ON-AXIS MASK AND WAFER ALIGNMENT SYSTEM

Abstract: An on-axis through the lens optical alignment system for use in semiconductor manufacturing using step and scan photolithographic techniques. An optical alignment system uses a partially common path with the projection optics (16) optical axis (38) in order to detect alignment targets on a wafer (10) and a mask (20). The relative position of the mask (20) and wafer (10) is detected during a single simultaneous scan, and the mask (20) and wafer (10) are resultantly aligned. This provides advantages over prior art multiple channel off-axis through the lens alignment systems and single channel non-through the lens alignment systems. A detailed optical apparatus (60) is disclosed.

Description: ON-AXIS MASK AND WAFER ALIGNMENT SYSTEM Related Application This is a continuation-in-part of copending U.S. Application No. 08/046,038, filed on April 12, 1993. Field of the Invention The present invention relates generally to semiconductor manufacturing, and more particularly to an optical alignment system used to align a mask and wafer in a step and scan type lithographic device as used in semiconductor manufacturing. Background of the Invention The manufacture of semiconductor circuits or chips having electronic circuits formed thereon is primarily accomplished with photolithographic techniques. During this manufacturing process, successive layers of circuit patterns are formed onto a semiconductor wafer by projecting the image of a mask containing the circuit patterns thereon onto a wafer having a photosensitive resist coating. The feature sizes of the circuit elements formed on the semiconductor wafer are typically in the range of 0.50 microns. This extremely small feature size, in combination with the required multiple layer used in forming a semiconductor chip, necessitates the use of very accurate alignment systems to align the wafer and mask. One such alignment system is disclosed in U.S. Patent No. 4,697,087 entitled "Reverse Dark Field Alignment System for Scanning Lithographic Aligner" issuing to Frederick Y. Wu on September 29, 1987, which is hereby incorporated by reference. Therein disclosed is an alignment system wherein a wafer having a wafer target thereon and a mask having a mask target thereon are aligned with respect to each other. The alignment system has two optical channels or arms used to detect alignment targets in scribe alleys above and below the mask pattern being imaged on the semiconductor wafer. A portion of the light path used in the two optical channels or arms is through the projection optics. This path is not on the optical axis of the projection optics, but is off axis. The optical alignment channels or arms are additionally movable to accommodate different projection field heights. This system is referred to as an off axis through the lens alignment system. While an off axis alignment system has several advantages, it is complex and requires correction due to off axis lateral color aberrations in the projection optics. This adjustment for off axis color aberrations must be periodically recalibrated and adjusted for different optical alignment channel or arm positions. Fig. 1 is a simplified schematic illustration of the alignment system disclosed in U.S. Patent No. 4,697,087. A wafer 10 is movable in both X-Y directions by wafer stage 12. Wafer stage 12 has adjacent and attached thereto an autocalibration detector 14. A mask 20 is attached to a mask stage 22. The mask stage 22 typically moves along a single axis in a plane parallel to that of the movement of wafer stage 12. This is typically in the Y direction. Between the wafer 10 and mask 20 is positioned projection optics 16. The projection optics 16 image the mask 20 onto portions of the wafer 10. The illumination system for imaging the mask 20 onto the wafer 10 is not illustrated and does not form a part of this invention. Also between the mask 20 and the wafer 10 is a beamsplitter 18. Associated with the beamsplitter 18 are two alignment channels. One channel is formed by first channel alignment optics 26, first channel illumination source 28, and wafer target detector 29. The second alignment channel is formed by second channel alignment optics 30, second channel alignment illumination source 32, and wafer target detector 33. The first alignment channel has an optical axis 34 and the second alignment channel has an optical axis 36. Both the alignment channels are off the axis of the projection optics. The optical axis of the projection optics is illustrated by line 38. The alignment channel illumination paths follow a special path through the projection optics corrected at visible alignment wavelengths. Each alignment channel in combination with mask target detector 24 is capable of detecting the location