HIGH TEMPERATURE PIEZOELECTRIC SENSOR

Abstract: The present invention provides a sensor that can be operated at high temperatures. The sensor comprises a first electrode, a second electrode, and an aluminum nitride film which lies between the first and second electrode. The sensor can be used to measure pressure, acceleration, or force at high temperatures.

Description: HIGH TEMPERATURE PIEZOELECTRIC SENSOR The present invention relates to a high temperature piezoelectric sensor, and more particularly to a high temperature piezoelectric sensor utilizing aluminum nitride films which can be used to sense force, acceleration and pressure. In order to generate a useful output signal, some sensors rely on the piezoelectric effect. When piezoelectric elements are strained by an external force, displaced electrical charge accumulates on opposing surfaces. This electrical charge can be used to measure the amount of pressure, force, and acceleration of an object. Piezoelectric sensors have been developed using materials such as quartz. However, the piezoelectric materials have not been suitable for use at high temperatures. The maximum temperature for such materials is their Curie point, or (for artificially poled materials) the poling temperature. Existing high temperature piezoelectric sensors based on quartz are useful up to only around 700° C. Thus, there is a need in the art for a piezoelectric sensor that is suitable for use at high temperatures Aluminum nitride has also been used in transducers. See, for example, U.S. Patent No. 5,886,456, which is hereby incorporated by reference, and which utilizes aluminum nitride in an ultrasonic transducer which generates and detects ultrasonic sounds. However, heretofore, aluminum nitride has not been utilized in sensors for use at high temperatures to sense force, acceleration or pressure. Accordingly, there is a need for a sensor with an extended temperature range that can be used to measure force, acceleration or pressure. This need is met by the present invention by providing a sensor utilizing piezoelectric aluminum nitride films that can be operated at high temperatures without damage. The sensor can be operated at temperatures exceeding 1100° C. The sensor can be used to measure pressure in processes such as die-casting, extrusion, and engine monitoring. The sensor can also be used to measure force or acceleration. Accordingly, it is an object of the present invention to provide a sensor comprising a first electrode, a second electrode, and an aluminum nitride film which lies between the first and second electrode. The sensor can be used to measure pressure, acceleration, or force at high temperatures. According to one embodiment of the present invention provided is a high temperature piezoelectric sensor device comprising first and second electrodes and a piezoelectric film between the first and second electrodes, wherein the piezoelectric sensor is operable up to a temperature of about 1200° C. The piezoelectric film is preferably aluminum nitride. The first electrode is a substrate selected from the group consisting of carbide, titanium, silicon carbide, carbon, similar metals, and semiconductive ceramics. The sensor is adapted to provide a measurement selected from the group consisting of force, pressure, and acceleration. According to another embodiment of the present invention provided is a high temperature piezoelectric sensor suitable for use in a control circuit comprising a sensor, a charge amplifier that is electronically coupled to the sensor, and a microelectronic device that is electronically coupled to the charge amplifier. The sensor comprises a first electrode comprising a first side and a second side, a piezoelectric film comprising a first side and a second side. The first side is supported by the second side of the first electrode. The second electrode comprises a first side and a second side, wherein the first side of the second electrode supports the second side of the film. The control circuit provides a measurement selected from the groups consisting of pressure, force, and acceleration. These and other features and objects of the present invention will be apparent in light of the description of the invention embodied herein. The following detailed description of the preferred embodiments of the present invention can be best understood when read in conjunction with the following drawings, where like structure is indicated with like reference numerals and in which: Fig 1 is a diagrammatic cross-section view of a piezoelectric sensor according to the present invention. Fig. 2 is a diagrammatic view of a control circuit comprising a piezoelectric sensor according to the present invention. Fig. 3 is a diagrammatic view of a control circuit comprising a piezoelectric sensor according to the present invention and utilized to monitor an engine. Fig. 4 is a diagrammatic cross-section view of a piezoelectric sensor according to the present invention adapted to measure force. Fig. 5 is a diagrammatic cross-section view of a piezoelectric sensor according to the present invention adapted to measure acceleration. Fig. 6 is a diagrammatic cross-section view of a piezoelectric sensor according to the present invention adapted to measure forging pressure. Fig. 7 is a diagrammatic cross-section view of a piezoelectric sensor according to the present invention adapted to measure isolated ground pressure. Fig. 8 is a graph showing signal response over time during an exemplary forging run employing a pair of