Dielectric ceramic composition and monolithic ceramic capacitor using same

Abstract: The present invention provides a dielectric ceramic composition containing 100 parts by weight of essential component represented by (BaO) m TiO 2 + M 2 O 3 + R 2 O 3 + BaZrO 3 + MgO + MnO (wherein M 2 O 3 represents Sc 2 O 3 and/or at least one of Eu 2 O 3 , Gd 2 O 3 , Tb 2 O 3 and Dy 2 O 3 ) and 0.2 to 3.0 parts by weight of the side components represented by Li 2 O-(Si, Ti)O 2 -MO (wherein MO represents Al 2 O 3 and or ZrO 2 ) or SiO 2 -TiO 2 -XO (wherein XO represents at least one of BaO, CaO, SrO, MgO, ZnO and MnO),and a ceramic capacitor using the same.

Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a dielectric ceramic composition and monolithic ceramic capacitor using the same. 2. Description of the Related Art The conventional ceramic capacitor is usually produced by the following process. First, a sheet of a dielectric material coated with an electrode material to serve as inner electrodes on its surface is prepared. A material essentially composed of BaTiO 3 is used for the dielectric material. Then, the sheet of the dielectric material coated with this electrode material is laminated with heat-pressing to a monolithic body followed by firing at 1250 to 1350 °C in an atmospheric environment to obtain a ceramic monolithic body having inner electrodes. A monolithic ceramic capacitor is obtained by glazing outer electrodes electrically connected to inner electrodes. Noble metals such as platinum, gold, palladium or silver have been conventionally used for the material of the inner electrode of this monolithic ceramic capacitor. However, these electrode materials are expensive while having excellent characteristics, rendering the production cost to be increased. Therefore, a monolithic capacitor using base metals such as Ni in the inner electrode is currently proposed to reduce the production cost, its application in the market being steadily increasing. SUMMARY OF THE INVENTION In the trend to make electronic appliances compact, high performance and low price, the monolithic capacitor is strongly required to be low price, to be improved in insulation durability, insulating property and reliability, and to have a large capacitance. Although it is advantageous for reducing the price of the electronic appliances to use an inexpensive monolithic ceramic capacitor in which nickel is used for the inner electrode, a problem that the insulation resistance, insulation durability and reliability are extremely deteriorated when the electronic appliances are used under a high electric field strength because conventional dielectric ceramic materials are designed on the premise that they are used under a low electric field strength. In other words, there has been no monolithic ceramic capacitor being able to use under a high electric field strength along with using nickel for the inner electrode. For example, while the dielectric materials disclosed in Japanese Examined Patent Publication No. 57-42588 and Japanese Unexamined Patent Publication No. 61-101459 can display a large dielectric constant, the grain size of the dielectric ceramic is large, thereby exhibiting deficiencies such that the insulation durability of the monolithic ceramic capacitor becomes low when it is used under a high electric field strength or the mean life span under the high temperature load test becomes short. In the dielectric material disclosed in Japanese Examined Patent Publication No. 61-14611, there was a deficiency that the dielectric constant, or the electrostatic capacitance, is extremely lowered when the capacitor is used under a high electric field strength, although its dielectric constant obtained under a low electric field strength is as high as 2000 to 2800. It was also a deficiency that the insulation resistance is low. It is desirable to provide a dielectric ceramic composition capable of forming, for example, dielectric ceramic layers of a monolithic ceramic capacitor, wherein the insulation resistance represented by a product with the electrostatic capacitance (a product CR) is as high as 4900 to 5000 Ω·F or more and 200 Ω·F or more at room temperature and 150 °C, respectively, when the capacitor is used under a high electric field strength of, for example, as high as about 10 kV/mm, along with having a small voltage dependence of the insulation resistance, being excellent in stability of the electrostatic capacitance against DC vias voltage, being high in the insulation durability besides the temperature characteristics of the electrostatic capacitance satisfying both of B-level characteristic standard stipulated in the JIS Standard and X7R-level characteristic standard stipulated in the EIA standard and being excellent in weather resistance performance shown by a high temperature load test and high humidity load test. Moreover it is desirable to provide a monolithic ceramic capacitor whose inner electrode is constructed of Ni or Ni alloys along with using such dielectric ceramic composition as a dielectric ceramic layer. EP 0 737 655 A1 discloses a dielectric ceramic obtainable from a composition comprising barium titanate containing 0.02% by weight or less of alkali metal oxides, barium zirconate and manganese oxide, furthermore, an essential component containing (BaO) m TiO 2 , γBaZrO 3 and MnO, and finally as a side component, an oxide gas represented by Li 2 O - (Si, Ti)O 2 - MO (wherein MO is at least one of Al 2 O 3 and ZrO 2 ). Additional dielectric ceramic is however, not yet completely satisfying with respect to its temperature characteristic which should satisfy the B-level characteristic and X7R characteristic, and with respect to the specific dielectric constant which should be kept above 1000. It is therefore an objective of the present invention, to provide an improved dielectric ceramic having an improved temperature characteristic satisfying the B-level characteristic/ X7R characteristic and an improved specific dielectric constant. According to the present invention, this objective is achieved by a dielectric ceramic according to claim 1. The dielectric ceramic according to the present invention differs from the dielectric ceramic disclosed in EP 0 737 655 A1 at least one of either scandium oxide or ytrium oxide is present, in that an essential component contains αM 2 O 3 , (wherein M 2 O 3 represents at least one of either Sc 2 O 3 or Y 2 O 3 , wherein α representing the mole ratio is in the range of 0.001 ≤ α ≤ 0.06). The presence of either scandiumoxide Sc 2 O 3 or ytriumoxide Y 2 O 3 within the afore mentioned range of 0.001 ≤ α ≤ 0.06 helps in achieving the desired B-level characteristic / X7R characteristic and the desired specific dielectric constance. Prefered embodiments are laid down in the dependent claims. The essential component may further contain g mole ratio of magnesium oxide, where 0.001 < γ ≤ 0.12, 0.001 < g ≤ 0.12 and γ + g ≤ 0.13 In the dielectric ceramic composition described above, it is preferable that the first side component, when its composition is represented by xLi 2 O-y(Si w Ti 1-w )O 2 -zMO (wherein x, y and z represent mol% and w is in the range of 0.30 ≤ w ≤ 1.00), falls within or on the boundary lines of the area surrounded by straight lines connecting each point indicated by A (x = 20, y = 80, z = 0), B (x = 10, y = 80, z = 10), C (x = 10, y = 70, z = 20), D (x = 35, y = 45, z = 20), E (x = 45, y = 45, z = 10) and F (x = 45, y = 55, z = 0) (when the composition falls on the straight line of A - F, w is within the area of 0.3 ≤ w < 1.0) in the three component diagram defined by the apexes corresponding to each component. In the dielectric ceramic composition described above, it is preferable that the second side component, when its composition is represented by xSiO2-yTiO 2 -zXO (wherein x, y and z represent mol%), falls within or on the boundary lines of the area surrounded by straight lines connecting each point indicated by A (x = 85, y = 1, z = 14), B (x = 35, y = 51, z = 14), C (x = 30, y = 20, z = 50) and D (x = 39, y = 1, z = 60) in the three component diagram defined by the apexes corresponding to each component. The second side component contains in total of 15 parts by weight of at least one of Al 2 O 3 and ZrO 2 (the content of ZrO 2 is 5 parts by weight or less) relative to 100 parts by weight of the oxide represented by SiO 2 -TiO 2 -XO. The present invention according to a different aspect provides a monolithic ceramic capacitor provided with a plurality of dielectric ceramic layers, inner electrodes formed between the ceramic layers and outer electrodes being electrically connected to the inner electrodes, wherein the dielectric ceramic layers are constructed by the dielectric ceramic composition described above and the inner electrodes are composed of nickel or a nickel alloy. The outer electrode may be provided with a sintered layer of an electroconductive metal powder or an electroconductive metal powder supplemented with glass frits. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a cross sectional view showing the monolithic ceramic capacitor according to one embodiment of the present invention. FIG. 2 is a plane view showing the dielectric ceramic layer portion having inner electrodes of the monolithic ceramic capacitor shown in FIG. 1. FIG. 3 is a disassembled perspective view showing the ceramic monolithic portion of the monolithic ceramic capacitor shown in FIG. 1. FIG. 4 is a three component phase diagram of Li 2 O-(Si w , Ti 1-w )O 2 -MO oxides. FIG. 5 is a three component phase diagram of SiO 2 -TiO 2 -XO oxides. DESCRIPTION OF THE PREFERRED EMBODIMENT The basic construction of the monolithic ceramic capacitor according to the first embodiment of the present invention will be described hereinafter referring to the drawings. FIG. 1 is a cross section showing one example of the monolithic ceramic capacitor, FIG. 2 is a plane view showing the dielectric ceramic portion having inner electrodes of the monolithic ceramic capacitor in FIG. 1, and FIG. 3 is a disassembled perspective view showing the dielectric ceramic portion having inner electrodes of the monolithic ceramic capacitor in FIG. 1. As shown in FIG. 1, the monolithic ceramic capacitor 1 according to the present embodiment is provided with a rectangular shaped monolithic ceramic body 3 obtained by laminating a plurality of dielectric ceramic layers 2a and 2b via the inner electrodes 4 . An outer electrode 5 is formed on the both side faces of the monolithic ceramic body 3 so that the outer electrodes are electrically connected to each of the specified inner electrodes 4 , on which a first plating layer 6 comprising nickel or copper is plated, a second plating layer 7 comprising a solder or tin being further formed on the first plating layer. The method for producing the monolithic ceramic capacitor 1 will be next described in the order of production steps. At first, a raw material powder of barium titanate prepared by weighing and mixing in a given composition ratio is prepared as an essential component of the dielectric ceramic layers 2a and 2b . Then, a slurry is prepared by adding an organic binder in this raw material powder and, after forming this slurry into a sheet, a green sheet for use in the dielectric ceramic layers 2a and 2b is obtained. Next, an inner electrode 4 comprising nickel or a nickel alloy is formed on one principal face of the green sheet to serve as the dielectric ceramic layers 2b . Nickel or nickel alloys as base metals may be used for the material of the inner electrode 4 when the dielectric ceramic layers 2a and 2b are formed using the dielectric ceramic composition as described above. The inner electrode 4 may be formed by a screen printing method, a deposition method or a plating method. After laminating a required number of the green sheets for use in the dielectric ceramic layers 2b having the inner electrodes 4, the green sheets are inserted between the green sheets for use in the dielectric ceramic layer 2a having no inner electrode, thus obtaining a raw monolithic body by press-adhering these green sheets. Then, this raw monolithic body is fired at a given temperature to obtain a ceramic monolithic body 3 . The outer electrodes 5 are formed at the both side faces of the ceramic monolithic body 3 so as to be electrically connected to the inner electrodes 4 . The same material as used in the inner electrodes 4 can be used for the outer electrodes 5 . While silver, palladium, a silver-palladium alloy, copper and a copper alloy is available besides a composition prepared by adding a glass frit such as a B 2 O 3 -SiO 2 -BaO glass or Li 2 O-SiO 2 -BaO glass into these metal powders, an appropriate material should be selected by taking the application object and application site of the monolithic capacitor into consideration. While the outer electrodes 5 is formed by coating the ceramic monolithic body 3 obtained by firing with a metal powder paste as a raw material followed by heat-adhering, it may be formed by heat-adhering the metal powder paste simultaneously with the ceramic monolithic body 3 . The first plating layer 6 is then formed by applying a plating with nickel or copper on the outer electrode 5 . Finally, the second plating layer 7 comprising a solder or tin is formed on the first plating layer 6 , thereby completing the monolithic capacitor 1 . Such process for further forming a conductive layer on the outer electrode 5 may be omitted depending on the application field of the monolithic ceramic capacitor. By using the dielectric ceramic composition as described previously for constructing the dielectric ceramic layers 2a and 2b , the characteristic of the dielectric ceramic layers is not deteriorated even when it is fired in a reducing atmosphere. In other words, such characteristics are obtained in which the product between the insulation resistance and the electrostatic capacitance (a product CR) is as high as 4900 to 5000 Ω·F or more and 200 Ω·F or more at room temperature and 150 °C, respectively, when the capacitor is used under an electric field strength as high as about 10 kV/mm, along with having a small voltage dependence of the insulation resistance, the absolute value of the capacitance decreasing ratio at an impressed DC voltage of 5 kV/mm being as small as 40% to 45%, the insulation durability being as high as 12 kV/mm or more under an AC voltage and 14 kV/mm under a DC voltage, besides its