baber/WOPTO huggingface dataset:
Patent JP-H1088881-A (JP)
Title: Sickle lock
Inventor: TODA MITSUHARU
IPC: E05B65/08
Filed: 1996-09-11
Abstract: PROBLEM TO BE SOLVED: To prevent injuries on hands, etc., by a sickle, to lock a sickle lock at an indoor side and to provide the sickle lock capable of being fit for use as an indoor purpose. SOLUTION: An axial pin 21c as the movable fulcrum borne on a long groove 25 of a lock case 22 is formed in a sickle metal 21. The sickle metal 21 is formed in a retractable and movable manner by sliding the axial pin 21c in the long groove 25, and the axial pin 21c as the turnable fulcrum is formed in a movable manner. A sickle spring 23 against retractable movement and turning of the sickle metal 21 is provided.  An unlocking device is constituted of a sickle operation piece 46 turned by pushing the sickle metal 21 so that the sickle 21a can release the interlock with a strike, an opening and closing control mechanism 60 for stimulating the turning of the sickle metal 21 by manual operation and a transfer mechanism 40 capable of being transferred to the sickle operation piece 46 so as to make it push and operate by receiving operation for stimulating the turning of the sickle metal with the opening and closing control mechanism 60. The transfer mechanism 40 can be selected and controlled in either transfer or non-transfer.
Patent JP-H10120717-A (JP)
Title: Catalyst having middle-sized pore molecular sieve as carrier
Inventor: ROHDE WOLFGANG DR
IPC: C08F4/02
Filed: 1997-09-05
Abstract: PROBLEM TO BE SOLVED: To obtain the subject catalyst, capable of producing a polymer having a high molecular weight by using a middle-sized pore molecular sieve as a carrier. SOLUTION: This catalyst has a middle-sized molecular sieve as a carrier. Further, the molecular sieve contains oxides of elements of Si, Be, B, Al, Ga, In, etc., and/or Ce, has an aluminosilicate structure, especially a silicate structure and 1.5-25nm middle-sized pores, and contains 0.1-10wt.% chromium content. In order to obtain the catalyst, it is preferable that the middle-sized pore molecular sieve in a solvent is brought into contact with a chromium compound (e.g.; chromium oxide), then the solvent is removed and the catalyst is calcined at 400-1200 deg.C.
Patent JP-H1084985-A (JP)
Title: Production of phosphorylated oligosaccharide
Inventor: SAKAMOTO REIICHIRO
IPC: C12P19/14
Filed: 1996-09-11
Abstract: PROBLEM TO BE SOLVED: To massively and efficiently obtain the subject oligosaccharide capable of inhibiting the formation of calcium phosphate precipitates and useful for treating osteoporosis, etc., by adding heat-resistant liquid type α-amylase to a slurry containing phosphoric acid-bound starch and subsequently heating the mixture under pressurization. SOLUTION: This method for producing a phosphorylated oligosaccharide comprises degrading phosphorylated starch with an enzyme. Therein, a slurry containing the phosphorylated starch in an amount of 20-40wt.% is mixed with a heat-resistant liquid type α-amylase, and subsequently heated at a temperature of >=101 deg.C under pressurization. The obtained liquid is treated with an amylolytic enzyme such as α-amylase, β-amylase, glucoamylase, α-glucosidase, pullulanase or isoamylase and subsequently successively allowed to pass through a strong acidic cation exchange resin and an anion exchange resin. The fraction adsorbed to the anion exchange resin is eluted to massively, efficiently and profitably obtain the objective phosphorylated oligosaccharide having an action to inhibit the formation of calcium phosphate precipitates.
Patent JP-H06192179-A (JP)
Title: Dicarboxylic ester and its production
Inventor: KIMURA YOICHI
IPC: C07C67/347
Filed: 1993-09-28
Abstract: PURPOSE:To efficiently obtain in high yield the subject compound useful for medicines or pesticides by reaction between each a specific acrylic ester and compound under basic conditions. CONSTITUTION:The objective compound of formula III can be obtained by reaction between (A) acrylic t-butyl ester of formula I and (B) a compound of formula II (R<1> is 1-6C alkyl except t-butyl; X is Cl, or Br) such as 2,2- dihalogenoacetate under basic conditions (e.g. in the presence of lithium hydroxide).
