Method and apparatus for producing a silicon single crystal

Abstract: A method of producing a silicon single crystal by the floating-zone method, comprising the steps of: providing a polysilicon rod(1) having an average grain length of 10 to 1000 µm; heating a portion of the polysilicon rod(1) to form a molten zone(2) while applying a magnetic field of 300 to 1000 gauss to the molten zone(2); and passing the molten zone(2) through the length of the polysilicon rod(1) thereby the polysilicon rod(1) is converted into a silicon single crystal ingot(4) through a one-pass zoning of the floating zone method. An apparatus for reducing the method into practice is also described.

Description: The present invention relates generally to high-purity silicon single crystal growth method and apparatus, and more particularly to a method of and an apparatus for producing a single crystal from a polysilicon rod by a one-pass zoning of the floating-zone (FZ) method. The FZ method and the Czochralski (CZ) method have been used as methods of growing single crystals of silicon. The FZ method, due to its capability of growing high purity silicon single crystals with little contamination of oxygen and others than ones grown by the CZ method, is particularly useful to produce high resistivity silicon single crystals for fabricating high-power semiconductor devices. In the production of a silicon single crystal by the FZ method, a polysilicon rod is used as a raw material. The polysilicon rod is produced from trichlorosilane deposited on a silicon core rod in vapor phase to such an extent that the grown polysilicon has an average grain length of 10 to 1000 µm. To grow single crystal, one end of the polysilicon rod is shaped into a conical form and the tip of the conical end is melted and fused with a seed crystal. Then, the polysilicon rod and the seed crystal are united together while eliminating dislocations by forming a bottle neck. A silicon single crystal is grown by recrystallizing a molten silicon. The molten zone, formed by heating the polysilicon rod partially with an annular induction heating coil, is passed from the seeded end of the polysilicon rod to the other end by moving down the polysilicon rod and the grown single crystal simultaneosly relative to the induction heating coil, while rotating the polysilicon rod and the grown single crystal with a concentric or an eccentric mode. A method for growing a silicon single crystal rod with applying a magnetic field to the molten zone is known from EP 0 504 929 A1. According to said document a magnetic field forming means produces a magnetic field with an intensity of 190 gauss to 600 gauss. Said magnetic field forming means is situated above and/or below the melting zone. EP 0 345 618 A2 teaches to use trichlorosilane to produce polycrystalline silicon having a grain size of 1,000 to 25,000 nm. What is to be taken from WO 86/04619 A1 is a ribbon-to-ribbon conversion system method and apparatus for converting silicon in ribbon form. In this case, the heating means is in the form of a laser beam in connection with a reflector. Said reflector serves for concentrating radiation energy in said beam to a focussing point in the ribbon. Furthermore, post-heaters are provided for controlling thermal stresses in the ribbon. According to the prior FZ method, production of silicon single crystals by a one-pass zoning is hardly achievable. Accordingly, the conventional FZ method for producing the silicon single crystals requires a two-pass zoning, i.e., the "pre-zoning" and "dislocation-free zoning". At the first zoning of the FZ method, called "pre-zoning", an intermediate polysilicon rod is formed, and at a the succeeding FZ growth run, called "dislocation-free zoning", the intermediate polysilicon rod is converted into a silicon single crystal ingot. It was ineffective for a silicon single crystal production to apply the two-pass zoning process. With the foregoing drawback of the prior art in view, it is an object of the present invention to provide a method of and an apparatus for producing a dislocation-free silicon single crystal by a one-pass zoning of the FZ method. According to a first aspect of the invention, the above object is achieved by a method of producing a silicon single crystal by the floating-zone method, characterized by: providing a polysilicon rod having an average grain length of 10 to 1000 µm; heating a portion of the polysilicon rod to form a molten zone while applying a magnetic field of 300 to 1000 gauss to the molten zone; passing the molten zone through the length of the polysilicon rod, thereby converting the polysilicon rod into a silicon single crystal ingot through a one-pass zoning run of the floating zone method; and post-heating the silicon single crystal being grown, for extending the distance between the solid-liquid interface (10) of the polysilicon side and the solid-liquid interface (11) of the single crystal side. The method according to the invention may include controlling the heating, so that a solid-liquid interface between the polysilicon rod and the molten zone is held at a level equal or higher than the underside of the induction heating coil. Said magnetic field may be a static magnetic field applied in a direction parallel and/or perpendicular to a direction of growth of the silicon single crystal. According to a second aspect of the present invention there is provided an apparatus for carrying out a floating-zone method for producing a silicon single crystal, comprising: means for heating a portion of the polysilicon rod to form a molten zone; means for applying a