Method of forming single-crystalline thin film

Abstract: Disclosed herein is a method of forming a single-crystalline thin film having excellent crystallinity on a base material without depending on the material for and crystallinity of the base material. In this method, a base material (1) is provided thereon with a mask (2) which can prevent chemical species contained in a vapor phase (3) from adhering to the base material. The base material (1) is continuously moved along arrow A, to deliver a portion covered with the mask (3) into the vapor phase (3) for crystal growth. Thus, a thin film is successively deposited on the portion of the base material (1), which is delivered from under the mask (2), from the vapor phase (3). A crystal growth end is formed on a boundary region between a portion of the base material which is covered with the mask and that which is exposed to the vapor phase, so that a crystal having the same orientation as the growth end is grown on a portion of the base material newly exposed by the movement.

Description: Field of the Invention The present invention relates to a method of forming a single-crystalline thin film on a base material, and more particularly, it relates to a method for forming a single-crystalline thin film consisting essentially of an oxide superconductor on an arbitrary base material. Throughout the specification, the term "single-crystalline" means a dominative state of a crystal having a specific orientation. This term is applied not only to a single crystal having only a specific orientation but to a crystalline solid containing a mixture of crystals having different orientations with a dominative state of a crystal having a specific orientation. Description of the Background Art In a technique of fabricating a semiconductor device, various methods such as liquid phase epitaxy (LPE), organometallic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE) and ion beam epitaxy (IBE) are employed as methods of forming thin films of semiconductor single crystals. These methods, which are capable of forming high quality single-crystalline thin films, are indispensable techniques for fabrication of a semiconductor device. In the field of superconduction, methods of forming single-crystalline thin films have been studied since discovery of Y, Bi and Tl oxide superconducting materials having critical temperatures of 90 K, 108 K and 125 K which are higher than the liquid nitrogen temperature of 77.3 K, in order to apply these materials to electronic devices. It has been found that methods such as laser vapor deposition, reactive vapor deposition and the like are effective for forming high quality single-crystalline thin films with respect to such oxide superconducting materials. The aforementioned conventional methods of forming single-crystalline thin films utilizing epitaxy, i.e., such a phenomenon that another type of crystal is grown on a specific crystal plane in a constant orientational relation, are generally adapted to form thin films on surfaces of single-crystalline substrates. In each of such conventional methods, it is extremely important to employ a single-crystalline substrate having a crystal structure and a lattice constant which are similar and close to those of the thin film material, in order to form a high quality single-crystalline thin film. In such prior art, therefore, a single-crystalline thin film can be formed only on a substrate which is made of a specific material, while the size of the formable single-crystalline thin film depends on that of the employable substrate. Thus, it is impossible to freely form a single-crystalline thin film having desired size and length according to the prior art. In the field of a semiconductor thin film, on the other hand, there is graphoepitaxy of employing an amorphous substrate having periodic grooves formed on its surface and generating crystal nuclei on edges of these grooves in a selective orientation, thereby single-crystallizing a film deposited on the substrate. According to this technique, it is possible to form a single-crystalline thin film having excellent crystallinity as to Si, for example, without employing a single-crystalline substrate. Also in such graphoepitaxy, however, the size of the substrate which can be provided with periodic grooves is restricted. Thus, it is difficult to freely form a single-crystalline thin film on a base material having desired size and length, similarly to the above. In recent years, there has been made an attempt of forming an oxide superconducting film on a flexible long tape base material for manufacturing a superconducting wire. The base material for the wire is generally prepared from a metal, which is a polycrystalline substance in general. When an oxide thin film is formed on such a base material by laser vapor deposition or reactive vapor deposition, generally formed is a polycrystalline or amorphous thin film having random orientation. Even if the thin film has natural orientations, crystals forming the thin film orient specific crystal axes in a direction perpendicular to the surface of the base material, while hardly orienting axes in a direction parallel to the base material surface. Also when an oxide superconductor film is formed on a polycrystalline substrate of MgO, SrTiO 3 or ZrO 2 , the as-formed film has irregularly oriented crystal planes. Since a superconducting current is inhibited by grain boundaries, it is impossible to attain sufficient superconductivity in a thin film which is formed on a polycrystalline substrate by the prior art. From Patent Abstracts of Japan, Vol. 15, No. 96, (C-812) 7 March 1991 & JP-A-2 307 808 (Sumitomo Electric Ind. Ltd.) 