Electron emission device and display device using the same

Abstract: An electron emission device exhibits a high electron emission efficiency. The device includes an electron supply layer (12) of metal or semiconductor, an insulator layer (13) formed on the electron supply layer (12), and a thin-film metal electrode (15) formed on the insulator layer (13). The insulator layer (13) is made of an amorphous dielectric substance and has a film thickness of 50 nm or greater and has an amorphous phase with an average grain size of 5 to 100 nm as a major component and a polycrystal phase as a minor component. When an electric field is applied between the electron supply layer (12) and the thin-film metal electrode (15), the electron emission device emits electrons.

Description: The present invention relates to an electron emission device and an electron emission display device using the same. In field electron emission display apparatuses, an FED (Field Emission Display) is known as a planar emission display device equipped with an array of cold-cathode electron emission source which does not require cathode heating. The emission principle of, for example, an FED using a spindt type cold cathode is as follows: Its emission principle is like a CRT (Cathode Ray Tube), although this FED has a cathode array different from that of CRT, that is, electrons are drawn into a vacuum space by means of a gate electrode spaced apart from the cathode, and the electrons are made to impinge upon the fluorescent substance that is coated on a transparent anode, thereby causing light emission. This field emission source, however, faces a problem of low production yield because the manufacture of the minute spindt type cold cathode is complex and involves many steps. There also exists an electron emission device with a metal-insulator-metal (MIM) structure as a planar electron source. This electron emission device with an MIM structure has an Al layer as a cathode, an Al 2 O 3 insulator layer of about 10 nm in film thickness and an Au layer, as an anode, of about 10 nm in film thickness formed in order on the substrate. With this device placed under an opposing electrode in a vacuum, when a voltage is applied between the underlying Al layer and the overlying Au layer and an acceleration voltage is applied to the opposing electrode, some of electrons leap out of the overlying Au layer and reach the opposing electrode. Even the electron emission device with the MIM structure does not yet provide a sufficient amount of emitted electrons. To improve this property of emission, it is considered that there is a necessity to make the Al 2 O 3 insulator layer thinner by about several nanometers and make the quality of the membranous of the Al 2 O 3 insulator layer and the interface between the Al 2 O 3 insulator layer and the overlying Au layer more uniform. To provide a thinner and more uniform insulator layer, for example, an attempt has been made to control the formation current by using an anodization thereby to improve the electron emission characteristic, as in the invention described in Japanese Patent Application kokai No. Hei 7-65710. However, even an electron emission device with an MIM structure which is manufactured by this method ensures an emission current of about 1 x 10 -5 A/cm 2 and an electron emission efficiency of about 1 x 10 -3 . Trogan, Journal of Vacuum Science and Technology, B, II (1993) pp 514-517, describes a MIM device with a dielectric silica layer 100 to 120 nm thick, a current density of about 30 to 50 mA/cm 2 , and a transmission coefficient improved from 3 x 10 -3 to (7-8) x 10 -3 , according to the pre-characterizing portion of claim 1. Accordingly, it is an object of the present invention to provide an electron emission device according to claim 1 with a high electron emission efficiency and an electron emission display apparatus according to claim 2 using the same. An electron emission device according to the invention comprises: an electron supply layer of metal or semiconductor; an insulator layer formed on the electron supply layer; and a thin-film metal electrode formed on the insulator layer and facing a vacuum space, whereby the electron emission device emits electrons when an electric field is applied between the electron supply layer and the thin-film metal electrode, and in which said insulator layer is made of an amorphous dielectric substance and has a film thickness of 50 nm or greater and has an