baber/WOPTO huggingface dataset:
Patent TW-241260-B (TW)
IPC: C07C231/12
Filed: 1993-02-23
Granted: 1995-02-21
Abstract: PCT No. PCT/US93/01425 Sec. 371 Date Aug. 19, 1994 Sec. 102(e) Date Aug. 19, 1994 PCT Filed Feb. 23, 1993 PCT Pub. No. WO93/16997 PCT Pub. Date Sep. 2, 1993.A novel process for the preparation of  alpha -substituted arylacetamides wherein the substituent is an aromatic group or a 1-alkenyl or 1-cycloalkenyl group and wherein the nitrogen atom carries no hydrogen atoms comprises the reaction of an arylacetamide having one or two hydrogen atoms on the  alpha -carbon atom, wherein the nitrogen atom carries no hydrogen atoms, with a strong base in an inert aprotic organic solvent, followed by reaction with a zerovalent transition metal catalyst and then with a compound of the formula R4-X, wherein R4 is selected from aromatic groups, 1-alkenyl groups and 1-cycloalkenyl groups and X is a particular leaving group, especially a triflate group. The  alpha -substituted arylacetamides are useful as intermediates in the preparation (by reduction) of  alpha -substituted arylethylamines, e.g., 1-substituted-2,3,4,5-tetrahydro-1H-3-benzazepines, having pharmacological activity. Certain benzazepines wherein the 1-substituent R4 is 1-(1-cycloalkenyl) are novel.
Patent TW-223021-B (TW)
IPC: A61K8/46
Filed: 1993-03-05
Granted: 1994-05-01
Abstract: A hair shampoo composition is provided, which comprises, in addition to water, one or more C6 to C34 acyl lactylates and one or more alkyl polyglycoside(s) where the alkyl group contains 5 to 30 carbon atoms and the ratio of acyl lactylate to alkyl polyglycoside is greater than or equal to 1:6. The shampoo provides a foam which is less coarse than that normally associated with compositions containing alkyl polyglycosides.
Patent TW-389695-B (TW)
Title: Anti-inflammatory factor, method of isolation, and use
Inventor: BECK LEE R
IPC: A61K35/54
Filed: 1993-11-15
Granted: 2000-05-11
Abstract: The invention relates to an anti-inflammatory factor isolated from milk and to methods for using this factor to remove adhered neutrophils from endothelial cells, to prevent the emigration of cells from the vasculature and to suppress the response of lymphocytes to foreign anigens.
Patent TW-311132-B (TW)
IPC: A61P33/02
Filed: 1993-11-19
Granted: 1997-07-21
Abstract: The present invention relates to compounds of structure related to that of 15-deoxyspergualine, as new industrial products. These new compounds correspond to the formula: <IMAGE>  in which:     - n is equal to 6 or 8, - A represents a single bond, CH2, CHF, CH(OH), CH(OCH3), CH2NH or CH2O,  and their addition salts. These new compounds are useful as immunosuppressants.
Patent TW-263493-B (TW)
Title: Novel derivatives of 3-hydroxyanthranilic acid, methods and intermediates for their preparation, and pharmaceutical compositions for treating neuro degeneration
Inventor: BJORK SUSANNA KARIN MARIA
IPC: A61K31/196
Filed: 1994-03-11
Granted: 1995-11-21
Abstract: The present invention relates to novel derivatives of 3-hydroxyanthranilic acid, 3-HANA, of the general formula I (see claim 1) in which R1 and R2 are the same or different and selected from H, alkyl, aryl and arylalkyl; X and Y are the same or different and selected from alkoxy, aryloxy, alkyl, alkylthio, arylthio, fluoroalkyl, halogen, cyano, OSO2CH3, OSO2CF3, OCF3 and SCF3 with the proviso that the compound of formula I in which R1 and R2=H, X=Br and Y=Me is excluded; or a pharmaceutically acceptable salt thereof, methods and intermediates for their preparation, novel pharmaceutical compositions and the use thereof for inhibiting the enzyme 3-hydroxyanthranilate oxygenase, 3-HAO, responsible for the production of the endogenous neurotoxin quinolinic acid, QUIN.
