Semiconductor device applicable for liquid crystal display device, and process for its fabrication

Abstract: A semiconductor device comprises a substrate (100) comprising a semiconductor monocrystalline substrate on one principal surface side of which a light-transmitting film is formed, the substrate being prepared by removing from the other principal surface side thereof a semiconductor monocrystalline region (2) present right beneath the light-transmitting film, a non-monocrystalline semiconductor element (4) formed on the light-transmitting film, and a monocrystalline semiconductor element (3) formed in a semiconductor monocrystalline region (1) remaining in the substrate, the non-monocrystalline semiconductor element and the monocrystalline semiconductor element being electrically connected.

Description: This invention relates to a semiconductor device, a semiconductor device applicable for a liquid crystal display device, and a process for fabricating the semiconductor device. More particularly, the present invention relates to a semiconductor device applicable for a liquid crystal display device, comprising a non-monocrystalline semiconductor element and a monocrystalline semiconductor element which are provided on the same substrate, and a process for fabricating such a semiconductor device. Liquid crystal display devices provided with active matrix elements have been hitherto made commercially available as flat panel display devices or projection televisions. Fig. 17 schematically illustrates the construction of a drive circuit for active matrix type liquid crystal display elements that has been conventionally used. In Fig. 17, reference numeral 301 denotes a picture element switch; 305, a liquid crystal picture element; 306, a transparent substrate; 302, a buffer portion; 303, a horizontal shift register; and 304, a vertical shift register. Luminance signals and sound signals of televisions are compressed in a certain band and are transferred to the buffer portion 302 that is driven by the horizontal shift register 303 having a driving capacity enough to be able to follow up the frequencies of the band. Next, the signals are transferred to the liquid crystal in the period in which the picture element switch 301 is kept "ON" by the vertical shift register 304. Performance required for each circuit should be considered here. Assume that, taking account of high-grade televisions, they operate at a frame frequency of 60 Hz, a scanning line number of about 1,000 lines, a horizontal scanning period of about 30 µsec (effective scanning period: 27 µsec) and a horizontal picture element number of abut 1,500 elements, the television signals are transferred to the buffer at a frequency of about 45 MHz. Hence, each circuit is required to have the following performance: (1) The horizontal shift register can drive at 45 MHz or above (i.e., driving capacity); (2) the vertical shift register can drive at 500 kHz or above; (3) a transfer switch that is driven by the horizontal shift register and transfers television signals to the buffer can drive at 45 MHz or above; and (4) the picture element switch can drive at 500 kHz or above. What is meant by the driving capacity herein referred to is that, when a liquid crystal picture element is made to have a certain gradation number N, a voltage not lower than the following voltage is transferred within the above period. V m - (V m - V t ) / N wherein V m represents a voltage that gives a maximum or minimum transmittance of a liquid crystal, and V t represents a liquid-crystal threshold voltage obtained from a V-T (voltage-transmittance) curve. As is seen from these, the picture element switch and the vertical shift register may have a relatively small driving capacity, but the horizontal shift register and the buffer portion are required to drive at a high speed. For this reason, in existing liquid crystal display devices, measures are taken such that the picture element switch and the vertical shift register are formed in a monolithic fashion together with liquid crystals, using polycrystalline silicon or amorphous silicon thin-film transistors (TFTs) deposited on a glass substrate; in other peripheral circuits, IC chips are externally packaged. Although it is attempted to form the peripheral circuits also in a monolithic fashion using polycrystalline silicon TFTs, transistors must be made larger in size or circuits must be of complicated design, because of a small driving capacity of individual TFTs. Meanwhile, as for liquid crystal imaging apparatus such as VTR camera viewfinders or projection display devices, it is important for the substrate to be light-transmissive in their visible light regions. As stated above, peripheral drive circuits with high-performance liquid crystal picture elements are required in order to accomplish high-performance liquid crystal display devices, and a semiconductor layer on which semiconductor elements constituting them are formed should be formed of a semiconductor monocrystalline layer having a good crystallinity. Such peripheral drive circuits must be screened from light. As for the active matrix element which orients a liquid crystal in accordance with a signal, it need not