GRAIN GROWTH OF ELECTRICAL INTERCONNECTION FOR MICROELECTROMECHANICAL SYSTEMS (MEMS)

Abstract: An isolated connection is formed by growing interconnects from the grain growth of an electrically conductive grain growth material (16) inside an MEMS device (10) after the device (10) is bonded together. The material used for grain growth of electrical contacts is deposited inside a cavity (18) formed between first (12) and second layers (12) of the device (10).

Description: GRAIN GROWTH OF ELECTRICAL INTERCONNECTION FOR MICROELECTROMECHANICAL SYSTEMS (MEMS) BACKGROUND OF THE INVENTION The present invention relates to microelectromechanical systems. More particularly, the present invention relates to providing electrical connections in such systems. Microelectromechanical systems (MEMS) are small devices which provide certain electrical and mechanical functions and are typically batch fabricated. MEMS have found wide spread use in many electrical devices . Example MEMS include acceleration, pressure, flow, displacement, proximity, sensors and valves, pumps, and optical component actuators. One specific use for MEMS transducers is in pressure sensing applications. In aviation or industrial fluid sensor applications, fluids (media) can corrode sensor elements, metal films and connections that are used in manufacturing the sensors. Corrosive process fluids can include gasses in an aerospace or stationary turbine engine, acids, caustics, oils, petrochemicals, foodstuffs and the like. Sensor elements are preferably placed between layers of a sensor body and interconnects are also preferably between the layers and sealed so that corrosive process fluids do not come in contact with the sensor elements and interconnects. In miniature devices that are made using MEMS (microelectromechanical systems) techniques, it is difficult to provide electrical interconnects between layers of the sensor body. This is true for sensors made with MEMS techniques. With MEMS bonding methods, the flat layers of the sensor body need to come together with precise alignment and extremely small gaps, without irregularities or protrusions between the layers. Interconnects that mechanically protrude will contact and hold the flat surface apart during bonding. Defective bonds or leaks can result. Mechanical contact between interconnects needs to be avoided during bonding of the layers . Mechanical contact of the interconnects, is needed, however, in order to complete an electrical circuit at the interconnect. The two MEMS process needs conflict with one another. SUMMARY OF THE INVENTION An isolated connection is formed by growing interconnects from the grain growth of a electrically conductive grain growth material inside a MEMS device after the device is bonded together. The material used for grain growth of electrical contacts is deposited inside a cavity formed between first and second layers of the device. In one aspect, the material deposit is relatively flat at the time of assembly and does not interfere with bonding between peripheral edges of the cavity. After assembly of the first and second layers, the deposit is heated and grows an electrical interconnect forms through grain growth of conductive films or leads that are selectively deposited inside the cavity. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a cross-sectional diagram of a MEMS device in accordance with the invention. FIG. 2 shows a typical industrial environment for a loop powered industrial transmitter; FIG. 3 shows a partial cross-sectional front view of an embodiment of a sensor with a grain growth interconnect; FIG. 4 shows a sectional top view of the sensor shown in FIG. 3 along line 4-4 in FIG. 3 ; FIG 5 shows cross-sectional view of an embodiment of a bond between two recessed layers; FIG. 6 shows a cross-sectional view of an embodiment of a bond between a recessed layer and a flat layer; FIG. 7 shows a cross-sectional view of an embodiment of a bond that includes a spacer layer; FIG. 8 shows a cross-sectional view of an embodiment of a bond between layers formed with different recess depths; FIG. 9 shows an embodiment of a grain growth interconnect in which grain growth material is deposited on two facing interconnect regions; FIG. 10 shows an embodiment of a grain growth interconnect in which grain growth material is deposited on one of two facing interconnect regions and a mesa is aligned with the interconnect regions; FIG. 11 shows an embodiment of a grain growth interconnect in which grain growth material is deposited on two facing interconnect regions and two mesas are aligned with the interconnect regions; FIG. 12 shows an embodiment of a grain growth interconnect in which a supply of growth material is provided in a depression in a layer FIG. 13 shows an embodiment of a bond between layers of similar material without any intervening bonding material; FIG. 14 shows an embodiment of a reaction bond between layers of similar material; FIG. 15 shows an embodiment of a thin film or a sintered solder bond; FIG. 16 shows an embodiment of an anodic bond; FIG. 17 shows a top view of an embodiment of a capacitive pressure sensor; FIG. 18 shows a side view of the capacitive pressure sensor of FIG. 17; FIG. 19 shows a cross-sectional view of the sensor in FIG 17 taken along line 19-19 in FIG. 17; FIG. 20 shows a pressure sensor module for a pressure transmitter; FIG. 21 shows a cross-sectional view of a pressure sensor module for a pressure transmitter. