Composition for ceramic substrate and ceramic circuit component

Abstract: There is disclosed a composition for a ceramic substrate, comprising a mixture of: powdered borosilicate-based glass comprising 5% to 17.5% by weight of B 2 O 3 , 28% to 44% by weight of SiO 2 , 0% to 20% by weight of Al 2 O 3 , and 36% to 50% by weight of MO (where MO is at least one selected from the group consisting of CaO, MgO, and BaO); and a powdered ceramic; in which the amount of the powdered borosilicate-based glass being 40% to 49% by weight based on the total amount of the composition for a ceramic substrate, and the amount of the powdered ceramic being 60% to 51% by weight based on the total amount of the composition for a ceramic substrate.

Description: The present invention relates to a composition for a ceramic substrate and a ceramic circuit component, and more particularly to a composition for a ceramic substrate which can be sintered at a temperature as low as 1,000°C or less, and a ceramic circuit component, such as a multilayered integrated circuit component and a thick-film hybrid circuit component, which is fabricated using the composition for the ceramic substrate. Currently, alumina substrates are predominantly used as ceramic substrates. In order to obtain an alumina substrate, firing must be performed at a temperature as high as approximately 1,600°C, and thereby, for example, when a multilayered circuit component is fabricated using the alumina substrate, a metal having a high melting point must be used for internal conductors. However, the metal having a high melting point generally has a high resistance, and is thus unsuitable for conductors used for multilayered circuit components in which higher frequencies and higher speeds are increasingly in demand. Accordingly, glass-ceramic substrates having a firing temperature of 1,000°C or less, which enable use of metals having a low resistance, such as Au, Ag, Ag-Pd, Ag-Pt, and Cu, as internal conductors, have been receiving attention and various types of glass-ceramic substrates have been developed. For example, Japanese Examined Patent Publication No. 3-53269 discloses a low-temperature sinterable ceramic substrate which is obtained by mixing 50% to 64% by weight of powdered glass and 50% to 35% by weight of powdered Al 2 O 3 , followed by sintering at 800 to 1,000°C. However, with respect to such a substrate in which glass is loaded at the rate of 50% or more, the proportion of crystalline substances in the sintered substrate is decreased, and thus the dielectric loss of the substrate may be increased, or it may be difficult to obtain high mechanical strength, which is disadvantageous. Additionally, when a thick-film electrode and a thick-film resistor are baked on the surface of the sintered substrate, the substrate easily deforms under the influence of the remaining glass, which is also disadvantageous. As a solution to the problems described above, the composition of the powdered glass as a starting material may be arranged so as to be easily crystallized after sintering, thus increasing the proportion of crystalline substances in the sintered substrate. However, with respect to a substrate having a large proportion of glass in the starting material, such as with a glass load of 50% or more, strain in the substrate caused by the crystallization of glass during firing is influential, and deformation, such as warpage, and cracking easily occur in the sintered substrate, which is disadvantageous. Japanese Examined Patent Publication No. 4-42349 discloses a low-temperature sinterable ceramic composition in which 40% to 50% by weight of powdered glass, composed of 10% to 55% by weight of MO (where M is at least one of Ca and Mg), 0% to 30% by weight of Al 2 O 3 , 45% to 70% by weight of SiO 2 , and 0% to 30% by weight of B 2 O 3 , and 60% to 50% by weight of powdered Al 2 O 3 are mixed and fired at 1,100°C or less. The above patent publication also discloses that by increasing the proportion of the powdered Al 2 O 3 in the starting material, a transverse strength of 2,600 to 3,200 kgf/cm 2 (255 to 314 MPa) can be obtained. However, the transverse strength described above is lower than the transverse strength (approximately 350 MPa) of the alumina substrate which is used as a circuit substrate, and higher strength is desired. A substrate disclosed in the same patent publication has a coefficient of thermal