Patent SG-11201809012P-A (SG)
Title: Etch mask for hybrid laser scribing and plasma etch wafer singulation process
Inventor: LI WENGUANG
IPC: H01L21/78
Filed: 2017-04-27
Abstract: INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property 1#11101111 011101011M 0101111 1 0 I 1111111111H1001111111011111011110111111 Organization International Bureau (10) International Publication Number (43) International Publication Date .....0\"\" WO 2017/196549 Al 16 November 2017 (16.11.2017) WIPO I PCT (51) International Patent Classification: Common, Fremont, California 94536 (US). EATON, Brad; HO1L 21/78 (2006.01) H01L 21/3065 (2006.01) 563 8th Avenue, Menlo Park, California 94025 (US). KU- HO1L 21/76 (2006.01) MAR, Aj ay; 10457 Manzanita Court, Cupertino, California (21) International Application Number: 95014 (US). LERNER, Alexander N.; 6661 Pebblewood PCT/US2017/029958 Court, San Jose, California 95120 (US). (22) International Filing Date: (74) Agent: BERNADICOU, Michael A. et al.; BLAKELY 27 April 2017 (27.04.2017) SOKOLOFF TAYLOR & ZAFMAN LLP, 1279 Oakmead Parkway, Sunnyvale, California 94085 (US). (25) Filing Language: English (81) Designated States (unless otherwise indicated, for every (26) Publication Language: English kind of national protection available): AE, AG, AL, AM, (30) Priority Data: AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, 15/154,790 13 May 2016 (13.05.2016) US CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, (71) Applicant: APPLIED MATERIALS, INC. [US/US]; HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, 3050 Bowers Avenue, Santa Clara, California 95054 (US). KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, (72) Inventors: LI, Wenguang; 616 Santa Rita Drive, Milpi- PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, tas, California 95035 (US). PAPANU, James S.; 351 Hol- SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, ly Drive, San Rafael, California 94903 (US). KRISHNA-TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. MURTHY, Ramesh; 267 Loucks Avenue, Los Altos, Cali- fornia 94022 (US). KUMAR, Prabhat; 38425 Crosspointe = (54) Title: ETCH MASK FOR HYBRID LASER SCRIBING AND PLASMA ETCH WAFER SINGULATION PROCESS = FLOVVCHART ILO — = = 102 = = FORM A MASK ABOVE A 85MICONDUCTOR WAFER. THE MASK INCLUDING WATER-SOLUBLE MATRIX BASED ON A SOLID COMPONENT AND WATER, AND A PLURALITY OF PARTICLES = DISPERSED THROUGHOUT THE WATER-SOLUBLE M ATRX, — WHEREIN A RATIO OF WEIGHT % OF THE SOLID COMPONENT TO WEIGHT % OF THE PLURALITY OF PARTICLES IS = — APPROXIMATELY IN THE RANGE OF 1.0.1 - 1:4 = 104 = 1 PATTERN THE MASK WITH A LASER SCRIBING PROCESS --`-} = \.. = = V C PLASMA ETCH THE SEMICONDUCTOR WAFER THROUGH THE '''' GAPS IN THE PATTERNED MASK TO SINGULATE THE 106 ----\"--/ = — INTEGRATED CIRCUITS ‘,... = 1-1 cr, ii- FIG.1 kr) 01 (57) 1-1 : Etch masks and methods of dicing semiconductor wafers are described. In an example, an etch mask for a wafer ---- singulation process includes a water-soluble matrix based on a solid component and water. The etch mask also includes a plurality of IN ,_ 1 particles dispersed throughout the water-soluble matrix. The plurality of particles has an average diameter approximately in the range © of 5-100 nanometers. A ratio of weight % of the solid component to weight % of the plurality of particles is approximately in the N range of 1:0.1 - 1:4. C [Continued on next page] WO 2017/196549 Al MIDEDIMOMOIDEIROIDEMOMOHEIHINIME101111111111111111111 (84) Designated States (unless otherwise indicated, for every kind of regional protection available): ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG). Published: — with international search report (Art. 21(3))