USING DEUTERATED SOURCE GASES TO FABRICATE LOW LOSS GeSiON SiON WAVEGUIDES

Abstract: The present invention provides a method of manufacturing optical devices which includes the steps of providing a substrate and forming at least one optical layer on the substrate. The optical layer is formed by a CVD process which includes a deuterated source gas. The present invention also provides an optical device which includes a substrate and an optical layer including deuterium.

Description: USING DEUTERATED SOURCE GASES TO FABRICATE LOW LOSS GeSiON SiON WAVEGUIDES BACKGROUND OF THE INVENTION 1. Field of Invention The present invention is directed generally to the manufacture of optical waveguides and more particularly to the use of deuterated source gases to manufacture optical waveguides. 2. Description of the Related Art Practical optical devices must be fabricated so as to direct the light energy. Commonly, this is achieved by creating a waveguide. In the waveguide, a cladding layer of lower refractive index (typically 1.44) directs light by internal reflectance to an optical corέ of higher refractive index (typically 1.45-1.5). Both the core and cladding layer can be made from many different materials. Common materials include glasses of SiO 2 -GeO 2 , SiO 2 -B 2 O 3 -P 2 O 5 , SiO 2 -GeO 2 -B 2 O 3 -P 2 O 5 , SiO 2 and SiON. Silicon dioxide, silicon nitride and silicon oxynitride are materials which are particularly valued for their optical properties, in particular their high optical transparency and wide range of refractive indices (1.45-2.5). These materials are used in a host of optical devices. The devices include, for example, planar waveguides, arrayed waveguides (AWG), wavelength demultiplexers, power splitters, optical couplers, phasers, and variable optical attenuators (VOA). Typically, chemical vapor deposition (CVD) is used to deposit layers of silicon dioxide, silicon nitride or silicon oxynitride. In the CVD process, the substrate is placed on a heated susceptor in a quartz reaction chamber and then the reactant gases are introduced into the chamber. Typically, the gases react on the surface of the substrate and form a deposited layer. However, some reactions may also occur as the gases flow into the chamber. The most common gases for the deposition of silicon dioxide, silicon nitride and silicon oxynitride are silane (SiH ), chlorinated silane (SiH x Cl 4 -χ), nitrous oxide (N 2 O), ammonia (NH 3 ) and nitrogen (N 2 ). These gases are inexpensive and can be purchased in great abundance. Although the CVD process is the preferred process for depositing many of the materials used to manufacture optical devices, it is not without problems. The use of ammonia and silane in the production of silicon nitride and silicon oxynitride results in the incorporation of large amounts of hydrogen (up to 20 at% for silicon nitride) in the optical film. The incorporated hydrogen generates significant optical losses at the 1550 nm optical communication band due to a strong overtone of the N-H bond. Figure 1 illustrates the loss spectrum of conventionally processed silicon oxynitride, i.e., the loss over a range of wavelengths. The peak in loss is due to N-H absorption. In conventional manufacturing processes, the silicon oxynitride contains a significant amount of hydrogen. The figure clearly illustrates the deleterious effect of the overtone of the N-H bond. The center .of the loss peak occurs at a wavelength of approximately 1510 nm. This is just 40 hm from 1550 nm, a preferred optical communications wavelength. It is possible to remove much of the entrapped hydrogen with high temperature thermal annealing. However, the optical SiON film can blister and crack at the high temperature, rendering the device useless. Therefore, it would be desirable to develop a method to manufacture optical devices which did not result in the incorporation of hydrogen in the optical SiON film and high losses at 1550 nm. Furthermore, it would be desirable to develop a process having the benefits of the speed and control of the conventional CVD process without resorting to a high temperature anneal to drive out the hydrogen. SUMMARY OF THE INVENTION The present invention provides a method of manufacturing optical devices comprising providing a substrate and forming at least one optical layer on the substrate by a CVD process including at least one deuterated source gas. The present invention also provides an optical device comprising a substrate and an optical layer including deuterium. BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a plot of the loss spectrum of silicon oxynitride in the vicinity of the N-H absorption peak. Figure 2 is a plot of the FTIR spectra of GeSiON films deposited with ND 3 and with NH 3 . Figure 3 is a cross section of an embodiment of the invention. