A method of liquid phase epitaxial growth and apparatus therefor

Abstract: An improved method and apparatus for liquid phase epitaxial growth are provided, wherein a plurality of substrates (W) are placed in a deposition chamber (22) having at least one first vent hole (22b); a solution (S) for liquid phase growth is held in a solution chamber (23) having at least one second vent hole (23b) and at least two sub-chambers (23A, 23B) separated by a partition plate (25) and communicating with each other via a communicating portion (23C); and before the substrates (W) and the solution (S) for liquid phase growth are brought into contact with each other, the deposition chamber (22) and the solution chamber (23) are revolved, causing the solution (S) for liquid phase growth to move through the communicating portion (23C) so as to increase and decrease the volume of space in the respective sub-chambers (23A, 23B), thereby causing replacement of a heat-treatment gas in the deposition chamber (22) and the solution chamber (23), while achieving heat treatment. With this heat-treatment, surface oxide films on the substrates (W) and the solution (S) are removed, thus making it possible to obtain a liquid phase epitaxial layer with excellent qualities.

Description: The present invention relates to a method of liquid phase epitaxial growth and an apparatus for carrying this out. By "a method of liquid phase epitaxial growth", we mean a method of growing an epitaxial layer (growth layer) on a single crystal substrate in which the substrate is brought into contact with a saturated solution (or supersaturated solution) of a crystalline component (solute) in a solvent, which is subsequently cooled gradually to achieve growth of the epitaxial layer by precipitating the solute in the solution onto the substrate. For instance, in a liquid phase growth method for GaP, a saturated Ga solution, wherein a GaP crystal (solute) is dissolved in molten Ga (solvent), is brought into contact with a GaP substrate and then gradually cooled down to a predetermined temperature to achieve growth of a GaP layer by precipitating the GaP in the Ga solution onto the GaP substrate. In order to deposit a liquid phase growth layer of uniform layer thickness on a number of substrates, an apparatus for liquid phase growth of the closed rotary type (hereinafter referred to as "closed rotary boat") has been used previously. FIG. 7 of the accompanying drawings shows, in cross section, one such known closed rotary boat disclosed in Japanese Patent Laid-open Publication No. 57-85222. In FIG. 7, reference numeral 11 denotes a substrate container in which a plurality of substrate holders 12 1 , 12 2 ,.... are disposed, extending perpendicular to the bottom of the container 11. The substrate holders 12 1 , 12 2 ,.... each have opposite surfaces to which a pair of substrate crystals 13 1 , 13 2 ,.... is fixed, respectively. A Ga solution container 14 holds a Ga solution 15. Between the substrate container 11 and the Ga solution container 14 there is an elongated sliding plate 16, which separates these two containers 11 and 14. The sliding plate 16 is slidable in arrowed directions b shown in FIG. 7, and has a pair of parallel spaced longitudinal grooves 17 1 and 17 2 , as shown in FIG. 8, which is a plan view of a sliding plate of the closed rotary boat shown in FIG. 7. Thus, when the sliding plate 16 is slid and a portion with the grooves 17 1 , 17 2 is disposed within both containers 11, 14, the boat is half-revolved, whereupon the Ga solution 15 is caused to move between both containers 11, 14 through the grooves 17 1 , 17 2 . Conversely, when a portion without the grooves 17 1 , 17 2 of sliding plate 16 is located within both containers 11, 14, communication between the substrate container 11 and the Ga solution container 14 is blocked by this grooveless portion of the sliding plate 16. Numeral 19 denotes an actuating rod to slide the sliding plate 16, and numeral 18 denotes an engagement hole formed in an end of the sliding plate 16 for receiving therein an end of the actuating rod 19. The following description explains how such a closed rotary boat is used to achieve liquid phase growth of a GaP layer. A plurality of substrate crystals 13 1 , 13 2 , ... are set on the substrate holders 12 1 , 12 2 , ... received in the substrate container 11. On the other hand, a predetermined quantity of GaP and Ga are received in the Ga solution container 14. After internal spaces of the respective containers 11, 14 are replaced by an inert gas (Ar, for example), the containers 11, 14 are tightly closed or sealed and then set at a predetermined position within a reacting tube of an electric furnace. In this instance, the substrate container 11 is disposed above the Ga solution container 14. This closed condition is maintained until the boat is disassembled after completion of the liquid phase growth process, so that throughout the liquid phase growth process, the gas flowing within the reacting tube is prevented from flowing into and out from the closed boat (namely, the substrate container 11 and the Ga solution container 14). Then, while the Ar gas is continuously