Multi-wire saw device and slice method using the same

Abstract: Two sets of clip boards (25a, 25b; 26a, 26b) for holding a crystalline silicon block (24) therebetween are disposed movable on a wall free to ascend and descend. The multi-wire saw allows the sliced wafer to fall as it is into a cassette (5). As material of a cassette (5), Teflon resin is used and wires (4) as partitions are spanned through the holes bored in the side boards (1a, 1b) of the cassette.

Description: BACKGROUND OF THE INVENTION 1.Field of the invention The present invention relates to a multi-wire saw device used for slicing a semiconductor ingot block and cutting the sliced ingot into a semiconductor wafer, to a slice method using the same, and to a cassette for housing a wafer sliced with the same. 2. Description of the Related Art When slicing a semiconductor ingot block of lump semiconductor by using a conventional multi-wire saw device (hereinafter abbreviated to "MWS device"), first fix a metal plate, made of aluminum or the like, or a carbon board on a base plate mounted in the MWS device with vises or by inserting both ends of said metal plate or carbon board into said base plate. Next, referring to Fig. 10A, bond a disposable board 101 of glass board or carbon board to said aluminum plate with adhesive. Then, bond a semiconductor ingot block 103 to said disposable board 101 with an adhesive 102. With respect to said semiconductor ingot block 103, for example, the wafer cut surface thereof comprises a square and the width direction comprises a long rectangle. Or, a substantially circular semiconductor ingot block having partially flat cut surface in the width direction is also allowable. After mounting this set ingot holder on the MWS device, start slicing while applying a slurry, a mixture of whetstone grain and oil. When a slice advances and a wire cuts in the disposable board 101 at some degree (several mm), a slice ends (refer to Fig. 10B). After this, draw out a wire from said disposable board 101 and the semiconductor block and draw out the ingot holder from the MWS device. Thereafter, remove the slurry sticking to the semiconductor wafer with light oil, then dip it into a dedicated solution for stripping off the epoxy adhesive 102 and peel semiconductor wafers from the disposable board 101 one by one. The semiconductor wafers peeled off are manually housed one by one in the wafer cassette. The peeled wafer is housed in the cassette. As materials for partition separating wafers in the cassette, resins, such as fluorine and Teflon, or metals, such as aluminum, are used, and the spaces between wafers must be taken to be as wide as several mm from the point of structural view. Thus, from a consideration of the factors of working conditions, such as weight and size of a cassette, the number of housed wafers is normally 20 to 25 sheets. For a width of less than 1 mm, a plate-like partition made of resin or metal, extremely diminishes in strength and cannot substantially function as "partition". In addition, when using a thin plate as partition, it is extremely difficult to maintain the flatness over the whole surface and there is a fear about mutual contact of adjacent walls. A tens to hundreds of µm thick plate has only a strength substantially equal to that of papers, is far inferior in strength, and cannot serve as partition. With the above multi-wire saw device and the slice method using the same, a wire is cut into even a part of the disposable board 101, and a disposable board 101 is needed for slicing each semiconductor ingot block, thereby forming a factor of raising the cost. In addition, adjacent semiconductor wafers peeled off from a disposable board 101 stick to each other before being housed in the wafer cassette and are difficult to separate, thereby forming a factor of lowering the yield due to cracking and fragmentation as well as impairing the operational efficiency. Furthermore, mentioned above, it is required in slicing to adhere a semiconductor ingot to a disposable board, but in the case of an adhesive comprising two liquids, the steps of taking out and mixing the main ingredient and the hardening agent, uniformly applying the adhesive to the disposable board and tearing off a wafer from the disposable board are needed, and this forms a factor of an increase in cost from the viewpoints of number of steps and material costs (disposable board and adhesive). Furthermore, US-A-4625093 discloses a method of removing stock from difficult to machine workpieces by use of two laser beams irradiated along intersecting axes, each producing kerfs for separating the stock from the workpiece. SUMMARY OF THE INVENTION It is a first object of the present invention to provide a multi-wire saw device that allows a board to be non-disposable and to omit the steps of tearing off an adhesive after slicing of a material ingot, and a slice method using the same, enabling a cost cut in materials, yield improvement and raised operational efficiency. In