baber/WOPTO huggingface dataset:
Patent TW-563082-B (TW)
Title: Antiferroelectric liquid crystal devices, method and system for driving an antiferroelectric liquid crystal display device
Inventor: OTON JOSE MANUEL
IPC: G09G3/36
Filed: 2001-03-08
Granted: 2003-11-21
Abstract: A drive system for and method of driving, an antiferroelectric liquid crystal display device (10) that has an array of addressable pixels, each of which is defined between a pair of electrodes. The system comprises a voltage generation means operable to apply the following sequence of monopolar voltage pulses (1 to 7) to at lease one of the pair of electrodes which define at least one selected pixel of the display device (10): (a) a first selection pulse (1) operable to drive the selected pixel to a first activated state; (b) a first bias pulse (2) operable to cause the selected pixel to attain a predetermined grey scale level; (c) a first erasure pulse (3) of opposite polarity to that of the first selection pulse (1) and operable to erase the memory of selected pixel and to switch the pixel to a relaxed inactive state; (d) a reset pulse (4) operable to allow the pixel to reset in the relaxed state; (e) a second selection pulse (5) of opposite polarity to that of the first selection pulse (1) operable to switch the selected pixel to a second activated state; (f) a second bias pulse (6) operable to cause the selected pixel to attain a predetermined grey scale level; (g) a second erasure pulse (7) of opposite polarity to that of the second selection pulse (5) operable to cause the selected pixel to switch to the relaxed inactive state and erase the memory of the pixel; and (h) a reset pulse (8) operable to allow the pixel to reset in the relaxed state.
Patent TW-507169-B (TW)
Title: Automatic bar code detection system
Inventor: TSAI MING-JIE
IPC: G06K9/62
Filed: 2001-04-27
Granted: 2002-10-21
Abstract: The present invention provides an automatic bar code detection system, which comprises a bar code scrolling device, a computer and a bar code scanner, wherein the bar code scrolling device comprises an electrical machinery system, two rolling disks, and two rollers. The electrical machinery system is configured in an U-shape shell and outwardly extruded with two shafts, and the shafts can drive the rolling disks for rotation. The rolling disk is used to accommodate the bar code roll for detection. When the shafts are rotating, they will drive the bar code roll to rotate together. The configuration for these two rollers can just horizontally place the bar code in-between. The bar code scanner can scan the bar code to be detected, and store the result into the computer and compare the result with the original data, so as to ensure the precision of the bar code data.
Patent TW-I267283-B (TW)
Title: Mobile communication device and the method that can identify an incoming phone call
Inventor: TSAI TONY
IPC: H04M1/00
Filed: 2001-07-24
Granted: 2006-11-21
Abstract: This invention discloses a mobile communication device that can identify an incoming phone call and the method thereof. There are a receiver, a central processor, a displayer, a memory, and a transformer that are built in the mobile communication device. The phone numbers in the mobile communication device are coordinated to form a database that is saved in the memory. When an incoming phone call is received, the central processor can compare the number of the incoming phone call with the phone numbers saved in the database, and the result derived from the comparison is converted in order to display the result on the displayer, so the mobile communication device can identify an incoming phone call.
Patent TW-523839-B (TW)
Title: Electronic device and its manufacturing method
Inventor: NAKAMURA SHIGERU
IPC: H01L25/04
Filed: 2001-08-13
Granted: 2003-03-11
Abstract: Provided are a method of manufacturing an electronic device including a first electronic component mounted on one main surface of a wiring board by being thermo-compression bonded by means of a thermo-compression bonding tool with an adhesive resin interposed between a first area of the one main surface of the wiring board and the first electronic component, and a second electronic component mounted on a second area different from the first area of the one main surface of the wiring board by melting a soldering paste material and higher than the first electronic component in post-mounting height, and wherein the first electronic component is mounted before the mounting of the second electronic component.
