Thin film forming method and apparatus

Abstract: [Object] To provide a thin film forming method and apparatus that can automatically form thin films having constant optical properties with high reproducibility [Means for solution] Antireflection films are deposited on lenses 2a that are held by a coating dome 2 by vaporizing an evaporation material 4 by using an electron gun 3. The power to be applied to the electron gun 3 is controlled so that a transmission or reflection light quantity value that is measured at each time point by an optical film thickness meter 10 becomes equal or approximately equal to a standard light quantity value stored in a standard light quantity value data storing means.

Description: Technical Field of the Invention The present invention relates to a thin film forming method according to claim 1 and also to a thin film forming apparatus according to claim 10. Related Prior Art From US-A-4,915,476 a process is known for forming a single-notch optical filter having a continually and accurately varying periodic profile. An optical medium is coated on a uniform substrate where the homogeneous optical medium produces a rugate filter, so that the profile of the refractive index follows a sinusoidal pattern and Braggs' law. As the optical medium is coated on the substrate, the depositing film is monitored by optical techniques, and feedback information is provided to a computer driven by a pre-programmed process control algorithm so that real time control of the manufacturing process may be accomplished. In formation of thin films on the surfaces of plastic or glass members, it is desirable to form thin films having the same quality fully automatically with high reproducibility. As an attempt to satisfy the above requirement, Japanese Unexamined Patent Publication No. Hei. 3-50501 discloses a method and apparatus in which the value of current supplied to an electron gun is monitored, the current value is compared with preset reference data, and when a deviation occurs between them the value of current to be supplied to the electron gun is corrected and controlled in accordance with the deviation. Further, Japanese Unexamined Patent Publication No. Sho. 61-147874 discloses a method and apparatus in which the thickness of an evaporated film is detected by a quartz oscillator method and the value of current to be supplied to an electron gun is corrected and controlled. In the quartz oscillator method, a film thickness is calculated by sticking a thin film to a quartz oscillator and detecting a variation of the inherent frequency that is proportional to a variation of its mass. Still further, Japanese Unexamined Patent Publication No. Hei. 7-180055 discloses a control method in which the time necessary for film formation is managed so as to be equal to a target time necessary for film formation by correcting a current value of an evaporation source by using a quartz film thickness meter and the evaporation rate is thereby made constant. Problems that the invention is to solve In the methods disclosed in Japanese Patent Publication Nos. Hei. 3-50501 and Hei. 7-180055, it is difficult to cope with a phenomenon that the degree of evaporation of an evaporation substance varies as the film forming apparatus is used repeatedly. In particular, for thin films for optical products such as an antireflection film for a lens for glasses (in optical products, tolerances of errors relating to the quality of a thin film are small), these methods are not suitable to form thin films having the same quality fully automatically with high reproducibility. This is because in the methods disclosed in Japanese Patent Publication Nos. Hei. 3-50501 and Hei. 7-180055, even if the current value of the electron gun is controlled as correctly as possible, a thin film formed may be much different from an intended one when any of the state of the filament of the electron gun, the substrate temperature, the vacuum conditions, etc. differs from a set condition. The methods disclosed in Japanese Patent Publication Nos. Sho. 61-147874 and Hei. 7-180055 in which the value of current supplied to the electron gun is corrected and controlled by using the quartz oscillator have the following problems. In the quartz oscillator method, the measurement physical quantity is a variation of frequency that is caused by a variation of the mass of a film that is stuck to the quartz oscillator. Therefore, the quantity that is measured through the frequency is the mass of a film and not the optical film thickness. The optical film thickness is determined by the product of the geometrical thickness and the refractive index of a film and is not uniquely determined by the mass. As described above, the quartz oscillator method measures the mass that is not in a unique relationship with the optical film thickness. Therefore, to determine an optical film thickness from a mass value, it is necessary to make a calculation by determining a proper conversion coefficient according to empirical rules. However, since such a conversion coefficient depends on various conditions such as film formation conditions, a difference in such conditions directly leads to a conversion error. Therefore, not only is it difficult to determine a proper conversion coefficient but also in principle there are no large differences between the methods concerned and the above methods in which the current of the electron gun is controlled. In addition, the methods concerned are very easily affected by electrical noise because a quartz oscillator is disposed in a film forming chamber, the same film as an intended film is formed thereon, and the frequency of the quartz oscillator is measured electrically as a faint electrical signal. However, as many noise sources exist in the film forming chamber as it is no exaggeration to