Thermal protection circuit

Abstract: A bandgap type, thermal protection circuit for an integrated circuit does not require the use of a comparator and a voltage divider of the bandgap voltage. By contrast, the simplified thermal protection circuit of the invention utilizes a first transistor for mirroring the current flowing through the bandgap circuit through a second transistor that is functionally connected between the output node and ground. The control terminal of said second transistor is connected to a temperature dependent voltage derived from the bandgap circuit. The crossing point between the characteristic of such a temperature dependent voltage and of the V BE characteristic of said second transistor versus temperature determining the required transition on the output node.

Description: In integrated circuits (ICs), especially in power ICs, power dissipation may cause the device to reach relatively high temperatures. In order to avoid degradations phenomena or even worse destructive failures of ICs, because of excessive temperature, it is often necessary to integrate a dedicated protection circuit capable of "switching-off" at least a power output portion of the integrated circuit where power dissipation primarily occurs, whenever a condition of risk is reached. Basically, such a thermal protection circuit must have a precise triggering threshold, in terms of temperature reached by the integrated circuit, and a relatively small area requirement, for obvious economic reasons. Very many forms of thermal protection circuits are known in the art. Basically the desired function of the circuit is achieved by integrating a component (typically a diode) having a known temperature characteristic and using it as a temperature sensor. By comparing the temperature dependent voltage across the "sensor" with a reference voltage that is stable in temperature, a desired temperature triggering threshold can be implemented. Almost exclusively, a temperature stable, reference voltage is derived from a circuit which is commonly known as "BANDGAP" circuit. In practice, a fraction of the so-called bandgap voltage of the semiconductor is used as a stable reference in terms of temperature (see for example EP-A-0 511 561). A thermal protection circuit, made according to a known approach is depicted in Fig. 1. When the voltage (V - ) applied to a first input of the comparator C1 equals the voltage (V + ) applied to the other input of the comparator C1, a desired transition of the signal present on an output node (OUT) occurs. The triggering temperature T may be determined as follows: by simplifying and resolving for T: The circuit at the left of the dash line in Fig. 1 is a so-called bandgap circuit. The temperature independent voltage that is produced on the so-identified "BANDGAP" node, is divided by a precision voltage divider R 7 /R 8 and compared with the voltage present across the diode Q 344 . A current substantially identical to the current flowing through the bandgap circuit is forced through the diode Q 344 by the transistor Q 9 . At room temperature, the voltage on the inverting input (-) of the comparator C1 is lower than the voltage on the noninverting input (+) . With an increase of the temperature, the voltage across the diode Q 344 decreases with a known law. Therefore, at a certain temperature, the voltage across the diode Q 344 will become lower than the voltage that is applied to the inverting input (-), thus making the comparator C1 change state. As may be observed from the circuit analysis shown above, the precision of the triggering temperature is directly tied to the value of the resistance R 1 , which determines the current through the diode Q 344 , and to the current I s , which determines the V BE of the diode. Another known circuit is shown in Fig. 2. The triggering temperature T may be derived as follows: by simplifying and resolving for T: Differently from the circuit of Fig. 1, in this other circuit, a fraction of the bandgap voltage is compared with a voltage that is proportional to the difference between the V BE of a first transistor Q 3 and of a second transistor Q 4 of the bandgap circuit. This voltage difference increases with temperature while the bandgap voltage remains stable. Therefore, at the temperature indicated by the second equation of the analysis shown above, the comparator C1 will change state. Also in this case, the precision of the triggering temperature is tied directly to the value of R 1 and to the level of the current I S . As may be observed, the known circuits comprise a precise voltage divider (R 7 /R 8 ) for dividing the bandgap voltage produced by the homonymous circuit, through which a temperature-stable reference voltage is derived. Moreover, the known circuits employ a comparator (C1) to the inputs of which the temperature independent reference voltage derived from the bandgap circuit and a temperature dependent voltage are applied. The invention provides a thermal protection circuit which, though being based itself on a bandgap circuit, does not require the use of either a comparator or of a voltage divider for the bandgap voltage produced by the homonymous circuit. The circuit of the present invention permits a great simplification and a substantial saving in terms of the occupied area. Moreover, the circuit of the invention ensures equal or better performance than that of the definitely more complex circuits of the prior art. Essentially, in a thermal protection circuit of the invention, a current replica of the current that flows through a bandgap circuit is mirrored on a transistor that is functionally connected between the output node of the circuit and a ground node and which has a control terminal that is connected to a temperature dependent voltage of a value insufficient, at room temperature, to reach a threshold voltage of the transistor. When the characteristic of said temperature dependent voltage that is applied to the control terminal of the transistor and the characteristic of the inversely, temperature-dependent threshold voltage of the transistor cross, a condition for said transistor to enter a state of conduction occurs. When the transistor starts conducting, the voltage on the output node of the circuit drops to ground potential. The invention will be described by referring to the attached drawings, in which: Figure 1 , shows a bandgap type, thermal protection circuit made according to a known approach, as already described above. Figure 2 shows another known bandgap type, thermal protection circuit, as already described above. Figure 3 shows a bandgap type thermal protection circuit made according to the present invention. As may be observed from the circuit diagram of Fig. 3, the thermal protection circuit of the invention does not employ a comparator, as commonly employed in the prior art circuits (C1 of Figures 1 and 2). Moreover, the circuit does not employ a resistive voltage divider, as commonly employed in the prior art circuits, for dividing the bandgap voltage produced by the homonymous circuit, which, also in the circuit of the present invention, is depicted on the left hand side of the vertical dash line of Fig. 3. Qualitatively, the circuit of the invention functions tions in the following manner. The bandgap circuit produces by definition a collector current in the transistors Q 1 , Q 2 , Q 3 and Q 4 , which is given by the known relation (V BE2 - V BE1 )/R 1 and which is equal to: V T ln(10)/R 1 . By the use of transistor Q 9 , this current that flows through the bandgap circuit is mirrored and forced through the transistor Q 10 . This transistor Q 10 , is functionally connected between the output node (OUT) of the circuit and a common (ground) node of the circuit and has a control terminal (the base of the transistor in the example shown) connected to an intermediate node of a "voltage divider" that is formed by the resistances R 1 and R 2 and R 3 of the bandgap circuit itself. The base-emitter voltage of the transistor Q 10 is not sufficiently high at room temperature for permitting conduction through the transistor that remains in an OFF state and threfore does not allow the passage of the collector current of the transistor Q 9 . Along with an increase of the temperature, the base-emitter voltage of the transistor Q 10 increases (being proportional to: V T ln(10)), while the threshold voltage of the transistor Q 10 decreases. When these two characteristics, both dependent on the temperature but in an opposite way, cross each other, the transistor Q 10 passes from an OFF state to an ON state and therefore the voltage present on the output node OUT of the circuit goes from a high level (VCC) to a zero value (GND). The triggering temperature may be determined as follows: by simplifying and resolving for T: Performance, in terms of precision of the triggering voltage, of the circuit, has been studied by purposely varying the values of the resistances in a range comprised between +30% and -30% of a respective design value and, in order to simulate a variability of the value of the V BE of the transistors, the areas of the transistors have been doubled and halved in respect to a design value. All the nine circuits that have been tested, each corresponding to a specific combination of said modifications of the resistance and area values, have confirmed a substantial stability of the triggering temperature, notwithstanding a large variation of said fabrication parameters. The triggering temperature remained within a range of variation of ± 15°C about the design value. The absence of a specific voltage divider for the bandgap voltage reduces the incidence of deviation from design partition values in fabricating the integrated circuits. The remarkable simplification of the circuit of the invention as compared with known circuits is evident by comparing the figures. The saving of silicon area that may be achieved by employing two transistors (Q 9 and Q 10 ) in place of a comparator (C1) and of a precision voltage divider (R 7 /R 8 ), as commonly employed in the circuits of the prior art, is evident.

