Method of preparing a semiconductor substrate

Abstract: A semiconductor substrate comprises an insulating layer and a compound semiconductor monocrystal thin film formed on said insulating layer, the thermal expansion coefficient of said insulating layer being in the range of 60%-140% of that of said monocrystal thin film.

Description: BACKGROUND OF THE INVENTION Field of the Invention The present invention relates to a method for preparing the semiconductor substrate. More specifically, it relates to a method for preparing a semiconductor substrate suitable for dielectric isolation, or an electronic device or an integrated circuit formed in a monocrystalline semiconductor layer on an insulator. Related Background Art It is widely known that the formation of a monocrystalline semiconductor layer on an insulator is accomplished by a silicon oil insulator (SOI) technique. A device formed by the utilization of the SOI technique has various advantages which cannot be achieved by a bulk Si substrate for use in the manufacture of a usual Si integrated circuit, and for this reason, many researches have been conducted. That is, by utilizing the SOI technique, the following advantages can be obtained: 1. dielectric isolation is easy, and high integration is possible, 2. excellent radiation resistance can be obtained, 3. floating capacity can be reduced, and speed up is possible, 4. a well step can be omitted, 5. latch up can be prevented, and 6. a complete depletion type field effect transistor can be obtained by the formation of a thin film. In order to realize the above-mentioned many advantages based on device characteristics, researches have been made about formation methods of the SOI structure over the last several tens years. The content of the researches is summarized in the following literature. Special Issue: "Single-crystal silicon on non-single-crystal insulators"; edited by G. W. Cullen, Journal of Crystal Growth, Volume 63, No. 3, pp. 429-590 (1983). From old times, SOS (silicon on sapphire) has been known which can be formed by the hetero-epitaxy of Si on a monocrystal sapphire substrate by the use of CVD (chemical vapor deposition). This has succeeded for the present as the ripest SOI technique. In this case, however, many crystal defects are formed owing to lattice mismatch in the interface between an Si layer and an underlying sapphire substrate, and the Si layer tends to be contaminated with alumina coming from the sapphire substrate. Above all, the substrate of SOS is expensive and the development of are enlargement is late, which prevents the expansion of its application. In relatively recent years, it has been attempted to realize the SOI structure without using the sapphire substrate. This attempt can be classified into the following three categories. (1) After the surface oxidization of an Si monocrystal substrate, a window is formed to partially expose the Si substrate, and epitaxial growth is then carried out in a lateral direction, using this exposed portion as a seed, to form an Si monocrystal layer on SiO 2 (in this case, an Si layer is simultaneously deposited on SiO 2 ). (2) The Si monocrystal substrate itself is used as an active layer, and SiO 2 is then formed under the same (in this procedure, no Si layer is deposited). (3) After the epitaxial growth of Si on the Si monocrystal substrate, dielectric isolation is carried out (this method is accompanied by the deposition of the Si layer). However, Si is an indirect transition type semiconductor, and in order to form an optical device such as a light emitting element, a monocrystal layer of the III-V group, particularly GaAs or the like of a direct transition type is required. A method for preparing the monocrystal thin film of the III-V group comprises first forming a nucleus for the lattice information of the crystal or a stripe-like pattern from SiN or the like, and then growing it in accordance with MBE (molecular beam epitaxy) or MOCVD (metal organic CVD). However, a monocrystal region is limited to a region of at most several µm, and since a crystal direction is unsettled, it is difficult to apply the monocrystal thin film to semiconductor devices, still more integrated circuits. In the case that a compound semiconductor such as GaAs is epitaxially grown on the Si substrate, a grown film is poor in crystallinity because of the difference of a lattice constant and a thermal expansion coefficient, and therefore it is very difficult to apply the grown film to devices. Japanese Jounal of Appl. Phys., Part 2 (letters), December 1989, Japan, Vol. 28, No. 12, pp. L2141-L2143 discloses the formation of a GaAs semiconductor thin film on an insulating layer for preparation of a semiconductor substrate. The problem of different thermal expansion coefficients of a GaAs and a Si layer is addressed in this reference and specific conditions for bonding GaAs wafers to Si wafers which are either bare or thermally oxidized, were examined. US-A-4,891,329 is related to a method of forming a non-silicon semiconductor on an insulator by forming a thin heteroepitaxial layer of a non-silicon semiconductor on a first substrate having a lattice structure which matches that of the heteroepitaxial layer. An insulating layer is bonded to the surface of the heteroepitaxial layer (e.g. GaAs). This structure is bonded to a second substrate having thereon a second insulating layer so that the two insulating layers are contacted face-by-face. The heteroepitaxial layer is exposed by etching the first substrate. With this technology, there is still the danger of deteriorating the heteroepitaxial layer in the etching step. SUMMARY OF THE INVENTION An object of the present invention is to provide a III-V group monocrystalline substrate formed on an insulating layer which can solve the above-mentioned problems and meet the above-mentioned requirements, and to provide a method for preparing the substrate. Another object of the present invention is to provide a method for preparing a semiconductor substrate which permits economically manufacturing a monocrystal compound semiconductor having a large area with high productivity and high uniformity under high control, and to provide the semiconductor substrate prepared by this method. These objects can be achieved by the present invention as defined in claim 1. BRIEF DESCRIPTION OF THE DRAWINGS Each of Figs. 1 to 12 is a schematic view illustrating one embodiment of a method for preparing a semiconductor substrate of the present invention. DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS Preferable aspects regarding a semiconductor substrate of the present invention are as follows. That is, a semiconductor substrate of the present invention comprises an insulating layer and a compound semiconductor monocrystal thin film formed on the insulating layer, the thermal expansion coefficient of the insulating layer being in the range of 60%-140%, preferably 80-120% of that of the monocrystal thin film. The method for preparing the semiconductor substrate of the present invention comprises a step of porousifying a surface layer on at least the main surface side of a first Si