necessarily be formed by monocrystalline transistors, but transistors must be formed on a light-transmitting film. An example will be given below. Assume that the total load of the active matrix element is 50 fF and the voltage swing width for liquid crystal orientation is 10 V, a charge of; 50 × 10 -15 × 10 = 5 × 10 -13 must be flowed in a given time. When it is taken into account to drive this element at 500 kHz as stated above, the saturated current required for the transistors is; I sat × 1/(500 × 10 3 ) > 5 × 10 -13 and is; I sat > 2.5 × 10 -7 . Thus, it is seen to be enough for the saturated current to be 250 nA or more. This is a value that can be well achieved by the polycrystalline silicon or amorphous silicon thin-film transistors. Items required in the peripheral drive circuit elements and the active matrix elements can be summarized as shown in Table 1. Table 1 Peripheral drive circuit element Active matrix element Current driving capacity: Comparable to monocrystalline element Higher than polycrystalline or amorphous element Light transmission properties of substrate: Unnecessary Necessary In instances in which both the driving capacity comparable to monocrystalline elements and the light transmission properties of substrates are required in elements, a monocrystalline SOI (silicon on insulator) must be used. In the case of liquid crystal display devices, however, there is no element in which both of the above two items of performance are required, and hence one may have an idea of a constitution in which the peripheral drive circuit element and the active matrix element are separately built in. If, however, the peripheral drive circuit element and the active matrix element are built in separate substrates, it becomes necessary to connect the both by wire bonding or the like, which results in a complicated process. Thus, it has been sought to make an improvement so that a cost decrease can be achieved and picture elements can be made much finer. An arrangement of this type is described in EP-A-0 530 972, which discloses a liquid crystal display device comprising a monocrystalline silicon layer deposited on an insulating layer which in turn is deposited on a substrate, the insulating layer being transparent. A central area of the monocrystalline silicon is removed to expose the insulating layer, and semiconductor elements are formed on the insulating layer in this area and are electrically connected to semiconductor elements formed on the monocrystalline silicon. A liquid crystal is contained by a glass plate and surrounding sealant over the central area, and the substrate beneath the insulating layer is removed beneath the central area to provide light transmissibility to the central area. Because the monocrystalline silicon is deposited over the transparent insulating layer, the remaining parts of the substrate have no function other than as a physical support, and thus the electrical and/or semiconducting properties of the substrate material are not effectively exploited. An object of the present invention is to provide a semiconductor device and a liquid crystal display device that enable fabrication of an element required to have a performance comparable to that of a monocrystalline element and an element required to be formed on a light-transmitting substrate, on the same substrate by a simple process. To achieve the above object, a first aspect of the present invention provides a process for fabricating a liquid crystal display device by depositing a multi-layer structure on a monocrystalline semiconductor substrate to form a wafer, comprising the steps of: forming a peripheral electric drive circuit on part of one principal surface of the substrate; forming a multilayered liquid crystal display structure by the steps of: a) forming a first insulating light-transmitting film on another part of said principal surface; b) forming a semiconductor element on said insulating light-transmitting film; c) forming a second insulating light-transmitting film on said semiconductor element; d) wiring the peripheral electric drive circuit and the semiconductor element and electrically connecting them; e) forming a third insulating film on the peripheral electric drive circuit and the semiconductor element; and f) sealing a liquid crystal between a light-transmitting plate and said third insulating film using a sealing material; and etching the monocrystalline substrate to remove part thereof from beneath the multilayered structure to expose the underside of the first insulating light-transmitting film, wherein at least one of the first and second insulating light-transmitting films of the multilayered structure is a stress-controlling layer formed of LP-SiN x having a thickness of from 100 to 600nm, or a layer of silicon oxide of a thickness of about 1µm, the stress-controlling layer being formed in such a manner as to generate an amount of tensile stress in the multilayered structure which gives rise to a warpage of from 0 to 100µm of the wafer before the etching step. A second aspect of the invention provides a liquid crystal display device comprising: a wafer consisting of a monocrystalline semiconductor substrate and a multilayer structure