baber/WOPTO huggingface dataset:
Patent TW-I246721-B (TW)
Title: Metal gate stack with etch stop layer having implanted metal species
Inventor: BESSER PAUL R
IPC: H01L29/78
Filed: 2002-02-27
Granted: 2006-01-01
Abstract: A metal gate structure and method of forming the same introduces metal impurities into a first metal layer, made of TiN, for example. The impurities create a surface region of greater etch selectivity that prevents overetching of the TiN during the etching of an overlying tungsten gate during the formation of the metal gate structure. The prevention of the overetching of the TiN protects the gate oxide from undesirable degradation. The provision of aluminum or tantalum as the metal impurities provides adequate etch stopping capability and does not undesirably affect the work function of the TiN.
Patent TW-555954-B (TW)
Title: Confocal microscope, optical height-measurement method, automatic focusing method
Inventor: EDA YUKIO
IPC: G01B11/06
Filed: 2002-02-27
Granted: 2003-10-01
Abstract: A confocal microscope is disclosed, which comprises a means for scanning a light from a light source passed through a confocal pattern on a specimen through an objective lens; a confocal optical system for focusing the light from the specimen passed through the said confocal pattern through the objective lens on an electro-optic converting means to obtain a confocal image; and a variable restrictor disposed at an eye position of the objective lens or at a position conjugated with the eye position of the objective lens between the light source and the objective lens and allowing a variable cross section effect in the direction of optical axis.
Patent TW-546819-B (TW)
Title: Semiconductor device, manufacturing method thereof, and monolithic microwave integrated circuit
Inventor: TAKAHASHI NAOKI
IPC: H01L23/48
Filed: 2002-05-30
Granted: 2003-08-11
Abstract: An amplifier GaAs MMIC for microwave band applications includes a ground electrode 8 having a via hole group 12 composed of three via holes 11 filled with plated metals 10a that are formed adjacently. The interaction thereby generates high frequency electromagnetic bonding, which reduces the ground inductance. According to the MMIC, the ground inductance of the via hole may be reduced while decrease of a strength and increase of a size being restrained.
Patent TW-I248340-B (TW)
Title: Attachment mechanism
Inventor: BRUNSWICK BRIAN A
IPC: B01F15/00
Filed: 2002-05-30
Granted: 2006-02-01
Abstract: A mixing element for attachment to an output shaft of a mixer, the mixing element including a body having a mixing portion and a collar portion having an opening formed therein, the opening being shaped and located to receive the output shaft of a mixer therein. The mixing element further includes a retainer coupled to the body, the retainer being movable between an engaged position wherein at least part of the retainer protrudes into the opening and a disengaged position wherein the retainer does not protrude into the opening.
Patent TW-I239726-B (TW)
Title: Frequency synchronization architecture for single carrier and multi-carrier QAM system
Inventor: CHEN CHI-CHANG
IPC: H04J11/00
Filed: 2002-06-05
Granted: 2005-09-11
Abstract: The present invention provides a frequency synchronization architecture for single carrier and multi-carrier QAM system. In the frequency synchronization for multi-carrier QAM, one or more sub-channels are used as the pilot sub-carriers, and one pilot sub-carrier is used as a QAM to perform frequency synchronization. By detecting the frequency offset in the pilot sub-carrier, it is able to achieve the frequency synchronization to the whole multi-carrier QAM system.
Patent TW-557421-B (TW)
Title: Aligner
Inventor: ASAMI MASATOSHI
IPC: H05K3/00
Filed: 2002-06-21
Granted: 2003-10-11
Abstract: An aligner which enables a uniform close contact between a photo mask and a printed circuit board is provided. The aligner includes: a photo mask (20) provided with tapered portions (21); a mask holder (2) for supporting the photo mask (20) at the tapered portions; a copy frame (1) for supporting the mask holder (2); a load regulating system (3); and a Z-axis moving system (8) having supporting arms (80) on which the mask holder (2) is placed through the load regulating system (3); and a guide system (4) having a guide shaft (40), so that the photo mask (20) can be moved relative to a printed circuit board (B) while maintaining the position in X and Y directions by the guidance of the guide system (4). The photo mask (20) closely contacts with a printed circuit board (B) by a tare weight of the copy frame (1), mask holder (2), and the photo mask (20), and the contact pressure is regulated by the load regulating system (3). The copy frame (1) can be manipulated on a slant with respect to the guide shaft (40) of the guide system (4), whereby the contact uniformity between the photo mask (20) and printed circuit board (B) is improved.
