Spin polarized electron semiconductor source and apparatus utilizing the same

Abstract: There are provided on a substrate (2) a block layer (4) having an electron affinity smaller than that of the substrate (2), a p-type strained superlattice structure (6) having no lattice relaxation and operating as a generation region of spin polarized electrons and a surface layer (8) for accommodating a bending portion of the energy band. The superlattice structure (6) is formed of a multilayer in which a strained well layer (12) and a barrier layer (14) are alternately laminated plural times. The strained well layer (12) has a lattice constant greater than that of the substrate and a thickness equal to or less than a wavelength of electron wave, and the barrier layer (14) has a conduction band lower in energy than that of the strained well layer (12) and a thickness such that an electron in the conduction band can transmit based on tunnel effect. A difference in energy between the band for heavy holes and the band for light holes is further widened in the valence band of the superlattice structure (6) due to compressive stress in the strained well layer (12).

Description: Background of the Invention 1. Field of the Invention The present invention relates to a spin polarized electron semiconductor source and an apparatus utilizing the same, and more particularly, to improvement of spin polarization and quantum efficiency in the spin polarized electron semiconductor source. 2. Description of the Related Art The charged weak bosons couple only chirality-left quarks and leptons. In high energy interactions of massless limit, the chirality equals the helicity. A polarized electron beam, therefore, can control weak interactions in high energy experiments, and is expected to play important roles in experiments of e + e - linear colliders. In the experiments using polarized electron beams, in most cases, the sensitivities of the experiments increase proportionally to the square of the spin polarization degree. Therefore, a spin polarized electron source as a photocathode by which electrons having as high spin polarization as possible can be extracted is urgently required. Besides the degree of spin polarization, the amount of charge which can be extracted from the spin polarized electron source is important in the collider. Therefore, it is desirable for a spin polarized electron semiconductor source to satisfy a spin polarization close to 100 % for electrons having an aligned spin and a high quantum efficiency for a large current. As such a spin polarized electron source for extracting spin polarized electrons, an example in which the band structure of a bulk semiconductor is utilized is described in a paper (Solid State Communication, Vol. 16, p. 877, 1975) by G. Lanpel et al. In this spin polarized electron semiconductor source, a multilayer in which Cesium (Cs) layers and oxygen (O) layers are alternately laminated is deposited on the surface of a p-type GaAs semiconductor to produce a negative electron affinity. Electrons having a maximum spin polarization of 50 % can be extracted from the semiconductor surface by irradiating circularly polarized laser beam having an energy substantially equal to the forbidden band of GaAs. In the band structure of the GaAs semiconductor, a band for heavy holes and a band for light holes are degenerated in the valence band and therefore a ratio of electrons having a downward spin and electrons having an upward spin is 3 : 1 because of difference in transition probability when electrons are excited from these bands to the conduction band. For this reason, the polarization of 50 % at a maximum can be obtained. In order to obtain a further higher polarization close to 100 %, it is necessary to remove the degeneracy of the heavy hole band and the light hole band in the valence band. For this purpose, the spin polarized electron sources utilizing strained crystal or a short period of a semiconductor superlattice structure are proposed. As an example of a spin polarized electron semiconductor source utilizing strained crystal there is the paper (Physics Letters A., Vol. 158, p. 345, 1991) by T. Nakanishi et al., for example. Fig. 1A shows the structure of such a spin polarized electron semiconductor source utilizing strained crystal. In the example, a lattice relaxation layer 102 of p-type GaPAs which has a lattice constant greater than that of a p-type GaAs substrate 101 and no lattice relaxation is provided on the substrate 101, and a thin strained layer 103 of p-type GaAs in which the lattice relaxation is not generated is provided on the lattice relaxation layer 102. A