baber/WOPTO huggingface dataset:
Patent TW-202203305-A (TW)
Inventor: LEI YU
IPC: H01L21/285
Filed: 2019-05-02
Abstract: Apparatuses and methods to provide electronic devices having metal films are provided. Some embodiments of the disclosure utilize a metallic tungsten layer as a liner that is filled with a metal film comprising cobalt. The metallic tungsten layer has good adhesion to the cobalt leading to enhanced cobalt gap-fill performance.
Patent TW-202232804-A (TW)
Inventor: HSIEH SHU-HUEI
IPC: H01G11/34
Filed: 2021-10-15
Abstract: The present invention discloses a method for making lead-carbon electrode sheets, lead-carbon electrode sheets and lead-carbon battery. The method consists of steps of oxidizing lead under low-temperature atmosphere and the oxidized lead is used as interface layer of lead-carbon coupling, and using a specialized ventilation method for the carbon to coat the lead. The interface layer of oxidized lead forms a stable interface between the carbon and the lead. Meanwhile, through controlling pressure and temperature, a multi-porous metal composite is formed and the porosity can be penetration paths for air and liquid when applied. The lead-carbon composite is applied as a lead-carbon electrode sheet and is further welded as a lead-carbon electrode sheet of a lead-carbon battery. The lead-carbon battery carrying the lead-carbon electrode demonstrates Coulomb efficiency of 100% without heat loss on an unsaturated charge-discharge condition of high-efficiency charging and high-efficiency discharging.
Patent TW-202233576-A (TW)
Title: Method of producing 3-methyl-4-halo-indole derivative
Inventor: SAKURAI Natsuki
IPC: C07D209/08
Filed: 2021-10-29
Abstract: The present inventors found a novel method of reducing a formyl group with the use of a Lewis acid and a hydride reducing agent in a production process of a 3-methyl-4-halo-indole derivative. Further, the present inventors found that demethylation and/or dehalogenation of the aforesaid derivative are suppressed by this method so that a posttreatment can be facilitated or the derivative can be obtained at a high yield.
Patent TW-202319097-A (TW)
Title: 遠端控制遊戲機系統
Inventor: TENG HO-TIEN
IPC: A63F13/235
Filed: 2021-11-01
Abstract: 本發明之遠端控制遊戲機系統藉由其投注遊戲設置之網路攝影機及影像擷取器，使遠端玩家進行其遠端遊戲時，可及時觀看及監控其所投注之遊戲，除可增加臨場感外，亦可確保其參與遠端遊戲之公正性。
Patent TW-202301052-A (TW)
Title: Communication cycle determination apparatus, communication cycle determination method, and communication cycle determination program
Inventor: OGAWA TOMOTAKA
IPC: H02P5/46
Filed: 2021-11-12
Abstract: A counter variable search unit (121) finds a counter variable from a control program. A remainder calculation search unit (122) finds, from the control program, a remainder calculation for the counter variable. A branch instruction search unit (123) finds, from the control program, a condition branch instruction for a remainder of the remainder calculation. An input/output variable extraction unit (124) extracts an input/output variable from a branch destination block of the condition branch instruction. A target appliance identification unit (125) identifies a target appliance to/from which a value of the extracted input/output variable is inputted/outputted. A communication cycle determination unit (126) determines a communication cycle of the identified target appliance.
Patent TW-202229196-A (TW)
Inventor: BEALL GEORGE HALSEY
IPC: C03C10/14
Filed: 2021-11-12
Abstract: 本揭露內容的一個實施例有關於帶有包括矽鐵鋇礦結晶體相(BaFeSi
         4 O
         10 )的相組合的玻璃陶瓷。根據一些實施例，玻璃陶瓷包括以下至少一種：(a)矽酸鋇相、(b)二氧化矽結晶體相、(c)矽酸鐵相。
Patent TW-202233746-A (TW)
Title: Liquid crystal polyester resin composition and its molded product
Inventor: HARA TOMOYUKI
IPC: C08L67/00
Filed: 2017-12-27
Abstract: The present invention relates to a liquid crystal polyester resin composition comprising a liquid crystal polyester (A), a talc (B) and a mica (C), wherein a total amount of the talc (B) and the mica (C) is 5 parts by mass or more and 100 parts by mass or less with respect to 100 parts by mass of the liquid crystal polyester (A), and mass ratio of the talc (B) with respect to the mica (C) is 9/1 to 1/9.
