baber/WOPTO huggingface dataset:
Patent JP-H1171994-A (JP)
Title: Segment and form for manufacturing segment
Inventor: HASHIMOTO HIROHIDE
IPC: B28B7/16
Filed: 1997-08-27
Abstract: PROBLEM TO BE SOLVED: To manufacture a segment with a groove section for installation for mounting a sealing material without generating cracks, breaking, etc. SOLUTION: Groove sections 4 for installation are formed to joining end faces 2 mutually connected in segments 1 along the longitudinal direction. Sealing materials are set up onto the bases 4a of the groove sections 4 for installation. Upper and lower angle sections and upper and lower corner sections constituting the groove sections for installation are formed in a curved cross section. Projections shaping the groove sections 4 for installation are formed to the molding surfaces 6 of form plates 5 molding the joining end faces 2. The upper and lower angle sections 23a, 23b and upper and lower corner sections 24a, 24b of the projections are formed in the curved cross section.
Patent JP-S61109315-A (JP)
Title: Mis type semiconductor integrated circuit
Inventor: KOINUMA HIROYUKI
IPC: H03K3/011
Filed: 1984-11-02
Abstract: PURPOSE:To decrease the dependance of a circuit threshold voltage on a power supply voltage by inserting an insulation gate type FET whose conduction is set at a constant voltage to a Schmitt trigger circuit and using the FET to apply conduction control. CONSTITUTION:An FETQ7 acts like a pentode when the level of an input signal phiIN changes from L to H, and the potential at a node N2 is always constant even if a power supply voltage VDD is fluctuated. Since the gate potential of the FETQ5 is constant independently of the power supply voltage, the circuit threshold voltage VON of the input signal phiIN when the FETQ3 is turned on is also immune to the effect of the power supply voltage. When the signal phiIN decreases from the H level, the continuity resistance of an FETQ7 is in creased, the potential of a node N1 rises and the FETQ3 is in off-state, then the level of an output signal phiOUT goes to an H level. The voltage of the signal phiIN is the circuit threshold voltage VOFF in this case and this voltage is indepen dent of the power supply voltage VDD.
Patent JP-H0280104-A (JP)
Title: Method for rolling by cold rolling mill provided with washing line
Inventor: TANIGUCHI ISAO
IPC: B21B1/22
Filed: 1988-09-16
Abstract: PURPOSE:To always obtain a strip with max. cleanliness by adjusting one or more of the flow rate, concentration, and temp. of a rolling lubricant and a coolant to keep a rolling finish temp. of a rolled stock at a prescribed temp. CONSTITUTION:A temp. of a steel strip is measured by a thermometer 1 in the outlet side of the final stand of a rolling mill 19. When a difference between a measured temp. and a target temp. is generated, an arithmetic unit 2 outputs an opening command to a rolling oil control valve 4, coolant control valve 6, and steam control valve 9 and a rotation command to an agitator 7. A coolant flow rate is controlled by the coolant control valve 6. A coolant concentration is controlled by the lubricant flow rate control valve 4 and the number of rotations of the agitator 7. A coolant temp. is controlled by the steam control valve 9. At the time of setting of target temp. by an operator, a strip temp. is automatically kept at a temp. in the optimum temp. range because steel strip temps. and the coolant system are interlocked with a closed loop control circuit. Hence, A strip with max. cleanliness is obtained independent of strip conditions and troubles in the mill 19.
Patent JP-H0394350-A (JP)
Title: Semiconductor storage device
Inventor: TAKAHASHI YUTAKA
IPC: G01R31/3185
Filed: 1989-09-07
Abstract: PURPOSE:To prevent the contents stored in the semiconductor storage device from being destructed at the time of a scan pass diagnostic mode by inhibiting a write control pulse forming circuit from generating a write control pulse when a scan pass diagnostic mode control signal is activated. CONSTITUTION:When the scan pass diagnostic mode control signal, the inverse of SE, is in the high level, normal operation, i.e. read/write operation corresponding to the high/low level of a write control signal, the inverse of WE, is executed. When the control signal, the inverse of SE, is the low level, i.e. the scan pass diagnostic mode, a write control pulse WP is not generated from a write control pulse forming circuit (WPG) independently of the high/low level of the write control signal, the inverse of SE. Thereby, the stored contents of the memory array can be prevented from being destructed at the time of scan pass diagnostic.
