Magnetic sensor

Abstract: To provide a compact Hall element which has high magnetic sensitivity and a wide measuring range and which is resistant to application conditions such as high temperatures or radiations, a micro-vacuum-tube type Hall element is proposed. A rectangular recess (7) is formed in a surface layer of an insulator layer (10). A negative electrode (1) for emitting electrons and a positive electrode (2) for collecting the electrons are provided on the surface of the insulator layer surrounding the recess with the recess interposed therebetween. A gate electrode (3) is provided on the bottom of the recess so that it faces the negative electrode. Hall electrodes (4) are provided on the surface of both sidewalls which are parallel with the line connecting the centers of width of the negative and positive electrodes. All of these electrodes are disposed in a vacuum.

Description: The present invention relates to a very small and highly sensitive magnetic sensor utilizing the Hall effect. A variety of magnetic sensors are used for detecting or measuring magnetic fields such as superconducting quantum interference device (SQUID) fluxmeters capable of measuring extremely weak magnetic fields of 10 -14 T (tesla) or semiconductor Hall element magnetic sensors able to measure ultra-strong magnetic fields of 10 T or more. Such magnetic sensors are widely used not only for measuring the intensity of magnetic fields but also for detecting currents, or, in combination with magnetic substances, for measuring other physical quantities such as position and acceleration or for switching as switching elements. Fig. 7 shows operable ranges and major application fields of various well-known magnetic sensors (according to Kiyoshi Takahashi et al., "Dictionary of Sensors", Asakura shoten, 1991). In Fig. 7, A denotes the range of semiconductor magnetic sensors, B that of ferromagnetic material magnetic sensors, C that of fluxgate fluxmeters and nuclear magnetic resonance fluxmeters, D that of SQUID fluxmeters, E that of medical and biological magnetic measurements, F that of accelerators, NMR, mass spectrometers, linear motor cars, G that of researches into earth magnetism and H that of current measurements, magnetic memory reading, hall motors and non-contact switches. I denotes the brain magnetic field, J the heart magnetic field, K city noises and L earth magnetism. As shown in Fig. 7, conventional measurement of magnetism has used various magnetic sensors having different operational principles and structures in a wide ranges of measurement, which has resulted in the necessity to properly use them depending on their measuring ranges. Further, when the above described variety of sensors are used respective limitations in their application conditions have to be taken into account. For example, the sensor of a SQUID flux-meter must be cooled to a very low temperature and thus it can not be readily used. Semiconductor magnetic sensors are widely used among conventional magnetic sensors because they are capable of measuring magnetic fields in a relatively wide range. As to the operational principles of semiconductor magnetic sensors, the Hall effect is most commonly applied and utilized as Hall element magnetic sensors. The document EP-A-0 168 312 describes an example of such a semiconductor Hall sensor. The Hall effect will now be briefly described. When a magnetic field (with a magnetic flux density B) is applied in a direction perpendicularly to the direction of a current (I) flowing through a conductor, a Hall electrical field is produced in a direction perpendicular to both the direction of the current and that of the applied magnetic field to generate a voltage across the conductor. This is referred to as a Hall voltage V H which is expressed by: V H = K H ·B·I where d, w, and L respectively represent the thickness, width, and length of the conductor through which the current flows. That is, the magnetic flux density B can be identified by measuring the Hall voltage V H which is proportional to the magnetic flux density B. K H represents a product sensitivity which is expressed by the following equation. K H = R H ·f H /d where R H represents a Hall coefficient, and f H represents a shape factor which is a value related to L/w and a Hall angle ⊖ and approaches 1 with an increase in ⊖, i.e., with increase in Hall mobility µ H = R H ·σ (σ: electrical conductivity) and the magnetic flux density. Therefore, from Equations (1) and (2) we obtain: V H = R H ·f H ·I/d. If we assume a driving under a constant voltage, Equation (3) gives: V H = (w/L)R H ·f H ·σ·B·V where V is the applied voltage. Therefore, the Hall voltage V H can be effectively increased by increasing (w/L), R H , and σ. However, since (w/L) is a parameter which depends on the shape of the device and no significant change occurs in f H when the Hall angle ⊖ is large, R H and σ become the key factors. (a) R