PROTECTIVE CIRCUIT FOR SERIES-CONNECTED POWER SEMICONDUCTORS

Abstract: An overvoltage protection device (SK) of a transient protection type in a series-connection of an arbitrary number of power semiconductors (T1, D1), intended to reduce the risk of overvoltage across a power semiconductor in a chain (P1,...PN) of series-connected power semiconductors (T1, D1), wherein the overvoltage protection device (SK) comprises at least one capacitor (C) and wherein the overvoltage protection device (SK) is activated when the voltage across the power semiconductor (T1, D1) exceeds the specified voltage level (Vprot), whereby the task of said capacitor (C) is to limit the voltage derivative (dVCE/dt) across the power semiconductor when the voltage across the power semiconductor exceeds the specified voltage level (Vprot). The overvoltage protection device limits too high a voltage growth across individual power semiconductors in the chain.

Description: Protective circuit for series-connected power semiconductors TECHNICAL FIELD The present invention relates to an overvoltage protection device of transient protection type intended to reduce the ris of overvoltage across a power semiconductor, which among other things may occur in connection with turn-on and turn-off of the power semiconductor, when a plurality of such power semiconductors have been connected in series to build up a high voltage by voltage division. BACKGROUND ART Self-com utated converters are used at present in a number of applications, for example in static converters for motor drives, switched supply devices, UPS systems, etc. In such applications, normally an individual power semiconductor is utilized for building up the relatively high voltages which occur. In certain applications, however, it is desired to switch off or on such a high voltage that this cannot be managed with a single power semiconductor. Power semiconduc¬ tors then have to be capable of being series-connected with a good voltage division. As examples of applications in which it may be of interest to series-connect power components may be mentioned converters for high-voltage motors, traction motor or high-voltage generators. Further, there are applications within distribution and transmission of electric power wherein very high voltages (typically 20-500 kV) are switched on or off. High-voltage converters are used here, inter alia, as controlled rectifiers and inverters for transmission of high- voltage direct current (HVDC) . It is considered that self- commutated converters of a voltage-source type will be used to an increasing extent in transmission and distribution appli- cations. Besides in HVDC there may be mentioned, as examples, converters for reactive power compensation, phase angle con¬ trol, improvement of the network quality (e.g. compensation of harmonics induced by non-linear loads) , for transmission of power between the phases during a phase error, etc. In more general terms, these converters may be used to control power flows, provide better availability and higher network quality in existing AC systems. In self-commutated converters there are used gate turn-off power semiconductors of GTO thyristor type or controllable power semiconductors of transistor type, for example IGBT, MOSFET, bipolar transistors (BJT) , or Darlington transistors. In the higher power range, especially GTO thyristors and IGBT transistors, respectively, are at present the most interesting components. IGBT transistors are predicted to handle increa¬ singly larger powers and successively to replace or supplement GTO thyristors in converters intended for high powers and high voltages. In series connection of power semiconductors, which are in the form of components as IGBT or GTO, however, it is difficult to obtain a uniform voltage distribution between the components. This applies especially to turn-off of the current, but problems with voltage division may also arise during blocking and turn-on. For the IGBT case, a good voltage division is also required during a possible short circuit of a DC inter¬ mediate-link capacitor since the IGBT builds up voltage and limits the current. Taken together, this has contributed to the fact that the number of commercial applications using series-connected power components of the GTO or IGBT types is still very small. The problems in connection with turn-off arise from the fact that the series-connected power components tend not to build up voltage completely synchronously. Certain components tend to turn off earlier than others, which easily causes over- voltages to arise for those components which turn off early in a valve, by valve being meant the chain of series-connected components . Similar problems may also arise during turn-on of the power components. Certain components turn on later than others, which may lead to a brief overvoltage across the components which turn on later. However, the problems are normally smaller in the case of turn-on of the valve than in the case of turn-off of the same. Further, during blocking of the valve, certain components may have a lower leakage current than others, which results in higher voltage across these components in a valve chain. However, this problem is normally relatively simple to over¬ come with a resistive voltage divider arranged in parallel with each power component in the