baber/WOPTO huggingface dataset:
Patent TW-326430-B (TW)
Title: Retortable container
Inventor: FUKUWARA AKIO
IPC: B65D35/44
Filed: 1997-07-10
Granted: 1998-02-11
Abstract: A retortable container (1), which comprises a container body (10) having a neck (13) made of a thermoplastic synthetic resin, in which the neck (13) is installed with threads (16); and comprises a cap (20) made of a thermoplastic synthetic resin, in which the cap (20) is installed with threads (23) through which it engages with the neck (13); in which the neck (13) comprises an engagement ridge (19), of an outer diameter D1 smaller than an inner diameter D2 of a thread (23) of a cap (20), formed on the outer circumference of the neck (13) near the top face thereof installed with a distribution hole (15); and the cap (20) comprises an overall engagement portion (26), being formed integrally therewith on the bottom surface of the top wall (21); the overall engagement portion comprises an engaging hook (26a), capable of engaging with the engagement ridge (19) of the neck (13) under the condition that engagement of the threads (16) of the neck (13) and the threads (23) of the cap (20) is completed.
Patent TW-411255-B (TW)
Title: Process for manufacturing a flavouring agent for a beverage
Inventor: MEISTER NIKLAUS
IPC: A23L9/20
Filed: 1997-09-24
Granted: 2000-11-11
Abstract: Process for manufacturing a flavouring agent for beverages, in particular coffee or tea, the base of which is sweetened evaporated milk, offered in the form of small pots, wherein the ratio of fats to non-fat solids is adjusted, a flavouring is added and the base is sterilized by UHT.
Patent TW-367279-B (TW)
Title: Manufacturing method for steel door frame
Inventor: Zhuang sen-rong
IPC: B23P23/06
Filed: 1997-12-23
Granted: 1999-08-21
Abstract: A kind of manufacturing method for steel door frame which includes the preparing, feeding, adjusting, oiling, punching, roller forming, straightening, cutting and finishing that form the left and right pillars and up girder and to assembly those said parts. The assemble process utilizes four raised flakes on the left pillar to plug in to four positioning holes on the left of up girder and bend those flakes for positioning and so as for the right pillar, then complete the integrated door frame. The invention provides the raised flakes and positioning holes for assembly without the welding process that is more convenient for assembly and avoid the shedding and corrosion at the welding portions. And the assembly process can also be done on site associated with the concrete process that can save the transportation cost and be more convenient.
Patent TW-457586-B (TW)
Title: Forming a protective film in a semiconductor device
Inventor: KIM SUN-OO
IPC: H01L21/31
Filed: 1997-12-27
Granted: 2001-10-01
Abstract: The present invention discloses a method of forming a protective film which can decrease a parasitic capacitance between metal wires and improve weak portion thereof and comprises the steps of forming metal wires of a substrate, depositing a silicon oxide film on the substrate including the metal wires, forming a SOG film on the silicon oxide film, hardening the SOG film and then forming a silicon nitride film on the SOG film. The SOG film is formed of a material having a lower dielectric constant than that of the silicon oxide film, and formed of one of methyl-silsesquioxane and hydrogen-silsesquioxane.
Patent TW-353044-B (TW)
Title: Flux composition for soldering aluminum material and soldering method of aluminum material
Inventor: KOJIMA MASAHIRO
IPC: B23K1/20
Filed: 1998-05-05
Granted: 1999-02-21
Abstract: A flux composition for soldering aluminum materials containing 0.5-25 weight parts of a high molecular compound containing an alkylene oxide repeating unit and having an average molecular weight of 50,000-5,000,000, 5-30 weight parts of fluorides line flux, and balance of water.
Patent TW-383477-B (TW)
Title: Semiconductor device
Inventor: NAKAMURA TAKASHI
IPC: H01L23/367
Filed: 1998-05-19
Granted: 2000-03-01
Abstract: The invention relates to a kind of semiconductor device. It includes the following steps: to employ die-bond technique to attach semiconductor chip on the material strip; forming several power supply electrodes on the semiconductor chips and forming several signal electrodes for signal exchange under the semiconductor chips; the semiconductor chips and material strip are packaged in the package and the formed power supply wiring outside the package is connected to power supply electrode; therefore, the method can produce semiconductor device for effective thermal dissipation of heat generated in the semiconductor chip and increasing the number of signal electrodes.
