baber/WOPTO huggingface dataset:
Patent TW-200929711-A (TW)
Title: Connector for card
Inventor: MURAYAMA TAKESHI
IPC: H01R13/193
Filed: 2008-08-06
Abstract: Disclosed is a connector for card which is applied to a structure having a card installed on the installing section of the outer casing, in addition, the present invention is capable of detecting whether if the card has been properly installed and the cover is closed. The connector for card (1) includes an outer casing (2) and a cover (3), in which the outer casing (2) comprises a contact (204b) that is connected with the card and the installing section; the cover (3) is able to rotate and slide when the installing onto the outer case (2) is taken place, and along with the rotation and sliding the cover moves to a certain location in order to be locked onto the outer casing (2). The features of the connector for card can be found as: on the outer casing (2), a first switch mechanism (211) is deployed and is operated by the card, a second switch mechanism (212) is also deployed and is operated by the cover (3). When the cover (3) has been rotated and slid into the locked location on the outer casing (2) under the circumstance of card being installed on the outer casing (2), the first switch mechanism (211) and the second switch mechanism (212) are in connection.
Patent TW-200913056-A (TW)
Title: Plasma processing apparatus, plasma processing method and storage medium
Inventor: MATSUDO TATSUO
IPC: H01L21/3065
Filed: 2008-08-15
Abstract: The present invention provides a plasma processing apparatus, a plasma processing method and a storage medium. The plasma processing apparatus can improve the occurrence of electrification injury greatly, and improve the stability and the reliability of plasma treatment. An upper electrode (38) and a lower electrode (12) are arranged in parallel in a vacuum-exhaustion processing container (10) relatively, and a first high frequency power source (32) applies a first high frequency to the lower electrode (12) through a first matcher (34). The first high frequency power source (32) is controlled by a control unit (68) so that a first phase at which the first RF power has a first amplitude for generating a plasma and a second phase at which the first RF power has a second amplitude for generating substantially no plasma are alternately repeated at predetermined intervals.
Patent TW-200930686-A (TW)
Title: A doped refractory with a high zirconia content
Inventor: CABODI ISABELLE
IPC: C03B5/43
Filed: 2008-08-22
Abstract: The invention provides a fused cast refractory product with a high zirconia content comprising, as a percentage by weight based on the oxides: ZrO2+Hf2O: > 85%; SiO2: 6% to 12%; Al2O3: 0.4% to 1%; Y2O3: ≤ 0.2%; a dopant selected from the group formed by Nb2O5, Ta2O5, and mixtures thereof, in a quantity such that the molar ratio ZrO2/ (Nb2O5+Ta2O5) is in the range 200 to 350.
Patent TW-201011224-A (TW)
Title: Illumination apparatus
Inventor: CHANG CHIA-HAO
IPC: F21V8/00
Filed: 2008-09-12
Abstract: An illumination apparatus including a first light guide plate, a second light guide plate, at least a first light emitting element, at least a second light emitting element, and a driving unit is provided. The first light guide plate has a first surface, a second surface opposite thereto, and a first light incident surface connecting these two surfaces. The second light guide plate has a third surface, a fourth surface opposite thereto, and a second light incident surface connecting these two surfaces. The second light incident surface faces the first light incident surface. The first light emitting element is disposed between the first light incident surface and the second light incident surface and adapted to emit light toward the first light incident surface. The second light emitting element is disposed between the first light emitting element and the second light incident surface, and adapted to emit light toward the second light incident surface. The driving unit is disposed between the first light emitting element and the second light emitting element, and electrically connected to the first light emitting element and the second light emitting element.
Patent TW-200927742-A (TW)
Title: Dibenzothiophene-containing materials in phosphorescent light emitting diodes
Inventor: LIN CHUN
IPC: H01L51/50
Filed: 2008-09-12
Abstract: A new class of dibenzothiophene and/or dibenzofuran-containing compounds are provided. The new compounds may be useful in organic light emitting devices, particularly as the host of an emissive layer having a host and an emissive dopant, or as a material in an enhancement layer.
