MODULAR DIELECTRIC BARRIER DISCHARGE DEVICE FOR POLLUTION ABATEMENT

Abstract: A device (10) for purifying a gas stream (30) made up of a plurality of DBD cells (12a, 12b, 12c) in series and, for each of the DBD cells (12a, 12b, 12c), a power supply (24a, 24b, 24c) for providing alternating current to each DBD cell (12a, 12b, 12c).

Description: MODULAR DIELECTRIC BARRIER DISCHARGE DEVICE FOR POLLUTION ABATEMENT FIELD AND BACKGROUND OF THE INVENTION The present invention relates to pollution abatement and, more particularly, to a device for destroying gaseous pollutants by passing the pollutants through a plasma and possibly additional gas. Gases that are hazardous or otherwise undesirable are produced by many commercial and industπal processes. Notable examples include oxides of nitrogen and sulfur, emitted, for example, from internal combustion engines and from power plants; chemical and biological agents such as saπn and tabun, and fluoπne-containing greenhouse gases (perfluorocarbons) such as CF 4 , CHF 3 , C 2 HF 5 , C 2 H 2 F and SF 6 that are used m the fabπcation of semiconductor devices. There are three general method to control emissions of these gases: 1. Control the processes that generate or use such gases to minimize their production or use. 2 In the case of gases deliberately introduced to industπal processes such as semiconductor device fabπcation, collect and recycle the emitted gases. 3. Convert the gases to environmentally safer compounds. The present invention addresses the third general method. Traditionally, the semiconductor industry has incinerated effluent gases The burners used tend to be large, inefficient and expensive. Recently, it has been proposed to use plasmas, such as are used for generating ozone from oxygen, to destroy unwanted gaseous species The high energy electrons of a plasma deliver their energy efficiently to atoms and molecules without heating the device which creates the plasma. The modification of the gas molecules is done by direct interaction with the electrons through electron attachment, dissociation or lonization, or throush interaction with free radicals venerated bv the electrons 9 There are two types of plasmas that may be used for pollution abatement: thermal plasmas and non-thermal plasmas A thermal plasma is one that is in thermal equihbπum. Such plasmas may be generated by, for example, continuous RF or microwave energy. The particle energy in the plasma is a function of the plasma temperature, on the order of kT, where k is Boltzmann's constant and T is the plasma temperature. For typical thermal plasmas, the particle energy is on the order of electron volts. Non-thermal plasmas generate much higher electron energies, and therefore are characteπzed by more efficient energy transfer than thermal plasmas The disadvantage of non-thermal plasmas is that they are more difficult to control and to keep uniform than are thermal plasmas. Two types of non-thermal plasmas have been considered for pollution abatement- pulsed corona discharge and dielectπc barπer discharge (DBD) In pulsed corona discharge, the plasma is generated between two electrodes by a pulse of high voltage across the electrodes, which creates a discharge in the gas between the electrodes To prevent the creation of a single arc discharge which would carry the entire current and create a non- uniform plasma, the voltage pulse is kept short, on the order of tens of nanoseconds, and is repeated at a rate on the order of hundreds of times per second. The plasma discharge channels thus created do not have enough time to turn into an arc, so many discharge channels are created duπng the short lifetime of the pulse. Nevertheless, it is difficult to create a very uniform corona discharge. A representative US patent descπbing a pulsed corona reactor is US 5,490,973, to Grothaus et al. In a DBD device, one or both of the electrodes are covered with an insulator so that the energy for the discharge is supplied capacitatively through the insulator This limits the amount of energy that each discharge channel can receive It therefore is possible to generate more channels and obtain a more uniform discharge SUMMARY OF THE INVENTION According to the present invention there is provided a device for puπfying a gas stream, including: (a) a plurality