Non-reduced dielectric ceramic compositions

Abstract: This invention is directed to provide a non-reduced dielectric ceramic composition, which comprises a main component comprising BaTiO3, at least one rare earth metal oxide (Re2O3) selected from the group consisting of Tb2O3, Dy2O3, Ho2O3, and Er2O3, and Co2O3, where such constituents are contained at a predetermined formulation in the main component, an sub-component comprising BaO, MnO, MgO, and at least one compound selected from the group of NiO and Al2O3, and an oxide glass mainly containing Li2O-(SiXTi1-X)O2-M wherein M represents at least one member selected from the group consisting of Al2O3 and ZrO2, wherein the main component, the sub-component, and the oxide glass are contained in described amounts. The composition is used as dielectric materials, such as monolithic ceramic capacitors, using base metals such as nickel as an internal electrode material.

Description: BACKGROUND OF THE INVENTION Field of the Invention The present invention relates to a non-reduced dielectric compositions, and in particular, used for dielectric materials, such as monolithic ceramic capacitors, using base metals, such as nickel, as an internal electrode material. Description of the Related Art Conventional dielectric ceramic materials containing BaTiO3 as a main component exhibit semiconductive properties when they are reduced by firing under a neutral or reducing, low oxygen partial pressure. Therefore, materials, for example, noble metals, such as palladium, and platinum, which do not melt at a high temperature, at which the dielectric ceramic material are sintered, and not oxidized when firing under a high oxygen partial pressure, which does not change the dielectric ceramic material to the semiconductor, must be used as the internal electrode materials. Such problems significantly have hampered the low-cost production of the monolithic ceramic capacitors. In order to solve the above problem, the use of base metals such as nickel, for example, has been required as internal electrode materials. When such base metals are used as internal electrode materials and fired under conventional conditions, the electrode materials are oxidized not to accomplish the function as the electrodes. Thus, for the use of such base metals as internal electrode materials, the dielectric ceramic material has been required, which do not change to the semiconductor even when firing under a neutral or reducing low oxygen partial pressure, and has a sufficient specific resistance and excellent dielectric characteristics as the dielectric material for the capacitor. As dielectric ceramic materials satisfying the above conditions, for example, a BaTiO3-CaZrO3-MnO-MgO composition in JP-A-62-256422, a BaTiO3-MnO-MgO-rare earth metal oxide composition in JP-A-63-103861, and a BaTiO3-(Mg, Zn, Sr, Ca)O+Li2O-SiO2-MO (wherein MO represents BaO, SrO, or CaO) in JP-B-61-14610 are proposed. However, the non-reduced dielectric ceramic composition disclosed in JP-A-62-256422 tends to form different phases including CaZrO3, CaTiO3 formed during firing step, and Mn. In the non-reduced dielectric ceramic composition disclosed in JP-A-63-103861, the dependencies of the insulation resistance and capacitance on the temperature are significantly affected by the particle size of the main component, BaTiO3, so the process to obtain stable characteristics is hardly controllable. Moreover, the product (CR) of the insulation resistance and electrostatic capacitance ranges from 1,000 to 2,000 (W×F). Further, in the composition disclosed in JP-B-61-14610, the dielectric constant of the resulting dielectric ceramic ranges 2,000 to 2,800, and is lower than that of conventional ceramic compositions using noble metals such as palladium, i.e., 3,000 to 3,500. Thus, the substitution of this composition for conventional materials, for the purpose of the cost reduction, is not favorable to the miniaturization of the capacitor with higher capacitance. Although all of the non-reduced dielectric ceramic compositions including the above-mentioned compositions, which have been proposed recently, have higher insulation resistances at a room temperature compared with conventional materials, the resistance tends to drastically decrease at a higher temperature. Therefore, the resistance against high temperature is low, and that causes difficult thinning of the dielectric substance, so no thin multilayer capacitor using a non-reduced dielectric ceramic composition has been realized. Further, conventional non-reduced dielectric ceramic compositions exhibit a low resistance against high-humidity in comparison with conventional materials using palladium as the internal electrode. SUMMARY OF THE INVENTION The present inventors have proposed novel non-reduced dielectric ceramic compositions in JP-A-5-09066, JP-A-5-09067, and JP-A-5-09068 in order to solve the above problems. Demands on compositions having further excellent properties have increased depending on properties required in the market, in particular, at a high-temperature, high-humidity. In accordance with the present invention, It is intended to provide a non-reduced dielectric ceramic composition applicable to a thin layer, which can be fired without the structural change to a semiconductor under a low oxygen partial pressure, has 3,000 or more of dielectric constant and 6,000 or more of insulation resistance expressed by CR product, and has excellent resistance against high temperature, and moisture. Further, in the ceramic composition of the present invention, the change of capacitance is fixed within ±15% over -55 °C to 125 °C when the capacitance at 25 °C is set to the standard. The non-reduced dielectric ceramic composition in accordance with the present invention is characterized by that the composition contains a main component including BaTiO3, at least one rare earth metal oxide (Re2O3) selected from the group consisting of Tb2O3, Dy2O3, Ho2O3 and Er2O3, and Co2O3, wherein such constituents are contained at a predetermined formulation in the main component, an sub component including BaO, MnO, MgO, and at least one compound selected from the group consisting of NiO and