baber/WOPTO huggingface dataset:
Patent JP-S60118978-A (JP)
Title: Display system in document forming device
Inventor: KASUYA FUMIO
IPC: G06T11/60
Filed: 1983-12-01
Abstract: PURPOSE:To improve the working performance of proof job or the like by adding a logical arithmetic device comprising ICs so as to quicken the 2nd and succeeding editing processing speeds. CONSTITUTION:Edition is performed at input (a) by various editing commands with the adoption of characters of the operator using an input device 1, the edited character and symbol or the like is displayed on a display screen and also the input data is stored in an original file X in pairs with the edition keyword. Required parts of an original are retrieved by the indication from the operator using the input device 1 at proof (b), and the editing keyword and a source data transmitted to a logical operating device 8. A logical operating device 8 calculates the relative coordinate position in one logical line from them, calculates the absolute position on a print paper sheet by the operation with the value of a line feed amount integrating counter counted integratingly at the preceding retrieval and displays the result on a CRT display device 6. The operator corrects a sentence by the display screen.
Patent JP-S59162047-A (JP)
Inventor: ERUHAADO KURINKUHAATO
IPC: G06K19/02
Filed: 1983-12-01
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。
Patent JP-H0677248-A (JP)
Title: Manufacture of amorphous silicon thin film transistor
Inventor: KANDA YASUNARI
IPC: H01L29/786
Filed: 1992-08-25
Abstract: PURPOSE:To provide a method of manufacturing an amorphous silicon thin film transistor, which keeps cleanly the surface of a non-doped amorphous silicon layer and is capable of obtaining a good contact. CONSTITUTION:(A) A gate electrode 12 is formed on an insulative substrate 11 into a prescribed form and thereafter, a gate insulating layer 13 and a non- doped amorphous silicon layer 14 are formed in order and a photoresist layer 15 is formed. (B) A protective insulating layer 16 is formed. (C) The layer 15 and the layer 16 on the layer 15 are removed by a lift-off method and an insular structure consisting of the layer 16 is formed. (D) An impurity-doped amorphous silicon layer 17 is formed. (E) Source/drain electrodes 18 are formed.
Patent JP-H0957562-A (JP)
Title: Tool acceptance and delivery method of double magazine
Inventor: YOSHII SHUICHI
IPC: B23Q3/157
Filed: 1995-08-10
Abstract: PROBLEM TO BE SOLVED: To shorten the time for accepting/delivering tools by determining an acceptance/delivery position of tools in magazines at a shortest delivery route lying on the upper part of magazines and bringing a tool exchange position with a main spindle near to the tool acceptance/delivery position. SOLUTION: Pots P1, P2, P3... and tool exchange pots P0, P0 are accepted/ delivered between tool accepting/delivering positions with tool keys facing in the same direction, by means of a moving means 10 placed in the shortest route (L) for connecting two magazines. In addition, the pots P1, P2, P3... and the tool exchange pot p0 are accepted/delivered between tool exchanging positions, with the tool keys facing in the same direction, by means of a moving means 20 installed in the shortest route connecting a tool exchange arm 2 and a magazine M1. In addition, in a magazine 2, a tool taking-out/putting-in position at which a tool is taken out or put in between the pot P0 for exchanging the tool for exclusively manual operation and the outside, is prepared.
Patent JP-S60117766-A (JP)
Title: Semiconductor device
Inventor: HIRANO YOSHIYUKI
IPC: H01L21/8238
Filed: 1983-11-30
Abstract: PURPOSE:To facilitate design, by forming a metal silicide layer on both sides of a polycrystalline silicon layer, thereby eliminating connecting parts of metal wirings, and reducing the intervals among a p<+> diffused layer, an N type substrate, a P well, and an n<+> diffused layer, thereby increasing the freedom of the layout of the interval between p<3> and n<+>. CONSTITUTION:A source and a drain 47 and 47' and an N type impurity silicon layer is fomred. Thereafter a metal layer 48 is formed on the entire surface in order to form a metal silicide. The metal 48 contacts with polycrystalline silicon layers 41'-41'' only on the side surface of the silicon layer. A metal silicide layer 49 is formed only on the side surface, with which the polycrystalline silicon layers 41'-41'' are contacted by a sinking processing. Then, an interlayer insulating film 50 is grown on the entire surface by CVD method. Thereafter, in the desired diffused layers and polycrystalline silicon layers, contact holes 51, 51', 52, 52' and 53 are provided. The silicide layer 49 at the hole parts is not exposed at this time. A metal wiring layer 54 is formed, and a CMOS device is completed.
