METHOD AND APPARATUS FOR IONIZED PHYSICAL VAPOR DEPOSITION

Abstract: Ionized Physical Vapor Deposition (IPVD) is provided by a method of apparatus (500) particularly useful for sputtering conductive metal coating material from an annular magnetron sputterin target (10). The sputtered material is ionized in a processing space between the target (10) and a substrate (100) by generating a dense plasma in the space with energy coupled from a coil (39) located outside of the vacuum chamber (501) behind a dielectric window (33) in the chamber wall (502) at the center of the opening (421) in the sputtering target. A Faraday type shield (26) physically shields the window to prevent coating material from coating the window, while allowing the inductive coupling of energy from the coil into the processing space. The location of the coil in the plane of the target or behind the target allows the target-to-wafer spacing to be chosen to optimize film deposition rate and uniformity, and also provides for the advantages of a ring-shaped source without the problems associated with unwanted deposition in the opening at the target center.

Description: - I - M ETHOD AND APPARATUS FOR ION IZED PHYSIC AL VAPOR DEPOSITION This application claims priority to U.S. patent application Serial No. 09/442,600 of John Drcwery et al., filed November 1 8, 1999, hereby expressly incorporated herein by reference. Field of the Invention: This invention relates to the Ionized Physical Vapor Deposition (IPVD) and, more particularly, to methods and apparatus for depositing films, most particularly metal films, onto semiconductor wafer substrates by sputtering the coating material from a target, ionizing the sputtei cd material, and directing the ionized coating material onto the surface of the substrates. Background of the I nvention: loni/cd physical v apor deposition is a process w hich has particular uti lity in fil ling and lining high aspect ratio sli uelLii es on si licon u afci s In I PVD. I i deposition ol ' lhin coatings on scmiconductoi vvafci s, materials to be deposited are sputtered or otherwise vapoπ/cd from a source and then a substantial fraction of the vapoπ/ed material is converted lo positive ions before reaching the wafer to be coated. T ins lom/ation is accomplished by a high-density plasma which is genci ated in a pi ocess gas in a v acuum ehambei . The plasma may be generated by magnetically coupling RF energy through an RF powered excitation coi l into the vacuum of the processing chamber. The plasma so generated is concentrated in a region betw een the source and the wafci . Then electromagnetic forces arc applied to the positive ions of coating material, such as by applying a negativ e bias on the wafer. Such a negative bias may cither arise with the wafci electrically isolated, by reason of the immersion of the wafer in a plasma, or by the application of an RF voltage to the vvafei . The bias causes ions of coating material to be accelerated toward the wafer so that an increased fraction of " the coating mateπal deposits onto the wafer at angles approximately normal to the wafer. This allows deposition of metal ov er wafer topography including m deep and naπ ovv holes and trenches on the wafer surface, providing good coverage of the bottom and sidewalls of such topography Certain systems proposed by the assignee of the present application arc disclosed in U.S. Patent Applications Sei ul Nos 08/844.75 1 . OS/837.55 1 and 08, 844,756 fi led Apri l 21 , 1 997, hereby expressly incorporated herein by reference Such systems include a v acuum chumbei w hich is typically cylindrical in shape and provided w ith part ot its curv ed outei w al l lormed ol a dielecu ic matei ial oi w indow A helical electrically conducting coil is disposed outside the diclcctnc w indow and around and conccnti ic w ith the ehambei , with the axial extent of the coil being a significant pan of the ax ial extent of the diclcctnc w al l I n opei aiion, the coil is enei gi/cd from a supply of RF power thi ough a suitable matching system. The dielectric window allo s the energy from the coi l to be coupled into the chamber while isolating the coil from direct contact w ith the plasma T he indow is pi otected from metal coating material deposition by an aπ angcmcnt of shieids, typically formed ot metal, w hich ai c capable of passing RF magnetic fields into the interior l egion of the ehambei , w hi le pi ev enting deposition of metal onto the dielectric window that would tend to form conducting paths foi en dilating currents gcnei atcd bv these magnetic fields Such currents arc undesirable because they lead to ohmic heating and to reduction of the magnetic coupling of plasma excitation enci gy from the coils to the plasma. 1 he puiposL ol this excitation eneigy is to geneiatt high-density plasma in the inteiioi legion ot the ehambei A lcduction ot coupling causes plasma densities to be icduced and pioecss lesults to dcteπorate In such IPVD systems, mateiial is loi example spulteied fiom a taigct, which is chaiged negatively with icspect to the plasma, usually by means of a DC powci supply The taiget is often of a planar magnetron design incorporating _> a magnetic circuit 01 other magnet structuic which confines a plasma over the taiget for sputtering the target The material arrives at a wafer supported on a wafer support or table to which RF bias is typically applied by means of an RF power supply and matching netwotk A somewhat different geometiy employs a plasma generated by a coil placed internal to the vacuum chamber Such a system does not require dielectric chamber walls nor special shields to protect the dielectric walls Such a system 0 is described by Barnes et al in US Patent No 5, 178, 719, expressly lncoipoiated by reference herein Systems with coils outside of ihe ehambei as well as the svstcin disclosed m the Baincs et al patent, involve the use ol inductive coils oi othei coupling elements, cither inside or external to the cuum that arc physically positioned and occupy space between the planes of the sputtering target and the wafci \\ hethei a coupling clement such as a coil is piovidcd inside oi outside of a vacuum ehambei, dimensions of 1 the system have been constiained bv the need loi adequate souicc-lo-substiatc sepaiation to allow tor the installation of the RF cneigv coupling elements between the souicc and the substrate Adequate diameter must also be available around the vvatci foi installation of coils oi othei coupling elements As a diicct lesult of the increased sourcc-to-substrate spacing due to the need to allow space foi the coupling element it is difficult to achieve adequate uniformity of deposition with such systems If the height ot the ehambei is icduced to impiovc uniformity there is a loss of plasma density in the 0 ccntial region of the chamber and the percentage of lom/ation of the coating material is icduced Also, in practice, the entire system must fit within a constrained radius As a icsult, theie aic ficquently pioblems due to heating arising from the pioximity of the RF coils to metal stiifaees, which may necessitate extia cooling, which inci eases engineciing and pioduetion costs and wastes povvei An IPVD appaiatus with the coil in the chamber has the additional disadvantage that the coils are eroded by the "> plasma and must, thcicfoie, consist of target guide mateiial of the same type as that being sputtered from the target Moicovci, eonsidciablc cooling ot coils placed in the vacuum chamber is needed If liquid is used tor this cooling of the coils theie is dangei that the coils will be pcnctiated bv uneven eiosion oi b> aicing causing a icsulting leak of liquid into the system which is highly undcsnablc and will hkclv icsult in a long pcnod of cleaning and ic-qualification of the system I uithermoic an excitation coil in the ehambei also couples capacitively to the plasma, leading to inefficient use 0 ot the excitation power and to the bioademng of the ion eneigy spectrum which may have undesirable effects on the piocess The inimatun/ation ol semieonductoi devices has icsultcd in a need to toim low resistance connections to contacts ai the bottoms of high aspect latio holes ot a liaction of a micion in diamctci This has increased the demand foi the use ot highly electπcallv conductive metals such as coppci. ovci baincr laycis of materials such as tantalum and "> tantalum nitiidc The techniques foi depositing such mateiial s in the pnoi art ha e not been totally satisfactoiy The deposition ot matei ils by PVD methods has in the prior art mvolv ed critical designs of sputtering sources to piodtice plasma concenti tions ot uniform geometries ithin sputteiing chambers and to directly affect the distnbution umtoimitics ol the deposited tilms The pnoi ait appioachcs have icsultcd m compiomises of othei peiformance parametcis to those ends As a result of the abo e considerations and problems, there remains a need for more efficiently coupling energy into the dense coating material ionizing plasma in I PVD processing systems, and to do so without interfering w ith the optimum dimensions of the chamber and preferably without placing a coil or other coupling clement into the vacuum chamber Summary of the Invention: One objective of the present invention is to prov ide an IPVD method and an IPVD apparatus in which the placement of the coil or other coupling element does not adversely affect the geometry of the chamber of the processing apparatus. Another objective of the present invention is to provide a more efficient and effective method and apparatus for the performance of IPVD. According to the principles of the present invention, an I PVD apparatus is provided with a ring-shaped source of coating material for producing a vapor that includes atoms or minute particles of the coating material to a processing space within a vacuum chamber. At the center of the ring-shaped source is provided a coupling element for rcactively coupling RF eneigy into the ehambei to pi oduee a high-density, l cactiv cly coupled plasma in the processing space to loni/c coating material passing through the processing space The ions of coating material drift, whether tinder the influence of electrostatic or electromagnetic fields or otherwise, toward a substrate in the chamber, at the opposite end of the processing space from the source. Those ions that arrive within a certain distance, for example, m the order of a centimeter, from the substrate, encounter a sheath field and arc accelerated toward the substrate so that a high percentage of the coating material arrives on the substrate at angles normal to the substrate, thereby more effectively lining the bottoms and sides of " , or filling, small and high aspect l atio features on the surface of the substrate. In one embodiment of the invention, a coating material source, preferably a sputtering target, is provided with a central opening in which is placed a dielectric window . Behind the window, outside the vacuum of the chamber, is located a plasma source which includes a coupling element, preferably a coi l, which is connected to the output of an RF energy soui cc. The coupling element is configured to couple, preferably inductively, energy supplied from the energy source through the window at the opening at the center of the material source and into the region of the chamber between the coating material source and the substrate, such as a semiconductor wafer, on a substrate support at the opposite end of the chamber from the coating material source. The apparatus of the present invention includes an annular sputtering target which surrounds a central cei amic window. 