baber/WOPTO huggingface dataset:
Patent TW-388805-B (TW)
Title: Reversible discoloring composition and clock enclosing part using this
Inventor: NOGUCHI KOICHI
IPC: C09D7/61
Filed: 1999-03-31
Granted: 2000-05-01
Abstract: The present invention provides a reversible discoloring composition which easily and inexpensively provides a clock enclosing part forming a member instantly and reversibly changing in an object color according to a kind of light source by constituting so as to have particulates composed of one kind or two or more kinds of rare earth oxides expressed by a formula M2O3 (here, M shows Ho, Nd or Pr) and a light transparent base material by dispersing these particulates.
Patent TW-383226-B (TW)
Title: Counter for fluid dispenser
Inventor: JEWETT WARREN R
IPC: A61M15/00
Filed: 1999-04-23
Granted: 2000-03-01
Abstract: The disclosure is of a device for indicating a plurality of data relating to the condition of fluid dispensations remaining in a container for holding and dispensing metered quantities of the fluid. The device sequentially displays the time elapsed since the most recent dispensation, the number of fluid dispensations remaining in the container and the number of dispensations made during the previous twenty-four hours. In one embodiment, a foam spring is included to closely match the pressure required to signal that a dispensation has occurred with the pressure required to make the dispensation, thereby minimizing false counts and ensuring that each dispensation is included in the count. The foam spring also provides a hermetic seal to the microelectronic means. The microelectronic means is mounted on a glass sheet and is hermetically sealed thereto.
Patent TW-432592-B (TW)
Title: Structure and manufacturing method for integrated circuit isolation device
Inventor: TSENG HORNG-HUEI
IPC: H01L21/76
Filed: 1999-05-07
Granted: 2001-05-01
Abstract: A trench isolation structure which is characterized to provide a dielectric T-shape object to fill and cross a trench of a semiconductor substrate so as to isolate from the integrated circuit installed on the semiconductor substrate. The formation of dielectric T-shape object is to deposit an isolation material in a space that the space is defined by the trench and a dielectric covering on the semiconductor substrate in which the dielectric is partly removed in a region and the region is crossing the trench and extending and cross the longitudinal edge of the trench.
Patent TW-482806-B (TW)
Title: Compositions stabilized by dioxopiperazinyl derivatives
Inventor: ZEDDA ALESSANDRO
IPC: C09D155/00
Filed: 1999-05-10
Granted: 2002-04-11
Abstract: Polyoxymethylene, blends of polycarbonate with acrylonitrile-butadiene-styrene terpolymer, and coatings based on a functional acrylate resin and a crosslinking agent, which are stabilized by addition of a compound of the formula I, wherein s is from the range 1 to 8; R1, R2, R3 and R4, independently of each other, are C1-C4alkyl, or R1 and R2 or R3 and R4, together with the carbon atom to which they are bound, form a cyclopentyl or cyclohexyl ring; R5 is hydrogen; C1-C18alkyl; oxyl; OH; CH2CN; C1-C18alkoxy; C5-C12cycloalkoxy; C3-C8alkenyl; C3-C8alkynyl; C7-C12phenylalkyl; C7-C15phenylalkyl, which is substituted on the phenyl ring by 1, 2 or 3 radicals selected from C1-C4alkyl and C1-C4alkoxy; C7-C15phenylalkoxy; C7-C15phenylalkoxy, which is substituted on the phenyl ring by 1, 2 or 3 radicals selected from C1-C4alkyl and C1-C4alkoxy; or R5 is C1-C8alkanoyl; C3-C5alkenoyl; C1-C18alkanoyloxy; glycidyl; or a group -CH2CH(OH)-G, in which G is hydrogen, methyl or phenyl; and A is as described in claim 1, show a good resistance against harmful effects of light, oxygen and heat.
