baber/WOPTO huggingface dataset:
Patent TW-589747-B (TW)
Title: Semiconductor light emitting device and method for producing the same
Inventor: KOIDE NORIKATSU
IPC: H01L33/06
Filed: 2002-11-01
Granted: 2004-06-01
Abstract: A method for producing a semiconductor light emitting device includes the steps of forming a mask layer having a plurality of openings on a surface of a silicon substrate; and forming a column-like multi-layer structure including a light emitting layer in each of the plurality of openings with nitride semiconductor materials. A width between two adjacent openings of the plurality of openings of the mask layer is 10 mum or less.
Patent TW-I226325-B (TW)
Title: Process for producing carbonyl difluoride
Inventor: OHASHI MITSUYA
IPC: C01B32/80
Filed: 2002-11-05
Granted: 2005-01-11
Abstract: The invention relates to a process for producing carbonyl difluoride. This process includes the steps of (a) reacting carbon monoxide with a first metal fluoride in a reactor, thereby obtaining carbonyl difluoride and a second metal fluoride having in the molecule a fluorine atom number less than that of the first metal fluoride; and (b) reacting the second metal fluoride with fluorine in the reactor, thereby obtaining the first metal fluoride. The steps (a) and (b) are alternately repeated in the reactor, thereby repeatedly producing carbonyl difluoride.
Patent TW-556042-B (TW)
Title: Transmission type screen and projection type display device
Inventor: SUZUKI HIROSHI
IPC: G02B27/18
Filed: 2002-11-27
Granted: 2003-10-01
Abstract: The present invention provides a transmission type screen, which comprises a Fresnel-lens-like refraction-total-internal-reflection plate which has a zigzagged incident surface for the incident light to inject in and the exit surface for the projected light to exit; and an image formation plate to form the image of the light exiting from the refraction-total-internal-reflection plate for obtaining the projected image. The projected light is refracted by the incident surface of the refraction-total-internal-reflection plate. The plural tilted refractive planes toward the exit surface, the plural transmitting planes, and the tilted total-internal-reflection surface to reflect the light transmitting to the transmitting plane and make the light advance toward the exit surface, are formed on concentric circles. The refraction-total-internal-reflection plate is formed of transparent material with non-dispersed scattering particles.
Patent TW-I222768-B (TW)
Title: Narrow flat-plate antenna
Inventor: SU CHIH-MING
IPC: H01Q9/14
Filed: 2002-12-20
Granted: 2004-10-21
Abstract: The present invention is related to a narrow flat-plate antenna. The antenna comprises a shorter radiating metal line for generating the desired operating mode, a longer grounding metal line substantially parallel to the said shorter radiating metal line, with one end of the said longer grounding metal line electrically connected to one end of the said shorter radiating metal line via a narrow flat metal plate, a feeding point connected to the central signal core of the feeding coaxial cable, and a grounding point connected to the outer meshed ground conductor of the feeding coaxial cable. The present invention is suitable for the wireless local area network (WLAN) applications in the 2.4 GHz (2.4-2.484 GHz) band, and the constructed prototype shows good antenna gain for WLAN operations.
Patent TW-591364-B (TW)
Title: Manufacturing method of worm rolling type heat-conduction superconducting pipe
Inventor: LIOU JIUN-FU
IPC: G06F1/20
Filed: 2003-01-29
Granted: 2004-06-11
Abstract: A kind of method for manufacturing worm rolling type heat-conduction superconducting pipe is disclosed in the present invention. On the outer surface of the cone-shaped body, the spiral rail is disposed; and after surrounding the heat-conduction superconducting pipe along the spiral rail, the cone-shaped body is separated from the heat-conduction superconducting pipe so that the heat-conduction superconducting pipe forms a shape like the spring. The spring-shaped heat heat-conduction superconducting pipe is pressed along the axial direction to form a plane shape, so as to obtain the worm rolling type heat heat-conduction superconducting pipe.
Patent TW-584863-B (TW)
Title: A variable self-time scheme for write recovery by low speed tester
Inventor: YUAN DER-MIN
IPC: G11C29/14
Filed: 2003-01-29
Granted: 2004-04-21
Abstract: In accordance with the objectives of the invention a new method is provided for testing DRAM cells using a slow-speed tester. An adjustable self-time scheme is provided that is used for write-recovery during the testing of DRAM devices using a low-speed tester. CSL and WL pulses are self-time controlled and are in this manner used to emulate DRAM operation under different operational conditions. The adjustable self-time scheme of the invention can be used to screen write recovery (twr) depending on field requirements for the DRAM cell, a low-speed tester can be used for the screening.
