baber/WOPTO huggingface dataset:
Patent TW-492060-B (TW)
Title: Method and apparatus for plasma cleaning of workpieces
Inventor: LIU LIANJUN
IPC: B08B7/00
Filed: 2001-04-24
Granted: 2002-06-21
Abstract: A method and apparatus for plasma cleaning a workpiece (W) in a plasma-cleaning chamber (20) having an interior region (30). The method comprises the steps of first, loading the workpiece into the plasma cleaning chamber interior region. The next step is pumping down the plasma cleaning chamber interior region down to a pre-determined pressure, with hydrogen as the ambient gas. The next step is forming from the hydrogen gas a plasma (36) having an ion density in the range between 10<SP>10</SP> and 10<SP>13</SP> cm<SP>-3</SP> and an ion energy lower than 30 eV. The last step is exposing the workpiece to the plasma for a predetermined time. The apparatus of the present invention preferably includes first and second vacuum processing chambers (20 and 120), wherein the first chamber performs the plasma cleaning of the workpiece according to the method of the invention, and the second chamber performs an additional process step, e.g., depositing a metal.
Patent TW-I245703-B (TW)
Title: Method for manufacturing oriented strand boards
Inventor: WANG SONG-YUNG
IPC: B32B21/14
Filed: 2001-06-13
Granted: 2005-12-21
Abstract: The present invention relates to a method for manufacturing oriented strand boards, comprising the steps of: cutting the recycled wooden building material into wooden boards; polishing the wooden boards and cutting them into small pieces with a fixed size; soaking the small pieces in cold water for a period of time; cutting the small pieces horizontally into long slices having a regular shape and high length-width ratio and low thickness by a cutting machine; drying the long slices in a drying machine; soaking the long slices in phenolic formaldehyde resin of proper concentration so as to raise the resin content of the long slices; drying the long slices until the phenolic formaldehyde resin is half-hardened; orienting the long slices parallel on a lining board by a mechanical positioning device; and forming oriented strand boards through a heat seal machine by covering the sheet surface with another lining board. After pre-soaking the regularly shaped long slices in phenolic formaldehyde resin and processing with oriented board-forming treatment, the static bending strength property, abrasion resistance, internal bond strength, and water resistance of the oriented strand boards can be increased.
Patent TW-593170-B (TW)
Title: Method for purification treatment of float medium bio-film by level control
Inventor: LI SHAU-HUAI
IPC: C02F3/02
Filed: 2001-06-15
Granted: 2004-06-21
Abstract: A method for purification treatment of a float medium bio-film by level control mainly comprises using the interaction of buoyancy and gravity to enable the float medium to perform a self-aggregation and integration to form an immobilized bio-film filtration layer; through adjusting the water level in the reaction tank, selecting a drip filtration process, a contact oxidation process, or a combination of the two, and controlling the water level in the reaction tank, to enable an upward/downward movement of the float medium layer. The float medium forms dislocated movements due to disturbance from carrier articles during the movement process so that the bio-film, impurities, etc. adhered thereto are easily peeled off, thereby reducing the opportunity of blockage. The present invention provides breakthrough on limits on the applications of medium bio-film, difficult in deep layering, etc., as well as provides other benefits.
Patent TW-548831-B (TW)
Title: Semiconductor device and method of manufacturing same
Inventor: MAEDA SHIGENOBU
IPC: H01L21/336
Filed: 2001-07-02
Granted: 2003-08-21
Abstract: Provided are a semiconductor device that optimizes the operation characteristics such as of both an insulating gate type transistor for high voltage and an insulating gate type transistor for low voltage, and a method of manufacturing the same. Specifically, a patterned resist (25) is formed so as to cover a low voltage operation region (A2), a second LDD implantation process of implanting an impurity ion (14) by using the resist (25) as a mask, is performed over a silicon oxide film (6) thereby to form an impurity diffusion region (13) in the surface of a semiconductor substrate (1) in a high voltage operation region (A1). After this step, the silicon oxide film (6) in the high voltage operation region (A1) contains the impurity during the second LDD implantation process whereas the silicon oxide film (6) in a low voltage operation region (A2) contains no impurity. This leads to such a characteristic that in the following pre-treatment with a wet process, the silicon oxide film (6) containing the impurity in the high voltage operation region (A1) is reduced in thickness, and the silicon oxide film (6) containing no impurity in the low voltage operation region (A2) is not reduced in thickness.