say that it is filled with electrical noise sources. Therefore, there is another problem that in reality it is not necessarily easy to detect a signal by eliminating those noises. The present invention has been made to solve the above problems, and an object of the invention is to provide a thin film forming method and apparatus that can automatically form thin films having constant optical properties with high reproducibility by controlling, during a film forming process, the amount of film forming material to fly so that the measurement value that uniquely depends on the optical film thickness that varies every moment becomes a standard measurement value. Summary of the Invention As a means for solving the above problems, the inventors have provided a thin film forming method according to claim 1 for performing film formation by causing a film forming material to fly and depositing it on a surface of a subject of film formation. The inventors have also provided a thin film forming apparatus according to claim 10. Brief Description of the Drawings Fig. 1 shows a configuration of a thin film forming apparatus according to an embodiment of the present invention; Fig. 2 shows how the reflection light quantity varies as a thin film is formed on a glass surface through evaporation; Fig. 3 shows a region of an extension amount that is used for control; Fig. 4 shows graphical representations of a variation of the actual light quantity and a variation of the standard light quantity; Fig. 5 is a table showing an example in which film formation was performed by using an evaporation material AN2; and Fig. 6 is a table showing an example in which film formation was performed by using an evaporation material AN3. Fig. 1 shows the configuration of a thin film forming apparatus according to an embodiment of the present invention. The embodiment will be hereinafter described with reference to Fig. 1. Note that in this embodiment, the invention is applied to a case of forming antireflection films as thin films on plastic lenses for glasses that are subjects of film formation. As shown in Fig. 1, inside a vacuum chamber 1 as a film forming chamber, a coating dome 2 is disposed at a top position and an electron gun 3, a crucible 4, a shutter 5, etc. are disposed at bottom positions. A substrate thermometer 6 for measuring the temperature of lenses 2a that are subjects of film formation held by the coating dome 2 is disposed in the vicinity of the coating dome 2. The vacuum chamber 1 is provided with a vacuum gauge 7 for measuring the degree of vacuum in the vacuum chamber 1, an evacuation unit 8 for evacuating the vacuum chamber 1, and a halogen heater 9 for heating the lenses 2a that are held by the coating dome 2. Further, an optical film thickness meter 10 is disposed outside, that is, on top of, the vacuum chamber 1. The optical film thickness meter 10 is connected to a controller 12 via a film thickness monitor 11. A standard light quantity value data storing means 13 and an input means 12a are connected to the controller 12. Further, the electron gun 3, the shutter 5, the substrate thermometer 6, the vacuum gauge 7, the evacuation unit 8, and the halogen heater 9 are electrically connected to the controller 12. The controller 12 performs various kinds of control while exchanging information with those devices. That is, the controller 12 controls the evacuation unit 8 based on information of the vacuum gauge 7 and thereby sets the degree of vacuum in the vacuum chamber 1 at a prescribed value. The controller 12 controls the halogen heater 9 based on information of the substrate thermometer 6 and thereby sets the temperature of the lenses 2a as the subjects of film formation at a prescribed value. The controller 12 controls power (current and/or voltage) to be applied to the electron gun 3 so that the light quantity at each time point that varies depending on the optical film thickness at each time point of a thin film formed on a monitoring glass plate 2b that is measured by the optical film thickness meter 10 becomes equal to a value stored in the standard light quantity value data storing means. The coating dome 2 is a holding means for holding the lenses 2a as the subjects of film formation so that antireflection films or the like as thin films are evaporated on the respective lenses 2a. The coating dome 2 has a circular shape so that evaporation can be performed on a plurality of lenses 2a at the same time. The coating dome has such curvature that antireflection films having the same quality or similar quality are formed on all lenses. The electron gun 3 serves to vaporize an evaporation substance (material) 4a that is accommodated in the crucible 4 by heating it to its melting temperature, and thereby evaporate and deposit it on the lenses 2a and the monitoring glass plate 2b to form thin films thereon. The crucible 4 is a known container that is used for holding the evaporation substance 4a therein. To prevent a sudden boil of the evaporation substance when it is heated with the electron gun 3, the crucible 4 is cooled or is preferably made of a substance having low thermal conductivity. The shutter 5 is opened when evaporation is started and is closed when evaporation is finished. The shutter 5 serves to facilitate control of thin films. The halogen heater 9 is a heating means for heating the lenses 2a to suitable temperature to make proper the properties such as adhesiveness of thin films that are evaporated on the lenses 2a. The optical film thickness meter 10 utilizes a phenomenon that when light is applied to a transparent substrate with a transparent thin film formed on its surface, light reflected by the surface of the thin film and light reflected by the surface of the transparent substrate interfere with each other due to a phase difference between