Al2O3, and an oxide glass mainly containing Li 2 O-(Si X Ti 1-X )O 2 -M, wherein M is at least one compound selected from the group consisting of Al2O3 and ZrO2, and the range of X is 0.30 ≤ X ≤ 1.00 and wherein the mole percent of the oxide glass is preferably included within the range of the hexagon, inclusive of sides, having vertices A(20,80,0), B(10,80,10), C(10,70,20), D(35,40,20), E(45,45,10), and F(45,55,0) expressed by the ternary diagram consisting of (Li 2 O, (Si X Ti 1-X )O 2 , M), wherein 0.30 ≤ X ≤ 1.00 in the composition on line F-A with the provision that when the composition falls on the line F-A, X ≠ 1. It was experimentally confirmed that the oxide glass content caused the increase of completeness of sintering, increase of registance against high temperature and moisture. The composition out of the range set forth above causes unsatisfactory decrease in completeness of sintering because the composition does not form glass even when quenching with iced water. Further, even if the composition is within the glass forming range set forth above, the composition of line F-A and X=1.00 is not suitable, since its most characteristics are lost at a high temperature and high humidity. Moreover, X of less than 0.3 does not form glass and thus decreases its completeness of sintering. By mixing these compounds according to a predetermined formulation optimally selected, the non-reduced dielectric ceramic composition of the present invention can be fired without change to a semiconductor of the structure even under a low oxygen partial pressure. The ceramic composition has 3,000 or more of dielectric constant and 6,000 or more of insulation resistance expressed by CR. Further, the change of capacitance is satisfactorily minimized within ±15% over -55 °C to 125 °C when the capacitance at 25 °C is set to the standard, that satisfies X7R characteristic defined in EIA. Moreover, the ceramic composition has excellent resistance against high temperature and moisture, and is applicable to a thin layer. Accordingly, when the non-reduced dielectric ceramic composition of the present invention is used as a dielectric material of multilayer semiconductor capacitors, base metals, such as nickel, can be used as an internal electrode material. Thus, in such capacitors, significant cost reduction can be achieved compared with capacitors using a noble metal, for example, palladium, without decreases in all the characteristics including resistance against high temperature and moisture. Preferred contents of BaTiO3, the rare earth metal oxide (Re2O3), and Co2O3 as main components in the non-reduced dielectric ceramic composition range from 92.0 to 99.4 mole percent for BaTiO3, 0.3 to 4.0 mole percent for Re2O3, and 0.3 to 4.0 mole percent for Co2O3 to total 100 mole percent of the main components. More preferably, the respective amounts are about 94.0 to 99.0 %, about 0.5 to 2.5 % and about 0.5 to 4.0 %. It was experimentally confirmed that this composition achieves a high insulation resistance, high dielectric constant, and stability of capacitance over wide temperature range. Since a content of BaTiO3 of less than 92.0 mole percent causes the increased contents of the rare earth metal oxide and Co2O3 in the composition, the insulation resistance and dielectric constant unsatisfactorily decrease. On the other hand, when the BaTiO3 content exceeds 99.4 mole percent, the addition of the rare earth metal oxide and Co2O3 has little effect, and the temperature-capacitance change at a high temperature near the Curie point drastically shifts toward the plus side. The contents set forth above in the present invention may include other ranges in which high insulation resistance, high dielectric constant, stability of capacitance over the wire temperature renege are achieved. The preferred content of BaO as the sub-component ranges from 0.05 to 4.0 mole percent, more preferably from 0.05 to 3.0 %, based on to 100 mole percent of the main components in the non-reduced dielectric ceramic composition. It was experimentally confirmed that this composition achieved a reduction of the dielectric loss tan δ and insulation resistance, and completeness of sintering. When the content is less than 0.05 mole percent, stable characteristics are not obtainable in a given sintering atmosphere resulting in the increase in tan δ and decrease in the insulation resistance. On the other hand, when the content exceeds 4.0 mole percent, the completeness of sintering decreases. In the present invention, the sub component content may include other ranges in which decrease of the dielectric loss tan d and insulation resistance, and increase of completeness of sintering, are achieved. Further, the preferred content of MnO as the sub component ranges from 0.05 to 2.0 mole percent, more preferably from 0.05 to 1.5 %, based on 100 mole percent of the main components in the non-reduced dielectric ceramic composition. It was experimentally confirmed that this composition achieved a decrease of insulation resistance, increase of resistance against high temperature and moisture. A MnO content of less than 0.05 mole percent causes an unsatisfactory decrease in the insulation resistance, whereas a content over 2.0 mole percent causes some decrease in the insulation resistance and shortening of mean time to failure (MTTF). In the present invention, the content of the sub-component MnO may include other ranges-in which the component achieve the decrease of insulation resistance, increase of resistance against high temperature and moisture. Moreover, the preferred content of MgO as the sub-component ranges from 0.5 to 5.0 mole percent, more preferably from 1.0 to 4.0 %, based on 100 mole percent of the main components in the non-reduced dielectric ceramic composition. It was experimentally confirmed that this component achieved the stability of capacitance within the wide temperature range, increase of dielectric constant, and decrease of insulation resistance. When the MgO content is less than 0.5 mole percent, the stability of capacitance over the wide temperature range is not guaranteed. In particular, the decrease of capacitance is large in the low temperature