VOLTAGE CONTROLLED OSCILLATOR

Abstract: A Voltage Controlled Oscillator for wide range tuning bandwidth comprises a transistor (T1) with a voltage tunable resonant circuit (D1, D2, L1) connected to an emitter of the transistor (T1) and inductive elements (L3, L4) connected to the collector of the transistor (T1). The collector is fed back to the base of the transistor (T1). The feedback path comprises the series connection of two capacitors (C1, C2) and a resistor (R1). A circuit node (N3) between the capacitors (C1, C2) is inductively coupled to the base of the transistor (T1).

Description: Voltage Controlled Oscillator The invention refers to a Voltage Controlled Oscillator with a transistor and a frequency variable resonant circuit connected to said transistor. In many RF and microwave systems receivers and transmitters are required which can be tuned over a wide frequency range. The cost and complexity of the circuitry can be considerably reduced when a single Voltage Controlled Oscillator (VCO) or fewer VCOs are used. For example, for microwave sensors employing wide band continuous phase swept frequency modula- tion, it is essential that a single oscillator is used. Also, VCOs find wide application in practically every type of RF and microwave systems, a particularly important use for wideband VCOs is in microwave sensors which employ linear frequency sweeping. This is commonly referred to as Frequency Modulated Continuous Wave, or FM-CW modulation. In order for the modulation to work the sweep must be phase continuous and the most efficient and effective way of generating such a sweep is to apply a swept drive voltage to the tuning terminal of the VCO. The range resolution of such sensors is pro- portional to the bandwidth of the sweep. So in many cases a very wide sweep bandwidth is required. The potential tuning range is often not achieved in practice, especially when the ratio of the upper and the lower fre- quency is equal or above 2:1 (so called "octave" tuning). This is due to the fact that the gain of the transistor drops with increasing frequency. So the circuit stops oscillating over the upper part of the resonator tuning range . The achievable frequency range could be extended by increasing the gain of the transistor, e.g. by increasing the collector current. But, this often causes excess gain at lower frequencies leading to instability and parasitic oscillations. A common example of this is "subharmonic pumping", where a large signal is generated at half the expected resonant frequency. The objective of the invention is to provide a voltage controlled oscillator which permits a wide tuning bandwidth to be achieved with simple circuitry. This objective is solved by a Voltage Controlled Oscillator, comprising: a transistor with a controlled path having a first and a second terminal and a control terminal; a frequency variable resonant circuit with an input terminal for a tuning voltage, the resonant circuit being connected between said first terminal of said controlled path of said transistor and a terminal for a reference potential; a series circuit comprising a first and a second inductive element connected between said second terminal of said controlled path of said transistor and said terminal for said reference po- tential; a frequency dependent feedback path coupled to a circuit node between said first and said second inductive elements and said control terminal of said transistor; said feedback path comprising a series circuit of a first and a second capacitive element and a resistor connected to said circuit node between said first and said second inductive elements and to said terminal for said reference potential and comprising a third inductive element connected to a circuit node between said capacitive elements and to said control terminal of said transistor. The feedback path of the oscillator comprises a voltage divider with respect to the AC signal. This forms a potentiometer chain supplying the output signal of the VCO to the transistor base. The amount of feedback varies with the fre- quency. The feedback increases with frequency so that the gain increases at higher frequencies. As an advantage, sub- harmonic pumping is avoided. The amount of feedback can be adjusted according to a suitable choice of the values for the elements in the feedback path. Overall this leads to a wide tuning range for the oscillator. The feedback path comprises a first and a second capacitor and a resistor connected in serial fashion. The circuit node between the capacitors is connected to the control input of the transistor of the oscillator via an inductive element. The transistor can be of either type, e.g. a NPN bipolar transistor, a PNP bipolar transistor, or a field effect transistor. The resonant element connected to the emitter of the bipolar transistor or the source of the field effect transistor has a tuning terminal for the reception of a control voltage. The voltage varies the characteristics of the resonant circuit. The resonant circuit comprises a series connection of two varactor diodes with an inductive element connected in parallel. The tuning voltage is applied to the connection node be- tween the varactors. As an advantage the invention provides a Voltage Controlled Oscillator which can be tuned over a wide frequency range without subharmonic pumping. Only one Voltage Controlled Os- cillator is required to cover the tuning range for microwave sensors which employ linear frequency sweeping. The circuit employs relatively few elements and is relatively simple. In the following the invention is described