addition, the present invention seeks to provide a wafer housing cassette for use with the multi-wire saw device and permitting a narrow partition interval. According to the invention, these objects are accomplished by a multi-wire saw device as defined in claim 1, and by a slice method using this multi-wire saw device as defined in claim 5. Advantageous further developments of the invention are subject of the accompanying dependent claims. With these devices and method, because of being arranged to comprise a laser for cutting said semiconductor ingot at a right angle to the cutting direction of said wire, the multi-wire saw device of the present invention can cut said semiconductor ingot into individual semiconductor wafers by using a row of wires and the laser and separate them from each other. Thus, it becomes unnecessary to slice even the hold means by means of wires. Because said laser is arranged to be movable vertically, longitudinally and transversely, the multi-wire saw device of the present invention can set the size of two vertical sides in the cut surface of a semiconductor wafer by the vertical translation, cut it into a semiconductor wafer by the longitudinal translation and adjust the focal position of said laser to each semiconductor wafer. Because of being arranged to further comprise a wafer cassette for housing a semiconductor wafer to fall under said semiconductor ingot after the completion of cutting, the multi-wire saw device of the present invention in which semiconductor wafers after cutting are automatically housed in the wafer cassette can omit the very laborious operation of manually separating semiconductor wafers hardly separable due to the residual slurry from each other. Because of an arrangement that said wafer cassette includes housing sections for individually housing individual semiconductor wafers and control means is further provided for controlling the focal position of the laser on the semiconductor wafer to be cut and the position of the housing area start surface in said housing section for housing the relevant semiconductor wafer to come into much the same plane, the multi-wire saw device of the present invention can stably house said semiconductor wafers in the housing section of the wafer cassette even if a variation occurs in the thickness of cut semiconductor wafers. With the slice method of the present invention, because the wafer cut surface of said semiconductor ingot comprises a rectangle and this method is arranged to comprise the steps of fixing the short side of said semiconductor ingot on said hold means; half-slicing said semiconductor ingot in the range from the short side up to the long side of the cut surface thereof; and cutting the semiconductor wafer after cutting in such a manner the wafer cut surface becomes a square by means of said laser, semiconductor wafers whose cut surface after cutting is a square can be obtained as ever without use of a disposable board as a part of said hold means or without wasting a disposable board if used. Further objects and advantages of the present invention will be apparent from the following description of the preferred embodiments of the present invention as illustrated in the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1A is a perspective view showing a cassette according to the present intention; Fig. 1B is to illustrate an arrangement of holes on boards of the cassette; Fig. 2A is a perspective view showing another cassette according to the present invention; Fig. 2B is to illustrate wires serving as partitions. Fig. 3 is a structure outline of an example of a multi-wire saw; Figs. 4A to 4D are explanatory drawings of the operation of the multi-wire saw of Fig. 3; Fig. 5 is an explanatory drawing of the operation of the multi-wire saw of Fig. 3; Fig. 6 is a perspective view of a multi-wire saw device according to an embodiment of the present invention; Figs. 7A and 7B are perspective views showing an adhesion state of a semiconductor ingot and a disposable board, where Fig. 7A shows the state before slicing, and Fig. 7B shows the state after slicing; Figs. 8A and 8B illustrate a slice method using the multi-wire saw device of Fig. 1, where Fig. 8A is a front sectional view and Fig. 8B is a side view; Fig. 9 is an explanatory drawing of the relation between the focal position of a laser and the housing section of a wafer cassette; and Fig. 10A and 10B are perspective views showing the conventional adhesion state of a semiconductor ingot and a disposable board, where Fig. 10A shows the state before slicing and Fig. 10B shows the state after slicing. DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, an example of a multi-wire saw will be described by referring to the drawings. As shown in Fig. 3, the multi-wire saw is provided with three wire guides 20, 21 and 22. In these wire guides, grooves corresponding to the thickness of the wafer to be sliced, the diameter of a wire and the like are cut and wires 23 are wound