baber/WOPTO huggingface dataset:
Patent TW-366629-B (TW)
Title: Filter device and dual-band radio system in which the filter device is used
Inventor: UEDA MASANORI
IPC: H04B1/66
Filed: 1996-08-22
Granted: 1999-08-11
Abstract: A filter device includes at least two filter elements, provided in a package, each of the filter elements passing only signals within a predetermined frequency band, the predetermined frequency bands of the at least two filter elements having center frequencies which are distinct from each other. An input terminal connected to and shared by respective inputs of the filter elements. An output terminal connected to and shared by respective outputs of the at least two filter elements. At least one of a first phase matching unit and a second phase matching unit, the first phase matching unit provided between the input terminal and the inputs of the filter elements, and the second phase matching unit provided between the output terminal and the outputs of the filter elements. In the filter device, the filter elements and at least one of the filter phase matching unit and the second phase matching unit are packaged on a surface of the package.
Patent TW-312823-B (TW)
Title: Manufacturing method of emitter of insulated-gate bipolar transistor
Inventor: LIN RUEY-LIN
IPC: H01L21/328
Filed: 1996-08-27
Granted: 1997-08-11
Abstract: A Manufacturing method of emitter of insulated-gate bipolar transistor (IGBT) includes: a. providing a substrate as the collector of the IGBT and forming a silicon layer on the substrate where plural number of wells with electric polarity opposite to the silicon layer is formed to form plural number of active regions; b. forming a gate oxide layer on the active regions; c. forming a polysilicon layer on the gate oxide layer; d. forming a pad oxide layer on the polysilicone layer; e. forming a silicon nitride layer on the pad oxide; f. define the silicon nitride layer, the pad oxide, the polysilicon layer, and the gate oxide to form the gate of the IGBT; g. forming oxide layer on the side walls of the polysilicon layer of the gate; h. performing ion implantation to form the ion channels in the wells of the IGBT; i. forming a metal silicide layer on the exposed surface of the silicon layer to build the emitter of the IGBT.
Patent TW-364026-B (TW)
Title: Device for holding single crystal ingot
Inventor: HIRAISHI YOSHINOBU
IPC: C30B35/00
Filed: 1996-10-17
Granted: 1999-07-11
Abstract: A holding device for taking a single crystal ingot lifted by a lifting device from the lifting device and carrying it. The holding device comprises a shaft, an up and down movement base mounted on the shaft, at least one pair of holding arms of which the front end holds a peripheral surface of the single crystal ingot at a side faced each other, driving means for driving each holding arms independently, detecting sensors for detecting a time that the holding surfaces of each holding arms have reached a predetermined distance from the outer peripheral surface of the single crystal ingot, control means for stopping and driving the holding arms on the basis of the detecting signal of the detecting sensor. When the case that the holding surfaces of each holding arms have reached the predetermined distance from the outer peripheral surface of the single crystal ingot is detected, each pairs of the holding arms are driven simultaneously in order to hold the single crystal ingot by means of the holding arms.
Patent TW-329389-B (TW)
Title: Dispenser adapted for dispensing and self-administering a plurality of successive individual doses of an estrogen and a progestogen
Inventor: JORG ELLIESEN
IPC: B65D81/32
Filed: 1996-10-23
Granted: 1998-04-11
Abstract: A dispenser adapted for dispensing and self-administering a plurality of successive individual doses of an estrogen and a progestogen, the dispenser comprising: (a) a first container comprising: (i) a first chamber, (ii) a discharge port and (iii) means for applying a discharge pressure on the first chamber; (b) a second container comprising: (i) a second chamber, (ii) a discharge port and (iii) means for applying a discharge pressure on the second chamber; (c) a first metering means comprising (i) a frist adjustment means; (d) a second metering means comprising (ii) a second adjustment means; (e) a dispensing means.
Patent TW-342434-B (TW)
Title: Process-gas supply device
Inventor: OMI HISASHI
IPC: H01L21/304
Filed: 1996-12-24
Granted: 1998-10-11
Abstract: A process-gas supply device characterized in comprising: a supply line connected to a supply source containing a liquid organoaluminum compound and a processor performing a film formation processing with the organoaluminum compound on a subject; pressure means for supplying the organoaluminum compound of the supply source through the supply line; evaporation means installed in the supply line and vaporizing the pressurized liquid organoaluminum compound; purging gas supply means connected to the supply line and introducing a pressurized purging gas to the supply line; solvent introduction means connected to the supply line and introducing a solvent for dissolving the organoaluminum compound to the supply line; discharge means connected to the supply line for discharging the liquid in the supply line; and control means installed on a plurality of valves of the supply line for controlling the fluid flow moving through the supply line by the switching movements of the valves.
