Compound semiconductor device and fabrication method of producing the compound semiconductor device

Abstract: A fabrication method of producing a compound semiconductor device includes a first growth step of performing an epitaxial growth on a semiconductor substrate in a growth furnace to form a wafer, an interruption step of once interrupting the epitaxial growth and putting the wafer formed in the first growth step out of the growth furnace, and a second growth step of putting the wafer processed in the interruption step into the growth furnace and performing the second growth on the fine uneven structure of the wafer. The interruption step includes an uneven structure forming step of forming a fine uneven structure on an epitaxial crystalline surface of the wafer, on which a second growth is needed, formed in the first growth step, or an uneven structure forming step of forming at least two kinds of fine uneven structures which are superposed on the common epitaxial crystal surface of the wafer formed in the first growth step. According to the fabrication method, a compound semiconductor device can be readily fabricated, which includes a semiconductor substrate, a first growth epitaxial-layer structure on the substrate, at least one kind of fine uneven structure or at least two kinds of superposed fine uneven structures on the entire epitaxial crystal surface of the first growth epitaxial-layer structure, and a second growth epitaxial-layer structure on the fine uneven structure or structures.

Description: BACKGROUND OF THE INVENTION Field of the Invention The present invention relates to a fabrication method of producing a compound semiconductor device of AlGaAs/GaAs series or the like in which a material such as AlGaAs and GaAs is regrown on a material such as AlGaAs, which is once exposed to an atmosphere, and a compound semiconductor device produced by using such a fabrication method. Related Background Art When devices such as a semiconductor laser, which includes a grating, are fabricated, a regrowth technique should be necessarily utilized on a wafer after the wafer is once exposed to an atmosphere and subjected to a certain process. Especially, in the case of a tunable distributed Bragg reflection (DBR) type laser which is, as shown in Fig. 1, provided with a region with a diffraction grating 545 and a region without such a grating and in which current is injectable into the region with the diffraction grating 545, a fabrication process is complicated. In Fig. 1, reference numeral 531 designates a GaAs substrate. On the substrate 531, an n-AlGaAs cladding layer 532, an active layer 533, a p-AlGaAs carrier confinement layer 534, a p-AlGaAs light guide layer 535, a p-AlGaAs cladding layer 536 and a contact layer 537 are formed in the named order. Two p-electrodes 540 and 542 are formed on the divided contact layer 537, and an n-electrode 543 is formed on the bottom surface of the substrate 531. Fig. 2 shows a cross-section of a DBR laser device fabricated by a prior art method. Figs. 3A-3F show fabrication steps of such a prior art fabrication method. The fabrication method will be described. In Fig. 3A, on the n-GaAs substrate 531, n-AlGaAs cladding layer 532, active layer 533, p-AlGaAs carrier confinement layer 534, p-AlGaAs light guide layer 535, p-AlGaAs cladding layer 536, and contact layer 537 are grown by a conventional molecular beam epitaxy (MBE) method or the like. Thus, a laser structure is fabricated. Next, as shown in Fig. 3B, a region without the diffraction grating 545 is covered with a resist 539, and an etching process is performed down to the light guide layer 535. Then, as illustrated in Fig. 3C, a diffraction grating of a resist 538, which is different from the resist 539, is patterned, and another etching process is performed to form the diffraction grating 545 solely on the light guide layer 535, as shown in Fig. 3D. Resists 538 and 539 are removed as illustrated in Fig. 3E. Then, as shown in Fig. 3F, p-AlGaAs cladding layer 536 and contact layer 537 are selectively regrown only on the region with the diffraction grating 545 by using a conventional liquid phase epitaxy (LPE) method or the like. Thus, when a semiconductor laser with a diffraction grating is fabricated, it is necessary to expose a wafer to an atmosphere once and then perform a regrowth process on the wafer after the wafer is subjected to a certain process such as a grating forming process. However, when the fabrication is conducted by using the producing method described with reference to Figs. 3A-3F, a regrowth boundary is likely to have a step 550 as shown in Fig. 2, and thus an uneven surface appears on the wafer. As a result, the patterning will be difficult to achieve in a later burying process step (e. g., in order to fabricate a lateral confinement structure, a stripe-shaped pattern is formed and an etching is conducted with this pattern used as a mask, and then a regrowth is carried out), an electrode forming step (e. g., the stripe-shaped electrodes 540 and 542 as shown in