baber/WOPTO huggingface dataset:
Patent TW-497201-B (TW)
Title: Method for preventing latch-up of CMOS by extra doping in shallow trench isolation structure
Inventor: LIAW JHON-JHY
IPC: H01L21/76
Filed: 1999-08-24
Granted: 2002-08-01
Abstract: A method for preventing latch-up of CMOS by extra doping in a shallow trench isolation structure uses a doping in the well region to reduce the parasitic serial resistance, thereby effectively inhibiting the occurrence of latch-up in a CMOS circuit and improving the isolation border of the field region and the well region in the CMOS circuit. The method comprises: (i) using a photomask lithography technique and an etching technique to define an active region on a substrate; (ii) growing an oxidation layer; (iii) using the photoresist layer to form a mask layer on the p-well region, and implanting a first dopant in the n-well region of the un-masked layer; (iv) after removing the mask layer, using another photoresist layer to form a mask layer on the n-well region, and implanting a second dopant in the p-well region of the un-masked layer; and (v) filling up the shallow trench, and using a photomask lithography technique and an implantation technique to form a well region and adjusting the threshold voltage thereof, and separately forming a MOS transistor on the p-well region and the n-well region.
Patent TW-421864-B (TW)
Title: Method of making copper interconnects
Inventor: TSAI MING-SHING
IPC: H01L23/48
Filed: 1999-08-24
Granted: 2001-02-11
Abstract: The present invention provides a method of making copper interconnects, which comprises sequentially forming a barrier layer and a copper seed crystal layer on the sidewall and the bottom of a dual damascene structure; under the presence of a brightener and a planarization agent, using an electrochemical deposition (ECD) method to form a copper metal with a carbon content of 0.5 to 2 atom% in the dual damascene structure as a copper interconnect. The manufacture method according to the invention can reduce the electromigration (EM) phenomena in the copper interconnect.
Patent TW-424328-B (TW)
Title: EEPROM with high capacitance coupling ratio
Inventor: WANG LIN-SUNG
IPC: H01L21/8247
Filed: 1999-09-17
Granted: 2001-03-01
Abstract: A manufacturing method for EEPROM which can increase the capacitance coupling ratio and enhance the device performance includes the following steps: firstly, forming the isolation area between the active components on the substrate; forming a polysilicon conductive layer in the control component area to cover part of the control component area and expose another part of the control component area; forming ragged surface structure for single crystalline silicon and polysilicon in the control component area; then, implanting the dopant ions into the substrate and forming the tunneling doping area and the control gates respectively; forming the inter-gate dielectric on the control gates and forming the tunneling dielectric and the non-tunneling dielectric on the tunneling doping area simultaneously; then, depositing a polysilicon floating gate on the tunneling doping area and most of the control gates; depositing an inter-dielectric on the floating gate and etching to form the via for connection between the control gate and the interconnect circuit.
Patent TW-430996-B (TW)
Title: Structure and manufacturing method of a thin-film transistor with multiple gate structure
Inventor: HUANG TING-HUEI
IPC: H01L29/786
Filed: 1999-10-05
Granted: 2001-04-21
Abstract: The present invention reveals the manufacturing method of a thin-film transistor with larger thickness and multiple gate structure, wherein the metal gate electrode is planarized by using spin coating of organic polymer material layer, and the metal gate electrode is deposited with the thin film formed of the second metal material, in which the more appropriate material to cover the metal is Molybdenum (Mo). The present invention further reveals a planarization process for detecting the end point by applying dry etching and using the ultraviolet spectrum of Molybdenum, so that all of the organic polymer material can be removed from the plain surface of the metal gate(and the metal coverage layer), and terminate the dry etching process after that. Then deposit dielectrics such as Silicon Nitride on the surface of the metal gate and the remaining organic polymer material layer to finish the isolation process of gate electrode. The metal coverage layer is added to the surface of gate electrode in the method of the present invention, so the end point is easier to be recognized in the planarization process, wherein the organic polymer material layer can provide a substrate, and the dielectric material can be deposited on it to isolate the metal gate. The problems of the well-known technology such as step-coverage capability and hole generation in isolating the thick metal gate electrode can be resolved by the method revealed in the present invention.
