Process for manufacturing high-sensitivity capacitive and resonant integrated sensors, particularly accelerometers and gyroscopes, and relative sensors

Abstract: To increase the sensitivity of the sensor the suspended structure (40) forming the seismic mass has a tungsten core (26) which has high density. To manufacture it, a sacrificial layer (21) of silicon oxide, a polycrystal silicon layer (24), a tungsten layer (26) and a silicon carbide layer (28) are deposited in succession over a single crystal silicon body (1); the suspended structure (40) is defined by selectively removing the silicon carbide (28), tungsten (26) and polycrystal silicon (24) layers; spacers (30') of silicon carbide are formed which cover the uncovered ends of the tungsten layer (26); and the sacrificial layer (21) is then removed.

Description: The invention relates to a process for manufacturing high-sensitivity integrated sensors, particularly accelerometers and gyroscopes, and a relative sensor. As is known, the use of electromechanical micro-structures of semiconductor material, the manufacture of which utilizes microelectronics techniques, has recently been proposed for producing accelerometers and gyroscopes. These silicon micro-processing techniques make it possible to manufacture different types of angular velocity and acceleration sensors. In particular, at the present time prototypes operating according to the piezoelectric, piezoresistive, capacitive, threshold, resonant and tunnel effect principle of operation have been proposed. Reference will be made below to a sensor of differential capacitive type, i.e. one in which acceleration induces the movement of a seismic mass which constitutes the electrode common to two capacitors, electrically connected, thereby varying the two capacitances in opposite directions (differential variation of capacitance). The process provided by the invention can therefore also be used to manufacture an absolute capacitive sensor or a sensor of the resonant type. Historically, integrated micro-structures have been manufactured by preferably using the bulk micromachining technique in which a wafer of single-crystal silicon is processed on both faces. This technique is, however, incompatible with the process phases for forming components of the circuit which processes the signal picked up by the sensitive element, as required at present. It has therefore been proposed to use the technique of surface micromachining in which the sensitive element is made of polycrystal silicon and suspended structures are formed by depositing and successively removing sacrificial layers. This technique is compatible with the current integrated circuit manufacturing processes and is therefore preferred at present. The integrated micro-structures formed with this technique are, however, relatively insensitive to acceleration and angular velocity. In fact, having a mass of the order of a few tenths of a microgram, they suffer the effects of thermodynamic noise caused by the Brownian movement of the particles of the fluid in which they are immersed (see, for example, the article by T.B. Gabrielson entitled "Mechanical-Thermal Noise in Micromachined Acoustic and Vibration Sensors", IEEE Transactions on Electron Devices, vol. 40, No. 5, May 1993, pages 903 to 909). The upper limit to the mass obtainable with these structures is imposed by genuinely technological reasons; the deposition of very thick films does, in fact, involve extremely long wafer processing times and renders the surface of the wafer unsuitable for the successive operations such as the lapping of the wafers. US-A-5 072 288, to which the preamble of the independent claims refers, discloses a suspended structure formed by a tungsten core surrounded by an oxide layer. US-A-5 399 415 discloses a similar structure of tungsten, partially surrounded by dielectric material, including silicon oxide and/or silicon nitride. The object of the invention is therefore to provide a manufacturing process and a sensor manufactured according to the technique of surface micromachining which remedy the disadvantages of the known technique. The invention provides a process for manufacturing high-sensitivity capacitive and resonant integrated sensors, and a relative sensor, as defined in Claims 1 and 6 respectively. For an understanding of the invention a preferred embodiment thereof will now be described, purely by way of non-exhaustive example, with reference to the accompanying drawings in which: Figs. 1-10 show transverse sections through a wafer of semiconductor material in different zones of a capacitive accelerometric sensor, during different steps of the manufacturing process according to the invention; and Fig. 11 shows a top view of the sensor obtained through the present process. An embodiment of a capacitive-type accelerometric or gyroscopic sensor according to this process will now be described with reference to the accompanying drawings in which the thicknesses of the various layers of material are not to scale and some layers are not shown in all the drawings for reasons of representation. The manufacturing process initially comprises standard steps for the manufacture of integrated circuits; in particular, in the example shown, starting with a wafer 1 of P-type single-crystal silicon comprising N-type pockets 3, the components of the circuitry are formed; of these, Fig. 1 shows an NPN transistor 10 having an N + -type collector contact region 11, a P-type base region 12 and an N + -type emitter region 13. Furthermore, in the zone 15 of the wafer 1 intended to support the seismic mass (also called sensor zone 15 below), N + -type connection or "runner" regions 16, facing the surface 6 of the wafer 1 for the electrical connection of the seismic mass, are formed at the same time as the regions 11 and 13. A dielectric layer 17 for the opening of the contacts, such as BPSG (Boron Phosphorus Silicon Glass), is then deposited on the surface 6 of the wafer, obtaining the intermediate structure of Fig. 1. Then, by means of a suitable mask and selective removal step, the part of the dielectric layer 17 is removed from the sensor zone 15, obtaining the structure of Fig. 2. A silicon oxide layer 18 which, in the sensor zone 15, extends directly on the surface 6 of the wafer 1, is then deposited at low temperature; a silicon nitride layer 19 is then deposited at low pressure by means of CVD (Chemical Vapour Deposition), obtaining the structure of Fig. 3. Then, as shown in Fig. 4, which is on a larger scale than Figs. 1-3 and displaced so as to show the sensor zone 15 only, a sacrificial layer 21 of silicon oxide of approx. 