Fig. 1 are formed), and other steps. Further, when the wafer is mounted to a heat sink in a p-side down manner (i. e., an upper side of the wafer near the active layer 533 is mounted to a heat sink), the problem of deteriorated heat contact occurs. The step 550 appears since the growth speed on a side surface (e.g., a side surface 551 of the etched cladding layer 536 shown in Fig. 3E) of crystal is greater than the growth speed on a flat surface of crystal. A difference in growth speed can be reduced under an appropriate condition in a conventional metal organic chemical vapor deposition (MOCVD) method, but the step 550 cannot be completely eliminated. Further, as shown in Fig. 3C, the resist 538 accumulates at a boundary corner of the etched light guide layer 535 and the layer thickness of resist 538 thereat increases. Thus, an area occurs where the diffraction grating 545 cannot be formed, as shown in Fig. 3D. Consequently, a designed structure cannot be fully fabricated. In the above-discussed producing method, the diffraction grating 545 is formed after the active layer 533 is grown, so the problem also occurs that the active layer 533 is likely to be subjected to a process damage. To solve this problem, the following method is considered preferable: After a first growth process up to the light guide layer 535, the diffraction grating 545 is partially formed on a flat surface and then a regrowth is executed. Such a method is possible in the case of material of InP series. In the case of material of GaAs series, however, if the light guide layer 535 consists of AlGaAs, nucleation and growth of the cladding layer 536 and the like occur only on a portion in which the diffraction grating 545 is formed, as shown in Fig. 4. The fact results from a growth mechanism specific to LPE that a regrowth is difficult on an AlGaAs (100) surface due to effect of oxidization while a regrowth is possible on a region in which the diffraction grating 545 is formed and surfaces other than the (100) surface are exposed. Further, a crystal often needs to be regrown on a grating having a relatively coarse pitch of about 10 µm, in a semiconductor grating filter as shown in Fig. 5 (see, for example, (1) R. C. Alferness et al. , Appl. Phys. Lett., 55, 2013 (1988), and (2) Sakata et al., informal paper C-247 delivered in Vernal Grand Conference of Japan Electronics Information Communication Academy (1990)). In the case of article (1), there is no problem about a regrowth on the diffraction grating since the material is InGaAsP/InP series. Further, a degree of freedom in design is great, and current is injectable into a region with the diffraction grating. On the other hand, in the case of article (2), the material is AlGaAs/GaAs series, and a regrowth on the diffraction grating of a coarse pitch is hard to perform when a crystal surface is AlGaAs. In Figs. 5 and 6, reference numeral 640 designates a lower waveguide, reference numeral 641 designates an upper waveguide, and reference numeral 601 designates a cladding layer. If the diffraction grating of a coarse pitch is formed on the AlGaAs surface and the regrowth is executed by LPE, as described above, nucleation and growth occur as shown in Fig. 6. In Fig. 6, reference numeral 642 designates a LPE crystal layer caused by the nucleation and growth. Therefore, fabrication yield, flatness, crystal quality and the like are exceedingly bad, so that the thus fabricated device will not practically avail. This fact also results from the above-mentioned growth mechanism specific to LPE. As a result, no current is injectable into the diffraction grating region, and hence filtering or selection wavelength cannot be changed. Further, a grating cannot be formed between the two waveguides, and hence a degree of freedom in design, such as waveguide structure and coupling length, is limited. GB-A-2151402 discloses a fabrication method and an optical device according to the preamble of claim 1 and 14 correspondingly. SUMMARY OF THE INVENTION It is an object of the present invention to provide a method of producing a compound semiconductor device, which has a structure difficult to fabricate by a conventional fabrication method, by making a positive use of the above-discussed specific characteristics of epitaxy methods such as LPE, and a compound semiconductor device which has a structure that makes it possible to utilize such a fabrication method. The invention is defined in claims 1 and 14. Various embodiments of the invention are defined in the dependent claims. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a cross-sectional view of a distributed Bragg reflection (DBR) type laser device. Fig. 2 is a cross-sectional view showing an example of a semiconductor device fabricated by a conventional producing method. Figs. 3A-3F are views respectively showing steps of a conventional producing method. Fig. 4 is a cross-sectional view of a prior art device after a regrowth process. Fig. 5 is a perspective view showing a prior art semiconductor grating filter. Fig. 6 is a cross-sectional view showing a prior art regrowth method. Fig. 7 is a cross-sectional view showing a semiconductor device. Figs. 8A-8G are views respectively showing steps of an embodiment of a producing method. Fig. 9 is a cross-sectional view of another semiconductor device. Figs. 10A and 10B are graphs respectively light density distributions of a prior art distributed feedback (DFB) type laser and another laser device. Fig. 11 is a cross-sectional view of a semiconductor device. Fig. 12 is a partly cut-away perspective view of an fourth embodiment of a device according to the present invention. Fig. 13 is a cross-sectional view of of the fourth embodiment of a device. Fig. 14 is a graph showing a wavelength dependency of a coupling efficiency to an upper waveguide of the fourth embodiment of a device. Fig. 15 is a cross-sectional view of a fifth embodiment of a device according to the present invention. Fig. 16 is a perspective view of a sixth embodiment of a device according to the present invention. DESCRIPTION OF THE PREFERRED EMBODIMENT An embodiment of a fabrication method which is not part of but useful for understanding of the present invention is applied to the fabrication of a DBR laser of AlGaAs/GaAs series. As shown in Fig. 8A, an n-GaAs buffer layer (not shown) of a thickness of 0.5 µm, an n-Al x Ga 1-x As (x=0.45) cladding layer 2 of a thickness of 1.5 µm, an active layer 3, a p-Al x Ga 1-x As (x=0.4) carrier confinement layer 4 of a thickness of 400 Å, and a p-Al x Ga 1-x As (x=0.15) light guide layer 5 of a thickness of 0.25 µm are grown on an n-GaAs substrate 1 in this order, by MBE method. The active layer 3 is composed of three sets of GaAs quantum well layers (thickness is 60 Å) and Al x Ga 1-x As (x=0.2) barrier layers (thickness is 100 Å) interposed between the well layers. Outside of the three sets of well layers and barrier layers, graded index separate confinement heterostructure (GRIN-SCH) layers of a thickness of 500 Å, in which an Al mole fraction is gradually varied, are built up. Next, as shown in Fig. 8B, a resist (e.g., AZ1350J (produced by Hoechst AG) : thinner = 1:10) 8 is deposited on the light guide layer 5, and a patterning is performed by a two-beam interference exposure method, using a He-Cd laser. In Fig. 8C, a diffraction grating g 1 having a pitch of 2440 Å and a depth of 10 Å (1nm=10Å) is formed by etching using reactive ion beam etching (RIBE) method. In Fig. 8D, another patterning is performed by a resist (e.g., OMR 87 produced by Tokyo Ohka Kogyo K.K.) 9 which is different from the above resist 8 used in the two-beam interference exposure. The pattern is stripe-shaped and parallel to the diffraction grating g 1 . In Fig. 8E, resists 8 and 9 are removed after a diffraction grating g 2 having a depth of 1000 Å is formed by etching using RIBE method. As a result, the diffraction gratings g 1 and g 2 having the same pitch and different depths are formed on the entire surface of the wafer (see Fig. 8F). Then, as shown in Fig. 8G, a p-Al x Ga 1-x As (x=0.45) cladding layer 6 of a thickness of 1.5 µm and a p-GaAs contact layer 7 of a thickness of 0.5 µm are regrown on the light guide layer 5 having the diffraction gratings g 1 and g 2 , by using LPE method. Since the uneven structure for facilitating the regrowth is formed on the overall light guide layer 5 (i.e., a portion where the regrowth should be executed), the cladding layer 6 and the contact layer 7 can be readily layered with high quality. After electrodes 10, 11, 12 and 13 are formed, a DBR laser having completely flat interface and surface as shown in Fig. 7 is attained. The function of the thus fabricated device will be described. When the device is caused to function as a DBR device, laser driving current is injected into the electrodes 10 and 11 shown in Fig. 7. When current is injected into the electrode 12, the effective refractive index of the distributed reflector portion (i.e., a portion where the diffraction grating g 2 is formed) is changed and the selection reflective wavelength is varied. Hence, the oscillation wavelength of the DBR device can be altered in a range of several nanometers. At this time, in order to suppress the mode hopping, the injection current into the electrode 11 in a phase adjusting area is changed to adjust the phase. In such a driving mode, if current, which is a little smaller than the laser, oscillation threshold, is injected, incident light will be amplified in the portions of the electrodes 10 and 11 when the light's wavelength is near the laser oscillation wavelength. The area, where the electrode 12 is formed, has a capacity of wavelength selectivity and the selection wavelength is variable, so that the device can act as a tunable filter. The half width of filtering spectrum is 0.5nm the tunable width is several nanometers and the amplification factor is approximately 10dB. The structure shown in Fig. 7 can also be used as a DFB laser. If current is injected solely into the electrode 12, the area without the diffraction grating g 2 will become