Semiconductor light-emitting device

Abstract: A semiconductor light-emitting element includes a semiconductor substrate (11) having a first conductivity type, a lower cladding layer (13) formed on the semi-conductor substrate (11), and constituted by an InGaAℓP-based compound having the first conductivity type, an active layer (14) formed on the lower cladding layer (13), and constituted by a member selected from the group consisting of GaAs, GaAℓAs, and InGaAs, and an upper cladding layer (15) formed on the active layer (14), and constituted by the InGaAℓP-based compound having a second conductivity type, wherein the InGaAℓP-based compound is represented by a formula In y (Ga 1-x Aℓx) y P wherein x is 0.3 to 0.7 and y is 0.45 to 0.55. The element also includes a doped active layer and a heterostructure in which the valence band offsets are larger than the conduction band offsets.

Description: The present invention relates to a semiconductor light-emitting device using a compound semiconductor material and, more particularly, to a semiconductor light-emitting element, e.g., a semiconductor laser, having a sufficiently large band gap between an active layer and a cladding layer. Recently, development in a semiconductor laser has been widely performed aiming at an application to an optical information processing optical source, e.g., an optical disk system and a high-speed laser printer. Especially, a GaAℓAs-based semiconductor laser in which an active layer is constituted by GaAs and a cladding layer is constituted by GaAℓAs and which has an oscillation wavelength in a 0.8 µm wavelength band is under development as a promising semiconductor laser. Some of such semiconductor lasers already have high reliability and are put into practical use. However, the GaAℓAs-based semiconductor laser does not necessarily have sufficiently good temperature characteristics when it is used in an automobile, or operated in a severe atmosphere or with a high output. For this reason, limitations such as use at a temperature near room temperature of 100°C or less are imposed. In order to solve these problems, it is effective to increase the band gap difference between the active and cladding layers. For example, the Aℓ atomic ratio x of Ga 1-x Aℓ x As, which is usually 0.4, is increased to 0.8 or more. However, problems still arise such that impurity doping becomes difficult, or transition contributing to electric conduction becomes indirect X transition having a small band gap change with respect to the Aℓ atomic ratio. Hence, the Aℓ atomic ratio cannot be increased. In this manner, in the conventional GeAℓAs-based semiconductor laser, the band gap difference between the active and cladding layers cannot be sufficiently increased, and the semiconductor laser is limited to the operation at a temperature near room temperature of 100°C or less. It is an object of the present invention to provide a semiconductor light-emitting element having improved temperature characteristics and capable of oscillation at an ultra-high temperature. It is another object of the present invention to provide a semiconductor light-emitting element whose element voltage can be decreased. According to the first aspect of the present invention, there is provided a semiconductor light-emitting element comprising: a semiconductor substrate having a first conductivity type; a lower cladding layer formed on the semiconductor substrate, and constituted by an InGaAℓP-based compound having the first conductivity type; an active layer formed on the lower cladding layer, and constituted by a material selected from the group consisting of GaAs, GaAℓAs, and InGaAs; and an upper cladding layer formed on the active layer, and constituted by the InGaAℓP-based compound having a second conductivity type, and said InGaAℓP compound constituting the cladding layers is represented by a formula In y (Ga 1-x Aℓ x ) y P wherein x is 0.3 to 0.7 and y is 0.45 to 0.55 such that the bandgap difference between the cladding layers and the active layer is 0.7 eV or more. The active layer may have the first conductivity type. Preferably, an intermediate band gap layer is interposed between the active and second cladding layers, the intermediate band gap layer having an intermediate band gap of band gaps of the active and second cladding layers, or an intermediate band gap layer is interposed between the active and second cladding layers, the intermediate band gap layer having an intermediate band gap of band gaps of the active and second cladding layers, and an intermediate band gap layer is interposed between the active and first cladding layers, the intermediate band gap layer having an intermediate band gap of band gaps of the active and first cladding layers. This invention can be more fully understood from the following detailed description when taken in conjunction with the accompanying drawings, in which: Fig. 1 is a sectional view schematically showing the structure of a