baber/WOPTO huggingface dataset:
Patent TW-538425-B (TW)
Title: Reactor and method of processing a semiconductor substrate
Inventor: MAHAWILI IMAD
IPC: H01L21/324
Filed: 1998-08-12
Granted: 2003-06-21
Abstract: A reactor for processing a substrate includes a first housing defining a processing chamber and supporting a light source and a second housing rotatably supported in the first housing and adapted to rotatably support the substrate in the processing chamber. A heater for heating the substrate is supported by the first housing and is enclosed in the second housing. The reactor further includes at least one gas injector for injecting at least one gas into the processing chamber onto a discrete area of the substrate and a photon density sensor extending into the first housing for measuring the temperature of the substrate. The photon density sensor is adapted to move between a first position wherein the photon density sensor is directed to the light source and a second position wherein the photon density sensor is positioned for directing toward the substrate. Preferably, the communication cables comprise optical communication cables, for example sapphire or quartz communication cables. A method of processing a semiconductor substrate includes supporting the substrate in a sealed processing chamber. The substrate is rotated and heated in the processing chamber in which at least one reactant gas is injected. A photon density sensor for measuring the temperature of the substrate is positioned in the processing chamber and is first directed to a light, which is provided in the chamber, for measuring the incident photon density from the light and then repositioned to direct the photon density sensor to the substrate to measure the reflection of the light off the substrate. The incident photon density is compared to the reflected light to calculate the substrate temperature.
Patent TW-387081-B (TW)
Title: Method for on-line dynamically adjusting system parameters
Inventor: YU LIAN-PO
IPC: G06F7/00
Filed: 1998-08-21
Granted: 2000-04-11
Abstract: The invention relates a method for on-line dynamically adjusting system parameters, applying to a built-in system, for simplifying complicate procedures of testing adjustment during developing the system. By means of corresponding parameter indicators of parameter data in a plurality of directional parameter data sections in a program identity, the invention executes the program according to the content of each parameter data in a parameter data section, and only needs to directly correct the content of each parameter data in the parameter data section during system testing adjustment, and then the program continues working according to the corrected parameter data. Therefore, besides simplifying complicate procedures of testing adjustment and time reduction, the invention also can save the cost of developing software.
Patent TW-420960-B (TW)
Title: Strengthening the authentication protocol
Inventor: PATEL SARVAR
IPC: H04L9/32
Filed: 1998-09-08
Granted: 2001-02-01
Abstract: The present invention strengthens authentication protocols by making it more difficult for handset impersonators to gain system access using replay attacks. This goal is accomplished using challenge codes as a parameter for determining authentication codes, whereby different challenge codes cause different authentication codes to be generated. In one embodiment, the challenge codes are functions of challenge types (e.g., global or unique challenges) and/or handset states (e.g., call origination, page response, registration, idle, and SSD-A update). This embodiment prevents handset impersonators from successfully utilizing replay attacks to impersonate a legitimate handset if the legitimate handset is in a different state than the handset impersonator, or if the legitimate handset is responding to a different challenge type than the handset impersonator.
Patent TW-411495-B (TW)
Title: Semiconductor device having multiple overlapping rows of bond pads with conductive interconnects and method of pad placement
Inventor: TORRES VICTOR MANUEL
IPC: H01L23/485
Filed: 1998-09-22
Granted: 2000-11-11
Abstract: The present invention comprises a semiconductor device (20) having a active circuit (22) and a bond pad area (24). Within the bond pad area there are a plurality of rows of bond pads. Sets of bond pads (30-36) include one bond pad from each row. The bond pads (26) are uniquely positioned within the bond pad area (24) to allow for a first wire pitch between pads which are adjacent and in the same set, and a second wire pitch between pads which are adjacent and in different sets. A method of determining placement of the bond pads (26) is taught.