1 his annular target is preferably f ' rusto conical in shape. A magnetron magnet assembly is positioned behind the target to pi oduee a plasma con fining magnetic Held ov ci the target, pi efcrably in the shape of an annulai tunnel on the surface of the annular target surrounding the central opening at its center The coupling element is preferably a coil positioned behind and close to the back outside surface of the dielectric indow at the centi al opening of an annulai sputtei ing tai get RT enei gy of, foi example, 13.56 MHZ, is applied to the coil to excite a high-density inductively coupled plasma in the chamber between the target and the substrate. A main sputtei ing plasma that is trapped tindci the field of the magnetron magnets at the surface of the target, sputtei s coating material fi om the tai get and into the region of the pi ocessing space occupied by the dense secondary plasma, w hei e a substantial portion of the material is stripped of electrons to form positive ions of the coating material A negative bias voltage is applied to a wafer on the substrate holder, which attracts the positive ions of " sputtering material from the region of the secondary plasma and toward and onto the surface of the substrate, with the angles of incidence approaching being perpendicular to the substrate so that they can enter trenches and holes on the wafer substrate to coat the bottoms of these holes and trenches. C crtain embodiments of the apparatus and method of the invention include an I PVD source that employs a three- dimensional coil that energizes a dense inductively coupled three-dimensional plasma in three-dimensional regions within the chamber. The chamber is operated al a v acuum pi cssure of between 30 and 130 mTorr to essentially thermahze the plasma, so that ions of coating material can be formed in the plasma and electrically directed perpendicular to and onto the substrate, thereby reducing the effect of target and magnet configuration on coating uniformity. The IPVD source is coupled through a window into the chamber through a high dielectric material such as a TEFLON spacer and then through a dielectric window such as quartz which forms the vacuum barrier closing a circular opening in the chamber wall at the center of an annular target. Inside the chamber is a window shield having chevron-shaped slots therein oriented relative to the conductors of the coil. The shield protects the window from deposits, particularly deposits of metallic coating material, while passing inductively coupled RF energy into the chamber. The shield may further function as a Faraday shield, preventing capacitive coupling from the coil to the plasma and avoiding flux compression heating. The shield has integral cooling and is formed of cast copper which is plated with aluminum, so that the shield can be reconditioned by chemically dissolving aluminum coating to remove buildup and then re-plating the copper shield with aluminum for reuse. The window and shield assembly form a removeable combination. The window and shield are spaced so the window is self cleaning adjacent the slits in the shield by plasma that forms at this point in the slits. The target is preferably frusto conical, with the walls of the truncated cone inclined about 35° to the horizontal or plane of the indow . A permanent magnet pack is employed which produces three, and preferably only three, magnetic tunnels over the target surface, with a main central tunnel dominating early in the target life to erode the mean radius of the annular target and two side tunnels taking over later in the life of the target to erode grooves adjacent the inner and outei rims of the taiget annulus. The apparatus preferably uses a w afer holdei mounted for vertical motion on a Z-tablc motion drive to provide for target-to-substrate spacing (TSS) of from six to nine inches and to provide for wafer handoff to a transfer arm from a transfer module. The support is provided with an electrostatic chuck, and wafer heating and cooling is provided using a Peltier device remote from the support that connects through a GALDEN fluid loop with the support and through another fluid loop with a heat sink. The electrostatic chuck is tπ-polar with the chuck grid serving as electrodes to provide 2-zone bias to the wafer to attract the ionized sputtered material to the wafer. A shadow ring is provided around the edge of the w afer to provide non-contact edge masking The chamber has a removable shield insert in two parts that mechanically float relative to each other to accommodate different expansions due to difϊeicnt heating. The shield assembly is a replaceable subcombination . The appai atus is particularly useful foi depositing coppei o ei tantalum and tantalum nitride and foi depositing the undei lying tantalum and tantalum nitride barrier layer ov ei a patterned wafei , with Ta deposited by ionized PVD and TaN deposited bv PVD in the same ehambei , followed by deposition of copper by ionized PVD in a similar module attached to a transfer module of the same tool The copper so deposited is suitable to be followed by any of many methods of Cu fill, pai iicului ly by electi oplating T he pi ocesses aie pi efei ablv earned out using process parameters, including: pressuies, tempeiatui es, gases, bias power and/oi voltage lev els, sputtering pow er levels, 1C power levels, etc., as described below W ith appai atus structui c according to the invention, the processing chamber can be dimensioned to provide optimum spacing between the coating material source and the substrate to provide both good lomzation of sputtered species as well as good uniformity of deposition on the wafers The present invention provides greater freedom of design choice in configuring the processing chamber to optimize the I PVD process, and does so whi le overcoming the difficulties set forth m the background above. These and othei objectives and advantages of the present invention will be more readily apparent from the follo ing detailed description of the diav ings. Brief Description of the Drawings: Fig.1 is a schematic cross-sectional diagram of " one embodiment of IPVD apparatus according to the present invention. Fig.1A is a cross-sectional diagram similar to Fig.1, illustrating the apparatus with the IPVD source being removed. Fig. IB is a diagram, similar to Fig. I A, illustrating the IPVD source of the apparatus with the source flange and target assembly being removed. Fig. IC is a partial cross-sectional diagram of the IPVD source of the apparatus of Fig.1, the line along which the cross section is taken being illustrated m Fig.13, described below. Fig. ID is a disassembled perspective view of the IPVD source of Fig. IC. Fig.2 is a disassembled peispeclivc view of " the housing portion of the IPVD source of " Figs. IC and ID Fig.3 is a disassembled perspective view of ' the taiget assembly portion of the IPVD source of Figs. IC and ID. Fig.3 A is a fiagmentary perspective view of a portion of the cover of the target assembly of Fig.3. Fig.4 is an enlarged schematic cross-sectional v icvv of ' the magnetron magnet assembly of ' the IPVD source of Figs. l and ID Fig.5 is an enlarged cross-sectional view, similar to Fig.4, illustrating an alternative magnet assembly. Fig.6 is a disassembled perspective view of the shield and window assembly of ' the IPVD source of Figs. IC and ID. Fig.6A is a cross-sectional view of the ended portion of Fig.6. Fig.7 is cross-sectional view of the RF source assembly of the IPVD source of Figs. IC and ID. Fig.8 is a disassembled perspective view of the RF source assembly of Fig.7. Fig.9 is an axial cross-sectional view of cooling manifold mounting assembly of the IPVD source of Figs. IC and ID, the line along which the cross section is taken being illustrated in Fig.13, descπbed below. Fig.10 is an enlarged cross-sectional view of " one embodiment of a fluid coupling assembly portion of the assembly of Fig.9, the line along which the cross section is taken being illustrated in Fig.13, descπbed below. Fig.11 is an enlarged cross-sectional view of the mounting connector assembly of " the assembly of Fig.9 toi the window and shield assembly of Fig.6, the line along which the cross section is taken being illustrated in Fig.13, descπbed below Fig.12 is dn enlaiged cioss-seetional view of a DC contact stub portion of ' the assembly of Fig.9 of ' the IPVD souice assembly of Figs. IC and I , the line along hich the cross section is taken being illustrated m Fig.13, described below Fig.13 is a top view of ' the magnet and cooling manifold mounting assembly portion of the IPVD source assembly of Figs. IC and ID Fig.13A is an enlaiged v icvv of the encnclcd portion maikcd 13A m Fig.13. Fig.14 is a disassembled perspective view of the IPVD source flange and dark space shield of ' the IPVD source assembly of Figs. IC and ID Fig.15 is a bottom perspective view of the elect! ostatic chuck wafci support assembly of the apparatus of Fig.1. Fig.16 is a side disassembled peispcctivc view of the vvafei support and lifting assembly portion of the appaiatus of Fig.1 foi the afci support ot Fig.15 Tig.17 is an axial cioss-scctioπal view of the w fci support assembly portion Fig.16 Tig.18 is a peispcctivc view ot the wafci support vertical position ad]iιstmcnt assembly of the apparatus of Fig.1 Fig.19 is a top peispective iew of the vacuum chamber wall assembly of the apparatus of Fig.1 Fig.20 is a side perspective view of the lovvci portion of the apparatus of Fig.1 showing particularly the vacuum chamber wall assembly of Fig.19 and the gas vacuum system portion of the apparatus Fig.21 is a schematic diagram of the gas vacuum system of Fig.20 Fig.22 is a disassembled perspective view of the sputter shield portion of the chamber wall assembly of the apparatus of Fig.1 Fig.23 is a disassembled perspective view of the IPVD source hoist mechanism of the apparatus of Fig.1 Detailed Description ol the In ention: An ionized Physical Vapoi Deposition (IPVD) appaiatus 500 accoiding to one embodiment of the piescnt invention is illustiatcd in Fig.1 The IPVD appaiatus 500 includes a vacuum ehambei 501 bounded by a chamber wall assembly 502 The ehambei 5()| is piovidcd with an IPVD souice 503 supplying coating mateiial in vapor form into the volume of the sputteiing ehambei 501 and foi ionizing the sputtering material vapoi, an electrostatic chuck vvafei support system 507 foi holding vvatcis dining pioccssing, a wafci handling system 504,504a for loading and unloading vvuleis loi pioccssing, a vacuum and gas handling system 505 (Figs.20-21) foi evacuation of the chamber 501 to a vacuum