Patent SG-11201806048R-A (SG)
Title: Method and structure for reducing substrate fragility
Inventor: ZHANG LI
IPC: H01L21/31
Filed: 2017-01-19
Abstract: 102 2) Thermal oxide formation 102 Si substrate Si substrate In situ or ex situ Si substrate growth f 100 4) to recover the etch damage 102 Thermal oxide RIE etch to expose the growth window and the thermal oxide remains at the edge and the back of I the wafer. 102 X 1 9 6 Si substrate I Si substrate 104 5) GaN-on-Si growth with AIN and strain compensation buffer GaN device j - 107 Si substrate 6) ICP removal of poly-GaN deposition 104 on the thermal oxide 107 Si substrate 104 Thin poly GaN deposition on 102 104 the thermal oxide 108 W O 20 17127 / 0 24 Al (12) INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property Organization International Bureau (10) International Publication Number (43) International Publication Date WO 2017/127024 Al 27 July 2017 (27.07.2017) WIPO I PCT (51) International Patent Classification: H01L 21/20 (2006.01) HOlL 21/31 (2006.01) (21) International Application Number: PCT/SG2017/050029 (22) International Filing Date: 19 January 2017 (19.01.2017) (25) Filing Language: English (26) Publication Language: English (30) Priority Data: 62/280,921 20 January 2016 (20.01.2016) US (71) Applicants: MASSACHUSETTS INSTITUTE OF TECHNOLOGY [US/US]; 77 Massachusetts Avenue, Cambridge, Massachusetts 02139 (US). NANYANG TECHNOLOGICAL UNIVERSITY [SG/SG]; 50 Nan- yang Avenue, Singapore 639798 (SG). NATIONAL UNI- VERSITY OF SINGAPORE [SG/SG]; 21 Lower Kent Ridge Road, Singapore 119077 (SG). (72) Inventors: ZHANG, Li; c/o Singapore-MIT Alliance for Research and Technology Centre, 1 CREATE Way, #10-01 CREATE Tower, Singapore 138602 (SG). LEE, Kwang Hong; c/o Singapore-MIT Alliance for Research and Tech- nology Centre, 1 CREATE Way, #10-01 CREATE Tower, Singapore 138602 (SG). BAO, Shuyu; c/o Nanyang Tech- nological University, 50 Nanyang Avenue, Singapore 639798 (SG). LEE, Eng Kian, Kenneth; c/o Singa- pore-MIT Alliance for Research and Technology Centre, 1 CREATE Way, #10-01 CREATE Tower, Singapore 138602 (SG). FITZGERALD, Eugene A.; c/o Massachu- setts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139 (US). CHUA, Soo Jin; c/o National University of Singapore, Faculty of Engineer- ing, Department of Electrical & Computer Engineering, 21 Lower Kent Ridge Road, Singapore 119077 (SG). TAN, Chuan Seng; c/o Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (SG). (74) Agent: VIERING, JENTSCHURA & PARTNER LLP; P.O Box 1088, Rochor Post Office, Rochor Road, Singa- pore 911833 (SG). (81) Designated States (unless otherwise indicated, for every kind of national protection available): AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (84) Designated States (unless otherwise indicated, for every kind of regional protection available): ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, [Continued on next page] (54) Title: METHOD AND STRUCTURE FOR REDUCING SUBSTRATE FRAGILITY Figure 1 (a) (57) : Method and structure for reducing substrate fragility. In one embodiment, a substrate for metamorphic epitaxy of a material film is provided, the substrate comprising a passivation layer defining a growth window for the material film on a depos - ition surface of the substrate, the growth window being laterally spaced from an edge of the substrate. 11111111111111011101010111110101111101110111010111011010101111111111111110111111 WO 2017/127024 Al 1#11101M011111 1111111101013011101011011010101M0VIM# LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG). Published: — with international search report (Art. 21(3)) before the expiration of the time limit for amending the claims and to be republished in the event of receipt of amendments (Rule 48.2(h))