Method and apparatus for normalizing a laser beam to a reflective surface

Abstract: The disclosure relates to an etch monitor system, the angle of incidence to normal between a laser beam (13) and a reflective surface (18), such as a silicon wafer, is adjusted by a rotatable mirror (20) having a pinhole (22) formed therethrough, the rotatable mirror being moveably mounted to be positioned in a first location within a light path and a second location out of said light path. When the rotatable mirror is located in the light path, the pinhole allows a beam of the laser beam to pass from a laser source to the reflective surface. If the beam is normal to the reflective surface, the beam is directed back toward the laser source through the pinhole. If the beam is not normal to the reflective surface, the beam is reflected by the rotatable mirror to a target (26), allowing observation of a lit spot of the target to enable normalization by making appropriate adjustments.

Description: The present invention relates to equipment used in the fabrication of semiconductor devices. More particularly, the present invention relates to a method and apparatus for normalizing a light beam to a wafer surface in semiconductor fabrication equipment. The process of etching a pattern in a semiconductor wafer becomes increasingly critical as device geometries shrink. Control over the rate and depth of etch is absolutely essential to the fabrication of modern integrated circuits. Techniques used to control etching rely on detection of the process end point, i.e. the point at which the etch cycle is to be concluded, taking into account depth of etch, time necessary to effect etchant flow rate reduction and chamber purge cycles, among other criteria. An end point detection system, etch rate monitor, or etch-to-depth controller of the type currently in use is shown in Fig. 1. Such system involves a coherent, collimated light source, such as a laser beam source 12, which is typically a Helium-Neon (HeNe) laser, a Helium-Cadmium (HeCd) laser, or other such light source. The laser beam is projected through an optical train 30, including a beam expander (as with a HeNe laser), to a wafer surface 18. The beam is on the order of 6mm wide such that a large portion of the die is covered. Depending upon the geometry of the semiconductor dies, the width of the beam may be reduced or increased. Since portions of the surface of a silicon wafer are highly reflective, the zero-order reflections are reflected back toward the source, if the beam is at normal incidence. As the depth of the various patterns etched into the wafer surface increases, portions of the laser beam are scattered, creating a diffraction or interference pattern in the reflected laser beam which is separately detected by a collecting and detector apparatus 11 and computer processed to indicate rate and depth of etch, and from which signals may be derived to control the end point of the etch process. It is essential that a coherent, collimated light source be normal to (i.e. at 90° to) the wafer surface in a diffraction laser etch rate monitor of the type described above, especially when devices are to be fabricated using submicron geometries. It is known in the art to perform such normalization by manually entering a slip of paper into the fringes of the illumination laser beam to determine if the zero order reflected beam coincides with the illumination beam. The angle of incidence is then corrected to normal by repositioning the laser source's angular relationship to the wafer. Another known technique for effecting laser beam normalization is to position a beam splitter in the laser illumination beam path and arrange a target at one illumination path of the beam splitter, such that coincidence of the source and zero-order return beams may be observed on the target. Adjustments to correct for an angle of incidence that is normal may then be made as outlined above. Such techniques as are known for achieving a normal angle of incidence between a laser beam and a reflective wafer surface pose particular problems. Using a piece of paper exposes a technician performing the adjustment to a dangerous laser beam and may result in serious injury to the technician's eyes. Since the paper is hand held, the adjustment is at best very crude and inadequate for submicron device structures. More importantly, operating technicians are not generally familiar with the construction of the etch rate monitor, nor do they understand the phenomena involved, although they can be readily instructed in performing simple calibration steps. Using a beam splitter and target produces more accurate results than the typical adjustment procedures using a strip of paper, but attenuates the power of the laser beam. Thus, more powerful and expensive laser sources must be designed into the etch monitor equipment. The higher power levels increase the potential for injury to a technician and may also damage delicate semiconductor device structures. Also, beam splitters alter beam polarization properties and cause unwanted beam distortion. The present invention provides an apparatus and method, as defined in claims 1 and 14, for achieving a normal angle of incidence between a laser beam and a reflective surface, such as a silicon wafer. When applied to a diffraction laser etch rate monitor and etch-to-depth controlling systems, the invention introduces a mirror, provided with a pinhole, into an illumination laser beam path to perform laser beam to wafer surface