baber/WOPTO huggingface dataset:
Patent TW-386159-B (TW)
Title: Soil testing assemblies
Inventor: HENKE ROBERT
IPC: G01N3/32
Filed: 1998-06-09
Granted: 2000-04-01
Abstract: 19970049341P
Patent TW-396026-B (TW)
Title: Fast heat-conductive stewing/warm keeping pot
Inventor: LIN SHIOU-MAN
IPC: A47J36/36
Filed: 1998-06-22
Granted: 2000-07-01
Abstract: This is a fast heat-conducive stewing/warm keeping pot which consists of a pot body, an insulating layer, a base, and an upper lid. The sidewall and the bottom of the pot body have appropriate thickness. Its interior is vacuumed and filled with appropriate amount of activating fluid. The insulating layer surrounds the external wall of the pot body and maintains an appropriate thickness with a vacuum layer. The base also has an appropriate inner vacuumed interval, which can cover the bottom of the pot body. The interior of the upper lid also has a vacuum layer, which can cover the top portion of the pot body. Such arrangement with these components provides a fast stewing and warm keeping pot and saves energy.
Patent TW-389956-B (TW)
Title: Modified high density plasma enhanced chemical vapor deposition dielectric used for improve CMP performance of dielectric planarization
Inventor: LIN CHI-FA
IPC: H01L21/316
Filed: 1998-08-26
Granted: 2000-05-11
Abstract: A wafer planarization process which combines high density plasma chemical vapor deposition (HDP-CVD) process and chemical mechanical polishing (CMP) process is disclosed. This process includes the steps of (a) forming a first HDP-CVD layer on the surface of a semiconductor wafer using a first HDP-CVD composition having a higher etching/depositing component ratio and thus a lower CMP removal rate; (b) forming a second HDP-CVD layer on the first HDP-CVD layer using the same HDP-CVD process but with a second HDP-CVD composition having a lower etching/depositing component ratio and thus a higher CMP removal rate; and (c) using a chemical mechanical process to remove at least a part of the second HDP-CVD layer using the first HDP-CVD layer as a stop layer. A protective layer with the same etching/deposition components but a different ratio than the sacrificial layer can be deposited on the sacrificial layer to minimize the dishing effect during the initial stage of the chemical mechanical polishing process.
Patent TW-446781-B (TW)
Title: Method for finishing lace cloth
Inventor: LIN WEN-SHUEI
IPC: D06B5/22
Filed: 1998-10-09
Granted: 2001-07-21
Abstract: The present invention relates to a method for finishing a lace cloth, which mainly comprises winding a yarn cloth, installed with a to-be-finished lace cloth thereon, on a roll, in which the roll can be vertically clamped on a roll placement frame, and the roll placement frame capable of clamping a plurality of rolls is vertically mounted in a dyeing stove of a finishing machine. The hollow bottom seat of the roll placement frame can be in communication with a pump so that the pump can deliver the dye solution in the dyeing stove, and allow the dyeing solution to be forced into the reel of the roll and be delivered to the outside from the inside and be sucked in from the outside, so that the dyeing solution is forced to flow in the stove. Thereby, the lace cloth on the roll can be dyed uniformly while increasing the productivity.
Patent TW-493215-B (TW)
Title: Method and apparatus for reducing thermal gradients within a ceramic wafer support pedestal
Inventor: BURKHART VINCENT E
IPC: H01L21/00
Filed: 1998-10-12
Granted: 2002-07-01
Abstract: A method and apparatus for reducing the thermal gradients within a ceramic wafer support pedestal. Specifically, the present invention is a heater controller that limits the amount of power that is applied to a resistive heater embedded within a ceramic pedestal. In a first embodiment of the invention limits the current that is delivered to the heater. In a second embodiment of the invention, the power applied to the heater coil is clamped to a maximum level.
Patent TW-429576-B (TW)
Title: Manufacturing method for metal interconnect
Inventor: LAN SHR-MING
IPC: H01L21/768
Filed: 1998-10-14
Granted: 2001-04-11
Abstract: A manufacturing method for metal interconnect which uses the resultant dielectric layer with a low dielectric coefficient to separate the metal interconnects for improving the device performance. The dielectric formed by this method comprises a silicon dioxide layer containing voids. Because the silicon dioxide containing voids has a low dielectric coefficient, it can prevent the RC delay and the crosstalk between metal interconnects.
