POLISHING LIQUID COMPOSITION

Abstract: A polishing liquid composition for polishing a surface to be polished comprising an insulating layer and a metal layer selected from (1) to (3): (1) the polishing liquid composition comprising a compound having a structure in which each of two or more adjacent carbon atoms has a hydroxyl group in a molecule, and water; (2) the polishing liquid composition comprising an aliphatic carboxylic acid having 7 to 24 carbon atoms and/or a salt thereof, an etching agent, and water; (3) the polishing liquid composition comprising an amine compound represented by general formula (II) wherein R<3> is a linear or branched alkyl group having 4 to 18 carbon atoms, a linear or branched alkenyl group having 4 to 18 carbon atoms, an aryl group having 6 to 18 carbon atoms, and an aralkyl group having 7 to 18 carbon atoms; each of R<4> and R<5>, which may be identical or different, is hydrogen atom, a linear alkyl group having 1 to 8 carbon atoms or a branched alkyl group having 3 to 8 carbon atoms, or a group represented by H-(OR<6>)z-, wherein R<6> is a linear alkylene group having 1 to 3 carbon atoms, or a branched alkylene group having 3 carbon atoms; and Z is a number of 1 to 20, and/or a salt thereof, an etching agent, and water.

Description: DESCRIPTION POLISHING LIQUID COMPOSITION TECHNICAL FIELD The present invention relates to a polishing liquid composition for polishing a surface to be polished comprising an insulating layer and a metal layer. More specifically, the present invention relates to a polishing liquid composition which is applicable as a means of forming embedded metal interconnection on a semiconductor substrate, a process for polishing, and a process for manufacturing a semiconductor substrate. BACKGROUND ART In the process for manufacturing a semiconductor device, comprising the steps of forming interconnection-shaped recesses on a surface of the insulating film on a semiconductor substrate, sedimenting a metal film made of copper or the like on the insulating film having the recesses, and subjecting the metal film to poHshing treatment by a poHshing device and a poHshing Hquid, thereby aUowing the metal layer to remain only in the recesses to form a metal interconnection layer, wherein Metal Chemical Mechanical PoHshing (hereinafter simply referred to as "metal CMP") is employed for the process of poHshing. However, in the metal CMP, there arise grooves so-caHed dishing on the metal interconnection layer in the recesses of the insulating film, so that the cross-sectional area of the metal interconnection layer is reduced, thereby causing an increase in electric resistivity. This dishing is caused by more excessive poHshing or etching of the surface of the metal interconnection layer than that of the insulating film surface by the poHshing Hquid composition. Especially copper, one of the main metal interconnection, has defects of being excessively etched by the poHshing Hquid composition, so that the dishing is Hkely to be caused. Therefore, there has been desired a poHshing Hquid composition free from defects such as dishing in the metal layer during the formation of interconnection, with retaining an etching action for poHshing the metal film on the insulating film. As a conventional poHshing Hquid, for instance, Japanese Patent Laid-Open Nos. Hei 8-83780 and Hei 11-21546 each discloses a poHshing Hquid comprising benzotriazole or a derivative thereof as a protective film- forming agent for the metal surface in order to prevent the dishing. Since the formed protective film is rigid, when the metal layer is poHshed in the metal CMP, the poHshing speed would become insufficient. In addition, Japanese Patent Laid-Open No. Hei 11-116942 discloses a composition for poHshing, comprising a compound having 1 to 10 alcohoHc hydroxyl groups, or a nitrogen-containing basic compound having 1 to 10 alcohoHc hydroxyl groups. This composition for poHshing has a purpose of reducing particles deposited on a wafer surface in final poHshing of the semiconductor wafer, so that the problems to be solved are different. In addition, Japanese Patent Laid-Open No. Hei 10-44047 discloses a poHshing Hquid comprising an aqueous medium, an abrasive, an oxidizing agent, and an organic acid. However, since the etching action is too strong, the prevention for dishing would be insufficient. Further, Japanese Patent Laid-Open No. Hei 11-195628 discloses a process for poHshing in which a poHshing Hquid is used in combination with ammonium polyacrylate as a substance for suppressing oxidation and etching. However, in the metal CMP in which a metal layer made of copper or the Hke is poHshed, there arises surface roughening of the copper surface caused by ammonium polyacrylate. An object of the present invention is to provide a poHshing Hquid composition capable of maύitaining a poHshing speed of a metal film, suppressing an etching speed, and having an exceUent prevention effect such as dishing of the metal interconnection layer, in a surface to be poHshed comprising an insulating layer and a metal layer; a process for poHshing; and a process for manufacturing a semiconductor substrate. These objects and other objects of the present invention wHl be apparent from the foUowing description. DISCLOSURE OF INVENTION Specifically, the present invention relates to: [l] a poHshing Hquid composition for poHshing a surface to be poHshed comprising an insulating layer and a metal layer, the poHshing Hquid composition comprising a compound having a structure in which each of two or more adjacent carbon atoms has a hydroxyl group in a molecule, and water (hereinafter also referred to "the poHshing Hquid composition 1-1"); [2] a poHshing Hquid composition for poHshing a surface to be poHshed comprising an insulating layer and a metal layer, the poHshing Hquid composition comprising an aHphatic carbox Hc acid having 7 to 24 carbon atoms and/or a salt thereof, an etching agent, and water (hereinafter also referred to "the poHshing Hquid composition 1-2"); [3] a poHshing Hquid composition for poHshing a surface to be poHshed comprising an insulating layer and a metal layer, the poHshing Hquid composition comprising an amine compound represented by the following general formula (II) : R^ R 3 — N ( II ) K- wherein R 3 is a Hnear or branched alkyl group having 4 to 18 carbon atoms, a Hnear or branched alkenyl group having 4 to 18 carbon atoms, an aryl group having 6 to 18 carbon atoms, and an aralkyl group having 7 to 18 carbon atoms; each of R 4 and R 5 , which may be identical or different, is hydrogen atom, a Hnear alkyl group having 1 to 8 carbon atoms or a branched alkyl group having 3 to 8 carbon atoms, or a group represented by H-(OR 6 )z- wherein R 6 is a Hnear alkylene group having 1 to 3 carbon atoms, or a branched alkylene group having 3 carbon atoms; and Z is a number of 1 to 20, and/or a salt thereof, an etching agent, and water (hereinafter also referred to "the poHshing Hquid composition 1-3"); [4] the poHshing Hquid composition according to any one of items [l] to [3] above, further comprising an oxidizing agent (hereinafter also referred to "the poHshing Hquid composition 2"); [5] the poHshing Hquid composition according to any one of items [l] to [4] above, further comprising an abrasive (hereinafter also referred to "the poHshing Hquid composition 3"); [6] a process for poHshing a semiconductor substrate, comprising poHshing a surface to be poHshed comprising an insulating layer and a metal layer using the poHshing Hquid composition of any one of items [l] to [5], thereby smoothening the semiconductor substrate; and [7] a process for manufacturing a semiconductor substrate comprising poHshing a surface to be poHshed comprising an insulating layer and a metal layer using the poHshing Hquid composition of any one of items [l] to [5], thereby smoothening the semiconductor substrate. BEST MODE FOR CARRYING OUT THE INVENTION As mentioned above, the poHshing Hquid composition of the present invention is a poHshing Hquid composition for poHshing a surface to be poHshed comprising an insulating layer and a metal layer, and has the foUowing three embodiments. Embodiment l: A poHshing Hquid composition comprising a compound having a structure in which each of two or more adjacent carbon atoms has a hydroxyl group in a molecule, and water. Embodiment 2- A poHshing Hquid composition comprising an aHphatic carboxyHc acid having 7 to 24 carbon atoms and/or a salt thereof, an etching agent and water. Embodiment 3: A poHshing Hquid composition comprising an amine compound represented by the foUowing general formula (II): R" . / R° N; ( II ) X R 5 wherein R 3 is a Hnear or branched alkyl group having 4 to 18 carbon atoms, a Hnear or branched alkenyl group having 4 to 18 carbon atoms, an aryl group having 6 to 18 carbon atoms, and an aralkyl group having 7 to 18 carbon atoms; arid each of R 4 and R 5 , which may be identical or different, is hydrogen atom, a Hnear alkyl group having 1 to 8 carbon atoms or a branched alkyl group having 3 to 8 carbon atoms, or a group represented by H-(OR 6 )z- wherein R 6 is a Hnear alkylene group having 1 to 3 carbon atoms, or a branched alkylene group having 3 carbon atoms; and Z is a number of 1 to 20, and/or a salt thereof, an etching agent, and water. Embodiment 1 In this embodiment, one of the great features resides in the use of a compound having a structure in which each of two or more adjacent carbon atoms has a hydroxyl group in a molecule (hereinafter simply referred to as "hydroxyl group-containing compound"). By the use of the poHshing Hquid composition comprising the hydroxyl group-containing compound, the poHshing speed can be maintained, and excessive etching of a metal film in the metal layer can be prevented, so that there is exhibited an exceUent effect that a poHshing surface without defects such as dishing can be obtained. In the hydroxyl group-containing compound, from the viewpoint of maintaining the poHshing speed and suppressing dishing, the number of adjacent carbon atoms having a hydroxyl group in a molecule is 2 or more, preferably from 2 to 10, more preferably from 2 to 7, especially preferably from 2 to 4. In addition, as the structure of the hydroxyl group-containing compound, it is particularly preferable that the structure in which each of two or more adjacent carbon atoms has a hydroxyl group is present in the termin al p ortion of a molecule . Examples thereof include a compound represented by the formula (I) : R i -X-(CH 2 ) q -[CH(OH)]n-CH 2 OH (I) wherein R 1 is a hydrocarbon group having 1 to 24 carbon atoms; X is a group represented by (CH2)m, wherein m is 0 or 1, oxygen atom, sulfur atom, COO group, OCO group, a group represented by NR 2 or 0(R 2 0)P(0)0, wherein R 2 is hydrogen atom or a hydrocarbon group having 1 to 24 carbon atoms! q is 0 or l; and n is an integer of 1 to 4. In the formula (I), the hydrocarbon group of R 1 may be either aHphatic or aromatic group, and the aHphatic group is preferable. The structure of the aHphatic group may be saturated or unsaturated, or Hnear or branched. From the viewpoint of suppressing dishing, a saturated structure is preferable, and a Hnear structure is preferable. In addition, the number of carbon atoms of the above hydrocarbon groups is preferably 1 or more, from the viewpoint of suppressing the dishing, and the number of carbon atoms is preferably 24 or less, from the viewpoint of the solubiHty of the compound represented by the formula (I) in water. The number of carbon atoms is more preferably from 1 to 18, still more preferably from 2 to 12. Each of m and q is preferably 1. The number of carbon atoms of R 2 is preferably 12 or less, more preferably 8 or less, still more preferably 4 or less, from the viewpoint of suppressing the dishing. Especially, R 2 is preferably hydrogen atom or methyl group, n is preferably 2 or less, more preferably 1, from the viewpoint of suppressing the dishing. In addition, the hydroxyl group-containing compound