baber/WOPTO huggingface dataset:
Patent JP-H0943509-A (JP)
Title: Scanning and image forming lens and optical scanning device
Inventor: SHIGENIWA NAOKI
IPC: G02B26/10
Filed: 1995-07-28
Abstract: PROBLEM TO BE SOLVED: To provide excellent optical scanning by specifying the relation of a distance from the starting point of deflection of a deflected light beam to a surface to be scanned and a distance from the surface of a third group on the side of the surface to be scanned to the surface to be scanned. SOLUTION: A first group 5 of a scanning/image forming lens is an anamorphic aspherical lens, a surface on the side of a light deflector 3 is a concave surface having a more intense curvature in the direction corresponding to main scanning and a surface on the side of a surface to be scanned 8 is an aspherical surface symmetric to the optical axis. A second group 6 is an anamorphic aspherical lens, a surface on the side of a light deflector 3 is a concave surface having a more intense curvature in the direction corresponding to main scanning and a surface on the side of a surface to be scanned 8 is an anamorphic aspherical surface.  A surface on the side of a light deflector 3 of a third group 7 is a barrel type concave toroidal surface whose radius of curvature in the direction corresponding to sub-scanning becomes smaller as the surface is separated out of the optical axis in the direction corresponding to main scanning. By representing a distance from the starting point of deflection of the deflected light beam by the light deflector 3 to the surface to be scanned 8 by L and a distance from the third group 7 to the surface to be scanned 8 by DBF, the condition shown by 0.1<DBF/L<0.6 is satisfied.
Patent JP-S6350862-A (JP)
Title: Developer
Inventor: MATSUSHIGE NAOKI
IPC: G03G9/08
Filed: 1986-08-21
Abstract: PURPOSE:To obtain the titled developer having improved electric chargeability and fluidity and capable of obtaining a clear image having no fog by sticking very fine powders of silicic acid on the surface of the toner powders, and by setting freely the coarse silicic acid fine powders among the toner powders. CONSTITUTION:The fine silicic acid powders are sticked on the surface of the toners, and the coarse silicic acid powders are set freely among the toner powders. The titled developer is obtd. by externally mixing fine silicic acid powders by means of a dry method, followed by externally mixing the fine silicic acid powders by means of a wet method for relatively short period. The usable toner powder is not specified, if the toner treated with a milling step, the encapsulated toner and the toner powder produced by the suspension polymerization are used. Thus, the toner having the improved electric chargeability and fluidity is obtd.
Patent JP-H0532940-A (JP)
Title: Cleaning and lustering agent composition
Inventor: SAEGUSA KATSUMI
IPC: C09G1/16
Filed: 1991-08-02
Abstract: PURPOSE:To provide a cleaning and lustering agent composition having high drying speed, giving a treated surface having low slipperiness and effective for removing the surface stain of various materials and imparting luster to the surface. CONSTITUTION:The objective composition is produced by compounding (A) 0.01-50wt.% (preferably 1-20wt.%) of silicone resin having or capable of forming a three-dimensional network structure with (B) 0.01-10 wt.% of a nonionic surfactant (e.g. secondary alcohol ethoxylate), (C) 0.01-10wt.% of a silicone oil having a viscosity of 100-100,000cst (e.g. dimethylsilicone oil) and, as necessary, (D) 1-10wt.% of a lower alcohol (e.g. ethanol) and/or a glycol solvent of formula (R and R' are H or 1-8C alkyl; 0<=x<=8; 0<=y<=8).
Patent JP-S6253625-A (JP)
Inventor: KAJIKAWA SABURO
IPC: A47L7/04
Filed: 1985-09-03
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。
Patent JP-H0248188-A (JP)
Title: Positioning of robot
Inventor: TOKIDA HARUHIRO
IPC: G05D3/12
Filed: 1988-08-03
Abstract: PURPOSE:To correct the dynamic error caused during movement of a robot, as sufficiently as it can be used actually by assuming the curved face error using the curved face generating method on the basis of the quantity of error between both the point positioned for every point according to the set input and the actually positioned point. CONSTITUTION:A program necessary for the movement is prestored in a controller 9 and the controller 9 positions a operating part 8 in a plurality of points on the basis of data concerning to the set input and sequentially executes the work necessary for the relation to a work 10. For this execution, if an error is generated between the robot coordinate system of the robot 1 and the work coordinate system of the work 10, the operating part 8 will generate a relative error at a point P with respect to the X-Y-Z coordinate system of the work 10 regardless of the fact that the robot 1 may accurately position the operating part 8 at the position P according to the program. The stop point is corrected from a supposed error curved face derived from the errors of deltaX, deltaY and deltaZ in respective directions using the curved face generating method.