normalization. In an exemplary embodiment of the invention, the mirror is moved into the laser path. The mirror backside obstructs the illumination beam, except for that portion of the beam which passes through the pinhole. If the light path is perfectly normal to the wafer surface, substantially most of the light which passes through the pinhole from the laser illumination beam is reflected back from the wafer surface and through the pinhole. If the light path is not perfectly normal to the wafer surface, the beam is reflected from the wafer surface to the mirror and from the mirror surface onto a target where it may be safely observed for purposes of achieving a normal angle of incidence. Alignment is performed as necessary and the mirror is then moved out of the illumination path. In this way, technician exposure to the laser beam is reduced, precision adjustment of the beam/wafer angle of incidence is enabled, and laser beam power attenuation is eliminated. The following is a description of some specific embodiments of the invention reference being made to the accompanying drawings, in which: Fig. 1 is a partial cross sectional side view of an illustrative embodiment of the present invention; Fig. 2 is a detailed cross sectional side view of an illustrative embodiment of the present invention; Fig. 3a is a first schematic representation of a light path according to an illustrative embodiment of the present invention; Fig. 3b is a second schematic representation of a light path according to an illustrative embodiment of the present invention; and Fig. 4 is a top view of a target alignment pattern according to an illustrative embodiment of the present invention. The present invention is best understood by referring to the Drawings in connection with review of this Disclosure. A method and apparatus for achieving a normal angle of incidence between a laser beam and a reflective surface is disclosed. The present invention is intended for use on a reaction chamber with an etch rate monitor system of the type described above, where precise control of the rate and depth of wafer etch is a necessary step in the fabrication of semiconductor devices. Fig. 1 shows an optical collecting and detector apparatus 11 that detects an interference or scattering pattern of a laser beam 13 as the beam is diffracted by the surface 18 of a semiconductor wafer during the wafer etching process. The laser beam produced by a laser source 12 is isolated and focused by optical train 30, which may include collimating and/or expanding optics. Beam 13 is reflected from a first steering mirror 14 via a second steering mirror 36 to a third steering mirror 16 and through a reaction chamber lid window 17 to the wafer surface. The particular optical arrangement shown in Fig. 1 is provided for purposes of example. Other optical paths may be provided as desired without departing from the scope of the present invention. For example, reaction chamber lid window 17 may be tilted such that reflections from the window are eliminated and thus do not produce ghost images on a target during operation of the present invention (as more fully described below). Optical train 30 may also contain optical isolation elements. Such elements are necessary to insure that the portion of the beam which is reflected from the wafer surface back toward the light source does not actually reach the light source. Otherwise, the light source could be damaged. The present invention, shown in Fig. 1 as apparatus 10/control rod 19, allows accurate adjustment of the angle of incidence between the laser beam and the wafer surface. In a preferred embodiment of the present invention, such adjustments are made to the position of a turntable 28 relative to the plane of wafer surface 18 such that laser beam 13 is normal to the wafer surface. Turntable 28 mounts both optical collecting and detector apparatus 11 and laser source 12/optical train 30. Adjustment of the plane of turntable 28 relative to that of the wafer surface is accomplished by interaction of adjustment/leveling devices 32a/32b. Such devices are of a type that gradually tilt the turntable along the axis of a threaded post and thus provide fine adjustment of the turntable about one or more axes from a turntable registration point. Thus, the entire plane of the turntable may be precisely adjusted relative to the wafer surface. The detection optics are designed with sufficient depth of focus such that movement inherent in adjusting the turntable to achieve a normal angle of incidence between the laser beam and the wafer surface does not affect the focus of the optical collecting and detector apparatus 11. In the present invention, the adjusting devices are preferably of a type that are releasably lockable. Various other adjusting/leveling devices are known in the art and the invention may also be used with any of such leveling devices. Fig. 2 is a detailed cross sectional side view of a preferred embodiment of the present invention. A laser beam which propagates along path 13 is reflected from the surface of a first steering mirror 14 to that of a second steering mirror 36, then to third steering mirror 16, and then downwardly, ideally at a 90° angle, to a wafer surface (not shown). To help effect adjustment of such angle, the present invention includes a rotatable mirror 20(20a) moveable by the operation of a control rod 19 between a first position in which the rotatable mirror is interposed within laser beam path 13 for purposes of achieving a normal angle of