Thin film piezoelectric device and ink jet recording head comprising the same

Abstract: The thin film piezoelectric device which has excellent properties is disclosed. A thin film piezoelectric device according to the present invention comprises a piezoelectric film which is polycrystalline, and two electrodes by which the piezoelectric film is sandwiched, wherein the size of crystal grains of the piezoelectric film substance is 0.4 µm or more and equal to or less than the thickness of the piezoelectric film. A process for producing the thin film piezoelectric device are also disclosed. The process comprising the steps of: forming the precursor film of a piezoelectric film on an electrode, first heating the electrode at a temperature of 500 to 700 °C to crystallize the precursor film, thereby obtaining a piezoelectric film which is polycrystalline, and secondly heating the electrode at a temperature of 750 to 1200 °C in an oxygen-containing atmosphere, thereby controlling the size of crystal grains of the piezoelectric film, observable from the surface of the piezoelectric film to 0.4 µm or more.

Description: The present invention relates to a piezoelectric device of thin film type which can convert electric energy to mechanical energy, and vice versa. More specifically, the present invention relates to a piezoelectric device of thin film type which can be used for an actuator, a pressure sensor, a temperature sensor, an ink jet recording head, and the like. In general, the composition of a piezoelectric thin film is of a two-component system in which lead zirconate titanate (PZT) is a main component, or of a three-component system in which a third component is added to PZT. However, we have never known such a precedent that attention was paid on the size of crystal grains contained in a thin film piezoelectric device and that the size of the crystal grains was controlled to the range as defined in the present invention. For example, ferroelectrics in which PZT of a two-component system is used are disclosed in Applied Physics Letters, 1991, Vol. 58, No. 11, 1161-1163. Although this report discloses the properties of the ferroelectrics in detail, the evaluation of the properties of the ferroelectrics as piezoelectric devices are not conducted. Further, Japanese Laid-Open Patent Publication No. 40035/1994 discloses a piezoelectric substance. However, it fails to describe the size of crystal grains contained in a film of the piezoelectric substance. Furthermore, Journal of The American Ceramic Society, 1973, Vol. 56, No. 2, 91-96 also discloses a film of a piezoelectric substance. It is described that the size of crystal grains contained in this film, observable by a scanning electron microscope is approximately 1.7 to 7 micrometers. A thin film piezoelectric device comprising the features of the preamble of claim 1 is known from WO-A9216975. This document discloses a thin film having a thickness of the order of 10 micrometer in which the grain size may equal the thickness of the thin film. Further, EP-A-0 455 342 discloses piezoelectric powder having an average particle size of 0.1-5 µm. The article "Fabrication of Transparent Electrooptic PLZT Ceramics by Atmosphere Sintering", Gary S. Snow, Journal of the American Ceramics Society, volume 56, no. 2, 1973, pages 91 to 96 discloses a piezoelectric film having a crystal grain size in the range of 0.4 µm to 3 µm. However, the thickness of the piezoelectric film disclosed in this prior art document is between 0.5 mm to 4.0 mm. Accordingly, this thin film piezoelectric device is not suitable for being incorporated into very small devices, e.g. an ink jet recording head of small dimensions. We have now found that the properties of a thin film piezoelectric device are closely related to the size of crystal grains of a piezoelectric film, and established a process suitable for producing a thin film piezoelectric device in which crystal grains have a size in a specific range. Accordingly, an object of the present invention is to provide a thin film piezoelectric device having excellent properties. This object is achieved by the thin film piezoelectric device as defined in claim 1. In