RETICLE FOR USE IN PHOTOLITHOGRAPHY AND METHODS FOR INSPECTING AND MAKING SAME

Abstract: A method for inspecting a reticle to evaluate the degree of corner rounding of a feature of a test pattern includes placing a reticle having a photomask formed thereon under a microscope. The photomask (106) has a pattern corresponding to features of a semiconductor chip design defined therein. In addition, the photomask further has a test pattern (120) and a crosshair orientation mark (102) defined therein. The test pattern (120) has at least one test corner (110) for evaluating a degree of corner rounding when the test pattern is defined in the photomask (106). The crosshair orientation mark (102) is defined in the photomask to orient a crosshair of the microscope relative to the test pattern (120). Once the crosshair of the microscope is aligned with the crosshair orientation mark (102), the crosshair of the microscope is used to evaluate the degree of rounding of the test corner (110) of the test pattern (120). A method for inspecting a reticle to determine the pass/fail status of the reticle, a method for making a reticle, and a reticle for use in photolithography also are described.

Description: RETICLE FOR USE IN PHOTOLITHOGRAPHY AND METHODS FOR INSPECTING AND MAKING SAME BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to semiconductor fabrication. More particularly, the invention relates to a method for inspecting a reticle for use in photolithography, a method for making a reticle for use in photolithography, and a reticle for use in photohthography 2. Description of the Related Art As is well known to those skilled in semiconductor fabπcation, photolithography involves selectively exposing regions of a resist-coated silicon wafer to a radiation pattern, and developing the exposed resist to either protect or expose regions of underlying wafer layers (e.g., regions of substrate, polysi con, or dielectric) In the fabrication of semiconductor chips, one of the problems experienced during photolithography is that the features defined in the wafer layer are subject to corner rounding. One source of this problem is the rounding of features that occurs duπng the manufactuπng of the reticle, which includes the photomask in which a pattern corresponding to features at one layer of an integrated circuit (IC) design is defined Figure 1A shows a conventional stepper apparatus 10 used in photolithography Stepper apparatus 10 includes radiation source 12, reticle 14, and focusing lens 16. As shown in Figure 1A, stepper apparatus 10 is disposed above resist-coated wafer 18, which is divided into a plurality of dies 20. In operation, radiation 22 (e.g., light) from radiation source 12 is projected onto the surface of resist-coated wafer 18. After passing through reticle 14 and focusing lens 16, radiation 22 contacts the surface of resist-coated wafer 18 within one of dies 20 and defines IC design pattern 24' in the die surface. This process is typically repeated until an IC design pattern has been defined in each of dies 20 by stepping stepper apparatus 10 in two dimensions above resist-coated wafer 18. Thereafter, conventional development, etching, and stopping operations are typically performed to define the features at one layer of the IC design. Figure IB shows a detailed view of conventional reticle 14 shown in Figure 1A. As shown in Figure IB, reticle 14 includes transparent glass plate 26 on which photomask 28 is formed. Photomask 28, which is formed of chromium or other suitable light-blocking mateπal, has IC design pattern 24 defined therein. IC design pattern 24 corresponds to features at one layer in an IC design. When radiation 22 from radiation source 12 is directed toward reticle 14, radiation (e.g., light) passes through pattern 24, which corresponds to the portion of transparent glass plate 26 not covered by photomask 28, and projects onto resist-coated silicon wafer 18 (see Figure 1A) disposed below the reticle Reticles are presently manufactured by depositing a chromium photomask on a transparent glass plate, coating the photomask with a resist, defining a pattern in the resist using a pattern generator, developing the resist, and subjecting the photomask to chemical processing to remove everything but the desired pattern from the glass plate. In the operation in which the pattern is defined in the resist, the pattern generator directs an electron beam to define the desired features in the resist. Figure 2A shows an exemplary ideal IC design pattern 24 that may be defined in a photomask. The ideal pattern 24 has well-defined outside corners 30 and inside corners 32 The corners 30 and 32 form shaφ, 90 degree angles. Unfortunately, when the pattern is defined in the photomask, these corners are subject to rounding due to electromagnetic wave effects and chemical processing effects Figure 2B illustrates the corner rounding that may occur duπng preparation of a photomask in which ideal IC design pattern 24 shown in Figure 2A is to be defined. As shown in Figure 2B, actual IC design pattern 24' has rounded outside corners 30a and rounded inside corners 32a. These corners do not form shaφ, 90 degree angles and, consequently, the actual IC design pattern 24' does not have the desired shape of ideal IC design pattern 24. This is undesirable because the discrepancy in shape of desired features, e.g., metallization features, may render numerous devices on a wafer inoperable and