semiconductor laser according to the first embodiment of the present invention; Fig. 2 is a graph showing the relationship between the Aℓ atomic ratio and the band gap of GaAℓAs constituting the cladding layer of a conventional semiconductor laser; Fig. 3 is a graph showing the relationship between the Aℓ atomic ratio and the band gap of InGaAℓP constituting the cladding layer of the semiconductor laser shown in Fig. 1; Fig. 4 is a graph showing the relationship between the band gap difference between the active and cladding layers and a characteristic temperature; Fig. 5 is a sectional view schematically showing the structure of a semiconductor laser according to the second embodiment of the present invention; Fig. 6 is a sectional view schematically showing the structure of a semiconductor laser according to the third embodiment of the present invention; Fig. 7 is a sectional view schematically showing the structure of a semiconductor laser according to the fourth embodiment of the present invention; Figs. 8A and 8B are schematic energy band diagrams of p- and n-type active layers with reference to a p-type cladding layer; Fig. 9 is a sectional view schematically showing the structure of a semiconductor laser according to the fifth embodiment of the present invention; Figs. 10A and 10B are schematic energy band diagrams of active and p-type cladding layers; and Fig. 11 is a graph showing the relationship between the Aℓ atomic ratio and the characteristic temperature. The gist of the present invention is that the band gap difference between the active and cladding layers is increased, that a material system capable of providing good light-emitting characteristics is chosen, and that a structure that lowers the heterobarriers formed between the active and cladding layers when such a material system is used is realized. More specifically, in a semiconductor light-emitting device according to the first embodiment of the present invention, the active layer is constituted by GaAs, GaAℓAs, or InGaAs, and the cladding layers are constituted by an InGaAℓP-based compound. The InGaAℓP-based compound constituting the cladding layers is represented by a chemical formula In y (Ga 1-x Aℓ x ) y P wherein x is 0.3 to 0.7 and preferably 0.5 to 0.7 and y is 0.45 to 0.55 and preferably 0.49 to 0.52. If x is less than 0.3, the band gap difference between each cladding layer and the active layer cannot be increased; if x exceeds 0.7, then doping control of p-type impurity becomes difficult, which is not preferable. In the first embodiment of the present invention, when x in the chemical formula In y (Ga 1-x Aℓ x ) y P is set to 0.3 or more, the band gap difference between each cladding layer and the active layer can be increased to 0.7 eV or more. Then, a semiconductor light-emitting element capable of operating up to a temperature in a high temperature range exceeding 300°C and having a small operating current can be obtained. Since an InGaAℓP-based compound is lattice-matched with GaAs, crystal growth using a material system of this type can be realized in accordance with MOCVD or the like. A semiconductor light-emitting device according to the second embodiment of the present invention has a double heterojunction structure in which an active layer is sandwiched between p- and n-type cladding layers having different nonmetallic elements from that of the active layer. The active and cladding layers are combined such that at least half of the band incontinuous values are distributed to the valence band. The conductivity type of the active layer is the n type. In such a combination of the active and cladding layers the active layer is constituted by GaAs, GaAℓAs, or InGaAs, and the cladding layers are constituted by an InGaAℓP-based material system represented by the formula described above. When the band gap difference between the active layer and each cladding layer is increased according to the first embodiment of the present invention, hole injection from the p-type cladding layer to the active layer can be undesirably interfered with by the presence of the heterobarrier based on the band gap difference, and the device voltage can be increased. In contrast to this, according to the second embodiment of the present invention, since the active layer is an n-type layer, even if the band gap difference between the active layer and each cladding layer is large, hole injection from the p-type cladding layer to the active layer is performed in a recombination state through the p-n junction. Therefore, the heterobarrier against the holes can be effectively lowered by the bend of the band in the p-n junction, so that hole injection from the p-type cladding layer to the active layer can be smoothly performed. A semiconductor light-emitting device according to the third embodiment of the present invention has a double heterojunction structure in which an active layer is sandwiched between p- and n-type cladding layers according to claim 1. Between