Patent SG-11201407657Y-A (SG)
Title: Aqueous clean solution with low copper etch rate for organic residue removal improvement
Inventor: JENQ SHRANE NING
IPC: H01L21/302
Filed: 2013-05-17
Abstract: (12) INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property Organization International Bureau (43) International Publication Date 21 November 2013 (21.11.2013) WIPOIPCT (10) International Publication Number WO 2013/173743 A3 (51) International Patent Classification: H01L 21/302 (2006.01) (21) International Application Number: (22) International Filing Date: (25) Filing Language: (26) Publication Language: PCT/US2013/041634 17 May 2013 (17.05.2013) English English (30) Priority Data: 61/648,937 61/695,548 18 May 2012 (18.05.2012) US 31 August 2012 (31.08.2012) US (71) Applicant: ADVANCED TECHNOLOGY MATERI­ ALS, INC. [US/US]; 7 Commerce Drive, Danbury, CT 06810 (US). (72) Inventors: JENQ, Shrane, Ning; 4F., No. 20, Ln, 421, Zhonghe Rd., Taipei County, Yonghe City, Taiwan, 234 (CN). BOGGS, Karl, E.; 74 Carol Drive, Hopewell Junc­ tion, NY 12533 (US). LIU, Jun; 13 Locust Lane, Unit 48, Brookfield, CT 06804 (US). THOMAS, Nicole; 31 Violet- wood Circle, Marlborough, MA 01752 (US). (74) Agent: FUIERER, Tristan; Moore & Van Allen PLLC, P.O. Box 13706, Research Triangle Park, NC 27709 (US). (81) Designated States (unless otherwise indicated, for every kind of national protection available)'. AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (84) Designated States (unless otherwise indicated, for every kind of regional protection available)'. ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG). Published: — with international search report (Art. 21(3)) — before the expiration of the time limit for amending the claims and to be republished in the event of receipt of amendments (Rule 48.2(h)) (88) Date of publication of the international search report: 20 February 2014 •t i> m i> i-H cn i-H o CJ o & (54) Title: AQUEOUS CLEAN SOLUTION WITH LOW COPPER ETCH RATE FOR ORGANIC RESIDUE REMOVAL IM­ PROVEMENT (57) Abstract: A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contamin­ ants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions include at least one quaternary base, at least one amine, at least one corrosion inhibitor, and at least one solvent. The composition achieves highly effica­ cious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device while being com­ patible with barrier layers.