baber/WOPTO huggingface dataset:
Patent TW-371784-B (TW)
Title: Method for fabricating semiconductor device
Inventor: YAMAZAKI SHUNPEI
IPC: H01L21/335
Filed: 1994-02-18
Granted: 1999-10-11
Abstract: A method for fabricating semiconductor device such as thin film transistors by annealing a substantially amorphous silicon film at a temperature either lower than normal crystallization temperature of amorphous silicon or lower than the glass transistor point of the substrate so as to crystalline the silicon film. Islands, stripes, lines, or dots of nickel, iron, cobalt, or platinum, silicide, acetate, or nitrate of nickel, iron, cobalt, or platinum, film containing various salts, particles or clusters containing at least one of nickel, iron, cobalt, and platinum are used as starting materials for crystallization. These materials are formed on or under the amorphous silicon film.
Patent TW-252918-B (TW)
IPC: A61K31/665
Filed: 1994-02-19
Granted: 1995-08-01
Abstract: This invention relates to a lipid metabolism improving medicinal composition containing a phosphoric acid diester compound of the formula or a pharmacologically acceptable salt thereof. <CHEM> wherein R1 and R2 are the same or different and each represents a hydrogen atom or a methyl group.
Patent TW-372236-B (TW)
Title: The preparation for polyhydroxymethyl and polyformyl derivatives of polythiophene
Inventor: CHANG CHING-TE
IPC: C07D409/00
Filed: 1994-11-10
Granted: 1999-10-21
Abstract: The present invention relates to a preparing method for polyhydroxymethyl and polyformyl derivatives of polythiophene which can be used as medicine. The method comprises the steps of reacting a halide of mono-, bi, or ter-thiophene with a halide of mono-thiophene under the presence of bis (triphenyl phosphine) palladium (II) chloride to carry out Grignard-Wurtz condensation to produce polyhydroxymethyl and polyformyl derivatives of polythiophene.
Patent TW-280818-B (TW)
IPC: C07D277/04
Filed: 1994-11-24
Granted: 1996-07-11
Abstract: The present invention relates to compounds of formula 1,    <IMAGE>  Formula 1  including all of its stereoisomers, compositions, and processes for preparation of the same. The compounds of the present invention are also useful in their pharmacological activities as they directly act as inhibitors of prolyl endopeptidase and thereby provide a methods for memory enhancement, preventing or slowing the affects of amnesia or memory deficits.
Patent TW-287178-B (TW)
Title: Verfahren zur Hestellung von Organyloxygruppen aufweisenden Organopolysiloxanen
Inventor: DR MICHAEL STEPP
IPC: C08G77/06
Filed: 1995-01-14
Granted: 1996-10-01
Abstract: Verfahren zur Herstellung von Organopolysiloxanen, die min-destens eine Einheit der Formel (R1O)3-mRmSiO1/2 (I) enthalten, worin R, R1 und m die in Anspruch 1 angegebene Bedeutung haben, dadurch gekennzeichnet, dab in einem 1. Schritt Organosiliciumberbindungen (1), die mindestens eine Si-ge- bundene Hydroxylgruppe aufweisen, mit mindestens einem Silan (2) der Formel (R1O)4-mSiRm (II) und/oder dessen Teilhydrolysate, wobei, R, R1 und m die obengenannte Bedeutung hat, in Gegenwart von Fluoridsalz (3) umgesetzt wird und gegebe-nenfalls in einem 2. Schritt nach beendeter Umsetzung Komponente (4), welche Fluoridionen binden kann, zugesetzt wird.
Patent TW-275590-B (TW)
Title: Head mounted display and system for use therefor
Inventor: TOZAKI KENJI
IPC: A63F9/24
Filed: 1995-04-19
Granted: 1996-05-11
Abstract: A head mounted display, characterized by comprising: a see-through type display device for showing off particular images with nature light; a frame of mounting the see-through display device on the front portion of HMD; and a pivotal visor adapted to the front opening of the display device for reducing the intensity of nature light on illumining the display device.
