Ceramic substrate composition and ceramic circuit component

Abstract: A ceramic substrate composition includes 26 to 48 % by weight of a CaO - Al2O3 - B2O3 - SiO2 type glass, 35 to 68 % by weight of at least one kind of ceramic selected from the group consisting of alumina, mullite, cordierite, and forsterite, 3 to 24 % by weight of quart, said glass being capable of being crystallized to wollastonite by firing of the composition at a temperature of 800 to 1000°C. A ceramic circuit component contains a circuit formed on the ceramic substrate obtained by firing the composition.

Description: The present invention relates to a ceramic substrate composition which can be fired at a temperature of up to 1000°C and a ceramic circuit component produced by use of the same such as a multilayer integrated circuit, a thick-film hybrid circuit, or the like. The conventional, main stream ceramic substrates for use in ceramic circuit components have been alumina substrates. However, the alumina substrates are required to be fired at a high temperature, namely, at about 1600°C. That is, to obtain a multilayer substrate, it is needed to use, as an internal conductor, a metal having a high melting point such as W, Mo, or the like. However, since these metals with a high melting point have a relatively high electric resistance, the alumina substrates are unsuitable for use as the multilayer substrates of electronic components which are more required to be applied at high frequencies and speeds. Accordingly, with a greater attention, development has been made on ceramic substrates can be fired together with metals such as Au, Ag, Ag - Pd, Ag - Pt, Cu, and the like. However, with the conventional ceramic substrates capable of being fired at a low temperature, it has been much difficult to satisfy the requirements for a low dielectric constant, a low loss, and a high strength at the same time. Further, there is the problem that when an Ag type electrode is fired together with the substrates capable of being fired at a low temperature, Ag is diffused into the substrates during the firing. U.S. 4,642,148 discloses a ceramic substrate composition comprising 5 to 75 % by weight of Al 2 O 3 , 20 to 60 % by weight of a borosilicate glass and 5 to 70 % by weight of quartz glass. This composition may be fired at low temperatures but diffusion of Ag into the substrate during the firing process is not inhibited. Accordingly, it is an object of the present invention to provide a ceramic substrate composition which satisfies requirements for a low dielectric constant, a low loss, and a high strength, and can be fired together with an Ag type electrode while the Ag is prevented from being diffused into the ceramic substrate, and to provide a ceramic circuit component produced by use of the ceramic substrate composition. According to the present invention, there is provided a ceramic substrate composition which contains 26 to 48 % by weight of a CaO - Al 2 O 3 - B 2 O 3 - SiO 2 type glass, 35 to 68 % by weight of at least one kind of ceramic selected from the group consisting of alumina, mullite, cordierite, and forsterite, 3 to 24 % by weight of quartz, and up to 5 % by weight of at least one kind of metal oxide selected from the group consisting of TiO 2 , ZrO 2 , CrO 2 and CuO, said glass being capable of being partially crystallized to wollastonite by firing the composition at a temperature of 800 to 1000°C. Preferably, the ceramic substrate composition contains up to 5 % by weight of at least one kind of alkali metal oxide selected from the group consisting of Li 2 O, K 2 O, and Na 2 O. Further, according to the present invention, there is provided a ceramic circuit component which contains a conductor circuit formed on a ceramic substrate produced by molding and firing the above ceramic substrate composition. The conductor circuit may contain at least one member selected from the group consisting of Ag, Au, and Cu as a major component. BRIEF DESCRIPTION OF THE DRAWING Fig. 1 is a cross-sectional view showing an example of the ceramic multilayer substrate according to the present invention. DESCRIPTION OF THE PREFERRED EMBODIMENT The ceramic substrate composition of the present invention contains a CaO - Al 2 O 3 - B 2 O 3 - SiO 2 type glass, at least one kind of ceramic selected from the group consisting of alumina, mullite, cordierite, and forsterite, quartz, and at least one kind of metal oxide selected from the group consisting of TiO 2 , ZrO 2 , CrO 2 and CuO in particular amounts. The glass, by firing at 800 to 1000°C, is partially crystallized to wollastonite. This glass, when it is fired, is softened and viscous-flows, so that it acts as a sintering agent useful in sintering the ceramic substrate composition at a temperature of up to 1000°C, and moreover, is crystallized during and after the sintering, whereby the reduction of the loss of the ceramic substrate and the enhancement of its strength are promoted. In addition, the viscosity of the glass is increased with the crystallization. This prevents Ag from diffusing into the ceramic substrate. The diffusion has been a problem caused when the ceramic substrate