Method of manufacturing a superconducting device having a superconducting channel formed of oxide superconductor material

Abstract: A superconducting device comprises a substrate having a principal surface, a non-superconducting oxide layer having a similar crystal structure to that of an oxide superconductor formed on the principal surface, which can compensates the lattice mismatch between the substrate and the oxide superconductor, a superconducting source region and a superconducting drain region formed of c -axis oriented oxide superconductor thin films on the non-superconducting oxide layer, and an insulating region formed of a doped oxide superconductor on the non-superconducting oxide layer separating the superconducting source region and the superconducting drain region between them. On the insulating region an extremely thin superconducting channel formed of a c -axis oriented oxide superconductor thin film is arranged. The superconducting channel electrically connects the superconducting source region to the superconducting drain region, so that superconducting current can flow through the superconducting channel between the superconducting source region and the superconducting drain region. A gate electrode through a gate insulating layer is disposed on the superconducting channel for controlling the superconducting current flowing through the superconducting channel by the applied gate voltage. The superconducting source region, the superconducting drain region and the insulating region have the same thickness so that the extremely thin oxide superconductor thin film which constitutes the superconducting channel is formed flatwise.

Description: SPECIFICATION Background of the Invention Field of the invention The present invention relates to a method for manufacturing a superconducting device, and more specifically to a method for manufacturing a superconducting device having an extremely thin superconducting channel formed of oxide superconductor material. Description of related art Devices which utilize superconducting phenomena operate rapidly with low power consumption so that they have higher performance than conventional semiconductor devices. Particularly, by using an oxide superconducting material which has been recently advanced in study, it is possible to produce a superconducting device which operates at relatively high temperature. Josephson device is one of well-known superconducting devices. However, since Josephson device is a two-terminal device, a logic gate which utilizes Josephson devices becomes complicated configuration. Therefore, three-terminal superconducting devices are more practical. Typical three-terminal superconducting devices include two types of super-FET (field effect transistor). The first type of the super-FET includes a semiconductor channel, and a superconductor source electrode and a superconductor drain electrode which are formed closely to each other on both side of the semiconductor channel. A portion of the semiconductor layer between the superconductor source electrode and the superconductor drain electrode has a greatly recessed or undercut rear surface so as to have a reduced thickness. In addition, a gate electrode is formed through a gate insulating layer on the portion of the recessed or undercut rear surface of the semiconductor layer between the superconductor source electrode and the superconductor drain electrode. A superconducting current flows through the semiconductor layer (channel) between the superconductor source electrode and the superconductor drain electrode due to the superconducting proximity effect, and is controlled by an applied gate voltage. This type of the super-FET operates at a higher speed with a lower power consumption. The second type of the super-FET includes a channel of a superconductor formed between a source electrode and a drain electrode, so that a current flowing through the superconducting channel is controlled by a voltage applied to a gate formed above the superconducting channel. Both of the super-FETs mentioned above are voltage controlled devices which are capable of isolating output signals from input ones and of having a well defined gain. However, since the first type of the super-FET utilizes the superconducting proximity effect, the superconductor source electrode and the superconductor drain electrode have to be positioned within a distance of a few times the coherence length of the superconductor materials of the superconductor source electrode and the superconductor drain electrode. In