Patent JP-H0781524-A (JP)
Title: Wiper motor attaching structure
Inventor: INOUE KENICHI
IPC: B60S1/08
Filed: 1993-09-10
Abstract: PURPOSE:To match the range to be wiped by a wiper to the wiping range to be set by restraining overrun in reversing of a wiper arm. CONSTITUTION:In a wiper motor attaching structure wherein fixed legs 21a, 21b fixed on a wiper motor 20 are attached to a vehicular body panel 10 by bolts 23a, 23b, two inclined surfaces 10a, 10b inclined in the direction to partially receive inertia force in reversing of the reciprocating motion of a wiper link 27 to reciprocate after being linked with the rotation of an output shaft 24 of the wiper motor 20 are so provided as to be faced to each other. Moreover, the fixed legs 21a, 21b are attached along the respective inclined surfaces 10a, 10b by using the bolts 23a, 23b.
Patent JP-S60119866-A (JP)
Inventor: OGASAWARA KINROU
IPC: B23K9/00
Filed: 1983-11-30
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。
Patent JP-S6381926-A (JP)
Title: Dry etching device and its controlling method
Inventor: HIROBE YOSHIMICHI
IPC: C23F1/00
Filed: 1986-09-26
Abstract: PURPOSE:To improve processing precision and a speed for a sample, by applying high-frequency power to the second electrode independently of the first electrode and depositing a material, which is dispersed from the second electrode, on a sample and etching an etching protective film as well as forming it on the surface of the sample. CONSTITUTION:A gas G1 having gaseous characteristics I and III is made to flow into a processing chamber 1. When high-frequency power is applied to the first electrode 3 under a condition of a point A, anisotropic etching on the first stage is performed and a pattern 17' of polycrystal Si is formed and a conventional etching remnant 17'' is generated on a steep step-difference part 19. Then, while the gas G1 is exhausted, a gas G2 is supplied. When the high-frequency power is applied to the second electrode 13 under the condition of a characteristic point C shown in a figure, an etching protective film is deposited on a sample 2. Successively, when the high-frequency power is applied to the first electrode 3 so that an etch rate comes to a point B' shown in the figure, the etching protective film is removed on the other region excepting a side wall of the steep step-difference part. When the power application to the first electrode 3 is controlled thereafter so that the etch rate comes to a point B, the etching processing is promoted in the direction in which the sample 2 becomes thicker.
Patent JP-S60118348-A (JP)
Title: Upset working method of drill pipe
Inventor: KAWATE TAKAO
IPC: B21D19/08
Filed: 1983-11-30
Abstract: PURPOSE:To improve a shock resistance and a fatigue resistance by performing a rational heating control to a pipe end of a drill pipe material, and suppressing a generation of a stress concentration in a thickness increased part of the inside surface of the pipe end. CONSTITUTION:A pipe end part 10A of a drill pipe material 10 is heated up to a set temperature. Subsequently, a temperature of the pipe end part 10A heated to this set temperature is held for a prescribed time in a state of the set temperature. Next, after the prescribed time has elapsed, the pipe end part 10 is upsetted. Also, it is prevented that a stress concentration is generated in a thickness increased part A of the inside surface of the pipe end. A drill pipe obtained in this way is excellent in its shock resistance and fatigue resistance.
Patent JP-S6385088-A (JP)
Title: Epitaxy for semiconductor
Inventor: HORIKOSHI YOSHIHARU
IPC: C30B29/40
Filed: 1986-09-26
Abstract: PURPOSE:To make it possible to control impurities with a less steepness than the thickness of a monoatomic layer, by applying a specific element (A) onto a single crystal substrate of a semiconductor, irradiating the atomic surface with hydrogen, applying a specific element (B) and repeating the above- mentioned process. CONSTITUTION:A group III or II element and group V or VI element is alternately fed onto a single crystal substrate of a semiconductor to grow a III-V or II-VI compound semiconductor on the substrate by epitaxy. In the method, three processes shown in the following (A) or (B) are alternately repeated. (A) (i) The group III or II element is applied to the substrate while irradiating the substrate with beams of a group V or VI element in an amount not to link to the group III or II element and form a compound; (ii) the atomic surface of the group III or II element is irradiated with hydrogen and (iii) the group V or VI element is fed and applied onto the substrate. (B) (i) Group III or II atoms are fed and applied onto the substrate; (ii) the atomic surface of the group III or II element is irradiated with the hydrogen and (iii) group V or VI atoms are fed and applied onto the substrate.