of both wafer and mask alignment targets while the wafer and mask are simultaneously scanned. During a single alignment scan, the relative position between a series of wafer and mask targets located in scribe alleys at both the top and bottom of a field are measured. Multiple wavelengths of the alignment illumination must be optically separated with each color collected on a separate photo detector. The alignment shifts due to off-axis lateral color aberrations are corrected after alignment data is collected. The visible light path of the alignment illumination must be corrected over the full field height. Because the two optical alignment channels are movable to accommodate different field heights, an autocalibration detector 14 must be mounted on the wafer stage and is used to periodically measure the offsets between the visible light alignment channel paths and the actinic exposure projection optics path for different channel positions, and alignment wafer lengths. Mask target detector 24 is used to detect the targets on the mask 20, and may be used in combination with wafer target detectors 29 and 33. The operation of this off-axis through the lens alignment system is controlled by control means 39. Another alignment system is known whereby a stationary optical alignment channel is positioned adjacent the projection optics and is used to scan sequentially for wafer targets and mask targets. Because the path of alignment illumination does not pass through the projection optics, this alignment systems is referred to as a non-through the lens alignment system. This non-through the lens alignment system, therefore, does not have the lateral color aberration problem of the off-axis through the lens alignment system. However, the non-through the lens alignment system cannot simultaneously detect both wafer and mask alignment marks during a single alignment scan. The wafer stage and the mask stage must be sequentially moved to collect alignment data. Therefore, throughput during production is severely affected. Fig. 2 illustrates another prior art alignment system. This optical alignment system is very similar to that disclosed in Fig. 1, with the exception that a single channel non-through the lens optical alignment system is used. The non-through the lens alignment system in Fig. 2 is illustrated by alignment illumination source 40, wafer target detector 41, and alignment optics 42. The single channel alignment system has an alignment optical axis 44. The single channel optical alignment system is mounted adjacent the projection optics 16. The position of wafer targets on wafer 10 is measured when the wafer is moved in position in the field of the alignment system and scanned by movement of wafer stage 12. The position of the mask alignment targets is measured by autocalibration detector or actinic light detector 14 when moved in position by wafer stage 12. Therefore, detection of both wafer and mask targets during a single alignment scan is not possible, and the relative positions of the wafer target detector 41 and the projection optics 16 image must remain stable between sequential measurements. This single off-axis viewpoint also requires that the wafer stage 12 have a high accuracy over a large range of travel and that optical magnification and systems skew be separately measured. The operation of this non- through the lens alignment system is controlled by control means 43. While these and other prior alignment systems are adequate for their intended purposes, there is an ever increasing need for a simpler, more reliable, and more efficient optical alignment system for aligning a wafer and mask during manufacture of semiconductor chips. Summary of the Invention The present invention provides a single channel alignment system that has an optical path partially on the optical axis of the projection optics. A wafer stage capable of holding a semiconductor wafer having wafer targets thereon and a mask stage capable of holding a mask having mask targets thereon are moved in parallel planes. Projection optics having an optical axis are placed between the wafer stage and the mask stage for projecting the image of the mask onto the wafer. The alignment channel having alignment optics and an illumination source is used to illuminate and detect the wafer targets. The illumination from the alignment channel may also be used to detect the mask targets. The optical path of the single channel alignment system is partially coincident with the optical axis of the projection optics. Thereby, a single channel on axis through the lens alignment system is obtained. The mask and wafer can thereby be simultaneously scanned by the alignment system and the mask and wafer alignment can be maintained during scanning and exposure. A control means is used for