Bias circuit for avalanche photodiode

Abstract: A bias circuit for applying a bias voltage to an avalanche photodiode APD2 for detecting light comprises a first diode APD1, a power supply V H connected to the first diode APD1, for applying a voltage to make the diode in breakdown between an anode and a cathode of the first diode APD1, and a constant voltage circuit V2 connected to the avalanche photodiode APD2 for detecting light, for applying a voltage difference of a breakdown voltage generated between the anode and the cathode of the first diode APD1 minus a constant voltage to the avalanche photodiode. The constant voltage is substantially independent from current flowing in the avalanche photodiode APD2 for detecting light to the avalanche photodiode.

Description: The present invention relates to a photodetecting circuit. An avalanche photodiode (APD) is a semiconductor photodetector which has high photodetection sensitivity and high speed of response utilizing the avalanche multiplication. The APD is used to perform the photodetection with high sensitivity. However, each APD has an operating characteristic which varies according to temperature during operation. As a temperature compensating circuit for the APD, circuits disclosed in "Japanese Patent Laid-open No. Shou 60-111540 (111540/1985)", "Japanese Patent Laid-open No. Shou 60-180347 (180347/1985)", and "Japanese Patent Laid-open No. Hei 2-44218 (44218/1990)" have been known. SUMMARY OF THE INVENTION The inventors of the present application found the fact that the difference between the voltage at which the APD showed a constant multiplication factor and the breakdown voltage was substantially constant. The present invention was developed based on this discovery. In the case of using a circuit embodying the invention, the photodetection can be performed with higher stability to temperature as compared with a conventional circuit which is disclosed in "Japanese Patent Laid-open No. Hei 2-44218 (44218/1990)" (see Fig. 5-Fig. 8). According to the present invention there is provided a photodetecting circuit comprising: a second avalanche photodiode for detecting light, and a bias circuit for applying a bias voltage to the avalanche photodiode, characterised in that the bias circuit comprises: a first avalanche photodiode having similar temperature dependent characteristics to those of the first avalanche photodiode and being operable in breakdown at a breakdown voltage; a constant voltage circuit arranged with the first and second avalanche photodiodes so as to apply to the second photodiode a voltage equal substantially to the breakdown voltage minus the constant voltage. Embodiments of the invention may comprise a first APD, a power supply connected to the first APD, for applying a voltage between an anode and a cathode of the first APD to make the first APD in breakdown, and a constant voltage circuit connected to the second APD (i.e. the avalanche photodiode for detecting light), for applying a voltage difference of a breakdown voltage generated between the anode and the cathode of the first APD minus a constant voltage to the second APD. The constant voltage is substantially independent from current flowing in the second APD. In view of temperature compensation (compensation for the temperature dependence of the APD gain versus voltage relationship), the first diode is an avalanche photodiode, and the first diode preferably has the similar structure as the avalanche photodiode for detecting light. The similar structure means that the breakdown voltage of one avalanche photodiode is within a range of 100±20% of the breakdown voltage of the other avalanche photodiode. This constant voltage circuit can be achieved using, e.g., a Zener diode. A cathode of the Zener diode is connected to a cathode of the first diode, and an anode of the Zener diode is connected to the cathode of the avalanche photodiode for detecting light. The Zener diode operates in the breakdown region by applying a reverse bias voltage. The voltage generated at both ends of the ideal Zener diode does not depend on current flowing in the avalanche photodiode for detecting light. In other words, the constant voltage circuit generates a voltage substantially independent from current flowing in the avalanche photodiode for detecting light. In a case that the current flowing in the avalanche photodiode for detecting light varies ±50% and the voltage generated by the constant voltage circuit varies in a range of ±20%, the constant voltage circuit generates a voltage "substantially" independent from the current flowing in the avalanche photodiode for detecting light. Further, a circuit embodying the invention may comprise a first diode, a power supply for applying a reverse voltage to make the diode in breakdown between an anode and a cathode of the first diode, and a constant voltage circuit connected between an anode of the avalanche photodiode for detecting light and ground, for generating a constant voltage substantially independent from current flowing in the