Data reading method in semiconductor storage device capable of storing three- or multi-valued data in one memory cell

Abstract: A data reading method in a semiconductor storage device capable of storing three- or multi-valued data in one memory cell, in which the state of each memory cell is classified into a plurality of sets to thereby detect what set the present storage state of the memory cell belongs to. That is, several kinds of voltage values are applied to each memory cell to detect whether a current flows in the memory cell or not in accordance with the magnitude of the voltage values to thereby judge the present storage state of each memory cell.

Description: The present invention relates to a data reading method in a semiconductor storage device for storing three- or multi-valued data in one memory cell. Description of the Related Art In a semiconductor storage device such as an EEPROM (Electrically Erasable Programmable Read Only Memory), or the like, put into practical use at present, no storage state but two kinds of storage states "0" and "1" can be set in one memory cell, so that the storage capacity of one memory cell is one bit (= two values). On the contrary, there has been proposed a semiconductor storage device in which four kinds of storage states "00" to "11" are set in one memory cell so that one memory cell has the storage capacity of two bits (= four values). Such a semiconductor storage device as described above (hereinafter referred to as "multi-valued memory") will be described below about the case of an EEPROM as an example. EP-A-0 349 775 discloses a way to implement the multistage storage concept in which several sense amplifiers, each with its own current reference levels, are used simultaneously, during read, to compare the current of the Flash EEPROM with these four reference levels. Fig. 6A is a schematic sectional view of a floating gate type memory cell 61 in a conventional EEPROM. In this drawing, a drain 63 and a source 64 constituted by n-type impurity diffusion layers respectively are formed in a surface region of a p-type silicon substrate 62 so that a channel region 70 is formed between the drain 63 and the source 64. Further, a bit line 65 formed by lamination and a source line 66 formed by lamination are electrically connected to the drain 63 and the source 64, respectively. Further, a tunnel insulating film 71 constituted by an SiO 2 film having a thickness of about 10 nm is formed on the channel region 70. A floating gate 67 constituted by low-resistance polysilicon, an interlayer insulating film 68 and a control gate (word line) 69 constituted by low-resistance polysilicon are formed successively on the tunnel insulating film 71. Fig. 6B is a connection diagram of this memory cell. A method of writing four-valued data "00" to "11" into the memory cell 61 formed as described above and reading the data from the memory cell 61 will be described below. Firstly, the case of writing will be described. When, for example, data "11" is to be written into the memory cell 61, the bit line 65 and the source line 66 are grounded and opened, respectively, and then a pulse voltage in a range of from about 10 v to about 15 V is applied to the control gate 69. By this application of the pulse voltage, a potential is induced in the floating gate 67 so that a predetermined quantity of electric charges are injected into the floating gate 67 by Fowler-Nordheim tunnelling in accordance with the potential difference between the floating gate 67 and the drain 63. As a result, the threshold value of the gate voltage of the memory cell 61 increases to about 5 V. This state is defined as "11". When, for example, data "10", "01" or "00" is to be written into the memory cell, the threshold value of the gate voltage of the memory cell 61 can be set to be 3 V, 1 V or -1 V in the same manner as described above in the case of writing of data "11" while the voltage applied to the bit line 65 is selected to be 1 V, 2 V or 3 V. Secondly, the case of reading will be described below. Generally, a field-effect transistor (FET) has such characteristic that a current flows across the source and drain of the FET if the voltage applied to the gate electrode of the FET is not lower than a threshold value in the case where a voltage is applied to the source or drain, while, on the contrary, no current flows across the source and drain of the FET if the voltage applied to the gate electrode of the FET is lower than the threshold value. Reading is executed by using this characteristic of the FET. For example, a voltage of 1 V is applied to the bit line 65, while the source line 66 is set to 0 V. In this condition, voltages of 0 V, 2 V and 4 V are applied to the control gate 69 successively. If a current flows across the source and the drain when a voltage of 0 V is applied to the control gate 69, the threshold value of the gate voltage of the memory cell 61 is judged to be -1 V, and data "00" is therefore read out. On the other hand, if no current flows in the case of the gate voltage of 0 V but a current flows in the case of the gate voltage of 2 V, the threshold value of the gate voltage of the memory cell 61 is judged to be 1 V, and data "01" is therefore read out. Further, if no current flows in the case of the gate voltage of 0 V and in the case of the gate voltage of 2 V but a current flows first in the case of the gate voltage of 4 V, the threshold value of the gate voltage of the memory cell 61 is judged to be 3 V, and data "10" is therefore read out. Furthermore, if no current flows across the source and the drain in spite of the application of any of the above voltages to the control gate 69, the threshold value of the gate voltage of the memory cell 61 is judged to be 5 V, and data "11" is therefore read out. Although the above description has been made upon the case where four-valued information, that is, two-bit information is stored in one memory cell, researches have been made upon the case where multi-valued information capable of indicating more values than four values is stored in one memory cell. In the aforementioned data reading method in the conventional multi-valued memory, however, there arises a problem that the number of times of reading operation subjected to one memory cell increases. When, for example, four-valued information is stored in one memory cell, three times of reading operation in the gate voltage values of 0 V, 2 V and 4 V is required necessarily as described above. Although reading is practically performed while a voltage changed stepwise to be 0 V, 2 V and 4 V is applied to the control gate, the fact that three times of reading operation is required remains unchanged. When n-valued (n≧2) information is stored in one memory cell, (n-1) times of reading operation is generally required in the conventional reading method. In expression in the number of bits, when k-bit (k≧1) information is stored in one memory cell, (2 k -1) times of reading operation is generally required in the conventional reading method. It is therefore an object of the present invention to provide a reading method in a semiconductor storage device and a memory device in which the number of times of reading operation subjected to a multi-valued memory is reduced so that read access time can be shortened. The above object is achieved by a data reading method according to claim 1 and by a memory device according to claim 31. The dependent claims are related to further advantageous aspects of the present invention. The invention is described in more detail in connection with the drawings, in which Fig. 1 is a flow chart of a reading method according to a first embodiment of the present invention; Fig. 2 is a block diagram showing the main structure of an EEPROM used in the first embodiment of the present invention; Fig. 3 is a flow chart of a reading method according to a second embodiment of the present invention; Fig. 4 is a schematic connection diagram showing an NAND type block used in a third embodiment of the present invention and having two memory cells series-connected; Fig. 5 is a flow chart of a reading method according to the third embodiment of the present invention; Fig. 6A is a schematic sectional view of a conventional floating gate type memory cell; and Fig. 6B is a connection diagram of the floating gate type memory cell. Referring now to Fig. 2, there is shown the main structure of a semiconductor storage device to which the present invention is applied. In this drawing, the reference numeral 1 designates a cell array which has a plurality of memory cells arranged lengthwise and breadthwise in the form