may have various functional groups other than hydroxyl group in a molecule. From the viewpoints of maintaining the poHshing speed and suppressing the dishing, those compounds which do not contain carbox l group, sulfonate group, primary amino group or phenoHc hydroxyl group are preferable. The hydroxyl group-containing compound has a molecular weight of preferably 5000 or less, more preferably 1000 or less, especiaUy preferably 500 or less, from the viewpoints of maintaining the poHshing speed and suppressing the dishing. The hydroxyl group-containing compound has an acid dissociation constant pKa in an aqueous solution of preferably 8 or more, more preferably 9 or more, especiaUy preferably 10 or more, from the viewpoints of maintaining the poHshing speed and suppressing the dishing. However, in a case where the hydroxyl group-containing compound has two or more dissociable functional groups in a molecule, pKa referred herein is a first dissociation constant. In addition, the solubiHty of the hydroxyl group- containing compound at a pH usable for a poHshing Hquid composition is such that the compound dissolves preferably at 0.5% by weight or more, more preferably at 1.0% by weight or more, in water at 25°C, from the viewpoint of formulating the hydroxyl group containing compound in an aqueous medium. Concrete examples of these hydroxyl group-containing compounds include alkanediols such as 1,2-butanediol, 1,2-heptanediol, 1,2-hexanediol ("a" in Table 1 mentioned below), and 1,2-octanediol; alkanetriols such as 1,2,3-hexanetriol, 1,2,6-hexanetriol, and 1,2,3-heptanetriol; glyceryl ethers such as butyl glyceryl ether ("b" in Table 1 mentioned below), pentyl glyceryl ether, hexyl glyceryl ether, and octyl glyceryl ether; monoglycerides such as glyceryl monobutanoate, glyceryl monopentanoate, glyceryl monohexanoate, glyceryl monoheptanoate ("c" in Table 1 mentioned below), and glyceryl monooctanoate; partially esterified products prepared by carrying out esterification reaction of gluconic acid and an alcohol such as hexyl alcohol; compounds prepared by reacting glycidol with a monoalkylamine such as hexylamine or a dialkylamme such as dipropylamine ("d" in Table 1 mentioned below); diesters of tartaric acid such as diethyl tartrate, dibutyl tartrate, dipropyl tartrate ("e" in Table 1 mentioned below), and dihexyl tartrate! 1,2-cyclohexanediol, and the Hke. Among them, from the viewpoints of maintaining the poHshing speed and suppressing the dishing, the alkanediols and the glyceryl ethers are preferable. These hydroxyl group-containing compounds may be used alone or in admixture of two or more kinds. The amount of the hydroxyl group-containing compounds formulated is preferably from 0.01 to 30% by weight, more preferably from 0.05 to 5% by weight, stiU more preferably from 0.1 to 3% by weight, of the poHshing Hquid composition 1-1, from the viewpoints of maintaining the poHshing speed and suppressing the dishing. Water usable in this embodiment is used as a medium. Its amount formulated is preferably from 60 to 99.99% by weight, more preferably from 70 to 99.4% by weight, stiU more preferably from 80 to 99.0% by weight, of the poHshing Hquid composition 1-1, from the viewpoint of efficiently poHshing the substrate to be poHshed. The poHshing Hquid composition 1-1 of this embodiment having the composition described above has a pH of preferably from 2 to 11, more preferably from 2 to 7, stiU more preferably from 2 to 6, especiaUy preferably 3 to 5, from the viewpoints of keeping a poHshing speed at a practical level, suppressing the dishing, and removing fine scratch damages on the surface. In order to adjust the pH within the above ranges, an inorganic acid such as nitric acid or sulfuric acid, an organic acid, a basic substance such as potassium hydroxide, sodium hydroxide, ammonia, or an organic amine can be appropriately added, as occasion demands. In addition, the poHshing Hquid composition 1-1 of this embodiment may further comprise an organic acid. In this embodiment, since the organic acid is used, the organic acid forms a complex with or binds to various metals, especiaUy copper, constituting the metal layer, so that the metal layer is made brittle, whereby exhibiting an effect that the removal of the metal layer is made easy during poHshing. In addition, especiaUy, the organic acid can be used in combination with a compound having a structure in which each of two or more adjacent carbon atoms has a hydroxyl group in a molecule, whereby maintaining the poHshing speed and preventing the dishing. The organic acid is an organic compound showing acidic property. These organic compounds showing acidic property include those having functional groups such as carboxyl group, phosphonic group, phosphinic group, sulfonic group, sulfinic group, phenol group, enol group, thiophenol group, imido group, oxime group, aromatic sulfamide groups, and primary and secondary nitro groups. The organic acid usable in this embodiment has a molecular weight of preferably 1000 or less, more preferably 500 or less. The organic acid having carboxyl group includes monocarboxyHc acids having 1 to 24 carbon atoms, dicarboxyHc acids, hydroxycarboxyUc acids and aminocarboxyHc acids are preferable, from the viewpoint of the solubiHty in water. The number of carbon atoms is more preferably 1 to 18 carbon atoms, stiU more preferably 1 to 12 carbon atoms, especiaUy preferably 1 to 8 carbon atoms, most preferably 1 to 6 carbon atoms. Concrete examples thereof include monocarboxyHc acids, such as formic acid, acetic acid, propionic acid, butyric acid, valerianic acid, caproic acid, and pyruvic acid; dicarboxyHc acids such as oxaHc acid, malonic acid, succinic acid, glutaric acid, and adipic acid; hydroxycarboxyUc acids such as gluconic acid, tartaric acid, glycoHc acid, lactic acid, citric acid, and malic acid; aminocarboxyHc acid such as nitrilotriacetic acid. The organic acid having phosphonic group includes aminotri(methylenephosphonic acid), l-hydroxyethyHdene-l,l-diphosphonic acid, ethylenediaminetetra(methylenephosphonic acid), hexamethylenediaminetetra(methylenephosphonic acid), (Hethylenetriaminepenta(methylenephosphonic acid); the organic acid having phosphinic group includes ethyl phosphite, and the Hke; the organic acid having sulfonic group includes methanesulfonic acid, benzenesulfonic acid, j>-toluenesulfonic acid, naphthalenesulfonic acid, and the Hke; the organic acid having sulfinic group includes benzenesulfinic acid, jtλ-toluenesuhinic acid, and the Hke. Among them, the organic acids having carboxyl group are preferable. More concretely, monocarboxyHc acids, dicarboxyHc acids, hydroxycarboxyUc acids and aminocarboxyHc acids are preferable, and acetic acid, oxaHc acid, succinic acid, glycoHc acid, lactic acid, citric acid, maHc acid, tartaric acid, gluconic acid and nitrilotriacetic acid are more preferable, and glycoHc acid and gluconic acid are stiU more preferable. These organic acids may be used alone or in admixture of two or more kinds. The organic acid is used in a state in which water is used as a medium in the poHshing Hquid composition 1-1. The amount of the organic acid formulated in the poHshing Hquid composition 1-1 can be widely selected for the purposes of securing the poHshing speed at a practical level to remove the metal layer, and preventing excessive etching of the metal layer. The amount of the organic acid formulated is, for instance, preferably from 0.1 to 10% by weight, more preferably from 0.2 to 8% by weight, stiU more preferably from 0.3 to 5% by weight. In addition, among the above organic acids, a compound capable of dissolving and etching a metal, especiaUy copper in the copresence of an aqueous medium, and having an etching speed "a" of 3 A/min or more, as obtained by the fallowing etching test A can be used as an etching agent. SpecificaUy, in the etching test A, first a copper ribbon (commercially available from K.K. Nirako; thickness: 0.10 mm, width: 6 mm) having a length of 100 mm is furnished, and the surface dirt or the Hke is wiped of with a sheet of paper. Thereafter, the copper ribbon is subjected to ultrasonic cleaning for one minute in a state of being immersed in normal hexane, and thereafter the surface is sufficiently degreased and dried. Subsequently, its metal test piece is coUed into a heHcal form so that an entire surface of the ribbon is immersed in the poHshing Hquid, to give a metal test piece before test. The weight before immersion is determined by accurate balance. Next, the etching agent is diluted to give a 2% by weight aqueous solution thereof. Further, 100 g of the etching solution of which pH is adjusted to 8 ± 0.5 with aqueous ammonia is furnished in a 150 cc beaker (K.K. Teraoka, 150 cc disposable cup), and the above metal test piece is immersed at 25°C for 12 hours. During immersion, the etching solution is stirred with a magnetic stirrer, to an extent that the copper ribbon rotates along with the flow of the etching solution. After the test, the copper ribbon surface is sufficiently wiped off, and its weight is again determined by accurate balance, to give a weight after the test. The amount of reduced thickness of copper is calculated from the weight loss of the copper ribbon before and after the test, and the resulting amount is divided by the etching time period to determine an etching speed "a." From the viewpoint of obtaining a practical poHshing speed, an etching agent having an etching speed "a" obtainable from the above etching test of 3 A/min or more is preferable, more preferably 5 A/min or more, stiU more preferably 10 A/min or more. The etchin speed "a" in this case may be an etching speed of two or more etching agents used in combination. In addition, as the etching agent, an inorganic acid which is capable of dissolving and etching a metal, especiaUy copper, in the copresence of an aqueous medium, and having an etching speed "a" obtainable from the above etching test A of 3 A/min or more can be used. Ariiong the organic acids, from the viewpoint of having an appropriate etching speed, preferable etching agents include one or more compounds selected from the group consisting of the foUowing A to D. Also, the foUowing inorganic acids E are usable as an etching agent. A: aHphatic organic acids having 6 or less carbon atoms and one to three carboxyl groups; B: aromatic organic acids having 7 to 10 carbon atoms and one to four carboxyl groups; C: organic acids having 6 or less carbon atoms and one to four phosphonic groups; D: polyaminocarboxyHc acids having in a molecule two or more structures represented by the formula (III): — N-CH 2 COOH (HI) and E: inorganic acids. Concretely, the aHphatic organic acid of the group A having 6 or less carbon atoms and one to three carboxyl groups includes monocarboxyHc acids, such as formic acid, acetic acid, and propionic acid; polycarboxyHc acids, such as oxaHc acid, malonic acid, succinic acid, glutaric acid, adipic acid, and tricarbaUyUc acid; hydroxycarboxyUc acids such as glycoHc acid, lactic acid, 2-hydroxypropionic acid, maUc acid, tartaric acid, citric acid, and gluconic acid; amino acids such as glycine, alanine, and aspartic acid; and the Hke. The aromatic organic acid of the group B having 7 to 10 carbon atoms and one to four carboxyl groups includes benzoic acid, phthaUc acid, trimelHtic acid, pyromeUitic acid, mandeHc acid, saHcyUc acid, and the Hke. The organic acid of the group C having 6 or less carbon atoms and one to four phosphonic groups includes phosphonic acids such as methylphosphonic acid and phenylphosphonic acid; phosphinic acids such as methylphosphinic acid and phenylphosphinic acid; phosphonic acid esters such as methyl ester of phosphonic acid; aminophosphonic acids such as aminotri(methylenephosphonic acid) and 1-hydroxyethyUdene-l-diphosphonic acid; and the Hke. The polyaminocarboxyHc acid of the group D having in a molecule two or more structures represented by the formula (III) includes ethylenediaminetetraacetic acid, nitrilotriacetic