baber/WOPTO huggingface dataset:
Patent TW-593181-B (TW)
Title: Process for preparing batch materials for the manufacture of glass
Inventor: JEANVOINE PIERRE
IPC: C03B5/18
Filed: 2000-02-03
Granted: 2004-06-21
Abstract: The subject of the invention is a process for manufacturing compounds based on one or more silicates of alkali metals, such as Na and K, and/or on rare earths, such as Ce, optionally in the form of mixed silicates which combine alkaline-earth metals, such as Ca, with the alkali metal(s) and the rare earth(s), by conversion of silica and of halides, especially of one or more chlorides, or sulfate or nitrate, of the said alkali metals and/or of the said rare earths and/or of the said alkaline-earth metals, such as NaCl, KCl or CeCl4. The heat needed for the conversion is supplied, at least partly, by one or more submerged burners. The subject of the invention is also an apparatus for carrying out the process and for its use.
Patent TW-542962-B (TW)
Title: Method of addressing a set of addressable units and corresponding system
Inventor: DURANTON MARC
IPC: G06F13/00
Filed: 2000-03-27
Granted: 2003-07-21
Abstract: A method is described for addressing units (FU1, FU2, FU3) from a plurality of units having different addresses (ADD1, ADD2, ADD3) by use of an address word (AW), the addresses and the address word being formed by address elements. A tag word (TW) is transmitted to the plurality of units, the tag word defining which address elements of the address word are significant (S) and which address elements of the address word are not significant (X). The address word and the addresses of the units are compared and a unit is addressed if the significant elements of the address word match the corresponding elements of the unit's address.
Patent TW-445574-B (TW)
Title: Semiconductor device and method of manufacturing the same
Inventor: OKADA MASAKAZU
IPC: H01L29/06
Filed: 2000-04-28
Granted: 2001-07-11
Abstract: A semiconductor device can reduce a leak current, and a manufacturing method can provide such a semiconductor device. A semiconductor device includes an isolating and insulating film formed on a main surface of a semiconductor substrate including a first conductivity type region, and also includes a field-effect transistor. The field-effect transistor includes a second conductivity type region neighboring to the isolating and insulating film, a gate electrode, a lower layer side wall film formed on a side surface of the gate electrode, an upper layer side wall film formed on the lower layer side wall film and containing a material different from that of the lower layer side wall film, and a high-melting-point metal silicide layer formed on the second conductivity type region. The upper surface of the isolating and insulating film is located at a level substantially equal to or lower than the main surface of the semiconductor substrate and higher than a junction boundary surface between the first and second conductivity type regions.
Patent TW-461863-B (TW)
Title: Front mud guard structure of scooter type motorcycle
Inventor: YAU MING-SHUEN
IPC: B62J15/02
Filed: 2000-05-12
Granted: 2001-11-01
Abstract: This invention is related to a front mud guard structure of a scooter type motorcycle, which is capable of enhancing rigidity of the front mud guard structure to prevent the front mud guard from generating vibration and noises. The mud guard 7 freely, rotatably supported by the shaft of the front wheel and positioned beneath a lower end of the front fork is covered by a resin material; the front mud guard 7 is provided along an interior thereof with a metallic enhancing member 31. According to this invention, because the front mud guard 7 is provided along the interior thereof with a metallic enhancing member 31, the rigidity of the enhancing member 31 enhances rigidity of the front mud guard, such that the mud guard 7 does not generate vibration and noises.
Patent TW-553862-B (TW)
Title: Seating detecting device for motorcycles
Inventor: KAWAMOTO SHUICHI
IPC: B62J1/12
Filed: 2000-05-31
Granted: 2003-09-21
Abstract: A seating detecting device for a motorcycle wherein a front end of a seat covering a storage box is openably and closably supported on an upper portion of a front end of the storage box, with the seat being vertically movable while closing the storage box, an arm member vertically movable in unison with the seat is resiliently urged upwardly, and a seat switch for detecting vertical movement of the arm member is mounted on the storage box, detects highly accurately when the driver is seated on the seat. A storage box 29 has a limiting surface 42 for abutting against an upper surface of an arm member 39 whose one end is supported on the storage box 29 to limit an upward movement end of the arm member 39, and a transmitting member 35 vertically movable in unison with the seat 32 is disposed upwardly of the arm member 39 so as to be able to abut against an upper surface of the arm member 39.
