INTERLACED LAYOUT CONFIGURATION FOR DIFFERENTIAL PAIRS OF INTERCONNECT LINES

Abstract: An SRAM array configuration includes even bitline pairs which each laterally interchange at a crossover placed at the 1/2 point along the length of the bitline pairs, and which SRAM array includes odd bitline pairs which each laterally interchange at each of two associated crossovers at the 1/4 and 3/4 points along the length of the bitline pairs. Consequently, signals or noise resident on neighboring bitline pairs or other neighboring conductive structure couple a common-mode voltage onto a given bitline pair through lateral parasitic capacitance to the neighboring conductive structure. Such a common-mode noise signal does not affect the differential signal on the given bitline pair. This interlace configuration is useful for one or more pairs of differential signal lines, whether used within an SRAM array or for global interconnect between circuit blocks.

Description: INTERLACED LAYOUT CONFIGURATION FOR DIFFERENTIAL PAIRS OF INTERCONNECT LINES BACKGROUND OF THE INVENTION Field of the Invention This invention relates to the layout of interconnect lines within integrated circuits, and more specifically relates to the layout of one or more pairs of differential signal lines upon an integrated circuit. Description of Related Art As horizontal dimensions used in the layout of integrated circuits have decreased, the affect of lateral parasitic capacitance on the loading of various interconnection lines has consequently increased. This is particularly true with long interconnections, such as are typically encountered, for example, in the array of a static RAM (SRAM). In an SRAM array, neighboring signal lines can impact the signal strength of each bitiine pair due to the capacitive coupling of undesired signals from the neighboring signal lines. This can cause slow or pattern dependent access times for fully static devices or, ifthe data is latched, it can cause wrong data to be latched. As an example. Fig. 1 shows a small portion of a representative single port SRAM array showing one wordline (also known as a row line) and three bitiine pairs. A first bitiine BL10. and its corresponding complement bitiine XBL10. together form the first bitiine pair. Bitlines BL1 1 and XBL1 1 together form the second bitiine pair, and bitlines BL12 and XLB12 form the third bitiine pair. A single wordline RLX addresses three memory cells. S 10. S 1 1 , and S12 which are respectively associated with bitiine pairs BL10/XBL10, BL1 1 XBL1 1. and BL12 XBL12. Bitiine load L10 is connected to both BL10 and XBL10 (which may also be collectively known as bitiine 10). Likewise bitiine load Ll 1 and bitiine load L12 are respectively connected to bitiine pairs BL1 1/XBL1 1 and BL12/XBL12. Sense amp SAI 1, sense amp SA12 and sense amp SA13 are respectively coupled to bitiine pairs BL10/XBL10. BL1 1/XBL1 1. and BL12/XBL12. A capacitor CBL10 represents the total capacitive load from bitiine BL10 to all structures other than the individual bitlines adjacent to bitiine BL10. Likewise, capacitor CXBL 10 represents the total capacitive load on bitiine XBL10 with the same exception of the capacitance to individual adjacent bitlines. The capacitance on a given bitiine may be represented by a single lumped capacitor, such as capacitor CBL10. even though the total capacitance actually includes a number of individual capacitors, each connected between the bitiine and a neighboring or overlapping structure. Similarly, capacitors CBL1 1, CXBL11, CBL12. and CXBL 12 represent a corresponding capacitive load on bitlines BLl 1. XBL1 1, BLl 2. and XBL12, respectively. Capacitors CCI. CC2, CC3. CC4, CC5, CC6 and CC7 represent capacitive loading from a given bitiine to an adjacent bitiine. For example, capacitor CC3 represents the lateral parasitic capacitance between bitlines XBLIO and BLl 1. As a further example, capacitor CC6 represents the lateral parasitic capacitance between bitlines BLl 2 and XBL12. Capacitor CCI represents the lateral parasitic capacitance between bitiine BL10 and a line (not shown) running adjacent to bitiine BL10. Likewise, capacitor CC7 represents a similar lateral parasitic capacitance between bitiine XBL12 and a line (or other interconnection, not shown) running adjacent to bitiine XBL12. A variety of SRAM configurations are possible. For example, ifthe SRAM array depicted in Fig. 1 is dynamically precharged, both bitlines of a bitiine pair are typically precharged high. When a wordline is enabled, one bitiine. either the true or the complement bitiine, is driven low by the addressed memory