PHOTOCATALYTIC FILM OF IRON OXIDE, ELECTRODE WITH SUCH A PHOTOCATALYTIC FILM, METHOD OF PRODUCING SUCH FILMS, PHOTOELECTROCHEMICAL CELL WITH THE ELECTRODE AND PHOTOELECTROCHEMICAL SYSTEM WITH THE CELL, FOR THE CLEAVAGE OF WATER INTO HYDROGEN AND OXYGEN

Abstract: The Photocatalytic film of semiconducting iron oxide (Fe2O3), contains an n-dopant, or a mixture of n-dopants, or a p-dopant or a mixture of p-dopants. Electrode consists of a substrate, with one or more films or photocatalytic arrangements of film of semiconducting n-doped or p-doped iron oxide (Fe2O3) e.g. on the surface of one side of the substrate or on the surface of different sides. The photoelectrochemical cell comprises electrodes with a film or with films of the n-doped or p-doped semiconducting iron oxide (Fe2O3). The semiconducting iron oxide (Fe2O3) film can be manufactured with a spray pyrolysis process or a sol gel process. The system for the direct cleavage of water with visible light, into hydrogen and oxygen the system comprises one or more of the photoelectrochemical cells with photocatalytic films. The system can be a tandem cell system, comprising the photoelectrochemical cell with the doped iron oxide (Fe2O3) film.

Description: Photocatalytic film of iron oxide, electrode with such a photocatalytic film, method of producing such films, photoelectro chemical cell with the electrode and photoelectrochemical system with the cell, for the cleavage of water into hydrogen and oxygen. Field of the invention The present invention relates to a photocatalytic film of iron oxide according to the preamble of claim 1. The invention relates further to an electrode with such a film, to a method of producing such a film and to the preparation of an electrode composed of iron oxide (Fe2U3) which upon illumination with light oxidizes water to oxygen with high quantum efficiency and a system with such an electrode in a tandem cell for water cleavage by visible light or sunlight. It is lαiown that iron(III) oxide is a semiconductor that produces oxygen from water under illumination, The reaction involves positive charge carriers (holes) generated in the valence band of the oxide by photo-excitation with light whose energy exceeds the band gap energy of the semiconductor. In contrast to most oxides the band gap of iron oxide is sufficiently small, i.e. 2.2 electron volts, to allow photo-excitation by visible light. This renders it attractive for use as a photo-catalyst in a system affording the cleavage of water by sunlight. However the photo-oxidation of water is notoriously inefficient on Fe2θ3 unless single crystal electrodes are employed, whose cost is prohibitively high for practical applications. The task of the present invention is to provide an improved photocatalytic film and an electrode with such a film or such films. Further it is an object of the invention to provide for a method for producing an improved pol-ycrystalline film of iron oxide that e.g. accomplishes the photo-oxidation of water in an efficient manner. Another object of the invention is an improved system for the cleavage of water. The film can be used in a tandem cell accomplishing the complete cleavage of water into hydrogen and oxygen by sunlight. The photocatalytic film of iron oxide is characterized by the features of the characterizing part of claim 1. The electrode according to the invention shows the features of the characterizing part of claim 5. The method of producing the film is characterized by the features of the characterizing part of claim 8. And the system for cleavage of water with visible light contains one or more of the photoelectrochemical cells according to the invention. Description of the invention. The invention and in particular the photoelectrochemical properties of the film and the electrode are illustrated by way of example by the accompanying diagrams. Fig. 1 shows the current- voltage (I-V) characteristics of Ti + doped iron oxide films or layers of various doping levels. Fig. 2 shows the current- voltage (I-V) characteristics of Sb D+ doped iron oxide films or layers of various doping levels. Fig. 3 shows the photocurrent action spectra of iron oxide doped with the different dopants, that is Sb, Ti compared with iron oxide that is not doped. IPCE %, means (Incident Photon-to Current Efficiency in percents). The diagram in the inset shows the absorption spectra of iron oxide as a function of the wavelength of the light. Fig. 4 illustrates the photocurrent action spectra of films with different numbers of superimposed iron oxide layers. The diagram in the inserted window shows the absorbance of iron oxide films with different number of layers (thickness) for light of different wavelength. Fig. 5 illustrates the I-V characteristics of iron oxide in the presence of sodium lactate as a sacrificial donor. The supporting electrolyte is aqueous NaCL0 4 at pH=l .06. Fig, 6 shows a schematic drawing of a so-called tandem cell that operates as a water photolysis device. A method is disclosed for the preparation of an electrode