temperature characteristics of the electrostatic capacitance satisfying the B-level characteristic standard stipulated in the JIS Standard in the temperature range of -25 °C to +85 °C and X7R-level characteristic standard stipulated in the EIA standard in the temperature range of -55 °C to +125 °C and being excellent in weather resistance performance shown by a high temperature load test at 150 °C and at DC 25 kV/mm and high humidity load test. It has been confirmed that, among alkali earth metal oxides such as SrO and CaO existing in barium titanate as impurities, alkali metal oxides such as Na 2 O and K 2 O and other oxides such as Al 2 O 3 and SiO 2 , especially the content of the alkali metal oxides largely influences on the electric characteristics. While the specific dielectric constant is decreased when the amounts of addition of rare earth element oxides such as Eu 2 O 3 , Gd 2 O 3 , Tb 2 O 3 , Dy 2 O 3 , Ho 2 O 3 , Er 2 O 3 , Tm 2 O 3 and Yb 2 O 3 , and Sc 2 O 3 and Y 2 O 3 are increased, the specific dielectric constant can be kept to a practically acceptable range of 900 to 1600 by keeping the content of the alkali metal oxides contained in barium titanate as impurities to 0.02% by weight or less. Adding an oxide represented by Li 2 O-(Si, Ti)O 2 -MO (wherein MO is at least one of Al 2 O 3 and ZrO 2 ) in the dielectric ceramic composition allows the composition to be sintered at a relatively low temperature of 1300 °C or less, further improving the high temperature load characteristic. Adding an oxide represented by Si 2 O-TiO 2 -XO (wherein XO is at least one kind of compound selected from BaO, CaO, SrO, MgO, ZnO and MnO) in the dielectric ceramic composition allows the composition to be improved in sintering property as well as in high temperature load characteristic and humidity resistance load characteristic. A higher insulation resistance can be obtained by adding Al 2 O 3 and/or ZrO 2 in the oxide represented by Si 2 O-TiO 2 -XO. (Examples) The present invention will now be described in more detail by way of examples. However, the embodiment within the scope of the present invention is not limited to these examples. (Example 1) After preparing and weighing TiCl 4 and Ba(NO 3 ) 2 having a variety of purity as starting materials, the compounds were precipitated as titanyl barium oxalate (BaTiO(C 2 O 4 )·4H 2 O) by adding oxalic acid. This precipitate was decomposed by heating at a temperature of 1000 °C or more to synthesize four kinds of barium titanate listed in TABLE 1. Oxides, carbonates or hydroxides as each component of the first side component were weighed so as to be a composition ratio (mole ratio) of 0.25Li 2 O-0.65(0.30TiO 2 ·0.70SiO 2 )-0.10Al 2 O 3 to obtain a powder by crushing and mixing. Likewise, oxides, carbonates or hydroxides as each component of the second side component were weighed so as to be a composition ratio (mole ratio) of 0.66SiO 2 -0.17TiO 2 -0.15BaO-0.02MnO to obtain a powder by crushing and mixing. Oxide powders of the first and second side components were placed in separate platinum crucibles, respectively, and heated at 1500 °C. After quenching and crushing the mixture, each oxide powder with a mean particle size of 1 µm or less was obtained. In the next step, BaCO 3 for adjusting the mole ratio Ba/Ti (m) in barium titanate, Sc 2 O 3 , Y 2 O 3 , Eu 2 O 3 , Gd 2 O 3 , Tb 2 O 3 and Dy 2 O 3 , and BaZrO 3 , MgO and MnO, each having a purity of 99% or more, were prepared. These raw material powders and the oxides described above to be either one of the side components were weighted so as to form compositions shown in TABLE 2 and TABLE 3. The amounts of addition of the first and second side components are indicated by parts by weight relative to 100 parts by weight of the essential component (BaO) m TiO 2 + αM 2 O 3 + βR 2 O 3 + γBaZrO 3 + gMgO + hMnO. Organic solvents such as polyvinyl butyral binder and ethanol were added to the weighed compounds and the mixture was mixed in a ball mill in an wet state to prepare a ceramic slurry. This ceramic slurry was formed into a sheet by a doctor blade method to obtain a rectangular shaped green sheet with a thickness of 35 µm, followed by printing an electroconductive paste mainly composed of Ni on the ceramic green sheet to form an electroconductive paste layer for forming inner electrodes. Then, a plurality of the ceramic green sheets on which the electroconductive layer is formed were laminated so that the sides where the electroconductive paste is projected out are alternately placed with each other, thus obtaining a monolithic body. This monolithic body was heated at 350 °C in a N 2 atmosphere and, after allowing the binder to decompose, the monolithic body was fired at the temperatures shown in TABLE 4 and TABLE 5 in a reducing atmosphere comprising H 2 -N 2 -H 2 O gases under an oxygen partial pressure of 10 -9 to 10 -12 MPa, thereby obtaining a ceramic sintered body. The both side faces of the ceramic sintered body were coated with a silver paste containing B 2 O 3 -Li 2 O-SiO 2 -BaO glass frits and fired at a temperature of 600 °C in a N 2 atmosphere, thereby obtaining outer electrodes electrically connected to the inner electrodes. The overall dimensions of the monolithic ceramic capacitor thus obtained were 5.0 mm in width, 5.7 mm in length and 2.4 mm in thickness while the thickness of the dielectric ceramic layer was 30 µm. Total number of the effective dielectric ceramic layers were 57, the area of the confronting electrode per one layer being 8.2 × 10 -6 m 2 . Electric characteristics of these monolithic ceramic capacitors were measured. The electrostatic capacitance (C) and dielectric loss (tan δ) were measured using an automatic bridge type measuring instrument at 1 kHz, 1 Vrms and 25 °C and the dielectric constant (ε) was calculated from the electrostatic capacitance. Next, the insulation resistance was measured using an insulation resistance tester at 25 °C and 150 °C by impressing direct current voltages of 315 V (or 10 kV/mm) and 945 V (or 30 kV/mm) for 2 minutes, obtaining a product of the electrostatic capacitance and insulation resistance, or a product CR. The rate of change of the electrostatic capacitance against temperature changes was also measured. The rate of change at -25 °C and 85 °C by taking the electrostatic capacitance at 20 °C as a standard (ΔC/C20), the rate of change at -55 °C and 125 °C by taking the electrostatic capacitance at 25 °C as a standard (ΔC/C25) and the maximum value of the rate of change (|ΔC| max) as an absolute value were measured as the electrostatic capacitances against temperature changes. The DC vias characteristic was also evaluated. First, the electrostatic capacitance when an AC voltage of 1 kHz and 1 Vrms was impressed was measured. Then, the electrostatic capacitance when a DC voltage of 150 V and an AC voltage of 1 kHz and 1 Vrms were simultaneously impressed was measured, thereby the rate of reduction of the electrostatic capacitance (ΔC/C) due to loading the DC voltage was calculated. In the high temperature load test, a direct current voltage of 750 V (or 25 kV/mm) was impressed at 150 °C on 36 pieces of each sample to measure the time dependent changes of the insulation resistance. The time when the insulation resistance of each sample was reduced below 10 6 Ω was defined to be a life span time and mean life span time was evaluated. In the humidity resistance test, the number of the test pieces having an insulation resistance of 10 6 Ω or less among the 72 test pieces were counted after impressing a DC voltage of 315 V under an atmospheric pressure of 2 atm (relative humidity 100%) at 120 °C for 250 hours. Insulation breakdown voltages under AC and DC voltages were measured by impressing AC and DC voltages at a voltage increase rate of 100 V/sec. The results described above are listed in TABLE 4 and TABLE 5. It is evident from Table 1 to TABLE 5 that the monolithic ceramic capacitor according to the present invention has a capacitance decreasing ratio of as small as within -45% at an impressed voltage of 5 kV/mm and a dielectric loss of less than 1.0 %, wherein the rate of change of the electrostatic capacitance against temperature changes satisfies both the B-level characteristic standard stipulated in the JIS Standard in the temperature range of -25 °C to +85 °C and X7R-level characteristic standard stipulated in the EIA standard in the temperature range of -55 °C to +125 °C. Moreover, the insulation resistances at 25 °C and 150 °C as expressed by the product CR show as high values as 5000 Ω·F or more and 200 Ω·F or more, respectively, when the ceramic capacitor is used under a high electric field strength of 10 kV/mm. The insulation breakdown voltage also shows high values of 12 kV/mm or more under the AC voltage and 14 kV/mm or more under the DC voltage. In addition, an acceleration test at 150 °C and DC 25 kV/mm gave a mean life span as long as 800 hours or more besides enabling a relatively low firing temperature of 1300 °C or less. The reason why the composition was limited in the present invention will be described hereinafter. In the composition of (BaO) m TiO 2 + αM 2 O 3 + βR 2 O 3 + γBaZrO 3 + gMgO + hMnO (wherein M 2 O 3 represents at least one of either Sc 2 O 3 or Y 2 O 3 and R 2 O 3 represents at least one of the compound selected from Eu 2 O 3 , Gd 2 O 3 , Tb 2 O 3 and Dy 2 O 3 , α, β, γ, g and h representing mole ratio, respectively), the M 2 O 3 content α of less than 0.001 as shown in the sample No. 1 is not preferable because the temperature characteristic does not satisfy the B-level characteristic / X7R characteristic. On the other hand, the M 2 O 3 content α of more than 0.05 as shown in the sample No. 2 is also not preferable because the specific dielectric constant is reduced to less than 1000. Accordingly, the preferable range of the Mn 2 O 3 content α is 0.001 ≤ α ≤ 0.05. It is not preferable that the R 2 O 3 content β is less than 0.001 as in the sample No. 3 since the insulation resistance is so low that the product CR becomes small. It is also not preferable that the R 2 O 3 content β is more than 0.05 as in the sample No. 4 because the temperature characteristic does not satisfy the B-level characteristic / X7R characteristic, reducing the reliability. Accordingly, the preferable range of the R 2 O 3 content β is 0.001 ≤ β ≤ 0.05. When the combined amount of M 2 O 3 and R 2 O 3 (α + β) is more than 0.06, the dielectric loss is increased up to 2.0% while the mean life span is shortened, being not preferable since the number of rejects in the humidity resistance load test is increased. Accordingly, the combined amount of M 2 O 3 and R 2 O 3 (α + β) is preferably in the range of α + β ≤ 0.06. It is not preferable that, as seen in the sample No. 6, the BaZrO 3 content γ is zero since the insulation resistance becomes low while having a larger voltage dependency of the insulation resistance than in the system containing BaZrO 3 . On the other hand, when the BaZrO 3 content γ exceeds 0.06 as in the sample No. 7, the temperature characteristic does not satisfy the B-level characteristic / X7R characteristic, being not preferable since the mean life span is shortened. Accordingly, the preferable range of the BaZrO 3 content γ is 0.005 ≤ γ ≤ 0.06. It is not preferable that, as seen in the sample No. 8, the MgO content g is 0.001 since the insulation resistance becomes low besides the temperature characteristics noes not satisfy the B-level characteristic / X7R characteristic. On the other hand, when the MGO content g exceeds 0.12 as seen in the sample No. 9, the sintering temperature becomes high and the dielectric loss exceeds 2.0%, which is not preferable because rejections in the humidity resistance test are extremely increased while shortening the mean life span. Accordingly, the preferable range of the MgO content g is 0.001 ≤ g ≤ 0.12. It is not preferable that the MnO content h is 0.001 as seen in the sample No. 10 since the sample becomes not measurable due to semiconductor formation. It is not preferable that the MnO content h exceeds 0.12, on the other hand, because the temperature characteristic X7R is not satisfied along with the insulation resistance becomes low and the mean life span becomes short. Accordingly, the preferable MnO content h is in the range of 0.001 < h ≤ 0.12. It is not preferable that, as seen in the sample No. 12, the combined content of MgO and MnO (g + h) exceeds 0.13 because the dielectric loss is increased to 2.0%, the mean life span is shortened and the number of rejects in the humidity resistance load test is increased. Accordingly, the combined content of MgO and MnO (g + h) is preferably in the range of g + h ≤ 0.13. It is not preferable that the BaO/TiO 2 ratio m is less than 1.000 as in the sample No. 13 because measurements are impossible due to formation of semiconductors. It is also not preferable that, as seen in the sample No. 14, that the BaO/TiO 2 ratio m is 1.000 since the insulation resistance as well as the AC and DC breakdown voltage becomes low along with shortening the mean life span. It is not preferable, on the other hand, that the BaO/TiO 2 ratio m is over 1.035 since measurements becomes impossible due to insufficient sintering. Accordingly, the BaO/TiO 2 ratio m in the range of 1.000 < m ≤ 1.035 is preferable. It is not preferable that the amount of addition of the first or second side component is zero as in the samples No. 17 and 19 because measurements are impossible due to insufficient sintering. When the amount of addition of the first or second side component exceeds 3.0 parts by weight as seen in the samples No. 18 and 20, the dielectric loss exceeds 1.0% and the insulation resistance and insulation breakdown voltage are lowered along with shortening the mean life span, which are not preferable. Accordingly, the preferable content of either the first or the second components is 0.2 to 3.0 parts by weight. The contents of the alkali metal oxides contained in barium titanate as impurities are suppressed below 0.02% by weight because, when the contents of the alkali earth metal oxides exceeds o.02% by weight, the dielectric constant is decreased. (Example 2) A starting material BaO 1.010 ·TiO 2 + 0.010Y 2 O 3 + 0.02Gd 2 O 3 + 0.01BaZrO 3 + 0.05MgO + 0.01MnO (mole ratio) was prepared using barium titanate "A" in TABLE 1 as a dielectric powder, in which Li 2 O-(Si, Ti)O 2 -MO oxide with a mean particle size of 1 µm or less shown