Patent JP-H1174830-A (JP)
Title: Dynamic management system for mobile station
Inventor: FURUKAWA YUKITOSHI
IPC: H04B7/26
Filed: 1997-08-28
Abstract: PROBLEM TO BE SOLVED: To attain the dynamic management of a mobile station with an inexpensive system constitution by connecting a personal computer with a specific telephone set or the transmission and reception voice line of a mobile station, and operating data transmission and reception in a voice band between the personal computer and the mobile station. SOLUTION: A controller 11 connected with a telephone set 8 automatically responds instead of the telephone set 8, and transmits this response with dial tone data to a calling mobile station 5, The mobile station 5 analyzes the data, and transmits which control station is managing the base station in which its own station is registered, or what state the present mobile station is turned into with dial tone data. The controller 11 analyzes the data, and transmits reception completion data when the data are normally received, and moves to an on-hook operation. At the same time, the mobile station 5 moves to the on-hook operation at the time of completing the dial tone data reception. Moreover, the controller 11 displays which control station is managing the base station in which the mobile station is registered at present, and what state the mobile station is turned into on a screen.
Patent JP-2000068484-A (JP)
Title: Nonvolatile semiconductor memory device and, manufacture thereof, and microcomputer incorporating nonvolatile semiconductor memory device and manufacture thereof
Inventor: IO EIJI
IPC: H01L21/8247
Filed: 1998-08-19
Abstract: PROBLEM TO BE SOLVED: To simplify manufacturing process and improve integration by making a gate electrode of a memory transistor and the gate electrode of a selection transistor by waking them into same structure and by patterning the gate electrodes. SOLUTION: A field oxide film 146 is formed on a semiconductor substrate 102, and after a tunnel oxide film 120 is formed on a part which is not covered by the field oxide film 146, a first polysilicon layer 164 is formed over the entire surface. Thereafter, photoresist is applied to the entrie surface to form a predetermined photoresist pattern. The photoresist comprises a part 168-L which covers an entire face of a logic region, a part 168-S which covers a portion to be a gate electrode of a selection transistor among a memory cell region, and a part 168-M which covers a portion to be a gate electrode of a memory transistor from among the memory cell regions.
Patent JP-2000068417-A (JP)
Title: Semiconductor device
Inventor: NIWA KATSUHIRO
IPC: C08L63/00
Filed: 1998-08-19
Abstract: PROBLEM TO BE SOLVED: To improve solder heat resistance, heat shock resistance, moisture resistance reliability, etc., by covering a semiconductor element with an epoxy resin compsn., contg. an compd. shown by a specified formula, a part of or the entire top face of the element having been covered with a polyimide obtd. by dehydrating a polyimide precursor having structural units shown by a specified formula. SOLUTION: A part of or the entire top face of a semiconductor element is covered with a polyimide obtd. by dehydrating a polyimide precursor having structural units as a main component, represented by Formula I (R1 is a trivalent or tetravalent org. group having two C atoms, R2 is a bivalent org. group having two C atoms, R3 is a monovalent org. group having at least one double bond and n is 1 or 2). The semiconductor element is further covered with an epoxy resin compsn. contg. an epoxy resin which contains a compd. shown by Formula II (R4-R11 are H atoms, monovalent org. groups or halogen atoms), phenol-based hardening agent, hardening accelerator, inorg. filler, etc.
Patent JP-2001055229-A (JP)
Title: Self-supportable/openable and foldable box shape container
Inventor: OHASHI NORIO
IPC: B65D6/18
Filed: 1999-08-19
Abstract: PROBLEM TO BE SOLVED: To obtain a container in which various items can be put, which is foldable when empty, and which can be made into a box shape in use. SOLUTION: This box shape container comprises a special flat face member (a) and a sheet body 1. In this case, special rotating flat, face members C, D whose another end part is mounted rotable are provided on both side faces for securing enough strength as a box. Also a top cover G where a cushioning material 4 is attached easily closes the opening of the container.