Patent TW-457276-B (TW)
Title: Peroxidically crosslinkable silicone rubber composition and process for preparing the same
Inventor: ACHENBACH FRANK
IPC: C08K9/04
Filed: 1999-02-23
Granted: 2001-10-01
Abstract: Peroxidically crosslinkable silicone rubber compositions containing a filler which has covalently bound Si-H-containing groups.
Patent TW-415075-B (TW)
Title: Semiconductor device and method of manufacturing the same
Inventor: ASHIDA YUTAKA
IPC: H01L21/02
Filed: 1999-02-26
Granted: 2000-12-11
Abstract: The present invention relates to a method of manufacturing a semiconductor device including steps of fabricating a capacitor. In a semiconductor device having a capacitor, the capacitor includes a lower electrode, a dielectric oxide film formed on the lower electrode, and an upper electrode formed the dielectric oxide film and formed of at least platinum in which oxygen is contained at a concentration of more than 1 x 10<20> atoms/cm<3>. Accordingly, peeling of the upper electrode can be prevented and electric characteristics of the capacitor can be improved.
Patent TW-I235749-B (TW)
Title: Process for manufacturing an epoxide
Inventor: CATINAT JEAN-PIERRE
IPC: C07D301/32
Filed: 1999-03-19
Granted: 2005-07-11
Abstract: Continuous process for manufacturing an epoxide, according to which an olefin is reacted, in a reactor in the liquid phase, with a peroxide compound in the presence of a zeolite-based catalyst and in the presence of a solvent, and a gaseous compound is introduced continuously into the reactor at a flow rate which is sufficient to entrain at least some of the epoxide produced, which is recovered with the gaseous compound at the point at which it leaves the reactor.
Patent TW-542768-B (TW)
Title: Device and method for polishing a semiconductor substrate
Inventor: MAURY ALVARO
IPC: B24B37/04
Filed: 1999-04-01
Granted: 2003-07-21
Abstract: The present invention provides a method for polishing a semiconductor substrate having a first layer of material formed on a second layer of different material. In one embodiment, the method includes placing the semiconductor substrate against a polishing surface and polishing the semiconductor substrate, producing a first vibration by polishing and removing the first layer, producing a second vibration by polishing at least a portion of the second layer, and detecting a change from the first vibration to the second vibration with a vibration sensor. The vibration that is sensed in the present invention is physical or mechanical vibration, and it is not a vibration associated with a change in temperature. The vibration sensor may be of varying types. For example, the vibration sensor may be an acoustic sensor or an ultrasonic sensor.
Patent TW-415050-B (TW)
Title: Semiconductor chipset module and the manufacturing method of the same
Inventor: SHEN MING-DUNG
IPC: H01L21/98
Filed: 1999-04-16
Granted: 2000-12-11
Abstract: The invention is about the manufacturing method of the semiconductor chip apparatus that includes the procedures as follows. A semiconductor chip is provided, in which a bonding pad installation surface with several bonding pads are formed on the semiconductor chip. An isolation-tape layer with the first and the second sticking surface is provided. The first sticking surface of the isolation-tape layer is bonded with the bonding pad installation surface of the semiconductor chip. Several through holes used to expose the corresponding bonding pads are formed on the isolation tape layer according to the bonding pad of the semiconductor chip. A contact point placing space is formed in between each bonding pad and the hole-forming wall used to form the through hole for exposing the corresponding bonding pad. A conducting contact point is placed in every placing space of contact point. The circuit disposing surface, which has the disposed circuit pattern, of the print circuit board is bonded with the second bonding surface of the isolation tape layer. The conducting contact point is bonded with the corresponding circuit pattern of the circuit board, in which the sticking glue of the second bonding surface has a lower melting point than that of the conducting contact point. Therefore, the sticking glue has been melted and bonded with the circuit disposing surface of the print circuit board before the conducting contact point is melted and bonded with the predetermined circuit pattern of the print circuit board so as to seal the conducting contact point in the contact-point placing space.
