Semiconductor laser element

Abstract: A semiconductor laser element comprising a first cladding layer, an optical guiding layer, an active layer and a second cladding layer disposed in this order, or in reverse order on a semiconductor substrate, wherein (a) the refractive index of the optical guiding layer is larger than both refractive indexes of the first and second cladding layers, and (b) the refractive index of the optical guiding layer is smaller than that of the active layer but larger than that of the first cladding layer which element also comprises a burying layer having a refractive index smaller than that of at least one of the first and second cladding layers, said burying layer being disposed on side faces other than the laser-emitting faces of the optical guiding layer and the active layer.

Description: The present invention relates to a semiconductor laser element used, for example, for optical information processing or optical communication. It is known that semiconductor laser performance can be enhanced by efficiently confining light in the active region. In multilayer structure semiconductor laser elements, therefore, there have been employed laminated structures such as a double heterostructure (DH), separate confinement sturcture (SCH) and large optical cavity (LOC) for confining light in the direction vertical to the layers. With the conventional crystal growing techniques such as LPE and MOCVD, hovewer, it is difficult to selectively grow, as a burying layer, a layer having a refractive index which is relatively small in comparison with those of the laminated layers for efficiently confining light in the direction parallel to the layers. Especially, in the case of an AlGaAs-based semiconductor laser, although a semiconductor layer having a relatively small refractive index in comparison with an active layer could be formed as the burying layer, it is impossible to form, as the burying layer, a semiconductor layer having a refractive index which is smaller than that of a cladding layer. It is therefore, for example, infeasible to confine light in the direction, parallel to the laminations in the cladding layer portion. Thus there are disadvantages in that the loss in the cavity is large and the internal quantum efficiency is low. EP-A-0044571 discloses improvements in a buried-heterostructure laser with buried optical guide, and facilitates the oscillation of the laser in the fundamental mode thereof and also enhances the available percentage of production of the laser. An active layer and an optical guide layer are sandwiched between two cladding layers to form an optical confinement region. The width of the semiconductor material assembly varies in the stacking direction of the layers, and the narrowest part thereof is located on the side opposite to the optical guide layer with reference to the position of the active layer. The side surface of said semiconductor material assembly parallel to the travelling direction of laser radiation is buried by a burying layer. From studies by the present inventors a technique has been found for forming a burying layer in an LOC structure. The LOC structure is one of the lamination structures capable of efficiently confining light in the direction vertical to the layers and comprises a first cladding layer, an optical guiding layer, an active layer and a second cladding layer disposed on a substrate in this order or in reverse order. In the present invention the burying layer is a semiconductor layer having a smaller refractive index than that of the cladding layer, and is disposed to side faces other than the laser-emitting faces of the active layer and the optical guiding layer. The present invention therefore provides a semiconductor laser element comprising a first cladding layer, an optical guiding layer, an active layer and a second cladding layer disposed in this order or in reverse order on a semiconductor substrate, wherein (a) the refractive index of the active layer is larger than both refractive indexes of the first and second cladding layers, and (b) the refractive index of the optical guiding layer is smaller than that of the active layer but larger than that of the first cladding layer; which element also comprises a burying layer having a refractive index smaller than that of at least one of the first and second cladding layers, said burying layer being disposed on side faces other than the laser-emitting faces of the optical guiding layer and the active layer, and said burying layer being flush with the surface, or extending into a part, of the cladding layer closer to the semiconductor substrate. The present invention also provides a process for producing an element as defined above which comprises laminating the first cladding layer, the optical guiding layer, the active layer and the second cladding layer in this order or in reverse order on the semiconductor substrate, providing a mask on the laminated layers, carrying out etching until the surface of the cladding layer closer to the semiconductor substrate is bared out or until a part of