baber/WOPTO huggingface dataset:
Patent TW-374158-B (TW)
Title: A record carrier and method of labelling an article of value
Inventor: GREEN IAN MACDONALD
IPC: G06K19/12
Filed: 1997-11-19
Granted: 1999-11-11
Abstract: A record carrier (1) has a secure first data storage means (2) storing a plurality of different identification numbers (12, 13, 14) in a sequence and a further data storage means (3) storing a further number. The identification numbers comprise successive integers, and the further number comprises the least significant digit of one of the said integers. The secure data storage means preferably comprises permanently structured magnetic tape. The further number is derivable in a predetermined way from only one of the identification numbers, thus identifying uniquely which one of the identification numbers is characteristic of the record carrier.
Patent TW-527190-B (TW)
Title: Pharmaceutical composition for treating acute renal failure caused by rhabdomyolysis, and for treating myoglobinuria
Inventor: KUDO IKUE
IPC: A61P13/12
Filed: 1998-03-13
Granted: 2003-04-11
Abstract: The present invention provides a pharmaceutical composition for treating acute renal failure caused by rhabdomyolysis comprising an effective amount of HGF. The present invention provides a method of treating acute renal failure caused by rhabdomyolysis comprising administering an effective amount of HGF to a patient in need thereof.
Patent TW-375731-B (TW)
Title: Method and apparatus for reducing color space signal conversion in the look-up table
Inventor: HSU JUNG-FU
IPC: G09G5/06
Filed: 1998-04-03
Granted: 1999-12-01
Abstract: The invention provides a method and apparatus for reducing the color space signal conversion in the look-up table which generates at least two color-difference signals, where each color-difference signal is associated with any two digitized RGB color space signals, and executes multiplication operation of the first, second, third and fourth matrix of color-difference signal. The first and second matrix multiplication operations have a first and a second result to be used in digitized Y color space signal conversion. The third matrix multiplication operation possesses a third result to be used in the digitized Cb color space signal conversion. The fourth matrix multiplication operation possesses a fourth result to be used in the digitized Cr color space signal conversion. One of the first and the second matrix multiplication operations and one of the third and fourth matrix multiplication operations can join together to form a single look-up table unit and be realized. As such, the unit number of look-up table for matrix multiplication operation can be reduced, which simplifies the volume of the look-up table, so as to achieve the effect of economic hardware, while maintaining high operational efficiency.
Patent TW-411655-B (TW)
Title: Stator structure of resolver
Inventor: OHSHITA HIROMI
IPC: H02K3/52
Filed: 1998-04-07
Granted: 2000-11-11
Abstract: In a stator structure of a resolver, an extended insulating portion (10) formed integrally with an insulation member (4) is provided with pins (11), stator windings (5) are connected to the pins (11) and a lead wire (7) or a connector (6) is connected to the pins (11). The above arrangement permits the automatic assembly, cost reduction and improvement of productivity of the stator structure as well as the prevention of deterioration of the output characteristics of the resolver which has been conventionally occurred.
Patent TW-402841-B (TW)
Title: Complementary MOS semiconductor circuit
Inventor: TOMOBE KOICHI
IPC: H03K19/003
Filed: 1998-04-10
Granted: 2000-08-21
Abstract: A complementary metal oxide semiconductor (CMOS) noise deleting circuit, which is to connect a plurity of PMOS transistor tube or NMOS  transistor tube in series. Since the switching speed or switching period of the PMOS transistor tube or NMOS transistor tube in series differs, the noise-tolerance performance of the semiconductor integrated circuit will be improved.
Patent TW-482694-B (TW)
Title: Product having low temperature curing type highly active oxide photocatalyst film
Inventor: KAWAGUCHI TAKAO
IPC: B01D21/06
Filed: 1998-04-27
Granted: 2002-04-11
Abstract: To manufacture a product of antibacterial effect, antifouling effect and deodorizing effect for example on the surface of a plastic or a coating material by forming an oxide photocatalyst film on the surface of a part in an air flow path and adding specified ions in the oxide photocatalyst film. Ions of elements (Na, Li, K, Mg, Co, Sr, Zn, etc.) of electronegativity of less than 1.6, the ion radius of 0.12 nm or less and oxide particles mainly comprising metal elements with an electron affinity of more than 1.2 (tin oxide of antimony) are added in an oxide photocatalyst film in which TiO2 particles as an oxide photocatalyst are dispersed.