21 December 1990 a method for producing high quality oxide superconducting wire is known. To obtain the above wire having high quality a tape-shaped substrate made from a zirconia ceramic or an Ni-alloy smoved in the longitudinal direction and a film of an oxide superconducting material is formed thereon by vapor deposition with a laser. The laser light irradiates a target made of an superconducting material and atoms and/or molecules scattered from this target are deposited on the substrate through a mask. This mask limits the film forming region. EP-A-0 499 982 constitutes prior art pursuant to Art. 54(3) EPC. It discloses a method for forming device quality, epitaxial-like, high T c single-crystal superconducting films on inexpensive substrates by vapor phase deposition such as laser ablation. The deposition is controlled through the use of a mask to initially expose only a preselected nucleation site. During the operation of the deposition apparatus, either the mask is moved or the relationship between the mask, the substrate and deposition apparatus is otherwise manipulated so as to vary the area of the substrate exposed to the deposition apparatus. The use of the mask inhibits polycrystalline growth of superconducting material. EP-A-0 398 374 discloses the deposition of YBa 2 Cu 3 Ox or Bi-Sr-Ca-Cu-O or Tl-Ba-Ca-cu-O-type oxide superconductors by laser ablation using a mask at a distance of 1 mm from the moving tape-type base material made of zirconia or MgO. An object of the present invention is to provide a method which can form a single-crystalline thin film having excellent crystallinity on a base material without depending on a material for an crystallinity of the base material. Another object of the present invention is to provide a method which can arbitrarily form a single-crystalline thin film having excellent crystallinity on a base material of a desired size. Still another object of the present invention is to form an oxide superconducting thin film having excellent crystallinity and superconductivity on a polycrystalline base material. A further object of the present invention is to form an oxide superconducting thin film having excellent crystallinity and superconductivity on a long base material, thereby fabricating a wire which exhibits a high critical current density. This object is solved by a method in accordance with claim 1. The present invention is adapted to form a single-crystalline thin film consisting essentially of an oxide superconductor, more preferably a thin film of a single crystal, on a base material, in particular. The oxide superconductor includes a Y-based superconductor such as a Y-Ba-Cu-O superconductor, a Bi-based superconductor such as a Bi-Sr-Ca-Cu-O superconductor, or a Tl-based superconductor such as a Tl-Bi-Sr-Ca-Cu-O superconductor. The vapor phase for depositing the oxide superconductor can be prepared in accordance with vapor deposition such as reactive vapor deposition, laser ablation, molecular beam epitaxy (MBE), CVD, ion plating, spray pyrolysis, flash plasma or the like. When laser ablation is employed, it is possible to form a single-crystalline thin film of a superconductor by irradiating a target of a Y, Bi or Tl have sintered body with a laser beam for generating plasma and exposing a base material delivered from the mask to this plasma. A substrate for forming a thin film of an oxide superconducting material has been generally prepared from a single crystal of MgO, SrTiO 3 or ZrO 2 . According to the present invention, however, a base material can be prepared from a polycrystalline material of MgO, SrTiO 3 or ZrO 2 , a sheet of yttria stabilized zirconia, or a metal base material such as a metal tape, in addition to the said material. The present invention is applied to formation of a single-crystalline thin film on a polycrystalline substrate, in particular. The foregoing and other objects, features, aspects and advantages of the present invention will become more apparent from the following detailed description of the present invention when taken in conjunction with the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a perspective view for illustrating a process of forming a single-crystalline thin film with irradiation of a laser beam or an ion beam; Fig. 2 is a sectional view for typically showing a process of forming a single-crystalline thin film in Example 20 according to the present invention, and Fig. 3 is a sectional view showing a process of forming a single-crystalline thin film in Example 3 according to the present invention. DESCRIPTION OF THE PREFERRED EMBODIMENTS Referring to Fig. 1, a boundary region 35c between a portion 35a of a base material which is covered with a mask 36 and another portion 35b which is exposed to a vapor phase 37 is irradiated with a linearly focused beam 38. This beam 38 is prepared from a linearly focused laser beam or an ion beam having a linear section. Due to irradiation with such a beam, it is possible to relatively easily implement an extremely higher energy state in a boundary region as compared with a peripheral portion. Even if molecules or atoms entering a small clearance between a mask and a base material come into contact with a portion of the base material, being covered with the mask, which is close to a boundary region to form a polycrystalline initial thin film, therefore, such an initial thin film is completely evaporated from the base material or sputtered (worn) at the boundary region when the base material is continuously delivered from the mask. Thus, the surface of the base material is maintained in high purity. Film formation on the base material is first started immediately after the