Judul: Serangan Ganoderma sp. Penyebab Penyakit Akar Merah di Hutan Pendidikan Gunung Walat(HPGW), Sukabumi, Jawa Barat
Abstrak: Gunung Walat University Forest(GWUF) is known as education and research area. GWUF has a lot of homogen areas,therefore these area was attacked easily by disease, and of course this red root disease. Red root disease is caused by Ganoderma sp. and this disease can spread for plant to another plant in a lot of ways. The objectives of the study were to review the spreading of Ganoderma sp. that cause red root disease which attack the forest tree in GWUF and also to identified spesies of Ganoderma sp. in visual way. The results showed that there wereGanoderma sp. in GWUF which spread in a lot of areas and also there are 7 spesies of Ganoderma sp. in Agathis and Pinus bloks, 5 of them are attack Agathis blok and 2 another spesies are attack Pinus bloks. Each Ganoderma sp. of Ganoderma sp. has different characteristic of its morphology.
Keyword: red root disease, Pinus sp., GWUF, Ganoderma sp., Agathis sp

Judul: Potensi Pleurotus sp. untuk Pengendalian Ganoderma sp. Penyebab Penyakit Busuk Akar Merah pada Pohon Kehutanan
Abstrak: Hutan adalah kawasan yang ditumbuhi tumbuhan-tumbuhan yang berfungsi sebagai sistem penyangga kehidupan. Keberadaan hutan sangat penting, maka diperlukan perlindungan hutan, salah satunya dari penyakit hutan. Hutan Tanaman Industri (HTI) adalah hutan yang rentan terhadap timbulnya penyakit hutan. Salah satu penyakit hutan adalah penyakit busuk akar merah. Penyakit busuk akar merah disebabkan oleh jamur Ganoderma sp.. Salah satu pengendalian penyakit busuk akar merah adalah dengan pengendalian secara hayati. Pengendalian secara hayati dapat dilakukan dengan jamur pelapuk kayu yaitu Pleurotus sp.. Tujuan penelitian adalah untuk 1) mengetahui uji antagonis Pleurotus sp. terhadap Ganoderma sp. pada media PDA, 2) untuk mengetahui uji antagonis Pleurotus sp. terhadap Ganoderma sp. pada media serbuk gergaji kayu sengon dan 3) untuk mengetahui pertumbuhan Ganoderma sp. dan Pleurotus sp. pada fase vegetatif dan fase generatif. Hasil penelitian ini menunjukkan bahwa Pleurotus sp. dapat mengendalikan Ganoderma sp. dengan persen penghambatan sebesar 34.6%. Uji antagonis Pleurotus sp. terhadap Ganoderma sp. pada media serbuk gergaji kayu sengon menunjukkan interaksi kompetisi dan pertumbuhan miselium Ganoderma sp. menurun, terlihat dari zona batas yang terbentuk. Persen penghambatan tertinggi dari ke tiga perlakuan adalah perlakuan III sebesar 86%. Kompetisi yang terjadi antara Ganoderma sp. dan Pleurotus sp. menyebabkan pertumbuhan tubuh buah Ganoderma sp. yang lambat.
Keyword: Ganoderma sp., hutan, Pleurotus sp., pengendalian, uji antagonis

Judul: Elektrodeposisi Film Tipis Semikonduktor Cu2ZnSnS4 (CZTS) pada Substrat Kaca ITO
Abstrak: Semiconductor Cu2ZnSnS4 (CZTS) thin film that can be used as absorber layers on solar cell module was made via electrodeposition method. CZTS thin film was electrodeposited on the surface of a silicate glass coated with a thin layer of indium tin oxide (ITO). Deposition process was done using potentiostatic mode at room temperature with a potential of 1.05 V for 30, 45, and 60 minutes, followed with annealing the film at 2 different temperatures, 500 ºC using furnace and 180 ºC using hot plate, both treatments for 45 minutes in N2/H2S atmosphere. The X-ray difractograms were analyzed using Match 2 program and showed that the CZTS thin films had kesterit crystalline structure, with a low percentage of CZTS phase. The thin film also contained secondary phases such as Cu2S, ZnS, and SnS. The obtained CZTS thin films had a thickness between 1.039 and 1.676 μm. Absorption study showed that the band gap energy of CZTS thin films which was annealed using furnace ranged from 1.50 to 1.52 eV, whereas that annealed using the hot plate was not observed. The band gap energy value showed that CZTS thin films can be used as sunlight absorber layers on solar cell. The formation of CZTS crystal film on this investigation was effectively performed using furnace annealing process at a temperature of 500 ºC with deposition time of 45 minutes.
Keyword: Thin film, Electrodeposition, Cu2ZnSnS4