of a matrix though not shown. Each of these memory cells is a floating gate type memory cell substantially having the same structure as that described preliminarily with reference to Figs. 6A and 6B. Though not shown, control gates, drains and sources of the memory cells are connected to word lines, to bit lines and to a common source line, respectively. The word lines are arranged in the direction of arrangement of the columns of the cell array and connected to a decoder 2. On the other hand, the bit lines are arranged in the direction of arrangement of the rows of the cell array and connected to a multiplexer 4. The sources are grounded. Through the decoder 2, a voltage control circuit 3 applies a predetermined voltage value to a word line selected from the plurality of word lines in the cell array. On the other hand, the multiplexer 4 supplies the voltage value of the selected bit line in the cell array to a sense amplifier 5. The sense amplifier 5 detects the presence or absence of the selected bit line and supplies the result of detection to a signal control circuit 6. The signal control circuit 6 receives data supplied from the outside through an input interface (I/F) 7 as an address signal, judges the word line and bit line to be selected on the basis of this address signal and supplies the results of judgment to the decoder 2 and to the multiplexer 4, respectively. Further, a voltage value to be nextly applied to the control gate of the selected memory cell is determined on the basis of the result of detection in the sense amplifier 5, so that a result of the determination is supplied to the voltage control circuit 3. Further, data in the selected memory cell is supplied to the outside through an output I/F 8. The operation of this embodiment configured as described above will be described below. In the case of reading operation, an address signal from the outside is inputted into the signal control circuit 6 through the input I/F 7. Upon reception of the address signal, the signal control circuit 6 judges a word line and a bit line to be selected in the cell array on the basis of the supplied address signal and supplies the results of judgment as instructions to the decoder 2 and the multiplexer 4, respectively. The decoder 2 and the multiplexer 4 select the word line and the bit line, respectively, on the basis of these instructions. Further, the signal control circuit 6 judges the magnitude of a voltage to be applied to the control gate of the selected memory cell and supplies the result of judgment as an instruction to the voltage control circuit 3. The voltage control circuit 3 applies a predetermined voltage to the selected word line through the decoder 2. On the other hand, a predetermined voltage is applied to the selected bit line by the multiplexer 4. As a result, whether a current flows in the selected bit line or not is determined in accordance with the state of the threshold value of the selected memory cell. The state of the current in the selected bit line is transmitted from the multiplexer 4 to the sense amplifier 5. The sense amplifier 5 detects the presence or absence of the current in the selected bit line and transmits the result of detection to the signal control circuit 6. The signal control circuit 6 determines a voltage to be nextly applied to the control gate of the selected memory cell on the basis of the result of the detection in the sense amplifier 5 and supplies the result of determination as an instruction to the voltage control circuit 3. Further, the signal control circuit 6 outputs, through the output I/F 8, the storage data of the selected memory cell finally obtained by repeating the aforementioned procedure. Fig. 1 shows a flow chart of reading operation according to the first embodiment of the present invention. In this embodiment, assume that the gate voltage of each of the memory cells takes any one of the threshold values -1 V, 1 V, 3 V and 5 V. That is, assume that each memory cell has a storage capacity of two bits (=four values). First, the signal control circuit 6 instructs the voltage control circuit 3 to apply a voltage of 2 V to the control gate of the selected memory cell. In this occasion, a voltage of 5 V is applied to the drain (step S1). Then, whether a current flows across the drain and source of the selected memory cell or not is detected through the selected bit line and the sense amplifier 5 (step S2). When it is confirmed in the step S2 that a current flows across the drain and source of the selected memory cell, that is, when current conduction is made in the selected memory cell, the threshold value of the gate voltage of the memory cell is judged to be either -1 V or 1 V, so that the signal control circuit 6 instructs the voltage control circuit 3 to apply a voltage of 0 V to the control gate of the selected memory cell nextly (step S3). Then, whether a current flows across the drain and source of the selected memory cell or not is detected (step S4). When a current flows, the threshold value of the gate voltage of the memory cell is judged to be -1 V, so that "00" as storage data of the memory cell is outputted through the output I/F 8 (step S5). When it is contrariwise confirmed in the step S4 that no current flows, the threshold value of the gate voltage of the memory cell is judged to be 1 V, so that "01" as storage data of the memory cell is outputted (step S6). When it is confirmed in the step S2 that no current flows across the drain and source of the selected memory cell, the threshold value of the gate voltage of the memory cell is judged to be either 3 V or 5 V, so that the signal control circuit 6 instructs the voltage control circuit 3 to apply next a voltage of 4 V to the control gate of the selected memory cell (step S7). Then, whether a current flows across the drain and source of the selected memory cell is detected (step S8). When a current flows, the threshold value of the gate voltage of the memory cell is judged to be 3 V, so that "10" as storage data of the memory cell is outputted through the output I/F 8 (step S9). When it is confirmed in the step S8 that no current flows, the threshold value of the gate voltage of the memory cell is judged to be 5 V, so that "11" as storage data of the memory cell is outputted (step S10). As described above, according to the reading method of this embodiment, reading of data from one memory cell having a storage capacity of two bits can be performed by two times of reading operation. Although the conventional method requires three times of reading operation by application of all voltages 0 V, 2 V and 4 V, the number of times of necessary reading operation is reduced according to the method of this embodiment. Accordingly, access time can be reduced. Referring to Fig. 3, a second embodiment of the present invention will be described below. In this embodiment, the gate voltage of each of the memory cells takes any one of threshold values -1 V, 0 V, 1 V, 2 V, 3 V, 4 V, 5 V and 6 V. That is, each of the memory cells has a storage capacity of three bits (= eight values). First, the signal control circuit 6 instructs the voltage control circuit 3 to apply a voltage of 2.5 V to the control gate of a selected memory cell. In this occasion, a voltage of 5 V is applied to the drain of the selected memory cell (step S31). Then, whether a current flows across the drain and source of the selected memory cell or not is detected through the selected bit line and the sense amplifier 5 (step S32). When it is confirmed in the step S32 that a current flows across the drain and source of the selected memory cell, that is, when current conduction is made in the selected memory cell, the threshold value of the gate voltage of the memory cell is judged to be either -1 V or 2 V, so that the signal control circuit 6 instructs the voltage control circuit 3 to apply next a voltage of 0.5 V to the control gate of the selected memory cell (step S33). Then, whether a current flows across the drain and source of the selected memory cell or not is detected (step S34). When it is confirmed in the step S34 that a current flows across the drain and source of the selected memory cell, the threshold value of the gate voltage of the memory cell is judged to be either -1 V or 0 V, so that the signal control circuit 6 instructs the voltage control circuit 3 to apply a voltage of 0.5 V to the control gate of the selected memory cell (step S35). Then, whether a current flows across the drain and source of the selected memory cell or not is detected (step S36). When a current flows, the threshold value of the gate voltage of the memory cell is judged