baber/WOPTO huggingface dataset:
Patent JP-H09316942-A (JP)
Title: Water supply device
Inventor: ARAKI OSAMU
IPC: B05B15/06
Filed: 1996-06-03
Abstract: PROBLEM TO BE SOLVED: To prevent the residual water from freezing and prevent damage of members in advance, by providing a push button of a valve body, by which a water passage is opened and a drain valve discharging the water in the water passage. SOLUTION: A diaphragm valve 11 which opens when the water in a pressure chamber S is drained and closes when water is accumulated in the chamber S, is equipped in the inside of a cut-off valve unit 10, at the lower part of a water supply body 2. A drain valve 44 and an opening button 45 are provided in the cut-off valve unit 10. The opening button 45 is pushed to open the diaphragm valve 11, in the state the thumb nut 44a is loosened and released to favorably discharge the water in the water passage R1 and the water in a shower hose through the drain valve 44 to the outside and also favorably remove the residual water in the temperature adjustment part side connected to the water passage R1. Freezing at night is prevented in advance and damage resulting from freezing of respective members can be favorably prevented.
Patent JP-S5687102-A (JP)
Title: Detector for load circuit disconnection of process output device
Inventor: MARUYAMA TOSHIHIRO
IPC: G01R31/02
Filed: 1979-12-19
Abstract: PURPOSE:To detect the disconnection of a load circuit with a simple constitution, by detecting the change of the primary side impedance caused by the conduction of anogher voltage control element when the control voltage applied to a voltage control element exceeds the prescribed limit by the disconnection of the load circuit. CONSTITUTION:The output device 6 receives the digital output from the CPU which is not shown in the diagram and then converts the output into the analog current quantity to supply it to the process 8 to be controlled. At the same time, the device 6 amplifies the input signal by the FET63 and the transistor TR64 and then applies the amplified input to the process 8. In case when a disconnection occurs in a load circuit, no current flows to the process 8 to extinguish the both- end voltage V3 of the resistance RS. As a result, the operational amplifier circuit 62 saturates the output voltage VO in order to increase the voltage VS and then turns on the voltage control element FET71. The on and off of the FET71 is detected by the monitor circuit 73 via the pulse transformer 72. In such way, the disconnection of a load circuit can be detected with a simple constitution.
Patent JP-S6142999-A (JP)
Inventor: MINAGAWA MASARU
IPC: H05K7/02
Filed: 1984-08-07
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。
Patent JP-S648675-A (JP)
Title: Formation of schottky gate
Inventor: OSAWA MASARU
IPC: H01L29/80
Filed: 1987-06-30
Abstract: PURPOSE:To compose a gate structure in a trapezoidal shape, to prevent a gate metal of a second layer and succeeding layers from getting into contact with a substrate, and to form a Schottky gate having high reliability by sequentially reducing the diameter of an evaporation source of the gate metal according to the sequence of depositing the metal. CONSTITUTION:After a gate forming photoresist pattern 3 is formed by a photocomposing technique on an S.I.GaAs substrate 1 having an active layer 2, the thickness of the layer 2 is regulated by etching the exposed GaAs section to form an etching face 4. Then, when a first layer gate metal 5 is deposited, a depositing flow 9 is formed by a deposition source 11 having a maximum diameter. Thereafter, a second layer gate metal 6 is deposited by a deposition source 12 in which the irradiation region of an electron beam is narrowed as compared with the metal 5. Subsequently, the electron beam diameter is sequentially narrowed to narrow the width of the deposition flow, and a gate of trapezoidal shape which is sequentially increased in its diameter from the substrate 1 is formed.
Patent JP-S5955103-A (JP)
Inventor: IWANAGA KENJI
IPC: A01B35/00
Filed: 1982-09-21
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。
Patent JP-H1147316-A (JP)
Title: Golf club head
Inventor: SHEETS JEFFREY D
IPC: A63B53/04
Filed: 1998-05-29
Abstract: PROBLEM TO BE SOLVED: To prevent a golf club head from being embedded into the ground surface while hitting a golf ball by forming a reentrant projection extending between a face and a rear surface on the rear surface of the club head. SOLUTION: The wood type golf club head provided with a metallic body 4 having a front surface 6, the rear surface 8, the front part ball fitting face 10 and the curved rear surface 12 is formed with the projection 16 in a transverse direction extending between the ball fitting face 10 and the rear surface 12 on the rear surface 8 of this body 4. A pair of dents (recesses) 18 are formed on the sides facing each other of this projection 16. The dents 18 on the respective side are extended to the terminal place T just before the face 10 from the rear surface 12 of the head. The reentrant part 22 of the projection 16 is extended along the longitudinal direction of the projection 16. A front part 16a parallel with the ground surface is formed adjacently to the bottom edge of the face 10.  The sinking of the club into the ground surface while a golf swing is made so as to hit the golf ball riding on the ground surface is prevented by this front part 16a.
