APPARATUS FOR THERMAL TREATMENT OF THIN FILM WAFER

Abstract: An apparatus for thermal treatment of a wafer comprising a vacuum chamber (10) with a heater block (20) positioned in the vacuum chamber (10) and a clamp means (31) which presses against the wafer positioned on the heater block (20) with the weight of the clamp (31). A vacuum means (60) forms a vacuum in the chamber (10) and a gas supply means (100) supplies gas into the chamber (10) to provide a uniform temperature. A wafer supply means (50) supplies the wafer to the clamp means (31) for heat treatment.

Description: APPARATUS FOR THERMAL TREATMENT OF THIN FILM WAFER FIELD OF THE IIVVENTION: The present invention relates to an apparatus for the thermal treatment of thin film wafer and more particularly to an improved apparatus for the thermal treatment of a thin film wafer by thermally treating the wafer to be coated in a high vacuum condition. BACKGROUND OF THE INVENTION: In the days of fabricating lMDRAMs and 4MDRAMs, the process of metalization of the contact or via holes by wiring materials connecting the elements did not require a high value of the Aspect Ratio, and thus gave rise to no problems in forming a metal film by using sputter equipment to form a thin film deposit device. However, when increasing to more than 64MDRAM and 256MDRAM capacity, processing using sputter equipment failed because of the increase in the value of the Aspect Ratio. Accordingly, in order to overcome this, new equipment is being developed so that a thin film deposited by the sputter can form a metal film by self-diffusion of the atoms deposited by heating the wafer which is maintained in a continuous vacuum. Normally, an apparatus for the process of manufacturing a semiconductor requires development not only of a process to meet the highly dense integration and microization of semiconductor devices but also of a cluster system having multi vacuum chambers. The unstable transfer of a wafer in the above-described cluster system results in a low manufacturing yield of highly dense integrated memory devices due to the poor quality of the manufactured wafer because of vibration encountered during the wafer transfer and by contamination due to presence of impurity gas during the transfer. The process for forming metal film to connect the wiring of each device in the process of manufacturing a semiconductor requires a new process technique because of the highly dense integration. Currently a reflow process for the thermal treatment of the thin film wafer at a temperature below its melting point after forming a uniform thin film is being developed and applied. Therefore, since an apparatus for supporting such process requires optimum process conditions which can be obtained by adjusting process parameters such as a temperature distribution, high degree of vacuum and control of foreign particles in a vacuum container; the construction of the apparatus based on these condition is extremely important. However, in the apparatus for thermal treatment of a thin film wafer problems occur in that since it is used together with equipment for depositing aluminum, it is difficult to attain a high degree of vacuum inside the chamber and it is very difficult to uniformly heat the entire surface of the wafer to a temperature above or equal to 500° C. The clamping of the wafer to a heater block, the method for elevating the heater block fitted with the wafer and/or the method for elevating a clamp for clamping the wafer installed on top of the heater block with the heater block fixed are used. Clamping is provided on top of the heater block by elevating the heater block to the clamping means using an elevator device, such as a bellows type means, positioned below the heater block. In this case, there are problems in that the vertical movement of the heater block is not maintained during upward and downward movement of the heater block which results in the wafer being damaged during the thermal treatment process. SUMMARY OF THE INVENTION The present invention solves the above described problems, by providing an apparatus for the thermal treatment of a thin film wafer which can improve the degree of vacuum inside the chamber and prevent damage to the wafer associated with the clamping of the wafer during thermal treatment. Another purpose of the present invention is to provide an apparatus for thermal treatment of a thin film wafer which can improve the yield of usable thermally treated wafers. The purpose, objects and acting effects of the present invention are achieved by the apparatus according to the present invention for the thermal treatment of a thin film wafer having a peripheral edge. More specifically, the apparatus of the present invention comprises a vacuum chamber and a heater block positioned in the vacuum chamber. A clamp is positioned in the vacuum chamber and includes a top and an open bottom. The heater block is received thought the open bottom of the clamp during use. The clamp has a specific weight for pressing against, the wafer supported by the heater block during thermal treatment. A means for holding the wafer in the clamp prior to and subsequent to thermal treatment of the wafer, such as a plurality of fingers. An elevator means positions the clamp relative to the heater block such that in use only the weight of the clamp presses against the wafer. A vacuum means forms a vacuum in the interior of the chamber; and a gas