controlling the relative movement between the wafer and mask stage for maintaining alignment of the mask and wafer during scanning and exposure. Accordingly, it is an object of the alignment system of the present invention to provide a simpler, more accurate alignment system for semiconductor lithography. It is an advantage of the alignment system of the present invention that it does not have to be corrected for off-axis lateral color aberrations. It is a further advantage of the alignment system of the present invention that the complexities of two movable alignment channels are avoided. It is a feature of the alignment system of the present invention that a portion of the alignment illumination path is on the optical axis of the projection optics. It is a further feature of the alignment system of the present invention that detection of both the wafer and mask alignment targets and scanning can occur during a single simultaneous scan of both the wafer and mask. These and other objects, advantages, and features will become readily apparent in view of the following more detailed description. Brief Description of the Drawings Fig. 1 is a schematic illustration of a prior art two channel off-axis optical alignment system. Fig. 2 is a schematic illustration of a prior art non-through the lens optical alignment system. Fig. 3 is a schematic illustration of the optical alignment system of the present invention. Fig. 4 illustrates an embodiment of an optical apparatus which can be used in an on-axis alignment illumination mask and wafer alignment system. Fig. 5 illustrates wafer alignment mark scattering of light in the reversed-dark field optical path. Fig. 6 illustrates a wafer alignment mark scattering the light in angles which are less than an illumination system having a numerical aperture of 0.25. Fig. 7 illustrates a path for visible illumination light specularly reflected from the wafer, and used to back- illuminate the reticle and thereby generate a signal to determine its position relative to the wafer alignment mark. Detailed Description of the Preferred Embodiments Fig. 3 discloses the optical alignment system of the present invention. In Fig. 3, wafer 10 is held by a wafer stage 12. Wafer stage 12 is capable of moving along two axes, X and Y, in a single plane. The wafer stage 12 can also move in rotation, or θ. Attached to wafer stage 12 is an autocalibration detector 14. The autocalibration detector 14 has primarily two functions. The first function is to detect the image of a mask target, and the second function is to provide a target for the alignment system to locate. Mask 20 is held by a mask stage 22. Mask stage 22 is capable of moving along a single axis in a plane parallel to the plane formed by the movement of wafer stage 12. Between the wafer 10 and the mask 20 are projection optics 16 and a beamsplitter 18. The projection optics 16 have an optical axis 38 * The beamsplitter 18 is placed in the path of the optical axis 38. Associated with the beamsplitter 18 is a single optical alignment channel. The optical alignment channel comprises an illumination source 45, wafer target detector 46, and alignment optics 48. Wafer target detector 46 could be positioned elsewhere in the alignment system. The alignment optics 48 have an optical axis 50. A portion of the optical axis 50 coincides with a portion of the optical axis 38 of the projection optics 16. Behind the mask 20 is a mask target detector 24. The movement of the wafer stage 12 and mask stage 22 is controlled by control means 52. The control means 52 also receives signals from the autocalibration detector 14, the mask target detector 24, and the wafer detector 46. The control means 52 controls the relative movement of the wafer stage 12 and mask stage 22 according to the signals received from the autocalibration detector 14, the target detector 24, the wafer stage 12, the mask stage 22, and wafer target detector 46 for aligning the wafer 10 and mask 20. The specific construction of the single channel alignment system may be similar to that disclosed in one of the channels or scan arms in U.S. Patent No. 4,697,087. That is, it may be of the reverse dark field type or other known optical alignment system. In operation, the illumination source 45 and wafer target detector 46 are used to detect targets located on the wafer during scanning. The alignment illumination is projected onto the wafer and reflected or scattered back through the projection optics 16 to the wafer target detector 46 and mask target detector 24. The alignment illumination may be in the visible light range. The alignment illumination has a path partially on the optical axis 38 of the projection optics 16. The mask target detector 24 operates on the axis of the projection optics and is used either to