Patent TW-516276-B (TW)
Title: Full-duplex low-pass filter adapted for communication network
Inventor: CHOEH HER-JUN
IPC: H03H7/06
Filed: 2001-07-09
Granted: 2003-01-01
Abstract: The invention relates to a full-duplex low-pass filter adapted for communication network, in which the communication network comprises a high band communication terminal, a low band communication terminal and a signal channel shared by the high band communication terminal and the low band communication terminal. The low-pass filter contains a first input/output terminal, a second input/output terminal, a third input/output terminal and a fourth input/output terminal, a first inductor, a second inductor, a third inductor and a fourth inductor serially coupled with the input/output terminal respectively, a first capacitor providing a first end and a second end, a fifth inductor, a sixth inductor, a seventh inductor and a eighth inductor, in which the fifth inductor and the sixth inductor are serial coupled to the first inductor and the second inductor respectively and then both serially coupled to the first end of the first capacitor and the seventh inductor and the eighth inductor are serially coupled to the third inductor and the fourth inductor respectively and then serially coupled to the second end of the first capacitor, a first compensation circuit, a second compensation circuit, a third compensation circuit and a fourth compensation circuit coupled in parallel with the fifth inductor, the sixth inductor, the seventh inductor and the eighth inductor respectively.
Patent TW-563184-B (TW)
Title: Method and apparatus for processing substrates and method for manufacturing a semiconductor device
Inventor: MATSUNAGA TATSUHISA
IPC: H01L21/31
Filed: 2001-09-27
Granted: 2003-11-21
Abstract: A substrate processing apparatus includes a housing, a process tube for performing variable batch processes on substrates, and product substrate carriers. The product substrate carriers have a capacity of a predetermined number of substrates. A number of product substrates processed during one batch process are less than or equal to the predetermined number of the substrates. All of the product substrates contained in on product substrate carrier is processed in the process tube at a same time.
Patent TW-594481-B (TW)
Title: Semiconductor integrated circuit device
Inventor: ISHINABE IWAO
IPC: G11C7/10
Filed: 2001-12-13
Granted: 2004-06-21
Abstract: This invention discloses a semiconductor integrated circuit device, which comprises a comparison information latch circuit for storing comparison information which includes address information and write information to a semiconductor storage circuit and a backup comparator circuit. This backup comparator circuit compares corresponding signals of the signals in a semiconductor integrated circuit which are generated by the comparison information of the latch circuit and by an input signal for memory actions and outputs the coincidence signal.
Patent TW-536884-B (TW)
Title: A method and device for simultaneously exchanging and transferring packets of home telephone network and Ethernet network
Inventor: JENG YING-JR
IPC: H04L12/00
Filed: 2001-12-13
Granted: 2003-06-11
Abstract: The invention is a method and device for simultaneously exchanging and transferring packets of home telephone network Ethernet network featured by using first two columns of Ethernet network packet and HomePNA2.0 network packet as both receiving end address and forwarding end address to exchange and transfer packets of HomePNA2.0 and Ethernet among ports of regular Ethernet switch controller. The invention provides an interface conversion processing unit used to convert a packet of home telephone network from home telephone network to a corresponding Ethernet network packet. By means of the interface conversion processing unit converting HomePNA2.0 network packet to format of Ethernet network packet, the packet from Ethernet network to HomePNA2.0 network can be transmitted transparently as result of no need in providing HomePNA2.0 Link Layer protocol.
Patent TW-I262643-B (TW)
Title: Shifting mechanism
Inventor: CHANG SEAN
IPC: G02B6/35
Filed: 2001-12-31
Granted: 2006-09-21
Abstract: A shifting mechanism includes a base, a first sliding element, a second sliding element and a fixing element. The base further includes a first surface to enable the first sliding element to slide thereon, a second surface to enable the second sliding element to slide thereon and a third surface to contact with a passive element to drive an optical element. The fixing element optionally fixes the first sliding element on the base or the second sliding element. The shifting mechanism of the present invention can control the moving speed of the passive element so as to drive the optical element.
