METHOD AND APPARATUS FOR TEMPERATURE CONTROLLED VAPOR DEPOSITION ON A SUBSTRATE

Abstract: A method of controlling the temperature of a low thermal emittance substrate (18) during a vapor deposition process which includes a first step of forming a preselected substance on a first side of the substrate (18) by vapor deposition, the substance having a high thermal emittance layer (40). The method includes a second step of forming on a second side of the substrate, a layer of a preselected substance (42), where the layer on the first side (42) radiates excess heat away from the substrate (18), thereby preventing heating of the substrate (18) to more than a predetermined temperature. Several multi-stage, free-span, vapor deposition apparatuses (10, 50, 70, 80, 90) are also taught which use the above method.

Description: METHOD AND APPARATUS FOR TEMPERATURE CONTROLLED VAPOR DEPOSITION ON A SUBSTRATE FIELD OF THE INVENTION The present invention relates generally to a vapor deposition method. The present invention relates in particular to a vapor deposition method in which the substrate temperature is controlled. BACKGROUND OF THE INVENTION Vacuum vapor deposition is a known method for increasing the surface areas of foil electrodes. A heat load, produced by condensation, raises the temperature of a substrate on which the vapor is deposited. In order to maintain the substrate at an optimum temperature for deposition, cooling is required. US Patent No. 4,970,626 to Kakinoki et al., describes a method for producing an electrolytic capacitor by vapor deposition, in which the substrate is supported by a drum. The drum also serves as a cooling element, dissipating heat by conduction. However, conduction cooling of the substrate has disadvantages. According to "Properties of Metallized Film in a Free Span Web Metallizer," by F. Casey et al., 1999 Society of Vacuum Coaters 505/856-7188, pp. 480-483, during vapor deposition, high heat production causes the substrate to expand. Yet, frictional forces between the substrate and the drum prevent the expansion. As a result, the substrate wrinkles. Free-span vapor deposition processes have been in use since the 1970's and avoid the problem of wrinkles. For example, US Patent No. 5,288,515, to Nakamura et al. describes a free-span, vapor deposition process. But without the cooling drum, heat dissipation remains a problem. Since conductive cooling with a cooling drum gives rise to substrate-foil wrinkles, and since convcctive cooling is inapplicable in a vacuum chamber, radiation heat dissipation is the only avenue that remains. Radiation heat dissipation can take place from the side of the substrate that is not being vapor-deposited. However, the effectiveness of radiation cooling depends on the thermal emittance of the substrate, which may be too low. For example, the thermal emittance of an aluminum substrate is approximately 0.02, too low to provide effective heat dissipation by radiation. SUMMARY OF THE INVENTION It is an aim of the present invention to provide a method and apparatus for vapor deposition at a controlled substrate temperature. There is thus provided, in accordance with a preferred embodiment of the present invention, a method of controlling the temperature of a low thermal emittance substrate during a process of vapor deposition thereon, which includes: a) a first step of forming, by vapor deposition of a preselected substance on a first side of the substrate, a high thermal emittance layer; and b) a second step of forming, by vapor deposition on a second side of the substrate, a layer of a preselected substance, wherein the layer on the first side is operative to radiate excess heat away from the substrate, thereby preventing heating of the substrate to more than a predetermined temperature. Further in accordance with a preferred embodiment of the present invention, the first step includes forming, by vapor deposition on the first side of the substrate, a thin layer of the high thermal emittance substance. Additionally, in accordance with a preferred embodiment of the present invention, the layer on the first side is operative to radiate excess heat away from the layer on the second side, in addition to radiating heat away from the substrate. Further in accordance with a preferred embodiment of the present invention, the substance of the second side is a preselected high thermal emittance substance. Additionally, in accordance with a preferred embodiment of the present invention, in the first and second steps the preselected substances are the same. Further in accordance with a preferred embodiment of the present invention, the method includes a third step of forming, by vapor deposition onto the layer formed on the first side of the substrate, a further layer of the preselected substance thereon. Alternatively, in accordance with the present invention, the method further includes a first-side step of forming, by vapor deposition onto the layer formed