Non-volatile memory device with row redundancy

Abstract: Non-volatile memory device organised with memory cells that are arranged by row and by column, comprising at least a sector of matrix cells (100), row decoders (D) and column decoders suitable to decode address signals and to activate respectively said rows or said columns, at least a sector of redundancy cells (110) such that it is possible to substitute a row of said sector of matrix cells with a row of said sector of redundancy cells. Said non-volatile memory device comprises a local column decoder (L) for said matrix sector (100) and a local column decoder (L) for said redundancy sector (110). The local column decoders (L) are controlled by external signals so that said row of said redundancy sector (110) is activated simultaneously with said row of said matrix sector (100).

Description: The present invention refers to a non-volatile memory device. In particular the aforementioned invention refers to a non-volatile memory device with row redundancy. In a non-volatile semiconductor memory device (EPROM or Flash) it is necessary that the matrix of memory cells contained therein has all the cells perfectly working during the various operation stages of the device (reading, programming, cancelling). In fact, the presence of only one non working cell (bit-fail) is sufficient for the entire memory device to become useless. Such failure of the memory cell is ascribable, for example, to causes deriving from the technological process, as the existence of conductive layers short-circuiting with each other, the variation of some process parameters, the failure of the dielectric layers. It is therefore necessary to avail of adequate expedients within the memory device that allow to detect and to correct bit-fails, and therefore to increase the production yield of the memory devices. To this purpose, circuit solutions for the correction and the recognition of bit-fail are utilised. A traditionally utilised technique consists in the use of memory cells in addition to the ones constituting the memory matrix that are purposed to substitute the damaged memory cells. Such memory cells, named redundancy cells, are opportunely controlled by circuits additional to the ones that are already present within the device. In particular, in view of the organisation of the memory it is necessary to use entire rows or entire columns made up of redundancy memory cells that substitute corresponding rows or columns of the matrix even in the presence of a single bit-fail located in them. In this way it is necessary to make a compromise between the failure correcting capacity and the area required for the redundancy handling circuits. The choice of the type of organisation of the redundancy cells to be utilised in the memory device (row redundancy, column redundancy, or both) is essentially tied to the knowledge of the distribution and of the typology of the defects present in the matrix for a fixed integration technology process. Figure 1 shows the simplified architecture of a flash type non-volatile memory utilising the row redundancy technique. The architecture consists of a cells matrix 1 orderly organised into rows and columns, of row decoder blocks 2 purposed to decode the row addresses, of column decoder blocks 3 purposed to decode the column addresses, of a reading block containing the reading circuits (sense amplifiers) 4 and of an output buffer 5. For exemplifying but not limiting purpose an architecture with a single redundancy sector 7 for the correction of bit-fails equally probably distributed in all the matrix sectors has been assumed. In a flash memory the cells matrix is divided into different units or sectors having prefixed capacity. The selective access to the sectors is obtained by providing an organisation of the sectors by rows or by columns, as well as a physical separation of the source lines of each sector. In the first case the columns are shared among all sectors and the selection of the sector is made by using the row address, while in the second case the rows are shared among the sectors and the selection is made on the column address. In addition, it is possible to realise a hierarchic row (column) organisation that consists in the realisation of global rows (columns), that means that they are shared among all sectors, to which the local lines (columns) of the single sectors are connected which are enabled only for the sector being selected. The individuation of the defective cells takes place during the testing stage of the device. In the presence of defective cells, an onchip control circuitry allows the substitution of the entire matrix row with a redundant row, in such a way that the access to the latter is completely transparent for the final user. This operation consists in the permanent memorisation of the address of the defective row by means of non-volatile memory cells named UPROM (Unerasable Programmable ROM) 10. The UPROM cells referring to a redundant row are organised in a register suitable to permanently contain the address that was set during the testing stage. In this way, at each access to the memory, the row address being selected must be compared with the content of the redundancy registers. Each register memorises a row address and allows the selection of the corresponding redundant row before carrying out a reading, programming or cancelling operation. In order to ensure the maximum corrective power for a prefixed number of rows per sector, that is the maximum number of retrievable bit-fails in a sector by substitution of the corresponding row, it should be necessary to fix a number of redundancy rows equal to the number of rows in the sector (one to one correspondence). In practice, this choice turns out to be disadvantageous because of the area required by the redundancy management circuits, therefore the number of redundancy rows is fixed at a value lower than the one of the sector rows since a compromise is made between a the corrective power and the area occupied on silicon. In this way a redundant row can substitute only a prefixed row within the set of a prefixed number of sector rows (therefore with