DIODE LASER-PUMPED AND LINEAR CAVITY SYSTEMS FOR GAS DETECTION VIA INTRACAVITY LASER SPECTROSCOPY

Abstract: Contaminants are detected at concentrations below 1 part-per-million and extending to a level approaching 1 part-per-trillion by using intracavity laser spectroscopy (ILS) techniques. An optically-pumped solid-state (ILS laser) (500) is employed as a detector. The ILS laser (500) comprises an ion-doped crystal (507) in a laser cavity (902) optically pumped by a pumping source (100). A gas sample containing gaseous contaminant species is placed inside the laser cavity (902) on one side of crystal (507). The ILS laser output signal is detected and analyzed to identify the gaseous species (via its spectral signature). Gaseous species concentration can also be determined from the spectral signature. In one embodiment, the ILS laser (500) comprises an ion-doped crystal medium (507) which is pumped by a semiconductor diode laser. In another embodiment, the ILS laser (500) comprises an ion-doped crystal medium (507) in a linear cavity (902).

Description: DIODE LASER-PUMPED AND LINEAR CAVITY SYSTEMS FOR GAS DETECTION VI INTRACAVITY LASER SPECTROSCOPY TECHNICAL FIELD This invention relates, generally, to the detection of contaminants in gases, and more particularly, to the high seπsiuvity detecuon of gaseous molecules, atoms, radicals, and or ions bv laser techniques generallv termed lntracavity laser spectroscopy (ILS) BACKGROUND OF THE INVENTION In the preparauon of high quality semiconductor matenal (e g . silicon films) for use in the microelec¬ tronics industry, it is well known that contaminants must be controlled Failure to control contaminants can re¬ sult m the loss of significant resources as the resultant products are tvpicallv not useful for their intended pur¬ poses Generally, the starting mateπals in the fabrication of sihcon films consist essentially of gases, tvpicallv denoted either "bulk" (e.g , nitrogen or argon) or "specialty" (e g , hydrogen chlonde. hydrogen bromide, boron tnchloπde) The successful operation of a fabπcation facility designed to prepare semiconductor matenals de¬ pends directly on the puπty ofthe starting gases However, many molecular, atomic, radical, and ionic species are present in the bulk and specialty gases used in the processing of semiconductor matenals that can be viewed as "contaminants " Such contaminants can degrade either the quality ofthe fabncated semiconductor mateπal or the efficiency ofthe processing The first step in controlling and/or eliminating these contaminants is their detec on in the bulk and specialty gases used as starting mateπals However, conventional methods for detection are generallv inadequate This is due. in large part, to the situauon created by seemingly ever increasing competitive industry standards which have developed. Specifically, as the size of πucroelectromc devices has decreased while performance specifications have been intensified, the requirements for gas puπtv (1 e . absence of microcontamination) has increased Against this backdrop, it will kelv be clear that several measurement cπtena are important to detector effectiveness (1) absolute detection sensitivity usually stated as parts-per-total number of gas molecules in the sample (e g , parts-per-milhon or number of contaminant molecules per 10^ background molecules), (2) species selectivity or the capability to measure the concentration of one species m the presence of other species, (3) ra¬ pidity of measurements to obtain a desired signal to noise ratio, (4) capability of momtonng contaminants in both non-reacuve and reacϋve gases, and (5) hneaπty and dynamic range of gas concentrauons that can be measured The current state-of-the-art devices for contaminant detection (e g , water) encompass a vanety of measurement techmques For example, current state-of-the-art devices for water vapor detection utilize conduc¬ tivity and electrochemical, atmospheπc pressure ionization mass spectroscopy as well as direct absoφtion spec¬ troscopy measurement techmques Each of these methods, however fails to adequateK address these require¬ ments In the context of the present invenuon, laser technology, specificallv intracavitv laser spectroscopy (ILS). is disclosed as being used as a detector (sensor) to detect gaseous species (contaminants) at verv high sensitivity levels In connection with this application, laser technology offers distinct advantages to gaseous spe¬ cies (contaminant) detection over known methods and. particularly, to water vapor detection In conventional applications of lasers to the detection of gaseous species (contaminants), laser produced radiation is used to excite the gas sample external to the laser in order to produce a secondarv signal (e g . ioni¬ zation or fluorescence) Altematively. the intensity of the laser after it passes through a gas sample, normalized to its initial intensity, can be measured (i e . absorption) Direct absorption spectroscopy generallv relates to the passing of light through the sample from an extemal source and measuπng the reduction in light intensity caused by molecular, atomic, radical, and or ionic absorption in the sample Detection sensitivity, however, de- pends directlv on the subtraction of two large numbers (light intensm from the extemal source before it passes through the sample and its intensity after it exits the sample) This subtraction of two large numbers limits the detection sensitivity to the extent that direct absoφtion is generallv considered a low sensitivity methodology Some twenty years ago, another detection methodology, intracavitv laser spectroscopy. was first ex¬ plored in which the laser itself is used as a detector, see, e g , G Atkinson. A Laufer M Kurylo, "Detection of Free Radicals by an Intracavitv Dye Laser Technique." 59 Joumal Of Chemical Phvsics. Julv 1. 1973 Intracavity laser spectroscopy (ILS) combines the advantages of conventional absoφtion spectroscopy with the high detection sensitivity normally associated with other laser techniques such as laser-induced fluores¬ cence (LIF) and multiphoton ionization (MPl) spectroscopy ILS is based on the intracavitv losses associated with absoφtion in gaseous species (e g . atoms, molecules, radicals, or ions) found within the optical resonator cavity of a multimode. homogeneously broadened laser These intracavity absoφtion losses compete via the normal mode dynamics of a multimode laser with the gain generated in the laser medium Traditionally. ILS re¬ search has been dominated bv the use of dve lasers because their multimode properties fulfill the conditions re¬ quired for effective mode competition and their wide tunabi ty provides spectral access to manv different gase- ous species In particular, measurements at visible wavelengths have been conducted usmg dye lasers having lin¬ ear two-mirror cavities: see. e.g , VM Baev, J Eschner. J Sierks. A Weiler. and P E Toschek. "Regular dy¬ namics of a multimode dye laser", Optics Communications, 94 (1992) 436-444. and J Sierks, V M Baev, and P.E Toschek, "Enhancement of the sensitivity of a multimode dye laser to intracavity absoφtion". Optics Com- munications. 96 (1993) 81-86 The liquid dye laser, however, is not compatible with many practical applications given its liquid state and the need to maintain physical and optical stability Dye lasers also operate pnmanly in the visible spectral region The absoφtion strength of many gaseous species, although definitely detectable by ILS. are not as strong in the visible as compared to lower energies (e g , in the near infrared) Higher detection sensitivm . therefore, is found when absoφtion transitions in the infrared are utilized Some ILS expenments have been performed with multimode. tunable solid-state laser media such as color centers and Ti Sapphire, see. e g , D Gilmore, P Cwjin. G Atkinson. "Intracavitv Absoφtion Spectros¬ copy With a Titanium Sapphire Laser." Optics Communications 77 (1990) 385-89 ILS has also been successfully used to detect both stable and transient species under expeπmental con- ditions where the need for high detection sensitivity had previousiv excluded absoφtion spectroscopy as a method of choice For example. ILS has been utilized to examine gaseous samples in environments such as cryo- genically cooled chambers, plasma discharges, photolvtic and pyrolytic decompositions, and supersonic jet ex¬ pansions ILS has been further used to obtain quantitative absoφtion information (e g . line strengths and colli- sional broadening coefficients) through the analysis of absoφtion neshapes Some of these are descπbed in G Atkinson. "Intracavity Laser Spectroscopy," SPIE Conf , Soc Opt Eng 1637 (1992) Pπor art methods of performing ILS. however, while suitable for use in laboratorv settings are unac¬ ceptable for commercial settings The constraints of commercial reality essentially dictate that such a detector be convemently sized, relatively inexpensive, and reliable Laboratory models fail to fully meet these requirements A laboratory demonstration of the feasibility of using ILS techniques for detecting small quantities of water vapor in a mtrogen atmosphere with a Cr 4* YAG laser is descnbed in D Gilmore. P Cvijm. G Atkinson. "Intracavity Laser Spectroscopy in the 1 38-1 55 μm Spectral Region Using a Multimode Cr 4τ YAG Laser." Op¬ tics Communications 103 (1993) 370-74 The expeπmental apparatus utilized was satisfactory for demonstration of operational charactenstics. but undesirable for implementation in a commercial application as contemplated by the present invention The availability of diode-pumped solid state lasers for use in ELS has been noted in the literature, how¬ ever, an enabling disclosure of an all-solid state diode-pumped intracavity spectrometer has yet to be disclosed in pπor art, see, e g , Gilmore et al (1990), supra, G H Atkinson (1992), supra, and A Kachanov. A Charvat, and F Stoeckel, "Intracavity laser spectroscopy with vibronic solid state lasers I Spectro-temporal transient be¬ havior of a Ti Sapphire laser", Joumal ofthe Optical Society of Ameπca B. 11 (1994) 2412-2421 Thus what is needed is a user friendly. 1 e . comparatively simple, detection system, having the advan¬ tages of direct absoφϋon techniques but with dramatically increased detection sensitivities, capable of detecting gaseous species in reactive and non-reactive samples at a commerciallv viable cost SUMMARY OF THE INVENTION In accordance with vaπous aspects of the present invention, contaminants are detected optically at con- centrations below 1 part-per-million (ppm) and extending to a level approaching 1 part-per-tnllion (ppt) by us¬ ing ILS techniques. A solid-state laser compnsing an optical resonator cavity with an ion-doped crystal medium contained therein serves as the detector A gas sample containing gaseous contaminant species, for example, water vapor, is placed inside the optical resonator cavity of the ion-doped laser (between reflective surfaces or mirrors) and on one side ofthe active medium A vaπety of ion-doped laser media including TπATb 3τ YLF and Tm 3+ YAG are descπbed here, but other ion-doped crystals having multiple longitudinal and transverse cavity modes can be used as well In separate embodiments of the present invention, solid-state laser may compnse a diode laser-pumped solid-state laser and the laser cavity may compπse a linear cavm The gas detection system preferably compnses a pumping laser used to provide the optical excitement required to operate the ILS laser, a multimode ILS laser operated over the wavelength region in which the spe- cies of interest absorb, a gas sample placed within the optical resonator cavity of the ILS laser (either by employ¬ ing a gas sample cell located withm the optical resonator cavity or by filling the enure intracavity optical region with the gas sample), a wavelength dispersive spectrometer capable of spectrally resolving the output of the ILS laser, a detector capable of measuπng the wavelength-resolved intensity of the ILS laser output, and an elec¬ tronic circuit which can read the signal from the detector and convert it into electronic signal that can be proc- essed by a computer or other digital electronics The gas detection system may also include a modulating device designed to peπodically interrupt the intensity ofthe pumping laser beam and the output from the ILS laser A method for detecting the presence of gaseous species in a gas sample is also disclosed The method compnses the steps of (a) directing the output beam of a diode laser pump laser to an ion-doped crystal contained within a laser cavity, thereby producing an output beam from the ion-doped crystal hich passes through the gas sample which is contained in the laser cavity pπor to exiting the laser cavity, and (b) directing the output beam ofthe ion-doped crystal after exiting the laser cavity to a detector assembly for determimng the presence and/or concentration of gaseous species in the gas sample In a separate embodiment of the present invention, the method for detection of gaseous species involves directing the output beam of a pumping source to a gain medium (e g , an ion-doped crystal) contained within a linear laser cavity The pumping source employed may compπse. e.g . a semiconductor laser diode, an ion-doped αystal laser (e.g., Cr 4+ . YAG), a gas laser, flashlamps. or other suitable forms of optical pumping used to provide the optical excitement required to operate the ILS laser BRIEF