baber/WOPTO huggingface dataset:
Patent TW-462129-B (TW)
Title: Method of forming a charge storage electrode having a selective hemispherical grains silicon film in a semiconductor device
Inventor: JEON KWANG-SEOK
IPC: H01L21/3065
Filed: 1999-04-20
Granted: 2001-11-01
Abstract: The present invention relates to semiconductor manufacturing field, more particularly, to a process of forming a charge storage electrode to which a selective hemispherical grains (HSG) silicon film is applied. The object of the present invention is to provide a method of forming a charge storage electrode having the selective HSG silicon film in semiconductor device which can secure a sufficient capacitor effective surface area by obtaining desired grain size at the time of selective HSG silicon film formation. The present invention prevents remaining of carbon component which obstructs the growth of HSG silicon film after dry etching process by limiting the carbon halide gas used in dry etching process of amorphous silicon film for defining the charge storage electrode at the time of process of forming the charge storage electrode having selective HSG silicon film. That is, the present invention is a technology of etching a part of amorphous silicon film by using general carbon halide gas at the time of dry etching process of the amorphous silicon film for defining the charge storage electrode, and then, finally etching the remaining part of amorphous silicon film by using silicon etching gas such as SF6 gas, Cl2+O2 gas, HBr gas, etc., not containing carbon component or only using the etching gas such as SF6 gas, Cl2+O2 gas, HBr gas, etc., not containing carbon component during selective etching of amorphous silicon film.
Patent TW-436790-B (TW)
Title: Reclaiming memory from deleted applications
Inventor: BITNER DELOY PEHRSON
IPC: G06F12/00
Filed: 1999-05-18
Granted: 2001-05-28
Abstract: The invention provides a method for removing code (applications and date) from read-only memory, and compacting the remaining code in memory either as an application is deleted or when there is not sufficient room to hold a new application. One or more ""spare"" memory segments are reserved for use during compaction. Where the code for removal shares a memory segment with other code that is not to be removed, the other code is copied to a spare memory segment, and then swapped back to its original location. The code can then be compacted to remove the ""holes"" left by the erased code.
Patent TW-426935-B (TW)
Title: Manufacturing process of salicide gate device capable of preventing the isolation oxide layer from over etching
Inventor: YU CHEN-HUA
IPC: H01L21/76
Filed: 1999-06-10
Granted: 2001-03-21
Abstract: Recently, the shallow trench isolation (STI) process is getting important in the semiconductor manufacturing technique. Particularly, as the line width of the device has entered to the era of a quarter of micron or even smaller dimension, it is used to replace the traditional LOCOS technique. However, when this isolation technique is used together with the salicide gate device technique for performing an etching process to remove the hard mask on the gate and clean the residual oxide layer on the source/drain region, the thickness of the oxide layer on the STI is usually decreased, which results in a current leakage problem. Therefore, the present invention provides an improved process for the salicide gate device, which manufactures the STI by non-doped silicon oxide layer, and forms the hard mask by silicon oxide layer doped with boron and/or phosphorous. Then, the hard mask is removed by ammonia-hydrogen peroxide mixed solution (APM). With the higher etching selectivity ratio from the two, the isolation feature of the device can be assured.
Patent TW-431094-B (TW)
Title: Memory access of Ethernet
Inventor: CHEN REN-KAI
IPC: H04L45/74
Filed: 1999-07-16
Granted: 2001-04-21
Abstract: The present invention is an Ethernet memory structure. It includes several multi-slot buckets, each corresponding to a hashing key of some bits in the medium access control (MAC) addresses. In each multi-slot bucket, a forwarding table storage position is used for storing several main contents of the forwarding table. For example: In a 4-slot bucket, if two main contents are stored in each forwarding table storage position, 1/4 of the memory spaces and approximately 1/2 of the table look-up time can be saved. Then, looking up the forwarding table of the destination medium access control (DMAC) addresses for the multi-slot buckets of the switch IC chips in Ethernet can be completed promptly.
Patent TW-513315-B (TW)
Title: Solid cosmetic composition comprising spherical powder of organopolysiloxane elastomer
Inventor: MIURA YUJIANG
IPC: A61K8/892
Filed: 1999-07-29
Granted: 2002-12-11
Abstract: The present invention provides a solid cosmetic composition having excellent property in terms of strength against impact even when the composition contains a large amount of a spherical powder of organopolysiloxane elastomer. The cosmetic composition contains a spherical powder (mean particle size: 0.1-200 μm) of organopolysiloxane elastomer having a JIS A hardness of 50-100.