compressive stress acts due to the strain in a direction along the plane in the uppermost GaAs strained layer 103 to align the lattice of the strained layer 103 with the lattice of the relaxation layer 102. As a result, the degeneracy of the heavy hole band and the light hole band is removed in the valence band so that the heavy hole band is positioned higher in energy than the light hole band. Therefore, if the energy of exciting light is chosen to be equal to an energy from the heavy hole band to a conduction band, i.e., a forbidden band energy, electrons are excited only from the heavy hole band so that the electrons having completely aligned spin can be obtained. In this manner, the spin polarization of 100 % ought to be achieved in theory. However, the spin polarization of extracted electrons is lower than 100 % in actual because of extension of bands by thermal energy and spin scattering in the strained crystal. As a result of an experiment that the spin polarization of electrons extracted from the surface in which an alternate lamination multilayer of Cs and O is formed on the strained layer 103 is measured, a high polarization of 80 % or above was obtained. On the other hand, an example of a spin polarized electron semiconductor source device using a superlattice structure of a short period is described in, for example, a paper (Physical Review Letters, Vol. 67, p. 3294, 1991) by Omori el at. The structure of the electron semiconductor source device using the superlattice structure is shown in Fig. 1B. On a substrate 101 of p-type GaAs, there is sequentially formed a buffer layer 104 of p-type GaAs and a block layer 105 of p-type AlGaAs having a wide forbidden band. The buffer layer 104 is formed to provide a flat surface and the block layer 105 is formed to prevent electrons excited in the substrate 101 from going into a superlattice structure 110. The superlattice structure 110 having a short period is formed on the block layer 105. In the superlattice structure, a well layer 112 of p-type GaAs having a thickness equal to or shorter than a wavelength of electron wave and a barrier layer 114 of p-type AlGaAs having a thickness through which an electron can transmit due to the tunnel effect are alternately laminated. A protection layer 120 of As is formed on the superlattice structure 110. In this case, the degeneracy for heavy holes and light holes is removed in the superlattice structure 110 and a mini band for the heavy holes and a mini band for the light holes are formed in the valence band due to quantum effect. These mini bands occupy different energy levels because of a great difference in effective mass. As a result, similar to the case of the strained crystal, the mini band for the heavy holes takes a position higher in energy than that of the mini band for the light holes. Accordingly, if exciting light is chosen to have an energy from the mini band for the heavy holes to a conduction band and is irradiated to the semiconductor source with a circular polarization, electrons can be excited only from the mini band for the heavy holes only and can have completely aligned spins. Therefore, electrons having spin polarization of 100 % ought be obtained in theory. As a result that spin polarization of electrons extracted from the surface of the device in which a CsO multilayer is laminated on the surface was measured, a high spin polarization over 70 % can be obtained. As described above, in a case that the GaAs non-strained crystal or the superlattice structure is used as in the conventional spin polarized semiconductor electron source, although the quantum efficiency is relatively high, the spin polarization is insufficient. On the other hand, in a case that the strained crystal is used for the spin polarized electron semiconductor source, although a great polarization is obtained, the quantum efficiency is as low as 0.5 % or below because there are defects in the crystal due to the doped impurity and the strained crystal layer cannot be made thicker. In this manner, a high spin polarization and a high quantum efficiency could not be both satisfied simultaneously. Summary of the Invention An object of the present invention is to provide a spin polarized electron semiconductor source in which a high spin polarization and a high quantum efficiency can be achieved. Another object of the present invention is to provide an apparatus utilizing the above spin polarized electron semiconductor source. A semiconductor spin polarized electron source device according to the present invention is defined in claim 1. The superlattice structure is formed by alternately laminating a first layer