Patent TW-477812-B (TW)
Title: System and method for oil fuel burning integrated combined cycle power generation
Inventor: OKADA TSUYOSHI
IPC: C10G45/02
Filed: 2000-11-14
Granted: 2002-03-01
Abstract: A light portion is extracted from feed oil by a separation system. The light portion is then subject to a hydrotreatment to obtain impurity-removed fuel oil which is stored in an intermediate tank. A residue of the feed oil after extraction of the light portion is gasified to obtain syngas (H2 gas + CO gas) which is used as basic fuel for power generation in a power generation system. The fuel oil is fed to the power generation system as auxiliary fuel for supplementing the power generation based on the syngas. The power generation system includes a plurality of gas turbines and generators. The number of the gas turbines to be driven by the fuel oil is controlled to adjust the power generation amount depending on demand.
Patent TW-527227-B (TW)
Title: A method and apparatus for forming a coating of a paint composition on a substrate
Inventor: BUECHER UDO WOLFGANG
IPC: B05D1/00
Filed: 2000-12-01
Granted: 2003-04-11
Abstract: A method of forming and coating of a paint composition on a substrate which includes the steps of (a) moving the substrate past an applicator roll while maintaining contact between the applicator roll and the substrate and rotating at least the applicator roll and optionally a metering roll in contact with the applicator roll so that the paint composition is carried by the applicator roll through a nip between the applicator roll and a metering roll and into contact with the substrate and forms a coating on the substrate; (b) supplying the paint composition in liquid form into a pool of the paint composition in the nip between the rolls at a controlled volume flow rate that is substantially equal to the volume flow rate that is required to achieve a desired target wet paint film thickness on the substrate; and (c) maintaining the level and hence the volume of the paint in the pool to be substantially constant.
Patent TW-461118-B (TW)
Title: Thin film transistor with increased device reliability and production process thereof
Inventor: LU I-MIN
IPC: H01L21/336
Filed: 2000-12-15
Granted: 2001-10-21
Abstract: The present invention relates to a thin film transistor with an increased device reliability and a production process thereof. The method can produce a thin film transistor device and array with a high quality. The production process of the thin film transistor comprises: forming a polysilicon island on a substrate; depositing a silicon oxide layer to cover the substrate and the polysilicon island; depositing a silicon nitride layer on the silicon oxide layer; forming a metal layer on the silicon nitride layer; patterning the metal layer to form a gate; using the gate as a mask to etch the silicon nitride layer to remove the silicon nitride layer not covered by the gate metal; doping the two sides of the gate to separately form a source region and a drain region in the polysilicon layer. The thin film transistor is mainly characterized in, prior to forming the gate metal, forming a silicon nitride layer on the oxide layer. The combination of the oxide layer and the silicon nitride layer as the gate insulation layer is advantageous to the integration of the doping process of the oxide. Furthermore, it can take place together with a hydrogenation process, thereby reducing the defects in the polysilicon layer and improving the current-voltage characteristics of the transistor.
Patent TW-454079-B (TW)
Title: High-pressure ball-poppet control valve
Inventor: WEILER CHARLES A JR
IPC: F15B13/04
Filed: 2001-01-17
Granted: 2001-09-11
Abstract: A high-pressure fluid control valve is disclosed for operating a fluid-actuated device. Preferably a ball-poppet and frusto-conical valve seat adapted for substantially line-type contact therebetween are provided with an upstream restricted flow area in order to substantially minimize sonic flow damage to the actual sealing surface of the valve seat. Preferably, the ball-poppet is movable within a poppet guide that is allowed to float radially in order to allow the ball-poppet to be substantially self-centering with respect to the valve seat. In addition, cross-over leakage is preferably negated by closing an exhaust ball-poppet just prior to opening a supply ball-poppet.
