Solid state image sensing device and charge transfer method thereof

Abstract: A solid state image sensing device has a photoelectric transfer section (10) for transducing incident light into signal charges, at least first and second charge transfer paths, a charge transferring section (20,50) for transferring the signal charges from the photoelectric transfer section to the first path at a first timing and for transferring the signal charges transferred to the first path to the second path at a second timing and a charge supply section (120) for applying bias charges to the signal charges to be transferred from the first to the second path. In the device, bias charges supplied to the first path is transferred to the second path. Signal charges are transferred to the first path and then to the second path. The signal and the bias charges both transferred to the second path are outputted.

Description: The present invention relates to a solid state image sensing device and to a method for transferring charges in a solid state image sensing device. The invention is applicable to a solid state image sensing device of multiline CCD (charge coupled device) register structure. EP-A-0 553 869 describes a known solid state image sensing device of CCD type and a known method of transferring charges. Recently, with the advent of higher resolution and higher speed image reading devices, a multiline CCD image sensor has become known as an image sensor suitable for the image reading devices. An example of this image sensor is composed of photoelectric transfer elements arranged in a straight line (each element of which corresponds to one pixel), a shift register, two-stage charge transfer sections (registers) composed of a plurality of CCDs, and an output section (buffer). The signal charges generated by the photoelectric transfer elements are transferred to the charge transfer section via a shift gate at a predetermined timing and further transferred to the output section at another predetermined timing for conversion into voltage signals. In this multiline CCD register structure, however, where defects exist in the charge transfer paths between the initial stage register and the succeeding stage register, charges tend to remain behind when being transferred between these registers. These residual charges cause image defects. In addition, there is a tendency for a constant magnitude of charge to remain only when the signal charge exceeds a predetermined level. Fig. 1 of the accompanying drawings shows the relationship between the signal charge generated by the photoelectric transfer section and the output charge outputted after transfer between the two registers, in which 1 denotes the normal charge, 2 denotes the abnormal charge excluding the remaining charge, and 3 denotes the abnormal charge including the remaining charge. As shown in Fig. 1, when the magnitude of the signal charge is small, the relationship between the two has non-linear characteristics, so that it becomes difficult to correct the signal charges through signal processing. It is the object of the present invention to provide a solid state image sensing device of multiline CCD structure, which can correct the signal output easily even if residual charges exist during charge transfer between registers or can apparently eliminate the residual charges. According to a first aspect of the invention, there is provided a solid state image sensing device for transferring charges, comprising: a) photoelectric transfer elements arranged in a straight line for transducing incident light into signal charges; b) at least first and second charge transfer paths arranged in parallel to said photoelectric transfer elements and each including a plurality of CCD elements for transferring the signal charges; c) charge transfer means including a plurality of shift registers each arranged between a respective photoelectric transfer element and a respective CCD element of said first charge transfer path and a plurality of transfer gates each arranged between a respective CCD element of said first charge transfer path and a respective CCD element of said second charge transfer path; d) charge supplying means for applying bias charges to the signal charges to be transferred from said first charge transfer path to said second charge transfer path; and e) control means adapted to control the transfer timings of said shift registers and said transfer gates such that first and second signal charges are transferred, at first and second different timings, to said first and second charge transfer paths respectively from alternate photoelectric transfer elements and adapted to control the first signal charges on the first transfer path to be respectively joined, at a third timing, with portions of said bias charges remaining on CCD elements of said first charge transfer path. According to a second aspect of the invention, there is provided a method of transferring charges in a solid state image sensing device having: photoelectric transfer elements for transducing incident light into signal charges; at least first and second charge transfer paths each including a plurality of CCD