H is given by the following equation where n represents an electron density; e represents the charge of electrons; and c represents speed of light. R H = -(nec) -1 (CGS system) That is, R H is inversely proportional to the electron density n. (b) σ is given by the following equation where r represents the time between electron collisions and m* represents the effective mass of electrons. σ = ne 2 τ/m* That is, σ is proportional to n and τ. As apparent from Equations (5) and (6), the electron density n affects R H and τ oppositely. Therefore, it is not an effective factor for increasing both of R H and σ. A magnetic sensor comprising a semiconductor Hall element is compact and capable of measuring the magnitude of a magnetic field in a relatively wide range as shown in Fig. 7. However, its sensitivity and resolution are not satisfactorily suited for measuring magnetic flux densities of 10 -9 T or less. Further, a semiconductor can not be used at high temperatures which cause the semiconductor to rapidly increase its carrier density. In addition, such a device has a problem in that it is susceptible to radiations. Thus, the field of application of such a device is actually limited due to limitations in application conditions. It is an object of the present invention to solve the following two problems. [1] To improve magnetic sensitivity and expand the measuring range, i.e., to improve the sensitivity and to allow a single magnetic sensor to cover a wide measuring range. [2] To expand application conditions, i.e., to give excellent environment - proof characteristics and especially to enable operations at high temperatures. This object is achieved with a magnetic sensor as claimed in claim 1. Specific embodiments of the invention are subject-matter of the dependent claims. In order to solve the above-described problems, a magnetic sensor according to the present invention has a structure similar to that of the so-called field emission type micro-vacuum-tube. In a magnetic sensor having the structure as described above, the Hall mobility can be improved to increase the Hall voltage compared with conventional magnetic sensors constituted by a semiconductor Hall element, and thus the magnetic sensitivity is improved. This is based on the expanded time between collisions r which is an effective means to achieve an enlarged product of the Hall coefficient R H and the electrical conductivity σ that is required for improving magnetic sensitivity as apparent from Equation (4), (5) and (6), and in a magnetic sensor constituted by a Hall element wherein carriers flow in a vacuum, the time between collisions can be expanded by at least one order or more compared with conventional Hall element with carriers flowing in a solid. Since electrons responding to an external magnetic field flow in a vacuum, the sensor suffers ignorable temperature drifts compared to those observed in common solid state devices. Further, being less susceptible to deterioration due to temperature compared with semiconductors, it can be used at high temperatures. In addition, since the magnetic sensor has a structure similar to that of the so-called field emission type micro-vacuum tube, it can be formed on an insulated substrate or an insulator layer on a semiconductor substrate using semiconductor processing techniques into a size equal to or smaller than those of conventional semiconductor magnetic sensors. By providing the Hall electrodes so that they extend from the upper surface of the insulator layer onto the surface of the inner wall of the recess, the electron trapping rate is improved to allow more accurate measurement of magnetic fields. Moreover, the use of a cap of a non-magnetic material prevents the magnetic flux to be measured from being disturbed, which allow further accurate measurement. Embodiments of the invention will be described in more detail below with reference to the drawings, in which: Fig. 1 is a plan view of an embodiment of the magnetic sensor according to the present invention. Fig. 2 is a sectional view of the magnetic sensor taken along the line A-A in Fig. 1. Fig. 3 is a sectional view of the magnetic sensor taken along the line B-B in Fig. 1. Fig. 4 is an enlarged perspective view of a negative electrode of the magnetic sensor shown in Fig. 1. Fig. 5 is a plan view of another embodiment of a magnetic sensor according to the present invention. Fig. 6 is a sectional view of the magnetic sensor taken along the line B-B in Fig. 5. Fig. 7 shows the operational range and field of application of conventional magnetic sensors. Fig. 1 is a plan view of a magnetic sensor embodying the present invention wherein the magnetic field to be detected is applied perpendicularly to the surface of the paper. A rectangular recess 7 is formed in a surface layer of a quartz plate 5, and a negative electrode 1 and a positive electrode 2 are provided on the surface of the quartz