baber/WOPTO huggingface dataset:
Patent JP-H07111356-A (JP)
Title: Frequency upward conversion solid-state laser device
Inventor: NAKAI SADAO
IPC: H01S3/16
Filed: 1993-10-12
Abstract: PURPOSE:To obtain a frequency upward conversion solid-state laser device which is variable in a wavelength range of 400nm to 515nm. CONSTITUTION:A semiconductor laser 1 of wavelength band 800nm is used as an excitation optical source concerned with laser oscillation, and excitation light is made to irradiate an Er:YVO4 laser chip 3 by a condensing lens 2. At this point, the optical axis of the semiconductor laser 1 and the crystal axis of the Er:YVO4 laser chip 3 are so set as to be put in a positional relation of o polarization, pi polarization between them. The Er:YVO4 laser chip 3 is coated with a high reflection mirror coating 4 and an anti-reflection coating 5 correspondent to light ray of wavelength band 400 to 515nm which a solid- state laser is capable of oscillating and an anti-reflection coating 6 correspondent to the oscillation wavelength 800nm of the semiconductor laser 1, and the laser chip 3 and an output coupling mirror 7 are combined together to constitute a resonator structure. A concave lens 7 is used as the output coupling mirror 7 so as to make output laser ray collimated.
Patent JP-2000084642-A (JP)
Title: Binder composition for mold
Inventor: YOSHIDA AKIRA
IPC: B22C1/22
Filed: 1998-09-08
Abstract: PROBLEM TO BE SOLVED: To improve the mold strength even in the case of using organic ester or a gaseous carbon dioxide as a hardening agent by containing an alkaline water-soluble phenol base resin and an alicyclic glycol compound in the specific ratios. SOLUTION: Binder composition for mold is generally used with a formation of a water solution. At the time of molding the mold, it may be used as kneaded sand by using the binder composition as it is, and kneading with a refractoriness granular material with a mixer, etc., or it may be used by preparing the alkaline water-soluble phenol base resin and the alicyclic glycol compound indicated in the formula, separately adding into the mixer and kneading with the refractoriness granular material. In the formula, X is the bivalent alicyclic hydrocarbon group, R1 and R2 are alkylene group having 1-4 number of carbons and (m) and (n) are 0 or 1. It is desirable that the glycol compound contains 0.1-30 pts.wt. to 100 pts.wt. the alkaline water-soluble phenol base resin.
Patent JP-S61134472-A (JP)
Inventor: KARASUNO NOBUMI
IPC: B65D88/04
Filed: 1984-11-30
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。
Patent JP-H08112087-A (JP)
Title: Holder assembly for micro titre sample pipe
Inventor: REJINARUDO GURIFUIN
IPC: C12M1/00
Filed: 1995-09-29
Abstract: The plastics holder assembly includes a tray having a number of holes for receiving the tubes and having opposite vertical end walls, each of which have two spaced vertically extending slots and a horizontally extending recess between the slots. A retainer is releasably nestable in the tray having a corresponding number of holes and having opposite vertical end walls corresponding to the end walls of the tray. A U-shaped handle extends horizontally outwardly from each of the opposite retainer end walls, each handle having two legs which slide into the tray slots respectively when the retainer is nested in the tray. There is a tab projecting horizontally outwardly from each of the retainer end walls between each of the two legs which snap into the tray end wall recesses respectively when the retainer is nested in the tray. The retainer has an elongated slot parallel and directly adjacent each of the end walls, whereby inwardly directed finger pressure on the U-shaped handles inwardly flex the opposite ends of the retainer to release the tabs from the tray recesses respectively to facilitate removal of the retainer from the tray.
Patent JP-H03215675-A (JP)
Title: Plastic plating
Inventor: TEIMOSHII UORUTAA JIYONSON
IPC: C23C18/16
Filed: 1990-09-21
Abstract: PURPOSE: To easily and inexpensively form conductive plating paths on poly(arylene sulfide) articles by etching the patterned low crystalline regions formed on the surfaces of these articles, then electroless plating a conductive metal thereon.  
