Magneto-optical recording medium

Abstract: In order to provide a magneto-optical recording medium which can select a single recording magnetic domain in the recording layer (4) accurately and expand and transfer the same to the reproducing layer (1), the magneto-optical recording medium is arranged in the following manner. That is, the magnetization direction of the reproducing layer (1) is in-plane at room temperature and shifts to perpendicular at or above a predetermined temperature T trans. . The recording layer (4) is a magnetic layer which is magneto-statically coupled to the reproducing layer (1) and shows the perpendicular magnetization up to its Curie temperature. The magnetic mask layer (3) is provided between the recording layer (4) and reproducing layer (1), and the magnetization thereof is reduced to 0 (zero) at or above a predetermined temperature (T m ) which is at or above T trans. . The magnetization of the magnetic mask layer (3) is larger than that of the recording layer (4) at least in a range between room temperature and T trans. .

Description: FIELD OF THE INVENTION The present invention relates to a magneto-optical recording medium In accordance with the precharacterizing part of claim 1. A magneto-optical recording medium of that kind is known from EP-A-0 863 504. BACKGROUND OF THE INVENTION Magneto-optical recording media are in practical use as erasable optical recording media. However, a known magneto-optical recording medium has a drawback that reproducing characteristics are deteriorated as the diameter of a recording bit serving as a recording magnetic domain and an interval between the recording bits become smaller than a beam spot of a light beam emitted from a semiconductor laser. The above drawback is caused by an event that individual recording bits can no longer be reproduced separately because the beam spot of a light beam focused on a target recording bit also encompasses recording bits adjacent to the same. In order to eliminate the above drawback, Japanese Laid-open Patent Application No. 150418/1994 (Japanese Official Gazette Tokukaihei No.6-150418 , published on May 31, 1994) proposes a magneto-optical recording medium having (1) a reproducing layer whose magnetization direction is in-plane at room temperature and shifts to perpendicular with increasing temperatures; (2) a recording layer which is magneto-statically coupled to the reproducing layer; and (3) a non-magnetic intermediate layer provided between the reproducing layer and recording layer. According to the above arrangement, the recording bits within a portion having the in-plane magnetization can be masked. Thus, even if the beam spot of a focused light beam encompasses more than one recording bit, the individual recording bits can be reproduced separately. Also, Japanese Laid-open Patent Application No. 7350/1996 (Japanese Official Gazette Tokukaihei No. 8-7350, published on January 12, 1996) and Japanese Laid-open Patent Application No. 21595/1998 (Japanese Official Gazette Tokukaihei No. 10-21595, published on January 23, 1998) show a reproducing method, in which a magnetic domain in the recording layer is transferred to the reproducing layer while the magnetic domain is being expanded by applying an external reproducing magnetic field. However, the method disclosed in Japanese Laid-open Patent Application No. 150418/1994 supra reveals that, when information is recorded and reproduced from the recording bits having smaller diameter and interval, a reproducing signal becomes less intensified, thereby making it impossible to obtain a satisfactory reproducing signal. Also, the method disclosed in Japanese Laid-open Patent Application No. 7350/1996 supra has a problem that, when the recording density is increased and so is the number of bits under the reproducing magnetic domain, the reproducing layer receives the magnetic fields from more than one recording bit in the recording layer. In this case, the reproducing layer can not receive the magnetic field from the target reproducing bit alone. Japanese Laid-open Patent Application No. 21595/1998 supra shows the magnetic domain expanding method with magneto-static coupling. According to this method, a second magnetic layer has a function of selecting a magnetic domain in the recording layer, and the magnetization thereof has temperature characteristics that the direction thereof shifts from in-plane to perpendicular lar with increasing temperatures. In this case, magnetization has to be transferred in two steps. To be more specific, the magnetization of the recording layer is transferred to the second magnetic layer by means of exchanged coupling first, and thence to the reproducing layer by means