baber/WOPTO huggingface dataset:
Patent TW-466386-B (TW)
Title: System and method for controlling inline apparatus
Inventor: BYUN SUNG-JOON
IPC: H01L21/02
Filed: 1999-12-01
Granted: 2001-12-01
Abstract: Disclosed is an in-line apparatus system which comprises a plurality of sub-apparatus, a host, a plurality of apparatus controllers, and a master controller. The sub-apparatuses perform predetermined jobs on the substrates. The host stores information on the substrate to be processed in the sub-apparatus and information on jobs performed by the sub-apparatuses. The apparatus controllers respectively control substrate jobs in the sub-apparatuses according to the information on the substrates and jobs, and are interconnected via communications and share information on the substrates. The master controller, connected to the apparatus controllers, controls the apparatus controllers and receives job information of the sub-apparatuses from the apparatus controllers and transmits the job information to the host. The in-line apparatus system and its control method enable overall easy control and increase reliability.
Patent TW-429518-B (TW)
Title: Field effect transistor having buffer and raised source/drain regions
Inventor: TZENG HUA-JOU
IPC: H01L21/76
Filed: 1999-12-17
Granted: 2001-04-11
Abstract: The present invention discloses a manufacturing method for high speed conductive device in the integrated circuit which employs the shrinkage of gate dimension and the reduction of capacitance and resistance in the device to achieve the high speed conduction effect. The invention employs the poly-trench etching, silicon selective growth and dielectric spacer forming to define the line width of the gate to make the gate region smaller; and, with a dielectric buffer under the raised source/drain to greatly reduce the junction capacitance of the device; further, the design of using air barrier as the spacer can further reduce the overlap capacitance between the gate region and the source/drain region. And, the present invention can not only provide the raised source/drain polysilicon layer as the source for forming silicide but also provide the buffer underneath to prevent over-expansion of the metal. Therefore, the thick silicide can be formed without the junction leakage issue so as to effectively reduce the sheet resistance of the device.
Patent TW-524828-B (TW)
Title: Impact energy absorbent medium; energy absorbent and form compliant article for impact absorption and dissipation; method for forming viscoelastic, compliant, energy absorbent composition; self-conforming, compliant energy absorbent medium
Inventor: RHOADES LAWRENCE J
IPC: C08L83/14
Filed: 2000-02-03
Granted: 2003-03-21
Abstract: The present invention relates to an energy absorbent medium which is compliant and conformal in the absence of an applied force, and stiffens in proportion to the rate of an applied force to dissipate energy. A polymeric based material composition comprising the medium offers absorption and dispersion of impact energy that is directly proportional to the rate of force applied. Padding articles employing the novel medium are particularly useful in protecting the human body from sudden impact trauma and g-force side loads. The invention is a polymer composition medium capable of being customized to produce energy-absorbent padding formulations suitable for use in protecting animate and inanimate objects. The polymer composition medium comprises a blend of a polymer, a lubricant and a filler to produce a conformal absorbent which exhibits dilatant (shear thickening) characteristics under high rates of force or stress. The novel medium comprises a dilutent extended crosslinked viscoelastic polymer composition. The polymer has reformable sacrificial chemical bonds which are preferentially broken under a high rate of deformation and which reform under static conditions. Typical applications of this medium include absorbent for sports padding, athletic equipment, motor vehicle seats, bulletproof vests, medical equipment, industrial equipment, weaponry, and athletic playing fields.
Patent TW-499768-B (TW)
Title: Material for packaging cell, bag for packaging cell, and its production method
Inventor: YAMASHITA RIKIYA
IPC: H01M2/02
Filed: 2000-04-07
Granted: 2002-08-21
Abstract: A lithium battery comprises a pouch (4) and a lithium battery module (2) packaged in the pouch (4). The pouch (4) is formed from a battery packaging laminated structure (10). The laminated structure (10) has an outermost layer (11), a barrier layer (12) and an innermost layer (14), or an outermost layer (11), a barrier layer (12), an intermediate layer (13) and an innermost layer (14) superposed in that order. The outermost layer (11) is formed of a formable base material, the barrier layer (12) is formed of a impermeable base material having a barrier property, the intermediate layer (13) is formed of a formable base material and the innermost layer (14) is formed of a heat-adhesive base material.
