baber/WOPTO huggingface dataset:
Patent TW-392251-B (TW)
Title: Low temperature process to avoid device defect
Inventor: YOU TSUEI-RUNG
IPC: H01L21/322
Filed: 1998-12-31
Granted: 2000-06-01
Abstract: A low temperature process that avoids device defect is based on the application of the cooling system of the substrate backside. The substrate temperature is controlled approximately in the range between room temperature and liquid nitrogen temperature, thereby decreasing the damage to the substrate during the manufacturing process. Additionally, the generation of device defect in the subsequent annealing process can be avoided. This low temperature process can be used in plasma sputtering process, ion implantation process and so on.
Patent TW-404046-B (TW)
Title: Improved controllability of a buried device layer
Inventor: BERGNER WOLFGANG
IPC: H01L27/108
Filed: 1999-03-09
Granted: 2000-09-01
Abstract: Reduced variations in buried layer across the chip is provided. The reduction in variation is achieved by defining the top surface of the buried layer and then the lower surface of the buried layer. This results in improved control buried strap variations, thereby improving performance of the IC.
Patent TW-447085-B (TW)
Title: Manufacturing method for thin-film dielectric layer of DRAM capacitor
Inventor: HUANG GUO-TAI
IPC: H01L21/8242
Filed: 1999-03-12
Granted: 2001-07-21
Abstract: There is provided a manufacturing method for thin-film dielectric layer of DRAM capacitor applied in the first electrode of a capacitor. The first electrode is made of polysilicon and has a native oxide layer on its surface. The method comprises the steps of: removing the native oxide layer and performing a first nitrifying reaction on the surface of the first electrode to form a dielectric layer; forming a silicon nitride layer on the dielectric layer and performing a second nitrifying reaction on the silicon nitride layer, wherein the second nitrifying reaction is processed by executing a rapid thermal process under NH3 or N2, or using N2 plasma, thereby completing the manufacture of thin-film dielectric layer.
Patent TW-457267-B (TW)
Title: Compositions comprising chlorine-containing polymers and cyanoacetylureas and method for stabilizing chlorine-containing polymers
Inventor: FRIEDRICH HANS-HELMUT
IPC: C08K5/405
Filed: 1999-03-30
Granted: 2001-10-01
Abstract: A description is given of compositions comprising a chlorine-containing polymer and at least one compound of the general formula I, where X is oxygen or sulfur, and R is C2-C22-acyloxyalkyl or C1-C12-alkyl which may be interrupted by 1 to 3 oxygen atoms and/or substituted by 1 to 3 OH groups, or is C3-C8-alkenyl, C7-C10-phenylalkyl, C5-C8-cycloalkyl, C7-C10-alkylphenyl, phenyl or naphthyl, where the aromatic radical in each case may be substituted by -OH, C1-C12-alkyl and/or OC1-C4-alkyl, and R1 is hydrogen or is as defined for R.
Patent TW-449476-B (TW)
Title: Anticonvulsive and antiallergic/antiasthmatic pyrazolo-[3,4-d]pyrimidines having affinity for the adenosine receptor, and process for their preparation
Inventor: ARNOLD THOMAS
IPC: A61K31/505
Filed: 1999-06-17
Granted: 2001-08-11
Abstract: The invention relates to pyrazolo [3,4-d] pyrimidin-4(5H)-ones and pyrazolo [3,4-d] pyrimidine-4(5H)-thiones and their tautomers which contain a benzyl radical in the 2-position, processes for their preparation and their use as medicaments, in particular for the treatment of epilepsies of various forms and of allergic/asthmatic diseases.
Patent TW-531732-B (TW)
Title: Display panel and display method therefor
Inventor: OHASHI KYOSUKE
IPC: H05B44/00
Filed: 1999-08-23
Granted: 2003-05-11
Abstract: The present invention discloses a display panel and display method therefor, in which the picture displayed by illuminating the current drive type light emitting device consists of plural pixels from which area differs. The area of each pixel is set as the integral multiple on the basis of the area defined beforehand. By passing the constant current of the same size as each pixel in time which is proportional to each area of each pixel in one period by duty control, and making this pixel emit light periodically, it is able to make each pixel emit light with the same brightness. As a result, the displayed image is clear.