formed on a central portion of a principal surface of the substrate, the multilayer structure comprising: a) a first insulating light-transmitting film formed on a central portion of one of the principal surfaces of the substrate; b) an active matrix element formed on the insulating light transmitting film; a drive circuit formed in a monocrystalline semiconductor region of the substrate and electrically connected to the active matrix element; and c) a second insulating light-transmitting film formed on the active matrix element; wherein the substrate is formed with an opening beneath at least a part of the first insulating light-transmitting film on which the active matrix element is formed, wherein one of the first and second insulating light-transmitting films of the multilayered structure is a stress-controlling layer formed of LP-SiN x having a thickness of from 100 to 600nm, or a layer of silicon oxide of a thickness of about 1µm, the stress-controlling layer being formed in such a manner as to generate an amount of tensile stress in the multilayered structure which gives rise to a warpage of from 0 to 100µm of the wafer prior to the formation of the opening A third aspect of the invention provides a wafer for the production of a liquid crystal display device comprising: a monocrystalline semiconductor substrate; and a multilayer structure formed on a central portion of a principal surface of the substrate, the multilayer structure comprising: a) a first insulating light-transmitting film formed on a central portion of one of the principal surfaces of the substrate; b) an active matrix element (4) formed on the insulating light transmitting film; a drive circuit formed in a monocrystalline semiconductor region of the substrate and electrically connected to the active matrix element; and c) a second insulating light-transmitting film formed on the active matrix element, wherein at least one of the first and second insulating light-transmitting films of the multilayered structure is a stress-controlling layer formed of LP-SiN x having a thickness of from 100 to 600nm, or a layer of silicon oxide of a thickness of about 1µm, the stress-controlling layer being formed in such a manner as to generate an amount of tensile stress in the multilayered structure which gives rise to a warpage of from 0 to 100µm of the wafer. Embodiments of the present invention will now be described with reference to the accompanying drawings, in which: Fig. 1 is a diagrammatic cross section to illustrate an example of a conventional liquid crystal display device. Fig. 2 is a cross section to illustrate a fabrication step in an embodiment of the liquid crystal display device of the present invention. Fig. 3 is a cross section to illustrate a fabrication step in an embodiment of the liquid crystal display device of the present invention. Fig. 4 is a cross section to illustrate a fabrication step in an embodiment of the liquid crystal display device of the present invention. Fig. 5 is a cross section to illustrate a fabrication step in an embodiment of the liquid crystal display device of the present invention. Fig. 6 is a cross section to illustrate a fabrication step in an embodiment of the liquid crystal display device of the present invention. Fig. 7 is a cross section to illustrate a fabrication step in an embodiment of the liquid crystal display device of the present invention. Figs. 8A and 8B are diagrammatic cross sections to illustrate a construction and fabrication steps of a light transmission type semiconductor device according to the present invention. Figs. 9A and 9B are diagrammatic cross sections to illustrate a construction and fabrication steps of a light transmission type semiconductor device according to the present invention. Figs. 10A and 10B are diagrammatic cross sections to illustrate a construction and fabrication steps of a light transmission type semiconductor device according to the present invention. Fig. 11 is a graph to show a warpage of a substrate when films are multi-layered thereon. Fig. 12 is a diagrammatic illustration of an example of the liquid crystal display device according to the present invention. The present Invention will be described in detail by giving Examples with reference to the accompanying drawings. Example 1 (Comparative) The semiconductor device of the present invention can be preferably used for a liquid crystal display device having a liquid crystal element serving as an optical element, a photosensor having a photoelectric transducer serving as an optical element, and so forth. In particular, it is characterized in the substrate on which a semiconductor element preferably usable in an optical element is formed. To make it easy to understand the present invention, a conventional semiconductor device will first be described below with reference to Fig. 1, which is a diagrammatic cross section to illustrate an example of a liquid crystal display device. A substrate 100 is provided with a light non-transmitting area 1 and a light-transmitting area 2. The light non-transmitting area 1 is provided with at least one semiconductor element 3 containing a monocrystalline semiconductor layer as an active region. Meanwhile, the