Method for programming redundancy registers in a column redundancy integrated circuitry for a semiconductor memory device

Abstract: A method for programming redundancy registers in a column redundancy integrated circuitry for a semiconductor memory device with columns of memory elements grouped together to form portions of a bidimensional array of memory elements, the column redundancy circuitry comprising at least one plurality of non-volatile memory registers (RR1-RR4) each one associated to a respective redundancy column of redundancy memory elements and each one programmable to store an address of a defective column and an identifying code (MCS7-MCS10) for identifying the portion of the bidimensional array to which the defective column belongs, provides for supplying each non-volatile memory register (RR1-RR4) with column address signals (CABUS) and with a first subset (R1-R4) of row address signals (RABUS), which when one of the non-volatile memory registers (RR1-RR4) is to be programmed carry the address of a defective column and said identifying code (MCS7-MCS10) respectively, and for activating one signal of a second subset (R5-R8) of the row address signals (RABUS), supplied to programming selection means (6), for selecting one respective non-volatile memory register (RR1-RR4) of said plurality to cause the data carried by the column address signals (CABUS) and by the first subset (R1-R4) of the row address signals to be programmed into said one respective non-volatile memory register (RR1-RR4).

Description: The present invention relates to a method for programming redundancy registers in a column redundancy integrated circuitry for a semiconductor memory device, and to a column redundancy integrated circuitry actuating such method. Semiconductor memory devices are generally organized in a bidimensional array (memory matrix) wherein the single memory elements are located at the intersection of rows ("word lines") and columns ("bit lines") of the matrix: to access a given memory element, it is necessary to select the word line and the bit line at the intersection of which said memory element is located; to this purpose, the memory address bus is divided into row and column address signals, which are decoded independently. In byte- or word-organized memories, having a data bus comprising respectively eight or sixteen bits, each bit in the data bus is associated to a portion of the memory matrix which comprises a group of said bit lines; each logic configuration of the column address signals causes the simultaneous selection of one bit line in each group. Each group of bit lines is associated to a respective sensing circuitry for reading the information stored in the memory matrix elements which belong to said portion of the memory matrix. It is known that in the manufacture of semiconductor memories defects are frequently encountered that afflict a limited number of memory elements in the memory matrix. The reason for the high probability of defects of this type resides in that in a semiconductor memory device the greatest part of the chip area is occupied by the memory matrix; moreover, it is in the memory matrix, and not in the peripheral circuitry, that the manufacturing process characteristics are usually pushed to limits. In order to avoid that the presence of a limited number of defective memory elements on many millions forces the rejection of the entire chip, and therefore to increase the manufacturing process yield, the technique is known of providing for the manufacture of a certain number of additional memory elements, commonly called "redundancy memory elements", to be used as a replacement of those elements that, during testing of the memory device, prove defective; the selection circuits, with which the integrated component must necessarily be provided, and which allow the above mentioned functional replacement of a defective memory element with a redundancy memory element are indicated as a whole with the name of "redundancy circuitry", while the set of redundancy memory elements and circuitry is defined for short as "redundancy". The redundancy circuitry comprises programmable non-volatile memory registers (redundancy registers) suitable to store those address configurations corresponding to the defective memory elements; such registers are programmed once and for all during the memory device testing, and must retain the information stored therein even in absence of the power supply. In practical implementations of redundancy in memory devices, both word lines and bit lines of redundancy memory elements are generally provided in the memory matrix; each redundancy word line or bit line is associated to a respective redundancy register, wherein the address of a defective word line or bit line is stored so that, whenever the defective word line or bit line is addressed, the corresponding redundancy word line or bit line is selected. Each redundancy register comprises programmable non-volatile memory cells wherein the address of a defective word- or bit-line can be programmed; each one of such memory cells must comprise at least one programmable non-volatile memory element, such as a fuse or a floating-gate MOSFET, a load circuit for reading the information stored therein, and a program load circuit for the programming of the memory element according to the logic state of a respective address bit in the row or column address signal set. In the European Patent No. EP-A-0 655 743 a program load circuit for the programming of a memory