thereby decrease the manufactuπng yield The deleterious effects of co er rounding become more problematic at smaller feature sizes. Thus, as the feature sizes in modem IC designs continue to decrease, it becomes increasingly more important to monitor closely all potential sources of comer rounding to avoid excessive yield losses. As noted above, one source of comer rounding is the rounding of comers that occurs in the process of manufacturing the reticle. To date, several approaches have been used to inspect reticles for comer rounding. In one approach, an optical inspection device is used to compare the actual features of the photomask to corresponding data on a data tape used to prepare the photomask. This approach is undesirable because it requires complex equipment that is not only expensive, but also may be difficult and time consuming to install and operate. In another approach, an operator inspects the reticles under a microscope to determine visually whether the degree of comer rounding of features defined in the photomask is acceptable. This approach suffers from the disadvantage that it may be inconsistent or unreliable because it relies upon the operator's subjective judgment to determine the acceptability of the reticle. In view of the foregoing, there is a need for an inexpensive, consistent, and reliable method of inspecting reticles to determine whether the degree of co er rounding is within acceptable limits. SUMMARY OF THE INVENTION Broadly speaking, the present invention fills these needs by providing a photomask having a test pattern and a reference marker defined therein. When a reticle having the photomask formed thereon is inspected under a microscope, the crosshair of the microscope may be used in conjunction with the reference marker to evaluate the degree of comer rounding of a feature of the test pattern. In one aspect of the invention, a method for inspecting a reticle to evaluate the degree of comer rounding of a feature of a test pattern is provided. In this method a reticle having a photomask formed thereon is placed under a microscope. The photomask has a pattern corresponding to features of a semiconductor chip design defined therein. In addition, the photomask further has a test pattern and a crosshair orientation mark defined therein. The test pattern has at least one test comer for evaluating a degree of comer rounding when the test pattern is defined in the photomask. The crosshair oπentation mark is defined in the photomask to oπent a crosshair of the microscope relative to the test pattern. Once the crosshair of the microscope is aligned with the crosshair oπentation mark, the crosshair of the microscope is used to evaluate the degree of rounding of the test comer of the test pattern. In another aspect of the invention, a method for inspecting a reticle to determine the pass/fail status of the reticle is provided. In this method, a reticle having a photomask formed thereon is placed under a microscope. The photomask has a pattern corresponding to features of a semiconductor chip design defined therein. The photomask further has a test pattern and a crosshair alignment mark defined therein. The test pattern has at least one test co er for determining a pass/fail status of the reticle The crosshair alignment mark is defined in the photomask to orient a crosshair of the microscope relative to the test pattern. Once the crosshair of a microscope is aligned with the crosshair alignment mark, the crosshair of the microscope is used to determine the pass/fail status of the reticle. In yet another aspect of the invention, a method for making a reticle is provided. In this method, a glass substrate is first provided. A photomask having a pattern corresponding to features of a semiconductor chip design is then generated A cell that includes a test pattern and a reference marker is defined in the photomask. The reference marker is positioned relative to the test pattern so that the reference marker can be used in conjunction with a crosshair of a microscope to inspect a feature of the test pattern. Finally, the photomask is formed on the glass substrate to provide a reticle. In a still further aspect of the invention, a reticle for use in photolithography is provided. The reticle includes a glass substrate and a photomask formed on the glass substrate. The photomask has features of a semiconductor chip design, a test pattern, and a reference marker defined therein. The reference marker is positioned relative to the test pattern so that the reference marker can be used in conjunction with a crosshair of a microscope to inspect a feature of the test pattern. The present invention advantageously provides a simple and inexpensive method for inspecting the features of a photomask formed on a reticle. The inspection methods of the present invention are reliable because they rely upon an objective standard for evaluating comer rounding of photomask features formed on a reticle. In addition, the present invention enables the uniformity of features formed at different locations on the reticle to be verified quickly and reliably. It is to be understood that the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the invention, as claimed. BRIEF DESCRIPTION OF THE DRAWINGS The accompanying drawings, which are incoφorated in and constitute part of this specification, illustrate exemplary embodiments of the invention and together with the description serve