baber/WOPTO huggingface dataset:
Patent JP-H08201198-A (JP)
Title: Semiconductor pressure sensor
Inventor: SAITO HIROSHI
IPC: G01L9/04
Filed: 1995-01-30
Abstract: PURPOSE: To reduce the temperature dependency of the offset voltage of a semiconductor pressure sensor. CONSTITUTION: In a semiconductor pressure sensor where a semiconductor pressure sensor chip with a diaphragm 1b and a cavity part 1a below the diaphragm 1b in adhered and fixed to a body 2 at a peripheral edge part 1c so that an inner opening 2c of a pressure introduction hole 2b formed on the bottom surface of a chip housing part 2a formed at the upper portion of the body 2 is blocked, an inclination 2d is formed on the bottom surface of the chip housing part 2a between the adhesion part of the body 2 and the semiconductor pressure sensor chip 1 and the inner opening 2c of the pressure introduction hole 2b so that the side of the inner opening 2c becomes lower, thus preventing an adhesive 3 from adhering to the side wall 1d of the cavity part 1a or the diaphragm 1b.
Patent JP-S55104914-A (JP)
Title: Manufacture of y-type zeolite
Inventor: MIYANOHARA ISAO
IPC: C01B39/24
Filed: 1979-02-07
Abstract: PURPOSE: To obtain the title product of faujasite type crystal suitable for use as catalyst and adsorbent by mixing an aq. alkali silicate soln. as a silica source and an aq. alkali aluminate soln. in the presence of alkali in an amt. specifying the molar ratio of M 2 O/Al 2 O 3  in the mixed soln.  
     CONSTITUTION: An aq. alkali silicate soln. as a silica source and an aq. alkali aluminate soln. are mixed in the presence of alkali in an amt. adjusting the molar ratio of M 2 O/Al 2 O 3  (M is an alkali metal) in the mixed soln. to 5 or more, pref. 7 or more. The mixed soln. is then held at 70°C or below, pref. 50°C or below for 30sec or more, esp. 2min or more in a gel-free state, and by adding water gel is formed. This gel is separated and mixed with an aq. alkali silicate soln. optionally mixed with alkali. The resulting slurry is aged at 0W70°C for 100hr. or less and heated at 20W110°C to be crystallized. 
     COPYRIGHT: (C)1980,JPO&Japio
Patent JP-S5295971-A (JP)
Title: Ohmic electrode of semiconductor element
Inventor: ASHIKAWA KAZUTOSHI
IPC: H01L21/283
Filed: 1976-02-09
Abstract: PURPOSE: To make easily the highly reliable electrode with low contact resistance by forming element ohmic electrode in use of Ti system materials. 
     COPYRIGHT: (C)1977,JPO&Japio
Patent JP-2000214298-A (JP)
Title: Charged particle beam irradiator, energy compensator used for such device, and method for irradiating object with charged particle beam
Inventor: GAMA ETSUTORA
IPC: A61N5/10
Filed: 1999-01-20
Abstract: PROBLEM TO BE SOLVED: To form a device easily and enable it to be repetitively used by allowing bars that constitute layers and are located in parallel with each other to come into and go from a region, where a charged particle beam passes through, by separate movement of the bars. SOLUTION: First of all, a tumor 25 is divided into lamellar regions of a prescribed thickness and a magnetic field is set up so that central plane of the first lamellar region can be irradiated with a charged particle beam 18. Then, the track of the particle beam 18 is approximately matched with the shape of an inner-side boundary surface of the first lamellar region by moving a bar 19b of an energy compensator 19. Moreover, an irradiation range is restricted within the lamellar regions by regulating a collimator 22. In this state, the central plane of the first lamellar region is irradiated with the particle beam 18 deflected by an electromagnet 16 for deflection in the X direction, and a particle beam 15 is turned off when the number of irradiated particles reaches a prescribed value.  Subsequently, only a prescribed amount of the particle beam 18 in the number of particles is radiated by increasing the thickness of an energy shifter 21 by a prescribed amount. Thereafter, such processes are repeated and the irradiation is completed.
Patent JP-S58128689-A (JP)
Inventor: YOSHIDA YASUSHI
IPC: A41D31/02
Filed: 1982-01-27
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。
Patent JP-S58128601-A (JP)
Inventor: YAMAGISHI HIROFUMI
IPC: F21V29/505
Filed: 1982-01-27
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。
Patent JP-S531514-A (JP)
Title: Key assignor for electronic instrument
Inventor: SUZUKI HIDEO
IPC: G10H1/18
Filed: 1977-02-09
Abstract: PURPOSE: To improve the range of usability of a key assignor by memorizing the soundassigned signals so that the channel number having been subjected the sound assignment may be changed selectively in accordance with the sound channel number of a sound producing circuit. 