flowing, the temperature is elevated to 1050°C and subsequently maintained for more than 60 minutes to ensure that GaP is sufficiently dissolved in Ga, thereby producing a saturated Ga solution 15 at 1050°C. In this instance, the grooves 17 1 , 17 2 in the sliding plate 16 are disposed within the containers 11, 14. Subsequently, the boat is half-revolved in the arrowed direction a , as shown in FIG. 7, so that the Ga solution 15 flows from the Ga solution container 14 through the grooves 17 1 , 17 2 into the substrate container 11 whereupon the Ga solution and the substrate crystals 13 1 , 13 2 , ... are brought into contact with each other. After they are closely contacted together, the sliding plate 16 is slid to move the portion without the grooves 17 1 , 17 2 into both containers 11, 14, thereby separating the substrate container 11 and the Ga solution container 14. Accordingly, the two containers 11 and 14 are each held in a closed or isolated condition, so that once the Ga solution 15 has flowed into the substrate container 11, it cannot flow out, even when the boat is revolved or oscillated during meltback or liquid phase growth (crystal growth) condition. Thereafter, the temperature is elevated by 5 - 10°C for meltback. In the course of the temperature rises, the boat is half-revolved to make the meltback quantity uniform. Following the foregoing temperature elevation, the boat is cooled down to 800°C to precipitate GaP in the Ga solution 15 onto the substrate crystals 13 1 , 13 2 , ..., thereby growing a GaP growth layer. During that time, in order to make the GaP growth layer uniform in thickness, the boat is half-revolved again when the temperature drops to about 975°C. When the temperature falls to 800°C, the sliding plate 16 is slid to move the grooves 17 1 , 17 2 into the containers 11, 14, and then the boat is half-revolved, causing the Ga solution 15 to move from the substrate container 14 back to the Ga solution container 14 (to separate the Ga solution 15 from the substrate crystals 13 1 , 13 2 , ...), thus completing the liquid phase growth process of the GaP layer. In the liquid phase epitaxial growth process, an oxide film, if formed on the surface of each crystalline substrate or the surface of a solution for liquid phase growth, may cause negative crystal defects in a growth layer. Accordingly, in order to obtain a growth layer with little defects, a heat-treatment in a gaseous atmosphere containing H 2 must be performed to remove the oxide film from the solution surface and the substrate surface before the solution is brought into contact with the substrate. However, the conventional closed rotary boat is constructed so as to prevent gas from flowing into and out from the deposition chamber (substrate container) and the solution chamber (solution container). With the liquid phase growth boat constructed in this way, the substrates and the solution are brought into contact with each other while oxide films are still present on the substrates and the solution surface, and after the lapse of a predetermined time, meltback and/or liquid phase growth (crystal growth) is performed, with the result that a number of surface defects are formed on and/or in a growth layer. We have now devised an improved apparatus and method for liquid phase growth by which the above-mentioned disadvantages in the prior art are reduced or overcome. In accordance with the present invention, a liquid phase growth layer can be obtained which has excellent qualities, by heat-treating the substrates and solution surfaces with a heat-treatment gas, such as H 2 or a gas containing H 2 , so as to remove surface oxide films before the substrates and the solution for the liquid phase growth are brought into contact with each other. In CH-A-505648 there is disclosed a method of liquid phase epitaxial growth having a deposition chamber and a solution chamber. In EP-A-0518332 there is disclosed another method of liquid phase epitaxial growth. In accordance with one aspect of the present invention there is provided a method of liquid phase epitaxial growth, comprising the steps of: (a) placing a plurality of substrates (W) in a deposition chamber having at least one first vent hole through which a heat treatment gas can be introduced into the deposition chamber and can be forced out of the deposition chamber; (b) placing a solution (S) for liquid phase epitaxial growth in a solution chamber, which communicates with said deposition chamber, having at least two sub-chambers separated by a partition plate and communicating with each other via a communicating portion, said solution chamber having at least one second vent hole through which the heat treatment gas can be introduced into the solution chamber and can be forced out of the solution chamber; and (c) before said substrates (W) and said solution (S) are brought into contact with each other for growing an epitaxial layer on each of said substrates (W), revolving said deposition chamber and said solution chamber for causing said solution (S) to move through said communicating portion so as to increase and decrease the volume of space in said respective sub-chambers, and