Power element driving circuit

Abstract: A power element driving circuit is provided with an abnormality detecting circuit which detects an occurrence of abnormality in an IGBT (power element) or a short-circuit load based on a collector voltage of the IGBT, and controls a gate voltage control circuit so as to gradually reduce a gate voltage of the IGBT. According to the described arrangement, the IGBT can be protected from breakdown caused by short-circuit current increased by itself due to an inverse current from the load. Moreover, since an occurrence of abnormality in the IGBT is detected after starting up the IGBT, the rise time for the IGBT can be reduced, thereby preventing the thermal breakdown or power loss which may occur when a long rise time is required.

Description: FIELD OF THE INVENTION The present invention relates to a power element driving circuit in accordance with the precharacterizing part of claim 1. A power element driving circuit of that kind is disclosed in EP 0 467 682 A. BACKGROUND OF THE INVENTION An inverter is applied to a variety of fields for controlling variable speed of an AC motor, mainly for voltage controlled V/F (Variable/Frequency) control. The variable speed control of this type is performed by regularly switching a load of the AC motor, etc., by the inverter. As a power element for the inverter, IGBT (Insulated Gate Bipolar Transistor), MOSFET, a power transistor, etc., have been used. Among the above-listed power elements, the IGBT and the MOSFET are the power elements of voltage driving type, and have extremely high input impedances of the gate. For example, when the IGBT is adopted as the power element, when a short-circuit load occurs, a large current flows according to its current-voltage characteristic. Additionally, the IGBT has a smaller chip area compared with the power transistor and the MOSFET, which results in a smaller thermal capacity, thereby presenting the problem that the IGBT may breakdown. Therefore, in order to protect the IGBT from breakdown, it is required to detect an occurrence of abnormality at an earliest possible stage when the short-circuit load occurs and lower the gate voltage. As a conventional IGBT protection method, a method for activating the IGBT at two stages is known. In this method, as shown in Fig. 8, when activating (switching on) the IGBT, first, the IGBT starts up at low gate voltage V G to limit the short-circuit current. At this stage, if it is confirmed that abnormality has not occurred, the gate voltage V G is raised to a normal level as shown by the solid line. On the other hand, if it is determined that abnormality has occurred, the gate voltage V G is lowered to turn off the IGBT as shown by the short dashed line without raising the gate voltage V G to the normal level. Normally, the time required for switching the gate voltage of the IGBT is not more than 0.1 µs. However, when adopting the described IGBT protection method, considering the time required for detecting an occurrence of abnormality, at least around 5 - 10 µs is required for switching the gate voltage of the IGBT. Additionally, the mentioned time period is always required irrespectively of whether or not abnormality has occurred in the IGBT. When a long switching time is required as in the described case, the problem of breakdown of the IGBT due to a small thermal capacity or larger power loss may occur. In the drive circuit for a voltage driven type semiconductor device disclosed in EP 0 467 682 A, a serial circuit of a resistor and a Zener diode is connected to an output terminal, namely a collector of the voltage driven type semiconductor device (IGBT = Insulated Gate Bipolar Transistor). An overcurrent flowing in said IGBT is detected based on a current flowing through the serial circuit and the presence or absence of a drive signal set to the driving means from an external control circuit. The detection level of the overcurrent can be adjusted by the voltage of the Zener diode, thereby realizing a quick detection of an overcurrent condition. In one embodiment depicted in Fig. 9 of that document, said power element driving circuit comprises additional means (resistor R7 and transistor T7) which are activated during the overcurrent protection operation and are short-circuiting an output of a photocoupler acting as input element to the driving means so that the protection operation is maintained even when the input to the photocoupler is eliminated (shut off). In a further known drive circuit for a current sense IGBT disclosed in EP 0 467 681 A in addition to a fault discrimination operational circuit for detecting an overcurrent of the current sense IGBT, a capacitor is operatively connected in parallel to the gate-emitter of the current sense IGBT and a transistor for discharging the capacitor via a resistor. In case of short-circuit fault, an