baber/WOPTO huggingface dataset:
Patent TW-426881-B (TW)
Title: Method of defining pattern
Inventor: LIN CHIA-HUI
IPC: H01L21/027
Filed: 1999-10-13
Granted: 2001-03-21
Abstract: This invention provides a method of defining pattern that is used to transfer the original pattern on the original mask to a photo-resist layer. In the invented method, at first, a logic operation is performed according to the original pattern to generate a complementary pattern and a complementary mask is fabricated according to the complementary pattern. Two times of exposure process are then performed onto the photoresist layer on a semiconductor wafer. The exposure dosage of the first exposure process is the first exposure dosage, in which the original mask is used as the barrier. The exposure dosage of the second exposure process is the second exposure dosage and is smaller than the first exposure dosage, in which the complementary mask is used as the barrier. At last, a developing process is performed to strip part of the photo-resist layer so as to make the photo-resist layer form the pattern similar to the original pattern.
Patent TW-416891-B (TW)
Title: Method of detecting the ending point during the chemical mechanical polishing process
Inventor: JUANG RUEI-PING
IPC: B24B37/04
Filed: 1999-11-02
Granted: 2001-01-01
Abstract: This invention is about the method of detecting the ending point during the chemical mechanical polishing process. At first, the chemical mechanical polishing process is performed onto the wafer, in which there is a polishing layer on the top surface of the wafer. Two incident lights are irradiated onto the polishing layer, where the incident lights used can have different wavelengths or different incident angles. The first reflected light and the second reflected light, which are generated after the first incident light and the second incident light are irradiated onto the polishing layer, respectively, are then detected. According to the intensity of the first reflected light and the intensity of the second reflected light, the ending point of the chemical mechanical polishing process is determined.
Patent TW-511385-B (TW)
Title: Pre-page timer
Inventor: RUNE JOHAN
IPC: H04W8/12
Filed: 1999-11-16
Granted: 2002-11-21
Abstract: Response-timer problems due to optional features in communication networks are addressed by having a node such as an MSC/VLR that uses the optional feature promptly respond to another node's request for information with a message indicating that the node has implemented the optional feature. This indication can be implemented either as a new message or/as a suitable information element in a message already usually sent from one node to the other. Upon receiving such a prompt response, the node would adjust its response-monitoring timer to a value appropriate for the optional feature. Nodes in the communication network may also generate messages indicating that they implement the optional feature.
Patent TW-459297-B (TW)
Title: Method of processing semiconductor wafers to build in back surface damage
Inventor: XIN YUN-BIAO
IPC: B24B7/22
Filed: 1999-12-23
Granted: 2001-10-11
Abstract: A method of processing a semiconductor wafer sliced from a single-crystal ingot includes lapping front and back surfaces of the wafer to reduce the thickness of the wafer and to improve the flatness of the wafer. The front surface is subjected to fine grinding to reduce the damage on the front surface while leaving damage on the back surface intact. The front and back surfaces are simultaneously polished to improve the flatness of the wafer and to reduce wafer damage on the front and back surfaces. The wafer damage remaining on the back surface is greater than the wafer damage on the front surface. The wafer damage remaining on the back surface facilitates gettering.
Patent TW-480452-B (TW)
Title: Optical path design for scanning assembly in compact bar code readers
Inventor: DVORKIS PAUL
IPC: G06K7/10
Filed: 2000-06-22
Granted: 2002-03-21
Abstract: A retroreflective optical scan module, for example in a bar code reader having a window, including a light source for directing a light beam to a symbol to a symbol to be read, and an optical assembly including a light collecting portion which collects and redirects the light along an optical path to a sensor, wherein the optical axis of the light collecting portion is displaced from that of emitted light beam so that emitted light partially reflected by the window of the reader does not illuminate the sensor.