Patent JP-H0641426-A (JP)
Title: Poly@(3754/24)phenylene sulfide) resin composition
Inventor: YABE HIDEMITSU
IPC: C08L81/02
Filed: 1992-07-21
Abstract: PURPOSE:To obtain the resin composition which is less apt to form a flash during molding and excellent in flowability as well as mechanical strength and heat resistance and which is useful particularly in such applications as an injection-molded small precision part. CONSTITUTION:The composition is obtained by melt-kneading 100 pts.wt. blend of 90-50wt.% uncrosslinked poly(phenylene sulfide) resin having a number- average mol.wt. of 7,000-15,000 and 10-50wt.% uncrosslinked poly(phenylene sulfide) resin having a number-average mol.wt. of 3,000-6,000 with 20-150 pts.wt. (non)fibrous reinforcement and 0.1-5 pts.wt. alkoxysilane.
Patent JP-H0748517-A (JP)
Title: Panel vibration damper, production thereof, vibrationdamped panel and production thereof
Inventor: FUJII TADASHI
IPC: C08L95/00
Filed: 1993-08-05
Abstract: PURPOSE:To provide the damper which is excellent in adhesion to the panel to be vibration-damped, vibration-damping properties at temperatures in the wide range of 0-80 deg.C and productivity and is produced at a low cost, and its production process and provide the panel and its production process. CONSTITUTION:The damper is prepared by forming by metal splaying a metallic film on either surface of a sheet made of a thermoplastic composition comprising asphalt, an inorganic filter and a modifier, and the production process for said damper consists of forming a metallic film by metal splaying on either surface of a sheet made of the above composition. The damped panel is prepared by adhering the panel to be vibration-damped to the face of a sheet made from the thermoplastic composition, and the production process for the vibration-damped panel consists of adhering a sheet made from the thermoplastic composition to the panel to be vibration-damped and forming a metallic film by metal splaying on the surface of said sheet.
Patent JP-S5984250-A (JP)
Title: Photoconductive material
Inventor: ARAO KOUZOU
IPC: G03G5/08
Filed: 1982-11-05
Abstract: PURPOSE:To obtain a photoreceptor always stable in photoconductive characteristics, etc. by laminating on a substrate the first amorphous material layer contg. GexSi1-x, and on this layer the second amorphous material layer contg. Si, and rendering a Ge distribution in the first layer nonuniform in the layer thickness direction. CONSTITUTION:The first layer region 103 made of an amorphous material contg. GexSi1-x(0.95<x<=1) is formed on a substrate 101, and the second layer region 104 made of an amorphous material contg. Si is formed on the region 103 to obtain a photoconductive material 100 having the laminated amorphous material layer 102. A Ge distribution in the region 103 is formed so as to be rich on the side of the substrate 101, poor on the surface side of the material 100, nonuniform in the layer thickness direction, and uniform in a plane parallel to the substrate surface. At least one of the regions 103, 104 contains H or halogen. The photoconductive material thus obtained has high photo-sensitivity to the range of the visible and IR regions and superior durability, etc.
Patent JP-S5983658-A (JP)
Title: Printing method
Inventor: TSUKAMOTO KATSUHIDE
IPC: B41M1/12
Filed: 1982-11-04
Abstract: PURPOSE:To perform printing with high printing quality by melting ink and to enable full color printing, by a method wherein the light impervious film of a mask is perforated by electric discharge to be superposed to an ink sheet and the whole is further superposed to an object to be printed to be irradiated with heat rays. CONSTITUTION:A current is supplied to a mask 1 or the mask 1 is discharged according to an electric signal to form perforations 3a to the light impervious film 3 of said mask 1 and the side of the light impervious film of the mask 1 is subsequently superposed to the side of the substrate 7 of an ink sheet 6 and the surface of the heat meltable ink 8 of the ink sheet 6 is further superposed to an object 9 to be printed. In the next step, when the mask is irradiated with heat rays 10 from above, the heat rays 10 passing through the perforations 3a of the light impervious film 3 are passed through the substrate 7 of the ink sheet 6 to reach the heat meltable ink 8. The parts 8a of the heat meltable ink 8 corresponding to the perforations 3a of the light impervious film 3 are melted by heat rays 10 and adhered on the object 9 to be printed. Finally, if the ink sheet 6 is peeled off from the object 9 to be printed, the melted parts 8a remain on the object to be printed to finish printed matter.
