Semiconductor diamond and process for producing the same

Abstract: Semiconductor diamond comprising diamond doped with nitrogen atoms in a concentration of 1x10¹⁹cm⁻³ or more. Such semiconductor diamond has a carrier density which has substantially no temperature dependency in a temperature range of from room temperature to about 600 °C, and may be formed while the carrier density therein is controlled. The above semiconductor diamond having a low resistance even at room temperature is applicable to various devices, e.g., semiconductor devices exhibiting stable diode characteristics, transistor characteristics, etc., in operation thereof in a temperature range of from room temperature to a high temperature, under radiation and/or at high outputs.

Description: BACKGROUND OF THE INVENTION Field of the Invention The present invention relates to semiconductor diamond which may suitably be used in various semiconductor devices, such as diodes and transistors. Related Background Art Diamond is noted as a material applicable to a semiconductor device which is stably operative under severe circumstances, e.g., at high temperature, under radiation, etc., or is durably operative at high output. A reason for operativeness of diamond at high temperature is its band gap which is as large as 5.5 eV. In other words, intrinsic range, i.e., a temperature range where carriers of diamond semiconductor cannot be controlled is absent below 1400 °C. However, up to the present, n-type semiconductor diamond of low resistance has not been obtained. This has been a very serious barrier to the development and application of diamond devices. The document JP-A-4-238 895 discloses a single crystal or polycrystal diamond film which has been grown on diamond or other substrates and is doped with 1 to 1000 ppm nitrogen and phosphorus or sulfur in an amount of 0.1 to 50 % based on the nitrogen content. However, this citation does not teach or suggest semiconductor diamond nor a production process therefor which has the specific relationship of 100CB≥CN>CB, but also have the specific carrier density or half-value width of rocking curve of the present invention. SUMMARY OF THE INVENTION An object of the present invention is to provide n-type semiconductor diamond having a low resistance, and a process for producing the same. Another object of the present invention is to provide semiconductor diamond doped with nitrogen atoms and having a low resistance, and a process for producing the same. It is expected that, as in the case of silicon (Si), diamond becomes p-type semiconductor when doped with a Group III element, and becomes n-type semiconductor when doped with a Group V element. However, carbon atoms constituting diamond have such a small atomic radius and a high density that all impurities cannot be added to diamond, but elements having a relatively small atomic radius, such as boron, nitrogen and phosphorus, can be added to diamond. However, when diamond is doped with nitrogen atoms as a donor, the resultant donor level is very deep from conduction band (about 1 eV to 2 eV). Such a level is very low even in comparison with the acceptor level of boron (0.37 eV). Accordingly, when diamond is simply doped with nitrogen atoms as a donor, n-type semiconductor of low resistance cannot be obtained. As a result of earnest study, the present inventors have found that when the nitrogen concentration in diamond is increased to a very high value, carriers in the diamond can be transferred between nitrogen levels, and low-resistance conductivity can be obtained even at room temperature. The present invention is based on the above discovery. As described above, diamond semiconductor of low resistance may be provided by increasing the nitrogen atom concentration to a very high value. In consideration of a fact that pure Si with a band gap of 1.1 eV has a very high resistance, the concept of the present invention that semiconductor of low resistance is provided by using a dopant (nitrogen atoms) having an impurity level as low as 1 - 2 eV is quite different from the conventional concept. As a result of studies, the present inventors have found that doping diamond not only with nitrogen atoms, but also with boron atoms in a