baber/WOPTO huggingface dataset:
Patent TW-555537-B (TW)
Title: Fastening device and body decoration using the fastening device
Inventor: TANISEI TAKAYUKI
IPC: A44C11/02
Filed: 2000-04-27
Granted: 2003-10-01
Abstract: The present invention provides a fastening device and a body decoration using the fastening device. The fastening device is not easy to undergo plastic deformation at the force receiving part due a repetitive application of external forces thereon, and is not easy to detach during use. The fastening device 1 comprises three (plural) balls 2a positioned in a ring configuration; a holder 3 formed by an elastic body maintaining the balls at a specified location. A body decoration can be inserted into a through hole 3a defined by the holder 3 so that the balls 2a move along an expanding direction and pressing against the holder 3. The elastic restoration force of the holder 3 holds the body decoration. Even after a repetitive use over a long period of time, the elastic force of the holder 3 can still be maintained, such that the fastening device has a high support function and an excellent durability.
Patent TW-448262-B (TW)
Title: Lockable cap
Inventor: SUGIMOTO NAOYUKI
IPC: E05B17/14
Filed: 2000-07-24
Granted: 2001-08-01
Abstract: A lockable cap of this invention is water-proof, thin, and low-cost. The lockable cap comprises a base member 11 provided with a hole 12 for receiving a lock operating member, a lip 15 rotatably mounted with respect to the base member 11 for opening and closing the hole 12, a resilient member K for urging the lid 15 in the opening direction, a latch member 19 for keeping the lid 15 in the position while lid 15 is pushed back against the spring force of the resilient member K to the position of closing the hole 12, a lock device 26 provided on the base member 11 in the vicinity of the latch member 19, and a latch locking member 34 provided in the lock device 26 and operable by inserting a matching key for unlocking the locking of lid 15.
Patent TW-433988-B (TW)
Title: Italian noodle product capable of increasing the viscosity of noodle sauce
Inventor: LI KUEN-HUNG
IPC: A23P1/00
Filed: 2000-08-04
Granted: 2001-05-16
Abstract: The present invention relates to a process for producing an Italian noodle, which comprises mixing a Dulan salas powder or a Dulan fine powder, salt, a quality improver and water into a mixture; after thorough mixing, heating the mixture in a biaxial extruder with a specific temperature range, retention time and mold pressure; drying and/or cooling the extrusion to a final moisture content as desired. It is characterized in controlling the water-boiling starch dissolution amount of the Italian noodle product to 8 to 15 dry basis weight% so that the Italian noodle product after cooking shows a rough surface and thereby increasing the viscosity to the sauce while increasing the taste of a commercial Italian noodle.
Patent TW-519766-B (TW)
Title: Method for fabricating thin film transistor or liquid crystal display
Inventor: CHEN SHIN-MING
IPC: G02F1/133
Filed: 2000-09-01
Granted: 2003-02-01
Abstract: There is provided a method for fabricating thin film transistor liquid crystal display with merely four photolithographic steps. The first photolithographic step is used to form a gate and a bottom electrode of an capacitor. After blanket depositing a dielectric layer, an amorphous silicon layer and a doped amorphous silicon layer over the substrate sequentially, the second photolithographic step is used to etch the amorphous silicon layer and the doped amorphous silicon layer and the dielectric layer to a certain thickness except the portion above and around the gate electrode. Next, a pixel layer and a S/D metal layer are sequentially deposited over the substrate. The third photolithographic step is used to remove a portion of the pixel layer, the S/D metal layer and the amorphous silicon layer and the doped amorphous silicon layer above the gate electrode to form a trench. Afterwards, a passivation layer is deposited, then a fourth photolithographic step is used to define the position of the pixel by removing a portion of the passivation layer. The remained passivation layer is used as a mask to remove the S/D metal layer, in order to form the pixel.
