Photoelectric conversion apparatus

Abstract: There is provided a photoelectric conversion apparatus capable of obtaining a high S/N ratio and subtracting an unnecessary component of the pixel output without using a memory. For this purpose, in a photoelectric conversion apparatus including photoelectric conversion pixel (1) for converting light into an electrical signal and outputting the electrical signal onto signal output lines (5, 6), the input section of an amplifier is capacitively coupled to the signal output line (5) of the photoelectric conversion pixel (1), and the output section of the amplifier is connected to the signal output line through a switch. The amplifier is constituted by an emitter follower, a source follower, or an operational amplifier.

Description: BACKGROUND OF THE INVENTION Field of the Invention The present invention relates to a photoelectric conversion apparatus formed on a semiconductor. Related Background Art Several types of photoelectric conversion apparatuses whose photoelectric conversion pixels have output lines are known. These photoelectric conversion apparatuses are classified into MOS, SIT, FET, CMD, and bipolar photoelectric conversion apparatuses in accordance with different pixel arrangements. Fig. 1 shows a two-dimensional bipolar photoelectric conversion apparatus in which each pixel is formed of a bipolar transistor to accumulate photocarriers in the base region. Referring to Fig. 1, each photoelectric conversion pixel 1 is composed of an npn bipolar transistor 2, a p-type MOS transistor 3 connected to the base of the npn bipolar transistor 2 to reset the base, and a pixel capacitance 4 for controlling the potential of the base. A pixel accumulation signal output line 5 is connected to the emitter of the corresponding bipolar transistor 2. A MOS transistor 6 resets the corresponding output line 5. A transfer capacitance 7 holds and transfers an output voltage of the corresponding photoelectric conversion pixel 1. A MOS switching transistor 8 connects or disconnects the corresponding output line 5 and the corresponding capacitance 7. A signal from the transfer capacitance 7 is transferred to a horizontal output line 9. A MOS switching transistor 10 connects or disconnects the corresponding capacitance 7 and the horizontal output line in accordance with an output from a horizontal shift register 33. A preamplifier 11 amplifies a signal appearing on the horizontal output line 9. The preamplifier 11 has an output terminal 12. A MOS transistor 13 resets the horizontal output line 9. A drive line 14 drives the corresponding pixels. A MOS switching transistor 16 is selected in accordance with an output from a vertical shift register 34 and connects or disconnects the corresponding drive line 14 and a drive pulse input line 15 which is a vertical line. The photoelectric conversion apparatus has a power supply terminal 17 at a reference potential V VC . An input terminal 18 applies a pulse VC to the gates of the MOS transistors 6. An input terminal 19 applies a pulse T to the gates of the MOS transistors 8. An input terminal 20 applies a pulse HC to the gate of the MOS transistor 13. An input terminal 21 receives a drive pulse R. Referring to Fig. 1, for the descriptive convenience, an area sensor having 2 × 2 photoelectric conversion pixels is illustrated. Outputs from the vertical shift register are represented by V1 and V2, and outputs from the horizontal shift register are represented by H1 and H2. In practice, 256 × 256 or more pixels are often arranged in the photoelectric conversion apparatus. Fig. 2 is a pulse timing chart for explaining the operation of the two-dimensional photoelectric conversion apparatus shown in Fig. 1. Each pulse in Fig. 2 is represented by high level or low level. However, the drive pulse R has the reference potential V VC as an intermediate level. When the output V1 from the vertical shift register 34 goes high, and the drive pulse R from the input terminal 21 goes high, the first row of the two-dimensional photoelectric conversion pixels is driven. In the photoelectric conversion pixel 1, the p-type MOS transistor (to be referred to as a PMOS hereinafter) 3 is kept off, while the base potential of the bipolar transistor 2 rises through the pixel capacitance 4. An emitter current flows, and a signal voltage accumulated in the base of the pixel appears on the corresponding output line 5, which is floating because the pulse VC is kept low. Both the outputs H1 and H2 from the horizontal shift register 33 are kept low, and the pulse T is kept high. In this state, an output signal on the floating signal output line 5 is stored in the capacitance 7. Subsequently, the outputs H1 and H2 from the horizontal shift register 33 go high to output the signal in the capacitance 7 from the output terminal 12 through the output line 9 and the preamplifier 11. Note that after the output H1 goes high and the corresponding transfer capacitance 7 is read out, the output H1 goes low, and the pulse HC goes high. The signal line 9 is reset. The column of the output H2 is then read out, so the column signals are read out sequentially via the signal line 9. In the pixels of each row, when the vertical shift register output V1 is kept high, and the drive pulse R goes low, the PMOSs 3 are turned on to set the base potential of the bipolar transistors 2 to the reference potential V VC . Then the pulse VC goes high, and the MOS transistors 6 are turned on to set and fix the signal output lines 5 to the reference potential V VC , and the drive pulse R goes high. In this state, the PMOSs 3 are turned off, and the bipolar transistors 2 of the first row are turned on to cause the emitter and base currents to flow. The base potential of the bipolar transistors 2 gradually drops to about V VC + 0.6 V within several micro seconds, thereby resetting the pixel capacitances 4. In this case, when the drive pulse R returns to the intermediate level V VC , the base potential is lowered through the pixel capacitances 4, and these transistors are reverse-biased with respect to the emitter potential V VC . When the output V1 goes low, driving of this row is completed. The pixels of the first row start an accumulation operation for accumulating the optically generated charge carriers in the base regions until the first row is selected again. When the output V2 goes high to select and drive the second row, the corresponding photo-carrier signals are output. The operation for resetting the pixels is the same as in the first row. In the bipolar photoelectric conversion apparatus described above, the signal voltage accumulated in each pixel capacitance 4 is stored in the corresponding transfer capacitance 7. When the transfer capacitance 7 is much larger than the pixel capacitance 4, the signal charge is amplified by the ratio of the two capacitances. Therefore, the influences of noise from the signal output path, the output line 5, the transfer capacitance 7, the output line 9, and the preamplifier 11 can be reduced. However, when the signal is transferred from the transfer capacitance 7 to the horizontal output line 9 in Fig. 1, the signal is capacitively divided by the stray capacitance of the horizontal output line 9, thereby lowering the signal potential. Even in a dark state, a dark output varies depending on the variations in characteristics of each pixel, and the S/N ratio is undesirably lowered. In particular, when the bipolar transistor is used for the light-receiving pixel as in the known example shown in Fig. 1, the transfer capacitance 7 often has a large value. When the emitter current flows to charge the transfer capacitance 7 in reading out the signal from the pixel, the signal charge in the pixel base is attenuated. An increase in the amount of attenuation causes an increase in noise, thereby reducing the S/N ratio. In addition, a type of known photoelectric conversion pixel has a simple photoelectric conversion function of reset → accumulation → read-out. Signal processing of the pixel output must be performed in an area other than the photoelectric conversion pixel. This type of photoelectric conversion pixel may require a field memory to process signals. An example of a solid-state image pickup device of another type is shown in Figs. 8 to 11. Fig. 8 is a diagram showing the overall circuit arrangement. Referring to Fig. 8, pixels 121-11 to 121-mn are formed on a single substrate in the matrix form. Each pixel comprises an n-channel normally on (depletion) SIT (Static Induction Transistor) 122 serving as an image pickup element, a gate capacitor 124 connected to a floating gate 123 of the SIT 122, a p-channel enhancement control transistor 125 having a source-drain path connected to the floating gate 123 (each pixel is represented by a broken line). A video voltage V D is applied to the drain (substrate) of the SIT constituting each pixel. Row lines 126-1,..., 126-m are connected to the gate capacitors of the SITs of the pixels 121-11 to 121-1n,..., 121-m1 to 121-mn of the rows arranged in the X direction, and row selection signals  G1 ,...,  Gm are applied from a vertical scanning circuit (vertical shift register) 127 to the row lines 126-1,..., 126-m, respectively. Column lines 128-1,..., 128-n are connected to the sources of the SITs of pixels 121-11 to 121-m1,..., 121-1n to 121-mn of the columns