baber/WOPTO huggingface dataset:
Patent TW-374820-B (TW)
Title: Turbocharging system with integral assisting electric motor and cooling system therefor
Inventor: HALIMI EDWARD M
IPC: F02B37/14
Filed: 1996-09-17
Granted: 1999-11-21
Abstract: An exhaust gas-driven turbine drives a compressor to charge an internal combustion engine. An integral motor is positioned on the connecting shaft to add power to the turbocharging shaft, especially at low exhaust gas volume. Cooling for this motor includes circulation of engine oil therearound and may include insulation to limit heat inflow from the turbine and may include air flow through the motor to carry away heat inflow from the turbine.
Patent TW-351844-B (TW)
Title: Method for testing semiconductor device, test apparatus and system
Inventor: MOMOHARA TOMOYOSHI
IPC: H01L21/66
Filed: 1997-01-30
Granted: 1999-02-01
Abstract: A method for testing semiconductor memory device is characterized such that: (a) in testing the semiconductor memory device the functional test will focus on the good/bad rate of the memory grid in the semiconductor memory device as the basic requirements for evaluation, (b) the critical item to be tested is the direct current characteristics of the semiconductor memory device; (c) basing on the test result of the good/bad rate of memory grid noted in the semiconductor memory device, the memory addresses and the replacement data applied in the replacing stand-by row/column in the arithmetic operation in the bad grid can be precisely located, the (c) engineering shall be carried out simultaneously with (b) engineering.
Patent TW-367553-B (TW)
Title: Manufacturing method for MOSFET with intervals less than 0.5 micrometer and employing negative photo-resist and exposure of de-focus to flatten the shallow trench with insulation material filled
Inventor: DAI CHANG-MING
IPC: H01L21/302
Filed: 1997-01-31
Granted: 1999-08-21
Abstract: The invention provides a kind of global flatness process so that the insulation material filled into narrow shallow trench and wide shallow trench can be flattened in the MOSFET component structure. The process employs a layer of negative photo-resist and exposure of de-focus and the same mask used for the shallow trench forming of positive photo-resist that the photo-resist plugs can only be formed in the lower plane area. So, after the insulation layer being filled into the narrow and wide trenches, it can still keep the flatness of the plane. After the flattening process, it need an RIE process with etching selection ratio at 1:1.
Patent TW-354423-B (TW)
Title: A manufacturing process for improving a staged covering ability
Inventor: LI SHING-LUNG
IPC: H01L23/50
Filed: 1997-03-13
Granted: 1999-03-11
Abstract: A method for an integrating circuit to be line connected to the semiconductor wafer, the wafer has semiconductor elements formed thereon, a first dielectric layer formed on the wafer as an insulating layer of the elements, comprising the steps of: forming a first metal layer on the first dielectric layer as an inner connecting line; forming a composite dielectric layer on the second metal layer, the composite dielectric layer includes at least a first sublayer and a second sublayer with different etching speed, the second sublayer is formed on the first sublayer, the etching speed of the first sublayer is large than that of the second sublayer; forming an photoresistor on the composite dielectric layer for defining a dielectric window; by the photoresistor as a mask, by wet etching technology, at least etching the first sublayer of the composite dielectric layer, after etching the second sublayer forming as a dielectric window, the longitudinal depth of the window will large than that of the transversal depth; by the photoresistor as a mask, by dry etching technology, at least etching the first sublayer of the composite dielectric layer to the first metal layer for forming a dielectric layer; removing the photoresistor, and forming a second metal layer on the composite dielectric layer and the dielectric window.
Patent TW-344006-B (TW)
Title: Method and device for inserting a column of stabilizing material into the ground
Inventor: OCKIER MARTIN LOUIS
IPC: E02D3/08
Filed: 1997-03-14
Granted: 1998-11-01
Abstract: Articles under inspection as a reference pattern; a calculation process of examining the picture image of the reference pattern and the picture images of the other articles under inspection, and calculating the non-consistency of brightness data for each pixel corresponding to an identical portion of the articles; a mask pattern setting process of finding the pixels of the portion where the non-consistency of the calculated brightness data exceeds a prescribed threshold, and constituting a mask pattern by setting the thus found pixels; and a process of carrying out a pattern matching by inspectioning the picture image of the reference pattern with the picture images of the other articles under inspection after excluding the pixels constituting the mask pattern.