Patent TW-469417-B (TW)
Title: Magnetic type article monitoring device
Inventor: WANG CHING-CHIUAN
IPC: G08B13/00
Filed: 2000-02-17
Granted: 2001-12-21
Abstract: The present invention provides a magnetic type article monitoring device by which a tag is surely detected in a gate. To solve the problem, in the device, a pair of energizing coils 1a and 1b constituted by respectively superimposing a pair of main coils 4 and 6 which are respectively provided with a part where current is made to flow in a same direction and with a part where current is made to flow in the different direction in a parallel and horizontal Y direction and a vertical Z direction concerning the movement direction of an article with the tag 3 and also auxiliary coils 5 and 7 are arranged at prescribed interval to permit the part where current is made to flow in the same direction to be opposed to the part where current is made to flow in the different direction. A part between the energizing coils 1a and 1b is made to be the gate 2 for passing through the tag 3 and a detection coil is disposed in the gate 2, which detects that the magnetic flux densities of magnetic fields generated by the respective energizing coils 1a and 1b are changed by the passing-through of the tag 3. Electromagnetic waves are not cancelled each other in any one of X, Y and Z directions in the gate 2 so that the tag 3 is surely detected.
Patent TW-I241365-B (TW)
Title: Barium doping of molten silicon for use in crystal growing process
Inventor: PHILLIPS RICHARD J
IPC: C30B15/10
Filed: 2000-03-15
Granted: 2005-10-11
Abstract: A process for preparing doped molten silicon for use in a single silicon crystal growing process is disclosed. Polysilicon is doped with barium and melted in a silica crucible containing less than about 0.5% gases insoluble in silicon. During melting and throughout the crystal growing process the barium acts as a devitrification promoter and creates a layer of devitrified silica on the inside crucible surface in contact with the melt resulting in a lower level of contaminants in the melt and grown crystal.
Patent TW-530203-B (TW)
Title: Data processing system
Inventor: HWANG YUNG-CHI
IPC: G06F12/06
Filed: 2000-04-19
Granted: 2003-05-01
Abstract: The present invention provides a data processing system that uses a microprocessor to access a memory space in a memory through an application specific integrated circuit (ASIC) when the data processing system uses the ASIC to download an application program code from an external computer system into the memory space. The microprocessor generates an address latch enable (ALEN) signal, several read/write enable (RDEN/WREN) signals, and a first address signal. The ASIC accepts the foregoing signals and corresponds the external memory address space of the microprocessor to be as the address space of the memory space. During the period when the ALEN signal is 'ENABLE', the ASIC reads the first address signal and converts it to be the second address signal of the memory space so as to read the corresponding first data. When one of the RDEN/WREN signals is 'ENABLE', the ASIC either converts the first data to be the second data and transmits the second data back to the microprocessor accordingly or, in accordance with the second address signal, converts the data to be written into the microprocessor before writing them into the memory.
Patent TW-495370-B (TW)
Title: Exhaust gas treating device for semiconductor manufacturing process
Inventor: LAI JIAN-CHENG
IPC: B01D47/10
Filed: 2000-06-08
Granted: 2002-07-21
Abstract: The present invention mainly provides an exhaust gas treating device for semiconductor manufacturing process. The exhaust gas transporting path of this device does not pass through the position of the spraying head, so as to avoid blocking the piping above the spraying head. Furthermore, when cleaning and maintaining the device, only closing the by-pass valve and opening the cleaning hole are needed to be done, without interrupting the operation of manufacturing process or detaching other piping. Besides, the location of the pressure gauge of the device can directly indicate the obstruction of each piping and allow a rapid response. Moreover, the pressure release pipe of the device is located above the spraying head and does not contact directly with the exhaust gas. Therefore, the obstruction of the pressure release pipe is not likely to happen to affect its pressure release capability. Not only to effectively treating the exhaust gas generated in the semiconductor manufacturing process, the invented device can also provide the user with a simple maintenance procedure and the function of protecting the operation of related facilities.