arranged in the Y direction, respectively. These column lines are grounded through column selection transistors 129-1,.., 129-n, a common video line 130, and a load resistor 131, and column selection signals  S1 ,...,  Sn are applied from a horizontal scanning circuit (horizontal shift register) 132 to the gates of the column selection transistors 129-1,..., 129-n, respectively. A control gate line 133 and an overflow drain line 134 are respectively connected to the gate and drain of the control transistor 125 constituting each pixel, and a control gate signal  C and a control drain voltage V C are applied to the control gate line 133 and the overflow drain line 134, respectively. Fig. 9 is a plan view showing the arrangement constituted by four adjacent pixels. Fig. 10 is a sectional view of this arrangement along the line 10 - 10 of Fig. 9. In this arrangement, to increase the area efficiency of the pixels formed on a substrate 140, four adjacent pixels are formed symmetrically in the vertical and horizontal directions. The substrate 140 constitutes the drain of each SIT and consists of an n + - or n-type semiconductor. An n - -type epitaxial layer 141 is grown on the substrate 140, and a separation region 142 consisting of a buried insulator or the like is formed in the epitaxial layer 141 to electrically and optically separate the adjacent pixels from each other. In each pixel, the gate and source of the SIT are constituted by a p + -type diffusion layer 143 and an n + -type diffusion layer 144 formed on the surface of the epitaxial layer 141, respectively. The n + -type diffusion layer 144 is connected to the corresponding column lines 128-i and 128-(i+1) through a wiring layer 145 consisting of, e.g., polysilicon. Row line electrodes 146-i and 146-(i+1) consisting of, e.g., polysilicon and forming the row lines 126-i and 126-(i+1) are formed on the p + -type diffusion layer 143 through a gate oxide film, so that the row line electrode forms a gate capacitor at a portion opposing the p + -type diffusion layer 143. The p + -type diffusion layer 143 of the respective pixels is formed to extend to the central portion of the four adjacent pixels. The extension of layer 143 serves as the source of the control transistor 125 of each pixel. A p + -type diffusion layer 147 constituting the drains of the control transistors of the four pixels is formed on the epitaxial layer 141 at the central portion of the four pixels so as to be spaced apart from the p + -type diffusion layer 143 constituting the gate of the SIT and the source of the control transistor of each pixel. The p + -type diffusion layer 147 is connected to the overflow drain line 134 through a wiring electrode 148. A control gate electrode 149 of the control transistors of the four pixels which forms the control gate line 133 through the gate oxide film is commonly formed on the surface of the epitaxial layer 141 between the p + -type diffusion layers 147 and 143. An operation of the above arrangement will be described with reference to the timing chart shown in Fig. 11. In this arrangement, as described above, the row lines 126-1 to 126-m are sequentially selected. After each row line is selected, the column lines 128-1 to 128-n are sequentially selected. In accordance with this X-Y addressing scheme, pixel signals are sequentially read out. When a signal read-out period t H for each row line is completed, all the pixels of the selected row line are simultaneously reset during a horizontal blanking period t BL before selecting the next row line. In particular, the pixel 121-22 is taken as an example, and its operation will be described with reference to a change in its floating gate potential V G (2,2) in Fig. 11. In the potential V G (2,2) of the floating gate 123 of the pixel 121-22 in Fig. 11, a solid line represents the potential if light is incident during an image pickup operation, while a broken line represents the potential if light is not incident during the image pickup operation. At a time t 1 , when the row selection signal  G2 applied to the row line 126-2 has a voltage V G , the potential of the floating gate of each SIT connected to this row line is increased by almost V G . More specifically, the potential is increased by {C G /(C J + C G )}·V G where C G is the capacitance of the gate capacitor 124, and C J is the parasitic diffusion capacitance of the p + -type diffusion layer 143. At a time t 2 , when the column selection signal  s2 goes high, and the column line 128-2 (and therefore the pixel 121-22) is selected, a signal current depending on the potential V G (2,2) of the floating gate 123 of the pixel 121-22 flows through the load resistor 131 via the column line 128-2, the column selection transistor 129-2, and the video line 130, and the voltage drop across the load resistor 131 is read out as an output signal V OUT . In this signal read-out, the optical charge accumulated in the floating gate 123 is generally held, and this read-out is nondestructive read-out. The selection of the last line 128-n is completed. At a time t 3 when the signal read-out of all the pixels 121-21 to 121-2n connected to the row line 126-2 is completed, i.e., at the start of the horizontal blanking period t BL , the voltage of the control gate signal  C applied to the control gate line 133 is set to -V C for turning on the control transistor 125. At this time, the surface potential  S (0) under the control gate electrode 149 changes to  S (-V C ), and the gate potential V G (2,2) is forcibly clamped to the potential  S (-V C ), thereby resetting the gate potential. The optical charge Q P accumulated in the gate during the preceding light exposure period flows away. The voltage -V C of the control gate signal  C is set such that the surface potential  S (-V C ) under the control gate electrode 149 upon application of the control gate signal  C is almost equal to a pinch-off voltage V GO of the SIT, and condition  S (-V C ) > V C is established for the control drain voltage V C . At a time t 4 , i.e., at the end of the horizontal blanking period t BL , the row selection signal  C2 goes low, and the control gate signal  C is set zero. With this operation, the gate potential V G (2,2) is decreased to V G (2,2) =  S (-V C ) - V G . The optical charge is integrated depending on the incident light amount during the image pickup period until the next read-out. For example, the gate potential is increased by, e.g., Q P /C G ( = ΔV GP ). In this arrangement, the control gate signal  c is applied not only to the electrodes of the control gate lines 133 of the pixels connected to the selected row line, but also to the electrodes of all the control gate lines 133 of the pixels which are set in a nonselected state. When the gate signal  C has the voltage -V C , the surface potential under the electrode of the control gate line 133 of each nonselected pixel becomes almost equal to  S (-V C ), i.e., the pinch-off voltage V GO as in the selected pixels. For this reason, if the optical charge accumulation amounts in some nonselected pixels are large, and the increase ΔV GP of the gate electrodes becomes  S (-V C ) - V G + ΔV GP >  S (-V C ) that is, ΔV GP > V G , the excess of the optical charge over the amount corresponding to the potential  S (-V C ), i.e., the gate potential which exceeds the pinch-off voltage V GO of the SIT is swept to the overflow drain line 134 through the channel below the control gate electrode. This overflow operation of the excessive charge is performed for all the nonselected pixels every time the row line is changed. Even if strong incident light is present, the potential of the floating gate does not exceed the pinch-off voltage V GO (i.e. ΔV GP does not exceed V G ). For this reason, a partial read-out of a signal from a non-selected pixel can be effectively prevented, and this can be regarded as equivalent to blooming control. Each pixel is reset by causing the control gate signal  C to clamp the potential of the floating gate of the SIT to  S (-V C ). The residual optical charge in the resetting operation can be perfectly zero. Therefore, in forward-biasing and resetting a p-n junction between the gate and source of the SIT, various after image phenomena can be perfectly controlled in this arrangement. The example described above poses a problem of large fixed pattern noise (to be referred to as FPN hereinafter) as one of the drawbacks of an amplification solid-state image pickup element. In an application of this element to a light amount detector, a target object must be distinguished from external light and detected with high precision. A so-called external light removal function is required. A known example shown in Fig. 12 is available to solve the above problem. The arrangement and operation of the lower half of Fig. 12 are identical to those in Figs. 8 to 11. In the upper half of Fig. 12, a drive signal is supplied from a vertical scanning circuit 152 to horizontal drive lines 150-1 and 150-2 to activate the optical signals from memory cells 153-11 to 153-22 for each horizontal drive line. Each pixel signal read out onto the vertical output line is output to the horizontal output line upon reception of timing pulses  s1 and  s2 for each vertical output line from a horizontal scanning circuit 132. At this time, the read-out of each memory cell and the read-out of each