Patent TW-401520-B (TW)
Title: Dispersion shift optical fiber
Inventor: SASAOKA HIDEYORI
IPC: G02B6/036
Filed: 1998-10-01
Granted: 2000-08-11
Abstract: The invention furnishes a kind of dispersion shift optical fiber which can reduce the optical loss and non-lirear phenomenon, and diminish the appearances of signal light distortion. The dispersion shift optical fiber of the present invention is to constitute the core area refractivity profile by providing dispersion shift to the light beam with central wavelength in the range of about 1500~1600 nm. In addition, the constitution of the refractivity profile is to make the effective core cross section area Aeff above 70 mu m<2>, and to make the standard mode light power to move away from the core area central position (r=0) away from the first radial position which has the maximum value Pmax, and to move away from the first radial position to the outside perimeter second radial position which is separated by a distance of equivalent to 5 times the length of the above-mentioned wave length and with its light power P5 below 1/100 of the maximum power Pmax.
Patent TW-515809-B (TW)
Title: Process for the hydrogenation of aromatic polymers
Inventor: WEGE VOLKER
IPC: C08G75/20
Filed: 1998-12-18
Granted: 2003-01-01
Abstract: Process for the hydrogenation of aromatic polymers, wherein the solvent used is at least one ether which contains no Α-hydrogen atom on a carbon atom adjacent to the ether function or a mixture of this ether of mixtures of these ethers with solvents suitable for hydrogenation reactions.
Patent TW-411519-B (TW)
Title: Wafer scribe-line structure to avoid damages during scribing
Inventor: LIN CHI-FA
IPC: H01L21/301
Filed: 1999-02-04
Granted: 2000-11-11
Abstract: The present invention provides a wafer scribe-line structure. The wafer has a plurality of horizontal scribe-lines substantially parallel to each other, and a plurality of vertical scribe-lines substantially parallel to each other, so as to separate a plurality of chips in the wafer. In the present invention, each of the horizontal and vertical scribe-lines is divided into a plurality of portions, resulting in many rectangles of the same area. Each portion of one scribe-line is composed of the scribe-line structure, which includes a multi-layer structure having four sides and at least two rows of cavities formed along the four sides of the multi-layer structure. The cavities on the scribe-line structure is able to relieve the internal stress and arrest possible cracks during scribing. Consequently, scribing damages, such as de-lamination, peeling and dielectric fracture, can largely be avoided.
Patent TW-491920-B (TW)
Title: Method for working through ground and rock layers with dredgers or excavators and apparatuses operating according to this method
Inventor: VANDYCKE STEFAAN
IPC: E02F3/92
Filed: 1999-02-11
Granted: 2002-06-21
Abstract: The invention relates to a method for working through ground layers with dredgers or excavators, in which water jets (4) are injected in the area where a mechanical cutting or excavating component (2) is active at a pressure which is sufficiently high to cut open the ground layers in the vicinity of the cutting or excavating component (2) or cause them to fluidize. When the ground layers contain rock-like materials or consist of rock-like materials, the jets (4) also function to immediately remove broken-off materials from the location where the mechanical cutting or excavating component (2) is active and enhances the hydraulic fracturing in the non-crushed material in the immediate vicinity of the crushed material.
Patent TW-535019-B (TW)
Title: Liquid crystal display device
Inventor: WATANABE TAKESHI
IPC: G09F9/00
Filed: 1999-02-26
Granted: 2003-06-01
Abstract: The purpose of the present invention is to make a liquid crystal display device thin, in which the entire effective display region of a liquid crystal display element is irradiated by a lamp, and also provide a liquid crystal display device in which the entire effective display region of a liquid crystal display element is sufficiently illuminated by a lamp. A reflecting member 4c is provided on an end face of the side part opposing to a lamp 5, of a lower substrate 4a of a tablet 4. A liquid crystal display element 2 is illuminated with incident light from the lamp that enters inward from the end face of the lower substrate 4a, and the reflected light obtained by reflecting the incident light from the reflecting member 4c.
Patent TW-431893-B (TW)
Title: Absorbent article for absorption of bodily fluids deposited by a wearer and for helping maintain said wearer's skin pH at an acidic level
Inventor: MCOSKER JOCELYN ELAINE
IPC: A61F13/49
Filed: 1999-06-04
Granted: 2001-05-01
Abstract: An absorbent article that helps maintain a wearer's skin pH in an acidic condition is described. The absorbent article has a body contacting surface with a skin care composition that is transferred from the body contacting surface to the wearer's skin by contact, normal wearer motion and/or body heat. The skin care composition contains at least one proton donating active. Preferred proton donating actives include: monomeric organic acids, polymeric acids, and inorganic acid salts. The absorbent article also includes a liquid impermeable backsheet and an absorbent core positioned between the body contacting surface and the backsheet.