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Figure 1 is a simplified cross-sectional view of a portion of MEMS device 10 in accordance with the present invention. MEMS device 10 includes an upper layer 12 and a lower layer 14. Layers 12 and 14 are electrically coupled together through electrical connection 16 in accordance with the present invention. As explained in more detail herein, electrical connection 16 is formed through a grain growth process to electrically couple layers 12 and 14 together. In general, the present invention can be used to provide a connection between two planar substrates where the connection extends in a direction which is perpendicular (i.e., in a third dimension to the substrates) . For example, the electrical connection 16 can bridge a gap 18 between the two layers 12 and 14. This technique can be used in all types of MEMS devices, for example pressure, acceleration, flow sensors or others. Much of the following description is specifically directed to a pressure sensor which utilizes a connector such as connection 16 shown in Figure 1. However, the invention is not limited to this specific application. Such pressure sensors have many applications such as monitoring of industrial processes or other pressures in other installations. In FIG. 2, a typical environment for an industrial pressure sensor is illustrated at 20. In FIG. 1, process variable transmitters such as flow meter 22 in process fluid line 23, transmitters 24, 26, 36 near tank 28 and integral orifice flow meter 30 in process line 31 are shown electrically connected to control system 32. Control system 32 controls a current to pressure converter 38 which controls control valve 40. Process variable transmitters can be configured to monitor one or more process variables associated with fluids in a process plant such as slurries, liquids, vapors and gasses in chemical, pulp, petroleum, gas, pharmaceutical, food and other, fluid processing plants. The monitored process variables can be pressure, temperature, flow, level, pH, conductivity, turbidity, density, concentration, chemical composition or other properties of fluids. A process variable transmitter includes one or more sensors that can be either internal to the transmitter or external to the transmitter, depending on the installation needs of the process plant. Process variable transmitters generate one or more transmitter outputs that represent the sensed process variable. Transmitter outputs are configured for transmission over long distances to a controller or indicator via communication busses 34. In typical fluid processing plants, a communication buss 34 can be a 4-20 mA current loop that powers the transmitter, or a fieldbus connection, a HART protocol communication or a fiber optic connection to a controller, a control system or a readout. In transmitters powered by a 2 wire loop, power must be kept low to provide intrinsic safety in explosive atmospheres . In FIGS. 3-4, a sensor 300 is illustrated. Sensor 300 is a microminiature or MEMS sensor manufactured using techniques typically adapted from semiconductor manufacturing such as masking, etching, plating and bonding. Sensor 300 comprises a first layer 302 bonded at bond 306 to a second layer 304. Layers 302 and 304 are formed of electrically insulating materials such as sapphire, spinel, various ceramics, glasses, nanoparticle fabricated materials, insulated silicon and other materials that have low hysteresis and are compatible with the desired process fluid or isolator fluid which the outside of sensor 300 will contact. A cavity 308 formed between the layers 302, 304 is isolated from the process fluid or isolator fluid that is outside the sensor. Sensor 300 can be any type of sensor. In one specific example, sensor 300 comprises a pressure sensor which includes capacitive plates formed by electrically conductive layers. A first electrically conductive film 310 is selectively deposited on the first layer 302 in the cavity 308 to define one or more electrical conductor traces for the sensor 300. A second electrically conductive film 312 is deposited on the second layer 304 in the cavity 308 to define one or more further electrical conductor traces for the sensor 300. The first