IMPROVED DEFECT MAPPING SYSTEM

Abstract: Apparatus for detecting and mapping defects in the surfaces of polycrystalline materials to distinguish dislocation pits from grain boundaries includes a laser (16) for illuminating a wide spot on the surface (20) of the material (14), a light integrating sphere (22) with apertures (24, 26) for capturing light scattered by etched dislocation pits in an intermediate range away from specular reflection while allowing light scattered by etched grain boundaries in a near range from specular reflection to pass through, and optical detection devices (40, 50) for detecting and measuring intensities of the respective intermediate scattered light and near specular scattered light. A center blocking aperture (44) or filter can be used to screen out specular reflected light, which would be reflected by nondefect portions of the polycrystalline material surface. An X-Y translation stage (12) for mounting the polycrystalline material and signal processing and computer equipment accommodate raster mapping, recording, and displaying of respective dislocation and grain boundary defect densities.

Description: Description Improved Defect Mapping System The United States Government has rights in this invention under Contract No. DE- AC02-83CH10093 between the U.S. Department of Energy and the National Renewable Energy Laboratory, a Division of Midwest Research Institute. Technical Field This invention is related generally to techniques for mapping defects on semiconductor surfaces and more particularly to an optical system that can distinguish dislocation pits from grain boundaries in mapping polycrystaUine device surfaces. Background Art The quality and suitability of crystalline and polycrystaUine materials, such as silicon, gallium-arsenic, and others, for use as substrates for semiconductor applications are affected by defects, such as dislocations, in the crystalline structures. Generally, higher densities of dislocations are indicative of lower quality materials. Therefore, there is a need for systems to detect, measure, and map dislocation densities in crystalline and polyciystalline materials for purposes of analysis and quality control. There are a number of systems that have been developed to detect and map dislocation densities. The methods used most commonly in the industry currently utilize a surface cleaning or polish step followed by some variation of an etch, which reveals dislocations that intersect the surface of the material by forming a pit at each dislocation site. The pits can then be detected, counted, and mapped, and the density of the pits, i.e., the number of pits per unit of surface area, can be determined. This etch pit density (EPD) is considered by persons skilled in this art to be a reliable indicator of the number and density of dislocations in the substrate, and the pits have patterns that reflect slip planes in the crystal lattice of the material. The most commonly used method of detecting and counting pits to determine EPD is visual observation through a microscope and counting. This process is obviously labor intensive, time consuming, and tedious work. Some alternative systems based on optical technologies to detect and map EPDs have been developed that apparently work on monocrystalline substrates, but none have been developed that work reliably for polycrystaUine substrates. For example, the U.S. Patent No. 4,925,298, issued to P. Dobrilla, compares specularly reflected light from an etched sample surface to light reflected from a reference surface to determine EPD. U.S. Patent No. 5,008,542, issued to D. -Look et al. is similar, except that it detects light transmitted through the substrate rather than reflected light. In both of those techniques, the spectral light is detected, so an increase of dislocation density results in an increase of scattered light, and thus a decrease in detection signal. However, polycrystaUine substrates present major problems for those systems, because grain boundaries cause substantial light scattering, thus affecting light detection signals and skewing EPD measurements. It has also been shown and is not well known in the industry that light scattering from a defect-etched surface can be used to determine surface dislocation numbers statistically. In fact, as reported in B.L. Sopori, "Use of optical scattering to characterize dislocations in semiconductors," 22 APPL OPTICS 4676 (1988), it has been determined that the total integrated light scattered from an illuminated region of a defect-etched surface is proportional to the number of dislocation etch pits in that area, provided that the surface is etched for defect delineation. A light integrating sphere positioned on the surface of the material collects and integrates substantially all of the scattered light, and a photodetector mounted in the integrating sphere measures the integrated light intensity, thus the extent of EPD in an illuminated area on the surface. Again, however, while that large beam statistical EPD detection and mapping technique works well for many applications involving single-crystal materials, it does not work well with polycrystaUine structures. Grain boundaries in polycrystaUine materials are "grooved" in the defect etching process required for defect delineation, so scattering of light by the grain boundaries can cause a larger amplitude