particular, since an oxide superconductor has a short coherence length, a distance between the superconductor source electrode and the superconductor drain electrode has to be made less than about a few ten nanometers, if the superconductor source electrode and the superconductor drain electrode are formed of the oxide superconductor material. However, it is very difficult to conduct a fine processing such as a fine pattern etching, so as to satisfy the very short separation distance mentioned above. On the other hand, the super-FET having the superconducting channel has a large current capability, and the fine processing which is required to product the first type of the super-FET is not needed to product this type of super-FET. In order to obtain a complete ON/OFF operation by a signal voltage of several volts applied to the gate electrode, both of the superconducting channel and the gate insulating layer should have an extremely thin thickness. For example, the superconducting channel formed of an oxide superconductor material should have a thickness of less than five nanometers and the gate insulating layer should have a thickness more than ten nanometers which is sufficient to prevent a tunnel current. The super-FET has a superconducting source region and a superconducting drain region which have a sufficient thickness for forming contacts on them, for example more than 200 nanometers. Since, the relatively thick superconducting source region and the superconducting drain region are arranged at the both ends of the extremely thin superconducting channel, the super-FET may not have a planar upper surface. In this case, resolution of photolithography is spoiled so that the super-FET can not be manufactured so as to have a required fine structure. The amount of the integration of the super-FET is also limited by the resolution of photolithography . Furthermore, the European Patent Application EP-A-478 466 discloses a superconducting device comprising a substrate coated with a non-supraconducting oxide buffer layer, a c-axis oriented oxide superconductor layer including a non-superconducting region which is formed by diffusion of constituent element(s) of the substrate into the oxide superconductor layer, and an extremely thin superconducting channel. In addition, in a prior art, in order to increase the superconducting current through interfaces between the superconducting channel and the superconducting source region and between the superconducting channel and the superconducting drain region, the superconducting source region and the superconducting drain region may be processed by etching so that they are smoothly connected to the superconducting channel. However, the oxide superconductor thin films which constituted of the superconducting source region and the superconducting drain region are degraded during the etching so that the superconducting characteristics is affected. In addition, the etched surface of the oxide superconductor thin film is roughened. Therefore, if an oxide superconductor thin film which is constituted of the extremely thin superconducting channel is formed on the rough surface, its crystallinity and the superconducting properties are also affected. Additionally, an undesirable Josephson junction or resistance is generated at these interfaces. By this, the super-FET manufactured by the above conventional process does not have an enough performance. Summary of the Invention Accordingly, it is an object of the present invention to provide a method for manufacturing a FET type superconducting device which has overcome the above mentioned defects of the conventional ones. The above and other objects of the present invention are achieved in accordance with the present invention by a method of manufacturing a superconducting device, comprising the steps of: depositing on a principal surface of a substrat a non-superconducting oxide layer having a similar crystal structure to that of a c-axis oriented oxide superconductor thin film, depositing a first c-axis oriented oxide superconductor thin film having a sufficient thickness for forming a contact on the non-superconducting oxide layer, implanting an impurity ion beam to a portion located in the middle of the first oxide superconductor thin film so that an insulating region, which completely divides the first oxide superconductor thin film into a superconducting source region and a superconducting drain region and which has the same thickness as the superconducting source and drain regions, is formed, depositing a second extremely thin