     CONSTITUTION: The low crystalline and high crystalline regions are formed like patterns in the polymer form on the surfaces of the poly(arylene sulfide) articles, such as poly(phenylene sulfide), etc. The formation is preferably executed by selectively casting electron beams to the crystalline surfaces and making the treated points low crystalline. The surfaces are exposed to a chemical etching agent, such as nitrosonium hexafluorophosphate, by which the low crystalline regions are selectively etched. The surfaces are then exposed to a catalyst bath and thereafter, the catalysts are wiped away from the high crystalline regions. The conductive metal, such as copper, is stuck from the electroless plating soln. onto the low crystalline etched regions contg. the resulted residual catalysts. As a result, the conductive plating paths are formed on the plastic surfaces and printed circuit boards, etc., are obtd. at a low cost. 
     COPYRIGHT: (C)1991,JPO
Patent JP-H03116714-A (JP)
Title: Manufacture of semiconductor integrated circuit element
Inventor: FUKUHARA NAOHIRO
IPC: H01L21/027
Filed: 1989-09-28
Abstract: PURPOSE:To facilitate exposure and manufacture of a large area IC chip by a method wherein the chip is composed of at least first and second regions and patterns in the first region and the patterns in the second region which are formed in predetermined processes have same shapes and patterns in the first region and the patterns in the second region which are formed in the other processes have different shapes. CONSTITUTION:There are five processes (photoresist PR) in which glass masks are used in the processes for forming IC patterns on a silicon single crystal wafer. Respective patterns 3, 4, 5 and 6 of N-type wells, field layers, gate polycrystalline silicon layers and contact layers of a region 1 and a region 2 are formed by a PR treatment with the same glass masks for both the regions In order to form aluminum patterns 7 after that, the PR treatment is performed with different glass masks for both the regions 1 and 2 respectively. In other words, by using a pattern (e) for the region 1 and using a pattern (f) for the region 2, two different masks for the respective regions are used for only one process of the aluminum PR to form large area IC patterns.
Patent JP-H02100336-A (JP)
Title: Trouble-shooting of semiconductor device
Inventor: MURASE MASAMICHI
IPC: H01L21/66
Filed: 1988-10-07
Abstract: PURPOSE:To assure observation of a waveform on a wiring in interest without being affected by an adjacent signal wiring exhibiting a large potential difference with respect to the wiring in interest by forming a partial opening through an insulating film by the use of an FIB device, forming a conductor pad of the FIB device, and forming a partial insulating film around the conductor pad using the FIB device. CONSTITUTION:An insulating film 4 for passivation on a wiring to be trouble- shot and an interlayer insulating film of a multilayered conductor wiring are removed by FIB(focused ion beam) etching to form an opening section 5. After exposing part of the wiring 3, a tungsten film 6 is formed in the opening section 5 and around the same by FIB, and an insulating film is formed in the vicinity of a tungsten pad on other wirings, excepting the portion to be trouble-shot, adjacent to the tungsten film 6. Hereby, only a potential waveform on the tungsten pad led out from the wiring to be trouble-shot can be observed for trouble-shooting through an electron beam tester without being affected by potential changes on surrounding wirings.
Patent JP-H03117269-A (JP)
Title: Halftone picture estimation device
Inventor: HASEBE TAKASHI
IPC: H04N1/40
Filed: 1989-09-29
Abstract: PURPOSE:To avoid hardware constitution from being complicated by providing plural decoding use threshold matrix storage means with different aperture and a density pattern decision circuit for scanning aperture selection having a generating means of density pattern for halftone picture estimate. CONSTITUTION:Selection information of a threshold matrix MTX and position information of scanning aperture are inputted to a storage means 68. The threshold MTX used from now is designated and an MTX data with the same aperture as scanning aperture D-A is selected and output relating the scanning position of the scanning aperture among the MTX whose position information is used and designated. The reference threshold MTX is compared for each picture element with white level picture element numbers d-a in the scanning aperture at comparators 66d-66a and based on the comparison output, a decoding density pattern is formed by density pattern generating means 67d-67a. Together with an original dither picture, both pattern picture elements are compared by coincidence decision circuits 62d-62a to decide the coincidence. Thus, even when number or aperture of the decoding threshold MTX is increased, the cost increase is suppressed.