them. That is, the phase difference and hence the state of interference vary with the optical film thickness of the thin film, whereby the light quantity of the reflection light varies depending on the optical film thickness. When the reflection light varies, the transmission light also variesinvitablly. Therefore, a similar operation can be performed by measuring the light quantity of the transmission light. The following description will be directed to the case of using reflection light. Fig. 2 shows how the reflection light quantity varies as a thin film is formed on a glass surface through evaporation. In the figure, the vertical axis represents the light quantity (relative value; unit: %) and the horizontal axis represents the evaporation time. Where the film to be evaporated is thick, the light quantity repeatedly increases and decreases in a periodic manner as the optical film thickness increases. By using a variation of the light quantity that uniquely corresponds to the optical film thickness, the optical film thickness can uniquely measured and/or controlled. In this case, the difference between the maximum value and the minimum value in each cycle is called an extension amount. In general, extension amounts l1, l2, l3, ... do not always coincide with each other. Considering the fact that extension amounts l1, l2, l3, ... do not always coincide with each other, it is possible to use part of the overall extension amount rather than the overall extension amount. Fig. 3 shows a region of an extension amount that is used for control. As shown in Fig. 3, where the minimum value and the maximum value of the light quantity value are 20% and 70%, respectively, and hence the extension amount is 50%, control is performed without using top and bottom 5% regions, that is, by using a region where the light quantity value is 25-65%. In this embodiment, the optical film thickness meter 10 applies light to the monitoring glass plate 2b that is held at the center of the coating dome 2 and measures light that is reflected from the monitoring glass plate 2b. Since a thin film formed on the monitoring glass plate 2b is considered the same as thin films formed on the respective lenses 2a, the same information as would be obtained from the thin films formed on the respective lenses 2a can be obtained in this manner. The controller 12 controls the power (current and/or voltage) that is applied to the electron gun 3 so that a light quantity value at each time point that is measured from a thin film formed on the monitoring glass plate 2b by the optical film thickness meter 10 becomes equal to a light quantity value stored in the standard light quantity value data storing means. A thin film forming method according to the embodiment will be hereinafter described in a more specific manner. First, lenses 2a as subjects of film formation and a monitoring glass plate 2b are set on the coating dome 2 and an evaporation material 4a is set in the crucible 4. Then, the degree of vacuum in the vacuum chamber 1 is set at a prescribed value and the temperature of the lenses 2a are set at a prescribed value by using the halogen heater 9. Then, evaporation is started by starting control of power that is applied to the electron gun 3. Formation of an evaporation film is started after opening of the shutter 5. Therefore, a time point when the shutter is opened is employed as time 0 and the time that elapses thereafter is represented by t (sec). In general, after the shutter 5 is opened, the light quantity measured by the optical film thickness meter 10 starts to vary. However, in reality, sometimes the light quantity starts to vary with a delay. In this case, control can be started by forcibly applying prescribed power to the electron gun 3 after a lapse of a prescribed time. First, standard film formation is performed by setting various conditions such as the electron gun power (current value) to conditions under which the best film formation could be performed. In short, this standard film formation is film formation in which desired antireflection films are formed resultantly. Therefore, where various conditions of the apparatus are proper, there may occur a case that the only control necessary is to make the application power to the electron gun constant. There may occur another case that the standard film formation is such that film formation is performed while various conditions are controlled according to experiences and intuition of a skilled person. In the standard film formation, the light quantity 1 (%) of the optical film thickness meter with respect to the time t (sec) in the film formation process is recorded at sampling intervals Tsmp, whereby light quantity value data in the form of pairs of time and a light quantity are generated. The light quantity value data are stored in the standard light quantity value storing means 13 as standard light quantity value data. From the next film formation onward, while a software-based control is performed by a computer, the standard light quantity value data that are stored in the standard light quantity value data storing means 13 are called and compared with an actual measurement light quantity value and the current value of the electron gun 3 is adjusted so that the two light quantity values coincide with each other. The control of the current value of the electron gun is performed in the following manner. First, a light quantity ((actual measurement value) = (actual light quantity)) at a time point t i-1 (real time point) as measured from the opening of the shutter is represented by l i-1 and the standard data are searched for a standard light quantity ls (= l i-1 ) that is equal to l i-1 , where i means an ith control operation. If there is no equal value, an approximate value is calculated. Then, a time point ts (standard time