Patent TW-466132-B (TW)
Title: Stirring machine structural device
Inventor: LIAU SHU-HUNG
IPC: B28C5/08
Filed: 1998-06-02
Granted: 2001-12-01
Abstract: This invention is related to a stirring machine structural device, characterized in that the structure includes a driving device, a rotary blade, and a stirring bin, wherein the driving device is independent of the rotary blade so as to improve its efficiency.
Patent TW-401650-B (TW)
Title: Piezoelectric actuator
Inventor: WATANABE CHIHARU
IPC: D03C13/00
Filed: 1998-08-27
Granted: 2000-08-11
Abstract: Disclosed is a piezoelectric actuator for a textile machine having no problem of depolarization, which comprises a plurality of piezoelectric ceramic layers stacked, in which charging of electric charges by application of voltage to one of said plurality of piezoelectric ceramic layers and discharging thereof are alternately repeated by switching operation according to a switching element.
Patent TW-408473-B (TW)
Title: Method for fabricating semiconductor nanocrystal and semiconductor memory device using the semiconductor nanocrystal
Inventor: UEDA TOHRU
IPC: H01L29/792
Filed: 1998-09-30
Granted: 2000-10-11
Abstract: There are provided a method for fabricating semiconductor nanocrystals which are highly controllable and less variable in density and size, as well as a semiconductor memory device which, with the use of the semiconductor nanocrystals, allows thickness of a insulating film between nanocrystals and channel region to be easily controlled and involves less variations in characteristics such as threshold and programming performance, and which is fast reprogrammable and has nonvolatility. Under a low pressure below atmospheric pressure, an amorphous silicon thin film 3 is deposited on a tunnel insulating film 2 formed on a silicon substrate 1. After the deposition of the amorphous silicon thin film 3, the amorphous silicon thin film 3 is heat treated at a temperature not lower than the deposition temperature of the amorphous silicon thin film 3 in an atmosphere of helium gas having no oxidizability, by which a plurality of spherical nanocrystals 4 with a diameter of 18 nm or less are formed on the tunnel insulating film 2 so as to be spaced from one another. The plurality of nanocrystals 4 are used as the floating gate of a semiconductor memory device.
Patent TW-413631-B (TW)
Title: Absorbent article
Inventor: WIDLUND URBAN
IPC: A61F5/44
Filed: 1998-12-03
Granted: 2000-12-01
Abstract: Absorbent article such as a diaper, pant diaper, incontinence guard, sanitary napkin, wound dressing or the like comprising a layer of continuous fibers (9), so called tow, which is bonded in points, spots or lines in a bonding pattern (10), but where the fibers otherwise are substantially unbonded to each other. Said layer can either be used as a liquid acquisition layer (5) in the article under the topsheet (2), as a topsheet (12) or as a combined topsheet and liquid acquisition layer (22).
Patent TW-565548-B (TW)
Title: Process for preparing sparingly soluble aromatic amines
Inventor: LAMATSCH BERND
IPC: C07D235/26
Filed: 1998-12-24
Granted: 2003-12-11
Abstract: Preparation of sparingly soluble aromatic amines by catalytic hydrogenation of the corresponding aromatic nitro compounds in the presence of hydrogen, a solvent and a catalyst having a particle size of not less 0.5 mm, wherein the aromatic nitro compound selected is a compound whose corresponding amine is soluble to an extent of not more than 50% by weight in the solvent used under the reaction conditions of the hydrogenation, and also their use for preparing azo compounds.
Patent TW-533305-B (TW)
Title: Electro-chemical type gas detector
Inventor: TAU DE-HE
IPC: G01N27/30
Filed: 1998-12-30
Granted: 2003-05-21
Abstract: This invention discloses an electro-chemical type gas detector, which in principle comprises: a sensor end cap; an electro-chemical tank body; an auxiliary end cap; and those sequentially clamped between the sensor end cap and the electro-chemical tank body, including a gas-permeable Teflon film and a conductive circular plate; a sensor electrode made from sintering catalyst on a porous carbon paper with good electrical conductivity; a silicon rubber spacer; a silicon rubber spacer symmetrically clamped between the electro-chemical tank body and the auxiliary end cap; an auxiliary electrode made from sintering catalyst on a porous carbon paper with good electrical conductivity; a conductive circular plate and a gas-permeable Teflon. Through such a structure, an electrode surface opposite to the electrolyte solution is used to connect a electrical wire so that the danger of direct contact between the electrical wire and the electrolyte solution is avoided and the structure and assembly of the sensor can be therefore simplified.