Patent TW-202323106-A (TW)
Inventor: CHUANG LOUIS SHI-WEN
IPC: B62J1/28
Filed: 2021-12-07
Abstract: A bicycle lamp includes a first adhesive layer, a coupling module, and a lighting. One side of the first adhesive layer is provided with an outer adhesive surface, which can be stuck to a bicycle saddle. The bonding module is stuck to a surface of the first adhesive layer opposite to the outer adhesive surface. The lighting can be attached to the coupling module so that the lighting can be fixed in its relative position with the bicycle saddle or away from the bicycle saddle through the coupling module. Thus, the lamp can quickly attach with the bicycle saddle through the above structure.
Patent TW-202323604-A (TW)
Title: Method for adjusting thermal field of silicon carbide single crystal growth capable of reducing a gap between the guider and one of crucible walls of the graphite crucible
Inventor: CHEN HSUEH-I
IPC: C30B29/06
Filed: 2021-12-08
Abstract: The present invention provides a method for adjusting thermal field of silicon carbide single crystal growth, which includes steps of: (A) screening a silicon carbide source and filling it into the bottom of a graphite crucible; (B) placing a guider into the graphite crucible; (C) placing a rigid heat receiving material on the guider to reduce a gap between the guider and one of crucible walls of the graphite crucible; (D) fixing a seed crystal on top of the graphite crucible; (D) placing the graphite crucible loaded with the silicon carbide source and the seed crystal in an induction high temperature furnace for physical vapor transport; (E) performing a silicon carbide crystal growth process; and (F) obtaining a silicon carbide single crystal.
Patent TW-202231598-A (TW)
Title: Strengthened glass plate and production method therefor
Inventor: YUKI KEN
IPC: C03C17/245
Filed: 2021-12-28
Abstract: The strengthened glass plate according to the present invention has a compressive stress layer on the surface thereof, and is characterized by having a glass composition containing, on a molar basis, 55-80% of SiO2, 11-25% of Al2O3, 0.4-10% of B2O3, 0.02-15% of Li2O, 1-21% of Na2O, 0-10% of K2O, 0.01-5% of MgO, 0-15% of P2O5, and 0-0.30% of SnO2%, and having a molar ratio [MgO]/[Al2O3] ≤ 0.20 and a molar ratio ([Li2O] + [Na2O] + [K2O])/[Al2O3] ≥ 0.80.
Patent TW-202240839-A (TW)
Inventor: BOTHE KYLE
IPC: H03F3/213
Filed: 2022-01-07
Abstract: A gallium nitride-based RF transistor amplifier comprises a semiconductor layer structure comprising a barrier layer on a channel layer, first and second source/drain regions in the semiconductor layer structure, first and second source/drain contacts on the respective first and second source/drain regions, and a longitudinally-extending gate finger that is between the first and second source/drain contacts. The first and second source/drain contacts each has an inner sidewall that faces the gate finger and an opposed outer sidewall. The first source/drain region extends a first distance from a lower edge of the inner sidewall of the first source/drain contact towards the second source/drain region along a transverse axis that extends parallel to a plane defined by the upper surface of the semiconductor layer structure, and extends a second, smaller distance from a lower edge of the outer sidewall of the first source/drain contact away from the second source/drain region.
