ELECTROSTATIC ADHESION TESTER FOR THIN FILM CONDUCTORS

Abstract: An electrostatic adhesion tester for thin film conductors. In one embodiment, a device is provided for testing the adhesion strength of a thin film conductor that has been formed upon a substrate. The device includes an adhesion tester that is primarily comprised of a conducting portion. The conducting portion is applied to the thin film conductor so that it does not physically contact the thin film conductor, but leaves a small space therebetween. A power supply may further be provided for coupling to either the adhesion tester, the thin film conductor, or both in order to create a potential difference between the conducting portion and the thin film conductor. The potential difference creates an electric field between the conducting portion and the thin film conductor that induces stress in the thin film conductor. A measuring device may also be provided for coupling to the adhesion tester and the thin film conductor in order to measure an electrical parameter of the electric field, which is indicative of the adhesion strength.

Description: TITLE: ELECTROSTATIC ADHESION TESTER FOR THIN FILM CONDUCTORS BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to the field of adhesion testing and more particularly to a non-contact method for testing the adhesion of a thin film conductor and a variety of substrates. 2. Description of Related Art In the field of semiconductor fabrication, thin film metals are an important component in the fabrication of very large scale integration (VLSI) devices. These metal films are usually either deposited from a vapor phase or sputtered onto a substrate made of a different material. A typical application would be to deposit a thin film metal onto a dielectric layer to produce an interconnect level in a CMOS device. VLSI fabrication requires that thin film metals must meet several strict structural, chemical, and electrical requirements. A universal concern in the fabrication of VLSI devices is the ability to etch submicron features into the thin film materials. To facilitate these miniature etchings, the fabrication of the materials must be carefully controlled. The demands for narrow line widths and high densities in the production of VLSI devices create a critical requirement for very low densities of paniculate defects and film imperfections, such as pinholes. A result of these submicron etchings is that the underlying surface often becomes extremely rough. It is therefore necessary to have excellent adhesion between the underlying substrate and the overlaying thin film metal. The adhesion of thin film metals used in VLSI processing must be of the highest quality throughout the time it is being deposited and continuing thereafter. If at any time, the metal film lifts from the substrate, the device will almost certainly fail. Therefore, excellent adhesion is necessary to ensure the reliability of the device. Adhesion strength will rapidly become a critical metric within the microelectronics industry, particularly as material systems and devices become more complex. Various methods and techniques have been employed in the prior art to measure the adhesion strength of thin film metals on substrates. An early method of measuring adhesion involved pressing a piece of adhesive tape to tire surface of the film and then pulling the tape off. The tape and substrate were then examined to determine if any or all of the film was pulled away. This method was called the " tape test," and failure of this test obviously implied that the film was not suitable for device fabrication. The most significant disadvantage of this test was that attempts at measuring the adhesive strength of the thin films were only qualitative and produced a wide distribution of results. A second method that has been used in measuring adhesion strength is the "scratch" or "indentation method." This method produces results that depend both on the film hardness and on the adhesion quality of the thin film. To begin this process, pressure is applied, perpendicular to the film surface, to a chrome-steel point which is then moved horizontally across the film surface. The pressure on the point is increased until the point strips the film completely from the substrate. The groove from where the film was stripped is then observed with a microscope. The maximum pressure that was applied to the point is taken as a measure of the adhesion strength of the thm film An improvement over the tape test, the indentation method is nevertheless verv time consuming and requires that the adhesion strength be resolved from a combination of other measurements A third method previouslv used to measure the adhesion strength of thin film metals required a small pin to be epoxied to the surface of the film Then the surrounding thm film mateπal was removed from around the pin and epoxv Next, a force was applied to the pin that was perpendicular to the surface of the thin film metal until either the bond between the substrate and the thin film broke, or the epoxv bond between the thin film metal and the pm broke This method often produced results