baber/WOPTO huggingface dataset:
Patent TW-343363-B (TW)
Title: An improved process to apply photoresist primer to a wafer
Inventor: CHERN YEONG-DAR
IPC: H01L21/31
Filed: 1996-02-15
Granted: 1998-10-21
Abstract: An improved method of applying hexamethyldisilizane (HMDS) to a wafer prior to coating the wafer with photoresist; providing a wafer chamber with an inlet and an outlet; a HMDS source for producing HMDS vapor; a conduit connecting the HMDS source and the wafer chamber; a chamber inlet valve located on the conduit between the HMDS source and the chamber; the chamber inlet valve having an open and closed position; an outlet duct connecting the outlet with an evacuation means; the evacuating means for evacuating the outlet duct, the wafer chamber, the conduit, and the source; and an outlet valve on the outlet duct between the chamber and the evacuation means; the outlet valve having an open and close position; and including: (a) opening the chamber and placing a wafer into the chamber and closing the chamber; (b) closing the chamber inlet valve, opening the outlet valve, and evacuating the wafer chamber using the evacuating means, and turning off the evacuating means; (c) introducing HMDS vapor from the HMDS source into the conduit, and opening the chamber inlet valve thereby allowing HMDS to flow into the wafer chamber thus priming the wafer with HMDS; (d) closing the chamber inlet valve, stopping the introduction of HMDS vapor from the source; evacuating the wafer chamber using the evacuating means; and closing the outlet valve; (e) opening the chamber and removing the primed wafer and closing the chamber; the method comprising: (1) opening the chamber inlet valve, opening the outlet valve, and evacuating the source, the conduit duct, and the chamber using the evacuating means; and (2) closing the chamber inlet valve, closing the outlet valve, and maintaining the chamber and the conduit at a pressure between about -12 to -17 inches of H2 O thereby preventing primer condensation from building up in the source, the conduit duct, and the chamber between the wafer steps (e) and (a); and repeating steps (a) through (e) and (1) through (2).
Patent TW-401383-B (TW)
Title: Firing sol-gel alumina particles
Inventor: GARG AJAY K
IPC: C09K3/14
Filed: 1996-04-30
Granted: 2000-08-11
Abstract: Sol-gel alumina that is dried but unfired can be explosively comminuted by feeding the dried gel into a furnace held at temperatures above those at which vaporizable materials are eliminated from the particles of gel. At suitably elevated temperatures the firing is sufficient to form fully densified alpha alumina particles of a size suitable for direct use as abrasive grits.
Patent TW-311957-B (TW)
Title: The improving method for weak foundation
Inventor: KURIMOTO MASASHI
IPC: E02D3/12
Filed: 1996-07-01
Granted: 1997-08-01
Abstract: An improving method for weak foundation. Mix the sandy soil and cement into mixing powder, put mixing powder into pipe inside the foundation, then pull out the pipe, and expel the mixing powder into foundation for absorbing water from foundation to form foundation improving pillar.
Patent TW-300937-B (TW)
Title: Window stile
Inventor: JOHN SHUGG
IPC: E06B1/04
Filed: 1996-07-01
Granted: 1997-03-21
Abstract: A window stile is disclosed which has a base (14) and projecting stile members (16). A central projection (20) extends from the base (14) for part of the length of the projecting stile members (16). The projecting stile members (16) have inturned ends (28) which have a C-shaped channel (30) for carrying anti-rattle strips (40) for sealing against a window pane. The central projections (20) each have C-shaped channels (60) also for receiving anti-rattle strips (70) which seal against side edges of the window panes.
Patent TW-395108-B (TW)
Title: Value Transfer System
Inventor: EVERETT DAVID BARRINGTON
IPC: G06Q20/34
Filed: 1996-07-11
Granted: 2000-06-21
Abstract: A value transfer system using integrated circuit cards for exchanging electronic cash in off-line transactions employs cryptographically secure message protocols. Cards are loaded each with two schemes from a series and interaction between cards determines and uses the oldest scheme shared by the cards, causing one card to switch schemes irrevocably if that common scheme is its second scheme. In this way a switch to a new scheme can migrate through the system.
