A METHOD FOR EPITAXIALLY GROWING OBJECTS AND A DEVICE FOR SUCH A GROWTH

Abstract: In a method for epitaxially growing objects of SiC, a Group III-nitride or alloys thereof on a substrate (13) received in a susceptor (7) having circumferential walls (8) these walls and by that the substrate and a source material (24) for the growth are heated above a temperature level from which sublimation of the material grown starts to increase considerably. The carrier gas flow is fed into the susceptor towards the substrate for carrying said source material to the substrate for said growth. At least a part of said source material for said growth is added to the carrier gas flow upstream the susceptor (7) and carried by the carrier gas flow to the susceptor in one of a) a solid state and b) a liquid state for being brought to a vapour state in a container comprising said susceptor by said heating and carried in a vapour state to said substrate for said growth.

Description: A method for epitaxially growing objects and a device for such a growth TECHNICAL FIELD OF THE INVENTION AND PRIOR ART The present invention relates to a method for epitaxially growing objects of one of a) SiC, b) a Group Ill-nitride and c) alloys thereof on a substrate received in a suscep¬ tor having circumferential walls, in which these walls and by that the substrate and a source material for the growth are heated above a temperature level from which sublima¬ tion of the material grown starts to increase consider¬ ably, and a carrier gas flow is fed into the susceptor to¬ wards the substrate for carrying said source material to the substrate for said growth, as well as a device for epitaxially growing such objects according to the preamble of the appended independent device claim. Accordingly, the invention is applicable to the growth of SiC, Group Ill-nitrides and all types of alloys thereof, but the common problem of growing such objects of a high crystalline quality and at a reasonable growth rate from the commercial point of view will now by way of a non- limitative example be further explained for SiC. SiC single crystals are in particular grown for being used in different types of semiconductor devices, such as for example different types of diodes, transistors and thyris¬ tors, which are intended for applications in which it is possible to benefit from the superior properties of SiC in comparison with especially Si, namely the capability of SiC to function well under extreme conditions. The large band gap between the valence band and the conduction band of SiC makes devices fabricated from said material able to operate at high temperatures, namely up to 1000 K. There are different techniques known for the epitaxial growth of Silicon Carbide, of which the technique of seeded sublimation growth is at present the commonly used for growing Silicon Carbide crystals for subsequent sub- strate production. This technique is limited both with re¬ spect to crystalline quality and purity. The substrates produced by this method are perforated with holes called micropipes and have additionally a mosaic structure re¬ lated to grains of slightly different crystal orientation. The growth of the crystals is made by subliming a source powder of SiC in a container. The SiC vapours are trans¬ ported to the seed crystal by an artificially applied thermal gradient. The growth rate is determined by the de¬ gree of supersaturation of said vapours in the atmosphere around the seed crystal, which in its turn is determined by the temperature, the applied temperature gradient and the presεure in the system. The vapour transport iε thus characterized by diffusion processes and convection. Thus, low pressures in the container are needed for making the transport of the sublimed SiC powder effective, while avoiding too many collisions of the vapour SiC on its way to the seed crystal . The obtained growth rates with such a system is in the order of a few mm/h. Typical tempera¬ tures, temperature gradients and pressures are in the or- der of 2400°C for the source material, 10-30°C/cm and 5-50 millibar, respectively. The ambient is normally Ar. The advantage with this method is its simplicity. The disad¬ vantage with the method is the limited control of the sys¬ tem, the unsatisfactory crystalline quality and the low purity which largely is governed by the purity of the source material and which indeed may be improved by the choice of a purer source material . Due to an inevitable escape of Si from the quasi-closed container, the C/Si ra¬ tio of the vapourised source material cannot be kept con¬ stant during the entire growth. Thiε will affect the growth in a negative way and cause crystalline defects. In order to grow crystals of significant size for subsequent substrate production, the growth must also be interrupted from time to time in order to refill the container with new source material. These interrupts will also disturb the growing crystal. During growth the presence of the temperature gradient at the growth interface causes forma¬ tion of crystalline defects such as micropipes, disloca¬ tion and point defect agglomerates. Another technique used for the epitaxial growth of Silicon Carbide layers is the Chemical Vapour Deposition tech¬ nique, which in terms of purity and crystalline quality is far superior to that of the seeded sublimation growth. The gas needed for the growth is transported to the substrate by a carrier gas, which normally is hydrogen. The precur¬ sor gases used are in the SiC case normally silane and propane. The precursor gaεeε decompose or