baber/WOPTO huggingface dataset:
Patent JP-H06104539-A (JP)
Title: Structure of metallic board
Inventor: TAKAHASHI KAZUHIKO
IPC: H05K1/05
Filed: 1992-09-22
Abstract: PURPOSE:To distribute pressing force so that resist, wiring conductor, dielectric layer, and the like are protected against fracture or short circuit by widening the wiring conductor traversing a folded part or additionally providing the wiring conductor at the traversing part with a conductor layer. CONSTITUTION:Copper foil is employed in wiring conductor 2 and a conductor layer of same material as the wiring conductor 2 having same thickness is selected for conductor layers 7-1, 7-2. The conductor layers 7-1, 7-2 are provided while sandwiching the wiring conductor 2 but only the conductor layer 7-1 may be provided alternatively. Since the conductor layers 7-1, 7-2 are provided along with the wiring conductor 2, pressure of a pushing metal being applied on a folded part 5 is distributed. Widening of the wiring conductor 2 traversing the folded part 5 also contributes to pressure distribution. This structure eliminates possibility of fracture of resist 1-3 on a metal board 1, the wiring conductor 2, the dielectric layer 1-2, and the like during folding work.
Patent JP-H06131269-A (JP)
Title: Information processor
Inventor: FUJIMAKI OSAMU
IPC: G06F11/16
Filed: 1992-10-16
Abstract: PURPOSE:To read only data whose error is detected out of an SVP storage part again and set it again by finding the address of read data from a RAM where an error is detected in the SVP storage part and indicating a read of the data stored in this address. CONSTITUTION:An address specifying circuit 10 finds the address of the read data from the RAM 1 where the error is detected in the SVP (service processor) storage part 2 by adding addresses held in an error address holding register 7 and a base address holding register 3, and indicates the read of the data stored in this address. The SVP storage part 2 reads the data out of the address and stores the data in a write data storage register 5, and further stores an address specification register 4 with the address held in the error address holding register 7 as a write address for the RAM 1 at the same time. Then the data stored in the write data storage register 5 is written in the address in the address specification register 4.
Patent JP-H02124985-A (JP)
Title: Board marker ink composition
Inventor: KODERA MASAHIRO
IPC: C09D11/16
Filed: 1988-11-02
Abstract: PURPOSE:To obtain the title composition which has excellent erasability and long-term stability and hardly causes drying up of the core of a pen by dispersing a coloring agent, a specified binder, a release agent containing a silicone surface active agent, and a water-insoluble inorganic powder in water. CONSTITUTION:An ink composition comprising a water dispersion containing, on a solid basis, 0.1-8wt.% coloring agent, 0.1-2wt.% binder comprising a water- soluble synthetic resin or a synthetic acrylic resin emulsion, 1-10wt.% release agent containing a silicone surface active agent, and 0.2-8.0wt.% water-insoluble inorganic powder. As the water-soluble synthetic resin, a polyvinyl alcohol having a degree of polymerization of 1,000 or lower is preferably used in particular. As the silicone surface active agent, a copolymer wherein the hydrophobic part comprises a silicone component and the hydrophilic part comprises an ether component is suitably used; in particular, a graft copolymer wherein a polyether side chain is bound to a straight chain consisting of dimethylpolysiloxane is most suitable.
Patent JP-H10171273-A (JP)
Title: Transfer method and image forming device
Inventor: SUGIMOTO HIROYUKI
IPC: G03G15/16
Filed: 1997-10-13
Abstract: PROBLEM TO BE SOLVED: To satisfactorily reduce deterioration in image quality caused by pre-transfer or the like by making potential of a transfer body on a contact part to zero or to the potential in the same polarity as static charge characteristic of the image carrier by suppressing effect suppressing a formed electric field. SOLUTION: In this device, a transfer electric field is formed in a transfer nip part by performing the electric operation for applying the charge to an intermediate transfer belt 7 on applying a transfer voltage Vt from a transfer bias power source to an outlet roller 12, and the outlet roller 12 constitutes a transfer electrode to impart the charge to the intermediate transfer belt 7.  Then, in a transferring part, the charging condition, resistance value of the intermediate transfer belt 7 as a transferring body, the output value of the transfer bias power source or the like is severally set as the optimum transferring condition so that the potential Vnip of a rear side of the intermediate transfer belt 7 (surface on side being held in non-contact with photoreceptor drum 1) as the transfer body on at least a part of the transferring nip part becomes to zero or the potential in the same polarity as the charge polarity of the photoreceptor drum 1.
