baber/WOPTO huggingface dataset:
Patent JP-S6359516-A (JP)
Title: Method for forming resin layer on rotor surface
Inventor: KOHAMA TADAHIKO
IPC: B29L31/32
Filed: 1986-08-29
Abstract: PURPOSE:To reduce the baking time and make it possible to perform the baking treatment which does not generate the surface deformation by a method wherein a cost of fluoroplastic or liquid crystal resin, which is molded onto the surface of an aluminum alloy rotor by injection, is heated by high frequency currents through a press jig. CONSTITUTION:Fluoroplastic 3 with a thickness of about 0.5mm is molded on the periphery of a aluminum alloy cast rotor 2 by injection. IN order to fill up a gap 6 produced between the surface of the aluminum alloy rotor 2 and the fluoroplastic 3, the rotor is shifted through a press jig 7 consisting of asbestos in the direction indicated with the arrow so as to generate heat 9 locally and in the small range on the surface of the rotor by means of a high frequency coil 8 in order to fill up the gap 6 by melting a part 10 of the resin 10. Because the resin layer is heated by high frequency currents through the press jig 7, neither 'blister' nor 'scaling' develops in the resin layer, and the rotor and the resin layer completely adhere to each other. In addition, the aluminum alloy rotor is in the form inserted in the resin layer, and both the end parts 3a of the rotor do not become dull but make sharp corners, resulting in developing no leakage at the pressure feeding of air.
Patent JP-H0742926-A (JP)
Title: Noncombustible material separating device in fluidized bed type incinerator
Inventor: KOMIYAMA MASARU
IPC: F23G5/30
Filed: 1993-07-28
Abstract: PURPOSE:To provide a noncombustible material separating device in which some long-sized noncombustible materials are not hooked at a sieve member and the noncombustible materials are not accompanied in fluid medium. CONSTITUTION:A noncombustible material separating device in a fluidized bed type incinerator in which fluid medium containing some noncombustible materials taken out of a bottom part of a fluidized bed type incinerator is separated into noncombustible material 9 and fluid medium 8 is constructed such that a casing is installed in a discharging passage for taking out the fluid medium 8 containing noncombustible material 9, a screw conveyor and a cylindrical sieve 3 coaxially connected to and rotated with the screw conveyor are installed within the casing and both ends of a shaft of the screw conveyor are supported outside the casing by a bearing, respectively. A discharging port 4 for discharging the fluid medium 8 is arranged below the sieve 3. A discharging port 6 for discharging noncombustible material 9 is arranged below the opening of the sieve 3 and the same time a sieve hole at an outer surface of the sieve 3 is provided with a cylindrical nozzle 2 having a length more than two times of a diameter corresponding to an area of each of the holes and then a cover 7 is installed at an outer surface of the nozzle 2 of the sieve 3.
Patent JP-H0525477-A (JP)
Title: Projection cathode ray tube and projection television set
Inventor: MORITA YASUKAZU
IPC: H01J29/20
Filed: 1991-07-22
Abstract: PURPOSE:To provide a projection cathode ray tube for a picture which is densely red and is wide in the range of color reproduction though it contains a fluorescent film PH comprising an Y2O3:Eu stimulable phosphor. CONSTITUTION:An Y2O3:Eu stimulable phosphor having an activator Eu concentration in the range of 7-12mol% is used as a fluorescent film PH or a phosphor prepared by adding 0.1-0.5wt.% pigment to an Y2O3:Eu stimulable phosphor containing an activator Eu in a concentration in the range of 7-10mol% is used as a fluorescent film PH so that the chromaticity value of the red fluorescent color in the CIE chromaticity coordinates may fall in the ranges of x>=0.645 and y<=0.348.
Patent JP-2000036513-A (JP)
Title: Spool wound with bonding wire for semiconductor and method for supplying spool and bonding wire for semiconductor
Inventor: IDE KENZO
IPC: H01L21/60
Filed: 1998-07-21
Abstract: PROBLEM TO BE SOLVED: To provide a spool around which a bonding wire for a semiconductor is wound for removing only the winding start end part of the bonding wire in length necessary for grounding, without slackening the wire even when a terminal tape is removed in grounding a lead wire. SOLUTION: In this spool 1, a bonding wire 3 for a semiconductor whose winding is starting is wound around a spool 2 in which flanges 2a and 2b are mounted on the both ends of a spool main body 2, so as to be rewindable to one edge of the flange 2b. In this case, this spool 1 is provided with a first fixing means 4 for fixing the end part of the rewindable bonding wire 3 for a semiconductor to the flange 2b, and a second fixing means 5 for fixing the middle part of the rewindable bonding wire 3 for a semiconductor in prescribed length from the first fixing means 4 to the flange 2b.