overcurrent is detected by the fault discrimination operational circuit which turns on the transistor so that the gate voltage of the IGBT is gradually declined to turn off the IGBT. This enables the IGBT to be protected from a transitional overvoltage across the collector and emitter of the IGBT. EP-A-0 599 455 being an intermediate document in accordance with Art. 54(3) EPC discloses a power transistor overcurrent protection circuit which includes a timer circuit, the time counting thereof being started upon the detection of an overcurrent condition by means of an abnormality signal. If the current control action based on the detected overcurrent condition continues for a prescribed time, the timer reaches "count-up" as a result of which its output signal closes a gate of an AND circuit provided in an input circuit of a driving means so that, even when drive instruction is remaining in its logic "1" condition, the gate voltages of IGBTs acting as power elements are negatively biased and the overcurrent flowing therethrough is cut off. SUMMARY OF THE INVENTION An object of the present invention is to provide a power element driving circuit which permits a shorter rise time of a voltage to be applied to a control electrode (gate) of the power element without damaging a protection function. In order to achieve the above object, the present invention provides a power element driving circuit comprising driving means for driving a power element including a control electrode driven only by a voltage applied to the control electrode, said driving means including a circuit having an n-p-n transistor and a p-n-p transistor which are complementary connected in series, and the control electrode of said power element being connected to an emitter of said n-p-n transistor and to an emitter of said p-n-p transistor, the emitter of said n-p-n transistor and the emitter of said p-n-p transistor being connected; control means for controlling said driving means; abnormality detecting means for detecting an occurrence of abnormality in said power element or in a load connected to said power element; and voltage drop control means for controlling said control means so as to gradually lower a driving voltage of said power element when the occurrence of abnormality in said power element or the load connected to said power element is detected by said abnormality detection means; wherein said control means sends a control signal to a base of said n-p-n transistor and to a base of said p-n-p transistor the base of said n-p-n transistor and the base of said p-n-p-transistor being connected so as to control a voltage applied to the control electrode of said power element, characterized in that a single source power supply voltage is applied across a collector of said n-p-n transistor and and a collector of said p-n-p transistor, and said abnormality detecting means includes a comparator circuit comprising a reference voltage with a voltage of an electrode, the being one of the load current electrodes of said power element, whereby said comparator circuit has a hysteresis characteristic. In the power element driving circuit having the described arrangement, an occurrence of a short-circuit load or abnormality in the power element is detected by the abnormality detection means. Upon detecting the occurrence of the described abnormality, the control means controls the driving means for reducing a driving voltage of the power element under the control of the voltage drop control means, thereby gradually reducing the driving voltage. In the case where the IGBT is adopted as the power element, as the IGBT increases the short-circuit current by an inverse current from the load when the gate voltage suddenly drops, the IGBT may break down. Therefore, according to the arrangement of the present invention, as the driving voltage is gradually lowered, the power element can be protected from breakdown. It is preferable that the power element driving circuit of the present invention further includes holding means for holding the driving voltage reducing operation even when an external signal for switching the power element OFF is inputted in a process of lowering the driving voltage by the voltage drop control means. According to the above-mentioned arrangement, even when a signal for switching the power element OFF is inputted (including the case where the signal for switching the power element on is shut out), the driving voltage reducing operation is continued by the holding means, thereby preventing a sudden drop in driving voltage of the power element. As a result, the power element can be protected from breakdown due to a sudden drop in driving voltage. For a fuller understanding of the nature and advantages of the invention, reference should be made to the ensuing detailed description taken in conjunction with