Judul: Prosedur Pemilihan Deadhead Pada Penerbangan Internasional
Abstrak: Dibimbing oleh PRAPTO TRI SUPRIYO dan M. NUR AIDL ._ Masalah pairing awak penerbangan internasional me1iputi penugasan awak: pada penjadwa1an pesawat sedemikian sehingga biaya keseluruhan menjadi minimal dan aturan kerja yang berlaku dapat dipenuhi. Karakteristik dari penerbangan ini adalah peneroangan intemasional yang biasanya tidak beroperasi pada jadwal harlan. menyebabkan jarangnya penerbangan dan waktu istirahat yang panjang bagi a"'l3k. . Untuk menge1iminasi waktu istirahat panjang dan mengurangi biaya keseluruhan, sangatlah menguntungkan untuk melakukan deadhead awak, yaitu dengan menugaskan awak terbang sebagai pe!lumpang umuk rtlf'.lakukan tugas lain dengan utilitas yang lebih baik. Dalam tulisan ini, metodologi heuristic dibangun untuk mensembangkan solusi pairing awak melalui pemilihan yang efisien dari penerbangan deadhead. Metodologi ini menggunakan detennina.si solusi dual dari relaksasi program
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Judul: Penyelesaian Masalah Crew Pairing Maskapai Penerbangan dengan 0-1 Integer Programming
Abstrak: Crew pairing is a sequence of flights that begins from a crew base and ends at the same crew base that will be served by a member of crew. Determination of crew pairing is one part of the operational cost efficiency efforts on commercial airline. The purpose of this study is to minimize the number of crew pairing and the total waiting time between two flights (i.e., sit time). This problem is formulated as 0-1 Integer Programming. Implementation on the airline of Air Asia with 25 flights schedule within a period of one day provides 9 crew pairing with the total sit time 2075 minutes.
Keyword: crew pairing, crew scheduling, crew, airline

Judul: Elektrodeposisi Film Tipis Semikonduktor Cu2ZnSnS4 (CZTS) pada Substrat Kaca ITO
Abstrak: Semiconductor Cu2ZnSnS4 (CZTS) thin film that can be used as absorber layers on solar cell module was made via electrodeposition method. CZTS thin film was electrodeposited on the surface of a silicate glass coated with a thin layer of indium tin oxide (ITO). Deposition process was done using potentiostatic mode at room temperature with a potential of 1.05 V for 30, 45, and 60 minutes, followed with annealing the film at 2 different temperatures, 500 ºC using furnace and 180 ºC using hot plate, both treatments for 45 minutes in N2/H2S atmosphere. The X-ray difractograms were analyzed using Match 2 program and showed that the CZTS thin films had kesterit crystalline structure, with a low percentage of CZTS phase. The thin film also contained secondary phases such as Cu2S, ZnS, and SnS. The obtained CZTS thin films had a thickness between 1.039 and 1.676 μm. Absorption study showed that the band gap energy of CZTS thin films which was annealed using furnace ranged from 1.50 to 1.52 eV, whereas that annealed using the hot plate was not observed. The band gap energy value showed that CZTS thin films can be used as sunlight absorber layers on solar cell. The formation of CZTS crystal film on this investigation was effectively performed using furnace annealing process at a temperature of 500 ºC with deposition time of 45 minutes.
Keyword: Thin film, Electrodeposition, Cu2ZnSnS4