expansion in the range from 4.0 to 5.7 ppm/°C. It has been believed that a substrate having a low coefficient of thermal expansion is preferable on the assumption that a silicon chip (IC) having a coefficient of thermal expansion of 3.5 ppm/°C is directly mounted on the substrate. However, due to the development of a mounting method in which stress is relieved using a cushioning material such as an under filling, a mismatch in the coefficient of thermal expansion between the ceramic substrate and the silicon chip does not greatly cause a problem. In addition, the size of the silicon chip is not increased as has been expected. Under the circumstances, when the ceramic substrate is joined to a larger resin substrate as a motherboard, a mismatch in the coefficient of thermal expansion between the ceramic substrate and the resin substrate is rather influential. For example, a typical glass epoxy (FR-4) has a coefficient of thermal expansion of 14 to 16 ppm/°C, and an epoxy reinforced with aramid fibers has a coefficient of thermal expansion of approximately 8 ppm/°C. If a degree of mismatch in the coefficient of thermal expansion between the ceramic substrate and the resin substrate is increased, the reliability of the connection between the two substrates is lost, which is disadvantageous. US-A-4,777,092 discloses a composition for a ceramic substrate comprising 30 to 70 weight % of glass powder consisting essentially of 38 to 48 weight % of SiO 2 , 1 to 8 weight % of Al 2 O 2 , 19 to 61 weight % of alkaline-earths altogether comprising inter alia 1 to 8 % CaO. Further, the prior art composition comprises 28 to 70 weight % of powdered ceramic. SUMMARY OF THE PRESENT INVENTION It is the object of the present invention to overcome the above described problems. This object is achieved with a composition for a ceramic substrate having the features of claim 1, a composition for a ceramic substrate having the features of claim 2, a ceramic circuit component having the features of claim 8 or a ceramic green sheet having the features of claim 10. Subclaims are directed to preferable embodiments. More specifically, a composition for a ceramic substrate used for electronic circuits with a firing temperature of 1000°C or less is provided, thus enabling metals having a low resistance, such as Au, Ag, Ag-Pd, Ag-Pt and Cu, to be used as internal conductors. In a ceramic substrate obtained by firing the composition, it is possible to achieve a transverse strength of 300 MPa or more, a Q factor (1 MHz) of 1400 or more and a coefficient of thermal expansion of 6.0 ppm/°C or more. According to the composition for the ceramic substrate of the present invention as described above, since low-temperature sintering at 1,000°C or less is enabled, when a ceramic circuit component provided with a conductive circuit containing a metal having a low resistance, such as an Ag-based metal or a Cu-based metal is fabricated, firing can be performed simultaneously with the metal for the conductive circuit. In the ceramic substrate fabricated using the composition, it is possible to achieve a high mechanical strength, a low dielectric constant, a low loss, and a high coefficient of thermal expansion required for the substrate. Accordingly, a ceramic circuit component, such as a multilayered ceramic circuit component, having satisfactory characteristics and high reliability can be obtained. In particular, in accordance with the composition for the ceramic substrate of the present invention, since it is possible to achieve a coefficient of thermal expansion of 6.0 ppm/°C or more, satisfactory matching in the coefficient of thermal expansion with a motherboard composed of, for example, an epoxy resin, is obtained, resulting in high connection reliability. In accordance with the composition for the ceramic substrate of the present invention, when the borosilicate-based glass contains at least one alkali metal oxide selected from the group consisting of Li 2 O, K 2 O, and Na 2 O with an amount of 5 parts by weight or less relative to 100 parts by weight of the total of B 2 O 3 , SiO 2 , Al 2 O 3 , and MO, the softening and flow properties of the glass are accelerated, and even if the glass amount is reduced in the composition for the ceramic substrate, a relatively low sintering temperature can be maintained. In accordance with the composition for the ceramic substrate of the present invention, when