point) corresponding to the light quantity ls is calculated based on the standard data. Then, a light quantity (actual measurement value = actual light quantity) corresponding to a time point ti that succeeds the real time point t i-1 by a control interval Δt (sec) is represented by li. Further, a standard light quantity ls' corresponding to a standard time point ts' (= ts + Δt) is obtained from the standard data. Now, Δli and Δls i are defined by Δli ≡ li - l i-1 Δls i ≡ ls' - ls. Ri is defined by Ri ≡ 1 - Δli/Δls i or Ri ≡ (ls' - li)/(ls' - ls). Fig. 4 is graphical representations a variation of the actual light quantity and a variation of the standard light quantity. Further, the following conversion is performed on Ri: Qi ≡ kRi |Ri| where k is an arbitrary constant. The electron gun power value Pi is determined at intervals by performing a PID (proportion, integration, and differentiation) control for Qi. A PID control equation for determining the electron power value Pi is as follows: Pi ≡ P i-1 + Kp·Qi + Ki·∑Qi + Kd·detQi In the above equation, Kp, Ki, and Kd are arbitrary constants and The above control is performed every control interval Δti (sec). However, the above control interval Δti (sec) is varied in accordance with the coincidence factor (Ri). In general, the control interval Δti is set larger when the degree of coincidence is higher (Ri is closer to 0). It is possible to determine the electron gun power value Pi from time to time by performing a PID (proportion, integration, and differentiation) control for Ri. Where Δlsi and Δli are close to each other, it is also possible to set a proper electron gun current value by converting Ri according to the following equation: Qi ≡ kRi |Ri| A description will be made below of examples in which single-layer films (λ/2 (λ = 500 nm) layer) were formed by using the above method and apparatus. Fig. 5 shows an example in which film formation was performed by using an evaporation material AN2, and Fig. 6 shows an example in which film formation was performed by using an evaporation material AN3. The evaporation material AN2 is made of ZrO 2 and the evaporation material AN3 is a mixture of Ta 2 O 5 , ZrO 2 , Y 2 O 3 , and Al 2 O 3 . The other conditions are as follows: Lens substrate: Thiourethane plastic lens Lens heating temperature: About 70°C Vacuum condition: 3.6-5.0 x 10 -3 Pa Optical film thickness meter: OPM-V1 (manufactured by Synchron Corp.) Evaporation apparatus: BMC-1050HP (manufactured by Synchron Corp.) The results of Figs. 5 and 6 show that in the case of AN2 differences in evaporation time are at most about 10 sec in spite of the fact that electron gun initial power values (evaporation start power values) are different from each other. Final power values are approximately constant (about 147 mA). Also, extension amounts are almost uniform. In the case of AN3, as in the case of AN2, differences in evaporation time are less than 10 sec in spite of the fact that electron gun initial power values (evaporation start power values) are different from each other. The accuracy is higher than in the case of AN2, which may be due to longer evaporation times. Final power values are in a very high degree of coincidence. Measured extension amounts and a standard extension amount are almost uniform and hence it can be said that the thin films have the same characteristics. That is, the above results show that since in the invention the current value of the electron gun is controlled with attention paid to the light quantity that is measured by the optical film thickness meter, even if another condition (the substrate temperature, the degree of vacuum, or the like) is different from a set value antireflection films having only a small variation in the antireflection characteristic can be formed without requiring any human hands. The light quantity that is measured by the optical film thickness meter is a quantity that uniquely depends on the optical film thickness of a thin film. Therefore, by performing control so that this light quantity value coincides with the standard light quantity value, even if a condition of the apparatus or some other factor varies, thin films are formed resultantly so as to satisfy a condition that optical film thickness values at each time point of film formation are the same and finally thin films having approximately the same optical performance can be obtained reliably. Advantages of the Above First Embodiment As described above in detail, in the invention, a thin film forming method in which film formation is performed by causing a film forming material to fly and be deposited on the surface of a subject of film formation is characterized by using an optical film thickness meter that measures a thickness of a thin film by utilizing a fact that a transmission or reflection light quantity that is obtained when prescribed light is applied to a subject of film formation on which the thin film is formed depends on the thickness of the thin film; and controlling, in a film forming process, an amount of a film forming material to fly so that a transmission or reflection light quantity value that is measured at each time point by the optical film thickness meter becomes equal or approximately equal to a standard light quantity value. Therefore, a thin film forming method and apparatus capable of automatically forming thin films having constant optical properties with high reproducibility are obtained. According to a second embodiment the control of the current value of the electron gun is performed in the following manner. First, a light quantity value (actual measurement value) at time ti as measured from the opening of the shutter is represented by li (%) and a standard light quantity value (standard light quantity value determined from the standard data) at time ti is represented