Patent JP-H1041427-A (JP)
Title: Semiconductor device and its manufacture
Inventor: OBARA YOSHIKAZU
IPC: H01L23/12
Filed: 1996-07-24
Abstract: PROBLEM TO BE SOLVED: To suppress package deformation to reduce the defetive package of a semiconductor by a method wherein a rigid and flat frame part is integrally junctioned with a wiring pattern layer immediately above the frame part for sustaining the flatness of an outer connecting terminal, while resin-sealing the aperture part of the frame part for integrating the frame part with the wiring pattern layer. SOLUTION: The wiring layer 1 is formed of the first insulating member layer 6, a metallic wiring pattern layer 8 and the second insulating member layer 7. A frame part 3 is attached to the region immediately above the outer connecting region 11 on the first insulating member layer 6 side of the wiring layer 1. Besides, the rigid and flat frame part 3 is integrally junctioned with the region immediately above the wiring layer 1 for maintaining the flatness of the junction region of the outer connecting terminal 10. On the other hand, the aperture part of the frame part 3 is resin-sealed so as to form a resin sealed part 5 in the cavity part of a package on the wiring layer 1 including a semiconductor chip 2 and wires 4. Through these procedures, the frame part 3 and the resin sealed part 5 are integrated thereby enabling the package deformation to be suppressed.
Patent JP-H0645365-A (JP)
Title: Semiconductor device and its manufacture
Inventor: HASHIMOTO MASAAKI
IPC: H01L21/306
Filed: 1992-07-22
Abstract: PURPOSE:To reduce dispersion by implanting ion to a part excepting a part corresponding to a lower step recess part and by forming a one step recess T-type structure wherein impurity concentration of an operational layer is raised. CONSTITUTION:An operational layer 2 which is doped with Si is formed on an upper surface part of a GaAs substrate 1 and an ion implantation layer 3 is formed from a surface of the operational layer 2 excepting a gate part 4 of a width of Wg. A source electrode 11 and a drain electrode 12 are applied and formed in a surface of the ion implantation layer 3. A recess part 8 which has a wide width W and a uniform depth and is shallower than a depth of the ion implantation layer 3 is formed in a specified position of the operational layer 2 including the gate part 4 between the source electrode 11 and the drain electrode 12. In the recess part, a surface thereof is made the ion implantation layer 3 ranging over a width Wgs from a source side to a gate part to a width Wgd from a drain side to the gate part. Since only one recess process is required according to this constitution, the title device can be manufactured with good uniformity.
Patent JP-S6439684-A (JP)
Title: Continuous reproducing device
Inventor: HARANAGA SATOSHI
IPC: G11B27/10
Filed: 1987-08-05
Abstract: PURPOSE:To remarkably shorten the rewinding time of a tape in which only sound are recorded on plural tracks at the time of continuous reproduction, by providing a tape counter value storage means and a control means which performs reproduction from a recording value on a track nearest to a start position out of counter values. CONSTITUTION:A control circuit 1 consisting of a microcomputer, etc., in a VTR of 8mm decides whether or not it is the continuous reproduction in a reproduction mode, whether or not it is the end of the tape by a tape counter circuit 2, and whether or not it is inter-music by an inter-music detection circuit 3, and a count value from the circuit 2, that is, a tape count position at the time of completing one preceding music is stored in a track storing area. Similarly, such control is applied that the music nearest to the start position is selected and the reproduction is started after the count positions of the start and the end of music extending over all tracks are stored. Therefore, the continuous reproduction can be performed by performing a long time of rewinding only when the music is moved from the music at the end to the one at the start position and without performing the movement of a track.
Patent JP-H1137370-A (JP)
Title: Pipe joint
Inventor: DOI TAKAHIRO
IPC: F16L37/22
Filed: 1997-07-18
Abstract: PROBLEM TO BE SOLVED: To automatically lock a sleeve for operating an advanced locking element, and to improve the workability. SOLUTION: In a pipe joint, a socket 1 and a plug 2 are connected by a locking element 7 by operating a sleeve 10 which inhibits the movement in a centrifugal direction, of the locking element 7 when it is advanced, and releases the inhibition when it is retreated. A stopper 21 obtained by projecting the locking part 20 from an outer periphery of an elastic body 19 which has a C-shaped structure and of which a diameter can be enlarged and reduced, is fitted into a circular groove 18 formed on an outer periphery of a socket body 2 in such manner that the diameter can be enlarged and reduced. In the stopper, the diameter is enlarged by the elastic force when the sleeve 10 is located on the advance position, to lock a rear edge of the sleeve 10 which is going to be retreated, and the diameter of the stopper is reduced against the elastic force when the sleeve 10 is retreated.  Whereby the stopper 21 is accommodated inside of the retreated sleeve 10, further an engagement groove 31 is formed with which the stopper 21 is to be engaged when it is accommodated inside of the sleeve 10 when the sleeve 10 is located on the retreat position, and the rear edge side of the engagement groove 31 has a taper face 32 of which a diameter is enlarged toward the point edge side.