Patent TW-425550-B (TW)
Title: Semiconductor storage device capable of speeding up an access from a standby state
Inventor: MORIKAWA YOSHINAO
IPC: G11C11/41
Filed: 1999-05-20
Granted: 2001-03-11
Abstract: In a semiconductor storage device, in a CE access stage, an access operation is executed by generating a reference pulse CLK_NEW by only a signal (node A) generated through the detection of a change of the CE signal by means of a CE transition detection circuit (6) connected to the output of a CE input circuit (5). An ATD signal (node D), which is generated by an ATD circuit (2) connected to the output of an address input circuit (1) in response to a change of an address signal after the CEa signal is inputted to each address input circuit (1) in response to the change of the CE signal, does not contribute to the generation of the reference pulse CLK_NEW. For this reason, the reference pulse generating timing and pulse width in the CE access stage do not change from those in the address access stage, and this eliminates the lag of the access time only in the CE access stage, the lag being observed in the prior art case. In the address access stage, the signal (node D), which is generated by the ATD circuit (2) connected to the output of the address input circuit (1) in response to the change of the address signal, has not contributed to the generation of the reference pulse in the CE access stage, conversely becomes effective to contribute to the generation of the reference pulse CLK_NEW in the address access stage, thereby a CE access time is prevented from lagging behind an address access time.
Patent TW-474873-B (TW)
Title: Holder for a cup with a handle
Inventor: FUKUHARA KUNIHIRO
IPC: B60N3/10
Filed: 1999-06-04
Granted: 2002-02-01
Abstract: To prevent a cup from rotating in a cup holder with a handle such as a mug cup. This holder 10 is provided with a base 30, a cup retaining hole 32, a notched part 33, an arm 40, and a spring 50 serving as an energizing member. The arm 40 is fitted so as to move vertically. The rising section of the arm 40 is formed so as to close the notched part 33. The arm 40 is energized by the spring 50 toward its rising position. The arm 40 is pressed by the handle 21 of the cup 20 and lowered against the energizing force of the spring 50.
Patent TW-413889-B (TW)
Title: Transistor structure using bipolar junction transistor to avoid antenna effect and manufacturing method
Inventor: SHR JIAU-REN
IPC: H01L21/76
Filed: 1999-06-25
Granted: 2000-12-01
Abstract: There is disclosed a transistor structure using bipolar junction transistor to avoid antenna effect, which comprises: a MOS transistor with a gate structure configured on a semiconductor substrate; a bipolar junction transistor whose emitter is connected with the gate structure of the MOS transistor; and a diffusion region which electrically contacts with the collector of the bipolar junction transistor. The manufacturing method comprises the following steps: forming a first MOS transistor, a first bipolar junction transistor, a first diffusion region, a second MOS transistor, a second bipolar junction transistor, and a second diffusion region on a semiconductor substrate respectively; forming an inter-dielectric layer with a plurality of openings on the surface of the semiconductor substrate so that the emitters of the first and the second bipolar junction transistors are electrically connected with the gate structure through those openings, and the collectors of the first and the second bipolar junction transistors are electrically connected with the ion diffusion region.
Patent TW-466098-B (TW)
Title: Endless conveyor
Inventor: VAN DEN HAZEL BRAND
IPC: B65B23/06
Filed: 1999-07-02
Granted: 2001-12-01
Abstract: An endless conveyor for conveying substantially rotationally-symmetrical products, comprising at least one endless conveying element and a number of transverse elements extending substantially perpendicularly to a conveying direction, wherein at least one hourglass-shaped roller is mounted on each transverse element, wherein the mutual distance between the successive transverse elements in a first path part is smaller than in a second path part, wherein a first control device is provided effecting an increase of distance between the transverse elements at a first transition from the first to the second path part, wherein a second control device is provided effecting a decrease of distance between the transverse elements at a second transition from the second to the first path part, wherein in at least a portion of the second path part, a rotationally-symmetrical support element has moved between each pair of successive hourglass-shaped rollers for supporting the products to be conveyed.
Patent TW-473974-B (TW)
Title: Manufacture method of copper interconnect with flat surface
Inventor: SHIH TSU
IPC: H01L23/522
Filed: 1999-08-16
Granted: 2002-01-21
Abstract: This invention provides manufacture method of copper interconnect with flat surface suitable for semiconductor substrate having interconnect trench formed. It includes the following steps: forming a barrier film, copper seed film and an insulating film in sequence at the bottom and side wall of the interconnect trench and on the surface of the substrate; removing the insulating film at the bottom and side wall of the trench to expose the copper seed film; using electrochemical deposition to form copper layer in the trench of said interconnect; and performing chemical mechanical polish to remove copper, insulating film, barrier film and copper seed film outside of the trench and to form copper interconnect with flat surface.