Patent TW-334574-B (TW)
Title: Developing apparatus for a cathode-ray-tube panel
Inventor: YOUNT-KAG KIM
IPC: H01J9/20
Filed: 1997-01-23
Granted: 1998-06-21
Abstract: A crt panel developing apparatus includes a body; a panel fixing portion, which is placed in the upper portion of the body and is structured so as to ground the conduction layer of the panel; a developing gun, which sprays powder that has been coated with organic matter on to the panel fixed to the panel fixing portion; a supply line, which is a passageway for the powder and air to be supplied to the developing gun; an air supply apparatus and a powder supply apparatus which ate connected to the supply line; a powder charging portion, which is formed on the supply line that charges the powder that passes through the supply line; a turbulent air line which supplies air to the powder charging portion; a power supply apparatus that supplies electrical power to the powder charging portion; an evaporation portion, where the organic matter evaporates; an evaporation air line which supplies air to the evaporation portion; an evaporated organic matter line, which connects the evaporation portion and the supply line; an organic matter supply apparatus, which supplies organic matter to the evaporation portion; and an organic matter line that connects the evaporation portion and the organic matter supply apparatus.
Patent TW-412569-B (TW)
Title: Polyarylene sulfide composition
Inventor: TSUDA TAKASHI
IPC: C08G75/02
Filed: 1997-04-02
Granted: 2000-11-21
Abstract: A composition of polyarylene is disclosed, comprising 100 parts by weight of (A) polyarylene sulfide and 0.01 to 5.0 parts by weight of (B) at least a silane compound, characterized in that an extract of the polyarylene sulfide with methylene chloride is in an amount of not more than 0.7% by weight, a melt viscosity V6 is 20 to 15,000 poises and a content of -SX groups is at least 15 micro moles/g, wherein X represents an alkali metal or a hydrogen atom, and the silane compound is selected from the group consisting of methacryloxy silane compounds and ureido silane compounds. Also disclosed is a molded article having a weld part, obtained by injection molding a composition as mentioned above, but the silane compound (B) is an epoxy silane compound.
Patent TW-423971-B (TW)
Title: Conditioning shampoo compositions containing select hair conditioning agents
Inventor: COFFINDAFFER TIMOTHY WOODROW
IPC: A61Q5/02
Filed: 1997-04-17
Granted: 2001-03-01
Abstract: Disclosed are aqueous conditioning shampoo compositions comprising an anionic detersive surfactant component; an organic, cationic, hair conditioning polymer; and from about 0.01% to about 1.0% by weight of a water insoluble, synthetic ester having a viscosity of from about 1 to about 300 centipoise, and which conforms to either of the following formuls wherein R1 is an alkyl, alkenyl, hydroxyalkyl or hydroxyalkenyl group, having from 7 to 9 carbon atoms; n is a positive integer having a value of from 2 to 4; R2 is an alkyl, alkenyl, hydroxyalkyl or hydroxyalkenyl group, having from 8 to 10 carbon atoms; and Y is an alkyl, alkenyl, hydroxy or carboxy substituted alkyl or alkenyl, having from about 2 to about 20 carbon atoms; and an organic, water insoluble, conditioning oil having a viscosity of from about 1 to about 300 centipoise, selected from the group consisting of hydrocarbon oils, fatty esters other than the above synthetic esters, and combinations thereof. The organic conditioning oil is preferably a polyolefin. The shampoo compositions provide improved hair conditioning performance, and eliminates or minimizes the slimy, excessively conditioned, wet hair feel often associated with the use of a cationic hair conditioning polymers.
Patent TW-345706-B (TW)
Title: BGA mold assembly for encapsulating BGA substrates of varying thickness
Inventor: TIANG SIONG LIAN
IPC: B29C45/14
Filed: 1997-06-19
Granted: 1998-11-21
Abstract: A BGA mold assembly for encapsulating BGA substrates of varying thickness, the assembly having a dual in-line cavity bar which clamps the BGA substrate during an encapsulation process, the mold assembly comprising: a first drive mechanism for appropriately controlling the clamping force applied on a first bar; a second drive mechanism for appropriately controlling the clamping force applied on a second bar; such that the first and the second drive mechanism can independently control the first bar and the second bar.