with reference to a preferred embodiment. The circuit diagram of the wideband Voltage Controlled Oscillator (VCO) is depicted in the figure. The figure shows the AC components only. Any DC biasing components have been omitted for clarity. DC biasing of a resonant circuit is known to a person skilled in the art. The DC biasing configuration will depend on the available power supplies . The circuit shown in the figure comprises a NPN bipolar transistor Tl, which is the gain or amplifying element. Other types of transistors as are PNP bipolar transistors or field effect transistors could also be employed. The collector- emitter-path or drain-source-path is the controlled path of the transistor. The base terminal or gate terminal of the transistor is the control terminal. The resonator of the oscillator is implemented by a parallel resonant circuit which is formed by an inductor Ll and two varactor diodes Dl and D2. The diodes are connected serially with their cathodes being connected to a common circuit node Nl . The inductor Ll is connected in parallel to the series connection of the diodes Dl, D2. One end of the resonant circuit is connected to the emitter terminal of the transistor Tl. The other end of the resonant circuit is connected to a terminal GND for a reference potential. The reference potential is ground. Frequency tuning is achieved by a bias tuning voltage to an input terminal T which is connected to the common circuit node Nl between the diodes Dl, D2, via a suitable resistor, which pro- vides RF isolation between the tuning voltage and the resonant circuit . Depending on the tuning voltage the capacity of the varactor diodes changes , thereby varying the resonant characteristics of the frequency variable resonant circuit. Two inductors L3 and L4 connected in serial fashion form the RF load of the oscillator. The series connection of the inductors L3, L4 is connected between the collector of the transistor Tl and the ground terminal. The output of the oscillator circuit is connected to the collector of the tran- sistor Tl via a blocking capacitance C3. A frequency dependent feedback circuit is applied to the oscillator. The frequency dependent feedback circuit comprises the series connection of two capacitors Cl, C2 and a resistor Rl. Capacitor Cl is connected to the circuit node N2 between the inductors L3 , L4. One terminal of resistor Rl is connected to capacitor C2, the other end of resistor Rl is connected to ground terminal. The common circuit node N3 between capacitors Cl, C2 is connected to the base terminal of transistor Tl via an inductor L2. The inductor L2 couples the base of the transistor induc- tively to ground via capacitor C2 and resistor Rl . The equivalent circuit of inductor L2 and transistor Tl forms an effective negative resistance which is connected in parallel with the resonator Ll, Dl, D2. When the value of the inductor L2 is chosen so that the negative resistance value at least equals the resistive loses in the resonator, then oscillation begins . The feedback path comprising Cl, C2, Rl forms a potentiometer chain supplying the output signal of the oscillator back to the base terminal of the transistor Tl through inductor L2. The potentiometer is driven by inductor L4. The inductor L4 provides isolation between the feedback path and any output load connected to the output terminal 0. By suitable choice of the parameters Cl, Rl, C2 in the feedback path the amount of feedback can be adjusted suitably to increase with frequency. As a result, increased gain is provided to the base terminal of transistor Tl at higher frequencies so that any risk of subhar onic pumping is avoided. For example, the magnitude of the voltage attenuation provided by the potentiome- ter chain is C1/(C1 + C2) at relatively low frequencies, i.e. less than 1, and 1 at relatively high frequencies. The tuning bandwidth is determined by the tuning capacitance range of the varactor diodes. Commercially available hyper abrupt diodes have a sufficient capacitance range to permit a tuning of the resonator circuit with the upper and lower frequencies of the tuning range forming a ratio 2:1. This is called octave tuning. In a system using wideband VCOs the following conflicting design constraints are present: First, due to limitations in the tuning diodes, the transistor gain, the circuit losses etc., the achievable tuning bandwidth is limited to a fraction of the centre frequency. The effective practical limit is generally taken to be octave tuning, but many VCO designs cannot achieve a tuning range as wide as this octave tuning. Thus, as the required tuning bandwidth is increased, the designed centre frequency of the VCO must also be increased. Second, for reasons of performance and component cost as well as availablility, most signal generation and manipulation functions are performed at a convenient Intermediate Frequency. Thus, as the VCO centre frequency is increased the system Intermediate Frequency must also be increased or an additional Intermediate Frequency must be introduced so that the system design becomes more difficult and expensive. Third, as the VCO centre frequency is increased, an increase in the oscillator's phase noise is experienced. This is due to increased circuit losses, which lower the Quality Factor of the resonator in the VCO. Increased phase noise leads to a decrease in performance of the sensor. The VCO circuit according to the invention permits VCOs with a relatively wide possible tuning bandwidth using simple circuitry design. Overall, this leads to improved system performance at lower cost .

