baber/WOPTO huggingface dataset:
Patent JP-S56140301-A (JP)
Title: Optical device
Inventor: IGUCHI TOSHIYUKI
IPC: G02B17/08
Filed: 1980-04-04
Abstract: PURPOSE:To obtain an optical imaging device suitable for electronic copying machines etc. by integrally forming a prism lens array into a plate shape. CONSTITUTION:The prism lens array is formed by integrally forming a lens array 21 and a prism array 22 into a plate shape by using plastic materials or the like. This makes mass production possible and permits condierable reduction of costs. Also, the formed images similar to those by prism lenses are obtained and the focus is made longer. Hence, if an imaging device is formed by using this prism lens array, it is used for exposure optical systems in electronic copying machines of mirror scanning type, lens box scanning type or synchronous moving type. In this way, the optical imaging device suitable for the electronic copying machines etc. is obtained.
Patent JP-2000242397-A (JP)
Title: Receiving and delivering terminal
Inventor: BAN YASUHIRO
IPC: G06Q30/06
Filed: 1999-02-23
Abstract: PROBLEM TO BE SOLVED: To improve the easiness of use of a terminal for a reception and delivery system using a facility equipment remote control. SOLUTION: The receiving and delivering terminal 12 as a facility equipment remote control type receiving and delivering terminal is equipped with a receiving means 2 which receives information through a communication network 1, a transmitting means 7 which sends the information and an ordering means 5 which orders and requests an article, information or service, and also remotely controls facility equipment. The reception and delivery system having a database 15 where orders or the information from the receiving and delivering terminal 12 is received and totalized and a server 14 which distributes the information and delivers the ordered article according to the information from the ordering means 5 is provided with a registration means 10 which registers the order destination in the receiving and delivering terminal 12.  Consequently, the user can easily registers the order destination in the receiving and delivering terminal 12, so that the suability and serviceability are improved.
Patent JP-S54136253-A (JP)
Title: Adaptive type electronic hybrid circuit
Inventor: ARAZEKI TAKU
IPC: H04B3/03
Filed: 1978-04-14
Abstract: PURPOSE:To reduce unmatching to all the rotation at two line side, by constituting the circuit with the adaptive type impedance circuit changing its impedance according to the performance of the two line circuit and the adder. CONSTITUTION:The factor of -1/2 is multiplied with the four line side reception signal vr, it is added to the adder 20 with the signal v from the two line circuit, and the four line side transmission signal vs is outputted to the terminals 3 and 4. In this case, when only the four line side reception signal vr is present, no signal is appeared at the terminal 3 with matching condition. If the signal vs appears at the terminal 3, it is inputted to the adaptive type termination impedance circuit 50, and the constant in the circuit 50 is corrected so that the signal vs can be minimized to perform adaptive control with much better matching. When the signal v is present at other end of the two line side, the adaptive operation is stopped since correct correction can not be made. Thus, by using all the signals flowing to the line such as audio signal, the matching between the impedance of two line circuit and the termination impedance can be made.
Patent JP-S51119826-A (JP)
Title: A process and an apparatus for manufacturing superfine fibrous materia ls
Inventor: TAKEMURA TOORU
IPC: D04H1/4234
Filed: 1975-04-11
Abstract: PURPOSE: To manufacture superfine fiber with a fineness of ∥ 0.5 denier by the wet spinning method. 
     COPYRIGHT: (C)1976,JPO&Japio
Patent JP-S51119453-A (JP)
Title: Sealing method
Inventor: MIWA KAZUHITO
IPC: F16J13/02
Filed: 1975-04-12
Abstract: PURPOSE: A sealing device in which sealing ring is set without having oxide corrosion by isolating a sealing ring from gaseous substance in this true form through liquid. 
