Ram variable size block write

Abstract: A method of enabling a controllable and variable number of bits to be written to a group of cells of a DRAM or SRAM simultaneously in a block, comprised of decoding a predecoded column address signal for enabling writing to cells of the DRAM or SRAM, and block overwriting the predecoded column address signal by means of a block address signal, whereby plural decoders are enabled simultaneously for simultaneous writing to a column of cells notwithstanding the logic levels of the predecoded address signal.

Description: FIELD OF THE INVENTION This invention relates to semiconductor dynamic random access memories (DRAMs) and static random access memories (SRAMs), and in particular a method of enabling a controllable and variable number of bits to be written to a group of cells of a DRAM or SRAM simultaneously in a block, comprising decoding a predecoded column address signal for enabling writing to cells of said DRAM or SRAM. Further, the invention relates to a semiconductor dynamic or static random access memory (DRAM or SRAM) comprising a plurality of Y decoders, a plurality of predecoders having outputs connected to the Y decoders and means for applying address signals to inputs of the predecoders. Corresponding method and RAM-structures are known from US-4,807,189 whereon the preambles of claims 1 and 6 are based. BACKGROUND TO THE INVENTION The invention will be described in detail in the context of DRAMs, allthough it is equally applicable to SRAMs. Bit line decoders (sometimes referred to as Y decoders) typically have several (e.g. 3 or 4) inputs, each of which is chosen from a group of plural decoded addresses (e.g. 4). Normally only one signal in each group of four would be "1" at any time. Referring to Figure 1, each of a group f Y decoders, shown as NAND gates 2, have their outputs connected to the bates of a pair of access field effect transistors 4, for enabling connection of bit lines BL0, /BL0, BL1 and /BL1 to data bus lines DB0, (DB0, DB1 and /DB1 respectively output via sense amplifiers 6. The inputs of NAND gates 2 are connected to different predecoder lines 8 of predecoder buses. The lines of the predecoder buses are connected to the outputs of predecoders, in the embodiment shown being the outputs of groups of gates 10A and 10B. The inputs of the group of gates 10A are connected to a source of Y address signals, Yi and Y(i + 1), and the inputs of the group of gates 10B are connected to a source of Y address signal, Y(i + 2), Y(i + 3). The sources of address signals are input pins to the DRAM. In a typical memory array consisting of 2 10 (1024) bit lines, where four bits of data are accessed simultaneously via four differential databuses, 2 8 (256) Y-decoders each consisting of four input gates, each input chosen from a group of four predecoded addresses, would determine which four bitlines to connect to the databus. The Y-decoders themselves could be implemented as NAND or NOR gates through the application of deMorgan's theorem. In operation, normally only one signal on each of the predecoder lines 8 is "1" at a time, whereby a single decoder is enabled. This limits the ability of the DRAM to provide a block write to plural DRAM cells, with variable and selectable size of the block of cells to be written. Large block writes are accomplished by sequentially writing to groups of bitlines addressed by one Y-decoder. In applications such as computer graphics, where large fields of memory are written with the same value, the speed of block writes implemented sequentially can seriously degrade performance. Standard video random access memory (VRAM) includes a block write feature, but it is only for a fixed sized block of four or eight addresses. Larger blocks would still require a slow, sequential operation. A truth table of Y address input and predecoder line logic level is as follows: Y Address Precoder One Logic Level Yi Yi+1 = Yj Yij(0) Yij(1) YiJ(2) Yij(3) 0 0 1 0 0 0 1 0 0 1 0 0 0 1 0 0 1 0 1 1 0 0 0 1 US-A-5,289,429 discloses a DRAM or SRAM wherein simultaneous writing into memory cells of a block of variable size is realized. In view of the state of art discussed heretofore, it is the object of the present invention to provide a method as defined in the preamble of claim 1 and a semiconductor RAM-device as defined in the preamble of claim 6, which allow plural ones of decoders to become enabled at the same time. Preferably, the number of decoders which are overridden is variable and programmable, thus facilitating turn on and control over the number of decoders that are turned on and thus to control over the size of the block (and thus the page size) that is written to the memory cells. SUMMARY OF THE INVENTION The afore mentioned object is achieved by a method and a semiconductor RAM structure as defined in claims 1 and 6, respectively. In accordance with an embodiment of the invention, the address predecoders can be overridden with a logic signal that can be interpreted by each group of predecoders as an address, resulting in the above object beeing solved. In accordance with an embodiment of the invention, a method of enabling a controllable and variable number of bits to be written to a group of cells of a DRAM or SRAM simultaneously in a block, is comprised of decoding a