cell in a non-volatile memory register (such as a redundancy register) is described thanks to which the datum to be programmed into the memory element of the memory cell can be directly supplied by one of the address signal lines already present in the memory device and supplying the decoding circuitry, without the need of generating additional signals. In the European Patent No. EP-A-0 661 636 a redundancy circuitry for a byte- or word-organized memory device is described wherein each redundancy register not only stores the column address of a defective bit line, but also an identifying code for identifying the portion of the memory matrix wherein said defective bit line has been found. Thanks to this, when a defective bit line in a given matrix portion is found it can be individually redunded by a redundancy bit line, without causing the replacement to occur for all the bit lines in the remaining matrix portions and having the same column address of the defective bit line. When however a redundancy register is to be programmed to store the address of a defective bit line, it is necessary to select the redundancy register among all those available in the redundancy circuitry, and to supply it not only with the column address signals, but also with signals carrying the identifying code of the memory matrix portion to which the defective bit line belongs. In view of the state of the art described, the main object of the present invention is to provide a method for programming redundancy registers in a column redundancy integrated circuitry of the type described in the European Patent No. EP-A-0 661 636, which makes use as far as possible of signal lines already existent in the memory device for different purposes, without the need of generating on-chip dedicated signals and thus minimizing the memory device chip size. Another object of the present invention is to realize a column redundancy integrated circuitry actuating the above mentioned method. According to the present invention, such main object is attained by means of a method for programming redundancy registers in a column redundancy integrated circuitry for a semiconductor memory device with memory elements located at the intersection of rows and columns of at least one bidimensional array of memory elements, the columns being grouped together to form portions of the bidimensional array, the column redundancy circuitry comprising at least one respective plurality of non-volatile memory registers each one associated to a respective redundancy column of redundancy memory elements and each one programmable to store an address of a defective column and an identifying code for identifying the portion of the bidimensional array to which the defective column belongs, characterized in that it provides for supplying each non-volatile memory register with column address signals and with a first set of signals, constituting a first subset of a set of row address signals, which when one of the non-volatile memory registers is to be programmed carry the address of a defective column and said identifying code respectively, and for activating one signal of a second set of signals, supplied to programming selection means and constituting a second subset of the set of row address signals, for selecting one respective non-volatile memory register of said plurality to cause the data carried by the column address signals and by the first set of signals to be programmed into said one respective non-volatile memory register. According to the present invention, the other object is attained by means of a column redundancy integrated circuitry for a semiconductor memory device, characterized in that it comprises first means and second means for supplying each non-volatile memory register respectively with column address signals and with said first set of signals, constituting a first subset of a set of the row address signals, which when one of the non-volatile memory registers is to be programmed carry the address of a defective column and said identifying code respectively, and in that it further comprises programming selection means supplied with the second set of signals, constituting the second subset of the set of row address signals, each signal of said second set being associated to a respective non-volatile memory register of said at least one plurality to cause, when activated, the data carried by the column address signals and by the first set of signals to be programmed into the respective associated non-volatile memory register. Thanks to the present invention, programming of the redundancy registers can be carried out by using already existing signals, i.e. address signals normally used to address the memory elements when reading the memory device. The features of the present invention will be made more evident by the following detailed description of two embodiments, described as non-limiting examples in the annexed drawings, wherein: Figure 1 is a schematic electrical diagram of a column redundancy integrated circuitry according to a first embodiment of the present invention; Figure 2 is a schematic electrical diagram of a first part of a non-volatile memory register of the column redundancy circuitry of Figure 1; Figure 3 is a schematic electrical diagram of a second part of said non-volatile memory register; Figure 4 is a schematic electrical diagram of a programmable non-volatile memory cell of said non-volatile register; Figure 5 is a schematic electrical diagram of a column redundancy integrated