Patent TW-522619-B (TW)
Title: Excimer laser apparatus
Inventor: SEKIGUCHI SHINICHI
IPC: F16C39/06
Filed: 2000-10-04
Granted: 2003-03-01
Abstract: An excimer laser apparatus comprises a container sealing a laser gas including a halogen gas therein, a pair of discharge electrodes disposed in the container for inducing an electric discharge capable of oscillating a laser light, and a circulating fan with a shaft for producing a high-speed laser gas stream between a pair of the discharge electrodes. Both ends of the shaft are rotatably supported by rotor-stator mechanisms, or one end of the shaft is rotatably supported by a rotor-stator mechanism, and the other end of the shaft is supported by a magnetic bearing. The rotor-stator mechanism comprises a rotor attached to the shaft of the circulating fan, a stator provided at a position opposed to the rotor, an electric motor winding provided in the stator for applying torque to the rotor, and a position control winding provided in the stator for producing a magnetic force to levitate and support the rotor.
Patent TW-442702-B (TW)
Title: Common opto-mechanical structure compatible with plural lenses having different characteristics
Inventor: HUANG WEI-BANG
IPC: G03B35/00
Filed: 2000-10-12
Granted: 2001-06-23
Abstract: The present invention relates to a common opto-mechanical structure compatible with plural lenses having different characteristics, which comprises the first lens group, the first lens seat, two pulling-extension springs, the second lens group, lens barrel, switching device for nearby photographing, bush for fine-adjustment of focal length, lens seat and diaphragm shutter mechanism unit, etc. By matching with different combinations to be used in lens shutter of CCD type, focal plane shutter or CMOS type lens structure, it has many features such as that the development cost of repeatedly die casting can be reduced, the competiveness in the market can be enhanced, and the developing time of opening mold for the camera lens module can be shortened.
Patent TW-488141-B (TW)
Title: A contact type image sensor and a hand scanner provided with the same
Inventor: YANO AKIHIRO
IPC: H04N1/028
Filed: 2000-11-10
Granted: 2002-05-21
Abstract: The present invention relates to a contact type image sensor which scans images drawn on an object to be read and a hand scanner provided with the sensor. This contact type image sensor comprises an ITO film (37) (a transparent electrode film), which is transparent to light and electrically conductive; an aluminum layer (38, 38a) (a metal electrode film), which lowers the electric resistance of the conductive layer formed on the FAP (33) and which blocks the light; a bonding layer (39), which bonds the ITO film (37) and the aluminum layer (38, 38a) to the sensor substrate (32), and which is transparent to the light, are provided between the sensor substrate (32) and the FAP (33). The ITO film (37) is formed so as to cover the entire bonding surface of the FAP (33),and the aluminum layer (38, 38a) comprises a light penetration window (40) through which light can penetrate, which is located in an area of the aluminum layer (38, 38a), including at least the region facing the pixels (34).
Patent TW-I283270-B (TW)
Title: Attenuated rotavirus populations, rotavirus, rotavirus variants and reassortants, a method of producing the rotavirus population and a vaccine comprising them
Inventor: COLAU BRIGITTE DESIREE ALBERTE
IPC: C12N/
Filed: 2000-11-20
Granted: 2007-07-01
Abstract: The invention provides an attenuated rotavirus population comprising a single variant or substantially a single variant which is defined by a nucleotide sequence encoding at least one of the major viral proteins designated as VP4 and VP7. The invention particularly provides a rotavirus population designated as P43. The invention further provides a novel formulation for a rotavirus vaccine which is in the form of a quick dissolving tablet for immediate dissolution when placed on the tongue.
Patent TW-509863-B (TW)
Title: Multimedia data stream boosting method and streaming booster
Inventor: FAN JOE
IPC: G06F12/00
Filed: 2000-11-22
Granted: 2002-11-11
Abstract: A multimedia data stream boosting method and streaming booster installs a booster in between server and storage device to have acquisition, detection and allocation in memory of the booster regarding data in storage device in advance. When server receives a request from client end, server immediately builds up a channel for the client and proceeds the read of each data block with respect to storage device from the entry point of the channel through the booster, speeding up the data read time, lowering the mechanical delay of storage device and attaining real-time functionality.
