Argon purification process and unit

Abstract: Purpose An argon recovery and purification process in which the consumption of energy is small because of simple steps, is provided. Means for Solution This process comprises: a first step of reacting impure argon gas with hydrogen gas (H2) so that oxygen (O2) contained in the impure argon gas is converted to water (H2O), thereby substantially removing oxygen (O2) from the impure argon gas; a second step of introducing said impure argon gas into an adsorption means, where said adsoprption means is caused to adsorb water (H2O) and carbon dioxide (CO2) contained in said impure argon gas, thereby substantially removing the water (H2O) and carbon dioxide (CO2) from said impure argon gas; and a third step of subjecting said impure argon gas to a low temperature liquefaction and introducing the liquefied argon into a rectification means, where said rectification means is caused to remove low boiling point impurity components and high boiling point impurity components contained in said impure argon gas by purification and separation, thereby obtaining pure argon gas substantially consisting of argon.

Description: The present invention relates to a process and apparatus for recovering and purifying argon in a semiconductor manufacturing process, and particularly to a process for recovering and purifying argon from a pull-up furnace in a monocrystal silicon ingot manufacturing line. Into a silicon furnace for manufacturing silicon ingots, a large amount of argon gas is supplied as an inert gas. This argon gas is discharged from the silicon furnace as it contains a gas mainly consisting of N 2 and O 2 generated in the manufacture of silicon ingots and further contains hydrocarbons such as CH 4 . Argon gas is obtained by concentrating and purifying argon which exists in an amount of 0.93% in air through very low temperature separation, and it is therefore expensive. Accordingly, it is preferred to purify impure argon gas discharged in a large amount from a silicon furnace so that argon gas is obtained. Studies on a process for purifying argon gas mixed with substances other than argon to obtain pure argon gas have been hitherto made. For example, in J-A-63-189,774, J-A-01-230,975, J-A-02-272,288 and J-A-05-256,570, there are disclosed processes which comprise removing CO, CO 2 , H 2 O gases from impure argon gas by desorption, and then purifying the impure argon gas through very low temperature separation or a catalytic reaction to obtain purified argon gas. Furthermore, in J-A-02-282,682 and J-A-03-039,886 and further J-B-05-012,393 and J-B-05-029,834, there are disclosed argon recovery processes which include a step of converting CO, H 2 and hydrocarbons to H 2 O and CO 2 by use of a catalyst. US-A-4 623 524 describes a process for obtaining argon from a silicon furnace including an oxidation step, a combustion step, a deoxo-step, an absorption step and a distillation step. In the impure argon gas purification and recovery processes described in each of the aforementioned documents, an oxidation treatment based on a catalytic reaction is carried out on hydrocarbons contained in impure argon gas, thereby converting these hydrocarbons to substances such as H 2 O and CO 2 . At that time, an excess of oxygen gas (O 2 ) is required for this reaction, and this oxygen is subsequently supplied to the impure argon gas. However, this causes an excess of oxygen to exist in the impure argon gas. In order to separate this oxygen from the impure argon gas, there is usually adopted a process which comprises reacting O 2 with H 2 so that said oxygen is converted to H 2 O, and then removing this H 2 O, where a larger amount of hydrogen is required. In addition, this catalytic reaction requires an external source of heat, and it will be therefore concluded that this process is not satisfactory from the viewpoint of energy efficiency. Due to consideration of the aforementioned situation, the present invention has been achieved. It is an object of the present invention to provide an argon recovery and purification process in which the consumption of energy is small because of simple steps. According to the present invention, there is provided an argon recovery and purification process, according to claim 1. According to the present invention, there is provided an argon recovery and purification unit, as claimed in claim 6. Gases such as oxygen, nitrogen and carbon monoxide and hydrocarbons such as methane are usually contained as impurities in impure argon gas discharged from a silicon