that were inconsistent The method also required a lengthv sample preparation and failed to produce anv meaningful data if the epoxv bond broke first Additionallv, selection of an appropπate epoxv was critical to prevent anv reaction with the thm film metal that mav have skewed the results The above methods of testing the adhesion strength of thm film metals have proven to encompass the disadvantages of lengthv sample preparation times and producing onlv qualitative results where the strengths must be resolved from other measurements It would thus be desirable to have an improved method of testing the adhesion strength of thm film metals SUMMARY OF THE INVENTION The problems outlined above are m large part solved bv an electrostatic adhesion tester for thin film conductors In one embodiment, a device is provided for testmg the adhesion strength of a thin film conductor that has been formed upon a substrate The device includes an adhesion tester that is pnmaπlv compπsed of a conducting portion The conducting portion is applied to the thin film conductor so that it does not phvsicallv contact the thin film conductor, but leaves a small space there between A power supplv mav further be provided for coupling to either the adhesion tester the thin film conductor, or both in order to create a potential difference between the conductmg portion and the thm film conductor The potential difference creates an electric field between the conductmg portion and the thin film conductor that induces stress m the thm film conductor A measuπng device mav also be provided for coupling to the adhesion tester and the thin film conductor in order to measure an electrical parameter of the electnc field which is indicative of the adhesion strength The adhesion tester mav further be configured to include one or more support portions that are connected to the conducting portion to accurately position the conducting portion m close proximity to the thm film conductor The power supply mentioned above is adjustable m order to ramp up the potential difference between the conducting portion and the thm film conductor Adjusting the potenUal difference controls the electric field between the conducting portion and the thm film conductor and allows the electnc field to be increased to the point where the thm film conductor peels avvav from the substrate and contacts the conductmg portion A measuπng device mav be connected to the thm film conductor and the conductmg portion to detect the electπcal parameter immediately before the thin film conductor contacts the conductmg portion Altemativelv, the measuπng device mav be configured to detect the occurrence of a significant rate of change in the electπcal parameter Tvpicallv, both the adhesion tester and the substrate compnsing thm film conductor are placed in a vacuum chamber m order to prevent arcing Still further the present invention contemplates a method of testing the adhesion strength of a thm film conductor that is formed on a substrate This method compπses the stφ of forming a capacitor bv placing a conductmg portion of an adhesion tester in close proximity to the thm film conductor without phvsicallv contacting the thm film conductor A potential difference is then created between the conductmg portion and the thin film conductor in order to create a corresponding electnc field between the conductmg portion and the thm film conductor An electncal parameter of the capacitor is then measured where the electncal parameter is indicative of the adhesion strength of the thm film conductor The present invention still further contemplates a svstem for testmg the adhesion strength of a thin film conductor formed on a substrate The svstem mcludes an adhesion tester, a power supply, and a measuπng device The adhesion tester includes a conductmg portion adapted not to physically contact said thm film conductor when the adhesion tester is applied to said thm film conductor The power supply is adapted for coupling to the adhesion tester or the thm film conductor and is capable of creating a potential difference between said conductmg portion and said thm film conductor The potential difference creates an electnc field between the conducting portion and the thm film conductor The electnc field mduces stress in the thm film conductor The measunng device is adapted for coupling to the adhesion tester or the thm film conductor for measunng an electncal parameter of said electnc field The electncal parameter is indicative of said adhesion strength Similarly the present invention contemplates a method of testing the adhesion strength of a thm film conductor formed on a substrate compnsing the steps of forming a capacitor creating a potential difference between a conductmg portion of the capacitor and the thm film conductor, and measunng an electncal parameter of the capacitor indicative of the adhesion strength of the thm film conductor Formation of the capacitor is achieved bv placing a conductmg portion of an adhesion tester in close proximity to said thin film conductor wherein said conductmg portion does not physically contact said thm film conductor The potenUal