baber/WOPTO huggingface dataset:
Patent TW-360743-B (TW)
Title: Internal combustion engine charged by means of an exhaust gas turbocharger, with an additional exhaust gas energy converter and procedure to operate this internal combustion engine
Inventor: JELONEK KLAUS
IPC: F01K23/10
Filed: 1998-09-23
Granted: 1999-06-11
Abstract: Internal combustion engine charged by means of an exhaust gas turbocharger with an additional exhaust gas energy converter, which transfers the output produced thereby to the internal combustion engine to increase its degree of efficiency, characterized by the fact that it is provided with equipment for steam generation (3) as an exhaust gas energy converter, by means of which energy can be drawn from the exhaust gas mass flow coming out of the exhaust gas turbocharger (1), and it is provided with a steam turbine plant (4) which includes a steam turbine (9), which can be connected to crankshaft (20) of the internal combustion engine (2).
Patent TW-406457-B (TW)
Title: Method of rehabilitating a rack for electronic-card plug-in units and rack thus rehabilitated
Inventor: RUQUE CHRISTIAN
IPC: H05K7/14
Filed: 1999-01-26
Granted: 2000-09-21
Abstract: The present invention relates to a method of rehabilitating a rack (100A) for plug-in units (7) for electronic cards, characterized in that it comprises the steps consisting in: creating a disconnectable electronic plug-in unit (13) which has a connection system (14) on its rear face and has a depth P which is less than the depth L of the plug-in unit (7) to be rehabilitated; creating at least one plug-in unit (9A) at the back of the rack, which supports, on the front face, a set of floating connectors (10) for the back of the disconnectable electronic plug-in unit (13) and which supports, on the rear face, a set of means consisting of of link connectors (12), a cable system (11) of the plug-in unit (9A) at the back of the rack connecting the said set of floating connectors (10) to the said set of link connectors (12); retaining, from the said rack (100A) to be rehabilitated, a mechanical rack assembly (1, 2), rear supports (3) for the connectors (4) for the back of the plug-in units to be rehabilitated, the set of the said connectors (4) for the back of the said plug-in units (7) to be rehabilitated and the output cable system (5) of the rack (100A); creating an open area Z between the said rear supports (3) for the connectors (4) at the back of the rack (100A) and the said connection system (14) of the said disconnectable electronic plug-in unit (13), into which area the said plug-in unit (9A) at the back of the rack can be inserted.
Patent TW-434473-B (TW)
Title: Program and method for comparing similarity between two computer software
Inventor: CHEN ROBERT H
IPC: G06F1/00
Filed: 1999-02-02
Granted: 2001-05-16
Abstract: The present invention discloses a computer software comparison program. In its technological conception, a basic unit comparison code is selected from a marked software and, based on the selected basic unit comparison code, comparison can be made between the marked software and a to-be-compared software. If the to-be-compared software has a program code identical to the basic unit comparison code, all the related information of the program code will be recorded and the basic unit comparison code will automatically be extended. Then, based on the extended basic unit comparison code, the same comparison procedure will be carried out between the marked software and the to-be-compared software. All the recorded information will be used as statistics for determining the similarity between the to-be-compared software and the marked software. Also, in order to analyze the similarity more objectively, the present invention's comparison program can quickly scan through the to-be-compared software to locate all program codes suspected of piracy. Besides, the present invention's comparison program can be used as a compatible software for the inspection of OEM or foundry-out software development or even as a customs inspection tool for the random inspection of imported/exported computer software.
Patent TW-526296-B (TW)
Title: A method of making a bonded, coherent material comprising mass of diamond crystals in a matrix
Inventor: DAVIES GEOFFREY JOHN
IPC: B01J3/06
Filed: 1999-02-06
Granted: 2003-04-01
Abstract: A method of making a bonded, coherent material comprising a mass of crystals, preferably diamond crystals, in a matrix is provided. The steps include providing a source of the crystals of the type to be grown and which are substantially free of macroscopically faceted surfaces, producing a reaction mass by bringing the source crystals into contact with a suitable solvent/catalyst, subjecting the reaction mass to conditions of elevated temperature and pressure suitable for crystal growth in the reaction zone of a high temperature/high pressure apparatus to produce the material and removing the material from the reaction zone, the conditions of crystal growth being chosen such that the source crystals are converted to crystals having developed macroscopic facets of low Miller index.