Patent TW-I243167-B (TW)
Title: Process for preparing a product comprising 2-(2,4-dihydroxyphenyl)-4,6-bisaryl-1,3,5-triazines
Inventor: GUPTA RAM B
IPC: C07B61/00
Filed: 1999-09-03
Granted: 2005-11-11
Abstract: Provided is a new process for preparation of products containing at least one triazine ultraviolet light absorber.
Patent TW-498060-B (TW)
Title: Substituted ethylene precursor and synthesis method
Inventor: ZHUANG WEI-WEI
IPC: C07F1/08
Filed: 1999-09-03
Granted: 2002-08-11
Abstract: A Cu(hfac) precursor with a substituted ethylene ligand has been provided. The substituted ethylene ligand includes bonds to molecules selected from the group consisting of C1 to C8 alkyl, C1 to C8 haloalkyl, H, and C1 to C8 alkoxyl. One variation, the 2-methyl-1-butene ligand precursor has proved to be stable at room temperature, and extremely volatile at higher temperatures. Copper deposited with this precursor has low resistivity and high adhesive characteristics. Because of the volatility, the deposition rate of copper deposited with this precursor is very high. A synthesis method has been provided which produces a high yield of the above-described precursor.
Patent TW-428182-B (TW)
Title: A transformer with a high coupling efficiency
Inventor: JIANG SHENG-LUNG
IPC: H01F27/02
Filed: 1999-11-03
Granted: 2001-04-01
Abstract: The present invention provides a transformer with a high coupling efficiency, which includes a base board, a bobbin and a conducting wire device. The base board is defined to have a front side and a back side which comprises a plurality of pads and a plurality of lower conducting wires. Each pad is installed on the base board to serve as the electrical interconnecting point on the front side and back side. Every lower conducting wire is installed on the backside of the base board to electrically connect two corresponding pads. The bobbin is installed on the base board as the bobbin of the high-voltage conducting wire. The conducting wire device is installed on the bobbin, which comprises a plurality of upper conducting wires, each conducting wire is installed on the conducting wire device to electrically connect two corresponding pads on the base board, wherein the plurality of upper conducting wires connect electrically with the plurality of lower conducting wires via a plurality of pads and forms a low voltage winding circuit on the conducting wire device and the back side of the base board.
Patent TW-431996-B (TW)
Title: Case
Inventor: MITSUYAMA MASUHIRO
IPC: E05B73/00
Filed: 1999-11-09
Granted: 2001-05-01
Abstract: This invention discloses an anti-theft container for receiving an article comprising a casing 2 with an opening at a lateral side thereof to access the article, a cover 4 provided at a lower edge of the case and being freely opened and closed through a hinge so as to form a case A, and a slidable member B for engagement with a locking slit 9 aligned with and provided at an upper edge of the cover of the case to hold the container in a closed condition. The slidable member B may bear an anti-theft tag and may have a V-shaped leading portion to facilitate penetration of a packaging film of the container to engage the flanges 10. Release of the slidable member is effected by insertion of a separate unlocking piece.
Patent TW-589416-B (TW)
Title: Method for producing silicon wafer and silicon wafer
Inventor: KOBAYASHI NORIHIRO
IPC: C30B33/00
Filed: 1999-12-04
Granted: 2004-06-01
Abstract: The present invention provides a method for producing a silicon wafer characterized in that at least one surface of the wafer is subjected to a multi-step polishing process, in which a heat treatment in a mixed gas atmosphere of hydrogen and argon through use of a rapid heating/rapid cooling apparatus is substituted for a final polishing in the multi-step polishing process, and a silicon wafer produced by the method. Thereby, there can be provided a silicon wafer in high productivity wherein there is neither mechanical damages nor scratches on the surface of the wafer, surface roughness is significantly improved, and there is no slip dislocation.
Patent TW-468123-B (TW)
Title: Method and apparatus for automatic gas pump charging cost of gasoline to auto computer using pan technology
Inventor: BERSTIS VIKTORS
IPC: G07F7/08
Filed: 1999-12-23
Granted: 2001-12-11
Abstract: A vehicle processes a commodity transaction between a vendor computer system and an onboard computer system where the transaction data is stored available to the vendor computer with little interaction required by the vehicle operator. The onboard computer system communicates to the vendor computer system using personal area network technology adapted to a vehicle. In that way, the user initiates the sequence of events by performing a related function. In the preferred embodiment, the operator connects a fuel nozzle to the vehicle. Then, the transaction may be performed between the vehicle computer and the vendor computer without any assistance from the operator. The transaction may include selecting a commodity or service, debiting a cash account for the selected commodity and enacting a fault sequence in case of a system fault. The transaction accounts can be specific to the vehicle identification or the operator identification.