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention is directed to reducing the optical transmission loss in a waveguide by reducing the hydrogen content in the waveguide. Figure 3 shows the cross section of a planar waveguide manufactured according to a preferred embodiment of the present invention. In this embodiment, an insulating buffer layer 102 is deposited on a substrate 101. A waveguide core 103 including deuterium is then deposited on the buffer layer ^102 and the entire structure is coated with a cladding layer 104. As demonstrated below, the use of deuterated source gases is effective in reducing the hydrogen content of the waveguide. Silicon is the preferred material for the substrate 101. However, the substrate 101 may be made out of any material suitable for supporting the waveguide core 103. Example substrate materials include, but are not limited to, GaAs, InP, SiO 2 , Si 3 N 4 , ceramics and plastics. The preferred material for the buffer layer 102 is silicon oxynitride (SiON) or germanium doped silicon oxynitride (GeSiON). More preferably, the material for the buffer layer 102 is deuterated silicon oxynitride (SiON) or deuterated germanium doped silicon oxynitride (GeSiON). However, any suitable material can be used. For optimum results, the buffer layer 102 should have an index of refraction less than the index of refraction of the waveguide core 103. The buffer layer 102 may be omitted if the substrate is formed from a suitable material with a lower index of refraction than the core. The preferred material for the cladding layer 104 is SiON or GeSiON. More preferably, the preferred material for the cladding layer 104 is deuterated SiON or deuterated GeSiON. However, any suitable material, such as plastics for example, can be used. For optimum results, the cladding layer 104 should have an index of refraction less than the index of refraction of the waveguide core 103. The core 103 of the optical waveguide preferably comprises deuterated germanium doped silicon oxynitride (Ge w Si z O x N y ), where the sum of w, x, y and z is equal to 1. More preferably, the core 103 comprises deuterated silicon oxynitride (Si z O x N y ), where the sum of x, y and z is equal to 1. The deuterium replaces hydrogen and thereby reduces the hydrogen content in the waveguide. The index of refraction of the core is preferably between 1.44 and 2.2. More preferably, the index of refraction of the core is between 1.6 and 1.8. Furthermore, transmission losses due to attenuation are preferably less than 4.0 dB/cm in multimode slab waveguides and less than 2.0 dB/cm in single mode slab waveguides. More preferably, the transmission losses due to attenuation are less than 1.5 dB/cm in multimode slab waveguides and less than 0.2 dB/cm in single mode slab waveguides at 1550 nm. By using deuterium source gases in manufacturing the core 103, the hydrogen content of the core 103 is reduced and consequently the optical loss is reduced. This is shown, for example, by the Fourier transform infrared (FTIR) spectra of germanium doped silicon oxynitride (GeSiON) films are illustrated in Figure 2. A film deposited with NH 3 is represented by the bottom spectrum in Figure 2. This spectrum shows, like Figure 1, that the NH stretch is at 3310 cm-1 (3.02 μm), which places the overtone absorption peak approximately at 1510 nm, which is near the communications wavelength. In contrast, the top spectrum in figure 2 represents a the germanium doped silicon oxynitride film formed with deuterated ammonia (ND 3 ) instead of regular ammonia (NH 3 ). As shown, the absorption peak is shifted from 3.02 μm to 4.08 μm. The overtone peak therefore shifts to 2004 nm, far from 1550 nm, the optical communications wavelength, by substituting ND 3 for the NH 3 source gas during deposition. The source gas may be partially deuterated. The use of deuterated silane, deuterated disilane and deuterated germane produce similar results. These source gases may also be partially deuterated. The use of any of these gases alone or in combination is beneficial because losses at 2004 nm due to the N-D bond are not significant for communications at 1550 nm. The use of the deuterated core material has been described and illustrated by way of an optical waveguide. However, this is but one device which can be fabricated according to the present invention. Other devices which may also benefit from the material of the present invention include, but are not limited to, an optical waveguide, an arrayed waveguide, a wavelength demultiplexer, a power splitter, an optical coupler, a phaser, and a variable optical attenuator. The core of the optical waveguide is preferably deposited by chemical vapor deposition (CVD). Low pressure CVD (LPCVD), atmospheric pressure CVD (APCVD) and plasma assisted CVD (PECVD) can be used. However, PECVD is the preferred method. One example of PECVD deposition is described below. EXAMPLES Deuterated si-licon oxynitride and deuterated germanium doped silicon oxynitride films were deposited with an STS Multiflex PECVD system. This system is a parallel plate reactor where' the precursor gases enter through an array of holes in the top electrode (showerhead) and the sample rests on the bottom