MAGNETICALLY ENHANCED MULTIPLE CAPACITIVE PLASMA GENERATION APPARATUS AND RELATED METHOD

Abstract: Plasma generation apparatus, and a related method for its operation, for producing a uniform high-density plasma with good process control and process repeatability. The apparatus includes multipe side electrodes (62.1, 62.6) to which first radio-frequency (rf) power source (57) is connected to provide a transverse electric field for plasma generation, and a pair of convention, upper and lower, electrodes (50, 52) to which a second rf power source (61) is connected to provide separate control of the plasma energy as used in a process such as dry etching. In addition, a magnetic field coil (60) provides a magnetic field perpendicular to the transverse electric field, for enhancement of plasma generation. Because the plasma is generated by a relatively lower frequency (50-200 MHz) power source, as compared with a microwave power source, the magnetic field strength needed to achieve magnetically enhanced operation at or near the electrom cyclotron resonance (ECR) condition is well under 100 gauss, which can be provided at relatively low cost. Moreover, the apparatus can be operated efficiently over a relatively wide range of chamber pressures. Ideally, the number of side electrodes used for plasma generation should be four or six, with each electrode receiving a phase delayed signal as compared with an adjacent electrode, to produce a rotating electric field that further enhances uniformity of plasma formation.

Description: MAGNETICALLY ENHANCED MULTIPLE CAPACITIVE PLASMA GENERATION APPARATUS AND RELATED METHOD BACKGROUND OF THE INVENTION This invention relates generally to plasma generation techniques, particularly as used in a dry etching process in the fabrication of integrated semiconductor devices. In dry etching, process gases are supplied to a vacuum chamber and radio-frequency (rf) energy generates and sustains a plasma cloud within the chamber. Ions in the plasma cloud bombard a workpiece, usually in the form of a semiconductor wafer, which may be located in the chamber immediately adjacent to the plasma, or. in a separate processing ' chamber into which ions from the plasma are drawn. The ions either etch the workpiece or assist the etching, and the etching process may be made selective by patterning a protective coating applied to the workpiece prior to etching. Various plasma generation techniques have been used and proposed, and specific prior art configurations are discussed further below, with reference to the drawings. In general, however, there are three types of plasma generation approaches: capacitive, inductive, and microwave. In the more conventional capacitive plasma approach, the plasma is formed between a pair of parallel plate electrodes, to which radio-frequency (rf) energy is applied, to one or both plates. A variant of the parallel plate approach is the magnetically enhanced reactive ion etch (MERIE) plasma generation apparatus, in which a magnetic field enhances the formation of ions in the plasma. Both the parallel plate configuration and the MERIE configuration use a single rf power generator. Inductive plasma generators use an inductive coil, either a planar coil, a cylindrical coil or any of various other types of coils to deliver rf power into the plasma chamber. A separate rf generator supplies energy to at least one plate electrode in the chamber, to control ion energy and direction. The inductive plasma may also employ a magnetic enhancement device, such as a Helicon source. In magnetically enhanced microwave (MEMW) plasma generators, energy is supplied to the plasma chamber at microwave frequency, through a waveguide. As in the inductive plasma generator, a second power generator supplies rf energy through an electrode plate, to control the plasma. Magnetic enhancement is applied if a high density plasma is desired, because at microwave frequencies the oscillated electrons in the plasma do not have enough kinetic energy to generate a requisite population of ions for etching. In the presence of an appropriate magnetic field, usually applied through a cylindrical coil around the chamber, the electrons gyrate in resonance with the microwave frequency, a condition referred to as electron cyclotron resonance (ECR). Each of the prior art approaches to plasma generation has its advantages and disadvantages. The more conventional parallel plate capacitive plasma approach has the advantage of being a simple, relatively inexpensive, and mature technology, providing good process control and good repeatability of results. For these reasons, most manufacturing technology today continues to use this approach. Its principal disadvantage is that it is limited to relatively high chamber pressures, typically 100 millitorr and above for a reactive ion etch (RIE) reactor and 20 millitorr or above for a MERIE reactor. Below 20 millitorr, the mean free path of electrons in the plasma is comparable to the distance between the electrodes, and the electrons are unable to generate a high enough plasma density. Another disadvantage is that there is no independent control of