thereby introducing the heat-treatment gas to one of the deposition chamber and the solution chamber, and forcing out the heat treatment gas from the other of the deposition chamber and the solution chamber, to achieve heat treatment of the surfaces of the substrates (W) and the solution (S). Preferably, the first and second vent holes provided in the deposition chamber and the solution chamber, respectively, are permeable to gas and impermeable to liquid. The vent holes preferably have an opening area not greater than 0.5mm 2 . The lower limit of the opening areas is not specifically determined, because the prescribed effect of the present invention can be attained when the vent hole is permeable to gas, even when the smallest opening area is used. However, a vent hole having an opening area exceeding 0.5mm 2 may allow the solution to flow out or leak from the vent hole, in which instance a closing plate may be provided to open and close the vent hole. The heat-treatment gas is preferably H 2 or a gas containing H 2 . Preferably, the solution for liquid phase growth passes at least twice through the communicating portion in the chamber. According to another aspect of the present invention, there is provided an apparatus for liquid phase epitaxial growth, comprising: (a) a deposition chamber for placing a plurality of substrates therein and having at least one first vent hole through which a heat treatment gas can be introduced into the deposition chamber and can be forced out of the deposition chamber; (b) a solution chamber, in communication with said deposition chamber, for holding a solution (S) for liquid phase growth therein, having at least two sub-chambers separated by a partition plate and communicating with each other via a communicating portion, and having at least one second vent hole through which the heat treatment gas can be introduced into the solution chamber and can be forced out of the solution chamber; and (c) means for revolving said deposition chamber and said solution chamber before moving them to a tilted position or an inverted position for growing an epitaxial layer on each of said substrates (W), thereby introducing the heat treatment gas to one of the deposition chamber and the solution chamber, and forcing out the heat treatment gas from the other of the deposition chamber and the solution chamber. Preferably, the apparatus further includes a sliding plate movably disposed between the deposition chamber and the solution chamber and having an opening for selectively allowing or preventing communication between the deposition chamber and the solution chamber. The deposition chamber, the solution chamber and the sliding plate are preferably made of a high-purity carbon material or like material which is heat-resistant, chemically stable and non-corrosive to the growth solution. The present invention therefore provides improvements over the conventional closed rotary type liquid phase growth technique. In accordance with the present invention, a vent hole which is permeable to gas and impermeable to liquid is provided on each of a deposition chamber and a solution chamber to achieve replacement of a heat-treatment gas, such as H 2 or a gas containing H 2 , with high efficiency for removing surface oxide films formed on the substrates and solution surfaces, thereby obtaining a liquid phase growth layer with excellent qualities. In order that the invention may be more fully understood, embodiments thereof will now be described, by way of example only, with reference to the accompanying drawings, wherein: FIG. 1 is a diagrammatical cross-sectional view of a liquid phase epitaxial growth apparatus according to one embodiment of the present invention, the view showing the apparatus in a horizontal position; FIG. 2 is a view similar to FIG. 1, but showing the apparatus revolved (or tilted) in one direction from the position of FIG. 1; FIG. 3 is a view similar to FIG. 1, but showing the apparatus revolved (or tilted) in the opposite direction from the position of FIG. 2; FIG. 4 is a view similar to FIG. 1, but showing the apparatus half-revolved from the position of FIG. 1; FIG. 5 is a cross-sectional view taken along line V-V of FIG. 1; FIG. 6 is a diagrammatical cross-sectional view of a liquid phase epitaxial growth apparatus according to another embodiment of the present invention; FIG. 7 is a diagrammatical longitudinal cross-sectional view of a conventional closed rotary boat; and FIG. 8 is a plan view of a sliding plate of the closed rotary boat shown in FIG. 7. Referring now to FIGs. 1 through 5, there is shown a rotary type liquid phase growth apparatus according to a first embodiment of the present invention. The liquid phase growth apparatus, generally designated by 21, includes a deposition chamber 22 for placing therein a number of substrates W attached to a plurality of substrate holders 24, and a solution chamber 23 for holding therein a solution S for liquid phase growth. The deposition chamber 22 has at least one first vent hole 22b with an opening area not greater than 0.5 mm 2 . The solution chamber 23 has at least one second vent hole 23b with an opening