chain. During short-circuiting of the dc intermediate link capacitor, in the IGBT case, component variations will result in certain IGBTs starting to build up voltage at a lower current than others, which leads to an uneven division of the voltage and problems with overvoltages on certain components. In forced-commutated converters of a voltage-source type, there is normally also an antiparallel diode in parallel with the turn-off power semiconductor (e.g. IGBT or GTO) . This diode carries current in the opposite direction to the direction in which the turn-off power semiconductor carries current in the chain of series-connected power semiconductors (Fig. 1) . When the mentioned diode turns off and builds up voltage, problems with voltage division may arise also in this case. The mentioned antiparallel diode constitutes, per se, a power semiconductor which must be protected against overvol¬ tages caused by an uneven division of the voltage across the series-connected diodes in the chain. In this document, the concept series-connected power semiconductors also comprises power semiconductors connected in parallel across the con- trollable and turn-off power semiconductors. Normally, however, the voltage division during turn-off of the power semiconductors (GTO, IGBT) is the case which is most difficult to handle . In GTO applications (not series connection of power semicon¬ ductors) , it is common to apply a so-called RCD snubber in parallel with the GTO. Figure 2 shows an example of an RCD snubber, where DU designates a drive unit, Tl a GTO, Dl an antiparallel diode, and SN comprises the snubber. Such a snubber is intended to limit the speed of the voltage growth across the GTO, which increases the current handling capacity of the GTO and reduces the turn-off losses thereof. An RCD snubber also improves the voltage division during series connection of such components. To obtain a good voltage divi¬ sion, however, a capacitor included in the snubber must be chosen to be large, which normally means that the snubber losses become too large to handle. The patent document SE 8801140-8 discloses a method in which, by introducing indivi- dual delays in the control-pulse generation, the voltage divi¬ sion may be improved without having to choose a very large snubber capacitor because of that. The method is based on the temperature of an overvoltage protection device, in this case a varistor, being measured invididually for each thyristor and on a signal, based on the measurement, being used to achieve an individual delay of the turn-off time of the thyristor. In IGBT applications (not series connection) , it is common to use simpler types of snubber devices or to exclude the snubber completely. The reason for this is that the IGBT can normally handle a faster voltage growth during turn-off than the GTO. However, it is often suitable to have some type of overvoltage protection device to limit the voltage peak which always occurs during commutation of a current in a circuit with a certain inductance (see, e.g. "Protection of IGBT Modules in Inverter Circuits", EPE Journal, Vol. 1, No. 1, July 1991) . One example of such a protection device of the type mentioned, which is effective with respect to overvoltages, is a clamping capacitor which feeds back its charge to a dc intermediate link (Fig. 3) . This type of snubber does not limit the voltage build-up across the IGBT until it has reached the value to which the clamping capacitor is charged. This causes the losses in the snubber to become very low while at the same time overvoltages in connection with turn-off are effectively limited. During series connection of IGBTs, however, some type of over- voltage protection is needed, which prevents individual com¬ ponents, which turn off earlier than others, from building up too high a voltage. A natural choice for achieving a passive overvoltage protection device is then to use the same type of snubber as for GTO applications, namely, an RCD snubber. However, the losses in such an RCD snubber easily become relatively great since it is normally difficult to cause all the series-connected IGBTs to turn off at exactly the same time . An overvoltage protection device may also be active. By an active overvoltage protection device we mean that the protec¬ tion device influences the control of the component such that it tends to increase its conductivity again if the voltage across the component rises too high. A natural choice to achieve an active overvoltage protection device for an IGBT is quite simply to connect a Zener diode in series with a diode between the collector and the gate (Fig. 4) . This method is described, for example, in "Switching Voltage Transient Protection Schemes for High Current IGBT Modules", IEEE 1994. The disadvantages of this concept, according to the authors of the article, are that the stray capacitances in the protective components may influence the turn-off process negatively and that the protective method increases the turn-off losses during turn-off of normal currents. Active protection devices also exist in other forms. Such a type is, for example, an active snubber. An active snubber comprises, for example, a capacitor and a resistance between the collector and the gate on an IGBT (Fig. 5) and the object thereof is to limit the voltage derivative during turn-on and