integrated light in the integrating sphere, and thus an erroneous EPD signal. Disclosure of the Invention A general object of this invention, therefore, is to provide an improved defect mapping system for crystalline materials. Another general object of this invention is to provide a defect mapping system that is useable and accurate on polycrystaUine materials, as well as crystalline materials. A more specific object of this invention is to provide an optical scattering defect mapping system wherein light scattered by etched dislocation pits can be discriminated from light scattered by grain boundaries. Another specific object of this invention is to provide an improvement to large beam statistical EPD detection and mapping systems that can be used on both single-crystal and polycrystaUine materials. -An even more specific object of this invention is to provide an improved large beam statistical EPD detection and mapping system that can be adjusted to detect and map either the EPD or grain boundaries of a polycrystaUine material. Additional objects, advantages and novel features of this invention shall be set forth in part in the description that follows, and in part will become apparent to those skilled in the art upon examination of the following specification, or may be learned by the practice of the invention. The objects and advantages of the invention may be realized and attained by means of the instrumentalities, combinations, and methods particularly pointed out in the appended claims. To achieve the foregoing and other objects and in accordance with the purposes of the present invention, as embodied and broadly described therein, a defect mapping system includes a method for scattering light from the surface of a crystalline material that contains two types of defects (for example, dislocation defects and grain boundary defects) such that the fust type of defect scatters light in a first pattern, and the second type of defect scatters light in a second pattern. The first type of pattern for dislocations produces a two-dimensional image with a light intense area surrounding a light void area. The second type of pattern for grain boundaries produces a practically one-dimensional image, some of which is distributed in the light void area of the first pattern and some of which extends through and beyond the light intense area of the first pattern. The light intense area of the first pattern is captured in a light integrating sphere for detection. The light of the second pattern that is near spectralis passes through the light integrating sphere for separate detection. Alternatively, the far spectral dispersion of light in the second pattern can be diverted and detected in front of the light integrating sphere. The surface preparation that produces these distinct patterns of scattered light includes an etch procedure that creates etch pits at dislocation sites of about equal volume, regardless of dislocation orientation, and V-shaped grooves at grain boundaries. Prief Description of Prawings The accompanying drawings, which are incoiporated in and form a part of the specifications, illustrate the preferred embodiments of the present invention, and together with the descriptions serve to explain the principles of the invention. In the Drawings: Figure 1 is a schematic diagram of the improved defect mapping system of the present invention; Figure 2 is an enlarged schematic illustration of the optical components of the system shown in Figure 1; Figure 3 a is a schematic representation of the scattered light rays from an illuminated crystalline material sample that has an etched surface to reveal and delineate defects, particularly dislocations, in the crystalline material; Figure 3b is a representation of a typical scattered light pattem from an illuminated crystalline sample that has been etched according to this invention; Figure 3c is an enlarged view of etch pits on the surface of a silicon sample, wherein the etch pits are substantially circular in shape; Figure 3d is a photograph of an actual light pattem that has been scattered by the surface of the silicon sample of Figure 3c according to this invention; Figure 3e is an enlarged view of etch pits on the surface of a silicon sample, wherein the etch pits are substantially elliptical in shape; Figure 3f is a photograph of an actual light pattern that has been scattered by the surface of the silicon sample of Figure 3e; Figure 3g is an enlarged view of etch pits on the surface of a silicon sample, wherein the etch pits are two different shapes (resembling ellipses); Figure 3h is a photograph of an actual Ught pattern that has been scattered by the surface of the silicon sample of Figure 3g; Figure 4a is a schematic illustration of light rays scattered by a V-shaped etch grain boundary in a polycrystaUine material; Figure 4b is an Ulustration of the pattern of Ught scattered by a V-shaped etch grain boundary of Figure 4a; Figure 5 illustrates the grain boundary light pattem of Figure 4b superimposed on the etch pit light pattem of Figure 3b, which combination occurs when a beam illuminating an etch pit sample surface encounters an etch grain boundary, as illustrated in Figure 2; Figure 6 is an illustration of the central part of the grain boundary scattered Ught pattern that is captured separate from the etch pitch scattered light according to this