Patent TW-313713-B (TW)
Title: Multi-in-one burst absorber and manufacturing method thereof
Inventor: HORNG JIUANN-YUH
IPC: H02H7/20
Filed: 1995-04-19
Granted: 1997-08-21
Abstract: A Multi-in-one burst absorber comprises of: (1) one conductive layer; (2) one first electrode layer set on one side of the conductive layer; (3) multiple second electrode layers set on another side of the conductive layer; in which the shortest distance between any two of the multiple second electrode layers is twice larger than the conductive layer width, making the first electrode layer, the conductive layer and each one of the second electrode layer, and between any two of the second electrode layer and the conductive layer be able to form one single burst absorber, so as to form single burst absorber equivalent to multiple ones on the single conductivelayer.
Patent TW-347440-B (TW)
Title: Reciprocating air operated pump, pump for handling fluids and attachment to fluid lines, air operated diaphragm pump, and check valve
Inventor: FEITEL ANN C
IPC: F04B35/00
Filed: 1996-04-20
Granted: 1998-12-11
Abstract: In a reciprocating air operated pump having pumping elements which reciprocate along a first axis, an air valve comprising: a valve carriage moveable along a second axis normal to the first axis; a valve block moveable in the valve carriage along the first axis; a valve surface comprising first and second main ports; first and second pilot ports and an exhaust port; means for causing the valve block to move as the pumping elements move; and means for supplying compressed air over the valve surface and in which the valve block moves in a generally planar rectangular path between four positions, in which in each of the positions, the valve block connects a main port, a pilot port and the exhaust port.
Patent TW-376389-B (TW)
Title: Selectively hydrogenated symmetrical linear block copolymers comprising blocks derived from polar vinyl monomer and process for their manufacture
Inventor: DUBOIS PHILIPPE
IPC: C08F4/48
Filed: 1996-06-12
Granted: 1999-12-11
Abstract: Symmetrical linear block copolymers of the formulae C-A-B-A-C or C-B-C, wherein the B blocks represent poly(predominantly conjugated diene) blocks, which have been selectively hydrogenated until a degree of residual unsaturation (RU) of ≤ 20%, and preferably ≤ 5%, and wherein the vinyl content in the precursor copolymer is in the range of from 20 to 45 mol % relative to the originally present conjugated diene, wherein the A blocks represent only (predominantly monovinyl aromatic) blocks, and wherein the C blocks represent poly (predominantly polar vinyl compound) blocks, representing a bound weight fraction, relative to the weight of the total block copolymer of ≤ 30 wt%, the molecular weight distribution of the total linear block copolymers being ≤ 1.20; intermediate precursor block copolymers; and process for their preparation. Symmetrical linear block copolymers of the formulae C-A-B-A-C or C-B-C, wherein the A blocks represent poly (predominantly monovinyl aromatic) blocks; the B blocks represent poly (predominantly conjugated diene) blocks which have been selectively hydrogenated; and the C blocks represent poly (predominantly polar vinyl compound) blocks, said C blocks representing a bound weight fraction, relative to the weight of the total block copolymer of ≤ 30 wt%; characterized in that the vinyl content in the precursor copolymer of the B blocks is in the range of from 20 to 45 mol % relative to the originally present conjugated diene, and the molecular weight distribution of the total linear block copolymers is ≤ 1.20.
Patent TW-381331-B (TW)
Title: Manufacturing method for integrated circuit conductive plugs avoiding the generation of voids
Inventor: JIANG SHING-SHING
IPC: H01L21/768
Filed: 1996-06-17
Granted: 2000-02-01
Abstract: The present invention provides a kind of manufacturing method for integrated circuit conductive plugs which can avoid the generation of voids by eliminating overhang phenomenon. The manufacturing method includes the following steps: providing a silicon substrate, formed with transistors including gate and source/drain; forming a dielectric on the silicon substrate; etching the dielectric for forming a contact window and exposing one of the source/drain; forming the first diffusion barrier at the bottom and sidewall of contact window and extending to the top of said dielectric; coating a photoresist layer for fill up the contact window and covering the surface of the first diffusion barrier; proceeding isometric etching to etch part of the photoresist layer and the first diffusion barrier for exposing the dielectric and making the height of each said layers filled into the contact window be lower than the upper surface of said dielectric for exposing the sidewall on the upper part of the contact window; removing the residual of photoresist layer; forming a second diffusion barrier on the exposed upper sidewall of contact window which is extended to cover the dielectric; and, forming a conductive layer to fill up the contact window for forming a conductive plug.
