baber/WOPTO huggingface dataset:
Patent JP-H04246597-A (JP)
Title: Ic memory card
Inventor: ADACHI KEIICHI
IPC: B42D15/10
Filed: 1991-01-31
Abstract: PURPOSE:To prevent springing out of a battery due to foregetting to lock, loss of memory information, etc., by a method wherein when an IC memory card is connected to an information processor while a battery holder is being not locked, a card detecting circuit in the information processor is kept incapable of being operated. CONSTITUTION:When a card side connector 2 of an IC memory card 1 is connected to an instrument connector 9 side of an information processor 8, respective card detecting pins 2b, 9b come in mutual contact with ground electric potential pins 2a, 9a. Therefore, when input of a battery 12 comes to be of an 'L' state, its output comes to be of an 'L' state concurrently therewith. Therefore, the information processor 8 detects that the IC memory card 1 is connected, and the IC memory card 1 comes capable of being operated. That is, when the IC memory card 1 is connected to the information processor 8 while a battery holder 3 is not locked with a slide type locking device 5, a card detecting circuit 10 is not operated by action of a slide switch 7.
Patent JP-S62188245-A (JP)
Title: Manufacture of semiconductor device
Inventor: HOSHINO TAKASHI
IPC: H01L21/768
Filed: 1986-02-13
Abstract: PURPOSE:To contrive the improvement in quality and yield of semiconductor devices by forming openings for electrical connection of a wiring region of a semiconductor device and a wiring material shallowly by eliminating conventional deep openings which reach a semiconductor substrate. CONSTITUTION:An intermediate wiring material 9 is formed on a connection window part 8, i.e., a connection part of a source 3 and a drain 4 and on a surface of an interlaminar insulating film 2 formed on the source 3 and drain 4 side to the same thickness as that of a gate material, i.e., polysilicon in this embodiment. Next, an interlaminar insulating film 10 is formed on the surface of the interlaminar insulating film 2 and the intermediate wiring material 9 and the surface is made even. To electrically connect the source 3 and the drain 4 to a wiring material through the intermediate wiring material 9, a part of the interlaminar insulating film 10 is removed to form openings 11 down to the intermediate wiring material 9. Similarly, a part of the interlaminar insulating films 2 and 10 is removed to form openings 12 down to the surface of a gate 5 in order to connect the gate 5 to the wiring material and the depths of the openings 11 and 12 are roughly the same. Then, the wiring material is formed in the openings 11 and 12.
Patent JP-H01203899-A (JP)
Title: Fake target
Inventor: JITSUMATSU HIROMI
IPC: F41H11/02
Filed: 1988-02-10
Abstract: PURPOSE:To provide a fake target which is free from the limitations of various systems which are adopted by the missile of an opposing party by discharging a false heat source from flying body and towing this false heat source through a mooring wire. CONSTITUTION:A mooring wire 2 which connects a fake target 21 and a flying body 1 has in its inside an electric power wire for supplying electricity, and a half-spherical Luneburg lens 31 receives energy from the electric power wire and radiates heat to the outside, and many of those lenses are arranged on the spherical surface to form a fake target 21. The thermal radiation energy of the fake target 21 is over that of the body 1 and the energy supply to the half-spherical Luneburg lenses 31 is controlled from the flying body so that the shape of the heat radiation will by similar to the flying body 1. The missile usually approaches the target, and when the width of the target occupying the field of view reaches about 50% of the field of view the guidance control is cut and the missile advance straight to the target by its inertia. For example, if the diameter of the fake target is 2m, the distance to the target is 200m. When the target in the field of vision which occupies it by 50% has length lying fully in the vision angle. If the body 1 is apart from the fake target by a distance approximately to the target at the moment when the guidance control is cut off, the flying body is safe.
Patent JP-S58146696-A (JP)
Inventor: NAKAMURA SHIYUNJI
IPC: E21D9/13
Filed: 1982-02-24
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。
Patent JP-S61189251-A (JP)
Title: Production of aminobenzylamine
Inventor: SUGIMOTO KENICHI
IPC: C07C211/49
Filed: 1985-02-19
Abstract: PURPOSE:To obtain the titled compound useful as a curing agent for epoxy resin, etc., selectively and simply in high yield and in high purity industrially advantageously, by reducing a specific nitrobenzylamine in the presence of a metallic catalyst by the use of inexpensive hydrazine. CONSTITUTION:Nitrobenzylamine shown by the formula (nitro group is in o-, m-, or p-position) is reduced with hydrazine as a reducing agent in the presence of a metallic catalyst (e.g., Pd, Pt, Ni, Co, etc., supported catalyst of them, Pd carbon, Pt carbon, etc.) to give aminobenzylamine. The amount of the hydrazine used is a little excess amount based on a theoretical amount, usually 1.2 - twice as much as the theoretical amount. The reaction is carried out at normal pressure under reflux of a solvent (e.g., water, methanol, etc.) or a temperature lower than it, a specific reactor is not required and this process is industrially suitable for carrying out.