to be -1 V, so that "000" as storage data of the memory cell is outputted through the output I/F 8 (step S37). When it is contrariwise confirmed in the step S36 that no current flows, the threshold value of the gate voltage of the memory cell is judged to be 0 V, so that "001" as storage data of the memory cell is outputted (step S38). When it is confirmed in the step S34 that no current flows across the drain and source of the selected memory cell, the threshold value of the gate voltage of the memory cell is judged to be either 1 V or 2 V, so that the signal control circuit 6 instructs the voltage control circuit 3 to apply a voltage of 1.5 V to the control gate of the selected memory cell (step S39). Then, whether a current flows across the drain and source of the selected memory cell or not is detected (step S40). When a current flows, the threshold value of the gate voltage of the memory cell is judged to be 1 V, so that "010" as storage data of the memory cell is outputted through the output I/F 8 (step S41). When it is contrariwise confirmed in the step S40 that no current flows, the threshold value of the gate voltage of the memory cell is judged to be 2 V, so that "011" as storage data of the memory cell is outputted (step S42). When it is confirmed in the step S32 that no current flows across the drain and source of the selected memory cell, the threshold value of the gate voltage of the memory cell is judged to be any one of values 3 V to 6 V, so that the signal control circuit 6 instructs the voltage control circuit 3 to apply next a voltage of 4.5 V to the control gate of the selected memory cell (step S43). Then, whether a current flows across the drain and source of the selected memory cell or not is detected (step S44). When it is confirmed in the step S44 that a current flows across the drain and source of the selected memory cell, the threshold value of the gate voltage of the memory cell is judged to be either 3 V or 4 V, so that the signal control circuit 6 instructs the voltage control circuit 3 to apply next a voltage of 3.5 V to the control gate of the selected memory cell (step S45). Then, whether a current flows across the drain and source of the selected memory cell or not is detected (step S46). When a current flows, the threshold value of the gate voltage of the memory cell is judged to be 3 V, so that "100" as storage data of the memory cell is outputted through the output I/F 8 (step S47). When it is contrariwise confirmed in the step S46 that no current flows, the threshold value of the gate voltage of the memory cell is judged to be 4 V, so that "101" as storage data of the memory cell is outputted (step S48). When it is confirmed in the step S44 that no current flows across the drain and source of the selected memory cell, the threshold value of the gate voltage of the memory cell is judged to be either 5 V or 6 V, so that the signal control circuit 6 instructs the voltage control circuit 3 to apply next a voltage of 5.5 V to the control gate of the selected memory cell (step S49). Then, whether a current flows across the drain and source of the selected memory cell or not is detected (step S50). When a current flows, the threshold value of the gate voltage of the memory cell is judged to be 5 V, so that "110" as storage data of the memory cell is outputted through the output I/F 8 (step S51). When it is contrariwise confirmed in the step S50 that no current flows, the threshold value of the gate voltage of the memory cell is judged to be 6 V, so that "111" as storage data of the memory cell is outputted (step S52). As described above, according to the reading method of this embodiment, reading of data from one memory cell having a storage capacity of three bits can be performed by three times of reading operation, so that the number of times of necessary reading operation is reduced greatly. As a result, access time can be shortened greatly. Referring to Figs. 4 and 5, a third embodiment of the present invention will be described below. As shown in Fig. 4, in this embodiment, reading is made from an NAND type block having two memory cells 41 and 42 series-connected and each having a storage capacity of two bits. The gate voltage of each of the memory cells takes any one of threshold values -1 V, 1 V, 3 V and 5 V. In this embodiment, higher significant two bits and lower significant two bits are stored in the memory cells 41 and 42, respectively, so that information of four bits in total is stored in the two memory cells. Fig. 5 is a flow chart of reading operation. In order to read information of higher significant two bits stored in a memory cell 41, a voltage of 6 V is applied to the gate of a non-selected memory cell 42 (step S60) so that the memory cell 42 is turned to a current conduction state even in the case where the threshold value of the gate voltage is any one of values -1 V, 1 V, 3 V and 5 V. The method of reading data from the selected memory cell 41 in this condition is the same as that described previously in the first embodiment. That is, a voltage of 2 V is applied to the control gate of the selected memory cell 41 (step S61) and whether a current flows in a corresponding bit line or not is detected by the sense amplifier 5 to thereby detect whether current conduction is made in the selected memory cell 41 or not (step S62). Incidentally, the input potential of the sense amplifier 5 is set to be 0 V and a voltage of 5 V is applied to the drain terminal V DD of the memory cell 41. When it is confirmed in the step S62 that current conduction is made in the selected memory cell 41, the threshold value of the gate voltage of the selected memory cell 41 is judged to be either -1 V or 1 V, so that a voltage of 0 V is applied next to the control gate of the selected memory cell 41 (step S63) to detect whether current conduction is made in the selected memory cell 41 or not (step S64). When it is confirmed in the step S64 that current conduction is made in the selected memory cell 41, the threshold value of the gate voltage of the selected memory cell 41 is judged to be -1 V, so that "00" as higher significant bit data is outputted (step S65). When it is contrariwise confirmed in the step S64 that current conduction is not made in the selected memory cell 41, the threshold value of the gate voltage of the selected memory cell 41 is judged to be 1 V, so that "01" as higher significant bit data is outputted (step S66). When it is confirmed in the step S62 that current conduction is not made in the selected memory cell 41, the threshold value of the gate voltage of the selected memory cell 41 is judged to be either 3 V or 5 V, so that a voltage of 4 V is applied next to the control gate of the selected memory cell 41 (step S67) to detect whether current conduction is made in the selected memory cell 41 or not (step S68). When it is confirmed in the step S68 that current conduction is made in the selected memory cell 41, the threshold value of the gate voltage of the selected memory cell 41 is judged to be 3 V, so that "10" as higher significant bit data is outputted (step S69). When it is contrariwise confirmed in the step S68 that current conduction is not made in the selected memory cell 41, the threshold value of the gate voltage of the selected memory cell 41 is judged to be 5 V, so that "11" as higher significant bit data is outputted (step S70). Then, information of lower significant two bits stored in the memory cell 42 is to be read out. In order to read the information, a voltage of 6 V is applied to the gate of the non-selected memory cell 41 (step S71) so that the non-selected memory cell 41 is turned to a current conduction state. Further, a voltage of 2 V is applied to the control gate of the selected memory cell 42 (step S72) and whether a current flows in a corresponding bit line or not is detected by the sense amplifier 5 to thereby detect whether current conduction is made in the selected memory cell 42 or not (step S73). When it is confirmed in the step S73 that current conduction is made in the selected memory cell 42, the threshold value of the gate voltage of the selected memory cell 42 is judged to be either -1 V or 1 V, so that a voltage of 0 V is applied next to the control gate of the selected memory cell 42 (step S74) to detect whether current conduction is made in the selected memory cell 42 or not (step S75). When it is confirmed in the step S75 that current conduction is made in the selected memory cell 42, the threshold value of the gate voltage of the selected memory cell 42 is judged to be -1 V, so that "00" as lower significant bit data is outputted (step