Patent TW-423038-B (TW)
Title: Tape stripping apparatus and tape stripping method
Inventor: KOMA YUTAKA
IPC: H01L21/683
Filed: 1999-09-04
Granted: 2001-02-21
Abstract: There are provided a tape stripping apparatus which is simple in mechanism and can be incorporated into a grinding apparatus or the like and a tape stripping method. The tape stripping apparatus strips a protective tape, for protecting a plate-like object, which has become unnecessary after a specified operation is completed and is a thermoshrinkable tape. The tape stripping apparatus includes: holding unit for holding the plate-like object; and warm medium supply unit for supplying a warm medium to the thermoshrinkable tape adhered to the surface of the plate-like object, the other surface of which is held by the holding unit. The warm medium supply unit may also be submersible. The thermoshrinkable protective tape can be stripped by submersing the plate-like object in warm water reserved in a tub or warm water tank or by spraying warm water from a warm water supply pipe.
Patent TW-409186-B (TW)
Title: Portable sampling device for air floating bacterium
Inventor: SUGITA NAOKI
IPC: C12M1/26
Filed: 1999-10-19
Granted: 2000-10-21
Abstract: After supporting petridish S with certain thickness of culture medium K by petridish supporter 17 of frame 14, embedding nozzol support component 13 on upper part of frame 14. When driving motor 19 rotates the high static pressure type fan 18, air will flow in from the hole 12a of nozzle 15, through the gap between nozzle 15 and culture medium K. At this time, by setting the distance from culture medium to nozzle as 0.5 to 1.5 mm high collecting efficiency will be kept.
Patent TW-499629-B (TW)
Title: Thinner composition for removing spin-on-glass and photoresist
Inventor: KIM BYUNG-UK
IPC: C11D7/26
Filed: 1999-10-27
Granted: 2002-08-21
Abstract: The present invention relates to a thinner composition for removing a spin-on-glass coating and a photoresist which are used In the semiconductor components manufacturing process. The present invention provides a mixed thinner composition which is mixed propylene glycol monoalkyl ether with monooxycarbonic acid ester, alkyl ethanoate, and alkyl lactate in a thinner composition for cleaning and photoresist removal applications in the semiconductor components manufacturing process. A thinner composition according to the present invention has the beneficial effects that the production yield can be improved during semiconductor component manufacturing since when the thinner composition is applied after the spin coating process, the undesired coating of the edge or the backside of the substrate can be removed promptly, completely, and effectively, and residual materials adhering to the surface of a substrate which must be reuse can be completely removed so that the substrate can be economically used.
Patent TW-452640-B (TW)
Title: Semi-offline feedback-type ozone water processing system for circulation water of cooling tower
Inventor: LI MING-SHIOU
IPC: F28C1/00
Filed: 1999-11-09
Granted: 2001-09-01
Abstract: A semi-offline feedback-type ozone water processing system for circulation water of cooling tower uses the water characteristics in the cooling tower of a cooling circulation water system to alter the auxiliary system of a conventional cooling tower, and adds a neutralization agent into the replenishing water to pre-dissolve ozone gas into a high concentration ozone water which is injected into the top of the cooling water tower to sterilize and remove algae from the water. When ozone is used to treat the cooling water tower, the recycle water is bypassed and isolated as a backwash water required by the sand filtration tank. The invented method is different from a split-flow continuous ozone injection treatment used in the bottom tank of the current cooling water tower, and forms an ozone treatment process that has a high efficiency and a low cost.