in TABLE 6 prepared by heating at 1200 to 1500 °C was added as a first side component. A monolithic ceramic capacitor was prepared by the same method as in Example 1, except that the starting material as described above was used. The overall dimensions of the monolithic ceramic capacitor produced are the same as in Example 1. Sample No. The first side component Amount of addition (parts by weight) Composition (mol %, except w) Li 2 O (Si w Ti 1-w )O 2 w Al 2 O 3 ZrO 2 101 1 20 80 0.3 0 0 102 1 10 80 0.6 5 5 103 0.8 10 70 0.5 20 0 104 0.8 35 45 1 10 10 105 1.5 45 45 0.5 10 0 106 1.5 45 55 0.3 0 0 107 1 20 70 0.6 5 5 108 1 20 70 0.4 10 0 109 1.2 30 60 0.7 5 5 110 1.2 30 60 0.8 10 0 111 2 40 50 0.6 5 5 112 2 40 50 0.9 0 10 113 1.5 10 85 0.4 5 0 114 2 5 75 0.6 10 10 115 1.2 20 55 0.5 25 0 116 1 45 40 0.8 0 15 117 0.8 50 45 0.7 5 0 118 1.2 25 75 0.9 0 0 119 1.5 25 75 1 0 0 120 1 35 65 0.9 0 0 121 1.5 35 65 1 0 0 122 1.2 20 70 0.2 0 10 Then, the electric characteristics were measured by the same method as described in example 1. The results are shown in TABLE 7. As is evident from TABLE 6 and TABLE 7, preferable results are obtained in the samples No. 101 to 112, 118 and 120, in which oxides with compositions within or on the boundary lines of the area surrounded by the straight lines connecting each spot indicated by A (X = 20, y = 80, z = 0), B (X = 10, y = 80, z = 10), C (X = 10, y = 70, z = 20), D (X = 35, y = 45, z = 20), E (X = 45, y = 45, z = 10) and F (X = 45, y = 55, z = 0) in the three component phase diagram of the oxides represented by Li 2 O-(Si w , Ti 1-w )O 2 -MO shown in FIG. 4 are added, wherein the samples have a capacitance decreasing ratio of as small as within -45% at an impressed voltage of 5 kV/mm and a dielectric loss of 1.0% or less, along with the rate of change of the electrostatic capacitance against temperature changes satisfying the B-level characteristic standard stipulated in the JIS Standard in the temperature range of -25 °C to +85 °C and X7R-level characteristic standard stipulated in the EIA standard in the temperature range of -55 °C to +125 °C. The insulation resistance represented by the product CR at 25 °C and 150 °C shows as high values as 5000 Ω·F or more and 200 Ω·F or more, respectively, when the capacitor used under a electric field strength of 10 kV/mm. The insulation breakdown voltages are as high as 12 kV/mm or more under AC voltage and 14 kV/mm or more under a DC voltage. The mean life span is as long as 800 hours or more in the acceleration test at 150 °C and DC 25 kV/mm while enabling a relatively low firing temperature of 1300 °C or less. On the contrary, when the Li 2 O-(Si w , Ti 1-w )O 2 -MO oxides is outside of the composition range described above, the sintering becomes insufficient or many samples are rejected in the humidity resistance load test even after sintering in the samples No. 113 to 117 and 119. The samples with the composition falling on the line A-F and w = 1.0 as in the samples No. 119 and 121, the sintering temperature becomes high along with causing many rejects in the humidity resistance load test. When the value of w is less than 0.30 as shown in the sample No. 122, the sintering temperature becomes high along with causing many rejects in the humidity resistance load test. (Example 3) A starting material BaO 1.010 ·TiO 2 + 0.010Y 2 O 3 + 0.01Eu 2 O 3 + 0.01Gd 2 O 3 + 0.01BaZrO 3 + 0.05MgO + 0.01MnO (mole ratio) was prepared using barium titanate in TABLE 1A as a dielectric powder, in which oxides represented by SiO 2 -TiO 2 -XO with a mean particle size of 1 µm or less shown in TABLE 8 prepared by heating at 1200 to 1500 °C was added as a second side component. A monolithic ceramic capacitor was produced by the same method as in Example 1, except that the starting material as described above was used. The amounts of addition of Al 2 O 3 and ZrO 2 correspond to the amounts of addition relative to 100 parts by weight of the second side component (xSiO 2 -yTiO 2 -zXO). The overall dimensions of the monolithic capacitor produced is the same as in Example 1. Then, the electric characteristics were measured as in Example 1. The results are shown in TABLE 9. As is evident from TABLE 8 and TABLE 9, preferable results are obtained in the samples No. 201 to 212, in which oxides with compositions within or on the boundary lines of the area surrounded by the straight lines connecting each spot indicated by A (X = 85, y = 1, z = 14), B (X = 35, y = 51, z = 14), C (X = 30, y = 20, z = 50) and D (X = 39, y = 1, z = 60), wherein x, y and z represent mole %, in the three component phase diagram of the SiO 2 -TiO 2 -XO oxides shown in FIG. 5 are added, wherein the samples have a capacitance decreasing ratio of as small as within -45% at an impressed voltage of 5 kV/mm and a dielectric loss of 1.0% or less, along with the rate of change of the electrostatic capacitance against temperature changes satisfying the B-level characteristic standard stipulated in the JIS Standard in the temperature range of -25 °C to +85 °C and X7R-level characteristic standard stipulated in the EIA standard in the temperature range of -55 °C to +125 °C. When the capacitor is used under a high electric field strength of 10 kV/mm, the insulation resistance represented by the product CR at 25 °C and 150 °C show a high value of 5000 Ω·F or more and 200 Ω·F or more, respectively. The insulation breakdown voltage also shows high values of 12 kV/mm or more under the AC voltage and 14 kV/mm or more under the DC voltage. The mean life span in the acceleration test at 150 °C and DC 25 kV/mm is as long as 800 hours along with being free from rejects in the humidity resistance load test and being possible to sinter at a relatively low sintering temperature of 1300 °C. In the SiO 2 -TiO 2 -XO oxide, on the other hand, sintering becomes insufficient as in samples No. 213 to 219 or rejects occur in the humidity resistance load test even after sintering. Although a monolithic capacitor having 5400 Ω·F or more and 300 Ω·F or more of the insulation resistances at 25 °C and 150 °C, respectively, under the electric field strength of 10 kV/mm, the sintering property is extremely deteriorated when the amounts of addition of Al 2 O 3 and ZrO 2 exceed 15 parts by weight and 5 parts by weight, respectively. (Example 4) Four kinds of barium titanate (BaTiO 3 ) in TABLE 1, an oxide powder as a first side component and an oxide powder as a second side component were obtained by the same method as in Example 1. Next, BaCO 3 for adjusting the Ba/Ti mole ratio m of barium titanate, and Sc 2 O 3 , Y 2 O 3 , Eu 2 O 3 , Gd 2 O 3 , Tb 2 O 3 and Dy 2 O 3 , and BaZrO 3 and MnO, each having a purity of 99% or more, were prepared. These raw material powders and the foregoing oxide powder as one of the side component of either the first or the second component were weighed to be the compositions shown in TABLE 10 and TABLE 11. The amounts of addition of the first and second side components correspond to the amount of addition relative to 100 parts by weight of the essential component (BaO) m TiO 2 + αM 2 O 3 + βR 2 O 3 + γBaZrO 3 + gMnO). A monolithic ceramic capacitor was produced using this weighed materials by the same method as in Example 1. Overall dimensions of the monolithic ceramic capacitor produced is the same as in Example 1. The electric characteristics were measured by the same method as in Example 1. The results are shown in TABLE 12 and TABLE 13. As is evident from TABLE 10 to TABLE 13, the monolithic capacitor according to the present invention has a capacitance decreasing ratio of as small as within -45% at an impressed voltage of 5 kV/mm and a dielectric loss of 1.0% or less, along with the rate of change of the electrostatic capacitance against temperature changes satisfying the B-level characteristic standard stipulated in the JIS Standard in the temperature range of -25 °C to +85 °C and X7R-level characteristic standard stipulated in the EIA standard in the temperature range of -55 °C to + 125 °C. Moreover, when the capacitor is used under a high electric field strength of 10 kV/mm, the insulation resistance represented by the product CR at 25°C and 150°C shows a high value of 4900 Ω·F or more and 200 Ω·F or more, respectively. The insulation breakdown voltage also shows high values of 12 kV/mm or more under the AC voltage and 14 kV/mm under the DC voltage. The mean life span in the acceleration test at 150°C and DC 25 kV/mm is as long as 800 hours along with being possible to sinter at a relatively low sintering temperature of 1300°C. The reason why the composition was limited in the present invention will be described hereinafter. In the composition of (BaO) m TiO 2 + αM 2 O 3 + βR 2 O 3 + γBaZrO 3 + gMnO (wherein M 2 O 3 represents at least one of either Sc 2 O 3 or Y 2 O 3 and R 2 O 3 represents at least one of the compound selected from Eu 2 O 3 , Gd 2 O 3 , Tb 2 O 3 and Dy 2 O 3 , α, β, γ and g representing mole ratio, respectively), the M 2 O 3 content α of less than 0.001 as shown in the sample No. 301 is not preferable because the temperature characteristic does not satisfy the B-level characteristic / X7R characteristic. On the other hand, the M 2 O 3 content α of more than 0.05 as shown in the sample No. 302 is also not preferable because the specific dielectric constant is reduced to less than 900. Accordingly, the preferable range of the M 2 O 3 content α is 0.001 ≤ α ≤ 0.05. It is not preferable that the R 2 O 3 content β of less than 0.001 as in the sample No. 303 since the insulation resistance is so low that the product CR becomes small. It is also not preferable that the R 2 O 3 content β is more than 0.05 as in the sample No. 304 because the temperature characteristic does not satisfy the B-level characteristic / X7R characteristic, reducing the reliability. Accordingly, the preferable range of the R 2 O 3 content β is 0.001 ≤ β ≤ 0.05. When the combined amount of M 2 O 3 and R 2 O 3 (α + β) is more than 0.06 as in the sample No. 305, the dielectric loss is increased up to 2.0% while the mean life span is shortened, being not preferable since the number of rejects in the humidity resistance load test is increased. Accordingly, the combined amount of M 2 O 3 and R 2 O 3 (α + β) is preferably in the range of α + β ≤ 0.06. It is not preferable that, as seen in the sample No. 306, the BaZrO 3 content γ is zero since the insulation resistance becomes low while having a larger voltage dependency of the insulation resistance than in the system containing BaZrO 3 . On the other hand, when the BaZrO 3 content γ exceeds 0.06 as in the sample No. 307, the temperature characteristic does not satisfy the B-level characteristic / X7R characteristic, being not preferable since the mean life span is shortened. Accordingly, the preferable range of the BaZrO 3 content γ is 0.005 ≤ γ ≤ 0.06. It is not preferable that, as seen in the sample No. 308, the MnO content g is 0.001 since measurements are impossible due to semiconductor formation. On the other hand, it is not preferable that the MnO content g exceeds 0.13 as seen in the sample No. 309 because the temperature characteristic X7R is not satisfied besides the insulating resistance is low and the mean life span becomes short. Accordingly, the preferable range of the MnO content g is 0.001 < g ≤ 0.13. It is not preferable that the BaO/TiO 2 ratio m is less than 1.000 as in the sample No. 310 because measurements are impossible due to formation of semiconductors. It is also not preferable that, as seen in the sample No. 311, the BaO/TiO 2 ratio m is 1.000 since the insulation resistance as well as the AC and DC breakdown voltage becomes low along with shortening the mean life span. It is not preferable, on the other hand, that the BaO/TiO 2 ratio m is over 1.035 as in the samples No. 312 and 313 since measurements becomes impossible due to insufficient sintering. Accordingly, the BaO/TiO 2 ratio m in the range of 1.000 < m ≤ 1.035 is preferable. It is not preferable that the amount of addition of the first or second side component is zero as in the samples No. 314 and 316 because measurements are impossible due to insufficient sintering. It is not preferable that the amount of addition of the first or second side component exceeds 3.0 parts by weight as seen in the samples No. 315 and 317, the dielectric loss exceeds 1.0% and the insulation resistance and insulation breakdown voltage are lowered along with shortening the mean life span. Accordingly, the preferable content of either the first or the second components is 0.2 to 3.0 parts by weight. The contents of the alkali earth metal oxides contained in barium titanate as impurities are suppressed below 0.02% by weight because, when the contents of the alkali earth metal oxides exceeds 0.02% by weight as in the sample No. 318, the dielectric constant is decreased. (Example 5) A starting material of the composition of BaO 1.010 ·TiO 2 + 0.01Y 2 O 3 + 0.02Dy 2 O 3 + 0.01BaZrO 3 + 0.06MnO (mole ration) was prepared using barium titanate in TABLE 1A as a dielectric powder, in which oxides represented by Li 2 O-(Si, Ti)O 2 -MO with a mean particle size of 1 µm or less shown in TABLE 6 prepared by heating at 1200 to 1500 °C was added as a first side component. A monolithic ceramic capacitor was produced by the same method as in Example 1, except that the starting material as described above was used. The overall dimensions of the monolithic capacitor is the same as in Example 1. The electric characteristics were measured by the same method as in Example 1. The results are shown in TABLE 14. The samples No. 401 to 422 in TABLE 14 correspond to the samples No. 101 to 122 in TABLE 6, respectively, wherein, for example, the side component in the sample No. 101 in TABLE 6 is added to the sample No. 401 in TABLE 14. As is evident from TABLE 14, preferable results are obtained in the samples No. 401 to 412, 418 and 420, in which oxides in the samples No. 101 to 112, 118 and 120 in TABLE 6 with compositions within or on the boundary line of the area surrounded by the straight lines connecting each spot indicated by A (X = 20, y = 80, z = 0), B (X = 10, y = 80, z = 10), C (X = 10, y = 70, z = 20), D (X = 35, y = 45, z = 20), E (X = 45, y = 45, z = 10) and F (X = 45, y = 55, z = 0), wherein x, y and z represent mole % and w is mole ratio, in the three component phase diagram of the Li 2 O-(Si w , Ti 1-w )O 2 -MO oxides shown in FIG. 4 are added, wherein the samples have