along these grooves at a pitch of 600 µm. These wires 23 are travelled by a wire drive not shown. Between the wire guides 21 and 22, two sets of clip boards 25a, 25b and 26a, 26b for holding a 100 × 100 × 160 mm crystalline silicon block 24 therebetween are disposed movable on a wall free to ascend and descend 28 (cf. Figs. 4A to 4D). Incidentally, the clip boards 25a, 25b as the first sandwich hold section are 40 mm wide and as the second sandwich hold section are 50 mm wide, rubber is placed on the contact surface of these clip boards with the silicon block 24 so as to keep the silicon block 24 from being damaged. Furthermore, near the wire guides 21 and 22 are disposed slurry nozzles 27a and 27b for jetting slurry, a mixture of whetstone grains and oil, having a lubricity and grindability. In addition, the multi-wire saw is provided with a cassette 5 as shown in Fig. 1A for housing a wafer sliced as it is. As material of the cassette 5, Teflon resin is used. In the 190 × 110 × 10 mm boards 1a and 1b, as shown in Fig. 1B, 20 holes, 100 µm in diameter, are bored vertically at a 3 mm pitch and 230 rows of holes are bored horizontally at a 600 µm pitch. Between these boards 1a and 1b, two 105 x 110 × 10 mm boards 2a and 2b are disposed, at the bottom of which rod-like boards 3a and 3b are disposed as the base boards for preventing the fall of housed wafers. In a hole bored on the boards 1a and 1b, a wire 4 is spanned as partition. A 70 µm-diametered tungsten wire is used for the wire 4. A cassette may be arranged as shown in Fig. 2A. In Fig. 2A, the cassette 6 comprises side boards 11a and 11b, at whose four corners SUS round bars 10a, 10b, 10c and 10d of 18 mm diameter and 180 mm length are disposed for holding the side boards 11a and 11b at a predetermined space. These round bars 10a, 10b, 10c and 10d are covered with 1 mm thick Teflon tubes, on which grooves, 60 µm in depth, are cut at a 600 µm pitch. The spacing of the round bars 10a, 10c to those 10b, 10d is respectively 100 mm, whereas that of the round bars 10a, 10b to those 10c, 10d is respectively 125 mm. Furthermore, at the bottom, the boards 12a and 12b are disposed, forming a floor for preventing the housed wafers from falling. As shown in Fig. 2B, on the round bars 10a, 10b, 10c and 10d, a plurality of wires 13 serving as partitions are disposed over a width of 70 mm from the center to the right and the left, that is, a total width of 140 mm at a pitch of 600 µm. Next, the operation of this example will be described by referring to Figs. 4A to 4D and 5. Incidentally, with this example, both ends of a 160 mm long semiconductor block 24 are left untouched by 10 mm, respectively, and, accordingly, the actual slice width is 140 mm. First, as shown in Fig. 4A, the clip boards 25a and 25b move forward and hold the top of the semiconductor block 24 therebetween. In this state, when the multi-wire saw starts, the wire 23 travels and simultaneously slurry jets from the slurry nozzles 27a and 27b. The wall 28 is lowered by a not shown lift mechanism, and consequently the clip boards 25a and 25b lower. With this lowering movement, slicing the semiconductor block 24 with the wire 23 is accomplished as shown in Fig. 4B. Incidentally, because the width of the clip boards 25a and 25b is 40 mm, when slicing the semiconductor block 24 goes on the order of 55 mm and the wire 23 comes near the clip boards 25a and 25b, the clip boards 26a and 26b move forward and hold the lower portion of the semiconductor block 24 therebetween, as shown in Fig. 4C. At this time, the lower end of the semiconductor block 24 is kept exposed on the order of 2 mm from the bottom of the clip boards 26a and 26b. The sandwich hold of the semiconductor block 24 with the clip boards 25a and 25b is released, and further the clip boards 26a and 26b are lowered by a not shown lift mechanism, thereby continuing the slicing of the semiconductor block 24. Meanwhile, because the clipping force of the clip boards 26a and 26b disperses on each wafer 7 and the two 10 mm end portions of the block 24, no breakage of a wafer occurs. The thickness of a wafer can be set at 200 to 450 µm, and the cutting off ranges can be set from 210 to 220 µm. At the termination of the slicing, as shown in Fig. 4D, the wafer 7 is held between the clip boards 26a and 26b, and the lower end of each wafer is exposed on the order of 2 mm from the bottom of the clip boards 26a and 26b. Here, as shown in Fig. 5, the top wires 4 of the cassette 5 are inserted into the respective gaps between a plurality of wafers 7 and each wafer is held between the clip boards 25a and 25b as well. Next, the hold between the clip boards 26a and 26b is released. Then, with lowering the clip boards 25a and 25b driven by the not shown lift mechanism, each wafer begins to be housed along the relevant wires 4 serving as partitions of the cassette 5 into the cassette 5, and when the half length of each wafer 7 is housed in the cassette 5, the hold between the clip boards 25a and 