on the first side of the substrate, a further layer of the preselected substance thereon. Additionally, in accordance with the present invention, the method includes repeating the first-side step until a layer of a desired thickness is formed on the first side. Further in accordance with the present invention, the method includes a second-side step of forming, by vapor deposition onto the layer formed on the second side of the substrate, a further layer of the preselected substance thereon. Further in accordance with the present invention, the method includes repeating the second-side step until a layer of a desired thickness is formed on the second side. Additionally, in accordance with the present invention, the method includes a step of varying at least one of the following: the thickness of the layer on the first side, the thickness of the layer on the second side, the rate of vapor deposition onto the first side, and the rate of vapor deposition onto the second side. Further in accordance with a preferred embodiment of the present invention, the method includes cooling the substrate by radiation between the substrate and a cold element. Additionally, in accordance with a preferred embodiment of the present invention, the method includes moving the substrate on free-span apparatus for vapor deposition. Further in accordance with a preferred embodiment of the present invention, the method includes varying the substrate speed to control the substrate temperature. Additionally, in accordance with a preferred embodiment of the present invention, the method includes cooling the substrate by conduction to a cold element of the free-span apparatus. Alternatively, in accordance with the present invention, the method includes supporting the substrate on stationary apparatus for vapor deposition. Further in accordance with the present invention, the method includes cooling the substrate by conduction to a cold element of the stationary apparatus. Additionally, in accordance with the present invention, vapor deposition includes reactive vapor deposition. There is thus also provided, in accordance with a preferred embodiment of the present invention, multi-stage, free-span, vapor deposition apparatus, which includes: a) a first spool, on which a substrate is wound prior to vapor deposition, for unwinding and releasing the substrate, for vapor deposition; b) a second spool, for receiving the substrate following vapor deposition, and for winding the substrate thereon; c) a plurality of guide rollers, located on a path between the first spool and the second spool, for guiding the substrate; d) at least two front-side, vapor deposition stations, located along the path, arranged for vapor deposition on a front side of the substrate; e) at least one second-side, vapor deposition station, located along the path, between the at least two first-side vapor deposition stations, and arranged for vapor deposition on a second side of the substrate; and f) a vacuum chamber for housing aforementioned components, and for vapor deposition. Further in accordance with a preferred embodiment of the present invention, the apparatus includes: a) a first plurality of first-side, vapor deposition stations, located along the path, arranged for vapor deposition on the first side; and b) a second plurality of second-side, vapor deposition stations, located along the path, arranged for vapor deposition on the second side, wherein the order of stations alternates between the first-side, vapor deposition stations and the second-side, vapor deposition stations, and wherein the first plurality may be equal to the second plurality, and the first plurality may be greater than the second plurality by one. Additionally, in accordance with a preferred embodiment of the present invention, the apparatus includes a cold element of a controlled cooling rate, located very close to the substrate at any of the vapor deposition stations, on the side of the substrate opposite the vapor deposition station, for cooling the substrate by radiation between two bodies during vapor deposition. Further in accordance with a preferred embodiment of the present invention, the cold element includes a plurality of cold elements, each located very close to the substrate at any of the vapor deposition stations, on the side of the substrate opposite the vapor deposition station. Additionally, in accordance with a preferred embodiment of the present invention, the apparatus includes at least one cold element of a controlled cooling rate, located within any of the spools, for cooling the substrate by conduction, to reduce the substrate temperature during vapor deposition. Further in accordance with a preferred embodiment of the present invention, the at least one cold element includes two cold elements, each located within one of the spools. Additionally, in accordance with a preferred embodiment of the present invention, the apparatus includes at least one cold element