a capacitance decreasing ratio of as small as within -40% at an impressed voltage of 5 kV/mm and a dielectric loss of 1.0% or less, along with the rate of change of the electrostatic capacitance against temperature changes satisfying the B-level characteristic standard stipulated in the JIS Standard in the temperature range of -25 °C to +85 °C and X7R-level characteristic standard stipulated in the EIA standard in the temperature range of -55 °C to +125 °C. When the capacitor is used under a high electric field strength of 10 kV/mm, the insulation resistance represented by the product CR at 25 °C and 150 °C show a high value of 4900 Ω·F or more and 200 Ω·F or more, respectively. The insulation breakdown voltage also shows high values of 12 kV/mm or more under the AC voltage and 14 kV/mm under the DC voltage. The mean life span in the acceleration test at 150 °C and DC 25 kV/mm is as long as 800 hours along with being possible to sinter at a relatively low sintering temperature of 1300 °C. On the contrary, when the oxides represented by Li 2 O-(Si w , Ti 1-w )O 2 -MO is outside of the composition range described above as in the samples No. 113 to 117 and 119 in TABLE 6, the sintering becomes insufficient or many samples are rejected in the humidity resistance load test even after sintering as seen in the samples No. 413 to 417 and 419. The samples with the composition falling on the line A-F and W = 1.0 have high sintering temperature along with causing many rejects in the humidity resistance load test as seen in the samples No. 119 and 121 in TABLE 14. When the value of w is less than 0.30 as shown in the sample No. 122 in TABLE 6, the sintering temperature becomes high along with causing many rejects in the humidity resistance load test as seen in the sample NO. 433 in TABLE 14. (Example 6) A starting material with a composition of BaO 1.010 ·TiO 2 + 0.01Y 2 O 3 + 0.01Eu 2 O 3 + 0.01Tb 2 O 3 + 0.015BaZrO 3 + 0.06MnO (mole ration) was prepared using barium titanate in TABLE 1A as a dielectric powder, in which the oxide represented by SiO 2 -TiO 2 -XO with a mean particle size of 1 µm or less as shown in TABLE 8 prepared by heating at 1200 to 1500 °C was added as a second side component. A monolithic ceramic capacitor was produced by the same method as in Example 1, except that the starting material as described above was used. The overall dimensions of the monolithic capacitor produced is the same as in Example 1. The electric characteristics were measured by the same method as in Example 1. The results are shown in TABLE 15. The samples No. 501 to 519 in TABLE 15 correspond to the samples No. 201 to 219 in TABLE 8, respectively, wherein, for example, the sample No. 501 in TABLE 15 was obtained by adding the side component in the sample No. 201 in TABLE 8. As is evident from the samples No. 501 to 512 in TABLE 15, preferable results are obtained in the samples in which the oxides of the samples No. 201 to 212 in TABLE 8 with compositions within or on the boundary lines of the area surrounded by the straight lines connecting each spot indicated by A (X = 85, y = 1, z = 14), B (X = 35, y = 51, z = 14), C (X = 30, y = 20, z = 50) and D (X = 39, y = 1, z = 60), wherein x, y and z represent mole %, in the three component phase diagram of the oxides represented by SiO 2 -TiO 2 -XO shown in FIG. 5 are added, wherein the samples have a capacitance decreasing ratio of as small as within -40% at an impressed voltage of 5 kV/mm and a dielectric loss of 1.0% or less, along with the rate of change of the electrostatic capacitance against temperature changes satisfying the B-level characteristic standard stipulated in the JIS Standard in the temperature range of -25 °C to +85 °C and X7R-level characteristic standard stipulated in the EIA standard in the temperature range of -55 °C to +125 °C. When the capacitor is used under a high electric field strength of 10 kV/mm, the insulation resistance represented by the product CR at 25 °C and 150 °C show a high value of 4900 Ω·F or more and 200 Ω·F or more, respectively. The insulation breakdown voltage also shows high values of 12 kV/mm or more under the AC voltage and 14 kV/mm under the DC voltage. The mean life span in the acceleration test at 150 °C and DC 25 kV/mm is as long as 800 hours along with being free from rejections in the humidity resistance load test and being possible to sinter at a relatively low sintering temperature of 1300 °C. On the contrary, when the SiO 2 -TiO 2 -XO oxides is outside of the composition range described above as in the samples No. 213 to 219 in TABLE 8, the sintering becomes insufficient or many samples are rejected in the humidity resistance load test even after sintering as seen in the samples No. 513 to 519 in TABLE 15. When Al 2 O 3 and/or ZrO2 is allowed to contain in the oxides represented by SiO 2 -TiO 2 -XO as in the samples No. 211 and 212 in TABLE 8, a monolithic capacitor having the insulation resistances of 5300 Ω·F or more and 300 Ω·F or more at 25 °C and 150 °C, respectively, under an electric field strength of 10 kV/mm as the samples No. 511 and 512 in TABLE 15 can be obtained. However, when the amounts of addition of Al 2 O 3 and ZrO 2 exceed 15 parts by weight and 5 parts by weight, respectively, as in the samples No. 217 and 218 in TABLE 8, the sintering property is extremely deteriorated as in the samples No. 217 and 218 in TABLE 8. (Example 7) After preparing and weighing TiCl 4 and Ba(NO 3 ) 2 having a variety of purity as starting materials, the compounds were precipitated as titanyl barium oxalate (BaTiO(C 2 O 4 )·4H 2 O) by adding oxalic acid. This precipitate was decomposed by heating at a temperature of 1000 °C or more to synthesize four kinds of barium titanate listed in TABLE 1. Oxides, carbonates or hydroxides as each component of the first side component were weighed so as to be a composition ratio (mole ratio) of 0.25Li 2 O-0.65(0.30TiO 2 ·0.70SiO 2 )-0.10Al 2 O 3 to obtain a powder by crushing and mixing. Likewise, oxides, carbonates or hydroxides as each component of the second side component were weighed so as to be a composition ratio (mole ratio) of 0.66SiO 2 -0.17TiO 2 -0.15BaO-0.02MnO to obtain a powder by crushing and mixing. Oxide powders of the first and second side components were placed in separate platinum crucibles, respectively, and heated at 1500 °C. After quenching and crushing the mixture, each oxide powder with a mean particle size of 1 µm or less was obtained. In the next step, BaCO 3 for adjusting the mole ratio Ba/Ti (m) in barium titanate, Sc 2 O 3 , Y 2 O 3 , BaZrO 3 , MgO and MnO, each having a purity of 99% or more, were prepared. These raw material powders and the oxides described above to be either the first or second side component were weighted so as to form the compositions shown in TABLE 1002 and TABLE 1003. The amounts of addition of the first and second side components are indicated by parts by weight relative to 100 parts by weight of the essential component represented by ((BaO) m TiO 2 + αM 2 O 3 + βBaZrO 3 + γMgO + gMnO). Organic solvents such as polyvinyl butyral binder and ethanol were added to the weighed compounds and the mixture was mixed in a ball mill in an wet state to prepare a ceramic slurry. This ceramic slurry was formed into a sheet by a doctor blade method to obtain a rectangular shaped green sheet with a thickness of 35 µm, followed by printing an electroconductive paste mainly composed of Ni on the ceramic green sheet to form an electroconductive paste layer for forming inner electrodes. Then, a plurality of the ceramic green sheets on which the electroconductive layer is formed were laminated so that the sides where the electroconductive paste is projected out are alternately placed with each other, thus obtaining a monolithic body. This monolithic body was heated at 350 °C in a N 2 atmosphere and, after allowing the binder to decompose, the monolithic body was fired at the temperatures shown in TABLE 1004 and TABLE 1005 in a reducing atmosphere comprising H 2 -N 2 -H 2 O gases under an oxygen partial pressure of 10 -9 to 10 -12 MPa for two hours, thereby obtaining a ceramic sintered body. The both side faces of the ceramic sintered body were coated with a silver paste containing B 2 O 3 -Li 2 O-SiO 2 -BaO glass frits and fired at a temperature of 600 °C in a N 2 atmosphere, thereby obtaining outer electrodes electrically connected to the inner electrodes. The overall dimensions of the monolithic ceramic capacitor thus obtained were 5.0 mm in width, 5.7 mm in length and 2.4 mm in thickness while the thickness of the dielectric ceramic layer was 30 µm. Total number of the effective dielectric ceramic layers were 57, the area of the confronting electrode per one layer being 8.2 × 10 -6 m 2 . Electric characteristics of these monolithic ceramic capacitors were measured. The electrostatic capacitance (C) and dielectric loss (tan δ) were measured using an automatic bridge type measuring instrument at 1 kHz, 1 Vrms and 25 °C and the dielectric constant (ε) was calculated from the electrostatic capacitance. Next, the insulation resistance was measured using an insulation resistance tester at 25 °C and 150 °C by impressing direct current voltages of 315 V (or 10 kV/mm) and 945 V (or 30 kV/mm) for 2 minutes, obtaining a product of the electrostatic capacitance and insulation resistance, or a product CR. The rate of change of the electrostatic capacitance against temperature changes was also measured. The rate of change at -25 °C and 85 °C by taking the electrostatic capacitance at 20 °C as a standard (ΔC/C20), the rate of change at -55 °C and 125 °C by taking the electrostatic capacitance at 20 °C as a standard (ΔC/C25) and the maximum value of the rate of change (|ΔC| max) as an absolute value were measured as the electrostatic capacitances against temperature changes. The DC vias characteristic was also evaluated. First, the electrostatic capacitance when an AC voltage of 1 kHz and 1 Vrms was impressed was measured. Then, the electrostatic capacitance when a DC voltage of 150 V and an AC voltage of 1 kHz and 1 Vrms were simultaneously impressed was measured, thereby the rate of reduction of the electrostatic capacitance (ΔC/C) due to loading the DC voltage was calculated. In the high temperature load test, a direct current voltage of 750 V (or 25 kV/mm) was impressed at 150 °C on 36 pieces of each sample to measure the time dependent changes of the insulation resistance. The time when the insulation resistance of each sample was reduced below 10 6 Ω was defined to be a life span time and mean life span time was evaluated. In the humidity resistance test, the number of the test pieces having an insulation resistance of 10 6 Ω or less among the 72 test pieces were counted after impressing a DC voltage of 315 V under an atmospheric pressure of 2 atm (relative humidity 100%) at 120 °C for 250 hours. Insulation breakdown voltages under AC and DC voltages were measured by impressing AC and DC voltages at a voltage increase rate of 100 V/sec. The results described above are listed in TABLE 1004 and TABLE 1005. It is evident from Table 1002 to TABLE 1005 that the monolithic ceramic capacitor according to the present invention has a capacitance decreasing ratio of as small as within -45% at an impressed voltage of 5 kV/mm and a dielectric loss of less than 1.0 %, wherein the rate of change against temperature changes satisfies both the B-level characteristic standard stipulated in the JIS Standard in the temperature range of -25 °C to +85 °C and X7R-level characteristic standard stipulated in the EIA standard in the temperature range of -55 °C to +125 °C. Moreover, the insulation resistances at 25 °C and 150 °C as expressed by the product CR show as high values as 5000 Ω·F or more and 200 Ω·F or more, respectively, when the ceramic capacitor is used under a high electric field strength of 10 kV/mm. The insulation breakdown voltage also shows high values of 12 kV/mm or more under the AC voltage and 14 kV/mm or more under the DC voltage. In addition, an acceleration test at 150 °C and DC 25 kV/mm gave a mean life span as long as 800 hours or more besides enabling a relatively low firing temperature of 1300 °C or less. The reason why the composition was limited in the present invention will be described hereinafter. In the composition of (BaO) m TiO 2 + αM 2 O 3 + βBaZrO 3 + γMgO + gMnO (wherein M 2 O 3 represents at least one of either Sc 2 O 3 or Y 2 O 3 , α, β, γ, and g representing mole ratio, respectively), the M 2 O 3 content α of less than 0.001 as shown in the sample No. 1001 is not preferable because the temperature characteristic does not satisfy the B-level characteristic / X7R characteristic. On the other hand, the M 2 O 3 content α of more than 0.06 as shown in the sample No. 1002 is also not preferable because the specific dielectric constant is reduced to less than 1000. Accordingly, the preferable range of the M 2 O 3 content α is 0.001 ≤ α ≤ 0.06. It is not preferable that the BaZrO 3 content β of zero as in the sample No. 1003 is not preferable since the insulation resistance is low and the voltage dependency of the insulating resistance is larger than that of the composition system containing BaZrO 3 . It is also not preferable that the BaZrO 3 content β is more than 0.06 as in the sample No. 1004 because the temperature characteristic does not satisfy the B-level characteristic / X7R characteristic. It is not preferable that the amount of addition of the first or second side component is zero as in the samples No. 1014 and 1016 because measurements are impossible due to insufficient sintering. It is not preferable that the amount of addition of the first or second side component exceeds 3.0 parts by weight as seen in the samples No. 1015 and 1017, because the dielectric loss exceeds 1.0% and the insulation resistance and insulation breakdown voltage are lowered along with shortening the mean life span. Accordingly, the preferable content of either the first or the second components is 0.2 to 3.0 parts by weight. The contents of the alkali earth metal oxides contained in barium titanate as impurities are suppressed below 0.02% by weight because, when the contents of the alkali earth metal oxides exceeds 0.02% by weight as in the sample No. 1018. the dielectric constant is decreased. (Example 8) A material with a composition of BaO 1.010 ·TiO 2 + 0.03Y 2 O 3 + 0.02BaZrO 3 + 0.05MgO + 0.01 MnO (mole ratio) was prepared