NEAR-FIELD RESISTIVITY MICROSCOPE

Abstract: A microwave microscope comprising a microwave waveguide having a probe end positioned closely above the surface to probed such that the surface is in the near field of the microwave radiation. The end of the probe facing the surface is covered with a metallic foil or a conducting film deposited over a dielectric layer and having a rectangular slit formed therein. The long dimension of the slit is nearly resonant with the microwave, that is, just slightly longer than one-half of the microwave wavelength. The short dimension is substantially shorter than long dimension and is chosen such that the slitted end is transparent to the microwave. Thereby, substantial microwave power is emitted through the slit with fine resolution that is determined by the short dimension of the slit. The probe is scanned across the surface in the direction of the short slit dimension, and its resolution is approximately equal to the short slit dimension. Preferably, the end is convexly curved along the direction of the long slit dimension so that only a portion of the slit is in the near field, thereby reducing the effective lateral dimension.

Description: Near-Field Resistivity Microscope Field of the Invention The invention generally relates to electrical measuring equipment and methods. In particular, the invention relates to microwave equipment and methods for mapping resistivity and other electrical characteristics over a surface with resolution ofa few micrometers, that is, a microwave microscope. Background of the Invention It is often desired to map electrical resistivity over a surface and to do so with fine resolution. In particular, the microelectronics industry requires that the uniformity of electrical properties of semiconducting wafers of silicon, gallium arsenide, and other semiconductors and of conducting polymers be tightly controlled in order to achieve acceptable yield of integrated circuit dies over a large wafer. It is common to map the resistivity of the wafers in order to monitor wafer uniformity both before processing and after ion implantation or layer growth. Heretofore, resistivity mapping has been typically performed with a movable probe and point contacts mechanically pressed against the wafer to thereby map tlie DC resistivity using two-point or four-point probes. This method is limited to resolution in tl e neighborhood of 50 to lOOμm, and the method further suffers from the direct mechanical contact between the probe and wafer, which presents the danger of damaging the wafer or probe. Several contactless methods have been developed to avoid the damage problem. In eddy-current testing, a miniature coil is scanned at a fixed height above the surface, and the coil is part of a sensitive inductive bridge. Variations of resistivity in the surface underlying the coil unbalance the bridge, and the bridge output thus maps the resistivity. Although the method is quite powerful, its resolution is limited to dimensions ofthe order of 1mm, the mimmum size of the coil. Yet smaller coils suffer from significantly decreased inductance. Several methods can map resistivity with nanometer resolution. One example is a capacitance microscope in which a sharp needle is scanned over the conducting surface, and the capacitance between the needle and the surface is measured. The capacitance disappears for a non-conducting surface. However, the capacitance microscope is insensitive to finer gradations of resistivity. Scanning tunneling microscopes can also map resistivity with nanometer resolution, but they have not been applied to the large-sized areas desired for wafer inspection. Several microwave methods have been used to map resistivity. These methods rely on the fact that the reflection or transmission of electromagnetic waves at a conducting surface is determined by the resistivity (p=l/σ) and dielectric constant e ofthe surface material, which can be combined into a complex conductivity (σ-iea 4π). Therefore, a microwave beam is scanned across the surface, and the intensity ofthe reflected or transmitted microwave radiation is measured, to thereby provide a resistivity map. Most of these methods focus the microwave beam on a small spot and collect the reflected or transmitted beam with a horn antenna. That is, tliese are far-field techniques whose resolutions are limited to about the wavelength of radiation, that is, ofthe order of 1mm at 94GHz. Microwave components are not generally available above this frequency. Also, electrical characteristics in the sub- millimeter range may bear little relationship to the electrical characteristics at much lower