Patent TW-558928-B (TW)
Title: Bonding pads of printed circuit board capable of holding solder balls securely
Inventor: DAN WEI-HENG
IPC: H05K3/34
Filed: 2002-07-25
Granted: 2003-10-21
Abstract: The present invention is to provide a printed circuit board, which comprises a substrate, a conductive pattern disposed on a surface of said substrate and a solder mask coated on the surface of said substrate and covered over the conductive pattern. The conductive pattern has a bonding pad. The solder mask has an opening corresponding in location to the bonding pad such that a portion of the bonding pad is exposed outside. A space is left between said solder mask and said bonding pad and is communicated with the opening. Whereby, a solder ball can be received in the opening and the space and electrically connected to the bonding pad, such that the solder ball is held on the printed circuit board securely.
Patent TW-I221253-B (TW)
Title: Automatic software input panel selection based on application program state
Inventor: ANDREW FELIX G
IPC: G06F3/0488
Filed: 2002-10-07
Granted: 2004-09-21
Abstract: A method and system for automatically selecting a software input method and/or adjusting the keys displayed on a software input panel of a software input method based on the state of an application program, such as corresponding to the currently focused field in which data is to be entered. An application communicates with a software input method manager to provide the software input method manager with information related to a desired input method, or the manager otherwise obtains the state information. Based on the state, an input paned is displayed that automatically changes its keyboard layout paned is displayed that automatically changes its keyboard layout and key meanings based on what the user is likely to need, thereby increasing convenience and/or usability of the input system. The keys' appearances and/or their underlying meanings can be dynamically configured based on previously-entered user data, such as maintained and sent by the application program or maintained by the software input method manager.
Patent TW-I250230-B (TW)
Title: Intermittent feeding technique for increasing the melting rate of polycrystalline silicon
Inventor: HOLDER JOHN D
IPC: C30B15/00
Filed: 2002-11-15
Granted: 2006-03-01
Abstract: A process for preparing a silicon melt in a crucible for use in growing a single crystal silicon ingot by the Czochralski method. The crucible is first loaded with chunk polycrystalline silicon and heated to partially melt the load. Granular polycrystalline silicon is then fed onto the exposed unmelted chunk polycrystalline silicon to complete the charge of silicon in the crucible. The granular polycrystalline silicon is intermittently delivered using a plurality of alternating on-periods and off-periods. During each on-period, granular polycrystalline silicon is flowed through a feed device that directs the granular polycrystalline silicon onto the unmelted chunk polycrystalline silicon. During each off-period, the flow of the granular polycrystalline silicon is interrupted. The loaded chunk polycrystalline silicon and the fed granular polycrystalline silicon are melted to form the silicon melt.
Patent TW-I226139-B (TW)
Title: Method to manufacture a semiconductor-component
Inventor: PLOESSL ANDREAS
IPC: B23K26/40
Filed: 2003-01-29
Granted: 2005-01-01
Abstract: This invention describes a method to manufacture a semiconductor-component, especially a thin-layer-component, where a semiconductor-layer is separated from a substrate through the irradiation with a laser-beam, which has a plateau-shaped spacial radiation-profile. In addition, the semiconductor-layer is before the separation applied on a carrier with an adapted thermal expansion-coefficient. This invention is especially suitable for semiconductor layers, which contain a nitride-compound-semiconductor.
Patent TW-582092-B (TW)
Title: Damascene interconnect with bilayer capping film
Inventor: CHEN JEI-MING
IPC: H01L21/768
Filed: 2003-01-29
Granted: 2004-04-01
Abstract: A damascene interconnect structure with a bi-layer capping film is provided. The damascene interconnect structure comprises a semiconductor layer and a dielectric layer disposed on the semiconductor layer. The dielectric layer has a main surface and at least one damascened recess provided on the main surface. A copper wire is embedded in the damascened recess. The copper wire has a chemical mechanical polished upper surface, which is substantially co-planar with the main surface of the dielectric layer. After polishing the upper surface of the copper wire, the upper surface is pre-treated and reduced in a conductive plasma environment at a temperature of below 300 DEG C. A bi-layer capping film is thereafter disposed on the upper surface of the copper wire. The bi-layer capping film consists of a lower HDPCVD silicon nitride layer and an upper doped silicon carbide layer.