Patent TW-I248612-B (TW)
Title: Phase-change recording material used for information recording medium and information recording medium employing it
Inventor: HORIE MICHIKAZU
IPC: G11B7/259
Filed: 2003-03-03
Granted: 2006-02-01
Abstract: A phase-change recording material used for an information recording medium utilizing a crystalline state as a non-recorded state and an amorphous state as a recorded state, which has the composition of the following formula (1) as the main component: (Sb1-xSnx)1-y-w-zGeyTewMl2, wherein each of x, y, z end w represents atomicity, x, z and w are numbers which satisfy 0.01 <= x <= 0.5, 0 <= z <= 0.3 and 0 <= w <= 0.1, respectively, and the element Ml is at least one element selected from the group consisting of In, Ga, Pt, Pd, Ag, rare earth elements, Se, N, O, C, Zn, Si, Al, Bi, Ta, W, Nb and V, and (I) when z=0 and w=0, y is a number which satisfies 0.1 <= y <= 0.3, (II) when 0 < z <= 0.3 and w=0, y is a number which satisfies 0.05 <= y <= 0.3, and (III) when 0 <= z <= 0.3 and 0 < w <= 0.1, y is a number which satisfies 0.01 <= y <= 0.3.
Patent TW-583771-B (TW)
Title: Method of fabricating TFT with a self-aligned structure
Inventor: LIN HSIAO-YI
IPC: H01L29/786
Filed: 2003-03-11
Granted: 2004-04-11
Abstract: A method of fabricating a thin film transistor (TFT) with self-aligned structure. A substrate is provided, with a semiconductor layer and gate insulation layer in sequence formed thereon, followed, by formation of a conductive layer on the gate insulation layer, and definition of the conductive layer to form a gate conductive layer and a dummy conductive layer. The dummy conductive layer is positioned on both sides of the gate conductive layer and is provided with a gap between the gate conductive layer and the dummy conductive layer. A first ion implantation is performed via the gap to form a lightly doped region on the semiconductor layer under the gap, and a sacrificial layer is formed to fill out the gap. The dummy conductive layer is removed. The gate conductive layer and a part of the remaining sacrificial layer are used as a mask. Finally, a second ion implantation is performed to form a heavily doped source/drain region on the semiconductor layer.
Patent TW-562895-B (TW)
Title: A hinge
Inventor: SALICE LUCIANO
IPC: E05D5/08
Filed: 2003-03-19
Granted: 2003-11-21
Abstract: The invention relates to a hinge, preferably a furniture hinge, comprising a hinge arm which is pivotally connected, at one end, via a joint axle to a hinge part and, at the other end, via holding means to a bass element, preferably to a base plate. Provision is made in accordance with the invention for the holding means to comprise a first eccentric adjustment, preferably retained by friction, for displaceable holding which allows a displacement parallel to the joint axle.
Patent TW-I232035-B (TW)
Title: Wake-on-lan device
Inventor: BOOTH BRADLEY J
IPC: H04B10/00
Filed: 2003-05-15
Granted: 2005-05-01
Abstract: Disclosed are a device and method of powering down an optical transceiver coupled to an optical transmission medium. A data transceiver may be coupled to transmit data between the optical transceiver and a media independent interface (MII). The data transceiver comprises logic to power down at least a portion of the optical transceiver in response to detection of a power down condition.
Patent TW-I220285-B (TW)
Title: Semiconductor test structure for clarifying the cause of leakage current
Inventor: ZHENG WANG
IPC: H01L21/66
Filed: 2003-06-13
Granted: 2004-08-11
Abstract: The present invention provides a kind of semiconductor test structure for clarifying generation cause of leakage current. The invention contains a well having the first conduction characteristic; and the first isolation device is located in the well. At least the first doped region is located at one side of the first isolation device, and the first doped region has the second conduction characteristic. The second doped region is located in the well that is located at the other side opposite to that of the first isolation region. The second doped region has the first conduction characteristic with its doping concentration larger than that of the well, and is connected externally to a grounding electric-potential. The structure can be used to clarify each kind of leakage current types, for example surface type, field edge type, polysilicon edge type, or gate edge type, caused by junction or oxide layer.
