baber/WOPTO huggingface dataset:
Patent TW-558592-B (TW)
Title: Combined cycle power plant
Inventor: OHFUJI CHIKAKO
IPC: F01D17/00
Filed: 2001-11-15
Granted: 2003-10-21
Abstract: Disclosed is a combined cycle power plant, which, in modifying an existing steam turbine power plant, ensures the same output power as that provided by the original machine facility before the modification is done, attempting to enhance substantially high efficiency with the existing combustion type boiler and steam turbine operable independently. The combined cycle power plant generally comprises a gas turbine power facility 33, a heat recovery steam generator 37 into which exhaust gas from the gas turbine power facility is led, a steam turbine power facility 23 installed on another axle separate from the gas turbine power facility 33, and a combustion type boiler that supplies steam to the steam turbine power facility. The power generation plant further comprises a system for introducing steam, which is generated in the heat recovery steam generator and the combustion type boiler, to the steam turbine through steam lines 64, 65, 66, 67, which respectively extend from each boiler and are then joined together, and a system that is formed by branching a downstream pipe of a condenser mounted to the steam turbine power facility and supplying condensed water condensed by the condenser into the heat recovery steam generator and the combustion type boiler.
Patent TW-I231958-B (TW)
Title: Method for determining an endpoint and semiconductor wafer
Inventor: HAGGART DAVID
IPC: B24B49/02
Filed: 2001-11-23
Granted: 2005-05-01
Abstract: A method for determining an endpoint during chemical-mechanical polishing of a semiconductor wafer (100, 200) is disclosed. The method comprises the steps of depositing on a first layer (106, 206) to be polished a second (sacrificial) layer (108, 208), the physical properties of the first layer (106, 206) being different from the physical properties of the second layer (108, 208). After that, the wafer (100, 200) is polished by chemical-mechanical polishing. Due to the different physical properties of the layers, a variation of the physical properties can be detected, and an endpoint can be determined on the basis of the detected variation. Further, a semiconductor wafer for use in a chemical-mechanical polishing process is disclosed.
Patent TW-530227-B (TW)
Title: System and method for third party logging server
Inventor: DUTTA RABINDRANATH
IPC: G06Q30/06
Filed: 2001-11-27
Granted: 2003-05-01
Abstract: A system and method for a third party logging server to keep track of sales by online merchants of copyrighted works. Providers of copyrighted works, such as publishers and authors, register with the third party logging server and acquire an authentication mechanism to use the server, such as a username and password. The providers upload digital works and royalties corresponding to the works to the third party logging proxy server. Online merchants register with the third party logging proxy server and also acquire an authentication mechanism to use the server. The merchant downloads works and royalty rates to the merchant's computer for online sales. The merchant also downloads software that informs the third party logging proxy server whenever the merchant makes a sale. The server keeps track of the sale. The server collects royalty payments from merchants. The server also calculates and sends providers their royalty payments.
Patent TW-578244-B (TW)
Title: Underball metallurgy layer and chip structure having bump
Inventor: TONG HO-MING
IPC: H01L23/485
Filed: 2002-03-01
Granted: 2004-03-01
Abstract: An underball metallurgy (UBM) layer is disclosed, which is suitable to be allocated on a contact, the composition material of the surface on which the contact touches with the UBM comprises copper, wherein the UBM comprises an adhesion layer, a barrier layer and a wettable layer. The adhesion layer is located at the contact, the material of the adhesion layer can be Ti-W alloy or Cr. The barrier layer is located at the adhesion layer, the material of barrier layer can be Ni-V alloy. The material of wettable layer can be copper, palladium or gold.
Patent TW-I241120-B (TW)
Title: Method for manufacturing sensor frame for image sensor
Inventor: MATSUMOTO TOSHIO
IPC: H04N1/028
Filed: 2002-05-22
Granted: 2005-10-01
Abstract: A sensor frame for an image sensor is manufactured in the step of forming a sensor frame for an image sensor by extrusion molding so that a frame support portion for supporting the frame is formed above a lens array holding portion, and the step of removing the thus-formed sensor frame support portion by machining while leaving parts of the support portion located at the longitudinally corresponding to the upper ends of the lens array holding portion. Accordingly, machined surfaces subjected to the machining exist outside the hollow space where the sensor ICs are located.
