A METHOD AND A DEVICE FOR CHECKING THE CONDITION OF SEMICONDUCTOR VALVES

Abstract: An electric semiconductor valve (V), for example a valve in a converter for conversion between alternating current and high-voltage direct current, comprises a plurality of semiconductor positions (TS1, TS2, ... TSN) with mutually series-connected semiconductor devices (T1, T2, ... TN). With the semiconductor valve energized by an alternating voltage substantially corresponding to the rated voltage thereof, the condition of an optional semiconductor position is checked by generating a test firing signal (FP) and supplying it to the firing channel (L, 1, TCU, 3) of the semiconductor position alone, whereupon an indicating signal (IP) delivered by the indicating channel (TCU, 2, D) of the semiconductor position is studied with respect to time.

Description: A method and a device for checking the condition of semicon¬ ductor valves TECHNICAL FIELD The present invention relates to a method for checking the condition of an optional semiconductor position included in an electric semiconductor valve, for example a valve in a converter for conversion between alternating current and high-voltage direct current, which semiconductor valve com¬ prises a plurality of semiconductor positions with mutually series-connected semiconductor devices, and to a device for carrying out the method. The device comprises signal-generating members for genera¬ ting and applying to the firing channel of the semiconductor position alone a test firing signal, a sensing member for timely studying an indicating signal delivered by the indi¬ cating channel of the checked semiconductor position, and an evaluation member for determining and indicating the result of the study. The term "semiconductor position" in this application means a component group comprising a controllable semiconductor device, such as, for example, a thyristor or a gate turn-off thyriεtor (GTO thyristor) , resistors and capacitors, arranged in a conventional manner at the semiconductor device, for voltage protection of the semiconductor device and for voltage division with other semiconductor positions included in the valve, a firing channel for receiving and transmitting firing signals for the semiconductor device, an indicating unit for generating an indicating signal when the voltage across the semiconductor device in its forward direction exceeds a predetermined value, and an indicating channel for delivering the indicating signal. The term "semiconductor valve", or just "valve", in this application means a sec of a plurality of semiconductor positions with mutually series-connected semiconductor devices, which during normal operation electrically function as a unit. The firing and indicating channels may comprise, in a manner known per se, light guides for non-galvanic signal trans¬ mission between different potential levels and may then at their end points comprise members for conversion between electric signals and light signals. The semiconductor device may be electrically fired or directly light-fired. In the former case, circuits designed in a manner known per se for conversion of a firing signal received in the form of a light signal into an electric signal, adapted to be supplied to the gate of the semicon¬ ductor device, may be associated with the indicating unit. In the latter case, the received firing signal may be directly applied to the semiconductor device, via the firing channel, in the form of a light signal. The indicating signal may be of a short, type, which means that a short pulse is delivered when the voltage across the semiconductor device passes the predetermined value in an increasing direction, or of a long type, which means that an indicating signal is delivered as long as the voltage exceeds the pre- determined value. Long indicating signals may consist of a continuous signal or be in the form of a pulse train. BACKGROUND ART An electric valve, for example included in a converter for conversion between alternating current and high-voltage direct current (HVDC converter) , comprises a usually large number of mutually series-connected semiconductor devices in the form of thyristors. A control system, located at ground potential, for the converter generates a firing order for the valve and a control system for the valve, also located at ground potential, generates as a result of the received firing order a firing signal for each one of the thyristors included in the valve. These firing signals are received by a firing channel which is associated with each thyristor and which transmits the firing signal to an electronic unit associated with each thyristor. The electronic unit, which is at the potential of the thyristor, comprises, in the case with electrically fired semiconductor devices, circuits for converting a firing signal received as a light signal into an electric firing pulse which is applied to the gate of the thyristor, as well as an indicating unit. Where the thyris- tors are of a directly light-fired type, the electronic unit consists of an indicating unit only, which is then not connected to the gate of the respective thyristor. The indi¬ cating signal generated by the indicating unit is trans¬ mitted via an indicating channel to ground potential and is used to ensure, in a manner known per se, that the gate of a thyristor is not supplied with a firing pulse unless its off-state voltage in the forward direction has attained a predetermined value, adapted for a rapid and safe firing, as well as to indicate, by its occurrence, that the respective thyristor is not short-circuited. For the latter purpose, the indicating signal is supplied to a monitoring device for the valve or the converter, whereby the occurrence of an indicating signal also means a confirmation that the respec¬ tive indicating channel is in operation. The absence of indicating signals for a semiconductor position is recorded in the monitoring device or in some storage medium connected thereto. Both the firing and the indicating channels are