cell. Such a bitiine is usually never driven all the way to ground potential due to the bitiine load structures. In other configurations, both bitlines may equilibrate to an intermediate level and the activation of a wordline may cause one bitiine to be actually driven high while the other is driven low. For the purposes of this discussion, one can generalize that for a given bitiine pair, one bitiine is driven high while the other bitiine is driven low whenever a memory cell is addressed by an active wordline. Further for the purposes of this discussion, we can assume that the polarity convention of the bitlines is such that when a logic "1 " is read from a memory cell, for example memory cell SlO, bitiine BL10 remains high or is driven high (toward VDD) and bitiine XBLIO is driven low (toward VSS or ground). Conversely, when a logic "0" is read from memory cell SlO, bitiine XBL10 remains high and bitiine BL10 is driven toward ground. This choice is entirely arbitrary but is consistent with that frequently encountered in the art. An example ofthe effect of neighboring signal lines on a given bitiine can be seen by assuming that the memory cells SlO, Si 1 and S12 all contain a logic "0". When wordline RLX is activated, the true bitlines BL10. BLl 1 and BLl 2 are all driven toward ground and the complement bitlines XBLIO, XBL1 1 and XBL12 are all driven high or remain high, depending on design choices in the SRAM configuration. In the "0". "0", "0" data pattern example described above, bitiine BLl 1 is driven low and is surrounded by bitlines XBL10 an XBL1 1. both of which are driven high. Consequently. coupling capacitors CC3 and CC4 tend to impart a positive voltage transition on bitiine BLl 1 which is opposite in direction to the low-going transition caused by the reading of the logic "0" within memory cell Si l . Furthermore, bitiine XBLl 1 is driven high by the reading of memory cell Si l and is surrounded by bitlines BLl 1 and BLl 2, which are actively driven low and which couple a negative-going voltage onto bitiine XBLl 1. The net effect of the lateral coupling from bitlines XBLIO and BLl 2 into both bitlines BLl 1 and XBLl 1 tends to delay the development of the intended differential voltage conveyed on bitlines BLl 1 and XBLl 1, and thus delays the successful readout of memory cell Si l. This would, of course, result in an access time penalty which is data-dependent. Such an impact is dependent upon the bitiine spacings, oxide thickness, metal line thickness, the cell currents, the elapsed time, and other variables generally known in the art. These unwanted capacitive effects can either delay or advance the signal differential between bitlines BLl 1 and XBLl 1 which again further leads to pattern dependent access time. For example, if memory cells S 10 and S 12 each contained a logic " 1 ". then the differential signal conveyed on bitlines BLl 1 and XBLl 1 is increased by capacitive coupling through capacitors CC3 and CCS. Such an effect is highly undesirable in a SRAM array. Further, if an array is latched, such an effect may lead to incorrect functionality rather than merely an access time dependency. SUMMARY OF THE INVENTION It is an object ofthe present invention to eliminate data pattern sensitivity in SRAM arrays due to lateral capacitive coupling from adjacent lines. It is a further object ofthe present invention to eliminate any unwanted differential signal imparted upon a pair of differential interconnect lines being coupled by unrelated signals on one or more neighboring electrical structures. These and other objects are accomplished by the current invention in which a pair of differential signal lines is laterally interchanged such that the first line ofthe pair is disposed adjacent to a neighboring conductive structure for a length substantially equal to a length that the second line of the pair is disposed adjacent to the neighboring conductive structure. In one embodiment for an integrated circuit, the present invention includes a first pair of conductive interconnection lines for communicating a differential signal therebetween, said first pair comprising a first line and a second line, each disposed substantially adjacent to and parallel to the other and each fabricated substantially from a given interconnect level. A neighboring conductive structure is generally disposed adjacent to the first pair of conductive interconnection lines. The first and second lines of the pair of conductive interconnection lines laterally interchange in at least one location such that the first line is disposed adjacent to and at a given spacing from the