Transistor, amplifier comprising said transistor and method of making said transistor

Abstract: A bipolar transistor is provided in which the base-emitter junctions do not traverse the base but terminate inside the top surface of the base. The transistor has long emitter perimeter available for current flow and more than two emitter sides ( e.g. , three sides) available for current flow, which allows obtaining a low base resistance, a low emitter resistance, a low collector resistance, a low base-collector capacitance, and a small size.

Description: BACKGROUND OF THE INVENTION The present invention relates to electronic devices, and more particularly to bipolar transistors. Bipolar transistors are widely used in both digital and analog circuits including computer processors, memories, power supplies, and others. Bipolar transistors are utilized for signal amplification, switching, bias generation, and for other purposes. While bipolar transistors are generally larger and less power efficient than their MOS counterparts, bipolar transistors are typically faster, and consequently bipolar transistors are widely used in fast memories, fast logic arrays, and many other super fast products for data- and telecommunications. Typical goals in a bipolar transistor design include a low transistor-generated noise, a high current and power gain (which allow low-power operation), and a high frequency range (which permits a high speed). Another goal is good matching of the electrical characteristics of similar transistors, and in particular good VBE matching measured as the difference between the base-emitter voltages at equal collector currents. VBE matching is particularly important for monolithic circuit design which relies on similar transistors having similar electrical characteristics. These goals are advanced by reducing the transistor base resistance, the emitter resistance, the collector resistance, and the base-collector capacitance. The base resistance, in particular, is a major contributor to transistor-generated noise. Moreover, the base resistance decreases the frequency range of the transistor as the transistor unity-power-gain frequency f max is inversely proportional to the base resistance. See, G. Gonzales, Microwave Transistor Amplifiers (Prentice-Hall, 1984), page 33. The emitter and collector resistances also contribute to noise and, further, they reduce the current gain and the power gain. In addition, the emitter resistance makes good VBE matching more difficult to obtain, particularly at high transistor currents. Further, the emitter and collector resistances and the base-collector capacitance decrease the transistor frequency range as they reduce both f max and the unity-current-gain frequency f T . Thus, reducing the base, emitter and collector resistances and the base-collector capacitance are important goals in transistor design. Another goal is a small size which is needed to obtain a high packing density in the integrated circuit. In addition, reducing the base size decreases the base-collector capacitance. Fig. 1 shows in plan view a prior art transistor 110 having three emitters 120-1, 120-2, 120-3 extending across the underlying base 130. The collector (not shown) underlies the base and electrically contacts the collector contact regions 140-1, 140-2. Emitter contact region 150 interconnects the emitters. Base contact region 160 made from doped polysilicon overlying the base surrounds the emitters and extends between the emitters. Contact openings 164-1 through 164-6, 170-1 through 170-8, 180-1 through 180-6 in an insulating layer overlying the transistor allow the emitters, the base and the collector to be contacted by conductive layers overlying the insulating layer. The emitters 120-i are made narrow, i.e. , the emitter width WE is made small, in order to reduce the intrinsic base resistance RBI, i.e. the resistance to base current of the base portions underlying the emitters. Of note, the base portions underlying the emitters (the 'intrinsic base') are typically thinner in the vertical cross section and they are typically lighter-doped than the remaining ('extrinisic') base portion, and hence the intrinsic base resistance is a significant component of the total base resistance. The number of the emitters -- three -- is chosen to obtain a desired base-emitter junction area in accordance with the desired emitter current. Emitter contact openings 164-1 are positioned away from the emitters not to restrict the emitter width -- the contact openings are typically made wider than the emitters to obtain a low contact resistance in the