STABILIZED AND CONTROLLED ELECTRON SOURCES, MATRIX SYSTEMS OF THE ELECTRON SOURCES, AND METHOD FOR PRODUCTION THEREOF

Abstract: An electron source is proposed where a field emitter is formed by a whisker grown epitaxially on a substrate. A ballast resistor and an active area are placed in the body and/or on the surface of the field emitter. The ballast resistor can be realized as a barrier in the shape of n-n+, p-p+, p-n semiconductor junctions or insulating layer that crosses the charge carrier flow. Components for controlling such electron sources are arranged vertically. This allows to decrease significantly the area taken by the components, and, in such a way, to increase the resolving power of devices and expand fields of their applications. In so doing, owing to whisker-grown field emitters it is possible to control the emission currents by low voltages at strong electric fields.

Description: 2 current Such a design decreases principally the sizes of the electron source three time, as minimum, because its control component takes the same place as the field emitter itself Such an electron source allows to regulate the voltage so that the starting voltage for the field emission is decreased and. in such a way, the uniform emission is ensured A plurality of emitters, actmg through diodes and operating actually as ballast resistors, are placed onto the cathode electrode Such a design ensures the uniformity of the field emission and. simultaneously, its controllability However, the proposed in [5] components of stabilization and control of the field emission current are insufficient for successful solving of the problems of uniformity and controllability In the patent [6] a more complete using of the advantages of the field emitters is realized The field emitter is considered as a spatially distributed object (various parts of which serve as functional components of a device) rather than as a "material point" of the field emission, without spatial characteristics of their various parts According to the patent [6] components for control of the electron source are transformed from the planar arrangements, as it was done in [3,4], into a vertical arrangement Thus, a principal role in the stabilization and control of the field emission current is assigned (allocated), to the body and to the surface of the field emitter, in addition to the usual role of its top Similar to [3-5] in the patent [6] an extracting electrode acts to electrons placed in the emitter top In [6] electron sources are considered where the field emitters have sufficient length and thickness Therefore, from the point of the action of the control electrodes or barriers (such as the diode in [5]), as minimum four areas of the electron sources are considered the substrate on which the field emitter is placed, the basis of the field emitters, the top of the field emitters, their bodies These are areas of selective activation, or active areas So, the active area is an area in the substrate, in body of the field emitter, in its basis or at its top A connection of the source of the charge carriers with the field emitter is implemented through the areas, and a control of the field emission current (of the charge carriers flow) from one area to another by means of stimulation and extracting is implemented In some cases, however, such a control of the charge carrier flow can not be realized in [6] This is related to the fact that the field emitter, being under the action of a rather high electric field, for example, of the anode one, is subjected to its influence not only to the area of the top of field emitter but also all over the body As a result, such electric field, actmg to the field emitter, "shorts out" an action various barriers and over control components The method for preparation of the field emitters by "wet" or "dry" etching used in the patent [6] results in formation of the emitters having small ratios of the length / of the active area to its diameter d In this case, for controlling of the field emission current, too large voltage must be used in order to compensate the action of the large external (for example, of anode) electric field Indeed, if the field emitter, containing a part with the p-type conductivity is placed in the electric field E (Fig 3C), formed by the anode, the boundary of the first of the first p-n junction 04 is 3 shifted E j to the p-area At a certain value E, the first junction 04 approaches to the second one 06 in such an extent that the electrons from the n-area c begin tunneling through the narrowed barrier to the field emitter This causes emission of electrons from field emitter This is the "shorting out" under the external electric field Existence of the control electrode near the field emitter both in traditional (Fig 3A) and in the considered [6] version (Fig 3B) can compensate the action of the penetrating electric field and, such a manner, to lock ' the charge carriers of the second n-area c However, it is known that, at the geometric