Patent JP-H03235297-A (JP)
Title: Semiconductor integrated circuit
Inventor: MIYAMOTO JUNICHI
IPC: G11C29/04
Filed: 1990-02-13
Abstract: PURPOSE:To set a prescribed node at a desired potential by connecting a capacitor between the drain of the first FET (Tr) and a power source 2 and connecting the drain of the second Tr to the prescribed node for the first and second FET (Tr) connecting the source to a power source 1 and commonly connecting gates. CONSTITUTION:In first and second MOSFET (Tr) P1 and P2 connecting the source to a first power source Vcc and commonly connecting the gates, a capacitor C is provided between a connecting point node B for the gate and drain of the P1 and a second power source Vss. The drain of the TrP2 is connected to a prescribed node A to be set at the desired potential, and before the power source is turned on, a node B is set at the L level. When the power source is turned on, the potential difference between the power source and the node B exceeds a threshold voltage Vth of the TrP1 and the TrP1 is turned on, a charging current flows to the capacitor C and the node B is finally raised to Vcc-Vth regardless of the threshold voltage Vth of the P1. Then, at the node A, the charge of total amount Q=C flows into the node A similarly to the node B. Thus, the node A can be set at the desired potential without fail.
Patent JP-S53114768-A (JP)
Title: Seam welding method for steel pipe
Inventor: MATSUBARA HIROYOSHI
IPC: B23K9/12
Filed: 1977-03-18
Abstract: PURPOSE: To restrict the generation of the circumfernetial magnetic field in the steel pipe, and to prevent the generation of the weld defects due to the magnetic blow, in the case of seam welding of the steel pipe using the direct current, by covering the circumference of the cabtyre cord with the conductor, and by supplying the electric current in the direction inverse against the current flowing through the conductor in the core portion. 
     COPYRIGHT: (C)1978,JPO&Japio
Patent JP-H06221974-A (JP)
Title: Sampling head for gas detection device
Inventor: TOGAWA TETSUJI
IPC: G01N1/22
Filed: 1993-01-26
Abstract: PURPOSE:To provide a sampling head for a gas detection device which a leak valve, gas transmission membrane and the like are not choked by dust even if it is used outdoors and in a relatively dusty environment. CONSTITUTION:To a sampling head for gas detection device constituted by fixing a suction pipe 22 for gas sampling in a casing 23, connecting the casing 23 and the gas detection device with a pipe 21 for connection and sending the sample gas sampled with the suction pipe 22 to the gas detection device with the pipe 21 for connection, a filter 1 for eliminating dust mixing in the sample gas is provided.
Patent JP-S61187997-A (JP)
Title: Nitrifying and denitrifying method of organic sewage
Inventor: IZUMI SEIJI
IPC: C02F3/34
Filed: 1985-02-18
Abstract: PURPOSE:To increase an N removal rate drastically by determining the total required amt. of the air to be blown in the next cycle in accordance with the DO value detected in the stage when nitrification is completed, distributing the total amt. of the air to be blown to >=2 stages with lapse of time and supplying the air into a tank. CONSTITUTION:The DO in the stage when the nitrification is completed is detected by a DO sensor 9 in the stage of nitrifying and denitrifying the org. sewage by using a perfect mixing type aeration tank 1. The total amt. of the air to be blown required for the next cycle consisting of nitrification and denitrification stages is determined from the relation between the detected DO and standard DO. The total amt. of the air to be blown is distributed to >=2 stages with lapse of time and the air is supplied into the tank through an air introducing pipe 8 in such a manner that the air increases in the second half period. More specifically, the adequate air blowing is made possible in all periods of the respective stages for nitrification and denitrification and the DO distribution equal to or approximate to the ideal pattern can be formed. As a result, the N removal rate is remarkably increased.
