baber/WOPTO huggingface dataset:
Patent JP-S63263435-A (JP)
Title: Load detector
Inventor: TSUTSUI SHINSAKU
IPC: G01L1/22
Filed: 1987-04-22
Abstract: PURPOSE:To facilitate detector formation by boring an through hole in a pyramidal rigid body from one flank to the other corresponding flank, providing strain gauges as load detectors on the remaining opposite thin flat plates, and forming cuts for detection sensitivity adjustment in the flat plate end parts of gauge flanks. CONSTITUTION:The through hole 7 is bored in the pyramidal rigid body from one flank to the other corresponding flank and rigid body parts 31 and 32 which are left at both ends support the thin flat plates 8 and 9 remaining above and below the through holes 7. Then the strain gauges 10e1 and 10c3, and 10e2 and 10c4 are provided on the surfaces of the flat plates 8 and 9 at specific distances from one rigid body part 32 and used as the load detectors. Then the cut parts 18 and 19 are formed in the edge parts of the flat plates 8 and 9 where the strain gauges 10e1 and 10e2 are positioned so as to adjust the sensitivity, which is adjusted after a parallel flat plate structure 3a' is formed, thereby eliminating the need for severe size accuracy control at the time of the formation of the flat plate structure 3a'.
Patent JP-H02275621-A (JP)
Title: Method of controlling uniformity of in-plane p-distribution of p-type silicon crystal
Inventor: KATO KOJI
IPC: C30B13/10
Filed: 1989-04-17
Abstract: PURPOSE:To uniformize specific resistance distribution within surface of a P-type silicon single crystal by adding an N-type impurity (P) to a P-type crystal (P-type impurity: B) or adding the P-type impurity (B) to the N-type crystal (N-type impurity: P). CONSTITUTION:An absolute B concentration and an absolute P concentration of a silicon crystal for semiconductor containing B as a P-type impurity and P as an N-type impurity, respectively are set to f(B) and f(P), respectively, and DELTAp of P type in the case of f(B)>>f(P) and DELTAp N type in the case of f(P)>>f(B) are set to F%, where DELTAp=(pmax-pmin)/pminX100(%) and pmax and pmin are the maximum and minimum values of specific resistance on the same plane. Then, the absolute B concentration A (atmos/cc) and the absolute P concentration C at the center within the crystal plane allow P or B corresponding to the relation given by C=AXE/(100+E)X(100+F)/F to be doped. Thus, it becomes possible to uniformize in-plane distribution of specific resistance of P-type silicon crystal.
Patent JP-S60241564-A (JP)
Title: Self-propelled roller driving device
Inventor: SHIRAISHI ATSUSHI
IPC: F16H19/02
Filed: 1984-05-16
Abstract: PURPOSE:To accomplish low-priced and precise scanning feed by using three or more self-propelled rollers to always obtain designated contact pressure. CONSTITUTION:When a driving shaft 2 is rotated in one direction, self-propelled rollers 3A-3C contacting one another with a pitch angle of theta are respectively rotated in a designated direction by shafts 4A-4C, and further a self-propelled roller support portion 1 is moved in a designated direction by rotation of the driving shaft 2 on the same principle as the movement of a screw caused by rotation of the screw, because suitable contact pressure is applied to the rollers. Thus, a scanning portion 10 connected by a transmission member 11 is also moved in direction of an arrow X1 or X2 to perform a specified scanning. In this arrangement, even if there is an eccentric shifting of the driving shaft 2 or the assembling accuracy is bad, the driving shaft 2 is located at the central point formed by three self-propelled rollers, so that the shaft is uniformly brought into contact with the rollers.
Patent JP-S61257069-A (JP)
Title: Correcting method for quantity of light variation
Inventor: HONDA TATSUO
IPC: H04N1/04
Filed: 1985-05-10
Abstract: PURPOSE:To correct the read image information according to the quantity of light variation of the light source to be used for reading device and to minimize the read density error by providing an optical sensor a shading correction plate and a sample and hold circuit. CONSTITUTION:Before reading an original, the output of the shading correction plate 12 provided prior to the read start position of outside range of an original mounting area is fetched to a line photoelectric transducer 3, converted into an electrical signal and stored at a memory 6 through an amplifier 4 and an A/D converter 5. At the same time, the quantity of light of fluorescent lamp is measured by an optical sensor 2 and inputted to the sample and hold circuit 8. Next,the reading of the original in a sub-scanning direction is started, and inputted to the sample and hold circuit 7 through the sensor 2. The quantity of light of circuits 7 and 8 are compared by a divider 9 and a factor is obtained. The factor and the value obtained by A/D-conversion of the video signal of the correction plate 12 stored in the memory 6 are multiplied by a multiplier 11, and the correction is performed to the shading waveform. In this way, it is possible to obtain the image information with less read density error due to the variation of the quantity of light.