and a second layer. The first layer the second layer are thin and the superlattice structure has a plurality of short periods of the first and second layers. The first layer is one of the strained well layer and the barrier layer and the second layer is the other. The first layer as the strained well layer has a lattice constant different from that of the substrate such that the super lattice structure has the strain of the lattice structure. At least a part of the barrier layers may be formed of a material having substantially the same lattice constant as that of a material of the substrate or may be formed of a material having a lattice constant such that an average of the lattice constant of the material of the strained well layer and that of a material of the barrier layer is about equal to the lattice constant of the material of the substrate. The strained well layer and the barrier layer may include p-type impurities of substantially the same density, or one of the strained well layer and the barrier layer may be a substantially intrinsic layer and the other may include a p-type impurity. In this case, the impurity density is desirably in a range of 5 × 10 16 cm -3 to 1 × 10 18 cm -3 . The superlattice structure may have a thickness such that the superlattice structure can utilize the input light sufficiently to excite the electrons from a valence band to a conduction band. If an average of lattice constants of the strained well and barrier is substantially equal to a lattice constance of the substrate, the superlattice structure may be formed to have a thickness enough to utilize an input light beam. The surface layer includes a p-type impurity of a density higher than those of the strained well layer and the barrier layer to provide a proper electron affinity so that the surface layer can accommodate a bent portion of the energy band on a side of the surface layer of the electron source structure when a power is supplied between the substrate and the surface layer. In the semiconductor spin polarized electron source according to the present invention, compressive stress is applied to the well layer of the superlattice structure so that an energy difference between bands for heavy holes and light holes which bands are caused due to the superlattice structure is further increased. For this reason, only electrons in the band for the heavy holes can be selectively and readily light-excited to the conduction band. As a result, electrons having a spin polarization higher than that of the conventional structure of spin polarized electron source as well as a high quantum efficiency can be taken out. Brief Description of the Drawings Figs. 1A and 1B are diagrams showing conventional devices which use a strained crystal and a non-strained superlattice structure, respectively; Fig. 2 is a diagram showing a spin polarized electron semiconductor source apparatus using a semiconductor spin polarized electron source device according to the present invention using a strained superlattice structure in a semiconductor source wherein the strained superlattice structure is employed in the first to fifth embodiments of the present invention; Fig. 3 is a diagram showing an energy band in the strained superlattice structure; Figs. 4A and 4B are diagrams for explaining bent portions of a surface layer of the semiconductor source; Fig. 5 is a diagram showing the emission of spin polarized electrons when an exciting light beam is irradiated; and Fig. 6 is a diagram showing the strained superlattice structure when each layer of the superlattice structure is formed of a plurality of sublayers. Description of the Preferred Embodiments The spin polarized electron semiconductor source device according to the present invention will be described below with reference to the accompanying drawings. Fig. 2 is a schematic diagram showing the spin polarized electron semiconductor source apparatus including a semiconductor spin polarized electron source device according to a first embodiment of the present invention. As shown in Fig. 2, the apparatus includes a spin polarized electron semiconductor source 20, a power supply 22 for supplying a DC voltage to the semiconductor source 20, and a light exciting apparatus 28 having a laser unit for supplying a light beam having a circular polarization and having a specific energy or wavelength to the semiconductor source 20. The semiconductor source 20 is accommodated in a vacuum chamber 26 and emits spin polarized electrons 42 when a bias is applied to the semiconductor source 20 by the power supply 22 and the light beam is irradiated to the semiconductor source 20 by the