electrically conducting film 310 includes at least a first interconnect region 314. The second electrically conducting film 312 includes at least a second interconnect region 316. The first and second interconnect regions 314, 316 face one another across the cavity 308. The sensor 300 includes a sensor element 318 deposited in the cavity 308 and electrically coupled to the first electrically conductive film 310. Sensor element 318 can take a variety of forms depending on the type of fluid parameter being sensed and may in some cases be formed of the same material as the first electrically conductive film 310, or be an integral part of the first electrically conductive film 310. Sensor element 318 can also include portions that are deposited on the second layer 304 or the second electrically conductive film 312. In sensor 300, an electrically conductive grain growth material 320 is selectively deposited on one or both of the interconnect regions 314, 316. The grain, growth material 320 is deposited in a thin enough layer or layers so that it does not make mechanical contact across the interconnect gap. The layers 302, 304 can thus be bonded together at 306 without mechanical interference from the grain growth material 320. After the bond 306 is complete, the grain growth material 320 is grown upon predetermined conditions to form an electrical interconnect 322 between the first and second interconnect regions 314, 316. The grain growth material is typically tantalum, or an alloy of tantalum, that grows metallic grains when it is heated to a predetermined high temperature after the bonding step. The growth of the metallic grains bridges across the interconnect gap and forms the electrical interconnect 322 as depicted in FIG. 3. FIGS. 5-8 illustrate alternative shapes for the layers 302, 304 which can be used to space the layers apart and form the desired cavity 308 in the sensor 300. In FIG. 5, the first layer 302 and the second layer 304 each include a recess that together form the cavity 308. Layer 302 and 304 are bonded together along a central surface 350. The arrangement shown in FIG. 5 has the advantage that layers 302 and 304 can be constructed identically for some applications. In FIG. 6, the first layer 302 includes a recess, but the second layer 304 is substantially a flat plate. In FIG. 6, layers 302 and 304 are bonded together along a surface 352 that is aligned with one side of the cavity. The arrangement shown in FIG. 6 has the advantage that only one of the two layers requires a recess and that recess forms the cavity 308, which reduces processing steps. In FIG. 7, The sensor includes a spacer layer 303 bonded between the first and second layers 302, 304 along surfaces 354 and 356, respectively. The spacer layer 303 provides the thickness to form at least part of the cavity 308. The arrangement shown in FIG. 7 has the advantage that the thickness of the cavity 308, in other words the spacing between substantially flat layers 302, 304 can be easily adjusted by selecting a spacer layer with the desired thickness. As the flat or low profile layer of grain growth metal is heated, it experiences grain growth, thereby changing shape and growing in a direction transverse to the surface of the contact pad. A grain growth material is selected for the sensor such that the grain growth material grows at a temperature which does not melt or otherwise damage the assembled sensor. The material is preferably a metal, metal alloy, non-metallic electrically conductive material, or other material which provides grain growth including polysilicon. Deposits of tantalum which can include small quantities of other elements are also contemplated, provided the deposit can be grown. The electrically conductive grain growth material can be tantalum or a tantalum alloy. In the case of tantalum, it is believed the growth occurs because tantalum grows grains or crystals which project outwardly from the contact pad. After sufficient growth has occurred, a bridge of tantalum is formed between the contact pads, forming an ohmic interconnection of tantalum between the contact pads. If the cavity spacing is too wide, the gap can be kept small enough to be completed by growth of the electrically conductive grain growth material by the. use of one or more opposite mesas (see FIGS. 10 and 11) extending into the cavity. (Mesa refers to a feature that is raised from a surface and may have a flat top surface.) At least part of the electrically conductive grain growth material is deposited on one layer or mesa. Electrically conductive grain growth material can be deposited on one or both layers, with or without use of mesas, depending on the gap in the cavity. After the layers have been assembled, and the bond between the layers has been at least partially formed, the pressure sensor is heated to effect growth of the electrically