Patent TW-350847-B (TW)
Title: New process for preparing norbenzomorphan, an intermediate in the preparation of pharmaceutically useful benzomorphan derivatives, particularly (-)-(1R,5S,2"R)-3'-hydroxy-2-(2-methoxypropyl)-5,9,9-trimethyl-6,7-benzomorphan
Inventor: GRAUERT MATTHIAS
IPC: C07D471/08
Filed: 1996-07-23
Granted: 1999-01-21
Abstract: A process for preparing norbenzomorphan of formula (I) or corresponding stereo isomer thereof, wherein R1 represents hydrogen, C1-6 alkyl, hydroxy, C1-8 alkoxy in a step of cyclizing the compound of formula (10) (in which R2 represents C1-8 alkoxy) in the presence of inert solvent and Louis acid to obtain compound (11), in which R2 is as defined above, and then deformylizing under acidic condition to obtain compound (12) wherein R2 is as defined above, and if necessary and if R2 represents the -yl-R1 required, then separating compound (1) in the form of acid-added salt, and if necessary, releasing its free-state alkali, or if wanting to prepare compound (1) having R1 as hydroxy and R2 as alkoxy, converting the free-state alkali in compound (12) having R2 as alkoxy by ether cracking into comound (1) having R1 as hydroxy which can be separated in the form of acid-added-salt or free-state alkali.
Patent TW-382139-B (TW)
Title: Manufacturing method for pattern forming etching of semiconductor device
Inventor: NAKAGAWA SATOSHI
IPC: H01L21/3213
Filed: 1997-01-28
Granted: 2000-02-11
Abstract: A kind of manufacturing method for semiconductor device especially regarding to the etching method for strong dielectric, high dielectric constant material and platinum. The method is to form insulation film on the semiconductor substrate; sequentially forming lower platinum layer, strong dielectric film, upper platinum layer and titanium film and forming the photosensitive anti-erosion agent mask of expected pattern; by setting the thickness of titanium film more than one tenth of the layer thickness combining upper platinum film and strong dielectric film and lower platinum film; then, employing dry-etching to etch the titanium film and removing the photosensitive anti-erosion agent mask by ashing treatment; employing the patterned titanium layer as the mask and the dry-etching method using mixing gas plasma of chlorine and oxygen with volume concentration of oxygen at 40% to etch the upper platinum film and strong dielectric film and lower platinum film; then, because the titanium film would be oxidized, it could have higher etching selection rate and employs the chlorine plasma dry-etching method to remove the titanium film.
Patent TW-494312-B (TW)
Title: Emulating a delayed exception on a digital computer having a corresponding precise exception mechanism
Inventor: HOHENSEE PAUL H
IPC: G06F9/38
Filed: 1997-03-18
Granted: 2002-07-11
Abstract: A digital computer system comprises a precise exception handling processor and a control subsystem. The precise exception handling processor performs processing operations under control of instructions. The precise exception handling processor is constructed in accordance with a precise exception handling model, in which, if an exception condition is detected in connection with an instruction, the exception condition is processed in connection with the instruction. The precise exception handling processor further includes a pending exception indicator having a pending exception indication state and a no pending exception indication state. The control subsystem provides a series of instructions to the precise exception handling processor to facilitate emulation of at least one emulated program instruction. The emulated program instruction is constructed to be processed by a delayed exception handling processor which is constructed in accordance with a delayed exception handling model, in which if an exception is detected during processing of an instruction, the exception condition is processed in connection with a subsequent instruction. The series of instructions provided by the control subsystem in emulation of the emulated program instruction controls the precise exception handling processor to (i) determine whether the pending exception indicator is in the pending exception indication state and, if so, to invoke a routine to process the pending exception and condition the pending exception indicator to the no pending exception indication state (ii) perform processing operations in accordance with the emulated processing instruction, and (iii) if an exception condition is detected during the processing operations, to invoke an exception handler in accordance with the processor's precise exception handling model to condition the pending exception indicator to the pending exception indication state, so that the exception condition will be processed during processing operations for a subsequent emulated program instruction.