of DBD cells in seπes; (b) for each of the DBD cells, a power supply for providing alternating cuπent to the each DBD cell. According to the present invention there is provided a method for puπfying a gas stream, including the steps of: (a) providing a plurality of DBD cells in seπes; and (b) causing the gas stream to flow through said DBD cells. The basic structure of the present invention is a plurality of DBD cells in seπes. By "seπes" is meant, not that the cells are electrically in seπes, for indeed each cell is part of an independent electπcal circuit, but that the cells are arranged geometπcally so that the gas stream to be puπfied passes sequentially from one cell to the next. Each cell is provided with its own independent high frequency power supply. In conformity with common usage, these power supplies are referred to herein as supplying "alternating current" to the DBD cells, although the parameter of the power supplies that actually is controlled is the voltage, with the supplied cuπents then depending on the impedances of the DBD cells according to Ohm's law. Preferably, the power supplies are switching mode resonant power supplies. The use of several small DBD cells instead of one large DBD cell has the following advantages: 1. The smaller capacitance of a small cell makes it easier to dπve at high frequencies At higher frequencies, more discharge channels are created, so the plasma is more uniform The smaller power supplies used with the smaller cells are simpler and more efficient than the large power supply that would be needed for a single large cell 2. A plurality of cells is easier to control than a single cell It is easier and more efficient to control the concentrations of chemical species inside a plurality of small cells than inside a single large cell According to the present invention, sensors are provided to measure the concentrations of gaseous species emerging from each cell and plasma conditions inside each cell. Power supply parameters such as frequency and voltage are adjusted adaptively, in accordance with the results of the measurements, to enhance the destruction of the unwanted species. 3. A reactor made of a plurality of cells is modular. If one cell must be taken off line for maintenance, the reactor can continue to function. The scope of the present invention also includes the injection of an additive gas, such as nitrogen or oxygen, into the gas stream, at the inlet to one or more of the cells, to enhance the destruction of the unwanted gaseous species and their conversion to safe gases. As in the case of the power supply parameters, the rate of injection of the additive gas is controlled in accordance with the measured concentrations and plasma conditions. BRIEF DESCRIPTION OF THE DRAWINGS The invention is herein descπbed, by way of example only, with reference to the accompanying drawings, wherein: FIG. 1 is a schematic illustration of a basic device of the present invention; FIGS. 2 A through 2F are cross sections of alternative constructions of a DBD cell; FIG. 3 is a schematic axial cross section of another DBD cell; FIG. 4 is a schematic diagram of a power supply; FIG. 5 is a schematic illustration of a preferred device of the present invention; FIG. 6 is an axial cross section of an improved embodiment of the DBD cell of FIG. 2E. DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention is of a modular DBD reactor which can be used to destroy pollutant species in a gas stream, converting the pollutant species to environment-fπendly gases Specifically, the present invention can be controlled adaptively to optimize the destruction of the unwanted species. The pπnciples and operation of a modular DBD reactor according to the present invention may be better understood with reference to the drawings and the accompanying descπption Referring now to the drawings, Figure 1 is a schematic illustration of a basic device 10 of the present invention. Device 10 includes three DBD cells 12a, 12b and 12c. Each DBD cell includes two electrodes: cell 12a includes electrodes 14a and 16a, cell 12b includes electrodes 14b and 16b, and cell 12c includes electrodes 14c and 16c. Electrode 14a is covered by a dielectπc layer 18a Electrode 14b is covered by a dielectπc layer 18b. Electrode 14c is covered by a dielectπc