Patent TW-484241-B (TW)
Title: Group III nitride compound semiconductor light emitting device and its manufacturing method
Inventor: UEMURA TOSHIYA
IPC: H01S5/323
Filed: 2001-01-19
Granted: 2002-04-21
Abstract: The objective of the preset invention is to provide a group III nitride compound semiconductor light emitting device, which can greatly improve the productivity of a light emitting device by preventing the peeling of a reflective layer. To achieve the objective, on the back surface (a substrate surface 11b) of a substrate 11, a reflective layer 10 is formed, in which an expansion part 10a is provided over nearly full outer periphery near the sapphire substrate of a sidewall 21a of the light emitting device. Since the coherency between the reflective layer 10 near the outer periphery of a reflective layer formation surface (the substrate surface 11b) and the substrate is greatly reinforced by forming the expansion part 10a, the reflective layer 10 does not peel with a part near the outer periphery of the reflective layer formation surface as a starting point, thus preventing the generation of non-conforming products having the peeling of the reflective layer even if a process by putting an adhesive sheet onto the reflective layer 10 for fixing a light emitting device 100 onto the adhesive sheet is provided, and hence greatly improving the quality and productivity of a semiconductor light emitting device 100 where the reflective layer 10 is provided to increase illumination efficiency. On the sidewall 21a, a short-circuiting prevention groove for restricting the unnecessary expansion of the reflective layer 10 may be provided.
Patent TW-548236-B (TW)
Title: Process for producing silica-based film, silica-based film, insulating film, and semiconductor device
Inventor: SHIOTA ATSUSHI
IPC: H01L21/3105
Filed: 2001-01-31
Granted: 2003-08-21
Abstract: A process for producing a silica-based film which comprises irradiating a film comprising at least one siloxane compound with electron beams to thereby convert the film into a film having a dielectric constant of 3 or lower and having silicon carbide bonds represented by Si-C-Si is disclosed. The film has an even thickness, is excellent in storage stability, dielectric constant, mechanical strength, etc., has low hygroscopicity, and is suitable for use as a dielectric film in semiconductor devices and the like.
Patent TW-594996-B (TW)
Title: A thin film transistor and a method for manufacturing thereof
Inventor: YUDASAKA ICHIO
IPC: H01L21/20
Filed: 2001-02-09
Granted: 2004-06-21
Abstract: In TFT 10, the channel region 15 towering over the gate electrode 14 through the gate insulation film 12, the source region 16 connecting to the channel 15 and the drain region 17 connecting to the channel region 15 on the opposite side of the source region 16 are formed on the polycrystal semiconductor film 100 on which island-like patterning is performed. An indented section 155 is formed on the surface of the channel region 15, and the section corresponding to the indented section 155 becomes the recombination center 150 which captures the small-number carrier (holes) because the degree of the crystallization is low in the section corresponding to the indented section 155 due to shift from the optimum conditions at the time of laser annealing of the semiconductor 100. Thus the invention provides a TFT and its production method which enable the stabilizing of saturation current and improving reliability by improving the film quality of the channel region.
Patent TW-472355-B (TW)
Title: Embedded type copper contact plug
Inventor: CHENG KUAN-LUN
IPC: H01L21/768
Filed: 2001-02-23
Granted: 2002-01-11
Abstract: The present invention provides an embedded type copper contact plug, which is formed in a dielectric layer simultaneously with a copper wire, for electrically connecting to the copper wire and the source, drain or gate of a MOS formed on complete depletion type silicon covered insulation substrate. A selective tungsten layer is provided on the surface of the source, drain, or gate for electrically connecting to the copper contact plug, wherein the selective tungsten layer is a tungsten nitride/tungsten compound metal layer, and a diffusion barrier layer of tantalum nitride/tantalum compound metal is provided between the copper contact plug and the selective tungsten layer for prevent copper atoms from diffusing.
