baber/WOPTO huggingface dataset:
Patent JP-H04100217-A (JP)
Title: Semiconductor device
Inventor: NAKAI KENYA
IPC: H01L21/205
Filed: 1990-08-18
Abstract: PURPOSE:To suppress island-like growth in the initial stage so as to promote layery growth when a semiconductor crystal of germanium or germanium containing a less amount of silicon is grown by changing the germanium composition in the semiconductor crystal continuously or in step at least in the initial stage in the growing course of the crystal. CONSTITUTION:When a germanium crystal or silicon crystal containing a large amount of germanium is grown on a silicon substrate or a germanium crystal containing a large amount of silicon, an epitaxial layer containing germanium at a high concentration is grown by changing the germanium composition continuously or in step so that the boundary can become flat. The crystal thus formed constitutes a super lattice composed of several atomic layers and is less in the fault peculiar to the vapor growth. Moreover, island-like growth is prevented by setting the temperature at >=500 deg.C at which the growing speed of silicon (first crystal) is relatively high. Therefore, a super lattice layer can be manufactured highly efficiently.
Patent JP-H1167943-A (JP)
Title: Manufacture of semiconductor device
Inventor: IWAMOTO YASUHIKO
IPC: H01L27/06
Filed: 1997-08-12
Abstract: PROBLEM TO BE SOLVED: To provide a method of manufacturing a BiCMOS semiconductor device, which enhances the performance of a bipolar transistor, wihtout making additions to the number of masks and ensures stable characteristics of the transistor and the high yield of the transistor. SOLUTION: A gate structure is constituted into a three-layer structure, and a bipolar transistor incorporated in a process of manufacturing a MOS transistor, whereby after a gate oxidation, a base region is formed via this gate oxide film (thin oxide film) which is formed only by the gate oxidation. In short, a first polycrystalline silicon film 8 is formed on the entire surface of a semiconductor substrate 1, a scheduled bipolar transistor formation part only is selectively formed, and after this film 8 has been removed, a collector region 3 and the base region 5 are formed. Thereby, after the gate oxidation, the formation of the gate region 5 becomes possible via this gate oxide film (insulating film 6) only, and reduction in the surface concentration of the region 5 or an increase in the flying distance range of the projection of the region 5 due to ion-implantation is inhibited. As a result, enhancement of the performance of the bipolar transistor, stabilization of the characteristics of the bipolar transistor and high yield of the bipolar transistor can be contrived.
Patent JP-S59110963-A (JP)
Title: Method of manufacture valve body
Inventor: WATANABE YOSHINARI
IPC: B21D26/033
Filed: 1982-12-14
Abstract: PURPOSE:To increase safety, productivity and reliability of a valve body by expansion molding a flat portion of the body substantially circular centering around the axis of a stem, and fastening a metal fitting on the flat portion. CONSTITUTION:The flat portion 6 of a valve body 1 is formed substantially circular centering around the axis of a stem 5, and the stem or a metal fitting for retaining the stem is fastened on the flat portion 6. Thus, the wall thickness of the flat portion is increased, and as the flat portion is formed by expansion molding, the safety, reliability and productivity can be increased.
Patent JP-H1052034-A (JP)
Title: Switching power supply circuit
Inventor: OTAKE TETSUSHI
IPC: H02M3/155
Filed: 1996-07-31
Abstract: PROBLEM TO BE SOLVED: To reduce a minimum input voltage at starting a power supply in a switching power supply circuit, in which an input voltage as a driving voltage is fed for a control circuit at starting the power supply circuit, while a higher one selected from the input voltage and an output voltage is fed during the operation. SOLUTION: In a control circuit 3, collector and emitter terminals of a pnp bipolar transistor Q2 as a first reverse-current preventive means is connected between a power supply terminal Vcc and an input terminal 1. The base of the transistor Q2 is grounded through a resistor R3. A diode 4 is connected between the base of the transistor Q2 and the anode of a diode D3 as a second reverse-current preventive means in such a way that the anode terminals of diodes D3 and D4 are connected to each other.
