Patent SG-11201808603V-A (SG)
Title: Controlling dry etch process characteristics using waferless dry clean optical emission spectroscopy
Inventor: COPPA BRIAN J
IPC: H01L21/66
Filed: 2017-03-24
Abstract: INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property —, Organization 1111111101111011101010111110101111101110101111101111011001101111101111011111 International Bureau 0.. .1 j (10) International Publication Number (43) International Publication Date .... ..or::,' WO 2017/172536 Al 5 October 2017 (05.10.2017) IN I PO I P CT (51) International Patent Classification: (71) Applicant (for JP only): TOKYO ELECTRON U.S. H01L 21/3065 (2006.01) HO1L 21/67 (2006.01) HOLDINGS, INC. [US/US]; 2400 Grove Boulevard, Aus- H01L 21/66 (2006.01) H05H 1/46 (2006.01) tin, Texas 78741 (US). H01L 21/02 (2006.01) (72) Inventors: COPPA, Brian J.; 709 Spyglass Way, Eagle, (21) International Application Number: Idaho 83616 (US). VEDHACHALAM, Deepak; 6488 S PCT/US2017/024138 Liveoak Pl., Boise, Idaho 83716 (US). DASSAPA, Fran- (22) International Filing Date: cois C.; 42055 Camino Santa Barbara, Fremont California 24 March 2017 (24.03.2017) 94539 (US). (25) Filing Language: (74) Agent: MITROVIC, Andrej; Tokyo Electron U.S. Hold- English ings, Inc., 2400 Grove Blvd., Austin, Texas 78741 (US). (26) Publication Language: English (81) Designated States (unless otherwise indicated, for every (30) Priority Data: kind 62/316,021 31 March 2016 (31.03.2016) US AO, of national protection available): AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, (71) Applicant: TOKYO ELECTRON LIMITED [JP/JP]; DO, Akasaka Biz Tower, 3-1 Akasaka 5-chome, Minato-ku, HN, DZ, EC, EE, EG, ES, FL GB, GD, GE, GH, GM, GT, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, Tokyo 107-6325 (JP). KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, [Continued on next page] = (54) Title: CONTROLLING DRY ETCH PROCESS CHARACTERISTICS USING WAFERLESS DRY CLEAN OPTICAL EMIS- SION SPECTROSCOPY (57) : Described herein are architectures, platforms and methods for acquiring optical emission spectra from an optical emission spectro - Run Device Wafer 700 702 J scopy system by flowing a dry cleaning gas into a plasma processing chamber of the plasma processing system and igniting a plasma in the plasma processing chamber to initiate the waferless dry cleaning process. = Wafedess Dry Clean and OES collection 704 N.. = = Run Device Wafer — = 706 _ = f. Waferless Dry Clean and OES collection = \ 708 In-situ OES Data Analysis 710 = Send Signal to Controller whether to adjust WLDC process parameter based on OES intensity of selected byproduct wavelength = 1j2 • 4 _ = Run Device Wafer 714 = = Adjusted VVLDC parameter or same 11 ' parameters as initial redpe/OES Collection la Run Device Wafer 718 M kr) ei I terate Sequence until wafer lot completion Ir ----- ,-1 FIG. 7 . 720 IN ,-1 © ei O WO 2017/172536 Al MIDEDIM111101111111111111111111111111111111111111111111111011111111111111111111111111 MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC , VN, ZA, ZM, ZW. GN, GQ, GW, KM, ML, MR, NE, SN, TD, Published: TG). (84) Designated States (unless otherwise indicated, for every with international search report (Art. 21(3)) kind of regional protection available): ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, — before the expiration of the time limit for claims and to be republished in the event amendments (Rule 48.2(h)) amending of receipt the of