Patent TW-200924314-A (TW)
Title: Contact and electrical connecting apparatus using it
Inventor: OSATO EICHI
IPC: G01R31/26
Filed: 2008-09-23
Abstract: An electrical connecting apparatus uses a plurality of contacts each of which includes: a principal portion having an outer face curved and directed to a conductive portion of a base plate and received in a recess and a slit of a housing; a front end portion continuous to the front end side of the principal portion and projected upward from the slit so as to be relatively pressed against an electrode of a device under test; and a rear end portion continuous to the rear end side of the principal portion and located in the recess. The front end portion of each contact is projected upward from the slit by the dimension of the thickness of the front end portion or more than that and has an arc-shaped front end face extend in the longitudinal direction of the slit.
Patent TW-200924012-A (TW)
Title: Single wafer implanter for silicon-on-insulator wafer fabrication
Inventor: BLAKE JULIAN
IPC: H01J37/317
Filed: 2008-09-23
Abstract: An ion implanter is disclosed. One such ion implanter includes an ion beam source configured to generate oxygen, nitrogen, helium, or hydrogen ions into an ion beam with a specific dose range, and an analyzer magnet configured to remove undesired species from the ion beam. The ion implanter includes an electrostatic chuck having a backside gas thermal coupling that is configured to hold a single workpiece for silicon-on-insulator implantation by the ion beam and is configured to cool the workpiece to a temperature in a range of approximately 300 DEG C to 600 DEG C.
Patent TW-201012941-A (TW)
Title: Method to improve the activation treatment in Ti-V-Cr based BCC hydrogen storage alloys
Inventor: JENG RONG-RUEY
IPC: H01M4/38
Filed: 2008-09-26
Abstract: The purpose of this invention is to solve the difficulty of activation observed in Ti-V-Cr based hydrogen storage alloys. This is achieved by the addition of 0.05 to 1.0 wt% of Pd element in the Ti-V-Cr based hydrogen storage alloys. It is found that even at room temperature the alloys can absorb hydrogen up to 3.45 wt% without any traditional activation treatment.
Patent TW-200922701-A (TW)
Title: Substrate cleaning apparatus
Inventor: MORISAWA SHINYA
IPC: H01L21/304
Filed: 2008-10-07
Abstract: A substrate cleaning apparatus is used to clean a substrate with a cleaning liquid. The substrate cleaning apparatus includes a substrate holding mechanism configured to hold a substrate horizontally, a rotating mechanism configured to rotate the substrate held by the substrate holding mechanism, a liquid supply nozzle for supplying a cleaning solution to the substrate, and a spin cover provided around the substrate and rotatable at substantially the same speed as the subs0trate. The spin cover has an inner circumferential surface shaped so as to surround the substrate. The inner circumferential surface is, from a lower end to an upper end thereof, inclined radially inwardly.
Patent TW-201016028-A (TW)
Title: Bending vibration absorption pad
Inventor: WANG PI-WEN
IPC: H04R1/00
Filed: 2008-10-09
Abstract: The patent is an invitation of a device that can be placed at the bottom of all kinds of audio equipments. The device is composed of an elastic material treated with viscoelastic (damping) material. When the device vibrates, the damping material on the surface of the elastic material would deform plastically. The vibration energy can then be attenuated and the disturbance due to vibration can be eliminated.
Patent TW-200934785-A (TW)
Title: Compounds for inhibiting KSP kinesin activity
Inventor: SIDDIQUI M ARSHAD
IPC: C07D515/10
Filed: 2008-10-16
Abstract: The present invention relates to compounds of Formula (I), below, (wherein X, R1, R2, R3, p, E, ring A, and ring B are as defined herein). The present invention also relates to compositions (including pharmaceutically acceptable compositions) comprising these compounds, alone and in combination with one or more additional therapeutic agents, and to methods for their use in inhibiting KSP kinesin activity, and for treating cellular proliferative diseases or disorders associated with KSP kinesin activity.
Patent TW-201017866-A (TW)
Title: Fuse for preventing ESD damage and preventing method thereof
Inventor: TENG CHIH-HUI
IPC: H01L21/66
Filed: 2008-10-16
Abstract: The invention relates to fuse for preventing ESD damage and preventing method thereof and provide a plurality of dice having a first pad, a seal ring, a second pad and a third pad, wherein the first pad is electrically coupled to the ring and the second pad is electrically coupled to the third pad to prevent ESD damage.
