Judul: Identifikasi Keragaman Gen  Pituitary-Specific  Positive Transcription Factor 1 (Pit1) pada Kerbau Lokal (Bubalus bubalis) dan  Sapi Friesian-Holstein
Abstrak: Pit-1, POU1F1 or GHF1 has been identified as the pituitary specific transcription factor that regulates the expression of the growth hormone (GH) and Prolactin (PRL) genes in the anterior pituitary. The Use of polymorphic markers in breeding programmes could make selection more accurate and efficient. A total of 320 individuals from four Indonesian buffalo population and 45 individual FH from nine population were genotyped for the Pit1|Hinf1 gene polymorphism by the polymerase chain reaction and restriction fragment length polymorphism (PCR- RFLP). The gene polymorphism was detected only in FH cattle. The frequency of genotype AA is 2%, AB is 44%, BB is 53%. The frequency of A allel is 25% and B allel is 75 %, but no polymorphism were detected in 320 Indonesia buffalo population.
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Judul: Identifikasi Keragaman Gen Pituitary-Spesific Positive Transcription Factor 1 (Pit1|StuI) Exon 3 pada Sapi FH dengan Metode PCR-RFLP
Abstrak: Pituitary-Specific Positive Transcription Factor 1 (Pit1, POUIF1 or GHF1) gene is a member of the tissue-specific POU-containing transcription factor family. The expression of Pit1 in mammalian pituitary gland is to control the transcription of the genes encoding growth hormone, prolactin (PRL) and the subunits of thyroid-stimulating hormone. This study was aimed to identify polymorphism of the pituitary specific positive transcription factor 1 (Pit1) exon 3 gene in Holstein Friesian (HF) cattle. Total number of samples were 286 heads from BIB Lembang (14), BBIB Singosari (25), BPPT-SP Cikole (81), KPSBU Pasir Kemis (93), and KPSBU Cilumber (73) using PCR-RFLP method by StuI restriction enzyme. Genotyping the Pit1 exon 3 gene resulted in two alleles, namely A and C , with three genotypes, namely AA, AC, and CC. The average frequency of the C allele followed by HF cattle in five places was higher (0,916) than the A allele (0,084). CC genotype had the highest average frequency (0,874) than the AC genotype (0,084) and the AA genotype (0,042). Chi-Square analysis showed that HF from BBIB Singosari were in Hardy-Weinberg (HW) equilibrium (2 < 2(0,05)), contrast to HF from BPPT Cikole and KPSBU Pasir Kemis (2 > 2(0,05)) and HF in BIB Lembang and KPSBU Cilumber could not be calculated equilibrium HW. The average values of heterozigosity observation (Ho) for HF studied were under the values of heterozigosity expectation (He), therefore the genetic variation of the Pit1|StuI exon 3 gene was low in these cattles.
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Judul: Elektrodeposisi Film Tipis Semikonduktor Cu2ZnSnS4 (CZTS) pada Substrat Kaca ITO
Abstrak: Semiconductor Cu2ZnSnS4 (CZTS) thin film that can be used as absorber layers on solar cell module was made via electrodeposition method. CZTS thin film was electrodeposited on the surface of a silicate glass coated with a thin layer of indium tin oxide (ITO). Deposition process was done using potentiostatic mode at room temperature with a potential of 1.05 V for 30, 45, and 60 minutes, followed with annealing the film at 2 different temperatures, 500 ºC using furnace and 180 ºC using hot plate, both treatments for 45 minutes in N2/H2S atmosphere. The X-ray difractograms were analyzed using Match 2 program and showed that the CZTS thin films had kesterit crystalline structure, with a low percentage of CZTS phase. The thin film also contained secondary phases such as Cu2S, ZnS, and SnS. The obtained CZTS thin films had a thickness between 1.039 and 1.676 μm. Absorption study showed that the band gap energy of CZTS thin films which was annealed using furnace ranged from 1.50 to 1.52 eV, whereas that annealed using the hot plate was not observed. The band gap energy value showed that CZTS thin films can be used as sunlight absorber layers on solar cell. The formation of CZTS crystal film on this investigation was effectively performed using furnace annealing process at a temperature of 500 ºC with deposition time of 45 minutes.
Keyword: Thin film, Electrodeposition, Cu2ZnSnS4