acid, diethylenediaminepentaacetic acid, triethylenetetraminehexaacetic acid, hydroxyethylethylenediaminetetraacetic acid, and the Hke. The inorganic acid of the group E includes hydrochloric acid, perchloric acid, sulfuric acid, nitric acid, phosphoric acid, phosphonic acid, phosphinic acid, and the Hke. Among them, from the viewpoint of the poHshing speed, preferable are the polycarboxyHc acids or hydroxycarboxyUc acids belonging to the group A or B; aminophosphonic acids belonging to the group C; polyaminocarboxyHc acids of the group D having in a molecule two or more structures represented by the formula (III); and hydrochloric acid, sulfuric acid, nitric acid, and phosphoric acid belonging to the group E. More preferable are oxaHc acid, succinic acid, glycoHc acid, lactic acid, citric acid, maUc acid, gluconic acid, phthaUc acid, aminotri(methylenephosphonic acid), 1-hydroxyethyHdene-l-diphosphonic acid, ethylenediaminetetraacetic acid, hydrochloric acid, and sulfuric acid. These etching agents may be used alone or in admixture of two or more kinds. In this embodiment, glycoHc acid and gluconic acid are especiaUy preferable. These etching agents, for instance, have the foUowing etching speed "a": GlycoHc acid, 60 A/min; citric acid, 25 A/min; phthaUc acid, 50 A/min; aminotriXmethylenephosphonic acid), 10 A/min; ethylenediaminetetraacetic acid, 30 A/min; acetic acid, 70 A/min, glycine, 40 A/min; hydrochloric acid, 400 A/min; and sulfuric acid, 100 A/min. When the etching agent usable in this embodiment is used in the preparation of a poHshing Hquid composition, with proviso that the composition does not comprise the hydroxyl group-containing compound, in which an oxidizing agent, abrasive grains, and the Hke are further copresent, it is preferable to adjust the kinds, contents, and the Hke, so that the etching Hquid composition has an etching speed "b" obtainable from the foUowing etching test B of 20 A/min or more. The etching test B is carried out in the same procedures as in the etching test A, except that the copper ribbon is immersed in a poHshing Hquid composition comprising, as an etching solution of the etching test A, water, an abrasive and an etching agent, and, if necessary, an oxidizing agent, at room temperature (25°C) for 2 hours, and that the pH is adjusted to 4.0 ± 0.5. The etching speed obtained by the etching test B is referred to as "etching speed V." From the viewpoint of obtaining a practical poHshing speed, the etching speed "b" obtainable from the above etching test B is preferably 20 A/min or more, more preferably 30 A/min or more, stiU more preferably 50 A/min or more. The etching speed "b" in this case may be an etching speed of a poHshing Hquid composition in which two or more etching agents are used in combination. In this embodiment, since the etching agent is used, the etching agent forms a complex with or binds to various metals, especiaUy copper, constituting the metal layer, so that the removal of the metals is made easy as water-soluble salts and/or chelated compounds, whereby exhibiting an effect that the poHshing speed of the metal layer is increased during poHshing. The amount of the etching agent formulated in the poHshing Hquid composition 1-1 can be variously selected in order to secure the poHshing speed at a practical level to remove the metal layer, and to prevent excessive etching of the metal layer. The amount of the etching agent formulated is preferably from 0.1 to 10% by weight, more preferably from 0.2 to 8% by weight, stiU more preferably from 0.3 to 5% by weight, of the poHshing Hquid composition 1-1. Embodiment 2 In this embodiment, one of the largest features resides in that the above aHphatic carboxyHc acid having 7 to 24 carbon atoms and/or a salt thereof and the etching agent are used in combination. Since the aHphatic carboxyHc acid having 7 to 24 carbon atoms and/or a salt thereof has an action of lowering the etching speed, the poHshing speed at a practical level can be maintained and excessive etching of the metal film in the metal layer can be prevented by the use of a poHshing Hquid composition comprising these compounds and the etching agent. Therefore, there is exhibited an exceUent effect that the poHshing surface without defects such as dishing can be obtained. From the viewpoints of maintaining the poHshing speed and suppressing the dishing, the aHphatic carboxyHc acid and/or a salt thereof has 7 to 24 carbon atoms. Further, from the viewpoints of keeping the solubiHty in the poHshing Hquid, the low-foamabiHty, and the poHshing speed at practical levels, and suppressing the dishing, these compounds have preferably from 7 to 20 carbon atoms, more preferably from 7 to 16 carbon atoms, stiU more preferably from 7 to 12 carbon atoms, especiaUy preferably from 7 to 10 carbon atoms. In addition, the hydrocarbon group of the aHphatic carboxyHc acid and/or a salt thereof may be saturated or unsaturated, or Hnear or branched. In addition, the salts of the aHphatic carboxyHc acids may be any of ammonium salts, salts of organic amines, and alkaH metal salts. From the viewpoint of preventing staining of the semiconductors, ammonium salts, and salts of organic amines such as salts of monoethanolamine, salts of diethanolamine, salts of triethanolamine, and salts of triethylamine. Concrete examples of these aHphatic carboxyHc acids and salts thereof include Hnear, saturated aHphatic carboxyHc acids such as heptanoic acid, octanoic acid, nonanoic acid, decanoic acid, lauric acid, myristic acid, paHnitic acid, stearic acid, and eicosanoic acid; Hnear, unsaturated aHphatic carboxyHc acids such as heptenoic acid, octenoic acid, decenoic acid, dodecenoic, and oleic acid; branched, saturated aHphatic carboxyHc acids such as 2-methylhexanoic acid, 2-ethylhexanoic acid, 3,5-dimethylhexanoic acid, 3,5,5-trimethylhexanoic acid, and isodecanoic acid; and ammonium salts, salts of organic amines, alkaH metal salts of these aHphatic carboxyHc acids, and the Hke. Among them, from the viewpoints of the poHshing speed and the suppression of the dishing, the Hnear or branched, saturated aHphatic carboxyHc acids and ammonium salts thereof are preferable, and from the viewpoint of the solubility in the poHshing Hquid and the low foamabiHty, heptanoic acid or ammonium salt thereof, octanoic acid or ammonium salt thereof, nonanoic acid or ammonium salt thereof, and decanoic acid or ammonium salt thereof are especiaUy preferable. These aHphatic carboxyHc acids having 7 to 24 carbon atoms and salts thereof may be used alone or in admixture of two or more kinds. The amount of the aHphatic carboxyHc acid and a salt thereof formulated is preferably from 0.01 to 30% by weight, more preferably from 0.02 to 10% by weight, stiU more preferably from 0.03 to 5% by weight, of the poHshing Hquid composition 1-2, from the viewpoint of maintaining the poHshing speed, and suppressing the dishing. The etching agent usable in this embodiment is capable of dissolving and etching a metal, especiaUy copper, in the copresence of an aqueous medium, and is a compound having an etching speed "a" of 3 A/min or more, as obtained by the etching test A described in Embodiment 1. From the viewpoint of obtaining a practical poHshing speed, an etching agent having an etching speed "a" obtainable from the above etching test A of 3 A/min or more is preferable, more preferably 5 A/min or more, stiU more preferably 10 A/min or more. The etching speed "a" in this case may be an etching speed of two or more etching agents used in combination. Preferable etching agents include the same ones as those in Embodiment 1 mentioned above. These etching agents may be used alone or in admixture of two or more kinds. In this embodiment, glycoHc acid, citric acid, and arninotri(methylenephosphonic acid) are especiaUy preferable. IncidentaUy, the etching speed "a" of the aHphatic carboxyHc acid having 7 to 24 carbon atoms is 2 A/min or less, and as compared to the etching agent, the etching strength is none or almost not found. When the etching agent usable in this embodiment is used in the preparation of a poHshing Hquid composition, with proviso that the composition does not comprise the aHphatic carboxyHc acid having 7 to 24 carbon atoms and/or a salt thereof, in which an oxidizing agent, abrasive grains, and the Hke are further copresent, it is preferable to adjust the kinds, contents, and the Hke, so that the poHshing Hquid composition has an etching speed "c" obtainable from the foUowing etching test C of 20 A/min or more. The etching test C is carried out in the same procedures as in the etching test A, except that the copper ribbon is immersed in a poHshing Hquid composition comprising, as an etching solution of the etching test A, water, an abrasive and an etching agent, and, if necessary, an oxidizing agent, at room temperature (25°C) for 2 hours. The etching speed obtained by the etching test C is referred to as "etching speed 'c'." From the viewpoint of obtaining a practical poHshing speed, the etching speed "c" obtainable from the above etching test C is preferably 20 A/min or more, more preferably 30 A/min or more, still more preferably 50 A/min or more. The etching speed "c" in this case may be an etching speed of a poHshing Hquid composition in which two or more etching agents are used in combination. In this embodiment, since the etching agent is used, the etching agent forms a complex with or binds to various metals, especiaUy copper, constituting the metal layer, so that the removal of the metals is made easy as water-soluble salts and/or chelated compounds, whereby exhibiting an effect that the poHshing speed of the metal layer is increased during poHshing. The amount of the etching agent formulated in the poHshing Hquid composition 1-2 can be variously selected in order to secure the poHshing speed at a practical level to remove the metal layer, and to prevent excessive etching of the metal layer. The amount of the etching agent formulated is preferably from 0.1 to 10% by weight, more preferably from 0.2 to 8% by weight, stiU more preferably from 0.3 to 5% by weight, of the poHshing Hquid composition 1-2. Water usable in this embodiment is used as a medium. The amount of water formulated is preferably from 60 to 99.89% by weight, more preferably from 70 to 99.4% by weight, stiU more preferably from 80 to 99% by weight, of the poHshing Hquid composition 1-2, from the viewpoint of efficiently poHshing the substrate to be poHshed. The poHshing Hquid composition 1-2 of this embodiment having the composition described above has a pH of preferably 10 or less, more preferably from 2 to 9.5, stiU more preferably from 4 to 9, especiaUy preferably from 7 to 9, from the viewpoints of keeping a poHshing speed at a practical level, suppressing the dishing, and removing fine scratch damages on the surface. In order to adjust the pH within the above ranges, an inorganic acid such as nitric acid or sulfuric acid, an organic acid, a basic substance such as potassium hydroxide, sodium hydroxide, ammonia, or an organic amine can be appropriately added, as occasion demands. Embodiment 3 In this embodiment, one of the largest features resides in that the above amine compound represented by the general formula (II) and/or a salt thereof and the etching agent are used in combination. The poHshing speed at a practical level can be maintained and excessive etching of the metal film of the metal layer can be prevented by the use of a poHshing Hquid composition comprising the amine compound and/or a salt thereof, and the etching agent. Therefore, there is exhibited an exceUent effect that the poHshing surface without defects such as dishing can be obtained. The above amine compound represented by the general formula (II) and/or a salt thereof usable in this embodiment is preferable, from the viewpoints of maintaining the poHshing speed and suppressing the dishing. Further, from the viewpoints of keeping the low foamabiHty and the poHshing speed at practical levels and