difference creates an electnc field between said conducting portion and said thin film conductor \\ herein said electnc field induces stress m said thm film conductor BRIEF DESCRIPTION OF THE DRAWINGS Other ob)ects and advantages of the invenUon will become apparent upon reading the following detailed description and upon reference to the accompanying drawings m which Fig 1 is a diagram of electrostatic stresses between two parallel conductor plates Fig 2 is a schematic diagram of an electrostatic adhesion tester Fig 3 is a flow diagram of a method of testmg an adhesion strength Fig 4 is a graph of the Weibull distnbution of adhesion strengths from three metallizations Fig. 5 is a table of the characteristic strengths and Weibull modulus of the tested films: Fig. 6 A is a top view of micro-blister adhesion failure: and Fig. 6B is a cross section of one of the micro-blisters in 3 A. While the invention is suscφtible to various modifications and alternative forms, specific embodiments thereof are shown by way of example in the drawings and will herein be described in detail. It should be understood, however, that the drawing and detailed description thereto are not intended to limit the invention to the particular form disclosed, but on the contrary, the intention is to cover all modifications, equivalents and alternatives falling within the spirit and scope of the present invention as defined by the appended claims. DETAILED DESCRIPTION OF THE INVENTION Referring now to Fig. 1 , a schematic diagram of the electrostatic stresses between two parallel conductor plates in accordance with one embodiment of the present invention is shown. The principle of this technique is the use of a quantifiable normal tensile force generated by an electrostatic field to delaminate thin film metallizations from their semiconductor substrates. Fig. 1 shows a system 100 for testing the adhesion strength of a thin film metal 102 that is formed on a substrate 104. The thin film metal 102 is coupled to the conducting portion 110 of an adhesion tester 101 by a power supply 120. Power supply 120 is preferably adjustable, and adapted to create a positive charge on the conducting portion 110. The thin film metal 102 may be either negatively charged or grounded. The model for this system is the simple parallel plate capacitor. For a conducting portion 110 with a uniform surface charge density p facing a thin film metal 102. which is grounded, according to Gauss ' s law one can calculate the electric field 160 in the intervening medium as being equal to the surface charge density divided by the product of the permittivity of vacuum and the dielectric constant of the material sφarating the conducting portion 110 and the thin film metal 102. The dielectric sφarating the conducting portion and the thin film metal in this particular embodiment is air. which has a relative permittivity of 1.00059. The electric field 160 may further be defined as the resultant electrostatic force per unit positive charge. The electrostatic forces 130 generated on the surfaces of the conducting portion 110 and the thin film metal 102 are normal to the surfaces, hence, the electric field 160 can be rφresented in a scalar relationship E = F/q. Considering the charge density p = q/A and the mechanical stress σ = F/A, the electrostatic field 130 can be further expressed as E = σ/p. The relationship between the mechanical stress σ and field E can be rφresented as σ = K ε 0 E . The electric field 160 in the special case of parallel plate geometry can be simply expressed as the potential or applied voltage V. divided by the plate sφaration distance, d. Generally speaking, for the case of adhesion testing, the medium is a vacuum which has a permittivity of ε 0 = 8.85 x 10 C Nm . Hence, the electrostatic stress 130 can be expressed in terms of only an applied voltage and a sφaration distance as σ(MPa) = 8.85 [(V(kV))/(d(μm))f . It should be noted that the preceding discussion applies not onlv for metal films dφosited on a substrate but also for other thm conductive films as well In particular, the adhesion strength of a dielectnc film can also be tested using the invention if the dielectnc matenal is exposed to an electnc field that causes it to undergo dielectnc breakdown Under this condition the dielectnc film becomes conductive and the above expression for electrostatic stress can be used to determine the electrostatic stress on the dielectnc film The feasibility of this technique relies on attaining adequately high values of E and hence σ To generate stresses of up to 100 Mpa in the metallizations the electnc field 160 should preferably be on the order of approximately 10 V/m The measuπng device 140 is used to measure an electncal parameter of the electnc field 160 The simplest measurement to record is the potential difference between the conducting portion 110 and the thin film metal 102 To generate a stress as high as 100 Mpa usmg a power supply with a maximum output of about lOkV, the separation distance between the conductmg portion 110 and the thm film metal 102 should preferablv be on the order of microns Hence, it is typically more