baber/WOPTO huggingface dataset:
Patent TW-500962-B (TW)
Title: Surface light source and method for adjusting its hue
Inventor: KUWABARA SATOSHI
IPC: G02B6/00
Filed: 2000-11-10
Granted: 2002-09-01
Abstract: The present invention provides a surface light source device and a method for adjusting its hue. Light enters the surface light source device from plural point light sources (2)... mounted on one of side end surfaces of a light guide plate (1), being reflected by a reflecting surface (11) at a rear surface of the light guide plate (1), and is emitted from the surface of the light guide plate (1). The point light sources (2) are formed of white light-emitting diode elements, and two white diode elements among six white diode elements, having chromaticity furthermost from the center of a target chromaticity range in the opposite directions of color phases, are located at an approximate center of a group of white diode elements.
Patent TW-501989-B (TW)
Title: Three-dimensional thermal transfer printing method
Inventor: WANG JING-SHING
IPC: B44C1/16
Filed: 2000-11-13
Granted: 2002-09-11
Abstract: This invention relates to a three-dimensional thermal transfer printing method for automatically transfer printing three-dimensional plastic objects with a three-dimensional thermal transfer printing equipment, which includes the following steps: pulling out the transfer printing paper putting between the upper and lower mold sets, and the upper and lower molds; controlling the positioning of the transfer printing paper with an electrical eye; pressing the upper module down to a fixed position for forming a closed space with the transfer printing paper, the lower mold, and the lower mold set, and fixing the transferring paper to wrap the lower mold and the working object; while the upper mold pressing the working object, utilizing high pressure blowing (10 to 35 kg/cm<SP>2</SP>) and high temperature around 100 120 degree C, pushing the silicon film with the same shape as the working object and the transferring paper to fully print the pattern on the transfer printing paper onto the working object; then, retracting the mold and changing the working object. With such continuous cycling, an automated three-dimensional thermal transfer printing method is formed.
Patent TW-530280-B (TW)
Title: Liquid crystal display device
Inventor: MURAI HIROYUKI
IPC: G02F1/133
Filed: 2000-11-22
Granted: 2003-05-01
Abstract: A liquid crystal display device is obtained which performs point-sequential driving so that unevenness in brightness on a display screen becomes less noticeable. A signal line driving circuit that applies an image signal voltage sent from a signal processing circuit and a timing circuit to signal lines for performing point-sequential driving of the signal lines includes a driving direction switching circuit for inverting a driving direction of the point-sequential driving, and the signal processing circuit includes an image signal rearranging circuit for performing rearrangement of image signals, which is needed in accordance with inversion of the driving direction, in synchronization with the inversion of the driving direction.
Patent TW-455702-B (TW)
Title: Tunable fabry-perot filter having a movable tuning element
Inventor: AL-HEMYARI KADHAIR
IPC: G02B6/12
Filed: 2000-11-22
Granted: 2001-09-21
Abstract: An optical filter which filters an optical signal passing therethrough includes a first waveguide having a core defining an optical path through the first waveguide and a partially-reflective first facet, and second waveguide having a core defining an optical path through the second waveguide and that is coaxial with the first waveguide optical path and a partially-reflective second facet, the first and the second waveguides being separated from each other by a trench defined therebetween, the firs and second facets defining a Fabry-Perot cavity therebetween. A tuning element is disposed in the trench between the first and second waveguides and can be selectively moved between a first position to alter the optical length of the Fabry-Perot cavity.
Patent TW-486875-B (TW)
Title: Digital-to-analog converter
Inventor: NORO MASAO
IPC: H03M1/74
Filed: 2000-11-28
Granted: 2002-05-11
Abstract: There is provided a D/A converter that is free from a variation in the voltage width of 1 LSB between more significant bits and less significant bits of data for conversion due to variations in characteristics of resistors, transistors, etc. to thereby ensure a higher conversion accuracy than the conventional D/A converter. The eight more significant bits of 12-bit data for conversion are applied to a decoder 21, while the four less significant bits of the same are applied to a current addition circuit 22. The decoder 21 selects one of FET' s F0 to F255 based on the eight more significant bits to cause one of voltages divided by a series circuit formed by resistors r0 to r255 to be applied to an operational amplifier 40. On the other hand, switches 30 to 33 of the current addition circuit 22 are switched, respectively, by the four less significant bits to turn respective FET's 35 to 38 on and off. As a result, currents flowing through turned-on ones of the FET's 35 to 38 are synthesized to flow through the resistor ra so that a voltage is generated across the resistor ra. The operational amplifier 40 synthesizes the two voltages and then outputs the synthesized voltage. An FET 24 and each of the FET's 35 to 38 form a current mirror circuit, whereby the influence of variations in characteristics of the resistors, etc. is eliminated.
