baber/WOPTO huggingface dataset:
Patent TW-535297-B (TW)
Title: Semiconductor device, IC card and manufacturing method of the semiconductor device
Inventor: KATAYAMA KOZO
IPC: H01L27/115
Filed: 2001-11-23
Granted: 2003-06-01
Abstract: This invention is to realize writing by a plurality of bit units such as byte writing for a memory using the memory cell of a multi-storage shape. A memory gate electrode (33) is formed through a gate insulation film (31) and a gate nitride film (32) on a first semiconductor area (30), and first and second signal electrodes (38, 39) being first and second switch gate electrodes (36, 37) and a source and drain electrode are formed on both sides. The memory cell injects electrons from the source side to the gate nitride film to perform information storage. Since the memory gate electrode and the switch gate electrode are extended in the same direction, high voltage is applied on the memory gate electrode of the memory cell of a write object making the memory gate electrode and the switch gate electrode common, and even when writing and writing blocking voltage are given through the first and second signal electrodes are given, high electric field application is blocked by the switch gate electrode of a cut-off state in a writing non-selection memory cell.
Patent TW-I297405-B (TW)
Title: A method of making an improved liquid crystal device, and a device obtainde thereby
Inventor: SANDRINE LAMARQUE-FORGET
IPC: G02F1/139
Filed: 2001-12-12
Granted: 2008-06-01
Abstract: A method of making nematic liquid crystal devices where low energy zenith anchoring of the liquid crystal is obtained over confinement plates. A polymer or copolymer is deposited based on PVC onto a substrate. The polymer deposit is stabilized. An azimuth orientation is defined for the deposit to induce controlled azimuth anchoring of the liquid crystal.
Patent TW-503688-B (TW)
Title: Mending connection structure and its method for printed circuit board
Inventor: CHU CHIN-HUI
IPC: H05K7/00
Filed: 2001-12-14
Granted: 2002-09-21
Abstract: A kind of mending connection structure and its method for printed circuit board (PCB) include the following steps. (a) The anti-soldering coating layer on the upper surface of two opposite segments to be connected in the broken circuit of the PCB, and the anti-soldering coating layer between two opposite segments to be connected are stripped. (b) A copper wire with a matching length is placed to cross the upper surface of both segments to be connected and a discharging process of multi-point soldering is conducted between both segments to be connected so as to make both segments to be connected indent obliquely into the PCB base material and to make the copper wire bottom surface contact the upper surface of both segments to be connected and the base material while the upper surface of the copper wire is protruded from the broken circuit. (c) The protruded portion of the copper wire is polished and trimmed to make the broken circuit and the copper wire have the same flat upper surface. (d) An anti-soldering coating layer is supplemented to dispose on the exposed upper surface of the broken circuit and the copper wire. (e) A drying process is conducted. Thus, a circuit mending-connection structure fulfilling the present electric characteristic standard is manufactured and is capable of concealing the mended wire trace so as to obtain excellent flat appearance and assure the PCB product value.
Patent TW-I245233-B (TW)
Title: Method for locating a position in a computer terrain model
Inventor: WENG MING-FANG
IPC: G06T1/00
Filed: 2001-12-17
Granted: 2005-12-11
Abstract: This invention relates to a method for searching a position in a computer terrain model. It is employed in computer animation for searching a certain point (such as the contact point between a vehicle wheel and the ground) and a position in the computer terrain model. According to trench-type block division, the input terrain data is divided into plural sections to form a computer terrain model. By means of this way, the computer terrain model data can be divided into ""blocks,"" where ""trench regions"" are formed between blocks, and ""trench intersections"" are formed at intersections of the trench regions. While applying a testing point to the computer terrain model, different searching models are applied upon determining which specific region among the ""blocks"", ""trench regions"", or ""trench intersections"".
