Surface acoustic wave device and method for manufacturing the same

Abstract: A surface acoustic wave device of the present invention comprises a hard layer comprising diamond or a diamond-like carbon film, and a piezoelectric layer formed on the hard layer. It further comprises a pair of a interdigital transducer and a grounding electrode, which perform an electro-mechanical conversion, placed with the piezoelectric layer between. Then, the feature of the present invention is to form the grounding electrode of a conductive oxide. It is preferred that the conductive oxide is formed by doping an impurity into piezoelectric material of ZnO, namely. Therefore, the adhesive between the piezoelectric layer and the hard layer, and the grounding electrodes is increased, so that the yielding of device is enhanced, and further, the high electromechanical coupling coefficient can be obtained in a high frequency range.

Description: BACKGROUND OF THE INVENTION Field of the Invention The present invention relates to a surface acoustic wave device which operates in a high-frequency range including several hundreds of MHz to GHz and more particularly to the surface acoustic wave device which comprises diamond or a diamond-like carbon film and a piezoelectric body and a method for manufacturing the same. Related Background Art A surface acoustic wave device is an electro-mechanical conversion device utilizing a surface wave propagating on the surface of an elastic body and has a basic structure shown in Fig. 1. In a surface acoustic wave device 40, the piezoelectric phenomenon of a piezoelectric body 44 is used in exciting a surface acoustic wave. When an electrical signal is applied to one interdigital transducer (comb-like electrode) 43 formed on the piezoelectric body 44, the piezoelectric body 44 is stressed, and this stress becomes a surface acoustic wave. Then, the surface acoustic wave propagates on the piezoelectric body 44 and is extracted as an electrical signal at the other interdigital transducer 43'. The frequency characteristics of the surface acoustic wave device include band passing characteristic with a center frequency f 0 which is defined by f 0 = V/λ 0 , where V is a propagation velocity of the surface acoustic wave and λ 0 is a space between each of the electrodes of the interdigital transducer. The surface acoustic wave device requires a small number of parts and can be miniaturized. In addition, signals can be easily taken in and out on a surface acoustic wave propagation path. This device can be used in a variety of applications such as a filter, a delay line, an oscillator, a resonator, a convolver, or a correlator. In particular, the surface acoustic wave device has been used as an IF television filter. Such surface acoustic wave devices have also been tested as filters for VTRs and various communication apparatus such as a car telephone, a cellular phone and so on. A typical conventional surface acoustic device is a device having a structure in which interdigital transducers are formed on a crystalline piezoelectric body such as LiNbO 3 or LiTaO 3 . Another surface acoustic wave device having a piezoelectric thin film of ZnO or others sputtered on a base substrate of glass or others is used. It is, however, difficult to manufacture a device operating in a high-frequency (GHz band) range using the conventional device structure described above. A device in which interdigital transducers are formed on a single crystalline piezoelectric body without any other consideration cannot have a high center frequency in excess of 1GHz because its surface acoustic wave propagation velocity V is low. As indicated by the above equation, in order to achieve the surface acoustic wave device having band passing characteristics with a higher center frequency, a space λ 0 between each of the electrodes has to be smaller or the surface acoustic wave propagation velocity V has to be increased. Decreasing in a space λ 0 between each of the electrodes to increase the center frequency is limited by microlithography techniques such as photolithography. For this reason, various techniques for increasing the propagation velocity V of the surface acoustic wave have been examined. A device in which a sapphire layer having a larger propagation velocity of the surface acoustic wave than that of the piezoelectric body is placed between a base substrate and a piezoelectric layer is disclosed in Japanese Patent Laid-Open No. 54-38874(38874/1979). Further, a device in which a piezoelectric layer is deposited on a diamond layer in order to increase a propagation velocity of the surface acoustic wave is disclosed in Japanese Patent Laid-Open No. 64-62911(62911/1989) by Imai and others and Japanese Patent Laid-Open No. 3-198412(198412/1991) by Nakahata and others. Fig. 2-Fig. 5 show the devices disclosed in these reference. In a device shown in Fig. 2, a piezoelectric layer 54 is formed on a diamond layer 52 and between these layer, interdigital transducers 53 are formed. In a device shown in Fig. 3, short circuiting electrodes 56 are placed on the piezoelectric layer 54 of the device shown in Fig. 2. In a device shown in Fig. 4, a piezoelectric layer 54 is formed on a diamond layer 52, and interdigital transducers 53 are placed on the piezoelectric layer 54. The device shown in Fig. 5 comprises the short circuiting electrodes 56 placed between the piezoelectric layer 54 and the diamond layer 52 of the device shown in Fig. 4. As described above, it has been known that placing the short circuiting electrodes 56 between the piezoelectric layer 54 and the diamond layer 52 in the surface acoustic wave device having such a structure shown in Fig. 4 can achieve a higher electromechanical coupling coefficient. However, if the surface acoustic wave device with such