Layered structure comprising insulator thin film and oxide superconductor thin film

Abstract: A layered structure formed on a substrate comprising a Ly₁Ba₂Cu₃O 7-δ (Ly means a lanthanoide or yttrium and 0<δ<1) oxide superconductor thin film deposited on the substrate and an insulator thin film of Ba z Sr 1-z TiO₃ (0≦z≦1) deposited on the Ly₁Ba₂Cu₃O 7-δ oxide superconductor thin film. The insulator thin film is formed of Ba z Sr 1-z TiO₃ (0<z≦1) at the bottom.

Description: Background of the Invention Field of the invention The present invention relates to a layered structure comprising an insulator thin film and an oxide superconductor thin film, more specifically, to a layered structure comprising an insulator thin film and an oxide superconductor thin film, of which a portion of the insulator thin film can be removed without degradation of the oxide superconductor thin film. Description of related art A superconducting field effect device has a superconducting channel electrically connecting a superconducting source and drain region and a gate electrode on the superconducting channel through a gate insulator. The superconducting field effect device is a voltage control type three-terminal superconducting device having current amplification ability, in which superconducting current flowing through the superconducting channel between the superconducting source and drain region is controlled by a signal voltage applied to the gate electrode. The superconducting field effect device can be manufactured by utilizing oxide superconductors, recently advanced in study, without severe fine processing conditions, so that it is considered to be favorably applicable for practical usage. This type of superconducting field devices are shown in U. S. Patent No. 5,236,896 by Nakamura et al. The superconducting field device disclosed by Nakamura et al. comprises a superconducting channel formed of an oxide superconductor thin film having a thickness of 5 nanometers and a gate insulator having a thickness of 10 nanometers which is enough to prevent tunnel current. The thickness of the superconducting channel and gate insulator are determined to perform complete ON/OFF operation by a signal voltage of several volts applied to a gate electrode. The superconducting field device also comprises a superconducting source region and a superconducting drain region formed of an oxide superconductor thin film having a thickness of a few hundreds nanometers which is enough to form contacts on them. In a prior art, the superconducting field effect device is manufactured by a process in which an oxide superconductor thin film which forms a superconducting channel, an insulator thin film and a normal conductor film are deposited in the named order. The normal conductor film and the insulator thin film are completely removed excluding portions which will be a gate electrode and a gate insulating layer. Oxide superconductor thin films are again deposited on the exposed surfaces of the first oxide superconductor thin film so as to form an additional superconducting source region and also superconducting drain region. In the above superconducting field effect device, in order to apply an electric field to the superconducting channel efficiently, the gate insulator should have a large enough value of electrostatic capacitance than that of the superconducting channel. For this purpose, the gate insulator is required to have the large dielectric constant ε. In addition, a larger voltage applied to the gate electrode can realize a thicker superconducting channel and gate insulator which relax fabrication conditions of the superconducting channel and gate insulator. For this purpose, the gate insulator should have a large breakdown voltage E BD and a boundary plane between the superconducting channel and gate insulator should be clear enough to prevent unnecessary interfacial energy. The superconducting channel is often formed of Y 1 Ba 2 Cu 3 O 7-x oxide superconductor, previously. In this case, the gate insulator is formed of SrTiO 3 , see for example EP-A-0 354 804. SrTiO 3 is a ferroelectric having large ε and breakdown voltage. The