Patent TW-559595-B (TW)
Title: Ink container capable of adjusting its volume
Inventor: HOU I-CHUNG
IPC: B41J2/175
Filed: 2001-08-16
Granted: 2003-11-01
Abstract: The present invention provides an ink container used in a printing device. The ink container includes a housing, an air vent installed on the housing, an air bag installed in the housing whose air communicates with the atmosphere through the air vent, an ink reservoir forming between the air bag and the housing for storing ink, an ink outlet set in a bottom portion of the housing and connected to the ink reservoir, and a spring for pressing on the air bag to keep the pressure within the ink container lower than a pressure of the external air. The ink container further includes a first fixing mechanism installed in the housing for fixing the spring. The first fixing mechanism includes a hole for accommodating one end of the spring so that the spring can be fixed in the housing. The first fixing mechanism can be replaced by a second fixing mechanism, so that the volume of the ink reservoir can be substantially adjusted.
Patent TW-508334-B (TW)
Title: Molding base paper and molded paper vessel produced from it
Inventor: ASAYAMA YOSHIYUKI
IPC: D21H11/08
Filed: 2001-10-02
Granted: 2002-11-01
Abstract: A molding base paper used for forming paper vessels such as a cup or tray for foods and various industrial products is disclosed which satisfies the following conditions (1) to (4): (1) a tensile strength (JIS-P 8113) of at least 2.0 kN/m, (2) an elongation at break (JIS-P 8113) of 1.5 to 5.7%. (3) a critical compression stress, defined by the following formula, in the range of 1 to 10 Mpa: critical compression stress=A/B wherein A represents the compression strength determined by JIS-P 8126, and B represents the area of loaded part of the test piece in the determination of the compression strength, and (4) an amount of the compression deformation, caused by applying compression stress of 20 kgf/cm<SP>2</SP> in thickness direction, of 10 to 74%. The paper vessels are prepared by controlling the water content of the molding base paper at 10 to 20% and then drawing the molding base paper at 100 to 150 DEG C.
Patent TW-516208-B (TW)
Title: Fuse structure of integrated circuits
Inventor: JOU JIAN-JR
IPC: H01L23/62
Filed: 2001-10-03
Granted: 2003-01-01
Abstract: A fuse structure of integrated circuits is provided. This fuse structure has a round and smooth bottom face like semi-cylindric or cylindric shape and locates in the deposition layer that is on the substrate. So when laser removal process is conducted, the bottom face enduring stress is more uniform. The unexpected crack and break of the surrounding deposition layer do not happen, only the fuse top cracks and the fuse structure and partial deposition layer on the fuse top are removed. The produced IC device will has low failure rate and can pass the severe lifetime test.
Patent TW-I250351-B (TW)
Title: Display device and electronic appliance using the same
Inventor: MAEDA TSUYOSHI
IPC: G02F1/1333
Filed: 1997-09-12
Granted: 2006-03-01
Abstract: The polarizing plate 14 is provided above a TN liquid crystal panel 10, and a light scattering body 15 and a polarization splitting device 16 are provided below in order. The polarization splitting device 16 transmits a linearly polarized component parallel to the paper face among light beams incident from the upper side, reflects a vertical linearly polarized component, and emits the linearly polarized component parallel to the paper face upwards to the light beam incident from the downside. External light incident on the display device is reflected by the polarization splitting device 16 and is displayed brightly when it is OFF, but passes through the polarization splitting device 16 and is displayed darkly when it is ON. Light from a light source 17 passes through the polarization splitting device 16, is absorbed by a polarizing plate 12, and is displayed darkly when it is OFF, but passes through the polarization splitting device 16 and also through the polarizing plate 14, and is displayed brightly when it is ON.
Patent TW-517289-B (TW)
Title: Method for fabricating thin film transistor including crystalline silicon active layer
Inventor: JOO SEUNG-KI
IPC: H01L29/786
Filed: 2001-11-02
Granted: 2003-01-11
Abstract: A method for fabricating a TFT including a crystalline silicon active layer is disclosed, in which the metal which induced the crystallization of the active layer is offset from a gate electrode utilizing a mask used to form a lightly doped drain (LDD) region or an offset junction region in the active layer. The TFT includes a silicon active layer crystallized by crystallization inducing metal and a gate electrode, and has an LDD region or an offset junction region formed in the vicinity of the channel region. The method for fabricating the TFT forms a metal offset region without using an additional photoresist forming process, and forms a LDD region by conducting a low density doping in the metal offset region. As a result, a transistor made according to the present invention has low leakage current in its off-state, and has stable electrical characteristics in its on-state.
