baber/WOPTO huggingface dataset:
Patent TW-452939-B (TW)
Title: Method and apparatus for elimination of parasitic bipolar action in complementary metal oxide semiconductor (CMOS) silicon on insulator (SOI ) circuits
Inventor: STORINO SALVATORE N
IPC: H01L21/8238
Filed: 2000-01-07
Granted: 2001-09-01
Abstract: The present invention is an apparatus and method for eliminating parasitic bipolar transistor action in a Silicon on Insulator (SOI) metal oxide semiconductor (MOS) device. In accordance with the invention a SOI electronic device and an active discharging device coupled to said SOI electronic device is provided to deactivate the parasitic bipolar transistor. The parasitic bipolar transistor action is deactivated by controlling the conduction of an active discharging device, said active discharging device being coupled to said SOI device. The present invention is also an apparatus and method to overcome the unwanted effects of parasitic bipolar discharge in silicon-on-insulator (SOI) field effect transistors (FET) by expanding a stack SOI MOS devices arranged to provide a predetermined logic function. The SOI MOS devices are arranged so as to eliminate electrical connections between certain intermediate nodes of the dynamic logic circuit. Accordingly, eliminating any parasitic bipolar current leakage paths associated with such electrical connections between certain intermediate nodes of said stacked SOI MOS devices of said dynamic circuit. The present invention is also an apparatus and method to overcome the unwanted effects of parasitic bipolar discharge in silicon-on-insulator (SOI) field effect transistors (FET) by eliminating the effects the sneak current discharging path by applying a contention free arrangement methodology to realize the dynamic logic circuit. The SOI MOS devices are arranged so as to eliminate the effects of electrical connections between certain intermediate nodes of the dynamic logic circuit. Accordingly, eliminating any parasitic bipolar current leakage paths associated with such electrical connections between certain intermediate nodes of said stacked SOI MOS devices of said dynamic circuit.
Patent TW-442874-B (TW)
Title: Semiconductor device
Inventor: OTSUKI KAZUTAKA
IPC: H01L23/485
Filed: 2000-03-10
Granted: 2001-06-23
Abstract: A polycide film is selectively formed in a bonding area of a silicon substrate. A BPSG film is formed as an interlayer insulating film comprising boron. Many contact holes are made, on the polycide film, in the BPSG film. Tungsten plugs are embedded in the contact holes. A film of titanium and a titanium compound is formed between the tungsten plugs and the aluminum film, and the BPSG film and the polycide film.
Patent TW-446559-B (TW)
Title: Portable cardiopulmonary resuscitation aid with accurate compression
Inventor: YOUNG CHARLES
IPC: A61H31/00
Filed: 2000-03-15
Granted: 2001-07-21
Abstract: A portable cardiopulmonary resuscitation aid with accurate compression comprises combining a frame body with a pressurization mechanism. The pressurization mechanism combines with a link through a handle. The link combines with a coupling seat, and is installed on the coupling seat by an adjustment pin. The adjustment pin is movably combined with a positioning block. One side of the positioning block is at least installed with a movable sleeve. The movable sleeve joins with a fastening frame, which is correspondingly installed vertically to the frame body. The lower end of the adjustment pin combines with a press plate. Another end of the coupling seat combines with another link, and joins with the frame body. A rescuer can sit on the two sitting rods installed on the frame body, and use the weight of the rescuer to counteract the reacting force generated during contraction of the cardiopulmonary resuscitation aid without the need of using a thick and heavy leg table. A bottom plate is installed for fastening the frame body, and can be fastened to the pushcart of a first aid stretcher. A cardiopulmonary resuscitation can be performed in an ambulance, thereby achieving simple operation and accurate compression without the need of a professional staff to operate the machine. Meanwhile, a first aid can be performed in an ambulance. Furthermore, the cardiopulmonary resuscitation aid is portable and has a reduced cost, and is suitable for various types of cardiopulmonary resuscitation.