Patent TW-330150-B (TW)
Title: Hooking fastener and diaper using the same
Inventor: MATSUSHITA MICHIYO
IPC: A61F13/62
Filed: 1997-04-22
Granted: 1998-04-21
Abstract: A hooking fastener comprising a male sheet of a hooking head having a plurality of protuberances and a female sheet of a hooking head for hooking the protuberances, which is characterized in that: the female sheet will partially protrude toward the male sheet.
Patent TW-375754-B (TW)
Title: Emitter structure of field emission display and method for fabricating thereof
Inventor: TING CHIN-LUNG
IPC: H01J1/30
Filed: 1997-08-15
Granted: 1999-12-01
Abstract: An emitter structure for the field emission display and method for fabricating the same includes forming a first insulating layer on the cathode; depositing a first conductive layer on the first insulating layer; etching the first conductive film to form a tip structure which look like a bow structure from the side view and a triangular structure from the top view; subsequently, forming a second insulating layer on the first conductive layer, where the first conductive film is sandwiched between the first and the second insulating layers and the tip structure projects outside the scope of the second insulating layer and the first insulating layer; then depositing a second conductive layer on the second insulating layer as control gate.
Patent TW-350169-B (TW)
Title: Delay stage with steep edges
Inventor: VON BASSE PAUL-WERNER
IPC: H03K5/133
Filed: 1997-08-23
Granted: 1999-01-11
Abstract: A delay stage with steep edges, having the first flip (M1, M2) and the second flip (M3, M4) in serial, being the input of the first flip match the input of the delay class (E) and the output of the second flip to the output of the delay class (D), and in connection as p-channel transistor (M3) of the second flip at between the gate and the delay output, in connection as n-channel transistor (M6) with the capacitor between the delay class output and the second flip n-channel transistor gate.
Patent TW-412470-B (TW)
Title: Diamond disc tool for cutting granite, marble, reinforced concrete and stony materials in general
Inventor: DE GENNARO GIOVANNI
IPC: B23D61/02
Filed: 1997-10-15
Granted: 2000-11-21
Abstract: A diamond disc tool for cutting granite, marble, reinforced concrete and stony materials in general comprises a disc-like core made of a steel sheet material having an axial hole therethrough for coupling to a mandrel, on the periphery of the disc-like core being applied an abrading portion including abrading powders or a cobalt-bronze and synthetic diamond mixed powder, the disc-like core being provided with a plurality of throughgoing hole for dissipating the heat generated by the cutting friction.
Patent TW-492999-B (TW)
Title: Process for preparing mixed cooling-media
Inventor: SUGANO KIYOMITSU
IPC: C09K5/04
Filed: 1997-11-28
Granted: 2002-07-01
Abstract: A method for manufacturing the mixed cooling-media, said method being able to manufacture the homogenous mixed cooling-media by short-time-spending, effective simple mixing of plural types of cooling-medium components in tanks or bombs. The introduction sequence of the cooling-media is so selected that the cooling-medium components (group) latest introduced into the vessel has a lower specific weight in liquid under the introduction temperature than that of the earlier introduced cooling-medium components (group). In case of a system consisting of three specific components, the introduction sequence is selected so that the total specific weight of the two of the earlier introduced components is reduced and that the latest introduced component has a vapor pressure of liquid phase higher than that of the group of the cooling-medium components already introduced into the vessel, and the cooling-medium components are introduced into the inner of the liquid phase of the cooling-medium components (group) already introduced.
Patent TW-353180-B (TW)
Title: A method and apparatus for bit cell ground choking for improved memory write margin
Inventor: GREASON JEFFREY K
IPC: G11C11/34
Filed: 1997-12-26
Granted: 1999-02-21
Abstract: An static random access memory (SRAM) comprising: an SRAM cell having a first node, the first node being a first ground reference; and a circuit configured to receive a first signal and coupled to drive the first node, the circuit further configured to drive the first node to a first voltage if the first signal is in a first state, the circuit configured such that the first node is at a second voltage if the first signal in a second state, the first signal configured to be in the first state to indicate a write operation and in the second state to indicate a non-write operation, the first voltage being greater than the second voltage.
