baber/WOPTO huggingface dataset:
Patent TW-380310-B (TW)
Title: Temperature measurement with interleaved bi-level current on a diode and bi-level current source therefor
Inventor: LOCASCIO JAMES JASON
IPC: G01K7/01
Filed: 1998-05-22
Granted: 2000-01-21
Abstract: Temperature measurement with interleaved bi-level current on a diode and bi-level current source therefor which provides a very accurate ratio of measurement currents through the diode without calibration and despite process and temperature variations. The bi-level current source uses a plurality N of individual current sources wherein the higher current is comprised of the sum of the N individual current sources and the lower current is comprised of one of the individual current sources, with a temperature measurement being made using N higher current/lower current measuring sequences and using a different one of the N individual current sources for each sequence. Proper selection of the value of N and proper ordering of the tow currents in each of the N measuring sequence when the diode temperature is increasing or decreasing will provide an output temperature representing the temperature of the diode at the beginning of the N measurement sequences, at the end of the N measurement sequences, or half way between. Alternate methods of achieving the results of the invention are disclosed.
Patent TW-519551-B (TW)
Title: Methods of fabricating nitride crystals and nitride crystals obtained therefrom
Inventor: SHIBATA MASATOMO
IPC: C30B15/00
Filed: 1998-06-03
Granted: 2003-02-01
Abstract: A group III metal element is heated so as to melt, a gas NH3 containing nitrogen atoms is injected into a melt 3 of the group III metal element at a temperature lower than the melting point of a nitride to be obtained, thereby producing a nitride microcrystal of the group III element having high wettability with the melt 3 in the melt 3 of the group III metal element. A mixture of the group III nitride microcrystal obtained as mentioned above and the group III metal element solution is used as a starting material of a liquid phase growth or group III nitride powders obtained by removing the group III metal material from the mixture are used as a starting material of a vapor phase growth. Further, a seed crystal or a substrate crystal is immersed in a melt of a group III element such as gallium, bubbles of a gas containing nitrogen such as ammonia are intermittently come into contact with the surface of the crystal, and the group III element and the gas containing nitrogen are allowed to react with each other on the surface of the seed crystal or the substrate crystal, thereby allowing the nitride crystal of the group III element to be grown on the surface of the seed crystal or substrate crystal.
Patent TW-370711-B (TW)
Title: Method for manufacturing damascene interconnect structure
Inventor: LIU CHUNG-SHI
IPC: H01L21/768
Filed: 1998-06-26
Granted: 1999-09-21
Abstract: The present invention provides an improved manufacturing process of connection in a semiconductor, which utilizes an appropriate ion implanting process to increase etching speed of a high dielectric material so as to raise the etching selectivity of the material and an etching stop layer. Thus, a thinner etching stop layer can be used to produce a damascene interconnect structure and to achieve the purpose of reducing effective capacitance and RC lag time, so that the present manufacturing process of damascene interconnect can be applied to new generation ultra-large-scale integration (ULSI).
Patent TW-386912-B (TW)
Title: A fluorometric method for increasing the efficiency of the rinsing and water recovery process in the manufacture of semiconductor chips
Inventor: JENKINS BRIAN V
IPC: H01L21/304
Filed: 1998-10-20
Granted: 2000-04-11
Abstract: A method for determining wafer clealiness by fluorometric monitoring of the impurities in the semiconductor chip wafer rinse solution. A clean chip is indicated by a leveling off of increased concentration of impurities as the rinsing of the chip progresses. A method for optimizing reuse or recyling of the water discharged from the rinse process which accurately measures the contaminants in that water.
Patent TW-363905-B (TW)
Title: Recycling process for copper-containing waste
Inventor: CHEN SHU-YA
IPC: C22B7/00
Filed: 1998-09-21
Granted: 1999-07-11
Abstract: The present invention relates to a recycling process for copper-containing waste characterized by adding sulfuric acid into the cooper-containing waste and subjecting it to acidation. After filtering and separation, the resulting copper sulfate mother liquid is subjected to condensation to produces useful substance of anhydrous copper sulfate, and the waste acid liquid produced in the process can be recycled repetitively and used as water for the process, so the process is free of secondary pollution.