Patent TW-I228644-B (TW)
Title: Electron beam exposing method and device
Inventor: HISATSUGU TOKUSHIGE
IPC: H01J37/317
Filed: 2003-06-27
Granted: 2005-03-01
Abstract: Electron beam (22) emitted form an electron emission source (14) is directed through an opening provided in a stencil mask (18) to a photosensitive test price (12) to expose the photosensitive test price (12). Before the election beam (22) reaches the opening of the stencil mask the electron beam is subject to a low strength electric filed under which the electron beam passes at a low speedy and after the electron beam passes through the opening of the stencil mask the electron beam is subject to a high strength electric field under which the electron beam passes at a high speed. The electron beam exposing device includes an electron emission source, a stencil mask having an opening for the electron beam to pass there through, a supporting table (16) for supporting a low electric filed generating device for causing the electron beam to be subject to low strength electric filed, and a high electric filed generating device for causing the electron beam to be subject to high strength electric filed.
Patent TW-I225688-B (TW)
Title: Memory device with vertical transistors and deep trench capacitors and manufacturing method thereof
Inventor: WU CHANG-RONG
IPC: H01L21/8239
Filed: 2003-07-03
Granted: 2004-12-21
Abstract: A memory device with vertical transistors and deep trench capacitors. This device includes a substrate containing at least one deep trench and a capacitor disposed in the lower position of the deep trench. A conducting wire is provided on the capacitor. A trench top isolation (TTO), a stacked layer containing a first isolation layer and a second isolation layer, is provided on the conducting wire, wherein the first isolation layer is a liner of the deep trench and is disposed on the sidewall of the second isolation layer as a spacer. A control gate is provided on the TTO. A buried strap is provided within the substrate beside the conducting wire. A doping area is provided within the substrate beside the control gate. A manufacturing method for forming such memory device is also disclosed.
Patent TW-I227902-B (TW)
Title: Switch integrated type housing and electronic equipment having the same
Inventor: KOBAYASHI YOSHIAKI
IPC: H01H13/70
Filed: 2003-07-08
Granted: 2005-02-11
Abstract: A switch integrated type housing includes a housing body, a switch button sheet, a conductor and a cover sheet. The housing body is provided with a plurality of concave sections on an outer surface of the housing body. The switch button sheet is provided on the outer surface to cover the plurality of concave sections. The conductor has a dome shape downwardly projecting and is provided in each of the plurality of concave sections to contact the switch button sheet. The cover sheet is provided between the switch button sheet and the outer surface of the housing body in a portion of the outer surface of the housing body other than the plurality of concave sections and to cover a lower surface of the conductor in each of the plurality of concave sections.
Patent TW-I233842-B (TW)
Title: Method for making sheet-like metal powder from recycled optical disks
Inventor: WANG JENN-SHING
IPC: B09B3/00
Filed: 2003-07-28
Granted: 2005-06-11
Abstract: This invention relates to a method for making sheet-like metal powder from recycled optical disks, using the consistent thickness of the metal reflective film of the optical disks. The metal layer is first separated from the substrate and then crumbled. Or the optical disk is first crumbled and then separated from the substrate, to become sheet-like metal powder. The consistent thickness ensures that the powder is of the same thickness so as to serve as method for making powder with high thermal and electrical conductivity.
Patent TW-I289126-B (TW)
Title: Tow-rope coupler
Inventor: STEUER WERNER
IPC: F16C1/10
Filed: 2003-08-06
Granted: 2007-11-01
Abstract: This invention relates to a detachable coupler of a tow-rope, for example on a gear-hub with an integrated system to generate switching paths. The mechanical transfer-rope from the operation-element or switch to the gear-hub must be broken at the detachment of the driving wheel. This is performed preferably in the vicinity or directly on the gear-hub. The linear switching movement is converted into a rotation-movement by means of a rope-spool and conducted into the gear. The rope-spool is accepted by a housing-part and the switching rod is held in a conduct-section in the mounting position. The connection-sleeve on the ends of the tow-rope disposes like the tow-rope-nipple a radial feeding-opening or joint-contour, which is adjusted at the suspending-contour on the switching rod-nipple and at the contour on the conduct-section. The tow-rope-nipple is conducted in the connection-sleeve rotatably and is brought into the base-position by a spring. Thus it can be guaranteed that the radial opening on the tow-rope-nipple and on the connection-sleeve can always be mutually aligned. The radial opening on the connection-sleeve is closed by a sliding-sleeve and thus the fastening of the tow-rope to the switching-rod can be assured. The fastening, which can be performed with a hand, of the tow-rope to the gear-hub or to the conduct-section can carry out a swing-movement enough for the arrangement on a bicycle by means of carrying out the contour on the conduct-section and on the connection-sleeve as a joint.