Patent TW-453973-B (TW)
Title: Paper feeding device
Inventor: ISHIDA SATOSHI
IPC: B65H3/06
Filed: 2000-01-19
Granted: 2001-09-11
Abstract: A paper feed apparatus having a pickup mechanism to pick up a plurality of paper sheets stacked on a chute one by one from the bottom and carrying the paper sheets to a predetermined standby position, comprises a gate 2 disposed facing a pickup roller 1 almost vertically with respect to the direction of paper feed to form a predetermined clearance, a paper-sheet separating pad 3 disposed in sliding contact with the pickup roller 1 to pick up the paper placed on the standby position one by one, and a pickup arm 4 that can be driven to be moved upward when setting paper sheets and downward when feeding paper sheets to push from above the paper sheets stacked on a chute 13 near a paper-sheet feed port. The pickup arm 4, when brought into free state as the planetary gear 5 disengages from the drive power transmission system, pushes paper sheets with a pushing force that increases with increases in the number of paper sheets stacked on the chute.
Patent TW-463337-B (TW)
Title: Leadframe structure used for semiconductor devices
Inventor: CHEN CHING-FENG
IPC: H01L23/043
Filed: 2000-02-25
Granted: 2001-11-11
Abstract: The present invention focuses on the original problem of controlling the thickness of soldering material, in which aged crack is generated for the soldering material after a period of time, and the soldering material finally loses its adhesiveness and causes the peeling-off between the chip and the lead frame after many times of repetitive expansion and contraction brought by the operations (on, off) of the semiconductor device so as to make the semiconductor device malfunction. The present invention can be used to realize the control plan that is simple, correct, and without the need of thickness test through the structure adjustment of the lead frame. The purpose of the present invention is to provide a kind of lead frame structure, which is correct, easy and has good repetition characteristic, especially for the requirement of controlling the adhesion thickness. In addition, good adhesion between the chip and lead frame after repeatedly conducting the operations of increasing temperature and decreasing temperature is assured for the invented lead frame structure.
Patent TW-539709-B (TW)
Title: Coating composition
Inventor: MATSUKI YASUO
IPC: C01B33/04
Filed: 2000-03-29
Granted: 2003-07-01
Abstract: A coating composition comprising a silicon compound represented by the following formula (1): SinX1n, wherein X1 is a hydrogen atom or a halogen atom, and n is an integer of 4 or more, on the proviso that n occurrences of X1 may be the same as or different from one another, or a modified silane compound represented by the following formula (2): SinX2mY1, wherein X2 is a hydrogen atom or a halogen atom, Y is a boron atom or a phosphorus atom, n is an integer of 3 or more, 1 is an integer of 1 or more, and m is an integer of n to 2n+3, on the proviso that m occurrences of X2 may be the same as or different from one another, and solvent thereof. This coating composition is suitably used in the production of a device for forming a silicon film or a boron- or phosphorous-doped silicon film on a substrate having a large area.
Patent TW-457574-B (TW)
Title: Apparatus for fabricating a semiconductor device and method of doing the same
Inventor: TOKASHIKI KEN
IPC: H01L21/461
Filed: 2000-04-07
Granted: 2001-10-01
Abstract: There is provided a method of fabricating a semiconductor device, including the steps of (a) generating plasma in the following conditions: (a1) an RF bias voltage has a frequency equal to or greater than 1 MHz, (a2) an RF source voltage has a frequency equal to or greater than 1 MHZ, (a3) the RF source voltage is modulated by pulses in a cycle equal to or greater than 100 μsec, and (a4) pulse-on time is equal to or greater than 50 μsec, and (b) patterning multi-layered metal wirings by etching through the plasma. The method makes it possible to reduce charging damage to a gate insulating film, even if wirings are further spaced away from adjacent ones and/or an antenna ratio of multi-layered metal wirings is further increased.
Patent TW-554616-B (TW)
Title: Optimum turbo decoding architecture and method using a constant or quasi-constant signal-to-noise ratio
Inventor: GERSTENBERGER DIRK
IPC: H04B7/005
Filed: 2000-05-18
Granted: 2003-09-21
Abstract: Use of a more accurate, constant or quasi-constant reference signal-to-noise ratio value to support the process of decoding information sequences that have been encoded using turbo coding techniques, particularly in UMTS WCDMA receivers, enhances the accuracy of the decoding process and, in turn, link quality and overall system performance. This may be accomplished by exploiting the reference SNR, which is generated, for example, by the power control loop in the receiver. More specifically, the present invention modifies this reference SNR value based on various factors including, but not limited to, the scaling factor that is applied to the decoder input metrics, power settings, processing gains, coding rates and/or the modulation scheme.