the borosilicate-based glass contains at least one compound selected from the group consisting of TiO 2 , ZrO 2 , Cr 2 O 3 , CaF 2 , and CuO with an amount of 5 parts by weight or less relative to 100 parts by weight of the total of B 2 O 3 , SiO 2 , Al 2 O 3 , and MO, the crystallization of the glass is accelerated, and it is possible to further improve the high mechanical strength and the low loss of the resultant ceramic substrate. Other features and advantages of the present invention will become apparent from the following description of the invention which refers to the accompanying drawing. BRIEF DESCRIPTION OF DRAWING Fig. 1 is a sectional view of a multilayered ceramic circuit component 1 in accordance with an embodiment of the present invention. DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention is characterized in that, with respect to a composition for a ceramic substrate, composed of a mixture of powdered borosilicate-based glass and a powdered ceramic, such as powdered alumina, which can be fired at low temperatures, by adding the powdered borosilicate-based glass having a composition which is easily crystallized after sintering as a sintering additive, and by setting the glass amount lower than the ceramic amount, the proportion of crystalline substances in the sintered ceramic substrate is increased, and a low-temperature sinterable ceramic substrate having a high mechanical strength, a coefficient of thermal expansion as high as 6.0 ppm/°C or more, and a low loss can be obtained. As described above, the crystallization of glass during firing causes strain in the ceramic substrate, and deformation may occur in the sintered ceramic substrate. However, since the amount of glass added in the present invention is 49% by weight or less, which is smaller than the amount of the ceramic added, the deformation of the ceramic substrate resulting from the crystallization of the glass during firing can be advantageously suppressed. The added glass functions as a sintering additive for sintering the ceramic substrate at 1,000°C or less due to softening and viscous flow in the firing process. In order to secure the function as the sintering additive, the amount of glass added must be 40% by weight or more. As described above, the crystal phase of wollastonite, anorthite, and the like is easily precipitated from the glass component which is in the softened and viscous flow state, thus enabling the sintered ceramic substrate to have a high mechanical strength and a low loss. The glass is composed of B 2 O 3 and SiO 2 as glass network-forming oxides, MO as a glass network-modifying oxide (where MO is at least one oxide selected from the group consisting of CaO, MgO, and BaO), and Al 2 O 3 as a glass network intermediate oxide which exhibits the network-forming capacity in collaboration with the network-modifying oxide. The proportion of the oxides is adjusted so that the glass functions as the sintering additive for sintering the ceramic substrate at 1,000°C or less and the crystal phase is easily precipitated in the sintering process. More specifically, out of B 2 O 3 and SiO 2 as the glass network-forming oxides, B 2 O 3 is an oxide for reducing the softening temperature and accelerating viscous flow, and the amount thereof is selected at 5% to 17.5% by weight. If the amount is less than 5% by weight, the softening and flow properties of the glass are degraded. If the amount is more than 17.5% by weight, the water resistance of the glass becomes insufficient, and the properties of the ceramic substrate may be changed when used in a high temperature and high humidity environment, and also the Q factor of the glass itself is decreased, thus decreasing the Q factor of the resultant ceramic substrate. In the glass network-forming oxides, the SiO 2 amount is selected at 28% to 44% by weight. If the SiO 2 amount is less than 28% by weight, the dielectric constant of the remaining glass itself is increased, and the ceramic substrate having a low dielectric constant cannot be obtained. On the other hand, if the amount is more than 44% by weight, the softening and flow properties of the glass are degraded, and thus the ceramic substrate cannot be sintered at 1,000°C or less. The crystallization of the glass is also inhibited, and thus characteristics such as a high mechanical strength and a low loss cannot be achieved, and the coefficient of thermal