baber/WOPTO huggingface dataset:
Patent TW-235296-B (TW)
Inventor: GISELA LORENZ
IPC: C07D413/06
Filed: 1992-09-16
Granted: 1994-12-01
Abstract: Dihydropyrans of the formula <IMAGE>  in which   U denotes =CH-OR<5>, =CH-SR<5>, =CH2, =CH-R<5>, =CH-halogen or =N-OR<5> and A denotes a single bond or -CHR<6>-, -(CHR<7>-CHR<6>)n-, -(CR<21>=CR<20>)m-CR<7>=CR<6>, -C IDENTICAL C-, -O-CHR<6>-, -S-CHR<6>-, -NR <18 -CHR<6>-, -C(=O)-O-CHR<6>- or -R<19>C=N-O-CHR<6>-, B denotes H, optionally substituted alkyl, optionally substituted alkenyl, optionally substituted alkynyl, optionally substituted cycloalkyl, optionally substituted aryl, optionally substituted hetaryl, optionally substituted heterocyclyl or optionally substituted cycloalkenyl,   R<1> denotes H, O-R<8> or optionally substituted O-aryl,   R<2> denotes R<9> or optionally substituted aryl, R<3> denotes R<10> or optionally substituted aryl and if R<1> and R<2> = H, R<3> additionally denotes -CH-(R<11>)-OR<12>, -CO2R<12>, -CO-NR<12>R<13> or -CH(R<11>)-CH(R<14>)-B  and   R<4> denotes O-R<15>, NR<16>R<17> or R<25>,   n denotes 1, 2 or 3 and m denotes 0 or 1,  where   R<5>, R<8>, R<12>, R<13>, R<15>, R<18> and R<25> denote optionally substituted alkyl, optionally substituted alkenyl, optionally substituted alkynyl or optionally substituted cycloalkyl, R<6>, R<7>, R<11>, R<14>, R<16>, R<17>, R<20> and R<21> denote hydrogen or have the same meaning as R<5>,   R<16> and R<17> denote hydrogen or optionally substituted alkyl, R<19> denotes hydrogen, cyano, optionally substituted alkyl or optionally substituted cycloalkyl, R<9> and R<10> denote hydrogen, optionally substituted alkyl, optionally substituted alkynyl or optionally substituted cycloalkyl,   and plant protection agents containing these compounds.o
Patent TW-221968-B (TW)
IPC: A61P1/12
Filed: 1992-11-10
Granted: 1994-04-01
Abstract: This invention relates to a tramadol N-oxide material, enantiomers and compositions thereof and their use. The tramadol N-oxide material and compositions thereof are pharmacologically useful in treating pain, diarrhea and tussive conditions. The tramadol N-oxide is also subject to less side-effects as compared to pure opiate based compositions, such as abuse liability, tolerance, constipation and respiratory depression. Furthermore, the tramadol N-oxide material when administered orally exhibits analgesia for a longer duration than an equi-analgesic amount of tramadol.
Patent TW-438603-B (TW)
Title: Microemulsion preparation containing peptide pharmaceuticals
Inventor: TAKAHASHI MASAO
IPC: A61K9/107
Filed: 1994-04-19
Granted: 2001-06-07
Abstract: A microemulsion preparation wherein aqueous phase droplets, which contain a lowly absorbable, physiologically active substance and has an average particle size of 0.4 to 100 nm, are dispersed in an oily phase dispersion medium with the combined use of two or more specified surfactants. To improve the poor percutaneous/permucous absorbability of a physiologically active substance, said substance is dissolved in the aqueous phase droplets of a W/O microemulsion. Neither any higher alcohol having an offensive odor nor any conventional absorption promoter is used in this microemulsion, and it is possible to provide a microemulsion preparation with a low local pungency.
Patent TW-257877-B (TW)
Title: Method and apparatus for growing high resistivity CdTe crystals
Inventor: SHIN HWA-YUH
IPC: H01L21/06
Filed: 1994-05-28
Granted: 1995-09-21
Abstract: The invention relates to a new method (two step process of temperature gradient solution growth mehtod and travelling heater method) of growing high resistivity CdTe crystals doped with chlorine by using a simple THM crystal growth apparatus. The source material is first synthesized from Te-solution by temperature gradient solution growth method. In this method, the crystal growth temperature is below 900 deg.C, which is much lower than the melting point of CdTe(.=. 1092 deg.C). Subsequently, the material is treated by the THM where a liquid zone of tellurium is used as a solvent. The crystals grown are compensated by adding Chlorine(100~1000ppm) in the solvent zone. The growth rate and temperature are 3~6 mm/day and 700~800 deg.C, respectively. Furthermore, a rather simple apparatus based upon a lava heating element is proposed. It permits to produce a large temperature gradient (>85 deg.C/cm) and a narrow heating zone (~1cm) during the growth of CdTe crystals.
