Optically controlled light modulator device

Abstract: An all-optical light modulator device consists of a semiconductor heterostructure with at least one quantum well layer (QW2) and two strained barrier layers (B1, B2), the piezoelectric field E₁ of the barrier layers separating electrons and holes generated by the absorption of a second beam ("control or write beam") of a photon energy higher than the bandgap of the barrier layers, thereby generating an electric field E₂ perpendicular to the layers to modulate the characteristics of a first beam ("read beam") with a photon energy tuned in resonance with the QW lowest exciton line, via the Quantum-Confined-Stark-Effect.

Description: The invention relates to an electromagnetic radiation modulator device consisting of a semiconductor heterostructure and operating according to the principle of the Quantum-Confined-Stark-Effect (QCSE). More specifically the invention relates to an all-optical electromagnetic radiation modulator in which the characteristics of a first beam of electromagnetic radiation is controlled by the electrical field generated by a second beam of electromagnetic radiation. The most efficient light-modulators demonstrated up-to-date are based on the Quantum-Confined-Stark-Effect (QCSE) in semiconductor heterostructures as e.g. described by D.A.B. Miller et al. in Phys. Rev. B 32, 1043 (1985). In this scheme, the multiple quantum well (MQW) segment of the heterostructure is subject to an external electric field. The optical constants in the vicinity of the MQW exciton resonance, such as index of refraction and absorption coefficient, are strongly affected by the presence of the electric field. Thus, a laser beam in resonance with the excitonic transition can be efficiently modulated by the mere action of the external electric field. An essential feature of these devices is that the excitonic resonance to be modulated is the ground state of the whole heterostructure. This avoids unnecessary losses on the read beam and allows for future realistic implementations in a waveguide or in a resonant Fabry-Pérot cavity where excessive losses are detrimental. Another important feature of such devices is that the material choice can be made such that the active OW resonance spans the spectral region from the mid-infrared to the blue wavelengths, including the importance for use in telecommunications wavelength of minimal fiber loss of about 1,55 µm. However, for fabricating QCSE devices electrical contacts have to be provided which can be difficult and time-consuming. Moreover, the need for electrical contacts reduces the device's integrability in a system and the possibility for miniaturization and pixelization. It is therefore an object of the present invention to provide an electromagnetic radiation modulator device which operates according to the principle of the Quantum-Confined-Stark-Effect (QCSE) without the need for electrical contacts. Document EP-A 0 478 060 describes an optically addressable MQW modulator device which operates according to the principle of QCSE. In this device the separation of the photo-generated charge carriers, using an optical write beam, is achieved by varying the thicknesses of the individual quantum wells within the MQW structure. In this way, the separation of the photo-generated charge carriers sets up an electric field which modulates the MQW exciton resonance. An electromagnetic radiation modulator device according to the present invention comprises a semiconductor heterostructure which contains at least a first quantum well layer of a first semiconductor material and two barrier layers of a second semiconductor material on either side of the quantum well layer, the device modulating a first beam of electromagnetic radiation through the influence of an electric field E 2 perpendicular to the layers according to the principle of the Quantum-Confined-Stark-Effect (QCSE), wherein the electric field E 2 is a field to be built up by electrons and holes generated by the absorption of a second beam of electromagnetic radiation and the heterostructure comprises means to separate electrons and holes in opposite directions perpendicular to the layers. In a preferred embodiment of the invention the means to separate the optically generated electrons and holes is a strain induced static electric field E 1 perpendicular to the layers. This static field E 1 can be effectively used to separate the