of magneto-static coupling. In other words, accurate information transfer from the recording layer to the reproducing layer involves a complicated procedure. Above-cited EP-A-0 863 504 being In correspondence with the precharacterizing part of claim 1 proposes to use an alloy Gd·Fe·Al, Nd·Fe, Nd·Fe·Al, Dy·Fe, Dy·Fe·Al or the like for the magnetic mask layer. SUMMARY OF THE INVENTION The present invention is devised to solve the above problems, and therefore has an object to provide a magneto-optical recording medium which can select a single recording magnetic domain in the recording layer accurately, and expand and transfer the same to the reproducing layer. In order to fulfill the above and other objects, a magneto-optical recording medium of the present invention is furnished with: a reproducing layer whose magnetization direction is in-plane at room temperature and shifts to perpendicular at or above a predetermined temperature T trans. ; a recording layer whose magnetization direction is perpendicular in a range between room temperature and a Curie temperature thereof, during which the recording layer being magneto-statically coupled to the reproducing layer; a magnetic mask layer which is provided between the reproducing layer and recording layer with an intermediate layer on the reproducing layer side, and whose magnetization direction is in-plane at room temperature, characterized in that the magnetic mask layer being made of Nd·Fe·Ni. According to the above arrangement, because the magnetic mask layer having larger magnetization than the recording layer up to the predetermined temperature T trans. is used, the magnetization of the recording layer can be masked in a stable manner, thereby improving a CNR as an effect. For a fuller understanding of the nature and advantages of the invention, reference should be made to the ensuing detailed description taken in conjunction with the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a view explaining the structural principle of a magneto-optical recording medium of the present invention; Figure 2 is a cross section of a magneto-optical recording disk according to a comparative example and to a preferred embodiment of the invention; Figure 3 is a graph showing magnetization versus temperatures of a magnetic mask layer and a recording layer of the magneto-optical recording disk In comparative example ; and Figure 4 is a graph showing magnetization versus temperatures of a magnetic mask layer and a recording layer of the magneto-optical recording disk in the preferred embodiment of the invention. Figure 1 shows the structural principle of a magneto-optical disk (magneto-optical recording medium) of the present invention. As shown in Figure 1, the magneto-optical disk at least includes a reproducing layer 1 whose magnetization direction is perpendicular during production; a non-magnetic intermediate layer 2; a magnetic mask layer 3 having 0 (zero) magnetization around a reproducing temperature; and a recording layer 4. Information is recorded in the recording layer 4 in the form of recording bits each having magnetization of certain magnitude. When a light beam is irradiated from the reproducing layer 1 side, a portion irradiated by the light beam has a temperature distribution of a Gaussian curve having the highest temperature around the center. Hereinafter, the temperature near the center of the beam is referred to as the reproducing temperature (T r ), and the temperature in the boundary portion, around which the magnetization direction of the reproducing layer 1 shifts from in-plane to perpendicular, is referred to as the transition temperature T trans. ) As previously mentioned, the magnetic mask layer 3 is made of a magnetic layer whose magnetization is reduced to 0 (zero) around the reproducing temperature (let T m be a temperature at which the magnetization is reduced to 0 (zero)), whereas the magnetization of the recording layer 4 is stable at the reproducing temperature. For this reason, the magnetic flux from the recording layer 4 is not masked by the magnetic mask layer 3 and leaked to the reproducing layer 1 at the reproducing temperature. On the other hand, the magnetization direction of the magnetic mask layer 3 is in-plane at T m or below, thereby preventing the magnetic flux from leaking to the reproducing layer 1 from the recording layer 4. If T trans. is set lower than T m , the magnetization of a target portion alone in the recording layer 4 can be selected accurately so as to leak the magnetic flux, thereby making it possible to form a large magnetic domain in the reproducing layer 1. Here, because the magnetization is transferred from the recording layer 4 to the reproducing layer 