incidence between the laser beam and the wafer surface, and a second position outside of the laser beam path, allowing normal, unobstructed operation of the optical collecting and detector apparatus 11. An adjustable stop (not shown) may be included such that rotatable mirror travel is limited when the rotatable mirror is brought into the path of the laser beam for normalization. Adjustment of such stop is part of a factory alignment of the entire optical path of the etch detector apparatus. Such factory alignment would also include alignment of the reflective steering mirrors and laser source to assure accurate beam propagation along the beam path. Mirror 20 is shown in its first position (normalizing) as designated by numeral 20 and in its second position (normal etch rate monitor operation) as designated by numeral 20a. In the preferred embodiment of the present invention, rotatable mirror 20 is movable between these two positions by operation of control rod 19 which includes a pivot 25 (25a), a coupling, such as extension spring 29, a link 29a, and a second pivot 27 connected to a lever 38 which is clamped to the mirror/pivot 24. Control rod 19 moves axially within a guide or bushing 37 which assures smooth and deliberate movement of the rotatable mirror. An opposite edge of the mirror/pivot 24 provides an axis about which the rotatable mirror may be rotated between said first position to adjust for a normal angle of incidence and said second position, after such adjustment is completed. A bias, such as spring 23, is included to maintain the rotatable mirror in said second position, out of the laser beam path. Thus, in operation a technician must maintain an upward tension on control rod 19 during adjustment of the angle of incidence for normal. Releasing control rod 19 returns rotatable mirror 20 to its second position. This feature assures that rotatable mirror 20 is not inadvertently left in the laser beam path after such adjustment is completed. Mirror 20 is maintained within laser beam path 13 by the application of tension by a technician to control rod 19 as shown by the arrow in the Fig. Operation of the present invention is best understood with reference to Figs. 3a and 3b. In Fig. 3a, laser source 12 produces a beam 13 that is reflected from the surface of steering mirror 14 through a pinhole 22 formed in rotatable mirror 20. The pinhole serves two functions: targeting a return path of the beam as explained in more detail below, and narrowing a wide beam on the order of 6mm (0.24") to a width of about 1.3mm (0.05"). The foregoing beam widths are typical for a HeNe laser light source. Other beams widths could be provided as appropriate for the light source used. The pinhole is machined such that the inner surface of the pinhole is coaxial with both the source and return light paths and with the path of reflection to the target. In the preferred embodiment of the invention this is accomplished by boring the pinhole along both axes when the pinhole is formed. In other embodiments of the invention, the pinhole size may be adjusted to regulate the amount of reflected laser light impinging on the target. Such adjustment allows varying amounts of light to be targeted. Thus, with a less powerful laser, or in a brightly lit environment, a greater amount of light is permitted into the light path to illuminate the target. Conversely, where less light energy is desired, the width of the beam may be narrowed as appropriate. The pinhole size may be derived by means of an adjustable diaphragm. In yet other embodiments of the invention, multiple pinholes may be provided, including near the perimeter of the collimated beam to check for divergence, i.e. the amount of non-collimation. Introduction of the pinhole into the light path is significant because the initial width of the beam is such that targeting a reflection of the beam from a wafer surface in an-out-of normal system produces a large area of illumination on the target. Subtle adjustments necessary to effect normalization of the beam to the wafer would not be readily detected by a technician when a large portion of the target area is illuminated. Additionally, a technician would be observing fringing effects that might distort the actual angular relationship of the beam to the wafer surface. Narrowing the beam eliminates these effects. Finally, the technician is exposed to a greater amount of dangerous laser light if the beam is used at its full width. The introduction of the pinhole into the light path narrows the beam and therefore targets a small area of illumination. Subtle changes in the angular relationship of the beam to the wafer produce a more significant movement of the illuminated area relative to the target when such area is smaller. An adjustment of the relationship of the beam to the wafer is thus more readily detected by a technician, thereby facilitating adjustment of the angle of incidence for normal. Reduction in the width of the beam also reduces technician exposure to the full force of the light source. In this way the normalization operation is more precise and less dangerous. Pinhole 22 allows a beam 13a to pass along the path shown to steering mirror 16. The beam is reflected from the surface of steering mirror 16 to wafer surface 18. If the wafer surface is normal to beam 13a, the beam is reflected back to steering mirror 16 through pinhole 22 onto steering mirror 14 and toward laser source 12. An out-of-normal wafer surface 18a is also shown in Fig. 3a. Beam 13a is reflected