Patent TW-593643-B (TW)
Title: A method for fabricating a humidity sensitive film
Inventor: WU REN-JANG
IPC: C09K3/00
Filed: 2003-08-25
Granted: 2004-06-21
Abstract: A method for fabricating a humidity sensitive film is disclosed, which includes following steps: (a) providing a polyvinyl alcohol or derivatives thereof; and adding a compound having a benzene ring which substituted with at least an acid functional group to the polyvinyl alcohol or its derivatives; (b) adding a metal oxide and an initiator to the polyvinyl alcohol or derivatives to form a reaction mixture and heating the reaction mixture for modification; and (c) coating the modified polyvinyl alcohol or its derivatives on at least one electrode.
Patent TW-I228323-B (TW)
Title: Semiconductor light emitting device and its manufacturing method, integrated semiconductor light emitting device and manufacturing method thereof, image display device and its manufacturing method, illumination device and manufacturing method thereof
Inventor: OOHATA TOYOHARU
IPC: H01L33/20
Filed: 2003-09-05
Granted: 2005-02-21
Abstract: The present invention is to grow the n-type GaN layer on a sapphire substrate, and form the hexagonal etching mask thereon; the etching mask is used to etch the n-type GaN layer with RIE method to a specific depth, and the hexagonal cylinder formed by C surfaces is formed; after removing the etching mask, by covering the hexagonal cylinder to sequentially grow the active layer and the p-type GaN layer on the entire substrate, the light emitting device structure is formed; then, form the p-side electrodes on the p-type GaN layer upon the hexagonal cylinder, and the n-side electrodes on the n-type GaN layer.
Patent TW-I223813-B (TW)
Title: Low power SRAM cell
Inventor: JANG YAN-REN
IPC: G11C11/409
Filed: 2003-09-24
Granted: 2004-11-11
Abstract: A low power SRAM cell comprises a first inverter and a second inverter mutually crossed and docked, at least a read transistor, a write transistor and a switch transistor. Each inverter is composed of a pull-up transistor and a pull-down transistor, a node is formed between them. The switch transistor is serially connected to the source of the pull-down transistor of the second inverter to selectively disconnect the electrical connection between the pull-down transistor and a ground. A write bit line is connected to one end of the write transistor. When writing the bit ""0"" into the cell, the power consumption can be significantly reduced as the write bit line won't need to be recharged and discharged. Especially because the switch transistor blocks the path of the second inverter to ground, the node level of the second inverter can be even easier to be pulled up when writing the bit ""0"".
Patent TW-I284307-B (TW)
Title: Electronic circuit and driving method thereof, electronic device, photoelectric apparatus and driving method thereof, and electronic machine
Inventor: MIYAZAWA TAKASHI
IPC: H03K17/687
Filed: 2003-10-03
Granted: 2007-07-21
Abstract: The present invention aims to provide an electronic circuit and a driving method thereof, an electronic device, a photoelectric apparatus and a driving method thereof, and an electronic machine that can prevent the non-uniformity of transistors' threshold voltages and minimize the number of required transistors. In the present invention, a driving transistor (Qd), a first switching transistor (Qs1), a second switching transistor (Qs2), a holding capacitor (Co), and an organic electroluminescent (EL) device (21) are applied to form a pixel circuit (20). Also, a control circuit (TS), connected with a potential control line (Lo) via a second electrode (E2) of the organic EL device (21) and used for setting the potential of the second electrode (E2) as either the driving voltage (Vdd) or the cathode voltage (Vo), is installed between the matrix-shaped pixel circuit (20) and a first and a second voltage supply cables (Va, Vb) when the pixel circuit (20) is placed along the right-most column direction on a display panel.