light-transmitting area 2 is provided with at least one semiconductor element 4 containing a non-monocrystalline semiconductor layer as an active region. To set up a liquid crystal display device, an aligning film 8 is further provided on the light-transmitting area 2, and a cover glass 7 serving as an opposing substrate is provided thereon. The space formed between them is fill with a liquid crystal 5 and its periphery is sealed with a sealing member 6. As the semiconductor element used here, three-terminal elements such as bipolar transistors and MOS transistors or two-terminal elements such as diodes are preferably used. The light non-transmitting area 1 may preferably comprise a monocrystalline semiconductor, and can be readily made light non-transmissive by controlling its thickness or providing a light screening layer. As for the light-transmitting area 2, an insulating thin film is preferably used. Stated specifically, it is a single layer or multiple layer formed of silicon oxide or silicon nitride. The non-monocrystalline semiconductor used in the semiconductor element provided thereon may be those having a crystal structure such as a polycrystalline, microcrystalline or amorphous structure. These can be readily formed as thin films by chemical vapor deposition (CVD), physical vapor deposition (PVD) or the like. The semiconductor element 4 may preferably be used as a picture element switch. As for the semiconductor element 3, it is used to constitute a peripheral drive circuit such as a drive circuit for driving the semiconductor element 4. Meanwhile, when the photoelectric transducer is used as an optical element, the non-monocrystalline semiconductor layer may be made to serve as a photoelectric conversion portion or an active region of a switching transistor on the light-transmitting area 2. As the substrate 100 it is preferable to use a substrate obtained by forming a light-transmitting insulating film on a substrate comprised of a monocrystalline semiconductor, and thereafter selectively removing the substrate at its portion to be made light-transmissive. More preferably, the light-transmitting area is simultaneously formed when an element separating region for forming a semiconductor element in the light non-transmitting area is formed. Stated specifically, a relatively thick oxide film is formed by selective oxidation. Thus, because of substantial agreement in the level of the surfaces on the light non-transmitting area 1 and light-transmitting area 2, the wiring between elements can be carried out with ease by a conventional process. A process for producing the above liquid crystal display device will be described below with reference to Figs. 2 to 7. First, a silicon wafer 201 having a [100] plane on its principal surface is made ready. A peripheral drive circuit is formed in CMOS construction by a known technique, a monocrystalline wafer semiconductor process. At this time, a liquid crystal picture element display portion is covered with a field oxide film (serving as a light-transmitting film) 202. In the present Example, the field oxide film 202 is set in a thickness of 1 µm. In both an n-MOS transistor 206 and a p-MOS transistor 205, polycrystalline silicon is used as gate materials, and they are each set in a thickness of 4,000 Å. A source and a drain are formed in a self alignment fashion by ion implantation. In the n-MOS transistor 206 and the p-MOS transistor 205, As and BF 2 are implanted at doses of 1 × 10 16 /cm 2 and 2 × 10 15 /cm 2 , respectively. After the impurity ions have been implanted in the source and drain portions, NSG (non-doped silicate glass) 203 is deposited by normal pressure CVD in a thickness of about 2,000 Å. Next, polycrystalline silicon 204 is deposited by low pressure CVD in a thickness of about 2,500 Å. Then, boron is ion-implanted at a dose of of 1 × 10 11 /cm 2 over the whole surface (see Fig. 2). Next, on the portion where an active matrix element is to be formed, a resist pattern is left in the form of islands by photolithography. Using the resist as a mask, polycrystalline silicon regions 204 are formed at given positions by isotropic dry etching. Thereafter, an oxide film 207 of 500 Å thick is made to grow on each polycrystalline silicon region 204 by pyrogenic oxidation at 950°C. These serve as gate oxide films of thin-film transistors (see Fig. 3). Next, polycrystalline silicon is over again deposited by low pressure CVD, and gate electrodes 208 of the thin-film transistors are formed by anisotropic etching. Thereafter, the peripheral drive circuit portion is masked with a resist, and arsenic is ion-implanted at a dose of about 5 × 10 15 /cm 2 . Then, heat treatment is applied in a nitrogen atmosphere at 900°C for 20 minutes to form the thin-film transistors (see Fig. 4.) Next, NSG 209 is again deposited in a thickness of about 5,000 Å by normal pressure CVD, and contact holes are made in the source and drain regions and gate electrode regions of the transistors. In that instance, because of a difference between the thickness 7,000 Å of the interlayer insulating films (203 and 209) in the peripheral drive circuit area (area I) and the thickness 5,000 Å of the interlayer insulating film 209 in