electrode. The bottom electrode is a non-rotating heated platen. The reaction gases included silane (SitL), germane (GeH ), nitrous oxide (N 2 O), deuterated ammonia (ND 3 ) and nitrogen (N 2 ). Regular ammonia (NH 3 ) was also available for making the comparative examples. The refractive index, optical propagation loss and film thickness were determined with a prism coupling system. An initial series of thin germanium doped silicon oxynitride films were deposited with and without deuterated ammonia to evaluate the reduction in waveguide loss. These films were deposited on Si(100), SiO 2 and Corning 1737 glass substrates to form multimode slab waveguides. The deposition parameters for these films are in Table 1. TABLE 1 Films from the initial round of GeSiON films with ND 3 were smooth and uniform with a slight green coloration as deposited. The film thicknesses (t, μm) and refractive indexes (n) wέre measured by prism coupling at two wavelengths, 652 nm and 1550 nm. The prism coupling measurements demonstrate that the thickness and indexes are very near that of films deposited with NH 3 . Table 2 summarizes the thickness and refractive index measurements. TABLE 2 Table 3 is a comparison between attenuation measurements on multimode slab germanium doped silicon oxynitride waveguides deposited with ND 3 (Examples A to D) and multimode slab germanium doped silicon oxynitride waveguides deposited with NH 3 (Examples E and F). TABLE 3 The optical propagation loss in multimode slab waveguides ranged from 1.3 to 3.5 dB/cm for films deposited with ND 3 . By comparison, the propagation loss in comparable films deposited with NH 3 ranged from 8-11 dB/cm. Table 4 summarizes and compares the compositions of the GeSiON films deposited with ND 3 with those deposited with NH 3 . TABLE 4 The samples prepared with ND 3 have significantly less hydrogen incorporation than the samples prepared with NH 3 . Samples deposited with ND 3 show lower nitrogen levels. This is believed to result from a lower ND 3 flow than NH 3 because the flow controllers were not re-normalized. A second series of thin germanium doped silicon oxynitride films were deposited with deuterated ammonia to evaluate the reduction in waveguide loss. In this series, two samples were deposited with a waveguide core over a 13-15 μm cladding layer on a silicon wafer to form a single mode waveguide. The deposition parameters are summarized in Table 5. TABLE 5 As in the initial series of films, the film thicknesses and refractive indexes were measured by prism coupling at two wavelengths, 652 nm and 1550 nm. The prism coupling measurements demonstrate that the thickness and indexes are very near that of films deposited with NH 3 . Table 6 summarizes the thickness and refractive index measurements. TABLE 6 Table 7 is a comparison between attenuation measurements on single mode slab germanium doped silicon oxynitride waveguides deposited with ND (Examples G and H) and single mode slab germanium doped silicon oxynitride waveguides deposited with NH 3 (Examples I and J). TABLE 7 The optical propagation loss in single mode waveguides ranged from 1.3 to 2.0 dB/cm for films deposited with ND 3 . By comparison, the propagation loss in comparable films deposited with NH 3 was 7 dB/cm. A third series of deuterated thin film single mode waveguides were manufactured to study the effect of various GeSiON/SiON core/cladding configurations. In this series, three combinations were tested. These include, GeSiON core/clad, SiON core/clad and SiON core on GeSiON clad. The deposition parameters are summarized in Table 8. TABLE 8 In the third series, both the propagation loss and the wafer warpage was measured. The results of these experiments are summarized in Table 9. TABLE 9 The first sample (Example K), a GeSiON core on a GeSiON cladding layer, exhibits approximately a 1 dB/cm propagation loss with low wafer warpage. The second sample (Example L), a SiON core on a SiON cladding layer, had a propagation loss near the 0.2 dB/cm detection limit of the test equipment. However, the wafer warpage is very high. Depositing a SiON core on a GeSiON cladding, the third sample (Example M), resulted in a slightly higher loss of 0.38 dB/cm while reducing wafer warpage. Depositing a SiON core on a GeSiON cladding using deuterated ammonia and deuterated silane, the fourth sample (Example N), resulted in propagation losses below 0.2 dB/cm. However, wafer warpage increased significantly. The foregoing description of the invention has been presented for purposes of illustration and description. It is not intended to be exhaustive or to limit the invention to the precise form disclosed, and modifications and variations are possible in light of the above teachings or may be acquired from practice of the invention. The drawings and description were chosen in order to explain the principles of the invention and its practical application. It is intended that the scope of the invention be defined by the claims appended hereto, and their equivalents.

