VERTICAL CONDUCTION FLIP-CHIP DEVICE WITH BUMP CONTACTS ON SINGLE SURFACE

Abstract: A flip-chip MOSFET structure has a vertical conduction semiconductor die (30) in which the lower layer of the die is connected to a drain electrode (32) on the top of the die by a diffusion sinker or conductive electrode. The source (31) and gate (33, 34) electrodes are also formed on the upper surface of the die and have coplanar solder balls (40, 41, 43) for connection to a circuit board. The structure has a chip scale package size. The back surface of the die, which is inverted when the die is mounted may be roughened or may be metallized to improve removal of heat from the die. Several separate MOSFETs can be integrated side-by-side into the die to form a series connection of MOSFETs with respective source and gate electrodes at the top surface having solder ball connectors. Plural solder ball connectors may be provided for the top electrodes and are laid out in respective parallel rows. The die may have the shape of an elongated rectangle with the solder balls laid out symmetrically to a diagonal to the rectangle.

Description: Title: VERTICAL CONDUCTION FLIP-CHIP DEVICE WITH BUMP CONTACTS ON SINGLE SURFACE BACKGROUND OF THE INVENTION This invention relates to semiconductor device packages and the method of making such packages and more specifically relates to a chip-scale package and method of its manufacture. Semiconductor device packages are well known for housing and protecting semiconductor die and for providing output connections to the die electrodes. Commonly, the semiconductor die are diced from a large parent wafer in which the die diffusions and metallizing are made in conventional wafer processing equipment. Such die may be diodes, field effect transistors, thyristors and the like. The die are fragile and the die surfaces must be protected from external environment. Further, convenient leads must be connected to the die electrodes for connection ofthe die in electrical circuits. Commonly, such die are singulated from the wafer, as by sawing, and the bottom ofthe die is mounted on and connected to a portion of a circuit board which has conforming sections to receive respective die. The top electrodes of the die are then commonly wire bonded to other portions ofthe circuit board, which are then used for external connections. Such wire connections are delicate and slow the mounting process. They also provide a relatively high resistance and inductance. It is desirable in many applications that the packaged semiconductor devices be mountable from one side ofthe package, to enable swift and reliable mounting on a circuit board, as well as low resistance connections. SUMMARY OF THE INVENTION This mvention provides a novel semiconductor die package comprising a "flip-chip" that is mountable on a circuit board or other electronic interface using one surface ofthe chip. In particular, the package has contacts, for example, gate, source and drain electrode contacts (for a MOSFET) on the same side ofthe package, and can be mounted by forming solder ball contacts on the surface ofthe chip which interface with the external gate, source and drain connections respectively on the circuit board. The source connection to the chip is made with solder balls on the source electrode ofthe chip, the solder balls being positioned so that they will interface with appropriate source electrical connections on the circuit board. The package is configured so that the drain electrode is on the same surface. In one embodiment, the active junctions reside in a layer of relatively low carrier concentration (for example P " ) below the source electrode and above a substrate of relatively high carrier concentration ofthe same type (for example, P + ). At least one drain electrode is positioned on the same surface at a region separate from the source electrode. A diffusion region or "sinker" extends from and beneath the top drain electrode, through the layer of relatively low carrier concentration to the substrate. The diffusion region has the same carrier concentration and type as the substrate (for example, P + ). Thus, an electrical path is established from the source electrode, through the active elements, and into the substrate, through the diffusion region and to the top drain electrode. As noted, the drain electrode is on the same surface as the source and gate electrodes and can thus be mounted to the circuit board using solder balls that correspond to locations of appropriate external drain connections. In another embodiment, instead of using diffusion regions beneath the drain contacts, the layer of relatively low carrier concentration may be etched to the substrate and filled with the drain electrode. This may be done concurrently with the step of etching trenches for a vertical conduction trench-type device, for example. In a still