Three-terminal switched mode power supply integrated circuit

Abstract: An embodiment of the present invention is a three-terminal switched mode power supply chip with a signal terminal for accepting a combination of a feedback control signal and bias supply voltage to operate the chip. A feedback extraction circuit separates the feedback signal from the power supply voltage within the chip by sensing the excess current flowing through a shunt regulator.

Description: Semiconductor Chip for Switched Mode Power Supply 1. Field of the Invention The present invention relates to a semiconductor chip according to the preamble of claim 1, and to a power supply in which said chip is used. 2. Description of the Prior Art A power supply and a chip according to the preamble of claim 1 is known from "Electronique", no. 19, 1992, p. 86. The integrated circuit chip comprises sixteen pins, not all being used. Principially, only four pins of the chip are absoslutely necessary for the power supply circuit. This has been shown in Fig. 1 of the present application labeled "Prior Art". The power supply 10 includes a full-wave bridge rectifier 12, a filter capacitor 14, a transformer 16 with a primary winding 18 and a pair of seondary windings 20 and 22, a diode 24 and a capacitor 26 that provide DC output as well as a diode 28 and a capacitor 30 that provide a voltage Vbias. Whereas in "Electronique" the feedback voltage is provided by a voltage divider connected to the secondary winding which provides V bias , in Fig. 1 a compensated error amplifier 32 and an opto-isolator 34 are used for this purpose. The chip is shown as a four-pin switched mode power supply chip 36. A V bias smoothing capacitor 38 is located near chip 36. V bias provides power to operate the chip 36 during working of the power supply. However, at power start-up, chip 36 will be without power because primary winding 18 will be open and no voltage will be induced into secondary winding 22 because chip 36 is not switching. To initiate such switching, a high voltage is tapped from the junction of a high voltage MOSFET 40 and the end of primary winding 18. This tap can supply enough current to start chip 36. A voltage regulator internal to chip 36 includes a high voltage pre-regulator transistor 42, a pass transistor 44 and an undervoltage comparator 46. During initial power-up, when the voltage (Vs) across capacitor 38 is zero or near zero, a resistor 48 biases transistor 42 on and will pass current to charge up capacitor 38. When voltage Vs exceeds a predetermined threshold, comparator 46 will switch on transistor 44 and switch off transistor 42. Comparator 46 includes hysteresis, transistors 42 and 44 will not switch back unless the voltage Vs falls below a second threshold voltage that is lower than the first threshold voltage. With voltage Vs and transistor 44 on, power is supplied to a pulse width modulator (PWM) 50. This allows normal switching operation to begin and transistor 40 chops the current flowing through primary winding 18. Transformer 16 therefore begins operating, and a voltage (V bias ) develops from secondary winding 22, diode 28 and capacitor 30. With V bias being supplied across capacitor 38, comparator 46 operates to keep transistor 42 off and no further high voltage power is required. A feedback signal, proportional to the DC output, is returend by way of amplifier 32 and opto-isolator 34 to PWM 50. Chip 36 therefore requires a minimum of four pins, e.g., OUT, FB, VS and GND. The cost to manufacture a power supply is a principal concern in selecting between power supply types to be used in particular applications and the components selected to construct them. Switching power supplies have become cost competitive with much simpler linear power supplies because integrated circuit (IC) technology has advanced such that a majority of the complex switch mode circuits can be integrated on a single chip. As a rule of thumb, the fewer necessary pins on an IC package, the lower will be the cost. In the prior art, the need for a minimum of four terminals prevents the use of low cost three-terminal packages such as industry standards TO-220, DPAK, TO-5, and equivalents. Summary of the Present Invention It is therefore an object of the present invention to provide a three-terminal semiconductor chip which can be used in a switched mode power supply. The present invention is defined in claim 1. Briefly, the chip has one pin for power switching, one pin for ground and one pin for accepting a combination of a feedback control signal and bias supply voltage to operate the chip. A feedback extraction circuit provides for separating the feedback signal from the power supply voltage within the chip by sensing the excess current flow through a shunt regulator. The power supply of invention is adapted to the semiconductor chip in that a combining means is provided for adding the feedback voltage to the bias voltage and producing a composite signal which is separated into its components by the chip. An advantage of the present invention is that an integrated circuit is provided that allows for a simple fully integrated power supply chip with very few pins and external components. A further advantage of the present invention is that an integrated circuit is provided that is economical. An advantage of the present invention is that an integrated circuit is provided that eliminates a high voltage pin and a high voltage transistor area conventionally necessary for an on chip pre-regulator. An advantage of the present invention is that an integrated circuit is provided that allows for a fully integrated switching power supply with only one high-voltage pin, a low-voltage pin and ground. These and other objects and advantages of the present invention will no doubt become obvious to those of ordinary skill in the art after having read the following detailed description of the preferred embodiment which is illustrated in the various drawing figures. IN