avalanche photodiode for detecting light. In a view of temperature compensation, the first diode is an avalanche photodiode and preferably has the similar structure as the avalanche photodiode for detecting light. The constant voltage circuit may comprises a Zener diode, and a cathode of the Zener diode may be connected to the cathode of the first diode, and an anode of the Zener diode may be connected to the cathode of the avalanche photodiode for detecting light. Further, the constant voltage circuit comprises an operational amplifier the output of which is connected to an anode of the avalanche photodiode for detecting light, a first resistor connected between a non-inverting input of the operational amplifier and the output of the operational amplifier, a second resistor connected between a non-inverting input of the operational amplifier and ground, a condenser connected between the inverting input of the operational amplifier and the output of the operational amplifier, and a third resistor connected between the inverting input of the operational amplifier and ground. The constant voltage circuit further comprises a transistor connected between the output of the operational amplifier and the anode of the photodiode for detecting light, and a base of the transistor is connected to the output of the operational amplifier, an emitter to ground, and a collector to the anode of the photodiode for detecting light. The constant voltage circuit may further comprise a variable transistor connected between the third resistor and ground. One end of the variable resistor is kept at a predetermined potential. Embodiments of the invention also relate to a photodetection circuit for outputting a signal corresponding to incident light. Such a photodetection circuit comprises a first diode, a power supply connected to the first diode, for applying a reverse voltage between an anode and a cathode of the first diode to make the diode in breakdown, a plurality of avalanche photodiodes for detecting light connected to a cathode of the first diode, and a constant voltage circuit for generating a constant voltage substantially independent from current flowing in the avalanche photodiode for detecting light, connected between the cathode of the first diode and a cathode of the avalanche photodiode for detecting light, or between an anode of the avalanche photodiode for detecting light and ground. In a view of temperature compensation, the first diode is an avalanche photodiode and preferably has the similar structure as the avalanche photodiode for detecting light. The constant voltage circuit may comprise a Zener diode the cathode of which is connected to the first diode and the anode of which is connected to the cathode of the avalanche photodiode for detecting light. The present invention will become more fully understood from the detailed description given hereinbelow and the accompanying drawings which are given by way of illustration only, and thus are not to be considered as limiting the present invention. Further scope of applicability of the present invention will become apparent from the detailed description given hereinafter. However, it should be understood that the detailed description and specific examples, while indicating preferred embodiments of the invention, are given by way of illustration only, since various changes and modifications within the scope of the invention will become apparent to those skilled in the art from this detailed description. BRIEF DESCRIPTION OF THE DRAWING Fig. 1 is a circuit diagram of a circuit embodying the invention. Fig. 2 is a graph showing measurement results of a breakdown voltage Vb 1 of APD1, a breakdown voltage Vb 2 of APD2, and a temperature coefficient related to a multiplication factor M of APD2 or others. Fig. 3 is a circuit diagram showing one embodiment of a circuit using a Zener diode ZD. Fig. 4 is a circuit diagram showing one embodiment of a circuit in which a voltage difference between a breakdown voltage and a bias voltage can be adjusted. Fig. 5 is a graph showing temperature dependence of a multiplication factor M of a circuit embodying the invention (solid line) and a conventional bias circuit (dotted line) (the multiplication factor is 20 at room temperature). Fig. 6 is a graph showing temperature dependence of a multiplication factor M of a circuit embodying the invention (solid line) and a conventional bias circuit (dotted line) (the multiplication factor is 50 at room temperature). Fig. 7 is a graph showing temperature dependence of a multiplication factor M of a circuit embodying the invention (solid line) and a conventional bias circuit (dotted line) (the multiplication factor is 100 at room temperature). Fig. 8 is a graph showing temperature dependence of a multiplication factor M of a circuit embodying the invention (solid line) and a conventional bias circuit (dotted line) (the multiplication factor is 200 at room temperature). Fig. 9 is a circuit diagram showing one example of bias circuit structure in which a plurality of APDs operate at the same multiplication factor with high stability. Fig. 10 is a circuit diagram showing one example of bias circuit structure in which a plurality of APDs operate at the same multiplication factor with high stability. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The embodiments of the present invention will be explained with reference to the drawings. The inventors of the present application have developed the photodetection circuits for detecting optical signals which are stable against the change of temperature using a first APD for sensing temperature and a second APD for detecting an optical signal the characteristics of which are substantially the same as that of the first APD. When two avalanche photodiodes which have the similar structure are made of the same material, their characteristics are theoretically matched but practically not. Note that the similar structure means that the breakdown voltage of one avalanche photodiode is within 100±20% of the breakdown voltage of the other avalanche photodiode. The inventors of the present application experimented many times and found that when the voltage difference ( Vi 2 =Vb 1 -V2 ) of the breakdown voltage (Vb 1 ) of the first APD minus the substantially constant voltage (V2) was applied to the second APD circuit, the temperature characteristic of the multiplication factor (M) of the second APD was drastically improved. In other words, in the circuit embodying the invention, the first APD and the second APD satisfy a relation of Vb 1 -Vi 2 =constant value (V2) . The second APD circuit comprises the second APD. Note that in a case of the magnification factors of the first APD and the second APD exceeding 50, the temperature characteristic of the magnification factor of the second APD is drastically improved. A constant voltage circuit for generating a potential difference which is substantially independent from the current flowing into the second APD is connected between the second APD circuit and the first APD to subtract the substantially constant voltage (V2) from the breakdown voltage (Vb 1 ) of the first APD, and then the voltage (Vi 2 ) is applied to the second APD circuit. Further, in the circuit embodying the invention, the voltage by which the first diode APD1 is in breakdown may be applied to the first diode APD1, and the cathode of the first diode APD1 and the cathode of the second diode APD2 may be connected, and the constant voltage circuit may be connected between the anode of the second diode APD2 and ground. A constant voltage source using a Zener diode or an operational amplifier is one example of such a constant voltage circuit. It is well-known that "constant voltage circuit" generates a voltage which is completely not independent from a circuit connected thereto. In a case that the quantity of currents flowing into an avalanche photodiode APD2 for detecting light and the voltage generated by the constant voltage circuit varies within ±20%, the constant voltage circuit V2 generates a voltage which does "substantially" not depend on current flowing into the avalanche photodiode APD2 for detecting light. A circuit embodying the invention was developed based on the above findings. Fig. 1 shows a circuit diagram of a circuit according to one embodiment of the present invention. The circuit uses two APDs the characteristics of which are similar. The first APD1 is used for sensing temperature, not for causing light to be incident. The second APD2 is used for detecting an optical signal. One feature of the circuit is that the voltage difference VB=Vi 2 =Vb 1 -V2 of the voltage Vb 1 (breakdown voltage Vb 1 ) which is defined by the potential of the cathode of the first diode APD1 minus the constant voltage (V2) which is independently controllable against the current flowing in the second APD2 is applied to the cathode of the second APD2 (input of the second APD circuit). The anode of the first APD1 is grounded. The cathode of the first APD1 is connected to a node A of Fig. 1. The anode of a power supply V H is connected to the node A through a constant current source I S1 . The cathode of the power supply V H is grounded. The current I S flows into the node A. The constant voltage circuit V2 is connected between the node A and a node B. The constant voltage circuit V2 can decrease the potential at the node B V2 (volts) lower than the potential at the node A. In other words, the potential difference between the node A and the node B is substantially constant (V2) not depending on the current flowing in the second APD2. The potential difference between the node A and the node B can be adjusted by the constant voltage circuit V2 if necessary. A resistor R1 for dividing current is connected between the node B and ground. The cathode of the second APD2 is connected to the node B. The anode of the second APD2 is connected to the node C. A load resistor R L of the second APD2 is connected between the node C and ground. A condenser C is connected between the node C and the output OUT. The second diode APD2, the load resistor