range. Further, the increase of insulation resistance is small. On the other hand, a content over 5.0 mole perent causes decreases in the dielectric constant and insulation resistance. In the present invention, the content of the sub-component MgO may include other ranges in which the component achieve a decrease of insulation resistance, increase of resistance against high temperature and moisture. Also, it is preferred that 0.3 to 3.0 mole percent of at least one of NiO and Al 2 O 3 sub-components is present, more preferably from 0.5 to 2.0 %, based on 100 mole percent of the main components in the non-reduced dielectric ceramic composition in accordance with present invention. By the addition of these component, increase of the insulation resistance and dielectric constant, and decrease of dielectric loss were achieved. When adding less than 0.3 mole percent of these components, insulation resistance decrease and MTTF is shortened since the resistance against reducing atmosphere decrease. On the other hand, the NiO addition exceeding 3.0 mole percent causes the decrease in the insulation resistance similar to the MnO addition, and the Al2O3 addition over 3.0 mole percent causes the decreased insulation resistance due to the incompleteness of sintering with increased dielectric loss. In the present invention, the content of the sub components NiO and/or Al2O3 may include other ranges in which the component achieve the decrease of insulation resistance, increase of dielectric constant and decrease of dielectric loss. In the non-reduced dielectric ceramic composition of the present invention, the alkaline metal oxide content, contained in the BaTiO3 as impurities, is preferably 0.04 weight percent or less, based on the experimental results on the increase in the dielectric constant. The alkaline metal oxide content over 0.04 weight percent in BaTiO3 is impractical due to the decreased dielectric constant. However, in the present invention, the content of the alkaline metal oxides may include other ranges in which the dielectric constant is increased. Further, the present invention is characterized by that the non-reduced dielectric ceramic composition contains BaZrO3 as an sub component. By mixing such a component according to a predetermined formulation optimally decided, the non-reduced dielectric ceramic composition of the present invention can be fired without changing to a semiconductor structure even under a low oxygen partial pressure. The ceramic composition has a dielectric constant of 3,000 or more and insulation resistance of 7,000 or more expressed by CR. Further, the capacitance change is restricted within ±15% over -55 °C to 125 °C when the capacitance at 25 °C is set to the standard that satisfies X7R characteristic defined in EIA. Moreover, the ceramic composition has excellent resistance against high temperature and moisture, and is applicable to thin layer components. Accordingly, when the non-reduced dielectric ceramic composition of the present invention is used as the dielectric material of multilayer semiconductor capacitors, base metals such as nickel can be used as an internal electrode material. Thus, significant cost reduction can be achieved in such capacitors, compared with capacitors using a noble metal, for example, palladium, without decreases of resistance against high temperature and moisture. In the non-reduced dielectric ceramic composition of the present invention, 0.3 to 4.0 mole percent of BaZrO3 is preferably present, more preferably 0.5 to 3.0 %, based on 100 mole percent of main components comprising a given amount of BaTiO3, at least one rare earth element (Re2O3) selected from the group consisting of Tb2O3, Dy2O3, Ho2O3, and Er2O3, and Co2O3, based on the experimental results on the increased insulation resistance, and stability of capacitance in the wide range of the temperature. A BaZrO3 content of less than 0.3 mole percent causes less increase in the insulation resistance. On the other hand, a content over 4.0 mole percent causes the noticeable decrease of the capacitance at high temperature region, although the insulation resistance is further increased. In the present invention, the content of the BaZrO3 sub-component may include other ranges in which the component achieves increase of insulation resistance and stability of capacitance in the wide temperature range. The preferred content of oxide glass set forth above is 0.5 to 2.5 weight percent per 100 weight percent of the above-mentioned sub-component, preferably 0.5 to 2.0 wt %, in the non-reduced dielectric ceramic composition of the present invention. It was experimentally confirmed that this content causes an increase of completeness of sintering, reducing resistance ad dielectric constant. An oxide glass content of less than 0.5 weight percent decreases the decrease of the completeness of sintering and little increase in the reducing resistance. A content exceeding 2.5 weight percent is impractical due to a decreased dielectric constant. In the present invention, the glass oxide content may include other ranges in which the component achieves the completeness of sintering, high resistance against reduction and high dielectric constant. BRIEF DESCRIPTION OF THE DRAWING Fig. 1 is a ternary diagram consisting of Li 2 O-(Si X Ti 1-X )O 2 -M wherein M is at least one kind selected from the group consisting of Al2O3 and ZrO2. DESCRIPTION OF THE PREFERRED EMBODIMENTS The following non-limiting Examples illustrate the non-reduced dielectric ceramic composition in accordance with the present invention. EXAMPLE 1 As starting materials, BaTiO3 containing various levels of alkaline metal oxide impurities; Tb2O3, Dy2O3, Ho2O3 and Er2O3 as rare earth oxides (Re2O3); Co2O3; BaCO3; MnCO3; MgO; NiO and Al2O3; and oxide glass were weighed so as to obtain compositions shown in Tables 1 and 2, where BaTiO3 containing 0.03 weight percent of alkaline metal oxides was basically used in each sample except for Sample Nos. 34 and 35 in which the alkaline metal oxide contents in BaTiO3 used were 0.05 and 0.07 weight percent, respectively. Sample No. BaTiO 3 (mol%) R e2 O 3 (mol%) Co 2 O 3 (mol%) BaO (mol%) MnO (mol%) MgO (mol%) NiO, Al 2 O 3 (mol%) Glass (Wt.