Patent JP-H10246948-A (JP)
Title: Clip, and photographic sensitive web processor using it
Inventor: EARLE ANTHONY
IPC: G03D13/10
Filed: 1998-02-12
Abstract: PROBLEM TO BE SOLVED: To make a clip possible to be precisely arranged on a driving belt, to be bent when they are pass through a processor while being lined up, and to be avoided to twist and clog, by providing the clip with a claw having a flexible supporting body. SOLUTION: The flexible supporting body 45 is held between a reinforcing plate 43 and a mount 35 with a rivet 41. Then, a pair of claws 47 is carried by the respective outside edges of the supporting body 45 and fitted to the supporting body 45 by a rivet 49. Besides, the reinforcing plate is fitted if necessary. The web is passed through the slender slot 37 of the mount 35 and it enters. Then, it is properly bent and fixed. Thereafter, the claws 47 of the clip 33 are attached to the driving belt of the processor. By the elasticity of the supporting body 45, the clip 33 follows the path of the driving belt even when it is moved around a roller. As the result, the clip 33 is not twisted and separated from the driving belt in the midst of using. Thus, the more reliable clip 33 can be obtained.
Patent JP-H09222200-A (JP)
Title: Lp gas supplying unit block and lp gas supplying facility
Inventor: HANAI MUNEO
IPC: F17C13/08
Filed: 1996-02-19
Abstract: PROBLEM TO BE SOLVED: To enable replacement of each of component elements to be easily carried out without performing a cutting of a pipe or a threading of pipe by providing a vertical direction part fixing section for use in fixing a pipe having a drain, a horizontal part fixing section and a coupler fixing section for fixing a coupler. SOLUTION: Each of fixing sections 2, 3 has supporting pieces 5, 6 for supporting a pipe having a drain, U-shaped bolts 8, 9 arranged to pass through each of the supporting pieces 5, 6 and a saddle band. The supporting pieces 5, 6 are used for fastening the pipe having the drain by U-shaped bolts 8, 9. A coupler fixing section 4 has only a supporting piece 7, the central flat part of the coupler is placed on the supporting piece 7, a bolt is inserted into a screw insertion hole of the supporting piece 7 and it can be fixed. With such an arrangement as above, in the case that a gas meter, a pressure adjusting device and a hose are to be replaced, each of them is not replaced individually, but the gas meter, the pressure adjusting device and the hose can be replaced at once.
Patent JP-H05258586-A (JP)
Title: Nonvolatile semiconductor memory device
IPC: G11C16/06
Filed: 1993-02-19
Abstract: PURPOSE: To provide a semiconductor memory device, wherein the size of a memory cell and the interval between bit lines are narrowed, and a higher integration is expected compared to the conventional one. CONSTITUTION: Column lines 121-128 are respectively connected to selecting transistors 161-168, selecting transistors 161 and 162, 163 and 164, 165 and 166, 167 and 168 are respectively connected in common to a drain (or source) to make four sets of pair, and each transistor pair is respectively connected to program voltage generating circuits 101-104. And the gate of selecting transistors 161, 163, 164, 165, 167 are connected to a program selecting line 141 and the gate of selecting transistors 162, 164, 166, 168 are connected to a program selecting line 142, respectively. Program selecting lines 141, 142 are selected with a selecting circuit 20 in accordance with an external input address signal.
Patent JP-H02209779-A (JP)
Title: Solid state laser apparatus
Inventor: TAKADA TORU
IPC: H01S3/042
Filed: 1989-02-09
Abstract: PURPOSE:To derive heat of laser generator in high efficiency and to improve cooling efficiency by feeding cooling liquid in a state in contact with the outer or inner surface of the generator, and specifying to reduce the area of the passage of a contact cooler of a cooling liquid passage smaller than that of the other part. CONSTITUTION:A first cooling chamber 46 is connected to a cooling liquid supplying unit 76 via liquid passages 70, 72 at an inlet port 66 provided at a supporting member 28 and an outlet port 68 provided at a supporting member 26. A second cooling chamber 64 is connected to the supplying unit 76 via liquid passages 82, 84 at an inlet port 78 provided at a supporting member 52 and an outlet port 80 provided at a supporting member 50. The areas of the passages 70, 72 are all set larger than that of a part corresponding to the laser rod 14 of a cooling chamber 46.
