baber/WOPTO huggingface dataset:
Patent TW-201545388-A (TW)
Title: Resistive ram and method of manufacturing the same
Inventor: CHANG SHUO-CHE
IPC: H01L21/8239
Filed: 2014-05-29
Abstract: A resistive RAM and a method of manufacturing the same are provided. The resistive RAM includes a first electrode, a second electrode, and a transition metal oxide (TMO) layer between the first and the second electrodes. The resistive RAM further includes an activated metal layer between the first electrode and the TMO layer, and a metal oxynitride layer which is formed at a surface of the activated metal layer in the gas environment containing nitrogen and oxygen elements.
Patent TW-201507454-A (TW)
Title: Manager for DASH media streaming
Inventor: REHAN MOHAMED M
IPC: H04N21/43
Filed: 2014-06-04
Abstract: Client devices streaming content adhering to the Dynamic Adaptive Streaming over HTTP (DASH) standard may send Quality of Experience (QoE) information to a DASH manager and request server status updates from the DASH manager. The server status updates may include information regarding one or more content servers including online status information, content availability, load, and content server recommendations. The content server recommendations may be a relative ranking of servers that the DASH manager recommends that the client device select as a source server for desired media content. Based on the server status update information, the client may select a source server. The QoE information sent to the DASH manager may be used by the DASH manager, along with server status information, to generate the relative ranking.
Patent TW-201503583-A (TW)
Title: Cascode switch device
Inventor: YANG CHANG-JING
IPC: H03K17/081
Filed: 2014-06-11
Abstract: A cascode switch device is provided. The cascode switch device includes a high voltage (HV) transistor having a first drain electrode, a first source electrode, and a first gate electrode and a low voltage (LV) transistor cascoded with the HV transistor and having a second drain electrode, a second source electrode, and a second gate electrode. A first ratio of an equivalent capacitance of a second drain-to-source capacitance between the second drain and the second source electrodes, a gate-to-drain capacitance between the second gate and the second drain electrodes and a gate-to-source capacitance between the first gate and the first source electrodes to a first drain-to-source capacitance between the first source and the first drain electrodes being based on a second ratio of a drain voltage of the HV transistor to a break-down voltage of the LV transistor so as to provide voltage protection for the LV transistor.
Patent TW-201508680-A (TW)
Title: Realtime activity suggestion from social and event data
Inventor: MISHRA PRAGYANA K
IPC: G06Q50/00
Filed: 2014-07-17
Abstract: Architecture that aggregates realtime geo-referenced data over areas such as physical world geographical areas and virtually-defined areas such as by geofences to provide users with a quick overview and suggestion of activities to do across an area of interest in the spatial extent. The geo-referenced data can be supplied by a provider and/or user. When in combination, event listings can be obtained from providers and social data (e.g., check-in) can be obtained from social websites and/or businesses that make check-in data available freely or under subscription, for example. At least one advantageous outcome of the disclosed aggregation approach is that privacy issues, which currently exist in the industry by showing exact locations of user contributed data, are overcome. While aggregating over larger spatial extents having high activity, the events supplied by provider listings are assigned scores that show trending and/or high-user activity volumes, and therefore, can be suggested to users.
Patent TW-201508632-A (TW)
Title: Processing device and method for configuration data
Inventor: HENRY G GLENN
IPC: G11C17/14
Filed: 2014-07-25
Abstract: A processing device providing configuration data to a microprocessor and including a fuse array, a cache memory and at least one core is provided. The fuse array is disposed on a die and programmed by the configuration data. The fuse array includes a first plurality of semiconductor fuses storing compressed cache correction data. The cache memory is disposed on the die. The core is disposed on the die and coupled to the fuse array and the cache memory. The core access the fuse array upon power-up/reset, to decompress the compressed cache correction data and to distribute decompressed cached correction data to initialize the cache memory.
Patent TW-201518531-A (TW)
Title: Holding arrangement for substrates and apparatus and method using the same
Inventor: HEIMEL OLIVER
IPC: C23C14/50
Filed: 2014-08-04
Abstract: A holding arrangement (10) for holding a substrate (20) during vacuum layer deposition is provided. The holding arrangement (10) includes a frame (30) configured to support the substrate (20), and one or more holding devices (40) attached to the frame (30) and configured to provide a holding force to the substrate (20). Each holding device (40) includes an elastic unit (41) configured to provide the holding force, and engaging means (42) configured to be engaged for providing a release force (52) opposing the holding force to release the substrate (20).