Patent JP-H03128696-A (JP)
Title: Current detection circuit
Inventor: HATTORI MASAYUKI
IPC: H02P7/288
Filed: 1990-07-23
Abstract: PURPOSE:To detect currents by low power consumption by connecting four small-sized MOSFETs between a power terminal and an output terminal to four MOSFETs forming an output buffer by an H bridge and shaping the H bridge. CONSTITUTION:The output buffer of an H bridge is formed by four MOSFETs 5-8 connected between a power terminal 3 and a ground terminal 4, and the gates of the FETs 5 and 8 are energized from the internal input terminal 12 of a control circuit 11 and the gates of the FETs 6 and 7 from an external input terminal 13. Output terminals are shaped by the node 9 of the MOSFETs 5 and 6 and the node 10 of the MOSFETs 7 and 8. The power terminal 3 and the output terminals 9, 10 are connected by four small-sized MOSFETs 15-18 and an H bridge is formed, and the current detecting terminal 14 of the control circuit 11 and the node of the FETs 15, 16 and the node of the FETs 17, 18 are bonded, thus constituting a current detection circuit. Accordingly, the current detection circuit having low power consumption is organized.
Patent JP-S6258811-A (JP)
Inventor: NAKABASAMI TOSHIAKI
IPC: H02G1/14
Filed: 1985-09-03
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。
Patent JP-2000030292-A (JP)
Title: Evaluation base for optical pickup
Inventor: SUZUKI SHIGEHIKO
IPC: G01D5/30
Filed: 1998-07-09
Abstract: PROBLEM TO BE SOLVED: To dispense with the confirming and the adjusting of accuracy concerning the running position of an optical pickup by fixing a disk or the like, its rotary shaft and a main spindle and a subspindle running the optical pickup to the reference block installed on a base, while assuring the accuracy of the running position of the optical pickup with respect to the optical disk or the like. SOLUTION: A turntable 22 rotating an optical disk 5 while fixing it, its rotary shaft and corner part positioning a main spindle 4a and a subspindle or the like are precisely machined in addition to the main body of a reference block 2. Since the optical disk 5 and an optical pickup are mounted on the reference block 2, having such a high dimensional accuracy and the optical pick up, is made to run while the running position of the pickup is positioned with high accuracy with respect to the rotating optical disk 5, at evaluating alignments and operations of optical system components and electrical signal system components of the pickup, an error caused by the faults of an evaluation is caused by the components can be avoided.
Patent JP-H08106200-A (JP)
Title: Electrostatic charging device and image forming device
Inventor: ISHIYAMA HARUMI
IPC: G03G9/08
Filed: 1995-07-31
Abstract: PURPOSE: To realize uniform electrostatic charging without causing the leakage of an image and defective electrostatic charging even when a pin hole is formed on a body to be electrostatically charged. CONSTITUTION: An electrostatic charging member 2 is arranged so as to be faced to the electrostatic charge surface 1a of a photoreceptor 1. The electrostatic charging member 2 is constituted of an electrode sleeve 21, a magnet 22 and a magnetic brush 23. Then, the brush 23 is brought into contact with the surface 1a. Besides, the resistance value of a magnetic grain 23 is set within the range of 1×10<4> to 1×10<7> Ω in the case of the impressing voltage 1 to 1000V.
Patent JP-S6439636-A (JP)
Title: Optical pickup device
Inventor: MAEI SHIGEKI
IPC: G02B7/28
Filed: 1987-08-04
Abstract: PURPOSE:To suppress the generation of a tracking offsetting by constituting a diffraction grating between a light source and an objective lens of an area to divide an optical beam from the light source into three spots and an area to divide a return light into two spots. CONSTITUTION:A diffraction grating 4 is composed of a diffraction grating 4a to divide and irradiate a light emitted from a laser diode 5 into three spots and diffraction gratings 4b and 4c to divide a return light reflected by a recording surface T further into two spots and guide it to a light detector 6. The return light divided to three spots with the diffraction grating 4a and reflected by the recording surface T is divided into six diffracted lights Lb1-Lb3 and Lc1-Lc3 and guided to a detector 6. On the other hand, the detector 6 is composed of six light-receivers 6a-6f. The output signal of the light-receivers 6a-6f is converted to the highly accurate tracking error signal and when the signal is used for the tracking control, the generation of the off-setting can be suppressed.