plate 5 so that their ends project over the recess 7 from two sides of the rectangle which are opposite to each other. Hall electrodes 4 are provided on the surface of the quartz plate 5 on the remaining two sides of the rectangle. Further, a gate electrode 3 is provided on the bottom of the recess 7 so that it faces the negative electrode 1. The width of the negative electrode 1 and the positive electrode 2 is 1100 µm, and the distance between them is 100 µm. The reference numeral 8 designates a cap for vacuum enclosure. In order to prevent the magnetic flux to be measured from disturbances, the cap 8 is made of glass or other non-magnetic metal. Fig. 2 is a sectional view taken along the line A-A in Fig. 1, the magnetic field to be detected is applied in the downward direction of the figure. It can be seen that the recess 7 is formed in the surface layer of the quartz plate 5 to a depth of 1 µm, and the end portion of the negative electrode 1 and the end portion of the positive electrode 2 project over the recess 7 like eaves. The projecting end of the negative electrode includes at least one electron emitting tip having a small radius of curvature. In the embodiment shown the end portion of the negative electrode 1 has tips in the form of comb teeth. The gate electrode 3 is formed on the bottom of the recess 7 in the vicinity of the end portion of the negative electrode 1 to apply an electrical field that causes the negative electrode 1 to emit electrons. The space defined by the recess 7 and the cap 8 is sealed and evacuated by using port which is not shown. Fig. 3 is a sectional view taken along the line B-B orthogonal to the line A-A in Fig. 1. As apparent from Fig. 1, the Hall electrodes 4 for detecting the Hall voltage appear on this section which is orthogonal to the section shown in Fig. 2. Fig. 4 is an enlarged perspective view of the structure of the end portion of the negative electrode according to the present invention. The end portion of the negative electrode 1 is in the form of a comb formed by 270 pieces of tips 9. A tip 9 is 2 µm in width and 6 µm in length. The tips 9 are arranged with a pitch of 4 µm. The electrical field due to the voltage applied between the gate electrode 3 and the negative electrode 1 causes electrons to be emitted from the end of each edge 9 into the vacuum. The negative electrode 1 and the gate electrode 3 consist of 0.2 µm-thick thin films of tungsten and niobium, respectively. Fig. 5 is a plan view of a magnetic sensor as another embodiment of the present invention wherein the magnetic field to be detected is applied perpendicularly to the surface of the paper. As the insulated substrate, a silicon substrate having an oxide film formed thereon is used instead of the quartz plate. A rectangular recess 7 having a depth of 1 µm is formed like that in the embodiment in Fig. 1 in a 2 µm thick oxide film 10 on a silicon substrate 6, and a negative electrode I and a positive electrode 2 are formed on the surface of the oxide film 10 so that their ends project over the recess 7 from two sides of the rectangle which are opposite to each other. On the remaining two sides of the rectangle, Hall electrodes 4 are provided so that they are extended from the surface of the oxide film 10 along the inner wall of the recess 7. Like the embodiment shown in Fig. 1, a gate electrode 3 is provided on the bottom of the recess 7 so that it faces the negative electrode 1. This embodiment does not use a quartz plate which is expensive especially if it has to have a large diameter Instead a silicon substrate is employed which can be used without any problem since it is more readily processed than a quartz plate by applying techniques for processing semiconductor. Fig. 6 is a sectional view taken along the line B-B in Fig. 5 which clearly shows how the Hall electrodes 4 for detecting the Hall voltage are extended from the surface of the oxide film 10 along the inner wall of the recess 7. The area of the electrodes is thus increased to improve the electron trapping rate, thereby allowing a more accurate measurement. The magnetic sensor according to the present invention has a structure similar to that of the so-called field emission type micro-vacuum-tubes which are recently attracting attention. It is therefore possible to manufacture it with a similar method to manufacturing a micro-vacuum-tubes such as that described by Kanamaru et al. on page 62 of "Semiconductor World", March, 1992. The detection of magnetism with the magnetic sensors shown in the figures is performed as follows. A voltage of approximately 50 V is applied between the negative electrode 1 and the gate electrode 3 to permit the negative electrode 1 to emit electrons. While the emitted electrons are moved to reach the positive electrode 2 by an electric field due to the voltage applied to the positive electrode 2, they are deflected by a force due to an existing magnetic