gate insulator of SrTiO 3 has a value of ε · E BD ≥ 10 8 V/cm. In addition, a clear boundary plane between a Y 1 Ba 2 Cu 3 O 7-x oxide superconductor thin filin and a SrTiO 3 thin film can be obtained by depositing a SrTiO 3 thin film successively on the Y 1 Ba 2 Cu 3 O 7-x oxide superconductor thin film by reactive co-evaporation under high vacuum, so as to reduce the interfacial energy. However, a field effect device utilizing Y 1 Ba 2 Cu 3 O 7-x oxide superconductor and SrTiO 3 manufactured by the above conventional process has large contact resistance between the superconducting channel and the additional superconducting source region and between the superconducting channel and the additional superconducting drain region so that it can not obtain required properties. The inventors' observation using X-ray Photoelectron Spectroscopy (XPS) makes it clear that a strontium contained amorphous layer covered the exposed surface of the Y 1 Ba 2 Cu 3 O 7-x oxide superconductor thin film after the removal of the SrTiO 3 thin film, which generates the large contact resistance. It is difficult to remove the strontium contained amorphous layer without degrading superconducting properties of the Y 1 Ba 2 Cu 3 O 7-x thin film. Summary of the Invention Accordingly, it is an object of the present invention to provide a layered structure comprising an insulator thin film and an oxide superconductor thin film, which have overcome the above mentioned defects of the conventional ones. The above and other objects of the present invention are achieved in accordance with the present invention by a layered structure formed on a substrate comprising a Ly 1 Ba 2 Cu 3 O 7-δ (Ly means a lanthanoide or yttrium and 0<δ<1) oxide superconductor thin film deposited on the substrate and an insulator thin film of Ba z Sr 1-z TiO 3 (0≤z≤1) deposited on the Ly 1 Ba 2 Cu 3 O 7-δ oxide superconductor thin film wherein the insulator thin film is formed of Ba z Sr 1-z TiO 3 (0<z≤1) at the bottom. If the insulator thin film of the layered structure in accordance with the present invention is removed, no strontium contained amorphous layer is remained on an exposed surface of the oxide superconductor thin film. Therefore, contact resistance becomes enough small, when another oxide superconductor thin film or a normal conductor thin film is deposited on the exposed surface of the oxide superconductor thin film. In the layered structure according to the present invention, the insulator thin film is preferably formed of Ba z Sr 1-z TiO 3 in which z is as close as possible to 1 at a portion near the oxide superconductor thin film in order to prevent strontium from producing strontium contained amorphous. However, in order to maintain dielectric properties, the insulator thin film preferably has a portion composed of Ba z Sr 1-z TiO 3 in which z is equal to or as close as possible to 0. Dielectric properties of Ba z Sr 1-z TiO 3 (0<z≤1) thin film is determined by deposition methods and deposition conditions. In addition, the dielectric constant, temperature dependency and applied electric field dependency of the dielectric constant of Ba z Sr 1-z TiO 3 (0<z≤1) are affected by its composition, namely suffix z. Therefore, Ba z Sr 1-z ,TiO 3 insulator thin films having different compositions (z) can be used for the insulator thin films so that each insulator thin film has different properties for each application and operating temperature. It is also possible to form the insulator thin film of stacked plural layers of Ba z Sr 1-z ,TiO 3 having different compositions. For example, although SrTiO 3 has the largest dielectric constant at a temperature lower than 60 K, it is possible to make Ba z Sr 1-z TiO 3 have the largest dielectric constant at a temperature approximate to 77 K by selecting an appropriate value of z. According to one preferable embodiment of the present invention, the insulator thin film is formed of Ba 0.4 Sr 0.6 TiO 3 . In another preferable embodiment, the insulator thin film is formed of a tri-layer consisting of a BaTiO 3 layer, a Ba 0.2 Sr 0.8 TiO 3 layer and a SrTiO 3 layer stacked in the named order. It is also