Patent TW-I228902-B (TW)
Title: Method and system for controlling and managing network security
Inventor: HSIEH TSAI-CHUN
IPC: H04L9/00
Filed: 2002-06-12
Granted: 2005-03-01
Abstract: A method and a system for controlling and managing network security are provided. In operation, a programmable switch is provided in a communication network system, and an authority range is set in a network address register of the switch's connecting port. Then, a value of mask bit is set in an address mask register of the switch's connecting port for ""AND"" logic operation with a network address field of a terminal device. Finally, an address comparing module compares a safety address range with results of the logic operation so as to determine access authority to network resources for the terminal device.
Patent TW-562965-B (TW)
Title: System and method for reticle protection and transport
Inventor: FRIEDMAN GLENN M
IPC: G03F1/24
Filed: 2002-08-08
Granted: 2003-11-21
Abstract: A reticle protection and transport system and method for a lithography tool. The system includes an indexer that stores a plurality of reticles and a removable reticle cassette. The removable reticle cassette is comprised of an inner chamber and an outer chamber. The system further includes an end effector coupled to a robotic arm. The end effector engages one of the plurality of reticles to enable the reticle to be positioned within the removable reticle cassette and thereafter transported. The system further includes a seal, coupled to the end effector and the robotic arm. To transport the reticle, the reticle is first loaded onto the end effector. Next, the end effector is used to create an arrangement wherein the reticle is loaded into the removable reticle cassette. Importantly, the reticle and removable reticle cassette do not come into contact with one another. The reticle and removable reticle cassette arrangement is then sealed and transported from the indexer to a mount for performing lithographic exposure. Once lithographic exposure is completed, the arrangement is returned to the indexer and the reticle is withdrawn from the removable reticle cassette.
Patent TW-I222104-B (TW)
Title: Semiconductor wafer and method of fabricating the same
Inventor: ABE YOSHIHISA
IPC: H01L21/04
Filed: 2002-09-05
Granted: 2004-10-11
Abstract: A method of epitaxially growing a SiC film on a Si substrate, including (a) supplying a raw material gas containing a gas having P (phosphorus) element and a gas having B (boron) element on a Si substrate, and thereby synthesizing an amorphous BP thin film having a thickness of 5 nm or more and 100 nm or less on the Si substrate; (b) further supplying a raw material gas containing a gas having P element and a gas having B element on the Si substrate, and thereby synthesizing a cubic boron phosphide single crystal film having a thickness of 5 nm or more and 1000 nm or less on the Si substrate; and (c) supplying a gas having carbon element and a gas having silicon element on the Si substrate thereon the BP single crystal film is formed, and thereby synthesizing a beta-SiC single crystal film or an amorphous SiC film having a thickness of 1 nm or more and several hundreds nanometers or less on the cubic boron phosphide single crystal film on the Si substrate.
Patent TW-578291-B (TW)
Title: Method of self-latching for adhesion during self-assembly of electronic or optical components
Inventor: HUNTER ANDREW T
IPC: H01L23/60
Filed: 2002-09-25
Granted: 2004-03-01
Abstract: A method for assembling components on a substrate including the steps of: (a) selectively coating at least a first receptor site of the substrate with a liquid precursor that forms a solid adhesive upon contact with an initiator; (b) providing each of the components with an adhesion surface that has the initiator; and (c) depositing the components on the substrate in a manner that causes a first of the components to contact the at least first receptor site whereupon contact between the initiator and the liquid precursor causes formation of the adhesive which affixes the first compound to the first receptor site. In a preferred embodiment of the invention, the precursor is a liquid monomer and the initiator initiates a polymerization reaction upon contact with the monomer to form a solid polymer.
Patent TW-I225873-B (TW)
Title: Three-dimensional decorative product and its manufacturing method
Inventor: MATSUNO TAKEMI
IPC: C08J7/00
Filed: 2002-10-23
Granted: 2005-01-01
Abstract: A surface modification method of an adhesion retardant base material for facilitating adhesion, printing, painting, and the like, a surface modified adhesion retardant base material and a surface modification system of an adhesion retardant base material. In order to provide a surface modification method of an adhesion retardant base material, a surface modified adhesion retardant base material and a surface modification system of an adhesion retardant base material, a surface modification system comprising a section for storing fuel gas containing silane compounds containing silane atoms, titanium atoms or aluminum atoms and having a boiling point of 10-100 DEG C, a section for transporting the fuel gas to an injecting section, and the injecting section for blowing the flame of fuel gas is prepared and silicifying flame, or the like, is blown to the surface of the adhesion retardant base material entirely or partially.