Patent TW-593410-B (TW)
Title: Liquid crystal polymer
Inventor: UENO RYUZO
IPC: C08G63/668
Filed: 2000-05-04
Granted: 2004-06-21
Abstract: Disclosed is a liquid crystalline polymer which is obtained by copolymerizing at least one polyfunctional aromatic monomer selected from the group consisting of the compounds represented by the formulae (I), (II) and (III) below with at least one polymerizable monomer. The liquid crystalline polymer of the present invention is excellent in heat resistance, molding properties, flow properties and mechanical properties, especially it provide molded article with improved weld strength.
Patent TW-417348-B (TW)
Title: Vibration driver of pager
Inventor: SUYAMA HIDEO
IPC: B06B1/04
Filed: 1997-02-19
Granted: 2001-01-01
Abstract: A vibration driver of pager is provided, in which the vibration of electroacoustic converter is driven by low frequency and used to strike a fixed section so that the vibration caused by the striking can be transferred to the outside. Further, the vibration section and the fixing section of the coil are connected by the elastic member in between. While occurring striking, a magnetic path composed of magnet and yoke is employed for softly supporting, and a polarized AC current is used to drive so as to effectively increase the vibration. In order to easily assemble and prevent damage and loss to the characteristics, it is preferably to provide an annular molding member with a hook-like protrusion around the magnetic path for connecting the hook-like object of rubber member and effectively supporting the magnetic path.
Patent TW-464948-B (TW)
Title: Method and apparatus of forming coating film
Inventor: HASHIMOTO HIROSHI
IPC: G03F7/00
Filed: 2000-09-22
Granted: 2001-11-21
Abstract: This invention aims to provide a method and apparatus of forming coating film, in which an annular cover with an opening is mounted on a rotary cup. Subsequently, a resist spraying nozzle sprays a resist liquid via the opening of the annular cover onto a substrate. Almost simultaneously, the substrate is rotated to facilitate formation of a coating film on the substrate. Next, a small lid is mounted in the opening of the cover. At the same time, the substrate is rotated to adjust the film thickness of the resist film. Hence, the film thickness of the coating film can be made consistent. Even if dynamic coating is adopted, sputtering of the coating liquid can be positively prevented from the start to the end of the coating process.
Patent TW-529115-B (TW)
Title: Semiconductor device
Inventor: INOUE KOSUKE
IPC: H01L23/29
Filed: 2000-11-01
Granted: 2003-04-21
Abstract: The purpose of the present invention is to realize a semiconductor device capable of having flip-chip connection without the need of under filling. The invention is provided with the followings: a semiconductor device; the insulation layer on the semiconductor device, in which the insulation layer is formed by printing the insulation material containing particles through the use of mask; and the external connection terminals, which are formed on the insulation layer and are connected with the electrodes provided for the semiconductor device.
Patent TW-I262916-B (TW)
Title: Trans olefinic glucokinase activators
Inventor: CORBERTT WENDY LEA
IPC: C07C317/44
Filed: 2000-12-14
Granted: 2006-10-01
Abstract: 2,3-Di-substituted trans olefinic N-heteroaromatic or urido propionamides with said substitution at the 2-position being a substituted phenyl group and at the 3-position being a cycloalkyl ring, said propionamides being glucokinase activators which increase insulin secretion in the treatment of type II diabetes.
Patent TW-521235-B (TW)
Title: Driving method of plasma display panel, plasma displaying device and driving means for plasma display panel
Inventor: HASHIMOTO TAKASHI
IPC: G09G3/288
Filed: 2001-01-08
Granted: 2003-02-21
Abstract: Driving method of plasma display panel (PDP) is outlined in the invention, where a simple constitution is used to generate plural pulses so as to achieve the purpose of stabilizing the plasma display panel operation. In a reset period, through applying a rectangular pulse Pya of positive polarity to an electrode Y and applying a CR pulse Pxa of negative polarity to an electrode X, a full lighting pulse is applied in between the electrodes X and Y. The application of the voltage is stopped before a CR pulse Pxc reaches a final potential so as to generate the pulse Pxa. A full erase pulse Pxb made of a CR pulse having a polarity reverse to that of the pulse Pxa is applied to the electrode X. An erase operation reverses the polarity of wall charges accumulated by a full lighting to effectively perform a potential adjustment operation. The potential control pulse Pxc is applied to the electrode X to generate a discharge, and the state of the wall charges in a discharge cell is controlled by the discharge to generate an optimal amount of wall charges for a subsequent addressing discharge. The final voltage of the pulse Pxc is set equal to a voltage (-Vxg) of an address pulse Pa.
