality can thus be improved.
Patent JP-H05211347-A (JP)
Title: Gallium nitride compound semiconductor light-emitting element
Inventor: KOTAKI MASAHIRO
IPC: H01L29/45
Filed: 1992-07-23
Abstract: PURPOSE:To change a light emission pattern at the blue luminous region of a GaN compound semiconductor light-emitting diode close to a surface light emission from a point light emission and to improve the luminous intensity of the diode. CONSTITUTION:An electrode 80 to a high-carrier concentration n<+> layer 3 and an electrode 70 to a high-impurity concentration iH layer 52 are provided. The electrodes 70 and 80 are respectively constituted of first Ni layers 71 and 81 of a thickness of 100Angstrom , second Ni layers 72 and 82 of a thickness of 1000Angstrom , Al layers 73 and 83 of a thickness of 1500Angstrom , Ti layers 74 and 84 of a thickness of 1000Angstrom  and third Ni layers 75 and 85 of a thickness of 2500Angstrom . As the Ni layers are formed into a double structure, relaxation layers can be respectively formed between the Ni layers and the Ni layers can be prevented from being peeled. As a result of joining GaN with the Ni layers, the threshold voltage at the time of light emission of a GaN compound semiconductor light-emitting diode is reduced and at the same time, the luminous luminance of the diode is improved. Moreover, a light emission pattern at the blue luminous region of the diode can be brought close to a surface light emission from a point light emission and the luminous intensity of the whole diode is improved.
Patent JP-H0961595-A (JP)
Title: Radioactive waste storage and disposal facility and geological disposal method for radioactive waste using the facility
Inventor: SAKATANI TADATSUGU
IPC: G21F9/36
Filed: 1995-08-28
Abstract: PROBLEM TO BE SOLVED: To make radioactive waste capable of geological disposal after storing the radioactive waste for cooling until the decay heat is removed. SOLUTION: The facility is provided with a sealed vessel storage room 1 formed inside an underground bedrock 3, a sealed vessel conveying shaft 10 extending from the ground surface 2 to the upper part of the sealed vessel storage room 1, an air intake shaft 14 extending from the ground surface 2 to the lower part of the sealed vessel storage room 1, an exhaust shaft 15 extending from the upper part of the sealed vessel storage room 1 to the ground surface 2, a vessel support member 18 and frame members 19 for suspending and supporting a plurality of radioactive waste sealing vessels 4 in which the radioactive waste is sealed, inside the sealed vessel storage room 1, an air supply tower 16 for supplying the air intake shaft 14 with air and an exhaust tower 17 for exhausting air through the exhaust shaft 15.
Patent JP-H0770342-A (JP)
Title: Production of surface-coated plastic molding
Inventor: FUKUSHIMA HIROSHI
IPC: C08J7/00
Filed: 1993-09-02
Abstract: PURPOSE:To obtain a coated plastic molding free from yellowing and excellent in wearing resistance, impact resistance, etc., by irradiating the surface of a plastic molding with ultraviolet rays in a given dose, applying a silicon-based coating material thereon, and curing it. CONSTITUTION:The surface of a plastic molding [e.g. a poly(methyl methacrylate) molding] is irradiated with ultraviolet rays having a wave length of 200-400nm in a dose of 500-2,000mJ/cm<2>. A silicon-based coating composition is then applied to the surface and cured to form a coating film. Thus, a coated plastic molding is obtained. A preferred example of the composition comprises an organosilicon compound represented by the formula wherein R<1> and R<2> each is a hydrocarbon group having a substituent, e.g. an alkyl, an ester, or an alkenyl; X is a hydrolyzable group; and a and b each is 0 or 1 (e.g. vinyltriethoxysilane), ultrafine silica particles, and a hardener.
Patent JP-H0555268-A (JP)
Title: Manufacture of semiconductor device
Inventor: SUZUKI YASUYUKI
IPC: H01L29/201
Filed: 1991-08-29
Abstract: PURPOSE:To improve the uniformity of a threshold voltage and the characteristics of a Schottky gate by a method wherein a fluoride, which is produced when a GaAs layer is selectively etched using the mixed gas containing chlorine gas and fluorine gas, is removed with a water solution containing a hydro-fluoric acid. CONSTITUTION:A high-concentration GaAs layer 2, an Si-doped N-type AlGaAs layer 3 and an Si-doped N<+> GaAs layer 4 are grown in order on a semi- insulative GaAs substrate 1 by an MBE method. Then, 11B<+> is ion implanted to perform an element isolation and thereafter, ohmic electrodes 5 consisting of an AuGe/Ni layer are formed. Then, the layer 4 located at a scheduled gate region is etched by a selective etching using CCl2F2 gas using a resist 6 as a mask to form a recess. At this time, an AlF3 8 produced in the surface of the layer 3 is selectively removed using an ammonium fluoride solution containing a hydrofluoric acid.
