Micropolarimeter, microsensor system and method of characterizing thin films

Abstract: A micropolarimeter comprises an analyzer (1) and a detector (3), typically a photodetector array, having a circular configuration of a number N of sectors. Analyzer (1) and detector (3) form a unit with the analyzer assigning different polarization values to the sectors, which contains no moving parts. For the analyser three different embodiments are proposed: a glass cone, covered with a polarizing thin film stack; a metal grid polarizing array; an array of polarizing waveguides. The micropolarimeter (14) is used preferably in a microellipsometer system which further comprises, also positioned on a microoptical table (6), light collimating means (7) and polarizing means (8). Light generating means (11) may also be integrated into the microsensor system. The microsensor system serves as tool for film diagnostics, especially optical characterization of thin films.

Description: The invention relates to microsensor systems and to a micropolarimeter in which the micropolarimeter is designed to measure polarization states of light beams. The micropolarimeter is the central component in the following applications: Ellipsometry for thin film diagnostics Laser beam diagnostics Diagnostics for polarization depending properties in optical fibers Analysis of optically active materials. A well established method for characterizing surfaces and thin films is ellipsometry. The known ellipsometer use discrete polarization optical components in various combinations. A detailed description is to be found in R.M.A. Azzam, N.M. Bashara, "Ellipsometry and Polarized Light", 1988, North Holland, Amsterdam. Ellipsometry is based on utilization of the variation of detected light intensity as a function of the polarization ellipse parameters. Typically the polarizer is fixed and the analyzer is synchronously rotated about the light beam axis at a constant angular velocity, which is shown in various publications like IBM Technical Disclosure Bulletin 18 (1975) 2031. The detector signal will exhibit periodic variations and is Fourier analyzed. Using the Fourier coefficients together with the known incident angle and the polarizer setting the ellipsometric angles are then derived. For instrument operation precise mechanical motion of components is required limiting the response time of the instrument and complicating its design. Instead of rotating components some polarimeter use modulation techniques modulating the phase and/or the azimuth of the beam. The analysis of the data obtained is, however, more complicated and expensive lock-in amplifiers and modulators are needed. US Patent 4 585 348 discloses an ellipsometer having no moving parts and a minimum number of optical components. This instrument consists of a static photometric polarimeter and measures statically only the reflected intensities whose polarization lie, respectively, parallel and perpendicular to the plane defined by the incident and reflected beams. However, this instrument determines only the quotient of the two polarization states. For a complete determination of the Stokes parameter a second measurement is necessary. In another kind of polarimetric systems moving or rotating elements are avoided by using multiple detector systems. IBM Technical Disclosure Bulletin 19 (1976) 1487 shows an arrangement using four beam splitters and four detectors which allows complete determination of the polarization state of light reflected from a sample directly in terms of measured Stokes parameters. The adjustment of the four independent beams, however, is very complicated and excludes the construction of a compact, small and fully-enclosed measuring apparatus. US Patent 4 158 506 discloses a realtime polarimeter with pulse mode. A broadened beam enters six photodetectors with four of the polarizers being tilted in steps of π/4 and two of them form an angle of π/2 being arranged behind a λ/4 plate. By electronically adding and subtracting all the four Stokes parameters may be determined. Due to the dimensions of conventional discrete polarizers the beam has to be strongly broadened which renders the characterization of small areas on a sample impossible without using additional optical elements. DE-A-1951920 describes a system for determining the plane of oscillation of polarized light by reflexion of the light of a plane. The analyzer is comprised of the four faces of a pyramid with a quadratic basal plane. The axis of the pyramid is parallel to the incoming light radiation and the tip of the pyramid faces the incoming light radiation. US-A-5 131 752 disloses a method for film thickness endpoint control using an ellipsometer. Enpoint control of a film being deposited or etched is achieved by uses of an ellipsometer that derives