baber/WOPTO huggingface dataset:
Patent TW-506925-B (TW)
Title: Packing device
Inventor: KODAMA MASAAKI
IPC: B65B9/06
Filed: 2000-12-14
Granted: 2002-10-21
Abstract: A packing device comprises: a roll holding portion 21, rotationally supporting original film roll 1A; guide portion 10, guiding a film 1 pulled out from the original film roll 1A; a former 12, the folded film 1 pulled out by the guide portion 10, one end of which is made as a cylindrical bag, and the other end of which remains free open in order to form a supplier 11 in the film 1, supplied by a package 3; a conveying device 4, through the supplier 11 supplying the free open end of the film 1 of the package 3, to convey intermittently through a pair of clamp rolls 4A; a center seal device 2, installed along a film moving out side of the conveying device 4 of the a forming portion 12, used to seal closing the free open end of the cylindrical film 1; end joint device 6, jointing the cylindrical film and the direction of the film conveying, which are perpendicular to each other; a cutting device 7, for cutting packing bag 5 of the package 3 in order formed by the center seal device 2 and the end joint device 6, the center seal device 2, which pressurization clamp the free open end of the cylindrical film, one end of which conveyed by the conveying device 4 and the other end of which heat sealing of clamp seal device, in front and back of the direction of the film conveying of the center seal device, respectively, installed the above mentioned a pair of clamp rolls 4A, pressuring the film of clamp pressurization 8 of the center seal device, setting at the stop moment of the conveying device 4 as wish.
Patent TW-519577-B (TW)
Title: Color filter producing method and apparatus
Inventor: AKAHIRA MAKOTO
IPC: B41J2/01
Filed: 2001-02-20
Granted: 2003-02-01
Abstract: Disclosed are color filter producing method/apparatus for producing a color filter by ejecting onto a substrate ink from an ink-jet head having a plurality of nozzles arranged substantially in a first direction while relatively scanning the ink-jet head and the substrate in a second direction substantially perpendicular to the first direction, so that filter elements adjacent in the second direction may be colored to have different colors. In the method/apparatus, before the coloring, landing locations for the plural ink dots to be ejected to color the filter elements, are measured and based on the measurement results, ejection timings for the plural nozzles are adjusted so that the plural ink dots land along the center line of each of the filter elements in the first direction. Therefore, it is possible to provide a color filter producing method whereby, during the production of a color filter using the ink-jet method, the occurrence of color mixing can be reduced, and to provide an apparatus therefor.
Patent TW-477029-B (TW)
Title: Method of reducing thick film stress of spin on dielectric and the resulting sandwich dielectric structure
Inventor: YE CHING-FA
IPC: H01L21/316
Filed: 2001-02-21
Granted: 2002-02-21
Abstract: The present invention provides a technique to reduce a stress of thick spin on dielectric layer by forming a sandwich dielectric structure, wherein a first dielectric layer is formed on a substrate by spin coating, a liquid phase deposited (LPD) silica layer is formed the first dielectric layer, and a second dielectric layer is formed on the LPD silica layer. The LPD silica layer can be further subjected to a nitrogen plasma treatment to enhance its thermal stability and anti-water penetration ability.
Patent TW-472297-B (TW)
Title: Method to prevent coating defect in photoresist
Inventor: GAU YAU-HUAN
IPC: H01L21/02
Filed: 2001-03-23
Granted: 2002-01-11
Abstract: This invention provides a method to reduce the occurrence of defects on wafer during photo resist coating. A leading tube is installed in the cup of photo resist coating platform to transport photo resist cleaning solvent. When the wafer chuck is moving up, the photo resist cleaning solvent injection mechanism is activated to inject the photo resist cleaning solvent in the leading tube. The solvent is allowed to flow though a plural number of holes to wet the cup. The solvent is stopped injecting in the leading tube when the wafer chuck is lowered down for resist coating.