Patent TW-388887-B (TW)
Title: Multi-layer insulated wire and transformer using it
Inventor: CHIDA NAOYUKI
IPC: H01B3/44
Filed: 1998-10-06
Granted: 2000-05-01
Abstract: A multilayer insulating wire having two or more extrusion covering insulating layers formed on a conductor directly or through a layer, or formed outside a multi-core wire constituted by bundling a plurality of conductor cores or insulated cores. At least one of the insulating layers is made of a mixture of 100 parts by weight of a polyethersulfone resin and 10 to 100 parts by weight of an inorganic filler. A transformer using such multilayer insulated wires are also disclosed. The transformer using such wire can realize a heat resistance of at least the F class (155 DEG C) conforming to the IEC 950 Standards, and can exhibit excellent electric characteristics even at high frequencies. The electric characteristics of such a transformer are not lowered even at high frequencies, and influence by generation of heat can be prevented.
Patent TW-399262-B (TW)
Title: Thin film deposition apparatus
Inventor: SAKAI SUMIO
IPC: C23C16/04
Filed: 1998-10-09
Granted: 2000-07-21
Abstract: A thin film deposition apparatus that positions a substrate-having a first surface region made of a first material and a second surface region made of a second material that is different to the first material-inside a process chamber and introduces a reactive gas into this process chamber, and which exploits a difference in surface reactions between said first and second surface regions to deposit a thin film only on said first surface region, which apparatus is equipped with a reforming gas introduction system that introduces into said process chamber a reforming gas that either reforms the surfaces at exposed positions inside said process chamber so that they are made of said second material, or reforms them so that a similar difference in surface reactions as in the case of the second material is obtained.
Patent TW-464823-B (TW)
Title: Integrated POS input device
Inventor: LUM JACKSON
IPC: G06F3/00
Filed: 1999-01-20
Granted: 2001-11-21
Abstract: An integrated point of sale input device, including a keyboard in combination with one or more components including: bad code scanner, credit card reader, smart card reader and/or mouse pad.
Patent TW-575405-B (TW)
Title: Biodegradable filter for cigarettes
Inventor: MENTZEL EDGAR
IPC: A24D3/00
Filed: 1998-11-20
Granted: 2004-02-11
Abstract: A filter for tobacco products, in particular cigarettes, is made of a cellulose nonwoven fabric produced by an air-laid process and spirally rolled.
Patent TW-399264-B (TW)
Title: Method for reducing the fluorine content on metal pad surface
Inventor: YOU JIA-JIE
IPC: H01L21/60
Filed: 1998-11-27
Granted: 2000-07-21
Abstract: There is disclosed a method to reduce the fluorine content on metal pad surface. A single mask is used to produce the polyimide layer. An etching process is then executed. After the metal pad is exposed, de-ionic water contained with CO2 is applied to clean the wafers, so as to reduce the fluorine content on the exposed metal pad surface.
Patent TW-440768-B (TW)
Title: Method and device for executing bus transaction sequentially and simultaneously in one bus bridge
Inventor: WANG WAN-GUANG
IPC: G06F13/36
Filed: 1998-12-11
Granted: 2001-06-16
Abstract: It is a method and device for executing bus transaction sequentially and simultaneously in one bus bridge. To follow sorting rules, this invention uses a OLD/HLDA signal handshaking mechanism to control the transaction flow in the bus bridge. When the signals HOLD and HLDA are asserted simultaneously, the bus bridge suspends to one direction to process transaction, and then the bus bridge can process transaction from another direction. That is, when the bus bridge has request of transaction from another direction, it first controls transaction flow, and simultaneously asserts a HOLD signal. After receiving the HLDA instruction signal meaning that transaction to one direction is processed completely, the bus bridge grants the usage of the bus for asking the agents to permit transaction process from another transaction direction. This invention also provides an anti dead lock method. The bus bridge can retry transaction transmission under two situations of the bus occupied. The bus bridge retries non-postable transaction till the postable transaction in posting buffer of the same direction is completed at the destination. The bus bridge retries postable transaction till there is enough space to receive transaction transmission in posting buffer of the same direction under the second situation.