%) 1 97.0 Dy 2 O 3 1.5 1.5 1.5 0.3 1.0 NiO 1.0 1.0 2 99.0 Dy 2 O 3 0.5 0.5 1.5 0.3 1.0 NiO 1.0 1.0 3* 99.6 Dy 2 O 3 0.2 0.2 1.5 0.3 1.0 NiO 1.0 1.0 4* 90.0 Dy 2 O 3 4.0 6.0 1.5 0.3 1.0 NiO 1.0 1.0 5 94.0 Dy 2 O 3 2.0 4.0 1.5 0.3 1.0 NiO 1.0 1.0 6 97.5 Ho 2 O 3 1.5 1.0 1.5 0.3 2.0 NiO 1.0 1.0 7 96.5 Ho 2 O 3 1.5 2.0 0.1 0.5 2.0 Al 2 O 3 1.0 1.0 8 96.5 Ho 2 O 3 1.5 2.0 0.05 0.5 2.0 Al 2 O 3 1.0 1.0 9* 96.5 Ho 2 O 3 1.5 2.0 0.03 0.5 2.0 Al 2 O 3 1.0 1.0 10 96.5 Ho 2 O 3 1.5 2.0 3.0 0.5 2.0 Al 2 O 3 1.0 1.0 11 96.5 Ho 2 O 3 1.5 2.0 4.0 0.5 2.0 Al 2 O 3 1.0 1.0 12* 96.5 Ho 2 O 3 1.5 2.0 5.0 0.5 2.0 Al 2 O 3 1.0 1.0 13 97.5 Tb 2 O 3 1.0 1.5 1.5 1.5 3.0 NiO 0.5 1.5 14 97.5 Tb 2 O 3 1.0 1.5 1.5 2.0 3.0 NiO 0.5 1.5 15* 97.5 Tb 2 O 3 1.0 1.5 1.5 2.5 3.0 NiO 0.5 1.5 16 97.5 Tb 2 O 3 1.0 1.5 1.5 0.05 3.0 NiO 0.5 1.5 17* 97.5 Tb 2 O 3 1.0 1.5 1.5 0.03 3.0 NiO 0.5 1.5 18* 97.0 Er 2 O 3 1.5 1.5 1.5 0.5 2.5 NiO 0.2 1.5 19 97.0 Er 2 O 3 1.5 1.5 1.5 0.5 2.5 NiO 2.0 1.5 20 97.0 Er 2 O 3 1.5 1.5 1.5 0.5 2.5 NiO 3.0 1.5 21* 97.0 Er 2 O 3 1.5 1.5 1.5 0.5 2.5 NiO 3.5 1.5 22* 97.0 Er 2 O 3 1.5 1.5 1.5 0.5 2.5 Al 2 O 3 3.5 1.5 23 96.5 Er 2 O 3 1.5 1.5 1.5 0.5 2.0 Al 2 O 3 1.5 1.5 24* 96.0 Dy 2 O 3 1.5 2.5 1.5 0.3 0.2 Al 2 O 3 1.5 2.0 25* 96.0 Dy 2 O 3 1.5 1.5 1.5 0.3 0.4 Al 2 O 3 1.5 2.0 Sample No. BaTiO 3 (mol%) R e2 O 3 (mol%) Ca 2 O 3 (mol%) BaO (mol%) MnO (mol%) MgO (mol%) NiO,Al 2 O 3 (mol%) Glass (Wt.%) 26 96.0 Dy 2 O 3 1.5 2.5 1.5 0.3 3.0 NiO 1.5 2.0 27 96.0 Dy 2 O 3 1.5 2.5 1.5 0.3 4.0 NiO 1.5 2.0 28 96.0 Dy 2 O 3 1.5 2.5 1.5 0.3 5.0 NiO 1.5 2.0 29* 96.0 Dy 2 O 3 1.5 2.5 1.5 0.3 6.0 NiO 1.5 2.0 30 96.5 Ho 2 O 3 2.0 1.5 1.5 0.5 2.0 NiO 1.0 2.5 31* 96.5 Ho 2 O 3 2.0 1.5 1.5 0.5 2.0 NiO 1.0 3.0 32 96.5 Ho 2 O 3 2.0 1.5 1.5 0.5 2.0 NiO 1.0 0.5 33* 96.5 Ho 2 O 3 2.0 1.5 1.5 0.5 2.0 NiO 1.0 0.3 34* 97.0 Dy 2 O 3 1.5 1.5 1.5 0.3 1.0 NiO 1.0 1.0 35* 97.0 Dy 2 O 3 1.5 1.5 1.5 0.3 1.0 NiO 1.0 1.0 36* 97.0 Tb 2 O 3 1.0 2.0 1.5 0.5 2.0 Al 2 O 3 1.5 2.0 37* 97.0 Tb 2 O 3 1.0 2.0 1.5 0.5 2.0 Al 2 O 3 1.5 2.0 38* 97.0 Tb 2 O 3 1.0 2.0 1.5 0.5 2.0 Al 2 O 3 1.5 2.0 39* 97.0 Er 2 O 3 1.0 2.0 1.5 0.5 2.0 Al 2 O 3 1.5 2.0 40* 97.0 Tb 2 O 3 1.0 2.0 1.5 0.5 2.0 Al 2 O 3 1.5 2.0 41* 97.0 Er 2 O 3 1.0 2.0 1.5 0.5 2.0 Al 2 O 3 1.5 2.0 42 97.0 Er 2 O 3 1.0 2.0 1.5 0.5 2.0 Al 2 O 3 1.5 2.0 43* 97.0 Er 2 O 3 1.0 2.0 1.5 0.5 2.0 Al 2 O 3 1.5 2.0 44 97.0 Er 2 O 3 1.0 2.0 1.5 0.5 2.0 Al 2 O 3 1.5 2.0 45* 97.0 Er 2 O 3 1.0 2.0 1.5 0.5 2.0 Al 2 O 3 1.5 2.0 In each sample, the oxide glass was prepared as follows: First, Li2O, SiO2, TiO2, Al2O3, and ZrO2 were prepared as raw materials. After these raw materials were weighed so as to obtain compositions shown in Tables 3 and 4, pure water was added to the weighed materials. The materials with water were mixed to disperse in a ball mill using PSZ balls. After removing pure water to dryness, the powder mixture was placed into a platinum crucible to heat at 1400 °C for 15 minutes in a glass furnace. The melt was taken out from the crucible, and quenched in iced water to obtain a bulk glass. After the bulk glass was roughly crushed in a mortar, the crushed glass was thoroughly water-ground in the ball mill using PSZ and a dispersant. The glass powder was obtained by evaporating the dispersant to dryness. Sample No. Li 2 O (mol%) (Si X Ti 1-X )O 2 (mol%) x (Mol Frac.) M (mol%) Al2O3 (mol%) ZrO2 (mol%) 1 20 80 0.90 0 - - 2 20 80 0.90 0 - - 3 20 80 0.90 0 - - 4 10 80 0.60 10 50 50 5 10 80 0.60 10 50 50 6 10 80 0.60 10 50 50 7 10 70 0.30 20 100 0 8 10 70 0.30 20 100 0 9 10 70 0.30 20 100 0 10 35 45 0.50 20 0 100 11 35 45 0.50 20 0 100 12 35 45 0.50 20 0 100 13 45 45 0.50 10 50 50 14 45 45 0.50 10 50 50 15 45 45 0.50 10 50 50 16 45 55 0.90 0 - - 17 45 55 0.90 0 - - 18 45 55 0.90 0 - - 19 20 70 1.00 10 70 30 20 20 70 1.00 10 70 30 21 20 70 1.00 10 70 30 22 20 70 1.00 10 70 30 23 20 70 1.00 10 70 30 24 20 70 1.00 10 70 30 25 30 60 0.60 10 30 70 Sample No. Li 2 O (mol%) (Si X Ti 1-X )O 2 (mol%) x (Mol Frac.) M (mol%) Al2O3 (mol%) ZrO2 (mol%) 26 30 60 0.60 10 30 70 27 30 60 0.60 10 30 70 28 30 60 0.60 10 30 70 29 30 60 0.60 10 30 70 30 30 60 0.60 10 30 70 31 40 50 0.30 10 50 50 32 40 50 0.30 10 50 50 33 40 50 0.30 10 50 50 34 40 50 0.30 10 50 50 35 40 50 0.30 10 50 50 36* 40 50 0.20 10 50 50 37* 10 85 0.90 5 50 50 38* 5 75 0.90 20 50 50 39* 20 55 0.90 25 50 50 40* 45 40 0.90 15 50 50 41* 50 45 0.90 5 50 50 42 25 75 0.90 0 - - 43* 25 75 1.00 0 - - 44 35 65 0.90 0 - - 45* 35 65 1.00 0 - - The oxide glass prepared in such a way contains at least one component among Li 2 O, (Si X Ti 1-X )O 2 (wherein 0.30 ≤ X ≤ 1), and M (wherein M represents Al2O3 and/or ZrO2) as shown in a ternary diagram of Fig. 1. In Fig. 1,the shaded hexagonal portion represents the range of the present invention, wherein Points A (20,80,0), B(10,80,10), C(10,70,20), D(35,45,20), E(45,45,10), and F(45,55,0) represents vertices of the hexagon. The raw slurry was prepared by dispersing and mixing each component shown in Tables 1 and 2 with a dispersant in the ball mill using PSZ balls. After adding an organic binder and plasticizer into the slurry, the mixture was thoroughly stirred. The mixture was shaped into a ceramic green sheet having a thickness of 12 mm by doctor blade method. A Ni conductive paste was screen-printed on the single side of the resulting ceramic green sheet to form an internal electrode. After drying it, a plurality of ceramic green sheets were laminated and pressed in the vertical direction of the sheets to obtain a laminated product. Green ceramic units were prepared by cutting out the laminated product into small pieces. After each green ceramic unit was held at 320 °C for 5 hours to remove the binder in the green ceramic unit, the unit was fired at any temperature shown in Tables 5 and 6 for 2 hours in a reducing H2/N2 mixed gas stream having a volume ratio of 3/100 in order to obtain a sintered dielectric element having a thickness of 8 mm. A laminated ceramic capacitor was made by applying a silver paste for the external electrode forming on the both end faces of the resulting sintered material and firing in air to form silver electrodes. The laminated ceramic capacitor was evaluated by the following items; dielectric