preferable that the insulator thin film is formed of a Ba z Sr 1-z TiO 3 (0≤z≤1) gradient composition insulator film in which z is equal to 1 at the bottom and z is equal to 0 at the top. Preferably, the layered structure further comprising a buffer layer between the substrate and the superconductor thin film. The purpose of this buffer layer is to compensate lattice mismatch between the substrate and oxide superconductor and to prevent interdiffusion. For example, the buffer layer is formed of Pr 1 Ba 2 Cu 3 O 7-y oxide. Pr 1 Ba 2 Cu 3 O 7-y oxide has a crystal structure similar to that of Ly 1 Ba 2 Cu 3 O 7-δ (Ly means a lanthanoide or yttrium) oxide superconductor so that the buffer layer of Pr 1 Ba 2 Cu 3 O 7-y oxide can compensate lattice mismatch between the substrate and the Ly 1 Ba 2 Cu 3 O 7-δ oxide superconductor thin film. In addition, the buffer layer prevents interdiffusion between them. Even if constituent elements of Pr 1 Ba 2 Cu 3 O 7-y oxide buffer layer diffuse into the Ly 1 Ba 2 Cu 3 O 7-δ oxide superconductor thin film, properties of the oxide superconductor thin film are not affected. In a preferred embodiment, the oxide thin film is formed of a Y-Ba-Cu-O compound oxide superconductor material. In addition, the substrate can be formed of an insulating substrate, preferably an oxide single crystalline substrate such as MgO, SrTiO 3 , CdNdAlO 4 , etc. These substrate materials are very effective in forming or growing a crystalline film on them. The above and other objects, features and advantages of the present invention will be apparent from the following description of preferred embodiments of the invention with reference to the accompanying drawings. Brief Description of the Drawings Figure 1 is a diagrammatic sectional view of a film deposition apparatus which can be used for manufacturing the layered structure in accordance with the present invention; and Figures 2A to 2F are diagrammatic sectional views illustrating a process for manufacturing a structure which is used for proving advantage of the layered structure in accordance with the present invention. Description of the Preferred embodiments Referring to Figure 1 there is shown a diagrammatic sectional view of a film deposition apparatus which can be used for conducting the process in accordance with the present invention. This film deposition apparatus includes a vacuum chamber 21 provided with evacuating apparatuses 11 and 12, seven K cells 22 having controllable shutters 70 provided at the bottom of the vacuum chamber 21, and a sample holder 23 provided at the top of the vacuum chamber 21 for holding a substrate 6 on which a film is to be deposited. Shutters 70 and temperatures of the K cells 22 are independently controlled so that the amount of molecular beam flux of each material and deposition rate of compound films are independently controlled. The sample holder 23 is contacted to a heater 24 for heating the substrate and a thermocouple (not shown). A film thickness monitor 7 is provided near the sample holder 23. In addition, the vacuum chamber 21 also has an electron beam gun 25 of Reflecting High Energy Electron Diffraction (RHEED) measurement for observing roughness and crystallinity of a thin film even during the deposition. Though not shown, a liquid nitrogen shroud for cooling outer shells of the K cells 22. Additionally, a gas introducing nozzle 26 is provided so as to introduce an oxidizing gas such as O 2 , O 3 , NO 2 , N 2 O, etc. to the vicinity of the substrate 6 attached to the sample holder 23, so that the oxidizing gas can be supplied to form an oxygen-enriched atmosphere in the vicinity of the substrate 6 in order to oxidize metal molecular beams supplied from the evaporation sources in the course of the film deposition. Furthermore, the film deposition apparatus additionally includes a partitioning plate 8 for dividing the vacuum chamber 1 into a bottom sub-chamber which consists of a lower portion of the vacuum chamber defined below the partitioning plate 8, which has the K cells 22 and the main evacuating apparatus 12, and a top sub-chamber which consists of an upper portion of the vacuum chamber