from steering mirror 16 to wafer surface 18a. Because beam 13a is not normal to wafer surface 18a, a return beam 15a is reflected from the surface of steering mirror 16 to the surface of rotatable mirror 20, but not through pinhole 22. Beam 15a is reflected from the surface of rotatable mirror 20 (which may be coated so as to be reflective only in the return path of the beam) to a target 26 where it may be observed by a technician. Target 26 is a composite of frosted/diffused and filter material in the preferred embodiment of the invention such that beam 15a illuminates the target without permitting injurious ultraviolet or infrared laser energy to be transmitted therethrough and thus injure a technician who may be observing the target. In other embodiments of the invention, the target may be an electronic detector or other detecting or indicating device. Appropriate adjustment of turntable 28 is made while observing target 26. When the angle of incidence is normal between the laser beam and the wafer surface, the return beam follows path 13a through pinhole 22 toward laser source 12 and there is no longer a bright lit spot on target 26, but only a small corona effect. Fig. 3b shows normal operation of an etch rate detection system that includes the present invention. In this mode of operation, rotatable mirror 20 is rotated about edge/pivot point 24 out of laser beam path 13. The rotatable mirror is held in this position by a bias supplied by a spring 23 or other such biasing device. In the preferred embodiment of the invention, target 26 is provided with an alignment pattern to aid in adjusting the angle of incidence to normal. Fig. 4 shows a target having a pattern 33 that includes a center point 35 at which a small corona indication is present when a normal angle of incidence is achieved. This corona is caused by diffraction of laser light at the physical annulus of the pinhole and divergence of the beam which occurs as the beam is propagated from the pinhole to the wafer and back to the pinhole. An out-of-normal etch rate monitor would produce a lit spot, such as spot 34 on target 26. Setting the angle of incidence for normal involves adjusting the relationship between the laser source and the wafer surface as described above, until the lit spot is moved to target pattern center 35, at which point substantially all return path laser energy is directed through pinhole 22 and no such energy is reflected to target 26 other than that which produces the corona effect discussed above. In a preferred embodiment of the invention, this adjustment is carried on about two adjustable axes, with a pivot point fixed along a third axis provided as a stable reference point to provide a three-point lay up. Thus, the plane of turntable 28 is fine adjusted or tiltable orthogonally in two dimensions about, and normal to, a turntable registration point. The target pattern is arranged such that operation of adjustment/leveling devices 32a/32b to adjust the position of turntable 28 produces a corresponding movement of the lit spot on the target. In the preferred embodiment of the invention, adjustment/leveling devices 32a/32b are machined such that one turn of an adjustment knob associated therewith corresponds to a specific movement of the lit spot on the target pattern along X-Y axes, i.e. the distance of one concentric ring of the target pattern to the next concentric ring is equal to one turn of the adjustment knobs, either singly, or in a combined compound movement of both adjustable knobs amounting to one turn. Thus, operation of adjustment/leveling devices 32a/32b produces a predictable vector movement of the lit spot. In this way, a technician may readily adjust the angle of incidence of the laser beam to normal. The turntable is rotatable in the preferred embodiment of the invention and includes a brake mechanism (not shown) for holding the turntable against rotation. In case the wafer is held or clamped to a domed pedestal after initial normalization and the turntable has been rotated for centering the laser beam onto a specific die, the normalization procedure may be carried out again depending upon the extent of the wafer curvature and the amount of rotation. If desired, such normalization and locating of a die by rotation of the turntable may be automated. Applying the present invention to the alignment of an etch rate monitor allows extremely accurate, quick adjustment of the angle of incidence to normal between the laser beam and a wafer surface. Typically, such alignment is performed with a blank silicon wafer. Thereafter, a production type wafer having known orientation may be provided as an alignment wafer, such that the etch rate detection apparatus can also be aligned. The present system avoids the attenuation of laser beam strength inherent in prior art beam splitter systems and is completely safe to operate. It has been found that the present invention is useful in precision alignment of etch rate detection and monitoring systems such that structures with submicron widths may be fabricated having capacitor trenches with depths of eight microns or more. While the invention has been particularly shown and described with reference to an illustrative embodiment, detailing the best mode presently known for practicing the invention, it should be understood by those skilled in the art that various other modifications and changes may be made to the present invention described above without departure from the scope thereof, as defined in the appended claims.

