Microwave component of oxide superconducter material

Abstract: A microwave component includes a superconducting signal conductor (10) formed on a first dielectric substrate (20) and a superconducting ground conductor (30) formed on a second dielectric substrate (40). The first dielectric substrate (20) is staked on the superconducting ground conductor (10) of the second dielectric substrate (40). Each of the superconducting signal conductor (10) and the superconducting ground conductor (30) is formed of an oxide superconductor thin film of which crystals are orientated in such a manner that the c-planes of the crystals are parallel to the direction in which an electro-magnetic field generated by microwave launched to the microwave component changes.

Description: Background of the Invention Field of the invention The present invention relates to microwave components, and particularly to a novel structure of microwave components which have a signal conductor formed of an oxide superconductor thin film. Description of related art Electromagnetic waves called "microwaves" or "millimetric waves" having a wavelength in a range of a few tens centimeters to a few millimeters can be theoretically said to be merely a part of an electromagnetic wave spectrum, but in many cases, have been considered from a viewpoint of an electric engineering as being a special independent field of the electromagnetic wave, since special and unique methods and devices have been developed for handling these electromagnetic waves. In the case of propagating an electromagnetic wave in frequency bands which are called the microwave and the millimetric wave, a twin-lead type feeder used in a relative low frequency band has an extremely large transmission loss. In addition, if an inter-conductor distance approaches a wavelength, a slight bend of the transmission line and a slight mismatch in connection portion cause reflection and radiation, and is easily influenced from adjacent objects. Thus, a tubular waveguide having a sectional size comparable to the wavelength has been actually used. The waveguide and a circuit constituted of the waveguide constitute a three-dimensional circuit, which is larger than components used in ordinary electric and electronic circuits. Therefore, application of the microwave circuit has been limited to special fields. However, miniaturized devices composed of semiconductor have been developed as an active element operating in a microwave band. In addition, with advancement of integrated circuit technology, a so-called microstrip line having a extremely small inter-conductor distance has been used. In general, the microstrip line has an attenuation coefficient that is attributable to a resistance component of the conductor. This attenuation coefficient attributable to the resistance component increases in proportion to a root of a frequency. On the other hand, the dielectric loss increases in proportion to increase of the frequency. However, the loss in a recent microstrip line is almost attributable to the resistance of the conductor in a frequency region not greater than 10 GHz, since the dielectric materials have been improved. Therefore, if the resistance of the conductor in the strip line can be reduced, it is possible to greatly elevate the performance of the microstrip line. Namely, by using a superconducting microstrip line, the loss can be significantly decreased and microwaves of higher frequency range can be transmitted. As well known, the microstrip line can be used as a simple signal transmission line. In addition, if a suitable patterning is applied, the microstrip line can be used as microwave components including an inductor, a filter, a resonator, a delay line, etc. Accordingly, improvement of the microstrip line will lead to improvement of characteristics of the microwave component. The article titled "superconducting stripline resonator performance", IEEE transactions on magnetics, vol 25 n°2, March 1989, pages 1104-1106, discloses a microwave device which comprises one superconducting ground plane of an a-axis oriented YBaCuO thin film, another superconducting ground plane of Nb/Au and a superconducting signal conductor of Nb. In addition, the oxide superconductor material which has been recently advanced in study makes it possible to realize the superconducting state by low cost liquid nitrogen cooling. Therefore, various microwave components having a signal conductor formed of an oxide superconductor have been proposed. However, one problem has been encountered in which a ratio of a density n s of superconducting electrons to a density n n of normal conducting electrons changes as its temperature changes, even if the temperature is lower than the critical temperature. By this, the magnetic field penetration depth λ of the oxide superconductor changes as its temperature changes. In the case of a filter or a microwave resonator using the oxide superconductor, this change of the magnetic field penetration depth λ of the oxide superconductor results in change of the resonating frequency ƒ o . Namely, the resonating frequency ƒ o of the filter and the microwave resonator has a temperature dependence under the critical temperature of the oxide superconductor. The microwave components using the oxide superconductor are