Semiconductor device comprising a plurality of semiconductor elements

Abstract: A plurality of semiconductor elements (1, 2) are accommodated in one container. The top electrode surfaces (3, 4) of the elements (1, 2) are brought into contact with a top terminal board (16) under pressure, so that the elements and the terminal boards are connected together. Heat is dissipated from both surfaces of the container. If the height of the top electrode surface (3, 4) differs among different kinds of semiconductor elements, or if the height is not uniform in the elements of the same type, then uniform contact under pressure will not be achieved. The present invention solves this problem in that intermediate terminal boards (81, 82) are inserted between a top terminal board (16) of a container and the top electrode surfaces of semiconductor elements (1, 2). The intermediate terminal boards (81, 82) have a protruding portion or portions (83, 84) on the sides facing the semiconductor elements. The heights of the protruding portions (83, 84) have been previously polished according to the heights of the top electrode surfaces measured from the bottom surface of the bottom terminal board (12). When pressure is applied to the top terminal board (16), the intermediate terminal board (81, 82) is brought into uniform contact with the top electrode surfaces of the semiconductor elements (1, 2).

Description: The present invention relates to a semiconductor device comprising a plurality of semiconductor elements such as insulated-gate bipolar transistors (IGBTs) received in one container and also to a method of fabricating the semiconductor device. Receiving plural semiconductor elements of one or more kinds in one container and modularising them have found wide acceptance because the capacity is increased and because the labour needed to make wire connections can be reduced. For example, what is presently known as an IGBT module comprises one container in which plural IGBT chips and a flywheel diode chip are received. Numerous aluminium bonding wires are brought out from main electrodes (such as emitter and cathode electrodes on the top surfaces of the element chips) and from control electrodes (such as gate electrodes) to make connections. Accordingly, in this IGBT module, cooling is done only from the collector side on the bottom of each chip. As described above, connections of the emitters of the IGBT module depends on the aluminium wire bonding having a diameter of about 300 µm. Therefore, heat dissipation from the collector side is possible but heat dissipation from the emitter side can be hardly expected. Consequently, the current capacity is limited. In recent years, more compact IGBT modules having greater capacity than conventional modules have been required in industrial and vehicular applications. As the capacity of a module is increased, more IGBT chips must be integrated in the module. Hence, it is inevitable that the module itself is increased in size. Also, the number of aluminium wires bonded inside the module is inevitably increased and may reach several tens or several hundreds. Therefore, the reliability in the presence of vibrations presents great problems. In addition, the aluminium wires, and the terminals to which the aluminium wires are connected, are lengthened. As a result, their inductances increase. When a large current is turned off, the resulting voltage surge increases. This is disadvantageous in the design of an apparatus. On the other hand, in one conceivable method, wire bonding is not used for emitter connections, but instead top emitter electrodes are in contact with an emitter terminal board in a plane as used in a flat type semiconductor device such as a GTO thyristor. However, where plural IGBT chips and a flywheel diode are connected in parallel and brought into contact with each other under pressure by a common terminal board, if the distance between the bottom surface of the common terminal board and each electrode on the top surface of each chip is not uniform before the application of the pressure, then it is not possible to apply uniform pressure to the whole module. In consequence, uniform energisation cannot be made. It is an object of the present invention to provide a semiconductor device which comprises a plurality of semiconductor elements received in a container and in which terminal boards can be brought into contact with electrodes lying on one main surface of each semiconductor element by applying uniform pressure. Also, it is an object of the invention to provide a method of fabricating this semiconductor device. GB-A-2 189 343 describes a semiconductor element module having a housing which may contain a plurality of semiconductor elements connected to external terminals. The distance between the terminals is adjustable. The terminals are preferably connected to the semiconductor elements by a compression assembly in which the pressure is applied using a spring such as a plate spring. According to claim 1 of the present invention there is provided a semiconductor device. There is also provided a method of fabricating a semiconductor device according to claim 3. Preferably the contour of the intermediate terminal boards is made to conform to the contour of the semiconductor elements and the intermediate terminal boards are placed in position relative to the semiconductor elements using a cylindrical jig. The intermediate terminal boards whose heights can be adjusted according to the heights of the electrode surfaces of the semiconductor elements are inserted between the top terminal board and the electrode surfaces of the semiconductor elements. Thus, variations in the thickness of the semiconductor elements or variations in the thickness of brazes or solders are absorbed so that the top surfaces of the intermediate terminal boards are made equal to each other. Pressure applied from the