A SCHOTTKY DIODE OF SiC AND A METHOD FOR PRODUCTION THEREOF

Abstract: A Schottky diode of SiC has a substrate layer, a drift layer (2) and emitter layer regions (3) formed in the drift layer. A metal layer (4) is making an ohmic contact to the emitter layer regions and Schottky contact to the drift layer. A depletion of the drift layer region between two adjacent emitter layer regions is allowed in the blocking state of the diode making said two adjacent p-type emitter layer regions form a continuous depleted region (9) therebetween in this state.

Description: A SCHOTTKY DIODE OF SiC AND A METHOD FOR PRODUCTION THEREOF TECHNICAL FIELD OF THE INVENTION AND PRIOR ART The present invention relates to a Schottky diode having on top of each other in the order mentioned a substrate layer being highly doped according to a first type, n or p, a drift layer being low doped according to said first type, both of SiC, and a metal layer making a Schottky contact to said drift layer. An advantage of such a Schottky diode with respect to a pn-diode is a lower voltage drop and thereby lower on-state losses, and in a Schottky diode there is due to primarily majority carrier conduction no real reverse recovery behaviour on turning off and forward voltage overshoot on turning on and thereby reduced switch- ing losses compared to the pn-diode making it well suited for use in converter circuits. However, as compared with pn-diodes, practical Schottky diodes suffer from high leakage currents, hard to accept in high power applications, when the Schottky junction is exposed to a high field. SiC has some excellent physical properties, such as a high thermal stability, such that devices fabricated from SiC are able to operate at high temperatures, namely up to 1000 K, a high thermal conductivity, so that SiC devices may be arranged at a high spatial density, and a high breakdown field being approximately ten times higher than for Si. These properties make SiC well suited as a material for high power devices operating under conditions where high voltages may occur in the blocking state of the device, it would be highly desired to be able to provide Schottky diodes of SiC with the " disadvantages thereof according to above substantially reduced making them especially to an attractive option for high power applications. Due to the large bandgap of SiC a Schottky diode made of this material has particular advantages with respect to on-state losses compared to a pn-diode made of this material, since the forward voltage drop of a pn-junction is very large for SiC as compared to for example Si. Furthermore, presently realized Schottky diodes of SiC show a very high leakage current in the blocking mode - much higher than theoretically expected. Another problem of conventional Schottky diodes of SiC is that the maximum electric field is always close to the surface (in the Schottky barrier-region) and the quality of the interface must be very good. Field- concentrations can also appear, especially at the device periphery, and these field-concentrations lead to leakage currents being unacceptable in some applications. SUMMARY OF THE INVENTION The object of the present invention is to provide a Schottky diode of SiC having improved properties with respect to Schottky diodes of SiC already known. This object is according to the invention obtained by providing such a diode, which also comprises emitter layer regions being highly doped according to a second doping type, n or p, being opposite to said first type and formed in said drift layer at a vertical distance from the substrate layer and making an ohmic contact to said metal layer, said regions ■ being laterally separated from each other by drift layer regions, and the doping concentrations of the drift layer and the emitter layer regions, the depths of the emitter layer regions with respect to the location of the Schottky contact between two adjacent emitter layer regions and the lateral distance between these are selected to make the depletion of the drift layer in the blocking state form a continuous depleted region between the emitter layer regions and thereby screening off the high electrical field at the Schottky junction, which by this will not be exposed to high electrical fields. In this way it will be possible to benefit from the advantages of the Schottky diode with respect to the pn-diode and conversely. Thus, at forward voltages well below the built in potential of the pn junction the diode will act as a Schottky diode conducting higher currents at lower voltage drop and thereby having lower on-state losses. Thus, it is relied on transport across the Schottky barrier in the forward direction, while in the blocking state the depletion regions of the pn-junction formed by said emitter layer regions will join each other, pinching off the Schottky region and exposing it only to a low field even at high reverse bias voltages resulting in acceptably low leakage currents also at such high reverse bias voltages due to the pn-type behaviour in such blocking states. Thus, the advantages of this type of Schottky diode with respect to a conventional Schottky diode are that diodes which have to block high voltages in the reverse direction can be given a lower leakage current and there will be a lower