substrate, a step of oxidizing the inside walls of the pores of the porous Si layer, a step of forming a monocrystal compound semiconductor layer on the porous Si layer, a step of bonding the surface of the monocrystal compound semiconductor layer to the main surface of a second substrate other than the first Si substrate, a first etching step of removing the first Si substrate by selective etching after the bonding step, and a second etching step removing the exposed porous Si layer by selective etching with an etching solution having a high Si etching rate to the monocrystal compound semiconductor after the first etching step. The semiconductor substrate prepared by the method according to the present invention has the excellent monocrystal compound semiconductor region having a long carrier life time, extremely few defects and a uniform film thickness on the insulator, and thus it is applicable to various semiconductor devices. Furthermore, the semiconductor member of the present invention can be applied to semiconductor devices having high responsiveness and high reliability. The preparation method of the semiconductor member of the present invention is excellent in productivity, uniformity, controllability and economy in obtaining, on the insulator, the monocrystal compound semiconductor layer in which crystallinity is so excellent as to be comparable to a monocrystal wafer. The preparation method of the semiconductor member of the present invention permits doing the treatment effectively in a short period of time, and so it is excellent in productivity and economy, as described in detail in the undermentioned examples. Furthermore, in the present invention, the selective etching is carried out in the two steps, and therefore the monocrystal compound semiconductor layer can be easily obtained which is uniform and flat over a large area and which has extremely excellent crystallinity. Now, the present invention will be described with reference to embodiments. Embodiments As shown in Fig. 1A, an Si monocrystal substrate 501 is first prepared, and the surface of this substrate 501 is made porous 502 and an oxide film is formed on the inside walls of pores in the porous Si layer. Furthermore, a monocrystal compound semiconductor layer 503 is formed on the porous Si [Fig. 1B]. As shown in Fig. 1C, another Si substrate 504 is brought into close contact with the monocrystal compound semiconductor layer 503 at room temperature, followed by anodization, pressurizing, a heat treatment, or a combination thereof, to bond them to each other, whereby the Si substrate 504 is firmly bonded to the monocrystal layer 503. Next, the Si substrate side only of the bonded substrates is covered with a mask 505 having etching resistance [Fig. 1D], and the Si monocrystal substrate 501 is removed by etching, utilizing the porous Si layer 502 as an etch-stop layer [Fig. 1E]. This first selective etching can be achieved by using an etching solution having a higher etching rate to Si than to SiO 2 , for example, hydrofluoric nitric acid type, ethylenediamine + pyrocatechol + water, or KOH type. Furthermore, the porous Si 502 only is chemically etched with an etching solution having a high Si etching rate to the compound semiconductor, so that the thinned monocrystal compound semiconductor layer 503 remains on the Si substrate 504. Finally, as shown in Fig. 1F, the monocrystal compound semiconductor 503 is formed on the Si substrate 504. Since the thus obtained semiconductor substrate has the uniform and flat monocrystal compound semiconductor layer thereon having a large area, it can be suitably used as a compound semiconductor substrate. Next, reference will be made to an embodiment shown in Figs. 2A to 2F in which an insulating layer is interposed between the monocrystal layer 503 and the Si substrate 504 shown in Fig. 1 in order to bond them. In Fig. 2, the same members as in Fig. 1 are represented by the same symbols. In Figs. 2A to 2F, the Si substrate 504 and the monocrystal compound semiconductor layer 503 are bonded to each other with the interposition of an insulating layer 515. This insulating layer 515 can be formed on at least one of the monocrystal compound semiconductor layer 503 and the Si substrate 504, or alternatively it can be interposed between the layers 503 and 504. Next, the Si substrate side only of the bonded substrates is covered with a mask 506 having etching resistance [Fig. 2D], and Si monocrystal substrate 501 is removed by etching, utilizing the porous Si layer 502 as an etch-stop layer [Fig. 2E]. This first selective etching can be achieved as described above. Furthermore, the porous Si layer 502 only is chemically etched with an etching solution having a high Si etching rate to the compound semiconductor, so that the thinned monocrystal compound semiconductor layer 503 remains on the insulating substrates 515 and 504. In Fig. 2F, the semiconductor substrate with the mask being removed is shown which has been obtained in this embodiment. In this constitution, the monocrystal compound semiconductor layer 503 is formed on the insulating substrates 515 and 504. The thus obtained semiconductor substrate can be suitably used as a compound semiconductor substrate or a dielectrically isolated electronic element. Next, reference will be made to an embodiment shown in Figs. 3A to 3F and 4A to 4F in which an Si substrate 504 shown in Figs. 1A to 1F is replaced with a light-transmissive substrate. In Figs. 3A to 3F and 4A to 4F, reference numeral 514 is a light-transmissive substrate, and the same members as in Figs. 1A to 1F and 2A to 2F are represented by the same symbols. A difference between a process shown in Figs. 3A to 3F and a process shown in Figs. 4A to 4F is that an insulating layer 515 is present or not. In the processes shown in Figs. 1 to 5, after the bonding of the substrates, the Si monocrystal substrate 501 can be removed by polishing or grinding until the porous Si layer 502 is nearly exposed [Figs. 5D, 6D, 7D and 8D], and the first etching can be then carried out. It is also possible to polish or grind the Si monocrystal substrate 501 until the porous Si layer 502 is exposed [Figs. 9D, 10D, 11D and 12D]. It is well known that the oxidation of the inside walls of the porous Si is effective to inhibit the structure change of porous Si by a heat treatment, but in this embodiment, in addition thereto, the oxidation is also effective to improve the selective ratio of the etching in the first step. Since the inside surfaces of the porous Si are covered with an oxide film, the porous Si layer functions as a sufficient etch-stop layer in the selective etching of bulk Si in the first stage, when an etching solution having a high etching rate to Si than to SiO 2 is used. The second etching in this embodiment can be achieved by chemically etching porous Si only with an etching solution having a high Si etching rate to the compound semiconductor. In this embodiment, there is used the Si monocrystal substrate which has excellent economy and extremely excellent crystallinity and which is uniform and flat over a large area, and the substrate is etched so as to