Patent JP-H1046845-A (JP)
Title: Unit-bathroom wall inspection hole
Inventor: FURUHASHI KIYOSHI
IPC: E04F19/08
Filed: 1996-08-01
Abstract: PROBLEM TO BE SOLVED: To facilitate the exchange and repair of a faucet instrument and the maintenance and inspection of a piping by fixing the faucet instrument onto an inspection cover detachably installed to an inspection hole in a unit bathroom, etc., in which a wall surface is formed of tile panels. SOLUTION: A spout 5 is mounted on a wall panel formed by fixing a foundation bed 1 onto a framed frame and sticking tiles 2 on the foundation bed 1, an inspection hole 10 is formed to the upper section of the spout 5, and an inspection cover 11 being detachably connected and fastened to a sealing material at the opening edge of the inspection hole 10 and closing the inspection hole 10 is formed by sticking the tiles 2 on a stainless frame. The inspection hole 10 is opened, a thermal function section 3 and a cutoff function section 4 are set up to a piping on the wall-panel rear side, a thermo-handle 3' and a cutoff handle 4' are installed to the inspection cover 11 while being penetrated through through-holes formed to the inspection cover 11, and the inspection hole 10 is closed by the inspection cover 11.  Accordingly, the exchange and repair of a faucet instrument and the maintenance and inspection of the piping on the wall-panel rear side can be conducted easily by removing the inspection cover 11 from the wall panel.
Patent JP-H0767737-A (JP)
Title: Cabinet with trays
Inventor: HAYAKAWA SHUNROKU
IPC: A47B88/00
Filed: 1993-09-02
Abstract: PURPOSE:To enable the installation of guide rails inside a cabinet body made of steel to support trays in a manner that they are slidable back and forth whereby the installation work is simplified to allow a plural number of trays to be fitted at the same time, thus largely contributing to the reduction of labor and man-hour required for the assembly work and therefore to the manufacturing cost reduction. CONSTITUTION:A pair of connecting grooved rails 4, 5 are formed opposed to each other at locations in front and in the rear on the inner surfaces of two lateral boards 3 of a cabinet body 1. Both side edges 8 of guide boards 7 made of synthetic resin, to the inner sides of which a plural number of protruding guide rails are monolithically formed in a multi-stage shape, are slided into a pair of butt coupling rails. A plural number of trays 2 are installed between the two guide boards in a way that the trays are supported by the guide rails and are made drawable.
Patent JP-S6278714-A (JP)
Title: Magnetic storage
Inventor: NAKAGAWA TETSUO
IPC: C10N30/06
Filed: 1985-10-01
Abstract: PURPOSE:To improve the corrosion resistance of a protecting film as well as the coefficient of friction to a head by forming a thin film made of the oxide, nitride, carbide or carbon on a metallic magnetic thin film medium formed on a substrate and furthermore covering the thin film with a kind of the charge transfer complex. CONSTITUTION:A thin film is formed on a metallic magnetic thin film with use of the oxide, nitride, carbide or carbon that has the excellent corrosion resistance and a low coefficient of friction. However this thin film produces a film defect. In this respect, a charge transfer complex which permeates into said film defect is used to cover the entire surface of a magnetic memory medium including the metallic magnetic thin film. Thus a complex is formed. As a result, the metallic thin film medium is protected from the moisture, etc., that causes corrosion. Furthermore the charge transfer complex has the extremely high plastic and fluid deforming properties and therefore reduces greatly the friction between the magnetic storage and a head. This improves remarkably the mechanical reliability of the magnetic memory medium.
Patent JP-H0774223-A (JP)
Title: Semiconductor manufacturing apparatus and stress measuring method
Inventor: OTA HIROYUKI
IPC: B81B3/00
Filed: 1993-09-02
Abstract: PURPOSE:To measure a stress at high speed and in a small occupied area by a method wherein a very small cantilever beam is installed in a semiconductor manufacturing apparatus, a beam is shone to form a film and the stress of the film is found on the basis of the distortion of the cantilever beam. CONSTITUTION:Very small cantilever beams are installed in a semiconductor manufacturing apparatus. Then, a beam 13 is scanned in such a way that a thin film is deposited on one cantilever beam 8 out of the cantilever beams 8. Since the cantilever beams 8 is elastically deformed due to the stress of the deposited thin film, an elastic deformation amount is measured on the basis of a change in the electrostatic capacitance of an electrode 6. The stress of the thin film is found in a stress computation part 10 by taking into consideration the film thickness of the thin film as well as the size and the rigidity of the cantilever beam 8. Thereby, since it is sufficient to scan the beam 13 on the very small cantilever beam 8, it can be scanned at high speed. In addition, since the cantilever beam 8 is very small and its occupied area is small, the stress can be measured without making a chamber large.