     COPYRIGHT: (C)1978,JPO&Japio
Patent JP-H11210654-A (JP)
Title: Vacuum pump device provided with fine particle collecting function
Inventor: HIGUCHI TSUTOMU
IPC: F04C25/02
Filed: 1998-01-26
Abstract: PROBLEM TO BE SOLVED: To prevent reduction of a function caused by contaminating an exhaust gas treatment system with fine particle by collecting the fine particle in such a way that an auxiliary fine particle collecting passage is opened when a necessity for a pressure reducing operation operated by a vacuum pump is eliminated and a main exhaust operating passage and a circulating passage are formed. SOLUTION: When reaction generation and soluble crystallization work in a work container 1 are completed and a necessity for a pressure reducing operation operated by a vacuum pump 4 is eliminated, a closing valve 8 arranged in an auxiliary collecting passage 7 is opened. As a result, a main exhaust operating passage 5 of the vacuum pump is communicated with the auxiliary collecting passage 7, a large volume of gas delivered from the vacuum pump 4 is circulated through the main exhaust operating passage 5, the auxiliary collecting passage 7, a fine particle separator 3, the closing valve 8, a joining point 21, the main exhaust operating passage 5, and the vacuum pump 4 in order. In this time, pressure loss by gas circulation is few, a circulated gas flow rate becomes a flow rate closer to the maximum exhaust speed of the vacuum pump 4.  Fine particle deposited on the inside of the vacuum pump 4 by the gas circulating flow is carried to the fine particle separator 3 such as a cyclone shaped separator.
Patent JP-H04239264-A (JP)
Title: Digital copying machine
Inventor: NINOMIYA TOSHIO
IPC: H04N1/387
Filed: 1991-01-11
Abstract: PURPOSE:To automatically synthesize a necessary additional picture with an inputted original. CONSTITUTION:This device is equipped with a floppy disk device 5 which reads a floppy disk in which the additional picture such as a document characteristic of a secret document or the like is stored, and picture processor 3 which synthesizes the additional picture with the inputted original. Thus, the additional picture can be synthesized with the inputted original, the function of a digital copying machine can be improved, and a working efficiency can be improved.
Patent JP-H02190264-A (JP)
Title: Stone grinding device
Inventor: IKEDA SHUJI
IPC: B24C9/00
Filed: 1989-01-20
Abstract: PURPOSE:To shape even a natural stone, collected at a maintain, into the form and the shape of a natural stone present in a river for a long period by a method wherein after a stone to be ground is finish-processed by means of a big grainform first grinding material-contained mixture solution, precision finish processing is applied by means of a fine grainform second grinding material-contained mixture solution. CONSTITUTION:By spraying a big grainform first grinding material-contained mixture solution in a first storage tank 10 against a stone (crushed stone) 60 to be ground through a mixture solution feed device 50 by means of a sprayer 40 to apply coarse finish processing on the stone 60 to be ground. With a switching valve 8 switched, a fine grainform second grinding grinding material- contained mixture solution in a second storage tank 20 is sprayed against the stone 60 to be ground through the common mixture solution feed device 50 by means of the sprayer 40 to apply precision finish on the stone 60.
Patent JP-H07213288-A (JP)
Title: Oligonucleotide for detecting mycobaterium tuberclulosis and use thereof
Inventor: SEGAWA MASAYA
IPC: C12Q1/68
Filed: 1994-02-04
Abstract: PURPOSE:To provide the subject novel oligonucleotide capable of rapidly, surely and simply detecting Mycobacterium tuberculosis as a labeled probe or a primer because of hybridizing with the nucleic acid sequence of the specific protein gene of the Mycobacterium tuberculosis. CONSTITUTION:This novel oligonucleotide contains a part or all of nucleic acid sequences of formulas I-TV [A is adenine; C is cytosine, G is guanine; T is thymine; and T may arbitrarily be replaced with uracil (U)] or a part or all of their complementary sequences, can hybridize with the nucleotide sequence of the 35kDa protein gene of the Mycobacterium tuberculosis, and can rapidly, surely and simply detect the Mycobacterium tuberculosis as a labeled probe or a primer. The nucleotide is chemically synthesized by a phosphamidite method using a DNA synthesizer.