Patent TW-202224433-A (TW)
Inventor: HELLE PHILIPP
IPC: H04N19/70
Filed: 2011-04-13
Abstract: 依據一實施例，資訊樣本陣列細分而成的單純連結區有利地合併或分組係以較少資料量編碼。為了達成此項目的，針對單純連結區，界定一預定相對位置關係，其允許針對一預定單純連結區而識別在多個單純連結區內部與該預定單純連結區具有預定相對位置關係的單純連結區。換言之，若該數目為零，則在該資料串流內部可能不存在有針對該預定單純連結區之一合併指標。依據又其它實施例，將表示該二維資訊信號空間取樣之一樣本區藉遞歸地多重分割而空間細分成多個不同大小的單純連結區，係依據含在該資料串流之一第一語法元素子集執行，接著為依據在該資料串流內部之一第二語法元素子集與該第一子集不相連接之一空間上鄰近單純連結區之組合，來獲得該樣本陣列之一中間細分成單純連結區之不相連接集合，其聯合為該等多個單純連結區。當從該資料串流重建樣本陣列時係使用該中間細分。
Patent TW-202236889-A (TW)
Title: 無線系統的同步通道存取控制
Inventor: XUE QI
IPC: H04W72/10
Filed: 2022-02-07
Abstract: 本案內容提供了用於無線系統的同步通道存取控制的系統、方法和裝置。在一些態樣中，設備可以使用TWT通信期來在一或多個TWT服務時段期間與第二設備進行通訊。上行鏈路和下行鏈路通訊可以被協調為兩者皆在TWT服務時段中，以允許設備在TWT服務時段之外進入低功率模式。TWT通信期（包括服務時段）可以由設備或第二設備配置和管理，以確保與設備之間的XR體驗相關聯的通訊（諸如作為上行鏈路資料提供的姿勢資料訊框或追蹤訊框以及作為下行鏈路資料提供的視訊資料訊框）滿足XR體驗的時延要求或其他要求。使用TWT服務時段允許其他設備在TWT服務時段之外使用無線媒體。
Patent TW-202236440-A (TW)
Title: Method of manufacturing member having solder bump, member having solder bump, and member for forming solder bump
Inventor: KAKEHATA Junichi
IPC: H01L23/488
Filed: 2022-02-09
Abstract: A method of manufacturing a member having a solder bump, comprising: a preparation step for preparing a base body with a plurality of recessed portions having roughness on a bottom surface; a disposition step for disposing solder particles in the recessed portions; and a pressing step for pressing the base body and a substrate having an electrode in a state in which the solder particles and the electrode face each other, bringing the solder particles and the electrode into contact with each other, and forming, on the electrode, a solder bump having a recess at least in part of a surface.
Patent TW-202237511-A (TW)
Inventor: IWATA MASASHIGE
IPC: B65G35/00
Filed: 2022-02-10
Abstract: A transport vehicle (100) comprises: a container group support unit (2) that supports a plurality of containers (70) as a group (7) of stacked containers within a specified stacking area (2A); a lifting device (3) that lifts the containers (70) of the group (7) of containers supported by the container group support unit (2); and a transfer device (4) that transfers the containers (70). The lifting device (3) is equipped with: a first lifting mechanism (31) that lifts a container (70) at optional height among the group (7) of containers stacked in the stacking area (2A) with respect to a container (70) adjacent under the container (70); and a second lifting mechanism (32) that lifts a container (70) located below the container (70) lifted by the first lifting mechanism (31) with respect to a container (70) adjacent under the container (70).
Patent TW-202226776-A (TW)
Title: Method for wireless communication, and apparatus and computer readable medium thereof
Inventor: HUANG YI
IPC: H04L1/18
Filed: 2019-01-18
Abstract: Methods, systems, and devices for wireless communications are described that support splitting resources among different types of control information and uplink data for transmission on an uplink shared channel. A base station may transmit a grant indicating resource elements (REs) of an uplink shared channel allocated to a user equipment (UE) for an uplink transmission. The UE may process the grant and split the granted REs between different types of uplink control information (UCI) and uplink data based on a reference payload size. The UE may generate an uplink transmission based on the splitting of the REs, and may transmit the uplink transmission in the REs of the uplink shared channel indicated in the grant. The base station may monitor the REs of the uplink shared channel for the uplink transmission in accordance with the splitting of the plurality of REs.