of a controlled cooling rate, located within at least one of the guide rollers for cooling the substrate by conduction, to reduce the substrate temperature during vapor deposition. Further in accordance with a preferred embodiment of the present invention, the at least one cold element includes a plurality of cold elements, each located within one of the guide rollers. Further in accordance with a preferred embodiment of the present invention, the substrate is a foil. Additionally, in accordance with a preferred embodiment of the present invention, the substrate is a metal foil. Further in accordance with a preferred embodiment of the present invention, the substrate is aluminum foil. Additionally, in accordance with the present invention, the at least two first-side vapor deposition stations are arranged for any of the following: aluminum vapor reactive deposition, aluminum oxide vapor deposition, tantalum vapor reactive deposition, tantalum oxide vapor deposition, titanium vapor reactive deposition, and titanium oxide vapor deposition. Further in accordance with the present invention, the at least one second-side vapor deposition station is arranged for any of the following: aluminum vapor reactive deposition, aluminum oxide vapor deposition, tantalum vapor reactive deposition, tantalum oxide vapor deposition, titanium vapor reactive deposition, and titanium oxide vapor deposition. BRIEF DESCRIPTION OF THE DRAWINGS The present invention will be more clearly understood from the accompanying detailed description and drawings, in which same number designations are maintained throughout the figures for similar elements and in which: Fig. 1 is a schematic representation of a multi-stage, free-span, vapor deposition apparatus, in accordance with a preferred embodiment of the present invention; Fig. 2 is a schematic representation of a vapor deposition process of the apparatus of Fig. i; Fig. 3 is a schematic representation of a multi-stage, free-span, vapor deposition apparatus, in accordance with an alternate embodiment of the present invention; and Figs. 4A-4C are schematic representations of multi-stage, free-span, vapor deposition apparatus, in accordance with other alternate embodiments of the present invention. DEFINITION OF TERMS The present invention will be more clearly understood from the accompanying definitions: 1. High thermal emittance substance or layer: a substance or layer with an emittance greater than the emittance of the substrate. It is to be understood that whenever the term "high thermal emittance" of a substance is discussed herein, the high thermal emittance may be a result of the intrinsic emittance of the substance or a result of the condition of the surface of the substance. The emittance of the substance should typically be such that any degradation of desired properties of the substrate and/or one or more layers deposited thereon is prevented. 2. Thin layer: a layer thickness that does not cause the substrate's temperature to rise above a preselected maximum allowable temperature, for a given substrate and a given process. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Reference is now made to Fig. 1 , which is a schematic representation of multi-stage, free-span, vapor deposition apparatus 10, in accordance with a preferred embodiment of the present invention. Preferably, apparatus 10 includes the following components: a first spool 12, on which a substrate 18 is wound prior to vapor deposition, for unwinding and releasing substrate 18, for vapor deposition; a second spool 14, for receiving substrate 18 following vapor deposition, and for winding substrate 18 thereon; a plurality of guide rollers 16, located on a path 15, between first spool 12 and second spool 14, for guiding substrate 18; two first-side, vapor deposition stations 22 and 26, located along path 15, arranged for vapor deposition of vapor 20 on a first side of substrate 18; a second-side, vapor deposition station 24, located along path 15, between first-side vapor deposition stations 22 and 26, and arranged for vapor deposition of vapor 20 on a second side of substrate 18; and a vacuum chamber 11, for housing the aforementioned components and for providing a vacuum for the process of apparatus 10. Reference is now made to Fig. 2, which is a schematic representation of a method of controlling the temperature of a low thermal emittance substrate during a process of vapor deposition thereon of a preselected, high thermal emittance substance, in accordance with a preferred embodiment of the present invention. Preferably, vapor deposition is performed in stages: As a first stage, at station 22, a thin, first layer 40 of the preselected high thermal emissivity substance is applied, by vapor deposition, to a first side of substrate 18. First layer 40 has a thickness djj, which may be, for example, 0.5 - 1.5 microns. Because the layer is thin, the amount of heat discharge, due to vapor deposition, is