Polyphenylene oligomers and polymers

Abstract: The present invention refers to aromatic monomers containing at least one cyclopentadienone moiety and at least one acetylene moiety and oligomers, uncured polymers and cured polymers comprising the reaction product thereof.

Description: This invention relates to polyphenylene oligomers and polymers and processes for preparing and using the same. Such oligomers and polymers may be useful as dielectric resins in microelectronics fabrication. Polymer dielectrics may be used as insulating layers between various circuits and layers within circuits in microelectronic devices such as integrated circuits, multichip modules, and laminated circuit boards. The microelectronics fabrication industry is moving toward smaller geometries in its devices to enable lower power and faster speeds. As the conductor lines become finer and more closely packed, the requirements of the dielectrics between such conductors become more stringent. While polymer dielectrics often provide lower dielectric constants than inorganic dielectrics such as silicon dioxide, they often present challenges to process integration during fabrication. For example, to replace silicon dioxide as a dielectric in integrated circuits, the dielectric must be able to withstand processing temperatures during metallization and annealing steps of the process. Preferably, the dielectric material should have a glass transition temperature greater than the processing temperature. The dielectric must also retain the desirable properties under device use conditions. For example, the dielectric should not absorb water which may cause an increase in the dielectric constant and potential corrosion of metal conductors. For some integration schemes, the oligomer should preferably planarize and gap fill a patterned surface when applied by conventional application techniques such as spin coating. Currently, polyimide resins are one class of materials which are employed as thin film dielectrics in the electronics industry. However, polyimide resins may absorb water and hydrolyze which can lead to circuit corrosion. Metal ions may migrate into the dielectric polyimide layer requiring a barrier layer between the metal lines and polyimide dielectric. Polyimides may exhibit poor planarization and gap fill properties. Non-fluorinated polyimides may exhibit undesirably high dielectric constants. Kumar and Neenan, in Macromolecules, 1995, 28, pp 124-130, disclose numerous polyphenylenes made from biscyclopentadienones and bisacetylenes. They teach that the polyphenylenes have potential as photodefineable organic dielectrics. Wrasidlo and Augl, in J. Polym. Sci., Part B (1969), 7 (7), 519-523, disclose the copolymerization of 1,4-bis(phenylethynyl)benzene with 3,3'-(1,4-phenylene)-bis(2,4,5-triphenylpentadienone). They report a soluble, yellow, infusible polymer was obtained. The materials described in Kumar and Wrasidlo are soluble but may not be suitable for some uses such as spin coating to fill gaps because the materials were polymerized to exhaustion of the cyclopentadienone moieties which provides relatively high molecular weights. The molecular weight may be too high to permit application by spin coating over a patterned surface containing gaps to be filled by the dielectric. Based on the reported glass transition temperatures, such materials may not be able to withstand the processing desired for interlayer dielectrics in integrated circuits. In U. S. Patents 5,334,668; 5,236,686; 5,169,929; and 5,338,823, Tour describes several methods of preparing cross-linkable polyphenylene compositions for the preparation of glassy carbon. The polyphenylenes are made by polymerizing 1-bromo-4-lithiobenzene to form a brominated polyphenylene and then coupling substituted phenylacetylenes, such as phenylacetylenyl phenyl acetylene, to the residual bromines. The polyphenylenes have melting points around 200°C prior to crosslinking. It would be desirable to provide a polymer dielectric to the microelectronics fabrication industry which provides a reliably low dielectric constant, high thermal stability and a high glass transition temperature and which preferably, permits application by spin coating to planarize and fill gaps on a patterned surface. In a first aspect, the present invention is a polyfunctional compound selected from the general formula: or wherein R 1 and R 2 are independently H or an unsubstituted or inertly-substituted aromatic moiety and Ar 4 is an unsubstituted or inertly-substituted aromatic moiety. According to a second aspect the present invention refers to oligomers, uncured polymers and cured polymers comprising the reaction product of at least one aromatic monomer containing at least one cyclopentadienone moiety and at least one acetylene moiety, particularly to oligomers, uncured polymers and cured polymers comprising the reaction product of the above defined polyfunctional compound. An advantage of such a reaction product is that it may gap fill and planarize patterned surfaces, and as cured have high thermal stability, a high glass transition temperature and a low dielectric constant. A reactive group, as used herein, is defined as a cyclopentadienone or acetylene group. An oligomer, as used herein, is defined as a reaction product of two or more monomer units of the invention which will gap fill, that is, fill a rectangular trench which is one micrometer deep and one half micrometer across without leaving a void when cured. An uncured polymer, as used herein, is defined as a reaction product of monomers of the invention which no longer gap fills but which contains significant unreacted cyclopentadienone or acetylene functionality. A cured polymer, as used herein, is defined as a reaction product of monomers of the invention which contains no significant unreacted cyclopentadienone or acetylene functionality. Significant unreacted cyclopentadienone or acetylene functionality