Patent JP-2001066577-A (JP)
Title: Palc display
Inventor: NAKAYAMA MITSUO
IPC: G02F1/1333
Filed: 1999-08-27
Abstract: PROBLEM TO BE SOLVED: To increase the viewing angle in the lateral direction by disposing an incident polarizing plate between a plasma cell part and a back light part with the direction of the polarization axis of the polarizing plate aligned parallel to the direction of the plasma rib. SOLUTION: An incident polarizing plate 5 is disposed between a plasma cell part 4 and a back light part 2 with the direction of the polarizing axis of the polarizing plate 5 aligned parallel to the direction of the plasma rib 7. The PALC display consists of a display part 1 and the back light part 2, and the display part 1 further consists of a liquid crystal cell part 3 and the plasma cell part 4. The plasma cell part 4 has a function of a TFT in a conventional TFT liquid crystal display device, and the incident polarizing plate 5 has a function to convert the random light emitted from the light source 16 of the back light part 2 into linearly polarized light. When the polarization axis of the incident polarizing plate 5 is parallel to the plasma rib 7, the viewing angle in the lateral is increased while the viewing angle in the vertical direction is decreased, which is a preferable characteristics as a large-screen display.
Patent JP-H1182300-A (JP)
Title: Variable delivery compressor
Inventor: TAGUCHI YUKIHIKO
IPC: F04B27/18
Filed: 1997-09-05
Abstract: PROBLEM TO BE SOLVED: To provide desired cooling performance at the starting time of a compressor. SOLUTION: This variable delivery compressor changes the inclination angle of a swash plate 5 according to a difference in pressure between a crank chamber 3 and a suction chamber 13 to change a piston stroke and control delivery capacity. A delivery chamber 14 and the crank chamber communicate with each other through a first communicating passage 18, so that the first communicating passage is controlled so as to be opened and closed by a pressure control valve 19. The crank chamber 3 and the suction chamber 13 communicate with each other through a second communicating passage 20. A valve element 21 is disposed at the second communicating passage 20. If a difference in pressure between the delivery chamber 14 and the suction chamber 13 is below a prescribed value, the valve element fully-closes the second communicating passage by the energizing force of a spring 22.
Patent JP-H0290548-A (JP)
Title: Formation of semiconductor integrated circuit device
Inventor: NOMOTO KAZUYUKI
IPC: H01L27/04
Filed: 1988-09-28
Abstract: PURPOSE:To reduce lower cells as a commonness between a pre-treatment and a post-treatment is secured by a method wherein a compaction treatment is performed on the patterns, on which the patterns of upper wirings are synthesized, of the lower cells. CONSTITUTION:A position, where a plurality of pieces of lower cells 2 arranged in a semiconductor integrated circuit device (LSI) 1 are used in common, is specified and the positions of these cells 2 are stored. Then, the patterns of upper wirings 3, which intrude within the ranges of the cells 2 and do not belong to the cells 2, are cut out at ranges 2' of the cells 2 and the positions of these ranges 2' are recorded. Then, the patterns, which are cut out at the ranges 2', of the wirings 3 are superposed on the patterns of the cells 2 and a synthetic treatment of the respective patterns is performed. Then, a compaction treatment is performed on the patterns, on which the patterns of the wirings 3 are synthesized, of the cells 2 and the pattern of a lower cell 20 and the pattern of an upper wiring 30 are isolated from each other in every wiring position in the device 1 at a range 20' that the pattern of the upper wiring 30 is cut out from the pattern, on which a compaction treatment is performed and which is synthesized, of the lower cell 20.
Patent JP-H0290807-A (JP)
Title: Semiconductor integrated circuit device
Inventor: MATSUMOTO MASAAKI
IPC: H03M5/06
Filed: 1988-09-28
Abstract: PURPOSE:To stabilize the action of a flip flop circuit by setting the size of the MOSFET of an input transmission gate which transmits an input signal larger than that of MOSFET constituting a corresponding holding transmission gate. CONSTITUTION:The flip flop circuit FFI included in a CMI(Coded Mark Inversion) CODEC included in an optical communication system is constituted by including two Bi.COMS inverter circuits BCN1 and BCN2 which are crossed and connected through a transmission gate TG2. The size of MOSFET constituting the input transmission gate is made larger compared to that of MOSFET constituting the holding transmission gate. Thus, the action of the flip flop circuit in a high frequency area can be stabilized, because the transmission characteristic of the flip flop circuit can be improved at a prescribed rate.