Patent TW-474056-B (TW)
Title: Optical semiconductor module
Inventor: YOSHIMURA MANABU
IPC: H01S5/022
Filed: 2000-12-11
Granted: 2002-01-21
Abstract: The purpose of the present invention is to provide a small-sized optical semiconductor module. An optical semiconductor module (10) comprises a mount (20), a first member (30), an optical semiconductor device (22), a second member (34) and an optical fiber (40). The mount (20) extends along a reference plane perpendicular to an axis (12). The first member (30) comprises a tubular portion (30a) extending along the axis (12), a first end (30b) provided on one end of the tubular portion (30a) and fixed to the mount, and a second end (30c) provided on the other end of the tubular portion (30a). The optical semiconductor device (22) is arranged in the tubular portion (30a) of the first member (30) so that the optical axis of the device may align with the axis (12). The second member (34) has a tubular portion (34a) extending along the axis (12) and fixed to the second end (30c) of the first member (20). The optical fiber (40) extends in the tubular section (34a) of the second member (34) and coupled optically to the optical semiconductor device (22).
Patent TW-480299-B (TW)
Title: Method of knitting neck portion of knit wear by weft knitting machine and the knit wear
Inventor: OKAMOTO KAZUYOSHI
IPC: D04B1/24
Filed: 2001-01-17
Granted: 2002-03-21
Abstract: A method of knitting the neck portion of a knit wear such as a seamless-knitted sweater, comprising the step of knitting a neck portion (10) formed at a main front part (2a) of a sleeved knit wear (1) by branching the main front part to a right side front (15a) and left side front (5a), forming an increase along the peripheral edge of the front neck portion (10a) in the process of knitting the main front part, moving both knitted loops at the main front part in the direction apart from the neck portion (10a), removing the knitted loops in the peripheral edge area of the neck portion (10a) in order from the knitting to bring them in the status of being not activated, repeatedly by specified times, so as to increase the width of the neck portion (10a) and the step of feeding a front side portion with knitted loops increased during the formation of the neck portion in order from the knitter loop at the outer end of the front part to a second needle floor, and maintaining the balance of the longitudinal knitting width of the tubular body.
Patent TW-477020-B (TW)
Title: Cleaning apparatus and method for processing chamber
Inventor: HUANG JIUN-JIE
IPC: H01L21/66
Filed: 2001-01-19
Granted: 2002-02-21
Abstract: The present invention provides a cleaning apparatus and method for processing chamber, which comprises a processing chamber for the manufacturing reaction of the wafer; a crystal sensor configured inside the processing chamber to detect the residual film depth in the processing chamber; a signal controller for transmitting the film depth detected by the crystal sensor in signal type to the processor for being processed. If the detected film depth by the processor is too large, the cleaning gas is outputted. The residual film inside the processing chamber is removed until the film is completely removed or the depth thereof is reduced to an acceptable range.
Patent TW-560084-B (TW)
Title: Method to manufacture an optical transparent substrate and method to manufacture light-emitting semiconductor chips
Inventor: STREUBEL KLAUS DR
IPC: H01L21/20
Filed: 2001-02-23
Granted: 2003-11-01
Abstract: Method to manufacture a light emitting semiconductor chip, wherein an epitaxially produced light-emitting semiconductor structure (4) is applied on a transparent substrate (3). Firstly on a lattice matching substrate (1) epitaxically grows a substrate layer (2). The substrate layer (2) is connected with the transparent substrate (3) by means of wafer-bonding on its side facing away from the lattice matching substrate (1). Afterwards the lattice matching substrate (1) is removed from the combined structure composed of the substrate layer (2) and the transparent substrate (3). On the naked side of the substrate-layer (2) epitaxially grows a light-emitting semiconductor structure (4). The method is especially suitable to manufacture light-emitting-diode chips containing light-emitting diode structure, for which no optical transparent lattice matching substrate material is provided for used.