further embodiment ofthe invention, two vertical conduction MOSFET devices are formed in a common chip, with their source regions being laterally interdigitated and with a common drain substrate. This structure forms an inherent bidirectional switch. All contacts are available at the top surface, and the contact balls may be located along straight rows which may be symmetrical around a diagonal to a rectangular chip to simplify connection to a circuit board support. The bottom ofthe chip may have a thick metal layer to provide a low resistance current path between adjacent devices with common drains. It can also improve thermal conduction when the chip is mounted with its top surface facing a printed circuit board support. Other features and advantages ofthe present invention will become apparent from the following description ofthe invention which refers to the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a perspective view of a first embodiment ofthe mvention. Figure 2 is a top view of the metallizing pattern of the device of Figure 1, prior to the foraiation ofthe contact bumps. Figure 3 shows the wafer of Figure 2 after the formation of solder bumps. Figure 4 is a cross section of Figure 2 taken through a small area corresponding to the area at section line 4-4 in Figure 2, and shows the source and drain top metallizations. Figure 5 is a layout showing the size and spacing ofthe contact balls of Figures 1 and 3. Figure 6 is a cross-section of Figure 2 taken across section line 6-6 in Figures 2 and across the gate bus. Figure 7 shows the use of a P + sinker diffusion to enable the connection of a top contact of drain metal to the P + substrate. Figure 8 shows a modified contact structure for making contact from the top surface drain of Figure 4 to the P + substrate. Figure 9 is a top view ofthe metallized top surface of another embodiment ofthe invention. Figure 10 shows Figure 9 with rows of contact balls in place. Figure 11 is a cross-section of Figure 9 for a planar junction pattern instead ofthe trench structure of Figure 4. Figure 12 is a cross-section of a further embodiment ofthe invention which is similar to that of Figure 4 but uses two MOSFETs in a common chip, producing a bidirectional conduction device and is a cross-section of Figure 14 taken across section line 12-12 in Figure 14. Figure 13 is a circuit diagram ofthe device of Figure 12. Figure 14 is a top view of a device such as that of Figures 12 and 13. Figure 15 is a front view ofthe device of Figure 14. Figures 16 to 19 show further varients ofthe device of Figure 14. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Figures 1 to 6 show a first embodiment ofthe invention which is in the form of a flip-chip power MOSFET having all electrodes in one planar surface and having contact bumps to enable contact to traces or other electrical conductors of a support structure such as a printed circuit board. The device to be described could be any other type device such as a P/N or Schottky diode, an IGBT, a thyristor, an integrated circuit die having plural components and the like. Further, the device of Figures 1 to 6 is shown as a P channel device. The conductivity types can be reversed to make an N channel device. Further, the device of Figures 1 to 6 is shown as a trench type device, but it could be a planar cellular or stripe structure as well as will be later described. The completed device, ready for mounting, is shown in Figure 1 and consists of a silicon die 30 having upper source electrode metallizing 31 (usually aluminum which may be from 2 microns to 8 microns thick), drain electrode metallizing 32 and gate electrode metal pad 33 (Figure 2) and gate bus 34. The die is processed in wafer form, as partly shown in Figures 2 and 3. Contact balls are formed on the wafer, shown in Figures 1, 3 and 4 as source contact ball 40 on source metal 31, drain contact balls 41 and 42 on drain contact metallizing 32 and gate contact ball 43 on gate pad metallizing 33. The die within the wafer are then singulated and are ready for assembly on a circuit board or the like. Figures 4 and 6 show a trench-type power MOSFET geometry for the device of Figures 1 and 3. Thus, for a P channel device, a P + silicon substrate 50 is used and a lower concentration P type, junction receiving layer 51 is epitaxially grown atop P + substrate 50. An N type base or channel diffusion 52 (Figures 4 and 5) is then formed. Thereafter, and using conventional techniques, a plurality of parallel trenches 60, 61, (Figure 4) or an array of intersecting trenches forming isolated mesa regions. A thin insulation layer, such as silicon dioxide is then grown on the walls of each of trenches 60 to 64, shown as gate insulation layers 70 to 74 respectively. A conductive polysilicon gate 75 is then deposited into each ofthe trenches and over the gate oxide layers and is then etched