practical to control the electnc field b\ adjusting the relatively large voltage rather than the relatively small gap Fig 2 is a schematic diagram of an embodiment of an electrostatic adhesion test svstem 1 0 Test svstem 100 mcludes an adhesion test 101 a power supplv 120 and a measuπng device 140 Adhesion tester 101 mcludes two ceramic supports 210 connected to the conducting portion 110 The conductmg portion 110 is tvptcallv compπsed of copper and is approximately 0 65mm thick m one embodiment The adhesion tester 101, consisting of the two ceramic supports 210 and the copper conductmg portion 110 there between, is applied to the thm film metal 102 such that the ceramic supports 210 are in contact with thin film metal 102 In one presently preferred embodiment, the contact surfaces of the ceramic supports 210 are compπsed of finely polished μm alumma Ceramic supports 210 hold the conducting portion 110 in such a wav as to prevent conductmg portion 110 from contacting thm film metal 102 The conductmg portion 1 10 is held m close proximitv to thin film metal 102 creating a gap between the two of approximately 2 μm This gap mav suitably be filled with a vaπetv of dielectrics including air Suitable dimensions of ceramic supports 210 and the copper conductmg portion are approximately 7 x 10 8 mm An alternate method (not shown) of applying conductmg portion 110 to thin film metal 102 is to connect conducting portion 110 to a mechanical arm that positions the surface of the conductmg portion 110 parallel to the surface of the thin film metal 102 The mechanical arm could thereby leave a small gap of approximately 2 μm between the two surfaces without the need of anv support portions such as those shown in Fig 2 To prevent arcing, the device is placed in a vacuum chamber 150 In one embodiment a diffusion pump backed up by a mechanical pump provides a vacuum of 10 " torr which is adequate for the proper operation of the device A cold trap may be used to dimmish oil contamination of the sample Also the edges of the copper conducting portion 110 may be gently rounded to further prevent arcmg The potenUal difference between the conducting portion 110 and the thin film metal 102 mav be provided bv applying a voltage from a power supplv 120 In the preferred embodiment power supph 120 includes a voltage source 222 in senes with a resistor 220 An exemplary power supply is a Sorensen-5 voltage source whose maximum voltage is 12 kV at a cuπent of 50 mA The measunng device 140 is mtended to measure an electrical parameter of the electric field between the conducting portion 110 and the thin film metal 102. For example, measuring device 140 could measure the capacitance or the potential difference between the two surfaces. The simplest measurement to record is the potential difference or voltage. An exemplary device to measure the exact applied voltage from the power supply 120 is a BK Precision multimeter (Model: 2835 DMM). The resistor 220 used in this invention is typically a 50 Ω resistor. In testing a specimen, the electric field is raised gradually by increasing the voltage until a short is noticed. This is the point at which the thin film metal 102 contacts the conducting portion 110. The voltage at failure is read on the voltmeter and used to determine the delamination stress of the thin film metal 110. Between sets of experiments, the adhesion tester 101 is cleaned and polished to prevent particle accumulation. Changes in the gap between the conducting portion 110 and the thin film metal 102 are measured by scanning electron microscopy and incorporated into the necessary calculations. Generally speaking, gaps from 1.2 to 4 μm are utilized. In Fig. 3, a flow diagram for one embodiment of a method for testing the adhesion strength of a thin film metal is disclosed. Initially, a capacitor is formed as indicated by reference numeral 310. The formation of the capacitor is accomplished by placing a conducting portion of the adhesion tester in close proximity to the thin film metal without contacting the conducting portion to the thin film metal. In a presently prefened embodiment, a gap between the conducting portion and the thin film metal is suitably in the range of approximately 1 to 4 microns. After the capacitor has been formed, a potential difference between the plates of the capacitor is created as indicated in reference numeral 320 of Fig. 3. The potential difference between the plates of the capacitor creates an electrical field that induces stress in the thin film metal. After the potential difference has been created, an electrical parameter of the capacitor is measured. The electrical parameter chosen for measurement is indicative of the adhesion strength of the thin film metal. The measurement of the electrical parameter is indicated in Fig. 3 by reference numeral 330. In one embodiment, the adhesion tester includes one or more support structures coupled to the conducting portion to facilitate placing the conducting portion in close proximity to the thin film metal without touching the thin film metal. In one embodiment, the method further includes the step (not shown in Fig. 