turn-off, respectively. This technique is described, for example, in "An Investigation of the Drive Circuit Require- ments for the Power Insulated Gate Bipolar Transistor (IGBT)", IEEE Trans on Power Electronics, Vol. 6, No. 2 , April 1991. SUMMARY OF THE INVENTION The presents invention relates to an overvoltage protection device of a transient protection type intended to reduce the risk of overvoltage across a power semiconductor in a chain of series-connected power semiconductors, wherein the overvoltage protection device comprises at least one capacitor and wherein the overvoltage protection device is activated when the vol¬ tage across the power semiconductor exceeds a definite voltage level (Vp ro t) • At each time when the protection device is activated, the above-mentioned capacitor is passed by a current, the capaci¬ tor thus being charged. During a protective incident, the vol¬ tage across the power semiconductor rises above the voltage level Vp ro t. Approximately, the voltage across the power semiconductor Vcε(t) = V pro t + Q(t)/C, where Q(t) is the charge which passes through the capacitor with its capacitance C during the protective action. The task of the capacitor dV CE mentioned is to limit the voltage derivative ~ 7 ~~ across the power semiconductor when the voltage across the power semiconductor exceeds the specified voltage level Vprot- The invention makes possible a series connection of an arbi¬ trary number of power semiconductors because the overvoltage protection device according to the invention limits too high a voltage growth across individual components in the chain. The overvoltage protection device may, of course, be connected so as to protect a module comprising at least one power semi¬ conductor component, wherein several modules are connected in series to build up any high voltage occurring in a valve chain. The overvoltage protection device may be connected as a passive protection device or as an active protection device. There is also a possibility of combining the two types of protection devices to protect the same component or the same module. Connected as a passive protection device, the device is connected in parallel across the power semiconductor or the power semiconductor module (Fig. 6) . A power semiconductor which is comprised in the protected module may then be of an arbitrary type (e.g. IGBT, GTO, MCT, a diode, or a combination thereof) . Connected as an active protection device, the device is connected between the collector and the gate/base of a controllable power semiconductor in a power semiconductor module (Fig. 7) . The controllable power semiconductor may then only be of a transistor type (e.g. IGBT, MOSFET, BJT, or Darlington transistor) . Further, the overvoltage protection device comprises a diode which is series-connected to the capacitor and which prevents the capacitor from being discharged completely during turn-on of a power semiconductor in a module when the module starts carrying current. A voltage controller attends to the deter¬ mination as to the voltage level to which the capacitor is discharged after the activation of the overvoltage protection device. The above-mentioned capacitor and protective diode in the overvoltage protection device are mutually connected in series. The protective diode is oriented so as to prevent discharge of the capacitor when the power semiconductor module is in the conducting state. Usually, the voltage controller which controls the voltage across the capacitor is connected such that the capacitor, the voltage controller, and the power semiconductor module form a closed circuit (Fig. 8), which results in the voltage con¬ troller only being active when the power semiconductor module is turned on and the voltage across the power semiconductor module is low. It is also possible to connect the voltage controller such that the capacitor and the mentioned controller form a closed circuit (Fig. 9), which results in the voltage controller being active independently of the state of the power semi¬ conductor module. What otherwise characterizes the invention will become clear from the appended claims. In the following, the term power semiconductor will also be used for designating a power semiconductor module, whereby individual power semiconductors comprised in the module are denoted by the term components. The advantage of a series connection of power semiconductors, in which each individual power semiconductor is protected by means of an overvoltage protection device according to the invention, is primarily a reduced risk of overvoltage across an individual power semiconductor device during turn-on and turn-off of a component in the module, and during a short- circuit process. This means that the requirements for syn- chronism, above all during turn-off (but also during turn-on) , become lower and more reasonable. The requirements that all the power semiconductors behave largely identically during turn-off, turn-on and short-circuiting therefore also become more moderate, which, among other things, reduces the requirements for component control. In addition, greater differences in the respective drive circuits can be accepted. Otherwise, there could be a risk of having to select out components which behave largely identically and trimming drive circuits, respectively. This may be difficult in an