Patent TW-431920-B (TW)
Title: Rotary guide bush
Inventor: HASEGAWA SHIGEO
IPC: B23B31/20
Filed: 1999-06-09
Granted: 2001-05-01
Abstract: A guide bush (10) includes a hollow cylindrical bar-support portion (14) surrounding a rotation axis (10a). The bar-support portion (14) includes three divided sections (22). In the inner surface (16) of the bar-support portion (14), generally cylindrical supporting members (26) are fixedly embedded, one for each, in the divided sections (22) in such a manner that a part (28) of each supporting member (26) projects from the inner surface (16). A recess (30) having a generally segmental sectional shape larger than a semicircle is formed in the inner surface part (17) of each divided section (22). Each supporting member (26) is received in each recess (30) in such a manner that the center axis (26a) thereof is oriented generally parallel to the rotation axis (10a). The projecting parts (28) of the supporting members (26) are closely and uniformly abutted at the top areas thereof to the outer surface of a bar supplied at the bar-support portion (14), and thereby supports the bar, rotating together with the guide bush (10), in a centering manner, so as to prevent the runout or deflection of the bar.
Patent TW-456053-B (TW)
Title: Active pixel sensor with bootstrap amplification
Inventor: MERRILL RICHARD B
IPC: H01L27/146
Filed: 1999-06-17
Granted: 2001-09-21
Abstract: In a first embodiment an active pixel sensor includes a photodiode for capturing photocharge, a reset transistor for resetting the photodiode to a reset potential, and a readout transistor, and in a second embodiment an active pixel sensor includes a photodiode for capturing photocharge, a reset transistor for resetting the photodiode to a reset potential, a transfer transistor for transferring captured photocharge, and a readout transistor. In both embodiments, the readout transistor has a drain that is coupled to a first supply voltage during integration of photocharge and a second supply voltage during readout of the photocharge. Accordingly, the sensitivity of an active pixel sensor is increased by increasing the fill factor, the noise an active pixel sensor is reduced by increasing the relative size of the readout transistor, and the gain is compressive as the relative light intensity in an active pixel sensor increases.
Patent TW-536654-B (TW)
Title: Liquid crystal display panel
Inventor: HORIE YOSHITAKA
IPC: G02F1/136
Filed: 1999-07-22
Granted: 2003-06-11
Abstract: A liquid crystal display panel is provided with a transparent substrate, a thin film transistor provided on the transparent substrate, and a pixel electrode provided on the transparent substrate. A scanning line connected to a gate of the thin film transistor is provided on the transparent substrate. A voltage which controls the thin film transistor is applied to the scanning line from an external circuit. An opposite electrode connected to a source of the thin film transistor is provided on the transparent substrate. A potential difference between the opposite electrode and the pixel electrode is a voltage applied to a liquid crystal. A common electrode line connected to a drain of the thin film transistor is provided on the transparent substrate. A voltage which controls the potential of the opposite electrode is applied to the common electrode line from the external circuit.
Patent TW-463333-B (TW)
Title: Manufacturing method of semiconductor device and semiconductor module
Inventor: HASHIMOTO NOBUAKI
IPC: H01L23/34
Filed: 1999-07-26
Granted: 2001-11-11
Abstract: The method of manufacturing a semiconductor device of the present invention comprises: a step of winding a tape carrier (10) having a plurality of transverse lines of bonding parts (14) on a reel (24), a step of providing anisotropic conductor film (30) at least on the bonding parts (14), a step of placing semiconductor elements (32) on the anisotropic conductor film (30) with their faces (36) having electrodes (34) down, a step of pressing the semiconductor elements (32) against the bonding parts (14) to connect the electrodes (34) with the bonding parts (14) electrically, a step of forming external electrodes (38) on the tape carrier (10), and punching the tape carrier (10) into individual semiconductor elements (32).