frequencies or DC. Otiier techniques use an open waveguide or a parallel-plate antenna, which are actually near-field probes but do not have high spatial resolution. Nonetheless, microwave measurement techniques have achieved much finer resolution using the methods of near-field microscopy. Ash et al. disclosed near-field microwave microscopy in "Super-resolution Aperture Scanning Microscope," Nature, vol. 237, pp. 510-512, 1972. They used an aperture of 1.5mm diameter in a 10GHz (λ=3cm) microwave guide to achieve a spatial resolution of λ/60. They argued that a similar arrangement with 8mm microwaves and very small apertures would enable resolution of tens of microns. We believe that further improvements in resolution beyond those reported using this design are not practical. Very small apertures transmit very little power since they are below cut-off. Transmitted power through a very small aperture may be increased if this aperture is included within a high-Q resonator; however, a resonator severely limits bandwidth and is inappropriate for time-domain studies, which are important for measuring local lifetimes. The lifetime is determined from the change of conductivity upon illumination by a short laser pulse. A resonator, which has an inherently slow time response, is not good for monitoring short time responses. A coaxial cable may be used to probe a surface in tlie near field, as has been disclosed by Bryant et al. in "Noncontact Technique for the Local Measurement of Semiconductor Resistivity," Review of Scientific Instruments, vol. 36, pp. 1614-1617, 1965. Recently, this technique has been extended to smaller resolutions with miniature coaxial cable. A microstrip resonator with a small antenna can be scanned over the surface, as has been described by Keilman in U.S. Patent 4,994,818. Merz et al. provide a similar disclosure in Physical Review Letters, vol. 40, 1993, pp. 651-653. The antenna couples either inductively or capacitively to the underlying surface. This technique has been described by Tabib-Azar et al., "Nondestructive characterization of materials by evanescent microwaves," Measurement Science Technology, vol. 4, pp. 583-590, 1993. A scanned microstrip resonator can be used to map mobility with a resolution of several millimeters, as has been disclosed by Druon et al., "Novel microwave device for nondestructive electrical characterization of semiconducting layers," Review of Scientific Instruments, vol. 61, 3431-3434, 1990. Summary ofthe Invention Accordingly, an object ofthe invention is to provide apparatus and method for mapping resistivity ofa surface with resolution in the range of lOμm to several centimeters. A further object of the invention is to provide a contactless method of mapping electrical characteristics of a surface. The invention can be summarized as a near-field microwave microscope and its metiiod of use in which a rectangular or other microwave waveguide includes a resonant slit aperture having a long dimension that is resonant with the microwaves and also having a short dimension that is substantially smaller and which determines the resolution. The slit aperture is scanned over the surface, and tl e microwave radiation is measured either in reflection or transmission to map an electrical parameter of tl e material, in particular, the electrical resistivity. Brief Description ofthe Drawings FIG. 1 is a perspective view of a microwave waveguide and a resonant slit which form one embodiment ofa probe ofthe invention. FIG. 2 is a perspective view of another embodiment of a probe utilizing a curved slit. FIGS. 3 and 4 are cross-sectional view ofthe probe of FIG. 2 taken along respective sectional lines 3-3 and 4-4. FIG. 5 is a cross-section view corresponding to FIG. 3 and showing an additional element. FIGS. 6 and 7 are schematic illustrations of two embodiments ofthe microscope of the invention using different electronics. Detailed Description ofthe Preferred Embodiments A first embodiment ofthe invention relies upon a microwave probe 10 illustrated in perspective in FIG. 1. A rectangular microwave waveguide includes two side walls 14 of width a and two narrow side walls 16 of width b, all of which are highly conductive so as to support microwaves within the rectangular cavity defined by the side walls 14 and 16. The wall dimensions are chosen to support microwaves within a predetermined frequency or wavelength band. For a given microwave wavelength XQ, there is set of minimum dimensions lower than which the microwave radiation is not supported by the waveguide, and, as a result, the radiation quickly attenuates within the waveguide. There are no maximum