3) of adjusting the potential difference between the conducting portion and the thin film metal during the measuring. In this manner, the electrical field between the conducting portion and the thin film metal may be controlled during the measurement portion of the method. In one embodiment, the adjusting involves increasing the potential difference until the thin film metal contacts the conducting portion of the adhesion tester. In this embodiment, the measuring preferably determines a value of the electrical parameter immediately prior to a point when the thin film metal contacts the conductive portion. It is contemplated in this embodiment that the increasing electrical field caused by the increasing potential difference ultimately induces enough stress in the thin film metal to displace the thin film metal from the underlying substrate and, ultimately, forces the thin film metal into contact with the conducting portion of the adhesion tester. In one embodiment, it is contemplated that the potential difference between the conducting portion and the thin film metal results in a first rate of change in the electrical parameter during a first duration. During a second duration, the measuring detects a second rate of change typically greater than the first rate of change. In this embodiment, the measuring determines the value of the electrical parameter immediately after the first duration. In this embodiment, it is contemplated that, prior to the point at which the thin film metal delaminates, a rate of change in the measured electrical parameter whether it be potential difference, capacitance, capacitor current, or some other appropriate parameter, will be significantly different than the rate of change of the particular parameter after the delamination of the metal and. more particularly, after the point at which the thin film metal contacts the conducting portion of the adhesion tester. It is contemplated that one embodiment of the present invention may be designed to measure the rate of change of a desired electrical parameter rather than measuring and rφorting the electrical parameter directly. In one embodiment, creating the potential difference is accomplished by applying a voltage to the conducting portion, the thin film metal, or both. The voltage creates an electric field between the conducting portion and the thin film metal that induces a stress in the thin film metal. The creation of the potential difference is preferably accomplished in a presently preferred embodiment by connecting a power supply across the thin film metal and the conducting portion of the adhesion tester. In a prefened embodiment, the adhesion tester and the substrate are placed in a vacuum chamber prior to performing the adhesion test to prevent arcing. In one embodiment, the electrical parameter is measured at a predetermined time interval after the potential difference is created. In this embodiment, it is envisioned that a pass fail test may be performed by simply measuring an electrical parameter at a specified time interval and, if the measured parameter is within specification, the thin film is designated to have adequate adhesion to the substrate. In alternative embodiments, the electrical parameter may be the potential difference between the conducting portion and the thin film metal or a capacitance of the capacitor comprising the conducting portion and the thin film metal. In a presently prefened embodiment the potential difference is in the range of approximately 1 kV to 12 kV. Fig. 4 is a plot of the Weibull distribution of adhesion strengths from the following metallizations: aluminum-copper (2%) alloy, unalloyed copper, and an aluminum silica multilayer. The three metallizations were 1 μm thick and had been dc magnetron sputtered onto a partially oxidized single-crystal silicon substrate. The electrostatic adhesion test system typically measures adhesion strengths that exhibit considerable scatter and should consequently be subjected to Weibull statistical analysis. Taking the natural logs of the Weibull distribution function (σ 0 = 0) twice gives In ln[ l/( 1 -Pf(V))l = m In (σ/σ 0 ) with σ 0 being the characteristic stress defined as the stress at which 63% of the population has failed. In the previous equation, m is the Weibull modulus indicative of flaw-sensitivity. Thus a plot of the left-hand side of the equation against ln(σ) is a straight line. The slope of the line is m and the x -intercφt is ln(σ 0 ). The Weibull plots in Fig. 3 point to a linear relationship, indicating that the Weibull statistics can be applied to the adhesion strengths analysis. Fig. 5 lists the characteristic strength. σ 0 , and the Weibull modulus, m. for each of the metallizations. It is seen from this Fig. that the Al-Cu(2%) alloy metallization has a higher characteristic adhesion strength than the other two metallizations. The Al multilayer film has the lowest characteristic strength. At the same time, the Weibull modulus of the Al-Cu(2%) metallization is larger than those of copper and of the Al- multilayer. Thus, there is less scattering of the delamination stress in the Al-Cu(2%) metallization