Solid-state image pickup device

Abstract: A solid-state image pickup device includes a light receiving cell for accumulating electric charges created in response to a photo energy striking the gate of an amplification-type sensor and then produces a signal from the source region based on the accumulated carriers, a memory cell including an amplification-type memory cell having the same type as that of the above-mentioned amplification-type sensor, to accumulate a signal transferred from the light receiving cell into the base region of the amplification-type memory cell, and a signal line for electrically connecting the source region of the light receiving cell and the source region of the memory cell. The shift of the accumulation start timing to each row of the light receiving cells is suppressed to a small value. The same signal can be read from the memory cell several times.

Description: BACKGROUND OF THE INVENTION Field of the Invention The present invention relates to a solid-state image pickup device and more particularly to a solid-state image pickup device including amplification-type light receiving cells. Related Background Art Figs. 1 to 4 show a structural example of a known solid-state image pickup device, respectively. Fig. 1 is a diagram showing the entire circuit configuration. The pixels 21-11 to 21-mn (shown by broken lines) are arranged in a matrix form in a substrate. Each pixel is formed of an n-channel, normally-on-type (depletion-type) static induction transistor (SIT) 22, a gate capacitor 24 arranged on the floating gate 23 of the SIT 22, and a p-channel, enhancement-type control transistor 25 having a source-drain path connected to the floating gate 23. A video voltage Vd is applied to the drain electrode (substrate) of the SIT forming each pixel. Row lines 26-1 to 26-m are connected to the gate capacitors of the SITs in each of the row groups of the pixels 21-11 to 21-1n, ..., 21-ml to 21-mn arranged in the X-direction, and a vertical scanning circuit (vertical shift register) 27 supplies row selection signals  G1 to  Gm . Each of the column lines 28-1 to 28-n is connected to the sources of the SITs in the column groups of pixels 21-11 to 21-m1, ..., 21-1n to 21-mn arranged in the Y-direction. The column lines are grounded via column selection transistors 29-1 to 29-n, a common video line 30, and a load resistor 31. A horizontal scanning circuit (horizontal shift register) 32 applies column selection signals  S1 to  Sn to the gates of the column selection transistors 29-1 to 29-n. A control gate line 33 is connected to the gate electrode of the control transistor in each pixel to apply a control gate signal  C . An overflow drain line 34 is connected to the drain electrode of each control transistor 25 to apply the control drain voltage V c . Fig. 2 is a plan view showing the layout of four pixels adjoining to one another. Fig. 3 is a cross-sectional view showing the layout taken along the line A-A'. In this layout example, in order to improve the area efficiency of pixels formed on the substrate 40, the adjoining four pixels are symmetrically formed laterally and horizontally in the figure. The substrate 40 serves as the drain of the static induction transistors and is formed of an n + or n-type semiconductor. An n - epitaxial layer 41 is grown on the substrate 40. An isolation region 42 such as a buried insulating material is formed in the epitaxial layer 41 to separate electrically and optically the adjoining pixels. In each pixel, the gate and the source of the SIT are respectively formed by the p + diffusion layer 43 and the n + diffusion layer 44 formed on the surface of the epitaxial layer 41. The n + diffusion layer 44 is connected to the corresponding column lines 28-i and 28-(i+1) via the wiring layer 45, for example, formed of polycrystalline silicon. The row line electrodes 46-i and 46-(i+1) of, for example, polycrystalline silicon are formed on the p + diffusion layer 43 to form the row lines 26-i and 26-(i+1) via a gate oxide film. Thus, a gate capacitor is formed at the area where the row line electrode overlaps the p + diffusion layer 43. The p + diffusion region 43 of each pixel is formed so as to extend toward the middle portion of the adjoining four pixels and acts as the source of the control transistor 25 of each pixel. A p + diffusion layer 47, which acts as the common drain of the control transistors of the four pixels, is formed in common in the surface of the epitaxial layer 41 in the middle portion among the four pixels, spaced the p + diffusion layer forming the gate of the SIT and the source of the control transistor in each pixel. The overflow drain line 34 is connected to the p + diffusion layer 47 by way of the wiring electrode 48. The control gate electrode 49 of the control transistor for the four pixels is arranged in common on the gate oxide film over the surface of the epitaxial layer 41 between the p + diffusion layers 43 and 47 to form the control gate line 33. The operation of the above-configuration is now explained, with reference to the signal waveforms shown in Fig. 4. In this configuration, as described above, pixel signals are sequentially read out in accordance with the X-Y address system where the row lines 26-1 to 26-m are sequentially selected and the column lines 28-1 to 28-n are sequentially selected. All pixels in a selected row line are simultaneously reset during the horizontal blanking period t BL, or the duration from the completion of the signal reading period t H of each row line to the next row selection. In particular, the operation of the pixel 21-22 shall be explained below, with reference to the change in the potential V G (2,2) of the floating gate as shown in Fig. 4. In the floating gate potential V G (2,2) of the pixel 21-22 shown in Fig. 4, the broken line represents the voltage where there is no incident light during imaging. At the timing t 1 , when the voltage of the row selection signal  G2 applied to the row line 26-2 becomes V G , the potential of the floating gate of each SIT connected to the row line is boosted by nearly V G . More exactly, it is boosted by the value expressed