the drawings, Fig. 1 is a perspective view showing the structure of a thin film piezoelectric device according to the present invention; Figs. 2(a) and 2(b) are illustrations showing the preferred structure of an ink jet recording head comprising the thin film piezoelectric device according to the present invention; and Fig. 3 is an illustration showing another preferred structure of an ink jet recording head comprising the thin film piezoelectric device according to the present invention. The thin film piezoelectric device of the present invention basically composed of a piezoelectric film which is polycrystalline, and two electrodes by which the piezoelectric film is sandwiched. The size of crystal grains contained of the piezoelectric film is in the range of 0.4 µm to 3 µm and the thickness of the piezoelectric film is between 1 µm and 5 µm. The size of crystal grains contained in the piezoelectric film can be that of crystal grains which are observed at the inside of the piezoelectric film. However, it is more convenient to observe the surface of the piezoelectric film to determine the size of crystal grains. This is because of crystal grains of the piezoelectric film are preferrably combined with each other tightly, so that there may be a case where the contour of the crystal grains is not clearly shown on the section of the piezoelectric film. A piezoelectric device having excellent properties can be obtained when the size of crystal grains of the a piezoelectric film is controlled in a range of between 0.4 µm to 3 µm and the piezoelectric film has a thickness of 1 µm to 5 µm. It is known that the displacement amount of a piezoelectric device can be expressed by the following equation: Displacement Amount = a x d31 x V = a x E33 x g31 x V wherein a represents a proportionality factor, d31 represents a piezoelectric constant. E33 represents a relative dielectric constant, g31 represents a voltage output factor, and V represents a voltage applied. It has now confirmed that the piezoelectric constant d31 in this equation becomes high when the size of the crystal grains is controlled an accordance with the present invention. Without intending to be bound by theory, it is believed that when the size of the crystal grains is controlled to the above value or more, the relative dielectric constant E33 is considered to become high. Accordingly the thin film piezoelectric device of the invention has a piezoelectric constant d31 of 80 pC/N or more, preferably 150 pC/N or more. It is preferable that the thin film piezoelectric device according to the present invention comprises a so-called two-component system in which lead zirconate titanate (PZT) is the main component. Specific examples of the composition of a two-component system include those represented by the following formula: Pb(Zr X Ti 1-X )O 3 + YPbO wherein X and Y are 0.40 ≦ X ≦ 0.6 and 0 ≦ Y ≦ 0.3, respectively. Further, the composition of the thin film piezoelectric device according to the present invention comprises a three-component system in which a third component, for example, lead niobate magnesium, is added to the PZT. Specific examples of the composition of a three-component system include those represented by the following formula: PbTi a Zr b (A g B h ) c O 3 + ePbO + (fMgO) n wherein A represents a divalent metal selected from the group consisting of Mg, Co, Zn, Cd, Mn and Ni, or a trivalent metal selected from the group consisting of Sb, Y, Fe, Sc, Yb, Lu, In and Cr; B represents a quinquevalent metal selected from the group consisting of Nb, Ta and Sb, or a sexivalent metal selected from the group consisting of W and Te; and a to h fulfill the following conditions: a + b + C = 1 , 0.35 ≦ a ≦ 0.55, 0.25 ≦ b ≦ 0.55, 0.1 ≦ c ≦ 0.4, 0 ≦ e ≦ 0.3, 0 ≦ f ≦ 0.15c, g = h = 1/2 , and n=o , provided that when A represents the trivalent metal, B does not represent sexivalent metal, and when A represents the divalent metal and B represents the quinquevalent metal, g is 1/3 and h is 2/3, and only when A is Mg and B is Nb, n is 1. A more preferable specific example of the composition of a three-component system is one in which A represents Mg, B represents Nb, g is 1/3 