on- resistance and thereby lower losses at higher current densities by carrier injection from the highly doped emitter layers. Compared with a conventional pn-diode this type of Schottky diode will have the advantage of a lower forward voltage drop at lower current densities, a lower reverse recovery charge and thereby lower switching losses at higher frequencies. A Schottky diode of this type has particular advantages in the case of making it of silicon carbide, since this material has a large bandgap causing a high pn-diode voltage drop in the forward direction which makes the Schottky diode character very interesting for low current densities in this direction, while the Schottky barriers are easily made high with little leakage at low fields . According to a preferred embodiment of the invention said diode comprises at least one trench etched into said drift layer at the location of a emitter layer region, this emitter layer region forms the bottom of the trench, and said metal layer forms an ohmic contact to said emitter layer region at the bottom of the trench creating a vertical distance between the Schottky contact next to the emitter layer region and the ohmic contact to said emitter layer region in the bottom of the trench. Such a trench results in a comparatively great vertical distance between the emitter layer region and the Schottky contact, so that it will be easier to deplete the drift layer region between two adjacent emitter layer regions than with a emitter layer region closer to the Schottky contact. High fields causing leakage currents may also be kept away from the Schottky contact. According to another preferred embodiment of the invention said emitter layer region forming the bottom of said trench also forms the walls thereof, which facilitates the deple- tion of the drift layer region between two adjacent emitter layer regions for pinching off the Schottky region in the reverse blocking state of the diode. According to another preferred embodiment of the invention said emitter layer region under said trench extends further laterally than the bottom of the trench at least in one direction. Such a diode may be produced without using very delicate lithography and etching techniques with a high resolution, since adjacent trenches may have a compara- tively large lateral distance therebetween, but adjacent emitter layer regions may still be that close to each other that the drift layer region therebetween may easily be depleted in the reverse blocking state of the diode. According to another preferred embodiment of the invention said emitter layer regions are formed by highly doped bars extending substantially laterally in substantially the same plane and crossing each other for forming a bar pattern. The advantage of such a structure is that a metal layer has not to form an ohmic contact to each emitter layer region, since these have a high conductivity due to the high doping concentration and they are in contact with each other, so that ohmic contacts thereto may be formed at some selected locations . According to a preferred embodiment of the invention being a further development of the embodiment last mentioned said bar pattern is buried in said drift layer at a vertical distance to the Schottky contacts of the diode, and at least one trench is etched into the drift layer for obtaining a metal on top of one emitter layer region there and by that an ohmic contact of the metal to all emitter layer regions. Thanks to such a bar pattern such trenches may be etched at selected locations having such a large mutual distance that no delicate lithography is required. According to another preferred embodiment of the invention said trench has a substantially continuous extension forming a frame extending close to the periphery of said bar pattern. It is in this way possible to establish an oh- mic contact to all emitter layer regions in such a diode through a single trench substantially surrounding the diode . According to the invention, there is also proposed a method for producing a junction barrier Schottky diode of SiC comprising the steps of: 1) epitaxially growing on top of each other the following semiconductor layers of SiC: a substrate layer being highly doped according to a first type, n or p, and a drift layer being low doped according to said first type, 2) introducing dopants of a second doping type, n or p, being opposite to said first type, into the drift layer in regions laterally spaced for forming highly doped emitter layer regions in said drift layer at a vertical distance from said substrate layer, 3) applying a metal layer on top of said drift layer for making a Schottky contact thereto and on top of at least one of said emitter layer regions for making an ohmic contact thereto, said ohmic contact and Schottky contact being connected together and forming the anode of the diode, the doping concentrations of said drift layer and said emitter layer regions, the depths of said emitter layer regions with respect to the location of the Schottky contact between two adjacent emitter layer regions and the lateral distance between these being selected to make the depletion of the drift layer in the blocking state form a continuous depleted region between the emitter layers and thereby screening off