plasma energy. Inductive and microwave plasma generators overcome the disadvantages of the parallel plate plasma, but have significant disadvantages of their own. The advantages are that the plasma has a high density and can be generated at low pressure. Moreover, plasma generation and energy control are effectively decoupled by virtue of the separate power sources that are used. However, inductive and microwave plasma generators are more complex and more expensive than parallel plate configurations. When the rf power is applied to the cathode, the plasma source power does not have a proper grounding path. This may cause plasma process drift and non-reproducibility. Accordingly, there is still a need for an improved plasma generation technique, preferably one that has the advantages of both parallel plate plasma and the microwave or inductive plasma. The present invention satisfies this need. SUMMARY OF THE INVENTION The present invention resides in a magnetically enhanced multiple capacitive plasma generation apparatus, and a related method for its operation. Basically, the apparatus of the invention is a combination of a magnetically enhanced high-frequency rf source, using multiple capacitive plates located at the chamber sidewall, a conventional parallel plate rf source for plasma biasing and control, and a surrounding magnetic coil to provide a magnetic field perpendicular to the rf fields between the multiple capacitive plates. Briefly, and in general terms, the invention resides in apparatus for use in a plasma chamber having means for introducing plasma process gas and evacuable to preselected operating pressures for processing a substrate at a substrate support face defined by a support within the chamber. The apparatus comprises means for generating a first radio- frequency (rf) electric field in the chamber, referred to as a transverse electric field and directed across the chamber and generally parallel to the substrate support face; means for generating a magnetic field in the chamber generally perpendicular to the first rf electric field; means for generating a second rf electric field generally perpendicular to the first rf electric field; and means for varying at least one of the electric and magnetic fields to control the energy and density of the resulting plasma. In the disclosed embodiment, the first rf power source operates at a frequency of approximately 13.5 megahertz (MHz) or higher, and the second rf power source operates at a frequency of approximately 13.5 MHz or less. More specifically, the first rf power source operates at a frequency in the range of approximately 50 to 200 MHz, and the second rf power source operates at a frequency in the range of approximately 400 kHz to 13.5 MHz. With the first rf power source operating at a frequency of approximately 200 Mhz, the means for generating a magnetic field needs to produce a field strength of less than approximately 100 gauss, for operation at or near an electron cyclotron resonance condition, i.e. a radio-frequency ECR condition. Preferably, there are n side electrodes, where n is at least four, and the first rf power source includes means for generating n rf signals, delayed from one to the next by a phase angle of (360/n)°, for application to the respective side electrodes to produce a rotating electric field in the plasma chamber. The optimum number of side electrodes is probably four or six. More than six adds complexity and cost, but fewer than four side electrodes does not sufficiently enhance the uniformity of plasma generation. In terms of a novel method, the invention comprises the steps of applying a first radio-frequency (rf) power signal to a plurality of side electrodes, disposed about the chamber sidewall, to produce an electric field transverse to the chamber sidewall; generating a magnetic field in the chamber generally perpendicular to the transverse electric field; and applying a second rf power signal to a pair of spaced, opposed upper and lower electrodes to produce an electric field in the chamber generally perpendicular to the transverse electric field, whereby the second rf signal provides control of the plasma energy to effect a desired process on a workpiece placed adjacent to one of the upper and lower electrodes for processing. The method provides separate controls of plasma energy and formation, operates over a wide range of chamber pressures and provides good process control and process repeatability. It will be appreciated from the foregoing that the present invention represents a significant advance in plasma generation techniques. In particular, the invention provides a uniform, high-density plasma in a chamber that can be operated over a relatively wide range of pressures, and also provides good process control and process repeatability. The invention also has independent controls for plasma generation and plasma energy, and is less expensive and less complex than microwave ECR sources. Other aspects and advantages of the invention will become apparent from the following more detailed description, taken in conjunction with the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS FIGURES la, lb and lc are simplified schematic views of three variants of capacitive plasma generation apparatus of the prior art; FIGS. 2a, 2b and 2c are simplified schematic views of three variants of magnetically enhanced capacitive parallel plate plasma generation apparatus of the prior art; FIGS. 3a, 3b and 3c are simplified schematic views of three variants of inductive plasma generation apparatus of the prior art; FIGS. 4a, 4b and 4c are simplified schematic views of three variants of magnetically enhanced microwave (MEMW) plasma generation apparatus of the prior art; FIG. 5 a simplified schematic view of a magnetically enhanced multiple capacitive plasma generation apparatus in accordance with the invention; FIG. 6 is a simplified three-dimensional and schematic view of apparatus similar to that shown in FIG. 5, but including three pairs of side electrodes and with a processing chamber downstream of a plasma generation chamber; FIG. 7 is a three-dimensional view similar to FIG. 5, but with two pairs of side electrodes; FIG. 8 is a schematic view of associated apparatus for generating radio-frequency (rf) power to be applied to the two pairs of side electrodes in the apparatus of FIG. 7; FIG. 9 is a set of four waveforms of rf power signals generated in the apparatus of FIGS. 7 and 8; FIGS. lOa-lOd are diagrams depicting how the apparatus of FIGS. 7 and 8 generate a rotating electric field (E field) vector; FIG. 11 is a block diagram of a quadrature rf power splitter for use in the apparatus of FIG. 8; and FIG. 12 is a block diagram of an alternative arrangement for generating four rf power signals to be applied to two pairs of side electrodes. DESCRIPTION OF THE PREFERRED EMBODIMENTS As shown in the drawings for purposes of illustration, the present invention is concerned with a novel technique for generating a plasma suitable for use in plasma processing of workpieces, as in reactive ion etching (RIE) of semiconductor wafers. One form of conventional plasma generation apparatus uses a pair of capacitive parallel plates, indicated at 10 and 12 in FIGS, la-lc. Radio-frequency (rf) power is applied to one or both plates through a series capacitor 14. The parallel plate capacitive configuration is simple, relatively inexpensive to build, and provides relatively good process control and repeatability. Its principal drawback is that it is limited to operation only at relatively high pressures, typically above 100 millitorr. At lower pressures, the mean free path of electrons in the plasma region between the plates is comparable with the distance between the plates, and the plasma density is low. Another important disadvantage is that there is no separate control of the plasma energy. A workpiece (not shown) is typically positioned on the lower electrode 12, and ions in the plasma perform a processing function (etching) as they are drawn to the workpiece. The rf power applied to the plates affects both the generation of the plasma and its utilization as a processing tool. Ideally independent control of these functions is preferred. FIGS. 2a-2c depict three variants of capacitive plate plasma generators with magnetic enhancement. That is to say, a magnetic field is applied to the plasma region between the parallel plates 10 and 12 or behind the plates, in a direction either perpendicular to the electric field between the plates or parallel to the chamber walls. The figures depict three alternative approaches for generating the magnetic field, which enhances the formation of ions in the plasma. Electrons tend to gyrate about lines of magnetic flux, so the mean free path length of electrons is increased, and the likelihood of collisions between electrons and atoms is increased, which results in a higher rate of production of ions. These magnetically enhanced parallel plate configurations are known by the acronym MERIE, for magnetically enhanced reactive ion etching apparatus. Because plasma formation is enhanced, a MERIE device can operate at lower pressures, in the region of 10-200 millitorr, than the conventional parallel plate apparatus. However, as with parallel plate systems without magnetic enhancement, the MERIE device has only one rf power source, and therefore no effectively independent control of plasma density and energy, although the magnetic field can be considered as providing a weak independent control of plasma density. FIGS. 3a-3c depict another type of plasma generator of the prior art, using inductive coupling to inject rf power into a plasma chamber. In these configurations, two rf power sources are employed. One supplies the power to generate and sustain the plasma and is supplied through some type of inductive coil, either a cylindrical coil 20, as in FIGS. 3a and 3c, or a planar coil 22, as in FIG. 3b. A second source of rf power is connected to a lower electrode 24 and controls the plasma energy utilized in the etching or other process. The configuration of FIG. 3c also provides magnetic enhancement, as indicated by the magnetic field coil 26. FIGS. 4a-4c depict yet another type of prior art apparatus for plasma generation, the magnetically enhanced