Patent JP-H03102033-A (JP)
Title: Automatic paper sheet feeder
Inventor: KIYOHARA TAKEHIKO
IPC: B65H1/04
Filed: 1989-09-18
Abstract: PURPOSE:To secure a smooth paper sheet feeding even if the width of a recording sheet changes by securing a quasi-roller to a rotary shaft of a paper sheet feed roller which quasi-roller has a profile approximately same with that of the paper sheet feed roller and rotates with slippage relative to the recording sheet so that an appropriate range from a separation claw is pressed. CONSTITUTION:A pair of quasi-rollers 103, 103 are secured on both outer sides of paper sheet feed rollers 41, 41 of a paper sheet feed roller shaft 97. Although these quasi-rollers 103, 103 have the same profile with the paper sheet feed rollers 41, 41, they are of different material and width, have a small frictional force between a recording sheet, and substantially produce no feeding force at the time of paper sheet feed while in sliding contact with the sheet. Both or either one of the quasi-rollers 103, 103 are located at positions where the distances S, S between separating claws 75, 76 located outside the quasi-rollers fall within a suitable range (or value) for the separating function when large sized or medium sized recording sheet 13B is loaded.
Patent JP-H0665862-A (JP)
Title: Production of water absorbing cellulosic fiber
Inventor: INAGAKI HIROSHI
IPC: D06M101/08
Filed: 1992-08-19
Abstract: PURPOSE:To provide a method for treating the interior of a cellulosic fiber so as to have water absorbing property without impairing handle of the cellulosic fiber. CONSTITUTION:An alkali cellulose is immersed in an acid bath to neutralize only surface of the fiber and then immersed in an aqueous solution of monochloroacetic acid or its salt and heat-cured to subject an alkali cellulose part of the interior of the fiber to carboxymethylation. Thereby, the objective cellulosic fiber having 0.01-0.5 substitution degree of carboxymethyl group and 45-100% water absorption is obtained.
Patent JP-S6484237-A (JP)
Title: Mirror box mechanism for camera
Inventor: YAMAMOTO MASARU
IPC: G03B9/02
Filed: 1987-09-26
Abstract: PURPOSE:To perform the independent operation of a diaphragm driving system and a mirror and shutter charge system arbitrarily and at need by controlling and driving them by separate systems by a CPU. CONSTITUTION:An independent and appropriate motor 10 is provided separately from a diaphragm mechanism, and the motor transmits rotation to a worm gear 11 and gears 12 and 13, and supplies the rotation in a direction of arrow head simultaneously to gears 14 and 15. And the motor 10 starts the rotation after operating a shutter by the command of the CPU in a camera. Thereby, a mirror starts to descend according to the recovery correction of a spring 24 since it passes the most projecting position of a cam 16. At a time when the mirror descends and charge is completed after a cam 17 is moved to the most ascending position, the mirror stops automatically and returns to an initial state by detecting the number of count of encoders 26 and 27, and a diaphragm supplies a reverse pulse current at an arbitrary time after the shutter being operated, and an operation is completed by returning the diaphragm to a releasing position. In such a way, the diaphragm and the mirror can be driven independently.
Patent JP-S6482096-A (JP)
Title: Drive circuit for thin film el display device
Inventor: FUJIOKA YOSHIHIDE
IPC: G09G3/20
Filed: 1987-09-25
Abstract: PURPOSE: To reduce the power consumption for write driving by discharging some of electric charges, charged in the device, to an external capacitor at discharging time, and reusing them for next driving. CONSTITUTION: Switching circuits 200 and 100 selectively apply a plus/minus write voltage or 0V to pull-up/down common lines HVcc and FG of high dielectric strength driver ICs 20 and 30 connected to a scanning-side electrode Yi of the thin film electroluminescence(EL) device 10. A switching circuit controlled by a logic circuit 41 applies a modulation voltage to the pull-up common line of a high dielectric strength driver IC 40 connected to a data side electrode Xi and the pull-down common line is discharged to 0V, so that the device 10 is applied with AC pulses to emit light. After the light emission, electric charges accumulated in the EL layer are accumulated in the capacitor Cm of the switching circuit 300 through pull-down side transistors DT1-DTn and reused for next light emission. The driving electric power of the device is reducible.
Patent JP-H04122787-A (JP)
Title: Blue light emitting substance
Inventor: ADACHI GINYA
IPC: H01J29/20
Filed: 1990-09-12
Abstract: PURPOSE:To obtain a blue light emitting substance which has improved luminous intensity and can control deterioration with time by enclosing Eu(II) and Zn ions in a poly(meth)acryloyloxyalkyl crown ether. CONSTITUTION:Eu(II) and Zn ions are enclosed in a poly(meth)acryloyloxyalkyl crown ether [the crown compound is preferably 15-crown-5, and the mixing ratio of the crown compound to the monomer is (1:3) to (1:20), preferably (1:5) to (1:15)] to give a blue light emitting substance. It is desirable that the molar ratio of Eu(II) to Zn ions to be enclosed ranges from (1:1) to (1:50) and the concentration of Eu(II) is 0.05-5.0wt.%.