pixel of the lower half of Fig. 12 are simultaneously performed. Signals are simultaneously read out from the pixels 121-22 of the lower half and the pixel 153-22 of the upper half onto a vertical output line 128-2. When incident light components having the same light amount are supplied to the pixels, a double optical carrier component appears at an output V out . In this case, two identical cell arrays, and two vertical scanning circuits are required. However, the optical sensitivity can be improved, and the FPN can be reduced. In this known example, although the above problem can be solved and the FPN can be reduced, memory elements having the same number as that of pixels are required. For this reason, for an image pickup element for a high resolution, a chip size undesirably becomes very large. EP-A-0653881 (published on 17 May 1995, after the earliest priority date of the present application but before its filing date) discloses a solid state image pickup device having an array of bipolar transistors which act as optical sensors, and a similar array of bipolar transistors which act as memory pixels. A column output line from the array of optical sensor transistors is connected through a clamp capacitor arrangement to the input of an emitter follower. The output of the emitter follower is connected through a MOS switch to the corresponding vertical output line in the array of bipolar transistor memory pixels. The vertical output line in the array of optical sensor transistors is also connected directly through a further MOS switch to the vertical output line in the array of memory pixel transistors, bypassing the clamp capacitor and the emitter follower. In an operation to detect light from an LED, the optical sensor transistors are reset and then an optical signal is accumulated in them while the LED is off, and then this optical signal is read out onto the vertical output line and is provided through the clamp capacitor to the emitter follower. The output of the emitter follower is stored in the corresponding memory pixel transistor. This signal is regarded as a background noise signal, since it is obtained when the LED is off. Next, the optical sensor transistors are reset and accumulate a signal with the LED on. Before this signal is read from an optical sensor transistor, the background noise signal from the corresponding memory transistor is read and is connected from the vertical output line in the memory array to the vertical output line in the optical sensor array through the MOS switch which bypasses the emitter follower. In this way, the background noise signal is once again input to the emitter follower through the clamp capacitor. The clamp circuit is operated so that the clamp capacitor stores the inverse of the background noise signal, and then the signal is read from the optical sensor transistor. Consequently, the emitter follower receives through the clamp capacitor the difference between the signal which is now read from the optical sensor transistor and the background noise signal, so that the background noise component is removed from the signal read from the optical sensor transistor and the output of the emitter follower corresponds to the signal provided by the LED. This signal is read out through the vertical output line of the memory transistor array. SUMMARY OF THE INVENTION According to the present invention there is provided photoelectric conversion apparatus as set out in claim 1 and a method of driving photoelectric conversion apparatus as set out in claim 21. Optional features are set out in the remaining claims. An embodiment of the present invention provides a photoelectric conversion apparatus capable of obtaining an output at a high S/N ratio. An output line of a pixel is capacitively coupled to an input section of an emitter follower amplifier, and an output section of the emitter follower is connected to the pixel output line through switching means. In this arrangement, a change in output potential of the emitter follower can be positively fed back to the input section of the emitter follower itself, thereby amplifying the pixel output. An embodiment of the present invention provides a photoelectric conversion apparatus capable of subtracting an unnecessary component of a pixel output without using a memory. After the feedback operation using the emitter follower amplifier, a pixel is reset using the output potential. In an embodiment, there is provided a photoelectric conversion apparatus including a photoelectric conversion pixel for accumulating carriers generated by an optical signal in a base or a control electrode of a transistor and outputting an output corresponding to the optical signal from an emitter or a main electrode of the transistor, comprising emitter or source follower amplifier means connected to an output line of each pixel of the photoelectric conversion pixel, connection means for connecting an output from the amplifier means to the output line of the pixel, and means for resetting a control electrode of a pixel transistor with respect to the output from the amplifier means. With this operation, external component removal, as practised in photometry, can be performed without using a memory. In an embodiment of the present invention, there is provided a solid-state image pickup apparatus comprising a plurality of photoelectric conversion elements, processing means connected to output terminals of the plurality of photoelectric conversion elements, switching means for connecting an output from the processing means to the output terminals of the photoelectric conversion elements, and means for resetting the photoelectric conversion elements with an output voltage from the processing means. In the above solid-state image pickup apparatus, the photoelectric conversion element may accumulate carriers upon reception of an optical energy on the control electrode of the transistor and output a signal based on the carriers accumulated from the main electrode region. In the above solid-state image pickup apparatus, the switching means may be a MOS transistor. In an embodiment of the present invention, there is further provided a solid-state image pickup apparatus comprising a plurality of photoelectric conversion elements, a clamp capacitance and switching means which are connected to a column output line of each of the photoelectric conversion elements, resetting means for resetting the photoelectric conversion elements, the resetting means connecting an output terminal of the clamp capacitance to an output terminal of the switching means, and transfer means for transferring an output from the switching means to an output line. In the above solid-state image pickup apparatus, the transfer means may comprise a transfer capacitance for storing a charge from the photoelectric conversion element through the switching means, and transfer switching means for time-serially transferring the charge of the transfer capacitance onto the output line in accordance with a timing signal from a horizontal scanning circuit. In the above solid-state image pickup apparatus, the photoelectric conversion element may be a bipolar or static induction photoelectric conversion element. Various optional objects, features, and advantages of the present invention will be apparent from the following detailed description of the preferred embodiments in conjunction with the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is an equivalent circuit diagram of a known photoelectric conversion apparatus; Fig. 2 is a timing chart for explaining the operation of the known photoelectric conversion apparatus; Fig. 3 is an equivalent circuit diagram of a photoelectric conversion apparatus according to the first embodiment of the present invention; Fig. 4 is a timing chart for explaining the operation according to the first embodiment of the present invention; Fig. 5 is a timing chart for explaining the further operation according to the first embodiment of the present invention; Fig. 6 is an equivalent circuit diagram of a photoelectric conversion apparatus according to the second embodiment of the present invention; Fig. 7 is an equivalent circuit diagram showing a photoelectric conversion apparatus according to the third embodiment of the present invention; Fig. 8 is a schematic equivalent circuit diagram of a known solid-state image pickup apparatus; Fig. 9 is a plan view showing a portion around the pixels in the known solid-state image pickup apparatus in Fig. 8; Fig. 10 is a schematic sectional view of the solid-state image pickup apparatus in Fig. 8; Fig. 11 is a timing chart for explaining the operation of the known solid-state image pickup apparatus in Fig. 8; Fig. 12 is a schematic equivalent circuit diagram of another known solid-state image pickup apparatus; Fig. 13 is a schematic equivalent circuit diagram of the fourth embodiment according to the present invention; Fig. 14 is a timing chart for explaining the operation of the fourth embodiment in Fig. 13; Fig. 15 is a schematic equivalent circuit diagram of the fifth embodiment according to the present invention; Fig. 16 is a schematic equivalent circuit diagram of the sixth embodiment according to the present invention; Fig. 17 is a schematic equivalent circuit diagram of the seventh embodiment according to the present invention; Fig. 18 is a schematic equivalent circuit diagram of the eighth embodiment according to the present invention; Fig. 19 is a schematic equivalent circuit diagram of the ninth embodiment of the present invention; Fig. 20 is a timing chart for explaining the operation of the ninth embodiment of the present invention; and Fig. 21 is an equivalent circuit diagram of the tenth embodimet according to the present invention. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Fig. 3 is an equivalent circuit diagram of a two-dimensional photoelectric conversion apparatus having 2 × 2 pixels. The same reference numerals as in Fig. 1 denote the same elements and functions in Fig. 3, and a detailed description thereof will be omitted. Referring to Fig. 3, the two-dimensional photoelectric conversion apparatus includes a Darlington bipolar transistor 22 for an amplifier and a constant current source MOS transistor 23. The Darlington bipolar transistor 22 and the MOS transistor 23 constitute each emitter follower 35. The gate of the MOS transistor 23 in Fig. 3 has a reference intermediate potential V VC . A coupling capacitance 24 capacitively couples the input base section of the emitter follower 35 and an output line 5. The Darlington bipolar transistor 22 has a base capacitance 25. A p-type MOS transistor 26 controls the base potential of the Darlington bipolar transistor 22. A MOS transistor 27 serves as a switch to connect or disconnect the corresponding output section of the emitter follower and the corresponding output line 5. A terminal 28 applies a gate pulse BR to the gates of the MOS transistors 26. A terminal 29 applies a pulse FB to the gates of the MOS transistors 27 for providing negative feedback. A power supply terminal 30 supplies a potential V BR . Fig. 4 is a pulse timing chart for explaining the operation of the two-dimensional photoelectric conversion'apparatus according to the first embodiment shown in Fig. 3. The elements of each row accumulate optical carriers and are sequentially selected in the same manner as in Fig. 1. Fig. 4 is a timing chart of driving one row. When the drive pulse R goes high from the intermediate level V VC , and an output V1 from a vertical shift register 34 is set high, outputs from the pixels of the selected row are read out onto the output lines 5, which are floating. At this time, as the pulse BR at the terminal 28 is set low, the PMOS transistors 26 are turned on, the bases of the Darlington bipolar transistors 22 are set at V BR , and outputs from the emitter followers 35 each constituted by the Darlington bipolar transistor 22 and the MOS transistor 23 are set at about a voltage value (V BR - 1.2 V). For the descriptive convenience, the output from the emitter follower 35 is given as the reference potential V VC . Assume that when the drive pulse R returns to the intermediate level, and the pixel read-out is completed, a voltage at the output line 5 is given as V VC + V 1 , that the pulse BR then goes high to set the base of each Darlington bipolar transistor 22 in a floating state, and that the pulse FB at the terminal 29 goes high to electrically connect the output section of each emitter follower 35 to the corresponding output line 5. The potential of the output line 5 changes from V VC + V 1 to V VC + V 2 . The value of the voltage V 2 is defined as follows. When the values of the coupling capacitance 24 and the parasitic capacitance 25 are defined as C0 and C1, the voltage output by the emitter follower 35 changes from V VC by [C0/(C0 + C1)]·(V 2 - V 1 ) because the output value of the emitter follower 35 receives the potential change of the output line 5 through coupling of the coupling capacitance 24. Since the changed value is V VC + V 2 , so that V VC + [C0/(C0 + C1)]·(V 2 - V 1 ) = V VC + V 2 therefore V 2 = -(C0/C1)·V 1 With the above operation, the emitter follower 35 outputs a signal obtained by multiplying the voltage V 1 by the gain -(C0/C1). The voltage V 1 is a pixel output potential. This output from the emitter follower 35 is stored in an a transfer capacitance 7 through a transistor 8 during high level of the pulse T at a terminal 19. While the outputs H1 and H2 from a horizontal shift register 33 are made high in turn, MOS transistors 10 are turned on to sequentially transfer the stored charges to an amplifier 11. When the parasitic capacitance of a horizontal output line 9 and the value of the transfer capacitance 7 are defined as CH and CT, respectively, a capacitance division at a ratio CT/(CH + CT) is imposed in data transfer to the preamplifier 11 as in the conventional case. However, for example, if the C0/C1 value is set to (CH + CT)/CT, a decrease in signal which is caused by the capacitive division can be compensated. The capacitance CT of the transfer capacitance 7 is normally set to several pico farads, but C0 can be set to about several hundreds of femto farads. For this reason, for each pixel, a charge amount flowing in the read-out can be smaller than that in the conventional case. The degree of attenuation of the pixel signal can be reduced, so that the S/N ratio at the pixel output timing can be increased. Fig. 5 is a drive timing chart for explaining the sequential resetting, external light noise accumulation, storage of external light noise N in a pixel, accumulation of both LED light and external light noise in a pixel, and read-out of pixel photo-induced carrier signal in Fig.3. When the two-dimensional photoelectric conversion apparatus is used as a photometric image sensor, both a specific necessary optical signal and an unnecessary signal such as external light may exist. For example, the light amount or spectrum of LED light is measured under the condition that external light is incident. To remove an external light component in a known case, a light component alone is received and read out, and the read-out output from each pixel is written in a memory. Light in which external light is mixed with LED light is received and read out, and a difference between the resultant light component and the external light component already written in the memory is calculated. A method of removing an external light component without using a memory will be described with reference to Fig. 5. Referring to Fig. 5, when the drive pulse R is set at low level, the base potential of each pixel transistor 2 of the first row selected by an output V1 from a vertical shift register 34 is set at V VC as in Fig.1. The base potential is reset when the drive pulse R is set high. This operation is repeated for the second and subsequent rows. Carriers generated only by external light are accumulated in the base of each pixel transistor 2. The next operation is a characteristic feature of the this embodiment of the present invention. That is, in selection of the first row, in the same manner as in the read-out operation described with reference to Fig. 4, an external light component output potential V N is read out while the pulse BR is temporarily set at low level. Then the pulse FB is temporarily set at high level, thereby outputting, to the corresponding output line 5, an output of the emitter follower 35 which is obtained by multiplying the external light accumulation potential V N with -C0/C1. If C0 is almost equal to C1, the potential of the output line 5 is set to about (V VC - V N ). This output is a low-impedance output obtained by the emitter follower 35. The corresponding pixel is then reset with respect to this potential by briefly setting the drive pulse R high, and the pixel base potential is determined by a potential defined by -V N . Accumulation of light, containing LED light to be measured, is started. The pixel base potential is increased by the sum of a voltage component V N corresponding to the external light and a voltage component V L corresponding to the LED light. The voltage component V N cancels the pixel reset potential -V N set prior to the accumulation. In the next read-out operation, the output from the pixel becomes the voltage component V L corresponding to the LED light, without including the light component V N . The read-out and transfer operations of the voltage component V L corresponding to this LED light are performed as described above with reference to Fig.4. In the operation of the this embodiment, since both the external noise component V N and the fixed Pattern variation component of each pixel output can be removed, a signal having a high S/N ratio can be obtained. The second embodiment will be described next. Fig. 6 is an equivalent circuit diagram showing the arrangement of the second embodiment of the present invention. The same reference numerals as in Fig. 3 denote the same parts in Fig. 6, and a detailed description thereof will be omitted. Referring to Fig. 6, each source follower 36 comprises a MOS transistor or junction field-effect transistor 31 and a constant current source constituted by a transistor 23. In the embodiment shown in Fig. 6, the Darlington emitter follower 35 in Fig. 3 is replaced with the source follower 36, and the drive operation is the same as in Fig.s 3 to 5. In the this embodiment, as compared with the Darlington emitter follower 35, the input impedance of the source follower 36 is high, and the temperature drift of each transistor element is small. In addition, the number of manufacturing steps can be reduced in IC formation. This embodiment is more