SEMICONDUCTOR COMPONENT

Abstract: Transistors for controlling high currents are composed of a large number of paralleled transistor elements (2) which are integrated in a semiconductor chip (1). In order to minimise the forward resistance through the semiconductor chip, the sources (3) and the drains (4) of the transistor elements are arranged on the same side of the semiconductor chip. The sources and the drains of the transistor elements and the source (31) and the drain (32) of the transistor component proper are contacted with one another by means of conductors (3, 4; 10, 11; 13, 14) arranged on at least two different levels, the conductors on a level more distant from the semiconductor chip being fewer than those on a level closer to the semiconductor chip, resulting in a small distance between the element electrode and the component electrode and, consequently, a small contribution to the forward resistance from the contacting.

Description: SEMICONDUCTOR COMPONENT This invention relates to a semiconductor component having at least a first and a second component electrode and comprising a plurality of semiconductor elements whic are integrated in a semiconductor chip and which each include at least a first and a second element electrode provided on the same side of the semiconductor chip, the first element electrodes being connected to the first com ponent electrode, and the second element electrodes being connected to the second component electrode. When controlling electrical power, the forward resis tance of the control elements should be as low as pos¬ sible. Combining a high breakdown voltage and a low for- ward resistance, thyristors are often used as control ele ments. However, thyristors have a forward voltage drop of about 1 volt, which is a disadvantage. Consequently, thy¬ ristors are less suitable for controlling electrical powe at low voltages. Transistors, which have a lower forward voltage drop or none at all, may instead be used. Normally, transistor for high currents have their source and their drain arranged on either side of the semiconductor chip in whic they are made. As a result, the forward resistance of suc transistors at least equals the resistance through the semiconductor chip. The forward resistance caused by the semiconductor chip can be reduced by arranging the drain and the source on the same side of the semiconductor chip However, the forward resistance will nevertheless be high when controlling high currents. The reason for this will be explained below. When used for controlling high currents, a large num ber of transistors have to be connected in parallel. The greater the number of transistors that can be arranged on a given surface of a semiconductor chip, the higher the currents that can be directed through this surface. Since transistor density may today exceed 100,000 transistors 2 per cm , it will be appreciated that contacting has to involve conductors of minute dimensions if it is to be possible to contact the sources and the drains on the sam side of the semiconductor chip. However, minute conductor will have a considerable resistance, which in turn leads to a high forward resistance of the transistor component formed by the paralleled transistors. EP 0 218 529 discloses a field-effect transistor com posed of a large number of field-effect-transistor ele- ments integrated in a semiconductor chip. Each transistor element has a source area, a drain area and a gate area. The source and drain areas are arranged in a chequered pattern. Across the semiconductor chip extend diagonally parallel conductors alternately connecting the source and drain areas to a common source electrode and a common drain electrode, respectively, the common electrodes bein arranged adjacent to the source and drain areas. The dia¬ gonal conductors are arranged on two levels, the conduc¬ tors most distant from the semiconductor chip extending across most of the conductors closest to the semiconducto chip and being spaced apart therefrom by a dielectric layer through which contacts extend. Such an arrangement on different levels reduces current density and resistanc without there being any need of increasing the width of the conductors. However, the forward resistance is never¬ theless high, the average distance between the individual transistor elements and the common electrodes being consi derable. One object of the present invention is to provide a semiconductor component of lower forward resistance than known semiconductor components of similar type. Another object of the invention is to provide a semi conductor component suited for controlling high currents and having a lower forward voltage drop than known semi- conductor components for controlling high currents. A further object of the invention is to provide a semiconductor component for controlling