a light absorbing area. Thus, a laser is obtained, one end surface of which does not cause a light reflection. Therefore, even if no antireflection coating is provided, a single mode oscillation that suppresses the Fabry-Perot mode is achieved. Fig. 9 shows a tunable DBR laser which is an embodiment of a device fabricated by a producing method which is not part of the present invention. In this embodiment, an area having a shallow diffraction grating g 1 is located at a central portion, and regions having ordinary diffraction gratings g 2 are arranged on its both sides. In Fig. 9, portions having the same functions as those shown in Fig. 7 are designated by the same reference numerals. This embodiment is also fabricated by a method which is essentially the same as that illustrated in Figs. 8A-8G, with the exception that the stripe-shaped resist 9 (Fig. 8D) is located at a central portion in the fabrication method of this embodiment. The structure of this embodiment is driven in the following manner: A laser driving current is injected into a center electrode 15, and the refractive index is changed by controlling the amount of current injected into electrodes 14 and 16. Thus, the oscillation wavelength is varied. In turn, laser driving currents may be respectively injected into the electrodes 14 and 16, and the oscillation wavelength is varied by controlling a ratio between those currents. In this case, the average refractive index is changed by the currents injected into the electrodes 14 and 16, and the oscillation wavelength is thus varied. At this time, the phase is adjusted by controlling the current injected into the electrode 15. In this structure, since the phase is adjusted by the electrode 15, a stable single mode oscillation is achieved even if no λ/4 shift area is formed in the diffraction grating g 2 . As regards a producing method of the λ/4 shift area, see, for example, Japanese laid-open application No. 2-409794. Further, though a light or optical density is usually large at a central portion as shown in Fig. 10A, a light density can be made approximately uniform along a direction of reflector or resonator in this embodiment as illustrated in Fig. 10B since the coupling efficiency with the diffraction gratings g 2 near the end surfaces of the device, or diffraction efficiency, is large. As a result, so-called longitudinal hole burning effect, in which the carrier density has a hollow portion, is reduced. Thus, the laser threshold can be reduced, a high-power ouput can be obtained and a narrow spectral line width of oscillation spectrum is achieved. If current, which is a little smaller than a laser threshold, is injected, this embodiment can also function as a tunable filter. If the depth of the shallow diffraction grating g 1 is set to about 100 Å in the structure of Fig. 7 (this can be achieved by adjusting the step of Fig. 8C), such a laser that has both of characteristics of DFB and DBR can be obtained. This structure has been proposed by Arai et al. of Tokyo Technology Univ. (see, for example, J. I. Shin. et al. IEEE J. Quantum Electron., June, 1991). This structure can be readily fabricated by a method of the present invention, and a laser, that has an excellent single mode characteristic and an improved efficiency can be obtained. Fig. 11 shows an embodiment which is not part of the present invention. This embodiment has a structure which has fine and coarse diffraction gratings g 1 and g 2 beneath an active layer 23. Conventionally, it has been impossible to provide a portion with such a diffraction grating and a portion without a diffraction grating (i.e., substantially no grating) beneath the active layer 23 in devices of AlGaAs/GaAs series (see the description of Fig. 15 below). In a first growth step, cladding layer 2 and light guide layer 25 are grown on a substrate 1. After the fabrication of diffraction gratings g 1 and g 2 (this is performed substantially according to the method illustrated in Figs. 8A-8G), carrier confinement layer 24, active layer 23, cladding layer 6 and contact layer 7 are regrown. Thus, this embodiment is fabricated. In the case of such a fabrication method, a process damage to the active layer 23 at the time of fabrication of the diffraction gratings, that has been conventionally a serious problem, can be solved since the active layer 23 is grown after the fabrication of the diffraction gratings. Further, a degree of freedom in design (depth of diffraction grating, composition of active layer, etc.) can be increased. first second and third embodiments In a first embodiment, a grating or fine uneven structure in a region, where a regrowth is needed but no effective diffraction grating is needed, is shaped into such a diffraction grating that has a sufficiently short pitch so as not to attain diffraction effects for a wavelength of used light. In a second embodiment, a diffraction grating is slanted with respect to a light propagation direction in a region where the regrowth is needed while no effective diffraction grating is