S76). When it is contrariwise confirmed in the step S75 that current conduction is not made in the selected memory cell 42, the threshold value of the gate voltage of the selected memory cell 42 is judged to be 1 V, so that "01" as lower significant bit data is outputted (step S77). When it is confirmed in the step S73 that current conduction is not made in the selected memory cell 42, the threshold value of the gate voltage of the selected memory cell 42 is judged to be either 3 V or 5 V, so that a voltage of 4 V is applied next to the control gate of the selected memory cell 42 (step S78) to detect whether current conduction is made in the selected memory cell 42 or not (step S79). When it is confirmed in the step S79 that current conduction is made in the selected memory cell 42, the threshold value of the gate voltage of the selected memory cell 42 is judged to be 3 V, so that "10" as lower significant bit data is outputted (step S80). When it is contrariwise confirmed in the step S79 that current conduction is not made in the selected memory cell 42, the threshold value of the gate voltage of the selected memory cell 42 is judged to be 5 V, so that "11" as lower significant bit data is outputted (step S81). As described above, according to the reading method of this embodiment, data of four bits stored in two memory cells can be read out thoroughly by four times of reading operation. Although the present invention has been described upon the case where multi-valued storage is performed by an EEPROM having floating gate type memory cells, it is to be understood that not only floating gate type memory cells but also other type memory cells such as NMOS type memory cells may be used as memory cells for performing multi-valued storage. The present invention can be also applied to a reading method in the case where multi-valued storage is performed by another storage device such as an EPROM or a PROM than the EEPROM and can be further applied to a reading method in the case where multi-valued storage is performed by a mask ROM in which, for example, the quantity of impurities ion-injected into the channel region of a field-effect transistor is controlled to thereby change the threshold value to obtain the storage state. Although the aforementioned embodiments have shown the case where a storage capacity of two or three bits is given to one memory cell, it is to be understood that the present invention can be applied to the all case where a storage capacity of four values (two bits) or more is given to one memory cell and that the present invention is more effective as the storage capacity increases. According to the reading method of the present invention, the number of times of reading operation subjected to each memory cell in a semiconductor storage device constituted by memory cells each having a storage capacity of four values or more is reduced, so that access time can be shortened.

Claims: A data reading method in a memory device provided with at least one memory cell (61) of a non-volatile type having a cell charge level, said memory cell including a transistor having a gate (69), a drain (63) and a source (64), said method comprising the steps of: (a) sensing said cell charge level of said memory cell; (b) comparing said cell charge level of said memory cell to a first reference; and (c) outputting a first result of comparing said cell charge level of said memory cell to said first reference; characterized by: (d) comparing said cell charge level of said memory cell to a second reference being lower than said first reference if said cell charge level of said memory cell was found less than said first reference as indicated by said first result; (e) comparing said cell charge level of said memory cell to a third reference being higher than said first reference if said cell charge level of said memory cell was found greater than said first reference as indicated by said first result; (f) outputting a second result of comparing said cell charge level of said memory cell to a selected one of said second and third references. A data reading method according to claim 1 wherein said memory cell has a floating gate (67) for storing charge. A data reading method according to claim 1 or 2, where said cell charge level indicates one of n possible states, wherein n is an integer greater than 2, each state corresponding to a predetermined range of charge levels. A data reading method according to claim 3, wherein said cell charge level is representative of a threshold level of said transistor. A data reading method according to claim 3 or 4, wherein a number of references is equal to n-1. A data reading method according to claim 3 or 5, wherein n is equal to four, and steps (c) and (f) comprises the steps of: indicating that said memory cell is in a first state if said cell charge level of said memory cell is less than both said first and second references; indicating that said memory cell is in a second state if said cell charge level of said memory cell is less than said first reference and greater than said second reference; indicating that said memory cell is in a third state if said cell charge level of said memory cell is greater than said first reference and less than said third reference; and indicating that said memory cell is in a fourth state if said cell charge level of said memory cell is greater than both said first and third references. A data reading method according to one of claims 3 to 6, wherein said first reference corresponds to a cell charge level between a n/2 state and a (n/2 + 1) state. A data reading method according to one of claims 3 to 6, wherein said second reference corresponds to a cell charge level between a (n/4) state and a (n/4+1) state. A data reading method according to one of claims 3 to 6, wherein the third reference corresponds to a cell charge level between a (3n/4) state and a (3n/4+1) state. A data reading method according to one of claims 1 to 9, wherein said first and second results are each expressed using a single binary bit. A data reading method according to one of claims 3 to 9, wherein n is equal to four or eight. A data reading method according to claim 1, wherein; said cell charge level of said memory cell is controlled to be one of three or more different values to thereby store data, which indicates one of three or more possible values, in said memory cell, step (b) includes applying a first voltage, which has a value not less than a first value and less than a second value of said three or more different values, to the gate (69) of said transistor to detect whether or not a current flows across the drain (63) and the source (64) of said transistor; the step (d) includes applying a second voltage, which has a value less than said first value, to the gate (69) of said transistor to detect whether or not a current flows across the drain (63) and source (64) of said transistor when a current flows because of application of the first voltage and said three or more different values includes a value less than the first value, and step (e) includes applying a third voltage, which has a value not less than the second value, to the gate (69) of said transistor to detect whether or not a current flows across the drain (63) and sources (64) of said transistor when no current flows in spite of application of the first voltage and said three or more different values includes a value larger than the second value. A data reading method according to claim 12, wherein: said cell charge level of said memory cell is controlled to be one of a number n of different values V th (1) to V th (n) to thereby store data, which indicates one of n possible values, in said memory cell , where n represents an integer equal to or larger than 3; said first voltage has a value not less than V th (m 1 ) and less than V th (m 1 +1), where m 1 represents a maximum of integers not larger than n/2; said second voltage has a value not less than V th (m 2 ) and less than V th (m 2 +1), where m 2 represents a maximum of integers not larger than n/4; and said third voltage has a value not less than V th (m 3 ) and less than V th (m 3 +1), where m 3 represents a maximum of integers not larger than 3n/4. A data reading according to claim 13, wherein: said first voltage has substantially an average value of V th (m 1 ) and V th (m 1 +1): said second voltage V 2 has substantially an average value of V th (m 2 ) and V th (m 2 +1); and said third voltage V 3 has substantially an average value of V th (m 3 ) and V th (m 3 +1). A data reading method according to claim 13, wherein: said cell charge level of said memory cell is