suitable for the noise elimination operation of Fig. 5 than for amplifying the output as described with reference to Fig.4, because the amplifying operation requires a constant ratio of the coupling capacitance 24 of the signal line 5 to the parasitic capacitance 25, whereas the parasitic capacitance 25 is highly variable. The third embodiment will be described below. Fig. 7 is an equivalent circuit diagram of the third embodiment of the present invention. The same reference numerals as in Fig. 3 or 6 denote the same parts in Fig. 7, and a detailed description thereof will be omitted. Referring to Fig. 7, the circuit includes operational amplifiers 32. In this embodiment, the Darlington emitter follower 35 in Fig. 3 is replaced with a voltage follower 37, and the drive operation of the this embodiment is the same as that of the previous embodiments. An input voltage to the voltage follower 37 is almost equal to its output voltage, so that a photo-induced carrier accumulation potential, corresponding to an amount of light, can be directly transferred to a corresponding storage capacitance 7 without reducing this carrier accumulation potential. In each of the first to third embodiments described above, the photoelectric conversion pixel is of an amplification type using a bipolar transistor. However, the photoelectric conversion pixel need not be limited to this type. For example, even in a MOS pixel or an amplification pixel using a SIT, JFET, or MOS transistor, each output line voltage can be amplified in the same manner as described above, provided that the output line 5 is set in a floating state upon outputting the pixel signal. If the pixel reset level can be defined by an output line potential, an external light component and the like can be removed without using any memory. The embodiment shown in Fig. 6 can facilitate the manufacture of a photoelectric conversion apparatus with a pixel using a MOS transistor or a JFET, as compared with other embodiments. In addition, each embodiment described above has exemplified photoelectric conversion elements of 2 rows × 2 columns. However, the present invention can be applied to an image sensor and a line sensor. The speed of the scanning circuits and the accumulation switching speed of the pixels in the embodiments must take account of the time required for accumulating and writing the external component signal. In addition to the external light component removal, the embodiments can be used for detection of the difference between two light amounts of light for calibration or photometry, and the removal of internal noise and the effects of pixel-to-pixel variations in the photoelectric conversion apparatus. As described above, since the load capacitance charged in outputting data from the photoelectric conversion pixel can be reduced, an S/N ratio can be increased, and a gain can be set high. Therefore, the magnitude of a signal to be transferred to the final preamplifier can be set high prior to the transfer, and a decrease in signal which is caused by the capacitive division involved in this transfer can be compensated for. According to the second embodiments, an output obtained by multiplying each pixel output with a gain (-1) is output to each output line to reset the corresponding pixel with respect to the output line potential, so that an inverted component of the pixel output can be written into the pixel. Therefore, an external component can be removed as in photometry without using a field memory used in the known method. In addition, the variation components of the pixels can be removed in the removal of the external light, thereby providing a high-performance photoelectric conversion apparatus having a high S/N ratio. Fig. 13 is a schematic circuit diagram of the fourth embodiment of the present invention. This embodiment uses three bipolar photoelectric conversion elements as photoelectric conversion elements arranged in a one-dimensional array. The operation of this embodiment will be briefly described with reference to a timing chart in Fig. 14. At time t 0 , when a pulse of low level is applied to a terminal 1100, a PMOS transistor MPR is turned on, and at the same time an NMOS transistor MNR1 is turned off, and a voltage (to be referred to as VRES) lower by VBE from a voltage obtained by dividing a power supply voltage across resistors R1 and R2 appears at the emitter terminal of an npn transistor QR. At this time, a terminal 1103 is set at low level. When the resistors R1 and R2 are designed to satisfy the following condition: VRES > VTH of PMOS transistors MP11 to MP14 (where VTH is the threshold voltage of each PMOS transistor), the PMOS transistors MP11 to MP14 are turned on to set the base region of each photoelectric conversion element QS1 to QS3 to the emitter voltage of npn transistor QR (first reset). At time t 1 , when the pulse at the terminal 1100 goes high, both the PMOS transistor MPR and the npn transistor QR are turned off, and at the same time the NMOS transistor MNR1 is turned on. The emitter terminal of the npn transistor QR is set at the GND potential, and the PMOS transistors MP11 to MP14 are turned off, thereby completing the first reset. At time t 2 , when a pulse of high level is applied to a terminal 1104, NMOS transistors MN11 to MN13 are turned on, and the emitter potential of the npn transistors QS1 to QS3 of the respective pixels is reset to a reset potential (GND in Fig. 13). At time t 3 , when a pulse of high level is applied to the terminal 1103, the PMOS transistors MP11 to MP14 are kept off, and the base potential of the npn transistors QS1 to QS3 is increased by capacitive coupling through base capacitances Cx1 to Cx3, so that the base-emitter junction is forward-biased, and the npn transistors QS1 to QS3 perform the emitter follower operations. The holes in the base region in the floating state are recombined. As a result, the base voltage is reset (second reset). Upon completion of this reset operation, at time t 4 , a pulse at the terminal 1103 falls to low level, and the base potential of each pixel is shifted down. The base-emitter voltage is thus reverse-biased to start the accumulation operation at this time. When a predetermined accumulation period has elapsed, a pulse at a terminal 1106 goes low at time t 5 , and PMOS transistors MP21 to MP23 are turned on to reset clamp capacitances Cc1 to Cc3 to a voltage applied to a terminal 1107. At time t 6 , a pulse at the terminal 1104 goes low, the NMOS transistors MN11 to MN13 are turned off, and the emitters of the npn transistors QS1 to QS3 are set in the floating state. When a pulse of high level is applied to the terminal 1103 at time t 7 , the base potential of each photoelectric conversion transistor QS1 to QS3 is shifted up through a corresponding one of the base capacitances Cx1 to Cx3, and the base-emitter junction of the npn transistors QS1 to QS3 is forward-biased. The signals photoelectrically converted by the pixels and accumulated in the base regions are read out onto output lines 111 to 113 and supplied to the clamp capacitances Cc1 to Cc3 through the NMOS transistors MN21 to MN23. When the read-out operation is completed, a pulse at the terminal 1106 is set high at time t 8 , and the PMOS transistors MP21 to MP23 are turned off to set the bases of Darlington transistors D1 to D3 in the floating state. At time t 9 , when a pulse of high level is applied to the terminal 1104, the output lines 111 to 113 are reset, and at the same time, the base and emitter potentials of the Darlington transistors D1 to D3 connected through the clamp capacitances Cc1 to Cc3 are shifted down by magnitudes corresponding to signals of the respective pixels. At time t 10 , a pulse at a terminal 1108 falls to turn off the NMOS transistors MN21 to MN23 and disconnect the clamp capacitances Cc1 to Cc3 from the output lines 111 to 113. The pulse at the terminal 1104 falls. Then the first reset is performed at time t 11 . Next, at time t 12 , a pulse of high level is applied to a terminal 1109 to turn on NMOS transistors MN31 to MN33. At time t 13 , when a pulse of high level is applied to the terminal 1103, the bases of the npn transistors QS1 to QS3 of the respective pixels are initialized in accordance with signal voltages obtained by the previous accumulation because the second reset is performed using the emitter potentials of the Darlington transistors D1 to D3 through the NMOS transistors MN31 to MN33. At this time, the higher the previous read-out signal voltage is, the lower the reset voltage becomes. Upon completion of the second reset and the second signal accumulation, the base potential of the Darlington transistors D1 to D3 is initialized from time t 16 to time t 17 . At time t 18 , a pulse at the terminal 1109 falls, a pulse of high level is applied to a terminal 1110, and NMOS transistors MN41 to MN43 are turned on. At time t 19 , when a pulse at the terminal 1103 rises, voltages corresponding to the respective pixel signals are read in capacitances CT1 to CT3. From time t 22 , when a start pulse and a scanning pulse are respectively input from terminals 1111 and 1112 to the horizontal scanning circuit, the pixel signal is time-serially read out to an output terminal 1115. Although not illustrated, an output buffer means is arranged at the output terminal 1115. As described above, according to