Patent JP-S61112787-A (JP)
Title: Pumping system for ready-mixed concrete
Inventor: MAEDA JITSUO
IPC: F04B43/12
Filed: 1984-11-02
Abstract: PURPOSE:To extend the life-time of a pumping tube by giving a sufficient play to the pumping tube at its one edge so that when the tube is damaged at a location nearby the other edge, the position of the pumping tube is shifted to the side of the other edge and the tube can be reused. CONSTITUTION:The one edge of a pumping tube 2C on the side of a transfer hose 4 is held by an impulsive means 5 of which the mounting position is adjustable far and near. While, the other edge of the pumping tube 2C is connected to a hopper 3 of which the mounting position is also adjustable far and near. This pumping tube 2C is made up in such a manner that on the side of the transfer hose 4, a play having the length more than the dimension adjustable by the hopper 3 is given to the pumping tube 2C. And, when the pumping tube 2C is damaged at a part X nearby the other edge, the pumping tube 2C is shifted to the side of the hopper 3 so that it can be reused.
Patent JP-H04114730-A (JP)
Title: Preparation of encapsulated emulsion
Inventor: YAMAZAKI SHINSUKE
IPC: C09K23/00
Filed: 1990-09-03
Abstract: PURPOSE:To enhance the stability of an emulsion by emulsifying an oily substance by a reactive surfactant having polymerization properties and subsequently polymerizing the surfactant locally adsorbed on the interface parts of emulsion liquid droplets to coat the interface parts with an ultra-thin polymer film. CONSTITUTION:As a reactive surfactant, one having one or more of a vinyl group and a methacrylic group and forming a high molecular ultra-thin film by polymerization and insoluble in water or oil after the completion of polymerization is used. Especially, a difunctional surfactant capable of forming a crosslinkable film is pref. At first, oil to be emulsified is mixed with the surfactant to be uniformly emulsified by a high speed mixer. Next, a polymerization initiator such as potassium persulfate is added to the emulsion to be mixed therewith in a nitrogen gas stream to perform polymerization. As the polymerization initiator, an oil-soluble one such as benzoyl peroxide can be also used. The polymerization due to ultraviolet rays is also effective. By this method, the stability of an emulsion is enhanced.
Patent JP-H0896643-A (JP)
Title: Electric contact point material
Inventor: INADA ISATO
IPC: H01H1/0233
Filed: 1994-09-28
Abstract: PURPOSE: To provide an Ag-Ni type electric contact point material which is excellent in welding resistance and consumption resistance being important contact point performance. CONSTITUTION: In an electric contact point material by dispersing an Ni particle and an NiO particle in an Ag base, the content of Ni and NiO in the electric contact point material is 5 to 25wt.% in Ni quantity conversion, and the content of NiO is 0.05 to 1wt.% in conversion of an oxygen quantity constituting NiO. At least a single kind of metallic particle selected from a group composed of V, Mn, Cr, Ta, Ti, Co and WC is contained by 0.05 to 3wt.% in the electric contact point material.
Patent JP-2000068545-A (JP)
Title: Photovoltaic power generator
Inventor: YAMAGUCHI HIROMI
IPC: H01L31/042
Filed: 1998-08-19
Abstract: PROBLEM TO BE SOLVED: To provide a photovoltaic power generator capable of generating electricity by a ceramic porous body and a photoelectric conversion element. SOLUTION: A photovoltaic power generator is composed of a a light emitting block 11 forming a light emitting surface 2 by impregnating the surface of a ceramics porous body 1 in a specific thickness with a thermal light emitting material, while feeding a preblended fuel from the backside for flaming 3 inside the near surface of the ceramics porous body 1 to emit light 4 by heating the light emitting surface 2; and a photoelectric conversion element 5 arranged opposing to the light emitting surface 2 for generating electricity by the emitted light 4 from the light emitting surface 2.
Patent JP-S59125111-A (JP)
Title: Nonlinear converting circuit
Inventor: NAKAZAWA TETSUJI
IPC: H03G11/08
Filed: 1982-12-30
Abstract: PURPOSE:To obtain a nonlinear circuit in which action starting voltage is reduced by selecting the emitter area ratio and the emitter resistance value of a transistor which performs a current mirror operation. CONSTITUTION:Transistors TR41 and 42 perform current mirror operations with 1:n emitter area ratio and m:1 proportion secured between emitter resistances R1 and R2. When no input exists, a current is supplied to a resistance R3 from a current source 39. In this case, the TR41 and 42 are kept off. Then I2=nI1 and mI1 are obtained when the input is small and large respectively. In addition, I2=nI1exp(mI1R2/VT) is obtained when the input has the medium value. Therefore a TR47 is set at the action starting voltage and delivers an output IOUT when the input voltage is set at 1/n. This means that the action starting voltage is reduced down to 1/n. Thus this nonlinear converting circuit is available with voltage of a low level.
