baber/WOPTO huggingface dataset:
Patent JP-S62195132-A (JP)
Title: Semiconductor device with insulating layer and manufacture therefor
Inventor: TANABE KEIICHI
IPC: H01L21/283
Filed: 1986-02-21
Abstract: PURPOSE:To form an insulating film with excellent controllability and even thickness in each part while preventing it from peeling off from a substrate or layer by a method wherein the insulating layer is formed of a self fluoride.oxide layer of III-V group compound semiconductor substrate or layer. CONSTITUTION:A self fluoride layer is formed on a III-V group compound semiconductor substrate or layer by fluorination-process of the III-V group compound semiconductor substrate or layer. In this case, the fluorination is processed by the high-frequency discharge of carbon fluoride base gas mixed with rare gas such as argon etc. Next, the self fluoride.oxide layer as an insulating layer of the III-V group compound semiconductor substrate or layer is formed on the III-V group compound semiconductor substrate or layer by oxidation-process of self fluoride of III-V group compound semiconductor substrate or layer. In this case, the oxidation is processed by the high-frequency discharge of oxygen mixed with rare gas such as argon or the thermal oxidation in oxygen atmosphere. In other words, firstly the self fluoride layer is formed and secondly the self fluoride layer is oxidation-processed.
Patent JP-S54128376-A (JP)
Title: Display circuit
Inventor: KOBAYASHI SETSUTOSHI
IPC: G01R19/165
Filed: 1978-03-27
Abstract: PURPOSE: To display the previous maximum value of digital signals by storing it, together with the level at the present moment, by using A-D converter and first and second logic circuits for level display of a tape recorder or the like.  
     CONSTITUTION: An A-D converter 1 to convert a sound signal into a multi-bit digital signal is connected to OR circuits 2 to 5. The OR circuits 2 to 5 are connected to a latch circuit 6 which stores the outputs thereof temporarily. Exclusive OR circuits 7 to 10 have input terminals of one side 7A to 10A connected to output terminals 6W to 6Z of the latch circuit 6, and the uppermost terminal 7B out of the other input terminals 7B to 10B are connected to the 0 reference voltage while the rest of the terminals on the other side 8B to 10B are connected respectively to said input terminals 7A to 9A. A multiplexer 11 is connected to the A-D converter 1 and the exclusive OR circuits 7 to 10. A display device 12 is connected to the multiplexer 11, and a timing generating circuit 13 supplies timing signals P 1 , P 2  to the latch circuit 6 and multiplexer 11. 
     COPYRIGHT: (C)1979,JPO&Japio
Patent JP-H09229612-A (JP)
Title: Position detection device for buried object
Inventor: OHASHI TOSHIHARU
IPC: G01V3/08
Filed: 1996-02-26
Abstract: PROBLEM TO BE SOLVED: To improve accuracy of position detection. SOLUTION: This device detects the position of a buried object by comparing output of a pair of magnetic sensors 1a, 1b detecting magnetism of a permanent magnet 4 provided on the buried object 3 which is covered with a concealing object such as wall material 5. Both magnetic sensors 1a, 1b are arranged at an interval so that the output curves of the magnetic sensors 1a, 1b intersect in the vicinity of the inflection point in the characteristic of the curve for the outputs versus the distance of the respective sensors 1a, 1b from the permanent magnet 4. The output of the magnetic sensors can be set to be not so small when the permanent magnet is positioned in the vicinity of the middle point of both magnetic sensors, and output difference of both magnetic sensors can be set large against very small dislocation.
Patent JP-S53126324-A (JP)
Title: Production of carbon fiber
Inventor: KATSUKI KOUSUKE
IPC: D01F9/22
Filed: 1977-04-05
Abstract: PURPOSE: Organic fibers consisting of at least 2 kinds of polymers different in the speed of becoming flame-resistive wherein a polymer more rapidly becoming flame-resistive is arranged to the inside part of fibers and another polymer more slowly becoming flame-resistive is arranged to the outside part, are calcined thereby the time of operation for making flame-resistive is shortened and carbon fibers are produced without substantial reduction in fiber properties and perfomance. 
