Patent SG-11201902257T-A (SG)
Title: Process for the generation of thin silicon-containing films
Inventor: AHLF MARAIKE
IPC: C23C16/34
Filed: 2017-10-18
Abstract: INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property 111111111111111111111111111 01111101 0 11H0111101111 11111110111111111101111 0111111 Organization International Bureau (10) International Publication Number (43) International Publication Date .....0\"\" WO 2018/077684 Al 03 May 2018 (03.05.2018) WIP0 I PCT (51) International Patent Classification: EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, C23C 16/455 (2006.01) C23C 16/34 (2006.01) MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, C23C 16/40 (2006.01) C23C 16/32 (2006.01) TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG). (21) International Application Number: PCT/EP2017/076556 Published: (22) International Filing Date: — with international search report (Art. 21(3)) 18 October 2017 (18.10.2017) (25) Filing Language: English (26) Publication Language: English (30) Priority Data: 16195487.0 25 October 2016 (25.10.2016) EP (71) Applicants: BASF SE [DE/DE]; Carl-Bosch-Strasse 38, 67056 Ludwigshafen am Rhein (DE). UNIVERSITAET DES SAARLANDES [DE/DE]; Campus, 66123 Saar- brficken (DE). — (72) Inventors: AHLF, Maraike; Carl-Bosch-Strasse 38, 67056 Ludwigshafen (DE). SCHWEINFURTH, David Dominique; Carl-Bosch-Strasse 38, 67056 Ludwigshafen — (DE). MAYR, Lukas; Carl-Bosch-Strasse 38, 67056 = Ludwigshafen (DE). LESZCZYNSKA, Kinga Izabela; Campus, 66123 Saarbrficken (DE). SCHESCHKEWITZ, David; Campus, 66123 Saarbrficken (DE). _ Agent: BASF IP ASSOCIATION; BASF SE, G-FLP - (74) C006, 67056 Ludwigshafen (DE). = (81) Designated States (unless otherwise indicated, for every kind of national protection available): AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, = _ CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, = = = KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, _ = _ OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. = = = Designated States (unless otherwise indicated, for every (84) = kind of regional protection available): ARIPO (BW, GH, — GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, = UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, 1-1 ..! (54) Title: PROCESS FOR THE GENERATION OF THIN SILICON-CONTAINING FILMS 71' (57) : The present invention is in the field of processes for the GC generation of thin inorganic films on substrates. In particular, the present IN invention relates to a process comprising depositing the compound of gen- R 5 R 2 t - - c;;;; ) L,----Si—X n (I) L = eral formula (I) onto a solid substrate, wherein R1, R 2 , R, R 3 4 , and R s is --.... 00 hydrogen, an alkyl group, an alkenyl group, an aryl group or a silyl group, R R 1 wherein not more than three of R 1 , R, R, R 2 3 4 , and R 5 are hydrogen, X 0 ei is a group which binds to silicon, m is 1 or 2, n is 0, 1, or 2, and Si is in the oxidation state +2.