elements for transferring the signal charges; charge transfer means including a plurality of shift registers respectively arranged between a photoelectric transfer element and a CCD element of said first charge transfer path and a plurality of transfer gates arranged respectively between a CCD element of said first charge transfer path and a CCD element of said second charge transfer path; and charge supplying means for applying bias charges to the signal charges to be transferred from said first charge transfer path to said second charge transfer path; wherein first and second signal charges are transferred, at first and second different timings, to said first and second charge transfer paths respectively from alternate photoelectric transfer elements and the first signal charges on the first transfer path are respectively joined, at a third timing, with portions of said bias charges remaining on CCD elements of said first charge transfer path. For a better understanding of the invention and to show how the same may be carried into effect, reference will now be made, by way of example, to the accompanying drawings, in which: Fig. 1 is a characteristic diagram showing the relationship between the signal charge and the output charge output after transfer between the registers in the prior art image sensing device; Fig. 2 is a plan view showing a linear image sensor of multiline CCD structure; Fig. 3 is a partial plan view showing a first embodiment of the solid state image sensing device according to the present invention; Fig. 4 is a cross-sectional view taken along a line C - C' in Fig. 3; Fig. 5 is a cross-sectional view taken along a line A - A' in Fig. 3; Fig. 6 is a cross-sectional view taken along a line B - B' in Fig. 3; Figs. 7 to 11 are partial plan views for assistance in explaining the operation of a first embodiment of the solid state image sensing device according to the present invention; Fig. 12 is a charge transfer timing chart of the first embodiment of the solid state image sensing device; Fig. 13 is a characteristic diagram showing the relationship between the signal charge and the output charge output after transfer between the registers in the image sensing device according to the present invention; Figs. 14 to 17 are partial plan views for assistance in explaining the operation of a second embodiment of the solid state image sensing device according to the present invention; Fig. 18 is a charge transfer timing chart of the second embodiment of the solid state image sensing device; Figs. 19 to 24 are partial plan views for assistance in explaining the operation of a third embodiment of the solid state image sensing device according to the present invention; and Fig. 25 is a charge transfer timing chart of the third embodiment of the solid state image sensing device. DETAILED DESCRIPTION OF THE EMBODIMENTS Fig. 2 shows an image sensor of multiline CCD register structure according to the present invention, which is formed on a semiconductor substrate. The image sensor is composed of a photoelectric transfer element line 10 (each element of which corresponds to one pixel), a shift register 20, two stage charge transfer sections (registers) 30 and 60 each composed of a plurality of CCDs, a transfer gate 50, and two output sections (buffers) 40 and 70. Fig. 3 is an enlarged plan view showing a part of the image sensor shown in Fig. 2. In Fig. 3, the shift gate 20 and the transfer gate 50 are connected to dedicated drive pulse lines SH (SH1 and SH2) and TG, respectively. Further, drive pulse lines P1 and P2 are connected alternately to the arranged transfer electrodes of the CCD registers 30 and 60, respectively. Further, as shown in Fig. 3, the drive pulse lines SH1 and SH2 are connected alternately to the arranged electrodes of the shift gate 20. That is, the respective electrodes of the shift gate 20 are arranged and connected alternately to either of the drive pulse lines SH1 or SH2 Further, since the shift gates 20 shown in figures other than Fig. 3 are of the same structure as that shown in Fig. 3, the reference symbols SH1 and SH2 are omitted herein in the other figures. The drive pulse line SH1 is connected to the electrode as arranged alternately along the A - A' line portion shown in Fig. 3, and the drive pulse line SH2 is connected to the electrode as arranged alternately along the B - B' line portion shown in Fig. 3. As shown in Figs. 4 to 6 (which correspond to the cross-sectional views taken along the lines C - C', A - A' and B - B' all shown in Fig. 3), each photoelectric transfer element 10 is formed in an impurity diffusion region formed in a surface of a semiconductor substrate 100. Further, the shift gate 20, the transfer gate 50, and the CCD registers 30 and 60 are composed of electrodes (e.g., formed of polysilicon) formed on the semiconductor substrate 100, respectively. Further, in this embodiment, an input section is composed of a charge input electrode 110 and a charge input drain region 120 both formed in the CCD register 30 to inject fat zero charge (bias charge) to the CCD register 30. The charge input electrode 110 is an electrode formed of polysilicon on the semiconductor