leave the compound semiconductor active layer formed on the surface of the substrate, whereby the monocrystal compound semiconductor layer having remarkably few defects can be obtained on another Si substrate. Furthermore, in the present invention, the monocrystal compound semiconductor layer having good crystallinity can be formed on porous Si, and this semiconductor layer can be transferred onto the Si substrate or the insulating substrate having a large area. In consequence, the difference of a lattice constant and a thermal expansion coefficient which is the problem of a conventional technique can be sufficiently inhibited, and in consequence, the compound semiconductor layer having the good crystallinity can be formed on the Si substrate or the insulating substrate. Now, the present invention will be described in detail in reference to examples, but the scope of the present invention should not be limited to these examples. Example 1 A first p-type or n-type (100) monocrystal Si substrate having a thickness of 625 µm, a diameter of 6 inches and a specific resistance of 0.01 Ω·cm was subjected to anodization in an HF solution. Anodization conditions were as follows: Current density: 5 mA·cm -2 Anodization solution: HF:H 2 O:C 2 H 5 OH = 1:1:1 Time: 12 minutes Thickness of porous Si: 10 µm Porosity: 45% This substrate was oxidized at 400°C for 1 hour in an oxygen atmosphere, and owing to this oxidation, the inside walls of pores in the porous Si were covered with thermally oxidized films. On this porous Si, a monocrystal GaAs layer having a thickness of 1 µm was epitaxially grown by an MOCVD (metal organic chemical vapor deposition) method. Growth conditions were as follows: Source gas: TMG/AsH 3 /H 2 Gas pressure: 80 Torr Temperature: 700°C The first substrate was superposed upon a second Si substrate so that the surface the GaAs layer of the first substrate was brought into contact with the surface of the second substrate, and they were then subjected to a heat treatment at 900°C for 1 hour to firmly bond both the substrates to each other. Next, the second Si substrate only of the bonded substrates was covered with Si 3 N 4 , and the first Si substrate was then etched with a 66HNO 3 + 24HF solution so as to remain as much as 10 µm. Afterward, the monocrystal Si substrate having a thickness of 10 µm was selectively etched with 1HF + 20HNO 3 + 20CH 3 COOH under the function of the porous Si layer in which the inside walls of the pores were oxidized, as an etch-stop layer. After 10 minutes, the first Si substrate was all etched, so that the porous Si layer was exposed. Afterward, the oxide films on the pore inside walls in the porous Si layer were removed with hydrofluoric acid, and the porous Si was then etched at 110°C with ethylenediamine + pyrocatechol + water (in a ratio of 17 ml:3 g:8 ml). After 1 minute, monocrystal GaAs remained without etching, but the porous Si substrate was selectively etched and completely removed under the function of monocrystal GaAs as an etch-stop material. An etching rate of monocrystal GaAs with the etching solution was so extremely low as to be practically negligible, and thus the reduction of its thickness was slight. That is, after the Si 3 N 4 layer on the back surface was removed, the monocrystal GaAs layer having a thickness of 1 µm could be formed on the Si substrate. The selective etching of the porous Si did not affect the monocrystal GaAs layer at all. As a result of section observation by a transmission electron microscope, it was confirmed that additional crystal defects were not generated in the GaAs layer and good crystallinity was maintained. Example 2 A first p-type or n-type (100) monocrystal Si substrate having a thickness of 625 µm, a diameter of 5 inches and a specific resistance of 0.01 Ω·cm was subjected to anodization in an HF solution. Anodization conditions were as follows: Current density: 10 mA·cm -2 Anodization solution: HF:H 2 O:C 2 H 5 OH = 1:1:1 Time: 24 minutes Thickness of porous Si: 20 µm Porosity: 47% This substrate was oxidized at 400°C for 2 hours in an oxygen atmosphere, and owing to this oxidation, the inside walls of pores in the porous Si were covered with thermally oxidized films. On this porous Si, a monocrystal AlGaAs layer having a thickness of 0.5 µm was epitaxially grown by an MBE (molecular beam epitaxy) method. The first substrate was superposed upon a second Si substrate so that the AlGaAs layer of the first substrate was brought into contact with the surface of the second substrate, and they were then subjected to a heat treatment at 800°C for 2 hours to firmly bond both the substrates to each other. Next, the second Si substrate only of the bonded substrates was covered with Si 3 N 4 , and the first Si substrate was then etched at 110°C with ethylenediamine + pyrocatechol + water (in a ratio of 17 ml:3 g:8 ml) so as to remain as much as 10 µm. Afterward, the monocrystal Si substrate having a thickness of 10 µm was selectively etched with 1HF + 40HNO 3 + 40CH 3 COOH under the function of the porous Si layer in which the inside walls of the pores were oxidized, as an etch-stop layer. After 20 minutes, the first Si substrate was all etched, so that the porous Si layer was exposed. Afterward, the porous Si layer was etched with a hydrofluoric acid solution. After 2 minutes, monocrystal AlGaAs remained without etching, but the porous Si substrate was selectively etched and completely removed under the function of monocrystal AlGaAs as an etch-stop material. An etching rate of monocrystal AlGaAs with the etching solution was so extremely low as to be practically negligible, and thus the reduction of its thickness was slight. That is, after the Si 3 N 4 layer on the back surface was removed, the monocrystal AlGaAs layer having a thickness of 1 µm could be formed on the Si substrate. The selective etching of the porous Si did not affect the monocrystal AlGaAs layer at all. As a result of section observation by a transmission electron microscope, it was confirmed that additional crystal defects were not generated in the AlGaAs layer and good crystallinity was maintained. Example 3 A first p-type or n-type (100) monocrystal Si substrate having a thickness of 625 µm, a diameter of 6 inches and a specific resistance of 0.01 Ω·cm was subjected to anodization in an HF solution. Anodization conditions were as follows: Current density: 5 mA·cm -2 Anodization solution: HF:H 2 O:C 2 H 5 OH = 1:1:1 Time: 24 minutes Thickness of porous Si: 20 µm Porosity: 45% This substrate was oxidized at 400°C for 2 hours in an oxygen atmosphere, and owing to this oxidation, the inside walls of pores in the porous Si were covered with thermally oxidized films. On this porous Si, a monocrystal GaP layer having a thickness of 2 µm was epitaxially grown by a liquid growth method. The first substrate was superposed upon a second Si substrate so that the GaP layer of the first substrate was brought into contact with the surface of the second substrate, and they were then subjected to an anodic bonding method at room temperature to strongly join both the substrates together. Afterward, they were further subjected to a