Patent TW-286273-B (TW)
IPC: A61F6/14
Filed: 1994-06-15
Granted: 1996-09-21
Abstract: PCT No. PCT/FI94/00255 Sec. 371 Date Apr. 11, 1996 Sec. 102(e) Date Apr. 11, 1996 PCT Filed Jun. 15, 1994 PCT Pub. No. WO95/00199 PCT Pub. Date Jan. 5, 1995Intravaginal delivery system including a flexible support means, and a delivery means carried by the support means and containing an active agent wherein the support means comprises a core member substantially in the form of an open ring, and the delivery means comprises at least one polymer body which encircles the core member in a beltwise manner along a portion of a length of the core member.
Patent TW-238427-B (TW)
Title: Isolating method for conductive layer
Inventor: HORNG YEUN-DING
IPC: H01L27/112
Filed: 1994-09-16
Granted: 1995-01-11
Abstract: An isolating method for conductive layer, which is suitable for isolatingthe conductive layer to form several conductive path, includes: 1. forming the first shielding on the destined position of conductive layer; 2. forming one second shielding on the first shielding and conductive layer, and making the second shielding form concave notch on the conductive layer; 3. forming the third shielding; 4. removing the second shielding located between the first shielding and the third shielding, and forming isolating slot between the first shielding and the third shielding; 5. forming the conducting paths on the conductive layer through the isolating slots.
Patent TW-265435-B (TW)
Title: Copying machine
Inventor: AKATA YUKIKU
IPC: H04N1/32
Filed: 1995-04-07
Granted: 1995-12-11
Abstract: An original reading device reads an image on an original in response to a read command, to produce image data, which is stored into an image memory. An output device performs an output process in which copying onto a sheet is effected based on the image data stored in the image memory and the copied sheet is discharged. A control device supplies the read command to the original reading device, and outputs an output command to the output device at such a timing that the output process of the output device is completed at a time point when the reading of the original by the original reading device is also completed.
Patent TW-386329-B (TW)
Title: A method for determining whether to intra code a video block
Inventor: O'CONNELL KEVIN JOSEPH
IPC: H04N7/50
Filed: 1995-04-21
Granted: 2000-04-01
Abstract: Whether to encode a present video block of an incoming video frame, I.e. intra code, or whether to encode the difference between the present video block of the incoming frame and a best match video block from a previously stored video frame, I.e. nonintra code, is determined in a video compression system 100. First the present video block is divided into a predetermined number of sub blocks 301. Then an average pixel value is calculated fro each sub block 302 and used along with the individual pixel values of the sub block to determine sub block deviation 303. The sub block deviations are used to compute a present video block deviation 303. The present video block deviation is then compared with an error deviation 306 that is calculated based upon the present video block pixel values and the best match video block pixel values 305. If the comparison is favorable, then the difference between the present video block and the best match video block are encoded. If the comparison is unfavorable, then the  present video block is encoded.
Patent TW-255842-B (TW)
Title: Method and device for preventing drilling chips from winding around drill bit and for removing drilling chips deposited in flutes of drill bit
Inventor: WU CHING-LONG
IPC: B23B47/34
Filed: 1995-04-27
Granted: 1995-09-01
Abstract: A method for preventing drilling chips from winding around drill bit and for removing drilling chips deposited in flutes of drill bit, which comprises installing a passive gear on the bit side in which the passive gear is parallel to the bit and at least one gear on the perimeter of the passive gear meshes with the drill slot and the bit can move axially corresponding to the passive gear so that when the bit rotates the teeth of passive gear are driven to mesh with the bit slot one-by-one so as to prevent drilling chips from winding around drill bit and for removing drilling chips deposited in flutes of drill bit through the insertion of each tooth of the passive gear into the bit slot.