delta and psi coordingates of a polarized light beam reflected from the work piece during the course of processing. Measured film thickness is a function of the delta and psi coordinates and other parameters. Delta and psi coordinates of a selected end point (final film thickness) of the process are calculated, and an unbounded line through the endpoint perpendicular to the direction of a plot of delta and psi coordinates adjacent the endpoint is defined. As the processing continues an ERROR is generated that becomes zero when measured delta and psi coordinates are on the line. When this error changes sign, in the appropriate cycle and within a reasonable range of the endpoint, the desired thickness has been attained, and the process is stopped. The improved film thickness endpoint control is used in a rapid thermal processing system wherein temperatures are changed at a rate of 100°C or more to deposit or etch film on a substrate. Instead of using a fixed time and other fixed time parameters to control film thickness, the described precision endpoint control is employed to obtain increased accuracy of control of the rapid thermal processing system. EP-A-0228721 describes a semiconductive radial photodetector and apparatus comprising such a detector. A photodetector for use in an angular displacement measuring apparatus comprising a multiple photocell consisting of radially extending strip-shaped photodiodes. According to the invention, the diodes are connected alternately via switching electrodes to an output electrode, which is constituted by a conductive image-defining shield arranged above the switching electrodes and comprises two opposite bands, whose widths are substantially inversely proportional to their radii of curvature in order to reduce trouble by cross-talk. The photodetector may be an integrated circuit, which comprises besides the multiple photocell also a part of the processing circuit. The invention also relates to an apparatus for measuring angular displacements by means of such a photodetector. Systems with multiple detectors have the problem of an only limited number of independent channels. Therefore noise reduction by carrying out further independent measurements similar to those in arrangements with rotating elements is not possible. The measuring accuracy thus remains far behind the standard accuracy of conventional polarimeters and ellipsometers with rotating elements. Adding additional channels seems to be possible in principle, but unreasonnably increases the technical effort and the costs. It is an object of the present invention to provide a miniaturized measuring tool and a measuring concept which overcome the disadvantages of the prior art concepts and allow the use in on-line process control. This object and further positive effects are achieved by the invention as claimed. The micropolarimeter of claim 1 comprises a unit of an analyzer and a detector having a circular configuration of a number N of sectors. The analyzer assigns different polarization values to the sectors. The micropolarimeter is especially used as a detector in a microsensor system or in an arrangement of microsensor systems preferably for the following applications: For the control of the polarization properties of cw- or pulsed lasers the beam is directed onto the polarimeter, which delivers real time data. The main advantage of this measurement technique is the ability to determine the polarization state of each laser pulse separately. For the measurement of polarization dependent losses of optical fibers or integrated optical components like waveguides, light of defined polarization is coupled into the fiber or waveguide to be inspected. The micropolarimeter is used to analyse the polarization state at the output of the devices. The change of polarization can be used for the concentration determination of optically active components in solution. The measurement is done in transmission using polarized light. The change of the polarization state is detected in real time by the micropolarimeter. In this configuration reaction kinetics can be observed. In an ellipsometric arrangement for thin film diagnostics the micropolarimeter replaces the rotating analyzer. By substituting a continuously rotating single polarizing element by a miniaturized fixed detector this solution avoids any mechanical movement thus increasing the measuring accuracy and reducing the response time of the micropolarimeter drastically. The micropolarimeter allows the easy production of a cheap, miniaturized and compact sensor system which may be used for various applications and especially for on-line process control. Ways of carrying out the invention are described in detail below with reference to drawings showing only specific embodiments in which: Fig.1 is a