magnetic field of 300 to 1000 gauss to the molten zone; and means for passing the molten zone through the length of the polysilicon rod, thereby converting the polysilicon rod into a silicon single crystal ingot through a one-pass zoning of the floating zone method, further comprising means for post-heating the silicon crystal ingot for extending the distance between the solid-liquid interface (10) of the polysilicon side and the solid-liquid interface (11) of the single crystal side. Said means for post-heating may be provided in the form of a reflector disposed around the silicon single crystal ingot being grown and located near the molten zone. Said means for applying a magnetic field may be disposed on at least one of opposite sides of the molten zone as viewed from a direction of growth of the silicon single crystal. Said magnetic field may be a static magnetic field acting in a direction perpendicular and/or parallel to the direction of growth of the silicon single crystal. Said means for applying a magnetic field may be a solenoid coil excitable with a direct current. Furthermore, said heating means may be an induction heating coil. The above and other objects, features and advantages of the present invention will become manifest to those versed in the art upon making reference to the detailed description and the accompanying sheets of drawings in which preferred structural embodiments incorporating the principle of the present invention are shown by way of illustrative example. FIG. 1 is a diagrammatical view showing a silicon single crystal growth method according to the present invention; FIG. 2 is a diagrammatical vertical cross-sectional view showing the general construction of a silicon single crystal growth apparatus according to an embodiment of the present invention; FIG. 3 is a view similar to FIG. 2, but showing an apparatus according to another embodiment; and FIG. 4 is a diagrammatical view showing the behavior of polysilicon granules in a molten zone observed during crystal growth by the FZ method. Through investigations and analyses, the present inventor came to a conclusion that the difficulty associated with the conventional FZ method in obtaining a silicon single crystal from a polysilicon rod having an average grain length of 10 to 1000 µm by a one-pass zoning (dislocation-free zoning only) would be due to the behavior of polysilicon granules which are fallen off from the polysilicon rod into a melt, and come to a solid-liquid interface of the single crystal side before they are completely molten, thereby the polysilicon granules convert a growing single crystal into polycrystal. Based on the conclusion, various attempts were made to delay or retard the arrival of the polysilicon granules at the sold-liquid interface of the single crystal side. FIG. 4 diagrammatically shows the cross section of a molten zone formed in the body of a polysilicon rod 1. The grain length of the polysilicon rod 1 is very small. In general, the polysilicon rod made from trichlorosilane has an average grain length of 10 to 1000 µm. In the FZ growth process, the front end 7 of the polysilicon rod 1 is heated by an induction heating coil 5 so that an outer peripheral surface 8 of the polysilicon rod 1 is molten. Polysilicon granules 6 fallen off from the outer peripheral surface 8 are completely molten, partly because the granules 6 are always heated with the induction heating coil 5, and partly because the granules 6 take a relatively long time to move through a relatively long distance between the outer peripheral surface 8 and a solid-liquid interface 11 of the single crystal side. On the other hand, a melting neck portion 9 of the polysilicon rod I is contiguous to a molten zone 2 at a solid-liquid interface 10 of the polysilicon side, so that the neck portion 9 is molten by the heat transmitted from the melt. Polysilicon granules 6 fallen off from the melting neck portion 9, reach the solid-liquid interface 11 of the single crystal side before they are completely molten. This is partly because the distance between the melting neck portion 9 and the solid-liquid interface 11 of the single crystal side is relatively short, and partly because the polysilicon granules 6 make only a short trip as they are accelerated by convection flows descending through a central portion of the molten zone 2, as indicated by broken lines shown in FIG. 4. By the arrival of the polysilicon granules 6 at the solid-liquid interface 11 of the single crystal side, the silicon single crystal being grown is immediately converted into polycrystal. To avoid the foregoing problem, the present invention takes a new method that the distance between the solid-liquid interface 10 of the poly-silicon side and the solid-liquid interface 11 of the single crystal side is extended to enable the polysilicon granules 6 to travel through a longer distance in floating condition within the melt. With this new method, the poly-silicon granules 6 fallen off from the melting neck portion 9 into the melt, are completely molten before they reach the solid-liquid interface 11 of the single crystal side. The silicon single crystal being grown is, therefore, prevented from converting into polycrystal with the result that a silicon single crystal ingot 4 can be grown through a one-pass zoning of the FZ method. The convection in the melt can be controlled or suppressed by applying a static magnetic field to the molten zone 2. Since the electrical conductivity of the silicon melt is high, the convection flow in the silicon melt is considerably suppressed by the Lorentz force when a static magnetic