neighboring conductive structure for a length substantially equal to a length that the second line is disposed adjacent to and at the given spacing from the neighboring conductive structure. In a second embodiment ofthe current invention, an integrated circuit includes a plurality of interconnect line pairs for communicating a respective plurality of differential signals thereon, said plurality of interconnect line pairs having even-numbered interconnect line pairs and odd- numbered interconnect line pairs. Each of said odd-numbered interconnect line pairs includes (1) a first interconnect line, and a second interconnect line disposed generally parallel to, adjacent to, and at a certain spacing from the first interconnect line, said first and second interconnect lines together traversing a certain length across the integrated circuit; and (2) a first cross-over structure providing a lateral interchange ofthe first and second interconnect lines. thereby reversing the relative position ofthe first interconnect line with respect to the second interconnect line, wherein the crossover structure is disposed at a position along the first and second interconnect lines corresponding to one-half of the certain length. Each of said even- numbered interconnect line pairs includes (1) a third interconnect line, and a fourth interconnect line disposed generally parallel to. adjacent to, and at a certain spacing from the third interconnect line, said third and fourth interconnect lines together traversing across the integrated circuit for a length equal to the certain length; (2) a second cross-over structure providing a lateral interchange of the third and fourth interconnect lines, thereby reversing the relative position of the third interconnect line with respect to the fourth interconnect line, wherein the crossover structure is disposed at a position along the third and fourth interconnect lines corresponding to one-fourth ofthe certain length; and (3) a third cross-over structure providing a lateral interchange ofthe third and fourth interconnect lines, thereby reversing the relative position ofthe third interconnect line with respect to the fourth interconnect line, wherein the crossover structure is disposed at a position along the third and fourth interconnect lines corresponding to three-fourths ofthe certain length. In another embodiment, an interconnect structure for communicating a plurality of differential signals across an integrated circuit includes a plurality of interconnect line pairs comprising even-numbered interconnect line pairs and odd-numbered interconnect line pairs, each of said plurality of interconnect line pairs traversing a certain length across the integrated circuit, each of said plurality of interconnect line pairs including a respective first interconnect line and a respective second interconnect line disposed generally parallel to, adjacent to. and at a certain spacing from the respective first interconnect line. Each of the odd-numbered interconnect line pairs includes a first cross-over disposed at a position along a respective length thereof corresponding to one-half of the certain length. Each ofthe even-numbered interconnect line pairs includes a second cross-over disposed at a position along a respective length thereof corresponding to one-fourth ofthe certain length, and further includes a third cross-over disposed at a position along a respective length thereof corresponding to three-fourths ofthe certain length. Each of said first, second, and third crossovers provides a lateral interchange in the relative position of the respective first and second interconnect lines. In yet another embodiment of the current invention, an SRAM memory array within an integrated circuit includes a plurality of bitiine pairs comprising even-numbered bitiine pairs and odd-numbered bitiine pairs, each of said plurality of bitiine pairs traversing a certain length across the memory array, each of said plurality of bitiine pairs comprising a respective first bitiine and a respective second bitiine disposed generally parallel to, adjacent to, and at a certain spacing from the respective first bitiine. Each ofthe odd-numbered bitiine pairs comprises a first cross-over disposed at a position along a respective length thereof corresponding to one-half ofthe certain length. Each of the even-numbered bitiine pairs comprises a second cross-over disposed at a position along a respective length thereof corresponding to one-fourth ofthe certain length, and further comprises a third cross-over disposed at a position along a respective length thereof corresponding to three-fourths ofthe certain length. Each of said first, second, and third crossovers provides a lateral interchange in the relative position of the respective first and second bitlines. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1. labeled prior art. is a schematic diagram which illustrates a representative portion of a traditional single-port SRAM array. Fig. 2 is a schematic diagram which illustrates a representative portion of a single port SRAM array in accordance with the current invention. Fig. 3 is a schematic diagram which represents an additional schematic view of the array disclosed in Fig. 2. Fig. 4 is a schematic diagram which illustrates an additional embodiment ofthe current invention for a single port SRAM array. Fig. 5 is a schematic diagram which illustrates an additional embodiment of the current invention useful for a differential interconnect pair which is not necessarily related to an SRAM array. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Referring to Fig. 2, an array 30 is shown in accordance with the current invention which utilizes an interlaced bit-line configuration. The array 30 is vertically divided into 4 equal-height sections, each corresponding to a group of wordlines. Wordline groups 32. 34, 36, and 38 each preferably contain the same number of individual wordlines, each of which couples a memory cell to an associated bitiine pair. For the sake of clarity, the individual memory cells are not shown, but are connected to a wordline and a bitiine pair, as is well known in the art, and as is shown in Fig. 1. Further, the bitiine load structures and the sense amplifiers are also not shown. Four bitiine pairs are shown in Fig. 2, but it should be understood by one skilled in the art that Fig. 2 represents a structure extendable to a greater number of bitlines in an array and greater number of wordline groups. The left-most bitiine pair includes a true bitiine BLl and its associated complement bitiine XBLl . These bitlines are simply referred to as bitlines BLl and XBLl and laterally interchange position at cross-over 40. which is positioned between wordline group 32 and wordline group 34. Such a crossover may be fabricated in a variety of ways, such as using a short length of a separate interconnect level than used for the two bitlines throughout the bulk of the array, as is well known in the art. Further, bitlines BLl and XBLl laterally interchange position again at cross-over 42, which is positioned between wordline group 36 and wordline group 38. Since each ofthe four wordline groups 32, 34, 36. and 38 contain the same number of wordlines. crossovers 40 and 42 therefore are positioned at the 1/4 and 3/4 points, respectively, along the length of bitlines BLl and XBLl . The second bitiine pair (bitlines BL2 and XBL2) laterally interchanges position once at cross-over 44. which is positioned between wordline group 34 and wordline group 36. Thus, crossover 44 is positioned at the 1/2 point along the length of bitiine BL2 and bitiine XBL2. Bitlines BL3 and XBL3 laterally interchange position twice (at crossovers 46 and 48) in a similar fashion to bitlines BLl and XBLl. and bitlines BL4 and XBL4 laterally interchange position once (at crossover 50) in a similar fashion to bitlines BL2 and XBL2. Fig. 3 represents the same array 30 as is shown in Fig. 2 and indicates a variety of lateral parasitic capacitors between the various bitlines. but which omits the wordline groups 32, 34, 36, and 38 for the sake of clarity. Region 51 is shown corresponding to the portion of each bitiine pair falling within wordline group 32. Similarly, regions 52. 53. and 54 correspond to the portions of each bitiine pair falling within wordline groups 34. 36, and 38, respectively, and which also correspond to the locations of the various crossovers along the length ofthe bitiine pairs. Referring now to bitiine BL2, capacitor CC31 represents the lateral parasitic capacitance between the portion of bitlines BL2 and XBLl located within region 51. Such a parasitic capacitance typically results from the lateral fringing fields through a dielectric (e.g., silicon dioxide or silicon nitride) between adjacent conductors. Capacitor CC32 represents the parasitic capacitance between the respective portions of bitlines BL2 and BLl located within region 52. Capacitor CC33 represents the lateral parasitic capacitance between the portion of bitlines XBL2 and BLl located within region 53. and capacitor CC34 represents the lateral parasitic capacitance between the portion of bitlines XBL2 and XBLl located within region 54. Capacitors CC51 -CC54 represent