Patent TW-I257528-B (TW)
Title: Positive resist composition
Inventor: KODAMA KUNIHIKO
IPC: H01L21/027
Filed: 2000-12-14
Granted: 2006-07-01
Abstract: Provided is a positive resist composition having excellent sensitivity and resolution, and even it is in course of heat treatment after exposure with time, a pattern profile having excellent resolution and little density dependency can be obtained by using a far-ultraviolet light, especially ArF excimer laser light used in microphotofabrication. A positive resist composition comprises a specifically structured photoacid generator having repeating units of at least two different structures, and a polymer having acid-decomposable groups.
Patent TW-475961-B (TW)
Title: Valve operating system in internal combustion engine
Inventor: TANAKA CHIKARA
IPC: F01L1/12
Filed: 2000-12-15
Granted: 2002-02-11
Abstract: In a valve operating system in an internal combustion engine, a swinging support section provided at a base end of a rocker arm is swingably carried on a rocker shaft mounted in a cylinder head. A plurality of valve abutments are provided at a tip end of the rocker arm and capable of being individually put into abutment against upper ends of a plurality of engine valves, and a cam abutment is provided on the rocker arm in an intermediate portion between the swinging support section and each of the valve abutments to come into contact with a valve operating cam. The swinging support section comprises a thinner cylindrical portion surrounding the rocker shaft, and thicker cylindrical portions which are formed at a thickness larger than that of the thinner cylindrical portion into a cylindrical shape to surround the rocker shaft and which are integrally and continuously provided at axially opposite ends of the thinner cylindrical portion, respectively. Thus, it is possible to enhance the durability of the rocker arm, while avoiding an increase in weight of the rocker arm.
Patent TW-469307-B (TW)
Title: Method for making warp knitting beam comprising staple spun yarn, and feed system
Inventor: IMAGAWA SHOJI
IPC: D02H5/02
Filed: 2000-12-20
Granted: 2001-12-21
Abstract: To provide a method for making a warp knitting beam comprising staple spun yarns and excellent in quality and production efficiency, and to provide a feed system for the beam. This method comprises the following process: a specified number of staple spun yarns wound on a warping beam 5 is wound, while being sized, on a prebeam 3, and in respect to the resultant spun yarns, staple spun yarns sized by the difference between the needed number and specified number are increased/decreased and the prebeam 3 is rewound to effect winding on the warp knitting beam 4. The feed system for the above warp knitting beam is also provided.
Patent TW-475260-B (TW)
Title: Formation method of bit line contact area in the CUB DRAM manufacturing process
Inventor: TZENG GUO-CHIUAN
IPC: H01L27/108
Filed: 2000-12-27
Granted: 2002-02-01
Abstract: There is provided a formation method of bit line contact area, particularly between crown capacitors, in the capacitor under bit line (CUB) DRAM manufacturing process, which comprises the following steps. First, there is provided a semiconductor substrate formed thereon a transistor structure and a crown capacitor structure. The capacitor structure is respectively formed on a plug connected to the drain of the transistor. In addition, there are plugs connected to the sources of the plurality of transistors. The structure is formed in a first dielectric layer. Besides, the crown capacitor structure is protruded out of the first dielectric layer. The cap electrodes are extended out of the crown capacitor and connected by the edge of the cap. Next, a photoresist pattern is formed on the cap electrode, and the connection of the cap edge is cut off by etching. Then, a wet etching is performed to etch off the top electrode of the cap edge portion under the photoresist layer by using the capacitor dielectric layer as the stop layer. Subsequently, the photoresist pattern is removed. A second dielectric layer is formed and the manufacture of the bit line contact hole is completed by the photolithography and etching technique.