Patent TW-473443-B (TW)
Title: Car body frame vibration-proofing structure of straddling type vehicle
Inventor: WAKUSAKA KAZUHARU
IPC: F16F15/08
Filed: 2000-08-11
Granted: 2002-01-21
Abstract: To install a vibration-proofing block 46 on a car body frame 11 by installing a protruded part 46b of the vibration-proofing block 46 to work to restrain vibration of the car body frame 11 on a lower member 52, compressing a bottom surface 46c of the vibration-proofing block 46 by an upper member 51 and connecting flange parts 51c, 51c and flange parts 52c, 52c of the both members 51, 52 to each other. It is possible to simplify a manufacturing facility of a car body frame with a anti-vibration structure and to easily manufacture the car body frame with the anti-vibration structure by eliminating a device especially to compress the anti-vibration block as it is possible to use pressure for spot welding for compression of the anti-vibration block since the compressing direction of the anti-vibration block and the pressurizing direction of spot welding are the same, for example, in case of spot welding.
Patent TW-496815-B (TW)
Title: Apparatus and methods for z-axis control and collision detection and recovery for waterjet cutting systems
Inventor: STEWART JONATHAN M
IPC: B26F3/00
Filed: 2000-08-25
Granted: 2002-08-01
Abstract: This invention relates to apparatus and methods for z-axis control and collision detection and recovery for waterjet and abrasive-jet cutting systems. In one embodiment, an apparatus includes a linear rail, a slide member coupleable to a cutting head and slideably coupled to the linear rail, at least one actuator having a first end coupled to the slide member and a second end fixed with respect to the linear rail, a position sensor, and a controller. The actuator provides an adjustable support force that supports the weight of the cutting head, allowing the cutting head to be controllably positioned at a desired height above the workpiece. The actuator may include a pneumatic cylinder, or alternately, a linear motor. In another aspect, an apparatus includes a first mount member coupleable to a controllably positionable mounting surface of the waterjet cutting system, a second mount member coupleable to the cutting head and disengageably coupled to the first mount member, and a sensing circuit having a plurality of first conductive elements disposed on the first mount member and a plurality of second conductive elements disposed on the second mount member. In the event of a collision between the cutting head and an obstruction, the second mount member disengages from the first mount member to prevent breakage of the cutting head. Following the collision, the second mount member is quickly and easily re-engaged with the first mount member without time-consuming re-calibration. In one embodiment, re-engagement of the second end first mount members is automatically performed by a biasing member.
Patent TW-536669-B (TW)
Title: High-speed memory device, socket mounting structure for mounting a high-speed memory device and mounting method of mounting high-speed memory device
Inventor: KASASHIMA MASAHIKO
IPC: G06F13/40
Filed: 2000-08-30
Granted: 2003-06-11
Abstract: In this invention, SO-RIMM sockets are arranged on a mother board so that an output side terminal of a connector provided on a preceding-stage SO-RIMM and an input side terminal of a connector provided on a succeeding-stage SO-RIMM will be set to face each other at a close distance. Therefore, in a high-speed memory device constructed by connecting a plurality of flat high-speed memory modules each including a connector on one side of which input side and output side terminals for dealing with a high-speed signal of plural-bit width whose impedance is controlled and which is transmitted from a memory controller to a terminal resistor are arranged, a high-speed memory device in which high-speed memory modules can be cascade-connected and which can maintain the impedance of a memory bus signal in a constant value by use of an inexpensive multi-layered circuit board structure, a socket mounting structure of the high-speed memory device and a mounting method of the high-speed memory device can be provided.
Patent TW-I224697-B (TW)
Title: Liquid crystal display device
Inventor: FUKAMI TETSUO
IPC: G02F1/1362
Filed: 2000-12-22
Granted: 2004-12-01
Abstract: In a liquid crystal display panel employing a pseudo-dot-inversion driving, the alignment offset between the layers in the TFT array, which tends to be caused during the production of the TFT array, produces a difference in charge performance between the pixels disposed adjacent to each other, and the difference in charge performance triggers flicker and horizontal and vertical lines. In the liquid crystal panel of the invention, such flicker and horizontal and vertical lines are prevented. To achieve this, the liquid crystal panel of the invention is constructed such that, in two TFTs surrounded by two adjacent image signal lines or scanning signal lines and placed next to each other with respect to the direction of the signal lines, the source electrodes or the like are connected to different image signal lines or the like. In the two TFTs placed in the pixels next to each other, the arrangements of the source electrodes and the drain electrodes are alternated so as to equalize the size of overlapped areas, which is the amount of area changes in each layer in the TFTs.