Patent JP-S6199933-A (JP)
Title: Production of magnetic disk
Inventor: HONDA YOSHINORI
IPC: G11B5/72
Filed: 1984-10-19
Abstract: PURPOSE:To improve the adhesive strength between a magnetic layer and protective film layer and to obtain a magnetic disk having high sliding resistance by depositing directly a blank material for the protective film on a magnetite layer and subjecting simultaneously these layers to a heat treatment. CONSTITUTION:The adhesive strength between the magnetic layer and the protective film layer is small and the sliding resistance is poor if the protective film is formed on the magnetic layer and therefore the protective film layer is formed prior to the formation of the magnetic layer and the magnetite layer and the protective film layer are simultaneously subjected to the heat treatment, by which the high adhesive strength is provided to the protective film layer and such protective film layer is formed by baking onto the magnetic layer. More specifically, an aluminum alloy substrate 1 is treated by an anodization method to form an alumite layer 2 and after polishing and washing, the magnetite layer 3 is formed by sputtering. A secure reaction layer is formed at the boundary between the magnetic layer and the protective film layer by the chemical reaction of the magnetite layer with the protective film layer when the magnetite layer is changed by the heat treatment to the magnetic layer. The adhesive strength and sliding resistance are thus remarkably improved.
Patent JP-S6278805-A (JP)
Title: Soft magnetic thin film
Inventor: HAYASHI KAZUHIKO
IPC: G11B5/127
Filed: 1985-10-01
Abstract: PURPOSE:To make the saturated magnetic flux density of the titled soft magnetic thin film higher than that of the Sendust alloy without changing soft magnetic characteristics and the like by a method wherein Fe, Co, Ga and Si are selected as the constituent elements of the soft magnetic thin film, and the compositional ratio of said elements is set within the prescribed range. CONSTITUTION:In order to increase the density of saturated magnetic flux, the composition of the titled soft magnetic thin film is set as FexCoyGaaSib (the compositional ratio of x, y, a and b is indicated by atomic %) taking into consideration of the fact that the point of intersection of the line of magnetostriction lambdas=0 with the line of crystal magnetic anisotropy K=0 is to be set closer to the side of Fe high density, and that the rate of reduction of magnetic moment in absolute zero and the addition of Co improves the density of saturated magnetic flux, the corrosion resistance and the abrasion resistance of the soft magnetic thin film. In this compositional ratio, when the adding quantity of Co is too much, the density of saturated magnetic flux and soft magnetic characteristics are deteriorated in inverse proportion to the corrosion resistance and the abrasion resistance. Therefore, the compositional ratio of the material used is set as follows: 65<=x+y<=85.0<=y<=20.1<=a<=35.1<=b<=35, x+y+a+b=100.
Patent JP-H0769913-A (JP)
Title: Production of substance having aids-curing effect
Inventor: NANBA HIROAKI
IPC: A61P31/18
Filed: 1993-09-02
Abstract: PURPOSE:To obtain a substance capable of restoring the immunizing potency of HIV-positive patients, thus also capable of mitigating AIDS-related symptoms involved with HIV infection. CONSTITUTION:This substance having AIDS-curing effect can be obtained by the following method: the fruit body or cultured mycelia of Grifola frondosa is dried, and then ground into powder or extracted with hot water. In the case of powder, the substance is orally administered at a daily does of 1-10g; for an extract (in the form of a liquid), the extract itself is orally administered, or the polysaccharide therein is orally administered as extract or may be parenterally administered through injection.
Patent JP-H1147242-A (JP)
Title: Disinfection apparatus for packaging material and disinfection method thereof
Inventor: YAMAMOTO SHIKI
IPC: A61L2/18
Filed: 1997-07-31
Abstract: PROBLEM TO BE SOLVED: To re-use a disinfectant by a method wherein an exhaust sampling port is provided at a part of an exhaust pipe and a disinfectant vaporizing part is connected to the exhaust sampling port by a recycling device for the disinfectant to supply a part of the mist-like disinfectant in an exhaust to the disinfectant vaporizing part. SOLUTION: In this disinfection apparatus, an exhaust 7 containing a hydrogen peroxide mist is sampled into the conventional disinfection apparatus comprising a disinfectant supply part using a 2 fluid spray device 10 and a disinfectant vaporizing part 3 to heat hydrogen peroxide above a boiling point from an exhaust pipe 21 and to supply the exhaust 7 to a vaporization chamber 18 of the disinfectant vaporizing part 2, a disinfectant recycling device 4 comprising an exhaust sampling port 22, an exhaust supply pipe 23, a heater 24 and a blower 25 allow re-using of the hydrogen peroxide in the exhaust.
