Patent FR-1578214-A (FR)
IPC: H01R12/55
Filed: 1968-07-04
Granted: 1969-08-14
Abstract: 1,239,631. Welding by pressure. WESTERN ELECTRIC CO. Inc. 1 July, 1968 [6 July, 1967], No. 31259/68. Heading B3R. [Also in Division H1] In bonding a workpiece to a substrate, pressure is applied to the workpiece positioned on the substrate through an elastically or plastically compliant means and bonding of the workpiece to the substrate is effected by thermocompression or ultrasonic bonding, the compliant means being subsequently removed. A gold lead 14, Fig. 1A, to be bonded to a gold land 12 on a high alumina ceramic substrate 10 is placed on the land and a wire 16 of aluminium is clamped on the lead 14 by a heated ram 18 with the substrate 10 on a rigid support. The wire 16 deforms around the lead which also deforms and when a bonding is complete the wire is deformed to completely cover the bond area on both workpieces the bond being by diffusion. An exact replica of the bond area is left on the wire when removed. The wire does not bond to the lead because of its oxide film and similar film forming metal, e.g. nickel, titanium and tantalum may be used for the wire 16. In bonding the gold leads 30, Fig. 5, from a silicon chip 28 to the metal lands (not shown) on a substrate 32 a hollow frame 34 is placed around the clip 28 and on the leads 30 to extend above the chip. A hot ram is pressed on the frame 34 to deform the leads and frame and effect bonding. A 16 lead beam leaded device is bonded, in an example, to the Au-Ti land areas on a glass substrate using aluminium with a square hole punched therein around the device, pressure of 48 lb. being applied for 1À5 sees. by a stainless steel ram with a flat Ni-Cr-Fe tip heated by an electric cartridge heater to 400‹ C. If the leads of a strong beam lead device are to be bonded a solid sheet of compliant material covers the entire device and ram pressure is applied to deform the sheet around the device and leads. Heat for the thermo-compression bonding may be provided by hot gas, resistance heating or heating the anvil. In another arrangement a substrate 42, Fig. 8, is placed in a depression 40 in a table 38 connected to an ultrasonic vibrator horn and a beam lead device 44 is placed on the substrate, a plunger 46 having a tip 48 of electrically deformative material, e.g. silicon rubber being actuated hydraulically, by cam or by solenoid to press on the device 44. Ultrasonic energy is supplied to vibrate the table and the tip 48 deforms around the device 44 and clamps all the leads. Heat may be supplied by the plunger 46. The balled ends of two wire leads may be bonded to land areas on a substrate by two spring loaded heated plungers cooperating with an ultrasonically vibrated table. The leads of a beam lead device may be similarly bonded using a number of spring pressed plunger sheld in appropriate array on a jig plate. In bonding a silicon chip to a copper stud for use as a power rectifier the stud is supported in a recessed anvil with a brazed on molybdenum, tungsten or silver impregnated tungsten compact above the anvil surface and in contact with a metallized silicon wafer. A piece of aluminium is pressed against the water by a bonding tip which supplies ultrasonic bonding energy. Heat is also supplied. Similarly a gallium-arsenide junction laser diode metallized with gold is bonded to an Au-Ti plated substrate. A machine for use in bonding according to the invention comprises a base-plate coupled to an ultrasonic horn and having an apertured substrate receiving plate secured thereto. Vertically mounted above the base-plate by rack and pinion is an hydraulic or solenoid operated ram device for thermo-compression bonding, the tip of the ram being of plastically deformable metal, being apertured or being a flat piece of molybdenum for use with a compliant frame. For ultrasonic bonding the ram device is replaced by a frame to contain a spring loaded plunger carrying jig or by an ultrasonic horn. A binocular microscope is provided on the machine. Beam lead integrated circuits may be mounted by adhesive on an aluminium ribbon and after indexing of the ribbon the devices are bonded to a substrate by the bonding ram. In ultrasonically bonding metallized silicon chip to a substrate aluminium or P.T.F.E. may be provided between the workpiece and bonding tip.