baber/WOPTO huggingface dataset:
Patent TW-347624-B (TW)
Title: Communication device and communication method
Inventor: CHIBA TAKAMITU
IPC: H04L12/24
Filed: 1997-05-01
Granted: 1998-12-11
Abstract: A communication device for a node communication device in a network combining a plurality of nodes, which is characterized in: each node comprising an administration table for administering communication, and the administration table comprising a plurality of nodes having a downstream node, and maintaining the downstream node data of specific nodes; transmission target determining means for receiving data transmitted from upstream or downstream nodes, determining the nodes of communication target giving headers thereof for determining the transmission target of data; when a non-upmost stream node receiving data transmitted from a downstream node, if the node of the communication target is in the administration table, sending the data thereof to a downstream node; if the administration table has no the node of the communication target, the upstream node receives the data; if the communication target is in the administration table, the data is transmitted to the downstream node; if not in the administration table, the data is discarded; if the receiving target of the receiving data at the upmost stream node is in the administration table, the data is not transmitted to the downstream node and is discarded.
Patent TW-395044-B (TW)
Title: Semiconductor device and fabrication method thereof
Inventor: SATO NATSUKI
IPC: H01L21/336
Filed: 1997-07-18
Granted: 2000-06-21
Abstract: A semiconductor device comprising a semiconductor substrate of a first conductivity type, an element separating field oxide film formed on the semiconductor substrate and a MOS transistor formed in an element area defined by the field oxide film. The MOS transistor includes a gate electrode and source and drain regions each comprising a diffusion layer of a second conductivity type opposite the conductivity type of the semiconductor substrate. The semiconductor device further comprises a channel stopper of the first conductivity type and a punch-through stopper of the first conductivity type provided below the field oxide film and gate electrode, respectively. Furthermore, a diffusion layer of the second conductivity type of the MOS transistor does not contact the channel stopper and the punch-through stopper. Also disclosed is a method of fabricating the semiconductor device.
Patent TW-332913-B (TW)
Title: The process for double-layer crown capacitor
Inventor: CHEN HORNG-NAN
IPC: H01L21/70
Filed: 1997-07-29
Granted: 1998-06-01
Abstract: A process for double-layer crown capacitor, it is applied on device area on top of substrate and memory cell of isolated insulating layer on top of device area. Its process steps include: Form contact window in isolated insulating layer, to expose cell contact of device area. Form 1st conductive layer in contact window and on top of isolated insulating layer. Form 1st insulating layer on top of 1st conductive layer. Form 2nd conductive layer on top of 1st insulating layer. Form 2nd insulating layer on top of 2nd conductive layer. Remove portion of 2nd insulating and 2nd conductive layer. In which, the reserving area of 2nd insulating layer is smaller than the reserving area of 2nd insulating layer, to expose the portion area of 2nd conductive layer surface. Form etching mask on portion area of exposed 2nd conductive layer surface. Removes 2nd insulating layer, un-etched mask and residual 1st insulating area covered by 2nd conductive layer. Remove the other area of exposing 1st insulating layer that is un-covered by etching mask. Form conductive spacer on both sidewalls of etching mask and residual 1st insulating layer. Remove etching mask and residual 1st insulating layer and commonly form 1st capacitor plate on conductive sidewall and residual 1st conductive layer. Form dielectric layer on top of conductive sidewall, on sidewall and on top of residual 1st conductive layer. Form 3rd conductive layer on top of dielectric layer as 2nd capacitor plate.
Patent TW-349197-B (TW)
Title: Servo demodulator and method for synchronous servo demodulation
Inventor: GLOVER KERRY C
IPC: G11B5/596
Filed: 1997-10-14
Granted: 1999-01-01
Abstract: A servo demodulator for generating a track identification signal and a position error signal from a servo wedge signal in response to the processing of the servo wedge signal by a read channel, the servo demodulator including: a servo clock generation circuit which generates a synchronous servo clock signal in response to receiving a servo reference clock signal in response to receiving a servo reference clock signal and the filtered servo wedge signal, the synchronous servo clock signal being provided to the read channel for use in processing the servo wedge signal; a position error signal circuit which generates the position error signal in response to receiving the synchronous servo clock signal from the servo clock generation circuit and a synchronously sampled servo wedge signal from the read channel, the read channel generating the synchronously sampled wedge signal by using the synchronous servo clock signal to synchronously sample the servo wedge signal; and a track identification circuit which generates the track identification signal in response to receiving a digital servo wedge signal from the read channel.