substrate 100. The charge input electrode 110 is connected to a drive pulse line IG, and the charge input drain region 120 is connected to a drive pulse line IS. Further, the input section 120 is formed by an impurity diffusion region formed in the surface of the semiconductor substrate 100, which constitutes a kind of photoelectric transfer section for obtaining the fat zero charge on the basis of light incident thereupon. With reference to Figs. 3, 7 to 11 and 12 (timing chart), the operation of the image sensor according to the present invention will be described hereinbelow. First, at time tl, the drive pulse line IG connected to the input section 110 is turned on to inject fat zero charges 30a from the input section 110 to the CCD register 30 (see Fig. 3). Further, at time t2, the drive pulse line TG connected to the transfer gate 50 is turned on to transfer the fat zero charges 30a from the CCD register 30 to the CCD register 60 (see Fig. 7). Further, at this time, where there exists a defect in a charge transfer path (not shown) between the CCD 31 of the CCD register 30 and the CCD 61 of the CCD register 60 (as shown at the middle portions of the two CCD registers in Fig. 7), the fat zero charge 30a is transferred to the CCD register 60 by leaving a remaining charge 30b at the CCD register 30 (as a charge 60a excluding a remaining fat zero charge 30b). After that, at time t3, the drive pulse line SH1 connected to the shift register 20 is turned on to transfer signal charges 30c from the photoelectric transfer elements 10 to the CCD register 30 alternately (see Fig. 8). Further, when there exists a remaining charge 30b, at time t4, the drive pulse line TG connected to the transfer gate 50 is turned on to transfer the signal charges 30c together with the remaining fat zero charge 30b from the CCD register 30 to the CCD register 60 (see Fig. 9), because the remaining fat zero charge 30b still remains at the first CCD register 30. After that, at time t5, the drive pulse line SH2 connected to the shift register 20 is turned on to transfer signal charges 30d from the remaining photoelectric transfer elements 10 to the CCD register 30 alternately (see Fig. 10). Further, at time t6, the signal charges 30d are shifted within the CCD register 30 to join the remaining fat zero charge 30b on the basis of two-phase pulses P1 and P2 (see Fig. 11). The joined charges are outputted through an output buffer (not shown). In the same way, the signal charges 30c are shifted within the CCD register 60 to join the signal charges 30c with the fat zero charge 30a or 60a on the basis of the two-phase pulses P1 and P2 (see Fig. 11). The joined charges are outputted through an output buffer (not shown). As described above, since the signal charges transferred from the photoelectric transfer elements 10 alternately are joined with the fat zero charges and the remaining charges, it is possible to obtain the signal charge (30d + 30b) obtained by adding the normal signal charge 30d and the remaining fat zero charge 30b, the signal charge (30c + 30a) obtained by adding the signal charge 30c and the normal fat zero charge 30a, and the signal charge (30c + 60a) obtained by adding the signal charge 30c and the small fat zero charge 60a, in addition to the normal signal charges 30c and 30d. Fig. 13 shows the relationship between the magnitude of the signal charge and the magnitude of the output charge obtained after transfer between the two CCD registers 30 and 60 at this time; that is, Fig. 13 shows the characteristics showing the dependency of the magnitude of the output charge of the image sensing device upon the magnitude of the signal charge obtained by the photoelectric transfer elements in this embodiment. In Fig. 13, the ordinate indicate the output charge magnitude and the abscissa indicates the signal charge magnitude. In Fig. 13, since the non-linear characteristics are maintained when the signal charge magnitude is small, although the offset rate changes according to the presence or absence of the remaining charges, it is possible to correct the signals easily along the linear characteristics. In Fig. 13, the line 200 designates the output charge having no remaining charge of the register 60; the line 210 designates the output charge having the remaining charge of the register 60; the line 220 designates the output charge having no remaining charge of the register 30; and the line 230 designates the output charge having the remaining charge of the register 30, respectively. A second embodiment of the present invention will be described herein below with reference to Figs. 14 to 18. Further, in the respective embodiments described later, the assumption is made that there exists a defect in the charge transfer path between the CCD 31 (see Fig. 7) of the CCD register 30 and the CCD 61 (see Fig. 7) of the CCD register 60, in the same way as with the case of the first embodiment. The feature of this second embodiment is that the signal charge is joined with the fat zero charge, and after that the joined charges are transferred from the CCD register 30 to the CCD register 60. First, in the same way as explained with reference