baber/WOPTO huggingface dataset:
Patent TW-405149-B (TW)
Title: Etching method
Inventor: YAMADA NOBUHIRO
IPC: H01L21/3065
Filed: 1998-12-28
Granted: 2000-09-11
Abstract: Processing gas comprising C5F8, O2 and Ar achieving the flow ratio of 1<=(C5F8/O2)<=1.625 is supplied into a processing chamber 102 of etching device 100, and the pressure atmosphere thereof is set within the range of 45mTorr to 50 mTorr. Plasma is generated by applying RF power to a lower electrode 110 of the temperature of 20 DEG C to 40 DEG C on which a wafer W is put. A contact hole 210 is thereby formed on a SiO2 film 208 on the surface of a SiNx, film 206 which is formed on the wafer W by means of said plasma. With C5F8 and O2, the contact hole 210 can be formed which is nearly vertical to the SiO2 film 208. Moreover, the selection ratio of the SiO2 film 208 against the SiNx film 206 can be increased. As C5F8 is decomposed shortly after it is released into the atmosphere, it does not cause the greenhouse effect.
Patent TW-384416-B (TW)
Title: Parametric image stitching
Inventor: EDGAR ALBERT D
IPC: H04N1/12
Filed: 1999-02-22
Granted: 2000-03-11
Abstract: During electronic film development, an area of conventional photographic film is canned several times using a single scanning station, and at each subsequent time this scanned area is advanced incrementally along the film with multiple levels of overlap with previous scans. The new image scanned at each new time is aligned to an accumulating image that has been extrapolated to the image at the new time, and then the new image is added to the accumulating image in parametric summations that allow an image to be interpolated to any time free of seams where the scans overlap. The invention further teaches a method of steering the alignment by warping the leading edge of the alignment, and a registration method of aligning multiple images that takes advantage of known fixed alignments between images.
Patent TW-469580-B (TW)
Title: Trench etching method
Inventor: YUAN TIEN-MIN
IPC: H01L21/762
Filed: 1999-03-08
Granted: 2001-12-21
Abstract: The present invention is a trench etching method applied on a silicon substrate to fabricate a trench with vertical cross section. The silicon substrate comprises a mask layer. The etching method comprises the following steps: proceeding a first etching reaction, wherein the first etching reactant is a chrorine-containing gas mixture which has a faster etching rate to the silicon substrate than the mask layer, so as to form a trench with a vertical cross section; and proceeding a second etching reaction, wherein the second etching reactant is an oxygen-containing gas mixture for forming a vertical and symmetric trench bottom and a circular bottom structure.
Patent TW-408436-B (TW)
Title: The manufacture method of metal plug having passivation layer
Inventor: WANG JIAN-RUNG
IPC: H01L21/768
Filed: 1999-03-22
Granted: 2000-10-11
Abstract: A kind of manufacture method of metal plug having a passivation layer; firstly, provide the substrate having wiring or MOS device, and form the dielectrics on the substrate. Define the dielectrics to form the opening and expose part of the substrate. Form the barrier on the dielectrics and cover the exposed substrate. Form the metal layer on the barrier layer, and fill up the opening. Then, proceed back-etching and remove part of the metal layer, form the metal plug and make the height of the top of metal plug lower than the dielectrics. Then, form the passivation material layer on the barrier layer and metal plug, then proceed chemical mechanical polishing; remove part of the passivation material and part of the barrier layer to expose the dielectrics, and form the passivation layer on the metal plug.
Patent TW-588480-B (TW)
Title: IC card connector and IC card connector mounting structure
Inventor: UCHIYAMA ATSUSHI
IPC: G06K19/077
Filed: 1999-05-27
Granted: 2004-05-21
Abstract: According to the conventional IC card connector and the IC card connector mounting structure, since the paired projections 21f are formed on the housing 21, a difference occurs in height between the projections 21f when the housing 21 is put on the circuit board 23. The terminal portions 22b of the pin terminals 22 located on the associated side become largely spaced from the conductive pattern 24 and are therefore not soldered to the same pattern to a satisfactory extent. To solve the problem, a connector for an IC card is provided with a single support protrusion 1g on a lower wall 1c of a housing 1. Thereby, when the connector for an IC card is mounted on a circuit board 3, three points of the support protrusion 1g and at least two terminal portions 2b of a pin terminal 2 can support the connector. Thus, even when a height of the support protrusion 1g varies, the terminal portion 2b can be in proximity to a conductive pattern 4 without lifting up the terminal portions 2b, and secure soldering can be provided.