optically generated charge carriers which then build up the electric field E 2 for the QCSE. In a further embodiment of the invention two more quantum well layers are provided symmetrically on both sides of the structure to collect the optically generated charge carriers. The present invention exploits thus also the QCSE but with one major advantage: the electric field necessary for the QCSE is photogenerated. Thus there is no need for electrical contacts. This avoids delicate and time-consuming sample processing, as well as upgrades the device's integrability in a system and possibility for miniaturization and pixelization. In addition, the two-beam character of the device is particularly suitable for certain applications such as image processing. It is worth noting that this device is sensitive and ultrafast. Its optical charging with a CW laser beam of 1 W/cm 2 occurs within µsec, which compares with the response of a SEED (self-electrooptic-effect-device) device for the same power level. Note that there is possibility to make the device response faster, e.g. 1 nsec, at the expense of increasing the power level of the writing beam. In pulsed laser excitation, the charging occurs on the nsec time scale whereas the lifetime of the photogenerated electric field is adjustable around 1 µsec. In the following a description of the principle of the invention and of its preferred embodiments is given in conjunction with the accompanying drawings, in which Fig. 1 shows valence (VB) and conduction band (CB) of a heterostructure elementary cell; Fig. 2a shows valence (VB) and conduction band (CB) of an elementary cell consisting of a III-V-semiconductor-heterostructure; Fig. 2b shows valence (VB) and conduction band (CB) of an elementary cell consisting of a II-VI- semiconductor heterostructure. It is well known e.g. from D.L. Smith et al, in Rev. Mod. Phys. 62, 173 (1990) that in strained semiconductor heterostructures grown along a polar axis, such as for example [111], the lattice-mismatch induced strain generates a large static electric field E 1 along the growth axis. The magnitude of the piezoelectric field can exceed 10 5 V/cm, for rather moderate lattice mismatch strains of ε ≈ 0.7%. The presence of such high piezoelectric fields in strained heterostructures can be exploited, in order to create an efficient all-optical modulator device. The heterostructure is grown along a polar axis and consists of many periods of an elementary cell. A schematic of this cell is depicted in Figure 1. It consists of three quantum wells (QWs) two of which are to be used as carrier collection QWs. In Fig. 1, QW1 and QW3 are the electron and hole collection QWs, respectively. The middle QW2 is the active QW, i.e. the QW of which the optical properties are to be modulated by the presence of stored carriers in QW1 and QW3. The essential feature of this elementary cell is the presence of a piezoelectric field in the barrier layers between QW1 and QW2 (barrier B1) and between QW2 and QW3 (barrier B2). The principle of operation of this device is the following: A control optical beam λ write with photon energy larger than the bandgap of the barrier layers, photogenerates electron-hole pairs throughout the elementary cell. The electrons and holes created at the barrier layers, however, experience the piezoelectric field E 1 which strongly separates them in opposite directions of the barrier layer. For instance, the electrons generated in the barrier layer B1 of Fig. 1 will relax in QW1 whereas the holes in QW2. Similarly, electrons and holes from B2 will pour in QW2 and QW3, respectively. Thus, in QW2 we find equal populations of electrons and holes at all times which allows them to deplete rapidly by radiative recombination occurring on the time scale of τ = 1nsec. This is not the case for an excess electron in QW1, for example. The absence of the corresponding hole due to the filtering action of the barrier layer precludes the possibility of rapid recombination. The same holds for the excess holes in QW3. The end result of these dynamics is an accumulation of electron and hole populations in the collection QWs. The stored charges create an electrostatic field E 2 which modulates the excitonic resonance of the active QW2, through the QCSE. An optical beam λ read , with a photon energy tuned in the vicinity of the QW2 exciton, reads the effect of the control beam on the resonance through the changes in the absorption