and h is 2/3. In the compositions, it is preferable that PbO be in the above ranges in order to make the crystal grains of the piezoelectric film large and dense. Further, when A is Mg and B is Nb, the presence of MgO prevents PbO from evaporating in the course of thermal treatment, and the reaction between PbO and a silicon substrate is also prevented. Furthermore, MgO stabilizes the perovskite structure which improves the piezoelectric properties. In order to improve the piezoelectric properties, an extremely small amount of Ba, Sr, La, Nd, Nb, Ta, Sb, Bi, W, Mo, or Ca may also be incorporated into the piezoelectric film of either a two-component system or a three-component system. In particular, in the case of the three-component system, it is preferable to incorporate 0.10 mol% or less of Sr or Ba in order to improve the piezoelectric properties. Further, in the case of the three-component system, it is also preferable to incorporate 0.10 mol% or less of Mn or Ni in order to enhance the degree of sintering of the piezoelectric film. The structure of the thin film piezoelectric device of the invention will now be specifically explained by referring to the accompanying drawings. The thin film piezoelectric device shown in Fig. 1 is composed of a silicon (Si) substrate 101, a thermally-oxidized Si film 102, a lower electrode 103 (made of, for example, Pt), a piezoelectric film 104, and an upper electrode 105 (made of, for example, Au). Further, according to the preferred embodiment of the present invention, an adhesive layer 106 made of, for example, Ti may be provided between the lower electrode 103 and the piezoelectric film 104, and between the upper electrode 105 and the piezoelectric film 104. The thickness of the piezoelectric film 104 is 1 to 5 µm. The thickness of the other films and layers can be properly selected. However, for instance, the thickness of the Si substrate is preferably in the range of approximately 10 to 1,000 µm, that of the thermally-oxidized Si film is preferably in the range of approximately 0.05 to 3 µm, and those of the upper electrode and of the lower electrode are preferably in the range of approximately 0.05 to 2 µm. The thin film piezoelectric device of the present invention can be produced by utilizing various conventional techniques for forming a thin film, although it is necessary to control the size of crystal grains of the piezoelectric film to between 0.4 µm and 3 µm. Sputtering may be preferably used for forming a thin film. Specifically, by using as a target a sintered PZT which is an essential component, the precursor film, which is amorphous, of a piezoelectric film is formed on an electrode film by means of sputtering. Thereafter, the amorphous precursor film is crystallized and sintered by heating. It is preferable to conduct this heating treatment by two steps in an oxygen-containing atmosphere (for example, in oxygen, or in a mixed gas of oxygen and an inert gas such as argon). Specifically, in the first heating step, the amorphous precursor film is crystallized. In the second heating step, crystal grains produced are allowed to grow, and sintering between the crystal grains is promoted. Specifically, in the first heating step, the precursor film is heated at a temperature of preferably from 500 to 700 °C in an oxygen atmosphere. The precursor film is thus crystallized. This first heating step can be terminated when the precursor film is uniformly crystallized. Subsequently, in the second heating step, the crystallized film is heated at a temperature of 750 to 1200 °C. This heating is continued until the size of the crystal grains becomes at least 0.4 µm. More preferably, the heating is continued until the crystal grains are tightly combined with each other. The first and second heating steps can be conducted continuously. Alternatively, after the precursor film heated in the first heating step is cooled to room temperature, the second heating step is conducted. In the first and second heating steps, any heating oven can be used as long as it can successfully attain the crystallization of the precursor film and the growth of the crystal grains. However, it is preferable to use