R1, and the condenser C constitute the second APD circuit. The cathode of the second APD2 is an input of the second APD circuit. In the following explanation, it is defined that Vm 1 , Vm 2 , Vi 2 , Vb 1 , and Vb 2 denote a bias voltage of the first APD1, a bias voltage of the second APD2, an input voltage of the second APD circuit, a breakdown voltage of the first APD1, and a breakdown voltage of the second APD2, respectively. The operation of the circuit shown in Fig. 1 will be explained. The constant current Is is applied from the power supply V H to the first diode APD1. The voltage (V H volts) enough to make the first diode APD1 in breakdown is applied between the anode and cathode of the first diode APD1. Accordingly, the current Is is applied to the cathode of the first diode APD1, so that the first diode APD1 is in breakdown. The breakdown voltage (Vb 1 ) generated at both ends of the first APD1 (between the anode and cathode) is defined by a potential difference between the potential Vb 1 at the node A and the ground potential (0V). Since the constant voltage circuit V2 is connected between the node A and the node B, the potential VB (Vi 2 ) at the node B is decreased voltage V2 lower than the potential Vb 1 . Consequently, the potential VB=Vb 1 -V2 is applied to the cathode of the second diode APD2. That is, the voltage VB=Vi 2 =Vb 1 -V2 is applied to the second APD circuit. Assuming the voltage at the load resistor R L is V L , the voltage Vm 2 = Vi 2 -V L =Vb 1 -(V2+V L ) is applied between the anode and cathode of the second diode APD2. Accordingly, the voltage difference Vm 2 of the breakdown voltage Vb 1 of the first diode APD1 minus the constant voltage V2 which does not depend on the current flowing in the second diode APD2 is applied to the second APD circuit. The first diode APD1 and the second diode APD2 are contained in the same package. In other words, the first diode APD1 and the second diode APD2 are placed under the same circumstances, so that the diode APD1 and the diode APD2 have the same temperature. The bias voltage Vm 2 is a high voltage so that the multiplication factor M of the second diode APD2 is large enough to be a multiplication factor M (50 or above). The multiplication factor M of the second diode APD2 is large enough, so that the photodetection can be performed with high sensitivity using this circuit. As the breakdown voltage Vb 1 of the first diode APD1 varies, the bias voltage Vm 2 =Vb 1 -(V2+V L ) applied to the second diode APD2 varies in accordance with the change of the voltage Vb 1 . In other words, the bias voltage Vi 2 applied to the second APD circuit varies the same amount of change of the breakdown voltage Vb 1 of the first diode APD1. Consequently, the temperature dependence of the multiplication factor M of the second diode APD2 for detecting an optical signal is suppressed, and the temperature dependence of the output of the second APD circuit is suppressed. The photodetection which is stable against the change of temperature can be performed with use of the circuit shown in Fig. 1. This is based on the following reasons. First, the characteristics of the avalanche photodiodes which would be used as the first diode APD1 or the second diode APD2 were evaluated. Fig. 2 is a graph showing bias voltage dependence of a temperature coefficient (V/°C) of each avalanche photodiode, and breakdown voltage Vb 1 dependence of a temperature coefficient (V/°C) of the first diode APD1 and breakdown voltage Vb 2 dependence of a temperature coefficient (V/°C) of the second diode APD2 in the circuit shown in Fig. 1. The temperature of each APD varied from -15°C to +55°C at a step of 10°C (total of 7 points). The relation between the temperature coefficient (V/°C) and the bias voltage (V) required for obtaining the desired multiplication factor M (M=10, 20, 50, 100) of the APD was examined at every temperature. An APD which had the breakdown voltage Vb 1 of 215V at room temperature among APDs (type S2383) manufactured by Hamamatsu photonics k.k. was used as the first diode APD1. An APD which had the breakdown voltage Vb 2 of 220V at room temperature among APDs (type S2383) manufactured by Hamamatsu photonics k.k. was used as the second diode APD2. The measuring wavelength λ of light was 800nm, and the measuring power of light was 1 nW. The horizontal axis denotes a bias voltage (V) and the vertical axis denotes a temperature coefficient (V/°C). It is understood from Fig. 2 that the breakdown voltage Vb 1 of the first APD1 (shown as black squares in Fig. 2), the breakdown voltage Vb 2 of the second APD2 (shown as black triangles in Fig. 2), and the temperature coefficient of the multiplication M of the second APD2 (shown as white squares, white triangles, white circles, and asterisks in Fig. 2) varied as the bias voltages (Vm 1 , Vm 2 ) applied to the first APD1 and the second APD2 varied. The evaluation of the APD characteristics shown in the graph of Fig. 2 is done by the inventors of present application for the first time. It is considered from the graph