Patent TW-564654-B (TW)
Title: Noise cancellation circuit and method
Inventor: HERMAN DAVID IAN
IPC: H04R3/00
Filed: 2002-03-11
Granted: 2003-12-01
Abstract: A noise cancellation circuit includes comparison of a signal plus noise with a signal containing a greater proportion of noise to provide an intermediate signal. A similar comparison of the two signals is further compared with an attenuated version of the initial comparison to produce improved noise cancellation, taking into account distortions in the circuit originating with the transducers through which the signals are derived.
Patent TW-541750-B (TW)
Title: PEM fuel cell and the method of changing MEA of PEM fuel cell
Inventor: HO CHIEN-HSIEN
IPC: H01M8/02
Filed: 2002-04-29
Granted: 2003-07-11
Abstract: The present invention provides a type of bipolar plate that has a key on at least each of its two sides and each key has a through hole. The bipolar plate, membrane electrode assembly (MEA), and gasket are members to form a bipolar plate assembly where at least one surface of the bipolar plate is attached with a MEA. When any MEA in a bipolar plate assembly is defected and needs to be replaced, screw sectional locking may be provided by keys of another bipolar plate assembly to separate the bipolar plate assembly that includes the defected MEA so as to take the defected MEA out. Furthermore, the present invention provides a type of proton-exchange membrane (PEM) fuel cell including multiple bipolar plate assemblies where each bipolar plate assembly comprises a number of the bipolar plate, a MEA, and a gasket. The present invention also provides a method for exchanging bipolar plate assembly of PEM fuel cell thereby fast and safely disassembling, repairing, and exchanging defected MEA of PEM fuel cell and to simplifying MEA reassembly procedures.
Patent TW-558749-B (TW)
Title: Optical system and the exposure device comprising the same
Inventor: SHIRAISHI NAOMASA
IPC: G02B13/14
Filed: 2002-05-24
Granted: 2003-10-21
Abstract: The present invention provides an optical system, which is an optical system ensuring excellent optical performance without the substantial influence by the birefringence even when using the crystal material with birefringence, such as fluorite. The invention is characterized in comprising the first lens group (105, 106) composed of a plurality of crystal lenses with the optical axis (AX100) consistent with the crystal axis [111], and the second lens group (109, 110) composed of a plurality of crystal lenses with the optical axis consistent with the crystal axis [100]; wherein the first lens group has the 1A lens group and the 1B lens group, and has the positional relation for only relatively rotating the first angle; and, the second lens group has the 2A lens group and the 2B lens group, and has the positional relation for only relatively rotating the second angle.
Patent TW-560031-B (TW)
Title: Pad structure and method for manufacturing the same
Inventor: SU YEA-ZAN
IPC: H01L23/48
Filed: 2002-06-28
Granted: 2003-11-01
Abstract: An AlCu pad structure and a method for manufacturing the same are disclosed, wherein the present method utilizes a chemical mechanical polishing (CMP) technique to polish an AlCu film, so as to form an AlCu pad on an opening of a passivation layer on a top metal layer. Besides, the step for removing the AlCu film within a scribe line can be performed while the AlCu pad is patterned, or after the CMP step is performed.
Patent TW-552824-B (TW)
Title: Light-emitting device and manufacturing method thereof
Inventor: SEO SATOSHI
IPC: H01L51/00
Filed: 2002-07-12
Granted: 2003-09-11
Abstract: A light emitting element having a superior light emitting characteristic is provided by forming a region partly including a phosphor (light emitting region) in manufacturing of a light emitting element having an organic compound layer using a high molecular weight material. A solution in which a high polymer having a degree of polymerization of 50 or more is dissolved in a solvent is applied by a spin coating method, and then a low polymer which is composed of the same repetition units as the high polymer and has a degree of polymerization of 2 to 5 and a phosphor are coevaporated to form a light emitting region (105) and only a low polymer is vapor-deposited on the light emitting region to form an organic compound layer (103). Thus, the light emitting region (105) can be partly formed.