Patent TW-336159-B (TW)
Title: Method and apparatus for continuously and quantitatively supplying bread dough
Inventor: HAYASHI TORAHIKO
IPC: A21C3/02
Filed: 1997-05-21
Granted: 1998-07-11
Abstract: A method for continuously and quantitatively supplying bread dough, comprizing: a pressing means having 2 movable means, one of which is at least one roller or one belt conveyor, and the other one is at least one belt conveyor, said roller being adapted to rotate about its own axis to apply a force to pul bread dough downward and said belt conveyor being adapted such that its conveying surface moves from above downward to apply a force to pull the bread dough downward, and which 2 movable means are oppositely positioned in a generally horizontal direction, both or either of said 2 movable means being adapted to reciprocally move in a generally horizontal direction to increase and decrease the distance between said 2 movable means, thereby preventing the pressure on said bread dough positioned between said 2 movable means from being increased so as to allow said bread dough to flow stably downward from therebetween.
Patent TW-323348-B (TW)
Title: Power-on reset circuit without resistor and capacitor
Inventor: WANG SHYH-JYE
IPC: G06F1/24
Filed: 1997-05-26
Granted: 1997-12-21
Abstract: A power-on reset circuit at least includes a primary class circuit used to measure conducting state, in which after detecting of conducting state the primary state circuit will remain at a primary state, and while input signal changes from a secondary state to a primary state, a primary class circuit output signal generated by primary class circuit changes from a primary state to a secondary state; and a secondary circuit in connection with the primary circuit for measuring the conducting state and generating a power-on reset signal, in which after the secondary circuit detects the conducting state, the power-on reset signal will keep staying at the primary state, and while the primary circuit changes from the primary state to the secondary state for the first time, the power-on reset will change from the primary state to the secondary state.
Patent TW-467902-B (TW)
Title: Diphenyl heterocycles as potassium channel modulators
Inventor: ROMINE JEFFREY L
IPC: C07D233/54
Filed: 1997-07-15
Granted: 2001-12-11
Abstract: Novel compounds of formula 1 are useful to treat disorders responsive to openers of the large conductance calcium-activated potassium channels: wherein ""Het"" is one of a select group of heterocyclic moieties; Z is independently for each occurrence selected from O or S; Ra, Rb and Rc each are independently selected from hydrogen, halogen, OH, CF3, NO2, or; and when Ra and Rb are hydrogen, Rc may be a heterocyclic moiety selected from the group consisting of imidazol-1-yl, morpholinomethyl, N-methylimidazol-2-yl, and pyridin-2-yl; Rd and Re each are independently selected from hydrogen, halogen, CF3, NO2 or imidazol-1-yl; m, n and p each are independently selected from an integer of 0 or 1; and Rf and Rg each are independently hydrogen; C1-4 alkyl; or Rf and Rg, taken together with the nitrogen atom to which they are attached, is a heterocyclic moiety selected from the group consisting of N-methylpiperazine, morpholine, thiomorpholine, N-benzylpiperazine and imidazolinone.
Patent TW-348245-B (TW)
Title: Copy system and copying control system
Inventor: YOKOYAMA NOBUAKI
IPC: G06T1/60
Filed: 1997-09-02
Granted: 1998-12-21
Abstract: A copy system characterized in comprising: a scanner having an interface; a printer having an interface; and copy control means: the scanner and the printer being separately formed on different machines, and the scanner and the printer being connected together by a cable through the interfaces, the image data from the scanner being read and processed in units of a single line or single block based on the operation instruction of the operating means, and the processed image data being outputted to the printer in units of a single line or single block.
Patent TW-426750-B (TW)
Title: Methods for processing a substrate and for filling apertures in a substrate, a deposition process and computer program products
Inventor: MOSELY RODERICK CRAIG
IPC: H01L21/768
Filed: 1997-09-22
Granted: 2001-03-21
Abstract: The present invention is an apparatus and method for semi-selectively depositing a material on a substrate by chemical vapor deposition to form continuous, void-free contact holes or vias in sub-half micron applications. An insulating layer is preferentially deposited on the field of a substrate to delay or inhibit nucleation of metal on the field. A CVD metal is then deposited onto the substrate and grows selectively in the contact hole or via where a barrier layer serves as a nucleation layer. The process is preferably carried out in a multi-chamber system that includes both PVD and CVD processing chambers so that once the substrate is introduced into a vacuum environment, the filling of contact holes and vias occurs without the formation of an oxide layer on a patterned substrate.