high currents, enabling higher current densities than known components of similar type. These objects are attained by a semiconductor com¬ ponent having the distinctive features recited in the appended claims. The element electrodes of the semiconductor compone being arranged on the same side of the semiconductor chi there is but a small contribution to the forward resis¬ tance from the semiconductor chip. Since contacting is performed on several levels with fewer conductors on a level more distant from the semiconductor chip than on a level closer to the semiconductor chip, there is a ver small distance from an element electrode to a component electrode and thus a low forward resistance. Unlike the prior art, in which the current flows substantially paral lel to the semiconductor chip from the element electrode to the component electrode, the current in the semiconduc tor component according to the invention flows substan¬ tially perpendicular to the semiconductor chip from the element electrode to the component electrode. In additio the current flows at least partly through conductors of lower resistance than the element electrodes, which also contributes to a small forward resistance. As the conduc¬ tors further are arranged on levels outside one another, a major part of the semiconductor surface can be occupied by the semiconductor elements, enabling a high current density. When a transistor, the semiconductor component is suitable for controlling high currents and has a small forward voltage drop. When controlling high currents, it is especially advantageous for the semiconductor compone to be a field-effect transistor whose voltage drop is purely resistive when the current approaches zero, unlike that of a bipolar transistor. Furthermore, a field-effect transistor requires less control power than a bipolar transistor. Some embodiments of the invention will now be described with reference to the accompanying drawings, in which Fig. 1 is a cross-sectional view of part of a semi- conductor chip; Fig. 2 is a top view of the semiconductor chip in Fig. 1; Fig. 3 is a perspective view of a semiconductor chip contacted according to the invention; Fig. 4 is a cross-sectional view taken along IV-IV i Fig. 3; Fig. 5 is a perspective view of a block of joined conductors; Fig. 6 is a top view of an alternative embodiment of the block in Fig. 5; and Fig. 7 is a schematic side view of a package with a semiconductor chip mounted therein. Fig. 1 shows a cross-section of part of a semiconduc tor chip 1, in which are integrated a large number of MOS type field-effect transistors 2 which are to be connected in parallel to produce a transistor for controlling high currents. Each transistor 2 has three electrodes, namely a source electrode 3, a drain electrode 4 and a gate elec trode 5, all arranged on the same side of the semiconduc- tor chip 1 in order to minimise its contribution to the forward resistance. The source electrode 3 is in contact with a doped source area 6, the drain electrode 4 is in contact with a doped drain area 7, and the gate electrode 5 is arranged in an oxide area 8. As appears from Fig. 1, adjoining transistors 2 share the same source and drain electrodes 3, 4. As a result, there is room for more tran sistors on a given surface and a higher current density can be obtained than would be possible if the transistors had separate source and drain areas 6, 7. As can be seen in Fig. 2, the base, the source and the drain electrode have an elongate shape, and are common to the transistors in a row. In order to minimise the forward resistance of each transistor 2, the distance between the source area 6 and the drain area 7, i.e. the length of the gate electrode 5, should be as small as possible. For the same reason, the distance between the source electrode 3 and the outer edg of the source area 6, as well as between the drain elec¬ trode 4 and the outer edge of the drain area 7, should be minimised. It appears from the foregoing that the requirements of low forward resistance and high current density entail a semiconductor chip structure of very high geometric resolution, which in turn requires that the contacting achieved by means of the electrodes 3-5 likewise should have a very high resolution. In order to achieve such a high resolution, the semi conductor chip with the base, source and drain areas 6-8 is coated with a metal layer, which is patterned by litho graphy, thereby to produce the electrodes 3-5. Lithograph may, however, only be used if the thickness of the metal layer is of about the same order as its width. In contact ing with high resolution, the metal layer will consequent ly be fairly thin, giving a high resistance per unit length. Fig. 3, which is a perspective view, illustrates how this problem has been solved in a semiconductor component according