by ls i (%), where i means an ith control operation. Now, Ri is defined by Ri ≡ ls i - li. The electron gun power value Pi is determined at intervals by performing a PID (proportion, integration, and differentiation) control for Ri. A PID control equation for determining the electron power value Pi is as follows: where Kp, Ki, and Kd are arbitrary constants and The electron gun power (current value) is adjusted by performing the above control every control interval Δt (sec). In the invention, the current value of the electron gun is controlled with attention paid to the light quantity that is measured by the optical film thickness meter. Therefore, even if another condition (the substrate temperature, the degree of vacuum, or the like) is different from a set value, antireflection films having only a small variation in the antireflection characteristic can be formed without requiring any human hands. The light quantity that is measured by the optical film thickness meter is a quantity that uniquely depends on the optical film thickness of a thin film. Therefore, by performing control so that this light quantity value coincides with the standard light quantity value, even if a condition of the apparatus or some other factor varies, thin films are formed resultantly so as to satisfy a condition that optical film thickness values at each time point of film formation are the same and finally thin films having approximately the same optical performance can be obtained reliably. Advantages of the above second embodiment As described above in detail, the invention is characterized in that standard film formation is performed and standard light quantity value data as pairs of a light quantity value and a film formation time as measured from the start of the film formation are generated in advance by using the optical film thickness meter, and that the power to be applied to the electron gun is controlled so that a measurement light quantity value during film formation becomes equal or approximately equal to a standard light quantity value at a corresponding time point of the standard light quantity value data. Therefore, a thin film forming method and apparatus capable of automatically forming thin films having constant optical properties with high reproducibility are obtained. Description of Symbols 1: Vacuum chamber 2: Coating dome 3: Electron gun 4: Crucible 5: Shutter 6: Substrate thermometer 7: Vacuum gauge 8: Evacuation unit 9: halogen heater 10: Optical film thickness meter 11: Film thickness monitor 12: Control means 13: Standard light quantity value data storing means.

Claims: A thin film forming method for performing a film formation by causing a film forming material to fly by using an electron gun and depositing it on a surface of a subject of film formation, comprising the steps of: using an optical film thickness meter (10) that measures a thickness of thin film by utilizing a fact that a transmission or reflection light quantity that is obtained when prescribed light is applied to a subject of film formation, on which the thin film is formed, depends on the thickness of the thin film, characterized by the following steps: a) generating, in advance, standard light quantity data as a plurality of pairs of a light quantity value and a film formation time point as measured from the start of the film formation; and b) controlling, in a film forming process, an amount of a film forming material to fly by controlling power to be applied to the electron gun so that a transmission or reflection light quantity value that is measured at each time point by the optical film thickness meter (10) becomes equal or approximately equal to a standard light quantity value at a corresponding time point of standard light quantity value data. A thin film forming method according to claim 1, wherein said controlling step comprises the step of: controlling, in a film forming process, an amount of a film forming material to fly so that a variation at each time point of a transmission or reflection light quantity value that is measured at each time point by the optical film thickness meter (10) becomes equal or approximately equal to a standard value at a corresponding time point of standard light quantity value data. The thin film forming method according to claim 1 or 2, characterized in that a method for causing the film forming material to fly is a method that causes the film forming material to fly by heating it with an electron gun. The thin film forming method according to claim 1 or 3, characterized in that the standard light quantity value at each time point in the film forming process is a transmission or reflection light quantity value at each time point that is measured by the optical film thickness meter when standard film formation is performed. The thin film forming method according to claim 2 or 3, characterized in that the standard value of the variation at each time point in the film forming process is a variation at each time point of a transmission or reflection light quantity value at each time point that is measured by the optical film thickness meter when standard film formation is performed. A thin film forming method according to claim 1, comprising the steps of: performing standard film formation and measuring at intervals transmission or reflection light quantity values from a start to an end of the film formation with the optical film thickness meter (10), and measuring at each time point during film formation transmission or reflection light quantity values from a start to an end of the film formation, and controlling power to be applied to the electron gun so that the light quantity value becomes equal or approximately equal to a standard light quantity value at a corresponding time point of the standard light quantity value data. The thin