a structure is manufactured, yielding is lowered. SUMMARY OF THE INVENTION It is an object of the present invention to provide a surface acoustic wave device comprising the structure which can increase yielding of device and a method for manufacturing the same. Further, it is another object of the present invention to provide a surface acoustic wave device having a high electromechanical coupling coefficient in a high-frequency range and a method for manufacturing the same. The other objects and advantage of the present invention will be apparent in the following description. A surface acoustic wave device of the present invention comprises a hard layer comprising diamond as a composition component, a piezoelectric layer formed on the hard layer, a pair of interdigital electrodes, spaced apart, for performing electro-mechanical conversion, and a grounding electrode comprising a conductive oxide, placed corresponding the pair of interdigital electrodes. The pair of interdigital electrodes and the grounding electrode is formed with the piezoelectric layer between, and either the pair of interdigital electrodes or the grounding electrode is formed on the hard layer. Thus, the grounding electrode is formed of a conductive oxide, so that crystalline turbulence in interface between the grounding electrode and the hard layer or between the grounding electrode and the piezoelectric layer can be remarkably suppressed and the adhesive can be enhanced. Further, in order to increase the propagation velocity of the surface acoustic wave, it is preferred that the hard layer comprises diamond or a diamond-like carbon film. Further, from the viewpoint of suppressing a variation of device characteristics to a variation of temperature, especially a variation of propagation velocity of the surface acoustic wave together with protecting a central part of the device from external environment, it is preferred that a layer comprising dioxide silicon is formed on the piezoelectric layer. Moreover, from the viewpoint of enhancing the adhesive between the piezoelectric layer and the grounding electrode, it is preferred that a conductive oxide forming the grounding electrode is formed by doping an impurity into material constituting piezoelectric body. A method for manufacturing a surface acoustic wave device of the present invention comprises a step of forming a hard layer comprising diamond as a composition component on a base substrate, a step of forming a piezoelectric layer comprising a piezoelectric material, a step of forming a pair of interdigital electrodes, spaced apart, for performing electro-mechanical conversion, and a step of forming a grounding electrode in correspondence to said pair of interdigital electrodes comprising the conductive oxide. Further, it preferably comprises a step of forming a layer comprising dioxide silicon on both the piezoelectric layer and a pair of electrodes. The present invention will become more fully understood from the detailed description given hereinbelow and the accompanying drawings which are given by way of illustration only, and thus are not to be considered as limiting the present invention. Further scope of applicability of the present invention will become apparent from the detailed description given hereinafter. However, it should be understood that the detailed description and specific examples, while indicating preferred embodiments of the invention, are given by way of illustration only, since various changes and modifications within the scope of the invention as defined by the claims will become apparent to those skilled in the art from this detailed description. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a perspective view for illustrating the basic structure of a surface acoustic wave device. Fig. 2 is a sectional view showing an example of the structure of a surface acoustic wave device. Fig. 3 is a sectional view showing an example of the structure of a surface acoustic wave device. Fig. 4 is a sectional view showing an example of the structure of a surface acoustic wave device. Fig. 5 is a sectional view showing an example of the structure of a surface acoustic wave device. Fig. 6 is a plane view showing the configuration of a interdigital transducer. Fig. 7 is a plane view showing the configuration of a interdigital transducer. Fig. 8 is a sectional view showing an example of the structure of a surface acoustic wave device according to the present invention. Fig. 9 is a sectional view showing an example of the structure of a surface acoustic wave device according to the present invention. Fig. 10 is a sectional view showing an example of the structure of a surface acoustic wave device according to the present invention. Fig. 11 is a sectional view showing an example of the structure of a surface acoustic wave device according to the present invention. Fig. 12 is a sectional view showing an example of the structure of a surface acoustic wave device according to the present invention. Fig. 13 is a sectional view showing an example of the structure of a surface acoustic wave device according to the present invention. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A surface acoustic wave device according to the present invention will be explained more particularly prior to explaining the embodiments. A diamond-like carbon film which is a hard layer comprising diamond is called i-carbon. The diamond-like carbon film is found in the process of studies on deposition syntheses of diamond. The physical properties of the i-carbon have been examined and clarified by many of researchers. Although there is no theory which defines the diamond-like carbon film as one material, this film is apparently different from diamond or graphite and preferably has the following properties. The diamond-like carbon film: (1) is a composition consisting essentially of carbon and hydrogen and has a smaller number of hydrogen atoms than that of carbon atoms. (2) has amorphous crystalline state. (3) has larger hardness than that of at least a general metal. (4) is an electric insulator. (5) transmits light therethrough. Further, the diamond-like carbon film which has such a noncrystalline structure, crystalline diamond and graphite can be distinguished by Raman spectroscopic analysis disclosed in a reference below. Typical Raman spectrum is shown in Fig. 8, p. 47 of the reference. The sharp spectrum is seen at 1332 cm -1 for diamond and at 1580 cm -1 for graphite whereas the wide spectrum is seen at 1360 cm -1 and 1600 cm -1 for the diamond-like carbon film (noncrystalline structure). (Akio Hiraki et al.; "Diamond-Like Carbon Thin Films", TANSO No. 128 (1987) PP. 41-49, published by the carbon society of Japan, Tokyo.) It is preferred that diamond has hardness of up to 10,000(Hv), while the diamond-like carbon film has hardness of 1,000 to 5,000 (Hv). It is noted that the hardness described herein is obtained by a Vickers Hardness test. Further, higher resistivity of diamond and the diamond-like carbon film is suitable but approximately 10 6 Ωcm-10 8 Ωcm is preferred. It is noted that the resistivity described herein is obtained by a four probe method. Similar to diamond synthesis, the diamond-like carbon film is manufactured by an deposition (e.g., vapor phase deposition) process such as plasma CVD, ion beam deposition, or sputtering, which is basically the same as the manufacturing process of the diamond thin layer described hereinafter. According to the present invention, the hard layer may comprise a small amount of impurity. The hard layer comprising high purity diamond is preferably used from the viewpoint of a higher surface acoustic wave propagation velocity and a higher electro-mechanical conversion efficiency. That is, it is preferred that the hard layer comprises diamond as a composition component. On the other hand, the diamond-like carbon film is deposited synthesized even at room temperature while diamond requires a synthesis temperature of 500°C or higher. For this reason, the diamond-like carbon film makes it possible to widen the selection of a base substrate on which the diamond-like carbon film is to be formed. The diamond-like carbon film having a large area can be easily formed and has a flatter surface compared to diamond. According to the present invention, the hard layer may consist of natural single crystalline diamond or single crystalline diamond synthesized at a very high pressure. Alternatively, the hard layer may be a layer of the diamond thin film formed on a base substrate or a diamond-like carbon film. In order to increase the propagation velocity of the surface acoustic wave, the thickness of the hard layer is preferably in excess of 0.4 times the wavelength of propagating surface acoustic waves and more preferably in excess of 0.6 times. The base substrate on which the diamond thin film is to be formed is not limited to a specific one, but preferably comprises of semiconductor material or an inorganic material such as Si, Mo, Cu, Ni, W, GaAs, or LiXbO 3 . The base substrate on which the diamond-like carbon film to be formed makes it possible to select a base substrate in a wider range than that for diamond. Such a base substrate includes a base substrate comprising an organic compound such as a synthetic resin. The diamond thin film formed on the base substrate may be single crystalline or polycrystalline diamond. The diamond thin film formed by vapor phase deposition synthesis generally has a polycrystalline structure. It is preferred that a method of forming a diamond thin film on a base substrate is a CVD method such as a thermal CVD method, a plasma CVD method, a microwave CVD method, a photo-CVD method, or a laser CVD method, sputtering or ion beam deposition. The diamond-like carbon film may be formed on a base substrate by the same forming method as the diamond thin film. These method of forming a diamond thin film are disclosed in Japanese patent Laid-Open No. 58-91100 (91100/1983), No. 58-135117 (135117/1983) and No. 58-110494 (110494/1983). A method of decomposing and exciting a source gas to grow a diamond thin film is enumerated as follows: (1) a method of heating a thermoelectron radiant material to a temperature of 1,500 K or more to activate a source gas; (2) a method using discharge generated by a DC, AC, or microwave electric field; (3) a method using ion bombardment; (4) a method of irradiating light such as a laser beam; and (5) a method of causing combustion of a source gas. A source material used to synthesize a diamond thin film or a diamond-like carbon film is generally a carbon-containing compound and preferably used in combination with hydrogen gas. An oxygen-containing compound and/or an inert gas may be added to the source gas, as needed. The preferred examples of the carbon-containing compound are a paraffin-based hydrocarbon (e.g., methane, ethane, propane, or butane), an olefin-based hydrocarbon (e.g., ethylene, propylene, or butylene), an acetylene-based hydrocarbon (e.g., acetylene or allylene), a diolefin-based hydrocarbon (e.g., butadiene), an alicyclic hydrocarbon (e.g., cyclopropane, cyclobutane, cyclopentane, or cyclohexane), an aromatic hydrocarbon (e.g., cyclobutadiene, benzene, toluene, or cyclohexane), ketones (e.g., acetone, diethyl ketone, and benzophenone), alcohols (e.g., methanol and ethanol), amines (trimethylamine and triethylamine), carbon dioxide gas, and carbon monoxide. These materials can be used singly or in a combination of at least two materials. Alternatively, the carbon-containing compound may be a material consisting essentially of only carbon