defined above the partitioning plate 8 and in which sample holder 23 is located. The partitioning plate 8 includes a round shape opening formed at a center thereof. The position of the opening is determined to ensure that molecular beams emitted from K cells toward the substrate 6 are not obstructed by the partitioning plate 8. In addition, the size of the opening is determined to enable restricted oxygen leakage from the top sub-chamber to the bottom sub-chamber so that a pressure difference can be created between these two sub-chambers. Therefore, the partitioning plate 8 having the round shape opening acts as a vacuum conductance. In addition , the evacuating apparatus 11 is connected to the top sub-chamber for evacuating the top sub-chamber to an ultra-high vacuum. The auxiliary evacuating apparatus 11 is constituted of a cryopump. On the other hand, the evacuating apparatus 12 is constituted of a diffusion or turbo pumps. Example 1 Referring to Figures 2A to 2F, a process for forming the layered structure in accordance with the present invention by using the apparatus shown in Figure 1 will be described. As shown in Figure 2A, an oxide buffer layer 2 of Pr 1 Ba 2 Cu 3 O 7-y (0<y<1) having a thickness of 30 nanometers was deposited on a SrTiO 3 (100) single crystalline substrate 6 by reactive co-evaporation method. At first, SrTiO 3 (100) substrate 6 was attached to the sample holder 23, and metal praseodymium, metal yttrium, metal barium, copper, metal strontium, metal titanium and Au were put into tantalum crucibles held within the seven K cells 20 used as evaporation sources. Thereafter, inlets of the chamber 1 were closed and evacuation process by the evacuating apparatuses 11 and 12 began to reach an ultra-high vacuum which obtained a pressure lower than 1.33·10 -8 Pa (1 × 10 -10 Torr), which was required to the background pressure during the film deposition by the MBE process. Succeedingly, an oxidizing gas of O 2 including more than 70 volume percent O 3 was supplied from the gas introducing nozzle 26 so that the oxidation gas partial pressure in the top sub-chamber became 6.66·10 -4 Pa (5 × 10 -6 Torr). As mentioned above, the vacuum chamber 1 was provided with the vacuum conductance (the partitioning plate 8), a pressure difference of about one digit or more was created between the bottom sub-chamber and the top sub-chamber. Oxidation gas partial pressure of the bottom sub-chamber was maintained low enough to prevent the evaporation sources from oxidization and to maintain the metal molecular beams from each evaporation source during the deposition. In addition, the oxidizing gas injected from the gas introducing nozzle 6 was supplied onto a specimen surface, the partial pressure of the oxidizing gas on the deposition plane of the specimen was maintained enough amount for the oxide film formation. Then, the substrate 6 was heated by the heater 4 to a temperature of 730 °C. The K cell 22 of metal praseodymium was heated to a temperature of 920 °C, the K cell 22 of metal barium was heated to a temperature of 620 °C and the K cell 22 of metal copper was heated to a temperature of 1000 °C. The temperatures of the K cells are determined by the amount of metal molecular beam fluxes requested by the arrangement of the apparatus and oxide composition. When molecular beams had reached to their stable operation, the shutters 70 were opened so as to start deposition of the Pr 1 Ba 2 Cu 3 O 7-y oxide thin film onto the substrate 6. At the same time, surface crystallinity of this deposited film was observed by the RHEED device. Then, all the shutters 70 of the K cells 22 were closed and the K cell 22 of metal yttrium was heated to a temperature of 1220 °C. At the same time, the substrate temperature was lowered to 700 °C. Other conditions were kept the same. When molecular beams had reached to their stable operation, again, the shutters 70 of the K cells 22 of yttrium, barium and copper were opened so as to start deposition of a Y 1 Ba 2 Cu 3 O 7-x (0<x<1) oxide superconductor thin film 1 onto the Pr 1 Ba 2 Cu 3 O 7-y oxide buffer layer 2, as shown Figure 2B. At the same time, surface crystallinity