baber/WOPTO huggingface dataset:
Patent TW-432119-B (TW)
Title: Method for manufacturing thin film using atomic layer deposition
Inventor: KIM YEONG-KWAN
IPC: H01L21/205
Filed: 1998-11-25
Granted: 2001-05-01
Abstract: A thin film manufacturing method is provided. The method includes the step of chemically absorbing a first reactant on a substrate by injecting the first reactant into a chamber which the substrate is loaded. A physisorbed first reactant on the chemically absorbed first reactant is removed by purging or pumping the chamber. After the first reactant is densely chemically absorbed on the substrate by injecting the first reactant into the chamber, the physisorbed first reactant on the dense chemisorbed first reactant is removed by purging or pumping the chamber. A second reactant is chemically absorbed into the surface of the substrate by injecting the second reactant into the chamber. A physisorbed the second reactant on dense chemisorbed first reactant and the second reactant is removed by purging or pumping the chamber. A solid thin film is formed using a chemical exchange through densely absorbing the second reactant on the substrate by again injecting the second reactant into the chamber. According to the present invention, it is possible to obtain a precise stoichiometric thin film having a high film density, since the first reactant and the second reactant are densely absorbed and the impurities are completely removed by pumping or purging.
Patent TW-374972-B (TW)
Title: Apparatus and method which saves call related information when the status of recorded voice message is changed remotely
Inventor: CANNON JOSEPH M
IPC: H04M1/65
Filed: 1998-12-22
Granted: 1999-11-21
Abstract: A voice messaging system and method includes a receiver to receive information relating to an incoming telephone call and memory to store the information relating to the incoming call. A processor initiates an outgoing announcing message in response to the incoming call. A voice recorder records in the memory a voice message corresponding to the incoming call. A detector, is operatively associated with the processor, to detect a remote log-in such that the processor is remotely controlled to access a recorded voice message. An indicator visibly or audibly indicates an occurrence of the remote log-in. The processor permits a status of the voice message to be affected in memory while information relating to the voice message and/or information relating to the remote log-in which had affected the voice message is maintained.
Patent TW-I233837-B (TW)
Title: Titania catalyst and catalyst support composition and Fischer-Tropsch process using the same
Inventor: PLECHA STANISLAW
IPC: B01J23/84
Filed: 1999-04-30
Granted: 2005-06-11
Abstract: Supports for Fischer-Tropsch catalysts with increased strength and attrition resistance are formed by incorporating both silica and alumina into a support comprised primarily of titania; whereupon Fischer-Tropsch active metals can be composited with the support; the catalysts being particularly useful in slurry reactions.
Patent TW-440836-B (TW)
Title: Delay locked loop and delay locking method
Inventor: CHU YONG-GYU
IPC: G11C11/4076
Filed: 1999-02-24
Granted: 2001-06-16
Abstract: A phase comparator of a delay locked loop (DLL) and a delay locking method. The DLL includes a delay portion, a phase comparator and a charge pump. The phase comparator includes first through third flip-flops and a logic portion. The first flip-flop has a data input to which a power voltage is applied, a clock input to which a reference clock signal is applied, and a reset input to which an initializing signal is applied. The second flip-flop has a data input to which the output signal of the first flip-flop is applied, a clock input to which the reference clock signal is applied, and a reset input to which an output signal of the logic portion is applied. The output signal of the second flip-flop is a delay decreasing signal. The third flip-flip has a data input to which a power voltage is applied, a clock input to which a clock signal delayed by the DLL is applied, and a reset input to which the output signal of the logic portion is applied. The output signal of the third flip-flop is a delay increasing signal.
Patent TW-436572-B (TW)
Title: Latch
Inventor: JOHANSSON TORSTEN
IPC: E05B15/10
Filed: 1999-04-21
Granted: 2001-05-28
Abstract: A keeper and a latch secures a first member such as a door panel against a second member such as a corresponding frame. The keeper is adapted for attachment to the second member and engages the latch in a fastened position.