a heating oven whose temperature can be raised at high speed. For example, a lamp relax oven is preferably used. The preferable rate of temperature rise is 50 °C/sec or higher, more preferably 100 °C/sec or higher in either heating step. Another electrode is then provided on the piezoelectric film thus formed on the electrode, thereby obtaining a thin film piezoelectric device. The thin film piezoelectric device of the present invention have various uses owing to the excellent properties thereof. For instance, the thin film piezoelectric device of the present invention can be used as the piezoelectric transducer of an ink jet recording head. The use of the thin film piezoelectric device of the invention is advantageous in that an ink can be jetted at high pressure and that the recording head can be driven by high frequency. A specific example of the recording head in which the thin film piezoelectric device of the present invention is utilized is as shown in Fig. 2. Fig. 2 (a) is a top view of the recording head, and Fig. 2 (b) is a sectional view taken along line A-A ' of Fig. 2 (a). This recording head is prepared by connecting a chip which is a single-crystalline Si substrate 201 having cavities 203 to a glass substrate 202 on which ink channels 204 and an ink fountain 205 are provided. On the single-crystalline Si substrate 201, a thermally-oxidized Si film 206, a lower electrode 207, a piezoelectric film 208 and an upper electrode 209 are provided. An ink is preserved in the ink fountain 205, and supplied to the cavities 203 through the ink channels 204. When voltage is applied to the piezoelectric film 208 through the lower electrode 207 and the upper electrode 209, the cavities 203 are deformed, so that pressure is applied on the ink contained in the cavities 203. The ink is jetted from nozzles 210 by this pressure applied, and ink jet recording is thus attained. Another preferred embodiment of the ink jet recording head is as shown in Fig. 3. In this embodiment, a single-crystalline Si substrate 201 exists also on top of cavities 203 as a thin-layered portion 301. The present invention will now be explained more specifically by referring to the following examples. However, these examples are not intended to limit or restrict the scope of the present invention in any way. Example 1 A silicon substrate having a thickness of 400 µm and a diameter of 3 inches was washed with sulfuric acid, and then heated at 1000 °C for 4 hours in a oxygen atmosphere containing steam. Thus, the Si substrate was oxidized by wet process to form thereon a thermally-oxidized Si film having a thickness of 1 µm. On this film, a Ti film having a thickness of 200 angstrom, and a Pt film having a thickness of 2000 angstrom were continuously formed by the direct current magnetron sputtering method. The precursor film of a piezoelectric film, having a thickness of 3 µm was formed on the Pt film by the RF magnetron sputtering method in which a sintered PZT having a specific composition was used as a target. This precursor film was amorphous. The Si substrate on which the precursor film had been formed was heated in a diffusion oven to crystallize and to sinter the precursor film, thereby obtaining a piezoelectric film. In this heating treatment, the Si substrate was heated at 550°C in an oxygen atmosphere until crystal grains were produced in the precursor film (the first heating step), and then it was further heated at 750°C in an oxygen atmosphere, whereby the crystal grains were grown and sintered (the second heating step). The time for the second heating step was adjusted so as to control the size of the crystal grains. On the piezoelectric film, a Ti film having a thickness of 200 angstrom, and a Au film having a thickness of 2000 angstrom were continuously formed by the direct current magnetron sputtering method, whereby a thin film piezoelectric device was finally obtained. The piezoelectric film thus obtained was found to have a composition represented by the formula Pb(Zr X Ti 1-X )O 3 + YPbO, in which X is 0.52 and Y is 0.05. Further, the surface of the piezoelectric film was observed by a scanning electron microscope to determine the size