openings. Base contact region portions 160-1, 160-2 extend between emitters 120-i to reduce the base resistance. Reducing the base, emitter and collector resistances and providing a small size and a low base-collector capacitance are often conflicting goals requiring careful balancing. For example, making the emitters narrow reduces the base resistance but increases the emitter resistance. The base size becomes also increased as more emitters are needed to achieve the desired base-emitter area. Base contact region portions 160-1, 160-2 which extend between the emitters reduce the base resistance but increase the base size. Increased base size leads to a higher base-collector capacitance. The base and collector resistances can be reduced by increasing the base and collector width in the direction along the emitters, but the base size, the base-collector capacitance and the emitter resistance will suffer. Thus, there is a need for a transistor which simultaneously provides low base, emitter and collector resistances, a small base size, a small overall size, and a low base-collector capacitance. European Patent specification EP-0194832 discloses a single emitter structure transistor in which the emitter has a wide portion overlapping the edge of the base to reduce emitter resistance and, narrow portion that extends further over the base and terminates within the base top surface, to increase emitter perimeter. SUMMARY OF THE INVENTION According to the invention there is provided a transistor as set out in claim 1. An amplifier comprising said transistor is disclosed in claim 10 and a method of making said transistor is disclosed in claim 11. Specific embodiments are disclosed in the dependent claims. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a plan view of a prior art transistor. Fig. 2 is a plan view of a transistor according to the present invention. Figs. 3 and 4 show vertical cross sections of the transistor of Fig. 2. Fig. 5 shows a vertical cross section of a portion of the transistor of Fig. 2, and Fig. 5 illustrates base current paths coming from one emitter side in the transistor of Fig. 2. Fig. 6 shows a transistor for explaining the present invention. Figs. 7-8 are plan views of transistors according to the present invention. Fig. 9 shows a vertical cross section of the transistor of Fig. 8. Figs. 10 and 11 are plan views of transistors according to the present invention. Fig. 12 is a circuit diagram of an amplifier comprising a transistor of the present invention. Fig. 13 is a plan view of a transistor according to the present invention. Fig. 14 is a circuit diagram of a modulator using transistors of the present invention. Fig. 15 is a circuit diagram of a divide-by-2 circuit using transistors of the present invention. DESCRIPTION OF THE PREFERRED EMBODIMENTS Figs. 2-4 illustrate a transistor 210 in which the base-emitter junctions of emitters 120-1 through 120-10 do not extend across base 130 but terminate inside base 130. While transistor 210 is an npn transistor, similar pnp transistors are obtained by reversing the conductivity types in transistor 210. As illustrated in Figs. 3 and 4, emitters 120-i are formed from portions of polysilicon layer 220, from refractory metal silicide (e.g., titanium silicide) 230 overlying the polysilicon portions, and from n+ regions 240 of a monocrystalline silicon layer 250 which is grown epitaxially on p-doped monocrystalline silicon substrate 260. Emitter contact region 150-1 (Figs. 2, 4) formed from polysilicon 220 and from the overlying metal silicide 230 interconnects emitters 120-1 through 120-5 and extends away from base 130. Similar emitter contact region 150-2 interconnects emitters 120-6 through 120-10 and extends away from the base. Emitter contact openings 164-1 through 164-6 in the overlying insulator 270 terminate on respective emitter contact regions 150-i rather than on emitters 120-i so as not to restrict the emitter size. In one embodiment, each contact opening 164-i is in plan view a square 1.0 x 1.0 µm and each emitter 120-i is a square 0.8 x 0.8 µm. Base 130 includes a p-doped region 280 (Figs. 3, 4) in the epitaxial layer 250, and base 130 also includes portions of metal silicide layer 230 which overlie p doped region 280 away from the emitters. Silicon dioxide spacers 300 (not shown in Fig. 2 but shown in Figs. 3, 4) which are formed on polysilicon sidewalls of emitters 120-i isolate the emitters from the base portions of the metal silicide. Base 130 and n- collector 310 underlying the base are surrounded by field oxide regions 320 isolating the base and the collector from