to explain the principles of the invention. Figure 1A shows a conventional stepper apparatus used in photolithography. Figure IB shows a detailed view of reticle 14 shown in prior art Figure 1A. As shown in Figure IB, reticle 14 has a photomask formed thereon. Figure 2A shows an exemplary ideal IC design pattern that may be defined in a photomask. Figure 2B illustrates the comer rounding that may occur during preparation of a photomask in which the ideal IC design pattern shown in Figure 2A is to be defined. Figure 3 shows a view taken through the lens of a microscope of a portion of a reticle in accordance with one embodiment of the present invention. Figure 4 shows the positioning of the inspection features on a reticle in accordance with one embodiment of the invention. Figure 5 is a flowchart illustrating the method operations performed in inspecting a reticle to evaluating the degree of rounding of features defined in a photomask in accordance with one embodiment of the present invention. Figure 6 is a flowchart illustrating the method operations performed in inspecting a reticle to determine the pass/fail status of the reticle in accordance with one embodiment of the present invention. Figure 7 is a flowchart illustrating the method operations performed in making a reticle in accordance with one embodiment of the present invention. DETAILED DESCRIPTION OF THE INVENTION Several exemplary embodiments of the invention will now be descπbed in detail with reference to the accompanying drawings Figures 1A, IB, 2A, and 2B are discussed above in the "Background of the Invention" section. Figure 3 shows a view taken through a microscope lens of a portion of a photomask in accordance with one embodiment of the present invention As is well known to those skilled in the art, a photomask is formed on a reticle to enable a pattern corresponding to features at one layer in an integrated circuit (IC) design to be defined in the surface of a wafer. As shown in Figure 3, the portion of photomask 106 has inspection features defined therein. The inspection features include a test pattern 120 and two sets of reference markers disposed proximate to test pattern 120 for enabling two methods for inspecting comer rounding. The shape of test pattern 120 generally corresponds to features of a semiconductor design and, in one embodiment, has at least one test comer 110 By way of example, the features may correspond to comers of a metallization pattern As shown in Figure 3, test pattern 120 has a square shape with rounded comers 110. It will be apparent to those skilled in the art that the shape of the test pattern may be vaπed, provided the test pattern includes a representative comer corresponding to a feature in an integrated circuit design that can be inspected using the methods of the invention descπbed herein The first set of reference markers may be used to measure the degree of comer rounding As shown in Figure 3, the first set of reference markers includes crosshair oπentation marks 102 and comer rounding measurement marks 104a, 104b, and 104c Duπng inspection, the reticle is examined under a microscope and the relative distance between crosshair oπentation mark 102 and the co er of test pattern 120 is determined using measurement marks 104, as will be descπbed in more detail later. As shown in Figure 3, crosshair oπentation mark 102 is oπented at about a 45 degree angle relative to a side of the test pattern, however, it will be apparent to those skilled in the art that this angle may be varied to suit the needs of particular situations. To enable the degree of comer rounding to be determined, crosshair orientation marks 102 are positioned relative to test pattern 120 such that a line defined by crosshair orientation marks 102 passes through a point defined by a hypothetical comer of test pattern having perfect right angles. As the result of the comer rounding that occurs during formation of the photomask, crosshair orientation marks 102 will be offset some distance from the rounded test comer 110a of test pattern 120 that is actually defined in photomask 106. As shown in Figure 3, test comer 110a is the top left comer of test pattern 120. It will be apparent to those skilled in the art that the position of the test comer on the test pattern may be varied from that shown in Figure 3. The co er rounding measurement marks 104 may be used to measure the degree of comer rounding of the test co er of the test pattern. Each of measurement marks 104a, 104, and 104c is offset from crosshair orientation marks 102 to indicate a specific degree of co er rounding. If desired, the degree of comer rounding may be quantified. As shown in Figure 3, the degree of comer rounding indicated by measurement marks 104a, 104b, and 104c is quantified as ".02," ".04," and ".06," respectively. If desired, these numbers may indicate the finite distance between measurement marks 104 and crosshair orientation marks 102. Alternatively, these numbers may be arbitrarily selected to indicate a relative degree of comer rounding. The second set of reference markers on photomask 106 may be used for determining whether the comer rounding is beyond the maximum level of acceptable comer rounding. In other words, the second set of reference markers may be used for determining whether the reticle should be rejected because of excessive comer rounding. As shown in Figure 3, the second set of reference markers includes crosshair