Patent SG-11201906133P-A (SG)
Title: Gallium nitride expitaxial structures for power devices
Inventor: ODNOBLYUDOV VLADIMIR
IPC: C30B29/40
Filed: 2018-01-10
Abstract: Title: GALLIUM NITRIDE EXPITAXIAL STRUCTURES FOR POWER DEVICES .1 09p:ea. AlGaN or InAIN 16 1 / 6 —j ' 6 %.:///; 4/ ././ .frter /0/0A Undeped GaN Buffer : Si 120 Conducting Channel (2DEG) 1Q structure (102) FIG. (12) INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property Organization International Bureau (43) International Publication Date 26 July 2018 (26.07.2018) WIP0 I PCT ill IIIIIl °mons °nolo VIII imio oimIE (10) International Publication Number WO 2018/136278 Al (51) International Patent Classification: C30B 2 9 / 4 0 (2006.01) C30B 29/68 (2006.01) (21) International Application Number: PCT/US2018/013206 (22) International Filing Date: 10 January 2018 (10.01.2018) (25) Filing Language: English (26) Publication Language: English (30) Priority Data: 62/447,857 18 January 2017 (18.01.2017) US 62/591,016 27 November 2017 (27.11.2017) US 15/864,977 08 January 2018 (08.01.2018) US (71) Applicant: QROMIS, INC. [US/US]; 2306 Walsh Av- enue, Santa Clara, California 95051 (US). (72) Inventors: ODNOBLYUDOV, Vladimir; c/o Qromis, Inc., 2306 Walsh Avenue, Santa Clara, California 95032 (US). LESTER, Steve; c/o Qromis, Inc., 2306 Walsh Av- enue, Santa Clara, California 95051 (US). AKTAS, Ozgur; c/o Qromis, Inc., 2306 Walsh Avenue, Santa Clara, Califor- nia 95051 (US). (74) Agent: LIU, Rong et al.; Kilpatrick Townsend & Stock- ton LLP, Mailstop: IP Docketing-22, 1100 Peachtree Street, Suite 2800, Atlanta, Georgia 30309 (US). (81) Designated States (unless otherwise indicated, for every kind of national protection available): AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (84) Designated States (unless otherwise indicated, for every kind of regional protection available): ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, GaN Epi (140) 1-1 Engineered substrate N (57) : A method for making a multilayered device on an engineered substrate having a substrate coefficient of thermal ex- pansion includes growing a buffer layer on the engineered substrate, and growing a first epitaxial layer on the buffer layer. The first O epitaxial layer is characterized by an epitaxial coefficient of thermal expansion substantially equal to the substrate coefficient of thermal \" expansion. [Continued on next page] C WO 2018/136278 Al MIDEDIMOHNIMMUMMOMMIIMEDIMMIONEVOIS EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG). Published: — with international search report (Art. 21(3))