by the following formula: (C G / C J + C G ) · V G where C G is the capacitance of the gate capacitor 24 and C J is the parasitic capacitance of the P + diffusion 43. At the timing t 2 , when the column line 28-2 (and thus the pixel 21-22) is selected in response to the column selection signal  S2 reaching a high voltage level, a signal current depending on the gate potential V G (2,2) of the pixel 21-22 flows through the load resistor 31 via the column line 28-2, the column selection transistor 29-2, and the video line 30. The voltage drop across the load resistor 31 is read out as an output signal Vout. This signal reading operation is a nondestructive because the photo-electric charges accumulated in the floating gate are normally left unchanged. Next, at the timing t 3 at which the signal reading from all the pixels 21-21 to 21-2n connected to the row line 26-2 has been completed by completing the selection of the final line 28-n, or at the beginning of the horizontal blanking period t BL , the control gate signal  C (voltage) applied to the control gate line 33 is -V C that turns on the control transistor 25. At this time, since the surface potential  S underneath the control gate 49 changes from  S (0) to  S (-V C ), the gate potential V G (2,2) is forcibly clamped to the potential  S (-V C ). This operation resets the gate potential so that the photo-electric charges Q p which are accumulated in the gate due to the light illumination are swept out. The voltage -V C of the control gate signal  C is set in such a manner that the surface potential  S (-V C ) underneath the control gate electrode 49 substantially equals the pinch-off voltage V GO of the SIT when the control gate signal is applied and the control drain voltage V C is less than  S (-V C ). At the timing t 4 , or the final point of the horizontal blanking period t BL , the row selection signal  G2 falls to a low level while the control gate signal  C rises to zero volts. Thus, the gate potential V G (2,2) is lowered in accordance with the formula: V G (2,2)= S (-V C )-V G . Thereafter, the gate potential is increased by, e.g. Q P /C G (=ΔV GP ) because the photo-electric charges are accumulated in accordance with the light received during the imaging period extending to the next reading operation. In the present configuration, the control gate signal  C is applied to the control gate electrodes of all the non-selected pixels, in addition to the control gate electrodes of the pixels connected to a selected row line. Therefore, when the control gate signal  C becomes a voltage -V C , the surface potential underneath the control gate electrode of a non-selected pixel becomes  S (-V C ), or nearly equals the pinch-off voltage V GO of the SIT so as to limit the amount of photo-electric charges which some of the non-selected pixels accumulate. If the boosted gate potential ΔV GP satisfies  S (-V C )-V G +ΔV GP > S (-V C ), or ΔV GP >V G , the photo-electric charges exceeding the potential  S (-V C ), or the gate potential exceeding the pinch-off voltage V GO of the SIT, are swept out to the overflow drain line 34 via the channel underneath the control gate electrode. Moreover, since the overflow operation of the excessive electric charges is performed at all the non-selected pixels every time the row line is switched, intense incident light does not cause the potential of the floating gate to exceed the pinch-off voltage V GO . Hence, a half-selection signal phenomenon can be effectively prevented. It can be said that a blooming control is performed equivalently. Since resetting each pixel is performed by clamping the floating gate of the SIT to the potential  S (-V C ) using the control gate signal  C , the residual photo-electric charge can be completely eliminated at the reset time. Hence, the present configuration can completely suppress many afterimage phenomena seen often when resetting is done by biasing forwardly the pn junction between the gate and the source region of the SIT. However, the this known example has an operational limitation that since reading and resetting operations are sequentially performed for each row, the accumulation timing for each row is shifted so that the accumulation time for each row may be different when a video signal during, for example, a specific period is taken out. The SIT-type and amplification-type image element itself can perform a nondestructive reading operation. However, there has been a problem that with the light receiving surface kept illuminated with light, when the second reading is done without resetting after the first reading, incident light entering between the first and second reading operations varies the signal amount. EP-A-0488674 discloses an arrangement in which a line sensor is made up of several separate sensor chips, each chip having a line of photoconversion cells and an output amplifier. A noise reduction clamping operation is carried out, both to remove the offset voltage introduced by the output amplifier of a sensor chip, and to remove variations in the signal caused because the different output amplifiers in the different chips may have different offset voltages. In order to perform this clamping operation, a capacitor is connected in series between the output of the multi-chip sensor and the input of a buffer amplifier. A switch is provided so that the line between the output side of the capacitor and the input of the buffer amplifier can be connected to a clamp voltage or can be allowed to float. In the clamping operation, a reset voltage is applied to the input of the amplifier on a selected sensor chip, and the switch connects the output side of the capacitor to the clamp voltage. Therefore the capacitor stores a voltage corresponding to the output of the chip amplifier when the reset voltage is input. While the photoconversion cells on the chip are read, the output side of the capacitor is allowed to float, and therefore the voltage stored on the capacitor, corresponding to the chip amplifier offset, is subtracted from the photoconversion cell signals before they reach the input of the buffer amplifier. It is stated in EP-A-0488674 that the