coefficient and the index of refraction. For making a real device, the following should be considered: (a) All strained layers of the heterostructure should preferably be kept below their respective critical thickness and the strain should preferably be symmetrized within the period. This will avoid the formation of misfit dislocations and allow a large number of periods. (b) The piezoelectric potential should be symmetrized within one period, to avoid a large built-up potential as the number of periods increases. (c) The active QW should preferably be unstrained, thus without a piezoelectric field. The underlying idea here is that a rapid recombination of the carriers in the active QW is necessary as a drainer of the carrier population which could be screening the electric field generated by the collected charge densities in the collection QWs. (d) The piezoelectric barrier which acts as a quantum filter should preferably be absorbing at a photon energy lower than the substrate or the spacer layer separating two periods. This will maximize efficiency by avoiding useless absorption in the spacer layer. (e) The active QW should preferably be the ground state of the whole structure. This is a major advantage as it was pointed out previously. We now give a detailed description of two preferred embodiments of the present invention, namely two particular semiconductor heterostructures, complying with the requirements of the previous section and in addition having the lowest exciton resonance at 1.55 µm. One is made of III-V-semi-conductor material and the other of II-VI-semiconductor material. The two systems are in many ways analogous except that the potential barrier heights are such that in the III-V-heterostructure the holes are much better trapped than the electrons, whereas in the II-VI device the reverse occurs. This means that in designing the sample response, different strategies should be followed in the two systems. The III-V device is grown on (111) or (211)-oriented InP substrates. The heterostructure segment contains many repetitions of the period shown in Fig. 2a. The active QW is In .53 Ga .47 As, lattice matched with InP. Its thickness is adjusted to make the reading wavelength 1.55 µm and is typically ≤ 80 Å. The piezoelectric barriers are InAs .22 P .78 and the collection QWs In .43 Ga .57 As. Their lattice mismatch with InP is + 0.77% and -0.77% and their bandgap at T=300K, 1.07 and 0.82 eV, respectively. Their exact thickness and concentrations are chosen such that the strain and voltage buildup in one period is zero. The critical thickness for each individual layer and for ε ≈ 0.8% should be larger than 700 Å and the piezoelectric field of the order of 10 5 V/cm. The conduction band discontinuity heights are from left to right 213, 78 and 123 meV. For holes, the corresponding values are 307, 172, and 237. These values are estimated neglecting strain. The effect of strain in the dilated QWs is a pushing-down of the electron and heavy-hole levels and a pushing-up of the light-hole level, by about 20 meV. Note that the light hole level is the hole ground state in the collection QWs. In the compressed piezoelectric barriers the opposite occurs. The carrier escape times from the collection QWs give the order of magnitude of the response time of the device. If we neglect tunneling for sufficiently thick piezoelectric barriers, the only efficient escape process at room temperature is thermionic emission. An order of magnitude estimate of the thermionic emission times can be given as follows: For a collection QW thickness of 200 Å and at small photogenerated electric fields, we estimate the electron escape time to be 6 nsec whereas for the light hole 220 nsec. Note, however, that the thermionic emission escape times are strongly dependent on the QW and barrier thickness. For example, if we assume a 400 Å QW and barrier, the escape times are lengthened by a factor of 2000. Therefore, there is possibility to tune by design the time response of the device depending on our needs. The II-VI device as shown in Fig. 2b is grown on (111)- or (211)-oriented Cd .96 Zn .04 Te substrates. The MQW segment is grown coherently on a 2 µm-thick Cd .90 Zn .10 Te buffer layer. The active QW is Cd .50 Hg .50 Te, lattice-matched with Cd .90 Zn 10 Te, and with an energy gap at 0.75 eV. The piezoelectric barriers are a few hundreds Å of CdTe and the collection QWs a quaternary Cd .63 Zn .07 