Patent TW-546658-B (TW)
Title: Non-volatile magnetic cache memory and method of use
Inventor: NAJI PETER K
IPC: G06F12/08
Filed: 2002-01-28
Granted: 2003-08-11
Abstract: A non-volatile, bistable magnetic tunnel junction cache memory (15) includes a cache tag array (16) and a cache data array (18). The cache tag array includes non-volatile magnetic memory tag cells (17) arranged in rows and columns. Each row of the tag array includes a word line and a digit line associated with each tag cell in the row. The cache data array includes non-volatile magnetic memory data cells (19) arranged in rows and columns. The rows of the data array correspond with the rows of the tag array and each row of the data array is magnetically associated with the word line and the digit line associated with each corresponding row of the tag array.
Patent TW-567414-B (TW)
Title: Dynamic built-in-self-skip method for shared memory fault recovery
Inventor: CHIN WEN-LONG
IPC: G11C29/00
Filed: 2002-01-29
Granted: 2003-12-21
Abstract: The present invention relates to the dynamic built-in-self-skip method for shared memory fault recovery. Under the architecture of the shared memory, entries of a free link table are one-to-one mapping to a packet buffer. First, we record a block of the free link table, which maps to a defect row of the packet buffer as fault, then those failure blocks should not be initialized in the free link table thus would not be used in switching activity. Therefore, the defect rows of the packet buffer, which corresponding to those failure blocks, thus do not permit of data reading and writing. In other words, we achieve the memory fault recovery by skipping the defect rows of the shared memory. Because the method does not depend on memory architecture and sophisticated repair algorithm, thus can easily accommodate into various system and enhance the chip yield.
Patent TW-562971-B (TW)
Title: Display device
Inventor: INADA TOSHIYA
IPC: G09F9/30
Filed: 2002-01-30
Granted: 2003-11-21
Abstract: In an active matrix LCD, a group of gate lines are formed with input wires (31a) and drive wires (31b), both wires being electrically connected each other. The input wires (31a) extend in the vertical direction which is the same as the data lines (32), while the drive wires (31b) extend in the horizontal direction. Thus, electrical connections between the data lines (32) and the data line IC chip (21), and electrical connections between the gate lines (31a, 31b) and the gate line IC chip (22) are provided at the top and the bottom of the display device, respectively, with the liquid crystal panel 10 being interposed therebetween. As a result, the device can be realized in which a width in the horizontal direction is narrower than the conventional device.
Patent TW-589333-B (TW)
Title: Electrically conductive organic compound and electronic device
Inventor: YOSHIDA HIROAKI
IPC: H01L29/786
Filed: 2002-03-28
Granted: 2004-06-01
Abstract: In an electrically conductive organic compound, a side chain portion simultaneously exhibiting refractive index anisotropy and sigma conjugated system electrical conductivity is bonded to a main chain portion exhibiting pi conjugated system electrical conductivity. The electrically conductive organic compound is used in the production of a constituent element for electronic devices.
Patent TW-543087-B (TW)
Title: Semiconductor device
Inventor: NATSUME HIDETAKA
IPC: H01L21/8244
Filed: 2002-04-16
Granted: 2003-07-21
Abstract: The present invention relates to a semiconductor device having: a gate electrode which is formed on a first conductive-type well set in semiconductor substrate, with a gate insulating film lying therebetween; an LDD structure in which, on either side of said gate electrode, there are formed an LDD region which is a second conductive-type dopant diffusion region with a low dopant concentration and a source/drain region which is a second conductive-type dopant diffusion region with a high dopant concentration; an interlayer insulating film to cover said gate electrode as well as said section of LDD structure; and contact sections which are formed by filling up openings made in said interlayer insulating film with a conductive metal; wherein: a contact section connecting to one side of the source/drain regions having a potential equal to a potential of said first conductive-type well is disposed so as to come into contact with the LDD region lying on this side of the source/drain regions; and a contact section connecting to the other side of the source/drain regions having a potential different from the potential of said first conductive-type well is disposed so as not to come into contact with the LDD region lying on this side of the source/drain regions. The present invention can develop technology capable to reduce the memory cell area while suppressing the generation of the leakage, and provide a semiconductor memory device of high integration with excellent element characteristics having a low standby current.