to the invention. The figure shows the semicon¬ ductor chip 1 with the elongate source and drain elec¬ trodes 3 and 4 forming a first level of electrodes. Out¬ side the electrodes 3 and 4, there is provided an insu- lating layer 9, e.g. consisting of a polymer. Outside the insulating layer 9, there is provided a second level of elongate source electrodes 10 and drain electrodes 11, which are arranged at right angles to the electrodes 3, 4 on the first level. As appears from Fig. 4, the source electrodes 10 on the second level are connected to the source electrodes 3 on the first level by means of connections 12 extending through the insulating layer 9 at the points of intersec¬ tion of the source electrodes 3, 10 on the different levels. Correspondingly, the drain electrodes 11 are con¬ nected to the drain electrodes 4 by means of connections 12 extending through the insulating layer 9 at the points of intersection of the drain electrodes 4, 11 on the dif¬ ferent levels. The source electrodes 10 and the drain electrodes 11 on the second level are of greater width and thickness than the corresponding electrodes 3 and 4, respectively, on the first level. The electrodes 10, 11 on the second level therefore have a lower resistance and thus enable less dense contacting. Preferably, the width and the thickness of the electrodes on the two levels may differ by a factor of about 3. Outside the second level of electrodes 10, 11, there is provided another insulating layer 9 (only partly shown for greater clarity), a source electrode 13 and a drain electrode 14 being arranged outside this layer to form a third level. As on the second level, the electrodes 13, 1 on the third level are arranged perpendicular to the elec trodes 10, 11 on the preceding level. Furthermore, the electrodes 13, 14 are of greater width and thickness than the electrodes 10, 11 on the preceding level and thus hav a lower resistance so that they can be contacted on fewer locations. As already mentioned, such an arrangement with multi level electrodes and a decrease of the number of elec¬ trodes away from the semiconductor chip entails that the sources and drains of a large number of densely-packed transistors can be contacted with a small resistance on the same side of a semiconductor chip. The design of the connection between the gate area 8 of the individual tran sistors 2 and the common gate electrode of the component formed by the paralleled transistors is less critical in terms of resistance, since this connection conducts a muc lower current. The gate electrodes 5 of the transistors 2 can be connected to the common gate electrode at the peri phery of the semiconductor chip 1 or on one or more loca¬ tions on the surface of the semiconductor chip. Should th transistor be a lateral bipolar transistor, the connectio may also take place on the reverse side of the semiconduc tor chip 1. In the embodiment shown in Fig. 3, the electrodes ar arranged on three different levels. Of course, the elec¬ trodes may also be likewise arranged on an optional numbe of levels. As mentioned, contacting is preferably achieved by lithography, which is suitable for use with conductors having a width of up to about 0.1 mm. A further increase of the conductor dimensions is in no way advantageous, an when the conductors have attained this width, contacting should be performed externally by mechanical means. To this end, the electrodes 13, 14 on the uppermost level of electrodes formed by lithography are advantageously pro¬ vided with bosses 50 of some soft material, such as gold. The mechanical contacting between, on the one hand, the semiconductor chip with the different levels of elec¬ trodes formed by lithography and, on the other hand, the electrodes in the component package may also involve parallel, elongate electrodes. Fig. 5 illustrates an electrode arrangement suitable for contacting between the electrodes of the semiconducto chip and those of the package. This electrode arrangement is made up of a parallelepipedal block 15 comprising alternating source electrodes 16 and drain electrodes 17 which are glued to intermediate insulation 18. The source electrodes 16 and the drain electrodes 17 are longitudi¬ nally offset in relation to one another, such that only source electrodes 16 extend in one short side 15a of the block 15 and only drain electrodes 17 extend in the other short side 15b. Both source electrodes 16 and drain elec¬ trodes 17 extend in the long sides 15c of the block 15. I contacting, one or more semiconductor chips with the elec trodes thereon are applied against the long sides 15c of the block 15, and the source-electrode side 15a and the drain-electrode side 15b are connected to, respectively, the source electrode and the drain electrode of a packag Fig. 6 illustrates an alternative embodiment of the block