industrial application, where, in addition, after some time in use, it may be necessary to replace defective components or drive circuits. The advantage of the passive overvoltage protection device described in the invention compared with a conventional RCD snubber according to Figure 2 may be summarized as follows : - the snubber losses are much lower for the same value of the capacitor C, since C does not have to be completely discharged. The advantage of the active overvoltage protection device described in the invention compared with a conventional active protection device comprising a Zener diode in series with a diode connected between the collector and the gate (Fig. 4) can be summarized as follows: - the overvoltage protection device according to the invention is short-circuit proof, that is, a fault in a Zener diode cannot lead to short circuit of the IGBT, - the IGBT can be utilized, from the dc point of view, to its full voltage since the protection device only limits the voltage derivative to a lower level, - during the protective action, the current need not pass through high-voltage Zener diodes or transient protective diodes, which increases the reliability. In addition, in these components, such non-idealities as series resistance and stray capacitance, which have a negative influence on the protective function, are dispensed with, - combined with a current amplifier, the stresses in the pro¬ tective components may be further reduced. The physical size of the protection device can then be additionally reduced, - combined with an active snubber, a fast response of the power semiconductor is obtained when the level of protection is passed. The advantage of the combined passive and active overvoltage protection device described in the invention, compared with an active protection device only, can further be summarized in that by the introduction of several levels of protection, the passive protection device in a valve may, for example, take care of differences in tail current of high-voltage IGBTs and rapidly reduce the voltage to a lower level after a protective action, which improves the voltage division in the valve immediately after a turn-off. BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 shows a chain of conventional series-connected power semiconductor modules comprising antiparallel diodes across a controllable or turn-off power semiconductor device. Figure la illustrates a converter with six valve branches as an example of a field of use where an overvoltage protection device according to the invention is utilized during series connection of power semiconductors in the respective position P N . Figure lb shows a position PN which comprises a power semi¬ conductor module which is intended to be protected by means of an overvoltage protection device according to the invention. Figure 2 illustrates a conventional snubber, which is used, for example, in GTO applications, a so-called RCD snubber. Figure 3 shows a conventional feedback snubber of clamping type, used to prevent overvoltages during turn-off of an IGBT. Figure 4 shows a possibility of an active overvoltage protec¬ tion device for an IGBT. Figure 5 shows a so-called active snubber for an IGBT. Figure 6 shows the overvoltage protection device of transient protection type according to the invention, connected as a passive protection device. Figure 7 shows the overvoltage protection device of transient protection type according to the invention, connected as an active protection device. Figure 8 shows the overvoltage protection device according to the invention connected as a passive protection device, wherein the voltage controller is connected such that the capacitor, the voltage controller and the power semiconductor form a closed circuit . Figure 9 shows the overvoltage protection device according to the invention connected as a passive protection device, wherein the voltage controller is connected such that the capacitor and the voltage controller form a closed circuit . Figure 10 shows typical current and voltage waveforms across two series-connected components during a turn-off process, wherein the overvoltage protection device according.to the invention is connected as a passive protection device. Figure 11 shows typical current and voltage waveforms across two series-connected power semiconductors during a turn-off process, wherein the overvoltage protection device according to the invention is connected as an active protection device. Figure 12a shows an active overvoltage protection device according to the invention combined with an active snubber. Figure 12b shows a modification of an overvoltage protection device with two voltage controllers. Figure 12c shows the level of protection of both the active snubber and the active overvoltage protection device. The overvoltage protection device can be given two levels of protection according to the invention. Figure 12d shows a resistance in a snubber in an active over¬ voltage protection device, wherein the snubber resistance changes depending on the current direction through the snubber. Figure 13 shows an active overvoltage protection device accor- ding to the invention, wherein the current signal is amplified in a transistor. Figure 14 shows typical current and voltage waveforms across two series-connected power semiconductors during a