light source 28. The emitted electrons 42 are deflected by a deflector 24 and inputted to a measuring apparatus 30 such as a Mott polarization analyzer for measuring spin polarization and a quantum efficiency. In the semiconductor source 20, on a substrate 2 of p-type GaAs are sequentially formed a block layer 4 of p-type p-type Al 0.35 Ga 0.65 As, a superlattice structure 6, and a surface layer 8 of p + -type In 0.15 Ga 0.85 As. The block layer 4 has a thickness of 1 µm and a Be acceptor density of 5 × 10 18 cm -3 and prevents electrons generated in the substrate 2 from going into the superlattice structure 6. In the superlattice structure 6, a strained well layer 12 and a barrier layer 14 are alternately laminated. The strained well layer 12 is made of a material having a lattice constant greater than that of the substrate 2 with compressive stress applied inside a plane and has a thickness equal to or less than a wavelength of electron wave. In this embodiment, the strained well layer 12 is formed of p-type In 0.15 Ga 0.85 As and has a thickness of 2.0 nm and a Be density of 5 × 10 17 cm -3 . The barrier layer 14 is formed of the same material as that of the substrate 2 in this embodiment and has a thickness such that an electron can transmit the barrier layer 14. In this embodiment, the barrier layer 14 is formed of p-type GaAs has a thickness of 3.1 nm and a Be density of 5 × 10 17 cm -3 . The strained well layer 12 and the barrier layer 14 constitute a single short period of the superlattice structure 6. The superlattice structure includes a plurality of periods, e.g., 18 periods (corresponding to 91.8 nm) in this embodiment. The surface layer 8 accommodates a bending portion of a band structure of the semiconductor source 20 when the DC voltage is applied and has a thickness of 4.8 nm and a Be density of 4 × 10 19 cm -3 in this embodiment. A cap layer of As (not shown) is provided on the surface layer 8 for surface passivation in a manufacturing process and it is removed in the measurement. Next, the method of manufacturing the electron semiconductor source 20 according to the first embodiment of the present invention will be described below. The manufacture of the electron semiconductor source 20 of the present invention is performed at a substrate temperature of 520 °C using molecular beam epitaxy (MBE) as a crystal growth method. First, the block layer 4 of p-type Al 0.35 Ga 0.65 As is formed on the substrate 2 of p-type GaAs of a flat surface to have a thickness of 1 µm and a Be acceptor density of 5 × 10 18 cm -3 . Subsequently, the superlattice structure 6 having a plurality of short periods of the strained well layer 12 and the barrier layer 14 which are alternately laminated is formed on the block layer 4. The strained well layer 12 of a p-type In 0.15 Ga 0.85 As is formed to have a thickness of 2.0 nm and a Be density of 5 x 10 17 cm -3 and the barrier layer 14 of p-type GaAs is formed to have a thickness of 3.1 nm and a Be density of 5 × 10 17 cm -3 . An alternate layer of the strained well layer 12 and barrier layer 14 are repeated plural periods, e.g., 18 periods (corresponding to 91.8 nm) in this embodiment. Finally, the surface layer 8 of p + -type In 0.15 Ga 0.85 As is formed to have a thickness of 4.8 nm and a Be density of 4 × 10 19 cm -3 . Thereafter, the temperature of the substrate is cooled to -10 °C and an As protection film of about 1 µm is deposited to suppress oxidization of the surface in the atmosphere. Thus, the device is completed. Next, the method of measuring the spin polarization and the quantum efficiency of the electron semiconductor source 20 will be described below. The vacuum chamber 26 was evacuated to the base pressure of about 6 × 10 -10 torr. After being introduced into the ultra-high vacuum chamber 26, the semiconductor source 20 was heated up to 400 °C such that the As protection film was vaporized and removed from the surface so that a clean surface could be obtained. Then, a multilayer of Cs and O was formed on the surface from which the As layer is removed, to obtain a negative electron affinity (NEA). Thereby, the preparation of measurement was completed. The polarization measurement is performed at room temperature. A high voltage is applied to the semiconductor source 20 by the power supply 22 such that the surface layer 8 is at a ground voltage and the substrate 2 is at about -4 kV. As shown in Fig. 5, the light source 28 includes a CW titanium: sapphire laser which is excited by an argon laser and circularly polarized monochromatic light beam of 915 nm with 100 µW is irradiated from the light source 28 to the semiconductor source 20 