baber/WOPTO huggingface dataset:
Patent TW-538016-B (TW)
Title: Method and apparatus for disposing of waste dust generated in the manufacture of cement clinker
Inventor: YOUNG ROM D
IPC: C04B7/43
Filed: 2000-08-25
Granted: 2003-06-21
Abstract: A method of disposing of undesirable chemical compounds in waste dust generated in a first kiln in the manufacture of cement clinker by using the dust and slag as the feedstock material to a second kiln, heating the feedstock material in an oxidizing atmosphere, and raising the heat sufficient to diffuse the waste dust and the slag to form a hydraulic product such as cement clinker and lime but insufficient to volatilize previously precipitated chemical compounds in the feedstock material.
Patent TW-513716-B (TW)
Title: Tracking error detector
Inventor: HIRATSUKA TAKASHIGE
IPC: G11B7/09
Filed: 2000-08-29
Granted: 2002-12-11
Abstract: The tracking error detector is disclosed as Fig. 1, in which the optical current detected by the optical detector 2 is converted into the voltage signals by the current-voltage converter 7a-7d, the voltage signals are added by the adder 8a, 8b for producing two signal series. The two signal series are digitizing by the ADC 16a, 16b and interpolating by the interpolator 17a, 17b for detecting the zero crossing point with the zero crossing point detector 18a, 18b. The tracking error signal is produced by detecting the phase difference between the zero cross points of the two signal series with the phase difference detector 19, and band limiting the phase difference with the LPF 11. In the present invention, the tracking error detector can be provided with small size and low cost, which can meet the requirements for high speed of optical record/regenerate device and high density of the optical record medium.
Patent TW-478210-B (TW)
Title: Electrical connector, modular jack, and electrical connector system
Inventor: BELOPOLSKY YAKOV
IPC: H01R13/6464
Filed: 2000-10-05
Granted: 2002-03-01
Abstract: An electrical connector has an insulating housing with an interior cavity for receiving a mating connector and a plurality of openings in communication with the interior cavity. A plurality of contacts, each of which extends into the interior cavity of the housing from a respective one of the openings, electrically contacts conductors in the mating connector inserted into the interior cavity of the housing. An internal shield extends into the interior cavity from a respective one of the openings and is positioned between the plurality of contacts to create at least two groups of contacts.
Patent TW-546311-B (TW)
Title: Composition and method for color improvement of nitroxyl containing polymers
Inventor: PFAENDNER RUDOLF
IPC: C08L101/00
Filed: 2000-10-11
Granted: 2003-08-11
Abstract: The invention relates to a composition comprising, (a) at least one oligomer, cooligomer, polymer or copolymer or blends thereof, containing a stable free nitroxyl radical: and (b) a reducing agent; with the proviso that the composition is essentially free of a polymerizable monomer. A further subject is a process for improving the color of an oligomer, cooligomer, polymer or copolymer or blends thereof, containing a stable free nitroxyl radical by adding a reducing agent to said polymer and heating said mixture to above the glass temperature in case of amorphous polymers or above the melting point in case of crystalline or semi-crystalline polymers.
Patent TW-459369-B (TW)
Title: Method for controlling the deposition rate in organic metal chemical vapor deposition of titanium silicide to facilitate the subsequent tungsten plug deposition
Inventor: SHIU KUEN-SZ
IPC: H01L23/522
Filed: 2000-10-17
Granted: 2001-10-11
Abstract: There is provided a method for controlling the deposition rate in using the organic metal chemical vapor deposition method to deposit titanium silicide for making the subsequent tungsten plug deposition easy. When using the organic metal chemical vapor deposition method to deposit titanium silicide, the deposition rate is controlled to be 10.00 to 10.67 Å per second, so as to obtain a titanium silicide layer which has a good step coverage capability and is thinner on the sidewall of the dielectric layer than on the surface of the dielectric layer.
Patent TW-469469-B (TW)
Title: Fabrication method of vacuum display and its structure
Inventor: LAI JIUN-TSUEN
IPC: H01J29/18
Filed: 2000-10-18
Granted: 2001-12-21
Abstract: The present invention provides a fabrication method of vacuum display with support pillars and the vacuum display using the method in which lots of support pillars are fixed to a clipping device first to make the bottom of the support pillars extend outward vertically and are exposed from the clipping device, the clipping device is pressed to a substrate with an adhesive layer applied, and finally the clipping device is moved away from the adhesive layer to be pressed on the bottom glass panel of vacuum display hence the support pillars contact active area of the bottom glass panel after fully coating an adhesive layer on the bottom of the support pillars. The completed structure can be optionally annealed at a temperature between 250 to 600 DEG C to improve the binding strength and to release the binding stress. After the support pillars are fully bound to the bottom glass panel, removing the clipping device and binding the upper glass panel to the top of the support pillars and to the outer four-side walls of the vacuum display to form a vacuumed airtight chamber.