is fired together with the Ag type electrode. The content of the glass in the ceramic substrate composition of the present invention is preferably 26 to 48 % by weight. In the content range of less than 26 % by weight, the low temperature sintering, which is carried out at a temperature of up to 1000°C, is impossible. In the content range exceeding 48 % by weight, the amount of the glass remaining uncrystallized in the ceramic substrate is very high, so that the high strength and the low loss of the ceramic substrate can not be achieved. In order to realize such a high strength as can not be attained only by the crystallization of the glass, it is indispensable that the content of the ceramic is at least 35 % by weight. For the purpose of achieving the low temperature sintering of the ceramic substrate and its low dielectric constant, it is necessary that the content is not more than 68 % by weight. Preferably, the content of quartz is in the range of 3 to 24 % by weight. In the content range of less than 3 % by weight, the dielectric constant of the ceramic substrate is excessively high. If the content exceeds 24 % by weight, a sufficiently high strength can not be rendered to the ceramic substrate. The melting temperature of the glass can be reduced by adding at least one kind of alkali metal oxide selected from the group consisting of Li 2 O, K 2 O, and Na 2 O in the glass. The content is preferably up to 5 % by weight. If the content exceeds 5 % by weight, the dielectric constant of the ceramic substrate is enhanced, and simultaneously, the loss is increased. In addition, by adding at least one kind of oxide selected from the group consisting of TiO 2 , ZrO 2 , CrO 2 , and CuO in the glass, the crystallization of the glass can be promoted. Preferably, the content is up to 5 % by weight. If the content exceeds 5 % by weight, the dielectric constant of the ceramic substrate is undesirably enhanced. The ceramic circuit component of the present invention contains a conductor circuit or the like formed on the ceramic substrate obtained by molding and firing the above-described ceramic substrate composition. Since the ceramic substrate composition can be sintered at a temperature of up to 1000°C, a conductor made of Ag, Au, Ag - Pd, Ag - Pt, Cu, or the like can be formed by sintering simultaneously with the ceramic. EXAMPLE As a starting material, alumina, mullite, cordierite, forsterite, and quartz each in the powdery state were prepared. The glass powder was prepared as follows. That is, to obtain the glass compositions shown in Table 1, CaO, Al 2 O 3 , B 2 O 3 , SiO 2 , Li 2 O, K 2 O, Na 2 O, TiO 2 , ZrO 2 , CrO 2 , and CuO were weighed, respectively, mixed sufficiently, and melted at a temperature of 1400 to 1700°C. Then, the glass melting liquid material was quenched, and then, crushed by means of a ball mill to produce the glass powder. Thereafter, the produced glass powder, alumina, mullite, cordierite, and forsterite each in the powder state as a filler, and a quart powder were so mixed as to obtain the composition ratios shown in Table. 1. Then, to the mixed raw material, predetermined amounts of a binder, a plasticizer, and a solvent were added, and kneaded to form a slurry. Then, the slurry was formed into a ceramic green sheet by doctor blade method. Subsequently, a predetermined number of the ceramic green sheets were laminated, cut into a predetermined size, and then, fired at the temperatures shown in Table 2. The sheets were polished to obtain porcelains of 36 mm long '4 mm wide '3 mm thick. The flexural strength (three point bending) of the obtained porcelains was measured in compliance with JIS Standard (JIS R1601). Further, the crystal phase in the ceramic substrate was identified by the X-ray diffraction analysis. The results are shown in Table 2. In addition, by use of the obtained ceramic green sheet, a ceramic multilayer substrate as the ceramic circuit component was produced. More particularly, each ceramic green sheet was perforated by means of a punch. An Ag - Pd paste was filled into the perforation to form a via hole. Thereafter, the Ag - Pd paste was screen-printed to form a conductive paste layer in a predetermined pattern. Then, a predetermined number of the ceramic green sheets were laminated and pressed, and fired in the air at the temperatures shown in Table 2, whereby the ceramic multilayer substrate 1 shown in FIG. 1 was obtained. FIG. 1 is a cross sectional view of the obtained ceramic multilayer substrate 1. The substrate 1 contains a capacitor portion A and an inductor portion B. Further, the substrate 1 contains a ceramic layer 2, and a conductive layer 3 lying inside of the ceramic, conductive layers 4 and 5 on the surface of the ceramic, and a via hole 6. A voltage with a frequency of 1 MHz was applied between the conductor layers 4 and 5 of the ceramic multilayer substrate 1 produced as described above, and the capacitance and the Q factor of the capacitor A were measured. The dielectric constants (εr) were calculated. The results are shown in Table 2. Sample No. Sintering temperature (°C) Crystal phase (Remark 1) Flexural (MPa) Dielectric constant