usually made as optical fibre links and are provided at their end points with members for conversion between elec- trie and optical signals. Further, the electronic unit comprises circuits, arranged in a manner known per se, for achieving a voltage-controlled firing of the thyristor in the event that firing in the intended manner by a firing pulse emanating from a firing signal generated by the control system fails to occur. The voltage-controlled firing is initiated when the off-state voltage of the thyristor m the forward direction exceeds a certain level. For a general description of the technical background within the technical field mentioned, reference is made to Ake Ekstrom: High Power Electronics HVDC and SVC, EKC - Electric Power Research Center, The Royal Institute of Technology, Stockholm, 1990. With the valve m the off-state, each thyristor takes up part of the voltage across the valve whereby the voltage division between the individual thyristors is determined by a voltage divider , comprising resistors and capacitors, connected m parallel with the thyristors. The valve is usually so dimensioned that in the event that one or a few individual thyristors, for example because of an internal short circuit, should have no voltage-absorbing ability, the remaining thyristors during operation under normal voltage conditions are still able to block voltages occurring across the valve. However, a monitoring of the operat i on of t-hp thyristors included in the valve ι_=, still necessary such that faulty units can be replaced during planned maintenance work. According to the p ior art, the monitoring is carried out m the manner described above by observing the mdica- ting signals transmitted to the monitoring device, whereby the absence of an indicating signal, indicating a fault such as a short circuit m the respective thyristor or a fault m the indicating channel, is recorded together with an indica¬ tion as to which semiconductor position has been found to lack indicating signal However, commonly known systems for the above-mentioned monitoring does not provide any information as to whether the thyristor has been fired m the intended manner by supplying to the gate cf the thyristor a firing pulse emanating from a firing signal generated by the control system, or, m the absence of such a firing pulse, by voltage-controlled firing. Thus, a fault m the firing channel for a thyristor cannot be discovered m this way. SUMMARY OF THE INVENTION It is an object of the invention to achieve an improved checking of the condition of an optional semiconductor position and thereby particularly to make it possible to check whether its firing takes place by a firing pulse emanating from a firing signal generated by the control system, or by voltage-controlled firing. According to the invention, this is achieved, with the semi¬ conductor valve energized by an alternating voltage substan- tially corresponding to the rated voltage thereof, by gene¬ rating a test firing signal by means of a signal-generating member and applying this signal to the firing channel of the semiconductor position alone at a time when the forward voltage across its semiconductor device is positive, whereupon an indicating εiσnal delivered by the indicating channel of the semiconductor position is studied with respect to time by means of a sensing member, and, in dependence on the result or this study, it is determined by means of an evaluating member whether the function of the semiconductor position is correct Advantageous improvements of the invention will be clear from the following description and the appended claims. BRIEF DESCRIPTION OF THE DRAWINGS The invention will be explained m greater detail by describing embodiments witn reference to the accompanying drawings, wherein Figure 1A shows m the form of a block diagram a known device for monitormy o semiconductor positions in an HVDC converter , Figures IB-ID show embodiments of certain blocks shown in Figure 1A, Figure IE shows a schematic equivalence circuit for a thyristor witn associated RC circuits, Figure 2 shows in the form of a block diagram an embodiment of the invention, Figure 3 shows variations of thyristor voltage as well as firing pulses and indicating signals in one embodiment of the invention, Figure 4 shows variations of thyristor voltage as well as firing pulses and indicating signals in another embodiment of the invention, Figure 5A shows in the form or a block diagram an embodiment of a device for checking the condition according to the invention, Figure 5B schematically shows a 6-pulse valve bridge included m an HVDC converter, and Figure 5C shows m the form of a block diagram another embodiment of a device for checking the condition according to the invention DESCRIPTION OF THE PREFERRED EMBODIMENTS The following description relates to the method as well as to the device Figure 1 shows part of a valve V m an HVDC converter. The valve comprises N mutually serιe c -connected thyristors Tl, T2 , ... TN with electric firing, of which only three are shown in the figure Associated with eacn thyristor is an electronic unit TCU, which ι c tnj_> placed at a high poten- tial. In the figure, a dash-dotted line marks a dividing line such that parts shown to the right of this line are at high potential and parts located to the left of this line are at ground potential. Associated v/ith each electronic unit is a light-pulse generator L, connected to the respec¬ tive electronic unit by means of a first light guide 1, and a receiving detector D, connected to the respective elec¬ tronic unit by means of a second light guide 2. The light- pulse generators can all be activated simultaneously by a firing signal CP, generated by a valve control system VCU, which in turn is activated by a firing order VFO for the valve, generated by a control system (not shown) for the converter. When a light-pulse generator is activated, a firing signal FP'l, FP'2, ...FP'N is sent therefrom to the electronic unit of the respective thyristor, m which the firing