the high electrical field at the Schottky junction, which by this will not be exposed to high electrical fields This method makes it possible to produce a high quality diode of this type in SiC, although that critical processing steps, such as diffusion, are missing in SiC. The use of the implantation technique for forming the emitter layer regions will make it possible to achieve an optimization of the ratio of the spacing between the regions and their depth. The optimum is a low ratio. According to a preferred embodiment of the invention the method comprises the further steps of: 4) etching a trench from above into said drift layer at locations where said emitter layer regions are to be formed before carrying out step 2 ) , and said p-type dopants are in step 2) introduced into at least the bottom of said trench for forming said emitter layer regions. Thanks to the formation of such a trench it will be possible to obtain a vertical distance of the Schottky contact and the emitter layer regions adjacent thereto being as large as desired, so that the distance between two such adjacent trenches may be comparatively large avoiding the requirement of high resolution of implanted regions for efficient shielding of the Schottky regions. Thus, the lithographic and masking resolution does not have to be that high. According to another preferred embodiment of the invention said p-type dopants are in step 2) implanted by using an acceleration energy exceeding 1 MeV. The use of such a high implantation energy will lead to the same result as etching of a trench, since a lower lithographic and masking resolution may be accepted when such high energies are used than if the implantation was carried out at conventional energies, such as 300 keV, entailing sub-micron resolution of the implanted regions for efficient shielding of the Schottky regions . According to another preferred embodiment of the invention said method further comprises the step of: 5) epitaxially regrowing a further low doped n-type second part of said drift layer on top of a first drift layer part grown in step 1) and on top of said emitter layer regions after carrying out step 2) , and a trench is after step 5) but before step 3) etched into said second drift layer part close to at least one of said emitter layer regions for allowing said metal layer to form an ohmic contact thereto through step 3). By using this regrowth technique the implantation may be carried out at comparatively low voltages without any need for any high resolution in the lithography, since the Schottky contact region between two adjacent emitter layer regions may be given a comparatively large lateral extension, but the emitter layer regions may nevertheless be positioned comparatively close to each other for efficiently pinching off the Schottky region. According to another preferred embodiment of the invention said emitter layer regions are created through said introduction in step 2) as laterally extending bars crossing each other and forming a bar pattern, and in step 3) said metal layer is applied on top of said bar pattern for forming an ohmic contact thereto at selected locations. The formation of such a bar pattern will make it possible to establish the ohmic contact in question at locations having a comparatively large mutual distance making the requirements of the processing steps lower. Further preferred characteristics and advantages of the invention will appear from the following description and the other dependent claims. BRIEF DESCRIPTION OF THE DRAWINGS With reference to the appended drawings, below follows a specific description of preferred embodiments of the invention cited as examples. In the drawings : Fig 1 is a schematic cross-section view of a Junction Barrier Schottky diode (JBS) according to a first preferred embodiment of the invention, Fig 2 is a view of the " regions in which the Schottky contact and the ohmic contact are formed of a JBS according to a second preferred embodiment of the invention, Fig 3 is a view corresponding to Fig 2 of said regions of a JBS according to a third preferred embodiment of the invention, Fig 4 is a view corresponding to Fig 2 of said regions of a JBS according to a fourth preferred embodiment of the invention, Fig 5 is a view from above of a JBS according to a fifth preferred embodiment of the invention, in which portions have been broken away for illustrating the structure of the device, Fig 6 is a view corresponding to Fig 2 of the diode according to Fig 5. DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS OF THE INVENTION A Junction Barrier Schottky diode made of SiC is schemati- cally illustrated in Fig 1. However, it should be noticed that the relative dimensions of the regions in this device shown in this figure have only been chosen for the sake of clearness of the drawing. The constitution of this diode will be clear from the following description of the method according to the invention used for producing it. This method also comprises masking and demasking steps as well as annealing steps after implantation, which however have nothing to do with the invention, and they will not be further described here. First of all a highly doped n-type substrate layer 1 and a low doped n-type drift layer 2 of SiC are epitaxially