the active matrix element area (area II), it is safer from the viewpoint of a process to make contact holes separately in the area I and in the area II. In practice, however, CHF 3 -C 2 F 6 type dry etching caused no trouble at all even when all the contact holes were made together. Thereafter, an electrode material such as aluminum is deposited by sputtering, and is worked into a given wiring form by dry etching to form wirings 210 (see Fig. 5). Next, using a transparent electrode material such as ITO known in the art, a capacitor portion is formed to cover the whole surface with a transparent insulating film 211. Thereafter, a sealing member 212 and a glass cover 214 are attached to seal a liquid crystal 213 (see Fig. 6). Finally, using a wet etching solution comprising KOH or an organic alkali such as ethylenediamine, silicon is removed from the silicon substrate 201 so as to be hollowed out at its given area on the back surface. In that instance, the wet etching solution does not dissolve silicon dioxide, and hence the etching stops at the field oxide film 202. As a result, the active matrix element area becomes transparent and comes to be functionable as a liquid crystal image display device (see Fig. 7). Although the above active matrix element makes use of an n-channel type MOSFET, and it may alternatively make use of a p-channel type MOSFET. The peripheral drive circuit, constituted of a CMOS circuit in the above, may alternatively be constituted of a Bi-CMOS circuit containing a bipolar transistor, taking account of an improvement in driving capacity. For the purpose of decreasing steps, the following fabrication process is also possible. The NSG film 203 shown in Fig. 2 is omitted, and the gate electrode portions of the n-MOS transistor 206 and p-MOS transistor 205 are beforehand thermally oxidized in a thickness of 300 Å. At this time, none of impurities of the source and drain regions have been implanted in both the p-MOS transistor 206 and the p-MOS transistor 205. After the source/drain regions of the thin-film transistors have been formed, the peripheral drive circuit portion and the source/drain regions of the thin film transistors are simultaneously formed. The subsequent steps are the same as the fabrication steps described above. Whether or not the steps can be shortened in this way depends on whether or not the selectivity to silicon dioxide can be highly assured when the second polycrystalline silicon layers 204 are subjected to dry etching. This can be well accomplished by means of an existing dry etching apparatus making use of CF 4 . Example 2 In order to prevent wrinkles from occurring on a thin-film portion remaining after etching, and taking account of film thickness of films formed layer by layer and a stress produced when a single layer is formed, the semiconductor device of the present invention is provided with a layer capable of controlling the stress on the whole multiple layers (a stress controlling layer), or provided with a layer capable of functioning as the stress controlling layer and as an insulating layer used when a semiconductor integrated circuit is fabricated. In the device thus constituted, the stress produced in the substrate when a non-transparent portion under the insulating layer is removed by etching acts as a tensile stress because of the multilayer film structure containing the stress controlling layer, and hence the multi-layer film where the semiconductor integrated circuit has been built in can be prevented from wrinkling. An example thereof will be described with reference to Figs. 8A and 8B. Figs, 8A and 8B are diagrammatic cross sections to illustrate a multi-layer film structure of a light transmission type semiconductor integrated circuit built in a monocrystalline silicon thin film on an insulating layer. Figs, 8A and 8B also illustrate fabrication steps of a semiconductor device for liquid crystal driving, where Fig. 8A shows a constitution in which the display area has not been made transparent, and Fig. 8B, a structure in which it has been made transparent by etching away the substrate 101. In the drawings, reference numeral 101 denotes an Si substrate; 102 and 103, SiO 2 layers; and 110, an active region in which a liquid crystal driving MOS transistor is formed. The SiO 2 layer 102 should preferably have a layer thickness of about 400 nm, and the SiO 2 layer 103 should preferably have a layer thickness of about 1,100 nm. Reference numeral 104 denotes an LP-SiNx film (SiNx film formed by low-pressure gas phase synthesis) serving as the stress controlling layer according to the present Example; 105, an interlayer insulating film; 112, Al wiring; and 111, polysilicon gate wiring. Reference numeral 113 denotes a BPSG film provided to increase smoothness and insulating properties; 106 and 108, ITO films that hold between them a PSG film 107 or an SiNx film (a p-SiNx film) formed by plasma CVD, to form a liquid crystal holding capacitor. Reference numeral 109 denotes a passivation film, formed of p-SiNx, PSG, polyimide or the like. In the present Example, the LP-SiNx film 104 serves as the stress controlling layer of the whole multi-layer film where the semiconductor integrated circuit has