suppressing the dishing, in the formula, R 3 is preferably a Hnear or branched, alkyl or alkenyl group having 5 to 14 carbon atoms, more preferably a Hnear or branched, alkyl or alkenyl group having 6 to 12 carbon atoms, stiU more preferably a Hnear or branched, alkyl or alkenyl group having 7 to 10 carbon atoms. Each of R 4 and R 5 is preferably hydrogen, a Hnear alkyl group having 1 or 2 carbon atoms, a group represented by H-(OR 6 ) z - wherein R 6 is an alkylene group having 2 carbon atoms and Z is a number from 1 to 4, and more preferably hydrogen atom, methyl group and hydroxyethyl group. In addition, the salt of the amine compound may be either a salt with an inorganic acid or a salt with an organic acid, and those which are a salt with an inorganic acid or organic acid which is usable as an etching agent are preferable. Further, from the viewpoint of preventing staining of the semiconductor, salts of organic acids are more preferable among the etching agents. Concrete examples of these amine compounds and salts thereof include Hnear monoaUcylamines such as butylamine, pentylamine, hexylamine, heptylamine, octylamine, nonylamine, decylamine, laurylamine, myristylamine, and stearylamine; Hnear monoalkenylamines such as oleylamine; branched monoalkylamines such as 2-ethylhexylamine; diaLkylamines such as dihexylamine and dioctylamine; trialkylamines such as dimethyloctylamine, dim ethyl decylamine, and dimethyldo decylamine; alkylalkanolamines such as octyldiethanolamine, decyldiethanolamine, and dodecyldiethanolamine; and carboxylates, phosphates, hydrochlorides, sulfates, nitrates, and the Hke of these amine compounds. Among them, from the viewpoints of maintaining the poHshing speed and suppressing the dishing, monoalkylamines, monoalkylcHmethylamines, and monoalkyldiethanolamines, each of which is Hnear or branched, and carboxylates thereof are preferable. Further, from the viewpoint of the low foamability, more preferable are heptylamine, octylamine, nonylamine, dimethyloctylamine, dimethyldecylamine, dimethyldodecylamine octyldiethanolamine, decyldiethanolamine, and carboxylates thereof. These amine compounds and salts thereof may be used alone or in admixture of two or more kinds. The amount of the amine compound and a salt thereof formulated is preferably from 0.01 to 30% by weight, more preferably from 0.02 to 10% by weight, stiU more preferably from 0.03 to 5% by weight, of the poHshing Hquid composition 1-3, from the viewpoint of maintaining the poHshing speed, and suppressing the dishing. The etching agent usable in this embodiment is capable of dissolving and etching a metal, especiaUy copper, in the copresence of an aqueous medium, and is a compound having an etching speed "a" of 3 A/min or more, as obtained by the etching test A described in Embodiment 1. From the viewpoint of obtaining a practical poHshing speed, an etching agent having an etching speed "a" obtainable from the above etching test A of 3 A/min or more is preferable, more preferably 5 A/min or more, stiU more preferably 10 A/min or more. The etching speed "a" in this case may be an etching speed of two or more etching agents used in combination. Preferable etching agents include the same ones as those in Embodiment 1 mentioned above. These etching agents may be used alone or in admixture of two or more kinds. In this embodiment, glycoHc acid, citric acid, and aminotri(methylenephosphonic acid) are especiaUy preferable. When the etching agent usable in this embodiment is used in the preparation of a poHshing Hquid composition, with proviso that the composition does not comprise the above amine compound or a salt thereof, in which an oxidizing agent, abrasive grains, and the Hke are further copresent, it is preferable to adjust the kinds, contents, and the Hke, so that the poHshing Hquid composition has an etching speed "c" obtainable from the etching test C described in Embodiment 2 of 20 A/min or more. From the viewpoint of obtaining a practical poHshing speed, the etching speed "c" obtainable from the above etchi test C is preferably 20 A/min or more, more preferably 30 A/min or more, stiU more preferably 50 A/min or more. The etching speed "c" in this case may be an etching speed of a poHshing Hquid composition in which two or more etching agents are used in combination. In this embodiment, since the etching agent is used, the etching agent forms a complex with or binds to various metals, especiaUy copper, constituting the metal layer, so that the removal of the metals is made easy as water-soluble salts and/or chelated compounds, whereby exhibiting an effect that the poHshing speed of the metal layer is increased during poHshing. The amount of the etching agent formulated in the poHshing Hquid composition 1-3 can be variously selected in order to secure the poHshing speed at a practical level to remove the metal layer, and to prevent excessive etching of the metal layer. The amount of the etching agent formulated is preferably from 0.1 to 10% by weight, more preferably from 0.2 to 8% by weight, stiU more preferably from 0.3 to 5% by weight, of the poHshing Hquid composition 1-3. Water usable in this embodiment is used as a medium. The amount thereof is preferably from 60 to 99.89% by weight, more preferably from 70 to 99.4% by weight, still more preferably from 80 to 99% by weight, of the poHshing Hquid composition 1-3, from the viewpoint of efficiently poHshing the substrate to be poHshed. The poHshing Hquid composition 1-3 of this embodiment having the composition described above has a pH of preferably 10 or less, more preferably from 2 to 9.5, still more preferably from 4 to 9, especiaUy preferably from 5 to 9, from the viewpoints of keeping a poHshing speed at a practical level, suppressing the dishing, and removing fine scratch damages on the surface. In order to adjust the pH within the above ranges, an inorganic acid such as nitric acid or sulfuric acid, an organic acid, a basic substance such as potassium hydroxide, sodium hydroxide, ammonia, or an organic amine can be appropriately added, as occasion demands. The poHshing Hquid composition 2 comprises one of the poHshing Hquid compositions 1-1 to 1-3 (hereinafter coUectively referred to as "the poHshing Hquid composition 1"), and further comprising an oxidizing agent. The oxidizing agent usable in the present invention refers to those oxidizing a metal. In the present invention, it is thought that the metal layer is oxidized by the use of the oxidizing agent, whereby an effect of accelerating the mechanical poHshing effect of the metal layer is exhibited. The oxidizing agent includes, peroxides; permanganic acid or salts thereof; chromic add or salts thereof; nitric acid or salts thereof, peroxo acid or salts thereof; oxyadd or salts thereof; metal salts; sulfuric acid, and the Hke. As concrete examples thereof, the peroxide indudes hydrogen peroxide, sodium peroxide, barium peroxide, and the Hke; the permanganic add or salts thereof indude potassium permanganate, and the Hke; chromic acid or salts thereof include metal salts of chromic acid, metal salts of dichromic acid, and the Hke; the nitrates include iron (III) nitrate, ammonium nitrate, and the Hke; the peroxo acid or salts thereof include peroxo disulfuric add, ammonium peroxodisulfate, metal salts of peroxodisulfuric acid, peroxophosphoric acid, peroxosulfuric acid, sodium peroxoborate, performic add, peracetic acid, perbenzoic acid, perphthaHc acid, and the Hke; the oxyacid or salts thereof include hypochlorous acid, hypobromous add, hypoiodous acid, chloric acid, bromic acid, iodic acid, perchloric acid, sodium hypochlorite, calcium hypochlorite, and the like, ' metal salts include iron (III) chloride, iron (III) sulfate, iron (III) citrate, ammonium iron (III) sulfate, and the Hke. Among the oxidizing agents, hydrogen peroxide, iron (III) nitrate, peracetic acid, ammonium peroxodisulfate, iron (III) sulfate and ammonium iron (III) sulfate are preferable, and espedaUy hydrogen peroxide is preferable. These oxidizing agents may be used alone or in admixture of two or more kinds. The oxidizing agent is used in a state in which water is used as a medium in the poHshing Hquid composition 2. The amount of the oxidizing agent formulated is preferably from 0.1 to 60% by weight, more preferably from 0.2 to 50% by weight, stiU more preferably from 0.3 to 30% by weight, espedaUy preferably from 0.3 to 10% by weight, of the poHshing Hquid composition 2, from the viewpoint of obtaining the poHshing speed at a practical level by rapid oxidation of the metal layer. In addition, when the poHshing Hquid composition 2 is prepared from the poHshing Hquid composition 1—1, the amount of the hydroxyl group- containing compound formulated is preferably from 0.01 to 30% by weight, more preferably from 0.05 to 5% by weight, stiU more preferably from 0.1 to 3% by weight, of the poHshing Hquid composition 2. The amount of water formulated is preferably from 40 to 99.89% by weight, more preferably from 70 to 99.4% by weight, stiU more preferably from 80 to 99% by weight, of the poHshing Hquid composition 2. The pH of the poHshing Hquid composition 2 having the above composition, which is the same as the poHshing Hquid composition 1-1, is preferably from 2 to 11, more preferably from 2 to 7, still more preferably 2 to 6, especiaUy preferably from 3 to 5, from the viewpoints of keeping the poHshing speed at a practical level, suppressing the d shing, and removing the fine scratch damages on the surface. In order to adjust the pH to the above-specified range, there may be added at an appropriate timing an inorganic acid such as nitric acid or sulfuric acid, an organic acid, or a basic substance such as potassium hydroxide, sodium hydroxide, ammonia, or an organic amine. In addition, when the poHshing Hquid composition 2 is prepared from the poHshing Hquid composition 1-2, the amount of the aHphatic carboxyHc acid having 7 to 24 carbon atoms and/or salts thereof formulated is preferably from 0.01 to 30% by weight, more preferably from 0.02 to 10% by weight, stiU more preferably from 0.03 to 5% by weight, of the poHshing Hquid composition 2. The amount of the etching agent formulated is preferably from 0.1 to 10% by weight, more preferably from 0.2 to 8% by weight, still more preferably from 0.3 to 5% by weight, of the poHshing Hquid composition 2. The amount of water formulated is preferably from 39.89 to 99.79% by weight, more preferably from 70 to 99.4% by weight, stiU more preferably from 80 to 99% by weight, of the poHshing Hquid composition 2. The pH of the poHshing Hquid composition 2 having the above composition, which is the same as the poHshing Hquid composition 1—2, is preferably 10 or less, more preferably from 2 to 9.5, stiU more preferably 4 to 9, especiaUy preferably from 7 to 9, from the viewpoints of keeping the poHshing speed at a practical level, suppressing the dishing, and removing the fine scratch damages on the surface. In addition, when the poHshing Hquid composition 2 is prepared from the poHshing Hquid composition 1-3, the amount of the amine compound and/or salts thereof formulated is preferably from 0.01 to 30% by weight, more preferably from 0.02 to 10% by weight, stiU more preferably from 0.03 to 5% by weight, of the poHshing Hquid composition 2. The amount of the etching agent formulated is preferably from 0.1 to 10% by weight, more preferably from 0.2 to 8% by weight, stiU more preferably from 0.3 to 5% by weight, of the poHshing Hquid composition 2. The amount of water formulated is preferably from 39.89 to 99.79% by weight, more preferably from 70 to 99.4% by weight, stiU more preferably from 80 to 99% by weight, of the poHshing Hquid composition 2. The pH of the poHshing Hquid composition 2 having the above composition, which is the same as the poHshing Hquid composition 1-3, is preferably 10 or less, more preferably from 2 to 9.5, stiU more preferably 4 to 9, especiaUy preferably from 5 to 9, from the viewpoints of keeping the poHshing speed at