through a quarter-wave plate. Electrons extracted from the semiconductor source 20 is accelerated up to 100 keV and deflected by a deflector 24 such that the electrons are inputted to the Mott polarization analyzer 30. As a result when the spin polarization and quantum efficiency of the semiconductor source 20 was measured, a maximum spin polarization of 87 % and a maximum quantum efficiency of 2 % could be obtained. That is, both the high spin polarization and high quantum efficiency could be satisfied simultaneously. In the first embodiment, as shown in Fig. 3, in the superlattice structure 6 composed of an alternate lamination of the strained well layer 12 and the barrier layer 14, mini bands are formed for the heavy holes and light holes due to quantum effect. As a result, the degeneracy of heavy hole band and light hole band is removed in the valence band such that these band respectively have different energy levels. In this case, the heavy hole has a large effective mass and takes an energy level slightly lower than that of the heavy hole band of crystal GaAs and, therefore, the energy level shift of the heavy hole mini band is not distinguishable. On the other hand, the light hole has a small effective mass and the energy level of the light hole mini band is moved into a low energy level direction with a large extent from the energy level of the crystal GaAs and, therefore, the energy level shift of the light hole mini band is distinguishable. In this case, since the material of the strained well layer 12 has a lattice constant greater than those of the substrate 2 and the barrier layer 14, compressive stress acts in a direction along the plane for matching between the lattice of the strained well layer 12 and that of the barrier layer 14 so that the strained well layer is strained such that a distance between lattices in a lamination direction is elongated. As a result, the energy difference between the heavy hole mini band and the light hole mini band becomes further wider compared to a case of the strained crystal in which the lattices are strained only. In this manner, in the superlattice structure having a plurality of short periods of the strained well layer 12 and barrier layer 14, it can be more completely limited to electrons in the heavy hole mini band that transit to the conduction band due to optical excitation. Therefore, electrons excited into the conduction mini band and having a spin polarization of substantially to 100 % is generated in the semiconductor source 20 and are drifted toward the surface layer 8. In this case, if the Be dose amount is less, the number of electrons excited will reduced. However, if the Be dose amount is more, any lattice defects are formed due to the acceptor impurity in the semiconductor source 20 to cause spin scattering, so that the spin polarization will be reduced. Therefore, the Be density of the strained well layer 12 or the barrier well layer 14 is desirably in a range of 1 × 10 16 to 1 × 10 18 cm -3 . Since the width of mini conduction band is sufficiently wide because the superlattice structure is composed of a plurality of short periods, the electrons have a high electron mobility as in bulk crystal. For this reason, the spin polarized electrons can move to the surface layer 8 with a short time during which they are not subjected to spin scattering. In the surface layer 8, the electrons are accelerated due to a great internal electric field to go out of the semiconductor source 20. In this case, if the acceptor density of the surface layer 8 is as much as strained well or barrier layer, a portion of the superlattice structure 6 is bent as well as the surface layer 8 such that the spin scattering is caused, as shown in Fig. 4A. Therefore, it is desirable the bent portion is accommodated only in the surface layer 8 as shown in Fig. 4B. For this purpose, it is required for the surface layer 8 to be heavily doped with Be. However, if the acceptor density of the surface layer 8 is too much, the surface layer 8 does not have good match to the Cs-O multilayer with respect to electron affinity. Hence, the surface layer 8 is desirable to have the thickness of about 4.8 nm and the Be density in a range of 1 × 10 19 to 1 × 10 20 cm -3 . Further, since there is not generated lattice relaxation from the substrate to the top layer in the superlattice structure 6, i.e., there is almost no crystal defect, the recombination of excited electrons is not generated. In addition, since the semiconductor source 20 can be designed to have the photon absorption region thicker than the strained crystal, the exciting light can be utilized effectively so