of this deposited film was observed by the RHEED device. Pr 1 Ba 2 Cu 3 O 7-y oxide has a crystal structure similar to that of Y 1 Ba 2 Cu 3 O 7-x oxide superconductor so that the oxide buffer layer 2 of Pr 1 Ba 2 Cu 3 O 7-y oxide moderates lattice mismatch between the SrTiO 3 substrate and the Y 1 Ba 2 Cu 3 O 7-x oxide superconductor thin film 1. In addition, the buffer layer 2 prevents interdiffusion between them. Even if constituent elements of Pr 1 Ba 2 Cu 3 O 7-y oxide buffer layer 2 diffuse into the Y 1 Ba 2 Cu 3 O 7-x oxide superconductor thin film 1, properties of the oxide superconductor thin film 1 are not affected. When the Y 1 Ba 2 Cu 3 O 7-x oxide superconductor thin film 1 was grown up to have a thickness of 10 nanometers, all the shutters 70 of the K cells 22 were closed and the K cell 22 of metal strontium was heated to a temperature of 520 °C and the K cell 22 of metal titanium was heated to a temperature of 1500 °C. The substrate temperature was lowered to 400 °C. Other conditions were kept the same. When molecular beams had reached to their stable operatioin, the shutters 70 of the K cells 22 of barium, strontium and titanium were opened so as to start deposition of the Ba 0.4 Sr 0.6 TiO 3 insulator thin film 4 having a thickness of 50 nanometers onto the Y 1 Ba 2 Cu 3 O 7-x oxide superconductor thin film 1, as shown in Figure 2C. In situ observation with the RHEED device made it clear that the Ba 0.4 Sr 0.6 TiO 3 insulator thin film 4 was deposited sequentially, which was formed of a Ba 0.4 Sr 0.6 TiO 3 single crystal, and had an uniform thickness. Then, all the shutters 70 were closed again and the K cell 22 of Au was heated to a temperature of 500 °C. At the same time, the oxidizing gas was stopped so that the chamber 21 was evacuated to a pressure of 4.0 · 10 -8 Pa (3 × 10- 10 Torr). After Au molecular beam had reached to its stable operation, the shutter 70 of the K cell 22 of Au was opened so as to start deposition of an Au layer 5 having a thickness of 200 nanometers onto a the Ba 0.4 Sr 0.6 TiO 3 insulator thin film 4 at a substrate temperature of 400 °C, and then the Au layer 5 is patterned to a gate electrode, as shown in Figure 2D. Thereafter, by using the Au layer 5 as a mask, exposed portions of the Ba 0.4 Sr 0.6 TiO 3 insulator thin film 4 was completely removed by ion milling using Ar ions so that the Y 1 Ba 2 Cu 3 O 7-x oxide superconductor thin film 1 was exposed, as shown in Figure 2E. The exposed surface of the Y 1 Ba 2 CU 3 O 7-x oxide superconductor thin film 1 was observed by XPS without exposing the sample to the air, so that it became clear that little strontium was remained on the exposed surface. This was considered that barium had a tendency to be entrapped in or to combine with Y 1 Ba 2 Cu 3 O 7-x oxide superconductor so as to prevent strontium from forming strontium contained amorphous. The entrapped barium did not affect on superconducting properties of the Y 1 Ba 2 Cu 3 O 7-x oxide superconductor. Then, another Y 1 Ba 2 Cu 3 O 7-x oxide superconductor thin film 3 having a thickness of 200 nanometers was deposited selectively on the exposed surface of the Y 1 Ba 2 Cu 3 O 7-x oxide superconductor thin film 1 by using a metal mask under the same condition as mentioned above, as shown in Figure 2F. The contact resistance between the Y 1 Ba 2 Cu 3 O 7-x oxide superconductor thin films 1 and 3 was measured by four-terminal method. The measured value of the contact resistance was lower than 10 -6 Ωcm 2 . In addition, a measured value of dielectric constant ε of the Ba 0.4 Sr 0.6 TiO 3 insulator thin film 4 was 200 at the room temperature. Therefore, it is favorable that the above structure is applied to a superconducting field effect device. Example 2 Another layered structure utilizing a tri-layer insulator film consisting of a BaTiO 3 thin film, a Ba 0.2 Sr 0.8 TiO 3 thin film and a SrTiO 3 thin film was manufactured by using the apparatus shown in Figure 1. At first, a Pr 1 Ba 2 Cu 3 O 7-y oxide buffer layer was deposited on a SrTiO 3 (100) substrate and a Y 1 Ba 2 CU 3 O 7-x , oxide superconductor thin film was deposited on the Pr 1 Ba 2 Cu 3 O 7-y