Patent TW-567046-B (TW)
Title: Cup composed of a conjugated fiber structure and methods for producing the same
Inventor: BABA KENJI
IPC: A41C5/00
Filed: 2002-07-26
Granted: 2003-12-21
Abstract: A cup is obtained by laminating and bonding woven or knitted fabrics comprising a polyester, with a polyester adhesive that is a hot-melt type resin binder, to both surfaces of a sheetlike polyester elastic fiber structure comprising an assembly of nonelastic polyester crimped staple fibers as a matrix and elastic conjugated fibers which are dispersed and mixed in the matrix and composed of a thermoplastic elastomer having a lower melting point than the melting point of a polyester polymer constituting the staple fibers by 40 DEG C or more and a nonelastic polyester, wherein the thermoplastic elastomer is exposed to at least the conjugated fiber surfaces, providing a conjugated fiber structure and then hot-molding the resulting conjugated fiber structure into a curved shape by molding processing with a metal mold.
Patent TW-577104-B (TW)
Title: Rapid cycle chamber having a top vent with nitrogen purge
Inventor: HALSEY HARLAN I
IPC: B65G49/00
Filed: 2002-08-07
Granted: 2004-02-21
Abstract: A chamber for transitioning a semiconductor substrate between modules operating at different pressures is provided. The chamber includes a base defining an outlet. The outlet permits removal of an atmosphere within the chamber to create a vacuum. A substrate support for supporting a semiconductor substrate within the chamber is included. A chamber top having an inlet is included. The inlet is configured to allow for the introduction of a gas into the chamber to displace moisture in a region defined above the substrate support. Sidewalls extending from the base to the chamber top are included. The sidewalls include access ports for entry and exit of a semiconductor substrate from the chamber. A method for conditioning an environment above a region of a semiconductor substrate within a pressure varying interface is also provided.
Patent TW-I224120-B (TW)
Title: Process for manufacturing plated resin molded article
Inventor: TAI TOSHIHIRO
IPC: C23C18/20
Filed: 2002-09-03
Granted: 2004-11-21
Abstract: The present invention relates to a process for manufacturing a plated resin molded article comprising plating a metal on the surface of a thermoplastic resin molded article and one of the following requirements (1), (2) and (3): (1) the thermoplastic resin molded article comprises a thermoplastic resin and a water-soluble material, the resin molded article is subjected to a degreasing treatment step and an electroless plating step, and it comprises no etching step by means of a heavy metal-containing acid; (2) the thermoplastic resin molded article comprises a polyamide-based resin and a styrene-based resin, the resin molded article is subjected to a degreasing treatment step and an electroless plating step, and it comprises no etching step by means of a heavy metal-containing acid; or (3) it comprises, as a pretreatment of metal-plating step, contacting the resin molded article with a acid or a base containing no heavy metal. Furthermore, the present invention provides a plated resin molded article obtained by the above process. A plated resin molded article is provided with high adhesion strength of plated layer without an etching treatment by means of chromic acid.
Patent TW-569282-B (TW)
Title: Dielectric barrier discharge apparatus
Inventor: OHNODA TADATOMO
IPC: H05B41/24
Filed: 2002-09-10
Granted: 2004-01-01
Abstract: In the state before the discharge, the oscillation mechanism (2) is used to set at an oscillation frequency region (ft) easy for starting the discharge; and the triggering mechanism (3) is then used to make the lamp (A) begin the discharging. After that, a detecting mechanism (4) is used to detect the resonant frequency (f2) of the resonant circuit (1) after the discharging. Then, a changing mechanism (5) is used to change the output voltages of two electrodes (A1 and A2) so as to stay at the resonant frequency (f2) for stable discharging after the beginning of discharge. Thus, it is capable of providing a dielectric barrier discharge apparatus having high light emission efficiency.
Patent TW-589164-B (TW)
Title: Pull of a slider for a slide fastener
Inventor: ODA KIYOSHI
IPC: A44B19/26
Filed: 2002-09-16
Granted: 2004-06-01
Abstract: A pull of a slider, which can be attached to a pull-attaching portion formed integrally on a slider body, and can be replaced easily. A pull-attaching portion (3) is provided integrally on a slider body (1), and a pull-connecting ring (4) has an opening (5) on a side of its ring-like frame body. The size of the opening (5) is formed not smaller than the thickness or width of the pull-attaching portion (3). Holding portions (6) extending in parallel along side edges of the opening (5) and a fitting protruded portion (11) of the pull main body (10) are fitted with each other and connected by a pin (7) so as to be freely pivotable. Upon replacement of the pull, the pin (15) is removed.