Patent TW-591590-B (TW)
Title: Black image insertion method and apparatus for display
Inventor: SHIH PO-SHENG
IPC: G02F1/133
Filed: 2003-04-17
Granted: 2004-06-11
Abstract: Black image insertion method and apparatus for display are provided. A black image transistor and a black image line are adding into liquid pixel circuit to control the insertion of black images. Moreover, a gate driver IC that can send two periodic pulses is used to switch the switching transistor and black image transistor, and there is a time offset between the two periodic pulses.
Patent TW-I272697-B (TW)
Title: Semiconductor device and its manufacturing method
Inventor: TSUJIKAWA SHINPEI
IPC: H01L21/316
Filed: 2003-05-07
Granted: 2007-02-01
Abstract: A kind of semiconductor device and its manufacturing method are provided in the present invention, in which the silicon nitride film is selectively formed on the silicon substrate surface by means of the manner that no damage and contamination are generated so as to form different kinds of plural gate insulation films on the same silicon substrate. A silicon oxide film is formed on a silicon substrate and is followed by removing one part of the silicon oxide film. A silicon nitride film is then formed on the substrate surface where the silicon oxide film is removed; and nitrogen is introduced onto the remained silicon oxide film surface. In addition, by using chemical vapor phase deposition method, a silicon oxide film is stacked on the silicon substrate surface, and is followed by removing one part of the silicon oxide film. After that, a silicon nitride film is formed on the substrate surface where the silicon oxide film is removed. Then, nitrogen is introduced onto the remained silicon oxide film surface. The silicon oxide film where nitrogen is introduced is dissolved and removed so as to expose the substrate surface. After that, the exposed silicon substrate surface and the silicon nitride film are oxidized.
Patent TW-I262934-B (TW)
Title: Chitosan membrane containing nano-inorganic particles and the method for forming the same
Inventor: LAI JUIN-YIH
IPC: C08L5/00
Filed: 2003-05-13
Granted: 2006-10-01
Abstract: A chitosan membrane containing nanosize particles is disclosed in this invention. The chitosan membrane comprises a chitosan membrane and nano-inorganic particles. The nano-inorganic particles are uniformly embedded in the chitosan membrane. This invention also discloses a method for forming a chitosan membrane containing nanosize particles. The method comprises a grinding process, a dissolution process, a dispersion process, a blending process, an impurity removing process, a degassing process, a casting process, and a fixation process.
Patent TW-594928-B (TW)
Title: Method of designing interconnects
Inventor: YOKOGAWA SHINJI
IPC: G06F17/50
Filed: 2003-05-23
Granted: 2004-06-21
Abstract: An interconnect of a semiconductor device having a multilayer interconnect structure is designed by predicting the life of the interconnect governed by an electromigration with different predicting models that are classified according to a void incubation period and a void growth period of a void that occurs in the vicinity of a junction between the interconnect and a via which connects upper and lower interconnect, and designing the interconnect based on the predicted life. The different predicting models are classified according to whether the interconnect with the void is positioned above or below the via.
Patent TW-I286954-B (TW)
Title: Steel socket-head bolt
Inventor: VIRGL ALAIN
IPC: F16B35/00
Filed: 2003-07-04
Granted: 2007-09-21
Abstract: The invention relates to a socket-head bolt produced by simple successive cold-working operations using a steel having a carbon concentration of between 0.15 and 0.25%.
Patent TW-I323005-B (TW)
Title: Mbe growth of an algan layer or algan multilayer structure
Inventor: VALERIE BOUSQUET
IPC: H01L33/00
Filed: 2003-08-20
Granted: 2010-04-01
Abstract: A method of growing an AlGaN semiconductor layer structure by Molecular Beam Epitaxy comprises supplying ammonia, gallium and aluminum to a growth chamber thereby to grow a first (Al,Ga)N layer by MBE over a substrate disposed in the growth chamber. The first (Al,Ga)N layer has a non-zero aluminum mole fraction. Ammonia is supplied at a beam equivalent pressure of at least 1 10-4 mbar, gallium is supplied at a beam equivalent pressure of at least 1 10-8 mbar and aluminum is supplied at a beam equivalent pressure of at least 1 10-8 mbar during the growth step. Once the first (Al,Ga)N layer has been grown, varying the supply rate of gallium and/or aluminum enables a second (Al,Ga)N layer, having a different aluminum mole fraction from the first (Al,Ga)N layer to be grown by MBE over the first (Al,Ga)N layer. This process may be repeated to grown an (Al,Ga)N multilayer structure.
