Patent DE-102009011696-A1 (DE)
Title: Forming gradient layer containing two components on substrate by simultaneously evaporating evaporation materials in process chamber, comprises arranging the materials in individual vapor sources and arranging vapor sources in the chamber
Inventor: FABER JOERG
IPC: C23C14/56
Filed: 2009-03-09
Abstract: The method for forming a gradient layer consisting of two components on a substrate (310) by simultaneously evaporating two evaporation materials in a process chamber, where the substrate is continuously moved through the process chamber in a transport direction and the evaporation materials are arranged one after the other in the transport direction, comprises arranging the evaporation materials in individual vapor sources (330, 340) and arranging the vapor sources in the process chamber in a manner, so that they are positioned relative to each other in the substrate transport direction. The method for forming a gradient layer consisting of two components on a substrate (310) by simultaneously evaporating two evaporation materials in a process chamber, where the substrate is continuously moved through the process chamber in a transport direction and the evaporation materials are arranged one after the other in the transport direction, comprises arranging the evaporation materials in individual vapor sources (330, 340) and arranging the vapor sources in the process chamber in a manner, so that they are positioned relative to each other in the transport direction of the substrate and are positioned independent of each other in their distance to the substrate, arranging a vertical separating wall (350) between the vapor sources and transverse to the transport direction of the substrate, where the separating wall is adapted to the substrate width, limiting the extension of the steam flow of the two vapor sources in the direction to the substrate and mixing of vapor sources by adjusting the height of the separating wall, arranging a horizontal inlet orifice (320A) and a horizontal outlet orifice (320B) below the continuous substrate and parallel to the substrate and fixing a vaporizing zone by positioning the orifices relative to each other and to the process chamber, fixing the concentration ratios of the components to begin and end the vaporization by positioning the inlet orifice, the outlet orifice and the separating wall in relation to each other and in relation to the vapor sources and the substrate and by adjusting the vaporizing ratios of both components. Each vapor source consists of individual sources, which are juxtaposingly arranged transverse to the transport direction of the substrate. The evaporation takes place thermally. The evaporation of one component takes place using electron beam. The first evaporation material is metal (M) and the second evaporation material is ceramic or oxide (C). The substrate initially passes the part of the vapor mixture cloud dominated by the metal. The evaporation of the metal component plasma actively takes place. A reactive gas is introduced in the area dominated by the oxide component. The outlet orifice, the inlet orifice and the separating wall are positioned in relation to each other and in relation to the vapor sources and the substrate, so that a layer is temporally deposited in an area directly subsequent to the inlet orifice before the gradient layer, where the layer consists of the first component forming the gradient layer and so that a further layer is temporally deposited in an area directly preceding to the outlet orifice after the gradient layer, where the further layer consists of the second component forming the gradient layer. Independent claims are included for: (1) a method for forming a solar absorber layer system on a substrate; and (2) a device for forming a gradient layer consisting of two components on a substrate.