baber/WOPTO huggingface dataset:
Patent TW-368624-B (TW)
Title: Method for providing virtual atomicity in multi-processor environment having access to multilevel caches
Inventor: BAYLOR SANDRA JOHNSON
IPC: G06F12/08
Filed: 1997-12-11
Granted: 1999-09-01
Abstract: A method for assuring virtual atomic invalidation in a multilevel cache system wherein lower level cache locations store portions of a line stored at a higher level cache location. Upon receipt of an invalidation signal, the higher level cache location invalidates the line and places a HOLD bit on the invalidation line. Thereafter, the higher level cache sends invalidation signals to all lower level caches which store portions of the invalidated line. Each lower level cache invalidates its portion of the line and sets a HOLD bit on its portion of the line. The HOLD bits are reset after all line portion invalidations have been completed.
Patent TW-349161-B (TW)
Title: A gas cooking stove for cooking the rice and the control method of the same
Inventor: TATEMATSU TETSUO
IPC: F24C3/12
Filed: 1998-01-14
Granted: 1999-01-01
Abstract: A gas cooking stove for cooking the rice, which can be used to heat different types of pots with various pot thickness for cooking the rice, which is characterized in comprising: pot thickness identification means for judging the thickness of the pot under heating according to the time information and the temperature information.
Patent TW-351000-B (TW)
Title: Method of manufacturing damascene interconnection in multi-layer dielectric
Inventor: JANG SHIUN-MING
IPC: H01L21/768
Filed: 1998-02-05
Granted: 1999-01-21
Abstract: A sort of method of manufacturing damascene interconnection in multi-layer dielectric, including the following steps: provision of a semiocnductor substrate, for forming the first layer element conductor; forming in sequence the first dielectric layer, the second dielectric layer and thin coating layer on the semiconductor substrate and on the surface of said first layer element conductor, where the second dielectric has a low-dielectric constant and the anti-corrosion inferior to the first dielectric layer; etching by using a resistron graphic as shade the thin coating layer for defining graphics and exposing the area of the desired built-in conductor; forming a selective etching sequence by using said thin coating layer graphic as hard shade, at an etching pace of said second dielectric and the resistron graphic higher than that of said first dielectric, for etching in said second dielectric the desired built-in conductor cavity and removing the resistron graphic; keeping on etching said first dielectric by using another resistron graphic as shade and forming a contact opening under said built-in conductor cavity; removal of the other resistron graphics; and forming a conductive layer for stuffing the contact opening and the built-in conductor cavity for completing the built-in conductor structure.
Patent TW-386268-B (TW)
Title: Method of avoiding contamination of W particles by using N2 plasma to form W layer
Inventor: JANG LIANG-DUNG
IPC: H01L21/3205
Filed: 1998-02-18
Granted: 2000-04-01
Abstract: The invented method comprises forming a Ti layer on a dielectric layer; using titanium nitride to form  a barrier layer on the Ti layer; annealing the composite by a rapid thermal treatment process; forming a W layer by using a N2 plasma treated CVD. According to a preferred embodiment of the present invention, the N2 plasma treated CVD has a deposition temperature of about 300 to 500 DEG C, a gas pressure of about 2 to 4 Torr, a plasma power of about 300 to 800 Watt, and a N2 plasma treatment time of about 50 to 150 seconds. Finally, an etching process is used to remove a portion of the W layer.
Patent TW-424271-B (TW)
Title: Method to grow self-aligned silicon on a gate, drain and source region
Inventor: CHEN SHU-REN
IPC: H01L21/28
Filed: 1998-02-19
Granted: 2001-03-01
Abstract: The method of the present invention includes forming a silicon-rich metal silicide layer on a gate structure and a substrate by using chemical vapor deposition; applying a thermal process to the substrate to separate the silicon out of the silicon-rich metal silicide so that the silicon is formed above the gate, drain and source as the silicon layer to be reacted with a metal in the subsequent silicide process. A chemical solution is used to remove the silicon-rich metal silicide layer. A polysilicon metal and a salicide are separately formed above the gate, drain and source. According to the present invention, substrate will not be consumed during the silicide formation thereby avoiding the generation of leakage current.