DESCRIPTION OF THE DRAWINGS Preferred exemplary embodiments of the present invention will be hereinafter descnbed in conjunction with the appended drawing figures, wherein like designations denote like elements The drawings referred to in this descnption should be understood as not being drawn to scale except if specifically noted FIGS 1 A and IB are schematic block diagrams of a contaminant detector system in accordance with the present invention, FIG IA shows the basic configuration, while FIG IB shows that configuration as embod¬ ied in the prefeπed embodiment shown in FIG 2, FIG 2 is a more detailed schematic perspective view of a prefeπed embodiment of a contaminant detec- tor system in accordance with the present invention. FIGS 3A-3C includes schematic representations of simple laser devices and accompanying graphical spectral outputs (intensity versus wavelength) obtainable from such devices. FIG 4 is a schematic perspective view of an ILS chamber including the chamber components depicted in FIG 2. some of the components shown in partially broken awav fashion FIG 5 is a perspective view of an exemplary ILS laser crystal holder and heat sink useful in connection with the contaminant detector system shown in FIG 2. FIGS 6 and 7 are schematic representations of an altemativ e embodiment of the ILS laser of the pres¬ ent invention wherein the laser cavity is a linear laser cavity formed between two minors. FIG 8, on coordinates of laser intensity (in arbitrary umts) and wavelength (in nanometers), is a graph showing an exemplary water absoφtion spectmm over the wavelengths of 1450 to 1455 nanometers (nm), and FIG 9 is a listing of some ion-doped crystals that can be excited using a semiconductor diode laser and their respective tuning range as well as the near infrared spectral absoφtion regions of some gaseous species in the range of 1 to 3 micrometers in wavelength DESCRIPTION OF THE PREFERRED EMBODIMENTS Reference is now made in detail to a specific embodiment of the present invention, which illustrates the best mode presently contemplated by the inventors for practicing the invention Alternative embodiments are also bπefly descπbed as applicable As previously bπefly noted, the subject matter of the present invention is particularly well suited for use in connection with the manufacture of semiconductor components, and thus, a preferred exemplary embodiment of the present invention will be descπbed in that context It should be recognized, however, that such descnption is not intended as a limitation on the use or applicability of the subject invention, but rather is set forth to merely fully descnbe a prefeπed exemplary embodiment thereof In this regard, the present invention is particularly suited for detection of contaminants Contaminants as used herein refer to molecular, atomic, radical, and ionic species such as may be present in gaseous mateπals, such as in the gaseous mateπals which are used m the fabπcation of silicon films, 1 e . inlet lines Altematively, the term contaminant may also refer to the gaseous mateπal itself, such as. for example, when the detector of the present invention is used to determine if a line (e g , HCl line) has been sufficiently purged of the gaseous mate¬ nal In accordance with a preferred embodiment of the present invention and with reference to FIG 1 A. a gas (contaminant) detector system 10 compnses a pumping laser system A. an ILS laser and associated chamber B, a spectrometer C, and a detector with associated electronics (e g , computer, digital electronics, etc ) D More particularly, and with reference to FIGS IB and 2, pumping laser system A compnses a pumping laser 100, a beam shaping optics assembly 200 and a beam modulation assembly 300. laser and chamber B suitably com¬ pnses a chamber assembly 400 and an ILS laser 500, spectrometer C suitably compnses a spectrometer assembly 600, and detector D suitably compnses a detector assembly 700 and a computer system 800 As will be descnbed herein, gas detector system 10 advantageously detects gaseous species (contaminants) which are contained in a gas sample In general, pumping laser dπver system A pumps ILS laser 500, preferably at or near (but above) the threshold level such that a laser beam passes through the gas sample thereby enabling the spectmm of the gas sample to be obtained This spectrum is detected through use of detector/computer svstem D which, upon ma¬ nipulation, enables the reliable and accurate determination of the presence and concentration at high sensitivity levels of gaseous species (contaminants) which may be contained within the gas sample With reference to FIGS 3A-3C. the general pπnciples of intracavity laser spectroscopy (ILS) are illus¬ tratively shown In its simplest terms, a laser can be descπbed as containing a gam medium, in which optical gain is produced, and a resonator, compπsed of optical elements such as minors Optical losses may appear in both the medium and the optical elements compnsmg the laser cavitv (e g . the resonator) With reference to FIG 3A. a laser device in its simplest form can be schematically illustrated as including a gam medium IA around which respective mirrors 2A and 3A are placed Minors 2A and 3A are typicalk coated to have high re¬ flectivity surfaces over a broad spectral range For example, the minor coating on minor 2A mav be totally re¬ flective, while the minor coating on minor 3A may be partially reflective thereby permitting some light to es¬ cape from the laser cavity The spatial region between the reflective surfaces of minors 2A and 3 A in which the gam medium is placed defines the laser resonator or cavity, and in the context of the present invention relates to the so-called "intracavitv region " The intensity (I) of the laser output may be determined both by the wavelength region over which the gain medium operates (λ) and the reflectivity of the resonator elements (e g . minors 2A and 3 A) Normally this output is broad and without shaφ. distinctive spectral features, as is shown in the plot of I versus wavelength (λ) provided in Graph 3 A of FIG 3 A By selecting different optical elements to form the laser cavity, the spectral output of the laser can be altered or "tuned " For example, and with particular reference to FIG 3B. a tuned resonator cavity may include a diffraction grating 2B which replaces the highly reflective minor 2A shown in FIG 3A As shown, the laser device therefore includes diffraction grating 2B, minor 3B, and a medium IB positioned therebetween In gen- eral. the result in spectral output from this tuned laser will be naπowed and appear as wavelengths within the oπginal spectral output of the laser defined by the gained medium and the minors (FIG 3A) For example, a schematic plot of intensity (I) versus wavelength (λ) illustrating a naπowed output is depicted in Graph 3B The laser output can also be altered by placing gaseous molecules, atoms, radicals, and/or ions in either their ground or excited states inside the optical resonator (e g , cavity) With reference to FIG 3C. a laser so configured may include a highly reflective minor 2C. a partially reflective minor 3C with a medium IC. and an intracavity absorber 4 placed therebetween In this case, intracavity absorber 4 may compnse such gaseous spe- αes (e.g., the sample containing contaminants) The effect of the intracavity gaseous species on the laser output can be observed For example, a plot of I versus λ for such a device is shown in Graph 3C Graph 3C compnses an absoφtion spectrum of the gaseous species contained within intracavity absorber 4 The distinct absoφtion features illustrated in Graph 3C anse from the intracavity species losses against which the laser gam must com¬ pete Thus, the absoφtion spectrum of the intracavity species may appear in the spectral output of the laser In particular, the laser output intensity (I) at wavelengths where the stronger intracavity absoφtion features compete effectively against the gain properties of the resonator are more reduced As a result, as illustrated, in¬ stead of a relatively smooth continuous output, such as shown m Graph 3 A. a structured laser output such as shown in Graph 3C mav be observed The decreases in intensity (I), as shown in Graph 3C. are due to absoφϋon by the gaseous intracavity species, l e . the more intense the absoφtion features, the larger the decrease in the laser output intensity In accordance with the present invention, the absoφtion spectmm obtained by intracavity laser measurements in which an intracavity absorber is employed can be utilized for the high sensitivity detec¬ tion of such gaseous species It has been found that each gaseous species can be uniquely identified by its respec¬ tive absoφtion spectmm (signature) and thus can be used to confidentlv identify such gaseous species (contaminant) The present inventors have found that the appearance of the absorbing species (gaseous elements) within the laser resonator before and/or dunng the competition between gam and losses which naturally occur as the laser system approaches threshold give rise to enhanced detection sensitivity through use of ILS In view of the fact that the losses associated with the intracavity absorber become part of the competition between the gam and losses within the laser, even a small absorbance associated either with a weak absoφtion transition and/or an extremely small absorber concentration is amplified dramatically dunng the gain/loss competition As a re¬ sult, such competition clearly appears in the output of the ILS signal (see Graph 3C) Thus, using these pnnci- ples. ILS can be utilized to detect both weak absoφtion and/or extremely small absorber concentrations ILS detection differs significantly from other spectroscopy methods which employ lasers As descπbed above, the output of a laser used for spectroscopy typically excites in a gaseous species, a secondary phenomena which is then monitored Alternatively, output of a laser may be passed through a gaseous species and the ab¬ soφtion of selected wavelengths in the output of the laser provides means for charactenzing the gas In either case, the operauon ofthe laser is separate from and unaffected by the gaseous species being measured With ILS detection, however, the operation of the laser is directly effected by the gaseous species In this manner, the ILS laser 500 itself acts as a detector In particular, the output from the ILS laser 500 as it exits the laser cavity contains spectroscopic information about the gaseous species This mode of operauon is umque to ILS detection and the ELS laser 500 Accordingly, ILS lasers 500 are distinctly different from conventional lasers and possess operational charactenstics which are not typical of conventional lasers. For example, absorbing species which produce loss are intentionally introduced into the laser cavity of ILS lasers 500 These absorbing species effect the operation ofthe ILS laser 500 and alter its output Also, unlike lasers employed m conventional applications. ILS lasers 500 operate at or above but close to threshold (e.g., within 10% of threshold power). However, operaung near threshold often causes the output of the ILS laser 500 to be unstable Accordingly, additional techmques directed to stabilizing the output of the ILS laser 500 may be required In contrast, conventional lasers typically operate well above threshold to maximize output Maximizing output, however, is not the objective of ILS lasers 500 Consequently, laser media which are inefficient and/or do not produce high output power may be employed for ILS detection when such laser media are unfavorable for most other laser applications The purpose of the ILS laser 500 is not to produce light, but to monitor loss within the laser cavity As descπbed above, mode competition inside the laser cavity enables such loss within the ILS laser 500 to be detected with enhanced sensitivity Since ILS detection possesses increased sensitivity beyond conventional optical spectroscopy techmques. interferences from background gases having both weak absoφuon and/or extremely small absorber concentra¬ tions may be significant, even if such interferences are negligible with conventional spectroscopy techniques The detection of gases via ILS can be achieved by using a vaπety of laser systems (As used herein, the laser system includes both the ILS laser 500 and the pump laser 100 ) These laser svstems each share several common properties which are required for extremely high detection sensitivity Pπor art has identified three such properties First, the laser systems exhibit multimode operation near the energy threshold for lasmg Sec¬ ond, the laser systems possess an operational wavelength bandwidth that is substantially broad relative to the ab¬ soφtion features of the gaseous species or contaminants (I e.. molecules, atoms, radicals, and/or ions) being monitored Third, the laser systems maintain stable intensity and wavelength It will be appreciated that a vaπetv of ILS laser systems having different physical and optical character¬ istics meet these above-listed cπteπa for exttemely high detection sensitivity The different physical and optical charactenstics of the laser systems may also provide distinct advantages such as with regard to the expenmental conditions (e.g , data acquisition times) under which ILS measurements are made Additionally, these different physical and optical charactenstics may influence one or more of the following (1) the