c-axis oriented oxide superconductor thin film so as to form a superconducting channel being formed of the same c-axis oriented oxide superconductor compound as the superconducting source region and the superconducting drain region, depositing an insulating layer on the second c-axis oriented oxide superconductor thin film and a conductor layer so as to form a gate electrode on a gate insulating layer on the superconducting channel. Preferably, the above non-superconducting oxide layer is formed of a Pr 1 Ba 2 Cu 3 O 7-y oxide. A c -axis oriented Pr 1 Ba 2 Cu 3 O 7-y thin film has almost the same crystal lattice structure as that of a c -axis oriented oxide superconductor thin film. It compensates the lattice mismatch between the substrate and the oxide superconductor, therefore, the crystalline incompleteness of the c -axis oriented oxide superconductor is greatly improved at its bottom located on the Pr 1 Ba 2 Cu 3 O 7-y thin film. In addition, the effect of diffusion of the constituent elements of Pr 1 Ba 2 Cu 3 O 7-y , into the oxide superconductor thin film is negligible and it also prevents the diffusion from substrate. Thus, the oxide superconductor thin film deposited on the Pr 1 Ba 2 Cu 3 O 7-y thin film has a high quality. In a preferred embodiment, the oxide superconductor is formed of high-T c (high critical temperature) oxide superconductor particularly, formed of a high-T c , copper-oxide type compound oxide superconductor for example a Y-Ba-Cu-O compound oxide superconductor material, a Bi-Si-Ca-Cu-O compound oxide superconductor material, and a Tl-Ba-Ca-Cu-O compound oxide superconductor material. In addition, the substrate can be formed of an insulating substrate, preferably an oxide single crystalline substrate such as MgO, SrTiO 3 , YSZ, etc. These substrate materials are very effective in forming or growing a crystalline film having a well defined crystalline orientation. In the above method in accordance with the present invention, no etching process is necessary for processing an oxide superconductor thin film. Therefore, oxide superconductor thin films of the super-FET are not degraded, so that the oxide superconductor thin films have good superconducting characteristics. In one preferred embodiment, the ion beam is implanted with an incident angle so that the tilt angles of the inclined sides of the insulating region relative to the surface of the first oxide superconductor thin film are not larger than 45°. It is not necessary that the ion beam is irradiated symmetrically to the surface of the superconductor thin film. According to still another aspect of the present invention, there is provided a method of manufacturing a superconducting device comprising the steps of : depositing on a principal surface of a substrat a non-superconducting oxide layer having a similar crystal structure to that of a c-axis oriented oxide superconductor thin layer, depositing a first c-axis oriented oxide superconductor thin film having a thickness of several parts of a superconducting source region and a superconducting drain region on the non-superconducting oxide layer, implanting an impurity ion beam to a portion located in the middle of the first oxide superconductor thin film so that an insulating region, which completely divides the oxide superconductor thin film into two parts, is formed, depositing another c-axis oriented oxide superconductor thin film of substantially the same thickness on the first oxide superconductor thin film having the insulating region, implanting an impurity ion beam to a portion located in the middle of the upper oxide superconductor thin film so that a narrower insulating region than that of the previously deposited oxide superconductor thin film, which completely divides this upper superconductor thin film into two parts is formed, repeating the processes of depositing an oxide superconductor thin film of substantially the same thickness and of forming a narrower insulating region than that of the lower oxide superconductor thin film by implanting the impurity ion beam so that a superconducting source region and a superconducting drain region having a sufficient thickness for forming contacts on them separated by an insulating region having a narrow spacing at the top, depositing an extremely thin c-axis oriented oxide superconductor thin film on the superconducting source region, the superconducting drain region and the insulating region so as to form a superconducting channel on the insulating region, this superconducting channel being formed of the same