chilled by liquid nitrogen during the operation, so that the change of temperature is essentially small. Therefore, it is impossible to maintain the constant temperature of the microwave components practically during the operation so as to prevent the change of the resonating frequency ƒ o . Summary of the Invention Accordingly, it is an object of the present invention to provide microwave components which have overcome the above mentioned defect of the conventional ones. Another object of the present invention is to provide a novel microwave resonator of which the resonating frequency has little temperature dependency. Still another object of the present invention is to provide a novel filter of which the resonating frequency has little temperature dependency. The above and other objects of the present invention are achieved in accordance with the present invention by a microwave component comprising a first dielectric substrate (20); a patterned superconducting signal conductor (10) provided at a first surface of said first dielectric substrate (20); and a superconducting ground conductor (30) provided at a second surface of said first dielectric substrate (20), said superconducting ground conductor being formed of an a-axis oriented oxide superconductor, means for providing a microwave signal applied to and launched on the superconducting signal conductor (10) for generating an electromagnetic field which penetrates into said superconducting signal conductor (10), and characterised in that said superconducting signal conductor (10) is formed of an oxide superconductor thin film, the crystals of which being oriented in such a manner that their c-axes are parallel to the first surface of said substrate thereby reducing penetration of the electromagnetic field into said superconducting signal conductor in the direction parallel to the c-plane, or perpendicular to the c-axis of the oxide superconductor crystal. As seen from the above, the microwave component in accordance with the present invention is characterized in that it has a superconducting signal conductor and a superconducting ground conductor formed of a specific oxide superconductor thin film. It has been known that the oxide superconductor has various unique characteristics different from conventional metal superconductors. The microwave component in accordance with the present invention utilizes one of the unique characteristics of the oxide superconductor. Namely, the oxide superconductor has an isotropic superconducting property that the magnetic field penetration depth λ of the oxide superconductor is the shortest in the direction parallel to the c -plane of its crystal, or perpendicular to the c -axis of its crystal. Therefore, if the superconducting signal conductor and the superconducting ground conductor are formed of an oxide superconductor thin film of which crystals are orientated in such a manner that the c -planes of the crystals are parallel to the direction in which an electro-magnetic field generated by microwave launched to the microwave component changes, the magnetic field penetrate into the superconducting signal conductor and the superconducting ground conductor for an extremely short length. Therefore, the microwave component has little temperature dependency of the resonating frequency in the temperature region not higher than the critical temperature. In the above mentioned microwave component, launched microwave travels along the surface of the substrate and an electromagnetic field is generated in the direction perpendicular to the surface. Therefore, the crystals of the oxide superconductor thin film are orientated in such a manner that the c -axes of the crystals are parallel to the substrate. In one preferred embodiment, the oxide superconductor thin film is an a -axis orientated oxide superconductor thin film. The superconducting signal conductor layer and the superconducting ground conductor layer of the microwave component in accordance with the present invention are formed of thin films of general oxide superconductor materials such as a high critical temperature (high-Tc) copper-oxide type oxide superconductor material typified by a Y-Ba-Cu-O type compound oxide superconductor material, a Bi-Sr-Ca-Cu-O type compound oxide superconductor material, and a Tl-Ba-Ca-Cu-O type compound oxide superconductor material. In addition, deposition of the oxide superconductor thin film can be exemplified by a sputtering, a laser evaporation, etc. The substrate can be formed of a material selected from the group consisting of MgO, SrTiO 3 , NdGaO 3 , Y 2 O 3 , LaAlO 3 , LaGaO 3 , Al 2 O 3 , and ZrO 2 . However, the material for the substrate is not limited to these materials, and the substrate can be formed of any oxide material which does not diffuse into the high-Tc copper-oxide type oxide superconductor material used, and which substantially matches in crystal lattice with the high-Tc copper-oxide type oxide superconductor material used, so that a clear boundary is formed between the oxide insulator thin film and the superconducting layer of the high-Tc copper-oxide type oxide superconductor material. From this viewpoint, it can be said to be possible to use an oxide insulating material conventionally used for forming a substrate on which a high-Tc