Patent JP-S56110225-A (JP)
Title: Manufacture of gaas wafer
Inventor: TSUJI TSUTOMU
IPC: H01L21/265
Filed: 1980-02-05
Abstract: PURPOSE:To improve the controllability of a carrier distribution by providing an N type GaAs layer having an impurity of Si or Sn on a semi-insulative GaAs substrate containing a high-resistance GaAs layer and forming an N' layer on the surface through ion injection. CONSTITUTION:A high-resistance GaAs layer and N type GaAs layers having an impurity of Si or Sn are sequentially laminated on a semi-insulative GaAs substrate. Following this procedure, Si is ion-injected into the N type layer surface and is thermally treated at 800 deg.C for 20min. As a result, a substrate with an N<+>/ N/N<-> layer sequentially grown is obtained. On account of the use of Si or Sn as an impurity, the profile 23 of a carrier distribution after ion injection does not indicate any change in the profile of a boundary between the N layer and a high resistance layer, compared with the profile 21 before ion injection. Thus a wafer having a satisfactorily controllable carrier distribution can be obtained.
Patent JP-S5296635-A (JP)
Title: Powder paint composition
Inventor: YOSHIKAWA JIROU
IPC: C09D7/12
Filed: 1976-02-10
Abstract: PURPOSE: A thermosetting epoxy powder paint composition characterized by the improved appearance bacause of the prevention of bubbling on the film surface comprises adding the specific water insoluble compound to the conventional powder paint composition. 
     COPYRIGHT: (C)1977,JPO&Japio
Patent JP-S55106733-A (JP)
Title: Method and device of spark erosion
Inventor: KOMEICHI SHIGEKI
IPC: B23H9/00
Filed: 1979-02-08
Abstract: PURPOSE:To form a three-dimensional curved surface can not be produced by wire-cut spark erosion, by combining the copying motion of an electrode which produces spark through a sheet material with the transfer of the material. CONSTITUTION:A guide 11, composed of a columnar center portion 12 and chamferred portions 13 on both ends, is held below a holder 14 and movable three-dimensionally against a work 15 by means of the holder 14. A planar sheet material 18, conductive and made of ductile material, is transferred while spark is produced through it.
Patent JP-H01187978-A (JP)
Title: Field-effect transistor
Inventor: HAYASHI KAZUO
IPC: H01L21/338
Filed: 1988-01-22
Abstract: PURPOSE:To obtain a field-effect transistor which is hardly subjected to the effect of the surface, having the feature of shallow narrow recess structure, and prevents field concentration at the end of an ohmic electrode and breaking of an element, by forming a trench shallower than the depth of a recess in the surface of an active layer between a gate electrode and at least one of a source electrode or a drain electrode. CONSTITUTION:In a field-effect transistor having recess structure, at least one or more of trenches 11 shallower than the depth DR of recess structure are shaped to the surface of a semiconductor active layer 3 between a gate electrode 6 and at least one electrode of a source electrode 4 or a drain electrode 5. The N-type semiconductor active layer 3 is formed onto a semi-insulating GaAs substrate 1 through a high- resistance buffer layer 2, and a recessed section is shaped in a gate-electrode 6 forming region in the active layer 3 while the trench 11 in depth D shallower than that DR of a recess is formed to the surface of the active layer 3 between the gate electrode 6 and an ohmic electrode (one or both of the source electrode 4 and the drain electrode 5). A distance LD between an ohmic-electrode edge section A and the edge section B of the trench 11 must be separated by size thicker than at least a surface depletion layer 7 at that time.
Patent JP-H04251943-A (JP)
Title: Method for multimolding of molded part in electronic component lead frame
Inventor: NISHIMURA HIROYUKI
IPC: B29C45/14
Filed: 1991-01-09
Abstract: PURPOSE:To reduce cost required for molding of a molded part and to uniform quality by sliding a lead frame off by an appropriate dimension in the longitudinal direction of the lead frame. CONSTITUTION:When arranged in parallel between a lower die 11 and an upper die, the lead frames A, B are slid off each other in the longitudinal direction by appropriate dimension L. Then, the cast opening 16a of each molding cavity 16 of one lead frame A and the cast opening 17a of each molding cavity 17 of the other lead frame B approaches each other along the longitudinal direction of the lead frames A, B; therefore, runners 18, 19 which connect each stock tablet filling chamber 13 to cast openings 16a, 17a of the respective molding cavities 16, 17 in the lead frames A, B can be shortened markedly.