short- circuit process, wherein the overvoltage protection device according to the invention is connected as in Figure 13. Figure 15 shows different levels of protection for an over¬ voltage protection device according to the invention, connected as a combined active and passive protection device. Figure 16 shows an embodiment of a combined active and passive overvoltage protection device according to the invention. Figure 17 shows typical current and voltage waveforms across two series-connected power semiconductors during a turn-off process, wherein the overvoltage protection device according to the invention is connected as in Figure 16. Figure 18 shows an example of a drive unit for control of power semiconductors in a power semiconductor module. DESCRIPTION OF THE PREFERRED EMBODIMENTS The invention will be described in the following with reference to a number of embodiments of the invention. As one example of a field of use of the invention there is schemati¬ cally shown a converter according to Figure la, a so-called six-pulse bridge with six valve branches Vχ-V6, wherein each valve comprises a chain of series-connected power semiconduc¬ tors. In this case the converter is a voltage-source, self- commutated three-phase converter. The bridge is to be connected to a three-phase alternating-voltage network at points R, S, T via the inductors LR, LS, L and the dc ter¬ minals P and N, which are connected to a capacitor C • According to the above, each individual valve branch Vi comprises an arbitrary number of positions Pi, .., PN, wherein each position comprises a power semiconductor module with at least one power semiconductor component Tl which is to be protected with an overvoltage protection device SK according to the invention. Further, Figure lb shows a position PN, which in this case comprises a power semiconductor module which is made up of an IGBT component Tl together with an antiparallel diode Dl, which constitute power semiconductors which are to be protected against overvoltages . The IGBT is controlled by a drive circuit DU connected between the gate and the emitter of the IGBT. In parallel across the IGBT and the antiparallel diode, respectively, there is also connected a resistance Rs, which serves as a voltage divider when the valve is in the blocked state. To protect each individual power semiconductor module and hence individual power semiconductor components Tl, T2, ... and Dl, D2, ..., respectively, comprised therein, in the series of modules against overvoltage which may occur in connection with nonsynchronous turn-on or turn-off of the power semiconductors in the series and hence give rise to impermissible voltage levels across any of the power semicon¬ ductor modules in the series, each power semiconductor is equipped with an overvoltage protection device SK according to Figure 6. In Figure 6, the protection device is connected as a passive protection device and is connected to the collector and emitter, respectively, of an IGBT. The protection device may also be connected as an active protection device, whereby the protection device in the example is connected between the collector and the gate, respectively, of the IGBT. This is shown in Figure 7. The overvoltage protection device SK may be configured in several different ways. Common to all the variants is that the protection device comprises a charged capacitor C and a pro- tective diode D, which according to Figure 8 are disposed in series with each other, wherein the protective diode D is oriented such that it prevents discharge of the capacitor C when the power semiconductor Tl is in its conducting state. The capacitor C is normally always kept charged by a current which periodically flows through the diode D. If during turn- off of the chain of power semiconductors, one power semicon¬ ductor Tl turns off earlier than the others in the same chain, the overvoltage which briefly occurs across the power semicon- ductor will force current through the diode D and hence charge the capacitor C, which thereby protects the associated power semiconductor module comprising the components Tl and Dl from being subjected to overvoltage. During turn-on of the series, on the other hand, there is a risk that a power semiconductor Tl turns on somewhat later than the others, whereby this power semiconductor Tl runs the risk of being exposed to overvoltage for a brief space of time. Also in this case, current is carried through the diode D and charges the capacitor C, whereby the risk of overvoltage across the associated power semiconductor module is minimized. The task of the diode D, which lies in series with the capaci¬ tor C, is to prevent a capacitor C from being completely dis¬ charged during turn-on of the associated power semiconductor Tl . A voltage controller S attends to the determination as to to which voltage level the capacitor is discharged after the activation of the overvoltage protection device SK. Usually, the voltage controller S, which controls the voltage across the capacitor according to Figure 8, is connected such that the capacitor C, the voltage controller S and the power semiconductor Tl form a closed circuit, which means that the voltage controller is only active when the power semiconductor turns on and the voltage across the power semiconductor is low. This connection is normally to prefer. From