Patent JP-S6222626-A (JP)
Inventor: YOSHIOKA HIDEAKI
IPC: A61B5/04
Filed: 1985-07-23
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。
Patent JP-S648739-A (JP)
Title: Two-way amplifier supervising system
Inventor: NORO SHINICHI
IPC: H04L5/14
Filed: 1987-07-01
Abstract: PURPOSE:To send fault information of each amplifier to the center without making an effective transmission frequency band narrow by using a pilot signal of a 2-way amplifier as a carrier for the transmission of fault information. CONSTITUTION:When a fault takes place in an outgoing amplifier FTA1 of a 2-way amplifier 1 of a 2-way amplifier group, the output level of an outgoing pilot PL1 is deteriorated. An outgoing level detection circuit 11 detects the level decrease and discriminates it as a fault and gives a detection signal L1 to an ID number generator 12A, which is driven by the detection signal L1 to generate a binary code ID1 able to identify the amplifier 1 and to supply it to a signal coupling means 13. The coupling means 13 coupling means 13 couples an output of an incoming amplifier RTA1 of the amplifier 1 to an incoming pilot PL2 to output a coded pilot signal PL2D to a center 100.
Patent JP-S5788343-A (JP)
Title: Nondestructive detection of integranular corrosion sensitivity
Inventor: FUKAI AKIRA
IPC: G01N27/26
Filed: 1980-11-25
Abstract: PURPOSE:To make the nondestructive evluation of grain boundary type stress corrosion cracking sensitivity produced in a deposition reinforcement type Ni- based alloy possible by performing constant potential electrolysis at the overpassive state potential at the anoidic polarization curve of the alloy by using a small sized electrolytic cell and a constant potential electrolytic device. CONSTITUTION:A small sized electrolytic cell 2 is mounted to a test body 7 by using an elastic gasket 3 and fixing fittings to prevent leakage of electrolyte 1. A capillary tube packed with glass fibers is used for a Luggin capillary tube 5, and a dilute aq. sulfuric acid soln. of 1-4 normal is used for the electrolyte 1. With the body 7 as anode, constant potential electrolysis is carried out with a constant potential electrolytic device 8 in a potential region of 1.2-1.5V in an over-passive state region at the anodic polarization curve of an alloy by using a counter electrode 4 and a reference electrode 6, whereby intergranular type stress corrosion cracking sensitivity is evaluated from the degree of intergranular erosion. Thereby, the evaluation corresponding to stress corrosion cracking under actual conditons of high temp. water or the like is accomplished non- destructively in a short time.
Patent JP-H0672880-A (JP)
Title: Cataplasm for softening horneum
Inventor: YAMAZAKI KAZUO
IPC: A61P17/16
Filed: 1993-07-02
Abstract: PURPOSE:To obtain the subject cataplasm having strong treating action on hyperkeratosis wart, callosity, etc., high analgesic effects on the affected part as well as their long acting effects by blending salicylic acid with a local narcotic agent. CONSTITUTION:The objective cataplasm is obtained by blending salicylic acid with a local narcotic agent (e.g. dibucaine or lidocaine). This cataplasm is preferably prepared in the form of an adhesive plaster, plaster, fomentation, etc., by generally using various bases of salicylic acid, local narcotic agent and styrene-isobutylene copolymer rubber. Furthermore, the local narcotic agent is preferably blended into the base of cataplasm in an amount of 0.1-5%.