oxide buffer layer. The thickness of the Pr 1 Ba 2 Cu 3 O 7-y oxide buffer layer and the Y 1 Ba 2 Cu 3 O 7-x oxide superconductor thin film were equal to those of Example 1. In addition, the conditions for depositing the thin films were also equal to those of Example 1. Thereafter, the temperature of the K cell of metal barium was kept 620 °C, the K cell of metal strontium was heated to a temperature of 540 °C and the K cell of metal titanium was heated to a temperature of 1500 °C. The substrate temperature was lowered to 400 °C. Other conditions were kept the same. When molecular beams had reached to their stable operation, the shutters of the K cells of barium and titanium were opened so as to start deposition of a BaTiO 3 thin film having a thickness of 20 nanometers onto the Y 1 Ba 2 Cu 3 O 7-x oxide superconductor thin film. In situ observation with the RHEED device made it clear that the BaTiO 3 thin film was deposited sequentially, which was formed of a BaTiO 3 single crystal, and had an uniform thickness. Then, all the conditions were kept the same and the shutter of the K cell of strontium was opened so as to deposit a Ba 0.2 Sr 0.8 TiO 3 thin film having a thickness of 20 namometers on the BaTiO 3 thin film. In situ observation with the RHEED device made it clear that the Ba 0.2 Sr 0.8 TiO 3 thin film was deposited sequentially, which was formed of a Ba 0.2 Sr 0.8 TiO 3 single crystal, and had an uniform thickness. Thereafter, the shutter of the K cell of barium was closed so as to deposit a SrTiO 3 thin film having a thickness of 20 nanometers on the Ba 0.2 Sr 0.8 TiO 3 thin film. The conditions were kept the same. In situ observation with the RHEED device made it clear that the SrTiO 3 thin film was deposited sequentially, which was formed of a SrTiO 3 single crystal, and had an uniform thickness. Then, all the shutters were closed again and the K cell of Au was heated to a temperature of 500 °C. At the same time, the oxidizing gas was stopped so that the chamber was evacuated to a pressure of 4.0·10 -8 Pa (3 × 10 -10 Torr). After Au molecular beam had reached to its stable operation, the shutter of the K cell of Au was opened so as to start deposition of an Au layer having a thickness of 200 nanometers onto the SrTiO 3 insulator thin film of the tri-layer insulator thin film at a substrate temperature of 400 °C, and then patterned to form a gate electrode. Thereafter, by using the Au layer as a mask, exposed portions of the tri-layer insulator thin film was completely removed by ion milling using Ar ions so that the Y 1 Ba 2 Cu 3 O 7-x oxide superconductor thin film was exposed. The exposed surface of the Y 1 Ba 2 CU 3 O 7-x oxide superconductor thin film was observed by XPS without exposing the sample to the air, so that it became clear that little strontium was detected on the exposed surface. Then, another Y 1 Ba 2 Cu 3 O 7-x oxide superconductor thin film having a thickness of 200 nanometers was selectively deposited on the exposed surface of the Y 1 Ba 2 Cu 3 O 7-x oxide superconductor thin film through a metal mask. The contact resistance between the Y 1 Ba 2 Cu 3 O 7-x oxide superconductor thin films was measured by four-terminal method. The measured value of the contact resistance was lower than 10 -6 Ωcm 2 . In addition, a measured value of equivalent dielectric constant ε of the tri-layer insulator thin film of BaTiO 3 thin film, Ba 0.2 Sr 0.8 TiO 3 thin film and SrTiO 3 thin film was 250 at the room temperature. Therefore, it is favorable that the above structure is applied to a superconducting field effect device. Example 3 Still another layered structure utilizing a Ba z Sr 1-z TiO 3 (0≤z≤1) gradient composition insulator film in which z was equal to 1 at the bottom and z was equal to 0 at the top was manufactured by using the apparatus shown in Figure 1. At first, a Pr 1 Ba 2 Cu 3 O 7-y oxide buffer layer was deposited on a SrTiO 3 (100) substrate and a Y 1 Ba 2 Cu 3 O 7-x oxide superconductor thin film was deposited on the Pr 1 Ba 2 Cu 3 O 7-y oxide buffer layer. The thickness of the Pr 1 Ba 2 Cu 3 O 7-y oxide buffer layer and the Y 1 Ba 2 Cu 3 O 7-x oxide superconductor