film forming method according to claim 6, characterized in that the power to be applied to the electron gun is controlled so that Ri that is defined by Ri ≡ ls i - li becomes equal or approximately equal to zero, where li (%) is a light quantity value at a film formation time ti as measured from the start of the film formation during the film formation and ls i (%) is a light quantity value at a corresponding time point ti of the standard light quantity data (i means an ith control operation). The thin film forming method according to claim 7, characterized in that the control in which the power to be applied to the electron gun is controlled so that Ri becomes equal or approximately equal to zero uses a PID (proportion, integration, and differentiation) control scheme. The thin film forming method according to claim 8, characterized in that the PID control controls a current value (Pi) of the electron gun according to a following PID control equation A thin film forming apparatus having film forming means for causing a film forming material to fly by using an electron gun in a film forming chamber and depositing it on a surface of a subject of film formation, comprising: an optical film thickness meter (10) for measuring a thickness of a thin film by utilizing a fact that a transmission or reflection light quantity that is obtained when prescribed light is applied to a subject of film formation on which the thin film is formed depends on the thickness of the thin film; storing means (13) for storing transmission or reflection standard light quantity values at respective time points in a film forming process that are measured by the optical film thickness meter when prescribed light is applied to a subject of film formation or standard values of light quantity value variations at respective time points; and control means (12) for controlling an amount of a film forming material that is caused to fly by the film forming means by controlling power to be applied to the electron gun so that a transmission or reflection light quantity value that is measured at each time point in a film forming process by the optical film thickness meter (10) or a light quantity value variation at each time point becomes equal or approximately equal to a transmission or reflection standard light quantity value at each time point in the film forming process or a standard value of the light quantity value variation at each time point stored in the storing means (13). The thin film forming apparatus according to claim 10, characterized in that the film forming means comprises an electron gun for causing the film forming material to fly by heating it. The thin film forming apparatus according to claim 10 or 11, characterized in: that the storing means stores the standard reflection light quantity value data (ls 1 , ls 2 , ls 3 , ...,ls m ) at respective time points (ts 1 , ts 2 , ts 3 , ..., ts m ) in standard film formation; that the measuring means measures reflection light quantity values (l 1 , l 2 , l 3 , ..., I n ) of a thin film at respective time points in the film forming process at respective unit times (t 1 , t 2 , t 3 , ..., t n ); and that the control means comprises: measurement light quantity variation calculating means for calculating a light quantity variation (Δl = l i - l i-1 ) after a lapse of an arbitrary time (Δt = t i - t 1- ) that is obtained by the measuring means; processing means for searching the standard light quantity value data storing means for or calculating a light quantity value (ls) that is the equal or close to a light quantity value (l i-1 ) obtained by the measuring means at an arbitrary time point (t i-1 ) and a corresponding time point (ts); standard light quantity variation calculating means for determining a standard light quantity value (ls') after a lapse of the arbitrary time (Δt = t i - t i-1 ), and for determining a variation (Δls i = ls' - ls) between the light quantity value (ls) and the standard light quantity value (ls'); and feedback control means for controlling power to be applied to the electron gun by using the measurement light quantity variation (Δl = l i - l i-1 ) determined by the measurement light quantity variation calculating means and the standard light quantity variation (Δls i = ls' - ls) determined by the standard light quantity variation calculating means. The thin film forming apparatus according to claim 12, characterized in that the feedback control means performs conversion operations of Ri ≡ 1 - (Δl i /Δls i ) and Qi ≡ kRi |Ri | (k: arbitrary constant), and controls the application power by a PID (proportion, integration, and differentiation) control so as to minimize |Qi|. A thin film forming apparatus according to claim 10, comprising storing means (13) for storing standard light quantity value data as pairs of a light quantity value and a film formation time as measured from a start of film formation that are generated by performing the film formation and measuring at intervals transmission or reflection light quantity values from the start to an end of the film formation with the optical film thickness meter; and control means (12) for comparing, during film formation, a light quantity value that is measured at each time point by the optical film thickness meter (10) with a standard light quantity value at a corresponding time point of the standard light quantity value data stored in the storing means (13), and for controlling power to be applied to the electron gun so that the two light quantity values become equal or approximately equal to each other.

Inventors: SHINDE KENICHI, TAKAHASHI YUKIHIRO, SHINDE, KENICHI, TAKAHASHI, YUKIHIRO, Shinde, Kenichi, Hoya Corp., Takahashi, Yukihiro, Hoya Corp.
Applicants: HOYA CORP, HOYA CORPORATION
Application year: 2000
Main classification: G02B5
IPC codes: C23C14