active and p-type cladding layers, an intermediate band gap layer having an intermediate band gap of the band gaps of the active and p-type cladding layers is interposed. Alternatively, between the active and p-type cladding layers, an intermediate band gap layer having an intermediate band gap of the band gaps of the active and p-type cladding layers is interposed, and between the active and n-type cladding layers, an intermediate band gap layer having an intermediate band gap of the band gaps of the active and n-type cladding layers is interposed. These intermediate band gap layers can be constituted by, e.g., a material represented by In p Ga 1-p P (p: 0.3 - 0.7). In this manner, when a layer having an intermediate band gap of the band gaps of the p-type cladding and active layers is interposed between the p-type cladding and active layers, the heterobarrier can be effectively lowered, and hole injection from the p-type cladding layer to the active layer can be smoothly performed. Therefore, an increase in element voltage caused by the presence of the heterobarrier can be prevented. Various preferred embodiments of the present invention will be described with reference to the accompanying drawings. Fig. 1 is a sectional view showing the schematic structure of a semiconductor layer according to the first example of the present invention. Referring to Fig. 1, reference numeral 11 denotes an n-type GaAs substrate on which an n-type GaAs buffer layer 12 is formed. A double heterojunction structure constituted by the following layers is formed on the buffer layer 12. (a) a lower cladding layer 13 constituted by n-type In 0.5 (Ga 0.3 Aℓ 0.7 ) 0.5 P (Si-doped, 3 to 5 × 10 17 cm -3 ) (b) an active layer 14 constituted by GaAs (nondoped) (c) a first upper cladding layer 15 constituted by p-type In 0.5 (Ga 0.3 Aℓ 0.7 ) 0.5 P (Zn-doped, 3 to 5 × 10 17 cm -3 ) (d) an etching stopper layer 16 constituted by p-type In 0.5 Ga 0.5 P (Zn-doped, 3 to 5 × 10 17 cm -3 ) (e) a second upper cladding layer 17 constituted by p-type In 0.5 (Ga 0.3 Aℓ 0.7 ) 0.5 P (Zn-doped, 3 to 5 × 10 17 cm -3 ) The second upper cladding layer 17 is formed to have a stripe or ridge shape, and a capping layer 18 (Zn-doped, 1 × 10 18 cm -3 ) constituted by p-type In 0.5 Ga 0.5 P is formed on the second upper cladding layer 17. The atomic ratios of In, Ga, and Aℓ are determined such that the lattice constants of the respective layers 13 to 17 constituting the double heterojunction and that of the capping layer 18 are equal to that of the GaAs substrate 11 and that the band gap energies of the lower cladding layer 13 and the first upper cladding layer 15 are higher than that of the active layer 14. A contact layer 20 (Zn-doped, 5 × 10 18 cm -3 ) constituted by p-type GaAs is formed on the side portions of the second upper cladding layer 17 and on the capping layer 18. A p-type side electrode 21 is formed on the upper surface of the contact layer 20, and an n-type side electrode 22 is formed on the lower surface of the substrate 11. Note that all the layers excluding the p- and n-type side electrodes 21 and 22 are formed in accordance with Metal Organic Chemical vapor Deposition (MOCVD). Current narrowing in the semiconductor laser described above shown in Fig. 1 is performed by utilizing a difference in voltage drop between the p-type InGaAℓP/p-type GaAs heterojunction and the p-type InGaAℓP/p-type InGaP/p-type GaAs heterojunction (when a p-type InGaP layer having an intermediate band gap is sandwiched, the barrier is lowered, and the voltage drop can be decreased). That is, the capping layer 18 constituted by p-type InGaP is provided only at the ridge portion, thereby narrowing the current. Optical waveguide is performed by the first and second upper cladding layers 15 and 17. A thickness H 1 of the lower cladding layer 13 is 1.0 µm, a thickness d of the active layer 14 is 0.04 µm, a total thickness H 2 of the first and second upper cladding layers 15 and 17 at the ridge portion through the etching stopper layer 16 is 1.0 µm, the thickness of the etching stopper layer 16 is 0.01 µm, and a width W of the bottom portion of the mesa portion is 5 µm. Note that the buffer layer 12 is required to improve the quality of the InGaAℓP-based crystal formed on the GaAs substrate 11 and is not always needed. In order to obtain a laser having a small overflow and excellent temperature characteristics, the structure parameters, especially the composition of each cladding layer in this case, must be set to fall within a predetermined range, and the enumerated values are examples. Optimization of the composition (Aℓ atomic ratio) of the cladding layer will be described. In order to oscillate a semiconductor laser at room temperature and to operate it up to a temperature near 100°C, it is known that the band gap difference between the active and cladding layers must be 350 meV or more. Assuming that the factor of overflow caused by thermal turbulence from the active