Method and apparatus for parallel redundancy in semiconductor memories

Abstract: The present disclosure relates to semiconductor memories and more particularly, to an improved method and apparatus for replacing defective row/column lines. In accordance with the present invention, a high replacement flexibility redundancy and method is employed to increase chip yield and prevent sense amplifier signal contention. Redundancy elements are integrated in at least two of a plurality of memory arrays, which don't share the sense amplifiers. Thus, no additional sense amplifiers are required. A defective row/column line in a first array or block is replaced with a redundant row/column line from its own redundancy. A corresponding row/column line whether defective or not is replaced in a second array or block, which does not share sense amplifiers with the first block. The corresponding row/column is replaced to mimic the redundancy replacement of the first block thereby increasing flexibility and yield as well as preventing sensing signal contention.

Description: BACKGROUND 1. Technical Field This disclosure relates to semiconductor memories and more particularly, to an improved method and apparatus for replacing defective row/column lines. 2. Description of the Related Art CMOS technology has evolved such that the computer market has rapidly opened to a wide range of consumers. Today, multimedia requires at least 32 Mb of DRAM and preferably 64 Mb. This increases the relative cost of the memory system within the computer. In the near future, it is likely that 128 Mb and 512 Mb computers will become commonplace, which suggests a potential demand for 256 Mb and 1 Gb DRAMS (Dynamic Random Access Memory) and beyond. Despite the huge memory array size and lithographic difficulties that ensue, it is more important than ever to increase the chip yield. Process engineers are constantly attempting to reduce, and ultimately eliminate, or at the very least, mask defects. Faults that inevitably remain in the chip are generally overcome using special circuit designs and more specifically, redundancy replacement. A typical redundancy architecture, which is commonly used for low density DRAMs is shown in FIG. 1a. FIG. 1a depicts a plurality of spare memory elements (redundancy cells) used for replacing defective memory elements (defective cells) within the domain, and which are appended to each memory block (sub array) comprising a plurality of memory elements (cells). The sense amplifiers (not shown) are located between adjacent memory blocks, providing support not only for memory elements but also the redundancy memory elements. Each redundancy unit (RU) is comprised of few redundancy memory elements (REs), (e.g., two RE per RU are illustrated therein), and which areused to repair existing faults (labeled X) within the corresponding memory block. This scheme, labeled intra-block replacement, increases the redundancy area overhead as the number of memory blocks increases for high-density memories, since each memory block composes a domain for the replacement, and the domains in different memory blocks are mutually exclusive to each other. This requires at least one or preferably two RUs in each memory block. Thus, the efficiency of the RUs is rather poor in view of its inflexibility which reduces the chip yield substantially when faults are clustered in a given memory block. The above-mentioned concept is embodied in a configuration described in the article by T. Kirihata et al., entitled "A 14 ns 4 Mb DRAM with 300 mW WActive Power", published in the IEEE journal of Solid State Circuits, Vol. 27, pp. 1222-1228, September 1992. Another redundancy architecture, known as a flexible redundancy replacement configuration, is shown in FIG. 1b, wherein a memory is depicted having a redundancy memory block (array) as a large domain of RUs to selectively replace failing memory elements anywhere in the memory. In this configuration, REs within the RU can repair faults (labeled X) located in any memory block within the memory. The advantage of this arrangement over the previously described intra-block replacement is that one section, namely a redundancy memory block, having a certain number of RUs may advantageously be used to service any number of memory blocks forming the memory. This translates into a substantial savings of real estate for the RUs over the previous scheme. It does, however, require additional sense amplifiers to support the redundancy memory block. More details regarding the above configurations and the various trade-off may be found in an article by T. Kirihata et al., "A fault-Tolerant Design for 256 Mb DRAMs" published in the Digest of Technical Papers of the 1995 Symposium on VLSI Circuits, pp. 1525-1534, October 1997; in and article by T. Sugibayashi et al., "A 30 ns 256 Mb DRAM with Multi-divided Arrays Structure", published in the IEEE Journal of Solid State Circuits, Vol. 28, pp. 1092-1098, November 1993; and in an article by H. L. Kalter et al., "A 50 ns 16 Mb DRAM with a 10 ns Data Rate and On-Chip ECC", published in the IEEE Journal of Solid State Circuits, Vol. 25, pp. 1118-1128, October 1990. Another redundancy Architecture, shown