Patent TW-419779-B (TW)
Title: An improved method of forming an arsenic silicon glass film onto a silicon structure
Inventor: DUTRON ANNE MARIE
IPC: H01L21/8242
Filed: 1999-03-01
Granted: 2001-01-21
Abstract: The method of the present invention is directed to the formation of an arsenic silicon glass (ASG) film onto a silicon structure and finds a valuable application in the buried plate region formation process in the manufacture of deep trench cell capacitors in EDO and SDRAM memory chips. The starting structure is state-of-the-art and consists of a silicon substrate coated by a patterned Sio2/Si3N4 pad layer which defines deep trenches formed therein by etching. At the beginning of the conventional buried plate region formation, the interior side walls of deep trenches are coated with an arsenic doped silicon glass (ASG) film resulting from the co-pyrolysis of TEOS and TEASAT in a vertical hot dual wall LPCVD reactor as standard. According to the present invention, a flow of  02 is added which makes this co-pyrolysis of TEOS and TEASAT no longer interactive. As a consequence, the improved process is much better controlled than the conventional one. The ASG film is conformally deposited onto the structure with a high degree of thickness and arsenic concentration uniformity within a same wafer and from wafer to wafer of the lot.
Patent TW-424150-B (TW)
Title: Phase lag-Phase lag adjustment method of IC test apparatus and the virtual apparatus used in this method
Inventor: NAGAI HIROYUKI
IPC: G01R31/28
Filed: 1999-04-01
Granted: 2001-03-01
Abstract: This invention is about the phase lag adjustment method of IC test apparatus and the virtual apparatus used in this method, in which IC test apparatus having plural pieces of pin card and IC socket is provided such that the phase lag adjustment of IC test apparatus can be accurately performed. Any one piece among the plural pieces of pin card 11A to 11N connected with the pins of the IC socket 10 is set as the baseline pin card 11N. When placed on the IC socket, for the baseline pin card 11N stated above, plural pieces of virtual apparatus 12 are prepared and are electrically connected with the other pin cards through IC socket. After these virtual apparatus are sequentially set on the IC socket, all the drivers DR of the other pin card are sequentially connected to the voltage comparator CPN of the baseline pin card stated above. The variable delay circuits DRY1, DRY2 of each pin card are adjusted so as to fulfill the driver delay phase of each pin card and the delay phase of baseline phase is then defined.
Patent TW-552170-B (TW)
Title: Wire netting for a gravel screen or for protecting a soil surface layer, as well as a process and a device for manufacturing it
Inventor: EICHER BERNHARD
IPC: B21F27/02
Filed: 1999-04-22
Granted: 2003-09-11
Abstract: A wire netting, preferably used as a gravel screen or for protecting a soil surface layer is woven from corrosion-resistant wires and either fitted on the soil surface or secured in an almost upright position on a slope or something similar. The wires in the wire netting are manufactured from heavy-duty steel, whereby this heavy-duty steel wire has a nominal strength of in the region of 1000 to 2000 N/mm<2> and steel wire may be used for this for stranded wires or spring steel wire. The wire netting is manufactured from rectangular, diagonal netting and it has a three-dimensional, mattress-like structure.
Patent TW-403980-B (TW)
Title: Wafer level chip scale package structure and the manufacturing method of the same
Inventor: LIU JOHN
IPC: H01L21/60
Filed: 1999-05-12
Granted: 2000-09-01
Abstract: A wafer level chip scale package structure is provided, which comprises a die on its surface with a plural of die pads; a first dielectric layer located on surface; a preset damascene pattern is formed in first dielectric layer; a first layer of the metal wiring is positioned in the damascene pattern of the first dielectric layer to connect the first pad; a second dielectric layer is positioned on first dielectric layer and on the surface of the first layer of metal wiring ; and a plural of via plugs are positioned in the second dielectric layer to connect the first layer of metal wiring. And form a redistribution pad on the exposed surface of via plugs on the second dielectric. This invention also provides a method for manufacturing wafer level chip scale package structure.