sizes, considered in [6], the length / of the p-area is compatible with or and even shorter than the width d As it is know for "lockmg" of the charge carriers value of the traverse electric field of the control electrode 02 or 08 must be comparable with the longitudinal field responsible for the charge carrier flow This makes it necessary to apply large voltages to the control electrodes In addition, in the patent [6] the control electrodes stimulate the flowing of the charge earners through the active area and extract the electrons from the field emitter In such a way, the electron emission is stabilized and controlled At the same time the control electrodes in [6] does not lock the flow of the charge carriers through the active area The above function of the control electrodes - to stimulate the flowing of the charge carriers, makes it necessary mentioned in [6] approximate sizes of p-area as " formed to no more than several microns in thickness and generally to submicron order thickness" (see column 8, last paragraph in [6]) This means that the authors of [6] did not consider a possibility to provide the control electrode by "lockmg" function and. as a result, they considered the design is which enough just for stimulation and which is not enough for locking the electrons move under the influence of strong external electric field However, it is known that if the control electrodes can lock the flow, it is possible to use small (in absolute value) negative voltage for the locking of the flow The just mentioned approach is very important from practical point of view - to use low voltage "electric keys" in different driving systems, for example, in the field emission displays Such a version can not be realized in [6] due to small value of the characteristic 1/d that is there approximately equal to 1 which is provided by the design proposed in [6] In this invention, the drawback is overcome owing to the fact that, here, for stabilization and controlling of the field emission a whisker ("filament crystal") characterized by l d»l is used A method for preparation of the whiskers with traverse p-n junctions is also proposed m this invention As a result, the design proposed allows to control the field emission by locking the charge carrier flow The approach proposed is especially important at creation of effective long-living flat panel displays Indeed, the higher the anode (accelerating) electric field, the more effective and long-living are their phosphors because, the efficiency is larger at higher voltages Also at the increasing of anode voltage in such devices and, accordingly, decreasing of the current the durability of the phosphors is increased The high accelerating voltage allows to use a protecting coating layer (for example, aluminum) that prevents the decomposition of the phosphors and increases the illumination owing to the light reflection In addition the decreasing currents are useful for the field emitters themselves (especially of semiconductor emitters) because at high currents the emitters are heated resulting in their degradation In this invention various possibilities for the stabilization and control of the field emission current based on using of epιta\ιall\ grown whiskers are proposed Bv whisker growing, the ratio l/d 4 can implemented as 5-10 and more times. In addition, with the whisker grown field emitters broad possibility for shape variation and creation of the control electrodes can be realized. In particular, a design with step-shaped emitter is proposed Fig. 4c. According to this invention, the field emitter is implemented of whisker that includes at least one barrier ( for example, n. n+, p, p+ or p-n junction), e.i.. the barrier is placed in the body of the field emitter, being at some height /?>0 (Fig. 4a) above the substrate, e.i., above its own basis. At the same time in the patents [3,5] one of the barrier is placed at the basis of the field emitter being either at the upper level of the substrate or below it. As it was mentioned above the active area can be placed both in the basis of field emitter [5], top [3,5] or substrate [3], and in the body of the field emitter [6]. In this invention a version is proposed when the active area is placed on side surface of the field emitter or in the body of the material that has direct or indirect contact with substrate or field emitter. The active area can be placed also in thin surface conductive layer arranged on an insulating substrate. Thus, the version of the controlling electron source as purposed in this invention not only has solved the problem of transferring the stabilizing and controlling components from their planar arrangement to vertical one (and, in such a way, of increasing the resolution of the device) but also allows to conserve the controllability of the emission current by means of low voltage. In such a way, this allows to realize said controllability both in the case of low and high external electric field. In the patent [6], as it was mentioned