heat treatment at 700°C for 2 hours to firmly bond both the substrates to each other. Next, the second Si substrate only of the bonded substrates was covered with Si 3 N 4 , and the first Si substrate was then etched with a 66HNO 3 + 34HF solution so as to remain as much as 10 µm. Afterward, the monocrystal Si substrate having a thickness of 10 µm was selectively etched with 6 M KOH under the function of the porous Si layer in which the inside walls of the pores were oxidized, as an etch-stop layer. After 10 minutes, the first Si substrate was all etched, so that the porous Si layer was exposed. Afterward, the oxide films on the pore inside walls in the porous Si layer were removed with hydrofluoric acid, and the porous Si was then etched at 110°C with ethylenediamine + pyrocatechol + water (in a ratio of 17 ml:3 g:8 ml). After 2 minutes, monocrystal GaP remained without etching, but the porous Si substrate was selectively etched and completely removed under the function of monocrystal GaP as an etch-stop material. An etching rate of monocrystal GaP with the etching solution was so extremely low as to be practically negligible, and thus the reduction of its thickness was slight. That is, after the Si 3 N 4 layer on the back surface was removed, the monocrystal GaP layer having a thickness of 2 µm could be formed on the Si substrate. The selective etching of the porous Si did not affect the monocrystal GaP layer at all. As a result of section observation by a transmission electron microscope, it was confirmed that additional crystal defects were not generated in the GaP layer and good crystallinity was maintained. Example 4 A first p-type or n-type (100) monocrystal Si substrate having a thickness of 525 µm, a diameter of 4 inches and a specific resistance of 0.01 Ω·cm was subjected to anodization in an HF solution. Anodization conditions were as follows: Current density: 5 mA·cm -2 Anodization solution: HF:H 2 O:C 2 H 5 OH = 1:1:1 Time: 24 minutes Thickness of porous Si: 20 µm Porosity: 45% This substrate was oxidized at 400°C for 2 hours in an oxygen atmosphere, and owing to this oxidation, the inside walls of pores in the porous Si were covered with thermally oxidized films. On this porous Si, a monocrystal GaAs layer having a thickness of 1 µm was epitaxially grown by a MOCVD method. The first substrate was superposed upon a second Si substrate so that the GaAs layer of the first substrate was brought into contact with the surface of the second substrate, and they were then subjected to an anodic bonding method at 800°C to join both the substrates together. Afterward, they were further subjected to a heat treatment to firmly bond both the substrates to each other. Next, the first Si substrate was removed by grinding and polishing so as to remain as much as 10 µm, and the monocrystal Si substrate having a thickness of 10 µm was selectively etched at 110°C with ethylenediamine + pyrocatechol + water (in a ratio of 17 ml:3 g:8 ml) under the function of the porous Si layer in which the inside walls of the pores were oxidized, as an etch-stop layer. After 15 minutes, the first Si substrate was all etched, so that the porous Si layer was exposed. Afterward, the oxide films on the pore inside walls in the porous Si layer were removed with hydrofluoric acid, and the porous Si was then etched at 110°C with ethylenediamine + pyrocatechol + water (in a ratio of 17 ml:3 g:8 ml). After 2 minutes, monocrystal GaAs remained without etching, but the porous Si substrate was selectively etched and completely removed under the function of monocrystal GaAs functioned as an etch-stop material. An etching rate of monocrystal GaAs with the etching solution was so extremely low as to be practically negligible, and thus the reduction of its thickness was slight. That is, the monocrystal GaAs layer having a thickness of 1 µm could be formed on the Si substrate. The selective etching of the porous Si did not affect the monocrystal GaAs layer at all. As a result of section observation by a transmission electron microscope, it was confirmed that additional crystal defects were not generated in the GaAs layer and good crystallinity was maintained. Example 5 A first p-type or n-type (100) monocrystal Si substrate having a thickness of 625 µm, a diameter of 5 inches and a specific resistance of 0.01 Ω·cm was subjected to anodization in an HF solution. Anodization conditions were as follows: Current density: 5 mA·cm -2 Anodization solution: HF:H 2 O:C 2 H 5 OH = 1:1:1 Time: 12 minutes Thickness of porous Si: 10 µm Porosity: 45% This substrate was oxidized at 400°C for 1 hour in an oxygen atmosphere, and owing to this oxidation, the inside walls of pores in the porous Si were covered with thermally oxidized films. On this porous Si, a monocrystal GaAs layer having a thickness of 0.3 µm was epitaxially grown by an MBE method. Furthermore, an SiO 2 layer having a thickness of 500 nm was formed on this epitaxial Si layer by a CVD method. The first substrate was superposed upon a second Si substrate so that the SiO 2 layer of the first substrate was brought into contact with the surface of the second substrate, and they were then subjected to an anodic bonding method at 800°C to firmly bond both the substrates to each other. Next, the first Si substrate was removed by grinding and polishing so as to remain as much as 5 µm, and the monocrystal Si substrate having a thickness of 10 µm was selectively etched with 1HF + 10HNO 3 + 10CH 3 COOH under the function of the porous Si layer in which the inside walls of the pores were oxidized, as an etch-stop layer. After 5 minutes, the first Si substrate was all etched, so that the porous Si layer was exposed. Afterward, the oxide films on the pore inside walls in the porous Si layer were etched with hydrofluoric acid, and the porous Si was then etched with at 115°C with ethylenediamine + pyrazine + water (in a ratio of 7.5 ml:2.4 g:2.4 ml). After 1 minute, monocrystal GaAs remained without etching, but the porous Si substrate was selectively etched and completely removed under the function of monocrystal GaAs as an etch-stop material. An etching rate of monocrystal GaAs with the etching solution was so extremely low as to be practically negligible, and thus the reduction of its thickness was slight. That is, the monocrystal GaAs layer having a thickness of 1 µm could be formed on the Si substrate. The selective etching of the porous Si did not affect the monocrystal GaAs layer at all. As a result of section observation by a transmission electron microscope, it was confirmed that additional crystal defects were not generated in the GaAs layer and good crystallinity was maintained. Example 6 A first p-type or n-type (100) monocrystal Si substrate having a thickness of 625 µm, a diameter of 6 inches and a specific resistance of 0.01 Ω·cm was subjected to anodization in an HF solution. Anodization conditions were as follows: Current density: 5 mA·cm -2 Anodization solution: HF:H 2 O:C 2 H 5 OH = 1:1:1 Time: 12 minutes Thickness of porous Si: 10 µm Porosity: 45% This substrate was oxidized at 400°C for 1 hour in an oxygen atmosphere, and owing to this oxidation, the