Patent JP-2001050760-A (JP)
Title: Navigation system
Inventor: SAKUMA KAZUJI
IPC: G08G1/0969
Filed: 1999-08-10
Abstract: PROBLEM TO BE SOLVED: To provide a navigation system capable of storing information in points where a user stops, and capable of retrieving easily the points. SOLUTION: When a stopped condition is detected by a stop detecting part (S11), it is determined whether the stopped condition continues for a prescribed time or more by a control part (S12-S14), and parking position information and various kinds of information about parking are stored in an SRAM as parking history information in the case of the prescribed time or more (S15). A user retrieves thereby a destination based on the parking history information when the user conducts a required input operation.
Patent JP-S61103840-A (JP)
Title: Dermatologic administration composition
Inventor: ABE YOKO
IPC: A61K9/70
Filed: 1984-10-26
Abstract: PURPOSE:A dermatologic administration composition having raised skin penetration and percutaneous absorption of medicinal component, containing an aliphatic hydrocarbon ester of a 1-alkyl-2-pyrrolidone-5-carboxylic acid. CONSTITUTION:A dermatologic administration composition containing at least one of 7-12C compound and >=13C ester compound as an aliphatic hydrocarbon ester of a 1-alkyl-2-pyrrolidone-5-carboxylic acid. A pyrrolidonecarboxylic acid or its salt used as an emollient agent for cosmetic, or a pyrrolidonecarboxylic ester has been used as a nonaqueous surface active agent, it is further found that it propmotes percutaneous absorption of drug. The 7-12C compound among the esters can increase absorption promoting effect generally by using, It together with a nonpolar hydrophobic compound (e.g., 7-20C alcohol), and the >=13C compound by using it with a hydrophilic compound (e.g., 1-5C alcohol) having high polarity.
Patent JP-S6380600-A (JP)
Inventor: TAKAKUBO MASAAKI
IPC: C08G61/12
Filed: 1986-09-24
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。
Patent JP-H0660930-A (JP)
Title: Anisotropic conductive connector and manufacture thereof
Inventor: YAMANAKA YUTAKA
IPC: H01R43/00
Filed: 1992-08-03
Abstract: PURPOSE:To manufacture a connector, which has a high reliability and which can stand up to the repeat of insertion and pulling-out, easily by drilling holes in the surface of a resin sheet in the vertical direction, and burying the conductive paste in these holes. CONSTITUTION:Holes are drilled in the surface of a resin sheet 1 in the vertical direction. Conductive paste 3 is buried in these holes, and hardened to form a connector. Since the thick sheet having the rubber-like elastic body is used, diameter and pitch of a conductor can be set freely. Cutting of a conductor is not required, and the fall of a conductor due to the looseness is prevented, and an anisotropic conductive connector, which can stand up to the repeat of the insertion and pulling-out to improve the reliability, can be manufactured easily.
Patent JP-H0895968-A (JP)
Title: Word ejecting system
Inventor: YAMAKAWA YUKIKO
IPC: G06F17/22
Filed: 1994-09-21
Abstract: PURPOSE: To reduce the scale of a dictionary for Japanese translation, to reduce the trouble of homonym selection for a user and to improve operability for Japanese inputting. CONSTITUTION: A dictionary 11 for Japanese translation is provided with a word use flag for holding index information and word information corresponding to this index information and showing whether any word is fixedly used for each of word information or not and an index use frequency counter for counting the number of times when each index is used. A sub-dictionary 13 ejects non-used words. When the index use frequency counter reaches a certain reference value, a non-used index word extracting part extracts the word, which has not been determined to be used at all, from the information of the word use flag. A non-used word ejecting part 16 ejects the extracted non-used word to the sub-dictionary.