Patent TW-235388-B (TW)
Title: Programmable high performance data communication adapter for high speed packet transmission network
Inventor: CLAUDE GALAND
IPC: H04L29/06
Filed: 1994-03-23
Granted: 1994-12-01
Abstract: A high performance data packet buffering method and a programmable data communication adapter for high speed packet transmissionnetworks are disclosed. The line adapter includes programmableprocessing means, for receiving and transmitting data packets of fixed or variable length. This system is characterized in that it comprises - means for buffering (132) the data packets; - means for identifying the buffering means and the data packets in the buffering means; - means for queueing (Figure 15) in storing means (131) the identifying means in a single instruction; - means for dequeueing (Figure 16) from the storing (131) means the identifying means in another single instruction; - means for releasing the buffering means; Each instruction comprises up to three operations executed in parallel by the processing means: - an arithmetical and logical (ALU) operation on the identifying means; - a memory operation on the storing means, and - a sequence operation.
Patent TW-258805-B (TW)
Title: Instructions sorter of multi-processor computing system
Inventor: JANG KANG-WEI
IPC: G06F9/30
Filed: 1994-07-22
Granted: 1995-10-01
Abstract: An instruction sorter of multi-processor competing system, that includes a bus, multiple master or slave processor commonly installed on the bus, and other memory or I/O subsystem, includes: (1) a memory stack with multi-layer memory buffer, that can receive and store instruction sent by any one of the master or slave processor from the bus in time order, and output memory content of buffer under control in same time order; (2) a memory stack control logic with control logic circuit controlling the memory stack to receive instruction sent by any one of the master or slave processor from the bus, and output of buffer content of the memory stack; It features that the instruction sorter is installed in one bus processor on the bus, and the control logic of the instruction sorter receives any instruction sent by the master or slave processor via the bus, immediately storing the instruction into the memory stack, and after a few specified clock signal period of the bus, based on checking result of those instructions to determine if the instruction is replace by next incoming instruction. When the instruction checking result shows that the instruction has nothing to do with master or slave processor where the instruction sorter is, the instruction can be replaced by next instruction.
Patent TW-244390-B (TW)
Title: Permanent magnet, production method thereof and material therefor
Inventor: TAKAHASHI YASUNORI
IPC: H01F1/059
Filed: 1994-08-26
Granted: 1995-04-01
Abstract: The material for permanent magnet according to the present invention comprises an acicular iron powder having successively on the surface (1) a coated layer of aluminum phosphate, (2) a diffused layer of rare earth element or a diffused layer of rare earth element.boron or a diffused layer of rare earth element.boron.nitrogen, and (3) a coated layer of aluminum phosphate. The material for permanent magnet can be produced by (a) a step of mixing and covering an acicular goethite (FeOOH) crystal with aluminum phosphate, (b) a step of preparing an acicular iron powder coated with a layer of aluminum phosphate by reducing under hydrogen atmosphere at 300-500 deg.C the acicular goethite (FeOOH) crystal covered by the aluminum phosphate, (c) a step of diffusing a rare earth element or a rare earth element and boron into the surface layer of aluminum phosphate by heating under argon atmosphere at 650-1000 deg.C the acicular iron powder coated with a layer of aluminum phosphate in the presence of the rare earth element or the rare earth element and boron, (d) a step of mixing and covering the rare earth element diffused powder or rare earth element and boron diffused powder with aluminum phosphate, and (e) a step of coating the rare earth element diffused powder or rare earth element and boron diffused powder with aluminum phosphate by heating under argon atmosphere at 300-500 deg.C the rare earth element diffused powder or rareearth element and boron diffused powder covered by the aluminumphosphate.
Patent TW-247971-B (TW)
Title: Flash memory cell process
Inventor: CHEN HUEI-HWANG
IPC: H01L27/115
Filed: 1994-11-14
Granted: 1995-05-21
Abstract: An asymmetric flash memory cell includes: one first-type memory cell body with one drain region, one source region and one channel region between the drain and source region; one stacked gate installed on the channel region, which from top to down has one punchthrough insulator, one floating gate, one gate insulator and one control gate; It features that one first-type implantation region installed on boundary ofthe drain region and region neighboring to boundary of the drain region.
Patent TW-275711-B (TW)
Title: Semiconductor IC device and its manufacturing method
Inventor: SEKIGUCHI TOSHIHIRO
IPC: H01L21/8242
Filed: 1995-08-29
Granted: 1996-05-11
Abstract: A manufacture method for semiconductor IC device on a semiconductor substrate with circuit layer which comprises of: a) Process to form circuit on the semiconductor substrate; b) Process to form cap and side-wall isolation film coating on the top and side surface of the circuit by Si3N4; c) Process to form isolation film with flat top surface on the substrate by the material with higher etching speed than Si3N4, coating the cap and side-wall isolation film; d) Process to form photo mask on the top of the isolation film by depositing the material with lower etching speed than this film, and with the window of the mask to form the via forming area; e) Process to remove the isolation film within the window of the mask, and by the cap and side-wall isolation film to form the via.