picssuic level, an IPVD souice hoist 460 foi icmoval and replacement of the target and for peiforming other sci icing of the souice, and a contiol system 509 which operates the othei systems of the appaiatus 500 in accoi dance with the methods and pioccsscs descπbcd heicui and othci isc earned out with the appaiatus 500 The appaiatus 500 is a seiviccablc module capable ot pioviding fcatuics and operating conditions including the following (I) base vacuum ot less than 10 s Ton, (2) opciating inert gas pressure of between 30 and 1 0 mToπ, (3) provision for reactive gas at partial picssuic ot 0-50 mToπ, (4) variable substratc-to-target spacing of 6 to 9 inches. (5) electrostatic chucking with backside gas heating oi cooling, and (6) shielding that restricts deposition to removable clcanablc components with surfaces having good adhesion of sputtered mateiial to prevent particle generation Thegeneial concepts ot the IPVD souice 503 aic described in U S patent application Serial No 09/073,141, hereby expressly lncoiporatcd lieiein by icfcrci.ee The pailiculai implementation ot the source 503 includes a πng- shaped taiget 10 ot a tvpe laid out in that application pailiculai Iv one ol a tiusto-conieal shape Essentially the pimciplc objectives ol the IPVD souice 503 include pioviding the following fcatuics and pioperties (I) to rcquue minimum opciatoi effort and smallest possible set of tools to pci toim loutinc tasks, (2) to provide separation of RF and DC powei fiom anv watci oi othei cooling fluid to the best extent possible, (3) to piovidc relative simplicity of design and opeiation, (4) to allow uipid lcpau oi lcplacemcnt ot the souice including quick lcplaccmcnt ot the whole internal souice assembly ιapιd change of the taiget and of the vaiious ehambei shields, (5) to piovidc modular internal assemblies, and (6) to maintain RT shielding intcgiity to pi event leakage of ladiation into the operating envuonment The IPVD souice 503 lcsts upon the top ot the wall 502 and is piovided with a souice flange and daik space πng assembly 470 that toπns a vacuum tight seal with the wall 502 aiound the peπmetci of a circular opening 412 m the top of the chamber wall 502 The IPVD souice includes the annular target 10 and an RF source assembly 450, which encigizcs ύn inductively coupled plasma m the ehambei 501 The RF souice assembly is situated in an opening 421 inside ot the annulus of the taiget 10, opposite a vvafei toi example, a 200mm 01300mm vvafei 100 which is to be mounted on an elcctiostatic chuck 97 of the watci support svstem 5()7 The souice 503 includes a souice housing assembly 410 that includes a souice housing I (Fig.2) hich is pictciably an aluminum cldment The souice housing I includes stiuctuie toi mounting the woiking pans of the souice 503, and coupling stiuctuic 411 for lcndeπng the source 503 ~> capable ot being engaged, lifted and lowcicd bv the souice hoist assembly 460 foi installation on, and removal from, the appaiatus 500, as illustiatcd in Fig.1 \ Once lifted bv the souice hoist 460, the IPVD source 503 can be rotated and thus inverted by the hoist 460 fiom its opciative. downwaidly facing orientation (Fig.1 and 1A) to the upwaidly facing orientation of Fig.1 B which the source 503 can be scrv iced, for example, to replace the target 10 or to remove other components of the souice 503 foi cleaning or servicing 0 As illustrated in Fig.2, the IPVD source 503 is the source of the coating material and the lo zation energy foi producing the ionized coating material tor deposition by the IPVD apparatus 500 Target sputtering power is bi ought into the housing 1 via a connector 2 For depositing metal oi other electrically conductive coating material, the target sputteπng powei is DC power supplied bv a DC povvci supply (not shown) on the apparatus 500 Where non-conductive material is to be deposited, the target povvci is piovided by an RF powei supply The povvci conncctoi 2 mates to a 5 conncctoi 2a pcimancntly mounted on the ehambei wall 502 when the souice 503 is installed in its opciating position on the top of the ehambei 501 As a lesult, taiget povvci cannot appeal on the taiget 10 without the souice 503 in place on the ehambei 501 A negative DC tccd 147 passes thiough watertight stiain icheving bushings 149 to a socket 3 mounted in an insulating block 4 inside the housing 1 while a positive feed 148 is connected diicctly to the housing I which is typically maintained at the svstem giound potential 0 Ports 3 aie piovided m the top of the housing I thiough which pass conductois 40 (Fig. 7) for RF connections 152 to an RF tunci 96 (Fig.2) of an inductively coupled plasma (1CP) geneiatoi (Figs.6-8) on top of the souice housing I The autotunei 96 is a comma cial unit that mounts to the top ot the souice housing I (Fig.2) Laige female conncetois 40a supply powei to the RF coil assembly 450 via conncetois 40 (Figs.7-8) Outside of the housing I RT cables connect the RF tunci 96 to an RF geneiatoi (not shown) on the appaiatus 500 The housing 1 is also piovided ~> with an intci lock switch 6 that detects the picscncc ot the RF tunci unit 96 and the coil assembly 450 An intcilock switch 7 is piovided that is actuated by a pushiod mechanism 7a, which is activated by a spring loaded pin 166 (Figs.9 and 13) to activate the switch 7 when the taiget 10 is piopeilv installed The intcilock 7 is piovided to ensure that water and povvci cannot be supplied unless the taiget 10 is m place and locked down A canted coil spπng 8 is piovided that makes an electπcal connection to a source flange and dark space ring assembly 470 0 suπounding a ciieulai opening 412 in the top of the wall 502 ot the ehambei 501 A pluiality of, foi example thiec to six hand-opeiatcd clips 9 aic piovided at equally spaced intciv ls aiound the housing 1 which when ldcascd allow the souice flange and daik space πng assembly 470 to be icmo ed and the taiget 10 to be changed oi othciwisc sei viced oi to pcimii icinovdl and icplaccmcnt ot the laiget 10 oi the sci vicing of othei components ithin the souice housing 1 Ports I 50 aic piov ided toi vvatei inlet and outlet and ports 1 ~> 1 aic piov idcd loi a connection to a watci loop external to 5 the mam souice housing 1 The taiget 10 is part of a taiget asscmblv 420 which is illustiatcd in Fig.3 The target 10 is fiusto conical, and is designed to minimize manulactuimg costs It has a single uppei ϋ-iinggioove I 1 defining the uppei vacuum coupling and a well-linished suitacc 427 which makes the lowci coupling The leai 428 of the taiget 10 is smooth The taiget 10 may be monolithic as is usually the case when the taiget 10 is coppei, oi it may be toimed bv bonding a layei of souice mateiial to a stiuctuial backing plate bv one ol a numbci ol techniques well known to sputteiing cnginceis The opposite sides of the taiget define ΛΠ included angle ot divemence ot a cone which is piefciably about I 10° 1 he 110° included angle of the conical taiget 10 was selected attci extensive computci modeling, using the HPEM code of Kushnci et al This angle leads to optimum uniformity of deposition at the pressuies, powcis, and taiget- 5 substiate spacmgs of, picteiably, about six to nine inches A smaller included angle might also be dcsnable, but angles lowci than 90 dcgiecs aic expected to lead to a t eduction in deposition rate without much uniformity improvement Highei included angles aic expected to give pooiei taiget utilization and poorer deposition uniformity An O-iing gioove 11 is piovided at the uppei exti erne of the taiget 10 at the inner edge of the target annulus around cential opening 421 of the target 10 Castellated features 12 are provided to the outside of the O-ring groove 11 0 to allow the taiget 10 to assemble to a cooling watci system 422 (Fig.9) without the use of screws A step 154 is provided in the inside diametei around the opening 421, which, in combination with a similar step m the window shield and window assembly 440 (Fig.6), descπbed below, prevents deposition of metal on a dielectric window 33 that covcis the opening 421 also as described below The target 10 mates ith a cooling covet 13 to define the cooling water system 422 This covci 13 has 'quad 5 i mg" vvatei seals 14 and 15 on its inside on each side of a channel 16 These seals 14,15 contact the I cai ot the target 10 when the target 10 and covci 13 aie assembled Bavonct assembly structure 153 is piovided which mates with the castellated fcatuics 12 on the taiget 10 to connect the covci 13 to the taiget 10 To |θin the target 10 and covei 13, slots 17 aic piovided in the covet 13 to allow the covci 13 to be dioppcd ovei the castellated features 12,aftcι which the target 10 and cover 13 aic rotated with respect to each othei to produce a 'jam μi' effect that tightens the parts 10,13 0 togcthci as they aic lotatcd thiough about 20°, which is somewhat less than half of the angular spacing between the castellated fcatuics 12 and the matching bayonet assembly stuictuic 153 Watci foi taiget cooling cntcis and exits the cooling covci 13 via ports 155 into manifolds 18 formed in a ring- shaped channel 16 in the tiont stiitacc ol the covci 13, as illustiatcd in Fig.3A These ports 155 and manifolds 18 are located 180 r horn each othei aiound the channel 16 m the covci I 3 The manifolds I 8 aic dccpci than the channel 16 _ι and each occupy about a 10 scctoi of the channel 1 On each side of each manifold 18 is a groove 19a that accepts a comb 19 Each comb 19 is a thin metal insert that beais a scπcs of notches 19b These notches 19b divide watci into scpai tc streams as it enters the ma channel 16. avoiding the formation of stagnation legions in the water flow which could lead to a leduction of cooling efficiency oi possible local boiling of the water The design of the combs 19 is determined by computational flow dynamics modeling The combs 1 may be removed and replaced with othei s designed 0 foi diffeient flow lates veisus picssure lelationships without lemoval and icplaccment of the entire cover 13 At the end ot target lite, the covci I 3 may be icmovcd fiom the expued target and reused Water coupling is made thiough the covei 13 into the manifolds 18 via spπng loaded watci couplings 69 (Figs.9-10) which aie descπbed below DC po ei is connected ia a spπng loaded stub 80 (Fig.12), descπbed below The IPVD souice 503 includes a magnction magnet assembly 430, illustrated in Fig.4, which includes a magnet -ι pack 20 that connects to the back of the tai et assembly 420 The magnet pack 20 includes a steel yoke 21 and a seπes of magnets 22 anangcd in thiec lings including an innci πng 22a an lntcimcdiate ring 22b and an outei ting 22c, as shown The lcsultmg field lines pioduccd by the magnets 22 include a mam magnetic tunnel 26, which affects the target eiosion at the beginning ot a taiget life and uins in a ciieulai path along an intei mediate radius of the annulai taiget 10 and innci and outei magnetic tunnels 27 and 28 lespcctively which distπbute the target erosion towaid the inner and 0 outei πms of the tamet annulus tovvaid the end of the taiget life The erosion groove due to this aπangement thereby bioadens as the taiget