gaseous species or con- taπunant (I e . molecules, atoms, radicals, and/or ions) that can be detected. (2) the respective concentrations of each gaseous species that can be determined, and (3) the practical types of samples to which detection can be applied. Examples of the latter include the total pressure of the sample, the sample size, and the environment which the sample is contained (e.g , reactive versus stable environments) Against the backdrop of these general pπnciples. in the context of the present invention, the present m- ventors have devised a commercially viable contaminant sensor system 10 which provides enhanced detection of contaminants in gaseous samples The contaminant sensor system 10 of the present invention possesses each of the above-mentioned properties required for extremely high sensitivity detection Additionally, the ILS laser system of the present invenuon is smaller, simpler, and less expensive to constmct than any ILS laser system disclosed in pnor art With reference now to FIGS IA and 2. and in accordance with a prefened exemplary embodiment of the present mvention, a detection system 10 suitably includes laser dπver or pump source 100. an ILS chamber assembly 400 in which ILS laser 500 is contained Spectrometer 600 and a detector/computer system 700, 800 are suitably optically connected to the output from the ILS laser 500 whereat the absoφuon spectmm is suitably manipulated thus enabling the high sensitivity detection of the presence and/or concentration of gaseous species (contaminants) In order to dπve ILS laser 500, system 10 requires a pumping source 100 which delivers radiation of sufficient power and within a suitable wavelength region so as to optically excite the ILS laser at or slightly above its threshold In this regard, it is important that ILS laser 500 operate such that the gain in the laser me¬ dium exceeds the overall optical losses, including those associated with the gain medium, minors, and non- minor intracavity optical elements, as well as the absoφtion of any gaseous species within the optical resonator cavity Moreover, preferably laser 500 operates with multiple longitudinal modes, I e . over a broad wavelength region Typically, a desirable bandwidth over which laser action occurs is between about 2 and 15 nanometers (nm) While ILS laser 500 can also operate with more than one transverse resonator mode, such is not necessary In accordance with a prefened exemplary embodiment of the present invention, the laser dπver com¬ pnses a semiconductor diode laser which serves as an optical pumping laser 100 Suitably, the optical parame¬ ters (e g , average power density, peak power density, divergence, and beam diameter) of pumping laser 100. I e , the semiconductor diode laser, advantageouslv match the optical requirements of ILS laser 500 As will be ap¬ preciated, to do so it is necessary to determine how many photons can be delivered within a specific volume and at a given distance from the pumping laser over a particular penod of time In general, in accordance with the present invention, such determinations are made in accordance with known theoretical and quantitative equa¬ tions such that the pumping laser 100 is suitably selected to advantageouslv match the optical characteristics of ILS laser 500 Accordingly, a diode laser pumping laser 100 is selected on the basis of its operational wavelength and on its optical parameters in a manner such that it can alone be used to excite ILS laser 500 Disadvantageously, the output beam of a diode laser is highly asymmetπc and/or astigmatic as is known in the art Consequently, some difficulty is associated with optically matching the output beam of a diode laser to the mode volume of the ILS gain medium contained within the ELS laser 500 As will be descπbed in greater detail hereinbelow. beam modification optics, such as beam shaping assembly 200. can be utilized to facilitate optical matching between the diode laser pump laser 100 and the ILS laser 500 In accordance with this first embodiment of the present invention, pumping laser 100 compnses a diode laser operating at a wavelength λ p (It should be appreciated, however, that dπver 100 may compπse any suitable optical pumping source, either coherent or incoherent, continuous or pulsed, that will excite ILS laser 500 ) In particular, pumping source 100 operates in a conventional manner and emits radiation over a desired frequency band and having a desired bandwidth Suitably, a beam E propagating from pumping laser 100 has a linear polaπzation and is rotatable perpendicular to the plane of propagation With continued reference to FIG 2. ILS laser 500, compnses an optical resonator cavity defined by the entire optical path length between respective minors 501, 503, 505 In those cases where system 10 is used to detect gases (contaminants) within the sample which do not chemically react with the components of the laser itself (e g , gain medium or crystal, minors, mechanical mounting, and the like), the resonator cavity can be de- fined by the region between minors 501. 503. and 505 In such a case, the gas sample region (I e , the region where the gas sample resides) compnses the region between minors 501, 503, 505 (excluding the laser crystal 507) However, for samples which do chemically react with one or more of the laser components (e g , a cor¬ rosive or reactive gas), it is desirable to separate the gas sample region from such components In accordance with a prefened embodiment of the present invention, a separate sample system 400 A mav be advantageously utilized to isolate the sample from the laser components With reference to FIGS 2 and 4. in accordance with this prefened aspect of the present invention, sample system 400A preferably compnses a gas sample cell body 406 suitably maintained within a gas sample cell holder 407 Respective cell windows 404 and 405 are suitably mounted on the distal ends of gas sample cell body 406 and provide optical access to the sample within the cell bodv Windows 404 and 405 also suitably seal cell body 406 As will be discussed in greater detail below, the region in which system 400A is suitably placed is astigmatically compensated Given this astigmatic compensation, windows 404 and 405 are not "active" optical elements which significantly alter or perturb the output of the ILS laser beam evcept with respect to transmis¬ sion An inlet conduit 408 and an outlet conduit 409 are operatively connected to gas cell bodv 406 With reference to FIGS 4, couplings 408 and 409 are advantageouslv employed to ensure efficient and effective passage of a gas sample into and out of gas (contaminant) sample cell system 404-409 Accordingly, the gas detector system 10 of the present invention can continuously monitor a flowing gas at vanable pressures in¬ cluding high pressure In particular, the use of the gas sample cell body 406 advantageouslv enables the opera¬ tion of the ELS laser 500 when measuπng gases having a pressure which is different (I e . higher or lower) than atmospheπc pressure or the pressure for which the ELS laser was designed to lase Without such a gas sample cell body 406. lasing would be difficult to achieve when momtonng a gas sample having a different pressure from the pressure at which the ELS laser 500 was aligned Thus, the gas sample cell body 406 allows stable op¬ eration of the ILS laser 500 for a gas sample having a pressure in excess of atmospheric pressure or the pressure which the ILS laser was design to lase Alternatively, the gas sample may have a pressure less than atmosphenc pressure or the pressure which the ILS laser 500 was design to lase (e g , when a vacuum exists in the gas sam¬ ple cell body 406) Additionally, the gas sample cell body 406 enables stable operation of the ILS laser 500 for a gas sample having a pressure which fluctuates Suitably, cell body 406 compnses a stainless steel or aluminum body having dimensions suitably in the range of 10 to 90 millimeters (mm) Preferably, the bodv 406 has an opening therein which is svmmetπcally in the center of gas sample cell body 406 Preferably, the diameter of the opening in cell body 406 is suitably se¬ lected to be significantly larger than the diameter of the incoming beam such that optical alignment of gas sam¬ ple system 400A may be easily obtained The thickness of windows 404, 405 is suitably selected to avoid interferometπc effects which may interfere with the quality of the ILS absoφtion spectmm obtained through operation of the gas detection system 10 In accordance with this aspect, the matenal used in forming windows 404. 405 is optimally chosen to minimize ab¬ soφtion losses in the region over which ILS laser 500 operates Windows 404. 405 may be formed from an opti- cally compatible mateπal. such as Infrasil™ available from Research Electro Optics of Boulder. CO Windows 404, 405 are suitably oπented at Brewster's angle and have antireflection coatings so as to further minimize re¬ flective losses from the window surfaces As so configured, gas sample cell 404-406 suitably permits beam H to pass through the gaseous sample to be analyzed Couplers 408, 409, are suitably selected to provide easy adjustment such as mav be required to rea- lign and/or align windows 404, 405 within ILS laser 500 without significantly alteπng the threshold pumping conditions The resonator cavity, in the case where system 400A is employed, is suitably defmed bv the physical length between minors 501, 503, 505 (including the laser crystal 507 and including the region between windows 404, 405 as well as windows 404 and 405 themselves that compnse the sample svste 400A) In the event that system 400A is present within chamber 400. it is necessary that any gases (contaminants) within chamber 400 that are to be detected are suitably removed or eliminated such that the ab- soφtion spectmm ofthe sample obtained through use ofthe gas detection system 10 is accurate as to the amount or presence of those gases (contaminants) within the gas sample contained within svstem 400 A In accordance with a prefened aspect of the present invenuon. chamber 400 advantageouslv evidences a sealed container which can be either purged of gas(es) (contaπunant(s)) to be detected, or evacuated to remove gas(es) (contamιnant(s)) to be detected, or in which the level of gas(es) (contammant(s)) can otheπ ise be reduced below the level to be detected in the sample system 400 A Continuous removal of the contaminants can be achieve, for example, by gettenng, as descnbed more fully below Refemng to FIGS 2 and 4. in accordance with a prefened embodiment of the present invention, ILS chamber 400 (excluding the sample system 400 A) suitably compnses a container base 401 and attachable top 410 Respective windows 402, 403 are suitably positioned in the walls of bodv 401 in a suitable manner and po¬ sition relative to the optical resonator cavity defined therewithin Container base 401 and top 410 suitably com¬ pnse stainless steel or aluminum Top 410 is advantageously secured to body 401 in accordance with any con¬ ventional technique suitable to permit evacuation, purging and or further removal of contaminants therewithin For example, a gasket 410 A or other suitable means together with sealing devices (e , mechanical assists, metal seals, adhesives, and the like all not shown) mav be employed for such purposes Desirably, base 401 and top 410 are effectively sealed pnor to delivery to a user in a relatively tamper-proof manner For the purpose of purging or evacuating chamber 400. an inlet 411 for vacuum pumping and/or purg¬ ing as well as an outlet 412 for vacuum pumping and/or purging is provided Windows 402, 403 are suitably disposed in the walls of container 401. therebv providing optical access to ILS chamber 400 Preferably, window 402 is suitably provided with an antireflective (AR) coating On the other hand, window 403 preferably compnses an optical window without an AR coating Window 402 is suitably designed to provide for maximum transmission at the wavelength λ p Similarly, window 403 is suitably designed to provide maximum transmission over the operational wavelength region ofthe ILS laser 500 More particularly, reducing gases (contaminants) in chamber 400 (excluding sample system 400A) to an acceptable level may suitably compnse purging or evacuating sealable container 401 with top 410 such that the level of gases (contaminants) is below that to be detected in the gas sample withm the sample system It will be appreciated that the loss contπbuted by the gases in the chamber 400 will be comparable to loss contπbuted by the gases in the gas sample cell body 406 when the ratio between (1) the concentration of gases in the cham¬ ber and (2) the concentration of gases in the gas sample cell body is equal to the ratio between (1) the length of the cavity (I e.. between minor 501 and minor 505) and (2) the length that the ILS laser beam traverses in the cell body In such cases where the contaminant compnses water vapor, it is necessary that water levels in chamber 400 be reduced below those which are contained within the sample In accordance with the present invention, detection levels of up to 10 parts per tπllion (ppt) are obtainable While any now known or hereafter devised method for removing contaminants (e g , water) from chamber 400 (excluding the sample svstem 400A) can be practiced within the context of the present invention, preferablv, the chamber is appropπatelv sealed and inert gases, such as nitrogen are pumped therein In some instances, it mav be necessary to further evacuate the cham- ber 400 so as to create a vacuum which removes substantiallv all contaminants contained therein Also, it may be useful to heat the chamber 400 while evacuating Applicauon of such heating or "baking" will enable a higher level of vacuum to be achieved if the chamber 400 is subsequently cooled while continually being evacuated In accordance with yet a further aspect of the present venuon. a getter (not shown) mav be advantageously em¬ ployed with chamber 400 to provide even further elimination of water within chamber 400 As will be appreci- ated by those skilled in the art. a getter (e g . a molecular sponge) having the capacity for continuously absorbing water may be utilized to reduce the level of water (contaminants) below the water concentration that is to be de¬ tected in the gas sample cell 404-406 (e g , 10 ppt) The sample is suitably communicated to system 400A by connecting a gas line to connectors 408. 