Patent TW-200931516-A (TW)
Title: Forming method of etching mask, control program and program storage medium
Inventor: YATSUDA KOICHI
IPC: H01L21/3065
Filed: 2008-10-24
Abstract: A feedforward control is performed so that a line width of a mask constituted by an Si3Na layer 102 formed by using a photoresist 105b as a mask is to be the same as a line width of a mask pattern constituted by an SiO2 layer 103 based on a measured line width of the photoresist 105b and the measured line width of the mask pattern constituted by the SiO2 layer 103, for example, a control of a trimming amount of the line width of the photoresist 105b is performed so that the line width of the photoresist 105b is to be the same as the line width of the mask pattern constituted by the SiO2 layer 103.
Patent TW-201019464-A (TW)
Title: One-time programmable memory and operating method thereof
Inventor: LIN CHRONG-JUNG
IPC: H01L29/06
Filed: 2008-11-03
Abstract: A one-time programmable memory cell comprising a gate dielectric layer, a gate electrode, a first source/drain, a second source/drain, a first salicide layer, a capacitive dielectric layer, a first conductive plug and a second conductive plug is disclosed. The gate electrode is disposed on the gate dielectric layer. The first source/drain and the second source/drain are disposed at opposing sides under the gate electrode, respectively. The first salicide layer is disposed on the first source/drain. The capacitive dielectric layer is disposed on the second source/drain. The first conductive plug is disposed on the first salicide layer. The second conductive plug is disposed on the capacitive dielectric layer. The size of the first conductive plug is different form the size of the second conductive plug.
Patent TW-200937616-A (TW)
Title: Methods of forming magnetic vias to maximize inductance in integrated circuits and structures formed thereby
Inventor: GARDNER DONALD
IPC: H01L27/04
Filed: 2008-11-06
Abstract: Methods and associated structures of forming microelectronic devices are described. Those methods may include forming a first layer of a magnetic material on a substrate, forming an oxide layer on the first layer of the magnetic material, forming at least one conductive structure on the first magnetic layer, forming a dielectric layer on the at least one conductive structure, forming a second layer of the magnetic material on the at least one conductive structure, and forming a magnetic via coupled to the first and second layers of the magnetic material, wherein the magnetic via comprises a shape to increase inductance of the inductive structure.
Patent TW-201019193-A (TW)
Title: Sensing apparatus for capacitive touch panel
Inventor: KUO JING-TIN
IPC: G06F3/044
Filed: 2008-11-07
Abstract: A sensing apparatus for capacitive touch panel having plurality of sensing units is provided. The sensing apparatus is utilized to sense the condition of the capacitive touch panel. The sensing apparatus includes a 1st sensor chip, a 2nd sensor chip, a 1st selector unit and a 2nd selector unit. A plurality of scanning signals and a plurality of sensing signals generated synchronously from the 1st sensor chip and the 2nd sensor chip are outputted to the 1st selector unit and the 2nd selector unit. The 1st selector unit and the 2nd selector unit output the sensing signals in accordance with the scanning signals. The 1st selector unit and 2nd selector unit driven to output a plurality of sensing signals by a sequence of the scanning signals results in decreasing the amount of sensing signals for sensing the capacitive touch panel.
Patent TW-200935589-A (TW)
Title: CMOS semiconductor device and method of manufacturing the same
Inventor: MISE NOBUYUKI
IPC: H01L27/092
Filed: 2008-11-17
Abstract: Providing a CMOS semiconductor device using high-k material, where the gate length of the CMOS semiconductor device is precisely defined. A CMOS semiconductor device having a p-type MOSFET and an n-type MOSFET including: a gate electrode of the n-type MOSFET having a first insulating layer of high-k material and a first metal layer of metallic material formed on the first insulating layer, a gate electrode of the p-type MOSFET having a second insulating layer of high-k material and a second metal layer of metallic material formed on the second insulating layer, wherein the high-k material of the first and second insulating layers are different from each other, and the metallic material of the first and second metal layers are the same.