ciodcs leading to enhanced tamet mateiial utilization The magnets 22 aic held in then locations by adhesive bonding Non-magnetic πngs 23 may be used to space the magnets coπectly and the assembly may be encased in a molded plastic mateiial body 24 having a convenient shape foi mounting to the souice housing 1 vn alternative magnetic indu c ement is shown in I ig 5 This simplci design is expected to lead to lowci taiget 5 utilization than that shown in Fig 4 The magnet assemblies 20 are pieferably designed so that at least a portion of a magnetic tunnel traps plasma ovei the target 10 so that a net ciosion of the taiget 10 takes place at all times over the target lite so that no net icdeposition takes place on the taiget 10 One a) this can be achieved is by placing the intci mediate magnet πng 22b sufficiently fat horn the taiget so that its held docs not cancel the tunnel formed by field lines ot the main tunnel 26 that extend between the opposite poles of the innei and outer magnet πngs 22a and 22c 0 The magnet packs contain a number of holes 25 boied paiallel to the axis which carry the feedthroughs for watei and DC powei leading to the taigcl The assembly ol magnets 22 is coated with a haid polymei coating such as polyurethane or enclosed within non-magnetic metallic or plastic cladding pieces, which arc bonded to the magnet pack 20 This coating prevents the magnets 22 and yoke 21 from becoming oxidized in air and also pi events the magnets 22 which may be of sintered construction fiom becoming a contaminating particle source 5 The IPVD souice 503 also includes a window and window shield assembly 440 which is illustrated in Fig.6 The shield and window assembly 440 includes a diclcctnc window 33 fonncd of a lapped, high purity alumina plate 7mm thick and a window shield 26 toimed ot an elcctπcallv conductive mateiial such as aluminum oi coppei For metallic coaling mateiial the shield 26 is pictciably made ol metal and may function as a Faiaday shield The shield 26 has an intcgial cooling watei channel 27 loimed thcicin and dchncd between an annulai nm portion of the shield 26 and an 0 annulai channel covci πng 27a biaiscd oi welded to the πm 27a of the shield 26 A numbci of slots 28 aic milled into the shield 26 The slots 28 aic piclciablv chcvion shaped in cioss section as illustiatcd in lig.6A oi have some othei cross section that blocks line of sight paths and pioiccts the window 33 fiom direct deposits of coating material from within the ehambei ->0I I he dimensions ot the slots 2S aic optimized by computci modeling to balance tianspaicncy of the shield 26 to RF eneigy against minimum tiansmission of sputtcicd mateiial fiom the piocess region of the ehambei "> 501 to the diclcctnc window 33 Vv atci connection to the channel 27 ot the shield 26 is made via stainless steel stubs 29 which thiead into the shield 26 and make a water seal via O-rings 30 Each of the stubs 29 has external tin cads 31 and a conical tapcied end 32 on which a smooth finish has been placed The assembly of the shield 26 with stubs 29 attached is assembled to the window 33 by inserting the stubs 29 thiough holes 34 in the diclcctnc window 33 which align with holes 34a which aic 0 180° apart aiound the run of the shield 26 and which communicate with the channel 27 Theie are two holes 34 through which the water stubs pass one for atei inlet and one foi atei outlet TEFLON washeis 35 and aluminum knuiled nuts 36 aie scicvved onto the stubs 29 and compiess O πngs 37 between the indow shield 26 and the window 33 foιτnιn_ a vacuum sell aiound the ltci stubs 29 O πn_;s 3S aic piovided m the nuts 36 which have no scaling function but pel toim the function ol i spun.. hclpm_ lo piev cm ov cι tightenin g ot the nuts 36 "ι A dense sccondaiy plasma toi ionizing mateiial that has been sputtered fiom the target 10 is excited bv an RF coil assembly 4">0 illustiatcd in Tig 7 hich includes a thiec dimensional coil 39 whose configuration and electπcal pcifoimai.ee and piopcitics aie dcscπbcd in L S patent application Scπal No 09/277526 filed on Maich 26 1999 entitled Piocess Appaiatus And Method Foi lmpioving Plasma Distnbution And Peiformanee in an Inductivelv Coupled Plasma invented by Jozcf Bieka an invcntoi heicm hcicbv expressly mcoipoiated heicin by ieferei.ee The RF feeds 0 to the coil aic piovided by a pan of male conncetois 40 that thiead into sockets 41 in the coil end pieces 42 Watei feed is provided through a pair of threaded pipe couplings 4.3. These couplings are surrounded by a flange 44 with an O-πng The coil 39 is mounted w ithin a high dielectric insulating cup 46 made of " material such as TEFLON The thickness of material of the cup 46 m various areas of ' the cup surface is calculated to be as thin as possible consistent with the suppi ession of " arcing to the nearest conductiv e surface. To make this calculation, the effective field and pressure- distance product in air are calculated for the stack consisting of the TEFLON, an air gap, and any other dielectric such as the source w indow 33. The thickness of TEFLON can be set so that the field is always lower than that required to cause breakdown of air, for reasonable values of the air gap. This calculation al lows the cup thickness to be minimized safely A minimum thickness al low s the best coupling to the plasma and lessens the constraints on the dimensions of ' the The cup 46 is mounted in an aluminum πng 47. This πng is mounted to the water cooling assembly 422 using shoulder screws 62 and springs 63 which, in operation, press the ring against the dielectric window 33 which is part of the window and shield assembly 440 described above. This window 33, in turn, is pressed against the target upper O-πng 48, which is located m the groove 1 1 This spring loading compensates for tolerance mismatch and mechanical deformation and so holds the vacuum seals together and allows the system to be pumped down. The πng 47 also features a canted coil spring 49 and a tube 50 for cooling water. There are two axial holes 5 I in the ring 47 through which shield water stubs 29 from the window shield can pass ( Fig. 8). Recesses 52 arc provided around the holes 51 in the back of ' the πng 47 for TEFLON washers 53. An aluminum enclosure 54 is mounted ov ei the coil 39 and held down by a bolt circle so that there is electrical continuity thi ough the canted coi l spπng 49. to the aluminum πng 47. The purpose of this is to prevent water leaks, if any, from I caching the high voltages present on the coi l and to act as a primary barrier to RF emission from the source. RF energy can escape only through the dielectric window 33 into the process space of ' the chamber 501 . The enclosure is pici ccd in four places, tw o ports 55 carrying RF feeds and two ports 56 carrying water feeds for the coil 39 TEFLON pans 57 ai e passed thi ough the w atei feed ports 56 and pass ovei O-rings 45 making a water seal. This provides secondai v containment so that a w ter leak in the coil w ater coupling docs not lead to water being in contact with the RF elements TEFLON insulating pieces 58 arc used to stand the coil and RF connectors off clcctπcally from the enclosure. TEFLON combs 59 arc used with insulating screw s to hold the coil down to the cup 46. This leads to consistent behav ior between different sources. As illustrated in Fig. 9, cooling water is distributed via components mounted on a large plastic plate 60 which also supports the magnet assembly 430, which is mounted thereto on spacers 61 , and the RF source assembly 450, which is mounted thereto using the shoulder screws 62. A ma aluminum manifold block 64 is mounted to the plate 60 and brings in w ater fi om the exterior of ' the source via threaded connections. A secondary manifold 65 al lows the flow of water through the coil to be checked by a flow sensor mounted outside the source and also allows connection of ' the w atei flow to a cooling channel in the source flange and dark space ring assembly 470 Cooling w atci for the tamet 10 passes thi ough stub assemblies 68, as i l lustrated in Fig. 10. The assemblies 68 aic designed so that watci couplings 69 can be assembled through holes no larger than the outer diameter of the coupling tubes themselves; w hich allows the holes 25 in the magnet pack to be of minimum diameter, which minimizes the disturbance of ' the magnetic field that these holes might cause The assemblies 68 are spring loaded, the springs 70 acting betw een metal cups 7 1 that are pi essed into the plastic mounting block 60 and washers 72 that are held in place on the w atei tubes 69 by l etainmg πngs 73 In this w ay , in opci ation, the lower end of the cooling tube bears on an O-πng 74 that is toiced into a specially designed detail m the target cooling cover 13 The detail is a doubly tapcicd boie snnilai to that used ISO and SAE standaid fluid connecting glands The window shield 26 is cooled via special couplings 75 that also make a DC connection 423 to the shield, as illustiatcd in Iig.11 I he coupling tcatuies a tapcicd leeess with an mwuid facing O-πng 76 1 he entne fitting is spπng 5 loaded via spπngs 77, and when assembled, the tapcicd suitacc of the stub 29 is forced hard against the O-πng 76, making a water seal The canted coil spπng 77 pcifoims a double function Firstly, it makes clcctπcal connection to the shield 26 Secondly, it peifoπns a latching function, engaging a shallow recess the stub 29 which holds the shield 26 appioximatcly m place after it has been installed to the watci housing 422 Finally, this coupling bears a tapped hole 78 foi making clectπcal connections The coupling inserts into the RF assembly thiough the TEFLON washeis 53 Support 10 blocks 79 aic mounted on the block 60 and support the coupling, and they also apply pressure to the springs 77 These blocks arc fitted at then upper end with contact fingcis 156 which ground the entire assembly, and through it the Faraday shield, when the source is assembled, by making contact to the source housing 1 The block 60 also contains supports for two non-water-related items One is the DC contact stub 80, which is spπng loaded similaily to the target water couplings, as illustrated in Fig.12 In this case, the stub 80 is forced against I 5 the target cooling cover, contact being ensured by another canted coil spring 81 The upper end of the stub is fitted with a male connector 158 This DC connector stub assembly is surrounded by a plastic tube 159 that protects it horn spi y in the event of a water leak in the source The other item is a spring-loaded pin 166 (Fig.9) that passes through the magnet pack and beats against the taigcl cooling covci 13 (Fig.3) When the souice 503 is assembled, the uppei end ol this pin 166 bcais on another plungci assembly 7a dcsciibcd above, which, in tuin, activates a mictoswitch 7 The 0 activation of this switch 7 indicates that the taiget assembly 420 is coπcclly installed and, theiefoie, that it is safe to tum on the cooling watci The tei distnbution assembly 422 contains a numbci ol couplings and a considerable length of TEFLON hose In the event of a leak developing, it is desπ able that watci be dunned to the