requires that said moieties be reactive to further advance the polymerization. High thermal stability, a high glass transition temperature, a low dielectric constant and the ability to gap fill and planarize patterned surfaces make the compositions of the invention suitable as polymer dielectrics in microelectronics fabrication. In particular, the combination of low dielectric constant, high thermal stability and high glass transition temperature permit the use of the compositions of the invention as interlayer dielectrics in integrated circuits. Preferably, the oligomers and polymers and corresponding starting monomers of the present invention are: I. Polyphenylene oligomers and polymers represented by the formula: wherein Ar 4 is an aromatic moiety or an inertly-substituted aromatic moiety, R 1 , R 2 are as previously defined and x is an integer from 1 to 1000. Preferably, x is from 1 to 50 and more preferably from 1 to ten, as can be prepared by the reaction of the cyclopentadienone functionality and the acetylene functionality of a polyfunctional compound of the general formula: wherein R 1 , R 2 and Ar 4 are as defined previously. II. Polyphenylene oligomers and polymers represented by the formula: wherein EG is represented by any one of the formulas: wherein R 1 , R 2 , Ar 4 and x are as defined previously, as can be prepared by the reaction of the cyclopentadienone functionality and the acetylene functionality of a polyfunctional compound of the general formula: wherein R 1 , R 2 , and Ar 4 are as defined previously. The definition of aromatic moiety includes phenyl, polyaromatic and fused aromatic moieties. Inertly-substituted means the substituent groups are essentially inert to the cyclopentadienone and acetylene polymerization reactions and do not readily react under the conditions of use of the cured polymer in microelectronic devices with environmental species such as water. Such substituent groups include, for example, F, Cl, Br, -CF 3 , -OCH 3 , -OCF 3 , -O-Ph and alkyl of from one to eight carbon atoms, cycloalkyl of from three to eight carbon atoms. For example, the moieties which can be unsubstituted or inertly-substituted aromatic moieties include: wherein Z can be: -O-, -S-, alkylene, -CF 2 -, -CH 2 -, -O-CF 2 -, perfluoroalkyl, perfluoroalkoxy, wherein each R 3 is independently -H, -CH 3 , -CH 2 CH 3 , -(CH 2 ) 2 CH 3 or Ph. Ph is phenyl. While not intended to be bound by theory, it is believed that the polyphenylene oligomers and polymers are formed through the Diels Alder reaction of the cyclopentadienone groups with the acetylene groups when the monomers in solution are heated. These oligomers may contain cyclopentadienone and/or acetylene end groups and/or pendant groups. Upon further heating of the solution or an article coated with the solution, additional chain extension can occur through the Diels Alder reaction of the remaining cyclopentadienone end groups with the remaining acetylene groups resulting in an increase in molecular weight. Depending on the temperature used, reaction of the acetylene groups with each other may also occur. The oligomers and polymers are shown in the structures as having either cyclopentadienone and/or acetylene end groups and/or pendant groups. In general, the end groups will depend on the relative concentration of cyclopentadienone to Diels Alder reactive acetylene functionality employed in the reaction, with a stoichiometric excess of cyclopentadienone functionality giving more cyclopentadienone end groups and a stoichiometric excess of Diels Alder reactive acetylene functionality giving a greater proportion of acetylene end groups. A feature of a preferred embodiment of the invention is the halting of the polymerization reaction prior to the reaction of all the cyclopentadienone moieties. The oligomer may then be applied to a surface prior to advancing the polymerization to react the balance of the cyclopentadienone moieties. In such an oligomerized state the oligomer may planarize and gap fill when applied to a patterned surface. Preferably, at least ten percent of the cyclopentadienone moieties are unreacted. Most preferably, at least twenty percent of the cyclopentadienone moieties are unreacted. One may determine the percentage of unreacted cyclopentadienone moieties by spectral analysis. The cyclopentadienone moiety is highly colored in the visible spectrum with a distinct red or purple color which fades as the cyclopentadienone moieties react. Planarize, as used herein, means that an isolated feature may be planarized by seventy percent or more, preferably by eighty percent or more and most preferably by ninety percent or more. The percentage or degree of planarization is calculated from the equation: Percent Planarization = (1-t s /t m ) × 100 when a layer of oligomer is coated over an isolated square line, one micrometer wide and one micrometer high at an average thickness of two microns and t s is the height of the oligomer or polymer over the feature above the average height of the oligomer or polymer and t m is the height of the feature (one micrometer). Use of this definition is illustrated, for example, in Proceedings of IEEE , Vol. 80, No. 12, December, 1992, at page 1948. While not being bound by theory, the preparation of the polyphenylene polymer can be represented generally as follows by example of the reaction of a dicyclopentadienon with a diacetylenic compound for means of simplicity. The monomers of the present invention will react similarly: wherein R 1 , R 2 , Ar 1 , Ar 2 (= Ar 4 ) and x are as defined previously. Furthermore, while not specifically indicated in the structures, some of the carbonyl-bridged species may be present in the oligomers prepared, depending on the specific monomer and reaction conditions used. Upon further heating, the carbonyl bridging species will be essentially fully converted to the aromatic ring system. When more than one acetylene-containing monomer is