the lateral parasitic capacitance between bitiine pairs BL2/XBL2 and BL3/XBL3 in each ofthe regions 51-54 in a similar fashion as just described, as do capacitors CC71-CC74 for bitiine pairs BL3/XBL3 and BL4/XBL4. Capacitors CCI 1 -CCI 4 and CC91-CC94 represent lateral parasitic capacitance to adjacent bitlines (or to other structures) not shown. Capacitor CC41 represents the parasitic capacitance between the portion of bitlines BL2 and XBL2 located within region 51. Capacitor CC42 represents the parasitic capacitance between the portion of bitlines BL2 and XBL2 located within region 52. Capacitor CC43 represents the parasitic capacitance between the portion of bitlines XBL2 and BL2 located within region 53. and capacitor CC44 represents the parasitic capacitance between the portion of bitlines XBL2 and BL2 located within region 54. Capacitors CC21-CC24 are associated similarly with bitiine pair BL1/XBL1. as are capacitors CC61-CC64 to bitiine pair BL3/XBL3, and as are capacitors CC81 -CC84 to bitiine pair BL4 XBL4. To understand the advantages of this array 30. consider a wordline (not shown in Fig. 3) being activated during a read operation, which imparts a differential signal onto each of the bitiine pairs BL1/XBL1. BL2/XBL2. BL3/XBL3. and BL4/XBL4. Any change in voltage which occurs on. for example, bitiine XBLl couples a voltage onto bitiine BL2 through capacitor CC31. but also couples a voltage onto bitiine XBL2 through capacitor CC34. If capacitors CC31 and CC34 are matched in size, then the magnitude of any voltage actually coupled onto bitiine BL2 is equal to the voltage coupled onto bitiine XBL2. and is thus a common-mode voltage to the bitiine pair BL2/XBL2 and not a differential voltage. Likewise, any change in voltage which occurs on bitiine BLl couples a voltage onto bitiine BL2 through capacitor CC32 and further couples a like voltage onto bitiine XBL2 through capacitor CC33. With capacitors CC31, CC32, CC33. and CC34 equal in magnitude, any change in voltage on either bitlines BLl or XBLl equally affects both bitlines BL2 and XBL2 so that no net differential voltage is induced upon bitlines BL2/XBL2. Consequently, a differential signal developed on bitlines BL2/XBL2 by a memory cell connected thereto is not influenced by any pattern sensitivity of data read from memory cells on bitiine pair BLl /XBLl. An analysis of capacitors CC51-CC54 produces an equivalent result for bitiine pair BL3/XBL3. The bitiine pair BL2 XBL2 is also not influenced by any pattern sensitivity of data read on bitiine pair BL3/XBL3. Similarly, one can appreciate that a differential signal developed on either bitiine pair BLl /XBLl or BL3/XBL3 by a memory cell connected respectively thereto is not influenced by any pattern sensitivity of data read on bitiine pair BL2/XBL2. Capacitors CC31-CC34 are easily made equal in magnitude by matching the lateral spacing between adjacent bitiine portions which form each ofthe parasitic capacitors CC31-CC34 and by using the same memory cell layout throughout the array. While in most array structures useful for an SRAM the lateral parasitic capacitor CC31 is made identical to capacitor CC51 (and likewise each of capacitors CC31-CC34 is equal to capacitors CC51-CC54), the absence of pattem or speed sensitivity described above is preserved even though capacitor CC31 is not equal to capacitor CC51. So long as capacitors CC31. CC32, CC33. and CC34 are all equal in magnitude, and capacitors CC51, CC52. CC53, and CC54 are all equal in magnitude, then the above-described absence of speed and pattem sensitivity is achieved. Referring now to Fig. 4, an additional embodiment ofthe present invention shows an array having altemate VDD and VSS power supply lines running between adjacent bitiine pairs. Array poπion 65 includes bitiine pair BL60/XBL60. which includes two crossovers similar to bitiine pair BL1/XBL1 of Figs. 2 and 3. and bitiine pair BL61/XBL61 which includes a single crossover similar to bitiine pair BL2/XBL2 of Figs. 2 and 3. A VSS line 62 runs adjacent to bitiine pair BL60/XBL60 (and also adjacent to a potentially neighboring bitiine pair which is not shown), while a VDD line 63 runs adjacent to and between bitiine pairs BL60/XBL60 and BL61/XBL61. One skilled in the art can easily recognize that such an array 65 is extendable to greater numbers of bitiine pairs. For clarity, as in Fig. 3, neither the wordlines nor the memory cells are shown. Because power lines may exhibit significant electrical noise (unwanted changes in voltage) due to dynamic currents and the non-zero inductance and resistance of integrated circuit power busses, both