that a high quantum efficiency can be achieved. As described above, electrons having a high spin polarization close to 100 % can be taken out with a high quantum efficiency in the spin polarized electron semiconductor source 20 according to the first embodiment of the present invention. (SECOND EMBODIMENT) Next, the semiconductor spin polarized electron source device according to the second embodiment of the present invention will be described below. In this embodiment, the structure diagram shown in Fig. 2 is used and the substrate 2, the block layer 4, a strained well layer 12, the barrier layer 14, and the surface layer 8 are formed of p-type GaAs, p-type Al 0.35 Ga 0.65 As, p-type In 0.15 Ga 0.85 As, p-type Al 0.35 Ga 0.65 As, and p + -type In 0.15 Ga 0.85 As, respectively. The manufacturing method of the semiconductor source 20 according to the second embodiment of the present invention was substantially the same as in the first embodiment. The structure of semiconductor source 20 was the same as in the first embodiment other than using the barrier layer 14 of p-type Al 0.35 Ga 0.65 As having a thickness of 3.1 nm and a Be density of 5 × 10 17 cm -3 . As a result when the spin polarization and quantum efficiency of the semiconductor source 20 was measured under a condition of irradiation of 100 µW in the CW mode using an exciting laser having a wavelength of 830 nm, a maximum spin polarization of 90 % and quantum efficiency of 2 % could be obtained. That is, the spin polarization higher than in the first embodiment could be obtained, resulting in achieving the high performance. This is because the AlGaAs having a forbidden band wider than that a material of the substrate 2 is used as the material of the barrier layer 14 and, therefore, an energy difference between the mini band for the heavy holes and the mini band for the light holes becomes greater than in the first embodiment so that the spin polarization is further more improved than in the first embodiment. (THIRD EMBODIMENT) The semiconductor spin polarized electron source according to the third embodiment of the present invention will be described below. In the semiconductor source 20 in this embodiment the structure shown in Fig. 2 is also used the substrate 2, the block layer 4, a strained well layer 12, the barrier layer 14, and the surface layer 8 are formed of p-type GaAs, p-type Al 0.35 Ga 0.65 As, p-type In 0.15 Ga 0.85 As, p-type GaP 0.2 As 0.8 , and p + -type In 0.15 Ga 0.85 As, respectively. The manufacturing method of the semiconductor source 20 according to the third embodiment of the present invention was substantially the same as in the first embodiment. The structure of the semiconductor source 20 was the same as in the first embodiment except that the barrier layer 14 of p-type GaP 0.2 As 0.8 having a thickness of 3.1 nm and a Be density of 5 × 10 17 cm -3 is used and the thickness of superlattice structure layer is 300 nm as a whole. As a result when the spin polarization and quantum efficiency of the semiconductor source 20 was measured under a condition of irradiation of 100 µW in the CW mode using an exciting laser having a wavelength of 880 nm, a maximum spin polarization of 88 % and quantum efficiency of 4 % could be obtained. That is, the spin polarization higher than in the first and the quantum efficiency higher than in the first and second embodiments could be obtained, resulting in achieving the high performance. Since GaP 0.2 As 0.8 having a lattice constant smaller than that of the GaAs substrate 2 is used as the barrier layer 14, if the barrier layer 14 is used in combination with the In 0.15 Ga 0.85 As strained well layer 12 having a lattice constant greater than that of the GaAs substrate 2, the average lattice constant of the strained well layer 12 and the barrier layer 14 can be set to be substantially the same as that of the GaAs substrate 2. As a result, the thickness of the superlattice structure 6 can be made thicker and thicker without the lattice relaxation. For this reason, the quantum efficiency can be improved more than in the first and second embodiments. (FOURTH EMBODIMENT) The semiconductor spin polarized electron source according to the fourth embodiment of the present invention will be described below. In the semiconductor source 20 of the fourth embodiment the structure shown in Fig. 1 is used. The substrate 2, the block layer 4, a strained well layer 12, the barrier layer 14, and the surface layer 8 are formed of p-type GaAs, p-type GaAs, intrinsic type In 0.15 Ga 0.85 As, p-type GaAs, and p + -type In 0.15 Ga 0.85 As, respectively. The manufacturing method of the semiconductor