Patent JP-S6223890-A (JP)
Title: Wave drift power reducing device for marine structure
Inventor: YAMAMOTO SHIGERU
IPC: E02B17/00
Filed: 1985-07-24
Abstract: PURPOSE:To reduce a wave drift power acting on a marine structure, by mounting resistance members rotatable about a substantially vertical shaft to the marine structure, which resistance members generate resistance to a water current from one side different from that from the opposite side. CONSTITUTION:A marine structure 10 is constituted of a structure body 11 rectangular in plan and many support buoyancy members 12 provided under the body 11. The lower portion of each buoyancy member 12 is submerged under a water surface L, so that the body 11 may be horizontally supported by the buoyancy of the lower portion. Many sinkers 13 are provided, and mooring ropes 14 are connected to the buoyancy members 12. Many resistance members 15 are provided each between the buoyancy members 12 in such a manner as to be rotatable about a vertical shaft. With this arrangement, there is generated at the resistance members 15 a thrust in a direction counter to a wave advancing direction, that is, a direction of wave drift power, owing to motion of water particles of wave, thereby reducing the wave drift power acting on the marine structure. Accordingly, the marine structure may be easily moored, and a mooring device may be made compact.
Patent JP-H086211-A (JP)
Title: Photosensitive material housing case and spool for photosensitive material
Inventor: HARA SEIJI
IPC: G03C3/00
Filed: 1994-06-24
Abstract: PURPOSE:To provide a housing case for photosensitive material and a spool for photosensitive material capable of enhancing the sureness of shielding light without exerting an influence on the opening/closing operation of a cover. CONSTITUTION:This photosensitive material housing case is provided with a flexible container 21 having an aperture part where the spool for photosensitive material 30 goes in and out and an engaging wall arranged on the periphery of the aperture part, and a cover 22 having an engaging groove engaged with the engaging wall and connected through a hinge integrally molded with the container; and it is provided with a flange receiver 23 formed near the hinge so as to be projected from the surface of the cover on the inside of the container and functioning as a contact projected part coming in contact with the flange of the spool included in the container at least when the container falls.
Patent JP-S6057949-A (JP)
Title: Semiconductor device
Inventor: SASAKI YOSHIE
IPC: H01L29/73
Filed: 1983-09-09
Abstract: PURPOSE:To improve the degree of integration of a circuit, and to reduce the delay of a signal by doping an impurity to polysilicon filled into a U groove and using the polysilicon as a resistor. CONSTITUTION:An N<+> buried layer 2, an N<-> type epitaxial layer 3, an oxide film 4 and a nitride film 5 are formed on a semiconductor substrate 1 consisting of P tpye silicon in succession, and U grooves 6a, 6b are shaped to sections to which isolation regions must be formed. The insides of the U grooves 6a, 6b are filled with polysilicon, a polysilicon layer on the surface of the substrate is removed and flattened, and polysilion 8 is left in the U grooves 6a, 6b. A P type impurity is implanted to polysilicon 8 in the U grooves through ion implantation and diffused, and given sheet resistance value, and oxide films 9 are formed on the polysilicon 8 changed into a resistor. A P<+> type diffusion layer 10 for a base, an N<+> type diffusion layer 11 for an emitter, an N<+> type diffusion layer 12 and an inter-layer insulating film 13 are shaped, contact holes 14a-14d, an aluminum electrode and an aluminum wiring are formed, and a passivation film is formed on the electrode and the wiring.
Patent JP-H04363325-A (JP)
Title: Polymer composition, its production and its cured composition
Inventor: ECHIGOYA KOJU
IPC: C08G75/02
Filed: 1991-06-10
Abstract: PURPOSE:To provide a composition composed of a specific polysulfide polyether polymer and an acid, having high compatibility to plasticizers, excellent viscosity stability in storage and low content of low-molecular weight component and capable of shortening the synthesizing reaction time. CONSTITUTION:The objective composition can be produced by compounding (A) a polysulfide polyether polymer containing a polyether segment of formula (R10)n (R1 is 2-4C alkylene; (n) is 6-200) and a structural unit of formula C2H4 OCH2OC2H4-Sx and CH2CH(OH)CH2-Sx ((x) is 1-5) and having thiol group of formula C2H4OCH2OC2H4-SH and/or CH2CH(OH)CH2-SH on the chain terminal and (B) an acid.