409 and feeding the gas into sample system 400A (for example, when the sample compnses a conosive gas) However, in such cases where the sample does not chemicallv react with the laser components, the gas sample region may nominally be defined by the physical region between minors 501. 503. 505 (excluding laser crystal 507) A sample is suitably communicated into the chamber 400 itself (for example, when the sample compnses a non-conosive gas) As bπefly mentioned above. ILS sensor 500 suitably optically detects gaseous species (contaminants. e g , water vapor) contained in a sample placed within chamber 400 In accordance with the present invention. ILS laser 500 suitably compnses a crystal 507 mounted in a crystal holder 508 Crystal 507 is suitably mounted in crystal holder 508 such that crystal 507 also is optimally placed with reference to the incoming beam As previously bπefly mentioned, the incoming beam is suitably shaped through use of beam shaping assembly 200 such that incoming beam F suitably matches the mode volume ofthe ILS gain medium (e g , crystal 507) In general. ELS laser 500 is suitably configured such that the laser beam in the intracavity region is substantially parallel (I e . astigmatically compensated) in the region where the beam is directed to the gas sam¬ ple, e g , as contained within system 400A While a vaπety of optical configurations may be employed for this purpose, these minor configurations have been found to be particularly advantageous Such a configuration permits the accurate astigmatic compensation of the ILS laser beam thus permitting simultaneous meeting of the optical conditions necessary to pump ILS laser 500 at the lasmg threshold and generation of a laser beam which is substantially parallel as it is directed to the gas sample, such as contained within svstem 400A In accordance with this aspect of the present invention, respective minors 501. 505 and a folding πur- ror 503 are smtably employed for this purpose Minor 501 preferably compnses an optical minor having an AR coating optimally centered about λp Minor 501 also has a coating that effectively provides on the order of about 99 8% to about 100% reflectivity in the desired spectral region of operauon ofthe ILS laser 500 Suitably, minor 501 compnses a concave minor Preferably, minor 503 compnses a folding minor which is configured similarly to minor 501 and has a similar reflection coating Preferably, minor 505 compnses a flat minor (ROC « oo) With reference to FIG 2. one side of minor 505, the side facing minor 503 is advantageously provided with a reflective coating in the desired spectral re¬ gion for lasmg ofthe ILS laser 500 The other side of minor 505 is suitably uncoated Preferably surfaces of minor 505 are suitably wedged one against the other at an angle on the order of about 0 5 to about 3 0 degrees, opumallv about 1 0 degree The present inventors have found that wedging such surfaces in this manner tend to minimize undesirable reflections which mav lead to interference effects Mounts 502. 504. and 506 enable mechanical adjustment to opticalh align the ILS cavitv within cham¬ ber 400 Through the appropπate design, placement, and configuration of minors 501. 503. and 505 beam H is substantially parallel (i e . collimated) in the region between minors 503 and 505 As a result, sample svstem 400A can be inserted within the intracavitv region without significant deleterious effects in the performance of ILS laser 500 It will be appreciated, however, that the distance between anv reflective surfaces (e g . minors and win¬ dows) within the ILS laser 500 must not be such that any interference occurs inside the ILS laser Interference pattems are produced if the distance between the reflective surfaces equals an integer of number wavelengths comparable to the wavelength at which the ILS laser crystal 507 operates ILS laser crystal 507 preferably operates in a wavelength region suitable for detection of the contami¬ nants contained within the gas sample (e g , water vapor) over which a signature absoφtion spectmm can be obtained As previously mentioned, laser crvstal 507 generally exhibits the properties of a multimode laser sys¬ tem It will be appreciated that the mode spacing of output of the laser crystal 507 is required to be small enough to accurately represent the absoφtion features of the gas sample Light produced by laser crystal 507 preferably has a mode spacing of less than about 1 gigahertz (GHz), thus ensunng accurate spectral replication of absoφ¬ tion bands A particularly prefened laser medium compnses a crystal 507 cut at Brewster's angle to minimize reflective losses Laser crystals cunently available, while improving m efficiency, have considerable losses associated with them The losses translate to heat In accordance with the present invention crystal 507 suitably is mounted m a manner allowing for the effective removal of the heat thus generated in operauon It should be appreciated, however, that as the efficiency of laser crystals continue to improve as new crystals are developed, the need or requirements on heat removing devices will be reduced and likely, at some point, the losses will be small enough that the need to remove the heat may be eliminated all together However, using crystals presently available. ILS laser system 500 preferably further compnses a heat sink system 500A With continued reference to FIG 2 and additional reference to FIG 5. heat sink system 500 A is con¬ nected to mount 508 and crystal 507 (not shown m FIG 5) As shown best in FIG 5. holder 508 preferably compnses a two-part holder 508 suitably ananged to mechamcally hold the laser crystal 507 Heat sink system 500A preferably compnses a copper heat sink bπdge 510. a thermal electπc cooler 509. and a thermal electπc sensor 511 Additionally, an electπcal temperature control interface 512 is provided in the walls of the body 401 of the chamber 400 Mount 508 together with bπdge 510. cooler 509. and sensor 511 serve to properly align crystal 507 with respect to the other optical elements compnsmg ILS laser 500. as well as enable control of the thermal properties of the crystal In accordance with the prefened aspect of the present invention, heat sink system 500A is in direct physical contact with crystal 507 Heat produced by normal operation of crystal 507 through optical excitation occasioned by beam F is effectively conducted away from crystal 507 thereby maintaining a relatively constant operating crystal temperature In particular, in the present invention, the temperamre of the laser crystal 507 is held constant to within about ±1°C Preferablv. crystal holder 508 compnses copper/aluminum which is opera¬ tively connected to cooler 509 and heat sink bπdge 510 Suitably, heat sink 510 compnses a copper heat sink lo¬ cated in bodv 401 of chamber 400 such that excess heat is conducted away from cπ'stal 507 Sensor 511 meas¬ ures the temperature of holder 508. cooler 509. bπdge 510. and crystal 507 such that optimum operating tem¬ peratures are maintained In accordance with this aspect ofthe present invention, thermal management of crystal 507 is obtained, thereby eliminating the need for coolant liquids which may unnecessaπly compromise and complicate the operation ofthe gas detection system 10 ILS laser system 500 is suitably ananged such that the angle (φ) of the beam exciting crvstal 507 and the reflected beam from minor 503 is on the order of about 20° to 30°. more preferablv from about 23° to 27°. and optimally about 25° This beam (beam H) is directed to the sample system 400A Output beam G from ILS laser 500 after passing through sample svstem 400A is directed to spectrome¬ ter assembly 600 Such direction can be obtained, such as shown in FIG 2. through use of a folding minor 601 smtably mounted in a minor mount 602 Minor 601 preferably compnses a plane minor containing a coating for high reflectivity in the desired spectral region of operation ofthe ILS laser 500 With continued reference to FIG 2. spectrometer 600 compnses dispersive gratings designed to spec- trally resolve a coherent beam, in particular, the absoφtion spectmm of the contaminant in the sample to be de¬ tected Smtably, the spectral dispersion of the spectrometer 600 is sufficiently large to clearly resolve the absoφ¬ tion features of such contaminant, thus enabling the identification ofthe "signature" of each contaminant and the quantitative determination of the concentration of the contaminant While any now known or hereafter devised spectrometer may be utilized in accordance with the present invention, preferably spectrometer 600 compnses two diffraction grating assemblies 600 A and 600B operaung in conjunction with an optical beam expanding as¬ sembly 600C and a focusing lens assembly 600D Optical beam expanding assembly 600C preferably compnses lenses 603 and 605 smtably mounted within detector 10 through use of mounts 604 and 606 Lens 603 preferably compnses a negative lens and lens 605 preferably compnses a collimating lens, each preferably having an AR coating centered about the absoφtion spectrum ofthe contaminant in the sample to be detected Diffraction grating assemblies 600A and 600B suitably compnse respective diffraction gratings 607 and 609 mounted on respective diffraction grating mounts 608 and 610 As will be appreciated, mounts 608, 610 permit tuning and adjustment of diffraction gratings 607, 609 within spectrometer 600 A lens 611 also preferably having an AR coating centered about the absoφtion spectmm of the con¬ taminant focuses the output ofthe spectrometer onto multichannel anay detector 701 The spectral region over which the ILS laser 500 operates is produced by spectrometer 600 and is dis¬ placed spatially across a plane where the multichannel array detector 701 is suitably fixed on a mount 702 An electromc board 703 containing the control and timing electronics required to operate and read mformation from the multichannel detector 701 is operatively connected thereto As a result, the entire spectrally dispersed ab¬ soφtion spectmm of the particular contaminant sought to be identified through use of the gas detection system 10 can be obtained The positions and relative intensities of the specific absoφtion features of the contaminant can be utilized to uniquely identify the detected gas (contaminant) as well as quantitatively determine the amount of the gas (contaminant) so detected The detector 701 may compnse. for example, an InGaAs multichannel (256 pixel. 