baber/WOPTO huggingface dataset:
Patent KR-20040031115-A (KR)
Title: Portable and Automatically Erupting Fire Suppression Equipment
Inventor: KIM SUCCESS S
IPC: A62C13/00
Filed: 2002-10-04
Abstract: PURPOSE: A combination portable and automatic diffusion extinguisher is provided to solve the defect of the portable extinguisher that a man has to hand-operate the extinguisher directly in case of fire. CONSTITUTION: A combination portable and automatic diffusion extinguisher has a structure to add a blow part(including a valve, a Cyphon and a temperature sensor) operated automatically to the conventional portable extinguisher. The blow part works automatically when reaching the determined temperature and have the fire suppression material jetted and diffused. The extinguisher works automatically even if man is not at fire site or does not know how to operate the portable extinguisher, thereby suppressing the fire.
Patent KR-20040033140-A (KR)
Title: system for providing electronics program guide and method thereof
Inventor: AHN CHI DEUK
IPC: H04N5/445
Filed: 2002-10-11
Abstract: PURPOSE: A system for providing an electronic program guide and a method therefor are provided to easily and conveniently use program information by providing the program information in voice. CONSTITUTION: A service information receiver unit(10) receives and stores service information transmitted from broadcasting stations, and extracts EPG(Electronic Program Guide) information from the service information for storing the extracted EPG information. A graphic output unit(30) processes and displays video and data stream among the data received and processed from the service information receiver unit, or displays EPG information provided from an EPG processor(20). The EPG processor converts the EPG information stored in the service information receiver unit into sound EPG information. A voice output unit(40) converts characters and sentences provided from the EPG processor to voice signals. A user interface device(50) inputs user's request.
Patent KR-20040033514-A (KR)
Title: inproved walking stick
Inventor: PYON SANG BOK
IPC: A45B5/00
Filed: 2002-10-14
Abstract: PURPOSE: An improved walking stick is provided to reduce the weight and to simplify the structure of the walking stick and thus, to increase user's convenience for carrying the walking stick anywhere. CONSTITUTION: The improved walking stick includes a hole(3) perforated at the top of the walking stick(2) with a handle(1). Two more holes(4,5) are perforated at the top and bottom part of the middle side wall of the walking stick(2). Into the top hole(4) is inserted a front end notch(7) of a left plate(6) with a guide wall(6') to pass through an axis pin(8) for riveting. A bolt(9) is inserted into the bottom hole(5). Also, a central hole(10) is perforated into the hollow of the walking stick(2). An inclined surface(11) is formed at one end of the stick(2) and a bedplate(13) into which a rubber plug(12) is inserted is loaded on the other end so that the rubber plug(12) is tightly fitted into the hole(3).
Patent KR-20020086410-A (KR)
Inventor: KWON JEE YEAL
IPC: A01D1/08
Filed: 2002-10-19
Abstract: PURPOSE: A fastener for a blade and a stem of a scythe is provided to simplify the whole structure of the scythe, thus facilitating the manufacture and assembly works thereof. CONSTITUTION: The fastener for coupling a blade and a stem of a scythe comprises an insertion portion(3) defined between front and rear wall panels(4,4a) for allowing a stem fixing plate to be fitted between the panels. The wall panels are formed with a hinge pin hole(5) and a tightener(6) respectively. Also, the fastener has a lower stem fixing part(7) formed with stem fixing holes(8).
Patent KR-20040035500-A (KR)
Inventor: HWANG SEON I
IPC: H01L21/68
Filed: 2002-10-22
Abstract: PURPOSE: A lift pin leveling apparatus for wafer stage is provided to level simultaneously a plurality of lift pins by using a leveling unit having a leveler and a plurality of lift pins. CONSTITUTION: A wafer stage includes a wafer chuck(13) and a plurality of lift pins(11). A wafer is loaded on an upper surface of the wafer chuck(13). The lift pins penetrate a through-hole(13a) formed on the wafer chuck in order to load the wafer into the upper surface of the wafer chuck or unloads the wafer from the wafer chuck. A lift pin leveling apparatus includes a base substrate(25) and a leveling unit(20). One or more leveler(21) are installed on an upper surface of the base substrate(25). The leveling unit(20) is installed at a lower part of the base substrate and is formed with a plurality of leg members(23), which are close to the lift pins.