piezoelectric sensors according to the present invention to measure center and edge pressure realized by a forged item. The present invention is best described by referring to the figures. Referring initially to Fig. 1 , a high temperature piezoelectric sensor 2 is provided. The sensor 2 includes a first electrode 4, a piezoelectric film 10, and a second electrode 12. The first electrode 4 comprises a first side 6 and a second side 8. The second electrode 12 comprises a first side 11 and a second side 13. The piezoelectric film 10 lies between the first side 11 of the second electrode 12 and the second side 8 of the first electrode 4. The first electrode 4 may be a single material or it may be composed of a nonconductive material with a conductive coating. The piezoelectric film 10 is the active element of the sensor 2. The piezoelectric film 10 is made of ceramic, and has a layer thickness from about 0.02 mm to about 0.2 mm. Preferably, the piezoelectric film 10 is aluminum nitride (A1N). Other crystalline or polycrystalline ceramics such as, for example and not limited to, boron nitride (BN) may be used for the second electrode 12. In one embodiment using an aluminum nitride as the piezoelectric film 10, the sensor 2 can operate and withstand pressures on the order of 100,000 psi and temperatures of about 1200° C, and remain intact until substrate degradation occurs near 1400° C with no known aluminum nitride Curie point. In forming the sensor 2, the piezoelectric film 10 is deposited onto a side surface of one of the electrodes 4 or 12 through a chemical vapor deposition process. The exposed side of the film 10 is polished and the remaining electrode 4 or 12 is then applied directly thereon, or formed by a conductive part contacting the surface of the film 10 to complete the sensor 2. For operation of the sensor 2, a force is applied perpendicular to the flat face of the film 10. The force may be applied directly by a solid member (direct force sensor, indirect pressure sensor); by a pressurized gas or liquid (direct pressure sensor); by the inertial reaction of a mass (accelerometer); or by the transmission of stress waves into the sensing film (ultrasonic transducer in receiver mode, microphone, acoustic emission sensor). The application offeree to the film 10 will result in the appearance of an electrical charge at the boundaries of the film 10. Charges then appear at the first electrode 4 and second electrode 12. The charges are then conducted down a first wire 14 and a second wire 16. In Fig. 1, the first wire 14 is coupled to the first electrode 4 while the second wire 16 is coupled to the second electrode 12. Fig. 2 illustrates a control circuit 1 embodiment of the invention using the high temperature piezoelectric sensor 2. The control circuit 1 comprises the sensor 2 as described above electrically coupled to a charge amplifier 3 which is electrically coupled to a microelectronic device 5. In using the control circuit 1, the voltage potential across the wires 14 and 16 of the sensor 2 is amplified by the charge amplifier 3 into a voltage signal useable by the microelectronic device 5. The voltage signal is then converted by the microelectronic device to a force, pressure, or acceleration reading due to the direct proportionality between the voltage and the force, pressure, or acceleration. As illustrated by Fig. 3, the sensor 2 of the control circuit 1 may be coupled to or form part of a structure 7, such as a combustion chamber wall of a heat engine (i.e., Otto, diesel, Brayton, Stirling and Rankine cycles), part of a fuselage, and the like. Fig. 4 illustrates an embodiment according to the present invention adapted to measure pressure. For pressure measurement it is required that the pressure being measured be applied to an area, which can convert it to a force that compresses the piezoelectric film. The pressure sensor 102 is shown in this exemplary embodiment coupled to a pressure body 24, such as for example, a portion of a forging die. The second electrode 12 is either coupled or formed as part of the pressure body 24, which is grounded by the second wire 16. An insulative plate 20 is coupled to the first side 6 of the first electrode 4. The plate 20 is preferably a ceramic material for improved electrical insulation at elevated temperature and mechanical stiffness, however, for other embodiments, other insulating materials may be used. On the opposed side of the plate 20 from the first electrode 4 rests a plug 22, which is preferably steel. The plug 22 on the opposed side from the plate 20, forms part of the engagable surface of the pressure body 24. On the remaining sides, the plug 22 is surrounded by the pressure body 24 and movably in a cavity formed thereof. The first wire 14 extends from the first electrode through a drilled hole 21 to connect the piezoelectric sensor 2 to a connector that hold and isolates the insulated first wire 14. The components are aligned such that the force being measured is transmitted to the film 10 as a compressive load. Tensile forces may be sensed by applying a compressive mean load to the sensor such that a tensile load will be sensed as a lessening of the compressive stress applied to the film 10. Fig. 5 illustrates an embodiment according to the present invention adapted to measure acceleration. For acceleration, a seismic mass 32 is used to convert the acceleration to a force. Additionally, the use of a compressive preload 33 is especially important for accelerometer applications, where accelerations