Patent TW-406202-B (TW)
Title: Liquid crystal display device and method for manufacture thereof
Inventor: MASAMI SHINOHARA
IPC: H04N9/31
Filed: 1995-07-15
Granted: 2000-09-21
Abstract: The present invention relates to a projection type liquid crystal display device and a method for the manufacture thereof. It is the object of the present invention to provide a liquid crystal display device having pillar-shape spacers formed in pixel array regions with improved display properties by preventing the degradation of contrast and the occurrence of residual images, and a method for the manufacture of such a liquid crystal display device. In the liquid crystal display device comprising three liquid crystal light valves for displaying images corresponding to red (R), green (G) and blue (B), and having a plurality of pillar-shape spacers for maintaining a prescribed cell gap formed in their pixel array regions, a plurality of pillar-shape spacers formed in their pixel array regions are provided at locations which do not overlap with each other when images are projected on the screen.
Patent TW-293157-B (TW)
Title: vacuum pen sucker with a stop stub
Inventor: LIN DING-I
IPC: H01L21/68
Filed: 1995-12-27
Granted: 1996-12-11
Abstract: A vacuum pen sucker comprises: a pen body; a flat tip coupled to the body having a first side plan with a slot device mounted thereon for sucking wafer; a stop stub located between the slot device and the pen body being extended upward from the first side plan; and a passing line being connected to the slot device on the flat tip through the pen body and the tip.
Patent TW-288199-B (TW)
Title: Process of fabricating lightly doped drain with inverse-T-shaped gate
Inventor: WU SHYE-LIN
IPC: H01L27/105
Filed: 1996-04-09
Granted: 1996-10-11
Abstract: A process of fabricating lightly doped drain with inverse-T-shaped gate comprises of the steps of: (1) forming one gate oxide on substrate; (2) forming at least two layers of stacked amorphous silicon on the gate oxide; (3) forming first insulator on top of the stacked amorphous silicon, in which the first insulator is formed by masking one photoresist; (4) forming lightly doped source/drain electrode with the photoresist as implantation mask; (5) removing partial stacked amorphous silicon where is not masked by the photoresist to make the bottom expose; (6) forming second insulator spacer on the stacked amorphous silicon sidewall; (7) forming heavily doped source/drain with first insulator and second insulator spacer as implantation mask; (8) removing the stacked amorphous silicon bottom and the gate oxide where is not masked by the spacer; (9) removing the first insulator and second insulator spacer; (10) forming third insulator spacer on the gate oxide and the stacked amorphous silicon sidewall; (11) forming metal silicide on the stacked amorphous silicon top and above partial heavily doped source/drain electrode.
Patent TW-438729-B (TW)
Title: Directly cooled, side fired forehearth
Inventor: HULL JAMES D
IPC: C03B7/06
Filed: 1996-05-16
Granted: 2001-06-07
Abstract: A forehearth (20) for cooling glass from a melting furnace as it flows to a feeder bowl (28) from which it is discharged to a forming machine. The forehearth is in the form of an elongate, horizontally extending insulated trough (26) with a roof formed by a longitudinally extending series of roof block elements (30), each of which is of one-piece construction and extends completely across the width of the insulated trough. The downwardly facing surface of each roof block element is contoured to incorporate concave portions (30a, 30b) near the edges of the forehearth, a concave portion (30c) above the center of the forehearth and convex portions (30d, 30e) separating the center concave portion from the side concave portions to substantially impede heat transfer between the side concave portions and the center concave portion. Burners (32) are positioned along the opposed sides of the forehearth to fire transversely into the spaces underlying the side concave portions of the roof blocks, and cooling air passages (40) extend through the roof blocks to discharge cooling air transversely of the forehearth into the space underlying the center concave portion in direct contact with the glass in the forehearth. A plurality of exhaust openings (34, 42) for products of combustion from the burners and cooling air, respectively are positioned along the length of the forehearth to provide for longitudinal flow of products of combustion and cooling air at rates which are variable along the length of the forehearth.
Patent TW-301052-B (TW)
Title: Method of synchronously removing particle on semiconductor wafer
Inventor: HWANG YEUAN-GWO
IPC: H01L23/60
Filed: 1996-07-02
Granted: 1997-03-21
Abstract: A particle removal method of semiconductor wafer surface of integrated circuit comprises of: (1) supplying gas flow in loadlock system; (2) for one period of time generating negative charge on the above semiconductor wafer, which will push negative particle on the above semiconductor wafer surface away; (3) for one period of time generating positive charge on the above semiconductor wafer, which will push positive particle on the above semiconductor wafer surface away; (4) alternatively generating negative and positive charge on the above semiconductor wafer, and neutral particle without charge on the above semiconductor wafer surface will be pushed away; (5) stopping gas flow and charge supply; (6) exhausting the above loadlock system to vacuum state; (7) exhaling the above loadlock system to atmospheric state; (8) transferring the above semiconductor wafer to the above loadlock system.