field is applied to the molten zone 2. The strength of the static magnetic field is preferably 300 to 1000 gauss. A static magnetic field of strength smaller than 300 gauss can only insufficiently suppress the convection in the silicon melt. Conversely, a static magnetic field having a strength in excess of 1000 gauss substantially inhibits the convection and the thermal conduction generated by the convection in the silicon melt, and eventually causes solidification of the melt, which consequently may deteriorate the shape and configuration of a silicon single crystal. The static magnetic field to be applied to the molten zone 2 may be a vertical magnetic field or a horizontal magnetic field. Since the convection pattern in the silicon melt is always completed or closed within the molten zone 2, if a convection flow direction, either horizontal or vertical, is suppressed by a static magnetic field in the corresponding direction, the convection flows in any other direction can automatically be suppressed. To provide a longer distance between the solid-liquid interface of the polysilicon side and the solid-liquid interface of the single crystal side, it is particularly effective to keep the solid-liquid interface 10 at a level above the underside of the induction heating coil 5 from the initial stage of formation of the molten zone 2. In this arrangement, a region directly below the solid-liquid interface 10 is effectively heated by the induction heating coil 5 so that the solid-liquid interface 10 of the polysilicon side is prevented from descending toward the solid-liquid interface 11 of the single crystalline side. In addition, the high heating efficiency raises the temperature of the molten zone 2, and enhances the melting speed of the polysilicon rod 6. In practice, the position of the solid-liquid interface 10 of the polysilicon side is adjusted by regulating the power supplied to the induction heating coil. As an additional method to extend the distance between the solid-liquid interface 10 of the polysilicon side and the solid-liquid interface 11 of the single crystal side, the silicon single crystal 4 being grown is post-heated to descend the solid-liquid interface 11 of the single crystal side. Now, certain preferred embodiments of apparatus used for reducing the method of the invention into practice will be described below with reference to FIGs. 1 to 3, wherein FIG. 1 is a diagrammatical view showing a method for producing a silicon single crystal by a one-pass zoning of the FZ method according to the present invention, FIG. 2 is a diagrammatical cross-sectional view of an apparatus for reducing the method of the present invention, and FIG. 3 is a view similar to FIG. 2, showing an apparatus according to another embodiment. As shown in FIG. 2, the silicon single crystal growth apparatus includes a chamber 20 in which an upper shaft 21 and a lower shaft 22 are disposed in vertical alignment with each other. The upper and lower shafts 21, 22 are rotatable about a common vertical axis and reciprocally movable in a vertical direction. A polysilicon rod 1 having a predetermined diameter is attached to the upper shaft 21. A seed crystal 23 having a predetermined crystal orientation is attached to the lower shaft 22. The front end (lower end) of the polysilicon rod 1 is molten with heat generated by an annular or ring-shaped induction heating coil 5 and the molten front end is then fused with the seed crystal 23. The polysilicon rod 1 and the seed crystal 23 are united together while eliminating dislocations by forming a bottle neck. Subsequently, the molten zone 2, formed by heating the polysilicon rod 1 partially with the annular induction heating coil 5, is passed from the seeded end of the polysilicon rod 1 to the other end by moving down the polysilicon rod 1 and the grown single crystal 4 simultaneously relative to the induction heating coil 5, while rotating the polysilicon rod 1 and the grown single crystal 4 with a predetermined rate about a concentric mode. During that time, a single crystal 4 is doped by blowing a predetermined dopant gas onto the molten zone 2 within the chamber 20. In order to provide a longer distance between the solid-liquid interface 10 (FIG. 1) of the polysilicon side and the solid-liquid interface 11 (FIG. 1) of the single crystal side, the solid-liquid interface 10 of the polysilicon side is held above the underside of the induction heating coil 5, and preferably a reflector 13 is disposed in surrounding relation to the silicon single crystal 4 being grown so as to post-heat the growing silicon single crystal 4, as shown in FIG. 1. The chamber 20 is reduced in diameter at a portion extending below the induction heating coil 5 so as to form a reduced step portion 25. At the reduced step portion 25, a solenoid coil 12 of a suitable shape such as annulus is disposed to produce a static magnetic field applied in surrounding relation to the growing silicon single crystal 4. The solenoid coil 12 is excited by a direct current (DC) and constitutes a static magnetic field applying means. The induction heating coil 5 and the solenoid coil 12 are vertically spaced by a predetermined distance. The static magnetic field thus formed acts on the molten zone and suppresses the convection in the molten zone 2. The reduced step portion 25 may be formed on an upper side of the induction heating coil 5 for supporting thereon the solenoid coil 12, as shown in FIG. 3. In this instance, the solenoid coil 12 applies a static magnetic field to the polysilicon rod 1. The static magnetic field thus applied also acts on the molten