oxide superconductor compound as the superconducting source region and the superconducting drain region, depositing an insulating layer on the extremely thin c-axis oriented oxide superconductor thin film and a conductor layer so as to form a gate electrode on a gate insulating layer on the superconducting channel. The above and other objects, features and advantages of the present invention will be apparent from the following description of preferred embodiments of the invention with reference to the accompanying drawings. Brief Description of the Drawings Figures 1A to 1H are diagrammatic sectional views for illustrating an embodiment of the process in accordance with the present invention for manufacturing a super-FET; Figure 2 is a diagrammatic sectional view of one variation of the super-FET in accordance with the present invention; Figures 3A to 3H are diagrammatic sectional views for illustrating featured steps of a second embodiment of the process in accordance with the present invention for manufacturing the super-FET; Description of the Preferred embodiments Embodiment 1 Referring to Figures 1A to 1H, the process in accordance with the present invention for manufacturing the super-FET will be described. As shown in Figure 1A, a Pr 1 Ba 2 Cu 3 O 7-y oxide layer 15 is deposited on a SrTiO 3 (100) single crystalline substrate 5 by an MBE (Molecular Beam Epitaxy). The Pr 1 Ba 2 Cu 3 O 7-y oxide layer 15 is formed under a substrate temperature of 800 °C so as to have a thickness of 20 nanometers. A condition of forming the Pr 1 Ba 2 Cu 3 O 7-y oxide layer 15 by an MBE is as follows: Molecular beam source Pr: 1225°C and its crucible temperature Ba: 600°C Cu: 1040°C Pressure 1.333 x 10 -3 Pa (1 × 10 -5 Torr) When an oxide superconductor thin film is deposited on the Pr 1 Ba 2 Cu 3 O 7-y oxide layer 15, the Pr 1 Ba 2 Cu 3 O 7-y oxide layer 15 compensates imperfection of Cu-O planes of oxide superconductor crystals of the bottom portion the oxide superconductor thin film so that current capability of the oxide superconductor thin film is improved. For this purpose, the Pr 1 Ba 2 Cu 3 O 7-y oxide layer 15 preferably has a thickness of 10 to 30 nanometers and should have high crystallinity. If the Pr 1 Ba 2 Cu 3 O 7-y oxide layer 15 is thinner than 10 nanometers, the Pr 1 Ba 2 Cu 3 O 7-y oxide layer is insufficient to absorb the lattice mismatch between the substrate and the oxide superconductor so that it can not compensate the imperfection of the Cu-O planes. Even if the Pr 1 Ba 2 Cu 3 O 7-y , oxide layer 15 is thicker than 30 nanometers, the effect on the Cu-O planes is the same. An MgO (100) substrate and a YSZ (yttrium stabilized zirconia) can be also used as the substrate 5 instead of the SrTiO 3 (100) substrate. As shown in Figure 1B, a c -axis oriented Y 1 Ba 2 Cu 3 O 7-x oxide superconductor thin film 11 is deposited on the Pr 1 Ba 2 Cu 3 O 7-y oxide layer 15 by an MBE. The Y 1 Ba 2 Cu 3 O 7-x oxide superconductor thin film 11 is formed successively to the Pr 1 Ba 2 Cu 3 O 7-y oxide layer 15 by switching the Pr molecular beam source to a Y molecular beam source under a substrate temperature of 700 °C so as to have a thickness of 200 nanometers which is sufficient to form a contact on it. A condition of forming the Y 1 Ba 2 Cu 3 O 7-x oxide superconductor thin film 11 by an MBE is as follows: Molecular beam source Y: 1250°C and its crucible temperature Ba: 600°C Cu: 1040°C Pressure 1.333 x 10 -3 Pa (1 × 10 -5 Torr) Thereafter, as shown in Figure 1C, a Ga ion beam is implanted to a center portion of the Y 1 Ba 2 Cu 3 O 7-x oxide superconductor thin film 11 by a focussed ion beam apparatus with an energy of 50 keV so as to form an insulating region 50 having a width of 0.07 µm. The insulating region 50 is not necessary to be converted to a "complete" insulator, but is a material which is not in the superconducting state when the Y 1 Ba 2 Cu 3 O 7-x oxide superconductor is in the superconducting state. The amount of the dosed ions preferably from 1 × 10 16 to 1 × 10 18 cm -2 , and the ions are preferably selected from a group consisting of Ga, Au and Si. The insulating region 50 is formed by scanning the ion beam relative to the substrate 5 on which the Y 1 Ba 2 Cu 3 O 7-x oxide superconductor thin film 11 is formed so as to completely divide the Y 1 Ba 2 Cu 3 O 7-x oxide superconductor thin film 11 into a superconducting source region 2 and a superconducting drain region 3. In this connection, it is preferable that the ion beam implantation is successively carried out after the deposition of the Y 