Patent TW-503438-B (TW)
Title: Method for protecting vacuum gauge
Inventor: CHEN SHR-SHIANG
IPC: H01L21/00
Filed: 1999-06-21
Granted: 2002-09-21
Abstract: A kind of method for protecting vacuum gauge is disclosed in the present invention. The invented method is suitable for use in a reaction chamber system. The reaction chamber system includes a reaction chamber that is connected with an air-extracting apparatus. An air-extracting valve and a throttle valve are used between the reaction chamber and the air-extracting apparatus to control the air pumping speed in the reaction chamber. The reaction chamber is connected with the vacuum gauge, and a delay value is disposed between the reaction chamber and the vacuum gauge. After a period of delay time from the beginning of opening the pumping valve to conduct the pumping process, the delay valve is opened so as to prevent the occurrence of reading shift for the measured air-pressure or shortening lifetime of the vacuum gauge caused by the contact of the vacuum gauge with too large air-pressure in the reaction chamber.
Patent TW-400264-B (TW)
Title: Carrier and polishing apparatus
Inventor: WANG SHIU-JIN
IPC: B24B37/30
Filed: 1999-06-30
Granted: 2000-08-01
Abstract: A carrier and a polishing apparatus are designed to improve the mass producibility of wafers while using a retainer ring formed by a soft material. A rubber sheet 4 is bonded to the bottom surface of a carrier body 2 of the carrier 1 to define a pressure chamber R, a retainer ring 13 formed by a soft material such as EG is bonded to the bottom surface of the sheet 4. A margin block 40 is provided projecting out from the bottom side of the sheet 4, and the thickness of the retainer ring 13 is set to be substantially equal to the sum of the thickness L1 of the margin block 40 and the thickness L2 of the wafer W.
Patent TW-466184-B (TW)
Title: Method and apparatus for laser imaging with multi-mode devices and optical diffusers
Inventor: SOUSA JOHN GARY
IPC: B23K26/06
Filed: 1999-10-07
Granted: 2001-12-01
Abstract: Multi-mode laser radiation is focused to a preselected spot size on a recording construction using a controlled-angle diffuser. The diffuser concentrates the radiation, counteracting the dispersive effects of multi-mode output.
Patent TW-475113-B (TW)
Title: Method for downloading program with microprocessor system
Inventor: WEN CHAN-JEN
IPC: G06F12/12
Filed: 1999-10-21
Granted: 2002-02-01
Abstract: The invention relates to a method for downloading program with microprocessor system, which can finish the program update action during updating program by a microprocessor without taking apart the system hardware. It provides a first memory as a program area used to store the program required for system execution, a second memory as a data area used to store the data required for program execution. The method of the invention comprises performing a first exchange of the functions of the two memories during the first timing; executing a downloading action to store the new version program in the first memory, and performing a second exchange of the functions of the two memories to achieve the objective of storing the new version program in the program area during the second timing.
Patent TW-432833-B (TW)
Title: Portable terminal device and on-vehicle data processor
Inventor: SEKIYAMA HIROAKI
IPC: H04B7/26
Filed: 1999-10-27
Granted: 2001-05-01
Abstract: The present invention relates to an on-vehicle information processor especially one that uses an on-vehicle machine and a portable terminal device to provide navigation information. A portable terminal and an on-vehicle device are combined such that effective navigation can be provided. The portable terminal 22 provided with communication function is connected with the on-vehicle information processing device 10 when placed on a cradle. The portable terminal transmits a destination to an information center, and shows obtained route data on a display 14 while transmitting the route data to the on-vehicle device 10 which outputs guidance speech from a speaker 18. On arriving near the destination, the on-vehicle information processing device 10 provides the portable terminal 22 with map data for the vicinity of the destination. A user can remove the portable terminal 22 from the cradle 24 and reach the destination while viewing a map shown on the display 14 of the portable terminal.