Patent TW-552649-B (TW)
Title: Bottom gate thin film transistor, method of producing the transistor, and display device
Inventor: SAKAI MASAHIRO
IPC: H01L21/336
Filed: 2001-11-05
Granted: 2003-09-11
Abstract: In the production of channel etch type bottom gate thin film transistors, etching damage in a channel etch step is prevented to improve the transistor performance. The channel etch is performed using non-ionic excited species, such as hydrogen radicals and fluorine radicals, generated by contact-decomposition reaction which utilizes a metal heated by electric resistance heating. Alternatively, in place of the channel etch, a portion of the source/drain semiconductor thin film immediately above the channel is nitrided by a non-ionic nitrogen-containing decomposition product that is produced by contacting molecules of a chemical substance containing nitrogen atoms with a metal heated by electric resistance heating to decompose the chemical molecules.
Patent TW-531832-B (TW)
Title: Manufacturing method for shallow trench isolation structure
Inventor: PENG BAU-CHING
IPC: H01L21/76
Filed: 2001-11-26
Granted: 2003-05-11
Abstract: A manufacturing method for shallow trench isolation (STI), which uses the spin-type wet etching method to remove the pad oxide layer, wherein the etching solution is uniformly sprayed on the substrate, and adjusting suitable rotational speed to make the substrate rotating horizontally, so as to conduct uniform etching on the pad oxide layer; then, with nitrogen and centrifugal force to remove the residual etching solution to prevent causing the divot of the dielectric layer between the shallow trench isolation structure and the active area.
Patent TW-561446-B (TW)
Title: Display device
Inventor: ASUMA HIROAKI
IPC: G02F1/13357
Filed: 2001-11-28
Granted: 2003-11-11
Abstract: In accordance with the present invention, it is able to obtain a liquid crystal display whose power consumption is small. A display area as a set of pixel areas is divided into one display area and the other display area about an X-directional virtual line. A scanning signal drive circuit which supplies a scanning signal to respective gate signal lines on one display area side and a scanning signal drive circuit which supplies a scanning signal to respective gate signal lines on the other display area side are formed separately. Drain signal lines on one display area side and drain signals on the other display area side are separated and a video signal drive circuit which supplies a video signal to the respective drain signal lines on one display area side and a video signal drive circuit, which supplies a video signal to the respective drain signal lines on the other display area side are formed separately.
Patent TW-517273-B (TW)
Title: Needle cleaning device of fluid dispenser system and the method thereof
Inventor: JENG MING-SHIANG
IPC: H01L21/00
Filed: 2001-12-14
Granted: 2003-01-11
Abstract: The present invention are a needle cleaning device of fluid dispenser system and the method thereof. The needle cleaning device has a container in the fluid dispensing operation area, a sheet-like object or plate-like object is fixed in the container perpendicularly, and the sheet-like object has an upper narrow stripe surface, then the motion of the whole glue tube is parametrically controlled. The needle is moved near the narrow stripe surface of the sheet-like object or plate-like object, and residual glue at the exterior of the needle is contacted, the residual glue will flow downward along the side of the sheet-like object or plate-like object, and all of the residual glue flowing out from the needle is collected by the container.
Patent TW-545088-B (TW)
Title: Ballast for operating electric lamps
Inventor: HUBER ANDREAS
IPC: H05B41/282
Filed: 2002-01-29
Granted: 2003-08-01
Abstract: The invention relates to a ballast for operating electric lamps, having an inverter (WR), a DC voltage supply circuit (GLV) for the inverter (WR), a load circuit, connected to the inverter (WR), for supplying voltage to one or more electric lamps (LP), a microcontroller (MC) for monitoring and controlling the operation of the ballast and a voltage supply device (HLV) for the microcontroller (MC). According to the invention, the voltage supply device (HLV) is designed as a DC-DC converter-in particular as a step-down converter-, which ensures a voltage supply to the microcontroller (MC) even in the standby mode of the ballast with the inverter (WR) deactivated. As a result, the power consumption in the standby mode can be reduced to less than 0.5 W.