are generally in both the positive and negative directions. The first electrode 6 of the accelerometer 104 is connected to a connector 30 by the first wire 14 which acts as a signal wire. The connector 30 is preferably a coaxial connector that includes, as known, a ground portion insulated from a signal portion. The preferred insulation is ceramic. An insulative plate 20 is attached to the first side 6 of the first electrode 4 and coupled to the seismic mass 32. In one embodiment, the plate 20 is a ceramic washer and the preload mechanism 33 is a stainless steel bolt, however, for other embodiments, other similarly suitable materials may be used. The preload mechanism 33 is vertically inserted through first electrode 4 and the piezoelectric film 10, and loaded by coupling to the second electrode 12, here configured as a protective housing, which can be mounted to any structural member. Fig. 6 illustrates an embodiment according to the present invention adapted to measure force. The force sensor 106 is connected to the signal portion of the connector 30 by the first wire 14 which is coupled to the first electrode 4. Since the first wire 14 is a signal wire it is preferably ceramic coated for insulation. The second electrode 12 acts as a pressure plate that acts against a top pressure plate 42. The second electrode 12 is coupled to the insulator 46 that protrude substantially perpendicular from the second electrode 12. The insulator 46 is situated so that it rests perpendicularly against the first electrode 4 and the piezoelectric film 10. The top pressure plate 42 is coupled to the top portion of the insulating plate 20 such that it expands over the insulating plate 20. This expansion allows the top pressure plate 42 to be also coupled to the insulator 46. As illustrated, a portion 42a of the pressure plate 42 is slidably mounted between the insulator 46 and second electrode 12. Thus, the top pressure plate 42 and the second electrode 12 enclose therebetween insulators 20 and 46, first electrode 4, and piezoelectric film 10. The second wire 16 is a jumper wire connecting the second electrode 12 to the top pressure plate 42. Fig. 7 illustrates an embodiment according to the present invention adapted to measure isolated ground pressure. In this exemplary embodiment, the pressure sensor 108 comprises a housing 51 surrounding and isolating various sensor components. The housing 51 is preferably cylindrical in shape, and on an exterior surface 54 may include threads such that it may be threaded into a conventional pressure port. In particular, the housing 51 at a first end is coupled to atop portion of a first insulative plate 20a, and at the opposed end, to a second insulative plate 20b by fastening device 52, such as a plate retaining screw. The pressure sensor 108 further comprises a probe 33 having an interior portion 33a and an exterior portion 33b, which is preferably steel. The housing 51 encloses the interior probe portion 33a, wires 14, 16, and a third insulative plate 20c. In this exemplary embodiment, the insulative plates 20a, 20b, 20c are ceramic washers. The housing 51 is preferably ceramic coated on the inside to act as an insulative shield for the first wire 14, second wire 16, and interior probe portion 33a. As illustrated, the probe 33 from the exterior probe portion 33b extends through the second electrode 12, the piezoelectric film 10, the first electrode 4, and the first and third insulative plates 20a and 20c, respectively. The interior probe portion 33a is coupled to the ground portion of connector 30 by the second wire 16, wherein voltage is sensed at the first electrode 4 via wire 14 couple to the signal portion of connector 30. Potential uses for the sensor of the present invention include monitoring deformation in hot isostatic pressing (HIP), use as part of a high temperature load cell, as a room temperature, high frequency ultrasonic NDE transducer, detection of inclusions in molten metals, and as a direct charge mode force sensor. The sensor may also be used to measure force, acceleration or pressure in processes such as die casting, extrusion, and engine monitoring. The sensor can replace existing sensors in high temperature applications that require active cooling. This includes the monitoring of pressures in ballistics, internal combustion engines, high temperature fluids, injection molding, extrusion and die casting. The sensor may also be used for force monitoring and acceleration monitoring at high temperatures. Example 1 : A sensor utilizing an aluminum nitride film was fabricated and placed in an MTS load frame which could apply a compressive load. At room temperature, using a commercial charge amplifier, quasistatic load measurement capabilities were demonstrated. The temperature was increased to above 300 C, and an unexplained effect forced the replacement of the commercial charge amplifier with a signal conditioning circuit consisting of a high impedance voltage follower, a high pass filter, and a gain stage. With these electronics, vibrations at frequencies ranging from 10 Hz to above 1000 Hz were observed. Shock signals were observable on an oscilloscope connected directly to the sensor with no signal conditioning. With slight modifications, the sensor operated above 600 C. The sensitivity of the sensor is within one order of magnitude of commercially available devices at room temperature and at 100 C. The aluminum nitride films used in the piezoelectric sensors of the present invention may function as replacements for