layer 18c. Electrode 16a is covered by a dielectπc layer 20a. Electrode 16b is covered by a dielectπc layer 20b. Electrode 16c is covered by a dielectπc layer 20c. Dielectπc layers 18a and 20a define between them a gap 22a. Dielectπc layers 18b and 20b define between them a gap 22b. Dielectπc layers 18c and 20c define between them a gap 22c. Electrodes 16a, 16b and 16c are grounded. Electrodes 14a, 14b and 14c are connected to high frequency power supplies 24a, 24b and 24c respectively. Each DBD cell has an input end, into which a gas stream 30 to be puπfied enters, and an output end, from which gas stream 30 exits after treatment in that cell: cell 12a has an input end 26a and an output end 28a, cell 12b has an input end 26b and an output end 28b, and cell 12c has an input end 26c and an output end 28c The cells are arranged in seπes, so that gas stream 30, after exiting cell 12a via output end 28a, immediately enters cell 12b via input end 26b, and after exiting cell 12b via output end 28b, immediately enters cell 12c via input end 26c Electrodes 14a, 14b, 14c, 16a, 16b, and 16c are made of an electrically conductive mateπal, preferably a metal, most preferably copper, aluminum or stainless steel Dielectπc layers 18a, 18b, 18c, 20a, 20b and 20c are made of an electπcal insulator, preferably a ceramic such as alumina or quartz For simplicity, only three DBD cells are shown in Figure 1 Typically, device 10 includes 10 cells, but the scope of the present invention includes any convenient number of cells in device 10 greater than or equal to 2. If more than 5 cells are used, one cell may be taken off line for maintenance without disabling the entire device. Figures 2A, 2B, 2C, 2D, 2E and 2F show alternative constructions of DBD cells. Figure 2A is an axial cross section of a cell 12d in which only one electrode 14d is covered by a dielectπc layer 18d; electrode 16d is bare. Electrode 16d and dielectπc layer 18d define between them a gap 22d through which gas stream 30 flows Figures 2B, 2C, 2D, 2E and 2F are transverse cross sections of cylindπcal DBD cells Figure 2B shows a cell 12e that includes two electrodes 14e and 16e, in the form of cylindπcal sections, on opposite sides of a dielectπc tube 18e. In a device 10 including cells such as cell 12e, gas stream 30 flows through inteπor 22e of dielectπc tube 18e. Figure 2C shows a cell 12f in which one electrode is an electπcally conductive cylinder 14f and the other electrode is an electπcally conductive wire 16f concentπc with cylinder 14f. The inner surface of cylinder 14f is coated with a cylindπcal dielectπc layer 18f In a device 10 including cells such as cell 12f, gas stream 30 flows through inteπor 22f of cylinder 18f. Figure 2D shows a cell 12g in which the electrodes are concentπc, electπcally conductive cylinders 14g and 16g. The inner surface of cylinder 14g is coated with a cylindπcal dielectπc layer 18g The outer surface of cylinder 16g is coated with a cylindπcal dielectπc layer 20g. In a device 10 including cells such as cell 12g, gas stream 30 flows through annulus 22g defined by dielectπc cylinders 18g and 20g Figure 2E shows a cell 12h in which the electrodes are concentπc, electπcally conductive cylinders 14h and 16h, cylinder 16h being solid rather than hollow Cylinder 14h is bare The surface of cylinder 16h is coated with a cylindπcal dielectπc layer 20h. In a device 10 including cells such as cell 12h, gas stream 30 flows through inteπor 22h of cylinder 14h. Figure 2F shows a cell 12i in which there are three concentπc electrodes hollow, electπcally conductive cylinders 14i and 15, and solid, electπcally conductive cylinder 16i. The inner surface of cylinder 14i is coated with a cylindπcal dielectπc layer 18i. The surface of cylinder 16i is coated with a cylindπcal dielectπc layer 20i. In a device 10 including cells such as cell 12i, gas stream 30 flows through both an annulus 23 defined by cylinders 15 and 20i and an annulus 23' defined by cylinders 18i and 15. In the operation of a cell such as cell 12i, cylinder 15 is connected to a power supply such as power supply 24a, 24b or 24c, and both cylinders 14i and 16i are grounded. Figure 6 is an axial cross section of an improved embodiment 112 of cell 12h. Cell 112 includes a cylindπcal outer electrode 114 and an inner electrode 