invention; Figure 7 is an illustration of the grain boundary scattered light pattem of Figure 6 after removal of the center spot and converging for incidence on a photodetector; Figure 8 is a graph of detector signal intensity (integrated scattered light) plotted versus dislocation density. Detailed Description of Preferred Embodiments The improved defect mapping system 10 of this invention is illustrated schematically in Figure 1. An X-Y translation stage 12 is provided for supporting a crystalline sample or substrate 14 positioned for defect detection and mapping according to this invention. A laser beam generator 16, such as a HeNe laser system capable of generating a laser beam 18 of light with a wavelength of approximately 6,382A, is positioned above the stage 12 and preferably oriented to direct a laser beam 18 perpendicularly onto the exposed surface 20 of the crystalline material of sample 14. A light integrating sphere has two diametrically opposed apertures 24, 26 positioned to allow transmission of the laser beam 18 through the sperical light integrator 22, when it is positioned between the laser generator 16 and the sample 14. However, the sperical integrator 22 captures light rays 30 that are scattered by the surface 20 of sample 14 through the bottom aperture 26. The interior surface 28 of the integrator 22 is coated with a material, such as magnesium oxide, that enhances uniform scattering and the integrated distribution or diffusion of Ught rays 30 captured therein through the bottom aperture 26, as illustrated at 32. A first photodetector 40 positioned in the side of the spherical Ught integrator 22 detects the intensity of diffused Ught 32 in the integrator 22 and produces an analog signal on lead 42 indicative of the diffused light 32 intensity. As illustrated in the graph in Figure 8, and as will be discussed in more detail below, the intensity of the diffused or integrated scattered light 32 in Figure 1, and thus the amplitude of the signal produced on lead 42, is a direct measure of the etched pit dislocation density on the position of surface 20 of sample 14 that is illuminated by laser beam 18. At the same time, the near spectral components 34, 36 of light scattered by etched grain boundaries (not shown in Figure 1, but described below) in the surface 20 of a polycrystaUine sample 14, along with spectral reflection 38, are allowed by bottom aperture 26 and top aperture 24 to pass through the integrating sphere 22, as illustrated in Figure 1. The spectral component 38, which is primarily comprised of Ught reflected by smooth portions ( i.e., nondefect portions) of the surface 20 of sample 14, is blocked and eliminated by an opaque center 46 of a center blocking aperture 44, while the near spectral components 34, 36 are passed to a converging lens 48 and to a second photodetector 50. Since most of the Ught that reaches this second photodetector 50 is the near spectral component of light scattered by etched grain boundaries, as will be described in more detail below, a strong electric signal produced on lead 52 by photodetector 50 indicates the presence of a grain boundary in the portion of the surface 20 of sample 14 that is illuminated by the laser beam 18. The signal processing and control unit 60 shown in Figure 1 processes and stores the signals from the photodetectors 40 and 50 in conjunction with the X-Y position information of the stage 12, as the stage 12 rastors the sample 14 under the laser beam 18. Therefore, visual displays or other outputs of EPD or grain boundary mapping can be produced for all or any desired portion of the surface 20 of sample 14. Referring now to Figures 3a and 3b, a crystalline sample 14 with etch pits 70 in the surface 20 where dislocation defects occur is shown illuminated by a laser beam 18. When properly etched, as will be described in more detail below, the etch pits 70 scatter the light in a definite and repeatable pattern 72, as illustrated in Figure 3b. The pattem 72 in Figure 3b is the projection of the scattered light beams in Figure 3a on the plane 74. Essentially, the etch pits 70 scatter most of the incident light from beam 18 in a conical pattem, as show in Figure 3a, between about five degrees (5 °) and twenty degrees (20°) from normal. The beams 76 illustrate the inner boundary of this range, and the beams 78 illustrate the outer boundary. Corresponding boundaries 76 and 78 define the primary high intensity light ring 80 of the resulting pattern 72 in Figure 3b. A fringe ring 82 of less intensity surrounds the primary ring 80, as depicted by scattered fringe rays 84. The center circle 73 of pattern 72 is essentially devoid of scattered light from the etch pitted surface 20. All of the scattered light in the primary ring 80 and the fringe ring 82 of pattern 72 is collectively designated as the etch pit scattered light 30, for convenience in describing this invention. Figure 3d is an illustration of a pattem 72 produced by scattered light from the substantially circular shaped etch pits in Figure 3c. Such circular shaped etch pits indicate dislocation defects that are oriented substantially normal to the surface, and, when etched as described below for this invention, will always produce the characteristic circular pattem of etch pit scattered light shown in Figure 3d and depicted in Figure 3b. In contract, dislocation defects that are oriented