the rest of the integrated circuit. N+ buried layer 330 underlies collector 310 and the surrounding field oxide regions and provides a low resistance path from the collector to n+ sinker regions 340-1, 340-2 (Fig. 4) which contact the respective collector contact regions 140-1, 140-2. Field oxide 320 surrounds the transistor and extends through the transistor outside the base/collector region and the sinker regions. Collector contact regions 140-1, 140-2 (Figs. 2, 4) are formed from n+ portions of polysilicon layer 220 and from the overlying metal silicide 230. Base contact regions 160-1, 160-2 are formed from p+ portions of layer 220 and from the overlying metal silicide 230. Base contact openings 170-1, 170-2 in insulator 270 terminate at respective base contact regions 160-1, 160-2. Collector contact openings 180-1 through 180-6 terminate at the collector contact regions. Conductive ( e.g. , metal) lines formed from layer or layers 350 (Fig. 4) contact the base, emitter and collector contact regions through the respective contact openings. These lines and, perhaps, overlying conductive lines (not shown) include lines interconnecting the two emitter contact regions 150-i, lines interconnecting the two base contact regions 160-i, and lines interconnecting the two collector contact regions 140-i. As shown in Fig. 2, the top surface of base 130 is a rectangle. The top surface is more generally a polygon, or it may be of another shape. The boundary of the top surface is shown at 130B in Fig. 2, and the four sides of the boundary are shown respectively at 130B-1 through 130B-4. The base-emitter junction of each emitter 120-i is a rectangle which extends from the respective side 130B-1 or 130B-3 inside the top surface of the base and terminates inside the top surface, i.e., away from the top surface boundary 130B. Other shapes for the base-emitter junctions are possible. To reduce the intrinsic base resistance, the emitter width WE (marked for emitter 120-4 in Fig. 2) is chosen in some embodiments as the minimal width obtainable by the masking process by which the polysilicon layer 220 is patterned. In one embodiment, WE is 0.8 µm, the length LE of each emitter is also 0.8 µm, the base length LB measured as the distance between sides 130B-2 and 130B-4 is 10.2 µm, and the base width WB measured as the distance between sides 130B-1 and 130B-3 is 2.8 µm. Transistor 210 has a low base resistance because transistor 210 has, for given emitter area and emitter width, a long three-sided emitter perimeter available for base current flow. For example, emitter 120-2 has three sides 120S.1, 120S.2, 120S.3 through which and under which the base current flows into the emitter, as compared to two sides in the prior art transistor 110 of Fig. 1. The base current paths in transistor 210 extend from under the three sides 120S.1, 120S.2, 120S.3 laterally away from the base-emitter junction. If, for example, the emitter length and width are each 0.8 µm, then the perimeter portion available for base current flow is 0.8 * 3 = 2.4 µm for each emitter, 2.4 * 10 = 24 µm total for the ten emitters. By contrast, in the transistor 110 of Fig. 1, each emitter 120-i has only two sides available for current flow, and the total emitter perimeter available for current flow is only 16 µm for the same emitter width of 0.8 µm and the same emitter area of 0.8 * 0.8 * 10 = 6.4 µm 2 . Thus the emitter perimeter available for current flow is 50% higher in transistor 210. The increased emitter perimeter available for current flow causes a significant reduction in both the extrinsic and the intrinsic base resistances by providing additional base current paths. More particularly, the extrinsic base resistance (RBX) includes the following two major components each of which is reduced due to the increased emitter perimeter available for current flow: (1) the resistance of the p doped base portion around the emitter perimeter; and (2) the contact resistance between the p doped portion and the overlying metal silicide 230. The intrinsic base resistance (RBI) is reduced because additional base current paths are provided in the intrinsic base under the emitter perimeter. In particular, some portions of the intrinsic base become closer to the emitter perimeter. Moreover, as illustrated by Fig. 5, an additional region is provided for those current paths which, like current path 510 in Fig. 5, enter the emitter near the emitter perimeter and which thus travel but a short distance through the intrinsic base. The additional region near the perimeter has a low resistance. More particularly, current path 510 