used, the oligomers and polymers formed are random, while the structures as drawn may suggest blocks are formed. The Diels Alder reaction between the cyclopentadienone and acetylene functionality can take place to form either a para- or meta- attachment on the phenylated ring. Any inert organic solvent which can dissolve the monomers to the appropriate degree and can be heated to the appropriate polymerization temperature either at atmospheric, subatmospheric or superatmospheric pressure could be used. Examples of suitable solvents include mesitylene, pyridine, triethylamine, N-methylpyrrolidinone (NMP), methyl benzoate, ethyl benzoate, butyl benzoate, cyclopentanone, cyclohexanone, cycloheptanone, cyclooctanone, cyclohexylpyrrolidinone, and ethers or hydroxy ethers such as dibenzylethers, diglyme, triglyme, diethylene glycol ethyl ether, diethylene glycol methyl ether, dipropylene glycol methyl ether, dipropylene glycol dimethyl ether, propylene glycol phenyl ether, propylene glycol methyl ether, tripropylene glycol methyl ether, toluene, mesitylene, xylene, benzene, dipropylene glycol monomethyl ether acetate, dichlorobenzene, propylene carbonate, naphthalene, diphenyl ether, butyrolactone, dimethylacetamide, dimethylformamide and mixtures thereof. The preferred solvents are mesitylene, N-methylpyrrolidinone (NMP), gamma-butyrolactone, diphenylether and mixtures thereof. Alternatively, the monomers can be reacted in one or more solvents at elevated temperature and the resulting solution of oligomers can be cooled and formulated with one or more additional solvents to aid in processing, for example. In another approach, the monomers can be reacted in one or more solvents at elevated temperature to form oligomers which can then be isolated by precipitation into a non-solvent or by some other means of solvent removal to give essentially solvent-free oligomers. These isolated oligomers can then be redissolved in one or more different solvents and the resultant solutions can be used for processing. The conditions under which the polymerization reaction is most advantageously conducted are dependent on a variety of factors, including the specific reactants and solvent. In general, the reaction is conducted under a non-oxidizing atmosphere such as a blanket of nitrogen or other inert gases. The reaction can be conducted neat (without solvent or other diluents). However, in order to ensure homogeneous reaction mixtures and to moderate exothermic reactions at such temperatures, it is often desirable to use inert organic solvents, such as those mentioned previously, for the reactants. The time and temperature most advantageously employed will vary depending on the specific monomers employed, particularly their reactivity, the specific oligomer or polymer desired, and the solvent. In general, the reaction to form the oligomers is conducted at a temperature of from 150°C to 250°C and for a time of from 60 minutes to 48 hours. At this point the oligomers may be isolated from the reaction mixture or used as is in the coating of a surface. Additional chain extension (advancement) may be conducted at a temperature of from 100°C to 475°C, preferably from 200°C to 450°C and for a time of from 1 minute to 10 hours, more preferably from 1 minute to 1 hour. An uncured or cured polymer may be used for coating a surface by casting from a solvent. While such a polymer may not gap fill or planarize sufficiently, it may still be useful in a damascene process. The concentrations at which the monomers are most advantageously employed in the organic liquid reaction medium are dependent on a variety of factors including the specific monomers and organic liquid employed and the oligomer and polymer being prepared. In general, the monomers are employed in a cyclopentadienone to acetylene stoichiometric ratio of from 1:1 to 1:3, preferably at a 1:1 to 1:2 ratio. The oligomer or polymer can be directly cast as a film, applied as a coating or poured into a non-solvent to precipitate the oligomer or polymer. Water, methanol, ethanol and other similar polar liquids are typical non-solvents which can be used to precipitate the oligomer. Solid oligomer or polymer may be dissolved and processed from a suitable solvent. If the oligomer or polymer is obtained in solid form, it may be further processed using conventional compression molding techniques or melt spinning, casting or extrusion techniques provided the solid precursor has a sufficiently low glass transition temperature. More commonly, the oligomer or polymer is processed directly from the organic liquid reaction solution and the advantages of the present invention are more fully realized in that instance. Since the oligomer or polymer is soluble in the organic liquid reaction medium, the organic solution of the oligomer can be cast or applied and the solvent evaporated. Molecular weight increases (chain extension or advancement), and in some examples, crosslinking, to form the final polymer, occurs upon subsequent exposure to a sufficiently high temperature. The polymer of this invention may be used as one or more of the insulating or dielectric layers in single or multiple layer electrical interconnection architectures for integrated circuits, multichip modules, or flat panel displays. The polymer of the invention may be used as the sole dielectric in these applications or in conjunction with other organic polymers or inorganic dielectrics, such as silicon dioxide, silicon nitride, or silicon oxynitride. For example, coatings of oligomers and polymers of the invention, such as an electrically insulating coating used to fabricate interconnect structures on an electronic wafer, are easily prepared by spin-casting a film of, or otherwise coating a substrate with, the organic liquid solution of the oligomer or polymer and then evaporating the solvent and exposing the oligomer or polymer to temperatures sufficient to advance the oligomer or polymer to