Judul: Diferensiasi Genetik Populasi Udang Jerbung (Fenneropenaeus merguiensis De Man) dari Banten, Jawa Tengah, Bengkulu, Kalimantan Barat, dan Nusa Tenggara Barat
Abstrak: Genetic differentiation (phenotype and genotype) of population is need as base information for banana prawn breeding program. Information of genetic differentiation banana prawn in Indonesia is few, so this study was purposed for determine morphologycally and molecular different banana prawn (Fenneropenaeus merguiensis) from Banten, Central Java, Bengkulu, West Kalimantan, and West Nusa Tenggara. Morphologycally measurement with morphometric method was applied for determine phenotype, and mitochondrial DNA 16S ribosomal RNA analysis with sequencing method for determine genotype different. Results of analysis showed that there were morphometrically genetic variations among banana prawn population studied. Banana prawn from West Kalimantan had highest variation of morphology and Bengkulu lowest variation. Results of Cluster analysis indicated that two main clusters were found, i.e. banana prawn from West Kalimantan, West Nusa Tenggara and Bengkulu as the first cluster, Central Java and Banten as the second cluster. PCR amplification and sequencing of 16S-rRNA mitochondrial DNA region were performed using 5’-CGCCTGTTTAAC-AAAAACAT-3’ and 5’-CCGGTCTGAACTCAGATCATGT- 3’. Analysis of homology sequences of 16S-rRNA mtDNA show that banana prawn used in this study was Fenneropenaeus merguiensis. Result of family relationship analysis indicated that 5 population of banana prawn can divided into 2 groups, i.e. West Kalimantan and group of Bengkulu-Banten-Central Java-NTB. Banana prawn from West Kalimantan and Bengkulu has specific sequences at 5’ terminal, ACTGACT and C-GAC, respectively. Those sequences may be able to be use as a marker in the breeding program of banana prawn in Indonesia.
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Judul: Analisis Keragaman Genetik Ikan Baung (Hemibagrus nemurus) dengan Menggunakan Teknik PCR-RFLP pada DNA Mitokondria
Abstrak: This research has an objective to analyze the genetic variation among four Hemibagrus nemurus population by using PCR-RFLP of D-loop region of mitochondrial DNA. H. nemurus were collected from Cirata, Serayu, Jambi and Bogor. Four restriction enzymes were used to digest D-loop region mt-DNA, i.e. MboI, HaeIII, AluI and RsaI. Based on this analysis, these four population have seven composite haplotypes. The highest haplotype diversity was found at the population from Jambi. Population from Serayu has just one composite haplotype indicating that this population has the same ancestor. Population from Cirata and from Bogor has the same composite haplotype indicating that there was probably migration between these two populations.
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Judul: Elektrodeposisi Film Tipis Semikonduktor Cu2ZnSnS4 (CZTS) pada Substrat Kaca ITO
Abstrak: Semiconductor Cu2ZnSnS4 (CZTS) thin film that can be used as absorber layers on solar cell module was made via electrodeposition method. CZTS thin film was electrodeposited on the surface of a silicate glass coated with a thin layer of indium tin oxide (ITO). Deposition process was done using potentiostatic mode at room temperature with a potential of 1.05 V for 30, 45, and 60 minutes, followed with annealing the film at 2 different temperatures, 500 ºC using furnace and 180 ºC using hot plate, both treatments for 45 minutes in N2/H2S atmosphere. The X-ray difractograms were analyzed using Match 2 program and showed that the CZTS thin films had kesterit crystalline structure, with a low percentage of CZTS phase. The thin film also contained secondary phases such as Cu2S, ZnS, and SnS. The obtained CZTS thin films had a thickness between 1.039 and 1.676 μm. Absorption study showed that the band gap energy of CZTS thin films which was annealed using furnace ranged from 1.50 to 1.52 eV, whereas that annealed using the hot plate was not observed. The band gap energy value showed that CZTS thin films can be used as sunlight absorber layers on solar cell. The formation of CZTS crystal film on this investigation was effectively performed using furnace annealing process at a temperature of 500 ºC with deposition time of 45 minutes.
Keyword: Thin film, Electrodeposition, Cu2ZnSnS4