conductive grain growth material to form the interconnection. The sensor is cooled, and there is then a solid metal, ohmic contact inside the sensor channel which has been formed after assembly and bonding of the sensor substrates. This delayed electrical interconnection process avoids undesired mechanical contact which could otherwise interfere with the close contact of the substrates when the substrates are directly bonded to one another. In FIG. 8, a recess is formed in each of layers 302, 304, however the recesses have different depths. The layers join along a surface 358 that is offset from the centerline of cavity 308. The arrangement shown in FIG. 8 has the advantage that fine adjustments to the cavity depth can be made by adjusting etching of the recess in layer 302, while the recess in layer 304 can be etched to a standard desired depth. FIGS. 9-12 illustrate example arrangements for providing the needed quantity of grain growth material and for providing the needed spacing for the growth of grains to bridge the gap. In FIG. 9, a first conductive film 370 is deposited on a first layer 372, and a second conductive film 374 is deposited on a second layer 376. First conductive film 370 faces second conductive film 374 across a cavity 375. A first deposit 380 of grain growth material is deposited on first conductive film 370. A second deposit 382 of grain growth material is deposited on the second conductive film 374. When the layers 372, 376 are bonded to one another, the deposits 380, 382 do not mechanically contact one another. After the layers 372, 376 are bonded together, then conditions are applied to cause the grain growth material deposits 380, 382 to grow grains which make mechanical connection and ohmic contact and complete an electrical interconnect 384. In FIG. 10, a first conductive film 390 is deposited on a first layer 392, and a second conductive film 394 is deposited on a second layer 396. First conductive film 390 faces second conductive film 394 across a cavity 398. The first layer 392 includes a mesa 395 that is aligned with the first conductive film 390. The mesa 395 causes the first conductive film 390 to protrude into the cavity 398, reducing the gap between conductive films 390, 394. A deposit 399 of grain growth material is deposited on first conductive film 390. When the layers 392, 396 are bonded to one another, the deposit 399 does not mechanically contact the conductive film 394. After the layers 392, 396 are bonded together, then conditions are applied to cause the grain growth material deposit 399 to grow grains which make mechanical connection and ohmic contact and complete an electrical interconnect between conductive films 390, 394. In FIG. 11, a first conductive film 400 is deposited on a first layer 402, and a second conductive film 404 is deposited on a second layer 406. First conductive film 400 faces second conductive film 404 across a cavity 408. The first layer 402 includes a mesa 405 over part of first conductive film 400. The mesa 405 causes the first interconnect region 405 to protrude into the cavity 408, reducing the gap between conductive films 400, 404. The second layer 406 also includes a mesa 407 over second conductive film 404. A first deposit 412 of grain growth material is deposited on first conductive film 400 . A second deposit 414 of grain growth material is deposited on the second conductive film 404. When the layers 402, 406 are bonded to one another, the deposits 412, 414 do not mechanically contact one another. After the layers 402, 406 are bonded are bonded together, then conditions are applied to cause the grain growth material deposits 412, 414 to grow grains which make mechanical connection and ohmic contact and complete an electrical interconnect between conductive films 400, 404. In FIG. 12, a first conductive film 420 is deposited on a first layer 422, and a second conductive film 424 is deposited on a second layer 426. First conductive film 420 faces second conductive film 424 across a cavity 428. The second conductive film 424 surrounds a depression 430 in the layer 426. A first deposit 432 of grain growth material is deposited in the depression. When the layers 422, 426 are bonded to one another, the deposit 432 does not mechanically contact the first conductive film 420. After the layers 422, 426 are bonded together, then conditions are applied to cause the grain growth material deposit 432 to grow grains which make mechanical connection and ohmic contact and complete an electrical interconnect between conductive films 420, 424. The second conductive film 424 can be open over the depression 430 as shown, or can alternatively be deposited on the walls of the depression 430. An additional volume of grain growth material deposit 432 is supplied in the depression 430 which increases the size of grains that can be grown and