higher molecular weight, and in the most preferred examples, to a crosslinked polymer with high glass transition temperature. The polymers of the present invention are particularly useful as a low dielectric constant insulating material in the interconnect structure of an integrated circuit, such as those fabricated with silicon or gallium arsenide. An integrated circuit would typically have multiple layers of metal conductors separated by one or more insulating materials. The polymer material of this invention can be used as insulation between discrete metal conductors in the same layer, and/or between conductor levels of the interconnect structure. The polymers of the present invention can also be used in combination with other materials, such as SiO 2 or Si 3 N 4 , in a composite interconnect structure. For example, the oligomers and polymers of the invention may be used in the process for making integrated circuit devices taught in U.S. Patent 5,550,405; U.S. Patent 5,591,677 and Hayashi et al., 1996 Symposium on VLSI Technology Digest of Technical Papers, pg 88-89. The oligomers and polymers of the invention may be substituted for the BCB or other resin disclosed in the process disclosed. The oligomer, uncured polymer or polymer of the invention may be used as a dielectric in the above taught processes or similar processes to fabricate an integrated circuit article comprising an active substrate containing transistors and an electrical interconnect structure containing patterned metal lines separated, at least partially, by layers or regions of the composition of the invention. The polymers of the present invention are also useful to planarize materials such as silicon wafers used in semiconductors to allow the production of smaller (higher density) circuitry. To achieve the desired planarity, a coating of the oligomer or polymer is applied from solution such as by spin coating or spray coating, to flow so as to level any roughness on the surface of the substrate. These methods are illustrated by such references as Jenekhe, S.A., Polymer Processing to Thin Films for Microelectronic Applications in Polymers for High Technology , Bowden et al. ed., American Chemical Society 1987, pp. 261-269. In the fabrication of microelectronic devices, relatively thin defect-free films, generally from 0.01 to 20, preferably from 0.1 to 2 micrometer thickness, can be deposited on a surface of a substrate for example silicon, silicon-containing materials, silicon dioxide, alumina, copper, silicon nitride, aluminum nitride, aluminum, quartz, and gallium arsenide. Coatings are conveniently prepared from solutions of an oligomer having a molecular weight, for example, of 3000 M n or less and 5200 M w or less, in a variety of organic solvents such as xylene, mesitylene, NMP, gamma-butyrolactone and n-butyl acetate. The dissolved oligomer or polymer can be cast onto a substrate by common spin and spray coating techniques. The thickness of the coating may be controlled by varying the percent solids, the molecular weight, and thus the viscosity of the solution as well as by varying the spin speed. The polyphenylene oligomer or polymer in this invention may be applied either by dip coating, spray coating, extrusion coating, or more preferably by spin coating. For all cases, the environment around the substrate and coating prior to cure may be controlled with respect to temperature and humidity. In particular, NMP may absorb water from the water vapor in the ambient air. When dissolved in NMP, one should protect the solution from moist air and cast the film in a low humidity environment. When using NMP as the solvent, preferably, the relative humidity is controlled at less than thirty percent and the temperature is controlled at 27°C or greater. The coating may be cured after application either with one or more hot plates, an oven, or a combination of these tools. Adhesion promoters, such as those based on silane chemistry, may be applied to the substrate prior to the application of the polyphenylene oligomer or polymer solution, or added directly to the solution. The oligomers and polymers of the present invention can be used in either a "damascene" metal inlay or subtractive metal patterning scheme for fabrication of integrated circuit interconnect structure. Processes for fabricating damascene lines and vias are known in the art. See for example U.S. Patents 5,262,354 and 5,093,279. Patterning of the material may be done with typical reactive ion etch procedures using oxygen, argon, nitrogen, helium, carbon dioxide, fluorine containing compounds, or mixtures of these and other gases, using a photoresist "softmask", such as an epoxy novolac, or a photoresist in combination with an inorganic "hardmask" such as SiO 2 , Si 3 N 4 , or metal. The oligomers and polymers may be used in conjunction with Al, Al alloys, Cu, Cu alloys, gold, silver, W, and other common metal conductor materials (for conductive lines and plugs) deposited by physical vapor deposition, chemical vapor deposition, evaporation, electroplating, electroless deposition, and other deposition methods. Additional metal layers to the basic metal conductors, such as tantalum, titanium, tungsten, chromium, cobalt, their alloys, or their nitrides, may be used to fill holes, enhance metal fill, enhance adhesion, provide a barrier, or modify metal reflectivity. Depending on the fabrication architecture, either metal or the dielectric material of this invention may be removed or planarized using chemical-mechanical polishing techniques. Multichip modules on active or passive substrates such as silicon, silicate glass, silicon carbide, aluminum, aluminum nitride, or FR-4, may be constructed with the polyphenylene polymer of this invention as a dielectric material. Flat panel displays on active or passive substrates such as silicon, silicate glass, silicon carbide, aluminum, aluminum nitride, or FR-4, may be constructed with the polyphenylene