layer to the cladding layer is the Maxwell-Boltzmann distribution, i.e., exp(-ΔE/kT), when the operation up to the range exceeding 300°C is considered, a band gap difference of 700 meV which is almost twice that described above is needed. Fig. 2 is a graph showing the relationship between the Aℓ atomic ratio and the band gap of the GaAℓAs-based material. Referring to the graph of Fig. 2, the hatched portion represents a region where doping is difficult. When the active layer is constituted by GaAs, the band gap of the cladding layer must be 2.1 eV or more. The Aℓ atomic ratio of GaAℓAs corresponding to this value is 0.8 or more, as shown in Fig. 2. However, this value falls in the region where doping is difficult, and problems, e.g., an increase in element resistance and degradation in reliability are caused. For this reason, when GaAℓAs is adopted as the material of the cladding layer, it is difficult to realize the above band gap difference. Fig. 3 is a graph showing the relationship between the Aℓ atomic ratio and the band gap of the InGaAℓP-based material. As shown in Fig. 3, when the Aℓ atomic ratio is set to 0.3 or more, a band gap of 2.1 eV can be obtained. When the Aℓ atomic ratio is up to 0.7, Γ transition is dominant, and the band gap can be increased with a good linearity with respect to the Aℓ atomic ratio. When the Aℓ atomic ratio is 0.7, a band gap of 2.3 eV or more can be obtained. Fig. 4 is a graph showing the relationship between the band gap difference between the GaAs active and cladding layers and a characteristic temperature (T 0 ) at a temperature of 100°C. The broken curve represents a case wherein the cladding layer is constituted by GaAℓAs, and the solid curve represents a case wherein the cladding layer is constituted by InGaAℓP. The dependency of the characteristic temperature on the band gap difference is different between the GaAℓAs cladding layer and the InGaAℓ cladding layer due to the different band incontinuous relationships of GaAℓAs and InGaAℓP with GaAs. When the band gap is the same, InGaAℓP has a slightly low characteristic temperature. However, when the Aℓ composition ratio is set to 0.3 or more, a characteristic temperature (T 0 ) that cannot be achieved with GaAℓAs can be obtained. When the active layer is constituted by GaAℓAs, since the band gap of the active layer tends to be increased, the Aℓ atomic ratio of the cladding layer is also preferably increased. When the active layer is constituted by InGaAs, although the band gap difference tends to be increased, factors, e.g., Auger recombination, that degrade the temperature characteristics are also increased in the InGaAs light-emitting process. Therefore, the Aℓ atomic ratio of the InGaAℓP cladding layer is preferably 0.3 or more. In this manner, the semiconductor laser shown in Fig. 1, in which the Aℓ atomic ratio of the cladding layer is set to fall within the predetermined range, continuously oscillated at an oscillation threshold current (I th ) of 32 mA when the resonator length was 400 µm. The characteristic temperature (T 0 ) did not change up to a temperature (T) of 200°C and was 190 K, which substantially coincided with the value determined by the temperature dependency of the gain of the active layer. This indicates that overflow of carriers injected from the active layer to the cladding layer is suppressed as designed. As a result, continuous oscillation was observed at a temperature up to 270°C, and pulse oscillation was observed at a temperature up to 320°C. Regarding a high-output operation, according to the semiconductor laser in which asymmetric coating was performed, a maximum optical output of 50 mW was obtained. Regarding reliability, a stable operation of 1,000 hours or more was observed at 80°C and 30 mW. In these results, no problem due to the As-based active layer and the P-based cladding layer was observed. It is estimated that interface deposition switching is performed very well by MOCVD, and that continuous growth is performed. Fig. 11 is a graph showing the relationship between the Aℓ atomic ratio of the cladding layer and the characteristics temperature of the semiconductor laser. As shown in Fig. 11, when the Aℓ atomic ratio of InGaAℓP constituting the cladding layer falls within the range of 0.3 to 0.7, high characteristic temperature can be obtained. Fig. 5 is a sectional view showing the schematic structure of a semiconductor laser according to the second example of the present invention. Referring to Fig. 5, reference numeral 31 denotes an n-type GaAs substrate on which an n-type GaAs buffer layer 32 is formed. A double heterojunction structure constituted by the following layers is formed on the buffer layer 32. (a) a lower cladding layer 33 constituted by n-type In 0.5 (Ga 0.3 Aℓ 0.7 ) 0.5 P (Si-doped, 3 to 5 × 10 17 cm -3 ) (b) an active layer 34 constituted by Ga 0.9 Aℓ 0.1 As (nondoped) (c) a first upper cladding layer 35 constituted by p-type In 0.5 (Ga 0.3 Aℓ 0.7 ) 0.5 P (Zn-doped, 3 to 5 × 10 17 cm -3 ) (d) an etching stopper layer 36 constituted by p-type In 0.5 Ga 0.5 P (Zn-doped, 3 to 5 × 10 17 cm -3 ) (e) a second upper cladding layer 37 constituted by p-type In 0.5 (Ga 0.3 Aℓ 0.7 ) 0.5 P (Zn-doped, 3 to 5 × 10 17 cm -3 ) The second upper cladding layer 37 is formed to have a stripe shape, and a capping layer 38 (Zn-doped, 1 × 1018 cm -3 ) constituted by p-type In 0.5 Ga 0.5 P is formed on the second upper cladding layer 37. An n-type GaAs current narrowing layer 39 is formed on each side portion of the second upper cladding layer 37, and a contact layer 40 (Zn-doped, 5 × 10 18 cm -3 ) constituted by p-type GaAs is formed on the current narrowing layer 39 and the capping layer 38. A p-type electrode 41 is formed on the upper surface of the contact layer 40, and an n-type electrode 42 is formed on the lower surface of the substrate 31. Optical waveguide is performed by the first and second upper cladding layers 35 and 37 having the stripe and mesa shapes, respectively, in a similar manner to that of the first example. A thickness H 1 of the lower cladding layer 33, a thickness d of the active layer 34, a total thickness H 2 of the first and second upper cladding layers 35 and 37 at the ridge portion through the etching stopper layer 36, the thickness of the etching stopper layer 36, and a width W of the bottom portion of the mesa portion were set to the same as those of the first example shown in Fig. 1. In the semiconductor laser according to the second example, the band gap difference between the active and cladding layers can be sufficiently increased by using InGaAℓP to constitute the cladding layers, in the same manner as in the first example. Continuous oscillation having an oscillation frequency of 780 nm was obtained at 200°C or more. Fig. 6 is a sectional view showing the schematic structure of a semiconductor layer according to the third example of the present invention. Referring to Fig. 6, reference numeral 51 denotes an n-type GaAs substrate on which a buffer layer 52 constituted by n-type GaAs is formed. A double heterojunction structure constituted by the following layers is formed on the buffer layer 52. (a) a cladding layer 53 constituted by n-type In 0.5 (Ga 0.3 Aℓ 0.7 ) 0.5 P (Si-doped, 3 to 5 × 10 17 cm -3 ) (b) an active layer 54 constituted by In 0.05 Ga 0.95 As (nondoped), a cladding layer 55 constituted by p-type In 0.5 (Ga 0.3 Aℓ 0.7 ) 0.5 P (Zn-doped, 3 to 5 × 10 17 cm -3 ) A capping layer 58 (Zn-doped, 1 × 10 18 cm -3 ) constituted by p-type In 0.5 Ga 0.5 P and a current narrowing layer 59 constituted by n-type GaAs and having a stripe opening are formed on the double heterojunction structure. A contact layer 60 (Zn-doped, 5 × 10 18 cm -3 ) constituted by p-type GaAs is formed on the current narrowing layer 59 and the capping layer 58. A p-type electrode 61 is formed on the upper surface of the contact layer 60, and an n-type electrode 62 is formed on the lower surface of the substrate 51. In the semiconductor laser according to the third example, the band gap difference between the active and cladding layers can be sufficiently increased by using InGaAℓP to constitute the cladding layers, in the same manner as in the first example. Continuous oscillation having an oscillation frequency of 950 nm was obtained at 300°C or more. Fig. 7 a sectional view schematically showing the structure of a semiconductor laser according to the fourth example of the present invention. The same portions as in Fig. 1 are denoted by the same reference numerals, and a detailed description thereof will be omitted. The fourth example is different from the first example in that the active layer is an n-type layer. More specifically, in the structure same as that of Fig. 1, an active layer 74 is nondoped but has an n conductivity type. Conditions excluding this, e.g., the composition of the respective layers, the film thicknesses, and doses were set to the same as in the first embodiment. In the first example described above, since the band gap difference between the active and cladding layers is increased, a heterobarrier based on the large band gap between GaAs and InGaAℓP is formed. Hole injection from the p-type cladding layer to the active layer is interfered with by the presence of the heterobarrier, thus undesirably increasing the element voltage. Especially, when a large band discontinuity is present in the valence band, a large heterospike is caused. In addition, since a P-As interface having different Group V elements is formed, hole injection is interfered with, and degradation starting from the interface occurs. According to the fourth example, the conductivity type of the active layer is set to n type, thereby solving these problems. The relationship between the conductivity type of the active layer and hole injection will be described. Figs. 8A and 8B are energy band diagrams of p- and n-type active layers with reference to a p-type cladding layer. The bias is