Glass-ceramic for a magnetic disk substrate

Abstract: A glass-ceramic for a magnetic disk substrate in which the grain size can be controlled and the surface roughness after polishing is within the range from 15Å to 50Å is provided by heat treating a base glass including in weight percent: SiO 2 65 - 83% Li 2 O 8 - 11% K 2 O 0 - 7% Mgo + ZnO + PbO 0.5 - 5.5% in which MgO 0.5 - 5.5% ZnO 0 - 4% PbO 0 - 5% P 2 O 5 1 - 4% Al 2 O 3 0 - 7% As 2 O 3 + Sb 2 O 3 0 - 2% The glass-ceramic contains alpha-quartz (SiO 2 ) and lithium disilicate (Li 2 O · 2SiO 2 ) as main crystal phases. The grown crystal grain of alpha-quartz has a globular grain structure made of aggregated particles (secondary grain).

Description: This invention relates to a magnetic disk substrate having improved surface characteristics after polishing. There has been a rapid progress in developments in magnetic disks demand for which has recently increased remarkably as external media of large scale computers and personal computers. Characteristics required generally for a magnetic disk substrate are as follows: (1) In CSS (contact start and stop) characteristics of a magnetic disk, the magnetic disk should have not a completely smooth surface but a surface whose surface roughness (Ra) is controlled to a range from 15 Å to 50 Å in order to prevent stiction between the head and the disk and damage to the head and media. (2) Since the amount of lifting of the head tends to decrease to the order of 0.1 µm to 0.05 µm owing to improvement of recording density of the magnetic disk, the surface of the disk must be flat and relatively smooth. (3) The material of the magnetic disk substrate must not include anisotropic crystal or other defects and its structure must be dense, homogenious and fine. (4) The material must have sufficient mechanical strength and hardness for standing a high speed rotation and contact with the head. (5) The material must not contain Na 2 O ingredient in principle because the Na 2 O ingredient causes dispersion of sodium ion during the film forming process with resulting deterioration in characteristics of the film. (6) The material must have chemical durability against rinsing and etching with various chemicals. Aluminum alloy has been conventionally used as a material of magnetic disk substrate. The alluminum alloy substrate, however, tends to produce a substrate surface having projections or spot-like projections and depressions during the polishing process due to defects inherent in the material. As a result, the alluminum alloy substrate is not sufficient in flatness and surface roughness and cannot cope with the recent requirement for high density recording necessitated by increase in the amount of information. As a material for overcoming this problem of the alluminum alloy substrate, known in the art is a glass substrate for magnetic disks made of chemically tempered glass. This glass substrate, however, has the following disadvantages: (1) Polishing is made after chemical tempering and so the tempered layer tends to cause instability in thinning the disk substrate. (2) For improving the CSS characteristics, the substrate must be subjected to mechanical or chemical processing for making texture. This prevents mass production of the product at a competitive cost. (3) Since the Na 2 O ingredient is included as an essential ingredient in the glass, the film forming characteristic of the glass is deteriorated with the result that a surface coating processing becomes necessary. It has recently been put into practice In the field of chemically tempered glass and crystallized glass-ceramic to make the surface of the glass rough during the polishing process for overcoming the problem of the texture processing for improving the CSS characteristics. This technique however is not sufficient either for realizing a stable mass production of the product at a competitive cost. Aside from the alluminum alloy substrate and chemically tempered glass substrate, known also in the art are glass-ceramics which satisfy some of the above described requirements. For example, the SiO 2 - Al 2 O 3 -Li 2 O system crystallized glass-ceramic described in the Japanese Patent Application Laid-open No. Sho 60-229234 contains beta-quartz solid solution or beta-spodumene solid solution and has a grain diameter of crystal ranging from about 0.1 µm to about 1.0 µm. For another example, the SiO 2 - Li 2 O system glass-ceramic described in the Japanese Patent Application Laid-open No. Sho 62-72547 contains lithium disilicate and lithium metasilicate as a main crystalline phase. The lithium disilicate phase has a plate-like crystal having a grain diameter of crystal in the range from about 0.3 µm to about 1.5 µm and the lithium metasilicate phase has a granular crystal having a grain diameter of crystal in the range from about 0.3 µm to about 0.5 µm. U.S. Patent No. 3,231,456 discloses a