Patent TW-448238-B (TW)
Title: Method to prevent formation of void in silicon oxide layer
Inventor: TSAI CHENG-YUAN
IPC: C23C16/04
Filed: 1999-06-04
Granted: 2001-08-01
Abstract: This invention provides a method for the prevention of void formation in the silicon oxide layer of a semiconductor wafer. The semiconductor wafer consists of a silicon substrate and a shallow trench. The method proceeds firstly with a chemical vapor deposition process using tetraethyl orthosilicate (TEOS) as a reaction gas to form a silicon oxide layer on the surface of the wafer and fill the trench at one atm ambience. There is some residual reaction gas in the silicon oxide layer of the trench. In an oxygen-containing atmosphere, a thermal annealing process is carried out, which is followed by an etching process to remove the silicon oxide layer outside of the trench. A cleaning process is performed by employing a silicon oxide-containing etching solution to clean the wafer. The thermal annealing process is aimed to consume completely any reaction gas in the silicon oxide of the trench so that void formation in the silicon oxide layer of the trench due to the higher etching rate of the silicon oxide layer region with residual organic reaction gas during the cleaning process can be prevented.
Patent TW-516206-B (TW)
Title: Misalignment tolerant techniques for dual damascene fabrication
Inventor: PARIKH SUKETU A
IPC: H01L23/522
Filed: 1999-07-06
Granted: 2003-01-01
Abstract: The present invention provides integrated circuit fabrication methods and devices wherein dual damascene structures are formed which compensate for misalignment between the via pattern and the trench pattern by widening the trench at the point where the misalignment has occurred. Methods and devices are also provided wherein the trench width is not affected by misalignment thus preventing electrical shorts between closely spaced interconnect lines, this technique results in a reduction of the width of the via. These dual damascene structures utilize two dielectric layers (210 and 216) having similar etching characteristics. Additionally, a hard mask layer (218) and an etch stop layer (214) having similar etching characteristics are used in these structures such that the etching characteristics of the dielectric layers are dissimilar to the etching characteristics of the hard mask and the etch stop layer. A trench (224) is formed in the hard mask layer (218). A photoresist (226) having a via pattern (228) is deposited on the hard mask layer (218) such that the via pattern (228) overlays the trench (224). The via pattern is anisotropically etched through any hard mask layer portion (230) which protrudes inside via pattern (228). This inventive technique results in widening the trench (222) while maintaining the original diameter of the via, even when the via and trench patterns are misaligned. In another embodiment the technique results in a trench (330) which is not widened, thus preventing electrical shorts which can result from misalignment between a via pattern (322) and a trench pattern (326). Etching degradation of etch stop and photoresist layers is reduced because the trench and the via hole are formed simultaneously. Further embodiments of the present invention include the use of single layer masks, such as silicon-based photosensitive materials (418) which form a hard mask upon exposure to radiation. In additional embodiments, manufacturing systems (610) are provided for fabricating IC structures. These systems include a controller (600) which is adapted for interacting with a plurality of fabrication stations (620, 622, 624, 626, 628, 630 and 632).
Patent TW-429236-B (TW)
Title: Magnetic treatment apparatus for fluids and method for using same
Inventor: KAMIBAYASHI YOSHIJI
IPC: C02F5/12
Filed: 1999-07-14
Granted: 2001-04-11
Abstract: A magnetic unit 12 having yokes 15 made of magnetic material, with a permanent magnet on one end and a magnet treatment part 14 contacting a conduit 11 through which fluids move on the other end, is utilized for the purpose of treating fluids by exposure to the line of magnetic force. A plurality of said magnetic units 12 are arranged such that the N and S magnetic poles generated at the magnetic treatment parts 14 alternate along the flow path of the fluids.
Patent TW-478253-B (TW)
Title: Oscillator circuit
Inventor: GOLDMAN RICHARD
IPC: H03B5/20
Filed: 1999-09-10
Granted: 2002-03-01
Abstract: An oscillator circuit includes a current generator which supplies current to input terminals of capacitors in a trimmable capacitor array. The input terminals of the capacitors are held at a relatively constant voltage, and thus all of the current from the current generator passes through the desired capacitors of the capacitor array, thus minimizing the effect of parasitic capacitance.