outside to the top terminal board is uniformly applied to the interfaces between the electrode surfaces of the semiconductor elements and the surfaces of the intermediate terminals. Means for dissipating the heat from the semiconductor elements is not limited to the bottom terminal board as in the prior art techniques. Rather, heat is also dissipated from the top terminal board and so uniform heat dissipation takes place. Consequently, the cooling efficiency increases dramatically. The heights of the intermediate terminal boards can be easily adjusted by polishing the protrusions on the intermediate terminal boards. The intermediate terminal boards and the semiconductor elements can be easily placed in position relative to each other by the use of the cylindrical jig by making the contour of the intermediate terminal boards conform to the contour of the semiconductor elements. Embodiments of the invention will now be described in detail with reference to the drawings, in which: Figure 1, (a)-(i), are cross-sectional views illustrating successive steps of a method of fabricating an IGBT module according to the invention; Figure 2 is a plan view of the IGBT module fabricated by the steps of Figure 1, excluding the upper structure; Figure 3 is a side elevation of an intermediate terminal board for IGBT, the board being used in the manufacturing method illustrated in Figure 1; and Figure 4 is a side elevation of an intermediate terminal board for a diode, the board being used in the manufacturing method illustrated in Figure 1. Figure 2 is a plan view of the lower structure of an IGBT module forming one example of the present invention. A container has a ceramic side wall 11 inside of which 5 IGBT chips 1 and one flywheel diode chip 2 are accommodated. Two emitter electrodes 3 are formed on the top surface of each IGBT chip 1. A cathode electrode 4 is formed on the top surface of the diode chip 2. A gate interconnect 5 is laid outside the chips and connected with gate pads of the IGBT chips by aluminium bonding wires 6. The gate interconnect is brought out by a gate lead 7 extending through the side wall of the container. Figure 1, (a)-(i), show steps for assembling the upper structure of this IGBT module. These figures are cross sections taken in the plane A-A of the plan view of Figure 2. First, a conductive bottom terminal board 12 is brazed to the ceramic container side wall 11, a spacer 13 being firmly secured to the centre of the terminal board 12 (Figure 1(a)). The bottom terminal board 12 is provided with a groove 14 in which a positioning jig is inserted. Then, the IGBT chip 1 is brazed or soldered to the region surrounded by the groove 14 in the bottom terminal board 12, for example by a high-temperature solder, such that the collector electrodes of the IGBT chips 1 and the anode electrode of the diode chip 2 face downward (Figure 1(b)). At this time, the difference in thickness between each IGBT chip 1 and the diode chip 2 is about 200 µm. Also, variations in thickness of the IGBT chips 1 are about ± 15 µm. Furthermore, the thickness of the high-temperature solder layer varies by about ± 30 µm. Accordingly, the height h (Figure 1(c)) of the top surface of each chip from the bottom surface of the terminal board 12 is measured at a resolution of about 0.5 µm by making use of an accurate measuring instrument such as a laser rangefinder. Subsequently, a positioning cylindrical jig 15 is prepared (Figure 1(d)). This is inserted into the groove 14 in the bottom terminal board 12, followed by bonding of the gate wires 6 shown in the IGBT plan view of Figure 2 (Figure 1(e)). Then, intermediate terminal boards 81 and 82 are inserted into the jig 15 (Figure 1(f)). The intermediate terminal board 81 for the IGBT chips 1 is provided with belt-like protruding portions 83 whose shape corresponds to the two-dimensional shape of the emitter electrodes 3 as shown in Figure 3. The intermediate terminal board 82 for the diode chip 2 is provided with a protruding portion 84 in the form of a square, the shape of the protruding portion 84 corresponding to the two-dimensional shape of the cathode electrode 4 as shown in Figure 4. Based on previously measured data about the height h shown in Figure 1(c), processing is performed by a personal computer or the like. The top surface or surfaces of the protruding portions 83 or protruding portions 84 are accurately polished at an accuracy of the order of 1 µm with a grinding stone so that the heights h from the bottom surface of the bottom terminal board 12 to the top surface of the intermediate terminal board 81 or 82 become uniform. After inserting the intermediate terminal boards 81 and 82, the heights H are checked. To secure safety, a buffer plate 9 (Figure 1(g)) having a thickness of about 100 µm and consisting of oxygen-free copper or the like is placed to absorb variations in the height H still remaining on the intermediate terminal boards 81 and 82. After hermetically coupling a common top terminal board 16 to the side wall of the container, nitrogen, helium, or the like is injected through a vent hole 17, and the container is sealed off (Figure 1, (h), (i)). According to the present invention, variations in height of the top electrode surfaces of plural semiconductor elements, due to different thicknesses and other variations in the semiconductor elements, are cancelled out by the heights of intermediate terminal boards inserted between the electrode surfaces and the top terminal board. Pressure applied from the outside via the top terminal board brings the semiconductor elements into uniform contact with the top terminal board under even pressure, so that they are interconnected. In this way, both top and bottom surfaces of each of the plural semiconductor elements contained in one container can be cooled. In consequence, the current capacity increases, and the inductance decreases.

