baber/WOPTO huggingface dataset:
Patent JP-S63246876-A (JP)
Title: Junction field-effect transistor
Inventor: TAKIGAWA SHINICHI
IPC: H01L29/80
Filed: 1987-04-02
Abstract: PURPOSE:To obtain transconductance at a high speed, by forming a stripe shaped ridge, a one-conductivity type high concentration semiconductor at a part other than the ridge, a one-conductivity type semiconductor and a semiconductor having an opposite conductivity type with respect to the one-conductivity type on a semi-insulating substrate. CONSTITUTION:N<+>-InP layers 2 and 2' are formed at parts other than a ridge on an semi-insulating InP substrate, on which the thin ridge is formed. N-In0.53 Ga0.47As 3 is formed so as to embed the ridge. Furthermore, P<+>-In0.53Ga0.47As 4 is formed at the upper part of the ridge. Source and drain electrodes 6 and 7 are formed on the surfaces of the N<+>-InP layers 2 and 2'. Namely, the gate 4 is located at the side opposite to the ridge with the channel 3 in-between. Therefore, the gate length and the distance between the source and the drain (=width of the ridge) can be independently determined. When the width of the ridge is made shorter than the gate length, a high speed operation can be obtained. Since each layer can be formed by using an LPE (liquid phase epitaxial growth) method, a high quality crystal is obtained. Thus, the In0.53Ga0.47 As layers having intrinsic high speed are obtained.
Patent JP-S536529-A (JP)
Title: Burst flag signal generator
Inventor: KUDOU YUKINORI
IPC: H04N9/455
Filed: 1976-07-08
Abstract: PURPOSE: To enable large scale integration and to reduce the cost, by developing the burst flag signal BF with digital processing with a simple circuit configuration. 
     COPYRIGHT: (C)1978,JPO&Japio
Patent JP-S63248062-A (JP)
Title: Zinc alkaline battery
Inventor: TAKADA KANJI
IPC: H01M4/06
Filed: 1987-04-02
Abstract: PURPOSE:To remarkably reduce an amalgamation rate of the negative electrode of a zinc alkaline battery by using a kind selected from a group of a specific alkylbenzenesulfonate and a salt obtained by neutralizing it with alkali metal as the corrosion inhibitor of a negative active material. CONSTITUTION:At least a kind selected from a group of a specific alkylbenzenesulfonate indicated in the formula and a salt obtained by neutralizing it with alkali metal is used as the corrosion inhibitor of the negative electrode of a zinc alkaline battery in which alkaline aqueous solution mainly comprising potassium hydroxide or sodium hydroxide is used as electrolyte, zinc or zinc alloy as negative active material, and manganese dioxide, silver oxide, oxygen, nickel oxyhydroxide, or mercuric oxide as positive active material. In the formula, the number of carbon in alkyl group (R) is preferable to limit to 6-30. The corrosion resistance of zinc negative electrode is thereby increased and the zinc alkaline battery in which an amalgamation rate is low and practicality is high can be obtained.
Patent JP-H06264457-A (JP)
Title: Arrangement structure of reinforcement in basement slab
Inventor: YOSHIZAKI MASAHIRO
IPC: E02D27/01
Filed: 1993-03-15
Abstract: PURPOSE:To facilitate the arrangement of reinforcements in a slab part overhung in cantilevered shape at a footing beam, by jointing the open end parts of the reinforcements in a slab to the side of the footing beam, each of which reinforcements is formed in the shape of a letter U laid at side-view. CONSTITUTION:A reinforcing bar unit 1 for a footing beam is composed of a plurality of stirrups 3, 3... and a plurality of horizontal reinforcements 4, and the stirrups 3 are arranged at the same interval that horizontal reinforcements 6 in a slab part are arranged. The horizontal reinforcement 6 laid in slab concrete 7 overhung in cantilevered shape is bent almost in the shape of a letter U laid, and upper and lower straight line parts 8, 9 and a bent part 10 are formed. The side of the open end part of the horizontal reinforcement 6 is arranged so as to be closely along vertical bar parts 11, 11 on the stirrup 3 and horizontal positioning is done. The straight line parts 9 on the horizontal reinforcements 6 each are placed on spacer blocks 13, the side of the open end part of the straight line parts 8 is placed on positioning bars 14 on the stirrups 3, 3, and vertical positioning is done. Furthermore, the outer side part of the straight line part 8 is supported at a fixed height by the bent part 10.