Patent TW-444244-B (TW)
Title: Integrated circuit device formed by micro vacuum tube technology and the manufacture process
Inventor: LU NAI-CHENG
IPC: H01L21/00
Filed: 1999-11-17
Granted: 2001-07-01
Abstract: This invention describes the manufacture process for the integrated circuit device formed by micro vacuum tube technology. A film stack is formed consisting of an insulation layer, a conductive layer and a mask layer on a substrate. The mask layer is defined to form the first opening and an insulation spacer is formed on the sidewall of the first opening. The insulation layer and conductive layer of the film stack are then defined to form the second opening with an exposed substrate surface. An inverse pointed insulation layer is formed at the second opening and extended to the surface of the film stack. Subsequently, the inverse pointed insulation layer is defined to produce polar point pattern openings exposed from the film stack surface in the vicinity of the second opening. An inverse pointed conductive layer with the inverse pointed structure on the lower surface on the surface of the inverse pointed insulation layer and the polar point pattern openings are filled. The inverse pointed insulation layer is then removed leaving the inverse pointed structure on the inverse pointed conductive layer and part of the vacuum tubes on the substrate. The tubes are sealed by the formation of a full-scale conductive layer.
Patent TW-444292-B (TW)
Title: Process for the wet chemical treatment of semiconductor wafers
Inventor: BRUNNER ROLAND
IPC: H01L21/306
Filed: 1999-11-18
Granted: 2001-07-01
Abstract: The invention relates to a process for the wet chemical treatment of semiconductor wafers, in which the semiconductor wafers are treated with treatment liquids, wherein the semiconductor wafers are firstly treated with an aqueous HF solution, then with an aqueous O3 solution and finally with water or an aqueous HC1 solution, these treatments forming a treatment sequence.
Patent TW-499615-B (TW)
Title: Liquid crystal display device
Inventor: NISHIKAWA RYUJI
IPC: G02F1/1337
Filed: 1999-11-23
Granted: 2002-08-21
Abstract: The present invention relates to a liquid crystal display device, which is provided with an alignment control window. When the alignment control window is set to be narrower, it is able to prevent pixels from becoming irregular in the place where disclination is caused and to prevent an image from becoming rough and flickering, or a view angle dependency due to the disclination. To solve the problem, the center part of the long extension part 60c of the alignment control window 60 is reduced to width w2 and the disclination occurs concentrically at this center part for preventing each pixel from being shifted. Furthermore, the center part of the long extension part 60d is formed to be wider to prevent disclination of pixels. Besides, terminal parts are arranged on two sides of the extension part 60e to prevent disclination of pixels.
Patent TW-531696-B (TW)
Title: Memory array and data access method that can shorten the data access time
Inventor: LIN CHUAN-SHENG
IPC: G06F12/00
Filed: 2000-01-18
Granted: 2003-05-11
Abstract: A memory array device, especially a memory array and its data access method that can shorten the data access time is provided. The main way is to additionally set a register management device and plural data registers among the micro-controller and at least a flash memory array. The data that need to store is divided into plural data blocks by designated unit bit counts. The data blocks are sequentially transferred from the main frame and are temporarily stored in the corresponding data registers and then are transferred from data registers to flash memory array. In the mean while, the next data lock is controlled by the circuit arrangement of the micro-controller and register management device to store in another data register and prepare to transfer to flash memory array. The transfer of each data block is processed according to the repeated circuit path changing to effectively reduce the idle state of the main frame and then shorten the data access time.
Patent TW-484188-B (TW)
Title: Plasma CVD film forming device
Inventor: MATSUKI NOBUO
IPC: H01L21/68
Filed: 2000-04-25
Granted: 2002-04-21
Abstract: This invention provides a plasma chemical vapor deposition (CVD) film forming device for forming a film on a semiconductor substrate to make the film quality and film thickness of a thin film uniform. The device consists of a vacuum chamber, a shower head installed inside a vacuum chamber and a susceptor, on which a treatment body installed practically in parallel counterposed to a shower head inside a vacuum chamber is mounted. A surface of electrode in which a central part of a shower head and/or a susceptor is recessed, is constituted.
Patent TW-593220-B (TW)
Title: Process for preparing arylamine compounds and arylhydrazine derivatives
Inventor: ANCEL JEAN-ERICK
IPC: C07B61/00
Filed: 2000-03-20
Granted: 2004-06-21
Abstract: The invention relates to processes for the preparation of compounds of formula (I), wherein R1, R2 and W are defined in the description.