Patent JP-H11109517-A (JP)
Title: Film slide mounting system and production of film slide
Inventor: PATTON DAVID LYNN
IPC: G03D15/10
Filed: 1998-07-21
Abstract: PROBLEM TO BE SOLVED: To automatically mount a film piece in an appropriate direction for an formed image by rapidly and accurately detecting the direction of the film piece. SOLUTION: A magnetic reading means 30 reads information in the magnetic area of film and transmits it to a logic and control computer 16 through an input bus 32. After detecting the direction of the film, the film piece 44 cut by a knife assembly 36 is carried by a 1st driving assembly 46 so that it may be arranged and held at a 1st position on a table 48. The table 48 is rotatably attached on a supporting body 50 connected to a motor responding to a control signal from the computer 16 so that it may rotate around a center shaft 54. By using the film piece 44 held at any one of the 1st to the 3rd positions on the table 48, the computer 16 roughly estimates the direction of the film piece 44 before advancing the film piece 44 so as to mount it on a usable slide mount 58.
Patent JP-S6361500-A (JP)
Title: Semiconductor memory device and its driving method
Inventor: YOSHIDA MASAAKI
IPC: G11C11/34
Filed: 1986-08-29
Abstract: PURPOSE:To suppress the increase of a cycle time due to the addition of an error correction circuit by sequentially controlling the reading and writing a two port memory cell through a first address buffer and a second address buffer making this output as an input or the like. CONSTITUTION:The first and the second ports of a memory matrix are sequentially selected and make access through the row address buffer 11A, the row address buffer 11B making this output as the input and corresponding row selection driving circuit 12A, 12B, respectively. This is also applied to a column direction. After a reading is carried out through the first port, a writing is carried out through the second port to complete the memory cycle. Accordingly, the reading of the next memory cycle an be executed without the competition in parallel to the writing of a preceding cycle and a writing period is masked by the reading period of the next cycle time due to the addition of the error correction circuit can be suppressed.
Patent JP-H1154117-A (JP)
Title: Lithium secondary battery
Inventor: KOBAYASHI AYAKO
IPC: H01M10/052
Filed: 1997-07-30
Abstract: PROBLEM TO BE SOLVED: To provide a 1.5 V class secondary battery excellent in a charge and discharge cycle characteristic and an overcharge characteristic by providing a positive electrode using Li-V composite oxide having a spinel type structure as a positive electrode active material, a negative electrode using Li-Bi alloy as a negative electrode active material and a nonaqueous electrolyte. SOLUTION: Li-V composite oxide having a spinel type structure is shown by LiV2 O4 . To put it concretely, the one having a positive spinel type structure that O atoms are cubically and most densely filled in its unit lattice and V is filled in a condition of being surrounded by six O atoms in an octahedral shape between O atoms and Li is filled in a condition of being surrounded by four O atoms in a tetrahedral shape, is used. When Li-Bi alloy is used as a negative electrode active material, even at charge/discharge time, growth of a tree branch-shaped projection is restrained, and a charge/discharge cycle characteristic is improved, and a nonaqueous electrolyte hardly decomposes at overcharge time, and an increase in battery internal pressure by generation of gas is restrained.
Patent JP-S6183053-A (JP)
Title: Preparation of thermal head
Inventor: SAWAE TETSUNORI
IPC: B41J2/35
Filed: 1984-09-28
Abstract: PURPOSE:To reduce the irregularity in the resistance value of the heat generating element of a thick film type thermal head, by reducing the resistance value by applying a voltage pulse to the heat generating resistor. CONSTITUTION:At first, the resistance value of each heat generating resistor is measured to be compared with an objective resistance value R0 and a voltage pulse is applied to a heat generating resistor having a resistance value larger than R0. A voltage pulse, wherein the initial setting of a peak value is V0, is applied at first to reduce the resistance value. The resistance value after reduction is measured and, if said value is equal to or more than R0, a voltage pulse with a pea value of V0+DELTAV is applied. Thereafter, the resistance value is measured and, if said value equal to or more than R0, a voltage pulse with a peak value of V0+2DELTAV is applied. As mentioned above, the peak value of the apply voltage pulse is gradually adjustment is stopped when the resistance value reaches R0 or less. By putting the resistance value in a definite range of R0 or less, the irregularity in the resistance value is reduced.