of crystal grains. The results are as shown in Table 1. The piezoelectric film was cut, and the section thereof was also observed by a scanning electron microscope. As a result, it was found that crystal grains at the inside of the film were so dense that they were not able to be recognized individually. The thin film piezoelectric device obtained was subjected to polarization treatment. Specifically, a voltage of 60 V was applied between the Pt film and the Au film for 30 minutes. Thereafter, the piezoelectric constant d31 was measured. The results are as shown in Table 1. The comparative examples 1-3 of table 1 have a lower piezoelectric constant in comparison to example 4, which is in accordance with the present invention. Sample No. Size of Crystal Grains(µm) d31 (pC/N) (Comp. Example) 1 0.02 18 (Comp. Example) 2 0.33 25 (Comp. Example) 3 0.45 85 (Comp. Example) 4 0.60 95 Example 2 A thin film piezoelectric device was prepared substantially in the same manner as in Example 1. It is noted that X and Y in the formula Pb(Zr X Ti 1-X )O 3 + YPbO, showing the composition of the piezoelectric film were changed as shown in Table 2. Further, the Si substrate on which the precursor film had been formed was heated, in the first heating step, at 550°C until crystal grains were produced in the precursor film, and, in the second heating step, it was further heated at 800°C, whereby the crystal grains were grown and sintered. The time for the second heating step was so adjusted that the size of crystal grains observable from the surface of the piezoelectric film would be in the range of 0.4 to 1 µm. The thin film piezoelectric device obtained was subjected to polarization treatment as in Example 1. Thereafter, the piezoelectric constant d31 was measured. The results are as shown in Table 2. Sample No. X Y d31(pC/N) 1 0.35 0.05 20 Comparative Example 2 0.40 0.40 - - 3 0.40 0.00 80 Invention 4 0.45 0.20 90 Invention 5 0.50 0.10 85 Invention 6 0.50 -0.10 5 Comparative Example 7 0.55 0.30 80 Invention 8 0.55 0.20 85 Invention 9 0.60 0.30 80 Invention 10 0.60 0.10 80 Invention 11 0.65 0.40 - - 12 0.65 0.10 15 Comparative Example With respect to Samples No. 2 and No. 11 shown in the table, the piezoelectric film peeled off the substrate in the course of the second heating step. Example 3 A thin film piezoelectric device was prepared substantially in the same manner as in Example 1. It is noted that a, b, c, e and f in the formula PbTi a Zr b (Mg 1/3 Nb 2/3 ) c O 3 + ePbO + fMgO, showing the composition of the piezoelectric film were changed as shown in Table 3. Further, the Si substrate on which the precursor film had been formed was heated, in the first heating step, at 600°C until crystal grains were produced in the precursor film, and, in the second heating step, it was further heated at 900°C, whereby the crystal grains were grown and sintered. The time for the second heating step was so adjusted that the size of crystal grains observable from the surface of the piezoelectric film would be in the range of 0.4 to 3 µm. The thin film piezoelectric device obtained was subjected to polarization treatment as in Example 1. Thereafter, the piezoelectric constant d31 was measured. The results are as shown in Table 3. Sample No. a b c e f d31(pC/N) 1 0.60 0.20 0.20 0.10 0.05C 50 Comp. Ex. 2 0.60 0.25 0.15 0.10 0.07C 55 Comp. Ex. 3 0.60 0.30 0.10 0.10 0.00 50 Comp. Ex. 4 0.55 0.25 0.20 0.15 0.10C 155 Invention 5 0.55 0.35 0.10 0.00 0.10C 160 Invention 6 0.55 0.35 0.10 0.30 0.00 40 Comp. Ex. 7 0.55 0.40 0.05 0.10 0.00 40 Comp. Ex. 8 0.50 0.20 0.30 0.10 0.10C 25 Comp. Ex. 9 0.50 0.30 0.20 0.10 0.15C 170 Invention 10 0.50 0.35 0.15 0.30 0.07C 175 Invention 11 0.45 0.25 0.30 0.10 0.00 180 Invention 12 0.45 0.30 0.25 0.15 0.00 185 Invention 13 0.45 0.30 0.25 -0.05 0.20C 20 Comp. Ex. 14 0.45 0.35 0.20 0.05 0.05C 200 Invention 15 0.45 0.35 0.20 0.35 0.00 - - 16 0.45 0.40 0.15 0.10 0.00 185 Invention 17 0.45 0.40 0.15 0.10 0.13C 70 Comp. Ex. 18 0.40 0.30 0.30 0.20 0.03C 205 Invention 19 0.40 0.30 0.30 -0.05 0.03C 55 Comp. Ex. 20 0.40 0.35 0.25 0.20 0.20C 210 Invention 21 0.40 0.40 0.20 0.15 0.10C 185 Invention 22 0.40 0.40 0.20 0.10 -0.05C 110 Invention 23 