Patent JP-H06268231-A (JP)
Title: Floating-gate non-volatile semiconductor memory device
Inventor: SUGIYAMA HISANOBU
IPC: H01L29/788
Filed: 1993-03-16
Abstract: PURPOSE:To provide a semiconductor memory in which a high efficiency of minority carrier injection into the floating gate is achieved at a very low voltage. CONSTITUTION:Electrons supplied keeping a semiconductor substrate 12 and a diffusion layer both forward biased are accelerated by a depletion layer produced by reversely biasing all the semiconductor substrate 12, a control gate 18, and a source/drain. The energy band of the semiconductor substrate 12 is curved by the depletion layer, and when a curve phiS of the energy band grows larger than an energy barrier EB between the semiconductor substrate 12 and the gate oxide film 15, electrons 19 accelerated by a depletion layer are injected into a floating gate 16.
Patent JP-2000273459-A (JP)
Title: Method and device for removing carbon adhered to upper portion of carbonization chamber of coke oven
Inventor: HASEGAWA YUTAKA
IPC: C10B43/04
Filed: 1999-03-25
Abstract: PROBLEM TO BE SOLVED: To enable the efficient removal of carbon which is adhered to the charging openings of a coke oven carbonization chamber and causes the stop of pushed coke, the clogging of the pushed coke, or the like, without causing the removal of carbon in brick joints. SOLUTION: This method for removing carbon adhered to the upper portions of the carbonization chambers of a coke oven comprises jetting refractory powder 36 and flames 37 on the adhered carbon 35 grown on the inner wall surface of the charging holes 15a of the carbonization chambers of the coke oven by the use of burners 2, thereby heating the adhered carbon at 1,000-1,400 deg.C, and simultaneously adding the collision force of a refractory powder 36 to the adhered and heated carbon 35 to peel the adhered carbon 35 from the inner wall surface.
Patent JP-H05247432-A (JP)
Title: Adhesive composition
Inventor: FUJIKI HIRONAO
IPC: C08F299/08
Filed: 1992-03-03
Abstract: PURPOSE:To obtain a silicone adhesive compsn. very excellent in resistance to gasoline. CONSTITUTION:A high mol.wt. fluorosilicone polymer contg. at least 30mol%, on average per molecule, of units of the following formula (1): RfCH2CH2(CH3) SiO- (1) [Rf is a 1-8C perfluoroalkyl group] and blocked with vinyl groups at both terminals of the molecular chain, and a low mol.wt. fluorosilicone polymer contg. at least 30mol%, on average per molecule, of units of the above- mentioned formula (1) and at least 3 units, on average per molecule, of the following formula (2): CH2=CH(CH3)SiO- (2) are blended with an organohydrogenpolysiloxane and an organosilane or organopolysiloxane contg. at least one SiH group and at least one kind of an oxirane group, a dialkoxysilyl group and a trialkoxysilyl group in the molecule to prepare an adhesive compsn.
Patent JP-S59207459-A (JP)
Title: Magnetic disk
Inventor: YOKOTA YUUJI
IPC: G11B17/028
Filed: 1983-05-12
Abstract: PURPOSE:To reduce the size and thickness of a magnetic disk device by setting a hub holder arm almost rectangularly to the loading direction of a magnetic disk cassette by means of a hub holder and at the same time attaching the hub holder with inclination of a prescribed angle to the magnetic disk cassette surface. CONSTITUTION:A hub holder arm 2 is set almost rectangularly to the loading direction of a magnetic disk cassette 5, and a hub holder 10 is formed into a thin disk shape and attached via a gimbal spring 4. A straight line passing through the center of the holder 10 and a rectangular to the holder 10 and the axial line of a spindle 14 have an inclination of a prescribed angle theta1. As a result, an inclination of a prescribed angle theta2 is produced between a plane including the holder 10 and the upper surface of the cassette 5. Thus the thickness of the holder 10 can be extremely reduced, and the overall size and thickness can be resuced for a magnetic disk device.
Patent JP-S567142-A (JP)
Title: Information processor
Inventor: TAJIMA KIYOSHI
IPC: G10L15/00
Filed: 1979-06-27
Abstract: PURPOSE: To reduce the load I/O port 22 as well as realize the multiple functions of the processor, by adding the aural signal source and at the same time securing the input of the aural data in the same way as the case of operation of the keyboard.  
     CONSTITUTION: The aural signal source, consisting of microphone 30, amplifier 31, BPF32, multiplexer 33 and A/D converter 34 each, is added. Thus the input voice is supplied directly to input lines I 1 WI 4  of I/O port 22 in the form of the digital signal and the parallel signal with every band. The aural data thus supplied via lines I 1 WI 4  is compared with the reference pattern of the model voice stored in the memory. Then the voice having the smallest difference, i.e., the most similar voice is selected. And this selection result is handled in the same way as the case in which key switches K'... of keyboard 23 are operated, and thus used as the input to the information processor. 