Patent TW-492100-B (TW)
Title: Semiconductor wafer processing apparatus
Inventor: KOMA YUTAKA
IPC: H01L21/683
Filed: 2001-02-19
Granted: 2002-06-21
Abstract: A semiconductor wafer processing apparatus grinds a surface of a semiconductor wafer by mechanical grinding, and then removes a damaged layer in the ground surface. In the processing apparatus, a grinding portion, a precenter portion, a wafer cleaning portion, plasma treatment portions, and magazines are arranged radially about an origin of a polar coordinate system of a third wafer transport portion having a robot mechanism, and their positions of arrangement are set such that the origin is located on lines of extension of wafer carry-in and carry-out center lines of the plasma treatment portions. Thus, the number of changed grippings of the semiconductor wafer can be minimized to prevent breakage of the semiconductor wafer. Moreover, transfer of the semiconductor wafer between the respective portions can be covered by the single robot mechanism, and the equipment can be made compact.
Patent TW-506196-B (TW)
Title: Arithmetic decoding of an arithmetically ecoded information signal
Inventor: VLEUTEN RENATUS JOSEPHUS VAN D
IPC: H03M7/40
Filed: 2001-03-23
Granted: 2002-10-11
Abstract: The invention relates to measures to improve an arithmetic decoder. The method of arithmetically decoding an arithmetically encoded information signal into an information signal comprising a serial sequence of n-bit symbols is adapted to decode two subsequent symbols of the information signal in one decoding cycle if the first symbol to be decoded has the most probable symbol.
Patent TW-I246987-B (TW)
Title: Method of clarifying water using low molecular weight cationic dispersion polymers
Inventor: SPARAPANY JOHN W
IPC: C02F1/68
Filed: 2001-04-03
Granted: 2006-01-11
Abstract: This invention is directed to a method of clarifying water comprising adding to the water an effective clarifying amount of a low molecular weight water-soluble cationic dispersion polymer prepared by polymerizing one or more cationic monomers and one or more nonionic monomers and one or more chain transfer agents under free radical forming conditions in an aqueous solution of an anionic salt in the presence of a stabilizer polymer, wherein the cationic dispersion has a cationic charge of from about 1.0 mole percent to about 75 mole percent and an RSV of from about 0.2 dl/g to about 6 dl/g.
Patent TW-I225662-B (TW)
Title: Method of forming structures on a semiconductor
Inventor: CHARLES ALAIN BERNARD
IPC: H01L21/027
Filed: 2001-04-09
Granted: 2004-12-21
Abstract: A method of forming structures on a semiconductor wafer (1) by lithographic and subsequent ion implant steps comprises the steps of: deposition of a resist layer (5) on a surface of said semiconductor wafer (1), exposing said resist layer to light of a predetermined wavelength through a reticle and an optical system so as to form an image of said reticle on said semiconductor surface, developing and cleansing said surface of said semiconductor wafer (1) so as to remove at least partly said resist layer (5) depending on whether or not said resist layer had been exposed, implantation of ions so as to determine the conductivity of said semiconductor in said cleansed areas of said semiconductor surface. In order to allow the preparation of the resist for all doping profiles in a single processing step it is suggested that the surface energy of the resist (5) vs. the semiconductor (1) is chosen so as to accomplish a conglomeration of the resist depending on the density of the structures (2, 4) on the semiconductor surface.
Patent TW-503423-B (TW)
Title: Plasma display panel
Inventor: OKIGAWA AKIFUMI
IPC: H01J11/12
Filed: 2001-06-20
Granted: 2002-09-21
Abstract: In order to provide an AC type plasma display panel having improved luminous efficiency, small power consumption and high luminance, sustaining electrodes (14a, 14b) of the AC type plasma display panel take in the form of mesh electrodes each having a plurality of openings (13). Each opening (13) is a strip-shaped opening having a size included in a rectangular area having one of sides thereof smaller than 30 μm or having a width smaller than 30 μm.