away to leave polysilicon only in the trenches and gate bus and pad regions. After that, a TEOS layer 80 is deposited and patterned, leaving insulation caps 76 and 77 (which may be TEOS) over the top ofthe polysilicon 75 in trenches 60 and 61 (Figure 4). A P + source diffusion 53 is formed in the top of N diffusion 52 are etched through layers 52 and 53. Contact openings 81 and 82 (Figure 4) are next etched through the P + source layer 53 and into channel layer 52, and N* contact diffusions are formed in the bottoms of openings 81 and 82. The dielectric material is then etched laterally to expose a portion at the source regions on the die surface for contact. A continuous aluminum layer is then deposited atop the surface ofthe device, with the aluminum contacting the P + source regions 53 and N type channel regions 52. This aluminum layer is separated, by etching, into source contact 31, drain contact 32 and gate pad 33. Figure 5 shows the novel configuration of contact balls 40 and 41. These solder balls are fomied by a well known process employing a nickel-gold plating, followed by the stencil printing of solder, and flowing the solder to form balls. Thus, the solder balls or bumps are on 0.8 mm centers which is a wider pitch than is conventionally used. By using a pitch of 0.8 mm or larger, the flip chip structure ofthe invention can mimic the application and attachment of conventional chip scale packages to a circuit board with conventional traces, using conventional surface mount techniques. The solder balls 40 and 41 are conventionally thermosonically welded onto a surface, but have a larger diameter than those previously used, for example, 200 μ or greater, compared to the standard 150 μ. By using a larger diameter, thermal conduction is enhanced and resistance to thermal fatigue is improved. In Figure A, the drain metal 32 is shown as contacting an upwardly extending portion of P + substrate 50. This is a schematic representation, and in practice, the contact from surface drain 32 to P + substrate 50 is made as shown in Figures 7 or 8. Thus, in Figure 7, a P + "sinker" diffusion 90 is employed to make the contact. In Figure 8, a trench 91 is formed, as during the trench etching process for making the active area, and is filled with metal or conductive polysilicon 92. The operation ofthe device of Figures 1 to 8 will be apparent to those of ordinary skill. Thus, to turn the device on, and with suitable potentials applied to the source and drain electrodes 31 and 32, the application of a gate potential to gate 75 will cause the N type silicon adjacent the gate oxide layers 70 to 74 to invert to the P type, thus completing a circuit from source electrode 31, through source regions 53, through the inversion regions to P region 51, P + substrate 50 and then laterally through P + substrate 50 and upwardly (through regions 90 or 92) to drain electrode 31. The novel device of Figures 1 to 8 brings the size ofthe device ready for mounting to a minimum; that is, to the size ofthe die. The die itself has an extremely low RDSON, using a vertical construction, cellular trench technology. For example, the design can employ over 110 X 10 6 cells per in 2 . However, unlike the standard trench FET design, the drain connection is brought to the front or top ofthe die. There is no need for back-grinding the bottom die surface or for metal deposition on the bottom surface ofthe die. By not back grinding, the thicker P + substrate allows for lower lateral resistance to flow of drain current. Preferably, the bottom die surface may be rough and unpolished to increase its surface area to assist in heat removal from the chip. After metal, a silicon nitride (or other dielectric) passivation layer is deposited. The silicon nitride passivation is patterned to leave 4 openings per die with a pitch, for example, of 0.8 mm. The die size may typically be about 0.060" x 0.060". Larger devices of 0.123" x 0.023" are also typical. The silicon is so designed as to provide a 20 volt P-channel device with an R * A of 46.8 ohm-mm 2 at Vgs of4.5 volt. While a metal layer is not required on the bottom surface of substrate 50, it can be useful to use such a metal layer as a current conductor or to make thermal contact to a heat sink. Other surface geometries, with a larger number of solder balls for higher current capacity can also be used. Thus, as shown in Figures 9 and 10, a larger die 100 can be laid out so that its top surface provides a source electrode 101, two drain electrodes 102 and 103 bordering the opposite edges ofthe die 100 and a gate pad 104 with runners or bus 105, 106. As shown in Figure 10, each of drain electrodes 102 and 103 receive 5 solder balls, aligned in respective rows, and source 101 receives 8 solder balls also aligned in parallel rows. A single solder ball is connected to gate pad 104. By aligning the solder