Patent JP-S61251549-A (JP)
Inventor: RAABI BUUNINI
IPC: C04B11/028
Filed: 1986-04-25
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。
Patent JP-H1146102-A (JP)
Title: Dielectric filter, dielectric duplexer and communication equipment
Inventor: ATOKAWA SUKEYUKI
IPC: H01P1/213
Filed: 1998-04-09
Abstract: PROBLEM TO BE SOLVED: To obtain the dielectric filter with a low insertion loss and a high attenuation where deterioration of the Q0 of the resonance system is less, to provide the dielectric duplexer and the communication equipment. SOLUTION: A dielectric resonator 5 is connected electrically to an input terminal 1 via a coupling capacitor C1. A dielectric resonator 6 is connected electrically to an output terminal 2 via a coupling capacitor C3. The dielectric resonators 5, 6 are connected electrically via a coupling capacitor C2. A voltage controlled terminal 3 is connected electrically to one terminal of a varactor diode D1 and the coupling capacitor C1. An anode of the varactor diode D1 is connected electrically to the dielectric resonator 6. That is, the varactor diode D1 is used for a multi-path circuit element of a filter 15.
Patent JP-S59224017-A (JP)
Inventor: KUWABARA KAZUYOSHI
IPC: H01H1/38
Filed: 1983-06-03
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。
Patent JP-H09283655-A (JP)
Title: Semiconductor device
Inventor: TAKAHASHI NORIYUKI
IPC: H01L23/12
Filed: 1996-04-19
Abstract: PROBLEM TO BE SOLVED: To improve the adhesion of a semiconductor pellet to a substrate and the adhesive strength of the pellet to the substrate. SOLUTION: This is a semiconductor device, wherein a semiconductor pellet 3 is mounted on the center part on the surface side of a substrate 2, wherein connection pads 2a and 2b are respectively formed on both surfaces of the surface and rear of the substrate 2 and both of the pads 2a and 2b are connected with each other via a multilayer wiring structure 2c formed in the interior of the substrate 2, via a bonding material 5 and at the same time, a gold plating or the like is applied to the center part, whereby an island 1 formed at a high flatness is formed and with the pellet 3 connected electrically with the pads 2a via wires 4, it is hermetically sealed with a molding resin 6 and a ball grid array consisting of a plurality of metal balls 7 is arranged on the pads 2b on the rear of the substrate 2.
Patent JP-2000168174-A (JP)
Title: Printer
Inventor: CHIBA NORIYOSHI
IPC: B41J5/30
Filed: 1999-04-05
Abstract: PROBLEM TO BE SOLVED: To reduce the cost of a printer while increasing the printing speed thereof. SOLUTION: A part requiring real time processing and high speed processing in the processing executed in a printer 3, that is, the processing receiving image data from a host 1 to accumulate the same in a receiving buffer 21 and reading the image data from the receiving buffer 21 to perform expansion, edge smoothing or the correction of gradation to send the same to a printing engine 27 in matching relation to the printing speed of the printing engine is executed by exclusive hardware circuits 11, 13, 15, 17, 19 but not by a CPU 23. The CPU 23 performs a part not requiring high speed processing but requiring flexible processing, for example, the state monitor of the printing engine 27, the control of printing start, the number of printing sheets or the calculation of toner consumption quantity.
Patent JP-H07282283-A (JP)
Title: Character image editing processing
Inventor: KANDA YOSHIMICHI
IPC: G06F17/21
Filed: 1994-04-13
Abstract: PURPOSE:To widen the row spacing of characters and output a character image document image which is narrow in row spacing. CONSTITUTION:This processor is equipped with a scanner 103 which reads an image in the form of a digital signal, a row lower-end line detection part 105 which detects a line at a row lower end of character images arranged in the main scanning direction of the image, a line insertion part 107 which widens the row spacing by repeatedly inserting a line following the line at the row lower end, a 2nd image data temporary storage part 108 which stores image data widened in row spacing by the line insertion part 107, and a recording part 19 which records and outputs the image data recorded in the 2nd image data temporary storage part 108.
