Patent TW-202037711-A (TW)
Title: Layered body, elliptical polarization plate and polymerizable liquid crystal composition
Inventor: KASAI TATSUAKI
IPC: B32B9/00
Filed: 2020-01-17
Abstract: A layered body containing a vertically oriented liquid crystal cured film and a base material, wherein the vertically oriented liquid crystal cured film is a cured product of a polymerizable liquid crystal composition which has been cured while the polymerizable liquid crystal compound was in a state of being oriented in an orthogonal direction with respect to the plane of the liquid crystal cured film, and the vertically oriented liquid crystal cured film satisfies at least one from among formulae (1) and (2), and also satisfies at least one from among formulae (3), (4), (5), and (6). F(A) > F(C) (1) Si(A) > Si(C) (2) N(B) > N(C) (3) P(B) > P(C) (4) F(B) > F(C) (5) Si(B) > Si(C) (6) (In formulae (1) to (6): F(A) represents the ratio (atom%) of fluorine element present in the liquid crystal cured film at the boundary, on the side facing away from the base material, of the vertically oriented liquid crystal cured film; F(B) represents the ratio (atom%) of fluorine element present in the liquid crystal cured film at the boundary, on the base material side, of the vertically oriented liquid crystal cured film; F(C) represents the ratio (atom%) of fluorine element present in the liquid crystal cured film at a site corresponding to 100 nm from the boundary, on the side facing away from the base material, of the vertically oriented liquid crystal cured film in the thickness direction on the liquid crystal cured film side; Si(A) represents the ratio (atom%) of silicon element present in the liquid crystal cured film at the boundary, on the side facing away from the base material, of the vertically oriented liquid crystal cured film; Si(B) represents the ratio (atom%) of silicon element present in the liquid crystal cured film at the boundary, on the base material side, of the vertically oriented liquid crystal cured film; Si(C) represents the ratio (atom%) of silicon element present in the liquid crystal cured film at a site corresponding to 100 nm from the boundary, on the side facing away from the base material, of the vertically oriented liquid crystal cured film in the thickness direction on the liquid crystal cured film side; N(B) represents the ratio (atom%) of nitrogen element present in the liquid crystal cured film at the boundary, on the base material side, of the vertically oriented liquid crystal cured film; N(C) represents the ratio (atom%) of nitrogen element present in the liquid crystal cured film at a site corresponding to 100 nm from the boundary, on the side facing away from the base material, of the vertically oriented liquid crystal cured film in the thickness direction on the liquid crystal cured film side; P(B) represents the ratio (atom%) of phosphorus element present in the liquid crystal cured film at the boundary, on the base material side, of the vertically oriented liquid crystal cured film; and P(C) represents the ratio (atom%) of phosphorus element present in the liquid crystal cured film at a site corresponding to 100 nm from the boundary, on the side facing away from the base material, of the vertically oriented liquid crystal cured film in the thickness direction on the liquid crystal cured film side.).