Patent TW-340919-B (TW)
Title: A modular cache memory battery backup system
Inventor: THOMAS SINGKIAT LIONG
IPC: H02J9/00
Filed: 1997-09-11
Granted: 1998-09-21
Abstract: A sort of battery backup system, for use in a computer fast accessible DRAM, which is controlled by a fast access controller that provides usually updated signals to the fast accessible DRAM and in case of system failure, the backup battery system would provide power and updated signals to the fast accessible DRAM, including the backup battery system: (a) a battery power supply, for operation of the fast access DRAM and the backup battery system; (b) a regenerator having updated signal outputs for generation of updated signals for updating of the fast access DRAM; and (c) a backup system controller, which is to, when the system power supply rns on a proper output voltage level, sense the computer system power supply voltage and select the system power supply for supply of power to the backup system, and in another condition, for selection of battery power supply, and when the system power supply runs in a proper output voltage level, the backup system controller shall have the fast access DRAM updated signal inputs be connected to the fast access controller updated signal output and, when the system power supply is not in a proper output voltage level, the fast access DRAM updated signal input is connected to the updated generator for output of updated signals.
Patent TW-353849-B (TW)
Title: Electric-to-mechanical-to-acoustic converter and portable terminal unit
Inventor: SAIKI SHUJI
IPC: H04M1/03
Filed: 1997-11-25
Granted: 1999-03-01
Abstract: An electro-mechanical and acoustic transducer comprising: a diaphragm; a magnetic circuit unit disposed so as to be opposed to the diaphragm; a weight integrated with or attached as a separate part to the magnetic circuit unit as a separate part; the magnetic circuit unit and the weight constituting a moving unit; at least one suspension for holding the moving unit; a holding member for holding the diaphragm and the suspension; and a driving unit for generating a force to drive the diaphragm and the magnetic circuit unit.
Patent TW-348068-B (TW)
Title: Apparatus for separating fluids and/or solids or gases of different specific gravity from a fluid stream
Inventor: THEILER ANTON
IPC: B01D46/42
Filed: 1997-12-04
Granted: 1998-12-21
Abstract: An apparatus for separating fluids and/or solids or gases of different specific gravity from a fluid stream, the apparatus comprising a gas inlet connector and a gas outlet connector, which is characterized in that the apparatus comprises a tubular cavity expanding gradually in a conical shape from the gas inlet connector to the gas outlet connector, in which an auxiliary gas inlet is installed adjacent to the gas inlet connector and communicates with the cavity and is tangential to the side of the cavity.
Patent TW-424288-B (TW)
Title: Method for forming solder on a substrate
Inventor: HOTCHKISS GREGORY B
IPC: H01L21/48
Filed: 1998-02-09
Granted: 2001-03-01
Abstract: The invention discloses a method for forming solder (114) on a substrate (112). The method includes forming a decal (110) with a plurality of solder regions (113). The method further comprises aligning the decal (110) with the substrate (112) and transferring the solder regions (113) on the decal (110) to the substrate (110).
Patent TW-422779-B (TW)
Title: Double faced tape, method of and apparatus for manufacturing same
Inventor: ONISHI ARATAKA
IPC: C09J7/10
Filed: 1998-02-20
Granted: 2001-02-21
Abstract: This invention relates to a double faced tape, method of and apparatus for manufacturing same. The mass production of a coil-form, double-coated tape 10 is made possible by unwinding and conveying a roll-form, raw-fabric tape 5, with which a raw-fabric tape body, comprised of an adhesive matrix 14 overlaid over a wide, band-shaped separator, is wound so that adhesive matrix 14 side will be at the inner side, cutting the conveyed raw-fabric tape body 6 into a plurality of bands in the conveying width direction by means of a tape cutter A, cutting the adhesive matrix layer 14 of each of the cut band-shaped tape bodies 11 into three thin, cords in the width direction by means of an adhesive matrix cutter B, winding up and thereby removing the edge trimmings 14a of the cut adhesive matrix layer by means of an adhesive matrix windup shaft 40, and winding up and making into a coil the tape body 11, on which adhesive matrix 14b is overlaid only at the center in the width direction, by means of tape windup shaft 50.
