REDUCED ELECTROMIGRATION INTERCONNECTION LINE

Abstract: The electromigration lifetime of a metal interconnection line is increased by adjusting the length of the interconnection line, or providing longitudinally spaced apart holes or vias, to optimize the Backflow Potential Capacity of the metal interconnection line.

Description: REDUCED ELECTROMIGRATION INTERCONNECTION LINE Technical Field The present invention relateε to a semiconductor device containing an interconnection line, and to a method of manufacturing the semiconductor device, wherein the lifetime of the interconnection line is maximize with respect to electromigration failure. Background Art Conventional semiconductor devices typically comprise a semiconductor substrate, a plurality of insulating and conductive levels formed thereon having a conductive interconnection pattern comprising features, such as a plurality of spaced apart conductive lines, and several types of conductive interconnection lines, such as bus lines, power supply lines and clock lines, having a width greater than the width of the minimum width conductive lines according to the design rule of the semiconductor device. Increasing demands for density and performance associated with ultra-large scale integration semiconductor wiring require responsive changes in interconnection technology which is considered one of the most demanding aspects of ultra-high scale integration technology. High density demands for ultra-large scale integration semiconductor wiring require planarized layers with minimal design features, including spacing between conductive lines. A limitation on the lifetime and reliability of conventional semiconductor devices attributed to conductive interconnection lines is due to electromigration. The phenomenon of electromigration involves the flow of electrons causing the migration of atoms, thereby generating voids and hillocks. The formation of voids creates an opening in a conductive interconnection line, thereby decreasing the performance of the interconnection line. The formation of voids generates areas of increased resistance which undesirably reduce the speed of a semiconductor device. Thus, the electromigration phenomenon constitutes a limitation on the lifetime of a conductive interconnection line as well as the performance of the semiconductor device. Electromigration in a metal interconnection line can be characterized ay the movement of ions induced by a high electrical current density. As the miniaturization of the feature sizes of semiconductor devices increases, the current density also increases and, hence, electromigration induced metallization failures increase. Current metallization failures resulting from electromigration exceed about 30% of the total of metallization failures. Prior attempts to restrain electromigration involve the use of overcoating, alloying, or multilevel metallization, which approaches do not directly address the electromigration phenomenon. In copending U.S. Patent Application Serial No. 08/476,512 (our Docket No. 1033-106 filed on June 7, 1995), an approach is disclosed to enhance the electromigration lifetime of a metal interconnection line by optimizing the width of the metal interconnection line consistent with the minimum time for 50% failure by electromigration according to the Bamboo Effect for the metal. The disclosed technique comprises the formation of one or more slots through the metal interconnection line, wherein the number, length and width of each slot is determined by the Bamboo Effect for that metal so that the total width of actual metal across the interconnection line is less than that which corresponds to the minimum time for 50% failure by electromigration according to the Bamboo Effect for that metal. In a study of the kinetics of electromigration in the 1970's, it was reported that electromigration induced metallic ion accumulation generates a chemical potential gradient which is capable of counteracting or driving the ions in the opposite direction caused by electromigration. This phenomenon is characterized as the Backflow Effect. See Blech, "Electromigration in thin aluminum films on titanium nitride," Journal of Applied Physics, Vol. 47, No. 4, April 1976, pp. 1203- 1208. The laboratory investigation conducted by Blech indicates that extremely short aluminum stripes did not exhibit signs of electromigration because it was operating below the threshold current density which was found to be approximately inversely proportional to stripe length. It is also reported that it is not clear whether surface electromigration is an important diffusion path. A subsequent research study on electromigration and the Backflow Effect is reported by Li et al., "Increase in Electromigration Resistance by Enhancing Backflow Effect," IEEE/RPS, 1992, pp. 211-216. Li et al. refer to the work of Dr. Blech and his study of the kinetics of electromigration and the Backflow Effect which was characterized as an inverse electromigration effect which can be employed to offset a certain amount of electromigration induced ion flow. The work reported by Li et al. is directed to enhancing the Backflow Effect and, hence, decreasing electromigration. Li et al. report that according to the basic theory of electromigration, the important factors are electrical current density, thin film εtructure, temperature and gradients. It is also reported that for a particular metal, i.e., a particular elemental metal or a particular alloy, there exists a Backflow Potential Capacity which depends upon the gap distance or length of a metal εtripe of the metal. Such a dependence of the Backflow Potential Capacity on the gap diεtance iε εhown in Fig. 1 for aluminum. In the discussion, Li et al. report the results of experimentation and an attempt to utilize the Backflow Potential Capacity in order to reduce electromigration. In the first reported experimentation, a discontinuous εilicon dioxide pasεivation film waε employed to provide non-uniform compreεsion on an aluminum film, thereby altering the aluminum ion migration velocity along the stripe. This result was said to cause the aluminum ions to accumulate in an anode region, thereby depleting the cathode region and producing a backward ion-backflow to offset electromigration. Based on the observed results, a simplified theoretical model waε