Patent TW-448440-B (TW)
Title: Manufacturing for long life-span and high compatibility of CD-R disks
Inventor: YE CHUEI-JING
IPC: G11B7/00
Filed: 1999-08-20
Granted: 2001-08-01
Abstract: The present invention provides a novel dye composition and formula to increase the life-span of the disks and employs the novel dye composition and formula to increase the compatibility with the CD writer. The method is characterized in using the Ingaphor Supergreen OS in connection with suitable solvent as the recording layer on the disk.
Patent TW-464801-B (TW)
Title: Heat dissipation device and its manufacturing method
Inventor: LIOU HENG-JR
IPC: H05K7/20
Filed: 1999-08-26
Granted: 2001-11-21
Abstract: There are provided a heat dissipation device and its manufacturing method. The heat dissipation device includes a substrate, a heat dissipation part and a contact part integrally extended from the top of the substrate, and a heat conducting tube installed at the bottom of the substrate. The heat dissipation part is formed by heat dissipation fins embedded and formed on the substrate, and the top of the contact part is closed and adhered to an electronic device. An extending groove is formed at a position of the heat dissipation part and contact part of the substrate and, and at a position between the heat dissipation part and the contact part for accommodating the heat conducting tube, so that the heat conducting tune comes in touch with the heat dissipation part and the contact part for transferring the heat above the contact part via the heat conducting tube to the heat dissipation part to be dissipated out.
Patent TW-408044-B (TW)
Title: Apparatus for movable supporting article
Inventor: KAYATANI FUMINORI
IPC: B21D37/04
Filed: 1999-09-30
Granted: 2000-10-11
Abstract: An apparatus for movably supporting an article includes a plurality of raising units arranged in a row on a mount, with their outer side surfaces contacting with those of adjacent ones. Each raising unit includes a lifting member including a piston and a ball disposed on top of the piston. A casing has a cylinder bore which is formed therein to open upward and in which the lifting member is disposed to be vertically movable. A pressure chamber is formed beneath the piston. A portion of the ball can protrude through the opening when the lifting member is raised. An air path extends from one to opposite side surfaces of the casing through the pressure chamber. When compressed air is supplied to the pressure chamber of the raising unit at one end of the row, it is also supplied to the pressure chambers of the remaining raising units.
Patent TW-428321-B (TW)
Title: Transistor and logic circuit on thin silicon-on-insulator wafers based on gate induced drain leakage current
Inventor: JI MING-HUA
IPC: H01L27/12
Filed: 1999-10-01
Granted: 2001-04-01
Abstract: A transistor structure fabricated on thin SOI is disclosed. The transistor on thin SOI has gated n<SP>+</SP> and p<SP>+</SP> junctions, which serve as switches turning on and off GIDL current on the surface of the junction. GIDL current will flow into the floating body and clamp its potential and can thus serve as an output node. The transistor can function as an inverter. The body (eithern-well or p-well) is isolated form the n<SP>+</SP> or p<SP>+</SP> ""GIDL switches"" by a region of opposite doping type, i.e., p-base and n-base. The basic building blocks of logic circuits, e.g., NAND and NOR gates, are easily implemented with such transistors on thin SOI wafers. These new transistors on thin SOI only need contacts and metal line connections on the Vcc and Vss. The connection of fan-outs (between the output and input) can be implemented by capacitor coupling. The transistor structure and operation is useful for high-performance, low-voltage, and low-power VLSI circuits on SOI wafers.
Patent TW-437217-B (TW)
Title: Reconfigurable parallel-DSP-based digital radio modem
Inventor: CHEN THOMAS C H
IPC: H04L27/00
Filed: 1999-10-08
Granted: 2001-05-28
Abstract: A reconfigurable digital radio modem which can be used to transmit and receive signals using a radio frequency communication network. The reconfigurable digital radio modem is comprised of a parallel-DSP-based digital modem unit (110), a transceiver (120), a host port (130), either an Erasable Programmable Read-Only Memory (140) in stand-alone mode or a host processor (160) in host mode, and a power source (150). The parallel-DSP-based digital modem unit uses a parallel digital signal processor (parallel-DSP) to process digital signals in parallel. A petri net is used to specify the concurrent processing of the parallel-DSP. The parallel-DSP-based digital modem unit is implemented in a field-programmable gate arrays (FPGA) circuit, and can be reconfigured while in the field to correct bugs, recover from damage, change system parameters, or add new functionality.