116 having an axially varying transverse width w In particular, w vanes sinusoidally with a decreasing amplitude from input end 126 to output end 128. Inner electrode 116 is coated with a dielectnc layer 120 whose transverse width also vanes axially. Inner surface 117 of outer electrode 114 is coated with a layer 118 of a catalyst such as black platinum or titanium for catalyzing the destruction of the pollutant species in gas stream 30. Cell 112 also has, at output end 128, an exit aperture 130 that limits the velocity of gas stream 30, thereby increasing the pressure of the gas in mtenor 122 of cell 112. Alternatively, catalyst layer 118 is on inner electrode 116 and dielectnc layer 120 is on inner surface 117 of outer electrode 114. Typically, the lengths of DBD cells of the present invention are on the order of several centimeters, as are the diameters of cy ndncal DBD cells and the widths of planar cells The thicknesses of the dielectnc layers and the widths of the gaps between dielectnc layers, or between a dielectπc layer and an opposite bare electrode, typically are on the order of several millimeters Figure 3 is a schematic axial cross section of a DBD cell 12j that is geometπcally similar to cells 12a, 12b and 12c. having two electrodes 14j and 16j whose facing surfaces are coated with dielectnc layers 18j and 20j, dielectπc layers 18j and 20j defining between them a gap 22j. Cell 12j is provided with a mechanism for changing width 21 of gap 22j. Specifically, cell 12j is mounted within an insulating housing that consists of an upper part 32 πgidly attached to electrode 14j and a lower part 34 πgidly attached to electrode 16j Parts 32 and 34 have matching threaded holes through which are inserted threaded rods 36. Threaded rods 36 are extensions of the shafts of stepping motors 38. Stepping motors 38 are activated as descπbed below to rotate rods 36 to change width 23 duπng the operation of a device 10 that includes a cell such as cell 12j. The mechanism illustrated in Figure 3 is only illustrative: the scope of the present invention includes all suitable mechanisms for adjusting the inteπor geometπes of the DBD cells. Preferably, power supplies 24a, 24b and 24c are switching mode resonant power supplies, which are simple, efficient and inexpensive. Figure 4 is a schematic diagram of a representative such power supply 24. Power supply 24 includes a DC power source 40 in seπes with a switch 44, a vaπable inductance 46, and the pπmary winding of a transformer 48; and in parallel with a capacitor 42. The secondary winding of transformer 48 is shown supplying the output AC current of power supply 24 to a DBD cell 12 represented by an equivalent circuit that includes a capacitance 50 in parallel with a resistance 52. Power source 40 supplies a DC voltage on the order of several tens to hundreds of volts. Capacitor 42 is of low equivalent seπes resistance, to enable high peak currents through the pπmary coil of transformer 48 Transformer 48 isolates power supply 24 from cell 12 and matches the load voltage and impedance of cell 12 Typically, the peak voltage supplied by the secondary winding of transformer 48 to cell 12 is on the order of about 300 volts to about 100 kilovolts Vanable inductance 46 is used for matching resonant conditions Capacitance 50 alone represents cell 12 when cell 12 is empty When cell 12 generates a plasma, the power drawn by the generation of the plasma is represented by resistance 52 The mam limitation on the performance of power supply 24 is the performance of switch 44. Solid state IGBT switches work well up to frequencies of about 100 kilohertz at voltages up to one to two kilovolts. MOSFET switches can operate at frequencies up to several MHz at voltages between several hundred to several thousand volts, but as the frequency is increased, the power that can be supplied by power supply 24 with a MOSFET switch 44 decreases. In practice, the range of frequencies at which power supply 24 operates is from about 10 kilohertz to about 3 megahertz. In operation, switch 44 is opened and closed at high frequency. A typical mode of operation is opening and closing switch 44 at a frequency of one megahertz at 50% duty. When the switching frequency is equal to the resonant frequency of load capacitance 50 with the parasitic