using barium titanate in TABLE 1A as a dielectric powder. A monolithic ceramic capacitor was produced by the same method as in Example 1, except that an oxide represented by Li 2 O-(Si, Ti)O 2 -MO shown in Table 1006, having a mean particle size of 1 µm or less produced by heating the material described above at 1200 to 1500 °C, was added as the first side component. The overall dimensions of the monolithic ceramic capacitor produced is the same as in Example 1. Sample No. The first side component Amount of addition (parts by weight) Composition (mol %, except w) Li 2 O (Si w Ti 1-w )O 2 w Al 2 O 3 ZrO 2 1101 1 20 80 0.3 0 0 1102 1 10 80 0.6 5 5 1103 0.8 10 70 0.5 20 0 1104 0.8 35 45 1 10 10 1105 1.5 45 45 0.5 10 0 1106 1.5 45 55 0.3 0 0 1107 1 20 70 0.6 5 5 1108 1 20 70 0.4 10 0 1109 1.2 30 60 0.7 5 5 1110 1.2 30 60 0.8 10 0 1111 2 40 50 0.6 5 5 1112 2 40 50 0.9 0 10 1113 1.5 10 85 0.4 5 0 1114 2 5 75 0.6 10 10 1115 1.2 20 55 0.5 25 0 1116 1 45 40 0.8 0 15 1117 0.8 50 45 0.7 5 0 1118 1.2 25 75 0.9 0 0 1119 1.5 25 75 1 0 0 1120 1 35 65 0.9 0 0 1121 1.5 35 65 1 0 0 1122 1.2 20 70 0.2 0 10 The electric characteristics were then measured by the same method as in Example 1. The results are shown in TABLE 1007. As is evident from TABLE 1006 and TABLE 1007, preferable results are obtained in the samples No. 1101 to 1112, 1118 and 1120, in which oxides with compositions within or on the boundary lines of the area surrounded by the straight lines connecting each spot indicated by A (X = 20, y = 80, z = 0), B (X = 10, y = 80, z = 10), C (X = 10, y = 70, z = 20), D (X = 35, y = 45, z = 20), E (X = 45, y = 45, z = 10) and F (x = 45, y = 55, z = 0), (wherein x, y and z represent mole % and w represents mole ratio, which is in the range of 0.3 ≤ w < 1.0 in the composition on the line A - F) of the three component phase diagram of the oxides represented by Li 2 O-(Si w , Ti 1-w )O 2 -MO shown in FIG. 4 are added, wherein the samples have a capacitance decreasing ratio of as small as within -45% at an impressed voltage of 5 kV/mm and a dielectric loss of 1.0% or less, along with the rate of change of the electrostatic capacitance against temperature changes satisfying the B-level characteristic standard stipulated in the JIS Standard in the temperature range of -25 °C to +85 °C and X7R-level characteristic standard stipulated in the EIA standard in the temperature range of -55 °C to +125 °C. Moreover, the insulation resistances at 25 °C and 150 °C as expressed by the product CR show as high values as 5000 Ω·F or more and 200 Ω·F or more, respectively, when the ceramic capacitor is used under a high electric field strength of 10 kV/mm. The insulation breakdown voltage also shows high values of 12 kV/mm or more under the AC voltage and 14 kV/mm or more under the DC voltage. In addition, an acceleration test at 150 °C and DC 25 kV/mm gave a mean life span as long as 800 hours or more besides enabling a relatively low firing temperature of 1300 °C or less. On the contrary, when the Li 2 O-(Si w , Ti 1-w )O 2 -MO oxides is outside of the composition range described above as shown in the samples No. 1113 to 1117, and 1119, the sintering becomes insufficient or many samples are rejected in the humidity resistance load test even after sintering. The samples with the composition falling on the line A-F and W = 1.0 as in the samples No. 1119 and 1121 have high sintering temperature along with causing many rejects in the humidity resistance load test. When the value of w is less than 0.30 as shown in the sample No. 1122, the sintering temperature becomes high along with causing many rejects in the humidity resistance load test. (Example 9) A material with a composition of BaO 1.010 ·TiO 2 + 0.03Sc 2 O 3 + 0.015BaZrO 3 + 0.05MgO + 0.01 MnO (mole ratio) was prepared using barium titanate in TABLE 1A as a dielectric powder. A monolithic ceramic capacitor was produced by the same method as in Example 1, except that an oxide Li 2 O-TiO 2 -XO shown in Table 1008, having a mean particle size of 1 µm or less produced by heating the material described above at 1200 to 1500 °C, was added as the second side component. The amounts of addition of Al 2 O 3 and ZrO 2 correspond to parts by wight relative to 100 parts by weight of (xSiO 2 - yTiO 2 - zXO). The overall dimensions of the monolithic ceramic capacitor produced is the same as in Example 1. The electric characteristics were then measured by the same method as in Example 1. The results are shown in TABLE 1009. As is evident from TABLE 1008 and TABLE 1009, preferable results are obtained in the samples No. 1201 to 1212 in which oxides with compositions within or on the boundary lines of the area surrounded by the straight lines connecting each spot indicated by A (X = 85, y = 1, z = 14), B (X = 35, y = 51, z = 14), C (X = 30, y = 20, z = 50) and D (X = 39, y = 1, z = 60), (wherein x, y and z represent mole %) of the three component phase diagram of the oxides represented by SiO 2 -TiO 2 -XO shown in FIG. 5 are added, wherein the samples have a capacitance decreasing ratio of as small as -45% at an impressed voltage of 5 kV/mm and a dielectric loss of 1.0% or less, along with the rate of change of the electrostatic capacitance against temperature changes satisfying the B-level characteristic standard stipulated in the JIS Standard in the temperature range of -25 °C to +85 °C and X7R-level characteristic standard stipulated in the EIA standard in the temperature range of -55 °C to +125 °C. Moreover, the insulation resistances at 25 °C and 150 °C as expressed by the product CR show as high values as 5000 Ω·F or more and 200 Ω·F or more, respectively, when the ceramic capacitor is used under a high electric field strength of 10 kV/mm. The insulation breakdown voltage also shows high values of 12 kV/mm or more under the AC voltage and 14 kV/mm or more under the DC voltage. In addition, an acceleration test at 150 °C and DC 25 kV/mm gave a mean life span as long as 800 hours or more besides enabling a relatively low firing temperature of 1300 °C or less. When the composition of the oxide represented by SiO 2 -TiO 2 -XO is out of the composition range described above, on the other hands, sintering becomes insufficient as seen in the samples No. 1213 to 1219 or many rejects occur in the humidity resistance load test even after the sintering. When Al 2 O 3 and/or ZrO2 is allowed to contain in the oxides represented by SiO 2 -TiO 2 -XO as in the samples No. 1211 and 1212, a monolithic capacitor having the insulation resistances of 5400 Ω·F or more and 300 Ω·F or more at 25 °C and 150 °C, respectively, under an electric field strength of 10 kV/mm can be obtained. However, when the amounts of addition of Al 2 O 3 and ZrO 2 exceed 15 parts by weight and 5 parts by weight, respectively, the sintering property is extremely deteriorated as in the samples No. 1217 and 1218. (Example 10) Four kinds of barium titanate (BaTiO 3 ) in TABLE 1, an oxide powder as a first side component and an oxide powder as a second side component were obtained by the same method as in Example 1. Then, BaCO 3 for adjusting the Ba/Ti mole ratio m in barium titanate, and Sc 2 O 3 , Y 2 O 3 , BaZrO 3 and MnO with purity of 99% or more were prepared. These raw material powder and oxide powder to be either the first or second side component were weighed so as to be the composition shown in TABLE 1010 and TABLE 1011. The amount of addition of the first or second side component corresponds to the amount relative to 100 parts of the essential component of ((BaO) m TiO 2 + αM 2 O 3 + βBaZrO 3 + γMnO). A monolithic ceramic capacitor was produced using this weighed compounds by the same method as in Example 1. The overall dimensions of the monolithic ceramic capacitor produced are the same as in Example 1. The electric characteristics were measured by the same method as in Example 1. The results are shown in TABLE 1012 and TABLE 1013. As evident from TABLE 1012 and TABLE 1013, the ceramic capacitor according to the present invention has a capacitance decreasing ratio of as small as within -40% at an impressed DC voltage of 5 kV/mm and a dielectric loss of 1.0% or less, along with the rate of change of the electrostatic capacitance against temperature changes satisfying the B-level characteristic standard stipulated in the JIS Standard in the temperature range of -25 °C to +85 °C and X7R-level characteristic standard stipulated in the EIA standard in the temperature range of -55 °C to +125 °C. Moreover, the insulation resistances at 25 °C and 150 °C as expressed by the product CR show as high values as 4900 Ω·F or more and 190 Ω·F or more, respectively, when the ceramic capacitor is used under a high electric field strength of 10 kV/mm. The insulation breakdown voltage also shows high values of 12 kV/mm or more under the AC voltage and 14 kV/mm or more under the DC voltage. In addition, an acceleration test at 150 °C and DC 25 kV/mm gave a mean life span as long as 800 hours or more besides enabling a relatively low firing temperature of 1300 °C or less. The reason why the composition was limited in the present invention will be described hereinafter. In the composition of (BaO) m TiO 2 + αM 2 O 3 + βBaZrO 3 + γMnO (wherein M 2 O 3 represents at least one of either Sc 2 O 3 and Y 2 O 3 , α, β, and γ representing mole ratio, respectively), the M 2 O 3 content α of less than 0.001 as shown in the sample No. 1301 is not preferable because the temperature characteristic does not satisfy the B-level characteristic / X7R characteristic. On the other hand, the M 2 O 3 content α of more than 0.06 as shown in the sample No. 1302 is also not preferable because the specific dielectric constant is reduced to less than 900. Accordingly, the preferable range of the M 2 O 3 content α is 0.001 ≤ α ≤ 0.06. It is not preferable that the BaZrO 3 content β of zero as in the sample No. 1303 is not preferable since the insulation resistance is low and the voltage dependency of the insulating resistance is larger than that of the composition system containing BaZrO 3 . It is also not preferable that the BaZrO 3 content β is more than 0.06 as in the sample No. 1304 because the temperature characteristic does not satisfy the B-level characteristic / X7R characteristic, along with shortening the mean life span. Accordingly, the preferable range of the BaZrO 3 content β is 0.005 ≤ β ≤ 0.06. It is not preferable that, as seen in the sample No. 1305, the MgO content γ is 0.001 since measurements becomes impossible due to semiconductor formation. It is not preferable that the MgO content γ exceeds 0.13 as in the sample No. 1306, because the temperature characteristic does not satisfy the X7R characteristic besides the insulation resistance is low and mean life span is shortened. Accordingly, the preferable range of the MgO content γ is in the range of 0.001 < γ ≤ 0.13. It is not preferable that the BaO/TiO 2 ratio m is less than 1.000 as in the sample No. 1307 because measurements are impossible due to formation of semiconductors. It is also not preferable that, as seen in the sample No. 1308, the BaO/TiO 2 ratio m is 1.000 since the insulation resistance as well as the AC and DC breakdown voltage becomes low along with shortening the mean life span. It is not preferable, on the other hand, that the BaO/TiO 2 ratio m is over 1.035 as in the samples No. 1309 and 1310 since measurements becomes impossible due to insufficient sintering. Accordingly, the BaO/TiO 2 ratio m in the range of 1.000 < m ≤ 1.035 is preferable. It is not preferable that the amount of addition of the first or second side component is zero as in the samples No. 1311 and 1313 because measurements are impossible due to insufficient sintering. It is not preferable that the amount of addition of the first or second side component exceeds 3.0 parts by weight as seen in the samples No. 1312 and 1314, on the other hand, because the dielectric loss exceeds 1.0% and the insulation resistance and insulation breakdown voltage are lowered along with shortening the mean life span. Accordingly, the preferable content of either the first or the second components is in the range of 0.2 to 3.0 parts by weight. The contents of the alkali earth metal oxides contained in barium titanate as impurities are suppressed below 0.02% by weight because, as in the sample No. 1315, when the contents of the alkali earth metal oxides exceeds 0.02% by weight, the dielectric constant is decreased. (Example 11) A material with a composition of BaO 1.010 ·TiO 2 + 0.02Y 2 O 3 + 0.01BaZrO 3 + 0.04 MnO (mole ratio) was prepared using barium titanate in TABLE 1A as a dielectric powder. A monolithic ceramic capacitor was produced by the same method as in Example 1, except that an oxide represented by Li 2 O-(Si,Ti)O 2 -MO as shown in Table 1006, having a mean particle size of 1. µm or less produced by heating the material described above at 1200 to 1500 °C, was added as the first side component. The overall dimensions of the monolithic ceramic capacitor produced is the same as in Example 1. The electric characteristics were then measured by the same method as in Example 1. The results are shown in TABLE 1014. The sample No. 1401 to 1422 in TABLE 1014 correspond to the samples NO. 1101 to 1122 in TABLE 1006, respectively. For example, the sample No. 1401 in TABLE 1014 was obtained by adding the side component of the sample No. 1101 in TABLE 1006. As is evident from the samples NO. 1401 to 1412, 1418 and 1420 in TABLE 1014, preferable results are obtained in the samples in which oxides of the samples No. 1101 to 1112, 1118 and 1120 in TABLE 1006 with compositions within or on the boundary lines of the area surrounded by the straight lines connecting each spot indicated by A (X = 20, y = 80, z = 0), B (X = 10, y = 80, z = 10), C (X = 10, y = 70, z = 20), D (X = 35, y = 45, z = 20), E (x = 45, y = 45, z = 10) and F (x = 45, y = 55, z = 0) (wherein x, y and z represent mole %, w represent mole ratio and w is in the range of 0.3 ≤ w < 1.0 in the composition on the line A - F) inside of the three component phase diagram of the oxides represented by Li 2 O-(Si w , Ti 1-w )O 2 -MO shown in FIG. 4 are added as side components, wherein the samples have a capacitance decreasing ratio of as small as within -40% at an impressed voltage of 5 kV/mm and a dielectric loss of 1.0% or less, along with the rate of change of the electrostatic capacitance against temperature changes satisfying the B-level characteristic