has a lower resistance than current path 520 entering the emitter farther from the perimeter, because current path 510 has a smaller length in the high resistivity intrinsic base. The resistivity of the intrinsic base is 14KΩ per square in one embodiment. Other resistivity values are used in other embodiments. Thus, increasing the emitter perimeter available for current flow leads to a reduction of the intrinsic base resistance. The base resistance is reduced also because the perimeter of each emitter 120-i has three sides available for current flow rather than two sides as in the prior art Fig. 1 and because, therefore, the base current paths spread laterally from the emitter in three different directions orthogonal to the perimeter. Moreover, the additional side allows increasing the emitter perimeter per the same emitter area. The low base resistance leads to a low transistor-generated noise and a high frequency range as explained above. Further, the low base resistance capability allows one to meet the noise and frequency range requirements for a given application at a reduced base width, which in turn allows a higher packing density and a lower base-collector capacitance. The collector resistance of transistor 210 is low because additional collector current paths are provided under the additional emitter perimeter and because the three emitter sides available for current flow allow the collector current paths to spread laterally in three different directions. The low collector resistance permits achieving a high transistor frequency range, a high current gain, a high power gain and a low transistor-generated noise, as explained above. The emitter resistance is low in some embodiments because each emitter 120-i in these embodiments is short and hence each emitter is close to the respective emitter contact region 150-1 or 150-2. Moreover, transistor 210 has ten emitters connected in parallel, so that the total resistance of the silicide portion of the emitters is only 1/10 of the resistance of the silicide portion of a single emitter. A low emitter resistance permits achieving a high current drive, a high power gain, good VBE matching, and a low transistor-generated noise, as explained above. The base size and the overall size of transistor 210 are reduced in some embodiments because of the elimination of base contact region portions between the emitters -- cf . base contact region portions 160-1, 160-2 in the prior 5 art Fig. 1. The base contact regions in transistor 210 need not extend between the emitters because the base regions between the emitters are connected to base contact regions 160-1, 160-2 by low-resistivity metal silicide 230. (In one embodiment, metal silicide 230 is titanium silicide having resistivity of 2 Ω per square.) A small base size permits achieving a low base-collector capacitance, a high frequency range, and a high packing density, as explained above. Transistor 210 is fabricated in some embodiments using one of the processes described in the following documents: EP-A-0 452 720; EP-A-0 450 500; and the article by A. Iranmanesh et al., Total System Solution with Advanced BiCMOS , Solid State Technology, July 1992, pages 37-40. In one embodiment, for example, transistor 210 is fabricated as follows. A mask is formed on p substrate 260 to define buried layer 330. The boundary of the mask opening defining the buried layer is shown at 330M in Fig. 2. The n dopant implanted through the mask opening outdiffuses in subsequent processing steps to the boundary 330B defining the final position of the buried layer. N- epitaxial layer 250 is then grown on the substrate, and field oxide regions 320 are formed in the epitaxial layer. The n+ buried layer extends partially into the epitaxial layer due to dopant outdiffusion. An n dopant is implanted into the sinker regions 340-i. Then polysilicon layer 220 is deposited and doped by a p dopant. The p dopant diffuses into the epitaxial layer 250 and converts the region 280 of the epitaxial layer to the p conductivity type. Additional p and n dopants are selectively introduced into the polysilicon layer so that the polysilicon becomes doped n+ at the location of emitters 120-i and at the location of emitter contact regions 150-i and collector contact regions 140-i, and the polysilicon becomes doped p+ at the location of base contact regions 160-i. Polysilicon layer 220 is then masked and etched to define emitters 120-i, emitter contact regions 150-i, base contact regions 160-i, and collector contact regions 140-i. The polysilicon masking step is tolerant to mask misalignment because if the mask