the cladding layer closer to the semiconductor substrate is etched, and forming the burying layer in the etched out portion, wherein a small amount of an etching gas is flowed together with the layer-forming material gas continuously or intermittently during the forming of the burying layer. Fig. 1 is a schematic illustration of a typical laser element structure according to the present invention. Fig. 2 is a schematic sectional view of a laser element according to the Example 1 of the present invention. Fig. 3 is a schematic sectional view of another laser element according to the Example 2 of the present invention. Fig. 4 is a graph showing the relation between the temperature change and the current-output power characteristics. Fig. 5 is a graph showing the cavity length dependency of external differential quantum efficiency. In the semiconductor laser element according to the present invention, a first cladding layer, an optical guiding layer, an active layer and a second cladding layer are laminated in this order or in reverse order on a semiconductor substrate. Furthermore a burying layer is disposed to the side faces other than laser-emitting faces of the optical guiding layer and active layer. The refractive index of the active layer is larger than both refractive indexes of the first and second cladding layers, and the refractive index of the optical guiding layer is smaller than that of the active layer but larger than that of the first cladding layer. The above structure is a so-called buried-stripe heterostructure in which the LOC structure is used. According to the present invention, the refractive index of the burying layer is smaller than that of at least one of the first and second cladding layers. This relation of refractive indexes is conducive to efficient confinement of laser light in both the direction vertical to the laminations and the direction parallel thereto. Preferably, the refractive index of the burying layer is smaller than that of the first cladding layer, i.e., the cladding layer contacting to the optical guiding layer, and more preferably smaller than the refractive indexes of both the first and second cladding layers. The above-described basic structure of the present invention and a typical example of refractive index distribution are schematically illustrated in Fig. 1. Referring to the structure shown in Fig. 1, the refractive index of the burying layer is smaller than that of the first or second cladding layer. Preferably it is smaller than that of the first cladding layer, more preferably smaller than the refractive indexes of both the first and second cladding layers. Preferably, the burying layer is disposed to side faces of the optical guiding layer, the active layer and at least one of the cladding layers. In this case, the refractive index of the buried cladding layer is preferably smaller than that of the burying layer. More preferably, the burying layer is disposed to side faces of the optical guiding layer, the active layer and both of the cladding layers. The burying layer ordinarily has an energy gap lager than that of the active layer. As variation of the structure of the semiconductor laser element of the present invention, the semiconductor substrate may be constituted by a plurality of semiconductor layers, or a semiconductor layer may be additionally disposed to the side opposite to the optical guiding layer, of the first cladding layer or the side opposite to the active layer, of the second cladding layer. Further, the active layer may be composed of a plurality of semiconductor layers to constitute, for instance, a quantum well structure. Also, the burying layer may have a multilayer structure. In this case, the maximum of the refractive indexes of the layers is smaller than that of at least one of the cladding layers. Preferably, the refractive index of the optical guiding layer is larger than that of the second cladding layer. In the case that the first cladding layer, the optical guiding layer, the active layer and the second cladding layer are laminated in this order on a semiconductor substrate, the first cladding layer and the optical guiding layer are of the same electroconductive type as the semiconductor substrate, and the second cladding layer is of the other electroconductive type. On the other hand, in case that these layers are laminated in reverse order on a semiconductor substrate, the second cladding layer is of the same electroconductive type as the substrate, and the first cladding layer and the optical guiding layer are of the other electroconductive type. The refractive index is usually controlled by crystal mixing of each layer. The semiconductors used for the first cladding layer, the optical guiding layer, the active layer and the second cladding layer in the semiconductor laser element of the present invention are not specified, but usually AlGaAs-based semiconductors or AlGaInP-based semiconductors are used. The former is preferred. As the material of the semiconductor substrate, GaAs, GaP, for example, are usually used. In the following, the