low. Thus, substrate 18 is heated to more than a first predetermined temperature, Ti, which is preferably controlled by the thickness of the thin, first layer. Alternatively, the first predetermined temperature may be controlled by other parameters, for example, vapor deposition rate. As a second stage, at station 24, a relatively thick, second layer 42 of the preselected high thermal emittance substance is applied, by vapor deposition, to a second side of substrate 18. Second layer 42 has a thickness d 2 , which may be, for example, 3.5 - 4 microns. First layer 40 is operative to radiate excess heat away from substrate 18 and from second layer 42, thereby to heat substrate 18 to no more than a second predetermined temperature, T 2 . In accordance with a preferred embodiment of the present invention, Ti is close in value to T 2> as will be seen hereinbelow, in conjunction with Table 2. Preferably, as a third stage, at station 26, a relatively thick, third layer 44 of the preselected high thermal emittance substance is applied, by vapor deposition, to the first side of substrate 18, onto first layer 40. Third layer 44 has a thickness d 3 , which may be, for example, 2.5 - 3.5 microns. Preferably, d 2 « di +d , so the thickness of the aggregate layer of the first side is substantially the same as the second layer. In this stage, second layer 42 is operative to radiate excess heat away from substrate 18 and from third layer 44, thereby to heat substrate 18 to no more than a third predetermined temperature, T 3 . In accordance with a preferred embodiment of the present invention, Ti, T 2 , and T are generally close in value, as will be seen hereinbelow, in conjunction with Table 2. Alternatively, where coating on only one side of substrate 18 is desired, the third stage is not conducted. Reference is now made to Tables 1 and 2, which together illustrate the advantage of the present invention, for a case wherein substrate 18 is 30 microns thick and is moving at a speed of 0.38 m/min with vapor being deposited at a rate of 1120 A/s. Table 1 illustrates an experiment in accordance with the prior art method, wherein layers that are 3.5 microns thick are applied, by vapor deposition, to the two sides of substrate 18. During the application of the first layer to the first side of substrate 18, substrate temperature rises to 415°C. However, during the application of the second layer to the second side of substrate 18, the first layer is available and is operative to radiate excess heat away from substrate 18 and from second layer 42, thereby to heat substrate 18 to no more than 295°C. Table 2 illustrates an experiment in accordance with the present invention, wherein layers that are 3.5 microns thick are applied, in stages, by vapor deposition, to the two sides of substrate 18. During the first stage, thin layer 40, which is 1.25-microns thick is applied to the first side of substrate 18 and substrate temperature rises only to 312°C, since layer 40 is rather thin. During the second stage, layer 42 is applied to the second side of substrate 18 and substrate temperature rises only to 309°C, since layer 40 is operative to radiate excess heat away from substrate 18 and from second layer 42. During the third stage, layer 44 is applied to the first side of substrate 18, onto layer 40, and substrate temperature rises only to 258°C, since layer 42 is operative to radiate excess heat away from substrate 18 and from layer 44. TABLE 1 PRIOR ART VAPOR DEPOSITION TABLE 2 VAPOR DEPOSITIONIN ACCORDANCE WITH THE INVENTION Thus, in the experimental example of the present invention, peak substrate temperatures throughout a three-stage vapor deposition process did not rise above 312 C, whereas peak substrate temperature rose to 415 C in an experiment of the prior-art situation, for same substances, layer thickness, and substrate speed. Reference is now made to Table 3, which illustrates a prior-art experiment for a substrate speed of 0.12 m/min, with vapor being deposited at a rate of 350 A/s, and where the other conditions remain as in Table 1. As seen in Table 3, in order to achieve peak substrate temperatures similar to those of the present invention (Table 2), with prior-art technology, substrate speed must be reduced significantly. In the present example, it is reduced by more than a third, from 0.38 m/min to 0.12 m min, thus slowing down the process. TABLE 3 PRIOR ART VAPOR DEPOSITION Reference is now made to Table 4, which illustrates an experiment in accordance with the present invention for the same vapor deposition rate (1120 A/s) as in Table 2. The deposited layer is thinner with the substrate run at a speed of 0.96 m/min, about two and a half times faster than the substrate speed of 0.38 m/min of Table 2. All other conditions remain the same. As seen in Table 4, with the technology of the present invention, peak substrate temperatures remain relatively low even for the higher substrate speed. TABLE 4 VAPOR DEPOSITION IN