base material is released from irradiation with the laser beam or the ion beam. Consequently, shape steps having excellent reproducibility and a regular crystal orientation are formed on the base material so that an initial growth film is formed along edges of such steps. Since an initial growth film having a specific crystal orientation is reliably formed in the aforementioned manner, it is possible to thereafter grow a film with a dominative crystal orientation also at a position separated from the boundary region. According to this technique, therefore, it is possible to form a thin film having a regular crystal plane orientation on a base material without forming a solid-liquid interface in a boundary region between a mask and a base material and without supplying a gas flow in a direction of relative movement of the base material. The laser beam is preferably prepared from a coherent pulsed laser beam such as an excimer laser beam. The beam source can be selected from ArF, KrF, XeCl and N 2 excimer lasers, and a YAG laser. The excimer lasers have specific oscillation wavelengths of 193 nm, 248 nm, 308 nm and 337 nm respectively. As to the YAG laser, it is possible to preferably use second, third and fourth harmonics. When an oxide superconducting film is formed, an excellent result can be obtained by setting an energy density of the pulsed laser beam in a range of at least 0.5 J/cm 2 and not more than 5.0 J/cm 2 per pulse. The pulsed laser beam can be linearly converged through a cylindrical lens or a cylindrical mirror. On the other hand, an ion beam can be obtained by accelerating and converging ions generated from an ion source with an electrostatic lens system, as is well known in the art. The boundary region of the base material is irradiated with the ion beam having a linear section under conditions required for implementing a high energy state by acceleration of ions and an effect of charges. Dispersion of energy distribution is preferably not more than 5 % on a section of the ion beam. An ion source may be prepared from argon, oxygen or a mixture thereof, for example. The energy of the ion beam can be set in a range of 50 to 500 eV, for example. Such irradiation with the beam can be combined with the aforementioned technique of employing a metal thin film or a gas flow. As described in the following Examples, the present invention is preferably employed for forming a thin film which consists essentially of an oxide superconductor on a flexible long base material. An oxide superconductor film having excellent crystallinity provides a wire having excellent superconductivity. The present invention is also applicable to fabrication of a superconducting element. As to the aforementioned technique employing a beam, expected is application to fabrication of a long wire such as a wire of at least 100 m, for example. Example 1 A base material 91 was prepared from a tape of an Ni-group alloy, called hastelloy, of 0.1 mm in thickness, 5 mm in width and 1.5 m in length, and first provided thereon with a thin film of yttria stabilized zirconia through no mask. The as-formed thin film, in which [100] and [111] axes were uprighted on the base material surface in a mixed state, exhibited random axial orientation in relation to directions in the base material surface. Then, a boundary region of the tape-type base material 91 between a mask 92 and film forming environment was irradiated with a laser beam 96 which was converged to a beam width of 0.1 mm as shown in Fig. 2, to form a Y 1 Ba 2 Cu 3 O x thin film on the yttria stabilized zirconia thin film by laser ablation at a film forming rate of 0.45 µm. The laser ablation was carried out as shown in Fig. 2. A Y crystalline target 93 was irradiated with a laser beam 94 to generate a plume 95 perpendicularly to the target surface, so that chemical species contained in this plume 95 adhered onto the tape-type base material 91 which was continuously delivered from above the mask 92. In this laser ablation, the base material 91 was set at a temperature of 650 to 750°C, and gaseous oxygen was set at a pressure of 4 to 67 Pa (30 to 500 mTorr). The laser beam 94 was emitted from a KrF excimer laser (wavelength: 248 nm), with a laser energy density of 1.5 to 3.3 J/cm 2 and a laser repetition rate of 1 to 100 Hz. A clearance d between the tape-type base material 91 and the mask 92, which was provided in parallel with the base material surface, was set at 1 cm. On the other hand, the laser beam 96 was emitted from a KrF excimer laser (wavelength: 248 nm), with a laser energy density of 1.2 J/cm 2 and a laser repetition rate of 10 Hz. The tape-type base material 91 was moved with respect to the mask 92 along arrow A at a speed of 1.2 cm/min., to form the thin film. The as-formed thin film exhibited orientation of a c-axis perpendicularly directed to the base material surface along the overall base material 91. A plane which was parallel to the base material 91 exhibited such a tendency that a and b axes were oriented along the boundary region. Axis orientation of this film was examined in a direction which was parallel to a substrate surface by an X-ray pole figure method, to confirm that crystal grains having axis orientation within ±10° occupied 97 % and those having axis orientation within ±5° occupied 91 %. Example 2 A Y 1 Ba 2 Cu 3 O x thin film was formed on a base material by laser ablation, similarly to Example 1. According to this Example, a boundary region of the base material between a mask and film forming environment was irradiated with a laser beam emitted from an ArF excimer laser (wavelength: 193 nm), with a laser energy density of 2 J/cm 2 and a laser repetition