supply means provides inert gas to the wafer during thermal treatment to maintain the wafer at a uniform temperature and to the vacuum chamber. A cooling means supplies a cooling gas to cool certain parts of the apparatus, namely, the heater block, vacuum chamber and vacuum means. A heating means supplies heat in order to heat the wafer to the proper temperature. A wafer supply means is used to supply the wafer to the clamp. The more pertinent and important features of the present invention have been outlined above in order that the detailed description of the invention which follows will be better understood and that the present contribution to the art can be fully appreciated. Additional features of the invention described hereinafter form the subject of the claims of the invention. Those skilled in the art can appreciate that the conception and the specific embodiments disclosed herein may be readily utilized as a basis for modifying or designing other structures for carrying out the same purposes of the present invention. Further, those skilled in the art can realize that such equivalent constructions do not depart from the spirit and scope of the invention as set forth in the claims. BRIEF DESCRIPTION OF THE DRAWINGS For fuller understanding of the nature and objects of the invention, reference should be made to the following detailed description taken in conjunction with the accompanying drawings in which: Fig. 1 is a partial sectional view of the apparatus for the thermal treatment of thin film according to the present invention; Fig. 2 is a perspective view of the vacuum chamber of Fig. 1; Fig. 3 is a partly broken sectional view of the heater unit; Fig. 4 is an exploded perspective view of the heater block; Fig. 5 is a sectional view of the heater block shown in Fig. 4 Fig. 6 is a side view of the heater block and the clamping means for clamping the wafer against the heater block; Fig. 7A is an exploded perspective view of the clamp; Fig. 7B illustrates finger 34; Fig. 7C illustrates dome shaped cap 37; Fig. 9 is an exploded perspective view of isolation means 70; Fig. 10 is a sectional view of the isolation means shown in Fig. 9; Fig. 11 is an enlarged sectional view of "A" of Fig 10; Fig 12 is a block diagram of gas supply means 100; Fig. 13 is an exploded perspective view of the gas supply means; Fig. 14 is a block diagram of cooling means 130; Fig. 15A is a sectional view of cooling plate member 23 and first cooling line 23a; and Fig. 15B is plan view of the cooling plate member. Similar reference characters refer to similar parts throughout the several views of the drawings. DETAILED DESCRIPTION OF THE INVENTION A detailed explanation of a preferred embodiment of the present invention with reference to the accompanying drawings is described below. The apparatus for thermal treatment of a wafer of the present invention comprises, as shown in Fig. 1 , a vacuum chamber 10; a heater means 20 such as a heater block having an upper end or top 20 A positioned in vacuum chamber 10; a clamp 31 for receiving an upper end 20A of the heater means therein and having a specific weight for, pressing against the wafer supported by the heater block when in use; an elevator means 40 for enabling the upper end 20A of heater block 20 to engage the wafer and for allowing the weight of clamp 31 to press against the wafer. The wafer supply means 50 supplies a wafer to, positions the wafer, on and removes the wafer from clamp 31. Vacuum means 60 is operatively connected to the interior of chamber 10 for forming a high degree of vacuum therein. A gas supply means 100 installed to heater block 20 to supply gas into chamber 10 is explained below. Cooling means 130 cools the surface of vacuum chamber 10, heater block 20 and a poppet plate 74 of vacuum means 60. Vacuum chamber 10 is secured to a frame 2 with heater block 10 positioned in vacuum chamber 10. In vacuum chamber 10, a vacuum is formed which is necessary during the thermal treatment of the wafer. As shown in Fig. 2, the main body of the vacuum chamber has a first through hole 12 and second through hole 13 spaced apart and formed therein with flanges 12a and 13a positioned at the respective circumferences of the first and second through holes. A heater unit is installed on the outside of the main body of the chamber 10 for facilitating the emission of gas remaining in the chamber. In heater unit 15, as shown at Figs. 2 and 3, a thin film heater 15b, such as a silicone rubber heater, is installed at heat transfer member 15 a, made of aluminum or the like, and an adiabatic material 15c, in order to prevent heat generated by thin film heater 15b from being emitted outside, is installed on the surface of heat transfer member 15a. Cover 5d is coated with a material of excellent characteristics of insulation and heat resistance such as nylon 11 and fixedly installed on adiabatic material 15c to prevent skin burns when contacted by human touch and to give a better appearance. Thin film heater 15b is preferably made to be capable of adjusting the temperature within 150 Celsius degrees at its surface. Shield 16 which separates heater block 20 from an isolation means, see Fig. 2, which will be described later, is installed in chamber 12, and a third cooling line (not shown) is installed around the first and second through holes 12, 13 formed in vacuum chamber 10 and around shield 16. Heater block 20 is positioned in cavity 11 vertically