baber/WOPTO huggingface dataset:
Patent JP-S5780882-A (JP)
Title: Recording device
Inventor: NAKANO KENJI
IPC: G11B20/10
Filed: 1980-11-07
Abstract: PURPOSE:To lower the error rate of PCM data considerably at the reproducing time, by making the bit frequency for recording of PCM data near the rotary switching time in the vertical blanking time lower than that in other times. CONSTITUTION:Sound signals divided to left and right channels are supplied to compressing circuits 22L and 22R through amplifiers 21L and 21R and are level- compressed. Compressed sound signals are applied to synthesizers 23L and 23R together with the noise from a dither generator 24. Respective output signals of synthesizers 23L and 23L are supplied to LPFs 25L and 25R and have needless components eliminated and are supplied to sample hold circuits 26L and 26R. Held sound signals are written in an RAM32 through a switch circuit 27, an A/D converter 28, a parallel-serial converter 29, and an error correcting encoder 30. Data written in the RAM is read into a shift register 34 by a clock CP1 and is further read out in the back porch time of the horizontal blanking time by a clock CP01 and is recorded onto a tape through a synthesizer 12.
Patent JP-H096225-A (JP)
Title: Apparatus for producing bodily-sensible environment
Inventor: MURAKAMI KANJI
IPC: E04H3/10
Filed: 1995-06-23
Abstract: PURPOSE: To provide an apparatus for producing bodily-sensible environment which can be small and easy to be driven and whose cost is low by providing a hung floor and a driving means to drive the hung floor based an a control signal for environment production. CONSTITUTION: A hung floor 22 is installed in parallel to a chassis 111 on the upper face of the chassis 111 of a vehicle 11. The hung floor 22 is set in hung state on a supporting pole 23 by string members, e.g. chains 25. A three- dimensional image is projected to a screen 34 installed in the front part inside a housing body 114 from the back side by a projecting apparatus 35. Control signals for driving are given to a driving apparatus 26 from the projecting apparatus 35. For example, in the caste where the content of the image to be projected is the starting situation of an automobile, the hung floor 22 is pushed forward simultaneously with the start. Then, the floor is so controlled as to be gradually turned back the original situation. Audience who sit on chairs 33 can have feeling as if they are actually starting on a car.
Patent JP-S5281603-A (JP)
Title: Radial piston type liquid motor pump
Inventor: NISHIJIYOU KENZOU
IPC: F04B1/04
Filed: 1975-12-27
Abstract: PURPOSE: To obtain a small sized and lightened motor pump by providing a rotator with arranging many cylinder like the spokes of a wheel in a casing with distribution valve at its side. 
     COPYRIGHT: (C)1977,JPO&Japio
Patent JP-S6315656-A (JP)
Title: Method of insulating coil of rotary
Inventor: TOMITA TSUTOMU
IPC: H02K15/12
Filed: 1986-07-04
Abstract: PURPOSE:To suppress the leakage of impregnated resin, by using a felt member of synthetic resin of 0.5mm-3.0mm in thickness as a slot bottom liner and a separator. CONSTITUTION:In a slot 2 of a core 1 an under-shed coil side 4 and an over- shed coil side 6 are provided through a separator 11 on a slot bottom liner 10. A wedge 7 is fitted to the groove on both side at the top of the slot 2 provided on the over-shed coil side 6 so as to close the opening of the slot 2. 4A and 6A are covering strands and 4B and 6B are coil insulation covering sheath. The slot bottom liner 10 and the separator 11 are made of felt material with the thickness of 0.5mm-3.0mm. Thus, during invacuum-pressing and impregnating, the impregnated resin is prevented from leaking out and in temperature raise, the shearing distortion produced to each interface of the core insulating layer, slot bottom liner, separator and core can be moderated.