signal is converted into an electric signal which via a conductor 3 is applied to the gate of the thyristor to cause the thyristor to carry current. Each one of the elec¬ tronic units also comprises an indicating unit of the pre- viously mentioned kind and from these indicating units indi¬ cating signals IP'l, IP' 2, ... IP'N m the form of light signals are emitted via the light guides 2 to the respective receiving detector D, m which the received light signal is converted into a corresponding electric signal. Figure IB shows an embodiment of a light-pulse generator L, comprising a light-emitting diode 4, Figure 1C shows an embodiment of a detector D comprising a light-sensitive diode 5, and Figure ID shows an embodiment of an indicating unit 6, comprising a resistive voltage divider 61, 62 which, by means of conductors 63 , 64, i primarily connected over the thyristor and secondarily to the input of a level- sensing member 65, an oscillator 66, which is activated by the level-sensing member, an amplifying member 6 , which receives the output signal of the oscillator and, after adaptation of the signal level, applies its output signal to a light-emitting diode 58. The oscillator 66 generates a pulse train where the pulses ma\ , for example, have a duration of 1 με and the gap between two consecutive pulses have a length of, for example, 5 μs . Each one of the light-pulse generators L with the associated first light guide 1, the circuits arranged in the respective electronic unit for conversion of the firing signal into an electric signal, and the guide 3 between the outputs of these circuits and the gate of the thyristor thus form a firing channel. Each one of the indicating units including their conductors 62, 63 for connection across the thyristor as well as the associated second light guide 2 and detector D form an indicating channel. A firing channel, the associated thyristor with resistors and capacitors for voltage protection of the semiconductor device and for voltage division with other semiconductor devices as well as the associated indicating channel form a semiconductor position TS . In a manner known per se, bu 1 " not shown here, the output signals from the detectors D ar e used to ensure that firing does not take place until a sufficient voltage across the thyristor has been achieved. The indicating signals arriving are a so each supplied to a respective bistable flip-flop BV, monitored by a microprocessor common to these flip- flops. At the beginning of each positive half-period for the alternating voltage applied across the valve, there is thus obtained an indicating signal IP from each indicating unit, except from those which are connected to a short-circuited thyristor or where there is no bianal because of a fault m the indicating channel - there is no possibility of distin¬ guishing these cases from each otner . Nor is it possible to determine, m those cases where an indicating signal is delivered, whether the firing takes place because of a firing signal emanating fror tne control system of the valve or by voltage-controlled firing. To accomplish a more complete possibility of carrying out a check of the condition of an individual semiconductor posi¬ tion, it is foreseen according to the invention that an emission of individual firing signals is made possible in such a way tnat a special test firing signal can oe emitted to a single one of the semiconductor positions whereas the other ones do not receive such a test firing signal. An example of such a possibility is shown m Figure 2, where a device 7 for checking the condition according to the invention is shown. The device 7 comprises a signal-gene¬ rating member 71 for generating and applying to the firing channel of an optional semiconductor position TS1, TΞ2 , ... TSN alone a test firing signal FPi, FP2 , ... FPN, a sensing member 72 for timely studying an indicating signal IPl, IP2 , ... IPN delivered by the indicating channel of the checked semiconductor position, and an evaluation member 73 for determining and indicating the result of the study. Asso¬ ciated with each semiconductoi position is a signal-selector gate FPG the output of which ι_. connected to the light- pulse generator of the position and one input of which receives the firing signal CP, generated by the valve con¬ trol system VCU, and the ether input of which receives one of the individual test firing signals FPI, FP2 , ... FPN generated by the signal-geneiatmg member. The test firing signals are each transmitted to the signal selector gates via a respective conductor 8. The light-pulse generators can thus receive firing signals emanating both from the control system of the valve and from the device 7 for checking the condition. The indicating signals IPl, IP2 , ... IPN deli¬ vered by the detectors D a e each supplied to the sensing member 72 included m the device ~ via a respective conduc¬ tor 9. In an embodiment according tc t e invention, which is suitably carried out when αiuer a-nig voltage is applied to the valve, preferably substantially corresponding to the rated voltage of the valve, but when otherwise the valve is not in operation, the various semiconductor positions are tested one-by-one by sending thereto, by means of the signal-generating member, a test firing signal from the device 7 via the conductors 8 and the signal selector gates FPG. This is carried out at a time when forward voltage is applied to the thyristors, and preferably close to a angle of 90° for the alternating voltage. To reduce the voltage stresses on the thyristors, the angle is suitably chosen larger than 90°. During the testing, none of the energized semiconductor positions receives firing signals CP emanating from the valve control system VCU Thereafter, the time of the arrival of the following indi¬ cating signals for the other semiconductor positions is studied and compared with the indicating signal which arrives from the semiconductor position which has received a test firing signal. When the condition is correct, the indi¬ cating signal