been built in. It should preferably have a film thickness of about 600 nm. Each film was formed by using known techniques for fabricating semiconductor integrated circuits. Next, after a black matrix and a color filter were formed on a cover glass, common electrodes were formed, followed by orientation treatment. The substrate on which the semiconductor integrated circuit had been formed was subjected to orientation, and a sealing material was printed. Thereafter, the cover glass and the substrate on which the semiconductor integrated circuit had been formed were put together and liquid crystal was injected into the space between them. To the steps concerning this liquid crystal, known techniques for producing liquid crystal display devices were applied. Thereafter, the silicon substrate was covered with a base-resistant rubber except its portion right beneath the liquid crystal image display area, and the silicon substrate 101 was partially removed until the insulating film 102 was laid bare, using a tetramethylammonium hydroxide (TMAH) solution. In order to improve reliability, the recess in the substrate formed by the partial removal was filled with a transparent resin to make the device light-transmissive. Thus, a projection type liquid crystal image display device was completed. Fig. 12 illustrates the liquid crystal image display device according to the present Example, thus produced. In the drawing, reference numeral 101 denotes a silicon substrate; 501, a liquid crystal driving element layer; 502, a transparent resin; 503, an adhesive; 504, a liquid crystal; and 505, a cover glass. Fig. 11 is a graph to show how the stress changes as the respective layers of the multi-layer film having been made transparent in the above constitution are formed layer by layer, where the stress is shown by calculating it as a warpage of the wafer. Most films formed in multiple layers are films with compressive stress that cause wrinkles. However, the LP-SiNx film 104 is seen to have converted the stress of the whole multi-layer film into tensile stress, showing that the LP-SiNx film 104 effectively acts as the stress controlling layer according to the present invention. Table 2 also shows the stress produced in the multi-layer film when the layer thickness of the LP-SiNx film 104 was changed to range from 0 to 800 nm, where the stress is shown by calculating it as a warpage of the wafer. When the stress of the whole multi-layer film, calculated as a warpage of the wafer, was in a tensile stress of from 0 to 100 µm, the removal of the silicon substrate 101 up to the bottom of the SiO 2 layer 102 by etching made the semiconductor integrated circuit area on the upper part of the SiO 2 film 102 transparent and then brought about the achievement of a uniform plane usable as that of a liquid crystal display device. When, however, the stress of the whole multi-layer film was on the side of compressive stress, the film became wrinkled, or when the stress of the whole multi-layer film, calculated as a warpage of the wafer, was in a tensile stress of more than 100 µm, the film cracked because of an excessive tensile stress. Relationship between a warpage of 5"-Si [100] wafer and the state of the film Thickness of LP-SiNx film 104 Warpage (µm) Direction of stress State of the film 0 nm +10 µm Compressive Wrinkled 100 nm 0 µm - Tensed 400 nm -30 µm Tensile Tensed 600 nm -100 µm Tensile Tensed 800 nm < -100 µm Tensile Broken Example 3 Figs. 9A and 9B illustrate another example of the semiconductor device for liquid crystal driving of the present invention, where Fig. 9A shows a constitution in which the display area has not been made transparent, and Fig. 9B, a structure in which it has been made transparent by etching away the substrate 101. In the drawings, reference numeral 101 a silicon substrate; and 202, an LP-SiNx film. In the present Example, the LP-SiNx layer 202 serves as the stress controlling layer of the whole multi-layer film where a semiconductor integrated circuit has been built in. It should preferably have a layer thickness of from about 200 to about 400 nm. An SiO 2 layer 203 may be provided so that the active layer can be made stable. Reference numeral 103 denotes an SiO 2 layer. The SiO 2 layer should preferably have a layer thickness of about 1,100 nm. Reference numeral 110 denotes an active region in which an MOS transistor for liquid crystal driving is formed. Reference numeral 204 denotes an interlayer insulating film for Al wiring 112 and polysilicon gate wiring 111. Reference numeral 203 denotes a BPSG film provideded to increase smoothness and insulating properties. ITO films denoted by reference numerals 106 and 108 hold between them a PSG film 107 or a p-SiNx film to form a liquid crystal holding capacitor. Reference numeral 109 denotes a passivation film, formed of p-SiNx, PSG, polyimide or the like. Each film was formed by using known techniques for fabricating semiconductor integrated circuits. Next, after a black matrix and a color filter were formed on a cover glass, common electrodes were formed, followed by orientation. The substrate on which the semiconductor integrated circuit had been formed was subjected to orientation, and a sealing