the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a circuit diagram showing a structure of an essential part of a power element driving circuit in accordance with one embodiment of the present invention. Fig. 2 is a circuit diagram showing a structure of a gate voltage control circuit in connection with a voltage drop control circuit upon detecting an occurrence of abnormality in the power element driving circuit of Fig. 1. Fig. 3 is a wave form chart showing a wave form of a single in each section of the power element driving circuit of Fig. 1. Fig. 4 is a circuit diagram showing a structure of a protecting operation holding circuit for holding a protecting operation in the power element driving circuit of Fig. 1. Fig. 5 is a circuit diagram showing a structure of an abnormality detecting circuit in the power element driving circuit of Fig. 1. Fig. 6 is a circuit diagram of an explanatory example showing a structure of an optically coupled element wherein a power element driving circuit is integrated. Fig. 7 is a wave form chart showing respective wave forms of a gate voltage in a normal condition and in an abnormal condition, which is be applied to an IGBT by the power element driving circuit of Fig. 1. Fig. 8 is a wave form chart showing respective wave forms of a gate voltage under a normal condition and an abnormal condition, which is to be applied to an IGBT by a conventional power element driving circuit. DESCRIPTION OF THE EMBODIMENTS The following descriptions will discuss one embodiment of the present invention in reference to Fig. 1 through Fig. 7. As illustrated in Fig. 1, in a power element driving circuit in accordance with the present embodiment, a signal input section 1 is connected to a gate voltage control circuit 2. The gate voltage control circuit 2 is connected to a common base connection of a driving circuit wherein an n-p-n transistor 3 and a p-n-p transistor 4 are complementary connected in series. A common emitter connection between the n-p-n transistor 3 and the p-n-p transistor 4 is connected to a gate of an IGBT 6 as a power element through a resistor 5. A withstand high voltage diode 7 is connected across a collector and an emitter of the IGBT 6. The collector of the IGBT 6 is connected to an abnormality detecting circuit 9 through a withstand high voltage diode 8. A resistor 10 is provided between an anode of the withstand high voltage diode 8 and a power supply (voltage Vcc), and a condenser 11 is provided between the anode and ground. A Zener diode 12 and a constant current circuit 13 are connected in series across the power supply and ground, and an input terminal of the abnormality detecting circuit 9 is connected to the connection between the Zener diode 12 and the constant current circuit 13. Output terminals of the abnormality detecting circuit 9 are connected to the following three elements: the gate voltage control circuit 2 through a holding circuit 14; the signal input section 1 through an abnormal signal output circuit 15; and the gate voltage control circuit 2 through a voltage drop control circuit 16 upon detecting an occurrence of abnormality (hereinafter simply referred to as a gate voltage control circuit). The holding circuit 14 is provided for preventing a protecting operation initiated upon detecting the occurrence of abnormality from suddenly stopping by cancelling the abnormality immediately after the protecting operation is started. Namely, once the protecting operation is started, the holding circuit 14 holds the protecting operation until it is completed. The abnormal signal output circuit 15 feeds back the detection of abnormality by the abnormality detecting circuit 9 to an external section through the signal input section 1. A detecting section 17 is composed of the withstand high voltage diode 8, the abnormality detecting circuit 9, the resistor 10, the condenser 11, the Zener diode 12 and the constant current circuit 13 which are in the square marked by the short-dashed line in Fig. 1. The detecting section 17 is provided with a function for detecting a collector voltage and a function for setting a detection level. The operation of the power element driving circuit having the described arrangement will be described below. First, abnormality detecting operations based on a collector voltage of the IGBT 6 will be explained below. As described, the collector of the IGBT 6 is connected to the abnormality detecting circuit 9 through the withstand high voltage diode 8. The abnormality detecting circuit 9 is a comparator circuit, and an output from the abnormality detecting circuit 9 varies depending on a condition of a collector voltage of the IGBT 6 and a detection level (V CC - V ZD : V ZD indicates a Zenner voltage of the Zenner diode 12). The abnormality detection level is set based on an emitter potential of the IGBT 6. In other words, the abnormality