above, the method for fabrication of the field emitters with traverse p-n junctions. However, this method does not allow to obtain optimal geometric parameters of the field emitter that gives necessary functional characteristics. The methods for growing oriented whiskers arrays are known [7, 8, 9, 10]. The methods, however, does not contain procedures for preparation of the junction, for example, like p-n. In this invention, such procedures are proposed. SUMMARY OF THE INVENTION An electron source is proposed, the source including a field emitter, a substrate, a source of charge carriers, and at least one ballast resistor. The field emitter is implemented of a whisker epitaxially grown on the substrate, and at least one ballast resistor is implemented as a barrier which is represented as a boundary in the body of the field emitter. The boundary is formed by a contact of materials with different kinds of conductivity. In the electron source the field emitter is implemented of at least one semiconductor material. At least one barrier in the electron source is formed by junction of materials with different kinds of conductivity, such as n, n+, p, p+ kinds. At least one barrier is formed by an insulating layer that is across to direction of charge carriers flow. The field emitters is formed by a tip, the tip consisting of two coaxial parts, a broad lower pan and a more narrow upper part. The field emitter can be also formed by a blade. The tops of the field emitters are sharpened and coated by diamond or diamond-like material, and the coatings can be sharpened, too. 5 At another version of the electron source the barrier is formed by a boundary between a body of the field emitter and a conducting layer placed on a surface of the field emitter. In the electron source, at least one ballast resistor is implemented as a barrier which is represented as a boundary in the field emitter body, the boundary being formed by contacts of the materials with different kinds of conductivity. The field emitter is implemented of at least one semiconductor material, and the conducting layer is also implemented of at least one semiconductor material. At least one barrier in the field emitter is formed by junction of materials with different kinds of conductivity, such as n. n+, p, p+ kinds. In another version of the electron source at least one barrier is formed by an insulating layer that is across to the direction of charge carriers flow. The field emitter can be formed either by a tip or by a blade. In the case of the tip shape the field emitter consists of two coaxial parts, a broad lower part and a more narrow upper part. The top of the field emitter is sharpened and coated by diamond or diamond-like material, the coating being sharpened, too. The source of the charge carriers is connected to the field emitter via substrate andor a conducting layer placed on a surface of the field emitter directly or via an insulating layer. In one more version of the electron source the substrate has a shape of a tip and is formed by an insulator and by a conductive layer, the ballast resistor being implemented by the layer. The conductive layer in the electron source contains at least one barrier for charge carriers. At least one barrier in the electron source is formed by junction of materials with different kinds of conductivity, such as n, n+, p, p+ kinds, and at least one barrier is formed by insulating layer that is across to direction of charge carriers flow. In one more version the electron source can be controlled containing at least one control electrode. The electron source can contain at least one active area in the body and/or on the surface of the field emitter. The active area can be realized in conducting layer placed on the surface of the substrate and/or of the field emitter directly or via an insulator layer. At least one control electrode is placed close to one barrier for the charge carriers or on side surface of the field emitter via an insulator layer. The control electrode is separated from the field emitter by a vacuum gap or placed along the field emitter. The control electrode can has a direct contact with die side surface of the field emitter. The substrate in the controlled electron source can be crystalline, or can be implemented by an insulator and a conductive layer placed on the insulator. The substrate can be implemented of the single-crystalline material with orientation ( 1 1 1). The surface of the substrate can be coated by a material which is transparent for electrons and which prevents outlet of chemical elements from the surface of the controlled electron source, the material being diamond or diamond-like carbon. The invention is also considered a matrix of the controlled electron sources containing at least two controlled electron sources. The matrix can contain a two-dimensional system of mutually perpendicular rows of the controlled electron sources, at least one of the control electrode of the 6 electron sources having a diaphragm