Patent SG-11201808732R-A (SG)
Title: Micromachined bulk acoustic wave resonator pressure sensor
Inventor: TADIGADAPA SRINIVAS
IPC: G01L9/00
Filed: 2017-05-30
Abstract: INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property 1111111011110111011111111010111110 0111111111011111011111011111111011111 Organization International Bureau (10) International Publication Number (43) International Publication Date .....0\"\"\" WO 2017/210184 Al 07 December 2017 (07.12.2017) WIP0 I PCT (51) International Patent Classification: (74) Agent: MILLS, Steven M. et al.; Burns & Levinson LLP, G01L 9/00 (2006.01) 125 Summer Street, Boston, Massachusetts 02110 (US). (21) International Application Number: (81) Designated States (unless otherwise indicated, for every PCT/US2017/034987 kind of national protection available): AE, AG, AL, AM, (22) International Filing Date: AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, 30 May 2017 (30.05.2017) CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, (25) Filing Language: English HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, (26) Publication Language: English KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, (30) Priority Data: PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, 62/345,180 03 June 2016 (03.06.2016) US SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, 15/602,758 23 May 2017 (23.05.2017) US TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (71) Applicant: MKS INSTRUMENTS, INC. [US/US]; 2 (84) Designated States (unless otherwise indicated, for every Tech Drive, Suite 201, Andover, Massachusetts 01810 kind of regional protection available): ARIPO (BW, GH, (US). GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, (72) Inventors: TADIGADAPA, Srinivas; 1417 Ridge Mas-TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, ter Drive, State College, Pennsylvania 16803 (US). GOEL, EE, ES, FL FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, — Nishit; 801 Southgate Drive, Apt. A4, State College, Penn- MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, sylvania 16801 (US). BART, Stephen; 15 Rangeley Road, — TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, = West Newton, Massachusetts 02465 (US). KM, ML, MR, NE, SN, TD, TG). (54) Title: MICROMACHINED BULK ACOUSTIC = = = = = = 304 = = 306 Pressure Applied WAVE RESONATOR AP) PRESSURE SENSOR 304 - 360 — isiiimp = = 32O , = = 396 1 392 '362 = 318 32 - Fig. 38 .4 2 (57) : A pressure sensor includes a piezoelectric substrate having a w w the piezoelectric substrate at the periphery of the planar structure of the piezoelectric 1-1 © substrate has a first region having a first characteristic thickness adjacent to Il characteristic thickness at a middle region of the substrate. The second characteristic ei --.... ness such that the planar structure in the second region is displaced relative to the neutral axis of the planar structure such that while IN undergoing bending the second region has either mostly compressive or mostly 1-1 0 ei 366 324 generally planar structure and an anchor location fixing substrate. The planar structure of the piezoelectric the anchor location, and a second region have a second thickness is less than the first characteristic thick- tensile stress. O [Continued on next page] WO 2017/210184 Al MIDEDIM00010101110101110010i0101ROEIDEMOVOIS Published: — with international search report (Art. 21(3))