Judul: Profil Leukosit dan Rasio Neutrofil/Limfosit (N/L) pada Kerbau Lumpur (Bubalus bubalis) Betina Selama Dua Minggu Adaptasi Pasca Transportasi
Abstrak: The objective of this experiment was to study the total leukocyte counts, leukocyte differential counts, and neutrophil/lymphocyte (N/L) ratio of swamp buffaloes in two weeks adaptation of post-transportation. Four female swamp buffaloes aged 2 years old were used in this experiment. Blood samples were collected from jugularis vein every day for two weeks to determine the total leukocyte counts, leukocyte differential counts, and N/L ratio. Results of this study showed that the total leukocyte counts was 8.91-18.83×10³/μl. The neutrophil, eosinophil, monocyte, and lymphocyte counts were 4.87-10.41×10³/μl, 0.66-1.75×10³/μl, 0.11-0.58×10³/μl, and 2.98-6.21×10³/μl, respectively. The N/L ratio was 1.23-3.49. In conclusion, the average of N/L ratio is 1.5 for 4 buffaloes, which indicated that animals were in stress condition after transportation.
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Judul: Parasitemia dan Diferensial Leukosit Kerbau Perah (Bubalus bubalis) Akibat Parasit Darah di Kabupaten Tapanuli Utara, Sumatera Utara.
Abstrak: The purpose of this study was to determine percentage of blood parasite, parasitaemia based on sex category and differential of leucocyte in dairy buffaloes in North Tapanuli regency, North Sumatera. Blood samples were collected from 10 adult female buffaloes and 10 adult male buffaloes using blood smear method. Samples were processed in glass slide, stained with Giemsa 10% and observed using a microscope with 1000x. The parasitaemia were counted for every 500 red blood cells. Differential absolute of leucocyte were calculated with differential relative of leucocyte multiplied by total leucocyte count. The result showed buffaloes infections caused by Anaplasma sp., Theileria sp, and Babesia sp. The highest percentage were caused by triple infections 45% (Anaplasma sp., Theileria sp., Babesia sp.), followed by double infections 30% (Anaplasma sp., Theileria sp.), double infections 10% (Theileria sp., Babesia sp.), single infection 10% (Anaplasma sp.), and the lowest by single infection 5% (Theileria sp.). By the sex of mean value parasitaemia was not showed significantly different (p>0.05). single infection (Anaplasma sp.). Total Leucocyte count about single infection (Anaplasma sp), and lymphocyte count about single infection (Anaplasma sp.), double infections (Theileria sp., Babesia sp.),and triple infections (Anaplasma sp., Theileria sp., Babesia sp.) were showed significantly different (p<0.05).
Keyword: differential leucocyte, blood parasite, parasitaemia

Judul: Elektrodeposisi Film Tipis Semikonduktor Cu2ZnSnS4 (CZTS) pada Substrat Kaca ITO
Abstrak: Semiconductor Cu2ZnSnS4 (CZTS) thin film that can be used as absorber layers on solar cell module was made via electrodeposition method. CZTS thin film was electrodeposited on the surface of a silicate glass coated with a thin layer of indium tin oxide (ITO). Deposition process was done using potentiostatic mode at room temperature with a potential of 1.05 V for 30, 45, and 60 minutes, followed with annealing the film at 2 different temperatures, 500 ºC using furnace and 180 ºC using hot plate, both treatments for 45 minutes in N2/H2S atmosphere. The X-ray difractograms were analyzed using Match 2 program and showed that the CZTS thin films had kesterit crystalline structure, with a low percentage of CZTS phase. The thin film also contained secondary phases such as Cu2S, ZnS, and SnS. The obtained CZTS thin films had a thickness between 1.039 and 1.676 μm. Absorption study showed that the band gap energy of CZTS thin films which was annealed using furnace ranged from 1.50 to 1.52 eV, whereas that annealed using the hot plate was not observed. The band gap energy value showed that CZTS thin films can be used as sunlight absorber layers on solar cell. The formation of CZTS crystal film on this investigation was effectively performed using furnace annealing process at a temperature of 500 ºC with deposition time of 45 minutes.
Keyword: Thin film, Electrodeposition, Cu2ZnSnS4