Patent TW-201522921-A (TW)
Title: Acoustic sensor and acoustic sensor system
Inventor: OTSU KENJI
IPC: G01N29/14
Filed: 2014-08-21
Abstract: According to one embodiment, an acoustic sensor includes a base and a first strain sensing element. The base includes a support and a first film unit supported by the support. The first film unit is flexible. The first strain sensing element is provided on a first surface of the first film unit. The first strain sensing element includes a first magnetic layer, a second magnetic layer, and a first intermediate layer provided between the first magnetic layer and the second magnetic layer. An angle between a magnetization of the first magnetic layer and a magnetization of the second magnetic layer is variable by an acoustic wave. The acoustic wave is transmitted to a first film unit by a first transmitting material in contact with the first film unit.
Patent TW-201609423-A (TW)
Title: Heat-shrinkable multilayer film and heat-shrinkable label
Inventor: ISHIKAWA KIYOYASU
IPC: C09J167/00
Filed: 2014-09-02
Abstract: The present invention provides a heat-shrinkable multilayer film in which adhesion between outer and inner layers and an intermediate layer is excellent not only at a normal temperature but also at a low temperature, so as to effectively prevent an inter-layer separation and avoid white streaks remaining in a creased portion after the heat shrinkage. Also provided is a heat-shrinkable label formed with the heat-shrinkable multilayer film. This invention is a heat-shrinkable multilayer film formed by laminating the outer and inner layers and the intermediate layer through adhesive layers. The outer and inner layers contain a polyester resin, and the intermediate layer contains a polystyrene resin. The adhesive layers contain 20-65 wt% of a polystyrene resin and 35-80 wt% of a polyester elastomer.
Patent TW-201521077-A (TW)
Title: System, method and apparatus for coordinating pressure pulses and RF modulation in a small volume confined process reactor
Inventor: DHINDSA RAJINDER
IPC: C23C16/50
Filed: 2014-09-02
Abstract: A plasma processing system and method includes a processing chamber, and a plasma processing volume included therein. The plasma processing volume having a volume less than the processing chamber. The plasma processing volume being defined by a top electrode, a substrate support surface opposing the surface of the top electrode and a plasma confinement structure including at least one outlet port. A conductance control structure is movably disposed proximate to the at least one outlet port and capable of controlling an outlet flow through the at least one outlet port between a first flow rate and a second flow rate, wherein the conductance control structure controls the outlet flow rate and an at least one RF source is modulated and at least one process gas flow rate is modulated corresponding to a selected processing state set by the controller during a plasma process.
Patent TW-201614581-A (TW)
Title: Quadrant method of factor analysis for survey and research
Inventor: KAO CHUN-FENG
IPC: G06Q99/00
Filed: 2014-10-03
Abstract: A quadrant method of factor analysis for survey and research, the method includes steps of: displaying multiple questions, then, for each questions, choosing a choice from one of multiple the factor-presence-choices of a question-answer-variate of one question as an answer-choice, obtaining an evaluation score in response to the answer-choice for the question and, doing statistics for the question-importance-variate of the factor according to the ticking frequency of the most-important-tickbox of each of the factors. Each question in the multiple questions representing a factor and including multiple variates, the multiple variates including a question-importance-variate and a question-answer-variate, the question-importance-variate having a most-important-tickbox, and the question-answer-variate including multiple the factor-presence-choices.
Patent TW-201529236-A (TW)
Title: Centrifugal ejecting machine
Inventor: SUZUKI HIROAKI
IPC: B24C5/06
Filed: 2014-10-08
Abstract: This invention provides an ejecting machine which exhibits excellent ejection efficiency by appropriately setting a ejection pattern of ejecting material. The centrifugal ejecting machine of the present invention has side boards, a plurality of blades fixed on the side boards, a control cage disposed in a radial inner side of the side board and having an opening through which the ejecting material is delivered in between the blades, a distributor disposed in a radial inner side of the control cage for mixing the ejecting material and supplying the ejecting material to the control cage, and a rotating shaft for rotating the side boards, the plurality of blades and the distributor. The blades are formed to extend in a slot direction and have radial outer sides positioned at a rear side of the direction of rotation with respect to the radial inner sides. The control cage has a plurality of openings or one opening formed by integrally overlapping of all of the plurality of openings or a part of the plurality of openings.