microwave (MEMW) plasma generator. Rf power at microwave frequencies, which may be generally defined as falling within the range 300 MHz (megahertz) to 300 GHz (gigahertz), is coupled into a plasma chamber by some means, usually through the top of the chamber, as indicated at 40. A lower frequency rf power source is connected to a lower electrode 42, for plasma control, as in the inductive plasma generators. Magnetic enhancement is provided by field coils, as indicated at 44. These configurations are referred to by the acronym MEMW (magnetically enhanced microwave) plasma generators. If the strength of the magnetic field is appropriately selected, electrons in the plasma gyrate at a frequency in resonance with the microwave frequency, a condition referred to as electron cyclotron resonance (ECR). Alternatively, a slightly different magnetic field strength may be selected, for operation in an "off- resonance" condition. Both inductive and MEMW plasma generators have the advantages of operating at high plasma density and low pressure, and providing separate plasma generation and energy controls. Their disadvantages are that they are complex and expensive, and provide limited process repeatability and control at low pressures. The present invention has the advantages of both the parallel plate capacitive plasma generator and the inductive and MEMW configurations. The invention retains parallel plate electrodes for plasma energy control, and has magnetic enhancement using a relatively inexpensive magnetic field generator. For plasma generation, the invention uses a first rf generator connected to multiple side electrodes. The basic configuration is shown in FIG. 5. Parallel plate electrodes 50 and 52 are positioned above and below a plasma region 54. A semiconductor wafer (not shown) is held against either the lower electrode 52 or the upper electrode 50. In the configuration shown, the upper electrode 50 is grounded and rf power is applied to the lower electrode 52 to control the plasma. Alternatively, rf power may be applied to both electrodes 50 and 52, through an appropriate rf power splitter (not shown). The frequency of this rf source may be in the range 400 kHz - 13.5 MHz. Rf power to generate the plasma is supplied through side electrodes 56 and 58, one of which is shown as grounded and the other connected to a second rf power source, having a frequency above 13.5 MHz and preferably 50-200 MHz. The electric field generated between the side electrodes 56 and 58 is indicated by vector E. Magnetic field coils 60 are positioned around the plasma chamber, to provide a magnetic field, indicated by vector B, perpendicular to the E field. The rf power supplied to the side electrodes 56 and 58 is controlled by a power controller 57. Similarly, the rf power applied to the upper and lower plates 50 and 52 is controlled by power controller 51. Control of rf power may be conveniently effected by varying the voltage of the rf signals. The strength of the magnetic field produced by the field coils 60 is controlled by a third controller 61, which varies the current supplied to the magnetic field coils. A key advantage of the apparatus of the invention is that a relatively weak magnetic field is needed to achieve the electron cyclotron resonance (ECR) condition, as compared with the magnetic field needed in a magnetically enhanced microwave (MEMW) system. A similarly weak magnetic field is needed for the off-resonance condition. Simply stated, the reason for this difference in magnetic field strength is that a much stronger magnetic field is needed to cause electrons to gyrate at microwave frequencies than is needed at lower radio frequencies. As further explained below, use of the present invention, with its relatively weak magnetic field, produces higher collision energies than the microwave system. The following mathematical analysis highlights the advantages of the invention. First, it is useful to compare the oscillation distance and energy of an electron subjected to an oscillating electric field between two electrodes. The oscillation distance S e and the electron energy E e are given by: o where: e = electron charge, m = electron mass, V 0 = voltage between the electrodes, D = distance between the electrodes, and ω = angular frequency of rf power. For D = 200 mm and V 0 = 2,000 volts, the following values of electron oscillation distance and energy may be calculated: Frequency s e E e 400 kHz 278 m 1.39 x 10 6 ev 13.56 MHz 24 cm 1.20 x 10 3 ev 200 MHz 0.11 cm 5.55 ev 2.45 GHz 7.41 x 10 "3 mm 3.70 x 10- 2 ev The electton gyration radius r g is given by the expression: r g = 2.38 (T e ) B-\ where: T e = electron energy in electron-volts (ev), and B — magnetic field strength (gauss). Therefore, the electron gyration radius (in cm) may be calculated as follows for various values of B and T e : Electton Energy Magnetic Field Strength (gauss) (ev) 100 200 300 875 10 .075 cm .038 cm .025 cm .0086 cm 20 .106 cm .053 cm .035 cm .012 cm 50 .168 cm .084 cm .056 cm .019 cm 100 .238 cm .119 cm .079 cm .027 cm One significance of these data is that 875 gauss is the approximate magnetic field sttength that