Patent TW-394813-B (TW)
Title: Turbine blade assembly with cooling air handling device
Inventor: SCHIAVO ANTHONY L
IPC: F01D5/08
Filed: 1999-03-16
Granted: 2000-06-21
Abstract: A turbine blade assembly including an airfoil portion, a root portion and a cooling air plenum tube. A cooling air flow path is formed in the root and airfoil portions of the blade and has first and second inlets and an outlet formed in the bottom of the root. The plenum tube has an open front end that forms a first supply port for receiving a flow of cooling air. Openings in the tube upper portion form first and second discharge ports and a second supply port. An open rear end of the tube forms a third discharge port. A baffle assembly within the plenum tube forms first, second, and third chambers and first and second passages. The first chamber receives cooling air from the first supply port and directs a first portion to the first discharge port, which then directs it to the first inlet of the cooling air flow path. The first chamber directs a second portion of the cooling air to the first passage which, in turn, directs it to the third chamber. From the third chamber the second portion of the cooling air is directed to the second discharge port, which then directs it to the second inlet of the cooling air flow path. The second chamber receives cooling air from the cooling flow path outlet via the second supply port and directs it to the second passage. The second passage then directs the cooling air to the third discharge port, which directs it away from the turbine blade, preferably, for return to the cooling air system.
Patent TW-520405-B (TW)
Title: Methods for etching a trench in a silicon layer
Inventor: KENNARD MARK A
IPC: H01J37/32
Filed: 1999-03-26
Granted: 2003-02-11
Abstract: A method for etching a trench in a monocrystal silicon layer. The method includes providing a plasma processing system having a plasma processing chamber. The plasma processing system has a variable plasma generation source and a variable ion energy source with the variable plasma generation source being configured to be controlled independently of the variable ion energy source. The method further includes flowing an etchant source gas that includes O2, helium, and at least one of SF6 and NF3 into the plasma processing chamber. There is also included energizing both the variable plasma generation source and the variable ion energy source to form a plasma from the etchant source gas. Additionally, there is included employing the plasma to etch the trench.
Patent TW-530180-B (TW)
Title: Active matrix type liquid crystal display
Inventor: YONEYA MAKOTO
IPC: G02F1/1343
Filed: 1999-04-27
Granted: 2003-05-01
Abstract: There will be provided an active matrix type liquid crystal display, which hardly generates display unevenness incident to electrode dimensional fluctuation caused by variations resulting from the electrode formation process, and is excellent in mass producibility in high image quality. An active matrix type liquid crystal display using the horizontal electric field system, wherein dimensional fluctuation in the active elements and the stored capacity formation portion, and finish dimensional fluctuation in the electrode for applying an electric field to the liquid crystal layer occur simultaneously, and variations in effective driving voltage caused by fluctuation in the active element dimension act in a direction to compensate for variations in the optical quality caused by dimensional fluctuation of the electrode for applying the electric field.
Patent TW-408417-B (TW)
Title: Planar-shape thin probe having electrostatic actuator manufactured by using sacrificed layer technology and its manufacturing method
Inventor: JOU ROU-FU
IPC: B81B3/00
Filed: 1999-05-03
Granted: 2000-10-11
Abstract: This invention discloses a planar-shape thin probe utilizing semiconductor process in combination withmicroelectroforming and sacrificial layer technique to integrate major components on the SOI wafer and the manufacture method thereof. Said planar type thin probe comprises an upper cantilever used as the first electrode plate; a supporting pad connecting the upper cantilever; and a lower cantilever connecting said supporting pad sited on the lower position of said upper cantilever and there remaining a space between said upper cantilever. Said lower cantilever comprises a second electrode plate which could be operated with said first electrode plate to apply the voltage from outside and control the displacement of said lower cantilever in vertical direction. Besides, said lower cantilever comprises a needle tip coupled to said second electrode to contact the measured object.