same idea may be applied to two-dimensional arrays, and that each photoconversion cell can be of the self-amplifying type in which charges are accumulated in a control region of a transistor. US-A-4731656 describes a solid state CCD imager having an image pickup field register, a transfer smear sample field storage register, and an associated line register, and a pixel sample field storage register and an associated line register. During the field retrace interval, the image signal from the image pickup field register is clocked through the transfer smear sample field storage register and associated line register into the pixel sample field storage register. The image pickup field register is then reset and, still within the field retrace interval, the contents of the image pickup field register is again clocked into the transfer smear sample field storage register. Therefore, at the end of the field retrace interval, the pixel sample field storage register holds the image signals for the preceding field while the transfer smear sample field storage register holds noise components, corresponding to transfer smear and dark current noise, obtained by re-clocking the image pickup field register after it has been reset. The image signal is read from the pixel sample field storage register through its associated line register, and the corresponding noise components are read from the transfer smear sample field storage register through its associated line register, and the outputs of the two line registers are provided to the inputs of a differential amplifier, so as to subtract the noise components from the image signals. US-A-5 043 821 discloses a solid state image pickup device to which a noise removal circuit is connected. The output signal of the noise removal circuit is inputted to an AID-conversion circuit. SUMMARY OF THE INVENTION The present invention provides a solid state image pickup device as set out in claim 1. The remaining claims set out optional features. The solid-state image pickup device according to an embodiment of the present invention is charaterized by a light receiving cell including a transistor, for accumulating electric charges created in response to light energy striking the control region and then for producing a signal from a main region based on the accumulated carriers, the transistor having the control region and the main region which are formed in a semiconductor substrate of a first conductivity-type, the control region being formed of a second conductivity-type opposite to the first conductivity-type, the main region being formed of a semiconductor of the first conductivity-type, whereby current through the main region is controlled by varying the size of a depletion layer defined between the control region and the main region by a potential of the control region; a memory cell corresponding to the light receiving cell, and including a memory transistor, to accumulate a signal transferred from the light receiving cell into a control region of the memory transistor; and a signal line for electrically connecting the main region for the light receiving cell and the main region for the memory cell. The memory transistor may be a transistor where the current flowing through the main region is adjusted by controlling the volume of the depletion layer defined between the control region and the main region with a potential applied to the control region. However, this does not mean that the memory transistors must be formed of the same type as the transistors in the light receiving cell. For example, SIT elements may be used as the light receiving cell and FETs may be used as the memory cell, or vice versa. In an embodiment of the present invention the memory cells include the same type of transistor as the light receiving cell, and the memory cells each accumulates a signal transferred from the light receiving cell into the control region of the same-type transistor. The shift in the accumulation start timing of each row line associated with the light receiving cells can be minimized by transferring signals from the light receiving cells to the memory cells of each row line, so as to write the cells of a row in one operation. The shielded memory cell, made of a transistor that can read out a stored signal non-destructively, can read out the same signal several times. According to an embodiment of the present invention, the solid-state image pickup device has; plural photoelectric conversion pixels each of which accumulates electric charges created due to the energy of received light and amplifies electric charges, arranged in a matrix form ; a transistor having a control region coupled capacitively to the output side of, each of the photoelectric conversion pixels; and a switch for switching the control region to a predetermined potential or an electrically-floated state, whereby a pixel signal is output from a main electrode of the transistor. As shown in Fig. 5, the switch SW sets the base potential (the potential of one electrode of the capacitor C connected to the base) of the bipolar transistor Tr to V 1 while the image output V N , not including a light signal such as from an LED light, is input from the photoelectric conversion pixel (S) to the other electrode of the capacitor C. In this case, the potential at the other electrode of the capacitor C is V N and the base potential (the potential of the electrode of the capacitor C connected to the base side) is V 1 . Next, when the switch SW places the electrode of the capacitor C on the base connection side in an electrically floating state, the pixel output V N+S , including the light signal, is input from the photoelectric conversion pixel (S) to the other electrode of the capacitor C. At this time, the potential at the other electrode of the capacitor C changes from V N to V N+S while the base potential changes from V 1 to (V 1 +V N+S -V N ). Thus the signal based on the light signal component (V N+S -V N ) can be output from the emitter, or the main electrode, of the bipolar transistor Tr. As a result, there are no signal variations due to the light receiving pixel and the bipolar transistor. The