Patent TW-387192-B (TW)
Title: A power saving method for networking system
Inventor: LIN HE-SHIAN
IPC: H04L29/06
Filed: 1998-03-17
Granted: 2000-04-11
Abstract: A power saving method can be applied to the Ethernet network. The Ethernet network system can run in at least two types of network protocols. It includes two major parts in this processing method. One is to target at the idle time of the network system and another is to target at the data transmission. First of all monitor the idle time of the network system and further judge if the idle time exceeds a pre-defined time. When the idle time is over the pre-defined threshold, the corrected auto-negotiation function is started to select the operating communication protocol. In the corrected auto-negotiation, the network protocol that consumes less power during the network idle time is set with higher priority and the network protocol that consumes more power is set with lower priority. When a network system is proceeding data transmission, it starts the normal auto-negotiation function to choose the operating communication protocol. In the normal auto-negotiation function, the network protocol with higher data transmission efficiency has higher priority, and the network protocol with low data transmission efficiency has lower priority.
Patent TW-416878-B (TW)
Title: Iron base powder mixture for powder metallurgy excellent in fluidity and moldability, method of production thereof, and method of production of molded article by using the iron base powder mixture
Inventor: OZAKI YUKIKO
IPC: B22F1/10
Filed: 1998-03-19
Granted: 2001-01-01
Abstract: To provide an iron-base powder mixture for powder metallurgy, excellent in warm flowability as well as in flowability at room temperature, capable of reducing extracting force at the tin of compaction, and improved in compactibility, its production, and production of a high density green compact. In the iron-base powder mixture containing an iron-base powder, a lubricant, and an alloying powder. One or more kinds selected from the iron- base powder, the lubricant, and the alloying powder are coated, desirably, with a surface treating agent consisting of one or more kinds selected from organoalkoxysilane, organosilazane, titanate-type coupling agent, and fluorine- type coupling agent. It is more desirable that the iron-base powder mixture contains the lubricant melted and sticking to the iron-base powder, the alloying powder adhering to the iron-base powder via the lubricant and the liberated lubricant powder. This iron-base powder mixture is press-compacted at the temperature not lower than the lowest melting point of the contained lubricant and lower than the highest melting point of the lubricant.
Patent TW-364186-B (TW)
Title: A semiconductor component structure having pad electrodes and the process thereof
Inventor: Song guo-dong
IPC: H01L21/768
Filed: 1998-03-19
Granted: 1999-07-11
Abstract: The present invention relates to a semiconductor component structure having pad electrodes and the process thereof, comprising the steps: providing a silicon substrate; a gate electrode structure having a two-spacer configuration is formed on the silicon substrate; ion implant is carried out using said gate electrode structure as mask to obtain an active region as source/drain electrodes; and on part of surface of the gate electrode structure having a two-spacer configuration adjacent to said active region and on said active region itself, a pad electrode is formed made of materials containing tungsten silicon so as to provide for the subsequent process of producing contact hole, said structure being the structure achieved by the above process.
Patent TW-397716-B (TW)
Title: The local exhaustion mask for process chamber maintenance
Inventor: LIOU CHING-WU
IPC: B08B3/04
Filed: 1998-04-18
Granted: 2000-07-11
Abstract: The local exhaustion mask is suitable for chamber maintenance. It includes a exhaust mask, a rotatory plate and an exhaust pipe; there is also a exhaust ring around the exhaust mask. There are various different sizes of exhaust holes to aid the ejection of exhaust gas from the inner chamber. Then, the outside exhaust holes will expel the gas from the lab.