copper-oxide type oxide superconductor material is deposited. A preferred substrate material includes a MgO single crystal, a SrTiO 3 single crystal, a NdGaO 3 single crystal substrate, a Y 2 O 3 , single crystal substrate, a LaAlO 3 single crystal, a LaGaO 3 single crystal, a Al 2 O 3 single crystal, and a ZrO 2 single crystal. For example, the oxide superconductor thin film can be deposited by using, for example, a (100) surface of a MgO single crystal substrate, a (110) surface or (100) surface of a SrTiO 3 single crystal substrate and a (001) surface of a NdGaO 3 single crystal substrate, as a deposition surface on which the oxide superconductor thin film is deposited. The above and other objects, features and advantages of the present invention will be apparent from the following description of preferred embodiments of the invention with reference to the accompanying drawings However, the examples explained hereinafter are only for illustration of the present invention, and therefore, it should be understood that the present invention is in no way limited to the following examples. Brief Description of the Drawings Figure 1 is a diagrammatic sectional view showing a first embodiment of the superconducting microwave component in accordance with the present invention; Figure 2 is a pattern diagram showing an embodiment of the signal conductor of the superconducting microwave component shown in Figure 1; Figure 3 is a diagrammatic sectional view showing a second embodiment of the superconducting microwave component in accordance with the present invention; and Figures 4 through 9 are pattern diagrams of embodiments of the signal conductor of the superconducting microwave component shown in Figure 1. Description of the Preferred embodiments Referring to Figure 1, there is shown a diagrammatic sectional view showing an embodiment of the microwave component in accordance with the present invention. The shown microwave component includes a first substrate 20 formed of a dielectric material and having an upper surface formed with a superconducting signal conductor 10 constituted of an a -axis orientated oxide superconductor thin film patterned in a predetermined shape mentioned hereinafter, and a second substrate 40 formed of a dielectric material and having an upper surface fully covered with a superconducting ground conductor 30 also formed of an a -axis orientated oxide superconductor thin film. The first and second substrates 20 and 40 are stacked on each other in such a manner that an all lower surface of the first substrate 20 is in contact with the superconducting ground conductor 30. The stacked assembly of the first and second substrates 20 and 40 is located within a hollow package 50a of a square section having upper and lower open ends, which is encapsulated and sealed at its upper and lower ends with a top cover 50a and a bottom cover 50b, respectively. The second substrate 40 lies on an upper surface of the bottom cover 50b. Since the oxide superconductor thin film 10 is formed on the first substrate 20 and the oxide superconductor thin film 30 is formed on the second substrate 40 independently of the first substrate 20, it is possible to avoid deterioration of the oxide superconductor thin films, which would occur when a pair of oxide superconductor thin films are sequentially deposited on one surface of a substrate and then on the other surface of the same substrate. As shown in Figure 1, the second substrate 40 is larger in size than the first substrate 20, and an inner surface of the package 50a has a step 51 to comply with the difference in size between the first substrate 20 and the second substrate 40. Thus, the second substrate 40 is sandwiched and fixed between the upper surface of the bottom cover 50b and the step 51 of the package 50a, in such a manner that the superconducting ground conductor 30 formed on the second substrate 40 is at its periphery in contact with the step 51 of the package 50a. In addition, the top cover 50b has an inner wall 52 extending downward along the inner surface of the package 50a so as to abut against the upper surface of the first substrate 20, so that the first substrate 20 is forcibly pushed into a close contact with the the superconducting ground conductor 30 of the second substrate 40, and held between the second substrate 40 and a lower end of the inner wall 52 of the top cover 50b. In addition, actually, lead conductors (not shown) are provided to penetrate through the package 50a or the cover 50b in order to launch microwave into the signal conductor 10. Figure 2 shows a pattern of the superconducting signal conductor 10 formed on the first substrate 20 in the microwave component shown in Figure 1. The microwave component which has the superconducting signal conductor patten shown in Figure 2 becomes a microwave resonator. As shown in Figure 2, on the first substrate 20 there are formed a circular superconducting signal conductor 11 to constitute a resonator, and a pair of superconducting signal conductors 12 and 13 launching and picking up the microwave to and from the superconducting signal conductor 11. These superconducting signal conductors 11, 12 and 13 and the superconducting ground conductor 30 on the second substrate 40 are formed of an a -axis orientated oxide