oblique to the surface produce elliptical shaped etch pits, as shown in Figure 30. Such elliptical etch pits produce an elliptical shaped pattem of etch pit scattered light, as shown in Figure 3f. A mixed set of etch pits comprising both circular and elliptical shapes in close proximity, as shown in Figure 3g, will produce an irregular-shaped etch pit scattered light pattem, as shown in Figure 3h. Referring now momentarily to Figures 1 and 2, the bottom aperture 26 of the spherical light integrator 22 is sized and positioned to admit most of the etch pit scattered light 30, for example, about 20 to 40 degrees from normal. Preferably, the top aperture 24 is sized and positioned to not allow light rays 30 scattered from the surface 20 wider than about 5 ° from normal to pass through. In other words, the top aperture 24 preferably coincides substantially with the void center circle 73 of the etch pit scattered light pattem 72 of Figure 3b. Consequently, most of the etch pit scattered light 30 is captured and retained by the sperical light integrator 42, where it is integrated to produce intense diffuse light 32 to induce a strong signal from photodetector 40. At the same time, very little of the etch pit scattered light 30 escapes through top aperture 24 to reach the second photodetector 50, so any signal produced by photodetector 50 is not influenced significantly by etch pit scattered light 30. Referring now primarily to Figures 4a and 4b, a grain boundary 90 in a polycrystaUine material, when etched as described below, will produce a V-shaped groove 92 that is essentially one-dimensional and runs the length of the grain boundary 90 along the surface 20 of the sample 14. Light incident on such etch grain boundaries 90 is scattered in a substantially fan-shaped distribution 94 in a plane that is perpendicular to the surface 20. When the fan-shaped scattered light distribution 94 is projected onto a plane 96 that is parallel to surface 20, it forms a pattem, 98 of divers elongated spots 101-108 . . .. as illustrated in Figure 4b. The circular center spot 100 is substantially specular reflection or retroreflection from the V-shaped groove 92 or the surface 20. Referring again, now, to Figure 2, a polycrystaUine sample 14 is Ulustrated on X-Y stage 12, with a grain boundary 90 and a V-shaped etch groove 92 where the grain boundary 90 intersects the surface 20, similar to that illustrated in Figure 4a and described above. The surface 20 also has etch pits 70 where dislocations intersect the surface 20; however, the size and density proportions are not illustrated to scale because of limitations inherent in these kinds of iUustrations for microscopic features. As shown in Rgure 2, a fairly wide or large diameter beam 18 is used to illuminate a sufficiently large portion of the surface 20 to obtain a good statistical sample of etch pits. Therefore, there is no attempt to focus the beam 18 to a point on the surface 20. In fact, a point focus is avoided. Generally, it is preferred to include at least 200 etch pits in the illuminated area, which usually requires a beam 18 diameter of about 500 to 1,000 μm. As also shown in Figure 2 for purposes of illustrating additional features of this invention, the V-shaped grain boundary etch groove 90 is positioned in the area iUuminated by beam 18. Consequently, both an etch pit scattered Ught pattern, such as one of the patterns illustrated in Figures 3a through 3h, and a boundary grain etch scattered light pattem, such as the pattern 98 illustrated in Figures 4a and 4b, are produced together. The result is a combination etch pit light scattered pattern, such as pattern 72 of Figures 3a and 3b, combined with a boundary grain etch pattern 98 of Figures 4a and 4b. The combination of these patterns 72 and 98 is illustrated in Figure 5. The specular components 38 of Figures 2 and 4a that produce center spot 100 of Figures 4b and 5, and the near specular components 34 and 36 of Figures 2 and 4a that produce the inside spots 101 and 102, respectively, of Figures 4b and 5 deviate from spectral normal for the most part less than five degrees (5 °). Therefore, as best illustrated in Figures 2 and 5, those light components 34, 36, and 38 and their corresponding spots 100, 101, and 102 are for the most part confined in the center area 73 that is substantially devoid of etch pit scattered light 30. Therefore, as shown in Figure 2, the top aperture 24 of the sperical light integration 22 allows the Ught components 34, 36 and 38 scattered or reflected by the boundary grain etch groove 90 to pass out of the integrator 22. Therefore, the limited pattern shown in Figure 6 comprising only spots 100, 101 , and 102 reaches the plane 112 of the center block aperture 44 in Figure 2. The spectral component 38 is subsequently blocked and eliminated from the system 10 by the center block aperture 44 as mentioned above. Consequently, only the near spectral light components 34 and 36 scattered by the boimdary grain etch groove 90 pass through the optical integrator 22 and reach the second photodetector 50. Substantially all of the etch pit scattered light 30 is captured in the optical integrator 22, as described above, and is detected only by the first photodetector 40. As a result, the signal produced by the second photodetector 50 is essentially the result of a grain boimdary 90 in the area of illumination