Patent TW-493312-B (TW)
Title: Power transmission apparatus and power transmission method
Inventor: NAGAI TAMIJI
IPC: H04W88/00
Filed: 1998-02-03
Granted: 2002-07-01
Abstract: The present invention relates to power transmission apparatus and power transmission method, in which the subject is to increase the efficiency of power transmission from the primary coil to the secondary coil. The solving means of the present invention is to provide the followings: a signal generation means for output the oscillation signal; a current supplying means for supplying current to the primary coil; the drive means, which controls the conduction or power disconnection of the primary coil based on the frequency of oscillation signal; and the primary coil, which drives and controls the conduction and power disconnection of the formed current so as to generate the magnetic flux that varies with time; and the secondary coil, which generates the induced electric power in accordance with the linkage of magnetic flux generated by the primary coil, and generates the induced current from the resonant inductive power under the condition of having higher frequency as compared with the frequency of the oscillation signal. Because the resonant frequency of the secondary coil side is higher as compared with the frequency of the oscillation signal at the primary coil side, the capacitive impedance can be decreased so as to increase the effective Q value. Therefore, the coupling coefficient can be increased.
Patent TW-504508-B (TW)
Title: Atropisomers of 3-aryl-4(3h)-quinazolinones
Inventor: WELCH WILLARD MCKOWAN JR
IPC: A61K31/517
Filed: 1998-02-25
Granted: 2002-10-01
Abstract: The present invention relates to novel atropisomers of 2-(aryl or heteroaryl)-3- aryl-4(3H)-quinazolinones of the formula I, and their pharmaceutically acceptable salts. And pharmaceutical compositions and methods of treating neurodegenerative and CNS- trauma related conditions. An atropisorner of the formula, wherein R2 is a phenyl group of the formula Ph2 or a five or six membered heterocycle, wherein said 6-membered heterocycle has the formula, wherein ""N"" is nitrogen: wherein said ring positions ""K"", ""L"" and ""M"" may be independently selected from carbon or nitrogen with the proviso that (i) only one of ""K"", ""L"" and ""M"" can be nitrogen and (ii) when ""K"", ""L"" or ""M"" is nitrogen, then its respective R15, R16 or R17 is absent; wherein said five membered heterocycle has the formula, wherein said ""T"" is -CH-, N, NH, or O; wherein said ring positions ""P"" and ""Q"" may be independently selected from carbon, nitrogen, oxygen or sulfur; with the proviso that (i) only one of ""P"", ""Q"" or ""T"" can be oxygen, NH or sulfur; (ii) at least one of ""P"", ""Q"" or ""T"" must be a heteroatom; (iii) when ""P"" or ""Q"" is oxygen or sulphur then its respective R15 or R16 is absent; and (iv) when ""Q"" is sulfur, ""T"" is not -CH-; wherein said Ph2 is a group of formula, R3 is hydrogen, halo, or (C-C4)alkyl; R5 is halo or CCl3; R6 is hydrogen; R7 is hydrogen or halo; R8 is hydrogen; R9is hydrogen, halo or (C1-C4)alkyl; R10 is hydrogen or halo; R11 and R14 are selected, independently, from hydrogen, halo, or C1-4alkyl; R12 is hydrogen, -CN or halo; R15 and R16 are, independently, selected from hydrogen, CN, C1-4alkyl or halo; R17 is hydrogen, -CN, (C1-C6)alkyl, amino-(C1-C6)alkyl-, (C1-C6)alkyl-NH-(C1-C6)alkyl-, di(C1-C6)alkyl-N-(C1-C6)alkyl-, halo, CF3, -CHO or (C1-C6)alkoxy, wherein the dashed bond represented an optional double bond; and the pharmaceutically acceptable salts of such compounds.