Patent JP-H0390082-A (JP)
Title: Racemization of optically active quinazolinone derivative
Inventor: HAYASHI HIRONORI
IPC: C07D487/04
Filed: 1989-08-31
Abstract: PURPOSE:To enable the reutilization of useless optically active isomer by heat- treating an optically active isomer (salt) of a quinazolinone derivative, thereby racemizing the derivative with a simple operation. CONSTITUTION:An optically active isomer (salt) of a quinazolinone derivative of formula (R is H or halogen) (e.g. l-3-methyl-1,2,3,4-tetrahydroquinazoline-4- spiro-4'-imidazolidine-2,2',5-trione) is racemized by heat-treating e. g. at 60-190 deg.C preferably in the presence of 3-15 times mol of an acid (e.g. hydrochloric acid, sulfuric acid, nitric acid, phosphoric acid, formic acid, acetic acid, p-tosylic acid or methanesulfonic acid).
Patent JP-H04109332-A (JP)
Title: Memory integrated circuit
Inventor: ARIMA KAZUNORI
IPC: G06F5/00
Filed: 1990-08-30
Abstract: PURPOSE:To allow this memory integrated circuit to correspond to a system with various data arrays by providing the memory integrated circuit with a conversion circuit for converting a data array stored in a memory main body and outputting the converted data array when a specification signal indicating the conversion of a data array and the output of the converted array is active. CONSTITUTION:In the shown figure, a timing circuit 11 generates a timing signal for accessing the memory main body 12 from signals obtained from an address line 14 and a select signal line 15. The memory main body 12 stores data. A data array conversion circuit 13 rearranges a data array. When a signal on a data array conversion signal line 16 is active, the circuit 13 converts the data array. Data stored in an address of the memory main body 12 indicated by the signal obtained from the address line 14 are outputted to a data line 17 through the circuit 13 when the succeeding signal on the select signal line 15 is active.
Patent JP-S60119501-A (JP)
Title: Production of optical element
Inventor: YAMADA TAKESHI
IPC: G02B5/00
Filed: 1983-12-02
Abstract: PURPOSE:To improve an optical element by gelling a soln. of a specific photodecomposable org. metallic compd., photodecomposing the compd., drying the compd. by heating and removing the unreacted compd. thereby manufacturing the desired glass and manufacturing a high refractive part. CONSTITUTION:A soln. 1 consisting principally of at least one kind of metallic alcoholate, org. solvent and water and added with a photodecomposable org. metallic compd. is put into a vessel 2. A base plate 3 is installed in the soln. 1 and while a beam 4 to gel the alcoholate and a beam 5 to decompose the org. metallic compd. are irradiated to the liquid from above the liquid surface, the plate 3 is sunk into the liquid. A patterned free metallic part 7 is then made in a gel 6. Such gel 6 is taken out of the soln. and is dried by heating; at the same time the unreacted org. metallic compd. is removed to manufacture an optical element. The manufacture of the high refractive index part is thus made possible simultaneously with patterning of the glass.
Patent JP-H04106740-A (JP)
Title: Manufacture of optical information recording member
Inventor: ONO EIJI
IPC: H01F41/18
Filed: 1990-08-28
Abstract: PURPOSE:To enable filming on a stable sputtering condition by producing all the plural targets by an (n) kind of elements and making the composition ratios of the plural targets respectively different near the composition of a recording film. CONSTITUTION:When producing the recording film composed of the (n) kind of elements by the method of simultaneous sputtering (Sp) from plural targets (Ta), all the plural Ta are produced by the (n) kind of elements and the composition ratios are made respectively different near the composition of the recording film. Namely, filming is executed while rotating a substrate above the central position of the targets Ta, T1, T2 and T3. In this case, the diameter of all the Ta is 100mm, a distance from the three Ta to a substrate 1 is 150mm, the circular glass substrate having a diameter 130mm is used for the substrate and the Sp is completely executed by a DC magnetron method. Thus, power applied to the Ta can be set at the same degree and filming is enabled on the stable sputtering condition.
Patent JP-H1158416-A (JP)
Title: Manufacture of minute structure
Inventor: TANAKA SHUNEI
IPC: B29C39/02
Filed: 1997-08-08
Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing a minute structure which can manufacture parts having various kinds of minute structure. SOLUTION: A movable mold 11 is made to approach a fixed mold 10 along a guide pin 20, and both are stuck together on a mold division surface. A molten plastic is supplied from a runner 21 into a cavity and packed in parts other than a core 12. An electric current is passed through a Peltier element 15 from a power source, and the element 15 is cooled. The core 12 is cooled and contracted to be separable from a nozzle plate 17. After that, the movable mold 11 is moved from the mold division surface 19 along the guide pin 20, a mold is opened, and the nozzle plate 17, which is a molding, is removed by ink-jet device installed in the movable mold 11. Since the core 12 is cooled and contracted, the nozzle plate 17 can be removed easily.