field. Thus, a Hall voltage is produced between the two Hall electrodes 4. Table 1 shows the properties of a magnetic sensor having the above described structure according to the present invention in comparison with those of a conventional silicon Hall element magnetic sensor. Product Sensitivity Unit V/AT Magnetic Sensor comprising a typical silicon Hall element (supply current: 0.3 mA) 370 Micro-Vacuum-Tube Type Magnetic Sensor of the present invention gate voltage: 50V anode voltage: 200V anode current: 15 µA 420 (detectable down to 10 -12 T) Error in Linearity % < 0.2 (B <0.4T) < 0.1 (B < 1T) Dimensions of Sensing Section µm 3 120x120x12 110x100x1 Offset Voltage mV < 10 < 0.01 Temperature Dependence of Offset Voltage µV/°C 50 < 0.01(t < 400°C) As shown in the table, the product sensitivity as a sensitivity for magnetic sensing is improved by a factor of ten or more, which results in expansion of the range of measurement. With respect to other items, it will be evident that the invented magnetic sensor is superior to that of conventional silicon Hall elements as having an error in linearity improved by a factor of five and other properties by a factor of ten or more except for the dimensions of the sensing section which are approximately the same. Further, the silicon Hall element magnetic sensor can not be used at temperatures above 100°C due to rapid increase in carrier density caused by intrinsic conduction. On the other hand, the magnetic sensor according to the present invention can be used at temperatures up to 400°C and is less susceptible to radiations. With respect to geometry, it can be made equal to or even smaller than conventional magnetic sensors utilizing a semiconductor Hall element. The insulated substrate is not limited to the quartz plate and the silicon substrate having an oxide film formed thereon as described above, but may be modified to consist of, for example, ceramics such as silicon nitride, or a silicon nitride film formed on a polyimide or silicon substrate. The tip of the negative electrode may be formed into shapes other than the comb-like shape as described above, such as the shape of a wedge, as long as it allows the electrical field intensity to increase. In addition, although only the sensing section on the insulated substrate is sealed in vacuum by the cap in the above-described embodiment, it is apparent that the entire insulated substrate, i.e., the entire chip, may be enclosed in a vacuum container. As explained with the embodiments, the present invention provides a magnetic sensor which has higher sensitivity and a wider measuring range compared with conventional Hall element magnetic sensors. In addition, the electron flow in a vacuum according to the present invention, unlike that in a solid, provides an advantage of being not affected by radiation or elevated temperatures, which enables the sensor to be used under expanded application conditions.

Claims: A magnetic sensor comprising: an insulated substrate (5; 6, 10) having a rectangular recess (7) formed in a surface layer (10) thereof, an insulator layer (5; 10) surrounding said recess (7), a positive electrode (2) provided on an upper surface of the insulator layer so that its end projects over the recess from a first side of said rectangle, a negative electrode (1) provided on said upper surface of the insulator layer so that its end projects over the recess from a second side of the rectangle opposite to said first side, wherein the projecting end of the negative electrode includes at least one electron emitting tip (9), two Hall electrodes (4) provided on said insulator layer at opposing third and fourth sides of the rectangle, the third and fourth sides being different from said first and second sides, and a gate electrode (3) provided on the bottom of the recess so that it faces said negative electrode, wherein said negative electrode and positive electrodes, said Hall electrodes and said gate electrode are disposed in a vacuum. The sensor according to claim 1 wherein the Hall electrodes (4) are provided so that they extend from said upper surface of the insulator layer (10) along the surface of the inner wall of the recess (7). The sensor according to claim 1 or 2 wherein the insulated substrate (6, 10) is obtained by forming an insulator layer (10) on a semiconductor substrate (6). The sensor according to any one of claims 1 to 3 further comprising a cap (8) made of a non-magnetic material. The sensor according to any one of claims 1 to 4 wherein the projecting end of the negative electrode (1) is in the form of comb teeth. The sensor according to any one of claims 1 to 4 characterized in that the projecting end of the negative electrode (1) is in the form of a wedge.

Inventors: MATSUZAKI KAZUO, MATSUZAKI, KAZUO
Applicants: FUJI ELECTRIC CO LTD, FUJI ELECTRIC CO. LTD.
Application year: 1995
Main classification: G01R33
IPC codes: G01R33, H01L43, H01J21