of Fig.2 that there is some relation between the temperature coefficient and the bias voltage. In the conventional bias circuit techniques for the avalanche photodiode, it was considered that "a ratio of the breakdown voltage and the bias voltage is constant". In other words, the temperature coefficient also varies in a proportion of the ratio of the breakdown voltage and the bias voltage. Supposing this consideration is true in a high multiplication factor (M=50 or above) region, a line connecting the plotted symbols should be approximated by a straight line A passing through the origin. However, it is apparent from Fig. 2 that a line connecting the plotted symbols cannot be approximated by a ling passing through the origin if the breakdown voltage is divided by the resistor R 1 and the ratio of the breakdown voltage V and the bias voltage is constant. In particular, in this multiplication factor region (M=50 or above), since the change of the multiplication factor M is large as compared with the change of the bias voltage, an error of the multiplication factor M becomes large and the stability of the sensitivity against temperature becomes worse. On the other hand, in circuits embodying the invention, the first APD1 the characteristics of which is similar as that of the second APD2 is in breakdown, and the bias voltage of the breakdown voltage of the first APD1 minus the constant voltage is applied to the APD2, so that the stabilization of the multiplication factor M can be achieved by simple circuit. The multiplication factor M varies according to temperature, and as apparent from the graph of Fig.2, in the case of a large multiplication factor M (M=50 or above), lines connecting plotted symbols for each multiplication factor show the same tendency, and these lines coincide when shifted in a horizontal direction. Consequently, the bias circuit, which compensates the change of the characteristics of the multiplication factor caused by the change of circuit temperature by making the voltage difference between the breakdown voltage of the first diode APD1 and the bias voltage applied to the second diode APD2 to be constant, can suppress the temperature dependence much lower as compared with the circuit in which the ratio of the breakdown voltage and the bias voltage is constant. In Fig. 3, the constant voltage circuit V 2 shown in Fig. 1 which gives the constant voltage difference between the breakdown voltage Vb 1 of the first APD1 and the bias voltage Vm 2 of the second APD2 is achieved with a Zener diode. The constant current source I S comprises a high voltage source (not shown) and a resistor (not shown) connected between the high voltage source and the first APD1. The constant current source I S is connected between the cathode of the first diode APD1 and ground. The anode of the first diode is grounded. The cathode of the Zener diode ZD is connected to a node A to which the constant current source I S and the cathode of the first diode APD1 are connected. The anode of the Zener diode ZD is connected to a node B. The resistor R 21 is connected between the node B and ground. In this circuit, the first diode APD1 and the second diode APD2 are also under the same thermal condition, and the first diode APD1 is used as a temperature sensor, and the first diode APD1 is kept in a breakdown condition. The bias voltage of the constant Zener voltage V Z minus the breakdown voltage Vb 1 of the first diode APD1 is applied to the APD2 to operate the second diode APD2 with the high multiplication factor M (note that R 21 is a resistor for dividing current). When the temperature varies, as the breakdown voltage of the first diode APD1 varies, the voltage applied to the second diode APD2 varies. The temperature coefficient of the bias voltage of the second diode APD2 having the constant multiplication factor is substantially the same as the temperature coefficient of the breakdown voltage of the first diode APD1. The multiplication factor of APD2 is high and kept constant. Fig. 4 is a circuit diagram showing a circuit which is able to adjust the voltage difference between the breakdown voltage and the bias voltage. A cathode of a power supply V H is grounded. An anode of the power supply V H is connected to a node A. A resistor R31 is connected between the node A and a node B. A cathode of a first diode APD1 is connected to the node B. The anode of the first diode APD1 is grounded. A corrector of a transistor Tr31 is connected to the node A. A base of the transistor Tr31 is connected to the node B. An emitter of the transistor Tr31 is connected to a cathode of a second diode APD2. An anode of the second diode APD2 is connected to the node C. A constant voltage circuit 120 is connected to the node C. A resistor 32 is connected between the node C and the node D. A resistor R33 is connected between the node D and ground. A corrector of a transistor Tr32 is connected to the node C. A base of the transistor Tr32 is connected to a node E. A non-inverting input of an operational amplifier Q31 is connected to