MOS image sensor

Abstract: An image sensor circuit employs a photodiode (103/101) in conjunction with a charge transfer mechanism. By employing the photodiode, at least a portion of the light sensed does not pass through a layer of polysilicon (109), and so is not prevented from reaching the sensing area by the polysilicon. The image sensor circuit of the invention is made up of device structures readily available in standard CMOS process technologies. Advantageously, image sensors embodying the invention show substantially improved quantum efficiency for short wavelength light over the prior art sensors. In addition, image sensors embodying the invention display improved dark current uniformity, thus improving yield.

Description: This invention relates to image sensor circuits and to methods for operating an image sensor circuit. A well known problem in the art of photogate CMOS and CCD image sensors is that of reduced short wavelength optical response. More specifically, one photogate circuit disclosed in United States Patent No. 5,576,763, issued to Ackland, et al. on Nov. 19, 1996 achieves very low read noise. As disclosed, the main photosensitive region of the photogate circuit is the depletion region under the photogate and the region that is within the minority carrier diffusion length of the edge of that depletion region. The photogate is made large in area so as to maximize the number of collected electrons. However, the photogate sensor circuit suffers from poor quantum efficiency for short wavelength light due to the absorption characteristics of the polysilicon gate material employed. This problem is aggravated by the use of silicided gates which are used in many current CMOS fabrication processes. Photogate CCD image sensors, e.g. frame transfer CCD's, also suffer from this problem. Photodiode-based image sensors have a better short wavelength optical response properties. However, CMOS photodiode-based image sensors suffer from a problem with reset noise. Specifically, it is impractical to save the actual reset value for the sensor, which is subtracted from the sensor output to eliminate the effect of reset noise from the sensor output. Therefore, a simulated reset value for a sensing cycle is developed using the output of the sensor after it is reset for the next sensing cycle. However, such simulated reset values may not accurately represent the actual reset value for the sensing cycle in which they are used, resulting in a poorer image quality. Mikio Kyomasu: 'A new MOS imager using photodiode as current source' IEEE Journal of Solid-State Circuit, vol. 26, no. 8, pages 1116-1122 (XP000258579), and US-A-5,742,047, each discloses an imager that uses a capacitor to directly collect photoresponsive charge from a photodiode. US-A-4,287,441 shows the use of a double correlated sampling technique. According to one aspect of this invention there is provided an image sensor circuit as claimed in claim 1. According to another aspect of this invention there is provided a method as claimed in claim 19. The problems with prior image sensors are ameliorated by an image sensor circuit which employs a photodiode in conjunction with a charge transfer mechanism in lieu of the prior art photogate light sensor. By employing the photodiode, at least a portion of the light sensed does not pass through a layer of polysilicon, and so is not prevented from reaching the sensing area by the polysilicon. The image sensor circuit of the invention is made up of device structures readily available in standard CMOS process technologies. Advantageously, image sensors embodying the invention show substantially improved quantum efficiency for short wavelength light over the prior art sensors. In addition, image sensors embodying the invention display improved dark current uniformity, thus improving yield. Further advantageously, image sensors of the present invention have lower reset noise than prior art CMOS photodiode image sensors. Brief Description of the Drawing In the drawing: FIG. 1 shows an exemplary embodiment of an image sensor circuit which employs a photodiode in conjunction with a charge transfer mechanism and is compatible with CMOS manufacturing processes, embodying the invention; FIGs. 2-5 show various possible arrangements for laying out the sensor on a silicon integrated circuit; and FIG. 6 shows a circuit schematic representation of the sensor Detailed Description FIG. 1 shows an exemplary embodiment of an image sensor circuit which employs a photodiode in conjunction with a charge transfer mechanism and is compatible with CMOS manufacturing processes, embodying the invention. The image sensor circuit shown in FIG. 1 includes p-substrate 101, n+ regions 103 and 105, silicon dioxide (SiO2) layer 107, polysilicon layer 109, transistors 111 and 113, amplifier 115, and parasitic capacitor 117. The boundary of n+ region 105 with p-substrate 101 forms photodiode D1 while the boundary of n+ region 103 with p-substrate 101 forms photodiode D2. Polysilicon layer 109, SiO2 layer 107, and p-substrate 101 form a gate, which need not be a photogate, of NMOS transistor 121 which is formed