Patent TW-419670-B (TW)
Title: Semiconductor memory with column gates and method of controlling column gates
Inventor: AIKAWA TADAO
IPC: G11C7/10
Filed: 1999-03-24
Granted: 2001-01-21
Abstract: A semiconductor memory has pairs of bit lines connected to its memory cells. Sense amps are connected across the bit line pairs. Column gate pairs are connected to the bit line pairs, and data bus pairs are connected to the bit line pairs via the column gate pairs. A column gate drive control circuit is connected to the column gate pairs and turns selected column gate pairs off during a write mask operation.
Patent TW-425572-B (TW)
Title: Semiconductor memory device with true/complement redundancy scheme
Inventor: JUNG CHUL-MIN
IPC: G11C29/04
Filed: 1999-05-28
Granted: 2001-03-11
Abstract: Disclosed is a semiconductor memory device which comprises a redundancy controller. The redundancy controller is structured using pass gate logics and dynamic invertor circuits and true/complement decoder scheme. According to the structure of the redundancy controller, a redundancy speed can be improved.
Patent TW-416136-B (TW)
Title: DRAM capacitor strap
Inventor: BRONNER GARY B
IPC: H01L21/8242
Filed: 1999-06-22
Granted: 2000-12-21
Abstract: A method of forming a trench capacitor comprises steps of forming a trench in a substrate, partially filling the trench with a first conductive material, lining a portion of the trench above the first conductive material with a collar material, etching the collar material to a strap depth below a top of the trench, and filling the trench with a second conductive material, wherein a portion of the second conductive material positioned between the strap depth and the top of the trench comprises a buried strap.
Patent TW-460442-B (TW)
Title: Unsaturated oligophenol cyanates
Inventor: DAUM ULRICH
IPC: C08F290/14
Filed: 1999-08-16
Granted: 2001-10-21
Abstract: A description is given of unsaturated oligophenol cyanates of the general formula [A-]n[B-A-]xB[-A]m. In this formula, A is in each case a group of the formula and B is in each case a group of the formula, in which R1, R2 and R3 are in each case hydrogen or a bond to a group B and there are either one or two bonds to B, and both R4 and R4' and also R5 and R5' in each case are either together a direct bond or hydrogen and a bond to a group A, there being present either one or two bonds to A. The indices m and n are 0 or 1, but not both at the same time 1, and x is an integer from 0 to 10, with at least one of the numbers m, n and x being other than 0. The unsaturated oligophenol cyanates can be prepared by reacting the corresponding oligophenols with cyanogen chloride. They are of low viscosity and owing to the double bonds present can be subjected to free-radical curing. They are particularly suitable as a matrix material for fibre-reinforced composites and for radiation-curable lacquers and coatings.
Patent TW-423140-B (TW)
Title: High-performance dual-damascene interconnect structures
Inventor: ZHAO BIN NMI
IPC: H01L23/522
Filed: 1999-10-07
Granted: 2001-02-21
Abstract: Dual damascene methods and structures are provided for IC interconnects which use a dual-damascene process incorporating a low-k dielectric material, high conductivity metal, and an improved hard mask scheme. A pair of hard masks are employed: a silicon dioxide layer and a silicon nitride layer, wherein the silicon dioxide layer acts to protect the silicon nitride layer during dual damascene etch processing, but is subsequently sacrificed during CMP, allowing the silicon nitride layer to act as a the CMP hard mask. In this way, delamination of the low-k material is prevented, and any copper-contaminated silicon dioxide material is removed.
Patent TW-448476-B (TW)
Title: Processing apparatus having integrated pumping system
Inventor: REIMER PETER
IPC: B01J3/02
Filed: 1999-12-14
Granted: 2001-08-01
Abstract: An apparatus 115 for processing a substrate 20, comprises an integrated pumping system 155 having a high operating efficiency, small size, and low vibrational and noise levels. The apparatus 115 comprises a chamber, such as a load-lock chamber 110, transfer chamber 115, or process chamber 120. An integrated and local pump 165 is abutting or adjacent to one of the chambers 110, 115, 120 for evacuating gas from the chambers. The pump has an inlet 170 connected to a chamber 110, 115, 120, and an outlet 175 that exhausts the gas to atmospheric pressure. Preferably, the pump 165 comprises a pre-vacuum pump or a low vacuum pump.