Patent TW-463212-B (TW)
Title: Method for reducing topography dependent charging effects in a plasma enhanced semiconductor wafer processing system
Inventor: YAMARTINO JOHN M
IPC: H01J37/32
Filed: 2000-04-25
Granted: 2001-11-11
Abstract: A method of eliminating charging resulting from plasma processing a semiconductor wafer comprising the steps of plasma processing the semiconductor wafer in a manner that may result in topographically dependent charging and exposing, during at least a portion of a time in which the semiconductor wafer is being plasma processed, the semiconductor wafer to particles that remove charge from the semiconductor wafer and reduce topographically dependent charging.
Patent TW-463214-B (TW)
Title: UV-enhanced activation of a doping agent in compound semiconductors by means of rapid thermal process systems
Inventor: DRECHSLER MARTIN
IPC: H01L33/32
Filed: 2000-05-05
Granted: 2001-11-11
Abstract: This invention provides a UV- enhanced activation of a doping agent in compound semiconductors by means of rapid thermal process systems. A method for thermal treatment of at least one layer, preferably consisting of compound semiconductors, whereby hydrogen-passivated impurity atoms in the layer are activated. According to the inventive method, a layer is heated during a time period of less than 120 seconds to a temperature T2 which is higher than the first temperature (T1) to decrease specific layer resistance. At least one layer is heated during the first time period to a second temperature (T2) which is higher than the first temperature for up to 60 seconds. Charge carriers are produced inside the layer during the course of the inventive method by means of electromagnetic radiation during at least one third time period.
Patent TW-457152-B (TW)
Title: Constant length cutting method and apparatus for heat sink materials
Inventor: TSUNE YOSHITAKA
IPC: B23D47/04
Filed: 2000-05-15
Granted: 2001-10-01
Abstract: The present invention provides a cutting method to cut the substrate (1) of the heat sink materials (M) rapidly to the product of cooling fins (m) by the specified length. The stopper (6) moves from the front of the cutting position (CP) of the heat sink materials across the datum of the cutting position (CP) and stops on the root of the heat sink fins (2a) of the front group of heat sink fins (3) to define the standard length Α of the front heat sink fins on the substrate (1). The propeller (7) drives the heat sink materials (M) to make the stopper (6) stop on the root of the front heat sink fins (2a). First, make the stopper (6) locate at the datum and stop on the root of the heat sink fins (2a) of the front group of heat sink fins (3) by the propeller (7), and then cut off the front heat sink fins (2a). After that, move the heat sink materials by the defined length and cut off the back heat sink fins (2b). Repeat the above procedures.
Patent TW-478088-B (TW)
Title: Semiconductor substrate registration apparatus and method
Inventor: YAMAGISHI TAKAYUKI
IPC: H01L21/68
Filed: 2000-06-23
Granted: 2002-03-01
Abstract: The present invention provides a semiconductor substrate registration aligning apparatus and method without contaminating backside surface. The solution of registration apparatus for arbitrarily registering the circular semiconductor substrate having a notch or orientation flap at an edge portion in the present invention includes: at least three spindle means rotatably axially supported by a plate, a holding means for holding the advanced semiconductor device attached to the spindle means, a rotation mechanism for rotating the spindle means, and a sensor for detecting the notch or orientation flap. An edge portion of the semiconductor substrate is brought into contact with the respective holding means and held. When the spindle means rotates, the semiconductor substrate held by the holding means is rotated around its axial line.
Patent TW-476142-B (TW)
Title: Method of dicing semiconductor wafer into chips, and structure of groove formed in dicing area
Inventor: ARIMA TAKAHISA
IPC: H01L21/78
Filed: 2000-07-28
Granted: 2002-02-11
Abstract: A method for dicing a semiconductor wafer into chips is provided, in which the peeling-off of a hard protective film on the surface of a semiconductor substrate can be avoided. Two parallel grooves are formed at a dicing area around a chip by an etching process. Then, SiO2 film is deposited on the GaAs substrate as a protective film. At this time, a bending portion at the interface between the protective films on the inner surface of the groove and the surface of the substrate. When the part between two grooves is cut by a dicing blade, a stress to the protective film caused by the edge of the blade is concentrated to the bending portion, resulting in a crack along the bending portion.