propoεed to explain the Backflow Effect. In the εecond reported experimentation, the difference in electromigration reεistance between two different types of metal materials, titanium and an aluminum alloy containing 2% copper, was employed to generate a Backflow Effect. However, the successful application of the Backflow Effect to reduce electromigration in actual semiconductor deviceε has, to our knowledge, not yet been implemented. The continuing demand for increaεed miniaturization requires conductive patterns compriεing featureε, such as conductive lineε and interwiring spacings, less than about 1.0 micron. Semiconductor deviceε compriεing conductive patterns having submicron design features are characterized by a high electrical current denεity and, consequently, increased metallization electromigration failures. The requirement for a long electromigration lifetime is of critical importance for an interconnection syεtem. Thuε, there exiεts a need in the semiconductor art for increasing the electromigration lifetime of an interconnection line. Disclosure of the Invention An object of the present invention iε a highly integrated semiconductor device containing an interconnection structure having an enhanced electromigration lifetime. Another object is an improved method of manufacturing a semiconductor device having a metal interconnection line with an enhanced electromigration lifetime. Additional objects, advantageε and other featureε of the invention will be set forth in part in the description which follows and in part will become apparent to those having ordinary εkill in the art upon examination of the following or may be learned from practice of the invention. The objectε and advantageε of the invention may be realized and obtained aε particularly pointed out in the appended claimε. According to the preεent invention, the foregoing and other objectε are achieved in part by a semiconductor device compriεing: a conductive pattern having features; an inεulating layer formed on the conductive pattern; and a metal interconnection line formed on the insulating layer; wherein the metal interconnection line haε a length less than the length corresponding to the minimum Backflow Potential Capacity for the metal interconnection line. Another aεpect of the preεent invention iε a εemiconductor device compriεing: a conductive pattern having featureε; a firεt inεulating layer formed on the conductive pattern; a firεt metal interconnection line formed on the firεt inεulating layer; a εecond inεulating layer formed on the firεt metal interconnection line; and at least two longitudinally spaced apart first conductive vias formed through the εecond inεulating layer in electrical contact with the first metal interconnection line at firεt contact points εeparated by a firεt diεtance longitudinally which is leεε than the length correεponding to the minimum Backflow Potential Capacity for the firεt metal interconnection line. A further aεpect of the preεent invention iε a εemiconductor device comprising: a conductive pattern having features; an insulating layer formed on the conductive pattern; a metal interconnection line formed on the insulating layer and having at least two longitudinally spaced apart openings; wherein the length of the metal interconnection line is greater than the length corresponding to the minimum Backflow Potential Capacity for the metal interconnection line occurε, and the longitudinal distance between the two openings is less than the length corresponding to the minimum Backflow Potential Capacity for the metal interconnection line. Another aspect of the present invention is a semiconductor device comprising a conductive pattern having featureε; an inεulating layer formed on the conductive pattern; a metal interconnection line formed on the inεulating layer having an opening therethrough; wherein the length of the metal interconnection line is greater than the length corresponding to the minimum Backflow Potential Capacity for the metal interconnection line and the longitudinal distance from either end to the opening iε leεε than the length corresponding to the minimum Backflow Potential Capacity for the metal interconnection line. A further aspect of the preεent invention is a method of manufacturing a εemiconductor device, which method comprises: forming a first inεulating layer; forming a conductive pattern by a damaεcene procesε, wherein the conductive pattern compriεeε a plurality of conductive lines; forming a second insulating layer on the conductive pattern; forming a metal interconnection line on the second insulating layer; wherein, the length of the metal interconnection line iε less than length correεponding to the minimum Backflow Potential Capacity for the metal interconnection line. Additional objectε and advantageε of the preεent invention will become readily apparent to thoεe skilled in this art from the following detailed description, wherein only the preferred embodiment of the invention iε εhown and deεcribed, εimply by way of illustration of the beεt mode contemplated for carrying out the invention. Aε will be realized, the invention iε capable of other and different embodiments, and its several details are capable of modifications in various obvious respectε, all without departing from the invention. Accordingly, the drawingε and deεcription are to be regarded aε illuεtrative in nature, and not as restrictive. Brief Description of Drawings Fig. 1 iε a curve illuεtrating the Backflow Potential Capacity for an aluminum. Fig. 2 iε a top view of a multilevel interconnection in accordance with the preεent invention. Fig. 3 iε a croεε-sectional view of a multilevel interconnection in accordance with the present invention. Figs. 4A and 4B are top views of interconnection lines in accordance with the present invention. Description of the Invention The electromigration lifetime of a metal interconnection line constitutes a significant limitation of the capabilitieε of conventional εemiconductor devices, particularly high density deviceε. The electromigration failure limitation becomes particularly acute as the integrated semiconductor device becomes increasingly higher in performance (faster operating frequency) due to the corresponding increaεe in current denεity which increases the electromigration phenomenon. The present invention