Display device and production method thereof

Abstract: Disclosed herein is a method of producing a display device comprising a substrate and a plurality of conductive members provided on the substrate, said conductive members each having a substantially even surface and making up pixels, wherein the conductive members are smoothed by means of chemical mechanical polishing.

Description: The present invention relates to a method of producing an active matrix substrate, and a method of producing a liquid crystal display device, incorporating such active matrix substrate. Figs. 6A to 6E illustrate the steps of a production process of an active matrix substrate used in an active matrix type liquid crystal display device, as an example of a conventional process. First of all, an n-type silicon semiconductor substrate 1 is partially thermally oxidized to form LOCOS (local oxidation of silicon) oxide films 2. The LOCOS oxide films 2 are used as a mask to ion-implant impurities, thereby forming PWLs (p-wells) 3. This substrate 1 is thermally oxidized again to form gate oxide films 4 (Fig. 6A). After gate electrodes 5 composed of an n-type polysilicon doped with impurities are then formed, impurities are ion-implanted in the whole surface of the substrate 1 to form NLDs (n-type light doped drains) 6. Impurities are subsequently ion-implanted using a patterned photoresist as a mask to form source and drain regions 7 and 7' (Fig. 6B). A PSG (phospho-silicate glass; phosphate glass) layer 8, which is an interlayer film, is formed on the whole surface of the substrate 1. After contact holes are patterned at portions of the PSG layer 8, which are situated right over the source and drain regions 7 and 7', and an Al film is formed on the PSG layer 8 by sputtering, the Al film is patterned to form Al electrodes 9 (Fig.6C). A PSG layer 11, which is an interlayer film, is formed in a thickness of about 1000 nm (10,000 Å) on the whole surface of the substrate 1, and through-holes 80 are patterned (Fig. 6D). A film of a metallic material such as Al, Ti, Ta or W, or a compound thereof is formed in a thickness of about 500 nm (5,000 Å) on the surface of the PSG layer 11 on the substrate 1 by sputtering or the like, thereby forming pixel electrodes 13 by patterning (Fig. 6E). Besides the active matrix substrate using such a silicon substrate, an example of an active matrix substrate using an insulating substrate is illustrated in Fig. 7. Fig. 7 is a cross-sectional view of an active matrix substrate for a liquid crystal display device described in U.S. Patent No. 4,024,626. In the drawing, reference numerals 120, 131, 132, 133, 135 and 136 indicate an insulating substrate, a gate electrode, a potential-fixing electrode, a pixel capacitance electrode an interlayer film and a pixel electrode, respectively. In the display device illustrated in Figs. 6A to 6E, the surface of a pixel electrode 13 is influenced by difference in level of the underlying layer, and hence becomes uneven as illustrated in Fig. 6E. Besides, as apparent from Fig. 6E this substrate requires to cut a groove having the same depth as the film thickness of the pixel electrode 13 between the individual pixel electrodes so as to insulate them from each other. When light strikes on this pixel electrode 13, the incident light is scattered all around due to the irregularities of its surface, and so the reflection efficiency of light becomes very low. Besides, the surface irregularities form the cause of a failure in orientation in an orientation film-rubbing step of a packaging process of a liquid crystal. As a result, a failure to orientate the liquid crystal is caused, and the quality of images displayed is deteriorated due to the lowering of contrast. Besides, since the portions corresponding to the grooves between the individual pixel electrodes are not rubbed, the cause of a failure in the orientation of the liquid crystal is formed, and at the same time, a lateral electric field is generated between the pixel electrodes conjointly with the surface irregularities, which the electric field forms the cause of bright lines. The contrast of images displayed is markedly deteriorated by the occurrence of the bright lines, resulting in the reduction of image quality. Even in the active matrix substrate illustrated in Fig. 7, the pixel electrodes 136 are insulated from each other. Therefore, grooves are cut in the same manner as illustrated in Fig. 6E, and the substrates is hence concerned about the fact that the same disadvantages as described