furnace. The present invention is characterized by including a rectification step of separating the impurities on the very low temperature side. In particular, hydrocarbons will be highly separated at this rectification step. Accordingly, there is no need of heating the discharged gas at high temperatures as in the catalytic reaction of hydrocarbons and it is therefore possible to reduce electricity for heating up or the likes. Furthermore, since there is no need to add oxygen necessary for this catalytic reaction once more into the discharged gas, the whole of the system can be simplified. In the prior art of injecting oxygen, it is necessary to add a slightly excess of oxygen in order to carry out the catalytic reaction completely, and it is necessary to further add a large amount of hydrogen gas subsequently in order to remove this excess of oxygen. According to the present invention, however, there is required only the amount of hydrogen gas for removing oxygen which is initially contained in the impure argon gas, with no need of such operations. In order to separate argon and oxygen in the impure argon gas by rectification, many rectifying trays are required because their boiling points are about of the same degree (argon: -185.8°C and O 2 : -182.9°C at 1 atm, respectively). By the way, the amount of oxygen contained in the impure argon gas is small. Accordingly, this oxygen is removed as water by adding hydrogen gas in an amount slightly larger than one required in a complete reaction for reacting oxygen with hydrogen gas (H 2 ) so that it is converted to water, and reacting the hydrogen gas with oxygen at low temperature by use of a catalyst. H 2 O and CO 2 among the remaining impurity components, which will be solidified at low temperature, are removed by adsorption, and the other impurity components are removed by the rectification means. The rectification means comprises a first rectification column and a second rectification column and low boiling point impurity components (N 2 , CO, H 2 , etc.) whose boiling points are lower than that of argon are substantially removed in the first rectification column, and high boiling point impurity components (CH 4 , C 2 H 6 , etc.) whose boiling points are higher than that of argon are concentrated here and introduced into the second rectification column, and these high boiling point impurity components are substantially removed to obtain pure argon in the second rectification column. Now referring to the accompanying drawing, an embodiment of the present invention will be completely described in detail to further explain the present invention. Fig. 1 is a flow chart showing the argon gas recovery and purification system according to the present invention. This argon gas recovery and purification system has a line where discharged impure argon gas recovered from a silicon ingot pull-up furnace 1 by way of a vacuum pump 2 is purified, for the same pull-up furnace 1. The argon recovery and purification line according to the present invention will be described in detail. In a pressure-reduced silicon ingot pull-up furnace, a large amount of argon gas is used as its atmosphere gas. A vacuum pump is used in order to recover the argon gas which has been used, and as a result, hydrocarbons (CnHm) such as methane other than several percent of air (oxygen and nitrogen, etc.) get mixed as impurities in an amount of about 50 ppm, calculated as methane, in the argon gas. (This argon gas containing the mixed impurities will be hereinafter called "impure argon gas"). A unit characterized by purifying and separating impure argon gas by low temperature liquefaction to remove hydrocarbons (CnHm) from the argon gas, without adding O 2 into hydrocarbons (CnHm) such as methane contained in this impure argon gas and elevating the temperature thereof at 400° C or more so that they are burned for removal to CO 2 and H 2 O, is schematically shown in the flow sheet of Fig. 1. In accordance with this flow sheet, this unit will be explained. Argon gas which has been used as an atmosphere gas in a silicon ingot pull-up furnace 1 is sucked by a vacuum pump 2 of the dry seal type, for example, of the mechanical seal type, and recovered as "impure argon gas" from the pull-up furnace 1 into a gas holder 3. The impure argon gas accommodated in the gas holder 3 is sucked in an amount according to an average amount of argon gas used in the pull-up furnace 1 by means of an impure argon gas compressor 5 so as to be introduced into a suction filter unit 4. Dust contained in the impure argon gas