standard stipulated in the JIS Standard in the temperature range of -25 °C to +85 °C and X7R-level characteristic standard stipulated in the EIA standard in the temperature range of -55 °C to +125 °C. Moreover, the insulation resistances at 25 °C and 150 °C as expressed by the product CR show as high values as 4900 Ω·F or more and 200 Ω·F or more, respectively, when the ceramic capacitor is used under a high electric field strength of 10 kV/mm. The insulation breakdown voltage also shows high values of 12 kV/mm or more under the AC voltage and 14 kV/mm or more under the DC voltage. In addition, an acceleration test at 150 °C and DC 25 kV/mm gave a mean life span as long as 800 hours or more besides enabling a relatively low firing temperature of 1300 °C or less. On the contrary, when the oxides represented by Li 2 O-(Si w , Ti 1-w )O 2 -MO is outside of the composition range described above as shown in the samples No. 1113 to 1117, and 1119 in TABLE 1006, the sintering becomes insufficient or many samples are rejected in the humidity resistance load test even after sintering as seen in the samples NO. 1413 to 1417 and 1419 in TABLE 1014. The samples with the composition falling on the line A-F and W = 1.0 as in the samples No. 1119 and 1121 in TABLE 1006 have high sintering temperature along with causing many rejects in the humidity resistance load test as seen in the samples No. 1419 and 1421 in TABLE 1014. When the value of w is less than 0.30 as shown in the samples No. 1122 in TABLE 1006, the sintering temperature becomes high along with causing many rejects in the humidity resistance load test as seen in the sample No. 1422 in TABLE 1014. (Example 12) A material with a composition of BaO 1.010 ·TiO 2 + 0.02Sc 2 O 3 + 0.01BaZrO 3 + 0.04 MnO (mole ratio) was prepared using barium titanate in TABLE 1A as a dielectric powder. A monolithic ceramic capacitor was produced by the same method as in Example 1, except that an oxide represented by SiO 2 -TiO 2 -XO shown in Table 1008, having a mean particle size of 1 µm or less produced by heating the material described above at 1200 to 1500 °C, was added as the second side component. The overall dimensions of the monolithic ceramic capacitor produced is the same as in Example 1. The electric characteristics were then measured by the same method as in Example 1. The results are shown in TABLE 1015. In TABLE 1015, the samples NO. 1501 to 1519 corresponds to the samples NO. 1201 to 1219 in TABLE 1008. For example, the sample No. 1501 in TABLE 1015 was obtained by adding the side component of the sample No. 1201 in TABLE 1008. As is evident from Samples NO. 1501 to 1512 in TABLE 1015, preferable results are obtained in the samples, in which oxides of the samples NO. 1201 to 1212 in TABLE 1008 with compositions within or on the boundary lines of the area surrounded by the straight lines connecting each spot indicated by A (X = 85, y = 1, z = 14), B (X = 35, y = 51, z = 14), C( X = 30, y = 20, z = 50) and D (X = 39, y = 1, z = 60), (wherein x, y and z represent mole %), of the three component phase diagram of the oxides represented by SiO 2 -TiO 2 -XO shown in FIG. 5 are added as a side component, wherein the samples have a capacitance decreasing ratio of as small as within -40% at an impressed voltage of 5 kV/mm and a dielectric loss of 1.0% or less, along with the rate of change of the electrostatic capacitance against temperature changes satisfying the B-level characteristic standard stipulated in the JIS Standard in the temperature range of -25 °C to +85 °C and X7R-level characteristic standard stipulated in the EIA standard in the temperature range of -55 °C to +125 °C. Moreover, the insulation resistances at 25 °C and 150 °C as expressed by the product CR show as high values as 4900 Ω·F or more and 190 Ω·F or more, respectively, when the ceramic capacitor is used under a high electric field strength of 10 kV/mm. The insulation breakdown voltage also shows high values of 12 kV/mm or more under the AC voltage and 14 kV/mm or more under the DC voltage. In addition, an acceleration test at 150 °C and DC 25 kV/mm gave a mean life span as long as 800 hours or more and no rejections were found in the humidity resistance load test besides enabling a relatively low firing temperature of 1300 °C or less. When the oxide SiO 2 -TiO 2 -XO has a composition outside of the composition described above as in the samples No. 1213 to 1219 in TABLE 1008, on the contrary, sintering becomes insufficient or many rejection appear in the humidity resistance load test even after sintering as seen in the samples No. 1513 to 1519 in TABLE 1015. While a monolithic capacitor having an insulation resistance of 5290 Ω·F or more and 310 Ω·F or more at 25 °C and 150 °C, respectively, under a strong electric field of 10 kV/mm can be obtained as shown in the samples No. 1511 and 1512 in TABLE 1015 by allowing Al 2 O 3 and/or ZrO 2 to contain in the SiO 2 -TiO 2 -XO oxides as in the sample No. 1211 and 1212 in Table 1008, sintering property is extremely decreased when Al 2 O 3 and ZrO 2 are added in an amounts of 15 parts by weight or more and 5 parts by weight or more, respectively, as in the samples No. 1217 and 1218 in TABLE 1008. (Example 13) After preparing and weighing TiCl 4 and Ba(NO 3 ) 2 having a variety of purity as starting materials, the compounds were precipitated as titanyl barium oxalate (BaTiO(C 2 O 4 )·4H 2 O) by adding oxalic acid. This precipitate was decomposed by heating at a temperature of 1000 °C or more to synthesize four kinds of barium titanate listed in TABLE 1. Oxides, carbonates or hydroxides as each component of the first side component were weighed so as to be a composition ratio (mole ratio) of 0.25Li 2 O-0.65(0.30TiO 2 ·0.70SiO 2 )-0.10Al 2 O 3 to obtain a powder by crushing and mixing. Likewise, oxides, carbonates or hydroxides as each component of the second side component were weighed so as to be a composition ratio (mole ratio) of 0.66SiO 2 -0.17TiO 2 -0.15BaO-0.02MnO (mole ratio) to obtain a powder by crushing and mixing. Oxide powders of the first and second side components were placed in separate platinum crucibles and heated at 1500 °C. After quenching and crushing the mixture, each oxide powder with a mean particle size of 1 µm or less was obtained. In the next step, BaCO 3 for adjusting the mole ratio Ba/Ti (m) in barium titanate, Eu 2 O 3 , Gd 2 O 3 , Tb 2 O 3 , Dy 2 O 3 , Ho 2 O 3 , Er 2 O 3 , Tm 2 O 3 and Yb 2 O 3 , and BaZrO 3 , MgO and MnO, each having a purity of 99% or more, were prepared. These raw material powders and the oxides described above to be either one of the first or second side component were weighted so as to form compositions shown in TABLE 2002 and TABLE 2003. The amounts of addition of the first and second side components are indicated by parts by weight relative to 100 parts by weight of the essential component (BaO) m TiO 2 + αR 2 O 3 + βBaZrO 3 + γMgO + gMnO. Organic solvents such as polyvinyl butyral binder and ethanol were added to the weighed compounds, which were mixed in a ball mill in an wet state to prepare a ceramic slurry. This ceramic slurry was formed into a sheet by a doctor blade method to obtain a rectangular shaped green sheet with a thickness of 35 µm, followed by printing an electroconductive paste mainly composed of Ni on the ceramic green sheet to form an electroconductive paste layer for forming inner electrodes. Then, a plurality of the ceramic green sheets on which the electroconductive layer is formed were laminated so that the sides where the electroconductive paste is projected out are alternately placed with each other, thus obtaining a monolithic body. This monolithic body was heated at 350 °C in a N 2 atmosphere and, after allowing the binder to decompose, the monolithic body was fired at the temperatures shown in TABLE 2004 and TABLE 2005 in a reducing atmosphere comprising H 2 -N 2 -H 2 O gases under an oxygen partial pressure of 10 -9 to 10 -12 MPa for two hours, thereby obtaining a ceramic sintered body. The both side faces of the ceramic sintered body were coated with a silver paste containing B 2 O 3 -Li 2 O-SiO 2 -BaO glass frits and fired at a temperature of 600 °C in a N 2 atmosphere, thereby obtaining outer electrodes electrically connected to the inner electrodes. The overall dimensions of the monolithic ceramic capacitor thus obtained were 5.0 mm in width, 5.7 mm in length and 2.4 mm in thickness while the thickness of the dielectric ceramic layer was 30 µm. Total number of the effective dielectric ceramic layers were 57, the area of the confronting electrode per one layer being 8.2 × 10 -6 m 2 . Electric characteristics of these monolithic ceramic capacitors were measured. The electrostatic capacitance (C) and dielectric loss (tan δ) were measured using an automatic bridge type measuring instrument at 1 kHz, 1 Vrms and 25 °C and the dielectric constant (ε) was calculated from the electrostatic capacitance. Next, the insulation resistance was measured using an insulation resistance tester at 25 °C and 150 °C by impressing direct current voltages of 315 V (or 10 kV/mm) and 945 V (or 30 kV/mm) for 2 minutes, obtaining a product of the electrostatic capacitance and insulation resistance, or a product CR. The rate of change of the electrostatic capacitance against temperature changes was also measured. The rate of change at -25 °C and 85 °C by taking the electrostatic capacitance at 20 °C as a standard (ΔC/C20), the rate of change at -55 °C and 125 °C by taking the electrostatic capacitance at 20 °C as a standard (ΔC/C25) and the maximum value of the rate of change (|ΔC| max) as an absolute value in the temperature range of -55 °C to 125 °C were measured as the electrostatic capacitances against temperature changes. The DC vias characteristic was also evaluated. First, the electrostatic capacitance when an AC voltage of 1 kHz and 1 Vrms was impressed was measured. Then, the electrostatic capacitance when a DC voltage of 150 V and an AC voltage of 1 kHz and 1 Vrms were simultaneously impressed was measured, thereby the rate of reduction of the electrostatic capacitance (ΔC/C) due to loading the DC voltage was calculated. In the high temperature load test, a direct current voltage of 750 V (or 25 kV/mm) was impressed at 150 °C on 36 pieces of each sample to measure the time dependent changes of the insulation resistance. The time when the insulation resistance of each sample was reduced below 10 6 Ω was defined to be a life span time and mean life span time was evaluated. In the humidity resistance test, the number of the test pieces having an insulation resistance of 10 6 Ω or less among the 72 test pieces were counted after impressing a DC voltage of 315 V under an atmospheric pressure of 2 atm (relative humidity 100%) at 120 °C for 250 hours. Insulation breakdown voltages under AC and DC voltages were measured by impressing AC and DC voltages at a voltage increase rate of 100 V/sec. The results described above are listed in TABLE 2004 and TABLE 2005. It is evident from Table 2002 to TABLE 2005 that the monolithic ceramic capacitor according to the present invention has a capacitance decreasing ratio of as small as within -45% at an impressed voltage of 5 kV/mm and a dielectric loss of less than 1.0 %, wherein the rate of change against temperature changes satisfies both the B-level characteristic standard stipulated in the JIS Standard in the temperature range of -25 °C to +85 °C and X7R-level characteristic standard stipulated in the EIA standard in the temperature range of -55 °C to +125 °C. Moreover, the insulation resistances at 25 °C and 150 °C as expressed by the product CR show as high values as 5000 Ω·F or more and 200 Ω·F or more, respectively, when the ceramic capacitor is used under a high electric field strength of 10 kV/mm. The insulation breakdown voltage also shows high values of 12 kV/mm or more under the AC voltage and 14 kV/mm or more under the DC voltage. In addition, an acceleration test at 150 °C and DC 25 kV/mm gave a mean life span as long as 800 hours or more besides enabling a relatively low firing temperature of 1300 °C or less. The reason why the composition was limited in the present invention will be described hereinafter. In the composition of (BaO) m TiO 2 + αR 2 O 3 + βBaZrO 3 + γMgO + gMnO (wherein R 2 O 3 represents at least one compound selected from Eu 2 O 3 , Gd 2 O 3 , Tb 2 O 3 , Dy 2 O 3 , Ho 2 O 3 , Er 2 O 3 , Tm 2 O 3 and Yb 2 O 3 , α, β, γ, and g representing mole ratio, respectively), the R 2 O 3 content α of less than 0.001 as shown in the sample No. 2001 is not preferable because the insulation resistance is low and the product CR becomes small. On the other hand, the R 2 O 3 content α of more than 0.06 as shown in the sample No. 2002 is also not preferable because the temperature characteristic does not satisfy the B-level characteristic / X7R characteristic, being poor in reliability. Accordingly, the preferable range of the R 2 O 3 content α is 0.001 ≤ α ≤ 0.06. The BaZrO 3 content β of zero as in the sample No. 2003 is not preferable since the insulation resistance is low and the voltage dependency of the insulating resistance is larger than that of the composition system containing BaZrO 3 . It is also not preferable that the BaZrO 3 content β is more than 0.06 as in the sample No. 2004 because the temperature characteristic does not satisfy the B-level characteristic / X7R characteristic, along with shortening the mean life span. Accordingly, the preferable range of the BaZrO 3 content β is 0.005 ≤ β ≤ 0.06. It is not preferable that, as seen in the sample No. 2005, the MgO content γ is 0.001 since the insulation resistance becomes low and the temperature characteristic does not satisfy the B-level characteristic / X7R characteristic. On the other hand, it is not preferable that the MgO content γ exceeds 0.12 as in the sample No. 2006, because the sintering temperature becomes high, the dielectric loss exceeds 2.0%, the number of rejections in the humidity resistance load test is extremely increased along with the mean life span being short. Accordingly, the preferable range of the MgO content γ is in the range of 0.001 < γ ≤ 0.12. It is not preferable that, as seen in the sample No. 2007, the MnO content g is 0.001 since measurement becomes impossible due to formation of semiconductors. It is not preferable, on the other hand, that the MnO content g exceeds 0.12 as seen in the sample No. 2008 