Patent JP-S63109991-A (JP)
Inventor: KISHIMOTO YASUHIRO
IPC: B25J9/02
Filed: 1986-10-24
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。
Patent JP-H07111335-A (JP)
Title: Semiconductor device
Inventor: KAWACHI HIROYASU
IPC: H01L29/80
Filed: 1993-10-12
Abstract: PURPOSE:To enable a semiconductor device to be enhanced in a sustained voltage, increased in extraction current, and lessened in turn-OFF time. CONSTITUTION:An N<->-epitaxial layer is formed on an N-type (N<+>) silicon substrate. A P<->-channel region 14 surrounded with a P<+>-gate region 13 is formed into nearly a rectangle constricted in its middle on the surface of the epitaxial layer. A rectangular source region 15 is provided inside the channel region 14. When the semiconductor device of this constitution is turned OFF, a reverse bias voltage is applied to a gate G to extract holes from the channel region 14. At this point, as a gate contact hole 17 and the channel region 14 under the source region 15 are almost equal in resistance between them from the view point of the channel region 14, holes stored in the channel region 14 under the source region 15 in an ON-state are uniformly and concurrently extracted from all the channel region 14 at turnoff.
Patent JP-S61130293-A (JP)
Title: Fluorinated alkylcephalosporin compound
Inventor: YOSHIOKA YOSHITSURU
IPC: A61P31/04
Filed: 1984-11-30
Abstract: NEW MATERIAL:The compound of formula IV (R is H or acyl; R<1> is fluorinated alkyl; R<2> is H or methoxy; X is O, S or sulfinyl; Y is O or S). EXAMPLE:7beta-Phenylacetamido-3-trifluoroethoxy-3-cephem-4-carboxy-lic acid. USE:Antibacterial agent. PREPARATION:The compound of formula I (e.g. the exemplified compound) can be prepared e.g. according to the reaction formula, by reacting the compound of formula II (e.g. 7beta-amino-3-trifluoroethoxy-3-cephem-4-carboxylic acid) or its reactive derivative with the carboxylic acid of formula III (e.g. phenylacetic acid) or its reactive derivative in the presence of a condensation agent (e.g. 2-ethoxy-1-ethoxycarbonyl-1,2-dihydroquinoline).
Patent JP-2000091595-A (JP)
Title: High breakdown voltage diode
Inventor: MATSUHASHI DAIKI
IPC: H01L29/861
Filed: 1998-09-09
Abstract: PROBLEM TO BE SOLVED: To provide a high breakdown voltage diode, which reduces the peak value of a reverse recovery current and can make the current softly recover. SOLUTION: Trench structures 4 are respectively formed under the lower parts of the electrodes 2 out of electrodes 1 and 2 of a thin wire pattern as electrode structures in a high breakdown voltage P-I-N diode, the planar part electrodes 1 on one side of the electrodes 1 and 2 are respectively used as a press contact surface and the trench part electrodes 2, which are not used as press contact surfaces, are arranged lower by one step than the electrodes 1 so that the electrodes 2 have inductance on the electrodes 2. In the case of a high breakdown voltage element, there are many cases where the electrode parts are formed into a press contact structure and the upper surfaces of the electrodes 1 become surfaces which are press contacted in the electrode structures shown in the diagram.
Patent JP-H04133066-A (JP)
Title: Electrophotographic sensitive body
Inventor: HIRANO AKIRA
IPC: C08F12/00
Filed: 1990-09-25
Abstract: PURPOSE:To obtain the electrophotographic sensitive body having excellent mechanical strength and photoconductivity without crystal precipitation and phase sepn. by incorporating a high-polymer compd. having at least one kind of specific constitutional units. CONSTITUTION:An intermediate layer of about 0.1mum thickness consisting of vinyl chloride/vinyl acetate/maleic acid copolymer is provided on a PET film deposited with Al by evaporation. The dispersion prepd. by grinding about 40g dibromoansanthrone and further adding 20g bisphenol A type polycarbonate which is dissolved thereto is applied on the intermediate layer to form a carrier generating layer of about 0.5mum thickness. In succession, the soln. prepd. by dissolving about 20g high-polymer compd. expressed by structural units I, II, III is applied on the carrier generating layer and is dried for about one hour at about 90 deg.C temp. to form a carrier transfer layer. The sample of the photosensitive body is thus formed.