Patent JP-H0289308-A (JP)
Title: Formation of aluminium diffusion layer of silicon substrate
Inventor: SATO NORITADA
IPC: H01L21/22
Filed: 1988-09-27
Abstract: PURPOSE:To obtain an even optimal diffusion layer with good reproducibility without forming an aluminium attachment layer by using a prescribed condition at the time of sputtering aluminium on a silicon layer. CONSTITUTION:As to a sputtering condition for forming an infiltration layer of aluminium on a silicon substrate 3, a desirable temperature shall be 150 to 200 deg.C for holding a fixed temperature because the temperature of this substrate rises during glow discharge. An atmosphere inside a reaction tank shall be argon and proper pressure at the time of glow discharge is in the range of 0.01 to 0.5Torr. It is because that discharge becomes hard under 0.01Torr and requires a higher voltage device while a current is concentrated on an uneven part of the electrode surface above 0.05Torr to cause a flow of an abnomal current in which the electrode may start to be partially melted. Proper discharge voltage shall be 800 to 1000V per distance 50mm between the electrodes 2a and 2b. It is because that an aluminium attachment layer comes to be formed on the silicon substrate surface under 800V while high voltage is produced above 1000V so that dielectric strength comes into question.
Patent JP-S61120497-A (JP)
Inventor: TAKETOMI TAKESHI
IPC: H05K1/14
Filed: 1984-11-16
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。
Patent JP-H0992716-A (JP)
Title: Non-single crystal semiconductor device and fabrication thereof
Inventor: GOTO YASUMASA
IPC: H01L21/768
Filed: 1995-09-21
Abstract: PROBLEM TO BE SOLVED: To ensure good electrical connection by removing a deteriorated layer on the surface of a thin non-single crystal semiconductor by etching and then connecting the surface of a thin non-single crystal semiconductor with a conductive material. SOLUTION: PH3 gas is decomposed by means of plasma and hydrogen and P are injected with high concentration into a polysilicon 1 while accelerating at a rate of 3×10<16> atm/cm<2> . The surface of polysilicon 2 is then etched in order to improve the surface homology of the polysilicon 3. Etching is performed at 400W for 1min using CDE. The polysilicon to be etched has the mean grain size of 500-800μm. The polysilicon 3 is the applied with a conductive material, e.g. Al 4. This structure ensures good electrical connection of a non-single crystal semiconductor layer and the conductive material. Adhesion is also enhanced between the non-single crystal semiconductor layer and the conductive material.
Patent JP-S59135638-A (JP)
Inventor: HERARUDOUSU RUSHIEN MACHIRUDOU
IPC: G11B7/08
Filed: 1983-12-23
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。
Patent JP-H0696737-A (JP)
Title: High pressure discharge lamp
Inventor: ITO AKIRA
IPC: H01J61/54
Filed: 1992-09-10
Abstract: PURPOSE:To provide a high pressure discharge lamp, which can be re-started instantaneously. CONSTITUTION:An electronic starting circuit 20, which utilizes an external mercury lamp stabilizer 22 to selectively light up light emitting tubes 3a, 3b and which is operated at a voltage higher than the lamp operating voltage and in which a non-linear capacitor 17 and a two-way thyristor 18 are connected in series, is provided inside of a base 2 of an external tube 1a. In the case where one light emitting tube becomes hard to emit the light, the other light emitting tube is re-started instantaneously with the operation of this electronic starting circuit 20 independently of the heat of the light emitting tubes 3a, 3b.
Patent JP-S6489950-A (JP)
Title: Motor
Inventor: IRIE SHINICHIRO
IPC: H02K41/06
Filed: 1987-09-29
Abstract: PURPOSE:To prevent slipping from being generated, by a method wherein a steel sheet composing a stator is press-formed, and wherein a first gear is punch- formed on the inner diameter side, and wherein a second gear fitted on the first gear is punch-formed on a steel sheet composing a rotor. CONSTITUTION:A stator 4 forming a first gear 3 on the inner diameter side is set, and a rotor 6 forming a second gear 5 on the outer diameter side so that the rotor may be rotated along the inner diameter of the stator 4 is set. Then, the rotor 6 and the stator 4 are fitted on each other and do not slip together, and on the rotor 6, low-speed-rotational high torque is obtained. Then, the first gear 3 and the second gear 5 are respectively punch-formed on steel sheets for forming the stator 4 and the rotor 6, and a fitted unit is not required to be set on an external section.