Patent TW-501230-B (TW)
Title: Manufacture method shallow trench isolation
Inventor: GUO JIAN-LI
IPC: H01L21/762
Filed: 1997-10-04
Granted: 2002-09-01
Abstract: This invention provides a manufacture method of shallow trench isolation, which consists of following steps: providing a substrate, forming a pad oxide layer to cover the substrate using thermal oxidation, defining a silicon nitride layer using conventional lithography and etching techniques to form opening and expose the pad oxide layer, forming trenches by etching the pad oxide layer and the substrate in the opening, removing part of the silicon nitride and pad oxide to expose the substrate using hot phosphoric acid and forming a liner oxide layer covering the inner surface of the trenches. The invention is characterized by forming a rounder top corner and thicker liner oxide layer compared with the pad oxide layer to prevent device from leakage current problem due to sub-threshold kink effect.
Patent TW-352333-B (TW)
Title: Grinding machine for processing side surface of footwear sole
Inventor: KANG JAE-DUCK
IPC: A43D8/36
Filed: 1997-10-28
Granted: 1999-02-11
Abstract: The grinding machine for processing a side surface comprises : an acting unit which secures and rotates a phylon sheet and transfers the side surface of the phylon sheet to be corresponding with a sample; a cutting angle adjusting unit which is engaging with the acting unit and adjusts a cutting angle of a cutting surface; a plate elevation adjusting unit which is engaging with the acting unit and the cutting angle adjusting unit and adjusts upper and lower cutting widths of the cutting surface; a cutting unit which is engaging with the cutting angle adjusting unit and the plate elevation adjusting unit and is ascending at the time when a cutter is in an angular forwardly and backwardly movement to directly perform a cutting operation; and a vibroisolating unit for preventing powder dust generated when grinding a midsole from being splashed.
Patent TW-340151-B (TW)
Title: Process of saving water for a flush toilet (1)
Inventor: JIANG CHARNG-RONG
IPC: E03D5/10
Filed: 1998-02-05
Granted: 1998-09-11
Abstract: A process of saving water for a flush toilet (including sit type and squat type) (1), which comprises sequentially opening five time switches, and, prior to use, activating a first time switch to discharge about 0.5 liter of water from the water tank to wet the inner wall of the flush toilet; which mainly is characterized in: installing a water storage container unit capable of sequentially controlling the amount of water discharge and an openable water storage bottom portion; in which, after each use, a second time switch is activated to open the water storage bottom portion in the toilet to discharge the waste matter and water into the sewage pipe; next, a third time switch is activated to further discharge about 2 liters of water (about 0.5 liter for a small toilet) from the water tank to clean up any residue remaining on the inner wall and bottom of the toilet; next, a fourth time switch is activated to close the bottom portion; and finally, a fifth time switch is activated to further discharge about 0.5 liter of water (same for large or small toilets) from the water storage container to flow into and stay in the water storage area to keep out bugs and foul odor and get ready for the next cycle of use.
Patent TW-367555-B (TW)
Title: Post-processing method for plasma etching
Inventor: TAKAHASHI KAZUE
IPC: H01L21/302
Filed: 1998-02-24
Granted: 1999-08-21
Abstract: A kind of post-processing method for semiconductor substrate after plasma etching using gas containing chloride for the semiconductor substrate with aluminum wiring. In the post-processing, the gas used for polishing contains hydrogen and fluorine and the mixing ratio of the two is limited under 2%, but better 1%. Therefore, it can increase the polishing speed of the anti-erosive object and for better anti-erosion and superior ablation property so that the time of post-processing can be shortened and improve the treatment on sidewall ablation which can increase the productivity and yield rate.