constant at a room temperature e25, dielectric loss tand, insulation resistance (logIR), temperature-capacitance change (TCC), and weatherability, i.e., registance against high temperature and moisture. The results are summarized in Tables 5 and 6. In each item, 36 laminated ceramic capacitors were served to evaluate. The dielectric constant e25, and dielectric loss tand was measured at 25 °C, frequency of 1 KHz, and alternating voltage of 1 V. The insulation resistance was expressed by the product (CR) of the electrostatic capacitance multiplied by the result which was obtained by applying 16 V of dc voltage for 2 minutes at 25 °C. The temperature-capacitance change (TCC) was evaluated with the change rate of each capacitance at -55 °C and 125 °C to the standard electrostatic capacitance at 25 °C, i.e. DC-55/C25 and DC-125/C25, and the maximum change |DC/C25|max which is absolute value of the maximum temperature-capacitance change between -55 °C and 125 °C. Concerning the weatherability evaluations, a registance against high temperature was defined as the number of damaged samples after applying 64 V of dc voltage to 36 samples at 175 °C for 500 hours, but in case that all of the samples damaged within 500 hours, its MTTF was shown in Tables 5 and 6. The registance against moisture was evaluated by the number of damaged samples after applying dc voltage of 16 V to 36 samples at a temperature of 121 °C and humidity of 100% for 250 hours. When all of the samples were damaged within 250 hours, its MTTF was shown in Tables 5 and 6. Tables 5 and 6 evidently show the noticeable effects of the thin layer laminated ceramic capacitor using the non-reduced dielectric ceramic composition in accordance with the present invention, which are in no way inferior to conventional products using palladium and the like as the internal electrode. In Examples, the sample number with asterisk (*) has a composition deferring from the specified composition in the present invention, and is out of the range of the present invention. Then, samples with asterisk (*) will be explained. In sample No. 4, since the BaTiO3 content is 90.0 mole percent, the rare earth metal oxides and Co2O3 contents are increased as a result, resulting in the decreased insulation resistance and dielectric constant. In sample No. 3, since the BaTiO3 content is too high, i.e, 99.6 mole percent, there is no effects of the addition of rare earth metal oxides and Co2O3, and particularly, capacitance change is significantly large at temperature near the Curie point. In sample No. 9 containing 0.03 mole percent of the BaO, product characteristics become unstable in the firing atmosphere, resulting in the increased tand, the decreased insulation resistance. Sample No. 12 containing 5.0 mole percent of BaO causes the decrease in completeness of sintering. Sample No. 17 containing 0.03 mole percent of MnO causes the decrease in the insulation resistance. Sample 15 containing 2.5 mole percent of MnO causes the shortened MTTF due to the slight decrease in the insulation resistance. In sample Nos. 24 and 25 containing 0.2 mole percent, and 0.4 mole percent of MgO, respectively, such low MgO contents do not effectively flat the temperature-capacitance change curve, and in particular, tend to exhibit large capacitance change at a lower temperature region. Further the insulation resistance does not so noticeably increase. In sample No. 29 containing 6.0 mole percent of MgO, the dielectric constant and insulation resistance are decreased. In sample No. 18 containing only 0.2 mole percent of NiO, since non-reduced properties of the texture is almost not improved, the insulation resistance is decreased and the MTTF is shortened. In sample No. 21 containing 3.5 mole percent of NiO, the insulation resistance decreases. In sample No. 22 containing 3.5 mole percent of Al2O3, the dielectric constant decreases with the increased dielectric loss due to the decrease in sintering characteristics. In sample Nos. 34 and 35 in which the alkaline metal oxide contents as impurities in BaTiO3 are 0.05 and 0.07 weight percent, respectively, the dielectric constant decreases. In sample No. 33, the oxide glass content of 0.3 weight percent causes the decrease in completeness of sintering and very little improvement in registance against non-reducing atmosphere. In sample No. 31, the oxide glass content of 3.0 weight percent causes the decrease in the dielectric constant. In sample Nos. 37 through 41, since these compositions are out of the range expressed by the hexagon formed by six points, i.e., A, B, C, D, E, and F in the ternary diagram shown in Fig. 1, samples mostly lost the transparency without changing into glass after quenching in iced water, and causes the decreased completeness of sintering. Although sample Nos. 43 and 45 are included in the range expressed by the above-mentioned hexagon, these compositions are on line F-A and at the same time, X = 1.00. Thus, these samples show significantly bad characteristics at a high temperature or high humidity. In sample No. 36, since X equals to 0.20, the sample mostly lost the transparency without changing into glass. Thus sintering characteristics decreases in this sample. The present invention is not limited to such a Example, and it is to be understood that modifications will be apparent to those skilled in the art without departing from the scope of the invention. For example, various sub components can be added into the composition of the present invention without losing the above-mentioned characteristics. EXAMPLE 2 As starting materials, BaTiO3 containing various levels of alkaline metal oxide impurities; Tb2O3, Dy2O3, Ho2O3 and Er2O3 as rare earth oxides (Re2O3); Co2O3; BaCO3; MnCO3; MgO; NiO and Al2O3; BaZrO3 and oxide glass were weighed so as to obtain compositions shown in Tables 7 and 8, where BaTiO3 containing 0.03 weight percent of alkaline metal oxides was basically used in each sample except for Sample Nos. 40 and 41 in which the alkaline metal oxide contents in BaTiO3 used were 0.05 and 0.07 weight percent, respectively. Sample No. BaTiO 3 (mol%) R e2 O 3 (mol%) Co 2 O 3 (mol%) BaO (mol%) MnO (mol%) MgO (mol%) NiO,Al 2 O 3 (mol%) BaZrO 3 (mol%) Glass (Wt.