detection level is set based on V CC value irrespectively of a level of an inverse bias voltage of the IGBT 6. Alternatively the abnormal detection level may be set using ground or an externally generated potential independently of the internal potential as a reference. The respective operations of the case where abnormality has occurred in the IGBT 6 and the case where the abnormality has not occurred in the IGBT 6 will be explained. In order to activate the IGBT 6, an ON control signal is inputted to the signal input section 1. As a result, as shown in Fig. 7, the gate voltage V G is instantaneously switched to the HIGH level shown by the solid line indicating a rise. In this state, if abnormality has not occurred neither in the load (the load of the IGBT 6) not shown, nor the IGBT 6, the collector voltage of the IGBT 6 is lowered to around 2-5 volts, thereby inputting a signal of a LOW level to the abnormality detecting circuit 9 through the withstand high voltage diode 8 which detects a collector voltage. By the signal of the LOW level inputted to the abnormality detecting circuit 9, the holding circuit 14, the abnormal signal output circuit 15 and the gate voltage control circuit 16 will not be activated. In the state where abnormality has not occurred neither in the load nor the IGBT 6, and an input signal is not inputted, since it is not needed to protect the IGBT 6, the holding circuit 14, the abnormality signal output circuit 15 and the voltage drop control circuit 16 will not be activated by the input signal from the signal input section 1. On the other hand, in the state where abnormality has occurred in the load or the IGBT 6, and an ON control signal is inputted, when the collector voltage of the IGBT 6 is switched to the HIGH level, a signal of a HIGH level is inputted to the abnormality detecting circuit 9. By the input signal, the holding circuit 14, the abnormal signal output circuit 15 and the voltage drop control circuit 16 are activated, and the gate voltage of the IGBT 6 is gradually lowered as shown by the short dashed line in Fig. 7, thereby protecting the IGBT 6 from breakdown due to short-circuit current increased by itself by an inverse current from the load. The described gate voltage reducing operation will be explained in more detail in reference to Fig. 2. For convenience in the explanations, only the components of the gate voltage control circuit 21 related to the voltage drop control circuit 16 are shown in the figure. As illustrated in Fig. 2, the voltage drop control circuit 16 is composed of constant current circuits 160·161, a constant current switching circuit 162 and a NOT circuit 163 which are in the square marked by the short-dashed line. The constant current switching circuit 162 for controlling ON/OFF of the constant current circuits 160·161 includes the aforementioned abnormality detecting circuit 9. To the constant current switching circuit 162, a collector voltage is inputted from the point D shown in Fig. 1. In Fig. 2, an interface 18 corresponding to the signal input section 1 (see Fig. 1) is connected to a base of an n-p-n transistor 20. A resistor 23 is connected to a collector of an n-p-n transistor 21, and a resistor 24 is connected across a base and an emitter of a n-p-n transistor 22. Further, a diode 25 is connected across an emitter of the p-n-p transistor 21 and a collector of the p-n-p transistor 22. The aforementioned components of the gate voltage control circuit 2 are composed of the n-p-n transistors 20 through 22, the resistors 23 and 24 and the diode 25. Whether or not abnormality has occurred in the IGBT 6 or in the load is detected by the abnormality detecting circuit 9 based on the collector voltage of the IGBT 6 detected through the withstand high voltage diode 8. Upon detecting an occurrence of abnormality, the following operations will be executed by a constant current switching circuit 162. In the state where the n-p-n transistors 20 and 21 are respectively switched ON and switched OFF and the n-p-n transistor 22 is switched ON, the p-n-p transistor 4 is switched ON which causes a sudden drop in gate voltage. According to the arrangement of the present embodiment, the constant current circuit 160 is switched OFF and the constant current circuit 161 is switched ON in the state where the n-p-n transistor 20 is switched OFF. Then, the base current of the p-n-p transistor 4 is pulled in the constant current circuit 161, and the gate voltage is gradually lowered. The reducing speed of the gate voltage can be altered as desired by setting the current value of the constant current circuit 161. Alternatively, a resistor may be used in replace of the constant current circuit 161. In the case of adopting the resistor, the reducing speed of the gate voltage can be altered by changing the resistance. In Fig. 2, a resistor 19 is provided