preferred embodiment of the micropolarimeter Fig.2 shows a pile of plate polarizers Fig.3 is a cross section showing the principle of the micropolarimeter and the relative arrangement of cone and detector Fig.4 shows the principle of the grid polarizer, another preferred embodiment of the micropolarimeter Fig.5 gives an overview of the grid parameters Fig.6 shows some of the N sectors of the detector containing wave guides Fig.7 gives an example of a possible set-up of a microsensor system Fig.8 shows another possible set-up of a microsensor system Fig.9 is a representation of the measured transmission and the degree of polarization of the multilayer system of thin films on the cone Fig.10 is a simulation of the grid polarizer showing the calculated curves of the transmission and the degree of polarization. In Fig.1 a commercially available cone 1 of transparent material, preferably glass, is covered on its convex surface with a polarizer coating 2. The polished cone has a cone diameter that allows a bundle of light being caught as a whole, a typical value being approximately 1 mm. The dimension of the opening angle allows with light entering the cone parallel to the cone axis the polarizing properties of the polarizer coating 2 to take effect and to assign different polarization values to the detector 3 forming a unit with the cone 1. Generally the opening angle depends on the parameters of the multilayer system. In a preferred embodiment the cone is made of fused silica with a refractive index of 1.46, an angle at the base of 40 to 60 degrees, a height of 2mm and an outer diameter of 3.35 mm. The polarizer coating 2 comprises a multilayer system of transparent thin film layers. The basic principle of the cone polarizer may be understood from Fig.2 showing a pile of plate polarizers. The light is polarized by transmission through a pile of plates inclined to the incident radiation at Brewster's angle. This is well known in the literature under the topic "Pile of Plate Polarizer" e.g. A.Elliott et al, J.Opt.Soc.Am. 38, 212, 1948. The pile of plate polarizers can be realized by a system of thin film polarizers. In order to achieve a high degree of polarization, bigger than 10.000:1, it is necessary to have a great difference in the index of refraction n for the components of the film system on the convex surface of the cone 1, that means that the film system alternately shows layers with high and low refractive index. Suitable materials are magnesiumfluoride or siliconoxide as low refractive index materials, and titaniumoxide or zirconiumoxide as high refractive index materials. The coating of the convex surface may be carried out by conventional coating methods like sputtering or evaporation. In a preferred embodiment TiO 2 with a refractive index n=2.46 and MgF 2 with n=1.38 have been chosen. These materials may be evaporated in the same chamber while monitoring the optical thickness. The optical response of a similar system with 20 layers is to be seen in Fig. 9 showing the measured transmission Tp and the degree of polarization P of the multilayer system of thin films on the cone. The thickness of the TiO 2 layers is 60.5 nm, the thickness of the MgF 2 layers is 116.2 nm. This system leads to a degree of polarization greater than 10.000:1. Further optimization concerning the design of the film system is possible. With its basal surface the coated cone 1 is adjusted and mounted onto a detector 3 with a circular configuration having the same diameter. The detector is divided into a number N of sensitive sectors of the same size. The cone 1 assigns different polarization values to the sectors. The cone 1 with the polarizer coating 2 and the mounted detector 3 together form the micropolarimeter. The detector may be produced by known state of the art technologies like silicon planar technology. The fixing may be done by bonding or glueing with a transparent adhesive. The refractive index of the adhesive and the cone should have corresponding values to avoid interference between the surfaces of the cone 1 and the detector 3. The principle of the micropolarimeter and the relative arrangement of cone and detector are shown in Fig.3. The light to be investigated enters the cone parallel to the cone axis. In accordance to the spatial position and the orientation of the polarization ellipse different amounts of light pass through the cone onto the sensitive N sectors of the detector. In case of an even number of sensitive areas always two sectors of the detector facing each other are redundant and will integrate the same different part of the polarization ellipse. Therefore the number of sectors must be at least six to allow the determination of the elliptic parameters. To increase the accuracy a higher number of sectors is necessary. The number of sectors