Claims: A semiconductor device characterised in that it comprises: a container having an insulating side wall (11) and top and bottom conductive terminal boards (16,12) having their outer peripheral portions coupled to top and bottom ends of the side wall (11); a plurality of semiconductor elements (1,2) contained in the container having electrodes (3,4) on their top surfaces and electrodes on their bottom surfaces; the electrodes on the bottom surfaces of the semiconductor elements (1,2) being rigidly fixed to the bottom terminal board (12); and the top terminal board (16) disposed opposite to the electrodes (3,4) on the top surfaces with intermediate terminal boards (81,82) interposed therebetween, said intermediate terminal boards having individually height adjusted contact elements (83,84), each making contact to respective electrodes (3,4) on the top surfaces of the semiconductor elements. A semiconductor device according to claim 1, characterised in that each of the intermediate terminal boards (81,82) comprises a flat portion of a given thickness and protruding portions (83,84) forming said contact elements, said protruding portions having a surface capable of making contact with the electrode surfaces (3,4) on the top surfaces of the semiconductor elements (1,2). A method of fabricating a semiconductor device characterised in that it comprises the steps of: coupling an insulating side wall (11) of a container to an outer peripheral portion of a conductive bottom terminal board (12); rigidly securing electrodes formed on the respective bottom surfaces of a plurality of semiconductor elements (1,2) to the inner surface of the conductive bottom terminal board (12); measuring the heights of the top surface of electrodes (3,4) formed on the top surfaces (3,4) of the secured semiconductor elements (1,2) from the outer surface of the bottom terminal board (12); providing one intermediate terminal board (81,82) for each semiconductor element, said intermediate terminal boards having on their bottom surface protrudering portions (83,84) forming contact elements; polishing the heights of the protruding portions (83,84) of the intermediate terminal boards (81,82) so that when the intermediate terminal boards are placed on the respective semiconductor elements the heights from the outer surface of the bottom terminal board to the top surface of said intermediate terminal boards is uniform; placing the intermediate terminal boards (81,82) having the polished protruding portions (83,84) on the respective electrodes formed on the top surfaces of the semiconductor elements (1,2); and coupling the insulating side wall (11) to the outer peripheral portion of a conductive top terminal board (16). A method of fabricating a semiconductor device according to claim 3, characterised in that the intermediate terminal boards (81,82) are made to correspond in contour to the semiconductor elements (1,2), and the intermediate terminal boards (81,82) are placed in a position relative to the semiconductor elements (1,2) and placed on the semiconductor elements (1,2) using a jig (15). A method of fabricating a semiconductor device according to claim 4, characterised in that the jig (15) is located relative to the device by engaging the bottom terminal board (12). A method of fabricating a semiconductor device according to claim 5, characterised in that the bottom terminal board (12) is formed with a recess 14 into which a cooperating element of the jig (15) engages.

Inventors: TAKAHASHI YOSHIKAZU, TAKAHASHI, YOSHIKAZU
Applicants: FUJI ELECTRIC CO LTD, FUJI ELECTRIC CO. LTD.
Application year: 1994
Main classification: H01L25
IPC codes: H01L25, H01L23