1 directly by means of magneto-static coupling, information can be transferred precisely. Reproduction can be realized by setting T r to a specific temperature, at or above which the magnetization of the magnetic mask layer 3 becomes smaller than that of the recording layer 4, because, by so doing, the magnetization leaks from the recording layer 4 to the reproducing layer i. However, setting T r as high as or above T m can further improve the reproducing characteristics because the magnetization of the magnetic mask layer 3 is reduced to 0 (zero). If the magnetic layer 3 is made of an alloy including a light rare earth metal and at least one 3d transition metal, the recording bits surrounding the target recording bit (namely, the recording bits adjacent to the target recording bit) can be masked in a satisfactory manner. Hence, the magnetization of these adjacent recording bits will not adversely affect the reproducing layer 1 as noises. The reason why is as follows. That is, in order to obtain large perpendicular magnetic anisotropy, the recording layer 4 is generally made of heavy rare earth metals and 3d transition metals. More specifically, for example, the recording layer 4 is made of Tb·Fe·Co (representing alloy made of Tb, Fe, and Co), or Dy·Fe·Co. The sublattice magnetization of heavy rare earth metals and that of the 3d transition metals are coupled to each other in anti-parallel. For this reason, . total magnetization of the recording layer 4 is an absolute value of a difference between the sublattice magnetization of heavy rare earth metals and that of the 3d transition metals. Contrarily, the sublattice magnetization of light rare earth metals and that of 3d transition metals are coupled to each other in parallel. For this reason, total magnetization of the alloy including light rare earth metals and 3d transition metals is a sum of the sublattice magnetization of light rare earth metals and that of 3d transition metals. Thus, if the magnetic mask layer 3 is made of light rare earth metals and transition metals, the magnetization of the magnetic mask layer 3 becomes far larger than that of the recording layer 4, thereby making it possible to mask the recording bits surrounding the target recording bit in a satisfactory manner. The light rare earth metals referred to herein are specified as rare earth metals whose 4f electron-shell is filled with half (seven) or less than half the electrons to its full, examples of which include La, Ce, Pr, Nd, Pm, Sm, and Eu. As will be described in the following examples, Nd is particularly preferable as the light rare earth metals. Also. the 3d transition metals referred to herein are defined as, of all the major transition elements which fill the d (electron)-shell. 21 Sc- 29 Cu which fill the 3d electron-shell. As will be described In the preferred embodiment of the invention, Fe and Nl are preferable as the 3d transition metals. Comparative Example The following will describe a comparative example of a magneto-optical recording medium in accordance with the above embodiment. Figure 2 is a cross section of a magneto-optical recording disk in accordance with the comparative example. As shown in Figure 2, for example, the magneto-optical recording disk includes: a disk of light-transmitting substrate 10 made of polycarbonate or glass; a dielectric layer 5 made of AlN, SiN, AlSiN, SiO 2 , etc; a reproducing layer 1 made of Gd·Fe·Co, Gd·Fe, Gd·Co, Gd·Dy·Fe·Co, Gd·Tb·Fe·Co, etc. whose magnetization direction is in-plane at room temperature and shifts to perpendicular at a certain temperature; a non-magnetic intermediate layer 2 made of AlN, SiN, AlSiN, etc.; a magnetic mask layer 3 made of Nd·Fe, whose magnetization is reduced to 0 (zero) around the reproducing temperature; a recording layer 4 made of Tb·Fe·Co, Dy·Fe·Co, Tb·Dy·Fe·Co, etc. whose magnetization direction is perpendicular in a range between room temperature and the Curie temperature; and a protective layer 6. The protective layer 6 is a protective layer made of a dielectric material, such as AlN, SiN, and AlSiN; metals, such as Al, Al-Ni, and Al-Ti; or a lamination of the dielectric layers and metals. Although it is not shown in the drawing, an overcoat layer is provided on the protective layer 6. The overcoat layer is formed by applying UV-curing resin or the like by means of spin coat. The magneto-optical disk of the comparative Example is manufactured in the following manner. To begin with, a sputtering apparatus is evacuated until the internal pressure reaches to 1 × 10 -5 Torr (approx. 