A METHOD OF TREATING A SEMI-CONDUCTOR WAFER

Abstract: A method of treating a semi-conductor wafer is described in which a short-chain polymer is deposited on the wafer to planarise surface features on the wafer and a diffusion layer is deposited on the surface of the polymer layer to allow moisture to be released from the polymer at a controlled rate.

Description: A method of treating a semi-conductor wafer This invention relates to a method for treating a semi¬ conductor wafer and in particular, but not exclusively, to what is known as planarisation. Our Copending International Application No. PCT/GB93/- 01368 (published as O94/01885) describes two methods of depositing a short-chain polymer on a wafer to form a generally planar layer: 1. A method of treating a semi-conductor wafer comprising, depositing a liquid short-chain polymer having the general formula Si χ (OH) y or Si χ H (OH) z on the wafer to form a generally planar layer. 2. A method of treating a semi-conductor wafer, including positioning the wafer in a chamber, introducing into the chamber silicon-containing gas or vapour and a compound, containing peroxide bonding, in vapour form, reacting the silicon-containing gas or vapour with the compound to form a short-chain polymer and condensing the polymer on the wafer to form a generally planar layer. For the purpose of this specification these methods will be known as a method of the type described. With the method of the type described the polymer will be in liquid form, at least to the extent that it is capable of a degree of self-levelling and, as is noted in Applica- tion No. PCT/GB93/01368, the water in the layer has to be removed at least partially, by heating. In order to prevent cracking, once a quantity of the water had been removed, a relatively thick capping layer was deposited prior to heating with the intention of providing physical stability for the polymer layer. Whilst this is advantage¬ ous it has not proved entirely successful as careful control of the process is required. From one aspect the invention consists in a method of the type described, further comprising depositing a diffu¬ sion layer on the surface of the polymer layer to allow moisture to be released from the polymer at a controlled rate. Preferably the diffusion layer acts as a permeable membrane. In a preferred embodiment the diffusion layer is deposited at between -20 and 60°C and preferably at around 0°C. The diffusion layer can be deposited by Plasma Enhanced Chemical Vapour Deposition (PECVD) and may be of the order of 500°A. Once the diffusion layer is deposited, the wafer may be subjected to a preliminary heating stage prior to having a capping layer deposited. A final bake may then take place between 400-475°C. As has been mentioned in the earlier Application No. PCT/GB93/01368 the polymer layer may be preceded by the deposition of an underlayer or seed layer. The method can conveniently include two chambers, one being a 'cold' chamber for the deposition of the polymer layer and the diffusion layer and the other being a hot chamber for the deposition of the underlayer and the capping layer. The invention may be performed in various ways and a specific embodiment will now be described, by way of example, with reference to the accompanying drawings, in which:- Figure 1 to 4 illustrates schematically the steps of a planarisation process with the exception of the deposition of the diffusion layer. Figures 1 to 4 substantially correspond with Figures 3a to 3d of Application No. PCT/GB93/01368 with the excep¬ tion that Figure 3 replaces Figure 3c of the earlier Application. Thus the explanation and variations described in the earlier Application in connection with Figures 1, 2 and 4 (3a, 3b and 3d) substantially stand and are hereby incorporated into this specification. There is, however, an additional proposal that there should be two chambers in the apparatus. The first is a •hot' chamber in which it is proposed that the steps illustrated in Figures 1 and 4 (of this Application) should be performed, whilst the second chamber is a 'cold' chamber in which the steps described in connection with Figures 1 and 2 (of this Application) are performed. The use of two chambers is not essential, but substantially increases the process control and repeatability. Turning to Figure 3 it has been discovered that the integrity of the polymer layer is very much dependent on the rate of loss of moisture being carefully controlled. Such control can be achieved by very careful temperature control, but this is awkward, expensive and time consuming. The Applicants have now appreciated that if they deposit under cold conditions (-20 to 60°C, but preferably at 0°C) a very thin capping layer, e.g. of Si0 2 , then the lattice structure of that layer is sufficiently open for it to act as a diffusion membrane, which controls the rate of moisture loss from the polymer or planarising layer when the wafer is heated, for example, by the heating up of the 'hot' chamber, to which the wafer can be transferred, prior to the Figure 4 "hot" capping. Typically this heating may raise the wafer temperature to between 200-450°C (preferably 300°C) . Once that later cap is deposited a furnace or other final bake to 400°to 475°C (preferably 450°C) can take place. The 'cold* cap or diffusion layer is preferably around 500°A. The use of this 'cold* cap has produced high quality planarisation layers without cracks. One further improvement which has been noted can be obtained by the use of N 2 0, 0 2 or 0 2 containing gas plasma after the underlayer has been deposited. This can in affect be a continuation of the deposition process or a separate step. It appears to enhance the 'flowing' properties of the planarising layer. This feature can be beneficially used in a method of the type described with or without the 'cold' cap.

Claims: Claims 1. A method of the type described further comprising depositing a diffusion layer on the surface of the polymer layer to allow moisture to be released from the polymer at a controlled rate. 2. A method as claimed in Claim 1, wherein the diffusion layer acts as a permeable membrane. 3. A method as claimed in Claim 1 or Claim 2, wherein the diffusion layer is deposited at between -20 and 60°C. 4. A method as claimed in Claim 3, wherein the diffusion layer is deposited at around 0°C. 5. A method as claimed in any one of the preceding Claims, wherein the diffusion layer is deposited by Plasma Enhanced Chemical Vapour Deposition. 6. A method as claimed in any one of the preceding Claims, wherein the layer is of the order of 500A° Nick. 7. A method as claimed in any one of the preceding Claims, further including a preliminary heating stage. 8. A method as claimed in Claim 7, wherein the layer is subsequently capped with a capping layer and the wafer is then baked. 9. A method as claimed in anyone of the preceding Claims, wherein the deposition of the polymer layer is preceded by the deposition of an underlayer or seed layer. 10. A method as claimed in any one of the preceding Claims, where it is performed in two chambers; one being a 'cold' chamber for the deposition of the polymer layer and diffusi- on layer and the other being a 'hot' chamber for the deposi¬ tion of the underlayer and the capping layer. 11. A method as claimed in any one of the preceding Claims, further comprising treating the wafer with an N 2 0, 0 2 or an 0 2 containing gas plasma after the underlayer has been deposited.

Inventors: DOBSON CHRISTOPHER DAVID, KIERMASZ ADRIAN, DOBSON, CHRISTOPHER, DAVID, KIERMASZ, ADRIAN
Applicants: DOBSON CHRISTOPHER DAVID, ELECTROTECH EQUIPMENTS LTD, KIERMASZ ADRIAN, DOBSON, CHRISTOPHER, DAVID, ELECTROTECH EQUIPMENTS LIMITED, KIERMASZ, ADRIAN
Application year: 1995
Main classification: H01L21
IPC codes: H01L21