is removed in the suction filter unit 4. This suction filter unit 4 possesses at least a capacity of removing dust from the impure argon gas to such an extent that no hindrance exists for carrying out a continuous operation in a subsequent step. The impure argon gas filtered by the suction filter unit 4 is then introduced into an impure argon compressor 5, where it is pressurized to a pressure of 3,43-8,82 bar (3.5 - 9.0 kg/cm 2 ). This pressure range covers a pressure at which a decarbonating drier mentioned below can be operated under optimum conditions. In the impure argon gas compressor 5, in addition, the temperature of the impure argon gas to be fed to a deoxo installation is also elevated by virtue of heat of compression. Then, the pressurized impure argon gas is sent to a deoxo installation 6. The deoxo installation 6 is equipped with a heater 6a and a deoxo column 6b. To the deoxo installation 6 is connected a flow-in line P6 of hydrogen gas H 2 for deoxidation use coming from a hydrogen gas source. The deoxo column 6b is filled with a catalyst for the deoxidation reaction such as Pd catalyst, where the reaction of oxygen (O 2 ) contained in the impure argon gas introduced in the deoxo column 6b with hydrogen gas H 2 for deoxidation use will be accelerated by means of the Pd catalyst. Further, the Pd catalyst serves to react carbon monoxide (CO) in the impure argon gas with O 2 so that it is converted to CO 2 . Namely, the oxygen (O 2 ) and carbon monoxide (CO) contained in the impure argon gas introduced in the deoxo column 6 are converted to other substances. (The impure argon gas which has been deoxidized by the deoxo installation 6 will be hereinafter called "deoxo argon gas".) Thus, O 2 is substantially removed from the impure argon gas. In a case where the temperature of the discharged gas elevated in temperature by the impure argon compressor 5 does not reach a temperature suitable for the aforementioned deoxidation reaction, the heater 6a will heat the impure argon gas to a predetermined temperature. This temperature is, for instance, nearly about 150 °C. In addition, the flow rate of hydrogen to be fed to the deoxo column 6b is regulated so that the amount of excessive hydrogen left after the reaction of oxygen and hydrogen in the deoxo column 6b may be about 0.7% - 1.5%. The deoxo argon gas is then fed to a cooling installation 7. The cooling installation 7 comprises a water cooler 7a corresponding to an after cooler of the impure argon compressor 5, separators 7b, 7d for removing water condensed in the deoxo argon gas and a refrigerator 7c for condensing water. The deoxo argon gas is introduced into the water cooler 7a and cooled down to about 40 °C here. Then, the cooled deoxo argon gas is introduced into the water separator 7b placed at the outlet side of the water cooler 7a, where the condensed water is first separated. Then, the deoxo argon gas is cooled down to about 10 °C by the refrigerator 7c. Also at the outlet side of the refrigerator 7c is disposed the water separator 7d. Similarly in the water separator 7d, water condensed by the refrigerator 7c is separated and removed from the deoxo argon gas. A decarbonating and drying installation 8 comprises two adsorption columns 8a, 8b, each filled with a packing such as alumina or molecular sieve for adsorbing H 2 O and CO 2 . This decarbonating and drying installation 8 may be one where adsorption is carried out by utilizing the principle of pressure swing adsorption (PSA) or one where adsorption is carried out by utilizing the principle of temperature swing adsorption (TSA). In the decarbonating and drying installation 8, solidifiable components such as H 2 O and CO 2 in the deoxo argon gas are adsorbed and separated to such a level necessary for the very low temperature separation in a demethanizing column mentioned below, and thus, they are removed from the deoxo argon gas. To the decarbonating and drying installation 8 is connected a line for supplying nitrogen gas for desorption of the adsorbed H 2 O and CO 2 because an adsorption utilizing PSA or TSA is carried out. This nitrogen gas will be supplied from a line P8 connected to a recycle nitrogen line mentioned below, and nitrogen gas containing the desorbed H 2 O and CO 2 will be taken out of the decarbonating and drying installation 8 by way of a line P8a and discharged as a waste gas to the atmospheric air. A heat exchanger 9, reboiler 10, argon rectification column 11, argon condenser 12, demethanizing column 13, pure argon condenser 14 and hydrogen separator 15 are accommodated