in FIG. 1c employs a flexible redundancy replacement with an intra-block redundancy configuration: In this architecture, RUs are integrated in each sub-array, as in the intra-block replacement. It does, however, allow the use of RUs to repair a fault flexibly for other memory blocks, as in the flexible redundancy replacement with redundancy memory block. Note that the additional sense amplifiers are not required for enabling the flexibility, resulting in less design space overhead. However, the data contention problem occurs when two or more sub-arrays, which have a same flexible domain for the replacement, are activated simultaneously. The detailed data contention problem is described with respect to FIG. 2. FIG. 2 shows a 16 Mb bank 12, consisting of four 4 Mb blocks 16. Each memory block contains a plurality of wordlines (WL), each contacting a plurality of cells. Each memory block 16 also contains a plurality of redundancy wordlines (RWLs) 18, each containing a plurality of redundancy cells. For simplicity, the column redundancy are ignored, however, redundancy columns can also be integrated in a similar manner. Sense amplifiers 14 are typically arranged and shared between adjacent memory blocks 16. It is assumed that two wordlines (WL1 in memory block 1, and WL3 in memory block 3) are activated simultaneously. (Note that two WLs in memory block 0 and 1, or in memory blocks 2 and 3 cannot be activated simultaneously, since the sense amplifiers are shared between memory blocks 0 and 1 and memory blocks 2 and 3). The cell data from WL1 is amplified with sense amplifiers 14-b and 14-c, and the cell data from WL3 are amplified with sense amplifiers 14-d and 14-e. When the WL1 is defective, it should be replaced with redundancy wordline (RWL) as a redundancy replacement. A data contention problem occurs when the defective WL1 is replaced with RWL physically located in memory block 3. In this case, two wordline WL3 and RWL within memory block 3 are activated simultaneously. FIG. 3 is a detailed schematic, showing the WL3, RWL and sense amplifiers 24. The cells coupled to the WL3 and the redundancy cells couple to RWL store data independently. This makes sensing impossible, since two bit data is transferred to the pair of BLs for sensing. This problem is unavoidable when using the flexibly redundancy replacement with intra-block redundancy configuration. In conclusion, the FIG. 1c approach is only appreciable when one memory block is activated, otherwise, there is always a probability of data contention due to flexible redundancy replacement. FIG. 4 shows the flexible redundancy replacement with redundancy memory block concept which is similar to the FIG. 1b. It is assumed that WL0 in memory block 0 and WL2 in block 2 are activated simultaneously. When WL2 is defective, it is replaced with RWL physically located in redundancy memory block. The data contention problem can be avoided, since the redundancy memory block as sense amplifiers 14R, although this could result in an area penalty. It is, however, still a data contention problem when the WL0 and WL2 are both defective, and replaced simultaneously with two RWLs physically located in a single redundancy memory block. Having two redundancy memory blocks can overcome the data contention, however, it requires additional sense amplifiers. In conclusion, the FIG. 1b approach is not suitable when multi-blocks are activated simultaneously. The present invention overcomes this data contention problem in the multi-block activations, while allowing for flexible redundancy replacement spurting a plurality of memory blocks without having any additional sense amplifiers. SUMMARY OF THE INVENTION According to an embodiment of the present invention, the semiconductor memory having parallel redundancy replacement comprises a plurality of memory banks, each memory bank comprising a plurality of memory blocks, each memory block including a memory array and a sense amplifier bank, each memory array comprising a plurality of memory elements, where at least two of said memory arrays comprise a plurality of redundancy memory elements. The memory arrays are divided by sense amplifier banks wherein adjacent memory arrays share the sense amplifier bank there between. At least two redundancy memory elements arranged in at least two domains, each of said at least two domains comprising at least one of said memory arrays and at least one of said sense amplifier banks. The at least two of said memory arrays located within said at least two domains are accessed with the same logical address, and are replaced simultaneously with the at least two redundancy memory elements located in said at least two domains when at least one of the simultaneously accessed memory arrays is defective. The replacement does not use the same sense amplifier bank simultaneously. According to another embodiment, the method for improving yield in semiconductor memories comprises the steps of: providing a plurality of memory banks, each memory bank comprising a plurality of memory blocks, each memory block including a memory array and a sense amplifier bank, the memory arrays being divided by sense amplifier banks wherein adjacent memory