Patent TW-546643-B (TW)
Title: Optical disc, and method and apparatus for reading address on the optical disc
Inventor: FURUMIYA SHIGERU
IPC: G11B7/007
Filed: 2000-12-28
Granted: 2003-08-11
Abstract: An optical disc having scattered address marks which can be detected accurately and rapidly, is disclosed. The scattered address marks are formed by a sync mark, a positive mark and a negative mark. The sync mark, positive mark and negative mark are formed, for example, by forming a discontinuing portion in the wobble groove or by forming a irregularly deformed portion in the wobble groove.
Patent TW-525029-B (TW)
Title: Reflection type liquid crystal display device
Inventor: NORITAKE KAZUTO
IPC: G02F1/1335
Filed: 2001-02-02
Granted: 2003-03-21
Abstract: Obtained is a reflection type liquid display device wherein the brightness of each display picture is higher and a bright display in wide visual angle is available by sandwiching liquid crystal 21 between an insulative substrate 10 and an opposite electrode substrate 30. Insulative substrate 10 comprises a TFT and a reflection display electrode 19 having flat part FL. Slant part SL and bottom surface BA. Opposite electrode substrate 30 is formed by laminating a color fitter 31 and opposite electrode 34, and comprises a diffusion layer 43 having a haze value of 33% on the viewers side, phase differential plate 44 and a polarization plate 45.
Patent TW-513704-B (TW)
Title: Method and device for producing DVD
Inventor: EICHLSEDER MARTIN
IPC: G11B7/26
Filed: 2001-02-13
Granted: 2002-12-11
Abstract: The invention relates to a method for producing a DVD comprised of two DVD substrates A and B. According to the invention, the first substrate (disc A) of the DVD is produced using a first injection aggregate (A), and the second substrate (disc B) of the DVD is produced using a second injection aggregate (B). In addition, one or both DVD substrates are coated, in particular, metallized in a coating station. One or both DVD substrates are provided with an adhesive in an adhesive application station. DVD substrates A and B are fed to at least one joining station provided for joining disc A and disc B to form a DVD. One or more walking beams (12) are provided for transporting DVD substrates A and B, whereby disc A and disc B rest on the walking beam(s) (12) one behind the other in a row and in an alternating manner (A-B-A-B-A-B...). In addition, the walking beam(s) is/are operated in a double step. With such a manner, the substrate A can be kept at the same position and the substrate is kept at another same position. Accordingly, it is able to perform title tracking without the cost of sensor and software.
Patent TW-461954-B (TW)
Title: Sintering device having a roller-type conveyor
Inventor: TAKANASHI KOICHI
IPC: F27B9/20
Filed: 2001-02-21
Granted: 2001-11-01
Abstract: The present invention is directed to a sintering device in which setters are pushed and conveyed by consecutively adding new setters. The sintering device comprises a plurality of axes and rollers forming a conveying mechanism. The axes are made of a fire resistant material and supported by a furnace, the rollers are made of a fire resistant material and rotatably supported by the axes, and the setters are supported and conveyed by the rollers.
Patent TW-506136-B (TW)
Title: Semiconductor device
Inventor: SHUKURI SHOJI
IPC: H01L27/115
Filed: 2001-02-21
Granted: 2002-10-11
Abstract: The invented semiconductor devices includes non-volatile memory elements (PM1, PM2), each having the first source electrode, the first drain electrode, the floating gate electrode and the control gate electrode and having different threshold voltages, and the read transistor elements (DM1, DM2), each having the second source electrode as well as the second drain electrode, using the floating gate as the gate, and having different mutual conductance according to the threshold voltage of the non-volatile memory element. The read transistor element adopts a switching state according to the electron injection state or the electron emission state, in other words, the writing state or the erasing state of the floating gate electrode. In a read operation, it is not necessary to flow a channel current according to the threshold voltage of the non-volatile memory element.
