baber/WOPTO huggingface dataset:
Patent TW-I260049-B (TW)
Title: Fabrication method of semiconductor device and semiconductor device
Inventor: KONDO YASUICHI
IPC: H01L21/20
Filed: 2003-05-22
Granted: 2006-08-11
Abstract: The object of the present invention is to provide a fabrication method of semiconductor device and a semiconductor device with reduced forming time of SiGe film and having uniform film thickness and film quality; wherein, in the processing chamber 2 with introducing filming gas into the batched CVD filming device through a plurality of pores configured at the gas inlet 7 to generate gas turbulence in the process chamber 2; and, in the pressure state of keeping constant pressure and semi-constant pressure area in the processing chamber 2, making the SiGe film growing epitaxially on the semiconductor wafer 12 configured in the processing chamber 2; then, making the deformed silicon film epitaxially grown on the SiGe film; and, forming the semiconductor device on the semiconductor wafer 12 with SiGe film and deformed silicon film.
Patent TW-I223719-B (TW)
Title: Sub-micrometer-resolution optical coherent tomography
Inventor: SUN CHI-KUANG
IPC: A61B5/107
Filed: 2003-05-30
Granted: 2004-11-11
Abstract: A sub-micrometer-resolution optical coherent tomography. The sub-micrometer-resolution optical coherent tomography comprises a light source emitting short-wavelength light passing through suitable phosphor to create a first beam with broad bandwidth light, an interferometer splitting the first beam into a second beam and a third beam, a reflection mirror reflecting the second beam to be a reference beam. The third beam and is reflected by the sample to interfere with the reference beam. The light source can be an LED emitting white light, and the LED comprises an LED emitting blue light or UV and a suitable phosphor.
Patent TW-I224830-B (TW)
Title: Method for manufacturing semiconductor device
Inventor: MASUDA SHUICHI
IPC: H01L21/76
Filed: 2003-06-10
Granted: 2004-12-01
Abstract: A provided method for manufacturing the semiconductor device includes the steps of: forming a trench in a silicon substrate on which a silicon oxide film and a silicon nitride film are sequentially stacked; oxidizing the silicon substrate by an oxidation method of not forming nearly at all a silicon oxide film on a surface of the silicon nitride film, to form a silicon oxide film on the surface of the trench and perform pullback etching on the silicon nitride film; and performing rounding oxidation by using radical oxidation to round an edge of the surface of the trench. Therefore, it is possible to perform pullback etching on the nitride film, even in case of performing rounding oxidation by using radical oxidation.
Patent TW-I277952-B (TW)
Title: Chip on disc power supply
Inventor: KAHLMAN JOSEPHUS ARNOLDUS HENR
IPC: G11B7/004
Filed: 2003-06-11
Granted: 2007-04-01
Abstract: A system for rendering information from a record carrier is described. The record carrier (1) has an integrated circuit (4) build in. The chip communicates contactlessly with the Device. Power for the chip (4) is generated from low frequency magnetic flux changes by a power supply coil integrated on the chip. The device has a read head (22) and a magnetic array (21) having a plurality of poles for generating a static magnetic field having areas with positive and negative magnetic flux for cooperating with the power supply coil, and drive means (26) for rotating the record carrier for scanning the track via the head (22) and for moving the integrated circuit (4) through the magnetic field for creating the low frequency magnetic flux changes.
Patent TW-591676-B (TW)
Title: Base board structure with hidden capacitor
Inventor: CHUNG PEI-HAN
IPC: H01G4/40
Filed: 2003-06-20
Granted: 2004-06-11
Abstract: A base board structure with hidden capacitor is disclosed. The base board structure is formed of a single layer or several layers of base boards with hidden capacitors. Each base board with hidden capacitor comprises several capacitor units. The traces in each capacitor unit can be connected arbitrarily in parallel or in series through the circuit connection layer above/below the base board structure, so as to be combined into various capacitors having different capacitances and bandwidths for satisfying the requirements of different circuits. Also, each capacitor unit can have the signal transmission lines for transmitting the electrical signals of the electronic devices above/below the base board structure based on different circuit designs. Therefore, the purpose of electrical signal connection can be accomplished by simple circuit layout.