Patent TW-202234514-A (TW)
Title: Plasma treatment device
Inventor: TAMURA TOMOYUKI
IPC: H01L21/3065
Filed: 2022-02-24
Abstract: In order to provide a plasma treatment device that stabilizes the potential of wafers being treated and improves treatment yield, this plasma treatment device comprises: a treatment chamber that is disposed inside a vacuum container and forms plasma inside the treatment chamber; a wafer stage disposed inside the treatment chamber and having a wafer to be treated placed thereupon; an electrostatic chuck that is disposed inside a dielectric membrane covering the upper surface of the wafer stage and includes a film-shaped electrostatic-adsorption electrode for electrostatic adsorption of the wafer placed upon the dielectric membrane; a high-frequency electrode disposed inside the wafer stage and having high-frequency power supplied thereto during wafer treatment; and a lift pin disposed inside the wafer stage, moving vertically to raise and lower the wafer, and having a lower section thereof connected to a conductive member. The resistance Rps between a DC power supply and the lower section of the lift pin connected to the DC power supply is set in the range of 100 M[Omega] > Rps > 1/{Vt/(([delta]max-Vt).Rc)) - (1/Resc)}, when Resc is the electrical resistance between the electrostatic-adsorption electrode and the wafer, Rc is the electrical resistance between the plasma and a ground electrode via an inner wall surface of the treatment chamber, Vt is the withstand voltage between the plasma and the vacuum container constituting the treatment chamber, and [delta]max is the maximum predicted value for the difference between the actual bias voltage Vdc generated by the wafer during wafer treatment and the predicted bias voltage Vdcs. When Eesc is the average value for the electrostatic-adsorption electrode potential, the lift pin lower section voltage Eps during wafer treatment and the average value Eesc for the electrostatic-adsorption electrode potential are adjusted so as to match the expected value Vdcs for the wafer bias voltage.
Patent TW-202237942-A (TW)
Title: Frog, and method for producing wing rails for a frog
Inventor: SCHMOCK MARTIN
IPC: E01B7/14
Filed: 2022-03-04
Abstract: The invention relates to a frog (10) and to a method for producing such a frog, comprising wing rails (16, 18) each having at least one railhead (62, 64) and one rail web (66, 68), and comprising a frog point (12) arranged movably between the wing rails, wherein, in the region of the frog point, a wheel transfer zone extends between the frog point and the wing rail with which the frog point is in contact. Separately from the frog point (12), each wing rail (16, 18) has a portion (20, 22) which extends at least over the length of the wheel transfer zone and which is made from a forged block.
Patent TW-202335981-A (TW)
Title: Liquid glass flow-through device for glass manufacturing system comprising a first flow-through part, a second flow-through part, and a first blocking part
Inventor: ICHIKAWA MANABU
IPC: C03B7/02
Filed: 2022-03-09
Abstract: A liquid glass flow-through device for a glass manufacturing system comprises a first flow-through part, a second flow-through part communicating with the first flow-through part, and a first blocking part arranged between the first flow-through part and the second flow-through part and connecting the first flow-through part and the second flow-through part. The first blocking part has a first upper flow-through area communicating with the first flow-through part and the second flow-through part, a first lower flow-through area communicating with the first flow-through part and the second flow-through part, and a first blocking area connecting the first upper flow-through area and the first lower flow-through area.
Patent TW-202303967-A (TW)
Title: Semiconductor devices and methods of manufacturing thereof
Inventor: CHENG WEN-HAO
IPC: H01L21/324
Filed: 2022-03-24
Abstract: A semiconductor device includes a device feature. The semiconductor device includes a first silicide layer having a first metal, wherein the first silicide layer is embedded in the device feature. The semiconductor device includes a second silicide layer having a second metal, wherein the second silicide layer, disposed above the device feature, comprises a first portion directly contacting the first silicide layer. The first metal is different from the second metal.