ACCORDANCE WITH THE INVENTION In accordance with the present invention, substrate 18 may be a metallic foil, for example, aluminum foil. For example, the aluminum foil is about 30 microns in thickness and the layer thickness by vapor deposition is about 3 to 5 microns. In accordance with the present invention, vapor deposition stations 22, 24 and 26 (Figs. 1 and 3) are arranged for aluminum vapor reactive deposition, wherein the vapor includes a mixture of aluminum metal and oxygen. Alternatively, vapor deposition stations 22, 24 and 26 are arranged for titanium vapor reactive deposition, wherein the vapor includes a mixture of titanium metal and oxygen. Alternatively, vapor deposition stations 22, 24 and 26 are arranged for aluminum oxide vapor deposition. Alternatively, vapor deposition stations 22, 24 and 26 are arranged for titanium oxide vapor deposition, or of any suitable material, as known in the art. Reference is now made to Fig. 3, which is a schematic representation of multi-stage, free-span, vapor deposition apparatus 50, in accordance with an alternate embodiment of the present invention. Apparatus 50 includes at least one cold element 30, of a controlled cooling rate, preferably located within spool 12, for providing conductive heat removal to substrate 18. Alternatively, or additionally, a cold element 30 may be located within spool 14. Alternatively or additionally, cold elements 31, of a controlled cooling rate, may be located within guide rolls 16 at the vapor deposition stations, for providing conductive heat removal to substrate 18. Alternatively or additionally, cold elements 31 may be located within other guide rolls 16. Alternatively or additionally, at least one cold element 28, of a controlled cooling rate, may be located very close to the substrate at a vapor deposition station, on the side of the substrate opposite the vapor deposition station, for cooling the substrate during vapor deposition. In accordance with the present invention, cold elements 28, 30, and 31 of controlled cooling rates may be cooled by conventional, Rankin-like refrigeration cycles. Alternatively, they may be cooled by thermoelectric cooling. Heat dissipation by radiation from substrate 18 to cold element 28 is described by the following expression: Qdissipation ∞ ε 18 x ε 28 ( i8 ~ T 2 g ) wherein, Q d i ss i pat i on denotes the amount of heat transfer by radiation between substrate 18 and cold element 28, 8i 8 and ε 8 denote the thermal emittances of substrate 18 and cold element 28, respectively, and T| 8 and T 28 denote the absolute temperatures of substrate 18 and cold element 28, respectively. For effective heat dissipation, 8i 8 and ε 28 should be high, so element 28 may be painted black, and the difference, TJS - T 28 should be high, therefore T 28 is as low as possible. The method of heat dissipation with cold element 28 will be more effective at vapor deposition station 24, where 8i 8 is relatively high, than at vapor deposition station 22, where 8j 8 is relatively low. In accordance with the present invention, the apparatus may be used also when only one-sided vapor deposition is needed. A thin, first layer is applied at vapor deposition station 22 (Figs. 1 and 3) in order to increase the thermal emittance of substrate 18, and a second layer of a desired thickness is then applied to the second side, wherein the thin first layer is operative to radiate excess heat away from substrate 18 and from the second layer. In accordance with the present invention, more than three vapor stations and three vapor deposition stages may be used, thus reducing the heat load that needs to be dissipated in each stage, and gradually increasing the thermal emittance for heat dissipation, with each stage. Alternatively, free-span, vapor deposition apparatus which has only two vapor deposition stations, for first-side and second-side vapor deposition, may be used. Vapor deposition is applied in two or more passes of substrate 18 through the apparatus. For example, substrate 18 may be run through the apparatus for a first, partial vapor deposit on both sides, and then again, for a final vapor deposition on both sides, immediately after the first run, or any time after the first run. Reference is now made to Fig. 4A, which is a schematic representation of free-span, multi-stage, vapor deposition apparatus 70, for increased vapor deposition efficiency, in accordance with an alternate embodiment of the present invention. Vapor deposition efficiency is normally defined as the ratio of the vapor mass deposited on the substrate to the total vapor mass evaporated for a given apparatus. Vapor distribution from a metallic source can be simulated using a modification of Lambert's law for a radiation source, as shown by vapor 20 of Fig. 4A. In order to minimize edge, or tangential losses, and increase the vapor deposition efficiency, guide rollers 16 of apparatus 70 are arranged so as to guide substrate 18 through a path 72 