SiO 2 - Li 2 O - P 2 O 5 - MgO system glass-ceramic added with CuO and SnO ingredients in which lithium disilicate is grown as a main crystal phase and alpha-quartz may be grown as a sub crystal phase. Since, however, these glass-ceramics require a heat treatment for crystallization in a high temperature range from 850 °C to 1050 °C, they cannot grow a globular grain strucuture of aggregated particles as a grain structure of alpha-quartz as the glass-ceramic made according to the present invention as will be discussed in detail later. Besides, in U.S. Patent No. 3,231,456, the crystal phase and crystal structure are discussed for providing a ceramic material which is suitable for use as a bonding material. These glass-ceramics require the texture processings for making the surface of the glass-ceramics rough after the polishing process for improving the CSS characteristics which are essential for the material of a magnetic disk substrate. For overcoming these problems, the Japanese Patent Application Laid-open No. Hei 2-247821 proposes a glass-ceramic containing a crystal phase having a texture of sheet-like or chain-like silicate. The anisotropic crystal of this glass-ceramic having an acicular or rod-shaped structure causes significant holes and pits with the result that a sufficient surface roughness cannot be obtained. Further, since the crystal of this glass-ceramic contains Na 2 O ingredient, there occurs dispersion of sodium ions in the film forming process and this adversely affects the characteristics of the film. US-4,985,306 discloses a method for manufacturing a base plate for a recording disk, which comprises steps of: subjecting a base plate containing therein SiO 2 -Li 2 O-Al 2 O 3 series crystallized glass to crystallizing treatment; then polishing the surface of said base plate; and thereafter subjecting the base plate to etching treatment with use of etching agents having different rates of etching between the crystallized layer and the amorphous layer, and also a base plate for a recording disk which is produced by the method as described above. US-A-5,093,173 discloses crystallized magnetic disk substrates in the Li 2 -SiO 2 -system and discusses the importance of the grain size for the substrate properties. Said reference discloses an average particle size of 0.01 to 3 µm. It is, therefore, an object of the invention to provide a magnetic disk substrates which has eliminated the disadvantages of the prior art products and has excellent surface characteristics after polishing by controlling the crystal structure and crystal grain of a crystal produced. Accumulated studies and experiments made by the inventors of the present invention for achieving the above described object of the invention have resulted in the finding, which has led to the present invention, that a glass-ceramic obtained by subjecting to heat treatment, within a specific temperature range, a base glass containing, as an essential ingredient, a MgO ingredient in the SiO 2 - Li 2 O - P 2 O 5 system has, as a crystal phase, alpha-quartz (alpha-SiO 2 ) whose aggregated particles (secondary grain) exhibit a globular grain structure and has excellent surface characteristics of a polished surface obtainable by controlling the surface characteristics by controlling the size of the crystal grain. A glass-ceramic for the magnetic disk substrate achieving the above described object of the invention is formed by subjecting to heat treatment a base glass which consists of in weight percent: SiO 2 65 - 83% Li 2 O 8 - 11% K 2 O 0 - 7% Mgo + ZnO + PbO 0.5 - 5.5% in which MgO 0.5 - 5.5% ZnO 0 - 4% PbO 0 - 5% P 2 O 5 1 - 4% Al 2 O 3 0 - 7% As 2 O 3 + Sb 2 O 3 0 - 2% said glass-ceramic containing alpha-quartz (SiO 2 ) as a main crystal phase and lithium disilicate (Li 2 O - 2SiO 2 ) as a sub crystal phase and a grown crystal grain of the alpha-quartz having a globular grain strucuture made of aggregated particles. The composition of the glass-ceramic is expressed on the basis of composition of oxides as in its base glass. The above described content ranges of the respective ingredients have been selected for the reasons stated below. The SiO 2 ingredient is an important ingredient which produces alpha-quartz (SiO 2 ) as a main crystal phase and lithium disilicate (Li 2 O · 2SiO 2 ) as a sub crystal phase by heat treating the base glass. If the amount of this ingredient is below 65%, the crystal produced in the glass-ceramic is instable and its texture tends to become too rough. If the amount of this ingredient exceeds 83%, difficulty arises in melting the base glass. The Li 2 O ingredient is also an important ingredient which produces lithium disilicate (Li 2 O · 2SiO 2 ) crystal as a sub crystal phase by heat treating the base glass. If the amount of this ingredient is below 8%, growth of this crystal becomes difficult and melting of the base glass becomes also