than that in the other two metallizations. Figs. 6A and 6B illustrate the delamination of a thin film metal 102 as it occurs through blister formation. The blister 602 may be viewed with the use of a field-emission scanning electron microscope (FE- SEM). The size of the blisters 602 are typically about 15 μm in diameter. The electrostatic forces 604 cause the central part of the blister 602 to rupture, and thus make contact with the conducting portion 110 of the adhesion tester 101. Fig. 6B also shows the blister 602 growing under the electrostatic field. The delamination and rupture of a thin film metal 102 occurs as a result of the electrostatic field gradually increasing. This increase in the electrostatic field causes the normal stress to lift the film 102 from its substrate 104 at an interfacial flaw, which provides a potential delamination site. When the critical delamination stress is reached, a region at the flaw is detached forming a blister 602. The blister 602 will grow spontaneously, without the need of a field stress greater than the critical delamination stress. The meridional tensile stresses in the film will also rise. When these stresses reach the fracture strength of the film 102, parts of the film 102 are delaminated and touch the conducting portion 110 of the adhesion tester 101. thus creating a short. The delamination flaws at the interface could be voids, interface contaminations, grain boundaries, or interfacial chemical reactants. If more than two kinds of flaws were active in initiating fractures, the measured data would fall on a non-linear relationship in the Weibull plots. A "knee" would appear between linear portions of the graph with different slopes. However, all of the plots in Fig. 4 show a clearly linear relationship. For the blisters 602 shown in Figs. 6 A and 6B. the stresses reach a maximum at the center of the blister. For a typical aluminum film blister, the tensile stress is calculated to be approximately 83 MPa. This stress is higher than the rupture strength of 55MPa, which is measured from blister testing of free standing Al(l%)Si film of the same thickness. For comparison, the ultimate tensile strength of bulk aluminum (1100) is 89 MPa. The thin film metal 102 is ruptured when the tensile stress at the center of the blister 602 reaches the fracture strength of the material. The ruptured film then creates a short by touching the conducting portion 110 of the adhesion tester 101. The lower limit of the central height of a typical blister 602 is 0.34 μm. Likewise, the upper limit of the central height of a typical blister 602 is 1 μm. Because the blister growth in adhesion testing is a much faster process than that in a bulge test, the fracture strain is expected to be smaller than that in a bulge test and. hence, the central height of a blister will be smaller than the calculated value. As mentioned above, measuring the potential difference between the conducting portion 110 and the thin film metal 102 is the preferred method of determining the adhesion strength of the thin film metal 102. However, alternate methods may be used. One of the alternate methods is to use measuring device 140 to determine when the electric field between the conducting portion 110 and the thin film metal 102 undergoes a significant rate of change. The increase in the rate of change of the electric field is easily detected because the time from when the thin film metal 102 first begins to blister to the point where it expands and contacts the conducting portion 110 is extremely short and in the order of micro seconds. This is much different from the slow and predictable rate of change that results from the power supply being steadily ramped up to the point where the short circuit is noticed. Therefore, it is quite easy to differentiate between the two rates of change and the measuring device could be designed accordingly. Another alternate method of determining the adhesion strength between the thin film metal 102 and the substrate 104 is to create a pre-determined potential difference between the conducting portion 110 and the thin film metal 102 for a pre-determined period of time, and then visually inspect the sample to determine if any delamination in the form of blistering occurred. In other words, if the sample is subjected to a predetermined level of stress from an electric field, and no delamination occurs, then the adhesion strength could be considered adequate, having passed a threshold test. It will be appreciated by those skilled in the art that the present invention and the preferred embodiment of the invention described herein are useful in obtaining quantitative information regarding the adhesion strengths of thin film metals. Various modifications and changes may be made to each and every element of the methods and apparatus described as would be obvious to a person skilled in the art having the benefit of this disclosure. It is intended that the following claims be interpreted to embrace all such modifications and changes and, accordingly, the specification and drawings are to be regarded in an illustrative rather than a restrictive sense.