Patent TW-477956-B (TW)
Title: Method for integrating a virtual machine with input method editors
Inventor: SILVER DAVID M
IPC: G06F9/44
Filed: 1998-04-02
Granted: 2002-03-01
Abstract: A JAVA-based virtual machine that supports input method editor (IME) functionality in three contexts:(1) using JAVA-based IMEs with a JAVA virtual machine; (2) writing JAVA-based IMEs; and (3) integrating a JAVA virtual machine to system IMEs. The virtual machine includes a windows manager, an input method manager, one or more IMEs and/or keyboard drivers (KBDs), and a component. The virtual machine may also include and IME bridge for integrating the virtual machine with a system IME. The windows manager serves as a gateway between the operating system and the virtual machine. The input method manager (IMM) serves as a router between the windows manager and a plurality of IMEs and keyboards driver (KBDs). The IME includes a look-up table of composed characters that are indexed by Unicode keyboard commands. The component typically renders a user interface that allows the user to manipulate the composed characters returned by the IME. The functionality of the IME and the component may vary from platform to platform, and from user to user. The virtual machine can implement a predefined set of interfaces that allow the IME and the component to communicate with each other and with the windows manager and the input method manager. These predefined interfaces allow users to modify the functionality of the IME and component and integrate these modified elements with the virtual machine.
Patent TW-419788-B (TW)
Title: Method of using retardation layer to fabricate miniaturized contact window
Inventor: JENG SHIANG-YUAN
IPC: H01L21/768
Filed: 1998-07-22
Granted: 2001-01-21
Abstract: This invention discloses a novel method of punching through plural layers to form contact window. The first dielectric layer is deposited on the semiconductor device structure of semiconductor substrate. The conduction layer with defined pattern is formed on the first dielectric layer, and covered by a second dielectric layer. A retardation layer is deposited to cover the second dielectric layer, in which the retardation layer has a first etching rate. The third dielectric layer is deposited to cover the retardation layer, in which the third dielectric layer has a second etching rate that is higher than the first etching rate. A mask, which has an open with a first size located on top of the semiconductor device structure that is to be used as the electrical contact, is formed on the third dielectric layer. A contact open is etched to punch through the first dielectric layer, the second dielectric layer, the third dielectric layer, part of the retardation layer that is not covered by the mask, until reaching the semiconductor device structure to be contacted, in which the contact window punching through the third dielectric layer has the first size and the retardation layer is etched with an angle. Because the first etching rate is smaller than the second etching rate, the contact open, which punches through the second and the first dielectric layers below the retardation layer with an angle, has a second size smaller than the first size so as to complete the fabrication of contact open during the integrated circuit manufacturing process.
Patent TW-392052-B (TW)
Title: Method for controlling at least two interdependent chemicals in the fluids of at least two continuously stirred tank reactors and automatic control system thereof, and method for controlling the sodium-to-phosphate ratio of the fluids of at least
Inventor: GUNTHER JOHN C
IPC: G01N33/18
Filed: 1998-08-13
Granted: 2000-06-01
Abstract: Two control methods and systems for automatically achieving and maintaining a desired sodium/phosphate ratio and phosphate concentration of the boiler waters in a plurality of parallel industrial boilers linked by a common feedwater line for minimizing corrosion. The first control system uses an adaptive controller that models the boilers which enables the system to predict boiler pH and phosphate concentrations at any future time given the feed rates, feed concentrations of high and low sodium/phosphate stocks, blowdown rate, mass of the boiler water, initial boiler phosphate concentration and initial pH. Once these future concentrations are determined, the controller then determines a common normalized control (target) region among all the boilers and feed  rates that will drive at least one of the boilers into that region in the least amount of time. Subsequent iterations of feed rates are made based on updated boiler water concentrations to drive all of the boiler waters into that target region. The second control system monitors a maximum cycle boiler ratio to keep the boiler waters within the phosphate control range of the system. This arrangement allows for the control of sodium by switching between the high and low ratio sodium/phosphate stocks based on the average sodium-to-phosphate ratio among all the boilers with respect to a desired average predetermined sodium-to-phosphate ratio.