100 μm spacing) ar¬ ray detector The light detected by the multichannel detector 701 is preferably transduced into electronic signals at each detector element (pixel) with signals thereafter transfened to an analog-to-digital (A/D) converter 801 through board 703. Converter 801 is suitably connected through a BNC connector and shielded cable 704 such that the accurate transfer of information is ensured Once the data is so converted, it is sent to a computer 802 which may be smtably programmed to convert the electronic signals into spectral information, I e . spectral sig¬ natures identifying a particular gas (contaminant) and concentration of gases (contaminants) With reference now to FIG 2, as previously menuoned. the gas detection system 10 detects the spec¬ trally resolved region over which the ILS laser 500 operates once diode laser pumping laser 100 causes ILS laser to operate at or near its threshold level As descnbed above, the output beam of a semiconductor diode laser is highly asymmetπc and/or astig¬ matic Consequently, the volume of the pumping radiation from diode laser pump laser 100 that is transfened to the ga medium (l e.. crystal 507) does not suitably match the volume that must be optically excited within the gain medium of ILS laser 500. Beam modification system 200 is thus utilized to facilitate such volume match- ing; that is to optimize the radiation delivered to ILS laser 500 by focusing the required photon density into the conect location and volume of the gain medium of the ILS laser. Specifically, beam modification system 200 is used to alter the pumping radiation of dπver 100 to meet the requirements of laser 500 To conect the astigma¬ tism, asymmetry, and divergence associated with the output beam (beam E) of the diode laser pump laser, nor¬ mal macroscopic optics and or micro-optics that are placed within several micrometers of the semiconductor di- ode laser may be employed. Examples of macroscopic optics which may be employed to shape the output beam (beam E) of the diode laser pump laser 100 include a beam expanding telescope or alternatively, a pair of anamoφluc pπsms With continued reference to FIG 2. in some applications, it may be necessary that the incoming beam be appropπately focused into the laser medium (e.g , ion-doped crystal or glass) 507 within ILS laser 500 In ac¬ cordance with the prefened aspect of the present invention, a focusing lens 206 mav be advantageously mounted m a laser lens mount 207 such that lens 206 is smtably located within the path of beam F In accordance with a particularly prefened aspect of the present invenuon. focusing lens 206 smtably compnses an optical focusing lens with an AR coating centered about a wavelength λ p As will be appreciated by those skilled in the art. the quality of the quantitative information obtainable through use ofthe gas detection system 10 depends, at least in part, on stable operation of ILS laser 500 In the context of the present invention, the stability of the ILS laser 500 depends directly on how reproducibly the ILS laser reaches threshold Desirably, pumping laser 100 suitably pumps ILS laser 500 continuously near threshold where its greatest sensitivity mav be obtained However, not all dπvers are capable of reliablv operating m a continuous fashion In addition, operating continuously tends to require substantial effort to maintain amplitude and wavelength stability of the ILS laser 500 which mav have an adv erse impact on cost and therebv produce an adverse impact on the commercial viability ofthe gas detection svstem 10 As an alternative to operating ILS laser 500 continuously, and in accordance with a prefened embodi¬ ment ofthe present invention, the ILS laser is operated in a "pulsed mode" or a "chopped mode" As used herein, the terms "pulsed mode" and "chopped mode" refer to processes for reproducibly exposing ILS laser 500 (1 e , ion-doped crystal 507) to pumping radiation such that the ILS laser will be switched on and off Chopping cone¬ sponds to causing the pump radiation to alternate between zero intensity and a fixed intensity value at a fixed frequency and over a fixed (often symmetnc) duty cycle In contrast, pulsing conesponds to causing the pump radiation to alternate between zero intensity and a non-zero intensity (which is not necessanlv fixed) over a duty cycle which may be vaned and which is typically asvmmetπc (Alternatively, the pump radiation can be modu¬ lated such that the intensity of the pump beam does not reach zero intensity but fluctuates altemately between at least two fixed intensity levels which bπngs the ILS laser 500 alternately above and below threshold ) Through operation in the chopped mode or the pulsed mode, stable operation of ILS laser 500 consis¬ tent with the quantitative spectral and concentration measurements may be obtained in a commercially viable manner Such intensity modulation (e g . interruption) can be achieved utilizing, among other things, a me¬ chamcally operated chopper, an acousto-optic modulator, a shutter, and the like Alternatively, the output intensity of diode laser pump laser 100 may be modulated instead of secondar- ily chopping the output beam (beam E) In parucular. the electπcal power supplied to the diode laser pump laser 100 can be modulated to alternately obtain voltages just above and below that required to cause the ILS laser 500 to lase Consequently, the ILS laser 500 will be turned on and off While any now known or hereafter devised manner of producing the chopped mode or the pulsed mode can be utilized in accordance with the present invenuon. advantageously such modes are obtained through use of modulation assembly 300 Desirably, modulating device 300 does not steer the pumping beam and is synchro¬ nized to modulate the intensity ofthe ILS laser output beam exiting chamber 400 In accordance with this aspect of the present invention, beam E is penodicallv prevented from reaching ILS laser 500 by the modulation assembly 300 which penodicallv blocks and transmits the pumping laser beam E It should be appreciated that the modulation assembly 300 may compnse a vanety devices, e g . mechanical or electro-optical, which penodicallv blocks or modulates the pumping laser beam As previously mentioned, in ac¬ cordance with the present invention, the intensity of the pumping radiation emanating from pump laser 100 must only fall below that reqmred to make ILS laser 500 reach threshold and therefore, is not required to reach a zero value It will be further appreciated, however, that the total optical pumping energy (I e . the integrated in¬ tensity) delivered by the pump laser 100 to the ILS laser 500. duπng each peπod of modulation, must remain constant With either the pulsed mode or chopped mode, the output of ILS laser 500 which contains the absoφ¬ tion informauon may be penodicallv sampled Advantageouslv, the output beam E from the pump laser 100 is modulated, while modulation device 304 suitably modulates the output beam of ELS laser 500 that exits chamber 400, thereby penodicallv sampling the output of the ILS laser Modulation assembly 300 altematively blocks pumping beam E from reaching ILS laser 500 gam medium (e g . crystal 507), while modulator 304 alterna¬ tively blocks ILS laser beam exiting chamber 400 from reaching both spectrometer 600 and detector 700 ILS laser 500 ouφut exiting chamber 400 is suitably directed to modulator 304 In accordance with vaπous aspects of the present invenuon. modulator 304 compnses an acousto-optic modulator It should be ap¬ preciated, however, that other available devices, for example, another mechamcally operated chopper or even a shutter may be suitably employed for this purpose As discussed above, to extract quantitative information from the ILS laser 500 exiting beam, modulator 304 penodicallv samples the output of ILS laser 500 which contains the absoφtion data of contaminants (e g , gaseous species) contained in the parucular sample (It will be appre- ciated that instead of employing modulator 304. detector assembly 700 mav be altematelv switched on and off to penodicallv sample the ouφut of ELS laser 500 as will be discussed more fully below ) While the specific form of modulation is vanable. use of modulation enables generation of a reproduci¬ ble, effective optical path length within ILS laser 500 Stated another way. by varying the generation time (φ, l e . the time peπod over which intracavity mode competition within ILS laser 500 is permitted to occur, the ef- fective absoφϋon path length within the intracavitv resonator can be controlled and selected to achieve optimum quantitative application ofthe ILS gas detector 10 Advantageously, modulation of the output of the pump laser 100 is synchronized with modulation de¬ vice 304 such that quantitative information from ILS laser 500 can be extracted in a time-resolved manner Pump radiation E is effectively delivered to ILS laser 500 intermittently by passing pump beam E through modulation assembly 300 De venng radiation intermittently alternatively bnngs ILS laser 500 near threshold and below threshold After the generation time, tg, elapses with ILS laser 500 at or slightly above its threshold, the ILS laser output is deflected by modulator 304 to the entrance of spectrometer assembly 600 and detector as¬ sembly 700 for detection However. ILS laser 500 output beam G is deflected to spectrometer 600 and detector 500 for only a short time interval determined by the synchronization of modulation assemblv 300 and modula- tion device 304 The synchronization of modulation assembly 300 and modulation device 304 ensures that ra¬ diation from ILS laser 500 is sampled over a well-defined time interval (t g ) Synchronization of modulation assembly 300 and modulation device 304 may be achieved by several con¬ ventional methods such as. for example, through electronic control by a digital circuit (not shown) operated by computer 802 operatively connected to detector 10 Typically, synchronization of modulation assembly 300 and modulation device 304 will be suitable to generate generation times (t g ) on the order of less than about 300 to 500 microseconds (μsec). more preferablv on the order of less than about 10 to 100 μsec. and optimally on the order of less than about 1 μsec Such synchronization results in the modulation assembly 300 allowing the output of the pump laser 100 to pass uninterrupted when modulator 304 is closed The time interval between when the output of the pump laser 100 is not interrupted by the modulation assembly 300 and when modulator 304 opens is determined by tg The generation ume. tg, can be vaned without the use of modulator 304 by pulsing the output of the pump laser 100 As descπbed above, pulsing coπesponds to causing the pump radiation to alternate between zero intensity and a non-zero intensity value (which is not necessaπly fixed) over a duty cycle which may be vaned thereby bπnging the ILS laser 500 altemately below and above (or at) threshold Accordingly, the ILS la¬ ser 500 is turned off and on The duration over which the ILS laser 500 lases mav be vaned by changing the duty cycle ofthe ouφut of pump laser 100. in particular, the duration over which the pump laser pumps the ILS laser to about threshold Accordingly, the generation time (t-J, I e . the time peπod over which intracavitv mode com- petition within ILS laser 500 is permitted to occur, is vaned In this case, the detector assemblv 700 remains continuously activated and the output of the ILS laser beam exiting chamber 400 is allowed to continuously reach the spectrometer assembly 600 and the detector assemblv As descπbed above, however, the total optical pumping energy or integrated intensity delivered by the pump laser 100 to the ILS laser 500 dunng each penod of modulation must remain constant, even though the duration over which the of the ELS laser outputs light is changed To maintain a constant total optical pumping energy, the intensity level of the pump beam is adjusted with each different peπod of modulation over which the tg is vaned Accordingly, both the intensity of the pump beam and duration over hich the pump laser 100 pumps the ILS laser 500 to threshold, are a changed to provide different generation times Pulsing the output of the pump laser 100 can be achieved by externally controlhng the transmission of the pump beam with a "pulser" Altematively. the output intensity of diode laser pump laser 100 mav be modu¬ lated by varying the electπcal power supplied to the diode laser pump laser (As descnbed above, the electπcal power supplied to the diode laser pump laser 100 can be modulated to altemately obtain voltages just above and below that required to cause the ILS laser 500 to lase ) Thus, there has been disclosed an apparatus for detecting the presence and concentration of contaπu- nants in a gas utilizing detector system 10 In accordance with a prefened embodiment of the present invention, a method for high sensitivity detection is also disclosed herein The method suitably compnses reducing gases (contaminants) in sample chamber 400 to an acceptable level, placing a sample of gas to be detected in sample system 400A, pumping ELS laser 500 at or near threshold, penodicallv sampling the optical output from ILS la¬ ser 500. preferably via modulation assembly 300. measuπng the absoφtion spectmm of the gases (contaminants) within the sample with spectrometer assembly 600 and detector assembly 700. and analyzing the absoφtion spectrum to identity the gaseous species (contaminants) and determine its concentration within the sample utiliz¬ ing computer/software system 800 More particularly, reducing gases (contaminants) in chamber 400 (excluding sample system 400A) to an acceptable level may smtably compπse purging or evacuating sealable container 401 with top 410 such that the level of gases (contaminants) is below that to be detected in the gas sample within system 400A As dis¬ cussed previously, other mechanisms for reducing the level of gases (contaminants) may be utilized provided they can reduce the level to an acceptable level Preferably, container base 401 is sealed to top 410 and contami¬ nants contained therein are effectively removed (or reduced to an acceptable level) Desirably, base 401 and top 410 are effectively sealed pπor to delivery to a user in a relatively tamper-proof manner A sample is suitably commumcated to system 400A by connecting a gas line to connectors 408, 409 and feeding the gas into sample system 400A (for example, when the sample compnses a conosive gas), or into the chamber 400 itself (for example, when the sample compnses a non-conosive gas) Pumping ILS laser 500 at or near threshold, more particularly, compnses selecting the conect pump laser 100 power, focusing conditions at laser crystal 507 utilizing beam modification optics 200 and lens 206, and modulation conditions utilizing modulator system 300 The method for detecting gaseous species in accor¬ dance with the present invention further compnses dπving ILS laser 500 at or near to but above threshold In accordance with the present invenuon. dπver 100 suitably pumps ILS laser 500 Where necessary, pumping beam E is suitably shaped bv beam shaping assembly 200 to meet the optical requirements of ILS laser 500 Further, where gas detection svstem 10 is operated in a pulsed or chopped mode, as descπbed above, modulation assembly, and m particular, modulator 301 penodicallv interrupts pump beam F thereby