area not greater than 0.5 mm 2 , and two sub-chambers 23A and 23B separated by a partition plate 25 and communicating with each other via a communicating portion 23C. The liquid phase growth apparatus 21 is set in a quartz furnace tube 30 such that they are non-rotatable relative to one another. The furnace tube 30 is rotated by a drive means for rotating (not shown) so that the liquid phase growth apparatus 21, i.e., the deposition chamber 22 and the solution chamber 23 are rotated synchronously in the arrowed direction Y shown in FIG. 5. The deposition chamber 22 has a lower wall 22a with a lower opening 32 formed therein, while the solution chamber 23 has an upper wall 23a with an upper opening 33 formed therein in confrontation with the lower opening 32. The lower wall 22a and the upper wall 23a are disposed in vertical juxtaposition with a space 31 defined therebetween. A sliding plate 26 is slidably received in the space 31 and reciprocally movable in the arrowed direction X shown in FIG. 5. The sliding plate 26 has an elongated opening 34 formed at a position so that the opening 34 can be brought into register with the lower and upper openings 32, 33. When the opening 34 is in register with the lower and upper openings 32, 33, the deposition chamber 22 and the solution chamber 23 are held in fluid communication with each other. On the other hand, when the opening 34 is out of register with the lower and upper openings 32, 33, the deposition chamber 22 and the solution chamber 23 are held out of fluid communication with each other and each forms an isolated chamber. Designated by 27 is an actuating rod used for reciprocating the sliding plate 26. Referring now to FIGs. 1 - 4, description will be given of a method of the present invention in which surfaces of the substrates W and solution S are heat-treated under flows of a gas (H 2 gas, for example) using the rotary liquid phase growth apparatus 21 of the foregoing construction. (1) FIG. 1 illustrates the condition in which the rotary liquid phase growth apparatus 21 is disposed horizontally at a predetermined position (heated at a temperature T) in the furnace tube 30 under the flow of H 2 gas, with a plurality of substrates W and a solution S for liquid phase growth received in the deposition chamber 22 and the solution chamber 23, respectively. In this instance, the opening 34 in the sliding plate 26 is held in register with the openings 32 and 33 so that the deposition chamber 22 and the solution chamber 23 communicate with each other (open condition). (2) Then, the liquid phase growth apparatus 21 is revolved to a tilted position shown in FIG. 2 whereupon the volume of space in the sub-chamber 23A of the solution chamber 23 decreases, whereas the volume of space in the sub-chamber 23B of the solution chamber 23 (namely, the volume of space in the deposition chamber 22 plus space in the sub-chamber 23B) increases. As a consequence, the H 2 gas in the space in sub-chamber 23A is forced out or discharged via the second vent hole 23b, while the H 2 gas flowing in the furnace tube 30 is drawn or introduced via the first vent hole 22b into the space in the deposition chamber 22 (and the space in the sub-chamber 23B). (3) Thereafter, the liquid phase growth apparatus 21 is revolved to a tilted position shown in FIG. 3 whereupon the H 2 gas flowing in the furnace tube 30 is drawn or introduced via the second vent hole 23b into the space in the sub-chamber 23A and, at the same time, the H 2 gas in the space in the deposition chamber (and the space in the sub-chamber 23B) is forced out or discharged via the first vent hole 22b. The operations described in the preceding paragraphs (2) and (3) are repeated twice or more to undertake intake and discharge of the H 2 gas, so that the substrates W and the solution for liquid phase growth S are heat-treated at the temperature T under the flow of the H 2 gas, thereby removing oxide films or the like formed on the surface of the substrates W and the surface of the solution S. (4) Then, the liquid phase growth apparatus 21 is revolved to the position (the position half-revolved from the position of FIG. 1) shown in FIG. 4 whereupon the solution for liquid phase growth S in the solution chamber 23 flows into the deposition chamber 22 and is brought into contact with the substrates W. In this instance, the solution for liquid phase growth S cannot leak from the deposition chamber 22 through the first vent hole 22b so long as the opening area of the first vent hole 22b is not greater than 0.5 mm 2 . Subsequently, the sliding plate 26 is slid to move the opening 34 of the sliding plate 26 in a position out of register with the openings 32 and 33, thus isolating the deposition chamber 22. Thereafter, meltback and/or crystal growth is achieved while the liquid phase growth apparatus 21 is rotating. In the case where the solution for liquid phase growth S leaks from the first vent hole 22b due, for example, to the first vent hole 22b having an opening area exceeding 0.5 mm 2 , a closing plate (not shown) for opening and closing the first vent hole 22b may be provided. FIG. 6 shows another structural embodiment of the