Patent TW-202246518-A (TW)
Title: Genetically modified oncolytic herpes simplex virus delivering chemokine and tumor associated/specific antigen
Inventor: Chen xiao-qing
IPC: A61K35/763
Filed: 2022-04-08
Abstract: Disclosed is a genetically modified oncolytic herpes simplex virus (oHSV) encoding a truncated nonsignaling variant of at least one tumor associated/specific antigen, and at least one chemokine. The expression of the truncated nonsignaling variant and the chemokine is under the control of an immediate-early gene promoter of HSV, and the truncated nonsignaling variant is expressed and presented on a tumor cell surface as a biomarker upon replication of the oHSV in the tumor cell, and the chemokine is expressed and released to induce chemotaxis of an immune cell towards the tumor cell. The genetically modified oHSV can be used in combination with CAR-T, ADC, and/or BiTE therapies.
Patent TW-202303855-A (TW)
Title: Method of forming integrated circuit
Inventor: Lin zhi-chang
IPC: H01L21/76
Filed: 2022-04-11
Abstract: A method for forming a gate all around transistor includes forming a plurality of semiconductor nanosheets. The method includes forming a cladding inner spacer between a source region of the transistor and a gate region of the transistor. The method includes forming sheet inner spacers between the semiconductor nanosheets in a separate deposition process from the cladding inner spacer.
Patent TW-202245766-A (TW)
Inventor: BARROW ROBERT
IPC: A61P29/00
Filed: 2022-05-03
Abstract: 揭露了一種治療疼痛之方法，該方法藉由如下進行：將有效量的致幻劑投與於個體以及治療該個體之疼痛。
Patent TW-202317454-A (TW)
Title: Packaging material for packaging object to be transported between cleanrooms, packaging method, and transport method
Inventor: SATOH SEIJI
IPC: B65G49/07
Filed: 2022-05-30
Abstract: The present invention is a packaging material for packaging an object to be transported between cleanrooms. The packaging material is for packaging an FOUP or FOSB for transport between clean areas of a semiconductor factory and is characterized by including a dustless cloth that is dust and moisture resistant. The packaging material makes it possible to transport the object to be transported, i.e., the FOUP or FOSB, between cleanrooms at low cost while keeping the object to be transported very clean.
Patent TW-202312151-A (TW)
Title: Signal masking circuit and semiconductor memory
Inventor: Li si-man
IPC: G11C7/10
Filed: 2022-06-02
Abstract: A signal masking circuit and a semiconductor memory are provided. The signal masking circuit includes a receiving circuit, a delay control circuit, and a logical operation circuit. The receiving circuit is configured to: receive a signal to be processed and a chip select (CS) signal, and output an initial processing signal and an initial CS signal. The delay control circuit is configured to perform delay and logical control operations on the initial CS signal to obtain a CS masking signal, where a pulse width of the CS masking signal is greater than or equal to two preset clock periods. The logical operation circuit is configured to perform invalid masking on the initial processing signal according to the CS masking signal to obtain a target signal. Therefore, current waste can be minimized to reduce power consumption while ensuring that the Dynamic Random Access Memory (DRAM) does not lose valid information.
Patent TW-202337011-A (TW)
Title: Semiconductor device and manufacturing method thereof
Inventor: KANAZAWA RIKITO
IPC: H01L29/78
Filed: 2022-07-04
Abstract: A semiconductor device includes a body including conductive layers stacked and spaced from each other in a first direction and first and second areas along a second direction intersecting the first direction, an insulating portion extending along the directions in the areas and dividing the conductive layers in a third direction intersecting the directions, first columnar portions extending along the first direction in the first area and including a semiconductor layer, memory cells being formed at intersections between the conductive and semiconductor layers, second columnar portions extending along the first direction in the second area and including an insulator, third columnar portions extending along the first direction in the second area and including a semiconductor layer, and contacts extending along the first direction in the second area and connected to a conductive layer. The second portions are arranged along the insulating portion on both sides thereof in the third direction.