needed, so that no diffraction effect acts on a wavelength of used light. The slanted diffraction grating is formed so that there are many crystal orientations which facilitate regrowth. The slanted diffraction grating can be formed by forming a diffraction grating pattern of a resist 8 that has a different configuration form that shown in Figs. 8A-8G and etching the wafer with this resist pattern as a mask. In a third embodiment, a diffraction grating is formed at a position sufficiently away from a waveguide structure, in a region where a regrowth is needed while no effective diffraction grating is necessary, so that no diffraction effect acts on light propagated along the light waveguide structure of a compound semiconductor device. To achieve such a structure, after a light guide layer 5 is formed to a sufficiently large thickness, and necessary and unnecessary diffraction gratings are formed thereon (see Figs. 7 and 9), the necessary diffraction grating portion is isotropicly further etched with a protective resist 9 of the unnecessary diffraction grating used as a mask. Thus, only the necessary diffraction grating is caused to approach towards the waveguide structure. fourth embodiment A fourth embodiment of the present invention, which is directed to a semiconductor grating filter, will be described with reference to Figs. 12 and 13. Fig. 12 is a partly cut-away perspective view, and Fig. 13 is a corss-sectional view of Fig. 12. The fabrication method of the fourth embodiment will be described. By using MBE method, on an n-GaAs substrate 41, an n-GaAs buffer layer (not shown) of a thickness of 0.5 µm, an n-Al 0.5 Ga 0.5 As cladding layer 42 of a thickness of 1.5 µm, a multiple quantum well (MQW) structure layer 43 consisting of nine sets or pairs of n-GaAs well layers (thickness: 30 Å)/ Al 0.3 Ga 0.7 As barrier layers (thickness: 80 Å), an n-Al 0.5 Ga 0.5 As cladding layer 44 of a thickness of 1.0 µm, a multiple quantum well (MQW) structure layer 45 consisting of three sets or pairs of undoped GaAs well layers (thickness: 60 Å)/ Al 0.2 Ga 0.8 As barrier layers (thickness: 100 Å) and a p-Al 0.2 Ga 0.8 As light guide layer 46 of a thickness of 0.25 µm are grown in this order. Next, a coarse grating g 1 of a pitch of 10 µm (the length of a convex part is 7 µm and the length of a concave part is 3 µm) and a depth of 0.1 µm is formed on the light guide layer 46 by photolithography and RIBE method. In this coupling region, when light of a wavelength of about 830nm is caused to enter a lower waveguide, whose center is MQW layer 43, along a direction of a shown in Fig. 12, the light is completely shifted to an upper waveguide, whose center is MQW layer 45, and emitted along a direction of b , if the coupling region has a length of 500 µm. Therefore, the length of the coupling region is set to 500 µm in this embodiment. Then, a fine diffraction grating g 2 of a pitch of 200nm and a depth of 30 Å is fabricated along the same direction as that of the coarse grating g 1 . In other words, the fine diffraction grating g 2 is superposed on the coarse grating g 1 . The fine grating g 2 is formed by forming a resist pattern by a two-beam interference exposure method and etching the wafer by RIBE method. Then, a p-Al 0.5 Ga 0.5 As cladding layer 47 of a thickness of 1.5 µm and a p-GaAs contact layer 48 of a thickness of 0.5 µm are formed on the light guide layer 46 by LPE method. Due to the presence of the fine grating g 2 , a flat epitaxial crystalline growth can be executed on the entire substrate or a portion where a regrowth is needed. Then, after a SiO 2 is deposited by a magnetron sputtering method and a resist is shaped into a stripe of a width of 1.5 µm, a mesa-etching is performed down to the GaAs substrate 41 by RIBE method with the resist used as a mask. After the resist is removed, p-Al 0.5 Ga 0.5 As 50 and n-Al 0.5 Ga 0.5 As 51 are selectively regrown by LPE method, with the SiO 2 as a mask, to bury the mesa portion. After the SiO 2 is removed, an upper electrode 49 of Cr/Au is deposited. Thereafter, the substrate 41 is lapped to a thickness of 100 µm, and a lower electrode 53 of Au-Ge/Au is deposited. After alloying, the device is completed. In this embodiment, the pitch of the fine diffraction grating g 2 is set to a pitch that does not match a Bragg condition: Λ=m × λ/(2n) where m is an order of the diffraction grating, λ is a wavelength of propagated light and n is a refractive index. For example, when the wavelength of the propagated light is 830nm, the refractive index is 3.4 and the order of the grating is second, the unmatching pitch will be about 200nm since the matching pitch is equal to 244nm. The operation of this device will be described. In the grating filter, a wavelength band, that can be coupled from the lower waveguide to the upper waveguide, can be selected by the grating pitch. The device has filter characteristics whose center wavelength is 830nm and whose half width is 2.5nm, as shown in Fig. 14. Further, the filter wavelength can be continuously shifted to a