to Fig. 3, at time t1, the drive pulse line IG connected to the input section 110 and the drive pulse line SH1 connected to the shift register 20 are both turned on to inject the fat zero charges 30a from the input section 110 to the CCD register 30. Further, at time t2, the signal charges 30c of the photoelectric transfer elements 10 are transferred to the CCD register 30 alternately (see Fig. 14). Then, at time t3, the drive pulse line TG connected to the transfer gate 50 is turned on to transfer the signal charges 30c and the fat zero charge 30a from the CCD register 30 to the CCD register 60 (see Fig. 15). At this time, the fat zero charge shown at the middle in Fig. 15 is transferred by leaving the remaining fat zero charge 30b in the CCD register 30. Next, at time t4, the drive pulse line SH2 connected to the shift register 20 is turned on to transfer the signal charges 30d from the photoelectric transfer elements 10 to the CCD register 30 alternately (see Fig. 16). Further, at time t5, the signal charges 30d are shifted within the CCD register 30 on the basis of the two-phase pulses P1 and P2 to join the signal charges 30d with the remaining fat zero charge 30b (see Fig. 17), and then outputted through the output buffer. In the same way, the signal charges 30c are shifted within the CCD register 60 on the basis of the two-phase pulses P1 and P2 to join the signal charges 30c with the fat zero charge 30a (see Fig. 17), and then outputted through the output buffer. In the same way as with the case of the first embodiment, since the signal charges transferred from the photoelectric transfer elements 10 alternately are joined with the fat zero charges and the remaining charges, it is possible to obtain the signal charge (30d + 30b) obtained by adding the normal signal charge 30d and the remaining fat zero charge 30b, the signal charge (30c + 30a) obtained by adding the signal charge 30c and the normal fat zero charge 30a, and the signal charge (30c + 60a) obtained by adding the signal charge 30c and the small fat zero charge 60a, in addition to the normal signal charges 30c and 30d. In this second embodiment, the dependency of the magnitude of the output charge upon the magnitude of the signal charge is the same as shown in Fig. 13. Since the non-linear characteristics are maintained when the signal charge magnitude is small, although the offset rate changes according to the presence or absence of the remaining charge, it is possible to correct the signals easily along the linear characteristics. In the above-mentioned embodiments, to join the signal charges with the fat zero charges, it is possible to generate the fat zero charges by irradiating bias light upon the photoelectric transfer elements. Further, at the register 60 at which the signal charges are joined with the fat zero charges, since the magnitude of the transfer charge is larger than that of the register 30, it is necessary to use the CCD register 60 having a higher maximum charge transfer rate, as compared with that of the CCD register 30. Further, in the case of the first embodiment, it is possible to obtain the real signal charge magnitude by transferring the charges in the CCD registers to the output section in Fig. 7 and further by subtracting the outputted charge from the output charges transferred from the CCD registers in the operation shown in Fig. 11. Further, in the second embodiment, it is possible to obtain the real signal charge magnitude by outputting the charges in the CCD registers to the outside when the signal charges are being transferred from the CCD register 30 to the CCD register 60 as shown in Fig. 15 and then by subtracting the outputted signal charges from the outputted charges transferred in the operation shown in Fig. 17. Further, in the above-mentioned embodiments, the signal charges are transferred once between the CCD registers. However, when the signal charges are transferred several times, it is necessary to retain the remaining charges at the same electrode while the signal charges are transferred between the CCD registers. This case will be described hereinbelow. A third embodiment corresponding to this case will be described hereinbelow with reference to Figs. 19 to 25. The feature of this third embodiment is to provide charge discharging sections 130 and 140 for discharging the charges of the CCD register 60. The charge discharging section 130 is composed of polysilicon electrodes formed on the semiconductor substrate 100 and connected to a drive pulse line OFG. Further, the charge discharging section 140 is composed of impurity diffusion regions formed in the surface of the semiconductor substrate 100 and connected to a drive pulse line OFD. The operation of this third embodiment will be explained hereinbelow. First, at time tl, the drive pulse line IG connected to the input section 110 is turned on to inject the fat zero charges 30a from the input section 110 to the CCD register 30 (see Fig. 19). Then, at time t2, the drive pulse line TG connected to the transfer gate 50 is turned on to transfer the fat zero charges 30a from the CCD register 30 to the CCD register 60 (see Fig. 20). At this time, the fat