Patent JP-H01205565-A (JP)
Title: Optical semiconductor device and its manufacture
Inventor: TERADA YOSHITAKA
IPC: H01L21/8222
Filed: 1988-02-12
Abstract: PURPOSE:To reduce a junction capacitance value remarkably by a method wherein a p-n junction of a photodiode is formed between a semiconductor crystal growth layer and a semiconductor substrate of high resistivity so that a depletion layer can be spread largely in the semiconductor substrate. CONSTITUTION:When a bias is impressed on a photodetecting-face electrode part 34 and an opposite-face electrode part (a p<+> type impurity layer) 22 via an ohmic electrode, a p<-> type semiconductor substrate 2 and an n-type semiconductor crystal growth layer 3 are used in a reverse-biased state. At this stage, the resistivity of the p<-> type semiconductor substrate 2 is nearly intrinsic and sufficiently high; accordingly, a depletion layer of a p-n junction by the p<-> type semiconductor substrate 2 and the semiconductor crystal growth layer 3 in a photodiode formation part 100 is spread largely in this p<-> type semiconductor substrate 2. As a result, a junction capacitance value can be reduced remarkably; a high-speed response can be realized.
Patent JP-H08220842-A (JP)
Title: Contact electrostatic charging device and copying device
Inventor: NAKAMURA KENICHI
IPC: G03G15/02
Filed: 1995-02-20
Abstract: PURPOSE: To select a charge area by a contact electrostatic charging device, to omit an eraser for discharging, and to perform the sampling and the mask- processing of an original image by using the contact electrostatic charging device. CONSTITUTION: This contact electrostatic charging device is provided with an electrostatic charging member 10 where a conductive member 9 and a non- conductive member 7 are alternately laminated in the width direction of a charge carrying member 1 and which comes into contact with or close to the member 1 so as to charge it, and electrostatic charging circuit means 20 and RL1 to RL6 selectively impressing voltage for charging on the conductive member 9. Then, a copying machine which decides the charge area on a photoreceptor corresponding to the specification of a part to be copied on an original on a control panel by using the contact electrostatic charging device is obtained.
Patent JP-S59166776-A (JP)
Title: Actuator
Inventor: RUDORUFU FUORUMERU
IPC: F16K31/00
Filed: 1984-02-22
Abstract: 1. Actuator comprising a heatable thermostat working element (46) which is mounted in a carrier plate (48) with the working piston (44) actuating via a separator piece (34) onto a control element, whereat a heating winding (50) surrounding the working element (46) is connectable to electric contacts (30, 32, 54), characterized in that the thermostatic working element (46), the electrical heating winding (50), the carrier plate (48) and contact pins (54) inserted in said plate form a prefabricated asembly, that the prefabricated assembly is inserted into a base portion (10) of a housing which may be connected to an upper portion (12) of said housing and that a compression spring (58) between said upper portion (12) and said carrier plate (48) forces the contact pins (54) towards related contact plates (30, 32) and the carrier plate (48) towards said base portion (10) when the housing portions (10, 12) are connected to each other.
Patent JP-H06239161-A (JP)
Title: Power transmission
Inventor: HONDA KENJI
IPC: B60K23/04
Filed: 1993-02-19
Abstract: PURPOSE:To appropriately lay out a power transmission valve block, in the casing of which hydraulic clutches are housed. CONSTITUTION:The power transmission which transmits power from an input shaft 6 connected to an engine to rear wheels via paired right and left output shafts 12R and 12L, has a separable valve block 71 attached on the top of its casing, and hydraulic clutches 11R and 11L which are housed in the casing, are controlled by solenoid valves housed in the valve block 71. This constitution thereby enables maintenance to be easily performed with the valve block 71 removed from the casing, and also allows the valve block 71 integrated with the casing to shorten oil passages connected to the hydraulic clutches 11R and 11L.
Patent JP-H10229149-A (JP)
Title: Semiconductor device
Inventor: KONO EIJI
IPC: H01L23/40
Filed: 1997-02-14
Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor device in which a module is fitted to a heat sink with a structure such that an aluminum block is not used, which is miniaturized and reduced in cost in a non-insulating type semiconductor device for power. SOLUTION: For fitting external electrodes 22 and 23 to a module 21 and fitting a heat sink 24 to the module 21 in a semiconductor device 20, both members are fitted to the module 21 without using an aluminum block. In such a case, the external electrodes 22 and 23 are fitted by inserting a cylindrical terminal into a first hole, formed in the module 21 and connecting the electrode in the module 21 and the external electrodes through the cylindrical terminal. For fitting the heat sink 24, a screw is engaged with a second hole, formed in the module 21 and is fastened via a thermal sheet 25.