atoms, such as graphite, coal, or coke. As the oxygen-containing compound added to the source gas, water, carbon monoxide, carbon dioxide, or hydrogen peroxide is preferable because it is easily accessible. The preferred examples of the inert gas which can be added to the source gas are argon, helium, neon, krypton, xenon, and radon. The hard layer may be constituted by a base substrate consisting essentially of single crystalline diamond. The single crystalline diamond base substrate is preferably used to increase the surface acoustic wave propagation velocity and the electro-mechanical coupling coefficient. It is preferred that such a base substrate comprises natural diamond or synthetic diamond synthesized at a very high pressure. According to the present invention, it is preferred that the piezoelectric layer comprises a piezoelectric material such as ZnO, AlN, Pb(Zr,Ti)O 3 , (Pb,La)(Zr,Ti)O 3 , LiTaO 3 , LiNbO 3 , SiO 2 , Ta 2 O 5 , Nb 2 O 5 , BeO, Li 2 B 4 O 7 , KNbO 3 , ZnS, ZnSe, or CdS. The piezoelectric layer may comprise either a single crystalline or polycrystalline piezoelectric material but in order to use a device in a higher-frequency range, the piezoelectric layer preferably comprises a single crystalline material in which a surface acoustic wave is scattered less compared to the polycrystalline material. A layer comprising a piezoelectric material such as ZnO, AlN, or PB(Zr,Ti)O 3 is preferably formed by a CVD method or sputtering. According to the present invention, a pair of electrodes which perform the electro-mechanical conversion, i.e., conversion between an electrical signal and a surface acoustic wave, is typically a comb-like electrode or an electrode group called interdigital transducer (IDT). For example, the interdigital transducer having the configuration as shown in Fig. 6 and Fig. 7 is used. The interdigital transducer can be manufactured to have an electrode spacing of about 1.2 µm using the photolithographic technique. A material for forming the electrode is preferably a metal having a low resistivity and for example, a metal such as Au, Ag, and Al which can be deposited at a low temperature, and a refractory metal such as Ti, W, and Mo are preferably used. Al and Ti are preferably used to facilitate formation of electrodes. W and Mo are preferably used to improve adhesion properties with diamond. The interdigital transducer may be formed of a single metal material or a combination of two or more metal materials such that Al is deposited on Ti. The process of forming the interdigital transducer will be explained below. First, a metal layer selectively comprising the above materials is formed at a predetermined location. Next, a resist film is formed on the metal layer and thereafter a mask having a interdigital transducer pattern formed on a transparent flat plate of glass is placed above the resist film, and the resist film is exposed with a mercury lamp. Thereafter, the exposed resist film is developed to obtain a resist pattern. The resist pattern may be formed by a method of directly exposing a resist film with an electron beam other than the above-mentioned method. After the resist pattern is formed, the metal layer is patterned into a predetermined shape by etching. To etch a layer comprising a metal having a low melting point such as Al, an alkaline solution such as a sodium hydroxide solution or an acidic solution such as a nitric acid solution is used. On the other hand, to etch a refractory metal, a solution mixture of hydrofluoric acid and nitric acid is used. Reactive ion etching using a gas such as BCl 3 may be used to etch the metal layer. According to the present invention, a pair of the interdigital electrodes may also be formed of diamond (semiconductor diamond) having electrical conductivity. It is preferred that the conductive diamond is formed by a method of epitaxially growing diamond while doping an impurity such as P, Al, P, or S, a method of doping such an impurity to insulating diamond by ion implantation, a method of radiating insulating diamond with an electron beam to introduce lattice defects, or a method of hydrogenating insulating diamond. The preferred configuration of a surface acoustic wave device according to the present invention is shown in Fig. 8 - Fig. 13. A surface acoustic wave device shown in Fig. 8 comprises a diamond thin film 2 as a hard layer formed on an Si base substrate 1, and a pair of grounding electrodes 3 placed in apart on the diamond thin film 2. Here, the grounding electrodes 3 are formed of an electrically conductive oxide. Then, a piezoelectric layer 4 is formed so that it covers the grounding electrodes 3 and the diamond thin film 2. Further, interdigital transducers 5 as a group of a pair of electrodes is formed in a position corresponding to each grounding electrode 3 on the piezoelectric layer 4. Here, as shown in Fig. 9, the grounding electrodes 3 and the interdigital transducers 5 can be exchanged. Further, as shown in Fig. 10 and Fig. 11, an SiO 2 film 6 may be formed on a top surface of the device shown in Fig. 8 and Fig. 9. Moreover, as shown in Fig. 12 and Fig. 13, grounding electrodes 3 may be formed on the SiO 2 film 6 of the device shown in Fig. 10 and Fig. 11. It is noted that inventors of the present invention applied for the invention relating to placing the SiO 2 film to the surface acoustic wave device (U.S. Patent Application No. 08/118,976). In the aforesaid configuration, the grounding electrodes 3 of an electrically conductive oxide are sandwiched either between the diamond thin film 2 as a hard layer and the piezoelectric layer 4 or between the piezoelectric layer 4 and the SiO 2 film 6, so that electromechanical coupling is enhanced. Further, the piezoelectric layer and the grounding electrodes may be formed of