Judul: Identifikasi Keragaman Gen Growth Hormone Releasing Hormone (Ghrh) Pada Kerbau Lokal (Bubalus Bubalis) Dengan Metode Pcr-Rflp
Abstrak: GHRH is a hypothalamic hormone which stimulates growth hormone secretion in the pituitary gland. The objective of this study was to identify polymorphisms Growth Hormone Releasing Hormone (GHRH) gene of Indonesian buffalo’s. A total of 320 blood samples from Indonesian buffalo were used to determined polymorphism using PCR-RFLP method. The polymorphism of GHRH gene that spanned within exon 2 and exon 3 was amplified, and their mutation was detected using endonuclease HaeIII. In this study, there were found to be three GHRH/HaeIII genotype (AA genotype 0%, AB genotype 36% and BB genotype 64%) determined by two alleles, A (18%) and B (82%). The frequency of A allele was found 15% for Semarang population, 19% for Mataram population, 2% for Medan population and 40% for Banten population. The frequency of B allele was found 85% for Semarang population, 81% for Mataram population, 98% for Medan population and 60% for Banten population. The observed heterozygosis value were different among populations. The highest heterozygosis (h) 0,485 for Banten population and the lowest was 0.037 for Medan population and the average heterozygosis for all populations (H) detected was 0.270. Index fixation value of GHRH gene showed there was not fixed into one gene type (Fski 0). The smallest genetic distance value of GHRH gene was found between Semarang and Mataram population (0.001) and highest between Medan and Banten population (0.202). Keywords: Buffallo, GHRH gene, PCR-RFLP.
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Judul: Identifikasi Keragaman Gen Hormon Pertumbuhan (GH-MspI) pada Kerbau Lokal (Bubalus bubalis)
Abstrak: The aim of this study was to identify polymorphism of buffalo’s growth hormone (GH-MspI) gene that localized in intron 3 using Polymerase Chain Reaction (PCR) – Restriction Fragment Length Polymorphism (RFLP) method. Total of the blood samples were 320 which is from Semarang, Medan, Mataram and Banten. Polymorphism in 261 samples were identified and revealed three genotypies that are 223 bp and 104 bp for the +/+ genotype; 327 bp, 222 bp and 104 bp for the +/- genotype and 327 bp (no digestion) for the -/- genotype. Frequencies of the +/+ genotype and + allele were the highest in whole populations. Frequencies were 0.805 for +/+ genotype, 0.146 for +/- genotype, and 0.05 for -/- genotype. The frequency of + allele was 0.878. The frecuencies of + allele and +/+ genotype were the highest. The highest heterozygocities was 0.562 for Semarang population and the lowest was 0.093 for Banten population and the average heterozygocities for all populations detected was 0.370. Index fixation value of GH gene showed there was no gene fixation in all populations. Keywords: Buffalo, GH-MspI gene, PCR-RFLP
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Judul: Elektrodeposisi Film Tipis Semikonduktor Cu2ZnSnS4 (CZTS) pada Substrat Kaca ITO
Abstrak: Semiconductor Cu2ZnSnS4 (CZTS) thin film that can be used as absorber layers on solar cell module was made via electrodeposition method. CZTS thin film was electrodeposited on the surface of a silicate glass coated with a thin layer of indium tin oxide (ITO). Deposition process was done using potentiostatic mode at room temperature with a potential of 1.05 V for 30, 45, and 60 minutes, followed with annealing the film at 2 different temperatures, 500 ºC using furnace and 180 ºC using hot plate, both treatments for 45 minutes in N2/H2S atmosphere. The X-ray difractograms were analyzed using Match 2 program and showed that the CZTS thin films had kesterit crystalline structure, with a low percentage of CZTS phase. The thin film also contained secondary phases such as Cu2S, ZnS, and SnS. The obtained CZTS thin films had a thickness between 1.039 and 1.676 μm. Absorption study showed that the band gap energy of CZTS thin films which was annealed using furnace ranged from 1.50 to 1.52 eV, whereas that annealed using the hot plate was not observed. The band gap energy value showed that CZTS thin films can be used as sunlight absorber layers on solar cell. The formation of CZTS crystal film on this investigation was effectively performed using furnace annealing process at a temperature of 500 ºC with deposition time of 45 minutes.
Keyword: Thin film, Electrodeposition, Cu2ZnSnS4