Patent TW-457459-B (TW)
Title: Method for deciding hiding positions of overlap objects in 2D computer images
Inventor: WEN SAY-YEE
IPC: G06T11/00
Filed: 1999-12-16
Granted: 2001-10-01
Abstract: This invention is a method for deciding hiding positions of overlap objects in 2D computer images for presenting 3D effects in 2D computer image environments. It abstracts the image object in 2D images to be an index message which presents the coordinate value of the image object in the 2D coordinate system, uses the index message to present a probable outline, and then proceeds sorting from far to near according to the index message and the distance of 3D observation point. Then draws every image object into the 2D image in orders and decides the order of adjacent and hiding image object by the method that new drawing image objects cover drawn image objects.
Patent TW-538137-B (TW)
Title: Method of etching indium tin oxide
Inventor: KUMAR AJAY
IPC: H01L31/18
Filed: 2000-03-10
Granted: 2003-06-21
Abstract: The present invention is a method for hydrogen-free etching of indium tin oxide using a plasma generated from an etchant gas containing chlorine as a major constituent (i.e., chlorine comprising at least 20 atomic %, preferably at least 50 atomic %, of the etchant gas). Etching is performed at a substrate temperature of 100 DEG C or lower. The chlorine-comprising gas preferably Cl2. The etchant gas may further comprise a non-reactive gas, which is used to provide ion bombardment of the surface being etched, and which is preferably argon. The present invention provides a clean, fast method for plasma etching indium tin oxide. The method of the invention is particularly useful for etching a semiconductor device film stack which includes at least one layer of a material that would be adversely affected by exposure to hydrogen, such as N- or P-doped silicon.
Patent TW-434741-B (TW)
Title: Planarization method of dielectric layer
Inventor: JANG DING-JANG
IPC: H01L21/31
Filed: 2000-03-20
Granted: 2001-05-16
Abstract: A planarization method of dielectric layer comprises: forming a dielectric layer on a substrate, performing a chemical mechanical polishing process to the dielectric layer, and then performing a plasma process. Since the atoms, free groups, and ions will bond with the broken bonds on the surface of the dielectric layer, the activity of the surface of the dielectric layer can be reduced. This could thereby effectively recover the dielectric performance of the dielectric layer degraded by the chemical mechanical polishing process.
Patent TW-447052-B (TW)
Title: Method for recognizing minute work piece and pickup apparatus using the same
Inventor: NAKANO HARUYUKI
IPC: G06T7/00
Filed: 2000-03-30
Granted: 2001-07-21
Abstract: The scanning region of the second and the following wafer image recognition can be determined based on the image recognition result of the first wafer. For example, in the outlook inspection procedure of semiconductor pellets, scan the first region for the image recognition for the second and the following wafers to decide the contour after excluding the non-shaped pellets in the regional scanning afterwards; wherein the profile afterwards is called a polygon. This manner can reduce the second scanning region and the scanning region of wafers followed, therefore unnecessary scanning regions are eliminated, and time, costs spent can be saved.
Patent TW-470906-B (TW)
Title: Data entry apparatus having a limited number of character keys and method
Inventor: NOWLAN STEVEN
IPC: H04M1/72436
Filed: 2000-04-21
Granted: 2002-01-01
Abstract: A data entry apparatus (10) receives a first character key from a keypad (12). A set of characters associated with the first character key is displayed. A second character key from the keypad (12) is received, wherein a second set of characters is associated with the second character key. A character from the first set of characters is combined with a character from the second set of characters. A set of alternative n-grams is displayed, derived from the step of combining, in descending order based on a probability of frequency of use in a given language. When an alternative n-gram is detected as being actively highlighted, the n-gram is locked to create a locked n-gram and characters associated with subsequent character keys vary in their combinations with respect to the locked n-gram.
Patent TW-508301-B (TW)
Title: Method of displaying images with a touchpanel for a molded form-take out robot
Inventor: YAMAMOTO KOJI
IPC: G05B19/409
Filed: 2000-04-25
Granted: 2002-11-01
Abstract: The invention provides a method of displaying images with a touchpanel for a molded form-take out robot wherein three-dimensional images of robot corresponding to the setting patterns of the molded form-take out robot and the set positions of the touchpanel type image-display device are shown, so that operators can perform the teaching operation without misunderstanding the orientation of the robot's images and the actual robot, thereby surely avoiding an incorrect teaching operation. The touchpanel type images-displaying method for molded form-take out robot shows on the image-display device the three-dimensional images of the Operator-side robot corresponding to the robot setting patterns and the set positions of the image-display device.
