DIELECTRIC CERAMIC COMPOSITION FOR MICROWAVE USE

Abstract: An object of the present invention is to provide a dielectric ceramic composition for microwave usehaving a relative permittivity εr of 35 to 45, Qf0 value of more than 50,000 GHz (at 7 GHz), and dielectric characteristic of tau f=0+/-10 ppm/ DEG C. In a La2O3.Al2O3.SrO.TiO2 based ceramic composition, by adding a specific quantity of Ga2O3 to this ceramic composition, the Qf0 value is increased and by further adding a specific amount of Pr2O3, it becomes possible to control the tau f value.

Description: DESCRIPTION DIELECTRIC CERAMIC COMPOSITION FOR MICROWAVE USE TECHNICAL FIELD The present invention relates to a dielectric ceramic composition for microwave use having a relative permittivity εr of 35 to 45, Qfo value of at least 50,000 GHz (at 7 GHz) and a dielectric characteristic of xf = 0 + 10 ppm/°C employed for microwave communication filters, milliwave communication filters, oscillators, inductor antennas, and frequency adjusting rods etc. BACKGROUND ART Dielectric ceramic compositions are widely employed in the high- frequency region such as microwaves and milliwaves in for example dielectric resonators, dielectric substrates for MIC and waveguides. The characteristics that these are required to have are: (1) a large relative permittivity εr to meet demands for miniaturization, since the wavelength is reduced to l/εrl/2 in a dielectric, (2) low dielectric loss at high frequency i.e. high Q value, and (3) small and stable temperature coefficient xf of resonance frequency. Conventional examples of such a dielectric ceramic composition are La-Ti-Al-O based compositions (see Japan, J. Appl. Phys. 36 (1997) 6814), which have εr = 36, Qfo value = 45,000 GHz, and xf=-2 ppm/°C, but their Qfo values are low. Also, in the case of Ba(Zni /3 Nb 2 / 3 )O 3 based compositions (published in: Electronics/Ceramics September 1993 September page 3), εr=41, Qfo value = 86,000 GHz, andxf= +31 ppm/°C, but a dielectric ceramic composition of small xf is not obtained. Recently, La2θ 3 -Al2θ 3 -SrO-Tiθ2 based composition or a 2 θ 3 -Al2θ 3 -S O-Tiθ 2 -CaO based composition or composition containing one or two or more of Ce, Nb, Ta, Y, Zr, V, Cr, Mo, W, Co, Ni, Cu, Zn, Sn, Bi, B, or Si in the aforementioned ceramic compositions (see Laid-open Japanese Patent Publication H. 11-130528) has been proposed. Regarding the dielectric characteristic of these ceramic compositions, they have excellent dielectric characteristics with εr of more than 30, Qfo value more than 25,000 GHz (at 1 GHz) and xf less than + 30 (ppm/°C), but dielectric ceramic compositions of low xf are not obtained. Recently, with increasingly severe demands for miniaturization of portable terminal electronic equipment, materials of even better dielectric performance are being demanded. DISCLOSURE OF THE INVENTION In view of the foregoing demands, an object of the present invention is to provide a dielectric ceramic composition for microwave use having a relative permittivity εr of 35 to 45, Qfo value of at least 50,000 GHz (at 7 GHz) and a dielectric characteristic of xf= O± 10 ppm/°C. The present inventors studied various compositions etc with the object of obtaining a material capable of being controlled to a relative permittivity εr of 35 to 45, Qfo value of at least 50,000 GHz (at 7 GHz) and a dielectric characteristic of xf = 0 + 10 ppm/°C, and, as a result, discovered that, with a La2θ 3 -Al2θ3-SrO-Tiθ2 based ceramic composition, by adding a specific quantity of Ga 2 θ 3 to the aforesaid ceramic composition, the Qfo value could be increased, and, by further adding a specific quantity of Pr 2 θ 3 , control of the xf value became possible, so that a ceramic composition capable of being controlled to a relative permittivity εr of 35 to 45, Qfo value of at least 50,000 GHz (at 7 GHz) and a dielectric characteristic of xf=0± 10 ppm/°C could be obtained, and thereby perfected the present invention. Specifically, the present invention consists in a dielectric ceramic composition for microwave use characterized in that the compositional formula is expressed by aAl2θ 3 -bGa2θ 3 -cTiθ2-dSrO-eLa 2 θ 3 -f r2θ 3 , where a, b, c, d, e and f representing the mol ratios satisfy the following values (the case where b and fare simultaneously 0 is excluded). a + b + c + d + e + f = 1 0.079 < a ≤ 0.167 0 ≤ b ≤ 0.017 0.333 ≤ c ≤ 0.412 0.333 ≤ d ≤ 0.412 0.035 ≤ e ≤ 0.167 O ≤ f ≤ 0.101 BEST MODE FOR CARRYING OUT THE INVENTION The reasons why, in the present invention, if the respective mol ratios of AI 2 O 3 , Ga 2 θ 3 , Tiθ2, SrO, La2θ 3 and Pr2θ 3 are a, b, c, d, e, f, these mol ratios are respectively restricted to 0.079 ≤ a ≤ 0.167, 0 ≤ b ≤ 0.017, 0.333 ≤ c ≤ 0.412, 0.333 ≤ d ≤ 0.412, 0.035 ≤ e ≤ 0.167, and 0 < f ≤ 0.101 are as follows. If a is less than 0.079, εr increases but the Qfo value is less than 50,000 GHz, but if it exceeds 0.167 mol ratio, εr is lowered and drops to 35 or lower, which is undesirable. If b exceeds 0.017 mol ratio, the Qfo value is lowered, resulting in the Qfo value dropping below 50,000 GHz, which is undesirable. If c is less than 0.333 mol ratio, εr is lowered, falling to 35 or lower, which is undesirable; if it exceeds 0.412 mol ratio, εr increases, but the Qfo value drops below 50,000 GHz, which is undesirable. If d is less than 0.333 mol ratio, εr is lowered, falling to 35 or lower, which is undesirable; if it exceeds 0.412 mol ratio, εr increases, but the Qfo value drops below 50,000 GHz, which is undesirable. If e is less than 0.035 mol ratio, εr is increased, but the Qfo value drops below 50,000 GHz, which is undesirable; if it exceeds 0.167 mol ratio, εr is lowered, falling to 35 or lower, which is undesirable. If f exceeds 0.101 mol ratio, xf becomes quite large, becoming 10 ppm/°C or more, which is undesirable. Examples Example 1 As starting raw-material powders, high purity powder of AI 2 O 3 , Ga2θ 3 , Tiθ2, SrCO 3 , La2θ 3 and PrβOn were blended as shown in Table 1, calcined for two hours at 1200 °C, then pulverized to 1.0 μm then granulated by adding a binder and molded into discs of diameter 12 mm X thickness 25 mm with a molding pressure of 1.5 T/cm2. After this, the binder was removed and sintering was performed for four hours at 1500 °C in the atmosphere. The sintered body obtained was then cut to a diameter of 10 mm X thickness 4.5 mm to obtain samples. The samples of the Examples which were obtained were evaluated in regard to dielectric performance by the H&C method using a network analyzer. The results are shown in Table 2. Comparative Example 1 For comparison, powder of high purity identical with that of Example 1 was blended as shown in Table 1, a molding manufactured, and samples manufactured by obtaining a sintered body. The samples of the Comparative Examples which were obtained were evaluated in regard to dielectric performance by the H&C method using a network analyzer. The results are shown in Table 2. Table 1 Table 2 INDUSTRIAL APPLICABILITY According to the present invention, in a La2θ3-Ai2θ3-SrO-Tiθ 2 based ceramic composition, by adding specific amounts of Ga2θ 3 and Pr2θ 3 , a dielectric ceramic composition for microwave use having relative permittivity εr of 35 to 45 and Qfo value of more than 50,000 GHz (at 7 GHz), and dielectric characteristic of xf = 0 + 10 ppm/°C can be provided; this is a very suitable material for filters for microwave communication, filters for milliwave communication, oscillators, dielectric antennas, and frequency regulating rods etc.