cxtcπoi of the souice and taken somcwheie it can be detected Thcietoie the block 60 contains a pattern S2 ot dunnage gioovcs that terminate at small holes S3 5 (l-ιg.2) in the souice housing 1 \ acuum leak checking ot the souice should be earned out The innci taiget O-iing as well as the window seal O-πngs aic rathci lelatively inaccessible Foi this icason, the block 60 is also piovided with stainless steel capillaiy tubes 84, which aic embedded into some of the giooves S2 as shown in Fig 13A Dunng leak checking, these tubes 84 can be used to feed helium to the vicinity ot the inaccessible O-πngs 0 Referring to Fig.14, the souice flange and daik space ring assembly 470 is illustiatcd This assembly 470 includes a source flange 67 on which is mounted the fixed parts 86 coπcsponding to the clips 9 A swagcd-in cooling watci tube 471 is piovided The uppei side beais a iccess 87 with an O-iing gioovc 88 into which is inserted a TEFLON insulatoi 89 which is itself piovided with an O-πng gioovc 90 Weep holes 472 arc piov ided leading tiom the iccess 87 to the outside diamctei of the flange which piovidc dunnage and visual w anting in the event ot a cooling uatei leak _) The O-i mg gioovc 90 bcais an O-πng 90a that mtci taccs to the tai et 10, foim g the outei vacuum seal The undcisidc of the souice flange 67 has anothci iccess into which is mounted the daik space shield 1 This shield 91 is held in place bv shouldci scievvs 92 that tighten into slot tcatuies 93 To lemovc the shield 91, the sciews 92 aic slightly loosened and the shield 91 then slightly tatcd and lifted ott The shield 91 is designed so as to not contact the souice flange 67 in legions ncai the O-iing gioovc 88 to avoid ovei healing ot that O-iing The souice flange 67 mtci faces clcctπcallv to the 0 piocess ehambei elcctiically using a canted coil spπng 94 An O-πng 95 makes the vacuum seal There are seveial featuies or considerations relating to the IPVD source 503 Assembly and dismantling for repairs is one In assembly, the fully assembled souice interior (less Faraday shield assembly 440 and taiget assembly 420) is diopped into the upturned source housing assembly so that the DC conncctoi 158 (Fig 12) inserts into the socket 4 (Fig.2) Six scicvvs aic inserted and watei connected to toui ports I 5] 152 Elcctπcal feeds aie plugged ~ι in The souice 503 is then icadv loi use Dism intliim is the icv cisc of assembly This simple assembly technique is an advantage of the modulai constiuction of the souice Routine tamet replacement is another such feature or consideration After cooling water has been blown out the souice 503 is inverted and the clips 9 leleased The flange assembly is then lifted off The target then can be lifted out and then the Faiaday shield assembly can be removed No tools are needed except to release the daik space shield 91 0 1 he electiostatic chuck 507 and the vvafei tiansfei system 504 cooperate in the tiansfcr of wafers from one to the othei The chuck assembly 507 includes a set vice support assembly 480 as illustrated in Fig.15 which includes the wafci support holder or chuck 97 A suitable chuck 97 may be obtained from INVAX Inc or other sources A fluid passage is piovided tor the passage of cooling fluid, foi example, a GALDEN brand perfluoπnatcd fluid The chuck 97 is of the tπpolar type, having two embedded electrically isolated electrodes for the application of a chucking voltage 5 while RF bias can be applied to the chuck body by way of the electrostatic chuck electrodes The RF is thereby coupled through to the embedded electrodes and thus to the wafer All metal parts of the chuck are aluminum coated with a propπctaiy dielectπc Back side gas can be piovided thiough a central hole A thermocouple is mounted to the rear of the chuck The chuck 97 has a numbci of countciboicd holes and is mounted to the stainless steel base 98 using scicvvs 0 theie aic polyimidc vcspcl insuldlois that piolccl the chuck lioni damage by the scicvvs and piov idc clcelπcal isolation An insulating block 99 isolates the chuck horn the base Fig.16 shows the mounting ol the chuck lo its support stiuciuics The stainless steel base 98 is fitted with rest pegs 101 which support a img 102 I he πng has fcatuics which vvoik with those on the rest pegs to give an accurate alignment ot the πng with the chuck I his πng has sockets 103 that aic fitted with cciamic lift pins 104 which pass ^ thiough holes in the chuck The ling 102 icsts on the pegs 101 duπng piocess As the table is lowered to the wafci tianstci position the img mteiccpts a sepaiatc assembly as dcsciibcd below, and is lifted oft the pegs causing the p s to use thiough the chuck and to lift the wafci off the chuck icadv toi tianstci to a handlci The base has a short downwaid extending tube at the end ot which is a flange I 19 that can be clamped to the Z dπve assembly 490 described below Two configuiations of shields foi this table aie shown in Fig.22 In the simplest case a stainless shield 105 icsts on a step on the base 98 and shields the chuck fiom metal deposition Altematively, a gioundcd shield 106 is supplemented bv a πng 107 which icsts ducctly on the chuck This ring may be made of aluminum or stainless steel and may or may not be coated with a diclcctnc mateiial possibly of high dielectric constant similai to that used in the chuck diclcctnc This img couples to the RF povvci that is applied to the chuck through the chuck dielectπc Advantages of this are that the shield can be in vci v close pioximitv to the chuck thereby moic effectively blocking metal deposition i and that RF povvci is applied to the img causing il to attain the sdme b s as the watei which lessens the distortion ol clcctt i fields ncai the walci edge I he πng ovei laps but is scpaiated horn the giounded shield This piovidcs a convoluted path foi metal deposition and keeps mateiial Iiom being deposited on the chuck The vvafei tianstci mechanism ->04 illustiatcd in Iig. 18 is attached to the base ot the chamber wall assembl y ι02 (I ig 19) using the thicadcd pegs 108 Aung I 09 is held in a laiscd position by spimgs 110 It is held in an aceuuite position by the featuies 111 and 112 Slotted pens I I 3 aic mounted to this ring When the table or chuck is lowei ed, the pegs 101 descend into the slots 114 m the slotted pegs The πng 102 is lifted and the pins 104 raised When the pins have lifted 1 I mm, the pegs 101 icach the bottom of the slots 114 Usually the ttansport system would now insert a pick to collect the vvafei Further lowering ot the table compi esses the spπngs I 10 causing the cntne system including the wafci on the pins to be lowci cd onto the pick The pick is now 1 amoved, bcaπng the wafα Bellows 1 I 5 D foim a vacuum baiπei while allowing the table to be niised and lowcicd Scivice support assembly 480 includes a πgid assembly 116, toimed by thiee silver plated biass tubes 117 with nvlon spacαs I 18 at legulai lntαvals and a silver plated plate at each end, is fixed to the chuck with scicvvs It has a tuple function that includes ( 1 ) mechanical support ot the chuck voltage vviics, thermocouple ncs teinpciatuic eontiol fluid tubes and backside gas tube, (2) RF powei conduction to the chuck body, and (3) conduction of tiogcn puige gas to the space behind the chuck At low operating 0 tempcratuies, watci condensation hindeis chuck opciation unless a gas purge is provided to sweep out moisture In this case theie aie small cioss holes in the support tubes πeai the intci face to the chuck Purge gas is connected at the lower end of the tube The vertical elevator or Z drive system 490 foi vertically moving and adμistmg the height of the chuck 97 is illustiatcd in Fig.18 This consists of a tube 120 ith an upper flange that can be coupled to the table flange 119 using 5 clamps 121 A rail 122 is mounted to the tube ich rides in shdcis 123 which arc supported on a bracket 124 A ball nut 125 mounted to a flange 126 at the lower end of tube 120 is driven by a lead screw 127 This screw is turned by a motoi and geaibox combination 128 The motoi is fitted with a biakc (not shown) that prevents backdπvmg of the motor when it is turned off The motor control system is conventional Position of the table is detcπmncd using an encoder mounted at the uppei end of the lead scicvv The bucket 124 is mounted to the piocess ehambei 0 A backside gas dehveiy system and components enelosuic 129 is mounted below the flange 126 This cnclosuie contains elcctionics loi conditioning of signals lunning to and horn the chuck 1 he table RF autotunei 130, a comma cial unit, is mounted to the cxtcπoi In one embodiment, valves and a univαsal picssuic contiollci (UPC) aie mounted lo the exteπoi ol the enelosuic 129 These components eontiol the backside gas dehveiy In the ftituie these components will be moved to 5 a position elsewheic A plasma aπcstoi is used to form an insulating bicak in the backside gas system and avoid plasma foimation in the gas line The vacuum and gas handling system 505 is illustiatcd in the diagum of Fig.21 This includes a ehambei and pumping system The ehambei 501 is contained within a ehambei wall assembly 502 which includes, paiticulaily, a vacuum tight chambα enelosuic 1 1 as illustiatcd in Figs.19 and 20, which is of a conventional stainless steel design 0 The enelosuic 131 has an internal isolation valve 132 foi coupling to a handlei of the transfer system 504 Theieaie upper and lower flanges foi the source and table assemblies and appropriate flanges for vacuum metering, piocess gas input, etc An eight inch conflat flange in the base couples to an isolation valve 142, and this is connected to a ciyogcnically cooled panel 143 operating at about 11 OK and a tuibomolcculai pump 144 The speed of the tin bo pump can be contiollcd to allow foi piocessing at iclaiivelv high gas prcssuies in low speed (about 24000 RPM) opciation while -> rapid pump-down from atmosphcπc piessuie is piovided at high pump speeds (3~>() Is ' nominal at about 16OOORPVI ) The tin bo pump is backed bv a non oil seaicd tvpc totaiv pump 145 which is also used to pump the ehambei down to lOOmToπ oi so aftci venting at which picssuic the isolation valve mav be opened 1 he vacuum aπangement is quite conventional except foi the use of the watci pump vaπable speed tuibo pump combination During recovei y after the venting of the chamber 501 , internal halogen lamps provide bake-out capability Piocess plasma is also used to uise the ternpei ature of the module interior assisting the bake out In this way pressures of 10 ton oi low α ai c achiev ed ithin scv α il houi s aftei a tvpical tai get change pi occdiu e The chamber has external watci cooling channels foi cooling duπng normal operation A flange is piovided 5 foi mounting of the soui ce hoist The chambci is locally sti ffened ai ound this flange by the addition of external welded ribs to support the loads exerted when the souice is laiscd by the hoist A housing for the DC connector 162 tor the soui ce is also mounted on the chambci The gas systems for modules with and without reactive gas are shown in the schematic diagrams of Fig. 21 Dehv ei y of argon gas to the chambci is via a simple flange