eε at 1MHz Q at 1MHz 1 940 A,W,S 330 7.8 3500 2 860 A,W,S 280 6.5 2500 3 900 A,W,S 310 7.0 4000 4 880 A,W,S 310 6.9 3000 5 920 A,W,S 260 6.0 2100 6 860 A,W,S,M 270 6.7 2300 7 900 A,W,S,C 290 6.8 2300 8 880 A,W,S,F 280 6.5 2700 9 860 A,W,S,M 250 6.3 2100 10 900 A,W,S,F 240 6.2 2200 11 880 A,W,S 300 7.6 3800 12 880 A,W,S 290 7.7 3300 13 920 A,W,S 290 7.9 2100 14 880 A,W,S 300 6.8 3000 15 900 A,W,S 290 7.4 3000 16 850 A,W,S 300 7.5 3300 17 900 A,W,S 310 7.1 3500 18 880 A,W,S 310 7.0 3300 19 880 A,W,S 310 7.0 3300 20 880 A,W,S 315 7.2 3500 21 1000 (fired) unsintered 22 800 A,W,S 190 7.6 2000 23 950 A,W,S 200 5.6 1800 24 850 A,W,C 290 8.3 2600 (Remark 1) A: Alumina W: Wollastonite S: Quartz M: Mullite C: Cordierite F: Forsterite As seen in Tables 1 and 2, Samples Nos. 1 through 20, from which numbers 17 through 20 are embodiments of the present invention, the flexural strengths are high, namely, 240 - 330 MPa, the dielectric constants are low, that is, 6.0 - 7.9, and the Q factors are high, namely, 2100 - 4000. Thus, the samples exhibit excellent characteristics as the ceramic substrate for the ceramic circuit component. The samples can be sintered at a low temperature of up to 940°C, and the wollastonite crystal phases were confirmed by the X-ray diffraction analysis. As regards Samples Nos. 14 through 16, which contain Li 2 O, K 2 O or Na 2 O in the glass, the melting temperature of the glass was reduced. Thus, the reduction of the sintering temperatures was confirmed, as understood in comparison with Sample No. 13, for example. As regards Samples No. 17 through 20, which are embodiments of the present invention, which contain TiO 2 , ZrO 2 , CrO 2 , or CuO in the glass, it was confirmed by the X-ray diffraction analysis that the crystallization was promoted in comparison with Sample No. 4, though it is not shown in Table 2. Further, the obtained ceramic multilayer substrate was so cut as to expose a section thereof perpendicular to the conductor layer for confirmation. It was confirmed that the diffusion of Ag in the ceramic was inhibited in comparison with the conventional cases. On the other hand, Sample No. 21, which is out of the scope of the present invention, was not sintered at a temperature of up to 1000°C since the addition amount of the glass was low. As regards Sample No. 22, the flexural strength was reduced, namely, it was 190 MPa, since the addition amount of the glass was too high. Sample No. 23, since the addition amount of quartz was too high, exhibited a low flexural strength, namely, 200 MPa, and a low Q factor, that is, 1800. For Sample No. 24, to which no quart was added, the dielectric constant of up to 8 could not be achieved. As seen in the above description, by firing at a low temperature, that is, at a temperature of up to 1000°C, the ceramic substrate composition of the present invention, the ceramic substrate having the characteristics of a high strength, a low dielectric constant, and a high Q factor (low loss) can be obtained. Further, since the sintering at a temperature of up to 1000°C is possible, a conductor with a low electric resistance such as a conductor of an Ag type, a Cu type, or the like can be fired together with the ceramic. In addition, when the composition is fired together with Ag type electrodes, the diffusion of Ag into the ceramic substrate can be inhibited. Accordingly, by use of the ceramic substrate, the ceramic circuit component with excellent high frequency characteristics and a high speed performance can be obtained.

Claims: A ceramic substrate composition comprising 26 to 48 % by weight of a CaO - Al 2 O 3 - B 2 O 3 - SiO 2 type glass, 35 to 68 % by weight of at least one kind of ceramic selected from the group consisting of alumina, mullite, cordierite, and forsterite, 3 to 24 % by weight of quartz, and up to 5 % by weight of at least on kind of metal oxide selected from the group consisting of TiO 2 , ZrO 2 , CrO 2 and CuO, said glass being capable of being partially crystallized to wollastonite by firing of the composition at a temperature of 800 to 1000°C. A ceramic substrate composition according to claim 1, further comprising up to 5 % by weight of at least one kind of alkali metal oxide selected from the group consisting of Li 2 O, K 2 O, and Na 2 O. A ceramic circuit component containing a conductor circuit formed on the ceramic substrate obtained by molding and firing the ceramic substrate composition according to any one of claims 1 or 2. A ceramic circuit component according to claim 3, wherein said conductor circuit contains at least one member selected from the group consisting of Ag, Au, and Cu as a major component.

Inventors: KISHIDA KAZUO, NISHIDE MITSUYOSHI, SUNAHARA HIROFUMI, TAKAGI HIROSHI, KISHIDA, KAZUO, NISHIDE, MITSUYOSHI, SUNAHARA, HIROFUMI, TAKAGI, HIROSHI, Kishida, Kazuo, c/o (A170) Intellectual Prop.Dep., Nishide, Mitsuyoshi, c/o (A170) Intellectual P.D., Sunahara, Hirofumi, c/o (A170) Intellectual P.D., Takagi, Hiroshi, c/o (A170) Intellectual P.D.
Applicants: MURATA MANUFACTURING CO, MURATA MANUFACTURING CO., LTD.
Application year: 1999
Main classification: C04B35
IPC codes: H05K3, C03C14, C04B35, H05K1