Patent TW-I246214-B (TW)
Title: Negative electrode, cell, and their manufacturing methods
Inventor: FUJINO TAKEMASA
IPC: H01M4/62
Filed: 2003-10-08
Granted: 2005-12-21
Abstract: A negative electrode, a cell, and their manufacturing methods enabling a high capacity and an improved charging/discharging cycle characteristic are provided. A negative electrode active material layer (12) contains a granular negative active material (12A) comprising a simple substance of an element that can be alloyed with Li or a compound, a granular binder (12B) comprising a copolymer of vinylidene fluoride or a polyvinylidene fluoride, and a conductive agent (12C). The negative active material layer (12) is prepared by using a dispersion medium having a swell of 10% or less with respect to the binder (12B), specifically pure water. The granular binder (12B) acts as a cushion to absorb the swell and shrinkage of the negative active material (12A) caused by charging/discharging, thereby preventing the deterioration of the electron conductivity attributed to cracking or separation. Since the negative active material (12A) is not covered with the binder (12B), the electrode reaction takes place well.
Patent TW-I220796-B (TW)
Title: Thin film transistor array panel and method for making the same
Inventor: CHANG SHIH-CHANG
IPC: H01L29/786
Filed: 2003-10-16
Granted: 2004-09-01
Abstract: A thin film transistor array panel comprises thin film transistors; a color filter array layer formed over the thin film transistors and exposes a predetermined region for forming contact; a overcoat layer formed over the color filter array layer covering the thin film transistors; pixel electrodes formed on the overcoat layer and located corresponding to the thin film transistors; and contacts formed in the overcoat layer in the predetermined region, wherein the pixel electrodes and thin film transistors are electrically connected together through the contacts. Since the contacts are formed in the overcoat layer but not in the color filter array layer, the contact dimension can be reduced.
Patent TW-I230559-B (TW)
Title: Organic electroluminescent device, method for manufacturing the organic electroluminescent device, and organic electroluminescent display apparatus
Inventor: MURAYAMA KOHJI
IPC: H05B33/00
Filed: 2003-10-20
Granted: 2005-04-01
Abstract: An organic EL device of the present invention includes: a substrate; electrodes including a first electrode formed adjacently to the substrate, and a second electrode disposed to be spaced from the first electrode, a function layer formed between the electrodes and including a luminous layer, and a buffer layer including in the second electrode and disposed to be spaced from the function layer 16, in which occurrence of dark spots is minimized. Moreover, the present invention provides a method for manufacturing the organic EL device and an organic EL display apparatus.
Patent TW-I234190-B (TW)
Title: Method for forming fine patterns
Inventor: SUGETA YOSHIKI
IPC: H01L21/027
Filed: 2003-10-24
Granted: 2005-06-11
Abstract: A kind of method for forming a fine pattern is disclosed in the present invention. The invention is featured with containing the followings: hydrophilic processing procedure of the substrate having photoresist (PR) pattern; the procedure of applying a coating agent for producing a finer pattern on the substrate; the procedure of thermally shrinking the coating agent for producing a finer pattern by heat treatment to narrow the gap in the photoresist pattern through the use of thermal shrinking effect; and the procedure of completely removing the above coating agent for producing a finer pattern.
Patent TW-I250331-B (TW)
Title: Liquid crystal display and electronic apparatus
Inventor: MAEDA TSUYOSHI
IPC: G02F1/13
Filed: 2003-11-07
Granted: 2006-03-01
Abstract: To provide high-contrast reflective display and transmissive display with a wide viewing angle in a transflective liquid crystal display device having reflective and transmissive structures. Each of dots contains a reflective display region for reflective display and a transmissive display region for transmissive display. A liquid crystal layer is composed of a nematic liquid crystal aligned substantially perpendicularly to substrates and having a negative dielectric anisotropy. A first retardation film having an optically negative uniaxiality, a second retardation film having an optically positive uniaxiality, and a first polarizer are arranged in that order outside an upper substrate, and a third retardation film having an optically negative uniaxiality, a fourth retardation film having an optically positive uniaxiality, a second polarizer, and illumination means are arranged in that order outside a lower substrate.