applied in the forward direction. As shown in Fig. 8A, when the active layer is of the p type, a heterobarrier based on a large band gap difference appears to interfere with hole injection to the active layer, so that the rise voltage and resistance of the element are increased, considerably degrading the element characteristics. This tendency becomes conspicuous especially when the band gap difference between the active and cladding layers exceeds 0.7 eV, thus increasing the resistance of the element. As shown in Fig. 8B, when the active layer is of the n type, a p-n junction is present between the active and cladding layers. In this case, because of the bend of the band having the depletion layer of the p-n junction as the center, the heterobarrier against the holes can be effectively lowered. For this reason, hole injection to the active layer is smoothly performed, and the heterobarrier does not interfere with hole injection. Although the relationship shown in the energy band diagrams of Figs. 8A and 8B changes depending on the Aℓ atomic ratios and the carrier concentrations of the respective layers, it is largely determined by the conductivity type of the active layer, as described above. Therefore, it is preferable that the conductivity type of the active layer is set to the n type. In this manner, the semiconductor laser shown in Fig. 7, in which the active layer was set to the n type, continuously oscillated at a threshold current of 25 mA when the resonator length was 400 µm. The element resistance was 3 Ω, and the voltage was as low as 1.8V even at 20 mW. The characteristic temperature did not change up to a temperature of 200°C and was 205 K, which substantially coincided with the value determined by the temperature dependency of the gain of the active layer. This indicates that overflow of carriers injected from the active layer to the cladding layer is suppressed as designed. As a result, continuous oscillation was observed at a temperature up to 280°C, and pulse oscillation was observed at a temperature up to 350°C. Regarding a high-output operation, according to the semiconductor laser in which asymmetric coating was performed, a maximum optical output of 65 mW was obtained. Regarding reliability, a stable operation of 3,000 hours or more was observed at 80°C and 30 mW. In these results, no problem due to the As-based active layer and the P-based type cladding layer was observed. It is estimated that interface deposition switching is performed very well by MOCVD, and that continuous growth is performed. The above-mentioned effects obtained by setting the active layer to the n type are not limited to the material system used in the respective examples, but appear when the nonmetallic elements of the active and cladding layers are different and the band discontinuity of the valence band, of the band discontinuities of the active layers and the p-based cladding layer (upper cladding layer), becomes large. Especially, when the heterojunction structure is designed such that at least half of the band discontinuity values are distributed to the valence band, the heterospike becomes excessively large, the holes are not injected to the active layers, and laser oscillation does not occur. In this case, when the active layer is set to the n type, as in this example, smooth hole injection from the P-based cladding layer (upper cladding layer) to the active layer is enabled. Also, the active layer is not necessarily of the n type. In some cases, even if the active layer is of the p type, as far as the carrier concentration of the active layer is 3 to 5 x 10 17 cm -3 , a similar improvement to that obtained when the active layer is of the n type can be obtained. Fig. 9 is a sectional view schematically showing the structure of a semiconductor laser according the fifth example of the present invention. The same portions as in Fig. 1 are denoted by the same reference numerals, and a detailed description thereof will be omitted. The fifth example is different from the first example in that, between an active layer 94 and a lower cladding layer 13, a layer having an intermediate band gap of the band gaps of the active and lower cladding layers 94 and 13 is provided, and between the active layer 94 and an upper cladding layer 15, a layer having an intermediate band gap of the band gaps of the active and upper cladding layers 94 and 15 is provided. More specifically, an optical guide layer 93 (Si-doped, 3 to 5 x 10 17 cm -3 ) constituted by n-type In 0.5 Ga 0.5 P is provided between the active layer 94 and the n-type lower cladding layer 13, and an optical guide layer 95 (Zn-doped, 3 to 5 x 10 17 cm -3 ) constituted by p-type In 0.5 Ga 0.5 P is provided between the active layer 94 and the upper cladding layer 15. The thickness of the active layer 94 was set to 0.03 µm, and other conditions, e.g., the thicknesses of other layers and the width of the bottom portion of the mesa portion, were set to the same as in the