Judul: Evaluasi Ragam Genetik Ikan Nila Hasil Seleksi BEST F4, F5, dan Nirwana II Berdasarkan Analisis RAPD dan Truss Morfometrik
Abstrak: Genetic variability is important basic in the selection activity for improving the genetic quality of population. The aim of this research was to analyze the genetic variability of Nile tilapia BEST F4, F5 and Nirwana II using 3 molecular markers of RAPD (OPA-02, OPA-03, OPC-05) and 21 characters of truss morphometric. The results showed that the Nile population of BEST F5 has polymorphism 48% and heterozygosity 0,1925 the highest than F4 and Nirwana II. The genetic distance relationship of Nile BEST F4, F5 and Nirwana II ranged from 0,0962 to 0,1752 and based on the comparison of Fst indicated the significant differences between populations nile BEST F4 and Nirwana II (p≤0.05). The relationship of 21 phenotype of morphometric character described the similarity among population except 6 characters (B6, B3, B1, A3, C1, D6) and dendrograme grouped Nile BEST F4 and F5 in different cluster with Nirwana II population.
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Judul: Karakteristik genotipe hibrida hasil persilangan 3 strain ikan nila Oreochromis niloticus dengan metode Random Amplified Polymorphic DNA (RAPD)
Abstrak: Objectives of this study were to observe the genetic variability and relationship among hybrids of three strains (BEST, Nirwana, and Red NIFI) using Random Amplified Polymorphic DNA (RAPD). The results showed that hybridization enabled to increase genetic variability respectedly on progeny between male Nirwana with female BEST (27.93%) as well as between male Nirwana with female Red NIFI (27.23%). Based on relationship analysis there were indication that Nirwana and Red NIFI were closer to the hybrid groups, compared to BEST one. The greatest genetic distance was the hybrids of Nirwana x BEST (0.6).
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Judul: Elektrodeposisi Film Tipis Semikonduktor Cu2ZnSnS4 (CZTS) pada Substrat Kaca ITO
Abstrak: Semiconductor Cu2ZnSnS4 (CZTS) thin film that can be used as absorber layers on solar cell module was made via electrodeposition method. CZTS thin film was electrodeposited on the surface of a silicate glass coated with a thin layer of indium tin oxide (ITO). Deposition process was done using potentiostatic mode at room temperature with a potential of 1.05 V for 30, 45, and 60 minutes, followed with annealing the film at 2 different temperatures, 500 ºC using furnace and 180 ºC using hot plate, both treatments for 45 minutes in N2/H2S atmosphere. The X-ray difractograms were analyzed using Match 2 program and showed that the CZTS thin films had kesterit crystalline structure, with a low percentage of CZTS phase. The thin film also contained secondary phases such as Cu2S, ZnS, and SnS. The obtained CZTS thin films had a thickness between 1.039 and 1.676 μm. Absorption study showed that the band gap energy of CZTS thin films which was annealed using furnace ranged from 1.50 to 1.52 eV, whereas that annealed using the hot plate was not observed. The band gap energy value showed that CZTS thin films can be used as sunlight absorber layers on solar cell. The formation of CZTS crystal film on this investigation was effectively performed using furnace annealing process at a temperature of 500 ºC with deposition time of 45 minutes.
Keyword: Thin film, Electrodeposition, Cu2ZnSnS4