25b is released and individual wafers 7 are housed into the cassette 5 while being separated by the wires 4 serving as partitions of the cassette 5. Incidentally, since slurry happens to gather between the respective wafers 7 and consequently their sticking together is highly probable, it is advisable that the clip boards 26a and 26b are arranged to be somewhat swingable longitudinally and transversely, so that the wafers 7 easily fall into the cassette 5. With the multi-wire saw, wafers can be housed into the cassette as they are simultaneously to the completion of cutting, and a very laborious work of manually tearing off a wafer hardly separable due to the residual slurry can be omitted. In addition, because of no need for either disposable board or adhesive, the steps of applying and tearing off the adhesive can be omitted, thereby facilitating the operation greatly, and further the expendables, such as adhesive and disposable boards, can be saved, thereby enabling a cost cut. Hereinafter, an embodiment of the present invention will be described by referring to the drawings. Fig. 6 is a perspective view of a multi-wire saw device according to the embodiment of the present invention. Figs. 7A and 7B are perspective views showing an adhesion state of a semiconductor ingot and a disposable board, where Fig. 7A shows the state before the slicing by wires, and Fig. 7B shows the state after the slicing. As shown in Fig. 6, the relevant multi-wire saw device comprises wires 111, a wire guide 112 for tensely spanning the wires 111 at predetermined spaces, a disposable board 114 fastened to a base plate to be mounted in the MWS device for fixing a semiconductor ingot block 113, a CO 2 laser 115 for cutting said semiconductor ingot block 113 at a right angle to the cutting direction of said wire 111, and a wafer cassette 116 for housing semiconductor wafers 113' after cutting. In Fig. 6, numeral 117 denotes a travelling wafer cassette stand. Said wires 111, as one example, 180 µm in diameter, travel by wire driving mechanism not shown. Said wire guide 112 comprises, e.g., three wire guides, and these are provided with a plurality of grooves depending on the thickness of the semiconductor wafer 113' to be sliced, the diameter of said wires 111 and the like, with which grooves said wires 111 are spanned at predetermined spaces. Incidentally, only two wire guides are shown in Fig. 6. Said semiconductor ingot block 113, made of a crystalline silicon, whose wafer cut surface is 110 mm in long side and 100 mm in short side, comprises a parallelepiped, 160 mm long. Said disposable board 114, made, e.g., of glass board, carbon board or the like, is adhered and fixed through adhesives 118 at one short side of the semiconductor ingot block 113. The disposable board 114 is fixed to the base plate mounted through adhesive and a metal plate such as aluminum or a carbon board in the MWS device. Said base plate and said metal plate or carbon board are fastened with vises, or by inserting both ends of said metal plate or carbon board into said base plate. Said CO 2 laser 115, e.g., 500W in output power and 2500 mm/min in cutting rate, with the assist gas of Air, and disposed movable vertically, longitudinally and transversely, sets the length of a semiconductor wafer 113' on the long side of a wafer cut surface of a semiconductor ingot block 113 by the vertical movement, cuts the semiconductor wafer 113' by the transverse movement, and aligns the focal position of the CO 2 laser 115 to the semiconductor wafer 113' to be cut by the longitudinal movement. Said wafer cassette 116 includes housing sections for individually housing a semiconductor wafer 113' after cutting and, for example, comprises as many housing sections as the number of semiconductor wafers 113' to be cut. Hereinafter, a slice method of said semiconductor ingot block 113 will be concretely described. When slicing the semiconductor ingot block 113 into a semiconductor wafer 113', first, fix a metal plate such as aluminum or a carbon board on the base plate mounted in the MWS device with vises or by inserting both ends into the base plate. Next, bond a disposable board 114 of glass or carbon board to said metal plate with adhesive, apply and harden adhesive 118 between said disposable board 114 and a semiconductor ingot block 113 at 50°C for 2 hours for bonding them together. And, mount this set ingot holder in the MWS device and start slicing while applying slurry, a mixture of whetstone grains and oil, over both ends. Here, conditions for slicing are let to be as follows: 6m/sec in the travelling rate of a wire, 300 µm in the lowering speed of a semiconductor ingot block 113, and 350 µm in board thickness of the semiconductor wafer 113' to be sliced. Slicing proceeds and the wire 111 enters the semiconductor ingot block by 105 mm to 107 mm, when the travelling of the wire and the lowering of the semiconductor ingot block 113 stops. Next, move the CO 2 laser 115 to a predetermined