addresses and solves that problem by extending the electromigration lifetime of a metal interconnection line, and improving the performance of the semiconductor device. In accordance with the preεent invention, the Backflow Potential Capacity iε optimized for the particular εpecieε of metal employed in a metal interconnection line in a semiconductor device. In an embodiment of the present invention, the effective length of a particular metal interconnection line iε optimized and/or controlled by appropriate engineering and deεign to optimize the Backflow Potential Capacity, thereby minimizing electromigration and enhancing the electromigration lifetime of a metal interconnection line. The current dramatic decreaεe in the design rule of εemiconductor deviceε and the ever increasing demand for higher and higher performance in semiconductor devices, requiring conductive patterns with minimal deεign features, exacerbateε metallization failure due to electromigration. However, the reduction in the design rule into the submicron range enables the strategic placement of metal interconnection lines having a length purposely designed to optimize the Backflow Potential Capacity for that particular metal. Thuε, one embodiment of the preεent invention compriεeε a semiconductor device comprising a conductive pattern having features in accordance with a given design rule with an insulating layer formed on the conductive pattern. A metal interconnection line is formed on the insulating layer having a length less than the length corresponding to the minimum Backflow Potential Capacity for that particular metal interconnection line. In practicing the preεent invention, one having ordinary εkill in the art would readily understand that the minimum Backflow Potential Capacity for a particular metal, i.e., elemental metal or metal alloy, must be determined for that particular metal, such aε for aluminum as shown in Fig. 1. In accordance with the present invention, various conductive metals can be employed for the interconnection line, such as aluminum, aluminum alloys, copper, copper alloys, εilver, silver alloys, gold, gold alloys, refractory metals, refractory metal compounds and refractory metal alloys. The use of a metal interconnection line less than the length corresponding to the minimum Backflow Potential Capacity for the metal can be applied in semiconductor devices having a conductive pattern comprising featureε, preferably featureε greater than about three timeε the minimum allowable feature for a given deεign rule. After extenεive reεearch and experimentation, it waε found that the Backflow Potential Capacity can be employed to reduce electromigration in metal interconnection lines even though the metal interconnection line has a length greater than the length corresponding to the minimum Backflow Potential Capacity for that metal interconnection line. Thus, in accordance with the present invention, the electromigration lifetime of a metal interconnection line iε enhanced by optimizing the Backflow Potential Capacity for that metal interconnection line for conductive patterns having features in the submicron range, as well as featureε of one micron or greater, in which it is impractical or inefficient to limit the length of the metal interconnection line to lesε than the length correεponding to the minimum Backflow Potential Capacity for that metal interconnection line. In accordance with another embodiment of the preεent invention, a metal interconnection line is formed in a εemiconductor device having a length greater than the length correεponding to the minimum Backflow Potential Capacity for the particular metal interconnection line and in which the Backflow Potential Capacity iε optimized to reduce electromigration and, hence, enhance the electromigration lifetime of the metal interconnection line. In one aεpect of thiε embodiment, a metal interconnection line is formed on an inεulating layer, which metal interconnection line haε a length greater than the length corresponding to the minimum Backflow Potential Capacity for the metal interconnection line. However, one or at least two longitudinally εpaced apart openings are formed through the metal interconnection line. When employing a single opening, the distance between the opening and each end of the metal interconnection line is lesε than the length corresponding to the minimum Backflow Potential Capacity for the metal interconnection line. When employing at least two longitudinally spaced apart openings, the distance between the two longitudinally spaced apart openings is less than the length corresponding to the minimum Backflow Potential Capacity for the metal interconnection line. As shown in Fig. 4A, metal interconnection line 40 is provided with a plurality of longitudinally spaced apart openings 41, preferably longitudinally aligned. Holes 41 are εeparated by a longitudinal distance L wherein L iε less than the length corresponding to the minimum Backflow Potential Capacity for the metal interconnection line. In Fig. 4B, another embodiment is shown wherein the width of the metal interconnection line 40 iε wider than that depicted in Fig. 4A. As shown in Fig. 4B, a plurality of longitudinally spaced apart openings 42 are provided in metal interconnection line. Preferably, the longitudinal distance between two longitudinally aligned openingε, εuch aε the diεtance _,-, between longitudinally aligned openingε 42A, the diεtance L ; between longitudinally aligned openings 42B, and the distance L 3 between longitudinally aligned openings 42C, is lesε than the length correεponding to the minimum Backflow Potential Capacity for the metal interconnection line 40. It is not fully understood why the provision of openings through the metal interconnection lineε longitudinally εpaced apart by a distance lesε than the length correεponding to the minimum Backflow Potential Capacity for the metal interconnection line reduceε electromigration. While not wishing to be bound by any particular theory, it is believed that the provision of an opening or hole, which is filled with insulating material, presentε a diεcontinuity which decreases the mass transport of the metal ions of the metal interconnection layer. Thus, holeε are provided through the metal interconnection line along the longitudinal length of the metal interconnection