detect the position of wafer targets or both wafer and mask targets. However, in order to use an on axis target detector the mask must have targets at the center of the mask field. The mask targets can be positioned in the vertical kerf at the center of the field between circuit patterns. Therefore, only a small field of visible light corrected path is needed. Alternatively, the relative position between mask targets and selected wafer targets can be measured by the target detector 24 while both the wafer and mask are simultaneously scanned. The single viewpoint of the mask target detector 24 requires that optical magnification and system skew be measured by the autocalibration detector 14. However, the requirement for high accuracy wafer stage 12 movement is minimized. Optionally, mask targets may be measured by scanning the autocalibration detector 14 over the image of the mask targets while using exposure illumination, not shown, thereby detecting the relative position of mask targets and selected wafer targets during sequential scanning. Therein, it can readily be appreciated that the single channel on axis through the lens optical alignment system of the present invention has many advantages over those of prior art alignment systems. For example, throughput is improved over non-through the lens systems by eliminating stage motion required to reposition the stage between sequential scans. Additionally, much of the stability advantages of having a partially common path with the actinic light or exposure illumination used to expose the wafer and the ability to simultaneously make relative mask to wafer alignment measurements is maintained without the added complexity of a two channel off-axis alignment system. Fig. 4 illustrates an embodiment of an optical apparatus 60 which can be used with the previously described on-axis wafer to mask alignment system depicted in Fig. 3. An argon- ion laser 11 emitting spectral lines at 488 nm and 515 nm can serve as an illumination source. One suitable laser is Model No. 85 manufactured by Lexel Laser Corporation. In this embodiment, the laser 11 emits plane-polarized visible light which falls incident on a plane-parallel plate 59. The plate 59 has a chrome-plated surface which includes a mark, for example, an etched cross, which defines an object 61. The cross "x" is oriented so that its lines are in planes at 45° to the plane of Fig. 4 and intersect at the optical axis of the optical apparatus 60. The orientation can be explained by imagining that an x is lying on the plane of the page of Fig. 4 at plate 59 in the same orientation as the numbering and lettering. The x is then lifted off the page by holding the left-hand arms of the x on the page and lifting the right-hand arms by 90 degrees so that the latter arms are standing on the page. This is the orientation of the cross. The center of the x is then on the optical axis, so half the x is buried below the plane of the page in Fig. 4. The entrance pupil of the optical apparatus 60 is set at infinity, and is imaged by a lens 62 to an aperture stop 63 which defines the numerical aperture of the optical apparatus 60. The numerical aperture (N.A.) is, by definition, the sine of the angle the marginal ray makes with the optical axis. This is followed by a cylindrical lens 64. An air- spaced lens doublet 65, 66 then relays the image of the object 61 to a field stop 68 by a partially-reflecting fold mirror 67 which renders the apparatus more compact for packaging. A fold mirror 69 then directs the light through an aberration-correcting lens 70, a tilted plane-parallel plate 71, a dichroic plate beamsplitter 72, after which it coincides with the optical axis of the ultraviolet (UV) projection optics system used to expose a wafer 89. Examples of suitable UV projection optics systems are described in U.S. Patent Nos. 4,953,960, entitled. Optical Reduction System, issuing September 9, 1990 to David Williamson, and pending U.S. Application No. 08/134,505, entitled, Catadioptric Optical Reduction System With High Numerical Aperture, each being hereby incorporated by reference. In one embodiment, the UV projection optics system comprises lens 73, 74, 75, 76, and a polarizing beamsplitter cube made of right angle prisms 77, 79, which are contacted together, hypotenuse-face-to-hypotenuse-face, with a dielectric multilayer coating surface 78 therebetween. A suitable coating for the surface 78 of the beamsplitter can be obtained from several well-known vendors of custom- designed coatings, such as O.C.L.I., Santa Rosa, California or Rocky Mountain Instruments, Longmont, Colorado. The UV projection optics system uses s-polarized light which therefore reflects off the beamsplitter surface 78. In contrast, the visible light emanating from the laser 11 is p- polarized