Patent TW-201613443-A (TW)
Title: Electronic device
Inventor: Yang nai-lin
IPC: G06F1/16
Filed: 2014-10-27
Abstract: The present disclosure relates to a electronic device including a core assembly, a base housing, and a top housing assembly. The base housing and the top housing assembly are detachably connected for receiving the core assembly between the base housing and the top housing assembly. The top housing assembly includes a top housing and rotary member, one end of the rotary member is rotatably connected to one end of the top housing, the one end of the rotary member rotate relative to the top housing until the rotary member is parallel to the top housing, for resisting the base housing between the rotary member and the top housing, and the other end of the rotary member is detachably latched to the top housing.
Patent TW-201528375-A (TW)
Title: Silicon nitride film and method and apparatus for manufacturing the same
Inventor: MURAKAMI SHOICHI
IPC: H01L21/318
Filed: 2014-11-24
Abstract: To provide a method using organic silane as a raw material therefor, capable of improving film quality such as the electrical characteristics thereof, and capable of reducing the carbon atom and/or hydrogen atom content ratio relative to silicon atom and nitrogen atom content in a silicon nitride film formed by plasma CVD. A silicon nitride film formed using plasma CVD and by plasmifying organic silane and at least one type of additive gas selected from a group comprising hydrogen and ammonia. The carbon atom content in this silicon nitride film is 0.8 when the total silicon atom content and nitrogen atom content is 1. In addition, the hydrogen atom content in this silicon nitride film is 0.9 when the total silicon atom content and nitrogen atom content is 1. As a result of this silicon nitride film, characteristics such as leak current reduction are improved thereby improving the reliability of a variety of devices comprising this silicon nitride film.
Patent TW-201542347-A (TW)
Title: Upper driving type juice extractor
Inventor: LEE HYUN-SAM
IPC: B30B9/02
Filed: 2014-11-27
Abstract: Provided is an upper driving type juice extractor in which a driving part is mounted at an upper side of an I-shaped main body having a front groove through which an extracting part is inserted and removed and a rear groove through which a residue container is inserted and removed.
Patent TW-201538616-A (TW)
Title: Highly crystalline electrically conducting organic materials, methods of manufacture thereof and articles comprising the same
Inventor: IAGODKINE ELISSEI
IPC: H01L51/00
Filed: 2014-12-17
Abstract: Disclosed herein is a composition comprising a regioregular oligothiophene, a regioregular poly[2,5-bis(3-alkylthiophen-2-yl)thieno(3,2-b)thiophene] and/or a benzothiophene; where the regioregular oligothiophene, the regioregular poly[2,5-bis(3-alkylthiophen-2-yl)thieno(3,2-b)thiophene] and the benzothiophene each have a number average molecular weight of less than or equal to 475 grams per mole; where the composition is melted and then annealed at a temperature between a melting point and a glass transition temperature of the composition; the composition having a charge mobilitythat is greater than a comparative composition that is either not annealed or annealed atthe same temperature between the melting point and the glass transition temperature but without being subjected to prior melting.
Patent TW-201624621-A (TW)
Title: Memory device and manufacturing method of the same
Inventor: HU CHIH-WEI
IPC: H01L27/105
Filed: 2015-01-12
Abstract: A method is provided for manufacturing a memory device. A strip of semiconductor material is formed having a memory region, a first contact landing area region and a switch region between the memory region and the first contact landing area region. A memory layer is formed on surfaces of the strip in the memory region. A plurality of memory cell gates is formed over the memory region of the strip. A switch gate is formed over the switch region of the strip. A doped insulating material is deposited over a portion of the strip between the first contact landing area region and the memory region. Diffusion of dopant is caused from the doped insulating material into the strip in the portion of the strip.
Patent TW-201535101-A (TW)
Title: Behavior modification of a power supply in response to a detected condition
Inventor: CASTILLO SAMANTHA JEAN
IPC: G06F1/26
Filed: 2015-01-21
Abstract: Examples herein disclose a first power supply comprising a controller to detect a condition associated with a device. The first power supply includes a converter to modify behavior of the first power supply in response to the detected condition associated with the device.