of the tested semiconductor position shall then be delayed m relation to the other ones. If this is not the case, there is a fault - no firing has taken place by means of the test firing __ιgnd If it is known, for example by a monitoring during operation according to the technique described with reference to Figure 1A, that normal indicating signals arrive from the tested semiconductor position under normal ooeratinα conditions, and that thus the thyristor itself is functioning, the conclusion can be drawn that the thyristor m this unit is regularly fired by means of voltage-controlled firing. A fault is thus present in the firing channel of the semiconductor position and should suitably be corrected It is suitable also to carry out a further testing m such a way that the power of the light signals for firing under the same circumstances is reduced, for example by 30-50%. In the same way it is determined if, a c if should, a delayed indi¬ cating signal is obtained If thi- ι c not the case, the safety factor for the firing channel is insufficient, either m the electronic unit or n the liσht-pulse generator L. Figure 5A shows m more detail the embodiment of the device for checking the condition of a valve V. The checking device comprises a demultiplexer 712 and a multiplexor 721, with a number of outputs and inputs, espectively, which correspond to the number of semiconductor positions m the valve, whereby each semiconductor position is associated with an output on the demultiplexer and an input on the multiplexor. Each one of the outputs of the demultiplexer is connected, via a respective conductor 8, to a signal selector gate FPG and each one of the inputs of the multiplexor receives, via conductors 9, indicating signals from the respective semi¬ conductor position, as described with reference to Figure 2. A microcomputer 74 transmits via a signal bus 75, m a manner known per se, address information relating to a semi- conductor position the valve ana influences the demulti¬ plexer and the multiplexor such that the indicating signal IP for the addressed semiconductor position appears on the output of the multiplexor and such that a signal FPS on the input of the demultiplexer is supplied via its output to the signal selector gate which is connected to the firing channel of the addressed position When a test firing signal is to be emitted, the input of a monostable flip-flop 771 is activated by means of the microcomputer, which flip-flop, when a signal is supplied to the input thereof, delivers a signal m the form of a short pulse FPS, ror example of the duration 1 μs, which is supplied to the input of the demul¬ tiplexer and is forwarded therefrorr as a test firing signal for the addressed semiconductor position The signal FPS is also supplied to the S-mputs or a bistable flip-flop 772 and of a bistable flip-flop 773, the inverted Q-outputs of these flip-flops then assuming the value "0". The indicating signals IPl, IP2, ... IPN from the semiconductor positions of the valve are supplied to an OF circuit the output of which is connected to the of the bistable flip-flop 773. When at least one of tne aoove-mentioned indicating signals is delivered by tne respective indicating channel, the output of the OF circuit and hence also the inverted Q- output of the bistable flip-flop 77 ' assume the value "1". The inverted Q-output is connected to a monostable flip-flop 774 which, when a signal is supplied to the input thereof, delivers a signal m the form of a short pulse IPP, which is supplied to a first input of an AND circuit 775. The indica- ting signal IP from the addressed semiconductor position appears on the output of the multiplexor and is supplied to a second input of the AND circuit. In the event that the indicating signal IP of the addressed semiconductor position is delivered during the time during which the first input of the AND circuit receives a "1" signal, the AND circuit delivers a "1" signal to the R-input of the bistable flip- flop 772 and sets the inverted Q-output thereof at the value "1". This signal constitutes a fault signal VCF, which is supplied to the microcomputer . In the event that the indicating signal IP of the addressed semiconductor position relation to the indicating signals from the other semiconductor positions is delivered delayed by a time exceeding the length of the pulse IPP, the output of the AND circuit remains "0" and the inverted Q-output of the bistable flip-flop does not deliver any fault signal. By a suitable choice of the lengtn of the pulse IPP, it can be concluded from the occurrence of the fault signal VCF that firing of the semiconductor device in the addressed semiconductor position nas not taken place by means of the test firing signal FP but that firing during normal opera¬ tion takes place by voltage-controlled firing. An advan¬ tageous choice of tne length of the pulse IPP is, for example, 1 ms . The fault signal VCF and information about the address of the corresponding semiconductor position are recorded a manner known per se the microcomputer for storage and retrieval of information about the defective semiconductor position. An explanation why the invention according to this embodi¬ ment is able to function resides how resistors and capa¬ citors for voltage protection of the semiconductor device and for voltage division cooperate with the respective thyristor. It would go too far to go into all the details of these very complicated circuits, but to acquaint oneself with the invention it is sufficient to refer to the schema¬ tic Figure IE. Parallel to the series-connected thyristors in a valve, a voltage divider is arranged which comprises voltage divider resistors Rl connected m parallel across each thyristor. Further, a series circuit is arranged parallel to each thyristor , which series circuit comprises a capacitor C2 connected series with a resistor R2. Typical values of the components included are Pi = 40 kohms, C2 = 3 microfarads, and R2 = 40 ohms. In Figure 3 the upper curve shows the voltage UT across