Judul: IPB (Bogor Agricultural University)
Abstrak: Tujuan penelitian ini adalah untuk (1) mengetahui biotipe H. abortus isolat lapang yang menginfeksi sapi di beberapa daerah di Indonesia, (2) mengetahui beberapa sifat patogenitasnya pada hewan percobaan marmot dan (3) mengetahui respon marmot terhadap vaksin Brucella yang kemudian ditantang dengan 8- abortus. isolat lapang. Hipotesis yang akan diuji dalam penelitian ini adalah (1) biotipe B- abortus isolat lapang terdiri dari beberapa macam biotipe dan yang dominan adalah biotipe B, (2) berdasarkan tingkat virulensinya kebanyakan isolat lapang tergolong galur virulen dan (3) respon marmot terhadap vaksin Brucella yang kemudin ditantang dengan R. abortus isolat lapang lebih baik terhadap vaksin aktif dari pada vaksin inaktif.
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Judul: Pengembangan kandidat vaksin iradiasi Brucella abortus isolat lapang
Abstrak: Brucellosis is a strategic contagious animal disease in Indonesia, which is caused by Bru/:ella abortus (B. abortus). Brucellosis causes abortion, still birth, orchitis; arthritis, infertility and sterility lowering milk production. Eradication of cattle in many countries have been conducted by test and slaughter and vaccination programme. At the moment there are two vaccinations available to control bovine brucellosis; those are B. abortus S 19 and B. abortus RB51. One of the problems in the eradication is not enough a vaccine. The objective of this research was to develop irradiated brucellosis vaccine from B. abortlls local isolate through isolation, identification and biotyping B. abortus from field cases. Determination of B. abortus radiation dose and in vivo study was done in guinea pigs. The samples were collected from milk (Bandung, west Jawa), amnion fluids (diagnostic sample) and higroma fluids (Be1u, NIT). In this study we use three isolates that were SBDG-13C (milk), CAM-08/306 (amnion fluids), and CH09- BL (higroma fluids). Biotyping of the three isolates categorized as B. abortus biotype I. Standard curves of B. abortus was made by calculating bacteria cells number indirectly. Linear equation of the standard curve of SBDG- J3C; CAM- 08/306 and CH09-BL isolates were y = 7.2119x + 6.7723; y = 3.889lx + 7.5278 and y = 2.9829x + 7.9612 respectively (x is absorbance value and y is log number of cells/ml). Observation on the growth of the isolates after Gamma irradiation showed variation responses to the value LDso of isolate CAM-08/306, CH09-BL and SBDG-I3C were 13.5; 11.9, and 17.9 Gy, respectively. The in vivo study showed that the spleen of irradiation vaccinated guinea pigs was a swelling (splenomegaly) and contained 102 to 106 CFU bacteria. Based on the results, It seems likely that those three isolates have not been defined as candidate isolate for brucellosis vaccine.
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Judul: Elektrodeposisi Film Tipis Semikonduktor Cu2ZnSnS4 (CZTS) pada Substrat Kaca ITO
Abstrak: Semiconductor Cu2ZnSnS4 (CZTS) thin film that can be used as absorber layers on solar cell module was made via electrodeposition method. CZTS thin film was electrodeposited on the surface of a silicate glass coated with a thin layer of indium tin oxide (ITO). Deposition process was done using potentiostatic mode at room temperature with a potential of 1.05 V for 30, 45, and 60 minutes, followed with annealing the film at 2 different temperatures, 500 ºC using furnace and 180 ºC using hot plate, both treatments for 45 minutes in N2/H2S atmosphere. The X-ray difractograms were analyzed using Match 2 program and showed that the CZTS thin films had kesterit crystalline structure, with a low percentage of CZTS phase. The thin film also contained secondary phases such as Cu2S, ZnS, and SnS. The obtained CZTS thin films had a thickness between 1.039 and 1.676 μm. Absorption study showed that the band gap energy of CZTS thin films which was annealed using furnace ranged from 1.50 to 1.52 eV, whereas that annealed using the hot plate was not observed. The band gap energy value showed that CZTS thin films can be used as sunlight absorber layers on solar cell. The formation of CZTS crystal film on this investigation was effectively performed using furnace annealing process at a temperature of 500 ºC with deposition time of 45 minutes.
Keyword: Thin film, Electrodeposition, Cu2ZnSnS4