Patent TW-472384-B (TW)
Title: Semiconductor device and method of manufacturing the same
Inventor: ITOH AKIO
IPC: H01L21/314
Filed: 2000-06-14
Granted: 2002-01-11
Abstract: There is provided a semiconductor device which is manufactured via steps of forming a capacitor which is obtained by forming in sequence an upper electrode, a dielectric film formed of ferroelectric material or high-dielectric material, and a lower electrode on a semiconductor substrate, then forming an interlayer insulating film on the capacitor, then planarizing a surface of the interlayer insulating film by the CMP polishing, then removing a moisture attached to a surface of the interlayer insulating film or a moisture contained in the interlayer insulating film by applying the plasma annealing using an N2O gas, and then forming a redeposited interlayer film on the interlayer insulating film.
Patent TW-449938-B (TW)
Title: Light emitting diode with a substrate electroplated with metal reflector and the manufacturing method hereof
Inventor: HUANG MAN-FANG
IPC: H01L33/00
Filed: 2000-06-16
Granted: 2001-08-11
Abstract: The present invention discloses a light emitting diode (LED) with a substrate electroplated with metal reflector and the manufacturing method thereof. A substrate with metal reflective surface is used as the permanent substrate of the LED. After growing the LED device structure on a temporary substrate, the LED device is adhered on a permanent substrate having the reflector. Next, the prior temporary substrate capable of absorbing the light is removed so that the emitted light energy from LED device is not absorbed by the substrate, and also the light is reflected toward the substrate direction from the surface to increase the light emitting brightness.
Patent TW-501981-B (TW)
Title: Printing head for squirting out a hot liquid medium and process for the production of a connection point comprising metallic solder
Inventor: WEHL WOLFGANG
IPC: B23K3/06
Filed: 2000-07-31
Granted: 2002-09-11
Abstract: The invention relates to a printing head for squirting out a hot liquid medium, having a diaphragm forming one wall of a medium chamber, and having an actuator in mechanical contact with the diaphragm, which is distinguished by the fact that the actuator (11) is thermally decoupled from the diaphragm (7).
Patent TW-448144-B (TW)
Title: Phenoxyphenyl cyclopentenyl hydroxyureas
Inventor: KAWAI AKIYOSHI
IPC: C07C275/64
Filed: 1994-07-25
Granted: 2001-08-01
Abstract: Certain novel phenylsubstituted cyclopentenylhydroxyurea compounds having the ability to inhibit the 5-lipoxygenase enzyme and being the dextrorotatory isomers of the compounds having the following formula: and the pharmaceutically acceptable salts thereof, wherein R1 is hydrogen, fluoro or chloro; and R2 is hydrogen or methyl. These compounds are useful in the prevention, treatment or alleviation of inflammatory diseases, allergy and cardiovascular diseases in mammals, and as the active ingredient in pharmaceutical compositions for treating such conditions.
Patent TW-459374-B (TW)
Title: Method for forming magnetic layer of magnetic random access memory
Inventor: JANG YAN-RUNG
IPC: H01L21/8246
Filed: 2000-08-30
Granted: 2001-10-11
Abstract: The present invention relates to a kind of method for forming magnetic layer of magnetic random access memory. The method at least contains the following steps: providing a substrate; forming a metal structure on the substrate; forming a stop layer on the substrate to uniformly cover the metal structure; forming a buffer layer to uniformly cover the stop layer; forming a dielectric layer with a thickness larger than the height of metal structure on the buffer layer; performing a planarization process onto the dielectric layer surface; and forming the magnetic layer on the dielectric layer. The essential key point of this invention is that the sensitivity of the dielectric layer with respect to the stop layer is stronger than that of buffer layer, and the filling-trench capability of dielectric layer is better than that of buffer layer.