the size of the gap that can be bridged using grain growth material. FIGS. 13-16 illustrate various bonds that can be made at 306 between layers 302, 304 in FIG. 3. In FIG. 13, a first layer 440 is bonded to a second layer 442 of the same or similar material along a surface 444, without the use of any bonding material. The bond at surface 444 can be a fusion bond, or it can be a direct or contact bond using mirror polished surfaces. These bonds can be made with materials such as sapphire, spinel, corundum, silica glass, silicon and other brittle insulating materials using known bonding methods . In FIG. 14, a first layer 446 is bonded to a second layer 448 using an intermediate bonding layer 450 to provide a reaction bond. Layer 450 can be of any bonding material, however, the layers 446, 448 can be made of alumina ceramic and the bonding layer 450 can be formed of platinum. This may require the use of an intermediary adhesive layer on layers 446 and 448. In FIG. 15, a first layer 454 is bonded to a second layer 456 using an intermediate bonding layer 458. Layers 454, 456 can be formed of single crystal sapphire and the intermediate bonding layer 458 can be a thin film solder or sintered bond between the layers 454, 456. In FIG. 16, a first layer 464 is bonded to a second layer 466 using an anodic bond 468. Layer 464 is preferably formed of borosilicate glass ("Pyrex") and layer 466 is preferably formed of silicon. The alternatives illustrated in FIGS. 5-16 can be combined with one another as needed to meet the needs of a particular sensor application. The sensing element 318 illustrated schematically in FIG. 3 can be a pressure sensing element . The grown interconnect structure is particularly useful with capacitive pressure sensing elements where there are capacitive electrodes on both facing sides of the cavity. The sensing element 318 can also comprise a temperature sensor element such as a platinum resistance thermometer, an optical sensor element such as a photodiode, a radiation sensor element such as a microwave antenna element or ionization sensor element, a magnetic sensor element such as a Hall effect device or other known sensor elements. FIG. 17-18 shows front and side views, respectively, of an embodiment of a capacitive pressure sensor 480. Internal features of sensor 480 are illustrated in FIG. 17 with dashed and dotted lines. Sensor 480 includes a first layer 482 and a second layer 484 that are bonded together to form an internal cavity 485 (shown in FIG 19) between the layers. A first electrically conducting film 486 is deposited on the first layer 482, and a second electrically conductive film 488 is deposited on the second layer 484. The first and second electrically conducting films 486, 488 have corresponding first and second interconnect regions 490, 492 facing one another across the cavity 485. A first portion 494 of a capacitive pressure sensor element is deposited in the cavity 485 on the first layer 482 and is electrically coupled to the first electrically conductive film 486. The portion 494 of the capacitive pressure sensor element is formed of the same material as the electrically conductive film 486. A second portion 498 of the capacitive pressure sensor element is deposited in the cavity 485 on the second layer 484 and is electrically coupled to the second electrically conductive film 488. The second portion 498 is also formed of the same material as the electrically conductive film 488. The first and second portions 494, 498 of the capacitive pressure sensor element comprise capacitive electrodes or plates that are spaced apart and face one another across the cavity 485. When pressure is applied to the outer surfaces of the sensor 480, one or both of the layers 482, 484 deflect to move the plates and change a spacing or gap between the electrodes or plates, and thus change the electrical capacitance at between the electrodes as a function of pressure. An electrically conductive grain growth material 496 is selectively deposited on at least one of the interconnect regions 490, 492 and grown upon predetermined conditions to form an electrical interconnect between the first and second interconnect regions 490, 492. Electrically conductive film 486 includes bonding pad portions 500, 502 that are externally exposed so that leads or wires can be bonded to them for connecting the sensor to an electrical sensing circuit. The cavity 485 is evacuated and then sealed by glass frit 504 to provide a pressure sensor that is an absolute pressure sensor. Feedthrough leads formed in the layer 486 extend from inside the cavity 485 to the electrical contact pads 500, 502 on an external surface of the capacitive pressure sensor 480. The electrical interconnect at 490, 492, 496 connects the first capacitor electrode 498 to a feedthrough lead and contact pad 500. The sensor 480 has an