Patent TW-563190-B (TW)
Title: Semiconductor structure and forming method of the same
Inventor: PATON ERIC N
IPC: H01L29/49
Filed: 2002-02-01
Granted: 2003-11-21
Abstract: Controlled silicidation of a gate electrode layer is implemented using a silicide stop layer (28). Initially, a gate dielectric layer (19) is formed over a semiconductor substrate (21) and a first silicon layer (26) is then formed on the gate dielectric layer (19). A silicide stop layer (28) is then deposited over the first silicon layer (26) and a second silicon layer (30) is deposited over the silicide stop layer (28). A metal or an alloy layer (34) is then deposited over the second silicon layer (30) and heating is conducted to react the metal or metal alloy (34) with underlying silicon (28) to form a metal silicide layer (36, 38), silicidation ceasing upon reaching the silicide stop layer (28).
Patent TW-518816-B (TW)
Title: Inductor equivalent circuit and its application circuit
Inventor: LIOU JING-MENG
IPC: H03H11/48
Filed: 2002-02-01
Granted: 2003-01-21
Abstract: A kind of equivalent circuit is composed of the followings: a current mirror circuit, which is composed of transistors Q1, Q2; two voltage following operation amplifiers OP1, OP2; two transistors T1, T2; passive device resistors R1, R2; and capacitor C1. The mutually connected gate electrodes of Q1 and Q2 are connected to the drain of Q1. After output terminals of OP1 and OP2 are connected to T2 and T1, respectively, the source electrodes of T2 and T1 are fed back to the negative terminals of OP1 and OP2. The source electrodes of T2 and T1 are connected to resistors R1 and R2, respectively. C1 is connected to the drain electrode of Q2. The current I1 of input terminal in the circuit is 90 degrees lagged behind the voltage V1 so as to make the circuit behave like an inductor, in which the equivalent inductance Leq=C1R2R1/n, and the constant n represents a ratio between channel to width in Q2 and Q1. One more transistor can be added to the invention to form an extended current mirror circuit that can be input to the next stage.
Patent TW-558492-B (TW)
Title: Electromotive mold opening/closing device
Inventor: FUJITA SABURO
IPC: B29C45/68
Filed: 2002-02-01
Granted: 2003-10-21
Abstract: Means for advancing/retracting a movable die plate 9 toward/away from a fixed die plate 5 comprises: a moving table 17 with an upper surface on which the movable die plate 9 is mounted and a lower surface to which a sliding device 21 is mounted; a pair of track rails 23 laid on a base 1 and coupled to the sliding device 21 to form linear guides; a ball screw shaft 35 supported, in a rotatable but axially non-displaceable manner, by bearings mounted on the base 1 and parallel with the track rails 23; a servo-motor 45 driving the ball screw shaft 35; and a ball screw nut 37 engaging the ball screw shaft 35 and installed on the lower surface of the moving table 17; and the ball screw shaft 35 and the ball screw nut 37 are installed between the track rails 23 of the pair of linear guides at any positions.
Patent TW-544734-B (TW)
Title: Semiconductor chip carrying adhesive tape/sheet, semiconductor chip carrier, semiconductor chip mounting method and semiconductor chip packaging body
Inventor: YAMAZAKI OSAMU
IPC: C09J7/20
Filed: 2002-03-27
Granted: 2003-08-01
Abstract: A semiconductor chip carrying adhesive tape, wherein a plurality of adhesive agent portions for adhering semiconductor chips 2 are intermittently formed on a tape shaped base material 11 in the longitudinal direction of the base material 11 to have a substantially identical shape with that of the semiconductor chip 2 to be adhered or a slightly larger shape than that, and an adhesive agent constituting said adhesive agent portions 12 has gradable adhesiveness, can improve a yield of adhesive agent attached semiconductor chips 2 and prevent a wasteful use of an adhesive agent.