a practical level, suppressing the dishing, and removing the fine scratch damages on the surface. The poHshing Hquid compositions 1 and 2 of the present invention are effective for poHshing processes using a fixed grinding wheel, a poHshing pad in which abrasive grains are fixed to the pad, and the Hke. For instance, by the use of the poHshing Hquid compositions 1 and 2 of the present invention during poHshing in the poHshing process using the fixed grinding wheel, the poHshing speed can be maintained, and the dishing of the metal layer can be suppressed. The poHshing Hquid composition 3 of the present invention is one further comprising an abrasive to a poHshing Hquid composition 1 or 2, which is usable for a poHshing process by loose abrasives. As the abrasive, abrasives generaUy employed for poHshing can be used. The abrasive includes, for instance, metals, carbides of metals or metalloids, nitrides of metals or metaUoids, oxides of metals or metaUoids, borides of metals or metaUoids, diamond, and the Hke. The metals or metaUoids indude those elements belonging to the Groups 3A, 4A, 5A, 3B, 4B, 5B, 6B, 7B or 8B of the Periodic Table. Examples thereof include siHcon dioxide, aluminum oxide, cerium oxide, titanium oxide, zirconium oxide, siHcon nitride, manganese dioxide, siHcon carbide, zinc oxide, diamond, and magnesium oxide. Among them, siHcon dioxide, aluminum oxide and cerium oxide are preferable. As concrete examples thereof, the siHcon dioxide includes coUoidal siHca particles, fumed siHca particles, surface- modified siHca particles, and the Hke; the aluminum oxide includes α-alumina particles, γ-alumina partides, δ-alumina particles, θ-alumina particles, η-alumina particles, amorphous alumina particles, and other fumed alumina or coUoidal alumina prepared by different process; the cerium oxide includes ones having oxidation state of 3 or 4, of which crystal system is hexagonal system, isometric system, or face-centered cubic system, and the Hke. The siHcon dioxide is especiaUy preferable. These abrasives may be used alone or in admixture of two or more kinds. The abrasive has a primary average particle size of preferably from 5 to 1000 nm, more preferably from 10 to 500 nm, still more preferably from 20 to 300 nm, especiaUy preferably from 50 to 200 nm, most preferably from 50 to 100 nm. The lower Umit of the average partide size is preferably 5 nm or more, from the viewpoint of maintaining a given poHshing speed, and the upper Umit thereof is preferably 1000 nm or less, form the viewpoint of preventing the generation of scratches on the surface of the substrate to be poHshed. EspeciaUy when the siHcon dioxide is used as an abrasive, the siHcon dioxide has a primary average particle size of 5 nm or more, preferably 10 nm or more, more preferably 20 nm or more, from the viewpoint of improving the poHshing speed. IncidentaUy, the primary average particle size of the abrasive is determined by adding 0.1 g of the abrasive to 100 g of a 0.1% aqueous solution of sodium polystyrenesulfonate, thereafter applying ultrasonic waves, to disperse the abrasive, and measuring image analysis of the dispersion by observing with a transmission electron microscope. When the poHshing Hquid composition 3 is used when forming interconnection of a semiconductor device, especiaUy preferably usable abrasives are siHca partides having purity of preferably 98% by weight or more, more preferably 99% by weight or more, especiaUy preferably 99.9% by weight or more. The abrasive indudes fumed siHca prepared by subjecting a volatile siHcon compound such as siHcon tetrachloride to high- temperature hydrolysis in oxyhydrogen flame; or coUoidal siHca obtained by a process in which an alkaH siHcate or ethyl siHcate is used as a starting material. InddentaUy, the purity of the above abrasive is obtained as foUows. SpecificaUy, the purity can be determined by dissolving 1 to 3 g of an abrasive in an acid or an aqueous alkaH, and quantifying siHcon ions by ICP (plasma emission analysis). The abrasive is used in a so-caUed "slurry state" using water as a medium in the poHshing Hquid composition 3. The amount of the abrasive formulated in the poHshing Hquid composition 3 can be variously selected depending upon the viscosity of the poHshing Hquid composition and the required quaUty of the substrate to be poHshed, and the Hke. The amount of the abrasive formulated is preferably from 0.01 to 30% by weight, more preferably from 0.02 to 20% by weight, stiU more preferably from 0.1 to 20% by weight, especiaUy preferably from 1.0 to 10% by weight, of the poHshing Hquid composition 3. In addition, when the poHshing Hquid composition 3 is prepared from the poHshing Hquid composition 1-1 (hereinafter referred to as "poHshing Hquid composition 3-1"), the amount of the hydroxyl-group containing compound formulated is preferably from 0.01 to 30% by weight, more preferably from 0.05 to 5% by weight, stiU more preferably from 0.1 to 3% by weight, of the poHshing Hquid composition 3-1, from the viewpoints of maintaining the poHshing speed and suppressing the dishing. The amount of the organic acid formulated in the poHshing Hquid composition 3—1 can be variously selected in order to secure a poHshing speed at a practical level for removal of the metal layer, and to prevent excessive etching of the metal layer. The amount is, for instance, preferably from 0.1 to 10% by weight, more preferably from 0.2 to 8% by weight, stiU more preferably from 0.3 to 5% by weight, of the poHshing Hquid composition 3-1. The amount of the oxidizing agent formulated is preferably from 0.1 to 60% by weight, more preferably from 0.2 to 50% by weight, stiU more preferably from 0.3 to 30% by weight, of the poHshing Hquid composition 3-1, from the viewpoint of obtaining a poHshing speed at a practical level by rapid oxidation of the metal layer. The amount of water formulated is preferably from 40 to 99.98% by weight, more preferably from 60 to 99.4% by weight, stiU more preferably from 75 to 99% by weight, of the poHshing Hquid composition 3-1. The pH of the poHshing Hquid composition 3-1 having the above composition, which is the same as the poHshing Hquid composition 1-1, is preferably from 2 to 11, more preferably from 2 to 7, stiU more preferably 2 to 6, especiaUy preferably from 3 to 5, from the viewpoints of keeping the poHshing speed at a practical level, suppressing the dishing, and removing the fine scratch damages on the surface. In addition, when the poHshing Hquid composition 3 is prepared from the poHshing Hquid composition 1-2 (hereinafter referred to as "poHshing Hquid composition 3-2"), the amount of the aHphatic carboxyHc acid having 7 to 24 carbon atoms and/or salts thereof formulated is preferably from 0.01 to 30% by weight, more preferably from 0.02 to 10% by weight, stiU more preferably from 0.03 to 5% by weight, of the poHshing Hquid composition 3-2, from the viewpoints of maintaining the poHshing speed and suppressing the dishing. The amount of the etching agent formulated in the poHshing Hquid composition 3-2 can be variously selected in order to secure a poHshing speed at a practical level for removal of the metal layer, and to prevent excessive etching of the metal layer. The amount formulated is, for instance, preferably from 0.1 to 10% by weight, more preferably from 0.2 to 8% by weight, stiU more preferably from 0.3 to 5% by weight, of the poHshing Hquid composition 3-2. The amount of the oxidizing agent formulated is preferably from 0.1 to 60% by weight, more preferably from 0.2 to 50% by weight, still more preferably from 0.3 to 30% by weight, especiaUy preferably from 0.3 to 10% by weight, of the poHshing Hquid composition 3-2, from the viewpoint of obtaining a poHshing speed at a practical level by rapid oxidation of the metal layer. The amount of water formulated is preferably from 39.88 to 99.88% by weight, more preferably from 60 to 99.4% by weight, stiU more preferably from 75 to 99% by weight, of the poHshing Hquid composition 3-2. The pH of the poHshing Hquid composition 3-2 having the above composition, which is the same as the poHshing Hquid composition 1-2, is preferably 10 or less, more preferably from 2 to 9.5, stiU more preferably from 4 to 9, espedaUy preferably from 7 to 9, from the viewpoints of keeping the poHshing speed at a practical level, suppressing the dishing, and removing the fine scratch damages on the surface. In order to adjust the pH within the above ranges, an inorganic add such as nitric acid or sulfuric add, an organic add, a basic substance such as potassium hydroxide, sodium hydroxide, ammonia, or an organic amine can be appropriately added, as occasion demands. In addition, when the poHshing Hquid composition 3 is prepared from the poHshing Hquid composition 1-3 (hereinafter referred to as "poHshing Hquid composition 3-3"), the amount of the amine compound and/or salts thereof formulated is preferably from 0.01 to 30% by weight, more preferably from 0.02 to 10% by weight, still more preferably from 0.03 to 5% by weight, of the poHshing Hquid composition 3-3, from the viewpoints of maintaining the poHshing speed and suppressing the dishing. The amount of the etching agent formulated in the poHshing Hquid composition 3—3 can be variously selected in order to secure a poHshing speed at a practical level for removal of the metal layer, and to prevent excessive etching of the metal layer. The amount formulated is, for instance, preferably from 0.1 to 10% by weight, more preferably from 0.2 to 8% by weight, stiU more preferably from 0.3 to 5% by weight, of the poHshing Hquid composition 3-3. The amount of the oxidizing agent formulated is preferably from 0.1 to 60% by weight, more preferably from 0.2 to 50% by weight, stiU more preferably from 0.3 to 30% by weight, especiaUy preferably from 0.3 to 10% by weight, of the poHshing Hquid composition 3-3, from the viewpoint of obtaining a poHshing speed at a practical level by rapid oxidation of the metal layer. The amount of water formulated is preferably from 39.88 to 99.88% by weight, more preferably from 60 to 99.4% by weight, still more preferably from 75 to 99% by weight, of the poHshing Hquid composition 3-3. The pH of the poHshing Hquid composition 3-3 having the above composition, which is the same as the poHshing Hquid composition 1-3, is preferably 10 or less, more preferably from 2 to 9.5, stiU more preferably from 4 to 9, especiaUy preferably from 5 to 9, from the viewpoints of keeping the poHshing speed at a practical level, suppressing the dishing, and removing the fine scratch damages on the surface. The poHshing Hquid compositions 1 to 3 of the present invention can be prepared in any manner without particular Hmitations, and for instance, a poHshing Hquid composition can be obtained by appropriately mixing each of the above components, and adjusting a pH. Concrete examples thereof are as foUows. The poHshing Hquid composition 1 of the present invention can be, for instance, prepared by the foUowing procedures. First, an organic acid and/or an etching agent is added to a given amount of water, and a pH is adjusted to a given value. To the pH-adjusted aqueous solution of the organic acid and or etching agent is added a given amount of an aqueous solution of a hydroxyl group-containing compound; or an aqueous solution of an aHphatic carboxyHc acid having 7 to 24 carbon atoms and/or salts thereof, or an amine compound and/or salts thereof, the aqueous solution of which pH is adjusted to a given level. ApH is finally adjusted, whereby a poHshing Hquid composition 1 can be obtained. The poHshing Hquid composition 2 can be, for instance, prepared by the foUowing procedures. First, an organic acid and/or an etching agent is added to a given amount of water, and a pH is adjusted to a given value. To the pH-adjusted aqueous solution of the organic acid and/or etching agent is added a given amount of an aqueous solution of a hydroxyl group- containing compound; or an aqueous solution of an aHphatic carboxyHc