above are brought about. The above mentioned problems have been addressed in United Kingdom Patent Application GB-A-2279797 wherein there is disclosed a method of producing an active matrix substrate for use in a display device, which active matrix substrate comprises a substrate, a plurality of switching elements provided on the substrate, and a plurality of conductive members for defining a plurality of pixels, each of the conductive members being provided on the substrate and having a substantially even surface and being connected to a respective one of the switching elements, which method is performed by steps of: providing the substrate having the plurality of switching elements thereon; and producing the plurality of conductive members. As disclosed therein the step of producing the plurality of conductive members is performed by sequential steps of covering the switching elements with a layer of a first insulation material, depositing a layer of conductive material on the first layer of insulation material, patterning the layer of conductive material to define separated conductive members, filling the space between the separated conductive members by applying a covering layer of a second insulating material, and then removing surplus second insulating material and smoothing the surfaces of the conductive members by polishing. The present invention provides an alternative and in particular the step of producing the plurality of conductive members is performed by alternative steps of: forming first and second insulating layers, said first insulating layer having through holes, said second insulating layer having a respective hole over each through hole of said first insulating layer so as to expose, through said each through hole of said first insulating layer and said respective hole of said second insulating layer, a contact portion of a respective switching element; depositing a layer of conductive material to cover said first and second insulating layers and to contact each exposed contact portion through a respective through hole of said first insulating layer and a respective hole of said second insulating layer; and removing a surface portion of said layer of conductive material by chemical mechanical polishing, leaving conductive material within each through hole and respective hole to obtain conductive members, separated by areas of said second insulating layer, to define said pixels. In the preferred embodiments of this invention the step of forming the first and second insulating layers is performed by: covering the substrate having the switching elements with a first insulating layer of a first insulating material; covering the first insulating layer with a second insulating layer of a second insulating material having an abrasion rate different from that of the conductive material, which latter is to facilitate end point detection in the sequential step of chemical mechanical publishing; producing the holes by patterning said second insulating layer to leave only areas by which pixels are to be separated, using the first insulating layer as an etch stop; and forming the through-holes to expose the respective contact portions of the respective switching elements; and the thickness of the layer of conductive material deposited in the sequential step of depositing is not less than the depth of the second insulating layer. The first and second insulating materials may be, for example, silicon nitride and phospho-silicate glass, respectively. In the accompanying drawings: Figs. 1A through 1H illustrate the steps of a producing process for manufacturing an active matrix substrate according to a first embodiment of the present invention; Figs. 2A through 2D illustrate the steps of a production process for manufacturing an active matrix substrate according to a second embodiment of the present invention; Figure 3 illustrates a display device including an active matrix substrate; Figs. 4A through 4G illustrate the steps of a production process for manufacturing an active matrix substrate according to a third embodiment of the present invention; Figs. 5A through 5K illustrate the steps of a production process for manufacturing an active matrix substrate according to a fourth embodiment of the present invention; Figs. 6A through 6E illustrate the steps of a production process for manufacturing the active matrix substrate of a conventional display device ; and Fig. 7 illustrates an active matrix substrate used in another conventional display device. A feature of the present