in a cold box shown by an alternate long and two short dashes line 20 in Fig. 1, where the liquefied impure argon gas is treated as it is thermally interrupted from the outside. The deoxo argon gas which has been freed of H 2 O and CO 2 by adsorptive separation in the decarbonating and drying installation 8 is introduced into a countercurrent heat exchanger 9. In this countercurrent heat exchanger 9, the deoxo argon gas from the decarbonating and drying installation 8 is introduced in the same direction as the introducing direction of recycle nitrogen gas from a nitrogen compressor 16 mentioned below, and brought into counter-current heat exchange with low pressure recycle nitrogen gas generated in an argon condenser 12 and pure argon condenser 14 mentioned below, waste gas generated in an argon rectification column 11 mentioned below, pure argon gas generated in a demethanizing column 13 and recovered hydrogen gas from a hydrogen separator 15 placed for recovery of hydrogen, so as to be respectively cooled down nearly to their dew points. Then, the deoxo argon gas cooled by the heat exchanger 9 is fed to a reboiler 10. In this reboiler 10, the deoxo argon gas is brought into heat exchange with liquefied pure argon gas so as to generate a reboiled gas, where the deoxo argon gas itself is liquefied. The liquefied deoxo argon gas contains uncondensed gases still mixed therein such as a small amount of hydrogen. The liquefied deoxo argon gas at that time contains, for example, 1% of H 2 , 0.1% of N 2 and 0.005% of CH 4 as impurities, and comprises all the balance of argon. Then, this liquefied deoxo argon gas is led to the hydrogen separator 15. After the recovered hydrogen gas from the top portion of the hydrogen separator 15 is heated to normal temperature by the argon heat exchanger 9, it is released to the atmospheric air or returned to upstream of the heater 6a of the aforementioned deoxo installation 6 so as to be utilized to reduce the amount of hydrogen used in the whole of the system. From the bottom portion of the hydrogen separator 15, the liquefied deoxo argon gas is led to the upper portion of the argon rectification column 11 after it is reduced in pressure. In the argon rectification column 11, a reflux liquid generated in an argon condenser 12 placed on the top portion thereof and the reboiled gas generated in the reboiler 10 placed at the bottom portion thereof are repeatedly rectified at respective trays, where the low boiling point impurity components such as H 2 , N 2 and CO are concentrated and argon is recovered in the upper portion 11 a of the rectification column 11, and the low boiling point impurity components such as H 2 , N 2 and CO are separated and removed from the descending reflux liquid in the middle portion 11b thereof. Thus, the argon gas is rectified to a purity level that is sufficient as a product. In the lower portion 11c of the rectification column, high boiling point impurity components such as methane are concentrated in order to increase an argon recovery rate. By concentrating the high boiling point components in the deoxo argon gas about several hundred times and then separating then by liquid extraction from the bottom portion of the argon rectification column 11 by way of a line P11, and by concentrating the low boiling point components such as H 2 , N 2 and CO to about several ten times in the upper portion of the argon rectification column 11 and then separating them in a gaseous state, it is enabled to obtain an argon recovery rate of 90 - 95%. The extracted gas from the lower portion (middle between the portions 11b and 11c of the argon rectification column 11 is led to a demethanizing column 13 as it has been sufficiently freed of the low boiling point components such as H 2 , N 2 and CO, in which after this extracted gas is rectified by a reflux liquid generated in a pure argon condenser 14 placed in the top portion of the demethanizing column 13 and high boiling point components such as methane are sufficiently removed by washing therefrom, it is extracted as pure argon gas from the top portion thereof. This extracted pure argon gas is warmed to normal temperature by the argon heat exchanger 9 mentioned above and then led to an argon compressor 17 mentioned below. After a reflux liquid generated in the pure argon condenser 14 placed in the top portion of the demethanizing column 13 recovers the high boiling point components at each rectifying tray, it is returned as a reflux liquid to the lower portion 11c of the argon rectification column 11. In