alignment marks 112a, 112b, 112c, and 112d. The crosshair orientation marks 112 define a first point and a second point that may be used to align the crosshair 108 of the microscope relative to test pattern 120 to indicate the maximum acceptable degree of comer rounding. Specifically, the intersection of marks 112a and 112c defines the first point and the intersection of marks 112b and 112d defines the second point. To determine the pass/fail status, i.e., the acceptability, of the reticle, crosshair 108 of the microscope is aligned such that it intersects the first and second points defined by the intersections of crosshair alignment marks 112. Once crosshair 108 is so aligned, the position of test comer 110b relative to crosshair 108 is used to determine the pass/fail status of the reticle. If the test comer 110b beyond crosshair 108, as shown in Figure 3, then the reticle passes, i.e., is acceptable, because the degree of comer rounding is within the acceptable limit On the other hand, if test comer 110b does not reach the crosshair 108, then the degree of comer rounding exceeds the acceptable limit and the reticle may be rejected. As shown in Figure 3, crosshair oπentation marks 112 define a portion of a rectangle. Alternatively, crosshair oπentation marks 112 may define other geometπc shapes or elements, provided such marks allow the crosshair of the microscope to be appropriately positioned relative to the test pattern. For example, the crosshair orientation marks may include a first pair of intersecting line segments defining the first point and a second pair of intersecting line segments defining the second point Similar to the embodiment shown in Figure 3, the first and second points in this alternative embodiment should be positioned relative to the test co er so that the intersection of a line defined by the first and second points with the test comer defines a maximum amount of acceptable comer rounding. Figure 4 shows the positioning of the inspection features on a reticle in accordance with one embodiment of the invention. As shown therein, reticle 202 has cells, which include the inspection features of the invention, defined in the photomask formed thereon at outer locations 208 and inner locations 210. In one embodiment, reticle 202 has four die portions 204 defined by scπbe portions 206. As is well known to those skilled in the art, each die portion 204 corresponds to the portion of the wafer where active features for the semiconductor chip are fabπcated. It will be apparent to those skilled in the art that the pπnciples of the invention are applicable to reticles having any number of die portions 204 formed thereon. As shown in Figure 4, the cells at outer locations 208 are located outside of die portions 204 and scπbe 206. The outer cells may be used to detect tilt or flatness defects resulting from manufactuπng problems. The cells at inner locations 210 are located inside scπbe 206, but outside of die portions 204 The inner cells may be used to detect radial processing defects resulting from manufactuπng problems. The inner and outer cells may include one or both of the comer rounding measurement tools described above in connection with Figure 3. Figure 5 is a flowchart illustrating the method operations performed in inspecting a reticle to evaluating the degree of rounding of features defined in a photomask in accordance with one embodiment of the present invention. The method begins in operation 302 in which a reticle having a photomask formed thereon is placed under a microscope. The photomask has a pattern corresponding to features of a semiconductor chip design defined therein. The photomask further has a test pattern and a crosshair orientation mark defined therein. In one embodiment, the photomask has the test pattern and the crosshair orientation marks shown in Figure 3 defined therein. The test pattern has at least one test comer for evaluating a degree of co er rounding when the test pattern is defined in the photomask. The crosshair orientation mark is defined in the photomask so that the crosshair of the microscope may be oriented in a desired location relative to the test pattern. Next, in operation 304, the crosshair of the microscope is aligned with the crosshair orientation mark. Once the crosshair is aligned with the crosshair orientation mark, the method proceeds to operation 306 in which the crosshair of the microscope is used to evaluate the degree of rounding for the test comer of the test pattern. The crosshair may be used to evaluate the degree of comer rounding by moving the stage of the microscope until the crosshair just touches the test comer of the test pattern defined in the photomask. The distance between the crosshair orientation mark and the crosshair of the microscope is indicative of the degree of co er rounding of the test comer of the test pattern. In one embodiment, a measurement scale such as, for example, comer rounding measurement marks 104 shown in Figure 3, is defined in the photomask. This measurement scale may be used to obtain a value for the degree of comer rounding based on the position of the crosshair relative to the measurement scale. Figure 6 is a flowchart illustrating the method operations performed in inspecting a reticle to determine the pass/fail status of the reticle in accordance with one embodiment of the present invention. The method starts in operation 402 in which a reticle having a photomask