specific concentration range is very effective to solve the above-mentioned problem. Therefore, according to the present invention, there is provided n-type diamond semiconductor comprising diamond doped with nitrogen atoms and boron atoms, which has a concentration of nitrogen atoms (CN) and a concentration of boron atoms (CB) satisfying a relationship of 100CB≥CN>CB, and has a carrier density of 1x10 16 cm -3 or more. According to the present inventors' findings, it may be considered that low level of nitrogen provided in a case where diamond is doped with nitrogen atoms in a low concentration, is based on local distortion of the diamond crystal structure due to the low-concentration nitrogen atoms as a dopant. Further, according to the present inventors' findings, it may be considered that the lattice distortion caused by the doping of the diamond with the nitrogen atoms is reduced by further doping the diamond with boron atoms, whereby the nitrogen level is raised and conductivity of low resistance is consequently obtained even at room temperature. According to the present invention, there is further provided a process for producing semiconductor diamond by vapor deposition (or vapor-phase synthesis), comprising doping diamond with nitrogen atoms so as to provide a nitrogen atom concentration of 1x10 19 cm -3 or more, by use of a reactant gas comprising a nitrogen atom-containing gas. The present invention further provides a process for producing semiconductor diamond by vapor deposition, comprising doping diamond with nitrogen atoms and boron atoms so as to provide a nitrogen atom concentration (CN) and a boron atom concentration (CB) satisfying a relationship of 100CB≥CN>CB, and has a carrier density of 1x10 16 cm -3 or more, by use of a reactant gas comprising a nitrogen atom-containing gas and a boron atom-containing gas. The present invention further provides semiconductor diamond comprising diamond which is doped with nitrogen atoms in a concentration of 1x10 19 cm -3 or more. The present invention further provides n-type semiconductor diamond comprising diamond which is doped with nitrogen atoms and boron atoms respectively in a nitrogen atom concentration (CN) and a boron atom concentration (CB) satisfying a relationship of 100CB≥CN>CB, and has a carrier density of 1x10 16 cm -3 or more, and has a half-value width (or half-width) of rocking curve of 40 seconds or less based on a double-crystal X-ray diffraction method. Since diamond has a wide band gap of 5.5 eV, a temperature range corresponding to the intrinsic region is absent below 1400 °C at which diamond is thermally stable. In addition, diamond is chemically very stable. Further, diamond has characteristics inclusive of a thermal conductivity of 20 (W/cm·K), which is 10 times or more that of Si, good thermal radiation, large carrier mobility (electron mobility: 2000 (cm 2 /V·sec), hole mobility: 2100 (cm 2 /V·sec) at 300 K), small dielectric constant (K=5.5), high breakdown electric field (E=5x10 6 V/cm), etc. Based on these characteristics, a device for high frequency and/or large power can be formed by use of diamond. In the present invention, in order to obtain n-type semiconductor which is essential to a diamond device, a large amount of nitrogen atoms are added to diamond as a dopant, and a predetermined amount of boron atoms are added to diamond as a dopant together with a predetermined amount of nitrogen atoms. The present invention will become more fully understood from the detailed description given hereinbelow and the accompanying drawings which are given by way of illustration only, and thus are not to be considered as limiting the present invention. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a graph of temperature dependency of a carrier density in a diamond film doped with nitrogen obtained in Example 1. Fig. 2 is a graph of temperature dependency of a carrier density in a diamond film doped with nitrogen and boron obtained in Example 2. DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS Hereinbelow, preferred embodiments of the present invention will be described in more detail. (Semiconductor Diamond) The semiconductor diamond to which the present invention is applicable is not particularly restricted. For example, the diamond usable in the present invention may comprise artificial (high-pressure synthesis) bulk single crystal, or thin polycrystal film or thin single crystal film (epitaxial film) based on vapor deposition (or vapor-phase synthesis). Advantageous effects of the present invention may be provided regardless of the above kinds of diamond. The semiconductor diamond according to the present invention is n-type in view of the application thereof to a semiconductor device. The semiconductor diamond according to the present invention may preferably have a resistivity of 1x10 5 Ω·cm or less, more preferably 1000 Ω·cm or less (particularly preferably 100 Ω·cm or less). In the measurement of the above resistivity, for example, the following measuring conditions may preferably be used. Measuring method: Four probe method Measuring condition: Voltage (1-100 V) is measured under application of a constant current (10 µA - 1 mA). (Diamond Forming Method) In a case where a diamond film is formed by vapor deposition, for example, various methods as described below may be used. 1) A method wherein electric discharge is conducted by use of a DC or AC electric field so as to activate a raw material gas (or reactant gas). 2) A method wherein a thermoelectron emitting material(or (or thermionic emission material) is heated to activate a raw material gas. 3) A method wherein a surface on which diamond is to be grown is bombarded with ions. 4) A method wherein a raw material gas is excited by light such as laser beam and UV rays. 5) A method wherein a raw material gas is burned. All of these methods may be used in the present invention. Advantageous effects of the present invention may be provided regardless of the above kinds of diamond-forming method. In the present invention, it is preferred to use a CVD (chemical vapor deposition) process in order to dope diamond with nitrogen atoms and/or boron atoms, since the amount of a dopant to be added to the diamond may easily be regulated in the CVD process. (CVD Process) The reactant gas (or raw material gas) to be used in the CVD is not particularly restricted, as long as diamond can be deposited or grown on a substrate. More specifically, for example, it is preferred to use a mixture gas comprising CH 4 diluted with H 2 , a mixture gas comprising ethyl alcohol or acetone diluted with H 2 , a mixture gas comprising CO diluted with H 2 , etc., as the reactant gas. In the case of formation of diamond doped with nitrogen atoms, it is preferred that a nitrogen atom-containing gas is added to the above reactant gas in an amount corresponding to a desired concentration of nitrogen atoms in the semiconductor diamond to be formed. As the nitrogen atom-containing gas, for example, it is preferred to use N 2 , N 2 O, N0 2 , NH 3 , etc. In the present invention, in the case of formation of diamond doped with nitrogen atoms and boron atoms, it is preferred that a nitrogen atom-containing gas and a boron atom-containing gas are added to the above reactant gas in amounts respectively corresponding to a desired concentration of nitrogen atoms and a desired concentration of boron atoms in the semiconductor diamond to be formed. As the boron atom-containing gas, for example, it is preferred to use B 2 H 6 , B 2 O 3 , B 2 (CH 3 ) 3 , B 2 (OCH 3 ) 3 , etc. (High Pressure Synthesis) In a case where high-pressure synthesis is used for diamond formation, there may be used a method wherein a raw material, a solvent and/or a nitrogen-containing raw material are loaded into a high-pressure synthesis vessel to form nitrogen-containing diamond by the high pressure synthesis, a method wherein a raw material containing nitrogen and boron is loaded into a high-pressure synthesis vessel to form diamond containing nitrogen and boron by the high pressure synthesis, etc. Advantageous effects of the present invention may be provided regardless of the above kinds of diamond-forming method. (Ion Implantation) In the present invention, a method of adding nitrogen and boron by ion implantation may also be used. In such a case, in general, it is not easy to obtain the above-described advantageous effects in the case of a sample immediately after the sample is subjected