Patent TW-419355-B (TW)
Title: Rolling pin
Inventor: GIBRAN KAHLIL
IPC: A21C3/02
Filed: 2000-02-03
Granted: 2001-01-21
Abstract: A rolling pin includes a cylindrical working barrel with oppositely extending handles. The handles are contoured with strategically shaped surfaces and indentations configured to comfortably accommodate the shape of the user's hands, thereby alleviating stress and fatigue during protracted use.
Patent TW-463340-B (TW)
Title: Method to accurately define the decapsulated area of plastic package
Inventor: YE MIN-SHIA
IPC: H01L23/28
Filed: 2000-02-19
Granted: 2001-11-11
Abstract: A method to accurately define the decapsulated area of plastic package is disclosed, wherein a mask with a size larger than that of the plastic package is pasted on the surface of the plastic package. Next, the decapsulated area is defined in this mask according to the size and position of the semiconductor chip of the plastic package. Then this plastic package is heated to a specific temperature, and the etching liquid is dropped on the decapsulated area of this plastic package manually, or the etching liquid with a specific temperature is dropped on the decapsulated area of this plastic package in an automatic transportation manner to remove the sealed cap portion of the decapsulated area and expose the semiconductor chip. Then the semiconductor chip is cleaned.
Patent TW-466623-B (TW)
Title: Substrate treatment device and method
Inventor: MORITA FUMIO
IPC: H01L21/304
Filed: 2000-03-06
Granted: 2001-12-01
Abstract: The present invention relates to a substrate treatment device (e.g. a vane type substrate washing device for wafer cleaning) and method, wherein the substrate treatment device has a recovery means for recovering the substrate treatment fluid such as substrate washing solution and so on, especially relates to a substrate treatment device and method that can greatly improve the recovery rate of the substrate treatment fluid. The objective of the present invention is to obtain the substrate treatment device on which the substrate treatment fluid can be recovered efficiently and treatment defect, such as washing speckles and water marks, for example, by the adhesion of treatment fluid after treatment of substrate, is not generated. In this substrate treatment device wherein substrate treatment fluid is introduced into the gap S between a fixed upper plate (1) and a fixed lower plate (2), and a substrate (6) is treated by rotating the substrate (6) retained in the gap S, the exhaust path (8) of the substrate treatment fluid is formed between the outer circumferential side face (36a) of outer frame, which is the outer wall of a supporting part of a rotating substrate 6, and the inside surface (5a) of the housing (5) which is provided covering the side face (36a). A rotating vane (15), to be used to enhance the discharge action of substrate treatment fluid of the exhaust path (8), is provided on the outer frame outer circumferential wall surface (36a), and a static vane (16), to be used to enhance the discharge action of the substrate treatment fluid with the coaction of the rotating vane (15), is provided on the inside of surface (5a) of the housing.
Patent TW-466464-B (TW)
Title: Flat panel display
Inventor: NITTA HIDETO
IPC: H01J11/44
Filed: 2000-03-17
Granted: 2001-12-01
Abstract: A PDP flat panel display includes a front glass plate and a rear glass plate bonded to each other to form a number of display cells therebetween in a display area. Scan electrodes and sustain electrodes are formed on an inner, namely, rear surface of the front glass plate, and data electrodes are formed on an inner, namely, front surface of the rear glass plate. The rear glass plate includes an extension extending beyond the front glass plate, in an extending direction of the data electrodes. A heat dissipating conductor film is integrally formed on an inner, namely, front surface of the extension of the rear glass plate, and an integrated circuit chip of a driver integrated circuit for supplying a required voltage to the data electrodes is heat-conductively bonded on the heat dissipating conductor film.
Patent TW-I229078-B (TW)
Title: Glucokinase activators
Inventor: BIZZARRO FRED THOMAS
IPC: A61K31/505
Filed: 2000-03-28
Granted: 2005-03-11
Abstract: The present invention relates to compounds of the formula I, wherein R1, R2, R3 and R4 are as defined in claim 1 and pharmaceutically acceptable salts thereof. The compounds are glucokinase activators which increase insulin secretion in the treatment of type II diabetes.