first embodiment. In the fifth example, an increase in element voltage caused by the presence of the heterobarrier based on the band gap difference between the active and cladding layers is prevented, in the same manner as in the fourth example. In order to sufficiently decrease the element voltage, the element structure, especially the optical guide layer provided between the active layer and the p-type upper cladding layer and constituted by InGaP in this case, is significant. Hole injection to the InGaP and active layers will be described. Figs. 10A and 10B are energy band diagrams of the active layer and the p-type upper cladding layer. The bias is applied in the forward direction. As shown in Fig. 10A, when the active layer and the p-type upper cladding layer directly form a junction, a heterobarrier based on a large band gap difference appears to interfere with hole injection, so that the rise voltage and resistance of the element are increased, considerably degrading the element characteristics. This tendency becomes conspicuous especially when the band gap difference between the active and cladding layers exceeds 0.7 eV, thus increasing the resistance of the element. As shown in Fig. 10B, when an InGaP layer is provided between the active layer and the p-type upper cladding layer, since InGaP has an intermediate band gap of the band gaps of GaAs and InGaAℓP, the heterobarrier can be effectively lowered. For this reason, hole injection to the active layer is smoothly performed, and the heterobarrier does not interfere with hole injection. The relationship shown in the energy band diagrams of Figs. 10A and 10B changes depending on the Aℓ atomic ratios and the carrier concentrations of the respective layers and can be improved by setting the conductivity type of the active layer to the n type. However, since the InGaP layer can be provided with a good reproducibility and the As-P interface can be formed without Aℓ, the InGaP layer is effective also to improve the reliability. In this example, the n-type InGaP layer is provided in addition to the p-type InGaP layer from the viewpoint of high reliability. In mode design, the n-type InGaP layer is also considered as an optical guide layer. In this manner, the semiconductor laser shown in Fig. 9, in which between the active layer and the respective p-type cladding layers the InGaP layers having intermediate band gaps of the band gaps of the active layer and the corresponding p-type cladding layers are provided, continuously oscillated at a threshold current of 19 mA when the resonator length was 400 µm. The element resistance was 2.5 Ω, and the voltage was as low as 1.7V even at 20 mW. The characteristic temperature did not change up to a temperature of 200°C and was 215 K, which substantially coincided with the value determined by the temperature dependency of the gain of the active layer. This indicates that overflow of carriers injected from the active layer to the cladding layer is suppressed as designed. As a result, continuous oscillation was observed at a temperature up to 300°C, and pulse oscillation was observed at a temperature up to 400°C. Regarding a high-output operation, according to the semiconductor laser in which asymmetric coating was performed, a maximum optical output of 150 mW was obtained. Regarding reliability, a stable operation of 10,000 hours or more was observed at 80°C and 50 mW. In these results, no problem due to the As-based active layer and the P-based cladding layer was observed. It is estimated that interface deposition switching is performed very well by MOCVD, and that continuous growth is performed. The present invention is not limited to the embodiments described above, and can be applied to, e.g., a structure using a GaAℓAs active layer having a relatively high Aℓ atomic ratio, a quantum well structure, and a structure positively employing distortion, as far as a sufficiently large band gap difference with respect to the cladding layer can be obtained. Furthermore, a layer containing a material, e.g., As, B, N, Zn, or Se, can be used as the cladding layer. The present invention is not limited to a semiconductor laser but can also be applied to a light-emitting diode having a double heterojunction structure. Various changes and modifications may be made without departing from the scope of the invention. As has been described above in detail, according to the present invention, a cladding layer having a sufficiently large band gap difference with respect to an active layer can be provided, and the temperature characteristics are greatly improved, thus realizing an excellent semiconductor light-emitting element that can be sufficiently used at a temperature of 300°C or more. Also, according to the present invention, factors interfering with hole injection by the presence of the heterobarrier based on the band gap difference between the active and cladding layers can be eliminated, and the element voltage can be decreased.