controlled to be one of four different values V th (1) to V th (4) to thereby store data, which indicates one of four possible values, in said one memory cell; a first voltage, which has a value not less than V th (2) and less than V th (3), is applied to the gate (69) of the transistor of said memory cell to detect whether or not a current flows across the drain (63) and source (64) of said transistor, a second voltage, which has a value not less than V th (1) and less than V th (2) is applied, to the gate (69) of said transistor to detect whether or not a current flows across the drain (63) and source (64) of said transistor when a current flows because of application of the first voltage; data corresponding to the cell charge level value V th (1) of said memory cell is outputted when a current flows because of application of the second voltage; data corresponding to the cell charge level value V th (2) of said memory cell is outputted when no current flows in spite of application of the second voltage; a third voltage, which has a value not less than V th (3) and less than V th (4) is applied to the gate (69) of said transistor to detect whether or not a current flows across the drain (63) and source (64) of said transistor when no current flows in spite of application of the first voltage; data corresponding to the cell charge level value V th (3) of said memory cell is outputted when a current flows because of application of the third voltage; and data corresponding to the cell charge level value V th (4) of said memory cell when not current flows in spite of application of the third voltage. A data reading method according to claim 15, wherein: said first voltage has substantially an average value of V th (2) and V th (3); said second voltage has substantially an average value of V th (1) and V th (2); and said third voltage has substantially an average value of V th (3) and V th (4). A data reading method according to claim 13, wherein: said cell charge level of said memory cell is controlled to be one of eight different values V th (1) to V th (8) to thereby store data, which indicates one of eight possible values, in said memory cell; a first voltage, which has a value not less than V th (4) and less than V th (5), is applied to the gate (69) of said transistor to detect whether or not a current flows across the drain (63) and the source of (64) of said transistor a second voltage, which has a value not less than V th (2) and less than V th (3), is applied to the gate (69) of said transistor to detect whether or not a current flows across the drain (63) and the source (64) of said transistor when a current flows because of application of the first voltage; a third voltage, which has a value not less than V th (1) and less than V th (2), is applied to the gate (69) of said transistor to detect whether or not a current flows across the drain (63) and the source (64) of said transistor when a current flows because of application of the second voltage; data corresponding to the cell charge level value V th (1) of said memory cell is outputted when a current flows because of application of the third voltage; data corresponding to the cell charge level value V th (2) of said memory cell is outputted when no current flows in spite of application of the third voltage; a fourth voltage, which has a value not less than V th (3) and less than V th (4), is applied to the gate (69) of said transistor to detect whether or not a current flows across the drain (63) and the source (64) of said transistor when no current flows in spite of application of the second voltage; data corresponding to the cell charge level value V th (3) of said memory cell is outputted when a current flows because of application of the fourth voltage; data corresponding to the cell charge level value V th (4) of said memory cell is outputted when no current flows in spite of application of the fourth voltage; a fifth voltage, which has a value not less than V th (6) and less than V th (7) is applied to the gate (69) of said transistor to detect whether or not a current flows across the drain (63) and the source (64) of said transistor when no current flows in spite of application of the first voltage; a sixth voltage, which has a value not less than V th (5) and less than V th (6), is applied to the gate (69) of said transistor to detect whether or not a current flows across the drain (63) and the source (64) of said transistor when a current flows because of application of the fifth voltage; data corresponding to the cell charge level value V th (5) of said memory cell is outputted when a current flows because of application of the sixth voltage; data corresponding to the cell charge level value V th (6) of said memory cell is outputted when no current flows in spite of application of the sixth voltage; a seventh voltage, which has a value not less than V th (7) and less than V th (8), is applied to the gate (69) of said transistor to detect whether or not a current flows across the drain (63) and the source (64) of said transistor when no current flows in spite of application of the fifth voltage; data corresponding to the cell charge level value V th (7) of said memory cell is outputted when a current flows because of application of the seventh voltage; and data corresponding to the cell charge level value V th (8) of said memory cell is outputted when no current flows in spite of application of the seventh voltage. A data reading method according to claim 17, wherein: said first voltage has substantially an average value of V th (4) and V th (5); said second voltage has substantially an average value of V th (2) and V th (3); said third voltage has substantially an average value of V th (1) and V th (2); said fourth voltage has substantially an average value of V th (3) and V th (4); said fifth voltage has substantially an average value of V th (6) and V th (7); said sixth voltage has substantially an average value of V th (5) and V th (6); and said seventh voltage has substantially an average value of V th (7) and V th (8). A data reading method according to claim 12, wherein: said first voltage applying includes applying the first voltage to the gate (69) of said transistor to detect whether or not a current flows across the drain (63) and source (64) of said transistor, thereby comparing the cell charge level of said memory cell to the first voltage; said second voltage applying includes applying, when the cell charge level of said memory cell is smaller than the first voltage, the second voltage to the gate (69) of said transistor to detect whether or not a current flows across the drain (63) and source (64) of said transistor thereby comparing the cell charge level of said memory cell to the second voltage; and said third voltage applying includes applying, when the cell charge level of said memory cell is larger than the first voltage, the third voltage to the gate (69) of said transistor to detect whether or not a current flows across the drain (63) and source (64) of said transistor thereby comparing the cell charge level of said memory cell to the third voltage. A data reading method according to claim 12 or 19, wherein each of said first, second and third voltages has substantially an average value of selected two of said three or more different values. A data reading method according to claim 12 in a memory device provided with at least first and second memory cells (41, 42) connected serially to each other, a cell charge level of each memory cell being controlled to be one of three or more different values to thereby store data, which indicates one of three or more possible values, in said memory cell, wherein: a first voltage, which has a value not less than the first value and less than the second value is applied to the gate of the transistor of said first memory cell and a preset voltage, which has a value larger than a maximum one of said three or more different values, is applied to the gate of the transistor of said second memory cell to detect whether or not a current flows across the serially connected first and second memory cells (41, 42); a second voltage, which has a value less than the first value, is applied to the gate of the transistor of said first memory cell and the preset voltage is applied to the gate of the transistor of said second memory cell to detect whether or not a current flows across the serially connected first and second memory cells (41, 42) when a current flows because of application of the first voltage and the preset voltage and said three or more different values includes a value less than the first value; a