invention is that the surfaces of conductive members, which make up pixel electrodes, are polished by means of CMP. By this polishing, the surface of each of the pixel electrodes becomes smooth like a specular surface, and all the surfaces of the pixel electrodes can be made the same level. CMP is a method in which polishing is performed by making good use of a chemical etching action by a chemical component contained in an abrasive and a mechanical abrading action inherent in the abrasive. As an example of CMP, it is considered to form a reaction product by a chemical reaction of the chemical component contained in the abrasive with the surface of a sample to be polished and mechanically abrade and remove the reaction product with the abrasive and a polishing cloth. A process of CMP is as follows. After the sample to be polished is fitted up to a rotatable abrading head, the surface of the sample to be polished is pressed against a rotating platen (turn table), thereby conducting polishing. A pad (polishing cloth) is stuck on the surface of the platen, and polishing is allowed to progress by a slurry (abrasive) attached to the pad. Various kinds of apparatus are sold as apparatus for CMP. In the present invention, such apparatus may be suitably used. Examples of the apparatus for CMP include AVANTI 472 (trade name, manufactured by IPEC/PLANAR Co.), CMP-II (trade name, manufactured by Speed Fam Co.), EPO-113 and EPO-114 (trade names, manufactured by Ebara Corporation), MIRRA (trade name, manufactured by APPLIED MATERIALS Co.) and 6DS-Sp (trade name, manufactured by STRASBAUGH Co.). As the slurry, there may be used MSW-1000, XJFW-8048H, XJFW-8097B and XJFW-8099 (trade names, products of Rodel Co.); SEMI-SPERSE W-A355 and SEMI-SPERSE FE-10 (trade names, products of Cabot Co.); PLANERLITE-5101, PLANERLITE-RD-93034, PLANERLITE 5102, PLANERLITE-RD-93035, PLANERLITE-5103 and PLANERLITE-RD-93036 (trade names, product of FUJIMI INCORPORATED); KLEBOSOL-20H12, KLEBOSOL-30H25, KLEBOSOL-30H50, KLEBOSOL-30N12, KLEBOSOL-30N25 and KLEBOSOL-30N50 (trade names, products of STI Co.); and the like. As the polishing cloth, there may be used IC-1000, IC-1400, IC-60, IC-53, IC-50, IC-45, IC-40, Suba 400, Suba 400H, Suba 500, Suba 600, Suba 800, MHS15A, MHS24A, MHC14A, MHC14B, MHC15A, MHC26A, MHN15A, MHN24A, Supreme RN-H, Supreme RN-R, Whitex W-H, Whitex W-S, UR-100, XHGM-1158 and XHGM-1167 (trade names, products of Rodel Co.); Surfin XXX-5, Surfin 100, Surfin 260S, Surfin 000, Surfin 194, Surfin 191, Surfin 192, Surfin 2-X, Surfin 018-3, Surfin 018-0, Surfin 018, Surfin 200, Surfin 026, Surfin 024, Politex, Politex DG, Politex Suprem and Unicorfam (trade names, product of FUJIMI INCORPORATED); SBL135, SBD1014, 6ZP09, RP3010P5, GQ8785, GQ9810, GQ9806, GQ9813, GQ1070, GQ1110 and GQ1300 (trade names, products of Teijin Limited); 1000, 1000R, 1200, 1200R, 1300, 1400, 2000, 2010, 2020, 4100, 4300, 4400, 4500, 4600, 4800, 4900, 5100 and 5400 (trade names, products of NAPCON Co.); and the like. The present invention may be applied to the manufacture of display devices in which images are displayed by changing the angle of a mirror by applying voltage, in addition to liquid crystal display devices. The present invention will hereinafter be described more specifically by the following Examples. However, the present invention is not limited to or by these examples. Example 1: The manufacture of a reflection type active matrix liquid crystal display device will be described. Fig. 1H is a typical view illustrating this liquid crystal display device. Referring now to Fig. 1H, PSG (phospho-silicate glass) members 11 are provided as insulating members between conductive members 13 which make up pixel electrodes. The surfaces of the conductive members 13 and the insulating members 11 are polished by CMP. The production process of manufacturing this liquid crystal display device will hereinafter be described by reference to Figs. 1A to 1H. For convenience's sake of description, Figs. 1A to 1H typically illustrate the display device with a pixel part as the central figure. However, peripheral drive circuits such as a shift register for driving a switching transistor of the pixel part may also be formed on the same substrate at the same time as the forming step of the pixel part. First of all, an n-type silicon semiconductor substrate 1 having an impurity concentration of 10 15 cm -3 or lower is partially thermally oxidized to form LOCOS (local oxidation of silicon) oxide films 2. The LOCOS oxide films 2 are used