Patent JP-S60126115-A (JP)
Inventor: SAKIDA TSUTOMU
IPC: A47B77/10
Filed: 1983-12-09
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。
Patent JP-S59119719-A (JP)
Title: Manufacture of semiconductor device
Inventor: TANAHASHI TOSHIYUKI
IPC: H01L21/208
Filed: 1982-12-24
Abstract: PURPOSE:To obtain an excellent Al1-xInxAs layer of not less than 0.1mum thickness by previously designing thickness on an InP group semiconductor substrate or a melting liquid for growth constituting an AlInAs layer to a specific value or more when the melting liquid is brought into contact with the upper section of the substrate and the AlInAs layer is grown. CONSTITUTION:An N<+> type InP clad layer 12, an InGaAsP active layer 13, a P type AlInAs clad layer 14, a P type InP clad layer 15, a P type InGaAs contact layer 16 and an N type InP cap layer 17 are laminated on the N<+> type InP substrate 11 and liquid-phase epitaxial grown, and a window is bored to the layer 17 and a P-side electrode 18 being in contact with the layer 16 is attached and an N-side electrode 19 on the back of the substrate 11 respectively, thus manufacturing the semiconductor laser device. In the constitution, the thickness of a melt for growth is brought to 1mm. or more and a growth starting temperature is selected to approximately 750 deg.C and cooling velocity to approximately 0.3 deg.C/min when the P type AlInAs clad layer 14 functioning as confining carriers is grown. Accordingly, thickness of 0.1mm. or more required for confining carriers is obtained positively.
Patent JP-H0281488-A (JP)
Title: Laminated piezoelectric-body type actuator
Inventor: MORI HOMARE
IPC: H01L41/083
Filed: 1988-09-16
Abstract: PURPOSE:To reduce a displacement of a reference position of a to-be-shifted member by a thermal expansion of a laminated piezoelectric body by a method wherein the to-be-shifted member which is shifted by an expansion or contraction operation of two or more laminated piezoelectric bodies inside a case member is arranged and installed so as to be sandwiched between the laminated piezoelectric bodies. CONSTITUTION:Two laminated piezoelectric bodies 15a, 15b are arranged so as to be expanded or contracted in such a way that a flapper 14 is sandwiched inside a piezoelectric-body case 12. Even when the laminated piezoelectric bodies 15a, 15b are expanded or contracted by a change in an ambient temperature or by generated heat, both are expanded or contracted by an identical amount; this amount is absorbed by dish springs 17a, 17b; the flapper 14 is not shifted. Accordingly, a displacement of a reference position of the flapper 14 is reduced; a stable servomechanism can be constituted. When a prescribed positive or negative voltage is applied to the laminated piezoelectric body 15a or 15b, this body is expanded or contracted and shifts the flapper 14.
Patent JP-H0869805-A (JP)
Title: Rebalanced lithium/vanadium oxide silver battery and fine movement removal equipment of heart using this
Inventor: AN EMU KURESUPI
IPC: H01M10/05
Filed: 1995-08-21
Abstract: PROBLEM TO BE SOLVED: To easily predict a discharging life, avoiding resistance accumulation, by rebalancing a battery to make discharging at a gradient section between a fist voltage stability period and a second voltage stability period. SOLUTION: A lithium negative electrode is inserted in a section where a positive pole wound body is wound inside a battery casing. The casing includes an organic electrolysis consisting of a non-water-soluble solution comprising a combination of lithium salt and organic solvent to contact the negative electrode and a positive electrode. A break voltage of this Li/SVO battery has two voltage stability periods having gradient sections 315, 320. A first stability voltage period 300 is 3.2 V, and a second voltage stability period 310 is 2.6 V. This battery is to be a balancing type having sufficient lithium and electrolysis to perform positive electrode discharging. By rebalancing the battery and using less lithium and electrolysis, usable capacity for a positive electrode material increases by a section 325 projecting from a flat area 300.