is needed to achieve the ECR condition for a microwave plasma generator operating at a frequency of 2.45 GHz. This can be calculated from the expression for gyration frequency, which is: f = eB 2πm The magnetic field strength needed to achieve ECR at a frequency of 200 MHz, however, is only 71.4 gauss. From the table above, the gyration radius values for the 100 gauss field sttength are clearly larger than those obtained for 875 gauss, but are still less than a centimeter. More importantly, it is much less expensive to construct a magnetic field generator to produce the lower field strength of under 100 gauss, than to construct one with a field strength of 875 gauss, for use in apparatus operating at microwave frequen¬ cies. It is also useful to compare electron collision energies and rates of a MEMW system in comparison with the magnetically enhanced multiple capacitive (MEMC) plasma generation apparatus of the present invention, both operating in the ECR condition. The mean free path of electrons in the plasma depends on the composition of the plasma and primarily on the pressure. For neutral argon gas, the mean free path lengths at various pressures are: 1 mtorr 48 mm 10 mtorr 4.8 mm 100 mtorr : 0.48 mm The following table compares the two systems, for various selected pressures and electron energies: Note that the collision energy is significantly higher in the system of the invention, for the same assumed pressure and electron energy. The present invention provides better independent control of the energy and density of the plasma. In prior systems with decoupled plasma energy and density conttols, microwave or inductively coupled rf power was input to the chamber and was varied in power to control the plasma density, while the plasma energy was controlled by the power supplied to an rf bias electrode. In fact, the power applied to the plasma (the source power) and the power applied to the bias electrode (the bias power) both affect the plasma energy. As the source power is increased, more plasma gas particles are ionized, producing a higher plasma density. However, as the plasma density is increased there is an increase in current through the plasma sheath and a lower associated voltage drop. The dc bias associated with the plasma therefore drops and this is a measure of the energy of ions impinging on the substrate from the plasma. Increasing the bias power also increases the plasma energy. In theory, then, plasma density can be increased by simply increasing the rf plasma source power, without increasing the plasma energy at the same time. However, increasing the plasma source rf power produces high-energy ions, so that increasing the plasma density by increasing the plasma source rf power is accompanied by an unwanted increase in plasma energy. In the present invention, plasma density is enhanced by increasing the sttength of the magnetic field. The magnetic field causes electtons in the plasma to gyrate and produce more collisions, which increases the plasma density without increasing the energy. In fact dc bias, and with it the plasma energy, are reduced as a result of the increased plasma density. In brief, the invention provides three conttols over plasma density and energy, and affords more independent control over these parameters. In the embodiment of FIG. 6, there are three pairs of side electrodes, shown at 62.1 - 62.6. As will be discussed with respect to FIGS. 8 and 9, the side electrodes are connected in pairs of diametrically opposed electtodes, with each plate being supplied with an rf signal that is delayed in phase with respect to an adjacent electrode. For six electtodes, the phase delay between adjacent electtodes in the FIG. 6 embodiment is (360/6)° or 60°. Edges of adjacent electrodes are shown as being parallel with each other, but not parallel with the principal axis of the plasma chamber, to smooth any discontinuities that arise from having abrupt terminations in the electrode surfaces. FIG. 6 also depicts a configuration in which the plasma is utilized in a downstream processing chamber 64. Basically, in designing the specific structure of the processing system the lower electtode may be raised for in situ plasma processing, or lowered for downstream processing. FIG. 7 shows an embodiment similar to that of FIG. 6, but in which there are four side electtodes 66.1 - 66.4, uniformly spaced about the plasma chamber. In this case, the rf signals applied to adjacent side electrodes are displaced in phase by 90°, as shown in FIG. 8. An rf signal is applied to a phase delay and splitting circuit 68, which generates four separate signals, on lines connected to the side electtodes 66.1 - 66.4, respectively. FIGS. 9 and 10a- lOd show how the circuit of FIG. 8 produces a rotating electric field (shown by vector E). FIG. 9 shows the waveforms of the rf signals applied to the electrodes 66.1 - 66.4, respectively. These are alternating current (ac) signals displaced by 90° from one electrode to the next. FIG. 10a shows the direction of the peak E-field vector at a time corresponding to A in FIG. 9. The vector is directed from electtode 66.3 to electtode 66.1. Ninety