Patent TW-541746-B (TW)
Title: Carbonaceous material for nonaqueous electrolytic secondary cell and nonaqueous electrolytic secondary cell comprising the same
Inventor: TESHIMA MINORU
IPC: H01M4/587
Filed: 2002-04-18
Granted: 2003-07-11
Abstract: The carbonaceous material for nonaqueous electrolytic secondary cells of the present invention has the characteristic that a part or whole of the surface of nucleus particles of a carbonaceous material is coated with a surface portion of a carbonaceous material having a crystallinity than that of the nucleus particles, and that the open-circuit potential of the nucleus particles to Li/Li+ is nobler than that of the surface portion. A nonaqueous electrolytic secondary cell comprising the carbonaceous material is also disclosed. The nonaqueous electrolytic secondary cell has a high discharge capacity because it has the irreversible capacity. The nonaqueous electrolytic secondary cell is excellent in charging/discharging cycle characteristics and high-rate charging/discharging characteristics because precipitation of lithium metal is prevented.
Patent TW-567418-B (TW)
Title: Interrupt signal generating method and media access controller utilizing same
Inventor: CHEN YI-JENG
IPC: G06F13/24
Filed: 2002-04-24
Granted: 2003-12-21
Abstract: An interrupt signal generating method and a media access controller utilizing the method are disclosed. The media access controller is electrically connected between a host computer and an external network. The controller is characterized in comprising a timer for delaying a predetermined period of time. The method includes steps of: outputting an interrupt signal to the host computer; the host computer performing a designated interrupt service in response to the interrupt signal, memory space occupied by the completely transferred data packets being released in the designated interrupt service; and outputting another interrupt signal to the host computer after the interrupt service is finished and the predetermined period of delay time is up.
Patent TW-552821-B (TW)
Title: Oscillation prevention circuit
Inventor: SETO SHINJI
IPC: H04R25/00
Filed: 2002-05-09
Granted: 2003-09-11
Abstract: In the oscillation prevention circuit of the present invention, a charging switch circuit and a transfer switch circuit are provided in series between a first amplifier circuit and a second amplifier circuit, and a control circuit turns OFF the transfer switch circuit when the charging switch circuit is ON, and also turns OFF the charging switch circuit when the transfer switch circuit is ON, so as to prevent the two switch circuits from being turned ON at the same time.
Patent TW-I269988-B (TW)
Title: Information processing method, apparatus and system using nucleotide sequence-related information, and recording medium
Inventor: KATO TAKAMASA
IPC: G16H10/60
Filed: 2002-05-24
Granted: 2007-01-01
Abstract: A system for processing information for providing semantic information and/or information associated with the semantic information useful for each individual organism through effective utilization of differences in nucleotide sequence-related information among individual organisms is constructed. The method for processing information on a nucleotide sequence comprises: (a) receiving request information for an object and/or service; (b) obtaining positional information in accordance with the request information from a memory having positional information representing a position in a nucleotide sequence memorized therein; and (c) obtaining nucleotide sequence-related information, corresponding to the positional information obtained in (b) above, and obtaining semantic information implied by the nucleotide sequence-related information and/or information associated with the semantic information.
Patent TW-566040-B (TW)
Title: A method and system combining IP address broadcasting and video on demand to achieve asynchronous program viewing
Inventor: LIN CHI-TAI
IPC: H04N5/445
Filed: 2002-07-05
Granted: 2003-12-11
Abstract: The invention relates to a method and system combining IP address broadcasting and video on demand to achieve asynchronous program viewing, which comprises the following structure; the program broadcasting server provides at least one IP address in connection with Internet, in which the IP address is used to represent a corresponding program channel that receives connection of subscriber's electronic machine at viewing end and transmit program from the corresponding program channel of the IP address to the subscriber's electronic machine at viewing end. The video-on-demand server comprises the connection with the subscriber's viewing electronic machine at receiving end, the video-on-demand command packet from the subscriber's viewing electronic machine at receiving end to the video-on-demand server, and the processed and replied video-on-demand command packet responding to the video-on-demand server. The subscriber's viewing electronic machine utilizes the IP address provided by program broadcasting server or the corresponding program channel to the IP address to request connection to program broadcasting server to receive the broadcasted program through the IP address of program broadcasting server, broadcast the received program, issue and transmit video-on-demand command packet to the video-on-demand server, receive the processed and replied video-on-demand program and play the video-on-demand program.