Patent JP-S59123116-A (JP)
Inventor: TANAKA KOUTAROU
IPC: H01H9/54
Filed: 1982-12-28
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。
Patent JP-S63241359-A (JP)
Title: Micromodule solid phase method of reagent
Inventor: GOTO YUTAKA
IPC: G01N35/02
Filed: 1986-10-01
Abstract: PURPOSE:To eliminate labor work, by performing a distribution and discharge of a reagent, a solution for protection films and a washing liquid with distribution and discharge nozzles corresponding to arrays of wells of a module plate while incubation is conducted during the transport of the plate. CONSTITUTION:A specified amount of reagent 11 is distributed into wells 2 of a module plate from injection nozzles 12 corresponding to the number of arrays of the wells 2. Then, the plate is conveyed in a specified temperature atmosphere and the residual reagent is discharged with a discharge nozzle 14. Thereafter, a washing liquid is distributed from a washing nozzle 15 and discharged from a discharge nozzle 14. Moreover, a solution for protection films is distributed into the wells to be conveyed in a required temperature atmosphere and the residual liquid is discharged. Then, after the distribution and discharge of the washing liquid, the wells are dried in the required temperature atmosphere. Thus, the manufacture of a diagnosis kit such as AIDS can be carried out safely.
Patent JP-H1174053-A (JP)
Title: Storage case for containing modular cable and trunk jack, and trunk jack
Inventor: ADACHI SHIZUO
IPC: H01R31/06
Filed: 1997-08-29
Abstract: PROBLEM TO BE SOLVED: To enclose a trunk jack and a modular cable together, by winding and containing a modular cable in the body, and providing a space enclosing a trunk jack which connects and relays the modular cables together or a communications line with the modular cable. SOLUTION: An axis 2 is integrally provided in the center inside the side wall in a modular cable storage room 1d, and a trunk jack storage room 1e containing a trunk jack is formed at an end part. Also, a disk-shape reel mounting 3 for winding a modular cable 5 is put in the modular cable storage room 1d. This reel mounting 3 is rotatably supported by the axis 2 through the center hole, while a drum 3b for winding the modular cable 5 is integrally provided around the periphery of the center hole. Thus, the modular cable 5 and the trunk jack can be contained together, and there is no need to carry them separately.
Patent JP-S6475494-A (JP)
Title: Production of n-acyl, o,s-dimethylphosphoroamidethioate
Inventor: TANI MICHIO
IPC: C07F9/24
Filed: 1987-09-17
Abstract: PURPOSE:To obtain the titled compound advantageously on an industrial scale in acylation attained in high yield as well as in facilitated separation of catalyst, by reacting O,S-dimethylphosphorothioate with an acid anhydride using dimethyl sulfate as a catalyst. CONSTITUTION:O,S-dimethylphosphoroamidethioate expressed by formula I is reacted with an acid anhydride expressed by formula II (R is lower alkyl) using dimethyl sulfate expressed by the formula (CH3)2SO4, normally at 0-100 deg.C for 30min-several hr to provide the aimed compound expressed by formula III. Further more, when O,O-dimethylphosphoroamidethioate is reacted with dimethyl sulfate to afford a compound expressed by formula I, an acid anhydride expressed by formula II is added to the above-mentioned reaction liquid without liberating the compound expressed by formula I and acylation is carried out.
Patent JP-S6390373-A (JP)
Title: Lamination type damping steel plate for stop welding and its stop welding and joining method
Inventor: TSUNEKAWA HIROSHI
IPC: B23K11/11
Filed: 1986-10-01
Abstract: PURPOSE:To improve the flatness of the steel plate surface corresponding to the visible surface to be used after the spot welding by giving the difference in the yield strength and/or the plate thickness between upper and lower steel plates with thermoplastic resin between. CONSTITUTION:The damping steel plate 1 is formed to the structure where a thermoplastic resin layer 4 is inserted between the visible surface side steel plate 2 and the invisible surface side steel plate 3 with the different plate thickness and/or yield strength in order to give the damping property. In that case, one of the plate thickness and the yield strength at least of the visible surface side steel plate 2 is made larger than that of the invisible surface side steel plate 3. Accordingly, the strain resistance of the visible surface side steel plate 2 with respect to the pressuring force of an electrode of the spot welding is improved relatively and the invisible surface side steel plate 3 can be strained preferentially. As a result, the visible surface side steel plate 2 can not be strained by straining the invisible surface plate 3 and the flatness of the visible surface side steel plate 2 can be maintained.