between a connection (the point B) between the emitters of the n-p-n transistor 3 and the p-n-p transistor 4 and a connection between the bases of the transistors 3 and 4. The resistor 19 is provided for preventing the switching of the p-n-p transistor 4. Fig. 3 shows a wave form of a signal in each section of the power element driving circuit of Fig. 1. In the normal state, as shown by the solid line in Fig. 3, when a signal is inputted from the signal input section 1, the input signal is switched from the LOW level to the HIGH level at the point A. Then, the gate voltage control circuit 2 switches the n-p-n transistor 3 ON, and a voltage at the point B is switched to the HIGH level. As a result, the IGBT 6 is switched ON, and the collector current I C flows thereto, thereby switching the voltage to the HIGH level at the point C. In this state, as the abnormality is not detected by the abnormality detecting circuit 9, the voltage at point D remains in the LOW level, and the voltage at the point E (output from the abnormal signal output circuit 15) remains in the HIGH level. When a short-circuit load or an abnormal condition of IGBT 6 has occurred, as shown by the short dashed line in Fig. 3, the collector current I C of the IGBT 6 increases, and the collector voltage at the point C is increased. As a result, the voltage at the point D is switched to the HIGH level, and the protection function for the IGBT 6 is operated by the abnormality detecting circuit 9, thereby switching the voltage at the point B and the voltage at the point E to the LOW level. In the circuits shown in Figs. 1 and 2, while the gate voltage is being lowered due to abnormality occurred in the IGBT 6, for example, as an input light is cut-off, when a signal for switching OFF the gate voltage is inputted from the external section, the gate voltage may be suddenly switched OFF. In this case, as described earlier, breakdown of the IGBT 6 may occur due to an increased short-circuit by an inverse current from the load. The described problem can be solved by adopting the circuit having the arrangement illustrated in Fig. 4. The circuit is a protecting operation holding circuit 30 composed of an OR circuit 31, a delay circuit 32, a NOT circuit 33 and an AND circuit 34 which are shown in the square marked by the short dashed line in the Fig. 4. In the figure, only the components related to the protecting operation holding circuit 30 are shown as in the previous case. In the protecting operation holding circuit 30 which serves as the holding means, a signal from the abnormality detecting circuit 9 is inputted to the OR circuit 31 directly and through the delay circuit 32. An output from the OR circuit 31 is inputted to one of the input terminals of the AND circuit 34 through the NOT circuit 33. Additionally, an input signal is inputted to the other input terminal of the AND circuit 34. In the protecting operation holding circuit 30 having the described arrangement, when a signal is outputted from the abnormality detecting circuit 9 of Fig. 1, during the time period in the delay circuit 32, as a signal is not inputted to the AND circuit 34 from the NOT circuit 33, an input signal is not outputted to the interface 18, thereby holding an output irrespectively of whether or not a signal is inputted. As illustrated in Fig. 5, the abnormality detecting circuit 9 includes p-n-p transistors 40 and 41 whose emitters are connected and a constant current circuit 42 connected across the emitter and the power supply. The collectors of the p-n-p transistors 40 and 41 are respectively connected to the collectors of n-p-n transistors 43 and 44. The base of the n-p-n transistor 43 and the base of the n-p-n transistor 44 are connected. Furthermore, the base and the emitter of the n-p-n transistor 43 are short-circuited. The base of the p-n-p transistor 40 is connected to the emitter of a p-n-p transistor 45. The Zener diode 12 (Fig. 1) is connected across the base of the p-n-p transistor 45 and the power supply, and the constant current circuit 13 (Fig. 1) is provided so as to be branched from the base. On the other hand, the base of the p-n-p transistor 41 is connected to an emitter of a p-n-p transistor 48, and a diode 49 is connected across the base and the emitter of the p-n-p transistor 48. The base of the p-n-p transistor 48 serves as an input terminal for inputting thereto an abnormality detecting voltage. In the circuit having the described arrangement, the reference voltage to be applied to the comparator is set by the Zener diode 12 and the constant current circuit 13. The reference voltage is set to a voltage obtained by extracting the Zener voltage of the Zener diode 12 from the voltage of the power supply. When the input terminal is switched from the LOW level to the HIGH level, a voltage at the point Q will be: V in - V F (V in is an input