constituted by a compact polycrystalline Fe2U3 film supported on a conducting glass. The latter serves as a transparent electric current collector. The film is an n-type semiconductor, electrons being the majority carriers and holes the minority charge carriers or a p-type semiconductor. The n-doping is achieved by introducing a suitable substitutional dopant into the Fe2θ3 lattice. When placed in contact with the electrolyte a depletion layer is formed at the semiconductor surface. The electric field present in the space charge layer assists in the separation of electron-hole pairs produced by light excitation of the oxide. This effect is critical in order to obtain high quantum yields for photocatalytic oxygen evolution on Fe2θ3- Other factors that control the efficiency of the Fe2θ3 -films are the minority carrier diffusion length determined by impurities or lattice imperfections and the presence of surface states acting as recombination centers. The latter factors are very unfavorable for conventional Fe2θ3 films impairing its operation as an anode for photocatalytic water oxidation. The method disclosed in the present invention overcomes these material problems. Spray pyrolysis is a process where a solution containing the constituents of the film to be produced is e.g. sprayed onto a heated or hot substrate. The solvent evaporates or boils of and the film is produced by pyrolysis of the remaining constituents contained in the solvent. An alternative for the production of films is the sol gel process. Working example Preparation of Fe2θ3 films on conducting glass and photoelectrochemical characterization: A spray pyrolysis procedure was employed to prepare Fe2U3 layers. An alcoholic (2-propanol) solution containing 0.1M FeCl 3 .6H 2 θ and 0.1M HC1 was sprayed on to a uniformly heated (380 °C) conducting glass open to an air atmosphere. The spray gun was operated using nitrogen as a carrier cum atomizing gas. Substitutional doping of other elements such as Ti, Sb, Si, etc. were introduced into the Fe2U3 film by pre- mixing suitable precursors (chlorides, for example) in the FeCl3 solution employed for the spray pyrolysis. These dopants are able to augment the number of the majority carriers (electrons). The spray time was fixed at 10 seconds, each time. The time interval between two consecutive spraying acts was 10 minutes. Multiple spraying was used to increase the layer thickness and producing an arrangement of films consisting of two or more layers of the film. A three electrode (working, counter and reference) setup was used for evaluating the electrochemical performance of the finished electrodes. Upon contacting the Fe2θ3 film with the aqueous electrolyte, a depletion layer is formed whose electric field assists in the separation of electron-hole pairs generated by light. This drives electrons to the bulk and then to the external circuit and the holes to the Fe2U3 surface where they oxidize water to oxygen. Concomitantly at the Pt counter electrode, or counterelectrode made of another conducting material, H 2 is liberated as a result of the reduction reaction. Alternative materials to platinum for use as a counter-electrode are for example nickel or polytungstate derivatives supported on a conductive substrate. In figure 1 and 2, the anodic photocurrent is plotted as a function of the electrode potential for various Fe2U3 electrodes. The effect of the dopant is to augment strongly the photocurrent at a given potential. An almost 4 fold increase of the photocurrent is obtained under reverse bias. Within the range of concentrations employed, Ti 4+ doping showed the best performance at 5 atom % (Figure 1). With Sb D+ , this was observed at 0.125 atom % ( Figure 2 ). Both the onset potential of the photocurrent and its maximum value were taken for such comparison. By contrast, substitution of iron by silicon which is most frequently used to n-dope iron oxide did not improve the performance of the films. The spectral response of the photocurrent is shown in Figure 3, Between the two dopants, it was found that Ti 4+ doping shifts the spectral response of the layer more towards visible wavelength (red shift), when compared to Sb 5+ dopant. Sb doping also helps in spectral red shift but less effectively. Such spectral shift will improve the light harvesting property of the electrode. The effect of number of sprayed layers was also studied. Results are shown in Figure 4. It was observed that even though the light absorbance increases with increasing number of layers, the highest IPCE (incident photons to current efficiency) was noticed with 7 layers. Thereafter, the IPCE started decreasing again. The effect of adding sacrificial donors to the electrolyte surrounding Fe 2 O 3 electrode was also investigated. Figure 5 shows the improvement in the current voltage characteristics of such a system. The Photocatalytic film of semiconducting iron oxide (Fe 2 O 3 ), contains an n-dopant, or a mixture of n-dopants, or a p-dopant or a mixture of p-dopants. Electrode consists of a substrate, with one