Patent TW-I244849-B (TW)
Title: An internal business data decryption method
Inventor: TZUN AIVEN
IPC: H04L9/00
Filed: 2003-07-30
Granted: 2005-12-01
Abstract: This invention relates to an internal business data decryption method, which enables encrypted data files to be decrypted through authentication with e-business server and transfers decrypted string back to a user end. The invention is used for preventing confidential data from being revealed, allowing authorized users to use the encrypted data files. Therefore, this invention can achieve the objective of data security ensuring internal data files to be used within an enterprise only.
Patent TW-I228694-B (TW)
Title: Semiconductor integrated circuit device having ROM decoder for converting digital signal to analog signal
Inventor: ENJO HIROYASU
IPC: H01L27/088
Filed: 2003-09-24
Granted: 2005-03-01
Abstract: With respect to gate wires 34P arranged in a P-ROM decoder 216P, two confronting gate wires 34P to which one bit of a digital signal representing a gradation level is input with being non-inverted or inverted are paired, and the width of the gate wire that contains the upper portion of the depletion type transistor 2P (kept under ON-state at all times) and from the depletion type transistor 2P until the enhancement type transistors 1P adjacent to the depletion type transistor 2P is set to a half of the gate wire width L on the transistor 1P inside the gate wires 34P.
Patent TW-I250387-B (TW)
Title: Lithographic apparatus and device manufacturing method
Inventor: JACOBS HERNES
IPC: G03F7/20
Filed: 2003-09-26
Granted: 2006-03-01
Abstract: A lithographic projection apparatus in which a balance mass is supported by a base frame using a plurality of flexible supporting elements which are mechanically attached to both the base frame and balance mass. Free horizontal movement is provided by providing the supporting elements with at least two pivot points.
Patent TW-I257606-B (TW)
Title: Recordable optical recording medium containing preinstalled information, method of reading the same, and circuit thereof
Inventor: YU CHIH-CHING
IPC: G11B7/24
Filed: 2003-12-26
Granted: 2006-07-01
Abstract: The present invention discloses a recordable optical recording medium containing preinstalled information, the method of reading the preinstalled information, and the circuit thereof. The recordable optical recording medium containing preinstalled information is a substrate with a spiral pregroove. The pregroove has regular wiggles in the view of microcosmic. The recordable optical recording medium is characterized in containing a first waveform, a second waveform, and a third waveform with the same fundamental wave cycle. The duty cycle of the first waveform is 1. The duty cycles of the second and third waveforms are distinct. The combinations of these duty cycles are used to record the preinstalled information. Moreover, the invention discloses a method and circuit of reading the preinstalled information. After obtaining the wobble signals, the method further takes the steps of phase corrections, integrations, and resetting, so as to more accurately obtain the preinstalled information.
Patent TW-I227949-B (TW)
Title: Laser annealing apparatus for producing poly silicon membrane layer and its method of using laser crystallized to form poly silicon membrane thereof
Inventor: CHANG SHIH-CHANG
IPC: H01L21/00
Filed: 2004-01-02
Granted: 2005-02-11
Abstract: The present invention is a laser annealing apparatus for producing poly silicon membrane layer to avoid laser damage to the border of amorphous layer of substrate while proceeding laser annealing. The laser annealing apparatus includes a shielding structure that can resist the laser on the border of substrate to avoid totally laser illuminating on the amorphous membrane layer on border of substrate while proceeding laser annealing on amorphous membrane layer to form poly silicon membrane. This invention also supplies a method to form poly silicon membrane layer using such laser annealing apparatus for proceeding laser crystallization.
Patent TW-I238498-B (TW)
Title: Semiconductor device having a guard ring
Inventor: WAKAYAMA SHIGETOSHI
IPC: H01L23/52
Filed: 2004-02-16
Granted: 2005-08-21
Abstract: A multilayer interconnection structure of a semiconductor device includes a first guard ring extending continuously along a periphery of a substrate and a second guard ring extending continuously in the multilayer interconnection structure along the periphery so as to be encircled by the first guard ring and so as to encircle an interconnection pattern inside the multilayer interconnection structure, wherein the first and second guard rings are connected with each other mechanically and continuously by a bridging conductor pattern extending continuously in a band form along a region including the first and second guard rings when viewed in the direction perpendicular to the substrate.
