METHOD FOR DETERMINING IDDQ

Abstract: A CMOS integrated circuit is tested by the following steps: supplying the integrated circuit in static conditions, biasing the p-type body regions (9) with a potential (VBBN) more negative than the negative pole (VSS) of the supply and the n-type body regions (12) with a potential (VBBP) more positive than the positive pole (VDD) of the supply, setting a current threshold value (Ith), measuring the current (IDDQ) absorbed, comparing the current (IDDQ) measured with the threshold current (Ith), accepting or rejecting the integrated circuit if the comparison shows that the current (IDDQ) measured is less than or is greater than the threshold value (Ith), respectively.

Description: The present invention relates to a method of testing an integrated circuit as defined in the preamble of Claim 1 and known from US 5 625 300. Upon completion of the process to manufacture a plurality of identical integrated circuits on a wafer of semiconductor material, even before the individual devices are separated from one another, they are subjected to final testing on the wafer (final wafer test) by suitable automatic apparatus. The test comprises various programmed electrical measurements which are intended to ascertain whether each device conforms to certain functional requirements defined at the design stage. Devices which do not satisfy all of these requirements are identified after testing so that they can be rejected after the wafer has been divided up into chips, whilst the devices which have passed the test go on to subsequent assembly and encapsulation stages. A parameter which is the subject of one of the most significant electrical measurements in the testing of digital or mixed analog and digital integrated circuits of large dimensions produced with the use of CMOS technology is the current at rest, in static conditions, that is, the current absorbed by the integrated circuit when it is connected to the supply but is functionally inactive and in a waiting condition (stand-by mode) or when the supply is deactivated (power-down mode). This parameter is commonly indicated IDDQ, where I indicates the current, DD indicates direct-current supply, and Q indicates the "quiescent" or rest state. The IDDQ current measured is given basically by the sum of the so-called sub-threshold currents of the MOS transistors, including those which constitute the memory cells, and of the leakage currents due to manufacturing defects or material defects. Further leakage currents of the semiconductor junctions (junction leakage currents) are at least two orders of magnitude lower and are thus negligible. If the sample subjected to testing is defective in the sense which will be explained further below, the current measured also includes a contribution resulting directly from the defect. For each integrated circuit subjected to testing, the IDDQ current measured is compared with a threshold value Ith, which is set beforehand by examining test samples of the same device and by taking into consideration suitable tolerance margins. If the comparison shows that the IDDQ value is equal to or greater than the value Ith, the device tested is identified for subsequent rejection. The method of measuring the IDDQ current is recognized as being very important in programs for testing CMOS integrated circuits but becomes ever more difficult to perform as the complexity of the integrated circuits increases, that is, with increases in the density of integration and in the number of logic gates, which generally indicates the degree of complexity of a digital integrated circuit. To explain this fact further, it should be borne in mind that, with the refinement of integration techniques, there has been a change, within a short time, from IDDQ currents of between 1 µA and 10 µA for integrated circuits containing 1,000-10,000 logic gates produced by 1.5-1.0 µm technology to IDDQ currents of between 100 and 10,000 µA for integrated circuits containing 100,000 - 10 million logic gates produced by 0.5-0.2 µm technology. It is known that the contribution of subthreshold currents to the IDDQ current increases in proportion to the number of transistors. On the other hand, the threshold current Ith must be set in a manner such that a defective device can be identified. That is, it must be equal to the sum of the IDDQ current measured for a good device and of a current smaller than the current If due to the presence even of a single electrical defect such as a short-circuit or a floating node in the integrated circuit. Since this current If is substantially independent of the complexity of the integrated circuit, the difference between the IDDQ current measured for a good device and the current Ith is smaller, as a percentage, the greater is the number of transistors in the integrated circuit. By way of example, if the IDDQ current for a device without electrical defects is 10 µA and if the current If due to a defect is at least 50 µA, the threshold current Ith may be fixed at 60 µA, that is, six times the IDDQ of a good device. If, however, the IDDQ of a good device is 1 mA, in order not to risk accepting as good those devices which have even a single defect contributing 50 µA to the IDDQ measurement, the threshold voltage Ith must be fixed at 1.05 