predecoded signal and enabling writing to cells of the DRAM defined by the decoding, predecoding an address signal and providing the predecoded signal, and overriding the predecoded address signal by means of an address signal. In accordance with another embodiment, a semiconductor dynamic or static random access memory (DRAM or SRAM) is comprised of a plurality of Y decoders, a plurality of predecoders having outputs connected to the Y decoders, apparatus for applying address signals to inputs of the predecoders, and apparatus for applying an overriding address signal to plural ones of the predecoders whereby a block of Y decoders are enabled together. In accordance with another embodiment, in a DRAM or SRAM, a plurality of Y decoder input gates, each having an output connected to gates of pass-through field effect transistors for connecting bit lines to data buses of the DRAM, plural Y address inputs connected to predecoder gates each for decoding N address bits to 2 n predecoder lines, each input of a Y decoder plural input gate being connected to a different set of predecoder lines whereby different sets of address bits may be presented to corresponding different Y decoder plural input gates, and apparatus for applying an overriding address word to plural inputs of the predecoder gates for decoding by a group of Y decoder plural input gates and enabling a corresponding group of pass-through transistors simultaneously. BRIEF INTRODUCTION TO THE DRAWINGS A better understanding of the invention will be obtained by reading the description of the invention below, with reference to the following drawings, in which: Figure 1 is a logic diagram of a decoding portion of a DRAM in accordance with the prior art, Figure 2 is a logic diagram of a portion of the decoding portion of a DRAM of Figure 1, modified in accordance with an embodiment of the present invention, Figure 3 illustrates a logic diagram in accordance with another embodiment of the invention, and Figure 4 is a timing diagram relating to operation of an embodiment of the invention. DETAILED DESCRIPTION OF THE INVENTION Turning now to Figure 2, in accordance with one embodiment the predecoder gates, e.g. 10A, have their parallel pairs of inputs connected to the respective outputs of gates 14. The inputs of gates 14 are connected in parallel, one input being connected to an address line carrying the address signal Yi and the other being connected to a line carrying a block write signal WBi. This structure allows any row address block to be overwritten. With respect to the truth table shown in Table B, any contiguous block of addresses of size 2 k (for example block A, where k=2), beginning at any address m2 k (block A, m=1) can be overwritten as follows: all addresses Y k-1 , Y k-2 ...Y o and / Yk-1 , /Y k-2 .../Y o are forced to 1. The remaining addresses Yn...Yk are set to m2 k . Thus, to implement a block write indicated as A in table B, each of the predecoder lines connected to the outputs of the predecoders, i.e. Y 01(o) , Y 01(1) , Y 01(2) and Y 01(3) , must be forced to logic level '1'. Input lines WB 0 and WB 1 , which are normally at logic '0' levels during non-block write operations, are set to logic '1' levels to force all four predecoded address lines to '1'. Plural decoders are thus enabled simultaneously. Since the control of input lines WB0...WBn is programmable, a variable and controllable block may be written to the DRAM cells resulting from the addresses decoded by decoders 2. In accordance with another embodiment, block sizes of 2 k or 3*2 k can be written in single block write operations. A logic circuit corresponding to Figure 2 to implement the invention is shown in Figure 3. Three-input gates 16 have inputs Y i and Y j to two inputs of one of the gates, with an independent block write input WB ij(X) for each predecoder output. Block sizes of 2 k or 3*2 k can be addressed (such as 3.2 k , where k=2 encompassing block B in table B), beginning at any address m2 k+1 (block B, m=0) or m2 k+1 +2k can be overwritten as follows. All predecoded addresses Y k-2,k-1 , Y k-4,k-3 ....Y 01 are forced to 1. Predecoded addresses Y k-1,k(0) ,Y k-1,k(2) are forced to 1. The remaining addresses Y n,n-1 , Y n-2,n-3 ...Y k+1,k+2 are set to m2 k+1 . The predecoded addresses are forced to 1 by the block control inputs on lines WB ij . As a result the address signals on predecoder lines 8 corresponding to the addresses in block B are overridden and a variable and controllable block may be written to the DRAM cells resulting from the overridden addresses. In DRAM or SRAM memories there will be an upper limit on the number of sense amplifiers (in the case of DRAM) or memory cells (in the case of SRAM), that the write driver will be capable of overwriting. In the worst case all sense amplifiers or cells will have opposite data to the data being written and the write driver output transistor must be more powerful than all sense amplifiers or cell transistors in parallel. This sets an upper limit on the block size for the block write operation. In DRAM it is possible to overcome this limit by writing to the bitlines before the sense amplifier is enabled. The write driver must charge up the bit line capacitance to the write data value prior to enabling the sense amplifiers without having to