Patent JP-H07280917-A (JP)
Title: Method for retransmitting gps radio waves to gps-radio-wave unreceivable space
Inventor: IIJIMA SHINJI
IPC: H04B7/15
Filed: 1994-04-13
Abstract: PURPOSE:To obtain a retransmission method in which GPS radio waves can be received even in a radio-wave unreceivable space, in which own position can be confirmed quickly after they have gone out from the radio-wave unreceivable space and in which the maintenance, the inspection, the repair and the like of a GPS receiver can be performed indoors. CONSTITUTION:GPS radio waves which are sent out from GPS satellites 1 are received by an external antenna 2 which has been installed outdoors, and the received radio waves are retransmitted into a radio-wave unreceivable space 4 such as a building, a tunnel or the like from an internal antenna 5 installed inside the radio-wave unreceivable space 4 via a retransmitting device 3.
Patent JP-H02275628-A (JP)
Title: Dry etching method
Inventor: WATANABE YOSHIMICHI
IPC: H01L21/302
Filed: 1989-04-17
Abstract: PURPOSE:To enable selective etching to be made even for an assembled semiconductor device by irradiating an electron beams to form a contamination layer on a material layer surface to be subjected to dry etching. CONSTITUTION:An element region is insulated by an insulation separation layer 5, P-type regions 6 and 7 which become anode of two diodes dare provided, an N<+>-type contact region 4 is provided for coating with an oxide film 8, and an Al wire 9 is provided for coating with a nitriding film 10. Then, by irradiating only an electron beam 11, a carbon contamination layer 12 is formed only at the irradiated part and carbon C does not react even with F* radical so that a selective etching can be performed. Thus by performing CF4+O2 plasma etching with the contamination layer 12 as a mask, an opening 13 is formed at the nitriding film 10, thus exposing the Al wire 9. Then, the contamination layer 12 is eliminated and the Al wire 9 is etched, thus forming a cut part 14, thus achieving a selective etching even for a semiconductor device assembled into a case.
Patent JP-S59223493-A (JP)
Inventor: MATSUMOTO NAOAKI
IPC: G10H1/36
Filed: 1983-06-03
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。
Patent JP-S59222351-A (JP)
Inventor: KIMOTO KATSUNORI
IPC: H05K3/02
Filed: 1983-06-01
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。
Patent JP-S60240390-A (JP)
Title: Welding method of copper-lined piston
Inventor: ISHII MASAMI
IPC: B23K15/00
Filed: 1984-05-15
Abstract: PURPOSE:To stabilize the quality of a product by inserting a thin lead sheet into the contact part between copper and Al or Al alloy then welding the contact part by an electron beam. CONSTITUTION:The thin lead sheet 5 having about 0.1-0.2mm. thickness is inserted between an upper piston part 2 made of copper and a lower piston part 3 made of Al. The sheet and the piston parts are then welded by electron beam welding 6. The thin sheet contg. about 99.9% lead is used for the lead sheet and the electron beam welding is executed under suitable welding conditions. The sheet 5 acts consequently as a diluent to weld the Al part 3 and the copper part 2 to each other. A weld zone 7 which produces no clearances is thus formed in the contact part. The weld strength is considerably increased by the above-mentioned method and since the variance of the joint strength is decreased, the product quality is improved.
Patent JP-H07306183-A (JP)
Title: Hydrogen isotope ratio analyzing method
Inventor: FUTAMI HIROSHI
IPC: G01N27/62
Filed: 1994-05-12
Abstract: PURPOSE:To detect the concentration of isotope with high sensitivity by subjecting only such molecules as containing a specified isotope, in gas molecules and easily gasifiable molecules containing light hydrogen, heavy hydrogen and tritium, to electronic excitation using the isotope shift and then ionizing only the excited molecules during next excitation and detecting the ionized molecules. CONSTITUTION:A specifically delayed pulse is fed from a pulse generator 5 to YAG lasers 6, 7 for excitation in order to oscillate them. Visible lights are emitted from optical parametric oscillation crystals 8, 10 and only the former is converted through a second harmonic crystal 9 into an ultraviolet ray. Subsequently, they enter into a vacuum chamber 4 as a 300nm or shorter laser light for selective excitation and a 430nm or shorter laser light for ionization, respectively. A sample gas 1 is projected sequentially with wavelengths omegaH2, omegaD2, omegaHD, for exciting light hydrogen, heavy hydrogen and tritium selectively. They are excited and ionized selectively through irradiation with an ionized laser light before being detected by means of a time-of-flight mass spectrometer 12. The isotope ratio is determined based on the concentration ratio of respective molecules.