formed thereon is placed under a microscope. The photomask has a pattern corresponding to features of a semiconductor chip design defined therein. The photomask further has a test pattern and a crosshair alignment mark defined therein. The test pattern has at least one test co er for determining a pass/fail status of the reticle. The crosshair alignment mark is defined in the photomask to oπent a crosshair of the microscope at a desired location relative to the test pattern. Next, in operation 404, the crosshair of the microscope is aligned with the crosshair alignment mark. Once the crosshair of the microscope is aligned with the crosshair alignment mark, the method proceeds to operation 406 in which the crosshair of the microscope is used to determine the pass/fail status of the reticle. As descπbed above in connection with the descπption of Figure 3, the position of the crosshair alignment mark relative to the test pattern is selected such that the crosshair of the microscope defines the maximum acceptable amount of co er rounding when aligned with the crosshair alignment mark. If the test comer reaches or extends beyond the crosshair of the microscope, then the reticle passes, i.e., is acceptable. In other words, the degree of co er rounding in the test co er is within the maximum acceptable limit. If the test comer does not reach the crosshair of the microscope, then the reticle fails, i.e., is rejected. In other words, the degree of comer rounding in the test comer is beyond the maximum acceptable limit. Figure 7 is a flowchart illustrating the method operations performed in making a reticle in accordance with one embodiment of the present invention. The method starts in operation 702 in which a glass substrate is provided In operation 704, a photomask having a pattern corresponding to features of a semiconductor chip design defined is generated. In one embodiment, the photomask pattern is generated by computer using suitable software. Next, in operation 706, a cell including a test pattern and a reference marker is defined in the photomask pattern. In one embodiment, the reference marker is positioned relative to the test pattern so that the reference marker can be used in conjunction with a crosshair of a microscope to inspect a feature of the test pattern. By way of example, the reference marker may be one or both of crosshair oπentation mark 102 and crosshair alignment mark 112 shown in Figure 3. The method then proceeds to operation 708 in which the photomask is formed on the glass substrate to provide a reticle The photomask may be formed on the glass substrate using any suitable technique, e.g., the conventional technique described above. If desired, a number of cells may be defined in the photomask pattern to detect tilt defects and radial processing defects of the photomask when formed on the glass substrate. In one embodiment, as shown in Figure 4, a plurality of cells disposed at outer locations 208 are configured to detect tilt or flatness defects during manufacturing of the reticle. In addition, a plurality of cells disposed at inner locations 210 are configured to detect radial processing defects during manufacturing of the reticle. In summary, the present invention provides a reticle for use in photolithography and methods for inspecting and making the reticle. The invention has been described herein in terms of several exemplary embodiments. Other embodiments of the invention will be apparent to those skilled in the art from consideration of the specification and practice of the invention. The embodiments and preferred features described above should be considered exemplary, with the invention being defined by the appended claims. What is claimed is:

Claims: CLAIMS 1. A method for inspecting a reticle, the method comprising: placing a reticle having a photomask formed thereon under a microscope, the photomask having a pattern corresponding to features of a semiconductor chip design defined therein, the photomask further having a test pattern and a crosshair orientation mark defined therein, the test pattern having at least one test comer for evaluating a degree of comer rounding when the test pattern is defined in the photomask, and the crosshair orientation mark being defined in the photomask to orient a crosshair of the microscope relative to the test pattern; aligning the crosshair of the microscope with the crosshair orientation mark; and using the crosshair of the microscope to evaluate the degree of rounding of the test comer of the test pattern. 2. The method of claim 1, wherein the test pattern is a rectangle, the crosshair orientation mark is oriented at approximately a 45 degree angle relative to a side of the rectangle, and a line defined by the crosshair orientation mark passes through a point defined by the test co er of the rectangle in the absence of excessive comer rounding. 3. The method of claim 2, wherein a measurement scale is defined in the photomask, and the operation of using the crosshair of the microscope to evaluate the degree of rounding for the test comer of the test pattern comprises: moving the reticle under the microscope until the crosshair just touches the test comer of the rectangle; and obtaining a value for the degree of comer rounding based on a position of the crosshair relative to the measurement scale. 4. The method of claim 3, wherein the rectangle is a square. 