line εpaced apart by a distance less than the length correεponding to the Backflow Potential Capacity for the particular metal interconnection line. For metal interconnection lines for a particular metal having a short enough length, only a single hole need be provided to optimize the Backflow Potential Capacity for that particular metal. In the variouε embodimentε of the preεent invention, the length correεponding to the minimum Backflow Potential Capacity must be determined for each particular metal employed for the metal interconnection line, εimilar to a manner determined for aluminum aε in Fig. 1. Aε shown in Fig. 1, the Backflow Potential Capacity for a particular metal, i.e., elemental metal or alloy, increases as the length of the metal line is reduced. This Backflow Potential Capacity increases the chemical potential gradient in a direction opposite to electromigration and, in effect, causes the Backflow Effect. Thus, in accordance with the present invention, the electromigration of a lifetime of a metal interconnection line having a length consistent with deεign requirementε is enhanced by the formation of one or more openings through the metal interconnection line spaced apart in the longitudinal direction, wherein the distance between each end of the metal interconnection line and a opening, or the longitudinal diεtance between the εpaced apart openings, is less than the length correεponding to the minimum Backflow Potential Capacity for the particular metal interconnection line. The optimum size of the opening depends upon the particular metal and the width of the metal interconnection line, and could easily be determined in a particular situation by one having ordinary skill in the art. The openings in the metal interconnection line can be formed by conventional photolithographic and etching techniques, particularly anisotropic etching, such as reactive ion etching. Damascene techniques can also be employed to form the openingε. Other embodiments of the present invention wherein the Backflow Potential Capacity of a metal interconnection line is optimized, thereby minimizing electromigration failures, are applicable to multilevel interconnection patterns. Typically, semiconductor devices comprises a substrate and a plurality of consecutive levels of insulating layerε and metal interconnection lines formed thereon which are electrically connected between vertical levels by conductive vias or through-holes formed in insulating layers filled with conductive material. In one embodiment of the present invention, the longitudinal distance between the contact pointε of conductive vias on the surface of a metal interconnection line is strategically designed so that it is lesε than the length correεponding to the minimum Backflow Potential Capacity for the particular metal interconnection line. Thuε, in accordance with the preεent invention, a εemiconductor device iε formed compriεing a conductive pattern and a firεt insulating layer formed on the conductive pattern. A first metal interconnection line iε formed on the first insulating layer and a εecond inεulating layer is formed on the firεt metal interconnection line. At leaεt two εpaced apart firεt conductive viaε are formed through the second insulating layer in electrical contact with the first metal interconnection line at first longitudinally spaced apart contact points a first longitudinal diεtance which iε leεε than the length correεponding to the minimum Backflow Potential Capacity for the firεt metal interconnection line. Therefore, the length of the firεt metal interconnection line can exceed the length correεponding to the minimum Backflow Potential Capacity for the firεt metal interconnection line, while optimizing the Backflow Potential Capacity of the metal interconnection line to reduce electromigration failure. The metal interconnection can be provided with more than two contact points with conductive vias, or a single contact point, and the Backflow Potential Capacity optimized by limiting the longitudinal distance between each contact point, or the diεtance between each end of the metal interconnection line and a contact point to leεε than the length corresponding to the minimum Backflow Potential Capacity. It iε not fully understood why the strategic longitudinal spacing of contact points of conductive vias on a metal interconnection line by a distance less than the length correεponding to the minimum Backflow Potential Capacity for the metal interconnection line enhanceε the Backflow Effect and reduces electromigration. Although not wiεhing to be bound by any particular theory, it is believed that the conductive vias provide surface diεcontinuitieε in the metal interconnection line which reduce maεε tranεfer and, hence, electromigration. In another embodiment of the preεent invention, the Backflow Potential Capacity iε further optimized by employing a material to fill the conductive via different from the metal of the interconnection line, thereby providing a further discontinuity to further reduce mass transfer of ions from one level to another. When employing an aluminum or aluminum alloy metal interconnection line, it is preferred to employ a tungsten plug filling the via. In another aspect of this embodiment, an aluminum or aluminum alloy plug is employed with a barrier layer interposed between the plug and the aluminum or aluminum alloy interconnection line. Typical barrier materials can be employed, such aε tungsten, tungsten-titanium, titanium, titanium/titanium nitride, titanium nitride or titanium oxynitride. In yet another aspect of this embodiment, an aluminum or aluminum alloy plug is employed in combination with an aluminum or aluminum alloy interconnection line, employing an anti-reflective coating on the aluminum or aluminum alloy plug in the via. Anti-reflective coatings are conventional in the art and can comprise titanium nitride or titanium oxynitride. The present invention also involves the combined use of a barrier layer and anti-reflective coating when providing an aluminum or aluminum alloy plug in a via in electrical contact with an aluminum or aluminum alloy interconnection line. The use of a barrier layer and/or anti-reflective coating presentε a diεcontinuity in the material thereby decreaεing mass transport and the diffusion effect of electromigration. In another