Patent TW-423109-B (TW)
Title: Method of fabricating semiconductor device
Inventor: JENG SHIANG-YUAN
IPC: H01L21/768
Filed: 1999-10-21
Granted: 2001-02-21
Abstract: This invention is about the method of fabricating semiconductor device and includes the following procedures. At first, the first oxide layer, poly silicon layer and polycide layer are formed sequentially on the substrate, in which polycide is the conduction structure. Silicon nitride layer is formed on the conduction structure and is followed by the formation of photoresist pattern on the silicon nitride layer so as to etch part of silicon nitride layer in order to expose part of the polycide. The etched silicon nitride layer is used as mask and the photoresist pattern is stripped. The isotropic etching is performed onto the polycide so as to form the bottom cut in the polycide below the silicon nitride layer. At this time, the top width of polycide is smaller than that of silicon nitride layer. The anisotropic etching is then performed onto the polycide and the polysilicon layer until the first oxide layer is exposed so as to form the plural layer structure. Finally, the spacer is formed on the sidewall of the plural structure to form semiconductor device. The shrinking sidewall of the polycide is stopped after an oxidation process such that it can not extrude from the spacer.
Patent TW-I244491-B (TW)
Title: Flame-resistant, heat-resistant poly carbonate-abs moulding compositions
Inventor: ECKEL THOMAS
IPC: C08L69/00
Filed: 1999-11-01
Granted: 2005-12-01
Abstract: Thermoplastic moulding composition comprising at least 2 components chosen from the group consisting of aromatic poly(ester)carbonates, graft polymers of one or more vinyl monomers on one or more graft bases having a glass transition temperature of < 10 DEG C, thermoplastic vinyl (co)polymer and polyalkylene terephthalate and 0.5 to 20 parts by wt. phosphorus compound of the general formula (I).
Patent TW-454013-B (TW)
Title: Sex-specific sequence of goat amelogenin gene and its application in embryo sexual identification
Inventor: CHEN CHIUAN-MU
IPC: C07H21/02
Filed: 1999-11-10
Granted: 2001-09-11
Abstract: The present invention relates to an embryo sexual identification technique with highly efficiency, sensitivity and repeatability, which can be used on embryo sexual identification of goat. The method comprises separately cloning and sequencing the coding regions and the introns of the goat amelogenin gene (gAML) on the goat chromosomes. The results indicate that there are sex-specific sequences in the fifth intron of the gene. Based on such sequence, we designed a set of sex-specific triplex primers. The upstream primer is gXY15(+) that can bind to the gAML gene on the X and Y chromosome at the same time. The downstream primers, the gX15-246(-) and gY15-206(-), would particularly specific bind to the gAML gene on the X and Y chromosome. Through a polymerase chain reaction (PCR), the product from a female cell exists only a single bend of DNA with length of 246-bp; and the one from a male cell exists two bends of DNA with different length of 206-bp and 246-bp. Therefore, such difference provides a suitable method for goat embryo sexual identification. The major characteristics according to the present invention include: (1) with high sensitivity, applicable in sex identification even only using a single white blood cell or a single cleavage cell of blastula; (2) with highly diagnostic efficiency, capable of identifying hundreds of goat embryo in 3 hours; (3) simply operation procedures without complicated steps of DNA extraction and need no additional control group intron; and (4) would be applied on different species of goats.
Patent TW-486604-B (TW)
Title: Photoimageable compositions having improved chemical resistance and stripping ability
Inventor: LUNDY DANIEL EDWARD
IPC: C08F291/00
Filed: 1999-12-08
Granted: 2002-05-11
Abstract: A negative-acting photoimageable composition useful as a primary imaging resist in the manufacture of printed circuit boards comprises an acid-functional binder polymer, a photopolymerizable component, and a photoinitiator chemical system, in which the binder polymer has an anhydride functional backbone half-esterified with a (meth)acrylate functional hydroxy-terminated oligomer, wherein the (meth)acrylate functionality is separated from the half-ester linkage by at least two alkoxlate groups and at least one ring opened lactone group for improved stripping ability in strong alkaline aqueous stripping solutions, while maintaining good chemical resistance to other processing chemicals, such as alkaline developing solutions, acid etching solutions, and acid plating baths.
Patent TW-580516-B (TW)
Title: Non-corrosive cleaning composition and method for removing photoresist and/or plasma etching residues
Inventor: HONDA KENJI
IPC: B08B3/08
Filed: 1999-12-14
Granted: 2004-03-21
Abstract: Non-corrosive cleaning compositions that are useful for removing photoresist and/or plasma etch residues from a substrate. The cleaning composition comprises: (i) a hydroxy-(low alkyl)-hydrazine, (ii) water, and (iii) at least one compound selected from the group consisting of a carboxylic acid, a water-miscible organic solvent and mixtures thereof.