Patent TW-348272-B (TW)
Title: Method and apparatus for depositing planar and highly oriented layers
Inventor: TED TIE GUO
IPC: H01L21/285
Filed: 1997-10-06
Granted: 1998-12-21
Abstract: A chemical vapor deposition process for depositing a substantially planar, highly reflective layer on a substrate, the process comprising the steps of: (a) placing the substrate in a process zone; (b) in an initial seeding stage, (I) heating the substrate to temperatures Ts within a first lower range of temperatures ΔTs, and (ii) introducing seedling gas into the process zone to deposit a substantially continuous seeding layer on the substrate; and (c) in a subsequent oriented crystal growth stage, (I) maintaining the substrate at deposition temperatures Td within a second higher range of temperatures ΔTD, and (ii) introducing deposition gas into the process zone to form an oriented crystal growth layer on the seeding layer, the oriented crystal growth layer having a highly reflective surface.
Patent TW-365032-B (TW)
Title: Method of etching copper or copper-doped aluminum
Inventor: BRENNAN KENNETH D
IPC: H01L21/3213
Filed: 1997-10-22
Granted: 1999-07-21
Abstract: An embodiment of the instant invention is a method of etching a conductive structure comprised of copper and overlying a semiconductor substrate, the method comprising the step of: subjecting the conductive structure to a combination of plasma and etchant, and a gaseous aluminum source. Preferably, the conductive structure is comprised of aluminum and copper (more preferably, it is comprised of aluminum and 1 to 4% by weight copper) or it may be substantially comprised of substantially pure copper. In addition, the etchant is preferably introduced into the process chamber in a gaseous state and is comprised of Cl2. gaseous aluminum source may be comprised of: DMAH, trimethylaluminum, dimethylalane, trimethylaminealine, dimethylethylaminealane, dimethylethylaminedimethylalane, or AlCl3.
Patent TW-347428-B (TW)
Title: Fire resistance sheet glass
Inventor: SUGIURA KIMINARI
IPC: E04C1/42
Filed: 1997-11-14
Granted: 1998-12-11
Abstract: A fire resistance sheet glass comprising, based on weight percent, SiO2 ... 56~68%; Al2O3 ... 0.2~5%; ZrO2 ... 0~3%; Li2O ... 0~0.5%; Na2O ... 0.2~4%; K2O ... 6~14%; MgO ... 1~14%; CaO ... 6~12%; SrO ... 0~12%; BaO ... 0~13%; ZnO ... 0~2%; and Na2O + K2O ... 8~14%; MgO + CaO ... 8~15%; SrO + BaO ... 8~14%; MgO + CaO + SrO + BaO ... 20~27%; SO3 + Sb2O3 ... 0~1%; and the average thermal expansion thereof at 50~350℃ being 75~95 X 10-7/K, the warping point thereof exceeding 540℃, the temperature at 102 poise being less than 1560℃, and the softening point thereof being over 780℃.
Patent TW-384355-B (TW)
Title: Cylinder element, such as a cylinder liner, a piston skirt or a piston ring, in an internal combustion engine of the diesel type, and a piston ring for such an engine
Inventor: MOCZULSKI LECH
IPC: C23C4/08
Filed: 1997-11-25
Granted: 2000-03-11
Abstract: A cylinder element for an internal combustion engine of the diesel type, the maximum combustion pressure of which at full load exceeds 100 bar, includes two layers of Al-bronze sprayed-on on top of each other, the outer layer of which being a running-in layer (37) having an average hardness of at the most 330 HV20, and the subjacent layer being a wear layer (36) having an average hardness exceeding that of the runningíVin layer and being at least 130 HV20.