Claims: A semiconductor light-emitting element comprising: a semiconductor substrate (11) having a first conductivity type; a lower cladding layer (13) formed on said semiconductor substrate (11), and constituted by an InGaAℓP-based compound having the first conductivity type; an active layer (14, 74, 94) formed on said lower cladding layer (13), and constituted by a material selected from the group consisting of GaAs, GaAℓAs, and InGaAs; and an upper cladding layer (15) formed on said active layer (14), and constituted by said InGaAℓP-based compound having a second conductivity type, and said InGaAℓP compound constituting the cladding layers is represented by a formula In y (Ga 1-x Aℓ x ) y P wherein x is 0.3 to 0.7 and y is 0.45 to 0.55 such that the bandgap difference between the cladding layers and the active layer is 0.7 eV or more. An element according to claim 1, characterized in that x is 0.5 to 0.7. An element according to claim 1, characterized in that said semiconductor substrate (11) is constituted by GaAS having the first conductivity type. An element according to claim 1, characterized in that another stripe-shaped upper cladding layer (17) is formed on said upper cladding layer (15) and constituted by the same material as that of said upper cladding layer (15). An element according to claim 1, characterized in that another stripe-shaped upper cladding layer (37) is formed on said upper cladding layer (35) and constituted by the same material as that of said upper cladding layer (35), and a current narrowing layer (39) constituted by GaAs having the first conductivity type is formed on a side portion of said another upper cladding layer (37). An element according to claim 1, characterized in that a current narrowing layer (59) constituted by GaAs having the first conductivity type and having a stripe-shaped opening is formed on said upper cladding layer (55). An element according to any one of the preceding claims, wherein said active layer (74, 94) has the first conductivity type. An element according to claim 7, characterized in that an intermediate band gap layer (95) is interposed between said active and second cladding layers (94, 15), said intermediate band gap layer (95) having an intermediate band gap of band gaps of said active and second cladding layers (94, 15), or an intermediate band gap layer (95) is interposed between said active and second cladding layers (94, 15), said intermediate band gap layer (95) having an intermediate band gap of band gaps of said active and second cladding layers (94, 15), and an intermediate band gap layer (93) is interposed between said active and first cladding layers (94, 13), said intermediate band gap layer (93) having an intermediate band gap of band gaps of said active and first cladding layers (94, 13). An element according to claim 8, characterized in that each of said intermediate band gap layers (93, 95) is constituted by a material represented by a formula In p Ga 1-p P (p: 0.3 - 0.7).

Inventors: HATAKOSHI GENICHI, ITAYA KAZUHIKO, NISHIKAWA YUKIE, NITTA KOICHI, SUGAWARA HIDETO, SUZUKI MARIKO, HATAKOSHI, GENICHI, ITAYA, KAZUHIKO, NISHIKAWA,YUKIE, NITTA, KOICHI, SUGAWARA,HIDETO, SUZUKI,MARIKO, HATAKOSHI, GENICHI, C/O INTELLECTUAL PROPERTY DIV., ITAYA, KAZUHIKO, C/O INTELLECTUAL PROPERTY DIV., Nishikawa,Yukie , c/o Intellectual Property Div., NITTA, KOICHI, C/O INTELLECTUAL PROPERTY DIV., SUGAWARA,HIDETO,C/O INTELLECTUAL PROPERTY DIV., SUZUKI,MARIKO,C/O INTELLECTUAL PROPERTY DIV.
Applicants: TOSHIBA KK, KABUSHIKI KAISHA TOSHIBA
Application year: 1993
Main classification: H01S3
IPC codes: H01S5, H01L33