Claims: A thermal protection circuit for integrated circuits comprising a bandgap circuit capable of generating a temperature stable voltage, means capable of determining a transition of a signal produced on an output node (OUT) of the protection circuit upon the rising of the temperature above a certain triggering temperature, characterized by comprising means (Q9) for mirroring a current replica of the current flowing through said bandgap circuit through a first transistor (Q10) that is functionally connected between the output node (OUT) of the circuit and a ground and has a control terminal connected to a temperature dependent voltage of a value insufficient, at room temperature, to reach a threshold voltage of said first transistor; the crossing point between the characteristic of said temperature dependent voltage applied to the control terminal of said first transistor and of the characteristic of an inversely temperature dependent threshold voltage of said first transistor, determining a condition for the passage of said first transistor to a state of conduction, thus causing a transition to ground potential of the voltage present on said output node (OUT). A thermal protection circuit as defined in claim 1, wherein said means (Q9) are composed of a second transistor driven by the same voltage driving the transistors forming a current mirror of the bandgap circuit, said second transistors being functionally connected between a supply node (VCC) of the circuit and said first transistor (Q10).

Inventors: PENNISI ALESSIO, PENNISI, ALESSIO
Applicants: SGS THOMSON MICROELECTRONICS, SGS-THOMSON MICROELECTRONICS S.R.L.
Application year: 1993
Main classification: H02H5
IPC codes: H02H5