%) 1 97.0 Dy 2 O 3 1.5 1.5 1.5 0.3 1.0 NiO 1.0 1.0 1.0 2 99.0 Dy 2 O 3 0.5 0.5 1.5 0.3 1.0 NiO 1.0 1.0 1.0 3* 99.6 Dy 2 O 3 0.2 0.2 1.5 0.3 1.0 NiO 1.0 1.0 1.0 4* 90.0 Dy 2 O 3 4.0 6.0 1.5 0.3 1.0 NiO 1.0 1.0 1.0 5 94.0 Dy 2 O 3 2.0 4.0 1.5 0.3 1.0 NiO 1.0 1.0 1.0 6 97.5 Ho 2 O 3 1.5 1.0 1.5 0.3 2.0 NiO 1.0 1.0 1.0 7 96.5 Ho 2 O 3 1.5 2.0 0.1 0.5 2.0 Al 2 O 3 1.0 1.0 1.0 8 96.5 Ho 2 O 3 1.5 2.0 0.05 0.5 2.0 Al 2 O 3 1.0 1.0 1.0 9* 96.5 Ho 2 O 3 1.5 2.0 0.03 0.5 2.0 Al 2 O 3 1.0 1.0 1.0 10 96.5 Ho 2 O 3 1.5 2.0 3.0 0.5 2.0 Al 2 O 3 1.0 1.0 1.0 11 96.5 Ho 2 O 3 1.5 2.0 4.0 0.5 2.0 Al 2 O 3 1.0 1.0 1.0 12* 96.5 Ho 2 O 3 1.5 2.0 5.0 0.5 2.0 Al 2 O 3 1.0 1.0 1.0 13 97.5 Tb 2 O 3 1.0 1.5 1.5 1.5 3.0 NiO 0.5 2.0 1.5 14 97.5 Tb 2 O 3 1.0 1.5 1.5 2.0 3.0 NiO 0.5 2.0 1.5 15* 97.5 Tb 2 O 3 1.0 1.5 1.5 2.5 3.0 NiO 0.5 2.0 1.5 16 97.5 Tb 2 O 3 1.0 1.5 1.5 0.05 3.0 NiO 0.5 2.0 1.5 17* 97.5 Tb 2 O 3 1.0 1.5 1.5 0.03 3.0 NiO 0.5 2.0 1.5 18* 97.0 Er 2 O 3 1.5 1.5 1.5 0.5 2.5 NiO 0.2 2.0 1.5 19 97.0 Er 2 O 3 1.5 1.5 1.5 0.5 2.5 NiO 2.0 2.0 1.5 20 97.0 Er 2 O 3 1.5 1.5 1.5 0.5 2.5 NiO 3.0 2.0 1.5 21* 97.0 Er 2 O 3 1.5 1.5 1.5 0.5 2.5 NiO 3.5 2.0 1.5 22* 97.0 Er 2 O 3 1.5 1.5 1.5 0.5 2.5 Al 2 O 3 3.5 2.0 1.5 23 96.5 Er 2 O 3 1.5 1.5 1.5 0.5 2.0 Al 2 O 3 1.5 2.0 1.5 24* 96.0 Dy 2 O 3 1.5 2.5 1.5 0.3 0.2 Al 2 O 3 1.5 2.0 2.0 25* 96.0 Dy 2 O 3 1.5 2.5 1.5 0.3 0.4 Al 2 O 3 1.5 2.0 2.0 26 96.0 Dy 2 O 3 1.5 2.5 1.5 0.3 3.0 NiO 1.5 2.0 2.0 27 96.0 Dy 2 O 3 1.5 2.5 1.5 0.3 4.0 NiO 1.5 2.0 2.0 28 96.0 Dy 2 O 3 1.5 2.5 1.5 0.3 5.0 NiO 1.5 2.0 2.0 29* 96.0 Dy 2 O 3 1.5 2.5 1.5 0.3 6.0 NiO 1.5 2.0 2.0 30 96.5 Ho 2 O 3 2.0 1.5 1.5 0.5 2.0 NiO 1.0 2.0 2.5 Sample No. BaTiO 3 (mol%) R e2 O 3 (mol%) Co 2 O 3 (mol%) BaO (mol%) MnO (mol%) MgO (mol%) NiO,Al 2 O 3 (mol%) BaZrO 3 (mol%) Glass (Wt.%) 31* 96.5 Ho 2 O 3 2.0 1.5 1.5 0.5 2.0 NiO 1.0 2.0 3.0 32 96.5 Ho 2 O 3 2.0 1.5 1.5 0.5 2.0 NiO 1.0 2.0 0.5 33* 96.5 Ho 2 O 3 2.0 1.5 1.5 0.5 2.0 NiO 1.0 2.0 0.3 34 97.0 Tb 2 O 3 2.5 1.0 1.0 0.5 1.5 Al 2 O 3 1.5 3.0 1.5 35 97.0 Tb 2 O 3 2.5 1.0 1.0 0.5 1.5 Al 2 O 3 1.5 4.0 1.5 36* 97.0 Tb 2 O 3 2.5 1.0 1.0 0.5 1.5 Al 2 O 3 1.5 5.0 1.5 37 97.0 Tb 2 O 3 2.5 1.0 1.0 0.5 1.5 Al 2 O 3 1.5 0.5 1.5 38 97.0 Tb 2 O 3 2.5 1.0 1.0 0.5 1.5 Al 2 O 3 1.5 0.3 1.5 39* 97.0 Tb 2 O 3 2.5 1.0 1.0 0.5 1.5 Al 2 O 3 1.5 0.1 1.5 40* 97.0 Dy 2 O 3 1.5 1.5 1.5 0.3 1.0 NiO 1.0 1.0 1.0 41* 97.0 Dy 2 O 3 1.5 1.5 1.5 0.3 1.0 NiO 1.0 1.0 1.0 42* 97.0 Tb 2 O 3 1.0 2.0 1.5 0.5 2.0 Al 2 O 3 1.5 1.5 2.0 43* 97.0 Tb 2 O 3 1.0 2.0 1.5 0.5 2.0 Al 2 O 3 1.5 1.5 2.0 44* 97.0 Tb 2 O 3 1.0 2.0 1.5 0.5 2.0 Al 2 O 3 1.5 1.5 2.0 45* 97.0 Tb 2 O 3 1.0 2.0 1.5 0.5 2.0 Al 2 O 3 1.5 1.5 2.0 46* 97.0 Tb 2 O 3 1.0 2.0 1.5 0.5 2.0 Al 2 O 3 1.5 1.5 2.0 47* 97.0 Er 2 O 3 1.0 2.0 1.5 0.5 2.0 Al 2 O 3 1.5 1.5 2.0 48 97.0 Er 2 O 3 1.0 2.0 1.5 0.5 2.0 Al 2 O 3 1.5 1.5 2.0 49* 97.0 Er 2 O 3 1.0 2.0 1.5 0.5 2.0 Al 2 O 3 1.5 1.5 2.0 50 97.0 Er 2 O 3 1.0 2.0 1.5 0.5 2.0 Al 2 O 3 1.5 1.5 2.0 51* 97.0 Er 2 O 3 1.0 2.0 1.5 0.5 2.0 Al 2 O 3 1.5 1.5 2.0 In each sample, the oxide glass was prepared as follows: First, Li2O, SiO2, TiO2, Al2O3, and ZrO2 were prepared as raw materials. After these raw materials were weighed so as to obtain compositions shown in Tables 9 and 10, pure water was added to the weighed materials. The materials with water were mixed to disperse in a ball mill using PSZ balls. After removing pure water to dryness, the powder mixture was placed into a platinum crucible to heat at 1400 °C for 15 minutes in a glass furnace. The melt was taken out from the crucible, and quenched in iced water to obtain a bulk glass. After the bulk glass was roughly crushed in a mortar, the crushed glass was thoroughly water-ground in the ball mill using PSZ and a dispersant. The glass powder was obtained by evaporating the dispersant to dryness. Sample No. Li 2 O (mol%) (Si x Ti 1-x )O 2 (mol%) x (mol%) M (mol%) Al 2 O 3 (mol%) ZrO 2 (mol%) 1 20 80 0.90 0 - - 2 20 80 0.90 0 - - 3 20 80 0.90 0 - - 4 10 80 0.60 10 50 50 5 10 80 0.60 10 50 50 6 10 80 0.60 10 50 50 7 10 70 0.30 20 100 0 8 10 70 0.30 20 100 0 9 10 70 0.30 20 100 0 10 35 45 0.50 20 0 100 11 35 45 0.50 20 0 100 12 35 45 0.50 20 0 100 13 45 45 0.50 10 50 50 14 45 45 0.50 10 50 50 15 45 45 0.50 10 50 50 16 45 55 0.90 0 - - 17 45 55 0.90 0 - - 18 45 55 0.90 0 - - 19 20 75 0.60 5 70 30 20 20 75 0.60 5 70 30 21 20 75 0.60 5 70 30 22 20 75 0.60 5 70 30 23 15 70 0.60 15 30 70 24 15 70 0.60 15 30 70 25 15 70 0.60 15 30 70 26 15 70 0.60 15 30 70 27 30 65 0.40 5 50 50 28 30 65 0.40 5 50 50 29 30 65 0.40 5 50 50 30 30 65 0.40 5 50 50 Sample No. Li 2 O (mol%) (Si x Ti 1-x )O 2 (mol%) x (mol%) M (mol%) Al 2 O 3 (mol%) ZrO 2 (mol%) 31 25 50 0.40 15 50 50 32 25 50 0.40 15 50 50 33 25 50 0.40 15 50 50 34 25 50 0.40 15 50 50 35 40 50 1.00 5 100 0 36 40 50 1.00 5 100 0 37 40 85 1.00 5 100 0 38 40 75 1.00 5 100 0 39 35 55 0.30 15 0 100 40 35 40 0.30 15 0 100 41 35 45 0.30 15 0 100 42* 35 75 0.20 15 0 100 43* 10 75 0.90 5 50 50 44* 5 65 0.90 20 50 50 45* 20 65 0.90 25 50 50 46* 45 40 0.90 15 50 50 47* 50 45 0.90 5 50 50 48 25 75 0.90 0 - - 49* 25 75 1.00 0 - - 50 35 65 0.90 0 - - 51* 35 65 1.00 0 - - The oxide glass prepared in such a way contains at least one component among Li 2 O, (Si X Ti 1-X )O 2 (wherein 0.30 ≤ X ≤ 1), and M (wherein M represents Al2O3 and/or ZrO2) as shown in a ternary diagram of Fig. 1. In Fig. 1, the shaded hexagonal portion represents the range of the present invention, wherein Points A (20,80,0), B(10,80,10), C(10,70,20), D(35,45,20), E(45,45,10), and F(45,55,0) represents vertices of the hexagon. A Ni conductive paste was screen-printed on the single side of the resulting ceramic green sheet to form an internal electrode. After drying it, a plurality of ceramic green sheets were laminated and pressed in the vertical direction of the sheets to obtain a laminated product. Green ceramic units were prepared by cutting out the laminated product into small pieces. After each green ceramic unit was held at 320 °C for 5 hours to remove the binder in the green ceramic unit, the unit was fired at any temperature shown In Tables 11 and 12 for 2 hours in a reducing H2/N2 mixed gas stream having a volume ratio of 3/100 in order to