shape and being implemented of diamond or diamond-like material. The substrate on which the controlled electron source are arranged is implemented of conductive material placed on an insulator. The matrix contains conductive buses which form two systems where buses of each of the systems are mutually parallel whereas the buses of two different systems are mutually perpendicular, the systems the two systems being placed in two levels and separated by an insulating layer. This invention proposes also a method for preparation of controlled electron sources including a formation on a solid substrate of field emitters each of that contains at least one transverse junction formed by materials having different electrical conductivity, a formation of at least one controlled electrode close to such junctions, where the field emitters are implemented of whiskers epitaxially grown by the vapor-liquid-solid mechanism. The implementation of the field emitters can includes formation of the hollows in the substrate and deposition of solvent particles at the bottom of the hollows. The implementation of the field emitters can also includes placing of solvent particles on the substrate and etching of the substrate around the particles. According to mentioned above the method can includes further procedure for formation of the field emitters, that is to say, placing of a source material, having a first kind of conductivity, opposite to the substrate with the solvent particles on it, growing of whiskers having the first kind of conductivity, stabilized cooling of the grown whiskers, having the globules on its tops, with an introduction of an inert gas into atmosphere, with simultaneous decreasing of the temperature of the substrate, changing of the source material for another source having a second kind of conductivity, stabilized heating of the grown whiskers, having the globules on its tops, with an introduction of an inert gas into atmosphere, with simultaneous increasing of the temperature of the substrate, and growing of whiskers having the second kind of conductivity. The method also include possibility to change the source materials more than two times. According to mentioned above the method can also includes further procedure for formation of the field emitters includes growing of whiskers in a gaseous atmosphere containing the element or elements of which the substrate consists, introduction of doping gaseous compounds into the gas atmosphere. According to the method the formation of the field emitters can includes more than one procedure of introduction into the gas atmosphere of different gaseous doping compounds. BRIEF DESCRIPTION OF DRAWINGS Fig. 1. Illustration of the field emission cathode according to the prior art [5]. 1 - substrate; 2 - cathode; 3 - diode; 4 - metallic layer; 5 - semiconductor layer; 6 - emitter; 7 insulating layer: 8 - control electrode. Fig. 2a, 2b. Illustrations of the field emission devices according to the prior art [3]. Fig. 3a, 3b. Illustrations of the field emission devices according to the prior art [6]. 7 01 - top of field emitter. 02 - control electrode, 03 - insulator. 04 - barner (junction), 06 - barner (junction), 08 - control electrode. 09 - conductive part of substrate. 09ι - insulator part of substrate, a, b, c - areas of various conductivity kinds, e - position of active areas Fig 3c Illustration of the field emitter with various function areas of the pπor art E - external electric field, E j - vanous positions of junction boundary (for example, p-n) under the influence of external electric fields of various value, E, - position of junction boundary when electrons start to flow through junction. 1 - length of the active area, d - width of the active area Fig. 3d. Illustration of the method for preparation of the field emitter according to [6] 12, 13, 14 - layers with different kinds of conductivity Fig. 4a, 4b, 4c, 4d, 4e. Illustrations of the stabilized electron sources according to the present invention q - possible movement of charge carriers, h - height of the position of the barrier above the substrate, 00 - insulator if charge earners are provided via surface layer, 00 - conductive material if charge carriers are provided via substrate Fig. 5a, 5b, 5c, 5d Illustrations of the controlled electron sources according to the present invention Fig. 6a Illustration of the matrix system of the controlled electron sources according to the present invention 07 - aperture Rows of control electrodes 02 and 08 are mutually perpendicular , and together realize the controlling of the emission of the matrix system Fig. 6b Illustration of the matrix system of the controlled electron sources according to the present invention Rows of control electrodes 02 and rows of conductive stripes 09 of substrate based on insulate part 09ι of the substrate are mutually perpendicular , and together realize the controlling of the emission of the matrix svstem Fig. 7. Illustration of grown silicon whisker with transversal barriers (junctions) 15 - solidified globule consist g of crystallites of silicon and solvent, by acting to the whisker with a chemical etch of silicon, the whisker is transformed into tip with simultaneous removal of the globule BEST VERSION FOR REALIZATION OF THE INVENTION EXAMPLE 1 A most typical version for realization of the stabilized electron sources that uses a barrier as a ballast resistor is the following A thin layer of n-type silicon is deposited onto p- type silicon tip that epitaxial to substrate (Fig 4d) The junction between the p-type of silicon and the n-type silicon coating acts as a ballast resistor EXAMPLE 2 A most typical version for realization of the controlled electron sources that uses a vertical arrangement of the control components is the following The tip contains in its body two p-n junctions An upper part of the tip is implemented of n-type material A lower part of the tip as well 8 as the adjacent substrate are implemented of n-type material A control electrode is placed at a middle part of the tip which is implemented of p-type matenal The control electrode has an extended length, is placed on the surface of the tip and has with it a direct contact (Fig 5 c) When a voltage V ope - is applied to the control electrode, an inverse layer is induced at the area b along the surface of the field emitter, and electrons from the area c begin to penetrate into area a through the inverse layer Then the electrons are emitting from the field emitters under the action of the anode voltage EXAMPLE 3 A most typical version for realization of the matrix system of the controlled electron sources that uses the vertical arrangement of the control components is the following Rows of sharpened whisker-grown field emitters 01 are formed on a conducting substrate 09 of silicon hav g the crystallographic orientation (111), see Fig 6a A system of parallel rows of control electrodes 08 is formed on the surface of the field emitters, the insulating layers 03 being placed between the field emitters and the control electrodes Then, an insulating glass layer 03' is deposited on the structure After that, a set of parallel stripes 02 is deposited onto the glass, and centro- symmetπcal cavities 07 are formed at the places corresponding to the emitters so that the upper ("top") of each of the emitters are in the centers of the cavities be g risen above their bottoms It important that the set of the stripes 02 is perpendicular to the system of parallel rows of the control electrode 08 In order to obtain an emission from a given field emitter, it is necessary to apply a voltage V open to a row in the system of the control electrodes 08 and, simultaneously, to apply a voltage V„, to a stnpe in the set 02 At the cross of the row and of the stnpe, the sum voltage opcπ + V e I initiates the emission 9 REFERENCES 1 I Brodie, P R Schwoebel, Vacuum Microelectronic Devices, Proceedings of the IEEE Vol 82 No 7, July 1994 2 W Zhu, G P Kochanski, S Jin and L Siebles J Appl Phys 78 ( 1995) 2707 3 H F Gray Regulatable field emitter device and method of production thereof US Pat 5 359256, Cl 313/169 (1994) 4 Junji Itoh, Takayuki Hirano, and Seigo Kanemaru, Ulfrastable emission from a metal- oxide-semiconductor field-effect transistor-structured Si emitter tip, Appl Phys Lett 69 (1 1), 9 September 1996, p 1577 5 Yoichi Koboπ, Mitsuru Tanaka, Field emission cathode, US Pat 5 162 704, Cl 315/349 (1992) 6 Seigo Kanemaru, Junji Itoh, Field emitter having source, channel, and dram layers, US Patent 5,710,478, Date of patent 20 01 1998 7 E I Givargizov, Method and apparatus for growing oriented whisker arrays, RU Patent 2 099 808, 20 12 1997r 8 Yoshinon Term, Ryuichi Terasaki, Method for producing single crystal, and needle-like smgle crystal, US Patent # 5,544,617 Date of patent 13 08 1996 9 Didier Pribat et al, Method for the controlled growth of crystal whiskers and application thereof to the making of tip microcauiodes 10 Michio Okajima et al, Fabrication method of fine structures, US Patent 5,381,753 Date of patent 17 01 1995 10 CLAIMS Jl An electron source that includes a field emitter, a substrate a source of charge earners, at least one ballast resistor wherein the field emitter is implemented of a whisker epitaxially grown on the substrate, at least one ballast resistor is implemented as a barrier which is represented as a boundary in the body of the field emitter the boundary bemg formed by contact of materials with different kinds of conductivity 2 The electron source according to the claim 1 , wherein the field emitter is implemented of at least one semiconductor material 3 The electron source according to the claim 2, wherein at least one bamer is formed by junction of materials with different kinds of conductivity, such as n n * , p, p ^ kinds 4 The electron source according to any of the claims 1-3, wherein at least one barner is formed by an insulating layer that is across to the direction of the charge carriers flow 5 The electron source according to any