are cracked and the εilicon and carbon conεituents migrate on the growing crystal surface to find a proper lattice site. The tem- perature of the system iε normally kept belov; 1600°C. Es¬ sentially no temperature gradient is present in the growth front of the crystal. The advantage with the CVD process is the purity and the crystalline quality v/hich mainly is limited by the substrate quality. The disadvantage with the CVD technique is the low growth rates which rules out any poεεibility of growing crystals for substrate produc¬ tion by this technique or even thick high quality layers at a commercially interesting capacity. The typical growth rates of CVD grown SiC epitaxial layers are in the order of several μm/h at 1600°C. Recently another process, namely the High Temperature Chemical Vapour Deposition (HTCVD) process has been pre¬ sented (paper of High Temperature Chemical Vapour Deposi¬ tion released on Technical Digest of Int'l Conf. on SiC and Related Materials -ICSCRM-95-, Kyoto, Japan, 1995 and the US patent application No. 08/511 324) . This proceεs is technically a CVD process carried out at very high tem¬ perature where sublimation and etching of the seed crystal (substrate) and growing crystal or layer iε εignificant. The etching of the growing surface has shown to improve the crystalline quality and also due to the purity of the precursor gases the purity of the grown crystals are very high. The growth rate can be increased to the order of a few mm/h due to the increased surface mobility of the at- oms which thereby find their correct lattice sites faster. In the HTCVD process the temperatures are in the order of 1900°C-2500°C used. The advantage with the HTCVD process is the high purity, the high crystalline quality and also the high growth rate. The disadvantage with the technique is the difficulty to establish favourable conditions for growth in an artificial way by adding silicon and carbon precursor gases in a correct amount at all times, i.e. during the temperature increase to the growth temperature and during growth. If a too small amount of precursor gases are added, a too high degree of etching or sublima¬ tion may occur, which thereby may cause a graphitisation of the crystal surface which will cause crystalline de¬ fects or even totally prevent growth. If a too high amount is added the supersaturation may be too high for the sur- face mobility and the growth may be polycrystalline. The conditions must thus artificially be kept close to a ther- modynamical equilibrum, which may be very delicate to achieve. The solution to this problem iε given in a co¬ pending patent application filed by the applicant the very same day aε the preεent application. Thiε technique has been conεidered to form the state of the art while draft- ing the preambles of the appended independent claims, al¬ though the inventional technique defined below is in fact no type of CVD technique . Another problem is the transport of source material for the growth to the susceptor, which in the HTCVD-process carried out for growing SiC iε the tranεport of silane. The silane may decompose at an early stage and result in a total or partial plugging of the gas tube leading to the susceptor or a complete depletion of the gas which will disable growth. Furthermore, there is a risk of explosions when silane is used in high concentrations. SUMMARY OF THE INVENTION The object of the present invention is to advise a solu¬ tion to the latter problems discussed above by providing a method and a device making it possible to epitaxially grow objects, both layers and boules of SiC, a Group Ill-ni- tride or alloys thereof at a high growth rate while still obtaining a high crystalline quality of the object grown and solve said problems . This object is in accordance with the invention obtained by providing a method defined in the introduction with the steps of adding at least a part of said source material for said growth to the carrier gas flow upstream the sus¬ ceptor and carrying it by the carrier gas flov; to the sus¬ ceptor in one of a) a solid state and b) a liquid state for being brought to a vapour state in a container com¬ prising said suεceptor by said heating and carried in a vapour state to said substrate for said growth. In the SiC case it is possible to in this way avoid a premature de¬ composition of the silane in the tube leading to the growth chamber and/or a total depletion of the silane, by adding liquid or solid state source material to the car- rier gas flow in this way. This source material may for instance be Si, C, SiC, or combinations thereof, prefer¬ ably in a solid state as a powder. The most favoured pro¬ posals are to make these additions as Si and C (graphite powder) or as SiC powder. Since the melting temperature of Si is 1414°C, the Si will be much more efficiently intro¬ duced into the growth chamber without any premature reac¬ tions in the tube which could completely block the line as in the case when silane iε used as the precursor. Thanks to these additions the transport of the source ma¬ terial will be much more efficient than when silane is used as source material, since increasing the gas pressure of silane in the gas mixture fed to the susceptor too much for obtaining a high growth rate will cause silane to be transported through the susceptor without any cracking and growth at all. With respect to the seeded sublimation technique source material may in this way be added to the carrier gas so that crystals of unlimited length may be grown without interruption. According to another preferred