dimensions, but the microwave radiation propagates with excessive loss when tlie waveguide size is substantially larger than the microwave wavelength. It is, however, emphasized that a circular or other cross-sectional waveguide will also propagate microwaves and thus be usable with tlie invention. A conductive foil end wall 18 is joined to the waveguide 12 at its probe end and includes a centrally located slit aperture 20 having a long dimension a 'along the long waveguide side 14 and a short dimension b 'along the short waveguide side 16. Instead ofthe conductive foil, a fairly thick dielectric wall 18 can be used on which is coated a thin conductive coating. The conductive coating may be deposited on either the inside or the outside ofthe dielectric wall, and the apeiture 20 may be formed in tl e conductive coating by chemical etching or laser ablation. Assume for now that the waveguide interior is not dielectrically loaded so that tlie microwave wavelengtii λ is the free-space value λ o = γ (1) where c is the speed of light in free space and/is the microwave frequency. The slit length a ' is chosen to be approximately half the free-space wavelength λg The reflection and transmission of electromagnetic waves through such a slit 20 is related to the slit's impedance Z s , which is given approximately by where Z 0 is the impedance of free space, which is 377Ω. This equation shows that there is a cut-off wavelength K = 2α', (3) above which the radiation cannot penetrate the slit 20. Equation (2) should be considered to only approximately apply to the propagation of electromagnetic radiation in tlie invention, but it illustrates important limits ofthe operation ofthe invention. Near cut-off, even for arbitrarily small slit widths b ', the slit impedance Z s can be made equal to the free-space impedance Z„ so as to guarantee high transmission. It is further known that for a slit aperture separating two portions of waveguide, if the dimensions ofthe slit and waveguide are such as to satisfy the condition then the slit 20 and end plate 18 are transparent at this wavelength λ. This condition has been described by Moreno in Microwave transmission design data (Dover, New York, 1958), p. 158. Equation (4) demonstrates that as a 'approaches 2λ from above, that is, approaches cutoff, the slit's narrow dimension b ' can be made very small to the limit ofa few micrometers. The minimum size ofthe slit is limited by the skin depth, approximately 0.2μm in copper at 100GHz. Therefore, even a very narrow slit is transparent at microwave wavelengths just below λ c . Although the transparency of Equation (4) strictly applies to an apertured barrier rather than for the slot-antenna of FIG. 1, we expect that such transparency is available for slot antennas. The length a 'ofthe slit 20 is restrained to be near λ/2, which at 100GHz is 1.5mm. This length in the embodiment ofthe probe of FIG. 1 substantially determines the lateral resolution. However, the lateral resolution can be improved in the microwave probe 30 illustrated in perspective in FIG. 2 and in peφendicular lateral cross-sections in FIGS. 3 and 4. The probe end of the waveguide 12 is convexly curved, and a thin conductive foil 32 is attached to the curved end such that its slit 34 is also curved in its long direction. As shown in the cross section of FIG. 5, a low-loss dielectric body 35 placed in the end ofthe probe supports the thin foil 32 on a curved front surface, and its triangularly shaped rear side minimizes microwave reflection. As illustrated in FIG. 4, the probe 12 is then scanned in the short dimension of the slit 20 at a fixed small distance above the surface 36 of a material being electrically characterized. The small resolution is closely related to tlie slit width b 'as illustrated in FIG. 3. The larger resolution is less than the slit width a 'because the curvature ofthe end foil 32 puts only a smaller central portion of tlie slit near the probed surface 36. The side portions of the slit 34 are too far away to conform with the requirements of the surface 36 being within tl e near field of the slit 34. The tip of the probe is typically kept at a constant height above the probed surface of a few micrometers so as to maintain the probed surface within the near field. If the resonant slit is placed very close to a conducting surface, the reflection or transmission coefficient, depending upon the mode of operation, depends strongly on the resistivity in the small region under the probe. Measuring the amplitude and phase of the reflected or transmitted wave while scanning the surface yields a one-dimensional profile of the resistivity in die