Patent TW-202316495-A (TW)
Inventor: YOO TAE-HEE
IPC: H01L21/205
Filed: 2022-07-19
Abstract: 一種無空隙或接縫地填充凹部之基材處理方法包括：用一第一材料在包括溝槽之基材上至少部分地填充溝槽；及供應包括於第一材料中之至少一組成元素，且施加電漿以誘發第一材料之流體化。
Patent TW-202305866-A (TW)
Title: Plasma processing device and inner wall component thereof characterized by preventing the particle pollutants from accumulating on the surface of the substrate and the parts around the substrate and keeping the cleanliness of the etching environment
Inventor: LIAN ZENG-DI
IPC: H01L21/67
Filed: 2022-07-19
Abstract: Disclosed is a plasma processing device and an inner wall component thereof. The plasma processing device includes a reaction chamber, an inner wall component disposed on the inside wall of the reaction chamber, a plasma confinement ring disposed in the reaction chamber and a gas exhaust device disposed on the bottom of the reaction chamber. The inner wall component includes a cylinder part enclosed to be a plasma environment processing space. The inside wall of the cylinder part is provided with arc-shaped grooves, and the arc-shaped grooves extend downwards from the top of the inside wall of the cylinder part, and the plasma confinement ring has multiple obliquely downward gas exhaust channels. The invention allows the gas flow exhausted through the inside wall of the inner wall component and the plasma confinement ring to form a vortex structure. The tiny particles in the gas flow collide with each other and agglomerate to form large particles of pollutants, which are discharged from the reaction chamber, thereby preventing the particle pollutants from accumulating on the surface of the substrate and the parts around the substrate, and keeping the cleanliness of the etching environment.
Patent TW-202335459-A (TW)
Title: Semiconductor integrated circuit and receiver device
Inventor: TACHIBANA FUMIHIKO
IPC: H04L7/02
Filed: 2022-07-21
Abstract: According to one embodiment, a semiconductor integrated circuit includes: a converter configured to convert an analog signal into a digital signal based on a clock signal; a comparator configured to determine first data having data of a first number of bits per symbol and second data having data of a second number of bits, less than the first number, per symbol based on the digital signal; a recovery circuit configured to recover the clock signal; and a control circuit configured to input the digital signal and the first data to the recovery circuit in a case where a condition is not satisfied, and to input the digital signal and the second data to the recovery circuit in a case where the condition is satisfied.
Patent TW-202315610-A (TW)
Title: Compositions and methods for inhibition of ras
Inventor: WANG BIN
IPC: A61K31/397
Filed: 2022-07-22
Abstract: Provided herein are compounds, or salts, esters, tautomers, prodrugs, zwitterionic forms, or stereoisomers thereof, as well as pharmaceutical compositions comprising the same. Also provided herein are methods of using the same in modulating (e.g., inhibiting) KRAS (
         e.g. , KRAS having a G12C mutation) and treating diseases or disorders such as cancers in subjects in need thereof.
Patent TW-202314704-A (TW)
Inventor: CHANG MENG-FAN
IPC: G11C11/40
Filed: 2022-07-25
Abstract: A memory includes a memory device, a reading device and a feedback device. The memory device stores a plurality of bits. The reading device includes first and second reading circuits coupled to the memory device. The second reading circuit is coupled to the first reading circuit at a first node. The first and second reading circuits cooperates with each other to generate a first voltage signal at the first node based on at least one first bit of the plurality of bits. The feedback device adjusts at least one of the first reading circuit or the second reading circuit based on the first voltage signal. The first and second reading circuits generate a second voltage signal, different from the first voltage signal, corresponding to the bits, after the at least one of the first reading circuit or the second reading circuit is adjusted by the feedback device.