polymer of this invention as a dielectric material. The oligomers and polymers of the present invention may further be used as protective coatings on integrated circuit chips for protection against alpha particles. Semiconductor devices are susceptible to soft errors when alpha particles emitted from radioactive trace contaminants in the packaging or other nearby materials strike the active surface. An integrated circuit can be provided with a protective coating of the polymer of the present invention. Typically, an integrated circuit chip would be mounted on a substrate and held in place with an appropriate adhesive. A coating of the polymer of the present invention provides an alpha particle protection layer for the active surface of the chip. Optionally, additional protection is provided by encapsulant made of, for example, epoxy or a silicone. The polymers of the present invention may also be used as a substrate (dielectric material) in circuit boards or printed wiring boards. The circuit board made up of the polymer of the present invention has mounted on its surface patterns for various electrical conductor circuits. The circuit board may include, in addition to the polymer of the present invention, various reinforcements, such as woven nonconducting fibers, such as glass cloth. Such circuit boards may be single sided, as well as double sided or multilayer. The polymers of the present invention may also be useful in reinforced composites in which a resin matrix polymer is reinforced with one or more reinforcing materials such as a reinforcing fiber or mat. Representative reinforcing materials include fiber glass, particularly fiber glass mats (woven or non-woven); graphite, particularly graphite mat (woven or non-woven); Kevlar™; Nomex™; and glass spheres. The composites can be made from preforms, dipping mats in monomer or oligomer, and resin transfer molding (where the mat is placed into the mold and monomer or prepolymer is added and heated to polymerize). Layer(s) of the polymers of the present invention may be patterned by such means as wet-etching, plasma-etching, reactive-ion etching (RIE), dry-etching, or photo laser ablation, such as illustrated by Polymers for Electronic Applications , Lai, CRC Press (1989) pp. 42-47. Patterning may be accomplished by multilevel techniques in which the pattern is lithographically defined in a resist layer coated on the polymeric dielectric layer and then etched into the bottom layer. A particularly useful technique involves masking the portions of oligomer or polymer not to be removed, removing the unmasked portions of oligomer or polymer, then curing the remaining oligomer or polymer, for example, thermally. In addition, the oligomer of the present invention may also be employed to make shaped articles, films, fibers, and foams. In general, techniques well-known in the art for casting oligomers or polymers from solution may be employed in the preparation of such products. In preparing shaped polyphenylene oligomer or polymer articles, additives such as fillers, pigments, carbon black, conductive metal particles, abrasives and lubricating polymers may be employed. The method of incorporating the additives is not critical and they can conveniently be added to the oligomer or polymer solution prior to preparing the shaped article. The liquid compositions containing the oligomer or polymer alone or also containing fillers, may be applied by any of the usual techniques (doctoring, rolling, dipping, brushing, spraying, spin coating, extrusion coating or meniscus coating) to a number of different substrates. If the polyphenylene oligomer or polymer is prepared in solid form, the additives can be added to the melt prior to processing into a shaped article. The oligomer and polymer of the present invention can be applied to various substrates by a number of methods such as, solution deposition, liquid-phase epitaxy, screen printing, melt-spinning, dip coating, roll coating, spinning, brushing (for example as a varnish), spray coating, powder coating, plasma-deposition, dispersion-spraying, solution-casting, slurry-spraying, dry-powder-spraying, fluidized bed techniques, welding, explosion methods including the Wire Explosion Spraying Method and explosion bonding, press bonding with heat, plasma polymerization, dispersion in a dispersion media with subsequent removal of dispersion media, pressure bonding, heat bonding with pressure, gaseous environment vulcanization, extruding molten polymer, hot-gas welding, baking, coating, and sintering. Mono- and multilayer films can also be deposited onto a substrate using a Langmuir-Blodgett technique at an air-water or other interface. When applying the oligomer or polymer of the invention from solution, specific conditions of polymerization and other processing parameters most advantageously employed are dependent on a variety of factors, particularly the specific oligomer or polymer being deposited, the conditions of coating, the coating quality and thickness, and the end-use application, with the solvent being selected accordingly. Representative solvents which can be employed are those described previously. Substrate(s) which can be coated with the oligomer or polymer of the invention can be any material which has sufficient integrity to be coated with the monomer, oligomer or polymer. Representative examples of substrates include wood, metal, ceramics, glass, other polymers, paper, paper board cloth, woven fibers, non-woven fiber mats, synthetic fibers, Kevlar™, carbon fibers, gallium arsenide, silicon and other inorganic substrates and their oxides. The substrates which are employed are selected based on the desired application. Exemplary materials include glass fibers (woven, non-woven or strands), ceramics, metals such as aluminum, magnesium, titanium, copper, chromium, gold, silver, tungsten, stainless steel, Hastalloy™, carbon steel, other metal alloys and their oxides, and