Patent TW-476037-B (TW)
Title: Network consumption system and method
Inventor: CHEN CHIH-MIN
IPC: G06F17/30
Filed: 2000-05-17
Granted: 2002-02-11
Abstract: It is a network consumption method and system that provides multiple consumption actions for users to select at the same time and displays results of consumption actions that users select in a default form for users. Then, it records selected consumption actions again as paid consumption actions to make users proceed paid consumption actions without paying again.
Patent TW-541197-B (TW)
Title: Filtration device with staged pleating
Inventor: MUZIK TOM
IPC: B01D46/52
Filed: 2000-06-15
Granted: 2003-07-11
Abstract: An enhanced flow ratio is achieved with a novel staged pleating arrangement whereby a variable pleat height ratio and number of pleats determines the respective staging configuration which is used for each desired application of the instant teachings. Relative to known pleat geometries, a higher flow rate is achieved according to the teachings of the present invention.
Patent TW-I280880-B (TW)
Title: Medicament with a protective effect against oxidative-toxic substances, particularly against cardiotoxic substances
Inventor: ROZSA SUSANNA
IPC: A61K31/55
Filed: 2000-07-05
Granted: 2007-05-11
Abstract: The invention relates to the utilization of benzazepine-N-acetic acid derivatives which contain an oxogroup in addition to the nitrogen atom in the alpha position and which are substituted in the third position by a 1-(carboxyalkyl)-cyclopentyl-carbonyl-amino radical and to their salts and biolabile esters for the prophylaxis and/or treatment of heart damages caused by cardiotoxic doses of medicaments or chemicals in large mammals and particularly human beings. The invention particularly relates to the prophylaxis and/or treatment of heart damages, especially myocardial damages, which may occur during cytostatic chemotherapy. The invention further relates to the utilization of the above-mentioned benzazepine-N-acetic acid derivatives for adjuvant treatment in therapies in which medicaments with oxidative-toxic side effects are used. The invention additionally relates to the production of medicaments suitable for said prophylaxis and/or treatment or adjuvant treatment.
Patent TW-461093-B (TW)
Title: Fabrication method for a high voltage electrical erasable programmable read only memory device
Inventor: JAN YI-PENG
IPC: H01L21/8247
Filed: 2000-07-07
Granted: 2001-10-21
Abstract: A fabrication method for a high voltage electrically erasable read only memory is described, wherein a substrate comprising a memory device region and a peripheral circuit region is provided. A floating gate is formed on the substrate in the memory device region, while a gate electrode is formed on the substrate in the peripheral high-voltage circuit region. Thereafter, an oxide/nitride/oxide layer is formed on the substrate, wherein the oxide/nitride/oxide layer is formed by stacking from bottom to top a first oxide layer, a nitride layer and a second oxide layer. The second oxide layer in the peripheral high voltage circuit region is then removed, followed by removing the nitride layer in the peripheral high voltage circuit region. An oxidation on the second oxide layer and a double diffused drain ion implantation are conducted to form a bird's beak structure at the bottom corner of the gate electrode and to form a double diffused drain structure in the substrate on both sides of the gate electrode. A control gate is then formed on the oxide/nitride/oxide layer of the device region and a gate electrode is formed in the peripheral low voltage circuit region. Subsequently, a source/drain region is formed in the substrate on both sides of the gate electrode in the peripheral low voltage circuit region.
Patent TW-478014-B (TW)
Title: Semiconductor device and method of manufacturing thereof
Inventor: SHIBATA HIROSHI
IPC: H04N5/66
Filed: 2000-08-10
Granted: 2002-03-01
Abstract: To provide a liquid crystal display device having high quality display by obtaining a high aperture ratio while securing a sufficient storage capacitor (Cs), and at the same time, by dispersing a load (a pixel writing-in electric current) of a capacitor wiring in a timely manner to effectively reduce the load. A scanning line is formed on a different layer from a gate electrode and the capacitor wiring is arranged so as to be parallel with a signal line. Each pixel is connected to the individually independent capacitor wiring via a dielectric. Therefore, variations in the electric potential of the capacitor wiring caused by a writing-in electric current of a neighboring pixel can be avoided, whereby obtaining satisfactory display images.