position, that is, vertically move the CO 2 laser 115 in such a manner that the four sides of the wafer cut surface is equal in length (a semiconductor wafer of 100 mm x 100 mm), transversely move it in such a manner as to be positioned on either the left or right side with which a cut starts, and longitudinally move it to adjust the focal position relative to the semiconductor wafer to be cut. As shown in Fig. 8, after aligning the position of the CO 2 laser 115 for each semiconductor wafer 113', cut individual semiconductor wafers 113' one by one. As shown in Figs. 8A and 8B, the relevant cut semiconductor wafer 113' is housed in the wafer cassette 116 provided below the semiconductor ingot block 113 (semiconductor wafer 113'). Here, in each individual of said cut semiconductor wafer 113', a variation in thickness, e.g., a variation of 350 µm ± 10 µm occurs. Accordingly, as shown in Fig. 9, by having control means 119 for controlling the focal position of the CO 2 laser 115 corresponding to the semiconductor wafer 113' to be cut and the position of the housing area start surface in said housing section 116a for housing the relevant semiconductor wafer 113' to come into much the same plane, for example, electrically sensing the focal position of the CO 2 laser 115 corresponding to the semiconductor wafer 113' to be cut and the position of the housing section 116a corresponding to the relevant semiconductor wafer 113' and mechanically moving the relevant housing section 116a in synchronization with this sensing, all semiconductor 113' wafers can be stably housed in individual housing sections 116a of the wafer cassette even if a variation occurs in the thickness of semiconductor wafers 113'. Thus, mistake in housing, damage of semiconductor wafers 113' or the like can be prevented. To be concrete, by a fine adjustment of the travelling wafer cassette stand 117, adjust the position of the relevant housing section 116a. As described above, with the multi-wire saw device of this embodiment, because of being arranged to comprise a laser 115 for cutting said semiconductor ingot block 113 at a right angle to the cutting direction of a wire 111, said semiconductor ingot block 113 can be cut and separated by using a wire 111 out of a row of wires and the laser 115. This makes it unnecessary to slice the disposable board 114 with a wire 111. Thus, semiconductor wafers 113' can be obtained without use of a disposable board 114 or without waste, because a disposable board can be recycled even if it was used, and consequently a cost cut in materials can be achieved. Furthermore, separating a semiconductor wafer 113' from the disposable board 114 without use of solvent or the like becomes possible, thereby enhancing the operational efficiency. By having a wafer cassette 116 provided for housing a semiconductor wafer 113' to fall under said semiconductor ingot block 113 after the completion of cutting, semiconductor wafers 113' after cutting are automatically housed in the wafer cassette 116, so that it becomes possible to omit the very laborious operation of manually separating semiconductor wafers hardly separable due to the residual slurry from each other, thereby enabling an increase in yield and operational efficiency. By incorporating housing sections 116a for individually housing individual semiconductor wafers 113' into said wafer cassette 116 and having control means 119 provided for controlling the focal position of the CO 2 laser 115 corresponding to the semiconductor wafer 113' to be cut and the position of the housing area start surface in said housing sections 116a for housing the relevant semiconductor wafer 113' to come into much the same plane, said semiconductor wafers 113' can be stably housed in the housing sections 116a of the wafer cassette 116 even if a variation occurs in the thickness of cut semiconductor wafers 113'. With the slice method according to the present invention, because the wafer cut surface of said semiconductor ingot block 113 comprises a rectangle and this method is arranged to comprise the steps of fixing the short side of said semiconductor ingot block 113 on said hold means; half-slicing said semiconductor ingot block 113 in the range from the short side up to the long side of the cut surface thereof; and cutting the semiconductor wafer after cutting in such a manner the wafer cut surface becomes a square by means of said laser, semiconductor wafers whose cut surface after cutting is a square can be obtained as ever without use of a disposable board 114 or without waste because a disposable board can be recycled if used. Incidentally, a multi-wire saw device is described by using a parallelepiped of semiconductor ingot block in this embodiment, but needless to say, even if using a semiconductor ingot block having a partially flat cut surface in the width direction and held at the relevant cut surface by hold means, an equal advantage can be obtained. As described above, with a multi-wire saw device according