material was printed. Thereafter, the both were put together and liquid crystal was injected into the space between them. To the steps concerning this liquid crystal, known techniques for producing liquid crystal display devices were applied. Thereafter, the silicon substrate was covered with a base-resistant rubber except its portion right beneath the liquid crystal image display area, and the silicon substrate 101 was partially removed until the insulating film 102 was laid bare, using a tetramethylammonium hydroxide (TMAH) solution. In order to improve reliability, the recess in the substrate formed by the partial removal was filled with a transparent resin to make the device light-transmissive. Thus, a projection type liquid crystal image display device was completed. When the stress of the whole multi-layer film, calculated as a warpage of the wafer, was in a tensile stress of from 0 to 100 µm, the removal of the silicon substrate 101 up to the bottom of the LP-SiNx layer 202 by etching made the semiconductor integrated circuit area on the upper part of the LP-SiNx layer 202 transparent and then brought about the achievement of a uniform plane usable as that of a liquid crystal display device. When, however, the stress of the whole multi-layer film was on the side of compressive stress, the film became wrinkled, or when the stress of the whole multi-layer film, calculated as a warpage of the wafer, was in a tensile stress of more than 100 µm, the film cracked because of an excessive tensile stress. Example 4 Figs. 10A and 10B illustrate still another example of the semiconductor device for liquid crystal driving of the present invention, where Fig. 10A shows a constitution in which the display area has not been made transparent, and Fig. 10B, a structure in which it has been made transparent by etching away the substrate 101. In the drawings, reference numeral 101 denotes an Si substrate; 102 and 103, SiO 2 layers; and 110, an active region in which a liquid crystal driving MOS transistor is formed. The layer 102 should preferably have a layer thickness of about 400 nm, and the layer 103 should preferably have a layer thickness of about 1,100 nm. Reference numeral 304 denotes an interlayer insulating film for Al wiring 112 and polysilicon gate wiring 111. In the present Example, the interlayer insulating film 304 serves as the stress controlling layer of the whole multi-layer film where a semiconductor integrated circuit has been built in. The interlayer insulating film 304 is comprised of a silicon oxide film formed by gas phase synthesis using TEOS as a starting material gas, and has a layer thickness of about 1 µm. ITO films denoted by reference numerals 106 and 108 hold between them a PSG film or p-SiNx film 107 to form a liquid crystal holding capacitor. Reference numeral 109 denotes a passivation film, formed of p-SiNx, PSG, polyimide or the like. Each film was formed by using known techniques for fabricating semiconductor integrated circuits. Next, after a black matrix and a color filter were formed on a cover glass, common electrodes were formed, followed by orientation. The substrate on which the semiconductor integrated circuit had been formed was subjected to orientation, and a sealing material was printed. Thereafter, the both were put together and liquid crystal was injected into the space between them. To the steps concerning this liquid crystal, known techniques for producing liquid crystal display devices were applied. Thereafter, the silicon substrate was covered with a base-resistant rubber except its portion right beneath the liquid crystal image display area, and the silicon substrate 101 was partially removed until the insulating film 102 was laid bare, using a tetramethylammonium hydroxdie (TMAH) solution. In order to improve reliability, the recess in the substrate formed by the partial removal was filled with a transparent resin to make the device transparent. Thus, a light-transmitting, projection type liquid crystal display device was completed. When the stress of the whole multi-layer film, calculated as a warpage of the wafer, was in a tensile stress of from 0 to 100 µm, the removal of the silicon substrate 101 up to the bottom of the SiO 2 layer 102 by etching made the semiconductor integrated circuit area on the upper part of the SiO 2 layer 102 transparent and then brought about the achievement of a uniform plane usable as that of a liquid crystal display device. When, however, the stress of the whole multilayer film was on the side of compressive stress, the film became wrinkled, or when the stress of the whole multi-layer film, calculated as a warpage of the wafer, was in a tensile stress of more than 100 µm, the film cracked because of an excessive tensile stress. As shown in the above Examples, a tensile-stressed film like the LP-SiNx film is provided in the multi-layer film so that the stress in the whole multilayer film can be controlled. This makes it possible to prevent the wrinkles or cracks due to internal stress from occurring even when the lower part silicon substrate is removed. As a result, a high-quality, light transmission type semiconductor device using monocrystals in the device can be accomplished.