of the claims 1 -4, wherein the field emitter is formed by a tip 6 The electron source according to any of the claims 1-5, wherein the field emitter consists of two coaxial parts, a broad lower part and a more narrow upper part 7 The electron source accordmg to any of the claims 1-4, wherein the field emitter is formed by a blade 8 The electron source according to any of the claims 1-7, wherein the top of the field emitter is sharpened and coated by diamond or diamond-like material 9 The electron source accordmg to the claim 8, wherein the diamond or diamond-like coating is sharpened 1U An electron source that includes a field emitter, a substrate, a source of charge earners, at least one ballast resistor, wherein the field emitter is implemented of a whisker epitaxially grown on the substrate, at least one ballast resistor is implemented as a barrier formed by a boundary between a field emitter bodv and a conducting layer placed on a surface of the field emitter 11 The electron source according to the claim 10, wherein at least one ballast resistor is implemented as a bamer which is represented as a boundary in field emitter body, the boundary being formed by contact of the materials with different kinds of conductivity 12 The electron source according to any of the claims 10 1 1 , wherein the field emitter is implemented of at least one semiconductor material 13 The electron source according to any of the claims 10-12, wherein the conducting layer is implemented of at least one semiconductor material 14 The electron source according to any of the claims 10-13, wherein at least one barrier is formed by junction of materials with different kinds of conductivity, such as n, n ~ , p, p~ kinds

Claims: 11 15. The electron source according to any of the claims 10-14, wherein at least one barrier is formed by insulating layer that is across to direction of charge carriers flow. 16. The electron source according to any of the claims 10-15, wherein the field emitter is formed by a tip. 17. The electron source according to any of the claims 10-16, wherein the field emitter consists of two coaxial parts, a broad lower part and a more narrow upper part. 18. The electron source according to any of the claims 10-15, wherein the field emitter is formed by a blade. 19. The electron source according to any of the claims 10-18, wherein the top of the field emitter is sharpened and coated by diamond or diamond-like material. 20. The electron source according to the claim 19, wherein the diamond or diamond-like coating is sharpened. 21. The electron source according to any of the claims 10-20, wherein the source of the charge carriers is connected to field emitter via substrate and/or a conducting layer placed on a surface of the field emitter directly or via an insulator layer. . An electron source that includes a field emitter, a substrate, a source of charge carriers, at least one ballast resistor, wherein the substrate has a shape of a tip and is formed by insulator and by a conductive layer; the ballast resistor is implemented by the layer. 23. The electron source according to the claim 22, wherein the conductive layer contains at least one barrier for charge carriers. 24. The electron source according to any of the claims 22, 23, wherein at least one barrier is formed by junction of materials with different kinds of conductivity, such as n, n + , p, p" kinds. 25. The electron source according to any of the claims 22-24, wherein at least one barrier is formed by insulating layer that is across to direction of charge carriers flow. ZO. A controlled electron source that includes a field emitter, a substrate, a source of charge carriers, at least one ballast resistor and at least one control electrode, wherein it contains an electron source implemented according to claims 1-25. 27. The controlled electron source according to the claim 26, wherein it contains at least one active area in the body and/or on the surface of the field emitter. 28. The controlled electron source according to any of the claims 26, 27, wherein it contains at least one active area in a conducting layer placed on the surface of the substrate and or of the field emitter directly or via an insulator layer. 29. The controlled electron source according to any of the claims 26-28, wherein at least one control electrode is placed close to one of the barrier for charge carriers. 30. The controlled electron source according to any of the claims 26-29, wherein at least one control electrode placed on side surface of the field emitter via an insulator layer. 