Patent TW-550134-B (TW)
Title: Stacked-layer type heat exchanger
Inventor: HIGASHIYAMA NAOHISA
IPC: F28F9/02
Filed: 2001-02-26
Granted: 2003-09-01
Abstract: This invention relates to a stacked-layer type heat exchanger which is used as evaporator etc. The object of stacked-layer heat exchanger is to increase the copper brazing performance in the middle parts of inserting portion of fluid inlet pipe, and of inserting portion of fluid exit pipe. Thereby, the prevention of short-cut of flow-path of fluid inlet and fluid exit can be ensured.
Patent TW-471991-B (TW)
Title: Removable electrode
Inventor: OHMORI HITOSHI
IPC: B24B53/12
Filed: 2001-02-26
Granted: 2002-01-11
Abstract: A removable electrode for electrolytically dressing the grinding electrode is disclosed in the present invention, in which the electrode is disposed oppositely to a processing surface of a conductive grinding wheel via a gap and a conductive liquid is passed through between the electrode and the conductive grinding wheel to apply a voltage thereto such that the grinding wheel is dressed by electrolysis and a work piece is simultaneously ground. The electrode is composed of the followings: an electrode support member 12, which has a surface 12a disposed oppositely to the processing surface of the grinding wheel via a constant gap; a conductive foil 14, which is detachably attached to and follows the opposite surface of the electrode support member; and a conductive terminal 16, which contacts the conductive foil to apply the voltage to the conductive foil. Even when a deposit is built up on a cathode surface, the cathode surface can be cleaned in a short time. In addition, the electrode shape is not changed even after it is used repeatedly. Thus, an ELID grinding apparatus can steadily be operated in an unmanned manner for a long time.
Patent TW-480333-B (TW)
Title: System and method for film detaching
Inventor: WU TIE-DING
IPC: G01N1/02
Filed: 2001-06-14
Granted: 2002-03-21
Abstract: The present invention relates to a system and method for detaching a film from a carrier tape and, more particularly, to a system and method for detaching a ceramic film or a printed film from a PET carrier. The film is cut off by the blade module and is peeled off by the sucking device while the sliding platform is driving the PET carrier away. The present invention provides an automatic production line to locate the film, to cut the film off, and to peel the film off from the PET carrier.
Patent TW-I230693-B (TW)
Title: Process and apparatus for manufacturing immobilized microorganism carrier
Inventor: TSENG CHIE-CHIEN
IPC: C02F3/34
Filed: 2001-07-11
Granted: 2005-04-11
Abstract: A process and an apparatus for manufacturing immobilized microorganism carrier are disclosed. The immobilized microorganism carrier is fabricated by using porous materials, organic solvents, and microorganism-containing sludge. The immobilized microorganism is suitable for use in wastewater treatment. The manufacturing process and apparatus of the invention can produce a long life, high mechanical strength and high bioactive immobilized microorganism carrier in a more productive manner.
Patent TW-514768-B (TW)
Title: Material-feeding control system and method
Inventor: LU BO-WEN
IPC: G05B15/00
Filed: 2001-07-24
Granted: 2002-12-21
Abstract: The present invention provides a material-feeding control system and method. The invention is applied in material-feeding control process in a SMD operation station. It is required to stick a barcode on each material plate corresponding to its material number, wherein a barcode has information of the material number, supplied amount of the material plate and barcode number. One barcode corresponds to a station number in the SMD station number table, so as to store several barcodes and SMD station number tables in a database. The material plate placement signal generated by corresponding each station to material-feeding control system is used to establish a station number mapping table. In the station number mapping table, each material plate placement signal corresponds to a station number. The station number mapping table is stored in a storage unit. At first, an operator scans the barcode of the material plate to make the material-feeding control system find the station number corresponding to the barcode in the database. Based on the station number, the station generates a material-feeding suggestion signal to the operator. After the material plate is placed in the station, the station generates a material plate placement signal to make the material-feeding control system search the corresponding station number in the storage unit based on the material plate placement signal. Furthermore, based on the obtained station number, the message indicating that the station number has been placed in the material number is recorded in the SMD station number table stored in the database, and a display unit is used to show the station number. After stations required to be operated in a machine have been placed with material plates, the material feeding control system starts to transmit an on-line signal toward the machine for the operator. Before the machine starts to operate, the supplied amount of material plate is obtained from the database based on the barcode corresponding to each station number. Therefore, the material feeding control system determines the material changing time in the station of the machine based on the obtained supplied amount of the material plate. When the operating time of machine is going to reach the material changing time of the material plate, a material changing suggestion signal is transmitted to the operator in advance, and the display unit shows the material number of the material plate and station number required to be replaced, so that the operator can conveniently receive material from the material preparation area in advance.