is shifted in the direction shown at 530 in Fig. 2 or in the opposite direction, the emitter area and the emitter perimeter available for current flow remain unchanged. For example, if the mask is shifted in direction 530, the area of emitters 120-6 through 120-10 increases by the same amount by which the area of emitters 120-1 through 120-5 decreases, and the perimeter available for current flow in emitters 120-6 through 120-10 increases by the same amount by which the perimeter available for current flow in emitters 120-1 through 120-5 decreases. The dopants from polysilicon layer 220 are diffused into epitaxial layer 250 to form n+ emitter regions 240 and to increase the p dopant concentration in the base portion near base contact regions 160-i. The overetch of polysilicon layer 220 is controlled to be greater than the depth of emitter regions 240 in order to reduce the emitter-base capacitance. In one embodiment, the depth of regions 240 is about 50 nm (500 Å) while the polysilicon is overetched by about 120 nm (1200 Å) from the surface of epitaxial layer 250. Additional p dopant is introduced into the extrinsic base. Oxide spacers 300 are formed around the emitters. Metal silicide 230, oxide 270, contact openings 164-i, 170-i and 180-i, and metal layer or layers 350 are then formed as described, for example, in the aforementioned EP-A-0 450 500. Fig. 6 shows transistor 610 having emitter 120 which terminates inside base 130, for explaining the present invention. Such a design allows fabrication of transistors with a smaller emitter area and a smaller overall area than could be fabricated if the emitter were required to extend completely across base region 130. Emitter contact region 150, base contact region 160, buried layer 330, collector contact region 140, and contact openings 164, 170, 180 are similar to those of transistor 210. Some embodiments of transistor 610 are particularly suitable for small size, low power, high speed applications. Fig. 7 shows transistor 710 having four emitters 120-1 through 120-4 which terminate inside base 130. Emitter contact regions 150-1, 150-2, base contact region 160, buried layer 330, collector contact region 140, and contact openings 164-1, 164-2, 170, 180 are similar to those of transistor 210. Figs. 8 and 9 illustrate transistor 810 having three base regions 130-1, 130-2, 130-3 separated from each other by field oxide regions 320. Collectors 310-1, 310-2, 310-3 (Fig. 9) separated by the same field oxide regions underlie the respective base regions. Ten emitters 120 overlie each base region 130-i and terminate inside the base region. The emitters overlying each base region are connected, in groups of five, to respective emitter contact regions 150-i. Contact region 150-2 is shared between five emitters overlying the base region 130-1 and five emitters overlying the base region 130-2. Contact region 150-3 is shared between five emitters overlying the base region 130-2 and five emitters overlying the base region 130-3. Buried layer 330 extends under collectors 310-i and the surrounding field oxide regions 320 to sinker regions 340-1, 340-2 which contact the respective collector contact regions 140-1, 140-2. Base contact regions 160-i,1, 160-i,2 contact the respective base region 130-i (i=1, 2, 3). An insulator (not shown) similar to insulator 270 of Figs. 3, 4 overlies the transistor. The contact openings in the insulator are located as shown in Figs. 8 and 9. A conductive layer or layers (not shown) similar to layer or layers 350 of Fig. 4 contact the base contact regions, the emitter contact regions and the collector contact regions through the respective contact openings. The conductive layer or layers and, perhaps, overlying layers provide lines interconnecting the emitter contact regions 150-i, lines interconnecting the base contact regions 160-i,j, and lines interconnecting collector contact regions 140-i. Transistor 1010 of Fig. 10 has three identical base/emitter structures 1020-1, 1020-2, 1030-3. For simplicity, only structure 1020-2 is shown in detail. Each structure 1020-i includes base regions and emitter regions. Each structure 1020-i is similar to the base/emitter structure of transistor 810 (Figs. 8, 9) though each structure 1020-i has four, rather than three, base regions 130-i. Collector contact regions 140-i in Fig. 10 run along the base contact regions on two sides of each structure 1020-i. The buried layer (not shown) underlies the base, emitter, and collector regions, and the buried layer contacts the collector contact regions 140-i through the respective sinkers (not shown). Field oxide (not shown) surrounds the transistor and extends through the transistor outside the base/collector regions and the sinkers as in transistor 210. Fig. 11 shows transistor 1110 in which each base-emitter junction extends inside base 130 by more than half the base width. Emitter contact regions 150-i, base contact regions 160-i, and contact openings 164-i, 170-i are similar to those in transistor 210. One or more collector contact regions (not shown) are provided adjacent the base/emitter structure of transistor 1110. The buried layer (not shown) is similar to that of transistor 210. Fig. 13 shows transistor 1310 in which the emitters 120-1 through 120-3 on one side of the base are shifted in the horizontal direction along the base length with respect to the emitters 120-4 through 120-6 on the other side of the base. The base contact regions 160-i are shifted counter clockwise along the edges of base 130. The emitter contact regions 150-i and the collector contact regions 140-i are similar to those of transistor 210. Fig. 14 shows a circuit diagram of a modulator that multiplies the differential voltage on inputs LOP, LON by the differential current on inputs IMODP, IMODN and provides the resulting differential current on inputs IFPOS, IFNEG. Transistors Q64, Q66 and transistors Q62, Q60 are, respectively, two current mirrors which take input currents from respective inputs IMODP, IMODN and supply scaled currents to the emitters of the respective differential pairs formed, respectively, by transistors Q5, Q6 and by transistors Q7, Q8. The differential voltage on inputs LOP, LON (that is, the voltage on input LOP minus the voltage on input LON) is amplified by transistors Q13, Q14 and is applied to the bases of the respective differential pairs via emitter followers Q9, Q10. All the transistors in Fig. 14 are npn transistors with three-sided emitters of the type described above with respect to Figs. 2-11 and 13. The three-sided emitter transistors improve the VBE matching, the speed and the noise level. Fig. 15 shows a circuit diagram of a divide-by-2 circuit that divides by 2 the differential clock signal on inputs CP, CN and provides four clock signals on the respective outputs Q000, Q180, Q090, Q270 with the frequency equal to one half the frequency of the differential clock signal and with the phase relationships, respectively, 0°, 90°, 180°, and 270° with respect to the differential clock signal. The circuit of Fig. 15 uses Common-Mode-Logic (CML) latches configured as a T-flip-flop. All the transistors in Fig. 15 are npn transistors with three-sided emitters such as described above in connection with Figs. 2-11 and 13. Transistors 610, 710, 810, 1010, 1110 and 1310 may be fabricated by the processes described above in connection with transistor 210. Transistors 210, 610, 710, 810, 1010, 1110 and 1310, and similar transistors, are suitable for a wide variety of digital and analog integrated circuits. An example of one such circuit -- a low noise amplifier 1210 -- is shown in Fig. 12. Input IN of the amplifier is connected to the base of npn transistor 1250. The emitter of transistor 1250 is connected to ground, and the collector is connected to the amplifier output OUT. Output OUT is connected to the base of npn transistor 1260 whose collector is connected to voltage supply VCC. Resistors 1270, 1280 connect input IN, respectively, to ground and to the emitter of transistor 1260. Resistor 1290 connects output OUT to voltage supply VCC. Transistor 1250 is a low noise transistor having the structure of a transistor in accordance with the present invention, for instance as described above in connection with Figs. 2-11. Transistor 1260 may also have the structure of a transistor in accordance with the present invention, for instance as described above in connection with Figs. 2-11. While the invention has been illustrated with respect to the embodiments described above, other embodiments and variations not described herein are within the scope of the invention as defined by the appended claims. In particular, the invention includes pnp transistors obtained by reversing the conductivity types in the npn transistors. Further, the invention is not limited by the particular materials. For example, polysilicon 220 and metal silicide 230 are replaced by, or used in conjunction with, other materials in some embodiments. The invention covers non-silicon devices including, for example, germanium and gallium arsenide devices. The invention is not limited by the crystal structure of the materials or by the particular sizes of the base, emitter, and other regions.