Patent JP-2000355392-A (JP)
Title: Method and container for housing semiconductor wafer
Inventor: SATO TOYOHIKO
IPC: H01L21/68
Filed: 1999-06-11
Abstract: PROBLEM TO BE SOLVED: To automatically pack up and take out semiconductor wafers at a low cost by a method wherein the semiconductor wafers are housed in a plurality of housing parts connected with bellows and after that the bellows are folded up. SOLUTION: On packing semiconductor wafers 1, an air cock 4 is opened and a gas is supplied with a pump under pressure through the air cock 4 and after a plurality of bellows 3 are expanded, the air cock 4 is closed. Thereby, a semiconductor housing container is inflated and a plurality of housing parts 2 are held at fixed intervals. Under such a condition, the semiconductor wafers 1 are housed respectively in the housing parts 2. After that, the air cock 4 is opened again and the enclosed gas is exhausted and the bellows 3 are contracted again. Since each of the bellows 3 is folded up in a specified shape at the contraction, each of the semiconductor wafers 1 in each of the housing parts 2 is held with each of the folded-up bellows 3.  Then packing is made while the bellows 3 are being folded up with packings and shock absorbing materials put in for filling, surrounding the semiconductor wafers 1, and thereby packing is completed.
Patent JP-H0215676-A (JP)
Title: Thin film transistor
Inventor: ISHIDA MAMORU
IPC: H01L29/78
Filed: 1988-07-01
Abstract: PURPOSE:To prevent an OFF-current from increasing due to the effect of photo- carriers by shielding light rays with a light shielding film so as to prevent the reduction in an Ion/off. CONSTITUTION:A light shielding film 3 of a high melting point metal or an oxide of it is formed on an upper part or a lower part of a channel forming region provided with poly-Si which serves as an active layer 5. A high melting point metal such as Cr or W can be used as the light shielding film 3. And, it is preferable that an insulating film 4 is provided between the light shielding film 3 and a TFT section through an LPCVD method or the like to prevent an electrical contact between the light shielding film 3 and the active layer 5.
Patent JP-H04367546-A (JP)
Title: Self leveling mortar composition
Inventor: SATO TERUYUKI
IPC: C04B7/345
Filed: 1991-06-11
Abstract: PURPOSE:To obtain a mortar composition excellent in waterproofness, wear resistance and strength by blending portland cement with super high early strength cement, fine powder silicon, a high-performance water reducing admixture, a polymer emulsion and water. CONSTITUTION:A self leveling mortar composition comprising (a) 5-20wt.% portland cement, (b) 5-30wt.% super high early strength cement, (c) 0-30wt.% blastfurnace stag, (d) 0-30wt.% fly ash, (e) 15-60wt.% fine powder silicon, (f) 0.2-0.8wt.% high-performance water reducing admixture, (g) 0.04-0.1wt.% setting adjuster, (h) 0-1.0 wt.% inorganic pigment, (i) 0-0.05wt.% binder, (j) 0-0.2wt.% casein, (k) 7-15wt.% polymer emulsion and (l) 15-25wt.% water. The composition has excellent self leveling properties. Even if ground is wet, the composition can be applied. The composition has merits such as high adhesiveness to substrate concrete body.
Patent JP-S6142404-A (JP)
Title: Production of seamless free-cutting steel pipe
Inventor: MORIMOTO TORU
IPC: B21B19/04
Filed: 1984-08-07
Abstract: PURPOSE:To prevent the generation of cracking in a piercing stage and to improve yield by a simple method in the stage of producing a titled steel pipe by a cross helical roll piercing pipe making method by filling preliminarily a material having excellent high-temp. workability by build-up welding to the piercing end face of a blank material billet. CONSTITUTION:A build-up weld layer 5 is formed of the material having the excellent high-temp. workability to a required thickness on the end face 2 of the blank material 1 where piercing starts except the drilling part 4 of a guide hole 3. The hole 3 is then drilled to the material 1 and thereafter the material is pierced through this guide hole by cross helical rolls. The substantial effect is obtd. by such build-up welding but the crack occurring in the craze arising in the inside surface of the hole in the piercing process from the guide hole arises in some case. The drilling of the hole 3 is thereupon executed from above the layer 5 by an online centering machine after the layer 5 is formed over the entire surface 2. The hole 3 is formed by the blow of a punch in such working and at the same time the drilled part 4 of the layer 5 is bent inward to the state of covering the inside surface of the hole 3. Such billet 1 is used as a blank material for pipe making.