to the ion implantation. However, it is possible to obtain the above-described advantageous effects, e.g., by controlling a condition for the ion implantation (ion implantation at a high temperature, etc.), or a condition for processing or treatment for restoration of crystallinity (hydrogen plasma processing, etc.). (Concentration of Nitrogen Atoms) The concentration of nitrogen atoms (dopant) added to the semiconductor diamond according to the present invention may preferably be 1x10 19 cm -3 or more. In a case where diamond is doped with nitrogen atoms together with another dopant, the nitrogen atom concentration may preferably be 1x10 17 cm -3 or more in view of semiconductor characteristics. The above concentration of nitrogen atoms can be measured, e.g., by secondary ion mass spectrometry (SIMS). In the SIMS measurement, for example, the following conditions may suitably be used. (N analysis) (B analysis) Primary ion Cs + O 2 + Acceleration voltage 10 kV 15 kV Current 580 nA 2000 nA Raster size 250 µm square 250 µm square Analysis area diameter 62 µmΦ 62 µmΦ (Concentration of Boron Atoms) According to the present invention, the concentration of the nitrogen atom dopant (CN), and the concentration of the boron atom dopant (CB) satisfy the relationship of 100CB≥CN>CB, more preferably 10CB≥CN>CB, in view of a balance between characteristics of the n-type semiconductor and conductivity thereof. In such a case, the concentration of the nitrogen atoms may preferably be 10 17 cm -3 or more in view of conductivity. The above concentration of the boron atoms can be measured, e.g., by SIMS as described above. In this SIMS measurement, the measuring conditions (B analysis) as described above may suitably be used. (Carrier Density) In the semiconductor diamond according to the present invention, the carrier density (or carrier concentration) is 1x10 16 cm -3 or more, in view of conductivity. The above carrier density can be determined on the basis of measurement of a Hall coefficient (See, e.g., Masaharu Aoki and Yasuo Nannichi (translation) "Physics of Semiconductor", p.46, 1969, Sangyo Tosho, Tokyo). In the above measurement of the Hall coefficient, for example, the following measuring conditions may suitably be used. Magnetic field to be applied 5000 Gauss Sample current 0.01 - 1 mA (Current values in this range do not substantially influence the measured value of carrier density.) (Crystallinity) Crystallinity of the semiconductor diamond according to the present invention may be evaluated by a double-crystal method of X-ray diffraction. More specifically, in the semiconductor diamond according to the present invention, the half-value width of a rocking curve given by the double-crystal method of X-ray diffraction may preferably be 40 seconds or less, more preferably 20 seconds or less (particularly preferably 10 seconds or less). In the "double-crystal method of X-ray diffraction" used herein, in front of a second crystal C 2 which is a specimen in a single-crystal method, another crystal C 1 (a first crystal which functions as a monochromator and collimator) is positioned so as to enhance the parallelism and monochromaticity of the X-ray diffraction. In the present invention, the first and second crystals C 1 and C 2 are so arranged that reflecting directions of an X-ray beam on the first and second crystals C 1 and C 2 are opposite from each other (minus arrangement), and the order (m) of the reflection on the first crystal C 1 , and the order (n) of the reflection on the second crystal C 2 are the same (minus parallel arrangement). The "minus parallel arrangement" may provide very high resolving power with respect to angle. The above "rocking curve" means an intensity distribution curve of diffracted beam in a case where a monochromatic X-ray is applied to the crystal, and the crystal is rotated in the neighborhood of a direction satisfying the Bragg condition. The half-value width (ΔW D ) of a rocking curve measured by the above-described double-crystal method is approximately given by the following formula: (For minus arrangement) (ΔW D ) 2 = (ΔW 1 ) 2 + (ΔW 2 ) 2 + δ 2 where ΔW 1 and ΔW 2 respectively represent widths of Darwin plateaux of the first and second crystals, and