or more films or photocatalytic arrangements of film of semiconducting n-doped or p-doped iron oxide (Fe 2 O 3 ) e.g. on the surface of one side of the substrate or on the surface of different sides. The photoelectrochemical cell comprises electrodes with a film or with films of the n-doped or p-doped semiconducting iron oxide (Fe 2 O 3 ). The semiconducting iron oxide (Fe 2 O 3 ) film can be manufactured with a spray pyrolysis process or a sol gel process. The system for the direct cleavage of water with visible light, into hydrogen and oxygen comprises one or more of the photoelectrochemical cells with photocatalytic films. The system can be a tandem cell system, comprising the photoelectrochemical cell with the doped iron oxide ; (Fe 2 O 3 ) film. A schematic drawing of a water photolysis device, a tandem cell, is illustrated in Fig. 6. The device consists of two photo systems connected in series. The cell • on the left contains the aqueous electrolyte that is subjected to water photolysis. The electrolyte is composed of water as a solvent to which an electrolyte has been added for ionic conduction. Saline seawater can also be used as a water source in which case the addition of electrolyte becomes superfluous. Light enters from the left side of the cell through a glass window 1. After traversing the electrolyte 2 it impinges on the back wall of the cell constituted by a mesoporous semiconductor film 3 composed of doped Fe2θ3 , The latter is deposited onto a transparent conducting oxide film 4, made from a material such as fluorine doped tin dioxide that serves as current collector which is deposited on the glass sheet 1. The oxide absorbs the blue and green part of the solar spectrum while the yellow and red light is transmitted through it. The yellow and red part of the solar spectrum is captured by a second cell mounted behind the back wall of the first cell. The second cell contains a dye sensitized mesoporous Tiθ2 film. Its functions is a light driven electric bias increasing the electrochemical potential of the electrons that emerge from the film under illumination to render the reduction of water to hydrogen possible. It consists of a transparent conducting oxide film 4 deposited on the back side of the glass sheet 1 constituting the back wall of the first cell. The conducting oxide film is covered by the dye-derivatized nanocrystalline titania film 6. The latter is in contact with the organic redox electrolyte 7 and the counter electrode 8 consisting of a glass which is rendered conductive on the side of the organic electrolyte by deposition of a transparent conductive oxide layer. Behind the counterelectrode there is a second compartment 9 containing an aqueous electrolyte of the same composition as in the front compartment 2. Hydrogen is evolved at the cathode 10 which is immersed in this second electrolyte compartment. The two electrolyte compartments 2 and 10 have the same composition and are separated by an ion conducting membrane or a glass frit 11. We shall now discuss a specific embodiment of such a tandem device achieving the direct cleavage of water into hydrogen and oxygen by visible light. A thin film of nanocrystalline tungsten trioxide absorbs the blue part of the solar spectrum. WO3 + hv => WO3 (e-, h+) The valence band holes (h + ) created by band gap excitation of the oxide serve to oxidize water forming oxygen and protons: 4h+ + H2O => O2 + 4H+ while the conduction band electrons are collected on the conducting glass support forming the back wall of the first photocell. From there on they are fed into the. second photocell that consists of a dye sensitized nanocrystalline Tiθ2 . film. The latter is mounted directly behind the WO3 film capturing the green and red part of the solar spectrum that is transmitted through the top electrode. The role of the second photocell is merely that of a photo driven bias. The electrochemical potential of the electrons is sufficiently increased by passing • through the second photocell that they can reduce the protons produced during ' water oxidation to hydrogen. 4 H + + 4 e- = 2 H2 The overall reaction corresponds to the splitting of water by visible light. H2θ =j> H2 + 0.5 O2 Semiconducting oxides, such as WO3 and Fe2θ3 are the materials of choice for the photo-anode as they are stable under operation resisting to both dark and photo corrosion. Tungsten trioxide and ferric oxide are so far the only known and readily available oxide semiconductors that are capable of producing oxygen using visible light. The electrons generated in the oxide are collected by the conducting glass and are subsequently fed into a second photocell that is placed directly behind the oxide film. The photo-active element of this second cell is a dye sensitized mesoporous Tiθ2 capturing the yellow and red light that is transmitted tlrrough the oxide electrode. It serves as a photo- driven bias increasing the electrochemical potential of the photoelectrons produced by band gap excitation of the oxide to render reduction of water to hydrogen feasible.