difficult. If the amount of this ingredient exceeds 11%, the grown crystal of the glass-ceramic becomes instable and its texture tends to become too rough and, besides, chemical durability and hardness of the glass-ceramic are deteriorated. The K 2 O ingredient is an ingredient which improves melting property of the base glass and can be included up to 7%. The MgO ingredient is an important ingredient which has been found in the present invention to cause a globular crystal grain of aggregated particles (secondary grain) of alpha-quartz (SiO 2 ) as the main crystal phase to grow randomly in the entire glass. If the amount of this ingredient is below 0.5%, the above described effect cannot be obtained whereas if the amount of this ingredient exceeds 5.5%, growth of a desired crystal becomes difficult. The ZnO and PbO ingredients may also be added because they have a function similar to that of MgO. If the amounts of the ZnO or PbO ingredient exceed 4% and 5%, growth of a desired crystal becomes difficult. For the same reason, the total amount of the MgO, ZnO and PbO ingredients should be within the range from 0.5 to 5.5%. The P 2 O 5 ingredient is an essential ingredient as nucleating agent for the glass-ceramic. If the amount of this ingredient is below 1%, a desired crystal cannot be produced whereas if the amount of this ingredient exceeds 4%, the grown crystal of the glass-ceramic becomes instable and too rough and, besides, its stability against devitrification is deteriorated. The Al 2 O 3 ingredient is an effective ingredient for improving chemical durability of the crystallized glass-ceramic. If the amount of this ingredient exceeds 7%, the melting property of the base glass is deteriorated and, as a result, the rate of crystal growth of alpha-quartz (alpha-SiO 2 ) as the main crystal phase is reduced. The As 2 O 3 and/or Sb 2 O 3 ingredients may be added as refining agents in melting the base glass. It will suffice if the total amount of one or both of these ingredients up to 2% is added to the glass. In addition to the above described ingredients, one or more of B 2 O 3 , CaO, SrO, BaO, TiO 2 and ZrO 2 ingredients may be added in a small amount within the range in which desired properties of the glass-ceramic according to the invention will not be impaired. For manufacturing the glass-ceramic for a magnetic disk substrate according to the invention, the base glass having the above described composition is molten and after being subjected to heat forming and/or cold forming, is heat treated for producing a crystal nucleus under a temperature within a range from 450°C to 540°C and is further heat treated for crystallization under a temperature within a range from 700 °C to 840°C. If the temperature of nucleation is below 450°C, nucleation caused by phase separation due to the P 2 O 5 ingredient is insufficient whereas if the temperature of nucleation exceeds 540°C, the crystal obtained is instable and tends to become coarse. The temperature of crystallization, associated with the effect caused by the MgO ingredient, performs a very important function for controlling the size of the globular grain of aggregated particles (secondary grain) of alpha-quartz (alpha-SiO 2 ). If the temperature of crystallization is below 700°C, the crystal of alpha-quartz will not grow sufficiently whereas if the temprature of crystallization exceeds 840°C, it becomes difficult to maintain the globular grain structure of aggregated particles (secondary grain) with resulting failure in obtaining the above described advantage of the invention. The glass-ceramic thus heat treated is then subjected to the lapping process and finally polishing process and the surface roughness (Ra) after final polishing comes within the range from 15Å to 50Å. Examples Preferred examples of the glass-ceramic will now be described. Table 1 shows examples (No. 1 to No. 10) of the glass-ceramic for a magnetic disk substrate according to the invention and comparative examples of the prior art SiO 2 - Li 2 O - Al 2 O 3 - P 2 O 5 system and SiO 2 - Li 2 O - MgO - P 2 O 5 system glass-ceramics together with results of measurements of the temperatures of the heat treatment, the time of the heat treatment, the diameter of grown crystal grain of alpha-quartz, main crystal phases and surface roughness (Ra) after polishing. In the Table, α - Q represents alpha-quartz (SiO 2 ) and α - Cri represents alpha-cristobalite (SiO 2 ). In the accompanying drawings, Fig. 1A shows the surface roughness (Ra) after polishing of the glass-ceramic of Example 4 in Table 1, Fig. 1B that of the glass-ceramic of the Compartive Example No. 1 in Table 1, and Fig. 1C that of the glass-ceramic of the Comparative Example No. 2 in Table 1 for comparison. Figs. 2A and 2B show SEM (scanning electron microscope images of the crystal structure after HF etching of the glass-ceramic of Example 4 and Fig. 2C that of the