by beam 18. This signal on lead 52, therefore, can be processed, discriminated, and used for detecting and mapping grain boundaries in polycrystalUne materials as distinct from dislocation defects. The light components 34, 36, and 38 that pass through the top aperture 24 of optical integrator 22 are collimated by a lens 114, reflected out of the normal path by beam splitter or partially silvered mirror 116, and directed to the center block aperture 44- As mentioned above, the projected light components 34, 36, and 38 that reach plane 112 of aperture 44 are sub¬ stantially as show in Figure 6- The aperture 44 has an annular opening 45 large enough to pass substratial portions of the near spectral components 34 and 36 and a center block 46 large enough to block the spectral component 38. A convex lens 118 converges and focuses the near spectral components 34 and 36 onto the second detector 50, so that the projection of the light, essentially comprising those near spectral components 34 and 36 appears as the near spots 101 and 102, illustrated in Figure 7, sans the spectral component 38 and circular center spot 100. It is important to eliminate the spectral component 38, because a substantial portion of the spectral component 38 can be, and probably is, Ught reflected from smooth, nondefect areas of the surface 20 of the polycrystaUine material 14 adjacent the grain boundary 90, and thus could also be present in the signal from the second photodetector 50, even if there is no grain boundary in the area of illumination. Elimination of the center component 38 insures that the only signal from the photodetector 50 is from a grain boundary defect. It may be noted that the more divers components of the grain boundary scattered light 94 that produce the intermediate spots 103-108 in the pattern 98, as illustrated in Figures 4a, 4b, and 5, will not pass through the top aperture 24 of optical integrator 22, and thus will be captured along with the etch pit scattered light 30 inside the optical integrator 22 of Figure 2. If those intermediate components of the grain boundary scattered Ught 94 are intense enough, they can affect and cause erroneous signals of EPD from the first photodetector 40. In fact, if the beam 18 were narrowed to a point, and if the point were focused on the grain boundary etch 92, the resulting grain boundary scattered light 94 intensity inside the optical integrator 22 would probably predominate and could even swamp out any etch pit scattered light intensity. Actually, the first photodetector 40 could operate as a grain boundary 90 detector in that configuration. On the other hand, the effect of the intermediate components of grain boundary scattered light 94 can be minimized in several ways. First, the incident beam 18 can be operated with a wide diameter, thus illuminating a larger area of etch pit defects 70 on the surface 20 of the polycrystaUine material 14. Such wide area illumination substantially increases the intensity of etch pit scattered light 30 inside the optical integrator 22, as compared to the grain boundary scattered light 94. Further, since the problem of the grain boundary scattered Ught 94 is essentially one-dimensional, while the pattem of the etch pit scattered light 30 is two- dimensional, a larger area illumination can minimize the effect of the grain boundary scattered Ught inside the optical integrator 22 that is detected by the first photodetector 40. Additional electronic signal conditioning and processing, as described below, can further minimize the residual effects of the grain boundary scattered light detected by first photodetector 40. Another adjustment that can minimize the effects of divers components of grain boundary scattered light 94 is to increase the distance between the bottom aperture 26 of the optical integrator 22 and the surface 20 of the polycrystaUine material 14. Increasing this distance can allow the farther most components of the grain boundary scattered light 94, which spread at a large angle to normal ( i.e., a smaller angle to the surface 20) to pass beneath the optical integrator 22 and avoid capture by the bottom aperture 26. Of course, raising the optical integrator too far off the surface 20 could cause the outer fringes of the etch pit scattered light 30 to be excluded, too, which could be counterproductive. Widening the bottom aperture 26 while increasing the distance between the optical integrator 22 and the surface 20 could help to capture the outer fringes of the etch pit scattered light 30, but widening apertures can also allow diffuse light inside the optical integrator 22 to escape, thus lowering the intensity and signal strength from the first photodetector 40. Therefore, there is a balance that can be found and maintained between incident beam 18 size, distance between optical integrator 22 and surface 12, and apertures 24 and 26 sizes that provides optimum results and signals for a particular system 10 used in conjunction with a particular polycrystaUine material 14. The larger beam 18 size also increases the rastor increments needed to scan a sample 14, and the statistical base of the method used in this invention -instead of detecting and counting individual etch pits- can combine to substantially increase defect mapping speed and efficiency. Referring again to Figure 1, the EPD signal on lead 42 is directed to a final