Patent TW-336213-B (TW)
Title: A semiconductor test device and a semiconductor element testing system with a plurality of semiconductor element test devices
Inventor: KOBAYASHI YOSHIHITO
IPC: G01R31/28
Filed: 1996-08-06
Granted: 1998-07-11
Abstract: A semiconductor test system, including mainly: semiconductor test device having a test device and processor, housing of data memory and sorting device in the carrier of the processor, for delivery and carrying of a plurality of semiconductor elements in test from the common tray onto the test tray, for carrying said test tray to the tester in the processor, for the semiconductor elements on the test tray and the test heads disposed on said test device of said test unit having the test heads generate electric contact for test to said semiconductor elements and, after the test, removing the test tray carrying semiconductors undergoing test from the download unit of the processor and in the download unit, the semiconductor elements after undergoing test in said test tray being moved onto the common tray, while removing from the processor the common tray carrying the semiconductors having undergone test, featuring: in said download unit, the semiconductors after undergoing the test in the test tray and being moved to the common tray, when each time the semiconductor elements after undergoing test being housed on the common trays, the code, the test result of the semiconductors and the housing data of the outlet number semiconductors be memoried in the memory of said housing data memory, which is then fed to the sorting unit, which will, based on the test result given above, sort the semiconductors after undergoing the test.
Patent TW-425305-B (TW)
Title: Cu/Cr methanol decomposition catalysts containing alkali metals
Inventor: JENG WU-SHUEN
IPC: B01J23/26
Filed: 1996-10-05
Granted: 2001-03-11
Abstract: The activity and selectivities to CO and H2 of Cu/Cr containing catalysts in methanol decomposition can be enhanced by adding alkali metals to the catalysts.
Patent TW-438991-B (TW)
Title: Manufacturing method of thin film device, active matrix substrate, liquid crystal display device, active matrix substrate and the preventive method of static charge destruction of an active device in LCD
Inventor: SATOU TAKASHI
IPC: G02F1/1362
Filed: 1996-10-15
Granted: 2001-06-07
Abstract: The present invention relates to a novel manufacturing method of amorphous silicon thin film transistors with reduced process and having the interleaved construction, and the active matrix substrate having static charge protection means, which is made by this manufacturing method, and a LCD liquid crystal display device which utilizes the substrate. In a thin film transistor manufacturing process, along with forming an aperture for connecting the contact hole and the external terminal in a manufacturing process for a thin film transistor, utilization is made of ITO film as the wiring. The electrostatic protection means is formed from a bi-directional diode (electrostatic protection element) which is composed utilizing a MOS transistor connected between the electrode for connecting the external terminal and the joint electric potential line. The electrostatic protection element is substantially a transistor with large current capacity, and utilizing the TFT formation process of pixel components in their existent state, the process can be formed without any complications.
Patent TW-326531-B (TW)
Title: Multi-state nonvolatile semiconductor memory device
Inventor: YOUNG-JOON CHOI
IPC: G11C16/06
Filed: 1996-11-28
Granted: 1998-02-11
Abstract: A multi-state nonvolatile memory device, composing of memory units in which has a source area, a drain area, a control gate, and a floating gate for imposing a specific voltage to read, program, verify and erase unit data in each unit, and store a multi-state programming charge in single floating gate, includes: 1) the first circuit - connected with a bit line of selected memory units for determining the current of selected memory units, whether being larger or lower than the preset value, to store programming data in a temporary storage unit; 2) the second circuit - connected with the bit line to determine whether to execute programming operation by the information of the first circuit; 3) the third circuit - connected with the first and second circuit to transfer the first unit output to a bite format; 4) the fourth circuit - connected with selected memory units to generate a reference voltage by the state of selected units; 5) the fifth circuit - connected with both bit line and the fourth circuit for verifying the state of the programmed unit to control the fourth circuit.