microwave range. Scanning along different directions and using deconvolution techniques yield a two-dimensional map ofthe resistivity. Such deconvolution techniques are described by Dahm et al. in "ESA imaging study ofthe spin distribution in ladder-type polymer films containing spatially selective conducting patterns," Polymers for Advanced Technologies, vol. 1, pp. 247-252, 1990. If the thickness ofthe scanned surface is known, both die resistivity and dielectric constant can be mapped to thereby provide coherent imaging ofa surface. Such imaging is accomplished by simultaneously measuring both amplitude and phase ofthe reflected or transmitted microwave radiation relative to the incident microwave radiation as the sample is canned past the microwave microscope. The resolution ofthe microscope in the direction peφendicular to tlie slit is determined by the width ofthe slit and by the skin depth ofthe material in which the slit is cut. The slit may formed in a metallic layer deposited ofa metal material, such as aluminum, to a thickness of about lμm, and then subsequently defined by chemical lithography or laser definition. Alternatively, tlie slit can be cut in aluminum, copper, or nickel foil having a thickness of 10 to 20μm. A lOμm-wide and 1 to 2mm-long slit can be formed by electroforming or cutting with a Nd-YAG laser. Narrower slits can be formed, but there is no need for a slit of less than lμm because the skin depth of copper is 0.2μm at 100GHz. Thus, the ultimate resolution for scanning in a direction peφendicular to the slit is on the order of a few micrometers at 100GHz. The resolution for scanning a direction parallel to tlie slit is determined by the field pattern in the slit and by the curvature ofthe probe tip. We expect this resolution, without deconvolution, to be less than 1mm. The range of conductivities that may be probed is determined by the fact that the sensitivity to variations ofthe conductivity at a given frequency is highest when the size of the probe is ofthe same order of magnitude as the skin depth ofthe tested material. Hence, tlie optimal range for millimeter waves lies witiiin IO "2 to 10 +2 Ω " 'cm " '. This range is of great interest for semiconducting wafers and conducting polymers. A working embodiment of a microwave microscope 50 of the invention, schematically illustrated in FIG. 6, uses the curved probe 30 of FIGS. 2-4 and works in the reflection mode. The slit is cut into 20μm-thick aluminum foil, has dimensions of 1.5mm by lOOμm, and transmits at 80GHz. The tested material 38, for example, a semiconductor wafer, is mounted on a movable X-Y stage 52 through an intermediate thick glass plate 54. A source of millimeter wave microwave radiation 56 , for example, an HP 83558A microwave generator, provides the probing microwaves. An E-band millimeter-wave bridge is formed ofa hybrid tee 58, an adjustable attenuator 60, a sliding short 62, and an E-H tuner that matches the impedance of the slit antenna to that ofthe waveguide. A microwave detector 66 receives radiation from the bridge to thereby measure its imbalance, and the intensity is transmitted to a computer 68, which is also controlling a driver 70 scanning the X-Y stage 52 in a 2-dimensional scan. The detector may be a Millitech DXP-12 crystal detector. To increase sensitivity, a signal generator modulates the amplitude ofthe millimeter- wave source 56 and serves as a synchronizing signal for a lock- in amplifier, such as a SR830-DSP, receiving the output ofthe detector 66. The sensitivity can be further increased and phase may be measured by shifting the operating point ofthe detector 66 by varying the attenuator 60 and the sliding short 62. The computer 68 outputs the detector signal registered with the X-Y position ofthe wafer 38. If the bias signal is in phase with the reflected signal, the detector voltage is sensitive to variations ofthe amplitude ofthe reflected signal, but, if the bias signal is in quadrature with the reflected signal, then tlie detector voltage is sensitive to phase variations. The amplitude gives information about tlie resistivity while the phase yields information about the dielectric constant. Tabib-Azar et al., ibid., give a more complete discussion of measuring both parameters. In operation, first, the slit is directed to open space, the attenuator 60 is put to maximum attenuation, and the E-H tuner is varied to balance the bridge in order to match the impedance ofthe slit. Tlien, the sample 38 is mounted onto the X-Y stage while the stage 54 moves the sample 38 beneath the probe 30 with a constant separation ofa few micrometers. This setup was used at 80GHz to image