     COPYRIGHT: (C)1978,JPO&Japio
Patent JP-S59164770-A (JP)
Title: Novel prostaglandin d analog compound, its preparation and antitumor agent containing it
Inventor: ARAI YOSHINOBU
IPC: C07C401/00
Filed: 1983-03-10
Abstract: NEW MATERIAL:A prostaglandin (PG for short) D analog compound shown by the formula I {[A] is group shown by the formula II, III (double bond between C9-C10 is Z, etc.; X is ethylene, or cis-vinylene; C13-C14-C15 is group shown by the formula IV (double bond in C13-C14 is E), etc.; R is -CO-CR<3>=CR<4>R<5>(R<3>, R<4>, and R<5> are H, or 1-4C alkyl), etc.; R<1> is single bond, or 1-5C alkylene; R<2> is 1-8C alkyl, etc.}, or its cyclodextrin inclusion compound. EXAMPLE:1-O-(3,3-Dimethylacryloyl)-PGD2 alcohol. USE:A strong antitumor agent, having extremely low toxicity. PREPARATION:For example, a compound shown by the formula V (R<b> is H, etc.) is reacted using an aqueous solution of an acid such as HCl, etc. in an inert organic solvent such as methylene chloride, etc. at the reflux temperature of the solvent, to prepared the compound shown by the formula I (with the proviso that R=R<b>).
Patent JP-S58155748-A (JP)
Title: Coating method for semiconductor rectifier
Inventor: MIYATANI TAKASHI
IPC: H01L25/00
Filed: 1982-03-11
Abstract: PURPOSE:To expose only terminal sections without damage by a method wherein the terminal sections of a plate provided with a conductive metal film are coated with masking material made of elastic substance, the entirety is then covered with a coating, and finally the terminal sections are subjected to pressure for the masking material to deform or the coating thereon to be smashed. CONSTITUTION:The following procedure is followed in a process wherein the both surfaces of a plate type semiconductor rectifier are provided with a conductive metal film and then with another coating with terminals to be exposed at the both ends. That is, Cu foil 2 is applied to the both surfaces of a plate 1 made, for example, of SPC of a rectifier and the lead connecting holes 4 are provided in terminal sections 3 at the extremities of the plate 1. The terminal sections 3 are covered with masking material 5 made, for example, of rubber. The masking material 5 is shaped into disks 6 matching the terminal sections 3. Then the entirety is covered with a coating 8. The parts coated with the masking material 5 travel through a pair of rollers 9 so that numerous cracks 11 are produced in the coating 8, whereafter the masking material 5 is pulled out.
Patent JP-H11238633-A (JP)
Title: Chip inductor and its manufacture
Inventor: NAKAYAMA HIDEAKI
IPC: H01F27/29
Filed: 1998-02-20
Abstract: PROBLEM TO BE SOLVED: To reduce a fillet formed by a solder adhering to the periphery of electrode parts by a method, wherein the electrode part provided on both end on outer peripheral surface of a main body also coil parts connecting to the electrode parts are also provided on the outer peripheral surface, while both end faces are made into non-electrode part. SOLUTION: A chip inductor, having electrode forming parts forming electrodes on the outer peripheral both ends, is also provided with a prismatic main body 2 made of an insulating material having recession between the electrode forming parts 1. Electrode parts 4 extending over the entire periphery are provided on the electrode forming parts 1 of the main body 2, while a coil part 5 connecting to the electrode parts 4 is provided on the outer peripheral surface of the main body 2 between the electrode parts 4. On the other hand, the electrode parts 4 are not provided on the end face 6 of the main body 2 but is set as a non-electrode part 7. At this time, the non-electrode part 7 is formed by exposing the end face 6 of the main body 2. Furthermore, the coil part 5 and the electrode parts 4 are formed by covering the main body 2 with a conductor 8 made of an integrated copper.
Patent JP-H05200783-A (JP)
Title: Injection molding machine
Inventor: NAKAMURA TAKATOSHI
IPC: B29C45/62
Filed: 1992-01-30
Abstract: PURPOSE:To constitute the title machine so that peeling of resin is not generated on the inside of an end cap, by a method wherein the inside of the end cap with which only molten resin comes into contact is coated with a fluorine resin coating. CONSTITUTION:A nonadhesive surface treatment film such as a fluorocarbon film or metallic plating wherein a fluorine resin particles are dispersed or metallic plating wherein fluorocarbon is disused or an oil impregnated sintered body or a fluoro resin impregnated sintered body is applied to especially the insides of the end cap 4 and nozzle 3, that is, the surface of a part with which only the molten plastic comes into contact.