a single one of the thyristors as α function of time in case no firing takes place. Each time the voltage in the forward voltage direction exceeds a threshold value, which may be 30-100 V, an indicating signal is delivered, here designated 10. The lower curve m Figure J shows the voltage across one single thyristor case this is fired at the time T. Across the thyristor there is then applied a voltage which depends on the time of firing and which immediately drops to zero by the thyristor becoming conducting at the time of firing, whereby the capacitor C2 is discharged through the thyristor while at the same time the thyristor short-circuits the resistor Rl . At a certain time E the current through the thyristor becomes so low that the thyristor stops conduc¬ ting. The voltage across the thy istor and hence across the other components shown m Figure IE is then essentially zero. The voltage then drops, as snovn in Figure 3, and then again rises with the alternating voltage but lags behind, so to speak, in relation to the voltage across the other thyristors in the valve. Therefor-, the indicating signal at the time 11 according to Figure 3 will be delayed m rela¬ tion to the time 10 for the others, which have not had their capacitors C2 discharged. After a few periods of the alter¬ nating voltage, also the capacitor C2 of the tested semicon- ductor position will nave recovered. The delay will thus remain, which does not prevent testing other semiconductor positions before full recovery has been made, provided that the fact that the indicating signals of newly tested semi¬ conductor positions are not representative is taken into consideration. The above explanation is relatively lucid and the intention is not that it should be a limiting factor for the invention, which is based on the observation of the actual delay between indicating signals at the time 10 and the time 11, when only tne thyristor of one semiconductor position has been made conducting. In another embodiment according to the invention, which is suitably carried out when the valve is m normal operation and the indicating units generate indicating signals of a long type, the various positions are tested one-by-one by sending thereto a test firing signal from the signal-generating member 71 via the conductors 8 and the signal selector gates FPG in the way described with reference to the preceding embodiment. This is carried out at a time when forward voltage is applied to the respective thyristor but before the time when the semiconductor posi¬ tion receives a firing signal CP from the valve control system VCU which is operation. During the testing, only one semiconductor position at a time receives a test firing signal. Thereafter, the time when the indicating signal from the tested semiconductor position disappears is studied and compared with the time for emission of the test firing signal. In case of correct condition, the indicating signal of the tested semiconductor position shall then disappear after a delay Δτ mιn corresponding to the sum of the time lags tne firing and indicating channels as well as the changeover time of the thyristor from off-state to on-state. If this is not the case but an additional delay can be observed before the indicating signal disappears, the con¬ clusion can be drawn that the thyristor fires in a voltage- controlled manne . A fault is thus present in the firing channel of the semiconductor position and should be correc¬ ted in a suitable way. The method is illustrated Figure 4, which for two semiconductor positions TSl and TSN m a valve shows the voltages UTl and UTN across the respective thyristor as a function of time, as well as the positions m time for the firing signals FP(1) and FP(N) and the indicating signals IPl and IPN of the respective semiconductor positions. The firing signals FP(1) , FP(N) may emanate from the valve control system or from the checking device. Firing signals emanating from the control system of the valve which is in normal operation are designated FPCP and the test firing signals which are emitted from the checking device are designated FPJ and FPN, respectively . The figure illustrates the fact that the semiconductor position TSl operates correctly whereas the semiconductor position TSN does not operate correctly. When the respective thyristor is fired in case of positive forward voltεige, the voltage across the thyristor breaks down into a value near zero whereby the corresponding indicating signal disappears. The thyristor Tl is fired, when its condition is not checked according to the invention, by means of firing signals, emanating from the control system of the valve and its indicating signal IPl disappears, when a firing signal has been applied, after the above-mentioned delay ΔT mιn . For the thyristor Tl this also applies to the case where the applied firing signal consists of the test firing signal FPl . The thyristor T2 is fired by voltage-controlled firing by means of firing signals, which are initiated by the above-mentioned circuits for voltage- controlled firing which are included in the electronic unit and which are later m time tnan tne firing signals FPCP. The positions with respect to time for the voltage- 1G controlled firing are designated VCT the figure. Nor does the test firing signal FPN achieve firing of the thyristor TN so the forward voltage across this thyristor remains until the voltage-controlled firing occurs. This fact mani- fests itself by the indicating signal IPN disappearing only after a time DT > ΔT mιn after the emission of the test firing signal FPN. Figures 5B and 5C illustrate an embodiment of the device 7 for checking the condition, which is advantageous when the semiconductor valve is included a converter in a bridge connection. Figure 5B shows a converter a three-phase 6- pulse bridge connection comprising six valves VI, V2, ... V6. The bridge is connected, in ^ manner known per se, between a three-phase a.c. network, m the figure only designated R, S, T, and a d.c. network, m the figure only