Reactive gas, if used passes into a branched spidei l o tube 1 3 . w hich caiπes it into the piocess space I he tubes end in two positions on opposite sides of the table assembly Small covers 1 34 rest on the ends of the gas tubes to pi evcnt deposition of sputtered material on the gas tubes A sputter shield assembly 493 is piovided as illustiatcd in Fig. 22 These aic among five shields that aie subject to removal and cleaning These arc the Faraday and dai k space shields dcscπbcd above the table shields descπbed above, and two chamber shields 136 137 These chamber shields arc supported on an armature 138 Upper shield 136 which 15 typically rises to a higher temperature than lower shield 1 37 is supported at three points on the pegs 139 rising from the armature Features 140 on the shield 138 rest on these pegs centering the shield in the chamber but allowing radial motion This avoids the buildup of stresses in the shield due to thermal expansion and deposition of hot material with subsequent differential thermal expansion Such sti esses can lead to particles being released into the system The shield requires no tools to remove it The low er shield 1 37 is inserted into the armature 138 and is supported by it Self 0 centering bchavioi arises from the chamtα 141 in the armatuic No tools are required to remove the shield Pumping of the space w ithin the shields should be undci control throughout the life of a sputtci target i cgai dlcss of the histoiy of depositions in the chambci that is pumping should be at the same rate rcgaidlcss of the numbci of vvafeis coated In most sputtei ing systems this is not w ell control led Pumping in these systems may occui through gaps whose dimensions change w ith chamber tcmpeutuic oi through holes in the shields provided tor other purposes This may lead ^ to pi ocess issues p ii tie ul il l v in the c isc ot i cacti v c sputtci in _. 1 his design av oids these problems because the gap is set by the length of the pegs 1 39 These ai c short and outside the l egion of highest heat load and so are not significantly altci cd in length bv thermal expansion As a icsult the gap betw een the shields 1 36 I 37 is w ell control led and pumping occuis all around the cncumfeicnce of the process i cgion a controlled way The height of shield 136 controls the gap betw een the soui ce dai k space shield and the shield I 36 This gap is designed to be smal l preferably of the ordei of one 0 millimeter to reduce the passage of metal through the gap The shield 136 fits in a recess in the dark space shield forming a convoluted path that intercepts metal that enters the gap between the shields before the unprotected regions of the chamber are l eached Good dimensional specification is necessary to achieve this as is attention to the thermal expansion of the parts The w afci is loaded through a slot 146 m the low ci shield 1 37 Duπng processing this slot 146 is closed off by 5 the table shield 103 oi 106 The slot 146 may also hav e i suπ ound 147 to mtei ccpt sputtci cd metal moi e efficiently The soui ce hoist 460 is illusti itcd in T ig 23 The soui ce hoist 460 is a pneumatic lift capable of uising a weight of about 200 pounds It is i cquii cd to li ft the soui ce off the chambci it must then rotate about a vertical axis Thα c must also be a motion allowing the soui ce to be turned ov ei toi ta et l emoval The soui ce must be lowered foi casiei access to the tai get C onsidcublc πgidity of the assembl y is i cqim ed in oi dci that the soui ce be maintained lev el w hen lifted 0 ott the lop of the w all ι02 ot the chambci ι0 l In the aπ angement used thci c is a fixed v ertical shaft 170 that can les an upper and lower assembly 171 , 172, respectively. Both of these items contain linear bearings which can slide and rotate on shaft 1 70 A pneumatic cylinder 1 73 allows the raising and lowering of the source. Item 1 71 is intended to move vertically and also to rotate while item 1 72 rotates only, being kept aligned with item 1 71 by the cylinder. Rol lers 174 act as bearings on which the upper assembly 1 72 rotates. There are recessed features 174 into which these rollers can drop. This prov ides some i csistancc to the rotation of the assembly at certain points, al low ing the opcraloi to detect the coiTect positions for operation. Assembly 176 contains a pair of opposed angular bearings. Shaft 1 77 passes through these and is retained by a cap 178 and a spπng washer I 79 that pre-loads the bearings. This arrangement leads to a rotational joint with very high radial rigidity The assembly 1 76 also contains a cam wheel feature that, in conjunction with a plunger 1 80, ensures that the source can only be rotated in one direction and can be locked m its upright and inverted oπentations. The hoist mounts to the source using the flange 181 . Preferred process parameters for the deposition of " tantalum and tantalum nitride in one module 500 and then deposition of copper m another module 500 of the same cluster tool are as follows: Those skilled in the art will appreciate that the implementation of ' the present invention herein can be varied, and that the invention is described in preferred embodiments. Accordingly, additions and modi fications can be made without departing from the principles and intentions of the inv ention

Claims: What is claimed is 1. An ionized physical vapoi deposition appaiatus comprising a vacuum chamber having a chamber wall surrounding a vacuum processing space inside of the chamber, the chamber wall having an opening therein at one end of the chamber, an IPVD souice assembly situated m and toiming a vacuum tight closuic of the opening in the chambci wall, a gas supply system connected to the chambci so as to supply a gas into the processing space, a vacuum system connected to the chambci and operative lo maintain gas in the processing space at a vacuum pressure level, an RF energy souice outside of the ehambei, the IPVD souice assembly including a ring-shaped coating matcπal source trom which coating material is supplied to the processing space, the nng-shapcd source having an open ccntα and al least one surface in communication with the vacuum processing space, a window assembly including a diclcctnc window situated at the open center of the πng-shaped souice and toiming part of a vacuum tight enclosuie with the chamber wall and having a chamber side and an outside, and a coil outside of the chamber at said one end of the chamber adjacent and on the outside of the dielectric window and connected to the RF energy source so as to inductively couple energy from the RF energy source, when energized thereby, through the window and into the processing space to sustain an inductively coupled plasma in the processing space that is sufficiently dense to ionize coating mateπal from the nng-shapcd source m the processing space, a substute support inside ot the chambci opposite the processing space from the nng-shapcd coating matcπal souice and hdv ing a watei supporting sui lace ihcicon lacing the processing space 2. The appaiatus of claim 1 whcicin the nng-shapcd coating mateiial souice includes a tiuneated conical sputteiing target having a back suitace, a tiuneated conical tiont sputteiing suitace m the chambci lacing the processing space, an innci πm and an outci urn closci to the plane of the wafci supporting s i face of the substute support than the inner nm 3. The appaiatus of claim 2 whciem the sputteiing taiget has an outside diameter laigci than that of the wafci supporting suitace of the substute support 4. The apparatus of claim 2 herein the IPVD souice assembly further includes a truncated conical permanent magnet assembly adjacent the back surface of the target and configured to produce a sputtering-plasma-confinmg magnetic field adjacent the front sui face of the target 5. The appaiatus of claim 2 wheicin having a cone divergence of approximately 110° 6. The appaiatus of claim 2 wheicin the sputteiing tamet toims part ot a vacuum tight enelosuic with the ehambei wall with the back sui face thαeot out of contact with the processing space 7. The apparatus of claim 6 wherein the I PVD source assembly further includes vacuum tight sealing means between the sputtering target and the chamber w all and between the sputtering target and the window. 8. The apparatus of claim 1 further comprising: a replaceable thin metal chamber shield between the processing space and the wall of the chamber, the chamber shield including: a general ly cylindrical portion surrounding the processing space and supported on elongated supports at a plurality of points remote from exposure to heat from the processing space, and an annular end portion surrounding the substiatc support and overlapping but not contacting the cylindrical portion to protect the wall of the chamber from coating material deposits in the vicinity thereof and to prevent sliding contact between said portions due to thermal expansion of one of the portions; and the I PVD source assembly including an annular dai k space shield surrounding the a ring-shaped coating mateπal source and bang spaced from and in close overlapping proximity to the cylindrical portion of ' the chamber shield so as to protect the wall of the chambci h om coating matei ial deposits in the vicinity thereof 9. The apparatus of claim 1 wherein: means between the window and the processing space for physically shielding the inside of the window from the deposit thereon of electrically conductive coating matcπal and maintaining effective inductive coupling of the RF energy from the coil into the processing space. 10. The apparatus of any of claims 1 through 9 wherein: the coil is a thiee-di ensional RF coil configured such that magnetic field lines extending through turns thereof predominantly arch through the diclcctnc w indow and the processing space 1 1. The apparatus of any of claims 1 through 9 wherein the I PVD source assembly further includes: a window shield inside of ' the chambci paiallcl and in close proximity to the dielectπc window and configui cd to substantial ly shield the w indow from depositions of coaling matcπal and to permit substantial inductive coupling of the RF energy from the coil, through the window and shield and into the processing space. 