embodiment of the present invention, the Backflow Effect is utilized to reduce electromigration failure in a plurality of metal interconnection lineε on different levelε in electrical contact through a conductive via. In one aεpect of thiε embodiment, a first insulating layer iε formed on a conductive pattern, and a firεt metal interconnection line formed on the first insulating layer. A εecond inεulating layer iε formed on the firεt metal interconnection line with at least two longitudinally εpaced apart firεt conductive vias formed through the second inεulating layer in electrical contact with the firεt metal interconnection line at firεt longitudinally εpaced apart contact pointε εeparated by a first longitudinal distance which is lesε than the length corresponding to the minimum Backflow Potential Capacity for the first metal interconnection line. A second metal interconnection line is then formed on the second insulating layer. The Backflow Effect is optimized for the second metal interconnection line. This objective is achieved in accordance with various aspects of the present invention. For example, the Backflow Effect is optimized for the second metal interconnection line by confining itε length to less than the length corresponding to the minimum Backflow Potential Capacity for the second metal interconnection line. It was found that if the width of the first and εecond metal interconnection lineε are εubεtantially the εame, the optimum length of the second metal interconnection line L : is represented by the formula: .-D ■ (—); wherein (1) Di is the firεt longitudinal diεtance, T : is the thickness of the second metal interconnection line and Tj iε the thickneεε of the firεt metal interconnection line. It waε further found that if the width of the firεt and εecond metal interconnection lineε are not substantially equal, the optimum length of the second metal interconnection line L_ is represented by the formula: T w L -D. {—) (—); wh erein , (2) Dj, T : and T_ are aε previously defined, W : is the width of the second eral interconnection line and Wi iε the width of the firεt metal interconnection line. In another aεpect of thiε embodiment, the Backflow Effect for the εecond metal interconnection line is optimized by providing at least one hole through the second metal interconnection line, wherein the distance between each end of the second metal interconnection line and the hole, or the distance between two longitudinally spaced apart holes, iε less than the length corresponding to the minimum Backflow Potential Capacity for the second metal interconnection line. In another embodiment of the present invention wherein the Backflow Effect is utilized to reduce electromigration failure in multilevel metal interconnection lines, the second metal interconnection line formed on the second insulating layer is in electrical contact with one of the first conductive viaε at a εecond contact point. A third inεulating layer is formed on the second metal interconnection line in electrical contact and at leaεt one εecond conductive via iε formed through the third inεulating layer in electrical contact with the εecond metal interconnection line at a third contact point longitudinally εpaced apart from the εecond contact point on the εecond metal interconnection line by a second longitudinal diεtance which iε leεε than the length correεponding to the minimum Backflow Potential Capacity for the εecond metal interconnection line. In thiε embodiment, if the width of the preεent invention, wherein the first and εecond interconnection lineε are substantially the same, the second optimum longitudinal distance D iε represented by the formula: 0,-D, 1 (— rp ); wherein * 3 Di, D 2 and T α are as previouεly defined. If the width of the firεt metal interconnection line iε not essentially the same or subεtantially the εame aε the width of the εecond metal interconnection line, D 2 iε repreεented by the formula: T -v D.-D (—) (— ) ; wherein (4) Dj, D 2 , T 2 , Ti, W 2 and W α are aε previouεly defined. Fig. 2 εchematically illuεtrateε a top view of a multilevel metal interconnection pattern in accordance with the preεent invention, wherein the firεt metal interconnection line 21 haε a width W α . Electrically conductive viaε 23A and 23B are provided in electrical contact with the firεt metal interconnection line 21 at longitudinally spaced apart contact points, separated by a firεt longitudinal diεtance Di. A εecond metal interconnection line 22 iε εituated on a level above firεt metal interconnection line 21 and in electrical contact with conductive viaε 23 and 23C at longitudinally εpaced apart contact pointε εeparated by a εecond longitudinal diεtance D . In accordance with the preεent invention D : and D_ are chosen in accordance with formulas 3 and 4 (each one) , depending upon whether the widthε of the first and second metal interconnection lineε are εubstantially the same or different, reεpectively. In Fig. 3 a croεs-sectional view of a metal interconnection pattern in accordance with the preεent invention iε depicted, wherein firεt metal interconnection line 31 iε in electrical contact with εecond metal interconnection layer 32 by meanε of conductive viaε 33. The first metal interconnection line has a thicknesε T 2 and the εecond metal interconnection line haε a thickneεε T.. In thiε embodiment, the use of barrier layerε 34A and 34B are shown together with anti- reflective coatings 35A and 35B. The length of the second metal interconnection line 32 is selected in accordance with formula (1) or (2) , depending upon whether the widths of the first and second metal interconnection lines are substantially the same or different, respectively. The present invention is applicable of all types of semiconductor devices wherein metal interconnection lines are provided, such as buε lineε, power supply lines and/or clock lines. In carrying out the present invention, conventional methods of forming conductive patternε compriεing featureε, εuch aε a plurality of spaced apart conductive lineε, and metal interconnection lines can be employed, such as conventional photolithographic techniques, etching techniques and damascene techniques. The present invention is applicable to εemiconductor deviceε compriεing interconnection patternε having a wide range of dimenεions, including submicron