Hg .30 Te. The lattice constant of CdTe is 6.48 Å and its lattice mismatch with Cd .90 Zn .10 Te, +0.62%. The presence of the Zn composition in the quaternary alloy is necessary in order to decrease the lattice constant below the one of Cd .90 Zn .10 Te, and have a lattice mismatch of -0.62%. The energy gap at room temperature of CdTe is 1.51 eV and of the quaternary 1.11 eV. Neglecting the effect of strain, the conduction band discontinuity heights are from left to right 380, 316 and 600 meV. For holes, the corresponding values are 100, 84 and 160. Compared to the III-V example, the situation has been reversed: in the II-VI the electrons are better confined than the holes, indicating longer carrier escape and device response times. We should emphasize, however, that longer response times mean also greater sensitivity, i.e. lower operation laser powers, and they should not be regarded necessarily as a drawback. Finally, notice in Fig. 2 the opposite sign of the piezoelectric field for the same sign of strain in the III-V as opposed to the II-VI device. This is due to the opposite-sign piezoelectric coefficients of II-VI materials compared to the III-V's. The system of coupled rate equations describing our heterostructure in a steady-state photoexcitation experiment reads as follows dn 1 dt = G 1 + G B - Cn 1 p 1 - n 1 τ 0 + N 1 τ 0 h dp 1 dt = G 1 - Cn 1 p 1 - p 1 τ 0 h + N 1 τ 0 dn 2 dt = G 2 + G B - Cn 2 p 2 - n 2 τ e + N 2 τ h dp 2 dt = G 2 + G B - Cn 2 p 2 - p 2 τ h + N 2 τ e dn 3 dt = G 3 - Cn 3 p 3 - n 3 τ 0 + N 3 τ 0 h dp 3 dt = G 3 + G B - Cn 3 p 3 - p 3 τ 0 h + N 3 τ 0 where n i , p i , N i (i = 1, 2, 3) are the electron, hole and exciton densities respectively in the ith QW. The photogeneration carrier density rates in the ith QW are denoted by G i whereas in the piezoelectric barriers by G B . C is the bimolecular exciton formation rate. The electron escape time from a collection QW is τ 0 whereas the light-hole escape time is denoted by τ 0h . The escape times for electrons and heavy-holes in the active QW are τ e and τ h . Finally, the exciton recombination time constant is τ R = 1nsec. Notice the preferential presence of the G B term for electrons in QW1 and for holes in QW3. This is the origin of the large charge densities that can be stored in the collection QWs. The escape times can be roughly estimated as explained for the III-V-example. The numerical integration of the above equations for a given set of time constants is a trivial task. A serious difficulty, however, arises from the fact that these escape times are field dependent. For the purposes of the present report, it is instructive to assume a simple case where τ 0 = τ 0h and τ e = τ h . It is also assumed that these escape times are independent of the electric field. Then the above equations simplify to dQ 1 dt = G B - Q 1 τ 0 dQ 2 dt = - Q 2 τ e dQ 3 dt = G B - Q 3 τ 0 where Q i = abs(n i - p i ) is the charge density in the ith QW. It follows that in the active QW the charge density is always zero, and that in the collection QWs within several time constants τ 0 after the switch-on of the laser field the charge density reaches the values Q 1 = Q 2 = G B τ 0 . Assuming an incident laser power density of 4W/cm 2 of an Argon ion laser, we estimate the photogenerated carrier density rate in a 400 Å-thick piezoelectric barrier layer of absorption coefficient 5000 cm -1 to be G B = 4x10 17 /seccm 2 . For τ 0 = 1 µsec, Q 1 = 4x10 11 /cm 2 . This charge density induces an electric field across the active QW of ≈ 66 kV/cm. In a single piezoelectric QW the photogenerated carriers tend to form a counteracting dipole generating an opposite screening electric field. This has been proposed as an efficient nonlinearity for modulating purposes. However, much larger power densities are needed. For example, one can infer that in order to screen 20% of the 141 KV/cm piezoelectric field, i.e. photogenerate a screening electric field of 25 KV/cm, an incident power density of 3 KW/cm 2 is needed. This value is three orders of magnitude higher than the ones we estimated (even roughly) for the present device. This is most probably due to the fact that in the case of a piezoelectric QW the screening electron-hole pairs are continuously depleted due to recombination on the nsec time scale. As a consequence, the requirements in laser power densities in order to create sufficiently high carrier densities are dramatically increased.