Patent TW-373268-B (TW)
Title: Low temperature etch process utilizing power splitting between electrodes in AN RF plasma reactor
Inventor: WU ROBERT W
IPC: H01L21/302
Filed: 1998-01-23
Granted: 1999-11-01
Abstract: A kind of high density plasma etching reactor to implement low temperature (< 200 DEG C) oxidizing etching method, especially can be used on a double layer joint structure, the reactor in the meantime having parallel electrode and a reactive thread ring for coupling the inject frequency energy in the plasma. The electrode is formed with a fluorine scavenger, such as silicon, glass carbonate, silicon carbonate. The inject frequency deviate pressure energy between the two electrodes to be separated to a pre-determined selectable proportion. 25% of the total inject frequency capacity is activated with scavenging to achieve appropriate remain to obtain etch to stop selectively. The etch composite is typically comprising C2F6, CO, and Ar (or C4F8), and reaction room is maintained below 180 DEG C. Using the method of this invention to etch TESO grow oxidized to generate central point treating result, the result for oxidized etch proportion is greater than 800 nm/min and for multi-crystal silicon selection is greater than 50:1.
Patent TW-372981-B (TW)
Title: High activity polyethylene catalyst
Inventor: HUSBY PER KRISTIAN
IPC: C08F4/02
Filed: 1998-02-17
Granted: 1999-11-01
Abstract: A catalyst composition for polymerization ethylene and alpha-olefins is prepared with a magnesium compound and a titanium compound, contacting the resulting solution with a halogen compound to form a precursor, and activating the precursor with dimethylaluminum chloride. Also disclosed is a process for copolymerizing ethylene and alpha-olefins in the presence of the catalyst of the invention. The polymer products have multimodal molecular weight distribution unlike unimodal molecular weight distribution polymer prepared with similar catalyst precursors by activated with different alkylaluminum activators, e.g. triethylaluminum or trimethylaluminum. As a result of this, the polymer products prepared with the catalyst have better mechanical properties.
Patent TW-386207-B (TW)
Title: Memory card interface apparatus
Inventor: JONES ALAN
IPC: G06F13/38
Filed: 1998-03-27
Granted: 2000-04-01
Abstract: A memory card interface apparatus enables a removable memory card to communicate with a number of peripheral devices directly without the need for the memory card's host or a host computer. The interface apparatus includes a micro-controller operating with an internal bus to control, process and route signals between the removable memory and a peripheral device via a series of memory and device interfaces. A control panel and/or remote control allows a user to interact with the interface apparatus. In one embodiment, the interface apparatus also allows a host computer to communicate with the memory card via one of the peripheral device ports. In other embodiments, the interface apparatus serves as a memory card printer controller or as a memory card player and/or recorder when interfaced with consumer electronics.
Patent TW-407127-B (TW)
Title: The container with the cap containing an appended push-and-press portion
Inventor: YAMADA CHIYOE
IPC: B65D83/08
Filed: 1998-04-02
Granted: 2000-10-01
Abstract: This invention discloses a kind of container having the cap with an appended push-and-press portion, which is characterized in comprising: a main body portion which forms the opening portion on the top plate and has a rotatable cap body that closes the opening portion; and a wearable thin film which is settled on the top plate, covers the above opening portion, and forms a hole to take out the contents inside the above main body portion; and a flat concave push-and-press portion is formed at the bottom of the above-mentioned cap body; when the above-mentioned cap body is closed, said push-and-press portion presses and contacts the neighboring of the taking-out holeof the above wearable thin film. The cap of this container is easy to open and close, and maintains the gas sealing property inside the container and the inside sanitation status.
Patent TW-482836-B (TW)
Title: Processes for controlling the generation of heat during stabilization of a pitch fiber batt and pitch fibers
Inventor: ZIMMERMAN ANDREA K
IPC: D01F9/145
Filed: 1998-04-09
Granted: 2002-04-11
Abstract: The present invention provides a process for thermosetting pitch fibers in reduced times, at low concentrations of oxygen and at higher temperatures than previously possible. Additionally, the present invention provides a pitch fiber which has an oxygen diffusion rate to the center of the fiber which is competitive with the rate of oxidation at the fiber's surface. Further, the present invention provides a high density pitch fiber batt which thermosets without loss of fiber structure.
Patent TW-381348-B (TW)
Title: Method for preventing CMOS wells damaging gate oxide
Inventor: WANG MU-JIUN
IPC: H01L21/8238
Filed: 1998-06-11
Granted: 2000-02-01
Abstract: A kind of method for preventing CMOS wells damaging gate oxide that forming the first plug and the second plug in the dielectric layer and connecting to the substrate and well respectively; employing the conductive layer to bridge the plugs for the connection of P(N) substrate and N(P) well and make both voltages of the same. Therefore, during proceeding the plasma processes, the N(P) well floating state will not exist so that the gate oxide will not be influenced by the N(P) wells.