expansion of the ceramic substrate is decreased. The amount of Al 2 O 3 as the glass network intermediate oxide is selected at 0% to 20% by weight. The Al 2 O 3 acts as a glass intermediate oxide and stabilizes the glass structure. If the Al 2 O 3 amount exceeds 20% by weight, the softening and flow properties of the glass are degraded, and the ceramic substrate cannot be sintered at 1,000°C or less. The crystallization of the glass is also inhibited, and thus characteristics such as a high mechanical strength and a low loss cannot be achieved. MO as the glass network-modifying oxide is a component for accelerating the softening and flow properties of the glass, and the amount thereof is selected at 36% to 50% by weight. If the MO amount is less than 36% by weight, the softening and flow properties of the glass are degraded and the coefficient of thermal expansion of the resultant ceramic substrate is decreased. On the other hand, if the MO amount exceeds 50% by weight, the glass structure becomes unstable, and a glass of stable quality cannot be obtained. In the production of the glass having the composition described above, in order to further accelerate the softening and flow properties, at least one alkali metal oxide selected from the group consisting of Li 2 O, K 2 O, and Na 2 O may be incorporated with an amount of 5 parts by weight or less relative to 100 parts by weight of the total of B 2 O 3 , SiO 2 , Al 2 O 3 , and MO. Additionally, if the amount of the alkali metal oxide exceeds 5 parts by weight, since the electrical insulating properties of the glass are degraded, the electrical insulating properties of the sintered ceramic substrate are degraded, and the coefficient of thermal expansion of the ceramic substrate is also decreased. In order to further increase the high mechanical strength and the low loss of the resultant ceramic substrate by accelerating the crystallization of the glass in the firing process, at least one compound selected from the group consisting of TiO 2 , ZrO 2 , Cr 2 O 3 , CaF 2 , and CuO may be incorporated with an amount of 5 parts by weight or less relative to 100 parts by weight of the total of B 2 O 3 , SiO 2 , Al 2 O 3 , and MO. Additionally, if the amount of the compound exceeds 5 parts by weight, since the dielectric constant of the glass is increased, the sintered ceramic substrate has an excessively high dielectric constant. The composition for the ceramic substrate described above is advantageously used for producing a ceramic circuit component provided with a substrate obtained by forming and firing the composition and a conductive circuit formed in relation to the substrate. Fig. 1 is a sectional view which schematically shows a multilayered ceramic circuit component 1, which is an example of the ceramic circuit component described above, in accordance with an embodiment of the present invention. In brief, the multilayered ceramic circuit component 1 includes a ceramic substrate 2 and a conductive circuit 3 which is formed in and/or on the surface of the ceramic substrate 2. The ceramic substrate 2 is fabricated by firing a ceramic green compact obtained by laminating a plurality of green sheets containing the composition for the ceramic substrate described above, and includes a plurality of ceramic layers 4 obtained by firing the plurality of green sheets, respectively. The conductive circuit 3 is formed, for example, by firing a conductive paste containing a conductive component comprising at least one metal selected from the group consisting of Ag, Au, and Cu as a principal ingredient simultaneously with the ceramic green compact. The conductive circuit 3 is provided with, for example, external conductors 5, 6, and 7 which are formed on the surface of the ceramic substrate 2, and is provided with, for example, internal conductors 8, 9, 10, 11, and 12 which are formed in the ceramic substrate 2, and is also provided with via-hole joints 13, 14, 15, 16, 17, 18, and 19. The internal conductors 8 and 9 are opposed to each other with a specific ceramic layer 4 therebetween to constitute a capacitor section 20. The via-hole joints 16 to 19 and the internal conductors 10 to 12 are alternately connected to each other to constitute an inductor section 21. [Examples] Compositions for ceramic substrates in the present invention will now be described in detail based on examples. Table 1 shows ingredients of the