third voltage, which has a value not less than the second value, is applied to the gate of the transistor of said first memory cell and the preset voltage is applied to the gate of the transistor of said second memory cell to detect whether or not a current flows across the serially connected first and second memory cells (41, 42) when no current flows in spite of application of the first voltage and the preset voltage and said three or more different values includes a value larger than the second value; a fourth voltage, which has a value not less than the first value and less than the second value, is applied to the gate of the transistor of said second memory cell and the preset voltage is applied to the gate of the transistor of said first memory cell to detect whether or not a current flows across the serially connected first and second memory cells (41, 42); a fifth voltage, which has a value less than the first value is applied to the gate of the transistor of said second memory cell and the preset voltage, is applied to the gate of the transistor of said first memory cell to detect whether or not a current flows across the serially connected first and second memory cells (41, 42) when a current flows because of application of the fourth voltage and the preset voltage and said three or more different values includes a value less than the first value; and a sixth voltage, which has a value not less than the second value is applied to the gate of the transistor of said second memory cell and the preset voltage, is applied to the gate of the transistor of said first memory cell to detect whether or not a current flows across the serially connected first and second memory cells (41, 42) when no current flows in spite of application of the fourth voltage and the preset voltage and said three or more different values includes a value larger than the second value. A data reading method according to claim 21, wherein each of said first to sixth voltages has substantially an average value of selected two of said three or more different voltages. A data reading method according to claim 21 or 22 wherein: said fourth voltage has the same value as that of the first voltage; said fifth voltage has the same value as that of the second voltage; and said sixth voltage has the same value as that of the third voltage. A data reading method according to any one of claims 21 to 23, wherein said serially connected first and second memory cells (41, 42) form a NAND block. A data reading method according to one of claims 1 to 24, wherein: the transistor (61) of the memory cell further has an electric charge accumulating layer (67) for storing data, which indicates one of three or more possible values, by accumulating electric charge; at least one voltage is applied to the gate (69) of said transistor; and a current flowing across the drain (63) and the source (64) of said transistor is detected to thereby detect a value of the data stored in said electric charge accumulating layer (67). A data reading method according to any one of claims 1 to 25, wherein said transistor includes a selected one of EEPROM (electrically erasable programmable read only memory), EPROM (erasable programmable read only memory) and PROM (programmable read only memory). A data reading method according to one of claims 1 to 20, wherein: said memory cell includes first and second transistors (41, 42) connected serially to each other, each transistor further having an electric charge accumulating layer for storing data, which indicates one of three or more possible values, by accumulating electric charge; and a current flowing across the serially connected first and second transistors (41, 42) is detected to thereby detect a value of the data stored in said electric charge accumulating layer of each of said first and second transistors. A data reading method according to claim 27, wherein said serially connected first and second transistors (41, 42) form a NAND block. A data reading method according to any one of claims 1 to 24, wherein: said transistor further has an electric charge accumulating layer which serves as a floating gate, an amount of electric charge accumulated in said electric charge accumulating layer being controlled so as to control a threshold value of said transistor to be one of said three or more different values. A data reading method according to any one of claims 1 and 22 to 24, wherein an amount of impurities implanted into channel regions of a transistor included in said memory cell is controlled so as to control a threshold value of said transistor to be one of said three or more different values. A memory device comprising at least one memory cell (61) of a non-volatile type having a threshold voltage level, said memory cell including a transistor having a gate (69), a drain (63) and a source (64), a sensing circuit for sensing said threshold voltage level of the memory cell, a first reference corresponding to a first threshold voltage level; a first comparing means coupled to said memory cell and to said first reference, said first comparing means for comparing said threshold voltage level of said memory cell to said first reference, and for outputting a first result; a second reference being lower than said first reference and corresponding to a second threshold voltage level; and a third reference being higher than said first reference and corresponding to a third threshold voltage level; characterized by: a second comparing means coupled to said memory cell and a selected one from said second reference and said third reference, said second comparing means for (a) comparing said threshold voltage level of said memory cell to said second reference if said threshold voltage level of said memory cell was found less than said first reference as indicated by paid first result, (b) comparing said threshold voltage level of said memory cell to said third reference if said threshold voltage level of said memory cell was found greater than said first reference as indicated by said first result, and (c) outputting a second result; and a selector circuit coupled for receiving said first result to selectively couple said one of said second reference and said third reference to said second comparing means in response to said first result. A memory device according to claim 31, wherein said memory cell has a floating gate (67) for storing charge. A memory device according to claim 31 or 32, wherein said threshold voltage level indicates one of n possible states, where n is an integer greater than 2, each state corresponding to a predetermined range of charge levels. A memory device according to claim 33, wherein a number of references is equal to n-1. A memory device according to claim 33 or 34, wherein n is equal to four, said memory device further comprises means for indicating: that said memory cell is in a first state if said threshold voltage level is determined by said first and second comparing means as being less than both of said first and second references; that said memory cell is in a second state if said threshold voltage level is determined by said first and second comparing means as being less than said first reference and greater than said second reference; that said memory cell is in a third state if said threshold voltage level is determined by said first and second comparing means as being greater than said first reference and less than said third reference; and that said memory cell is in a fourth state if said threshold voltage level is determined by said first and second comparing means as being greater than both said first and third reference. A memory device according to one of claims 33 to 35, wherein said first reference corresponds to a threshold voltage level between a n/2 state and a (n/2+1) state. A memory device according to one of claims 33 to 35, wherein said second reference corresponds to a threshold voltage level between a n/4 state and a (n/4+1) state. A memory device according to one of claims 33 to 35, wherein said third reference corresponds to a threshold voltage level between a 3n/4 state and a (3n/4+1) state. A memory device according to one of claims 31 to 38, wherein each of said first and second results from the first and second comparing means is expressed using a single binary bit. A memory device according to one of claims 33 to 38, wherein n is equal to four or eight. A memory device according to claim 31, wherein the memory cell (61) is capable of storing data, which indicates one of three or more possible values, by controlling a threshold voltage level of said memory cell to be one of three or more different