by n+ region 103, n+ region 105, p-substrate 101, SiO2 layer 107, and polysilicon layer 109. Operation of the circuit shown in FIG. 1 is as follows. The light to be sensed falls on photodiodes D1 or D2. In such photodiodes, the photosensitive regions comprise the depletion region and the region that is within one minority carrier diffusion length of the edge of that depletion region. D2, along with D1, form photosensitive regions that have high quantum efficiency in the short wavelength region of the visible spectrum. Gate terminal 119 of transistor 121 is held high, allowing incident light to produce electron-hole pairs in the depletion region underneath photodiodes D1 and D2 and gate SiO2 layer 107. The generated electrons are collected and stored underneath the gate for a period of time, e.g., 30 milliseconds. During this time, electrons from n+ region 103 will occupy most of the interface states in the interface formed by p-substrate 101 and SiO2 layer 107 underneath the gate of transistor 121. This results in a reduced thermal carrier generation and hence reduced dark current. Furthermore, the reduced dark current results in a higher pixel yield. At the end of the collection time period, in order to read out the sensor, terminal 123 of transistor 113 is pulsed high momentarily, in order to reset the voltage at node 125. The reset value seen at the output of amplifier 115 is stored by sample-and-hold circuit 127. Gate terminal 119 of transistor 121 is then forced low momentarily, causing the charge stored under gate SiO2 layer 107 to be transferred to node 125. This occurs by operation of transistor 111 as a common gate amplifier. To this end, gate terminal 139 of transistor 111 is biased to a substantially fixed voltage, such as in the range of 0-3 volts, e.g., 1 volt. The transferred charge is stored in parasitic capacitor 117, which converts the charge into a voltage. Parasitic capacitor 117 is small in comparison to the total capacitance of diodes D1, D2 and transistor 121. Advantageously, when the charge is transferred to parasitic capacitor, a larger voltage change is developed than if parasitic capacitor 117 had the same capacitance value as the total capacitance of diodes D1, D2 and transistor 121. This voltage "gain" reduces the effect of random noise in the readout circuits, which include amplifier 115 and all circuits subsequent to the output thereof. The voltage developed at node 125 is then amplified by amplifier 115, and the amplified voltage is stored in a second sample-and-hold circuit 129. The difference between the outputs of sample-and-hold circuits 127 and 129, Vsig, is the output of the circuit. This output difference is an example of correlated double sampling, by which, advantageously, in this instance, a) the effects of reset noise, b) the effects of threshold voltage variations in transistor 113, c) offset variations in amplifier 115, and d) switching feedthrough in transistor 113 during the reset operation are canceled by the difference operation. FIGs. 2-5 show various possible arrangements for laying out the sensor on a silicon integrated circuit. The legend for the various layers that implement the sensor are shown in each of the FIGs. Elements having the same number as an element in FIG. 1 correspond to the same element. In FIGs. 2-5 amplifier 115 has been implemented by transistor 235 and a selection control transistor 237 has been added to selectively address the output of the sensor. Note that n+ region 105 can be merged into n+ region 103 to form a single photodiode region, as shown in FIGs. 3 and 5. For convenience, FIG. 6 shows a circuit schematic representation of the sensor. Again, elements having the same number as an element in FIG. 1 correspond to the same element. It is noted that amplifier 115 serves to isolate capacitor 117 from the line capacitance and the capacitance of sample and hold circuits 127 and 129. Those of ordinary skill in the art will readily recognize how to implement the invention using PMOS transistors and/or p+ to n photodiodes. It will also be recognized that any insulating material may be used in lieu of silicon dioxide. Note that only one photodiode need be employed. If so, the diode employed will be D1 formed by the junction of n+ region 105 (FIG. 1) and p-substrate 101. If such a circuit is employed, transistor 121 although seeming to lack a source, because of the absence of n+ region 103, can still be thought of a transistor with its drain and source short circuited. In any event, the charge collection and transfer operation will be the same as described above. Although transistor 113 has been shown as an NMOS transistor, it will be recognized that a PMOS transistor can give an improved reset, as it can pull the voltage at the drain of the transistor higher than a corresponding NMOS transistor can pull its source. The foregoing merely illustrates the invention. It will thus be appreciated that those skilled in the art will be able to devise various arrangements which, although not explicitly described or shown herein, embody the invention and are included within its scope, which is defined by the claims.