is however limited by the ratio of the sensitive sector area to the width of the bars between the sectors. Each sector has to be individually readable. The diameter of the input area of the micropolarimeter with typically 0.5mm to 1.5mm being smaller than the beam diameter of a light generating means like a laser allows the parallel reading of the single sectors of the detector and the further treatment of the measured data with a computer. In a preferred embodiment the detector is a photodetector array with 16 sectors of identical area in a complete circle. In another embodiment the detector has 64 sensitive sectors. The quantity measured is the power P i detected by a sector element corresponding to the surface of a single detector surface. It can be calculated in the following way: The N signals are used for the calculation of the ellipsometric parameters of the incoming light. Usually the detector contains N sensitive areas S (sensitive) separated by N non-sensitive areas. S gives the angular width and C i the angular position of a given sector. The ellipsometric parameters Δ and Ψ can be calculated from the measured data P i from the follwing relations: tan(Ψ) = m 0 sin( S ) S + m 1 m 0 sin( S ) S - m 1 cos(Δ) = m 2 m 0 2 sin 2 ( S ) S 2 + m 1 2 The m i can be obtained from the measurement of the intensity per element P i : In the case of an even number of sensitive areas, of the detector 3 with its circular configuration which are facing each other are redundant since they detect exactly the same polarization assigned by the cone 1. Thus, symmetry in the signals is assured when light incidents exactly in the optical axis of the cone. This symmetry of signals has the advantage that it may be used in a very easy way to adjust the micropolarimeter without further means for adjusting. Thus, the redundancy of the sectors does not only increase the measuring accuracy but also simplifies the adjusting of the micropolarimeter significantly. The adjustment can be done automatically by means of e.g. stepping motors or piezoelectric actuators until the symmetry of the signals on opposite sectors is reached. By substituting a continuously rotating single polarizing element by an array of miniaturized fixed polarizing sectors the response time of the micropolarimeter is reduced drastically. The fixed polarizing sectors being arranged in the center of the reflected beam analyze simultaneously the state of polarization instead of serially detecting it with a single rotating element. Each sector is connected to a single photodetector and by electronic readout the complete information about the polarization may be rapidly transmitted to a computer for further data reduction. Any mechanical movement is avoided which is very favourable for a cheap and miniaturized sensor system. In another embodiment of the micropolarimeter instead of the transparent cone 1 the N sectors of the detector 3 contain metal grids 4. It is known that a grid of parallel metallic wires reflects radiation of one polarization while transmitting the other, provided the wavelength of radiation is about 10 times larger than the period of the grid. This basic principle of a grid polarizer is shown in Fig.4, a survey of the theory is given in J.P.Auton, Applied Optics 6, 1023-1027, 1967. These grids are preferably fabricated by directly writing with an electron beam pattern generator into the resist covered sectors of the detector or by other suitable microlithographical methods including e.g. lift-off techniques. Thus, the steps of adjusting cone 1 and detector 3 and of assembling these parts to a micropolarimeter are avoided. One possible way of manufacturing the grid detector comprises coating of the active detector areas with a thin metal layer of Al or Cr, depositing electron beam resist, directly writing the grid structures into the resist, developping the resist and removing the unwanted metal stripes by etching. The direction of the grids 4 varies from sector to sector in steps of 2π/N. The grid parameters d, b and h are shown in Fig.5. The metal grids should have a grid constant of approximately λ/10, that is approximately 50 - 100 nm for applications in the visible spectral region. To get a high degree of polarization and high transmisssion the ratio of λ/d should be greater than five and the ratio of b/d should be about 0.5. The ratio of grid constant/λ should be about 1:1. In the past, this polarizer was always used in the infrared with wavelengths >10 µm. In a preferred embodiment for the visible spectral region with λ=670 nm the grids are made of Al or Cr with d= 100 nm, b= 50 nm and h= 100 nm. Fig. 10 shows the calculated curves of the transmission T and the degree of polarization P for a grid polarizer. In a further embodiment instead of the cone 1 the 2N sectors of the