δ = (Δλ/λ) (tan B1 - tan B2 ). In the above formula,  B1 and  B2 respectively represent Bragg angles of the respective crystals, λ represents the wavelength of the X-ray, and Δλ is a half-value width of a characteristic X-ray (e.g., 5.8x10 -4 angstrom for CuKα 1 ray). For more details of the above-mentioned "Double Crystal Method of X-ray Diffraction", Nishibayashi et al., "Transactions of the 53rd Autumn Applied Physics Conference", p408, 1992 (Evaluation of Diamond Single Crystal by Double-crystal Method)" may be referred to. In the measurement of the above-described rocking curve, the following conditions, for example, may preferably be used. X-ray tube 35 kV, 10 mA Diamond (004), parallel arrangement The present invention will be described in further detail with reference to a specific embodiment. Example 1 (not forming part of the present invention) A non-doped diamond layer was formed on a (100) plane of an artificial single crystal diamond substrate (Ib type) synthesized by high-pressure and high-temperature synthesis method, and on an Si substrate, respectively, by microwave plasma CVD. On the thus formed non-doped diamond layer, a nitrogen-doped diamond layer was formed, respectively, whereby two kinds of samples were prepared. The respective layers were formed typically under the following conditions. (Non-doped layer) H 2 flow rate 100 SCCM CH 4 flow rate 0.5 - 6 SCCM Pressure 40 Torr Power 300 W Substrate temperature about 800 °C Film thickness about 2 µm (Nitrogen-doped layer) H 2 flow rate 100 SCCM CH 4 flow rate 0.5 - 6 SCCM NH 3 flow rate 5 SCCM Pressure 40 Torr Power 300 W Substrate temperature about 800 °C Film thickness about 1 µm On the other hand, as comparative samples, two kinds of samples only including a non-doped diamond layer (film thickness: 2 µm) without a nitrogen-doped layer were also prepared. Conductivities of the films of the thus formed comparative samples could not be determined, because of their very high resistivities. The resistivities were above 10 10 Ω·cm. When the Hall effect of the film (nitrogen-doped layer) of the nitrogen-doped samples prepared above was measured, it was found that the type of conduction of the film was n-type. The nitrogen atom content of each nitrogen-doped layer was measured by SIMS, and the resistivity of each nitrogen-doped layer was measured by a four probe method. The following Table 1 shows the above measurement results (Table 1 shows a case where the nitrogen-doped layer was formed on the diamond substrate). METHANE CONCENTRATION CH 4 /H 2 SUBSTRATE TEMP. AMMONIA FLOW RATE NH 3 /CH 4 NITROGEN CONTENT cm -3 RESISTIVITY Ω·cm 0.5% 850°C 0.001 2×10 18 2×10 6 0.005 1×10 19 2000 0.01 2×10 19 200 0.1 2×10 20 30 1 2×10 21 5 10 5×10 21 2 6% 850°C 0.001 7×10 19 6×10 5 0.01 8×10 19 200 0.1 9×10 20 20 1 5×10 21 4 10 1×10 22 3 As shown in the above Table 1, n-type semiconductor diamonds of low resistivity were formed at nitrogen atom concentrations of 1x10 19 cm -3 or more in the nitrogen-doped film. In addition, when the temperature dependency of a carrier density in the nitrogen-doped film was investigated, the results as shown in Fig. 1 were obtained (Fig.1 shows a case where the nitrogen-doped films was formed on the diamond substrate). As shown in Fig. 1, it was found that the carrier concentration was not substantially affected by the temperature when the nitrogen atom concentration (N) was not less than a certain value. It was also found that, on the basis of the above measurement results, a resistivity of 1x10 5 Ω·cm or less could be obtained at carrier concentrations of 1x10 16 cm -3 or more. Nitrogen-doped films were formed in the same manner as described above, except that the film forming condition for the nitrogen-doped film was changed. The measurement results of the thus formed nitrogen-doped films are shown in the following Table 2 (Table 2 shows a case where the nitrogen-doped film was formed on the diamond substrate). METHANE CONCENTRATION CH 4 /H 2 SUBSTRATE TEMP. AMMONIA FLOW RATE NH 3 /CH 4 NITROGEN CONC. cm -3 RESISTIVITY Ω·cm 0.5% 950°C 0.1 1×10 20 50 850°C 0.1 2×10 20 30 750°C 0.1 4×10 20 30 1% 850°C 0.1 3×10 20 50 2% 850°C 0.1 4×10 20 25 4% 850°C 0.1 8×10 20 20 6% 950°C 0.1 8×10 20 30 850°C 0.1 8×10 