Claims: An image sensor circuit, including: a first photodiode [105], having first and second terminals; a first metal oxide semiconductor (MOS) transistor [121], a drain of said MOS transistor being coupled to said first terminal of said first photodiode for collecting charge developed by light falling on said first photodiode; a second MOS transistor [111], a source of said second MOS transistor being coupled to said first terminal of said first photodiode and to said drain of said first MOS transistor; a capacitor [117], one terminal of said capacitor being coupled to a drain of said second transistor; and a third MOS transistor [113], said source of said third MOS transistor being coupled to said drain of said second transistor; wherein said charge collected in said first MOS transistor is transferred through said second MOS transistor and converted into a voltage by said capacitor. An image sensor circuit as claimed in claim 1 wherein charge transference occurs when a signal is applied to a gate of said first MOS transistor so as to substantially eliminate its inversion layer. An image sensor circuit as claimed in claim 1 or 2 wherein said second MOS transistor is configured as a common gate transistor. An image sensor circuit as claimed in claim 1, 2, or 3 wherein said sensor is resetable by application of a signal to turn said third MOS transistor on. An image sensor circuit as claimed in claim 1, 2, 3, or 4 wherein said circuit is manufactured on a p-substrate and said first terminal of said first photodiode is a cathode of said first photodiode. An image sensor circuit as claimed in claim 1, 2, 3, or 4 wherein said circuit is manufactured on an n-substrate and said first terminal of said first photodiode is an anode of said first photodiode. An image sensor circuit as claimed in claim 1, 2, 3, or 4 wherein said third MOS transistor is a PMOS transistor, and said connections of said drain and said source of said third MOS transistor are reversed. An image sensor circuit as claimed in claim 1, 2, 3, 4, or 5 including a second photodiode [103] having a first of its terminals coupled to a source of said first MOS transistor, wherein said first MOS transistor also collects charge developed by light falling on said second photodiode. An image sensor circuit as claimed in claim 8 wherein said circuit is manufactured on a p-substrate and said first terminal of said second photodiode is a cathode of said second photodiode. An image sensor circuit as claimed in claim 8 wherein said circuit is manufactured on an n-substrate and said first terminal of said second photodiode is an anode of said second photodiode. An image sensor circuit as claimed in claim 1 wherein said capacitor is coupled to an amplifier [115]. An image sensor circuit as claimed in claim 11 wherein said amplifier is coupled to a sample-and-hold circuit [127]. An image sensor circuit as claimed in claim 11 wherein said amplifier is coupled to at least two sample-and-hold circuits [127, 129]. An image sensor circuit as claimed in claim 13 wherein a first of said at least two sample-and-hold circuits is operative to store a representation of a first output in response to said third MOS transistor being on and an enabling signal applied to a gate of said first MOS transistor. An image sensor circuit as claimed in claim 13 wherein a second of said at least two sample-and-hold circuits is operative to store a representation of a second output in response to said third MOS transistor being off and to a disabling signal applied to a gate of said first MOS transistor for turning said first MOS transistor off. An image sensor circuit as claimed in claim 13 wherein a second of said at least two sample-and-hold circuits is operative to store a representation of a second output in response to a turn off signal applied to a gate of said first MOS transistor for turning off said first MOS transistor, and said third MOS transistor being off. An image sensor circuit as claimed in claim 13 wherein, in a first operating state, a first of said at least two sample-and-hold circuits is operative to store a representation of a first output in response to said third MOS transistor being on and an enabling signal applied to a gate of said first MOS transistor and, in a second operating state, a second of said at least two sample-and-hold circuits is operative to store a representation of a second output, which includes charge accumulated by said first MOS transistor and transferred to said capacitor, in response to said third MOS transistor being off and to a disabling signal applied to a gate of said first MOS transistor for turning said first MOS transistor off. An image sensor circuit as claimed in claim 17 including means for determining a difference between said representation of said first output stored in said first of said at least two sample-and-hold circuits and said representation of said second output stored in said second of said at least two sample-and-hold circuits. A method of operating an image sensor circuit, said image sensor including a first photodiode [105], having first and second terminals; a first metal oxide semiconductor (MOS) transistor [121], a drain of said MOS transistor being coupled to said first terminal of said first photodiode for collecting charge developed by light falling on said first photodiode; a second MOS transistor [111] in a common gate configuration, a source of said second MOS transistor being coupled to said first terminal of said first photodiode and to said drain of said first MOS transistor; a capacitor [117], one terminal of said capacitor being coupled to a drain of said second transistor; and a third MOS transistor [113], said source of said third MOS transistor being coupled to said drain of said second transistor, the method including the steps of: collecting electrons developed by light falling on said first photodiode; setting the value of a voltage across said capacitor to a first value; storing a representation of said first value; transferring said collected electrons to said capacitor; and storing a representation of the value of a second voltage across said capacitor after said transferring step A method as claimed in claim 19 including the step of developing a difference between said stored representation of said first value and said stored representation of the value of a second voltage across said capacitor after said transferring step.

Inventors: ACKLAND BRYAN DAVID, INGLIS DAVID ANDREW, LOINAZ MARC J, ACKLAND, BRYAN DAVID, INGLIS, DAVID ANDREW, LOINAZ, MARC J.
Applicants: LUCENT TECHNOLOGIES INC, LUCENT TECHNOLOGIES INC.
Application year: 1998
Main classification: H01L27
IPC codes: H01L27, H04N5, H04N3