inside walls of pores in the porous Si were covered with thermally oxidized films. On this porous Si, a monocrystal GaAs layer having a thickness of 1 µm was epitaxially grown by an MOCVD (metal organic chemical vapor deposition) method. Growth conditions were as follows: Source gas: TMG/AsH 3 /H 2 Gas pressure: 80 Torr Temperature: 700°C The first substrate was superposed upon a second Si substrate having a thermally oxidized film of 500 nm thick thereon so that the GaAs layer of the first substrate was brought into contact with the SiO 2 layer of the second substrate, and they were then subjected to a heat treatment at 900°C for 1 hour to firmly bond both the substrates to each other. Next, the second Si substrate only of the bonded substrates was covered with Si 3 N 4 , and the first Si substrate was then etched with a 66HNO 3 + 34HF solution so as to remain as much as 10 µm. Afterward, the monocrystal Si substrate having a thickness of 10 µm was selectively etched with 1HF + 20HNO 3 + 20CH 3 COOH under the function of the porous Si layer in which the inside walls of the pores were oxidized, as an etch-stop layer. After 10 minutes, the first Si substrate was all etched, so that the porous Si layer was exposed. Afterward, the oxide films on the pore inside walls in the porous Si layer were removed with hydrofluoric acid, and the porous Si was then etched at 110°C with ethylenediamine + pyrocatechol + water (in a ratio of 17 ml:3 g:8 ml). After 1 minute, monocrystal GaAs remained without etching, but the porous Si substrate was selectively etched and completely removed under the function of monocrystal GaAs as an etch-stop material. An etching rate of monocrystal GaAs with the etching solution was so extremely low as to be practically negligible, and thus the reduction of its thickness was slight. That is, after the Si 3 N 4 layer on the back surface was removed, the monocrystal GaAs layer having a thickness of 1 µm could be formed on the insulating substrate. The selective etching of the porous Si did not affect the monocrystal GaAs layer at all. As a result of section observation by a transmission electron microscope, it was confirmed that additional crystal defects were not generated in the GaAs layer and good crystallinity was maintained. Example 7 A first p-type or n-type (100) monocrystal Si substrate having a thickness of 625 µm, a diameter of 5 inches and a specific resistance of 0.01 Ω·cm was subjected to anodization in an HF solution. Anodization conditions were as follows: Current density: 10 mA·cm -2 Anodization solution: HF:H 2 O:C 2 H 5 OH = 1:1:1 Time: 24 minutes Thickness of porous Si: 20 µm Porosity: 47% This substrate was oxidized at 400°C for 2 hours in an oxygen atmosphere, and owing to this oxidation, the inside walls of pores in the porous Si were covered with thermally oxidized films. On this porous Si, a monocrystal AlGaAs layer having a thickness of 0.5 µm was epitaxially grown by an MBE (molecular beam epitaxy) method. The first substrate was superposed upon a second Si substrate having a thermally oxidized film of 500 nm thick thereon so that the AlGaAs layer of the first substrate was brought into contact with the SiO 2 layer of the second substrate, and they were then subjected to a heat treatment at 800 °C for 2 hours to firmly bond both the substrates to each other. Next, the second Si substrate only of the bonded substrates was covered with Si 3 N 4 , and the first Si substrate was then etched at 110°C with ethylenediamine + pyrocatechol + water (in a ratio of 17 ml:3 g:8 ml) so as to remain as much as 10 µm. Afterward, the monocrystal Si substrate having a thickness of 10 µm was selectively etched with 1HF + 40HNO 3 + 40CH 3 COOH under the function of the porous Si layer in which the inside walls of the pores were oxidized, as an etch-stop layer. After 20 minutes, the first Si substrate was all etched, so that the porous Si layer was exposed. Afterward, the porous Si layer was etched with a hydrofluoric acid solution. After 2 minutes, monocrystal AlGaAs remained without etching, but the porous Si substrate was selectively etched and completely removed under the function of monocrystal AlGaAs as an etch-stop material. An etching rate of monocrystal AlGaAs with the etching solution was so extremely low as to be practically negligible, and thus the reduction of its thickness was slight. That is, after the Si 3 N 4 layer on the back surface was removed, the monocrystal AlGaAs layer having a thickness of 1 µm could be formed on the insulating substrate. The selective etching of the porous Si did not affect the monocrystal AlGaAs layer at all. As a result of section observation by a transmission electron microscope, it was confirmed that additional crystal defects were not generated in the AlGaAs layer and good crystallinity was maintained. Example 8 A first p-type or n-type (100) monocrystal Si substrate having a thickness of 625 µm, a diameter of 6 inches and a specific resistance of 0.01 Ω·cm was subjected to anodization in an HF solution. Anodization conditions were as follows: Current density: 5 mA·cm -2 Anodization solution: HF:H 2 O:C 2 H 5 OH = 1:1:1 Time: 24 minutes Thickness of porous Si: 20 µm Porosity: 45% This substrate was oxidized at 400°C for 2 hours in an oxygen atmosphere, and owing to this oxidation, the inside walls of pores in the porous Si were covered with thermally oxidized films. On this porous Si, a monocrystal GaP layer having a thickness of 2 µm was epitaxially grown by a liquid growth method. The first substrate was superposed upon a second Si substrate having a thermally oxidized film of 500 nm thick thereon so that the GaP layer of the first substrate was brought into contact with the SiO 2 layer of the second substrate, and they were then subjected to an anodic bonding method at room temperature to strongly join both the substrates together. Afterward, they were further subjected to a heat treatment at 700°C for 2 hours to firmly bond both the substrates to each other. Next, the second Si substrate only of the bonded substrates was covered with Si 3 N 4 , and the first Si substrate was then etched with a 66HNO 3 + 34HF solution so as to remain as much as 10 µm. Afterward, the monocrystal Si substrate having a thickness of 10 µm was selectively etched with 6 M KOH under the function of the porous Si layer in which the inside walls of the pores were oxidized, as an etch-stop layer. After 10 minutes, the first Si substrate was all etched, so that the porous Si layer was exposed. Afterward, the oxide films on the pore inside walls in the porous Si layer were removed with hydrofluoric acid, and the porous Si was then etched at 110°C with ethylenediamine + pyrocatechol + water (in a ratio of 17 ml:3 g:8 ml). After 2 minutes, monocrystal GaP remained without etching, but the porous Si substrate was selectively etched and completely removed under the function of monocrystal GaP as an etch-stop material. An etching rate of monocrystal GaP with the etching solution was so extremely low as to be practically negligible, and thus the reduction of its thickness was slight. That is, after the Si 3 N 4 layer on