12. The apparatus of claim 1 1 vv herein ■ the window shield is an electrically conductiv e Faraday shield having the plurality of non-conductive features therein configured in relation to the coil so as to permit substantial inductive coupling of the RF energy from the coil, through the window and shield and into the processing space while preventing substantial capaeitive coupling of " RF energy from the coil into the chamber 13. The apparatus of claim 1 1 wherein: the window shield has a plurality of chcvi on-shaped slots therein configured relation to the coil to permit substantial inductiv e coupling of RF energy from the coi l, through the window and shield and into the chamber w ithout prov iding a line-of-sight path thi ugh the slots toi the motion of coating mateπal from the chamber onto the w indow 14. The appaiatus of claim 11 wheiein the window shield has a plurality of slots therein and is spaced from the window and has the slots dimensioned to facilitate the formation of plasma between the slots and the window that will clean material deposited at the slots onto the window 15. The apparatus of claim 11 wherein the window shield is toπned ot cast metal and has cooling fluid passages integial thereto 16. The appaiatus of any of claims 1 through 9 wheicin the gas and/oi vacuum systems include a picssuic controllα configured to maintain vacuum picssuic in the chambci sufficiently high so that ions in the plasma essentially thermalize in the processing space so that the distnbution, enemy and directionality thcicof onto a wafci on the vvdfα supporting surtdce of the support dre predominantly due to the electπc field across a plasma sheath between the high-density plasma and the wafer 17. The appaiatus of claim 16 wherein the gas supply and prcssuie control system including means for maintaining the pressuie within the vacuum chamber during deposition of the material at a pressure of at least 30 tnTorr 18. The apparatus of claim 16 wherein the gas supply and pressure control system including means for maintaining the pressure within the vacuum chamber during deposition of the mateπal at a pressure between 30 mTorr and 130 mTorr 1 . The apparatus of any of claims 1 through 9 wherein the target is spaced from the wafer support a distance of from 6 to 9 inches 20. I he appaiatus of any ol claims 1 through 9 heicin the IPVD souice assembly furthα includes a spacci ot high diclcctnc mateiial between the coil and the indow 21. I he appaiatus ot claim 20 wheicin the spacci is toimed ot a plastic matcπal such as TEFLON and substantially fills the space between the coil and the diclcctnc indow 22. The appaiatus of any of claims 1 through 9 whciem the substute support is moveably mounted to the ehambei wall and positionablc iclativc to the target ova a distance of from 6 to 9 inches 23. The appaiatus ot any of claims 1 thiough 9 wherein the substrate support includes an electrostatic chuck to hold a wafer substrate in the wafer support plane for processing, the electrostatic chuck including a bipolai gπd and multiple zone vvafei biasing system connected to the bipolar grid 24. The appaiatus ol any ol claims 1 through 9 tuithci compπsing one oi moie ot heating and cooling means in the wafer support. back side gas conduction means between the wafer support surface and a wafer supported thereon in the wafer support plane, a non-contact shadow ring overlying the peripheral edge of a substrate on the wafer support. 25. The apparatus of claim 1 wherein: the vacuum chamber has the opening at the top thereof; and the IPVD source assembly includes: a housing assembly having: an external ground connector, an external target power connector, an RF power source connector, external cooling fluid rccn dilating ports, an internal target power terminal, at least two internal RF connectors, a plurality of internal cooling fluid ports, and electrically non-conductive support structure; the RF coi l assembly removably secured to the housing and wherein the coil is a three-dimensional coil removably connected across the internal RF connectors, and the coil has a cooling passage therethrough removably connected across at least two of the internal cooling fluid ports; an annular permanent magnet assembly removably secured to the housing and surrounding the RF coil assembly; the window assembly removably secured to either the housing or the coil assembly; the ring-shaped coating material source including an annular target assembly removably connected to the housing and having means for forming a vacuum tight seal with the window when so connected, the target assembly including an annular expendable sputtering target and means forming a liquid tight cooling passage for the target that is removably connected across at least tw o of ' the internal cooling ports, the target assembly having an electrical conncctoi remov ably connected to the internal tai get po ei terminal of the housing; and means for forming a v acuum tight seal between the target assembly and the wal l of a vacuum processing chamber when the IPVD source assembly is connected thereto 26. An IPVD source assembly for supplying and ionizing mateπal for coating a semiconductor wafer, the assembly comprising: a housing assembly having: an external ground connector, an external target power connector, an RF power source connector, external cooling fluid recirculating ports, an internal target power terminal, at least two internal RF connectors, a pl urality of internal cooling fluid ports, and electrically non-conductiv e support structure, an RF coi l assembly removably secui ed to the housiim and including' a three-dimensional coil removably connected across the internal RF connectors, and the coil having a cooling passage therethrough removably connected across at least two of the internal cooling fluid ports; an annular permanent magnet assembly removably secured to the housing and surrounding the RF coil assembly; a window assembly removably secured to the to either the housing or the coil assembly, the window assembly including a substantially flat dielectπc window; an annular target assembly removably connected to the housing and having means for forming a vacuum tight seal with the window when so connected, the target assembly including an annular expendable sputtering target and means forming a liquid tight cooling passage for the target that is removably connected across at least two of the internal cooling ports, the target assembly having an electrical connector removably connected to the internal target power terminal of the housing; and means for forming a vacuum tight seal between the target assembly and the wal l of a vacuum processing chamber when the I PVD source assembly is connected thereto. 27. The assembly of claim 25 or claim 26 wherein: the means forming the liquid tight cooling passage of the target assembly includes a target backside cover detachable from the target and defining the liquid tight cooling passage between it and the target. 28. The assembly of claim 27 wherein: the target assembly includes replaceable cooling liquid flow control means mounted in the liquid tight cooling passage to permit the varying of the flow of cooling liquid therethrough. 29. The assembly of claim 25 or claim 26 w herein: the RF coil assembly includes a high dielectric spacer secured to the coil and extending from the coil to the window 30. The assembly of claim 25 or claim 26 herein the w indow assembly includes an electrically conductiv e shield having a plurality of electrically non-conductive features thci cin and connected to the dielectric indow , the shield being electrical ly grounded or otherwise electrical ly connected to the housing and having cooling passages therethrough removably connected across at least two of the internal cooling ports 31. The assembly of claim 30 wherein- the electrically conductive shield is a slotted Faraday shield having the plurality of non-conductive features therein configured in relation to the coil so as to permit substantial inductive coupling of the RF energy from the coil, through the window and shield while preventing substantial capaeitive coupling of RF energy from the coil through the window and shield. 32. The assembly of claim 30 wherein the electrically conductive shield connected to the dielectπc window so as to be removable from the housing thαcwith 33. The assembly of claim 30 wherein the window assembly includes means toi maintaining the shield spaced a close distance from the window 34. The assembly of claim 30 wheicin the target power connector is a DC conncctoi to a DC power source, and the target is a metallic target 35. The assembly of claim 25 oi claim 26 whciem the vacuum tight seal toiming means between the taiget assembly and the wall of a vacuum processing chamber includes an annulai flange removably connected to the housing and having means theicon for forming a seal with the target assembly when connected to the housing and means toi forming a vacuum tight seal with the wall of the vacuum processing chamber when the IPVD souice assembly is installed on a processing ehambei 36. The assembly of claim 35 wherein the annular flange contains means effective to connect the IPVD souice assembly to the wall of a processing chamber having an source opening in the top thereof when supported on the wall around the opening by gravity and by atmosphcπc picssuic when a vacuum is affected within the chambci 37. The assembly of claim 25 oi claim 26 whciem the external ground conncctoi of the housing assembly includes d positive DC feed connected to the souice housing and conncctablc to a ground connection on a processing appaiatus the external taiget powei conncctoi includes a negative DC povvci conncctoi mounted to the housing assembly and positioned lo connect lo a negative tcim al conncctoi on the wall of a processing ehambei when the IPVD souice assembly is mounted on the chambci wall ot a processing appaiatus, the internal taiget povvci tcπmnal includes a negative DC feed fixed to the housing assembly and insulated from ground the RF power souice connector includes an RF tuner mounted on the source housing, having RF leads connectable to an RF povvci souice, and having the internal RF connectors connected thereto, the housing assembly has intcilock switch means theicon for conditioning the application of RF power and cooling water to the coil on proper connection of the coil and has turthei intcilock means theicon for conditioning the application of DC powei and cooling watci to the taiget assembly on the piopα connection of the target assembly, the taiget assembly is a fiusto conical img shaped taiget assembly that includes a frusto conical sputtering target a taiget back side covci configured to form a watei tight seal with the fiusto conical taiget to enclose the cooling liquid passage between the covci and the taiget and bavonet connecting stiucttitc around a peπmctcr of the cover and target foi connecting the taiget to and icmov ing it from the covei bv a rotary motion the window assembly includes an electrically conductive shield having a plurality chevron-shaped slots therein configui ed to pi cvcnt a hne-of-sighi path through the slots for the motion of coating mateπal from the chamber onto the window, the shield being connected to and spaced from the window and the slots dimensioned to facilitate the formation of plasma between the slots and the window that will clean material deposited at the slots onto the window; and the coil assembly including an electrically conductive enclosure surrounding the coil so as to provide a barrier to RF emissions from the coil to the outer side of the window outside of the enclosure, the enclosure having openings therethrough for the cooling fluid ports and the RF terminals of the coil. 38. The assembly of claim 35 further comprising: a plurality of hand operable fasteners securing the annular flange to the housing and releasably securing the target assembly to the I PVD source. 