the present embodiment, two reset/accumulation/read-out cycles are performed in one period. By setting the second sensor reset voltage on the basis of the previous read-out signal level, when the first signal accumulation cycle occurs in, e.g., the dark state, an FPN-removed signal can be obtained. In the first signal accumulation cycle, even if external light is incident on an object, its effect (the external component) can be removed. In the above description, a signal of (V 2 - V 1 ) is output if the signals obtained in the first and second accumulation cycles are defined as V 1 and V 2 . However, the signal of (V 1 + V 2 ) can also be obtained by partially changing the drive timings of the clamp circuit. According to this scheme, the signal V 1 obtained in the first accumulation cycle is read out. If a signal amount is insufficient as a result of this read-out operation, the second accumulation cycle is performed for the signal V 1 again, thereby facilitating optimization of an exposure amount (accumulation time). In the above embodiment, each pixel has been constituted by a one-dimensional array of three pixels. Even if a plurality of pixels are arranged as a line sensor, this peripheral circuit can be arranged in the same manner as described above. In particular, a clamp capacitance, its peripheral Darlington transistor, an NMOS transistor, and a PMOS transistor are arranged in units of columns. Therefore, the two reset/accumulation/read-out cycles are performed in each period to obtain a predetermined effect. Fig. 15 is a schematic circuit diagram of the fifth embodiment of the present invention. This embodiment is obtained such that photoelectric conversion elements are arranged in a two-dimensional array of three vertical pixels and three horizontal pixels. The fifth embodiment is substantially the same as the fourth embodiment except that the pixels are driven by outputs from a vertical shift register. In this embodiment, the same timing signal is used to supply a predetermined voltage to the terminal 1103 as in the fourth embodiment and the supply voltage at the terminal 1103 is switched for each row in accordance with start and timing signals from a start signal terminal 1101 and a vertical scanning timing terminal 1102 to the vertical scanning circuit, thereby reading output signals in units of horizontal drive lines. The two reset/accumulation/read-out cycles are performed in each period, and the second sensor reset voltage is set on the basis of the previous read-out signal level. The fourth embodiment can perform the so-called FPN removal in a line sensor and the fifth embodiment can remove two-dimensional pattern FPN. The present invention is not limited to an array of three rows and three columns, but can be extended to a high-density area sensor of, e.g., 640 rows × 460 columns, thereby obtaining low-noise, high-density image signal having a high S/N ratio. According to this embodiment, since the memory cells 153-11 to 153-22 and the vertical scanning circuit 152 in Fig. 12 can be omitted, the chip size can be greatly reduced. In the fourth and fifth embodiments, the Darlington-connected npn transistors are used for outputs of the clamp capacitances Cc1 to Cc3. However, an operational amplifier shown in Fig. 16 can be used instead without any problem. In the sixth embodiment, the operational amplifier is incorporated as a voltage follower, Its input impedance is high, and its effective output resistance is extremely low. For these reasons, a predetermined voltage is applied to a terminal 1107, and a timing pulse is supplied to a terminal 1106 to turn on/off each PMOS transistor, thereby accurately transferring a read-out level. Even in this embodiment, two reset/accumulation/read-out cycles are performed for each period in units of horizontal drive lines, and the second sensor reset voltage is set on the basis of the previous read-out signal level. The seventh embodiment according to the present invention is shown in Fig. 17. This embodiment is an improvement of the fifth embodiment. The transfer switches MN41 to MN43 and the signal holding (transfer) capacitances CT1 to CT3 are omitted, and a load resistor RL is connected to the horizontal output line. With this arrangement, since the capacitances and MOS switches can be omitted from the chip, the chip size can be reduced. Transfer from base capacitances Cx11 to Cx13 to clamp capacitances Cc1 to Cc3 can be performed at high speed, and high-speed scanning can be performed in outputting the charges from the clamp capacitances Cc1 to Cc3. A current flowing through the resistor RL in the signal read-out can be given: VS/RL where VS is the signal voltage. On the other hand, when the read-out time is defined as ΔT, a change amount ΔVB of the base voltage of the Darlington transistor during the read-out operation can be represented by the following equation: ΔVB = (VS/RL) × (ΔT/Cc)/HFE 2 where HFE is the current amplification factor of the npn transistor, and Cc is the capacitance of each of the clamp capacitances Cc1 to Cc3. When the load resistor RL, the signal holding (clamp) capacitance Cc, and the like are set to sufficiently reduce the value in equation (2), a stable output can be obtained. A transfer gain AT for transfer from a transfer capacitance CT to a stray capacitance CH as of the horizontal output line is given as follows in Figs. 13, 15, and 16: AT = CT/(CT + CH) Thus, according to the present embodiment, large reduction of chip size can be attained, while larger accumulation capacitance is required to obtain larger transfer gain in the earlier embodiments. Fig. 18 is a schematic equivalent circuit diagram of the eighth embodiment of the present invention. In this embodiment, SITs (Static Induction Transistors) QS11 to QS33 are used as the photoelectric conversion elements. The operation of the eighth embodiment is identical to that of the fifth embodiment. That is, in signal read-out from a SIT in the sensor, an output from a vertical scanning circuit 150 is set to an intermediate level voltage, and a clamping operation is performed. A clamp output passes through NMOS transistors MN31 to MN33 and is fed back to the source of the SIT. When the output from the vertical scanning circuit 150 is then set at high level, the SIT gate voltage VGS is defined as follows: VGS = FB + B where FB is the clamped output of the Darlington transistor, and B is the built-in potential in the gate-source path of the SIT. When the reset voltage (terminal 1107) of the clamp capacitances Cc1 to Cc3 is set to an appropriate value, signal accumulation can be newly performed from the clamp output voltage. In this embodiment, photoelectric conversion elements arranged in an array as a two-dimensional area sensor may be used, as a matter of course. Two reset/accumulation/read-out cycles are performed for each period in units of horizontal drive lines, and the second sensor reset voltage is set on the basis of the previous read-out signal level in the same manner as in the above embodiment. In this manner, the two-dimensional pattern FPN can be removed, and a low-noise, high-density image signal having a high S/N ratio can be obtained. The present invention has been described by exemplifying bipolar photoelectric conversion elements and the SIT photoelectric conversion elements. However, the same operation as described above can be performed using other photoelectric conversion elements. According to the embodiments, in a solid-state image pickup device, even if a large number of photoelectric conversion elements are integrated to assure a high resolution, solid-state pattern noise can be reduced, and the chip size can be reduced. In consideration of a detector serving as a light amount detector as an application of the photoelectric conversion element of the present embodiments, a so-called external light removal function capable of extracting a target object even in a dim state with high precision can be enhanced, and the chip size can be reduced. The ninth embodiment of the present invention is shown in Fig. 19. This embodiment exemplifies a one-dimensional photoelectric conversion apparatus consisting of two pixels for the descriptive convenience. One pixel is constituted by a photodiode and two NMOS transistors. The operation of this embodiment will be briefly described with reference to a timing chart in Fig. 20. At time t1 a pulse of high level is applied to a terminal 202, and a pulse of high level is applied to the terminal 201 at time t2. At these times, NMOS transistors MR11 and MR12 and then M321 and M322 are turned on, and photodiodes D21 and D22 of the respective pixels are reset with a voltage Vres applied to a terminal 203. Upon completion of resetting, the respective pulses go low at time t3 and time t4, and the photocarrier accumulation operation (first accumulation operation) is started. In this case, the photoelectric conversion element accumulates electrons on the gate of NMOS transistors M121 and M122, and the gate potential decreases as the incident light amount increases. When the accumulation operation is completed, and the optical signal of each pixel is to be read out, a pulse of high level is applied to a terminal 206 at time t5 to turn on NMOS transistors MR41 and MR42. At time t6, a pulse of high level is applied to a terminal 204 to turn on NMOS transistors MR21 and