the node D. A condenser C13 is connected between an inverting input of the operational amplifier Q31 and the node E. An output of the operational amplifier Q31 is connected to the node E. The inverting input of the operational amplifier Q31 is connected to a node F. A resistor 34 is connected between the node F and a volume VR31 which is a variable resistor. One end of the variable resistor VR31 is connected to a reference voltage source 122 and the other end is grounded. A condenser C1 is connected between the node C and the output OUT. In the same way as the circuit shown in Fig. 1, when the voltage is applied to the first diode APD1 by the power supply V H , the first diode APD1 operates in the breakdown region. The voltage of the cathode of the first diode APD1 is buffered and applied to the cathode of the second diode APD2. The constant voltage circuit 120 is connected to the anode of the second diode APD2. Consequently, the voltage difference between the breakdown voltage of the first diode APD1 and the output voltage of the constant voltage circuit 120 is applied to the second diode APD2 as a bias voltage. The constant voltage circuit 120 is a circuit in which the reference voltage from the reference voltage source 122 is divided by the volume VR31 and this divided voltage is applied to the anode of APD2 from an amplifier which comprises the operational amplifier Q31 and the transistor Tr32. The output voltage of the circuit 120 can vary by the volume VR31, and the magnification factor M of the second diode APD2 is adjusted and set by the volume VR31. In Fig. 4, the leakage current of the second diode APD2 flows into the emitter and collector of the transistor TR32. In the case of very small leakage current, the stable operation cannot be achieved. In such a case, a resistor for dividing current is connected in parallel to the second diode APD2. The temperature dependence of the circuit shown in Fig. 4 was evaluated. Figs. 5-8 are graphs showing the temperature dependence of the multiplication factor M of the second diode APD2 shown in Fig. 4. In Figs. 5-8, the solid lines show the multiplication factor M of the APD2 for detecting light in the case of using the bias circuit of the present invention of Fig. 4, and the dotted lines show the multiplication factor M of the APD2 for photodetection in the case of using the conventional bias circuit disclosed in "Japanese Patent Laid-open No. Hei 2-44218 (44218/1990)". The characteristics of the first diode APD1 and the second diode APD2 are similar as the characteristics of the APD shown in Fig. 2. These evaluations were conducted under the condition that the wavelength λ of light for measurement was 800nm and that the power of light P was constant, and that the temperature was in a range of -20°C to +60°C. Fig. 5 is a graph showing experimental results which were conducted by adjusting the bias voltage of the APD2 for detecting a signal and setting the multiplication factor M of the second diode APD2 for detecting a signal to 20 at 25°C. Fig. 6 is a graph showing experimental results which were conducted by adjusting the bias voltage of the APD2 for detecting a signal and setting the multiplication factor M of the second diode APD2 for detecting a signal to 50 at 25°C. Fig. 7 is a graph showing experimental results which were conducted by adjusting the bias voltage of the APD2 for detecting a signal and setting the multiplication factor M of the second diode APD2 for detecting a signal to 100 at 25°C. Fig. 8 is a graph showing experimental results which were conducted by adjusting the bias voltage of the APD2 for detecting a signal and setting the multiplication factor M of the second diode APD2 for detecting a signal to 200 at 25°C. As apparent from these results, the circuit embodying the invention can suppress the changes of the multiplication factor M of the second diode APD2 to very low and improve its temperature characteristic. In other words, the bias circuit, which performs the temperature compensation of the multiplication factor by fixing the voltage difference between the breakdown voltage of the first diode APD1 and the bias voltage of the second diode APD2 to be constant, is superior to the bias circuit, which performs the temperature compensation by fixing the ratio of the breakdown voltage of the first diode APD1 and the bias voltage of the second diode APD2, in the temperature compensation of the multiplication factor. Fig. 9 shows a bias circuit in which a plurality of APDs operate with high stability and the same multiplication factor. A cathode of a first diode (APD for temperature compensation) APD1 is connected to an anode of a power supply V H . A resistor R31 is connected between the cathode of the first diode APD1 and the anode of the power supply V H . An anode of the first diode APD1 is grounded. A cathode of the first diode APD1 is connected to anodes of a plurality of equivalent power supplies V2 1 , V2 2 , V2 3 ··· through a buffer amplifier 140. Cathodes of a plurality of second diodes (APDs for detecting