baber/WOPTO huggingface dataset:
Patent TW-402770-B (TW)
Title: Method and apparatus for utilizing mux scan flip-flops to test speed related defects
Inventor: LI HEHCHING HARRY
IPC: G01R31/3185
Filed: 1998-12-11
Granted: 2000-08-21
Abstract: A method and an apparatus utilizing mux scan flip-flops to test for timing-related defects. In one embodiment, a delay circuit is used to act as a buffer for a scan enable signal received by the mux scan flip-flops of a test circuit. The scan mode signal is first sent to the delay circuit, which then distributes the scan mode signal to the mux scan flip-flops. Since each delay circuit can serve as the buffer for numerous mux scan flip-flops, the scan mode signal may be sent initially to a smaller number of delay circuits instead of the thousands of mux scan flip-flops that may be distributed throughout the entire integrated circuit. Furthermore, in one embodiment the delay circuit delays propagation of active-to-inactive transitions of the scan enable signal by one clock cycle, synchronizing the system clock cycle with the active-to-inactive transitions of the scan mode signal. In one embodiment, inactive-to-active transitions of the scan enable signal are propagated without the one clock cycle delay. With the present invention, the mux scan flip-flops may be loaded and unloaded with test data at slower scan clock speeds, and the integrated circuit may be operated at full system clock speeds for as few as two cycles to detect speed-related defects in accordance with the teachings of the present invention.
Patent TW-432004-B (TW)
Title: Device and module for feeding web-like material
Inventor: MIVELAZ DOMINIQUE
IPC: B65H16/02
Filed: 1998-12-24
Granted: 2001-05-01
Abstract: This web feeding device comprises a spindle (11, 12, 13) which is pivotably mounted in a frame (14), connected to a driving motor and longitudinally divided in two sections (11a, 11b; 12a, 12b; 13a, 13b) which are rotatably mounted one with regard to the other. Two drive mechanisms (8, 25; 9, 26; 10, 27) of these two sections (11a, 11b; 12a, 12b; 13a, 13b) are connected to a common end of the spindle (11, 12, 13). The section (11a, 12a, 13a) adjacent to the common end has the form of a tubular element pivoted on a shaft (4, 5, 6). This tubular element is connected to one drive mechanism (25, 26, 27), the end of the shaft (4, 5, 6) adjacent to the common end of the spindle (11, 12, 13) is connected to the other drive mechanism (8, 9, 10), whereas the other end of the shaft (4, 5, 6) is secured to the second section (11b, 12b, 13b).
Patent TW-459024-B (TW)
Title: Aqueous pigment preparations
Inventor: NYSSEN PETER ROGER
IPC: C09D11/322
Filed: 1999-01-15
Granted: 2001-10-11
Abstract: Aqueous pigment preparations comprising (a) 2 to 70% by weight of at least one pigment, based on the preparation, (b) 0.1 to 120% by weight, based on the pigment of component (a), of condensation product based on (A) sulphonated aromatics, (B) aldehydes and/or ketones and optionally (C) one or more compounds selected from the group consisting of unsulphonated aromatics, urea and urea derivatives, (c) 1 to 30% by weight, based on the preparation, of polyetherpolyol having an atmospheric pressure boiling point of greater than 150 DEG C, and (d) 29 to 97% by weight of water, based on the preparation, are highly useful for pigmenting natural or synthetic materials.
Patent TW-424145-B (TW)
Title: Robust, small scale electrical contactor
Inventor: SLOCUM ALEXANDER H
IPC: H05K1/00
Filed: 1999-04-21
Granted: 2001-03-01
Abstract: A contactor for use in testing integrated circuit chips. The contactor is made with an array of V-shaped contact elements. The V-shaped contact elements are nested so that the contact elements can be longer than the pitch of the contact points. In this way, the compliance of the beam portions of the contact elements can be increased. Also, the V-shape is very robust. Further, the V-shape allows ""fly-by"" testing which is very useful at high speeds.