Patent JP-2000052065-A (JP)
Title: Extruding mold jointing method and extruding mold
Inventor: KUMAGAI MASAKI
IPC: B23K20/24
Filed: 1998-08-03
Abstract: PROBLEM TO BE SOLVED: To obtain an extruding mold jointing method wherein the extruding mold is friction bonded while a joint face is pressed to a proper extent. SOLUTION: Protrusions 16-19 protruding in a thickness direction along joint faces 12, 14 are extrusion formed on both front and back sides of extruding molds 1, 2. At that time, inclined faces 20-23 are extruded to the protrusions 16-19 at the opposite side to the joint faces 12, 14, and both of the joint faces 12, 14 are butted while the inclined faces 20-23 are pressed by rollers 24-27. Probes 28, 30 are inserted between the joint faces 12, 14 and friction bonded. The protrusions 16-19 are cut by a cutting blade moving in a manner to follow up immediately after the probes 28 and 30.
Patent JP-S6373413-A (JP)
Title: Stylus pen
Inventor: IKEDA MAMORU
IPC: G06F3/03
Filed: 1986-09-17
Abstract: PURPOSE:To facilitate operations of a stylus pen by tilting freely the pen point with the tip part of the pen main body defined as a fulcrum. CONSTITUTION:A stylus pen main body 1 has a hollow rod structure and has a constricted part 7 at its tip. A recess part 4a formed at the approximately center part of a pen point 4 is fitted at the part 7 of the main body 7. Thus the pen point 4 is supported with its tip side projected and its rear end side set into the main body 1. Under such conditions, the point 4 can be titled in any direction with the hooked part between the part 7 and the part 4a defined as a fulcrum. An electrode 2 is provided at the outer circumference of the rear end part of the point 4. In addition, an electrode 3 is provided opposite to the electrode 2 as it surrounded the electrode 2 formed inside the pen 1. A control spring 5 is also provided into the pen 1 to support the rear end of the point 4.
Patent JP-S59108477-A (JP)
Title: Image pickup device
Inventor: MOCHIZUKI NORITAKA
IPC: H04N5/335
Filed: 1982-12-13
Abstract: PURPOSE:To attain easily high performance and resolution without using a highly integrated circuit element by providing a scanning picture light deflecting means having an angle selectivity to deflect the luminous flux passing through an image forming optical system. CONSTITUTION:The luminous flux from each point on X-Y coordinate of an object O is made incident in time series to a photoelectric converting element S by the operation of an X direction optical deflecting device MX and a Y direction optical deflecting device MY having the angle selectivity in the X and Y directions respectively. The optical deflection in the X direction (horizontal direction) and Y direction (vertical direction) is performed two-dimensionally under a prescribed relation of synchronism by the operation of a control circuit C. In this case, the number of the photoelectric converting element used is one at most and the number of constituting cells is the number of color signals required, then the limitation of the element plane required conventionally is releaved and high performance and resolution are realized.
Patent JP-H0884035-A (JP)
Title: Arithmetical amplifier with limiter
Inventor: ITO MAKOTO
IPC: H03G11/00
Filed: 1994-09-13
Abstract: PURPOSE: To obtain a amplifier which is comparatively small in circuit scale, suitable for making into monolithic IC and has an excellent limit characteristic. CONSTITUTION: This arithmetical amplifier with limiter has feedback impedance Zf between the input/output terminals of an operational amplifier A. Between the input/output terminals of the arithmetical amplifier A, the parallel circuit of a first PNP transistor QP1 and a first NPN transistor QN1 is connected. A reference voltage source 2 impresses positive reference voltage VH' of the almost equal value to (VH-VBE1) which is obtained by subtracting voltage VBE1 between the base/emitter voltage VBE1 of the first PNP transistor QP1 from positive limit voltage VH on the base of the first PNP transistor QP1.  On the other hand, negative reference voltage VL' of the almost equal value to (VL+VBE1') which is obtained by adding voltage VBE1' between the base/ emitter of the first NPN transistor QN1 to negative limit voltage VL is impressed on the base of the first NPN transistor QN1 by the partial pressure by each resistance R1, R2 and R3.