Patent TW-577874-B (TW)
Title: Process for the production of trimellitic acid and process for the production of trimellitic acid anhydride
Inventor: TANAKA KAZUO
IPC: C07C51/573
Filed: 1998-07-16
Granted: 2004-03-01
Abstract: A process for the production of a trimellitic acid by oxidizing dialkyl aromatic aldehyde and/or its oxide derivative in a liquid phase, the oxidation being carried out in a lower aliphatic carboxylic acid solvent having a water content of 5 to 70% by weight in the presence of a catalyst containing a heavy metal and bromine or being carried out in a solvent containing a lower aliphatic carboxylic acid in the presence of a bromine-manganese catalyst system containing zirconium and/or cerium, and a process for the production of high-quality trimellitic acid anhydride from the trimellitic acid.
Patent TW-519501-B (TW)
Title: Electrode storage and exchange device for electric discharge machine
Inventor: LIN TUNG-HAN
IPC: B23H1/04
Filed: 1998-09-11
Granted: 2003-02-01
Abstract: An electrode storage and exchange device of a fine aperture electric discharge machining is suitable for a fine aperture discharge machining operation with a plurality of specifications and a plurality of electrodes, in which the electrodes for discharge are mounted on storage seats of a suitable number and having a buffer device. With movements in the X-axis, Y-axis or Z-axis, carried out on the electric discharge machine, together with a electrode clamp capable of rotating forward/backward, enable the electrode clamp to automatically retrieve and/or return the electrodes from the storage seats, which is characterized in that the storage seats comprise a bearing plate and a buffer device, the bearing plate engaging the electrode clamp, and the buffer device compensating the displacement caused by the forward/backward rotation of the electrode clamp engaging the bearing plate.
Patent TW-374973-B (TW)
Title: Strobe compatible digital image sensor with low device count per pixel analog-to-digital conversion
Inventor: O'CONNOR DENNIS M
IPC: G01J1/42
Filed: 1998-11-26
Granted: 1999-11-21
Abstract: What is disclosed is a method having the steps of accumulating charge in a photo sensor to arrive at a photo sensor voltage; incrementing a value in a counter; generating a reference voltage based on the value in the counter; determining whether the photo sensor voltage is greater than the reference voltage; and, if the photo sensor voltage is greater than the reference voltage, then loading a memory with the value in the counter. What is also disclosed is an apparatus having a photo sensor; a comparator coupled to the photo sensor; a switching element coupled to the photo sensor; an AND-gate coupled to the comparator; and, a memory coupled to the AND-gate.
Patent TW-396610-B (TW)
Title: A capacitor formed by high dielectric constant stuff
Inventor: LEE MOON-HEE
IPC: H01L21/822
Filed: 1998-12-01
Granted: 2000-07-01
Abstract: A method for form storage cell capacitors is disclosed, which is applied in DRAM process. At a semiconductor substrate with node, deposit a barrier layer and platinum layer on contact plug, wet-etch the barrier layer to form a reverse side band under the platinum layer and a sidewall spacer above the side band and under the platinum. There are two characteristics in said method: one is the barrier is embraced by oxide layer, the other is a platinum layer is formed to make for a storage node electrode of capacitor, with a aslant plate over 80 DEG. The upper platinum, with a fast aslant structure over 80 DEG grade, is formed by two etching process, one is dry etching process to partially etch the upper platinum layer, the other is wet etching process to partially etch the residual of the upper platinum.
Patent TW-396553-B (TW)
Title: Manufacturing method of the IC module
Inventor: CHIOU WEN-WEN
IPC: H01L23/00
Filed: 1998-12-17
Granted: 2000-07-01
Abstract: This invention is related to a way of producing IC module, it comprises of following procedures: (a) Taking advantage of a circuit board that installed at least a set of module circuit which has at least a chip assembly region and electronic element region. (b) Taking advantage of multi-electronic elements on the electronic element region to electrically connect each one of the electronic element with module circuit. (c) The module circuit is segmented separately from the circuit board as a single module circuit unit. (d) At least an IC circuit chip will to this chip's region to electrically connect this chip and its module circuit. (e) Testing the module circuit unit. (f) Encapsulating the chip of module circuit unit.