Patent JP-H0547696-A (JP)
Title: End station for ion implantation device
Inventor: SAKAMOTO ISAMU
IPC: C23C14/48
Filed: 1991-08-15
Abstract: PURPOSE:To drive a wafer holding disk with small power and efficiently and besides, prevent the occurrence of the leak resulting from the driving of the wafer holding disk. CONSTITUTION:A wafer holding disk 1 is constituted rotatably by coupling the wafer holding disk 1 with a rotary shaft 2. Moreover, a circular member 4 on fixing side is provided in the condition that it has surrounded the wafer holding disk 1. A plurality of primary conductors 5 for a motor are provided at equal intervals at the face opposed to the wafer holding face of the member 4 on fixing side, and a plurality of secondary magnets 6 for a motor are provided at equal intervals on the periphery of the wafer holding disk 1, and the wafer holding disk 1 is made to act as a motor rotor.
Patent JP-S6266673-A (JP)
Title: Manufacture of semiconductor device
Inventor: KITAGUCHI HIROHISA
IPC: H01L29/78
Filed: 1985-09-19
Abstract: PURPOSE:To improve the withstand voltage of the drain of an MOSFET without complicating forming steps by etching the surface of a substrate before forming a gate insulating film to form a low impurity density layer near the gate of a drain. CONSTITUTION:Before forming an MOSFET semiconductor device by forming a gate insulating film 41 of an oxide film, the drain region of a substrate or an epitaxial layer 31 is removed by etching together with source drain diffused region 34. A low impurity density layer 34a is formed near the gate of a drain in simple steps without necessity of offsetting the gate and the drain to achieve an ion implantation including complicated steps containing the mask matching for forming a pattern and the formation of lower density drain layer to improve the withstand voltage of the drain of the MOSFET.
Patent JP-2000041385-A (JP)
Title: Motion element
Inventor: KOHAMA YASUAKI
IPC: H02N10/00
Filed: 1998-07-21
Abstract: PROBLEM TO BE SOLVED: To reduce energy consumption, to generate large force, to improve reaction speed and to miniaturize a motion element in the motion element converting energy into actual physical quantities such as displacement, speed and force. SOLUTION: A motion member 1 formed of shape memory alloy which shows shapes different at high temperature and low temperature, and a thermionic element 3 which is installed on the face of the motion member 1 and heats or cools the motion member 1 by using Peltier effect, are installed. The motion member 1 is heated or cooled and is deformed by making current flow into the thermionic element 2 in one direction or an opposite direction. Then, motion force is generated by the deformation of the member. Thus, a motion element 6, in which energy consumption is less, large force can be generated, reaction speed is fast and which can be miniaturized, can be realized.
Patent JP-H0869990-A (JP)
Title: Cleaning method for semiconductor silicon wafer
Inventor: NAKANO MASAMI
IPC: H01L21/306
Filed: 1994-08-30
Abstract: PURPOSE: To obtain a method for cleaning a semiconductor silicon wafer in which adhesion of microparticles to the surface of the semiconductor silicon wafer can be suppressed effectively and sufficiently. CONSTITUTION: In the method for cleaning a semiconductor silicon wafer using aqueous solution of hydrofluoric acid and then cleaning the semiconductor silicon wafer using pure water, a surfactant is added to the aqueous solution of hydrofluoric acid and ozone is added to the pure water.