Patent JP-S644074-A (JP)
Title: Semiconductor device
Inventor: OTAKA SHIGEO
IPC: H01L29/45
Filed: 1987-06-26
Abstract: PURPOSE:To decrease a source area and to upgrade area efficiency and to realize high performance of a MOSFET, by alloying a semiconductor layer with an aluminum electrode which is connected to a source n<+> layer and making this alloy penetrate through a part of said n<+> layer and be shorted with a (p) layer. CONSTITUTION:A polySi gate 5 is used as a mask on a surface of an n-type semiconductor substrate 1 serving as a drain, and a deep (p) layer diffused inside the substrate is used as a channel part 3, and the similar gate is used as a mask, and the diffused shallow n<+> layer is made to serve as a source 4, so that a vertical type (n) channel MOSFET is formed. After the evaporation of an Al electrode 7 connected to said source n<+> layer 4 is finished, this electrode 7 is heated at 450 deg.C in an H2 atmosphere. An alloy is thus formed on the surface of the n<+> layer 4, and it becomes Al-Si (alloy pit) 9 whose plane is formed at random as shown in a figure and it penetrates through n<+> layer junction and contacts with a (p) layer 3. An opening part of the (p) layer 3, serving as a channel part in a vertical type MOSFET, is made needless by this structure, and so area efficiency can be upgraded.
Patent JP-H098511-A (JP)
Title: Support metallic fixture for waveguide
Inventor: YASHICHIBASHI KENJI
IPC: H01P3/00
Filed: 1995-06-23
Abstract: PURPOSE: To allow the support fitting for waveguide to be used for both a waved long flexible waveguide and a square ridged waveguide. CONSTITUTION: The support is provided with a waveguide support fixture 20 with a doughnut like hollow part, a circular grip fitting 30 freely open/closed to grip the waveguide support fixture 20, and a support rod 40 having a male screw and nut 42 connecting to the grip fitting 30. In the hollow part of the waveguide support 20, both inner faces 21 on an axial line are formed circular- arc and both inner faces 22 on the other axial line orthogonal to the axial line is formed square. Moreover, a notch 23 connecting to the outer circumference at least at one position is provided to the hollow part of the waveguide support fitting and the waveguide support fitting 20 is arranged in the grip fitting 30 at a prescribed angle.
Patent JP-H07310151-A (JP)
Title: Method for heat-treating aluminum alloy casting
Inventor: ONISHI SANETSUGU
IPC: B22D29/00
Filed: 1994-05-12
Abstract: PURPOSE:To economically execute T6 heat treatment in a short time, at the time of subjecting the cast part of an Al alloy to T6 heat treatment, by executing solution treatment in such a manner that the cast part is rapidly cooled immediately after its mold releasing CONSTITUTION:An Al alloy of AN-Si series or the like is cast into a mold. The Al alloy cast part of a high temp. close to the eutectic temp. directly after the solidification of the Al alloy is released from the mold. Immediately after that, it is rapidly cooled by water and is subjected to solution treatment. The Al alloy casting subjected to the solution treatment is subjected to T6 heat treatment by executing aging treatment by an ordinary method. Since the conventional solution treatment 1 in which the air-cooled Al alloy casting is heated to about the eutectic temp. and is held for a long time can be eliminated, energy for heating is not required and long time holding is not required as well, so that solution treatment can be executed in a short time with the conserved energy, and by the subsequent aging treatment, T6 heat treatment for the Al alloy casting can be executed with good productivity.
Patent JP-H062163-A (JP)
Title: Production of stainless steel for porcelain enameling
Inventor: KAKIMOTO YOSHINOBU
IPC: C23D5/00
Filed: 1992-06-17
Abstract: PURPOSE:To easily provide a stainless steel with high adhesion to porcelain enamel with certainty by regulating the surface of a stainless steel to specific surface roughness and then treating this stainless steel at specific temp. in a nonoxidizing gas atmosphere of specific due point. CONSTITUTION:The surface of a stainless steel is regulated so that surface roughness Ra becomes 1.0-3.0mum, by which grooves for eating porcelain enamel can be formed in the surface of the stainless steel. Subsequently this stainless steel is heat-treated at 650-1100 deg.C in a nonoxidizing gas atmosphere of -30 to -5 deg.C dew point. It is preferable to regulate heat treatment time to about 30-120sec in the case where this heat treatment is done, e.g. by using a continuous annealing furnace. By this method, an extra thin and dense oxide film can be formed on the surface of the stainless steel and the stainless steel for porcelain enameling having high adhesion to porcelain enamel can be obtained.