5. A method for inspecting a reticle, the method comprising: placing a reticle having a photomask formed thereon under a microscope, the photomask having a pattern corresponding to features of a semiconductor chip design defined therein, the photomask further having a test pattern and a crosshair alignment mark defined therein, the test pattern having at least one test comer for determining a pass/fail status of the reticle, and the crosshair alignment mark being defined in the photomask to orient a crosshair of the microscope relative to the test pattern; aligning the crosshair of the microscope with the crosshair alignment mark; and using the crosshair of the microscope to determine the pass/fail status of the reticle. 6. The method of claim 5, the crosshair alignment mark includes a first pair of intersecting line segments defining a first point and a second pair of intersecting line segments defining a second point, the first and second points being positioned relative to the test comer so that an intersection of a line defined by the first and second points with the test comer defines a maximum acceptable amount of comer rounding. 7. The method of claim 6, wherein the operation of using the crosshair of the microscope to determine the pass/fail status of the reticle comprises: determining whether the test comer reaches the crosshair of the microscope; accepting the reticle if the test co er reaches the crosshair of the microscope; and rejecting the reticle if the test comer does not reach the crosshair of the microscope. 8. The method of claim 6, wherein the rectangle is a square. 9. The method of claim 6, wherein the first and second pairs of intersecting line segments define comers of a rectangle. 10. A method for making a reticle, the method comprising: providing a glass substrate; generating a photomask having a pattern corresponding to features of a semiconductor chip design; defining in the photomask a cell that includes a test pattern and a reference marker, the reference marker being positioned relative to the test pattern so that the reference marker can be used in conjunction with a crosshair of a microscope to inspect a feature of the test pattern; and forming the photomask on the glass substrate. 11. The method of claim 10, further compπsing defining the cell outside of a die portion and a scπbe of the photomask. 12 The method of claim 11, further compπsing configuπng a plurality of cells to be used in conjunction with the microscope to detect tilt defects of the photomask 13 The method of claim 10, further compπsing defining the cell inside of a scnbe of the photomask and outside of a die portion of the photomask. 14 The method of claim 13, further compπsing configunng a plurality of cells to be used in conjunction with the microscope to detect radial processing defects of the photomask. 15. The reticle of claim 10, wherein the crosshair of the microscope is used to evaluate the degree of rounding of a test comer of the test pattern. 16 The reticle of claim 10, wherein the crosshair of the microscope is used to determine a pass/fail status of the reticle. 17. A reticle for use in photolithography, the reticle compπsing a glass substrate; a photomask formed on the glass substrate, the photomask having features of a semiconductor chip design, a test pattern, and a reference marker defined therein, the reference marker being positioned relative to the test pattern for use in conjunction with a crosshair of a microscope to inspect a feature of the test pattern. 18 The reticle of claim 17, wherein the crosshair of the microscope is used to evaluate the degree of rounding of a test comer of the test pattern. 19. The reticle of claim 18, further comprising: a crosshair orientation mark defined in the photomask, the crosshair orientation mark being defined in the photomask to orient the crosshair of a microscope relative to the test pattern. 20. The reticle of claim 19, wherein the test pattern is a rectangle, the crosshair orientation mark is oriented at an approximately 45 degree angle relative to a side of the rectangle, and a line defined by the crosshair orientation mark passes through a point defined by the test co er of the rectangle in an absence of excessive comer rounding. 21. The reticle of claim 20, further comprising: a measurement scale defined in the photomask, wherein a value for the degree of comer rounding may be obtained based on a position of the crosshair relative to the measurement scale. 22. The reticle of claim 17, wherein the crosshair of the microscope is used to determine a pass/fail status of the reticle. 23. The reticle of claim 22, further comprising: a crosshair alignment mark defined in the photomask for orienting a crosshair of a microscope relative to the test pattern. 24. The reticle of claim 23, wherein the crosshair alignment mark includes a first pair of intersecting line segments defining a first point, and a second pair of intersecting line segments defining a second point, wherein the first and second points are positioned relative to the test comer so that an intersection of a line defined by the first and second points with the test comer defines a maximum acceptable amount of comer rounding.

Inventors: MCMULLEN THOMAS F, MCMULLEN, THOMAS, F.
Applicants: KONINKL PHILIPS ELECTRONICS NV, PHILIPS SEMICONDUCTORS INC, KONINKLIJKE PHILIPS ELECTRONICS N.V., PHILIPS SEMICONDUCTORS, INC.
Application year: 2000
Main classification: G01N21
IPC codes: G01N21, G03F1, G03F7, H01L21