Patent TW-451491-B (TW)
Title: Semiconductor device and method of producing the same
Inventor: ADAN ABERTO OSCAR
IPC: H01L27/12
Filed: 1999-12-21
Granted: 2001-08-21
Abstract: A semiconductor device including an insulating film, a plurality of word lines parallel to one another, a gate insulating film and a first conductivity type semiconductor layer that are formed in this order, wherein the surface of said insulating film is rendered flat with respect to the surface of the word lines, and the first conductivity type semiconductor layer includes bit lines comprising a plurality of second conductivity type high concentration impurity diffusion layers crossing the word lines and parallel to one another.
Patent TW-452890-B (TW)
Title: MOS-gated device having a buried gate and process for forming same
Inventor: KOCON CHRISTOPHER
IPC: H01L31/062
Filed: 2000-02-11
Granted: 2001-09-01
Abstract: An improved trench MOS-gated device comprises a monocrystalline semiconductor substrate on which is disposed a doped upper layer. The upper layer includes at an upper surface a plurality of heavily doped body regions having a first polarity and overlying a drain region. The upper layer further includes at its upper surface a plurality of heavily doped source regions having a second polarity opposite that of the body regions A gate trench extends from the upper surface of the upper layer to the drain region and separates one source region from another. The trench has a floor and sidewalls comprising a layer of dielectric material and contains a conductive gate material filled to a selected level and an isolation layer of dielectric material that overlies the gate material and substantially fills the trench. The upper surface of the overlying layer of dielectric material in the trench is thus substantially coplanar with the upper surface of the upper layer. A process for forming an improved MOS-gate device provides a device whose gate trench is filled to a selected level with a conductive gate material, over which is formed an isolation dielectric layer whose upper surface is substantially coplanar with the upper surface of the upper layer of the device.
Patent TW-475203-B (TW)
Title: Forming method of inorganic anti-reflection coating
Inventor: WU SZ-AN
IPC: H01L21/027
Filed: 2000-02-23
Granted: 2002-02-01
Abstract: A fabrication method of inorganic anti-reflection coating is disclosed, wherein argon gas is used as the carrier gas to improve helium to raise the uniformity of the anti-reflection coating fabricated, increase the accuracy of the exposure, greatly reduce the fabrication cost, which is of great value to semiconductor electronics manufacturing industry.
Patent TW-498565-B (TW)
Title: Piezoelectric transformer
Inventor: WATANABE YOSHIYUKI
IPC: H01L41/107
Filed: 2000-03-29
Granted: 2002-08-11
Abstract: The present invention aims to provide a type of piezoelectric transformer that not only can allow low cycle driving and accomplish size miniaturization but also can save the required assembly area and improve the productivity at the same time. An electro-conductive resin is applied to separately installed three lead wires (18, 20, 22) on two external electrodes (14, 16) and, at the same time, an adhesion agent is applied to secure the end of the primary side of the piezoelectric sintered unit (12) on a fixing resin (24). Under such a condition, electric voltage is applied onto the lead wires (18, 20) connected to the external electrode (14) on the primary side to generate mechanical vibration on the primary side by means of mechanical-electrical combination of the piezoelectric sintered unit (12). An output voltage is generated due to mechanical-electrical combination when the mechanical vibration is transmitted to the secondary side before being output from the lead wire (22) connected to the external electrode (16) on the secondary side. By taking the fixed end of the primary side as a reference, the piezoelectric sintered unit (12), having a total length equal to approximately 1/4 of the number of the driving cycles, vibrates the end of the secondary side.
Patent TW-504530-B (TW)
Title: Frame driving device for sewing machine
Inventor: TAJIMA IKUO
IPC: D05C9/06
Filed: 2000-04-07
Granted: 2002-10-01
Abstract: A sewing machine frame drive device capable of precisely conveying on an X-Y coordinate plane a frame, on which an article being sewn is set, characterized in comprising X-direction drive units (6) and Y-direction drive units (7) for imparting driving forces to a frame (5) of various types, on which an article being sewn is set, the units being composed of screw rods (11) rotatively driven by motors (23) in alternate directions, and moving bodies (12) threaded on the screw rods (11).