arrays share the sense amplifier bank there between. At least two redundancy memory elements replace failed memory elements which are divided into a first domain and a second domain, the first domain and second domain existing in memory arrays that use different sense amplifier banks. A failed memory element is replaced by a redundant memory element in one of the first domain and the second domain, and a memory element corresponding to a logically same position as the failed memory element within a different memory array using a different sense amplifier bank than the memory array of the failed element is replaced by a redundant memory element in the other of the first domain and the second domain. The failed memory element is replaced by activating the redundant memory element in one of the first and second domains, and replacing the memory element corresponding to a logically same position as the failed memory element by activating the redundant memory element in the other of the first and second domains thereby reducing signal contention at the sense amplifier banks. BRIEF DESCRIPTION OF DRAWINGS This disclosure will present in detail the following description of preferred embodiments with reference to the following figures wherein: FIG. 1a is a redundancy architecture commonly used for low density DRAMS of the prior art; FIG. 1b is another redundancy architecture of the prior art employing a flexible redundancy replacement configuration; FIG. 1c is another redundancy architecture of the prior art employing a flexible redundancy replacement with an intra-block redundancy configuration; FIG. 2 is a schematic diagram showing a conventional interleaved sensing scheme for sense amplifiers; FIG. 3 is a schematic diagram showing a conventional sense amplifier with signal contention; FIG. 4 is a schematic diagram of a conventional memory bank; FIG. 5 is a schematic diagram of a memory bank in accordance with the present invention; and FIG. 6 is a plot of theoretical yield versus a number of defects for different repair regions. DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS The present disclosure relates to semiconductor memories and more particularly, to an improved method and apparatus for replacing defective row/column lines. In accordance with the present invention, a high replacement flexibility redundancy apparatus and method is employed to increase chip yield and prevent sense amplifier signal contention. A parallel redundancy is used to achieve this as well as to maintain a conventional number of fuses. A defective row/column line in a first memory array or memory block is replaced with a redundant row/column line from its own redundancy. A corresponding row/column line whether defective or not is replaced in a second memory array or memory block, which does not share sense amplifiers with the first memory block. The corresponding row/column is replaced to mimic the redundancy replacement of the first memory block thereby increasing flexibility and yield as well as preventing sensing signal contention. Referring now in specific detail to the drawings in which like reference numerals identify similar or identical elements throughout the several views, FIG. 5 schematically illustrates a 16 Mb memory bank 100. Memory bank 100 is partitioned into memory blocks 0 through 3. Each memory block includes a memory array 102 through 105 and a sense amplifier bank 106 through 110 disposed between each memory block. Sense amplifiers of sense amplifier banks 106 through 110 are shared between adjacent memory blocks, for example, sense amplifier bank 107 positioned between memory block 0 and memory block 1 is shared by both memory blocks 0 and 1. Redundant rows or columns may be included with each memory block. For illustrative purposes, the present invention will be described with reference to redundant rows and therefore will refer to redundant word lines. However, the invention also applies to redundant columns and is equally applicable for redundant bit lines. Also for illustrative purposes a 64 Mb memory chip having 16 Mb memory banks is used to describe the present invention. However, the present invention is applicable to memory elements having other sizes as well. As shown in FIG. 5, a redundancy memory element 112 is divided into two domains. A first domain 114 is located in, for example, memory block 0. A second domain 116 is located in a memory block in which sense amplifiers used for the first domain 114 are not used for the second domain 116, for example, memory block 2 or memory block 3. It is also contemplated that the present invention may include a redundancy divided between memory blocks 1 and 3 to achieve the same results. By equally dividing redundancy 112 between two memory blocks, first domain 114 serves as a replacement for defects in memory blocks 0 and 1 while second domain 116 serves as a replacement for defects in memory blocks 2 and 3. During operation, redundancy replacement of defective or malfunctioning word lines is performed in parallel. That is, a defective word line 118 in memory array 104 is replaced by a redundant word line located in second domain 116 as well as a corresponding redundant row in