shown in Fig. 5. Here, the block 15 comprises two long electrode bands 20, 21 which, provided with inter¬ mediate insulation (not shown), are wound onto a mandrel the band 20 being slightly offset in the lateral directi in relation to the band 21. After being thus wound onto the mandrel, the bands 20, 21 are fixed in relation to one another and to the insulation, e.g. by being impreg¬ nated with glue. This embodiment is advantageous, in tha the block 15 holds together even though the glue ages. After fixation, the mandrel is removed, and the surfaces to be used in contacting are worked so as to become perfectly flat. The surfaces 23 that are to be used for contacting with a package and thus only are to contain one electrod 20 or 21, are worked only slightly. The surfaces 24, on the other hand, that are to be used for contacting with the electrodes of the semiconductor chip are worked more deeply down to a level on which both electrodes 20, 21 extend. Also this embodiment of the block can be used for jointly contacting several semiconductor chips to a package. The space 25 occupied by the mandrel when making th block 15 is suitably used for contacting between the sem conductor chips and the gate electrode of the package. Fig. 7 schematically illustrates a mode of contacti between, on the one hand, the semiconductor chip 1 and t block 15 and, on the other hand, the block 15 and a pack age 30. A first and a second semiconductor chip 1 and 1' are so arranged that their electrodes face the block sur faces 24 which have been worked more deeply and in which both electrodes extend. The package 30 has two platelike electrodes 31, 32, a tight-fitting and insulating cover 33, and an external joint 34 symbolised by bolts. The mor lightly worked block surfaces 23a, which merely contain the one electrode band 20, e.g. in contact with the sourc electrodes of the semiconductor chips 1, 1' , are connecte to the one platelike electrode 31, which then constitutes the source electrode of the package. Correspondingly, the surfaces 23b, which merely contain the other electrode band 21, in contact with the drain electrodes of the semi conductor chips 1, 1' , are connected to the other plate- like electrode 32, which then constitutes the drain elec¬ trode of the package. With suitable dimensions and a suit ably strong joint 34, one may obtain high-precision and simultaneous connection of the semiconductor chips 1, 1' to the block 15 and of the block 15 to the platelike elec trodes 31, 32. In order that the entire component should have a low forward resistance, it is important that the transitions between the semiconductor chips and the block, as well as between the block and the electrodes of the package, have low resistance. This can be achieved by carefully working the surfaces of the block 15 and by chemically or electro lytically coating these surfaces with some suitable mate¬ rial. By using suitable solders, it then becomes possible to solder or weld together very low-ohmic connections between the block and the package. By using special metal alloys, such as eutectic gold alloys, cold welding may also be used between the semiconductor chip 1 and the block 15. In the inventive embodiments described, MOSFET tran- sistors are integrated in a semiconductor chip. Of course the invention is applicable to other types of transistors as well as to other semiconductor components, such as thy ristors, diodes, and triacs, that have at least two elec¬ trodes to be contacted on the same side of a semiconducto chip. Moreover, the transistors described are arranged in rows. Naturally, other configurations are conceivable as well, and the source and drain areas may e.g. be arranged in a checkered pattern. In the embodiments described, the electrodes on a level more distant from the semiconductor chip are broade as well as thicker than those on a level closer to the semiconductor chip. However, this is by no means neces¬ sary. It is sufficient that the former electrodes are either broader or thicker, thereby obtaining a larger cross-sectional area and, consequently, a lower resistanc than the electrodes on a level closer to the semiconducto chip. Also, the invention is not restricted to electrodes produced by lithography or by mechanical means. For instance, the electrodes can be formed by screen printing or electrolysis. Preferably, the level of electrodes clos est to the block 15 in the direction of the semiconductor chip can be electrolytically produced. It should also be observed that the electrodes can be made of different materials on different levels. Finally, it should be mentioned that the term "litho graphy" is meant to encompass all techniques using radia¬ tion for providing patterns in the design of electrodes and insulating layers, regardless of the wavelength or th nature of the radiation.