amorphous phase with an average grain size of 5 to 100 nm as a major component and a polycrystal phase as a minor component. According to the electron emission device of the invention with the above structure, through-bores-are not likely to be produced in the insulator layer because of its large thickness and then the production yield is improved. The emission current of the electron emission device is greater than 1 x 10 -6 A/cm 2 and is approximately 1 x 10 -3 A/cm 2 , and the electron emission efficiency obtained is 1 x 10 -1 . Therefore, this electron emission device, when in use in a display device, can provide a high luminance, can suppress the consumption of the drive current and the generation of heat from the device, and can reduce a burden on the driving circuit. The electron emission device of the invention is a planar or spot-like electron emission diode and can be adapted to high speed devices such as a source of a pixel vacuum tube or bulb, an electromagnetic emission source of an electron microscope, a vacuum-micro electronics device and the like. In addition, this electron emission device can serve as a light-emitting diode or a laser diode which emits electromagnetic waves of infrared rays, visible light or ultraviolet rays. The invention also provides a display device and a display incorporating the electron emission device, as defined in claims 2 and 3. Fig. 1 is a schematic cross-sectional view of an electron emission device according to the invention; Fig. 2 is a graph showing a dependency of the electron emission current on the film thickness of an SiO 2 layer in the electron emission device embodying the invention; Fig. 3 is a graph showing a dependency of the electron emission efficiency on the film thickness of the SiO 2 layer in the electron emission device embodying the invention; Fig. 4 is a graph illustrating a dependency of the electron emission current on the grain size of an SiO 2 layer in the electron emission device according to the invention; Fig. 5 is graph showing a dependency of the electron emission efficiency on the grain size of the SiO 2 layer in the electron emission device according to the invention; Fig. 6 is a schematic perspective view showing an electron emission display device according to one embodiment of the invention; and Fig. 7 is a diagram for explaining the operation of the electron emission device of the invention. Preferred embodiments according to the present invention will be described in more detail with reference to the accompanying drawings. As shown in Fig. 1, an electron emission device embodying the invention has an ohmic electrode 11 formed on a device substrate 10. The electron emission device further has an electron supply layer 12 of metal or semiconductor such as Si, an insulator layer 13 of SiO 2 or the like and a thin-film metal electrode 15 of metal facing a vacuum space which are layered or formed in turn on the ohmic electrode. The electron emission device emits electrons when an electric field is applied between the electron supply layer and the thin-film metal electrode. The insulator layer 13 is made of a dielectric substance and has a very large film thickness of 50 nm or greater. The electron emission device can be regarded as a diode of which the thin-film metal electrode 15 at its surface is connected to a positive potential Vd and the back i.e., ohmic electrode 11 is connected to a ground potential. When the voltage Vd is applied between the ohmic electrode 11 and the thin-film metal electrode 15 to supply electrons into the electron supply layer 12, a diode current Id flows. Since the insulator layer 13 has a high resistance, most of the applied electric field is applied to the insulator layer 13. The electrons travel inside the insulator layer 13 toward the thin-film metal electrode 15. Some of the electrons that reach near the thin-film metal electrode 15 tunnel through the thin-film metal electrode 15, due to the strong field, to be discharged out into the vacuum space. The electrons e (emission current Ie) discharged from the thin-film metal electrode 15 by the tunnel effect are accelerated by a high voltage Vc, which is applied to an opposing collector electrode (transparent electrode) 2, and is collected at the collector electrode 2. If a fluorescent substance is coated on the collector electrode 2, corresponding visible light is emitted. While Si is particularly effective as a material for the electron supply layer of the