acid having 7 to 24 carbon atoms and/or salts thereof, or an amine compound and/or salts thereof, the aqueous solution of which pH is adjusted to a given level. An oxidizing agent is added before poHshing, and a pH is finally adjusted, whereby a poHshing Hquid composition 2 can be obtained. The poHshing Hquid composition 3 can be, for instance, prepared by the foUowing procedures. First, an organic add and/or an etching agent is added to a given amount of water, and a pH is adjusted to a given value. To the pH-adjusted aqueous solution of the organic add and/or etching agent is added a given amount of an abrasive, and the mixture is sufficiently stirred so as to uniformly disperse the abrasives. Further, to the dispersion is added a given amount of an aqueous solution of a hydroxyl group- containing compound; or an aqueous solution of an aHphatic carboxyHc acid having 7 to 24 carbon atoms and/or salts thereof, or an amine compound and/or salts thereof, the aqueous solution of which pH is adjusted to a given level. A given amount of an oxidizing agent is added before poHshing as occasion demands, and a pH is finally adjusted, whereby a poHshing Hquid composition 3 can be obtained. In addition, various poHshing aids other than those Hsted above such as surfactants and dispersion stabilizers may be added to each of the poHshing Hquid compositions 1 to 3. The poHshing Hquid composition of the present invention can be suitably used for the metal CMP in which a surface comprising an insulating layer and a metal layer is subject to poHshing. The metal constituting the metal layer includes copper or copper aUoys, aluminum or aluminum aUoys, tungsten, and the Hke. Among these metals, especiaUy when used for a process for forming embedded metal interconnection on a semiconductor substrate, copper or copper alloys are preferable. When the poHshing Hquid composition of the present invention is used in the formation of the metal interconnection layer made of copper or copper aUoys, there are exhibited remarkable effects of maintaining the poHshing speed and suppressing the dishing of the embedded metal interconnection layer. In addition, the material for forming the insulating layer may be any of organic or inorganic materials, and indudes inorganic materials such as siHcon dioxide, fluorinated siHcon dioxide, hydrogen-containing SOG (spin- on glass), nitrides, such as tantalum nitride and titanium nitride; and organic materials such as organic SOG, polyimides, fluorinated polyimides, methyl polysUoxanes, aromatic polyethers, hydrogensUsesquioxane, and fluorocarbons. The shape of these substrates to be poHshed is preferably those having a shape of forming recesses of an interconnection shape on the insulating film surface of the semiconductor substrate, and sedimenting metals on the insulating film including the recesses. In addition, there may be provided a barrier fil made of tantalum, titanium, or a nitride thereof between the insulating film and the metal layer. EspedaUy when the metal layer is made of copper or copper aUoys, it is preferable to provide the barrier film, whereby the diffusion of the copper to the insulating layer can be prevented. The poHshing Hquid compositions 1 and 2 of the present invention are effective for a poHshing processes using a fixed grinding wheel, a poHshing pad in which abrasive grains are fixed to the pad, and the Hke. The poHshing Hquid composition 3 is effective for a poHshing process by loose abrasives using a usual poHshing pad made of urethane, and it is also effective for a poHshing processes using a fixed grinding wheel, a poHshing pad in which abrasive grains are fixed to the pad, and the Hke. The process for poHshing a surface to be poHshed comprising an insulating layer and a metal layer of the present invention comprises poHshing a semiconductor substrate using the poHshing Hquid composition of the present invention, thereby smoothening the poHshed surface. In addition, the process for manufacturing a semiconductor substrate of the present invention comprises poHshing a semiconductor surface comprising an insulating layer and a metal layer using the poHshing Hquid composition of the present invention, whereby the poHshing speed of the metal layer can be maintained and the dishing of the embedded metal interconnection layer can be suppressed. Therefore, the process can be suitably appHed to a process for manufacturing the semiconductor substrate. Examples 1-1 to 1-14 and Comparative Examples 1-1 to 1-4 Compounds having a structure in which each of two or more adjacent carbon atoms has hydroxyl group in a molecule (hydroxyl group-containing compound) used in Examples 1-1 to 1-14 are shown in Table 1. The hydroxyl group-containing compound shown in Table 1, the organic acid shown in Table 2, and hydrogen peroxide were mixed so as to have the proportion shown in Table 2. Further, 5% by weight portion of an abrasive shown in Table 2 and balance water were mixed with stirring, and thereafter a pH of the Hquid mixture was adjusted to 4.0, to give a poHshing Hquid composition. IncidentaUy, each of the used abrasives was fumed siHca (primary particle size: 50 nm) and coUoidal siHca (primary particle size: 30 nm). In addition, each of the hydroxyl group-containing compounds "a" to "e" of Table 1 dissolves in water at 1.0% by weight or more. The substrate to be poHshed was poHshed under the foUowing conditions by single-sided poHshing machine. Hereinbelow, the terms inside quotation marks are trade names. Setting Conditions of Single-Sided Processing Machine Single-sided processing machine used: single-sided poHshing machine (disc size: 30 cm), manufactured by Engis. Processing pressure: 29.4 x 10 3 Pa PoHshing Pad: upper layer: "IC1000" (manufactured by Rodel Nitta K.K.); and lower layer: "SUBA400" (manufactured by Rodel Nitta K.K.). Disc rotational speed: 60 rpm Work rotational speed: 50 rpm (rotating disc and work in the same direction) Feeding flow rate for a poHshing Hquid composition: 100 ml/min PoHshing time period: 10 minutes In addition, the properties of the poHshing Hquid composition such as relative poHshing speed, relative etching speed, and dishing of the surface to be poHshed were evaluated in accordance with the foUowing methods. The results thereof are shown in Table 2. Relative PoHshing Speed The relative poHshing speed is a value obtained by dividing the poHshing speed of a poHshing Hquid composition by a poHshing speed of a comparative example where the kinds and the amounts of an abrasive, an oxidizing agent and an etching agent were the same as the poHshing Hquid composition. The poHshing speed was obtained by poHshing a roUed copper plate of a diameter of 50 mm and a plate thickness of 1 mm, determining a change in the thickness before and after poHshing, and dividing the resultant value by a poHshing time. IncidentaUy, the thickness of the copper plate was measured by using a high-precision digital analyzer "MINIAX" commercially available from K. K. Tokyo Seimitsu. Here, each of the relative poHshing speeds for Examples 1-1 to 1-5 and 1-9 to 1-10 was calculated based on Comparative Example I-i; each of the relative poHshing speeds for Examples 1-6 to 1-8 was calculated based on Comparative Example 1-2; and each of the relative poHshing speeds for Examples 1-13 to 1-14 was calculated based on Comparative Example 1-3. IncidentaUy, apart from the above, the relative poHshing speed for Examples I— 11 was calculated based on Comparative Example I-i; the relative poHshing speed for Examples 1-12 was calculated based on Comparative Example 1-2; and the relative poHshing speed for Comparative Example 1-4 was calculated based on Comparative Example 1-1. Relative Etching Speed The relative etching speed is a value obtained by dividing an etching speed of the poHshing Hquid composition comprising the above hydroxyl group-containing compound by an etching speed "b" of a poHshing Hquid composition not containing the above hydroxyl group-containing compound but having the same kinds and the amounts of an abrasive, an oxidizing agent and an etching agent as the poHshing Hquid composition. Here, each of the relative etching speeds for Examples 1-1 to 1-5 and 1-9 to 1-10 was calculated based on Comparative Example I-i; each of the relative etching speeds for Examples 1-6 to 1-8 was calculated based on Comparative Example 1-2; and each of the relative etching speeds for Examples 1-13 to 1-14 was calculated based on Comparative Example 1-3. IncidentaUy, apart from the above, the relative etching speed for Examples I— 11 was calculated based on Comparative Example I-i; the relative etching speed for Examples 1-12 was calculated based on Comparative Example 1-2; and the relative etching speed for Comparative Example 1-4 was calculated based on Comparative Example 1-1. IncidentaUy, each the etching speeds for each the poHshing Hquid compositions of Examples 1-1 to 1-14 and Comparative Example 1-4 was a value measured under the same conditions as the above etching test B described above, except for using these poHshing Hquid compositions. Dishing In order to evaluate dishing, a wafer chip of a square with a side of 20 mm was cut out from a wafer (commerciaUy available from SKW, "SKW6-2", size: 200 mm) with copper damascene interconnection patterns. Five wafer chips were fixed on an adhesive plate made of ceramic. Thereafter, a copper film in the periphery of the copper interconnection portion, the interconnection of which had a width of 150 μm, was removed, with confirming the state under the above conditions. The substrate was poHshed to a point where a barrier film appeared, and was further poHshed with 20% of a time period required for poHshing until this point, to provide a sample for evaluating dishing. The (Hshing was evaluated by determining a cross section profile of a copper interconnection portion, the interconnection of which had a width of 150 μm by a surface roughness tester (commerciaUy available from (K.K.) Mitsutoyo, "SV-600"). IncidentaUy, when there were no recesses having sizes of 0.15 μm or more in the cross section profile of the copper interconnection tested, it was evaluated as absence of dishing, and when there were recesses having sizes of 0.15 μm or more, it was evaluated as presence of dishing, which are respectively denoted in Table 2 as "absence" or "presence." Here, the etching speed "b" of the poHshing Hquid compositions used for Comparative Examples 1-1 to 1-3 were as foUows. Comparative Example I- 1: 80 A/min Comparative Example 1-2: 80 A/min Comparative Example 1-3: 200 A/min Table 1 No. Hydroxyl Group-Containing Compound ~~ a n-C H 9 CH(OH)CH 2 OH b n-C 4 H9OCH2CH(OH)CH 2 OH c n-C6H 13 COOCH2CH(OH)CH 2 OH d (n-C3H 7 ) 2 NCH 2 CH(OH)CH20H e n-C3H 7 OCOCH(OH)CH(OH)COO-n-C3H7 Table 2 Ex. Hydroxyl Group- Organic Acid Hydrogen Abrasive No. Containing Compound Peroxide Kind Content Kind Content Content Kind (% by (% by (% by wt.) wt.) t.) 1-1 a 1.0 Gluconic 2.0 2.0 Fumed acid Silica 1-2 b 1.0 Gluconic 2.0 2.0 Fumed acid Silica 1-3 c 1.0 Gluconic 2.0 2.0 Fumed acid Silica 1-4 d 1.0 Gluconic 2.0 2.0 Fumed acid Silica 1-5 e 1.0 Gluconic 2.0 2.0 Fumed acid Silica 1-6 a 1.0 Gluconic 2.0 2.0 Colloidal acid Silica 1-7 b 1.0 Gluconic 2.0 2.0 Colloidal acid Silica 1-8 c 1.0 Gluconic 2.0 2.0 Colloidal acid Silica 1-9 a 0.5 Gluconic 2.0 2.0 Fumed acid Silica 1-10 a 2.0 Gluconic 2.0 2.0 Fumed acid Silica I— 11 b 1.0 — — 2.0 Fumed Silica 1-12 b 1.0 Gluconic 2.0 — Colloidal acid Silica 1-13 a 1.0 Glycolic 2.0 2.0 Colloidal acid Silica 1-14 b 1.0 Glycolic 2.0 2.0 Colloidal acid Silica Comp. Ex. No. 1-1 — — Gluconic 2.0 2.0 Fumed acid Silica 1-2 — — Gluconic 2.0 2.0 Colloidal acid Silica 1-3 — — Glycolic 2.0 2.0 Colloidal acid Silica 1-4 Benzo- 1.0 Gluconic 2.0 2.0 Fumed triazole acid Silica Continued — Continued Ex. Evaluation of Properties No. Relative Polishing Relative Etching Speed Dishing Speed Based on Based on Based on Based on Based on Based on C.Ex.I-1 C.Ex.I-2 C.Ex.I-3 C.Ex.I-1 C.Ex.I-2 C.Ex.I-3 1-1 1.0 — 0.1 