as a mask to ion-implant boron in a dose of about 10 12 cm -2 , thereby forming PWLs 3 which are p-type impurity regions having an impurity concentration of about 10 16- cm -3 . This substrate 1 is thermally oxidized again to form gate oxide films 4 having an oxide film thickness of 100 nm (1000Å) or smaller (Fig. 1A). After gate electrodes 5 composed of an n-type polysilicon doped with phosphorus in a concentration of about 10 20 cm -3 are formed, phosphorus is ion-implanted in a dose of 10 12 cm -2 in the whole surface of the substrate 1 to form NLDs 6 which are n-type impurity regions having an impurity concentration of about 10 16- cm -3 . Phosphorus is subsequently ion-implanted in a dose of about 10 15 cm -2 using a patterned photoresist as a mask to form source and drain regions 7 and 7' having an impurity concentration of about 10 19 cm -3 (Fig. 1B). A PSG layer 8, which is an interlayer film, is formed on the whole surface of the substrate 1. This PSG layer 8 may be replaced by an NSG (nondoped silicate glass)/BPSG (boro-phospho-silicate glass) or TEOS (tetraethoxysilane) layer. After contact holes are patterned at portions of the PSG layer 8, which are situated right over the source and drain regions 7 and 7', and an Al film is formed on the PSG layer 8 by sputtering, the Al film is patterned to form Al electrodes 9 (Fig. 1C). In order to improve the ohmic contact characteristics of the Al electrode 9 with the source and drain regions 7 and 7', it is desirable that a barrier metal such as Ti/TiN be formed between the Al electrode 9 and the source and drain regions 7 and 7'. A plasma SiN film 10 is formed in a thickness of about 300 nm (3,000 Å) on the whole surface of the substrate 1, and a PSG layer 11 is then formed in a thickness of about 1000 nm (10,000 Å) thereon (Fig. 1D). The PSG layer 11 is patterned using the plasma SiN film 10 as a stopper layer for dry etching so as to leave only areas by which pixels are separated from each other. Thereafter, through-holes 12 are patterned by dry etching right over the Al electrodes 9 in respect contact with the drain regions 7' (Fig. 1E). A film for pixel electrodes 13 is formed in a thickness of 1000 nm (10,000Å) or greater on the substrate 1 by sputtering or EB (electron beam) deposition (Fig. 1F). As the film for the pixel electrodes 13, a film of a metal such as Al, Ti, Ta or W, or a film of a compound of such a metal is used. The surface of this film for the pixel electrodes 13 is polished by CMP (Fig. 1G). Supposing the thickness of the PSG layer 11 and the film thickness of the pixel electrode are 1000 nm (10,000Å) and xnm(Å), respectively, a depth of abrasion is not less than xnm(Å) but less than xnm(Å) + 1000 nm (10,000Å) More specifically, CMP is conducted by using EPO-114 (trade name) manufactured by Ebara Corporation as an apparatus for CMP, SUPREME RN-H (D51) (trade name) produced by Rodel Co. as a polishing cloth and PLANERLITE 5102 (trade name) produced by FUJIMI INCORPORATED as a slurry. An orientation film 15 is further formed on the surface of the active matrix substrate formed by the above processes. The surface of the film is then subjected to an orientation treatment such as a rubbing treatment. After the thus-treated matrix substrate and an opposite substrate are stuck together with a spacer (not illustrated), a liquid crystal 14 is filled in a space between the substrates to provide a liquid crystal display device (Fig. 1H). In this embodiment, the opposite substrate is constructed by arranging colour filters 21, black matrices 22, a common electrode 23 formed of ITO or the like and an orientation film 15' on a transparent substrate 20. A driving method of the reflection type liquid crystal display device produced according to this embodiment will now be described. A signal potential is applied to a source region 7 by a peripheral circuit such as a shift register formed on a chip basis on the substrate 1, and at the same time as this, a gate potential is applied to a gate electrode 5 to make a switching transistor of a pixel on-state, thereby supplying a drain region 7' a signal charge. The signal charge is stored in a depletion layer capacitance of p-n junction to give a pixel electrode 13 a potential through an Al electrode 9. At the time the potential of the pixel electrode 13 reaches the desired potential, the potential applied to the gate electrode 5 is cut off to make the switching transistor of the pixel off-state. Since the signal charge is stored in the p-n junction capacitance described