1.33 × 10 -4 Pa). Then, the dielectric layer 5 made of AlN and having a film thickness of 60 nm is formed over the polycarbonate substrate (track pitch:1.6 µm; groove width and land width: 0.8 µm each) 10. The sputtering conditions are: a mixed gas of Ar and N 2 is introduced into the sputtering apparatus, and power is supplied to the Al target under a sputtering pressure of 2 × 10 -3 Torr (approx. 0.266 Pa). Then, the sputtering apparatus is evacuated again until the internal pressure reaches 1 × 10 -6 (approx. 1.33 × 10 -4 Pa). Subsequently, Ar gas is supplied to the apparatus, and power is supplied to the Gd·Fe·Co alloy target under a sputtering pressure of 5 × 10 -3 Torr (approx. 0.665 Pa), whereby the reproducing layer 1 made of Gd·Fe·Co is formed. The magnetization direction of the reproducing layer 1 thus formed is in-plane at room temperature, and T trans. and the Curie temperature thereof are 120°C and 330°C, respectively. Then, a mixed gas of Ar and N 2 is introduced into the sputtering apparatus, and power is supplied to the Al target under a sputtering pressure of 2 × 10 -3 Torr (approx. 0.266 Pa), whereby the non-magnetic intermediate layer 2 having a film thickness of 20 nm is formed. Then, the sputtering apparatus is evacuated again until the internal pressure reaches 1 × 10 -5 (approx. 1.33 × 10 -4 Pa). Then, Ar gas is supplied to the apparatus, and power is supplied to the Fe target and Nd target under a sputtering pressure of 5 × 10 -3 Torr (approx. 0.665 Pa), whereby the magnetic mask layer 3 made of Nd·Fe is formed. Here, the composition of the magnetic mask layer 3 is Nd 7.5 Fe 92.4 , and the magnetization is reduced to 0 (zero) at 130°C. Subsequently, power is supplied to the Tb·Fe·Co alloy target under a sputtering pressure of 5 × 10 -3 Torr (approx. 0.665 Pa), whereby the recording layer 4 made of Tb·Fe·Co is formed. The magnetization direction of the recording layer 4 thus formed is perpendicular in a temperature range between room temperature and the Curie temperature which is 220°C herein. Then, a mixed gas of Ar and N 2 is introduced into the sputtering apparatus, and power is supplied to the Al target under a sputtering pressure of 2 × 10 -3 Torr (approx. 0.266 Pa), whereby the protective layer 6 made of AlN and having a film thickness of 20 nm is formed. Then, the main body having 7 layers from the substrate 10 to the protective layer 6 is taken out from the sputtering apparatus, and the overcoat layer is formed on the protective layer 6 by applying the UV-curing resin by means of spin coat. A CNR (Carrier to Noise Ratio) of the magneto-optical disk comparative Example formed in the above manner measured, and compared with a CNR of a conventional disk. Here, the conventional disk is a disk arranged in the same manner as a super-resolution medium disclosed in Japanese Laid-open Patent Application No. 150418/1994 supra . To be more specific, the conventional disk includes: a substrate; an AlN dielectric layer (film thickness: 80 nm); a Gd·Fe·Co reproducing layer (film thickness: 50 nm); a Dy·Fe·Co recording layer (film thickness: 50 nm); an AlN protective layer (film thickness: 20 nm); and an overcoat layer. The CNRs of the medium of the comparative Example and the medium of the conventional disk are measured under the reproducing conditions: a 680 nm wavelength laser and a 0.55 NA (Numerical Aperture) lens at a linear velocity of 2.5 m/sec. with a bit length of 0.4 µm. Then, it is revealed that CNR is improved by 1.5 dB by the arrangement of the comparative Example. Then, the magnetization (magnitude) of the magnetic mask layer 3 made of Nd·Fe is examined by means of VSM (Vibrating Sample Magnetometer), the results of which are set forth in Figure 3 with the measuring results of the magnetization of the recording layer 4 made of Tb·Fe·Co. Figure 3 reveals that the magnetization of the magnetic mask layer 3 made of Nd·Fe is reduced to 0 (zero) at 130°C, and becomes larger than that of the recording layer 4 at or below 120°C which is T trans. of the reproducing layer 1. This happens because the magnetic mask layer 3 is made of alloy of light rare earth metal and 3d transition metal, whereas the recording layer 4 is made of alloy of heavy rare earth metal and 3d transition metals. More specifically, because light rare. earth metal and 3d transition metal are coupled to each other in parallel, total magnetization of the alloy is a sum of each magnetization. On the contrary, because heavy rare earth metal and 3d transition metal are coupled to each other in anti-parallel, total magnetization of the alloy is an absolute value of a difference among each magnetization. Therefore, the magnetic mask layer 3 made of light rare earth metal and 3d transition metal has larger magnetization than that of the recording layer 4 made of heavy rare earth metal and transition metals. With the