Patent TW-561133-B (TW)
Title: Process for treating aqueous solutions comprising bases and organic acids
Inventor: WIESE KLAUS-DIETHER DR
IPC: C02F1/469
Filed: 1999-10-28
Granted: 2003-11-11
Abstract: In the conventional processes for treating aqueous solutions comprising bases and organic acids, only one of the two constituents is ever removed from the solution. To remove the second constituent of the solution, additional process steps were necessary, which increased the technical complexity and financial expenditure considerably. The present invention therefore relates to a process for treating aqueous solutions comprising bases and organic acids by an electrochemical process. The process according to the invention is utilized, inter alia, for purifying reaction waters produced in the preparation of carbonyl compounds.
Patent TW-444460-B (TW)
Title: An efficient DTX scheme
Inventor: HAAKANSSON STEFAN
IPC: G10L25/78
Filed: 1999-11-24
Granted: 2001-07-01
Abstract: Techniques for discontinuous transmission (DTX) and fast in-band signaling of configuration changes and protocol messages in speech communications systems provide cost efficiency in terms of radio transmission capacity, in terms of fixed line transmission, and in terms of implementation effort. An exemplary method for performing discontinuous transmission (DTX) in a communications system in which source data is interleaved for transmission from a first component in the system to a second component in the system includes the steps of detecting periods of source data inactivity, and transmitting silence descriptor (SID) frames from the first to the second component during the periods of source data inactivity, certain of the transmitted SID frames being interleaved using a different interleaving algorithm as compared to that used for source data. For example, the source data can be block diagonally interleaved, and certain of the SID frames can be block interleaved. An exemplary method for effecting configuration changes in a communications system includes the step of transmitting an escape frame in place of a speech data frame, the escape frame including a gross bit pattern to distinguish the escape frame from speech data frames and conveying a configuration change indication. The escape frame can further include a data field to indicate a particular configuration change to be made. For example, where the communications system is an AMR system, an escape frame can be used to change an active coded mode ser. Alternatively, an escape frame can be used to change a phase of coded information.
Patent TW-477111-B (TW)
Title: Edge reflection type longitudinally coupled saw resonator filter and duplexer using the filter
Inventor: AGO JUNYA
IPC: H03H9/02
Filed: 2000-02-03
Granted: 2002-02-21
Abstract: An edge reflection type longitudinally coupled. SAW resonator filter includes a surface acoustic wave substrate having a first end surface and a second end surface which are arranged at opposite ends of the substrate. A plurality of edge reflection, longitudinally coupled resonator filter units are arranged on the surface acoustic wave substrate such that a surface acoustic wave is reflected between the first end surface and the second end surface of the surface acoustic wave substrate. A connecting conductive portion is arranged to electrically connect the plurality of the longitudinally coupled resonator filter units. Each of the longitudinally coupled resonator filter units has a plurality of interdigital transducers aligned in a surface acoustic wave propagating direction. The number of pairs of electrode fingers in the plurality of the longitudinally coupled resonator filter units is equal. In addition, a ratio of the numbers of pairs of the electrode fingers between the plurality of the interdigital transducers in at least one of the plurality of the longitudinally coupled resonator filter units is different from ratios of the numbers of pairs of the electrode fingers between the plurality of the interdigital transducers in the other longitudinally coupled resonator filter units.
Patent TW-556143-B (TW)
Title: Transmission method, device and liquid crystal display to reduce EMI intensity for liquid crystal display circuit
Inventor: CHEN YEN-CHEN
IPC: G09G3/36
Filed: 2000-02-03
Granted: 2003-10-01
Abstract: There is provided a transmission method to reduce EMI intensity for liquid crystal display circuit. The liquid crystal display circuit includes: a pixel array; a clock signal generating device for providing clock signals to the liquid crystal display circuit; a data generating device for providing a plurality sets of data; and a driving circuit having a plurality of driving units, each receiving a corresponding one of the plurality sets of data from the data generating device and also receiving a clock signal from the clock signal generating device for driving the pixel array. The transmission method is characterized that the clock signal generating device is able to generate a plurality of clock signals, wherein each clock signal varies with time within 5% bandwidth at the predetermined center frequency, and any two adjacent driving units use different clock signals.