grown, preferably by Chemical Vapour Deposition, on top of each other. Any suitable donor, such as nitrogen and phosphor, may be used for obtaining the doping of these layers. Typical doping concentrations may be 10 15 -10 16 cm "3 and 10 18 -10 20 cm "3 for the drift layer and the substrate layer, respectively. After applying a suitable mask on top of the drift layer and appropriate patterning thereof a p- type dopant, such as boron or aluminium, is implanted into the drift layer in regions 3 laterally spaced for forming highly doped p-type emitter layer regions in said drift layer at a vertical distance from said substrate layer 1. In the case illustrated in Fig 1 a conventional acceleration energy for said implant is used, such as 300 keV, which results in comparatively shallow emitter layer regions having a depth of about 0,3 μm when Al is implanted and 0,6 μm for B, which is to be compared with the thickness of the drift layer 2, which is typically about 10-50 μ m. The doping concentration in the emitter layer regions may typically be 10 16 -10 20 cm ~3 . After an annealing step for making the dopants implanted electrically active and removal of the mask used, a metal layer 4 is applied on top of said drift layer 2 for making a Schottky contact 5 thereto in regions 6 between adjacent emitter layer regions and on top of the emitter layer regions 3 for making an ohmic contact 7 thereto. The ohmic contact and the Schottky contact form the anode of the diode, whereas a corresponding metal layer only indicated by a line 8 forms the cathode of the diode and is applied under the substrate layer. The function of this device is certainly clear from above, but it will be briefly repeated. In the forward conducting state of this diode it will thanks to the lower Schottky barrier (about 0,7-1 V) than the pn-barrier (about 2,2-2,5 V) function as a Schottky diode at lower current densities, so that the on-state losses will be lower than for a pn-diode. There will also at such lower current densities be no injection of minority charge carriers from the emitter layer regions into the drift layer, which means that switching losses due to reverse recovery charge will be neglectible. At higher current densities minority charge carriers will be injected from the emitter layer regions into the drift layer and the characteristic of the diode will come closer to that of a pn-diode. This is an advantage for the surge current capability of the device. In the reverse blocking state of the diode, accordingly, when the metal layer 4 is connected to a negative potential, the emitter layer regions will thanks to the low doping of said drift layer regions 6 easily deplete them and form a continuous depleted region therebetween, as indicated by the dashed line 9. This means that the diode will get the character of a conventional pn- diode and the field concentrations will be at the pn- junction and kept away from the Schottky contact 5. Thus, this diode will have a much lower leakage current at high voltages than a conventional Schottky diode. The doping concentration in the drift layer regions 2 and 6 may be varied continuously, so that the doping concentration is reduced when the distance to the surface is reduced. This facilitates spreading of the depleted reigon into the low doped region. The result will be a larger depleted region closest to the surface, making the shielding of the Schottky-contact easier, since a depleted region extending between the p-islands is formed earlier, i.e. at a lower voltage . It is illustrated in Fig 2 how a diode according to a second preferred embodiment of the invention may look, and this diode has only one difference with respect to the diode according to Fig 1, namely that a higher energy, namely about 4 MeV, has been used for implanting the p-type dopants for forming the emitter layer regions 3. Of course not only one energy is used, but the implantation is carried out while using different energies, for instance from 300 keV to 4 MeV for obtaining a box-like doping profile, which means a high doping concentration from the surface and deep thereunder. This means that these emitter layer regions will be much deeper, namely about 3 μm for B and 2 μm for Al , so that it is possible to arrange them more spaced apart, so that the resolution of lithography and masking required will be within a convenient range (in the order of 3 μm) . The method described with reference to Fig 1 would require a sub-micron resolution. The reason for the possibility to this greater distance between adjacent emitter layer regions 3 is that it will be easier to pinch off the Schottky contact region by depletion of the drift layer and separate the high electric fields from the Schottky contact region in the blocking state of the diode than if the emitter layer regions were shallower. It is illustrated in Fig 3 how a diode according to a third preferred embodiment of the invention may be produced by etching a trench 10 from above into said drift layer 2 at locations where emitter layer regions are to be formed before carrying out the implantation step. Implantation is then carried out, so that emitter layer region 3 will be formed by the walls 11 and the bottom 12 of the trench. The metal layer is then applied in the trench and onto the