baber/WOPTO huggingface dataset:
Patent JP-S5787728-A (JP)
Title: Operating device of tail gate for dump truck
Inventor: YAMAMURA SATORU
IPC: B60P1/267
Filed: 1980-11-21
Abstract: PURPOSE: To prevent damage of a tail gate at the time of dumping by changing a link mechanism of opening the tail gate of a dump body of a dump truck by a rearward slant of the dump body of the dump truck into that of opening the tail gate widely when the tail gate is pushed from the inside of the tail gate while an opening of the tail gate is not wide enough.  
     CONSTITUTION: When a load in a dump body, for example rearward rock rolling over a floorboard of a dump truck hits a tail gate 9 while a dump body slanting rearward starts to open the tail gate 9 causing actuation of great force pushing the tail gate 9 rearward, which is led through a supporting arm 7, a connecting link 13, a No.1 arm 12, a torque shaft 10, a No.2 shaft 15 and a link 19 to a link  20 causing counter clockwise rotation of the link 20. Then, the tail gate 9 turns upward freely by the pressure preventing the tail gate 9 from breaking by dumping the rock through the widely opened tail gate. 
     COPYRIGHT: (C)1982,JPO&Japio
Patent JP-H10337305-A (JP)
Title: Absorption body and absorption product
Inventor: FUJITA MASAHISA
IPC: A61F13/15
Filed: 1997-06-05
Abstract: PROBLEM TO BE SOLVED: To provide an absorption product which quickly absorbs urine, blood, body fluids, etc., has a good dry feeling after absorption, decreases leakage at peripheral or sides, and can be comfortably used for a long time. SOLUTION: This absorption product is designed in such a manner that an absorption part A made of a combined material consists of a polymer absorbing material whose absorbing ability under load (load: 40 g/cm<2> ) for the physiological salt solution is above 15 g/g and whose 40 times absorbing gel elastic modulus for the physiological salt solution is above 6,000 N/m<2> and a fabric material, the absorption part is placed at a center part of the absorption product viewed from above.  At the both sides or peripheral of the absorption part A, an edge absorption part B made of a combined material is provided which consists of a polymer absorbing material whose absorbing ability under load for the physiological salt solution is above 45 g/g and a fabric material, and an absorbing body 1 in which the width of absorption part is at least 5 mm from the edge of the absorbing body 1 is placed between a permeable surface sheet and an impermeable surface sheet.
Patent JP-S6145566-A (JP)
Title: Manufacture of grid for lead storage battery
Inventor: JINUSHI OSAMU
IPC: H01M4/74
Filed: 1984-08-07
Abstract: PURPOSE:To improve the adhesion between the grid and the active material so as to extend the life of a lead storage battery by making the grid by passing a Pb-Ca alloy sheet between a pair of rollers having irregular surfaces to form concave and convex areas on the surfaces of the sheet before it is expanded and then curving the concave and convex areas on the surfaces almost perpendicularly. CONSTITUTION:A Pb-Ca sheet is formed into a sheet 4 having an irregular surface by means of a knurling tool. During the time when this sheet is expanded into a grid, concave and convex areas 3 are curved almost perpendicularly so that they are located inside grid bones 8 surrounding spaces 10. When an active material 9 packed into such a grid is dried and solidified, the active material 9 closely adheres to the concave and convex areas 3 of the grid in a greater area as compared to a conventional grid. Due to the concave and convex areas 3 on the inner surface of the grid bones 8, the separation of the active material 8 is prevented. Furthermore, improved adhesion between the active material and the grid bones 8 is achieved and development of a calcium oxide film can be inhibited, thereby greatly suppressing the decrease in the conductivity between the active material and the grid bones 8. Accordingly, it is possible to produce a long-life storage battery which minimally causes self discharge and does not require water supply.
Patent JP-S5593143-A (JP)
Title: Original pressure contact device of copying machine
Inventor: ARIYAMA KENZOU
IPC: G03B27/62
Filed: 1978-12-30
Abstract: PURPOSE: To enable the pressure plate to be pressure-contacted even with thin originals and thick originals in a state parallel with the platen by the constitution comprising providing an elastic body which stops the pressure plate against the own weight of the pressure plate and means consisting of link members and providing a detention means to the top surface of the copying machine body.  