thermoset and thermoplastic polymers such as epoxy resins, polyimides, perfluorocyclobutane polymers, benzocyclobutane polymers, polystyrene, polyamides, polycarbonates, polyarylene ethers and polyesters. The substrate can be the polymers of the present invention in cured form. The substrate may be of any shape, and the shape is dependent on the end-use application. For instance, the substrate may be in the form of a disk, plate, wire, tubes, board, sphere, rod, pipe, cylinder, brick, fiber, woven or non-woven fabric, yarn (including commingled yarns), ordered polymers, and woven or non-woven mat. In each case the substrate may be hollow or solid. In the case of hollow objects, the polymer layer(s) is on either or both the inside or outside of the substrate. The substrate may comprise a porous layer, such as graphite mat or fabric, glass mat or fabric, a scrim, and particulate material. The oligomers or polymers of the invention adhere directly to many materials such as compatible polymers, polymers having a common solvent, metals, particularly textured metals, silicon or silicon dioxide, especially etched silicon or silicon oxides, glass, silicon nitride, aluminum nitride, alumina, gallium arsenide, quartz, and ceramics. However, when increased adhesion is desired, a material may be introduced to improve adhesion. Representative examples of such adhesion promoting materials are silanes, preferably organosilanes such as trimethoxyvinylsilane, triethoxyvinylsilane, hexamethyldisilazane [(CH 3 ) 3 -Si-NH-Si(CH 3 ) 3 ], or an aminosilane coupler such as γ-aminopropyltriethoxysilane, or a chelate such as aluminum monoethylacetoacetatedi-isopropylate [((isoC 3 H 7 O) 2 Al(OCOC 2 H 5 CHCOCH 3 ))]. In some cases, the adhesion promoter is applied from 0.01 weight percent to 5 weight percent solution, excess solution is removed, and then the polyphenylene applied. In other cases, for example, a chelate of aluminum monoethylacetoacetatedi-isopropylate, can be incorporated onto a substrate by spreading a toluene solution of the chelate on a substrate and then baking the coated substrate at 350°C for 30 minutes in oxygen to form a very thin (for example 5 nanometer) adhesion promoting layer of aluminum oxide on the surface. Other means for depositing aluminum oxide are likewise suitable. Alternatively, the adhesion promoter, in an amount of, for example, from 0.05 weight percent to 5 weight percent based on the weight of the monomer, can be blended with the monomer before polymerization, negating the need for formation of an additional layer. Adhesion can also be enhanced by surface preparation such as texturizing (for example, scratching, etching, plasma treating, or buffing) or cleaning (for example, degreasing or sonic cleaning); otherwise treating (for example, plasma, solvent, SO 3 , plasma glow discharge, corona discharge, sodium, wet etching, or ozone treatments) or sand blasting the substrate's surface or using electron beam techniques such as 6 MeV fluorine ions; electrons at intensities of 50 to 2000V; hydrogen cations at 0.2 to 500 ev to 1 MeV; helium cations at 200 KeV to 1 MeV; fluorine or chlorine ions at 0.5 MeV; neon at 280 KeV; oxygen enriched flame treatment; or an accelerated argon ion treatment. In a more preferred embodiment of the invention, a silane based adhesion promoter, containing 3-aminopropyl silane dissolved in methoxy propanol, available as VM-652 from DuPont or AP8000 from The Dow Chemical Company, is first applied to the wafer surface; spun slowly to spread across the entire surface; allowed to stand for 2 seconds; and finally spun dry at 3000 rpm for 10 seconds. A solution of the oligomer is dispensed, 4 mL for a 200 mm wafer, by a high precision pump/filtration system, Millipore Gen-2, onto the wafer surface as the wafer is spun at 750 rpm. The wafer rotation is accelerated to 2000 rpm immediately following the dispense of the polymer solution and held at that spin speed for 20 seconds. A continuous stream of mesitylene is applied to the backside of the wafer for 5 seconds during the dispense of the oligomer solution. After spin coating, the film is dried on a hot plate at 70°C for 20 seconds. After the dry-bake step, the 2 mm to 5 mm edge bead of the coating is removed with a continuous stream of mesitylene while the wafer is spun at 2000 rpm; either by application from the backside or directly from the top near the edge. After the edge bead removal, the oligomer is further polymerized on a hot plate at 325°C for 90 seconds under a nitrogen blanket. The film is crosslinked either on a hot plate at 450°C for 2 minutes under nitrogen or in a nitrogen purged oven at 450°C for 6 minutes. The oligomer or polymer of the invention can be applied in combination with other additives to obtain specific results. Representative of such additives are metal-containing compounds such as magnetic particles, for example, barium ferrite, iron oxide, optionally in a mixture with cobalt, or other metal containing particles for use in magnetic media, optical media, or other recording media; conductive particles such as metal or carbon for use as conductive sealants, conductive adhesives, conductive coatings, electromagnetic interference (EMI)/radio frequency interference (RFI) shielding coating, static dissipation, and electrical contacts. When using these additives, the oligomer or polymer of the invention may act as a binder. The oligomer or polymer of the invention may also be employed as protection against the environment (that is, protective against at least one substance or force in an object's environment, including conditions of manufacture, storage and use) such as coatings to impart surface passivation to metals, semiconductors, capacitors, inductors, conductors, solar cells, glass and glass fibers, quartz and quartz fibers. The following examples are set forth to illustrate the present invention and should not be construed to limit its scope. In the