1 Ba 2 Cu 3 O 7-x oxide superconductor thin film 11 by using an MBE apparatus which possesses a focused ion beam gun. The insulating region 50 preferably has a width of 0.01 to 0.25 µm. If the insulating region 50 is thinner than 0.01 µm, tunnel current may flow between the superconducting source region 2 and the superconducting drain region 3 beyond the insulating region 50. If the insulating region is wider than 0.25 µm, the channel length becomes so long compared to its thickness that it is not favorable for production and also causes difficulty for high density integration. The energy of the ion beam is preferably 30 to 100 keV. If the energy of the ion beam is lower than 30 keV, the insulating region does not completely separate the Y 1 Ba 2 Cu 3 O 7-x oxide superconductor thin film 11. If the energy of the ion beam is higher than 100 keV, the surface of the Y 1 Ba 2 Cu 3 O 7-x oxide superconductor thin film 11 is destroyed and etched away. Then, as shown in Figure 1D, an extremely thin c -axis oriented Y 1 Ba 2 Cu 3 O 7-x superconductor thin film 1 having a thickness of 5 nanometers is formed on the insulating region 50, the superconducting source region 2 and the superconducting drain region 3. The Y 1 Sa 2 Cu 3 O 7-x superconductor thin film 1 is deposited by an MBE under the same condition as that of the Y 1 Ba 2 Cu 3 O 7-x superconductor thin film 11. A portion of the Y 1 Ba 2 Cu 3 O 7-x superconductor thin film 1 on the insulating region 50 becomes a superconducting channel 10. Thereafter, a SrTiO 3 film 17 which will be a gate insulating layer is deposited on the Y 1 Ba 2 Cu 3 O 7-x superconductor thin film 1 also by an MBE as shown in Figure 1E. The SrTiO 3 film 17 has a thickness of 10 nanometers which is sufficient to prevent tunnel current. Then, a Pt layer 14 which will be a gate electrode on the SrTiO 3 film 17 is deposited by an electron beam assisted evaporation, as shown in Figure 1F. Thereafter, as shown in Figure 1G, the part of the Pt layer 14 is etched by an ion milling using Ar ions and the part of the SrTiO 3 film 17 is also etched by a wet etching using HF so that the Pt layer 14 and the SrTiO 3 film 17 are completely removed excluding a portion on the insulating region 50 so as to form a gate electrode 4 and a gate insulating layer 7. The width of the gate electrode 4 and the gate insulating layer 7 are preferably longer than the width of the insulating region 50 in order to obtain good operating properties. Finally, as shown in Figure 1H, metal source and drain electrodes 12 and 13 of Au are formed on the superconducting source region 2 and the superconducting drain region 3. With this, the super-FET in accordance with the present invention is completed. In the above mentioned method in accordance with the present invention, no etching process is necessary to define the channel area from an oxide superconductor thin film. Therefore, oxide superconductor thin films of the super-FET manufactured by the above method are not degraded, so that the oxide superconductor thin films have good superconducting characteristics. In addition, since the superconducting channel 10, the part of the superconducting source region 2 and the part of the superconducting drain region 3 are formed of the same c -axis oriented oxide superconductor thin films, the above mentioned super-FET manufactured in accordance with the embodiment of the method of the present invention has no undesirable resistance nor undesirable Josephson junction between the superconducting channel 10 and the superconducting source region 2 and between the superconducting channel 10 and the superconducting drain region 3. Upper surfaces of the insulating region 50, the superconducting source region 2 and the superconducting drain region 3 are made at the same level. By this, the extremely thin oxide superconductor thin film 1 which constitutes the superconducting channel 10 can be formed flatwise. This improves resolution of photolithography so that the gate insulating layer 7, the gate electrode 4, the source electrode 12 and the drain electrode 13 can be accurately formed using photolithography. In particular, the gate insulating layer 7 and the gate electrode 4 should be accurately formed in size and position to obtain the excellent performance. The above structures of the insulating region 50, the superconducting source region 2 and the superconducting drain region 3 make the fine processing possible which is needed to accurately form the gate insulating layer 7 and the gate electrode 4. Figure 2 shows a sectional view