Patent TW-421632-B (TW)
Title: Elastic member for bicycle
Inventor: FUJII KAZAUHIRO
IPC: B62K25/28
Filed: 1999-03-17
Granted: 2001-02-11
Abstract: The object of this invention is to provide an elastic member for a bicycle that can easily cope with various shocks flexibly in an elastic member mounted in a damper for a simply constructed bicycle. In a bicycle damper provided with an outside member 80 and an inside member 82 arranged freely rotationally relatively on the inner circumference side of the outside member 80, a first elastic member 83 is arranged between the both members 80, 82 while being contactable with them and extended/shrunk by relative rotation between the both members 80, 82 so as to absorb the shock. The first elastic member 83 is provided with a first elastic body 83a and a second elastic body 83b. The second elastic body 83b is arranged beside the first elastic body 83a along the rotation direction and provided with elasticity different from that of the first elastic body 83a.
Patent TW-398973-B (TW)
Title: Elastic strand coating process
Inventor: KWOK KUI-CHIU
IPC: B05D7/20
Filed: 1999-03-17
Granted: 2000-07-21
Abstract: A method for applying fluids to a strand and useable for bonding adhesive coated strands to substrates in the production of bodily fluid absorbing hygienic articles, by drawing the strand along an isolated path, moving a fluid or adhesive fiber back and forth across a path of the strand as the fluid fiber is dispensed toward the strand, and capturing substantially all of the fluid fiber on the isolated strand, and in some applications contacting an adhesive coated strand with the substrate to bond the strand thereto. The adhesive fiber is vacillated back and forth across a path of the strand beyond opposing sides thereof to at least partially coat all sides thereof with adhesive. In bodily fluid absorbing hygienic articles, the methods substantially eliminate fabric stiffening and loss of moisture absorbing capacity thereof provide substantially uniformly bonding along the axial dimension of the strand to ensure uniform bunching of fabrics, optimum fluid absorption, and comfort.
Patent TW-497115-B (TW)
Title: Cathode ray tube
Inventor: TSUCHIYA YASUMASA
IPC: H01J29/87
Filed: 1999-04-14
Granted: 2002-08-01
Abstract: Provided is a cathode ray tube (CRT) equipped with enhancement area with excellent locking force, in which the panel formed inside with fluorescent screen and tube neck enclosing an electronic gun, the funnel connecting with panel and tube neck are included. The enhancement area is formed by burring and embedded method on the perimeter of panel boundary, and the enhancement area is formed with a bending portion that shifts the bending position of enhancement area from the molded matching line of CRT to the electronic gun side.
Patent TW-415027-B (TW)
Title: Self-aligned contact process
Inventor: LIN SEN-HUNG
IPC: H01L21/768
Filed: 1999-05-05
Granted: 2000-12-11
Abstract: The invention provides a method of forming a self-aligned contact. First a semiconductor substrate is provided. A conductive layer is formed on the substrate and the conductive layer is patterned to define a conductor structure. A silicon nitride layer is deposited on the patterned conductive layer wherein the silicon nitride layer on the conductive layer is thicker than that on the sidewall of the conductive layer. The silicon nitride layer is etched back such that a portion of the silicon nitride layer is remained to cover the conductive layer and a silicon nitride spacer is formed on the sidewall of the conductive layer for subsequent contact forming.
Patent TW-429559-B (TW)
Title: IC socket
Inventor: ITO SADAO
IPC: H05K7/10
Filed: 1999-07-16
Granted: 2001-04-11
Abstract: The present invention relates to a connecting device for IC that is releasably and replaceably mounted to the base. A conductor pattern 5 is formed on a circuit board 4 with the pitch same as the terminal pins 3 of the IC 2, and surrounding its outline fixed a mounting frame 6. IC 2 is inserted into the mounting frame 6, overlaying each of the terminal pins 3 onto the conductor pattern 5. An outer frame 10 is laid over the mounting frame 6, with an inner frame 7 covered in between, and secured to the mounting frame 6 by screws. The inner frame 7 includes a holding rib 8 projecting from its underside, which holds the terminal pins 3 and presses the conductor pattern 5 by the forth projecting from the screwed outer frame 10. In addition, protruding screws are penetrated through the outer frame 10 to press the centre of the holding rib 8 thereby avoiding the isolation of the holding rib 8, and the inner frame 7 is fitted together with the mounting frame 6 thereby preventing the holding rib 8 from being distorted into S shape, as well as securing a good contact between the terminal pins 3 and the conductor pattern 5.