Patent TW-589465-B (TW)
Title: Method for treating the surface of silicone medical devices with reactive hydrophilic polymers and devices made therefrom
Inventor: VALINT PAUL L JR
IPC: C08J7/056
Filed: 2000-05-19
Granted: 2004-06-01
Abstract: The present invention is directed toward the surface treatment of silicone medical devices such as contact lenses and medical implants. In particular, the present invention is directed to a method of modifying the surface of a medical device to increase its biocompatibility or hydrophilicity by coating the device with a hydrophilic polymer by means of reaction between reactive functionalities on the hydrophilic polymer which functionalities are complementary to reactive functionalities on or near the surface of the medical device. The present invention is also directed to a contact lens or other medical device having such a surface coating.
Patent TW-I289559-B (TW)
Title: Aminoalkyl substituted (benzodioxan, benzofuran or benzopyran) derivatives
Inventor: VAN EMELEN KRISTOF
IPC: A61P1/14
Filed: 2000-05-24
Granted: 2007-11-11
Abstract: The present invention concerns compounds of formula (I), a stereochemically isomeric form thereof, an N-oxide form thereof or a pharmaceutically acceptable acid addition salt thereof, wherein -Z1-Z2-is a bivalent radical; R1, R2 and R3 are each independently selected from hydrogen, C1-6alkyl, hydroxy, halo and the like; or when R1 and R2 are on adjacent carbon atoms, R1 and R2 taken together may form a bivalent radical of formula; Alk1 and Alk2 are optionally substituted C1-6alkanediyl; R6 is hydrogen or phenylmethyl; R5 is a radical of formula, wherein n is 1 or 2; p1 is 0, and p2 is 1 or 2; or p1 is 1 or 2, and p2 is 0; X is oxygen, sulfur or =NR9; Y is oxygen or sulfur; R7 is hydrogen, C1-6alkyl, C3-6cycloalkyl, phenyl or phenylmethyl; R8 is C1-6alkyl, C3-6cycloalkyl phenyl or phenylmethyl; R9 is cyano, C1-6alkyl, C3-6cyclo-alkyl, C1-6alkyloxycarbonyl or aminocarbonyl; R10 is hydrogen or C1-6alkyl; and Q is a bivalent radical. Processes for preparing said products, formulations comprising said products and their use as a medicine are disclosed, in particular for treating conditions which are related to impaired fundic relaxation.
Patent TW-482735-B (TW)
Title: A shifting device for a multi-speed hub for a bicycle
Inventor: STEUER WERNER
IPC: B62M11/16
Filed: 2000-06-15
Granted: 2002-04-11
Abstract: A shifting device for a multi-speed hub for a bicycle that comprises a hub axle, a driver, a hub sleeve and an epicyclical transmission with an annulus, a planet carrier, a planet wheels and a sun wheel, a control device for changing the gear ratios between the multi-speed hub and a remote control. The gear change is executed exclusively by the lifting out or engagement of pawls which can be controlled by means of shift unit. The shift sleeve and bushing have projections and gaps and can slide under a respective foot of the pawl thereby enabling the pawls to be forcibly disengaged. An advantage of the invention is the ability to disengage the respective pawl even under load without the need to employ relatively large control forces by means of the remote control.
Patent TW-503564-B (TW)
Title: Semiconductor integrated circuit apparatus
Inventor: KOKUBO MASARU
IPC: G11C11/4076
Filed: 2000-07-28
Granted: 2002-09-21
Abstract: A kind of semiconductor integrated circuit apparatus is disclosed in the present invention. In the invention, a phase comparison circuit is used to compare the signal based on the delay signal (by using a variable delay circuit to delay the input clock signal inputted from the external terminal) with the input clock signal so as to make the delayed signal as well as the input clock signal coincide with each other and control the delay time of the variable delay circuit through a control circuit. In the clock generation circuit for forming the internal clock signal, the clock generation circuit and the internal circuit that operates according to the clock signal formed by the clock generation circuit are formed on the common semiconductor substrate. In addition, by using device separation technique, the device formation region, in which the clock generation circuits are formed, is electrically separated from the device formation region of the digital circuits, which is formed on the constituted semiconductor substrate. Furthermore, the power source route is formed independently of the other digital circuits.