of a variation of the above mentioned super-FET. The super-FET shown in Figure 2 has an insulating region 50 of which the width of the top portion is narrower than that of the bottom portion and of which the tilt angles α of the sides are 30°. The inclined sides of the insulating region 50 improve the conductance of superconducting current flowing from the superconducting source region 2 into the extremely thin superconducting channel 10 and flowing from the extremely thin superconducting channel 10 to the superconducting drain region 3. For this purpose, the tilt angles α of the sides of the insulating region 50 are preferably smaller than 40°. If the tilt angles α are larger than 45°, the superconducting current does not flow so efficiently. It is not necessary that the tilt angles α are the same. Each of the tilt angles α preferably has a different value which is required by the characteristics of the superconducting current flow, or of the superconducting source region and the superconducting drain region. Embodiment 2 Referring to Figures 3A to 3H, a second embodiment of the process for manufacturing the superconducting device will be described. In this second embodiment, the same processings as those shown in Figures 1A is performed. After the Pr 1 Ba 2 Cu 3 O 7-y oxide layer 15 is formed on the substrate 5, a c -axis oriented Y 1 Ba 2 Cu 3 O 7-x oxide superconductor thin film 21 is deposited on the Pr 1 Ba 2 Cu 3 O 7-y oxide layer 15 by an MBE, as shown in Figur 3A. The Y 1 Ba 2 Cu 3 O 7-x oxide superconductor thin film 21 is formed successively to the Pr 1 Ba 2 Cu 3 O 7-y oxide layer 15 by switching the Pr molecular beam source to a Y molecular beam source under a substrate temperature of 700 °C so as to have a thickness of 50 nanometers. A condition of forming the Y 1 Ba 2 Cu 3 O 7-x oxide superconductor thin film 21 by an MBE is as follows: Molecular beam source Y: 1250°C and its crucible temperature Ba: 600°C Cu: 1040°C Pressure 1.333 x 10 -3 Pa (1 × 10 -5 Torr) Thereafter, as shown in Figure 3B, a Ga ion beam is implanted to a center portion of the Y 1 Ba 2 Cu 3 O 7-y oxide superconductor thin film 21 by a focused ion beams apparatus with an energy of 50 keV so as to form an insulating region 51 having a width of 0.75 µm. The insulating region 51 is formed by scanning the ion beam relative to the substrate 5 on which the Y 1 Ba 2 Cu 3 O 7-x oxide superconductor thin film 21 is formed so as to completely divide the Y 1 Ba 2 Cu 3 O 7-x oxide superconductor thin film 21 into two parts. In this connection, it is preferable that the ion beam implantation is successively carried out after the deposition of the Y 1 Ba 2 Cu 3 O 7-x oxide superconductor thin film 21 by rising an MBE apparatus which possesses a focused ion beam gun. The insulating region 51 preferably has a width of from 0.6 to 1.0 µm. If the insulating region 51 is narrower than 50 nanometers, tunnel current may flow between the two parts beyond the insulating region 51. As explained hereinafter, the insulating region is formed so as to have a narrow spacing at the top. Therefore, in order to insure a sufficient spacing at the top, the insulating region 51 preferably has a width at least 0.6 µm. If the insulating region is wider than 1.0 µm, the size of the device becomes so large that it is not favorable for high density integration. The energy of the ion beam is preferably 30 to 100 keV. If the energy of the ion beam is lower than 30 keV, the insulating region does not completely divide the Y 1 Ba 2 Cu 3 O 7-x oxide superconductor thin film 21. If the energy of the ion beam is higher than 100 keV, the surface of the Y 1 Ba 2 Cu 3 O 7-x oxide superconductor thin film 21 is destroyed and etched away. Then, another c -axis oriented Y 1 Ba 2 Cu 3 O 7-x oxide superconductor thin film 22 is deposited on the Y 1 Ba 2 Cu 3 O 7-x , oxide superconductor thin film 21, as shown in Figure 3C. The Y 1 Ba 2 Cu 3 O 7-x oxide superconductor thin film 22 is formed by a MBE under the same condition as that of the Y 1 Ba 2 Cu 3 O 7-x oxide superconductor thin film 21 so as to have the same thickness as that of the Y 1 Ba 2 Cu 3 O 7-x oxide superconductor thin film 21. Thereafter, a Ga ion beam is implanted to a center portion of the Y 1 Ba 2 Cu 3 O 7-x oxide superconductor thin film 22 by a focused ion beam apparatus with an energy of 50 keV so as to form an insulating region 52 having a width of 0.50 µm, as shown in Figure 3D. The insulating region 52 is formed to be little narrower than the insulating region 51. Repeating the above process, an oxide