Patent TW-530418-B (TW)
Title: Solid-state image pickup device and image input device
Inventor: MABUCHI KEIJI
IPC: H04N5/335
Filed: 2001-12-26
Granted: 2003-05-01
Abstract: The present invention provides a solid-state image pickup device and an image input device which can achieve a low power consumption and a low random noises of MOS solid-state image pickup device. The solid-state image pickup device includes a sensor portion 22 having plural pixels arranged; a vertical scan portion 23 and a horizontal scan portion 24 for scanning the pixels of the sensor portion 22; an output portion 26 to which signals output from the sensor portion 22 are supplied; a bias current adjusting portion 30 for making the bias current of the output portion 26 variable; a driving signal generator 27 for supplying driving signals to the vertical scan portion 23, the horizontal scan portion 24 and said output portion 26; and an input portion 28 for supplying plural driving mode signals to the driving signal generator 27, wherein the driving frequency is made variable by the plural driving mode signals, and the bias current adjusting portion 30 is supplied with a signal for making the bias current variable in accordance with the plural driving mode signals.
Patent TW-593896-B (TW)
Title: Electric fan with far infrared ray lamp
Inventor: PARK CHAN-SEOK
IPC: F04D19/00
Filed: 2001-12-28
Granted: 2004-06-21
Abstract: Disclosed is an electric fan including a driving motor, a blower fan unit, and front and rear safety nets. A far infrared ray lamp part including a socket and a far infrared ray lamp is positioned in front of the blower fan unit. The front and rear safety nets are detachably fastened to each other by a fastening ring. A lamp protective net, which is covered with a stainless coating to be decreased in heat conductivity and heat-resistant, is placed in front of the far infrared ray lamp part where heat is generated.
Patent TW-522579-B (TW)
Title: Metal-bonded light emitting diode having insulation medium layer and its manufacturing method
Inventor: SHIE MING-SHIUN
IPC: H01L33/00
Filed: 2001-12-27
Granted: 2003-03-01
Abstract: A metal-bonded light emitting diode having insulation medium layer and its manufacturing method are disclosed in the present invention. The manufacturing method comprises the following steps: forming a semiconductor stacked layer, an insulation medium layer, a metal-bonded layer on the first substrate to have the first stacked layer structure; selecting the second substrate; placing the first stacked layer structure on the second substrate to bond them together so as to have the second stacked layer structure; and removing the first substrate.
Patent TW-550937-B (TW)
Title: Carriage structure for use with image scanner
Inventor: CHIEN CHUWN-JEN
IPC: G03B27/50
Filed: 2002-02-05
Granted: 2003-09-01
Abstract: A carriage structure for use with an image scanner is disclosed. The carriage structure includes a first reflective mirror set for reflecting light from a scanned object; a lens disposed downstream of the first reflective mirror set in the optical path direction for refracting the light from the first reflective mirror set; a second reflective mirror set disposed downstream of the lens in the optical path direction for further reflecting the light from the lens; and a photoelectric conversion element diposed downstream of the second reflective mirror set in the optical path direction for receiving and converting the light from the second reflective mirror set into electric level signals.
Patent TW-565778-B (TW)
Title: A general and efficient method for transforming predicated execution to static speculation
Inventor: PARK JOSEPH C H
IPC: G06F9/30
Filed: 2002-02-06
Granted: 2003-12-11
Abstract: A method and apparatus involving an extensible rule-based technique for optimizing predicated code is disclosed. The technique includes if-converting an abstract internal representation and mapping the if-conversion to a machine representation. The technique may include eliminating predicates from the mapped if-conversion. The eliminating of predicates may include eliminating a predicate defining instruction by interpretation; eliminating a guarding predicate of a safe instruction by speculation; eliminating a guarding predicate of an unsafe instruction by compensation; and eliminating a guarding predicate of an unsuitable instruction by reverse if-conversion. The technique may include optimizing the machine representation.
Patent TW-533579-B (TW)
Title: Semiconductor device having divided active regions with comb-teeth electrodes thereon
Inventor: AOKI YOSHIO
IPC: H01L29/80
Filed: 2002-03-13
Granted: 2003-05-21
Abstract: A high-frequency semiconductor device for power amplification has a comb-teeth electrode on each of active regions formed on the front surface of the semiconductor substrate. One aspect of the present invention, there is provided a monolithic microwave integrated circuit (MMIC) having a plurality of rectangular-shaped active regions arranged side by side on the front surface of the semiconductor substrate, each of the active regions having interdigited gate, drain and source electrodes thereon which are connected to the respective pads by multilayer interconnection technique. Additionally, the source potential is fed from the back surface of the substrate through a metal plugged via-hole.
