A varistor and its manufacturing method

Abstract: The present invention is to simplify the presently employed complicated processes necessary to manufacture a zinc-oxide varistor, comprised of a process to sinter zinc-oxide element at high temperature and a separate process to sinter its electrodes coated on said element, yet to obtain an improved varistor characteristics. Said varistor element contains zinc-oxide as a main constituent and at least bismuth and antimony as accessory constituents. In this case, the content of bismuth in terms of Bi₂O₃ is in a range from 0.1 to 4.0 mol% and the content of antimony in terms of Sb₂O₃ constitutes a mol-ratio of Sb₂O₃/Bi₂O3 ≦ 1.0. These materials are mixed thoroughly and are pressed into a compact. After coating both sides of said compact with Ag or Ag-Pd paste, said compact and its electrodes are sintered simultaneously at a temperature of 800 to 960°C

Description: FIELD OF THE INVENTION This invention relates to a varistor developed to protect electronic devices such as television receivers when abnormally high surge voltage is applied thereon, and its manufacturing method. BACKGROUND OF THE INVENTION Since modern electronic devices such as television receivers have to be provided with an increased number of functions, circuits of more complicated and higher integration have to be incorporated therein. In addition to this, these complicated circuits have to be protected against possible surge voltage by means of an electronic device such as varistor made of zinc-oxide. Therefore, the demand for the varistor of this type is rapidly increasing also. Conventional zinc-oxide varistor can be manufactured by mixing zinc oxide with nickel, cobalt, and antimony compounds, and these materials are molded into a compact which is then sintered at a temperature of 1150 to 1350°C. This sintered compact is then coated with electrode paste made of platinum or palladium and baked to form two electrodes thereon. However, when antimony added to the materials as an accessory constituent, the compact can not be sintered thoroughly at the above-mentioned temperature, and this had been a primary problem of this type of varistor. From US-A-5,075,661, there is known a varistor primary composed of ZnO and further comprises predetermined concentrations of Bi 2 O 3 in a selected ratio with Sb 2 O 3 wherein Sample 902 discloses a ratio of Sb 2 O 3 / Bi 2 O 3 of 0.3, from which a Sb 2 O 3 content of 0.9 mol% can be calculated. SUMMARY OF THE INVENTION The objective of the present invention is to solve this problem, and to offer a composition of varistor which can be sintered at a relatively low temperature of 800 to 1000°C despite antimony added as an accessory constituent. Furthermore, the invention is to offer a manufacturing method thereof also. The above object in terms of a varistor is achieved by the subject matter of claim 1. Furthermore, as additional accessory constituents, at least more than one element among lead, germanium, or tin in terms of PbO, GeO 2 , or SnO 2 can be contained in the varistor of the invention at an amount of (PbO + GeO 2 + SnO 2 ) ≤ 0.5 mol%. Moreover, as additional accessory constituents, at least more than one elements among lead, germanium, or tin in terms of PbO, GeO 2 , or SnO 2 can be contained in the varistor of the invention at an amount of (PbO + GeO 2 + SnO 2 ) ≤ 0.15 mol%. Moreover, as a still other accessory constituent, aluminum in terms of Al 2 O 3 can be contained in the varistor of the invention at an amount of 0.001 -0.01 mol%. Furthermore, the varistor of the invention can be manufactured as defined in claim 4. According to a preferred embodiment, the varistor of the invention can be manufactured as defined in claim 5. Therefore, by employing the invented varistor construction, the varlstor can be sintered at a temperature substantially lower than that of conventional varistor, and thus, the varistor compact and the electrodes can be sintered simultaneously, eliminating an extra electrode sintering process and improving the varistor productivity. Thus, because of its lower sintering temperature, the energy for heating can also be saved, and because of the same shrinkage coefficients of compact and electrodes at sintering, the adhesion between the compact and electrode can be higher and thus the higher reliability can be obtained. Furthermore, by introducing phosphor and boron as accessory constituents, various varistor characteristics including the anti-surge and the high-temperature load-life characteristics can be improved substantially. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 shows a cross-section of varistor which is an embodiment of the invention. Fig. 2 shows a relationship between the density of sintered varistor element and the mol-ratio of (Sb 2 O 3 /Bi 2 O 3 ) thereof. Fig. 3 shows a relationship between the sintering temperature and the density of sintered varistor element. Fig. 4 shows a relationship between the characteristics value of varistor (V 1mA /V 10µA ) and the mol-ratio of (Sb 2 O 3 /Bi 2 O 3 ) thereof. Fig. 5 shows a relationship between the characteristics value of varistor (V 25A /V 1mA ) and the mol-ratio of (Sb 2 O 3 /Bi 2 O 3 ) thereof. Fig. 6 shows a relationship between the characteristic value of varistor (V 25A /V 1mA ) and the mol-ratio of (Sb 2 O 3 /Bi 2 O 3 ) thereof. Fig. 7 shows a cross-section of laminated type varistor which is another embodiment of the invention, showing its construction. In the following, embodiments of the invention as well as non-inventive embodiments useful for the understanding of the present invention, will be presented. Embodiments 1, 2 and 4 are out of the claimed invention. Non-inventive Embodiment-1 At first, ceramic materials including ZnO as a main constituent and, as accessary constituents, Bi 2 O 3 at 1.0 - 4.0 mol%, Co 2 O 3 at 0.5 mol%, MnO 2 at 0.15 mol%, Sb 2 O 3 at 0 - 4.5 mol%, and Al 2 O 3 at 0.005 mol% are mixed thoroughly after an organic binder is added. By applying a pressure of 1 ton/cm 2 , this mixture is pressed into a disk-shaped compact having a diameter of 10 mm and a thickness of 1.2 mm. After applying an electrode paste consisting of silver powder and organic vehicle, the compact is sintered at a temperature of 750 - 960°C, and by this, varistor element 1 and electrodes 2a and 2b are formed. A relationship between the density and the mol-ratio of Sb 2 O 3 /Bi 2 O 3 of varistor element 1 sintered at 900°C is shown in Fig. 2, wherein the degree of sintering is expressed in terms of densities of varistor element 1. Line (1) in Fig. 2 shows a relationship between the density and the mol-ratio of varistor element 1 containing Bi 2 O 3 at 0.1 mol%, Line (2) shows the one containing Bi 2 O 3 at 1.0 mol%, Line (3) shows the one containing Bi 2 O 3 at 2.0 mol%, and Line (4) shows the one containing Bi 2 O 3 at 4.0 mol%, respectively. As shown in Fig. 2, the densities show a decrease first when the amount of added Sb 2 O 3 is increased. However, the density shows a rise when Sb 2 O 3 /Bi 2 O 3 ≒ 0.5. This is then followed by a gradual decrease as the amount of Sb 2 O 3 added to varistor element 1 is increased. A relationship between the sintering temperature and the density of varistor element 1 changing the mol-ratio of (Sb 2 O 3 /Bi 2 O 3 ) is shown in Fig. 3 wherein the amount of added Bi 2 O 3 is 1.0 mol%. Line (5) in Fig. 3 shows densities of varistor containing Bi 2 O 3 at a mol% of 0.1, Line (6) at a mol% of 0.25, (7) at a mol% of 0.5, (8) at a mol% of 1.0, and (9) at a mol% of 2.0, sintered at the respective temperatures. As seen from Fig. 3, the densities of varistor element 1 are constant beyond 750°C when the mol-ratio of (Sb 2 O 3 /Bi 2 O 3 ) = 0.5, and this proves that the sintering is adequately performed. However, the changes or varistor density are large when the mol-ratio of (Sb 2 O 3 /Bi 2 O 3 ) is brought up to a value of 1.0 or 2.0, showing inadequate sintering performed at 850°C. Figs. 4 and 5 then show relationships between the mol-ratio of (Sb 2 O 3 /Bi 2 O 3 ) and the characteristics of varistor element