above, the potential of the pixel electrode 13 is fixed until the switching transistor of the pixel is next driven. The liquid crystal 14 enclosed in the space between the substrate 1 and the opposite substrate 20 as illustrated in Fig. 1H is driven by the fixed potential of the pixel electrode 13. In the active matrix substrate according to this embodiment, as apparent from Fig. 1H, the surfaces of the pixel electrodes 13 are smooth, and the insulating layer is filled in a space between adjacent pixel electrodes to each other. Therefore, the surface of the orientation film 15 formed thereon also becomes smooth and even. Accordingly, reduction in utilization efficiency of light due to scattering of incident light, lowering of contrast due to a failure in rubbing and occurrence of bright lines by a lateral electric field generated by difference in level between the pixel electrodes, which have heretofore been caused by the irregularities, are prevented, whereby the quality of images displayed is improved. Example 2: A liquid crystal display device having an active matrix substrate different from that in Example 1 will be described. The production process for manufacturing this active matrix substrate is described with reference to Figs. 2A to 2D. First of all, LOCOS oxide films 2, PWLs 3 and gate oxide films 4 are formed on an n-type semiconductor substrate 1 in the same manner as in Example 1 (Fig. 2A). A patterned photoresist is used as a mask to implant phosphorus in a dose of about 10 15 cm -2 by ion implantation, thereby forming source and drain regions 7 and 7' having an impurity concentration of about 10 19 cm -3 and n-type impurity regions 31 which each form a pixel capacitance. Then, gate electrodes 5 composed of an n-type polysilicon and pixel capacitance electrodes 30, which each form the pixel capacitance, are formed (Fig. 2B). After a PSG layer 8 is formed on the substrate 1, contact holes are bored in the PSG layer 8 at portions, which are situated on the source and drain regions 7 and 7', and pixel capacitance electrodes 30, and Al film is formed on the PSG layer 8 by sputtering, the Al film is patterned to form Al electrodes 9. Each of the Al electrodes 9 connected to the drain 7' electrically connects the pixel capacitance electrode 30 to the drain 7' (Fig. 2C). Thereafter, the same processes as in Example 1 are followed to form an active matrix substrate (Fig. 2D). Each of the pixel electrodes 13 is electrically connected to the drain 7'. In this embodiment, each pixel capacitance is formed from the gate oxide film 4, the pixel capacitance electrode 30 and the n-type impurity region 31 having an impurity concentration of about 10 19 cm -3 . Since the gate oxide film 4 insulates the pixel capacitance electrode 30 from the n-type impurity region 31, a capacitor small in leakage current is formed. As described above, the leakage current in the pixel capacitance becomes extremely small, so that the variation in potential of the pixel electrode 13 is prevented, whereby a reflection type liquid crystal display device high in contrast and image quality is realized. Besides, since the pixel capacitance electrode 30 reduces difference in level in the pixel, the smoothing by CMP is made easy. Example 3 A cross-section of an active matrix substrate produced according to this embodiment is illustrated in Fig. 3. According to this embodiment, a protective film 40 is provided on the active matrix substrate according to Example 1. The selection of the protective film 40 to match the orientation film 15 permits optimizing the orientation of the orientation film 15, so that the orientation characteristics of a liquid crystal are improved, and display with high image quality is realized. Besides, since the protective film 40 protects the pixel electrodes 13, it can also prevent the pixel electrodes 13 from being scratched. It goes without saying that the protective film 40 according to this embodiment also can be applied to Example 2. Example 4 : In this embodiment, a production process for manufacturing an active matrix substrate used in a transmission type liquid crystal display device will be described with reference to Figs. 4A to 4g. Island-like semiconductor regions 51 having a height of about 200 nm (2,000Å) are formed with polysilicon or amorphous silicon on a transparent substrate 50 such as a quartz substrate (Fig. 4A). After a film of polysilicon or amorphous silicon is formed in a thickness of 100 nm (1,000Å) or smaller on the surface of the transparent substrate 50, and