superconductor thin film, for example an a -axis orientated Y 1 Ba 2 Cu 3 O 7-δ compound oxide superconductor thin film. The oxide superconductor thin film is not limited to the a -axis orientated oxide superconductor thin film but it can be constituted of oxide superconductor crystals which are orientated in such a manner that the c -axes of the oxide superconductor crystals are parallel to the surface of the substrate. The microwave resonator having the above mentioned construction is used by cooling the superconducting signal conductor 10 and the superconductor ground conductor 30 so that the conductors 10 and 30 behave as superconductors. When microwave is launched into the signal conductor 10, magnetic field shown by an arrow H and electric field shown by arrows E are generated. Since the superconducting signal conductor 10 and the superconductor ground conductor 30 are formed of an α-axis orientated oxide superconductor thin film, the magnetic field penetrates into the superconducting signal conductor 10 and the superconductor ground conductor 30 in the direction parallel to the c -plane, or perpendicular to the c -axis of the oxide superconductor crystal, so that the penetration depth becomes quite small. Therefore, the change of the resonating frequency with temperature becomes negligibly small. A microwave resonator having a construction shown in Figure 3 was actually manufactured. The microwave resonator shown in Figure 3 has a construction basically similar to that shown in Figure 1, but additionally includes a third substrate 40a formed with an a -axis orientated oxide superconductor thin film which constitutes a second superconducting ground conductor 30a. The third substrate 40a is formed of a dielectric material, and is stacked on the superconducting signal conductor 10 and is located within the package 50a. The third substrate 40a is brought into a close contact with the superconducting signal conductor 10 by means of a spring 70. The first substrate 20 was formed of a square MgO substrate having each side of 18mm and a thickness of 1mm. The superconducting signal conductor 10 was formed of an a -axis orientated Y 1 Ba 2 Cu 3 O 7-δ compound oxide thin film having a thickness of 500 nanometers. This Y 1 Ba 2 Cu 3 O 7-δ compound oxide superconductor thin film was deposited by a sputtering. The deposition condition was as follows: Target Y 1 Ba 2 Cu 3 O 7-δ Sputtering gas Ar containing 20 mol % of O 2 Gas pressure (0.5 Torr) 66.65 Pa Substrate Temperature 580 °C Film thickness 500 nanometers The superconducting signal conductor 10 thus formed was patterned as follows so as to constitute the resonator: The superconducting signal conductor 11 is in the form of a circle having a diameter of 12 mm, and the pair of superconducting signal launching conductors 12 and 13 have a width of 0.4 mm and a length of 2.0 mm. A distance or gap between the superconducting signal conductor 11 and each of the superconducting signal launching conductors 12 and 13 is 1.0 mm at a the shortest portion. On the other hand, the second substrate 40 and the third substrate 40a were formed of square MgO substrates having a thickness of 1 mm. The second substrate 40 and the third substrate have each side of 20 mm and 18 mm, respectively. The superconducting ground conductors 30 and 30a were formed of an a -axis orientated Y 1 Ba 2 Cu 3 O 7-δ compound oxide thin film having a thickness of 500 nanometers, in a sputtering similar to that for deposition of superconducting signal conductor 10. The above mentioned three substrates 20, 40, and 40a were located within the square-section hollow package 50a formed of brass, and opposite openings of the package 50a were encapsulated and sealed with the covers 50b and 50c also formed of brass. In this process, the third substrate 40a was brought into a close contact with the superconducting signal conductor 10 by means of a spring 70. For the superconducting microwave resonator thus formed, a frequency characteristics of the transmission power was measured by use of a network analyzer. By locating the microwave resonator in accordance with the present invention and a conventional microwave resonator using c -axis orientated Y 1 Ba 2 Cu 3 O 7-δ oxide superconductor thin film in a cryostat, resonating frequency was measured at temperatures of 77K, 79K, and 81K, respectively. The result of the measurement is as follows: measurement temperature (K) 77 79 81 resonating frequency (MHz) (Present invention) 4446.7 4446.5 4446.4 resonating frequency (MHz) (Reference) 4448.1 4446.5 4444.5 It will be noted that the resonating frequency of the microwave resonator in accordance with the present invention changed little with the temperature. As mentioned above, the microwave resonator in accordance with the present invention is so constructed that the resonating frequency ƒ o negligibly changes with temperature. Therefore, the resonator has a stable performance and the adjustment is unnecessary during the operation. Accordingly, the microwave resonator in accordance with the present invention can be effectively used in a local oscillator of microwave communication instruments, and the like. Figures 4 to 9 show other pattens of the superconducting signal conductor 10 formed on the first substrate 20 in the microwave component