inductance of transformer 48 combined with vaπable inductance 46, a high AC voltage is developed across capacitance 50. The maximum voltage attainable is limited by circuit losses in power supply 24 and by power absorbed by resistance 52 The optimal voltage and mterelectrode gap width is a function of the pressure of gas stream 30. Device 10 may be operated at pressures of gas stream 30 from sub-Ton pressures to several Bars. Preferably, the pressure is on the order of tens of Tons and the dπving voltages are on the order of kilovolts. Preferably, the high-frequency opening and closing of switch 44 is intermittent, a practice commonly known as "chopping" This allows the plasma to relax and provides additional vaπation of the plasma chemistry Preferably, this chopping is effected at a frequency between about 10 hertz and about 100 kilohertz. Figure 5 is a schematic illustration of a prefened version of device 10, including mechanisms for adaptively controlling device 10 duπng operation For clanty, DBD cells 12a, 12b and 12c are represented as boxes, with the senal aπangement of cells 12a, 12b and 12c represented by output end 28a being adjacent to input end 26b and output end 28b being adjacent to input end 26c. Two kinds of sensors are illustrated, one for measunng the concentrations of atomic, ionic and molecular species in gas stream 30 as gas stream 30 transits from cell 12a to cell 12b and from cell 12b to cell 12c, and the other for monitoπng plasma parameters such as temperature, electncal conductivity and plasma density within cells 12a, 12b and 12c Gas species concentrations are measured by laser induced fluorescence. To this end, a colhmated beam 62 of monochromatic light from a laser 60 is directed by a beam splitter 64 into the region between output end 28a and input end 26b and by a minor 66 into the region between output end 28b and input end 26c. Fluorescence excited in gas stream 30 by beam 62 in the region between output end 28a and input end 26b and m the region between output end 28b and input end 26c is detected by spectrometers 68a and 68b, respectively This measurement arrangement is only illustrative The scope of the present invention includes all suitable apparati and methods for measuπng gas species concentrations, for example by laser interferometry, by infrared absorption spectrometry, or by simply diverting samples of gas stream 30 for on-line chemical analysis, for example using gas chromatography/mass spectrometer or residual gas analysis Plasma parameters are measured using Langmuir probes 70a, 70b and 70c, which protrude into gaps 22a, 22b and 22c respectively via output ends 28a, 28b and 28c respectively. Again, this method of measunng plasma parameters is only illustrative, the scope of the present invention including all suitable apparati and methods for measuπng plasma parameters Electπcal signals representative of the readings obtained by spectrometers 68a and 68b and Langmuir probes 70a, 70b and 70c aie conveyed by suitable input lines 74 to a microcomputer-based control system 72 Also shown in Figure 5 is a source 80. of a pressunzed additive gas such as oxygen, nitrogen or hydrogen, connected to cell 12c by an electronically controlled valve 82 and a conduit 84 Plasma electrons in the plasma of cell 12c ionize the molecules of the additive gas to create free radicals and ionic species that react with the undesired species of gas stream 30 and that interact with the oπginal additive gas molecules. Conduit 84 is disposed to introduce the additive gas into gap 22c of cell 12c via input end 26c For clanty, only introduction of the additive gas into cell 12c is illustrated. In fact, the additive gas may be introduced to all of the DBD cells of device 10 In addition, the additive gas may be introduced to gas stream 30 before gas stream 30 enters device 10 or after gas stream 30 leaves device 10. Control system 72 transmits control signals to power supplies 24a, 24b and 24c and to valve 82 via suitable control lines 76 The output frequencies and voltages of power supplies 24a, 24b and 24c and the rate of flow of the additive gas into cell 12c thus are adjusted by control system 72 in accordance with the readings obtained from spectrometers 68a and 68b and from Langmuir probes 70a, 70b and 70c to maximize the