VSS line 62 and VDD line 63 may contain AC noise. Nonetheless, any voltage coupled onto bitiine BL60 through capacitors CC67 and CC68 by AC noise on VDD line 63 is offset by an equal voltage coupled onto bitiine XBL60 through capacitors CC66 and CC69, assuming, of course, that capacitors CC66, CC67, CC68. and CC69 are all equal in magnitude. Consequently, any desired differential signal arising from reading a memory cell associated with bitiine pair BL60 XBL60 is unaffected by supply noise on VDD line 63. One skilled in the art can appreciate that AC noise present on VSS line 62 will also not affect the differential signal on bitiine pair BL60/XBL60. Similarly, neither noise on VDD line 63 nor noise on VSS line 64 affects the differential signal arising from reading a memory cell associated with bitiine pair BL61/XBL61. Parasitic capacitive coupling can induce an unwanted signal on a given interconnect line not only from an adjacent interconnect line, but also from interconnect lines even more distant than the immediately adjacent line. For example, capacitor CC76 represents the lateral parasitic capacitance between bitlines XBL61 and XBL60 within the region 71. Similarly, capacitors CC77-CC79 represent the lateral parasitic capacitance between bitlines XBL61 and BL60 within region 72. between bitlines BL61 and BL60 within region 73. and between bitlines BL61 and XBL60 within region 74, respectively. When these capacitors CC76, CC77, CC78, and CC79 are all made equal in magnitude (for example, as when regions 71-74 each include the same number of wordlines), then the voltages coupled onto each of bitlines BL60 and XBL60 due to any change in voltage on either bitlines BL61 or XBL61 remain balanced and will not affect the desired differential voltage arising from a memory cell associated with the bitiine pair BL60/XBL60. The interlaced bitiine structure discussed thus far provides a desirable structure for any differential pair of interconnect lines, not just a bitiine pair as in a SRAM. Providing for one or more crossovers when running a differential line, in a similar fashion to that described above, affords protection from non-common-mode coupling from a neighboring conductive structure, whether such a structure includes other pairs of differential interconnect lines, or a power bus, or a combination thereof, and whether such a structure is adjacent to only one side ofthe differential pair in question, or whether a separate conductive structure is adjacent to each side of the differential pair. Fig. 5 illustrates an embodiment ofthe present invention suitable for usage in other than an SRAM array. An interlaced pair of differential signal lines 80 and 81 are placed between power plane 82 and power plane 83. Signal lines 80 and 81 laterally interchange at crossover 84. In a similar analysis as applied above to Fig. 4, one can appreciate that any voltage coupled onto signal lines 80 or 81 from AC noise resident on either power plane 82 or 83 couples uniformly to both signal line 80 and 81, and results in a common-mode offset ofthe differential voltage present between signal lines 80 and 81. The differential voltage itself is not affected. The advantages ofthe various array arrangements described herein are increasingly important as horizontal layout dimensions are reduced, and as lateral parasitic capacitance consequently becomes a more dominant portion of the total load capacitance on each bitiine. While the invention has been largely described with respect to the embodiments set forth above, the invention is not necessarily limited to these embodiments. For example, additional crossovers may be employed which laterally interchange each of the bitiine pairs more than the one or two times per bitiine pair as described herein, but which nonetheless preserve the equivalence of the total lateral parasitic capacitance between the adjacent bitiine pairs, as described above. As an additional example, a neighboring conductive structure may or may not be fabricated using the same electrical interconnect level as the given differential pair in question. Moreover, while several ofthe embodiments have been described in the context of a SRAM array, it should be appreciated that such an array is useful for a variety of circuit blocks, such as cache memories, register files, buffers, and others, and is not merely useful for circuit blocks known commercially as "static RAMs". Accordingly, other embodiments, variations, and improvements not described herein are not necessarily excluded from the scope ofthe invention. which is defined by the following appended claims.