elongated shape extending from a first end including the first and second capacitive electrodes 494, 498 to a second end including the feedthrough leads . The body of sensor 480 includes a central region between the first and second ends adapted for mounting the sensor through a wall (not illustrated) . Pressurized fluid is applied to the first end, and electrical connections can be made at the second end. The wall separates the pressurized fluid from the electrical connections. FIG. 19 illustrates a cross-sectional view of the capacitive pressure sensor 480 along line 19-19 in FIG. 17. In FIG. 19, the horizontal scale has been distorted to better illustrate the features of the capacitive pressure sensor 480. As can be seen in FIG. 19, the interconnect region 492 is deposited on a mesa 506, reducing the gap to be bridged by grain growth material. In FIG. 20, a pressure sensing module 180 for use in pressure transmitter 36 of shown in FIG. 2. Assembly 180 includes two MEMS sensors 182, 184. Sensors 182, 184 each have a beam integrally formed of alumina around a central channel or cavity having sensing films on facing layers interconnected by a deposit formed substantially of tantalum. In sensors 182, 184, a sensing film is in the channel adjacent the blind end, the sensing film has an electrical parameter that varies with pressure, and electrical leads extending from the channel and out the gap. A seal fills the gap around the leads. An isolation cup 198 has an opening 200 sealed to an outer surface of the beam between the blind end and the opposite, isolated end. Sensors 182 and 184 are shown connected to a measurement circuit board 191 which provides an electrical output to transmitter circuit board 193 which is related to applied pressure . Transmitter circuit 193 can be configured to couple to a two-wire process control loop 195. Example loops 195 include loops in accordance with the HART ® or Fieldbus standards. In some embodiments, circuitry 193 and 191 can be completely powered with power form loop 195. In FIG. 21, a sensing module 210 is shown that includes an isolator diaphragm 212 with a rim 214 sealed to an isolator cup 216. Isolator diaphragm 212 separates process fluid 218 from isolator fluid 220 that is sealed in the space enclosed by the isolator cup 216 and the isolator diaphragm. Sensor 222 is constructed as discussed above and is sealed to an opening 224 in the isolator cup 216. The isolator diaphragm 212 and isolator fluid 220 couple pressure to the sensor 222 while isolating the sensor from the process fluid 218. Isolator cup 216 has sensor 222* passing through sealed opening 224 and isolates electrical connections 226 on the sensor 222 from both the pressurized process fluid 218 and the pressurized isolator fluid 220, which is typically silicone oil. The isolator cup can include a back plate 228 which has a temperature coefficient of expansion closely matched to the temperature coefficient of expansion of the sensor 222. A block of material 230 can be pressed in the isolator cup 216 and the material 230 has a temperature coefficient of expansion which partially compensates for the temperature coefficient of expansion of the isolator fluid 220 to limit undesired movement of isolator diaphragm 212 due to temperature changes. A small gap filled with isolator fluid 220 is provided between block 230 and sensor 222. Although the present invention has been described with reference to preferred embodiments, workers skilled in the art will recognize that changes may be made in form and detail without departing from the scope of the invention. For example, sensor leads may feedthrough multiple channels instead of a single channel. In the case where multiple channels are used, the frit used to seal the gap may be replaced with a conductive solder or braze seal for multiple gaps. Interconnections can also be grown transversely to interconnect leads on facing side surfaces of mesas or rims in the cavity. Anodic bonds can also be used with some materials in place of direct bonds. With both anodic and direct bonding techniques, intermediate bonding materials between layers can be avoided with these methods. The term "contact bond" as used in this application includes both a direct bond and an anodic bond. Electrically conductive grain growth material, can include tantalum and other metals, and also polysilicon, conductive nitride ceramics, conductive metal oxides, suicides and poly II-IV compounds. The term "grain growth" is known in the art and relates to a growth process driven by surface energy of the grain boundaries. Example explanations of grain growth are provided in pages 251-269 of the book entitled "Physical Metallurgy Principles" dated October 26, 1993 and pages 448-461 of the book entitle "Introduction to Ceramics" dated January 9, 1990 which are incorporated herein by reference.