first domain 114 which does not share sense amplifiers with second domain 116. Instead of keeping the redundancy in one memory block as in the prior art, the present invention separates the redundancy between two memory blocks which do not share sense amplifiers. As in the prior art, two or a multiple of two word lines are simultaneously replaced to repair a defective word line. In the present invention, one word line is replaced in the memory block where the defect has occurred and a second is activated in a memory block that does not share sense amplifiers with the first memory block with the defective word line. The second redundant replacement is replaced whether there is a defect in that memory block or not. The second redundant replacement further corresponds to a location mimicking the location of the first redundant word line within their respective memory blocks. As shown in FIG. 5, defective word line 118 in memory block 2 is replaced by the redundant word line in second domain 116. The word line in memory block 0 is also replaced by a second redundant word line 114 located at the same location in memory block 0 as the location of the redundant word line used in memory block 2. The redundant word line 114 is used from memory block 0 regardless of whether or not there is a defect in memory block 0. By separating redundant replacement between memory block 0 and memory block 2, there is no signal contention at the sense amplifier banks since memory block 0 and memory block 2 do not share the same sense amplifiers. Even though redundancies have been equally separated, they work in parallel to give a fully flexible 16 Mb repair region for a 64 Mb memory chip. To illustrate the advantages of the fully flexible 16 Mb repair, FIG. 6 shows a plot of theoretical chip yield versus a number of defects on the chip for a 64 Mb memory chip. Curve 200 indicates the prior art redundancy method with a flexibility yielding a 4 Mb repair region. Curve 202 indicates the redundancy method of the present invention with a flexibility yielding a 16 Mb repair region. For the prior art curve 200 (i.e., 4 Mb intra-block redundancy replacement in FIG. 1a), about 30% fewer defects can be accommodated than for curve 202 assuming a 50% yield. Further, if clustering of defects is accounted for (define clustering), there would be an additional yield benefit for the 16 Mb repair region configuration and a further drawback for the 4 Mb repair region configuration. According to the present invention, a maximum possible repair region flexibility is achieved while signal contention during sensing of sense amplifiers is prevented. Further due to the parallel replacement configuration, which integrates redundancy wordlines in at least two of a plurality of memory arrays, no additional sense amplifiers are required. Having described preferred methods and embodiments for (which are intended to be illustrative and not limiting), it is noted that modifications and variations can be made by persons skilled in the art in light of the above teachings. It is therefore to be understood that changes may be made in the particular embodiments of the invention disclosed which are within the scope of the invention as outlined by the appended claims. Having thus described the invention with the details and particularity required by the patent laws, what is claimed and desired protected by Letters Patent is set forth in the appended claims.

Claims: A semiconductor memory having parallel redundancy replacement comprising: a plurality of memory banks (100), each memory bank (100) comprising a plurality of memory blocks (0,1,2,3), each memory block (0,1,2,3), including a memory array (102,103,104,105) and a sense amplifier bank (106,107,108,109,110) each memory array (102,103,104,105) comprising a plurality of memory elements (112), and at least two of said memory arrays (102,103,104,105) comprising a plurality of redundancy memory elements (112), said memory arrays (102,103,104,105) being divided by said sense amplifier banks (106,107,108,109,110) wherein adjacent memory arrays (102,103,104,105) share the sense amplifier bank (106,107,108,109,110) there between; at least two redundancy memory elements (112) arranged in at least two domains (114,116), each of said at least two domains (114,116) comprising at least one of said memory arrays (102,103,104,105) and at least one of said sense amplifier banks (106,107,108,109,110); wherein at least two of said memory arrays (102,103,104,105) located within said at least two domains (114,116) are accessed with the same logical address, and are replaced simultaneously with said at least two redundancy memory elements (112) located in said at least two domains (114,116) when at least one of the simultaneously accessed memory arrays (102,103,104,105) is defective, said replacement not using the same sense amplifier bank (106,107,108,109,110) simultaneously. The semiconductor memory having improved redundancy as recited in claim 1, wherein the redundancy includes word lines (108). The semiconductor memory having improved redundancy as recited in claim 1, wherein the redundancy includes bit lines. The semiconductor memory having improved redundancy