sintered at a temperature of 900°C. The voltage-ratio shown in Fig. 4 is an index of nonlinearity, showing the ratios of voltages obtained at a current ratio of 10µA/1mA, that is, (V 1mA /V 10µA ) respectively. The limiting voltage-ratio shown in Fig. 5 is an index of varistor characteristics in a high-voltage range, showing the voltage ratios between the voltage (V 25A ) obtained at a surge current of 25A, and the voltage (V 1mA ) obtained at a current of 1mA. In Fig. 4, Line (10) shows the voltage ratios obtained when Bi 2 O 3 is 0.1 mol%, Line (11) is obtained when Bi 2 O 3 is 1.0 mol%, Line (12) is obtained when Bi 2 O 3 is 2.0 mol%, and Line (13) is obtained when Bi 2 O 3 is 4.0 mol%. In Fig. 5, Line (14) is obtained when Bi 2 O 3 is 0.1 mol%, Line (15) is obtained when Bi 2 O 3 is 1.0 mol%, Line (16) is obtained when Bi 2 O 3 is 2.0 mol%, and Line (17) is obtained when Bi 2 O 3 is 4.0 mol%, respectively. As shown in Figs. 4 and 5, both of the optimum voltage ratios and the limiting voltage ratios are obtained when (Sb 2 O 3 /Bi 2 O 3 ) = 0.5. From the descriptions shown in above, when (Sb 2 O 3 /Bi 2 O 3 ) ≤ 1,0 (mol ratio), the sintering is accomplished within a temperature range of 750°C - 960°C, and the varistor density shows a maximum at a mol ratio of (Sb 2 O 3 /Bi 2 O 3 ) = 0.5 despite of added antimony. This means that the optimum sintering characteristics, together with the optimum voltage-ratio and the limiting voltage ratio characteristics are obtained at that condition. Non-inventive Embodiment-2 A second non-inventive embodiment, or Embodiment-2 is now explained below. Ceramic materials including ZnO as a main constituent, and accessory constituents Bi 2 O 3 added at an amount of 1.0 mol%, Co 2 O 3 at 0.5 mol%, MnO 2 at 0.15 mol%, Sb 2 O 3 at 0 - 1.0 mol%, Al 2 O 3 at 0.005 mol%, and P 2 O 5 at (0 - 1.0 mol%), are thoroughly mixed, varistors of Embodiment-2 are prepared by applying a method same as the one shown in Embodiment-1 wherein the sintering temperature is 900°C. Table 1 shows a relationship between the characteristics of varistor 1 in which Sb 2 O 3 is added at 0.5 mol% and the amount of added P 2 O 5 . P 2 O 5 (mol%) Density (g/cm 3 ) V 1mA /V 10µM Max surge (Amp) current (Amp) 0 5.25 1.10 1000 0.05 5.28 1.09 1500 0.1 5.30 1.08 2000 0.3 5.30 1.15 2000 0.5 5.39 1.23 2000 1.0 5.39 1.50 1500 wherein the surge current waveform takes a form of 8 x 20 µs. As shown in Table 1, the density of varistor element 1 is substantially increased and the maximum surge current is improved also by adding P 2 O 5 , while the voltage-ratio characteristics is sacrificed by the addition of P 2 O 5 beyond a certain point. Therefore, the maximum surge current characteristics can be improved without affecting the other varistor characteristics by adding P 2 O 5 at an amount in a range of P 2 O 5 ≤ 0.3 (mol%). The relationships between the mol-ratios of (Sb 2 O 3 /Bi 2 O 3 ) and the limiting voltage ratios (V 25A /V 1mA ) when the added amount of P 2 O 5 is changed in an order of 0, 0.05, 0.1, 0.3, and 1.0 (mol%) are shown in Fig. 6 wherein Line (18) shows a limiting voltage ratio characteristics obtained when P 2 O 5 is added at an amount of 0 mol%, Line (19) shows a case of P 2 O 5 = 0.05 mol%, Line (20) is a case of P 2 O 5 = 0.1 mol%, Line (21) shows a case of P 2 O 5 = 0.3 mol%, and Line (22) shows a case of P 2 O 5 = 1.0 mol%, respectively. As shown in Fig. 6, the optimum of limiting voltage-ratio is shifted toward the smaller value of Sb 2 O 3 /Bi 2 O 3 as the amount of added P 2 O 5 is increased. From these facts and that antimony and phosphor belong to a same family, it is understandable that the effects of phosphor and antimony are same to an extent. Thus, the sintering characterisitcs of varistor element 1 and the maximum surge current characteristics can be are substantially improved by replacing antimony with phosphor. Inventive Embodiment-3 A first embodiment of the present invention, or Embodiment-3 is explained below. Ceramic materials including ZnO as a main constituent and