Patent TW-497120-B (TW)
Title: Transistor, semiconductor device and manufacturing method of semiconductor device
Inventor: NISHIYAMA AKIRA
IPC: H01L29/04
Filed: 2001-03-05
Granted: 2002-08-01
Abstract: There is provided a semiconductor device having low channel resistance without degrading transistor characteristics even for 0.1 μm generation or later, and also a manufacturing method of the device. A technique is also provided for fabricating the intended source/drain electrodes and gate electrode without the use of selective metal growth methods. After forming the gate electrode, a semiconductor film is temporarily formed selectively in source/drain regions. A dielectric film is deposited on the substrate and then, the surface is etched by chemical/mechanical polish (CMP) techniques to the extent that the semiconductor film is exposed on the surface. At this time the semiconductor film is partly etched until its midway portion along the thickness is removed away. Thereafter, a desired metal or silicide is deposited on the entire surface. Next, CMP etching is carried out, thus forming electrodes while letting them reside on or over the source/drain semiconductor layers and a gate insulation layer.
Patent TW-480820-B (TW)
Title: Charge/discharge circuit enabling fast reaction for energy storage device
Inventor: FANG YUAN-RUEI
IPC: H02J7/00
Filed: 2001-03-30
Granted: 2002-03-21
Abstract: The present invention relates to a charge/discharge circuit, in particular, a charge/discharge circuit enabling faster reaction for an energy storage device. The circuit includes a PNP transistor whose on/off state is controlled by a diode; an NPN transistor placed in the discharge circuit and whose on/off state is controlled by at least one photodiode; and a capacitor placed between the photodiode and the NPN transistor. During the charging process, the charging current conducts through the diode and causes the transistors to turn-off to reduce the leakage and to achieve faster charging. At the same time, the photodiode activated by the illuminating light source causes the capacitor to accumulate a certain amount of negative charges to produce a negative potential. Therefore, the discharging current influenced by the negative potential of the capacitor conducts through the discharge circuit more readily than being influenced by the grounded zero potential during the discharging process and fast discharging is achieved.
Patent TW-515183-B (TW)
Title: Networking device with automatic polarity coupling and method there for
Inventor: SHIH KO-YAN
IPC: H04L1/24
Filed: 2001-06-29
Granted: 2002-12-21
Abstract: The invention discloses a networking device with automatic polarity placement and method there for used to transmit network message, the network device can be switch or hub and it comprises multiple layer random number generators used to generate multiple random numbers, multiple ports used to link to multiple network lines respectively and each port contains signal detector used to detect if the corresponding connected network line has signal, such as normal link pulse or fast link pulse, and polarity coupler coupled with the signal detector and the random number generator used to respond to the signal detector for selectively change the connection polarity of port in accordance with one of the multiple random numbers generated by the random number generators while detecting no signal on the corresponding network line. The signal detector further includes a status counter used to determine the connection polarity of network line at the first timing and the first timing is better as 62 millisecond and the second timing is better as 1.8 second. The network device can simultaneously support 10Base-T, 100Base-T, 1000Base-T and automatic coordination functions.
Patent TW-509652-B (TW)
Title: Conveyor belt impact cradle with adjustable wing members
Inventor: BURKHART JAMES R
IPC: B65G21/20
Filed: 2001-07-03
Granted: 2002-11-11
Abstract: An impact cradle for supporting a moving conveyor belt. The impact cradle includes a plurality of support structures. Each support structure includes an elongate support member and first and second wing cushion support members for supporting impact bars. Each wing cushion support member includes a first end including a plurality of apertures and a second end including a plurality of apertures. Each aperture in the first end of a wing cushion support member is spaced apart a uniform distance from a counterpart aperture in the second end of the wing cushion support member. A first fastener and a second fastener are inserted respectively through a selected pair of counterpart apertures to connect the first and second ends of the wing cushion support member to the support member. Each pair of counterpart apertures is adapted to dispose the wing cushion support member at a selected inclined angle with respect to the support member to conform to the inclined edges of the conveyor belt. An adjustment member is disposed between the first end of each wing cushion support member and the support member to provide a selective incremental increase or decrease in the inclined angle of the wing cushion support member.