Patent TW-201539114-A (TW)
Title: An agglutinant for pellicle and a pellicle including the same
Inventor: HORIKOSHI JUN
IPC: C09K11/06
Filed: 2015-02-25
Abstract: There is provided a pellicle 1 for lithography having a frame 12, a film 11 and an agglutinant layer 13 (an adhesive to bond the pellicle on a photomask), in which the agglutinant layer 13 is doped with a luminescence material so as to facilitate the inspection of the quality of the adhesion between the agglutinant layer 13 and the photomask; preferably the luminescence material is a kind that glows in response to UV irradiation, and a preferable dosage of the luminescence material is no less than 0.01 mass % but less than 1.0 mass %.
Patent TW-201536530-A (TW)
Title: Biaxial elongated polyamide film and method for producing the same
Inventor: KOBAYASHI AI
IPC: B29C55/16
Filed: 2015-02-25
Abstract: Provided is a biaxial elongated polyamide film characterized by, after a boiling treatment in 100 DEG C boiling water for 5 minutes, the detected shrinkage on a longitudinal direction (MD) and a lateral direction (TD) while film-production are both under 2.0%.
Patent TW-201604531-A (TW)
Title: GaAs crystal
Inventor: TANIZAKI KEISUKE
IPC: H01L33/30
Filed: 2015-03-13
Abstract: Provided is a GaAs crystal (35) wherein, the Raman spectrum is measured at s points within a plane (100), and in a case where, with respect to the Raman spectrum measured at the i-th point, xi is the Raman shift of a first peak attributed to the oscillation of the longitudinal optical phonons of the GaAs and xBL is the Raman shift of an emission line peak of neon, [Delta]x(1) in formula 1 is no more than 20cm<SP>-1</SP>. In formula 1, i and s are each a natural number greater than 0.
Patent TW-201609607-A (TW)
Title: Press-fitting material
Inventor: IKEBE TETSUNORI
IPC: C10B29/06
Filed: 2015-03-31
Abstract: To provide a press-fitting material that can improve the sealing of the gaps in kiln. Provided is a press-fitting material applied to kiln, in which the mixture composition is adjusted so as to accompany a volume expansion of 1.3-fold or more as compared to before heating, when heated under an environment of atmospheric temperature of 80 DEG C to 500 DEG C; for example, in a total amount of 100 mass%, a liquefied gas-including thermoplastic material is admixed by 0.5 mass% or more and 3 mass% or less, and a silicate is admixed by 3 mass% or more and 10 mass% or less.
Patent TW-201636916-A (TW)
Title: Card transaction device
Inventor: LIN HSIN-LUNG
IPC: G06Q20/34
Filed: 2015-04-07
Abstract: A card transaction device is provided. The card transaction device is configured to be used with a portable electronic device. The card transaction device includes a card reading head, a microcontroller, a security element, a first transmission interface, and a converter. The card reading head is configured to read fundamental information of a card. The microcontroller is electrically connected to the card reading head, the security element and the converter.
Patent TW-201544967-A (TW)
Title: Flood disable on network switch
Inventor: YORK JUSTIN E
IPC: G06F15/80
Filed: 2015-04-28
Abstract: Techniques related to network switch flooding are described. In one aspect, a network switch may receive a plurality of node identifiers. The node identifiers may identify nodes reachable via a port of the switch. Flooding on the port may be disabled. Traffic destined for nodes reachable via the port may be sent on the port.
Patent TW-201546480-A (TW)
Title: Durable anti-reflective articles
Inventor: AMIN JAYMIN
IPC: G02B1/11
Filed: 2015-05-12
Abstract: Embodiments of durable, anti-reflective articles are described. In one or more embodiments, the article includes a substrate and an anti-reflective coating disposed on the major surface. The article exhibits an average light transmittance of about 94% or greater over an optical wavelength regime and/or an average light reflectance of about 2% or less over the optical wavelength regime, as measured from an anti-reflective surface. In some embodiments, the article exhibits a maximum hardness of about 8 GPa or greater as measured by a Berkovich Indenter Hardness Test along an indentation depth of about 50 nm or greater and a b* value, in reflectance, in the range from about -5 to about 1 as measured on the anti-reflective surface only at all incidence illumination angles in the range from about 0 degrees to about 60 degrees under an International Commission on Illumination illuminant.