or — — Absence less 1-2 1.0 — 0.1 or — — Absence less 1-3 1.0 - 0.15 - - Absence 1-4 1.1 - 0.15 - - Absence 1-5 1.1 - 0.2 - - Absence 1-6 1.0 - - 0.1 or - Absence less 1-7 1.0 — — 0.1 or — Absence less 1-8 1.1 - - 0.15 - Absence 1-9 1.1 - 0.1 or - - Absence less 1-10 1.0 — 0.1 or — — Absence less 1-11 0.7 — 0.1 or — — Absence less 1-12 0.7 — — 0.1 or — Absence less 1-13 — — 0.9 — — 0.1 Absence or less 1-14 — — 0.9 — — 0.1 Absence or less Comp. Ex. No. 1-1 1.0 - 1.0 - - Presence 1-2 1.0 - - 1.0 - Presence 1-3 - - 1.0 - - 1.0 Presence 1-4 0.1 - 0.1 or - - * less Note *: The poHshing speed was too slow to be evaluated. It is found from the results of Tables 1 and 2 that aU of the poHshing Hquid compositions of Examples I-l to 1-14 where the hydroxyl group- containing compound is formulated in the poHshing Hquid composition suppressed the etching speed and the dishing is not generated without substantiaUy lowering the poHshing speed, as compared to the poHshing Hquid compositions of Comparative Examples I-l to 1-3 where the hydroxyl group-containing compound is not formulated. In addition, it is found that the poHshing Hquid composition of Comparative Example 1-4 where benzotriazole acting to suppressing etching was used in place of the hydroxyl group-containing compound, the poHshing speed is extremely low. Also, it is found that by using the hydroxyl group-containing compound, the etching agent, and the oxidizing agent, a higher poHshing speed can be reaHzed, and the dishing can be prevented. Examples II— 1 to 11-12 and Comparative Examples II— 1 to 11-12 Each of the etching agents shown in Tables 3 and 4, and hydrogen peroxide were mixed with a given amount of water, so as to have the proportion shown in Tables 3 and 4. Further, 5% by weight portion of the abrasive shown in Tables 3 and 4 were mixed with stirring, and thereafter an aqueous ammonia was added so as to have a pH of the Hquid mixture of 7.5 to 8. Separately from above, an aqueous ammonia was previously added to an aHphatic carboxyHc acid having 7 to 24 carbon atoms to adjust the pH to 7.5 to 8, whereby preparing an aqueous solution of the aHphatic carboxyHc acid or its salt. The aqueous solution of the aHphatic carboxyHc add or its salt was mixed with the above Hquid mixture with stirring,, so as to have the proportion shown in Tables 3 and 4. Thereafter, a pH of the Hquid mixture was adjusted to a value shown in Tables 3 and 4, to give each poHshing Hquid composition. IncidentaUy, each of the used abrasives was fumed siHca (primary particle size: 50 nm) and coUoidal siHca (primary partide size: 100 nm). In addition, a roUed copper plate of a diameter of 50 mm and a plate thickness of 1 mm was poHshed under the same conditions as above by single-sided poHshing machine. In addition, the properties of the poHshing Hquid composition such as relative poHshing speed, relative etching speed, dishing of the surface to be poHshed, and surface condition of copper were evaluated in accordance with the foUowing methods. The results thereof are shown in Tables 3 and 4. Relative PoHshing Speed The relative poHshing speed is a value obtained by dividing the poHshing speed of a poHshing Hquid composition by a poHshing speed of a comparative example where the kinds and the amounts of an abrasive, an oxidizing agent and an etching agent were the same as the poHshing Hquid composition. The poHshing speed was obtained by poHshing a roUed copper plate of a diameter of 50 mm and a plate thickness of 1 mm under the poHshing conditions mentioned above, determining a change in the thickness before and after poHshing, and dividing the resultant value by a poHshing time. IncidentaUy, the thickness of the copper plate was measured by using a high-precision digital analyzer "MINIAX" commerciaUy available from K. K. Tokyo Seimitsu. Here, each of the relative poHshing speeds for Examples II-l to II-6 was calculated based on Comparative Example II-l; the relative poHshing speed for Example II-7 was calculated based on Comparative Example II— 2; the relative poHshing speed for Example II— 8 was calculated based on Comparative Example II— 3J the relative poHshing speed for Example II-9 was calculated based on Comparative Example II-4; the relative poHshing speed for Example 11-10 was calculated based on Comparative Example II— 5; the relative poHshing speed for Example 11-11 was calculated based on Comparative Example II-li; the relative poHshing speed for Example 11-12 was calculated based on Comparative Example 11-12; the relative poHshing speed for Comparative Example II— 9 was calculated based on Comparative Example II-l; and the relative poHshing speed for Comparative Example 11-10 was calculated based on Comparative Example II— 2. IncidentaUy, apart from the above, each of the relative poHshing speeds for Comparative Examples II— 6 to II— 8 was calculated based on Comparative Example II-l. Relative Etching Speed The relative etching speed is a value obtained by dividing an etching speed of the poHshing Hquid composition comprising the above aHphatic carboxyHc acid and/or its salt by an etching speed "c" of a poHshing Hquid composition not containing the above aHphatic carboxyHc acid and/or its salt but having the same kinds and the amounts of an abrasive, an oxidizing agent and an etching agent as the poHshing Hquid composition. Here, each of the relative etching speeds for Examples II-l to II— 6 was calculated based on Comparative Example II-l; the relative etching speed for Example II-7 was calculated based on Comparative Example II— 2; the relative etching speed for Example II— 8 was calculated based on Comparative Example II— 3; the relative etching speed for Example II-9 was calculated based on Comparative Example II-4; the relative etching speed for Example 11-10 was calculated based on Comparative Example II— 5, " the relative etching speed for Example 11-11 was calculated based on Comparative Example II— 11; the relative etching speed for Example 11-12 was calculated based on Comparative Example 11-12; the relative etching speed for Comparative Example II— 9 was calculated based on Comparative Example II-l; and the relative etching speed for Comparative Example 11-10 was calculated based on Comparative Example II— 2. InddentaUy, apart from the above, each of the relative etching speeds for Comparative Examples II— 6 to II— 8 was calculated based on Comparative Example II-l. IncidentaUy, each the etching speeds for each the poHshing Hquid compositions of Examples II-l to 11-12 and Comparative Examples II-7 to II-8 was a value measured under the same conditions as the above etching test C described above, except for using these poHshing Hquid compositions. Dishing Dishing was evaluated in the same manner as above. IncidentaUy, when there were no recesses having sizes of 0.15 μm or more in the cross section profile of the copper interconnection tested, it was evaluated as absence of dishing, and when there were recesses having sizes of 0.15 μm or more, it was evaluated as presence of dishing, which are respectively denoted in Tables 3 and 4 as "absence" or "presence." Copper Surface Condition The surface condition of the copper film at the copper interconnection portion, the interconnection of which has a width of 150 μm on the surface of wafer chip used in the evaluation of the dishing was observed by optical microscope, to confirm the presence or absence of roughening. Here, the etching speed "c" of the poHshing Hquid compositions used for Comparative Examples II-l to II— 6 were as foUows. Comparative Example II-l 50 A/min Comparative Example II— 2 100 A/min Comparative Example II— 3 200 A/min Comparative Example II-4 600 A/min Comparative Example II— 5 50 A/min Comparative Example II— 6 100 A/min Table 3 Ex. AHphatic Etching Agent Hydrogen Abrasive No. CarboxyHc Acid Peroxide H and/or Its Salt Kind Content Kind Content Content Kind II-l Octanoic 0.6 ϋ Glycolic acid 2.0 1) 4.0 υ Colloidal 7.6 acid Silica II-2 Nonanoic 0.3 Glycolic acid 2.0 4.0 Colloidal 7.7 acid Silica II-3 Heptanoic 1.2 Glycolic acid 2.0 4.0 Colloidal 7.6 acid Silica II-4 Decanoic 0.3 Glycolic acid 2.0 4.0 Colloidal 7.7 acid Silica π-5 Oleic acid 0.3 Glycolic acid 2.0 . 4.0 Colloidal 8.0 Silica π-6 Isooctanoic 1.5 Glycolic acid 2.0 4.0 Colloidal 7.7 acid 2) Silica II-7 Octanoic 1.2 Citric acid 2.0 2.0 Fumed 7.6 acid Silica II-8 Octanoic 1.0 PhthaUc 2.0 2.0 Fumed 7.9 acid acid Silica π-9 Octanoic 1.5 Aminotri- 2.0 2.0 Fumed 7.6 acid (methylene- Silica phosphonic acid) 1-10 Octanoic 0.4 Glycolic acid 2.0 — Colloidal 7.6 acid Silica 1—11 Octanoic 1.0 Hydrochloric 2.0 2.0 Colloidal 7.7 acid acid Silica 1-12 Octanoic 0.5 Sulfuric acid 2.0 2.0 Colloidal 7.9 acid Silica Continued - Continued - Ex. Evaluation for Properties No. Relative Relative Comp. Ex. To Dishing Copper Polishing Etching Which Evaluation Surface Speed Speed Was Based Condition II-l 1.0 0.1 or less Comp. Ex. II-l Absence No Roughening II-2 1.0 0.1 or less Comp. Ex. II-l Absence No Roughening π-3 1.0 0.1 or less Comp. Ex. II-l Absence No Roughening π-4 0.9 0.1 or less Comp. Ex. II-l Absence No Roughening π-5 0.9 0.1 or less Comp. Ex. II-l Absence No Roughening π-6 1.0 0.1 or less Comp. Ex. II-l Absence No Roughening π-7 1.0 0.1 or less Comp. Ex. II— 2 Absence No Roughening π-8 0.9 0.1 or less Comp. Ex. II— 3 Absence No Roughening II-9 0.9 0.1 or less Comp. Ex. II-4 Absence No Roughening 11-10 0.9 0.1 or less Comp. Ex. II-5 Absence No Roughening 11-11 0.9 0.1 or less Comp. Ex. 11-11 Absence No Roughening 11-12 0.9 0.1 or less Comp. Ex. 11-12 Absence No Roughening Note l): % by weight 2): Secanoic C8 acid (trade name, commerciaUy available from Exon Chemicals K.K.) Table 4 Comp. Aliphatic Etching Agent Hydrogen Abrasive Ex. Carboxyli c Acid Peroxide pH No. and/or Its Salt Kind Content Kind Content Content Kind II-l — — Glycolic acid 2.0 4.0 Colloidal 7.6 Silica II-2 — — Citric acid 2.0 2.0 Fumed 7.6 Silica II-3 — — Phthalic 2.0 2.0 Fumed 7.9 acid Silica II-4 Aminotri- 2.0 2.0 Fumed 7.6 (methylene- Silica phosphonic acid) π-5 — — Glycolic acid 2.0 — Colloidal 7.6 Silica II-6 — — Glycolic acid 1.0 4.0 Colloidal 7.6 Citric acid 1.0 Silica π-7 Octanoic 0.5" 4.0 Colloidal 7.8 acid Silica Heptanoic 0.5 acid II-8 Oleic acid 0.5 — — 4.0 CoUoidal 7.6 Silica π-9 Benzo- 0.3 Glycolic acid 2.0 4.0 Colloidal 7.6 triazole Silica 11-10 Ammonium 1.0 Citric acid 2.0 2.0 Fumed 7.6 PolySilica acrylate II-ll — — Hydrochloric 2.0 2.0 Colloidal 7.7 acid Silica 11-12 — — Sulfuric 2.0 2.0 Colloidal 7.9 acid Silica Continued Continued Comp. Evaluation for Properti ies Ex. Relative Relative Comp. Ex. To Dishing Copper No. Polishing Etching Which Evaluation Surface Speed Speed Was Based Condition II-l 1.0 1.0 — Presence No Roughening II-2 1.0 1.0 — Presence No Roughening II-3 1.0 1.0 — Presence No Roughening II-4 1.0 1.0 — Presence No Roughening II-5 1.0 1.0 — Presence No Roughening π-6 1.3 1.5 Comp. Ex. II-l Presence No Roughening II-7 0.1 or less 0.1 or less Comp. Ex. II-l π-8 The poUshing speed was 0.1 or less 0.1 or less Comp. Ex. II-l π-9 too slow to be evaluated. 