denoted by two conductors 10, 11. In a manner described with reference to Figure 2, each one of the valves receives a firing signal (CP(1) , CP(2) , ... CP(6) which is common to the respective valve and ι c generated by a valve control system associated with the valve. A firing order VFO is generated m a manner known per se by α control system for the converter such that the valve- a e cyclically supplied with a firing order VFO the sequence VI, V2 , ... V6 , VI ... . Each one of the valve comprise.. N semiconductor posi¬ tions which, as described with reference to Figure 2, via signal selector gates FPG, can i eceive the firing signal CP, which is common to the vαlvc, a- well as individual test firing signals FP. Each one of the semiconductor positions delivers an indicating signal IP of a long type via an indi¬ cating channel . Figure 5C shows more detail the embodiment of the device for checking the condition of the valve VI. The checking device comprises a demultiplexor ^i- and a multiplexor 721, with a number of outputs and inputs, respectively, which correspond to the number of semiconductor positions m the valve, whereby each seniconαuc . po ition is associated with an output on the demultiplexer and an input on the multiplexor. Each one of the outputs of the demultiplexer is connected, via a respective conductor 8, to a signal selec¬ tor gate FPG and each one of the inputs of the multiplexor receives, via conductors 9, indicating signals from the respective semiconductor position, as described with reference to Figure 2. A bistable flip-flop 711 is supplied on its S-mput with the firing signal CP(6) , for the valve V6, which lies before the valve VI in the commutatmg sequence, and on its R-input with the firing signal CP(1) for the valve VI. The signal CP (6) sets the Q-output of the bistable flip-flop, the output signαi of which is designated TO, at "1", which activates a counter 74. When the valve Vl takes up off-state voltage m the forward direction, mdica- ting signals the form of pulse trains are received, as described above with reference to Figure ID. The counter 74 transmits via a signal bus 75, m a manner known per se, address information relating to α semiconductor position in the valve and influences the demultiplexer and the multi- plexor such that the mdicatini siσnαl IP for the addressed semiconductor position appears on tne output of the multi¬ plexor and such that a signal FPS on the input of the demul¬ tiplexer is supplied via its output to the signal selector gate which is connected to the firing channel of the addressed position A monostable f it -flop 722 which, when a signal is supplied to its input , on i - output delivers a pulse the pulse length of which exceed^ the gap between two consecutive pulses in the indicating signal, m this case for example 10 μs, converts trie indicating signal into a continuous indicating signal IPC The continuous indicating signal ICP is supplied to a monostable flip-flop 723 which, when a signal is supplied to its input, delivers a short pulse FPT, for example of α length of 1 μs, to the input of an AND gate 713. This takes piac- 'Te the indicating signal IP and hence the continuous sign...- I - C appear. Tne second input of the AND gate ι c c upplιed with the signal TO from the Q-output of the bistable flip-flop 711, and since this has already assumed a ' 1' state, -> signal FPS is generated on the output of the AND gate 713 when the indicating signal IP appears, which signal FPS is supplied to the input of the demultiplexer and is forwarded therefrom as a test firing signal for the addressed semiconductor position. The signal FPS is also supplied to a time-lag circuit 724, the output of which reproduces the input signal with a delay tl when a signal is supplied to the input thereof and a delay t2 when the signal disappears. The output signal TW from the time- lag circuit and the output signal from the flip-flop 722 are supplied to an AND gate 73, whereby the signal TW can be said to provide a time window for study of the indicating signal IPC converted into continuous state. In case the indicating signal IPC is still present within this time window, the AND gate 73 delivers on its output a fault signal VCF. By a suitable choice or this time window, that is, of the delay tl and the delay t2 for the time-lag circuit 724, the conclusion can be drawn from the occurrence of the fault signal VCF that firing of the semiconductor device the addressed semiconductor position has not taken place by means of the test firing signal FP but that firing has taken place by voltage-controlled firing. An advan¬ tageous choice of the times tl and t2 can, m this example, be tl = 20 μs and t2 = 30 μs. The fault signal VCF and information about the address of the corresponding semiconductoi position are supplied to a recording device M of a kind known per se, for example a memory associated with a microcomputer, for storage and retrieval of information about tne defective semiconductor position. Recordation of information as to which semicon¬ ductor position has been found to have a faulty condition is carried out m a manner known per se, and schematically indicated m Figure 5C, by supplying address information from the signal bus 75 via an AIII gate 731 to the recording device M when tne fault signal VCF ι r present. When the firing signal CP(1^ for the tested valve VI, gene¬ rated by the valve control c ysteπ, is supplied to the R- input of the bistable first flip-flop 711, the output signal TO from the Q-output thereof assumes the value "0", which deactivates the counter 72 and blocks the first AND gate 713. Before the next firing of the valve VI, the output signal TO on the Q-output of the bistable first flip-flop 711 is again set at "1" by the firing signal CP(6) for the valve V6 , whereby the counter 72 steps one step to influence the demultiplexor and the multiplexor via the bus 75 such that the signals FPS on the input of the demultiplexor and IP on the output of the multiplexor, respectively, are connected to the