Patent TW-319898-B (TW)
Title: Forming method of nitride sidewall with spacer feet in LOCOS process
Inventor: JEAN RONG-WU
IPC: H01L21/76
Filed: 1996-09-13
Granted: 1997-11-11
Abstract: A method of forming field oxide region on active area of semiconductor substrate comprises of the following steps: (1) on substrate surface forming first oxide, in which the above substrate has separated active area and field oxide region; (2) on the above first oxide depositing first nitride layer; (3) patterning the above first nitride layer in order to form one mask block on the above active area, in which the above mask block has sidewall; (4) on the above mask block and first oxide depositing second nitride layer; (5) with anisotropical etch process etching the above second nitride layer and first oxide in order to form nitride spacer on the above mask block sidewall, and on the above first oxide surface forming nitride spacer feet; (6) with the above mask block, nitride spacer, and nitride spacer feet as oxidization mask oxidizing substrate, therefore forming field oxide region.
Patent TW-386265-B (TW)
Title: Selective etching method
Inventor: YU JEN-HUA
IPC: H01L21/311
Filed: 1996-09-18
Granted: 2000-04-01
Abstract: A method for forming a narrow line-width high, aspect ratio via within an integrated circuit through a first integrated circuit layer that resides upon a second integrated circuit layer. Forming a second integrated circuit layer upon a first integrated circuit on semiconductor substrate first. Through a first etch method, a partial via is formed within the first integrated circuit layer to a distance of about 2,500 to 4,000 angstroms above the surface of the second integrated circuit layer. The partial via with substantially parallel sidewalls is etched by the first etch method. Through a second etch method, the partial via is then etched completely through the first integrated circuit layer.  The second etch method is chosen to achieve an about 60:1 etch selectivity ratio for the first integrated circuit layer with respect to the second integrated circuit layer of at least.  The method is preferably employed in forming narrow line-width, high aspect ratio vias through insulator layers beneath which metal silicide layers are formed upon integrated circuit device electrodes within integrated circuits.
Patent TW-306039-B (TW)
Title: Manufacturing method of high-capacitance dynamic random access memory component
Inventor: LU JYH-YEUAN
IPC: H01L21/70
Filed: 1996-12-05
Granted: 1997-05-21
Abstract: A manufacturing method of high-capacitance dynamic random access memory(DRAM) component, in which DRAM has many memory cells which contains metal oxide semiconductor field effect transistor(MOSFET) and capacitor, the above MOSFET contains gate insulating layer, gate and source/drain, the above capacitor contains bottom electrode, capacitor dielectric and plate electrode, and bottom electrode of the above capacitor electrically contacts with drain electrode of MOSFET, comprises of: (1) on the above MOSFET forming first insulator; (2) on the above first insulator forming contact hole to expose drain of the above MOSFET; (3) on the above first insulator surface and drain surface of exposed MOSFET forming one first polysilicon; (4) forming first polysilicon pattern to form capacitor bottom electrode; (5) on the above bottom electrode forming second insulator; (6) on the above second insulator surface forming mounds of spot polysilicon, in which the thickness of the above mounds of spot polysilicon is between 100 to 300 angstrom, diameter between 50 to 500 angstrom, and the distance between the above mounds of spot polysilicon is between 100 to 1000 angstrom; (7) etching second insulator between the above mounds of spot polysilicon, so as to form masking structure made of the above mounds of spot polysilicon on the above second insulator mound; (8) partially etching the above bottom electrode, forming crevices on bottom electrode surface which is not overlaid by masking structure, in which the above crevices depth is between 500 to 5000 angstrom, and partially etching also completely removes mounds of spot polysilicon of the above masking structure; (9) removing second insulation mound of the above bottom electrode surface, to expose polysilicon pillar which is overlaid by the above masking structure; (10) on the above bottom electrode surface forming dielectric; (11) on the above dielectric surface forming second polysilicon; (12) by lithography and etch technology etching the above second polysilicon, to form plate electrode of capacitor.