0.40 0.45 0.15 0.10 0.07C 155 Invention 24 0.40 0.55 0.05 0.10 0.20C 65 Comp. Ex. 25 0.35 0.20 0.45 0.10 0.02C 30 Comp. Ex. 26 0.35 0.25 0.40 0.00 0.10C 170 Invention 27 0.35 0.35 0.30 0.00 0.10C 175 Invention 28 0.35 0.35 0.30 0.50 0.03C - - 29 0.35 0.40 0.25 0.05 0.08c 160 Invention 30 0.35 0.45 0.20 0.05 0.10C 155 Invention 31 0.35 0.55 0.10 0.10 0.00 150 Invention 32 0.30 0.25 0.40 0.05 0.07C 70 Comp. Ex. 33 0.30 0.30 0.40 0.05 0.25C 65 Comp. Ex. 34 0.30 0.40 0.30 0.05 0.07C 70 Comp. Ex. 35 0.30 0.50 0.20 0.05 0.10C 70 Comp. Ex. With respect to Samples No. 15 and No. 28 shown in the table, the piezoelectric film peeled off the substrate in the course of the second heating step. Example 4 A thin film piezoelectric device was prepared substantially in the same manner as in Example 1 except that the conditions in the first and second heating steps were changed as shown in Table 4. It is noted that X and Y in the formula Pb(Zr X Ti 1-X )O 3 + YPbO, showing the composition of the piezoelectric film were fixed to 0.45 and 0.10, respectively. The first heating step was conducted at a temperature T1 (°C) shown in Table 4, and the second heating step was conducted at a temperature T2 (°C) shown in the table. It is noted that Sample No. 2 was subjected only to the first heating step which was conducted at 800 °C. The first and second heating steps were conducted with the Si substrate cooled to room temperature therebetween ("discontinuous" in the table), or continuously conducted without cooling the substrate ("continuous" in the table). The size of crystal grains observable from the surface of the thin film piezoelectric device obtained was as shown in Table 4. Further, the thin film piezoelectric device was subjected to polarization treatment as in Example 1. Thereafter, the piezoelectric constant d31 was measured. The results are as shown in Table 4. Sample No. T1 (°C) T2 (°C) Continuous/Discontinuous Size of Crystal Grains (µm) d31(pC/N) 1 600 750 discontinuous 0.4 90 Invention 2 800 - - - - - 3 600 800 continous 0.5 90 Invention 4 450 800 discontinuous 0.5 - - 5 500 1200 discontinuous 1.2 80 Invention 6 700 900 discontinuous 0.8 90 Invention 7 550 1000 discontinuous 1.0 80 Invention 8 600 700 discontinuous 0.3 50 Comp. Ex. The piezoelectric film of Sample No. 2 shown in the table peeled off the substrate in the course of the second heating step, and that of Sample No. 4 was cracked after the second heating step was completed. Example 5 A thin film piezoelectric device was prepared substantially in the same manner as in Example 1 except that the conditions in the first and second heating steps were changed as shown in Table 5. It is noted that a, b, c, e and f in the formula PbTi a Zr b (Mg 1/3 Nb 2/3 ) c O 3 + ePbO + fMgO, showing the composition of the piezoelectric film were fixed to 0.45, 0.45, 0.1, 0.1, and 0.01, respectively. The first heating step was conducted at a temperature T1 (°C) shown in Table 5, and the second heating step was conducted at a temperature T2 (°C) shown in the table. It is noted that Sample No. 2 was subjected only to the first heating step which was conducted at 800 °C. The first and second heating steps were conducted with the Si substrate cooled to room temperature therebetween ("discontinuous" in the table), or continuously conducted without cooling the substrate ("continuous" in the table). Samples Nos. 1 to 8 were heated in a diffusion oven, and Samples Nos. 9 and 10 were heated in a lamp relax oven in which high rate of temperature rise was attainable. Sample No. 9 was heated in the following manner: the sample was heated, in the first heating step, in an oxygen atmosphere by raising the temperature from room temperature to 550 °C with a rate of 100 °C/sec, and then allowed to stand at 550 °C for 10 seconds. Thereafter, the sample was cooled to room temperature, and crystal grains on the surface of the sample were observed; the size of the crystal grains was found to be 0.3 µm. The sample was then subjected to the second heating step in which it was heated at 850 °C for one hour in an oxygen atmosphere. Sample No. 10 was heated in the following manner: the sample was heated, in the first heating