Patent JP-S6136699-A (JP)
Inventor: ITAI KEIKICHI
IPC: F41B7/00
Filed: 1984-07-27
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。
Patent JP-S6315621-A (JP)
Inventor: KOBAYASHI SHUNJI
IPC: H02H9/06
Filed: 1986-07-04
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。
Patent JP-H053765-A (JP)
Title: Seasoning preparation
Inventor: MORI ITARU
IPC: A23L27/23
Filed: 1991-06-28
Abstract: PURPOSE:To obtain a powdered seasoning preparation suppressing decomposition of 5-ribonucleotides caused by phosphatase in foods and simultaneously avoiding defects of an offensive smell and formation of coating film during dissolution. CONSTITUTION:A 5'-ribonucleotide, fats and oils having <=50 deg.C melting point, powdered base and a polyol are granulated by blending granulation or extrusion granulation to give a powdered seasoning preparation having stability to enzymolysis.
Patent JP-S6050344-A (JP)
Title: Solar heat-utilizing hot water apparatus
Inventor: KITA SHIGEHIRO
IPC: F24S10/95
Filed: 1983-08-29
Abstract: PURPOSE:To make it possible to automatically obtain hot water of a constant set temperature even when the quantity of receiving light is low by constituting the titled apparatus to carry out heating of the stored water capacity in proportion to the quantity of heat received from solar beam. CONSTITUTION:A feed water pipe 4 is mounted on a heat accumulating tank 2 through a switching valve and an electromagnetic valve 5, and water discharged within the heat accumulating tank 2 is introduced into a feed water pipe 7. The lower end of the feed water pipe 7 is opened in the vicinity of the bottom part 2a of the heat accumulating tank 2, and water feeding is carried out from the bottom part 2a of the heat accumulating tank 2. A heat pipe (not shown) is inserted into the heat accumulating tank 2 from the heat collector 1. Accordingly, water stored at the lower part within the heat accumulating tank 2 is heated by thermal energy collected in the heat collector 1, and feed water is introduced out of the feed hot water port 8 provided at the bottom part on the side surface of the heat accumulating tank 2. By this procedure, the capacity of stored water becomes substantially proportional to the quantity of heat received from solar beam automatically by compact means, responsive to the seasonal and daily conditional change of the solar beam, and it is possible to accumulate the heat at a set temperature.
Patent JP-S5680178-A (JP)
Title: Gaas solar cell
Inventor: MITSUI KOUTAROU
IPC: H01L31/0693
Filed: 1979-12-05
Abstract: PURPOSE:To increase photoelectric converting efficiency by a method wherein a p type GaAs layer containing Si as principal impurities, the life time or diffusing distance of a small number of carriers thereof is long, is used as an effective light receiving region. CONSTITUTION:A p type GaAs layer 8 containing Si as principal impurities is formed on an n type GaAs substrate 1, and a p type Ga1-XAlXAs layer 4 is formed on the layer 8. By employing said GaAs solar cell, since most of the lights transmitting the p type Ga1-XAlXAs layer 4 are absorbed in the liquid phase epitaxial p type GaAs layer 8 to which Si, wherein the diffusing distance of a small number of carriers is long, is added, the collecting efficiency of light carriers being generated is improved as compared with the conventional structure using a p type GaAs layer formed by diffusing Zn as a light receiving region, and photoelectric converting efficiency is increased.
Patent JP-H03130983-A (JP)
Title: Pipeline serial memory and method of pipeline thereof
Inventor: JIYOSEFU FURONIIUSUKI
IPC: G11C7/00
Filed: 1990-06-16
Abstract: PURPOSE: To shorten an access time by making a read-out method of a serial memory of RAM constitution a pipeline system. CONSTITUTION: A serial memory having RAM constitution is a FIFO buffer memory, has plural memory cell arrays 4, 6 having plural cells, and data elements are read out in the same order as the order with which it is written in a memory. A memory cell is selected by a read-out array selector 20 and a read-out cell selector 22 to read out data elements in each readout cycle. At the time, a data element read out from a memory cell is not a element to be outputted with the present read-out cycle, but is a element to be read out at the next cycle. By using the pipeline system, time delay for detecting and selecting a memory cell is prevented, and an access time is shortened.
Patent JP-S6050436-A (JP)
Title: Identification of coke and semi-coke texture
Inventor: NEMOTO KENICHI
IPC: G01N21/55
Filed: 1983-08-30
Abstract: PURPOSE:To identify the texture of a sample of coke and semi-coke automatically and quantitatively, by measuring the maximum and minimum reflectivities at many points of the sample, and obtaining the distribution of an anisotropic index. CONSTITUTION:An automatic scanning-sample table 2 is driven by an XY-stage- scanning control circuit 9 based on a command from a sequence control circuit 7, and a sample 1 of coke or semi-coke is set at a measurement starting position. A polarizing plate is rotated by a polarizing-plate-rotation controlling circuit 8 and a polarizing-plate rotating device 10, and the reflectivity is measured through a polarizing microscope 3 and a photoelectric converter 4 and stored in a reflectivity storing circuit 5. The maximum and minimum reflectivities Rmax and Rmin are computed by a reflectivity operating circuit 6, and an anisotropy index phi=(Rmax-Rmin)/Rmax is obtained. From the distribution of phi, the texture of the sample is identified.