below the first through hole 12 in main body 11 of vacuum chamber 10, as shown in Fig. 2. As shown in Figs. 4 and 5, heater block 20 is supported by support 21. The upper end of heater block 20 includes cooling plate member 23 (of cooling means 130) which includes first cooling line 23a, as described below. Below cooling plate member 23 is heater 24. At the lower center of heater block 20, conduit 25 is in gaseous communication with a plurality of gas supply holes 25a formed with predetermined spacing along the upper circumferential edge of heater block 20. Preferable, the upper surface 20A of heater block 20 is inclined 20c, so as to form a cone, toward the center of heater block 20 so that gas supplied from the plurality of gas supply holes 25a can flow between the wafer and the upper surface of heater block 20. Another reason why the upper surface of the heater block is inclined is to uniformly maintain the spacing between the heater block and wafer at the time of wafer clamping. Guide recesses 20aa are vertically formed at the peripheral surface of heater block 20 so that fingers of the clamp, described below, can pass. Stopper 26, Fig. 5, is positioned on the surface of support 21 to support clamp 31, which is described below, in the event a wafer has not been positioned on the heater block, in order to prevent the flange of the clamp from engaging the top of the heater block. Elevator means 40 enables the movement of the wafer so as to be clamped against the upper surface of heater block 20 in use. As shown in Figs 6 and 7, apertures 33, 33' are formed in the peripheral wall of the main body 33a of clamp 31 through which the arm of the wafer supply means can be inserted and removed to position a wafer. Each aperture 33, 33' is composed of a first hole 33 e which is formed having a certain width, and a second hole(s) 33d being a lengthwise extension from first hole 33e having a smaller width than the width of first hole 33e in order to accommodate the size of the wafer, as illustrated at Fig. 7. At least two apertures 33 are symmetrically formed in clamp 31 according to the present invention to permit access of the wafer supply means therethrough. The upper edge of main body 33a includes a circumferential flange 33 c extending toward the center of the main body 33 a. There are at least three support members 32 radially positioned about main body 33a with each member 32 having a predetermined angular interval as seen in Fig. 7. At the bottom surface of each support 32, a support opening 32a is formed therein for receiving an end of rod 42d of elevator means 40. A plurality of fingers 34 support wafer 200 supplied by arm 53 and are positioned on the interior circumferential surface of clamp 31, as illustrated in Fig 7A. Each finger 34, see Fig 7B, is preferably equally positioned between first hole 33e of aperture 33 and first hole 33e' of aperture 33' on the inner circumferential surface of clamp 31 and preferably includes a set screw in order to permit the working position to be changed, if desired. The upper surface of the finger is preferably formed with an inclined step having a predetermined angle (about 45 degrees) as shown in Fig. 7B. Cap 35 is positioned on top clamp 31 to cover the clamp. The configuration of the cap 35 may include an opening(s) formed therein to permit access to aperture 33, 33'. Here, cap 35 is preferably made of a material having excellent reflective index, such as stainless steel or nickel, being preferably of a dome shape. Wafer supply means 50 is operatively positioned in front of aperture 33 formed in clamp 31, as shown in Fig 6 and comprises an actuator 51 having rod 51a to which is secured arm 53 which is provided with wafer support 53a. Elevator means 40 selectively moves clamp 31 relative to heater block 20, as shown in Fig.6. Elevator means 40 comprises base plate 41 secured to the lower surface of bottom surface of vacuum chamber 10 (in which support 21 of heater block 20 is installed), with at least three rods 42 vertically and slideably positioned at base plate 41. Support plate 43 connects the ends of each rod 42 exposed below the bottom surface of chamber 10. A transfer member 44 is secured to the center of support plate 43. A ball screw 46 with transfer member 44 are supported by a bracket 45 secured to the lower surface of the base plate 41. An actuator 48 is secured to the lower surface of bracket 45 to rotate or counter-rotate ball screw 46. Brake means 90 is positioned at the lower end of ball screw 46 in order to prevent ball screw 46 from rotating by inertial force. The end of each rod 42 is tapered to form an angle of about 90 degrees and is positioned vertically below each support hole 32a and engages each support hole 32a provided at the end of each support member 32 of clamp 31, respectively. Support plate 43 which connects the end of the rod is preferably of a triangle or a disk shape. Bellows 42a are installed at the sliding portion between the base plate 41 fixed to the chamber and rod 42d. Shield 42b is fixed to the bottom surface of chamber 10 and encloses bellows 42a. This shield protects the bellows from the emitted heat from the heater and prevents damage to the bellows due to foreign particles. The actuator preferably utilizes a servo motor or hydraulic motor. Vacuum means 60 is installed vertically below vacuum chamber 10 to maintain the interior of the vacuum chamber 10 at a high degree of vacuum, see