Claims: Claims 1. Voltage Controlled Oscillator, comprising: - a transistor (Tl) with a controlled path having a first and a second terminal and a control terminal; - a frequency variable resonant circuit (Dl, D2 , Ll) with an input terminal (T) for a tuning voltage, the resonant circuit (Dl, D2 , Ll) being connected between said first terminal of said controlled path of said transistor (Tl) and a terminal (GND) for a reference potential; - a series circuit comprising a first and a second inductive element (L3 , L4) connected between said second terminal of said controlled path of said transistor (Tl) and said terminal (GND) for said reference potential; - a frequency dependent feedback path (Cl, C2 , Rl) coupled to a circuit node (N2) between said first and said second inductive elements (L3, L4) and said control terminal of said transistor (Tl) ; - said feedback path comprising a series circuit of a first (Cl) and a second (C2) capacitive element and a resistor (Rl) connected to said circuit node (N2) between said first and said second inductive elements (L3, L4) and to said terminal (GND) for said reference potential and comprising a third inductive element (L4) connected to a circuit node (N3) between said capacitive elements (Cl, C2) and to said control terminal of said transistor (Tl) . 2. Voltage Controlled Oscillator according to claim 1, c h a r a c t e r i z e d by an output terminal (0) coupled via a blocking capacitor (C3) to said second terminal of said controlled path of said transistor (Tl) . 3. Voltage Controlled Oscillator according to claim 2, c h a r a c t e r i z e d i n t h a t said first capacitive element (Cl) of said feedback path is connected to said circuit node (N2) between said first and said second inductive elements (L3, L4) and in that said second capacitive element (C2) is connected to said terminal for said reference potential via said resistor (Rl) . 4. Voltage Controlled Oscillator according to any of claims 1 to 3, c h a r a c t e r i z e d i n t h a t said resonant circuit comprises a first and a second variable capacitance (Dl, D2) connected in series and an inductive element (Ll) connected in parallel to series connection of said variable capacitances (Dl, D2) and in that said input terminal (T) of said resonant circuit is coupled to a circuit node (Nl) between said variable capacitances (Dl, D2) . 5. Voltage Controlled Oscillator according to claim 4, c h a r a c t e r i z e d i n t h a t said variable capacitances (Dl, D2) are varactor diodes, the cathodes of which are connected together at said circuit node (Nl) of said resonant circuit. 6. Voltage Controlled Oscillator according to any of claims 1 to 5, c h a r a c t e r i z e d i n t h a t said transistor (Tl) is a NPN bipolar transistor or a PNP bi- polar transistor having an emitter connected to said resonant circuit (Dl, D2, Ll) and having a collector connected to said first inductive element (L4) . 7. Voltage Controlled Oscillator according to any of claims 1 to 5 c h a r a c t e r i z e d i n t h a t said transistor (Tl) is a field effect transistor having a drain-source-path connected to said resonant circuit (Dl, D2, Ll) and to said first inductive element (L4) .

Inventors: RICHARDSON MICHAEL-RICHARD, RICHARDSON, MICHAEL-RICHARD
Applicants: INFINEON TECHNOLOGIES AG, RICHARDSON MICHAEL RICHARD, RICHARDSON, MICHAEL-RICHARD
Application year: 2000
Main classification: H03B5
IPC codes: H03B5