obtain a sintered dielectric element having a thickness of 8 mm. A laminated ceramic capacitor was made by coating a silver paste for the external electrode forming on the both end faces of the resulting sintered material and firing in air to form silver electrodes. The laminated ceramic capacitor was evaluated by the following items; dielectric constant at a room temperature e25, dielectric loss tand, insulation resistance (logIR), temperature-capacitance change (TCC), and registance against high temperature and moisture. The results are summarized in Tables 11 and 12. In each item, 36 laminated ceramic capacitors were served to evaluate. The dielectric constant e25, and dielectric loss tand was measured at 25 °C, frequency of 1 KHz, and alternating voltage of 1 V. The insulation resistance was expressed by the product (CR) of the electrostatic capacitance multiplied by the result which was obtained by applying dc voltage of 16 V for 2 minutes at 25 °C. The temperature-capacitance change (TCC) was evaluated with the percentage of change of each capacitance at -55 °C and 125 °C to the standard electrostatic capacitance at 25 °C, i.e. DC-55/C25 and DC-125/C25, and the maximum change ½DC/C25½max which is absolute value of the maximum temperature-capacitance change between -55 °C and 125 °C. Concerning the registance against a high temperature was defined as the number of failed samples after applying 64 V of dc voltage to 36 samples at 175 °C for 500 hours, but when all of the samples damaged within 500 hours, its MTTF was shown in Tables 11 and 12. The registance against moisture was evaluated by the number of damaged samples after applying 16 V of dc voltage to 36 samples at a temperature of 121 °C and humidity of 100% for 250 hours. When all of the samples damaged within 250 hours, its MTTF was also shown in Tables 11 and 12. Tables 11 and 12 evidently show the noticeable effects of the thin layer laminated ceramic capacitor using the non-reduced dielectric ceramic composition in accordance with the present invention, which are in no way inferior to conventional products using palladium and the like as the internal electrode. In Examples, the sample number with asterisk (*) has a composition deferring from the specified composition in the present invention, and is out of the range of the present invention. Then, samples with asterisk (*) will be explained. In sample No. 4, since the BaTiO3 content is 90.0 mole percent, the rare earth metal oxides and Co2O3 contents are increased as a result, resulting in the decreased insulation resistance and dielectric constant. In sample No. 3, since the BaTiO3 is contained by excessive 99.6 mole percent, there is no effects of the addition of rare earth metal oxides and Co2O3, and particularly, capacitance change is significantly large in the temperature at near the Curie point. In sample No. 9 containing 0.03 mole percent of the BaO, product characteristics become unstable in the firing atmosphere, resulting in the increased tand, the decreased insulation resistance. Sample No. 12 containing 5.0 mole percent of BaO causes the decrease in completeness of sintering. Sample No. 17 containing 0.03 mole percent of MnO causes the decrease in the insulation resistance. Sample 15 containing 2.5 mole percent of MnO causes the shortened MTTF due to the slight decrease in the insulation resistance. In sample Nos. 24 and 25 containing 0.2 mole percent, and 0.4 mole percent of MgO, respectively, such low MgO contents do not effectively flat the temperature-capacitance change curve, and in particular, tend to exhibit large change in capacitance at a lower temperature region. Further the insulation resistance does not so noticeably increase. In sample No. 29 containing 6.0 mole percent of MgO, the dielectric constant and insulation resistance are decreased. In sample No. 18 containing only 0.2 mole percent of NiO, since non-reduced properties of the texture is almost not improved, the insulation resistance is decreased and the MTTF is shortened. In sample No. 21 containing 3.5 mole percent of NiO, the insulation resistance decreases. In sample No. 22 containing 3.5 mole percent of Al2O3, the dielectric constant decreases with the increased dielectric loss due to the decrease in completeness of sintering. In sample Nos. 40 and 41 in which the alkaline metal oxide contents as impurities in BaTiO3 are 0.05 and 0.07 weight percent, respectively, the dielectric constant decreases. In sample No. 39 in which 0.1 mole percent of BaZrO3 is added, the insulation resistance does not so satisfactory increase. In sample No. 36 in which 5.0 mole percent of BaZrO3 is added, although the insulation resistance further increases, the capacitance is significantly changed at a higher temperature region. In sample No. 33, the oxide glass content of 0.3 weight percent causes the decrease in completeness of sintering and very little improvement in the non-reduced property. In sample No. 31, the oxide glass content of 3.0 weight percent causes the decrease in the dielectric constant. In sample Nos. 43 through 47, since these compositions are out of the range expressed by the hexagon formed by six points, i.e., A, B, C, D, E, and F in the ternary diagram shown in Fig. 1, most of the part in the samples lost its transparency without changing into glass after quenching in iced water, and causes the decrease of completeness of sintering. Although sample Nos. 49 and 51 are included in the range expressed by the above-mentioned hexagon, these compositions are on line F-A and at the same time X = 1.00. Thus, these samples show significantly bad characteristics at a high temperature or high humidity. In sample No. 42, since X equals to 0.20, most of the parts of the sample lost its transparency without changing into glass. Thus sintering characteristics decreases in this sample. The present invention is not limited to such a Example, and it is to be understood that modifications will be apparent to those skilled in the art without departing from the scope of the invention. For example, various sub components can be added into the composition of the present invention without losing the above-mentioned characteristics.