THE DRAWINGS Fig. 1 is a schematic diagram of a prior art power supply; Fig. 2 is a schematic diagram of a switched mode power supply of the present invention and includes a three-terminal switched mode power supply chip; Fig. 3 is a block diagram of the switched mode power supply chip included in Fig. 2; Fig. 4 is a schematic diagram of a feedback extractor, a Vs regulator and switching-noise filter, an undervoltage detector, and high voltage start-up regulator that are a part of the switched mode power supply chip included in Fig. 2; and Fig. 5 is a chip map diagram of the switched mode power supply chip included in Fig. 2 showing the relative size of the high voltage MOSFET. DETAILED DESCRIPTION OF THE EMBODIMENTS Fig. 2 illustrates a power supply embodiment of the present invention, referred to by the general reference numeral 60. The power supply 60 comprises a full-wave bridge rectifier 62, a filter capacitor 64, a transformer 66 with a primary winding 68 and a pair of secondary windings 70 and 72, a diode 74 and a capacitor 76 that provide DC output, a diode 78 and a capacitor 80 that provides a voltage Vbias, a compensated error amplifier 82, an opto-isolator 84, a three-pin switched mode power supply chip 86 and a Vbias smoothing capacitor 88 located near chip 86. V bias is feed through opto-isolator 84 to provide combined DC output feedback and operational power (FB/VS) to a controller 90. At power start-up, Vbias will be zero and chip 86 will be without power because primary winding 68 will be open and no voltage will be induced into secondary winding 72 because chip 86 is not switching. To initiate such switching, a low voltage is tapped from an internal junction within a high voltage MOSFET 92. High voltage is present at the switched end of primary winding 68 when MOSFET 92 is off. Chip 86 therefore needs only three pins, OUT, GND and FB/VS, and may be mounted in an inexpensive plastic TO-220 industry standard type package. MOSFET 92 is preferably similar to that described in United States Patent 4,811,075, issued March 7, 1989, to Klas H. Eklund. An insulated-gate, field-effect transistor and a double-sided, junction-gate field-effect transistor are connected in series on the same semiconductor chip to form a high-voltage MOS transistor. An extended drain region is formed on top of a substrate of opposite conductivity material. A top layer of material, similar to the substrate, is formed by ion implantation through the same mask window as the extended drain region. The top layer covers only a middle part of the extended drain which has ends that meet with a silicon dioxide layer above. Current flow through the extended drain is controlled by the substrate and top layer which pinch-off the extended drain between them in a familiar field-effect fashion. The drift region of the main power MOSFET 92 is used to drop the high line voltage to low voltage for biasing chip 86. Chip 86 accepts a combined feedback signal (Ifb) and internal low voltage supply current (Is) on a single pin. The supply current is approximately one milliamp for CMOS versions of chip 86. The supply current also serves as a bias current for the output of opto-isolator 84. Opto-isolator 84 typically requires a bias current of 0.5-2.0 milliamps to operate optimally. In prior art power supplies, the opto-isolator bias current is in addition to current required by the switched mode power supply chip. The feedback signal secondary winding 70 modulates the current through the output transistor of opto-isolator 84. The feedback modulation is extracted from the DC supply current by controller 90. Fig. 3 illustrates that three-terminal regulator chip 86 comprises MOSFET 92, a bandgap and thermal shutdown 94, a functional block 96, an oscillator (OSC) 98, a comparator (COMP) 100 and a pulse width modulator (PWM) 102. An extracted feedback signal (Vfb) is output from block 96 and applied to COMP 100. MOSFET 92 comprises the equivalent of a high voltage JFET 104 with a grounded gate and a low voltage MOSFET 106. A tap 105 provides power from the junction of JFET 104 and MOSFET 106. As illustrated in Fig. 4, functional block 96 comprises a feedback extractor 108, a Vs regulator and switching-noise filter 110, an undervoltage detector 112, and high voltage start-up regulator 114. Regulator and filter 110 regulates the Vs voltage by comparing a bandgap reference voltage (Vbg) to a fraction of voltage Vs, as determined by the ratio of a group of resistors 116, 118 and 120. An error amplifier comprising a set of three transistors 122, 124 and 126, a pair of transistors 128 and 130, and a resistor 132. The output of the error amp drives a shunt transistor 134. As long as there is sufficient supply current being input to FB/VS, the voltage Vs will be in regulation and any excess current will be shunted to ground through transistor 134. This excess current is mirrored and converted into an extracted feedback voltage (Vfb) by a transistor 136 and a resistor 138. During a power-up, the high voltage startup regulator 114 and capacitor 88 (Fig. 2) provide the operating current and the voltage to start chip 86. Once the power supply 60 is in operation, the secondary winding 72 and V bias voltages begin to rise. When the DC output voltage (Fig. 2) reaches a predetermined regulation level, error amplifier 82 turns on a LED in opto-isolator 84. This, in turn, drives the output of opto-isolator 84 which starts conducting supply current to chip 86. The current continues to increase until an excess current through transistor 134 is sufficient to bring Vfb into the active range of the sawtooth waveform (1-2 volts) from OSC 98 (Cosc, Fig. 3), which is applied to the inverting input of COMP 100. This sequence initiates voltage regulation in power supply 60. When Vfb is above the normal active range, a maximum-on pulse width is sent to the output switch MOSFET 92, resulting in maximum power output during start up. When Vfb is at or below the active