Fig.l. As shown in Fig. 8, a first and second vacuum pump 62, 63 are connected in serial to a first connecting pipe 61 operatively connected through the bottom surface of vacuum chamber 10 vertically below second through hole 13, and first and second valve 64, 65 are installed between vacuum chamber 10 and first vacuum pump 62 and at the first connection pipe 61 between first and second vacuum pump 62, 63, respectively. A first bypass pipe 66 in communication with first connection pipe 61 above and below the first valve 64 is installed at the first connection pipe 61, and a third valve 67 is installed on first bypass pipe 66. This prevents the generation of foreign particle laden flow since fluid flow in the vacuum chamber 10 generates a viscous flow at the time of initial vacuum in vacuum chamber 10. The first and second vacuum pump 62, 63 are preferably a drag pump and a dry pump. First, second and third valves 64, 65,67 are preferably solenoid valves. A second connection pipe 68 of the vacuum means is installed vertically below second through hole 13, and is connected to first connection pipe 61 between first valve 64 of the first connection pipe and first vacuum pump 62. Second connection pipe 68 is installed to communicate with or be isolated from the inside of vacuum chamber 10 by an isolation means 70 (see Figs. 8-11), and a fourth valve 69a is installed on second connection pipe 68 between third vacuum pump 69 and first connection pipe 61. A vacuum release gas supply pipe 69b for releasing the vacuum in vacuum chamber 10 is installed at the upper end of first connection pipe 61. A fifth valve 69c is installed on gas pipe 69d, and a bypass pipe 69b is installed which connects gas pipe 69b on both sides of fifth valve 69c. Isolation means 70 isolates the inlet of second connection line 68a during the operation of first and second pumps 62, 63 and is positioned at flange 13a of the second through hole 13 formed in the top of vacuum chamber 10 being connected to second connection pipe 68. Isolation means 70 comprises, see Figs. 9-11 housing 71, flange 71a, being connected to the edge of second through hole 13 of vacuum chamber 10. At the bottom center of the isolation means is provided a through hole 71b. A support member 76 is connected to flange 71a of housing 71. A cylinder 72 is positioned into housing 71, and a rod 72a, with a bore 72b, protrudes out of support member 76 and the bottom of housing 71, see Fig. 11. A poppet plate 74 is fixed to the bottom of rod 72a, and bore 72b of rod 72a is in communication with the outlet of second cooling line 74a formed inside poppet plate 74. Poppet plate 74 is in close contact with the bottom of vacuum chamber 10 in order to isolate the inlet of second connection pipe 68 thereby isolating the vacuum chamber from the vacuum pumps. An O-ring 74b is installed below poppet plate 74, as seen in Fig. 9. A supply pipe 75 is inserted into bore 72b of rod 72a and operatively connected to the outlet of second cooling line 74a, and supported by support member 76 so that stopping part 79 limits the lowering position of poppet plate 74. The stopping part 79 restricts the opening of the poppet plate and is composed of a plurality of disk springs 79a. A bellows 81 is installed outside rod 72a between the bottom of housing 71 and the top the poppet plate 74. The isolating means serves to isolate the interior of the vacuum chamber from the vacuum pumps. In the installation of the supply and discharge port of heat exchange medium for rod 72a and supply pipe 75, as shown in Fig. 11, a packing member 82 is installed between the outer circumferential end surface bore 72b of rod 72a and the inner cicumferential end surface of supply pipe 75 to separate the inside of bore 72b. A supply port 83 for supplying a heat exchange medium to supply pipe 75 and a discharge port 84 for discharging the heat exchange medium from bore 72b are installed on the outer circumferential surface of rod 72a having packing member 82 as a boundary. This provides cooling for O-ring 74b. Gas supply means 100 supplies a heat exchange medium gas such as an inert gas, e.g. argon, during heat treatment of the wafer to the chamber 10 via pipe 103 and to heater block 20 via pipe 25. As shown in Figs. 12 and 13, a fourth connection pipe 102 is connected to connection pipe 25 (see Fig. 5) being installed below heater block 20 with a filter 101 operatively installed on the fourth connection pipe 102. A fifth connection pipe 103 is installed to communicate with vacuum chamber 10 near the connection part of the first connection pipe 61 at vacuum chamber 10 and is connected to fourth connection pipe 102. A second bypass pipe 104 connects the fourth and fifth connection pipes 102 and 103. A seventh, eighth and ninth valves 106, 107 and 108 are operatively installed as shown at Fig 12. Gas supply controllers 121 and 122 are installed at the fourth and fifth connection pipe 102 and 103 to control the gas supply. Cooling means 130 cools first, second and third cooling lines of the vacuum chamber 10, heater block 20 and isolation means 70 by supplying them with a heat exchanging medium such as gas air or cooling fluid. As shown in Fig. 14, a first branch pipe 132 connects a third cooling line formed on the peripheral surface of vacuum chamber 10 and first cooling line 23 a of the heater block to a heat exchanging medium supply pipe 131 being connected to a heat exchanging supply means (not shown) such as a pump. A second branch pipe 133 is connected to the heat exchanging medium supply pipe 131 and to supply port 83 of second cooling line 74a of isolation means 70. A third branch pipe 134 is connected to the heat exchanging medium supply pipe 131 and to first vacuum pump 62. A plurality of drain pipes 135 are connected to outlets of the first, second and third cooling lines. At least two relief valves 136, 137 operating at different pressures are installed at the outlet of first branch pipe 132. This is to prevent the rise of steam pressure in the cooling line due to the rise of steam pressure due to water when utilized as the cooling medium. The temperature of water rises due to the operation of the heater installed at the side of the vacuum chamber and this valve releases the pressure automatically when the pressure rises above a predetermined level. First, second and third safety devices are provided by further installing a pressure switch 140 to the first branch pipe. As shown in Fig. 15, a tube is installed to cooling plate member 23 of first cooling line 23 a of the heater block. The space between the tube and cooling plate member is silver brazed to improve the heat exchanging efficiency between the tube and cooling plate member. Between a valve 138, Fig. 14, installed at first branch pipe 132 and vacuum chamber 10, is connected an air supply pipe 150 to which a valve 151 and a check valve 52 are installed. Reference number 139 represents an orifice and reference number 200 the wafer for manufacturing a semiconductor. A detailed explanation of the operation of the apparatus for the thermal treatment of thin film according to the present invention constructed, as described above, follows. To form a metal wiring layer by heating a wafer, on which an aluminum alloy is deposited by utilizing a low temperature vacuum sputtering method with the apparatus for the thermal treatment of thin film as described according to the present invention includes the following steps: First, the inside of the vacuum chamber must be maintained at a high degree of vacuum (below about 5x10 E-9) utilizing vacuum means 60. That is, to maintain the interior of vacuum chamber 10 to a high degree of vacuum, as shown in Figs. 1, 8 and 10, O-ring 74b installed below poppet plate 74 is pushed against the bottom of vacuum chamber 10 by lowering rod 72a through operation of cylinder 72 of isolation means 70, so that the inlet of the second connection pipe 67 installed with the third vacuum pump 69 which is a low temperature pump, is isolated. In this condition, a vacuum is formed inside vacuum chamber 10 and inside third vacuum pump 69 by low speed operation of second pump 63, which is a dry pump, after locking first valve 64 and opening third valve 67 as installed on the first bypass pipe 66 and fourth valve 69a as installed on the second connection pipe 68. When the inside of vacuum chamber 10 reaches a predetermined vacuum pressure, the first bypass pipe 66 is isolated by closing the third valve 67 and the first valve 64 installed on the first connection pipe 61 is opened, and whereupon the inside the vacuum chamber 10 reaches a predetermined vacuum pressure, the second vacuum pump 62 is operated to form a vacuum inside vacuum chamber 10 at high speed. While the vacuum is achieved by operating as described above third vacuum pump 69, which is a low temperature pump, reaches a predetermined vacuum pressure. When the temperature of the third vacuum pump 69, which is a low temperature pump, falls down to a low temperature (absolute temperature 10 to 60 degrees) and the inside of the vacuum chamber 10 reaches a predetermined vacuum pressure, the first valve 64 and the fourth valve 69a are closed, and the third vacuum pump 69 is operated with the cylinder 72 of the isolation means 70 so that poppet plate 74 is raised. If force acting on the cylinder 72 is released, the space between the bottom surface of vacuum chamber 10 and poppet plate 74 is maintained to a predetermined spacing (about 1/2 inch) by a stopping part 79 composed of a disk spring supported by a support member 76 combined with the housing. In this condition, heater unit 15 installed on the outer surface of vacuum chamber 10 is operated to heat vacuum chamber 10. Therefore, even the gas absorbed to the inside of vacuum chamber 10 and the inner walls of the chamber are discharged so that the inside of the vacuum chamber is maintained to a high degree of vacuum and super cleanness. While the inside of the vacuum chamber is maintained at a high degree of vacuum, the cooling water, which is the heat exchange medium supplied by heat exchange medium supply pipe 131 of cooling means 130 is supplied to the water jacket of the second cooling line 74a of poppet plate 74 through heat exchange medium supply pipe 75 and the supply port of isolation means 70 in order to cool poppet plate 74. Therefore, heat damage to O-ring 74b installed below poppet plate 74 can be prevented, and the gas flowing into the third vacuum pump 68, which is a low temperature pump, can be cooled. When the inside of vacuum chamber 10 reaches a high degree of vacuum, as described above, the wafer for manufacturing the semiconductor is supplied to the heater block 20 which is installed inside the vacuum chamber 10 is heated. To do this, first actuator 88 of first elevator means 40 is operated to rotate ball screw 46, thereby rotating transfer member 44 