Patent TW-457686-B (TW)
Title: Integrated semiconductor-circuit arrangement with stabilized conductive-tracks
Inventor: FEURLE ROBERT
IPC: H01L23/528
Filed: 2000-02-11
Granted: 2001-10-01
Abstract: This invention relates to an integrated semiconductor-circuit arrangement with stabilized conductive-tracks (11 to 15; 22) that extend in different planes. Some critical positions, which are determined by the layout, of the conductive-tracks (11 to 15) are provided with Dummy-contacts (16 to 20).
Patent TW-491006-B (TW)
Title: Electronic parts insertion head and electronic parts insertion device
Inventor: KOBAYASHI MASAYOSHI
IPC: H05K13/04
Filed: 2000-03-17
Granted: 2002-06-11
Abstract: A parts insertion head comprises a supporting block, an insertion guide movable between first and second positions with respect to the supporting block, insertion guide moving means for moving the insertion guide between the first and second positions, and electronic parts pressing means for inserting a lead wire of an electronic part into an attaching hole of a printed wiring board by applying force to the electronic parts. The parts insertion head further comprises a cam capable of changing its position, a cam follower arranged in the insertion guide and moved in contact with the cam at a moving time of the insertion guide, and a mechanism for changing the position of the cam. A movement locus of the insertion guide can be changed by changing the position of the cam.
Patent TW-541233-B (TW)
Title: Method and apparatus for endpoint detection for chemical mechanical polishing
Inventor: BIBBY THOMAS F A JR
IPC: B24B37/04
Filed: 2000-09-19
Granted: 2003-07-11
Abstract: An apparatus to generate an endpoint signal to control the polishing of thin films on a semiconductor wafer surface includes a through-hole in a polish pad, a light source, a fiber optic cable, a light sensor, and a computer. A pad assembly includes the polish pad, a pad backer, and a pad backing plate. The pad backer includes a pinhole and a canal that holds the fiber optic cable. The pad backer holds the polish pad so that the through-hole is coincident with the pinhole opening. A wafer chuck holds a semiconductor wafer so that the surface to be polished is against the polish pad. The light source provides light within a predetermined bandwidth. The fiber optic cable propagates the light through the through-hole opening to illuminate the surface as the pad assembly orbits and the chuck rotates. The light sensor receives reflected light from the surface through the fiber optic cable and generates reflected spectral data. The computer receives the reflected spectral data and calculates an endpoint signal. For metal film polishing, the endpoint signal is based upon the intensities of two individual wavelength bands. For dielectric film polishing, the endpoint signal is based upon fitting of the reflected spectrum to an optical reflectance model to determine remaining film thickness. The computer compares the endpoint signal to predetermined criteria and stops the polishing process when the endpoint signal meets the predetermined criteria.
Patent TW-459308-B (TW)
Title: Semiconductor device having conductive layer within field oxide layer and method for forming the same
Inventor: HEO YEON-CHEOL
IPC: H01L21/76
Filed: 2000-03-31
Granted: 2001-10-11
Abstract: A method for forming a semiconductor device having a field oxide layer for isolating elements from each other, wherein the semiconductor device contains a field region and an active region, the active region having a junction region and a channel region, includes the steps of: (a) providing a semiconductor structure having a trench in the field region; (b) forming a first field insulating layer into the trench; (c) forming a conductive layer on the first field insulating layer to fill a predetermined portion of the trench; and (d) forming a second field insulating layer on the conductive layer to fill the remaining portion of the trench, thereby reducing an influence of an electric field caused by a potential difference between a semiconductor substrate and a junction region.
Patent TW-I286133-B (TW)
Title: Process for preparing 2-phenyl-3-aminopyridine, substituted phenyl derivatives thereof, and salts thereof
Inventor: BRAISH TAMIM F
IPC: C07D213/75
Filed: 2000-05-11
Granted: 2007-09-01
Abstract: A process for preparing 2-phenyl-3-aminopyridine, and substituted phenyl derivatives and salts thereof. A compound of the formula, is reacted with a compound of the formula, in a reaction inert solvent in the presence of a base and a palladium catalyst to obtain a compound of the formula. Preferably, the compound of formula III or VIII is prepared by reacting a compound of the formula, with a compound of the formula, in a reaction inert solvent. The compound of formula V is preferably deprotected in aqueous acid to obtain a salt of compound X. X, Y, Z, Ar, R1, R2, R3, R4 and R5 are as defined herein.