Patent KR-20040037534-A (KR)
Title: Electrolyte composition having high safety when overcharged
Inventor: CHOI JONG HYEOK
IPC: H01M10/42
Filed: 2002-10-29
Abstract: PURPOSE: Provided are an electrolyte composition excellent in over-charge safety and a lithium secondary battery produced by using the composition, which is excellent in safety for over-charge, cycle property, and bulging property. CONSTITUTION: The electrolyte composition contains a lithium salt, an organic solvent, and 0.1-5wt% of a nitrogen-containing compound and 4-10wt% of cyclohexyl benzene as additives, wherein the nitrogen-containing compound is primary, secondary, or tertiary amine or a polymer, a copolymer, or an oligomer thereof. And the lithium secondary battery is produced by injecting the electrolyte composition into a battery case having an anode, a cathode and a separator, and then sealing.
Patent KR-20040038299-A (KR)
Inventor: KWON HOE HYEON
IPC: B60R13/08
Filed: 2002-10-31
Abstract: PURPOSE: A sound-absorbing/insulation material is provided to reduce the weight of a vehicle by forming a sound-insulation layer made of PET-fiber felt sheet of high density. CONSTITUTION: A sound-absorbing/insulation material(40) is composed of a sound-absorbing layer(10) made of felt sheet, foamed sheet or PET-fiber felt sheet; and a sound-insulation layer(20) attached to the sound-absorbing layer. The sound-insulation layer is made of PET-fiber felt sheet of high density.
Patent KR-20040041443-A (KR)
Inventor: OH JONG ROK
IPC: F24F13/20
Filed: 2002-11-11
Abstract: PURPOSE: An air conditioner is provided to prevent lowering of an air suction amount while improving the quality of an external appearance. CONSTITUTION: A case(10) has a main suction port(14) and auxiliary suction ports(15) forming an external appearance and sucking air in. The main suction port is formed on a top side of the case, and the auxiliary suction ports are formed on a front surface of the case. An opening and shutting member(20) is installed to cover the auxiliary suction ports, wherein a lower end of the opening and shutting member is rotatively installed at the case. The opening and shutting member opens and shuts the auxiliary suction ports, rotating according to a necessary air suction amount. An opening and shutting device(30) makes the opening and shutting member rotate centering around the lower end thereof.
Patent KR-20020097110-A (KR)
Inventor: LEE JEONG MIN
IPC: B65D33/38
Filed: 2002-11-15
Abstract: PURPOSE: A pouch having improved shape retention function in which two or more shape retention means are heat sealed with the inside surface thereof or fabricated therein is provided which can maintain the shape thereof even when a content thereof is throughly discharged out. CONSTITUTION: A spout(200) for absorbing and discharging a content is attached to an upper corner part of an envelop body(100) with a film structure of at least one fold. The envelop is extended to form a specified space and then two or more shape retention means(210) are attached to the inside of the envelop.
Patent KR-20040045785-A (KR)
Title: Wavelength stabilized light emitting apparatus
Inventor: PARK IL JONG
IPC: G02B6/293
Filed: 2002-11-25
Abstract: PURPOSE: A light emitting device for stabilizing a wavelength is provided to output a signal beam of a constant wavelength by feeding back a variation of wavelength of the signal beam to control a driving state of a light source. CONSTITUTION: A light emitting device for stabilizing a wavelength includes a light emitting unit(10) for outputting a signal beam according to the driving current and a wavelength stabilization unit(20) for reflecting the signal beam and comparing a center wavelength of the reflected signal beam to a reference wavelength to control the driving current. The light emitting unit includes a light source(11) for outputting the signal beam, a driver(13) for driving the light source according to the driving current, and an isolator(12) for transmitting the signal beam from the light source and interrupting the signal beam to the light source. The wavelength stabilization unit includes a circulator(21) for circulating the signal beam, an optical fiber grating(22) for reflecting the signal beam in a particular band, a beam splitter(23) for splitting the signal beam reflected by the optical fiber grating, and a comparator(24) for comparing a center wavelength of the reflected beam to the reference wavelength to control the driving current. The light emitting device for stabilizing the wavelength further includes an amplifier unit(30) for amplifying the signal beam of the wavelength stabilization unit.