the back surface was removed, the monocrystal GaP layer having a thickness of 2 µm could be formed on the Si substrate. The selective etching of the porous Si did not affect the monocrystal GaP layer at all. As a result of section observation by a transmission electron microscope, it was confirmed that additional crystal defects were not generated in the GaP layer and good crystallinity was maintained. Example 9 A first p-type or n-type (100) monocrystal Si substrate having a thickness of 525 µm, a diameter of 4 inches and a specific resistance of 0.01 Ω·cm was subjected to anodization in an HF solution. Anodization conditions were as follows: Current density: 5 mA·cm -2 Anodization solution: HF:H 2 O:C 2 H 5 OH = 1:1:1 Time: 24 minutes Thickness of porous Si: 20 µm Porosity: 45% This substrate was oxidized at 400°C for 2 hours in an oxygen atmosphere, and owing to this oxidation, the inside walls of pores in the porous Si were covered with thermally oxidized films. On this porous Si, a monocrystal GaAs layer having a thickness of 1 µm was epitaxially grown by an MOCVD method. The first substrate was superposed upon a second Si substrate having a thermally oxidized film of 500 nm thick thereon so that the GaAs layer of the first substrate was brought into contact with the SiO 2 layer of the second substrate, and they were then subjected to an anodic bonding method at 800°C to join both the substrates together. Afterward, they were further subjected to a heat treatment to firmly bond both the substrates to each other. Next, the first Si substrate was removed by grinding and polishing so as to remain as much as 10 µm, and the monocrystal Si substrate having a thickness of 10 µm was selectively etched at 110°C with ethylenediamine + pyrocatechol + water (in a ratio of 17 ml:3 g:8 ml) under the function of the porous Si layer in which the inside walls of the pores were oxidized, as an etch-stop layer. After 15 minutes, the first Si substrate was all etched, so that the porous Si layer was exposed. Afterward, the oxide films on the pore inside walls in the porous Si layer were removed with hydrofluoric acid, and the porous Si was then etched at 110°C with ethylenediamine + pyrocatechol + water (in a ratio of 17 ml:3 g:8 ml). After 2 minutes, the monocrystal GaAs remained without etching, but the porous Si substrate was selectively etched and completely removed under the function of monocrystal GaAs functioned as an etch-stop material. The etching rate of monocrystal GaAs with the etching solution was so extremely low as to be practicably negligible, and thus the reduction of its thickness was slight. That is, the monocrystal GaAs layer having a thickness of 1 µm was formed on the insulating substrate. The selective etching of the porous Si did not affect the monocrystal GaAs layer at all. As a result of section observation by a transmission electron microscope, it was confirmed that additional crystal defects were not generated in the GaAs layer and good crystallinity was maintained. Example 10 A first p-type or n-type (100) monocrystal Si substrate having a thickness of 625 µm, a diameter of 5 inches and a specific resistance of 0.01 Ω·cm was subjected to anodization in an HF solution. Anodization conditions were as follows: Current density: 5 mA·cm -2 Anodization solution: HF:H 2 O:C 2 H 5 OH = 1:1:1 Time: 12 minutes Thickness of porous Si: 10 µm Porosity: 45% This substrate was oxidized at 400°C for 1 hour in an oxygen atmosphere, and owing to this oxidation, the inside walls of pores in the porous Si were covered with thermally oxidized films. On this porous Si, a monocrystal GaAs layer having a thickness of 0.3 µm was epitaxially grown by an MBE method. Furthermore, an SiO 2 layer having a thickness of 500 nm was formed on this epitaxial Si layer by a CVD method. The first substrate was superposed upon a second Si substrate having an Si 3 N 4 film of 200 nm thick thereon so that the SiO 2 layer of the first substrate was brought into contact with the Si 3 N 4 layer of the second substrate, and they were then subjected to an anodic bonding method at 800°C to firmly bond both the substrates to each other. Next, the first Si substrate was removed by grinding and polishing so as to remain as much as 5 µm, and the monocrystal Si substrate having a thickness of 10 µm was selectively etched with 1HF + 10HNO 3 + 10CH 3 COOH under the function of the porous Si layer in which the inside walls of the pores were oxidized, as an etch-stop layer. After 5 minutes, the first Si substrate was all etched, so that the porous Si layer was exposed. Afterward, the oxide films on the pore inside walls in the porous Si layer were removed with hydrofluoric acid, and the porous Si was then etched at 115°C with ethylenediamine + pyrazine + water (in a ratio of 7.5 ml:2.4 g:2.4 ml). After 1 minute, monocrystal GaAs remained without etching, but the porous Si substrate was selectively etched and completely removed under the function of monocrystal GaAs as an etch-stop material. An etching rate of monocrystal GaAs with the etching solution was so extremely low as to be practicably negligible, and thus the reduction of its thickness was slight. That is, the monocrystal GaAs layer having a thickness of 1 µm could be formed on the insulating substrate. The selective etching of the porous Si did not affect the monocrystal GaAs layer at all. As a result of section observation by a transmission electron microscope, it was confirmed that additional crystal defects were not generated in the GaAs layer and good crystallinity was maintained. Example 11 A first p-type or n-type (100) monocrystal Si substrate having a thickness of 625 µm, a diameter of 6 inches and a specific resistance of 0.01 Ω·cm was subjected to anodization in an HF solution. Anodization conditions were as follows: Current density: 5 mA·cm -2 Anodization solution: HF:H 2 O:C 2 H 5 OH = 1:1:1 Time: 12 minutes Thickness of porous Si: 10 µm Porosity: 45% This substrate was oxidized at 400°C for 1 hour in an oxygen atmosphere, and owing to this oxidation, the inside walls of pores in the porous Si were covered with thermally oxidized films. On this porous Si, a monocrystal GaAs layer having a thickness of 1 µm was epitaxially grown by an MOCVD (metal organic chemical vapor deposition) method. Growth conditions were as follows: Source gas: TMG/AsH 3 /H 2 Gas pressure: 80 Torr Temperature: 700°C The first substrate was superposed upon another fused silica substrate so that the GaAs layer of the first substrate was brought into contact with the surface of the silica substrate, and they were then subjected to a heat treatment at 400°C for 2 hours to firmly bond both the substrates to each other. Next, the fused silica substrate only of the bonded substrates was covered with Si 3 N 4 , and the first Si substrate was then etched with a 66HNO 3 + 24HF solution so as to remain as much as 10 µm. Afterward, the monocrystal Si substrate having a thickness of 10 µm was selectively etched with 1HF + 20HNO 3 + 20CH 3 COOH under the function of the porous Si layer in which the inside walls of the pores were oxidized, as an etch-stop layer. After 10 