Claims: CLAIMS 1. A dielectric ceramic composition for microwave use characterized in that the compositional formula is expressed by aAl2θ 3 -bGa2θ 3 -cTiθ2- SrO-eLa 2 θ3' Pr2θ 3 , where a, b, c, d, e and f representing the mol ratios satisfy the following values (the case where b and fare simultaneously 0 is excluded), a + b + c + d + e + f = 1 0.079 < a ≤ 0.167 0 ≤ b ≤ 0.017 0.333 ≤ c ≤ 0.412 0.333 ≤ d ≤ 0.412 0.035 ≤ e ≤ 0.167 O ≤ f ≤ 0.101

Inventors: KURA KAZUHIRO, NISHIKAWA KAZUHIRO, OHTSUKI SHUGO, SHIMADA TAKESHI, TOJI KAZUYA, KURA, KAZUHIRO, NISHIKAWA, KAZUHIRO, OHTSUKI, SHUGO, SHIMADA, TAKESHI, TOJI, KAZUYA
Applicants: KURA KAZUHIRO, NISHIKAWA KAZUHIRO, OHTSUKI SHUGO, SHIMADA TAKESHI, SUMITOMO SPEC METALS, TOJI KAZUYA, KURA, KAZUHIRO, NISHIKAWA, KAZUHIRO, OHTSUKI, SHUGO, SHIMADA, TAKESHI, SUMITOMO SPECIAL METALS CO., LTD, TOJI, KAZUYA
Application year: 2001
Main classification: C04B35
IPC codes: C04B35, H01B3, H01P7