present invention is described in detail using an AlGaAs-based semiconductor laer element, which is widely used at present. The semiconductor layers are constituted as described below. A schematic sectional view of an AlGaAs-based semiconductor laser element is shown in Fig. 2. This is identical with the semiconductor laser element produced in the Example 1 of the present invention. Hereinafter, the present invention is described in accordance with the element shown in Fig. 2. On an n-GaAs substrate 10 are laminated a cladding layer 1 composed of n-Al x Ga 1-x As (0.2 < x < 0.7), an optical guiding layer 2 composed of n-Al y Ga 1-y As (0.1 < y < 0.5), an active layer 3 composed of Al w Ga 1-w As (0 ≤ w < 0.3) and a cladding layer 4 composed of p-Al v Ga 1-v As (0.2 < v < 0.8). A burying layer 5 is composed of Al u Ga 1-u As (0.2 < u < 1.0). There is further provided a semiconductor layer 6 which is a GaAs contact layer for facilitating ohmic contact with the electrode. Numerals 11 and 12 refer to the electrodes. The material of these electrodes is not specified in the present invention, but, for instance, 11 may be an AuGeNi/Au electrode and 12 may be a Cr/Pt/Au electrode. The active layer 3, the optical guiding layer 2 and the cladding layers 1 and 4 may be of the known LOC structure. The thicknesses of these layers are not critical, but usually they are selected from within the range of about 0.02 to 0.2 µm for the active layer 3, about 0.03 to 1.0 µm for the optical guiding layer 2 and about 0.2 to 3.0 µm for each of the cladding layers 1 and 4. The stripe width is usually 1 to 7 µm. The conduction type of each of the active layer and the burying layer may be n-type or p-type, but it is preferably i-type, which is not doped with an impurity for conduction. If necessary, a contact layer may be provided between any adjoining said layers. Also, in the semiconductor layer element of this example, an active layer made of GaInP may be used. The thickness of the burying layer 5 is not defined so long as it allows efficient light-confinement of the stripe region. In the area near the stripe region, however, this layer is preferably formed to such a thickness that it becomes flush with the top surface of the second cladding layer. The burying layer preferably extends into a part of the first cladding layer (Fig. 3). It is preferable that the burying layer 5 has a current blocking function for concentrating the applied current in the stripe region, and for this purpose a high-resistance semiconductor layer may be used as the burying layer 5. In order to satisfy the above-defined relations of refractive indexes between the layers, there should exist a relation of w < y < x, and y < v regarding the crystal mixing ratios (ratio of Al to Al and Ga) of the cladding layers, the active layer and optical guiding layer, and a relation of x < u, or v < u regarding the crystal mixing ratios of the burying layer and the cladding layers. In case AlGaInP-based semiconductors are used, there are laminate on an n-GaAs substrate 10 a cladding layer 1 composed of n-Al x Ga 1-x InP (0.2 < x < 0.7), a optical guiding layer 2 composed of n-Al y Ga 1-y InP (0.1 < y < 0.5), an active layer 3 composed of AlGaInP and a cladding layer 4 composed of p-Al u Ga 1-u InP (0.2 < u < 1.0). Other conditions are the same as in the AlGaAs-based semiconductor laser element described above. The semiconductor laser element of the present invention can be produced according to the following process. A first cladding layer, an optical guiding, an active layer and a second cladding layer are grown in this order or in reverse order on a semiconductor substrate by, for example, the MOCVD method. Then a film such as a SiN 4 film is deposited on the cladding layer by, for example, the plasma CVD method. A photoresist is applied on this film and a striped resist pattern is formed by photolithography. With this resist serving as a mask, plasma etching is carried out with, for example, SF 6 , and the resist is removed to form a SiN 4 mask. By using this mask, etching is carried out until the cladding layer closer to the semiconductor substrate or the semiconductor substrate itself is bared out. Then a semiconductor which constitutes a burying layer is formed in the etched away portion by, for example, the MOVCD method in such a manner that the surface of the burying layer portion becomes substantially flush with the stripe portion. Depending on the crystal mixing ratio and the type of the semiconductor used for the burying layer, it may be difficult to carry out selective growth of the burying layer 5 due to a polycrystallization tendency of the layer or a tendency to form a deposit on the mask. Such a problem can be overcome by flowing a small amount (ordinarily 0.1 to 10 sccm, preferably 0.5 to 1 sccm) of an etching gas such as HCl with the layer-forming material gas (ordinarily 30 to 100 sccm). Thereafter, the mask is removed by wet etching with, for example, fluoric acid, and if necessary another semiconductor layer such as a GaAs layer is provided thereon to obtain a desired