Patent TW-427938-B (TW)
Title: Uni-directional open end wrench
Inventor: MACOR RICHARD J
IPC: B25B13/08
Filed: 1999-12-07
Granted: 2001-04-01
Abstract: An open end wrench head is described having four principal internal engaging surfaces arranged about an imaginary central axis with the first and second internal engaging surfaces positioned on a first jaw and the third and fourth internal engaging surfaces positioned on a second opposing jaw. The first and third internal engaging surfaces are substantially flat and parallel to the imaginary central axis. The second internal engaging surface diverges outward from the first internal engaging surface and fourth internal engaging surface diverges outward from the third internal engaging surface. When the present invention wrench head is turned in one direction it acts like a standard open end wrench, however, when the present wrench head is turned in the other direction or in a predetermined direction, two of the four internal engaging surfaces provide a substantial surface-to-surface contact with nut, bolt or fastener being turned, thereby increasing wrench strength and torque while reducing fastener deformation and wrench wear. The benefit of having a uni-directional increase in performance is that the total free play arc of wrench to fastener is kep to a minimum, and the flip-flop feature of the wrench in limited access situations is maintained.
Patent TW-448641-B (TW)
Title: A remote feeder reactance coil
Inventor: SCHMIDT RAINER
IPC: H01F27/28
Filed: 1999-12-14
Granted: 2001-08-01
Abstract: The invention relates to a remote feeder reactance coil (100) for energy input and output in signal transmission lines, as well as in signal transmission systems including signal transmission lines, where intermediate amplifiers are supplied with electrical energy via said signal transmission lines. In order to provide a reactionless connection of a high-frequency signal path and a low-frequency energy supply in signal transmission systems over an as large as possible frequency range, at the same time keeping the required manufacturing effort small, the invention provides a remote feeder reactance coil (100) including a primary winding (102) carrying a feed current as well as an attenuation circuit (118) in which at least the secondary winding (112), which is part of said attenuation circuit (118), or the primary winding (102) are of an electrically insulated conductive material, wherein said secondary winding (112) and said primary winding (102) interact through capacitive and/or inductive coupling.
Patent TW-490392-B (TW)
Title: Laminate film having gas barrier property
Inventor: SUGITA YUZO
IPC: B32B27/08
Filed: 1999-12-15
Granted: 2002-06-11
Abstract: The present invention relates to a laminate film consisting of a two-axis extended polypropylene film and a gas barrier polymer layer laminated onto at least one surface thereof. On the direction of the mechanical axis of said film and the direction perpendicular thereto, the heat contraction ratios at 150 DEG C are both smaller than 5%. Based on the use of the two-axis extended polypropylene film, the laminate film can eliminate the badness in appearance and finish, the drop in oxygen barrier properties accompanied with the badness, as well as the drop in gas barrier properties due to wrinkles resulted from the heat melt at the time of manufacturing a bag.
Patent TW-440627-B (TW)
Title: Bobbin case for sewing machine
Inventor: AKIYAMA TATSUHITO
IPC: D05B57/26
Filed: 2000-01-27
Granted: 2001-06-16
Abstract: In a loop taker of a lock stitch sewing machine having a lower thread bobbin which is vertically attached to and detached from the loop taker, the lower and upper threads are allowed to smoothly move when the upper thread is taken and while the stitching operation is performed. A sewing machine is a lock stitch sewing machine having a lower thread bobbin which is vertically attached to and detached from the loop taker, in which the flange 13b of larger diameter of a lower thread bobbin 13 having flanges 13a and 13b of different diameters is held in relation with the bottom of a bobbin carrier 12 with the peripheral edge 14a of a bobbin case 14, whereby a space is secured around the flange 13a of smaller diameter, and one of the flange 13b of larger diameter of the lower thread bobbin 13 and the peripheral edge 14a of bobbin case 14 has a ring-shape stepped portion 13c provided with the other.