Patent JP-H02124040-A (JP)
Title: Flower pot
Inventor: TAKADA NAOKAZU
IPC: A01G9/02
Filed: 1988-11-04
Abstract: PURPOSE:To extremely easily perform the culture of a plant without necessitating frequent watering by putting a culture medium in the main body of a pot having water-permeable layer, a water-storage part and an aeration tube at respective specific positions, planting a vegetable and feeding water to the water-storage part. CONSTITUTION:The main body of a pot 1 made of porcelain, synthetic resin, etc., is charged with a medium such as KANUMA-TSUCHI, AKATAMA- TSUCHI or bark and a plant is planted in the medium. Water is supplied to a water-storage part 7 connected to a water-permeable layer 8 placed on a bottom plate 2 inserted between the circumferential wall 4 and the inner tube 5 of the pot main body. The water is absorbed through the side surface of the water-permeable layer into the water-permeable layer and a definite quantity of water is absorbed into the medium by the capillary phenomenon of the structure 10. Outer air is supplied to the medium via an aeration tube 3 extending through the bottom plate 2 to protrude the top end into the main body of the pot. A vegetable can be easily cultured by the use of the pot without necessitating frequent application of water to the vegetable.
Patent JP-H1099596-A (JP)
Title: Fitting for clothes drying tool
Inventor: HIGANO TAKESHI
IPC: D06F57/12
Filed: 1996-09-30
Abstract: PROBLEM TO BE SOLVED: To mount a fitting with adjustments being made in accordance with the width of a material of be installed. SOLUTION: A fitting 1 is constituted of a pair of holding plates 2, 2 and installation plates 3, 3 fixed by fixing screws to rear faces in front parts of the holding plates. Each of the pair of the holding plates 2, 2 is constituted of a side plate 5, a projecting plate 10 which, being formed in front of the side plate 5, projects outwards, and a front plate 6 which, being installed in front of the projecting plate 10, is square to the side plate 5. The projecting plate 10 is formed for the purpose of increasing the breadth of the front plate 6 which is an installation face for a drying goods. The front plate 6 has, in an upper and a lower part, adjustment slots 7, 7 which are long from side to side and has, in an upper and a lower part of its edge, semicircular cutouts 8, 8.  The side plate 5 has fastening holes 9,..., 9 formed at three places at intervals in the longitudinal direction. Each of the installation plates 3, 3 has a rectangular shape which is long from side to side and has, at the center, an installation section 12 which is cut spirally inside byburring and has fixing holes 11, 11 at an angle on both sides of the installation section 12.
Patent JP-H09121371-A (JP)
Title: Voice encoding and decoding system
Inventor: SUGIYAMA YUTAKA
IPC: H04M7/00
Filed: 1995-10-26
Abstract: PROBLEM TO BE SOLVED: To provide a voice encoding system with which a DTMF signal (tone signal) can be also transmitted and reproduced as data and further, the other information can be transmitted or nothing can be transmitted when there is no voice. SOLUTION: A voice encoding device 10 is provided with a voice encoder 5 respectively connected to a microphone 1, to which a sound signal is inputted, and a data terminal 2, to which a data signal is inputted, so as to output a voice encoding signal 4 while receiving an input sound signal from the microphone 1, voice presence/absence discriminator 6 or discriminating the presence/ absence of voice in the input voice signal 3 by monitoring the input sound signal 3, and data generator 9 for receiving the output of the voice presence/ absence discriminator 6 and adding the voice encoding signal 4 when there is a voice and when no voice, adding a data generator output signal 8 including a data signal 7 supplied from a data terminal to respective control bits and outputting them.  Based on the information of control bits as mentioned above, either a voice decoding means for decoding the sound signal or a data decoding means for decoding the data signal is selected.
Patent JP-H11116228-A (JP)
Title: Crucible for melting silicon and its production
Inventor: WAKITA SABURO
IPC: C01B33/02
Filed: 1997-10-13
Abstract: PROBLEM TO BE SOLVED: To inexpensively and easily obtain an industrially used crucible for melting silicon and further a high-purity quartz crucible of a shape deviating from standards by adopting a laminated structure of which the inside layer consists of a high-purity silica layer and the outside layer consists of a low- purity silica layer. SOLUTION: (A) A wax mold 1 having the same shape as the shape of the inner space of the crucible is immersed into a slurry consisting of high-purity molten silica powder of purity >=99.9% and colloidal silica and is then pulled up to form the slurry layer on the surface of the wax mold 1. Next, high-purity molten silica sand of purity >=99.9% is sprayed to the slurry surface to form a stucco layer, by which the high-purity silica layer 2 is formed on the surface of the wax mold 1. (B) A low-purity silica layer 3 is formed on the high-purity silica layer 2 by using the low-purity molten silica powder of purity <99.9% and low-purity molten silica sand in place of the high-purity silica used in the stage A to the wax mold 1 formed with the high-purity silica layer 2 and applying the same operation as A. (C) The wax mold 1 is removed by melting.