zero charge at the middle of the CCD register 30 is transferred to the CCD register 60 by leaving the remaining fat zero charge 30b thereat. After that, at time t3, the drive pulse line OFG connected to the charge discharging section 130 is turned on to transfer the fat zero charges 30a of the CCD register 60 to the charge discharging section 140 so that the fat zero charges 30a are removed from the register transfer path (see Fig. 21). Further, at time t4, the drive pulse line SH1 connected to the shift register 2 is turned on to transfer the signal charges of the photoelectric transfer elements 10 to the CCD register 30 alternately (see Fig. 22). Further, at time t5, when there exists a remaining charge, the signal charges 30c are transferred from the CCD register 30 to the CCD register 60 together with the remaining fat zero charge (see Fig. 23). The remaining fat zero charge 30b still remains at the CCD register 30. Next, at time t 6 , the drive pulse line SH2 connected to the shift register 20 is turned on to transfer the signal charges from the remaining photoelectric transfer elements 10 to the CCD registers 30 alternately. After that, at time t 7 , the signal charges 30d are shifted within the CCD register 30 on the basis of the two-phase pulses P1 and P2 to join the signal charge 30d with the remaining fat zero charge 30b (see Fig. 24), and the joined charges are outputted through an output buffer. In the same way, the signal charges 30c are shifted within the CCD register 60 on the basis of the two-phase pulses P1 and P2 and outputted through an output buffer. After the fat zero charge has been transferred from the CCD register 30 to the CCD register 60 as shown in Fig. 20, since the charges of the CCD register 60 are discharged, the charge added to the signal charge is only the remaining fat zero charge, so that it is possible to reduce the magnitude of the charge to be transferred between the CCD registers 30 and 60. Further, since the fat zero charge is not added to the signal charge, the signal charge is not subjected to the influence of noise included in the fat zero charge. Further, instead of the charge discharging section, it is also possible to provide another set of the transfer gate and the CCD register in the vicinity of the CCD register 60 to transfer the fat zero charge to the additional CCD register. As described above, in the present invention, since the fat zero charges are injected to the CCD register and since the remaining signal charges can be kept constant, after the transfer between the two CCD registers, irrespective of the magnitude of the signal charges, it is possible to easily correct the signals even if remaining signal charges are generated. Further, when the remaining charges are discharged, it is possible to eliminate the remaining signal charges.

Claims: A solid state image sensing device for transferring charges, comprising: a) photoelectric transfer elements (10) arranged in a straight line for transducing incident light into signal charges (30c, 30d); b) at least first and second charge transfer paths (30,60) arranged in parallel to said photoelectric transfer elements and each including a plurality of CCD elements for transferring the signal charges (30c, 30d); c) charge transfer means (20,50) including a plurality of shift registers (20) each arranged between a respective photoelectric transfer element (10) and a respective CCD element of said first charge transfer path (30) and a plurality of transfer gates (50) each arranged between a respective CCD element of said first charge transfer path (30) and a respective CCD element of said second charge transfer path (60); d) charge supplying means (110, 120) for applying bias charges to the signal charges to be transferred from said first charge transfer path (30) to said second charge transfer path (60); and e) control means adapted to control the transfer timings of said shift registers (20) and said transfer gates (50) such that first and second signal charges (30d; 30c) are transferred, at first and second different timings (t 5 ,t 4 ; t 4 ,t 3 ; t 6 ,t 5 ), to said first and second charge transfer paths (30,60) respectively from alternate photoelectric transfer elements (10) and adapted to control the first signal charges (30d) on the first transfer path to be respectively joined, at a third timing (t 6 ; t 5 ; t 7 ), with portions (30b) of said bias charges remaining on CCD elements of said first charge transfer path (30). A solid state image sensing device according to Claim 1 wherein said control means is adapted to control said second signal charges (30c) to be respectively joined with bias charges (30a) or portions of bias charges (60a) supplied to and remaining on CCD elements of said second charge transfer path (60). A solid state image sensing device according to Claim 2, wherein said control means is adapted to control said transfer timings for: supplying a bias charge (30a) to the first charge transfer path (30); transferring the bias charge (30a) from the first charge transfer path (30) to the second charge transfer path (60); outputting the bias charge (30a, 60a) from the second charge transfer