Claims: A non-reduced dielectric ceramic composition comprising: a main component comprising BaTiO3; at least one rare earth metal oxide (Re2O3) selected from the group consisting of Tb2O3, Dy2O3, Ho2O3, and Er2O3; and Co2O3,; a sub-component comprising BaO, MnO, MgO, and at least one compound selected from the group consisting of NiO and Al2O3; and an oxide glass consisting essentially of Li 2 O-(Si X Ti 1-X )O 2 -M wherein M represents at least one member selected from the group consisting of Al2O3 and/or ZrO2 and X is from 0.3 to 1 and wherein the mole percent of said oxide glass constituents are within a hexagon having the following vertices in a ternary diagram comprising Li 2 O-(Si X Ti 1-X )O 2 -M: A (20,80,0), B (10,80,10), C (10,70,20), D (35,45,20), E (45,45,10), and F (45,55,0); with the provision that when the composition falls on the line F-A, X ≠ 1. A non-reduced dielectric ceramic composition according to claim 1, wherein the said main component comprises 92.0 to 99.4 mole percent of said BaTiO3, 0.3 to 4.0 mole percent of said Re2O3; and 0.3 to 4.0 mole percent of said Co2O3, of the total 100 mole percent of said main component. A non-reduced dielectric ceramic composition according to claim 1, wherein 0.05 to 4.0 mole percent of said BaO as said sub-component is present per 100 mole percent of said main component. A non-reduced dielectric ceramic composition according to claim 1, wherein 0.05 to 2.0 mole percent of said MnO as said sub-component is present per 100 mole percent of said main component. A non-reduced dielectric ceramic composition according to claim 1, wherein 0.5 to 5.0 mole percent of said MgO as said sub-component is present per 100 mole percent of said main component. A non-reduced dielectric ceramic composition according to claim 1, wherein 0.3 to 3.0 mole percent of at least one member as said sub-component selected from a group consisting of said NiO and Al2O3 is present per 100 mole percent of said main component. A non-reduced dielectric ceramic composition according to claim 1, wherein said BaTiO3 contains 0.04 weight percent or less of an alkaline metal oxide as an impurity. A non-reduced dielectric ceramic composition according to claim 1, wherein said composition also contains BaZrO3 as sub-component. A non-reduced dielectric ceramic composition according to claim 8, wherein 0.3 to 4.0 mole percent of said BaZrO3 is present per 100 mole percent of said main component. A non-reduced dielectric ceramic composition according to claim 1, wherein 0.5 to 2.5 weight percent of said oxide glass is present based on the weight of said sub-component. A non-reduced dielectric ceramic composition according to claim 2, containing 0.05 to 4.0 mole percent of said BaO per 100 mole percent of said main component, 0.05 to 2.0 mole percent of said MnO per 100 mole percent of said main component, 0.5 to 5.0 mole percent of said MgO per 100 mole percent of said main component, 0.3 to 3.0 mole percent of said at least one member as said sub-component selected from a group consisting of said NiO and Al 2 O 3 per 100 mole percent of said main component, 0.5 to 2.5 weight percent of said oxide glass based on the weight of said sub-component, wherein said BaTiO 3 contains 0.04 weight percent or less of an alkaline metal oxide as an impurity. A non-reduced dielectric ceramic composition according to claim 11, in which the said main component comprises 94 to 99 mole percent of said BaTiO 3 , 0.5 to 2 mole percent of said Re 2 O 3 ; and 1.5 to 2.5 mole percent of said Co 2 O 3 , of the total 100 mole percent of said main component,0.1 to 3 mole percent of said BaO per 100 mole percent of said main component, 0.3 to 1.5 mole percent of said MnO per 100 mole percent of said main component, 1 to 3 mole percent of said MgO per 100 mole percent of said main component, 1 to 2 mole percent of said at least one member as said sub-component selected from a group consisting of said NiO and Al 2 O 3 per 100 mole percent of said main component, 0.5 to 2.5 weight percent of said oxide glass based on the weight of said sub-component, and wherein said BaTiO 3 contains 0.04 weight percent or less of an alkaline metal oxide as an impurity. A non-reduced dielectric ceramic composition according to claim 12, wherein said composition also contains BaZrO 3 as sub-component in an amount of 0.3 to 4.0 mole percent of said BaZrO 3 per 100 mole percent of said main component. An electrical component comprising a conductor and non-reduced dielectric ceramic composition in accordance with claim 1. An electrical component comprising a conductor and non-reduced dielectric ceramic composition in accordance with claim 8. An electrical component comprising a conductor and non-reduced dielectric ceramic composition in accordance with claim 11. An electrical component comprising a conductor and non-reduced dielectric ceramic composition in accordance with claim 12. An electrical component comprising a conductor and non-reduced dielectric ceramic composition in accordance with claim 13.

Inventors: HAMAJI YUKIO, NISHIYAMA TOSHIKI, HAMAJI, YUKIO, NISHIYAMA, TOSHIKI
Applicants: MURATA MANUFACTURING CO, MURATA MANUFACTURING CO., LTD.
Application year: 1996
Main classification: C04B35
IPC codes: C04B35, H01G4