that collects rays of vapor 20 from a wide angle α, which approaches 180 . Reference is now made to Fig. 4B, which is a schematic representation of vapor deposition apparatus 80, for increased vapor deposition efficiency, in accordance with an alternate embodiment of the present invention. In Fig. 4B, substrate 18 is supported by drums 82 and 84 and by guide rollers 16. In order to increase the vapor deposition efficiency, guide rollers 16 of apparatus 80 are arranged so as to guide substrate 18 through a path 86 that collects rays of vapor 20 from a wide angle β, which approaches 180°. Reference is now made to Fig. 4C, which is a schematic representation of vapor deposition apparatus 90, for increased vapor deposition efficiency, in accordance with an alternate embodiment of the present invention. In Fig. 4C, substrate 18 is supported by drums 92 and 94 and by guide rollers 16. In order to increase the vapor deposition efficiency, guide rollers 16 of apparatus 90 are arranged so as to guide substrate 18 through a path 96 that collects rays of vapor 20 from a wide angle γ. It will be appreciated by persons skilled in the art, that the scope of the present invention is not limited to a substrate in foil form. The methods of vapor deposition and of vapor reactive deposition of the present invention may be applied to a substrate supported by apparatus other than the free-span apparatus. For example, vapor deposition, or vapor reactive deposition may be applied to a stationary substrate in a form of a chip, held, for example, in window-frame like apparatus, which may revolve on a hinge for vapor deposition of first and second sides. It will be appreciated by persons skilled in the art, that the scope of the present invention is not limited to improving heat dissipation in vacuum deposition systems. The methods of vapor deposition and of vapor reactive deposition described herein above may be applied to achieve a desired surface roughness of a deposited substance, in addition to controlling the morphology of any second and additional layers deposited on a first thin layer. It will be further appreciated by persons skilled in the art, that the scope of the present invention is not limited by what has been specifically shown and described hereinabove, merely by way of example. Rather, the scope of the invention is limited solely by the claims, which follow.

Claims: CLAIMS 1. A method of controlling the temperature of a low thermal emittance substrate during a process of vapor deposition thereon, which includes: a) a first step of forming, by vapor deposition of a preselected substance on a first side of the substrate, a high thermal emittance layer; and b) a second step of forming, by vapor deposition on a second side of the substrate, a layer of a preselected substance, wherein the layer on the first side is operative to radiate excess heat away from the substrate, thereby preventing heating of the substrate to more than a predetermined temperature. 2. A method according to claim 1, wherein said first step further includes forming, by vapor deposition on the first side of the substrate, a thin layer of the high thermal emittance substance. 3. A method according to claim 1, wherein the layer on the first side is further operative to radiate excess heat away from the layer on the second side, in addition to radiating heat away from the substrate. 4. A method according to claim 1, wherein the substance of the second side is of a preselected, high thermal emittance substance. 5. A method according to claim 4, wherein in said first and second steps the preselected substances are the same. 6. A method according to claim 1 and further including a third step of forming, by vapor deposition onto the layer formed on the first side of the substrate, a further layer of the preselected substance thereon. 7. A method according to claim 1 and further including a first-side step of forming, by vapor deposition onto the layer formed on the first side of the substrate, a further layer of the preselected substance thereon. 8. A method according to claim 7 and further including repeating said first-side step until a layer of a desired thickness is formed on the first side. 9. A method according to claim 1 and further including a second-side step of forming, by vapor deposition onto the layer formed on the second side of the substrate, a further layer of the preselected substance thereon. 10. A method according to claim 9 and further including repeating said second-side step until a layer of a desired thickness is formed on the second side. 1 1. A method according to claim 1 and further including a step of varying at least one of the following: the thickness of the layer on the first side, the thickness of the layer on the second side, the rate of vapor deposition onto the first side, and the rate of vapor deposition onto the second side. 12. A method according to claim 1 and further including cooling the substrate by thermal radiation from the substrate to a cold element. 