degrees later in the cycle, at time B in FIG. 9, the peak E-field vector is directed from electtode 66.4 to electrode 66.2, as shown in FIG. 10b. After another ninety degrees, at time C in FIG. 9, the vector is directed from electrode 66.1 to electrode 66.3. And after a further ninety degrees, at time D in FIG. 9, the vector is directed from electtode 66.2 to electrode 66.4. It will be seen from FIGS, lla-lld that effect of the rf signals applied to the four side electrodes is to produce a rotating electric field. This enhances uniformity of plasma formation. FIG. 11 shows one way of implementing the rf phase delay and splitting circuit 68 of FIG. 8. The circuit includes a 0°-180° splitter 70 and two 0°-90° splitters 72 and 74. Since the splitters cannot, in general, be implemented without some level of angle error, the splitter 70 is assumed to introduce a fixed error α. Thus, if the input to splitter 70 is assumed to be a signal V- at angle 0°, the outputs will be V-/2 at an angle α and V 2 /2 at an angle (α + 180)°. If the other splitters 72 and 74 are assumed to introduce a fixed error θ, and an amplification factor A, the outputs of splitter 72 will be signals AV- at angles (α +θ) and (α+θ+90)°, and the outputs of splitter 74 will be signals AV- at angles (o- 0+180)° and (o +0+270)°. Since the same errors appear in all four outputs they do not adversely affect operation of the invention. The 180° splitter 70 can be implemented as simple inductive element to provide the desired phase reversal. The 90° splitters 72 and 74 can be implemented with conventional rf inductive and capacitive components connected in T- or pi-sections. FIG. 12 depicts an alternative approach for generating four rf power signals to be applied to the electrodes 66.1-66.4, respectively. This apparatus includes a master rf power supply 80, and a slave rf power supply 82 that is coupled to the master rf power supply through a 90° phase delay circuit 84. The apparatus further includes two 0°-180° splitters 86 and 88 and two conventional matching networks 90 and 92. Power signals from the rf power supplies 80 and 83 are connected through the matching networks 90 and 92 to respective 0°-180° splitters 86 and 88. Splitter 86 generates rf power signals at angles 0° and 180° for connection to electrodes 66.1 and 66.3, respectively, and splitter 88 generates rf power signals at angles 90° and 270° for connection to electtodes 66.2 and 66.4, respectively. It will be appreciated from the foregoing that the present invention represents a significant advance in the field of plasma generation apparatus. In particular, the invention combines the advantages of conventional parallel plate plasma generation with those of inductive plasma generation. The resulting apparatus can be operated efficiently at either high or low pressures and provides separate plasma control and good process control and repeatability. Moreover, for operation at or near the electron cyclotron resonance (ECR) condition, a much weaker (and therefore less expensive) magnetic field is needed than for operation of a comparable microwave plasma apparatus at the ECR condition. Although a number of embodiments of the invention have been described in detail, it will be understood that various modifications may be made without departing from the spirit and scope of the invention. Accordingly, the invention should not be limited except as by the appended claims.

Claims: CLAIMS I claim: 1. Apparatus for use with a plasma chamber having upper and lower walls, a sidewall, and the capability of maintaining a gaseous plasma processing environment and of being evacuable to preselected operating pressures, and for use with first and second sources of radio-frequency (rf) power, said apparatus comprising: a plurality of side electtodes, disposed about the chamber sidewall, the electrodes being adapted to receive power from a first rf power source to produce a transverse electric field in the chamber capable of supporting a plasma discharge; means for generating a magnetic field in the chamber generally perpendicular to the transverse electric field capable of enhancing plasma density; a pair of spaced upper and lower electrodes, at least one of which is adapted to receive power from a second source of rf power, the upper and lower electrodes being disposed to produce an electtic field within the chamber generally perpendicular to the transverse electtic field; and a controller for varying the rf power to at least one of the upper and lower electrodes; whereby the plasma energy applied to a workpiece placed adjacent to one of the upper and lower electrodes for processing may be controlled generally independently of plasma formation. 2. Apparatus as defined in claim 1, wherein: the first rf power source operates at a frequency of approximately 13.5 megahertz (MHz) or higher; and the second rf power source operates at a frequency of approximately 13.5 MHz or lower. 