     CONSTITUTION: A hinge member 2 is provided to the end part of a pressure plate 1. This hinge member 2 is supported turnably to the horizontal shaft 4 provided elevatably to the copying machine body. A stopper member 12 is turnably mounted to the horizontal shaft 4 and is interlocked to the hinge member 2. The means consisting of elastic material 14 and link member 11 which energize the pressure plate upward when the angle θ of inclination between the same and platen 15 is within a range from 0° up to 90° and about a fixed value and stop the pressure plate 1 against the own weight of the pressure plate 1 when said angle θ of inclination is within a fixed range are provided to the hinge member 2. In addition, a stopper detention member 16 is provided to the top surface of the copying machine body. 
     COPYRIGHT: (C)1980,JPO&Japio
Patent JP-S5967109-A (JP)
Inventor: HANSU ZAITSU
IPC: B60C15/02
Filed: 1983-09-09
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。
Patent JP-S6144130-A (JP)
Title: Manufacture of intrasurface nonoriented electrical iron sheet
Inventor: TOMITA TOSHIRO
IPC: C21D8/12
Filed: 1984-08-07
Abstract: PURPOSE:To manufacture efficiently and stably an intrasurface nonoriented electrical iron sheet having superior soft-magnetic characteristics by forming a molten high-silicon iron alloy having a specified composition into a sheet by a very rapid cooling method and by subjecting the sheet to decarburization annealing at a proper temp. in an atmosphere of gaseous hydrogen or an inert gas. CONSTITUTION:The molten high-silicon iron alloy contg. 2.0-8.0wt% Si and 0.016-1.000wt% C is formed into a sheet by a very rapid cooling method, and the sheet is subjected to decarburization annealing at 600-1,300 deg.C in the atmosphere of gaseous hydrogen, the inert gas such as N2 or Ar, or a mixture thereof. The dew point of the annealing atmosphere is preferably kept at -30--70 deg.C, and the proper annealing time is about 5min-12hr. Thus, the intrasurface nonoriented electrical iron sheet having superior soft-magnetic characteristics is stably obtd. independently of the thickness and the rate of annealing.
Patent JP-S6225016-A (JP)
Title: Manufacturing method for split-type mold for molding tyre
Inventor: KODAMA KUNIO
IPC: B29D30/06
Filed: 1985-07-26
Abstract: PURPOSE:To save manufacturing time and cost without pre-cutting segments to get the desired spaces by assembling plural numbers of segments, cut with the wire cutter with the spaces equal to the cutting margins of wire. CONSTITUTION:The segments 1-1 up to 1-7 are provided by cutting the tread ring A, a ring body made of aluminum alloy, on the inner circumference on which the desired tread 4 is formed into the plural pieces in the gnomonic direction. The said segments are assembled cyclicly leaving the space (d) be tween each piece of the segments to make up a split-type mold for molding tyres. The tread ring A is cut by means of wire discharging, making the cutting margin d' approximately 0.3mm. This cutting margin d' conforms with the space (d) between each piece of the segments, which provides the required space (d) by assembling plural numbers of segments 1-1 up to 1-7 directly and cyclicly. This process eliminates cutting the face of elements with the band saw and with the milling machine required in the existing process.
Patent JP-H11351788-A (JP)
Title: Heat exhausting structure for condenser
Inventor: NAGIRA MASANOBU
IPC: F28F9/22
Filed: 1998-06-12
Abstract: PROBLEM TO BE SOLVED: To simply assemble a condenser duct by improving a cooling efficiency with a cooling air, and enhancing a condensing efficiency of the condenser to reduce in size a fan, thereby reducing a noise and a dissipation power. SOLUTION: A condenser duct 20 has a mounting plate 26 and a duct member 34. A condenser 12 is obliquely disposed in the duct 20. A condenser upper cover 30 covering an upper end face 36 of a downstream side of a flowing direction of a cooling air from a fan 16 in the condenser 12 is arranged on the plate 26. A shield 30 covering an exhaust surface 38 for exhausting the cooling air after heat exchanging of the condenser 12 in a predetermined length by bending down the face 36 of the condenser 12 at a rear end of a coating 30c entirely covering the face 36 is formed at the upper cover 30 of the condenser.