currently used piezoelectric materials. They can be used with inexpensive, commercially available signal conditioning equipment. For quasistatic or low frequency use, special care will have to be taken with the electrical insulation of the high impedance portion of the circuit. Example 2: The lower die of a forging press was instrumented with two sensors in the manner of Fig. 4. A cylindrical workpiece of 6061 aluminum at 950° C was placed between the upper and lower dies. The dies were closed together, forging the workpiece into a flat ring with a center web. The signals received from the sensors in the die during the forging run are illustrated along with the press load in the Table provided as Fig. 8. Fig. 8 shows the initial force of the workpiece at the center sensor as the upper die touched the workpiece at approximately 5.2 seconds. Shortly thereafter, hydraulic pressure was applied by the press and the workpiece flattened outward until about 7 seconds, when it was restrained by the outer wall of the die. At this time, the workpiece touched the second sensor, which read a force, and the force registered at the center sensor increased further in order to continue to fill the die, as confirmed by the corresponding increase in press load. At the end of the stroke of the press, approximately 7.6 seconds, both sensors recorded a maximum force. At approximately 7.9 seconds, both sensors recorded a load transient as the weight of the upper die began to be lifted from the workpiece. The sensors indicated when material reached them. The sensors also indicated increases and decreases in the workpiece pressure. The outer sensor showed significantly less pressure, it is believed that this is due to the die not filling in the corners of the ring. This indicates significantly less pressure. The sensors were not damaged in the test. Having described the invention in detail and by reference to preferred embodiments thereof, it will be apparent that modifications and variations are possible without departing from the scope of the invention defined in the appended claims. More specifically, although some aspects of the present invention are identified herein as preferred or particularly advantageous, it is contemplated that the present invention is not necessarily limited to these preferred aspects of the invention.

Claims: CLAIMS 1. A high temperature piezoelectric sensor device comprising: first and second electrodes; and a piezoelectric film provide between said first and second electrodes, wherein said piezoelectric sensor is operable up to a temperature of about 1200°C. 2. A device as claimed in claim 1 wherein said piezoelectric film is aluminum nitride. 3. A device as claimed in claim 1 further comprising an insulator having first and second surfaces, and a plug engaging said first surface of said insulator, wherein said second electrode forms a cavity and said plug is accommodated in said cavity, and said first electrode engages said second surface of said insulator. 4. A device as claimed in claim 1 further comprising a first insulator having first and second surfaces, a pressure plate engaging at least said first surface of said first insulator, wherein said second surface of said first insulator engages said first electrode, and said pressure being coupled to said second electrode. 5. A device as claimed in claim 4 further comprising a second insulator extending from said second electrode to perpendicularly fit there between said first electrode and said piezoelectric film. 6. A device as claimed in claim 5 wherein said pressure plate expands over said first insulator and includes a pressure plate portion that is slidably mounted between said second insulator and said second electrode. 7. A device as claimed in claim 1 wherein said first electrode is a substrate selected from the group consisting of carbide, and titanium. 8. A device as claimed in claim 1 further comprising at least one insulator plate having first and second sides, said first side couple to a second side of said first electrode, and a mass member coupled to said second side of said insulator plate, wherein said insulator plate, said first electrode and said piezoelectric film form cavity, and said mass member being couple to said second electrode through said cavity. 9. A device as claimed in claim 8 wherein said second electrode forms a protective housing for said insulator plate, said first electrode, said piezoelectric film and said mass member. 10. A device as claimed in claim 9 further comprising a connector insulatively couple to second electrode and electrically couple to said first electrode. 11. A device as claimed in claim 8 wherein said at least one insulator plate is first and second insulator plates, and said sensor further comprises a housing coupled between said first and second insulator plates. 12. A device as claimed in claim 11 wherein said mass member is a probe having an exterior portion and interior portion, and said housing encloses said interior portion of said probe and said second insulator plate member. 13. A device as claimed in claim 12 further comprising a connector insulatively couple to said housing, wherein said probe is grounded to said connector and said first electrode is electrically couple to said connector through said first and second insulator plates. 14. A device as claimed in claim 1 wherein said sensor is adapted to provide a measurement selected from the group consisting offeree, pressure, and acceleration. 