embodiment of the invention at least a part of the source material iε present in a solid state in the container as the material grown and brought to a vapour state by said heating and carried in a vapour εtate by the carrier gaε flow to the εubstrate for said growth. The definition "as the material grown" is to be interpreted so that when for instance SiC is grown said part of the source material is SiC in a solid state. Thus, the inventional method is an improvement of the High Tem¬ perature Chemical Vapour Deposition technique making it to a hybrid of that technique and the seeded sublimation technique utilising the advantages of each of these tech¬ niques. Thankε to the fact that thiε type of source mate- rial is present in a solid state in the container a very good control of a broad parameter range is obtained, so that a high quality crystal may be grown at a high growth rate. The Si and C containing vapours created either by etching or by sublimation of the SiC will be brought to the sub¬ strate by the carrier gas or by the carrier gas in combi¬ nation with a thermal gradient. Conditions close to ther- modynamical equilibrium can thus be obtained at all times and throughout the whole growth cycle provided that there is at all times a significant amount of SiC present in the growth' chamber. No artificial means of creating a thermo- dynamical equilibrium are thus required during the tem¬ perature ramp to the growth temperature. This improvement will make it simple to grow SiC boules without any tem- perature gradient. It will be possible to benefit from the advantages of the seeded sublimation technique of obtain¬ ing high growth rates without being forced to accept the disadvantage of that technique asεociated with the uεe of the temperature gradient for obtaining the transport of said vapour state source material, since said carrier gas flow is used for this transport . The introduction of the carrier gas for the transport of the source material va¬ pour iε a key issue and in the present case it is super¬ fluous to add any precursor gases to the carrier gas. The growth will in the case of no addition of source material to the carrier gas flow upstream the container stop once the exposed surface of the SiC source material becomes too small to maintain aε εupersaturation. The carrier gaε tranεport together with a propoεed modification involves a number of advantages: The transport of the source material will be much more ef¬ ficient which means that the growth rates can be raised substantially in comparison to the seeded sublimation technique. For maintaining high growth rates, considerably smaller temperature gradients or even no temperature gra- dients at all needs to be applied, thus enabling a sig¬ nificantly improved crystalline quality. The vapour trans¬ port can be very easily controlled by increasing or de¬ creasing the flow of the carrier gas. The degree of super- saturation can be kept at a controllable level at all times. If the thermal gradient is made negative, i.e. the substrate is at. a higher temperature than the εource mate¬ rial, a controlled etching iε also possible. The negative thermal gradient will not cause a problem once growth is desired since the transport of the source material by a carrier gas is so much more efficient than a thermal gra¬ dient. Dopants may be easily added to the carrier gas in a manner similar to that of CVD. Since the gases pass through the container, much material will be lost and de- posited or transported to other parts of the container. These losses can, however, be assumed to be esεentially equal for both the εilicon and carbon containing vapourε which will simplify the maintenance of a constant C/Si ra¬ tio. In this embodiment the growth rate may simply be con- trolled by controlling the temperature to which the sus¬ ceptor walls are heated and the flow rate of the carrier gas flow. The definition "container" is to be interpreted as an object defining a room in connection with the sus¬ ceptor room, in which a temperature above the temperature level from which sublimation of the material growth starts to increase considerably prevails. Thus, a container may be the same as the susceptor or besides the susceptor also comprising a room directly upstream the susceptor room. It is emphaεiεed that the corresponding reasoning iε valid also for the cases of growing objects of other materials than SiC. It may in this way be ensured that never all solid state source material in the container will be consumed, but there will always be a buffer of solid state source mate¬ rial of the material grown present in the container, so that it will never be difficult to maintain a thermody- namical equilibrium in the system. If favourable thermody- na ical conditions can artificially be achieved at all times one may omit the SiC source material in said con- tainer and the system will be esεentially the εame as the HTCVD in the caseε when the source material is added as a solid or a liquid to said container. The corresponding characteristics and advantages thereof are found in a device for epitaxially growing objects ac¬ cording to the invention and defined in the appended de¬ vice claims. Further preferred featureε and advantages of the device and method according to the invention will appear from the following description and the other dependent claimε. BRIEF DESCRIPTION OF THE DRAWINGS With reference to the appended drawings below follows a specific deεcription of preferred embodimentε of the in¬ vention cited aε exampleε. In the drawings : Fig. 1 is a longitudinal