Patent JP-2000039396-A (JP)
Title: Method and apparatus for measuring internal information of scattering absorbent
Inventor: TSUCHIYA YUTAKA
IPC: G01N21/49
Filed: 1998-07-21
Abstract: PROBLEM TO BE SOLVED: To simply and accurately determine a transport scattering coefficient μs' and an absorption coefficient μa of a scattering absorbent by measuring an impulse response by using a pulse light having an arbitrary wavelength and using a mean optical path length calculated from its time division wavelength, its variance, distortion factor and the like. SOLUTION: A pulse light generated from a light source 5 is wavelength selected to a predetermined wavelength by a wavelength selector 4, and are made incident from a position 7 through an optical guide 3 into a scattering absorbent 1. The light propagated while scattering in the absorbent 1 is guided from a position V to a photodetector 7 via an optical guide 6, and a reception signal is converted into a photodetection signal. Then, a signal processor 8 connected to the photodetector 7 and the source 5 acquires waveform data indicating a time change of a detected light intensity based on the signal. Further, a processor 9 calculates a mean optical path length of a plurality of photons for constituting the detected light and a variance based on the data.  A transport scattering coefficient μs' and an absorption coefficient μa are determined based on the mean optical path length and the variance.
Patent JP-H1135887-A (JP)
Title: Coating liquid for forming fouling removing film and photocatalyst-supporting substrate produced by using the same
Inventor: NAGATA MAKOTO
IPC: C09D183/16
Filed: 1997-07-16
Abstract: PROBLEM TO BE SOLVED: To industrially and advantageously obtain the subject substrate useful for soundproofing walls of roads, telephone booths, etc., by coating the surface of a substrate with a solution containing fine semiconductor particles having photocatalyst actions and polysilazanes and then curing the formed coating film. SOLUTION: This substrate is obtained by mixing an organic solvent such as preferably m-xylene with a dispersing agent in an amount of 5-50 wt.% based on the weight of photocatalytic fine particles (preferably titanium oxide), mixing the resultant mixture with the photocatalytic fine particles, preparing a fine particle dispersion, then mixing the resultant dispersion with a solution of polysilazanes (a polysilazane adduct to a silicon alkoxide, etc.), suitably diluted with m-xylene, etc., and having 100-50,000, preferably 300-5,000 number- average molecular weight, preparing a solution, dipping a prewashed substrate (a metal, ceramics, a plastic, etc.), in the resultant solution or coating the substrate with the solution by brushing, etc., and drying the formed coating film at a temp. of 80-120 deg.C for 10-60 min.
Patent JP-H03210737-A (JP)
Title: Electron gun structural body for cathode-ray tube
Inventor: NAIKI KAZUAKI
IPC: H01J29/50
Filed: 1990-08-02
Abstract: PURPOSE:To obtain an electrode structural body having a good withstand voltage by making the axial lengths of two closed cylindrical electrodes, which form a united pair of first and second electrodes near a cathode, longer on the side near the cathode than on the other side. CONSTITUTION:The distance B1 between electrode supports 18 for a G4 electrode 24, which is nearest a cathode 10 and to which a high anode voltage is applied, and for a G3 electrode 23, which is set on the opposite to the electrode 24 in the cathode 10 side, is so determined as to become larger than the distance between supports 18 in the case of dividing the closed cylindrical electrodes equally. Consequently, the shortest leakage current route which is formed between the electrode supports along an insulator supporting rod 19 becomes large as well and become enough length for withstand voltage between the electrodes 23 and 24. During the withstand voltage treatment in manufacturing process, danger of excess leakage current owing to dielectric breakdown between electrodes running into a cathode becomes low and thus the treatment voltage can be set high and withstand voltage property between electrodes where high potential difference is caused becomes good. Mutual distance B2, B3 between supports for G4 electrode 24 and G5 electrode 25, and the electrode 25 and G6 electrode is also made large.
Patent JP-S58131478-A (JP)
Title: Gas appliance with solenoid valve and pressure governor
Inventor: KAARU DOUNGUSU
IPC: G05D16/06
Filed: 1982-11-25
Abstract: 1. Gas fitting with a magnetic valve and a pressure regulator which comprise a common valve body (6, 7) co-operating with a valve seat (4, 5) and engaged from one side by the regulator drive (15, 23) and from the other side by the magnet armature (12) having the identically opposite direction of action so that when the magnetic valve is not energised, the valve body (6, 7) is maintained in the closed position while when it is energised, the valve body (6, 7) is free to be actuated by the regulator drive (15, 23) which comprises a diaphragm (15) which is subject to the pressure of the gas to be regulated and also a regulating spring (23) counteracting the positioning force of the diaphragm (15), characterised in that the magnet armature (12) is of hollow construction, the regulating spring (23) engaging the valve body (6, 7) through the hollow armature.