different material, and they may be formed of basically the same material. However, in a case that the piezoelectric layer and the grounding electrodes are formed of the same material, adhesive in interface between the piezoelectric layer and the grounding electrodes in the surface acoustic wave device can be enhanced more compared to a case that they are formed of different materials. In the case that the piezoelectric layer and the grounding electrodes are formed of the same material, for example it is preferred that the piezoelectric layer is formed of some piezoelectric material and the grounding electrodes are formed of material(oxide) having electrical conductivity by doping an impurity to the piezoelectric material. More particularly, the piezoelectric layer is formed of ZnO and the grounding electrodes are formed of ZnO having electrical conductivity by doping a metal element such as Al, V, Ga or In to this ZnO. Both ZnO having electrical conductivity and ZnO as a piezoelectric body have almost the same crystal structure and composition, and their adhesion is the highest. On the other hand, in the case that the piezoelectric layer and the grounding electrodes are formed of different materials, for example, the grounding electrodes can be formed of a conductive oxide including metal oxide, such as SnO 2 , In 2 O 3 , TiO, LiV 2 O 4 , ReO 3 , LaTiO 3 , SrVO 3 , CaCrO 3 , V 2 O 3 , VO 2 , CrO 2 or IrO 2 , which is nonpiezoelectric material. Alternatively, the piezoelectric layer is formed of some piezoelectric material and the grounding electrodes can be formed of piezoelectric material to which conductivity is added by doping an impurity other than the piezoelectric material used in the piezoelectric layer. More particularly, the piezoelectric layer can be formed of piezoelectric material such as AlN, PB(Zr, Ti)O 3 , LiTaO 3 or SiO 2 , and the grounding electrodes can be formed of ZnO to which a metal element such as Al, V, Ga or In is doped. In the case that the grounding electrodes are formed of piezoelectric material such as ZnO having electrical conductivity, sputtering using a target of sintered body including metal oxide such as Al 2 O 3 , V 2 O 3 , Ga 2 O 3 or In 2 O 3 is preferably used. Further, in the case that the grounding electrode is formed of the electrically conductive oxide which is not a piezoelectric material, sputtering, an ion-plating method or an electron beam (EB) deposition method is preferably used. Resistivity of the grounding electrode is preferably less than 10 -2 Ωcm and more preferably less than 10 -3 Ωcm in order to function sufficiently as a grounding electrode. Resistivity of the piezoelectric layer is preferably more than 10 5 Ωcm. It is noted that each resistivity is measured based on the four probe method. For example, a layer comprising dioxide silicon (SiO 2 ) is preferably deposited by a sputtering method, an ion-plating method, a CVD method, an electron beam (EB) deposition method or a low temperature CVD method. Dioxide silicon (SiO 2 ) may be either crystal or noncrystal. Here, the preferred thickness of each layer and each electrode is shown. Thickness of a hard layer is greater or equal to 1µm, thickness of a piezoelectric layer is 1000 angstroms to 5 µm, thickness of a group of electrodes is 100 angstroms to 1000 angstroms, thickness of a grounding electrode is 100 angstroms to 1 µm, and thickness of a layer comprising dioxide is 1000 angstroms to 5 µm. The adhesive between the grounding electrodes and the hard layer or between the grounding electrodes and the piezoelectric layer is high enough even though the stress is added to the grounding electrodes, so that detachment is hardly occurred, not like the conventional one. Therefore, excellent characteristics of the device can be achieved without any surface acoustic wave scattering or deterioration. In addition, the device has the resistant structure against a variation of temperature during the manufacturing process, so that yielding of the device can be improved. Thus, according to the present invention, the surface acoustic wave device which can increase the yielding of device and has high electromechanical conversion efficiency in a high frequency range can be provided. First Embodiment An Si base substrate having dimensions of 10 X 10 X 1 mm was prepared and placed in a plasma CVD apparatus. The reaction chamber of the apparatus was evacuated, and a gas mixture of H 2 : CH 4 = 200 : 1 was introduced thereto. Plasma CVD was performed under the condition that is a vacuum chamber pressure of about 40 Torr, a base substrate temperature of 850°C, and a microwave power of 400 W to grow a 30µm thick diamond thin film (hard layer) on the Si base substrate. The diamond thin film was left in atmosphere of the reaction chamber at 450°C for 10 minutes to increase the resistivity of the diamond thin film. Next, a surface of the diamond thin film was machine polished using an electro-deposited diamond grindstone, and thereafter magnetron-sputtered using a target of ZnO polycrystalline body including alumina (Al 2 O 3 ). At this time, sputtering was performed in mixture gas of Ar : O 2 = 1 : 1 at the 150 W sputtering output and the 200°C base substrate temperature. Therefore, the conductive ZnO thin film to which 2.0 atomic % Al to ZnO was doped was deposited to 500 angstroms thickness. At this time, resistivity of the deposited conductivity ZnO thin film was less than or equal to 1.0 X 10 -3 Ωcm. Further, under the same condition, magnetron sputtering was applied to the deposited conductivity ZnO thin film using a target of ZnO polycrystalline including Li 2 CO 3 . Therefore, the insulating ZnO thin film to which 2.0 atomic % Li to ZnO was doped was deposited to 5.0µm thickness. Next, a 500 angstroms thick Al layer comprising Al was vapor-deposited