croεε-εection view of a device according to a first embodiment of the invention, Fig. 2 is a perspective view of the susceptor used in the device of Fig. 1 according to a first preferred embodiment adapted for epitaxially growing layers, parts of the εuεceptor walls being broken away so as to illustrate the interior of the susceptor, Fig. 3 is a view similar to Fig. 2 of a susceptor accord¬ ing to a second preferred embodiment adapted for growing boules by the same inventional method as used for the growth in the embodiment according to Figs. 1 and 2, and Fig. 4 is a view similar to Fig. 2 and 3 of a susceptor according to a third preferred embodiment adapted to enable the growth of boules of nearly unlimited lengths. DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS OF THE INVENTION Fig 1 shows schematically a device according to a pre¬ ferred embodiment of the invention for epitaxially growing SiC by a method according to a preferred embodiment of the invention being a hybrid of seeded sublimation and High Temperature Chemical Vapour Deposition on a SiC-substrate in a simplified manner, and it is obvious that the device in question also comprises other means, such as pumps, but conventional equipment having nothing to do with the in¬ vention has been omitted for the sake of clearnesε and concentration to the inventional characteriεticε . The de¬ vice comprises a casing 1 constituted by a tube 2 of quartz extending substantially vertically and two opposite end flanges 3 and 4. The end flange 4 is preferably remov¬ able so as to get access to the interior of the tube 2. A conduit 5 for supplying a stream of at least a carrier gas intended for the transport of source material for said growth to the substrate inside a susceptor is introduced through the lower end flange 3. The composition and task of this gas mixture containing at least a carrier gas will be diεcussed more in detail further on. The conduit 5 iε connected to separate conduits 20-23 leading to sources for different additions of source material for said growth to said carrier gas and these conduits are provided with flow regulating means not shown for regulating the content of each component in said gaε mixture as desired. Such flow regulating means will also be there for the carrier gas flow. The conduits 20-23 are in Fig. 1 for the sake of clearness illustrated as emerging into the conduit 5 close to the casing 1, but in practise they will probably be at a greater distance therefrom. Furthermore, the device comprises a funnel 6 for concen- trating the gaε flow from the conduit 5 into a εuεceptor 7 (see also Fig 2) . The susceptor 7 shown in Figs 1 and 2 is adapted for epitaxially growing layers of SiC. The suεcep- tor iε substantially cylindrical with circumferential walls 8 of a subεtantially uniform thickness. The walls are made of graphite, but they are internally coated by a layer of SiC 9 or alternatively covered by a cylindrical plate made of SiC. The space surrounding the suεceptor is enclosed and filled by graphite foam 10 for thermal insu¬ lation for protecting the surrounding quartz tube 2. Rf- field radiating means 11 in the form of a Rf-coil sur¬ rounds the tube 2 along the longitudinal extension of the susceptor 7. This heating means 11 is arranged to radiate a Rf-field uniformly heating the walls 8 of the susceptor and thereby the gas mixture introduced into the susceptor. The susceptor 7 comprises a lid 12 of the same material as the rest of the susceptor, on the lower side of which a SiC substrate 13 is arranged and which may be removed from the rest of the susceptor so as to remove the subεtrate after a layer haε been grown thereon. The lid 12 iε pro¬ vided with peripheral gas outlet holes 14, εo that a pref¬ erable laminar gas flow will enter the susceptor room 18 through the lower inlet 15 and flow close to the substrate and leave the susceptor through the upper outlets 14 and then the device through a conduit 16 connected to a pump not shown. The temperature inside the susceptor 7 may be checked py- ro etrically through looking into the susceptor 7 through a window indicated at 17. In the bottom of the susceptor at least a part of the source material for the growth is located in the form of a SiC pow¬ der with high purity. The funnel 6 has circumferential open¬ ings 25 for the passage of the flow of said gas mixture into the susceptor room 18. The function of the device is as follows: The heating means 11 will heat the susceptor walls 8 and by that the susceptor room 18 and the subεtrate 13 and the SiC powder 24 contained therein to a temperature above the tem¬ perature level from which sublimation of the SiC starts to increase considerably, in the present case to a temperature of about 2300°C. This means that SiC powder will sublime and so will the SiC of the substrate. A gas flow containing a carrier gas, which may be H2, He or Ar, is fed to the suscep¬ tor room 18 through the conduit 5 and the funnel 6. The defi¬ nition of carrier gas is a gas not actively participating in the growth, i.e. not having components which are grown into said object of the substrate. He and Ar have the advantage with respect to H2 that they do not react with reactive ele¬ ments of cracked precursor gases, such as propane, and He is particularly well suited to be used for the growth owing to the comparatively high thermal conductivity tnereof compared with Ar. The carrier gas flow will carry SiC powder sublimed and being present in the vapour state in the susceptor room 18 towards the subεtrate 13, so that no temperature gradient