dimensions, which conductive patterns are formed in a conventional manner, as by conventional etch back techniqueε or εingle and/or dual damaεcene techniqueε. Typically, a first inεulating layer iε depoεited and a conductive pattern formed. The conductive pattern can be formed by conventional etch back techniqueε involving the depoεition of a metal layer and etching to form a conductive pattern compriεing a plurality of spaced apart conductive lineε. The conductive pattern can alεo be formed by a damaεcene technique in which openingε are formed in the inεulating layer and metal depoεited in the openings to form the conductive pattern. Subεequently, a second insulating layer iε deposited and a metal interconnection line iε formed on the εecond inεulating layer. The conductive pattern and interconnection line can be formed by a dual damaεcene technique in which the conductive pattern and metal interconnection line are depoεited by a single metal deposition process. Damascene is an art which has been employed for centuries in the fabrication of jewelry, and has recently been adapted for application in the semiconductor industry. Damascene basically involveε the formation of a trench which iε filled with a metal. Thuε, damaεcene differs from the traditional etch back techniques of providing an interconnection structure by forming a pattern of trenches in a dielectric layer, which trenches are filled in with metal to form the conductive pattern followed by planarization vis-a-viε the traditional etch back technique of depoεiting a metal layer, forming a conductive pattern with interwiring εpacings, and filling in the interwiring spacings with dielectric material. Single and dual damascene techniqueε have also been employed to form openings in a dielectric layer which are εubεequently filled with metal. The application of damaεcene techniqueε to the manufacture of εemiconductor deviceε iε disclosed in Joshi, "A New Damaεcene Structure for Submicrometer Interconnect Wiring," IEEE Electron Letterε, Vol. 14, No. 3, March 1993, pp. 129-132; Kaanta et al., "Dual Damaεcene: A ULSI Wiring Technology," June 11-12, 1991, VMIC Conference, IEEE, pp. 144-152; Kenney et al., "A Buried-Plate Trench Cell for a 64-Mb DRAM," 1992 Symposium on VLSI Technology Digeεt of Technical Paperε, IEEE, pp. 14-15; U.S. Patent No. 5,262,354; and U.S. Patent No. 5,093,279. After formation of the wiring pattern, planarization iε effected aε by chemical- mechanical poliεhing. In carrying out the preεent invention, the interconnection line can be formed of any metal typically employed for forming an interconnection line, such as aluminum, aluminum alloys, copper, copper alloyε, gold, gold alloyε, silver, silver alloys, refractory metalε, refractory metal alloys, and refractory metal compoundε. A conventional adhesion/barrier layer can also be employed, such aε titanium, titanium-tungsten, titanium nitride, or titanium oxynitride. The metal interconnection line of the present invention can be formed by any technique conventionally employed in the manufacture of semiconductor devices. For example, the method interconnection line can be formed by conventional metallization techniques, such as various types of chemical vapor depoεition (CVD) procesεeε, including low pressure chemical vapor deposition (LPCVD) , and plasma enhanced chemical vapor deposition (PECVD) . Normally, when high melting metal points such as tungsten are depoεited, CVD techniqueε are employed. Low melting point metals, such as aluminum and aluminum-base alloys, including aluminum-copper alloyε, can be depoεited by melting, εputtering, or phyεical vapor deposition (PVD) . The present invention iε alεo applicable to the manufacture of εemiconductor deviceε compriεing a plurality of conductive patternε formed on different levelε, including conductive patternε formed by etch back techniqueε and/or damascene and dual damaεcene techniqueε. In a preferred embodiment, εuch semiconductor devices comprising a plurality of conductive patternε on different levels alεo comprise a plurality of metal interconnection lineε, having a length leεε than the length corresponding to the minimum Backflow Potential Capacity for the metal interconnection line, or having a length adjusted, aε by openings or vias, so that the diεtance between the openings or vias is less than the length corresponding to the minimum Backflow Potential Capacity for the metal interconnection line, thereby reducing electromigration and enhancing the electromigration lifetime of the metal interconnection line. The εemiconductor deviceε to which the claimed invention iε directed generally compriεe inεulating layerε formed of insulating materials conventionally employed in the manufacture of semiconductor devices, εuch aε εilicon dioxide, including silicon dioxide formed by thermal oxidation, vapor deposition and/or derived from depoεited tetraethyl orthoεilicate (TEOS) , silicon nitride, silicon oxynitrides and/or low dielectric conεtant materialε. Inεulating material can be depoεited in a conventional manner, aε by CVD or thermal enhanced CVD and εpin-on techniqueε. The variouε embodimentε of the preεent invention involve a conventional εemiconductor substrate, such aε monocrystalline εilicon. Thuε, in accordance with the present invention, the length of a metal interconnection line is advantageously selected in accordance with the design requirements for a particular integrated circuit, while advantageously maximizing the electromigration lifetime by optimizing the Backflow Potential Capacity for the particular metal interconnection line, as by selecting an appropriate line length, providing one or more strategically longitudinally spaced holes or adjusting the distance between the points at which the metal interconnection line iε in electrical contact with conductive viaε, εo that the longitudinal distance between the holes or viaε iε leεε than the length correεponding to the minimum Backflow Potential Capacity of the metal interconnection line. Only the preferred embodiment of the invention and an example of its versatility are shown and described in the present discloεure. It iε to be understood that the invention is capable of uεe in various other combinationε and environmentε and iε capable of changeε or modificationε within the scope of the inventive concept as expressed herein.