Patent TW-327716-B (TW)
Title: Method and device for selective data transmission in traffic communication systems
Inventor: ROLF BACHTIGER
IPC: B61L3/22
Filed: 1997-05-05
Granted: 1998-03-01
Abstract: A method is provided for traffic communication systems which have, at least, one ground-based transponder(TP) for each associated traffic path, by means of which initial information can be transmitted to a first transmission path with onboard interrogators by means of which it is determined in the respective interrogator whether the second information transmitted to the interrogator on a second transmission path actually designated for the vehicle, while the signal for vehicles associated with a designated traffic path can be modulated individually or transmitted according to the time-division or frequency-division multiplex method. According to the selected modulation or multiplexing, transmission coefficients are produced, transmitted via the first transmission path, extracted on the receiving end, and used for the demodulation or demultiplexing of the signal transmitted in the second transmission path. It can be determined from the physical separation of the transmitted signals whether the signal received in the second transmission path is designated for this traffic path or the vehicle travelling thereon.
Patent TW-379506-B (TW)
Title: TV picture scrambling/unscrambling method
Inventor: YANG TZENG-WEI
IPC: H04N7/167
Filed: 1997-05-20
Granted: 2000-01-11
Abstract: Provided is a kind of TV picture scrambling/unscrambling method. Scrambling signals are completely or partially added to a certain fields of the TV picture signals to obtain scrambling effect by using the characteristics of TV picture interval field rapid display. By using the photo switch liquid crystal spectacles controlled by the scrambled picture signal for observation of the scrambled TV picture signal, the liquid crystal spectacle is opened when the signals are not scrambled and closed when the signals are scrambled. Therefore, the viewer will not see scrambled TV pictures through the liquid crystal spectacles, thus achieving the objective of unscrambling.
Patent TW-360547-B (TW)
Title: Hybrid tubular guide wire for catheters
Inventor: JACOBSEN STEPHEN C
IPC: A61L29/00
Filed: 1997-05-23
Granted: 1999-06-11
Abstract: A hybrid tubular wire includes first and second elongate tubular bodies, fitted end to end, and about which a catheter may be threaded for guidance to a target location in a vasculature passageway of a body. The first elongate body has greater rotational stiffness than the second elongate body, which has greater lateral flexibility. Cuts are formed either by saw-cutting, laser cutting or etching at spaced-apart locations along the length of the second elongate body to increase its lateral flexibility. At least some of the cuts extend through the tubular body to the interior cavity to allow the escape of fluids flowing in the cavity.
Patent TW-344695-B (TW)
Title: Method for polishing semiconductor substrate
Inventor: NISHIO MIKIO
IPC: B24B9/02
Filed: 1996-06-29
Granted: 1998-11-11
Abstract: A method for polishing a semiconductor substrate, which is characterized in comprising: an abrasive supply process for supplying an abrasive to an elastic polishing pad disposed on the flat surface of a platen having a flat surface conducting a two-dimensional movement; a substrate polishing process for pressing a semiconductor substrate against a circular first region of the polishing pad, while polishing the substrate; and a pad pressing process for pressing a second region of the polishing pad to cause elastic deformation thereof.
Patent TW-367404-B (TW)
Title: Automatic ice maker for refrigerator
Inventor: UENO SHUNJI
IPC: F25D13/00
Filed: 1997-12-30
Granted: 1999-08-21
Abstract: The subject of this invention is that for the automatic ice make of refrigerator, the ice can be made by automatic water feeding from the water tank to the ice making container. After the ice is made, the container is reversed to detach the ice for the automatic ice making. When the water is fed into the empty water tank and proceeds the water feeding process, there will be excessive water stored in the ice making container. In order to solve the problem, the invented method is that when the water is fed into empty water tank and set the water tank at specified level, the opening time of water feeding valve of water tank is shorted than the normal state. By this method, because the water from water tank is less than normal state, even the residual water in the container and some water in the container, it can prevent the excessive amount of water in the water making container in order to prevent the connection of ice blocks and becoming plated ice.
Patent TW-469606-B (TW)
Title: Semiconductor package structures using epoxy molding compound pads and a method for fabricating the epoxy molding compound pads
Inventor: NAM SHI-BAEK
IPC: H01L25/18
Filed: 1998-04-07
Granted: 2001-12-21
Abstract: A semiconductor package wherein a controlling IC is attached to a die pad using an epoxy molding compound (EMC) pad is disclosed. The EMC pad is formed to be little larger than the controlling IC. The EMC pad is formed in a wafer shape having a thickness of approximately 0.3 mm and a diameter of approximately 100 mm. A method for fabricating the EMC pad is also disclosed. According to the present invention, even a thin EMC pad is capable of ensuring an enough dielectric strength. It is also possible to manufacture semiconductor packages at lower cost. In addition, conventional equipments can be used to fabricate the semiconductor packages. The packages fabricated as aforementioned has an elasticity. Therefore, even a thin package may not be easily broken.