preventing beam F from reaching ILS laser 500 Beam F output from modulator 301 and beam shaping assembly 200 is suitably directed to ILS laser 500 In accordance with this method, as beam F enters chamber 400 through window 402 disposed in the wall of sealed container body 401. beam F is suitably directed to ILS laser 500 Additional focusing and direction of beam F may suitably be achieved as beam F passes from window 402 to focusing lens 206. where the focusing lens smtably focuses beam F and directs it through minor 501 Beam F suitably pumps crystal 507 at or near threshold, and the output beam is suitably directed to the gas sample within svstem 400A. such as bv minors 503 and 505 The exiting beam, containing the absoφtion data from the gas (contaminant) sample, then exits gas chamber 400 through window 403 suitably disposed in a wall of sealed container body 401 ILS laser 500 may be operated in a pulsed mode or a chopped mode using modulator 304 which is smtably synchronized to modulator 301, and which penodicallv samples the ouφut beam from ILS laser and passes the sampled output thus obtained to spectrometer assembly 600 and detector assembly 700 Alternatively, the electπcal power supplied to the diode laser pump laser 100 mav be modulated and synchronized with modu¬ lator 304 Smtably, minor 601 directs sampled ouφut beam G from ILS laser 500 to spectrometer assembly 600 and detector assembly 700 Altematively, instead of using modulator 304, detector assembly 700 may be switch on and off to sample the output from ILS laser 500 The method for detecting gaseous species in accordance with the present invention further compnses analyzing output beam G from the ILS laser 500 Preferably, spectrometer assembly 600 spectrally resolves and detector assembly 700 smtably analyzes beam G from ILS laser 500 Spectrometer assembly 600 suitably spec¬ trally disperses beam G from ELS laser 500 through beam expanding assembly 600C. diffraction assemblies 600 A. 600B and focusing assembly 600D. Spectrally-resolved ILS absoφtion data exiting spectrometer assembly 600 is suitably displaced spatially to be detected by multichannel detector 701 It will be appreciated that the gas detection system 10 can be utilized to obtain absoφtion spectra for contaminants, such as water vapor, in conosive (e.g., HCl) or non-conosive (e.g., N 2 ) over a vanety of wave- length regions. Given the relationship between intensity and concentration, once a charactenstic signature of the con¬ taminant gas, e.g , water vapor, is obtained, the concentration of the contaminant contained withm the sample can be readily obtained. In accordance with the present invenuon, computer 802 can be suitably programmed to inteφret the data and provide an output indicative of the presence and/or concentration of the contaminant con- tamed within the sample In the embodiment of the gas detector system 10 of the present invention descπbed above, the ILS laser 500 has a laser cavity formed from three minors (l e . minors 501. 503. and 505) wherein minor 503 is a fold¬ ing minor This configuration of three minors is designed to provide an astigmatically compensated or substan¬ tially parallel beam in the region between minors 503 and 505 Alternatively, the gas detection system 10 ofthe present invention may compnse an ILS laser 500 hav¬ ing a simplified laser cavity In an alternative embodiment of the present invention, the laser cavity is not de¬ signed to provide astigmatic compensation Rather, the laser cavity is formed between two minors and has a substantially linear configuration .vhich does not provide astigmatic compensation However, the hnear cavity design employed by this alternative embodiment of the present invention enables a gas detector system 10 to be constmαed which is substantially smaller and simpler Consequently, the alternative embodiment of the gas de- teαor system 10 of the present invention is less expensive to constmct as well as easier to operate than the em¬ bodiment descπbed above Additionally, this alternative embodiment of the present invention can be constmcted to be more mgged or mechamcally stable as is required by many practical applications Refemng now to FIG. 6, a gas detection system 10 of the present mvention is depicted compnsmg an ILS laser 500 with a laser cavity 902 which is a linear laser cavity By "linear laser cavity" or "linear laser reso¬ nator" is meant a laser cavity (or laser resonator) 902 that is equivalent to a laser cavity formed between only two minors In its simplest form, a linear laser cavity compnses a laser cavity 902 formed between a first minor and a second minor. It will be appreciated that any number of additional minors which are planar may be included to steer (i.e.. alter the path) of a beam which travels from the first minor to the second minor The inclusion of these additional minors, however, does not modify the shape of the beam withm the laser cavity 902 (provided that the distance between the first minor and the second minor is not changed). Accordingly, the inclusion of additional planar minors in a laser cavity 902 of a laser does not effect the operation of the laser but merely al¬ ters the manner in which the laser is physically configured Consequently, a laser cavity 902 formed between a first minor and a second minor, having additional planar minors therebetween, is eqmvalent to a laser cavity formed solely between the first minor and the second minor, removing the additional planar minors alters nei¬ ther the shape of the beam nor the operauon of the laser. The use of such additional planar minors, however, may be employed to fit a laser cavity 902 into a package having spatial constraints In accordance with an aspect of the present invention, the ILS laser 500 compnses an ion-doped crystal 507 which resides within a laser cavity 902 which is a hnear laser cavity An ILS laser 500 compnsing an ion- doped crystal 507 within a laser cavitv 902 which is a linear cavity is a completely novel optical design It will be appreciated that the ILS laser 500 of the present invention which is based on a linear cavity 902 requires fewer and simpler optical components than pπor art designs In this second embodiment of the present invenuon. the pumping source 100 mav compπse a semicon¬ ductor diode laser, a solid state crystal laser (e g . Nd YAG). a gas laser, one or more flashlamps. or any other pumping source operating at a wavelength τ which is suitable for pumping ILS laser 500 Preferably, however, the pumping source 100 compnses a diode laser The ion-doped crystal 507 in the ILS laser 500 may compπse. e g . Tm 3* . T * YLF or Tm 3+ YAG. and preferably operates at or near room temperature Other suitable ion-doped crystals 507 may also be employed in the practice of the present invention The ion-doped crystals 507 may compπse. for example, other ion doped vibroruc laser crystals Examples of ion-doped crystals 507 suitably employed in the ILS laser 500 of the present invenuon are listed in Table 1 It will be readily apparent to those skilled in this art. however, that other lon- doped crystals 507 may be employed as is suited to the particular use contemplated Accordingly, it is not in¬ tended that the ion-doped crystals 507 specifically disclosed herein, including those listed in Table 1. are to be considered as exhaustive Refemng now to Table 1. a list of crystals that can be optically pumped bv the diode laser pump laser 100 is provided The crystals comprise a host mateπal doped with ions The host mateπals listed include the following YAG. yttnum aluminum garnet (Y AUOι : ). YSO or YOS. vitπum orthosi cate (Y : SιO : ). YSAG. yt¬ tnum scandium aluminum garnet GSGG. goda nium scandium gallium garnet (Gd 3 Sc 2 Ga 3 Oι;fc), YLF. lithium yttnum fluonde (LiYF;). YSGG. yttnum scandium gallium garnet (Y 3 Sc 2 Ga 3 θι;), LUAG. lute- tium aluminum garnet (LuiAUOi;). Ca Y SOAP, calcium yttnum oxyapatite silicate (Ca Y 4 (Si:0 3 ).-0). Ca La SOAP, calcium lanthanum oxyapatite silicate (Ca La (SHO^O). and glass The dopant ions include Cr. chro- mium. Tm. thulium: Ho. holmium. and Er. erbium Accompanying the crystals listed in Table 1 is a wavelength conesponding to the pumping radiation and a wavelength or wavelengths conesponding to the resultant output from the crystal As depicted in FIG 6. the ion-doped crystal 507 has one end 904 which has a reflective coat¬ ing deposited thereon Another end 906 of the ion-doped crystal 507 is cut at an angle between about 2° to 3° to reduce interference effeαs (It is conceivable that the end 906 of the ion-doped crvstal 507 is cut at Brewster's angle, however, only in the case where the ion-doped crystal is large enough to accommodate such a cut) The laser cavity 902 as shown in FIG 6 is formed between a first minor (pump minor) 908 and a second minor (ouφut minor) 910 The first minor 908 compnses the reflective coating deposited on the one end 904 of the ion-doped crystal 507 The second minor 910 compnses a curved reflector The laser cavity 902 is a linear laser cavity as defined above, since it is formed between only two minors The ion-doped crystal 507 is pumped by pump beam F which is shown in FIG 6 as incident on the one end 904 which has a reflective coating deposited thereon Accordingly, the ion-doped crystal 507 is optically pumped The output beam from the ion-doped crystal 507 (beam H) exits the laser medium through the other end 906 of the ion-doped crystal which is cut at an angle to reduce interference effects as discussed above The ouφut beam from the ion-doped crystal 507 (beam H) extends across the laser cavity 902 to the second minor 910 (It will be appreciated that due to refracuon the beam. 1 e , beam H within the laser cavity 902 is bent slightly, e g , between about 2° to 3°. at the end 906 of the ion-doped crystal 507 which is cut at an angle, e g . between about 2° to 3° ) TABLE 1 LIST OF LASER CRYSTALS THAT CAN BE OPTICALLY PUMPED BY THE OUTPUT OF A DIODE LASER It will further be appreciated that longitudinal optical pumping is employed to pump the ILS laser 500 depicted in FIG 6 The terms longitudinal optical pumping, longitudinal pumping, and longitudinally pumped are used herein in their conventional meamng which is well-known in the art Specifically, the pump beam F mαdent on the one end 904. is directed along the laser cavity 902 in about the same direction as the output beam from the ion-doped crystal 507 (beam H) which extends across an axis running through the laser cavity from the first minor 908 to the second minor 910 (or in the about the same direction as the beam within the ion-doped crystal) It will be appreciated that the ion-doped crystal 507 typically has a symmetnc axis extending from the one end 904 to the other end 906 Longitudinal pumping coπesponds to pumping in a direction parallel to the symmetnc axis ofthe ion-doped crystal 507 Analogously, an ion-doped crystal 507 which is pumped by a pump beam directed along the laser cavity 902 and m approximately the same direction as the ouφut beam from the ion-doped crystal (beam H) which extends across the laser cavity to the output minor 910 (or in the about the same direction as the beam within the ion-doped crystal) is said to be longitudinally pumped Alternatively, transverse optical pumping may be employed to pump the ILS laser 500 The terms transverse optical pumping, transverse pumping, and transversely pumped, are used herein in their conventional meamng which is well-known in the art In particular, the ion-doped crvstal 507 may be pumped by a pump beam which is incident on a side of the ion-doped crystal such as side 912 shown in FIG 6 Transverse optical pumping refers to the case where the pump beam, I e . the output of the pump laser 100 which is incident IOΠ- doped crystal 507. is directed perpendicular to the symmetnc axis of the ion-doped crvstal With transverse opti¬ cal pumping, the pump beam is directed approximately perpendicular to the output beam from the ion-doped crystal 507 (beam H) which extends across an axis mnning through the linear laser cavity 902 from the first mir¬ ror 908 to the second minor 910 Ia particular, an ion-doped crystal 507 which is pumped by a pump beam inci¬ dent on a side of the ion-doped crystal 507. such as side 912. is said to be transversely pumped Similarly, an ion-doped crystal 507 which is pumped bv a pump beam which is directed approximateiv pcφcndicular to the direction of the output beam from the ion-doped crvstal 507 (beam H) which extends across the laser cavity 902 to the output minor 910. is also said to be transversely pumped When the pumping source 100 compnses a semiconductor diode laser or a solid state crvstal laser (e g . Nd.YAG). longitudinal pumping may be employed Altematively. flashlamps or diode lasers can be emploved transverse pumping It will be appreciated that with transverse pumping, a plurality of flashlamps configured to pump from more than one side ofthe ion-doped crvstal 507. may be used as the pumping source 100 As shown in FIG 6. a gas sample cell system 400A resides within the laser cavity 902 The gas sample cell system 400 A is shown compnsing sample cell 406 provided with inlet conduit 408 and outlet conduit 409 As descnbed above, the sample cell 406 is not required for gas samples which are non-conosive. in which case. the gas may be contained within the entire laser cavity 902 In accordance with the present invention. optical excitation of the ion-doped crvstal 507 is provided