0.1 or less 0.1 or less Comp. Ex. II-l 11-10 1.2 0.1 or less Comp. Ex. II-2 Absence Presence of Roughening II-ll 1.0 1.0 — Presence No Roughening 11-12 1.0 1.0 — Presence No Roughening Note l): % by weight It is found from the results of Tables 3 and 4 that aU of the poHshing Hquid compositions of Examples II-l to 11-12 where the aHphatic carboxyHc add having 7 to 24 carbon atoms is formulated in the poHshing Hquid composition suppressed the etching speed and the dishing is not generated without substantiaUy lowering the poHshing speed, as compared to the poHshing Hquid compositions of Comparative Examples II-l to II— 5, II-ll and 11-12 where the aHphatic carboxyHc acid is not formulated. In addition, the poHshing Hquid composition of Comparative Example II— 6 where two kinds of aHphatic carboxyHc acids having 6 or less carbon atoms are used in combination without using the aHphatic carboxyHc acid having 7 to 24 carbon atoms has high etching speed and the dishing generated. In addition, it is found that aU of the poHshing Hquid composition of Comparative Example II— 7 where two kinds of the aHphatic carboxyHc acids having 7 to 24 carbon atoms are used in combination; the poHshing Hquid composition of Comparative Example II— 8 where the organic add capable of forming an aqueous salt with copper is not formulated; and the poHshing Hquid composition of Comparative Example II— 9 where benzotriazole for suppressing etching is formulated have extremely low poHshing speeds, and that the poHshing Hquid composition of Comparative Example 11-10 where ammonium polyacrylate is formulated has copper surface with roughening generated. Therefore, an even higher poHshing speed can be reaHzed by using the aHphatic carboxyHc acid having 7 to 24 carbon atoms in combination with an etching agent, and the dishing can be prevented. EspeciaUy, from the viewpoint of keeping the low-foamabiHty during poHshing, it is more preferable that the aHphatic carboxyHc add having 7 to 24 carbon atoms is heptanoic add, octanoic acid and nonanoic acid. Examples III— 1 to III— 8 and Comparative Examples III— 1 to III— 5 Each of the etching agents shown in Table 5, and the amine compound were mixed with a given amount of water, so as to have the proportion shown in Table 5, and thereafter an aqueous ammonia was added so as to have a pH of the Hquid mixture of 6 to 8. Further, hydrogen peroxide was added so as to have a proportion shown in Table 5. Further, 5% by weight portion of an abrasive shown in Table 5 was mixed with stirring, and thereafter a pH of the Hquid mixture was adjusted to the value shown in Table 5, to give a poHshing Hquid composition. IncidentaUy, each of the used abrasives was fumed siHca (primary particle size ' - 50 nm) and coUoidal siHca (primary particle size: 100 nm). In addition, a roUed copper plate of a diameter of 50 mm and a plate thickness of 1 mm was poHshed under the same conditions as above by single-sided poHshing machine. In addition, the properties of the poHshing Hquid composition such as relative poHshing speed, relative etching speed, and dishing of the surface to be poHshed were evaluated in accordance with the foUowing methods. The results thereof are shown in Table 5. Relative PoHshing Speed The relative poHshing speed is a value obtained by dividing the poHshing speed of a poHshing Hquid composition by a poHshing speed of a comparative example where the kinds and the amounts of an abrasive, an oxidizing agent and an etching agent were the same as the poHshing Hquid composition. The poHshing speed was obtained by poHshing a roUed copper plate of a diameter of 50 mm and a plate thickness of 1 mm, determining a change in the thickness before and after poHshing, and dividing the resultant value by a poHshing time. IncidentaUy, the thickness of the copper plate was measured by using a high-precision digital analyzer "MINIAX" commerciaUy available from K. K. Tokyo Seimitsu. Here, each of the relative poHshing speeds for Examples III— 1, III— 2 , III-4, III— 5, and III-7 was calculated based on Comparative Example III-i; the relative poHshing speed for Example III— 6 was calculated based on Comparative Example III— 2; the relative poHshing speed for Example III— 3 was calculated based on Comparative Example III— 3; and the relative poHshing speed for Example III— 8 was calculated based on Comparative Example III-4. IncidentaUy, apart from the above, the relative poHshing speed for Comparative Example III— 5 was calculated based on Comparative Example III-l. Relative Etching Speed The relative etching speed is a value obtained by dividing an etching speed of the poHshing Hquid composition comprising the above amine compound and/or its salt by an etching speed "c" of a poHshing Hquid composition not containing the above amine compound and/or its salt but having the same kinds and the amounts of an abrasive, an oxidizing agent and an etching agent as the poHshing Hquid composition. Here, each of the relative etching speeds for Examples III-l, III— 2, III-4, III— 5, and III— 7 was calculated based on Comparative Example III-l; the relative etching speed for Example III— 6 was calculated based on Comparative Example III-2; the relative etching speed for Example III— 3 was calculated based on Comparative Example III— 3; and the relative etching speed for Example III— 8 was calculated based on Comparative Example III-4. InddentaUy, apart from the above, the relative etching speed for Comparative Example III-5 was calculated based on Comparative Example III-l. InddentaUy, each the etching speeds for each the poHshing Hquid compositions of Examples III-l to III— 8 and Comparative Example III-5 was a value measured under the same conditions as the above etching test C described above, except for using these poHshing Hquid compositions. Dishing Dishing was evaluated in the same manner as above. InddentaUy, when there were no recesses having sizes of 0.15 μm or more in the cross section profile of the copper interconnection tested, it was evaluated as absence of dishing, and when there were recesses having sizes of 0.15 μm or more, it was evaluated as presence of dishing, which are respectively denoted in Table 5 as "absence" or "presence." Here, the etching speed "c" of the poHshing Hquid compositions used for Comparative Examples III-l to III— 4 were as foUows. C omp ar ative Example III- 1 : 50 A/min Comparative Example III— 2 : 100 A/min Comparative Example III— 3 : 50 A/min Comparative Example III-4: 50 A/min Table 5 Ex. Amine Compound Etching Agent Hydrogen Abrasive No. Peroxide Kind Content Kind Content Content Kind PH (% by (% by (% by wt.) t.) wt.) III-l Octylamine 0.8 Glycolic 2.0 4.0 Colloidal 7.6 acid Silica ιπ-2 Nonylamine 0.5 Glycolic 2.0 4.0 Colloidal 7.6 acid Silica πι-3 Decylamine 1.0 Hydro2÷0 2.0 Colloidal 7.7 chloric Silica acid πι-4 Oleylamine 0.4 Glycolic 2.0 4.0 Colloidal 7.6 acid Silica πι-5 Dimethyl- 0.5 Glycolic 2.0 4.0 Colloidal 7.6 dodecyl- acid Silica amine ιπ-6 Dimethyl- 0.8 Citric 2.0 2.0 Fumed 7.6 dodecyl- acid SiHca amine ιπ-7 Dodecyl- 0.8 Glycohc 2.0 4.0 Colloidal 7.6 diethanol- acid Silica amine ιπ-8 Octylamine 0.5 GlycoUc 2.0 — Colloidal 7.6 acid Silica Comp. Ex. No. III-l — — Glycolic 2.0 4.0 CoUoidal 7.6 acid SiHca III-2 — — Citric 2.0 2.0 Fumed 7.6 acid Silica ιπ-3 Hydro2.0 2.0 Colloidal 7.7 chloric SiHca acid πι-4 — — Glycolic 2.0 — Colloidal 7.6 acid Silica III-5 Benzotri- 0.3 Glycolic 2.0 4.0 Colloidal 7.6 azole acid Silica Continued - - Continued - Ex. Evaluation for Properties No. Relative Relative Comp. Ex. To Dishing Polishing Etching Which Evaluation Speed Speed Was Based III-l 1.0 0.1 or less Comp. Ex. III-l Absence III-2 0.9 0.1 or less Comp. Ex. III-l Absence III-3 1.0 0.1 or less Comp. Ex. Ill— 3 Absence πι-4 0.9 0.1 or less Comp. Ex. III-l Absence πι-5 0.9 0.1 or less Comp. Ex. III-l Absence πι-6 0.9 0.1 or less Comp. Ex. III-2 Absence ιπ-7 0.9 0.1 or less Comp. Ex. III-l Absence πι-8 0.9 0.1 or less Comp. Ex. III-4 Absence Comp. Ex. No. III-l 1.0 1.0 — Presence III-2 1.0 1.0 — Presence πι-3 1.0 1.0 — Presence πι-4 1.0 1.0 — Presence III-5 0.1 or less 0.1 or less Comp. Ex. III-l * Note *: The poHshing speed was too slow to be evaluated. It is found from the results of Table 5 that aU of the poHshing Hquid compositions of Examples III-l to III— 8 where the amine compound is formulated in the poHshing Hquid composition suppressed the etching speed and the dishing is not generated without substantiaUy lowering the poHshing speed, as compared to the poHshing Hquid compositions of Comparative Examples III-l to 111-4 where the amine compound is not formulated. In addition, it is found that the poHshing Hquid composition of Comparative Example III— 5 where benzotriazole acting to suppressing etching was used in place of the amine compound, the poHshing speed is extremely low. Therefore, it is found that an even higher poHshing speed can be reaUzed by using the amine compound in combination with an etching agent, and the dishing can be prevented. EspeciaUy, from the viewpoint of keeping the low-foamabiHty during poHshing, it is more preferable that the amine compound is heptylamine, octylamine and nonylamine. Since the poHshing Hquid composition of the present invention is used for poHshing a surface to be poHshed comprising an insulating layer and a metal layer, there are exhibited such effects that the poHshing speed of the metal film is maintained, that the etching speed is suppressed, and defects such as dishing in the interconnection metal layer is not generated.

Claims: CLAIMS 1. A poHshing Hquid composition for poHshing a surface to be poHshed comprising an insulating layer and a metal layer, the poHshing Hquid composition comprising a compound having a structure in which each of two or more adjacent carbon atoms has a hydroxyl group in a molecule, and water. 2. The poHshing Hquid composition according to daim 1, wherein the compound having a structure in which each of two or more adjacent carbon atoms has a hydroxyl group in a molecule is represented by the formula (I): R 1 -X-(CH 2 ) q -[CH(OH)] n -CH2θH (I) wherein R 1 is a hydrocarbon group having 1 to 24 carbon atoms; X is a group represented by (CH2)m, wherein m is 0 or 1, oxygen atom, sulfur atom, COO group, OCO group, a group represented by NR 2 or 0(R 2 0)P(O)0, wherein R 2 is hydrogen atom or a hydrocarbon group having 1 to 24 carbon atoms; q is 0 or l; and n is an integer of 1 to 4. 3. The poHshing Hquid composition according to claim 1 or 2, further comprising an organic acid. 4. The poHshing Hquid composition according to claim 3, wherein the organic acid is an etching agent. 5. The poHshing Hquid composition according to claim 1 or 2, further comprising an etching agent comprising an inorganic acid. 6. A poHshing Hquid composition for poHshing a surface to be poHshed comprising an insulating layer and a metal layer, the poHshing Hquid composition comprising an aHphatic carboxyHc acid having 7 to 24 carbon atoms and/or a salt thereof, an etching agent, and water. 7. A poHshing Hquid composition for poHshing a surface to be poHshed comprising an insulating layer and a metal layer, the poHshing Hquid composition comprising an amine compound represented by the foUowing general formula (II): wherein R 3 is a Hnear or branched alkyl group having 4 to 18 carbon atoms, a Hnear or branched alkenyl group having 4 to 18 carbon atoms, an aryl group having 6 to 18 carbon atoms, and an aralkyl group having 7 to 18 carbon atoms; each of R 4 and R 5 , which may be identical or different, is hydrogen atom, a Hnear alkyl group having 1 to 8 carbon atoms or a branched alkyl group having 3 to 8 carbon atoms, or a group represented by H-(OR 6 ) z - wherein R 6 is a Hnear alkylene group having 1 to 3 carbon atoms, or a branched alkylene group having 3 carbon atoms, ' and Z is a number of 1 to 20, and/or a salt thereof, an etching agent, and water. 8. The poHshing Hquid composition according to any one of daims 1 to 7, further comprising an oxidizing agent. 9. The poHshing Hquid composition according to any one of daims 1 to 8, further comprising an abrasive. 10. A process for poHshing a semiconductor substrate, comprising poHshing a surface to be poHshed comprising an insulating layer and a metal layer using the poHshing Hquid composition of any one of claims 1 to 9, thereby smoothening the semiconductor substrate. 11. A process for manufacturing a semiconductor substrate comprising poHshing a surface to be poHshed comprising an insulating layer and a metal layer using the poHshing Hquid composition of any one of daims 1 to 9, thereby smoothening the semiconductor substrate.

Inventors: HAGIHARA TOSHIYA, HASHIMOTO RYOICHI, YONEDA YASUHIRO, HAGIHARA, TOSHIYA, HASHIMOTO, RYOICHI, YONEDA, YASUHIRO
Applicants: HAGIHARA TOSHIYA, HASHIMOTO RYOICHI, KAO CORP, YONEDA YASUHIRO, HAGIHARA, TOSHIYA, HASHIMOTO, RYOICHI, KAO CORPORATION, YONEDA, YASUHIRO
Application year: 2000
Main classification: C09K3
IPC codes: C09G1, C23F3, H01L21