accessory constituents Bi 2 O 3 added at an amount of 1.0 mol%, Co 2 O 3 at 0.5 mol%, MnO 2 at 0.15 mol%, Sb 2 O 3 at 0.5 mol%, Al 2 O 3 at 0.005 mol%, and B 2 O 3 at (0 - 1.0 mol%), are thoroughly mixed, and varistors shown in Table 2 are obtained by applying a method shown in Embodiment-1 wherein the sintering temperature is 900°C. Table 2 shows a relationship between the varistor characteristics and the amount of added B 2 O 3 . B 2 O 3 (mol%) Density (g/cm 3 ) *Change in V 1mA (%) (in P-dir.) V 25A /V 1mA 0 5.25 20 1.33 0.01 5.26 10 1.33 0.05 5.27 3 1.34 0.1 5.30 2 1.35 0.5 5.35 5 1.36 1.0 5.37 5 1.38 wherein * is a high-temperature load-life characteristics expressed in terms of variation of V 1mA . The change of V 1mA , or the high-temperature load-life characteristics shown in Table 2 are changes of varistor voltage (V 1mA ) in % evaluated after a voltage causing a varistor current of 1mA is kept applied for 100 hours at 125°C. As shown in Table 2, a substantial improvement of high-temperature load-life charactersitcs is obtained by increasing the amount of added B 2 O 3 due possibly to an improvement of sintering characteristics brought by this. Since this is similar to a case where conventional glass-frit is added, this means that the needs of glass frit is very little. However, the limiting voltage ratio is decreased as the amount of added B 2 O 3 is increased. Non-inventive Embodiment-4 A third non-inventive embodiment is explained below. Ceramic materials including ZnO as a main constituent and accessory constituents of Bi 2 O 3 added at an amount of 1.0 mol%, Co 2 O 3 at 0.5 mol%, MnO 2 at 0.15 mol%, Sb 2 O 3 at 0.5 mol%, PbO at 0 - 0.1 mol%, GeO 2 at 0 - 0.1 mol%, and SnO 2 at 0 - 0.1 mol%, and Al 2 O 3 at (0.005 mol%) are thoroughly mixed, and the mixture is sintered at a temperature of 900°C by applying a method shown in Embodiment-1. By this, varistors having maximum surge current characteristics shown in Table 3 are prepared. Pb0...0 mol% Pb0...0.05 mol% Pb0...0.1 mol% GeO 2 mol% 0 0.05 0.1 GeO 2 0 mol% 0.05 0.1 GeO 2 0 mol% 0.05 0.1 SnO 2 mol% SnO 2 mol% SnO 2 mol% P-3 P 0 P+2 P-2 P 0 P 0 P 0 P 0 P-2 0 N-15 N-8 N-3 0 N-9 N-2 N-3 0 N-2 N-3 N-6 (%) (%) (%) (%) (%) (%) (%) (%) (%) P 0 P+2 P+1 P 0 P 0 P-1 P 0 P-1 P-3 0.05 N-7 N-2 N-3 0.05 N-3 N-2 N-6 0.05 N-3 N-5 N-10 (%) (%) (%) (%) (%) (%) (%) (%) (%) P+1 P 0 P 0 P+1 P-2 P-3 P-1 P-3 P-3 0.1 N-3 N-4 N-7 0.1 N-3 N-6 N-7 0.1 N-5 N-10 N-15 (%) (%) (%) (%) (%) (%) (%) (%) (%) A surge current of 1000 amperes is employed to obtain the data shown in Table 3. The maximum surge current is evaluated in terms of the varistor voltage change caused by the above-shown current. "P" shown in Table 3 means a rate of change in positive direction, and "N" means a change in negative direction. As shown in Table 3, the maximum surge current characteristics can be optimized when the total amount of added Pb, Ge, and Sn is less. than 0.15 mol%, and this is independent of the combinations of these. Inventive Embodiment-5 A fifth embodiment of the invention, or Embodiment-5 is explained below. Table 4 shows a varistor composition of Embodiment-5 featuring its lower sintering temperature, together with Example-1 having a composition same as Embodiment-5 but is sintered at a high temperature, and Example-2 having a conventional composition and is sintered at a low temperature. Composition (mol%) Embodiment-5 Example-1 Example-2 ZnO 97.655 97.655 98.345 Bi 2 O 3 1.0 1.0 1.0 Co 2 O 3 0.5 0.5 0.5 MnO 2 0.15 0.15 0.15 Sb 2 O 3 0.5 0.5 - Al 2 O 3 0.005 0.005 0.005 P 2 O 5 0.05 0.05 - B 2 O 3 0.05 0.05 - PbO 0.03 0.03 - GeO 2 0.03 0.03 - SnO 2 0.03 0.03 - The compositions of Embodiment-5 and Example-1 shown in Table 4 are an optimum determined after various compositions are experimented through Embodiments-1 to -4, and these varistors are prepared by using a method shown in Embodiment-1, and are sintered at a low temperature of 900°C or a high temperature of 1240°C. The characteristics of these varistors are shown in Table 5. Embodiment-5 Example-1 Example-2 V 1mA 