Patent JP-S5641039-A (JP)
Title: Slider of piston or the like
Inventor: SEKIGUCHI YOSHIO
IPC: B21H7/18
Filed: 1980-07-18
Abstract: PURPOSE:To form annular grooves of high strength at one time with ease by forming a plurality of annular rings on the outside diameter of a shaft through forming by rolling. CONSTITUTION:A relief 2 is beforehand formed in the part of a shaft 1 of a circular section by steel material and of predetermined length where no grooving is applied. Thence, the shaft 1 is formed by rolling to form a purality of annular grooves 3. Thence, the part having built up owing to the formation of the annular grooves 3 is finished by grinding or the like. Hence, unlike the case of machining the annular grooves 3, there is no formation of chips and a plurality of the annular grooves 3 are formed at one time without requiring any degree of skill. The formed annular grooves 3 are made stronger by plastic formation.
Patent JP-H02276701-A (JP)
Title: Waste discharging equipment in multistoried building
Inventor: IIJIMA YOSHIAKI
IPC: B65F5/00
Filed: 1989-04-18
Abstract: PURPOSE:To discharge waste without waiting time by providing a waste throwing-in equipment in every story, and by passing round a waste gathering cage to each story at a given time interval so as to automatically transfer and discharge the waste in the throwing-in equipment to a waste storage device, and also so as to dispose waste with priority when the quantity of waste in the throwing-in equipment in a story reaches a prescribed amount. CONSTITUTION:A waste gathering cage 2 is elevated or lowered to a prescribed story at a given time interval set in a timer which has been incorporated in a control panel 5. When the cage reaches a story, the waste discharge port of the waste throwing-in equipment 6 in the story automatically communicates with the waste throwing-in port of the waste gathering cage 2 to discharge waste into the cage 2. Then, the waste gathering cage 2 is lowered to discharge waste into a waste storage device 7. And, to each waste throwing-in equipment 6, a counter for counting the number of times of opening/closing of a door 11 and a waste level sensor are arranged. When the number of times or the level reaches a prescribed value, a control panel 5 carries out, with priority, the waste gathering of the concerned throwing-in equipment even in the timer setting time zone. By this constitution, the waiting time can be eliminated.
Patent JP-S59222306-A (JP)
Inventor: AKITA YASUSHI
IPC: B27L1/08
Filed: 1983-06-01
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。
Patent JP-S63265420-A (JP)
Title: Manufacture of semiconductor thin-film crystal layer
Inventor: YOSHII TOSHIO
IPC: H01L21/263
Filed: 1987-04-23
Abstract: PURPOSE:To form a crystal layer having excellent crystallizability and surface smoothness onto an insulating film by shaping opening sections in the insulating film on a substrate in a dotted manner in a line and selectively forming semiconductor single crystals into the opening section previously. CONSTITUTION:An SiO2 film (an insulating film) 12 is formed onto a semiconductor substrate 11, and an opening section 13 is shaped to the SiO2 film 12. The opening sections 13 are formed in a dotted manner in a line. Si single crystals 14 are grown and shaped selectively only into the opening sections 13. An LPCVD method is used for crystal growth at that time, and the Si single crystals 14 are grown until the opening sections 13 are buried and flattened. A polycrystalline Si thin-film 15 is formed onto the whole surface, and an SiO2 film 16 is deposited onto the thin-film 15 as a cap film. The sample is annealed by scanning it with quasi linear electron beams 17, and the Si thin-film 15 is melted and recrystallized. Accordingly, the polycrystalline Si thin-film 15 can easily be changed into a single crystal, employing the Si single crystals 14 in the opening sections 13 as the seeds of growth.
Patent JP-S5325211-A (JP)
Title: Production of high tensile cold rolled steel sheet with excellent ductility by continuous annealing
Inventor: TAKECHI HIROSHI
IPC: C21D6/00
Filed: 1976-08-20
Abstract: PURPOSE: To obtain a steel sheet with high tensile strength and excellent ductility b by hot rolling a steel slab of a prescribed compsn. contg. B and Ti; coiling the hot rolled plate at a specified temp.;and then carrying out annealing at a specified temp. 