rate of 100 Hz, which was identical to the frequency of the laser employed in the ablation. Also when such an ArF excimer laser was employed, a and b axes were strongly oriented in a specific direction along the boundary region which was irradiated with the laser beam in a plane parallel to the base material. Orientation of this film in a base material plane direction was examined by an X-ray pole figure method, to confirm that crystal grains having axial orientation within ±10° occupied 95 % and those having axial orientation within ±5° occupied 86 %. Example 3 Y 1 Ba 2 Cu 3 O x thin films were formed on base materials by laser ablation. An Ni-Cr alloy tape of 0.1 mm in thickness and 5 mm in width was employed as a base material 41, and a mask 42 of stainless steel was fixed on this base material 41 with a clearance d of 0.1 mm as shown in Fig. 3. Reactive vacuum deposition was employed for forming a thin film of yttria stabilized zirconia on the Ni alloy tape. A reaction gas was prepared from oxygen, and its pressure was set at 0.4 Pa (3 mTorr). The temperature of the base material 41 was set at 750°C. As hereinabove described, the base material 41 was continuously moved along arrow E in Fig. 3 at a speed of 2 mm/min., to form a thin film of yttria stabilized zirconia by vacuum deposition. According to this Example, boundary regions were irradiated with ion beams, in place of laser beams. Ion beam sources were prepared from argon gas, gaseous oxygen and a mixed gas containing 50 % of argon and 50 % of oxygen, with ion beam energy of 350 eV, ion currents of 40 mA, and ion beam irradiation widths of 0.3 mm. All of the as-formed thin films were c-axis oriented along the overall base materials, with such tendencies that a and b axes were strongly oriented in specific directions in directions parallel to the base material surfaces. Axial orientation states in planes which were parallel to the base materials were examined by an X-ray pole figure method, to obtain results shown in Table 5. Ionic Species Crystal Grains Within Inclination of ±10% Crystal Grains Within Inclination of ±5% Argon (Ar + ) 88% 78% Oxygen (O + ) 93% 88% Mixed Gas of Argon & Oxygen (Ar + O + ) 90% 82% It was clarified that a and b axes were oriented at inclinations of substantially within 5° in the as-formed thin films whatever ionic species were employed. It was further confirmed that a thin film having strong single-crystallinity can be obtained also by irradiation with an ion beam having a linear beam section. In each of the aforementioned Examples, the base material provided with a superconducting thin film having strong single-crystallinity can be directly applied to a superconducting wire. Such a superconducting thin film having strong single-crystallinity can be provided with higher current capacity, due to a smaller amount of grain boundaries. In Examples 1 and 2, for example, wires obtained by forming thin films of superconductors on base materials exhibited critical current densities of 1.2 x 10 6 A/cm 2 and 8.5 x 10 5 A/cm 2 at 77.3 K respectively. In Example 22, further, wires obtained by forming thin films of superconductors on base materials through irradiation with beams of three types of ionic species exhibited critical current densities of 5.3 x 10 5 A/cm 2 , 7.6 x 10 5 A/cm 2 and 6.8 x 10 5 A/cm 2 at 77.3 K respectively. These values are greater by 1 to 2 digits than that of a wire provided with a polycrystalline superconducting thin film. According to the present invention, as hereinabove described, it is possible to form a thin film having strong single-crystallinity on a region of a base material without depending on a material for and crystallinity a base material. According to the present invention, it is possible to form such a single-crystalline thin film on a base material having a desired shape at a low cost, in place of a conventional single-crystalline substrate. Due to the aforementioned properties, the present invention is extremely useful as a method of forming a thin film as to a Y, Bi or Tl oxide high temperature superconductor. When a superconductor thin film having strong single-crystallinity is formed on a tape-type metal base material according to the present invention, for example, it is possible to obtain a superconducting wire which exhibits a high critical current density, as hereinabove described. According to the present invention, further, a single-crystalline thin film can be easily formed on an arbitrary region of a base material, particularly that having a large area, whereby it is possible to easily obtain a thin film which is effectively applied to a magnetic shield or a high-frequency component. In addition, the present invention is effective for formation of a thin film of a superconducting device using Josephson coupling, for example. According to the present invention, it is possible to form a single-crystalline thin film on a tape-type base material or a wafer having a large area, for example. As hereinabove described, it is possible to form a single-crystalline thin film of a superconductor on an arbitrary region of a base material or a region of the base material having a larger area according to the present invention, whereby superconducting devices can be efficiently mass-produced when a base material provided with a superconductor thin film according to the present invention is cut to obtain chips. Although the present invention has been described and illustrated in detail, it is clearly understood that the same is by way of illustration and example only and is not to be taken by way of limitation, the scope of the present invention being limited only by the terms of the appended claims.