examples, all parts and percentages are by weight unless otherwise indicated. Example 1 Preparation of Monomers Monomers were prepared as described below. The structures of these compounds are set out in Table I, hereinafter. A. 4-(4-(Phenylethynyl)phenyl)-2,3,5-triphenylcyclopentadienone (Compound A) (a) Preparation of 4-bromophenylacetyl chloride 4-Bromophenylacetic acid (100 g, 0.465 mol), thionyl chloride (300 mL) and DMF (about 2 mL) were charged to a 1-liter round bottom 3-necked flask equipped with a reflux condenser and a mechanical stirrer. The reaction mixture is heated under nitrogen to 50°C for 2 hours, using a charcoal scrubber for escaping gases. The thionyl chloride was evaporated and the product, 4-bromophenylacetyl chloride, was put into an addition funnel with benzene (30 mL). (b) Preparation of 4-bromodeoxybenzoin Benzene (200 mL) and aluminum chloride (74 g, 0.558 mol) were mixed into a flask and the mixture of 4-bromophenylacetyl chloride and benzene in Step (a) was added dropwise allowing the reaction to evolve HCl. The reaction mixture was stirred at room temperature for 1 to 1.5 hours and poured into ice water. Ethyl acetate (1 L) was added to dissolve the precipitated solids. The layers were separated and the organic layer was washed successively with 1 M aqueous HCl, saturated aqueous NaHCO 3 , brine and then dried over Na 2 SO 2 . The solvent was then evaporated to give a solid material which was recrystallized from ethylacetate/hexanes to give the title compound in 84 percent yield as a yellow solid. (c) Preparation of 4-Bromobenzil Perchloric acid (250 mL), water (250 mL), ethylene glycol dimethyl ether (glyme) (500 mL), thallium (III) nitrate trihydrate (222.0 g, 0.5 mol) and 4-bromodeoxybenzoin (68.75 g, 0.25 mol) were charged to a 2-liter round bottom 3-necked flask equipped with a reflux condenser and a mechanical stirrer. The reaction mixture was heated under nitrogen to reflux for 6 hours. After cooling to ambient temperature, methylene chloride (500 mL) was added. The resulting bilayer was decanted off the precipitated TI(I) salts formed. The layers were separated and the organic layer was washed with water, saturated aqueous NaHCO 3 and brine, followed by recrystallization of the resulting solid from 2-propanol gives the title compound. (d) Preparation of 4-(Phenylethynyl)benzil 4-Bromobenzil (10.0 g, 0.0346 mol), phenylacetylene (3.88 g, 0.0380 mol), and (PPh 3 ) 2 PdCl 2 (0.121 g, 0.0002 mol) in diethylamine (950 mL) was stirred at ambient temperature for 72 hours, followed by concentration to dryness. The residue was then taken up in methylene chloride. Standard aqueous workup followed by recrystallization from 2-propanol gives the title compound. (e) Preparation of Compound A 4-(Phenylethynyl)benzil (20 g, 0.0644mol), 1,3-diphenylacetone (14.2 g, 0.0677 mol) and ethanol (150 mL) were heated to 75°C. Potassium hydroxide (KOH) (1.8 g, 0.0322 mol), dissolved in ethanol (15 mL), was added dropwise over a 15 minute period. The reaction mixture was heated to reflux for 30 minutes, then cooled to 40°C and the precipitated product was filtered off, washed with cold ethanol and dried. Recrystallization from 2-propanol gives the title compound. B. 4-(4-Ethynylphenyl)-2,3,5-triphenylcyclopentadienone (Compound B) Compound B was prepared as in Example 1A using trimethylsilylacetylene in place of phenylacetylene followed by removal of the trimethylsilyl protecting group using a dilute base. C. 3,4-Bis-(4-(phenylethynyl)phenyl)-2,5- diphenylcyclopentadienone (Compound C) (a) Preparation of 4,4'-Dibromobenzoin A solution of 4-bromobenzaldehyde (25.0 g, 0.135 mol), 3-ethyl-5-(2-hydroxyethyl)-4-methylthiazolium bromide (1.70 g, 0.0068 mol) and triethylamine (4.10 g, 0.0405 mol) in ethanol (125 mL) was stirred at room temperature for 60 hours. The reaction mixture was concentrated to dryness, then taken up in CH 2 Cl 2 (150 mL), washed with 1 M HCI and saturated aqueous NaHCO 3 and dried (Na 2 SO 4 ), then concentrated, giving 25.2 g (100 percent) of a viscous yellow oil which solidifies upon standing at room temperature. 1 H NMR (CDCl 3 ) δ 7.73 (d, J=8.5 Hz, 2H), δ7.52 (d, J=8.5 Hz, 2H), 7.44 (d, J=8.2 Hz, 2H), 7.17 (d, J=8.2 Hz, 2H) 13 C NMR (CDCl 3 ) δ 197.33, 137.56, 132.33, 132.13, 131.90, 130.43, 129.46, 129.31, 122.93, 75.68. (b) Preparation of 4,4'-Dibromobenzil A solution of 4,4'-dibromobenzoin (20.2 g, 0.055 mol), ammonium nitrate (4.6 g, 0.0575 mol) and copper(II) acetate (0.100 g, 0.0005 mol) in 80 percent aqueous acetic acid (200 mL) was heated at reflux for three hours. The reaction mixture was cooled to room temperature and the product which crystallized out was filtered off, washed with ethanol and dried, giving 13.0 g (64 percent) of product as a light yellow solid, mp 226°C to 228°C. 1 H NMR (CDCl 3 ) δ 7.83 (d, J=8.5 Hz, 4H), 7.66 (d, J=8.5 Hz, 4H); 13 C NMR (CDCl 3 ) δ 192.25, 132.44, 131.45, 131.22, 130.7. (c) Preparation of 4,4'-Bis(phenylethynyl)benzil A solution of 4,4'-dibromobenzil (15.8 g, 0.0431 mol), phenylacetylene (5.06 g, 0.0495 mol), (PPh 3 ) 2 PdCl 2 (0.151 g, 0.0002 mol) and Cul (0.820 g, 0.0043 mol) in diethylamine (150 mL) was heated at reflux overnight. The reaction mixture was concentrated to dryness, then taken up in CH 2 Cl 2 (150 mL), washed with 1 M HCI, 10 percent Na 2 CO 3 H 2 O, brine and dried (Na 2 SO 4 ), then concentrated. Crystallization from 2-propanol gives 7.92 g (45 percent) as a light tan solid, mp 168°C to 170°C. 1 H NMR (CDCl 3 ) δ 7.97 (d, J=8.2 Hz, 4H), 7.64 (d, J=8.2 Hz, 4H), 7.55 (m, 4H), 7.37 (m, 6H); 13 C NMR (CDCl 3 ) δ193.03, 132.46, 132.03, 131.82, 130.21, 129.84, 129.06, 128.47, 122.37, 94.28, 88.55. (d) Preparation of Compound C A solution of KOH (0.34 g, 0.0061 mol) in ethanol (5 mL) was added dropwise to a solution of 4,4'-bis(phenylethynyl)benzil (5.0 g, 0.0122 mol) and 1,3-diphenylacetone (2.69 g, 0.0128 mol) in ethanol (75 mL) at 75°C. The resulting solution was heated at reflux