Patent TW-508768-B (TW)
Title: Multi-layer interconnect
Inventor: POMMER RICHARD
IPC: H05K3/00
Filed: 2001-02-01
Granted: 2002-11-01
Abstract: Methods and apparatus for increasing the yield achieved during high density interconnect (HDI) production. In particular, processes in which panels are tested to identify good cells/parts, good cells are removed from the panels, and new panels created entirely of identified/known good cells allow increases in the number of layers used in a HDI without incurring the decrease in yield normally associated with such a layering process.
Patent TW-461962-B (TW)
Title: A method and apparatus for determining the material type of a plastic
Inventor: REHRMANN VOLKER
IPC: G01N21/359
Filed: 2000-11-16
Granted: 2001-11-01
Abstract: The invention relates to a method and an apparatus for determining the material type of plastic, comprising the steps of: (a) irradiating the plastic with near infrared light; (b) taking the spectrum of the radiation having interacted with the plastic; (c) evaluating the obtained spectrum; (d) associating the obtained spectrum to a standard spectrum and (e) associating the plastic with a material type corresponding to said standard spectrum. For taking the spectrum, the radiation reflected by the plastic and the radiation being transmitted through the plastic at least two times is detected.
Patent TW-473830-B (TW)
Title: Single crystal silicon layer, its epitaxial growth method and semiconductor device
Inventor: YAMOTO HISAYOSHI
IPC: H01L21/205
Filed: 2000-12-08
Granted: 2002-01-21
Abstract: In case of epitaxially growing a single crystal silicon layer by catalytic CVD on a material layer in lattice alignment with single crystal silicon, i.e. a substrate of single crystal silicon, sapphire, spinel, or the like, the total pressure of the growth atmosphere is maintained in the range from 1.33x10<SP>-3</SP> Pa to 4 Pa at least in the initial period of the epitaxial growth, or alternatively, partial pressure of oxygen and moisture in the growth atmosphere is maintained in the range from 6.65x10<SP>-10</SP> to 2x10<SP>-6</SP> Pa at least in the initial period of the epitaxial growth. Thus, the maximum oxygen concentration of the epitaxially grown single crystal silicon layer becomes not higher than 3x10<SP>18</SP> atoms/cm<SP>-3</SP> at least in a portion with the thickness of 10 nm from the boundary with the substrate 4. It is thus ensured to epitaxially grow a high-quality single crystal silicon layer at a lower temperature than that of existing CVD.
Patent TW-583775-B (TW)
Title: Surface lighting device
Inventor: EHARA MUNETSUGU
IPC: G02F1/1335
Filed: 2000-12-26
Granted: 2004-04-11
Abstract: The subject of the present invention is to provide a surface lighting device with good uniformity and with high brightness. The solution includes: a light guide plate with opposite upper and lower surfaces; a reflection object, configured below the light guide plate; and, an LED light source, which has at least one LED element to emit the light from the LED element from one edge of the light guide plate, and to emit the light from the upper surface of the light guide plate. The device is characterized in: the light guide plate has a recessed light diffusion portion for dispersing the light emitted from the LED light source in the light guide plate, and the light diffusion portion is formed by separating one edge from the upper part of the light diffusion portion.
Patent TW-569334-B (TW)
Title: Etchant, etching method and semiconductor silicon waffer
Inventor: MIYAZAKI SEIICHI
IPC: C30B33/08
Filed: 2000-12-28
Granted: 2004-01-01
Abstract: An etchant and an etching method that contribute to prevention of metal contamination of a semiconductor silicon wafer, and a semiconductor silicon wafer in which metal contamination is extremely reduced, are provided. The etchant according to the present invention is prepared by immersing stainless steel in an alkali aqueous solution for not less than 10 hours. In the etching method according to the present invention, a semiconductor silicon wafer is etched by using the etchant. Thereby, the semiconductor silicon wafer according to the present invention, in which metal contamination is extremely reduced, is obtained.