order to obtain a reflux ratio necessary for this process, there is provided a recycle nitrogen line, in which after recycle nitrogen is elevated in pressure by means of a recycle nitrogen compressor 16 to a pressure sufficient to condense in the reboiler 10, and cooled down in the argon heat exchanger 9, it is liquefied, with generating reboiled gas, in the reboiler 10. The liquefied recycle nitrogen gas is distributed by valves V12, V14 so that it is expanded to a pressure sufficient to evaporate through heat exchange in the argon condenser 12 and pure argon condenser 14 and a necessary reflux liquid is generated. After low-pressure recycle nitrogen gas evaporated in the argon condenser 12 and pure argon condenser 14 is warmed to normal temperature in the argon heat exchanger 9, it is elevated in pressure in the recycle nitrogen compressor 16 again. Cold necessary in this cold cycle is supplied as liquid nitrogen to the pure argon condenser 14 or argon condenser 12 so that its latent heat is effectively utilized in each of the condensers 14, 12 and its sensible heat is effectively utilized in the argon heat exchanger 9. Then, a part of the nitrogen gas is extracted from the low-pressure recycle nitrogen line and used as regeneration gas for the aforementioned decarbonating and drying installation 8, and the remaining part thereof is utilized under circulation in the low-pressure recycle nitrogen line. Nitrogen gas which is short in the low-pressure recycle nitrogen line will be replenished as liquid nitrogen through a pipe P14 from the outside. This liquid nitrogen will be used as regeneration gas for the decarbonating and drying installation 8 after its temperature is optionally made to be normal temperature through heat exchange with the atmospheric air in a heat exchanger 19. After the pure argon gas which has passed through the aforementioned steps is elevated in pressure to a predetermined pressure by a product argon compressor 17, and freed of dust particles contained therein to a level necessary for the silicon ingot pull-up furnace 1 by means of a produce filter installation 18, it will be returned together with replenishment argon to the silicon ingot pull-up furnace 1 again. Although an example using a vacuum pump 2 of the dry type, for example, of the mechanical seal, has been described, with referring to Fig. 1, the process according to the present invention can be optionally modified to various variants, for instance, such a variant that in a case where a vacuum pump of the oil seal type is used as the vacuum pump 2, impure argon gas is treated by adding, after this vacuum pump 2 and before the deoxo installation 6, an installation for removing heavy pentane (C5+) or more heavy components which may clog the packings in the decarbonating and drying installation 8, of hydrocarbons (CnHm), and providing as the other means the same means as shown in Fig. 1. According to the argon recovery and purification process of the present invention, as has been described above in detail, pure argon gas can be obtained by previously converting oxygen (O 2 ) whose boiling point is very near to that of argon, of impurity components contained in impure argon gas, to water by a deoxo means, removing the same water by a decarbonating and drying means, and then highly separating the remaining impurity components by an argon rectification means. Thus, there are provided an argon recovery and purification process and unit in which the consumption of energy is small because of simple steps. Since the rectification means comprises a first rectification column and a second rectification column, low boiling point impurity components (N 2 , CO, H 2 , etc.) whose boiling points are lower than that of argon are substantially removed in the first rectification column and high boiling point impurity components (CH 4 , C 2 H 6 , etc.) whose boiling points are higher than that of argon are concentrated here and introduced into the second rectification column, and further the high boiling point impurity components are substantially removed to obtain pure argon gas in the second rectification column. Accordingly, it is possible to obtain highly pure argon gas by a compact unit. By using the argon recovery and purification process and unit according to the present invention on impure argon coming from a silicon monocrystal furnace or the like, there are obtained the aforementioned remarkable effects. Fig. 1 is a flow sheet showing a concrete example of the argon recovery and purification process according to the present invention.