superconductor layer which is divided into a superconducting source region 2 and a superconducting drain region 3 by an insulating region 50 having a narrow spacing at the top, as shown in Figure 3E. In this embodiment, the above process is repeated four times. Namely, the Y 1 Ba 2 Cu 3 O 7-x oxide superconductor thin film having a thickness of 50 nanometers is deposited and the insulating region is formed at the center portion of the Y 1 Ba 2 Cu 3 O 7-x oxide superconductor thin film by an ion beam implantation four times, so that a superconducting source region 2 and a superconducting drain region 3 having a thickness of 200 nanometers are formed. In the above mentioned process, each of the c -axis oriented Y 1 Ba 2 Cu 3 O 7-x oxide superconductor thin films preferably has a thickness of 30 to 70 nanometers. If the oxide superconductor thin films are thinner than 30 nanometers, many repetition of the process is necessary for forming the superconducting source region 2 and the superconducting drain region 3 having an enough thickness. This results low productivity. If the oxide superconductor thin films are thicker than 70 nanometers, the sides of the insulating region does not have smooth interfaces. In adddition, the required energy of ion beam for forming the insulating region becomes larger so that each of the surfaces of the oxide superconductor thin films may have a danger to be destroyed. Thereafter, as shown in Figure 3F, an extremely thin c -axis oriented Y 1 Ba 2 Cu 3 O 7-x superconductor thin film 1 having a thickness of 5 nanometers is formed on the insulating region 50, the superconducting source region 2 and the superconducting drain region 3. The Y 1 Ba 2 Cu 3 O 7-x superconductor thin film 1 is deposited by an MBE under the same condition as that of the Y 1 Ba 2 Cu 3 O 7-x superconductor thin film 21. A portion of the Y 1 Ba 2 Cu 3 O 7-x superconductor thin film 1 on the insulating region 50 becomes a superconducting channel 10. Then, as shown in Figure 3G, a gate electrode 4 of Au and a gate insulating layer 7 of SrTiO 3 are formed by the same process as Embodiment 1. The width of the gate electrode 4 and the gate insulating layer 7 are preferably longer than that of the insulating region 50 at the top to obtain good properties. Finally, as shown in Figure 3H, metal source and drain electrodes 12 and 13 of Au are formed on the superconducting source region 2 and the superconducting drain region 3. With this, the super-FET in accordance with the present invention is completed. In the above mentioned method in accordance with the present invention, no etching process is necessary to define the channel area from an oxide superconductor thin film. Therefore, oxide superconductor thin films of the super-FET manufactured by the above method are not degraded, so that the oxide superconductor thin films have good superconducting characteristics. In particular, in the above process the insulating region which divides the oxide superconducior thin film into the superconducting source region and the superconducting drain region is formed by repeating processes of forming a thin oxide superconductor thin film and of implanting an ion beam to its center portion so as to form an insulating region. Since the oxide superconductor thin films are thinner, the energy of the ion beam can be lowered so that the surfaces of the oxide superconductor thin films are free from degradation. The repeating processes can be carried out in one chamber so that the interfaces between the oxide superconductor thin films substantially disappear and the oxide superconductor thin films are substantially continuous. In addition, the insulating region 50 has a narrow spacing at the top. The inclined sides of the insulating region 50 improve the conductance of the superconducting current flowing from the superconducting source region 2 into the extremely thin superconducting channel 10 and flowing from the extremely thin superconducting channel 10 to the superconducting drain region 3. Since the superconducting channel 10, the part of the superconducting source region 2 and the part of the superconducting drain region 3 are formed of c -axis oriented oxide superconductor thin films, the above mentioned super-FET manufactured in accordance with the embodiment of the method of the present invention, has no undesirable resistance nor undesirable Josephson junction between the superconducting channel 10 and the superconducting source region 2 and between the superconducting channel 10 and the superconducting drain region 3.