step, in an oxygen atmosphere by raising the temperature from room temperature to 550 °C with a rate of 100 °C/sec, and then allowed to stand at 550 °C for 10 seconds. Subsequently, the sample was further heated to 870 °C with a rate of 100 °C/sec, and allowed to stand at the temperature for 10 seconds. Thereafter, it was cooled to 200 °C by natural cooling, and then taken out in the air. The sample was cooled to room temperature, and crystal grains on the surface of the sample were observed; the size of the crystal grains was found to be 0.3 µm. The sample was then subjected to the second heating step in which it was heated at 850 °C for one hour in an oxygen atmosphere. The size of crystal grains observable from the surface of the thin film piezoelectric device obtained was as shown in Table 5. Further, the thin film piezoelectric device was subjected to polarization treatment as in Example 1. Thereafter, the piezoelectric constant d31 was measured. The results are as shown in Table 5. Sample No. T1 (°C) T2 (°C) Continuous/Discontinuous Size of Crystal Grains (µm) d31(pC/N) 1 550 750 discontinuous 1.0 200 Invention 2 800 - - - - - 3 550 800 continuous 1.0 205 Invention 4 450 750 discontinuous 2.0 - - 5 500 1200 discontinuous 0.6 165 Invention 6 700 900 discontinuous 0.7 180 Invention 7 550 1000 discontinuous 0.5 165 Invention 8 600 700 discontinuous 0.3 65 Comp. Ex. 9 550 850 discontinuous 1.2 215 Invention 10 550 870-850 continuous 1.5 220 Invention The piezoelectric film of Sample No. 2 peeled off the substrate in the course of the second heating step, and that of Sample No. 4 was cracked after the second heating step was completed.

Claims: A thin film piezoelectric device comprising: a piezoelectric film which is polycrystalline, and two electrodes by which the piezoelectric film is sandwiched, wherein the size of crystal grains is equal to or less than the thickness of the piezoelectric film, and a substrate for holding the film characterized in that the size of the crystal grains of the piezoelectric film is in the range of 0.4 µm to 3 µm and the piezoelectric film has a thickness of 1 µm to 5 µm and a piezoelectric constant d 31 of 80 pC/N or more. An ink jet recording head comprising as a piezoelectric transducer a thin film piezoelectric device according to claim 1. The thin film piezoelectric device according to claim 1, wherein the piezoelectric film comprises lead zirconate titanate. The thin film piezoelectric device according to claim 3, wherein the piezoelectric film has a composition represented by the following formula: Pb(Zr X Ti 1-X )O 3 + YPbO wherein X and Y are 0.40 ≤ X ≤ 0.6 and 0 ≤ Y ≤ 0.3, respectively. The thin film piezoelectric device according to claim 3, wherein the piezoelectric film further comprises a third component. The thin film piezoelectric device according to claim 5, wherein the third component is lead niobate magnesium. The thin film piezoelectric device according to claim 5, wherein the piezoelectric film has a composition represented by the following formula: PbTi a Zr b (A g B h ) c O 3 + ePbO + (fMgO) n wherein A represents a divalent metal selected from the group consisting of Mg, Co, Zn, Cd, Mn and Ni, or a trivalent metal selected from the group consisting of Sb, Y, Fe, So, Yb, Lu, In and Cr; B represents a quinquevalent metal selected from the group consisting of Nb, Ta and Sb, or a sexivalent metal selected from the group consisting of W and Te; and a to h fulfil the following conditions: a + b + c = 1 , 0.35 ≤ a ≤ 0.55, 0.25 ≤ b ≤ 0.55, 0.1 ≤ c ≤ 0.4, 0 ≤ e ≤ 0.3, 0 ≤ f ≤ 0.15c, g = h = 1/2 , and n=o , provided that when A represents the trivalent metal, B does not represent sexivalent metal, and when A represents the divalent metal and B represents the quinquevalent metal, g is 1/3 and h is 2/3, and only when A is Mg and B is Nb, n is 1. The thin film piezoelectric device according to claim 7, wherein A represents Mg, B represents Nb, g is 1/3, and h is 2 / 3.

Inventors: SHIMADA MASATO, SHIMADA, MASATO, SHIMADA, MASATO, C/O SEIKO EPSON CORP.
Applicants: SEIKO EPSON CORP, SEIKO EPSON CORPORATION
Application year: 1995
Main classification: H01L41
IPC codes: H01L41, B41J2