BF 2 is ion-implanted in a dose of about 10 12 cm -2 , the film is patterned to form TFTs (thin film transistors) 52 (Fig. 4B). Gate oxide films 4 are formed in a thickness of 30 nm (300 Å)or greater by thermal oxidation to form gate electrodes 5 composed of polysilicon. NLD regions 6, and source and drain regions 7 and 7' are formed by ion implantation (Fig. 4C). After a PSG layer 8, which is an interlayer film, is formed, contact holes are cut therein, and an Al film is formed on the PSG layer 8 and patterned to form Al electrodes 9 (Fig. 4D). A PSG layer 53, which is an interlayer film, and a light-shielding layer 54 for TFT are formed in that order (Fig. 4E). As the light-shielding layer 54, a film of Ti, Ta, W or the like, which undergoes no occurrence of spike in a subsequent heating process and has good light-shielding properties, is formed in a thickness of about 200 nm (2,000Å). The light-shielding layer 54 is electrically connected even after its patterning in Fig. 4F and fixed at a certain potential by being connected to a peripheral circuit, thereby forming a pixel capacitance with a pixel electrode 13. Thereafter, the same processes as in Example 1 are followed to form a plasma SiN film 10 and a PSG layer 11, pattern the PSG layer 11, bore through-holes according to the pattern, and form a film for pixel electrodes 13. A material for the pixel electrodes 13 is selected from transparent materials such as ITO, thereby constructing a transmission type liquid crystal display device. Alternatively, when a metallic material such as Al, Ti or Ta or a compound of such a metal is used, a reflection type liquid crystal display device is constructed. Surface polishing is subsequently performed by CMP in the same manner as in Example 1 to smooth the pixel electrodes 13 and at the same time, expose the PSG layer 11, whereby the individual pixel electrodes 13 are electrically insulated and separated from each other (Fig. 4G). To this embodiment, a smoothing process by CMP and the protective film 40 in Example 3 may be applied. Example 5 The production process of an active matrix substrate applied to a liquid crystal display device according to this embodiment is illustrated in Figs. 5A to 5K. LOCOS oxide films 2 are formed on both sides of an n-type semiconductor substrate 1, an Lp (low pressure)-SiN film 60 is formed in a thickness of 400 nm (4,000Å) or smaller on the portion of the LOCOS oxide film 2 corresponding to a pixel part, and a PWL 3 is formed (Fig. 5A). A peripheral circuit is formed in and on the semiconductor substrate by the same process as in Example 1, and switching transistors of the pixel part are formed on the Lp-SiN film 60 by the same process as the forming process of TFT in Example 5 (Fig. 5B). A PSG layer 8 is formed to form Al electrodes 9 (Fig. 5C). A PSG layer 53 and a light-shielding layer 54 are then formed (Fig. 5D). The light-shielding layer 54 is patterned so as to leave it only right over each TFT in the pixel part (Fig. 5E). A plasma SiN film 10 is formed in a thickness of about 300nm (3,000Å)(Fig.5F), and a PSG layer 11 is formed in a thickness of 1000nm (10,000Å) or greater in such a manner that the height of the PSG layer 11 on the peripheral circuit becomes higher than the light-shielding layer 54 (Fig. 5G). The PSG layer 11 is patterned, and the LOCOS oxide layer 2 on the back side of the substrate 1 is patterned to remove the LOCOS oxide film 2 right under the pixel part (Fig. 5H). A film for pixel electrodes 13 is formed in a thickness greater than the thickness of the PSG layer 11 (Fig. 5I). When a material for the pixel electrodes 13 is selected in the same manner as in Example 5, the liquid crystal display device according to this embodiment may be constructed either as a reflection type or as a transmission type. Surface polishing is performed by CMP in the same manner as in Example 1 to smooth the pixel electrodes 13 and at the same time, the individual pixel electrodes 13 are electrically insulated and separated from each other (Fig. 5J). Supposing the film thickness of the pixel electrode and the thickness of the PSG layer 11 are x nm(Å) and ynm(Å), respectively, a depth of abrasion by CMP is not less than xnm(Å) but less than x + ynm(Å). When this embodiment is applied to the transmission type, a liquid crystal is packaged, a cell is fabricated, and the substrate 1 is then etched at a portion under the pixel part with an alkaline etching solution for Si such as a solution of TMAH (tetramethylammonium hydroxide) or KOH to form an