overcome sense amplifier drive current. Sense amplifiers can be enabled later to fully restore data. Figure 4 is a timing diagram illustrating the above, wherein n bits are written in a block write, n=1...N. After the precharge interval 20 ends, the bitlines are charged, during interval 22, which is initiated by a column address 24. The wordline is addressed by address 26, and the selected memory cells are connected to the bitlines that hold the write data, as shown by logic levels 28 and 29 thereby completing the block write operation. Unselected bit lines are charged with all data (levels 30), and following a bit line sense 32 the bitline capacitance becomes fully charged and restored with original unaltered data from the cells. It should be noted that n must be a power of 2, or 3 times a power of 2 due to the column address format in most DRAMs. Groups of 2 column address bits are predecoded to form a 1 of 4 set of predecoded addresses. For example 10001101 would be predecoded to 0100,0001,1000,0010. To perform a block write on 48 column addresses starting at address 128 the predecoded addresses would be 0010,0111,1111,1111. A person understanding this invention may now conceive of alternative structures and embodiments or variations of the above. All of those which fall within the scope of the claims appended hereto are considered to be part of the present invention.

Claims: A method of writing to a controllable and variable size block of memory cells of a DRAM or SRAM (memory) comprising: (a) receiving address signals from an address source, (b) combining the address signals with programmable block write signals, and (c) generating a predecoded multi-bit address based on the combination of the address signals and the programmable block write signals, characterized by during a block write operating mode and prior to enabling of bit line sense amplifiers of the memory, selected bits of the predecoded multi-bit address signal are overwritten by associated block write signals thereof, thereby allowing multiple memory cells of the controllable size block to be written simultaneously. A method as defined in claim 1 in which the address signals received from an address signal source are column addresses, and the address signal source is comprised of address pins and address input buffers. A method as defined in claim 1, further comprising decoding a predecoded row or column address signal for enabling writing to cells of said DRAM or SRAM, characterized by block overwriting said predecoded row or column address signal by means of said block write signal, whereby plural decoders are enabled simultaneously and simultaneously writing to a column of cells notwithstanding logic levels of the predecoded row or column address signal and enabling bitline sense amplifiers of the DRAM or SRAM following the block overwriting step. A method as defined in claim 3 in which said block write signal is variable. A method as defined in claim 3 including disabling sense amplifiers of the DRAM or SRAM prior to the block overwriting step. A semiconductor DRAM or SRAM for supporting a variable size block write mode of operation comprising: (a) means for receiving address signals, (b) means for combining the address signals with block write signals, (c) predecoding means for decoding the combined address signals and block write signals, and (d) decoding means for receiving outputs from the predecoding means and selecting columns of memory cells, characterized by during a block write operation mode and prior to bit line sense amplifiers of the memory device being enabled, selected ones of the outputs of the predecoding means are overwritten by associated block write signals, thereby simultaneously enabling multiple decoding means. A semiconductor DRAM or SRAM as defined in claim 6, wherein the decoding means is comprised of a plurality of Y decoders (2), the predecoding means is comprised of a plurality of predecoders (10A) having outputs (8) connected to the Y decoders (2) and the means for combining the address signals with block write signals further includes means (14) for applying address signals to inputs of the predecoders (10A), further characterized by means (14) for applying said block write signal as an overriding address signal to other inputs of the plural ones of the predecoders whereby a block of the Y decoders (2) are enabled at the same time and means for writing to bitlines of the memory and means for subsequently sensing the bitlines. A semiconductor DRAM or SRAM as defined in claim 6 characterized by a plurality of input gates (10A) having outputs connected to respective inputs of the Y decoders, means for applying row addresses to inputs of said gates (10A) and means for applying said block write signal as an overwriting block address signal to another input of each gate of a plurality of said gates, whereby plural Y decoders (2) are enabled simultaneously for simultaneously writing to a column of cells notwithstanding a logic level of the row address and enabling bitline sense amplifiers of the DRAM or SRAM following the overwriting step.

Inventors: GILLINGHAM PETER B, GILLINGHAM, PETER B.
Applicants: MOSAID TECHNOLOGIES INC, MOSAID TECHNOLOGIES INCORPORATED
Application year: 1995
Main classification: G11C8
IPC codes: G11C11, G11C7, G11C8