drift layer region 6 between the trenches for forming an ohmic contact 4 and a Schottky contact 5, respectively. This technique makes it possible to obtain the same advan- tages as in the embodiment shown in Fig 2, but the depth of the emitter layer regions with respect to the Schottky contact regions may be selected arbitrarily without any need of high implantation energies. A fourth preferred embodiment of the invention is illustrated in Fig 4, and in this method implantations are carried out for forming emitter layer regions being comparatively shallow in the drift layer 2. This is followed by the step of epitaxially regrowing a further low doped n- type second part 13 of said drift layer on top of said first drift layer 2 and on top of said emitter layer regions 3. Trenches 10 are then etched into the second drift layer part 13 close to the emitter layer regions 3. An implantation is then carried out into the trenches as in the method described with reference to Fig 3 for forming highly doped p-type walls and bottom of the trench, so that the bottom p-type doping of the trench so formed will reach to and join the respective emitter layer region 3 formed in the first drift layer part 2 for forming a continuous emitter layer region having two sub-regions 14 and 15. It would also be possible to only dope the bottom of the trench. The advantage with this technique is that it will be possible to arrange the emitter layer sub-regions 14 not that far away from each other, but still obtain a Schottky contact having a large lateral extension therebetween. This is an advantage with respect to lithographic and masking resolution requirements. It is also shown how highly doped p-type layers 16 may be buried in this way for taking field concentrations away from the periphery of the diode. Figs 5 and 6 illustrate schematically a fifth preferred embodiment of the invention, in which a diode is produced in a similar way to the one described with reference to Fig 4, but the emitter layer sub-regions 14 are created through said implantation as a laterally extending grid pattern. The different emitter layer regions are in this way in contact with each other by participating in forming said bar pattern, so it is only necessary to obtain an ohmic contact thereto at some selected locations for electrically connecting the metal layer 4 to all the emitter layer regions. As a consequence of this, it is illustrated in Fig 5 how a trench 10 corresponding to the trenches in Fig 4 is etched into the drift layer region for obtaining a framelike structure extending close to the periphery of said bar pattern. This will make the manufacturing process simpler. It is shown in Fig 5 in the upper left corner how the device looks as viewed from above, the following strip illustrates a horizontal cut between the metal layer 4 and the bars 14 and the rest of the figure shows a horizontal cut through the bars. It is emphasized that the metal layer 4 may consist of two different metals, one metal for the contact to the Schottky region and another metal adapted to form a good ohmic contact to the p+ emitter region layers in the trenches. The invention is of course not in any way restricted to the preferred embodiments described above, but many possibilities to modifications thereof will be apparent to a man with ordinary skill in the art without departing from the basic idea of the invention. The number of layers mentioned in the claims is a minimum number, and it is within the scope of the invention to arrange further layers in the devices or dividing any layer into several layers by selective doping of different regions thereof. Especially the drift layer may be composed by sub-layers of different doping concentrations, such as particularly low doping concentration close to the emitter layer regions for facilitating the depletion of the drift layer there. It is for instance also possible to arrange a highly doped buffer layer between the substrate and the drift layer. This buffer layer will have the same doping type, n or p, as the drift layer. "Substrate layer" is in this disclosure to be interpreted as the layer closest to the cathode of the layers mentioned and it has not to be a substrate layer in the strict sense of this word within this field, i.e. the layer from which the growth is started. The real substrate layer may be any of the layers and is mostly the thickest one, which may be the drift layer. The definition "Epitaxially growing on top of each other substrate layer" in the claims and in the description comprises also the case in which the epitaxial growth is started by growing on top of a substrate disc. However, the very substrate does not have to be grown epitaxially. The bar pattern or grid idea illustrated in Figs 5 and 6 may be modified by other net designs, such as squares, rectangles, hexagonal structures and so on. A "finger structure" would also be possible. The method claims are to be interpreted as not restricted to a growth of the layers located on top of each other in the order they are mentioned, but any other order of growth of these layers is within the scope of the claims. For instance, the method may be started from the drift layer and the so called substrate layer and the cathode may be grown at the very end of the method.