Patent TW-274632-B (TW)
Title: A method to avoid the resistance of complex-crystalline silicon variable on fabricating
Inventor: SHYU JENN-TSONG
IPC: H01L21/3205
Filed: 1995-10-03
Granted: 1996-04-21
Abstract: A method to avoid the resistance of complex-crystalline silicon variable on fabricating, by which a complex-crystalline silicon of high resistance having load region and conductive region is being applied to avoid the resistance being effected on succeeding procedures, which comprising the steps of: forming a insulating layer over the complex-crystalline of highresistance; and forming a metal layer over the insulating layer to completely mask the load region of the complex-crystalline of high resistance covered beneath the insulating layer.
Patent TW-365036-B (TW)
Title: Light exposure mask for semiconductor devices
Inventor: MOON SEUNG-CHAN
IPC: G03F7/20
Filed: 1995-12-09
Granted: 1999-07-21
Abstract: A light exposure mask for a semiconductor device having different line/space pattern widths at different mask portions in such a manner that its repeated patterns disposed at the central mask portion corresponding to the memory region of the semiconductor device have a minimum line/space width whereas those disposed at the peripheral mask portion have a line/space width larger than the minimum width, such that its non-uniform patterns disposed at the peripheral mask portion have a space width larger than the minimum width, and such that its independent pattern has a line width larger than the minimum width. With such line/space pattern widths, the light exposure mask is capable of preventing a short circuit caused by the residue of a photoresist film material after a light exposure according to the modified illumination method or caused by an excessive light exposure, forming a precise micro pattern, increasing the process redundancy, and thereby achieving an improvement in process yield and operation reliance.
Patent TW-344021-B (TW)
Title: A method and an apparatus for injecting a vaporizable material into a molten bath
Inventor: RICK M RAUENZAHN
IPC: B01D53/34
Filed: 1996-06-04
Granted: 1998-11-01
Abstract: A method for injecting a vaporizable material into a molten bath having a temperature which is significantly higher than the nucleation, combustion or decomposition temperature of the vaporizable material, comprising the steps of: a) injecting a gas into the molten bath at a rate which is sufficient to cause the gas and the molten bath to form a gaseous dispersion, the gas component of the gaseous dispersion occupying a sufficient fraction of the dispersion to cause a significant portion of the vaporizable material, at a rate at which the vaporizable material is injected into the molten bath, to volatilize, combust or decompose during exposure to the gas component, and thereby ensure that the molten bath will not explode; and b) injecting the vaporizable material into the gaseous dispersion at a rate which causes a significant portion of the vaporizable material to volatilize, combust or decompose during exposure of the material to the gas component of the gaseous dispersion, thereby ensuring that the molten bath will not explode.
Patent TW-314617-B (TW)
IPC: G07C3/00
Filed: 1996-06-04
Granted: 1997-09-01
Abstract: A permanently read- and write-enabled but not easily erasable chip card (C) accompanies a product from manufacturing through recycling. The basic product data are supplemented using read-write devices (SL1 through SL8).
Patent TW-309458-B (TW)
Title: The punching-forming method for stage-type hollow square pipe with flange hole
Inventor: TSAY TIAN-JYI
IPC: B21D28/00
Filed: 1996-06-21
Granted: 1997-07-01
Abstract: A punching-forming method for stage-type hollow square pipe with flange hole, its main processes include: * Punch hole: Punch through hole on material stick at suited interval;* Punch flange hole: Punch each through hole circumference to form flange, and form flange hole; * Enlarge hole: Enlarge the flange hole dia.; * Edge-shear: Shear a groove on both sides of stick when stick is forward proceeding at a certain distance, and reserve a neck at central of stick;* Concave trace-press: Press four parallel concave traces on stick for decided the bending surface of bottom wall, 2 side walls and 2 top walls;* Stage-fold: Fold stick inward along the four concave traces, and increase the folding angle stage by stage, and fold 2 side walls & 2 top walls upward vertical with bottom wall, then fold 2 top walls inward vertical with 2 side walls to form hollow square pipe; * Shear: Punch-shearing the hollow square pipe.