Patent TW-403930-B (TW)
Title: A steel sheet for shadow mask, a shadow mask, a producing method of shadow mask, and a color picture tube
Inventor: IDE TSUNEYUKI
IPC: C22C38/00
Filed: 1998-03-03
Granted: 2000-09-01
Abstract: The object is to provide a steel sheet for a shadow mask, in which press-formability and perforability by etching are improved, a shadow mask made thereof, and a color picture tube incorporating the shadow mask, and to provide a producing method of a shadow mask having the above mentioned characteristics. The object is achieved by using an aluminum killed steel sheet which contains N, Mn, and Cu by the amounts respectively controlled within desired ranges according to the present invention and by carrying out the annealing prior to press-forming under the conditions of annealing atmosphere, a dew point of atmospheric gas, and annealing temperature respectively controlled within desired ranges eliminating the occurrence of stretcher-strain during press forming according to the present invention.
Patent TW-380056-B (TW)
Title: Liquid bleeding device and method for controlling the concentration of the slurry in a wet flue gas desulfurization system
Inventor: TATANI ATSUSHI
IPC: B01D53/50
Filed: 1998-06-15
Granted: 2000-01-21
Abstract: An object of this invention is to provide a simple liquid bleeding device making it possible to bleed out only a liquid component from a slurry within a tank, and a method for controlling the concentration of a slurry in a wet flue gas desulfurization system by using such a device. Specifically, this invention provides a liquid bleeding device for discharging a slurry liquid component having a low solid content from a tank containing a slurry comprising a liquid having solid matter suspended therein, the liquid bleeding device including a liquid bleeder which comprises a slurry outlet member formed in a sidewall of the tank at a position lower than the level of the slurry and which enables the slurry within the tank to flow out under the action of a pressure head difference, and a liquid component induction path whose upper end is connected to the inner side of the outlet member of the liquid bleeder and whose lower end extends toward the bottom of the tank and is left open, the cross-sectional dimension and length of the liquid component induction path being determined so that, when the slurry flows out from the liquid bleeder by way of the liquid component induction path under the action of a pressure head difference, the flow velocity of the liquid component therein is lower than the settling velocity of the solid matter. Moreover, for use in a wet flue gas desulfurization system wherein a slurry containing a calcium compound as an absorbent is fed from an absorption tower tank formed at the bottom of an absorption tower and recirculated through a gas-liquid contact region defined in the upper part of the absorption tower, so that untreated flue gas is brought into contact with the slurry for gas-liquid contact to remove at least sulfur dioxide present in the untreated flue gas by absorption into the slurry, this invention also provides a method for controlling the concentration of the slurry in the wet flue gas desulfurization system which comprises equipping the absorption tower tank with the liquid bleeding device of this invention, and controlling the concentration of the slurry within the absorption tower tank by regulating the amount of liquid component bled out from the absorption tower tank by means of the liquid bleeding device and the amount of liquid component supplied to the absorption tower tank.
Patent TW-494231-B (TW)
Title: Allergen detector system and method
Inventor: HAMBURGER ROBERT N
IPC: G01N15/02
Filed: 1998-08-11
Granted: 2002-07-11
Abstract: A light beam is directed from a light source through an air sample so that portions of the beam will be scattered if any particles are present in the path of the beam. A beam blocking device on the opposite side of the air sample is arranged to block all light except light scattered in a predetermined angular range corresponding to a predetermined allergen particle size range. A light focusing lens in front of the light source is arranged to focus the unscattered part of the light beam onto the blocking device. Light transmitted through the blocking device is detected by a light detector and an alarm output signal is produced if the detected amount of light is above a predetermined level. The signal may be used to activate filtering or air conditioning devices.
Patent TW-460623-B (TW)
Title: Composition and method for stripping solder and tin from printed circuit boards
Inventor: JOHNSON TODD II
IPC: C23F1/30
Filed: 1998-09-14
Granted: 2001-10-21
Abstract: A composition and method for stripping tin and solder and the underlying tin-copper alloy from the copper substrate of a printed circuit board is presented. The liquid includes an aqueous solution of nitric acid in an amount sufficient to dissolve solder and tin, a source of ferric ions in an amount sufficient to dissolve the tin-copper alloy, and a source of halide ions in an amount sufficient to significantly improve the resistance between printed circuits.