Claims: A method of manufacturing a superconducting device, comprising the steps of: depositing on a principal surface of a substrat (5) a non-superconducting oxide layer (15) having a similar crystal structure to that of a c-axis oriented oxide superconductor thin film, depositing a first c-axis oriented oxide superconductor thin film (11) having a sufficient thickness for forming a contact on the non-superconducting oxide layer, implanting an impurity ion beam to a portion located in the middle of the first oxide superconductor thin film (11) so that an insulating region (50), which completely divides the first oxide superconductor thin film into a superconducting source region (2) and a superconducting drain region (3) and which has the same thickness as the superconducting source and drain regions (2, 3), is formed, depositing a second extremely thin c-axis oriented oxide superconductor thin film (1) so as to form a superconducting channel (10) being formed of the same c-axis oriented oxide superconductor compound as the superconducting source region (2) and the superconducting drain region (3), depositing an insulating layer (17) on the second c-axis oriented oxide superconductor thin film (1) and a conductor layer (14) so as to form a gate electrode (4) on a gate insulating layer (7) on the superconducting channel (10). A method claimed in claim 1, characterized in that the ion beam is implanted with a sufficient incident angle relative to the first oxide superconductor thin film (11) so as to form the insulating region (50) having inclined sides. A method claimed in claim 2, characterized in that the ion beam is implanted with an incident angle so that the tilt angles α of the inclined sides of the insulating region (50) relative to the surface of the first oxide superconductor thin film (11) are not larger than 45°. A method claimed in anyone of claim 1 to 3, characterized in that the energy of the ion beam is 30 to 100 Kev. A method claimed in anyone of claim 1 to 4, characterized in that the amount of the implanted ions is comprised between 1x10 16 and 1x10 18 cm -2 . A method claimed in anyone of claim 1 to 5, characterized in that the implanted ions are selected from a group consisting of Ga, Au, and Si. A method claimed in anyone of claim 1 to 6, characterized in that the ion beam is implanted in such a manner that the formed insulating region (50) has a width of 0.01 to 0.25 µm. A method claimed in anyone of claim 1 to 7, characterized in that the first oxide superconductor thin film has a thickness not lower than 200 nm. A method of manufacturing a superconducting device comprising the steps of: depositing on a principal surface of a substrat (5) a non-superconducting oxide layer (15) having a similar crystal structure to that of a c-axis oriented oxide superconductor thin layer, depositing a first c-axis oriented oxide superconductor thin film (21) having a thickness of several parts of a superconducting source region (2) and a superconducting drain region (3) on the non-superconducting oxide layer (15), implanting an impurity ion beam to a portion located in the middle of the first oxide superconductor thin film so that an insulating region (51), which completely divides the oxide superconductor thin film (21) into two parts, is formed, depositing another c-axis oriented oxide superconductor thin film (22) of substantially the same thickness on the first oxide superconductor thin film (21) having the insulating region (51), implanting an impurity ion beam to a portion located in the middle of the upper oxide superconductor thin film (22) so that a narrower insulating region (52) than that of the previously deposited oxide superconductor thin film, which completely divides this upper superconductor thin film (22) into two parts, is formed, repeating the processes of depositing an oxide superconductor thin film of subtantially the same thickness and of forming a narrower insulating region than that of the lower oxide superconductor thin film by implanting the impurity ion beam so that a superconducting source region (2) and a superconducting drain region (3) having a sufficient thickness for forming contacts on them separated by an insulating region (50) having a narrow spacing at the top, depositing an extremely thin c-axis oriented oxide superconductor thin film (1) on the superconducting source region (2), the superconducting drain region (3) and the insulating region (50) so as to form a superconducting channel (10) on the insulating region (50), this superconducting channel being formed of the same oxide superconductor compound as the superconducting source region (2) and the superconducting drain region (3), depositing an insulating layer (17) on the extremely thin c-axis oriented oxide superconductor thin film and a conductor layer (14) so as to form a gate electrode (4) on a gate insulating layer (7) on the superconducting channel. A method claimed in claim 9, characterized in that each oxide superconductor thin film (21, 22) having an insulating region (51, 52) has a thickness of 30 to 70 nm.

Inventors: IIYAMA MICHITOMO, NAKAMURA TAKAO, IIYAMA, MICHITOMO, NAKAMURA, TAKAO
Applicants: SUMITOMO ELECTRIC INDUSTRIES, SUMITOMO ELECTRIC INDUSTRIES, LTD.
Application year: 1993
Main classification: H01L39
IPC codes: H01L39