is necessary for the transport of the SiC vapour to the sub¬ strate. The Si and C escape with this syste- will be large, however, it may be kept at a reasonable level since atmos¬ pheric pressure operation is possible. The SiC vapour carried in this way to the substrate will form an atmosphere around the substrate having a certain "SiC gas presεure", which will counteract sublimation of SiC from the substrate and etching thereof. In this way it is ensured at all times that a super- saturation is maintained and that no etching of the sub¬ strate occurs, so that a SiC crystal of high quality may be grown on the substrate at high growth rates. It has turned out that it will be no problem to grow an object of 0,5 mm/hrs at 2300°C in this way and probably much higher growth rates may be envisaged. Would this so called SiC atmosphere not be provided around the substrate, the following may hap¬ pen: all SiC begins to sublime at a temperature being high enough, which would mean that SiC components from the sub¬ strate will leave the substrate at a higher rate than the carbon, εo that a film of graphite would be formed on the substrate. In the Chemical Vapour Deposition case Si- and C-containing precursor gases must be supplied at a correct ratio being very delicate to control in the beginning of said growth. If this happens the result of the growth may be very bad or the growth will in the worst case be impossible. The parameters needed for the control of the growth rate may in the method according to the invention be easily controlled within a vaεt parameter range, so that an adequate control of the relevant parameters is always ensured. There are two main parameters for controlling the growth rate, namely the tem¬ perature inside the suεceptor and the carrier gas flow rate. The temperature inside the susceptor may be controlled by controlling the heating means 11 and the growth rate and the quality of the crystal grown may be raised with the tempera¬ ture. However, higher temperatures also involve a risk of impurities coming out of the walls of the susceptor. The carrier gas flow rate will control the flow of vapourized SiC to the atmosphere around the εubεtrate . The growth rate may by controlling the carrier gas flow be very effectively var¬ ied, and the device comprises for this sake means 26 sche- matically indicated for allowing regulation of the flow rate of the carrier gas flow. A higher carrier gas flow rate will mean a higher growth rate, but too high growth rates may in- volve a risk of a lowered quality of the material grown. The substrate should not have a higher temperature than the SiC powder, since this would mean a temperature gradi¬ ent normally resulting in a transport of SiC to the colder region, i.e. towards the SiC powder. However, in this case the carrier gas flow is totally dominating and forces "the SiC-vapour" in the right direction, so that a positive growth always takes place regardless of a possible nega¬ tive temperature gradient in the room, which easily may be the case due to the vertical arrangement of the susceptor. Furthermore, the ratio of Si- and C-containing molecules can be kept constant in the susceptor room 18 by additions of silane and propane into the carrier gaε through the conduits 22 and 23. However, the silane may partially be decomposed or cracked on its way to the casing 1, which will lead to an at least partial plugging of the conduits in question and a degraded and less reliable function of the entire device. The risk of such cracking is higher at low gas flow rates. This problem is however solved by add¬ ing Si or SiC as a powder to the carrier gas flow through the conduit 20. In this way also carbon or graphite could be added as a powder if this should prove to be necessary. Since Si melts at such a high temperature as about 1400°C there will be no risk of plugging of the conduits in ques¬ tion. This means that Si may be fed to the susceptor room 18 in higher concentrationε in the form of the Si powder than in the form of silane. Furthermore, the risk of ex¬ plosions are also eliminated. All combinations of adding components to the carrier gas flow may be utilised, but it would mostly be preferred to add a pov/der, eventually a liquid, of a component, such as an Si pov/der to the car¬ rier gas flow through the conduit 20 or 21. It would also be possible to provide means adapted to analyse the gases leaving the device through the conduit 16 so as to regu¬ late said additions depending on the result of this ana- lyse. This way of controlling the ratio relevant for the growth, in the SiC case the C/Si ratio, may also be suc¬ cessfully used when objects are grown by uεe of the Chemi¬ cal Vapour Deposition technique, i.e. when no source mate- rial in the form of the material to be grown is present in the susceptor room. Thanks to the method described above the initial stage of the growth being of particular importance for the quality of the layers grown closely thereafter may be adequately controlled, and very high growth rates are after that achievable - well in the order of mm/h. Thanks to the ef¬ ficient transport obtained, a high growth rate may be ob¬ tained at these high temperatures. Thanks to the purity of the Si powder or silane and graphite or propane fed to the susceptor room by the carrier gas the introduction of un¬ wanted compensating acceptors into the layers grown is dramatically reduced with respect to the epitaxial growth of such layers by CVD at normal temperatures resulting in a significant prolongation of the minority carrier life¬ time