balls in respective parallel rows, the respective conductive traces on the printed circuit board receiving the device can be laid out in simple straight lines. Figure 11 shows how the device of Figure 9 can be carried out with planar technology, and as an N channel device. Thus, in Figure 11, die 100 is formed with an N 1" substrate 110, an N type epitaxial (epi) layer 111 and with spaced polygonal P channel diffusions 112, 113, 114. Each of diffusions 112, 113 and 114 receives an N "1" source diffusion 115, 116 and 117 respectively and a P + contact diffusion 118, 119 and 120 respectively. A suitable gate structure, including a polysilicon gate latice 121 overlies a conventional gate oxide and is covered by an insulation layer 122 to insulate the gate latice from overlying source electrode 101 which contacts the source regions and channel regions in the usual manner. An N "1" sinker provides a conductive path from the N 4" substrate to drain electrode 103. It is also possible to make the die with bidirectional conduction characteristics in which two series connected MOSFETs are integrated into a single chip. Thus, as shown in Figure 12 the die can be formed in the manner of Figures 1 through 8 for a P channel trench implementation. Thus, using the numerals used in Figures 1 to 8, the bidirectional die 130 of Figure 12 integrates two such devices in a single die. The two devices are identified with the numerals of Figures 4, followed by an "A" and a "B" respectively, but with a common substrate 50. Two respective gate structures will also be provided, each having the structure of Figures 5 and 6. A substrate metallization 131 is also shown. The circuit diagram ofthe bidirectional device is shown in Figure 13 and consists of two MOSFETs 140 and 141 having respective source terminals S 1 and S 2 , respective gate terminals G ! and G 2 and a common drain 50, 131, thereby to form the bidirectional conduction circuit. MOSFETs 140 and 141 are vertical conduction devices with respective body diodes (not shown in Figure 13) which conduct when the other MOSFET is turned on. Figures 14 and 15 show a top view ofthe chip or die 130 of Figure 12. The chip 130 may have the bottom conductive drain electrode 131 (Figure 15) and will have respective gate ball electrodes G j and G 2 which may have respective gate runners or bus 142 and 143 respectively. Drain 131 electrode may be a thick low resistance metal layer (as compared to the conventional source electrode thickness). The bottom conductor 131 may be eliminated if P + substrate 50 has a high enough conductivity, but it can be useful as a heat sink. The source electrodes of each of FETs 140 and 141 have two or more electrode bumps S ! and S 2 as shown in Figure 14. The distance between the S t bumps and G x bump is equal; as is the distance between the S 2 bumps and the G 2 bump. In accordance with a further aspect of the invention, the height of chip or die 130 is greater than its width. Thus, it is a non-square, elongated rectangle. Further, the die bumps S l5 S 2 , G and G 2 are symmetric around a diagonal ofthe die 130, shown as dotted line diagonal line 150 in Figure 14. Thus, the source and gate electrodes will be in the same location regardless ofthe up/down orientation ofthe chip. Since the die has rotational symmetry, no pin marking is necessary and simple pattern recogmtion apparatus can determine die orientation or placement during attachment to a surface. As pointed out previously, and in accordance with the invention, the source balls SI are in a line or row which is spaced from and parallel to the line of source balls S2. Figures 16, 17, 18 and 19 show alternate arrangements for FET1 (FET 140) and FET2 (FET 141) of Figuresl3, 14 and 15 where similar numerals identify similar parts. The silicon die of Figures 16 to 19 may have an area of about 0.120" x 0.120". Note that in each case, source balls SI and S2 lie in respective vertical and parallel rows, making it easy to use straight conductors for their parallel connection by either straight metal strips or straight metalizing lines on a printed circuit board. Further note that the sources of FETs 140 and 141 are interdigitated in Figures 17, 18 and 19 increasing the area of their connection. The arrangement of Figure 19 is particularly advantageous, because it minimizes the distance current has to travel in the substrate, while keeping the two source metal bump sets together. In this way, both substrate and metal resistance are very low, while board level connection is very easy. Although the present invention has been described in relation to particular embodiments thereof, many other variations and modifications and other uses will become apparent to those skilled in the art. It is preferred, therefore, that the present mvention be limited not by the specific disclosure herein, but only by the appended claims.