Patent JP-S6410814-A (JP)
Title: Underwater ground improving system
Inventor: MURAKAMI TAKAAKI
IPC: E02D3/10
Filed: 1987-07-03
Abstract: PURPOSE:To obtain a planned placing amount of improving agent with high accuracy by a method in which necessary data on the placement of improving agent are taken into a computer. CONSTITUTION:A casing pipe 3 is driven from an improving pile driving ship 5 into the ground 1 below water surface, and an improving agent is charged into the pipe 3. Water depth of an improving pile-forming position and the storing amount of the improving agent are put in a computer, and the driving amount of the pipe 3 and the packing condition of the improving agent in the pipe 3 are monitored and fed back to driving control. The improving agent can thus be automatically supplied and improving pile can be formed in accordance with a design.
Patent JP-S6323830-A (JP)
Title: Production of bisphenol
Inventor: ONO YUZO
IPC: C07C39/16
Filed: 1986-07-16
Abstract: PURPOSE:In producing the titled compound from phenol and ketone in the presence of an acidic catalyst, to raise conversion ratio of ketone and to reduce the amount of a catalyst used and the amount of op' derivative(isomer) as a by-product, by converting ketone to thioketal, recovering the thioketal and reacting the thioketal with the phenol. CONSTITUTION:In producing a bisphenol from phenol and ketone in the presence of an acidic catalyst, especially insoluble acidic catalyst such as strongly acidic ion exchange resin, such as bisphenol A useful as a raw material for polycarbonate resin or epoxy resin, ketone is preferably reacted with a mercapto compound, converted into a thioketal and water and unreacted ketone are separated from the reaction mixture to recover the thioketal. Then the thioketal is reacted with phenol in the presence of the catalyst, reduction in catalytic activity resulting from water formed by the reaction is eliminated, conversion ratio of the thioktal, consequently of the ketone, is extremely improved and the amount of the catalyst used and the amount of op' derivative(isomer), etc., as by-products are reduced to give the aimed compound advantageously.
Patent JP-S5866748-A (JP)
Title: Method for controlling ignition of hot water supplier using combustion fan
Inventor: AIHARA TOYOAKI
IPC: F23N5/18
Filed: 1981-10-16
Abstract: PURPOSE:To supply hot water at a stable temperature when using hot water intermittently within a predetermained period of time by carrying out an ignition operation by detecting an air pressure generated by a combustion fan operating by detecting water supply to a water heater, and operating the combustion fan at a predetermined period of time after stopping water supply. CONSTITUTION:When a water flow switch 6 detects water supply, a combustion fan 3 is operated via an OR circuit 9. When an air pressure switch 4 detects the air pressure of the combustion fan 3, it operates an ignition operation circuit 10 through an AND circuit 11 together with the detection signal of a flow water switch 6 to open a gas valve 2 and ignite a burner 1 by an ignition electrode 7. When a water supply cock 5 is closed, the water flow switch 6 is turned off, and the ignition operation circuit 10 becomes inoperative. However, a timer T is started, and the operation of the combustion fan 3 is continued. The signals of the flow water switch 6 and the timer T are sent to a timer T' through an OR circuit 12. After starting the water supply, the ignition operation circuit 10 is operated through the AND circuit 11 after lapse of a predetermined time after starting the combustion fan 3.
Patent JP-S5788654-A (JP)
Title: Assembly method of flat type cathode-ray tube
Inventor: SATOU KOUKI
IPC: H01J31/12
Filed: 1980-11-25
Abstract: PURPOSE:To improve the accuracy of a flat type cathode-ray tube by arranging rear and deflection electrodes in each specified position based on a reference surface which has a positional relationship with a contact surface between a funnel panel and the funnel, then arranging the funnel and fixing both electrodes on the inner surface of the funnel. CONSTITUTION:A rear electrode 3 on which a stud 41 is mounted is positionally regulated by a jetty 23 and a pin 24 and loaded on the surface 22a of a protruded stand 22 on the base stand 21 of a jig 20. Also, a frame consisting of deflection electrodes 9a and 9b and a guide cylindrical body 15 is fixed on a reference level 21a by means of a lever body 28 so that the electrode 9a can protrude outward. Then glass frit is applied on the stud 41 and the connection insulating board of the deflection electrode 9. Then, the end face 1b4 of a funnel 1b is made to collide with the reference level 21a, placed on the base stand 21, and pressed down by means of screw levers 60 and 61. The jig 20 is frit-treated in a heating furnace in this state and both electrodes 3 and 9 are fixed on the inner surface of the funnel. As a result, the accuracy of assembling a flat type cathode-ray tube can be improved.