Patent JP-H02124987-A (JP)
Title: Coating material composition
Inventor: INOUE TOSHIHIRO
IPC: C09D133/04
Filed: 1988-11-04
Abstract: PURPOSE:To obtain a coating material composition excellent in compound stability and cement alkali resistance and having good rubber elasticity by using a polymer latex having a specified composite particle structure as binder. CONSTITUTION:In producing a coating material composition consisting of an inorganic filler and a polymer latex as binder, the binder comprises a polymer latex having a composite particle structure wherein a particle of a polymer latex A envelops a particle of a polymer latex B; the polymer latex A is a copolymer latex obtained by emulsion polymerization of 0.1-20wt.% ester of an alpha,beta-ethylenically unsaturated carboxylic acid with a polyhydric alcohol, 0.1-20wt,% alpha,beta-ethylenically unsaturated acid, and 60-99.8wt.% alpha,beta-ethylenically unsaturated carboxylic acid ester other than said ester; and the polymer latex B is a copolymer latex obtained by emulsion polymerization of 5-85wt.% aliphatic vinyl monomer and 0-20wt.% alpha,beta-ethylenically unsaturated acid.
Patent JP-H10124828-A (JP)
Title: Method and device for inspecting magnetoresistive head
Inventor: KAGAYA MASANORI
IPC: G11B5/455
Filed: 1996-10-22
Abstract: PROBLEM TO BE SOLVED: To enable inspection of potential Barkhausen noise and the like with good reproducibility and in a short time by applying to an MR(magnetoresistive) head an external magnetic field as a stress before measuring the standard characteristic of the MR head. SOLUTION: The voltage produced by an optional waveform generator 6 is amplified by a coil current amplifier, and then applied to a coil unit 4 for generating a magnetic field, with the magnetic field 9 generated. The intensity, frequency, polarity and the number of times of the magnetic field 9 are set by a computer 8 connected to the optional waveform generator 6. The required magnetic field 9 can be applied to an MR head 1 by loading it to a coil unit 4. In measuring the standard characteristic of the MR head, the magnetic field 9 is applied to the MR head with a field strength of ±20 to ±50 gauss and a frequency of 50 to 60Hz, with a current supplied by a sense current supply source 2 as required for the MR head. For example, the supply of a few mA to a few tens of mA causes the MR head to generate an output voltage for dealing with the applied magnetic field.
Patent JP-S63134403-A (JP)
Inventor: ENOTANI KATSUHIKO
IPC: B65F3/24
Filed: 1986-11-21
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。
Patent JP-H03140070-A (JP)
Title: Moving vector detector
Inventor: SEKINE MASAYOSHI
IPC: G06T7/20
Filed: 1989-10-26
Abstract: PURPOSE:To detect a moving vector with high accuracy even from a largely moving object and to detect even information of moving of an object of a minute pattern with high space resolution by revising a size of an operation block of a moving vector in response to a picture. CONSTITUTION:A circuit 53 extracting a characteristic of an input picture signal and deciding the size and shape of a block at total sum circuits 46, 48 consists of a characteristic extraction circuit 54 extracting the characteristic from an output signal of a low pass filter(LPF) 31, a block size calculation circuit 56 calculating the size and shape of the optimum block according to the output of the characteristic extraction circuit 54, the block size and a latch circuit 58 latching the output of the block size calculation circuit 56 and applying the latched output to a control input of the total sum circuits 46, 48. The moving vector is detected with the size and shape of the characteristic of the picture. Thus, the moving vector is detected with high accuracy in response to the state of the object and a high detection range is obtained even to a minute pattern picture.