Patent TW-332259-B (TW)
Title: System for detecting troubles in a CMOS integrated circuit
Inventor: SAKAGUCHI KAZUHIRO
IPC: G01R31/319
Filed: 1997-02-04
Granted: 1998-05-21
Abstract: A system for detecting troubles in a CMOS integrated circuit, which comprises, in a CMOS integrated circuit, monitoring any quiescent current, excluding the switching current of transistor, in a supply current caused by the operation when the circuit receives a testing pattern; the system being characterized in comprising: means for repetitively applying a test pattern on the CMOS integrated circuit during the test; current detection means for detecting the supply current supplied to the CMOS integrated circuit; and means for generating the power spectrum of the supply current detected by the current detection means; in which the CMOS integrated circuit detects troubles based on the magnitude of power in the power spectrum of the supply current of a predetermined band during the test.
Patent TW-367275-B (TW)
Title: A method of filling cores with molding sand
Inventor: UZAKI NAGATO
IPC: B22C15/264
Filed: 1997-04-10
Granted: 1999-08-21
Abstract: A method of filling a core cavity is provided wherein the entire core cavity is uniformly filled with highly compacted sand for molding the core without the need of providing many ventholes. The method is characterized in that sand for molding the core is drawn into the core cavity 2 to preparatorily fill it, and after that the thus prepared sand is repeatedly and sequentially compacted by impulsively pressurizing the sand, starting from the sand at its innermost positions.
Patent TW-342559-B (TW)
Title: Fast timing acquisition device for relay type frequency-locked circuit and phase-circuit
Inventor: UANG CHORNG-GUANG
IPC: H03L7/00
Filed: 1997-04-24
Granted: 1998-10-11
Abstract: A fast timing acquisition device for relay type frequency-locked circuits and phase-locked circuits, which comprises a conversion detector, a voltage control oscillator, a circuit filter for phase-locked circuits, a first low-pass filter, a 90° phase converter, a second low-pass filter, and a plurality of multipliers; which is characterized in further comprising a frequency delimiter comprising: a high-pass filter coupled to the first circuit; a second circuit coupled to the high-pass filter; a third low-pass filter coupled to the second circuit; a Schmitt inverter coupled to the third low-pass filter; and a switch device coupled to the Schmitt inverter; thereby the frequency delimiter enables the timing acquisition device achieving a stable and fast timing acquisition.
Patent TW-367394-B (TW)
Title: Variable capacity compressor
Inventor: KAWAGUCHI MASAHIRO
IPC: F04B49/06
Filed: 1997-05-05
Granted: 1999-08-21
Abstract: The present invention is provide a variable capacity compressor which can securely and accurately control the opening of the capacity control valve with little power. A capacity control valve for adjusting the opening is disposed in-between the air supply path between the crank chamber and the discharge chamber. A pressure-sensitive chamber communicating with the inlet path is disposed in the capacity control valve, wherein a bellows for transferring the fluctuation of the inlet pressure to the valve body which opens and closes said air supply path is accommodated inside said pressure-sensitive chamber. A current of predetermined duty ratio corresponding to target current value in relative to the environment of the vehicle. By feeding back the input current value into the solenoid, said input current valve will gradually match with the target current value.
Patent TW-370581-B (TW)
Title: Spinning ring structure
Inventor: IWAMA YASUSHI
IPC: D01H7/60
Filed: 1997-05-15
Granted: 1999-09-21
Abstract: A spinning ring structure (10, 110) for use on a spinning frame comprises a stationary ring (20) fixedly held in place, a rotary ring (30, 130) fitted in the stationary ring (20) coaxially with the stationary ring (20) so as to rotate about its center axis and provided with an annular flange (32) at its upper end, a traveler (50) put on the flange (32) of the rotary ring (30) for traveling along the flange (32) to guide a yarn (T2) to a bobbin (82) disposed coaxially with the rotary ring (30). Opening (36) are formed through a neck portion (34) of the rotary ring (30), whereby flies produced during the spinning operation by friction between the yarn and the traveler are discharged outside the spinning ring structure through the openings due to centrifugal force.
Patent TW-371762-B (TW)
Title: A semiconductor memory device for reducing a static current
Inventor: CHO YONG-CHUL
IPC: G11C11/419
Filed: 1997-05-28
Granted: 1999-10-11
Abstract: The invention relates to a semiconductor memory device, particularly a device when in write mode, it disables bit line pull-up and reducing of static current, comprising a bit line, aligned a plurality of memory cells and external data bus, pull-up mechanism, pull-up means of supplying power for bit-line in order to protect data sensing error, while in write mode, it makes the bit-line pull-up disable and cut off the static current caused by the side bit-line pull-up mechanism.