destruction of undesired gaseous species in gas flow 30. If one of the cells of device 10 is constructed in the manner of cell 12h of Figure 3, gap width 21 also can be adjusted, by appropnate signals sent from control system 72 to stepping motors 38 For any given gaseous pollution abatement situation, it will be straightforward for one ordinanly skilled in the art to determine how to optimize the frequencies, voltages, gaps and gas flow parameters and to program control system 72 accordingly. For example, one optimal set of parameters for the abatement of the fluonne-containing gases listed above includes a pressure range for gas stream 30 is from about 0 1 Ton to about 200 Ton; a rate of flow on the order of a few hundred seem for the impunties in gas stream 30 and also on the order of a few hundred seem for additive gases such as oxygen and hydrogen, and widths of gaps 22a, 22b and 22c between about 1 mm and about 4 mm Device 10 also can be operated at atmospheπc pressure This ability to operate at atmosphenc pressure greatly expands the range of situations to which device 10 is applicable Figure 7 is a schematic illustration of an expanded embodiment 10' of device 10. In addition to DBD cells 12a, 12b and 12c, device 10' includes three more DBD cells 12j, 12k and 121, also in seπes. Cells 12j, 12k and 121 are collectively in parallel with cells 12a, 12b and 12c "In parallel" means, not that cells 12j, 12k and 121 are electπcally in parallel with cells 12a, 12b and 12c, for, indeed, like cells 12a, 12b and 12c, each of cells 12j, 12k and 121 has its own high frequency power supply 24j, 24k and 241, respectively; but rather that one portion of gas stream 30 traverses cells 12a, 12b and 12c: enteπng cell 12a via input end 26a, exiting cell 12a via output end 28b and immediately enteπng cell 12b via input end 26b, exiting cell 12b via output end 28b and immediately enteπng cell 12c via input end 26c, and finally exiting cell 12c via output end 28c; and another portion of gas stream 30 traverses cells 12j, 12k and 121: enteπng cell 12j via input end 26j, exiting cell 12j via output end 28j and immediately enteπng cell 12k via input end 26k, exiting cell 12k via output end 28k and immediately entenng cell 121 via input end 261, and finally exiting cell 121 via output end 281. Embodiment 10' has higher net throughput than embodiment 10, to handle high-volume gas streams 30. While the invention has been descπbed with respect to a limited number of embodiments, it will be appreciated that many vaπations, modifications and other applications of the invention may be made.

Claims: WHAT IS CLAIMED IS: 1. A device for puπfying a gas stream, compπsing: (a) a plurality of DBD cells in seπes; (b) for each of said DBD cells, a power supply for providing alternating cunent to said each DBD cell. 2. The device of claim 1, wherein each of said power supplies provides alternating current to said each DBD cell at frequencies between about 10 kilohertz and about 3 megahertz. 3. The device of claim 1, wherein each of said power supplies provides alternating current to said each DBD cell at a voltage of between about 300 volts and about 100 kilovolts. 4 The device of claim 1, wherein at least one of said DBD cells has an output end wherefrom said gas stream exits, the device further compπsing. (c) for each of said at least one DBD cell, a sensor disposed to measure a concentration of at least one gas species at said output end. 5. The device of claim 4, wherein said sensor includes a spectrometer. 6 The device of claim 4, further compπsing- (d) a control system, tor adjusting at least one parameter of said power supply that provides said alternating current to said each of said at least one DBD cell, in response to readings from said sensor 7 The device of claim 1, further compπsing. (c) a sensor, operationally associated with one of said DBD cells, for measunng at least one plasma parameter within said one of said DBD cells. 8 The device of claim 7, wherein said sensor includes a Langmuir probe. 