Claims: A method for forming a single crystalline thin film having a specific orientation on a continuous region of a base material (31) from a vapor phase (37), said method comprising: a step of preparing said base material (31) to be provided thereon with said thin film; a step of preparing said vapor phase (37) for depositing said single crystalline thin film on said base material (31); a step of covering a portion (35a) of said base material with a mask (26) being capable of preventing chemical species contained in said vapor phase (37) from adhering to said base material (31); and a step of relatively moving said base material (31) with respect to said mask (26) thereby continuously delivering said portion (35a) of said base material (31) having been covered with said mask (26) into said vapor phase (37); characterized by further comprising a step of irradiating a boundary region (35c) between said portion (35a) of said base material (31) being covered with said mask (26) and that portion (35b) being exposed to said vapor phase (37) with a linearly focused laser beam (38) or an ion beam (38) having a linear beam cross section. A method in accordance with claim 1, wherein in a region of said base material (1) said thin film deposited theron is at least a polycrystalline substance. A method in accordance with claim 1 or 2, wherein said vapor phase is prepared by laser ablation. A method in accordance with one of the preceeding claims, wherein said base material (11) is exposed to said vapor phase through a window (12a) being provided in said mask (12). A method in accordance with one of the preceeding claims, wherein said single crystalline thin film having a specific orientation essentially consists of an oxide superconductor. A method in accordance with claim 5, wherein said portion of said base material is delivered into said vapor phase at a speed of at least about 1 cm/min. A method in accordance with claim 5, wherein said base material is a long tape, for forming a superconducting wire. A method in accordance with claim 5, wherein said oxide superconductor is formed of one or more superconductors selected from a group of yttrium, bismuth and thallium oxide high temperature superconductors. A method in accordance with claim 5, wherein said oxide superconductor film is formed on a film being formed on said base material and consisting essentially of yttria stabilized zirconia or magnesium oxide.

Inventors: FUJINO KOUSOU, HARA TSUKUSHI, ISHII HIDEO, OKUDA SHIGERU, TAKANO SATOSHI, YOSHIDA NORIYUKI, FUJINO, KOUSOU, HARA, TSUKUSHI, ISHII, HIDEO, OKUDA, SHIGERU, TAKANO, SATOSHI, YOSHIDA, NORIYUKI, Fujino, Kousou, c/o Osaka Works of Sumitomo, HARA, TSUKUSHI, C/O THE TOKYO ELECTRIC, Ishii, Hideo, c/o The Tokyo Electric, OKUDA, SHIGERU, C/O OSAKA WORKS OF SUMITOMO, TAKANO, SATOSHI, C/O OSAKA WORKS OF SUMITOMO, YOSHIDA, NORIYUKI, C/O OSAKA WORKS OF SUMITOMO
Applicants: SUMITOMO ELECTRIC INDUSTRIES, TOKYO ELECTRIC POWER CO, SUMITOMO ELECTRIC INDUSTRIES, LIMITED, THE TOKYO ELECTRIC POWER CO., INC.
Application year: 1993
Main classification: C30B23
IPC codes: C30B25, H01L39, C30B23