minutes, the first Si substrate was all etched, so that the porous Si layer was exposed. Afterward, the oxide films on the pore inside walls in the porous Si layer were removed with hydrofluoric acid, and the porous Si was then etched at 110°C with ethylenediamine + pyrocatechol + water (in a ratio of 17 ml:3 g:8 ml). After 1 minute, monocrystal GaAs remained without etching, but the porous Si substrate was selectively etched and completely removed under the function of monocrystal GaAs as an etch-stop material. An etching rate of monocrystal GaAs with the etching solution was so extremely low as to be practicably negligible, and thus the reduction of its thickness was slight. After the etching mask on the back surface was removed, a heat treatment was carried out at 900°C for 30 minutes to reinforce the bonding strength. That is, the monocrystal GaAs layer having a thickness of 1 µm was formed on the fused silica substrate. The selective etching of the porous Si did not affect the monocrystal GaAs layer at all. As a result of section observation by a transmission electron microscope, it was confirmed that additional crystal defects were not generated in the GaAs layer and good crystallinity was maintained. Example 12 A first p-type or n-type (100) monocrystal Si substrate having a thickness of 625 µm, a diameter of 5 inches and a specific resistance of 0.01 Ω·cm was subjected to anodization in an HF solution. Anodization conditions were as follows: Current density: 10 mA·cm -2 Anodization solution: HF:H 2 O:C 2 H 5 OH = 1:1:1 Time: 24 minutes Thickness of porous Si: 20 µm Porosity: 47% This substrate was oxidized at 400°C for 2 hours in an oxygen atmosphere, and owing to this oxidation, the inside walls of pores in the porous Si were covered with thermally oxidized films. On this porous Si, a monocrystal AlGaAs layer having a thickness of 0.5 µm was epitaxially grown by an MBE (molecular beam epitaxy) method. The first substrate was superposed upon a glass substrate having a softening point of about 800°C so that the AlGaAs layer of the first substrate was brought into contact with the surface of the glass substrate, and they were then subjected to a heat treatment at 300°C for 2 hours to firmly bond both the substrates to each other. Next, the glass substrate only of the bonded substrates was covered with Si 3 N 4 , and the first Si substrate was then etched at 110°C with ethylenediamine + pyrocatechol + water (in a ratio of 17 ml:3 g:8 ml) so as to remain as much as 10 µm. Afterward, the monocrystal Si substrate having a thickness of 10 µm was selectively etched with 1HF + 40HNO 3 + 40CH 3 COOH under the function of the porous Si layer in which the inside walls of the pores were oxidized, as an etch-stop layer. After 20 minutes, the first Si substrate was all etched, so that the porous Si layer was exposed. Afterward, the porous Si layer was etched with a hydrofluoric acid solution. After 2 minutes, monocrystal AlGaAs remained without etching, but the porous Si substrate was selectively etched and completely removed under the function of monocrystal AlGaAs as an etch-stop material. An etching rate of monocrystal AlGaAs with the etching solution was so extremely low as to be practicably negligible, and thus the reduction of its thickness was slight. After the etching mask on the back surface was removed, a heat treatment was carried out at 900°C for 30 minutes to build up the bonding strength. That is, the monocrystal AlGaAs layer having a thickness of 1 µm was formed on the glass substrate. The selective etching of the porous Si did not affect the monocrystal AlGaAs layer at all. As a result of section observation by a transmission electron microscope, it was confirmed that additional crystal defects were not generated in the AlGaAs layer and good crystallinity was maintained. Example 13 A first p-type or n-type (100) monocrystal Si substrate having a thickness of 625 µm, a diameter of 6 inches and a specific resistance of 0.01 Ω·cm was subjected to anodization in an HF solution. Anodization conditions were as follows: Current density: 5 mA·cm -2 Anodization solution: HF:H 2 O:C 2 H 4 OH = 1:1:1 Time: 24 minutes Thickness of porous Si: 20 µm Porosity: 45% This substrate was oxidized at 400°C for 2 hours in an oxygen atmosphere, and owing to this oxidation, the inside walls of pores in the porous Si were covered with thermally oxidized films. On this porous Si, a monocrystal GaP layer having a thickness of 2 µm was epitaxially grown by a liquid growth method. The first substrate was superposed upon a glass substrate having a softening point of about 500°C and having SiO 2 /Si 3 N 4 thereon so that the GaP layer of the first substrate was brought into contact with the SiO 2 surface of the glass substrate, and they were then subjected to an anodic bonding method at room temperature to strongly join both the substrates together. Afterward, they were further subjected to a heat treatment at 200°C for 2 hours to firmly bond both the substrates to each other. Next, the glass substrate only of the bonded substrates was covered with Si 3 N 4 , and the first Si substrate was then etched with a 66HNO 3 + 34HF solution so as to remain as much as 10 µm. Afterward, the monocrystal Si substrate having a thickness of 10 µm was selectively etched with 6 M KOH under the function of the porous Si layer in which the inside walls of the pores were oxidized, as an etch-stop layer. After 10 minutes, the first Si substrate was all etched, so that the porous Si layer was exposed. Afterward, the oxide films on the pore inside walls in the porous Si layer were removed with hydrofluoric acid, and the porous Si was then etched at 110°C with ethylenediamine + pyrocatechol + water (in a ratio of 17 ml:3 g:8 ml). After 2 minutes, monocrystal GaP remained without etching, but the porous Si substrate was selectively etched and completely removed under the function of monocrystal GaP as an etch-stop material. An etching rate of monocrystal GaP with the etching solution was so extremely low as to be practicably negligible, and thus the reduction of its thickness was slight. After the etching mask on the back surface was removed, a heat treatment was carried out at 700°C for 30 minutes to reinforce the bonding strength. That is, the monocrystal GaP layer having a thickness of 2 µm was formed on the glass substrate. The selective etching of the porous Si did not affect the monocrystal GaP layer at all. As a result of section observation by a transmission electron microscope, it was confirmed that additional crystal defects were not generated in the GaP layer and good crystallinity was maintained. Example 14 A first p-type or n-type (100) monocrystal Si substrate having a thickness of 525 µm, a diameter of 4 inches and a specific resistance of 0.01 Ω·cm was subjected to anodization in an HF solution. Anodization conditions were as follows: Current density: 5 mA·cm -2 Anodization solution: HF:H 2 O:C 2 H 5 OH = 1:1:1 Time: 24 minutes Thickness of porous Si: 20 µm Porosity: 45% This substrate was oxidized at 400°C for 2 hours in an oxygen atmosphere, and owing to this oxidation, the inside walls of pores