Patent TW-I220058-B (TW)
Title: Method of removing HDP oxide deposition
Inventor: LI HUNG-WEN
IPC: H01L21/316
Filed: 2002-08-05
Granted: 2004-08-01
Abstract: A method of removing HDP oxide deposition comprises the steps of: (1) etching the HDP oxide deposition by in-side-out model, wherein the etching rate in the center of the substrate is faster than the edges of the substrate; (2) etching the HDP oxide deposition by out-side-in model, wherein the etching rate in the edges of the substrate is faster than the center of the substrate; and (3) removing the remaining silicon oxide layer using chemical-mechanical polishing (CMP). According to the method of the invention, the HDP oxide deposition can be planarized more uniform.
Patent TW-I237477-B (TW)
Title: Gateway control apparatus and method for controlling digital asynchronous half-duplex serial signal transmission
Inventor: LIN TSE-MING
IPC: G06F1/12
Filed: 2002-09-18
Granted: 2005-08-01
Abstract: A gateway control apparatus and method aim to control a signal transmission between an external RS232 interface and an external RS485 interface, or between two external RS485 interfaces. The apparatus at least comprises a phase processing unit, a RS232/TTL signal conversion interface and/or a RS485/TTL signal conversion interface. The present gateway control method is to make anti-phase and delay processes for TTL signals generated by the aforesaid signal conversion interfaces so as to control signal timing of driver enable (DE) of another RS485/TTL signal conversion interface. Therefore, peripheries which use the aforesaid external interfaces could use different baud rates and serial signal transmission protocols with different configurations.
Patent TW-563165-B (TW)
Title: Headlight lamp
Inventor: BEHR GERHARD
IPC: H01K9/08
Filed: 2002-09-19
Granted: 2003-11-21
Abstract: The invention relates to a headlight lamp whose base (9) has a plastic ring (13) in which there are embedded at least two contact lugs (13a-13c) designed as electric terminals. The contact lugs (13a-13c) are arranged in a common plane perpendicular to the ring axis (13) and in each case project in the radial direction from the plastic ring (13).
Patent TW-I250411-B (TW)
Title: Method, apparatus and system for memory access
Inventor: MAIYURAN SUBRAMANIAM
IPC: G06F12/08
Filed: 2002-09-27
Granted: 2006-03-01
Abstract: A request hint is issued prior to or while identifying whether requested data and/or one or more instructions are in a first memory. A second memory is accessed to fetch data and/or one or more instructions in response to the request hint. The data and/or instruction(s) accessed from the second memory are stored in a buffer. If the requested data and/or instruction(s) are not in the first memory, the data and/or instruction(s) are returned from the buffer.
Patent TW-563242-B (TW)
Title: Semiconductor memory device and manufacturing method thereof
Inventor: KAWANAKA SHIGERU
IPC: H01L27/11
Filed: 2002-10-22
Granted: 2003-11-21
Abstract: A semiconductor memory device. The semiconductor memory device includes a semiconductor layer, which is formed on an insulating film, and a plurality of memory cells, wherein the memory cell is formed with a first transistor and a second transistor connecting in series within the insulating film in a matrix formation. One end of the memory cell is connected to a bit line while another end is connected to a reference voltage. A memory cell array is formed. In addition, a manufacturing method thereof is disclosed. An oxide layer and a silicon active layer are formed on the silicon substrate. Element isolation regions, which isolate the silicon active layer to element formation region, are substantially formed on the same surface of the silicon active layer. By depositing a gate electrode material on the silicon active layer and then patterning, two gates of adjacent transistors are closely formed. Using the gate electrode as ion injection mask, predetermined ion is injected into the diffusion layer forming regions. The transistor pair is formed by activating the injected ions by a thermal process. Then, in the transistor pair, a first gate line connected to one gate electrode and a second gate line connected to another gate electrode are formed.