Patent TW-491799-B (TW)
Title: Conveyance device provided with a plurality of running motors
Inventor: MATSUMOTO TOMOHARU
IPC: H02P5/00
Filed: 2001-01-10
Granted: 2002-06-21
Abstract: To determine a running speed pattern by providing upper and lower operating motors 16, 18 on a stacker crane 4 to output a predetermined torque by the motor on the side where load from an elevating base 8 is large. The capacity of the operating motor can be taken out to the maximum extent and the running motor can run at high acceleration and deceleration speed, because the operating motor on the high load side can be controlled so as to output the predetermined torque.
Patent TW-486561-B (TW)
Title: Gyroscopic sensor
Inventor: JEANROY ALAIN
IPC: G01C19/56
Filed: 2001-02-20
Granted: 2002-05-11
Abstract: The invention concerns a gyroscopic sensor comprising: a sensing element (1) with which are associated detecting and energizing electrodes (8), conductive rods (6) connected in particular to said electrodes (8), a protective housing (3, 4) enclosing the sensing element (1) and the electrodes (8) and having insulating feedthroughs (7) for the conductive rods (6); and support means interposed between the sensing element (1) and the electrodes (8) and the housing (3, 4). The invention is characterized that said su pport means consist of the conductive rods (6) themselves which are designed to be elastically deformable.
Patent TW-588577-B (TW)
Title: Circuit wiring board, and method for making semiconductor device and circuit wiring board
Inventor: NAKAMURA HIDEHIRO
IPC: H01L23/498
Filed: 2001-02-26
Granted: 2004-05-21
Abstract: The present invention provides a wiring board that can realize miniaturization of a device by terminal miniaturization and multiple terminals and realize a three-dimensional mounting structure, and to provide the semiconductor device and method of manufacturing the wiring board. The wiring board 1 comprises: an insulating base material 10 having a connection hole 11, a buried conductor 12 arranged in the range that its back surface does not reach the surface of the connection hole 11, and a wiring layer 14 connected to the buried conductor 12. The buried conductor 12 can complement the film thickness of the wiring layer 14 and form a positioning part 110 so as to build the three-dimensional mounting structure in the back side of the connection hole 11. The wiring layer 14 comprises a terminal part 14A and a wiring part 14B of which the film thickness is thin, and an electrode part 14C of which the film thickness is thick, and making the terminal part 14A and the wiring part 14B thin films and raising its bottom of the buried conductor 12 are carried out in the same process. The electrode part 14C of the wiring board 1 is provided with a semiconductor element 2.
Patent TW-492073-B (TW)
Title: Method and apparatus for manufacturing semiconductor devices
Inventor: TSUNEDA MASAYUKI
IPC: C23C16/44
Filed: 2001-03-14
Granted: 2002-06-21
Abstract: The present invention is a method and apparatus for manufacturing the Ru film or ruthenium oxide film semiconductor devices on the substrate. The purpose is to have a semiconductor manufacturing method and a semiconductor manufacturing apparatus capable of manufacturing semiconductor devices without the need of specifically determining an optimal configuration of a gas mixing chamber (6) with care or elaboration. A ruthenium raw gas feed pipe (4) and an oxygen-containing gas feed pipe (5) are merged with each other at a location upstream of a gas mixing chamber (6), so that the ruthenium raw gas and the gas containing oxygen atoms (e.g., oxygen (O2), ozone (O3), etc.) are mixed with each other prior to entering the gas mixing chamber (6).
Patent TW-526482-B (TW)
Title: Magnetic duplication method and magnetic duplication apparatus
Inventor: HASHI HIDEYUKI
IPC: G11B19/04
Filed: 2001-03-28
Granted: 2003-04-01
Abstract: The invention comprises procedure 1(ST103) for disk preparation, procedure 2 forming lubricant layer on disk (ST105), procedure 3 (ST108) at least converting magnetism of the magnetic film formed on single side to bond disk with mother disk by applying external magnetic field to form magnetic film pattern on the magnetic duplication mother disk and to duplicate on disk, and procedure 4 (ST104, ST106) at least applying polishing treatment of bonded side of disk and mother disk for magnetic duplication. Follow the sequence of procedure 1, procedure 4, procedure 2, procedure 4 and procedure 3 to carry out.