Patent TW-426869-B (TW)
Title: Manufacturing method for three dimensional device
Inventor: INOUE SATOSHI
IPC: H01L27/00
Filed: 1999-02-26
Granted: 2001-03-21
Abstract: A method for making a three-dimensional device of the present invention includes a step for forming a cleaving layer 2, an intermediate layer 3, and a first transferred layer 41 on a translucent substrate 1 and for forming a cleaving layer 2, an intermediate layer 3, and a second transferred layer 42 on a translucent substrate 1, a step for bonding a substrate (transferring-side substrate) 21 to the side away from the substrate 1 of the transferred layer 41 with an adhesive layer 5 provided therebetween, a step for irradiating the cleaving layer 2 with illuminating light 7 so as to form intralayer and/or interfacial cleavage in the cleaving layer by ablation and for detaching the transferred layer 41 from the substrate 1 to transfer the transferred layer 41 onto the substrate 21, a step for bonding the transferred layer 41 to the side away from the substrate 1 of the transferred layer 42 with a conductive adhesive layer 22 provided therebetween, and a step for irradiating the cleaving layer 2 with the illuminating light 7 as above, and for detaching the transferred layer 42 from the substrate 1 to transfer the transferred layer 42 onto the transferred layer 41.
Patent TW-476795-B (TW)
Title: Austenitic stainless steel, especially for making wire
Inventor: HAVETTE ETIENNE
IPC: C22C38/40
Filed: 1999-03-09
Granted: 2002-02-21
Abstract: Austenitic stainless steel for the production of wire, which can be used in the field of drawing wire down to diameters of less than 0.3 mm and in the field of producing components subjected to fatigue, characterized by the following composition by weight: 5x10<SP>-3</SP>% ≤ carbon ≤ 200x10<SP>-3</SP>%; 5x10<SP>-3</SP>% ≤ nitrogen ≤ 400x10<SP>-3</SP>%; 0.2% ≤ manganese ≤ 10%; 12% ≤ chromium ≤ 23%; 0.1% ≤ nickel ≤ 17%; 0.1% ≤ silicon ≤ 2%, in which the residual elements are controlled so as to obtain inclusions of oxides in the form of a glassy mixture, the proportions by weight of which are as follows: 40% ≤ SiO2 ≤ 60%; 5% ≤ MnO ≤ 50%; 1% ≤ CaO ≤ 30%; 0% ≤ MgO ≤ 4%; 5% ≤ Al2O3 ≤ 25%; 0% ≤ Cr2O3 ≤ 4%; 0% ≤ TiO2 ≤ 4%.
Patent TW-422993-B (TW)
Title: Decoded autorefresh mode in a DRAM
Inventor: KIEHL OLIVER
IPC: G11C11/406
Filed: 1999-04-20
Granted: 2001-02-21
Abstract: Dynamic random access memory chips (DRAMs) in a computer memory system are made to be more available for access by a processor even though an autorefresh cycle may be in progress when the processor attempts to access the memory system. A DECODED AUTOREFRESH mode is defined which allows refresh of certain banks of the DRAM only. The bank addresses from the external DRAM controller select the bank where the AUTOREFRESH has to be performed. The DRAM controller circuitry makes sure that every bank of the DRAM gets a refresh command often enough to retain information.
Patent TW-530087-B (TW)
Title: Amphipathic protein-1
Inventor: FENG TENG-YUNG
IPC: C12N15/82
Filed: 1999-03-29
Granted: 2003-05-01
Abstract: This invention relates to amphipathic protein-1 polypeptides and genes encoding them, vectors comprising the genes, and host cells transformed with the vectors. This invention also relates to the uses of the polypeptides and genes in phytoprotection, and in the preparation of transgenic plants.