Patent TW-536407-B (TW)
Title: Towelette product
Inventor: GOTT ROBERT EDWARD
IPC: A61K8/06
Filed: 2000-08-28
Granted: 2003-06-11
Abstract: A disposable towelette product is provided which includes a flexible water-insoluble substrate such as a tissue impregnated with an alpha- or beta-hydroxycarboxylic acid in a cosmetically acceptable carrier vehicle. Impregnated cosmetic compositions in water will have a pH no higher than 6.8. A silicone microemulsion is present to minimize any stickiness resulting from deposition of the hydroxycarboxylic acid by the towelette onto the skin. In the presence of fatty acid group containing surfactants, the silicon microemulsion controls foul odors that the surfactants may emit through hydrolysis at low pH.
Patent TW-512399-B (TW)
Title: Coating apparatus
Inventor: MOTODA KIMIO
IPC: H01L21/00
Filed: 2000-09-16
Granted: 2002-12-01
Abstract: A resist liquid is sprayed from a nozzle of a coating head on a monitoring portion in a standby position on each of pressure sensors. When a pressure value detected at any one of the pressure sensors is abnormal, it is determined that an abnormal condition such as blockage has occurred at spray orifices of the nozzle, and washing of the nozzle is proceeded in a washing portion.
Patent TW-514656-B (TW)
Title: Process and apparatus for the continuous production of a thermoplastic polymer blend and use thereof
Inventor: MUELLER MATTHIAS
IPC: C08L69/00
Filed: 2000-09-28
Granted: 2002-12-21
Abstract: This invention relates to a process and an apparatus for the production of a thermoplastic polymer blend from polycarbonate, a thermoplastic polyester and/or vinyl polymers, optionally together with further additives and to the use of such a polymer blend. Process for the production of a thermoplastic polymer blend from polycarbonate, a thermoplastic polyester and /or vinyl polymers, optionally together with further additives, characterised by the following steps: drawing at least one of the thermoplastics used for the production of the polymer blend in the molten state directly from primary production, optionally melting the blend components which are to be incorporated, adding the blend components which are to be incorporated into the thermoplastic melt drawn form primary production, mixing all the components in a mixing section and cooling and optionally pelletising the polymer melt.
Patent TW-464963-B (TW)
Title: Fabricating method of transistor
Inventor: TZENG HUNG-HUEI
IPC: H01L21/28
Filed: 2000-10-18
Granted: 2001-11-21
Abstract: A fabricating method of transistor with T-shaped gate includes forming a sacrificial layer, a metal layer and an insulating layer on a substrate, forming a patterned photoresist layer on the insulating layer, removing part of insulating layer and metal layer by the patterned photoresist layer as a mask to form a first gate window, laterally removing part photoresist, and lateral removing the retained insulating layer by the retained photoresist as a mask to form a second gate window. Therefore, a T-shaped gate window and possible T-shaped gate structure in the T-shaped gate window can be completed.
Patent TW-474017-B (TW)
Title: Manufacturing method of MOS transistor
Inventor: HSU HSIN-HUI
IPC: H01L29/772
Filed: 2000-10-20
Granted: 2002-01-21
Abstract: The present invention provides a method for manufacturing a MOS transistor on the surface of a semiconductor chip. The method of the present invention comprises forming a gate of the MOS transistor on a substrate surface of a semiconductor chip; next, forming a dielectric layer on the surface of the semiconductor chip and performing an etching back process; then, forming a conductive spacer on a sidewall of the gate top protruded out of the surface of the dielectric layer; then, forming a lightly doped drain (LDD) of the MOS transistor on the substrate and at the periphery of the gate; subsequently, forming a dielectric spacer on the periphery of the gate and performing an ion implantation process to form the source or drain of the MOS transistor; and finally forming a salicide layer on the top surface of the gate and the substrate surface of the gate periphery, respectively, thereby completing the manufacturing of the MOS transistor.
Patent TW-490757-B (TW)
Title: Apparatus for providing ozonated process fluid and methods for using same
Inventor: VERHAVERBEKE STEVEN
IPC: H01L21/00
Filed: 2001-01-08
Granted: 2002-06-11
Abstract: The present invention is directed to apparatus and methods for wet processing electronic components using ozonated process fluids. In the apparatus and methods of the present invention, the ozonated process fluid is provided by an apparatus having a vessel for containing a stock fluid; an ozone source connected to the vessel for supplying ozone to the vessel; a fluid source in fluid communication with the vessel for supplying a fluid to the vessel; and a back-pressure regulator connected with an exhaust for regulating pressure within the vessel.