Patent JP-H06100391-A (JP)
Title: Method for fermentation treatment of squeezed lees of coffee bean
Inventor: KANKE KEISUKE
IPC: C09K101/00
Filed: 1992-08-18
Abstract: PURPOSE:To rapidly obtain a fermented material having high full-ripe degree without develop ing miscellaneous organisms such as mushroom by combining an initial heating process with a treating process in a chamber and primary and secondary fermentation treatment processes. CONSTITUTION:Squeezed lees of coffee beans are charged into a fermentation tank and stirred and heated while supplying water into the tank. Thereby, the outer shell of the squeezed lees is expanded and softened to enhance permeability of primary fermentation and oil and fat inhibiting fermentation in squeezed lees is thermally decomposed. A large quantity of air is fed into the fermentation tank to cool the interior of the tank and a primary fermentation bacterium is charged in a prescribed ratio together with a fermentation promotor and then these materials are stirred while keeping optimum temperature of fermentation. Stirring and heating are stopped and the mixed treated material is blocked from the outside and treatment in a chamber is carried out for a prescribed time to rapidly proliferate the primary fermented bacterium. The mixed treated material is stirred and kept to the optimum temperature of fermentation while supply water and primary fermentation is carried out under these conditions to provide the intermediate fermentation treated material. A secondary fermentation bacterium having effects capable of suppressing the occurrence of miscellaneous organisms is added thereto and kept to the optimum temperature of fermentation. Thereby, full-ripe fermented material is obtained without developing miscellaneous germs, etc.
Patent JP-S6196794-A (JP)
Inventor: MATSUMURA KOZO
IPC: H05K3/06
Filed: 1984-10-17
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。
Patent JP-S6197784-A (JP)
Title: Picture information retrieving device
Inventor: WATAYA MASAFUMI
IPC: G06F17/30
Filed: 1984-10-18
Abstract: PURPOSE:To make the operation easy by adding an automatic page turning function when picture information over plural pages is retrieved. CONSTITUTION:When an indication 'automatic page turning' is sent from a keyboard 53, a change-over switch 63 is switched to the second VRAM62 by a change-over control circuit 80 while picture information preserved to the first VRAM61 is read. The second page picture information is written from a light disk to the second VRAM62. Thus, when the new picture information is written to VRAM61 or 62, switches 63 and 64 are changed over, a page turning action is automatically executed, but, the page turning time (display device for one page) can be optionally set by using the keyboard 53.
Patent JP-S6279612-A (JP)
Title: Manufacture of semiconductor device
Inventor: NAGATOMO MASAO
IPC: H01L21/20
Filed: 1985-10-02
Abstract: PURPOSE:To form single crystal layers, having the same degree of crystallization as a single crystal substrate, on an insulating film formed on the substrate, by removing oxidizing film layers formed by heat treatment of oxygen atom- implanted layers formed in the substrate, to draw out a single crystal thin film and put it on the insulating film and then perform heat treatment. CONSTITUTION:A plurality of layers of oxygen atom-implanted layers 2 are formed in fixed intervals, by performing ion implantation of oxygen atoms on a single crystal silicon substrate 1 with implantation energy changed. While damage caused by implantation is removed by performing heat treatment of the single crystal silicon substrate 1, oxygen atom-implanted layers 2 are made to become oxidizing film layers 3. Then, the oxidizing film layers 3 are removed by etching to draw out single crystal thin films 4. And, after the drawn-out single crystal thin film 4 is put on an insulating film 6 formed on the single crystal silicon substrate 5, the single crystal thin film 4 is closely attached to the insulating film 6 by heat treatment. Hence, the single crystal layer similar to the substrate is formed on the insulating film stably formed on the substrate.
Patent JP-2001043562-A (JP)
Title: Manufacture of optical information recording medium and manufacturing device for optical information recording medium
Inventor: MASUHARA SHIN
IPC: G11B7/1392
Filed: 1999-08-03
Abstract: PROBLEM TO BE SOLVED: To constitute a laser beam source by means of a semiconductor laser and to expose a master disk or the like with high accuracy by arranging the chromatic aberration correcting optical system correcting the chromatic aberration of an ojective lens to an exposing laser beam. SOLUTION: An exposing laser beam LR emitted from the light source unit 51 having a semiconductor laser is emitted to a dichroic mirror 47 via a chromatic aberration correcting optical system 78 and a beam expander 79 by the optical system 44 of an exposing laser beam. Hereupon, the chromatic aberration correcting optical system 78 is composed of the optical system imparting the chromatic aberration to the exposing laser beam LR so as to negate the chromatic aberration. The optical system imparting the chromatic aberration is composed by arranging spaced-apart by the prescribed distance two set of lenses 78A and 78B wherein the convex lens made of crown glass having a positive refractive index is respectively stuck to the concave lens made of flint glass having a high negative refractive index.