Patent TW-474024-B (TW)
Title: Passivation of GaN based FETs
Inventor: GREEN BRUCE MCRAE
IPC: H01L21/285
Filed: 2000-08-05
Granted: 2002-01-21
Abstract: Surface passivation of GaN based FETs, including undoped AlGaN/GaN HEMTs and MISFETs, and doped GaN MESFETS, reduces or eliminates the surface effects responsible for limiting both the RF current and breakdown voltages of the devices. Passivation is provided through deposition of a layer made of a dielectric, such as silicon nitride, silicon dioxide or polyimide, on a barrier layer in which a transistor channel region is formed.
Patent TW-I225172-B (TW)
Title: Defect repair method of liquid crystal display and structure thereof
Inventor: HONG HONG-JYE
IPC: G02F1/13
Filed: 2000-08-17
Granted: 2004-12-11
Abstract: The present invention relates to a defect repair method of liquid crystal display and a structure thereof for application in the manufacturing of an LCD including a rectangular pixel array formed by the interlacement of multiple scan lines and multiple data lines. The defect repair method includes the following steps: (1) provide a repair line segment outside only one side of the rectangular pixel array, (2) apply a first laser beam to weld not only a first intersection between a defective data line or scan line and the repair line segment, but also a second intersection between a normal data line or scan line adjacent to the defective data line or scan line and the repair line segment for electric connection, and (3) apply a second laser beam to cut a first cut point and a second cut point on the repair line segment for open circuit, wherein the two cut points are located at the two sides of the segment formed by the first intersection and the second intersection, respectively.
Patent TW-455658-B (TW)
Title: Liquid flow control valve
Inventor: KHOO KAH HIN
IPC: F16K31/34
Filed: 2000-09-16
Granted: 2001-09-21
Abstract: A liquid flow control valve comprising a casing and a sealing member within the casing, wherein the sealing member divides the casing into a first chamber and a second chamber, wherein the sealing member provides for restricted liquid flow from the first to the second chamber, the casing including a liquid inlet port which opens into the first chamber and a liquid outlet port, a valve operating member in the second chamber and operable on the sealing member and co-operable therewith to seal the outlet port, wherein the valve operating member is operable by liquid pressure due to liquid which flows into the second chamber from the first chamber via the sealing member to initially co-operate with the sealing member to substantially prevent liquid flow from the second chamber through the outlet port via the sealing member, and subsequently to co-operate with the sealing member to seal the outlet port, wherein the operating member is externally actuable to break the seal for liquid to flow from the first and second chambers through the outlet port and is released upon removal of the external actuation for operation by said liquid pressure, wherein the restricted liquid flow into the second chamber and the pressure thereof relative to liquid pressures at the outlet port provides for controlled closure of the valve.
Patent TW-473789-B (TW)
Title: Processing apparatus
Inventor: SAITO MASASHI
IPC: B44C1/22
Filed: 2000-10-13
Granted: 2002-01-21
Abstract: In order to facilitate control of a circulating gas, in a processing apparatus 100 having a showerhead 200 for supplying a processing gas into a processing chamber via a plurality of gas supply holes, a turbo pump 120 for evacuating the processing gas from the processing chamber 110 and a circulating gas piping 150 for returning at least a portion (circulating gas Q2) of the exhaust gas evacuated from the processing chamber by the turbo pump to the showerhead, the showerhead is provided with a primary gas supply system that supplies a primary gas Q1 supplied from a gas source 140 into the processing chamber via a plurality of primary gas outlet holes h1 and a circulating gas supply system that supplies the circulating gas into the processing chamber via a plurality of circulating gas supply holes h2, with the primary gas supply system and the circulating gas supply system constituted as systems independent of each other. Since the primary gas and the circulating gas are allowed to become mixed only in the processing chamber, the circulating gas can be controlled with a greater degree of ease without having to implement pressure control.