the dc point of view, the power semiconductor can then be utilized to its highest voltage level, independently of the voltage where the voltage controller starts operating. In addition, a fault in the voltage controller S cannot lead to the power semiconduc¬ tor being short-circuited, which is a very important property in a protection device intended for series-connected compo¬ nents designed for high voltages. The current in the loop which comprises the voltage controller S can be limited by means of a resistor R in the loop. It is also possible to connect the voltage controller S according to Figure 9 such that the capacitor C and the con- troller form a closed circuit, which means that the voltage controller is active independently of the state of the power semiconductor Tl . This has the advantage that the controller can be realized with components with a low current-handling capacity. Also in this case, the voltage controller S may comprise a series resistor R. In an additional modification of the invention, the voltage controller S is active only under the influence of an external control signal or, inversely, the voltage controller can be deactivated under the influence of an external control signal. In one modification of the voltage controller S, this compri¬ ses a semiconductor component Z which comprises a P-N junction with Zener characteristic (Fig. 8, Fig. 9), wherein the resis- tance of the semiconductor device is reduced at the voltage where the voltage controller S is activated. Such diodes Z are normally referred to as Zener diodes or transient protective diodes . If the voltage controller S is to handle large average powers, it may be advantageous to provide the voltage controller with high-voltage transistors, as for example MOSFET or IGBT, driven in the linear range. Zener diodes may then be used to control at which voltage the transistor is to start conducting and controlling the voltage. Connected as a passive protection device, during turn-off of the power semiconductor Tl, normally the main part of the current through the power semiconductor will be commutated over to the capacitor C, in case the voltage exceeds the protective level Vprot • Tne voltage derivative across the power semiconductor is then reduced to a lower value. The voltage derivative is determined by the magnitude of the current which is commutated over and by the magnitude (Fig. 10) . To prevent a large voltage overshoot VP from occurring when the current is commutated over to the capacitor, it is of the utmost importance that the current loop which is formed from the power semiconductor Tl, the diode D, and the capa¬ citor C has the lowest possible inductance. Figure 10 shows current and voltage curves as functions of the time with the shown protective level Vprot an c- mean level of the direct current VDC of the converter. The voltage across the respec- tive semiconductor module is designated VQEI and VQE2 (Fig. 1) • With the overvoltage protection device SK connected as an active protection device, normally only a fraction of the current through the power semiconductor Tl will commutate over to the capacitor C. However, this current influences the gate such that the conductivity of the power semiconductor increa¬ ses, which leads to a reduction of the voltage derivative to a lower level. For an IGBT, this makes it possible to reduce the voltage derivative to a level which is relatively independent of the current through the IGBT as soon as the voltage has exceeded the protective level (Fig. 11) . To reduce the response time of the protection device SK, it may be suitable to combine the active protection device with an active snubber which comprises a capacitor CSN an a resis¬ tance RSN (Figs. 12a and 12c) . The reason is that an active snubber limits the voltage derivative during both turn-on and turn-off, which means that the IGBT is in its controllable range when the protective level is passed, which causes the power semiconductor Tl to react rapidly to the protective signal. If it is desired to limit the voltage derivative in one way during a turn-on process and in another way during a turn-off process, the resistance RSN in the snubber in an active overvoltage protection device may be replaced by different parallel-connected resistances which, by means of diodes, provide different resistances for the RSN depending on the current direction through the snubber SN (Fig. 12d) . In a variant of an active overvoltage protection device, the protective circuit may be allowed to trip at two different protective levels, at the voltages V pr otl and V pr ot2, whereby the voltage derivative is reduced in two steps according to Figure 12c. This may be realized, for example, as shown in Figure 12b, by connecting a series-connected Zener diode Zl and capacitor Cl in parallel with the capacitor C of the protective circuit . To further reduce the need of current between the collector C and the gate G in an active protection device, amplification of the current signal may be introduced. This has the advan¬ tage that the influence of inductance on the circuit between the collector and the gate is reduced and the size of the components of capacitors and Zener diodes is reduced. An example of an overvoltage protection device combined with a current amplifier is shown in Figure 13. An active protection