Patent TW-550069-B (TW)
Title: Pharmaceutical compositions for use in treatment of female sexual dysfunction
Inventor: EL-RASHIDY RAGAB
IPC: A61K31/485
Filed: 1999-01-29
Granted: 2003-09-01
Abstract: Sexual dysfunction in human females can be ameliorated, without substantial undesirable side effects, by sublingual administration of apomorphine dosage forms. Administration of apomorphine increases nerve stimulated clitoral intracavernosal blood flow and vaginal wall blood flow for enhanced clitoral erection and vaginal engorgement in a female. A plasma concentration of apomorphine of no more than about 5.5 nanograms per milliliter is preferably maintained.
Patent TW-490470-B (TW)
Title: Transition metal compound, polymerization catalyst comprising it, and method for producing polymers using the polymerization catalyst
Inventor: AOYAMA YOSHIAKI
IPC: C07F17/00
Filed: 1999-02-23
Granted: 2002-06-11
Abstract: A transition compound represented by the general formula RMXa-1Lb ... (I), in which: R is a π ligand; a substituent or substituted fluoro group with at least one of its substituent being an alkyl group containing more than two carbons, or a substituted cyclopentadienyl group with at least one of its substitutent being an alkyl group containing more than two carbons, at least one of the polymembered ring bonded to the substituted cyclopentadienyl group represents a condensed polymembered cyclopentadienyl group of a saturated ring; M is a transition metal; X is a δ ligand; L is a Lewis base; (a) is a valence of M; (b) is 0, 1 or 2; in the case where L is a plural number, each L can be the same or different.
Patent TW-528754-B (TW)
Title: Indolyl derivatibes as serotonergic agents
Inventor: KELLY MICHAEL GERARD
IPC: A61K31/445
Filed: 1999-04-27
Granted: 2003-04-21
Abstract: The present invention provides compounds of formula (1): wherein R1 and R2 each independently represent hydrogen, hydroxy, F, Cl, Br, I, CN, 1 to 6 carbon alkyl, 1 to 6 carbon alkoxy, nitro CF3 and phenyloxy or benzyloxy, in which the aromatic ring can be optionally substituted by from 1 to 3 groups selected from C1-C6 alkoxy (preferably Ome), F, Cl, Br, I, and CF3; R3 and R4 are each independently a hydrogen, a 1 to 6 carbon alkyl or a CH2Ph in which the phenyl ring can be optionally substituted by from 1 to 3 groups selected from C1-C6 alkoxy (preferably Ome), F, Cl, Br, I, and CF3; Y is selected from CH2 or CH and, X is selected from a group represented by N, CR3, CHR3, CHCH; or a pharmaceutically acceptable salt thereof, as well as pharmaceutical compositions and methods of using the compounds to treat central nervous system disorders, such as depression, anxiety, drug withdrawal, eating and sexual disorders and other conditions for which serotonin reuptake inhibitors are used.
Patent TW-421894-B (TW)
Title: Semiconductor device and manufacture thereof
Inventor: SOGO SEIJI
IPC: H01L21/336
Filed: 1999-06-09
Granted: 2001-02-11
Abstract: The present invention provides a semiconductor device which is capable of decreasing the on resistance and increasing the breakdown voltage between a drain and a source, and its manufacturing method. A P-type buried region 2 is formed in the interior of an extension drain region 3 and an N-type heavily doped region 1 is formed over the region 2. The region 2 is formed through a high-energy boron implantation method or a thermal diffusion method. The region 1 is formed through doping impurities, such as phosphorus or arsenic, to one part of the surface of the region 3 or the entire surface of the region 3 through an ion implantation method or a POCl3 diffusion method. When a MOSFET is operated, a current is made to flow through the region 1, whereby an on-resistance of the MOSFET is reduced.
Patent TW-432866-B (TW)
Title: Storage pixel sensor and array with compression
Inventor: MERRILL RICHARD B
IPC: H04N5/355
Filed: 1999-06-17
Granted: 2001-05-01
Abstract: A storage pixel sensor disposed on a semiconductor substrate comprises a photosensor. At least one nonlinear capacitive element is coupled to the photosensor. At least one nonlinear capacitive element is arranged to have a compressive photocharge-to-voltage gain function. An amplifier has an input coupled to the nonlinear capacitor and an output. Other, non-capacitive elements may be employed to produce a compressive photo-charge-to-voltage gain having at least one breakpoint.