     COPYRIGHT: (C)1981,JPO&Japio
Patent JP-S559358-A (JP)
Title: Manufacturing method of circular pedestal provided on formed positive electrode
Inventor: TSUBURAYA YOSHITANE
IPC: H01M4/06
Filed: 1978-07-04
Abstract: PURPOSE:To prevent cracks in a thinly formed positive electrode and to enhance contact with a  pedestal by forming a metal plate whose main components are iron and nickel is formed and annealed, thereafter treating its surface by mineral acid, at the time of manufacturing a circular  pedestal provided on the perphery of a formed positive electrode. CONSTITUTION:A mixture of positive-electrode materials such as silver monoxide, silver dioxide,  manganousoxide, mercurous oxide, and nickel peroxide, and the like, and a conductive agent  which is introduced as necessary is set and compressed in a metal-mold frame 6 and a cylindrical  frame 7 together with a ciruclar pedestal 5 with an L-shaped cross section, thereby a positive electrode 9 whose thickness is 1mm and less is made. The pedestal 5 is made by machining a metal  plate whose components are iron and nickel, and after annealing it, its surface is treated by  mineral acid, to eliminate metal oxides, metal carbide, and the like. For example, the pedestal 5 is  formed from stainless steel whose thickness is 0.1 to 0.2mm, by heating it red hot to 700 to  1,000 deg.C, then annealing it, and treating its surface by immersing it in hydrocholric acid or nitric  acid of about 1/4 normal for about 5 minutes. By this method, a formed positive electrode with  thickness of 1mm and less which has no crack or breakage and small inner resistance can be  obtained.
Patent JP-S526582-A (JP)
Title: Method of measuring plutonium content in reactor fuel
Inventor: YAMAMOTO TAKANORI
IPC: G21C17/06
Filed: 1975-07-04
Abstract: PURPOSE: To non-destructively and repidly measure the plutonium content in the fuel used in the breeder. 
     COPYRIGHT: (C)1977,JPO&Japio
Patent JP-H05279495-A (JP)
Title: Transparent polyimide film
IPC: C08J5/18
Filed: 1992-04-03
Abstract: PURPOSE:To obtain the subject film good in ultraviolet and visible light transmittance, transparency and heat resistance by polymerizing 3,3'-oxydiphthalic dianhydride with 4,4'-oxydianiline in a solvent, casting the resultant polymer solution and then carrying out the cyclodehydrating reaction. CONSTITUTION:The objective transparent polyimide film is obtained by introducing N-methyl-2-pyrrolidone and 3,3'-oxydiphthalic dianhydride expressed by formula I into a three neck flask equipped with a reflux condenser, a nitrogen introduction device and a stirrer, introducing nitrogen gas, stirring the reactional mixture, dissolving the 3,3'-oxydiphthalic dianhydride, adding 4,4'-oxydianiline expressed by formula II thereto, keeping the mixture at <=40 deg.C, advancing the polymerizing reaction for 24hr, providing a polyamic acid solution, then casting the prepared solution onto a glass plate, drying the cast solution by heating, subsequently immersing the dried film in a mixture solution of benzene- pyridine-acetic anhydride at 60 deg.C temperature for 24 hr and carrying out the cyclodehydrating reaction. This film has a unit expressed by formula III [(n) is a positive integer], >=80% ultraviolet and visible light transmittance and >=500 deg.C temperature of 5% weight loss in thermogravimetric analysis.
Patent JP-S62238633-A (JP)
Title: Probe for measuring electric characteristic of semiconductor wafer
Inventor: YANAGIHARA HIROSHI
IPC: H01L21/66
Filed: 1986-04-09
Abstract: PURPOSE:To make it possible to measure accurate electric characteristics in a high frequency region, by providing transmission paths in parallel on a substrate, upheaving the tip parts, forming space parts beneath the upheaved parts, or filling the spaces with electric insulating elastic body. CONSTITUTION:In a probe 10, transmission paths 12 comprising Cu are provided in the longitudinal direction on a dielectric substrate 11 comprising alumina with an interval of 200mum being provided. The tip part of each transmission path 12 is upheaved to a height of 80mum so that the side surface forms a trape zoidal shape. An upper surface 14 of each upheaved part 13 is made to be a contact surface. A space part 15 is formed benetath each upheaved part 13. The space part can be filled with an electric insulating elastic body 28 compris ing light sensitive polyimide. In the measurement of electric characteristics, the contact part of each transmission path 12 is not crushed when it is contacted with a pad 2 for ICs, LSIs and the like on a wafer to be measured. Secure, stable contact is always provided. Thus, the measurement of the electric characteristics in a high frequency region can be accurately performed positively.