Patent TW-377389-B (TW)
Title: High-load hydraulic (pneumatic) cylinder structure
Inventor: WANG CHIU-NAN
IPC: F16J9/00
Filed: 1996-11-04
Granted: 1999-12-21
Abstract: The present invention relates to a high-load fluid (gas) cylinder structure having the body of the fluid (gas) cylinder structure an action rod with the receiving end disposed at a proper section of the action rod driven by the reciprocal flow of the fluid (gas) in the cylinder, making the action rod make telescopic movement for the creation of driving force, having on both sides of the receiving end more than 1 bearing, and a leakage-proof ring disposed between the bearing and the receiving end, creating a gap between the bearing and the receiving end by means of the leakage-proof ring, having the bearing on the action rod a ring latch for positioning and at least one bearing at the exit of the cylinder body, plus a leakage-proof ring between the bearing and the outlet cap, so that the fluid (gas) inside the cylinder would drive the action rod in telescopic movement, creating pushing pressure onto the bearing, which would have the pressure be reacted onto the leakage-proof ring, so that the leakage-proof ring would, when pressed by the receiving end and the bearing, respond to the inner wall of the cylinder by pushing it, thus increasing the high-load of the action rod toward outside.
Patent TW-360884-B (TW)
Title: Articles comprising magnetically soft thin films and methods for making such articles
Inventor: CHEN LI-HAN
IPC: G11B5/187
Filed: 1997-01-21
Granted: 1999-06-11
Abstract: The invention is embodied in a soft magnetic thin film article comprising an iron-chromium-nitrogen (Fe-Cr-N) based alloy and methods for making such article. The soft magnetic thin film article is formed using an iron-chromium-nitrogen based alloy with tantalum in one embodiment and with at least one of the elements titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), molybdenum (Mo), niobium (Nb) or tungsten (W) in another embodiment. The article is formed such that the alloy has a relatively high saturation magnetization (e.g., greater than approximately 15 Kg) and a relatively low coercivity (e.g., less than approximately 2.0 oersteds) in an as-deposited condition or, alternatively, with a very low temperature treatment (e.g., below approximately 150 DEG C). The inventive films are suitable for use in electromagnetic devices, for example, in microtransformer cores, inductor cores and in magnetic read-write heads.
Patent TW-517093-B (TW)
Title: Method and apparatus for recovering zinc oxide
Inventor: ISOZAKI SHINICHI
IPC: C22B7/02
Filed: 1997-04-01
Granted: 2003-01-11
Abstract: A method for recovering zinc oxide comprises the steps of: agglomerating a dust; charging the agglomerate to a molten iron in a melting furnace; collecting a dust generated from the melting furnace; recycling a part of the collected dust and recovering another part of the collected dust. An apparatus for recovering zinc oxide comprises: an agglomeration unit for agglomerating a dust containing iron oxide and zinc oxide; a melting furnace for accepting the agglomerate and for holding the molten iron for reducing the dust; and at least two units of dust collector for collecting the dust containing zinc oxide generated from the melting furnace.
Patent TW-335382-B (TW)
Title: Industrial container pallet
Inventor: HUBERT H DECKER
IPC: B65D25/24
Filed: 1997-06-03
Granted: 1998-07-01
Abstract: Two compact rigid pre-formed plastic cores are permanently sealed together to form a pallet which can hold heavy loads provided with interior foaming, is impact resistant and fits all common handling equipment. Stacking the pallets at the platform height by inserting the open leg support of the pallet provides a space-saving feature. A pallet basket of four loose sides, to be assembled at the time of use, fitted to the pallet and locked on for safety and a basket bottom/top, completes a packing process system which is environmentally friendly, is reusable for many industries and economical for loose return shipments.
Patent TW-390105-B (TW)
Title: Electrification heating and fusing device of deflection coil
Inventor: SARUTA KEN
IPC: H05B3/00
Filed: 1997-06-12
Granted: 2000-05-11
Abstract: The present invention relates to  perform the fusion of a metal piece to lead parts on both ends of a deflection coil and the electrification heating for the formation and fixation of the deflection coil. Moreover, the voltage, current and power which are applied to the deflection coil can be controlled with a large range and high resolution. It also can keep the reliability of the electrification heating and fusion device of the deflection coil. The present invention comprises  a rectifier 2 for rectifying an external alternating current to a direct current; an inverter circuit 4 for converting the direct current to a pulse wave current having a prescribed duty ratio; a switch circuit 27 such that a switch 25 and a switch 26 can selective switch in ON or OFF, a high-frequency isolation transform 9 is voltage-boosting and applying to an electric heating circuit 13, or an isolation transform 10 is down-converting and applying to a fusing circuit 14.