Patent JP-H0266678-A (JP)
Title: Picture signal processor
Inventor: MUKAI HACHIRO
IPC: G06T1/00
Filed: 1988-08-31
Abstract: PURPOSE:To easily process the picture signal in a simple constitution by selecting the desired one out of those attribute data on plural analog picture signals set previously and processing these picture signals based on the selected attribute data. CONSTITUTION:For instance, the channel number CH of a picture signal source 12a is set at 0. In this case, the attribute data on the sampling frequency P, the horizontal fetch period tH, and the vertical fetch period tV corresponding to the channel 0 are stored in a table memory 34. The video signal Sa received from the source 12a is inputted to a D/A converter 22 via an electronic switch 18. The converter 22 converts the signal Sa into a digital signal with the prescribed sampling frequency P and sent to a frame memory 38 for each screen as the digital picture data. This picture data is processed and led into a picture output device 16. Then a picture serving as a desired hard copy is outputted onto a film F based on the digital picture data.
Patent JP-S6198098-A (JP)
Title: Dynamic speaker
Inventor: YUKIYOSHI ATSUSHI
IPC: H04R9/02
Filed: 1984-10-19
Abstract: PURPOSE:To prevent magnetic disturbance to other equipment by providing a damper metallic fixture made of a magnetic material with high magnetic permeability to the entire or part of the periphery of the damper sticking part of an iron-made frame, and converging lines of magnetic force extending to before a diaphragm. CONSTITUTION:The outer periphery of the damper metallic fixture 13 is allowed to contact the iron-made frame 5 of a speaker, and a damper 8 is clamped between the frame 5 and damper metallic presser 13 at the damper sticking part 5a. The damper metallic pressure 13 is formed of a material with high magnetic permeability such as an iron plate, silicon steel plate, and 'Permalloy(R)'. Magnetic flux from the iron-made frame is converged to form a return path to a plate 4. Consequently, leak magnetic flux to the front surface of the speaker is reduced to prevent magnetic distrubance to other electronic equipment.
Patent JP-H0768425-A (JP)
Title: Manufacture of diamond-coated tool
Inventor: KURIHARA KAZUAKI
IPC: C23C16/26
Filed: 1993-09-03
Abstract: PURPOSE:To provide a method of manufacture of a diamond-coated tool, which is capable of enhancing more the adhesive properties of a gaseous phase synthetic diamond film coated on the surface of cermet, etc. CONSTITUTION:This is a method of manufacturing a diamond-coated tool, in which a diamond film 15 is coated on the surface of a base body composed of dispersed grains consisting of metal-carbides, metal-nitrides, or a mixture of those, and a metal matrix 12. Further, the dispersed grains are composed of coarse grains 13 and fine grains 14, and after the metal matrix 12 and the fine dispersed grains 14 on the surface layer of the base body 11 are removed to form irregularities on the surface of the base body, the diamond film 15 is formed. The adhesive properties of the diamond film 15 is thus enhanced by an anchor-effect.
Patent JP-S6476942-A (JP)
Title: Hydroxyapatite pottery material and production thereof
Inventor: NAGAI HIROSHI
IPC: C01B25/32
Filed: 1988-09-02
Abstract: PURPOSE:To obtain the titled pottery material of high purity and high density with outstanding thermal stability, by reaction between water and CaO which was produced by thermal decomposition of high-purity CaCO3 powder under an inert atmosphere followed by reaction of the resulting Ca(OH)2 suspension with phosphoric acid. CONSTITUTION:Lime (CaO) produced by thermal decomposition of CaCO3 powder with a purity of >=99.8% in an inert atmosphere at 800-1,300 deg.C for 0.5-10hr is cooled to 500 deg.C or lower in an inert atmosphere followed by addition of 10-100pts.wt. per pt.wt. of CaO of water and carrying out reaction at 0-80 deg.C for 1-24hr while stirring at high speed to prepare a milky Ca(OH)2 suspension with an average particle size of 0.05-1mum. Thence, this suspension is allowed to react with an aqueous phosphoric acid solution of a concentration of 1-10wt.% in one inert atmosphere at 0-50 deg.C for 0.5-200hr to produce hydroxyapatite. This hydroxyapatite is filtered and dried followed by pressurized forming and calcining at 850-1,400 deg.C for 0.5-5hr, thus obtaining the objective hydroxyapatite pottery material with an element ratio Ca/P of 1.67-1.69, average crystal diameter of 4-20mum and density of 3.14-3.16g/cm<3>. This hydroxyapatite pottery material is such that the formation of whitlockite cannot be observed even if calcined at 1,350 deg.C for 1hr.