Judul: Bogor agricultural university student’s characteristics based on their national examination score and gpa
Abstrak: National examination (un) has been established as a standard to pass high school since 2002 compentency during high school. It indicated an assumption that good un score would provide good achievement in college as well. Student’s achievement at university is indicated by gpa (grade point average). Theoretically, un score and gpa should have high positive correlation. However, this is not automatically true. In 2010, more than 30% student who had high un score got gpa tpb less than 2.50. This percentage tends to decrease in 2011 and 2012. By using pearson correlation test, there was a significance correlation between un score and gpa tpb even the coefficient was weak and positif. Based on multiple correspondence analysis in the last three yearswith a purpose to improve the quality of education in indonesia and measure student’s, characteristics of student who had high un score and high gpa tpb were from faculty fateta, fmipa, fem, and fema, from department with high popularity level such as itp, stk, agb, ilkom, gizi, tin, sil, and eksyar, and came from banten, dki jakarta, and west java. Whereas the characteristics students who had high un score but got low gpa tpb were from veterinary faculty, enrolled ipb through utmi, and had higher education and higher income family background.
Keyword: gpa, multiple correspondence analysis, un score

Judul: Analisis Biplot untuk Memetakan Provinsi Berdasarkan Prestasi Mahasiswa TPB IPB dan Nilai Ujian Nasional
Abstrak: Quality description of schools in academic field is supposed to be seen from attainment of national exam (UN) score. Students’ achievement in college can be described with acquisition of high GPA. Provincial mapping can be used to obtain a description of its position in accordance with the achievement of UN score and students’ achievement in college. The data used in this study for provincial mapping are TPB IPB students’ achievement in 2007/2008 academic year. Provincial mapping is conducted by using biplot analysis. Preliminary data exploration is conducted by using boxplot, GPA-UN plot, and Pearson’s correlation matrix. The correlation between UN score and GPA, which is 0.41**, is highly significant but not large enough to measure successfulness in college. In this study, biplot analysis can explain 74.56% of data variability. Based on the proximity among provinces and the interrelationship of provinces with variables used, these provinces can be grouped into nine groups. This grouping is expected to provide informations on advantages and disadvantages of each province in order to improve its educational quality.
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Judul: Elektrodeposisi Film Tipis Semikonduktor Cu2ZnSnS4 (CZTS) pada Substrat Kaca ITO
Abstrak: Semiconductor Cu2ZnSnS4 (CZTS) thin film that can be used as absorber layers on solar cell module was made via electrodeposition method. CZTS thin film was electrodeposited on the surface of a silicate glass coated with a thin layer of indium tin oxide (ITO). Deposition process was done using potentiostatic mode at room temperature with a potential of 1.05 V for 30, 45, and 60 minutes, followed with annealing the film at 2 different temperatures, 500 ºC using furnace and 180 ºC using hot plate, both treatments for 45 minutes in N2/H2S atmosphere. The X-ray difractograms were analyzed using Match 2 program and showed that the CZTS thin films had kesterit crystalline structure, with a low percentage of CZTS phase. The thin film also contained secondary phases such as Cu2S, ZnS, and SnS. The obtained CZTS thin films had a thickness between 1.039 and 1.676 μm. Absorption study showed that the band gap energy of CZTS thin films which was annealed using furnace ranged from 1.50 to 1.52 eV, whereas that annealed using the hot plate was not observed. The band gap energy value showed that CZTS thin films can be used as sunlight absorber layers on solar cell. The formation of CZTS crystal film on this investigation was effectively performed using furnace annealing process at a temperature of 500 ºC with deposition time of 45 minutes.
Keyword: Thin film, Electrodeposition, Cu2ZnSnS4