sensor output with high S/N ratio can be obtained without increasing the sensing area, by subtracting an external light signal. The other electrode of the capacitor C may be reset (to a potential V 2 ) after the electrode of the capacitor C connected to the base has been electrically floated. In this case, the potential of the other electrode of the capacitor C changes from V N to V 2 while the potential of the electrode of the capacitor C connected to the base changes from V 1 to (V 2 -V N +V 1 ). When the pixel output V N+S is input to the other electrode of the capacitor C, the potential of the other electrode of the capacitor C changes from V 2 to V N+S while the base potential changes from (V 2 -V N +V 1 ) to (V N+S -V N +V 1 ). Similarly, a signal based on the light signal component (V N+S -V N ) can be outputt from the emitter of the bipolar transistor Tr. As shown in Fig. 6, the pixel output V N , not tincluding a light signal such as LED light, is temporarily accumulated into the signal accumulation pixel M. Thereafter, when the switch SW 1 sets the base potential of the bipolar transistor Tr to V1, the output V N is output from the signal accumulation pixel M to the other electrode of the capacitor C through the switch SW 2 . Then, when the base of the bipolar transistor Tr is placed in an electrically floating state and the potential of the other electrode of the capacitor C has been reset to V 2 , the output V N+S including the light signal is outputted from the photoelectric conversion pixel. Thus, a signal based on (V N+S -V N ) is output from the emitter of the bipolar transistor Tr and then is again accumulated into the signal accumulation pixel M. This operation allows the sensor output with high S/N ratio to be obtained by subtracting noise due to variations in the light receiving pixel, the bipolar transistor Tr and the accumulation pixel, and external light components. As shown in Fig. 7, twice as many signal accumulation pixels M1, M2 are provided as the number of photoelectric conversion pixel S. The pixel output V N , not including a light signal such as LED light, is accumulated into the signal accumulation pixel M1 through the bipolar transistor Tr. The pixel output V N+S , including a light signal, is accumulated into the signal accumulation pixel M2 through the bipolar transistor Tr. The subtracting process is performed after reading the pixel output V N from the signal accumulation pixel M1 and the pixel output V N+S from the signal accumulation pixel M2 so that the signal based on the light signal component (V N+S -V N ) can be output. Other objects and features of the present invention will be apparent with reference to the following specification and the attached drawings. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic circuit diagram showing the configuration of a known solid-state image pickup device; Fig. 2 is a plan view showing the configuration of a known solid-state image pickup device; Fig. 3 is a cross sectional view showing the configuration of a known solid-state image pickup device; Fig. 4 is a pulse timing chart showing the operation of a known solid-state image pickup device; Fig. 5 is a diagram explaining the function of the solid-state image pickup device according to the first embodiment of the present invention; Fig. 6 is a diagram explaining the function of the solid-state image pickup device according to the first embodiment of the present invention; Fig. 7 is a diagram explaining the function of the solid-state image pickup device according to the first embodiment of the present invention; Fig. 8 is a schematic circuit diagram showing an solid-state image pickup device which is not an embodiment of the present invention; Fig. 9 is a pulse timing chart showing the operation of the solid-state image pickup device of Fig. 8; Fig. 10 is a schematic circuit diagram showing a solid-state image pickup device which is not an embodiment; Fig. 11 is a schematic circuit diagram showing the solid-state image pickup device according to the first and second embodiments of the present invention; Fig. 12 is a pulse timing chart used for explaining the operation of the solid-state image pickup device shown in Fig. 11; Fig. 13 is a schematic circuit diagram showing the solid-state image pickup device according to the third embodiment of the present invention; Fig. 14 is a pulse timing chart showing the pulse w input to the solid-state image pickup device shown in Fig. 13; and Fig. 15 is a schematic circuit diagram showing partially the solid-state image pickup device according to the sixth embodiment of the present invention. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of the present invention will be explained below with reference to the attached drawings. First, Figs. 8 to 10 will be explained. These show arrangements which do not embody the present invention, but which help to show how the read timing offset in Fig.1 can be reduced by use of a memory. Fig. 8 is a schematic circuit diagram showing a solid-state image pickup device. Since the system configuration of the sensor cell (light receiving cell) is similar to that shown in Fig. 1, the duplicate explanation on the elements with same numerals will be omitted. For the simplified explanation, a 2x2 pixel structure formed of sensor cells and memory cells is shown here. Referring now to Fig. 8, the memory cells 53-11, 53-12, 53-21, and 53-22 receive the outputs from the sensor cells 21-11, 21-12, 21-21, and 21-22, respectively. The memory cells have the same structure as the sensor cells. Numerals 50-1 to 50-2 represent row drive lines to which the vertical shift register 52 outputs respective drive signals ; 51 represents the gate line of a MOS transistor that resets the bases of the memory cells 53-11 to 53-22; c1 represents a reset pulse for the memory cells 53-11 to 53-22; 54 represents a MOS transistor connected to vertical output lines (column lines) 28-1 and 28-2; and 55 represents a load resistor connected to each column line. Fig. 9 is a timing chart showing the operation of transferring a signal from a sensor unit to a memory unit and of reading a signal out of the