path (60); transferring the second signal charges (30c) from alternate photoelectric transfer elements (10) to alternate CCD elements of said first charge transfer path (30); transferring the second signal charges (30c) from the first charge transfer path (30) to the second charge transfer path (60) together with a remaining bias charge (30b) that remains after the bias charge (30a) is transferred from the first (30) to the second (60) charge transfer path; transferring the first signal charges (30d) from alternate photoelectric transfer elements (10) to those CCD elements of said first charge transfer path (30) to which said second signal charges (30c) have not been transferred; shifting the first signal charges (30d) on said first charge transfer path (30) to a respective adjacent CCD element to join with a remaining bias charge (30b) that still remains after the remaining bias charge (30b) is transferred from the first (30) to the second (60) charge transfer path together with the second signal charges (30c); and outputting both the first signal charges (30d) and the remaining bias charge (30b) from the first charge transfer path (30). A solid state image sensing device according to Claim 1 or 2, which further comprises discharging means (130, 140) for discharging said bias charge (30a, 60a) from said second charge transfer path (60). A solid state image sensing device according to Claim 1, wherein the second charge transfer path (60) has a higher maximum charge transfer rate than that of the first charge transfer path (30). A solid state image sensing device according to Claim 1, wherein the charge transfer means (20, 50) comprises: a shift register (20) through which the first charge transfer path (30) is electrically connected to the photoelectric transfer elements; and a drive pulse line (SH2) connected to the shift register (20) for supplying drive pulses to the shift register (20) to transfer the first signal charges (30d) from the photoelectric transfer elements (10) to the first charge transfer path (30) at said first timing (t 5 ;t 4 ;t 6 ). A solid state image sensing device according to Claim 1, wherein the charge transfer means (20,50) comprises: a transfer gate (50) through which the first charge transfer path (30) is electrically connected to the second charge transfer path (60); and a drive pulse line (TG) connected to the transfer gate (50) for supplying drive pulses to the transfer gate (50) to transfer the second signal charges (30c) from the first charge transfer path (30) to the second charge transfer path (60) at said second timing (t 4 ;t 3 ;t 5 ). A solid state image sensing device according to Claim 1, wherein said charge supplying means (110,120) includes a drive pulse line (IG) connected to a charge input electrode (110) for supplying drive pulses to the charge input electrode (110) via the drive pulse line (IG) to apply said bias charge (30a) to the signal charges at a fourth timing (t1). A solid state image sensing device according to Claim 4, wherein said discharging means (130, 140) includes a first discharge section (130) composed of at least one electrode formed on a semiconductor substrate (100) on which the solid state image sensing device is formed and a second discharge section (140) composed of at least one impurity diffusion region formed in a surface of the semiconductor substrate (100). A solid state image sensing device according to Claim 9, further comprising a drive pulse line (OFG) connected to said electrode for supplying drive pulses to said electrode to discharge the bias charge (30a, 60a) from the second charge transfer path (60) at a fifth timing (t3). A solid state image sensing device according to Claim 1, further comprising outputting means which is operable to output the bias charges (30a, 60a) transferred to the second charge transfer path (60). A solid state image sensing device according to Claim 11, wherein said outputting means is operable to output the bias charges (30a, 60a) from the second charge transfer path (60) before the second signal charges (30c) are transferred to the second charge transfer path (60), and to subtract the outputted bias charge from a subsequent charge composed of the second signal charge (30c) and the bias charge (30a, 60a) both outputted from the second charge transfer path (60), to obtain a signal output charge. A solid state image sensing device according to Claim 4, wherein said discharging means (130, 140) is operable to discharge the bias charge (30a, 60a) from the second charge transfer path (60) before the second signal charges (30c) are transferred from the first charge transfer path (30) to the second charge transfer path (60). A method for transferring charges in a solid state image sensing device having: photoelectric transfer elements (10) for transducing incident light into signal charges (30c, 30d); at least first and second charge transfer paths (30,60) each including a plurality of CCD elements for transferring the signal charges (30c, 30d); charge transfer means (20,50) including a plurality of shift registers (20) respectively arranged between a photoelectric transfer element (10) and a CCD element of said