a section of a test pattern by scanning the probe across the test pattem. No deconvolution was used. As expected, the best resolution was obtained in the direction ofthe short dimension ofthe slit. The best imaging of a 2- dimensional pattern was obtained by scanning in a direction non-orthogonal to principal peφendicular features. The experiment showed that a lOOμm-wide probe well resolves five line pairs per millimeter (line widths of lOOμm) and reasonably resolves eight line pairs per millimeter (line widths of 70μm). Therefore, the spatial resolution of the microscope is determined by tlie slit width and not by the wavelength. The embodiment of FIG. 6 operated in tlie reflection mode. A microwave microscope 70 ofthe invention operating in the transmission mode is schematically illustrated in FIG. 7. The radiation from the millimeter- wave source 56 is split at a first tee 72 into coherent radiation for a test signal and for a reference signal. The test signal is delivered through the probe 30 to the sample 38, which is cantilevered over a central aperture 72 ofthe X-Y stage 52. The slit 34 of the probe is positioned a few micrometers over the sample 38, and the sample 38 is relatively thin in order to satisfy the near-field conditions. However, it is pointed out that, if the sample is thick but any variations occur relatively close to the surface, the surface area will give the greatest contrast while the bulk will produce a much smoother background. A horn antenna 76 receives microwave radiation transmitted through the sample 38. Preferably, this transmitted portion is modulated by a modulator 78 before it is recombined with the reference signal in a second tee 80. A phase shifter 82 may be used to phase sluft the reference signal either to maximize tl e signal or to provide a complex dielectric constant of the sample 38. The detector 66 detects the combined signals, preferably as phase locked with the modulator 78, and its output is compared by tlie computer 68 with the X-Y position ofthe sample 38 controlled by the driver 70 to thereby provide an X-Y map ofthe electrical parameters ofthe sample 38. If the sample is relatively thin, the near-field condition is satisfied throughout the sample. However, a relatively transparent sample can be thicker. The surface inhomogeneities are well focused while the underlying portions, which are in the far field, produce a smooth background. A somewhat similar embodiment is possible in the reflection mode if the first tee 72 is replaced by a circulator an two tees pass a reference signal, possibly as adjusted by a phase shifter, around the circulator. There are other microwave circuits that can be used to measure the amplitude or phase of signals in either the reflection or transmission mode. The embodiments of FIGS. 6 and 7 are intended to demonstrate the variety of measuring circuits and not, in any way, to limit what circuits can be used with the invention. Although the embodiments described above use a rectangular waveguide, the invention can be implemented using a circular waveguide with a resonant rectangular slit at its end. The invention can be applied to a number of advantageous uses. As mentioned before, the microwave microscope can be advantageously applied to testing conducting polymer films. In these films, high conductivity is usually achieved by doping, which unfortunately leads to inhomogeneities in the conductivity. The inventive microwave microscope provides the abilities to study dopant diffusion and doping mechanisms. Previously, photoresistiviy (that is, the inverse of photoconductivity) was measured using local illumination using an optical fiber and non-local microwave measurement. With the invention, the sample can be locally or broadly illuminated with optical radiation and locally probed with millimeter waves. Thermal-wave imaging is a well established technique. A laser beam is amplitude- modulated and locally heats a surface while a second beam probes the reflectivity in a nearby spot. Measuring the amplitude and phase ofthe reflected beam yields information about thermal conductivity, depth, and absoφtion coefficient ofthe substrate. The present invention allows either very localized heating ofthe substrate with millimeter waves or micrometer-sized probing of tlie resultant heating. Further, the microwave probe yields somewhat different information from the optical-wavelength thermal probing commonly used. Further, the microwave probe frequency may be tuned to some particular absoφtion transition so as to map a local chemical distribution. The invention can be advantageously used to check electronic circuits, for