memory unit. Referring to Fig. 9, the MOS transistors 54 are turned ON in response to a high level of the pulse Ø VC to connect the load resistor 55 to the vertical output lines 28-1 and 28-2, respectively. The potential of the gate electrode in the memory cell is set to a higher value than the pulse  C1 . In this case, the intermediate level of the pulse  G1 causes the reading operation from the sensor cell, with a reverse bias applied between the source and the gate. At the same time, with a high level of the row drive line 50-1 and a reverse bias applied between the gate and the source, the gate of the memory unit is boosted to a fixed amount higher than the source follower potential determined by the sensor cell and the load resistor 55 so that a sensor signal is transferred to the gate of the memory cell. Next, after the signal transfer has been performed on the second row line, the row drive lines 50-1 and 50-2 are sequentially set to a middle level and the column selection transistors 29-1 and 29-2, which are controlled by the horizontal shift register 32, are sequentially turned on, with the reverse bias applied between the source and the gate, so that a reading operation is carried out through the resistor 31. In the above-operation, for each row the signal transfer is done at the same time to all the cells, so that the signal reading operation from the sensor cells can be carried out in a shorter time, compared with the known example shown in Figs. 1 to 4 where the cells are sequentially scanned for each selected row line to perform a signal reading operation. The offset in the accumulation timing of each row in the sensor unit is small. The use of a memory shielded against light can prevent a signal from being distorted even if a bit-by-bit transfer from the memory unit is slow. Fig. 10 shows a second arrangement of the solid-state image pickup device using a memory. In this figure, junction-type FETs are used as transistors forming sensor cells and memory cells. The operation resembles that of Fig. 8. In Fig. 10, like numerals are attached to like structural members shown in Fig. 8. Referring to Fig. 10, as in Fig. 8, the light receiving cell reading operation is performed with the gate of a FET reverse biased. The FET in a cell and the resistor 55 makes a source follower. The memory unit is written by applying the gate potential so as to reverse bias the junction between the gate and the source. Unlike the SIT, since the FET has a saturation current characteristic, the linearity of the source follower output to the amount of the signal electric charges is near to 1.0, whereby the photoelectric conversion characteristic for the light sensor can be improved. The SIT is a transistor having a short channel length but the FET can be manufactured with a long channel length. Hence, the variation in output due to a variation in cell structure can be minimized. As described above, this type of arrangement includes a transistor forming a light receiving cell, and a memory cell (including a memory transistor corresponding to the light receiving transistor) for accumulating a signal transferred from the light receiving cell into the control electrode region of the memory transistor. Signals are transferred and written simultaneously from the light receiving cells to the memory cells associated with a row line so that the shift of the accumulation start timing of each row in the sensor unit can be suppressed to a small value. If a transistor that can read non-destructively a signal to a light shielded memory cell is used, the same signal can be read out of the memory several times. Moreover, the signal electric charge transferred is amplified by making the capacitance of the control electrode region of the memory cell larger than that of the light receiving cell. This feature can suppress to a small value the S/N ratio decline due to the noise component such as dark current induced in the memory unit. Next, explanation will be made as for the first embodiment of the present invention with reference to the drawings. Fig. 11 is a schematic circuit diagram showing the solid-state image pickup device according to the first embodiment of the present invention. In this figure, numeral 1 represents a bipolar transistor (constructing an optical sensor); 2 represents a capacitor which controls the base potential of the bipolar transistor 1; and 3 represents a p-MOS transistor which resets the base potential of the bipolar transistor 1. An imaging pixel acting as a unit is formed of the bipolar transistor 1, the capacitor 2, and the p-MOS transistor 3. Numeral 4 represents a vertical output line; 5 represents a horizontal drive line; 6 represents a MOS transistor which resets the vertical output line 4; 11 represents a buffer MOS transistor which is selected by the vertical shift register I to apply a drive pulse  R to a pixel; 15 represents a terminal which applies the sensor drive pulse  R to the horizontal drive line 5 through the buffer MOS transistor 11; 133 represents an emitter follower; 134 represents a p-MOS transistor; 135 represents a terminal which applies a pulse to the gate of the p-MOS transistor 134; and 136 represents a terminal connected to a positive power source. Furthermore, numeral 137 represents a capacitor which capacitively couples the vertical output line 4 to the base of a bipolar transistor 129; 138 represents a switching MOS transistor which fixes the base of the bipolar transistor 129 to a predetermined potential; 139 represents a terminal which applies a pulse to the gate of the switching MOS transistor 138; 140 represents a positive power source which specifies the drain voltage of the p-MOS transistor 138; 141 represents a MOS transistor which connects the emitter of the bipolar transistor 129 to a vertical output line 124; 142 represents a terminal which applies a pulse to the gate of the MOS transistor 141; 143 represents a MOS transistor which connects the vertical output line 4 to the vertical output line 124; 144 represents a terminal which applies a pulse to the gate of the MOS transistor 143; 126 represents a MOS transistor which sets the vertical