Patent TW-431078-B (TW)
Title: Device for position determination by means of radio waves
Inventor: LOEVSEN HAAKAN
IPC: G01S13/46
Filed: 1999-08-10
Granted: 2001-04-21
Abstract: A device for determining the position of a vehicle on a roadway by using radio waves which are emitted from the device and reflected by the vehicle and received by at least two array antennas (1, 2) arranged across the roadway, wherein the array antennas (1, 2) comprise a number of antenna elements (5-14), one of the antenna elements in the respective array antenna constituting the phase center (5, 10) of the array antennas, and wherein the antenna elements (5-14) of the array antennas are connected to one another such that the distance (d) between the phase centers (5, 10) of the array antennas (1, 2) included is smaller than half the width of an individual array antenna (1, 2).
Patent TW-439072-B (TW)
Title: Manufacturing method for resin film
Inventor: ECHIGO NORIYASU
IPC: B05B13/02
Filed: 1999-10-28
Granted: 2001-06-07
Abstract: Resin material in the liquid state is discharged in mist form toward a heated body by a two-liquid nozzle or resin material in the liquid state is mixed with gas and is discharged in mist form toward a heated body placed under reduced pressure, thereby allowing the resin material to adhere to the heated body and evaporate on the heated body. The evaporated resin material is allowed to adhere to the surface of a substrate so as to provide a thin resin film. Thereby, it is possible to provide thin resin films having a uniform thickness in a stable manner at low cost by using a simple means. Thin resin films thus provided can be widely used for conventional thin resin film applications, including magnetic recording mediums such as magnetic tapes, packaging materials, and electronic parts.
Patent TW-466488-B (TW)
Title: Semiconductor memory device
Inventor: TAKAHASHI KAZUNARI
IPC: G11C11/4097
Filed: 2000-02-01
Granted: 2001-12-01
Abstract: The topic of the present invention is to reduce the area of semiconductor memory device including a plurality of memories having different functions, and simplify the arrangement and process. The present invention relates to a cache memory including a first memory array and a main memory including a second memory array, which are integrated together on the same semiconductor substrate. Each memory cell in the first memory array is of a 2Tr1C type including: first transistor MTr1 and second transistor MTr2, the sources of which are connected together; and a data storage capacitor C, one of the two electrodes of which is connected to the common source of the first transistor MTr1 and second transistor MTr2. Each second memory cell in the second memory array is of a 1Tr1C type including a third transistor MTr; and a data storage capacitor C, one of the two electrodes of which is connected to the source of the third transistor MTr.
Patent TW-I225880-B (TW)
Title: Formazan compound and dyeing method using the compound
Inventor: UMEDA MARIKO
IPC: C09B50/06
Filed: 2000-02-03
Granted: 2005-01-01
Abstract: The present invention relates to a novel blue dye compound represented by formula (1) as shown below, which can dye a cellulose high molecular material without using dianisidine compound to provide the blue dyed product that has a high color value, a good build-up and various kinds of good fastness; a method for dyeing a cellulose high molecular material by using the same; and a cellulose high molecular material dyed with the same. The formazan compound is represented by the formula (1), in which R1 is hydrogen, sulfo, hydroxy, chloro, methoxy, carboxyl or alkyl; either of R2 and R3 is hydrogen and the other is sulfo; X is morpholino, 2-hydroxyethylamino or bis(2-hydroxyethyl) amino; and Y is formazan or its salt represented by formula (2) as shown below (In formula (2), R4 is sulfo or carboxyl).
Patent TW-534962-B (TW)
Title: Stud tensioning device for flange cover
Inventor: MALSBURY ALLEN S
IPC: F16J13/02
Filed: 2000-07-13
Granted: 2003-06-01
Abstract: A mechanism for selectively securing a cover to a flange of a pressure vessel. A plurality of such devices can be employed, using a plurality of studs that extend through matching openings in the flange and cover. A movable anchor plate or plates, also with holes through which each stud extends, is disposed adjacent to the flange or cover. The head of each stud will fit through its associated hole of the anchor plate (and into the opening of the closer one of the flange or cover) only if the anchor plate is properly oriented. When the anchor plate is so oriented, a piston head at the opposite end of the stud can be actuated away from the flange and cover to retract the stud head into the opening of the flange or cover. This protects the stud when the cover is disengaged from the flange. The stud can be biased in the opposite direction to permit the anchor plate to be reoriented into a position in which the stud head cannot pass through the anchor plate, so the stud can clamp the flange and cover together.
