PRECURSORS FOR GROWTH OF HETEROMETAL-OXIDE FILMS BY MOCVD

Abstract: Metalorganic precursors for deposition of strontium tantalum and strontium niobium oxides by MOCVD techniques have the formula: SR[M(OR1)6-xLx]2 wherein x is from 1 to 6; M is Ta or Nb; R1 is a straight or branched chain alkyl group; and L is an alkoxide group of formula (I) wherein n is 0 or 1; X is N or O; R2 and R3 are the same or different and a straight or branched chain alkyl groups; and R4 is a straight or branched, optionally substituted alkyl chain.

Description: PRECURSORS FOR GROWTH OF HETEROMETAL-OXIDE FILMS BY MOCVD DESCRIPTION The present invention relates to novel precursors for the production of heterometal oxide films by MOCVD, in particular precursors for the growth of strontium tantalum/niobium oxide films. The ferroelectric metal oxides (strontium bismuth tantalate (SrBi 2 Ta 2 θ9 or SBT) and strontium bismuth niobate (SrBi Nb 0 9 or SBN) have a net electric dipole in a certain direction which can be reversed by an applied voltage. These ferroelectric materials retain a remnant polarisation (i.e. charge) even after the power has been switched off which gives them a large potential application in computer technology as capacitor layers in non-volatile ferroelectric random access memories (NVFERAM's). NVFERAM's can also be switched extremely rapidly (in hundredths of a nanosecond) and are particularly suitable for military and space applications as they are radiation hard. Thin films of the layered perovskite strontium bismuth tantalate SrBi 2 Ta 2 0 9 (SBT), comprising ferro-electric pseudo-perovskite lattices sandwiched between bismuth oxide layers, have a large potential application as capacitor layers in non-volatile ferroelectric computer memories. In contrast to capacitors based on other ferroelectric oxides, such as Pb(Zr,Ti)O 3 , those based on SBT show negligible polarisation fatigue, are fully compatible with conventional Pt-electrode technology, and maintain good electrical properties, even when very thin. SBT thin films have been deposited by a variety of techniques including solgel, metalorganic decomposition, pulsed laser ablation and metalorganic chemical vapour deposition (MOCVD). MOCVD has a number of advantages over other deposition techniques as it offers the potential for large area growth, good film uniformity and composition control, and excellent conformal step coverage at device dimensions <2μm. The MOCVD technique is also fully compatible with existing silicon CVD processes. However for the full potential of MOCVD to be realised, it is essential that precursors with the required physical properties and decomposition characteristics are available. It is important that there is an adequate temperature window between precursor vaporisation and decomposition on the substrate, the precursors need to be compatible and not pre-react, they should decompose to form a pure film of the desired metal oxide at similar substrate temperatures. Ideally, the precursors should also be of low toxicity and be relatively stable under ambient conditions. The MOCVD of SBT and SBN has thus far been severely restricted by a lack of suitable metalorganic precursors. Conventional precursors include Sr(thd) 2 (where thd = 2,2,6,6- tetramethyl - 3,5 - heptanedionate), Bi(C 6 H 5 )3 and Ta(OPr) (thd) which are generally not compatible, having widely differing physical properties and/or decomposition characteristics. In an effort to alleviate this problem the Sr/Ta heterometal alkoxide [Sr{Ta(OPr')6} ] has been investigated as a precursor to SBT, in combination with Bi(OBu) 3 . A potential advantage of this approach is that the strontium and tantalum ratio in the precursor matches the required ratio in the deposited SBT film, however, there exists the possibility that the strontium and tantalum alkoxide species will partition during precursor evaporation and transport. Another disadvantage is that [Sr{Ta(OR) 6 } 2 ] precursors are relatively unsaturated making them susceptible to attack by moisture and reducing their shelf life in solution-based liquid injection MOCVD. It