Patent JP-S6460391-A (JP)
Title: Production of gamma-halo-beta(r)-hydroxybutyric acid ester
Inventor: HASEGAWA MASAYASU
IPC: C12P7/62
Filed: 1987-08-31
Abstract: PURPOSE:To obtain the titled compound useful as an intermediate for pharmaceuticals such as carnitine or GABOB, in high efficiency, by reducing a gamma-haloacetoacetic acid ester with an enzyme extracted from bakers' yeast and having a specific molecular weight. CONSTITUTION:The enzyme used in the present process has the following properties: mol.wt., 55,000-68,000; optimum pH, 5.5; stable pH range, 6.5-8.0; optimum temperature, 30 deg.C; isoelectric point, pH 5.1; inhibition, inhibited by Cu, Hg, etc.; etc. A proper amount of the enzyme is added to water or a buffer solution of pH 4-8 containing 0.1-10% of a gamma-haloacetoacetic acid ester and is made to react at 15-40 deg.C for 1min-50hr under agitation. The objective gamma-halo-beta(R)- hydroxybutyric acid ester is produced from the obtained reaction product e.g. by solvent extraction.
Patent JP-H0751707-A (JP)
Title: Cold rolling method for steel tube
Inventor: UEZONO TATSUHIKO
IPC: B21B27/02
Filed: 1993-08-10
Abstract: PURPOSE:To prevent the generation of surface flaw without impairing reducing rolling at a high draw ratio of outer diameter. CONSTITUTION:In a manufacture of a steel tube having a highly precise dimension of outer diameter by cold reduce-rolling the steel tube in a three roll reducer, cold reducing rolling is executed with a roll caliber in which the ratio of tangent relief length L0 from the circular arc plotted with the rolls 1, 2, 3 to the caliber circumferential length L of one roll is made 5 to 20% in each roll flange corner part. Therefore, the preparing time can be reduced, and the yield and the operation rate can be improved.
Patent JP-S6462760-A (JP)
Title: Electronic apparatus
Inventor: SUETSUGU MAKOTO
IPC: A63F13/42
Filed: 1987-09-03
Abstract: PURPOSE:To positively utilize an unnecessary time zone until the processing becomes possible after a power source is turned on, and to contrive to dissolve a user's dissatisfaction, by displaying the fortune by utilizing the generation of a random number. CONSTITUTION:When a power source is turned on, a signal is generated by a power source turn-on signal generating means A, and when this signal is received, a random number is generated by a random number generating means B. Subsequently, based on this generated random number, the fortune which is stored in advance by a fortune determining means C, for instance, best luck, medium luck, ... worst luck, etc., are determined. Subsequently, this determined fortune is displayed by a display means D. In such a way, a user is released from such a dissatisfaction as he spends idly a dull time in the initialization time.
Patent JP-H0963968-A (JP)
Title: P-type silicon carbide semiconductor layer and manufacture thereof
Inventor: MIYAJIMA TAKESHI
IPC: H01L21/205
Filed: 1995-08-28
Abstract: PROBLEM TO BE SOLVED: To make high a carrier concentration and a carrier activation rate in a silicon carbide semiconductor layer doped with boron. SOLUTION: Gas containing carbon and silicon is passed and at the same time, gas containing boron is passed, whereby when a p-type silicon carbide semiconductor layer 3 is vapor-grown on an n-silicon carbide semiconductor layer 2, a relation of 1<Qc /Qsi <5 is satisfied between the feed rate Qc of the carbon, which contributes to a crystal growth, and the feed rate Qsi of the silicon, which contributes to the crystal growth. In the formed layer 3, there is a relation of 1<dc /dsi <=32/31 between the atom density dc of the carbon, which is a component element, and the atom density dsi of the silicon, which is a component element, and the carrier concentration and carrier activation rate in the layer 3 respectively become a high carrier concentration having a shallow acceptor level and a high carrier activation rate.
Patent JP-H01164729-A (JP)
Title: Production of superconducting material
Inventor: MATSUMURA TERUICHIRO
IPC: C23C14/08
Filed: 1988-09-01
Abstract: PURPOSE:To obtain a superconducting material having high uniformity easily by allowing a stream of mist of a soln. of a compd. contg. a specified element, Ba, and Cu to contact with a heated fibrous or tape-shaped base material. CONSTITUTION:A superconducting material expressed by the formula (wherein alphais Y, Nd, Sm, Eu, Gd, Dy, Ho, Er, Tm, Yb, and Lu; 0<x<1; 0<=y<2; 0.5<=z<=3) by the process described hereunder. A stream of mist of a soln. of a compd. contg. the element alpha, Ba, and Cu is allowed to contact with a heated fibrous or tape-shaped base material from a direction orthogonal to the longitudinal directtion of the base material, forming thus a film shaped superconducting material on said base material. In the general CVD process, the starting material is usually flowed along the longitudinal direction of the base material when the base material is a fibrous or a tape-shaped material, but the uniformity of a superconducting material is improved by allowing the mist stream of the starting material to contact with the base material from an orthogonal direction to the longitudinal direction of the base material when the starting material is fed to a reaction system in the form of mist stream.