Patent TW-531918-B (TW)
Title: Flat, bonded-electrode rechargeable electrochemical cell and method of making same
Inventor: GOZDZ ANTONI S
IPC: H01M50/489
Filed: 2001-05-02
Granted: 2003-05-11
Abstract: A Li-ion battery cell comprising a polymeric matrix positive electrode layer member, a polymeric matrix negative electrode layer member, and an interposed microporous polyolefin separator layer member is laminated into a unitary, flexible cell structure by means of heat and pressure without necessity of applied interlayer adhesive. A volatile vehicle solution of a primary plasticizer for the electrode member polymer matrix is applied to the microporous separator member where it is absorbed into the porous structure. Evaporation of the volatile vehicle solvent deposits the plasticizer upon and within the pores of the separator member. During the lamination operation the plasticizer is forced into contact with the electrode member polymer where it softens the polymer into a thermoplastic adhesive in the region of the electrode/separator interface, thereby enabling the electrode polymer alone to form a strong bond to the separator upon cooling.
Patent TW-494538-B (TW)
Title: Method and apparatus for cutting a semiconductor wafer
Inventor: HIGASHI MITSUTOSHI
IPC: B23K26/00
Filed: 2001-05-08
Granted: 2002-07-11
Abstract: A method for cutting a semiconductor wafer is provided. A mount tape is adhered to a back surface of the semiconductor wafer. The mount tape comprises a resin base and a mesh-like member made of a material harder than that of the resin base and embedded in the resin base. A beam-like liquid jet is ejected toward a front surface of the semiconductor wafer and, simultaneously, a laser beam is transmitted axially through said beam-like liquid jet, so that the semiconductor wafer is cut into individual pieces, by said laser beam, together with the resin base of the mount tape, while the mesh-like member is not cut, but remains in its connected state.
Patent TW-582075-B (TW)
Title: Treatment method for preventing boron phosphorus precipitation on surface of inter-dielectric layer
Inventor: TSAI YU-TAI
IPC: H01L21/3205
Filed: 2001-05-10
Granted: 2004-04-01
Abstract: A kind of treatment method for preventing boron phosphorus precipitation on surface of inter-dielectric layer is disclosed. A borophosphosilicate glass (BPSG) is deposited as an inter-dielectric layer on the surface of semiconductor devices. Then, before a high temperature reflow is carried out to planarize surface of the BPSG, a hydrogen plasma is used to treat the surface of BPSG so that dangling bonds on the surface of BPSG form bonding with hydrogen and thus unsaturated bonds on the surface of BPSG is reduced. Therefore, in the subsequent high temperature reflow process, no BPSG crystal precipitation will occur and thus no defects will form due to the boron phosphorus crystal precipitation.
Patent TW-I252270-B (TW)
Title: A method for the fluorescent whitening of cotton
Inventor: CUESTA FABIENNE
IPC: D06L4/621
Filed: 2001-06-13
Granted: 2006-04-01
Abstract: A method for the fluorescent whitening of cotton in a discontinuous process comprising contacting the cotton, in an aqueous bath having a Ph value of 6 or less, with one or more compounds of the formula, wherein R1 represents an -SO2R3, -SOR3, CO2M, -CO2R3, -CONR3R4, -CN or -NO2 substituent, R2 is -NH2, -NH(C1-C4alkyl), -N(C1-C4alkyl)2, -NH(C2-C4hydroxyalkyl), -N(C2-C4hydroxyalkyl)2, -NH(C1-C4alkoxy)(C1-C4alkyl), -N[(C1-C4alkoxy)(C1-C4alkyl)]2, NHC2-C4alkylsulphonic acid, morpholino, piperidino pyrrolidino, an amino acid or amino acid amide residue from which a hydrogen atom on the amino group has been removed, -OC1-C4alkyl or -OC1-C4hydroxyalkyl, R3 and R4 each, independently, represent hydrogen, C1-C4alkyl, C2-C4hydroxyalkyl or C1-C4alkoxyC1-C4alkyl and M is H, Na, Li, K, Ca, Mg, ammonium, or ammonium that is mono-, di-, tri- or tetrasubstituted by C1-C4alkyl, C2-C4hydroxyalkyl or a mixture thereof, some of which are new.