on the insulating ZnO thin film by a resistance heating method. Next, interdigital transducers (a group of electrodes) having a 2µm space between each of the electrodes were formed on the Al layer by using a photolithography method. The interdigital transducer shape is similar to the one shown in Fig. 6. Fig. 8 is a sectional view showing a surface acoustic wave device based on the first embodiment with such a structure as described above. As shown in Fig. 8, a diamond thin film 2 is formed on an Si base substrate 1 and grounding electrodes 3 comprising conductive ZnO are formed on the diamond thin film 2, and a piezoelectric layer 4 comprising insulating ZnO thereon. Further, interdigital transducers 5 are formed on the piezoelectric layer 4. First Comparative Example To compare the above surface acoustic wave device with a comparative example, in the first comparative example, a surface acoustic wave device was manufactured following the same procedures as in the surface acoustic wave device based on the first embodiment, except that the 500 angstroms grounding electrodes comprising metal Al were formed by a vacuum vapor deposition method. According to the surface acoustic wave device of the first comparative example, a diamond thin film is formed on an Si base substrate, and a grounding electrodes comprising Al are formed on the diamond thin film, and further a piezoelectric layer comprising insulating ZnO is formed thereon. Moreover, interdigital transducers are formed on the piezoelectric layer. Ten surface acoustic wave devices for each of the first embodiment and the first comparative example were manufactured. Immediately after manufacturing, occurrence of detachment and a first order mode electromechanical coupling coefficient K 2 of each sample were evaluated. Evaluation of the occurrence of detachment was performed using a 200x optical microscope. Further, the electromechanical coupling coefficient K 2 was calculated from the following equation based on a Smith equivalent circuit. K 2 = 1/8 · G · f 0 C · N (G, f 0 and C are measured.) where G: radial conductance of a interdigital transducer f 0 : central frequency C: capacitance of a interdigital transducer N: the number of a pair of electrodes in a interdigital transducer The result is shown in Table 1. # of detached devices/# of devices K 2 (%) 1st embodiment 0 / 10 1.6 1st comparative example 6 / 10 1.3 Second Embodiment Similar to the first embodiment, an Si base substrate having dimensions of 10 X 10 X 1 mm was prepared and placed in a plasma CVD apparatus. The reaction chamber of the apparatus was evacuated, and a gas mixture of H 2 : CH 4 = 200 : 1 was introduced thereto. Plasma CVD was performed under the condition that was a vacuum chamber pressure of about 40 Torr, a base substrate temperature of 850°C, and a microwave power of 400 W to grow a 30µm thick diamond thin film (hard layer) on the Si substrate. The diamond thin film was left in the atmosphere of the reaction chamber at 450°C for 10 minutes to increase the resistivity of the diamond thin film. Next, similar to the first embodiment, a surface of the diamond thin film was machine polished, and thereafter magnetron-sputtered using a target of ZnO polycrystalline body including Ga 2 O 3 (Al 2 O 3 ). At this time, sputtering was performed in mixture gas of Ar : O 2 = 1 : 1 at the 150 W sputtering output and the 200°C base substrate temperature. Therefore, the conductive ZnO thin film to which 3.0 atomic % Ga to ZnO was doped was deposited to 500 angstroms thickness. At this time, resistivity of the deposited conductivity ZnO thin film was less than or equal to 1.0 X 10 -3 Ωcm. Further, under the same condition, magnetron sputtering was applied to the deposited conductivity ZnO thin film using a target of ZnO polycrystalline including Li 2 CO 3 . Therefore, the insulating ZnO thin film to which 2.0 atomic % Li to ZnO was doped was deposited to 2.5µm thickness. Next, a 500 angstroms thick Al layer comprising Al was vapor-deposited on the insulating ZnO thin film by a resistance heating method. Next, interdigital transducers (a group of electrodes) having a 2µm space between each of the electrodes were formed on the Al layer by using a photolithography method. The interdigital transducer shape is similar to the one shown in the first embodiment. Next, magnetron sputtering was applied to the deposited conductive ZnO thin film using a target of SiO 2 . At this point, sputtering was performed in an Ar : O 2 = 1 :1 mixture gas at a 200 W sputtering output and 150 °C base substrate temperature. Therefore, a noncrystalline SiO 2 thin film having a thickness of 4 µm was deposited on the insulating ZnO thin film. Fig. 10 is a sectional view showing a surface acoustic wave device based on the second embodiment with such a structure as described above. As shown in Fig. 10, a diamond thin film 2 is formed on an Si base substrate 1 and grounding electrodes 3 comprising conductive ZnO are formed on the diamond thin film 2, and a piezoelectric layer 4 comprising insulating ZnO thereon. Further, interdigital transducers 5 are formed on the piezoelectric layer 4, and a noncrystalline SiO 2 thin film 6 is formed so that it covers the interdigital transducers 5. Second Comparative Example To compare the above surface acoustic wave device with a comparative example, in the second comparative example, a surface acoustic wave device was manufactured following the same procedures as in the surface acoustic wave device based on the second embodiment, except that the 500 angstroms grounding electrodes comprising metal Al were formed by a vacuum vapor deposition method. According to the surface acoustic wave device of the second comparative example, a diamond thin film is formed on an Si base substrate, and grounding electrodes