compositions for ceramic substrates produced in the examples. Sample No. Glass Composition Glass Filler MO (% by weight) Al 2 O 3 (% by weight) B 2 O 3 (% by weight) SiO 2 (% by weight) Others (parts by weight) Amount (% by weight) Type Amount (% by weight) Ca O Mg O BaO 1 36 0 0 16 6 42 - 49 Alumina 51 2 45 0 0 13 14 28 - 46 Alumina 54 3 50 0 0 7 9.5 33.5 - 45 Alumina 55 4 37 0 0 20 8 35 - 45 Alumina 55 5 46 0 0 5 7 42 - 47 Alumina 53 6 46 0 0 5 7 42 - 44 Alumina 56 7 35 0 5 12 8 40 - 44 Alumina 56 8 38 0 0 17 5 40 - 48 Alumina 52 9 40 0 0 8 12 40 - 42 Alumina 58 10 42 0 0 5.5 10 42.5 - 48 Alumina 52 11 42 0 0 5 9 44 - 49 Alumina 51 12 42 0 0 9.5 6 42.5 - 48 Alumina 52 13 42 0 0 5.5 10 42.5 - 48 Alumina 42 Forster-ite 10 14 45 0 0 5 7 43 TiO 2 :1.0 48 Alumina 52 15 30 10 0 12 8 40 ZrO 2 :1.0 44 Alumina 56 16 40 0 0 9 8 43 Cr 2 O 3 :1.0 46 Alumina 54 17 39 6 0 5 7 43 CaF 2 :1.0 46 Alumina 54 18 45 0 0 5 7 43 CuO:0.5 46 Alumina 54 19 45 0 0 0 17.5 37.5 CuO:0.25 41 Alumina 59 20 40 0 0 0 16 44 CuO:0.25 45 Alumina 55 21 40 0 0 9 8 43 CuO:0.5 48 Alumina 52 22 37 0 0 20 8 35 Li 2 O:1.0 40 Alumina 60 23 37 0 0 20 8 35 K 2 O:3.0 42 Alumina 58 24 37 0 0 20 8 35 Na 2 O:2.0 41 Alumina 59 25 34 0 0 10 12 44 - 46 Alumina 54 26 52 0 0 8 8 32 - 44 Alumina 56 27 37 0 0 22 11 30 - 48 Alumina 52 28 47 0 0 10 3 40 - 48 Alumina 52 29 38 0 0 11 19 32 - 44 Alumina 58 30 49 0 0 18 7 26 - 46 Alumina 54 31 39 0 0 7 8 46 - 48 Alumina 52 32 35 5 0 5 13 42 - 38 Alumina 62 33 40 0 0 7 13 40 - 52 Alumina 48 First, oxides or carbonates, as starting materials, were prepared so as to satisfy the glass compositions shown in Table 1. The mixture was melted in a Pt crucible for one hour at 1,300 to 1,700°C according to the glass composition. After the melt was quenched, grinding was performed and powdered glass for each sample was obtained. Additionally, in Table 1, with respect to MO (CaO, MgO, and BaO), Al 2 O 3 , B 2 O 3 , and SiO 2 , which were starting materials, the compositional ratios are shown in units of "% by weight", and with respect to other starting materials, such as TiO 2 , the compositional ratios are shown in units of "parts by weight" relative to 100 parts by weight of the total of MO, Al 2 O 3 , B 2 O 3 , and SiO 2 . Next, each powdered glass obtained as described above and a powdered ceramic, such as powdered alumina, as a filler, were mixed at a ratio between the "glass amount" and the "filler amount" shown in Table 1, and a solvent, binder, and a plasticizer were added thereto, followed by fully mixing. By employing a doctor blade process, green sheets were obtained. Based on the green sheets for the individual samples obtained as described above, several forms of specimens were prepared, and evaluations were conducted with respect to "transverse strength", "relative dielectric constant (ε r )", "Q", "coefficient of thermal expansion", and "precipitated crystal phase". Sample No. Firing Temperature °C Transverse Strength MPa ε r Q Coefficient of Thermal Ex-Pansion (ppm/°C) Precipi-tated Crystal Phase 1 900 330 8.5 1,900 7.8 A 2 860 340 8.8 2,500 8.8 A,W 3 870 330 8.7 3,200 8.3 A,W 4 880 325 8.6 2,800 8.3 A,W 5 820 350 7.2 4,000 7.9 A,W 6 880 335 7.6 4,300 7.6 A,W 7 880 335 8.7 2,000 7.5 A 8 890 340 8.7 1,700 8.2 A 9 990 350 8.6 1,700 7.4 A 10 850 310 7.9 2,900 7.4 A,W 11 860 310 7.8 3,200 7.2 A,W 12 880 320 8.2 1,900 7.9 A,W 13 860 300 7.7 3,200 7.7 A,W,F 14 880 330 7.8 5,000 7.6 A,W 15 890 335 8.8 2,500 6.3 A,W 16 860 320 8.5 2,600 7.5 A,W 17 870 315 8.7 2,700 6.7 A,W 18 880 340 7.8 3,700 7.5 A,W 19 890 325 8.4 2,500 6.9 A,W 20 860 315 8.6 2,500 6.0 A,W 21 850 325 8.8 2,600 7.5 A,W 22 880 330 8.7 2,100 8.2 A 23 880 330 8.7 2,100 8.2 A 24 880 330 8.7 1,900 8.2 A 25 1,000 dense sintered compact unobtainable 26 880 250 8.2 1,200 8.5 A,W 27 1,000 dense sintered compact unobtainable 28 1,000 dense sintered compact unobtainable 29 820 300 8.8 1,000 7.4 A 30 880 280 9.1 1,500 8.9 A 31 900 290 7.9 1,700 5.8 A,W 32 1,000 dense sintered compact unobtainable 33 840 280 7.9 2,500 7.1 A First, after a predetermined number of green sheets for each sample were laminated and cut in predetermined sizes, firing was performed at the firing temperature shown in Table 2, and thus a sintered compact was obtained. By an abrasive process, the dimensions thereof were set at 36 mm long, 4 mm wide, and 3 mm thick. With respect to the sintered compact thus obtained for each sample, the transverse