Patent TW-550890-B (TW)
Title: Accumulated phase measurement using open-loop phase estimation
Inventor: AGRAWAL AVNEESH
IPC: G01R29/08
Filed: 2001-03-07
Granted: 2003-09-01
Abstract: An apparatus and method for generating an accumulated phase measurement (406) of a communications signal over a predetermined time interval. A frequency estimate of the signal is generated (402); the frequency estimate is then converted to a coarse phase measurement (404, 642). A phase error is generated based on the frequency estimate (644); the phase error is then converted to a fine phase measurement (646). The coarse and fine phase measurements are summed to yield an accumulated phase measurement (648).
Patent TW-527329-B (TW)
Title: Method for the manufacture of a quartz glass body
Inventor: KROCK WOLFGANG
IPC: C03B8/04
Filed: 2001-03-14
Granted: 2003-04-11
Abstract: The invention relates to a procedure for manufacture of a quartz glass body by deposition of SiO2 particles on the outer surface of a cylindrical mandrel rotating around its longitudinal axis under formation of an essentially cylindrical porous blank with an inside bore hole, and by removing the mandrel and sintering of the blank, characterized in that the mandrel in the area of one of the ends of the successively forming blank is surrounded by a shaping element rotating at the same rotation velocity as the mandrel, such shaping element having a core area facing the blank which is at least partially removably embedded into the front face of the successively forming blank and which is removed before sintering after having widened the inside bore hole of the blank with a shape complementary to that of the core area.
Patent TW-490510-B (TW)
Title: Method and apparatus for producing electrolytic copper foil
Inventor: MOTOHASHI SHIGETADA
IPC: C25D1/04
Filed: 2001-05-07
Granted: 2002-06-11
Abstract: An electrolytic copper foil is electrodeposited onto the cathode drum surface of a cathode drum by feeding an electrolytic solution into the gap between the rotating cathode drum and an anode facing thereto and applying direct current between them, while the initial formation of the crystal nuclei of the electrolytic copper foil is performed by providing an auxiliary anode, an electrolytic solution receiver and a flashboard above the anode and applying an electric current between the cathode drum and the auxiliary anode and feeding an electrolytic solution separately onto the cathode drum surface from an electrolytic solution feeder placed near the auxiliary anode and discharging it through the gap between the cathode drum surface and the edge of the electrolytic solution receiver, keeping an electrolytic solution holdup between the cathode drum surface and the auxiliary anode by the electrolytic solution receiver and the flashboard.
Patent TW-I222697-B (TW)
Title: A capacitor having a TaON dielectric film in a semiconductor device and a method for manufacturing the same
Inventor: HAN SEUNG-KYU
IPC: C23C14/34
Filed: 2001-06-01
Granted: 2004-10-21
Abstract: The present invention relates to a manufacturing method for capacitors of semiconductor device; wherein, the capacitors are deposited with a layer of Ta metal film on the semiconductor substrate; then, crystallize the Ta metal film; forming the lower electrode by etching and developing partial area of the Ta metal film; forming TaON film on the lower electrode; and, forming an upper electrode on the TaON film. Thus, the present invention can achieve both high capacitance and reducing the current leakage.
Patent TW-486688-B (TW)
Title: A display unit device for a connectible and portable electronic device
Inventor: WANG JR-MING
IPC: G09G3/36
Filed: 2001-05-31
Granted: 2002-05-11
Abstract: A display unit device for a connectible and portable electronic device, which at least comprises: a display supporting individual or continuously display characteristics between each display unit device; a connecting axis located on any side of the display unit device. Two hollows are separately on the upper and lower surface of the connecting axis; two alignment tenons are separately located on the two ends of another side of the connecting axis. The tenons are embedded with the connecting axis of another display unit device; and an electrical contact as a connecting interface of the signal transfer between the display unit devices. At least a ring-shaped contact may be designed to be outside the inner wall of the hollow and the two alignment tenons. A flexible bus line may be the connecting interface for signal transmission.