semiconductor position the valve which is next to be checked, for example a valve directly series- connected to the valve of the preceding check. Semiconductor positions, the semiconductor devices of which are perma- nently short-circuited or the indicating channels of which are defective, do not deliver any indicating signal and will not therefore, when addressed by the checking device, be supplied with any test firing signal. Checking devices corresponding to the one described with reference to Figure 5C are arranged for each of the valves, the S-input of the first flip-flop 711 being supplied with the valve firing signal CP(n-l) and the R-input of the flip- flop being supplied with the valve firing signal CP(n) , where index n refers to the valve which is to be checked and index n-1 refers to the valve which immediately precedes the former valve the commutatmg sequence. The recording device M can, of course, be common to one or more valves and/or converters and furthermore be adapted to record, in addition to an address identification for the semiconductor position, also an identification of the respective valve and/or converter . The device shown m Figure 5C can also be used for a valve which is not part of a bridge connection. In that case, the S-input of the bistable first flip-flop 711, instead of being supplied with the firing signal CP(6) , as is the case with the bridge connection, is supplied with a signal CALFA for setting the Q-mput of the flip-flop at "1". This is marked m Figure 5C by CALFA within parenthesis at the S- input of the flip-flop 711. In this case it is advantageous to supply the signal CALFA at an electrical angle which, counting from the rising zero crossmg of the alternating voltage, is smaller than the minimum control angle of the semiconductor valve during normal operation, for example 10°. The checking devices shown may m applicable parts, wholly or partially, consist of, for example, a microcomputer, programmed according to the principles which are clear from the above description, or of hard-wired circuits provided for the particular purpose. As long as the firing via the firing channel is operating, the system has a redundancy such that drop-out of a firing channel permits a protective function v/ith voltage- controlled firing to take over . If the firing via the firing channel drops out, this redundancy is no longer present. If both of the mentioned methods for firing drop out, the thyristor will break down and become permanently short- circuited. By the invention it is possible t carry out an automatic check of all of the semiconductor positions included in the valve. It is often a question of very large plants with a large number of positions. In each valve the number of thyristors may be up to 250, and m a 12-pulse system the number of units to be tested can thereby amount to the order of magnitude of 3,000 units. The alternative of carrying out a manual measurement check of all the positions, which would otherwise be necessary, is therefore a very extensive opera¬ tion, which can be essentially eliminated by the invention. Only those positions which nave b en diagnosed according to the invention thus need to be overhauled manually, usually for replacing the entire electronic unit for a semiconductor position. The invention has been exemplified by a valve where the actual semiconductor devices consist of thyristors with electric firing. It is to be foreseen that the development of directly light-fired thyristors and of gate turn-off thyristors, so-called GTO thyristors, will be such that also thyristors of these kinds will be used in corresponding applications, and it should therefore be pointed out that the invention can also be applied to checking of the con¬ dition of semiconductor positions comprising these types of semiconductor devices. The invention can, of course, be applied also to semicon¬ ductor valves intended for other purposes than conversion between alternating current, and direct current.

Claims: CLAIMS 1. A method for checking the condition of an optional semiconductor position (TSl, TS2, ... TSN) included in an electric semiconductor valve (V) , for example a valve in a converter for conversion between alternating current and high-voltage direct current, said semiconductor valve comprising a plurality of semiconductor positions with mutually series-connected semiconductor devices (Tl, T2, ... TN) , characterized m that with the semiconductor valve energized by an alternating voltage substantially corre¬ sponding to the rated voltage thereof, a test firing signal (FP) is generated and supplied to the firing channel (L, 1, TCU, 3) of the semiconductor position alone at a time when the forward voltage across the semiconductor device of the semiconductor position is positive, whereupon an indicating signal (IP) supplied by the indicating channel (TCU, 2, D) of the semiconductor position is studied with respect to time and, in dependence on the result of this study, it is determined whether the condition of the semiconductor position is correct. 2. A method according to claim 1, characterized in that the indicating signal supplied by the indicating channel of the semiconductor position is, studied with respect to time in relation to either the test firing signal or to indica¬ ting signals (IPl, IP2, ... IPN 1 from the other semiconduc¬ tor positions included m the semiconductor valve. 3. A method according to claim L, characterized in that it comprises checking that that indicating signal, supplied by the indicating channel of the semiconductor position, which immediately succeeds the supplied test firing signal, is delayed in relation to indicating signals from the other semiconductor positions included in the semiconductor vaive, whereby a failing delay indicates an incorrect condition of the checked semiconductor position. 4. A method according to claim 3, characterized in that the test firing signal is supplied at an electrical angle greater than 90°, counting from the rising zero crossing of the alternating voltage. 