Patent JP-H03245470-A (JP)
Title: Molten carbonate type fuel cell generating device
Inventor: UEMATSU KOKICHI
IPC: H01M8/06
Filed: 1990-02-21
Abstract: PURPOSE:To accelerate reforming reaction, and thereby enhance reforming rats by connecting an inert gas line which adds inert gas to reforming raw gas to be supplied to a reforming chamber, to a reforming raw gas supply line to the reforming chamber. CONSTITUTION:A separator 21 is provided, which separates inert gas such as N2 and the like as a third substance which is not directly concerned with reforming reaction in a reforming chamber 5, an inert gas line 22 is connected to the mid-way of a natural gas supply line 8 in order that N2 as inert gas which is separated from air A by the separator 21, is added to natural gas NG as reforming raw gas so as to be supplied to the reforming chamber 5, and remaining O2 rich gas after N2 has been separated by the separator 21 is forwarded to an air line 12 at the inlet side of a cathode 2 through a line 23 so that the gas is changed into oxidizing gas. When natural gas NG as reforming gas is supplied to the reforming chamber 5 from the line 8, if vapor introduced from a vapor line 18 is supplied to the reforming chamber 5 while being mixed with natural gas NG, heat is absorbed, which is provided by reaction between a cathode 2 and an anode 3, so that reforming reaction is thereby run in the reforming chamber 5.
Patent JP-S59163853-A (JP)
Title: Manufacture of thin-film integrated circuit device
Inventor: MIYAJIMA EIJI
IPC: H01C17/22
Filed: 1983-03-09
Abstract: PURPOSE:To concentrate the resistance value of a resistor made of tantalum nitride to a value close to a required prescribed one by executing first heat treatment to the resistor and executing second heating treatment to the resistor at a temperature selected on the basis of a partial resistance value. CONSTITUTION:A tantalum nitide film is formed through a sputtering method, etc., and stabilized, heated and treated. The resistance values of partial resistors are measured, each chip is sorted on the basis of the resistance values, and groups consisting of chips, resistance values thereof approximate, are formed. A second heat treating temperature optimum for each group is selected from differences among the aimed resistance value of the resistors and the resistance values of each group, and second heat treatment is executed at the temperature. Accordingly, the resistance values of the resistors can be brought excellently close to the aimed resistance value regarding all chips.
Patent JP-H02218200-A (JP)
Title: Substrate position regulating device
Inventor: IKEDA YOSHIAKI
IPC: B65H9/14
Filed: 1989-02-17
Abstract: PURPOSE:To make it possible to perform automatically an adjustment of the interval between positioning members in every various substrates by a method wherein a driving source is controlled by a control device on the basis of data stored in a storage device in such a way that the interval between a pair of the positioning members corresponds to a printed board. CONSTITUTION:A value obtainable by subtracting the value of an X component, which is a length component in the feed direction of a substrate now in use among type data on various substrates, from a data value inputted in positioning offset data of automatic arrangement offset data is computed by a computer and is stored in a RAM 66. This computed value is the movement of a movable clamp, which is moved toward a reference clamp to be used as a positioning member to come into contact to the end part of the feed direction of the substrate. Moreover, by a control of a control device 74, a driving motor 45 is reversely rotated in such a way that the movable clamp is moved by this movement to move the movable clamp to an installing position. Thereby, the interval between a pair of positioning members, which is elastically engaged with both surfaces in the feed direction of a printed board, is automatically adjusted corresponding to the various substrates.
Patent JP-S63204743-A (JP)
Title: Manufacture of semiconductor device
Inventor: TAKAGI HIDEO
IPC: H01L21/3205
Filed: 1987-02-20
Abstract: PURPOSE:To build a polycide electrode excellent in resistance to heat and oxidation by a method wherein nitrogen is driven into a polycide silicide layer by means of ion implantation. CONSTITUTION:An SiO2 film 2 to be a gate oxide film is formed on an Si substrate 1 by thermal oxidation and is doped with phosphorus for the formation of a phosphorus-doped polycrystalline silicon layer 3. A TiSix layer 4 is formed by spattering and, from the top side thereof, a dose of 4X10<15>/cm<2> of nitrogen (N<+>) ions is implanted in a nitrogen ion implantation process 10 at an acceleration voltage of 70keV. Annealing in an oven follows, which continues for about 20 minutes in an nitrogen environment at approximately 850 deg.C. After this process, the TiSix comes to contain much TiSi2 which is a stable compound that is low in resistance. As the result of the nitrogen ion implantation process 10, nitrogen concentration in the TiSix lattice at a level in the TiSix layer 4 near to its interface with the phosphorus-doped polycrystalline silicon layer 3 is enriched, which stops Si atoms from infiltration.