3. Apparatus as defined in claim 2, wherein: the first rf power source operates at a frequency in the range of approximately 50 to 200 MHz; and the second rf power source operates at a frequency in the range of approximately 400 kHz to 13.5 MHz. 4. Apparatus as defined in claim 2, wherein: the first rf power source operates at a frequency of approximately 50-100 Mhz; and the means for generating a magnetic field produces a field strength of less than approximately 100 gauss, for operation at or near an electron cyclotron resonance condi- tion. 5. Apparatus as defined in claim 1, wherein: there are n side electrodes, where n is at least four; the first rf power source includes means for generating n rf signals, delayed from one to the next by a phase angle of 360/n degrees, for application to the respective side electrodes to produce a rotating electtic field in the plasma chamber. 6. Apparatus as defined in claim 5, wherein: the number n of side electrodes is four. 7. Apparatus as defined in claim 5, wherein: the number n of side electrodes is six. 8. A method for operating a plasma chamber having upper and lower electrodes and a sidewall, evacuable to preselected operating pressures, and capable of containing plasma process gasses, the method comprising the steps of: applying a first radio-frequency (rf) power signal to a plurality of side electrodes, disposed about the chamber sidewall, to produce an electtic field transverse to the chamber sidewall, for supporting a plasma discharge; generating a magnetic field in the chamber generally perpendicular to the ttansverse electric field, for enhancing the plasma density; and applying a second rf power signal to a pair of spaced, opposed upper and lower electrodes to produce an electtic field in the chamber generally perpendicular to the transverse electric field, whereby the second rf signal provides control of the plasma energy to effect a desired process on a workpiece placed adjacent to one of the upper and lower electrodes for processing. 9. A method as defined in claim 8, wherein: the step of generating the first rf power signal produces a signal at a frequency approximately 13.5 megahertz (MHz) or higher; and the step of generating the second rf power signal produces a signal at a frequency of approximately 13.5 MHz or lower. 10. A method as defined in claim 9, wherein: the step of generating the first rf power signal produces a signal at a frequency in the range of approximately 50 to 200 MHz; and the step of generating the second rf power signal produces a signal at a frequency in the range of approximately 400 kHz to 13.5 MHz. 11. A method as defined in claim 9, wherein: the step of generating the first rf power signal produces a signal at a frequency of approximately 50-100 Mhz; and the step of generating a magnetic field produces a field strength of less than approximately 50-100 gauss, for operation at or near an electron cyclotron resonance condition. 12. A method as defined in claim 8, wherein: there are n side electrodes, where n is at least four; the step of generating the first rf power signal includes generating n rf signals, delayed from one to the next by a phase angle of 360/n degrees, for application to the respective side electrodes to produce a rotating electtic field in the plasma chamber. 13. A method as defined in claim 12, wherein: the number n of side electrodes is four. 14. A method as defined in claim 12, wherein: the number n of side electrodes is six. 15. A method for generating a controllable plasma within a plasma processing chamber adapted to be maintained at preselected operating pressures and into which may be introduced process gases for processing a substrate at a substrate support face defined by a support within the chamber, the method comprising the steps of: generating a first radio-frequency (rf) electric field in the chamber across the substrate support face; generating a magnetic field in the chamber transverse to the first rf electric field; generating a second rf electric field ttansverse to the first rf electric field; and varying at least one of the electric and magnetic fields to control the energy and density of the resulting plasma. 16. A method as defined in claim 15, and further including the step of rotating the first rf electtic field. 17. A method as defined in claim 15, wherein the step of varying one of the electric and magnetic fields includes varying the magnetic field while maintaining the electtic fields constant, to obtain a desired plasma density without significantly affecting the plasma energy. 18. A method as defined in claim 17, wherein the magnetic field is increased in strength to obtain a desired high plasma density without increasing the plasma energy. 19. A method as defined in claim 15, wherein the second rf electtic field is generated by capacitively coupling rf power to at least one electrode of a first pair of electtodes positioned generally parallel to and on opposite sides of the substrate support face. 20. A method as defined in claim 19, wherein the other electrode of the first pair of electrodes is grounded. 21. A method as defined in claim 19, wherein the other electrode of the first pair of electtodes is rf powered, with a phase delay of 180° relative to the opposite electrode of the pair. 22. A method as defined in claim 15, wherein the first rf electtic field is generated by capacitively coupling rf power to at least one electrode of at least one additional pair of electrodes disposed in surrounding relationship to the chamber environment. 