because the temperature characteristic X7R is not satisfied and the insulation resistance is lowered besides the mean life span becomes short. Accordingly, the preferable range of the MnO content g is in the range of 0.001 < g ≤ 0.12. It is not preferable that, as in the sample No. 2009, the combined amount of γ + g of the MgO content and MnO content exceeds 0.13 because the dielectric loss is increased to 2.0% and the mean life span is shortened besides the rejection number in the humidity resistance load test increases. Accordingly, the combined amount of γ + g of the MgO content and MnO content is preferably in the range of γ + g ≤ 0.13. It is not preferable that the BaO/TiO 2 ratio m is less than 1.000 as in the sample No. 2010 because measurements are impossible due to formation of semiconductors. It is also not preferable that, as seen in the sample No. 2011, the BaO/TiO 2 ratio m is 1.000 since the insulation resistance as well as the AC and DC breakdown voltage becomes low along with shortening the mean life span. It is not preferable, on the other hand, that the BaO/TiO 2 ratio m is over 1.035 as in the samples No. 2012 and 2013 since measurements becomes impossible due to insufficient sintering. Accordingly, the BaO/TiO 2 ratio m in the range of 1.000 < m ≤ 1.035 is preferable. It is not preferable that the amount of addition of the first or second side component is zero as in the samples No. 2014 and 2016 because measurements are impossible due to insufficient sintering. It is not preferable that the amount of addition of the first or second side component exceeds 3.0 parts by weight as seen in the samples No. 2015 and 2017, on the other hand, because the dielectric loss exceeds 1.0% and the insulation resistance and insulation breakdown voltage are lowered along with shortening the mean life span. Accordingly, the preferable content of either the first or the second components is 0.2 to 3.0 parts by weight. The contents of the alkali earth metal oxides contained in barium titanate as impurities are suppressed below 0.02% by weight because, when the contents of the alkali earth metal oxides exceeds 0.02% by weight as in the sample No. 2018, the dielectric constant is decreased. (Example 14) A material with a composition of BaO 1.010 ·TiO 2 + 0.03Gd 2 O 3 + 0.025BaZrO 3 + 0.05MgO + 0.01 MnO (mole ratio) was prepared using barium titanate in TABLE 1A as a dielectric powder. A monolithic ceramic capacitor was produced by the same method as in Example 1, except that an oxide represented by Li 2 O-(Si, Ti)O 2 -MO shown in Table 2006, having a mean particle size of 1 µm or less produced by heating the material described above at 1200 to 1500 °C, was added as the first side component. The overall dimensions of the monolithic ceramic capacitor produced is the same as in Example 1. Sample No. The first side component Amount of addition (parts by weight) Composition (mol%, except w) Li 2 O (Si w Ti 1-w )O 2 w Al 2 O 3 ZrO 2 2101 1 20 80 0.3 0 0 2102 1 10 80 0.6 5 5 2103 0.8 10 70 0.5 20 0 2104 0.8 35 45 1 10 10 2105 1.5 45 45 0.5 10 0 2106 1.5 45 55 0.3 0 0 2107 1 20 70 0.6 5 5 2108 1 20 70 0.4 10 0 2109 1.2 30 60 0.7 5 5 2110 1.2 30 60 0.8 10 0 2111 2 40 50 0.6 5 5 2112 2 40 50 0.9 0 10 2113 1.5 10 85 0.4 5 0 2114 2 5 75 0.6 10 10 2115 1.2 20 55 0.5 25 0 2116 1 45 40 0.8 0 15 2117 0.8 50 45 0.7 5 0 2118 1.2 25 75 0.9 0 0 2119 1.5 25 75 1 0 0 2120 1 35 65 0.9 0 0 2121 1.5 35 65 1 0 0 2122 1.2 20 70 0.2 0 10 The electric characteristics were then measured by the same method as in Example 1. The results are shown in TABLE 2007. As is evident from TABLE 2006 and TABLE 2007, preferable results are obtained in the samples No. 2101 to 2112, 2118 and 2120 in which the oxides with compositions within or on the boundary lines of the area surrounded by the straight lines connecting each spot indicated by A (X = 20, y = 80, z = 0), B (X = 10, y = 80, z = 10), C (X = 10, y = 70, z = 20), D (X = 35, y = 45, z = 20), E (x = 45, y = 45, z = 10) and F (x = 45, y = 55, z = 0) (wherein x, y and z represent mole % and w represents mole ratio, w being in the range of 0.3 ≤ w < 1.0 when it falls on the line A - F) of the three component phase diagram of the oxides represented by Li 2 O-(Si w , Ti 1-w )O 2 -MO shown in FIG. 4 are added, wherein the samples have a capacitance decreasing ratio of as small as within -45% at an impressed voltage of 5 kV/mm and a dielectric loss of 1.0% or less, along with the rate of change of the electrostatic capacitance against temperature changes satisfying the B-level characteristic standard stipulated in the JIS Standard in the temperature range of -25 °C to +85 °C and X7R-level characteristic standard stipulated in the EIA standard in the temperature range of -55 °C to +125 °C. Moreover, the insulation resistances at 25 °C and 150 °C as expressed by the product CR show as high values as 5000 Ω·F or more and 200 Ω·F or more, respectively, when the ceramic capacitor is used under a high electric field strength of 10 kV/mm. The insulation breakdown voltage also shows high values of 12 kV/mm or more under the AC voltage and 14 kV/mm or more under the DC voltage. In addition, an acceleration test at 150 °C and DC 25 kV/mm gave a mean life span as long as 800 hours or more besides enabling a relatively low firing temperature of 1300 °C or less. When the oxide represented by Li 2 O-(Si w Ti 1-w )O 2 -MO has a composition outside of the composition described above as in the samples No. 2113 to 2117 and 2119, on the other hand, sintering becomes insufficient or many rejection appear in the humidity resistance load test even after sintering. When the composition falls on the line A - F and w = 1.0, the sintering temperature becomes high, giving a lot of rejections in the humidity resistance load test as shown in the samples No. 2119 and 2121. When the value of w is less than 3.0, the sintering temperature becomes so high that many rejections appear in the humidity resistance test as shown in Sample No. 2122. (Example 15) A material with a composition of BaO 1.010 ·TiO 2 + 0.03Dy 2 O 3 + 0.02BaZrO 3 + 0.05 MgO + 0.01 MnO (mole ratio) was prepared using barium titanate in TABLE 1A as a dielectric powder. A monolithic ceramic capacitor was produced by the same method as in Example 1, except that an oxide represented by SiO 2 -TiO 2 -XO shown in Table 2008, having a mean particle size of 1 µm or less produced by heating the material described above at 1200 to 1500 °C, was added as the second side component. The amounts of addition of Al 2 O 3 and ZrO 3 are indicated by parts by weight relative to 100 parts by weight of the second side component (xSiO 2 -yTiO 2 -zXO). The overall dimensions of the monolithic ceramic capacitor produced is the same as in Example 1. The electric characteristics were then measured by the same method as in Example 1. The results are shown in TABLE 2009. As is evident from TABLE 2008 and TABLE 2009, preferable results are obtained in the samples No. 2201 to 2212, in which oxides with compositions within or on the boundary lines of the area surrounded by the straight lines connecting each spot indicated by A (x = 85, y 1, z = 14), B {X = 35, y = 51, z = 14), C (X = 30, y = 20, z = 50) and D (X = 39, y = 1, z = 60), (wherein x, y and z represent mole %), of the three component phase diagram of the oxides represented by SiO 2 -TiO 2 -XO shown in FIG. 5 are added, wherein the samples have a capacitance decreasing ratio of as small as within -45% at an impressed voltage of 5 kV/mm and a dielectric loss of 1.0% or less, along with the rate of change of the electrostatic capacitance against temperature changes satisfying the B-level characteristic standard stipulated in the JIS Standard in the temperature range of -25 °C to +85 °C and X7R-level characteristic standard stipulated in the EIA standard in the temperature range of -55 °C to +125 °C. Moreover, the insulation resistances at 25 °C and 150 °C as expressed by the product CR show as high values as 5000 Ω·F or more and 200 Ω·F or more, respectively, when the ceramic capacitor is used under a high electric field strength of 10 kV/mm. The insulation breakdown voltage also shows high values of 12 kV/mm or more under the AC voltage and 14 kV/mm or more under the DC voltage. In addition, an acceleration test at 150 °C and DC 25 kV/mm gave a mean life span as long as 800 hours or more and no rejections were found in the humidity resistance load test besides enabling a relatively low firing temperature of 1300 °C or less. When the oxide represented by SiO 2 -TiO 2 -XO has a composition outside of the composition described above as in the samples No. 2213 to 2219, on the contrary, sintering becomes insufficient or many rejection appear in the humidity resistance load test even after sintering. While a monolithic capacitor having an insulation resistance of 5400 Ω·F or more and 300 Ω·F or more at 25 °C and 150 °C, respectively, under a strong electric field of 10 kV/mm can be obtained by allowing Al 2 O 3 and/or ZrO 2 to contain in the SiO 2 -TiO 2 -XO oxides as in the sample No. 2211 and 2212, sintering property is extremely decreased when Al 2 O 3 and ZrO 2 are added in an amounts of 15 parts by weight or more and 5 parts by weight or more, respectively, as in the samples No. 2217 and 2218. (Example 16) Four kinds of barium titanate (BaTiO 3 ), an oxide powder as a first side component and an oxide powder as a second side component were obtained by the same method as in Example 1. Then, BaCO 3 for adjusting the mole ratio Ba/Ti in barium titanate, Eu 2 O 3 , Gd 2 O 3 , Tb 2 O 3 , Dy 2 O 3 , Ho 2 O 3 , Er 2 O 3 , Tm 2 O 3 and Yb 2 O 3 , and MnO, each having a purity of 99% or more, were prepared. These raw material powders and the oxides described above to be either the first or the second component were weighed so as to be the composition in TABLE 2010 and TABLE 2011. The amounts of addition of the first and second side components are defined by the amount of addition relative to 100 parts by weight of (BaO) m TiO 2 + αR 2 O 3 + βBaZrO 3 + γMnO. A monolithic ceramic capacitor was produced by the same method as in Example 1 using these weighed materials. The overall dimensions of the monolithic ceramic capacitor are the same as in Example 1. The electric characteristics were measured by the same method as in Example 1. The results are shown in TABLE 2012 and TABLE 2013. It is evident from Table 2010 to TABLE 2013 that the monolithic ceramic capacitor according to the present invention has a capacitance decreasing ratio of as small as within -40% or less at an impressed voltage of 5 kV/mm and a dielectric loss of less than 1.0 %, wherein the rate of change against temperature changes satisfies both the B-level characteristic standard stipulated in the JIS Standard in the temperature range of -25 °C to +85 °C and X7R-level characteristic standard stipulated in the EIA standard in the temperature range of -55 °C to +125 °C. Moreover, the insulation resistances at 25 °C and 150 °C as expressed by the product CR show as high values as 5000 Ω·F or more and 200 Ω·F or more, respectively, when the ceramic capacitor is used under a high electric field strength of 10 kV/mm. The insulation breakdown voltage also shows high values of 12 kV/mm or more under the AC voltage and 14 kV/mm or more under the DC voltage. In addition, an acceleration test at 150 °C and DC 25 kV/mm gave a mean life span as long as 800 hours or more besides enabling a relatively low firing temperature of 1300 °C or less. The reason why the composition was limited in the present invention will be described hereinafter. In the composition of (BaO) m TiO 2 + αR 2 O 3 + βBaZrO 3 + γMgO (wherein R 2 O 3 represents at least one compound selected from Eu 2 O 3 , Gd 2 O 3 , Tb 2 O 3 , Dy 2 O 3 , Ho 2 O 3 , Er 2 O 3 , Tm 2 O 3 and Yb 2 O 3 , α, β and γ representing mole ratio, respectively), the Mn 2 O 3 content α of less than 0.001 as shown in the sample No. 2301 is not preferable because the temperature characteristics does not satisfy the B-level characteristics / X7R characteristics. On the other hand, the Mn 2 O 3 content α of more than 0.06 as shown in the sample No. 2302 is also not preferable because the specific dielectric constant becomes as small as less than 900. Accordingly, the preferable range of the Mn 2 O 3 content α is 0.001 ≤ α ≤ 0.06. The BaZrO 3 content β of zero as in the sample No. 2303 is not preferable since the insulation resistance is low and the voltage dependency of the insulating resistance is larger than that of the composition system containing BaZrO 3 . It is also not preferable that the BaZrO 3 content β is more than 0.06 as in the sample No. 2304 because the temperature characteristic does not satisfy the B-level characteristic / X7R characteristic, along with shortening the mean life span. Accordingly, the preferable range of the BaZrO 3 content β is 0.005 ≤ β ≤ 0.06. It is not preferable that, as seen in the sample No. 2305, the MgO content γ is 0.001 since measuring is impossible due to formation of semiconductors. On the other hand, it is not preferable that the MgO content γ exceeds 0.13 as in the sample No. 2306, because the temperature characteristic X7R is not satisfied and the insulation capacitance is low along with the mean life span being short. Accordingly, the Mn content γ is preferably in the range of 0.001 ≤ γ < 0.13. It is not preferable that the BaO/TiO 2 ratio m is less than 1.000 as in the sample No. 2307 because measurements are impossible due to formation of semiconductors. It is also not preferable that, as seen in the sample No. 2308, the BaO/TiO 2 ratio m is 1.000 since the insulation resistance as well as the AC and DC breakdown voltage becomes low along with shortening the mean life span. It is not preferable, on the other hand, that the BaO/TiO 2 ratio m is over 1.035 as in the samples No. 2309 and 2310 since measurements becomes impossible due to insufficient sintering. Accordingly, the BaO/TiO 2 ratio m in the range of 1.000 < m ≤ 1.035 is preferable. It is not preferable that the amount of addition of the first or second side component is zero as in the samples No. 2311 and 2313 because measurements are impossible due to insufficient sintering. It is not preferable that the amount of addition of the first or second side component exceeds 3.0 parts by weight as seen in the samples No. 2312 and 2314, on the other hand, because the dielectric loss exceeds 1.0% and the insulation resistance