Claims: WHAT IS CLAIMED: 1 A method of testmg the adhesion strength of a thm film conductor formed on a substrate, compnsing the stφs of forming a capacitor bv placing a conductmg portion of an adhesion tester in close proximity to sad thm film conductor wherem said conductmg portion does not physically contact said th film conductor creating a potential difference between said conducting portion and said thin film conductor wherein said potential difference creates an electnc field between said conductmg portion and said thm film conductor wherem said electnc field mduces stress in said thm film conductor and measunng an electncal parameter of said capacitor wherem said electπcal parameter is indicative of said adhesion strength 2 The method of claim 1 wherem said adhesion tester further compnses one or more support portions coupled to said conductmg portion, wherein said placmg said conducting portion compnses applying said adhesion tester to said thin film conductor wherem said one or more support portions contact said thm film conductor 3 The method of claim 1 further compnsmg adjusting said potential difference between said conducting portion and said thin film conductor dunng said measunng, to control said electnc field created between said conducting portion and said thm film conductor 4 The method of claim 3 wherem said adjustmg said potential difference between said conductmg portion and said thin film conductor compnses mcreasing said potential difference until said thin film conductor contacts said conducting portion The method of claim 4 wherem said measunng determines a value of said electncal parameter immediately pnor to a point where said thin film conductor contacts said conducting portion 6 The method of claim 3 wherem said adjustmg said potential difference between said conductmg portion and said thin film conductor results in a first rate of change m said electπcal parameter dunng a first duration further wherein said measuπng detects a second rate of change dunng a second duration wherein said second rate of change is greater than said first rate of change and further wherein said measunng further determines said electncal parameter immediately after the first duration 7 The method of claim 1 wherem said creating a potential difference compπses applymg a voltage to at least one of said conducting portion and said thin film conductor wherem said voltage creates an electnc field between said conductmg portion and said thm film conductor wherem said electnc field mduces stress in said thm film conductor 8 The method of claim 7, wherem said creating a potential difference between said conductmg portion and said thm film conductor compπses connecting a power supply to said conductmg portion and to said thm film conductor 9 The method of claim 1 further compπsmg 10 placmg said substrate in a vacuum chamber, wherem said stφs of placmg an adhesion tester creating a potential difference and measuπng said electncal parameter are performed in said vacuum chamber to prevent arcing 1 The method of claim 1 wherem said electnc field mduces thm film conductor delamination wherein said measuπng an electπcal parameter is performed at a pre-determined time interval after said creaung 11 The method of claim 1 wherem said electncal parameter is a potenUal difference between said conductmg portion and said thm film conductor 12 The method of claim 1 wherem said electncal parameter is a capacitance between said conducting portion and said thin film conductor 13 The method of claim 1 wherem said measunng compnses measunng a rate of change of said electncal parameter 14 The method of claim 1 wherem after said applying said conducung portion and said thm film conductor are separated bv a dielectnc 15 The method of claim 14 wherem said dielectnc is air 16 The method of claim 1 wherein said potential difference is in the range of lkV to 12kV 17 The method of claim 1 wherein, after said applvmg, said first and second plates are separated bv a distance ranging from 1 2 to 4 micrometers 18 A method of testmg the adhesion strength of a thm film conductor formed on a substrate, compnsing the stφs of forming a capacitor by placing a conductmg portion of an adhesion tester in close proximity to said thm film conductor wherem said conducting portion does not physically contact said thin film conductor creating a potential difference between said conductmg portion and said thm film conductor wherein said potential difference creates an electnc field between said conductmg portion and said thm film conductor wherem said electnc field mduces stress in said thm film conductor and determining a condition of said thin film conductor after said creating wherem said condition of said thm film conductor is indicative of said adhesion strength 19 The method of claim 18, wherem said creating said potential difference compπses applvmg said potential difference for a pre-determined penod of time 20 A method of testmg the adhesion strength of a thin film conductor formed on a substrate compnsing the stφs of applying an adhesion tester to said thin film conductor wherein said adhesion tester compπses a conductmg portion coupled to one or more support portions wherem said one or more support portions contact said thin film conductor wherein said conductmg portion does not physically contact said thin film conductor creating a potential difference between said conducting portion and said thm film conductor wherein said potential difference creates an electnc field between said conductmg portion and said thm film conductor wherem said electnc field mduces stress in said thm film conductor and measunng an electπcal parameter of said electnc field wherein said electncal parameter is indicative of said adhesion strength 21 A svstem for testmg the adhesion strength of a thin film conductor wherein said thm film conductor is formed on a substrate, the svstem compnsing an adhesion tester comprising a conducting portion, wherein said conducting portion is adapted to not physically contact said thin film conductor when said adhesion tester is applied to said thin film conductor; a power supply adapted for coupling to at least one of said adhesion tester and said thin film conductor for creating a potential difference between said conducting portion and said thin film conductor, wherein said potential difference creates an electric field between said conducting portion and said thin film conductor, wherein said electric field induces stress in said thin film conductor: and a measuring device adapted for coupling to at least one of said adhesion tester and said thin film conductor for measuring an electrical parameter of said electric field, wherein said electrical parameter is indicative of said adhesion strength. 