Patent TW-I243170-B (TW)
Title: Perfluoroalkyl-containing complexes with sugar radicals, process for their production and their use
Inventor: PLATZEK JOHANNES
IPC: A61K31/555
Filed: 2001-08-10
Granted: 2005-11-11
Abstract: Perfluoroalkyl-containing complexes with sugar radicals of general formula I, in which R represents a monosaccharide or oligosaccharide radical that is bonded via the 1-OH position or 1-SH position, Rf means a perfluorinated carbon chain, K is a metal complex, and Y and Z represent linker groups, are suitable for intravenous lymphography, for tumor diagnosis and for infarction and necrosis imaging.
Patent TW-I231352-B (TW)
Title: Method and device for characterizing or controlling zones of temporal fluctuations of a scene
Inventor: DUGUE JACQUES
IPC: G06T7/00
Filed: 2001-09-21
Granted: 2005-04-21
Abstract: The invention relates to a method of processing images of at least one flame or of a scene in a furnace, characterized in that it comprises at least one sliding statistical processing of the images of the flame which are captured in the course of a sliding time interval, so as to eliminate the fast fluctuations therefrom.
Patent TW-523923-B (TW)
Title: Metal oxide semiconductor image sensing device having structure for avoid generation of leakage current
Inventor: CHAN CHIEN-LING
IPC: H01L27/14
Filed: 2001-10-11
Granted: 2003-03-11
Abstract: A kind of metal oxide semiconductor (MOS) image sensing-device is provided in the present invention. In the invention, the MOS structure is improved such that the source of MOS is not easily affected by the gate processing to generate junction leakage. The structure is primarily featured with burying the source under the field oxide layer. One side of the source contacts part of gate oxide layer, and the other side contacts the light sensing diode.
Patent TW-499660-B (TW)
Title: Electronic device for learning characters and the method thereof
Inventor: CHEN HUAI-YAN
IPC: G09B5/04
Filed: 2001-10-12
Granted: 2002-08-21
Abstract: The present invention is an electronic device for learning characters and the method thereof, wherein the electronic device is configured with a hand-writing display. When the user is writing characters thereon for learning, the CPU in the electronic device will read a pre-stored writing demonstration program from a memory, and show the writing example for the character on the hand-writing display sequentially. Thus, the user can use a hand-writing pen to practice writing on the hand-writing display according to the illustrated writing method. After the CPU reads the character written by the user, it will recognize the character form, and determining if the character is written successfully. If the writing is failed, the writing example will be re-displayed for the user to re-practice writing the character. If the repetition of displaying reaches a certain number of times, the unfamiliar character will be skipped, and it will display the writing example of next character, so as to prevent the user from frustrating by repeated failures. If the writing is successful, the writing example of the next character will be displayed, and the user can learn more characters.
Patent TW-527630-B (TW)
Title: Semiconductor device
Inventor: KOBAYASHI MOTOSHIGE
IPC: H01L29/739
Filed: 2001-11-16
Granted: 2003-04-11
Abstract: The subject of the present invention is to suppress the increase of leakage current for the PT-IGBT. The solving means is described in the following. An n<+>-type buffer layer 8, which satisfies d2/d1 > 1.5, and the p<+>-type collector layer 9 are formed. The value of d1 is a depth measured from the backside of the collector layer 9 and shows a peak value of n-type impurity in the n<+>-type buffer layer 8; and the value of d2 is the initial depth where n-type impurity activation ratio a is equal to 0.3 in the region of n<+>-type buffer layer 8 deeper than d1 in the n<+>-type buffer layer 8. The activation ratio is defined by activated n-type impurity concentration n-type impurity concentration, in which the activated n-type impurity concentration is obtained by SR analysis, and n-type impurity concentration is obtained by SIMS analysis.
Patent TW-546904-B (TW)
Title: Method and apparatus for minimizing negative current build up in DC-DC converters with synchronous rectification
Inventor: ZHANG JUN
IPC: H02M1/00
Filed: 2001-12-19
Granted: 2003-08-11
Abstract: The present invention provides to a method and apparatus for minimizing or preventing negative current build up in DC-DC converters with synchronous rectification. The method turns the first synchronous rectifier off when the negative current is present in the first secondary winding and the first synchronous rectifier is on, and turns the second synchronous rectifier off when the negative current is present in the second secondary winding and the second synchronous rectifier is on.