Patent TW-495913-B (TW)
Title: An interconnect structure of a semiconductor device with an air gap and method of manufacturing the same
Inventor: YANG WEON-SIK
IPC: H01L21/768
Filed: 2000-08-31
Granted: 2002-07-21
Abstract: The present invention provides an interconnect structure of a semiconductor device with an air gap and a method of manufacturing the same. In the invention, air gap is formed in between the metal interconnects formed by using the damascene type. The invention comprises the followings: the step for forming a sacrifice layer on a semiconductor substrate containing a bottom layer; the step for conducting a pattern treatment onto a specified part of the sacrifice layer; the step for burying a conducting layer into the space in between the sacrifice layers to form the interconnect; the step for selectively removing the sacrifice layer; and the step for forming interlayer insulation so as to form air gap in the space in between the interconnects.
Patent TW-469626-B (TW)
Title: Semiconductor integrated device and the detection method of voltage falling of the integrated circuit and the correction method of voltage falling thereof
Inventor: TAKABAYASHI TSUTOMU
IPC: H03K5/159
Filed: 2000-10-11
Granted: 2001-12-21
Abstract: To detect the power voltage falling of the integrated circuit, and correct it appropriately. It comprises: a detection cell 4 allocated at the predetermined position of the power line 3 in the semiconductor integrated device 10 to detect the power voltage at this predetermined position; a detection circuit 7 for detecting the power voltage falling detected by the detection cell 4; and a connection wiring 6 connecting the detection cell 4 and the detection circuit 7, the detection cell 4 outputs the detected power voltage to the detection circuit 7.
Patent TW-494625-B (TW)
Title: Piezoelectric resonator
Inventor: ANDO AKIRA
IPC: H03H9/17
Filed: 2000-10-25
Granted: 2002-07-11
Abstract: A piezoelectric resonator capable of achieving a compact oscillator with high performance having high thermal resistance and a narrow tolerance is provided. A piezoelectric resonator includes an element body comprising an excitation layer and a non-excitation layer. One vibration electrode is formed on the surface of the excitation layer and another vibration electrode is formed between the excitation layer and the non-excitation layer. The two vibration electrodes are formed from opposing ends of the excitation layer toward the central portion thereof so as to oppose each other at the central portion of the excitation layer. On end-faces of the element body, end-face electrodes are formed so as to be connected to the vibration electrodes, respectively.
Patent TW-571305-B (TW)
Title: Record carrier of a read-only type and read device
Inventor: HEEMSKERK JACOBUS PETERUS JOSE
IPC: G11B7/007
Filed: 2000-11-16
Granted: 2004-01-11
Abstract: A record carrier of a read-only type has information in a track. The information is subdivided in addressable blocks and a number of blocks constitute an information unit. The information unit is the minimal unit for error correction according to a format for writable record carriers. On the read-only record carrier a linking area is provided between information units. This has the advantage that compatibility with recordable record carriers is improved.
Patent TW-521099-B (TW)
Title: High-strength, high-toughness martensitic stainless steel sheet, method of inhibiting cold-rolled steel sheet edge cracking, and method of producing the steel sheet
Inventor: HIRAMATSU NAOTO
IPC: C21D6/00
Filed: 2001-01-10
Granted: 2003-02-21
Abstract: A high-strength, high-toughness martensitic stainless steel sheet has a chemical composition comprising, in mass percent, more than 0.03 to 0.15% of C, 0.2 to 2.0% of Si, not more than 1.0% of Mn, not more than 0.06% of P, not more than 0.006% of S, 2.0 to 5.0% of Ni, 14.0 to 17.0% of Cr, more than 0.03 to 0.10% of N, 0.0010 to 0.0070% of B, and the balance of Fe and unavoidable impurities and has an A value of not less than -1.8, where A value =30(C+N)-1.5Si+0.5Mn+Ni-1.3Cr+11.8. The suitability of the steel sheet as a gasket material is enhanced by producing it to include not less than 85 vol% of martensite phase and to have a spring bending elastic limit Kb0.1 after application of tensile strain of 0.1% of not less than 700 N/mm<SP>2</SP>. Edge cracking during cold rolling is inhibited by conducting cold rolling after subjecting the hot-rolled sheet to 600-800 DEG C x 10 hr or less intermediate annealing to impart a steel hardness of not greater than Hv 380.