Patent TW-I268499-B (TW)
Title: Information storage medium containing multi-path presentation data, reproducing apparatus of reproducing multi-path presentation data, and method of providing multi-path presentation data
Inventor: KANG MAN-SEOK
IPC: G11B7/007
Filed: 2004-03-08
Granted: 2006-12-11
Abstract: A data recording and reproducing apparatus supporting multi-path recording reproduction, and an information storage medium on which multi-path data is recorded. The information storage medium includes at least one clip that is recording unit containing presentation data for respective paths, wherein presentation data in a selected path is continuously reproduced with changing paths, and additional information regarding a block of the path is recorded separately from the presentation data. Accordingly, it is possible to more effectively use a recording space and reduce the frequency of jumping to clips, thereby effectively reading the multi-path presentation data from the information storage medium.
Patent TW-I236680-B (TW)
Title: Illegal data use prevention system
Inventor: SHIBATA YOSHIKI
IPC: G06F21/34
Filed: 2004-05-21
Granted: 2005-07-21
Abstract: An illegal data use prevention system includes a registrar which issues first authentication information for a game machine reproducing data and second authentication information for a user-identifying IC card. The data is identified by the first authentication information and the second authentication information. The game machine contains the first authentication information and, for example, executes a game program in accordance with a result of determination as to whether the IC card contains the second authentication information. Thus, illegal use of data is effectively prevented.
Patent TW-I248162-B (TW)
Title: Trench semiconductor device and method of forming the same
Inventor: CHEN MENG-HUNG
IPC: H01L21/76
Filed: 2004-05-27
Granted: 2006-01-21
Abstract: A trench semiconductor device and a method of forming the same are provided. The method includes providing a substrate with a mask structure thereon. A trench is formed in the mask structure and the substrate and exposes sidewall of the mask structure. A capacitor is formed in the trench of the substrate. The capacitor has an upper surface substantially exposing the sidewall of the mask structure. A collar dielectric layer is formed on the sidewall of the mask structure and exposes a portion of the upper surface of the capacitor. A conductive plug is formed in the trench electrically coupling with the capacitor. The mask structure is removed to expose the substrate with the collar dielectric layer and the conductive plug thereon. An epitaxial layer is grown on the substrate.
Patent TW-I255770-B (TW)
Title: High frequency-weldable shaped structure
Inventor: WU RU-YU
IPC: B32B27/00
Filed: 2004-06-18
Granted: 2006-06-01
Abstract: Disclosed herein is a high frequency-weldable shaped structure, which is a thermoplastic sheet, a fiber, a yarn, or a cord, having a surface with at least a weldable area of a welding composition of modified PET. The composition is a polymerization product of terephthalic acid, ethylene glycol, and a diol for modifying, and the diol is selected from the group consisting of neopentanediol, 1,3-dihydroxy-2-methylpropane, 1,3-dihydroxy-2-methyl-propane alkoxylate, 2,5-dimethyl-2,5-hexanediol, polyethylene glycol, and a combination thereof.
Patent TW-I258844-B (TW)
Title: Method for manufacturing flash device
Inventor: SHIN HYEON-SANG
IPC: H01L27/115
Filed: 2004-06-30
Granted: 2006-07-21
Abstract: The present invention relates to a method for manufacturing a flash device. After a gate electrode for a flash device is formed, an EFH of an isolation film is reduced through a predetermined etch process. It is therefore possible to reduce the step of a barrier film for protecting an isolation film. Moreover, by reducing the step of the barrier film, it is possible to prevent a condition that a contact is not opened due to the step of the barrier film upon formation of a source line contact and a drain contact. Furthermore, it is possible to sufficiently reduce an EFH of an isolation film through a sufficient etch using a mask through which only a cell region is opened.