     COPYRIGHT: (C)1976,JPO&Japio
Patent JP-S55138274-A (JP)
Title: Semiconductor device
Inventor: OONO NORIO
IPC: H01L21/331
Filed: 1979-04-11
Abstract: PURPOSE:To obtain a transistor for the use of high output and high frequency by a method wherein the transistor is constituted on a base body of columnar semiconductor crystal to prevent the formation of inversion layer and to make the external base resistance and the external base-collector capacity to be small remarkably. CONSTITUTION:SiO2 films 25a1, 25b1 are formed selectively on a columnar n<+>- type Si substrate 21, and an n<->-epitaxial-layer 22 and polycrystalline Si layers 26a1, 26b1 are laminated on it. Then B ions are implanted, extended and diffused to form a p<+>-base-layer 23 and polycrystalline Si layers 26a2, 26b2 on the external circumference. The base body 21 is exposed by selective etching, and is covered with an insulating film 27. After base electrodes 29a, 29b are prepared by the selective etching of film 27, Au ions are implanted into the p<+>-base-layer 23, and are extended and diffused to form an n<+>-emitter-layer 24. Finally collector electrodes 30a, 30b and an emitter electrode 28 are attached. By this construction, the base layer 23 can be made to narrow layer, and as the base resistance is low and the capacity between external base and collector is remarkably small that its high frequency characteristic is satisfactory and easily be used for high power output by extending the length of emitter layer.
Patent JP-S59171138-A (JP)
Title: Manufacture of semiconductor device
Inventor: KAMOSHITA MOTOTAKA
IPC: H01L21/76
Filed: 1983-03-17
Abstract: PURPOSE:To obtain the substrate for a semiconductor device whereon the generation of dislocation on an element formation region is small in number and where there is no generation of white ribbon by a method wherein, when a thick SiO2 film is going to be formed by performing a selective oxidization on an Si wafer, a compound or a mixed substance consisting of Si, O2 and N2 is used as an insulating film which will be turned to a mask. CONSTITUTION:When thick field SiO2 films 25 and 26 are formed on the circumferential part of a P type Si substrate 21 using P<+> type regions 23 and 24 for prevention of inversion as an underlaid material, an SixNyOz film of 3,000Angstrom  in thickness is formed on the surface of the substrate 21 located between said regions 25 and 26. Subsequently, the unnecessitated film 22 is removed by performing an etching using an 85% H3PO4 solution, a thin gate oxide film 27 which is connected to films 25 and 26 is coated on the region where the film 22 was removed, and a gate electrode 28 is attached in the center part on the surface of the film 27. Then, an N type source region 29 and a drain region 30 are formed on both sides of the electrode 28 by performing an ion implantation using the electrode 28 as a mask, an aperture is provided on the film 27, and electrodes 31 and 32 are provided on said regions respectively.
Patent JP-2000237990-A (JP)
Title: Slitter machine
Inventor: SAWADA AKIRA
IPC: B26D1/14
Filed: 1999-02-23
Abstract: PROBLEM TO BE SOLVED: To facilitate the switching operation of an upper blade at the time of changing cutting width by providing a lower shaft with a holding spacer having a diameter smaller than that of a lower blade at a practical spacer side, and holding a waiting upper blade with the upper shaft at a position corresponding to the holding spacer. SOLUTION: In a lower shaft 2, a lower blade 21 formed of a recessed part having a pitch corresponding to a cutting width in a practical spacer 22 at a central part of the lower shaft 2, and a holding spacer 23 is provided at a side of the practical spacer 22. An upper shaft 1 has the corresponding number of round upper blades 11 to the maximum number of cutting row, and the corresponding number of effective upper blades 11a to the lower blade 21 among the upper blades 11 are fixed to a central part, and others are held as a waiting upper blades 11b. Diameter of the holding spacer 23 is formed smaller than that of the lower blade 21 so as to prevent a contact of a tip of the waiting upper blade 11b.  In the case of increasing the number of row to be cut, the corresponding number of the waiting upper blades 1b to the number of increase of the lower blade 21 are moved so as to increase the number of the effective upper blade 11a.
Patent JP-S63210879-A (JP)
Title: Copying method using diazo photosensitive paper
Inventor: KOMURA SHUJI
IPC: G03G21/04
Filed: 1987-02-26
Abstract: PURPOSE:To visualize a bit of true information when necessary by copying the true information with a toner same in color as a diazo copying paper, and again copying other dummy information on it with another toner same in color as the diazo copying paper in order to form a confidential document. CONSTITUTION:A first confidential image is visualized by using a diazo photosensitive paper as a transfer paper, transferring a first toner image corresponding a first true original image and same in color as this transfer paper on the transfer paper, then, transferring the toner image corresponding to a second dummy original image with the other toner different in color from the first image on said transfer paper, and fixing the second toner image, and further, color developing the first confidential original image through a diazo developing process. So long as considerably much attention is not paid, only a bit of second original dummy information is read, and the confidential true information can be read by said latter processing, thus permitting confidential secret documents to be easily formed by using the electrophotographic copying machine and the diazo photosensitive paper.