Patent TW-493325-B (TW)
Title: A method of and apparatus for paging a wireless terminal in a wireless telecommunications system
Inventor: BUTLER BRAIN K
IPC: H04W84/04
Filed: 1998-09-07
Granted: 2002-07-01
Abstract: A method of and apparatus for paging a wireless terminal in a wireless telecommunications system reduces standby mode power consumption. A minimally encoded quick paging channel is established over which short, quick page messages (30) are transmitted during one of a set of quick paging slots. The quick page message indicates that a communications request has been received, and that the receiving communication terminals should process a highly encoded full paging channel over which more detailed, full page messages (32) are transmitted during the next full paging slot. A terminal monitors full paging channel only after a quick page message has been received on the quick paging channel.
Patent TW-382165-B (TW)
Title: A kind of tautochronous time sequence marking mechanism
Inventor: JOU KAI-JR
IPC: H04J3/16
Filed: 1998-06-09
Granted: 2000-02-11
Abstract: The method for operating multiplexer to transmit tautochronous time sequence mark in the hybrid fiber coax network is public. The multiplexer employs dummy byte to fill short packet to make the tautochronous time sequence mark for data synchronization between cable modems. The base unit of dummy byte follows the published standard such as IEEE 802.14 ad MCNS. The tautochronous time sequence marks can obviously reduce the time pulsation of cable modem or completely eliminate the time pulsation and effectively generate precise local time on the subscriber's cable modem.
Patent TW-514626-B (TW)
Title: Apparatus for manufacturing high-temperature extra-pure water and chemical processing apparatus having the same
Inventor: BAN COZY
IPC: B01D3/06
Filed: 1998-09-24
Granted: 2002-12-21
Abstract: Apparatus for manufacturing high-temperature extra-pure water is made of evaporator 22 which is used to treat preliminary-treatment water obtained from preliminary treatment system or primary pure-water obtained from primary pure-water system 21 to obtain high-temperature extra-pure water, ion exchange apparatus 23 which is used to remove the minor metal ion contained in extra-pure water obtained from evaporator 22, product-water heat exchanger 24 (made by titanium) which is used in heat-exchange of high-temperature extra-pure water having un-removed minor metal ion obtained from evaporator 22 with ordinary-temperature extra-pure water in which the removement of minor metal ion is completed by the treatment of ion exchange apparatus 23, and cooling heat-exchanger 25 (made by SUS) which is used to cool the extra-pure water which contains minor metal ion un-removed and is cooled by product-water heat-exchanger 24 to a temperature lower than 40 DEG C to become fee-water for ion exchange apparatus 23. The extra-pure water in which minor metal ion is removed and whose temperature is promoted by heating by the product-water heat-exchanger 24 is formed into electrolysis ion water or mixed with chemical by chemical-processing apparatus, and then is used in the process of semiconductor equipment process.
Patent TW-412798-B (TW)
Title: Apparatus and method for drying a semiconductor member
Inventor: KINOSHITA TAKATOSHI
IPC: H01L21/306
Filed: 1998-10-08
Granted: 2000-11-21
Abstract: The present invention relates to an apparatus and method for drying a semiconductor member. That is, the present apparatus and method for drying a semiconductor member can efficiently dry a semiconductor member while preventing the drying subject member from being deformed. The present drying apparatus is provided for drying a semiconductor member mounted in a carrier that is placed in a processing tank through contact with isopropyl alcohol. An isopropyl alcohol liquid is vaporized in a bottom portion of the processing tank, and the resulting vapor is condensed in its top portion. A heater is disposed so as to heat the inside of the processing tank to keep the inside at a predetermined temperature range in a middle-layer portion, i.e., a drying portion, of the processing tank. The heater is covered with a heat insulating member.