Patent TW-512585-B (TW)
Title: Crystal oscillator with peak detector amplitude control
Inventor: JANSSON LARS GUSTAF
IPC: H03L5/00
Filed: 2001-04-19
Granted: 2002-12-01
Abstract: A crystal oscillator apparatus is described that has a wide dynamic frequency range and that is capable of supporting a broad range of crystal types. The present invention reduces the unwanted side effects that are associated with the prior art crystal oscillator designs, such as the clipping of signals, the introduction of signal distortion and unwanted signal harmonics. The present invention reduces the total wasted loop gain of the oscillator while also reducing the amount of integrated circuit real estate required to implement the crystal oscillator. The crystal oscillator apparatus of the present invention preferably comprises a crystal resonator circuit, and inverting amplifier, a bias circuit, a reference circuit, and a peak detector circuit. The present invention takes advantage of Automatic Gain Control (AGC) design techniques. The gain of the present crystal oscillator is automatically regulated using a closed loop circuit design. The present invention advantageously utilizes a peak detector circuit in combination with a reference circuit. The peak detector compares a reference signal with an amplified and inverted oscillation signal produced by a crystal resonator, and generates a feedback signal as a result of the comparison. The feedback signal controls a bias circuit that, in turn, controls the amplified inverted oscillation signal. The preferred embodiment of the present invention preferably comprises MOSFETs, resistors and capacitors implemented on a single integrated circuit device. By implementing the present inventive crystal oscillator on a single integrated circuit device, the deleterious effects introduced by temperature variations are advantageously reduced or nullified. The inventive crystal oscillator reduces risks of overdriving the crystal resonator and thereby producing undesirable signal harmonics. Variations in crystal Q can be very large, advantageously permitting use of low cost crystals. Furthermore, by controlling the amplitude of the oscillation signal generated by the crystal oscillator, the reliability of the crystal oscillator is also increased.
Patent TW-507168-B (TW)
Title: Capacitive bio-metric sensor
Inventor: GRESHITZ MANFRED
IPC: G06F3/0354
Filed: 2001-04-19
Granted: 2002-10-21
Abstract: To determine the maximum contrast of the gray-density value that can be attained practically in application, especially for a finger-press-type sensor (dynamic resolution of the sensor), on the sensor-array (2) at least one measure-point (4) composed of a dielectric material is integrated above each one of the sensor-electrodes (5).
Patent TW-552784-B (TW)
Title: Method and apparatus for communication using pulse decoding
Inventor: JOE JURIANTO
IPC: H04L27/02
Filed: 2001-04-25
Granted: 2003-09-11
Abstract: A signal of any physical form corresponding to an information character of an encoding alphabet, is transmitted as an analog waveform defining a symbol, the waveform being cyclical at the symbol rate, to a communication channel and then the signal when received by a receiver is converted to groups of pulses separated by silences, wherein each group of pulses maps to a count corresponding to a character of the encoding alphabet. The groups of pulses are separated by silences of arbitrary duration which are greater than the time between individual pulses. The pulses have a pulse rate greater than the frequency of the symbol. The system permits but does not require communication of relatively narrow bandwidth signals.
Patent TW-546574-B (TW)
Title: Electronic transaction server, client for seller, client for purchaser, and method of electronic transaction
Inventor: ISHIMI MUNEHIKO
IPC: G06Q30/06
Filed: 2001-07-06
Granted: 2003-08-11
Abstract: An ownership of a cargo is electronized without electronizing a bill of lading and the ownership of the cargo is transferred in accompanied with a legal effect, thereby improving efficiency of a commerce procedure. A user registration processing unit 32 registers user registration information 40 including a public key certificate which each party obtained from an authentication agency having jurisdiction over the party himself into a database 38 in response to requests from the parties to a commerce including a seller, a buyer, and a transportation trader. On the basis of a change registration request of the party accompanied by a digital signature and a public key certificate, a transfer registration processing unit 34 changes a person who has an ownership of cargo information 42 registered in the database 38 to another party at the start of a transaction. A verification processing unit 36 verifies the fact that the digital signature annexed to the change registration request has been made by a secret key serving as a pair of the public key certificate registered in the database 40, and concludes a transfer registration having a legal vigor when a consent of a partner destination is obtained.