Patent JP-H05202302-A (JP)
Title: Production of trimethine dye
Inventor: TAKASHIMA MASANOBU
IPC: C09B23/00
Filed: 1992-01-28
Abstract: PURPOSE:To obtain a compound useful as an intermediate for trimethine-based coloring agent, etc., efficiently and in high yield by reducing a specific compound with sodium baron hydride in a given mixed solvent into an unsaturated alcohol and dehydrating. CONSTITUTION:A compound of formula I (R1 to R4 are alkyl or aryl; R5 and R6 are H, alkyl, alkoxy or halogen) is reduced with sodium boron hydride in a mixed solvent of methanol and an ether-based solvent such as THF and/or an amide-based solvent such as DMF having >=4 solubility of the compound of formula I compared with methanol into an unsaturated alcohol, which is then dehydrated with an acid to give the objective compound of formula II (X<-> is counter anion).
Patent JP-H11214082-A (JP)
Title: Ac socket
Inventor: YOSHIDA NOBORU
IPC: H01R13/44
Filed: 1998-01-26
Abstract: PROBLEM TO BE SOLVED: To prevent in advance the generation of fire, while detecting heat generation due to the tracking phenomenon by embedding a heat detecting element in a surface region between a pair of blade insertion slits, and shielding an external commercial power source in response to the detecting signal. SOLUTION: A heat detecting element 4 such as a thermistor is embedded in a surface region between a pair of blade insertion slits 12 of a casing 11, and a surface of a printed wiring board 6 is provided with a temperature detecting circuit 5. The heat detecting element 4 is connected to the temperature detecting circuit 5, and the temperature detecting circuit 5 is connected to an excitation coil of a circuit breaker 7. When dust 3 is heaped and moisture is absorbed by the dust and the surface current flows between the pair of blades so as to generate the heat, a surface region between the slits 12 is excessively heated, and the heat detecting element 4 indicates a resistance value for resisting the rising temperature. Changed variable of the resistance value is transmitted as the detecting signal to the temperature detecting circuit 5.  When the changed variable exceeds a predetermined value, the signal is supplied to the circuit-breaker 7 so as to open the short-circuit between a fixed contact 141 of a blade rest and a fixed contact 151 of an external terminal 15 formed by a short-circuit bar 71.
Patent JP-S56109837-A (JP)
Title: Hard glass
Inventor: TAI SHINICHI
IPC: C03C3/091
Filed: 1980-02-05
Abstract: PURPOSE: To reduce the amount of gas emitted from hard glass at high temp. and provide a high transition point and superior meltability to the glass by specifying the contents of SiO 2 , Al 2 O 3  and alkaline earth metal oxides (RO) in the glass and adding an adequate amount of ZnO.  
     CONSTITUTION: This hard glass has a composition 98wt% of which consists of 48W62% SiO 2 , 10W20% Al 2 O 3 , 20W30% RO and 2W10% ZnO (where RO is alkaline earth metal oxides composed of 10W23% BaO and 5W10% SrO+CaO+ MgO). This glass has characteristics such as ≥720°C transition point and ≤52× 10 -7  thermal expansion coefft. at 0W300°C. It does not contain B 2 O 3  and Na 2 O substantially, the content of an alkaline earth metal oxide is restricted to a low level, and ZnO is added in an adequate amount, so the glass has superior suitability to seal bonding to metal. Accordingly, it is fit for the bulb of a halogen lamp, etc. 
     COPYRIGHT: (C)1981,JPO&Japio
Patent JP-H01189128-A (JP)
Title: Plasma cvd method
Inventor: TAKEBAYASHI MIKIO
IPC: H01L21/31
Filed: 1988-01-22
Abstract: PURPOSE:To form a CVD film even with a material having poor heat resistance and to improve passivation performance by holding a sample at 100 deg.C or lower by forcibly cooling it, and generating a low temperature plasma of predetermined plasma power density or more. CONSTITUTION:After a vacuum vessel 1 is evacuated by a vacuum discharge pump 7, mixture gas of monosilane, ammonia, nitrogen is introduced from a gas flowrate controller 3, and the pressure in the vessel 1 is held at a predetermined value by a butterfly valve 6. A sample 4 is forcibly cooled by coolant flowing in a cooling passage 13 in a sample base 8, the power of a heater 9 is controlled by a temperature controller 15 to 100 deg.C or lower (60 deg.C). High frequency power is supplied from a high frequency power source 11 to an electrode 10 to generate low temperature plasma having 300mW/cm<2> or more of plasma power density, thereby forming a plasma SiN film on the sample 4.