Patent TW-559559-B (TW)
Title: Dentifrice for the treatment of dentinal hypersensitivity having limited astringency
Inventor: FISHER STEVEN W
IPC: A61K8/21
Filed: 1998-05-14
Granted: 2003-11-01
Abstract: A two component desensitizing dentifrice composition is disclosed which comprises a first dentifrice component containing a desensitizing potassium salt such as potassium nitrate and a second dentifrice component containing a stannous salt desensitizing agent such as SnF2, the first and second dentifrice components being maintained separate form the other until dispensed for application to teeth requiring relief from dentine hypersensitivity, at least on of the dentifrice components containing the oxyethylated reaction product of hydrogenated castor oil to reduce astringency when the combined product is used by consumers.
Patent TW-408080-B (TW)
Title: Improvement in a pump body and process of manufacture
Inventor: BOUGAMONT JEAN-LOUIS
IPC: F16K15/04
Filed: 1998-09-22
Granted: 2000-10-11
Abstract: The invention relates to a pump of the type comprising in particular a substantially cylindrical body (1) in one piece provided, in its lower part, with a port (11) for admission of the product and with a valve constituted by a cavity (10) containing an element (2) capable of moving between a lower abutment (12b) corresponding to the obturation of said admission port (11) and an upper abutment (12a) corresponding to the opening of said port (11), characterized in that said upper abutment (12a) is formed by at least one discontinuous internal production (120) whose transverse dimension (X) measured in the cavity (10) is at least equal to 20% of the largest transverse dimension of the mobile element (2).
Patent TW-389876-B (TW)
Title: Noncontact IC card and its manufacturing method
Inventor: WASHIDA TETSUO
IPC: B42D15/10
Filed: 1998-09-07
Granted: 2000-05-11
Abstract: This invention relates a noncontact IC card to provide a noncontact IC card and its manufacture of which the input/output terminals of IC chip is connected with winding coil by using adhesive, furthermore, burying the IC chip and winding coil by using epoxy resin. This invention uses the conductive adhesive containing epoxy resin as a mother material. More especially, epoxy resin with which granular silver is mixed is used as conductive paste to take place of Pb-Sn based solder material.
Patent TW-396632-B (TW)
Title: Method for fabricating semiconductor device
Inventor: NORIMOTO MASAO
IPC: H01L21/332
Filed: 1998-09-07
Granted: 2000-07-01
Abstract: A method for fabricating semiconductor devices includes a step for forming a first recess on one of the surfaces of a silicon wafer of a first conductive type having high resistivity, or first and second opposing recesses on both surfaces of the silicon wafer, and a step for forming low resistivity layers by diffusing an impurity into the surface regions including the recesses. The first and the second recesses are formed on the substantially entire surface regions of the silicon wafer excluding a periphery of the silicon wafer.
Patent TW-405201-B (TW)
Title: Method for manufacturing the shallow trench isolation structure
Inventor: JENG JR-SHIANG
IPC: H01L21/76
Filed: 1998-09-18
Granted: 2000-09-11
Abstract: A method for manufacturing a shallow trench isolation structure is provided, which forms pad oxide layer and mask layer covered on a semiconductor substrate. Then define the mask layer and form the trench on said substrate. In the nitrogen or ammonia gas surrounding, proceed the rapid thermal annealing to form a silicon nitride layer on the exposed substrate surface on said trench. And form oxide layer to cover the mask layer and silicon nitride layer and to fill up the trench. Finally, strip the oxide layer, mask layer, and pad oxide layer to form the shallow trench isolation.
Patent TW-526194-B (TW)
Title: Process for the production of vinyl acetate and method of preparing a catalyst for the production of vinyl acetate
Inventor: NICOLAU IOAN
IPC: B01J37/02
Filed: 1998-10-14
Granted: 2003-04-01
Abstract: A catalyst for the production of vinyl acetate by reaction of ethylene, oxygen and acetic acid comprising a porous support on the porous surfaces of which is deposited catalytically effective amounts of metallic palladium and gold, and cupric acetate. Use of this catalyst results in a reaction having a relatively low selectivity to carbon dioxide.