in the crystals grown. This is a vital improvement for the production of high-power bipolar devices. It will in this way be possible to grow crystalε at the same or higher growth rates than when the seeded sublimation tech- nique is used, but with much higher crystalline quality and purity. Fig 3 εhowε a εusceptor 7 ' according to a εecond preferred embodiment of the invention, which is adapted for growing boules 19 of SiC on a substrate in the form of a seed crystal indicated at 13 ' . This εusceptor iε intended to be incorporated in a device according to Fig l in the same way as the susceptor according to Fig 2. The suεceptor ac¬ cording to Fig 3 only differs from that according to Fig 2 by the arrangement of gas outlet holes 14 ' at the bottom of the suεceptor. Accordingly, the gaε flov,- v/ill aε indi- cated reach the region of the SiC boules grown where the source material will be deposited and the resulting compo¬ nents thereof will be diverted back and leave the suεcep¬ tor through the holeε 14 ' . SiC bouleε with a high crystalline quality may in this way be epitaxially grown at a sufficiently high growth rate thanks to the high temperature used. As already mentioned there will be a thermodynamic equilibrium in the susceptor room 18' and the C/Si ratio therein may easily be held constant by any appropriate addition as discussed above. This means that the degree of supersaturation which influ¬ ences both the growth rate and the formation of micropipes can be varied without any thermal gradient . Fig. 4 shows a susceptor according to a third preferred embodiment of the invention. This susceptor has only one different principle feature than the other two embodi¬ ments, namely the lid 12" and by that the crystal 19" grown may be constantly raised, preferably by rotation thereof as in the Czochralski growth. Without this possi¬ bility it would be necessary to heat a much longer εuscep¬ tor room for growing long objects. And the great distance between the solid source material and the crystal would also be harmful with respect to depoεitionε on the suεcep- tor wall before reaching the crystal. In thiε way it may be poεsible to use the method according to the invention to grow boules of SiC continuously with the same quality throughout the whole growth to an unlimited length. In this embodiment source material for said growth is added to the carrier gas flow upstream the susceptor 7 and car¬ ried by the carrier gas flow to the susceptor in a solid or liquid state for ensuring a continuouε feeding of source material for said growth. Such material may be pow- der of Si, C and/or SiC. A disadvantage of the method according to the invention may be the larger material losseε that may be encountered when compared to seeded sublimation growth, however, thanks to the carrier gas transport the presεure may be kept at atmospheric pressure which thereby will limit these losses to some extent. The losεeε will essentially be governed by the gas velocity. As long aε these losses do not cause a degraded function of the system by for in¬ stance blocking filters or tubes on the downstream side this is a minor problem since a fresh supply of new source material can at all times be maintained. The invention is of course not in any way restricted to the preferred embodiments of the device and method de- scribed above, but several possibilities to modifications thereof would be apparent for a man skilled in the art without departing from the basic idea of the invention. As already mentioned the invention is alεo applicable to the growth of a group III-nitride, an alloy of group III- nitrides or an alloy of SiC and one or more group Ill-ni- trideε, for which the corresponding positive result may be expected. The definition "object" in the claims is made for includ¬ ing the epitaxial growth of all typeε of cryεtalε, such as layers of different thicknesses as well as thick boules. All definitions concerning the material of course also in- elude inevitable impurities as well as intentional doping. It would of course be possible but most hardly desired to add a part of the source material for the growth into the carrier gas flow in a liquid or vapour state inεtead of a solid state for bringing it to a vapour state (in the liq¬ uid εtate caεe) in the susceptor room. The choice of car- rier gaε is not in any way restricted to the two ones men¬ tioned above. It will be possible to provide a source material as the material grown in the susceptor in another state than as a powder, such as lumps, or as a combination of powder and lumps. As already mentioned this may also be obtained by providing a suεceptor or container made of the material grown or internally coated thereby. It would alεo be possible to provide the source material last mentioned in another part of the susceptor than at the bottom thereof, and other than vertical extensions of the susceptor will be possible. The crystal may in an alternative embodiment of the inven¬ tion be moved in the direction out of the susceptor room in another way than by screwing, for instance by a dis¬ placement caused by pulling. The definition "by heating in εaid container brought to a vapour state" in the claims also comprises the case in which a susceptor room is heated so that a container room upstream thereof is indirectly heated to εuch a tempera- ture that the εolid state source material is brought to a vapour state in the container outside the suεceptor. The definition "component" is to be understood aε a part of the material grown and may not be the εame as the mate- rial grown.