Patent TW-201019863-A (TW)
Title: Manufacturing method of helmet housing
Inventor: SU SHUN-FA
IPC: A42C1/02
Filed: 2008-11-17
Abstract: A manufacturing method of helmet housing is disclosed, which comprises: (a) prepare an outer mold housing, and make the cavity opening of housing face upward; (b) pave a glass fiber material unit inside the outer mold housing fully, pick a conduction current material whose area is smaller than the inner housing area of the outer mold housing, and pave it between the outer mold housing and the glass fiber material unit; and ( c) sprinkle/coat the adhesive agent onto the glass fiber material unit, and apply the air-inflation and the heating operation for diffusing the adhesive agent uniformly and hardening the adhesive, so as to completely wrap the glass fiber material unit and the conduction current material. Mainly, a conduction current material with smaller area can generate the conduction current effect to the adhesive agent, so that the helmet housing made in this way has a uniform structure of encapsulation, thereby generating a very good impact-resistance and the anti-puncture characteristic.
Patent TW-200928612-A (TW)
Title: Illumination optical apparatus, exposure apparatus, and method for producing device
Inventor: NISHIKAWA JIN
IPC: G03B27/52
Filed: 2008-11-20
Abstract: A reflection type illumination optical apparatus, which guides an exposure light EL to a reticle surface Ra via a curved mirror 24, a concave mirror 25, etc. includes a vacuum chamber 1 which accommodates the curved mirror 24, the concave mirror 25, etc,; and a subchamber 4D which is arranged in the vacuum chamber 1 and which accommodates the curved mirror 24. The subchamber 4D has openings 4Da, 4Db through which the exposure light EL coming into the curved mirror 24 and the exposure light EL exiting from the curved mirror 24 pass, respectively. Each of the openings 4Da, 4Db is arranged in the vicinity of a position at which the cross-sectional area of the light flux is smallest. It is possible to decrease the amount of adhesion of minute particles such as debris to the reflecting optical element, without unnecessarily enhancing the ability of the vacuum gas discharge mechanism.
Patent TW-200939277-A (TW)
Title: Linear electron source, evaporator using linear electron source, and applications of electron sources
Inventor: KLEMM GUENTER
IPC: H01J1/30
Filed: 2008-11-24
Abstract: A method of charging a web or foil is described. The method includes guiding a web or foil having a thickness of 10 μm or larger with at least on roller; providing a linear electron source (100) having a housing (112) acting as an anode, the housing having side walls (312); a slit opening (114) in the housing for trespassing of a linear electron beam, the slit opening defining a length direction of the source; a cathode being arranged within the housing and having a first side (413) facing the slit opening; at least one gas supply (70) for providing a gas into the housing; and a power supply for providing a high voltage between the anode and the cathode; and emitting the linear electron beam, wherein the high voltage is adjusted for providing an electron energy to implant electrons of the electron beam within the web or foil.
Patent TW-200938467-A (TW)
Title: Transport device and transport method of segmented electronic component
Inventor: IWATA YASUHIRO
IPC: B65G49/07
Filed: 2008-11-25
Abstract: On a table (TA) of an apparatus for transferring separated electronic component (P), a first storing section (S1) and a second storing section (S2) are arranged adjacent to each other. The apparatus is provided with a fixing member (HA), which sucks a plurality of electronic components (P) at one time on the lower surface, and an unfixing mechanism which selectively stops suction of the electronic components (P) fixed to the fixing member (HA) and brings the electronic components (P) to be in an unfixed state. When the fixing member (HA) is positioned above the first storing section (S1), the unfixing mechanism stops suction of the electronic component at positions of one color of a checkered pattern among the electronic components (P) sucked by the fixing member (HA). When the fixing member (HA) moves to above the second storing section (S2), all the electronic components (P) are arranged in staggered state at a fixed pitch in the first storing section (S1) and the second storing section (S2), by stopping suction of other electronic components (P) sucked by the fixing member (HA). A transfer mechanism is also provided for sucking and transferring the electronic components (P) of one line along an X direction among the electronic components (P) stored in the staggered stated on the table (TA).