liquid phase growth apparatus according to the present invention. The liquid phase growth apparatus 21 of this embodiment has the same construction as the apparatus of the first embodiment shown in FIGs. 1 - 5 with the exception that there is no partition between a deposition chamber 22 and a sub-chamber 23B of a solution chamber 23. The thus constructed liquid phase growth apparatus 21 is able to carry out the method of this invention in the same operation as shown in FIGs. 1 - 4. In FIG. 6, those parts which are like or corresponding to those shown in FIGs. 1 - 5 are designated by the corresponding reference characters. The present invention will be further described below by way of the following example in which the method and apparatus of this invention are used to achieve liquid phase growth. Example 1 Using the rotary liquid phase growth apparatus 21 (made of a carbon material) of the present invention shown in FIG. 1, an n-type GaP layer was grown on each of n-type GaP substrates W by means of the liquid phase growth method. Substrate holders 24 and the n-type GaP substrates W firmly secured thereto (20 sheets per lot) were set in the deposition chamber 22, and the solution chamber 23 was supplied with predetermined quantities of Ga, GaP pollycrystal, and Te (tellurium) as an n-type dopant. The deposition chamber 22 and the solution chamber 23 were united with each other and then they were set in a predetermined position within a quartz furnace tube 30 of an electric furnace. At that time, the liquid phase growth apparatus 21 was held in the condition shown in FIG. 1 (namely, the communication between the deposition chamber 22 and the sub-chamber 23B of the solution chamber 23 were held in an open condition). Then, the liquid phase growth apparatus 21 was heated to 1,000°C while H 2 gas was continuously flowing in the furnace tube 30. Subsequently, the temperature was maintained at the same temperature for 60 minutes to prepare a saturated Ga solution of GaP (hereinafter referred to as "Ga solution") with a sufficient quantity of GaP dissolved in a molten Ga. During that time, the liquid phase growth apparatus 21 was oscillated at a frequency of 15 cycles per minute, as shown in FIGs. 1 and 3, so that the substrates W and the Ga solution S were heat-treated while the H 2 was caused to flow in the deposition chamber 22 and the solution chamber 23. Subsequently, the liquid phase growth apparatus 21 was revolved to be the position of FIG. 4, thus causing the Ga solution S to flow from the solution chamber 23 into the deposition chamber 22 where the Ga solution S and the n-type GaP substrates W were brought into contact with each other. Then, the Ga solution S and the n-type GaP substrates W were held in mutual contact with each other for 5 minutes. The sliding plate 26 was slid to place the deposition chamber 22 and the sub-chamber 23B in a closed or isolated condition, and after that heating was effected to raise the temperature to 1,010°C at the rate of 1°C per minute to achieve meltback. Subsequently, the temperature was lowered to 800°C at the rate of 1°C per minute, whereby an n-type GaP layer doped with Te at a predetermined concentration was grown on each of the n-type GaP substrates W. During the meltback and liquid phase growth processes, the liquid phase growth apparatus 21 was revolved (oscillated) at a predetermined frequency in order to obtain a uniform meltback quantity and a uniform growth thickness. When the temperature dropped to 800°C, the sliding plate 26 was slid to place the deposition chamber 22 and the sub-chamber 23B in an open or communicating condition, and then the liquid phase growth apparatus 21 was half-revolved to return the Ga solution S to the solution chamber 23, thereby separating the Ga solution S from the substrates W so as to complete the liquid phase growth process. The number of surface defects of the n-type GaP layers thus obtained were measured by an optical microscope and the results are shown in Table 1 below. Table 1 also contains the data regarding a comparative Example achieved by using the conventional closed rotary growth apparatus shown in FIG. 7 so as to obtain an n-type GaP growth layer in the same manner as the Example 1. In Table 1, the number of surface defects (pieces per sheet) is the average of 100 sheets (20 sheets/lot x 5 lots). As is apparent from Table 1, the number of surface defects is 15 pieces/sheet in the prior art and 0 (zero) in the present invention. It can therefore be understood that the present invention is particularly effective in reducing the surface defects of a liquid phase growth layer. Number of Samples (sheets) Number of Surface Defects (pieces/sheet) Example 1 (Invention) 100 0 Comparative Example (Prior Art) 100 15.2 As described above, according to the present invention, before substrates and a solution for liquid phase growth are brought into contact with each other, the substrates and the surface of the solution are heat-treated with a heat-treatment gas, such as H 2 gas or a gas containing H 2 , to remove surface oxide layers, thus making it possible to obtain a liquid phase growth layer with excellent qualities.