Claims: An argon recovery and purification process, which comprises purifying impure argon gas discharged from a silicon furnace (1) and containing low boiling point impurity components whose boiling points are lower than that of argon such as oxygen and nitrogen and high boiling point impurity components whose boiling points are higher than that of argon such as hydrocarbons to obtain pure argon gas substantially consisting of argon, and supplying said pure argon gas to the silicon furnace again, including: a first step of adding hydrogen into said impure argon gas, where said hydrogen is reacted with oxygen contained in the impure argon gas so as to be converted to water, thereby substantially removing the oxygen from said impure argon gas; a second step of introducing said impure argon gas into an adsorption means (8), where said adsorption means is caused to adsorb water and carbon dioxide contained in said impure argon gas, thereby substantially removing the water and carbon dioxide from said impure argon gas; and a third step of subjecting said impure argon gas to a low temperature liquefaction and introducing the liquefied argon gas into a rectification means (11, 13), where said rectification means comprises a first rectification column (11) for substantially removing said low boiling point impurity components from said impure argon gas and characterized in that said rectification means also comprises a second rectification column (13) for substantially removing said high boiling point impurity components from said impure argon gas introduced from the first rectification column. Process according to claim 1 wherein no oxidation step takes place prior to said first step. Process according to claim 1 or 2 wherein fluid is taken from a point between the feed injection point of said first column (11) and the bottom of said first column (11) and is sent to the bottom of said second column (13). Process according to claim 1, 2 or 3 wherein said first column has a bottom reboiler (10). Process according to any preceding claim wherein said first and second columns (11, 13) each have a top condenser (12, 14). An argon recovery and purification unit, in which impure argon gas discharged from a silicon furnace (1) and containing low boiling point impurity components whose boiling points are lower than that of argon such as oxygen and nitrogen and high boiling point impurity components whose boiling points are higher than that of argon such as hydrocarbons is purified to obtain pure argon gas substantially consisting of argon, and said pure argon gas is supplied to the silicon furnace again, characterized by having : a deoxo means (6) having a deoxidation catalyst for accelerating a reaction of reacting oxygen (O 2 ) with hydrogen gas (H 2 ) so that the hydrogen gas is converted to water, where hydrogen gas (H 2 ) is added into said impure argon gas introduced here so that said hydrogen gas is reacted with oxygen (O 2 ) so as to be converted to water, thereby substantially removing the oxygen (O 2 ) from said impure argon gas; a cooling means (7) for cooling down said impure argon gas which has been substantially freed of oxygen by said deoxo means; a decarbonating and drying means (8) for substantially removing water (H 2 O) and carbon dioxide (CO 2 ) contained in said impure argon gas which has been cooled down by said cooling means through adsorption; and a rectification means (11, 13) for rectifying said impure argon gas which has been substantially freed of water and carbon dioxide by said decarbonating and drying means to substantially remove said low boiling point impurity components and said high boiling point impurity components comprising a first rectification column (11) for substantially removing said low boiling point impurity components from said impure argon gas, thereby obtaining pure argon gas, characterized in that said rectification means also comprises a second rectification column (13) for substantially removing said high boiling point impurity components from the liquefied impure argon gas introduced here from said first rectification column. Unit according to claim 6 wherein said first and second columns (11, 13) each have a top condenser (12, 14) cooled by a nitrogen cycle. Unit according to claim 6 or 7 including means for sending impure argon gas from said decarbonating and drying means (8) to said reboiler (10) where it condenses, and means for sending the resulting liquid to said 5 first column (11).

Inventors: NAGAMURA TAKASHI, TOMITA SHINJI, YAMAMOTO TAKAO, NAGAMURA, TAKASHI, TOMITA, SHINJI, YAMAMOTO, TAKAO, Nagamura, Takashi, c/o Harima Fact. of Teisan K.K., Tomita, Shinji, c/o Harima Factory of Teisan K.K., Yamamoto, Takao, c/o Harima Fact. of Teisan K.K.
Applicants: AIR LIQUIDE JAPAN LTD, AIR LIQUIDE JAPAN, LTD.
Application year: 1996
Main classification: C01B23
IPC codes: F25J3, C30B15, C01B23