Patent JP-H10249011-A (JP)
Title: Game machine
Inventor: TAKEUCHI TAKAHIRO
IPC: A63F7/02
Filed: 1997-03-14
Abstract: PROBLEM TO BE SOLVED: To provide a ready-to-win action, which is the combination of picture patterns on a picture pattern display device arranged to a game machine, for especially letting a player be interested. SOLUTION: When a 1st picture pattern display part H1 starts the variation of displayed picture patterns and there is possibility in the occurrence of specified play state because of the stop of one picture among the picture patterns on 1st picture pattern display parts L1, L2 and L3 at least, concerning this game machine, one of picture patterns displayed on the 1st picture pattern display parts L1, L2 and L3 under the variation of picture patterns is erased at least, afterwards, stopped picture patterns on 2nd picture pattern display parts M1 and M2 (or M3) are concerned and when the combination of this stopped picture with the picture pattern already stopped and displayed on the 1st picture pattern display part shows the combination of specified picture patterns, the specified play state advantageous for the player is let occur.
Patent JP-H03278853-A (JP)
Title: Expolosion-proof far infrared heater
Inventor: SHIMOMURA TOKIICHI
IPC: B05D3/02
Filed: 1990-03-29
Abstract: PURPOSE:To perform heating and drying in an windless state by passing a heating fluid through a heat transfer member coated with far infrared ray emitting ceramics to heat the heat transfer member. CONSTITUTION:Fibers 2 to be dried are trained over respective guide rollers 11, 12 to be allowed to run. When a heat transfer pipe 1 is heated by the hot water passing through said pipe 1, far infrared rays are emitted from the heat transfer pipe 1 and applied to the fibers 2 running at low speed to dry the fibers 2. The quantity of the radiant heat from the heat transfer pipe 1 is controlled by controlling the temp. of the hot water passing through the heat transfer pipe 1. When the heating temp. of the heat transfer pipe 1 is raised, heated oil is used as a heating medium. By this method, the transfer quantity of radiant heat can easily be changed and drying capacity can be controlled.
Patent JP-S60227382-A (JP)
Inventor: KOSHIYA AKIHIRO
IPC: H01T13/20
Filed: 1984-04-25
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。
Patent JP-H03283289-A (JP)
Title: Driving circuit for inverter microwave oven
Inventor: OKAMOTO MITSUHISA
IPC: H05B6/68
Filed: 1990-03-29
Abstract: PURPOSE:To use a low-voltage DC power source as power source and also make a driving circuit compact at reduced cost and also achieve high output by adjusting the leakage inductance of a step-up transformer and the value of the condensor of a voltage doubler rectifier circuit or the duty cycle of a switching element so that half the cycle of the waveform of a current passed through the switching element is set equal to the duty cycle. CONSTITUTION:The current waveform of a switching element is vibrated at characteristic frequency decided by the leakage inductance of a step-up transformer 3, a voltage doubler condensor 7 and circuit resistance. Half the cycle of the characteristic frequency is made equal to the ON time of the switching element by adjustment of the value of the leakage inductance of the step-up transformer or the ON time of the switching element, whereby circuit output power being output is maximized.
Patent JP-H02258427-A (JP)
Title: Constant-speed running device for vehicle
Inventor: ARIMA MANABU
IPC: B60W30/00
Filed: 1989-03-31
Abstract: PURPOSE:To prevent an overshoot when an acceleration command is completed by temporarily controlling a clutch means provided between an engine output adjusting means and an actuator driving it at the disengaged state when the acceleration command is completed during constant-speed running. CONSTITUTION:The output of an engine is adjusted by a means A, and this means A is driven by an actuator B. The target car speed of a vehicle is set by a means C, and the set car speed is changed to the acceleration side or reset by a means D via the action of a driver. The actual car speed is detected by a means E, and the actuator B is controlled by a means F so that the vehicle is kept at the constant-speed running state based on the difference between the detected car speed and the target car speed. A clutch means G is arranged at the connection section of the actuator B and the means A. The clutch means G is temporarily controlled at the disengaged state by a means H when an acceleration command is completed during constant-speed running.