Claims: Claims 1. A method for producing a Junction Barrier Schottky diode (JBS) of SiC comprising the steps of: 1) epitaxially growing on top of each other the following semiconductor layers of SiC: a substrate layer (1) being highly doped according to a first type, n or p, and a drift layer (2) being low doped according to said first type, 2) introducing dopants of a second doping type, n or p, being opposite to said first type, into the drift layer in regions laterally spaced for forming highly doped emitter layer regions (3) in said drift layer at a vertical distance from said substrate layer, 3) applying a metal layer (4) on top of said drift layer for making a Schottky contact (5) thereto and on top of at least one of said emitter layer regions for making an ohmic contact (7) thereto, said ohmic contact and Schottky contact being connected together and forming the anode of the diode, the doping concentrations of said drift layer and said emitter layer regions, the depths of said emitter layer regions with respect to the location of the Schottky contact between two adjacent emitter layer regions and the lateral distance between these regions being selected to make the depletion of the drift layer in the blocking state form a continuous depleted region between the emitter layer regions and thereby screening off the high electrical field at the Schottky junction, which by this will not be exposed to high electrical fields. 2. A method according to claim 1, characterized in that it further comprises the step of: 4) etching a trench (10 " ) from above into said drift layer (2) at locations where said emitter layer regions (3) are to be formed before carrying out step 2), and that in step 2) said dopants are introduced into at least the bottom (12) of said trench for forming said emitter layer regions. 3. A method according to claim 1, characterized in that it further comprises the step of: 5) epitaxially regrowing a further second part (13) of said drift layer low doped according to said first type on top of a first drift layer part (2) grown in step 1) and on top of said emitter layer regions (3) after carrying out step 2) , and that after step 5) but before step 3) a trench (10) is etched into said second drift layer part close to at least one of said emitter layer regions for allowing said metal layer (4) to form an ohmic contact thereto through step 3) . 4. A method according to claim 3, characterized in that it comprises a step 6) of introducing dopants of said second type into at least the bottom (12) of said trench for forming an emitter layer region there, that the trench is etched while leaving a vertical distance between the bottom of the trench and the emitter layer region (14) formed through the introduction in step 2), and that the introduc- tion after said regrowth is carried out so that the highly doped layer (15) resulting from the introduction in step 6) in the bottom of the trench reaches the highly doped region (14) resulting from the introduction in step 2) . 5. A method according to any of claims 1-4, characterized in that said emitter layer regions are created through said introduction in step 2) ' as laterally extending bars (14) crossing each other and forming a bar pattern, and that in step 3) said metal layer is applied on top of said bar pattern for forming an ohmic contact thereto at selected locations. 6. A method according to any of claims 2-4, characterized in that dopants are introduced into the walls (11) of said trench (10) as well as into the bottom thereof for forming a continuous emitter layer region (3) extending around the trench. 7. A method according to any of claims 1-6, characterized in that said introduction is an implantation. 