for one hour, cooled to room temperature and the precipitate filtered off and dried. Digestion of the product from boiling ethanol gives 5.26 g product (74 percent) as a brick red solid: m.p. 222°C (DSC); 1 H NMR (CDCl 3 ) δ 7.5 (bd, J=3.6 Hz, 4H), 7.34 (m, 5H), 7.25 (bs, 5H), 6.93 (d, J=8.0 Hz, 4H); 13 C NMR (CDCl 3 ) δ 199.02, 152.72, 132.31, 131.14, 130.83, 129.93, 129.67, 128.99, 128.04, 127.93, 127.71, 127.28, 125.31, 123.12, 122.46, 90.60, 88.71; MS (El) 585 (28), 584 (M+, 56), 556 (19), 378 (36), 278 (100). D. 3,4-Bis-(3-(phenylethynyl)phenyl)-2,5- diphenylcyclopentadienone (Compound D) (a) Preparation of 3,3'-Dibromobenzoin Prepared as in Example 1E(a), but from 3-bromobenzaldehyde (25.0 g, 0.135 mol), 3-ethyl-5-(2-hydroxyethyl)-4-methylthiazolium bromide (1.70 g, 0.0068 mol), and triethylamine (4.10 g, 0.0405 mol) in ethanol (125 mL), giving 24.8 g (99 percent) of a viscous yellow oil. 1 H NMR (CDCl 3 ) δ 8.04 (s, 1H), 7.75 (d, J=7.8 Hz, 1H), 7.61 (d, J=8.0 Hz, 1H), 7.47 (s, 1H), 7.26-7.15 (m, 4H), 5.87 (s, 1H); 13 C NMR (CDCl 3 ) δ 196.96, 140.48, 136.86, 134.94, 131.93, 131.86, 130.69, 130.63, 130.26, 127.57, 126.33, 123.19, 75.76. (b) Preparation of 3,3'-Dibromobenzil Prepared as in Example 1E(b), but from 3,3'-dibromobenzoin (24.8 g, 0.067 mol), ammonium nitrate (5.63 g, 0.070 mol) and copper(II) acetate (0.12 g, 0.0007 mol) in 80 percent aqueous acetic acid (200 mL), giving 17.0 g (69 percent) product as a light yellow solid. 1 H NMR (CDCl 3 ) 8 8.12 (s, 2H), 7.88 (d, J=7.8 Hz, 2H), 7.79 (d, J=7.9 Hz, 2H), 7.40 (dd, J=8.0, 8.0 Hz, 2H); 13 C NMR (CDCl 3 ) δ 191.58, 137.87, 134.27, 132.53, 130.60, 128.59, 123.39. (c) Preparation of 3,3'-Bis(phenylethynyl)benzil A solution of 3,3'-dibromobenzil (5.0 g, 0.0136 mol) and phenylacetylene (3.47 g, 0.0340 mol) in triethylamine (30 mL) was deaerated by bubbling nitrogen through the solution for ten minutes. (PPh 3 ) 2 PdCl 2 (0.067 g, 0.0001 mol) was then added, and the reaction mixture heated at reflux overnight. The mixture was concentrated to dryness, then taken up in CH 2 Cl 2 (100 mL), washed sequentially with 1 M HCI, saturated aqueous NaHCO 3 and dried (Na 2 SO 4 ), then concentrated, giving 3.67 g (66 percent) product as a white solid: m.p. 144°C to 145°C; 1 H NMR (CDCl 3 ) δ 8.12 (s, 2H), 7.96 (d, J=7.9 Hz, 2H), 7.81 (d, J=7.7 Hz, 2H), 7.52 (m, 6H), 7.36 (m, 6H); 13 C NMR (CDCl 3 ) δ 192.83, 137.40, 132.82, 131.52, 129.04, 128.58, 128.25, 124.50, 122.37, 91.11, 87.62. (d) Preparation of Compound D A solution of KOH (0.25 g, 0.0045 mol) in ethanol (5 mL) was added dropwise to a solution of 3,3'-bis(phenylethynyl)benzil (3.67 g, 0.0089 mol) and 1,3-diphenylacetone (2.07 g, 0.0098 mol) in ethanol (100 mL) at 75°C. The resulting solution was heated at reflux for one hour, then cooled to room temperature. The resulting precipitate was filtered off and dried. Digestion of the product from boiling ethanol gives 2.0 g (38 percent) product as a dark red solid: m.p. 208°C (DSC). 1 H NMR (CDCl 3 ) δ 7.45 (bm, 6H),7.31-7.21 (bm, 20H), 6.9 (d, J=7.9 Hz, 2H); 13 C NMR (CDCl 3 ) δ 199.38, 152.83, 132.87, 131.48, 131.25, 131.12, 129.80, 129.60, 128.53, 127.99, 127.92, 127.84, 127.70, 127.29, 125.03, 122.96, 122.47, 90.60, 88.71. Since the compound preparation procedures described above employ standard chemistry practices and it is known that slightly different reactants can require slightly different reaction parameters from those for other reactants, it is to be understood that minor modifications to the reaction parameters set forth such as the use of an excess of one reactant, the use of a catalyst, the use of temperatures slightly higher or lower than room temperature, for example, and/or high speed mixing and other such conventional changes are within the scope of the present invention.

Claims: Oligomers, uncured polymers and cured polymers comprising the reaction product of at least one aromatic monomer containing at least one cyclopentadienone moiety and at least one acetylene moiety. A polyfunctional compound selected from the general formula: or wherein R 1 and R 2 are independently H or an unsubstituted or inertly-substituted aromatic moiety and Ar 4 is an unsubstituted or inertly-substituted aromatic moiety. Oligomers, uncured polymers and cured polymers of claim 1 comprising the reaction product of the polyfunctional compound of Claim 2. The oligomers uncured polymers or cured polymers of Claim 1 formed by the reaction of 4-(4-(phenylethynyl)phenyl)-2,3,5-triphenylcyclo-pentadienone, 4-(4-ethynylphenyl)-2,3,5-triphenyl-cyclopentadieone, 3,4-bis(4-(phenylethynyl)phenyl)-2,5-diphenylcyclopentadienone or 3,4-bis(3-(phenylethynyl)phenyl)-2,5-diphenylcyclopentadienone. A process comprising applying the oligomer or uncured polymer of Claim 3, to a surface and heating to react additional cyclopentadienone or acetylene moieties to form an uncured polymer or a cured polymer. An integrated circuit article comprising an active substrate containing transistors and an electrical interconnect structure containing patterned metal lines separated, at least partially, by layers or regions of the dielectric material comprising the oligomer, uncured polymer or cured polymer of Claim 1. 4-(4-(Phenylethynyl)phenyl)-2,3,5-triphenylcyclopentadienone. 4-(4-Ethynylphenyl)-2,3,5-triphenylcyclopentadienone. 3,4-Bis(4-(phenylethynyl)phenyl)-2,5-diphenylcyclopentadienone or 3,4-Bis-(3-(phenylethynyl)phenyl)-2,5-diphenylcyclopentadienone.

Inventors: BUSKE GARY R, DEVRIES ROBERT A, GODSCHALX JAMES P, LYSENKO ZENON, MARTIN STEVEN J, MILLS MICHAEL E, ROMER DUANE R, SMITH DENNIS W JR, SO YING HUNG, TOWSEND PAUL H III, BUSKE, GARY R., DEVRIES, ROBERT A., GODSCHALX, JAMES P., LYSENKO, ZENON, MARTIN, STEVEN J., MILLS, MICHAEL E., ROMER, DUANE R., SMITH, DENNIS W., JR., SO, YING HUNG, TOWSEND, PAUL H., III
Applicants: DOW GLOBAL TECHNOLOGIES INC, DOW GLOBAL TECHNOLOGIES INC.
Application year: 1997
Main classification: C07C49
IPC codes: C08G61