Claims: Claims 1. Photocatalytic film of semiconducting iron oxide (Fe 2 O 3 ), characterized in that it contains an n-dopant, or a mix of n-dopants, or a p-dopant or a mix of p-dopants. 2. Photocatalytic film according to claim 1, the n-dopant or the n-dopants selected from the elements Si, Ge, Pb, Ti, Zr, Hf, Sb, Bi, V, Nb, Ta, Mo, Tc, Re, F, Cl, Br , I, Sn, Pb, N, P, As or C or the p-dopant or the p-dopants selected from the elements Ca, Be, Mg, Sr, Ba, 3. Photocatalytic film as claimed in claim 1 of 2, the film having a thickness between 100 nm and lO'OOO nm, preferably the film having a thickness between 500 nm and 5000 nm. 4. Photocatalytic arrangement of films, consisting of two or more layers of film as claimed in any of claims 1 to 3. 5. Electrode characterized by a substrate, on the substrate one ore more films or photocatalytic arrangements of film of semiconducting iron oxide (Fe 2 O ) as claimed in any of claims 1 to 4. 6. Electrode according to claim 5, the substrate and the one or more films being transparent for light with a wavelength of 600 nm or more. ■ 7. Electrode according to claim 5 or claim 6, wherein the substrate is a metal, crystal, glass, an electrically conducting glass, or plastic. 8. Method of producing a polycrystalline photocatalytic film of Fe2U3 or arrangement layers of films according of any of claims 1 to 4, or of producing an electrode according to any of claims 5 to 7, characterized in that the layer or layers are produced by a spray pyrolysis process or a sol gel process. 9. Photoelectrochemical cell with one or more electrodes as claimed in any of claims 5 to 7, a polycrystalline photocatalytic Fe2U3 film or arrangement of layers of films, as claimed in any of claims 5 to 7. 10. System for the direct cleavage of water with visible light, into hydrogen and oxygen the system comprising one or more of the photoelectrochemical cell as claimed in claim 9 11. System for the direct cleavage of water with visible light, into hydrogen and oxygen as claimed in claim 10 comprising a tandem cell consisting of two superimposed photoelectrochemical cells, both cells being electrically connected, the photoactive material present in the top cell being a film or an arrangement of layers of films of Fe2θ3 deposited on a conducting glass and placed in contact with an aqueous electrolyte solution, said oxide absorbing the blue and green part of the solar emission spectrum to generate oxygen and protons from water and transmitting the yellow and red light to a second photoelectrochemical cell, mounted, in the direction of the light, behind the top cell and comprising of a dye sensitized photovoltaic film, said bottom cell converting the yellow, red and near infrared portion of the light in particular sunlight, to drive the reduction of the protons, produced in the top cell during the water oxidation process, said reduction of protons to hydrogen gas taking place in an electrolyte compartment mounted behind the bottom cell and being separated from the top cell compartment where oxygen is evolved by a glass frit or an ion conducting membrane.

Inventors: GRAETZEL MICHAEL, THAMPI RAVINDRANATHAN, GRAETZEL, MICHAEL, THAMPI, RAVINDRANATHAN
Applicants: GRAETZEL MICHAEL, HYDROGEN SOLAR PRODUCTION COMP, THAMPI RAVINDRANATHAN, GRAETZEL, MICHAEL, THAMPI, RAVINDRANATHAN, THE HYDROGEN SOLAR PRODUCTION COMPANY LIMITED
Application year: 2001
Main classification: B01J35
IPC codes: B01J23, B01J35, C01B3, C01G49, C25B1, H01G9, H01M4, H01M14