Patent TW-406042-B (TW)
Title: Formation process of solid stone board
Inventor: LAI YING-JOU
IPC: B28B7/24
Filed: 1998-11-26
Granted: 2000-09-21
Abstract: This invention provides the formation process of the solid stone board, especially relates to the stone board used in flooring and wall laying construction. The formation process of the stone board is laying of fine sand first and placing a frame upon the sand. Arranging a plurality of stone in the frame evenly and pouring water based glue into the gap of stone until the glue reaching one half height of the frame. Waiting for half cure of the glue and drawing out the stone which are not stick by the glue, and pressurize the stone to consolidate the stone by a sack to increase the density. Lapping another frame upon the existing frame, and filling the grout upon the stone until the grout reaches the top of the frame set. After board being solidified, removing the frame set and flushing the fine sand and the water based cement away by strong water stream and resulting in stone compound material in solid convex stone and could used conveniently in laying construction.
Patent TW-396433-B (TW)
Title: A multi-exposure process that raises microlithography margin
Inventor: SHIAU GUO-YU
IPC: H01L21/30
Filed: 1998-11-27
Granted: 2000-07-01
Abstract: This is a method of forming patterns on the semiconductor substrate. First, patterns are divided into multiple regions according to the characteristics thereof. Second, according to the formed multiple regions, multiple masks are formed. The multiple masks correspond respectively to multiple regions. Then, based on the multiple masks, multiple sets of optimum conditions are set to generate the maximum margin of each region. After that, patterns on the multiple regions are transferred onto semiconductor by using the masks corresponding to each region. During transfers, the optimum process condition corresponding to each region is used to generate the maximum margins of regions.
Patent TW-419700-B (TW)
Title: Method and apparatus for testing a substrate
Inventor: BRUNNER MATTHIAS
IPC: G01Q10/00
Filed: 1998-12-17
Granted: 2001-01-21
Abstract: The invention relates to a method and to apparatus for testing a substrate, in which a particle beam is directed onto the substrate and emitted secondary particles are detected with a detector and then evaluated. According to the invention the location of the secondary particles emitted on the substrate relative to the position of the detector is taken into consideration during testing.
Patent TW-379164-B (TW)
Title: Method of polishing polysilicon
Inventor: LIN JIAN-TING
IPC: H01L21/304
Filed: 1998-12-23
Granted: 2000-01-11
Abstract: A method of polishing polysilicon by first providing a semiconductor substrate having a shallow trench insulation structure formed on it. Then, forming the first conductor layer on the semiconductor substrate and the shallow trench insulation structure. Then the proceed with the chemical mechanical polishing of the first conductor layer, for planarization of the uneven surface of the first conductor layer due to the height difference with the shallow trench insulation structure. Then, forming on the first conductor layer the second conductor layer, for forming an interface between the second conductor layer and the first conductor layer.
Patent TW-404019-B (TW)
Title: The method of removing the bonding pad contact photoresist
Inventor: JUO JING-WEN
IPC: H01L21/768
Filed: 1998-12-30
Granted: 2000-09-01
Abstract: This invention discloses a method of removing the photoresist for manufacturing the bonding pad contact, so as to solve the problem of visual defect produced due to the over-etching on the upper region of the passivation layer and the corrosion of bonding pad in the process of defining the substrate bonding pad contact. First, the photoresist is spun on the semiconductor substrate of the fabricated passivation layer to define the bonding pad contact. Next, after photolithography etching and before removing the photoresist on the passivation layer, the plasma treatment of the oxygen-containing gas is used in order to form a native oxide on the surface of the bonding pad in the bonding pad contact. Next, two-step etch method is used to remove the photoresist. The first stage uses wet etching process to remove quickly and roughly the photoresist. The second stage uses dry etching process to remove the residual photoresist that is not removed in the first stage.