Patent JP-H06295986-A (JP)
Title: Manufacture of semiconductor device
Inventor: TSUYUKI MASAHIKO
IPC: H01L21/822
Filed: 1993-04-08
Abstract: PURPOSE:To form a resistor with high precision wherein the resistance value per unit area is high, by introducing impurities into the junction part to other wirings, and forming an effective area of a polycrystalline silicon resistor. CONSTITUTION:A silicon oxide film 1-2 is formed on a semiconductor substrate 1-1, polycrystalline silicon 1-3 is formed on the film 1-2, an oxide film 1-4 is formed by dry oxidation, a photoresist pattern 1-5 is formed on the film 1-4, and primary impurities are introduced. After the photoresist 1-5 is eliminated and RTA treatment is performed, a silicon oxide film 1-8 is formed on the polycrystalline silicon oxide film 1-4, a photoresist pattern is formed, the silicon oxide film 1-8 is worked into a prescribed form, and secondary impurities are introduced at 900 deg.C. Hence the silicon oxide film 1-8 is eliminated, and a pattern is formed on the polycrystalline silicon, which is worked into a prescribed pattern. Thus the resistance value per unit area can be formed with high precision, and regions different in the resistance value can be formed in the same polycrystalline silicon.
Patent JP-2000276081-A (JP)
Title: Led array driving device and image forming device
Inventor: SHIRAISHI MITSUO
IPC: G09F9/33
Filed: 1999-03-25
Abstract: PROBLEM TO BE SOLVED: To stabilize transfer operation and to lower the cost by making thyristors for transfer illuminate in order and light emitting thyristors illuminate in order according to an external control signal. SOLUTION: A transfer thyristor for a 1st bit is turned off by supplying a transfer clock Φ1 (B) and a start pulse ΦS (A) so that the gate-cathode potential of the transfer thyristor for the 1st bit is below a specific value for a specific time up to T1 after the start of transfer. The gate potential of a light emitting thyristor for the 1st bit is supplied only by the start pulse Φ and the light emitting thyristor for the 1st bit is turned on in the specific time T1.
Patent JP-S59206458-A (JP)
Title: Polyester composition
Inventor: OKAMOTO TAKASHI
IPC: C08K3/34
Filed: 1983-05-10
Abstract: PURPOSE:To provide the titled compsn. having excellent moldability, surface gloss and mechanical properties, by blending a specified nucleating agent, a bisphenol/alkylene oxide addition condensate and a reinforcing fiber with a polyester. CONSTITUTION:0.05-10pts.wt. at least one nucleating agent selected from an inorg. compd. having an average particle size of 50mu or below (e.g. mica), an org. compd. having carboxylate metal salt groups and a high molecular compd. having carboxylate metal salt groups, 0.5-20pts.wt. bisphenol/alkylene oxide addition condensate having an average MW of 500-20,000 or compd. wherein part or the whole of OH groups in the condensate is converted into ether or ester linkages, and 0-150pts.wt. reinforcing fiber (e.g. glass fiber) are blended with 100pts.wt. polyethylene terephthalate or polyester composed of at least 80mol% of an ethylene terephthalate repeating unit.
Patent JP-H08279464-A (JP)
Title: Semiconductor device and its manufacture
Inventor: FUSHIMI HIROSHI
IPC: H01L29/861
Filed: 1995-04-07
Abstract: PURPOSE: To inhibit growth as current leakage changes in time at a low-voltage side. CONSTITUTION: An n-type compound semiconductor crystal layer as a collector layer, a p-type compound semiconductor crystal layer as a base layer which has carbon introduced as a p-type impurity, and an n-type compound semiconductor crystal layer are respectively formed by the epitaxial growth method, and only hydrogen atoms under the measurable limit (5×10<18> cm<-3> ) are contained in each compound semiconductor crystal layer. In this way, in a condition (b) where the hydrogen content is under the measurable limit, the leakage current does not increase even after an operating time T.
Patent JP-H07273295-A (JP)
Title: Formation method of electrode of microdevice
Inventor: ONO TOSHIAKI
IPC: H01L21/822
Filed: 1994-03-28
Abstract: PURPOSE:To provide a method in which electrodes are formed in a substrate state without dividing an element into individual elements when a small and thin microdevice is manufactured. CONSTITUTION:Through holes 2 are formed in parts, of a silicon substrate 1, in which external electrodes are to be formed. A thin-film pattern 3 is formed in such a way that electrode extraction parts of the thin-film pattern 3 come into contact with the through holes. A metal for the external electrodes is filled into the through holes 2. A metal layer 7 is formed. Both faces of the substrate are set to continuity. The silicon substrate 1 is cut in such a way that the external electrodes are exposed to the outside.