22. The system of claim 21. wherein said adhesion tester further comprises one or more support portions coupled to said conducting portion, wherein said one or more support portions contact said thin film conductor formed on said substrate when said adhesion tester is applied to said thin film conductor. 23. The system of claim 21 , wherein said power supply is adjustable. 24. The system of claim 23. wherein said power supply is operable to increase said potential difference between said conducting portion and said thin film conductor until said thin film conductor contacts said conducting portion; and wherein said measuring device detects said electrical parameter immediately prior to when said thin film conductor contacts said conducting portion. 25. The system of claim 23, wherein said power supply is operable to adjust said potential difference between said conducting portion and said thin film conductor to produce a first rate of change in said electrical parameter during a first duration: and further wherein said measuring device detects a second rate of change during a second duration, wherein said second rate of change is greater than said first rate of change; and further wherein said measuring device is configured to determine said electrical parameter immediately prior to occurrence of said second rate of change. 26. The system of claim 21. wherein said conducting portion operates as a first plate of a capacitor, wherein said thin film conductor operates as a second plate of said capacitor: ι 3 wherem said power supply operates to create a potential difference between said first and second plates of said capacitor, wherein said potential difference creates an electnc field between said first and second plates and wherem said measuπng operates to measure an electπcal parameter of said capacitor wherein said electncal parameter is indicative of said adhesion strength 27 The svstem of claim 21 herem said power supply is operable to apply a voltage to at least one of said conductmg portion and said thm film conductor, wherem said voltage creates an electnc field between said conductmg portion and said thm film conductor, wherem said electnc field mduces stress in said thm film conductor 28 The svstem of claim 21 , further compnsing a vacuum chamber configured to receive said substrate wherem said adhesion tester is positioned m said vacuum chamber when said adhesion tester is applied to said thm film conductor and wherem said measunng device operates to measure said electπcal parameter of said electnc field in said vacuum chamber m order to prevent arcing 29 The svstem of claim 21 wherem said electnc field mduces thm film conductor delamination wherein said measuπng device operates to measure said electπcal parameter at a time after said potential difference creates said electnc field 30 The svstem of claim 21 , wherem said electncal parameter is a potential difference between said conductmg portion and said thm film conductor 31 The system of claim 21 wherem said electπcal parameter is a capacitance between said conducting portion and said thm film conductor 32 The svstem of claim 21 wherem said measuπng device measures a rate of change of said electncal parameter 33 The system of claim 21 further compnsmg a dielectnc positioned between said conducting portion and said thin film conductor ι 4 34. The system of claim 33, wherein said dielectric is air. 35. The system of claim 21 wherein said potential difference is in the range of lkV to 12kV. 36. A system for testing the adhesion strength of a thin film conductor, wherein said thin film conductor is formed on a substrate, the system comprising: an adhesion tester, comprising: one or more support portions; a conducting portion connected to said one or more support portions; wherein said one or more support portions are adapted to contact said thin film conductor when said adhesion tester is applied to said thin film conductor; wherein said conducting portion is adapted to not physically contact said thin film conductor when said adhesion tester is applied to said thin film conductor; wherein, when said adhesion tester is applied to said thin film conductor, said conducting portion operates as a first plate of a capacitor and said thin film conductor operates as a second plate of said capacitor; a power supply adapted for coupling to said adhesion tester and said thin film conductor for creating a potential difference between said first and second plates of said capacitor, wherein said potential difference creates an electric field between said first and second plates, wherein said electric field induces stress in said thin film conductor; and a measuring device adapted for coupling to at least one of said adhesion tester and said thin film conductor for measuring an electrical parameter of said capacitor, wherein said electrical parameter is indicative of said adhesion strength.

Inventors: BROTZEN FRANZ R, CALLAHAN DANIEL L, GRIFFIN ALFRED J JR, YANG HAINING S, BROTZEN, FRANZ, R., CALLAHAN, DANIEL, L., GRIFFIN, ALFRED, J., JR., YANG, HAINING, S.
Applicants: RICE UNIVERSITY
Application year: 1998
Main classification: G01N19
IPC codes: G01N3, G01N19