Patent JP-H05330648-A (JP)
Title: Substrate sucking device
Inventor: KAMIAKA HIDETO
IPC: H01L21/683
Filed: 1992-05-26
Abstract: PURPOSE:To provide a ceramic sucking plate small in specific resistance and the number of pores on the surface in a substrate sucking device provided with the sucking plate for moving and fixing thin plates such as wafers by suction. CONSTITUTION:High purity titanium oxide fine powder is baked at the temperature of 1100-1300 deg.C in the atmospheric air, then subjected to HIP treatment, further baked at the same temperature in the reducing atmosphere, and subjected to HIP treatment again to obtain a titanium oxide made sucking plate of 1.0OMEGA.cm or less in specific resistance and 100/mm<2> or less in the number of pores of 3mum or more in diameter. This substrate sucking device is provided with such a sucking plate. The suction of dirt and the like in association with electrostatic charge is not thereby generated, nor is the sucking-holding capacity of a thin plate such as a wafer lowered. Applied to a wafer hand and a wafer holder, this device can contribute in a large degree to the high yield, high integration, and the like of semiconductors.
Patent JP-S5681965-A (JP)
Title: Mos semiconductor integrated circuit
Inventor: TAKEI SAKAE
IPC: H01L27/02
Filed: 1979-12-07
Abstract: PURPOSE:To completely protect an MOS element by connecting a sruge absorbing protective element between a power wire for the MOS element and a substrate or between the output wire and the substrate and forming the threshold voltage higher than the using maximum voltage of the MOS element and lower than the P-N junction breakdown voltage. CONSTITUTION:MOS transistors T1 and T2 are connected in series, one region of a transistor T1 is connected to a power line B, the connecting point of the transistors T1 and T2 is connected to an output line O, and the other region of the transistor T2 is connected to the grounding line G. In this configuration a protective element TP1 is connected between the power line B and the grounding line G, and a protective element TP2 is connected between the output line O and the grounding line G. At this time an enhancement MOS transistor is used as the elements TP1 and TP2, the gate and the drain are connected to the power line B, and the source is connected to the grounding line G. Thus, the diode characteristic is provided at the transistors, thereby abruptly reducing the surge to the grounding line G.
Patent JP-S5582636-A (JP)
Title: Production of particle board
Inventor: HIGUCHI KOUJI
IPC: B27N3/06
Filed: 1978-12-20
Abstract: PURPOSE: To obtain a particle board with excellent surface smoothness by applying to the wood chips an adhesive prepared by adding a thermoplastic resin emulsion to a urea resin or urea-melamine resin adhesive, laminating the chips in the form of a mat such that the adhesive-applied wood chips form at least the surface layer, and then hot-pressing the laminate.  
     CONSTITUTION: An emulsion of a thermoplastic resin such as vinyl acetate resin is added, in an amount of about 5W50% by weight calculated in resin equivalent, to urea resin or urea-melamine resin adhesive. This mixed adhesive is applied to the surface layer chips in an amount of about 10W16% calculated in terms of resin solid based on the wood weight. To the inner layer chips is applied a urea resin or urea-melamine resin adhesive in an amount of about 8W12% calculated in terms of resin solid based on the wood chip weight. Then the surface layer chips and inner layer chips are laminated alternately to form a mat-like laminate, and this laminate is placed in a hot press and hot-pressed at a temperature of about 150W190°C and under pressure of about 20W30kg/cm 2 . 