Claims: A process for fabricating a liquid crystal display device by depositing a multi-layer structure (102-109) on a monocrystalline semiconductor substrate (101) to form a wafer, comprising the steps of: forming a peripheral electric drive circuit (3, 205, 206) on part of one principal surface of the substrate (101); forming a multilayered liquid crystal display structure by the steps of: a) forming a first insulating light-transmitting film (102, 202) on another part of said principal surface; b) forming a semiconductor element (4) on said insulating light-transmitting film (102, 202); c) forming a second insulating light-transmitting film (104, 204, 304) on said semiconductor element; d) wiring the peripheral electric drive circuit (3, 205, 206) and the semiconductor element (4) and electrically connecting them; e) forming a third insulating film (211) on the peripheral electric drive circuit (3, 205, 206) and the semiconductor element (4); and f) sealing a liquid crystal (213) between a light-transmitting plate (214) and said third insulating film (211) using a sealing material (212); and etching the monocrystalline substrate (101) to remove part thereof (2) from beneath the multilayered structure to expose the underside of the first insulating light-transmitting film (102, 202); characterised in that at least one of the first and second insulating light-transmitting films (102, 202, 104, 204, 304) of the multilayered structure is a stress-controlling layer (104, 202) formed of LP-SiN x having a thickness of from 100 to 600nm, or a layer (304) of silicon oxide of a thickness of about 1µm, the stress-controlling layer being formed in such a manner as to generate an amount of tensile stress in the multilayered structure which gives rise to a warpage of from 0 to 100µm of the wafer before the etching step. The process according to claim 1, wherein said third insulating film (211) is the stress controlling layer. The process for fabricating a liquid crystal display device according to claim 2 or claim 3, wherein said stress controlling layer is deposited before the step of wiring. The process for fabricating a liquid crystal display device according to claim 1, wherein said stress controlling layer comprises a silicon oxide film formed by gas phase synthesis. A liquid crystal display device comprising: a wafer consisting of a monocrystalline semiconductor substrate (101, 201) and a multilayer structure formed on a central portion of a principal surface of the substrate, the multilayer structure comprising: a) a first insulating light-transmitting film (102, 202, 203) formed on a central portion of one of the principal surfaces of the substrate; b) an active matrix element (4) formed on the insulating light transmitting film (102, 202, 203); a drive circuit (3, 205, 206) formed in a monocrystalline semiconductor region (1) of the substrate (101, 201) and electrically connected to the active matrix element (4); and c) a second insulating light-transmitting film (104, 204, 304) formed on the active matrix element (4); wherein the substrate (101, 201) is formed with an opening (2) beneath at least a part of the first insulating light-transmitting film (102, 202, 203) on which the active matrix element (4) is formed; characterised in that one of the first and second insulating light-transmitting films (102, 202, 104, 204, 304) of the multilayered structure is a stress-controlling layer (104, 202) formed of LP-SiN x having a thickness of from 100 to 600nm, or a layer (304) of silicon oxide of a thickness of about 1µm, the stress-controlling layer being formed in such a manner as to generate an amount of tensile stress in the multilayered structure which gives rise to a warpage of from 0 to 100µm of the wafer prior to the formation of the opening (2). The liquid crystal display device according to claim 5, wherein said active matrix element (4) comprises a thin film diode or thin film transistor formed of a polycrystalline silicon or an amorphous silicon. The liquid crystal display device according to claim 5, wherein said semiconductor monocrystalline substrate (201) comprises a silicon monocrystalline substrate having a 100 plane on its principal surface. The liquid crystal display device according to claim 5, further comprising a cover glass (214) arranged in opposition to said substrate and a liquid crystal (213) sandwiched between said substrate and the cover glass (214). The liquid crystal display device according to claim 5, further comprising an alignment layer provided on said insulating light-transmitting film. A wafer for the production of a liquid crystal display device comprising: a monocrystalline semiconductor substrate (101, 201); and a multilayer structure formed on a central portion of a principal surface of the substrate, the multilayer structure comprising: a) a first insulating light-transmitting film (102, 202, 203) formed on a central portion of one of the principal surfaces of the substrate; b) an active matrix element (4) formed on the insulating light transmitting film (102, 202, 203); a drive circuit (3, 205, 206) formed in a monocrystalline semiconductor region (1) of the substrate (101, 201) and electrically connected to the active matrix element (4); and c) a second insulating light-transmitting film (104, 204, 304) formed on the active matrix element (4); characterised in that at least one of the first and second insulating light-transmitting films (102, 202, 104, 204, 304) of the multilayered structure is a stress-controlling layer (104, 202) formed of LP-SiN x having a thickness of from 100 to 600nm, or a layer (304) of silicon oxide of a thickness of about 1µm, the stress-controlling layer being formed in such a manner as to generate an amount of tensile stress in the multilayered structure which gives rise to a warpage of from 0 to 100µm of the wafer.

Inventors: ASABA TETSUO, GENCHI YUTAKA, SAKAMOTO MASARU, ASABA, TETSUO, GENCHI, YUTAKA, SAKAMOTO, MASARU, ASABA, TETSUO, C/O CANON KABUSHIKI KAISHA, GENCHI, YUTAKA, C/O CANON KABUSHIKI KAISHA, SAKAMOTO, MASARU, C/O CANON KABUSHIKI KAISHA
Applicants: CANON KK, CANON KABUSHIKI KAISHA
Application year: 1993
Main classification: G02F1
IPC codes: H01L27, H01L21, G02F1