in the porous Si were covered with thermally oxidized films. On this porous Si, a monocrystal GaAs layer having a thickness of 1 µm was epitaxially grown by an MOCVD method. The first substrate was superposed upon a fused silica substrate so that the GaAs layer of the first substrate was brought into contact with the surface of the silica substrate, and they were then subjected to an anodic bonding method at 400°C to bond both the substrates to each other. Next, the first Si substrate was removed by grinding and polishing so as to remain as much as 10 µm, and the fused silica substrate only of the bonded substrates was then covered with Si 3 N 4 . Afterward, the monocrystal Si substrate having a thickness of 10 µm was selectively etched at 110°C with ethylenediamine + pyrocatechol + water (in a ratio of 17 ml:3 g:8 ml) under the function of the porous Si layer in which the inside walls of the pores were oxidized, as an etch-stop layer. After 15 minutes, the first Si substrate was all etched, so that the porous Si layer was exposed. Afterward, the oxide films on the pore inside walls in the porous Si layer were removed with hydrofluoric acid, and the porous Si was then etched at 110°C with ethylenediamine + pyrocatechol + water (in a ratio of 17 ml:3 g:8 ml). After 2 minutes, monocrystal GaAs remained without etching, but the porous Si substrate was selectively etched and completely removed under the function of monocrystal GaAs functioned as an etch-stop material. An etching rate of monocrystal GaAs with the etching solution was so extremely low as to be practicably negligible, and thus the reduction of its thickness was slight. After the etching mask on the back surface was removed, a heat treatment was carried out at 800°C for 30 minutes to reinforce the bonding strength. That is, the monocrystal GaAs layer having a thickness of 1 µm was formed on the fused silica substrate. The selective etching of the porous Si did not affect the monocrystal GaAs layer at all. As a result of section observation by a transmission electron microscope, it was confirmed that additional crystal defects were not generated in the GaAs layer and good crystallinity was maintained. Example 15 A first p-type or n-type (100) monocrystal Si substrate having a thickness of 625 µm, a diameter of 5 inches and a specific resistance of 0.01 Ω·cm was subjected to anodization in an HF solution. Anodization conditions were as follows: Current density: 5 mA·cm -2 Anodization solution: HF:H 2 O:C 2 H 5 OH = 1:1:1 Time: 12 minutes Thickness of porous Si: 10 µm Porosity: 45% This substrate was oxidized at 400°C for 1 hour in an oxygen atmosphere, and owing to this oxidation, the inside walls of pores in the porous Si were covered with thermally oxidized films. On this porous Si, a monocrystal GaAs layer having a thickness of 0.3 µm was epitaxially grown by an MBE method. Furthermore, an SiO 2 layer having a thickness of 500 nm was formed on this epitaxial Si layer by a CVD method. The first substrate was superposed upon a fused silica substrate so that the SiO 2 layer of the first substrate was brought into contact with the surface of the silica substrate, and they were then subjected to an anodic bonding method at 300°C to firmly bond both the substrates to each other. Next, the first Si substrate was removed by grinding and polishing so as to remain as much as 5 µm, and the fused silica substrate only of the bonded substrates was then covered with Si 3 N 4 . Afterward, the monocrystal Si substrate having a thickness of 10 µm was selectively etched with 1HF + 10HNO 3 + 10CH 3 COOH under the function of the porous Si layer in which the inside walls of the pores were oxidized, as an etch-stop layer. After 5 minutes, the first Si substrate was all etched, so that the porous Si layer was exposed. Afterward, the oxide films on the pore inside walls in the porous Si layer were etched with hydrofluoric acid, and the porous Si was then etched with at 115°C with ethylenediamine + pyrazine + water (in a ratio of 7.5 ml:2.4 g:2.4 ml). After 1 minute, monocrystal GaAs remained without etching, but the porous Si substrate was selectively etched and completely removed under the function of monocrystal GaAs as an etch-stop material. An etching rate of monocrystal GaAs with the etching solution was so extremely low as to be practicably negligible, and thus the reduction of its thickness was slight. After the etching mask on the back surface was removed, a heat treatment was carried out at 900°C for 30 minutes to reinforced the bonding strength. That is, after the Si 3 N 4 layer on the back surface was removed, the monocrystal GaAs layer having a thickness of 1 µm could be formed on the fused silica substrate. The selective etching of the porous Si did not affect the monocrystal GaAs layer at all. As a result of section observation by a transmission electron microscope, it was confirmed that additional crystal defects were not generated in the GaAs layer and good crystallinity was maintained.

Claims: A method of preparing a semiconductor substrate which comprises a step of porosifying a surface layer (502) on at least the main surface side of a first Si substrate (501), a step of oxidizing the inside walls of the pores of the porous Si layer, a step of forming a monocrystal compound semiconductor layer (503) on said porous Si layer, a step of bonding the surface of said monocrystal compound semiconductor layer to the main surface of a second substrate (504) other than said first Si substrate, a step of exposing said porous Si layer (502) after said bonding step, and an etching step of removing the exposed porous Si layer (502) by selective etching with an etching solution having a high Si etching rate to said monocrystal compound semiconductor after said exposing step. The method of preparing a semiconductor substrate according to claim 1, wherein said exposing step consists in a first etching step of removing said first Si substrate (501) by selective etching and said etching step of removing the exposed porous Si layer is a second etching step. The method of preparing a semiconductor substrate according to claim 1, wherein said second substrate comprises a Si substrate. The method of preparing a semiconductor substrate according to claim 1, wherein said second substrate is a Si substrate on which an insulating layer (515) is formed. The method of preparing a semiconductor substrate according to claim 1, wherein said second substrate is a light-transmissive substrate (514). The method of preparing a semiconductor substrate according to claim 1, wherein said oxidizing step of said porous Si layer is carried out by thermal oxidation, spontaneous oxidation in the atmosphere, oxidation in a washing step such as RCA, or a combination thereof.

Inventors: MIYAWAKI MAMORU, SAKAGUCHI KIYOFUMI, YONEHARA TAKAO, MIYAWAKI, MAMORU, SAKAGUCHI, KIYOFUMI, YONEHARA, TAKAO, MIYAWAKI, MAMORU, C/O CANON KABUSHIKI KAISHA, SAKAGUCHI, KIYOFUMI, C/O CANON KABUSHIKI KAISHA, YONEHARA, TAKAO, C/O CANON KABUSHIKI KAISHA
Applicants: CANON KK, CANON KABUSHIKI KAISHA
Application year: 1993
Main classification: H01L21
IPC codes: H01L31, H01L21