Patent TW-432411-B (TW)
Title: Thin metal plate stack assembly and method of making the same
Inventor: ITO KUNIO
IPC: H01F27/245
Filed: 1999-07-16
Granted: 2001-05-01
Abstract: Disclosed is a thin plate stack assembly formed by stacking a plurality of metallic thin plates and connecting the thin plates to one another, wherein each thin plate comprises a slit and formed leaf which is formed by press working to downwardly slit and form a partial area which is surrounded by an outer edge which is a part of the outer periphery of a thin plate, side edges extending by a certain length toward the inside from both ends of the outer edge, and an inner edge connecting the inside ends of the side edges to each other, and which is bent obliquely downward from said thin plate at the location of said inner edge. The side edges are cut from the thin plate, and a slit and formed hole formed behind the slit and formed leaf, and the slit and formed leaf of each thin plate is inserted into the slit and formed hole in a thin plate disposed just under the thin plate in force fitting for connecting the upper and lower thin plates to each other.
Patent TW-436269-B (TW)
Title: Incorporation of smoke-modifying agents in smoking material rods
Inventor: OLIVER RICHARD
IPC: A24D1/00
Filed: 1999-08-13
Granted: 2001-05-28
Abstract: A method of incorporating fibriform smoke-modifying material in smoking material rod, wherein fibriform smoke-modifying material is fed longitudinally thereof to a rod making machine. The longitudinal feed path in the machine is in a travel direction of the smoking material deposition run of the suction band of the machine. The fibriform material is either constrained by guide means in the machine to follow a feed path spaced from the run of the suction band against the suction force towards the run or the feed path of the fibriform smoke-modifying material is caused to ascend toward the deposition run under the influence of the suction force toward the run, until at a predetermined distance along the deposition run the finbriform material becomes supported and is subsequently maintained at a predetermined distance from the run by particulate smoking material deposited on the run. Thereafter further smoking material is deposited on the deposition run.
Patent TW-410153-B (TW)
Title: Methods for estimating a broadband ultrasound attenuation value and a corresponding value of a member
Inventor: GOLL JEFFREY H
IPC: A61B8/08
Filed: 1999-08-16
Granted: 2000-11-01
Abstract: An apparatus and methods for determining a measure equivalent to broadband sound attenuation from transient or other measures derived from acoustic signals propagated through bone and, additionally, for using this measure for the  calibration of an ultrasound bone analysis instrument. A synthetic mathematical filter corresponding to a given value of broadband ultrasound attenuation is applied to the signal propagated through a calibration of known or neutral acoustic properties. The value of the acoustic measure corresponding to the resultant waveform is determined and associated with the broadband ultrasound attenuation value corresponding to the synthetic mathematical filter. A modell relating the acoustic measure to BUA values may thereby be established for subsequent clinical application.
Patent TW-440959-B (TW)
Title: Low imprint ferroelectric material for long retention memory and method of making the same
Inventor: ARITA KOJI
IPC: H01L21/316
Filed: 1999-10-07
Granted: 2001-06-16
Abstract: A liquid precursor for forming a thin film (313) of ferroelectric metal oxide in an integrated circuit contains metal oxides in excess of the stoichiometrically balanced amount. When the precursor comprises strontium, bismuth, tantalum and niobium for forming strontium bismuth tantalum niobate, the precursor contains excess amounts of at least one of tantalum and niobium. Capacitors containing thin films (313) of layered superlattice material made from a precursor containing excess tantalum and niobium show good polarizability and low percentage imprint after 10<SP>10</SP> negative polarization switching pulses at 75 DEG C , and after 10<SP>9</SP> negative polarization switching pulses at 125 DEG C.
Patent TW-436903-B (TW)
Title: Method for forming electrostatic protection device in integrated circuit
Inventor: LIN GENG-LI
IPC: H01L21/28
Filed: 1999-10-29
Granted: 2001-05-28
Abstract: A method for forming an electrostatic protection device in an integrated circuit (IC) comprises forming a P-type well, a N-type well and an insulation barrier on a semiconductor substrate; forming a N-type MOSFET structure including a gate dielectric layer, a gate conductive layer, a source/drain region, a lightly doped source/drain region and a dielectric spacer; which is characterized in that the present invention changes the design of the photomask and also performs an ion implantation of the N-type well on a portion of the source/drain region of the N-type MOSFET thereby forming a N-type well, and using a P-type semiconductor material to perform an electrostatic protection ion implantation to form a heavily doped electrostatic protection region below the source/drain region.