mA, that is, at a value which differs from the IDDQ of a good device by only a fraction thereof (1/20 in this example). In conclusion, in the first case, the difference between IDDQ and Ith is 50 µA, which is 500% of the IDDQ current to be compared and, in the second case, the difference is still 50 µA, but this is only 5% of the IDDQ current to be compared. To ensure reliable results of the measurement even for devices with a high density of integration it is therefore necessary to use ever more sensitive and hence more complex detection circuits and ever more critical measurement methods. To prevent this problem, it has been proposed to perform the IDDQ measurements by keeping the wafer containing the integrated circuits to be tested at a temperature much lower than ambient temperature, for example -40°C. In these conditions, the sub-threshold currents are reduced whilst the leakage currents due to defects of the structure increase (because of the increased mobility of the charge-carriers at low temperatures). Although this technique is effective, it is not applicable in practice in the mass production of integrated circuits because it requires extremely expensive apparatus designed to operate at low temperature. The object of the present invention is to find a method of measuring the IDDQ current during the testing of integrated circuits with a high density of components which requires neither particularly sensitive detector circuits nor expensive apparatus. This object is achieved by the implementation of the method defined and characterized in general in the first claim. The invention will be understood further from the following detailed description of an embodiment thereof, given by way of non-limiting example with reference to the single appended drawing in which the single figure shows schematically a portion of an integrated circuit with connections and biasing illustrating the measurement method according to the invention. In a MOS or CMOS integrated circuit, the regions in which the source and drain regions of one or more transistors of the same type are formed, and which are known as body regions, may be constituted by the substrate of the integrated circuit or by regions formed suitably in the substrate. It is known that the source regions of the transistors contained in a body region are normally electrically connected to the respective body region by means of a common surface contact strip. That is, there is a single conductive track which electrically interconnects the source regions and the respective body regions of the n-channel MOS transistors. This track terminates in a terminal contact pad of the integrated circuit which is intended to be connected to the negative terminal (VSS) of a supply of the integrated circuit. Similarly, a single conductive track electrically interconnects the source regions and the respective body regions of the P-channel MOS transistors and terminates in a pad which is intended to be connected to the positive terminal (VDD) of the supply. In order to implement the test method according to the invention, it is necessary to form the integrated circuit with a modified structure of the source and body connections; more precisely, separate connection tracks have to be formed for the source regions and for the body regions of both types of transistors, and each of the tracks has to terminate in a separate terminal contact pad. An integrated circuit structure formed in this manner is described, for example, in publication EP-A-0782187. Before the wafer is divided into chips, the integrated circuits formed therein are subjected to electrical testing, individually, by means of suitable automatic apparatus. In order to perform the test according to the invention, the apparatus has two additional needles for establishing the necessary contacts for the connection of the measurement apparatus to the terminal body pads, indicated NW and PW in the drawing. The drawing shows, schematically and in section, a portion of an integrated circuit containing a pair of CMOS transistors. The integrated circuit is formed on a p-type epitaxial layer 9 with a low concentration of dopants (P-), grown on a strongly doped (P+) p-type substrate 11. An n-type region 12 formed in the layer 9 contains two strongly-doped p-type regions which constitute the source region (S) and the drain region (D) of a p-channel MOS transistor. A conductive strip, insulated from the layer 9, is disposed over the channel between the source and drain regions, and constitutes the gate electrode (G) of the transistor. The region 12 constitutes the body region of the p-channel transistor and may contain other MOS transistors of the same type. Two strongly-doped (N+) n-type regions are also formed in the layer 9 and constitute the source region (S) and the drain region (D) of an n-channel MOS transistor. A conductive strip, insulated from the layer 9 and constituting the gate electrode (G) of the transistor, is disposed over the channel between these two regions also. The layer 9 constitutes the body region of the n-channel transistor and may contain other MOS transistors of the same type. Separate conductive strips, indicated 23 and 21, are in contact with the surfaces of the source regions of the p-channel transistors contained in the body