8. A method according to claim 7, characterized in that said dopants are in step 2) implanted by using an acceleration energy exceeding 1 MeV. 9. A method according to any of claims 1-8, characterized in that said first doping type is n. 10. A Schottky diode having on top of each other in the order mentioned a substrate layer (1) being highly doped according to a first type, n or p, a drift layer (2) being low doped according to said first type, both of SiC, and a metal layer (4) making a Schottky contact (5) to said drift layer, characterized in that it also comprises emitter layer regions (3) being highly doped according to a second doping type, n or p, being opposite to said first type and formed in said drift layer at a vertical distance from said substrate layer and making an ohmic contact (7) to said metal layer, said regions being laterally separated from each other by drift layer regions (6) , and that the doping concentrations of the drift layer and the emitter layer regions, the depths of the emitter layer regions with respect to the location " of the Schottky contact between two adjacent emitter layer regions and the lateral distance between these are selected to allow a depletion of the drift layer in the blocking state form a continuous depleted region (9) between the emitter layer regions and thereby screening off the high electrical field at the Schottky junction, which by this will not be exposed to high electrical fields. 11. A diode according to claim 10, characterized in that it comprises at least one trench (10) etched into said drift layer (2) at the location of an emitter layer region (3), that this emitter layer region forms the bottom of the trench, and that said metal layer (4) forms an ohmic contact to said emitter layer region at the bottom of the trench creating a vertical distance between the Schottky contact (5) next to said emitter layer region and the ohmic contact (7) to said emitter layer region in the bottom of the trench. 12. A diode according to claim 11, characterized in that it comprises such a trench (10) etched into said drift layer for each emitter layer region formed in the drift layer. 13. A diode according to claim 11 or 12, characterized in that said emitter layer region forming the bottom (12) of said trench also forms the walls (11) thereof. 14. A diode according to any of claims 11-13, characterized in that said emitter layer region (14) under said trench extends further laterally than the bottom of the trench (10) at least in one direction. 15. A diode according to claim 14, characterized in that it comprises an emitter layer sub-region (14) at a vertical distance from the bottom (12) of the trench extending further laterally at least in one direction than the bottom of the trench. 16. A diode according to any of claims 10-15, characterized in that said emitter layer regions (3) are formed by highly doped bars (14) extending substantially laterally in substantially the same plane and crossing each other for forming a bar pattern. 17. A diode according to claims 11 and 16, characterized in that said bar pattern is buried in said drift layer (2) at a vertical distance to Schottky contacts (5) of the diode, and that at least one trench (10) is etched into the drift layer for obtaining a metal on top of one emitter layer re- gion there and by that an ohmic contact of the metal to all emitter layer regions. 18. A diode according to claim 17, characterized in that it comprises a plurality of such trenches arranged at selected locations for forming ohmic contacts to said emitter layer region bar pattern at these locations. 19. A diode according to claim 17, characterized in that said trench (10) has a substantially continuous extension forming a frame extending close to the periphery of said bar pattern. 20. A diode according to any of claims 10-19, characterized in that said first doping type is n. 21. A diode according to any of claims 10-20, characterized in that the doping concentration in the drift layer (2) is reduced with a reduced distance to the surface thereof next to the metal layer (4) .

Inventors: BAKOWSKI MIETEK, BIJLENGA BO, DAHLQUIST FANNY, HARRIS CHRISTOPHER, HERMANSSON WILLY, LUNDBERG NILS, OESTLING MIKAEL, RAMBERG LENNART, ROTTNER KURT, SCHOENER ADOLF, ZDANSKY LENNART, BAKOWSKI, MIETEK, BIJLENGA, BO, DAHLQUIST, FANNY, HARRIS, CHRISTOPHER, HERMANSSON, WILLY, LUNDBERG, NILS, OESTLING, MIKAEL, RAMBERG, LENNART, ROTTNER, KURT, SCHOENER, ADOLF, ZDANSKY, LENNART
Applicants: ABB RESEARCH LTD, BAKOWSKI MIETEK, BIJLENGA BO, DAHLQUIST FANNY, HARRIS CHRISTOPHER, HERMANSSON WILLY, LUNDBERG NILS, OESTLING MIKAEL, RAMBERG LENNART, ROTTNER KURT, SCHOENER ADOLF, ZDANSKY LENNART, ABB RESEARCH LIMITED, BAKOWSKI, MIETEK, BIJLENGA, BO, DAHLQUIST, FANNY, HARRIS, CHRISTOPHER, HERMANSSON, WILLY, LUNDBERG, NILS, OESTLING, MIKAEL, RAMBERG, LENNART, ROTTNER, KURT, SCHOENER, ADOLF, ZDANSKY, LENNART
Application year: 1998
Main classification: H01L29
IPC codes: H01L21, H01L29