Claims: WHAT IS CLAIMED IS: 1. A microelectromechanical system (MEMS) sensor, comprising: first and second layers that are bonded together and form a cavity between the layers; first and second electrically conducting films deposited on the first and second layers, the first and second electrically conducting films having first and second interconnect regions facing one another across the cavity; a sensor element deposited in the cavity and electrically coupled to the first electrically conductive film; and an electrically conductive grain growth material selectively deposited on at least one of the interconnect regions, and grown upon predetermined conditions to form an electrical interconnect between the first and second interconnect regions . 2. The sensor of claim 1 wherein at least one layer includes a recess that forms at least part of the cavity. 3. The sensor of claim 1 wherein the electrically conductive grain growth material comprises tantalum. 4. The sensor of claim 1 further comprising a spacer layer bonded between the first and second layers and forming at least part of the cavity. 5. The sensor of claim 1 wherein at least one of the first and second layers includes a mesa aligned with one of the first and second interconnect regions. 6. The sensor of claim 1 wherein at least one of the first and second layers includes a depression aligned with one of the first and second interconnect regions, wherein a supply of the grain growth material is deposited in the depression. 7. The sensor of claim 1 wherein the sensor element includes a pressure sensor element . 8. The sensor of claim 7 wherein the pressure sensor comprises a capacitive pressure sensor element. 9. The sensor of claim 8 including the capacitive pressure sensor element being formed of the same material as the electrically conductive film. 10. The sensor of claim 9 wherein the capacitive pressure sensor element comprises a first capacitor electrode deposited on the first layer and a second capacitor electrode deposited on the second layer, the first and second capacitor electrodes being spaced apart across the cavity from one another and adapted to sense deflection between the first and second layers . 11. The sensor of claim 10 wherein one of the first and second electrically conductive films includes feedthrough leads that extends from inside the cavity- to electrical contact pads on an external surface of the capacitive pressure sensor. 12. The sensor of claim 11 wherein the electrical interconnect connects the first capacitor electrode to a feedthrough lead on the second layer. 13. A pressure transmitter, comprising a MEMS sensor according to claim 1. 14. The pressure transmitter of claim 13 further comprising a process fluid isolator coupling pressure to the MEMS sensor. 15. The sensor of claim 1 wherein the grown growth material includes a metal. 16. A method of manufacturing a sensor, comprising: forming first and second layers of a sensing body, wherein at least one of the first and second layers includes a recess portion; depositing an electrically conducting film on at least the first layer; depositing a lead on the second layer; depositing a electrically conductive grain growth material on at least one of the lead or the electrically conducting film; bonding the first and second layers together, wherein a portion of the lead is aligned with and spaced apart from a portion of the electrically conducting film at the deposit of electrically conductive grain growth material, and heating the electrically conductive grain growth material to grow an interconnection in the space between the electrically conducting film and the lead. 17. The method of claim 16 further comprising forming: a mesa in at least one of the first and second layers, the mesa aligning with the deposit of electrically conductive grain growth material. 18. A microelectromechanical system (MEMS), comprising: a body assembled from at least first and second layers joined together, the body forming a cavity between facing surfaces of the first and second layers; a first electrical conductor deposited on one of the facing surfaces; a second electrical conductor deposited on the other of the facing surfaces; and an electrically conductive grain growth material deposit placed on at least one of the conductors that upon predetermined condition grows grains to form an interconnection between the conductors . 19. The device of claim 18 wherein the device is heated to effect growth of the electrically conductive grain growth material to form the interconnection.

Inventors: LUTZ MARK A, ROMO MARK G, RUD STANLEY E JR, SITTLER FRED C, TOY ADRIAN C, LUTZ, MARK, A., ROMO, MARK, G., RUD, STANLEY, E., JR., SITTLER, FRED, C., TOY, ADRIAN, C.
Applicants: ROSEMOUNT INC, ROSEMOUNT INC.
Application year: 2001
Main classification: G01L9
IPC codes: B81B3, B81B7, B81C5, G01L9, H01L29