shorter value by about 5nm by applying an electric field through the electrodes 49 and 53 by using a voltage source 60. Thus, the coupling efficiency to the upper waveguide can be varied. fifth embodiment A fifth embodiment of the present invention, which is directed to a grating filter, will be described with reference to Fig. 15. While the grating is located in the vicinity of the upper waveguide in the fourth embodiment, a grating is formed in the vicinity of a lower waveguide in the fifth embodiment. Such a structure has been conventionally known in devices of InGaAsP/InP series (see, e.g., the above-mentioned article (1)), but such a structure of AlGaAs/GaAs series cannot be fabricated since a regrowth on a grating of a coarse pitch is difficult in the structure of AlGaAs/GaAs series. Such a regrowth is rendered possible according to a producing method of the present invention. The advantage of the fifth embodiment, where the grating is formed around the lower waveguide, is that light coupled to the upper waveguide will not be disturbed by the grating and hence no optical loss occurs, leading to an excellent filtering efficiency. The fabrication method of the fifth embodiment will be described. By using MBE method, on an n-GaAs substrate 41, an n-GaAs buffer layer (not shown) of a thickness of 0.5 µm, an n-Al 0.5 Ga 0.5 As cladding layer 42 of a thickness of 1.5 µm, a multiple quantum well (MQW) structure layer 62 consisting of nine sets of n-GaAs well layers (thickness: 30 Å)/ Al 0.3 Ga 0.7 As barrier layers (thickness: 80 Å), and a p-Al 0.2 Ga 0.8 As light guide layer 66 of a thickness of 0.25 µm are grown in this order. Next, a grating g 1 of a pitch of 10 µm (the length of a convex part is 7 µm and the length of a concave part is 3 µm) and a depth of 0.1 µm is formed on the light guide layer 66 by photolithography and RIBE method. Then, a fine diffraction grating g 2 of a pitch of 200nm and a depth of 30 Å is fabricated along the same direction as that of the coarse grating g 1 , similarly to the fourth embodiment. Then, a p-Al 0.5 Ga 0.5 As cladding layer 63 of a thickness of 1.0 µm, a p-Al 0.2 Ga 0.8 As light guide layer 64 of a thickness of 0.1 µm, a p-Al 0.5 Ga 0.5 As cladding layer 47 of a thickness of 1.0 µm, and a p-GaAs contact layer 48 of a thickness of 0.5 µm are formed on the light guide layer 66 by LPE method. Also in this case, due to the presence of the fine grating g 2 , a flat epitaxial crystalline growth can be readily executed on the entire substrate. The fabrication process thereafter is the same as that of the fourth embodiment. Also in this embodiment, the pitch of the fine diffraction grating g 2 is set to a value that does not match a Bragg condition. sixth embodiment A sixth embodiment of the present invention, which is directed to a grating filter, will be described with reference to Fig. 16. While the fine grating g 2 for assuring the regrowth by LPE method is formed along the same direction as that of the coarse grating g 1 for achieving the function of the grating filter, in the fourth and fifth embodiments, a fine grating g 2 is formed along a direction perpenducular to the direction of the coarse grating g 1 , for further reducing light scattering due to the fine grating g 2 , in the sixth embodiment. The construction of the device and the fabrication method of the sixth embodiment are substantially the same as those of the fourth or fifth embodiment. As described in the foregoing, according to the present invention, devices such as semiconductor lasers of GaAs/AlGaAs series, which include a diffraction grating portion having a different coupling efficiency, can be readily fabricated. Thus, light sources, filters, etc., which are advantageous in tunability characteristics and high-power output characteristics and usable in fields of wavelength division multiplexing communications and measurements, can be realized. Further, when the regrowth needs to be conducted after a first growth, a regrowth can be accurately executed on a desired portion or region without fail. Further, according to the present invention, devices such as semiconductor-layered type grating filters of AlGaAs/GaAs, in which a regrowth on a processed substrate is needed, can be easily produced. Thereby, a degree of design freedom in devices of AlGaAs/GaAs is increased, and various devices having novel functions can be developed. Except as otherwise disclosed herein, the various components shown in outline or in block form in the figure are individually well-known in their internal construction and operation and are not critical either to the making or using of this invention or to a description of the best mode of the invention. While the present invention has been described with respect to what is presently considered to be the preferred embodiments, it is to be understood that the invention is not limited to the disclosed embodiments. The present invention is intended to cover various modifications and equivalent arrangements included within the scope of the appended claims.