Patent JP-H0897146-A (JP)
Title: Method of forming oriented film
Inventor: MASUYA HARUKO
IPC: H01L21/203
Filed: 1994-09-22
Abstract: PURPOSE: To provide a method which can form a film oriented with high accuracy without using a special device and besides on a board of any kind of film quality. CONSTITUTION: In the first process, an oriented film formation layer 11 is made on a substrate 10. In the second process, the oriented film formation layer 11 is made amorphous, leaving crystal grains 14, by applying an ion beam 12 from the direction where the crystal grains having desired orientation property generates channeling within the oriented film formation layer 11 to the oriented film formation layer 11. In the third process, the oriented film formation layer is recrystallized, taking over the orientation property of the crystal grains, by performing the heat treatment of the oriented film formation layer 11. Hereby, an oriented film 15, whose orientation is controlled by the direction of an ion beam, is made on the substrate 10.
Patent JP-H0897486-A (JP)
Title: Hall sensor
Inventor: YAMADA SHIGEKI
IPC: H01L23/28
Filed: 1994-09-22
Abstract: PURPOSE: To facilitate the mass-production of Hall devices, suppress the deterioration of the characteristics and improve the sensitivity of the Hall device by a method wherein the Hall device is sealed with molding resin and magnetic materials are buried in the molding resin. CONSTITUTION: A Hall device chip 3 bonded to a lead frame 2 is molded with resin so as to have recessed parts in the resin near the front and rear of the chip 3. That is, the thicknesses of the parts of the molding resin 1 which cover the front and rear of the chip 3 are reduced to form truncated cone or pyramid recessed parts 7. The smaller area bottom parts of the truncated cone or pyramid recessed parts 7 are on the chip 3 side. Conical trapezoidal or pyramid trapezoidal magnetic materials 6, for instance ferrite pieces, which fit to the recessed parts 7 in the molding resin 1 are prepared and bonded into the recessed parts 7 with the same molding resin. After that, a lead frame is coated with solder, cut off and formed to complete a Hall sensor.
Patent JP-H0742689-A (JP)
Title: Liquid suction and discharge device
Inventor: KUBO YASUHITO
IPC: F04D13/08
Filed: 1993-07-30
Abstract: PURPOSE:To provide a liquid suction and discharge device made portable so as to be excellent in mobility in addition to functioning effectively in residual water disposal liable to suck air by self-priming action and gas-liquid separating action in a gas-liquid separating chamber provided with plural delivery passages in this liquid suction/discharge device using a submerged centrifugal pump. CONSTITUTION:Water is supplied from a priming hole 12 so as to fill a vortex flow chamber 4, and in the state of a suction port being connected to a supply source, a motor with an impeller 15 mounted on a rotary shaft 14 is driven. Gas-liquid sucked into the vortex flow chamber 4 through a suction passage 17 is thereby discharged from a discharge port 8 while cooling a motor chamber 5 in the process of passing a discharge channel 6 from a first delivery passage. on the other hand, only the liquid with a low gas mixture ratio at the row part in the vortex flow chamber 4 is delivered from a second delivery passage 18b. The liquid with a low gas mixture ratio is then separated into gas and liquid in a gas-liquid separating chamber 19. As a result, gas ascends in the discharge channel 6, and liquid flows in a return channel 20 so as to be returned into the vortex flow chamber 4 from a self-priming hole 3.
Patent JP-S6471294-A (JP)
Title: Switching circuit network
Inventor: UEDA HIROMI
IPC: H04Q3/52
Filed: 1987-09-11
Abstract: PURPOSE:To attain large sized spatial switch without increasing the switching relation connected so far by constituting N-set of intermediate switches of a 3-stage switching circuit network by m-set of unit switches and connecting input terminals properly. CONSTITUTION:N-set of intermediate switches of a 3-stage switching circuit network consist respectively of m-set of unit switches. Input terminals corresponding to the m-set of unit switches are interconnected. Moreover, two sets of 3-stage of switching circuit networks are provided as a whole.