Patent TW-419725-B (TW)
Title: Method for manufacturing SOI wafer and SOI wafer
Inventor: YOSHIZAWA KATSUO
IPC: H01L21/02
Filed: 1999-06-01
Granted: 2001-01-21
Abstract: The object of the invention is to reduce an outer circumferential edge removing width of the SOI wafer when a bonded SOI wafer is made and prevent deposition of polysilicon at the outer circumference of the SOI layer when an epitaxial layer is grown. An SOI layer is formed by the steps of forming an oxide film on a surface of at least one silicon wafer of two silicon wafers. Bonding the other silicon wafer through said oxide film at a room temperature, the wafers are heat treated in oxidizing atmosphere, thereafter an outer periphery of a bond wafer is removed from an outer peripheral edge of the bond wafer up to a region between bonding ends through bonding at a room temperature and heat treatment bonding ends and making the bond wafer into a thin film of desired thickness.
Patent TW-434945-B (TW)
Title: High density electrical connector with ground bus
Inventor: LEAMAN CHRISTOPHER SCOTT
IPC: H01R13/658
Filed: 1999-06-29
Granted: 2001-05-16
Abstract: A grounding bus comprises: (a) a body section adapted for mounting to an housing of an electrical connector; (b) one or more connectors for mounting the body section to the housing prior to the connection of a conductor to the electrical connector; and (c) at least one grounding member extending from the body section to facilitate an electrical connection between a signal IDC slot on the housing and the ground bus.
Patent TW-565541-B (TW)
Title: Admixture for cement mortar
Inventor: YAMAKAWA TSUTOMU
IPC: C04B24/38
Filed: 1999-07-30
Granted: 2003-12-11
Abstract: This invention is to provide an admixer to thicken a cement mortar with even smaller quantity added at a higher temperature and to improve water retention by gentle blending. This admixture for a cement mortar is characteristically composed of a hydroxyalkylalkylcellulose having 4,000-20,000 mPa.s viscosity at 20 DEG C and 1,500-12,000 mPa.s viscosity at 35 DEG C respectively in terms of 1 wt.% aqueous solution; the hydroxyalkylalkylcellulose is obtained from high molecular weight pulp as a raw material and is preferably prepared to include < 30 wt.% particulate having >= 30 mesh size, and <= 30 wt.% particulate having < 200 mesh size within 10 sec water moistening time.
Patent TW-475238-B (TW)
Title: Semiconductor manufacture process to prevent diffusion of fluorine atom
Inventor: BAU TIAN-YI
IPC: H01L21/768
Filed: 1999-09-30
Granted: 2002-02-01
Abstract: This invention provides semiconductor manufacture process to prevent diffusion of fluorine atom of fluorinated silicate glass, which primarily deposits silicon rich oxide layer above and beneath the fluorinated silicon glass to function as barrier layer. According to the process of the present invention, using silicon rich oxide layer as barrier layer can effectively block the diffusion of fluorine atoms. Therefore, the use of low dielectric constant of fluorinated silicate glass can enhance the device performance by reducing the interconnect parasitic capacitance and RC delay, and also the attack of copper interconnect by fluorine atom can be prevented. Moreover, reliability of damascene copper process is increased as the silicon rich oxide layer can prevent the diffusion of copper atoms.
Patent TW-483941-B (TW)
Title: Method for controlling thickness of titanium nitride film
Inventor: HUANG YING-YAU
IPC: C23C14/06
Filed: 1999-10-11
Granted: 2002-04-21
Abstract: The objective of the present invention is to provide a method for stabilizing the thickness of a titanium nitride (TiN) film in a sputtering deposition in a semiconductor film deposition process. The method comprises, prior to the monitor processing, using a Si dummy wafer in a pasting of titanium (Ti) and TiN film so that the whole reaction chamber is covered with TiN in order to prevent a difference in the deposition rate of the sputtering Ti/TiN film from causing an inaccuracy in the thickness of the sputtered TiN film in the monitor processing, which might affect the actual thickness of the TiN in the sputtering process.