Patent TW-I236313-B (TW)
Title: Package structure of organic electro-luminescence component having absorbent disposing trough
Inventor: TANG SHUENN-JIUN
IPC: H05B33/04
Filed: 2001-07-16
Granted: 2005-07-11
Abstract: The present invention discloses a novel package structure of organic electro-luminescence component, comprising a substrate; an organic electro-luminescence component connecting to a surface of the substrate; a hermetic seal having a rim with a plurality of troughs; a plurality of absorbents disposed in the plurality of troughs; and an adhesive disposed on the rim wherein the hermetic seal connects its rim to the predetermined location on the substrate by the adhesive.
Patent TW-I233925-B (TW)
Title: A process for the preparation of alpha' chloroketones
Inventor: KRONENTHAL DAVID R
IPC: C07C271/18
Filed: 2001-08-10
Granted: 2005-06-11
Abstract: The present invention relates to a process for the preparation of alpha' chloroketones, such as 4-phenyl-3-t-butyloxy-carbonylamino)-2-keto-l-chlorobutane by reacting certain aryl amino acid esters, e.g. N-(2-t-butoxycarbonyl)-L-phenylalanine-4-nitrophenyl ester, with a sulfur ylide compound to form the corresponding keto ylide compound which is then treated with a source of chloride and an organic acid.
Patent TW-548587-B (TW)
Title: Apparatus and method for data processing and computer program product
Inventor: SYMES DOMINIC HUGO
IPC: G06F7/50
Filed: 2001-08-29
Granted: 2003-08-21
Abstract: A data processing system is provided with an instruction (ADD8TO16) that unpacks non-adjacent portions of a data word using sign or zero extension and combines this with a single-instruction-multiple-data type arithmetic operation, such as an add, performed in response to the same instruction. The instruction is well suited to use within systems having a data path (2) including a shifting circuit (6) upstream of an arithmetic circuit (8).
Patent TW-523957-B (TW)
Title: Cathode active material, non-aqueous electrolyte cell and methods for preparation thereof
Inventor: SATO ATSUSHI
IPC: H01M10/05
Filed: 2001-10-05
Granted: 2003-03-11
Abstract: A non-aqueous electrolyte cell in which the allowable range of starting materials for synthesis left in a cathode active materialis prescribed in order to realize satisfactory cell characteristics. The non-aqueous electrolyte cell includes a cathode containing a cathode active material, an anode containing an anode active material, and a non-aqueous electrolyte, in which the cathode active material is mainly composed of a compound represented by the general formula LixFePO4, where 0 < x ≤ 1, with the molar ratio ofLi3PO4 to a compound represented by the general formula LixFePO4 to the compound represented by the general formula LixFePO4, which ratio is represented by Li3PO4/LiFePO4, being Li3PO4/LixFePO4 ≤ 6.67x10<SP>-2</SP>.
Patent TW-506073-B (TW)
Title: Manufacturing method for dual damascene
Inventor: MA CHING-TIAN
IPC: H01L21/768
Filed: 2001-10-18
Granted: 2002-10-11
Abstract: A manufacturing method for dual damascene is provided, which includes the following steps: after etch back on the first photoresist layer, conducting the deep ultra violet curing (DUV curing) on the first photoresist layer in the via hole to cure the first photoresist layer in place of the conventional process of photoresist thermal curing; after the deep ultra violet curing of the first photoresist, conducting the etching on the trench structure, which can prevent the interaction with the second photoresist layer in the following process to improve the interference from the residual photoresist scumming and fence in the etch back process.
Patent TW-565527-B (TW)
Title: Escalator with step flange
Inventor: HAUER UWE
IPC: B66B23/02
Filed: 2001-11-13
Granted: 2003-12-11
Abstract: An escalator system includes a protective flange assembly along edges of the steps having step flanges. In one example, a first step flange member is adjacent each edge of each step and moves with the step along the escalator path. The first panel member remains stationary relative to the step along the entire path. A second panel member is associated with a corresponding link in the drive chain and remains stationary relative to the link along the entire path of the escalator. The first panel members and second panel members cooperate to provide a continuous barrier along each edge of the steps along the escalator path.