electron emission device, an elemental semiconductor or a compound semiconductor of an element of a group IV, a group III-V, a group II-VI or the like, such as a germanium (Ge), silicon carbide (SiC), gallium arsenide (GaAs), indium phosphide (InP), or cadmium selenide (CdSe) can be used as well. While metals such as Al, Au, Ag and Cu are effective as the electron supplying material, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Zn, Ga, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Cd, Ln, Sn, Ta, W, Re, Os, Ir, Pt, Tl, Pb, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu and the like can be used as well. Silicon oxide SiO x (wherein subscribed x represents an atomic ratio) is effective as the dielectric material of the insulator layer and, metal oxides or metal nitrides such as LiO x , LiN x , NaO x , KO x , RbO x , CsO x , BeO x , MgO x , MgN x , CaO x , CaN x , SrO x , BaO x , ScO x , YO x , YN x , LaO x , LaN x , CeO x , PrO x , NdO x , SmO x , EuO x , GdO x , TbO x , DyO x , HoO x , ErO x , TmO x , YbO x , LuO x , TiO x , TiN x , ZrO x , ZrN x , HfO x , HfN x , ThO x , VO x , VN x , NbO x , TaO x , TaN x , CrO x , CrN x , MoO x , MoN x , WO x , WN x , MnO x , ReO x , FeO x , FeN x , RuO x , OsO x , CoO x , RhO x , IrO x , NiO x , PdO x , PtO x , CuO x , CuN x , AgO x , AuO x , ZnO x , CdO x , HgO x , BO x , BN x , AlO x , AlN x , GaO x , GaN x , InO x , TiO x , TiN x , SiN x , GeO x , SnO x , PbO x , PO x , PN x , AsO x , SbO x , SeO x , TeO x and the like can be used as well. Furthermore, metal complex oxides such LiAlO 2 , Li 2 SiO 3 , Li 2 TiO 3 , Na 2 Al 22 O 34 , NaFeO 2 , Na 4 SiO 4 , K 2 SiO 3 , K 2 TiO 3 , K 2 WO 4 , Rb 2 CrO 4 , Cs 2 CrO 4 , MgAl 2 O 4 , MgFe 2 O 4 , MgTiO 3 , CaTiO 3 , CaWO 4 , CaZrO 3 , SrFe 12 O 19 , SrTiO 3 , SrZrO 3 , BaAl 2 O 4 , BaFe 12 O 19 , BaTiO 3 , Y 3 A 15 O 12 , Y 3 Fe 5 O 12 , LaFeO 3 , La 3 Fe 5 O 12 , La 2 Ti 2 O 7 , CeSnO 4 , CeTiO 4 , Sm 3 Fe 5 O 12 , EuFeO 3 , Eu 3 Fe 5 O 12 , GdFeO 3 , Gd 3 Fe 5 O 12 , DyFeO 3 , Dy 3 Fe 5 O 12 , HoFeO 3 , Ho 3 Fe 5 O 12 , ErFeO 3 , Er 3 Fe 5 O 12 , Tm 3 Fe 5 O 12 , LuFeO 3 , Lu 3 Fe 5 O 12 , NiTiO 3 , Al 2 TiO 3 , FeTiO 3 , BaZrO 3 , LiZrO 3 , MgZrO 3 , HfTiO 4 , NH 4 VO 3 , AgVO 3 , LiVO 3 , BaNb 2 O 6 , NaNbO 3 , SrNb 2 O 6 , KTaO 3 , NaTaO 3 , SrTa 2 O 6 , CuCr 2 O 4 , Ag 2 CrO 4 , BaCrO 4 , K 2 MoO 4 , Na 2 MoO 4 , NiMoO 4 , BaWO 4 , Na 2 WO 4 , SrWO 4 , MnCr 2 O 4 , MnFe 2 O 4 , MnTiO 3 , MnWO 4 , CoFe 2 O 4 , ZnFe 2 O 4 , FeWO 4 , CoMoO 4 , CoTiO 3 , CoWO 4 , NiFe 2 O 4 , NiWO 4 , CuFe 2 O 4 , CuMoO 4 , CuTiO 3 , CuWO 4 , Ag 2 MoO 4 , Ag 2 WO 4 , ZnAl 2 O 4 , ZnMoO 4 , ZnWO 4 , CdSnO 3 , CdTiO 3 , CdMoO 4 , CdWO 4 , NaAlO 2 , MgAl 2 O 4 , SrAl 2 O 4 , Gd 3 Ga 5 O 12 , InFeO 3 , MgIn 2 O 4 , Al 2 TiO 5 , FeTiO 3 , MgTiO 3 , NaSiO 3 , CaSiO 3 , ZrSiO 4 , K 2 GeO 3 , Li 2 GeO 3 , Na 2 GeO 3 , Bi 2 Sn 3 O 9 , MgSnO 3 , SrSnO 3 , PbSiO 3 , PbMoO 4 , PbTiO 3 , SnO 2 -Sb 2 O 3 , CuSeO 4 , Na 2 SeO 3 , ZnSeO 3 , K 2 TeO 3 , K 2 TeO 4 , Na 2 TeO 3 , Na 2 TeO 4 and the like can be used as well and still furthermore, sulfides such as FeS, Al 2 S 3 , MgS, ZnS and the like, fluorides such as LiF, MgF 2 , SmF 3 and the like, chlorides such as HgCl, FeCl 2 , CrCl 3 and the like, bromides such as AgBr, CuBr, MnBr 2 and the like, iodide such as PbI 2 , CuI, FeI 2 and the like and metal oxidized nitrides such as SiAlON and the like can be used as well for the insulator layer. Moreover, carbon such as diamond, Fulleren (C 2n ) and the like or metal carbide such as Al 4 C 3 , B 4 C, CaC 2 , Cr 3 C 2 , Mo 2 C, MoC, NbC, SiC, TaC, TiC, VC, W 2 C, WC, ZrC and the like are also effective as the dielectric material of the insulator layer. Fulleren (C 2n ) consists of carbon atoms. The representative C 60 is a spherical surface basket molecule as known a soccer ball molecule. There is also known C 32 to C 960 and the like. The subscribed x in O x , N x and the like in the above chemical formulas represent atomic ratios and also herein after. Although metals such as Pt, Au, W, Ru and Ir are effective as the material for the thin-film metal electrode 15 on the electron emission side, Al, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Y, Zr, Nb, Mo, Tc, Rh, Pd, Ag, Cd, Ln, Sn, Ta, Re, Os, Tl, Pb, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu and the like can be used as well. The material for the device substrate 10 may be ceramics such as Al 2 O 3 , Si 3 N 4 or BN instead of glass. Although sputtering is particularly