Claims: An apparatus for normalizing a collimated light path to a reflective surface (18), comprising: a mirror (20), including a pinhole (22) formed therethrough, the mirror (20) being movable to a first position within a light path between a light source (12) and said surface (18), such that light from said light source (12) passes through said pinhole (22) to said surface (18) where it is reflected back along the same path to said mirror (20) and through said pinhole (22) toward said source (12) when said source light path is normal to said surface (18), and being movable to a second position out of said light path; and a target (26) for receiving light reflected by said mirror (20) which is directed to said mirror (20) from said surface (18) along a path that diverges from the path of light from the light source (12) when said source light path is not normal to said surface (18). The apparatus of Claim 1, wherein said light source (12) comprises a laser. The apparatus of Claim 1, wherein said apparatus is suitable for processing the surface (18) of a semiconductor wafer. The apparatus of Claim 1, further comprising an alignment mechanism (32a, 32b) for adjusting the position of said light source (12) to said reflective surface to effect normalization therebetween. The apparatus of Claim 1, wherein said alignment mechanism further comprises a turntable (28) for mounting said light source (12), said apparatus further comprising a process chamber including a window (17) for admitting light from said light source into said process chamber. The apparatus of Claim 5, wherein said window (17) is tiltably adjustable to eliminate ghost images from reflection to said target (26). The apparatus of Claim 5, wherein said turntable (28) is automatically adjustable for rotation for location of a specific feature of said reflective surface (18). The apparatus of Claim 1, wherein said mirror (20) is mounted on a edge thereof and is pivotable about an axis along said edge between said first position and said second position; and further comprising a control rod (19) for effecting movement of said mirror (20) between said first position and said second position. The apparatus of Claim 8, further comprising a bias (23) for maintaining said mirror (20) in said second position, out of said light path, wherein said control rod (19) is operated to move said mirror (20) into said first position, within said light path. The apparatus of Claim 1, wherein said target (26) further comprises a pattern (33) for indicating light source/reflective surface normalization. The apparatus of Claim 1, wherein said mirror (20) further comprises a plurality of pinholes formed therethrough. The apparatus of Claim 1, wherein said target (26) further comprises a photodetector. An etch rate monitoring/etch-to-depth controlling system, comprising an apparatus according to claim 1 for normalizing a collimated light path to a semiconductor wafer surface (18). A method for normalizing a collimated light path to a reflective surface (18), comprising the steps of: positioning a mirror (20) having a pinhole (22) formed therethrough within said light path between a light source (12) and said reflective surface (18) such that light from said source (12) passes through said pinhole (22) to said surface (18) and is reflected from said surface (18) along the same path to said mirror (20) and through said pinhole (22) and toward said source (12) if said source light path is normal to said surface (18); determining if light reflected from said surface (18) is reflected from said mirror (20) onto a target (26), indicating said source light path is not normal to said reflective surface (18); adjusting the relationship between said light source (12) and said reflective surface (18), if necessary, to achieve light path/reflective surface normalization;and positioning said mirror (20) out of said light path. The method of Claim 14, further comprising the step of rotating said mirror (20) with a control rod (19) about a mirror edge axis alternately between a first position within said light path, wherein light path/reflective surface normalization is performed, and a second position out of said light path. The method of Claim 14, further comprising the step of biasing said mirror (20) in said second position out of said light path and operating said control rod (19) to move said mirror into said first position, within said light path. The method of Claim 14, further comprising the step of providing a pattern (33) on said target (26) indicating laser source/reflective surface normalization.

Inventors: EBBING PETER, EBBING, PETER
Applicants: APPLIED MATERIALS INC, APPLIED MATERIALS, INC.
Application year: 1993
Main classification: B23K26
IPC codes: G01B11, H01L21, B23K26