Patent TW-I222837-B (TW)
Title: Audio signal compression processing device to with reduced power consumption
Inventor: JANG YU-CHIN
IPC: G10L19/14
Filed: 2003-10-14
Granted: 2004-10-21
Abstract: The present invention is an audio signal compression processing device to reduce power consumption, which comprises at least a decoder and a system clock (CLK) generation unit to provide clock signal for the decoder. The decoder receives the audio data converted into bit stream, then it provides the encoding bit rate and sampling frequency of the audio data for the CLK generation unit in real-time, so that the CLK frequency sent by the CLK generation unit to the decoder varies in real-time with the varying encoding bit rate and the sampling frequency, so that the decoder can proceed decoding with clock signal having proper varying frequency, thus, the problem of low-power utilization efficiency when the decoder decodes with fixed CLK signal for decoding is solved.
Patent TW-I275467-B (TW)
Title: Apparatuses and methods for producing items, in particular compression moulded items
Inventor: BERGAMI STEFANO
IPC: B29C43/00
Filed: 2003-10-22
Granted: 2007-03-11
Abstract: An apparatus comprises a moulding unit having a punch and a mould cavity movable along a path between an open position in which said punch and said mould cavity are distanced apart from each other to receive a dose of plastics therebetween, and a closed position in which said punch and said mould cavity interact to form an item by pressing said dose, a supporting arrangement extending externally of said moulding unit being interposed between said punch and said mould cavity for supporting said dose. A mould compression item comprises a body formed from a plurality of plastic materials having different properties and/or appearance from one another.
Patent TW-I250680-B (TW)
Title: Holding device for a cell
Inventor: HAYASHIDA TAKAYUKI
IPC: H01M50/247
Filed: 2003-12-08
Granted: 2006-03-01
Abstract: A holding device with a cell terminal means is provided for reducing the deviation of the electrode of a cell and the electrode connecting piece in the machine and, for insuring sufficient discharge capacity of the cell. The disclosed machine receiving a power supplied from a cell comprises a cell terminal means 10 that contacts to an electrode of the cell housed within a cell chamber 11 to obtain a power from the cell, the cell terminal means 10 is formed by bending a plate-like element having conductivity elasticity into a hoop-like pattern, two ends 10a of the formed hoop-like plate element are positioned adjacently each other, two contact portion 10b are provided on the two ends 10a for contacting to the electrode of the cell, meanwhile, there is respectively an outward-cut portion 10c formed by the said plate element is existed where its position is more closer to the central portion than the said two ends 10a, therefore, after the cell being pushed to the contact portions 10b, the cell will be tightly clamped by the flexibility of the plate element.
Patent TW-I227938-B (TW)
Title: Self-aligned string/ground select gate structure and its contactless NAND-type flash memory array
Inventor: WU CHING-YUAN
IPC: H01L21/8247
Filed: 2003-12-30
Granted: 2005-02-11
Abstract: A self-aligned string/ground select gate structure of the present invention being formed in a string/ground select region comprises a pair of string/ground select-line regions being defined by a pair of first sidewall dielectric spacers formed over sidewalls of nearby first planarized oxide layers, a common-source conductive bus line being formed between a pair of second sidewall dielectric spacers and on a flat bed being alternately formed by a heavily-doped source diffusion region and an etched-back third raised field-oxide layer, and a plurality of common-drain conductive islands being formed between the pair of second sidewall dielectric spacers and on a plurality of heavily-doped drain diffusion regions. The self-aligned string/ground select gate structure is used to form a contactless NAND-type flash memory array of the present invention.
Patent TW-I240955-B (TW)
Title: Support structure of micro-sensing plate and its formation method
Inventor: CHOU FU-CHU
IPC: H01L21/027
Filed: 2004-01-13
Granted: 2005-10-01
Abstract: The present invention is related to a micro-sensing plate for micro-liquid droplet evaporation and temperature sensing apparatus. In particular, the present invention is related to the support structure of micro-sensing plate and its formation method capable of increasing structure strength and elongating the application lifetime. Wet etching solution is used to perform anisotropic etching so as to form ""-"" shape or ""+"" shape support structure on the bottom of micro-sensing plate when viewed downwards. Thus, the entire support structure is capable of effectively sustaining the collision of micro-liquid droplet added to the micro-sensing plate. Therefore, the micro-sensing plate is not destroyed due to the collision of micro-odor liquid droplet, and the sensed temperature is not thermally conducted through the support structure so as to assure the sensing accuracy and reach the purpose of increasing structure strength and increasing application lifetime.