Claims: WE CLAIM: 1. A method of manufacturing optical devices comprising: providing a substrate; and forming at least one optical layer on said substrate by a CVD process including at least one deuterated source gas. 2. The method of claim 1, wherein the deuterated source gas is selected from the group consisting of deuterated ammonia, deuterated silane, deuterated disilane and deuterated germane. 3. The method of claim 2, wherein the source gas is partially deuterated. 4. The method of claim 1, wherein the CVD process is selected from the group consisting of APCVD, LPCVD and PECVD. 5. The method of claim 1, wherein said step of forming at least one optical layer includes forming an optical layer with a wavelength of an overtone about 2004 nm. 6. The method of claim 1, wherein said step of forming at least one optical layer includes forming an optical layer with an index of refraction between 1.45 and 2.2. 7. The method of claim 6, wherein said step of forming at least one optical layer includes forming an optical layer with an index of refraction between 1.6 and 1.8. 8. The method of claim 1, wherein said step of forming at least one optical layer includes forming a layer of silicon oxynitride. 9. The method of claim 1, wherein said step of forming at least one optical layer includes forming a layer of germanium doped silicon oxynitride. 10. The method of claim 1, wherein said optical layer exhibits propagation losses below 4 dB/cm. 11. The method of claim 1, wherein said optical layer exhibits propagation losses below 0.2 dB/cm. 12. The method of claim 8, wherein said optical layer exhibits propagation losses below 4 dB/cm. 13. The method of claim 8, wherein said optical layer exhibits propagation losses below 0.2 dB/cm. 14. The method of claim 8, further comprising: forming a cladding layer. 15. The method of claim 14, wherein said cladding layer is either deuterated silicon oxynitride or deuterated germanium doped silicon oxynitride. 16. The method of claim 14, further comprising: forming a buffer layer. 17. The method of claim 16, wherein said buffer layer is either deuterated silicon oxynitride or deuterated germanium doped silicon oxynitride. 18. An optical device comprising: a substrate; and an optical layer comprising deuterium. 19. The optical device of claim 18, wherein the optical layer comprises deuterated silicon oxynitride. 20. The optical device of claim 18, wherein the optical layer comprises deuterated silicon oxynitride or deuterated germanium doped silicon oxynitride. 21. The optical device of claim 18, wherein the device further comprises a cladding layer. 22. The optical device of claim 21, wherein the cladding layer comprises deuterated silicon, oxynitride or deuterated germanium doped silicon oxynitride. 23. The optical device of claim 22, wherein the device further comprises a buffer layer. 24. The optical device of claim 23, wherein the buffer layer comprises deuterated silicon oxynitride or deuterated germanium doped silicon oxynitride. 25. The optical device of claim 18, wherein the wavelength of an overtone in the patterned optical layer is about 2004 nm. 26 The optical device of claim 18, wherein said optical layer exhibits propagati on losses below 4 dB/cm. 27 The optical device of claim 18, wherein said optical layer exhibits propagation losses below 0.2 dB/cm. 28 The optical device of claim 22, wherein said optical layer exhibits propagation losses below 4 dB/cm. 29. The optical device of claim 22, wherein said optical layer exhibits propagation losses below 0.2 dB/cm. 30. The optical device of claim 22, wherein said optical layer exhibits an index of refraction between 1.45 and 2.2. 31. The optical device of claim 22, wherein said optical layer exhibits an index of refraction between 1.6 and 1.8. 32. The optical device of claim 18, wherein said optical device is selected from the group consisting of an optical waveguide, an arrayed waveguide, a wavelength demultiplexer, a power splitter, an optical coupler, a phaser, and a variable optical attenuator.

Inventors: AKWANI IKERIONWU A, BELLMAN ROBERT A, GRANDI THOMAS P, SACHENIK PAUL A, AKWANI, IKERIONWU, A., BELLMAN, ROBERT, A., GRANDI, THOMAS, P., SACHENIK, PAUL, A.
Applicants: CORNING INC, CORNING INCORPORATED
Application year: 2001
Main classification: G02B6
IPC codes: C03C17, C23C16, G02B6