Patent TW-428392-B (TW)
Title: Network information providing method and device
Inventor: NINAGAWA MASAO
IPC: H04M1/725
Filed: 1999-06-11
Granted: 2001-04-01
Abstract: The present invention relates to a network information providing method and the device thereof that, when an user requests for network information transmission, it allows the user to use information related to the required transmission region (hereinafter referred to ""the user's transmission region"") for transmitting information corresponding to the user's transmission region through the Internet (WWW: World Wide Web) of information open system. The present invention aims to come up with a network information providing method and the device thereof that can transmit different network information in accordance with the user's transmission region even in the same uniform resource locator (URL). The means of the present invention are described as follows: The user terminal in the group (401) is connected through the private line (403) to the provider (405) and the user terminal requests through the private line (403) and the Internet (115) for transmitting network page information. The transmission request and the Internet protocol (IP) address of the user terminal are transmitted together to the network server where network page information is requested. The network server (119) has a combined database (201) that can select different information records in accordance with the required region to access IP addresses. Therefore, IP address of the user terminal can be used for determining the region where the user terminal is located. Then, the network server (119) can select the required network information in accordance with the determined region of the user terminal before transmitting the information to the user terminal.
Patent TW-I239962-B (TW)
Title: A catalyst composition and methods for its preparation and use in a polymerization process
Inventor: AGAPIOU AGAPIOS KYRIACOS
IPC: C08F2/18
Filed: 1999-07-01
Granted: 2005-09-21
Abstract: The present invention relates to a catalyst composition and a method for making the catalyst composition of a polymerization catalyst and a carboxylate metal salt. The invention is also directed to the use of the catalyst composition in the polymerization of olefin(s). In particular, the polymerization catalyst system is supported on a carrier. More particularly, the polymerization catalyst comprises a bulky ligand metallocene-type catalyst system.
Patent TW-426938-B (TW)
Title: Manufacturing method of shallow trench isolation
Inventor: WANG JIAN-RUNG
IPC: H01L21/76
Filed: 1999-07-15
Granted: 2001-03-21
Abstract: The present invention provides a manufacturing method of shallow trench isolation, which comprises the steps of: providing a silicon substrate; sequentially forming a pad oxide layer, a pad silicon nitride layer and a first dielectric layer on the silicon substrate, wherein the first dielectric layer can be Tetra-Ethyl-Ortho-Silicate which is also used as a hard mask layer in the subsequent etching and ion implantation processes; forming an opening in the pad silicon oxide layer, the pad silicon nitride layer and the first dielectric layer for exposing the substrate; implanting oxygen ions; etching the substrate to form a shallow trench; forming a liner oxide layer on the side wall and the bottom of the shallow trench, wherein a rapid thermal process can be used to form the liner oxide layer; and filling a second dielectric layer in the shallow trench.
Patent TW-428295-B (TW)
Title: Resin-sealing semiconductor device, the manufacturing method and the lead frame thereof
Inventor: MINAMIO MASANORI
IPC: H01L23/495
Filed: 1999-11-03
Granted: 2001-04-01
Abstract: The present invention provides a resin-sealing semiconductor device which comprises a QFN (quad flat non-leaded) structure with external terminals protruding downward as the QFN packaging (hereinafter referred to power QFN) for power components with excellent heat dissipation and highly selective chip dimensions. The power QFN comprises: the lead for signaling 1; a chip pad 2; a hanging lead 3; DB paste 7 for bonding with chip that those members are packaged by packaging resin 6. The lower portion of the signaling lead 1 is more protruded downward then the packaging resin 6 and playing as the external electrode 9. The hanging lead 3 is configured with two curved portions 13, 14 in order to absorb the deformation. Because the chip pad 2 is formed with half-sectioned portion 11 with the central portion 2a higher than the periphery 2b so as to prevent the mutual interference between the semiconductor chip 4 and the hanging lead 3. Therefore, the invention can not only freely choose the dimension of the semiconductor chip 4 but also improve the moisture resistance.