Patent JP-H06251950-A (JP)
Title: Device and method for coil insertion
Inventor: KASAI TAKAYUKI
IPC: H01F41/04
Filed: 1993-02-26
Abstract: PURPOSE:To provide a coil inserting device with which a coil can be automatically inserted into a core. CONSTITUTION:The title coil inserting device is provided with a center pin 21 to be engaged to the center hole of a core, a bobbin 25 having the ring- shaped surface 25A arranged on the circumference of the above-mentioned center pin 21, and a push-out ring 31 which is arranged around the bobbin 25 and can be moved to axial direction between the push-out position and the retreat position. The push-out ring 31 is protruded from the ring-shaped surface 25A of the bobbin 25 when it is in the push-out position, a stepping is formed by the ring-like surface 25A of the pin 25 and the ring-like surface 25A on the outside in radial direction when the push-out ring 31 is in the retreating position, and the coil is supported by the above-mentioned stepping.
Patent JP-S54130870-A (JP)
Title: Contactless micro switch
Inventor: NISHIMURA ISAO
IPC: H03K17/97
Filed: 1978-04-03
Abstract: PURPOSE:To reduce a stroke to make a contactless micro switch small-size and long-life by moving two permanent magnets, which diminish mutually the magnetic flux density, in one body and arranging a magneto-electric onverter between these two permanent magnets. CONSTITUTION:Two permanent magnets 40 and 50 are fixed to a moving piece so that magnetic poles of the same polarity may be opposite to each other at a prescribed interval, and Hall IC 30 is arranged between these two permanent magnets. Magnetic flux density B which turns on Hall IC 30 is generated by permanent magnet 40, and the magnetic flux density which diminishes magnetic flux density B is generated by permanent magnet 50. Then, the mvong piece is driven on a basis of the external operation to reciprocate permanent magnets 40 and 50 along the line, which connects them, in one body, and one permanent magnet goes away from Hall IC 30 when the other permanent magnet approaches Hall IC 30.
Patent JP-S62198272-A (JP)
Title: Borehole television camera equipment
Inventor: HORI YOSHINAO
IPC: H04N5/225
Filed: 1986-02-26
Abstract: PURPOSE:To attain quick and easy investigation and analysis by photographing spirally all wall faces of desired length of a boring hole while a borehole television camera is rotated and descended and sampling an image pickup input of prescribed annular width and synthesizing the expanded picture automatically. CONSTITUTION:When the borehole television camera 2 is rotated at a constant speed by the rotation of a mirror 3, the television camera 2 is descended in the boring hole 1 at a constant speed so as not to be overlapped vertically synchronously with the rotation and the inner wall face of the boring hole 1 is spirally photographed over the length to be observed. A part of the picked-up pattern is sampled and written at each prescribed angle continuously at the same time, and an arithmetic processing circuit connects left/right/upper/ lower patterns so as not to be overlapped, the result is outputted and a consecutive expanded picture is obtained on a screen of a monitor television equipment.
Patent JP-H07216384-A (JP)
Title: Device for preventing candle from flowing down and candle prevented from flowing down
Inventor: SAKAMOTO ETSUO
IPC: C11C5/00
Filed: 1994-01-27
Abstract: PURPOSE:To provide a device which does not allow a burning candle to flow down nor leaves behind residues (soot) even when the flame flickers or swings by selecting the device with a specified shape, and to obtain a candle prevented from flowing down by using the device. CONSTITUTION:This device is obtd. by boring a hole for a wick to pass through in a noncombustible plate 3 having a size large enough to cover the top of a candle, installing, at the upper or both the upper and lower side of the hole, a heat conductor 4 or 4 and 5 having a hole allowing the wick to easily pass through, and forming a heat collection part 6 at the top of the conductor 4. The device is fixed to a candle with the wick passing through the device, thus covering the top of the candle and preventing the candle from flowing down. The device may be fixed to a candle covered in advance with a polymer film which thermally shrinks at 50 deg.C or higher. A candle prevented from flowing down is also obtained.