Patent TW-445359-B (TW)
Title: Gas switch operation device
Inventor: CHEN JIUN-NIAN
IPC: F23N5/00
Filed: 2000-01-26
Granted: 2001-07-11
Abstract: This invention provides a gas switch operation device, comprising: a main body and a lid body. The main body is provided with a gas induction pipe, a containing chamber, and a gas outlet pipe at appropriate locations. The gas induction pipe is provided at a side of the containing chamber. The gas induction pipe and the gas outlet pipe are communicated with the containing chamber through connection of a passageway respectively, so that a shutter can be placed in the containing chamber. The gas induction pipe is pivotally provided with a solenoid valve set at the front end, pivotally provided with a pushing rod set at a rear end, and provided with a gas joint at a midsection for gas to enter. On the side of the gas induction pipe, a protruding ear part is pivotally provided for a levering element to be pivotally provided. The lid body is pivotally connected to the main body, and a axle rod, a spring, a driving rod, a cam, a pushing plate, a spring, a driving board, and a shutter, etc. are provided between the lid body and the main body in sequence. A recess groove is formed between the lid body and the main body and close to the cam for the free end of the levering element to insert through therein, such that the rotation of the axle rod can make the driving rod located therein push the cam to move inwards along the axial direction of the axle rod, make the cam force the free end of the levering element move inwards, and further make the levering element rotate with the protruding ear part of the gas induction pipe as rotational center, so as to achieve making the spindle rotate in a direction orthogonal to the rotation direction of the levering element, and then make the pushing rod set to drive the solenoid valve to move, making the gas flow into the shutter and then supply the flow rate required by the gas outlet pipe.
Patent TW-459208-B (TW)
Title: Method of and apparatus for processing image, recording medium, and program
Inventor: OHBA AKIO
IPC: G06T15/00
Filed: 2000-02-29
Granted: 2001-10-11
Abstract: After a normal texture expressing process (texture mapping and shading) has been carried out on a polygon to be processed, a polygon shadow rendered on a shadow plane (reference shadow plane (150)) is subjected to texture mapping and rendered on a screen (176) (procedure 1), and thereafter the polygon shadow formed on the object is rendered on the shadow plane (150) (procedure 2). The above process is carried out by Z-sorting with the light source (52) as the viewpoint, as indicated by the arrow A.
Patent TW-473871-B (TW)
Title: Manufacturing method of semiconductor device
Inventor: KIKUCHI TAKESHI
IPC: H01L27/115
Filed: 2000-03-13
Granted: 2002-01-21
Abstract: The present invention relates to a method of manufacturing a semiconductor device; which comprises the steps of forming, upon a substrate having a plurality of raised sections on the surface, a polysilicon film so as to fill up recesses formed between these raised sections and, through patterning, forming a polysilicon line therefrom; forming a natural oxidation film or an oxide film with a thickness of 1 nm to 3 nm on the surface of said polysilicon line; forming an additional polysilicon film by growing polysilicon thereon, and thereafter etching back said additional polysilicon film; forming an insulating film thereon, and thereafter forming sidewalls from said insulating film through etching back; forming a diffusion region on said substrate; and forming a silicide film over said polysilicon line. According to the present invention, a silicide film can be formed evenly over a polysilicon line that is formed on a stepped substrate so that, with this technique, semiconductor devices having excellent characteristics and reliability can be manufactured with a high yield.
Patent TW-548364-B (TW)
Title: Method for manufacturing resin-impregnated endless belt structures for papermaking machines and similar industrial applications
Inventor: MCGAHERN DESMOND
IPC: D21F3/02
Filed: 2000-05-03
Granted: 2003-08-21
Abstract: A resin-impregnated endless belt for a long nip press or calender of the shoe type, or for other papermaking and paper-processing applications, has an open base fabric in the form of an endless loop with an inner surface, an outer surface, a machine direction and a cross-machine direction. A coating of a polymeric resin is on the inner surface of the base fabric. The polymeric resin impregnates and renders the base fabric impermeable to liquids, and forms a layer on the inner surface thereof. The coating is smooth and provides the belt with a uniform thickness. The belt is manufactured by mounting the base fabric about a first roll and a second roll, which are separated to place the base fabric under tension in the machine direction. A conveyor belt is placed within the base fabric at a preselected distance from the inner surface thereof. The conveyor belt and base fabric are run at a common speed, and, starting at a lateral edge of the base fabric, polymeric resin is dispensed onto the base fabric over the conveyor belt from a dispenser. The conveyor belt and dispenser are moved transversely across the base fabric as the latter is coated in a spiral fashion.