MR22. Inverting amplifiers are constituted between transistors M121 and M122 of the respective pixels and transistors MR21 and MR22. The optical signals stored in the photodiodes are read out onto output lines 211 and 212. At time t7, when the read-out operation of the optical signals is completed and the pulse at terminal 204 falls. A pulse at a terminal 207 falls at time t8 to turn off the NMOS transistors MR51 and MR52, so that amplifier nodes N1 and N2 of capacitances CC1 and CC2 are set in the floating state at the potential given at the terminal 208. At time t9, when a pulse of high level is applied to the terminal 202 to reset the output lines 211 and 212, the voltages at the nodes N1 and N2 are shifted down through the capacitances CC1 and CC2. In addition, at time t10 and time t11, the pulses at the terminals 206 and 202 fall to set both the terminals of the capacitances CC1 and CC2 in the floating state, and the reset MOS is turned off. At time t12, when a pulse of high level is applied to the terminal 205, the potentials at the nodes N1 and N2 are output to the output lines 211 and 212 through operational amplifiers. At time t13, when a pulse of high level is applied to the terminal 201, the respective pixels are reset to the potentials of the output lines 211 and 212. When resetting is completed at time t14, each pixel starts the second accumulation operation. When the accumulation operation is completed, the optical signal is read out again from time t17 to time t22. At this time, when a pulse of high level is applied to a terminal 209 at time t19, the signal voltages at the nodes N1 and N2 are read out to the holding capacitances C1 and C2 through NMOS transistors MR61 and MR62. A horizontal scanning circuit 220 is then operated to serially read out the signals from the C1 and C2 to a horizontal scanning line ℓh and an output terminal 213 from time t23 to time 31, thereby completing the series of operations. As described above, according to the present embodiment, the two reset/accumulation/read-out cycles are performed in one period, and the second sensor reset voltage is set on the basis of the previous read-out signal level. For example, when the first signal accumulation state is set in the dark state or the accumulation time is substantially reduced, a signal free from FPN including the dark current component of each pixel can be obtained. In an application as a detector, even if external light is to be directly incident on a light-receiving surface of each pixel, the external light component can be eliminated from the irradiation of light from a light source such as an LED onto an object in the second accumulation period, and the detection precision can be greatly improved. In this embodiment, the operational amplifiers are arranged at the nodes N1 and N2 of the clamp sections. No problem is posed when another buffer means such as a source follower or an emitter follower is used in place of an operational amplifier. The tenth embodiment of the present invention is shown in Fig. 21. This embodiment exemplifies a two-dimensional array of photosensitive conversion elements of two vertical pixels and two horizontal pixels, as compared with the ninth embodiment. The tenth embodiment is substantially the same as the ninth embodiment except that pixels are driven by outputs from a vertical shift register. In the tenth embodiment, the memory cells 153-11 to 153-22 and the vertical scanning circuit 152 in Fig. 12 can be omitted to greatly reduce the chip size. In the ninth and tenth embodiments, the pixel portion causes the gate electrode of an NMOS transistor to accumulate the photocarriers. In the read-out operation, the NMOS transistor of the photoelectric conversion element is used as an inverting amplifier. However, the same operation as described above can be realized even if another photoelectric conversion element such as a MOS, CMD, AMI, or SIT photoelectric conversion element is used. Most of the above embodiments provide photoelectric conversion apparatus comprising: a photoelectric conversion element; an amplifier means for receiving the output of the photoelectric conversion element; capacitive storage means for storing the output of the amplifier means; and switch means for coupling the capacitive storage means to an output means. Because the amplifier means is provided between the photoelectric conversion element and the capacitive storage means, the output from the photoelectric conversion element can be boosted by the amplifier means before it is stored in the capacitive storage means, thereby reducing the effect of subsequent attenuation, such as by capacitive division, of the signal when it is read from the capacitive storage means. The gain of the amplifier means can be used substantially to compensate for the attenuation which the signal suffers when it is read from the capacitive storage means owing to the division of the signal between the capacitive storage means and the input capacitance of the output means. As is illustrated in the embodiments, there can be a plurality of column lines each having a respective amplifier means and a respective capacitive storage means, and at least one photoelectric conversion element, and respective switch means connect the capacitive storage means of the respective column lines to a common output line. Each of the embodiments described above provides photoelectric conversion apparatus comprising: a photoelectric conversion element which provides a photoelectric conversion output in accordance with the level of charge stored in an accumulation region; reset means for resetting the accumulation region, and means for generating a reset potential from the photoelectric conversion output. The potential to which the accumulation region is reset by the reset means is determined on the basis of the reset potential. In this way, the accumulation region can be reset to a potential which is dependent on the level of the photoelectric conversion output which has just been provided. As explained above with reference to the embodiments, one use for such a system is for noise cancelling. The apparatus can also comprise means for supplying a fixed predetermined reset potential, and control means which controls whether the fixed predetermined reset potential or the reset potential generated from the photoelectric conversion output is used during resetting to determine the potential to which the accumulation region is reset. This enables an arrangement in which the amount of charge stored in the accumulation region after reset using the reset potential generated from the photoelectric conversion output differs from the amount of charge stored following reset using the fixed predetermined reset potential by substantially the same amount as the amount of charge stored in the accumulation region after reset using the fixed predetermined reset potential differs from the amount of charge in the accumulation region which creates the photoelectric conversion output. That is to say, if reset using the predetermined reset potential leaves the accumulation region with a charge amount A, and after accumulation the level of charge stored in the accumulation region is A + B, the output signal from the photoelectric conversion element in response to the charge level A + B is used to generate a reset potential such that after reset using the thus-generated reset potential the level of charge in the accumulation region is A - B. In the case where the reset potential is applied to the output terminal of the photoelectric conversion element, as is the case in the illustrated embodiments, the reset potential generated from the photoelectric conversion output may be a value which is lower than the predetermined fixed reset potential by the same amount as the photoelectric conversion output is higher than the predetermined fixed reset potential. It can be seen that the embodiment of Figure 3 provides a photoelectric conversion apparatus comprising: a photoelectric conversion element; a signal line for receiving an output signal from the photoelectric conversion element, an amplifier means; means for capacitively coupling the signal line to the input of the amplifier means; and means for coupling the output of the amplifier means to the signal line. This provides a useful amplifier construction in co-operation with a photoelectric conversion element. As is clear from the illustrated embodiments, the signal line together with the means for coupling it to the input of the amplifier and the means for coupling it to the output of the amplifier provide a feedback control arrangement, and the combination of the amplifier means together with the feedback control arrangement provides a construction which is itself usable as an amplifier means. As is described for example with reference to Figures 3, 4 and 5, the overall gain of the combination of the amplifier means and the feedback control arrangement can be adjusted by suitable selection of capacitor values. Accordingly, a simple and versatile arrangement is provided. Preferably, means is provided for applying a fixed potential to the amplifier input while the output signal from the photoelectric conversion element is applied to the signal line, and the input to the amplifier means is allowed to float while the output of the amplifier means is coupled to the signal line.