light) APD2 1 , APD2 2 , APD2 3 , and APD2 4 are connected to cathodes of the power supplies V2 1 , V2 2 , V2 3 ···, respectively. An input of a circuit (transimpedance amplifier) 130 1 , 130 2 and 130 3 for converting current to voltage is connected to each anode of the second diode. Optical signals detected by the second diodes APD2 are outputted from outputs OUT1, 2, 3 ··· of the circuits 130 1 , 130 2 , 130 3 ···, respectively. In this circuit, the diode APD1 is made to operate in breakdown region by the power supply V H and the resistor R31, and its cathode voltage is amplified by the buffer amplifier 140 the gain of which is 1 and applied to the APD2 1 , APD2 2 , APD2 3 ···. The voltage applied to each APD2 1 , APD2 2 , APD2 2 , and APD2 4 is adjusted individually by the equivalent constant voltage sources V2 1 , V2 2 , V2 3 ··· (in the same way as Fig. 3, constituted by a high voltage source, and a resistor) because the bias voltage of each APD for a constant multiplication factor is different from each other. The anodes of the APD2 1 , APD2 2 and APD2 3 are connected to the inverting inputs of the operational amplifiers in the circuits 130 1 , 130 2 , 130 3 ···, respectively. The output current of each APD appears at the output of the circuit as the voltage expressed by the product of the output current of the APD and the resistor R 1 , R 2 , R 3 ···. As described above, in this circuit, the change of the multiplication factor caused by the change of temperature is also suppressed, and the sensitivity is adjusted only by setting the multiplication factor with V2 1 , V2 2 , V2 3 ···. Fig. 10 shows a bias circuit which can adjust the bias voltage to be applied to a plurality of the second diodes APD2 1 , APD2 2 , APD2 3 ··· in the same way as the one shown in Fig. 4. Amplifiers 132 1 , 132 2 , 132 3 ··· are connected to these second diodes APD2 1 , APD2 2 , and APD2 3 ···, respectively. In this bias circuit, the APD1 is made to operate in breakdown by the power supply V H and the resistor R31, and the cathode voltage is directly applied to the cathodes of the APD2 1 , APD2 2 , and APD2 3 . On the other hand, the anodes of the second diodes APD2 1 , APD2 2 , APD2 3 ··· are connected to the inverting inputs of the operational amplifiers 132 1 , 132 2 , 132 3 ···, respectively. The potential of the non-inverting inputs of the operational amplifiers 132 1 , 132 2 , 132 3 ··· can be adjusted by the variable resistors V 1 , V 2 , V 3 ···. The potential of the inverting input and the non-inverting input of each operational amplifier 132 1 , 132 2 , 132 3 ··· are operated to be qual, so that the voltage difference between the breakdown voltage of the first diode APD1 and the voltage set by each variable resistor (volume) V 1 , V 2 , V 3 ··· is applied to the second diode APD2 as a bias voltage. Since the cathodes of the plurality of the second diodes APD2 1 , APD2 2 , APD2 3 ··· and the cathode of the first diode APD1 are connected to the same node, this bias circuit can easily be formed on the same silicon substrate. Further, the voltage applied to each second diode APD2 1 , A2D2 2 , APD2 3 ··· is needed to be adjusted individually since the bias voltage for each second diode APD2 1 , APD2 2 , APD2 3 ··· to generate the constant multiplication factor is different. The temperature coefficient of each second diode APD2 1 , APD2 2 , APD2 3 ··· is substantially constant, so that the bias voltage Vm 2 can be set the constant voltage lower than the breakdown voltage of the first diode APD1 only by adjusting the variable resistors VR1 and VR2 connected to the non-inverting input of each operational amplifier 132 1 and 132 2 . Consequently, the stability of the bias circuit is drastically improved and the plurality of APDs are easily operated. Thus, circuits embodying the invention can operate with high stability by setting only the multiplication factor, and the adjustment of every temperature coefficient is not required. Further, in the case of the circuit operating at the constant voltage difference between the bias voltage and the breakdown voltage, the stability of the circuit is superior in a high multiplication factor (>100) region, and the circuit can easily be used in the multiplication factor of 300-500. Furthermore, in a multi-configuration, a process of adjusting a product can drastically be reduced and the change of the multiplication factor of each pixel is suppressed, and the APD can easily be utilized in a very feeble light region. As described above, in embodiments of the invention, the difference between the bias voltage and the breakdown voltage is kept at constant. Consequently, in the case that the difference between the voltage at which the avalanche photodiode shows a high multiplication factor and the breakdown voltage is constant, the bias circuit can operate at high multiplication factor although the temperature varies. Therefore, photodetection can be performed by simple circuit, high sensitivity and high stability against the change of temperature, using avalanche photodiodes.