Patent TW-476773-B (TW)
Title: Polyamide resin composition, and fibers, films and molded articles using the same
Inventor: YOSHIDA MIHO
IPC: C08K3/22
Filed: 1997-09-02
Granted: 2002-02-21
Abstract: A polyamide resin composition comprising a polyamide and an alkaline earth metal compound, wherein the amount of a cyclic monomer formed by melting said composition under the conditions of a moisture content of 0.02% by weight or less, at 0.01 Torr or below, at 250 DEG C, and for 8 hours is not more than 0.7 parts by weight per 100 parts by weight of the polyamide; and fibers, films and molded articles with the use of the same.
Patent TW-339463-B (TW)
Title: The producing method for MOST of LDD with source/drain
Inventor: JANG YEOU-JYH
IPC: H01L21/336
Filed: 1997-09-23
Granted: 1998-09-01
Abstract: A producing method for MOST, it includes following steps: Provide a semiconductor substrate with field oxide; Form 1st oxide on semiconductor substrate; Serially form 1st conductive and 2nd insulating layer on 1st oxide layer; Define 1st conductive and 2nd insulating layer to form transistor stack gate; Form spacer on sidewall of transistor stacked gate; Use stacked gate and spacer as mask, to implant 1st doped on substrate to form 1st doped area; Etch spacer to form sidewall; Use stacked gate and sidewall as mask, to implant 2nd doped on substrate to form 2nd doped area, in which, the depth of 2nd doped area is shallower than 1st doped area.
Patent TW-454010-B (TW)
Title: Unsaturated organometallic compounds derived from titanium and process for their preparation
Inventor: RIONDEL ALAIN
IPC: C07C57/04
Filed: 1997-10-04
Granted: 2001-09-11
Abstract: These compounds are denoted by the formula (I), in which R denotes a tert-butyl, tert-amyl or 2-ethyl-hexyl radical. To prepare them, methacrylic acid is reacted with a tetraalkoxytitanium Ti(OR)4, where R = isopropyl or tert-butyl, to obtain a corresponding compound (I), or with Ti(OR)(OtAm)3, where R = isopropyl or tert-butyl and tAm = tert-amyl, to obtain a compound (I) with R = tert-amyl, the compounds (I) with R = isopropyl or tert-butyl furthermore denoting intermediate synthesis products which can be reacted with tert-amyl alcohol or with 2-ethylhexanol, to obtain a compound (I) in which R denotes tert-amyl or 2-ethylhexyl respectively.
Patent TW-523506-B (TW)
Title: Sulfonamide or carbamide derivatives and drugs containing the same as active ingredients
Inventor: OHUCHIDA SHUICHI
IPC: C07C311/29
Filed: 1997-12-10
Granted: 2003-03-11
Abstract: The present invention relates to a compound of formula (I) and a salt thereof: (wherein rings A and B represent a carbocyclic or heterocyclic ring; Z1 represents -COR1, -CH=CH-COR1 etc.; Z2 represents a hydrogen atom, an alkyl group etc.; Z3 represents a bond or an alkylene group; Z4 represents SO2, CO; Z5 represents an alkyl group, a phenyl group or heterocyclic ring; R2 represents CONR8, O, S, NZ6, Z7-alkylene, or alkylene group etc.; R3 represents a hydrogen atom, an alkyl group, a halogen, CF3 etc.; R4 represents a hydrogen atom or substituted alkyl group etc.; n and t each represent an integer of 1-4). The compound of formula (I) is capable of binding with PGE2 receptor and thus exhibit antagonistic or agonistic effects. The compound (I) is useful as a drug for inhibiting retraction of uterus, analgesia, inhibiting the motion of digestive tract, inducing sleep, increasing a volume of the bladder, and useful as a drug for restracting uterus, promoting the motion of digestic tract, inhibiting secretion of gastric juice, hypotension and diruesis.
Patent TW-467890-B (TW)
Title: Process for preparing aldehydes in the presence of an aqueous phase comprising rhodium and sulfonated triarylphosphines as catalyst
Inventor: BOGDANOVIC SANDRA
IPC: C01G55/00
Filed: 1998-01-09
Granted: 2001-12-11
Abstract: The present invention relates to a process for preparing aldehydes by reacting an olefinically unsaturated compound having from 6 to 16 carbon atoms with hydrogen and carbon monoxide at from 20 to 170 DEG C and from 1 to 300 bar in the presence of an aqueous phase comprising rhodium and sulfonated triarylphosphines as catalyst and from 10 to 70% by weight of a compound of the formula (1) R(OCH2CH2)nOR1, where R is hydrogen, a straight-chain or branched alkyl radical having from 1 to 4 carbon atoms or a hydroxyalkyl radical having from 1 to 4 carbon atoms, R1 is hydrogen or a methyl radical and n is an integer from 3 to 50.