Patent TW-476233-B (TW)
Title: Radiation noise suppressing component attachment structure
Inventor: UCHIDA KATSUYUKI
IPC: H05K9/00
Filed: 1999-10-20
Granted: 2002-02-11
Abstract: A radiation noise inhibiting component includes a magnetic sheet having a conductor layer which is bonded to the upper side of a CPU mounted on a circuit board. The conductor layer is provided on the surface of the magnetic sheet. The magnetic sheet lies between the conductor layer and the CPU. The conductor layer is grounded to the ground pattern on the circuit board through a conductor.
Patent TW-458864-B (TW)
Title: Veneer cutting machine and nose bar
Inventor: KOIKE MASARU
IPC: B27L5/02
Filed: 1999-12-01
Granted: 2001-10-11
Abstract: To provide a veneer cutting machine capable of fixing a distance from a nose bar pressurizing part which pressurizes a log near the edge of the knife upto the edge of the knife by means of respective nose bars by independently deflecting the nose bars in a direction including a component in an orthogonal direction with the edge line of the knife, in such a state that a knife is fixed to a knife mounting table with the help of a knife holder and a plurality of the nose bars are mounted side by side, in the knife edge line direction, on the nose bar mounting table as well as the nose bars. A hexagon socket setscrew 29 screwed into a female thread 27 formed on nose bars 21 is turned by a hexagonal wrench to move the hexagon socket setscrew 29 to the nose bar mounting table 19 side and the nose bars 21 are defected in an orthogonal direction with the edge line of the knife 17. Thus the pressurizing tip 31a of a tip 31 serving as the pressurizing part of the nose bar 21 is moved in the edge 17a direction of the knife 17, so that the distance from each of the pressurizing tips 31a to the edge 17a of the knife 17 is fixed.
Patent TW-462084-B (TW)
Title: Etching method for insulating film and formation method for wiring layer
Inventor: FUKAZAWA MASANAGA
IPC: H01L21/768
Filed: 2000-02-18
Granted: 2001-11-01
Abstract: This invention provides a method in which an insulating film including an organic dielectric film is etched and worked quickly without forming a damage layer and without lowering a throughput. An insulating film 14 which contains an organic dielectric film such as a laminated film by an organic dielectric film 12 such as a polyallylether film or the like and by a silicon oxide-based dielectric film 13 is formed on a substrate 10. A mask layer R is patterned and formed on the upper layer of the insulating film. Then, when the organic dielectric film part 12 is etched and worked, it is etched by making use of the mask layer as an etching mask by using ions or radicals which contain an NH group and which are generated by a gas discharge in a mixed gas of hydrogen gas and nitrogen gas or in a mixed gas of ammonia gas. While a reaction product containing a CN group is produced, the insulating film 14 (12) is etched, and an opening or the like is formed.
Patent TW-I220898-B (TW)
Title: N-substituted indolines as estrogenic agents
Inventor: ULLRICH JOHN WILLIAM
IPC: A61K31/55
Filed: 2000-02-18
Granted: 2004-09-11
Abstract: The present invention provides compound of the formula, wherein R1 is H or benzyl; R2 is H, -OH, or -O-benzyl; R3, R4, and R5 are independently H; R6 is C1-C6 alkyl; R7 is C1-C6 alkyl; n is 2; Y is O; and X is the moieties, or a pharmaceutically acceptable slat thereof, as well as pharmaceutical compositions and methods utilizing the compounds for treating or preventing disease states or syndromes which are caused or associated with an estrogen deficiency or an excess of estrogen utilizing these compounds.
