Judul: Produksi dan kualitas susu kambing peranakan etawah (PE) pada kondisi tatalaksana yang berbeda
Abstrak: Milk production of goat influenced by breed, genetic, age and rearing management. In Indonesian breed, genetic and age of goats among dairy goat farm are almost the same, but the rearing management varied any the farm. Therefore it was needed to know effect of rearing management on milk production of using goat. A study was done for 2 month to observe effect of rearing management on milk production of Etawah grade goat at 4 dairy goat farms. The data were then analyzed using t – test for comparing the farms (Cordero : A, 700 m above sea level, Prima Fit : B, 350 m, Mr. Purwadi : C, 300 m and PT Gizi Dewata Utama : D, 500 m). The forage : concentrate ratios at each farm were 36 : 64, 40 : 60, 50 : 50 and 64 : 36 for A, B , C and D, respectively. From the results it was concludec that the best farms was D fam that had highest milk production dan best milk quality.
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Judul: Performa Kambing Peranakan Etawah Muda dan Produktivitas Induk Laktasi dengan Sistem Pemberian Pakan yang Berbeda di Lahan Pasca Galian Pasir
Abstrak: This study aimed to examine the effect of different feeding systems on post-mining of sand land performance of young Peranakan Etawah goat and lactation productivity of Etawah ewe The study used 12 goats (12,592 ± 1,326 kg) within 3-6 months of age. There were two factor of treatment. Treatment one was differences of eating time (W1 = 08.00 a.m to 04.00 p.m and W2 = 02.00 p.m to 04.00 p.m). Treatment two was type of feed (P1 = 100 g/day concentrate and forage, P2 = forage). Protein content of concentrate was 19,32% and forage affered ad libitum. The data were analyzed descriptevely for dry matter intake, feed eficiency and Income Over Feed Cost (IOFC) but the method for daily Body Weight Gain (BWG) used in this study was 2x2 factorial completely randomized design. The results showed that BWG of goats was significantly different among treatment (P<0,01). There was interaction betwent W & P trial. Daily BWG was significantly higher in trial W1 and P1 as well as IOFC with average daily BWG is 74,41 ± 11,89 and IOFC is Rp. 249.666,67. Subsequent study on the lactation productivity Etawah ewe of different feeding systems. This study used 15 goats within 10 goats in lactation two and 5 goats in lactation three. Treatment was differences type of feed (P1 = forage, P2 = forage and food industry waste). The data feed consumption were analyzed descriptevely. Data production and milk quality were analyzed using t test. Dry matter of milk was very significant higher (P<0,01) in ration added food industry waste than ration without food industry waste adition, while protein content and fat in milk was significant (P<0,05).
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Judul: Elektrodeposisi Film Tipis Semikonduktor Cu2ZnSnS4 (CZTS) pada Substrat Kaca ITO
Abstrak: Semiconductor Cu2ZnSnS4 (CZTS) thin film that can be used as absorber layers on solar cell module was made via electrodeposition method. CZTS thin film was electrodeposited on the surface of a silicate glass coated with a thin layer of indium tin oxide (ITO). Deposition process was done using potentiostatic mode at room temperature with a potential of 1.05 V for 30, 45, and 60 minutes, followed with annealing the film at 2 different temperatures, 500 ºC using furnace and 180 ºC using hot plate, both treatments for 45 minutes in N2/H2S atmosphere. The X-ray difractograms were analyzed using Match 2 program and showed that the CZTS thin films had kesterit crystalline structure, with a low percentage of CZTS phase. The thin film also contained secondary phases such as Cu2S, ZnS, and SnS. The obtained CZTS thin films had a thickness between 1.039 and 1.676 μm. Absorption study showed that the band gap energy of CZTS thin films which was annealed using furnace ranged from 1.50 to 1.52 eV, whereas that annealed using the hot plate was not observed. The band gap energy value showed that CZTS thin films can be used as sunlight absorber layers on solar cell. The formation of CZTS crystal film on this investigation was effectively performed using furnace annealing process at a temperature of 500 ºC with deposition time of 45 minutes.
Keyword: Thin film, Electrodeposition, Cu2ZnSnS4