Patent TW-469495-B (TW)
Title: Device and method for cleaning semiconductor encapsulation structure
Inventor: CHEN MING-HUEI
IPC: H01L21/00
Filed: 2000-12-29
Granted: 2001-12-21
Abstract: The device for cleaning a semiconductor encapsulation structure according to the present invention directly transfers the semiconductor encapsulation structure through a reflowing machine to the cleaning device. The semiconductor encapsulation structure has a plurality of metal balls. The cleaning device comprises: more than one cleaning zones each having a water storage tank, more than one nozzles, a heating device for heating water in the water storage tank to a suitable temperature, and a water pumping device for pumping the heated water to the nozzles for cleaning the semiconductor encapsulation structure by the heated water through the nozzles. Thus, a semiconductor encapsulation structure, after passing through the reflowing machine and prior to being cooled, enters the cleaning zones; and then the heated water is used to directly activate the impurities such as flux on the metal balls of the semiconductor encapsulation structure and wash them off.
Patent TW-546136-B (TW)
Title: Absorbent incontinence pads
Inventor: SUZUKI MIGAKU
IPC: A61F13/494
Filed: 2001-01-12
Granted: 2003-08-11
Abstract: An absorbent incontinence pad is provided with a liquid impervious air permeable back sheet and an absorbent unit partly covered by the back sheet, wherein the absorbent unit has a non-woven fabric substrate, an absorbent zone formed by a plurality of highly absorbent layers extending in the form of bands on the surface of the non-woven fabric substrate and an air permeable zone where no such highly absorbent layer exists, which has sufficiently adequate properties to meet incontinence requirements and provides a comfortable feeling during use.
Patent TW-I248341-B (TW)
Title: Edible oil with low oil smoke
Inventor: LIU SHIOU-JIE
IPC: A23D7/04
Filed: 2001-01-20
Granted: 2006-02-01
Abstract: The present invention discloses an edible oil with low oil smoke, which is obtained by treating an edible oil with more than 70% of monounsaturated fatty acid through a refine treatment with high performance at a temperature more than 230 DEG C and a vacuum less than 10 mmHg; wherein said edible oil obtained therefrom produces oil smoke at the amount of less than 60 ppm while heating.
Patent TW-553810-B (TW)
Title: Pneumatic rotary tool
Inventor: IZUMISAWA OSAMU
IPC: B25B21/00
Filed: 2001-03-05
Granted: 2003-09-21
Abstract: A pneumatic rotary tool has a housing formed primarily from plastic so that the weight and price of the tool are substantially reduced. The air motor is formed for economic assembly while permitting greater structural stability should the housing deflect under an impact. The tool includes a torque selector which controls the amount of pressurized air allowed to enter the air motor, thereby controlling the torque output of the motor. The user may adjust the torque selector to a number of set positions which correspond to discrete torque values. The tool additionally incorporates early and late stage exhaust ports, so that backpressure within the air motor does not slow motor rotation or decrease tool power.
Patent TW-493281-B (TW)
Title: Semiconductor device and method for manufacturing the same
Inventor: SHUICHI KIKUCHI
IPC: H01L29/10
Filed: 2001-03-01
Granted: 2002-07-01
Abstract: This invention provides a semiconductor device and a method for manufacturing the same to reduce the ON-state resistance with desired withstand voltage secured, in which the semiconductor device provided with a gate electrode formed on a semiconductor substrate 1 via a gate insulating film 8, an LP layer 5 (a P-type body region) formed so that the LP layer is adjacent to the gate electrode 10, an N-type source region 12 and a channel region 11 respectively formed in the LP layer, an N-type drain region 13 formed in a position apart from the LP layer 5 and an LN layer 14 (a drift region) formed so that the LN layer 14 surrounds the drain region13 is characterized that a P-type layer 9 ranging to the LP layer 5 is formed under the gate electrode 10.