undercut part 61 (Fig. 5K). When the display device is constructed as the reflection type, this process is unnecessary. In this embodiment, the peripheral circuit is formed with monocrystalline Si, so that high-speed drive is feasible. On the other hand, the switching transistors of the pixel part are constructed as the transmission type on the membrane. Therefore, a high-definition and high-image quality transmission type liquid crystal display device as demonstrated by at least 300,000 pixels per 15mm (0.6 inch)in diagonal is really provided. As described above, the material for the pixel electrodes may be suitably selected, whereby a reflection type liquid crystal display device may be constructed to reduce its cost. As described above, there can be constructed a display device in which the surfaces of pixel electrodes are even, and any difference in level between the pixel electrodes is smoothed. In the case of a reflection type display device, it is high in the reflection efficiency of light and contrast and can hence display images of high quality. In the case where the display device is constructed as a liquid crystal display device, the orientation characteristics of an orientation film is improved, and besides, no lateral electric field is generated between the individual pixel electrodes, so that the occurrence of bright lines which will lower the image quality is prevented, thereby preventing the deterioration of the image quality.

Claims: A method of producing an active matrix substrate for use in a display device, which active matrix substrate (1-13;4-11;50,54) comprises a substrate (1;50), a plurality of switching elements (4-9) provided on said substrate, and a plurality of conductive members (13) for defining a plurality of pixels (13,14 & 21), each of said conductive members being provided on said substrate and having a substantially even surface and being connected to a respective one of said switching elements, which method is performed by steps of: providing said substrate (1;50) having said plurality of switching elements (4-9) thereon; and producing said plurality of conductive members (13); characterised in that said step of producing the plurality of conductive members (13) is performed by sequential steps of: forming first and second insulating layers (10,11), said first insulating layer (10) having through holes (12), said second insulating layer (11) having a respective hole over each through hole (12) of said first insulating layer (10) so as to expose, through said each through hole (12) of said first insulating layer (10) and said respective hole of said second insulating layer (11), a contact portion (9) of a respective switching element (4-9); depositing a layer (13) of conductive material to cover said first and second insulating layers (10,11) and to contact each exposed contact portion (9) through a respective through hole (12) of said first insulating layer (10) and a respective hole of said second insulating layer (11); and removing a surface portion of said layer (13) of conductive material by chemical mechanical polishing, leaving conductive material within each through hole (12) and respective hole to obtain conductive members (13), separated by areas of said second insulating layer (11), to define said pixels. A method according to claim 1, wherein said chemical mechanical polishing is performed to result in each conductive member (13) having a specular surface. A method according to either of claims 1 or 2, wherein: said step of forming said first and second insulating layers (10,11) is performed by: covering said substrate (1) having said switching elements (4-9) with a first insulating layer (10) of a first insulating material; covering said first insulating layer (10) with a second insulating layer (11) of a second insulating material having an abrasion rate different from that of said conductive material, which latter (11) is to facilitate end point detection in said sequential step of chemical mechanical polishing; producing the holes by patterning said second insulating layer (11) to leave only areas by which pixels are to be separated, using said first insulating layer (10) as an etch stop; and forming said through-holes (12) to expose the respective contact portions (9) of the respective switching elements (4-9); and the thickness of the layer (13) of conductive material deposited in said sequential step of depositing is not less than the depth of said second insulating layer (11). A method according to claim 3 wherein said first