Claims: A transistor (210) comprising: a collector region (310) of a first conductivity type; a base region (130) of a second conductivity type having a top surface and overlying and in direct contact with the collector region; a plurality of emitter regions (120) of the first conductivity type overlying and in direct contact with the base region and forming base-emitter junctions therewith, each emitter region extending from a boundary of the top surface of the base, terminating within the base top surface and interconnecting with adjacent emitter regions of said plurality via emitter contact regions (150) extending away from the base region, and in which the portions of the base region located between the emitter regions are interconnected by a metal containing conductive region (230) in direct contact with said portions and isolated from the emitter regions. A transistor according to claim 1 further including a base contact region (160) which comprises an upper layer of the same material as the conductive region (230) and does not extend between the emitter regions. A transistor according to any preceding claim in which the plurality of emitter regions comprises a first group of emitter regions interconnected via a first emitter contact region (150-1), the transistor further including a second group of emitter regions interconnected via a respective second emitter contact region (150-2). A transistor according to claim 3 comprising a plurality of base regions separated by field oxide regions (320), each base region being provided with first and second groups of emitter regions, and in which groups of emitter regions from separate ones of the base regions share a common emitter contact region (150). A transistor according to any preceding claim in which a base contact region (160) is in direct contact with the top surface of the or each base region and comprises an upper layer of the same material as the metal containing conductive region, said base contact region not extending between the emitter regions. A transistor according to any preceding claim in which first and second groups of emitter regions of said plurality each comprise a region formed from a respective portion of a conductive layer (220) such that if, due to a mask misalignment occuring during fabrication of said portions of the conductive layer, said portions are shifted in a direction relative to the base region, an area of base-emitter junction under one of the groups of emitter regions increases by the same amount as the other decreases. A transistor according to any preceding claim in which each emitter region comprises a first portion (240) formed in the or a base region and a second portion (220) in direct contact with the first portion (240). A transistor according to any preceding claim in which the or each base region is elongate and each emitter region extend from a longer boundary of the or a base region and a base contact overlies a shorter boundary of the or each base region. A transistor according to any preceding claim in which the emitter regions comprise an upper layer of the same material as the conductive region (230). An amplifier comprising a transistor according to any preceding claim as a first transistor (1250), said amplifier further comprising: an input terminal; means for connecting each base region of said first transistor to said input terminal; means for connecting the emitter regions of said first transistor to a reference voltage; an output terminal; means for connecting the collector region of said first transistor to said output terminal; means for connecting said output terminal to a power supply; a second transistor (1260) having an emitter region, a base region and a collector region; means for connecting said emitter region of said second transistor to said base region of said first transistor; means for connecting said base region of said second transistor to said output terminal; and means for connecting said collector region of said second transistor to said power supply. A method of making a transistor according to any one of claims 1 to 9, said method comprising the steps of: forming a collector region (310) of a first conductivity type; forming a base region (130) over and in contact with said first region, said base region having a second conductivity type opposite said first conductivity type, said base region having a top surface, said top surface having a boundary; forming a layer of material (220) over and in direct contact with said base region; forming a mask over a portion of said layer of material which portion has said first conductivity type, said portion forming a junction with said top surface which junction extends from said boundary of said top surface and terminates within said top surface ; and removing a portion of said layer of material which portion is exposed by said mask, so as to expose said top surface around said junction.

Inventors: BIEN DAVID EDWARD, GRUBISICH MICHAEL JOHN, IRANMANESH ALI A, BIEN, DAVID EDWARD, GRUBISICH, MICHAEL JOHN, IRANMANESH, ALI A.
Applicants: NAT SEMICONDUCTOR CORP, NATIONAL SEMICONDUCTOR CORPORATION
Application year: 1993
Main classification: H01L29
IPC codes: H03K17, H01L29, H01L21, H03K3