is an aim of the present invention to provide new metalorganic precursors for the MOCVD of SBT and SBN which may overcome the above-mentioned drawbacks. According to one aspect of the present invention there is provided a metalorganic precursor of the formula: - Sr[M(ORιVχLχ]2 wherein x is from 1 to 6; M is Ta or Nb; Ri is a straight or branched chain alkyl group; and L is an alkoxide group of the formula:- (R3)n wherein n=0 or 1; X is N or O; R 2 and R 3 are the same or different and are straight or branched chain alkyl groups, and R4 is a straight or branched, optionally substituted, alkyl chain. According to a second aspect, the present invention provides a method of depositing thin films of or contaixiing strontium metal oxides using metalorganic precursors in a MOCVD technique, wherein the strontium metal oxide precursor has the formula:- wherein x is from 1 to 6; M is Ta or Nb; Ri is a straight or branched chain alkyl group; and L is an alkoxide group of the formula: - (R3)n wherein n=0 or 1 ; X is N or O; R 2 and R 3 are the same or different and are straight or branched chain alkyl groups and R4 is a straight or branched, optionally substituted, alkyl chain. Preferably, x is 1 or 2. Optional substituents for R 4 may include amino, alkylamino or alkoxy groups. The deposition technique may comprise conventional MOCVD or, more preferably, liquid injection MOCVD. The solvent for deposition of the films by liquid injection MOCVD is preferably tetrahydrofuran. The alkoxy group ORi is preferably an ethoxy group but compounds of the invention where ORi is, for example, an iso-propoxy or tertiarybutoxy group may also be useful. Preferred precursors of the invention have the formula:- Sr[M(ORι) 5 L] 2 or Sr[M(ORι) L 2 ] 2 wherein M, Ri and L are as defined above. Preferably L is a dimethyl aminoalkoxide group, particularly dimethyl aminoethoxide (OCH 2 CH 2 NMe 2 or DMAE), dimethyl aminopropoxide (OCH(CH 3 )CH 2 NMe 2 or DMAP) or bis-dimethyl aminopropoxide (OCH(CH 2 NMe2)CH2 NMe 2 or bis-DMAP). Alternatively, L may be an alkoxy alkoxide group, particularly -CH 2 CH 2 OMe, -OCH(CH 3 )CH 2 OMe or -OCH(OMe)CH 2 OMe. The above-mentioned precursors may also be used in combination with a variety of bismuth (Bi) sources to deposit strontium bismuth tantalum and strontium bismuth niobium metal oxides. Suitable precursors for the source of bismuth include triphenyl bismuth (Bi(C6H 5 ) 3 ), Bi(thd) 3 , Bi(OCH 2 CH 2 NMe 2 ) 3 and Bi(OCMe 2 CH 2 OMe) 3 . The Bi(OCMe 2 CH 2 OMe) 3 precursor is particularly suitable as a co-precursor, being one of the most stable and volatile Bi alkoxide sources available. The Bi precursors may be evaporated separately or may be combined with the Sr[M(ORι)6-χL x ] 2 in a single solution. In the latter case, the bismuth precursor may have the general formula BiL 3 , wherein L is a dialkyl aminoalkoxide or alkoxy alkoxide group as hereinbefore described in relation to the strontium metal oxide precursor. Preferably, the dialkyl aminoalkoxide or alkoxy alkoxide group of the bismuth precursor is the same as that of the strontium metal oxide precursor. The single solution may be in an organic solvent such as ether or cyclic ether (eg. THF) or a hydrocarbon, such as hexane or heptane. The precursors of the present invention may be used in a method for depositing a strontium metal oxide ferroelectric film onto a substrate by MOCVD. A suitable substrate is, for example, Si(100). The ferroelectric films may be used, in particular, for the production of non-volatile ferroelectric random access memories. The use of MOCVD precursor solutions containing mixtures of metal alkoxides with nitrogen or oxygen donor functionalised ligands such as OCH 2 CH 2 NMe 2 or OCH 2 CH.2OMe can be readily extended to other oxide and mixed oxide systems. It has recently been shown that the dielectric constant of bulk Ta 2 0 5 can be significantly increased by the addition of a small percentage of Ti0 2 . This offers the potential for improved performance Ta 2 0 5 - based DRAM's. The precursor solutions described herein are likely to be appropriate for use in the