Claims: WHAT IS CLAIMED IS: 1. A flip chip semiconductor device comprising a silicon wafer having parallel first and second major surfaces; at least one P region and at least one N region in said wafer which meet at a PN junction within said silicon wafer; first and second coplanar, laterally spaced and metallized areas formed on said first major surface and insulated from one another and connected to said P region and said N region respectively; said second major surface being intentionally roughened to define an extended area for improved convection cooling for said semiconductor device. 2. A flip chip semiconductor device comprising a silicon wafer having parallel first and second major surfaces; at least one P region and at least one N region in said wafer which meet at a PN junction within said silicon wafer; first and second coplanar, laterally spaced and metallized layers formed on said first major surface and insulated form one another and connected to said P region and said N region respectively; and a bottom metallized layer extending across said second major surface. 3. The device of claim 1 which includes a third metallized layer atop said first major surface which is coplanar with and laterally spaced from said first and second metallized layers; said first, second and third metallized layers comprising source, drain and gate electrodes respectively of a MOSgated device. 4. The device of claim 2 which includes a third metallized layer atop said first major surface which is coplanar with and laterally spaced from said first and second metallized layers; said first, second and third metallized layers comprising source, drain and gate electrodes respectively of a MOSgated device. 5. The device of claim 1 which further includes at least one contact bump connected to each of said metallized layers. 6 The device of claim 2 which further includes at least one contact bump connected to each of said metallized layers. 7. The device of claim 3 which further includes at least one contact bump connected to each of said metallized layers. 8. The device of claim 4 which further includes at least one contact bump connected to each of said metallized layers. 9. The device of claim 2 wherein said bottom metallized layer is substantially thicker than all of said first and second metallized layers. 10. The device of claim 4 wherein said bottom metallized layer is substantially thicker than all of said first and second metallized layers. 11. The device of claim 6 wherein said bottom metallized layer is substantially thicker than all of said first and second metallized layers. 12. The device of claim 8 wherein said bottom metallized layer is substantially thicker than all of said first and second metallized layers. 13. The device of claim 5 wherein a plurality of contact bumps are connected to each of said first and second metallized layers; said plurality of contact bumps connected to said first metallized layer being aligned along a first straight row; said plurality of contact bumps connected to said second metallized layer being aligned along a second straight row. 14. The device of claim 13 wherein said first and second rows are parallel to one another. 15. The device of claim 6 wherein a plurality of contact bumps are connected to each of said first and second metallized layers; said plurality of contact bumps connected to said first metallized layer being aligned along a first straight row; said plurality of contact bumps connected to said second metallized layer being aligned along a second straight row. 16. The device of claim 15 wherein said first and second rows are parallel to one another. 17. The device of claim 13 which includes a third metallized layer atop said first major surface which is coplanar with and laterally spaced from said first and second metallized layers; said first, second and third metallized layers comprising source, drain and gate electrodes respectively of a MOSgated device. 18. The device of claim 14 which includes a third metallized layer atop said first major surface which is coplanar with and laterally spaced from said first and second metallized layers; said first, second and third metallized layers comprising source, drain and gate electrodes respectively of a MOSgated device. 19. A flip chip semiconductor device comprising a silicon wafer having first and second parallel major surfaces; at least one P region and at least one N region in said wafer which meet at a PN junction within said silicon wafer; first and second coplanar, laterally spaced metallized layers formed on said first major surface and insulated form one another and connected to said P region and said N region respectively; and a plurality of contact bumps connected to each of said first and second metallized layers; said plurality of contact bumps connected to said first metallizing layer being aligned along a first straight row; said plurality of contact bumps connected to said second metallizing layer being aligned along a second straight row. 20. The device of claim 19 which includes a third metallized layer atop said first major surface which is coplanar with and laterally spaced from said first and second metallized layers; said first, second and third metallizing layers comprising source, drain and gate electrodes respectively of a MOSgated device. 21. The device of claim 19 and a bottom metallized layer extending across said second major surface. 22. The device of claim 19 wherein said bottom metallized layer is substantially thicker than all of said first and second metallized layers. 23. The device of claim 19 wherein said first and second rows are parallel to one another. 24. The device of claim 19 wherein said silicon wafer is a rectangular wafer having an area defined by a given length and a given width, said length being greater than said width; said first and second rows of bumps being parallel to one another and being symmetric about a diagonal line across said wafer. 25. The device of claim 24 which includes a third metallized layer atop said first major surface which is coplanar with and laterally spaced from said first and second metallized layers; said first, second and third metallized layers comprising source, drain and gate electrodes respectively of a MOSgated device. 26. The device of claim 21 wherein said silicon wafer is a rectangular wafer having an area defined by a given length and a given width, said length being greater than said width; said first and second rows of bumps being parallel to one another and being symmetric about a diagonal line across said wafer. 27. The device of claim 19 which further includes a bottom metallized layer extending across said second major surface. 