23. A method as defined in claim 22, wherein a plurality of additional pairs of electtodes are provided in symmettical disposition, with each pair of additional electrodes being in opposing relationship. 24. A method as defined in claim 23, wherein one of each pair of additional electrodes is rf powered, but with 180° phase delay relative to the opposite electtode of the pair. 25. A method as defined in claim 15, wherein the magnetic field is provided by at least one magnetic field coil positioned about the chamber. 26. A method as defined in claim 15, wherein the magnetic field has a strength of about one hundred gauss or less. 27. A method as defined in claim 26, wherein the rf frequencies and magnetic field are related to each other for operation at or near an electton cyclotron resonance condition. 28. A method as defined in claim 16, wherein the plasma is confined to a radially symmettical region, and in which said first electtic field is generated by a plurality of electrodes arranged radially symmetrically about the chamber wall. 29. Apparatus for use in a plasma chamber evacuable to preselected operating pressures and capable of maintaining a gaseous wafer processing environment, for processing a substrate at a substrate support face defined by a support within the chamber, the apparatus comprising: first electrodes for supporting a first radio-frequency (rf) electric field directed across the substrate support face; at least one magnetic field support device for supporting a magnetic field in the chamber transverse to the first rf electtic field; second electtodes for supporting a second rf electtic field ttansverse to the first rf electtic field; and a controller to vary at least one of the electric and magnetic fields to control the energy and density of the resulting plasma. 30. Apparatus as defined in claim 29, and further including means for rotating the first rf electtic field. 31. Apparatus as defined in claim 29, wherein the controller varies the magnetic field while maintaining the electric fields constant, to obtain a desired plasma density without significantly affecting the plasma energy. 32. Apparatus as defined in claim 31, wherein the controller increases the sttength of the magnetic field to obtain a desired high plasma density without increasing the plasma energy. 33. Apparatus as defined in claim 29, wherein said second electrodes include a pair which is positioned generally parallel to and on opposite sides of the substrate support face. 34. Apparatus as in claim 33, in which at least one electrode of said pair of second electrodes is capacitively coupled to rf power. 35. Apparatus as defined in claim 34, wherein the other electrode of the first pair of second electrodes is grounded. 36. Apparatus as defined in claim 33, wherein said pair of electrodes is rf powered, with one of said pair at a 180° phase delay relative to the other electtode of said pair. 37. Apparatus as defined in claim 28, wherein said first electrodes include a pair of electrodes disposed in surrounding relationship to the chamber environment. 38. Apparatus as in claim 37, in which one electrode of said pair of first electrodes is capacitively coupled to rf power. 39. Apparatus as defined in claim 37, wherein a plurality of said first electtode pairs are provided in symmettical disposition, with each pair of electtodes being in opposing relationship. 40. Apparatus as defined in claim 39, wherein one of each of said first electtode additional pairs is rf powered, with 180° phase delay relative to the opposite electrode of the pair. 41. Apparatus as defined in claim 29, wherein said magnetic field support device comprises a magnetic field coil positioned about the chamber. 42. Apparatus as defined in claim 29, wherein the magnetic field has a sttength of about one hundred gauss or less. 43. Apparatus as defined in claim 42, wherein the rf frequencies and magnetic field are related to each other for operation at or near an electron cyclotron resonance condition. 44. Apparatus as defined in claim 30, wherein the plasma is confined to a radially symmetrical region, and in which said first electrodes comprise a plurality of electrodes arranged radially symmetrically about the chamber wall. 45. Apparatus as defined in claim 29, in which said first electtodes direct the first rf electric field generally parallel to the wafer support face. 46. Apparatus as defined in claim 29, in which said magnetic field device directs the magnetic field generally perpendicular to the first rf electric field. 47. Apparatus as in claim 29, in which said electtodes direct the second rf electtic field generally perpendicular to the first rf electric field.

Inventors: HANAWA HIROJI, SMYTH KENNETH, YIN GERALD ZHEYAO, HANAWA, HIROJI, SMYTH, KENNETH, YIN, GERALD, ZHEYAO
Applicants: APPLIED MATERIALS INC, APPLIED MATERIALS, INC.
Application year: 1995
Main classification: C23C16
IPC codes: C23C16, C23F4, H01J37, H01L21, H05H1