Patent SG-11201803553U-A (SG)
Title: Process for the generation of thin inorganic films
Inventor: ADERMANN TORBEN
IPC: C23C16/455
Filed: 2016-11-30
Abstract: INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property Organization International Bureau (43) International Publication Date 8 June 2017(08.06.2017) WIPOIPCT (10) International Publication Number WO 2017/093283 A1 (51) International Patent Classification: C23C16/18 (2006.01) C07F15/04 (2006.01) C23C16/455 (2006.01) C07F15/06 (2006.01) C07F13/00 (2006.01) (21) International Application Number: (30) (71) (72) PCT/EP2016/079213 (22) International Filing Date: (25) Filing Language: (26) Publication Language: 30 November 2016 (30.11.2016) English English Priority Data: 15197604.0 2 December 2015 (02.12.2015) EP Applicants: BASF SE [DE/DE]; Carl-Bosch-Str. 38, 67056 Ludwigshafen am Rhein (DE). GEORG-AUGUST- UNIVERSITAT GOTTINGEN [DE/DE]; Wilhelmsplatz 1,37073 Gottingen (DE). Inventors: ADERMANN, Torben; Endemannstrasse 13, 69115 Heidelberg (DE). LOEFFLER, Daniel; Heinrich Heine Str. 2b, 67134 Birkenheide (DE). WILMER, Ha- gen; Ernst-Kunz-Strasse 33, 67071 Ludwigshafen (DE). SCHIERLE-ARNDT, Kerstin; Stuckertstr. 23a, 64673 Zwingenberg (DE). GERKENS, Jan; Goethe-Allee 20, 37073 Gottingen (DE). VOLKMANN, Christian; Gin- sterweg 6, 37077 Gottingen (DE). SCHNEIDER, Sven; Felix-Klein-StraBe 3, 37083 Gottingen (DE). (74) Agent: BASF IP ASSOCIATION; Basf SE, ZRX - C6, 67056 Ludwigshafen (DE). (81) Designated States (unless otherwise indicated, for every kind of national protection available): AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (84) Designated States (unless otherwise indicated, for every kind of regional protection available): ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG). Published: — with international search report (Art. 21(3)) (54) Title: PROCESS FOR THE GENERATION OF THIN INORGANIC FILMS oo n ON n O x nv M R I N_ 1 R R^-^R5 m (I) P (57) : The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. The present invention relates to a process comprising bringing a compound of general formula (I) into the gaseous or aerosol state and depositing the compound of general formula (I) from the gaseous or aerosol state onto a solid substrate, wherein M is Mn, Ni or Co, X is a ligand which coordinates M, n is 0, 1, or 2, R1, R2 are an alkyl group, an alkenyl group, an aryl group or a silyl group, m is 1, 2, or 3, R3, R4, and R5 are an alkyl group, an alkenyl group, an aryl group, an alkoxy group, or an aryloxy group, and p is 1, 2 or 3.