MOCVD of the mixed Ta 2 θ5/Ti0 2 . A suitable precursor combination is Ta(OR) 4 DMAE and Ti(OR) 2 (L) 2 where R is preferably Et or alternatively may be Pr 1 , Pr n , Bu , Bu n etc., and L is DMAE, DMAP or bis - DMAP etc. This invention will be further described, by way of example only, with reference to the accompanying drawings in which: - Figure 1 illustrates the molecular structure of the novel precursor, Sr[Ta(OEt) 5 (bis-DMAP)] 2 ; Figure 2 is a plot of growth rates against substrate temperature achieved by MOCVD using two strontium tantalum precursors of the present invention; Figure 3 is a plot of growth rates against injection rate achieved by MOCVD using two strontium tantalum precursors of the present invention; and Figure 4 is a plot of growth rates against oxygen flow achieved by MOCVD using two strontium tantalum precursors of the present invention. The present invention examines the ways in which Sr/Ta and Sr/Nb atoms bind more strongly together in a single molecular precursor. The replacement of simple alkoxide groups by nitrogen or oxygen "donor-functionalised" alkoxides (i.e. L) increases the coordination number of highly positively charged metal centres. The crystal structure of [Sr{Ta(OEt) 5 (bis- dmap)} 2 ], the first structurally characterised Sr/Ta double metal alkoxide is illustrated in Figure 1 of the accompanying drawings. The functionalised alkoxide (such as DMAE) acts as a bridging and chelating ligand between the metal centres. This results in the precursors having appreciable volatilities and their high solubility in organic solvents favours their use in liquid injection MOCVD. The Sr/Ta and Sr/Nb alkoxide precursors of the present invention have the two metal atoms more strongly bound together with the Sr centre being more fully saturated with a coordination number of 6, rendering it less susceptible to attack by moisture. In the case of bis- DMAP, it is possible that the Sr centre becomes even more fully saturated with a co-ordination number of 8. The conventional bismuth precursors, e.g. Bi(CoHs)3 and Bi(thd) 3 may be used with the heterometal alkoxide precursors of the present invention to deposit SBT or SBN. Alternatively, bismuth alkoxides having the simple alkoxide groups (ie. -OR groups) substituted with an oxygen or nitrogen donor functionalised ligand (L), eg. DMAE or DMAP, may be used as the bismuth precursor. Preferably, the bismuth precursor Bi(OCMe 2 CH2OMe) 3 is used as the co- precursor, being one of the most stable and volatile Bi alkoxide sources available. The use of a bismuth precursor containing such alkoxide groups may enable Bi precursors to be used which have the same donor functionalised ligand as the strontium metal oxide precursor, to enable a single precursor solution to be used in the production of strontium bismuth tantalate or strontium bismuth niobate films, thereby greatly simplifying the MOCVD process and apparatus. The invention will also be further described by means of the following Example. Example Precursor Synthesis and Characterisations (I) Sr[Ta(OEt) 5 (dmae)] 2 A sample of [Sr{Ta(OEt) 6 }2] (16.9g, 17 rnmol) was dissolved in n- exane (500 ml) and bz ' s-dmaeH (3.1g, 34 mmol) was added with stirring. The mixture was boiled under reflux for 3 hours and was then allowed to cool. The n-hexane solvent was removed in vαcuo to leave a pale yellow oil, which was purified by vacuum distillation at 90-100°C (0.2mm Hg) to yield the product as a colourless liquid (yield 72%). IR (nujol mull, NaCI plates): 3350 s (broad), 2890 s (broad), 1645 m (broad), 1435 w. 1305 m, 1265 s, 1120-1070 s (v broad), 1000 m, 905 s, 825 m. 'H NMR (C6D 6 ):a(ppm) 1.64 (t,CH 3 , 30H), 2.63 (m, N-Cffj, N-CH2, 16Η), 4.71 (m, OCH 2 CH 3 , OCH 2 CH2N, 24H). (II) Sr[Ta(OEt) 5 (bis-dmap)] 2 A sample of [Sr{Ta(OEt) 6 }] (16.9g, 17 mmol) was dissolved in rc-hexane (500 ml) and όz ' s-dmapH (5g, 34 mmol) was added, with stirring. The mixture was boiled under reflux for 3 hours and after cooling, the solvent was removed in vacuo. The resulting pale yellow oil was vacuum distilled at 185-190°C (0.2 mm Hg) to yield a colourless liquid which solidified on standing to a white waxy solid (Yield 60%). Recrystallisation from «-hexane and storing at - 20°C for 2 weeks gave the product as colourless crystals. IR (Nujol mull, NaCI plates): 3400 s (broad) 2900 s (broad), 1600 w (broad), 1440 s, 1410 w, 1380 s, 1320 m, 1265 s, 1150-1050 s (v broad), 1000 m, 910 s, 835m, 820m. 