output line 4 to a predetermined potential; 127 represents a terminal which applies a pulse to the gate of the MOS transistor 126; 128 represents a positive power source terminal which specifies the drain voltage of the MOS transistor 126 ; 131 represents a MOS transistor which resets the emitter of the bipolar transistor 129 and the vertical output line 124; and 132 represents a terminal which applies a pulse to the gate of the MOS transistor 131. Numeral 121 represents a bipolar transistor; 122 represents a capacitor which controls the base potential of the bipolar transistor 121; and 123 represents a p-MOS transistor which resets the base potential of the bipolar transistor 121. An accumulating pixel unit is formed of the bipolar transistor 121, the capacitor 122, and the p-MOS transistor 123. Numeral 124 represents a vertical output line; 125 represents a horizontal drive line; 17 represents a buffer MOS transistor which is selected by the vertical shift register II to apply a pulse w to a pixel; 18 represents a terminal which applies the pulse  w to the horizontal drive line 125 through the buffer MOS transistor 17; 145 represents an emitter follower which clamps the accumulating pixel; 146 represents p-MOS transistor which connects the base of the emitter follower 145 to the power source terminal 136; and 147 represents a terminal which applies a pulse to the gate of the p-MOS transistor 146. Furthermore, numeral 7 represents a capacitor which accumulates the output signal from the accumulating pixel; 8 represents a MOS transistor which connects the an accumulating pixel to the capacitor 7; 14 represents a terminal which applies a pulse to the base of the MOS transistor 8; 9 represents a horizontal output line; 10 represents a MOS transistor which transfers the output from the capacitor 7 to the horizontal output line 9; 12 represents a pre-amplifier which produces a sensor output; and 16 represents a sensor output terminal. The operation of the solid-state pickup device shown in Fig. 11 will be explained with reference to the timing chart shown in Fig. 12. According to the present embodiment, the operation is characterized in that the difference signal created based on the external light signal at an LED-OFF time and the signal at an LED-ON time is accumulated to an accumulating pixel. The accumulating operation at LED-OFF time, clamp and reset operations are performed as follows: When a pulse at a low level is applied to the terminals 135 and 147, the bases of the emitter follower circuits 133 and 145 are fixed to the positive potential of the power source terminal 136 so that the peripheral source region of the p-MOS transistor which forms an imaging pixel and an accumulating pixel becomes a positive potential. As a result, all the p-MOS transistors 3 and 123 become conductive, and the bases of all the bipolar transistors 1 and 121 are set to the same potential as the output from the emitter follower circuits 133 and 145. Next, when a pulse at a high level is applied to the terminals 13 and 132, all the emitters connected to the vertical output lines 4 and 124 are grounded so that the base potentials of the bipolar transistors 1 and 121 are lowered to about V BE or about 0.6 volts. This procedure is called a clamping operation. As described above, the above-configuration performs the clamping operations of the imaging unit and the accumulating unit. At this time, the MOS transistors 138 and 143 are in an off state and the MOS transistor 141 is in an on state. Next, a pulse at a high level is applied to the terminal 127 and the vertical output line 4 is fixed at the power source potential of the power source 128, and a pulse at a high level is applied to the terminal 15, so that a horizontal drive line 5 selected by the vertical shift register I is at a high level. Then, the base potential of the bipolar transistor 1 associated with the selected line is boosted in a positive direction through the capacitive coupling of the capacitor 2. However, since the emitter potential is fixed to the power source potential of the power source 128, the base potential drops to a certain fixed level due to the base current. When the pulse applied to the terminal 15 becomes a low level, the base potential is decreased lower than the emitter potential because of the capacitive coupling through the capacitor 2, whereby a photo carrier accumulation begins. This sequential procedure is called a resetting operation. This resetting operation is performed on a row sequentially selected by the vertical shift register I. The accumulating operation starts at the time the resetting operation is over and then a signal is accumulated into the base of the bipolar transistor 1. After the accumulating operation in the imaging portion, the signal transferring operation is carried out from the imaging portion to the accumulating portion. In order to read the signal from the imaging portion, the MOS transistor 131 is turned on while a brief negative pulse is applied to the terminal 139. Thus the base potential of the bipolar transistor 129 is fixed to a certain voltage and then set in a floating state. Next, the vertical shift register I sequentially sets the horizontal drive lines 5 to a high level to boost positively the base potential of the bipolar transistor 1, thus making the emitter current flow. When the emitter potential of the bipolar transistor 1 rises, the base potential of the bipolar transistor 129 rises through the capacitive coupling of the capacitor 137. Then, the emitter follower formed of the bipolar transistor 129 and the MOS transistor 131 (as a load) writes the output into the accumulation pixel through the MOS transistor 141. In the writing operation to an accumulation pixel, the vertical shift register II sequentially applies the pulse w to the horizontal drive lines 125. The pulse w applied to the terminal 18 to transfer signals can be set to a high level, a low level, and a middle level. The pulse w is set to the middle level while the pulse  R is set to a high level, and electric charge corresponding to the charge accumulated into a pixel of the imaging portion at the LED-OFF time