Patent TW-376612-B (TW)
Title: System and method for interfacing diversely controlled devices to a bus connector having a common signal format
Inventor: COOPER GERSHON N
IPC: H04L29/10
Filed: 1998-06-26
Granted: 1999-12-11
Abstract: A system for connecting a plurality of cellular telephones, each responsive to device-specific command signals for its operation, to an automotive electronics and communications system through a bus connector having a known universal signal format, includes a docking station having a cradle member shaped for receiving at least one cellular telephone. An interface unit contains the hardware and firmware drivers necessary for controlling the selected cellular telephone. A user selected cable having a specific signal path configuration selects the needed drivers. A second cable connects the interface unit with the bus connector for communicating signals therebetween.
Patent TW-477908-B (TW)
Title: Active matrix electro-optical device
Inventor: YAMAZAKI SHUNPEI
IPC: G02F1/136
Filed: 1996-10-01
Granted: 2002-03-01
Abstract: In an active matrix electro-optical device, a plurality of pixels connected to thin film transistors (TFTs) are arranged in an active matrix form in a pixel portion, and driven by a driver circuit portion. The pixel portion and the driver circuit portion are formed on one of a pair of insulating substrates. A liquid crystal material is interposed between the insulating substrates. And black matrix material made of an organic resin is formed over the one insulating substrate in which the driver circuit portion has been formed. And flat film is formed on the black matrix material.
Patent TW-408304-B (TW)
Title: DVD audio disk, and DVD audio disk reproducing device and method for reproducing the same
Inventor: HEO JUNG-KWON
IPC: G11B20/10
Filed: 1998-10-08
Granted: 2000-10-11
Abstract: A DVD audio disk having information areas in which corresponding audio title information management tables are stored, and corresponding data areas in which audio packs of a linear PCM mode are stored, wherein a first, second or third number of quantization bits, a corresponding first, second or third sampling frequency, and information relative to the number of audio channels are all recorded on each audio title information management table. The audio pack includes audio packets made up with the number of quantization bits, the sampling frequency and the information relative to the number of channels all recorded on the title management table, the audio packets further containing audio data.
Patent TW-493235-B (TW)
Title: Heat treatment method for a silicon monocrystal wafer
Inventor: ABE TAKAO
IPC: H01L21/324
Filed: 1998-12-09
Granted: 2002-07-01
Abstract: There is disclosed a heat treatment method for a silicon monocrystal wafer comprising the steps of heat-treating in a reducing atmosphere a silicon monocrystal wafer manufactured by growing a silicon monocrystal ingot by Czochralski method wherein a wafer obtained from a silicon monocrystal ingot having oxygen concentration of 16 ppma or less which is manufactured by pulling at a growth rate of 0.6 mm/min or more, and in which COPs exist in high density is subjected to anneal heat treatment at 1200 DEG C or above for one second or more through use of a rapid heating/rapid cooling apparatus, or at 1200 DEG C or above for 30 minutes or more through use of a batchwise heat treatment furnace, and no defect silicon monocrystal wafer obtained with the method. There can be manufactured a silicon monocrystal wafer in which crystal defects existing on the surface of the wafer or at the surface layer portion thereof are minimized, and there can be provided a silicon monocrystal wafer for a device which is excellent in electric characteristics such as oxide dielectric breakdown voltage and electrical reliability.
Patent TW-407372-B (TW)
Title: The manufacture method of cylindrical capacitor
Inventor: HUNG YUN-DING
IPC: H01L21/768
Filed: 1998-12-11
Granted: 2000-10-01
Abstract: A manufacture method of cylindrical capacitor; firstly, provide a semiconductor substrate having a formed first electric-conductive layer on it. Then, form the insulating layer on the first electric-conductive layer, and define its pattern, the material of the insulating layer could be silicon nitride. Then, form the spacer on the sidewall of the insulating layer, the material of the spacer is different from that of the insulating layer, and the material of the spacer is also different from that of the first electric-conductive layer. Proceed etching step using the insulating layer and the spacer as the mask to etch the first electric-conductive layer to a certain depth. Next, remove the insulating layer, and proceed with etching step while using the spacer as the mask to continue etch the first electric-conductive layer to form a cylinder type structure. Next, remove the spacer and form the dielectrics and the second electric-conductive layer in order to complete the capacitor structure of this invention.