'HNMR (CβD 6 ): a (ppm) 1.29 (t, CH S , 30H), 2.18 (m, N-CH 3 , N-CH 2 , 32H), 4,51 (m, OCH 2 CH 3 , OCH2bis-dmap. 22H) Microanalysis: Calculated For C 3 H 8 N 4 Oι 2 Ta 2 Sr : C, 34.3, H, 7.1; N, 4.7; Found C, 34.1, H, 7.1, N, 4.8. (HI) MOCVD of Strontium tantalum oxide thin films Thin films of SrTa2θ 6 were deposited by liquid injection MOCVD using 0.1 molar solutions of [Sr{Ta(OEt) (dmae)} 2 ] or [Sr{Ta(OEt) 5 (bis-dmap)} 2 ] in tetrahydrofuran solvent. The films were deposited over a range of substrate temperatures from 250 - 550°C on to Si(100) single crystal substrates using an MOCVD reactor. Table 1 below illustrates the growth conditions used to deposit the strontium tantalate for the two precursors:- Table 1. Growth conditions used to deposit strontium tantalate from Sr{Ta(OEt) s (dmae)} 2 ] and [Sr{Ta(OEt) 5 (bis-dmap)} 2 ] (a) [Sr{Ta(OEt) 5 (dmae)} 2 ] (b) [Sr{Ta(OEt) 5 (bis-dmap)} 2 ] (a) Approx. values assuming layer density = density of Ta 2 O 5 (8.2g cm°) Reactor pressure = 760 Ton- Evaporator temperature = 200°C Substrates Si(100) Figure 2 of the accompanying drawings illustrates the dependence of growth rate of the films on substrate temperature. Analysis of the films prepared using the precursor [Sr{Ta(OEt)5(dmae)} 2 ] by Auger electron spectroscopy (AES) showed that the films had the approximate composition SrTa 2 θ6, as shown in Table 2 below:- Table 2. AES data (composition in atom %) for strontium tantalum oxide films grown from [Sr{Ta(OEt) 5 (dmae)} 2 ] The double alkoxide compounds of the present invention may be used for the growth of strontium tantalate and strontium niobate on a simple liquid injection MOCVD reactor. The reactor has two inlet lines for vaporisation and transport of the Sr/Ta, Sr/Nb and Bi(OR) 3 precursors, as well as an inlet for an oxidant, such as oxygen gas. Figure 3 of the accompanying drawings illustrates the growth rate of a film of strontium tantalate against the injection rate of MOCVD using the strontium precursors SrTa 2 (OEt)ιo(DMAE) 2 and SrTa 2 (OEt)ι 0 (DMAP) 2 . Figure 4 shows the growth rate of the strontium tantalate against oxygen flow using the same precursors.

Claims: CLAIMS 1. A metalorganic precursor of the formula wherein x is from 1 to 6; M is Ta or Nb; Ri is a straight or branched chain alkyl group; and L is an alkoxide group of the formula: R 2 X - Rt - O (R 3 )m wherein n is 0 or 1 X is N or O R 2 and R 3 are the same or different and are straight or branched chain alkyl groups; and Rt is a straight or branched, optionally substituted alkyl chain. 2. A metalorganic precursor as claimed in claim 1, wherein x is 1 or 2. 3. A metalorganic precursor as claimed in claim 1 or 2, wherein R is substituted with an amino, alkylamino or alkoxy group. 4. A metalorganic precursor as claimed in claim 1, 2 or 3, wherein the alkoxy group OR] is an ethoxy group. 5. A metalorganic precursor as claimed in claim 1,2 or 3, wherein the alkoxy group ORi is an iso-propoxy group. 6. A metalorganic precursor as claimed in claim 1, 2 or 3, wherein the alkoxy group ORi is a tertiary butoxy group. 7. A metalorganic precursor as claimed in any one of claims 1 to 6 having the formula: Sr {M(OR,) 5 L}2 8. A metalorganic precursor as claimed in any one of claims 1 to 6 having the formula: SR {M(OR,) 4 L 2 } 2 9. A metalorganic precursor as claimed in any one of claims 1 to 8, wherein L is a dimethylaminoalkoxide group. 10. A metalorganic precursor as claimed in claim 9, wherein L is dimethylaminoethoxide. 11. A metalorganic precursor as claimed in claim 9, wherein L is dimethylaminopropoxide . 12. A metalorganic precursor as claimed in claim 9, wherein L is bis- dimethy laminopropoxide . 13. A metalorganic precursor as claimed in any one of claims 1 to 8, wherein L is an alkoxyalkoxide group. 