Patent TW-I244570-B (TW)
Title: Active matrix type liquid crystal display device and fabrication method thereof
Inventor: MATSUMOTO KOUICHI
IPC: H01L21/336
Filed: 2002-04-15
Granted: 2005-12-01
Abstract: In an in-plane switching (IPS) mode active matrix type liquid crystal display device, data lines 24 supplied with data signals, common electrode wiring portions 26a and 26b applied with a reference voltage, a common electrode 26, pixel electrodes corresponding to pixels to be displayed, scanning lines 28 supplied with scan signals and TFT's 50 are provided on an active element substrate 11. The common electrode wiring portions 26a and 26b are formed by using a first metal layer, extend in parallel to the scanning line and connected to a common electrode potential at a peripheral portion thereof. Protruded portions 299a and 299b are formed in at least one of the common electrode wiring portions 26a and 26b in such a way that the protruded portions are positioned on both sides of the data line 24 to be formed later. Unevenness of display of the display device is reduced and the aperture ratio thereof is improved.
Patent TW-554494-B (TW)
Title: High voltage N-channel LDMOS devices built in a deep submicron CMOS process
Inventor: SPADEA GREG
IPC: H01L29/08
Filed: 2002-05-15
Granted: 2003-09-21
Abstract: A novel laterally diffused NMOS device is described. With proper design the drain terminal of this device can be raised to a much higher voltage that the maximum allowed gate voltage of the CMOS technology into which the device is built. The device can be built in a conventional deep submicron CMOS technology as used for the 0.25 um node and beyond without additional masks or dedicated processing steps. When a deep N-well mask and ion implantation is added to the process, the device can be operated with a body voltage positive above ground. This device can be used like a conventional LDMOS for circuits which require a device capable of switching voltages which exceed the rating of conventional CMOS devices by using as low voltage input signal.
Patent TW-557588-B (TW)
Title: Bonding of light emitting diodes having shaped substrates and collets for bonding of light emitting diodes having shaped substrates
Inventor: SLATER DAVID B JR
IPC: H01L33/20
Filed: 2002-07-22
Granted: 2003-10-11
Abstract: Bonding of flip-chip mounted light emitting devices having an irregular configuration is provided. Light emitting diodes having a shaped substrate are bonded to a submount by applying forces to the substrate an a manner such that shear forces within the substrate do not exceed a failure threshold of the substrate. Bonding a light emitting diode to a submount may be provided by applying force to a surface of a substrate of the light emitting diode that is oblique to a direction of motion of the light emitting diode to thermosonically bond the light emitting diode to the submount. Collets for use in bonding shaped substrates to a submount and systems for bonding shaped substrates to a submount are also provided.
Patent TW-I282644-B (TW)
Title: Power plug with safety feature
Inventor: CHU KUEN-YAN
IPC: H01R13/10
Filed: 2002-07-25
Granted: 2007-06-11
Abstract: A power plug has a housing, a voltage prong, a neutral prong, and a ground prong, the prongs set in the housing, and a main body elastically set in the housing and encircling the prongs. When plugging the power plug into a socket, the main body retracts toward the housing. When unplugging the power plug from the socket, the main body is pushed away from the housing. In such a manner, only a small section of each prong is exposed to open air or the prongs are not exposed at all, increasing the safety of the power plug.
Patent TW-552661-B (TW)
Title: Gettering method of silicon wafer by using very high energy blanket implant
Inventor: XIAO YU-CHENG
IPC: H01L21/66
Filed: 2002-08-06
Granted: 2003-09-11
Abstract: The present invention provides a gettering method of silicon wafer by using very high energy blanket implant (VHEBI), wherein ions are implanted into the deep layer of silicon wafer with high energy by VHEBI, so that the depth of the surface impurity defects is reduced globally, and the surface impurity defects can diffuse into the damaged region deeper under the silicon wafer surface, thereby effectively reducing the impurity defects and dislocations in the device forming region of the silicon wafer. The present invention utilizes the VHEBI technology to eliminate the surface impurity defects, so as to provide a silicon wafer surface with very low impurity concentration and few dislocations for fabricating integrated circuits on top of it, and to keep good MOS device characteristics and to increase the product yield rate.