threadably connected to ball screw 46 in order to raise support plate 43. As support plate 43 is raised, rods 42 travel toward the supports whereupon the end of rod is inserted into support hole 32a provided at each support of clamp 31. Support plate 43 is raised further, clamp 31 is raised above heater block 52. So that actuator 51 of wafer supply means 50 is operated and wafer 200 mounted on support 53a of arm 53 connected to rod 51 a of the actuator 51 is inserted into the aperture of the clamp. At this time, wafer 200 supported by support 53a is positioned on top of fingers 34. When the insertion of the wafer 200 by the support is completed, actuator 51a of wafer supply means 50 is lowered to lower arm 53 or clamp 31 by elevator means 40 is raised, to a predetermined height in order to lower arms 53 to the second hole 3 le so that wafer 200 supported by support 32a is now supported by fingers 34 fixed to the inner surface of the clamp 31. When wafer 200 is supported by fingers 34, the actuator is operated to withdraw arm 53 out of the aperture. When the wafer 200 is supported by fingers 34 of clamp 31, the actuator 48 of elevator means 40, supported by bracket 45, is operated to rotate ball screw 46. As ball screw 46 is rotated, transfer member 44 is lowered so that rods 42 are lowered. As rods 42 are lowered, clamp 31 is lowered to be placed on heater block 20 and fingers 34 of clamp 31 pass along the guide grooves 20a formed on the outer circumferential surface of heater block 20 so that wafer 200 supported by fingers 34 is placed on top of heater block 20. With wafer 200 placed on top of the heater block 20, if rod 42 is further lowered, the circumferential flange 33c formed at the upper edge of clamp 31 pushes against the edge of wafer 200 seated on the heater block. In this condition, actuator 48 is operated so that the end of rod 42 is separated from support hole 32a provided on support 32 of clamp 31. In this way, the circumferential flange 33c of clamp 31 pushes against the edge of the wafer 200 by weight of the clamp 31. Therefore, deformation or breakage of the wafer due to excessive clamping force on wafer 200 against the heater block 20 is eliminated. The wafer 200 is thermally treated by heater block 20 heated by heater 24 installed below heater block 20 with the wafer 200 positioned thereon as described above. The entire surface of the wafer can be heated with uniform speed by the top and bottom surface of the heater since cap 35 is placed on the top of clamp 31 to seal the opening of the clamp and a separate heat source, such as a lamp heater 36 is provided inside cap 35. As described above, during the process of heating the wafer with heater block 20, gas is supplied from the fourth connection pipe 102 of the gas supply means through connection pipe 25 and through gas penetration holes 25a which are uniformly spaced along the top circumferential edge of the heater block 20, as seen in Fig. 2. Heater block 20 is provided with an inclination which rises from the edge of heater block 20 to the center thereof. Therefore, gas flows from the edge to the center between heater block 20 and wafer 200 so as to heat the wafer to a uniform temperature. At this time, vacuum chamber 10 must be maintained at a predetermined pressure, and the pressure is adjusted by the gas supplied to the heater block and by gas supplied through the fifth connection pipe or the second bypass pipe 104. Upon completion of the thermal treatment of wafer 200 as described above, wafer 200, seated on the heater block 20, is removed. A detailed explanation of the removal process follows: To remove wafer 200, the inflow of gas supplied from the above described two places is stopped by opening valve 108 installed on the second bypass pipe 104. Then actuator 48 of elevator means 40 is operated to raise ball screw 46 and support plate 43 (supported on transfer member 44 combined with ball screw 46) so that the end of rod 42 (supported by support plate 43) is inserted into support hole 32a of the support 32 of clamp 31. In this condition, rods 42 are further raised, raising clamp 31. When clamp 31 is raised, the clamping of the wafer by the circumferential flange 31c is released. Fingers 34 formed on the inner circumferential surface of clamp 31 now move along guide grooves 20aa formed on the circumferential surface of heater block 20 so that fingers 34 touch the edge of the wafer and support the wafer. In the condition described above, if second hole 33d of aperture 33, 33' formed at the peripheral surface of the clamp 31 is positioned in front of arm 53 of wafer supply means 50 and as clamp 31 is further raised by rod 42, actuator 48 of the elevator means 40 is stopped, thereby stopping the movement of rods 42. Then actuator 51a of wafer supply means 50 is operated to insert arm 53 into the aperture so that wafer support 53a provided at the end of arm 53 is place below wafer 200 supported by fingers 34. In this condition, clamp 31 is lowered by lowering 42 through operation of actuator 48 and elevator means 40 on the wafer supply means altering by a certain distance, wafer support 53a of the arm 53. Then actuator 51a is again operated to remove arm 53 out of the aperture 33 in order to pull out the wafer. Wafer 200 is repeatedly thermally treated by the operation as described above. When the thermal treatment of the wafer is completed, the apparatus for thermal treatment of thin film wafer