Patent TW-200931326-A (TW)
Title: Identification and verification of an unknown document according to an Eigen image process
Inventor: LEI YIWU
IPC: G06K9/78
Filed: 2008-11-25
Abstract: Techniques are described for identifying and validating security documents according to an Eigen image process method. For example, a security document authentication device selects one or more reference documents of different document types, calculates, from the reference documents, one or more Eigen images and Eigen values for the plurality of different document types, and calculates a reference weight coefficient vector of each of the plurality of document types. Upon receiving at least one captured image of an unknown document, the device calculates a weight coefficient vector of the captured image, compares the weight coefficient vector of the captured image and each of the reference weight coefficient vectors of the document types to calculate a plurality of distances, and, based on the plurality of distances, identifies the unknown document as one of the plurality of document types.
Patent TW-200943297-A (TW)
Title: Storage device and information re-recording method
Inventor: SHIIMOTO TSUNENORI
IPC: G11C13/00
Filed: 2008-12-01
Abstract: Provided is a storage device wherein a voltage requiring control is reduced and a peripheral circuit scale is reduced. A first pulse voltage (VBLR) is supplied to an electrode (11) of a variable resistance element (10) from a first power supply (21) through a bit line (BLR), a second pulse voltage (VWL) for cell selection is supplied to a control terminal (20c) of a transistor (20) from a second power supply (22) through a word line (WL), and a third pulse voltage (VBLT) is supplied to a second input/output terminal (20b) of the transistor (20) from a third power supply (23) through the bit line (BLT). At the time of rewriting information, a cell voltage and a cell current can be varied (reduced or increased) by adjusting the voltage value (VBLT) of the third power supply (23) by the adjusting circuit (24).
Patent TW-201024363-A (TW)
Title: Thermoplastic vulcanizate
Inventor: WU YAO-ZU
IPC: C08L33/08
Filed: 2008-12-24
Abstract: Thermoplastic vulcanizates are provided. The thermoplastic vulcanizate comprises a blending, wherein the blending comprises a vulcanized acrylic rubber distributed among a polyester plastic. The vulcanized acrylic rubber is prepared by reacting acrylic rubber (ACM) with an epoxy group-containing resin as vulcanization agent via dynamic vulcanization.
Patent TW-201024527-A (TW)
Title: Independent-air-supply internal combustion engine with no compression stroke
Inventor: Liu bang-jian
IPC: F02B15/02
Filed: 2008-12-30
Abstract: The present invention relates to an independent-air-supply internal combustion engine with no compression stroke, comprising: a main body, an input unit, an output unit and an exhaust unit. The main body has at least one cylinder. The input unit is connected to the cylinder for inputting a high pressure fuel to the cylinder, so the interior of the cylinder is provided with a set pressure. The output unit is connected to the cylinder for outputting power generated through the combustion of the high pressure fuel. The exhaust unit is connected to the cylinder for exhausting waste gas after the combustion of the high pressure fuel. By directly inputting the high pressure fuel to the cylinder, the interior of the cylinder is directly provided with the set pressure for processing the combustion stroke. In this invention, each output of the internal combustion engine is only subject to the combustion and exhausting strokes, so the operation of the engine is smoother, and the rotation speed of the engine can be raised to a very high rotation speed.
Patent TW-201027628-A (TW)
Title: Method for manufacturing trench MOSFET device with low gate charge and the structure thereof
Inventor: HSU HSIU-WEN
IPC: H01L21/336
Filed: 2009-01-07
Abstract: A method for manufacturing trench MOSFET device with low gate charge is shown below: providing a substrate with first conductivity type and there are an epitaxial layer of first conductivity type and a body region of second conductivity type on the substrate. Next step is forming a plurality of trenches on the body region. Third step is forming a first insulative layer on the inner surface of each trench and on the body region. Next step is forming a sidewall spacer of poly silicon on the sidewall of each trench and the partial bottom area of each trench is exposed. Next step is filling an oxide structure and a poly silicon structure inside each trench. Next step is depositing a metal layer on the surface and saliciding the metal as a salicided metal of the first phase. Next step is changing the phase of the salicided metal from first phase to second phase. Thereby, the capacity and the resistance are reduced so as to improve the performance of semiconductor device.