regions 12 and in other similar body regions (not shown), and with the surfaces of the source regions of the n-channel transistors formed in the body region 9, and terminate in respective pads SP, SN of the integrated circuit. Two separate conductive strips, indicated 24 and 22, are in contact with the surface of the body region 12 and of any other body regions containing p-channel transistors, and with the surface of the body region (layer 9) of the n-channel transistors, and terminate in the respective pads NW, PW. For electrical testing, the integrated circuit is connected to the measurement apparatus by means of needles in contact with the pads. The IDDQ measurement program provides, according to the invention, for the supply of the integrated circuit in static conditions and for the application of a negative voltage between the common connection terminal of the body regions of the n-channel transistors and the negative terminal VSS (ground) of the supply, and the application of a positive voltage between the common connection terminal of the body regions of the p-channel transistors and the positive supply terminal VDD. This is represented in the drawing by the connection of a voltage source VBBN between the pad PW and the ground terminal and by the connection of a voltage source VBBP between the pad NW and the positive terminal VDD of the voltage supply. The polarities of the voltages VBBN and VBBP are such that the body potentials of both n-channel and p-channel transistors increase in absolute value. This has the effect of significantly reducing the sub-threshold currents but does not appreciably affect the leakage currents due to manufacturing defects or to material defects. The IDDQ current measured is compared with a predetermined threshold current Ith. The threshold current is preferably determined experimentally by measuring the IDDQ current of a certain number of integrated circuits which are of the same type as those to be tested and which are supplied and biased in the same manner, by performing a statistical analysis of the results of the measurements, and by taking into consideration a suitable tolerance margin. It could, however, be determined in a different manner, for example, by computer simulation programmes or by calculation. The integrated circuit evaluated is then accepted or is rejected if the comparison shows that the current measured is less than or is greater than the threshold value, respectively. In a practical example in which the voltage VDD was 5V and the voltages VBBP and VBBN were 1V in absolute value, the IDDQ current was found to be about three orders of magnitude smaller than the IDDQ current measured in accordance with the known method, whereas the current due to the presence of an electrical defect remained substantially unchanged. As a result, the threshold current was also set at a value which was lower by the same order of magnitude so that the current difference to be measured was much larger as a percentage. In summary, therefore, with the method according to the invention, the testing of devices which, according to the prior art, would have an IDDQ of between 100 and 10,000 µA can be performed with the same ease and reliability as the testing of devices having an IDDQ, measured according to the prior art, of between 0.1 and 10 µA.

Claims: A method of testing an integrated circuit having n-channel MOS transistors in p-type body regions and p-channel MOS transistors in n-type body regions, comprising the following steps; setting a current threshold value (Ith), supplying the integrated circuit in static conditions with a voltage supply having a positive pole (VDD) and a negative pole (VSS), said positive pole (VDD) and said negative pole (VSS) being connected to a first terminal (SP) connected to the source regions of the p-channel MOS transistors and to a second terminal (SN) connected to the source regions of the n-channel MOS transistors, respectively, measuring the current (IDDQ) absorbed by the integrated circuit, comparing the current (IDDQ) measured with the threshold value (Ith), accepting or rejecting the integrated circuit if the comparison shows that the current (IDDQ) measured is less than or is greater than the threshold value (Ith), respectively, characterized in that , before the current (IDDQ) absorbed by the integrated circuit is measured, a biasing operation is performed and consists of applying to a third, terminal (PW) connected to the p-type body regions (9) a potential (VBBN) which is negative relative to the negative pole (VSS) of the voltage supply and to a fourth terminal (NW) connected to the n-type body regions (12) a potential (VBBP) which is positive relative to the positive pole (VDD) of the voltage supply. A test method according to Claim 1, in which the step of setting a current threshold value (Ith) comprises: measurement of the currents absorbed by a plurality of integrated circuits of the same type as those to be tested, supplied in static conditions and subjected to the above-mentioned biasing operation, and statistical analysis of the results of the measurement.

Inventors: DALLAVALLE CARLO, DALLAVALLE, CARLO
Applicants: ST MICROELECTRONICS SRL, STMICROELECTRONICS S.R.L.
Application year: 1999
Main classification: G01R31
IPC codes: G01R31, H01L21