Patent TW-I276879-B (TW)
Title: Method for making glass structures for flat panel displays
Inventor: THEMONT JEAN-PIERRE
IPC: G02F1/1333
Filed: 2000-01-25
Granted: 2007-03-21
Abstract: An assembly of rib structures sandwiched between a dielectric glass layer and a glass substrate for use in flat panel display, such as plasma addressed liquid crystal (PALC) displays, is formed by a number of methods. One method includes molding thermoplastic glass frit containing paste into rib structures, transferring the rib structures to a thin transparent layer of a thermoplastic dielectric glass frit containing composition on a drum, and transferring the rib structures with the thin transparent dielectric glass layer to a glass substrate having metallic electrodes already formed thereon.
Patent TW-473996-B (TW)
Title: Semiconductor device and method for manufacturing the same
Inventor: IWASA SHINYA
IPC: H01L27/108
Filed: 2000-02-15
Granted: 2002-01-21
Abstract: A semiconductor device has such a configuration that a contact hole is formed in a fourth inter-layer insulator film which covers an upper electrode of a capacitor, to expose part of the upper electrode; and below the contact hole, a trench covered by a capacitive insulator film formed in a trench is formed larger than the contact hole in width, to have therein a polycrystalline silicon film which constitutes the upper electrode.
Patent TW-554063-B (TW)
Title: Chemical vapor deposition system and method
Inventor: BAILEY ROBERT JEFFREY
IPC: B05D3/10
Filed: 2000-03-13
Granted: 2003-09-21
Abstract: A chemical vapor deposition (CVD) system is provided for processing a substrate 110. The system 100 includes a heated muffle 115, a chamber 120 having an injector assembly 130 for introducing chemical vapor to process the substrate 110, and a belt 105 for moving the substrate through the muffle and chamber. The belt 105 has an oxidation-resistant coating 175 to reduce formation of deposits thereon. The coating 175 is particularly useful for resisting formation of chromium oxides on belts made from a chromium-containing alloy. In one embodiment, the oxidation-resistant coating 175 comprises a securely-adhered oxide layer 185 that is substantially free of transition metals. Preferably, the oxidation-resistant coating 175 comprises aluminum oxide. More preferably, the coating 175 comprises an aluminum oxide layer 185 securely adhered over a nickel aluminide layer 180.
Patent TW-473777-B (TW)
Title: Semiconductor device and method for manufacturing the same
Inventor: KAJITA AKIHIRO
IPC: H01L21/301
Filed: 2000-05-24
Granted: 2002-01-21
Abstract: This invention provides manufacture method of semiconductor device with copper wire, which prevents cracking during dicing and inhibits copper diffusion. A semiconductor comprising a semiconductor device formed on a semiconductor device circuit area R1 of a silicon semiconductor substrate 11, an inter-level insulating film 20 formed on the silicon semiconductor substrate 11, aluminum via plugs 18 buried in the holes in the inter-level insulating film 20, copper wiring comprising a copper film 24 and an isolation metal layer 23 formed at an inter-level insulating film and in a groove connected to the aluminum via plugs 18, and a via ring surrounding an outer periphery of a semiconductor device circuit area Pi having an inter-level layer comprising an aluminum via ring 19 and a silicon nitride layer 17 formed in the ring-shaped groove.
Patent TW-472013-B (TW)
Title: Power unit for motorcycle
Inventor: OGASAWARA ATSUSHI
IPC: B62M7/02
Filed: 2000-06-20
Granted: 2002-01-11
Abstract: To provide a power unit for a motorcycle which allows a large bank angle of a vehicle body and has a compact size. A power unit 7 for a motorcycle is located at a lower portion of a vehicle body. The axis C1 of a crankshaft 31 extending in the longitudinal direction of the vehicle body is positioned in the vicinity of a vehicle body center C0. The axis C2 of a cylinder 45 extends from the axis C1 of the crankshaft 31 in orthogonal relationship thereto and is inclined with respect to the vehicle body center C0 so as to be raised on the right side of the vehicle body. The axis C5 of a center shaft 93 of a transmission 91 in a power transmitting device 90 extends in the longitudinal direction of the vehicle body at a left upper position with respect to the axis C1 of the crankshaft 31. The front end of the center shaft 93 of the transmission 91 is positioned on the front side of the rear end of the crankshaft 31.