magneto-optical disk employing the magnetic mask layer 3, when the magnetization of the magnetic mask layer 3 is reduced to 0 (zero) with increasing temperatures, the magnetization of the recording layer 4 is leaked to the reproducing layer 1 and reproduced. Because T trans. of the reproducing layer 1 is below T m at which the magnetization of the magnetic mask layer 3 is reduced to 0 (zero), the area of a magnetic domain formed in the reproducing layer 1 becomes larger than the recording bit in the recording layer 4, thereby improving the CNR. This process does not need a complicated transferring procedure, because recorded information is transferred directly from the recording layer 4 to the reproducing layer 1 by means of magneto-static coupling. In addition, the recording bits surrounding the target recording bit in the recording layer 4 are masked satisfactorily by the magnetic mask layer 3 which shows magnetism larger than that of the recording layer 4 and functions effectively (satisfactory masking effect is obtained). Consequently, the CNR can be improved by the above-described arrangement. Next, the optimal composition of the magnetic mask layer 3 made of Nd·Fe is examined. The magnetic mask layer 3 only has to suppress the leaking of the magnetization of the recording layer 4 to the reproducing layer 1. However, in practice, T m at which the magnetization is reduced to 0 (zero) is limited to a range between 100°C arid 250°C both inclusive due to the characteristics of the recording layer 4 and reproducing layer 1. If T m is below 100°C, the characteristics of the recording layer 4 are deteriorated. On the other hand, if T m exceeds 250°C, too much load is applied to the laser, particularly during the recording. For this reason, the Curie temperature of the recording layer 4 is practically set to up to 250°C. Thus, the composition with which the magnetization is reduced to 0 (zero) in a range between 100°C and 250°C both inclusive is examined by means of XRF (X-ray fluoroscopy) analysis, the results of which are set forth in Table 1 below. COMPOSITION (at %) ZERO MAGNETIZATION TEMPERATURE (°C) Nd13.0,Fe87.0 50 Nd10.5,Fe89.5 100 Nd 7.6,Fe92.4 130 Nd 6.0,Fe94.0 240 Nd 4.0,Fe96.0 >300 Table 1 reveals that, assume that the composition of Nd·Fe is indicated as Nd x Fe 100-x , then the suitable composition is in a range 6.0≤x≤10.5 (at %, an element ratio in the alloy). The characteristics of the reproducing layer 1 and recording layer 4 can be designed in accordance with the characteristics of the magnetic layer 3, and by designing the composition of the magnetic mask layer 3 within the above-specified range, a satisfactory masking effect can be obtained. Preferred embodiment of the Invention The following will describe a preferred embodiment of a magneto-optical recording medium of the present invention. The magneto-optical disk of the preferred embodiment is arranged in the same manner as the counterpart of the comparative example except that the composition of the magnetic mask layer 3 is changed to Nd·Fe·Ni. The magneto-optical disk of the preferred embodiment is manufactured in the same manner as the counterpart of the comparative example except for the forming step of the magnetic mask layer 3. More specifically, the sputtering apparatus is evacuated until the internal pressure reaches 1 × 10 -6 Torr (approx. 1.33 × 10 -4 Pa). Then, Ar gas is supplied and power is supplied to the Fe target, Nd target, and Ni target under a sputtering pressure of 5 × 10 -3 Torr (approx. 0.665 Pa), whereby a layer made of Nd·Fe·Ni is formed. The composition of the magnetic mask layer 3 thus formed is Nd 7-5 (Fe 5 Ni 95 ) 92-5 , and the magnetization thereof is reduced to 0 (zero) at 130°C. The CNR of the medium of Example 2 is measured under the reproducing conditions: a 680 nm wavelength laser and a 0.55 NA lens at a linear velocity of 2.5 m/sec. with a bit length of 0.4 µm. Then, it is revealed that CNR is improved by 1 dB compared with the arrangement of Comparative Example 1 above. Then, the magnetization (magnitude) of the magnetic mask layer 3 made of Nd·Fe·Ni is examined by means of VSM, the results of which are set forth in Figure 4 with the measuring results of the magnetization of the recording layer 4 made of Tb·Fe·Co. Figure 4 reveals that, with the magneto-optical disk employing the magnetic mask layer 3 made of Nd·Fe·Ni, the masking effect is attained and the CNR is improved for the same reason explained in Example 1. Next, the optimal composition of the magnetic mask layer 3 made of Nd·Fe·Ni is examined. The magnetic mask layer 3 only has to suppress the leaking of the magnetization of the recording layer 4 to the reproducing layer 1. However in