Judul: Potensi gen bmpr-1b dan bmp-15 sebagai penciri untuk seleksi sifat prolifik pada domba ekor gemuk (DEG) Lombok
Abstrak: The Lomboknese fat tailed sheep (LFTS) is a local sheep that have been long time raised and well adapted to the extreme environments of Lombok island. The aim of this study was to identify the BMPR-1B and BMP-15 genes and their influences on the prolification of the LFTS. Polymorphism of BMPR-IB and BMP-15 genes were identified with restriction enzymes AvaII and HinfI. Data were analyzed based on allele frequencies and t test was applied to compare the mean values of litter size in different genotypes. The results of study showed that polymorphism of BMPR-1B gene resulted in three genotypes, namely : ++ (140 bp/140 bp), B+ (140 bp/109 bp/31 bp) and BB (109 bp/31 bp) with allele + and B frequencies were 0.839 and 0.161, respectively. While BMP-15 gene resulted in two genotypes, namely ++ (110 bp/110 bp) and G+ (141 bp / 110 bp) with allele G and + frequencies were 0.946 and 0.054, respectively. Chi-square test for confirming the Hardy-Weinberg equilibrium showed that both BMPR-1B and BMP-15 genes were in the equilibrium conditions. A highly significant difference (P<0.01) in the average of litter size in different genotypes was observed. The highest average of litter size was found in the genotype combination of the two genes (B+/G+), namely 1.781±0.123 lambs, while the lowest average was obtained in the genotype ++/++, namely 1.015 ± 0.063 lambs.
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Judul: Polimorfisme Gen Fekunditas (BMPR1B dan BMP15) pada Kambing Kacang, Samosir dan Muara.
Abstrak: Indonesia memiliki potensi keanekaragaman hayati yang tinggi. Salah satunya adalah kambing lokal. Beberapa kambing lokal di Indonesia memiliki sifat unggul, antara lain bersifat prolifik. Sifat prolifik ini dikendalikan oleh gen fekunditas, antara lain Bone Morphogenetic Protein Receptor 1B (BMPR1B), Bone Morphogenetic Protein 15 (BMP15) dan Growth Differentiation Factor 9 (GDF9). Gen BMPR1B yang dikenal sebagai FecB terletak pada kromosom 6 dan diekspresikan oleh sel oosit dan sel granulosa dalam ovarium. Mutasi pada FecB yang berkaitan dengan sifat prolifik adalah substitusi A746G yang menyebabkan substitusi asam amino Q249R. Adapun gen BMP15 yang dikenal sebagai FecX terletak di kromosom X dan hanya diekspresikan di dalam sel-sel oosit. Beberapa alel mutan pada gen BMP15 yang berhubungan dengan sifat prolifik adalah FecXI (Inverdale), FecXH (Hanna), FecXB (Belclare), FecXG (Galway), FecXL (Lacaune) dan FecXR (Rasa Aragonesa). Penelitian ini bertujuan untuk mengidentifikasi keragaman genetik gen fekunditas (BMPR1B dan BMP15) pada kambing Kacang, Samosir dan Muara menggunakan metode PCR-RFLP dan sekuensing nukleotida.
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Judul: Elektrodeposisi Film Tipis Semikonduktor Cu2ZnSnS4 (CZTS) pada Substrat Kaca ITO
Abstrak: Semiconductor Cu2ZnSnS4 (CZTS) thin film that can be used as absorber layers on solar cell module was made via electrodeposition method. CZTS thin film was electrodeposited on the surface of a silicate glass coated with a thin layer of indium tin oxide (ITO). Deposition process was done using potentiostatic mode at room temperature with a potential of 1.05 V for 30, 45, and 60 minutes, followed with annealing the film at 2 different temperatures, 500 ºC using furnace and 180 ºC using hot plate, both treatments for 45 minutes in N2/H2S atmosphere. The X-ray difractograms were analyzed using Match 2 program and showed that the CZTS thin films had kesterit crystalline structure, with a low percentage of CZTS phase. The thin film also contained secondary phases such as Cu2S, ZnS, and SnS. The obtained CZTS thin films had a thickness between 1.039 and 1.676 μm. Absorption study showed that the band gap energy of CZTS thin films which was annealed using furnace ranged from 1.50 to 1.52 eV, whereas that annealed using the hot plate was not observed. The band gap energy value showed that CZTS thin films can be used as sunlight absorber layers on solar cell. The formation of CZTS crystal film on this investigation was effectively performed using furnace annealing process at a temperature of 500 ºC with deposition time of 45 minutes.
Keyword: Thin film, Electrodeposition, Cu2ZnSnS4