circuitry according to a second embodiment of the present invention; Figure 6 is a schematic electrical diagram of a part of the column redundancy circuitry of Figure 5. In the following, reference will be made to a word-organized memory device, having as already told a data bus of sixteen bits, with memory elements located at the intersection of rows (word lines) and columns (bit lines) of a bidimensional array or memory matrix; the memory matrix is ideally divided into portions constituted by groups of bit lines, each portion representing the memory space associated to one bit in the data bus. Such architecture is well known to anyone skilled in the art, and is for example described in the European Patent No. EP-A-0 661 636. In Figure 1 a column redundancy circuitry according to a first embodiment of the invention is shown; it comprises a plurality (four, in the shown example) of programmable non-volatile memory registers or redundancy registers RR1-RR4, each one suitable to store an address of a defective bit line (not shown) which must be replaced by a redundancy bit line (not shown). As described in the already cited European Patent No. EP-A-0 661 636, each redundancy register RR1-RR4 is substantially made up of a first part, represented in Figure 1 by a block 1, wherein the address of a defective bit line can be programmed, and of a second part, represented in Figure 1 by a block 2, suitable to store in a coded form an information suitable to determine in which portion of the memory matrix (i.e. in which group of bit lines) the defective bit line whose address is stored in block 1 has been found. As shown in Figure 2, the block 1 comprises a number of programmable non-volatile memory cells MC1-MC6 equal to the number of column address signals C1-C6 in a column address bus CABUS supplying all the redundancy registers RR1-RR4. The column address bus CABUS is generated by a column address input buffer circuitry CABUF and also supplies in a per-se known way a column decoding circuitry CADEC for the selection of bit lines of the memory matrix. Each memory cell MC1-MC6 is supplied with a respective column address signal C1-C6, for the reasons which will be explained later; each memory cell MC1-MC6 has an output signal MCS1-MCS6, representing the memory cell status, which is supplied, together with the respective column address signal C1-C6, to a respective comparator 3 whose output signal CMP1-CMP6 is activated only when the memory cell status coincides with the current state of the respective column address signal; since the comparator 3 deals with digital signals, it can be simply represented by an AND gate. All the signals CMP1-CMP6 supply a redundancy bit line selection circuit 4 which, when all the signals CMP1-CMP6 are activated (i.e. when the current state of the column address signals C1-C6 coincides with the logic state stored in the memory cells MC1-MC6, which means that a defective column address is supplied to the memory device) activates a respective redundancy bit line selection signal RS1-RS4. As described in the European Patent No. EP-A-0 657 814, it is necessary to prevent ambiguous bit line selection to occurr: since in fact even non-programmed redundancy registers, associated to unused redundancy bit lines, store a particular logic state which belongs to the set of all the possible states for the column address signals C1-C6, when a column address is supplied to the memory device which coincides with said particular logic state the redundancy bit lines associated to all the non-programmed redundancy registers would be simultaneously selected. This is clearly unacceptable, and the selection of the redundancy bit lines must be inhibited whenever a column address is supplied to the memory device which coincides with said particular logic state (which is well known, since it corresponds to the non-programmed or virgin condition of the memory cells MC1-MC6) . To this purpose, a combinatorial circuit 5 (Fig. 1) is supplied with the column address bus CABUS to recognize if the current state of the column address signals C1-C6 coincides with said particular logic state, and if this occurs, the circuit 5 activates an inhibition signal DIS which is supplied to the redundancy bit line selection circuits 4 in all the redundancy registers RR1-RR4 (Fig. 2). This prevents the signals RS1-RS4 to be activated even if one or more redundancy registers RR1-RR4 exists which has not been programmed, and which therefore stores in the memory cells MC1-MC6 said particular logic state. The combinatorial circuit 5 can be an element of the column address decoding circuitry CADEC. As regards block 2 in each redundancy register RR1-RR4, it comprises a number of memory cells MC7-MC10 sufficient to store in coded form an identifying code for identifying the memory matrix portion wherein the defective bit line whose address is stored in the memory cells MC1-MC6 of the same redundancy register RR1-RR4 has been found; in the example shown, referring to a word-organized memory devices with sixteen bits in the data bus, each bit associated to a respective memory matrix portion, a four-bit code is sufficient to identify sixteen different memory matrix portions. The four memory cell status output signals MCS7-MCS10 are grouped together in a local identifying code bus ICBUS1-ICBUS4. The four bus ICBUS1-ICBUS4 are connected to an identifying code bus ICBUS through a respective multiple switch MSW1-MSW4 (a switch with four input channels and four output channels) controlled