thin film were equal to those of Examples 1 and 2. In addition, the conditions for depositing the thin films were also equal to those of Example 1 and 2. Thereafter, the temperature of the K cell of metal barium was kept 620 °C, the K cell of metal strontium was heated to a temperature of 520 °C and the K cell of metal titanium was heated to a temperature of 1500 °C. The substrate temperature was lowered to 400 °C. Other conditions were kept the same. When molecular beams had reached to their stable operation, the shutters of the K cells of barium and titanium were opened and closed changing their durations ratio to obtain desired composition ratio so as to start deposition of a Ba z Sr 1-z TiO 3 gradient composition insulator film having a thickness of 20 nanometers onto the Y 1 Ba 2 Cu 3 O 7-x oxide superconductor thin film. The Ba z Sr 1-z TiO 3 gradient composition insulator film had a composition of BaTiO 3 , namely z=1, at the bottom which was in contact with the Y 1 Ba 2 Cu 3 O 7-x oxide superconductor thin film and a composition of SrTiO 3 , namely z=0, at the top. In situ observation with the RHEED device made it clear that the Ba z Sr 1-z TiO 3 gradient composition thin film was deposited sequentially and had an uniform thickness. Then, all the shutters were closed again and the K cell of Au was heated to a temperature of 500 °C. At the same time, the oxidizing gas was stopped so that the chamber was evacuated to a pressure of 4,0 · 10 -8 Pa (3 × 10 -10 Torr). After Au molecular beam had reached to its stable operation, the shutter of the K cell of Au was opened so as to start deposition of an Au layer having a thickness of 200 nanometers onto the Ba z Sr 1-z TiO 3 gradient composition insulator thin film at a substrate temperature of 400 °C, and then patterned to a gate electrode. Thereafter, by using the Au layer as a mask, exposed portions of the Ba z Sr 1-z TiO 3 gradient composition insulator thin film was completely removed by ion milling using An ions so that the Y 1 Ba 2 Cu 3 O 7-x oxide superconductor thin film was exposed. The exposed surface of the Y 1 Ba 2 Cu 3 O 7-x oxide superconductor thin film was observed by XPS without exposing the sample to the air, so that it became clear that little strontium was remained on the exposed surface. Then, another Y 1 Ba 2 Cu 3 O 7-x oxide superconductor thin film having a thickness of 200 nanometers was selectively deposited on the exposed surface of the Y 1 Ba 2 Cu 3 O 7-x oxide superconductor thin film by using a metal mask. The contact resistance between the Y 1 Ba 2 Cu 3 O 7-x oxide superconductor thin films was measured by four-terminal method. The measured value of the contact resistance was lower than 10 -6 Ωcm 2 . In addition, a measured value of dielectric constant ε of the Ba z Sr 1-z TiO 3 gradient composition insulator thin film was 300 at the room temperature. Therefore, it is favorable that the above structure is applied to a superconducting field effect device. In the above processes, if the seven K cells can not be set in one chamber, it is possible to use an apparatus comprising equal to or more than two chambers and in situ sample transfer device connecting the chambers. Furthermore, the oxide superconductor thin film can be formed of a high-T c (high critical temperature) oxide superconductor material, particularly a high-T c copper-oxide type compound oxide superconductor material, for example a Ln-Ba-Cu-O (Ln means a lanthanoide) compound oxide superconductor materials such as Er 1 Ba 2 Cu 3 O 7-v (0<v<1) oxide superconductor material, Ce 1 Ba 2 Cu 3 O 7-w (0<w<1) oxide superconductor material, etc. other than Y 1 Ba 2 Cu 3 O 7-x oxide superconductor material. The substrate can be formed of for example, an insulator substrate such as a MgO (100) substrate, a SrTiO 3 (100) substrate, a CdNdAlO 4 (001) substrate or others. The invention has thus been shown and described with reference to the specific embodiments. However, it should be noted that the present invention is in no way limited to the details of the illustrated structures but converts and modifications may be made within the scope of the appended claims.