200 180 110 V 1mA /V 10µA 1.07 1.08 1.56 V 25A /V 1mA 1.36 1.36 1.79 Max surge current (A) 2000 2000 500 Change of V 1mA (%) in N-dir. 5 5 35 As shown in Table 5, Embodiment-5 shows a characteristics nearly comparable to that of Example-1, which is far superior over that of Example-2. Inventive Embodiment-6 A sixth embodiment of the invention, is now explained below. Fig. 7 shows a cross-section of laminated type varistor, that is, Embodiment-6 of the invention. In preparing Embodiment-6, materials including ZnO as a main constituent and accessory constituents of Bi 2 O 3 added at an amount of 1.0 mol%, Co 2 O 3 at 0.5 mol%, MnO 2 at 0.15 mol%, Sb 2 O 3 at 0.5 mol%, GeO 2 at 0.05 mol%, Al 2 O 3 at 0.005 mol%, B 2 O 3 at 0.05 mol%, and P 2 O 5 at 0.05 mol% is thoroughly mixed after a plasticizer and an organic solvent are mixed thoroughly, and this mixture is formed into a green sheet having a thickness of 30 to 40 microns using a doctor blade. Plural of the green sheets are then laminated into ceramic sheet 3. Then, an electrode paste consisting of silver powder and organic vehicle is coated on a side of ceramic sheet 3 in order to form internal electrodes 4a or 4b. Then, plural of ceramic sheets with internal electrode 4a or 4b are so laminated alter-t internal electrodes 4a or 4b can be electrically connected at the either edge of said ceramic sheets by applying said electrode paste on the edges to form external electrodes 5a and 5b. After sintering this laminated varistor at 900°C, this is dipped in a nickel-sulfate solution having a pH of 4 to 5 kept at 70°C for 5 to 10 minutes in order to apply an electroless plating on external electrodes 5a and 5b, and in a succeeding non-cyanide solution having a pH of 6 to 7 for 1 to.2 minutes in order to apply another electroless plating. Table 6 shows characteristics of thus obtained invented laminated type varistor and a conventional laminated varistor. Embodiment-6 Conventional type V 1mA 40 40 V 1mA /V 10µA 1.09 1.10 V 5A /V 1mA 1.33 1.35 Max surge current (A) 500 500 Change of V 1mA (%) in N-dir. 5 5 The internal electrodes 4a and 4b of the conventional laminated type varistor shown in Table 6 are fabricated by using an electrode paste consisted of platinum powder and organic vehicle, and ceramic layers having a composition same as the one of Embodiment-6 are alternatively laminated, and this laminate is sintered at 1200°C. After fabricating external electrodes 5a and 5b by using the same electrode paste, this laminate is sintered again at a temperature of 800°C. As shown in Table 6, the varistor of Embodiment-6 shows a characteristics by no-means inferior to that of conventional type despite of the lower sintering temperature of Embodiment-6. Two types of ceramic sheets one having a composition of Embodiment-5 shown in Table 4 and one having a composition of conventional Example 2 are prepared, and laminated type varistors made of these ceramic sheets are prepared by employing a method shown in Embodiment-6. The characteristics of these two types of varistors are then determined and shown in Table 7. Embodiment-6 Conventional type V 1mA 40 25 V 1mA /V 10µA 1.08 1.45 V 5A /V 1mA 1.32 1.75 Max surge current (A) 500 100 Change of V 1mA (%) in N-dir. 5 35 Apparent from Table 7, the varistor characteristics of Embodiment-6 is far superior over the one of the conventional type. Inventive Embodiment-7 A seventh embodiment of the invention, or Embodiment-7, is now explained below. Varistors of Embodiment-7 are prepared from materials including ZnO as a main constituent and accessory constituents of Bi 2 O 3 added at an amount of 0.50 mol%, Co 2 O 3 at 0.5 mol%, MnO 2 at 0.15 mol%, Sb 2 O 3 at 0.25 mol%, NiO at 0.25 mol%, GeO 2 at 0.05 mol%, Al 2 O 3 at 0.005 mol%, and B 2 O 3 at 0.05 mol% which are thoroughly mixed, and sintered at a temperature of 930°C. The characteristics of thus obtained varistor are shown in Table 8. On the other hand, the conventional type varistor is prepared by using ceramic materials including ZnO as a main constituent and accessory