at the beamsplitter surface 78. Therefore, the light is mostly transmitted by the beamsplitter surface 78, to a visible zero-order quarter waveplate 80, to a spherical aberration correction lens 81, and a spherical concave mirror 82. The reflected light then returns through the refracting lens 81 and the quarter-waveplate 80 to the beamsplitter surface 78. However, because the light has now passed through the quarter-waveplate 80 twice, the light is s- polarized. Thus, the light is mostly reflected by the beamsplitter surface 78 and returns along the optical axis of the UV projection optics system to a refracting lens group comprising an UV zero-order quarter-waveplate 83, and then to lens 84, 85, 86, 87, and 88. Upon exiting from this refracting lens group, the light illuminates the surface of the wafer 89 with a small cross-shaped area centered on the optical axis of the UV projection optics system. The optical apparatus 60 described provides a number of features and advantages. The tilted plane-parallel plate 71 reduces or cancels coma caused by the tilted plate dichroic beamsplitter 72. The cylindrical lens element 64 corrects for astigmatism caused by the plates 71 and 72. The lens 62, 65 and 66 act as a two-times reduction relay lens forming an intermediate image at field stop 68. The field stop 68 is conjugate with an image of a reticle 97 (Fig. 7) formed by the UV projection system's visible light path through the elements 80, 81, 82 which further reduce the object 61 by a factor of four. Thus, the final image at the wafer 89 is eight times smaller than the object 61. Mirror 82 is close to the pupil of the optical apparatus 60, that is, it is approximately conjugate with the aperture stop 63. The visible light beam illuminating the wafer 89 has a N.A. of 0.25, and the diameter of the cross-shaped field of view is 500 microns. As shown below, Table 1 lists a prescription for an embodiment of the optical apparatus 60, including the radii, the thicknesses, the materials for the individual lens elements, and the dimensions and locations of the mirrors and the beamsplitter. For brevity, the surfaces of the elements listed in Tables 1-4 are designated with the following abbreviations: an infinite radius of curvature (INF), a flat shape (FLT), a curved surface is convex (CX) , concave (CC) , spherical (SPH) , or cylindrical (CYL) . The shape of apertures are designated as circular (CIR) or rectangular (REC) . Suitable materials for the various lens are fused silica (SILICA) or optical grade glass which can be obtained from various well known manufacturers. For example, Heraeus Amersil of Sayreville, New Jersey and Corning Glass Works of Corning, New York, manufacture fused silica glass; Schott Optical Glass of Duryea, Pennsylvania manufactures optical glass designation BK7 (glass column in the tables) ; and Ohara Optical Glass of Somerville, New Jersey also supplies the glass designation BSM16C (Table 1 element 65) ; which are suitable materials for the elements indicated in the Tables 1-4. TABLE 1 APERTURE SURFACE DESCRIPTION DESCRIPTION DIMENSION THICKNESS OR ELEMENT SURFACE SEPARATION X Y NO NO. RADIUS SHAPE (mm) (mm) SHAPE MATERIAL 61 OBJECT INF FLT 0.0000 61 1 INF FLT 2.5000 4.000 CIR BK7 61 2 INF FLT 31.2669 4.103 CIR 62 3 59.503 CX SPH 8.0000 6.063 CIR BK7 62 4 INF FLT 108.8600 6.111 CIR 63 Pupil Stop 4.8360 7.350 64 5 INF FLT 8.0000 7.524 CIR BK7 §4 6 -316 741 ex ςγ 51.2831 7.942 CIR TABLE 1 APERTURE SURFACE DESCRIPTION DESCRIPTION DIMENSION THICKNESS OR ELEMENT SURFACE SEPARATION X Y NO NO. RADIUS SHAPE (mm) (mm) SHAPE MATERIAL 65 7 INF FLT 6.0000 12.023 CIR BSM16C 65 8 -23.700 CX SPH 2.7672 12.277 CIR 66 9 -20.090 CC SPH 4.0000 11.560 CIR PBH4 66 10 -30.314 CX SPH 25.0000 12.055 CIR 67 11 INF FLT •66.2480 12.764 CIR REFL 68 Field Stop •86.8765 2.000 69 12 INF FLT 50.0000 17.480 CIR REFL 70 13 -63.448 CC SPH 13.1764 18.063 CIR BK7 70 14 -57.496 CX SPH 152.2223 20.257 CIR 84.000 71 15 INF FLT 42.4242 126.000 REC SILICA 84.000 71 16 INF FLT 70.0000 126.000 REC 140.000 72 17 INF FLT 42.4242 144.000 REC SILICA 140.000 72 18 INF FLT 69.3746 144000 REC 73 19 233.606 CX SPH 33.7272 173.766 CIR SILICA 73 20 -762.618 CX SPH 30.1563 170.254 CIR 74 21 -372.060 CC SPH 11.8800 154.966 CIR SILICA 74 22 183.034 CC SPH 8.2372 147.388 CIR 75 23 236.499 CX SPH 30.1726 147.948 CIR SILICA 75 24 -601.730 CX SPH 6.1432 145.994 CIR 76 25 478.820 CX SPH 11.8800 140.566 CIR SILICA 76 26 129.986 CC SPH 27.1490 132.422 CIR 142.560 77 27 INF FLT 71.2800 142.560 REC SILICA 78 28 INF FLT 0.0000 53.351 CIR 78 28 INF FLT 71.2800 53.351 CIR SILICA 142.560 79 29 INF FLT 2.0000 142.560 REC 80 31 INF FLT 10.0000 59.276 CIR BK7 βo 32 INF FLT 89940 60.059 CIR TABLE 1 APERTURE SURFACE DESCRIPTION DESCRIPTION DIMENSION THICKNESS OR ELEMENT SURFACE SEPARATION X Y