9 The device of claim 7, further compnsmg: (d) a control system, for adjusting at least one parameters of said power supply that provides said alternating current to said one of said DBD cells, in response to readings from said sensor 10. The device of claim 1, wherein at least one of said DBD cells has an input end whereto said gas stream exits, the device further compπsing: (c) a mechanism for introducing an additive gas into the gas stream at said input end. 11 The device of claim 1, wherein at least one of said DBD cells includes a mechanism for adjusting at least one parameter of an intenor geometry of said at least one cell 12 The device of claim 13, wherein said at least one parameter of said inteπor geometry includes a gap width of said at least one cell 13 The device of claim 1 , wherein at least one ot said alternating current power supplies is a switching mode resonant power supply 14 The device of claim 13, wherein said at least one switching mode resonant power supply includes a switch selected from the group consisting of solid state IGBT switches and MOSFET switches 15 The device of claim 1, wherein at least one of said DBD cells includes (l) an inner electrode; and (n) an outer electrode surrounding at least a portion of said inner electrode. 16 The device of claim 15, wherein said inner electrode has an axially varying transverse width 17 The device of claim 1, wherein at least one of said DBD cells includes an aperture for increasing a pressure of the gas stream withm said at least one DBD cell. 18 The device of claim 1. further compnsing (c) at least one DBD cell in parallel with said plurality of DBD cells 19 The device of claim 1, wherein at least one of said DBD cells includes an inteπor surface exposed to the gas stream, and wherein said inteπor surface includes a catalyst 20 The device of claim 19, wherein said catalyst is selected from the group consisting of black platinum and titanium 21. A method for punfying a gas stream, compnsing the steps of: (a) providing a plurality of DBD cells in senes; and (b) causing said gas stream to flow through said DBD cells. 22. The method of claim 21, further compnsing the step of: (c) providing a separate alternating current to each of said DBD cells. 23. The method of claim 22, wherein said alternating currents are provided at frequencies between about 10 kilohertz and about 3 megahertz 24. The method of claim 22, wherein said alternating currents are provided at voltages between about 300 volts and about 100 kilovolts. 25. The method of claim 22, further compnsing the step of. (c) at at least one of said DBD cells, detecting a concentration of at least one gas species emerging from said at least one DBD cell. 26. The method of claim 25, further compπsing the step of: (d) adjusting at least one parameter of said alternating current provided to said at least one of said DBD cells, in accordance with said concentration of said at least one gas species 27 The method of claim 22, further compπsing the step of (c) measunng at least one plasma parameter within said DBD cell. 28. The method of claim 27, further compnsing the step of (d) adjusting at least one parameter of said alternating cunent provided to said at least one of said DBD cells, in accordance with said measurement of said at least one plasma parameter. 29. The method of claim 22, further compπsing the step of. (d) chopping said alternating current. 30. The method of claim 29, wherein said chopping is effected at a frequency between about 10 hertz and about 100 kilohertz 31. The method of claim 21 , further compπsing the step of: (c) introducing an additive gas to the gas stream before the gas stream enters one of said DBD cells. 32. The method of claim 31, wherein said additive gas is selected from the group consisting of oxygen, nitrogen and hydrogen. 33. The method of claim 21, wherein at least one of said DBD cells has an inteπor geometry, the method further compπsing the step of. (c) adjusting at least one parameter of said inteπor geometry while the gas stream flows through said DBD cell. 34 The method of claim 33, wherein said at least one parameter of said intenor geometry includes a gap width

Inventors: ROSENBERG AVNER, SHILOH JOSEPH, WURZBERG ELHANAN, ROSENBERG, AVNER, SHILOH, JOSEPH, WURZBERG, ELHANAN
Applicants: ISRAEL STATE, ROSENBERG AVNER, SHILOH JOSEPH, WURZBERG ELHANAN, ROSENBERG, AVNER, SHILOH, JOSEPH, STATE OF ISRAEL - MINISTRY OF DEFENSE RAFAEL - ARMAMENT DEVELOPMENT AUTHORITY, WURZBERG, ELHANAN
Application year: 1998
Main classification: B03C3
IPC codes: B01D53, B01J3, B01J19