Patent TW-I284366-B (TW)
Title: Edge gripping device for handling a set of semiconductor wafers in an immersion processing system
Inventor: HERBST TIM W
IPC: H01L21/00
Filed: 2002-11-12
Granted: 2007-07-21
Abstract: A microelectronic substrate handling device comprising first and second support structures spaced from each other, the first support structure having a series of upper teeth defining a series of upper notches extending along a length of the first support structure and a series of lower teeth defining a series of lower notches extending along a length of the first support structure, each of the upper and lower notches opening toward the second support structure, wherein the upper and lower notches are offset from each other by a predetermined offset distance so that an edge of a microelectronic device will fit differently within the upper and lower notches of the first support structure when supported between the first and second support structures.
Patent TW-I271789-B (TW)
Title: A method of forming a silicon nitride layer on a substrate
Inventor: CHEN STEVEN A
IPC: C23C16/34
Filed: 2002-11-27
Granted: 2007-01-21
Abstract: A silicon nitride layer is formed over transistor gates while the processing temperature is relatively high, typically at least 500 DEG C, and the pressure is relatively high, typically at least 50 Torr, to obtain a relatively high rate of formation of the silicon nitride layer. Processing conditions are controlled so as to more uniformly form the silicon nitride layer. Generally, the ratio of the NH3 gas to the silicon-containing gas by volume is selected sufficiently high so that, should the surface have a low region between transistor gates which is less than 0.15 microns wide and have a height-to-width ratio of at least 1.0, as well as an entirely flat area of at least 5 microns by 5 microns, the layer forms at a rate of not more than 25% faster on the flat area than on a base of the low region.
Patent TW-I221648-B (TW)
Title: Method and device for determining the vectorial distance between the capillary and the image recognition system of a wire bonder
Inventor: ONDA NICOLINO
IPC: B23K20/26
Filed: 2003-03-05
Granted: 2004-10-01
Abstract: To determine the vectorial distance D between the tip of a capillary (5) and an optical axis (8) of an image recognition system of a Wire Bonder, a glass fibre (10) supplied with light is used as a reference point and as a sensor. On the one hand, the glass fibre (10) serves as a reference point with which the position of the optical axis (8) of the image recognition system can be determined. On the other hand, the glass fibre serves as a sensor with which the position of the tip of the capillary (5) can be determined in that it is determined at which position of the bondhead (1) the intensity of the light which is reflected back into the glass fibre (10) by a wire ball (17) formed at the tip of the capillary (5) is at a maximum.
Patent TW-I230899-B (TW)
Title: Processor and method using parity check to proceed command mode switch
Inventor: LIANG BO-SUNG
IPC: G06F9/30
Filed: 2003-03-10
Granted: 2005-04-11
Abstract: The invention brings up the processor and method using parity check to proceed command mode switch, which may be executed in N-bit and 2N-bit modes. Each one N-bit word contains P parity bits and (N-P)-bit command codes, in which the parity bits of each N-bit mode command are that the N-bit word is set up as the first parity state and the parity bits of each N-bit word of each 2N-bit mode command are that its N-bit word is set up as the second parity state. The processor comprises a command input device, a command acquisition device and an execution mode switch logic. The command input device consists of a memory space with a width of 2N bits to supply the storage for the 2N-bit word representing a plurality of commands. The command acquisition device is used to acquire a 2N-bit word of the command code input device and the execution mode switch logic is used to determine if the acquired 2N-bit word is two (N-P)-bit commands or one 2(N-P)-bit command so as to switch processor for execution under N-bit mode or 2N-bit mode. When the acquired 2N-bit word is even parity, if the contained two N-bit words are all in the first parity state, the 2N-bit word is determined as two (N-P)-bit commands; if the contained two N-bit words are all in the second parity state, then the 2N-bit word is determined as one 2(N-P)-bit command.