Patent TW-418553-B (TW)
Title: Dielectric resonant apparatus
Inventor: SAKAMOTO KOICHI
IPC: H03B5/18
Filed: 1999-02-20
Granted: 2001-01-11
Abstract: Electrodes are formed on respective two main surfaces of a dielectric sheet wherein each electrode has an opening formed at a location corresponding to the location of the opening formed in the other electrode. The part defined by the openings serves as a dielectric resonator. Coupling lines are formed directly in the electrode opening. Transmission lines are formed on a circuit board. The coupling lines and the corresponding transmission lines are connected to each other via bonding wires. This structure makes it possible to minimize the external Q of a resonant circuit using the dielectric resonator. If an oscillator is produced using this resonant circuit, it is possible to achieve a large frequency modulation with and large output.
Patent TW-417206-B (TW)
Title: Method for reducing thin film stress of the conduction wire damascene
Inventor: LI MEI-YAN
IPC: H01L21/322
Filed: 1999-02-22
Granted: 2001-01-01
Abstract: This invention relates to a method for improving thin film stress of the conduction wire damascene. First, a semiconductor wafer is provided, in which plural device structures of transistors are formed on the wafer. The transistor includes polysilicon gate and the source/drain doped with conduction type of ions. The refractory metal layer is then formed globally on the front side of wafer. The oxide layer on the backside of wafer is stripped before the general formation of inter dielectric layer. Another metal layer is formed on the backside of wafer and followed by thermal process to form the silicide layer on the source/drain and gate of transistor and the backside of wafer. After etching the non-reacted fireproof metal layer on the front side of wafer, the inter dielectric layer is formed globally. The planarization process is then performed. Finally, the metal layer and the other conduction wire damascene process similar to that of conventional method are formed.
Patent TW-404012-B (TW)
Title: Method for fabricating contact of semiconductor device
Inventor: JEONG IN-KWON
IPC: H01L27/108
Filed: 1999-04-23
Granted: 2000-09-01
Abstract: A method for fabrication a contact of a semiconductor memory device comprises the steps of forming a contact hole in an interlayer insulation film until a portion of a semiconductor substrate is exposed, forming a contact plug which is connected to the semiconductor substrate under a contact hole and whose upper surface is lower than that of the interlayer insulation film, forming a first conductive layer on the interlayer insulation film along with a topology of a contact hole so as to connect electrically to a contact plug, forming a second conductive layer on the first conductive layer after the contact hole is filled up with the material layer or a contact spacer is formed on the first conductive layer of both side-walls of the contact hole, sequentially etching the second and first conductive layer by using a contact electrode formation mask to form a contact electrode, thereby preventing severe necking of storage node despite misalignment thereof. Thus, falling-down of the storage node is prevented.
Patent TW-446711-B (TW)
Title: Method of preparing vinyl chloride resin having high impact strength and low die swell
Inventor: KIM KYUNG-HYUN
IPC: C08F2/44
Filed: 1999-04-29
Granted: 2001-07-21
Abstract: A method of preparing vinyl chloride resin is provided. In the method, a first vinyl chloride monomer is mixed with a first initiator to prepare a seed polymer particle and a second vinyl chloride monomer and a second initiator are added to the polymerized seed polymer particle. An organic siloxane polymer is added to the first monomer and/or second monomer. Formula 1, wherein R1 is hydrocarbon having 1 to 12 carbon atoms and substituted with a group selected from the group consisting of hydrogen, alkyl, haloalkyl, aryl, haloaryl, aralkyl, polyether, imino, epoxy and vinyl; R2 is saturated hydrocarbon having 1 to 12 carbon atoms; and n is an integer of 10 to 12,000.