first charge transfer path (30) and a plurality of transfer gates (50) arranged respectively between a CCD element of said first charge transfer path (30) and a CCD element of said second charge transfer path (60); and charge supplying means (110, 120) for applying bias charges to the signal charges to be transferred from said first charge transfer path (30) to said second charge transfer path (60); wherein first and second signal charges (30d; 30c) are transferred, at first and second different timings (t 5 ,t 4 ; t 4 ,t 3 ; t 6 ,t 5 ), to said first and second charge transfer paths (30,60) respectively from alternate photoelectric transfer elements (10) and the first signal charges (30d) on the first transfer path are respectively joined, at a third timing (t 6 ;t 5 ;t 7 ), with portions (30b) of said bias charges remaining on CCD elements of said first charge transfer path (30). A method of transferring charges according to Claim 14 in which said second signal charges (30c) are respectively joined with bias charges (30a) or portions of bias charges (60a) supplied to and remaining on CCD elements of said second charge transfer path (60). A method of transferring charges according to Claim 15, comprising the following steps: a) supplying a bias charge (30a) to the first charge transfer path (30); b) transferring the bias charge (30a) from the first charge transfer path (30) to the second charge transfer path (60); c) outputting the bias charge (30a, 60a) from the second charge transfer path (60); d) transferring the second signal charges (30c) from alternate photoelectric transfer elements (10) to alternate CCD elements of said first charge transfer path (30); e) transferring the second signal charges (30c) from the first charge transfer path (30) to the second charge transfer path (60) together with a remaining bias charge (30b) that remains after the bias charge (30a) is transferred from the first (30) to the second (60) charge transfer path; f) transferring the first signal charges (30d) from alternate photoelectric transfer elements (10) to those CCD elements of said first charge transfer path (30) to which said second signal charges (30c) have not been transferred; g) shifting the first signal charges (30d) on said first charge transfer path (30) to a respective adjacent CCD element (30) to join with a remaining bias charge (30b) that still remains after the remaining bias charge (30b) is transferred from the first (30) to the second (60) charge transfer path together with the second signal charges (30c) in step e); and h) outputting both the first signal charges (30d) and the remaining bias charge (30b) from the first charge transfer path (30). A method of transferring charges according to Claim 14 or 15, which further comprises the step of discharging the bias charge (30a, 60a) from the second charge transfer path (60) before transferring the second signal charges (30c) from the first transfer path (30) to the second charge transfer path (60). A method of transferring charges according to Claim 14 or 15, wherein before the second signal charges (30c) are transferred to the second charge transfer path (60), the bias charge (30a, 60a) is outputted from the second charge transfer path (60); and the outputted bias charge is subtracted from a subsequent charge composed of the second signal charge (30c) and the bias charge (30a, 60a) both outputted from the second charge transfer path (60), to obtain a signal output charge. A method of transferring charges according to Claim 14 or 15, wherein the bias charge (30a) is transferred from the first charge transfer path (30) to the second charge transfer path (60) before the second signal charges (30c) are supplied to the first charge transfer path (30). A method of transferring charges according to Claim 14 or 15, wherein the bias charge (30a) and the second signal charges (30c) are transferred to the second charge transfer path (60) after the second signal charges (30c) are supplied to the first charge transfer path (30). A method of transferring charges according to Claim 14 or 15, further comprising the step of outputting a remaining bias charge (30b) from the first charge transfer path (30). A method of transferring charges according to Claim 14 or 15, wherein the bias charge (30a, 60a) is outputted from the second transfer path (60) before the second signal charges (30c) are supplied to the first charge transfer path (30). A method of transferring charges according to Claim 14 or 15, wherein the bias charge (30a, 60a) is outputted from the second charge transfer path (60) before the second signal charges (30c) are transferred from the first charge transfer path (30) to the second charge transfer path (60). The method of transferring charges according to Claim 14 or 15, which further comprises the step of outputting through the output means (40, 70) the bias charges (30a, 60a) transferred to the second charge transfer path (60).

Inventors: FUJII KIYOSHI, MONOI MAKOTO, SUZUKI KENJI, FUJII, KIYOSHI, MONOI, MAKOTO, SUZUKI, KENJI
Applicants: TOSHIBA KK, KABUSHIKI KAISHA TOSHIBA
Application year: 1994
Main classification: H04N3
IPC codes: H01L27, H04N5, H04N3