Patent TW-593092-B (TW)
Title: Substrate floating apparatus and method of manufacturing liquid crystal display apparatus using the same
Inventor: PARK YONG-SEOK
IPC: B65G49/06
Filed: 2003-04-03
Granted: 2004-06-21
Abstract: There are provided a substrate floating apparatus for preventing interference between a glass substrate and a floating board when floating and conveying the glass substrate and a method of manufacturing LCD devices using the substrate floating apparatus. The substrate floating apparatus includes a body into which floating fluid is supplied and which stores the floating fluid, a floating board that is placed on the top of the body and through which the floating fluid is sprayed to float the substrate to the predetermined height, and a fixing member that mechanically fixes the floating board on the top of the body. A certain process is performed while floating the substrate.
Patent TW-I268097-B (TW)
Title: Method and system for enhancing portrait images
Inventor: SIMON RICHARD ALAN
IPC: G06V10/30
Filed: 2003-04-15
Granted: 2006-12-01
Abstract: A retouching method for enhancing an appearance of a face located in a digital image involves acquiring a digital image containing one or more faces and detecting a location of facial feature points in the faces, where the facial feature points include points identifying salient features such as skin, eyes, eyebrows, nose, mouth, and hair. The location of the facial feature points are used to segment the face into different regions such as skin, eyes, eyebrows, nose, mouth, neck and hair regions. Facially relevant characteristics of the different regions are determined and, based on these facially relevant characteristics, an ensemble of enhancement filters are selected, each customized especially for a particular region, and the default parameters for the enhancement filters are selected. The enhancement filters are then executed on the particular regions, thereby producing an enhanced digital image from the digital image.
Patent TW-578260-B (TW)
Title: Method of fabricating ONO dielectric for non-volatile memories
Inventor: YAO JUNE-MIN
IPC: H01L27/115
Filed: 2003-04-18
Granted: 2004-03-01
Abstract: A method of manufacturing a semiconductor device includes providing a polysilicon layer, forming a first oxide layer over the polysilicon layer through plasma oxygen radical reaction, forming a nitride layer over the first oxide layer through plasma nitrogen radical reaction, and forming a second oxide layer over the nitride layer through plasma oxygen radical reaction.
Patent TW-I277641-B (TW)
Title: Release coating containing thermoplastic silicone-containing polymer
Inventor: BANY STEPHEN WILLIAM
IPC: C09J7/29
Filed: 2003-04-24
Granted: 2007-04-01
Abstract: An article including a porous substrate that includes a fibrous material; and a release coating disposed on the fibrous material of the porous substrate; wherein the release coating includes a thermoplastic silicone-containing polymer. A method of making an article, which method includes providing a porous backing having a first major surface and a second major surface; applying a pressure sensitive adhesive to the first major surface of the porous backing; and applying an aqueous dispersion including a thermoplastic silicone-containing polymer to the second major surface of the porous backing to form a low adhesion backsize.
Patent TW-I226656-B (TW)
Title: Energy beam exposure method and exposure apparatus
Inventor: SASAKI NORIAKI
IPC: H01J37/317
Filed: 2003-05-23
Granted: 2005-01-11
Abstract: The present invention provides the related technology of energy beam exposure method and exposure apparatus, in which an exposure apparatus of CP way is used, so that the magnitudes of beam blur are different in XY direction, and thereby patterns can be transferred to the sample with high accuracy. A CP aperture mask (S9) is made by using the shape correction of the difference in the magnitudes of beam blur (S2) of the electron beam in XY direction, and the CP aperture mask is used to proceed a CP exposure on the sample.
Patent TW-I279409-B (TW)
Title: Process for making poly(ethylene-co-isosorbide) terephthalate polymer
Inventor: ADELMAN DOUGLAS J
IPC: C08G63/80
Filed: 2003-06-13
Granted: 2007-04-21
Abstract: The present invention is a process for making a low color copolymer of ethylene glycol, isosorbide and terephthalic acid or dimethyl terephthalate. This copolymer, poly(ethylene-co-isosorbide) terephthalate, is useful for making bottles, hot-fill containers, films, sheet, fiber, strand and optical article applications. It can also be used to make polymer blends and alloys.