voltage to be applied to the input terminal, and V F is a forward voltage of the diode 49). On the contrary, when the input terminal is switched from the HIGH level to the LOW level, a voltage at the point Q will be: V in + V BE (V BE is a base-emitter voltage of the p-n-p transistor 48). Therefore, from the side of the input terminal, the voltage at the point Q is: V in + V BE = 0.7 (V) + 0.7 (V) = 1.4 (V) , and the hysteresis of 1.4 (V) is obtained. Namely, only by connecting the diode 49 across the emitter and the base of the p-n-p transistor 48 in the generally used comparator, the hysteresis can be easily provided in response to a signal inputted to the comparator. Next, an exemple of an arrangement where a power element driving circuit not claimed in claim 1 is incorporated into an optically coupled element will be explained. As illustrated in Fig. 6, the optically coupled element includes an anode terminal and a cathode terminal of a light emitting diode 100 on the primary side, and includes a power supply terminal V CC , a ground terminal GND, an input terminal O 1 connected to the collector of the n-p-n transistor 3, and an output terminal O 2 connected to the base of the IGBT 6 on the secondary side and an abnormality detecting input terminal O E . The optically coupled element includes a photo diode 101 for receiving light from the light emitting diode 100 in a vicinity of the light emitting diode 100, and an amplifier 102 for amplifying an output from the photo diode 101. A constant voltage generated in the constant voltage circuit 103 is applied to the amplifier 102 and to the input circuit 111 which is a part of the signal input section 1 (see Fig. 1). Then, the output from the input circuit 111 is applied to the n-p-n transistor 3 and the n-p-n transistor 4 respectively through the logic elements 104 and 105. To the connection between the output terminal of the logic element 104 and the base of the n-p-n transistor 3, a protection circuit 106 is connected. The protection circuit 106 includes the gate voltage control circuit 2, the detecting section 17 (excluding the withstand high voltage diode 8 and the condenser 11), the holding circuit 14, the errors detecting circuit 15 and the gate voltage control circuit 16 (see Fig. 1), etc. The protection circuit 106 is provided for protecting the IGBT 6. A light emitting diode 107 is connected across the output terminal of the protection circuit 106 and a ground terminal GND. Further, a photo transistor 108 is provided for receiving light from the light emitting diode 107. In the optically coupled element having the described arrangement, an abnormality detecting signal outputted on the secondary side, i.e., the side of the driving section for the IGBT 6 is fed back to the primary side by the light emitting diode 107 and the photo transistor 108. As described, by forming the optically coupled element provided with the function for protecting the IGBT 6 on a single chip, a significant reduction in the size of the circuit can be achieved compared with the conventional IPM (Intelligent Power Module), etc., wherein such circuit is composed of discrete elements. As a note, the IPM is an IC composed of a switching power element, a driving circuit for driving the switching power element, a protection circuit for protecting the switching power element, etc., which are integrated to form a module. The IPM is also referred to as a "power IC". According to the described arrangement, since each component is formed on a single chip, variations in the properties among the components can be suppressed, and an improved noise resistance can be achieved, compared with the IPM composed of discrete elements. Furthermore, when the optically coupled element is applied to a generally used inverter, the number of components can be significantly reduced. Additionally, a significant cost reduction can be achieved, from several thousands yen/each to several tens yen/each compared with the conventional IPM. In the optically coupled element, the output from the protection circuit 106 is fed back to the primary side inside the element. However, it may be arranged so as to be outputted as an abnormality detecting signal to the secondary side. In order to prevent the problem of higher threshold level of the optically coupled element which may occur in the state where a light amount is reduced due to the deterioration of the light emitting diode 100 on the primary side, a warning function may be provided, for informing that the light emitting diode 100 cannot maintain the normal level by monitoring the light amount of the light emitting diode 100. Alternatively, when the light emitting diode 100 deteriorates, a function for increasing a forward current of the light emitting diode 100 may be provided for preventing a higher threshold level of the optically coupled element.