effective in forming those layers and the substrate, vacuum deposition method, CVD (Chemical Vapor Deposition), laser aberration method, MBE (Molecular Beam Epitaxy) and ion beam sputtering are also effective. <EXAMPLES> Electron emission devices according to the invention were fabricated and their characteristics were examined specifically. An electron supply layer of silicon (Si) was formed at 5000 nm thick, by sputtering, on an electrode surface of a device substrate 10 of glass on which an Al ohmic electrode was formed 300 nm thick by sputtering. A plurality of Si substrates of this type were prepared. Then, SiO 2 insulator layers were formed on the electron supply layers of the Si substrate by sputtering respectively while changing the film thickness of the insulator layer in a range from 0 nm to 500 nm. Thus a plurality of SiO 2 insulator substrates were provided. The SiO 2 insulator layer was formed by sputtering by using a gas of Ar, Kr or Xe or a mixture thereof, or a gas mixture essentially consisting of one of those rare gases with O 2 , N 2 , H 2 or the like mixed therein, under the sputtering conditions of a gas pressure of 0.1 to 100 mTorr, preferably 0.1 to 20 mTorr and the forming rate of 0.1 to 1000 nm/min, preferably 0.5 to 100 nm/min. The single layer or multilayer structure, the amorphous or crystal phase, the grain size and the atomic ratio of the insulator layer 13 was able to be controlled by properly altering the sputtering target and sputtering conditions of the sputtering device. The analysis on the SiO 2 insulator layer in this embodiment by X-ray diffraction was performed and then the result showed some diffraction intensity Ic caused by the crystal portion and some halo intensity Ia caused by the amorphous phase at a ratio Ic/Ia of about 5/95. It can be assumed from this result that SiO 2 of the insulator layer consists of a dispersed crystal portion of 5% and an amorphous phase portion of 95%. Finally, a thin-film metal electrode of Pt was formed 10 nm thick on the surface of the amorphous SiO 2 layer of each substrate by sputtering, thus providing a plurality of device substrates. Meanwhile, transparent substrates were prepared, each of which has an ITO collector electrode formed inside a transparent glass substrate and has a fluorescent layer of a fluorescent substance corresponding to R, G or B color emission formed on the collector electrode by the normal scheme. Electron emission devices were assembled in each of which the device substrate and the transparent substrate are supported apart from one another by 10 mm in parallel by a spacer in such a way that the thin-film metal electrode 15 faced the collector electrode 2, with the clearance therebetween made to a vacuum of 10 -7 Torr or 10 -5 Pa. Then, the diode current Id and the emission current Ie corresponding to the thickness of the SiO 2 film of each of the acquired plural devices were measured. Figs. 2 and 3 show the relationships between the film thickness of each SiO 2 layer and the maximum emission current Ie, and between the film thickness and the maximum electron emission efficiency (Ie/Id) for each film thickness respectively when a voltage Vd of 0 to 200 V was applied to the prepared electron emission devices. As apparent from Figs. 2 and 3, while the emission current and the electron emission efficiency were saturated from the thickness of 50 nm, the devices whose SiO 2 layers had thicknesses of 300 to 400 nm showed the maximum emission current of about 1 x 10 -3 A/cm 2 and the maximum electron emission efficiency of about 1 x 10 -1 . It is understood from those results that by applying a voltage of 200 V or lower, the emission current of 1 x 10 -6 A/cm 2 or greater and the electron emission efficiency of 1 x 10 -3 or greater can be acquired from an electron emission device which has an SiO 2 dielectric layer 50 nm or greater in thickness, preferably 100 to 400 nm in thickness. With a voltage of approximately 4 kV applied between the fluorescent-substance coated collector electrode and the thin-film metal electrode, a uniform fluorescent pattern corresponding to the shape of the thin-film metal electrode was observed in the devices whose SiO 2 layers have thicknesses of 50 nm or greater. This shows that the electron emission from the amorphous SiO 2 layer is uniform and has a high linearity, and that those devices can serve as an electron emission diode, or a light-emitting diode or laser diode which emits electromagnetic