Patent JP-H04152631-A (JP)
Title: Semiconductor device
Inventor: MOMOTAKE YASUHITO
IPC: H01L21/768
Filed: 1990-10-17
Abstract: PURPOSE:To enable the stable contact in the connecting hole part in a multiple layer aluminum wiring structure to be realized by a method wherein a laminated layer structure film comprising a titanium layer and a titanium compound layer is used as the underneath layer of an aluminum wiring layer as an upper layer in contact with another aluminum wiring layer as a lower layer through the intermediary of a connecting hole. CONSTITUTION:The laminated layer structure comprising a titanium layer 101 and a titanium compound layer 102 is used as the underneath film of the second aluminum wiring layer 100 as an upper layer in contact with the first aluminum wiring layer 4 as the lower layer in a through hole 6 part. Thus, the reaction of the titanium layer 101 to the aluminum containing layer 104 as the upper layer is restrained and after the formation of the layer 104, the fluoride and the oxide of the residual aluminum on the surface of the layer 4 are taken in as those of titanium to be decomposed in the connecting hole 6 part by heat treatment step. Furthermore, the titanium layer 101 reacts to the layer 4 to form TiAl3 while the titanium compound layer 102 fills the role of making the interface between the titanium layer 101 and the aluminum wiring layer 104 sufficiently react to each other.
Patent JP-H10125912-A (JP)
Title: High-voltage mos transistor and manufacture thereof
Inventor: FUKUMOTO AKIRA
IPC: H01L29/78
Filed: 1996-10-22
Abstract: PROBLEM TO BE SOLVED: To provide a high-voltage MOS transistor, which is small in on resistance, is small in irregularity in the manufacture of the transistor and has stable characteristics. SOLUTION: Extension drain regions 126, which are extendedly formed in the direction of a source region 321 and the opposite direction to the direction of the region 121 and consist of an N-type semiconductor material, are provided in a state that the regions 126 come into contact with a drain region 124 consisting of an N<+> semiconductor material and extension drain side regions consisting of a P<-> semiconductor material are provided on both sides of the regions 126 in a state that the extension drain side regions come into contact with the region 124 and the regions 126. A reverse bias voltage is applied between a substrate 111 and the extension drain side regions to control a current, which is made to flow through a channel under the lower part of a gate electrode 117.
Patent JP-2000109400-A (JP)
Title: Silicon-doped gallium arsenide single crystal, its production and device for the same production
Inventor: NAKAMURA RYOICHI
IPC: C30B27/00
Filed: 1998-10-01
Abstract: PROBLEM TO BE SOLVED: To provide a single crystal having a good distribution of carrier concentration and also to provide a production process of the single crystal and a device for the production process. SOLUTION: In the growth stage of this production process by a vertical boat method using a liquid encapsulant, due to Si transfer accompanying the reaction of a liquid encapsulant layer with a GaAs raw material melt layer, the Si concentration in the liquid encapsulant becomes higher in the lower part being in the vicinity of the interface between the liquid encapsulant layer and the GaAs raw material melt layer, and steeply decreased in the direction from this lower part to the upper part removed from the interface, and the longer the distance from a point in the encapsulant layer to the interface, the lower the Si concentration at the point.  By using this phenomenon, the liquid encapsulant layer is agitated at an appropriate point of time for an appropriate period of time in the crystal growth stage, to control the Si concentration in the GaAs raw material melt layer and to produce an Si-doped GaAs single crystal such that a curve plotted with the logarithmic value of (1-g) as the abscissa (wherein g is a solidification ratio of the single crystal in the crystal growth stage and used as a measure of a position within the single crystal) and with the logarithmic value of carrier concentration in the single crystal at positions specified by their respective solidification ratios as the ordinate,  is a broken line consisting of a straight line having a negative gradient value within the range of the solidification ratio g of 0.1 to 0.8 and a gradient absolute value of >0.6 and another straight line having a gradient absolute value of <0.6, both of which are joined to each other.
Patent JP-H04154215-A (JP)
Title: Output buffer circuit for master slice lsi
Inventor: NUNOGAMI HIROYUKI
IPC: H03K19/173
Filed: 1990-10-17
Abstract: PURPOSE:To eliminate the occurrence of ringing in an output signal outputted from a driving transistor by constituting a control transistor with internal logic elements using the same number of PMOSFETs and NMOSFETs. CONSTITUTION:A voltage applied to the control electrodes of driving transistors 1 and 2 is suppressed at low when an input signal is changed by a control circuit constituted of internal logic elements of master slice LSI having the same number of the first electroconductive transistors 6, 7, 12, and 13 and the second electroconductive transistors 8-11, while the voltage is restored to normal when the input signal is stable. Thus, driving transistors 1 and 2 can be enhanced in conductive resistance, and ringing that occurs in an output signal outputted from the driving transistors 1 and 2 can be suppressed. Further, when the input signal is stable, by using control transistors 6-13 to restore a control voltage applied to driving transistors 1 and 2 to normal, driving transistors 1 and 2 restore their load driving performance to normal.