Patent JP-H04259311-A (JP)
Title: Production of composite material
Inventor: NANBA YOSHIO
IPC: B22F9/08
Filed: 1991-02-08
Abstract: PURPOSE:To obtain a composite material having superior flowability and excellent in feed stability by mixing a single or plural kinds of aggregate grains of specific grain size with the fine metal grains in the course of flowing down. CONSTITUTION:A molten metal is allowed to flow down in a nonoxidizing atmosphere and the molten metal in the course of flowing down is formed into fine grains by the collosion with an inert-gas jet stream. Then, fine solid grains having a composition dissimilar to that of the resulting falling fine grains are mixed with these fine grains and the resulting mixed grains are solidified while being deposited on a substrate, by which the composite material can be obtained. As the solid grains, a single or plural kinds of aggregate grains of 10-200mum average diameter are used. Further, Fe, Al, Cu, Ni, or alloy thereof is used as the metal to be a matrix, and also, reinforcing metals, such as W and Mo, various intermetallic compounds, etc., are used as the fine solid grains.
Patent JP-2000239041-A (JP)
Title: Surface treated dried glaze raw material powder and apparatus for automatically producing glaze
Inventor: AOYAMA TAKEYOSHI
IPC: C04B41/86
Filed: 1999-02-17
Abstract: PROBLEM TO BE SOLVED: To obtain a raw material powder capable of readily mixing and producing a glaze by operations in a short time without causing a secondary aggregation in an aqueous solution even when being stored by carrying out pulverization until a specific value of particle diameter is obtained for every glaze raw material having silicate groups, mixing a surfactant for every aqueous solution, then drying the resultant slurry as an intact fine powder and further applying a surfactant to the surface thereof. SOLUTION: Pulverization of a glaze raw material having silicate groups such as quartzite, feldspar or frit is carried out until the particle diameter becomes, e.g. average 0.1-10 μm for every raw material and at least a low-molecular weight surfactant in an amount of 0.05-5% based on the surface area is mixed for every aqueous solution and stirred. The resultant slurry is then dried as an intact fine powder with the surfactant applied thereto by a spray dryer, etc. Furthermore, a high-molecular weight surfactant in an amount of 0.05-5 wt.% together with the low-molecular weight surfactant can be mixed. A glaze can be produced simply by charging the surface treated dried glaze raw material powder produced by the method into water together with other glaze raw materials and stirring the resultant mixture.
Patent JP-S62198162-A (JP)
Title: Mos transistor and manufacture thereof
Inventor: CHOKAI AKIRA
IPC: H01L21/265
Filed: 1986-02-26
Abstract: PURPOSE:To suppress punch-through even in case of miniaturization by implanting as counter ions of the same type as the semiconductor surface region of a substrate at least around source, drain regions in case of ion implantation. CONSTITUTION:A P-type single crystal silicon plate 1 is prepared, an active element region 11 surrounded by a field insulating film 10 is formed by a normal element separating method, a gate oxide film 3 and a polysilicon gate electrode 2 are formed, and arsenic ions 5 are implanted to form first and second regions 5, 5'. Then, sidewalls 4 are formed at normal LDD according to a structure forming method, with the sidewalls as masks boron ions 5 are implanted to form third and fourth regions 6, 6'. Thereafter, arsenic ions are implanted to form fifth and sixth regions 7, 7'. The junction region of source, drain region and a channel region are controlled only by controlling the ion implanting of the regions 5, 5' and the ion implanting lateral diffusion of the regions 6, 6'. Thus, a transistor as shown can be formed.
Patent JP-S62198110-A (JP)
Title: Injection molding machine for plastic magnet
Inventor: FUJISAWA MASAHIRO
IPC: B29C45/26
Filed: 1986-02-26
Abstract: PURPOSE:To shorten the molding cycle of a plastic magnet by connecting bypass means in parallel with an electromagnetic coil when a current flowing to the coil is turned OFF, and disconnecting the coil from the means when the current to be measured after the current is OFF coincides with a set current value. CONSTITUTION:When thyristors 12, 15 of switch units 16, 17 are operated, currents flow to electromagnetic coils 6, 7, and when the currents are stabilized, melted magnetic plastic is injected in a cavity. When the currents are stabilized and a predetermined time is elapsed, the thyristors 12, 15 are turned OFF. When a thyristor 19 is simultaneously turned ON, an exciting current is abruptly attenuated. When the current value set in a current setter 23 coincides with that detected by a current detector 21 due to the attenuation of the exciting current, a controller 24 closes a switch 20, turns OFF the thyristor 19. As a result, the both terminals of the thyristor 19 become zero volt to continue the off state. The switch 20 is opened before the demagnetizing current flows.