insulating material (10) is of silicon nitride. A method according to claim 4 wherein said silicon nitride is deposited by plasma deposition. A method according to any of claims 3 to 5 wherein said second insulating material (11) is of phosphosilicate glass (PSG). A method according to any of claims 3 to 6 wherein the patterning of said second insulating material (11) is performed by dry etching. A method according to any preceding claim wherein said step of depositing said layer (13) of conductive material is performed by sputtering or electron beam deposition. A method according to any preceding claim, wherein said conductive material (13) is of metal or a metal compound. A method according to claim 9, wherein said metal is one of Al, Ti, Ta, or W. A method according to claim 9, wherein said metal compound is of indium tin oxide (ITO). A method according to any preceding claim wherein said layer (13) of conductive material is of thickness 1000 nm (10,000 Å) or more. A method according to any preceding claim wherein said substrate (1;50) is a semiconductor substrate (1). A method according to claim 13 wherein said semiconductor substrate (1) is of single crystal silicon. A method according to any of claims 1 to 12 wherein said substrate (1;50) is a transparent substrate (50). A method according to claim 15 wherein said transparent substrate (50) is of quartz. A method according to any preceding claim wherein each said switching element (4-9) is a transistor. A method according to claim 17, depending from claim 14, wherein each said transistor (4-9) has a single crystal silicon active layer (3,6,7,7'). A method according to claim 17, depending from claim 15, wherein each said transistor has a polycrystalline silicon active layer (52). A method according to claim 14 wherein the substrate (1) provided has a respective pixel capacitance electrode (30) connected to the contact portion (9) of each respective switching element (4-9), which pixel capacitance electrode (30) is arranged above and insulated from a counter electrode diffusion region (31) of said semiconductor substrate (1), forming a capacitor (30,2,31) therewith. A method according to any preceding claim wherein a respective insulated light shield (54) is provided over each switching element (4-9). A method according to claim 21 wherein each light shield (54) is of Ti, Ta or W. A method according to claim 22 wherein each light shield (54) has a means of connection to a fixed potential and is arranged in relation to a respective one of said conductive members (13) to form a pixel capacitance capacitor (54,10,13) therewith. A method according to any preceding claim which includes forming an orientation film (15) or a protective film (14) and an orientation film (15) on the polished surface of said conductive members (13) and polished surface of said second insulating layer (11) level therewith, and treating the surface of said orientation film for orientating liquid crystal molecules. A method of producing a liquid crystal display device comprising steps of: producing an active matrix substrate (1-13,15) by the method of any preceding claim; and constructing a liquid crystal display device including said active matrix substrate (1-13,15) by: providing an electrode bearing substrate (20-23, 15'); assembling said active matrix substrate (1-13,15) and said electrode bearing substrate (20-23,15') a spaced distance apart, introducing a liquid crystal material into the space between said substrates (1-13, 15 & 20-23, 15') and sealing. A method according to claim 25 wherein said electrode bearing substrate (15',20-23) includes a black matrix (22) and a plurality of colour filters (21) arranged to correspond to the pixels defined by said conductive members (13). A method according to either of claims 25 or 26, wherein the liquid crystal display device is formed with a spacer between said active matrix substrate (1-13,15) and said electrode bearing substrate (15',20-23). A method according to any of claims 25 to 27 wherein the active matrix substrate (1-13,15) is produced by the method of claim 14; and after construction of the device, a portion (61) of said single crystal silicon substrate (1) is removed from under each pixel (13,14,23) to allow transmission of light therethrough from the active matrix substrate (1-13,15) side of the display device.

Inventors: FUKUMOTO YOSHIHIKO, FUKUMOTO, YOSHIHIKO
Applicants: CANON KK, CANON KABUSHIKI KAISHA
Application year: 1996
Main classification: G02F1
IPC codes: G02F1, H01L29, H01L21, G09F9