Patent TW-I229571-B (TW)
Title: Display device and desiccating agent
Inventor: OMURA TETSUJI
IPC: H01L51/50
Filed: 2003-11-19
Granted: 2005-03-11
Abstract: This invention provides a display device having a substrate carrying pixels, in which an ill effect on the substrate caused by a desiccating agent is effectively prevented. An upper side of the pixel substrate (10) is sealed by a sealing substrate (14). An inner surface of the sealing substrate (14) is provided with a desiccating agent (16). An adhesive agent made of resin having particles of moisture absorbent dispersed therein is used as the desiccating agent (16), wherein the particles of the moisture absorbent have a particle size set at less than 10 mum. With this arrangement, the desiccating agent is prevented from cracking.
Patent TW-I251250-B (TW)
Title: A method of forming carbon nanotubes
Inventor: WENG WEI-HSIANG
IPC: H01J37/073
Filed: 2003-11-27
Granted: 2006-03-11
Abstract: The present invention relates to a method of forming carbon nanotubes. The method includes the following steps: providing a smooth base; depositing magnetic catalysts on the base; position magnetic components above the base in a predetermined distance; introducing a carbon source gas, and forming carbon nanotubes perpendicular to the base because of magnetic field produced by the magnetic components.
Patent TW-I220803-B (TW)
Title: The adjustable end plate structures for the fuel cells
Inventor: CHANG YU-CHING
IPC: H01M8/04
Filed: 2003-12-02
Granted: 2004-09-01
Abstract: The present invention provides the adjustable end plate structures for the fuel cells, which are applied in a fuel cell system to lock a fuel cell pile between two end plates via a tying lock device. An adjustable device structure is arranged on the two end plates for adjusting and controlling the bent deformation of the two end plates. A connection device is connected to the adjustable device structure. Therefore, an adjustable end plate device structure of cell battery is constructed to enable the end plate to bear suitable force or torque, thereby maintaining the flatness of the end plate to enhance the airtight capability of the fuel cell system.
Patent TW-I231080-B (TW)
Title: Power delivery apparatus, systems, and methods
Inventor: ALGER WILLIAM
IPC: H05K3/22
Filed: 2004-02-23
Granted: 2005-04-11
Abstract: An apparatus and system, as well as fabrication methods therefor, may include a conductor attached to a carrier to bridge a contact field defined by a circuit that can be mounted to a circuit board.
Patent TW-I270836-B (TW)
Title: Plasma display panel and driving method thereof
Inventor: WU JIUN-HAN
Filed: 2004-03-02
Granted: 2007-01-11
Abstract: A plasma display panel and driving method thereof. The plasma display penal has a plurality of scan electrodes, a plurality of address electrodes, a plurality of dummy electrodes and a data controller. The scan electrodes and address electrodes define a plurality of display units forming a display region. The scan electrodes and the dummy electrodes define a plurality of dummy units forming a dummy region. During address period, the data controller respectively outputs data signals to the address electrodes and outputs a control signal to the dummy electrodes, so that the dummy units display a fixed image during sustain period.
Patent TW-I227931-B (TW)
Title: Method of fabricating insulating layers
Inventor: LIN YU-LIANG
IPC: G06F17/00
Filed: 2004-04-22
Granted: 2005-02-11
Abstract: A method of fabricating an insulating layer. A fluid is provided to a substrate, wherein the fluid is provided in an aerosol form. A supercritical process environment is then generated proximate to the substrate, wherein the supercritical process environment has a supercritical process temperature and a supercritical process pressure for altering the fluid. Finally, the substrate is placed in contact with the altered fluid, wherein an insulating layer is formed on the substrate by a reaction between the substrate and the fluid.
Patent TW-I276309-B (TW)
Title: Device and method for controlling vehicle from remote site
Inventor: SHAU YI-SHIUAN
IPC: H04B1/00
Filed: 2004-05-11
Granted: 2007-03-11
Abstract: The present invention relates to a device and a method for controlling a vehicle from a remote site, which comprises a control end and a vehicle. A wireless network or a wireless communication network or both are used to serve as a fast channel for real-time, interactive, and expandable transmission of control messages and monitoring messages between the control end and the vehicle such that obstacle barrier caused by distance between the control end and the vehicle can be overcome.