Claims: WHAT IS CLAIMED IS: 1. An integrated circuit comprising: a first pair of conductive interconnection lines for communicating a differential signal therebetween, said first pair comprising a first line and a second line, each disposed substantially adjacent to and parallel to the other and each fabricated substantially from a given interconnect level: and an neighboring conductive stmcture being generally disposed adjacent to the first pair of conductive interconnection lines; wherein the first and second lines ofthe pair of conductive interconnection lines laterally interchange in at least one location such that the first line is disposed adjacent to and at a given spacing from the neighboring conductive stmcture for a length substantially equal to a length that the second line is disposed adjacent to and at the given spacing from the neighboring conductive structure. 2. An integrated circuit as in claim 1 wherein the neighboring conductive stmcture is fabricated from the given interconnect level. 3. An integrated circuit as in claim 1 wherein the neighboring conductive stmcture is fabricated from an interconnect level different from the given interconnect level. 4. An integrated circuit as in claim 2 wherein the neighboring conductive stmcture comprises a second pair of conductive interconnection lines. 5. An integrated circuit as in claim 2 wherein the neighboring conductive stmcture comprises a second pair of conductive interconnection lines and a single conductive interconnect line, said second pair of conductive interconnection lines separated from the first pair of conductive interconnection lines by the single conductive interconnection line. 6. An integrated circuit as in claim 5 wherein the single conductive interconnect line comprises a power supply interconnect line. 7. An integrated circuit comprising: a plurality of interconnect line pairs for communicating a respective plurality of differential signals thereon, said plurality of interconnect line pairs having even- numbered interconnect line pairs and odd-numbered interconnect line pairs; wherein each of said odd-numbered interconnect line pairs comprises a first interconnect line, and a second interconnect line disposed generally parallel to, adjacent to, and at a certain spacing from the first interconnect line, said first and second interconnect lines together traversing a certain length across the integrated circuit; a first cross-over structure providing a lateral interchange ofthe first and second interconnect lines, thereby reversing the relative position ofthe first interconnect line with respect to the second interconnect line, wherein the crossover stmcture is disposed at a position along the first and second interconnect lines corresponding to one-half of the certain length; wherein each of said even-numbered interconnect line pairs comprises a third interconnect line, and a fourth interconnect line disposed generally parallel to, adjacent to, and at a certain spacing from the third interconnect line, said third and fourth interconnect lines together traversing across the integrated circuit for a length equal to the certain length; a second cross-over stmcture providing a lateral interchange ofthe third and fourth interconnect lines, thereby reversing the relative position ofthe third interconnect line with respect to the fourth interconnect line, wherein the crossover stmcture is disposed at a position along the third and fourth interconnect lines corresponding to one-fourth ofthe certain length; a third cross-over stmcture providing a lateral interchange ofthe third and fourth interconnect lines, thereby reversing the relative position ofthe third interconnect line with respect to the fourth interconnect line, wherein the crossover structure is disposed at a position along the third and fourth interconnect lines corresponding to three-fourths ofthe certain length. 8. An interconnect stmcture as in claim 7 further comprising a plurality of power busses, each of which is disposed parallel to and between an even-numbered interconnect line pair and an odd-numbered interconnect line pair. 9. An interconnect stmcture as in claim 7 wherein each even-numbered interconnect line pair is disposed directly adjacent to an odd-numbered interconnect line pair, with no intervening conductive interconnect stmcture residing therebetween. 