Patent TW-502510-B (TW)
Title: High-throughput, low-latency next generation internet networks using optical label switching and high-speed optical header generation, detection and reinsertion
Inventor: CHANG GEE-KUNG
IPC: H04L29/06
Filed: 2000-10-20
Granted: 2002-09-11
Abstract: An optical signaling header technique applicable to optical networks wherein packet routing information is embedded in the same channel or wavelength as the data payload so that both the single-sideband modulated header and data payload propagate through network elements with the same path and the associated delays. The header routing information has sufficiently different characteristics from the data payload so that the signaling header can be detected without being affected by the data payload, and that the signaling header can also be removed without affecting the data payload. The signal routing technique can be overlaid onto the conventional network elements in a modular manner using two types of applique modules. The first type effects header encoding and decoding at the entry and exit points of the data payload into and out of the network; the second type effects header detection at each of the network elements.
Patent TW-550310-B (TW)
Title: Porous nickel foil for alkaline battery cathode, production method therefor and production device therefor
Inventor: SHIODA TOSHIAKI
IPC: C25D1/08
Filed: 2000-11-14
Granted: 2003-09-01
Abstract: A kind of porous nickel foil for an alkaline battery cathode is disclosed, which is porous nickel foil formed by an electrolytic deposition method, having a thickness of 10-35 mum and a Vickers hardness of 70-130, the porous nickel foil formed by an electrolytic deposition being softened/annealed to the above hardness. A porous drum for a cathode to be used in an electrolytic deposition method, is characterized in that a ratio (L/D) of depth L to diameter D of its hole is at least 1, and no clearance, into which deposited metal otherwise cuts in a wedge shape, exists at the boundary between an insulating resin filled into the hole and the upper end edge of the hole. The insulating resin is preferably, for example a silicone resin, that does not separate from the inner wall of the hole by shrinkage at curing.
Patent TW-480324-B (TW)
Title: Flow passage structure of gas switch
Inventor: CHEN JIUN-NIAN
IPC: F23N5/24
Filed: 2000-12-16
Granted: 2002-03-21
Abstract: This invention relates to a flow passage structure of a gas switch, which comprises a body defining an axial chamber in the body of the switch. The chamber is in communication with an air intake, a group of inner ring holes, a group of alien ring holes and a pilot fire hole for accommodating a plug in the chamber with an alien ring venthole, an inner ring venthole and a connection slot of the plug respectively located in the same radial planes as those of the alien ring holes, the inner ring holes and the pilot fire hole of the body whereby when the plug is rotated 90 degrees to light, only the inner ring venthole of the plug supplies gas to the furnace for burning so as to reduce leakage of gas in an abnormal lighting operation and thus avoid gas poisoning. By further rotating to 160 degrees after lighting the inner ring fire, the inner ring fire ignites the alien ring fire and the inner ring fire itself will be turned down to the smallest fire first and then the inner ring and the alien ring synchronously and gradually change from small fire to big fire.
Patent TW-I264424-B (TW)
Title: Tuned sealing material
Inventor: KRUPETSKY DMITRIY
IPC: H01J29/86
Filed: 2001-06-22
Granted: 2006-10-21
Abstract: A tuned sealing material and a method for attaching a first surface to a second surface using the tuned sealing material are disclosed. In one embodiment, the present invention applies a tuned sealing material between a first surface and a second surface. In this embodiment, the tuned sealing material is comprised of a combination of a filler material and a glass material. Furthermore, in this embodiment, the filler material is tuned to absorb electromagnetic radiation of a selected frequency. Next, in the present embodiment, the tuned sealing material is subjected to the electromagnetic radiation of the selected frequency. As a result of tuning the filler material, the tuned sealing material absorbs the electromagnetic radiation of the selected frequency. After absorbing the electromagnetic radiation of the desired frequency, the tuned sealing material is used to attach the first surface and the second surface.
Patent TW-511035-B (TW)
Title: Method for reducing processor interrupt load
Inventor: KARLSSON MARCUS
IPC: G06F13/24
Filed: 2001-02-02
Granted: 2002-11-21
Abstract: A method for reducing interrupt load in a multi-processor system is disclosed, whereby two central processors executing a real-time operating system can communicate with each other using a shared memory. A start pointer and end pointer are implemented preferably in logic. By detecting a difference in the logic values for the two pointers, the receiving CPU will receive interrupts only when new data from the sending CPU has arrived in the shared memory and the shared memory was empty. Consequently, the operating system will not be disturbed with unnecessary interruptions, and the interrupt load will thus be low.