Patent TW-I290656-B (TW)
Title: Colour switch
Inventor: FUENFSCHILLING JUERG
IPC: G02F1/1347
Filed: 2001-02-14
Granted: 2007-12-01
Abstract: A colour switch for selectively switching between colour bands for use in projection optics and in direct view optics has fewer and thinner layers than in the prior art, but exhibits equal or better colour purity and light efficiency. The filter has a first filter section (2-8) for selectively blocking green light and including a cholesteric filter (2), a quarter wave plate (4) and a liquid crystal switch (6). The filter has a second filter section (10-22) for selectively blocking blue and/or red light including a stack of retarder elements (10, 14, 16, 20) and liquid crystal switches (12, 18), preferably DHF switches. The parameters of the filter are determined by an optimisation process including minimising a cost function G with respect to the parameters of the second filter section. Polarising element 8 may be positioned in front of the stack, and of a type which does not absorb radiation.
Patent TW-490349-B (TW)
Title: High-precision low-cost crack initiation method for laser scribing and cutting of brittle materials
Inventor: HSIEH JOHN
IPC: B23K26/00
Filed: 2001-03-06
Granted: 2002-06-11
Abstract: A method for initiating a laser scribe line on a glass workpiece comprises pressing an indenter against the workpiece to form a crack initiation mark having an aspect ratio of about 7. The crack initiation mark permits one to form scribe lines with precise locations and positions. In one embodiment, this method is used to make glass substrates for magnetic disk manufacturing. Because of the precise positioning of the laser scribe line, it is unnecessary to engage in extensive edge polishing after scribing and cutting.
Patent TW-498276-B (TW)
Title: Method and system for fast on site deployment of computer equipment in a network computer environment
Inventor: RAYMOND THIERRY
IPC: G06F9/445
Filed: 2001-03-30
Granted: 2002-08-11
Abstract: In a network computer system including computer units connected through a network, a method for rapid installation of a unit includes the following steps: (a) at a unit manufacturing stage: preparing at least one master disk image containing a plurality of computer programs and associated parameters, assigning to each master disk image a unique software code value representative of a software configuration corresponding to the contents of said master disk image; during the manufacture of each unit, loading into a mass memory thereof the contents of a selected master disk image and providing on said unit readable information representative of the software code value assigned to said selected master disk image; (b) when a unit is to be installed on the network: determining a software code value identifying the software configuration to be used in said computer unit, by using said readable information, selecting from a set of units one having said software code value, connecting said selected unit to the network, and performing a soft installation of said unit involving communication between said unit and a remote configuration server of the network and providing to the unit data for finely tuning the contents of the mass memory of the unit.
Patent TW-548091-B (TW)
Title: Vacuum cleaner
Inventor: TANAKA TAKASHI
IPC: A47L9/28
Filed: 2001-04-17
Granted: 2003-08-21
Abstract: The object of the present invention is to surely guide a vacuum cleaner body which is mounted on a charging base to a correct mounting location while suppressing the generation of scars on the external surface. The solution of the present invention is that a guide rib projects from a body of the vacuum cleaner which is guided by a guide surface 24 of a charging base 2. Then, the vacuum cleaner is constituted in such a manner that when the vacuum cleaner body 1 is placed on the charging base 2, the guide rib comes into contact with the guide surface 24 and is guided. In this case, scars which are generated accompanying the guiding action are concentrated to the end edge of the guide rib 18, and are prevented from being generated on the external surface of the vacuum cleaner body 1.
Patent TW-483048-B (TW)
Title: Method for forming photoresist with anti-etching effect
Inventor: CHANG CHING-YU
IPC: H01L21/027
Filed: 2001-05-14
Granted: 2002-04-11
Abstract: There is provided a method for forming photoresist with anti-erosive effect, which comprises: providing a substrate; forming a pattern with photoresist on the substrate; placing the substrate and the photoresist in a low-pressure environment; irradiating the photoresist by electronic beams to cure at least part of the photoresist. The present invention is typically performed before the etching procedure. However, it also includes to perform the etching procedure while irradiating the photoresist by electronic beams, or to alternatively perform the etching procedure and irradiate the photoresist by electronic beams.