15. A device as claimed in claim 3 wherein said second electrode is a forging die body. 16. A high temperature piezoelectric sensor suitable for use in a control circuit comprising: a sensor; a charge amplifier that is electronically coupled to said sensor; and a microelectronic device that is electronically coupled to said charge amplifier; wherein said sensor comprises: a first electrode comprising a first side and a second side; a piezoelectric film comprising a first side and a second side, wherein said first side is supported by said second side of said first electrode; and a second electrode comprising a first side and a second side, wherein said first side of said second electrode supports said second side of said film. 17. A sensor suitable for use in a control circuit as claimed in claim 16, wherein said control circuit provides a measurement selected from the group consisting of pressure, force, and acceleration. 18. A high temperature piezoelectric sensor suited for measuring force comprising: a first electrode having a first side and a second side; a piezoelectric aluminum nitride film having a first side and a second side, wherein said first side is supported by said second side of said first electrode; a second electrode having a first side and a second side, wherein said second side of said second electrode is coupled to said second side of said aluminum nitride film; an insulating plate that is coupled to said first side of said second electrode; a first insulator; a second insulator; wherein said second electrode is coupled to said first insulator and said second insulator that protrudes from said second electrode in a manner that cause said first insulator and said second insulator to fit perpendicularly against said first electrode and said piezoelectric aluminum nitride film; a top pressure plate coupled to said first side of said insulating plate and expands over said insulating plate that allows said top pressure plate to be coupled to said first insulator and said second insulator; a connector; a first wire connecting said first electrode to said connector; a jumper wire connecting said second electrode to said pressure plate; and wherein said second electrode is capable of being coupled to said pressure plate thus enclosing said insulating plate, said first insulator, said second insulator, said first electrode, and said piezoelectric aluminum film. 19. A high temperature piezoelectric sensor suited for measuring acceleration comprising: a first electrode having a first side and a second side; a piezoelectric aluminum nitride film having a first side and a second side, wherein said first side is supported by said second side of said first electrode; a second electrode having a first side and a second side, wherein said second side of said second electrode is coupled to said second side of said aluminum nitride film; a connector; a first wire connecting said first electrode to said connector; a plate having a first side and a second side, wherein said second side of said plate is coupled to said first side of said first electrode; a steel member coupled to said first side of said ceramic plate, wherein said steel member is vertically inserted into said sensor. 20. A high temperature piezoelectric sensor capable of being connected to a forging die body comprising: a first electrode having a first side and a second side; a piezoelectric aluminum nitride film having a first side and a second side, wherein said first side is supported by said second side of said first electrode; a second electrode having a first side and a second side, wherein said second side of said second electrode is coupled to said second side of said aluminum nitride film; a first wire connecting said first electrode to said connector; a plate having a first side and a second side, wherein said second side of said plate is coupled to said first side of said first electrode; a steel member coupled to said first side of said ceramic plate, a second wire; and a die body coupled to second wire. 21. A high temperature piezoelectric sensor capable of measuring isolated ground pressure comprising: a first electrode having a first side and a second side; a piezoelectric aluminum nitride film having a first side and a second side, wherein said first side is supported by said second side of said first electrode; a second electrode having a first side and a second side, wherein said second side of said second electrode is coupled to said second side of said aluminum nitride film; a first wire connecting said first electrode to said connector; a plate having a first side and a second side, wherein said second side of said plate is coupled to said first side of said first electrode; a housing coupled to said second side of said plate, wherein said housing comprises a first side and a second side that encloses a portion of said steel member that extends through said sensor and said plate, said first wire, said second wire, and a steel body, said second side of said housing is coupled to a connector, said second wire connect said connector with said steel body; and a steel member having a first end and a second end, wherein said first end of said steel member is surrounded by said sensor and said plate and said second end of said steel member is surrounded by said steel body.

Inventors: DUTTON ROLLIE E, SEBASTIAN JAMES R, STUBBS DAVID A, DUTTON, ROLLIE, E., SEBASTIAN, JAMES, R., STUBBS, DAVID, A.
Applicants: UNIV DAYTON, UNIVERSITY OF DAYTON
Application year: 2001
Main classification: G01L
IPC codes: G01L1, G01L23, G01P15