glass-ceramic of the Comparative Example No. 1 and Figs. 2D and 2E those of the glass-ceramic of the Comparative Example No. 2, respectively for comparison. Fig. 3 is a graph showing relationship between the temperature of crystallization and the surface roughness (Ra) of the aggregated particles of alpha-quartz in the glass-ceramic of Example No. 5. Fig. 4 is a three-dimentional image by AFM (atomic force microscope) of the glass-ceramic of the Example No. 5 having the surface roughness (Ra) of 32 A after polishing. It will be seen from Fig. 4 that the globular crystal grains each made of aggregated particles (secondary grain) of alpha-quartz form minute projections scattered over the entire surface of the magnetic disk substrate. For manufacturing the glass-ceramics of the above descrbied examples, materials including oxides, carbonates and nitrates are mixed and molten in a conventional melting apparatus at a temperature within the range from about 1350 °C to about 1500 °C. The molten glass is stirred to homogenize It and thereafter formed into a desired shape and annealed to provide a formed glass. Then, this formed glass is subjected to heat treatment to produce the crystal nucleus under a temperature within the range from 450 °C to 540 °C for about one to five hours and then is subjected to further heat treatment for crystallization under a temperature within the range from 700 °C to 840 °C for about one to five hours to produce the desired glass-ceramic. In making a specimen for measuring the surface roughness (Ra), the above described glass-ceramic is lapped for about 10 to 20 minutes with grains having average grain diameters ranging from 9 µm to 12 µm and then is finally polished for about 30 to 40 minutes with cerium oxide having average grain diameters ranging from 1 µm to 2 µm. As shown in Table 1, the glass-ceramic of Example No. 4 has the desired surface roughness but the glass-ceramics of the Comparative Examples Nos. 1 and 2 have no such desired surface roughness. As will be apparent from Figs. 1A, 1B and 1C, the glass-ceramic of Example No. 4 has a desired surface roughness but the glass-ceramic of the Comparative Examples Nos. 1 and 2 do not. As will be apparent from the SEM images of Figs. 2A, 2B and 2C, the alpha-quartz crystal grains of the glass-ceramic of Example No. 4 exhibit the globular grain structure of aggregated particles and are projecting from the surface of the glass-ceramic whereas the crystal grains of the Comparative Example No. 1 exhibit the acicular or rod-like grain structure and, accordingly, the desired surface roughness cannot be obtained. Further, as shown in Figs. 2D and 2E, the crystal grains of the Comparative Example No. 2 exhibit a non-aggregated mono-spherical structure in which a desired surface roughness cannot be obtained and the grain diamter cannot be controlled freely as in the applicant's invention as will be described more fully later. As to the grain diameter of the glass-ceramic the grain diameter can be controlled to the range from 0.3 µm to 3µm by varying heat treatment conditions. Difference between the globular grain structure made of aggregated particles of alpha-quartz according to the applicant's invention and the non-aggregated mono-spherical grain structure of alpha-quartz of Comparative Example No. 2 will be described more fully below. As will be apparent from the SEM images of the glass-ceramic of Example No. 4 shown in Fig. 2B, each of alpha-quartz grains of the present invention has a globular structure which is composed of many minute particles aggregated into a globe. These alpha-quartz grains are randomly scattered in the fine particles of lithium disilicate (Li 2 O.2SiO 2 ) as shown by Fig. 2A. This state has been found quite beneficial for controlling the surface roughness (Ra) after polishing as will be described below. In contrast, as will be seen from the scanning microscopic photographs of Figs. 2D and 2E, it has been confirmed by X-ray diffraction analysis that in the glass-ceramic of Comparative Example No. 2, the lithium disilicate (Li 2 O-2SiO 2 ) crystal grains and the alpha-quartz (alpha-SiO 2 ) crystal grains grow but distinction in the state of growing between these two different crystal grains is not so clear as in the glass-ceramic of the present invention and, besides, these two crystal grains do not assume definite shapes as in the glass-ceramic of the present invention. The surface roughness control characteristics of the glass-ceramic made are obtained by the specific crystal structure of the glass-ceramic of the invention in which the globular crystal grains each being formed of aggregated small particles of alpha-quartz which is inherently stronger than lithium disilicate physically and chemically are randomly scattered in the much smaller crystal grains of lithium disilicate. This specific structure causes the lithium disilicate grains to