is cooled, and the cooling takes many hours since the inside of the vacuum chamber is in a condition of a high degree of vacuum. Therefore, cooling means 130 must be used to cool heater block 20. That is, to cool heater block 20, a heat exchange medium must be supplied to the first cooling line 23 a installed at cooling plate member 23 via the heat exchanging medium supply pipe 131 and the first branch pipe of the cooling means. Heat exchange mediums include gas, e.g. air and fluid, e.g. cooling water. Where the heater block has been heated to high temperature, the heater block is firstly primarily cooled by supplying air to the first cooling line 23a by closing valve 138 installed on first branch pipe 132 and opening valve 151 of air supply pipe 150 connected to first branch pipe 132, and then, once the temperature of heater block 20 falls down to a predetermined temperature (about 200 C), the heater block 20 is cooled by supplying cooling water to the first cooling line 23a by isolating valve 151 installed on air supply pipe 150 and opening valve 138 installed on first branch pipe 132. As described above, the apparatus for thermal treatment of a thin film wafer of the present invention can maintain the inside of the vacuum chamber to high degree of vacuum, heat the entire surface of the wafer to a uniform temperature, prevent the diffusion of foreign particles due to the movement/swirling of gas in the vacuum chamber, and cool the heater block within a short time so as to prevent the erosion of the heater and protect the heater power source. In addition, the present invention can significantly improve the yield of thermally treated wafers. Although this invention has been described in its preferred form with a certain degree of particulasrity, it is appreciated by those skilled in the art that the present disclosure of the preferred form has been made only by way of example and that numerous changes in the details of the construction, combination and arrangement of parts may be resorted to without departing from the spirit and scope of the invention.

Claims: WHAT IS CLAIMED IS: 1. Apparatus for thermal treatment of a thin plate wafer having a peripheral edge, comprising: a vacuum chamber; a heater means for heating said operatively positioned inside the vacuum chamber; a clamp means positioned in said vacuum chamber and having a top and an open bottom for receiving said heater block through said bottom and having a specific weight for pressing against, in use, said wafer supported by a heater block; and an elevator means for positioning said clamp relative to said heater block such that in use only said weight of said clamp presses against said wafer; a vacuum means for forming a vacuum inside said chamber; and a gas supply means for providing gas to at least one surface of said wafer during thermal treatment to assist in maintaining said wafer at a uniform temperature during thermal treatment. 2. Apparatus for the thermal treatment of said wafer according to claim 1 , wherein said vacuum chamber includes an exterior surface; and a heating means for heating said vacuum chamber secured to said external surface of said vacuum chamber. 3. Apparatus for thermal treatment of saidafer according to claim 1, wherein said heater block further includes a top and said gas supply means includes a plurality of gas penetration holes uniformly spaced along the circumference of said top of said heater block with each said plurality of gas penetration holes being operatively connected to a supply of gas. 4. Apparatus for the thermal treatment of said wafer according to claim 3 wherein said top of said heater block defines a cone shape which rises from the circumferential edge of said heater block to the center thereof to enhance flow of said gas between said top of said heater block and said wafer. 5. Apparatus for thermal treatment of said wafer according to claim 1 wherein said heating means is a heater block which further includes a cooling plate member for cooling said heater block. 6. The apparatus for the thermal treatment of a wafer according to claim 1 further including a means for holding said wafer in said open-ended cylinder to enable, in use, said clamp to hold said wafer prior to and subsequent to thermal treatment of said wafer. 7. Apparatus for thermal treatment of said wafer according to claim 1, wherein said clamp comprises: a cylindrical main body circumferentially formed with at least one aperture formed in the peripheral surface of said main body through which aperture an arm of said wafer supply means may be inserted; a circumferential flange extending a certain length toward the center of said main body and formed at an upper edge of said main body; supports radially extending a certain length from the peripheral surface of said main body and having support holes formed therein; and a plurality of fingers positioned on the inner circumferential of said main body for engaging the edge of said wafer and supporting said wafer supplied by said arm. 8. Apparatus according to claim 7, wherein a cap is installed on top of said clamp to reflect heat emitted. 9. Apparatus according to claim 8, wherein said cap has a dome shape. 10. Apparatus according to claim 8 or 9, wherein heaters are installed inside and outside said cap. 11. Apparatus according to claim 10, wherein said heater is a lamp heater. 12. Apparatus according to claim 8 or 9, wherein said cap is made of stainless steel or nickel. 