waves of infrared rays, visible light or ultraviolet rays. Next, there were measured the diode current Id and the emission current Ie corresponding to the grain size of SiO 2 with respect the insulator layers each having a 400 nm thickness of the resultant devices. Figs. 4 and 5 show the relationships between the grain size of SiO 2 layer and both the maximum emission current Ie and the maximum electron emission efficiency (Ie/Id) respectively. As seen from Figs. 4 and 5, the distribution of grain size in amorphous SiO 2 exists. It is understood from those results that the emission current of 1 x 10 -6 A/cm 2 or greater and the electron emission efficiency of 1 x 10 -3 or greater can be acquired from an electron emission device which has an insulator layer of amorphous SiO 2 having a average grain size of 5 to 100 nm. When there were observation of the surface of the insulator layer by a scanning electron microscope (SEM) during the above formation process, grain surface each having an about 20 nm diameter appeared in comparison with that formed by CVD. The peculiar phenomenon that the tunnel current flows through the insulator layer which has a thickness of 50 nm or greater seems to be originated from the grain structure of SiO 2 of the insulator layer. As shown in Fig. 7, while SiO 2 is an insulator by nature, multiple bands with low potentials are caused by the grain structure or crystal defects adjacent thereto or impurities in the insulator layer. It is assumed that electrons tunnel through one low-potential band after another, and thus tunnel through the insulator layer of 50 nm or greater in thickness as a consequence. Fig. 6 shows an electron emission display device according to one embodiment of the invention. This embodiment comprises a pair of the transparent substrate 1 and the device substrate 10, which face each other with a vacuum space 4 in between. In the illustrated electron emission display apparatus, a plurality of transparent collector electrodes 2 of, for example, an indium tin oxide (so-called ITO), tin oxide (SnO), zinc oxide (ZnO) or the like, are formed in parallel on the inner surface of the transparent glass substrate 1 or the display surface (which faces the back substrate 10). The collector electrodes 2 may be formed integrally. The transparent collector electrodes which trap emitted electrons are arranged in groups of three in association with red (R), green (G) and blue (B) color signals in order to provide a color display panel, and voltages are applied to those three collector electrodes respectively. Therefore, fluorescent layers 3R, 3G and 3B of fluorescent substances corresponding to R, G and B are respectively formed on the three collector electrodes 2 in such a way as to face the vacuum space 4. A plurality of ohmic electrodes 11 are formed in parallel on the inner surface of the device substrate 10 of glass or the like which faces the transparent glass substrate 1 with the vacuum space 4 in between (i.e., said inner surface faces the transparent glass substrate 1) via an auxiliary insulator layer 18. The auxiliary insulator layer 18 is comprised of an insulator such as SiO 2 , SiN x , Al 2 O 3 or AlN, and serves to prevent an adverse influence of the device substrate 10 on the device (such as elution of an impurity such as an alkaline component or a roughened substrate surface). A plurality of electron emission devices S are formed on the ohmic electrodes 11. In order to adjoining thin-film metal electrodes 15 are electrically connected to each other, a plurality of bus electrodes 16 are formed on parts of the thin-film metal electrodes 15, extending in parallel to one another and perpendicular to the ohmic electrodes 11. Each electron emission device S comprises the electron supply layer 12, the insulator layer 13 and the thin-film metal electrode 15 which are formed in order on the associated ohmic electrode 11. The thin-film metal electrodes 15 face the vacuum space 4. A second auxiliary insulator layer 17 with openings is formed to separate the surfaces of the thin-film metal electrodes 15 into a plurality of electron emission regions. This second auxiliary insulator layer 17 covers the bus electrodes 16 to prevent unnecessary short-circuiting. The material for the ohmic electrodes 11 is Au, Pt, Al, W or the like which is generally used for the wires of an IC, and has a uniform thickness for supplying substantially the same current to the individual devices. While