Patent JP-S5994843-A (JP)
Title: Manufacture of semiconductor device
Inventor: TANAKA TAKESHI
IPC: H01L21/316
Filed: 1982-11-24
Abstract: PURPOSE:To eliminate a pattern conversion difference and to minimize the width of a separated oxide film down o the limit of the photoetching process by a method wherein the expansion in the lateral direction of a separated oxide film is compensated by the width of the second film remaining on the first film pattern sides. CONSTITUTION:A thermal oxide film 12, a multiple silicon layer 3, a silicon nitride film 14 and the first multiple crystal film 15 are formed on a silicon substrate 11 and after patterning, the second multiple crystal silicon film 16 is deposited. Residual multiple crystal silicon films 16' are formed by etching only on the sides of patterns 15' to form silicon nitride patterns 14' by etching process. Then the patterns 14' are selectively oxidized to form a separated oxide film 17. Through these procedures, the width of the separated oxide film 17 may be made around 1.5mum almost similar to the distance of 1.5mum between the multiple crystal silicon patterns 15' as the limit of photoetching process making the pattern conversion difference zero.
Patent JP-H0545427-A (JP)
Title: Apparatus for detecting remaining amount of electric power
Inventor: MORITA TAKESHI
IPC: G01R31/36
Filed: 1991-08-16
Abstract: PURPOSE:To detect the remaining amount of electric power of a battery or the like accurately and efficiently with regard to an apparatus for detecting the remaining amount of electric power. CONSTITUTION:A set-state detecting part 1 for outputting the signals corresponding of the loading and the non-loading of a battery 2 into an apparatus to be used and a switching part 3 for selectively connecting a terminal-voltage measuring load 4 to the battery are provided. A processor 5 for performing the following functions is provided. When a loading signal (a) from the set-state detecting part 1 is received, at first, the terminal voltage (b) under the state wherein the load 4 is not connected to the battery is obtained. The terminal voltage is compared with the first reference voltage. When the terminal voltage is smaller, a switching part 3 is operated, and the load 4 is connected to the battery 2. The terminal voltage of the battery under this state is obtained. The terminal voltage is compared with the second reference voltage, which is smaller than the first reference voltage. When the terminal voltage is smaller, it is judged that as 'unusable' with the processor. The remaining amount of the electric power is investigated at the stage wherein the battery is set in an apparatus to be used.
Patent JP-S60100620-A (JP)
Title: Manufacture of unnormalized, high strength and fatigue resistant steel member
Inventor: TAKAYAMA TERUO
IPC: C21D8/00
Filed: 1983-11-04
Abstract: PURPOSE:To manufacture inexpensively a high strength and fatigue resistant steel member using an unnormalized steel blank by transforming the austenitic structure of a steel contg. specified amounts of C, Si, Mn, V, Al, N and Cr into a ferritic structure and by precipitating fine V carbonitride during the transformation. CONSTITUTION:The composition of a steel is composed of, weight, 0.3-0.5% C, 0.15-0.6% Si, 0.5-3% Mn, 0.05-0.3% V, 0.02-0.06% Al, 0.01-0.03% N, <0.5% Cr and the balance Fe. The steel is hot worked to a desired cross-sectional shape at 900-1,250 deg.C, reheated to 900-1,250 deg.C as required, and air-cooled to 500 deg.C at >=0.2 deg.C/sec cooling rate.
Patent JP-S60155629-A (JP)
Title: Collection of metal valuable contents from material containing copper or noble metals
Inventor: SUBUEN OOKE HORUMUSUTOREMU
IPC: C22B15/00
Filed: 1984-10-01
Abstract: The invention relates to an improvement in a method for recovering metal values from copper-containing and/or precious-metal containing materials which also contain antimony and/or bismuth in such high quantities as to render working-up of the materials with conventional metallurgical processes difficult or impossible. In accordance with the improvement, the material is subjected to a chlorination volatilization process in a manner to bring the antimony and/or bismuth content of the material to a predetermined low level acceptable for the continued working-up of the material in conventional process stages, while maintaining the metal values of the material in a substantially unaffected form. The volatilization process is best carried out at temperatures of between 450° C and 750° C, preferably between 550° C and 650° C.The chlorination process can be carried out on materials included in the group: sulphidic or oxidic-ore concentrates, matte, speiss, oxidic and metallic intermediate products. In certain cases it is convenient to convert the material to another form within the group, for example the matte, prior to carrying out the chlorination process.