5. A method according to claim 2, under which the firing channel of the semiconductor position is supplied with firing signals (CP) generated by a valve control system (VCU) adapted for control of the semiconductor valve during normal operation, characterized m that the test firing signal is supplied to the firing channel at a time which is earlier than the firing signal supplied by the valve control system during the same period of the alternating voltage, and that it comprises checking that the time for disappear- ance of the indicating signal supplied by the indicating channel of the semiconductor position is not delayed in relation to the time of application of the test firing signal, whereby a delay exceeding a given time indicates a faulty condition of the checked semiconductor position. 6. A method according to claim 5, characterized in that it comprises checking whether the indicating signal is present during a time interval which begins after a given first time after, the application of the test firing signal and ends at a given second time thereafter . 7. A method according to claim 5 oi 6, characterized in that the test firing signal is . upplied at an electrical angle smaller than the minimum control angle of the semi- conductor valve, counting from the rising zero crossing of the alternating voltage. 8. A method according to claim 5 or 6, characterized that the test firing signal is suppli d when an indicating signal is delivered by the indicating cnannel of the checked semiconductor position. 9. A method according to am of claims 5-6 and 8, wherein the semiconductor valve (VI, V2 , ... V6) is included in a converter a bridge connection, characterized that the test firing signal is supplied to semiconductor posi- tions which ar selected m dependence on firing signals (CP(1), CP(2), ... CP(6)) generated by the valve control system of the conver er for control of the semiconductor valve during normal operation 10. A method according to any of the preceding claims, characterized that the test firing signal is supplied only when an indicating signal has been delivered by the indicating channel of the checked semiconductor position. 11. A method according to any of tne preceding claims, characterized m that the test tiring signal is supplied with reduced power . 12. A device for checking the condition of an optional semiconductor position (TS_, TSl, . TSN) included an electric semiconductor vai^- ( ' τ X foi example a valve m a converter for conversion between alternating current and high-voltage direct current, -.αiu semiconductor valve comprising a plurality of semiconductor positions with mutually series-connected ser.icoi.αjctυi devices (Tl, T2, ... TN) , characterized in that i" em ises a signal- generatmg member (71^ tor generation and supplying to the firing channel !L, 1, TCU, J' of t'.e semiconductor position alone a test firing signal (FT > , c. sensing member (72) for timely studying an indicating -ιgna_ (IP) delivered by the indicating channel (TCU, 2, D of t cnecked semiconductor position, and an evaluation errbe. ) for determining and indicating the result o: sc.ιc - z ~ ' ■ _ 13. A device according t _. --_aι r ___ , characterized m that the sensing member is aαapteu t._ timely study the indicating signal delivered by the mcicαtir. ι cnannel of the checked semiconductor position relatic.. to either the test firing signal or to indicating signals (IPl,IP2, ... IPN) from the other semiconductor positions included in the semiconductor valve. 14. A device according to claim 13, characterized in that the sensing member is adapted to determine whether the indicating signal delivered by the indicating channel of the checked semiconductor position is delayed in relation to indicating signals from the other semiconductor positions included in the semiconductor valve and that the evaluating member delivers a fault signal (VCF) if there is no delay. 15. A device according to claim 13, characterized in that the sensing member is adapted to determine if the indicating signal terminates within a given time after the application of the test firing pulse. 16. A device according to claim 15, characterized in that the sensing member comprises an interval-generating member (724) for generating a time interval which begins after a given first time after the application of the test firing signal and ends at a given second time thereafter. 17. A device according to claims 15-16, characterized in that the signal-generating member supplies the test firing signal at an electrical angle smaller than the minimum control angle of the semiconductor valve, counting from the rising zero crossing of the alternating voltage. 18. A device according to claims 15-16, characterized in that the signal-generating member supplies the test firing signal when an indicating signal is delivered by the indicating channel of the checked semiconductor position. 19. A device according to any of claims 15-16 and 18, wherein the semiconductor valve (VI, V2 , ... V6) is included in a converter in a bridge connection, characterized in that it comprises a selector member for evaluating the checked semiconductor position in dependence on firing signals (CP(1) , CP(2), ... CP(6)) generated by the valve control system of the converter for control of the semicon¬ ductor valve during normal operation. 20. A device according to any of claims 12-19, characterized in that the signal-generating member supplies the test firing channel with a test firing signal only when an indicating signal has been delivered by the indicating channel of the checked semiconductor position. 21. A device according to any of claims 12-20, characterized in that the signal-generating member supplies the firing channel of the semiconductor position with a test firing signal with reduced power.

Inventors: NYBERG KRISTER, SEPPAENEN ARI, NYBERG, KRISTER, SEPPAENEN, ARI
Applicants: ASEA BROWN BOVERI, NYBERG KRISTER, SEPPAENEN ARI, ASEA BROWN BOVERI AB
Application year: 1993
Main classification: G01R31
IPC codes: G01R31, H02M1