Claims: Electromagnetic radiation modulator device comprising a semiconductor heterostructure which contains a substrate and at least a first quantum well layer (QW2) of a first semi-conductor material and two barrier layers (B1, B2) of a second semiconductor material, one on each side of the first quantum well layer, the device being capable of modulating a first beam of electromagnetic radiation through the influence of an electric field E 2 perpendicular to the layers (QW2, B1, B2) according to the principle of the Quantum-Confined-Stark-Effect (QCSE) said semiconductor heterostructure being arranged to absorb a second beam of electromagnetic radiation, thus generating electrons and holes which build up said electric field E 2 and the semiconductor heterostructure comprising a means for separating said electrons and holes in opposite directions perpendicular to the layers, thus building up the electric field E 2 , characterized in that the means for separating electrons and holes generates an internal static electric field E 1 perpendicular to the semiconductor layers said internal static electric field E 1 being strain-induced piezoelectric field in the barrier layers. The device according to claim 1, characterized in that the strain results from a lattice mismatch between the material of the barrier layers and the substrate material. The device according to claim 1, characterized in that it also comprises means (QW1, QW3) for collecting the optically generated electrons and holes on either side of the heterostructure. The device according to claim 3, characterized in that the means for collecting said optically generated electrons and holes are quantum well layers (QW1, QW3) provided on either side of the heterostructure. The device according to claim 4, characterized in that the quantum well layers (QW1, QW3) are strained, the strain resulting from a lattice mismatch between the semiconductor material of the quantum well layers (QW1, QW3) and the substrate material. The device according to claim 1, characterized in that the photon energy of the second beam is greater than the bandgap energy of the barrier layers. The device according to claim 1, characterized in that the lowest exciton resonance of the first quantum well layer (QW) is the ground state of the whole heterostructure. The device according to anyone of the previous claims, characterized in that each layer material is a compound semiconductor having at least one element from periodic table group III and at least one element from periodic table group V. The device according to claim 8, characterized in that the first beam has a wavelength of 1,55 µm and the first semiconductor material is InGaAs, the second semiconductor material is InAsP and the material of the quantum well layers (QW1, QW3) is InGaAs and the substrate material is InP, the alloy concentrations and layers thicknesses of the quantum well, collection and barrier layers being adjusted such that the first semiconductor material is lattice-matched to the substrate material, the lowest exciton resonance of the first quantum well layer (QW2) is at 1,55 µm, the average strain and piezoelectric voltage is zero within the elementary period and all strained layer thicknesses are kept below their critical thickness. The device according to claim 8, characterized in that the first semiconductor material is GaAs, the second semiconductor material is AlGaInAs (quaternary), the substrate material. AlGaAs and the material of the quantum well layers (QW1, QW3) is GaAsP, the alloy concentrations and layer thicknesses of the collection and barrier layers being adjusted such that the average strain and piezoelectric voltage is zero within the elementary period and all strained layer thicknesses are kept below their critical thickness. The device according to anyone of claims 1 to 7, characterized in that each layer material is a compound semiconductor having at least one element from periodic table group II and at least one element from periodic table group VI. The device according to claim 11, characterized in that the first beam has a wavelength of 1,55 µm and the first semiconductor material is CdHgTe, the second semiconductor material is CdTe and the material of the quantum well layers (QW1, QW3) is CdHgZnTe and the substrate is CdZnTe, the alloy concentrations and layer thicknesses of the quantum well, collection and barrier layers being adjusted such that the first semiconductor material is lattice-matched to the substrate material, the lowest exciton resonance of the first quantum well layer (QW2) is at 1,55 µm, the average strain and piezoelectric voltage is zero within the elementary period and all strained layer thicknesses are kept below their critical thickness. The device according to anyone of the previous claims, the heterostructure being implemented in a waveguide geometry. The device according to anyone of the previous claims, the heterostructure being implemented in a resonant Fabry-Pérot cavity. The use of the device according to anyone of the previous claims, as an optically commanded spatial light modulator, where the second beam is a command beam which contains two dimensional image information or addresses individual pixels of the device. The use of the device according to anyone of the previous claims 1-14, as an all-optical photorefractive quantum well device, the second beam being a command beam which consists of interference fringes and the first beam being diffracted at the fringes. The device according to anyone of the previous claims 1-14, characterized in that the first and second beams are generated by continuous wave or pulsed lasers.

Inventors: PELEKANOS NIKOLAOS THEMELIS, PELEKANOS, NIKOLAOS THEMELIS
Applicants: COMMISSARIAT ENERGIE ATOMIQUE, COMMISSARIAT A L'ENERGIE ATOMIQUE
Application year: 1994
Main classification: G02F1
IPC codes: G02F1, H01S5