Patent JP-S60132727-A (JP)
Title: Method for adjusting thickness of plastic film and the like
Inventor: IGUCHI KATSUHIRO
IPC: B29C48/08
Filed: 1983-12-22
Abstract: PURPOSE:To adjust a lip gap with good accuracy, by measuring the thickness of a film during molding in a transverse direction and determining the operation amount of each bolt from the bending change amount of a slide lip, the load change amount of a die bolt and the spring constant of a bolt single body. CONSTITUTION:The thickness of a running sheet 22 is measured over a transverse direction by a thickness measuring apparatus 25 and the amount of a lip gap changed from the deviation ei with an objective value ti is determined by a comparator 29. The change amounts of each die bolt at plural predetermined places are calculated along with proportion constant set to a spring constant setting part 28b by an operation part 30 and a bending change amount epsiloni is calculated by an operation part 31 while each operation amount of the die bolt is calculated by a die bolt operation amount operating part 32. These calculated values are fed back to the drive part of the die blot 21b through a power control unit 35.
Patent JP-H1093090-A (JP)
Title: Semiconductor device, its manufacture, and organic resin substrate for semiconductor device
Inventor: YAMADA HIROSAKU
IPC: G02F1/136
Filed: 1996-09-13
Abstract: PROBLEM TO BE SOLVED: To enable forming a coating, having a sufficient barrierability, even if a general resin material is used, by forming a semiconductor film in which an active layer for a semiconductor device has been formed, on an inorganic insulating film containing specified impurities on an organic resin substrate. SOLUTION: An acrylic resin substrate containing Na being an alkaline metal of a sufficient concentration is used. First, SiO2 2 of 30nm is deposited on a substrate 1 by 100 deg.C plasma CVD, using SiH4 and N2 O as materials. The formation condition is 120 deg.C. Following this, this substrate 1 is dipped in a 5% NaCl aqueous solution 3, put in a glass container 5 for 48 hours, is washed simply after that, and is dried subsequently to form a plastic substrate sufficiently polluted by Na. An SiO2 film 4 is deposited by 200nm with CVD, similarly to the SiO2 2 forming process. Next, As ions are used and implanted to a specified concentration with an acceleration energy of 40keV, it is possible to obtain a blocking ability with respect to alkaline metals by this coating.
Patent JP-S6484229-A (JP)
Title: Thin film transistor
Inventor: NAKAMURA TAKEHIRO
IPC: G02F1/136
Filed: 1987-09-28
Abstract: PURPOSE:To surely insulate between a gate electrode film and another electrode film without generating characteristic change by constituting a first insulating film of an oxide film in which metal consisting the gate electrode film is plasma-oxidized. CONSTITUTION:The gate electrode film 1 is formed on a substrate 7, and a source electrode film 2 and a drain electrode film 3 are formed on the gate electrode film 1 via an insulating film. The insulating film is formed in the double structure of the first insulating film 4 which covers the gate electrode film 1 directly and a second insulating film 5 formed on the first insulating film 4. And the first insulating film 4 is constituted of the oxide film by plasma oxidation. In other words, since the plasma oxidation is performed in a vacuum vessel by using an oxygen with high purity, the invasion of impurity in the oxide film can be prevented from being generated. In such a way, it is possible to prevent the characteristic change in a transistor from being generated and to maintain insulation between the gate electrode film 1 and other electrode films 2 and 3 surely by the insulating films 4 and 5 of two, first and second, layers.
Patent JP-S6483376-A (JP)
Title: Method for operating plasma torch
Inventor: YAMAGUCHI YOSHIHIRO
IPC: B23K9/00
Filed: 1987-09-28
Abstract: PURPOSE:To prevent electrodes from burning and consumption by providing a changeover switch to a power source and applying inert gas and the nontransferred mode at the time of starting operation and at the time of stopping it for a time and changing over these to active gas and the transferred mode at the time of cutting work. CONSTITUTION:An intermediate electrode 3 is provided with respect to a bar- shaped electrode 2 of a plasma torch 1 to demarcate a first gas channel 10. Further, a cylindrical outer electrode 4 to form a second gas channel is arranged to the outside of the electrode 3. At the time of starting the plasma torch 1, the voltage is impressed between the electrodes 2 and 4 via the changeover switch 101 and a pilot arc and a main arc are ignited in order by the inert gas and the nontransferred more. At the time of the cutting work, plasma working is performed by the active gas and transferred mode. At the time of starting and at the time of stopping for a time, since both the negative electrode 2 and the positive electrode 4 are in the inert gas, the electrodes 2 and 4 are prevented from burning and being consumed.