NO NO. RADIUS SHAPE (mm) (mm) SHAPE MATERIAL 81 33 -97.941 CC SPH 5.0382 60.567 CIR SILICA 81 34 -97.548 CX SPH 2.5000 61.935 CIR 82 35 -327.218 CC SPH -2.5000 62.615 CIR REFL 81 36 -97.548 CX SPH -5.0382 61.009 CIR SILICA 81 37 -97.941 CC SPH -8.9940 59.159 CIR 80 38 INF FLT -10.0000 57.906 CIR BK7 80 39 INF FLT -2.0000 56.054 CIR 142.560 79 40 INF FLT -71.2800 142.560 REC SILICA 201.580 78 41 INF FLT 60.4000 142.560 REC REFL 142.560 79 42 INF FLT 1.9800 142.560 REC 83 43 INF FLT 4.4550 96.507 CIR SILICA 83 44 INF FLT 1.1880 95.382 CIR 84 45 139.982 CX SPH 12.9618 91.934 CIR SILICA 84 46 4972.000 CC SPH 1.1880 89.302 CIR 85 47 96.497 CX SPH 18.3356 81.718 CIR SILICA 85 48 491.665 CC SPH 1.1880 73.084 CIR 86 49 138.503 CX SPH 15.3530 68.032 CIR SILICA 86 50 76.880 CC SPH 2.9394 52.763 CIR 87 51 137.200 CX SPH 18.6846 51.962 CIR SILICA 87 52 547.846 CC SPH 0.1980 38.194 CIR 88 53 141.008 CX SPH 6.0885 36.750 CIR SILICA 88 54 291.430 CC SPH 4.0000 31.846 CIR 89 IMAGE INF FLT 0.503 Fig. 5 illustrates that when a wafer alignment mark scatters visible light some of the resulting paths will be at angles greater than the N.A. of the visible illumination system but nevertheless less than the N.A. of the UV projection system. Light falling in this range is referred to as in the "dark field" or, more properly, "reversed dark- field" because it has the opposite effect of the illumination technique used in dark-field microscopy. In the embodiment illustrated in Fig. 5, the illumination system N.A. is 0.25 and projection optics system N.A. is 0.6. Fig. 5 illustrates visible light rays corresponding to a N.A. of 0.6 as they leave the wafer 89 and pass through the UV projection optics system lens 88, 87, 86, 85, 84 and UV quarter-waveplate 83. Because the wavelength of visible light is approximately double that of the radiation in the UV region, the UV quarter-wave plate 83 functions as an eighth- waveplate for visible light. Thus, the s-polarized visible light incident on the wafer 89 is converted to approximately circularly polarized light after two passages through the UV quarter waveplate 83. When such light is incident again on the beamsplitter surface 78 of the beamsplitter cube 77, 79, a proportion of the light is reflected from the surface 78 and leaves the prism 79 outside the clear aperture of the visible elements 80, 81 and 82. Four detectors are preferably placed in a location 90, which is close to the pupil of the system, and corresponds to the direction of light scattered from the two arms of the wafer alignment cross at 45 degrees to the plane of Figs. 4 and 5. Table 2 lists a suitable optical prescription for the elements between the prism 79 and the detector(s) at location 90 outside of lens 80, 81 and 82. TABLE 2 RADIUS OF CURVATURE APERTURE DIAMETER ELEMENT THICKNESS NUMBER FRONT BACK (mm) FRONT BACK 79 INF INF 23.880 90 INF 142.56 Fig. 6 illustrates one embodiment where the path for light scattered from an alignment mark at the wafer 89 is at angles less than the illumination system N.A. of 0.25. The light travels through the optical apparatus 60 in reverse sequence, namely, first through lens 88, 87, 86, 85, 84, the quarter waveplate 83, the prism 79, the surface 78, the prism 79, the quarter waveplate 80, lens 81, mirror 82, lens 81, quarter waveplate 80, the prism 79, the surface 78, the prism 77, the lens 76, 75, 74, 73, and exits the UV projection optics system through the dichroic beamsplitter 72, and from there to the tilted plate 71, the lens 70, and the mirror 69. The light then passes through a field stop 68 at an intermediate image plane. The field stop 68 blocks any defocused ghost images from light reflected by any refracting surfaces between the field stop 68 and the wafer 89. Approximately 10% of the light intensity is transmitted by the partially reflecting mirror 67, and passes through a single lens 91 which forms an image of the optical apparatus's pupil at a detector plane 92. A detector (not shown) is disposed in the detector plane 92 to receive the so-called bright field signal from an alignment mark on the wafer 89. Suitable detectors include Hamamatsu S3590-01 Reverse Dark Field Signal Detectors and Hamamatsu S-3071 Brief Field Wafer Signal Detectors. Although rarely needed, this bright field signal can be used when the alignment mark on wafer 89 is not clearly visible in the dark-field system, such as when the mark is applied on top of a very rough, grainy metallic substrate. Table 3 provides a prescription for optical elements arranged between the partially reflecting mirror 67 and the detector plane 92. TABLE 3 RADIUS OF APERTURE CURVATURE DIAMETER ELEMENT FRONT BACK THICKNESS NUMBER (mm) (mm) (mm) FRONT BACK GLASS 67 INF INF -11.3120 12.7797 19.645 BK7 -21.2462 6 91 -20.0900 CX INF - 8.0000 12.6385 11.548 