Patent JP-H04254498-A (JP)
Title: Single crystal material having composition containing ktiopo4 and electric optical device containing same
Inventor: JIERARUDO BURAMU
IPC: C30B29/14
Filed: 1991-07-10
Abstract: PURPOSE: To provide the single crystal material with composition of a dope KTiOPO 4  having a comparatively low conductivity and the electro-optic device containing the material.  
     CONSTITUTION: Ti is partially replaced with one or more than two kinds of doped agent ions whose valence is +3, +2 or +1 and whose ion radius is within 50% of Ti ion radius, and the concentration of the doped agent ions of one or two kinds or over in the material is selected so as to attain the material conductivity nearly equal to 2×10 -8  S/cm or more. 
     COPYRIGHT: (C)1992,JPO
Patent JP-H0861979-A (JP)
Title: Eccentric error correcting device of rotary encoder
Inventor: KAWADA SHINYA
IPC: G01D5/36
Filed: 1994-08-19
Abstract: PURPOSE: To correct the eccentric error of a high-degree rotating oscillation (multicycle/rotation), and to realize a highly accurate rotating angle detection of shaft, by providing position identifiers, pickups to generate position detecting signals, and an eccentric error correcting device. CONSTITUTION: Three pickups 3-1 to 3-3 are provided. Projections 2a, 2b... being position identifiers provided on the circumference of a rotary disk 1 are provided at the same intervals. When the center of the disk c and the center of the rotation c' are coincident with each other, the system is composed to generate pickup output pulses 20 (21 to 23) of the same phase constantly from the pickups 3-1 to 3-1. An eccentric error correcting device 6 generates a pulse (a mean pulse output) 30 delaying a specific delay time T from the mean timing of the pickup pulses 21 to 23 (the true pulse position) with slipped phases resulting from the discrepancy of the disk center (c) and the rotating center (c'), and it is made as a rotary encoding output instead of the true pulse.
Patent JP-H0480914-A (JP)
Title: Semiconductor manufacturing method
Inventor: CHIYOU KOUYUU
IPC: H01L21/26
Filed: 1990-07-24
Abstract: PURPOSE:To make it possible to solve the problem of shrinkage of a glass substrate by a method wherein the non-single crystal semiconductor, which is obtained by a vapor-phase chemical reaction method and the like, is thermally recrystallized. CONSTITUTION:A glass substrate 1 is formed by AN-2 non-alkali glass of Asahi Glass Manufacturing Company, and the distrotion point of the glass is 616 deg.C. First, a heat treatment is conducted on the glass substrate at 610 deg.C for twelve hours. This heat treatment is conducted in an inert gas atmosphere of atmospheric pressure using an electric furnace. Then, after an SiO2 film 2 of 200nm in thickness has been formed using a sputtering method an a-Si film 3 of 100nm in thickness is deposited thereon using a PCVD method, and the a-Si film is thermally recrystallized at 600 deg.C for ninety-six hours. This thermal recrystallization is conducted in an inert gas atmosphere of atmospheric pressure using an electron furnace. When the film is heated up for ninety-six hours, the shrinkage of the non-heat treated AN-2 non-alkali glass is about 2000ppm, whereas the shrinkage of the heat-treated AN-2 non-alkali glass is about 500ppm, and the shrinkage of the glass substrate can be minimized.
Patent JP-H0358717-A (JP)
Title: Method for forming mycorrhiza of mycorrhiza fungus
Inventor: NAKAI TAKAO
IPC: A01G1/04
Filed: 1989-07-27
Abstract: PURPOSE:To artificially culture a mycorrhiza mushroom by grafting a root having formed mycorrhiza to a root of parasitic plant and infecting the root of a host plant such as pine, konara oak or red oak with mycorrhizal fungus of Tricholoma Matsutake Sing, Lyophyllum aggregatum, etc. CONSTITUTION:When mycorrhiza fungus of mycorrhizal mushroom such as Tricholoma Matsutake Sing or Lyophyllum aggregatum infects a root of parasitic plant such as pine, konara oak or red oak, a root having formed mycorrhiza is grafted to the root of parasitic plant.