Judul: Karakteristik genotipe hibrida hasil persilangan 3 strain ikan nila Oreochromis niloticus dengan metode Random Amplified Polymorphic DNA (RAPD)
Abstrak: Objectives of this study were to observe the genetic variability and relationship among hybrids of three strains (BEST, Nirwana, and Red NIFI) using Random Amplified Polymorphic DNA (RAPD). The results showed that hybridization enabled to increase genetic variability respectedly on progeny between male Nirwana with female BEST (27.93%) as well as between male Nirwana with female Red NIFI (27.23%). Based on relationship analysis there were indication that Nirwana and Red NIFI were closer to the hybrid groups, compared to BEST one. The greatest genetic distance was the hybrids of Nirwana x BEST (0.6).
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Judul: Evaluasi Ragam Genetik Ikan Nila Hasil Seleksi BEST F4, F5, dan Nirwana II Berdasarkan Analisis RAPD dan Truss Morfometrik
Abstrak: Genetic variability is important basic in the selection activity for improving the genetic quality of population. The aim of this research was to analyze the genetic variability of Nile tilapia BEST F4, F5 and Nirwana II using 3 molecular markers of RAPD (OPA-02, OPA-03, OPC-05) and 21 characters of truss morphometric. The results showed that the Nile population of BEST F5 has polymorphism 48% and heterozygosity 0,1925 the highest than F4 and Nirwana II. The genetic distance relationship of Nile BEST F4, F5 and Nirwana II ranged from 0,0962 to 0,1752 and based on the comparison of Fst indicated the significant differences between populations nile BEST F4 and Nirwana II (p≤0.05). The relationship of 21 phenotype of morphometric character described the similarity among population except 6 characters (B6, B3, B1, A3, C1, D6) and dendrograme grouped Nile BEST F4 and F5 in different cluster with Nirwana II population.
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Judul: Pembuatan Film Tipis Cu2ZnSnS4 sebagai Lapisan Penyerap Cahaya pada Sel Surya Menggunakan Metode Elektrodeposisi
Abstrak: Thin film of Cu2ZnSnS4 (CZTS) is an alternative semiconductor used as light absorber layer on solar cell. CZTS can replace silicon that commonly used as commercial semiconductor. The advantage of using CZTS as absorber layer is due to the abundance of its chemical composer on earth, and its high value of absorption coefficient. The absorber layer was made by using electrodeposition method on ITO glass substrates. The films were deposited at room temperature using potentiostatic mode with a potential of –1.05 V for 30, 45, and 60 minutes. After that, the films were annealed at two different temperatures, 180 ºC and 500 °C, for 45 minutes in N2/H2S atmosphere. Based on X-ray diffraction analysis, the polycrystalline thin film obtained fall into kesterite crystal phase. This type of crystal was obtained when the CZTS was annealed at 500 °C in H2S/N2 atmosphere. The value of optical band gap energy for the CZTS thin film was 2.2 eV with the film thickness about 1.228–6.366 μm. The sample of CZTS with electrodeposition time of 45 minutes and annealing temperature of 500 °C showed the best result and in conformity with absorber layers criteria for solar cells.
Keyword: semiconductor, ITO glass, CZTS thin film, electrodeposition