Patent TW-473460-B (TW)
Title: Fluoride including waste water processing device and method capable of processing fluoride including waste water to have low concentration of fluoride
Inventor: WADA YUJI
IPC: C02F1/52
Filed: 1999-07-14
Granted: 2002-01-21
Abstract: In a fluoride including waste water processing device which comprises a reaction vessel and a sedimentation vessel, a calcium compound adding device adds calcium compound in fluoride including waste water in the reaction vessel to react the calcium compound with fluoride of the fluoride including waste water to generate calcium fluoride. The sedimentation vessel has a bottom which is associated with a bottom of the reaction vessel through an opening hole. The fluoride including waste water is sent to the sedimentation vessel from the reaction vessel through the opening hole. The sedimentation vessel has an inclined bottom surface. The calcium fluoride is sent back, by a self-weight of the calcium fluoride, to the reaction vessel from the sedimentation vessel along the inclined bottom surface. An agitator aggregates the fluoride including waste water in the reaction vessel. A polymer solution adding device adds polymer solution in the fluoride including waste water in the reaction vessel. A supernatant liquid draining device drains supernatant liquid of fluoride including waste water from the sedimentation vessel.
Patent TW-449952-B (TW)
Title: Unified motor stator and its forming method
Inventor: TSAI MI-CHING
IPC: H02K1/12
Filed: 1999-09-09
Granted: 2001-08-11
Abstract: This invention is about a kind of unified motor stator and its forming method. A central region with a parallelogram and the pole plate regions extending upwards and downwards from the central region are manufactured in a pressing manner by the plate made of magnetic conductive material. The central region is wound to form the magnetic conductive cylinder, and the pole plate regions are pressed and bent so as to make the pole plate regions perpendicular to the magnetic conductive cylinder such that the upper and the lower pole plates are formed. Therefore, a unified motor stator structure is formed.
Patent TW-415906-B (TW)
Title: Large label panel container carrier
Inventor: OLSEN ROBERT
IPC: B65B17/02
Filed: 1999-09-13
Granted: 2000-12-21
Abstract: The invention relates to a package of a plurality of containers unitized with a flexible carrier. The carrier is constructed from a plastic planar sheet having a plurality of container receiving openings including corner container receiving openings and inner container receiving openings. A panel is positioned with respect to a straight longitudinal panel edge of the container receiving openings. When the containers are inserted into the container receiving openings, the panel remains flat and tight with respect to the containers. The panel is urged into a flat position with respect to the containers through a distinct spatial relationship between and among the container receiving openings.
Patent TW-432543-B (TW)
Title: Method to create a depleted poly MOSFET
Inventor: BROWN JEFFREY S
IPC: H01L21/84
Filed: 1999-09-14
Granted: 2001-05-01
Abstract: A structure and method for forming a semiconductor structure includes forming a plurality of device layers on a substrate (the device layers including a blocking layer having a thickness correlating to a magnitude of implant attenuation), removing the blocking layer from selected devices of the semiconductor, and implanting an impurity into the substrate, the device layers and partially through the blocking layer.
Patent TW-499422-B (TW)
Title: A process for blending petroleum oils to avoid being nearly incompatible
Inventor: WIEHE IRWIN ANDREW
IPC: C10G7/10
Filed: 1999-11-25
Granted: 2002-08-21
Abstract: The present invention includes a process for blending two or more petroleum oils, any component of which may be an unprocessed crude oil or a proceed oil derived from petroleum, in a manner to minimize fouling and coking of refinery process equipment. The blending method includes the steps of determining the insolubility number, I, for each oil, determining the solubility blending number, S, for each oil, and combining the petroleum oils in the proportions in order to keep the solubility blending number of the mixture higher than 1.4 times the insolubility number of any oil in the mixture. The present invention also includes selecting petroleum oils to minimize fouling.
Patent TW-449931-B (TW)
Title: Manufacturing method of P-type semiconductor with a low resistance coefficient
Inventor: TSAI TZUNG-LIANG
IPC: H01L21/00
Filed: 2000-01-27
Granted: 2001-08-11
Abstract: The present invention provides a method for manufacturing P-type semiconductor with a low resistance coefficient on a substrate. The inventive method comprises using a HVPE process, an OMVPE process, or a MBE process to form a P-type doped compound semiconductor layer on the substrate; and performing a microwave treatment to the P-type doped compound semiconductor layer. The method is able to transform P-type compound semiconductor material with a high resistance coefficient into the P-type compound semiconductor material with a low resistance coefficient.