14. A metalorganic precursor as claimed in claim 13, wherein L is -OCH2CH 2 CH 3 . 15. A metalorganic precursor as claimed in claim 13, wherein L is -OCH(CH 3 )CH 2 CH 3 . 16. A metalorganic precursor as claimed in claim 13, wherein L is -OCH(CH 3 )CH 2 OCH 3 . 17. The metalorganic precursor Sr{Ta(OEt) 5 (bis-dmap) 2 , wherein bis-dmap is bis- dimethylaminopropoxide. 18. The metalorganic precursor S[Ta(OEt) 5 (dmae)] 2 , wherein dmae is dimethylamino ethoxide . 19. A method of depositing thin films of or containing strontium metal oxides using metalorganic precursors in an MOCVD technique, wherein the strontium metal oxide precursor has the formula wherein x is from 1 to 6; M is Ta or Bn; Ri is a straight or branched chain alkyl group; and L is an alkoxide group of the formula: R 2 wherein n is 0 or 1 X is N or O R 2 and R are the same or different and are straight or branched chain alkyl groups; and Rt is a straight or branched, optionally substituted alkyl chain. 20. A method as claimed in claim 19, wherein x is 1 or 2. 21. A method as claimed in claim 19 or 20, wherein R is substituted with an amino, alkylamino or alkoxy group. 22. A method as claimed in claims 19, 20 or 21, wherein the alkoxy group OR] is an ethoxy group. 23. A method as claimed in claim 19, 20 or 21 wherein the alkoxy group ORi is an iso-propoxy group. 24. A method as claimed in claim 19, 20 or 21, wherein the alkoxy group ORi is a tertiary butoxy group. 25. A method as claimed in any one of claims 19 to 24, wherein the strontium metal oxide precursor has the formula: Sr{M(OR 5 L} 2 26. A method as claimed in any one of claims 19 to 24, wherein the strontium metal oxide precursor has the formula: Sr{M(OR,) 4 L 2 } 2 27. A method as claimed in any one of claims 19 to 26, wherein L is a dimethylaminoalkoxide group. 28. A method as claimed in claim 27, wherein L is dimethylaminoethoxide. 29. A method as claimed in claim 27, wherein L is dimethylaminopropoxide. 30. A method as claimed in claim 27, wherein L is bis-dimethylaminopropoxide. 31. A method as claimed in any one of claims 19 to 26, wherein L is an alkoxyalkoxide group. 32. A method as claimed in claim 31 , wherein L is -OCH 2 CH 2 OCH 3 . 33. A method as claimed in claim 31, wherein L is -OCH(CH 3 )CH 2 OCH 3 . 34. A method as claimed in claim 31 , wherein L is -OCH(OCH 3 )CH 2 OCH 3 . 35. A method as claimed in claim 19, wherein the metalorganic precursor is Sr[Ta(OEt) 5 (bis-dmap), wherein bis-dmap is bis-dimethylaminopropoxide. 36. A method as claimed in claim 19, wherein the metalorganic precursor Sr[Ta(OEt) 5 (dmae)] 2 , wherein dmae is dimethylaminoethoxide. 37. A method as claimed in any one of claims 19 to 36, for depositing strontium bismuth tanatalum metal oxides or sfrontium bismuth niobium metal oxides by including a bismuth metalorganic precursor. 38. A method as claimed in claim 37, wherein the bismuth precursor is selected from Bi( 6 H 5 ) 3 , Bi(thd) 3 , Bi(OCH 2 CH 2 NMe 2 ) 3 and Bi(OCMe 2 CH 2 CH 2 OMe) 3 . 39. A method as claimed in claim 37 or 38, wherein the bismuth and sfrontium precursors are evaporated separately. 40. A method as claimed in claim 37 or 38, wherein the bismuth and sfrontium precursors are combined in a single solution for MOCVD. 41. A method as claimed in claim 40, wherein the bismuth precursor has the same ligand L as the sfrontium precursor. 42. A method as claimed in claim 40 or 41, wherein the precursor solution is an organic solvent selected from ethers, cyclic ethers and hydrocarbons.

Inventors: CROSBIE MICHAEL JOHN, JONES ANTHONY COPELAND, LEEDHAM TIMOTHY JOHN, WRIGHT PETER JOHN, CROSBIE, MICHAEL, JOHN, JONES, ANTHONY, COPELAND, LEEDHAM, TIMOTHY, JOHN, WRIGHT, PETER, JOHN
Applicants: CROSBIE MICHAEL JOHN, INORGTECH LIMITED, JONES ANTHONY COPELAND, LEEDHAM TIMOTHY JOHN, SECR DEFENCE, WRIGHT PETER JOHN, CROSBIE, MICHAEL, JOHN, JONES, ANTHONY, COPELAND, LEEDHAM, TIMOTHY, JOHN, THE SECRETARY OF STATE FOR DEFENCE ACTING THROUGH, WRIGHT, PETER, JOHN
Application year: 1999
Main classification: C07F9
IPC codes: C07C31, C07C217, C07F7, C07F9, C23C16, C23C18, H01L21