Patent TW-554117-B (TW)
Title: A steering or lifting mechanism
Inventor: DYSON JAMES
IPC: D06F39/00
Filed: 2001-03-16
Granted: 2003-09-21
Abstract: The invention provides a mechanism suitable for lifting an appliance, particularly a domestic appliance. The mechanism (2) comprises a generally cylindrical body (8) having a wall (50) and a longitudinal axis (16) which extends in an upward direction. At least one rolling support member (20) is rotatably mounted on an axle (100) beneath the body (8). A housing (6) having a generally cylindrical socket portion (200) with an inner surface (208) receives the body (8). The wall (50) and the inner surface (208) incorporate opposing camming surface (62)(210) such that when the body (8) is rotated about the axis (16) with respect to the socket portion (200), the camming surface (62)(210) co-operate. The housing (6) is moved axially with respect to the body (8) and away from the at least one rolling support member (20). The mechanism (2) lifts the appliance (400) from a resting position and into an elevated position ready for manoeuvring. The invention further provides a mechanism (2) suitable for steering an appliance (400). The mechanism (2) comprises a housing (6) and a body (8). The body (8) is connected to the housing (6) so as to allow relative rotation therebetween about a vertical axis (16). At least one rolling support member (20) is mounted on a horizontal axle (100), the axle being mounted on the body (8) and located so as to intersect the vertical axis. A handle portion (10) is connected to the body (8) and extends radially outwardly from the vertical axis (16). This arrangement allows the consumer to steer the appliance in an elevated position, in a range of directions, including but not limited to forwards and backwards.
Patent TW-I222209-B (TW)
Title: Manufacturing method of semiconductor device having DRAM capacitors
Inventor: KUBOTA RYO
IPC: H01L21/8242
Filed: 2001-03-27
Granted: 2004-10-11
Abstract: A manufacturing method of a semiconductor device having a CMOS logic circuit portion and a DRAM portion mixedly mounted on one chip. Preferably, the DRAM portion has a cylinder structure capacitor element. In the manufacturing method, the polysilicon film is formed on an interlayer film and on an inner wall of a cylinder-shaped opening formed in the interlayer film. Spherical or hemispherical grains called HSG are formed on the polysilicon film. The polysilicon film and the HSG on an upper surface of the interlayer film are removed while the polysilicon film and the HSG on the inner wall of the cylinder is retained. By performing these steps in this order, the HSG is reliably formed on the inner wall of the cylinder without fail. Therefore, a miniaturized capacitor element having high capacitance may be formed in a semiconductor device with a CMOS logic circuit portion and a DRAM portion mixedly mounted on one chip.
Patent TW-I233573-B (TW)
Title: Method and apparatus for reducing primitive storage requirements and improving memory bandwidth utilization in a tiled graphics architecture
Inventor: HSIEH HSIEN-CHENG
IPC: G06T15/00
Filed: 2001-04-17
Granted: 2005-06-01
Abstract: A method and apparatus for reducing memory bandwidth utilization in a tiled graphics architecture is disclosed. In one embodiment, a microprocessor reads vertex data for a graphics primitive from graphics memory. The processor determines with which bins the graphics primitive intersects. Assuming that the processor determines that the graphics primitive intersects a first and a second bin, the processor writes the vertex data for the graphics primitive to a first bin storage area in graphics memory. The processor then writes a pointer to a second bin storage area. The pointer indicates the location in memory of the actual vertex data.
Patent TW-595280-B (TW)
Title: Copper foil for TAB tape carrier, TAB tape carrier using the copper foil and TAB carrier tape
Inventor: ENDO AYUMI
IPC: H01L23/498
Filed: 2001-04-10
Granted: 2004-06-21
Abstract: This invention relates to a copper foil for a TAB tape carrier having an alloy layer comprising nickel, cobalt and molybdenum, which is formed on the shiny surface of the copper foil; a TAB carrier tape comprising a flexible insulation film, and the copper foil for a TAB tape carrier applied onto the flexible insulation film with a surface on the side of the mat surface facing the flexible insulating film; and a TAB tape carrier, which is produced from the TAB carrier tape by etching the copper foil for a TAB tape carrier to form a copper lead pattern.
Patent TW-480735-B (TW)
Title: Structure and manufacturing method of polysilicon thin film transistor
Inventor: JANG DING-JANG
IPC: H01L21/336
Filed: 2001-04-24
Granted: 2002-03-21
Abstract: A kind of method for manufacturing polysilicon thin film transistor is disclosed in the present invention. In the method, the active region of amorphous silicon channel layer is defined after an amorphous silicon channel layer is deposited on the insulating substrate, and an oxide layer and a gate electrode are sequentially formed on the amorphous silicon channel layer. After that, a lightly doped source/drain region and a spacer covering the gate electrode are formed in the amorphous silicon channel layer. Then, a source/drain region is formed in the amorphous silicon channel layer, and part of oxide layer on the source/drain region is removed. In addition, an insulating spacer is formed on the sidewall of the spacer. After that, a self-aligned metal silicide layer is formed on the top portion of the spacer and the source/drain region. Finally, by using the self-aligned metal silicide layer on the source/drain region, metal-induced lateral crystallization is generated so as to make amorphous silicon channel layer crystallize to form a metal-induced lateral crystallized polysilicon channel layer.