Patent TW-426777-B (TW)
Title: Railway sleeper of ladder type and car rail
Inventor: WAKUI HAJIME
IPC: E01B3/28
Filed: 2000-03-30
Granted: 2001-03-21
Abstract: This invention of railway sleeper of ladder type and car rail aims to reduce pressure of roadbed or to confide the possible deflection through enhancing the supporting function of the end of its longitudinal beam. It includes following characters. (1) Set longitudinal beam 6 under rail 10 and arrange in alignment along the longitude of rail 10. (2) Interconnect multiple joint material 9 with the longitudinal beams 6 at desired intervals along the longitude of longitudinal beams 6. (3) Structure of the joint material 9 is softer than the longitudinal beams 6, and the side section of the end shape of the longitudinal beams 6 is wider than other parts of the beam.
Patent TW-492201-B (TW)
Title: AlGaInP light emitting diode
Inventor: UDAGAWA TAKASHI
IPC: H01L33/16
Filed: 2000-06-13
Granted: 2002-06-21
Abstract: The n side up type AlGaInp light-emitting diode with high illumination is disclosed which can be made with simple structure. The present invention is constructed with n type upper clad layer which formed by overlapping 3 n type AlGaInP layers having different electron concentration.
Patent TW-492251-B (TW)
Title: System for personal advertising
Inventor: STERN EDITH H
IPC: H04H20/00
Filed: 2000-06-19
Granted: 2002-06-21
Abstract: A method for displaying advertising includes the following steps: (1) storing advertising, comprising a plurality of commercials, within a storage area in a viewer unit; (2) receiving program content via a network for display; (3) recognizing a trigger, wherein the trigger calls for display of a commercial; searching for the commercial within the storage area; and (4) displaying the commercial when the commercial is located within the storage area. The method can be performed at a cable set-top box, a television unit with appropriate storage and adapted to perform the method. The method can also be performed with any end-user or client unit connected to a network such as the Internet.
Patent TW-462030-B (TW)
Title: Personal computer system having wake-up functionality controlled by a CD player control panel
Inventor: SHEN CHUN-TE
IPC: G06F1/26
Filed: 2000-06-21
Granted: 2001-11-01
Abstract: A personal computer (PC) system has, amongst other circuitry and devices, a CD ROM drive, a CD playing control circuit, an embedded controller, a button control panel and an embedded program contained within the basic input output system (BIOS) of the memory of the computer. With the CD ROM drive, the CD playing control circuit and the button control panel, a user can listen to a CD ROM when the computing and display portions of the PC system are turned off. However, upon a predetermined button pressing of the button control panel, the embedded controller will turn on both the processor and the display of the PC system, and cause the processor to begin executing the embedded program.
Patent TW-455895-B (TW)
Title: Button switch
Inventor: OKADA MITSUHIRO
IPC: H01H13/06
Filed: 2000-06-29
Granted: 2001-09-21
Abstract: The object of the present invention is to provide structure of a button switch which prevents conducting faults due to dust and the like which infiltrate into the inside of the switch for obtaining stable contact reliability using a round wire rod which is a metal wire rod, even if it is a contact point structure. The button switch comprises a housing 1 having a housing section 1a and a metallic wire rod, embedded in the housing 1 together with a fixation terminal 3, formed into a part of which include a protruded part 2a protruding outwardly and a fixation contact point 2 formed together with the fixation terminal 3 with a part of the metal wire rod exposed to the inner bottom surface of the housing section 1a, provided with a movable dome-shaped contact point 4 housed in the housing section 1a arranged to be able to contact and separate with the fixation point 2. On this upper surface of the protruding part 2a of said fixation contact point 2, a groove 2b is provided which traverses over and/or travels down the length of the protruded part 2a, so as to have the upper surface of the protruded part 2a having the groove 2b brought into contact with a movable contact point 4.
Patent TW-I256948-B (TW)
Title: Process for preparing adrenaline
Inventor: KLINGLER FRANZ DIETRICH
IPC: C07C213/00
Filed: 2000-08-11
Granted: 2006-06-21
Abstract: The present invention relates to an improved process for preparing adrenaline, or an addition salt thereof, on an industrial scale, with asymmetric hydrogenation as a key step and a special sequence of successive steps, using [Rh(COD)Cl]2 as catalyst and a chiral, bidentate phosphine ligand such as (2R, 4R)-4-(dicyclohexylphosphino)-2-(diphenylphosphino-methyl)-N-methyl-aminocarbonyl-pyrrolidine as the catalyst system.