bv pumping source 100 As shown in FIG 6. the pump laser 100 may compπse semiconductor diode laser 914 powered by an electπcal power supply 916 and cooled by thermoelectπc cooler 918 The semiconductor laser di¬ ode 914 and the thermoeleαnc cooler 918 are mounted in a heatsink 920 provided to dissipate heat generated by the semiconductor diode laser As descπbed above, the output beam (beam E) of the semiconductor diode laser 914 is highly asymmet- nc and or astigmatic To conect the asymmetry and or astigmatism associated with the output beam (beam E) of the semiconductor diode laser 914. beam shaping assembly 200 is employed The beam shaping assembly 200 enables the ouφut beam (beam E) of the semiconductor diode laser 914 to be optically matched to the mode vol¬ ume of the ILS gam medium (i.e , the ion-doped crystal 507) contained with the ILS laser 500 FIG 6 shows the beam shaping assembly 200 compnsmg macroscopic optics which include a pair of anamoφhic pπsms 922 and a pair of lenses 924 Alternatively, a beam expanding telescope or micro-optics that are placed within sev- eral micrometers ofthe semiconductor diode laser 914 may be employed It will be appreciated that the ILS laser 500 can be operated either in a continuous mode (cw) or in a pulsed mode or a chopped mode As descπbed above, chopping conesponds to causing the pump radiation to alternate between zero intensity and a fixed intensity value at a fixed frequency and over a fixed (often symmet¬ nc) duty cycle. In contrast, pulsing conesponds to causing the pump radiation to alternate between zero intensity and a non-zero intensity (which is not necessanlv fixed) over a duty cycle which may be vaned and which is typically asymmetnc (Alternatively, the pump radiation can be modulated such that the intensity of the pump beam does not reach zero intensity but fluctuates alternately between at least two intensity levels which bnngs the ILS laser 500 altemately above and below threshold ) As descnbed above, the pulsed mode or the chopped mode have been shown to provide advantages with respect to stability and detection sensitivity Preferably, the ILS laser 500 is operated in the pulsed mode or the chopped mode or is otherwise modulated Operation in the continuous mode, however, can be utilized for certain circumstances As shown in FIG 7, a mechanical or electro-optic (e g . acousto-optic) modulator 926 can be inserted between the pumping laser beam F and the ion-doped crystal 507 The mechanical or electro-optic modulator 926 is powered and controlled by a modulator dπver 928 In the case where the pumping source 100 compnses a semiconductor diode laser 914. the electπcal power from the power supply 916 to the semiconductor diode laser can be pulsed or modulated Alternating volt¬ ages to the semiconductor diode laser 914 are provided which thereby cause the output of the semiconductor di¬ ode laser to fluctuate between high and low intensity levels The high and low intensity levels ofthe output of the diode laser pumping source 100 are such that the ion-doped crystal 507 is optically excited just above and below the threshold required for lasmg The ILS laser 500 is consequently turned on and off FIG 7 shows that the output of the ILS laser 500 (beam G) having passed through the gaseous species to be monitored is directed to a spectrometer assembly 600 Pπor to reaching the spectrometer assembly 600. however, the output ofthe ILS laser 500 (beam G) passes through modulation device 304 In accordance with vaπous aspects of the present invention, modulator 304 compnses an acousto-optic modulator. It should be appreciated, however, that other available devices, for example, another mechanically operated chopper or even a shutter may be suitably employed for this purpose As discussed above, to extract quantitative information from the ILS laser 500 exiting beam, modulator 304 penodicallv samples the output of ILS laser 500 which contains the absoφtion data of contaminants (e g , gaseous species) contained in the par- ticular sample Advantageously, pumping laser beam F is modulated, while modulation device 304 suitably modulates the ouφut beam of ILS laser 500 that exits the laser cavity 902. thereby penodicallv sampling the output of ILS laser Modulator 926 alternatively blocks pumping beam F from reaching ILS laser 500 gain medium (e.g.. crystal 507). while modulator 304 alternatively blocks the beam exiting the laser cavity 902 (beam G) It will be appreciated that instead of employing modulator 304. detector assemblv 700 may be alter¬ nately switch on and off to penodicallv sample the output of ILS laser 500 Modulation of the output of the pumping source 100 is synchronized with modulation device 304 such that quantitative information from ILS laser 500 can be extracted in a time-resolved manner Pump beam F is effectively delivered to ILS laser 500 (I e . ion-doped crystal 507) intermittently b passing pump beam F through modulation assembly 300 De venng radiation intermittently alternatively bnngs ILS laser 500 near threshold and below threshold After the generation time. t g . elapses with ILS laser 500 at or above its threshold. ILS laser 500 output is deflected by modulator 304 to the entrance of spectrometer assembly 600 and detector assembly 700 for detection However. ILS laser 500 output beam G is deflected to spectrometer 600 and detector 700 for only a short time interval determined by the synchronization of modulation assemblv 300 and modula¬ tion device 304 The synchronization of modulation assembly 300 and modulation device 304 ensures that ra¬ diation from ILS laser 500 is sampled over a well-defined time interval (t-.) The time interval between when the output of the pump laser 100 is not interrupted by the modulation assemblv 300 and when modulator 304 opens is determined by t g The generation time. tg. can be vaned without the use of modulator 304 bv puising the output of the pumping source 100 (e g . semiconductor diode laser 914) As descnbed above, pulsing conesponds to causing the pump radiation to alternate between zero intensity and a non-zero intensity value (vv hich is not necessanlv fixed) over a duty cycle which may be vaned thereby bπnging the ILS laser 500 (I e . ion-doped crvstal 507) al¬ tematelv below and above (or at) threshold Accordingly, the ILS laser 500 is turned off and on The duration over which the ILS laser 500 lases may be vaned by changing the duty evele of the pump beam, in particular, the duration over which the pumping source 100 pumps the ILS laser to about threshold Accordingly, the genera¬ tion time (t g ), l e . the time penod over which intracavity mode competition within ILS laser 500 is permitted to occur, is vaned In this case, the detector assemblv 700 remains continuously activated and the output beam of the ILS laser 500 which exits laser cavity 902 is allowed to continuouslv reach the spectrometer assembly 600 and detector assembly As descπbed above, however, the total optical pumping energy or integrated intensity delivered by the pumping source 100 to the ILS laser 500 dunng each penod of modulation must remain constant, even though the duration over which the of the ILS laser outputs light changes To maintain a constant total optical pumping energy, the intensity level of the pump beam is adjusted with each different peπod of modulation over which t g is vaned Accordingly, both the intensity of the pump beam, and duration over which the pumping source 100 pumps the ILS laser 500 to threshold, are changed to provide different generation times Pulsing the output of the pumping source 100. e.g , semiconductor diode laser 914. can be achieved by externally controlling the transmission of the pump beam with a "pulser". Altematively. the output intensity of semiconductor diode laser 914 (pumping source 100) may be modulated by varying the electπcal power supplied to the semiconductor diode laser As descnbed above, the electneal power supplied to the semiconductor diode laser 914 can be modulated to alternately obtain voltages just above and below that reqmred to cause the ion- doped crystal 507 to lase Accordingly, the gas detection system 10 of the present invention may include any of the following configurations each of which enables the generation time to be vaned (1) The ouφut of the pumping source 100 may be chopped with an external chopper (e g . modulation assembly 300) and the detector 700 may be continuously activated with transmission of the output from the ELS laser 500 to the detector being controlled by a pulser (e g , modulator 304) to enable penodicallv sampling, (2) The output of the pumping source 100 may be chopped with an external chopper (e g.. modulation assembly 300) and the detector 700 may be pulsed on and off to enable penodicallv sampling of the output from the ELS laser 500, (3) In the case where the pumping source 100 is a semiconductor diode laser 914. the output of the semiconductor diode laser may be pulsed by varying the electncal power supplied to the semiconductor diode laser and the detector 700 may be continuously activated with the duration of the interaction between the output ofthe ILS laser 500 and the gaseous species being controlled bv the duration of the pulses from the semiconduc- tor diode laser which cause the ILS laser to lase. (4) The output of the pumping source 100 may be pulsed with an extemal pulser (e g , modulation as¬ sembly 300) and the detector 700 may be continuously activated with the duration of the interaction between the output of the ILS laser 500 and the gaseous species being controlled by the duration of the pulses from the pumping source which cause the ILS laser to lase. (5) In the case where the pumping source 100 is a semiconductor diode laser 914. the output of the semiconductor diode laser may be chopped by varying the electπcal power supplied to the semiconductor diode laser and the detector 700 may be continuously activated with the transmission of the output from the ILS laser 500 to the detector being controlled by a pulser (e g , modulator 304) to enable periodically sampling, and (6) In the case where the pumping source 100 is a semiconductor diode laser 914. the output of the semiconductor diode laser may be chopped by varying the electncal power supplied to the semiconductor diode laser and the detector 700 may be pulsed on and off to enable penodicallv sampling of the output from the ILS laser 500 As shown in FIG 7. minor 930 and minor 932 steer beam G to diffraction gratings 607 and 609 of the spectrometer assembly 600 Lenses 603 and 605 are employed to expand beam G pπor to incidence on the dif- fraction gratings 607 and 609 Lens 611 focuses the output of the spectrometer assembly 600 onto a multichan¬ nel array detector 701 which is connected to a computer 802 The spectrometer assembly 600 is operated in conjunction with the multichannel (i.e.. multiwavelength) detector 701 thereby enabling the measurement of the spectral signature ofthe gaseous species in the laser cavity 902 Alternatively, the output ofthe ILS laser 500 (beam G) having passed through the gaseous species to be momtored can be directed to a spectrometer assembly 600 having at least one dispersive optical element (e.g . diffraction gratings 607 and 609) therein which can be scanned with respect to wavelength The ouφut of the spectrometer assembly 600 can then be directed to a single channel detector The spectral signature of the gase¬ ous species in the laser cavity 902 is obtained by scanning the dispersive optical element while the light transmit- ted through the spectrometer assembly 600 passes through an appropnate aperture (e g . slit) placed m front of the single channel deteαor The intensity of the light transmitted through the spectrometer assembly 600, I e , the ouφut ofthe spectrometer assembly, is recorded as the dispersive optical element is scanned The concentration of the gaseous species can be determined from the intensm of the absoφtion fea- ture(s) found in the speαral signature It will be appreciated that the absoφtion feature(s) found in the spectral signature must be calibrated Since intracavity laser spectroscopy offers increased sensitivity beyond pπor art methods, weak transitions previously not measured may become measurable for the first time with the gas detec¬ tion system 10 of the present invention In such cases, these weak transitions can be used to identify the spectral signature and certify the presence of the gaseous species Such weak transitions can also be calibrated by the gas detection system 10 thereby enabling the concentration of the gaseous species to be determined by the intensity ofthe absoφtion feature(s) conesponding to these weak transitions In accordance with an aspect of the present invention, absoφtion data for water vapor recorded by the gas detection system 10 of the present invention is presented in FIG 8 The spectral signature for water was ob¬ tained using an ILS laser 500 compnsmg an ion-doped crvstal 507 made of Tm 3 . Tb *3 YLF which was optically excited with a semiconductor diode laser 14 The gas detection system 10 employed to obtain the absoφtion data was similar to that shown schematically in FIG 7 except that a modulator 926 was not emploved Rather, the electncal power to the semiconductor diode laser 914 was modulated instead FIG 8 shows a plot cone¬ sponding to the spectral signature of water for the spectral region between 1450 to 1455 nanometers in wave¬ length Water absoφtion