comprising Al are formed on the diamond thin film, and further a piezoelectric layer comprising insulating ZnO is formed thereon. Moreover, interdigital transducers are formed on the piezoelectric layer, and a noncrystalline SiO 2 film is formed so that it covers the interdigital transducers. Ten surface acoustic wave devices for each of the second embodiment and the second comparative example were manufactured. Immediately after manufacturing, occurrence of detachment and a first order mode electromechanical coupling coefficient K 2 of each sample were evaluated. The evaluating procedure is the same as the first embodiment. The result is shown in Table 2. # of detached devices/# of devices K 2 (%) 2nd embodiment 0 / 10 1.5 2nd comparative example 5 / 10 1.1 Third Embodiment The surface acoustic wave device having the structure shown in Fig. 11 was manufactured. As shown in Fig. 11, a diamond thin film 2 is formed on an Si base substrate 1. Interdigital transducers 5 are formed on the diamond thin film 2, and further a piezoelectric layer 4 comprising insulating ZnO so that it covers the interdigital transducers 3. Grounding electrodes 3 comprising conductive ZnO are formed on the piezoelectric layer 4, and further a SiO 2 thin film 6 is formed thereon. To manufacture the surface acoustic wave device having the structure shown in Fig. 11, the diamond thin film was formed by the plasma CVD under the same condition as the condition for the first embodiment. The thickness of the diamond thin film was 30 µm. The 0.9 µm thick piezoelectric layer 4 and the interdigital transducers 5 were formed under the same condition as the first embodiment. Further, the electrically conductive ZnO thin film to which the 3.0 atomic % In to ZnO was doped by the sputtering method is formed 500 angstroms in thickness. Moreover, the SiO 2 thin film 6 was formed by the sputtering method under the same condition as the forming condition for the second embodiment. The thickness of the SiO 2 thin film 6 was 3 µm. Third Comparative Example To compare the above surface acoustic wave device with a comparative example, in the comparative example, a surface acoustic wave device was manufactured following the same procedures as in the surface acoustic wave device based on the third embodiment, except that the 500 angstroms grounding electrode comprising metal Al was formed by a vacuum vapor deposition method. According to the surface acoustic wave device of the third comparative example, a diamond thin film is formed on an Si base substrate, and interdigital transducers comprising Al are formed on the diamond thin film. A piezoelectric layer comprising insulating ZnO is formed so that it coves the interdigital transducers. Grounding electrodes comprising Al are formed on the piezoelectric layer, and further a SiO 2 thin film is formed thereon. Ten surface acoustic wave devices for each of the third embodiment and the third comparative example were manufactured. Immediately after manufacturing, occurrence of detachment and a first order mode electromechanical coupling coefficient K 2 of each sample were evaluated. The evaluating procedure is the same as the first embodiment. The result is shown in Table 3. # of detached devices/# of devices K 2 (%) 3rd embodiment 0 / 10 3.3 3rd comparative example 7 / 10 3.1 It is apparent from Table 1 to Table 3 that the surface acoustic wave devices in which the grounding electrodes were formed of the conductive oxide according to the 1st-3rd embodiments can suppress the occurrence of detachment and obtain the high electromechanical coupling coefficient compared to the surface acoustic wave devices in which the grounding electrodes were formed of metal according to the 1st to 3rd comparative examples. According to the surface acoustic wave device of the present invention, it is preferably applied especially to communication apparatus such as a car telephone or a cellular phone. From the invention thus described, it will be obvious that the invention may be varied in many ways. Such variations are not to be regarded as a departure from the scope of the invention, and all such modifications as would be obvious to one skilled in the art are intended to be included within the scope of the following claims.

Claims: A surface acoustic wave device comprising: a hard layer comprising diamond as a composition component; a piezoelectric layer formed on said hard layer; at least one pair of interdigital electrodes (5), spaced apart, for performing electro-mechanincal conversion; and a grounding electrode (3) comprising a conductive oxide, placed corresponding to said pair of said interdigital electrodes; said pair of interdigital electrodes and said grounding electrode being formed with said piezolelectric layer between, either said pair of interdigital electrodes or said grounding electrode being formed on said hard layer. A surface acoustic wave device according to Claim 1, wherein said hard layer comprises essentially of diamond. A surface acoustic wave device according to Claim 2, wherein resistivity of said grounding electrode is less than or equal to 10 -2 Ωcm. A surface acoustic wave device according to Claim 2 further comprising a layer comprising dioxide silicon placed on said piezoelectric layer. A surface acoustic wave device according to Claim 2, wherein said grounding electrode is formed on said hard layer. A surface acoustic wave device according to Claim 3, wherein said piezoelectric layer comprises one or more materials selected from the group consisting of ZnO, AlN, Pb(Zr, Ti)O 3 , (Pb, La)(Zr, Ti)O 3 , LiTaO 3 , LiNbO 3 , SiO 2 , Ta 2 O 5 , Nb 2 O 5 , BeO, Li 2 B 4 O 7 , KNbO 3 , ZnS, ZnSe and CdS. A surface acoustic wave device according to Claim 6, wherein a conductive oxide forming said grounding electrode is formed