is stored into the accumulation pixel. Next, the clamping and resetting operations and the accumulating operations at an LED-ON time are similar to those described above. Since these operations are applicable only to the light receiving portion, the terminal 147 remains the high level. Next, the difference signal transfer which is the feature of the third embodiment of the present invention is done. First, when a low pulse is input to the terminals 139 and 142, a middle pulse is input to the terminal 18, and a high pulse is input to the terminal 144, the output of the accumulation pixel appears on the vertical output line 4 via the MOS transistor 143. The base of the bipolar transistor 129 is fixed to the potential of the power source terminal 140 and then set in a floating state. Next, when the vertical output line 4 is reset to a predetermined potential by applying a high pulse to the terminal 127, the base potential of the bipolar transistor 129 drops by the voltage decrease of the vertical output line 4, due to the capacitive coupling of the capacitor 137. That is, the inverted output voltage of the signal at the LED-OFF time appears on the base of the bipolar transistor 129. In this state, when a high level pulse is input to the terminals 15 and 18, the output potential of a image pixel, or the signal at the LED-ON time, is added to the base potential of the bipolar transistor 129. Hence, the difference signal outputs, which is obtained by subtracting an external light signal component from the LED-ON signal, appears on the base of the bipolar transistor 129. The output from the emitter follower formed of the bipolar transistor 129 and the MOS transistor 131 is written into the accumulation pixel through the MOS transistor 141. When the signal amount of the LED light is larger than that of the external light, the potential of the vertical output line 124 at the second writing time is higher, compared with the first transfer writing time. However, the bipolar transistor 121 can be sufficiently forward biased even at the second writing time by raising the level of the pulse w to the terminal 18. After the difference signal has been transferred and stored into the accumulation portion, the signal is read out of the accumulation portion by boosting positively the base potential of the bipolar transistor 121, with the horizontal drive line 125 set at a high level, and thus making the emitter current flow. Thereafter, the horizontal shift register transfers the signals of the capacitors 7 to the horizontal output line 9 and then outputs them from the sensor output terminal 16 via the pre-amplifier 12. Through the operation described above, the difference potential which is obtained by subtracting the first accumulation output from the light receiving portion (imaging portion) from the second accumulation output in the light receiving portion can be written into the accumulation pixel. The output of the accumulation pixel stored through the first writing operation includes F.P.N. (fixed pattern noise) from each of the light receiving pixel (imaging portion), the bipolar transistor 129, and the accumulation pixel, and an external light signal. Finally, the difference output is read as a signal with high S/N ratio out of the accumulation pixel because all these noise components are removed. According to the solid-state image pickup device of the second embodiment of the present invention, the noise due to the sensor is removed by a subtraction process, but removing the noise due to external light is not proposed. This embodiment also uses the sensor circuit shown in Fig. 11. In operation, the process of the first clamping and resetting operations are similar to those shown in Fig. 12. Next, without performing the accumulation operation, the pixel output from the light receiving portion (imaging portion) immediately after the resetting operation is transferred and written to the accumulation pixel. Next, the light receiving pixel is subjected to an accumulation operation without any other operation and then the difference potential is transferred. Like the first embodiment, the output read out of the accumulation pixel does not include F.P.N. of each of the light receiving portion pixel, the emitter follower associated with each column line, and the accumulation pixel. Moreover, the reset random noise of the light receiving pixel is also removed by subtracting the outputs obtained after the same resetting operation. The solid-state image pickup device according to the third embodiment of the present invention will be explained with reference to Fig. 13. Referring to Fig. 13, the power source terminal 148 is connected directly to the drain of the p-MOS transistor for each accumulation pixel to determine the clamp level of the base of the accumulation pixel. In this figure, like numerals are attached to the same elements as those shown in Fig. 11. Hence, the duplicate explanation will be omitted here. The sequential operations of the sensor is substantially the same as those of the first and second embodiments according to the present invention. In this embodiment, the terminal 147 used for the operation shown in Fig. 12 can be omitted. The operation of the present embodiment differs from the operation shown in Fig. 12 in the manner in which the pulse w is applied to the terminal 18. The operational difference will now be explained with reference to Fig. 14. The pulse w has three potentials: a low level at which the p-MOS transistor 123 is turned on, a middle level at which the p-MOS transistor 123 is turned off, and a high level. The pulse w is normally at a middle level. The accumulation pixel is first clamped with a low pulse and the first signal transfer is done with a high level. In the difference signal transferring, after the accumulation pixel output is output to the capacitor 137 using the high pulse, it is clamped with the low pulse. Next, the difference signal is written with the high level pulse. This circuit configuration can omit the emitter follower that switches the accumulation pixel clamping power source, thus providing a simple operation. The solid-state image pickup