device with current amplification is further of interest if it is desired that the protection device is to be activated for a longer period of time (e.g. 10 μs) without the voltage, because of this, rising to a level v SOA which is harmful to the component. Short-circuiting of the intermediate-link capacitor in a voltage-source converter is one such case where this type of overvoltage protection device is of interest to series-connected IGBTs . During such short-circuiting, the current rises very rapidly up to the level where the IGBTs themselves start building up voltage and limiting the current . The current level at which the IGBTs start building up voltage may, however, vary from one com¬ ponent to another. This may be due to differences in the manufacture of the IGBTs (e.g. variation in threshold voltage) or other external factors such as variation in temperature or variation in driving voltage from the respective drive circuit. However, certain components tend to build up such a high voltage that the overvoltage protection device is acti- vated. In this case, a certain time may elapse before the short circuit has been detected and acted upon, whereby the short-circuit protection device may need to be active for a comparatively long time, for example 10 μs (Fig. 14) . This can be compared with a normal turn-off, where the protective action may be of the order of magnitude of 0.1-1 μs . As mentioned previously, the protection device SK may also advantageously be connected as a combined active and passive protection device. In this case, the respective protection devices may be allowed to become active at different voltage levels. A suitable way is to allow the active protection device to become active at a higher voltage level than the passive (Fig. 15) . To prevent the passive protection device from building up too large a proportion of the current at the initial stage (i.e. during the time when the active protection device is activated) , a resistance R2 may be introduced in the passive protection device in series with the diode D2 and the capacitor C2 (Fig. 16) . Such a connection means (e.g. during turn-off of a high-voltage IGBT) that the active protection device may be allowed to protect the component against too high a transient voltage during that part of the turn-off process when the current is still high. When the current through the IGBT has dropped, the passive protection device may be activated and reduce the voltage across the component to another lower voltage level, determined by the protective level for the passive protection device. In the example in Figure 15, the diode D of both the passive protection device (SK) and the active protection device (SK) and the voltage controller S have been combined and shown as one component D S ]ςp and D S k a , respectively, which, of course, is not necessary. Normally, high-voltage IGBTs exhibit a considerable so-called tail current, which may be different from one component to another. The tail current is a relatively low current (normally only a few per cent of the operating current) which decays largely exponentially with the time. This tail current may, however, influence the voltage division between different components for a long time after turn-off. The passive protec¬ tion device may then compensate for differences in tail current and reduce differences in voltage level caused by differences in these currents. This means that, soon after turn-off, the power semiconductor may be caused to resume a lower voltage level (Fig. 17), which may increase the service life of the power semiconductor Tl . It has proved that power semiconductors which are subjected to high dc stresses for long spaces of time run an increased risk of breakdown. A drive unit according to the prior art is shown in Figure 18, where the drive unit DU is used for controlling the power semiconductor Tl according to the different embodiments of the invention described above. The control signal to the drive unit controls two switches SI and S2, respectively, which alternately open and close and thus give the signal at the output G such a potential with the aid of the voltage sources VI and V2 that the controlled power semiconductor is set into a conducting or turned-off state.

Claims: CLAIMS 1. A semiconductor connection comprising at least two series- connected power semiconductors (Tl, T2, ... Dl, D2, ...), wherein individual power semiconductors are protected against overvoltage by means of at least one overvoltage protection device (SK) , characterized in that the overvoltage protec¬ tion device (SK) comprises at least one capacitor (C) and that the overvoltage protection device is activated at a definite voltage level (Vp ro t) • 2. A semiconductor connection according to claim 1, characterized in that the task of said capacitor (C) is to l ,i.mi.t the voltage deri*vati.ve d ,c. E across the power semicon- ductor (Tl, T2, ... Dl, D2, ...) when the voltage across the power semiconductor exceeds the specified voltage level ( Vprot ) • 3. A semiconductor connection according to claim 1, characterized in that the overvoltage protection device (SK) is connected in parallel across that power semiconductor (Tl, T2, ... Dl, D2, ...) which is to be protected, the protection device thus being referred to as being passive. 