Patent KR-20040046696-A (KR)
Inventor: MAENG JONG SEON
IPC: H01L21/66
Filed: 2002-11-28
Abstract: PURPOSE: A method for measuring stress of a semiconductor device is provided to precisely and rapidly measure average stress as well as local stress in every position of a wafer, by measuring the variation of dimension before and after a sacrificial layer is etched, by obtaining the stress in each stress measuring pattern and by displaying the stress of each stress measuring patterns as a contour line. CONSTITUTION: A sacrificial layer and a stress measuring target layer(3) are sequentially deposited on a wafer. The length and width of a line pattern is measured after the stress measuring target layer is etched to form the line pattern. The sacrificial layer is etched according to the type of the stress measuring target layer with the line pattern. The length and width of the line pattern having the stress is measured again. The lengths and widths of the line patterns before and after the sacrificial layer is etched are compared to make a contour map in every position of the entire region of the wafer. The stress in every position of the wafer is measured from the contour map.
Patent KR-20040048033-A (KR)
Title: Cooking apparatus and method thereof
Inventor: BORISEU
IPC: A23L19/00
Filed: 2002-12-02
Abstract: PURPOSE: A cooking apparatus and a method thereof are provided to improve the quality of compote and convenience by cooking compote optimally and automatically through the algorithm. CONSTITUTION: A cooking apparatus comprises a cooking chamber loading dry food and water; a heating unit heating food; and a control unit(202) heating food by outputting the predetermined value from the heating unit, absorbing high temperature moisture to food by reducing output from the heating unit primarily in boiling food, and decreasing the water amount by gradually increasing or decreasing output from the heating unit. The control unit decides cooling time and output of a magnetron(106a) according to cooking data memorized in a storage part(214) to automatically cook compote. The magnetron, a cooling fan(106b) and an air duct are installed in an electric component chamber. Suction air is supplied through the air duct to the cooking chamber, and discharged out of a body through a gas sensor(112).
Patent KR-20040048758-A (KR)
Inventor: BAE DONG HO
IPC: C05F11/08
Filed: 2002-12-04
Abstract: PURPOSE: Provided is a method for producing a fertilizer(compost) by fermenting organic wastes(food+animal wastes) by using coco peat, molasses(CMS), and charcoal, which removes a smell and microorganisms, keeps nourishment of the soil for a long time, and increases water keepability of the soil, a fertilizer keepability, etc. CONSTITUTION: The method comprises the steps of: mixing a water controller like the coco peat and enough fermenting microorganisms; mixing the mixture with the wastes and controlling to have the proper moisture content rate and then stacking; stirring the stacked wastes from time to time and blowing air by force to increase the temperature of the waste stack rapidly; removing moisture from the waste stack after finishing the fermentation and dropping the temperature of the waste stack.
Patent KR-20040049198-A (KR)
Title: Evaluation method of gettering ability of silicon wafer
Inventor: KIM YEONG HUN
IPC: H01L21/02
Filed: 2002-12-05
Abstract: PURPOSE: A method of evaluating the gettering ability of silicon wafer is provided to be capable of swiftly carrying out an evaluating process at a low cost. CONSTITUTION: A silicon wafer is prepared(P). A copper contamination solution is partially dripped to the backside of the silicon wafer(S1). The copper contamination solution of the silicon wafer is dried at the temperature of about 100 °C(S2). The copper ions of the dried copper contamination solution are diffused into the silicon wafer by carrying out a heat treatment at the temperature of 700-1000 °C(S3). The first gettering ability evaluating process is carried out by observing the front side of the silicon wafer using naked eyes(S4). A local etching process is carried out on the front side of the silicon wafer(S5). The second gettering ability evaluating process is carried out by analyzing the concentration of a mixed acid solution used for the local etching process(S6).