values, the memory device comprising: a voltage control circuit (3) for applying voltages to the gate (69) of said transistor in accordance with a control signal; a sense amplifier (5) for detecting, as said first or second result, whether or not a current flows across the drain (63) and the source (64) of said transistor when said voltage control circuit applies a voltage to the gate of said transistor; a signal control circuit (6) for receiving an output signal of said sense amplifier and controlling said voltage control circuit to (i) apply a first voltage as said first reference, which has a value not less than a first value and less than a second value of said three or more different values, to the gate of said transistor (ii) apply a second voltage as said second reference, which has a value less than the first value, to the gate of said transistor when a current flows because of application of the first voltage and said three or more different values includes a value less than the first value, and (iii) apply a third voltage as said third reference, which has a value not less than the second value, to the gate of said transistor when no current flows in spite of application of the first voltage and said three or more different values includes a value larger than the second value. A memory device according to claim 41, wherein: said threshold voltage level of said memory cell is controlled to be one of a number n of different values V th (1) values, in to V th (n) to thereby store data, which indicates one of n possible said memory cell, where n represents an integer equal to or larger than 3; said first voltage has a value not less than V th (m 1 ) and less than V th (m 1 +1), where m 1 represents a maximum of integers not larger than n/2; said second voltage has a value not less than V th (m 2 ) and less than V th (m 2 +1), where m 2 represents a maximum of integers not larger than n/4; and said third voltage has a value not less than V th (m 3 ) and less than V th (m 3 +1), where m 3 represent a maximum of integers not larger than 3n/4. A memory device according to claim 42, wherein: said first voltage has substantially an average value of V th (m 1 ) and V th (m 1 +1); said second voltage V 2 has substantially an average value of V th (m 2 ) and V th (m 2 +1); and said third voltage V 3 has substantially an average value of V th (m 3 ) and V th (m 3 +1). A memory device according to claim 42, wherein: said threshold voltage level said memory cell is controlled to be one of four different values V th (1) to V th (4) to thereby store data, which indicates one of four possible values, in said memory cell; said signal control circuit (6) controls said voltage control circuit (3) to apply to a first voltage as said first reference which has a value not less than V th (2) and less than V th (3), to the gate of said transistor; when the first result of the first comparing means indicates that a current flows because of application of the first voltage, said signal control circuit (6) controls said voltage control circuit (3) to apply a second voltage as a said second reference, which has a value not less than V th (1) and less than V th (2), to the gate of said transistor, outputs data corresponding to the threshold voltage level V th (1) of said memory cell when the second result of the second comparing means indicates that a current flows because of application of the second voltage and outputs data corresponding to the threshold voltage level V th (2) of said memory cell when the second result of the second comparing means indicates that no current flows in spite of application of the second voltage; and when the first result of the first comparing means indicates that no current flows in spite of application of the first voltage, said signal control circuit (6) controls said voltage control circuits (3) to apply a third voltage as said third reference, which has a value not less than V th (3) and less than V th (4), to the gate of said transistor, outputs data corresponding to the threshold voltage level V th (3) of said memory cell when the second result of the second comparing means indicates that a current flows because of application of the third voltage and outputs data corresponding to the threshold voltage level V th (4) of said memory cell when the second result of the second comparing means indicates that no current flows in spite of application of the third voltage. A memory device according to claim 44, wherein: said first voltage has substantially an average value of V th (2) and V th (3); said second voltage has substantially an average value of V th (1) and V th (2); and said third voltage has substantially an average value of V th (3) and V th (4). A memory device according to claim 42, wherein: said threshold voltage level of said memory cell is controlled to be one of eight different values V th (1) to V th (8) to thereby store data, which indicates one of eight possible values, in said memory cell; said signal control circuit (6) controls said voltage control circuit (3) to apply a first voltage, which has a value not less than V th (4) and less than V th (5), to the gate of said transistor; when a current flows because of application of the first voltage, said signal control circuit (6) controls said voltage control circuit (3) to apply a second voltage, which has a value not less than V th (2) and less than V th (3), to the gate of said memory cell; when a current flows because of application of the second voltage, said signal control circuit (6) controls said voltage control circuit (3) to apply a third voltage, which has a value not less than V th (1) and less than V th (2), to the gate of said transistor, outputs data corresponding to the threshold voltage level V th (1) of said memory cell when a current flows because of application of the third voltage and outputs data corresponding to the threshold voltage level V th (2) of said memory cell when no current flows in spite of application of the third voltage; when no current flows in spite of application of the second voltage, said signal control circuit (6) controls said voltage control circuit (3) to apply a fourth voltage, which has a value not less than V th (3) and less than V th (4), to the gate of said transistor, outputs data corresponding to the threshold voltage level V th (3) of said memory cell when a current flows because of application of the fourth voltage and outputs data corresponding to the threshold voltage level V th (4) of said memory cell when no current flows in spite of application of the fourth voltage; when no current flows in spite of application of the first voltage, said signal control circuit (6) controls said voltage control circuit (3) to apply a fifth voltage, which has a value not less than V th (6) and less than V th (7), to the gate of said transistor; when a current flows because of application of the fifth voltage, said signal control circuit (6) controls said voltage control circuit (3) to apply a sixth voltage, which has a value not less than V th (5) and less than V th (6), to the gate for said transistor, outputs data corresponding to the threshold voltage level V th (5) of said memory cell when a current flows because of application of the sixth voltage and outputs data corresponding to the threshold voltage level V th (6) of said memory cell when no current flows in spite of application of the sixth voltage; and when no current flows in spite of application of the fifth voltage, said signal control circuit (6) controls said voltage control circuit (3) to apply a seventh voltage, which has a value not less than V th (7) and less than V th (8), to the gate of said transistor outputs data corresponding to the threshold voltage level V th (7) of said memory cell when a current flows because of application of the seventh voltage and outputs data corresponding to the threshold voltage level V th (8) of said memory cell when no current flows in spite of application of the seventh voltage. A memory device according to claim 46, wherein: said first voltage has substantially an average value of V th (4) and V th (5); said second voltage has substantially an average value of V th (2) and V th (3); said third voltage has substantially an average value of V th (1) and V th (2); said fourth voltage has substantially an average value of V th (3) and V th (4); said fifth voltage has substantially an average value of V th (6) and V th (7); said sixth voltage has substantially an average value of V th (5) and V th (6); and said seventh voltage has substantially an average value of V th (7) and V th (8) . A memory device