amplifier circuit 120, where it is conditioned, filtered, cleaned up, and amplified. Likewise, the grain boundary signal on lead 52 is directed to a second amplifier circuit 122, where it is also conditioned, filtered, cleaned up, and amplified. Both signals are then directed via leads 124, 126, respectively, to an algebraic summing circuit 128, where the etch pit or dislocation signal is algebraically summed with (subtracted from) the product of an empirically determined constant times the grain boundary signal to produce a new signal that is indicative of grain boundary for mapping purposes. Initialization can be made on a location that is known to be all dislocation defects and no grain boundary defects. In the opposite mode, the grain boundary signal can be algebraically summed with the product of a constant times the dislocation signal to produce a net signal that is indicative of dislocation density. The dislocation density and grain boundary signals are fed into a computer 130 along with X-Y position information from the stage 12 via connection 132. The data are stored in a high-speed buffer memory. Commercially available computer software, such as "Lab View," produced by of , , and "Delta Graph," produced by , of , ., can be used, with appropriate modifications for particular system hardware and other parameters that would be within the capabilities of persons skilled in this art, to make a map of the dislocation densities and grain boundaries in the material 14, and detailed analysis or displays can be made on the monitor 134 and by a color printer or plotter 136. For example, a defect density map produced with the system 10 according to this invention is shown in Figure 9. Alternatively, the grain boundary data can be used to produce a grain boundary map. For example, the grain boundaries shown in the microscopic photograph of Figure 10a were scanned with the system 10 of this invention, and the grain boundary map in Figure 10b was produced with the data. Alternatively, analog signals from the photodetectors 40 and 50 can be processed by the analog display controller 138 to directly display the dislocation and grain boundary distributions on a storage oscilloscope 140 or an X-Y recorder 142. The preferred etching process for use with this invention is a variation of the chemical etching procedure published by the inventor B.L. Sopori, "A New Etch for PolycrystaUine Silicon," J. Eleclrochem. Soc: SOLID-STATE SCIENCE AND TECHNOLOGY, Vol. 131, No. 3, Page 667 (1984), which produces substantially equal volume etch pits, regardless of dislocation orientation. The following mixtures are used in defect etching: 1) 1:1 of hydrofluoric acid (HF) to water, referred to as the HF rinse. 2) 1 : 1 of nitric acid (HN0 3 ) to water, refeired to as the HN0 3 rinse. 3) 36: 15 :2 of HF to acetic acid (CH 3 C00H) to HN0 3> referred to as Sopori etch. 4) 2:1 of sulfuric acid (H 2 0 2 ), referred to as Piranha. The steps of this procedure include the following: a) Make sure the sample to be etched is clean by checking it under the microscope. If the sample is not clean (there are blobs visible on the surface), it should be cleaned b) Heat the Piranha on the hot plate to 80 ° C (a setting of "Low"). It takes approximately 15-20 minutes to heat the Piranha. It is hot enough when it begins to gently bubble- Do not let the Piranha reach a full boil. If the Piranha was just mixed it does not need to be heated; the heat generated in mixing the H 2 S0 4 and H 2 0 2 is adequate. c) Place the sample in a Teflon sample holder and then let the sample sit in the Piranha for 15 to 30 minutes. The Piranha cleans off any remaining small bits of wax or dirt on the surface of the sample. After the sample has soaked, rinse it off with a stream of deionized (DI) water and blow it dry with the air gun. d) The HF rinse, the HN0 3 rinse, and the etch should be poured from their storage bottles into separate, labeled, plastic one-Uter beakers. FiU a two-liter beaker with DI water for rinsing the samples after etching. e) Dip the sample into the etch and gently wave it back and forth for approximately 30 seconds after bubbles begin to form. Remove the sample from the etch and immediately dip it into the beaker of DI water. Gently wave the sample back and forth for several seconds and then rinse it with a stream of DI water. Dry the sample with the air gun. f) Dip the sample into the HN0 3 rinse and gently wave it back and forth for approximately 15 seconds. Remove the sample and dip it into the beaker of DI water for several seconds. Rinse the sample in a stream of DI water and then dry it with the air gun. g) Dip the sample into the HF rinse and wave it back and forth for approximately 15 seconds. Remove the sample and dip it into the beaker of DI water for several seconds. Rinse the sample in a stream of DI water and then dry it with the air gun. h) After etching, the HF rinse, the HN0 3 rinse, and the etch should be poured back into their storage bottles. The bottles should then be placed together in the square Nalgene secondary container labeled "Defect Etching and Chem PoUshing" in the acid hood. Replace the cover on the secondary container. The Piranha should be left on the hot plate and covered after it has cooled, i) Using DI water, rinse out the beakers from the HF rinse, the HN0 3 rinse, and the etch. Place the beakers upside down in the