     COPYRIGHT: (C)1978,JPO&Japio
Patent JP-S62254467-A (JP)
Title: Manufacture of thin film transistor
Inventor: SHINPO MASAFUMI
IPC: H01L29/786
Filed: 1986-04-28
Abstract: PURPOSE:To increase the yield while improving the evenness and making redundant interconnection possible by a method wherein, in case of using a substrate in large space, a semiconductor film is made of an alpha-Si film and the like at low temperature to be loaded with a large spaced substrate while necessary part (e.g., transistor part) is beam--annealed by laser or the like. CONSTITUTION:After depositing an alpha-Si film 2 on an insulating substrate 1, necessary part is beam-annealed to form a polycrystalline or single crystal Si film 20 while a gate insulating film 5 is formed to be left in an island state. Selective ion implantation is conducted using an island type film 5 as a mask while in case of forming an n channel TFT, n type impurity such as P, As, etc., is added to form n<+> Si films 25. The implanted impurities can be effectively activated by beam--annealing process while the cross-interconnections are performed between the n<+> Si films 25 or a second conductive film 30 and a third conductive film 40 through the intermediary of an interlayer insulating film 6. Through these procedures, a TFT device using a polycrystalline or single crystal semiconductor thin film can be provided with large space and excellent evenness and high yield by means of beam annealing process. Especially, the probability of disconnection to be occured can be lessened by redundant interconnections available while the space expansion can be facilitated by low resistance.
Patent JP-H07304169-A (JP)
Title: Droplet jet device
Inventor: AOKI NOBUO
IPC: B41J2/055
Filed: 1994-05-12
Abstract: PURPOSE:To perform the electric connection of metal electrodes of a piezoelectric element plate with an external drive circuit. CONSTITUTION:An array with a plurality of ink passages is formed by connecting a lower piezoelectric ceramic plate 101 with an upper piezoelectric ceramic plate 102. The height of side walls 113 is decreased gradually in the vicinity of an end face 116 of the lower piezoelectric ceramic plate 101 and formed to be on the same level as channel bottom faces completely. Metal electrodes 111a and 111b are formed almost on the upper halves of the surfaces of the side walls 113, and connecting electrodes 112a and 112b connected with the metal electrodes 111a and 112b are formed on the sections where the side walls 113 are inclined and on the channel sections among the faces. Conductive patterns of a flexible substrate connected with an external drive circuit are connected with electrodes 112a and 112b. The upper piezoelectric ceramic plate 102 is also constituted in the same manner.
Patent JP-H03296986-A (JP)
Title: Semiconductor storage device
Inventor: SAKURAI YOSUKE
IPC: G11C11/401
Filed: 1990-04-13
Abstract: PURPOSE:To attain relatively high speed access without adding a special external circuit and without imposing burden on a CPU by internally transferring the information of ROM part to a RAM part which is mounted on the same semiconductor substrate together with the ROM part and making the RAM part accessible for the outside. CONSTITUTION:The ROM part 1 having relatively low access speed and the RAM part 2 having relatively high access speed are made to exist together, and the read-out information of ROM part 1 is internally transferred to the RAM part 2 by the output address signal 9 of an incorporated address generating means 10 in response to the power-on. Consequently, data keeping in the ROM part 1 can be read out in accordance with the access speed of RAM part 2 which is capable of relatively operating at high speed for the outside. By this procedure, the high speed access is relatively made possible without adding the special external circuit and also without imposing burden on the CPU.
Patent JP-H01270272-A (JP)
Title: Manufacture of mis type semiconductor device
Inventor: MAKINO TAKAMI
IPC: H01L29/78
Filed: 1988-04-20
Abstract: PURPOSE:To reduce the generation of hot carrier, and improve device characteristics, by forming a side wall after a source layer and a drain layer of low concentration are formed, and selectively growing a source region and a drain region of high concentration containing phosphorus. CONSTITUTION:On a semiconductor substrate 11, a gate electrode 13 coated with an insulating film 21 is formed via a gate insulating film 12; then a source layer 17 and a drain layer 18 of low concentration are formed by implanting arsenic ions or phosphorus ions; after a side wall insulating film 22 is formed on the side wall of a gate electrode 13, a source region 15 and a drain region 16 of high concentration containing phosphorus are selectively formed on the source layer 17 and the drain layer 18. Thereby, the generation of hot carrier is reduced, device characteristics such as threshold voltage and mutual conductance are stabilized, and the short channel effect is reduced.