2 µm thickness is deposited on the double layer 20 formed by the silicon oxide 18 and silicon nitride 19 layers; the sacrificial layer 21 is removed, together with the double layer 20 beneath, at the connection regions 16 where anchorages for the movable mass are to be formed (Fig. 4). There are then deposited, in succession, a thin polycrystal silicon layer 24 (approx. 0.35 µm thick for example) ; a first adhesive layer 25 (of titanium nitride for example), to facilitate the adhesion of the next layer to the layer 24; a tungsten layer 26 (1 µm thick for example); a second adhesive layer 27 (of titanium nitride for example); and then a first silicon carbide layer 28 (0.2 µm for example), thus obtaining the structure of Fig. 5. In the zones where the sacrificial layer 21 has been removed (above the connection regions 16) the layers 24, 26 and 28 thus form anchorages 41 for the seismic mass. The suspended micro-structure 40 is then defined, by masking and anisotropic etching the first carbide layer 28, the tungsten layer 26 and the polycrystal silicon layer 24 as far as the sacrificial layer 21, thus obtaining the structure of Fig. 6, in which (as in the subsequent ones) the adhesive layers 25 and 27 are not shown, for greater clarity. Then, Fig. 7, a second silicon carbide layer 30 is deposited, approx. 0.2 µm thick, which covers and forms a single layer with the first silicon carbide layer 28 when this is present, even though, in Fig. 7, the layers 28 and 30 have been shown separately for reasons of representation; a step of anisotropic etching of the carbide is then carried out so as to completely remove the portions of the layer 30 in direct contact with the sacrificial layer 21 and leaving the portions which cover the uncovered ends of the tungsten layer 30, so as to form "spacers" of silicon carbide denoted by 30' in Fig. 8. The sacrificial layer 21 and the silicon nitride layer 20 are then removed from the zone of the circuitry; the structure is then masked to form the openings of the contacts of the circuitry and of the sensitive element through the layer 17; a metallic layer is deposited and defined to form the contacts 33 (visible in Fig. 9 which relates to a section similar to those of Figs. 1-3, also showing part of the control circuit) and the metallic interconnections; a dielectric material passivation layer 34 is deposited and thus removed in the zone of the contact pad (to permit the electrical contacting of the device) and in the sensor zone 15, thus obtaining the structure of Fig. 9. Then, by a suitable mask, the sacrificial layer 21 is removed in hydrofluoric acid in the sensor zone 15 while the polysilicon dielectric layer 24 underneath, the carbide layer 28 on the top and the spacers 30' at the sides protect the tungsten layer 26 from the etching. A suspended structure 40 (Fig. 10) is thus obtained, the external profile of which is shown in Fig. 11 and which is anchored to the wafer 1 by means of the anchorage regions 41. In particular, Fig. 11, the suspended structure 40 is H-shaped with a plurality of transverse walls 42 defining the movable electrodes of the capacitive sensor which are interleaved in a comb-like manner with respective fixed transverse walls 43, defining the fixed electrodes. The structure is therefore equivalent to a capacitor formed by two capacitors in series, each formed by a plurality of elementary capacitors connected in parallel. In per se known manner the movable electrodes 42 and the fixed electrodes 43 are biased at different voltages so that when the suspended structure 40 is subjected to an acceleration the consequent change of distance between the movable electrodes and the fixed ones may be detected as a variation of capacitance. The manufacture of the suspended mass of semiconductor material with a tungsten core, as described, gives the sensor high sensitivity. In fact, tungsten has high density (19.3 g/cm 3 ) with respect to polycrystal or amorphous silicon (2.33 g/cm 3 ). Consequently, a tungsten layer 1 µm thick is virtually equivalent, from the point of view of the mechanical properties, to a 10 µm polysilicon layer. On the other hand, the deposition by CVD of a tungsten of the thickness quoted does not have the disadvantages which a silicon layer ten times thicker does have. The sensor obtained in this way thus has high sensitivity and yet benefits from the advantages typical of "surface micromachining" technology. In particular, the manufacturing process is simple to implement, using steps typical of microelectronics, readily controllable and repeatable as well as economical; in fact despite the need to deposit several layers as well as adhesion layers, a single mask is sufficient to form the suspended structure. Finally it will be clear that numerous modifications and variants may be introduced. In particular, the process can also be applied to sensors of a different type operating according to the capacitive or resonant principle of operation; the components of the circuitry integrated with the sensor may be both bipolar and MOS; the conductivity of the conductive regions may be the opposite of that shown and the protective and/or adhesive materials may be replaced by others which are equivalent as regards the functions desired.