Claims: A method of liquid phase epitaxial growth, comprising the steps of: (a) placing a plurality of substrates (W) in a deposition chamber (22) having at least one first vent hole (22b) through which a heat treatment gas can be introduced into the deposition chamber (22) and can be forced out of the deposition chamber (22); (b) placing a solution (S) for liquid phase epitaxial growth in a solution chamber (23), which communicates with said deposition chamber (22), having at least two sub-chambers (23A, 23B) separated by a partition plate (25) and communicating with each other via a communicating portion (23C), said solution chamber (23) having at least one second vent hole (23b) through which the heat treatment gas can be introduced into the solution chamber (23) and can be forced out of the solution chamber (23); and (c) before said substrates (W) and said solution (S) are brought into contact with each other for growing an epitaxial layer on each of said substrates (W), revolving said deposition chamber (22) and said solution chamber (23) for causing said solution (S) to move through said communicating portion (23C) so as to increase and decrease the volume of space in said respective sub-chambers (23A, 23B), and thereby introducing the heat-treatment gas to one of the deposition chamber (22) and the solution chamber (23), and forcing out the heat treatment gas from the other of the deposition chamber (22) and the solution chamber (23), to achieve heat treatment of the surfaces of the substrates (W) and the solution (S). A method according to claim 1, wherein said first and second vent holes (22b, 23b) provided in said deposition chamber (22) and said solution chamber (23), respectively, are permeable to gas and impermeable to liquid. A method according to claim 1 or 2, wherein said heat-treatment gas comprises H 2 or a gas containing H 2 . A method according to any preceding claim, wherein the solution for liquid phase growth (S) passes through said communicating portion (23C) at least twice. An apparatus (21) for liquid phase epitaxial growth, comprising: (a) a deposition chamber (22) for placing a plurality of substrates therein and having at least one first vent hole (22b) through which a heat treatment gas can be introduced into the deposition chamber (22) and can be forced out of the deposition chamber (22); (b) a solution chamber (23), in communication with said deposition chamber (22), for holding a solution (S) for liquid phase growth therein, having at least two sub-chambers (23A, 23B) separated by a partition plate (25) and communicating with each other via a communicating portion (23C), and having at least one second vent hole (23b) through which the heat treatment gas can be introduced into the solution chamber (23) and can be forced out of the solution chamber (23); and (c) means for revolving said deposition chamber (22) and said solution chamber (23) before moving them to a tilted position or an inverted position for growing an epitaxial layer on each of said substrates (W), thereby introducing the heat treatment gas to one of the deposition chamber (22) and the solution chamber (23), and forcing out the heat treatment gas from the other of the deposition chamber (22) and the solution chamber (23). An apparatus according to claim 5, further including a sliding plate (26) movably disposed between said deposition chamber (22) and said solution chamber (23) and having an opening (34) for communicating between said deposition chamber (22) and said solution chamber (23). An apparatus according to claim 5 or 6, wherein said deposition chamber (22), said solution chamber (23) and said sliding plate (26) are made of a carbon material. An apparatus according to any of claims 5 to 7, wherein said deposition chamber (22), said solution chamber (23) and/or said sliding plate (26) are non-rotatably supported in a tube (30), and said deposition chamber (22), said solution chamber (23) and/or said sliding plate (26) are revolved synchronously by revolving said tube (30). An apparatus according to claim 8, wherein said tube (30) serves also as a furnace tube in a heat-treatment furnace. An apparatus according to any of claims 5 to 9, wherein said first and second vent holes (22b, 23b) provided in said deposition chamber (22) and said solution chamber (23), respectively, are permeable to gas and impermeable to liquid. An apparatus according to claim 10, wherein opening areas of said first and second vent holes (22b, 23b) are not greater than 0.5 mm 2 .

Inventors: HIGUCHI SUSUMU, SAITO MASAHIKO, YANAGISAWA MUNEHISA, YOSHIDA YUJI, HIGUCHI, SUSUMU, SAITO, MASAHIKO, YANAGISAWA, MUNEHISA, YOSHIDA, YUJI, Yoshida, Yuji, 2-Bankan 1206, Kuragano
Applicants: SHINETSU HANDOTAI KK, SHIN-ETSU HANDOTAI COMPANY LIMITED
Application year: 1995
Main classification: C30B19
IPC codes: C30B35, C30B29, H01L21, C30B19