Patent TW-483747-B (TW)
Title: Method and device for detecting status of breathing system by voice
Inventor: CHEN WEN-YUAN
IPC: A61B5/02
Filed: 1999-08-26
Granted: 2002-04-21
Abstract: The present invention relates to a method and a device for determining the status of a breathing system by voice. The method comprises the following steps: receiving audio signals formed by the voice generated from a breathing system, sampling the audio signals; arranging the signals, obtaining by calculation a set of parameters from the arranged signals, comparing said set of parameters with a set of modules representing the statuses of the breathing system, selecting a status of the breathing system according to the comparison result, and finally, proving an output including a possible condition.
Patent TW-451350-B (TW)
Title: Wet-etching facility for manufacturing semiconductor devices
Inventor: LEE SEUNG-KUN
IPC: H01L21/306
Filed: 1999-09-01
Granted: 2001-08-21
Abstract: There is provided a wet-etching facility for manufacturing semiconductor devices, wherein the etching process is performed for a wafer with its used surface faced down so that the by-products from the etching process are completely removed from the etching groove of the wafer by gravity, and the impurities on the back side of the wafer are sank down, and are not touched to the used surface of the other wafer thereby producing good quality of wafers. The wet-etching facility for manufacturing semiconductor devices comprises a bath containing an amount of chemical; a chemical supply part for supplying an amount of chemical to the bath; a chemical discharge part for discharging the chemical inside the bath to the outside; a wafer guide holding and fixing a wafer with its used surface faced down, and placing the wafer into a chemical; a transfer robot for loading and unloading the wafer into the wafer guide; and a chemical spray part for spraying the chemical with a high pressure such that the chemical flows along the surface of the wafer.
Patent TW-440754-B (TW)
Title: Peak-value and time-separation double detection apparatus
Inventor: WENG GUO-JR
IPC: G04F10/00
Filed: 1999-09-08
Granted: 2001-06-16
Abstract: This invention is about peak-value and time-separation double detection apparatus that can simultaneously detect peak value and arrival time of a single-pulse signal under the condition without increasing system complexity. This peak-value and time-separation double detection apparatus includes the followings: a receiving unit, which is used to receive the pulse signal to be detected; a peak-value detection unit, which is used to detect peak value of pulse signal; a delay unit, which is used to delay pulse signal; a comparison unit, which is used to adjust the peak value of pulse signal so as to automatically set suitable signal detection threshold and output a time-separation signal that corresponds to the arrival time of pulse signal; and a time-separation detection unit, which is used to calculate the arrival time of pulse signal based on the time-separation signal. Therefore, it is not necessary to require high signal to noise ratio for the peak-value and time-separation double detection apparatus of this invention and, additionally, suitable signal detection threshold can be set automatically.
Patent TW-476733-B (TW)
Title: Barium titanate ceramics with extremely high dielectric constants
Inventor: KUO DONG-HAU
IPC: C01F11/00
Filed: 1999-09-30
Granted: 2002-02-21
Abstract: It is an object of the present invention to provide improved BaTiO3 compositions of extremely high dielectric constants. Dielectric constants of 65,000 at room temperature, 120,000 at -20 DEG C, and > 20,000 below 70 DEG C can be obtained. The high dielectric constants are higher than those of as-sintered BaTiO3-based and even Pb(Mg1/3Nb2/3)O3-based ceramics which have been reported and widely used as capacitors in the electronic industry. This multi-doped BaTiO3-based ceramic has the formulation of [(Ba1-zSrz)1-xLax] (Ti1-yMgy)O3, where y=x/2, x < 0.03 and 0 < z < 0.2. Metal acetates, metal nitrates, titanium alkoxides, citric acid, and ethylene glycol are the required reactants for preparing the multi-doped BaTiO3-based ceramic powder by a polymeric route.