Patent KR-20040049969-A (KR)
Title: Method for forming a metal line in semiconductor device
Inventor: YOO CHUN GEUN
IPC: H01L21/28
Filed: 2002-12-06
Abstract: PURPOSE: A method for forming a metal interconnection of a semiconductor device is provided to guarantee mechanical strength of a metal interconnection structure while reducing a dielectric constant between metal interconnections and reduce an RC delay of the metal interconnection by forming an air gap between the metal interconnections and by forming a capping oxide layer on the air gap. CONSTITUTION: A predetermined structure layer is formed on a semiconductor substrate(102). A metal interconnection pattern dense area and a metal interconnection pattern rare area are defined in the semiconductor substrate. An interlayer dielectric(106) is deposited on the resultant structure. The interlayer dielectric in the metal interconnection pattern dense and rare areas is patterned to form a plurality of metal interconnections in each area wherein the interval between the metal interconnections is smaller in the metal interconnection pattern dense area than in the metal interconnection pattern rare area. An etch process is performed by using an etch mask where the metal interconnection pattern dense area is open. The interlayer dielectric deposited between the metal interconnections of the metal interconnection pattern dense area is eliminated from a hole. A silane oxide layer is deposited on the resultant structure including the hole wherein the air gap(114) is formed in the hole of the metal interconnection pattern dense area.
Patent KR-20040052329-A (KR)
Title: Method of manufacturing capacitor for semiconductor device
Inventor: JANG HEON YONG
IPC: H01L27/108
Filed: 2002-12-16
Abstract: PURPOSE: A method for manufacturing a capacitor of a semiconductor device is provided to reduce leakage current by enhancing space margin between a plate electrode and a contact of a peripheral region. CONSTITUTION: Bit lines(11) are formed on a cell region(R1) and a peripheral region(R2) of a substrate(10). Storage node contacts(15) are formed at both sides of the bit line of the cell region. A capacitor oxide layer(17) is formed on the resultant structure. A capacitor hole is formed to expose the storage node contacts by selectively etching the capacitor oxide layer. Isolated storage node electrodes(19) are formed on the capacitor hole. The capacitor oxide layer is selectively etched to open a plate forming region. A dielectric film(21) is formed on the resultant structure. A plate electrode(20) is formed on the dielectric film. The plate electrode and the dielectric film on the peripheral region are removed.
Patent KR-20040053585-A (KR)
Title: Mask Inspector System
Inventor: KIM YONG HWAN
IPC: G02F1/13
Filed: 2002-12-17
Abstract: PURPOSE: A mask inspecting apparatus is provided to easily detect defects on the top and bottom faces of a mask and remove the defects. CONSTITUTION: A mask inspecting apparatus includes a rotatable table(40) on which a mask is fixed, a lighting device(20) for irradiating light to the mask fixed to the table, a lighting device frame(30) for supporting the lighting device, and a rotating part(50) connected to the table. The apparatus further includes a cabinet(60) and a defect removing device(70). The cabinet is arranged under the lighting device frame and the rotating part and includes a rotating axis(61) of the rotating part and an axis supporting base(62). The defect removing device is detachably attached to the cabinet and removes a defect generated on the mask.
Patent KR-20040054272-A (KR)
Title: Method of manufacturing piping steel of a ship with a good seawater resistive property
Inventor: JUNG HWAN GYO
IPC: C21D8/10
Filed: 2002-12-18
Abstract: PURPOSE: A method for manufacturing strip for steel pipes in the hull having superior seawater resistive property by adding W to the strip so that the strip obtains sufficient corrosion resistance even in flowing seawater is provided. CONSTITUTION: The method comprises the steps of preparing a steel slab comprising 0.1 wt.% or less of C, 0.3 wt.% or less of Si, 1.2 wt.% or less of Mn, 0.05 wt.% or less of P, 0.035 wt.% or less of S, 0.03 wt.% or less of Al, 0.8 to 1.5 wt.% of Cr, 0.2 to 0.5 wt.% of W and a balance of Fe; reheating the steel slab at a temperature of 1,200 deg.C or less; rolling the reheated steel slab to a rolling finishing temperature of Ar3 (an initiation temperature at which the strip is transformed from austenite to ferrite during cooling of strip at high temperature); and air cooling the rolled strip to an ordinary temperature, wherein the steel slab comprises 0.079 to 0.080 wt.% of C, 0.245 to 0.250 wt.% of Si, 0.895 to 0.901 wt.% of Mn, 0.014 to 0.015 wt.% of P, 0.004 wt.% of S, 0.025 to 0.030 wt.% of Al, 0.980 to 0.989 wt.% of Cr, 0.197 to 0.390 wt.% of W and a balance of Fe.