zone 2 to such an extent that the magnetic field is effective to suppress the convection in the molten zone 2. The invention will now be described by way of the following examples which should be construed as illustrative rather than restrictive. Example 1 Using the apparatus shown in FIG. 2 with a main portion shown on enlarged space in FIG. 1, an experiment was made with the conditions itemized as follows. (1) Raw polysilicon rod 1: 100 mm in diameter, made from trichlorosilane, and having an average grain length of 10 to 1000 µm (2) Seed crystal 23: crystal orientation <111> (3) Rotation rate of raw polysilicon rod 1: 0.4 r.p.m. (4) Rotation rate of silicon single crystal 4: 6 r.p.m. (5) Moving speed of raw polysilicon rod 1 and silicon single crystal 4 relative to induction heating coil 5: 3.0 mm/min (6) Solenoid coil 12: 210 mm in inside diameter, 500 mm in outside diameter and 130 mm in height (7) Static magnetic field: vertical magnetic field of 700 gauss (8) Distance between induction heating coil 5 and solenoid coil 12: 175 mm (9) Post-heating: tubular reflector 13 disposed below induction heating coil 5 with a distance of 25 mm and laminated on its inside surface with a 115 mm-inside-diameter, 400 mm-length tubular silver plate Under the conditions described above, a silicon single crystal having a diameter of 80 mm (Crystal orientation: <111>, Conductivity type: phosphorus-doped n-type) was produced by a one-pass zoning of the FZ method (dislocation-free zoning only). The yield {(total weight of single crystal/ total weight of raw polysilicon rod) x 100} in this process was 73.2%. From the results obtained in Example 1, it is confirmed that according to the method of the present invention, a polysilicon rod is converted into a silicon single crystal ingot by a one-pass zoning of the FZ method (dislocation-free zoning only), the resulting single crystal is excellent in quality, and the productivity of the FZ process is noticeably high. In the embodiments described above, the static magnetic field is applied in surrounding relation to the silicon single crystal. The same result can be obtained when two vertically spaced solenoid coils 12 are disposed on opposite sides of the induction heating coil 5 so as to apply a vertical magnetic field to the molten zone 2. The vertical magnetic field and the horizontal magnetic field may be applied simultaneously. As described above, the silicon single crystal growth method and apparatus according to the present invention can produce a silicon single crystal grown with high productivity by a one-pass zoning of the FZ method.

Claims: A method of producing a silicon single crystal by a floating-zone method, characterized by: providing a polysilicon rod (1) having an average grain length of 10 to 1000 µm; heating a portion of the polysilicon rod (1) to form a molten zone (2) while applying a magnetic field of 300 to 1000 gauss to the molten zone (2); passing the molten zone (2) through the length of the polysilicon rod (1), thereby converting the polysilicon rod (1) into a silicon single crystal ingot (4) through a one-pass zoning run of the floating zone method; and post-heating the silicon single crystal (4) being grown, for extending the distance between the solid-liquid interface (10) of the polysilicon side and the solid-liquid interface (11) of the single crystal side (4). A method according to claim 1, wherein the heating is controlled, so that a solid-liquid interface (10) between a melting neck portion (9) of the polysilicon rod (1) and the molten zone (2) is held at a level equal or higher than the underside of the induction heating coil (5). A method according to claim 1 or 2, wherein said magnetic field is a static magnetic field applied in a direction parallel and/or perpendicular to a direction of growth of the silicon single crystal (4). An apparatus for carrying out a floating-zone method for producing a silicon single crystal, comprising: means (5) for heating a portion of the polysilicon rod (1) to form a molten zone (2); means (12) for applying a magnetic field of 300 to 1000 gauss to the molten zone (2); and means for passing the molten zone (2) through the length of the polysilicon rod (1), thereby converting the polysilicon rod (1) into a silicon single crystal ingot (4) through a one-pass zoning of the floating zone method, further comprising means (13) for post-heating the silicon crystal ingot (4) for extending the distance between the solid-liquid interface (10) of the polysilicon side and the solid-liquid interface (11) of the single crystal side. An apparatus according to claim 8, wherein said means for post-heating is a reflector (13) disposed around the silicon single crystal ingot (4) being grown and located near the molten zone (2). An apparatus according to claim 4 or 5, wherein said means (12) for applying a magnetic field is disposed on at least one of opposite sides of the molten zone (2) as viewed from a direction of growth of the silicon single crystal (4). An apparatus according to any of claims 4 to 6, wherein said magnetic field is a static magnetic field acting in a direction perpendicular and/or parallel to the direction of growth of the silicon single crystal (4). An apparatus according to any of claims 4 to 7, wherein said means for applying a magnetic field is a solenoid coil (12) excitable with a direct current.

Inventors: KIMURA MASANORI, YAMAGISHI HIROTOSHI, KIMURA, MASANORI, YAMAGISHI, HIROTOSHI
Applicants: SHINETSU HANDOTAI KK, SHIN-ETSU HANDOTAI COMPANY LIMITED
Application year: 1994
Main classification: C30B13
IPC codes: C30B13, C30B29, H01L21