silicon (Si) is one material for the electron supply layer 12, it is not restrictive for the electron supply layer of the invention and other semiconductors or metals of any of amorphous, polycrystal and monocrystal can be used as well. From the principle of electron emission, it is better that the material for the thin-film metal electrode 15 has a lower work function ø and is thinner. To increase the electron emission efficiency, the material for the thin-film metal electrode 15 should be a metal of the group I or group II in the periodic table; for example, Cs, Rb, Li, Sr, Mg, Ba, Ca and the like are effective and alloys of those elements may be used as well. To make the thin-film metal electrode 15 very thin, the material for the thin-film metal electrode 15 should be a chemically stable metal with a high conductivity; for example, single substances of Au, Pt, Lu, Ag and Cu or alloys thereof are desirable. It is effective to coat or dope a metal with a low work function as described above on or in those metals. The material for the bus electrodes 16 can be Au, Pt, Al or the like which is generally used for the wires of an IC, and should have a thickness enough to supply substantially the same potential to the individual devices, adequately of 0.1 to 50 µm. A simple matrix system or an active matrix system may be employed as the driving system for the display device of the invention. The electron emission device of the invention can be adapted to a light-emitting source for a pixel bulb, an electron emission source for an electron microscope and a fast device such as a vacuum microelectronics device, and can serve as a planar or spot-like electron emission diode, a light-emitting diode or a laser diode which emits electromagnetic waves of infrared rays, visible light or ultraviolet rays.

Claims: An electron emission device comprising: an electron supply layer (12) of metal or semiconductor; an insulator layer (13) formed on the electron supply layer and having a film thickness of 50 nm or greater; and a thin-film metal electrode (15) formed on the insulator layer and facing a vacuum space (4), whereby, in use, the electron emission device emits electrons when an electric field is applied between the electron supply layer (12) and the thin-film metal electrode (15), characterised in that said insulator layer (13) is made of an amorphous dielectric substance and has an amorphous phase with an average grain size of 5 to 100 nm as a major component and a polycrystal phase as a minor component. An electron emission display device comprising: a pair of first and second substrates (1,10) facing each other with a vacuum space (4) in between; a plurality of electron emission devices provided on the first substrate (10); a collector electrode (2) provided on the second substrate (1); and a fluorescent layer (3R, 3G, 3B) formed on the collector electrode (2), characterised in that the electron emission devices are as claimed in claim 1. An electron emission display as claimed in claim 2, characterised in that a plurality of ohmic electrodes (11) is provided in parallel on an inner surface of the first substrate (10); a said electron emission device is provided on each ohmic electrode (11), a plurality of bus electrodes (16) is provided on parts of the thin-film metal electrodes (15) of the electron emission devices, the bus electrodes (16) extending in parallel to one another and perpendicular to the ohmic electrodes (11) so as to electrically connect adjacent thin-film metal electrodes (15); a plurality of the collector electrodes (2) is provided on the second substrate (10) which is transparent; and the fluorescent layers (3R, 3G, 3B) are formed on the collector electrodes (2). An electron emission display device according to claim 3, characterised by a second auxiliary insulator layer (17) with openings formed therein to separate the surfaces of the thin-film metal electrodes (15) of the electron emission devices into a plurality of electron emission regions. An electron emission display device according to claim 4, characterised in that the second auxiliary insulator layer (17) covers the bus electrodes (16).

Inventors: CHUMAN TAKASHI, IWASAKI SHINGO, CHUMAN, TAKASHI, IWASAKI, SHINGO, Chuman, Takashi, Pioneer Electronic Corp., Iwasaki, Shingo, Pioneer Electronic Corp.
Applicants: PIONEER ELECTRONIC CORP, PIONEER ELECTRONIC CORPORATION
Application year: 1998
Main classification: H01J1
IPC codes: H01J29, H01J1, H01J31