Patent TW-I281441-B (TW)
Title: System for delivering material onto a substrate
Inventor: YANG CHUNG-C
IPC: B05D1/04
Filed: 2004-07-16
Granted: 2007-05-21
Abstract: A system (100, 150, 160, 202) for delivering material (104) onto a substrate (106). The system (100, 150, 160, 202) includes a jetting system having a reservoir (102) containing the material (104) and the reservoir (102) includes a nozzle (108) through which the material (104) is expelled from the reservoir (102). An arcuate section (110, 110') is positioned between the reservoir (102) and the nozzle (108). The material (104) is configured to travel from the reservoir (102), through the arcuate section (110, 110'), and through the nozzle (108). The system (100, 150, 160, 202) also includes a means for applying pressure (112, 208) on the material (104) contained in the reservoir (102), wherein the material (104) is expelled from the reservoir (102) through application of pressure by the means for applying pressure (112, 208) to thereby create a column of the material (118) from the nozzle (108). A means for producing pressure modulations (122, 214) is located proximate the nozzle (108) and is configured to substantially regulate formation of droplets (120) from the column of the material (118). In addition, the system (100, 150, 160, 202) includes a charging ring (126, 216) configured to induce an electrical charge to selective ones of the droplets (120) as they pass through the charging ring (126, 216). One or more deflection plates (128, 218) are also included for altering a trajectory of the charged droplets (120).
Patent TW-I250485-B (TW)
Title: Light emission device and manufacturing method thereof
Inventor: MIZUYOSHI AKIRA
IPC: H01L33/56
Filed: 2004-09-14
Granted: 2006-03-01
Abstract: A light emission device is constituted of LED chips, a driver circuit, and a wiring pattern for connecting the individual LED chips to the driver circuit. The wiring pattern is formed by weaving line members into a cross grid, the line member being formed by coating an electro conductive core with an isolating material. The lateral line members are connected to a negative electrode of the driver circuit, while the longitudinal line members are connected to a positive electrode of the driver circuit. Connectors are formed at cross points between the line members negative poles of the LED chips are connected to the connectors that are formed on the lateral line members, while positive poles of the LED chips are connected to the connectors that are formed on the longitudinal line members. The wiring pattern is affixed to a heat sink through an adhesive agent.
Patent TW-I249280-B (TW)
Title: Two-wavelength semiconductor laser device and method of manufacturing the same
Inventor: KOH CHONG-MAN
IPC: G11B7/1275
Filed: 2004-09-29
Granted: 2006-02-11
Abstract: Disclosed herein is a two-wavelength semiconductor laser device. The two-wavelength semiconductor laser device comprises a first conductive material substrate having an first and second regions separated from each other thereon, a first semiconductor laser diode formed on the first region, a non-active layer formed on the second region of the first conductive material substrate and comprising the same layers as those of the first semiconductor laser diode, a second semiconductor laser diode formed on the non-active layer, and a lateral conductive region formed at least between the first and second semiconductor laser diodes.
Patent TW-I279650-B (TW)
Title: Method and system for immersion lithography process
Inventor: CHANG CHING-YU
IPC: G03B27/42
Filed: 2004-10-15
Granted: 2007-04-21
Abstract: A method and system for an immersion lithography system is disclosed. After position a wafer in the immersion lithography system, a light exposing operation is performed on the wafer using an objective lens immersed in a first fluid containing surfactant, wherein the surfactant reduce a likelihood for having floating defects adhere to the wafer and the objective lens.
Patent TW-I249829-B (TW)
Title: Lead-frame-based semiconductor package and fabrication method thereof
Inventor: CHEN NAN-JANG
IPC: H01L23/495
Filed: 2004-10-26
Granted: 2006-02-21
Abstract: A lead-frame-based semiconductor package and a fabrication method thereof are provided. A heat sink is mounted between the lead frame and a chip incorporated in the semiconductor package, and is electrically connected to the chip so as to form a signal reference of the chip for impedance control. This effectively suppresses the inductance and capacitance effects generated by high-frequency signals and prevents cross-talk, such that the heat dissipating efficiency can be further improved.
Patent TW-I276065-B (TW)
Title: CD reading method
Inventor: WEI TAO-YEN
IPC: G11B20/10
Filed: 2004-11-01
Granted: 2007-03-11
Abstract: A CD reading method that reads an address of a CD in a speed rating is provided. The method includes steps of: (a) reading an address in accordance with an amplification signal corresponding to the speed rating in which the amplification signal is a preset amplification signal; (b) checking whether the read is successful, terminating the present method if yes, and entering step (c) if no; (c) adjusting the amplification signal corresponding to the speed rating in accordance with a read error index value; (d) re-reading an address after adjusting the amplification signal in accordance with step (c); and (e) checking whether the read is successful, and repeating the step (c) if no.