range, the pulse width sent to MOSFET 92 will be minimum or zero. The feedback loop automatically adjusts the pulse width to remain in the active range to provide regulation of the output voltage at secondary winding 70. Stray switching currents in the Vs node from OSC 98, PWM 102 and power MOSFET 92 must be prevented from contaminating Vfb output. A low pass filter is included in regulator and filter 110 using a miller capacitor 140 coupled to transistor 124. The cutoff frequency is approximately five KHz, which is low enough to effectively filter the high frequency switching noise (e.g., 100 KHz to 500 KHz) from modulating the gate of transistor 134. However, this cutoff is high enough compared to the dominant pole of the regulator loop (e.g., 0.1 Hz to 100 Hz) so as to not affect the closed loop servo control stability. Power supply current frequency components in the feedback signal frequency range (e.g., one KHz to ten KHz) can cause instability in the power supply loop. For example, if the supply current consumption of chip 86 varies with the pulse width applied to MOSFET 92, an in-band signal would appear at Vfb and could result in an internal positive or negative feedback. The supply current should be independent of pulse width because nodes, such as the gate of MOSFET 92, are charged and discharged once every cycle, regardless of pulse width. The net DC current is zero. Near zero pulse width, there may be an exception because the gate may not fully charge before the next discharge. This could cause some jitter at near zero load, which can be dealt with in several ways. For example, a resistor connected to input of a gate driver stage will consume current in the off state of MOSFET 92 that increases when the pulse width decreases, thus negating the problem. Fig. 5 illustrates the large amount of chip area that is required by high voltage MOSFET 92. JFET 104 consumes the greatest share of space.

Claims: A sermiconductor chip (86) comprising a first terminal (OUT) for providing electrical connection to a load (66), a second terminal (GND) for providing electrical connection to ground or reference, operational power receiving means for receiving bias voltage (V bias ), power switching means (92) for providing on-off switching of said load (66), and a controller (90) including a pulse width modulator (102) for controlling said power switching means (92) dependent upon a feedback signal, characterized in that said operational power receiving means includes a single third terminal (FB/VS) to be connected to a composite signal which combines said feedback signal (FB) and said bias voltage (V bias ), and a feedback and bias separation means (96, 108, 110) for extracting the feedback signal (V fb ) from the bias voltage (V bias ). The chip of claim 1, wherein said feedback and bias separation means (96, 108, 110) includes a regulator means (108, 110) which shunts a current in excess of that needed for the chip (86) and forms said extracted feedback signal (V fb ) from said shunted current. The chip of claim 2, wherein said regulator means (108, 110) includes a shunt transistor (134) controlling a mirroring transistor (136) in series to a resistor (138) at which the extracted feedback signal (V fb ) is tapped. The chip of claim 2 or 3, wherein said regulator means comprises a voltage regulation means (110) which has an input connected to said third terminal (FB/V S ) and an output connected to said pulse width modulator (102). The chip of claims 1 to 4, wherein said power switching means (92) includes series transistors (104, 106) connected between the first and second terminals (OUT, GND) and being controlled according to said extracted feedback signal (V fb ). The chip of claim 5, wherein said series transistors (104, 106) comprise a first transistor (104) which is a junction-type field effect transistor, and a second transistor (106) which is a metaloxide semiconductor field effect transistor, the drain of said first transistor (104) being connected to the first terminal (OUT), the gate electrode to the second terminal (GND) and the source electrode to a line (105) for providing start-up power, and the source of said second transistor (106) being connected to the second terminal (GND), the gate electrode to the controller (90, 102) and the drain to said start-up power line (105). The chip of claim 6, wherein said start-up power line (105) is connected to a start-up regulator (114) which is effective to power-up the chip (86) during start. A power supply comprising rectification means (62) for converting a AC line voltage to a high voltage DC; a transformer (66) including a primary winding (68) and two secondary windings (70, 72); each thereof being provided with DC output means (74, 76; 78, 80), the first secondary winding (70) delivering a regulated DC output voltage and a feedback voltage (FB), the second secondary winding (72) delivering a bias voltage (V bias ); a combining means (84) for adding said feedback voltage (FB) to said bias voltage (V bias ) and producing a composite signal; and said semiconductor chip (86) according to any of claims 1 to 7, the first terminal (OUT) thereof being connected in series to said primary winding (68) and said rectification means (62), the second terminal (GND) thereof being connected to ground or reference, and the third terminals (FB/VS) thereof being connected to said combining means (84). The power supply of claim 8, wherein said combining means (84) includes an opto-isolator having a transistor which is connected to said bias voltage (V bias ), and a light-emitting diode controlled by an error amplifier (82) which is coupled to said first secondary winding (70). The power supply of claim 9, wherein a capacitor (88) is for smoothing the current from said combining means (84).

Inventors: BALAKRISHNAN BALU, BALAKRISHNAN, BALU
Applicants: POWER INTEGRATIONS INC, POWER INTEGRATIONS, INC.
Application year: 1993
Main classification: H02M3
IPC codes: H02M3