31. The controlled electron source according to any of the claims 26-30, wherein it contains at least one control electrode that is separated from the field emitter by a vacuum gap. 12 32 The controlled electron source according to any of the claims 26-31, wherein at least one control electrode placed along the field emitter 33 The controlled electron source according to any of the claims 26-32, wherein control electrode has a direct contact with the side surface of the field emitter 34 The controlled electron source accordmg to any of the claims 26-33, wherein the electron source according to any of the claims 1-21 a substrate is crystalline 35 The controlled electron source according to anv of the claims 26-34, wherein the electron source according to any of the claims 1-21 a substrate is implemented by an insulator and a conductive layer placed on the insulator 36 The controlled electron source according to any of the claims 34, 35, wherein the substrate or the conductive layer of the substrate is implemented of the monocrystalline material with orientation (H I) 37 The controlled electron source accordmg to any of the claims 26-36, wherein its surface is coated by a material which is transparent for electrons, and which prevents outlet of chemical elements from the surface of controlled electron source 38 The controlled electron source according to the claim 37, wherein the material is diamond or diamond-like carbon j" A matrix system of the controlled electron sources containing at least two controlled electron sources, wherem at least one of the sources implemented accordmg to any of the claims 26-38 40 The matrix system according to the claim 39, wherein it contains a two-dimensional system of mutually perpendicular rows of the controlled electron sources 41 The matrix system according to any of the claims 39, 40, wherein at least one control electrode in the controlled electron sources has a diaphragm shape and is implemented of conductive diamond or diamond-like material 42 The matrix system accordmg to any of the claims 39-41, wherein the substrate represents rows of conductive material placed on insulator 43 The matrix system accordmg to any of the claims 39-42, wherein the controlled electron sources are provided by conductive buses which form two systems buses of each of the systems are mutually parallel, the buses of the two different systems are mutually perpendicular, the two systems being placed in two levels and separated by insulator 44 A method for preparation of controlled electron sources including a formation on a solid substrate of field emitters each of that contains at least one transverse junction formed by materials having different electrical conductivity, a formation of at least one controlled electrode close to such junctions, wherein the field emitters are implemented of whiskers epitaxially grown by the vapor-liquid-so d mechanism 13 45. The method according to the claim 44, wherein the implementation of the field emitters includes formation of the hollows in the substrate; deposition of solvent particles at the bottom of the hollows. 46. The method according to the claim 44, wherein the implementation of the field emitters includes placing of solvent particles on the substrate; etching of the substrate around the particles. 47. The method according to any of the claims 45, 46, wherein further procedure for formation of the field emitters includes placing of a source material, having a first kind of conductivity, opposite to the substrate with the solvent particles on it; growing of whiskers having the first kind of conductivity; stabilized cooling of the grown whiskers, having the globules on its tops, with an introduction of an inert gas into atmosphere, with simultaneous decreasing of the temperature of the substrate; changing of the source material for another source having a second kind of conductivity; stabilized heating of the grown whiskers, having the globules on its tops, with an introduction of an inert gas into atmosphere, with simultaneous increasing of the temperature of the substrate; growing of whiskers having the second kind of conductivity; 48. The method according to the claim 47, wherein the change of the source materials is implemented more than two times. 49. The method according to any of the claims 45, 46, wherein further procedure for formation of the field emitters includes growing of whiskers in a gaseous atmosphere containing the element or elements of which d e substrate consists; introduction of doping gaseous compounds into the gas atmosphere. 50. The method according to the claim 49, wherein the formation of the field emitters includes more than one procedure of introduction into the gas atmosphere of different gaseous doping compounds. 1/9 COLLECTOR i ANODE /GO f V////////Λ FIELD 1 FETS Λ A FETS CTO.R (G GAATTEE /50? HO SOURCE 140 ^ FETS I DRAIN v I30^Λ 120 Fig. 2a Fig. 2b

Inventors: ERSHOV VLADIMIR ILIICH, GIVARGIZOV EVEGENY INVIEVICH, GIVARGIZOV MICHAEL EVGENIEVICH, MANSHINA NINA IVANOVNA, ERSHOV, VLADIMIR ILIICH, GIVARGIZOV, EVEGENY INVIEVICH, GIVARGIZOV, MICHAEL EVGENIEVICH, MANSHINA, NINA IVANOVNA
Applicants: ERSHOV VLADIMIR ILIICH, GIVARGIZOV EVEGENY INVIEVICH, GIVARGIZOV MICHAEL EVGENIEVICH, MANSHINA NINA IVANOVNA, ERSHOV, VLADIMIR ILIICH, GIVARGIZOV, EVEGENY INVIEVICH, GIVARGIZOV, MICHAEL EVGENIEVICH, MANSHINA, NINA IVANOVNA
Application year: 1999
Main classification: H01J1
IPC codes: H01J1, H01J9