source 20 according to the fourth embodiment of the present invention was substantially the same as in the first embodiment. The structure of semiconductor source 20 was the same as in the first embodiment except that the p-type Al 0.35 Ga 0.65 As having a thickness of 3.1 nm and a Be density of 5 × 10 17 cm -3 is used as the barrier layer 14 and the undoped intrinsic type In 0.15 Ga 0.85 As of 2.0 nm is used as the strained well layer 12. As a result when the spin polarization and quantum efficiency of the semiconductor source 20 was measured under a condition of irradiation of 100 µW in the CW mode using an exciting laser having a wavelength of 915 nm, a spin polarization of 87 % and quantum efficiency of 3 % could be obtained. That is, the quantum efficiency higher than in the first embodiment could be obtained, resulting in achieving the high performance. Since the strained well layer 12 does not contain ionized impurity, there is less recombination which is generated due to any lattice defect caused by the presence of the impurity. This effect influences the quantum efficiency greatly because the probability that excited spin polarization electrons are in the strained well layer 12 is greater than the probability that they are in the barrier layer 14. Therefore, the quantum efficiency higher than in the first embodiments can be obtained. (FIFTH EMBODIMENT) The semiconductor spin polarized electron source device according to the fifth embodiment of the present invention will be described below. In the semiconductor source 20 of the fifth embodiment, the structure shown in Fig. 2 is used and the substrate 2, the block layer 4, a strained well layer 12, the barrier layer 14, and the surface layer 8 are formed of p-type GaAs, p-type Al 0.35 Ga 0.65 As, p-type In 0.15 Ga 0.85 As, undoped intrinsic-type GaAs, and p + -type In 0.15 Ga 0.85 As, respectively. The manufacturing method of the semiconductor source 20 according to the fifth embodiment of the present invention was substantially the same as in the first embodiment. The structure of semiconductor source 20 was the same as in the first except that the undoped intrinsic-type GaAs having a thickness of 3.1 nm is used as the barrier layer 14 and the p-type In 0.15 Ga 0.85 As of 2.0 nm and a BE density of 5 × 10 17 cm -3 is used as the strained well layer 12. As a result when the spin polarization and quantum efficiency of the device was measured under a condition of irradiation of 100 µW in the CW mode using an exciting laser having a wavelength of 915 nm, a spin polarization of 89 % and quantum efficiency of 2 % could be obtained. That is, the spin polarization higher than in the first embodiment could be obtained, resulting in achieving the high performance. Since the strained well layer 12 contains acceptor impurity but the barrier layer 14 does not contain, the energy band is bent at many portions in the superlattice structure 6 due to space charge. The bent portions of the energy band makes the effective barrier height against holes higher. As a result, the energy difference between the mini band for the heavy holes and the mini band for the light holes becomes greater than in the first embodiment. Therefore, the spin polarization larger than in the first embodiment can be obtained. In the above-mentioned embodiments of the present invention, only GaAs is used for the substrate. However, it is apparent that compound semiconductor such as InP, InAs, GaSb, and GaP and element semiconductor such as Si and Ge may be used as the substrate or the other single crystal semiconductor substrate and single crystal metal substrate may be used. Only GaAs, InGaAs, AlGaAs and GaPAs are shown in the above description as semiconductor material constituting the strained superlattice structure. However, it will be apparent that any combination of semiconductor materials which satisfies the condition indicated in the present invention is possible and that representative compound semiconductor such as InP, InAlAs, InAlGaAs, AlGaPAs, GaSb, AlGaSb, InAs, GaP, GaN, and AsGaN and the other semiconductor may be used. As the block layer only AlGaAs is shown. However, another semiconductor material having an electron affinity smaller than that of the substrate may be used. Further, although only InGaAs is shown as the material of surface layer which is the same as the material of strained well layer, the material of surface layer may be the same as the material of barrier layer or another semiconductor material may be used having electron affinity not so much small compared to that of the material of short period of superlattice. Furthermore, only As is shown as