13. A method according to claim 1 and further including moving the substrate on free-span apparatus for vapor deposition. 14. A method according to claim 13 and further including varying the substrate speed to control the substrate temperature. 15. A method according to claim 13 and further including cooling the substrate by conduction to a cold element of the free-span apparatus. 16. A method according to claim 1 and further including supporting the substrate on stationary apparatus for vapor deposition. 17. A method according to claim 16 and further including cooling the substrate by conduction to a cold element of the stationary apparatus. 18. A method according to claim 1 , wherein vapor deposition includes reactive vapor deposition. 19. Multi-stage, free-span, vapor deposition apparatus, which includes: a) a first spool, on which a substrate is wound prior to vapor deposition, for unwinding and releasing the substrate, for vapor deposition; b) a second spool, for receiving the substrate following vapor deposition, and for winding the substrate thereon; c) a plurality of guide rollers, located on a path between said first spool and said second spool, for guiding the substrate; d) at least two first-side, vapor deposition stations, located along said path, arranged for vapor deposition on a first side of the substrate; e) at least one second-side, vapor deposition station, located along said path, between said at least two first-side vapor deposition stations, and arranged for vapor deposition on a second side of the substrate; and f) a vacuum chamber for housing aforementioned components, and for vapor deposition. 20. Apparatus according to claim 19 and further including: a) a first plurality of first-side, vapor deposition stations, located along said path, arranged for vapor deposition on said first side; and b) a second plurality of second-side, vapor deposition stations, located along said path, arranged for vapor deposition on said second side, wherein the order of stations alternates between said first-side, vapor deposition stations and said second-side, vapor deposition stations, and wherein said first plurality may be equal to said second plurality, and said first plurality may be greater than said second plurality by one. 21. Apparatus according to claim 19 and further including a cold element of a controlled cooling rate, located very close to the substrate at any of said vapor deposition stations, on the side of the substrate opposite said vapor deposition station, for cooling the substrate by radiation between two bodies during vapor deposition. 22. Apparatus according to claim 21, wherein said cold element includes a plurality of cold elements, each located very close to the substrate at any of said vapor deposition stations, on the side of the substrate opposite said vapor deposition station. 23. Apparatus according to claim 19 and further including at least one cold element of a controlled cooling rate, located within any of said spools, for cooling the substrate by conduction, to reduce the substrate temperature during vapor deposition. 24. Apparatus according to claim 23, wherein said at least one cold element includes two cold elements, each located within one of said spools. 25. Apparatus according to claim 19 and further including at least one cold element of a controlled cooling rate, located within at least one of said guide rollers for cooling the substrate by conduction, to reduce the substrate temperature during vapor deposition. 26. Apparatus according to claim 25, wherein at least one cold element includes a plurality of cold elements, each located within one of said guide rollers. 27. Apparatus according to claim 19, wherein the substrate is a foil. 28. Apparatus according to claim 27, wherein the substrate is a metal foil. 29. Apparatus according to claim 28, wherein the substrate is aluminum foil. 30. Apparatus according to claim 19, wherein said at least two first-side vapor deposition stations are arranged for any of the following: aluminum vapor reactive deposition, aluminum oxide vapor deposition, tantalum vapor reactive deposition, tantalum oxide vapor deposition, titanium vapor reactive deposition, and titanium oxide vapor deposition. 31. Apparatus according to claim 19, wherein said at least one second-side vapor deposition station is arranged for any of the following: aluminum vapor reactive deposition, aluminum oxide vapor deposition, tantalum vapor reactive deposition, tantalum oxide vapor deposition, titanium vapor reactive deposition, and titanium oxide vapor deposition.

Inventors: FINKELSTEIN ZVI, KATSIR DINA, TARTAKOVSKY ISRAEL, FINKELSTEIN, ZVI, KATSIR, DINA, TARTAKOVSKY, ISRAEL
Applicants: ACKTAR LTD, FINKELSTEIN ZVI, KATSIR DINA, TARTAKOVSKY ISRAEL, ACKTAR LTD., FINKELSTEIN, ZVI, KATSIR, DINA, TARTAKOVSKY, ISRAEL
Application year: 2001
Main classification: B05D1
IPC codes: B05D1, B05D5, C23C14, C23C16