strength (three-point bending) was measured according to Japanese Industrial Standard (JIS R1601). The precipitated crystal phase in the sintered compact was also identified by X-ray diffraction analysis. In the column of the precipitated crystal phase in Table 2, "A" represents alumina, "W" represents wollastonite, and "F" represents forsterite. After a predetermined number of green sheets for each sample were laminated, firing was performed at the firing temperature shown in Table 2. The resultant sintered compact was cut by a dicing saw and the dimensions were set at 10 mm long, 3 mm wide, and 3 mm thick. With respect to the sintered compact of such a size, the coefficient of thermal expansion at 25°C to 500°C was measured. Using the green sheets for each sample, a multilayered ceramic circuit component 1 as shown in Fig. 1 was fabricated. That is, holes were made in the green sheets and an Ag-based paste was filled therein to form via-hole joints 13 to 19, and then the Ag-based paste was screen-printed to form the external conductors 5 to 7 and the internal conductors 8 to 12 in predetermined patterns. A predetermined number of the green sheets for forming ceramic layers 4 were laminated, followed by pressing. Firing was performed in air at the firing temperature shown in Table 2, and thus the multilayered ceramic circuit component 1 was obtained. By applying a voltage with a frequency of 1 MHz between the external conductors 5 and 6 in the multilayered ceramic circuit component 1, the electrostatic capacity and Q of the capacitor section 20 were measured, and the relative dielectric constant (ε r ) was calculated. Table 2 shows the relative dielectric constant (ε r ) and Q. In Tables 1 and 2, Sample Nos. 1 to 6 and 8 to 24 correspond to examples which are within the scope of the present invention, and Sample Nos. 7 and 25 to 33 correspond to comparative examples which are out of the scope of the present invention. As is clear from Table 2, in Sample Nos. 1 to 6 and 8 to 24 as examples of the present invention, the transverse strength was as high as 300 to 350 MPa, ε r was in the range from 7.0 to 8.8, Q was as large as 1,400 to 5,000, and the coefficient of thermal expansion was as large as 6.0 or more. Thus, satisfactory characteristics for the ceramic substrate in the ceramic circuit component were exhibited. In Sample Nos. 22 to 24, in which an alkali metal oxide, such as Li 2 O, K 2 O, or Na 2 O, was incorporated in glass, since the softening temperature of the glass was decreased, in comparison with Sample No. 4 having the same glass composition apart from the fact that an alkali metal was not incorporated, in spite of the decreased amount of glass, it was confirmed that firing had been performed at the same temperature. In Sample Nos. 12 to 21, in which TiO 2 , ZrO 2 , Cr 2 O 3 , CaF 2 , or CuO was incorporated in glass, although not shown in Table 2, it was confirmed by X-ray diffraction analysis that the crystallization had been accelerated. In contrast, in Sample No. 25 as comparative example, since the amount of an alkaline-earth metal, namely, M, in glass was low, a dense sintered compact was not obtained when sintered at a temperature of 1,000°C or less. In Sample No. 26, since the M amount in glass was high, the glass became unstable, and even if the firing temperature was optimized, the density of the sintered compact was not increased sufficiently, and thus the transverse strength was as low as 250 MPa. In Sample No. 27, because of the excessively large amount of Al 2 O 3 in glass, a dense sintered compact was not obtained at a firing temperature of 1,000°C or less. In Sample No. 28, because of the excessively small amount of B 2 O 3 in glass, a dense sintered compact was not obtained at a firing temperature of 1,000°C or less. In Sample No. 29, because of the excessively large amount of B 2 O 3 in glass, Q was as low as 1,000. In Sample No. 30, because of the small amount of SiO 2 in glass, the relative dielectric constant (ε r ) was as large as 9.1. In Sample No. 31, because of the excessively large amount of SiO 2 in glass, the coefficient of thermal expansion was as low as 5.8. In Sample No. 32, because of the small amount of glass added, sintering ended in failure at a firing temperature of 1,000°C or less. In Sample No. 33, because of the excessively large amount of glass added, the transverse strength was as low as 280 MPa.