Patent JP-H06243686-A (JP)
Title: Semiconductor memory device
Inventor: SAKATA YOSHIO
IPC: G11C11/41
Filed: 1993-02-19
Abstract: PURPOSE:To unnecessitate a latch circuit by performing alternately pre-charge to data lines for a first lead and a second lead connected to a memory element and outputting data from data line for a lead to which pre-charge is not performed. CONSTITUTION:In a period in which a first pre-charge signal S143 is in a H level, a first word signal S141 inputted to a first word line 141 is in a L level. In this case, a NMOS 105 is made an ON state and a NMOS 101 is made an OFF state. Therefore, a first lead data signal outputted to a data line 133 for lead is made invalid. In the first period, a first output control signal S135 is in a L level, the first lead data signal S133 is not outputted. The signal S133 is outputted from an output terminal 145 in a period in which the signal 143 is in a L level. Next, a second lead data signal S134 outputted to a second data line 134 for lead is reversed in the first period (122), outputted to a terminal 145, and not outputted in the second period.
Patent JP-H08218695-A (JP)
Title: Door lock system
Inventor: OKUBO TOMOAKI
IPC: E05B83/36
Filed: 1995-02-20
Abstract: PURPOSE: To make unlocking possible even when a key is forgotten or lost. CONSTITUTION: In a door lock system where a locking or unlocking signal issued by operating a key is received, and a control section 4 controls a door lock driving section for locking or unlocking a door electric lock 6 provided in a car and the entrance, a light-emitting element and a light receiving element are matrix-shapedly arranged in the window frame part of a door, and a door touch panel 7 equipped with a number converting section 8 for converting a coordinate signal fed from the light receiving element into a number is connected to the control section 4. A password number storage section 9, an input number storage section 10 and a password number comparison section 11 are provided in the control section 4.  The password number inputted from the door touch panel 7 is stored in an input number storage section 10 once, and the stored number is compared with the previously stored password number, and the locking and unlocking of the electric door lock is controlled on the result of the above comparison.
Patent JP-H01205525-A (JP)
Title: Filling up of contact hole
Inventor: HAYASHI HISAO
IPC: H01L21/28
Filed: 1988-02-12
Abstract: PURPOSE:To easily form low-resistance polycrystalline silicon as a wiring material inside a contact hole by constituting the polycrystalline silicon inside the contact hole by using a first and a second polycrystalline silicon layers. CONSTITUTION:After polycrystalline silicon has been deposited, a first polycrystalline silicon layer 14 is formed. An impurity is ion-implanted into the first polycrystalline silicon layer 14 inside a contact hole; a resistance value of this layer is made low. An impurity is coated on an inner wall of a recessed part of the first polycrystalline silicon layer 14 which has been deposited inside the contact hole. A second polycrystalline silicon layer 16 is deposited on the first polycrystalline silicon layer 14. A part which has been deposited on an insulating layer 12 out of the first and the second polycrystalline silicon layers 14, 16 is etched back and removed; the polycrystalline silicon is left only inside the contact hole. The coated impurity is diffused thermally; a resistance value of the second polycrystalline silicon layer 16 is made low.
Patent JP-H08227684-A (JP)
Title: Coaxial direct collision ion scattering spectroscopic device
Inventor: ISHIYAMA OSAMU
IPC: H01J37/252
Filed: 1995-02-20
Abstract: PURPOSE: To improve structural analysis accuracy for a crystal sample surface by accurately finding the integrated value of signal intensity through correction of the integration range of the signal intensity of an element as an observation object, depending on the incident angle of an ion beam incident on a sample. CONSTITUTION: A spectroscopic device is made of an ion scatter measurement device 1, an input device 2, an arithmetic processing device 3, and a display 4 such as CRT. The device 3 as a computer operates the device 1 via a measurement execution section 3a, on the basis of measurement parameters to change the incident angle of an ion beam incident on a sample S at the prescribed step. In addition, the device 1 sends the value of scattered ion intensity in the vicinity of a 180-degree scatter angle to a data arithmetic processing section 3b as energy spectral information. The section 3b calculates the integrated value of the signal intensity over an integration range corrected with a correcting section 3d, depending on a beam incident angle, and shows the results of the calculation on the screen of the display 4 in various ways under control by a display control section 3c.