be ground more quickly than the alpha quartz grains and, as a result, the alpha-quartz grains come to project relatively prominently over the surface of the lithium disilicate grains as the polishing processing progresses whereby surface roughness (Ra) of a relatively large value can be obtained. It will be clearly seen from the three-dimentional image by AFM shown in Fig. 4 that the globular grains of aggregated small particles of physically and chemically strong alpha-quartz project randomly over the entire polished surface. An additional advantage of the globular grain structure formed of aggregated particles (secondary grain) of alpha-qaurtz in the glass-ceramic according to the invention is that the grain diamteter can be variably controlled by changing the temperature of crystallization to such a degree that any desired grain diameter can be achieved. This is because growth of the crystal grain of alpha-quartz in the present invention depends largely upon the degree of aggregation of small particles and this aggregation depends upon the temperature of crystallization employed. Such fine control of the grain diameter can never be achieved in the prior art glass-ceramic of the Comparative Example No. 2 in which the crystal grains are mono-spherical and do not assume definite shapes. In summing up, the glass-ceramic for magnetic disk substrate according to the invention is obtained by heat treating a SiO 2 - LiO 2 - P 2 O 5 - MgO system glass of a specific composition range and, therefore, the main crystal phase thereof consists of alpha-quartz (alpha-SiO 2 ) and the lithium disilicate (Li 2 O 2SiO 2 ). The grown crystal grain of alpha-quartz has a globular grain structure formed of aggregated particles (secondary grain) which facilitates control of the grain size by heat treatment and achievement of a desired surface roughness of the polished surface whereby the glass-ceramic according to the invention can be utilized as an excellent magnetic disk substrate. According to the method for manufacturing the glass-ceramic comprises the steps of melting and forming the above described base glass and then subjecting the formed glass to heat treatment for producing a crystal nucleus under a temperature within the range from 450°C and 540°C and then to a further heat treatment for crystallization under a temperature within a range from 700°C to 840 °C, the glass-ceramic which has the globular grains formed of aggregated particles (secondary grain) and thereby has excellent characteristics can be manufactured at good yield. A glass-ceramic for a magnetic disk substrate formed by subjecting to heat treatment a base glass which consists of in weight percent: SiO 2 65 - 83% Li 2 O 8 - 11% K 2 O 0 - 7% Mgo + ZnO + PbO 0.5 - 5.5% in which MgO 0.5 - 5.5% ZnO 0 - 4% PbO 0 - 5% P 2 O 5 1 - 4% Al 2 O 3 0 - 7% As 2 O 3 + Sb 2 O 3 0 - 2% said glass-ceramic containing alpha-quartz (SiO 2 ) and lithium disilicate (Li 2 O·2SiO 2 ) as main crystal phases and a grown crystal grain of alpah-quartz having a globular grain structure made of aggregated particles (secondary grain). A glass-ceramic as defined above wherein the size of the crystal grain of alpha-quartz can be controlled led within a range from 0.3 µm to 3 µm and surface roughness (Ra) of a polished surface of the glass-ceramic can be controlled within a range from 15Å to 50Å. A method for manufacturing a glass-ceramic for a magnetic disk substrate comprising steps of: melting a base glass consisting of in weight percent SiO 2 65 - 83% Li 2 O 8 - 11% K 2 O 0 - 7% Mgo + ZnO + PbO 0.5 - 5.5% in which MgO 0.5 - 5.5% ZnO 0 - 4% PbO 0 - 5% P 2 O 5 1 - 4% Al 2 O 3 0 - 7% As 2 O 3 + Sb 2 O 3 0 - 2%; forming the molten glass into a desired shape; subjecting the formed glass to heat treatment for producing a crystal nucleus under a temperature within a range from 450 °C to 540 °C; and further subjecting the glass to heat treatment for crystallization under a temperature within a range from 700 °C to 840 °C.

Claims: A magnetic disk substrate made of a glass-ceramic having crystal phases of lithium disilicate (Li 2 O.2SiO 2 ) and alpha-quartz (SiO 2 ) characterized in that said crystal phase of alpha-quartz constitutes the main crystal phase and is formed of grown crystal grains each having a globular grain structure made of aggregated particles, each globular grain having a size within the range from 0.3 µm to 3 µm, that a polished surface of the magnetic disk substrate has the globular grains of alpha-quartz projecting from the surface of crystal grains of lithium disilicate and that the surface roughness (Ra) of the polished surface of the magnetic disk substrate is within a range from 15Å to 50Å.

Inventors: GOTO NAOYUKI, YAMAGUCHI KATSUHIKO, GOTO, NAOYUKI, YAMAGUCHI, KATSUHIKO
Applicants: OHARA KK, KABUSHIKI KAISHA OHARA
Application year: 1994
Main classification: C03C10
IPC codes: C03C23, C03C10, G11B5