semiconductor laser element. According to the present invention, it is possible to efficiently confine light even in the direction parallel to the layers. It is also possible to reduce the loss in the cavity and to enhance internal quantum efficiency. This enables a reduction of the threshold current or driving current and high-output operation of laser. Further, since light can be efficiently confined even in the direction parallel to the layers, it is possible to independently design the distribution of light in the direction vertical to the layers of the laminated structure the layers. In this way the shape of the laser beam can be easily controlled and it is possible to make a laser having a circular near or far field pattern. Proper design of the cavity length and stripe width enables multispectral resonance oscillation in the longitudinal mode even at a high output over 30 mW, so that it is possible to make a laser with minimized variation of noise level for the return light. The present invention is now described in more detail in the following Examples. The values of the refractive indexes shown in the Examples are those at 900 nm wavelength. Example 1 A 1.0 µm thick n-type Al 0.4 Ga 0.6 As cladding layer 1 (doped with Si; n = 1 × 10 18 cm -3 ; refractive index: 3.34), a 0.1 µm thick n-type Al 0.3 Ga 0.7 As optical guiding layer 2 (doped with Si; n = 5 × 10 17 cm -3 ; refractive index: 3.40), a 0.05 µm thick undoped GaAs active layer 3 (refractive index: 3.60) and a 1.0 µm thick p-type Al 0.5 Ga 0.5 As cladding layer 4 (doped with Zn; p = 1 × 10 18 cm -3 ; refractive index: 3.28) were grown in this order on an n-type GaAs substrate 10 (doped with Si; n = 1 × 10 18 cm -3 ) by the MOCVD method. On the resultant wafer, a SiN 4 film was deposited by plasma CVD, and a photoresist was applied on this SiN 4 film. A resist pattern was formed on the SiN 4 film by photolithography for forming a striped pattern. With this resist serving as a mask, SF 6 plasma etching was carried out and then the resist was removed to form a SiN 4 mask with a width of 5 µm. By using this mask, etching was carried out to the extent that the cladding layer 1 was bared out, thereby forming a ridge stripe. Then, an undoped Al 0.6 Ga 0.4 As layer 5 (refractive index: 3.22) was formed in the etched out portion by the MOCVD method so as to substantially make up for the loss by etching, in such a manner that the surface of this burying layer would become substantially flat. During this operation, a small amount (0.5 sccm) of HCl was flowed continuously together with the layer-forming material gas (50 sccm) so as to prevent polycrystallization on the mask. Thereafter, the SiN 4 mask was removed by wet etching with fluoric acid, and a 2 µm thick p-type GaAs layer 6 (doped with Zn; p = 2 × 10 19 cm -3 ) was grown by the OCVD method. Then, electrodes were provided to obtain a semiconductor laser element. Similarly, semiconductor elements having various cavity lengths were produced. Fig. 4 is a graph showing the relation between temperature change and the current-output power characteristics of the laser with a stripe width of 5 µm and a cavity length of 300 µm. At 20 °C, the threshold current was 12 mA and the driving current at 30 mW was 68mA, and at 80°C, the threshold current was 18 mA, and the driving current at 30 mW was 85 mA. Fig. 5 is a graph showing the cavity length dependency of external differential quantum efficiency. The internal differential quantum efficiency (ηi) and the cavity loss (αi) as calculated from the intercepts and inclination of the straight line in the graph were 93% and 5 cm -1 , respectively, which represented an improvement over the conventional AlGaAs laser elements in which ηi and αi are of the order of 60-90% and 20-30 cm -1 , respectively. Example 2 Semiconductor laser elements were produced in the same way as in Example 1 except that the etching was carried out to the extent that part (0.2 µm thickness) of the first cladding layer 1 was removed. At 20 °C, the threshold current was 10 mA and the driving current at 30 mW was 65 mA, and at 80°C, the threshold current was 16 mA, and the driving current at 30 mW was 80 mA. The internal differential quantum efficiency (ηi) and the cavity loss (αi) were 95% and 4 cm -1 , respectively. Comparative Example 1 Semiconductor laser elements were produced in the same way as in Example 1 except that an undoped Al 0.3 Ga 0.7 As layer (refractive index: 3.40) was used as the burying layer. At 20 °C, the threshold current was 20 mA and the driving current at 30 mW was 80 mA, and at 80°C, the threshold current was 40 mA, and the driving current at 30 mW was 150 mA. The internal differential quantum efficiency (ηi) and the cavity loss (αi) were 90% and 9 cm -1 , respectively. Comparative Example 2 A ridge stripe was formed in the same way as in Example 1. Then, an undoped Al 0.6 Ga 0.4 As layer 5 was formed in the etched out portion by the MOCVD method without using HCl. Since polycrystalline was deposited on the mask during the operation, a semiconductor laser element could not be obtained.