by the respective redundancy bit line selection signal RS1-RS4. Said signals RS1-RS4 are grouped together in a redundancy selection signal bus RSSBUS. As described in the European Patent No. EP-A-0 655 743, and as shown in Figure 4, each programmable non-volatile memory cell MC1-MC10 comprises a programmable non-volatile memory element, for example a floating-gate MOSFET M1 with source connected to a ground voltage GND and control gate connected to a supply voltage VG which can be switched from a reading voltage value (typically of 5 V) to a programming high-voltage value (of about 12 V); the drain of M1 is connected to a reading load circuit LC whose output is represented by the signal MCS1-MCS10; the drain of M1 is also connected to a programming load circuit substantially represented by a MOSFET M2 whose drain is connected to a programming data line PDL. In each redundancy register RR1-RR4, the programming data lines PDL of the memory cells MC1-MC6 of the block 1 are each connected to a respective column address signal C1-C6, while the programming data lines PDL of the memory cells MC7-MC10 of the block 2 are each connected to a respective row address signal R1-R4 taken from a row address bus RABUS' which is constituted by a subset of a set of row address signals grouped together to form a row address bus RABUS. The row address bus RABUS is generated by a row address input buffer circuitry RABUF and also supplies in a per-se known way a row decoding circuitry RADEC for the selection of word lines of the memory matrix. In each one of the redundancy registers RR1-RR4, the gate of the MOSFET M2 in all the memory cells MC1-MC10 is connected to an output signal PGEN1-PGEN4 of a respective ground/high-voltage switch HVSW (Fig. 1). Said switch HVSW is controlled by an output signal of a respective two-input AND gate 6, a first input of which is supplied with a redundancy register program enable signal RRPGEN activated by a control circuitry (not shown) generally provided in the memory device, and a second input of the AND gate 6 is supplied with a respective row address signal R5-R8 also taken from the row address bus RABUS. Obviously, the number of signals in the row address bus RABUS must be at least equal to the number of row address signals R1-R8. All the AND gates 6 globally represent a programming selection circuitry. When during the memory device testing a defective bit line is found in a given memory matrix portion (a situation which can be easily detected since the logic state of the respective bit in the data bus of the memory device does not correspond to the expected one), the defective bit line must be replaced by a redundancy bit line. To this purpose, the address of the defective bit line, as well as the identifying code of the memory matrix portion to which it belongs, must be programmed into one of the redundancy registers RR1-RR4 which is still available (the testing machine keeps memory of the already used redundancy bit lines), for example RR1. The memory device is supplied with a column address corresponding to that of the defective bit line, so that the column address bus CABUS carries the address to be programmed into the memory cells MC1-MC6 of the redundancy register RR1. The memory device is further supplied with a row address such that the row address signals R1-R4 carry in a coded form the identifying code of the memory matrix portion containing the defective bit line, while R5 is a logic "1" and R6-R8 are logic "0", to select the redundancy register RR1 for programming. When the control circuitry activates the signal RRPGEN, the switch HVSW in RR1 drives its output PGEN1 to the programming high voltage value: this causes the MOSFETs M2 in each memory cell MC1-MC10 of RR1 to be on, so that the voltage value present on the respective programming data line PDL is transferred to the drain of the floating-gate transistor M1; the gate voltage VG of all the floating-gate transistors M1 in all the memory cells MC1-MC10 of all the redundancy registers RR1-RR4 is also switched to the programming high voltage by the control circuitry, so that the floating gate transistors M1 can be programmed according to the voltage on their drain. Let's suppose that the defective column belongs to a matrix portion identified by the code "1111", and has an address C1=..=C5="1", C6="0": the floating-gate transistors M1 in the memory cells MC1-MC5, MC7-MC10 of RR1 will have a drain voltage corresponding to the high logic level, usually 5 V, and a gate voltage of about 12 V, and will therefore undergo programming, while in the memory cell MC6 of RR1 the drain of M1 will be grounded, and M1 will not undergo programming. In the remaining redundancy registers RR2-RR4 the signal PGEN2-PGEN4 is kept to ground, and the MOSFETs M2 in all their memory cells MC1-MC10 will be off, so that no programming takes place. When the memory device is operated in reading condition, when the column address supplied to the memory device is such that C1=..=C5="1", C6="0", in RR1 it happens that MCS1=C1,..,MCS6=C6, and all the signals CMP1-CMP6 are activated; since the current column address does not causes the signal DIS to be activated, the redundancy selection circuitry 4 in RR1 activates the redundancy selection signal RS1; this causes the multiple switch MSW1 to close, so that the signals MCS7-MCS10 (carrying the identifying code "1111" of the matrix portion containing the defective bit line) of the bus ICBUS1 are transferred to the bus ICBUS that will be decoded to define, for the memory matrix portion identified by the current identifying code, a bit line selection path different from that normally addressing non-defective bit lines; this means that the redundancy selection signal RS1 allows the selection of the redundancy bit line, while the signals in the ICBUS are decoded to inhibit the selection of the defective bit line. It must be emphasized that even if the column address signal configuration C1=..