Patent TW-523841-B (TW)
Title: Bumpless semiconductor device
Inventor: NAKAMURA MASAYUKI
IPC: H01L23/12
Filed: 2002-02-05
Granted: 2003-03-11
Abstract: The subject of the present invention is that, when bonding the semiconductor device such as IC chips on the circuit substrate with flip-chip method, it is not necessary to form the bumps on the semiconductor device to eliminate the short circuits, reduce the bonding cost, eliminate the stress concentration at the bonding portion, and reduce the damage to the IC chips and circuit substrate, so as to bond the IC chip with the circuit substrate in high reliability and low cost. The solution is to bond the conductive particles 4 by metal bonding on the electrode pad 2 of the bumpless semiconductor device with the electrode pad 2 configured on the surface, and with the periphery of the electrode pad 2 configured with passivation layer 3. The conductive particles 4 are the composite particles used to form the metal plating layer on the surface of the resin particles. The bumpless semiconductor device is manufactured with the following processes (a) and (b), wherein (a) a process for electrostatic attachment of conductive particles on one side of the substrate; and, (b) a process of overlapping the electrode pad surface of the bumpless semiconductor device (with the surface configured with electrode pad, and the periphery of the electrode pad configured with passivation layer) with the conductive particle attachment surface of the substrate for supersonic bonding, so that the conductive particles are metal bonded with the electrode pad, and transferred from the substrate to the electrode pad.
Patent TW-516191-B (TW)
Title: Bump process
Inventor: LI JIN-YUAN
IPC: H01L23/00
Filed: 2002-02-22
Granted: 2003-01-01
Abstract: A bump process suitable for make bump on the wafer is disclosed. First, at least a conductive layer is formed on the wafer active surface. Then an electro-plating method is used to form at least a solder block whose position corresponds to the wafer bonding pad position. Second, a flux is sprayed on the conductive layer and solder block and reflow step is conducted to let the solder block melt and cool to form a bump. Then the flux is removed. Finally, a part of the conductive layer not under the bump is removed, which concurrently cleans up the flux residue on the conductive layer. When the number of the conductive layer is not only one, the conductive layer with wettable surface has to be removed first to keep the conductive layer with non-wettable surface. Therefore, the solder block collapse will not happen during the solder block reflow.
Patent TW-565887-B (TW)
Title: Water and method for storing silicon wafer, water for showering silicon wafer, and method for producing silicon mirror surface wafer
Inventor: ABE TATSUO
IPC: H01L21/304
Filed: 2002-03-14
Granted: 2003-12-11
Abstract: There is provided a storage water of a silicon wafer in which a liquid temperature of the storage water is 0 to 18 DEG C. And there is provided a shower water of a silicon wafer in which a liquid temperature of the shower water is 0 to 18 DEG C. The wafer is stored in the storage water, and showered using the shower water. The present invention also relates to a method for storing silicon wafer in which the silicon wafer is showered using a shower water of which liquid temperature is 0 to 18 DEG C and is then stored in liquid using a storage water of which liquid temperature is 0 to 18 DEG C. Thereby, there can be provided a water for storing a silicon wafer, a method for storing it, a water for showering it and a method for showering it in which degradation of the wafer quality can be prevented.
Patent TW-550845-B (TW)
Title: Electric energy storage system
Inventor: LEE HEE-YOUNG
IPC: H01M10/30
Filed: 2002-03-13
Granted: 2003-09-01
Abstract: An electric energy storage system having a novel structure which exhibits a ling cycle life, rapid charging-discharging characteristics and a high energy density. The electric energy storage system comprises: an anode comprised of a first material that performs interalation-deintercalation of cation as an anode active material; a cathode comprised of a second material that may form an electric doublelayer with anion as a cathode active materials; and an electrolyte including lithium salt, the electrolyte including the cation and anion. Due to a high difference between anode and cathode in capacity to store the electric energy, most electrochemical impact that occurs in the process of intercalation-deintercalation of electric energy is absorbed into cathode and active material used for anode is activated carbon having a very high resistance to electrochemical and structural impact, so that its operation life is elongated and it has rapid charging-discharging characteristics. The electric energy storage system can complement the defects of a conventional technology.