Patent TW-I291231-B (TW)
Title: Semiconductor device having a capacitor and method of fabricating same
Inventor: CHUNG TAE-YOUNG
IPC: H01L29/40
Filed: 2003-06-19
Granted: 2007-12-11
Abstract: A semiconductor device comprises a semiconductor substrate and an interlayer insulating layer formed on the semiconductor substrate. The interlayer insulating layer preferably has a contact pad formed therein. A capacitor lower electrode is electrically connected to the contact pad. The capacitor lower electrode further comprises a pad-shaped storage node electrically connected to the contact pad; and a cup-shaped storage node arranged on the pad-shaped storage node. In this manner, it is possible to increase capacitance while reducing not open contacts. Leaning of the storage nodes can also be significantly reduced.
Patent TW-I271311-B (TW)
Title: Laminate sheet and producing methods therefor
Inventor: KATOH KAZUYA
IPC: C09J7/29
Filed: 2003-07-07
Granted: 2007-01-21
Abstract: An adhesive layer 3 and a base material 4 are laminated in this order onto a long release sheet 2 and a protective material 5 is provided on a portion of the base material 4 wherein the portion corresponds to a portion other than a principally used portion of the adhesive layer 3. According to the laminate sheet 1, the surface smoothness of the adhesive layer can be kept even when the laminate sheet is wound into a roll.
Patent TW-I237456-B (TW)
Title: Scaling using gain factors for use in data detection for wireless code division multiple access communication systems
Inventor: PAN JUNG-LIN
IPC: H04W88/02
Filed: 2003-07-14
Granted: 2005-08-01
Abstract: Data from a plurality of communications is transmitted in a code division multiple access communication system. The transmitted communications are received. Gain factors are determined for at least one of the received communications. Data of the received communications is detected using a scaling factor derived from the determined gain values.
Patent TW-I292728-B (TW)
Title: Liquid-cooled chilled-casting
Inventor: GERHARD HUGENSCHUTT
IPC: B22D11/055
Filed: 2003-07-24
Granted: 2008-01-21
Abstract: Liquid-cooled mold comprises mold plates (1) made from copper or copper alloy joined to an adapter plate or water tank by bolts (14) fixed to a base protruding from the coolant side (6) of the mold plate. The bolts protrude into a cooling gap (5) formed between the mold plate and the adapter plate and have a structure fitting the flow direction of the coolant.
Patent TW-I233246-B (TW)
Title: Adapter and mobile phone using it
Inventor: YAMANE HIROSHI
IPC: H01R12/79
Filed: 2003-12-11
Granted: 2005-05-21
Abstract: The adapter of the invention connects to a pair of FPCs, which provide strip insulation part having flexibility and wiring part installed inside the insulation part providing conductivity. The wiring part provides the end part exposing the front end of the said insulation part. The adapter comprises the receptacle case with insulation and terminal plug-in entrance, which is formed on the receptacle case and is inserted in parallel with the end part of the said a pair of FPCs. Based on the invention, as one adapter is connected to one pair of FPCs, the installing area of the adapter can be shrunk, or in relative to the case of connecting one pair of FPCs to two adapters, as those two adapters can be made in form of one piece, the installing area of adapter can be shrunk accordingly.
Patent TW-I230387-B (TW)
Title: Turning signal switch
Inventor: SUZUKI MICHIYUKI
IPC: H01H25/06
Filed: 2004-01-09
Granted: 2005-04-01
Abstract: The object of the present invention is to provide a turning signal switch, which can avoid lifetime reduction caused by abrasion of contact points, and also surely avoid bad electrical contact caused by permeating water into a box. To achieve the object, the present invention includes a box 1 capable of being fixed around the grip of an operating handle; an operating knob 2 capable of performing a swinging operation to the left and right from a center position and a pressing operation by taking the swinging axis 1c arranged in the box 1 as a center; a plastic magnet 3 capable of moving based on the swinging operation and pressing operation of the operating knob 2; a Hall device 4 for making the output voltages different from each other in response to the magnetism change accompanying the movement of the plastic magnet 3; and a determination logic part 5 for determining whether to make one of the left or right signal lamp of a bicycle flash or turn off based on the output voltage of the Hall device 4, and making the designated signal lamp flash or turn off based on the determination result.