Patent JP-S62266100-A (JP)
Inventor: URAJIMIIRU MIHAIROUITSUCHI KAB
IPC: D06F43/02
Filed: 1987-02-27
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。
Patent JP-S55138236-A (JP)
Title: Manufacture of semiconductor device
Inventor: ODA MOTOHIRO
IPC: H01L21/02
Filed: 1979-04-12
Abstract: PURPOSE:To make it possible to operate accurate control on the threshold voltage of a semiconductor device and at the same time to increase pn voltage resistance in the boundary surface between the substrate and SiO2 film, by operating drying at a temperature below the boiling point of hydrofluoric acid after the surface of a semiconductor device is exposed by using hydrofluoric acid. CONSTITUTION:In the manufacturing processes of semiconductor devices, the process of exposing the substrate surface by using etching solution containing hydrofluoric acid or a water solution of hydrofluoric acid is frequently used. Subsequently, drying of the exposed substrate and its maintenance and operated at room temperature. But, since the substrate is generally exposed to a temperature above the boiling point, 19.4 deg.C, of hydrofluoric acid, its surface is activated. For this reason, drying and maintenance are operated at a temperature below the boiling point of hydrofluoric acid, 19.4 deg.C, so that no activated hydrofluoric acid is produced. By this, no variation occurs on the substrate surface, and a desired semiconductor device is obtained.
Patent JP-S59189057-A (JP)
Title: Die casting method
Inventor: NAKABAYASHI SHIGEMITSU
IPC: B22D17/22
Filed: 1983-03-17
Abstract: PURPOSE:To prevent displacement and breakage of a core and to provide a satisfactory casting by forming clearances into which a molten metal can flow in the fitting part between a core print and the receiving side on a casting die for die casting and applying a back pressure on the core print. CONSTITUTION:Suitable grooved clearances 24 are provided on the outside circumference of the core 14 in the fitting part between a die 5 and the core print 14 of a core 11 for a cylinder head, or suitable grooved clearances 24a are provided in the core print receiving part of the die 5. The molten metal charged into the die flows into these clearances 24 and applies a back pressure on the core print 14. The core print 14 is kept free from undue stress, so that the displacement and breakage of the core 11 are prevented and a satisfactory casting is obtd.
Patent JP-H05176160-A (JP)
Title: Facsimile equipment
Inventor: YUKI AKIRA
IPC: H04N1/38
Filed: 1991-03-11
Abstract: PURPOSE:To device a facsimile equipment such that a picture is recorded on recording paper in a larger size to the utmost and recording paper with no picture printed out thereon is not outputted. CONSTITUTION:Picture data sent through a modem section 2 are stored in a memory section 3. When a non-picture area resulting from scanning of the data being white level data of one line arranged continuously in the subscanning direction in picture data by one page stored in the memory section 3 is in existence at the start or the end of the picture data, a reduction rate by which the picture in the remaining picture area resulting from eliminating the non- picture area from the entire picture area for the picture data of one page is printed out largest on recording paper loaded to a printer means is set and commanded. A printer section 4 prints out the picture onto the recording paper with the set reduction rate.
Patent JP-S57159146-A (JP)
Title: Am stereo receiver
Inventor: YOKOYA SATOSHI
IPC: H04H1/00
Filed: 1981-03-26
Abstract: PURPOSE:To prevent the generation of burst tone, by supplying an intermediate frequency signal from a limiter to a PLL and applying the phase comparison output to a matrix circuit. CONSTITUTION:An intermediate frequency signal from a limiter 11 is applied to a phase comparison circuit 21, an oscillation output of a VCO22 is applied to the comparison circuit 21, and the comparison output Sc is applied to the VCO22 as a control signal through a low-pass filter 23 to constitute a PLL20. The cutoff frequency of the filter 23 is made sufficiently low, a damping factor of the PLL 20 is sufficiently increased to close the characteristic to the primary loop characteristic so that poles at high frequencies can be equal to the time constant tau of the preemphasis. The compared output Sc of the comparison circuit 21 is taken as a difference signal L-R and applied to a matrix circuit 8, and the sum signal L+R from a detection circuit 6 is applied to the matrix circuit 8 as it is.