lines at 1452 5 and 1452 1 nanometers are indicated bv arrows 932 and 934 respec- tively It will be appreciated that the output from the ILS laser 500 (beam G) can alternatively be transmitted via an optical fiber link to a remote site for spectral analysis In particular, beam G can be coupled into an opti¬ cal fiber or an optical fiber bundle The output of the ILS laser 500. after having passed through the gaseous species, is thereby earned to the spectrometer assembly 600 which is located at the remote site Under the proper conditions, it has been demonstrated that such optical fiber transmission does not distort the spectral data Table 2 summanzes a vaπety of configurations of the gas detection svstem 10 of the present invention Each configuration conesponds to a separate embodiment of the present invention The design parameters which can be vaned that are listed in Table 2 include the following (1) The modulation may compπse a chopper, a pulser. or modulator extemal to the pumping source 100 or modulation of the electnc power to e g . a semiconductor diode laser 914 which serves as the pumping source 100, (2) The gas sample may be confined to a separate sample system 400A or may be confined to the cham¬ ber (or housing) 400. (3) The ouφut from the ILS laser 500 can be transmitted directly to the spectrometer assembly 600 or can be coupled into an optical fiber and earned to the spectrometer assemblv. and (4) The spectral signature of the gaseous species can be obtained by using a fixed wavelength spec¬ trometer and a multichannel detector 701 or by using a scanned wavelength spectrometer and a single channel detector TABLE 2: SUMMARY OF VARIOUS CONFIGURATIONS OF THE GAS DETECTION SYSTEM OF THE PRESENT INVENTION Modulation Sample Cell Optical Connection Spectrometer/Detector None (1) Intracavity cell with sealed ( 1 ) Direct or use mirrors to ( 1 ) Fixed wavelength spectrometer and windows direct beam multichannel detector OR OR OR (2) Housing only (2) Fiber-optic coupler (2) Scanned wavelength spectrometer and single channel detector Chopper, pulser, or modulator (1) Intracavity cell wil ( 1 ) DirccI or use mirrors to ( 1 ) Fixed wavelength spectrometer and (located between pumping sealed windows direct beam multichannel detector source and ILS laser) OR OR OR to 00 (2) Housing only (2) Fiber-oplic coupler (2) Scanned wavelength spectrometer and single channel detector Electronic modulation of diode (I) Intracavity cell with ( I ) Direct or use mirrors to ( 1 ) Fixed wavelength spectrometer and laser power above and below sealed windows direct beam multichannel detector threshold OR OR OR (2) Housing only (2) Fiber-optic coupler (2) Scanned wavelength spectrometer and single channel detector Additionally, a modulator 304 may control the transmission of the output of the ILS laser 500 to the spectrometer assembly 600 and the detector assembly 700 or the detector may be switched on and off rather than employing modulator 304 Alternatively, the detector assembly 700 may be continuously activated without the use of modulator 304 by pulsing the output ofthe pumping source 100 Advantageously, diode laser pumping can be employed to provide optical excitation for a vaπety of dif¬ ferent types of ion-doped crystals 507. each having different composiuons. see, e g , Table 1 Consequently, the gas detection system 10 of the present invenuon can be used to detect a broad vaπety of gaseous species (I e . molecules, atoms, radicals, and/or ions) having absoφtion features at widely varying wavelengths FIG 9 lists a limited number of ion-doped crystals 507 which are presently available that can be opti- cally excited using a semiconductor diode laser 914 and their respective tumng ranges which reside in the wavelength range between about 1000 to 3000 nanometers Ion-doped crystals 507 listed which lase in continu¬ ous (CW) mode at room temperature include the following Yb 3+ YAG. Cr Forsteπte. Cr 4 " YAG, Tm Tb YLF, ErYb.Glass. Tm 3+ YAG YSGG. Tm 3+ YLF. and Er 3+ YLF Additionally . an ion-doped crystal 507 compnsmg C0 2 'MgF 2 can operate in continuous mode when crvogemcally cooled while an ion-doped crvstal compns g Cr 2+ ZnSe can operate at room temperature in pulsed mode (It will be appreciated that the potential tumng range of Cr 2+ ZnS/ZnSe/ZnTe is shown in FIG 9 ) FIG 9 additionally shows the near infrared spectral absoφtion of a some gaseous species (It will be appreciated that the ranges in wavelength of the spectral absoφtion for H ; 0 ; , CO. SO;. CK-, and NO are calcu¬ lated overtones ) Accordingly. FIG 9 indicates some examples of the gaseous species that can be probed using an ELS laser 500 compnsmg an ion-doped crystal 507 which is optically pumped with a semiconductor laser di¬ ode 914 In accordance with an aspect of the present invention, the semiconductor diode laser 914 which may be employed as the source of optical pumping is operated electncallv Consequently, the diode laser pump laser 100 is relatively small and compact in companson to other sources of optical pumping Additionally, given the low optical pumping energies required for diode laser pumping, the thermal management of the ILS laser 500 is less difficult than for gas detection svstems 10 shown in pπor art Also, the cost is reduced and the operation is simplified in contrast to many gas detection systems 10 shown in pπor aπ Advantageously, the linear laser cavity 902 of the present invention includes fewer optical elements than designs based on laser cavities defined by three mirrors Accordingly, the complexity of the external cavity is reduced thereby increasing mechanical stability (I e . ruggedness), as well as lowenng the cost of the gas de¬ tection system 10 The small/compact size ofthe diode laser pump laser 100 and the linear laser cavity 902 makes the gas detection systems 10 constructed therewith amenable to a broad vaπety of practical applications Specifically, the compactness the gas detection system of the present invention which includes a diode laser pump laser 100 or a linear laser cavity 902 can be directed to a completely distinct set of applications in gas detection In particular, the gas detection system 10 which utilizes the diode laser pump laser 100 for opucal excitation of the ILS laser 500 is expected to find application in semiconductor manufactuπng. process control, environmental momtonng. air quality and safety certification, health and safety certification, nuclear energy production, and medical diag¬ nostics In accordance with the apparatus and method of the present invention, the output signal (beam G) from the ILS laser 500 is detected and analyzed to identify the gaseous species (via its spectral signature) and to de- termine its concentration Those skilled in the art will appreciate that the detection levels available through practice of the present invention generally exceed those which are obtainable through use of conventional de¬ vices Moreover, gas detection system 10 can be used in-line and obtain ready, near real-time measurement of the presence and amount of the contaminant contained in a specific sample, thus addressing the many disadvan¬ tages associated with the use of such conventional devices In particular, the method of the present invention provides rapid, in situ detection of gaseous species within gas samples at detection levels which are not available in pπor art It should be understood that the foregoing descnption relates to preferred exemplary embodiments of the mvenuon. and that the invention is not limited to the specific forms shown herein Vaπous modifications may be made in the design and anangement of the elements set forth herein without departing from the scope of the vention as expressed in the appended claims Moreover, the application of gas detection svstem 10 as well as the location ofthe ILS gas detector, e g . in a semiconductor fabrication assemblv. can van as mav be desired For example, the specific placement of the vaπous elements within the ILS chamber 400 and gas detector svstem 10 itself may be modified so long as their configuration and placement suitably enables optical excitation of ILS laser 500 in a readily reproducible manner These and other modifications in the design, arrangement, and ap¬ plication of the present invention as now known or hereafter devised bv those skilled in the art arc contemplated bv the amended claims

Claims: CLAIMS What Is Claimed Is 1 A gas detection system (10) for detecting the presence of gaseous species in a gas sample compns¬ mg' (a) a laser cavity (902), (b) an ion-doped crystal (507) therein having two ends. (c) a semiconductor diode laser (914) located outside said laser cavity (902) which has an out- put which optically excites said ion-doped crvstal (507). thereby producing an output beam which exits said laser cavity (902). (d) beam shaping optics (200) located outside said laser cavitv (902) which shapes said output of said semiconductor diode laser (914). and (e) a container (400 406) for holding said gas sample in said laser cavity (902). said output beam of said ion-doped crvstal (507) passing through said gas sample pπor to exiting said laser cav ity (902) 2 The gas detection svstem (10) of Claim 1 wherein said output beam of said ion-doped crystal (507) after exiting said laser cavity (902) is directed to either (a) a spectrometer (600) fixed in wavelength and a multi¬ channel detector (701) or (b) a spectrometer (600) scanned in wavelength and a single channel detector 3 The gas detection system (10) of Claim 1 wherein said ion-doped crystal (507) compnses a mateπal selected from the group consisting of Cr Tm Ho YAG. Cr 4 " YSO. Cr 4 " YAG. Cr 4+ YSAG. Er GSGG. Er 3 " YLF. Er 3 " Yb 3 " glass. Ho 3 " YSGG. Ho 3 " Tm 3" LUAG. Tm 3 " Ho 3 " YLF. Tm 3 " Ho 3 " YAG. Tm 3 " Ca Y SOAP. Tm 3 " YLF. Tm 3 " Tb 3 " YLF. Tm 3 " glass. Tm 3 " Ca La SOAP. Tm 3 " YOS. Tm 3 " YSGG. Tm 3 " YAG. Yb 3 " YAG. CrForstente. Er Yb Glass. CO : MgF : . Cr" ZnSe. and Cr" ZnS/ZnSe/ZnTe 4 A method for detecting the presence of gaseous species in a gas sample using the gas detection sys¬ tem (10) of Claim 1. said method compnsing the steps of (a) directing the output beam of said diode laser pump laser (100) to said ion-doped crystal (507), and (b) directing said ouφut beam from said ion-doped crystal (507) after exiting said laser cavity (902) to a detector assembly (700) for determimng the presence and/or concentration of gaseous species in said gas sample 5 The method of Claim 4 wherein said ouφut of said semiconductor laser diode (914) is penodicallv switched between intensity levels thereby causing said ouφut beam of said ion-doped crystal (507) to be alter¬ nately switched on and off 6. The method of Claim 5 wherein said output of said semiconductor laser diode (914) is penodicallv switched using a technique selected from the group consisting of chopping, pulsing thereby causing said ouφut of said semiconductor laser diode (914) to alternate between zero intensity and a non-zero intensity value over a duty cycle which may be vaned. modulating, and varying electπcal power supplied to said semiconductor diode laser (914) 7 The method of Claim 5 wherein said output beam which exits said laser cavity (902) is alternately prevented from reaching said detector assembly (700) or said detector (701) is penodicallv switched on and off 8 A gas detection system (10) for detecting the presence of gaseous species in a gas sample compns¬ mg (a) a linear laser cavity (902) formed between a first mirror (908) and a second minor (910). (b) an ion-doped crvstal (507) inside said linear laser cavity (902). (c) a pumping source (100) located outside said linear laser cavity (902) which has an output which optically excites said ion-doped crvstal (507), thereby producing an output beam which exits said linear laser cavity (902). and (d) a container (400. 406) for confining said gas sample in said linear laser cavity (902). said output beam of said ion-doped crvstal (507) passing through said gas sample pπor to exiting said linear laser cavity (902) 9 The gas detection system (10) of Claim 8 wherein said pumping source (100) is selected from the group consisting of a gas laser, a solid-state crystal laser, a semiconductor laser diode (914). and at least one flash pump 10 The gas detection system (10) of Claim 9 wherein said linear laser cavitv (902) includes at least one additional planar mirror inserted between said first minor (908) and said second minor (910) for beam steeπng 11 The gas detection system (10) of Claim 8 wherein said ion-doped crystal (507) is longitudinally pumped or transversely pumped 12. A method for detecting the presence of gaseous species in a gas sample using the gas detection sys¬ tem (10) of Claim 8. said method compnsing the steps of (a) directing the output beam of said pumping source (100) to said ion-doped crvstal (507). and (b) directing said output beam from said ion-doped crystal (507) after exiting said linear laser cavity (902) to a detector assembly (700) for determimng the presence and/or concentration of gaseous species in said gas sample

Inventors: ATKINSON GEORGE H, HINEMAN MAX, KALISKY YEHOSHUA, MEHDIZADEH ESMAIL, WOLPERDINGER MARKUS, ZHANG JIAMIN, ATKINSON, GEORGE, H., HINEMAN, MAX, KALISKY, YEHOSHUA, MEHDIZADEH, ESMAIL, WOLPERDINGER, MARKUS, ZHANG, JIAMIN
Applicants: INNOVATIVE LASERS CORP, INNOVATIVE LASERS CORPORATION
Application year: 1996
Main classification: G01N21
IPC codes: G01N21, H01S5