39. A replaceable chamber shield for a physical v apor deposition apparatus comprising: a generally cylindrical thin metal portion configured to surround a processing space in a vacuum processing chambci and to be supported on a plurality ot at least three elongated supports cireumferentially spaced at a plurality ot points around the chamber that are remote from exposure to heat from the processing space, and an annular end portion configured to surround a substrate support in the chamber and overlapping but not contacting the cylindrical portion to protect the all of the chamber from coating material deposits in the vicinity thereof and to avoid sliding contact between said portions due to thermal expansion of one of the portions. 40. A ring-shaped coating material source comprising: a truncated conical sputtering target having: a truncated conical front sputtering surface having a cone divergence of approximately 1 10°, a central opening, an inner generally cylindrical backw ardly extending πm adjacent the central opening and having a ring seal groove therein defining an back vacuum coupling, the inner πm having a plurality of cireumferentially spaced castellated features on the outside thereof to allow the target to assemble to a cooling fluid cover and having a step on the inside thereof around the opening hav ing a v cuum scaling surface thereon, an outei gcnci ally annulai disc shaped outw ai dly extending πm having a front facing well-finished surface thereon defining a front vacuum coupling, and a back surface hav ing an inner annulai cooling fluid sealing surface proximate the inner πm, an outer annulai cooling fluid sealing sin lace proximate the outci πm and a smooth annulai cooling surface betw een the innci and outer annulai cooling fluid sealing surfaces. 41. A sputtering tai get assembly compπsmg the coating matcπal source of claim 40 and further comprising: a truncated conical cooling fluid cover configui ed to attach to the back surface of the target, the cover having a centi al opening, an inner πm ad j acent its central opening hav ing cireumferentially spaced bayonet assembly structure on the inside thereof configured to engage the castellated features on the inner πm of the target to connect the cover to the target when the target is rotated a fraction of a turn relative to the cover, an outei πm, a front sui face having an innci annulai fluid seal proximate the inner πm of the covci configured to form a cooling fluid seal against the innci annual cooling fluid sealing suitace of the taiget when the taiget is rotated relative to the cover to a tightened position, an outci annular fluid seal proximate the outer πm of the covei 5 configured to form a cooling fluid seal against the outer annual cooling fluid scaling surface of the target when the target is rotated relative to the cover to a tightened position, and an annular cooling fluid channel between the inner and outer annular seals 42. The sputtering taiget assembly of claim 41 wheicin the cover further has a pan ot cooling fluid ports thαcthtough which communicate with the channel 10 a pluiality ot grooves, each having a comb-like flow icstiiction icmovably mounted theicin and having a pluiality of flow dividing notches theicin, and a tamet povvci conncctoi extending icaiwaidlv tlicicfiom 43. A coating matcπal shield foi protecting a diclcctnc window in a semiconductor water processing appaiatus while pcimitling the coupling ot RT eneigy theielhiough, the shield eompπsing I 5 a flat ciicular metal disc having a front side a back side, an annular run portion having a cooling fluid passage enclosed therein and a plurality of cooling fluid ports on the back side thereof communicating with the cooling fluid passage, and a eirculai flat cential portion having a pluiality of paullel slots therethrough hav g cooling fluid passages enclosed therein communicating with the cooling fluid passage in the πm 44. The shield of claim 43 wheicin the slots aic chcvi on-shaped in cross-section 0 45. The shield of claim 43 whciem the disc is toimed ot coppei having an aluminum plated sui lace 46. A diclcctnc window assembly loi coupling Rl enemy theiethiough lo a scmiconductoi watci processing appaiatus compπsing the shield of claim 43 and luiihei compπsmg a flat ciieulai diclcctnc window having a pluulitv of holes theiethiough, the window being connected to the shield on stiuctuic extending from the shield that delincs the fluid ports thcieof, the window being spaced from the shield 5 and oπentcd paullel to the shield, the window tuithei having an annulai vacuum scaling surface around the edge thcieof on the side thcieof opposite the shield 47. \n ionized phy ical vapoi deposition method eompπsing the steps ot maintaining a vacuum chambci to a picssuic of hom 50 to 120 mToπ, from a img of coating matcπal selected from the group consisting ot coppei oi tantalum, at one end ot a 0 processing space in a vacuum processing chambci icleasing particles of the mateiial into the processing space, inductively coupling RF eneigy from a coil outside the chambci into the processing space through an opening in the coating material at the centci of the img of coating matcπal, with the coupled RF energy, forming an inductively coupled plasma in the processing space that is sufficiently dense to thermahzed ionize a substantial fraction of ' the coating material in the processing space, electrically directing positiv e ions of the coating mateπal from the plasma toward and onto the substrate. 48. A method of sci v icing an I PVD apparatus comprising the steps of- 5 providing a downwardly facing I PVD source assembly covering an opening on the top of a vacuum processing chamber having: a housing assembly having target power, RF power and cooling fluid connectors, an RF coil assembly removably secured to the housing and connected to the RF power connectors and cooling fluid connectors, 10 an annular permanent magnet assembly removably secured to the housing and surrounding the RF coil assembly; a window assembly removably secured to the to cither the housing or the coil assembly, the window assembly including a substantially flat dielectric w indow and an electrically conductive shield having a plurality of electrical ly non-conductive features therein and connected to the dielectric window, the shield being electπcally I 5 grounded or otherwise electrically connected to the housing and having cooling passages therethrough removably connected to the cooling fluid connectors of ' the housing, the shield being configured in relation to the coil so as to permit substantial inductive coupling of ' the RF energy from the coil, through the window and shield and being connected to the dielectric window so as to be i cmov able from the housing therewith, an annular target assembly removably connected to the housing and having means for forming a vacuum 0 tight seal with the window w hen so connected, the target assembly including an annular expendable sputteπng target and means forming a liquid tight cooling passage foi the target that is removably connected across at least two of the internal cooling ports, the target assembly being removably electπcally connected to the target power connectors of ' the housing and to the cooling fluid connectors of the housing, and an annular flange fastened to the housing and including means for forming a vacuum tight seal between 5 the target assembly and the wall of a vacuum processing chamber when the IPVD source assembly is supported thereon; unsealing the I PVD soui ce assembly from the top of the wall of ' the chamber and lifting the I PVD source assembly from the top of the wall of the chamber; inv erting the orientation of the I PVD soui ce assembly so that it is upw ardly facing, 0 unfastening the flange by hand from the source housing to release and remove the flange and the target assembly; replacing the tai get in the tai get assembly . rcf ' astcning the flange by hand to the soui ce housing and thereby securing the flange and the target assembly to the I PV D soui ce assembly; 5 inverting the I PVD source assembly until dow nw ai dly facing; lowering the I PVD source assembly onto the top of the wall of the chamber. 49. The method of claim 48 further comprising the step of aftei lemoving the taiget assembly and bcfoic icplacmg the taiget assembly, removing the window assembly and removing therefrom and replacing the shield then lcinstalhng the window assembly 50. The method of claim 48 wheicin the shield is foimcd of coppei and has a plated sui lace, the method further compπscs the step of aftα icmov g the taiget assembly and betoie icplacmg the taiget assembly, rcmov ing the window assembly and icmoving the shield theictiom, icconditioning the shield oi hom a snmlai shield piev lously lemoved hom an IPV D souice by dissolving the plated surface from shield and theicby lemoving deposits from the shield then rcplating the suitace of the shield and installing the icconditioned shield in the window assembly, then reinstalling the window assembly in the IPVD source 51. The method of claim 48 furthci compπsmg the step ot aftci removing the target assembly and bcfoic icplacmg the taiget window assembly, removing and replacing the magnet assembly with one of a diffeient configu tion 52. The method of claim 48 further compπsing the step of after removing the window assembly and before replacing the window assembly, removing sα vicing remaining components of the IPVD souice assembly 53. A method of shielding a diclcctnc window of an IPVD appaiatus compπsing the steps of providing in an IPVD souice ol an IPVD processing apparatus, a ciieulai metal shield having acucularπm and a plurality of slots thiough a cential aica thcieof sunoundcd bv the πm, the shield having cooling fluid passages theicin and ports toi connecting the cooling passages to an exteinal i ecu dilating souice of cooling fluid, the shield having a plated sui lace of a matcπal that ditfcis hom said metal icmoving the shield hom the IPVD source aftci icmoving the shield icconditioning the shield bv dissolving the plated sin face from shield and thereby icmoving deposits from the shield then lcplating the sui lace of the shield, then installing the icconditioned shield in an IPVD souice of an IPVD processing apparatus

Inventors: BRCKA JOZEF, CERIO FRANK MICHAEL JR, DREWERY JOHN STEPHEN, GITTELMAN BRUCE DAVID, GRAPPERHAUS MICHAEL JAMES, REYNOLDS GLYN, RUSSELL DERREK ANDREW, VUKOVIC MIRKO, BRCKA, JOZEF, CERIO, FRANK, MICHAEL, JR., DREWERY, JOHN, STEPHEN, GITTELMAN, BRUCE, DAVID, GRAPPERHAUS, MICHAEL, JAMES, REYNOLDS, GLYN, RUSSELL, DERREK, ANDREW, VUKOVIC, MIRKO
Applicants: BRCKA JOZEF, CERIO FRANK MICHAEL JR, DREWERY JOHN STEPHEN, GITTELMAN BRUCE DAVID, GRAPPERHAUS MICHAEL JAMES, REYNOLDS GLYN, RUSSELL DERREK ANDREW, TOKYO ELECTRON ARIZONA INC, TOKYO ELECTRON LTD, VUKOVIC MIRKO, BRCKA, JOZEF, CERIO, FRANK, MICHAEL, JR., DREWERY, JOHN, STEPHEN, GITTELMAN, BRUCE, DAVID, GRAPPERHAUS, MICHAEL, JAMES, REYNOLDS, GLYN, RUSSELL, DERREK, ANDREW, TOKYO ELECTRON ARIZONA, INC., TOKYO ELECTRON LIMITED, VUKOVIC, MIRKO
Application year: 2000
Main classification: H01J37
IPC codes: C23C14, H01J37, H05H1