Claims: A process for manufacturing integrated sensors, comprising the step of forming a temporary support region (21) of sacrificial material over a semiconductor material body (1) and a structure (40) comprising a tungsten region (26) over said temporary support region and then removing said temporary support region, thereby forming a suspended structure characterized in that said step of forming said structure (40) comprises the steps of: depositing a polycrystal silicon layer (24) over said sacrificial layer (21); depositing a tungsten layer (26) over said polycrystal silicon layer; depositing a first silicon carbide layer (28) over said tungsten layer; defining said structure (40) by selectively removing said silicon carbide (28), tungsten (26) and polycrystal silicon (24) layers; and forming spacer elements (30') of silicon carbide laterally with respect to uncovered ends of said tungsten layer (26). A process according to Claim 1, characterized in that said step of forming spacer elements (30') comprises the steps of depositing a second silicon carbide layer (30) over and laterally with respect to said structure (40) and etching said second silicon carbide layer anisotropically. A process according to Claim 1 or 2, characterized in that a first (25) and, respectively, a second (27) adhesive layer are deposited before depositing a polycrystal silicon layer (24) and before depositing a first silicon carbide layer (28). A process according to any of Claims 1-3, characterized in that a step of forming electrical connection regions (16) inside said semiconductor material body (1) is carried out before said step of forming a support region (21); in that said step of forming a support region comprises the step of depositing said sacrificial layer (21) and in that the step of selectively removing portions of said sacrificial layer (21) at said electrical connection regions (16) is carried out before depositing said polycrystal silicon layer (24). A process according to Claim 4, characterized in that a step of depositing a silicon nitride layer (20) is carried out before said step of depositing said sacrificial layer (21); in that said sacrificial layer (21) is of silicon oxide and in that the step of selectively removing said silicon nitride layer (20) at said electrical connection regions (16) is carried out after said step of selectively removing portions of said sacrificial layer (21). An integrated sensor, comprising a suspended structure (40) over a semiconductor material body (1) and connected to said semiconductor material body through anchorage portions (41), wherein said suspended structure (40) comprises a tungsten region (26) surrounded by a protective structure (24, 28, 30'), characterized in that said protective structure comprises a region of polycrystal silicon (24) disposed underneath said tungsten region (26) and silicon carbide regions (28, 30') over and at the sides of said tungsten region. A sensor according to Claim 6, characterized in that a first adhesive layer (25) is present between said tungsten region (26) and said region of polycrystal silicon (24) and in that a second adhesive layer (27) is present between said tungsten region and said silicon carbide region (28). A sensor according to any of Claims 6, 7, characterized in that said anchorage portions (41) comprise a tungsten core (26) and in that it comprises electrical connection regions (16) inside said semiconductor material body (1) underneath and electrically connected to said anchorage portions (41). A sensor according to any of Claims 6-8, characterized in that said semiconductor material body (1) is covered by a silicon nitride layer (20) with the exception of said anchorage portions (41).

Inventors: FERRARI PAOLO, FERRERA MARCO, MONTANINI PIETRO, VIGNA BENEDETTO, FERRARI, PAOLO, FERRERA, MARCO, MONTANINI, PIETRO, VIGNA, BENEDETTO
Applicants: ST MICROELECTRONICS SRL, STMICROELECTRONICS S.R.L.
Application year: 1997
Main classification: H01L21
IPC codes: G01P15, G01P9, G01C19, H01L21, H01L29, B81B3