a many-to-one correspondence between the rows in a sector and the redundancy row). This choice allows in any case the correction of a bit-fail equally distributed on all sectors of the matrix. With the architecture of the known art, the redundancy rows are predecoded by the same row decoding signals of the matrix sectors. The row decoding takes up a sufficient number of bits of the row address for the generation of Nm signals of row selection (P0, P1.....PNm-1). In the architecture of the row decoding with the known art, the aforementioned decoding signals enable an equal number of selection transistors (typically channel n MOS transistors) for the connection of the row to the predecoding logic located downstream. In an analogous way the redundancy rows are selected by means Nr signals PRO, PR1...PRNr-1. Two cases can occur, that are reported in Figures 2 and 3, where a hierarchic row decoding has been assumed. If Nm>Nr each redundancy row of the sector 210 is shared by groups 10 with Nm/Nr rows of the matrix sectors 200 and the selection signal of the redundancy row is activated only if at least one row of the line 10 is activated, therefore, for example, PR0=P0 or P1 or P2... or P(Nm/Nr - 1) (Figure 2). If Nm=Nr a single row of the matrix sector 200 is associated with each redundancy row of the sector 210, as they are both decoded by the same signal, therefore, for example, PR0=P0 (Figure 3). Such solution allows the maximum corrective power. In a Flash memory architecture utilising the row redundancy technique, according to the solution of the known art, the redundancy cells and the matrix ones share the same bit-lines. Said redundancy cells can be realised in a dedicated sector or distributed inside each matrix sector. In addition the redundancy cells share the source line that must be in turn electrically shared with the one of the matrix rows with which they will be associated. This condition is essential since the architecture of a Flash memory imposes that the redundancy cells must be cancelled simultaneously with the ones of the sector they are referred to. The access time of a memory word in an architecture utilising the row redundancy technique turns out to be greater than the one obtainable with memory architectures that do not use this technique. This access time depends, for example, on the delays of propagation of the signals along the interconnection lines caused by the non-ideal effects due to their physical realisation, on the time required to carry out the comparison between row addresses and the subsequent selection of the redundant row. Figure 4 shows the time diagram of an access to a word in memory evaluated with reference to the commutation of the external address in the case of architecture without row redundancy. The access time comprises the acquisition of the address signal (buffer in), the decoding of the row and column addresses (decoding), the precharging of the selected word line (word line precharging) and column line (bit line precharging) and the subsequent reading (sensing) of the cell content. The datum is transmitted in output by means of a buffer out. In the case of row redundancy, shown in Figure 5, the access time becomes greater since a pre-established time passes (UPROM evaluation), that is necessary to the internal circuitry for the determination of the redundancy conditions for the selected row, before being able to apply the word line precharging. The solution of the known art provides for the precharging of a single row (the selected one if the latter is not redundated, or the redundancy one in the opposite case) for each address change that is imposed from the outside. This reading technique is a consequence of the condition of column share that prevents the simultaneous selection of two cells along the same bit-line. For this reason, with the architectures of memories of the known art, it is necessary to wait for the redundancy event before recharging the row, with a consequent penalisation in access time. In view of the state of the art described, object of the present invention is to realise a non-volatile memory device with row redundancy technique, in which the access time to a memory word is noticeably reduced with respect the one of the present non-volatile memories. According to the present invention, such object is attained by means of a non-volatile memory device AS DEFINED IN CLAIM 1. Owing to the present invention it is possible to realise a non-volatile memory device that utilises a row redundancy technique in which the access time to a memory word is considerably reduced as compared with the one of the current non-volatile memories. The characteristics and the advantages of the present invention will become evident from the following detailed description of an embodiment thereof, that is illustrated as a non limiting example in the enclosed drawings, in which: Figure 1 is a schematic view of a non-volatile memory device of the traditional Flash type; Figure 2 shows a schematic view of a row by a traditional type redundancy method; Figure 3 shows a schematic view of a row by a redundancy method according to the present invention; Figure 4 shows the access time diagram to a memory word in the case in which there is no row redundancy; Figure 5 shows the access time diagram to a memory word in the case in which there is the row redundancy, according to the known art; Figure 6 shows the access time diagram to a memory word in the case in which there is the row redundancy, according to the present invention; Figure 7 shows a detail of a memory architecture according to an embodiment of the present invention; Figure 8 shows a time diagram of the word-line tension in the case of redundated matrix, according to the invention; Figure 9 shows a time diagram of the word-line tension in the case of not redundated matrix, according to the invention. With reference to the attached figures and particularly to Figure 7, a detail of a Flash memory architecture utilising the row redundancy method according to an embodiment of the present invention is shown. In Figure 7 there are shown a matrix sector 100 and a prefixed number of redundancy rows