Patent JP-S63214058-A (JP)
Title: Contact image sensor
Inventor: UNUMA MUNETOSHI
IPC: H04N1/028
Filed: 1987-03-02
Abstract: PURPOSE:To reduce the number of components and to make a device thin in wall by forming an image on an original through a transparent substrate, arranging a light emitting element on the same plane as an image sensor or its side face and using a refraction or reflecting means to illuminate the original face. CONSTITUTION:A luminous flux coming from the light emitting element 11 transmits through the transparent substrate 12 and reaches a boundary face 19 between the transparent substrates 12 and 14. By selecting the refractive index n2 of the substrate 14 to be larger than the reflective index n1 of the substrate 12, the light path 16 is refracted to the right and the light passes through the substrate 14 is radiated on an original 17. The image on the original 17 is formed on the photodetector 13 through a lens formed semishperically by a substance having a higher refractive index than that of the substrate 14 or a microlens 15 by a zone plate. Thus, the luminous flux of the element 11 is bent toward the original face by refraction to increase the illuminance of the original.
Patent JP-H07253909-A (JP)
Title: Microprogram verifying method
Inventor: SOMEYA SATORU
IPC: G06F9/22
Filed: 1994-03-16
Abstract: PURPOSE:To verify a general purpose microprogram which does not depend upon the specifications of a computer system. CONSTITUTION:A compiler 8 automatically generates various information files 9-14 from a specifications information file 7 described according to a microprogram specification description language file 6. A microinstruction simulator 1 after setting test environment with the information files 10 and 13 executes the microprogram 5 to be verified by simulation in source step units on the basis of the information files 9, 11, 12, etc., and gathers the execution results in a file 17. A specifications limitation checker 3 verifies violation with microinstruction specifications limitation information as to the execution results. An architecture simulator 2 simulates the architecture of the object computer system on a function level.
Patent JP-S63327-A (JP)
Inventor: SATEITSUSHIYU SHII SHIYAAMA
IPC: D06M101/16
Filed: 1987-03-02
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。
Patent JP-S56142510-A (JP)
Title: Optical imaging device
Inventor: MIYASHITA TAKAAKI
IPC: G03B27/50
Filed: 1980-04-07
Abstract: PURPOSE:To make optical axis alignment simple and lower cost by providing shield members which serve also as stops between respective lens elements of a three-dimensional lens array. CONSTITUTION:The image of an object 11 is reduced and formed onto the 2nd lens 13 by the 1st lens 12, and produces the unmagnified image 15 of an object 11 by the 3rd lens 14. Stop/shield members 16, 17 have the apertures including the entire ray on the inner side from the imaged ray on the outermost side of the lenses 12, 13, and their shapes are arbitrary. Such 1st lens array 21, stop/shield member 22, the 2nd lens array 23, and the 3rd lens array 24 are held on both side plates of a housing 25. The aperture 26 of the member 22 is circular on, for example, lens 21 side, and is hexagonal on the lens 23 side, the mid-part whereof is of a shape binding gradually in two stages. The apertures 28 and 26 are symmetrical. Thereby, the optical axis alignment is made simple and the cost is lowered.
Patent JP-H09217415-A (JP)
Title: Water catchment gutter construction equipped with oil content elimination function
Inventor: MIYAUCHI YUJI
IPC: E03F5/16
Filed: 1996-02-08
Abstract: PROBLEM TO BE SOLVED: To provide water catchment gutter construction equipped with oil content elimination function capable of directly resolving oil content in a water catchment gutter by making use of fat spliting bacteria to eliminate and lightening a burden on a grease trap or an industrial water treatment device connected to the lower stream side. SOLUTION: A circulating channel going the round of a water catchment gutter construction is formed by partitioning one water catchment gutter with both closed ends with a partition plate 4, a drain outlet 5 is formed in a proper position of the circulating channel and, at the same time, a sheathing board with specific height is installed in a boundary section between the drain outlet 5 and circulating channel. A water current generation device 7 giving a water current circulating in the direction of one way is provided in a proper position of the circulating channel and, at the same time, a bacteria supply device 8 for supplying fat spliting bacteria to the circulating channel is provided.