example, to test the quality of soldering and uniformity of leads. The invention provides advantages over previous contact methods in that the resistivity may be measured in a final product through a protective polymer coating since the polymer coating has significantly different microwave properties from the underlying circuit and generally less affects the microwaves. Similarly, the microwave microscope ofthe invention can be advantageously applied to characterizing buried interfaces, particularly conductive layers or patterns coated by more electrically insulative layers, especially protective layers. Although the thickness ofthe overlayer is not fundamentally limited, a thick overlayer will degrade the spatial resolution as tl e interface falls more into the far field ofthe microwave radiation. A thickness of several micrometers of an insulative overlayer should allow adequate resolution ofthe conductive underlayer or interface. In more general terms, the overlayer thickness should be limited to not substantially more than λ/10 to retain the underlayer in the near field, where λ is the free- space microwave wavelength λ 0 reduced to account for the dielectric constant ofthe overlayer. Biological specimens can be advantageously imaged using the invention because the microwave radiation affords a greater contrast than does tlie more typical optical radiation. In the optical bandwidth, most materials have an refractive index in the range of 1 to 3. However, in the microwave bandwidth, the refractive index is typically equal to the DC value and so varies within the wider range of 1 to 10 (and even higher). In particular, the refractive index of water in the millimeter- wave range is very high, 3 to 9 depending on the frequency, and it differs considerably from other dielectrics, which typically have refractive indices in the range of 1 to 2. Thus, tlie invention allows high-contrast imaging of biological specimens and other objects containing water. Moreover, since the index of refraction of water in the RF band is strongly dependent on its salt concentration, tlie invention provides a method of measuring and mapping local salt concentration. The invention is particularly advantageous in imaging the local transition between liquid water and ice because the RF contrast between water and ice is much greater than is the optical contrast. The invention allows very localized radiometry of measuring the black-body radiation, that is, the temperature, of surfaces. A simple type of radiometry does not require a source of microwave radiation. Instead, a passive microwave probe and detector are scanned over the sample surface. The sample itself provides the microwave radiation in the microwave portion ofthe distribution of its black-body radiation. Any variations in the local temperature, thermal emissivity, or other localized excitation are measurable with resolutions associated with the microwave probe ofthe invention. Heretofore, thermal imaging was performed in the far field. With the invention, a probe can scan tlie surface in the near field and provide much improved resolution of tiie temperature distribution at the surface ofthe sample, for example, hot spots in an integrated circuit. The invention can be improved in a number of ways. We have observed that a simply convexly curved probe end can improve the resolution by a factor ofthree. Oilier convex shapes can be used with the invention and may provide yet better resolution. The waveguide may be filled with a dielectric. The refractive index of many materials in the microwave and millimeter range are very high, n=3-10, in contrast to the optical wave band, in which n= 1-2. Thus, it is possible to dielectrically fill a W-band waveguide having dimension of 0.35mm><0.15mm to support microwaves in the band of 75-110GHz. Such a waveguide can be prepared by coating a dielectric ofthe appropriate dimensions. Dielectrically loading the entire probe waveguide allows a waveguide of small dimensions to be used with microwaves having relatively long free-space wavelengths. The smaller waveguide allows finer resolution. The invention may be used to combine a bright source of microwaves with an optical source and to measure an interaction between the microwave and optical radiation. The inventive intense microwave source replaces thermal imaging systems reliant upon optics. Presently, such techniques include local high-intensity imaging of semiconductors at a sufficient level to excite electron-hole pairs, which then diffuse from the illuminated spot. Another application probes the reflectivity of a neighboring spot to determine the intermediate diffusivity.