Patent JP-H03117899-A (JP)
Title: Guiding method for semiactive surface to air missile
Inventor: OIKAWA KEN
IPC: F42B10/38
Filed: 1989-09-29
Abstract: PURPOSE:To move a missile guide transmitter in the neighborhood of a target airplane and a missile to enlarge a range by attaching a wide beam fixation type transmission antenna to the missile guide transmitter to house in the missile having motive force so as to shoot in the direction for tracking the missile just after shooting the missile. CONSTITUTION:A wide beam fixation type transmission antenna 10 can entirely cover a missile combat area for radiating a transmission signal of a radar transmitter 5 to fix in the direction of an airplane axis and the radar transmitter 5 is housed in a transmitter missile 11 to move in the direction of a previous missile. Just after a missile 3 is shot, the transmitter missile 11 in which the radar transmitter 5 is mounted is shot at the same speed in the same direction, a target airplane irradiation signal C is applied to a target airplane 2 as the missile 3 is tracked and a missile reference signal D is continued to transmit to the missile 3 so as to continue semiactive guide. After the transmitter missile is shot, a ground radar stops transmission to reduce attack from the target airplane, and the transmitter is moved in the neighborhood of the missile and the target airplane to contrive the improvement of irradiation efficiency so as to contrive a long range of the missile.
Patent JP-S63108790-A (JP)
Title: Semiconductor laser with optical output monitor
Inventor: FUKUDA MITSUO
IPC: H01L31/12
Filed: 1986-10-27
Abstract: PURPOSE:To form one layer in buried layers in a photodetector corresponding to the buried layer limiting a light-emitting section in upper and lower electrodes having different conductivity, to increase a light-receiving area and to reduce dark currents resulting from the buried layers by giving energy smaller than the band gap energy of a light-emitting layer to one layer in the buried layers in the photodetector. CONSTITUTION:A laser section 53 and a light-receiving section 54 isolated by an isola tion trench 52 are formed onto an N-type InP substrate 44, and P-type InGaAsP layers 41, 41' are shaped to each of the sections 53 and 54. P-type InP clad layers 42, 42' are formed, and an InGaAsP light-emitting layer 43 is shaped to the section 53 and an InGaAsP layer 43 to the light-receiving section 54. P-type InP layers 49, 49', N-type InP layers 48, 48' and a P-type InGaAsP gap layer 47 and a P-type InGaAsP light- receiving layer 47 are formed to each of the sections 53, 54. A laser electrode+45 and a laser electrode-46 are shaped to the light-emitting layer 43 emitting laser beams 50, and a light-receiving section electrode+51 and a light-receiving section electrode-45 are formed to the light-receiving section 54. The band gap energy of one layer in the light-receiving section is made smaller than that of the light-emitting layer 43.
Patent JP-H0593931-A (JP)
Title: Wavelength conversion element and short wavelength laser beam source
Inventor: MIZUUCHI KIMINORI
IPC: G02F1/355
Filed: 1991-10-02
Abstract: PURPOSE:To obtain the wavelength conversion element which is decreased in the return light to a light source, is decreased in output fluctuations and is stable with a high output by forming the incident end face of the wavelength conversion element diagonally with a substrate. CONSTITUTION:The wavelength conversion element converts the wavelength of the incident coherent light on the incident part 4 of a waveguide 3 by periodic polarization inversion layers 2 and emits the converted light 6 from an exit part 5. The blue light of a half wavelength 0.4mum is generated by the wavelength conversion element if a semiconductor laser of 0.8mum wavelength is used for a light source. The incident end of the wavelength conversion element is diagonally polished in such a manner that the normal of the end face of the incident par 4 is not parallel with the optical waveguide 3, by which the return light to the light source is decreased and higher harmonic waves are stably generated. This wavelength conversion element is increased in the effect of confining the light by using the optical waveguide 3 and in addition, the long working length can be attained with this element and, therefore, the conversion with the extremely high light efficiency is possible. Since the output is produced in a waveguide mode, the exit light having an excellent convergent property is obtd.
Patent JP-H0197813-A (JP)
Title: Optical displacement detector
Inventor: YASUDA TAKAFUMI
IPC: G01D5/30
Filed: 1987-10-09
Abstract: PURPOSE:To increase the degree of parallelism of an illumination light without increasing the thickness of a detector and thereby to improve the precision of measurement, by providing the optical axis of a light-emitting element in parallel to a main scale and by disposing a concave reflector and a prescribed reflector on the optical axis. CONSTITUTION:A light-emitting element 24 is disposed on a second member 20 having a reference scale 20 which moves relatively to a main scale 16. The optical axis of the light-emitting element 24 is set to be parallel to the main scale 16, and a concave reflector 28 and a reflector 29 are disposed on the optical axis. In this construction, a light from the light-emitting element 24 is made to be parallel rays by the concave reflector 28 and applied onto the scale 16 by the reflector 29, and an amount of relative displacement is detected from an output signal of a photosensing element 26 based on the repeated overlap of the scales 16 and 20 with each other. Even when the focal distance of the concave reflector 28 is increased to improve the degree of parallelism of the illumination light, on the occasion, the thickness of a detector does not need to be increased. Accordingly, the precision of measurement can be improved by increasing the degree of parallelism of the illumination light.