back right-hand comer of the hood (by the sink) to dry. Wipe off the acid hood countertop. j) Make an entry in the Etch Log stating the date, your initials, the number of samples you etched, and any general comments about what happened when you etched. There is not as yet a set number of times that the HF rinse, the HN0 3 rinse, the etch, and the Piranha can be reused. Part of the purpose of the Etch Log is to establish this time. An alternate embodiment system 200 is shown in Figure 11. In this embodiment, the optical integrator 22 is positioned far enough away from the surface 20 to accommodate the collinating lense 114 and beam spUtter 116 between the integrator 22 and surface 20. The beam splitter 116 diverts part of the grain boundary scattered Ught 96 and etch pit scattered light 30 toward the second photodetector 50 before reaching the optical integrator 22. In this embodiment, the blocking aperture 244 passes only the outer portions 210 and 212 of the grain boundary scattered light 96 to the second detector 50 and blocks everything else. The bottom aperture 26 of optical integrator is large enough to admit the etch pit scattered light 30, but small enough to block the outer portions of grain boundary scattered light 96 that passes through beam splitter 116. The near spectral portions 34 and 36 of grain boundary scattered light 96 that pass through the beam spUtter 116 also pass out the to aperture 24 of optical integrator 22. Therefore, it is only the intermediate portions of grain boundary scattered Ught that enter and get captured in the optical integrator 22 along with the etch pit scattered light 30. This intermediate portion of grain boundary scattered light, as in the embodiment 10 described above, is not sufficient to swamp or degrade the intensity signal for etch pit scattered Ught 30 as long as the incident beam 18 Uluminates a wide enough area on surface 20. The foregoing description is considered as Ulustrative only of the principles of the invention. Furthermore, since numerous modifications and changes will readily occur to those skilled in the art, it is not desired to limit the invention to the exact construction and process shown as described above. Accordingly, all suitable modifications and equivalents may be resorted to falling within the scope of the invention as defined by the claims that follow.

Claims: AMENDED CLAIMS [received by the International Bureau on 14 July 1994 (14.07.94); original claims 7, 9, 11 and 12 amended; remaining claims unchanged (5 pages) 1. A method for detecting and distinguishing between a first type of defect and a second type of defect in the surface of a crystalline material, comprising the steps of: preparing said surface in such a manner that said first type of defect scatters incident Ught in a first pattem and said second type of defect scatters incident light in a second pattern; illuminating said surface with incident light and scattering said incident light from said surface to create said first pattern and said second pattern; separating at least some of the scattered light in said first pattern from at least some of the scattered light in the second pattem; detecting the scattered light of said first pattern as an indication of said first type of defect in the surface of the crystalline material; and detecting the scattered light of said second pattern as an indication of said second type of defect in the surface of the crystalline material. 2. The method of claim 1, including the step of preparing said surface in such amanner that: said first type of defect scatters incident Ught in a first pattem that has an area of intense scattered light and an area of substantially no scattered light; and said second type of defect scatters incident light in a second pattem that at least partially occupies said area in said first pattern that has substantiaUy no scattered Ught from said first type of defect. 3. The method of claim 2, including the step of preparing said surface in such a manner that: said first type of defect scatters incident light in a first pattern that would project a primarily two-dimensional image shape on an intersecting plane; and said second type of defect scatters incident light in a second pattern that would project a primarily one-dimensional image shape on an intersecting plane. 4. The method of claim 3, including the step of detecting the scattered Ught of said second pattern that is in said area of no substantially scattered light in said first pattem as an indication of the presence of said second type of defect in the surface of the crystalline material that is illuminated. 5. The method of claim 4, including the steps of: capturing most of the scattered light in said first pattern in a Ught integrating sphere and creating an integrated diffuse light in said sphere while substantially precluding the scattered light of said second pattem that is in said area of substantially no scattered Ught in said first pattern from being captured in said light integrating sphere; and detecting diffuse Ught in said Ught integrating sphere as an indication of the presence of said f st type of defect in the surface of the crystalline material that is illuminated. 