Patent TW-440774-B (TW)
Title: A method for expanding multinational characters display
Inventor: CHEN TONY S
IPC: G06F17/30
Filed: 1998-12-18
Granted: 2001-06-16
Abstract: It is a method for expanding multinational characters display which especially means a method able to display multinational characters in the OS platform of singular language. The character display processing technology mentioned in this invention is about getting characters corresponding to the index sequence document in the specific character database through languages selected by users of the public interface to display the characters of related languages in the document, and to insert any new interface language without modifying procedures of the public interface.
Patent TW-460521-B (TW)
Title: Process for the preparation of a polyamide nanocomposite composition
Inventor: VAN GEENEN ALBERT ARNOLD
IPC: C08J3/20
Filed: 1998-12-19
Granted: 2001-10-21
Abstract: The invention relates to a process for the preparation of a polyamide nanocomposite composition by mixing in the melt phase a polyamide, a solid substance composed of anisotropic particles with a high aspect ratio and a liquid, the liquid being added to and subsequently mixed with a melt comprising at least the polyamide. Preferably water is chosen as the liquid. The invention also relates to a polyamide nanocomposite composition obtained by mixing in the melt phase a polyamide and a non-swollen solid substance composed of particles with a high aspect ratio. The polyamide nanocomposite compositions obtained with the process according to the invention and the polyamide nanocomposite compositions according to the invention can be used in all moulded parts which can be produced with a polyamide composition and which demand particularly good mechanical properties, for example for use in the motor compartment of a vehicle, for casings and for connectors.
Patent TW-464582-B (TW)
Title: Welding wire and method of making same
Inventor: BLANKENSHIP GEORGE D
IPC: B23K35/36
Filed: 1999-02-12
Granted: 2001-11-21
Abstract: A welding wire for use in electric arc welding and method of making same, wherein the wire has an effective outer diameter and comprises a length of solid metal formed into a series of distinct segments each having a selected volume and joined together interconnecting bridging elements with the cross sectional area of the solid metal at said segments being greater than the cross sectional area of the solid metal at the bridging elements.
Patent TW-408376-B (TW)
Title: Method for manufacturing metal oxide semiconductor
Inventor: LI JUNG-SHIUNG
IPC: H01L21/28
Filed: 1999-03-26
Granted: 2000-10-11
Abstract: A method for manufacturing metal oxide semiconductor provides a substrate and forms a gate electrode on the substrate, and further forms a first doped area on the lateral sides of the gate electrode on the substrate, and then forms a dielectric layer on the sides of the gate electrode in the substrate. Use the spacer as the mask to patterning the dielectric layer, and then continue to remove the spacer. The exposed dielectric layer serves as the protective layer at the corner of the gate electrode and the first doped area; then, form a metal silicide layer on the exposed surface of the first doped area and the gate electrode.
Patent TW-404128-B (TW)
Title: Program guide system with flip and browse advertisements
Inventor: KNUDSON EDWARD B
IPC: G06F13/00
Filed: 1999-04-29
Granted: 2000-09-01
Abstract: An interactive television program guide is provided in which advertisements may be displayed in program listings display regions on program guide screens. The program listings display regions may be browse displays or flip displays. The program guide screens contain video for the current channel to which the user is tuned. The program listings display regions containing the advertisements may be overlaid on top of the current channel. Alternatively, the video for the current channel may be provided in a reduced-size video window. The advertisements may contain video. The advertisements may be used to promote television programs and conventional goods and services. Advertisements may be selectable. When a user selects an advertisement, the program guide provides the user with an opportunity to order products or services, request information, set reminders for upcoming programs, view program descriptions, record programs, or take other such actions.