Claims: A photodetecting circuit comprising: a second avalanche photodiode (APD2, APD2 1 ) for detecting light, and a bias circuit for applying a bias voltage to the avalanche photodiode, characterised in that the bias circuit comprises: a first avalanche photodiode (APD1) having similar temperature dependent characteristics to those of the first avalanche photodiode and being operable in breakdown at a breakdown voltage; a constant voltage circuit (V2, ZD, V2 1 , 120, 132 1 ) arranged with the second (APD2, APD2 1 ) and first (APD1) avalanche photodiodes so as to apply to the second photodiode (APD2, APD2 1 ) a voltage equal substantially to the breakdown voltage minus a constant voltage. A circuit according to claim 1, wherein said constant voltage circuit (V2, ZD, V2 1 ) is arranged between said second avalanche photodiode (APD2, APD2 1 ) and said first avalanche photodiode (APD1). A circuit according to claim 1 wherein said constant voltage circuit (120, 132 1 ) is arranged between said second avalanche photodiode (APD2, APD2 1 ) and ground. A circuit according to claim 1 or 2, wherein said constant voltage circuit comprises a Zener diode (ZD) the cathode of said Zener diode (ZD) being connected to the cathode of said first avalanche photodiode (APD1), and the anode of said Zener diode (ZD) being connected to the cathode of said second avalanche photodiode (APD2). A circuit according to claim 1 or 3, wherein the constant voltage circuit (120) comprises: an operational amplifier (Q31) the output of said operational amplifier (Q31) being connected to the anode of said second avalanche photodiode (APD2); a first resistor (R32) connected between the non-inverting input of said operational amplifier (Q31) and the output of said operational amplifier (Q31); a second resistor (R33) connected between the non-inverting in put of said operational amplifier (Q31) and ground; a condensor (C31) connected between the inverting input of said operational amplifier (Q31) and the output of said operational amplifier (Q31); and a third resistor (R34) connected between the inverting input of said operational amplifier (Q31) and ground. A circuit according to claim 5, wherein the constant voltage circuit (120) further comprises a transistor (Tr32) connected between the output of said operational amplifier (Q31) and the anode of said second avalanche photodiode (APD2) and the base of said transistor (Tr32) being connected to the output of said operational amplifier (Q31), the emitter being connected to ground, and the collector being connected to the anode of said second avalanche photodiode (APD2). A circuit according to claim 5 or 6, wherein the constant voltage circuit (120) farther comprises a variable resistor (VR31) connected between said third resistor (R34) and ground. A circuit according to claim 7, wherein one end of said variable resistor (VR31) is kept at a predetermined potential. A circuit according to claim 1, 2 or 3, wherein said second avalanche photodiode (APD21) is connected in parallel to another avalanche photodiode (APD2 2 , APD2 3 ). A circuit according to any preceding claim wherein the second (APD2, APD2 1 ) and first (ADP1) avalanche photodiodes have similar structures.

Inventors: NAKAMURA SHIGEYUKI, NAKASE SHIGEKI, OHTA TSUYOSHI, NAKAMURA, SHIGEYUKI, NAKASE, SHIGEKI, OHTA, TSUYOSHI, NAKAMURA, SHIGEYUKI, C/O HAMAMATSU PHOTONICS K.K., NAKASE, SHIGEKI, C/O HAMAMATSU PHOTONICS K.K.
Applicants: HAMAMATSU PHOTONICS KK, HAMAMATSU PHOTONICS K.K.
Application year: 1994
Main classification: G05F3
IPC codes: G01J1, G05F3