6. The method of claim 5, including the steps of Uluminating a portion of said surface of said crystalline material that is large enough to cause the scattered light in the first pattern to substantially swamp any scattered Ught in said second pattem that gets captured in said Ught integrating sphere such that the diffuse light detected in said Ught integrating sphere is practically an indication of only said first type of defect in said surface of said crystaUine material. 7. The method of claim 6, including the steps of preparing said surface in such a manner that said first type of defect scatters incident Ught in said first pattern that has an area of intense scattered light in an intermediate specular range and an area of substantially no scattered light in a specular range and a near specular range. 8. The method of claim 7, including the step of preparing said surface in such a manner that said second type of defect scatters incident light in said second pattem that has at least some scattered light in said near specular range. 9. The method of claim 8, including the step of capturing most of the scattered light in the intermediate specular range in said Ught integrating sphere and allowing most of the scattered light in said near specular range to pass through the Ught integrating sphere. 10. The method of claim 9, including the step of detecting the scattered Ught that passes through said Ught integrating sphere as an indication of the presence of a second type of defect in the surface of said crystaUine material. 11. The method of claim 10, including the step of blocking Ught in the specular range that passes through said Ught integrating sphere from being detected along with the Ught in the near specular range. 12. The method of claim 7, including the step of preparing said surface in such a manner that said second type of defect scatters incident Ught in said second pattern that has at least some scattered light in a far specular pattern. 13. The method of claim 12, including the step of capturing most of the scattered light in the intermediate specular range in said light integrating sphere and precluding most of the scattered Ught in said far specular region from entering said Ught integrating sphere. 14. The method of claim 13, including the step of detecting the scattered light that is precluded from entering the light integrating sphere as an indication of the presence of said second type of defect in the surface of the crystalline material. 15. The method of claim 5, including the step of illuminating a portion of said surface of said crystalline material that is small enough that there is insufficient light scattered from said first type of defect to prevent light scattered from said second type of defect from causing substantial changes in diffuse light detected in said light integrating sphere such that a substantial increase in diffuse light detected in the light integrating sphere can indicate a second type defect in the area of the surface of the crystalline material that is illuminated. 16. The method of claim 1 , including the step of preparing said surface in such a manner that dislocation defects in the surface of the crystalline material scatter Ught in said first pattem. 17. The method of claim 16, including the step of preparing said surface in such a manner that etch pits of about equal volume are created at substantially all dislocation defects that interest said surface. 18. The method of claim 1 , including the step of preparing said surface in such a manner that grain boundary defects at the surface of the crystalline material scatter light in said second pattern. 19. The method of claim 1 , including the steps of: selecting siUcon as the crystalline material; cleaning the surface of the crystalline material by application of a mixture of sulfuric acid and hydrogen peroxide; dipping the crystalline material in an etch solution comprising hydrofluoric acid, acetic acid, and nitric acid to create etch pits at dislocation sites and V-grooves at grain boundary sites in said surface; rinsing the crystalline material in nitric acid to form a siUcon dioxide coating on the surface; applying hydrofloric acid rinse to the crystalline material; and rinsing the crystalline material with water. 20. The method of claim 1 , including the steps of: detecting said first type of defect and said second type of defect at a plurality of locations on said surface; coUecting and recording information relating to said first type of defect and said second type of defect at each location in conjunction with information that identifies the position of each location in relation to the positions of other ones of the locations; creating a map of the surface of the crystalline material using the defect type and location information that displays either the first type of defect, the second type of defect, or both the first and second types of defects in scaled spatial relation to each other. STATEMENT UNDER ARTICLE 19 The Amendments made to Claims 7, 9, 11, and 12 described in the accompanying Letter Describing Differences Between Replaced Sheets and Replacement Sheets submitted concurrently herewith, are presented to correct any possible indefiniteness in the Qaims. The Amendments were made to correct obvious spelling and typographical errors. The changes are supported by the Figures in the appUcation.

Inventors: SOPORI BHUSHAN L, SOPORI, BHUSHAN, L.
Applicants: MIDWEST RESEARCH INST, MIDWEST RESEARCH INSTITUTE
Application year: 1994
Main classification: G01N21
IPC codes: G01N21