Patent TW-500736-B (TW)
Title: Malonic ester-blocked HDI trimer stabilised with IPDA and formaldehyde
Inventor: KONIG EBERHARD
IPC: C08G18/84
Filed: 2000-08-21
Granted: 2002-09-01
Abstract: The present invention relates to blocked polyisocyanate cross-linking agents and their use in one-component sieving lacquers, in particular in solvent-containing or predominantly water-based plastics coatings having a soft-feel effect. Blocked polyisocyanate cross-linking agents which are dissolved in a solvent (mixture) and contain 100 equivalent.% NCO groups of an aliphatic and/or cycloaliphatic polyisocyanate, 80-95 equivalent.% of a CH-acid ester blocking agent, 5-20 equivalent.% of NH2 groups of an aliphatic/cycloaliphatic diamine and 5-40 mol.% of formaldehyde in incorporated form.
Patent TW-571387-B (TW)
Title: Manufacturing method for dual damascene
Inventor: SHIH TSU
IPC: H01L21/768
Filed: 2000-08-21
Granted: 2004-01-11
Abstract: The present invention provides a manufacturing method for dual damascene, which includes the following steps: sequentially forming a first etching stop layer, a first dielectric layer, a second etching stop layer, and a second dielectric layer on a semiconductor substrate; then, selectively etching the second dielectric layer, the second etching stop layer, and the first dielectric layer until exposing the first etching stop layer to form a contact via; next, using the chemical mechanical polishing to remove the protection material layer outside the contact via for leaving a protection structure in the contact via; fully coating a deep-ultraviolet photoresist layer, and exposing and developing the deep-ultraviolet photoresist layer to form a trench etching mask; using the trench etching mask as a shield and etching the second dielectric layer until exposing the second etching stop layer to form a trench; and, composing the dual damascene. The manufacturing method according to the present invention can prevent the interaction between the inter-metal dielectric and the deep-ultraviolet photoresist to avoid the deviations on the profiles of the dual damascene.
Patent TW-552674-B (TW)
Title: Etching method
Inventor: SHIEH JYU-HOMG
IPC: H01L21/768
Filed: 2000-09-28
Granted: 2003-09-11
Abstract: The present invention provides an etching method, in which CH2F2/C2F6/C4H8/CF4/C4F8 or C4F8/CO/O2 is used to etch the oxide layer to form trench inside it. During the period of etching process with this etchant, the trench bottom always maintains a good level, therefore, the problem of microtrench can be avoided, and good trench profile can still be maintained without the etching stop layer.
Patent TW-476669-B (TW)
Title: Device and method for handling used carbon powder cartridge
Inventor: NISHINO KIYOYUKI
IPC: B02C13/16
Filed: 2000-10-05
Granted: 2002-02-21
Abstract: This invention provides a device and a method for handling a used carbon powder cartridge that is broken by placing the used carbon-powder cartridge in the device in a good environment without the need of disassembling the cartridge, where each individual material is handled separately. The used carbon powder cartridge is placed in a breaking device placed under concealed, breaking state that is maintained at a condition beneath the bursting threshold for breaking the cartridge; and a differentiating device for separating the broken pieces based on their different materials. The carbon powder cartridge that has been used by equipment, such as photocopying machines, may be handled without manual disassembly, by placing the entire cartridge in the breaking device so as to recycle the materials including the remained carbon powder, ironic or non-ironic metals, glasses, and plastic in a safe and an automatic manner. As such, the handling process may be proceeded in a simple, clean, safe and efficient way while the device is constructed of a simple construction and the cost for handling the process may also be reduced.