Patent JP-H06230795-A (JP)
Title: Voice recognizing method using basic hidden markov model
Inventor: HONMA SHIGERU
IPC: G10L15/06
Filed: 1993-01-29
Abstract: PURPOSE:To provide the voice recognizing method using basic hidden Markov model(HMM) of high-speed, high recognition accuracy. CONSTITUTION:This voice recognizing method is provided with a learning processing part 6 for analyzing the distribution of continuous time in each state by learning the output probability and transient probability of the basic HMM from a voice analysis part and learning data, parameter storage part 7 storing the output probability, transient probability to be used as an initial value when starting the learning of the basic HMM, output probability, transient probability outputted from the processing part 6, distribution of continuous time in each state, minimum continuous time and maximum continuous time, recognition processing part 9 for performing continuous time control according to the transient probability different at every resident time by using the transient probability at every resident time and the output probability taken out of the storage part 7, and recognized result output part 10 for outputting the recognized result according to the generation probability of respective candidates, the voice recognizing method estimates the transient probability at every resident time so that the distribution of continuous time in each state calculated from the transient probability at every resident time can be coincident with the distribution of continous time in each state at the time of learning extracted from the storage part 7.
Patent JP-H02193036-A (JP)
Title: Cut line detector for head lamp or the like for automobile
Inventor: MUNEKI KOICHIRO
IPC: G01M11/06
Filed: 1989-01-23
Abstract: PURPOSE:T enable accurate extraction of a changing ridge line and a weak maximal point accurately by searching a maximal point in a fixed area containing respective cut line point trains along a fixed path for a horizontal component and a skew component of a cut line. CONSTITUTION:A light distribution pattern projected on a screen 1 is taken with a camera 2. A video signal of the camera 2 is inputted into a feature quantity extraction circuit 3. In the circuit 3, the video signal of the camera 2 is converted 9 into digital from analog and then, into a density 10. Then, an output of the circuit 10 is inputted into a space differentiation circuit 12 via a smoothing circuit 11. A cut line as feature contour of the light distribution pattern coincides with a ridge line of a differentiated value distribution of a LOG value of a brightness distribution thereof. An angle between a horizontal line and a skew line of the cut line is deviated by about 10-15 deg. and a point forming a cut line reaches a maximum value when a feature quantity is traced along a path in a direction traversing the cut line. Therefore, a center point of a maximal area in the path is determined and a curved is determined connecting a train of the center points to obtain a straight line in contact with the curve thereby enabling detection of the cut line.
Patent JP-S56110748-A (JP)
Title: Permanently hydrophilic porous sintered product
Inventor: OCHIAI TAKEHARU
IPC: C08J9/24
Filed: 1980-02-08
Abstract: PURPOSE: A porous sintered product with excellent permanent water absorbing ability and strength, which comprises a thermoplastic polymer with large wet tensile strength, and a high-molecular surfactant.  
     CONSTITUTION: A thermoplastic resin powder of wet tensile strength ≥20dyne/cm, HLB≥8 and Mw≥2,000, preferably >500, containing a high molecular surfactant, is sinter molded. It is preferable for said resin powder to have particle size ≥200 mesh. An acrylonitrile thermoplastic resin containing 40W98wt% acrylonitrile is preferable, because it is most hydrophilic among water-insoluble thermoplastic resins. The surfactant may be added in a process from polymerization to sintering, or to a sintered product after sintering. At least 0.01wt% surfactant gives permanent water absorbing property. 
     COPYRIGHT: (C)1981,JPO&Japio
Patent JP-H09214776-A (JP)
Title: Decoding device
Inventor: TANIMIZU HIROMI
IPC: H04N1/419
Filed: 1996-01-30
Abstract: PROBLEM TO BE SOLVED: To provide a decoding device where a hardware scale is small and high-speed decoding is executed in a decoding device used in a facsimile, etc. SOLUTION: At first, a change point address is detected from encoding data stored in RAM 3 by a software through the use of MPU 1 and ROM 2 and stored in RAM 3. The change point addresses of one line is stored and, then, the change point address is read from RAM 3 through the use of DMAC 4 so as to generate picture data in terms of hardware in a picture data generating part 5. Thus, the decoding processing is executed to a software part and the hardware part separately, so that the hardware can be made small and decoding is executed at high speed.