detector 3 contain waveguides 5 as shown in Fig.6. To increase signal intensity the detector surface is densely covered with waveguides positioned perpendicular to the surface of the detector with their axis lying substantially parallel to the optical axis of the micropolarimeter. The direction of the waveguides varies from sector to sector in steps of N/2π similar to the varying direction of the metal grids in the embodiment of Fig.4. The function of the wave guides is based on the known principle of selective damping of TM modes in a strip wave guide which is covered by a layer of a suitable metal due to excitation of surface plasmons as described e.g. in W.Karthe, R.Mueller "Integrierte Optik", Akademische Verlagsgesellschaft Geest und Portig, Leipzig, 1991. The production of a wave guide array may be accomplished with the LIGA technique described in W.Ehrfeld, D.Münchmeyer,"Three- dimensional microfabrication using synchrotron radiation, Nucl. Instr. and Meth. A303, North Holland, pp. 523,1991. With this technique a metallic negative form of the wave guide array may be produced allowing to produce the basic structure of the detector by injection molding of a transparent polymer like PMMA. Then the sides of the wave guides are covered with a buffer layer of low refractive index by fluorination out of the gas or the liquid phase. Coating by evaporating the buffer layer here is not possible due to the tight distances between the wave guides. The next step is metallizing with a surface plasmon active material by evaporation and galvanisation. After grinding the wave guide arrays produced in a batch mode process on the same wafer are separated and glued to the detector. Fig.7 gives an example of a possible set-up of a microellipsometer system. The different parts of the system are assembled on a microoptical table 6. This table can be constructed by a CNC milling machine with an accuracy better than 0.02 mm. The microoptical table 6 positions the elements of the ellipsometer relative to each other with the needed accuracy thereby defining the beam path and especially the angle of incidence onto the sample 9. The desired incident angle is reached when the beam reflected from the sample 9 enters the detector 14 in its optical axis. Adjusting of the sample may be carried out manually or by use of suitable elements like stepper motors or piezoelements. The approximate dimensions of the microoptical table 6 are: length = 50 mm, height = 45 mm and width = 10 mm. The further elements of the microellipsometer are means 7 for collimating light like a GRIN lens, means 8 for polarizing light like a polarizing cube and means 14 for detecting the change of polarization after reflection of the light 10 from a sample 9. The means 14 for detecting is a micropolarimeter of one of the embodiments as described above. A means 11 for generating light, preferably a laser or a powerful LED provides monochromatic, collimated and linear polarized light. This light is guided to the microoptical table 6 by means 12 for guiding like a multimode or a monomode fiber. The fiber may be fixed to the microsensor by a special LIGA made fiber coupling insert. This set-up of a microellipsometer system provides a very compact and small sensor which is suited for the use in the process line immediately after the respective layer formation steps. It has a large field of applications including thin film diagnostics and VLSI technology. With this design the laser 11 is kept outside the microoptical table and the compact microsensor system. One advantage of this feature is, that in case of laser failure it may simply be exchanged without distributing the microsensor itself and no cooling problems arise. In another embodiment the means 11 for generating light may be integrated within the microsensor. With the sensor described above it is possible to determine the orientation and the shape of the polarization ellipse. This is sufficient in most of the applications in thin film inspection. In order to obtain also the handiness of the elliptically polarized light, the set-up has to be modified as shown in Fig.8. A phase shifting beam splitter 13 or a beam splitter followed by a phase shifter is introduced into the beam path behind the sample 9 and deflects the light reflected from the sample via a λ/4 plate or an equivalent phase-shifting element to a second means 15 for detecting. The second means 15 for detecting is preferably a micropolarimeter of one of the embodiments as described above. This set-up allows to double the number of independant measurements without considerably changing the size of the microsensor. In addition the absolute phase of the polarizing ellipse may be determined with this set-up which is not possible with measuring tools containing just rotating analyzer elements.