Claims: What is claimed is: 1. A microwave microscope for characterizing a surface, comprising: a source of microwave radiation; a microwave waveguide receiving said microwave radiation from said source on a first end; and a substantially rectangular aperture formed into a microwave waveguide and having a first dimension nearly resonant with said microwave radiation and having a second dimension substantially smaller than said first dimension; wherein a surface to be tested by said microscope is positioned adjacent to said aperture by a distance substantially less than said first dimension so as to be in a near field of said microwave radiation emanating from said aperture. 2. The microwave microscope of Claim 1, further comprising a stage on which said surface is mounted an which is movable relative to said waveguide. 3. The microwave microscope of Claim 2, wherein said stage is movable in two dimensions in a plane peφendicular to a propagation direction of said waveguide. 4. The microwave microscope of Claim 1 , further comprising a microwave detector for detecting microwave radiation emitted tlirough said aperture and interacting with said surface. 5. The microwave microscope of Claim 4, wherein said microwave detector is microwave coupled to said microwave waveguide, whereby said microwave microscope is operating in a reflection mode. 6. The microwave microscope of Claim 4, wherein said microwave detector is disposed on an opposite side of said surface from said aperture, whereby said microscope is operating in a transmission mode. 7. The microwave microscope of Claim 4, wherein said microwave detector additionally detects a phase of said detected radiation relative to said emitted radiation. 8. The microwave microscope of Claim 1 , wherein an end of said microwave waveguide facing said surface is curved in a direction along said first direction. 9. A microwave probe, comprising: a microwave waveguide; and a metallic end placed on said waveguide having a rectangular aperture formed therein with a first dimension nearly resonant with microwave radiation carried by said waveguide and a second dimension substantially smaller than said first dimension, wherein said end is convexly curved along said first dimension. 10. The microwave probe of Claim 9, further comprising a microwave source generating microwaves in said waveguide of wavelength λ, and wherein said first dimension is closer to λ/2 than λ. 11. The microwave probe of Claim 10, wherein said microwave waveguide is a rectangular waveguide having a short dimension a and a long dimension b, wherein said first dimension of said aperture is a' and said second dimension of said aperture is b', and wherein the following condition is approximately satisfied: 12. A metiiod of scanning a surface for its electrical characteristics, comprising tlie steps of: positioning a metallic end of a microwave probe at a height above said surface to be characterized, said microwave probe comprising a microwave waveguide being terminated in said metallic end and said metallic end having an substantially rectangular aperture formed therein having a long dimension substantially longer than said height and a short dimension substantially shorter than said long dimension; and scanning said microwave probe over said surface. 13. The method of Claim 12, further comprising measuring an intensity of microwave radiation emitted by said probe and interacting with said surface. 14. The method of Claim 13, wherein said measuring step determines at least one of the parameters of resistivity, dielectric constant, and photoconductivity of said surface. 15. The method of Claim 13 , further comprising simultaneously measuring a phase of said microwave radiation interacting with said surface relative to a phase of microwave radiation impressed into said probe by a controlled microwave generator. 16. The method of Claim 12, wherein said end of said probe is convexly curved in a direction of said long dimension. 17. The method of Claim 12, further comprising impressing microwave radiation into said waveguide. 18. The method of Claim 17, wherein said long dimension is nearly resonant with said microwave radiation. 19. The method of Claim 18, further comprising choosing dimensions of said aperture to make said end with said aperture substantially transparent to microwave radiation conveyed by said waveguide. 20. The method of Claim 12, wherein said microwave probe receives microwave radiation from said surface that is generated in a body including said surface, whereby said scanning step radiometrically scans said surface. 21. The method of Claim 12, wherein said surface includes a insulative overlayer and an underlayer of substantially higher conductivity and wherein said positioning step positions said underlayer within a near field of said aperture of said microwave waveguide. 22. The method of Claim 22, further comprising impressing microwave radiation of wavelength λ 0 into said microwave waveguide and wherein said underlayer is displaced from said aperture by no more than λ/10 from said aperture, wherein λ is a wavelengtii of said microwave radiation in said overlayer.

Inventors: DAVIDOV DAN, GOLOSOVSKY MICHAEL, DAVIDOV, DAN, GOLOSOVSKY, MICHAEL
Applicants: DAVIDOV DAN, GOLOSOVSKY MICHAEL, YISSUM RES DEV CO, DAVIDOV, DAN, GOLOSOVSKY, MICHAEL, YISSUM RESEARCH DEVELOPMENT COMPANY OF THE HEBREW
Application year: 1996
Main classification: G01R27
IPC codes: G01N22, G01R1, G01R27