Patent TW-451276-B (TW)
Title: Semiconductor manufacturing methods
Inventor: CARPI ENIO L
IPC: G03F1/38
Filed: 2000-06-22
Granted: 2001-08-21
Abstract: A method is provided for determining a measure of corner rounding produced in a mask structure. The method includes providing an un-patterned mask structure having a transparent substrate, an opaque layer on the substrate and a photoresist on the opaque layer. A corner rounding test pattern is etched into the photoresist. The pattern exposes underlying portions of the opaque layer. The pattern is in the shape of a pair of intersecting perpendicular lines of the photoresist. The exposed portions of the opaque layer are brought into contact with a etch to remove the exposed portions of the opaque layer and to thereby expose underlying portions of the substrate. In one embodiment, the etch is a wet etch and undercuts the photoresist to remove unexposed portions of the opaque layer disposed adjacent to the exposed portions of the opaque layer. The photoresist is removed to produce mask structure. A defect is produced in the opaque layer of the mask structure, such defect being produced as a result of rounded corners, rather than square corners. The defect is formed in the opaque layer in region at the intersection of the pair of intersecting perpendicular lines of the photoresist. The defect is measured to provide an indication of the degree of corner rounding. With such method, standard measuring equipment, such as line width measuring equipment of defect detecting equipment can be used to determine the degree of corner rounding being produced in the semiconductor structure being formed concurrently with the test pattern.
Patent TW-550428-B (TW)
Title: Flat panel display device and manufacturing method thereof
Inventor: KANATSU TSUTOMU
IPC: H05K1/00
Filed: 2000-07-07
Granted: 2003-09-01
Abstract: In a flat panel display device, in which a display panel 1 loosely fitted on a main surface of a chassis 4 and circuit substrates held in hook portions provided on side surfaces of the chassis are connected each other through TCP's by bending the latter TCP's, and a method for manufacturing the same device, a main slit for a rounded portion of each TCP is formed in a rounded portion of the TCP and an auxiliary sub slit is also formed adjacent to the main slit. In order to reduce the peeling force exerted on connecting/fixing portions between the TCP's and the display panel, the circuit substrate is pulled up by bending the main and sub slits and then returning the sub slit to a flat state to insert the circuit substrate into the hook portions.
Patent TW-527336-B (TW)
Title: Process for preparing C5-/C6-olefins
Inventor: SCHWAB PETER
IPC: C07C11/06
Filed: 2000-07-11
Granted: 2003-04-11
Abstract: A process for preparing C5-/C6-olefins from an olefinic starting stream comprising C4-hydrocarbons comprises (a) carrying out a metathesis reaction in the presence of a metathesis catalyst comprising at least one compound of a metal of transition group VIb, VIIb or VIII of the periodic table of the elements so as to convert the 1-butene, 2-butene and isobutene present in the starting stream into a mixture of C2-C6-olefins and butanes, (b) firstly fractionating the resulting product stream by distillation to give a low boiler fraction A comprising C2-C4-olefins and butanes or C2-C3-olefins, which is discharged, and a high boiler fraction comprising C4-C6-olefins and butanes, (c) subsequently fractionating the high boiler fraction from (b) by distillation to give a low boiler fraction B comprising butenes and butanes, an intermediate boiler fraction C comprising pentene and methylbutene and a high boiler fraction D comprising hexene and methylpentene, (d) where all or part of the fractions B and/or C are recirculated to the process step (a) and the fraction D is discharged as product.
Patent TW-522312-B (TW)
Title: Computing system of artificial intelligence processing
Inventor: JENG YI-CHENG
IPC: G06F15/18
Filed: 2000-07-18
Granted: 2003-03-01
Abstract: The present invention relates to a computing system of artificial intelligence processing, which mainly comprises a cross-comparison module to cross-compare the codes at the front and rear ends, and which generates analyzing parameters, then alternatively replace the front and rears codes by the analyzing parameters sequentially, and cross-compare repetitively, so as to determine the relationship between the corresponding data at the front and rear end. The user selects/compares the output data, counts/records and modifies the corresponding analyzing parameters and experience parameters appropriately through a statistical analyzing module and experience parameter correction module, so as to provide a computing system of artificial intelligence processing having learning and correction capability.