10. An interconnect stmcture as in claim 7 wherein a portion ofthe first interconnect line, bςing disposed on a given side ofthe first cross-over stmcture. is collinear with a portion of the second interconnect line disposed on a side of the first cross-over structure opposite the given side. 11. An interconnect stmcture for communicating a plurality of differential signals across an integrated circuit, comprising: a plurality of interconnect line pairs comprising even-numbered interconnect line pairs and odd-numbered interconnect line pairs, each of said plurality of interconnect line pairs traversing a certain length across the integrated circuit, each of said plurality of interconnect line pairs comprising a respective first interconnect line and a respective second interconnect line disposed generally parallel to. adjacent to, and at a certain spacing from the respective first interconnect line; wherein each ofthe odd-numbered interconnect line pairs comprises a first cross-over disposed at a position along a respective length thereof corresponding to one-half ofthe certain length; wherein each ofthe even-numbered interconnect line pairs comprises a second cross-over disposed at a position along a respective length thereof corresponding to one- fourth of the certain length, and further comprises a third cross-over disposed at a position along a respective length thereof corresponding to three-fourths ofthe certain length; and wherein each of said first, second, and third crossovers provides a lateral interchange in the relative position ofthe respective first and second interconnect lines. 12. An interconnect stmcture as in claim 1 1 further comprising a plurality of power busses, each of which is disposed generally parallel to and between an even-numbered interconnect line pair and an odd-numbered interconnect line pair. 13. An interconnect stmcture as in claim 1 1 wherein each even-numbered interconnect line pair is disposed directly adjacent to an odd-numbered interconnect line pair. with no intervening interconnect stmcture residing on an interconnect level on common with said plurality of interconnect line pairs. 14. An interconnect stmcture as in claim 11 wherein the plurality of interconnect lines comprise bitlines within a memory array. .15. An interconnect structure as in claim 1 1 wherein the plurality of interconnect lines comprise global signal lines for communicating between circuit blocks. 16. An SRAM memory array within an integrated circuit comprising: a plurality of bitiine pairs comprising even-numbered bitiine pairs and odd-numbered bitiine pairs, each of said plurality of bitiine pairs traversing a certain length across the memory array, each of said plurality of bitiine pairs comprising a respective first bitiine and a respective second bitiine disposed generally parallel to, adjacent to, and at a certain spacing from the respective first bitiine; wherein each ofthe odd-numbered bitiine pairs comprises a first cross-over disposed at a position along a respective length thereof corresponding to one-half of the certain length; wherein each ofthe even-numbered bitiine pairs comprises a second cross-over disposed at a position along a respective length thereof corresponding to one-fourth ofthe certain length, and further comprises a third cross-over disposed at a position along a respective length thereof corresponding to three-fourths ofthe certain length; and wherein each of said first, second, and third crossovers provides a lateral interchange in the relative position ofthe respective first and second bitlines. 17. An SRAM memory array as in claim 16 further comprising a plurality of power busses, each of which is disposed generally parallel to and between an even-numbered bitiine pair and an odd-numbered bitiine pair. 18. An SRAM memory array as in claim 16 wherein each even-numbered bitiine pair is disposed directly adjacent to an odd-numbered bitiine pair, with no intervening interconnect stmcture therebetween.

Inventors: MOENCH JERRY D, MOENCH, JERRY, D.
Applicants: ADVANCED MICRO DEVICES INC, ADVANCED MICRO DEVICES, INC.
Application year: 1996
Main classification: G11C7
IPC codes: G11C7, G11C11