Patent TW-I220763-B (TW)
Title: Light bulb supporting stand especially for high-voltage halogen lamp
Inventor: HENRICI DIETER
IPC: H01R4/48
Filed: 2002-11-05
Granted: 2004-09-01
Abstract: A light bulb supporting stand especially for use in high-voltage halogen lamp includes an electric connection point, a supporting stand lump, a cap member, and a roughly U-shaped maintaining spring. The supporting stand lump is used to accommodate the socket of a light bulb, and is fabricated from high-temperature resistant material such as ceramic material, figurine or the like. The cap member roughly closes the conduction lead terminal side of the supporting stand lump until the conducting lead is put into the opening. The maintaining spring joins the light bulb socket and its one side is fastened in the supporting stand lump by using an inverse-hook shape snap-in tone sheet while the other side holds the cap member on the supporting stand lump. The cap member is manufactured by plastic with a high temperature resistant thermal plasticity such as PPS or LCP via an extremely accurate injection molding, and has the accommodation room to accommodate at least one part of connection points.
Patent TW-I221307-B (TW)
Title: Discharge lamp with external electrode
Inventor: TAKEDA YUJI
IPC: H01J65/00
Filed: 2002-11-25
Granted: 2004-09-21
Abstract: The present invention relates to a discharge lamp with an external electrode capable of enhancing the illumination amount and extending the lifespan thereof. A discharge lamp (12) with an external electrode includes electrodes (70)(80) formed on the outer periphery on the two ends, in the shaft direction, of a tubular glass lamp container (20) of a lamp (12) containing a discharge medium in the interior thereof. The electrodes comprise a conductive adhesive layers (32)(42) on the inner periphery of plastic foil-like metal conductors (31)(41). The conductive adhesive layer comprises one or more resins selected from a silicon resin, a fluoro resin, a polyimide resin, and an epoxy resin, and conductive particles distributed therein.
Patent TW-565666-B (TW)
Title: Vaned spool type directional control valve and four-way reversible valve for a cooling cycle system using the same
Inventor: LEE YUN-BOON
IPC: F15B13/043
Filed: 2003-02-25
Granted: 2003-12-11
Abstract: A vaned spool type directional control valve used to change a direction of motion of an actuator in an air pressure or oil hydraulic circuit includes a vaned spool having a valve portion and a vane portion integrally formed on a spool shaft. A chamber including a shaft support portion, a valve room, and a vane room is formed corresponding to the vaned spool. Main ports connected to the valve room in the chamber and two vane ports penetrating the opposed sides of the vane room are formed in the directional control valve. The directional control valve is of a pilot operated type so that flow of fluid in a main circuit can be changed by rotating the vaned spool using the pressure of a pilot fluid.
Patent TW-I227091-B (TW)
Title: Automatically program collecting and recording system
Inventor: LEE WEN-HSIANG
IPC: H04N5/7617
Filed: 2003-03-28
Granted: 2005-01-21
Abstract: This present invention relates to a program collecting and recording system which selects programs for watching later according to the selecting conditions from the program input signals with audio-video contents and program information. The audio-video contents and program information are received together and programs for watching later are selected according to the received program information without a program guide. Thus recording incompletely and recording unwanted programs, resulting in the asynchronous situation of the audio-video contents and the program guide, will not happen.
Patent TW-I248141-B (TW)
Title: Semiconductor device and manufacturing method therefor
Inventor: IHARA YOSHIHIRO
IPC: H01L23/528
Filed: 2000-12-14
Granted: 2006-01-21
Abstract: An undercut portion is provided in the side surface of a wiring pattern formed over the electrode terminal forming surface of a semiconductor element so that when the top of the electrode terminal forming surface of the semiconductor element is sealed, a semiconductor device can be obtained wherein that sealing layer exhibits high adhesion. The side surface of the wiring pattern having this undercut portion can be obtained by forming the wiring pattern by laminating metal layers of a plurality of metals, in a layered form, in such a way that the side surface of at least a metal layer A of that wiring pattern is formed as recessed inward in comparison with the side surface of a metal layer B formed on or above that metal layer A. More specifically, the undercut portion can be obtained by performing wet etching on this side surface.