that are realised in a dedicated sector 110. The memory architecture utilises a local column decoder for both matrix sectors and the redundancy sector 110. The memory architecture employs a hierarchic row and column organisation, therefore Figure 7 reports two global rows WL0, WL1 connected to an appropriate decoder D which decodes the row addresses and two global columns MBL0, MBL1. Four local columns LBL0-LBL3 are connected with each one of the global columns MBL0, MBL1. The local columns are decoded by means of a proper local column decoder L that is conditioned by the signal MATRIXSECT, REDSECT corresponding to the sector being selected. Such a local column decoder L decodes signals YO0-YO3 coming from a suitable global column decoder which is not visible in the Figure. Such sector selection signals are obtained from the external signal by means of a decoding logic that is not visible in figure. The row decoding signals are shared by both the matrix sector 100 and the redundancy sector 110. In this organisation, each sector row can be replaced only by the redundancy row to which the same predecoding signals correspond. The number of decoding signals of the matrix sector rows is generally higher than the number of decoding signals of the redundancy rows, that is Nm>Nr, or in order to maximise the corrective power for a prefixed number of redundancy rows, the number of decoding signals of the matrix sector rows may be fixed equal to the one of the selection signals of the redundancy rows, that is Nm=Nr. The source lines of the redundancy cells are connected to each other and electrically to a power generator by means of a selector circuit that is not visible in figure. In Figure 6 the time diagram relative to the access to a word, according to the invention, is shown. Differently from the traditional techniques in a stage following the decoding of the row and column addresses there is simultaneously a precharging of both the addressed memory row (word line precharging) and the corresponding redundancy row (UPROM evaluation). This is possible because the matrix 100 and redundancy 110 sectors do not share the same bit line. The corresponding redundancy row represents the row that is associated with a matrix row and that substitutes the latter in the case that the matrix line is defective. The selection of the matrix cell or of the corresponding redundancy cell is made by selecting the column only at the end of the time required by the redundancy logic. In such way the precharging is made simultaneously with the comparison between the address and content of the UPROM registers so that the row is already precharged at the value required to carry out the reading operation at the end of the comparison. Subsequently, in order to limit the disturbing effects the deselection of the row that is not utilised is set. In fact there is provided the discharge of the selected matrix row (or of the redundancy one) in case the latter is effectively redundated or not in order to limit the interference effects among nearby cells. In Figures 8 and 9 the time diagram of the word-line and bit line voltages relative to the cases of redundated matrix row (Figure 8), and not redundated matrix row (Figure 9).

Claims: Non-volatile memory device organised with memory cells arranged by rows and by columns, comprising at least one sector of matrix cells (100), row decoders (D) and column decoders suitable to decode address signals and to activate respectively said rows or said columns, at least one sector of redundancy cells (110) such that it is possible to substitute a row of said sector of matrix cells with a row of said sector of redundancy cells, at least one memory sector (10) which contains the address signals of defective rows and correlates said address signals of the defective rows with the row of said sector of redundancy cells (110), characterised by comprising a first local column decoder (L) for said sector of matrix (100) and a second local column decoder (L) for said sector of redundancy (110), said first and second local column decoders (L) being controlled by external signals so that said row of said redundancy sector (110) is activated simultaneously with said row of said matrix sector (100), one of the two activated rows being selected according to result of the comparison between the address signals and the entries of said at least one memory sector (10) which contains the address signals of defective rows. Non-volatile memory device according to claim 1, characterised in that it comprises global rows (W10, WL1) and global columns (MBL0, MBL1), said global columns (MBL0, MBL1) being connected with local columns (LBL0-LBL3) that are decoded by said first and second local column decoders (L). Non-volatile memory device according to claim 2, characterised in that each of said first and second column decoder (L) decodes signals (YO0-YO3) coming from a global column decoder. Non-volatile memory device according to claim 3, characterised in that the number of decoding signals of said rows of said matrix cell sector (100) is fixed equal to the number of decoding signals of said rows of said cell redundancy sector (110), in order to maximise the corrective power of said non-volatile memory device. Non-volatile memory device according to claim 3, characterised in that the number of decoding signals of said rows of said matrix sector (100) is higher than the number of decoding signals of said rows of said redundancy sector (110). Non-volatile memory device according to claim 4 or 5, characterised in that said row of said matrix sector (100) and said row of said redundancy sector (110) have an identical decoding signal. Non-volatile memory device according to claim 6, characterised in that said first column decoder (L) and said second column decoder (L) are conditioned by signals (MATRIXSECT; REDSECT) coming from an external circuitry.

Inventors: CAMPARDO GIOVANNI, MANSTRETTA ALESSANDRO, MICHELONI RINO, CAMPARDO, GIOVANNI, MANSTRETTA, ALESSANDRO, MICHELONI, RINO
Applicants: ST MICROELECTRONICS SRL, STMICROELECTRONICS S.R.L.
Application year: 1999
Main classification: G06F11
IPC codes: G11C29, G06F12, G11C16