4. A semiconductor connection according to claim 3, characterized in that the overvoltage protection device (SK) comprises a rectifier (D) which is connected in series with the capacitor (C) and which prevents the capacitor (C) from being discharged when the power semiconductor (Tl, T2, ...) is in the conducting state. 5. A semiconductor connection according to claim 3, characterized in that the overvoltage protection device (SK) comprises a voltage controller (S) which determines the vol- tage level to which the capacitor (C) is discharged after an activation of the overvoltage protection device (SK) . 6. A semiconductor connection according to claims 4 and 5, characterized in that said capacitor (C) and said voltage controller (S) and the power semiconductor which is to be protected are connected in series into a closed circuit . 7. A semiconductor connection according to claims 4 and 5, characterized in that said capacitor (C) and said voltage controller (S) form a closed circuit. 8. A semiconductor connection according to claim 1, characterized in that the overvoltage protection device (SK) is connected between the collector and the gate of a controll¬ able component comprised in that power semiconductor (Tl, T2, ... Dl, D2 ...) which is to be protected, the protection device thus be referred to as being active. 9. A semiconductor connection according to claim 8, characterized in that the overvoltage protection device (SK) comprises a rectifier (D) which is connected in series with the capacitor (C) and which prevents the capacitor (C) from being discharged when the power semiconductor (Tl, T2, ...) is in the conducting state. 10. A semiconductor connection according to claim 8, characterized in that the overvoltage protection device (SK) comprises a voltage controller (S) which determines the vol¬ tage level to which the capacitor (C) is discharged after an activation of the overvoltage protection device (SK) . 11. A semiconductor connection according to claims 9 and 10, characterized in that said capacitor (C) and said voltage controller (S) are connected in series and connected across the collector and the gate of a controllable component com¬ prised in that power semiconductor (Tl, T2, ...Dl, D2, ...) which is to be protected. 12. A semiconductor connection according to any of claims 8 to 11, characterized in that a current amplifier (A) amplifies the current through the capacitor (C) . 13. A semiconductor connection according to any of claims 8 to 12, characterized in that the overvoltage protection device (SK) is activated in at least two steps at different protec¬ tive levels (V pro tl an V pro t2) • 14. A semiconductor connection according to any of claims 1 to 13, characterized in that a snubber is connected in parallel across the overvoltage protection device (SK) . 15. A semiconductor connection according to claim 14, characterized in that said snubber comprises a capacitor (CSN) an d a resistance (RSN) connected in series. 16. A semiconductor connection according to claim 15, characterized in that the resistance (RSN) comprises a closed circuit which comprises at least one resistance and at least one diode to impart different resistance to (RSN) depen¬ ding on the direction of the current through the snubber. 17. A semiconductor connection according to any of claims 2 to 6 and any of claims 8 to 16, characterized in that the over¬ voltage protection device (SK) for the power semiconductor comprises both a passive protective circuit and an active protective circuit. 18. A semiconductor connection according to claim 17, characterized in that the active protection device is acti¬ vated at a higher voltage level than the passive protection device. 19. A semiconductor connection according to any of the pre¬ ceding claims, characterized in that the voltage controller (S) is active only under the influence of an external control signal. 20. A semiconductor connection according to any of the pre¬ ceding claims, characterized in that the voltage controller (S) comprises at least one semiconductor device (Z, Zl, D s k a , D skp) which comprises a p-n junction with Zener characteris- tic, wherein the resistance of the semiconductor device is reduced at the voltage level where the voltage controller (S) is activated. 21. A semiconductor connection according to claim 20, characterized in that the voltage controller (S) comprises at least one semiconductor of transistor type which starts carrying current when the voltage controller is activated. 22. A semiconductor connection according to claim 1, characterized in that the power semiconductor (Tl, T2, ...) is a controllable power transistor and comprises any of the types IGBT, MOSFET, BJT, or Darlington transistor. 23. A semiconductor connection according to claim 1, characterized in that the power semiconductor (Tl, T2, ...) is a gate turn-off thyristor and comprises any of the types GTO or MCT thyristor. 24. A semiconductor connection according to claim 1, characterized in that the power semiconductor comprises a controllable power transistor (Tl) or a gate turn-off thyristor (Tl) and at least one rectifier (Dl) connected in parallel across this.

Inventors: BIJLENGA BO, BIJLENGA, BO
Applicants: ABB RESEARCH LTD, BIJLENGA BO, ABB RESEARCH LTD., BIJLENGA, BO
Application year: 1996
Main classification: H02H9
IPC codes: H01L21, H01L27, H02H7, H02H9, H02M1, H02M7, H03K17