Patent TW-526552-B (TW)
Title: Post-etching alkaline treatment process
Inventor: METTIFOGO GIANPAOLO
IPC: H01L21/306
Filed: 1999-05-25
Granted: 2003-04-01
Abstract: The present invention is directed to a process for removing aluminum contamination from the surface of an etched semiconductor wafer. The process is carried out by first lapping a semiconductor wafer in a lapping slurry containing aluminum, etching the wafer, and finally immersing the wafer in an aqueous bath, the bath comprising an alkaline component and a surfactant.
Patent TW-503194-B (TW)
Title: Convexity adjustable support, in particular, lumbar support for seats and stretchers of all kinds
Inventor: KLINGLER KNUD
IPC: B60N2/90
Filed: 1999-06-02
Granted: 2002-09-21
Abstract: Convexity adjustable support, in particular, lumbar support for seats and stretchers of optional type, including a resilient convexity inducing element and an adjustment means for the setting and adjusting of the convexity of the convexity inducing element, characterised, in that the convexity inducing element comprises an essentially sheet-like archable frame member (5; 5') and at least one panel (8; 27, 28) connected thereto along regions of small surface area and having two free resilient ends and is punched from a sheet-like resiliently flexible material in a single operating step.
Patent TW-410432-B (TW)
Title: Method for forming bonding pad
Inventor: LU SHR-WEN
IPC: H01L21/768
Filed: 1999-06-14
Granted: 2000-11-01
Abstract: A method for forming a bonding pad is provided. The method includes forming a first metal layer on a semiconductor substrate with integrated circuits. A second metal layer is formed on the first metal layer, wherein the second metal layer includes only one kind of metal material. An anti-reflective layer is formed on the second metal layer. A dielectric layer for protecting is formed on the anti-reflective layer. Finally, the dielectric layer and the anti-reflective layer are defined by mask for being etched off so as to form an etching opening for forming metal interconnect, whereby the corrosion of the first metal layer is reduced by the protection of the second metal layer.
Patent TW-429709-B (TW)
Title: Asynchronous transfer mode multiplexer for interactive multimedia applications
Inventor: JANG LU-MING
IPC: H04L12/00
Filed: 1999-06-17
Granted: 2001-04-11
Abstract: An asynchronous transfer mode (ATM) multiplexer for interactive multimedia applications employs an ATM multiplexer to provide the critical equipment of the multimedia on demand (MOD) system in the interactive multimedia services for subscribers. In a MOD system, set-top-box for subscriber is provided to go through the ADSL terminal unit-remote. The traditional telephony twisted pair copper wire is connected to the central-office and the ADSL terminal unit-central (ATU-C) converts the ASDL signal into ethernet 10 BASE-T transmission interface signal, further connecting to an ATM broadband multiplexer, AMUX. After the multiplexing conversion processing, connect to ATM switch via synchronous optical network (SONET) with the interface format of OC-3c optic signal and perform high speed full duplex data communication with the remote server (ex. video server can provide network cinema, karaoke, instant TV and data server can provide high speed internet access services).
Patent TW-443060-B (TW)
Title: Method and apparatus for reducing start-up latency in a data transmission system
Inventor: CHU KEITH T
IPC: H04L5/14
Filed: 1999-07-08
Granted: 2001-06-23
Abstract: A modem system start-up routine is performed in an improved manner such that information related to the exchange of the operational capabilities of the modem devices is transmitted at a higher data rate than prior art systems. A transition protocol is utilized to enable the modem system to seamlessly shift operating modes during the start-up routine. An initial data rate is utilized to transmit initial capabilities exchange data near the beginning of the start-up routine. Next, an initial training procedure is conducted to train the receive modem for operation at an intermediate data rate. The exchange of operational capabilities occurs at this intermediate data rate. Eventually, the modem system shifts to the primary data rate utilized during the normal data transmission mode. A final training procedure is performed to tune the receive modem in a more precise manner in response to the primary data rate. The overall effect of the improved start-up routine is a reduction in the start-up latency time.