=C5="1", C6="0" determines the selection of one bit line in each memory matrix portion, only the defective bit line is deselected and replaced by a redundancy bit line; this is made possible by the fact that in the redundancy register RR1 not only the defective bit line address is stored, but also the identifying code of the matrix portion to which the defective bit line belongs. A second embodiment of the present invention, shown in Figures 5 and 6, is suitable for a memory device in which the memory matrix is divided in sectors which are individually addressable, each sector being further ideally divided in sector portions constituted by groups of bit lines and constituting the sector memory space associated to single bits in the data bus of the memory device. Such architecture is used for example in Flash EEPROM devices. Each sector is provided with respective redundancy bit lines, and to increase the reparability rate defective bit lines in a given sector can be redunded without causing non-defective bit lines in other sectors but having identical column address to be simultaneously redunded. A column redundancy circuitry for such a memory device comprises therefore a number of sector column redundancy circuitries SCRC1-SCRC4 equal to the number of different sectors (four, in the shown example). As shown in Figure 6, each sector column redundancy circuitry SCRC1-SCRC4 comprises a plurality of redundancy registers RR1-RR4, for example four, identical to those previously described. Differently from the previous embodiment, the AND gates 6 have three inputs, two of which are again supplied with the redundancy register program enable signal RRPGEN and with one of the four row address signals R5-R8, while a third input is supplied with a sector selection signal S1-S4 taken from a sector selection signal bus SBUS (all the AND gates 6 in each sector column redundancy circuitry SCRC1-SCRC4 are supplied by the same sector selection signal S1-S4). Further, the redundancy selection signals RS1-RS4 at the output of the redundancy registers RR1-RR4 are not directly grouped together to form the bus RSBUS, but are instead each one supplied to a first input of a respective AND gate 7 whose second input is supplied with the sector selection signal S1-S4 of the sector to which the column redundancy circuitry SCRC1-SCRC4 is associated; the output of each AND gate 7 is then connected to a respective signal RS1'-RS4' of the RSBUS through a respective switch SW1-SW4 controlled by the sector selection signal S1-S4. The multiple switches MSW1-MSW4 are not controlled by the respective signal RS1-RS4 directly, but by the output signal of the AND gate 7, and their closing is thus subjected not only to the activation of the respective signal RS1-RS4, but also to the activation of the sector selection signal S1-S4. When during the memory device testing a defective bit line is found in a given sector, let's say in the first sector, said defective bit line can be replaced by a redundancy bit line associated to a redundancy register belonging to the sector column redundancy circuitry SCRC1. Supposing that such redundancy register is RR1, programming of the defective bit line address and sector portion identifying code in the redundancy register RR1 requires the activation of the sector selection signal S1 and of the row address signal R5, so that when the control circuitry activates the signal RRPGEN the signal PGEN1 in SCRC1 is driven to the programming voltage value. Programming of the redundancy registers RR2-RR4 in SCRC1 is inhibited by keeping the row address signals R6-R8 low as in the previous embodiment, and programming of the redundancy registers RR1-RR4 in the sector column redundancy circuitries SCRC2-SCRC4 is inhibited by keeping the sector selection signals S2-S4 low. When the memory device is operated in reading condition, and the first sector is addressed, when the column address supplied to the memory device coincides with the address stored in RR1 of SCRC1 the signal RS1 is activated. Since only one sector is addressed at a time, of the four sector selection signals S1-S4 only S1 is activated: the switches SW1-SW4 in SCRC1 are therefore closed, while the switches SW1-SW4 in SCRC2-SCRC4 are open, so that the signals RS1'-RS4' of the bus RSBUS are respectively connected to the output signals of the four AND gates 7 in SCRC1. The output of the AND gate 7 associated to RR1 in SCRC1 is activated; this causes the signals RS1' to be activated, so that the respective redundancy bit line can be selected. Further, the activation of the output signal of the AND gate 7 associated to RR1 in SCRC1 causes the multiple switch MSW1 in SCRC1 to close so that the identifying code stored in RR1 and carried by the local bus ICBUS1 of SCRC1 is transferred to the identifying code bus ICBUS. The remaining multiple switches MSW2-MSW4 in SCRC1, as well as all the multiple switches MSW1-MSW4 in SCRC2-SCRC4, are instead open. As in the previous embodiment, the signals of the bus ICBUS are used to inhibit the selection of the addressed defective bit line.