Patent JP-S5591823-A (JP)
Title: Manufacture of semiconductor device
Inventor: KARIMOTO HIROYASU
IPC: H01L21/306
Filed: 1978-12-29
Abstract: PURPOSE: To equalize rate of etching or plating of electrodes connected to a p-type region and an n-type region, by conducting plating or etching of adjacent semiconductor wafers by aligning them in such a manner as to make their face sides or back sides facing each other.  
     CONSTITUTION: A wafer, on which a pn junction is formed and whose Al electrode and its surface are covered with an insulating film, is convered with a photosensitive resin for the formation of windows for extraction of the electrode. The wafer having been completed up to this stage is so arranged that main front surfaces 24 or reverse surfaces 25 of semiconductor devices made to face each other, placed in a wafer carrier 13 and dipped in an etching liquid 12. By doing so, rates of etching of the Al electrode at the opening section (the window) become almost equalized between the electrode connected to p side of the pn junction and that connected to n side, and in the case of plating, a plating thickness becomes equalized so that heights of projecting electrodes to be formed thereon can be levelled. 
     COPYRIGHT: (C)1980,JPO&Japio
Patent JP-2000351268-A (JP)
Title: Manufacture of ink jet recording material
Inventor: TOKUNAGA YUKIO
IPC: B41M5/50
Filed: 1999-06-11
Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing an ink jet recording material which shows high productivity, ink absorption and superb gloss. SOLUTION: This recording material has an ink receptive layer containing a vapor phase process silica applied and dried on a support. In this case, the solid content concentration of the ink receptive layer ranging from 95 wt.% to the end of drying is dried using air having 20-60% relative humidity and 27-40 deg.C temperature.
Patent JP-S6226767-A (JP)
Title: Sodium-sulfur battery
Inventor: MORI SADAO
IPC: H01M10/39
Filed: 1985-07-29
Abstract: PURPOSE:To increase the reliability of a sodium-sulfur battery by increasing the intensity of fusion between the electrolyte tube of the battery and an insulating material by making the sectional area of the fused part larger than that of the separating wall of the electrolyte tube. CONSTITUTION:After the upper end of an electrolyte tube 1 is fixed to an insulating material 4, a negative can 6 packed with a negative active material 7 consisting of sodium is fused to the upper surface of the insulating material 4 and a positive can 6 packed with a positive active material 8 consisting of a sulfur-containing carbon material is fused to the lower surface of the insulating material 4 to make the electrodes face each other with an electrolyte tube 1 interposed, thereby producing a sodium-sulfur battery. The thickness of the upper end 3 of the electrolyte tube 1 is larger than that of its straight tubular section. The electrolyte tube 1 is fused to the insulating material 4 at the thick section 10 by using glass pewter 5. As a result, the sectional area of the fused part is increased and its physical strength is increased, thereby increasing the life of the battery without reducing its performance.
Patent JP-H0462836-A (JP)
Title: Method and apparatus for heat treatment
Inventor: KONO MICHIHISA
IPC: H01L21/265
Filed: 1990-06-25
Abstract: PURPOSE:To remarkably increase a uniformity of the surface of a substrate by heat-treating an ion-implanted III-V compound semiconductor in an arsenic atmosphere for a short time with a core tube heated by metal plates which are brought into contact with the core tube to absorb infrared rays. CONSTITUTION:Tungsten halogen lamps are placed above and below the outer surface of a quartz glass core tube 2. Metal plates 5, which are adhered tightly to parts of the inside of quartz glass, absorb rays emitted by the lamps efficiently. Because of this, the core tube can be maintained at high temperature. Generally, infrared rays is absorbed by a metal better than by a semiconductor. When a semiconductor is heat-treated, the temperature required to prevent adhesion of an arsenic part (about 500 deg.C) can be certainly secured since the temperature of the inside of the core tube gets higher than that of the semiconductor sample (usually, 600-1000 deg.C). As for a method, the <100> direction LEC (Liquid Encapsulated Czochralski) method is employed. 1X10<13>cm<-2> of Si<+> is injected into an undoped semi-insulating GaAs substrate 3 at the injection energy 100ke at room temperature. After that, the substrate 3 is heat-treated for 5 minutes at 930 deg.C with the temperature of the inside of the core tube maintained at 620 deg.C.
