Patent SG-11201908769T-A (SG)
Title: Vertical gallium nitride schottky diode
Inventor: ODNOBLYUDOV VLADIMIR
IPC: H01L29/45
Filed: 2018-03-27
Abstract: WO 18/ 18337 4 Al (12) INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property Organization International Bureau (43) International Publication Date 04 October 2018 (04.10.2018) W I PO I PCT IiiimmoimiolollmonolomoniinociloimimiovoimIE (10) International Publication Number WO 2018/183374 Al (51) International Patent Classification: HOlL 29/872 (2006.01) HOlL 29/47 (2006.01) HO1L 29/45 (2006.01) (21) International Application Number: PCT/US2018/024629 (22) International Filing Date: 27 March 2018 (27.03.2018) (25) Filing Language: English (26) Publication Language: English (30) Priority Data: 62/478,483 29 March 2017 (29.03.2017) US 15/936,305 26 March 2018 (26.03.2018) US (71) Applicant: QROMIS, INC. [US/US]; 2306 Walsh Av- enue, Santa Clara, California 95051 (US). (72) Inventors: ODNOBLYUDOV, Vladimir; c/o Qromis, Inc., 2306 Walsh Avenue, Santa Clara, California 95032 (US). AKTAS, Ozgur; c/o Qromis, Inc., 2306 Walsh Av- enue, Santa Clara, California 95051 (US). (74) Agent: LIU, Rong et al.; KILPATRICK TOWNSEND & STOCKTON LLP, Mailstop: IP Docketing-22, 1100 Peachtree Street, Suite 2800, Atlanta, Georgia 30309 (US). (81) Designated States (unless otherwise indicated, for every kind of national protection available): AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (84) Designated States (unless otherwise indicated, for every kind of regional protection available): ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG). Published: — with international search report (Art. 2 I (3)) (54) Title: VERTICAL GALLIUM NITRIDE SCHOTTKY DIODE (57) : A vertical Schottky diode includes an ohmic contact, a first epitaxial N-type gallium nitride layer physically contacting the ohmic contact and having a first doping concentration, and a sec- ond epitaxial N-type gallium nitride layer physically contacting the 520 518 first epitaxial N-type gallium nitride layer and having a second dop- ing concentration that is lower than the first doping concentration. 522 The vertical Schottky diode further includes a first edge termination region and a second edge termination region coupled to the second 510-1 516 epitaxial N-type gallium nitride layer and separated from each other 512 by a portion of the second epitaxial N-type gallium nitride layer, and a Schottky contact coupled to the portion of the second epitaxial N- type gallium nitride layer, and to the first edge termination region and the second edge termination region. Fla 5 500