Patent TW-443011-B (TW)
Title: Method for making an electrical connector
Inventor: HUANG WAYNE
IPC: H01R43/01
Filed: 1999-07-20
Granted: 2001-06-23
Abstract: Method for making an electrical connector, comprising the following steps. Step1: defining first carrier and first terminal sections along a first material sheet. Step 2: defining at least a first pilot hole on the first carrier section and at least two first terminals on the first terminal section. Each first terminal has a body portion extending between front an rear contact portions. Step 3: forming a first bridging rib around the first terminals aligned by the first carrier section through a first inserting mold. Step 4: making a second insert molding around the body portions of the terminals supportably aligned by the associated first bridging rib.
Patent TW-464824-B (TW)
Title: Keyboard device having a resin-coated connector held in improved fixed state
Inventor: NISHIJIMA AKIO
IPC: G06F1/18
Filed: 1999-07-29
Granted: 2001-11-21
Abstract: A keyboard device is disclosed which can improve a fixed state of a connector coated with a soft resin and can reduce the number of components without deteriorating the structural strength of the keyboard device. The keyboard device comprises a keyboard body 4 having a plurality of key switches 41, a connector C coated with a soft resin and capable of being connected with an external device, and upper and lower cases 2, 5 which cover the keyboard body 4 and the connector C. The thickness W1, W2 of connecting portions C3, 45 provided for connecting the connector and the keyboard body to the same positions of the upper and lower cases, and the length W3 from the tip 52a of a fitting portion 52 provided in the upper case 5 and fitted through through-holes C2, 46 up to a clamp width setting portion 53 provided on a base end side of the fitting portion 52, are set equal to each other.
Patent TW-451260-B (TW)
Title: Thermopile sensing element and fabrication method thereof
Inventor: DU CHEN-HSON
IPC: H01L21/00
Filed: 1999-08-23
Granted: 2001-08-21
Abstract: A thermopile sensing element and the fabrication method thereof are provided in the present invention. The sensing elements use the polysilicon and titanium or aluminium silicon copper as the thermopile materials and form pins. The characteristics of the manufacturing process are: using the materials with lower thermal conductivity, such as aluminium, titanium, aluminium alloy or titanium alloy, to manufacture the conductive wire; winding the conductive wire to form the curved structure, thereby increasing the length of the conductive wire to reduce the thermal conductivity; and using the front-side silicon type etching technique to empty the silicon substrate under the structure in the post process, which is adopted due to the less area demanded and capable of decreasing the unit area of the thermopile sensing elements to increase the throughput of unit silicon wafer. Additionally in the present invention, a resistor can be made on the float plate as a heater to electronically calibrate the measurement.
Patent TW-445301-B (TW)
Title: A shadow mask, a method of forming the shadow mask, and a method of manufacturing a semiconductor device using the shadow mask
Inventor: FUKUZAWA SHINICHI
IPC: H01L27/32
Filed: 1999-10-21
Granted: 2001-07-11
Abstract: A shadow mask is applicable to forming a minute film on a substrate by evaporation or the like. The shadow mask comprises a support film (110), a stopper film (120), a polyimide film (130) and a thin plate (140). The support film (110) has enough mechanical strength necessary for forming predetermined sized holes. The stopper film (120) is formed on the support film (110) and is used as an etching stopper while forming the holes in the support film (110). The polyimide film (130) is formed on the stopper film (120) and bonds the stopper film (120) to the thin plate (140). The thin plate (140) is formed on the polyimide film (130) and is made of a material which is the same as that of the substrate on which the film is formed or a material whose thermal expansion rate is substantially the same as that of the substrate. Openings (150) of the shadow mask are formed at predetermined regions through the support film (110), the stopper film (120), the polyimide film (130) and the thin plate (140). Each of the openings (150) has a tapered portion (150A) and a projected portion (150B). The tapered portion (150A) is formed through the support film (110), the stopper film (120), the polyimide film (130) and a part of the thin plate (140), and is broadened to the support film (110). The projected portion (150B) is a part of the thin plate (140) projecting toward the center of the tapered portion (150A). During the step of forming a film on the substrate, the shadow mask is arranged so that the thin plate (140) faces the substrate.