Patent JP-H0462001-A (JP)
Title: Manufacture of silicon nitride powder molded product
Inventor: TAKEUCHI HISAO
IPC: C04B35/584
Filed: 1990-06-22
Abstract: PURPOSE:To obtain a silicon nitride sinter having high strength and uniform structure without causing voids or defects by sintering in simple molding by using an organic solvent with a specific melting point as a solvent for wet mixing, and using a metallic compound soluble in the organic solvent as a sintering assistant. CONSTITUTION:Silicon nitride powder, an organic solvent whose melting point is 0-40 deg.C, and a sintering assistant composed of a metallic compound soluble in the organic solvent are mixed with one another at a temperature not lower than the temperature at which the organic solvent is substantially melted, and the mixture thus obtained is introduced into a mold at a temperature not lower than the temperature at which the organic solvent is substantially melted. Then. the mixture is cooled at a temperature not higher than the temperature at which the organic solvent is substantially solidified to be cured in the mold, and the organic solvent is dried and removed to obtain a molded product. The temperature at which the organic solvent is substantially melted and the temperature at which the organic solvent is substantially solidified mean the respective temperatures varied from the melting temperature and solidifying temperature proper to the organic solvent by the melting of the sintering assistant.
Patent JP-H0332018-A (JP)
Title: Amorphous semiconductor thin film
Inventor: MIYAJI KENJI
IPC: H01L21/203
Filed: 1989-06-29
Abstract: PURPOSE:To improve the photoelectric transducing efficiency of an amorphous solar battery and to improve reliability by repeating a film forming step for a thin film wherein the quantity of bonded hydrogen is a specified value or less and a reforming step for exposing the film to monovalent ions, and forming a semiconductor thin film. CONSTITUTION:A thin-film forming apparatus comprises a film forming chamber 1 and a reforming chamber 2. A substrate 10 which is fixed with a conveying device is reciprocated between both chambers, and the film forming and the reforming are repeated. In the film forming step, a target 3 which does not incorporate hydrogen is used. A thin film wherein the quantity of bonded hydrogen is 10atom% or less and which has the thickness of 3-1,000Angstrom  is formed by high-frequency sputtering. In the reforming step, discharging is generated in non-depositing reaction gas, and the substrate 10 is exposed in the discharging atmosphere. A bias voltage is applied, and the thin film is exposed in the ionizing component. Said steps are repeated by the specified times. Then, the intended semiconductor thin film is formed. In this way, the photoelectric transducing efficiency of an amorphous solar battery can be enhanced, and the reliability can be improved.
Patent JP-H0911389-A (JP)
Title: Production of cushion laminate
Inventor: NOJIRI TOKUTARO
IPC: B32B5/18
Filed: 1995-06-30
Abstract: PURPOSE: To produce a cushion laminate preventing an adhesive component from penetrating into or bleeding from paper and having re-releasability. CONSTITUTION: In a method for producing a cushion laminate by bonding foam and paper by a hot-melt adhesive to laminate them, the hot-melt adhesive is based on a thermoplastic block copolymer having melt viscosity of 500-5000cps at 120 deg.C and softening temp. of 80-120 deg. and contains no oil component.
Patent JP-S6146368-A (JP)
Title: Ultrasonic oscillator for molten metal
Inventor: KURAHASHI MOTOFUMI
IPC: B22D27/08
Filed: 1984-08-09
Abstract: PURPOSE:To provide a titled device which decreases erosion even after long-term use and eliminates the change of the natural frequency by using errosion-resistant ceramics having a specific gravity or above to constitute an ultrasonic resonator which condenses, settles or floats the inclusions in a molten metal. CONSTITUTION:The resonator of an ultrasonic oscillator which is intended to condense, settles or floats the inclusions in the molten metal and contacts with the molten metal is formed of the errosion-resistant ceramics of, for example, ZrB2, etc. having at least >=6g/cm<2> specific gravity. The erosion is decreased even after long-terms use and the change in the natural frequency thereof is eliminated. The life of the resonator is extended without decreasing the effect of removing the inclusions.
Patent JP-H0917124-A (JP)
Title: Disk reproducing apparatus
Inventor: WATANABE TOMOFUMI
IPC: G11B20/10
Filed: 1995-06-30
Abstract: PURPOSE: To control the writing timing of audio data into a buffer memory accurately with the shock-proof function of a disk reproducing apparatus. CONSTITUTION: EFM demodulation and CIRC decoding are performed in a digital-signal processing part 15 with respect to the EFM signal generated in an analog-signal processing part 14, and the audio data are formed. At this time, sub-code data are taken out in synchronization with one audio data. The sub-code data are supplied to a shock-proof control part 16 together with the audio data. The shock-proof control part 1b reads the time information of the audio data from the sub-code data and controls one writing of the audio data into a butter RAM 17 based on the time information.