Patent JP-S648980-A (JP)
Title: Balloon catheter and its preparation
Inventor: TAKEUCHI HAJIME
IPC: A61M25/00
Filed: 1987-07-02
Abstract: PURPOSE:To enhance discharge and injection efficiency and to facilitate the insertion to a living body, by fixing a balloon to the small diameter part of a catheter tube and filling the gap between the leading end part of the balloon and that of a catheter main body with a soft resin so as to reduce a diameter toward the leading end of the catheter main body. CONSTITUTION:A balloon catheter has a catheter main body 1 having a main lumen 10 whose leading end is an opening end 3 and a side lumen 12 whose leading end is closed, and the balloon 4 fixed to the catheter main body 1 so as to surround the same over a predetermined length and to communicate with the side lumen 12. The balloon 4 is formed into a short cylindrical shape having an inner diameter equal to the outer diameter of the small diameter part 7 of the catheter main body 1 and fitted to the small diameter part 7 so as to cover a communication hole 15 and the inner surfaces of the balloon at both ends thereof are fixed by an adhesive. The catheter main body 1 has the almost same outer diameter in such a state that the balloon 4 is fixed. The gap between the leading end of the balloon 4 and that of the catheter main body 1 is filled with a soft resin 8 so as to reduce a diameter toward the leading end of the catheter main body 1 in a tapered state.
Patent JP-H0330476-A (JP)
Title: Mis transistor and protective circuit provided therewith
Inventor: KAGENISHI YUKIHIRO
IPC: H01L21/8234
Filed: 1989-06-28
Abstract: PURPOSE:To obtain a MIS transistor improved in strength to dielectric breakdown caused by an excessive voltage applied from the outside without making a semiconductor device large in area by a method wherein an impurity region which is of the same conductivity type as a drain region and higher than it is impurity concentration is provided at a boundary plane between the drain region and an element isolating region. CONSTITUTION:An element isolating region 2 is selectively formed on a certain conductivity type semiconductor substrate 1, a source region 6 and a drain region 7 are formed on the part of the substrate 1 where the element isolating region 2 is not provided, a gate insulating film 4 and a gate electrode 5 are laminated on the surface of the substrate 1 between the regions, 6 and 7, and an impurity highly concentrated region 8 which is of the same conductivity type with the drain region 7 and higher than it in impurity concentration is formed between the drain region 7 and the element isolating region 2 along the end of the element isolating region 2. By this setup, as a region made low in breakdown strength can be formed large in area without enlarging the gate of a MIS transistor in width and length, a breakdown current can be kept low in density and the MIS transistor can be enhanced in strength to electrostatic breakdown.
Patent JP-S5789763-A (JP)
Title: Electrophotographic receptor
Inventor: MISUMI TERUO
IPC: G03G5/043
Filed: 1980-11-26
Abstract: PURPOSE:To avert the influence of short wavelength light upon the potential of electrostatic images and provide high sensitivity to long wavelength light by providing a SeTe type auxiliary layer of a low Te content concn. having sensitivity to wavelengths below specific ones on an electric charge generating layer. CONSTITUTION:This has an Se type electric charge transfer layer 2, a SeTe type electric charge generating layer 3 of a high Te content concn. having high sensitivity to long wavelength light of >=720nm on this charge transfer layer, and an SeTe type auxiliary layer 4 of a low Te content concn. having sensitivity to wavelength light of <=680nm on this charge generating layer. It is preferable that the difference in the contents of Te between the charge generating layer and the auxiliary layer is 8wt%, more particularly >=10wt%.
Patent JP-H0513768-A (JP)
Title: Insulating gate type bipolar transistor
Inventor: SAITO TATSU
IPC: H01L29/78
Filed: 1991-07-08
Abstract: PURPOSE:To build a current regeneration diode connected reversely parallelly between an emitter electrode and a collector electrode in the same semiconductor device as an IGBT body. CONSTITUTION:A region of the same conductivity type as that of a channel region is formed on a surface layer of a base layer 1, and to one electrode 8 of a diode formed by a pn junction therebetween is applied electrode in contact with that region and connected with that region and an electrode in contact with a buffer layer 2 of the same conductivity type as that adjoining to the base layer 1 and also in contact with a collector layer 3 and further short- circuited with that is applied to the other electrode, and hereby a current regeneration diode connected with the emitter electrode 8 and with a collector electrode 9 is yielded.