20 20 750°C 0.1 9×10 20 20 In a case where nitrogen-doped films were formed on the Si substrates, there were obtained the same tendencies as in the results of Tables 1 and 2, and Fig. 1 (the case where the nitrogen-doped films were formed on the single crystal diamond substrates). In comparison with the case where the nitrogen-doped films were formed on the Si substrates, better nitrogen-doped films of lower resistivities were obtained in the case where the nitrogen-doped films were formed on the single crystal diamond substrates. Embodiment of the present invention A non-doped diamond layer was formed on a (100) plane of an artificial single crystal diamond substrate (Ib type), and on an Si substrate, respectively, by microwave plasma CVD. On the thus formed non-doped diamond layer, a diamond layer doped with nitrogen and boron was formed, respectively, whereby two kinds of samples were prepared. The respective layers were formed typically under the following conditions. (Non-doped layer) H 2 flow rate 100 SCCM CH 4 flow rate 0.5 - 6 SCCM Pressure 40 Torr Power 300 W Substrate temperature about 850 °C Film thickness about 2 µm (Nitrogen- and boron-doped layer) H 2 flow rate 100 SCCM CH 4 flow rate 0.5 - 6 SCCM B 2 H 6 (diluted with hydrogen, concentration: 100 ppm) flow rate 1 SCCM NH 3 flow rate 0.5 SCCM Pressure 40 Torr Power 300 W Substrate temperature about 850 °C Film thickness about 1 µm On the other hand, as comparative samples, two kinds of samples only including a non-doped diamond layer (film thickness: 2 µm) without a nitrogen- and boron-doped layer were also prepared. Resistivities of the films of the thus formed comparative samples were above 10 10 Ω·cm, similarly as in Example 1. When the Hall effect of the film (nitrogen- and boron-doped layer) of the thus formed nitrogen- and boron-doped samples was measured, it was found that the type of conduction of the film was n-type. The nitrogen atom content and boron atom content of each of the nitrogen- and boron-doped layers were measured by SIMS, and the resistivity of each nitrogen- and boron-doped layer was measured by a four probe method. The following Table 3 shows the above measurement results, i.e., nitrogen content, boron content, and resistivity of the film (Table 3 shows a case where the nitrogen and boron-doped layer was formed on the diamond substrate). METHANE CONC. CH 4 /H 2 SUBSTRATE TEMP. AMMONIA AMOUNT NH 3 /CH 4 DIBORANE AMOUNT B 2 H 6 /CH 4 NITROGEN CONTENT cm -3 BORON CONTENT cm -3 RESISTIVITY Ω·cm 0.5% 850°C 0.01% 0.5ppm 1×10 17 5×10 14 >5×10 6 0.01% 2ppm 1×10 17 2×10 15 20000 0.01% 20ppm 1×10 17 2×10 16 2000 0.01% 200ppm 1×10 17 2×10 17 p-type 0.1% 10ppm 2×10 18 1×10 16 >1×10 6 0.1% 200ppm 2×10 18 2×10 16 3000 0.1% 400ppm 2×10 18 4×10 16 600 0.1% 400ppm 2×10 18 4×10 17 300 0.1% 4000ppm 2×10 18 4×10 18 p-type 1% 2000ppm 2×10 19 2×10 18 30 5% 10000ppm 1×10 20 1×10 19 5 6% 850°C 0.01% 2ppm 1×10 18 2×10 17 300 0.1% 20ppm 1×10 19 2×10 18 20 1% 200ppm 1×10 20 2×10 19 3 10% 2000ppm 1×10 21 2×10 20 0.3 As shown in the above Table 3, n-type semiconductor diamonds of low resistivity were formed at nitrogen atom concentrations and boron atom concentrations satisfying a relationship of 100CB≥CN>CB in the nitrogen- and boron-doped film. In addition, when the temperature dependency of a carrier density in the nitrogen- and boron-doped film was investigated, the results as shown in Fig. 2 were obtained (Fig.2 shows a case where the nitrogen- and boron-doped film was formed on the diamond substrate). As shown in Fig. 2, it was found that the activation energy was reduced to a very small value in comparison with a film containing no boron atom, and a low resistivity was obtained even at room temperature. Nitrogen- and boron-doped films were formed in the same manner as described above, except that the film forming condition for the nitrogen- and boron-doped film was changed. The measurement results of the thus formed nitrogen-and boron-doped films are shown in the following Table 4 (Table 4 shows a case where the nitrogen- and boron-doped film was formed on the diamond substrate). METHANE CONC. CH 4 /H 2 SUBSTRATE TEMP. AMMONIA FLOW RATE NH 3 /CH 4 DIBORANE FLOW RATE B 2 H 6 /CH 4 NITROGEN CONTENT cm -3 RESISTIVITY