13. Apparatus according to claim 1, wherein said vacuum means comprises: a first connection pipe in communication with the interior of said vacuum chamber and operatively connected in series to a first valve, a first vacuum pump and a second vacuum pump from said vacuum chamber side; a second connection pipe having an inlet and in communication with the interior of said vacuum chamber and operatively connected to said first connection pipe; a third pump operatively connected to said second connection pipe; and an isolation means for selectively opening and closing said inlet of said second connection pipe. 14. Apparatus according to claim 13, wherein at said first connection pipe is installed a first bypass pipe which connects the upper and lower part of said first valve and which is installed with a second valve. 15. Apparatus according to claim 13, wherein said third vacuum pump is a low temperature pump. 16. Apparatus according to claim 13, wherein said isolation means comprises: a housing having a cavity formed therein; a cylinder positioned in said cavity and a rod of which protrudes from the bottom of said housing and the top of said support plate, a poppet late which is installed at the end of said rod protruding from the bottom of said housing and is in close contact with the bottom of said vacuum chamber, and close and open the inlet of said connection pipe, and a sealing member installed at the bottom of said poppet plate. 17. Apparatus according to claim 13, wherein said sealing member is an O-ring. 18. Apparatus according to claim 16, further comprising a stopping part which is supported by a support member to set the position of said poppet plate so that said poppet plate is spaced a predetermined distance from the bottom of said chamber at the time when said cylinder is not operate. 19. Apparatus according to claim 18, wherein said topping part is composed by a stack of a plurality of disk spring, the edge of which is supported by said support member and the center of which is supported by the peripheral surface of said rod. 20. Apparatus according to claim 1, wherein said gas supply means comprises a connection pipe which is formed at the bottom of said heater block and communicates with a plurality of through holes formed at the top of said heater block a fourth connection pipe connected to said connection pipe and fitted with valves and filters, a fifth connection pipe one end of which is connected to said fourth connection pipe and other end of which communicates with said vacuum chamber, a gas pressure controller installed at said fourth and fifth connection pipes, and second bypass pipe which connects said fourth and fifth connection pipes and to which a valve is installed. 21. Apparatus according to claim 1, wherein said connection part of said fifth connection pipe connected to said vacuum chamber is placed at the side of said second connection pipe of said vacuum means. 22. Apparatus according to claim 1, further comprising a cooling means for cooling said heater block, vacuum chamber and poppet plate. 23. Apparatus according to claim 22, wherein said cooling means comprises a plurality of branch pipes which are connected to a first cooling line installed to a cooling plate member of said heater block, a second cooling line installed at a poppet plate of said isolation means and a third cooling line installed at the peripheral surface of said vacuum chamber, respectively, a heat exchanging medium supply pipe connected to each said branch pipe to supply a heat exchanging medium and at least one drain pipe connected to the outlets of said first, second and third cooling lines. 24. Apparatus according to claim 23, wherein a plurality of relief valve operating at different pressures are installed at a drain pipe connected to an outlet of said first cooling line of said vacuum chamber. 25. Apparatus according to claim 23 or 24, wherein said first cooling line installed at said vacuum chamber is composed of a tube installed at said coding plate member. 26. Apparatus according to claim 25, wherein the space between said tube and cooling plate member is silver brazed. 27. Apparatus according to claim 23, wherein said second cooling line installed at said isolation means is connected to the outlet of a water jacket formed at said poppet plate since said rod of said cylinder is formed of a hollow pipe, and an outlet pipe is inserted to said hollow part of said rod to be connected to the inlet of said water jacket. 28. Apparatus according to claim 24, wherein a pressure switch is installed on said drain pipe. 29. Apparatus according to claim 23, wherein an air supply pipe installed with a valve is installed at said branch pipe connected to said first cooling line. 30. Apparatus according to claim 1, wherein a stopper for limiting the lowering position of said clamp is installed on the peripheral surface of said heater block.

Inventors: CHOI CHANG-HWAN, CHOI WON-SONG, KIM SEK-YOUNG, KYUNG HYUN-SU, LEE HUENG-JIK, SHIN JUNG-HO, CHOI, CHANG-HWAN, CHOI, WON-SONG, KIM, SEK-YOUNG, KYUNG, HYUN-SU, LEE, HUENG-JIK, SHIN, JUNG-HO
Applicants: CHOI CHANG HWAN, CHOI WON SONG, KIM SEK YOUNG, KYUNG HYUN SU, LEE HUENG JIK, SHIN JUNG HO, VARIAN ASSOCIATES, CHOI, CHANG-HWAN, CHOI, WON-SONG, KIM, SEK-YOUNG, KYUNG, HYUN-SU, LEE, HUENG-JIK, SHIN, JUNG-HO, VARIAN ASSOCIATES, INC.
Application year: 1995
Main classification: F28F7
IPC codes: C23C14, H01L21