device of the fourth embodiment according to the present invention relates to the bipolar transistor forming an emitter follower connected to each column line. As shown in Figs. 11 and 13, the emitter follower is formed of the bipolar transistor 129 and the MOS transistor 131. Since the bipolar transistor 129 operates with its base in a floating state, the base potential decreases during the operation of the emitter follower. In this embodiment, as shown in Fig. 15, a Darlington-type bipolar transistor 149 is substituted for the bipolar transistor. This circuit configuration can sufficiently suppress the drop in the base potential during the operation of the emitter follower, thus decreasing the attenuation of the transfer signal. As described above, according to the embodiments, an operation can be realised by which F.P.N. of the sensor, or, if necessary, the undesirable external light signal and the random noise of the sensor is subtracted. Furthermore, since the amplified signal can be stored in the accumulation portion, a sensor output with high S/N ratio can be obtained. Moreover, since the signal from the signal accumulation pixel (memory cell) is read non-destructively, it is possible to perform the reading operation several times. In the above-explanation, the bipolar transistor (with a base acting as a control electrode and an emitter or collector acting as a main electrode) has been preferably used as the transistor which is capacitively connected to the output of a photoelectric conversion pixel. However, the invention is not limited only to the use of a bipolar transistor, but field-effect transistors, for example, may be used in the embodiments. A pixel that includes a bipolar transistor storing a signal as a base potential has been used as a photoelectric conversion pixel or a signal accumulation pixel. However, in the present invention, the pixel should not be limited to the above-pixel structure. Any elements each acting as an amplification-type sensor can be preferably used as a pixel. Details of the construction of a bipolar type light sensitive transistor are given in, for example, EP-A-0132076.

Claims: A solid state image pickup device comprising: a sensor unit comprising a plurality of photoelectric conversion pixels (1, 2, 3) each of which accumulates charges created due to received light energy and produces an electric output signal, and noise removal means for removing noise from the electric output signals of the sensor unit, characterized by a memory unit connected to the sensor unit through the noise removal means, wherein the memory unit comprises a plurality of memory cells for storing signals output from the said photoelectric conversion pixels; a common output line (9) for signals read from the plurality of memory cells; and scanning means for sequentially reading signals out from the said memory cells to the common output line. A device according to claim 1 in which each of the photoelectric conversion pixels comprises amplifying means for outputting its electric output signal amplified from the accumulated charges. A device according to claim 2 in which the said amplifying means comprises a bipolar phototransistor. A device according to claim 2 in which the said amplifying means comprises a static induction phototransistor. A device according to claim 2 in which the said amplifying means comprises a field effect phototransistor. A device according to any one of the preceding claims in which the memory cell comprises amplifying means for amplifying and outputting the stored signal. A device according to claim 6 in which the amplifying means of the memory cell and the amplifying means of the photoelectric conversion pixels are formed with the same structure. A device according to any one of the preceding claims in which each memory cell comprises a transistor into which a said output signal from the noise removal means is written as a potential in the control region. A device according to any one of the preceding claims in which each memory cell comprises a memory transistor coupled to a photoelectric conversion pixel for transferring a photo-signal from the photoelectric conversion pixel to the control region of the memory transistor, the memory transistor being arranged to provide an output from a main electrode region corresponding to the charge stored on its control region. A device according to claim 9 in which the memory transistors are shielded from light. A device according to any one of the preceding claims further comprising a switch (SW2, 143) for connecting an output line for a said photoelectric conversion pixel to an output line for a said memory cell. A device according to any one of the preceding claims in which the memory unit is connected to store noise signals generated by the sensor unit and to output the stored noise signals to the noise removal means, whereby the noise signals received by the noise removal means include noise generated by the memory unit. A device according to any one of the preceding claims in which the memory unit is positioned offset sideways from the sensor unit. A device according to any one of the preceding claims in which the memory unit can perform a nondestructive read-out so as to be able to perform read-out of the same stored signal a plurality of times. A device according to any one of the preceding claims in which the noise removal means comprises, with respect to each of the photoelectric conversion pixels, (i) a transistor (129) having a control region capacitively coupled to the output of the photoelectric conversion pixel and providing output signals from a main region, and (ii) a switch (138) for switching the control region of the transistor to a predetermined potential or a floating state. A device according to claim 15 in which a plurality of photoelectric conversion pixels are arranged in a column and are capacitively coupled to the control region of a common said transistor of the noise removal means.

Inventors: SHINOHARA MAHITO, SHINOHARA, MAHITO, SHINOHARA, MAHITO, CANON K.K.
Applicants: CANON KK, CANON KABUSHIKI KAISHA
Application year: 1994
Main classification: H04N3
IPC codes: H04N3