and insulation breakdown voltage are lowered along with shortening the mean life span. Accordingly, the preferable content of either the first or the second components is 0.2 to 3.0 parts by weight. The contents of the alkali earth metal oxides contained in barium titanate as impurities are suppressed below 0.02% by weight because, when the contents of the alkali earth metal oxides exceeds 0.02% by weight as in the sample No. 2315, the dielectric constant is decreased. (Example 17) A material with a composition of BaO 1.010 ·TiO 2 + 0.015Ho 2 O 3 + 0.01BaZrO 3 + 0.03 MnO (mole ratio) was prepared using barium titanate in TABLE 1A as a dielectric powder. A monolithic ceramic capacitor was produced by the same method as in Example 1, except that an oxide represented by Li 2 O-(Si, Ti)O 2 -MO shown in Table 2006, having a mean particle size of 1 µm or less produced by heating the material described above at 1200 to 1500 °C, was added as the first side component. The overall dimensions of the monolithic ceramic capacitor produced is the same as in Example 1. The electric characteristics were measured by the same method as in Example 1. The results are shown in TABLE 2014. In Table 2014, the samples No. 2401 to 2422 correspond to the samples No. 2101 to 2122 in TABLE 2006. For example, the sample No. 2401 in TABLE 2014 was obtained by adding the side component of the sample No. 2101 in TABLE 2006. As is evident from the samples No. 2401 to 2412, 2418 and 2420, preferable results are obtained in the samples in which oxides of the samples No. 2101 to 2112, 2118 and 2120 in TABLE 2006 with compositions within or on the boundary lines of the area surrounded by the straight lines connecting each spot indicated by A (x = 20, y = 80, z = 0), B (X = 10, y = 80, z = 10), C (X = 10, y = 70, z = 20), D (X = 35, y = 45, z = 20), E (x = 45, y = 45, z =10) and F (x = 45, y = 55, z = 0) (wherein x, y and z represent mole %, w represents mole ratio, w being within the range of 0.3 ≤ w < 1.0 when it falls on the line A - F) in the three component phase diagram of the oxides represented by Li 2 O-(Si w , Ti 1-w )O 2 -MO in FIG. 4 are added, wherein the samples have a capacitance decreasing ratio of as small as within -40% at an impressed voltage of 5 kV/mm and a dielectric loss of 1.0% or less, along with the rate of change of the electrostatic capacitance against temperature changes satisfying the B-level characteristic standard stipulated in the JIS Standard in the temperature range of -25 °C to +85 °C and X7R-level characteristic standard stipulated in the EIA standard in the temperature range of -55 °C to +125 °C. Moreover, the insulation resistances at 25 °C and 150 °C as expressed by the product CR show as high values as 5000 Ω·F or more and 190 Ω·F or more, respectively, when the ceramic capacitor is used under a high electric field strength of 10 kV/mm. The insulation breakdown voltage also shows high values of 12 kV/mm or more under the AC voltage and 14 kV/mm or more under the DC voltage. In addition, an acceleration test at 150 °C and DC 25 kV/mm gave a mean life span as long as 800 hours or more besides enabling a relatively low firing temperature of 1300 °C or less. When the oxide represented by Li 2 O-(Si w , Ti 1-w )O 2 -MO has a composition outside of the composition described above as in the samples No. 2113 to 2117 and 2119, on the other hand, sintering becomes insufficient or many rejection appear in the humidity resistance load test even after sintering as seen in the samples No. 2413 to 2417 and 2419 in TABLE 2014. When the composition falls on the line A - F and w = 1.0 as in the samples No. 2119 and 2121 in TABLE 2006, the sintering temperature becomes high and many rejects appear in the humidity resistance load test. When the value of w is less than 0.30 as in the sample No. 2122 in TABLE 2006, he sintering temperature becomes high and many rejects appear in the humidity resistance load test as seen in the sample No. 2422 in TABLE 2014. (Example 18) A material with a composition of Ba0 1.010 ·TiO 2 + 0.025Eu 2 O 3 + 0.01BaZrO 3 + 0.05 MnO (mole ratio) was prepared using barium titanate "A" in TABLE 1 as a dielectric powder. A monolithic ceramic capacitor was produced by the same method as in Example 1, except that an oxide Si 2 O-TiO 2 -XO shown in Table 2008, having a mean particle size of 1 µm or less produced by heating the material described above at 1200 to 1500 °C, was added as the second side component. The overall dimensions of the monolithic ceramic capacitor produced is the same as in Example 1. The electric characteristics were measured by the same method as in Example 1. The results are shown in TABLE 2015. In Table 2015, the samples No. 2501 to 2519 in TABLE 2015 correspond to the samples No. 2201 to 2219 in TABLE 2008. For example, the sample No. 2501 in TABLE 2015 was obtained by adding the side component of the sample No. 2201 in TABLE 2008. As is evident from the samples No. 2501 to 2512 in TABLE 2015 , preferable results are obtained in the samples in which oxides of the samples No. 2201 to 2212 in TABLE 2008 with compositions within or on the boundary lines of the area surrounded by the straight lines connecting each spot indicated by A (x = 85, y = 1, z = 14), B (X = 35, y = 51, z = 14), C (X = 30, y = 20, z = 50) and D (X = 39, y = 1, z = 60) (wherein x, y and z represent mole %) in the three component phase diagram of the SiO 2 -TiO 2 -XO oxides shown in FIG. 5 are added, wherein the samples have a capacitance decreasing ratio of as small as within -40% at an impressed voltage of 5 kV/mm and a dielectric loss of 1.0% or less, along with the rate of change of the electrostatic capacitance against temperature changes satisfying the B-level characteristic standard stipulated in the JIS Standard in the temperature range of -25 °C to +85 °C and X7R-level characteristic standard stipulated in the EIA standard in the temperature range of -55 °C to +125 °C. Moreover, the insulation resistances at 25 °C and 150 °C as expressed by the product CR show as high values as 5000 Ω·F or more and 200 Ω·F or more, respectively, when the ceramic capacitor is used under a high electric field strength of 10 kV/mm. The insulation breakdown voltage also shows high values of 12 kV/mm or more under the AC voltage and 14 kV/mm or more under the DC voltage. In addition, an acceleration test at 150 °C and DC 25 kV/mm gave a mean life span as long as 800 hours or more besides enabling a relatively low firing temperature of 1300 °C or less. When the oxide SiO 2 -TiO 2 -XO has a composition outside of the composition described above as in the samples No. 2213 to 2119 in TABLE 2008, on the other hand, sintering becomes insufficient or many rejection appear in the humidity resistance load test even after sintering as seen in the samples No. 2513 to 2519 in TABLE 2015. While a monolithic capacitor having an insulation resistance of 5400 Ω·F or more and 330 Ω·F or more at 25 °C and 150 °C, respectively, under a strong electric field of 10 kV/mm can be obtained by allowing Al 2 O 3 and/or ZrO 2 to contain in the SiO 2 -TiO 2 -XO oxides as in the sample No. 2211 and 2212 in TABLE 2008, sintering property is extremely decreased as shown in the samples NO. 2517 and 2518 in TABLE 2015 when Al 2 O 3 and ZrO 2 are added in an amounts of 15 parts by weight or more and 5 parts by weight or more, respectively, as in the samples No. 2517 and 2518 in TABLE 2015. Although powders prepared by the oxalic acid method are used in the foregoing examples, the methods are not limited thereto but a powder of barium titanate prepared by an alkoxide method or hydrothermal synthesis method may be used. It may happen that the characteristics of the monolithic ceramic capacitor are more improved than those shown in the foregoing examples by using these powders. The oxide powders as starting materials are not limited to those hitherto described, but the resulting characteristics are not affected in any sense by using a solution of an alkoxide or organometallic compound, provided that the starting materials are formulated so as to construct the dielectric ceramic layers within the scope of the present invention. It can be made clear from the foregoing descriptions that the dielectric ceramic composition according to the present invention is not reduced by firing in the reducing atmosphere along with not being formed into semiconductors, besides sintering is possible at a relatively low temperature of 1300 °C or less. Accordingly, when a monolithic ceramic capacitor is constructed by using this dielectric ceramic composition as dielectric ceramic layers, the production cost of the monolithic ceramic capacitor can be reduced since base metals such as nickel or nickel alloys may be used for the electrode materials. When the monolithic ceramic capacitor using this dielectric ceramic composition is used under a high electric field of 10 kV/mm where reliability can not be ensured due to low insulation resistance in the monolithic ceramic capacitor using nickel or nickel alloys for the conventional inner electrodes, a monolithic ceramic capacitor being excellent in weather resistance properties such as high temperature load at an impressed voltage of DC 25 kV/mm at 150 °C and humidity resistance load can be obtained, wherein the insulation resistances at room temperature and at 150 °C represented by a product of the insulation resistance and electrostatic capacitance (a CR product) becomes as high as 4900 to 5000 Ω·F and 190 to 200 Ω·F, respectively, the voltage dependency of the insulation resistance is low, the capacitance decrease ratio at an impressed voltage of 5 kV/mm is as small as 40 to 45% and the insulation durability is high, besides the temperature characteristics of the electrostatic capacitance satisfies the B-level characteristic standard stipulated in the JIS Standard and X7R-level characteristic standard stipulated in the EIA standard.

Claims: A dielectric ceramic obtainable from a composition comprising: barium titanate containing 0.02% by weight or less of alkali metal oxides, at least one of either scandium oxide or yttrium oxide, barium zirconate and manganese oxide, an essential component represented by the following composition formula: (BaO) m TiO 2 + αM 2 O 3 + βBaZrO 3 + γMnO, wherein M 2 O 3 represents at least one of either Sc 2 O 3 or Y 2 O 3 , and α, β and γ representing mole ratios are in the range of 0.001 ≤ α ≤ 0.06, 0.005 ≤ β ≤ 0.06 and 0.001 < γ ≤ 0.13 with 1.000 < m ≤ 1.035, and 0.2 to 3.0 parts by weight of either a first or a second side component relative to 100 parts by weight of said essential component, wherein said first side component is an oxide represented by Li 2 O-(Si, Ti)O 2 -MO wherein MO is at least one of Al 2 O 3 or ZrO 2 and said second side component is an oxide represented by SiO 2 -TiO 2 -XO, wherein XO is at least one of the compound selected from BaO, CaO, SrO, MgO, ZnO and MnO. A dielectric ceramic according to Claim 1, wherein said essential component further contains g mole ratio of magnesium oxide, where 0.001 < γ ≤ 0.12, 0.001 < g ≤ 0.12 and γ + g ≤ 0.13 A dielectric ceramic according to Claim 1 or 2, wherein said first side component, when its composition is represented by xLi 2 O-y(Si w Ti 1-w )O 2 -zMO, wherein x, y and z represent mol% and w is in the range of 0.30 ≤ w ≤ 1.00, falls within or on the boundary lines of an area surrounded by straight lines connecting six points (A, B, C, D, E, F) in a three component phase diagram defined by the apexes corresponding to each component, wherein a first point (A) is defined by x = 20, y = 80, z = 0, a second point (B) is defined by x = 10, y = 80, z = 10, a third point (C) is defined by x = 10, y = 70, z = 20, a fourth point (D) is defined by x = 35, y = 45, z = 20, a fifth point (E) is defined by x = 45, y = 45, z = 10 and a sixth point (D) is defined by x = 45, y = 55, z = 0, and wherein w is within the range of 0.3 ≤ w < 1.0, when the composition falls on the straight line connecting the said first and sixth points (A, F). A dielectric ceramic according to Claim 1 or 2, wherein said second side component, when its composition is represented by xSiO2-yTiO 2 -zXO, wherein x, y and z represent mol%, falls within or on the boundary lines of an area surrounded by straight lines connecting four points (A, B, C, D, E, F) in a three component phase diagram defined by the apexes corresponding to each component, wherein a first point (A) is defined by x = 85, y = 1, z = 14, a second point (B) is defined by x = 35, y = 51, z = 14, a third point (C) is defined by C x = 30, y = 20, z = 50 and , a fourth point (D) is defined by x = 39, y = 1, z = 60. A dielectric ceramic according to Claim 4, wherein the second side component contains in total of 15 parts by weight or less of at least one of Al 2 O 3 and ZrO 2 relative to 100 parts by weight of the oxide represented by SiO 2 -TiO 2 -XO, wherein the content of ZrO 2 is 5 parts by weight or less. A monolithic ceramic capacitor provided with a plurality of dielectric ceramic layers, inner electrodes formed between said ceramic layers and outer electrodes being electrically connected to said inner electrodes, wherein said dielectric ceramic layers are constructed by the dielectric ceramic according to any one of Claims 1 to 5 and said inner electrodes are constructed by nickel or a nickel alloy. A monolithic ceramic capacitor according to Claim 6, wherein the outer electrode is provided with a sintered layer of an electroconductive metal powder or an electroconductive metal powder supplemented with glass frits. A monolithic ceramic capacitor according to Claim 6, wherein the outer electrode is provided with a first layer comprising a sintered layer of the electroconductive metal powder or the electroconductive metal powder supplemented with glass frits and a second layer comprising a plating layer thereon. A monolithic ceramic capacitor according to Claim 7, wherein the outer electrode is provided with a first layer comprising a sintered layer of the electroconductive metal powder or the electroconductive metal powder supplemented with glass frits and a second layer comprising a plating layer thereon.

Inventors: MIZUNO SHINOBU, SAKAMOTO NORIHIKO, WADA NOBUYUKU, MIZUNO, SHINOBU, SAKAMOTO, NORIHIKO, WADA, NOBUYUKU
Applicants: MURATA MANUFACTURING CO, MURATA MANUFACTURING CO., LTD.
Application year: 1998
Main classification: C04B35
IPC codes: H01G4, H01B3, C04B35