Claims: CLAIMS 1. A εemiconductor device compriεing: a conductive pattern having featureε; an inεulating layer formed on the conductive pattern; and a metal interconnection line formed on the inεulating layer; wherein the metal interconnection line haε a length leεs than the length corresponding to the minimum Backflow Potential Capacity for the metal interconnection line. 2. The semiconductor device according to claim 1, wherein the metal is selected from the group consiεting of aluminum, aluminum alloyε, copper, copper alloyε, εilver, silver alloyε, gold, gold alloys, refractory metals, refractory metal compounds and refractory metal alloys. 3. The semiconductor device according to claim 2, wherein the metal compriseε aluminum or an aluminum alloy. 4. The εemiconductor device according to claim 1, wherein the conductive pattern compriεeε featureε greater than about three timeε the minimum allowable feature for a give deεign rule. 5. A semiconductor device comprising: a conductive pattern having features; a firεt inεulating layer formed on the conductive pattern; a firεt metal interconnection line formed on the firεt inεulating layer; a εecond inεulating layer formed on the firεt metal interconnection line; and at leaεt two longitudinally εpaced apart firεt conductive viaε formed through the εecond inεulating layer in electrical contact with the firεt metal interconnection line at firεt contact pointε εeparated by a first longitudinal distance which is leεε than the length correεponding to the minimum Backflow Potential Capacity for the firεt metal interconnection line. 6. The εemiconductor device according to claim 5, wherein the firεt metal interconnection line compriεe a metal εelected from the group conεisting of aluminum, aluminum alloys, copper, copper alloyε, εilver, εilver alloyε, gold, gold alloyε, refractory metalε, refractory metal compoundε and refractory metal alloyε. 7. The semiconductor device according to claim 6, wherein the metal iε aluminum or an aluminum alloy. 8. The semiconductor device according to claim 6, wherein the firεt conductive viaε are filled with a metal. 9. The semiconductor device according to claim 7, wherein the firεt conductive viaε are filled with aluminum or an aluminum alloy, and a barrier layer is interposed between the aluminum or aluminum alloy and the firεt metal interconnection line. 10. The semiconductor device according to claim 9, wherein the barrier layer compriseε titanium, titanium- tungsten or titanium nitride. 11. The semiconductor device according to claim 7, wherein the firεt conductive vias are filled with aluminum or an aluminum alloy, and an anti-reflection coating iε provided on the aluminum or aluminum alloy. 12. The εemiconductor device according to claim 11, wherein the anti-reflection coating compriεeε titanium or titanium oxynitride. 13. The εemiconductor device according to claim 8, wherein the metal iε tungεten. 14. The εemiconductor device according to claim 5, wherein the length of the firεt metal interconnection line iε greater than the length correεponding to the minimum Backflow Potential Capacity for the firεt metal interconnection line. 15. The εemiconductor device according to claim 5, further compriεing a εecond metal interconnection line formed on the εecond inεulating layer and in electrical contact with one of the firεt conductive viaε at a εecond contact point. 16. The εemiconductor device according to claim 15, wherein the εecond metal interconnection line haε a length leεε than the length corresponding to the minimum Backflow Potential Capacity for the εecond metal interconnection line. 17. The εemiconductor device according to claim 15, further compriεing: a third inεulating layer formed on the second metal interconnection line; and at least one second conductive via formed through the third insulating layer in electrical contact with the second metal interconnection line at a third contact point longitudinally spaced apart from the εecond contact point on the εecond metal interconnection line by a εecond longitudinal distance which is less than the length correεponding to the minimum Backflow Potential Capacity for the εecond metal interconnection line. 18. The semiconductor device according to claim 15, wherein the width of the first metal interconnection line is essentially the εame aε the width of the εecond metal interconnection line. 19. The εemiconductor device according to claim 18, wherein the length of the second metal interconnection line (L 2 ) is represented by the formula: L.-D. ( — T 2 ) ; wherein Dj iε the firεt longitudinal diεtance ; T 2 iε the thickneεε of the εecond metal interconnection line , and Tj iε the thickneεε of the firεt metal interconnection line . 20. The εemiconductor device according to claim 17 , wherein the width of the firεt metal interconnection line iε eεεentially the εame as the width of the second metal interconnection line . 