Patent JP-H02218784-A (JP)
Title: Highly compressible gasket material and its manufacture
Inventor: SUTEFUEN PITORAJI
IPC: F16J15/10
Filed: 1989-10-02
Abstract: A highly compressible gasket material is formed by fusing two filled sheets (10) (12) of PTFE containing dispersed microballoons to a central unfilled sheet (14) of PTFE which provides tensile stength to the material. The two unfilled sheets (10) (12) each constitute from 20% to 25% of the overall thickness of the gasket material. This method provides a unitary gasket assembly having an overall compressibility of 45% or more, but the thicker unfilled PTFE central area (14) of the assembly provides excellent recovery characteristics and resistance to creep relaxation.
Patent JP-S62115922-A (JP)
Title: Carrier input control circuit to phase difference dividing filter
Inventor: WATANABE NAOKI
IPC: H03L3/00
Filed: 1985-11-14
Abstract: PURPOSE:To prevent the occurrence of carrier abnormalities by providing a circuit delaying a carrier input to a phase dividing filter when the power source of a phase differential dividing filter is entered and circuit stopping carrier supply to the phase dividing filter after a drop in a power source voltage is detected. CONSTITUTION:A voltage C in normal operation is set to a positive 5V, and a voltage at a point (b) is set slightly higher than the threshold voltage of an IC 1. If a power source of a positive 15V is disconnected, a voltage at a point (c) being the power source of the IC 1 slowly drops because said voltage includes D1 and C1, whereby it can be used as a power source. A waveform at a point (d) comes to H from L at a point (DELTAV) where the voltage at the point (b) drops below the threshold voltage of the IC 1, and returns to L again due to the drop in the power source voltage after the H state is held for a time T. The clear input of a carrier supply circuit is of a waveform at a point (e), basically the inversion of the waveform at the point (d). However, said input will not return to H after the time T but remains L and stops during such a short time as a time DELTAt after a phase difference dividing filter supply is cut. Thus the carrier abnormalities of the phase difference dividing filter can be prevented to eliminate the influence to circuits.
Patent JP-H03121365-A (JP)
Title: Speed change controller for automatic transmission
Inventor: SASAKI KAZUNARI
IPC: F16H59/44
Filed: 1989-09-30
Abstract: PURPOSE:To prevent hunting by setting a first and a second lines on a higher and a lower car speed sides than a single shift down line of transmission characteristics and by carrying out shift down from the higher and the lower car speed sides than the first line based on the first and the second lines when an engine load is zero. CONSTITUTION:A control U which receives signals from sensors 21 and 22 of a throttle opening degree and a car speed and a switch 23, drives solenoids 5 and 6, and controls a multi-stage transmission gear mechanism 4 is given a following function. That is, as for a single shift line of transmission characteristics, a first line is set on the higher car speed side when a load is almost zero in a zone where the engine load is small, and a second line on the lower car speed side than the first line at the almost same car speed when the load is zero or larger. And shift down at higher car speed and lower car speed than the first line is controlled based on the first and the second lines respectively. Thus, an engine brake can be secured and hunting can be prevented.
Patent JP-H05135340-A (JP)
Title: Floating type magnetic head
Inventor: KAZAMA TOSHIO
IPC: G11B21/21
Filed: 1991-10-02
Abstract: PURPOSE:To make it possible to coincide a position of a centroid of a slider with a position of a centroid of a pivot, even in the height direction of the slider and also in the horizontal direction. CONSTITUTION:The slider having a magnetic core 6 is attached to a tip of a load beam via a flexure. In the floating type magnetic head, a recess 34 is formed at a central side of a flexure attaching surface 28 of the slider and at both sides of the recess 34, wall parts 33 are formed and the flexure 18 is attached to a bottom surface of the recess 33 and a groove 1 for weight balance adjustment is formed at the wall part 33.