     COPYRIGHT: (C)1980,JPO&Japio
Patent JP-S6138995-A (JP)
Inventor: HIRANO SHINICHI
IPC: G10D3/14
Filed: 1984-07-31
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。
Patent JP-2000350115-A (JP)
Title: Image processor, its method and medium
Inventor: HANEDA REIKO
IPC: G09G5/00
Filed: 1999-06-07
Abstract: PROBLEM TO BE SOLVED: To improve the operability by using the mean luminance of pixels that is evaluated to calculate a correction value, comparing the calculated mean luminance with a prescribed threshold to invert the sign of the correction value calculated by a calculation means, and subtracting the correction value from a pixel value of a part of a 1st image corresponding to a 2nd image so as to generate a 3rd image. SOLUTION: A switch 11 outputs and image signal from an upper stage and received at an input terminal (a) or (b) to an image analysis section 12 and a display control section 14 under the control of a control section 2. The image analysis section 12 calculates a mean luminance value of all pixels of a background image received from the switch 11 and provides an output of the means luminance to the display control section 14. The display control section 14 discriminates whether or not the received means luminance is smaller than a prescribed threshold and the display control section 14 inverts a sign on a correction value calculated before when the display control section 14 discriminates that the mean luminance is smaller than the prescribed threshold value.  When the display control section 14 discriminates that the means luminance is not smaller than the prescribed threshold, this process is skipped.
Patent JP-S5490384-A (JP)
Title: Recovery of atactic polymer
Inventor: MATSUYAMA NORIYUKI
IPC: C08F8/00
Filed: 1977-12-28
Abstract: PURPOSE: To remove the deposit on the heat transfer surface and thereby increase the heat transfer coefficient, by the instantaneous, pulse-like increase of the amount of propylene fed into the evaporator.  
     CONSTITUTION: The polypropylene slurry prepared in the polymerization process 1 is transferred successively to a vessel 2, a reducing valve 4 and a heating pipe 5 to give powdery isotactic polymer. On the other hand, the liquefied propylene containing the atactic polymer is transferred to the evaporator 9 and heated at a pressure of 13W40 kg/cm 2  gauge to vaporize propylene.The feeding flow rate of the liquefied propylene transferred to the evaporator 9 is increased periodically and pulse-like more than 1.3 times the average flow rate, to remove the atactic polymer and the catalyst residue deposited on the heat transfer surface. 
     COPYRIGHT: (C)1979,JPO&Japio
Patent JP-2000343051-A (JP)
Title: Method for washing fine particles
Inventor: OHIRA HIDEAKI
IPC: B01D29/01
Filed: 1999-06-07
Abstract: PROBLEM TO BE SOLVED: To efficiently wash fine particles by making a process, wherein the cake remaining after slurry of fine particles is subjected to solid-liquid separation, is filtered while washing liquid is poured, into one cycle process and repeatedly performing the process plural cycles. SOLUTION: A lower filter 2 is fixed to a filter container 1 and on the lower filter 2, the cake 3 remaining after slurry of fine particles is subjected to solid- liquid separation is placed. Also on the upper surface of the cake 3, a water permeable upper filter 4 is placed. When washing fine particles in the cake 3, a sucking device is used to suck the filter container 1 through a suction port 5, and also the fixed quantity of washing water consisting of ion exchange water is poured onto the upper filter 4. After the pouring, a process leading to liquid filtrate being discharged from the suction port 5 is made into one cycle process, and the process is repeatedly performed plural times.
Patent JP-H118210-A (JP)
Title: Method and apparatus for manufacturing of semiconductor element
Inventor: SUMIYA MASANORI
IPC: C25D7/00
Filed: 1997-06-17
Abstract: PROBLEM TO BE SOLVED: To ensure accurate wiring, while preventing the wiring from being made thin by immersing the surface of a substrate into a plating liquid, connecting the substrate with an anode and supplying a DC current thereto, and then connecting the substrate with a cathode and supplying a DC current thereto, thereby performing electrolytic plating. SOLUTION: Ti film 102 and W film 103 are deposited sequentially on a semi-insulating GaAs substrate 101. The surface of the W film 103 is covered with a native oxide 104 upon being exposed to air. A resist pattern 105 for plating wiring is then formed thereon, and the substrate is set in a plating bath 106 while directing the rear side of a sample upwards. Subsequently, a plating liquid 110 is introduced into the plating bath 106, and a DC current is fed with the surface side as an anode. After removing the surface oxide from the W film 103, a DC current is fed with the substrate as a cathode, and the resist pattern 105 is removed. Finally, the W film 103 and Ti film are removed from unwanted section other than the section where Au is grown by RIE using SF6 gas.
Patent JP-S6219145-A (JP)
Inventor: FUKUMA YASUFUMI
IPC: A61B3/107
Filed: 1985-07-19
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。