Claims: Claims 1. A method for epitaxially growing objects (19) of one of a) SiC, b) a Group Ill-nitride and c) alloys thereof on a substrate (13) received in a susceptor (7) having circum¬ ferential walls (8) , in which these walls and by that the substrate and a source material for the growth are heated above a temperature level from which sublimation of the material grown starts to increase considerably, and a car¬ rier gas flow is fed into the susceptor towards the sub¬ strate for carrying said source material to the substrate for said growth, characterized in that at least a part of said source material for εaid growth iε added to the car¬ rier gas flow upstream the susceptor (7) and carried by the carrier gas flow to the susceptor in one of a) a solid state and b) a liquid state for being brought to a vapour state in a container comprising said susceptor by said heating and carried in a vapour state to said substrate for said growth. 2. A method according to claim 1 , characterized in that said source material part added to the carrier gas flow contains at leaεt one component of the material to be grown. 3. A method according to any of claims 1 or 2, character¬ ized in that at least a part of said source material for said growth is added to the carrier gaε flow upstream the susceptor (7) and carried by the carrier gas flow to the εusceptor in a vapour state. 4. A method according to any of claims 1-3, characterized in that at least one vapour state part of said source ma¬ terial for said growth is added to the carrier gas flow upstream the susceptor (7) and cracked by the heating in- side the susceptor for forming a component of the material grown. 5. A method according to any of claims 1-4, characterized in that SiC iε the material grown. 6. A method according to claim 5, characterized in that one of a) Si, b) C, c) SiC, d) Si and C, e) Si and SiC, f) C and SiC and g) SiC, C and Si are added as powder to said carrier gas flow. 7. A method according to claim 4, characterized in that said vapour state part is one of a) silane, b) propane and c) silane and propane. 8. A method according to any of claims 1-7 , characterized in that at least a part (24) of the source material is present in a solid state in the container as the material grown and brought to a vapour state by said heating and carried in a vapour state by the carrier gas flow to the substrate (13) for said growth. 9. A method according to claim 8, characterized in that said susceptor (7) constitutes said container and said solid state source material part is present in the εuscep¬ tor. 10. A method according to claim 8 or 9, characterized in that said solid state source material part iε provided in said container by one of a) making the container of the material grown, b) internally coating the container by the material grown and c) placing the material grown in the container. 11. A method according to claim 10, characterized in that said solid state part (24) of the source material iε pre- sent in the container as one of a) a powder, b) lumps and c) a powder and lumps. 12. A method according to claim 5, characterized in that said susceptor walls (8) are heated to a temperature above 1900°C. 13. A method according to any of claims 1-12, character¬ ized in that the pressure inside the susceptor is kept at substantially atmospheric pressure. 14. A device for epitaxially growing objects of one of a) SiC, b) a Group Ill-nitride and c) alloys thereof on a substrate (13) comprising a susceptor (7) having circum- ferential walls (8) surrounding a room (18) for receiving the substrate, means (11) for heating said circumferential walls and by that the substrate and a source material for the growth above a temperature level from which sublima¬ tion of the material grown starts to increase considerably and means (5) for feeding a carrier gas flow into the suε¬ ceptor (7) towards the subεtrate for carrying said source material to the substrate (13) for εaid growth, character¬ ized in that it also comprises a container comprising said susceptor (7) and a member (20, 21) for adding at least a part of said source material for said growth to the car¬ rier gas flow upstream the susceptor (7) , that said feed¬ ing means (5) is arranged to bring the carrier gas flow to carry thiε added source material to the susceptor in one of a) a solid state and b) a liquid state, and that the heating means is arranged to bring this added source mate¬ rial to a vapour state in said container by heating for carrying this added source material in a vapour state by said carrier gas flow to said substrate for εaid growth. 