BK7 -33.1727 9 92 INF 4.0875 Fig. 7 shows the path of visible illumination light that is specularly reflected from the surface of the wafer 89, and then used to back-illuminate the reticle 97 (Fig. 7) and thereby generate a signal to determine its position relative to the alignment mark on wafer 89. This light follows the same path through the lens 88, 87, 86, 85, 84, the quarter- waveplate 83, the prism 79, the surface 78, the prism 79, the elements 80, 81, the mirror 82, the elements 81, 80, the prism 79, the surface 78, the prism 77, the lens 76, 75, 74, and 73. However, a proportion of the intensity of the light is reflected by a dielectric-multilayer-coated surface on the tilted plane-parallel plate 72, to remain in the UV projection optics system path through lens 93, 94, 95 and 96 to the reticle 97. A suitable coating for the dielectric- multilayer-coated surface can be obtained from several well- known vendors of custom-designed coatings, such as O.C.L.I., Santa Rosa, California or Rocky Mountain Instruments, Longmont, Colorado. The light illuminates a clear area in the chrome of the reticle 97, passing through the reticle 97 into the UV illumination system's lens 98, before being reflected out of the UV illumination system's path by a dichroic beamsplitter 99. From there a lens 100 forms a real exit pupil at plane 101, wherein is placed a detector 102 for a reticle signal, such as Hamamatsu S-3071 Reticle Signal Detectors. Table 4 shows the optical prescription between elements 72 and 101. TABLE 4 APERTURE RADIUS OF CURVATURE DIAMETER THICKNESS Element/ ELEMENT NUMBER FRONT BACK Air FRONT BACK GLASS 72 INF INF -119.4669 176.7540 REFL 93 -627.0100 CX 417.6020 CX -28.7417 181.126 180.198 SILICA - 2.9700 0 0 94 -265.3000 CX -177.6830 CC -17.5000 170.790 160.462 SILICA -101.8882 0 0 95 -290.3110 CX -446.2740 CC -19.1566 142.654 137.994 SILICA -19.9011 0 0 96 -132.9850 CX -126.7060 CC -16.8300 128.916 120.422 SILICA -62.7159 0 5 97 INF INF -10.0000 110.000 110.000 SILICA -70.0000 0 0 98 -448.3027 CX 200.4730 CX -35.4500 50.0000 50.0000 SILICA -20.0000 99 INF INF -25.0000 50.0000 70.7000 SILICA 99 INF INF 25.0000 70.7000 50.0000 REFL 20.0000 100 50.0000 CX INF 15.0000 20.4501 19.1901 BK7 59.1645 101 INF 11.1000 While several embodiments have been illustrated and described, it should be clear that various modifications may be made without departing from the spirit and scope of this invention.

Claims: WHAT IS CLAIMED IS: 1. An alignment system for use in aligning a mask and wafer in lithography comprising: a wafer stage movable in a first plane; a mask stage movable in a second plane, said first and second planes being substantially parallel; projection optics positioned between said wafer stage and said mask stage, said projection optics having an optical axis; a beamsplitter placed in the path of the optical axis of said projection optics; a source of alignment illumination, the alignment illumination having a path a portion of which is on said optical axis; alignment optics capable of projecting a portion of the alignment illumination on the wafer; first detector means, associated with said source of alignment illumination, for detecting illumination reflected from the wafer; second detector means for detecting a portion of the mask; and control means, coupled to said wafer stage, said mask stage, said first detector means, and said second detector means, for controlling the relative movement between said wafer stage and said mask stage, whereby the mask and wafer are aligned. 2. An alignment system as in claim 1 wherein said second detector means are on the optical axis of said projection optics. 3. An alignment system as in claim 1 wherein said second detector means are attached to said wafer stage. 4. An alignment system as in claim 1 wherein said source of alignment illumination produces light in the visible range. 5. An alignment system as in claim 1 wherein said alignment optics produce a reverse dark field image. 6. An alignment system for use in aligning a mask and wafer in lithography comprising: a wafer stage movable in a first plane; a wafer placed on said wafer stage, said wafer having wafer targets thereon; a mask stage movable in a second plane, the first and second planes being substantially parallel; a mask placed on said mask stage, said mask having mask targets thereon; projection optics positioned between said wafer stage and said mask stage, said projection optics having an optical axis; a beamsplitter placed in the path of the optical axis of said projection optics; a source of alignment illumination, the alignment illumination having a path a portion of which is on said optical axis; alignment optics capable of projecting the alignment illumination on the mask and wafer targets; wafer target detector means for detecting and locating the wafer targets; mask target detector means for detecting and locating the mask targets; and control means, coupled to said wafer stage, said mask stage, said wafer target detector means, and said mask target detector means, for controlling the relative movement between said mask and said wafer, whereby the mask and wafer are aligned. 