Patent TW-553968-B (TW)
Title: Soft, elastic polyurethane films, process for the production thereof and their use
Inventor: KAUFHOLD WOLFGANG
IPC: C08G18/44
Filed: 2000-07-10
Granted: 2003-09-21
Abstract: The invention relates to soft, elastic thermoplasic polyurethane films having improved properties, which are produced by sintering pulverulent thermoplastic polyurethanes with the aid of a tempered mould, a process for their production and their use. A thermoplastic polyurethane film prepared by a process comprising sintering in a heated mould at least one pulverulent thermoplastic polyurethane (TPU) characterized by having a melt index, at 190 DEG C and under applied weight of 21.2N, of 20 to 100, relative solution viscosity of 1.15 to 1.45 and Shore hardness of 80 to 98.
Patent TW-510890-B (TW)
Title: The inorganic anti-microbial agents and preparing method thereof
Inventor: LI CHING-JIUN
IPC: B01D9/02
Filed: 2000-08-31
Granted: 2002-11-21
Abstract: This invention relates to the inorganic anti-microbial agents, which comprising the dehydrated MgC12 with high surface area and silver ions. This anti-microbial agents is prepared by dissolving, impregnating and coprecipitating the dehydrated MgC12 and silver nitrate in solvent. The anti-microbial agents can be used in the processing field of LDPE, LLDPE, HDPE, mPE, EVA and copolymer thereof, give the stable anti-microbial effects.
Patent TW-571239-B (TW)
Title: Branch instruction for multithreaded processor
Inventor: WOLRICH GILBERT
IPC: G06F9/32
Filed: 2000-10-18
Granted: 2004-01-11
Abstract: A parallel hardware-based multithreaded processor is described. The processor includes a general purpose processor that coordinates system functions and a plurality of microengines that support multiple hardware threads or contexts. The processor also includes a memory control system that has a first memory controller that sorts memory references based on whether the memory references are directed to an even bank or an odd bank of memory and a second memory controller that optimizes memory references based upon whether the memory references are read references or write references. Instructions for switching and branching based on executing contexts are also disclosed.
Patent TW-478017-B (TW)
Title: Semiconductor manufacturing device, and method of heating wafer in semiconductor manufacturing device
Inventor: KAWAI ICHIRO
IPC: H01L21/205
Filed: 2000-09-14
Granted: 2002-03-01
Abstract: This invention provides a substrate heating method for manufacturing semiconductor device and semiconductor manufacturing device. When carrying out heat treatment of a wafer (substrate) by a heat treatment apparatus, the wafer is initially transferred into a process chamber so as to be held by a substrate supporting member. Subsequently, a processing gas is supplied to a space on the wafer surface side within the process chamber, and an oxygen-containing gas is supplied to a closed space on the back side of wafer. Also, while the wafer is rotated, a plurality of heating lamps are lit. Then, the temperature of the wafer rises and, when it reaches a predetermined temperature, an oxidized film SiO2 is formed on the back face of the wafer. Consequently, the external diffusion from the back face of the wafer such as the sublimation of SiO or occurrence of phosphorus is reduced. Therefore, the stability in temperature measurement can be maintained.
Patent TW-455988-B (TW)
Title: Method of manufacturing semiconductor device
Inventor: TOKUSHIGE NOBUAKI
IPC: H01L21/316
Filed: 2000-09-27
Granted: 2001-09-21
Abstract: A method of manufacturing a semiconductor device comprises the steps of: (a) forming a first oxide film and a first silicon nitride film on a surface semiconductor layer of an SOI substrate, the SOI substrate comprising the surface semiconductor layer formed on a support substrate with the intervention of a buried insulating film; (b) patterning the first silicon nitride film into a desired shape and performing a first LOCOS oxidization using the thus patterned first silicon nitride film as a mask to form a first LOCOS oxide film in a region for device isolation in the surface semiconductor layer; c selectively removing the first LOCOS oxide film, (d) forming sidewall spacers of a second silicon nitride film on sidewalls of the first silicon nitride film and the first oxide film; (e) performing a second LOCOS oxidization using the first silicon nitride film and the sidewall spacers as a mask to form a second LOCOS oxide film which is thinner than the first LOCOS oxide film; and (f) removing the first and second silicon nitride films.