the protection film from oxidization in the atmosphere. However, a material such as Sb and InAs vaporizing at a temperature at which the superlattice structure is not damaged may be used for the protection film. The first to fifth embodiments are disclosed in the present invention. It will be apparent that the semiconductor spin polarized electron source according to the present invention can be realized even in combination of any of the first to fifth embodiments. For instance, in the second to fifth embodiments, two of three conditions, i.e., the composition of barrier layer, presence/absence of strain in the barrier layer, and a layer for impurity to be doped are fixed and only one condition is changed. However, it is apparent that the performance of the device higher than in the first embodiment can be obtained even in a case that two or more conditions are changed. In addition, it is apparent that the strained well layer or barrier layer may be divided into a plurality of sublayers which have different compositions as shown in Fig. 6. In Fig. 6, the strained well layer is formed of a multilayer in which a GaAs sublayer and an InAs sublayer are alternately laminated plural times and the barrier layer is formed of a multilayer in which an AlAs sublayer and a GaAs sublayer are alternately laminated plural times. The sublayer structures function as the InGaAs layer and the AlGaAs layer, respectively. According to the spin polarized electron semiconductor source of the present invention, a large amount of electrons having a great spin polarization can be taken out and the operation life can be elongated because the semiconductor spin polarized electron source operates with a weak exciting light intensity.

Claims: A semiconductor spin polarized electron source device including an electron source, comprising: a substrate (2); a block layer (4) for blocking the injection of electrons from said substrate; the p-type superlattice structure (6) formed on said block layer, having a strain of a lattice structure without lattice relaxation, and composed of a laminate layer in which a plurality of strained well layers and a plurality of barrier layers are alternately laminated, for forming a miniband for heavy holes and a miniband for light holes, wherein said strain is compressive stress, said strained well layer is composed of material having a lattice constant greater than that of said substrate and having a thickness approximately equal to or less than a wavelength of an electron wave, increasing the energy difference between the heavy and light hole minibands, electrons are excited from said heavy hole miniband to a conduction miniband in response to an input light beam, and said barrier layer has a film thickness allowing said conduction miniband to be formed; and such that an electron in the conduction miniband can transmit based on tunnel effect; and a surface layer (8) formed on said superlattice structure (6), for emitting the electrons excited in said superlattice structure; such that a bending portion of a band structure of said electron source can be accommodated when a DC voltage is applied to said electron source. The electron source device according to claim 1, wherein said surface layer (8) includes a p-type impurity of a density higher than that in said superlattice structure such that said surface layer (8) can accommodate a bent portion of the energy band on a side of said surface layer (8) of said electron source structure when a power is supplied between said substrate (2) and said surface layer (8). The electron source device according to claim 2, wherein said surface layer (8) is formed of a material having an electron affinity slightly smaller than that of a material of said superlattice structure (6). The electron source device according to claim 3, wherein said impurity density is in a range of 5 x 10 16 cm -3 to 1 x 10 18 cm -3 . The electron source device according to claim 4, wherein the layers with the p-type impurity doped have substantially the same impurity density. The electron source device according to any one of claims 1 to 5, wherein an average of the lattice constant of said strained well layer and that of said barrier layers is substantially equal to a lattice constant of said substrate (2).

Inventors: KURIHARA YOSHIMASA, MASASHI MIZUTA, NAKANISHI TSUTOMU, OMORI TSUNEHIKO, TOSHIO BABA, KURIHARA, YOSHIMASA, MASASHI, MIZUTA, NAKANISHI, TSUTOMU, OMORI, TSUNEHIKO, TOSHIO, BABA, MASASHI, MIZUTA, C/O NEC CORPORATION, TOSHIO, BABA, C/O NEC CORPORATION
Applicants: NIPPON ELECTRIC CO, NEC CORPORATION
Application year: 1995
Main classification: H01J1
IPC codes: H01J1