constituents of Bi 2 O 3 added at an amount of 0.50 mol%, Co 2 O 3 at 0.5 mol%, MnO 2 at 0.15 mol%, NiO at 0.25 mol%, GeO 2 at 0.05 mol%, Al 2 O 3 at 0.005 mol%, and B 2 O 3 at 0.05 mol% is thoroughly mixed, and obtained by applying the previously sintering process. As seen from Table 8, the varistor of Embodiment-7 are superior in respect of the limiting voltage, maximum surge current, and temperature characteristics over those of conventional type varistor. Embodiment-7 Conventional Example-1 Density (g/cm 3 ) 5.36 5.40 V 1mA (V) 335 170 V 1mA /V 10µA 1.15 1.23 V 25A /V 1mA 1.36 1.52 Change of surge V 1mA . P-dir. (2000A) -3.9 -52.3 Temp. coef. (125°C) Change of V 1mA 0.4 -15.3 Although Sb 2 O 3 /Bi 2 O 3 is set at 0.5 (mol%) in Embodiment-7, the varistor characteristics is optimum at this condition. Since the varistor element and the electrodes can be sintered simultaneously, and the shrinkage coefficients of varistor element and the electrode at sintering are same, not only the adhesion between the electrodes and the varistor element but the other characteristics can be improved. Moreover, considering the same composition of invented varistor element 1, the varistor voltage can be higher for the lower sintering temperature. Although the density of varistor element could be higher when it is sintered at a lower temperature and for a long period, it tends to sacrifice the other characteristics. Although Ag is used as the electrode material in this embodiment. Ag-Pd can be used as well.

Claims: A varistor comprised of a sintered varistor element (1) and a pair of electrodes (2a,2b) provided on both sides of said varistor element (1), said varistor element (1) containing zinc-oxide as a main constituent and bismuth as an accessory constituent and containing boron as an additional accessory constituent in an amount of 0.01 to 0.5 mol% B 2 O 3 in terms of B 2 O 3 and at least one of antimony or phosphor as additional accessory constituents; wherein the content of bismuth in terms of Bi 2 O 3 is in a range from 0.1 to 4.0 mol% and the content of antimony or phosphor in terms of Sb 2 O 3 or P 2 O 5 satisfies a condition of (Sb 2 O 3 + P 2 O 5 ) ≤ 1.0 mol% providing that the content of P 2 O 5 is less than 0.3 mol% and the mol-ratio of (Sb 2 O 3 + P 2 O 5 )/Bi 2 O 3 is less than 1.0, said pair of electrodes are prepared by simultaneously sintering Ag paste of Ag-Pd paste with said varistor element at a temperature of 800 to 960°C. A varistor related to Claim 1, containing at least more than one of lead, germanium, or tin as additional accessory constituents for a total amount of (PbO + GeO 2 + SnO 2 ) ≤ 0.5 mol% in terms of PbO, GeO 2 or SnO 2 . A varistor related to Claim 1, containing aluminum as an additional accessory constituent for an amount of from 0.001 to 0.01 mol% in terms of Al 2 O 3 . A method for manufacturing the varistors as defined in one of claims 1 through 3, wherein the main and accessory constituents are uniformly mixed into a mixture, said mixture is formed to a sheet like compact by a method such as press molding, an electrode-paste is applied to both sides of said compact and finally said compact and said electrode paste applied thereon are simultaneously sintered at a temperature of 800 to 960°C, wherein Ag paste or Ag-Pd paste is used as said electrode paste. The method according to claims 4, wherein a plurality of compacted sheets is formed into a laminate and a pair of internal electrodes is disposed on said sheets alternatively exposing the edges of said internal electrodes at the side edge of said sheets, wherein a pair of external electrodes on those edge surfaces of said laminate is provided and said internal and external electrodes are simultaneously sintered at said temperature of 800 to 960°C.

Inventors: MUTOH NAOKI, TOKUNAGA HIDEAKI, WAKAHATA YASUO, MUTOH, NAOKI, TOKUNAGA, HIDEAKI, WAKAHATA, YASUO
Applicants: MATSUSHITA ELECTRIC IND CO LTD, MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
Application year: 1994
Main classification: H01C7
IPC codes: H01C7