Patent TW-538086-B (TW)
Title: Autoclavable non-adherent, heat sealable polymer blends for fabricating monolayer and multiple layered films
Inventor: WOO LECON
IPC: C08L23/26
Filed: 2001-03-14
Granted: 2003-06-21
Abstract: The present invention provides a polymer blend for fabricating monolayer films or a layer within a multilayer film. The blend has a first component and a second component. The first component is selected from the group of: (1) an ethylene and alpha-olefin copolymer having a density of less than about 0.915 g/cc, (2) lower alkyl acrylates, (3) lower alkyl substituted alkyl acrylates and (4) ionomers. The first component should be present in an amount from about 99% to about 55% by weight of the blend. The second component in an amount by weight of the blend from 45% to about 1% and consists of one or more polymers of the group: (1) propylene containing polymers, (2) polybutene polymers, (3) polymethylpentene polymers, (4) cyclic olefin containing polymers and (5) bridged polycyclic hydrocarbon containing polymers. When the blend is fabricated into a film it has a modulus of elasticity when measured in accordance with ASTM D882 of less than about 60,000 psi, an internal haze when measured in accordance with ASTM D1003 of less than about 25%, an internal adhesion ranking of greater than about two, a sample creep at 120 DEG C under 27 psi loading of less than or equal to 150% for a film having a thickness from about 5 mils to about 15 mils, and the film being capable or being heat sealed into a container having seals wherein the seals remain intact when the container is autoclaved at 121 DEG C for one hour.
Patent TW-504804-B (TW)
Title: Semiconductor device and process of production of same
Inventor: HORIUCHI MICHIO
IPC: H01L23/498
Filed: 2001-03-23
Granted: 2002-10-01
Abstract: A semiconductor device, in particular a thin semiconductor package, which reduces and simultaneously achieves a uniform mounting height, does not require complicated steps for mounting individual chips, improves the manufacturing yield, achieves a uniform height of the semiconductor device without being affected by the variation in thickness of the chip, and enables execution of an electrical test all together, and a process for production of the same, wherein a semiconductor is mounted, with its back surface exposed upward, on the top surface of an insulating tape substrate having through holes in the thickness direction, the area around the side surfaces of the semiconductor element is sealed by a sealing resin layer, metal interconnections formed on the bottom surface of the tape substrate define the bottom portions of the through holes of the tape substrate, a solder resist layer having through holes in the thickness direction covers the bottom surface of the metal interconnections and the tape substrate, connection terminals extending downward from the active surface of the semiconductor element are inserted into the through holes of the tape substrate, a filler comprised of a conductive material fills the gaps between the connection terminals and the through holes of the tape substrate, and the connection terminals and the metal interconnections are electrically connected.
Patent TW-486569-B (TW)
Title: Current measuring apparatus for battery
Inventor: BATSON DAVID C
IPC: G01R31/26
Filed: 2001-04-04
Granted: 2002-05-11
Abstract: An apparatus for measuring electrical energy passing to and from a battery post. The apparatus includes a resistor having a known resistance, a first conducting surface and a second conducting surface. The conducting surfaces are arranged such that current flow from a battery post will travel through the resistor from the first conducting surface to the second conducting surface, and current flow to the post travels through the resistor from the second to the first conducting surfaces. The energy measuring apparatus further includes a first lead electrically connected to the first conducting surface of the resistor, and a second lead electrically connected to the second conducting surface of the resistor.
Patent TW-497297-B (TW)
Title: Connector frame for a high density electrical connector
Inventor: HOUTZ TIMOTHY W
IPC: H01R13/629
Filed: 2001-05-10
Granted: 2002-08-01
Abstract: A connector frame including a first component and a second component. The frame components substantially surround first and second connector halves, each half including an insulative housing and a plurality of contacts secured to the insulative housing. The frame components engage in order to progressively mate the contacts of the connector. A method of mating a connector including the steps of engaging the first and second components of the connector frame; and progressively connecting the contacts of the first and second connector halves.