15. A device according to claim 14, characterized in that it compriεeε a member (20, 21) for adding at leaεt a part of said source material for said growth to the carrier gas flow upstream the container (7) and that said feeding means (5) is arranged to bring the carrier gaε flow to carry thiε added source material to the εuεceptor in a va- pour state. 16. A device according to claim 14 or 15, characterized in that said member (20, 21) is arranged to add said source material part to the carrier gas flow in the form of at least one component of the material to be grown. 17. A device according to any of claims 14-16, character¬ ized in that it comprises a member (22, 23) for adding at least one vapour state part of said source material for said growth to the carrier gas flow upstream the susceptor for cracking thereof by the heating inside the susceptor for forming a component of the material grown. 18. A device according to any of claims 14-17, character- ized in that it is adapted for the growth of SiC. 19. A device according to claim 18, characterized in that said member (20, 21) is arranged to add one of a) Si, b) C, c) SiC, d) Si and C, e) Si and SiC, f) C and SiC and g) SiC, C and Si as a powder to said carrier gas flow. 20. A device according to any of claimε 14 - 19, charac¬ terized in that εaid providing meanε iε adapted to provide at least a part (24) of the source material in a solid state in the container as the material grown, and that said heating means (11) is adapted to heat this solid state source material so as to bring it to a vapour state for being carried by said carrier gas flow to the sub¬ strate (13) for said growth. 21. A device according to claim 20, characterized in that said susceptor (7) constitutes said container, and that said providing means is adapted to provide said solid state source material part in the susceptor. 22. A device according to claim 20 or 21, characterized in that said providing means iε adapted to provide said solid state part of the source material in said container by one of a) the container is made of the material grown, b) the container is internally coated by the material grown and c) providing the material grown is provided in the container. 23. A device according to claim 22, characterized in that said providing means is arranged to provide said solid state part (24) of the source material in the container as one of a) a powder, b) lumps and c) a powder and lumps. 24. A device according to claim 18, characterized in that said heating means (11) iε arranged to heat the susceptor walls to a temperature above 1900°C. 25. A device according to claim 24, characterized in that said heating means (11) is arranged to heat said susceptor walls to a temperature between 2000°C and 2500°C. 26. A device according to any of claims 14-25, character¬ ized in that it comprises means for maintaining a substan¬ tially atmospheric pressure inside the susceptor. 27. A device according to any of claimε 14-26, character¬ ized in that the feeding means (5) is arranged to feed one of a) noble gas, b) H2 and c) noble gas and K2 as carrier gas to the susceptor. 28. A device according to claim 27, characterized in that the feeding means (5) is arranged to feed Helium as carrier gas to the susceptor. 29. A device according to any of claims 1-28, characterized in that it comprises means (26) for regulating the flow rate of the carrier gas flow.

Inventors: HALLIN CHRISTER, JANZEN ERIK, KORDINA OLLE, TUOMINEN MARKO, VEHANEN ASKO, YAKIMOVA ROSITZA, HALLIN, CHRISTER, JANZEN, ERIK, KORDINA, OLLE, TUOMINEN, MARKO, VEHANEN, ASKO, YAKIMOVA, ROSITZA
Applicants: ABB RESEARCH LTD, HALLIN CHRISTER, JANZEN ERIK, KORDINA OLLE, OKMETIC LTD, TUOMINEN MARKO, VEHANEN ASKO, YAKIMOVA ROSITZA, ABB RESEARCH LTD., HALLIN, CHRISTER, JANZEN, ERIK, KORDINA, OLLE, OKMETIC LTD., TUOMINEN, MARKO, VEHANEN, ASKO, YAKIMOVA, ROSITZA
Application year: 1996
Main classification: C30B29
IPC codes: C30B23, C30B29