Patent TW-533684-B (TW)
Title: Generating separate analog audio programs from a digital link
Inventor: SHI JUN
IPC: G10L19/008
Filed: 2001-05-10
Granted: 2003-05-21
Abstract: A codec (26) in a processor-based system (10) handles at least two separate audio programs at the same time. This may be useful, for example, for simultaneously playing one audio program while recording another audio program. A first digital to analog converter pair (58) may be coupled to a first mixer (62) and a second digital to analog converter pair (80) may include a second mixer (82). Thus, two separate audio programs may be handled at the same time, each by a separate digital to analog converter and mixer.
Patent TW-536449-B (TW)
Title: Method for preventing scratching wafers due to fracturing of polishing articles
Inventor: WANG TING-CHUN
IPC: B24B7/24
Filed: 2001-05-11
Granted: 2003-06-11
Abstract: Disclosed is a method for preventing scratching wafers due to fracturing of polishing articles, which is applicable to a chemical-mechanical polishing device, comprising the steps of: providing a polishing pad comprising a plurality of polishing articles on a surface thereof to the chemical-mechanical polishing device for polishing wafer; adjusting the polishing articles such that they protrude from the surface of the polishing pad a predetermined height, wherein the predetermined height is 1/2 to 2/3 of the height of the polishing articles.
Patent TW-523866-B (TW)
Title: Interconnect structure having double-layered dielectric spacer and its manufacturing method
Inventor: CHUNG CHENG-HUI
IPC: H01L21/60
Filed: 2001-05-23
Granted: 2003-03-11
Abstract: A kind of interconnect structure having double-layered dielectric spacer and its manufacturing method are disclosed in the present invention. In the invention, the first dielectric layer is formed on the interconnect of the semiconductor substrate surface. Then, an etch back process is conducted onto the first dielectric layer to expose the top portion of interconnect and substrate surface such that the first dielectric layer, which is residual on the interconnect sidewall, becomes the first dielectric spacer. The second dielectric layer is formed on the surface of the interconnect, the substrate and the first spacer. An etch back process is then conducted onto the second dielectric layer to expose the top portion of interconnect and substrate surface such that the second dielectric layer, which is residual on the first dielectric spacer, becomes the second dielectric spacer. Finally, the third dielectric layer is formed to cover the exposed surface of the interconnect, the substrate and the second spacer. A flattening process is performed onto the third dielectric layer. Thus, the first dielectric spacer is used as a stress buffer layer and the second dielectric spacer is used as an etch stop layer or the fixed support layer of interconnect.
Patent TW-I285549-B (TW)
Title: Therapeutic combinations of fatty acids
Inventor: HORROBIN DAVID FREDERICK
IPC: A61K31/20
Filed: 2001-06-29
Granted: 2007-08-21
Abstract: Eicosapentaenoic acid or any appropriate derivative (EPA) is disclosed in combination with arachidonic acid (AA) or an AA precursor, selected from DGLA and GLA, to give a pharmaceutical formulation.
Patent TW-I237008-B (TW)
Title: Electrodeionization apparatus and method of operating the same
Inventor: SATO SHIN
IPC: B01J47/08
Filed: 2001-07-12
Granted: 2005-08-01
Abstract: Feed water, fed through an inlet 6 into a desalting compartment 8, flows around the end 4a of an anion-exchange membrane 4 surrounding an anode 2a. The feed water enters into a portion defined between the anion-exchange membrane 4 and a cation-exchange membrane 5, and flows around the end 5a of the cation-exchange membrane 5 surrounding a cathode 3a. Then, the water to be treated further flows around the ends 4b, 5b of ion-exchange membranes 4, 5 surrounding an anode 2b and a cathode 3b, respectively, and then flows out through a product water outlet 7. A part of product water is supplied to the concentrated water circulating within the concentrating compartment 30, 40. A part of the concentrated water flowing out of the concentrating compartment 30, 40 is added to concentrated water circulating within the concentrating compartment 10, 20. The diffusion of silica from the concentrating compartment is restricted. As a result, final product water containing extremely low silica concentration is obtained.