Claims: Micropolarimeter comprising an analyzer (1) and a detector (3) forming a unit, wherein said analyzer (1) is a transparent cone (1) with said detector (3) on its basal surface; wherein said detector (3) has a circular configuration of a number N of sectors and wherein said analyzer (1) assigns different polarization values to said sectors. Micropolarimeter according to claim 1 wherein said transparent cone (1) has a polarizer coating (2) on its convex surface and wherein said polarizer coating (2) comprises a multilayer system of transparent thin film layers. Micropolarimeter according to claim 2 wherein said transparent thin film layers alternately show a great difference in their refractive index. Micropolarimeter according to claim 2 or 3 wherein said transparent thin film layers are made of materials comprising titaniumoxide, zirconiumoxide, magnesiumfluoride and siliconoxide and said transparent cone (1) is made of glass or fused silica. Micropolarimeter according to any of the preceding claims 1 to 4 wherein said detector (3) has a circular configuration of an even number of sectors and where the symmetry of the signal on opposite sectors can be used for the adjustment of the sensor with respect to the optical axis. Micropolarimeter according to any of the preceding claims 1 to 5 wherein those two of said sectors facing each other are redundant. Micropolarimeter according to any of the preceding claims 1 to 6 wherein said detector (3) comprises a multisector photodetector. Micropolarimeter according to claim 1 wherein said N sectors of said detector (3) contain metal grids (4)with the direction of said grids (4) varying in steps of 2π/N from sector to sector and with said grids (4) having a grid constant of approximately λ/10. Micropolarimeter according to claim 1 wherein said N sectors of said detector (3) contain waveguides (5)with the direction of said wave guides (5) varying in steps of 2π/N from sector to sector and with the axis of said wave guides (5) lying substantially parallel to the optical axis of said micropolarimeter. Polarimeter system comprising the micropolarimeter according to any of the preceding claims 1 to 9 preferably used as measuring means for detecting the polarization state of light beams, for the measurement of the polarization properties of pulse lasers, for the diagnostics of polarization depending properties of optical devices or for the analysis of optically active materials. Microellipsometer system comprising positioned on a microoptical table (6) means (7) for collimating light from light generating means (11) means (8) for polarizing light a micropolarimeter (14) according to any of the preceding claims 1 to 9 for detecting the change of polarization after reflection of the light from a sample (9). Microellipsometer system according to claim 11 further comprising positioned on said microoptical table (6) means for generating monochromatic light (11) means (12) for guiding light to said microoptical table (6). Microellipsometer system according to claim 11 or 12 further comprising positioned on said microoptical table (6) a phase shifting beam splitter (13) or a beam splitter followed by a phase shifter a second micropolarimeter (15) for detecting the change of polarization after reflection of the light from a sample (9) wherein said beam splitter (13) is positioned behind said sample (9) for deflecting said light reflected from said sample (9) to said second micropolarimeter (15). Method of characterizing thin films using a microellipsometer system according to any of the preceding claims 11 to 13 with the steps adjusting a sample (9) in a well defined position to said microsensor system guiding polarized light to said sample (9) detecting the light reflected from said sample with said micropolarimeter (14) or with said micropolarimeters (14, 15) determining the polarization and the intensity of said reflected light wherein said microellipsometer system is adjusted in a way that said reflected light enters said micropolarimeter (14) parallel to the axis of said micropolarimeter (14).

Inventors: ABRAHAM MICHAEL DR, EHRFELD WOLFGANG PROF DR, KIEFER ECKEHARD DR DIPL-CHEM, POKROWSKY PETER DR, STENKAMP BERND DIPL-PHYS, ZETTERER THOMAS DR, ABRAHAM, MICHAEL, DR., EHRFELD, WOLFGANG, PROF. DR., KIEFER, ECKEHARD, DR. DIPL.-CHEM., POKROWSKY, PETER, DR., STENKAMP, BERND, DIPL.-PHYS., ZETTERER, THOMAS, DR.
Applicants: IBM, INST MIKROTECHNIK MAINZ GMBH, INSTITUT FUER MIKROTECHNIK MAINZ GMBH, INTERNATIONAL BUSINESS MACHINES CORPORATION
Application year: 1993
Main classification: G01J4
IPC codes: G01J4, G01N21