Patent TW-451193-B (TW)
Title: A method to determine the timing setting value of dynamic random access memory
Inventor: WU CHUNG-CHE
IPC: G06F13/42
Filed: 1999-11-30
Granted: 2001-08-21
Abstract: This invention introduces a method to determine the timing setting value of dynamic random access memory (DRAM). By utilizing the serial presence detect (SPD) data inside the DRAM module, the operating frequency of the DRAM is determined first. The timing setting value of the DRAM module under this operating frequency can be determined by reading the SPD data two times. Then, by writing the operating frequency and the timing setting value into the DRAM controller, the initial setup for the DRAM is completed. The start-up procedure is proceeded next.
Patent TW-426947-B (TW)
Title: Method of producing trench capacitor
Inventor: WEI HOUNG-CHI
IPC: H01L21/8242
Filed: 1999-12-09
Granted: 2001-03-21
Abstract: A method of producing a trench capacitor comprises: forming a trench on a semiconductor substrate, the trench having a bottom and at least a sidewall; forming a diffusion layer in the semiconductor substrate and surrounding the bottom of the trench and at least a predetermined position of a sidewall; forming a first polysilicon layer on the bottom of the trench, the first polysilicon layer and at least one of sidewall being not connected to each other; forming a first dielectric layer at least fully covering the first polysilicon layer and the diffusion layer; and forming an upper electrode layer at least covering the first dielectric layer.
Patent TW-453097-B (TW)
Title: Automatic telephone searching system
Inventor: JOU HUNG
IPC: H04M3/54
Filed: 1999-12-16
Granted: 2001-09-01
Abstract: An automatic telephone searching system is provided to install a card-reading device on a telephone set. The user can use an extension telephone to read the data from the identification (ID) card of the user through the car-reading device. Then, the switchboard of the telephone system can automatically forward the incoming phone calls to the extension telephone of the user and, in the meantime, to locate the user of the extension telephone through the telephone exchange of the telephone system. Therefore, the user will not miss any phone call. The whole operation is simplified since it only needs to read the ID card without the need of resetting the telephone system. Moreover, there is no need for the user to use the same extension telephone for the forwarded phone calls. The goal to instantaneously accomplish to forward the incoming phone calls to follow the user can be achieved.
Patent TW-418131-B (TW)
Title: A nozzle for continuous casting
Inventor: ANDO MITURU
IPC: B22D11/10
Filed: 1999-12-17
Granted: 2001-01-11
Abstract: A continuous casting nozzle for molten steel, characterized in that an inner hole surface layer in contact with molten steel of the continuous casting nozzle comprises a composition consisting of (a) 30 to 84 wt.% of agalmatolite, (b) 15 to 60 wt.% of an aggregate consisting of Al2O3 or an aggregate mainly consisting of Al2O3 and having a melting point of 1800 DEG C or higher, and (c) 1 to 10 wt.% of silicon carbide.
Patent TW-445379-B (TW)
Title: Projection type display apparatus and prism used therein
Inventor: KATO HISAMARO
IPC: H04N5/74
Filed: 1999-12-21
Granted: 2001-07-11
Abstract: To reduce the size of a projection type display apparatus of the type which uses an optical modulator that modulates light by controlling the emitting direction of light applied to a light illumination surface in accordance with image information. A prism has a selective reflection/transmission surface which reflects illumination light emitted from an illumination optical system and impinging upon it and causes it to impinge upon the light illumination surface of an optical modulator at a predetermined angle and which allows the modulated light emitted from the optical modulator to be transmitted therethrough and emits it to the projection optical system. The selective reflection/transmission surface formed such that when the optical path of the illumination light is projected onto a plane parallel to the light illumination surface, the inclination of the central axis of the illumination light emitted from the illumination optical system and impinging upon the selective reflection/transmission surface is different from the inclination of the central axis of the illumination light reflected by the selective reflection/transmission surface and impinging upon the light illumination surface.