Claims: A fabrication method of producing a compound semiconductor optical device, said method comprising the steps of: a first growth step of performing a first growth on a substrate (1) to form a wafer having an epitaxial crystal surface; an interruption step of once interrupting the first growth, said interruption step including an uneven structure forming step of forming on an epitaxial crystal surface of the wafer at least one kind of fine uneven structure (g 1 , g 2 ) containing a plurality of surfaces of crystal orientations which are respectively different from the crystal orientation of the epitaxial crystal surface of the wafer, on which a second growth is needed, which surface is formed in said first growth step; and a second growth step of performing a second growth on said fine uneven structure of the wafer, characterized in that one kind of fine uneven structure (g 1 , g 2 ) of said at least one kind of fine uneven structure is adapted to allow said second growth on top of it but has substantially no diffraction effect on all wavelengths in a range of wavelength of light to be used in this optical device. A fabrication method according to claim 1, characterized in that said at least one kind of fine uneven structure (g 1 , g 2 ) forming step forms a plurality of kinds of different fine uneven structures (g 1 , g 2 ) on the epitaxial crystal surface of the wafer formed in said first growth step. A fabrication method according to any of claims 1 and 2, characterized in that said at least one kind of fine uneven structure (g 1 , g 2 ) facilitates the second growth. A fabrication method according to any of claims 1 to 3, characterized in that said at least one kind of fine uneven structure (g 1 , g 2 ) comprises a plurality of diffraction gratings (g 1 , g 2 ) of predetermined pitches. A fabrication method according to any of claims 1 to 4, characterized in that said one kind of fine uneven structure (g 1 , g 2 ) comprises a sufficiently shallow uneven structure (g 1 , g 2 ) so that said one kind of fine uneven structure has no diffraction effect on all wavelengths in a range of light to be used in this optical device. A fabrication method according to any of claims 1 to 5, characterized in that said one kind of fine uneven structure (g 1 , g 2 ) comprises a diffraction grating (g 1 , g 2 ) which has a sufficiently short pitch so that said one kind of fine uneven structure has no diffraction effect on all wavelengths in a range of light to be used in this optical device. A fabrication method according to any of claims 1 to 6, characterized in that said one kind of fine uneven structure (g 1 , g 2 ) comprises a diffraction grating (g 1 , g 2 ) which is slanted with respect to a light propagation direction of light propagated in the wafer so that said one kind of fine uneven structure has no diffraction effect on all wavelengths in a range of light to be used in this optical device. A fabrication method according to any of claims 1 to 7, characterized in that said one kind of fine uneven structure (g 1 ) is formed sufficiently away from a light waveguide structure so that said one kind of fine uneven structure (g 1 ) has no diffraction effect on all wavelengths in a range of light to be used in this optical device. A fabrication method according to any of claims 1 to 8, characterized in that said one kind of fine uneven structure (g 1 , g 2 ) has a sinusoidal shape so that said one kind of fine uneven structure (g 1 , g 2 ) has little diffraction effect on all wavelengths in a range of light to be used in this optical device. A fabrication method according to any of claims 1 to 9, characterized in that the epitaxial crystal surface formed in said first growth step comprises Al x Ga 1-x As where 0<x<1 or x=1. A fabrication method according to any of claims 1 to 10, characterized in that said first growth step comprises a step of forming an active layer (3), and said at least one kind of fine uneven structure (g 1 , g 2 ) is formed on the epitaxial crystal surface formed on the active layer. A fabrication method according to any of claims 1 to 10, characterized in that said second growth step comprises a step of forming an active layer (23). A fabrication method according to claim 2, characterized in that said one kind of fine uneven structure (g 2 ) and said other kind of fine uneven structure (g 1 ) are superposed on each other. A compound semiconductor optical device comprising: a semiconductor substrate (1; 41); a first epitaxial-layer structure (2, 3, 4, 5; 25; 42, 43, 44, 45, 46; 62, 66) formed on said substrate, said first epitaxial-layer structure having an epitaxial crystal surface; at least one kind of fine uneven structure (g 1 , g 2 ) containing a plurality of surfaces of crystal orientations which are respectively different from the crystal orientation of said epitaxial crystal surface formed on the entire epitaxial crystal surface of said first epitaxial-layer structure; and a second epitaxial-layer structure (6, 7; 24, 23; 47, 48; 63, 64) formed on said fine uneven structure, characterized in that one kind of fine uneven structure (g 1 , g 2 ) of said at least one kind of fine uneven structure is adapted to allow growth of another layer on top of it, but has substantially no diffraction effect on all wavelengths in a range of wavelength of light