shown in Figure 1. The microwave components which have these superconducting signal conductor pattens become various filters. Figure 4 shows a pattern for a band-pass filter. As shown in Figure 4, on the first substrate 20 there are formed six rectangular superconducting signal conductors 110 arranged in a row at a constant interval in parallel with each other to constitute a resonator of λ g /4, a pair of superconducting ground conductors 31 and 32 to which the every other signal conductor is connected, and a pair of superconducting signal conductors 12 and 13 launching and picking up the microwave to and from the both end superconducting signal conductors 110. These superconducting signal conductors 110, 12 and 13 and the superconducting ground conductor 31 and 32 can be formed of an α-axis orientated oxide superconductor thin film, for example an a-axis orientated Y 1 Ba 2 Cu 3 O 7-δ compound oxide superconductor thin film like the superconducting signal conductors shown in Figure 2. The band-pass filter having the above mentioned construction is used by cooling the superconducting signal conductor 10 and the superconductor ground conductor 30 so that the conductors 10 and 30 behave as superconductors. When microwave is launched into the signal conductor 10, magnetic field and electric field are generated. Since the superconducting signal conductor 10 and the superconductor ground conductor 30 are formed of an a -axis orientated oxide superconductor thin film, the magnetic field penetrates into the superconducting signal conductor 10 and the superconductor ground conductor 30 in the direction parallel to the c -plane, or perpendicular to the c -axis of the oxide superconductor crystal, so that the penetration depth becomes quite small. Therefore, the change of the resonating frequency with temperature becomes negligibly small, so that the band-pass filter has a stable characteristics. Figure 5 shows another pattern for a band-pass filter. As shown in Figure 5, on the first substrate 20 there are formed two hexagonal and two rectangular superconducting signal conductors 110 having a same length arranged at a constant interval in parallel with each other overlapping their half length to constitute a resonator of λ g /2, and a pair of superconducting signal conductors 12 and 13 launching and picking up the microwave to and from the both end superconducting signal conductors 110. These superconducting signal conductors 110, 12 and 13 can be formed of an a -axis orientated oxide superconductor thin film, for example an a -axis orientated Y 1 Ba 2 Cu 3 O 7-δ compound oxide superconductor thin film like the superconducting signal conductors shown in Figure 2. The band-pass filter having the above mentioned construction is used by cooling the superconducting signal conductor 10 and the superconductor ground conductor 30 so that the conductors 10 and 30 behave as superconductors. When microwave is launched into the signal conductor 10, magnetic field and electric field are generated. Since the superconducting signal conductor 10 and the superconductor ground conductor 30 are formed of an a -axis orientated oxide superconductor thin film, the magnetic field penetrates into the superconducting signal conductor 10 and the superconductor ground conductor 30 in the direction parallel to the c -plane, or perpendicular to the c -axis of the oxide superconductor crystal, so that the penetration depth becomes quite small. Therefore, the change of the resonating frequency with temperature becomes negligibly small, so that the band-pass filter has a stable characteristics. Figure 6 shows a pattern for a band rejection filter. As shown in Figure 6, on the first substrate 20 there are formed a signal launching conductor 12 across the substrate 20 and three L-shaped superconducting signal conductors 110 arranged at both sides of the signal conductor 12 alternately to constitute a resonator. The superconducting signal conductors 110 have a length of λ g /2 and are arranged at an interval of λ g /4. These superconducting signal conductors 12 and 110 can be formed of an α-axis orientated oxide superconductor thin film, for example an α-axis orientated Y 1 Ba 2 Cu 3 O 7-δ compound oxide superconductor thin film like the superconducting signal conductors shown in Figure 2. The band rejection filter having the above mentioned construction is used by cooling the superconducting signal conductor 10 and the superconductor ground conductor 30 so that the conductors 10 and 30 behave as superconductors. When microwave is launched into the signal conductor 10, magnetic field and electric field are generated. Since the superconducting signal conductor 10 and the superconductor ground conductor 30 are formed of an a -axis orientated oxide superconductor thin film, the magnetic field penetrates into the superconducting signal conductor 10 and the superconductor ground conductor 30 in the direction parallel to the c -plane, or perpendicular to the c -axis of the oxide superconductor crystal, so that the penetration depth becomes quite small. Therefore, the change of the resonating frequency with temperature becomes negligibly small, so that the band rejection filter has a stable characteristics. Figure 7 shows a pattern for a low-pass filter. As shown in Figure 