Patent TW-I279205-B (TW)
Title: Seat
Inventor: FUJITA ETSUNORI
IPC: B60N2/70
Filed: 2002-04-16
Granted: 2007-04-21
Abstract: A seat comprises a seat frame and cushion material including a three-dimensional net that is supported by the seat frame and formed by bonding a pair of mutually separate grand weaves with interlocking threads. The cushion material includes a first part, which has a value substantially equal to elastic compliance of a part of an occupant's body that presses the cushion material, and a second part, which has a value larger than the value of the elastic compliance of the first part, as elastic compliance characteristics when a reactive force operates at the time the occupant is seated in the seat. Thus, a thin and lightweight seat can be provided, seating comfort is improved by easing load intensity under the tuber ischiadicum, numbness resulting from sitting in the seat for a long period of time is reduced, and vibration transmission characteristics can be improved.
Patent TW-I243343-B (TW)
Title: Image processing system and method of scaling a keyed image
Inventor: ROEVER JENS A
IPC: H04N5/275
Filed: 2002-06-28
Granted: 2005-11-11
Abstract: The color-keyed regions of a color-keyed image are extracted from the color-keyed image, and the color-keyed regions and the non-color-keyed regions are independently scaled. The independently scaled regions are subsequently merged to form a scaled color-key image with clearly distinguished color-keyed regions and non-color-keyed regions. To minimize the blurring of edges in the non-color-key regions, the non-color-key colors are extended into color-keyed regions after the color-keyed information is extracted from the color-keyed image. To minimize the encroachment of the scaled color-keyed regions into the scaled non-color-keyed regions of the scaled color-key image, the edges of the scaled color-key regions are sharpened by defining the color-keyed region as the region wherein each scaled/filtered color-key value exceeds a non-zero threshold value. To facilitate the use of existing memory and structure in images that are encoded using three components per pixel, such as RGB, YUV, etc., the extracted color-keyed regions are stored in the memory structure that is typically used to store an optional fourth component, such as a transparency or texture parameter.
Patent TW-526700-B (TW)
Title: Heat sink and its manufacturing method
Inventor: WU CHUEN-FU
IPC: H05K7/20
Filed: 2002-07-26
Granted: 2003-04-01
Abstract: The present invention provides a heat sink that includes a plurality of assembling units. Each assembling unit has a thin fin and a thicker jointing base. The jointing base of one of the assembling units is tightly contacted with the jointing base of another adjacent assembling unit. Therefore, the fins of each assembling unit are spaced with each other and arranged in parallel. The manufacturing method comprises utilizing a punching process to continuously punch and form a plurality of connected assembling units on a metal material belt; cutting and separating the assembling units on the metal material belt; and finally taking a number of assembling units as required to align every two jointing bases of the assembling units and then applying pressure to assemble them, so that the assembling unit are jointed and fixed with each other thereby forming a complete heat sink.
Patent TW-561610-B (TW)
Title: Semiconductor device and manufacturing method thereof
Inventor: SHIMOOKA YOSHIAKI
IPC: H01L21/822
Filed: 2002-10-22
Granted: 2003-11-11
Abstract: A semiconductor device comprises a signal line 17 and a differential signal line 13. The signal line 17 and the differential signal line 13 are formed on a semiconductor substrate 10. An expected frequency signal f0 is transmitted through the signal line 17. A signal with a reverse phase of the frequency signal is transmitted through the differential signal line 13 or connected to the ground. The signal line and the differential line are laminated almost in parallel through an insulating layer 15. When the differential signal line does not exit, let a resistance component, an inductance component and a capacitance component be per unit length R, L and C respectively, an actual length of signal line l is longer than a line length l0 calculated by the following equation.
Patent TW-I268613-B (TW)
Title: Method of manufacturing a thin film transistor
Inventor: TANADA YOSHIFUMI
IPC: H01L29/786
Filed: 2002-11-28
Granted: 2006-12-11
Abstract: A method of manufacturing a semiconductor device characterized by its high-speed operation and high reliability is provided in which a semiconductor layer crystallized by a CW laser is used for an active layer of a TFT. When a semiconductor layer is crystallized by a CW laser, one part is formed of large crystal grains whereas another part is formed of microcrystals due to the width-wise energy density distribution. The former exhibits excellent electric characteristics. The latter has poor electric characteristics because grain boundaries hinder movement of electric charges, and therefore causes inconveniences when used as an active layer of a transistor. Accordingly, circuits are arranged such that a semiconductor layer formed of large crystal grains is used for the active layer of every TFT.