according to claim 41, wherein: said first comparing means applies a first voltage as said first reference, which has a value not less than a first value and less than a second value of said three or more different values, to the gate (69) of said transistor to detect whether or not a current flows across the drain (63) and source (64) of said transistor thereby comparing the threshold voltage level of said memory cell to the first voltage to provide said first result; and said second comparing means includes first means for applying, when the threshold voltage level of said memory cell is smaller than the first voltage and said three or more different values includes a value less than the first value, a second voltage as said second reference, which has a value less than the first value, to the gate (69) of said transistor to detect whether or not a current flows across the drain (63) and source (64) of said transistor thereby comparing the threshold voltage level of said memory cell to the second voltage to provide said second result, and second means for applying, when the threshold voltage level of said memory cell is larger than the first voltage and said three or more different values includes a value larger than the second value, a third voltage as said second reference, which has a value not less than the second value, to the gate (69) of said transistor to detect whether or not a current flows across the drain (63) and source (64) of said transistor thereby comparing the threshold value of the gate voltage of said memory cell to the third voltage to provide said second result. A memory device according to claim 48, wherein said first and second comparing means are constructed of said voltage control circuit (3), said sense amplifier (5) and said signal control circuit (6). A memory device according to claim 41 or 48, wherein each of said first, second and third voltages has substantially an average value of selected two of said three or more different values. A memory device according to claim 41, comprising at least first and second memory cells (41, 42) having transistors connected serially to each other, each memory cell storing data, which indicates one of three or more possible values, and controlling a threshold voltage level of said memory cell to be one of three or more different values, each of the transistors having a gate, a drain and a source, the circuit including; a voltage control circuit (3) for applying voltages to gates of said first and second transistors in accordance with a control signal; a sense amplifier (5) for detecting, as said first or second result, whether or not a current flows across the serially connected transistors of the first and second memory cells when said voltage control circuit applies voltages to the gates of said first and second transistors; a signal control circuit (6) for receiving an output signal of said sense amplifier and controlling said voltage control circuit to (i) apply a first voltage, which has a value not less than a first value and less than a second value of said three or more different values, to the gate of the transistor of said first memory cell and to apply a preset voltage, which has a value larger than a maximum one of said three or more different values, to the gate of the transistor of said second memory cell, (ii) apply a second voltage, as said second reference, which has a value less than the first value, to the gate of the transistor of said first memory cell and apply the preset voltage to the gate of the transistor of said second memory cell when a current flows because of application of the first voltage and the preset voltage and said three or more different values includes a value less than the first value, (iii) apply a third voltage, which has a value not less than the second value, to the gate of the transistor of said first memory cell and apply the preset voltage to the gate of the transistor of said second memory cell when no current flows in spite of application of the first voltage and the preset voltage and said three or more different values includes a value larger than the second value, (iv) apply a fourth voltage, which has a value not less than the first value and less than the second value of said three or more different values, to the gate of the transistor of said second memory cell and apply the preset voltage to the gate of the transistor of said first memory cell, (v) apply a fifth voltage, which has a value less than the first value to the gate of the transistor of the second memory cell and apply the preset voltage to the gate of said first memory cell when a current flows because of application of the fourth voltage and the preset voltage and said three or more different values includes a value less than the first value, and (vi) apply a sixth voltage, which has a value not less than the second value, to the gate of the transistor of said second memory cell and apply the preset voltage to the gate of the transistor of said first memory cell when no current flows in spite of application of the fourth voltage and the preset voltage and said three or more different values includes a value larger than the second value. A memory device according to claim 51, wherein; each of said first to sixth voltages has substantially an average value of selected two of said three or more different voltages. A memory device according to claim 51 or 52, wherein; said fourth voltage has the same value as that of the first voltage; said fifth voltage has the same value as that of the second voltage; and said sixth voltage has the same value as that of the third voltage. A memory device according to any one of claims 51 to 53, wherein said serially connected first and second memory cells (41, 42) form a NAND block. A memory device according to any one of claims 31 to 54, wherein; said transistor further has an electric charge accumulating layer which serves as a floating gate, an amount of electric charge accumulated in said electric charge accumulating layer being controlled so as to control a threshold value of a gate voltage of said transistor to be one of said three or more different values. A memory device according to any one of claims 31 to 54, wherein an amount of impurities implanted into a channel regions of the transistor included in said memory cell is controlled so as to control a threshold voltage level of said transistor to be one of said three or more different values. A memory device according to any one of claims 31 to 54, wherein said memory cell includes a selected one of EEPROM (electrically erasable programmable read only memory), EPROM (erasable programmable read only memory) and PROM (programmable read only memory). A memory device according to one of claims 31 to 54, wherein; said transistor (61) further has an electric charge accumulating layer (67) for storing data, which indicates one of three or more possible values, by accumulating electric charge; and the sensing circuit further comprises detecting means (2 to 6) for detecting a current flowing across the drain (63) and the source (64) of said transistor to thereby detect a value of the data stored in said electric charge accumulating layer (67). A memory device according to claim 58, wherein said detecting means includes; said voltage control circuit (3) for applying at least one voltage to the gate (69) of said transistor in accordance with a control signal; said sense amplifier (5) for detecting a current flowing across the drain (63) and the source (64) of said transistor when said voltage control circuit (3) applies said at least one voltage to the gate (69) of said transistor; and said signal control circuit (6) for receiving an output signal of said sense amplifier (5) and generating said control signal to control said voltage control circuit (3). A data reading method according to any one of claims 1 to 30, wherein the references are constant voltage sources. A memory device according to any one of claims 31 to 59, wherein the references are constant voltage sources. A data reading method according to any one of claims 1 to 30, wherein a plurality of transistors are connected serially to each other, at least one of said plurality of transistors constituting said memory cell. A memory device according to any one of claims 31 to 59, wherein a plurality of transistors are connected serially to each other, at least one of said plurality of transistors constituting said memory cell.

Inventors: HAZAMA KATSUKI, HAZAMA, KATSUKI
Applicants: NIPPON STEEL CORP, NIPPON STEEL CORPORATION
Application year: 1994
Main classification: G11C11
IPC codes: G11C16, G11C17, G11C11