Claims: CLAIMS 1. A semiconductor component having at least a first and a second component electrode (31, 32) and comprising a plurality of semiconductor elements (2) which are inte¬ grated in a semiconductor chip (1) and which each include at least a first and a second element electrode (3, 4) provided on the same side of the semiconductor chip, the first element electrodes (3) being connected to the first component electrode (31), and the second element elec¬ trodes (4) being connected to the second component elec¬ trode (32), c h a r a c t e r i s e d in that the con¬ nection between the element electrodes and the associated component electrode comprises conductors (3, 4; 10, 11; 13, 14) arranged on at least two different levels outside one another, the conductors situated on a level more distant from the semiconductor chip being fewer than thos situated on a level closer to the semiconductor chip. 2. A semiconductor component as claimed in claim 1, c h a r a c t e r i s e d in that the conductors situate on a level more distant from the semiconductor chip have larger cross-sectional area than those situated on a leve closer to the semiconductor chip. 3. A semiconductor component as claimed in claim 2, c h a r a c t e r i s e d in that the conductors situate on a level more distant from the semiconductor chip are o greater width and thickness than those situated on a leve closer to the semiconductor chip. 4. A semiconductor component as claimed in claim 3, c h a r a c t e r i s e d in that the width and the thickness of the conductors increase by a factor of about 3 from a level situated closer to the semiconductor chip, to a subsequent level more distant from the semiconductor chip. 5. A semiconductor component as claimed in any one o the preceding claims, c h a r a c t e r i s e d in that there are provided substantially parallel conductors on each level of conductors, the conductors alternately form ing part of the connection between the first element elec trodes and the first component electrode and of the con¬ nection between the second element electrodes and the second component electrode. 6. A semiconductor component as claimed in any one o the preceding claims, c h a r a c t e r i s e d in that there is provided between successive levels of conductors an insulating layer (9) through which extend connections (12) between the conductors on the different levels. 7. A semiconductor component as claimed in any one o the preceding claims, c h a r a c t e r i s e d in that the conductors on successive levels are arranged at an angle to one another. 8. A semiconductor component as claimed in any one o the preceding claims, c h a r a c t e r i s e d in that the conductors on one level consist of a set (15) of interconnected conductors having at least one flat bound¬ ary surface in which extend all the conductors, at least one flat boundary surface in which extend only the con¬ ductors forming part of the connection between the first element electrodes and the first component electrode, and at least one flat boundary surface in which extend only the conductors forming part of the connection between the second element electrodes and the second component elec¬ trode. 9. A semiconductor component as claimed in claim 8, c h a r a c t e r i s e d in that the set (15) is made up of platelike conductors (16, 17) with an intermediate insulation (18), the conductors forming part of the respective connections being offset in relation to one another. 10. A semiconductor component as claimed in claim 9, c h a r a c t e r i s e d in that the conductors of the set (15) consist of at least two bands (20, 21) which are offset in relation to one another in their transverse direction and are wound, with an intermediate insulation, into a coil. 11. A semiconductor component as claimed in any one of the preceding claims, c h a r a c t e r i s e d in that at least the conductors on the level closest to the semiconductor chip (1) are produced by lithography. 12. A semiconductor component as claimed in any one of the preceding claims, c h a r a c t e r i s e d in that the conductors on at least one level are produced by electrolysis. 13. A semiconductor component as claimed in any one of the preceding claims, c h a r a c t e r i s e d in that the semiconductor elements are transistors, that the first element electrodes are source electrodes, and that the second element electrodes are drain electrodes. 14. A semiconductor component as claimed in claim 13, c h a r a c t e r i s e d in that the transistors are field-effect transistors.

Inventors: SVENSSON CHRISTER, TROLLE STEN, SVENSSON, CHRISTER, TROLLE, STEN
Applicants: ELSA ELEKTRONISKA SYSTEMS AND, SVENSSON CHRISTER, TROLLE STEN, ELSA ELEKTRONISKA SYSTEMS AND APPLICATIONS AB
Application year: 1993
Main classification: H01L21
IPC codes: H01L23