Patent TW-201535535-A (TW)
Title: Semiconductor device and method for manufacturing the same
Inventor: YAMAZAKI SHUNPEI
IPC: H01L29/78
Filed: 2010-11-26
Abstract: Objects are to provide a semiconductor device for high power application in which a novel semiconductor material having high productivity is used and to provide a semiconductor device having a novel structure in which a novel semiconductor material is used. The present invention is a vertical transistor and a vertical diode each of which has a stacked body of an oxide semiconductor in which a first oxide semiconductor film having crystallinity and a second oxide semiconductor film having crystallinity are stacked. An impurity serving as an electron donor (donor) which is contained in the stacked body of an oxide semiconductor is removed in a step of crystal growth; therefore, the stacked body of an oxide semiconductor is highly purified and is an intrinsic semiconductor or a substantially intrinsic semiconductor whose carrier density is low. The stacked body of an oxide semiconductor has a wider band gap than a silicon semiconductor.
Patent TW-201701035-A (TW)
Title: Surface light source module
Inventor: CHANG JUNG-WEI
IPC: G02F1/1335
Filed: 2015-06-17
Abstract: A surface light source module includes a light guide plate, a reflective sheet, an adhesive and a light emitting assembly. The light guide plate has a light incident surface and a bottom surface adjacent to the light incident surface, wherein the reflective sheet is disposed on the bottom surface, the adhesive is adhered between the bottom surface and the reflective sheet, and the light emitting assembly is disposed beside the light incident surface. A refractive index of the adhesive is N1, a refractive index of the light guide plate is N2, wherein 63% ≤ N1/N2 ≤ 95%. The light emitting assembly includes a plurality of light emitting elements, wherein a distribution curve of luminous intensity of each of the light emitting elements satisfies following conditions: (1) an absolute value of a distribution angle at 50% of luminous intensity is smaller than or equal to 55 DEG; (2) a sum of luminous energy at the absolute values of the distribution angles greater than 70 DEG is smaller than or equal to 10% of a total lumens of the light emitting element. The surface light source module has better light utilization efficiency. Further, another surface light source module is also provided.
Patent TW-201624473-A (TW)
Title: Front access apparatus
Inventor: TSENG CHEN
IPC: G11B33/04
Filed: 2015-06-26
Abstract: A front access apparatus is configured such that hardware components of a server can be accessed from the front of the server. The apparatus comprises a server tower having a front side, a rear side, and at least one chassis. The chassis comprises a motherboard and at least one hard drive housed in the chassis at the front side, the hard drive adapted to be spaced apart above the motherboard. A bracket can support the hard drive. The motherboard I/O and the hard drive are accessible from the front side. The hard drive can be configured in the apparatus such that the hard drive is removable and hot-swappable. The apparatus can comprise at least one coupling port used to couple peripheral devices located at the front side. The apparatus can comprise a front panel attached to the front side through which the at least one coupling port can be accessed.
Patent TW-201606148-A (TW)
Title: Oxide dielectric and method for manufacturing same, and solid state electronic device and method for manufacturing same
Inventor: SHIMODA TATSUYA
IPC: C01G29/00
Filed: 2015-07-16
Abstract: To provide an oxide dielectric having excellent properties and a solid state electronic device (e.g., a capacitor, semiconductor device, or micro-electrical-mechanical system) equipped with the oxide dielectric. An oxide layer (30) including one of the oxide dielectrics of the present invention is a layer of oxide (which may have unavoidable impurities) that includes bismuth (Bi) and niobium (Nb), and has a first crystal phase of a pyrochlore-type crystal structure and a second crystal phase of a [beta]-BiNbO4-type crystal structure. In addition, the content of the first crystal phase and the content of the second crystal phase are adjusted in the oxide layer (30), the dielectric constant of the first crystal phase decreasing with the rise in the temperature of the oxide layer (30) in a temperature range of 25 DEG C to 120 DEG C and the dielectric constant of the second crystal phase increasing with the rise in the temperature of the oxide layer (30) in said temperature range.