by doping an impurity into material constituting said piezoelectric layer. A surface acoustic wave device according to Claim 7, wherein said piezoelectric layer is formed of ZnO and said grounding electrode is formed by doping an impurity into ZnO. A surface acoustic wave device according to Claim 8, wherein said impurity comprises one or more materials selected from the group consisting of Al, V, Ga and In. A surface acoustic wave device according to Claim 3, wherein a conductive oxide forming said grounding electrode comprises one or more materials selected from the group consisting of SnO 2 , In 2 O 3 , TiO, LiV 2 O 4 , ReO 3 , LaTiO 3 , SrVO 3 , CaCrO 3 , V 2 O 3 , VO 2 , CrO 2 and IrO 2 . A surface acoustic wave device according to Claim 1, wherein said hard layer comprises essentially of a diamond-like carbon film. A surface acoustic wave device according to Claim 11, wherein resistivity of said grounding electrode is less than or equal to 10 -2 Ωcm. A surface acoustic wave device according to Claim 11 further comprising a layer comprising dioxide silicon. A surface acoustic wave device according to Claim 11, wherein said grounding electrode is formed on said hard layer. A surface acoustic wave device according to Claim 12, wherein said piezoelectric layer comprises one or more materials selected from the group consisting of ZnO, AlN, PB(Zr, Ti)O 3 , (Pb, La)(Zr, Ti)O 3 , LiTaO 3 , LiNbO 3 , SiO 2 , Ta 2 O 5 , Nb 2 O 5 , BeO, Li 2 B 4 O 7 , KNbO 3 , ZnS, ZnSe and CdS. A surface acoustic wave device according to Claim 15, wherein a conductive oxide forming said grounding electrode is formed by doping an impurity into material constituting said piezoelectric layer. A surface acoustic wave device according to Claim 16, wherein said piezoelectric layer is formed of ZnO and said grounding electrode is formed by doping an impurity into ZnO. A surface acoustic wave device according to Claim 17, wherein said impurity comprises one or more materials selected from the group consisting of Al, V, Ga and In. A surface acoustic wave device according to Claim 12, wherein a conductive oxide forming said grounding electrode comprises one or more materials selected from the group consisting of SnO 2 , In 2 O 3 , TiO, LiV 2 O 4 , ReO 3 , LaTiO 3 , SrVO 3 , CaCrO 3 , V 2 O 3 , VO 2 , CrO 2 and IrO 2 . A method for manufacturing a surface acoustic wave device comprising: a step of forming a hard layer (2) comprising diamond as a composition component on a base substrate; a step of forming a piezoelectric layer (4) comprising a piezoelectric material; a step of forming a pair of interdigital electrodes (5), spaced apart, for performing electro-mechanical conversion; and a step of forming a grounding electrode in correspondance to said pair of interdigital electrodes comprising a conductive oxide. A method for manufacturing a surface acoustic wave device according to claim 20 comprising: a step of forming a hard layer comprising diamond as a composition component on said base substrate; a step of forming said grounding electrode on said hard layer; a step of forming said piezoelectric layer on both said hard layer and said grounding electrode; and a step of forming said pair of interdigital electrodes on said piezoelectric layer corresponding to said grounding electrode with said piezoelectric layer between. A method for manufacturing a surface acoustic wave device according to Claim 21, wherein a conductive oxide forming said grounding electrode is formed by doping an impurity into material constituting said piezoelectric layer. A method for manufacturing a surface acoustic wave device according to Claim 21 further comprising a step of forming a layer comprising dioxide silicon on both said piezoelectric layer and said pair of interdigital electrodes. A method for manufacturing a surface acoustic wave device according to Claim 21, wherein said hard layer comprises essentially of diamond. A method for manufacturing a surface acoustic wave device according to Claim 21, wherein said hard layer comprises essentially of a diamond-like carbon film. A method for manufacturing a surface acoustic wave device according to claim 20 comprising: a step of forming a hard layer comprising diamond as a composition component on said base substrate; a step of forming said pair of interdigital electrodes on said hard layer; a step of forming said piezoelectric layer on both said hard layer and said pair of interdigital electrodes; and a step of forming said grounding electrode on said piezoelectric layer corresponding to the said pair of interdigital electrodes with said piezoelectric layer between. A method for manufacturing a surface acoustic wave device according to Claim 26, wherein conductive oxide forming said grounding electrode is formed by doping an impurity into material constituting said piezoelectric layer. A method for manufacturing a surface acoustic wave device according to Claim 26, further comprising a step of forming a layer comprising dioxide silicon on both said piezoelectric layer and said grounding electrode. A method for manufacturing a surface acoustic wave device according to Claim 26, wherein said hard layer comprises essentially of diamond. A method for manufacturing a surface acoustic wave device according to Claim 26, wherein said hard layer comprises essentially of a diamond-like carbon film.

Inventors: HACHIGO AKIHIRO, HIGAKI KENJIRO, NAKAHATA HIDEAKI, SHIKATA SHINICHI, HACHIGO, AKIHIRO, HIGAKI, KENJIRO, NAKAHATA, HIDEAKI, SHIKATA, SHINICHI, HACHIGO, AKIHIRO, C/O ITAMI WORKS OF, HIGAKI, KENJIRO, C/O ITAMI WORKS OF, NAKAHATA, HIDEAKI, C/O ITAMI WORKS OF, SHIKATA, SHINICHI, C/O ITAMI WORKS OF
Applicants: SUMITOMO ELECTRIC INDUSTRIES, SUMITOMO ELECTRIC INDUSTRIES, LIMITED
Application year: 1994
Main classification: H03H9
IPC codes: H03H9