Patent TW-492889-B (TW)
Title: Combined vapor/liquid distributor, method for assembling the same, exchange column containing the same, method for collecting and distributing liquid/vapor, and process for cryogenic air separation
Inventor: ARMSTRONG PHILLIP ANDREW
IPC: B01D53/18
Filed: 1999-09-29
Granted: 2002-07-01
Abstract: A combined liquid/vapor distributor and method of assembly are disclosed together with a method for collection and distribution of a liquid and a vapor in an exchange column. The combined liquid/vapor distributor is an apparatus for distributing a liquid and a vapor to or from a packing in an exchange column. The apparatus includes a distributor and a deck above and adjacent the distributor. The distributor has at least one vapor riser, which has generally parallel spaced apart upright walls and an open top and an open bottom opposite the open top. The distributor also has at least one liquid trough adjacent the vapor riser. The liquid trough has an open top and a floor having at least one aperture. The floor is opposite the open top of the liquid trough and is attached to at least one wall of the adjacent vapor riser. The deck has a top and a bottom and at least one aperture vertically aligned with the open top of the vapor riser and at least one aperture vertically aligned with the open top of the liquid trough. The distributor is mounted on a support grate.
Patent TW-448676-B (TW)
Title: Dynamic concentration of announcement circuits
Inventor: GOLDMAN STUART O
IPC: H04M3/533
Filed: 1999-11-02
Granted: 2001-08-01
Abstract: A system in which centralized announcement platforms are connected to host switches over dedicated trunks, and remote switches needing announcement services send a signaling message to a host switch requesting a connection to the announcement platform. A connection is then established between the host switch and the remote switch over a regular trunk, and the full connection is completed over a dedicated circuit between the host switch and the announcement platform. Announcement message ID and other information required by the announcement platform is coded in the available parameter fields of a signaling message. Less total circuits are required and redundancy is provided.
Patent TW-447205-B (TW)
Title: Multiple network protocol encoder/decoder and date processor
Inventor: MINAMI JOHN SHIGETO
IPC: H04L29/06
Filed: 1999-11-18
Granted: 2001-07-21
Abstract: A multiple network protocol encoder/decoder comprising a network protocol layer, data handler, O. S. state machine, and memory manager state machines implemented at a hardware gate level. Network packets are received from a physical transport level mechanism by the network protocol layer state machine which decodes network protocols such as TCP, IP, user datagram protocol (UDP), PPP, and raw socket concurrently as each byte is received. Each protocol handler parses and strips header information immediately from the packet, requiring no intermediate memory. The resulting data are passed to the data handler which consists of data state machines that decode data formats such as email, graphics, hypertext transfer protocol (HTTP), Java, and hypertext markup language (HTML). Each data state machine reacts accordingly to the pertinent data, and any data that are required by more than one data state machine is provided to each state machine concurrently, and any data required more than once by a specific data state machine, are placed in a specific memory location with a pointer designating such data (thereby ensuring minimal memory usage). Resulting display data are immediately passed to a display controller. Any outgoing network packets are created by the data state machines and passed through the network protocol state machine which adds header information and forwards the resulting network packet via a transport level mechanism.
Patent TW-437003-B (TW)
Title: Method and device for separating products, mounted on a common substrate, from each other along a cutting line
Inventor: RISCHKE JOERG WERNER
IPC: H01L21/301
Filed: 1999-12-09
Granted: 2001-05-28
Abstract: The invention relates to a method and a device for separating products mounted on a common substrate, from each other, along (a) cutting line(s). The products each comprise one or more chips present on said substrate and connecting means connected thereto, the connecting ends remote from the chip of which are provided with solder balls bonded thereto. The products are clamped down on a supporting element by using a sub-atmospheric pressure, and the supporting element and a rotary cutting blade are moved relative to each other along the intended cutting line so as to cut through the substrate. A liquid is supplied at the location of said cutting line on either side of the substrate.
Patent TW-440899-B (TW)
Title: Micro-electronic structure, its method of manufacturing and its application in a memory device
Inventor: WENDT HERMANN
IPC: H01L21/02
Filed: 1999-12-10
Granted: 2001-06-16
Abstract: The purpose of the present invention is to realize a micro-electronic structure, which prevents the oxidation of the oxygen-sensitive structure (25). For this purpose it contains an electric conductive layer (10) made of platium-Iridium alloy. This Iridium should in the treatment of the microelectronic structure in an oxygen-containing atmosphere, and it prevents the oxygen diffusion through the binding of oxygen by the electric conductive layer (10), and thus it protects the oxygen-sensitive structure (25) under the electric conductive layer (10).