Patent TW-515873-B (TW)
Title: Ceramic bearing ball
Inventor: NIWA TOMONORI
IPC: F16C33/32
Filed: 2000-04-10
Granted: 2003-01-01
Abstract: A ceramic bearing ball capable of preventing irregular vibrations of, for example, a hard disk drive and having a high accuracy. The ceramic ball is characterized as having a sphericity of not more than 0.08 μm, a surface roughness of not more than 0.012 μm and a maximum surface pore size of 5 μm.
Patent TW-500744-B (TW)
Title: A process for preparing a stable, creamy gel composition suitable for use in cosmetics
Inventor: FRY BRYAN E
IPC: A61Q1/12
Filed: 2000-05-18
Granted: 2002-09-01
Abstract: Soft, creamy translucent and transparent gels suitable for use in cosmetic applications may be prepared by hydrosilylating an unsaturated MQ resin or its equivalent with an Si-H functional organopolysiloxane cross-linker having Si-H functionality along its polysiloxane backbone, in the presence of a low viscosity and preferably volatile organopolysiloxanes. The stable gels obtained may be converted to creamy gels of a wide range of consistency by simple shearing. Gel firmness can be maintained through addition of a catalyst inhibitor to the gel formulation.
Patent TW-460930-B (TW)
Title: Composite iridium-metal-oxygen barrier structure with refractory metal companion barrier and method for same
Inventor: ZHANG FENGYAN
IPC: H01L21/822
Filed: 2000-05-20
Granted: 2001-10-21
Abstract: An Ir-M-O composite film has been provided that is useful in forming an electrode of a ferroelectric capacitor, where M includes a variety of refractory metals. The Ir combination film is resistant to high temperature annealing in oxygen environments. When used with an underlying barrier layer made from the same variety of M transition metals, the resulting conductive barrier also suppresses to diffusion of Ir into any underlying Si substrates. As a result, Ir silicide products are not formed, which degrade the electrode interface characteristics. That is, the Ir combination film remains conductive, not peeling or forming hillocks, during high temperature annealing process, even in oxygen. The Ir-M-O conductive electrode/barrier structures are useful in nonvolatile FeRAM devices, DRAMs, capacitors, pyroelectric infrared sensors, optical displays, optical switches, piezoelectric transducers, and surface acoustic wave devices. A method for forming an Ir-M-O composite film barrier layer and an Ir-M-O composite film ferroelectric electrode are also provided.
Patent TW-558793-B (TW)
Title: Fabrication method of shallow trench isolation
Inventor: WANG YING-BIN
IPC: H01L21/76
Filed: 2000-07-13
Granted: 2003-10-21
Abstract: A kind of fabrication method of shallow trench isolation (STI) is provided. A pad oxide layer and a mask layer are formed on a substrate. A portion of the mask layer, the pad oxide layer and the substrate are removed to form a trench. A liner oxide layer is formed by oxidizing the substrate in the trench. The liner layer at the bottom of the trench is removed to expose the substrate at the bottom of the trench. A polysilicon layer is deposited globally onto the mask layer and used to fill the trench. A portion of the polysilicon layer on top of the mask layer and in the trench is removed to allow the remaining polysilicon forming a polysilicon plug in the trench. A thin, conformal barrier layer is then deposited globally and an insulation material layer is deposited onto the barrier layer. The insulation material and the barrier layer on top of the mask layer and outside of the trench is removed by chemical mechanical polishing (CMP), which is followed by stripping off the mask layer to complete the STI fabrication.
Patent TW-457567-B (TW)
Title: Manufacturing method for gate oxide layer
Inventor: TZENG MAU-SUNG
IPC: H01L29/78
Filed: 2000-07-17
Granted: 2001-10-01
Abstract: A method for manufacturing the gate oxide of a trench power MOSFET is disclosed. The method comprises providing a silicon substrate, forming a mask layer over the substrate, removing a part of the mask layer to expose a part of the substrate, forming a trench in the exposed part of the substrate, removing the mask layer to expose the substrate and the trench, forming a sacrificial oxide layer with a thickness of 1000-1500 Å on the silicon substrate and on the sidewall and the bottom of the trench by using thermal oxidation at 1150-1300 DEG C for 20-60 minutes, removing the sacrificial layer to expose the substrate and the trench, and forming a gate oxide layer on the silicon substrate and on the sidewall and the bottom of the trench for finishing the present invention.