as recited in claim 1, wherein each memory bank (100) includes four memory blocks (0,1,2,3) arranged substantially parallel to each other and the first domain (114) is located in a first memory block (0) and the second domain (116) is located in a third memory block (2). The semiconductor memory having improved redundancy as recited in claim 1, wherein each memory bank (100) includes four blocks (0,1,2,3) arranged substantially parallel to each other and the first domain (114) is located in a second memory block (1) and the second domain (116) is located in a fourth memory block (3). The semiconductor memory having improved redundancy as recited in claim 1, wherein the first domain (114) replaces failed memory elements in a first half of the memory bank (100) and the second domain (116) replaces failed memory elements in a second half of the memory bank (100). The semiconductor memory having improved redundancy as recited in claim 1, wherein each failed memory element and the memory element corresponding to the logically same position are replaced by at least one memory element in the first domain (114) and at least one memory element in the second domain (116) wherein the at least one memory element in the first domain (114) is equal in number to the at least one memory element in the second domain (116). The semiconductor memory having improved redundancy as recited in claim 1, wherein each memory bank (100) includes 16 megabits of memory. The semiconductor memory having improved redundancy as recited in claim 1, wherein each memory array (10,103,104,105) includes 4 megabits of memory. A method of improving yield in semiconductor memories comprising the steps of: providing a plurality of memory banks (100), each memory bank (100) comprising a plurality of memory blocks (0,1,2,3), each memory block (0,1,2,3) including a memory array (102,103,104,105) and a sense amplifier bank (106,107,108,109,110) the memory arrays (102,103,104,105) being divided by the sense amplifier banks (100) wherein adjacent memory arrays (102,103,104,105,106) share the sense amplifier bank (100) there between, at least two redundancy memory elements (112) for replacing failed memory elements divided into a first domain (114) and a second domain (116), the first domain and second domain (116) existing in memory arrays (102,103,104,105,106) that use different sense amplifier banks (100); replacing the failed memory element by activating the redundant memory element (112) in one of the first (114) and second domains (116); and replacing the memory element corresponding to a logically same position as the failed memory element by activating the redundant memory element (112) in the other of the first (114) and second domains (116) thereby reducing signal contention at the sense amplifier banks (106,107,108,109,110). The method of improving yield in semiconductor memories as recited in claim 10, wherein the step of replacing the failed memory element further comprises replacing the failed memory element by a plurality of memory elements. The method of improving yield in semiconductor memories as recited in claim 11, wherein the step of replacing the memory element corresponding to a logically same position as the failed memory element further comprises replacing the memory element corresponding to the logically same position as the failed memory element by a plurality of memory elements equal in number to the plurality of elements replacing the failed memory element. The method of improving yield in semiconductor memories as recited in claim 10, wherein the redundancy includes word lines (108). The method of improving yield in semiconductor memories as recited in claim 10, wherein the redundancy includes bit lines. The method of improving yield in semiconductor memories as recited in claim 10, further comprises the step of defining each memory bank (100) by four memory blocks (0,1,2,) arranged substantially parallel to each other, the first domain (114) being located in a first memory block (0) and the second domain (116) being located in a third memory block (2). The method of improving yield in semiconductor memories as recited in claim 10, further comprises the step of defining each memory bank (100) by four memory blocks (0,1,2,3) arranged substantially parallel to each other, the first domain (114) being located in a second memory block (1) and the second domain (116) being located in a fourth memory block (3). The method of improving yield in semiconductor memories as recited in claim 10, wherein the step of replacing the failed memory element (112) includes the steps of: replacing failed memory elements in a first half of the memory bank by using redundant memory elements (112) in the first domain (114); and replacing failed memory elements in a second half of the memory bank (100) by using redundant memory elements (112) in the second domain (116).

Inventors: DANIEL GABRIEL, KIRIHATA TOSHIAKI, DANIEL, GABRIEL, KIRIHATA, TOSHIAKI
Applicants: IBM, INFINEON TECHNOLOGIES CORP, INFINEON TECHNOLOGIES NORTH AMERICA CORP., INTERNATIONAL BUSINESS MACHINES CORPORATION
Application year: 1999
Main classification: G06F11
IPC codes: G11C29, H01L21, G11C11, H01L27