7, on the first substrate 20 there are formed a pair of signal launching conductors 12 and 13 connected to each other across the substrate and two rectangular superconducting signal conductors 110 arranged in parallel with each other between the signal launching conductors 12 and 13 to constitute a resonator. These superconducting signal conductors 12, 13 and 110 can be formed of an a -axis orientated oxide superconductor thin film, for example an a -axis orientated Y 1 Ba 2 Cu 3 O 7-δ compound oxide superconductor thin film like the superconducting signal conductors shown in Figure 2. The low-pass filter having the above mentioned construction is used by cooling the superconducting signal conductor 10 and the superconductor ground conductor 30 so that the conductors 10 and 30 behave as superconductors. When microwave is launched into the signal conductor 10, magnetic field and electric field are generated. Since the superconducting signal conductor 10 and the superconductor ground conductor 30 are formed of an a -axis orientated oxide superconductor thin film, the magnetic field penetrates into the superconducting signal conductor 10 and the superconductor ground conductor 30 in the direction parallel to the c -plane, or perpendicular to the c -axis of the oxide superconductor crystal, so that the penetration depth becomes quite small. Therefore, the change of the resonating frequency with temperature becomes negligibly small, so that the low-pass filter has a stable characteristics. Figure 8 shows another pattern for a low-pass filter which has a rejection capability peak in the rejection band. As shown in Figure 8, on the first substrate 20 there are formed a pair of signal launching conductors 12 and 13 connected to each other across the substrate, and one rectangular superconducting signal conductor 110 arranged between the signal launching conductors 12 and 13 and a pair of rectangular superconducting signal conductors 112 and 113 at the inner end of the signal launching conductors 12 and 13 to constitute a resonator. These superconducting signal conductors 12, 13, 110, 112 and 113 can be formed of an a -axis orientated oxide superconductor thin film, for example an a -axis orientated Y 1 Ba 2 Cu 3 O 7-δ compound oxide superconductor thin film like the superconducting signal conductors shown in Figure 2. The low-pass filter having the above mentioned construction is used by cooling the superconducting signal conductor 10 and the superconductor ground conductor 30 so that the conductors 10 and 30 behave as superconductors. When microwave is launched into the signal conductor 10, magnetic field and electric field are generated. Since the superconducting signal conductor 10 and the superconductor ground conductor 30 are formed of a n a -axis orientated oxide superconductor thin film, the magnetic field penetrates into the superconducting signal conductor 10 and the superconductor ground conductor 30 in the direction parallel to the c -plane, or perpendicular to the c -axis, of the oxide superconductor crystal, so that the penetration depth becomes quite small. Therefore, the change of the resonating frequency with temperature becomes negligibly small, so that the low-pass filter has a stable characteristics. Figure 9 shows still another pattern for a low-pass filter which has two rejection capability peaks in the rejection band. As shown in Figure 9, on the first substrate 20 there are formed a pair of signal launching conductors 12 and 13 connected to each other across the substrate, and two different size T-shape superconducting signal conductors 110 and 111 arranged between the signal launching conductors 12 and 13 and a rectangular superconducting signal conductor 113 at the inner end of the signal launching conductor 13 to constitute a resonator. These superconducting signal conductors 12, 13, 110, 111 and 113 can be formed of an a -axis orientated oxide superconductor thin film, for example an a -axis orientated Y 1 Ba 2 Cu 3 O 7-δ compound oxide superconductor thin film like the superconducting signal conductors shown in Figure 2. The low-pass filter having the above mentioned construction is used by cooling the superconducting signal conductor 10 and the superconductor ground conductor 30 so that the conductors 10 and 30 behave as superconductors. When microwave is launched into the signal conductor 10, magnetic field and electric field are generated. Since the superconducting signal conductor 10 and the superconductor ground conductor 30 are formed of an a -axis orientated oxide superconductor thin film, the magnetic field penetrates into the superconducting signal conductor 10 and the superconductor ground conductor 30 in the direction parallel to the c -plane, or perpendicular to the c -axis of the oxide superconductor crystal, so that the penetration depth becomes quite small. Therefore, the change of the resonating frequency with temperature becomes negligibly small, so that the low-pass filter has a stable characteristics. The invention has thus been shown and described with reference to the specific embodiments. However, it should be noted that the present invention is in no way limited to the details of the illustrated structures but changes and modifications may be made within the scope of the appended claims.