Patent TW-I230745-B (TW)
Title: A surface treatment process for mechanical parts subject to both wear and corrosion
Inventor: CHOMER STEPHANE
IPC: C23C22/50
Filed: 2001-08-02
Granted: 2005-04-11
Abstract: A surface treatment process for mechanical parts, for conferring on said parts a high resistance to wear and corrosion and a roughness propitious to lubrication, in which process nitriding of said part is followed consecutively by oxidation of said part, characterized in that said nitriding is applied by immersing said part in a molten salt nitriding bath free of sulfur-containing species at a temperature from approximately 500 DEG C to approximately 700 DEG C, and in that said oxidation is carried out in an oxidizing aqueous solution at a temperature less than approximately 200 DEG C.
Patent TW-540186-B (TW)
Title: Low profile combination switch and connector assembly
Inventor: GENZ EARL J
IPC: H01R4/24
Filed: 2001-10-12
Granted: 2003-07-01
Abstract: A combination electrical connector and electrical switch comprises a three-sided shroud portion formed upon the electrical switch housing so as to ensure proper electrical connection of the electrical switch and electrical connector in a polarized manner. The electrical connector comprises electrical contacts which include insulation displacement portions for electrical connection to external wiring, and blade reception portions for electrical connection to blade members of the electrical switch wherein all electrical connections are solderless. The blade reception portions of the contacts comprise oppositely disposed, flexible members which are integrally connected together and which are able to self-generate the necessary forces to engage and retain the blade members of the electrical switch.
Patent TW-594140-B (TW)
Title: Fringe field switching mode liquid crystal display, and fabrication method therefor
Inventor: KIM CHUL-HA
IPC: G09F9/35
Filed: 2001-11-30
Granted: 2004-06-21
Abstract: The present invention relates to a fringe field switching mode liquid crystal display, comprising: gate lines and data lines aligned on a transparent insulating substrate to vertically cross each other; common electrode lines aligned horizontally to the gate lines; a pixel region defined in a space formed by the gate lines and data lines; a first transparent electrode formed in the pixel region, and divided into at least two regions; and a second transparent electrode insulated from the first transparent electrode, and divided on the first transparent electrode as many as the first transparent electrode, a data voltage being applied to the second transparent electrode in a first region and to the first transparent electrode in a second region, a sum of the voltages applied to the pixel region having a zero voltage.
Patent TW-517385-B (TW)
Title: Manufacturing method and operation method of code and data type embedded flash memory
Inventor: GUO DUNG-JENG
IPC: H01L27/115
Filed: 2001-12-06
Granted: 2003-01-11
Abstract: Manufacturing method of code and data type embedded flash memory is disclosed. First, provide a substrate. Form plural bit lines on the substrate and plural isolation structures among the bit lines. Second, complex insulated layers are made among these isolation structures. Then plural word lines are formed on the complex insulated layers and isolation structures. The word lines cross the bit lines to form a flash memory structure. Finally, divide the flash memory structures into two areas, data memory cell area and code memory cell area according to the practical requirement.
Patent TW-513722-B (TW)
Title: Metal template
Inventor: HUANG PITA
IPC: G11B7/26
Filed: 2001-12-11
Granted: 2002-12-11
Abstract: This invention provides a metal template, consisting of: a metal film substrate and a passivation film, in which the surface of the metal film substrate has arc texture formed, the passivation film is formed on the surface of the metal film substrate by electrolysis; during the electrolytic process, an anti-oxidant solution, a dichromate solution, a degreasing agent or a sodium hydroxide solution can be used.