Patent TW-I227207-B (TW)
Title: Adjustable carton stop
Inventor: MORDEN GEORGE A
IPC: B65B3/02
Filed: 2002-10-09
Granted: 2005-02-01
Abstract: In a packaging machine that includes an elongated mandrel for the formation of a blank into a carton, wherein the mandrel 12 includes a secured end and a distal end, a method and apparatus are provided for correctly positioning the blank relative to the distal end of the mandrel. The carton stop comprises a selectively rotatable tool that includes an engagement segment 26 and is operable from a remote location, an elongated threaded rod 20 that includes a secured end 22 rotatably secured to the packaging machine and a distal end 24, and an abutment member threadably mounted upon the rod for longitudinal movement along the threaded rod in response to rotation of said threaded rod. The threaded rod defines an engagement segment 26 adapted to engage the engagement segment 29 of the rotating tool 28.
Patent TW-586242-B (TW)
Title: Avalanche photodiode for photon counting applications and method thereof
Inventor: VICKERS JAMES
IPC: H01L31/107
Filed: 2002-11-19
Granted: 2004-05-01
Abstract: An improved APD structure and an improved manner of operating APD's particularly beneficial for a single photon detection applications are provided. An APD is provided having an absorption region, a control region, and a multiplication region, wherein the multiplication region has a k value of approximately 1. In one example the multiplication region comprises a doped InP layer. The field control layer is designed so as to produce a reduction of electric field that is equal to the multiplication region's breakdown electric field, plus or minus 5V/mum. The method comprises applying a potential across the APD so as to induce an electric field across the multiplication region that exceeds the breakdown field; while having the control region shield the absorption region to prevent excessive noise.
Patent TW-I232664-B (TW)
Title: Method of obtaining a credential, physical token device, computing device and machine readable medium
Inventor: GRAWROCK DAVID W
IPC: G09C1/00
Filed: 2002-12-10
Granted: 2005-05-11
Abstract: Credentials may by issued to virtual tokens of a computing device based upon a credential issued to physical token of the computing device thus tying the virtual token credential to the physical token credential.
Patent TW-569458-B (TW)
Title: Semiconductor device
Inventor: KANEKO SATORU
IPC: H03K19/0185
Filed: 2002-12-11
Granted: 2004-01-01
Abstract: This invention provides a semiconductor device suited for use in a charge pump device, to prevent the latch up from occurring and enable a large current operation. On a P-type single crystal silicon substrate 50, an N-type epitaxial silicon layer 51 is grown and a P-type well region 52 is provided in the N-type epitaxial silicon layer 51. A P+ type buried layer 55 is provided to contact the bottom of the P type well region 52 with the P+ type buried layer 55 partially overlapping the P type well region 52. An N-type buried layer 56 is provided to electrically isolating the P type well region 52 from the single crystal silicon substrate 50. A MOS transistor is provided in the P type well region 52.
Patent TW-571347-B (TW)
Title: Photo mask and semiconductor device manufacturing method
Inventor: TSUBOI SHINJI
IPC: G03F1/68
Filed: 2002-12-20
Granted: 2004-01-11
Abstract: A photo mask which is used for exposure of an isolated pattern and a dense pattern for a semiconductor substrate. The photo mask includes a transparent substrate, a pair of first patterns, a first assistant pattern and a plurality of second patterns. The pair of first patterns is separated from each other by a first distance, wherein one of the first pattern is arranged at one side of the isolated pattern, and another of the first pattern is arranged at another side. The first assistant pattern is provided apart from the one of the first pattern by the first distance. In the plurality of second patterns, each of the linear patterns is sandwiched between two of the second patterns that are adjacent to each other. One of the linear patterns is separated from adjacent the other of the linear patterns by a predetermined distance. A phase of light transmitted through the one of the first pattern and a phase of light transmitted through the assistant pattern are opposite to each other. A phase of light transmitted through one of the second patterns and a phase of light transmitted through another of the second patterns adjacent to the one of the second pattern are opposite to each other.