Patent TW-392004-B (TW)
Title: Weft storing apparatus for fluid jetting type weaving machine
Inventor: SUWA MITSURU
IPC: D03D47/36
Filed: 1998-04-27
Granted: 2000-06-01
Abstract: To provide the subject apparatus of simple constitution, capable of efficiently storing weft with a small amount of a circular air flow and not damaging the weft. This weft storing apparatus has a cylindrical storage part 20 fixed to a revolving shaft 10 rotating synchronously with the main shaft of a water machine and a holding part 16 fixed to the revolving shaft 10 coaxially with the storage part 20. The holding part 16 has a truncated cone-shaped side converging from the edge part of the storage part 20 in a weft drawing direction and is equipped with a stationary cover 34 provided with a channel part 32 constituting a part of a circular air flow passage 30 which covers the truncated cone-shape side and rotates a weft. A channel part 26 constituting the circular air flow passage 30 is formed on the truncated cone-shaped side of the holding part 16 opposing to the channel part 32 of the stationary cover 34. The ratio of the central diameter of the circular air flow passage 30 to the outer diameter of the storage part 20 is 0.4-0.85.
Patent TW-381302-B (TW)
Title: Sustained self-sputtering reactor having an increased density plasma
Inventor: FU JIAN-MING
IPC: H05H1/46
Filed: 1998-05-07
Granted: 2000-02-01
Abstract: A plasma reactor for physical vapor deposition (PVD), also know as sputtering, which is adapted so that the atomic species sputtered from the target can self-sustain the plasma without the need of a working gas such as argon. The self-sustained sputtering (SSS), which is particularly applicable to copper sputtering, is enabled by several means. The density of the plasma in the region of the magnet assembly of the magnetron is intensified for a fixed target power by reducing the size of the magnets. To provide more uniform sputtering, the small magnetron is scanned in one or two dimensions over the back of the target. The density of the plasma next to the target is also intensified by positioning an anode grid between the target and the substrate, which provides a more planar geometry. Additionally, the substrate can then be biased to more effectively control the energy and directionality of the flux of sputtered particles incident on the wafer.
Patent TW-374935-B (TW)
Title: Method of elimination of edge of backing film off a wafer and the prescription of wet-etching liquid acid used on the silicon wafer surface oxidized film
Inventor: HUANG CHANG-WEI
IPC: H01L21/306
Filed: 1998-06-12
Granted: 1999-11-21
Abstract: The present invention relates to a sort of method of elimination of edge of backing film off a wafer based on the Bernoulli principle, including roughly the provision of a chuck for carrying the silicon wafer, a conduit located on top of the silicon wafer, through which the etching liquid is dripped onto the upper surface of the silicon wafer to turn said carrier at high speed (referred to as bearing tray in this invention), which rotation would drive the silicon wafer to turn, making the etching liquid be driven onto the edge of the silicon wafer, which upper surface having a film formed and distributed onto the upper surface of the silicon wafer and the etching liquid would be, based on the Bernoulli principle, carried by the etching liquid to the edge of the lower surface of the silicon wafer for etching thanks to the air flow injected from the vent of the bearing tray under the silicon wafer. Besides, this invention provides a wet etching liquid for use on the oxidized film on the surface of the wafer, consisting acetic acid, hydrofluoric acid, ammonium fluoride and H2O.
Patent TW-426794-B (TW)
Title: Safety locking female coupling unit
Inventor: STREET DAVID G
IPC: F16L37/18
Filed: 1998-06-26
Granted: 2001-03-21
Abstract: A safety locking coupling assembly in which pull rings on the female coupling unit of a male coupling unit/female coupling unit assembly serve both to release the coupling assembly and to maintain the coupling assembly locked against unintentional disconnection. The pull rings are attached to cam arms which engage the male coupling unit to lock the coupling assembly and are disengaged from the male coupling unit to release the coupling assembly. In the locked condition of the coupling assembly, the pull rings abut against ears on the housing of the female coupling unit to oppose unintended movement of the cam arms from the locked position of the cam arms to the released position of the cam arms. Upon intentional removal of the pull rings from abutment with ears by an operator and pulling on the pull rings, the cam arms can be moved from the locked position of the cam arms to the released position of the cam arms to disconnect the coupling assembly.
Patent TW-561147-B (TW)
Title: Process for the production of methyl methacrylate
Inventor: STUART JOSEPH YOUNGBLOOD
IPC: C08F/
Filed: 1998-07-16
Granted: 2003-11-11
Abstract: A process for the manufacture of methyl methacrylate includes a process for separating the methyl methacrylate from certain impurities, at least one of which has a freezing point of greater than -50 DEG C, by a fractional crystallisation process.