Patent JP-S6374554-A (JP)
Title: Informing device for interlocking operative condition
Inventor: ORII TAKESHI
IPC: B23Q17/00
Filed: 1986-09-19
Abstract: PURPOSE:To inform the condition to be placed in an interlocking operative condition when the condition is in no normal operation, by constituting a device such that after the condition is placed in the interlocking operative condition, an informing sound is generated till the initial action instruction is input and when no action instruction is input within a predetermined period in the interlocking operative condition. CONSTITUTION:During interlocking operation, the next action instruction is not input, and if an action instruction switch LS1 is continued being left as placed in an off-condition, a device, maintaining the first contact x2-1 of an acting relay X2 to be also placed in an off-condition, advances time counting of the second timer T2 being not cleared. And the device, after the predetermined time T2, turns on a delay contact t2 of the timer T2 actuating a buzzer BZ. While the device, if the switch LS1 is continued being left as in an on- condition, maintains a delay contact t1-1 of the first timer T1, being not cleared, to be also in an on-condition while the first contact x2-1 of the relay X2 to be in an on-condition. Accordingly, electrification of the timer T2 is continued, and the device, after the predetermined time T2, turns on the delay contact t2 of the timer T2 actuating the buzzer BZ.
Patent JP-S6376449-A (JP)
Title: Wafer carrier jig
Inventor: TAKAHASHI TSUTOMU
IPC: B65D85/86
Filed: 1986-09-19
Abstract: PURPOSE:To improve the efficiency and workability in conveyance, housing and storage of wafers in treatment devices having different number of wafers to be treated as well as to prevent the contamination of the wafers by a method wherein the title wafer carrier jig is composed of the main carrier, in which two wafer housing grooves are provided on the inner circumferential wall of an aperture part, and an auxiliary carrier wherein a wafer housing groove is provided on the inner circumferential wall of a recessed part. CONSTITUTION:The title wafer carrier jig is composed of the main carrier 2, on which an aperture part 2A and two wafer housing grooves 5a and 5b are provided on the inner circumferential wall of the aperture part 2A, and the upper and the lower auxiliary carriers 1 and 3 provided with recessed parts 1A and 3A. Both auxiliary carriers 1 and 3 and the main carrier 2 can be superposed with one another. For example, the main carrier 2 is superposed in an arbitrary manner, and the upper and the lower auxiliary carriers 1 and 3 are superposed on the upper and the lower sides. As a result, the conveying and processing unit of the wafers can be set freely, the wafer located inside the carrier can be prevented from contamination by the dust in the working atmosphere, and the efficiency of housing, the workability and the yield of production can also be improved.
Patent JP-S60112272-A (JP)
Inventor: MIYAZONO SETSU
IPC: H01R12/32
Filed: 1983-11-24
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。
Patent JP-2000051912-A (JP)
Title: Roll for hot-rolling
Inventor: ODA NOZOMI
IPC: B21B27/00
Filed: 1998-08-03
Abstract: PROBLEM TO BE SOLVED: To provide a roll for hot-rolling excellent in resistance to surface roughening the wear resistance of a high-speed steel alloy of which is secured and also pit-like flaws on the roll surface of which are reduced. SOLUTION: The outer shell layer of the roll consists of the highspeed steel alloy and, in the structure, MC-base carbides whose grain size is >=4 μm is dispersed at an area rate of 7-15% and eutectic carbides (M2C-base, M6C-base, M7C3-base, M23C6-base carbides, etc.) other than the MC-base carbides 2 is dispersed at the total area rate of <=15%. There are eutectic parts 3 which is composed of the eutectic carbides (M2C-base, M6C-base, M7C3-base, M23C6-base carbides, etc.) other than the MC-base carbides 2 and the base materials which are simultaneously crystallized together with these eutectic carbides and it is preferable that these eutectic parts 3 are not present as coarse one having an area of >=10000 μm2.