28. A bidirectional conduction flip chip device comprising a silicon wafer having first and second parallel major surfaces; first and second laterally separated MOSgated devices formed in said silicon wafer; said first and second MOSgated devices comprising a first and a second source region respectively of one conductivity formed into a first and second spaced lateral area respectively of said first major surface, a first and second channel region respectively of a second conductivity type receiving said first and second source region, respectively a common drain region receiving said first and second channel regions and extending to said second major surface, and a first and second gate structure respectively disposed on said first major surface and operable to invert respective portions of said first and second channel regions to allow conduction from said first and source regions respectively to said drain region; first and second laterally spaced source metallized layers disposed atop said first major surface and comiected to said first and second source regions respectively; and first and second laterally spaced gate metallized layers atop said first major surface and connected to said first and second gate structures respectively. 29. The device of claim 28 which further includes at least one contact bump connected to each of said source and gate metallized layers. 30. The device of claim 29 which includes a respective plurality of contact bumps connected to each of said source metallized layers; each of said plurality of contact bumps arranged in respective spaced rows which are parallel to one another. 31. The device of claim 28 wherein said first and second source regions are disposed in laterally interdigitated relation with respect to one another. 32. The device of claim 30 wherein said first and second source regions are disposed in laterally interdigitated relation with respect to one another. 33. The device of claim 28 which further includes a metal layer on said second major surface. 34. A semiconductor device comprising a silicon die having first and second parallel surfaces; a region of one conductivity type extending from said first surface and into the body of said die; a junction pattern defined in said device formed by a plurality of laterally spaced diffusions ofthe other conductivity type into said region of one conductivity type; a first conductive electrode formed atop said first surface and in contact with said first plurality of diffusions; a second conductive electrode formed atop said first surface which is coplanar with and laterally spaced from and insulated from said first conductive electrode and in contact with said region of one conductivity type; and at least one solder ball connector formed atop each of said first and second conductive electrodes respectively; the current path from said first conductive electrode to said second conductive electrode having a vertical component which is generally perpendicular to said first surface. 35. The device of claim 34 wherein said device comprises a power MOSgated device; said first and second electrodes comprising the main power electrodes of said device. 36. The device of claim 35 wherein said device includes a polysilicon gate structure fonned adjacent said plurality of diffusions and operable to turn said device on and off, and a third conductive electrode formed atop said first surface and coplanar with and laterally spaced from and insulated from said first and second conductive electrodes and connected to said polysilicon gate structure; and a solder ball connector connected to said third conductive electrode; all of said solder ball connectors being coplanar with one another. 37. The device of claim 36 wherein said device is a flip-chip power MOSFET. 38. The device of claim 34 wherein said one conductivity type is the P type. 39. The device of claim 36 wherein said one conductivity type is the P type. 40. The device of claim 34 wherein said region of one conductivity type includes an upper layer of relatively low concentration expitaxially formed silicon and a lower layer of higher concentration non-epitaxial silicon. 41. The device of claim 36 wherein said region of one conductivity type includes an upper layer of relatively low concentration expitaxially formed silicon and a lower layer of higher concentration non-epitaxial silicon. 42. The device of claim 40 which further includes a sinker diffusion of relatively high concentration extending from and connected to said second electrode to said lower layer of said region. 43. The device of claim 41 which further includes a sinker diffusion of relatively high concentration extending from and connected to said second electrode to said lower layer of said region. 44. The device of claim 40 which further includes a trench extending tlirough said upper layer of said region of one conductivity type and a conductive material which at least lines the side walls of said trench. 45. The device of claim 44 wherein said device includes a polysilicon gate structure formed adjacent said plurality of diffusions and operable to turn said device on and off, and a third conductive electrode formed atop said first surface and coplanar with and laterally spaced from and insulated from said first and second conductive electrodes and connected to said polysilicon gate structure; and a solder ball connector connected to said third conductive electrode; all of said solder ball connectors being coplanar with one another. 46. The device of claim 43 wherein said device is a flip-chip power MOSFET. 47. The device of claim 45 wherein said device is a flip-chip power MOSFET. 48. The device of claim 46 wherein said one conductivity type is the P type. 49. The device of claim 47 wherein said one conductivity type is the P type. 50. The device of claim 36 wherein said second surface is roughened to define an extended area for improved cooling of said device. 51. The device of claim 36 which further includes a metal layer secured to and extending across said second surface. 52. The device of claim 34, wherein said device is selected from the group consisting of MOSFETs, Schottky diodes, bipolar transistors, and P/N diodes. 53. The device of claim 34, wherein said solder balls are arranged on a pitch greater than about 0.8 mm and have diameters greater than about 200 μ. 54. The device of claim 52, wherein said solder balls are arranged on a pitch greater than about 0.8 mm and have diameters greater than about 200 μ.

Inventors: ARZUMANYAN ARAM, KINZER DANIEL M, SAMMON TIM, ARZUMANYAN, ARAM, KINZER, DANIEL, M., SAMMON, TIM
Applicants: INT RECTIFIER CORP, INTERNATIONAL RECTIFIER CORPORATION
Application year: 2001
Main classification: H01L27
IPC codes: H01L21, H01L23, H01L27, H01L29