Patent TW-583826-B (TW)
Title: Amplifier circuit with an on-chip inductor
Inventor: JUDKINS JAMES G
IPC: H03F3/60
Filed: 2002-04-11
Granted: 2004-04-11
Abstract: An amplifier circuit formed on a single semiconductor substrate includes a first amplifier having at least one stage for amplifying signals within a first frequency band; a second amplifier having at least one stage for amplifying signals within a second frequency band; and a tapped coil having one end thereof coupled to a stage of the first amplifier and a tap thereof coupled to a stage of the second amplifier. The amplifier circuit may be an RF amplifier circuit, a first portion of the tapped coil serving as an RF choke for said stage of the first amplifier, and a second portion of the tapped coil serving as an RF choke for said stage of the second amplifier. Sharing the tapped coil between multiple band amplifiers increases integration density.
Patent TW-569641-B (TW)
Title: Component member for electric and electronic equipment, component member for electroacoustic transducer and method of manufacturing the same
Inventor: OKUZAWA KAZURO
IPC: H04R31/00
Filed: 2002-05-22
Granted: 2004-01-01
Abstract: A component member for electric and electronic equipment with a surface treatment layer mainly comprising colloidal silica formed on a zinc or a zinc alloy layer on a surface of a metal component, and a protective layer formed on the surface treatment layer. The surface treatment layer further includes at least one of aluminum, titanium and cobalt as a metal component. A structure of the present invention provides a component member for an electric and electronic equipment with excellent heat resistance, excellent corrosion resistance and excellent bonding strength.
Patent TW-554534-B (TW)
Title: Trench gate type semiconductor device and manufacturing method therefor
Inventor: KAWAMURA TAKAHIRO
IPC: H01L29/78
Filed: 2002-07-10
Granted: 2003-09-21
Abstract: A trench-gate semiconductor device is provided, which can improve the difficulty of channel inversion to thereby improve the switching characteristics as maintaining the effect of suppression of short-channel effects and the high dielectric voltage characteristic between the gate and the drain. The trench-gate semiconductor device comprises a gate electrode 18 buried in a trench 14, formed in a Si substrate 12 with a gate insulating film 16 interposed between the gate electrode 18 and the trench wall and a source/drain diffusion layer 20 formed in the surface region of the Si substrate 12 by the side of the trench 14. The corner parts 14a and14b at the boundary of the side and bottom walls of the trench 14 are internal corners inwardly curved.
Patent TW-564421-B (TW)
Title: Semiconductor memory device
Inventor: YAMAUCHI TADAAKI
IPC: G11C11/406
Filed: 2002-07-31
Granted: 2003-12-01
Abstract: A refresh array activating signal is Activated in accordance with a refresh request and specific address bit(s) of a refresh address. Specific lower bit(s) of a refresh address counter is (are) utilized as the specific address bit(s) of the refresh address, and the specific address bit(s) is (are) utilized as upper bit(s) of the refresh address. Thus, in the self-refresh mode, refresh can be performed for a prescribed address region at uniform intervals, with a lengthened refresh interval, consuming less current. A semiconductor memory device is provided which allows current consumption to be distributed on a time basis and to be reduce in a self-refresh mode is provided.
Patent TW-552642-B (TW)
Title: Integrated system for oxide etching and metal liner deposition
Inventor: MA DIANA XIAOBING
IPC: H01L21/768
Filed: 2002-08-06
Granted: 2003-09-11
Abstract: An integrated process and system for etching a hole in an oxide layer and conformally coating a liner for metal filling. The wafer with a patterned photoresist mask is loaded into a first transfer chamber held at a vacuum of less than 1 Torr. An oxide etch reactor etches the oxide down to a nitride etch stop and barrier layer to form a hole through the oxide. Thereafter, the photoresist is ashed, and the barrier layer is removed. The wafer is transferred through a gated vacuum passageway to a second transfer chamber held at a vacuum no more than 10<-6> Torr. In at least two PVD or CVD deposition chambers connected to the second transfer chamber, a barrier layer of Ta/TaN is coated onto sides of the hole and a copper seed layer is deposited over the barrier layer. The invention may be limited to the operations subsequent to ashing.