Patent KR-20040056194-A (KR)
Title: Dust collector of movement type to change filter
Inventor: SUH HYUN SUK
IPC: B01D46/00
Filed: 2002-12-23
Abstract: PURPOSE: Provided is a movable dust collecting device which easily changes a filter and attaches and detaches the filter. CONSTITUTION: The device comprises a main body having a partitioning plate(13) to partition the inner part and an opening and closing door having an engaging part on the outer part rear side, a dust removing chamber(2) where an inlet(20) connected to an induction pipe(11) is formed on one side upper part partitioned by the partitioning plate, one side of a supporting body(21) is fixed on a path(12) and a bolt(22) is fixed to the other side of the supporting body, a cylindrical filter(23) where a cover plate(14) having a bolt hole(140) on the center is fixed on the toe part, a nut(4) engaged to the bolt to fix the filter on the supporting body and an inlet fan built-in chamber(3) comprising a plurality of discharge holes(30) on the other side upper part partitioned by the partitioning plate, a partitioning plate(35), a soundproof pad(31), a motor(32), an inlet fan(33) and an outlet(34).
Patent KR-20040057493-A (KR)
Inventor: KIM JUN GWAN
IPC: H01L21/24
Filed: 2002-12-26
Abstract: PURPOSE: A method for manufacturing a semiconductor device having a polycide structure is provided to effectively remove a native oxide layer on a polysilicon layer before the process for forming a metal silicide layer by using predetermined etching gas. CONSTITUTION: A polysilicon layer(20) doped with impurities is formed on a semiconductor substrate(10). At this time, a native oxide layer is formed on the polysilicon layer. The native oxide layer is removed by carrying out a dry etching process using predetermined etching gas(30). A metal silicide layer is formed on the polysilicon layer. NF3 gas is used as the predetermined etching gas. The removing process of the native oxide layer and the forming process of the metal silicide layer are carried out in the same chamber by in-situ.
Patent KR-20040057828-A (KR)
Title: Method for fabricating cell gate of semiconductor memory device
Inventor: LEE JUNG GYU
IPC: H01L27/112
Filed: 2002-12-26
Abstract: PURPOSE: A method for forming a cell gate of a semiconductor memory device is provided to improve process margin by easily detecting an etch end point in OTP(One Time Programmable) process. CONSTITUTION: A gate oxide layer(22) is formed on a semiconductor substrate(21). The first doped polysilicon layer and an IPD(Inter Poly Dielectric) film are sequentially formed on the gate oxide layer. By patterning the stacked layers, a floating gate(23) and a dielectric film(24) of ONON structure are formed on the gate oxide layer. A dummy oxide layer(25) is formed on the resultant structure. A gate insulating layer is formed on a logic region. A cell gate(26) is formed by depositing the second doped polysilicon layer on the gate insulating layer and selectively etching. Then, a gate electrode is formed on the logic region and a high-voltage device region.
Patent KR-20040059957-A (KR)
Title: Method for fabricating MOS transistor
Inventor: LEE SANG DON
IPC: H01L21/336
Filed: 2002-12-30
Abstract: PURPOSE: A method for manufacturing an MOS transistor is provided to improve short channel effect and to reduce GIDL(Gate Induced Drain Leakage) current by exactly controlling well and channel doping. CONSTITUTION: The trench is formed in an isolation region of a substrate(21). An isolation layer(24) is filled in the trench. The second trench is formed in an active region. A channel region(27) is formed at the bottom of the second trench by channel doping. A gate oxide layer(28) is grown on the channel region. A gate polysilicon layer(29) is deposited on the gate oxide layer and planarized to expose the isolation layer. A WN barrier(30), a tungsten film(31) and a nitride layer(32) are sequentially formed and patterned, thereby forming a gate electrode pattern. A nitride spacer is formed at both sidewalls of the gate electrode pattern. A selective oxide layer is grown at the side of the gate polysilicon layer and on the substrate of the gate region by selective oxidation processing.