Claims: A microwave component comprising a first dielectric substrate (20); a patterned superconducting signal conductor (10) provided at a first surface of said first dielectric substrate (20); and a superconducting ground conductor (30) provided at a second surface of said first dielectric substrate (20), said superconducting ground conductor being formed of an a-axis oriented oxide superconductor, means for providing a microwave signal applied to and launched on the superconducting signal conductor (10) for generating an electromagnetic field which penetrates into said superconducting signal conductor (10) characterised in that said superconducting signal conductor (10) is formed of an oxide superconductor thin film, the crystals of which being oriented in such a manner that their c-axes are parallel to the first surface of said substrate (20) thereby reducing penetration of the electromagnetic field into said superconducting signal conductor (10) in the direction parallel to the c-plane, or perpendicular to the c-axis of the oxide superconductor crystal. A microwave component as claimed in Claim 1, characterized in that the crystals of the oxide superconductor thin films (10, 30) are orientated in such a manner that the c -planes of the crystals are substantially parallel to the direction in which the electromagnetic field generated by the microwave signal penetrates into said superconducting signal conductor (10). A microwave component as claimed in Claim 1 or 2, characterized in that each of said oxide superconductor thin films (10, 30) is an a -axis orientated oxide superconductor thin film. A microwave component as claimed in anyone of Claims 1 to 3, characterized in that each of said superconducting signal conductor (10) and said superconducting ground conductor (30) is formed of a high critical temperature copper-oxide type oxide superconductor material. A microwave component as claimed in Claim 4, characterized in that each of said superconducting signal conductor (10) and said superconducting ground conductor (30) is formed of a material selected from the group consisting of a Y-Ba-Cu-O type compound oxide superconductor material, a Bi-Sr-Ca-Cu-O type compound oxide superconductor material, and a Tl-Ba-Ca-Cu-O type compound oxide superconductor material. A microwave component as claimed in anyone of Claims 1 to 5, characterized in that said dielectric substrate (20) is formed of a material selected from the group consisting of MgO, SrTiO 3, NdGaO 3 , Y 2 O 3 , LaAlO 3 , LaGaO 3 , Al 2 O 3 , and ZrO 2 . A microwave component as claimed in anyone of Claims 1 to 6, characterized in that said microwave component further comprises a second dielectric substrate (40) under said first dielectric substrate (20), and said superconducting signal conductor (10) is disposed on the first surface of said first dielectric substrate (20), and said superconducting ground conductor (30) is positioned between a first surface of said second dielectric substrate (40) and the second surface of said first dielectric substrate (20) so that said superconducting ground conductor (30) is disposed on said second surface of the first dielectric substrate (20). A microwave component as claimed in Claim 7, characterized in that said microwave component further includes a package having a hollow member (50a) having a top opening and a bottom opening, a top cover (50b) fitted to said top opening of said hollow member (50a), and a bottom cover (50c) fitted to said bottom opening of said hollow member (50a), a stacked assembly of said first dielectric substrate (20) and said second dielectric substrate (40) being located within said package in such a manner that the second surface of said second dielectric substrate (40) is in contact with the inner surface of said bottom cover (50c). A microwave component as claimed in claim 7 or 8, characterized in that said microwave component further includes a third dielectric substrate (40a), a second superconducting ground conductor (30a) formed to cover a whole of the first surface of said third dielectric substrate (40a), which has its second surface in contact with said superconducting signal conductor (10) of said first dielectric substrate (20), and a spring (70) located between said top cover (50b) and said third dielectric substrate (40a) so as to bring said third dielectric substrate (40a) into a close contact with the superconducting signal conductor (10) of said first dielectric substrate (20). A microwave component as claimed in anyone of Claims 1 to 9, characterized in that said microwave component is a microwave resonator. A microwave component as claimed in anyone of Claims 1 to 9, characterized in that said microwave component is a band-pass filter. A microwave component as claimed in anyone of Claims 1 to 9, characterized in that said microwave component is a band rejection filter. A microwave component as claimed in anyone of Claims 1 to 9, characterized in that said microwave component is a low-pass filter.

Inventors: HIGAKI KENJIRO, ITOZAKI HIDEO, MATSUURA TAKASHI, HIGAKI, KENJIRO, ITOZAKI, HIDEO, MATSUURA, TAKASHI
Applicants: SUMITOMO ELECTRIC INDUSTRIES, SUMITOMO ELECTRIC INDUSTRIES, LTD.
Application year: 1993
Main classification: H01L39
IPC codes: H01L39, H01P1, H01P7