Patent TW-I259862-B (TW)
Title: Foldable screen allowing quick adjustment of guide cable tension
Inventor: FAN CHIOU-LAN
IPC: E06B9/52
Filed: 2005-01-14
Granted: 2006-08-11
Abstract: A foldable screen allowing quick adjustment of guide cable tension, including: an outer frame; a movable frame slidable in the outer frame; a screen mesh having opposing sides that are fastened to the outer frame and the movable frame, respectively; a guide cable system for supporting the screen mesh. The guide cable system includes at least one guide cable assembly. The guide cable assembly has a guide cable passing through the screen mesh and an adjustment base slidably provided in the movable frame, and the midsection of the guide cable winds about and to be tensioned by the adjustment base. As such, by adjusting the position of the adjustment base, this invention allows quick adjustment of the guide cable tension.
Patent TW-I280516-B (TW)
Title: Method of measurement for image quality
Inventor: HOU KUNG-JUI
IPC: G06T7/00
Filed: 2005-02-02
Granted: 2007-05-01
Abstract: A method of measurement for image quality is provided. The method comprises using numerical analysis to calculate a peak signal noise ratio from mathematical operation of a group of binary image data and a set of comparing image data to estimate the noise in the photo image, then to calculate an entropy value from mathematical operation of a group of gray-level image data to estimate the hues deviation in the photo image. As mentioned above, an engineer can efficiently finish the estimation of image quality.
Patent TW-I256198-B (TW)
Title: Method and apparatus of converting data words into code words
Inventor: MA CHANG-PO
IPC: H03M13/00
Filed: 2005-02-03
Granted: 2006-06-01
Abstract: Disclosed are a method and apparatus of converting data words into code words. This method inserts 2p sets of p different guided bits before inputting each set of data words, performs a pre-defined operation, and generates 2p sets of data candidates. It chooses q sets of data candidates from the 2p sets of data candidates for coding, performs a run length limited (RLL) coding with an encoding rate m/n, and generates q sets of (d, k) constrained code words. Finally, an optimal set of (d, k) constrained code words is selected from the q sets of (d, k) constrained code words. The apparatus reduces the circuitry of the RLL coding without losing the control of direct current and low frequency components, after being applied guided scrambling in the RLL coding.
Patent TW-I260070-B (TW)
Title: A trench and a trench capacitor and method for forming the same
Inventor: TEMMLER DIETMAR
IPC: H01L21/8242
Filed: 2005-04-12
Granted: 2006-08-11
Abstract: A method for fabricating a trench includes providing a semiconductor substrate made of a semiconductor material. A trench is etched into a surface of the semiconductor substrate such that a trench wall is produced. At least one layer is provided on the trench wall. This step is performed in such a way that the topmost layer provided on the trench wall is constructed from a sealing material. A selective epitaxy method is carried out in such a way that a monocrystalline semiconductor layer is formed on the surface of the semiconductor substrate and preferably no semiconductor material grows directly on the sealing material. A partial trench is etched in a surface of the epitaxially grown semiconductor layer. This step is performed in such a way that at least part of the layer made of the sealing material is uncovered. An uncovered part of the layer made of the sealing material is then removed.
Patent TW-I253216-B (TW)
Title: Combination of the plug and socket electric connector
Inventor: HO YI-TSE
IPC: H01R24/58
Filed: 2005-04-21
Granted: 2006-04-11
Abstract: This invention relates to a combination of the plug and socket electric connector. It comprises a plug electric connector, and a corresponding socket electric connector. The plug electric connector comprises an insulating shell, a first hollow sleeve installed in the insulating shell, a second hollow sleeve installed in the insulating shells, and a conductive terminal installed inside the insulating shell. The socket electric connector comprises an insulation body; a first conductive terminal electrically connected to the first hollow sleeve and inserted into the insulation body; a second conductive terminal electrically connected to the first conductive terminal and inserted into the insulation body; a third conductive terminal electrically connected to the second hollow sleeve; a wiring board; and a fixing device. The plug electric connector is individually inserted into the compatible socket electric connector correspondingly, so as to prevent the plug electric connector from inserting into the socket electric connector of different specifications.