Claims: Photoelectric conversion apparatus comprising: a photoelectric conversion element comprising a transistor (2, QS, M111-M122) for outputting a photoelectric conversion output in accordance with a photoelectric conversion signal at its control region; a signal line (5) for receiving the photoelectric conversion output from the photoelectric conversion element; reset means (4) for resetting the control region of the said transistor of the photoelectric conversion element to a potential determined in accordance with a reset potential; and means (35, 26, 27, 24) for receiving an output of the photoelectric conversion element from the signal line (5), characterised in that the said means (35,26,27,24) for receiving an output of the photoelectric conversion element is means for setting the reset potential on the basis of the said output. Apparatus according to claim 1, comprising: means (17,18) to supply a predetermined reset potential (V VC ); and control means for controlling whether (i) the predetermined reset potential or (ii) the reset potential set on the basis of the photoelectric conversion element output is used as the reset potential when the reset means resets the control region of the transistor. Apparatus according to claim 2 in which the means for receiving the output of the photoelectric conversion element is arranged to set the reset potential on the basis thereof such that the level of charge stored in the control region after reset using the reset potential set on the basis of the output of the photoelectric conversion element varies from the level of charge stored in the control region after reset using the predetermined reset potential by substantially the same amount as the level of charge stored in the control region after reset using the predetermined reset potential varies from the level of charge in the control region which causes the photoelectric conversion element output from which the reset potential is generated. Apparatus according to claim 2 in which the reset potential is applied to the output terminal of the photoelectric conversion element during reset, and the means for receiving the output of the photoelectric conversion element generates the reset potential to vary from the predetermined reset potential by substantially the same amount, but in the opposite direction, as the output of the photoelectric conversion element varies from the predetermined reset potential. Apparatus according to any one of claims 1 to 4 comprising switching means (27) for connecting the signal line (5) to the output of the means (35) for receiving the output of the photoelectric conversion element. Apparatus according to claim 5, wherein said switching means comprises a MOS transistor. Apparatus according to claim 5 or claim 6 in which the means for receiving the output of the photoelectric conversion element comprises an amplifier (35). Apparatus according to claim 7 in which the input of the amplifier is capacitively coupled to the signal line (5). An apparatus according to claim 8 in which a switch (26) is connected to the input of the amplifier for resetting an input potential thereof. Apparatus according to any one of claims 7 to 9 in which the amplifier is one of an emitter follower, a source follower, and an operational amplifier. Apparatus according to claim 10 in which the amplifier (35) comprises a Darlington bipolar transistor (22) connected as an emitter follower. Apparatus according to claim 8 comprising means (26) for applying a fixed potential to the input of the amplifier (35) while the signal line (5) receives the output signal from the photoelectric conversion element, and permitting the input to the amplifier (35) to float while the output of the amplifier is coupled to the signal line (5). Apparatus according to any one of claims 7 to 12, comprising: capacitive storage means (7) for storing the output of the amplifier; output means (9,11) for providing an output signal; and output switch means (10) for coupling the capacitive storage means to the output means, so that the output signal is provided based on the signal stored by the capacitive storage means. Apparatus according to claim 13 in which the gain of the amplifier is set to substantially compensate for the attenuation of the signal stored by the capacitive storage means by capacitive division with the input capacitance of the output means. Apparatus according to claim 13 or 14 in which there are a plurality of said capacitive storage means, each having a respective said amplifier and at least one respective said photoelectric conversion element, each said capacitive storage means having a respective said output switch means to couple it to the said output means, the output means being common to the plurality of capacitive storage means. Apparatus according to any one of the preceding claims in which the said transistor (2, QS) of the photoelectric conversion element is a phototransistor for generating carriers in the control region of the transistor upon reception of optical energy and outputting the photoelectric conversion output from a main electrode region of the transistor. Apparatus according to claim 16, wherein the said transistor of the photoelectric conversion element is a bipolar or static induction transistor. Apparatus according to claim 16 in which the photoelectric conversion element comprises a bipolar transistor and a capacitance at the base of the bipolar transistor. Apparatus according to any one of claims 1 to 15 in which the photoelectric conversion element comprises a photodiode (D11-D22), and the said transistor of the photoelectric conversion element is coupled to receive the photoelectric conversion signal from the photodiode at the control region of the transistor. Apparatus according to any one of the preceding claims comprising a plurality of said photoelectric conversion elements. A method of driving photoelectric conversion apparatus, comprising: providing an output from a transistor (2 QS, M111-M122) of a photoelectric conversion element to a signal line (5), in accordance with a signal at the control region of the transistor; and resetting the control region of the said transistor of the photoelectric conversion element to a potential determined in accordance with a reset potential, characterised by setting the reset potential on the basis of the output on the signal line. A method according to claim 21 in which a first output on the signal line (5) is used to set a reset potential, and a subsequent output on the signal line (5) is a photoelectric conversion output provided in accordance with a photoelectric conversion signal at the control region of the transistor, and the subsequent output is used to generate an output signal. A method according to claim 22 in which the said first output on the signal line (5) is also a photoelectric conversion output provided in accordance with a photoelectric conversion signal at the control region of the transistor. A method according to claim 22 in which the said first output on the signal line (5) is provided in accordance with a signal at the control region of the transistor following a dark state signal accumulation period or following a signal accumulation period substantially shorter than the period for accumulating the signal for the said subsequent output. A method according to any one of claims 22 to 24 in which the apparatus comprises means (35, 26, 24) for receiving the output from the signal line (5) and generating a potential therefrom, and switching means (27) for connecting the output of the said means to the signal line (5), and the method comprises using the said means to generate a potential from the said first output and connect the potential to the signal line (5) via the switching means (27) as a reset potential, and subsequently opening the switching means (27) and using the said means to generate a potential from the said subsequent output and outputting the potential as an output signal. A method according to any one of claims 21 to 25 comprising resetting the control region of the transistor of the photoelectric conversion element to a potential determined in accordance with a predetermined reset potential (V cc ), and subsequently resetting the control region of the transistor of the photoelectric conversion element to a potential determined in accordance with a reset potential set on the basis of the output on the signal line. A method according to claim 26 comprising: resetting the control region of the transistor of the photoelectric conversion element to a potential determined in accordance with a predetermined reset potential (V cc ); providing an output from the transistor of the photoelectric conversion element to the signal line; resetting the control region of the transistor of the photoelectric conversion element to a potential determined in accordance with a reset potential set on the basis of the output on the signal line; accumulating a photoelectric conversion signal; providing a photoelectric conversion output from the transistor of the photoelectric conversion element to the signal line in response to the presence of the photoelectric conversion signal at the control region of the transistor; and generating an output signal from the photoelectric conversion output on the signal line. A method according to any one of claims 21 to 27 in which the transistor of the photoelectric conversion element is a phototransistor which accumulates carriers generated upon reception on optical energy in its control region and provides the photoelectric conversion output on the basis of the accumulated carriers from a main electrode region of the transistor. A method according to claim 25, wherein the said means for receiving the output transfers an output from said photoelectric conversion element to a storage capacitance to connect a charge of said storage capacitance to said switching means and output the said output signal.

Inventors: SHINOHARA MAHITO, UENO ISAMU, SHINOHARA, MAHITO, UENO, ISAMU, SHINOHARA, MAHITO, C/O CANON K.K., UENO, ISAMU, C/O CANON K.K.
Applicants: CANON KK, CANON KABUSHIKI KAISHA
Application year: 1995
Main classification: H04N3
IPC codes: H04N3