Claims: A layered structure formed on a substrate (6) comprising a Ly 1 Ba 2 Cu 3 O 7-δ wherein Ly means a lanthanoide or yttrium and 0<δ<1 oxide superconductor thin film (1) deposited on the substrate and an insulator thin film (4) of a Ba z Sr 1-z TiO 3 with 0≤z≤1 composition deposited on the Ly 1 Ba 2 Cu 3 O 7-δ oxide superconductor thin film wherein the insulator thin film has a portion of a Ba z Sr 1-z TiO 3 with 0<z≤1 composition formed at its bottom adjacent oxide superconductor thin film. A layered structure as claimed in Claim 1, wherein the insulator thin film (4) is formed of Ba 0.4 Sr 0.6 TiO 3 . A layered structure as claimed in Claim 1, wherein the insulator thin film (4) is formed of a tri-layer consisting of a BaTiO 3 layer, a Ba 0.2 Sr 0.8 TiO 3 layer and a SrTiO 3 layer stacked in the named order. A layered structure as claimed in Claim 1, wherein the insulator thin film (4) is formed of a Ba z Sr 1-z TiO 3 with 0≤z≤1 gradient composition insulator film in which z is equal to 1 at its bottom and z is equal to 0 at its top. A layered structure as claimed in Claim 1, wherein the layered structure further comprises a buffer layer (2) between the substrate (6) and the superconductor thin film (1). A layered structure as claimed in Claim 5, wherein the the buffer layer (2) is formed of Pr 1 Ba 2 Cu 3 O 7-x . A layered structure as claimed in Claim 1, wherein the layered structure further comprises a normal conductor layer (5) deposited on the insulator thin film (4). A layered structure as claimed in Claim 1, wherein the oxide superconductor thin film (1) is formed of a Y-Ba-Cu-O compound oxide superconductor material. A layered structure as claimed in Claim 1, wherein the substrate (6) is formed of an insulator. A layered structure as claimed in Claim 9, wherein the substrate (6) is formed of a material selected from the group consisting of a MgO (100) substrate, a SrTiO 3 (100) substrate and a CdNdAlO 4 (001) substrate. A layered structure as claimed in Claim 7, wherein the layered structure is applied to a gate structure of a superconducting field effect device comprising a superconducting channel of an oxide superconductor and a gate electrode arranged on the superconducting channel through a gate insulator layer.

Inventors: IIYAMA MICHITOMO, TOKUDA HITOKI, IIYAMA, MICHITOMO, TOKUDA, HITOKI, IIYAMA, MICHITOMO, C/O OSAKA WORKS, TOKUDA, HITOKI, C/O OSAKA WORKS
Applicants: SUMITOMO ELECTRIC INDUSTRIES, SUMITOMO ELECTRIC INDUSTRIES, LIMITED
Application year: 1994
Main classification: H01L39
IPC codes: H01L39, H01B3, H01B17, C23C14, C01G1, C01G23, C01G3