Patent TW-493245-B (TW)
Title: Dual damascene manufacture method for blocking out-gassing and formation of protruding structure
Inventor: TSAI MING-SHING
IPC: H01L21/768
Filed: 2001-06-15
Granted: 2002-07-01
Abstract: This invention provides a dual damascene manufacture method for blocking out-gassing and formation of protruding structure, which consists of the following steps: etching an anti-reflection layer, a second low dielectric constant dielectric layer, a second etching stop layer, a first low dielectric constant dielectric layer to form a trench in the above-mentioned films; depositing a barrier layer along the surface of the trench and on the anti-reflection layer; defining a resist pattern on the top surface of the barrier layer, and using the resist pattern as the etching mask to etch the barrier layer, the anti-reflection layer and the second low dielectric constant dielectric layer till stopping on the second etching stop layer to form an opening; using dry etching to remove the barrier layer on the horizontal surface and residual film layers at the sidewall of the trench; the previous step also removes the first etching stop layer at the bottom of the trench; depositing another barrier layer on the trench and surface of the opening and forming a conductive layer on the barrier layer filling the trench and the opening; and, finally, completing the dual damascene structure by removing part of the conductive layer using chemical mechanical polishing to achieve planarization.
Patent TW-492233-B (TW)
Title: Fiber for optical amplification and optical amplifier using the same
Inventor: AISO KEIICHI
IPC: H01S3/10
Filed: 2001-06-19
Granted: 2002-06-21
Abstract: To provide the non-linear fiber optics for optical amplification capable of preventing amplification efficiency loss resulting from the concentration consumption of Erbium ion. In the core portion of Erbium-doped fiber amplifier, add at least one of the rare-earth elements other than Erbium, whose ion radius ranges from 70% to 130% of Erbium ion, such as Yb.
Patent TW-512534-B (TW)
Title: Semiconductor device and the manufacturing method thereof
Inventor: TOKUSHIGE NOBUAKI
IPC: H01L21/28
Filed: 2001-11-07
Granted: 2002-12-01
Abstract: The subject of the present invention is to prevent the deterioration by the process for the gate insulation layer and obtain the semiconductor device with high reliability. The solution is to provide the manufacturing method for the semiconductor device, which comprises: (a) forming a virtual gate pattern on the intermediary gate insulation layer in the semiconductor substrate; (b) forming the insulation layer on the sidewall of the virtual gate pattern; (c) at least forming a layer with the same material in the contact plug forming area; (d) forming inter-layer insulation layer on the substrate at the periphery of the layer with the same material; (e) removing the virtual gate pattern and the layer with the same material configured on the contact forming area to form the trench in the inter-layer insulation layer; and, (f) burying the conductive material in the trench to form the gate electrode and the contact plug.
Patent TW-517349-B (TW)
Title: Method for manufacturing nonvolatile semiconductor memory with narrow variation in threshold voltages
Inventor: YAMAGATA SATORU
IPC: H01L21/8247
Filed: 2001-11-27
Granted: 2003-01-11
Abstract: In a method for manufacturing a memory cell of a nonvolatile semiconductor memory, a floating gate 3, first insulating film 7 and control gate 8 are successively stacked on a tunnel oxide film 2 formed on a substrate of the nonvolatile semiconductor memory. The control gate 8, the first insulating film 7 and the floating gate 3 are patterned in stripes. Subsequently, a damaged portion of the tunnel oxide film 2 immediately below a sidewall of the floating gate 3 is removed by isotropic etching. A second insulating film 10 is deposited to cover the control gate 8, sidewalls of the first insulating film 7, the floating gate 3 and the tunnel oxide film 2. Thereby, a variation in threshold voltages between memory cells is suppressed.
Patent TW-530436-B (TW)
Title: Connector and method for fastening wire
Inventor: VICTOR JAY E
IPC: H01R4/48
Filed: 2001-12-13
Granted: 2003-05-01
Abstract: Connector apparatus and method for fastening a wire removably and without the use of tools, having a wedging member pivotally coupled with a base member, defining a gap for receiving of a bare wire such that wedging member presses wire against the base member.
Patent TW-593244-B (TW)
Title: Process for removing water from aqueous methanol
Inventor: GILBERT BENJAMIN A
IPC: C07C29/82
Filed: 2001-12-26
Granted: 2004-06-21
Abstract: A process for separating water from methanol in an aqueous methanol initial mixture, comprising subjecting said mixture to azeotropic distillation in the presence of sufficient added methyl acrylate to form an azeotrope with most of the methanol in said initial mixture such that a substantial proportion of methanol in the initial mixture is removed as an azeotrope of methanol and methyl acrylate in the overhead vapors resulting from said distillation and a major proportion of water in said initial mixture is removed in the liquid residue of said distillation.