Patent JP-S55137106-A (JP)
Title: Lactone group-containing hydroxystyrene polymer and production thereof
Inventor: SHIMIZU TAKEO
IPC: G01N31/22
Filed: 1979-04-14
Abstract: PURPOSE:To obtain title polymer suitable for the separation and concn. of various metal ions and for the concn. and purification of fruit juice, milk, etc., by a method wherein a specified hydroxystyrene polymer is reacted with phthalic anhydride and a phenol in the presence of an acid catalyst. CONSTITUTION:A hydroxystyrene polymer having a repeating unit of formula I (wherein m is an integer; n is zero or an integer; D is comonomer) is reacted with phthalic anhydride and a phenol of formula II (wherein R is H, alkyl) in the presence of an acid catalyst to obtain title polymer having a repeating unit of formula III (wherein x is zero or an integer less than m). As this polymer has radicals contg. lactone gp. on its side chains, this polymer is characterized in that ring cleavage and ring formation reversibly take place by the pH of the reaction system with which the polymer is contacted, and thereby active transportability to ion is remarkably developed.
Patent JP-S59171903-A (JP)
Title: Liquid detecting optical fiber
Inventor: ITOU KATSUJI
IPC: G01N21/41
Filed: 1983-03-18
Abstract: PURPOSE:To obtain a liquid detecting optical fiber which shortens the detection time of a liquid without degrading the mechanical strength by providing a porous clad on the outside circumference of a core. CONSTITUTION:In a liquid detecting optical fiber 1, the outside circumference of a core 2 consisting of quartz glass or the like is coated with a porous clad 3. The porous clad 3 is formed with foamed plastics with connected bubbles, a net of fine meshes consisting of fibers, a nonwoven faleric, or the like. It is desirable that a refractive index n1 of the core 2 is higher than a refractive index n2 of the porous clad 3; and though the core 2 is brought into contact with air in parts of pores of the porous clad 3, the light is hardly leaked in a normal state because air has a refractive index lower than that of the core 2. In case that there is a probability that the contacting of the core 2 with air causes characteristic degradation, a thin film coating 2A consisting of materials whose refractive index is higher than that of the porous clad 3 is provided on the surface of the core 2. this liquid detecting optical fiber is laid along a place where the leakage of a liquid should be detected.
Patent JP-H09246588-A (JP)
Title: Semiconductor waveguide-type photodetector
Inventor: KATO KAZUTOSHI
IPC: H01L31/10
Filed: 1996-03-04
Abstract: PROBLEM TO BE SOLVED: To obtain a semiconductor waveguide-type photodetector which restrains a dark current from being increased by a method wherein a first semiconductor layer which is of a first conductivity type as well as a second semiconductor layer and a third semiconductor layer which are of a second conductivity type are laminated sequentially so as to form a high mesa structure, impurities are diffused to a desired depth from the side face of high mesa layers at the second and third semiconductor layers and a diffusion region of a first conductivity type is formed. SOLUTION: An n-type InGaAsP layer 103 and an n-type InP layer 105 are formed on a p-type InP substrate 101, an etching operation or the like is performed, and the n-type InGaAsP layer 103 and the n-type InP layer 105 are shaped to be a high mesa. Then, an SiNx film 107 is formed on the surface of the n-type InP layer 105, and the SiNx film 107 is used as a mask so that a Zn diffusion region 106 is formed on the side of the n-type InP layer 105, on the side face of the high mesa and on the surface of the substrate 101. Then, the SiNx film 107 is removed, an n-type ohmic electrode 109 is formed on the n-type InP layer 105, and a p-type ohmic electrode 108 is formed on the substrate 101. A part near one side face to be used as a slab-type light incident edge is cleaved, and a reflectionless film 110 composed of SiNx is formed.
Patent JP-H05243195-A (JP)
Title: Method of making beveled part of si wafer mirror surface and device thereof
Inventor: SAKOU YAMATO
IPC: H01L21/304
Filed: 1992-03-03
Abstract: PURPOSE:To process a beveled plane of an Si wafer into a mirror surface without oxidizing a polished surface by a method wherein the beveled part of the wafer is oxidized by ozone and then etched with hydrofluoric acid and acetic acid into a mirror surface. CONSTITUTION:Beveled Si wafers 5 are pressed together from their lateral sides by pressing plates 6 and dipped into the mixed solution 3 of hydrofluoric acid and acetic acid in a tank 10, a Teflon formed body 4 is placed under the beveled Si wafers 5, and the Si wafers 5 are exposed to ozone bubbles generated from an ozone generator 1 through the Teflon formed body 4. That is, the end faces 7 of the wafers 5 are oxidized with ozone gas without oxidizing the polished surfaces of the Si wafers 5 and etched with the mixed solution 3 into mirror surfaces. By this setup, the beveled part of an Si wafer can be processed into a mirror surface high in efficiency producing no unevenness of etching.