Claims: A composition for a ceramic substrate, comprising a mixture of powdered borosilicate-based glass comprising 5% to 17.5% by weight of B 2 O 3 , 28% to 44% by weight of SiO 2 , 0% to 20% by weight of Al 2 O 3 , and 36% to 50% by weight of CaO; and a powdered alumina ceramic; in which the amount of the powdered borosilicate-based glass being 40% to 49% by weight based on the total amount of the composition for a ceramic substrate, and the amount of the powdered ceramic being 60% to 51% by weight based on the total amount of the composition for a ceramic substrate. A composition for a ceramic substrate, comprising a mixture of powdered borosilicate-based glass comprising 5% to 17.5% by weight of B 2 O 3 , 28% to 44% by weight of SiO 2 , 0% to 20% by weight of Al 2 O 3 and 36% to 50% by weight of MO, where MO comprises CaO as an indispensable component, and MgO and/or BaO as an optional component; and a powdered ceramic; in which the amount of the powdered borosilicate-based glass being 40% to 49% by weight based on the total amount of the composition for a ceramic substrate, and the amount of the powdered ceramic being 60% to 51% by weight based on the total amount of the composition for a ceramic substrate; and the ceramic substrate after sintering comprises a precipitated crystal phase comprising wollastonite. The composition for a ceramic substrate according to claim 2, wherein the powdered ceramic comprises powdered alumina. The composition for a ceramic substrate according to claim 2, wherein the ceramic substrate after sintering further comprises a precipitated crystal phase comprising alumina. The composition for a ceramic substrate according to claims 1 to 4, wherein the coefficient of thermal expansion after sintering is 6.0 ppm/°C or more. The composition for a ceramic substrate according to any one of claims 1 to 5, wherein the borosilicate-based glass contains at least one alkali metal oxide selected from the group consisting of Li 2 O, K 2 O and Na 2 O, the amount of the alkali metal oxide being 5 parts by weight or less relative to 100 parts by weight of the total of the B 2 O 3 , SiO 2 , Al 2 O 3 and MO. The composition for a ceramic substrate according to any one of the claims 1 to 6, wherein the borosilicate-based glass contains at least one compound selected from the group consisting of TiO 2 , ZrO 2 , Cr 2 O 3 , CaF 2 and CuO, the amount of the compound being 5 parts by weight or less relative to 100 parts by weight of the total of the B 2 O 3 , SiO 2 , Al 2 O 3 and MO. A ceramic circuit component comprising a substrate obtained by molding and sintering the composition for a ceramic substrate according to any one of claims 1 to 7, and a conductive circuit provided in association with the substrate. The ceramic circuit component according to claim 8, wherein the conductive circuit comprises at least one metal selected from the group consisting of Ag, Au and Cu as a principal ingredient. A ceramic green sheet comprising the composition for a ceramic substrate according to any one of claims 1 to 7.

Inventors: KISHIDA KAZUO, SHIRATORI AKIRA, TAKAGI HIROSHI, YOKOKURA OSAMU, KISHIDA, KAZUO, SHIRATORI, AKIRA, TAKAGI, HIROSHI, YOKOKURA, OSAMU, Kishida, Kazuo, A(170) Int. Prop. Dpt., Murata, Shiratori, Akira, A(170) Int. Prop. Dpt., Murata, Takagi, Hiroshi, A(170) Int. Prop. Dpt., Murata, Yokokura, Osamu, A(170) Int. Prop. Dpt., Murata
Applicants: MURATA MANUFACTURING CO, MURATA MANUFACTURING CO., LTD.
Application year: 2000
Main classification: C03C8
IPC codes: C03C14, H05K1, C04B35, C03C3, C03C8, H01L23