Patent TW-426996-B (TW)
Title: Method for frbricating ferroelectric capacitor memory device
Inventor: YU YONG-SIK
IPC: H01L27/108
Filed: 1999-12-17
Granted: 2001-03-21
Abstract: The present invention discloses a method for fabricating a ferroelectric capacitor memory device capable of preventing the Bi component in a ferroelectric layer from volatilizing or diffusing. The method according to the present invention comprises the steps of: providing a semiconductor substrate in which a transistor and a storage node are formed; depositing a conductive film for storage electrode on the semiconductor substrate; forming a first SBT (SrBi2Ta209) layer; crystallizing the first SBT ferroelectric layer within a temperature range that can prevent volatilizing or diffusing of Bi component in the first SBT ferroelectric layer; forming a second SBT ferroelectric layer on the first SBT ferroelectric layer; crystallizing the second SBT ferroelectric layer at a selected temperature so that the second SBT ferroelectric layer has a Perovskite structure; forming a third SBT ferroelectric layer on the second SBT ferroelectric layer; crystallizing the third SBT ferroelectric layer within a temperature range that can prevent volatilizing or diffusing of Bi component in the third SBT ferroelectric layer; forming a ferroelectric layer by furnace-annealing the first to third SBT ferroelectric layers; forming a second conductive film for plate electrode on the ferroelectric layer; forming a capacitor by patterning the second conductive film, the ferroelectric layer and the first conductive film in a selected shape, in which the capacitor comprises a plate electrode, a ferroelectric layer and a storage electrode.
Patent TW-507185-B (TW)
Title: Organic electroluminescent display device
Inventor: KIMURA MUTSUMI
IPC: G09F9/30
Filed: 1999-12-27
Granted: 2002-10-21
Abstract: The invention provides a method and apparatus to obtain accurate gradation by obtaining an accurate ratio of light emitting parts in a display device which implements gradation by forming a plurality of TFTs and a plurality of OELDs in each pixel, interconnecting the TFTs and OELDs, and switching an on and off state of the TFTs, and controlling a light emitting area of the OELDs. A plurality of OELDs have the same shape, and gradation can be implemented by controlling the number of OELDs that emit light at a given time. Preferably a plurality of OELDs have a round shape. Also preferably plurality of OELDs are arranged at the same interval in a vertical and/or horizontal direction. According to this structure, because the light emitting areas of the plurality of OELDs become equal to each other, by controlling the number of OELDs, a ratio of the light emitting areas can be accurately obtained.
Patent TW-451303-B (TW)
Title: Quantum thin line producing method and semiconductor device
Inventor: FUKUMI KIMITAKA
IPC: H01L27/115
Filed: 2000-01-17
Granted: 2001-08-21
Abstract: A Si protruding portion 35 is formed on a Si substrate 31 by opportunely using the general film forming technique, photolithographic technique and etching technique. A second oxide film 36 is formed to fill up a space between Si protruding portions 35, and the surface is flattened by the CMP method or the like. Then, the second oxide film 36 is subjected to anisotropic etching to form a Si exposed portion 35a at the top of the Si protruding portion 35. A Si thin line 38 is made to grow in this Si exposed portion 35a, and then a third oxide film 39 for isolating the Si thin line 38 from the Si substrate 31 is formed through oxidation. A quantum thin line is thus formed at low cost without using any special technique of SOI or the like. Furthermore, the substrate surface is flattened, allowing the formation of a single electron device or a quantum effect device to be easy. The quantum thin line 38 is isolated from the Si substrate 31 by the third oxide film 39, completely confining the electron. With this arrangement, a quantum thin line that has good substrate surface flatness and is able to form a complete electron confining region is formed by using a semiconductor substrate of a Si substrate or the like.
Patent TW-432601-B (TW)
Title: Formation method for dielectric
Inventor: SHIAU JR-SHIANG
IPC: H01L21/76
Filed: 2000-01-26
Granted: 2001-05-01
Abstract: A formation method for dielectric is briefly described as follows: firstly, providing a substrate having a lead formed thereon; next, forming a first dielectric layer on the substrate and the lead; applying a first bias on a die during forming the first dielectric; then, forming a second dielectric layer on the first dielectric in which a second bias is applied on the die during forming the second dielectric, and the second bias is lower than the first bias.