to be used in this optical device. A compound semiconductor optical device according to claim 14, characterized in that said at least one kind of fine uneven structure (g 1 , g 2 ) comprises a plurality of kinds of different fine uneven structures (g 1 , g 2 ) formed on the entire epitaxial crystal surface of said first epitaxial-layer structure. A compound semiconductor optical device according to any of claims 14 to 16, characterized in that said at least one kind of fine uneven structure (g 1 , g 2 ) comprises a plurality of diffraction gratings (g 1 , g 2 ) of predetermined pitches. A compound semiconductor optical device according to any of claims 14 to 17, characterized in that said one kind of fine uneven structure (g 1 , g 2 ) comprises a sufficiently uneven structure (g 1 , g 2 ) so that said one kind of fine uneven structure has no diffraction effect on all wavelengths in a range of light to be used in this optical device. A compound semiconductor optical device according to any of claims 14 to 18, characterized in that said one kind of fine uneven structure (g 1 , g 2 ) comprises a diffraction grating (g 1 , g 2 ) which has a sufficiently short pitch so that said one kind of fine uneven structure has no diffraction effect on all wavelengths in a range of light to be used in this optical device. A compound semiconductor optical device according to any of claims 14 to 19, characterized in that said one kind of fine uneven structure (g 1 , g 2 ) comprises a diffraction grating (g 1 , g 2 ) which is slanted with respect to a light propagation direction of light propagated in the wafer so that said one kind of fine uneven structure has no diffraction effect on all wavelengths in a range of light to be used in this optical device. A compound semiconductor optical device according to any of claims 14 to 20, characterized in that said one kind of fine uneven structure (g 1 ) is formed sufficiently away from a light waveguide structure so that said one kind of fine uneven structure (g 1 ) has no diffraction effect on all wavelengths in a range of light to be used in this optical device. A compound semiconductor optical device according to any of claims 14 to 21, characterized in that said one kind of fine uneven structure (g 1 , g 2 ) has a sinusoidal shape so that said one kind of fine uneven structure (g 1 , g 2 ) has little diffraction effect on all wavelengths in a range of light to be used in this optical device. A compound semiconductor optical device according to any of claims 14 to 22, characterized in that the epitaxial crystal surface of said first epitaxial-layer structure comprises Al x Ga 1-x As where 0<x<1 or x=1. A compound semiconductor optical device according to any of claims 14 to 23, further comprising an active layer (3) in said first epitaxial-layer structure. A compound semiconductor optical device according to any of claims 14 to 23, further comprising an active layer (23) in said second epitaxial-layer structure. A compound semiconductor optical device according to claim 15, characterized in that said one kind of fine uneven structure (g 2 ) and said other kind of fine uneven structure (g 1 ) are superposed on each other. A compound semiconductor optical device according to any of claims 24 and 25, characterized in that said at least one kind of fine uneven structure further comprises a diffraction grating (g 1 ) of predetermined pitch and said diffraction grating (g 1 ) is a distributed feedback-type reflector. A compound semiconductor optical device according to claim 27, further comprising an electrode means for independently controlling currents injected into said diffraction grating. A compound semiconductor optical device according to any of claims 24 and 25, characterized in that said at least one kind of fine uneven structure (g 1 , g 2 ) further comprises a diffraction grating (g 2 ) of predetermined pitch, and said diffraction grating (g 2 ) is a distributed Bragg reflection type reflector. A compound semiconductor optical device according to claim 29, further comprising an electrode means (12) for independently controlling currents injected into said diffraction grating. A compound semiconductor optical device according to any of claims 14 to 26, further comprising a plurality of light waveguides (43, 45), and wherein said at least one kind of fine uneven structure further comprises a diffraction grating (g 1 ) for optically coupling one of said waveguides (43) and the other of said waveguides (45). A compound semiconductor optical device according to claim 31, characterized in that the pitch of said diffraction grating (g 1 ) is more than ten times the wavelength of a propagated light. A compound semiconductor optical device according to claim 31, further comprising an electrode means (49, 53) for changing a coupling wavelength between said one of said waveguides and the other of said waveguides.

Inventors: OHGURI NORIAKI, OUCHI TOSHIHIKO, SAKATA HAJIME, UCHIDA MAMORU, OHGURI, NORIAKI, OUCHI, TOSHIHIKO, SAKATA, HAJIME, UCHIDA, MAMORU, Ohguri, Noriaki, c/o Canon Kabushiki Kaisha, OUCHI, TOSHIHIKO, C/O CANON KABUSHIKI KAISHA, Sakata, Hajime, c/o Canon Kabushiki Kaisha, UCHIDA, MAMORU, C/O CANON KABUSHIKI KAISHA
Applicants: CANON KK, CANON KABUSHIKI KAISHA
Application year: 1993
Main classification: H01S5
IPC codes: H01S5, H01L33