to the present invention, because of being arranged to comprise a laser for cutting said semiconductor ingot at a right angle to the cutting direction of said wire, it is possible to cut said semiconductor ingot into individual wafers by using a row of wires and the laser and separate them from each other. Thus, it becomes unnecessary to slice even the hold means by means of wires and moreover no disposable board as a part of the hold means is used or a disposable board can be recycled even if it was used, so that semiconductor wafers can be obtained without waste, and a cost cut in materials can be achieved. Furthermore, separating a semiconductor wafer from the hold means without use of solvent or the like becomes possible, thereby enhancing the operational efficiency. By having a wafer cassette provided for housing a semiconductor wafer to fall under said semiconductor ingot after the completion of cutting, semiconductor wafers after cutting are automatically housed in the wafer cassette, so that it becomes possible to omit the very laborious operation of manually separating semiconductor wafers hardly separable due to the residual slurry from each other, thereby enabling an increase in yield and operational efficiency. By incorporating a housing section for individually housing each individual semiconductor wafer into said wafer cassette and having control means provided for controlling the focal position of the laser on the semiconductor wafer to be cut and the position of the housing area start surface in said housing section for housing the relevant semiconductor wafer to come into much the same plane, said semiconductor wafers can be stably housed in the housing section of the wafer cassette even if a variation occurs in the thickness of cut semiconductor wafers. With the slice method according to the present invention, because the wafer cut surface of said semiconductor ingot comprises a rectangle and this method is arranged to comprise the steps of fixing the short side of said semiconductor ingot on said hold means; half-slicing said semiconductor ingot in the range from the short side up to the long side of the cut surface thereof; and cutting the semiconductor wafer after cutting in such a manner the wafer cut surface becomes a square by means of said laser, semiconductor wafers whose cut surface after cutting is a square can be obtained as ever without use of a disposable board as a part of said hold means or without wasting a disposable board if used. Many widely different embodiments of the present invention may be constructed without departing from the scope of the present invention. It should be understood that the present invention is not limited to the specific embodiments described in the specification, except as defined in the appended claims.

Claims: A multi-wire saw device for cutting a material ingot, comprising a hold means (114) for holding said material ingot; and a laser (115) for cutting said material ingot, characterized in that said material ingot is a semiconductor ingot (113); a row of wires (111) is provided, said wires being tensely arranged at predetermined spaces for cutting said semiconductor ingot (113) into a plurality of semiconductor wafers (113'); and said laser (115) is arranged to cut said semiconductor ingot (113) at a right angle to the cutting direction of said wires (111). The multi-wire saw device as set forth in claim 1, characterized in that said laser (115) is arranged to be vertically, longitudinally, and transversely movable. The multi-wire saw device as set forth in claim 1, characterized by further comprising a wafer cassette (116) for housing a semiconductor wafer (113') which falls under said semiconductor ingot (113) after the completion of cutting. The multi-wire saw device as set forth in claim 3, characterized in that said wafer cassette (116) includes housing sections (116a) for individually housing individual semiconductor wafers (113'), and said multi-wire saw device further comprises control means (119) for controlling the focal position of the laser (115) on the semiconductor wafer (113) to be cut and the position of the housing area start surface in said housing section (116a) for housing the relevant semiconductor wafer (113') to come into much the same plane. A slice method using the multi-wire saw device as set forth in claim 1, characterized in that the wafer cut surface of said semiconductor ingot (113) comprises a rectangle, and by the steps of fixing the short side of said semiconductor ingot (113) on said hold means (114); half-slicing said semiconductor ingot (113) in the range from the short side up to the long side of the cut surface thereof; and cutting the semiconductor wafer (113') after cutting in such a manner that the wafer cut surface becomes a square by means of said laser (115).

Inventors: TONEGAWA TADASHI, WAKUDA JUNZO, WAKUDA, JUNZO
Applicants: SHARP KK, SHARP KABUSHIKI KAISHA
Application year: 1995
Main classification: B28D7
IPC codes: B28D5