Ω·cm 0.5% 950°C 1% 2000ppm 1×10 19 40 850°C 1% 2000ppm 2×10 19 30 750°C 1% 2000ppm 4×10 19 30 1% 850°C 1% 2000ppm 2×10 19 30 2% 850°C 1% 1000ppm 4×10 19 20 4% 850°C 1% 200ppm 1×10 20 3 6% 850°C 1% 200ppm 1×10 20 3 In a case where nitrogen- and boron-doped films were formed on the Si substrates, there were obtained the same tendencies as in the results of Tables 3 and 4, and Fig. 2 (the case where the nitrogen- and boron-doped films were formed on the single crystal diamond substrates). In comparison with the case where the nitrogen- and boron-doped films were formed on the Si substrates, nitrogen- and boron-doped films of lower resistivities were obtained in the case where the nitrogen and boron-doped films were formed on the single crystal diamond substrates. Example 3 Nitrogen-doped films, and nitrogen- and boron-doped films were respectively formed in the same manner as described in Examples 1 and 2, except that the films were formed on a (100) plane of natural IIa and Ia diamonds, respectively, as substrates. The measurement results of the thus formed nitrogen-doped films, and nitrogen- and boron-doped films were substantially the same as those obtained in Examples 1 and 2. As described hereinabove, according to the present invention, there is provided semiconductor diamond comprising diamond doped with nitrogen atoms in a predetermined concentration (preferably, concentration of 1x10 19 cm -3 or more). In the semiconductor diamond according to the present invention, the carrier density has substantially no temperature dependency in a temperature range of from room temperature to about 600 °C. In addition, the semiconductor diamond according to the present invention may be formed while the carrier density therein is controlled. The semiconductor diamond according to the present invention which has a low resistance even at room temperature, is applicable to various semiconductor devices, e.g., semiconductor devices which can exhibit stable diode characteristics or transistor characteristics, etc., in operation thereof in a temperature range of from room temperature to a high temperature, under radiation and/or at high outputs. From the invention thus described, it will be obvious that the invention may be varied in many ways.

Claims: Semiconductor diamond comprising diamond doped with nitrogen atoms and boron atoms respectively in a nitrogen atom concentration (CN) and a boron atom concentration (CB) satisfying a relationship of 100CB≥ CN>CB, and has a carrier density of lx10 16 cm -3 or more. Semiconductor diamond according to claim 1, which comprises diamond doped with nitrogen atoms in a concentration of 1x10 19 cm -3 or more. Semiconductor diamond according to claim 1, which comprises diamond doped with nitrogen atoms in a concentration of 1x10 19 cm -3 or more, and has a half-value width of rocking curve of 40 seconds or less based on a double-crystal X-ray diffraction method. A process for producing semiconductor diamond by vapor deposition, comprising doping diamond with nitrogen atoms and boron atoms so as to provide a nitrogen atom concentration (CN) and a boron atom concentration (CB) satisfying a relationship of 100CB≥CN>CB, and a carrier density of 1x10 16 cm -3 or more, by use of a reactant gas comprising a nitrogen atom-containing gas and a boron atom-containing gas so as to provide a predetermined nitrogen atom concentration. A process for producing semiconductor diamond according to claim 3, which comprises doping diamond with nitrogen atoms so as to provide a nitrogen atom concentration of 1x10 19 cm -3 or more, by use of a reactant gas comprising a nitrogen atom-containing gas. Semiconductor diamond according to claim 1, which has a half-value width of rocking curve of 40 seconds or less based on a double-crystal X-ray diffraction method.

Inventors: NISHIBAYASHI YOSHIKI, SIKATA SHINICHI, TOMIKAWA TADASHI, NISHIBAYASHI, YOSHIKI, SIKATA, SHINICHI, TOMIKAWA, TADASHI, NISHIBAYASHI, YOSHIKI, C/O ITAMI WORKS OF SUMITOMO, Sikata, Shinichi, c/o Itami Works of Sumitomo, TOMIKAWA, TADASHI, C/O ITAMI WORKS OF SUMITOMO
Applicants: SUMITOMO ELECTRIC INDUSTRIES, SUMITOMO ELECTRIC INDUSTRIES, LIMITED
Application year: 1993
Main classification: H01L29
IPC codes: H01L21, H01L29