Claims: A semiconductor laser element comprising a first cladding layer, an optical guiding layer, an active layer and a second cladding layer disposed in this order, or in reverse order on a semiconductor substrate, wherein (a) the refractive index of the active layer is larger than both refractive indexes of the first and second cladding layers, and (b) the refractive index of the optical guiding layer is smaller than that of the active layer but larger than that of the first cladding layer; which element also comprises a burying layer having a refractive index smaller than that of at least one of the first and second cladding layers, said burying layer being disposed on side faces other than the laser-emitting faces of the optical guiding layer and the active layer, and said burying layer being flush with the surface, or extending into a part of the cladding layer closer to the semiconductor substrate. An element according to claim 1 wherein the semiconductors used for the first cladding layer, the optical guiding layer, the active layer and the second cladding layer are AlGaAs-based semiconductors. An element according to claim 1 wherein the semiconductors used for the first cladding layer, the optical guiding layer, the active layer and the second cladding layer are AlGaInP-based semiconductors. An element according to claim 2 wherein the semiconductor substrate is composed of n-GaAs, the first cladding layer is composed of n-Al x Ga 1-x As, 0.2< x < 0.7, the optical guiding layer is composed of n-Al y Ga 1-y As, 0.1 < y < 0.5, the active layer is composed of Al w Ga 1-w As, 0 ≤ w < 0.3, the second cladding layer is composed of p-Al v Ga 1-v As 0.2 < v < 0.8, and the burying layer is composed of Al u Ga 1-u As, 0.2 < u < 1.0. An element according to claim 1 wherein the semiconductor substrate is composed of n-GaAs, the first cladding layer is composed of n-Al x Ga 1-x As, 0.2 < x < 0.7, the optical guiding layer is composed of n-Al y Ga 1-y As, 0.1 < y < 0.5, the active layer is composed of GaInP, the second cladding layer is composed of p-Al v Ga 1-v As, 0.2 < v < 0.8, and the burying layer is composed of Al u Ga 1-u As 0.2 < u < 1.0. An element according to claim 3 wherein the semiconductor substrate is composed of n-GaAs, the first cladding layer is composed of n-Al x Ga 1-x InP, 0.2 < x < 0.7, the optical guiding layer is composed of n-Al y Ga 1-y InP, 0.1 < y < 0.5, the active layer is composed of GaInP, the second cladding layer is composed of p-Al v Gal 1-v InP, 0.2 < v < 0.8, and the burying layer is composed of Al u Ga 1-u InP, 0.2 < u < 1.0. An element according to any one of claims 4 to 6 wherein w < y < x, and y < v; and x < u or v < u. An element according to any one of the preceding claims wherein the refractive index of the burying layer is smaller than that of the first cladding layer. An element according to any one of the preceding claims wherein the thickness of the active layer is 0.02 to 0.2 µm, the thickness of the optical guiding layer is 0.03 to 1.0 µm, and the thicknesses of the cladding layers are each independently 0.2 to 3.0 µm. A process for producing an element as defined in any one of the preceding claims which comprises laminating the first cladding layer, the optical guiding layer, the active layer and the second cladding layer in this order or in reverse order on the semiconductor substrate, providing a mask on the laminated layers, carrying out etching until the surface of the cladding layer closer to the semiconductor substrate is based out or until a part of the cladding layer closer to the semiconductor substrate is etched, and forming the burying layer in the etched out portion, wherein a small amount of an etching gas is flowed together with the layer-forming material gas continuously or intermittently during the forming of the burying layer. A semiconductor laser comprising an element as defined in any one of claims 1 to 9.

Inventors: GOTO HIDEKI, INOU YUICHI, SAKAMOTO ITARU, SHIMOYAMA KENJI, GOTO, HIDEKI, INOU, YUICHI, SAKAMOTO, ITARU, SHIMOYAMA, KENJI
Applicants: MITSUBISHI CHEM CORP, MITSUBISHI CHEMICAL CORPORATION
Application year: 1993
Main classification: H01S3
IPC codes: H01S5, H01S3