7. An alignment system as in claim 6 wherein said mask target detector means are on the optical axis of said projection optics. 8. An alignment system as in claim 6 wherein said mask target detector means are attached to said wafer stage. 9. An alignment system as in claim 6 wherein said source of alignment illumination produces light in the visible range. 10. An alignment system as in claim 6 wherein said alignment optics produce a reverse dark field image. 11. An alignment system as in claim 1 wherein said alignment optics capable of projecting a portion of the alignment illumination on the wafer comprises: a plane-parallel plate with a transparent cross etched on its chrome-plated surface; a reduction relay system; an aberration-correcting lens group; a tilted plane-parallel plate; a dichroic plate beamsplitter; a projection optics whose optical axis coincides with the cross on the plane-parallel plate, the reduction relay and aberration-correcting lens group. 12. An alignment system as in claim 1 wherein said first detector means for detecting illumination reflected from the wafer comprises: means for detecting light reflected at a numerical aperture less than said illumination numerical aperture; means for detecting light reflected at a numerical aperture greater than said illumination numerical aperture. 13. An alignment system as in claim 12 wherein said means for detecting light reflected at a numerical aperture less than said illumination numerical aperture comprises: a projection optics; a dichroic plate beamsplitter; an aberration-correcting lens group; a field stop; a beamsplitter; a pupil relay lens group; a detector placed at a plane conjugate with said projection optics pupil. 14. An alignment system as in claim 12 wherein said means for detecting light reflected at a numerical aperture greater than said illumination numerical aperture comprises: a projection optics; a beamsplitter within said projection optics; detectors placed at a plane conjugate with the pupil plane of said projection optics. 15. An alignment system as in claim 1 wherein said second detector means for detecting a portion of the mask comprises: a projection optics; a transparent area on said mask; a beamsplitter; a pupil relay lens group; a detector placed at a plane conjugate with the pupil plane of said projection optics. 16. An alignment system for use in aligning a mask and wafer in photolithography comprising: a wafer stage movable in a first plane; a mask stage movable in a second plane, said first and second planes being substantially parallel; projection optics positioned between said wafer stage and said mask stage, said projection optics having a projection optical axis; a beamsplitter placed in the path of the projection optical axis; a source of alignment illumination, the alignment illumination having a path a portion of which is on the projection optical axis; alignment optics capable of projecting a portion of the alignment illumination on the wafer, said alignment optics having an alignment optical axis intersecting said projection optical axis; a dichroic plate beamsplitter, said dichroic plate beamsplitter placed at the intersection of the alignment optical axis and the projection optical axis; first detector means, associated with said source of alignment illumination, for detecting illumination reflected from the wafer; second detector means for detecting a portion of the mask; and control means, coupled to said wafer stage, said mask stage, said first detector means, and said second detector means, for controlling the relative movement between said wafer stage and said mask stage, whereby the mask and wafer are aligned. 17. An alignment system for use in aligning a mask and wafer in photolithography as in claim 16 wherein: said projection optics are ultraviolet projection optics; and said source of alignment illumination provides light in the visible wavelength range. 18. An alignment system for use in aligning a mask and wafer in photolithography as in claim 17 further comprising: a plane-parallel plate following said dichroic plate beamsplitter.

Inventors: GALBURT DANIEL N, WILLIAMSON DAVID M, GALBURT, DANIEL, N., WILLIAMSON, DAVID, M.
Applicants: GALBURT DANIEL N, SVG LITHOGRAPHY SYSTEMS INC, WILLIAMSON DAVID M, GALBURT, DANIEL, N., SVG LITHOGRAPHY SYSTEMS, INC., WILLIAMSON, DAVID, M.
Application year: 1994
Main classification: G01B11
IPC codes: G01B11, G03F7, G03F9, H01L21