Patent TW-413654-B (TW)
Title: Modular tool system
Inventor: COLE JAMES E
IPC: B25B13/46
Filed: 1998-10-15
Granted: 2000-12-01
Abstract: A modular tool system includes a tool head, a handle, and an intermediate piece disposed therebetween. The handle includes a first pin for coupling the handle to the intermediate piece and the intermediate piece includes a second pin for coupling the intermediate piece to the tool head. The first and second pins each include a splined portion for engaging splined orifices in the handle and intermediate pieces, respectively, and a shank for removably engaging shank-receiving orifices in the intermediate piece and the tool head, respectively. When the shanks are engaged with their respective shank-receiving orifices, the handle can be moved along the first pin to selectively lock the handle to the intermediate piece and the intermediate piece can be moved along the second pin to selectively lock the intermediate piece to the tool head. The handle can also be moved along the first pin to selectively unlock the handle for rotational movement about the pin relative to the intermediate piece and the intermediate piece can be moved along the second pin to unlock the intermediate piece for rotational movement about the pin relative to the to the tool head. If desired, the intermediate piece can be removed and the handle can be coupled directly to the tool head by inserting the first pin into the tool head's shank-receiving orifice.
Patent TW-442873-B (TW)
Title: Three-dimension stack-type chip structure and its manufacturing method
Inventor: SHIUAN MING-JR
IPC: H01L21/60
Filed: 1999-01-14
Granted: 2001-06-23
Abstract: There are provided a three-dimension stack-type chip structure and its manufacturing method. In the three-dimension stack-type chip structure, the substrate with integrated circuit devices is provided with contact points on two sides of the substrate and electrically connected to the devices. A conductive bump is formed on each contact point. Therefore, the chip can be connected to the external signal source via the contact points, or stacked with other chips.
Patent TW-538153-B (TW)
Title: Process for air-jet texturing of frill yarn and yarn-finishing device and the application thereof
Inventor: BERTSCH GOTTHILF
IPC: D02J1/08
Filed: 1999-03-02
Granted: 2003-06-21
Abstract: A process for air-jet texturing, this new solution allows to enormously increase the power for the air-jet texturing in a range from 800 to 1500 m/min, and on the other hand, with unchanged gut quality. It is on the one hand based on a texturing nozzle corresponding to WO 97/30200, and strives for a Mach number as high as possible greater than 2 on the other hand. Furthermore, a heat treatment before and/or after the texturing is suggested. The pressure of the treating air is increased to 10 to 14 bar or more.
Patent TW-415122-B (TW)
Title: Active materials for non-aqueous electrolyte second order battery and production method therefor; and the non-aqueous second order battery utilizing the positive active materials
Inventor: MATSUMOTO KAZUNOBU
IPC: H01M10/05
Filed: 1999-03-22
Granted: 2000-12-11
Abstract: The invention provides the positive active materials for non-aqueous electrolyte second order battery, which is possible to elevate the discharge capacity, discharge capacity maintaining rate and discharge capacity with high efficiency and the production method therefor so that non-aqueous electrolyte second order battery with superior performance can be manufactured. In spite of the positive active materials for non-aqueous electrolyte second order battery, LiCoO2, expressed in the operation formula, the said LiCoO2 is composed of the mixture of the following first order particles and second order particles. It possesses the first particles of small crystals with average grain diameter less than 5 m and the second order particles congregated by the small crystals with grain diameter range 0.4 to 10 mu m based on SEM observed projection map in Farey under the range of 0.4 to 10 mu m. It is featured as the positive active materials for non-aqueous electrolyte second order battery used with Co and Li, in which the molar fraction is in range of 0.97 to 1.03. The better part is that at least part of the said small crystals composing of the second order particles are integrated by sintering. The said second order particles are in form of ball or elliptical ball. Moreover, the particles which is observed in accordance with SEM projection map and are more than 9 m in Farey diameter contain more than 90% second order particles. Besides, the particles which is observed in accordance with SEM projection map and are more than 6 mu m in Farey diameter has the volume ratio more than 70% of the whole mixture.