Claims: A power element driving circuit comprising: driving means (3, 4) for driving a power element (6) including a control electrode driven only by a voltage applied to the control electrode, said driving means (3, 4) including a circuit having an n-p-n transistors (3) and a p-n-p transistor (4) which are complementary connected in series, and the control electrode of said power element being connected to an emitter of said n-p-n transistor (3) and to an emitter of said p-n-p transistor (4), the emitter of said n-p-n transistor (3) and the emitter o f said p-n-p transistor (4) being connected (B): control means (1, 2) for controlling said driving means (3. 4): abnormality detection means (9) for detecting an occurrence of abnormality in said power element (6) or in a load connected to said power element (6); and voltage drop control means (16) for controlling said control means (1, 2) so as to gradually lower a driving voltage of said power element (6) when the occurrence of abnormality in said power element (6) or the load connected to said power element is detected by said abnormality detection means (9): wherein said control means (1, 2) sends a control signal to a base of said n-p-n transistor (3) and to a base of said p-n-p transistor (4), the base of said n-p-n transistor (3) and the base of said p-n-p transistor (4) being connected, so as to control a voltage applied to the control-electrode of said power element (6), characterized in that a single source power supply voltage (V cc ) is applied across a collector of said n-p-n transistor (3) and a collector of said p-n-p transistor (4), and said abnormality detection means (9) includes a comparator circuit (40 - 45, 48, 49) comparing a reference voltage with a voltage of an electrode (C), the electrode (C) being one of the load-current electrodes of said power element (6), wherein said comparator circuit (40 - 45, 48. 49) has a hysteresis characteristic. The power element driving circuit as set forth in claim 1, wherein said voltage drop control means (16) includes: a constant current circuit (161) provided between base and collector terminal of said p-n-p transistor (4) for pulling in a base current from said p-n-p transistor (4) when said abnormality detection means (16) detects an abnormality, and a switching circuit (162) being arranged for stopping an operation by said control means (1, 2) and activating said constant current circuit (161) upon receipt of said abnormality detection signal from said abnormality detection means (9). The power element driving circuit as set forth in claim 1, further comprising: holding means (14; 30) connected to said control means (1. 2) and to an output of said abnormality detecting means (9) for holding the driving voltage reducing operation even when said control means (1, 2) inputs to said driving means a signal for switching said power element (6) OFF during a process of lowering the driving voltage by said voltage drop control means (16). The power element driving circuit as set forth in claim 3, wherein said holding means (14; 30) includes: a delay circuit (32) for delaying an abnormality detecting signal inputted from said abnormality detecting signal inputted from said abnormality detection means (9) for a predetermined time; an OR circuit (31) for outputting a logical sum of the abnormality detecting signal inputted from said abnormality detection means (9) and an abnormality detecting signal passed through said delay circuit (32); a NOT circuit (33) for inverting an output from said OR circuit (31); and an AND circuit (34) for outputting a logical product of an output from said NOT circuit (33) and an external signal for switching said power element (6) ON/OFF. The power element driving circuit as set forth in claim 1 wherein: said comparator circuit (40 - 45, 48, 49) includes a transistor (48) for inputting thereto the voltage (V in ) to be compared with the reference voltage. wherein a diode (49) is connected across an emitter and a base of said transistor (48). The power element driving circuit in accordance with one of the preceding claims, wherein said power element (6) includes an insulated gate bipolar transistor. An optically coupled element being an integrated circuit and comprising: a light emitting element (100): a light receiving element (101) for receiving light emitted from said light emitting element; and a power element driving circuit in accordance with one of the claims 1 to 6. wherein said light emitting element (100), said light receiving element (101). said driving means (3, 4), said control means (1, 2), said abnormality detection means (9), and said voltage drop control means (16) are formed on a single chip.

Inventors: MASUI YOSHITUGU, MASUI, YOSHITUGU
Applicants: SHARP KK, SHARP KABUSHIKI KAISHA
Application year: 1995
Main classification: H03K17
IPC codes: H03K17, H02M3, H02M7, H02H3, H02M1