practice, as explained in the comparative Example above, a temperature at which the magnetization is reduced to 0 (zero) is limited to a range between 100°C and 250°C both inclusive due to the characteristics of the recording layer 4 and reproducing layer 1. Thus, the composition with which the magnetization is reduced to 0 (zero) in a range between 100°C and 250°C both inclusive is examined by means of XRF analysis, the results of which are set forth in Table 2 below. COMPOSITION (at %) ZERO MAGNETIZATION TEMPERATURE (°C) Nd13.0(Fe5.ONi95.0)87.0 40 Nd10.5(Fe5.ONi95.0)89.5 100 Nd 7.5(Fe5.0Ni95.0)92.5 130 Nd 5.0(Fe5.0Ni95.0)95.0 220 Nd 4.0(Fe5.0Ni95.0)96.0 >300 Nd7.5(Fe30.0Ni70.0)92.5 130 Nd7.5(Fe70.0Ni30.0)92.5 130 Table 2 reveals that, assume that the composition of Nd·Fe·Ni is indicated as Nd x (Fe y Ni 100-y ) 100-x , then a particularly preferable range of the composition is 5.0≤x≤10.5 (at %) and 5.0≤y≤70.0 (at %). The characteristics of the reproducing layer 1 and recording layer 4 can be designed in accordance with the characteristics of the magnetic layer 3, and by designing the composition of the magnetic mask layer 3 within the above-specified ranges, a satisfactory masking effect can be obtained. As has been discussed, by using the magnetic mask layer 3 made of Nd·Fe·Ni, not only a satisfactory CNR can be obtained, but also the reproducing characteristics can be improved. In order to leak as much magnetization as possible from the target recording bit in the recording layer to the reproducing layer, a temperature (T m ), at which the magnetization of the magnetic mask layer is reduced to 0 (zero), may be set below T trans. of the reproducing layer. In this case, if such a temperature is far below T trans , the magnetization is leaked from more than one recording bit. Thus, preferably T trans. - 80(°C) ≤T n , and more preferably T trans. -60(°C) ≤T m is satisfied. Further, the arrangement of the magneto-optical disk is not limited to those described as preferred embodiment and an auxiliary reproducing layer or an auxiliary recording layer may be additionally provided, or the magnetic mask layer and recording layer may be magneto-statically coupled to each other. Further, the non-magnetic intermediate layer of a single-layer structure provided between the reproducing layer and magnetic mask layer may be replaced with any other layer which can prevent exchanged coupling between the reproducing layer and magnetic mask laver. The preferred-embodiment described the magneto-optical disk as an example of the magneto-optical recording medium, but the magneto-optical recording medium is not limited to the magneto-optical disk. For example, the magneto-optical recording medium may be a magneto-optical tape, a magneto-optical card, etc.

Claims: A magneto-optical recording medium comprising: a reproducing layer (1) whose magnetization, direction is in in-plane at room temperature and shifts to perpendicular at or above a predetermined transition temperature T trans ; a recording layer (4) whose magnetization. direction, is perpendicular in a range between room temperature and a Curie temperature thereof, during which said recording layer being magneto-statically coupled to said reproducing layer; and a magnetic mask layer (3) which is provided between said reproducing layer (1) and recording layer (4) with an Intermediate layer (2) on said reproducing layer side, and whose magnetization direction is in-plane at room temperature, characterized in that said magnetic mask layer is made of Nd · Fe · N1. The magneto-optical recording medium, of claim 1, wherein magnetization of said magnetic mask layer is reduced to 0 (zero) at or above a predeter- A mined temperature T m which is at or above said: predetermined transition temperature T trans. The magneto-optical recording medium of claim 1, wherein a composition of said Nd · Fe · Ni alloy of said magnetic mask layer is indicated as Nd x (FeyNi 100-y ) 100-x and wherein x is in a range 5.0≤x≤ 10.5 (at. %) and y is in a range 5.0≤y≤70.0 (at. %). The magneto-optical recording medium of claim 2, wherein said predetermined temperature T m is in arrange between 100° C and 250° C both inclusive. The magneto-optical- recording medium of claim 1, wherein magnetization of said magnetic mask layer is reduced to 0 (zero) at or above said predetermined temperature T m which satisfies said predetermined transition temperature T trans -80(°C)≤ said predetermined temperature T m .

Inventors: IKETANI NAOYASU, MIEDA MICHINOBU, MORI GO, TAKAHASHI AKIRA, IKETANI, NAOYASU, MIEDA, MICHINOBU, MORI, GO, TAKAHASHI, AKIRA
Applicants: SHARP KK, SHARP KABUSHIKI KAISHA
Application year: 1999
Main classification: G11B11
IPC codes: G11B11