Patent TW-498589-B (TW)
Title: Internal stator part for direct driving of wheel hub motor
Inventor: SHIU JIUN-FU
IPC: H02K1/12
Filed: 2000-08-11
Granted: 2002-08-11
Abstract: The present invention relates to a type of internal stator part for direct driving of wheel hub motor to overcome the complexity and the inconvenience in the connection and the installation of conventional motor and drive control circuit. Furthermore, since a built-in drive control circuit is built in the stator part, the stator coil of the present invention has the shortest lead wire. The present invention also has other advantages, such as lowest linear impedance and low circuit interference. An internal hole having a maximum cavity is made on the internal track ring part of the internal stator. Two cover plates are applied together to cover both sides of the internal track ring part. A wheel hub motor can be installed in the covered track ring part having a cavity. A concentric aperture is made at the center of each cover plate for tight connection with a supporting axle having at least one through hole. Drive control signal lines are installed through the through holes for the connection control of the motor's internal and external control signals.
Patent TW-502354-B (TW)
Title: Inspection device for semiconductor
Inventor: KANAMARU MASATOSHI
IPC: G01R31/02
Filed: 2000-08-18
Granted: 2002-09-11
Abstract: The present invention relates to a testing method for semiconductor components or semiconductor devices, and particularly to an inspection method for the electrical characteristics of semiconductor components in semiconductor processing by efficiently checking the probe inspection and burn-in test in wafer state to achieve highly reliable and high yield semiconductor devices, and also for the electrical characteristics of the semiconductor device. In the conventional inspection device for semiconductor components, a lot of work is required to position precisely and fixed the individual probes, so that the number of electrode pads and the number of chips to be inspected in one time are limited. Thus, the present invention is to directly contact the plurality of electrode pads for the semiconductor components to be inspected with the plurality of probes of the first substrate formed by silicon configured on the electrically connected substrate of the inspection device, and provides the device for semiconductor component inspection during being electrically connected. The structure of the present invention is that the probe formed on the first substrate is formed on the beam supported on one side, and the wiring is formed as continuously connected until the electrode pad on the surface opposite to the forming surface of the probe from the probe tip to the front end of the single-side-supported beam.
Patent TW-510064-B (TW)
Title: Binder composition for the electrodes of lithium secondary battery comprised a polymer having a structural unit come from 1,3-butylene and the use thereof
Inventor: KANZAKI ATSUHIRO
IPC: H01M10/05
Filed: 2000-08-31
Granted: 2002-11-11
Abstract: Provided is a binder for the electrodes of lithium secondary battery which has an excellent charge-recharge property at low and high temperatures. A binder for the electrodes of lithium secondary battery is characterized in that it contains a polymer having a structural unit come from 1,3-butylene, and in the binder the polymer contains 2 to 25 mol% of 1,2-vinyl structure unit.
Patent TW-550432-B (TW)
Title: Low drive voltage optical modulator
Inventor: HO SENG-TIONG
IPC: G02F1/025
Filed: 2000-09-08
Granted: 2003-09-01
Abstract: An optical modulator that includes a resonator near one arm of a Mach-Zehnder interferometer and that increases the optical length of that arm so as to introduce a phase-shift in an optical signal propagating in that arm when compared to an optical signal propagating in the other arm of the interferometer. The resonator also increases the electro-optic interaction between an electrical signal (i.e., the source of information in a modulated signal) and the optical devices (e.g., waveguides). A modulator constructed in accordance with the present invention is thus physically small than prior art modulators and requires a significantly reduced drive voltage to impart information on an optical signal.
Patent TW-477123-B (TW)
Title: Optoelectronic transceiver
Inventor: LUO WEI-REN
IPC: H04B10/40
Filed: 2000-09-15
Granted: 2002-02-21
Abstract: The present invention discloses an optoelectronic transceiver, which at least comprises a first circuit board, a transmission device, a receiving device and a housing, wherein the transmission device is mainly a laser diode, the receiving device is mainly a photodiode, the laser diode and the photodiode are wrapped with an alignment sleeve. For the laser diode, the first curved surface of the alignment sleeve makes the laser light propagates in parallel without diverging in the sleeve, the second curved surface of the alignment sleeve makes the laser light be projected in focus, the housing wraps the first circuit board, the transmission device and the receiving device.