Claims: Method for programming redundancy registers in a column redundancy integrated circuitry for a semiconductor memory device with memory elements located at the intersection of rows and columns of at least one bidimensional array of memory elements, the columns being grouped together to form portions of the bidimensional array, the column redundancy circuitry comprising at least one respective plurality of non-volatile memory registers (RR1-RR4) each one associated to a respective redundancy column of redundancy memory elements and each one programmable to store an address of a defective column and an identifying code (MCS7-MCS10) for identifying the portion of the bidimensional array to which the defective column belongs, characterized in that it provides for supplying each non-volatile memory register (RR1-RR4) with column address signals (C1-C6) and with a first set of signals (R1-R4), constituting a first subset of a set of row address signals (RABUS), which when one of the non-volatile memory registers (RR1-RR4) is to be programmed carry the address of a defective column and said identifying code (MCS7-MCS10) respectively, and for activating one signal of a second set of signals (R5-R8), supplied to programming selection means (6) and constituting a second subset of the set of row address signals (RABUS), for selecting one respective non-volatile memory register (RR1-RR4) of said plurality to cause the data carried by the column address signals (C1-C6) and by the first set of signals (R1-R4) to be programmed into said one respective non-volatile memory register (RR1-RR4). Column redundancy integrated circuitry for a semiconductor memory device with memory elements located at the intersection of rows and columns of at least one bidimensional array of memory elements, the columns being grouped together to form portions of the bidimensional array, comprising at least one respective plurality of non-volatile memory registers (RR1-RR4) each one associated to a respective redundancy column of redundancy memory elements and each one programmable to store an address of a defective column and an identifying code (MCS7-MCS10) for identifying the portion of the bidimensional array to which the defective column belongs, characterized in that it comprises first means (CABUS) and second means (RABUS') for supplying each non-volatile memory register (RR1-RR4) respectively with column address signals (C1-C6) and with a first set of signals (R1-R4), constituting a first subset of a set of row address signals (RABUS), which when one of the non-volatile memory registers (RR1-RR4) is to be programmed carry the address of a defective column and said identifying code (MCS7-MCS10) respectively, and in that it further comprises programming selection means (6) supplied with a second set of signals (R5-R8), constituting a second subset of the set of row address signals (RABUS), each signal of said second set (R5-R8) being associated to a respective non-volatile memory register (RR1-RR4) of said at least one plurality to cause, when activated, the data carried by the column address signals (C1-C6) and by the first set of signals (R1-R4) to be programmed into the respective associated non-volatile memory register (RR1-RR4). Column redundancy integrated circuitry according to claim 2, further characterized in that each non-volatile memory register (RR1-RR4) comprises a first set of non-volatile memory cells (MC1-MC6) each supplied with a respective column address signal (C1-C6), and a second set of non-volatile memory cells (MC7-MC10) each supplied with a respective signal of the first set of signals (R1-R4), each memory cell (MC1-MC10) comprising at least one programmable non-volatile memory element (M1), a load circuit (LC) for reading the information stored in said non-volatile memory element (M1), and a programming load circuit (M2) for electrically connecting said non-volatile memory element (M1) to the respective column address signal (C1-C6) or to the respective signal of the first set of signals (R1-R4) when the non-volatile memory register (RR1-RR4) is to be programmed. Column redundancy integrated circuitry according to claim 3, further characterized in that said programming load circuit comprises a transistor (M2) connected between one of said column address signals (C1-C6) or one signal of the first set of signals (R1-R4) and a supply electrode of the respective non-volatile memory element (M1), and controlled by a program enable signal (PGEN1-PGEN4) which during programming is activated by said programming selection means (6) when the respective signal of the second set of signals (R5-R8) is activated. Column redundancy integrated circuitry according to claim 2, further characterized in that said memory device comprising a plurality of bidimensional arrays of memory elements constituting individually addressable sectors of a matrix of memory elements, each sector being provided with a respective plurality of redundancy columns associated to a respective plurality of non-volatile memory registers (RR1-RR4), characterized in that said programming selection means (6) are further supplied with sector selection signals (S1-S4) for the selection of the plurality of non-volatile memory registers (RR1-RR4) to which a non-volatile memory register to be programmed belongs.

Inventors: OLIVO MARCO, PASCUCCI LUIGI, OLIVO, MARCO, PASCUCCI, LUIGI
Applicants: ST MICROELECTRONICS SRL, STMICROELECTRONICS S.R.L.
Application year: 1994
Main classification: G06F11
IPC codes: G11C11, G11C29