Patent TW-565606-B (TW)
Title: Chemical mechanical polishing slurry and method for polishing a copper layer on an integrated circuit
Inventor: WATTS DAVID K
IPC: C09K3/14
Filed: 1998-10-19
Granted: 2003-12-11
Abstract: A method for chemical mechanical polishing (CMP) a copper layer (22) begins by forming the copper layer (22). The copper layer (22) is then exposed to a slurry (24). The slurry (24) contains an oxidizing agent such as H2O2, a carboxylate salt such as ammonium citrate, an abrasive slurry such as alumna abrasive, an optional triazole or triazole derivative, and a remaining balance of a solvent such as deionized water. The use of the slurry (24) polishes the copper layer (22) with a high rate of removal whereby pitting and corrosion of the copper layer (22) is reduced and good copper interconnect planarity is achieved. This slurry (24) has good selectivity of copper to oxide, and results in copper devices which have good electrical performance. In addition, disposal of the slurry (24) is not environmentally difficult since the slurry (24) is environmentally sound when compared to other prior art slurries.
Patent TW-413895-B (TW)
Title: Method for improving stability of copper processing
Inventor: LIOU JUNG-SHI
IPC: H01L21/768
Filed: 1998-12-18
Granted: 2000-12-01
Abstract: The present invention provides a method for improving stability of copper processing which is to from the copper germanium alloy on the copper wire surface below the via hole so as to improve the anti-oxidation capability of copper wire. The method includes the following steps: (a) providing a semiconductor substrate and forming a via hole on the dielectric layer of the substrate to expose the copper conductive layer underneath; (b) forming the copper germanium alloy on the exposed surface of copper conductive layer; (c) forming a barrier layer to cover the dielectric, the via hole and the copper germanium alloy; (d) forming a copper metal layer on the barrier layer and filling the via hole.
Patent TW-552258-B (TW)
Title: Thermodynamically stable form of (R)-3-[[(4-fluorophenyl)sulphonyl]-amino]-1,2,3,4-tetrahydro-9H-carbazole-9-propanoic acid) (ramatroban)
Inventor: GRUNENBERG ALFONS
IPC: C07D209/88
Filed: 1998-12-23
Granted: 2003-09-11
Abstract: The present invention relates to a thermodynamically stable modification of the active compound ramatroban. The thermodynamically stable form is pre-pared either by melting of the metastable form and subsequent recrystallization or by seeding a solution of the metastable active compound with a seed crystal of the thermodynamically stable form. The thermodynamically stable active compound can be employed as an asthma agent.
Patent TW-585848-B (TW)
Title: Method for producing inorganic semiconductor ceramic plate
Inventor: SHAU REN-TAI
IPC: C04B35/00
Filed: 1999-02-08
Granted: 2004-05-01
Abstract: A method for producing an inorganic semiconductor ceramic plate mainly comprises mixing a suitable amount of a high-temperature-resistant inorganic conductive ultra fine powder into a fluid clay; uniformly mixing the mixture; shaping the mixture; and baking the shaped mixture after shaping in a kiln at temperatures over 1360 DEG C so that the inorganic conductive fine powder is molten into the clay molecules, thereby modifying the physical properties of the molding and endowing electrical conductive property to the ceramic plate made.
Patent TW-456162-B (TW)
Title: Rigid/flex printed circuit board and manufacturing method therefor
Inventor: MCKENNEY DARRYL
IPC: H05K1/02
Filed: 1999-07-26
Granted: 2001-09-21
Abstract: In a rigid/flex circuit board and fabricating process, patterns of electrical traces are formed by etching conductive layers on outer surfaces of a flexible multi-layer circuit structure. A protective barrier material is deposited on the etched traces using an ""electroless"" process, such as immersion of the flexible circuit board in an aqueous solution containing ionic tin. The protective barrier material adheres to and encapsulates the copper traces. An outer circuit structure including a bondfilm of epoxy-impregnated fiberglass (""prepreg"" bondfilm) and a copper foil layer is laminated onto the flexible circuit structure. The prepreg bondfilm has a window area removed by routing or an equivalent process prior to being laminated to the flexible structure. The window are defines a flex area of the rigid/flex circuit board that will be relatively flexible. The portion of the outer copper foil above the window area of the prepreg bondfilm is then removed using a chemical etchant to which the previously-applied protective barrier material is immune, such as an ammoniacal etching solution. After the copper foil is etched, the protective barrier material in the flex area of the flexible circuit is stripped away. A flexible sealing coating is then applied to the circuit board to cover the edges of the outer laminated circuit structure.