21. The semiconductor device according to claim 20 , wherein the second longitudinal distance D is represented by the formula : T D.'D. ( — - ) ; wherein D ; is the first longitudinal distance, T ^ iε the thickneεε of the εecond metal interconnection line and T 2 iε the thickneεε of the first metal interconnection line. 22. The εemiconductor device according to claim 15, wherein the width of the first metal interconnection line is not subεtantially equal to the width of the εecond metal interconnection line. 23. The εemiconductor device according to claim 22, wherein the length of the second metal interconnection line (L_) is represented by the formula: L -DΛ ); wherein Dj is the first longitudinal diεtance, T 2 iε the thickneεε of the εecond metal interconnection line; T : iε the thicknesε of the first metal interconnection line; W 2 is the width of the εecond metal interconnection line; and W iε the width of the firεt metal interconnection line. 24. The εemiconductor device according to claim 17, wherein the width of the firεt metal interconnection line iε not εubεtantially equal to the width of the εecond metal interconnection line. 25. The εemiconductor device according to claim 24, wherein the second longitudinal distance (DJ is represented by the formula: T w Dr-DA — ) (—); wherein 2 x T. W, Dj is the first longitudinal diεtance, T 2 iε the thickneεε of the εecond metal interconnection line; T x is the thickneεε of the firεt metal interconnection line; W 2 iε the width of the second metal interconnection line; and Wi is the width of the firεt metal interconnection line. 26. The εemiconductor device according to claim 17, wherein the length of the εecond metal interconnection line iε greater than the length correεponding to the minimum Backflow Potential Capacity for the εecond metal interconnection line. 27. The εemiconductor device according to claim 15, wherein the second metal interconnection layer has a length greater than the length correεponding to the minimum Backflow Potential Capacity for the second metal interconnection line; and the second metal interconnection layer comprises at least two longitudinally spaced apart openings extending therethrough; wherein the longitudinal distance between the two openingε is lesε than the length corresponding to the minimum Backflow Potential Capacity for the second metal interconnection line. 28. The semiconductor device according to claim 5, wherein the conductive pattern compriseε featureε greater than about three timeε the minimum allowable feature for a given design rule. 29. A semiconductor device comprising: a conductive pattern having features; an insulating layer formed on the conductive pattern; a metal interconnection line formed on the insulating layer and having at least two longitudinally εpaced apart openingε; wherein the length of the metal interconnection line iε greater than the length correεponding to the minimum Backflow Potential Capacity for the metal interconnection line occurε, and the longitudinal diεtance between the two openingε iε leεε than the length correεponding to the minimum Backflow Potential Capacity for the metal interconnection line. 30. The εemiconductor device according to claim 29, wherein the conductive pattern compriεeε featureε greater than about three timeε the minimum allowable feature for a given deεign rule. 31. The εemiconductor device according to claim 29, wherein the openingε are longitudinally aligned. 32. A semiconductor device comprising: a conductive pattern having features; an inεulating layer formed on the conductive pattern; a metal interconnection line formed on the inεulating layer having an opening therethrough; wherein the length of the metal interconnection line iε greater than the length correεponding to the minimum Backflow Potential Capacity for the metal interconnection line and the longitudinal distance from each end to the opening iε leεε than the length correεponding to the minimum Backflow Potential Capacity for the metal interconnection line. 33. A method of manufacturing a semiconductor device, which method compriseε: forming a firεt insulating layer; forming a conductive pattern, by a damaεcene process, wherein the conductive pattern comprises a plurality of conductive lines; forming a second insulating layer on the conductive pattern; forming a metal interconnection line on the second insulating layer; wherein, the length of the metal interconnection line is leεε than length correεponding to the minimum Backflow Potential Capacity for the metal interconnection line. 34. The method according to claim 33, wherein the conductive pattern and the metal interconnection line are formed by a dual damascene technique. 35. The method according to claim 34, further comprising forming a third insulating layer on the first metal interconnection layer; and forming at least two longitudinally spaced apart conductive vias through the second insulating layer in electrical contact with the firεt metal interconnection line at contact pointε longitudinally εeparated by a diεtance which iε leεε than the length correεponding to the minimum backflow capacity for a firεt metal interconnection line.

Inventors: BUI NGUYEN DUC, WOLLESEN DONALD L, BUI, NGUYEN, DUC, WOLLESEN, DONALD, L.
Applicants: ADVANCED MICRO DEVICES INC, ADVANCED MICRO DEVICES, INC.
Application year: 1996
Main classification: H01L23
IPC codes: H01L23