Patent JP-H05147897-A (JP)
Title: Load pushing and unloading machine
Inventor: FUJII DAISUKE
IPC: B66F11/00
Filed: 1991-10-25
Abstract: PURPOSE:To provide a load pushing and unloading machine that is convenient in use at a time when a heavy load is carried up to where it is desired and the stacked load is unloaded. CONSTITUTION:This machine is provided with a load support frame 2 which pushes up a load (a) onto an upper surface of a machine frame 1 with such a structure as capable of being stretched across a slope between the ground and a spot where the load (a) is intented to be carried up free of traveling up and down, a locking mechanism locking a vertical movement of the load supporting frame 2 to the machine frame 1 and this supporting frame 2, and a push-up mechanism (gas spring 17) making the load supporting frame 2 move up and down in keeping the load (a) supported intact when this locking mechanism 3 is released, respectively.
Patent JP-S62115225-A (JP)
Inventor: HASUI HIROSHI
IPC: A01K91/06
Filed: 1985-12-12
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。
Patent JP-H06133422-A (JP)
Title: Hot-line deterioration inspecting device for aerial wire
Inventor: UCHIDA SHINGO
IPC: G01N29/14
Filed: 1992-10-19
Abstract: PURPOSE:To make it possible to fit an AE sensor to an electric-wire coating, and detect a signal from a deteriorated part in a hot-line state efficiently. CONSTITUTION:A holder 20 made out of material having an acoustic impedance approximately equal to that of the coating 7 of an aerial wire 29, positioned at the outside of a discharging clamp cover 1, is fitted to the coating 7, and an AE sensor 9 for inspecting the deterioration of the aerial wire 29 by detecting the acoustic radiation from the aerial wire 29 vibrated in a hot-line state is fitted to this holder 20. This holder 20 is composed of halved segments 11a and 11b, and one-end parts of them are constituted as hinge parts and the other end parts are as released fixed parts.
Patent JP-H10330508-A (JP)
Title: Gas barrier material
Inventor: IKEDA KAORU
IPC: C08J5/18
Filed: 1997-10-14
Abstract: PROBLEM TO BE SOLVED: To obtain a material excellent in gas barrier properties under low- humidity and high-humidity conditions and in transparency and melt moldability by using a resin which contains a specified amount of repeating units having a specified structure and has a specified oxygen permeability. SOLUTION: This material comprises a resin containing at least 30 mol.% repeating units represented by the formula I (wherein R<1> is a 1-2C alkyl; and R<2> is H or a 1-3C alkyl) and has an oxygen permeability at 20 deg.C and a relative humidity of 100% of at most 30 ml.20 μm/m<2> .day.atm. It is desirable that this resin has a stereoregularity regulated to a syndiotactic or isotactic triad fraction of at least 60 mol.%, a glass transition temperature of 45-95 deg.C when oven-dried, and a saturation moisture absorption at 20 deg.C and 65% RH of 0.5-15 wt.%. This resin is produced by polymerizing a monomer represented by formula II (wherein R<1> is methyl or ethyl; and X is an alkoxyl, hydroxyl, etc.), and then reducing the polymer.
Patent JP-H09129497-A (JP)
Title: Laminated capacitor
Inventor: CHAZONO KOICHI
IPC: H01G4/30
Filed: 1995-10-27
Abstract: PROBLEM TO BE SOLVED: To provide a laminated capacitor having a low electrostatic capacitance and a high quality factor and also having no defect in the internal structure. SOLUTION: In a pair of internal electrodes 22 which are adjacently located through a dielectric layer 21, an electrostatic capacitor forming region 25 is formed in a manner that the side edge part on one side of the internal electrode piece 22b of the internal electrode 22 on one side of layer is opposing to the side edge part on the other side of the internal electrode piece 22b of the internal electrode 22 of other layer, and the internal electrode pieces 22b are formed by shifting in their widthwise direction. Besides, the side edge part of the internal electrode pieces 22b are formed in such a manner that their thickness becomes gradually thinner toward their widthwide direction, and at the same time, the side edge part of the internal electrode pieces 22b on the side, which is not included in the electrostatic capacitor forming region 25, is formed curvedly.