Process for producing thin film by epitaxial growth

Abstract: In the manufacture of a thin film by epitaxial growth, defects such as cracking are avoided by increasing the deviation of the lattice constant of the resulting film in the direction of growth from the substrate. Preferably, the deviation is increased at the rate of (0.4 ∼ 9) x 10⁻⁴ %/ µ m.

Description: BACKGROUND OF THE INVENTION This invention relates to a process for producing a crystal film, and more specifically to a process for producing a crystal film by epitaxial growth. The epitaxial growth technology is extensively used in the manufacture of various crystal films for diverse applications, such as semiconductors, optical elements, magnetic parts, and magnetooptic elements. For the desired crystal growth it involves the contact of a liquid or gaseous material with the surface of a crystal substrate having a lattice constant close to that of the crystal to be grown. In this way a crystal film with good crystallinity can be made. For example, magnetic garnet, a well-known material for magnetooptic elements, e.g., Faraday rotation elements, is produced by liquid-phase epitaxial growth (LPE). The method uses a liquid-phase material and effects its crystal growth on the surface of a crystal substrate, such as Ca-Mg-Zr-doped GGG single crystal, so as to form thereon a film 100µm or more in thickness. When such a thick film is required, stresses frequently develop between the substrate and the crystal film, causing strains which, in extreme cases, can crack the film. It has been believed possible to avoid this problem by ensuring as close an agreement as possible between the lattice constant of the crystal substrate and that of the crystal film. However, mere agreement in the lattice constant does not solve the problem satisfactorily because, in fact, other parameters including the chemical compositions, thicknesses, and thermal expansion coefficients of the substrate and the crystal film have bearing upon the phenomenon. BRIEF SUMMARY OF THE INVENTION In view of the foregoing, the present invention has for its object to prevent stresses from being produced in the course of crystal film formation by epitaxial growth on a crystal substrate, and thereby avert the cracking problem. The invention provides a process for producing a crystal film by epitaxial growth on a crystal substrate and without any further epitaxial layer thereon, characterized in that initially the lattice constant of the substrate and that of the resulting crystal film are made close to each other and, as the crystal film grows, the deviation of the latter lattice constant of the crystal film from the initial value is intentionally increased until a predetermined lattice constant is attained. In this case, the deviation of the lattice constant may be positive or negative. With a magnetic garnet, for example, the magnitude of the lattice constant of the crystal film is increased as the film grows, up to a desired thickness. The invention further provides a single crystal film obtained by epitaxial growth on a substrate and without any further epitaxial layer thereon, in which said single crystal film has a lattice constant with a deviation from its initial value increased in the direction of growth from the substrate. DETAILED DESCRIPTION OF THE DRAWING FIGURE 1 is a graph showing the relationship between the thickness of the crystal film and changes in the lattice constant in Example 1 to 5 that handled crystalline garnet. DETAILED DESCRIPTION OF THE INVENTION In FIGURE 1 is illustrated how lattice constants were increased by changing the compositions of magnetic garnet with the growth of crystal films, as will be explained in detail later. No crack resulted from the film growth, even to a thickness of 700µm. The process of the invention is predicated upon a surprising discovery that once the lattice constants of the substrate and the crystal film were close to each other at the starting point, mutual deviation of the constants with the growth of the crystal would give favorable result contrary to the general belief. If the lattice constants were kept constant during the crystal growth as by convention the frequency of cracking would be higher than with the process of the invention. The mechanism of this phenomenon is yet to be clarified but the applicant infers the following mechanism. Cracks are usually expected when the difference in lattice constant is sufficiently large between the substrate and the crystal film, the nurturing temperature is sufficiently high and the thickness of the resulting crystal film is sufficiently large ( for example, 100µm or more for Bi-substituted garnet). Lacking of one or more of these conditions will suppress development of a large stress which could lead to cracks. During the initial stage of the crystal film deposition, if the initially-formed film portion has a lattice constant different from that of the substrate a curling is caused to occur by the so-called bi-metal effect. If deposition of the subsequent portion of the crystal film is effected along the radius of the curvature, this radius of curvature is kept substantially constant and stabilized. In such case, the radius of the curvature corresponds to the constant change in the lattice constant of the crystal film. On the other hand, if a crystal film having a less variation of lattice constant than the lattice constant corresponding to the radius of curvature is grown on the surface (For example, if the crystal has a constant value), the lattice at a location close to the surface experiences a stretching stress in the case of convex toward the crystal film ( That is, the lattice constant of the film during initial stage of growth is larger than that of the substrate) or a compression stress in the case of concave toward the crystal film ( That is, the lattice constant of the film is smaller than that of the substrate), whereby a crack is developed when the film thickness exceeds a certain level. Here, the deviation of the lattice constant during the initial stage of the crystal growth is caused by the difference in the coefficient of heat expansion. In other words, if the lattice constants are equalized at the ambient temperature, a large stress is developed if there is difference in the coefficient of thermal expansion, leading to cracking at the nurturing temperature. On the other hand,if the lattice constants are equalized at the nurturing temperature, a large stress is developed if there is difference in the coefficient of thermal expansion, leading to cracking when cooled to the ambient temperature after formation of the crystal film. Bi-substituted garnet has a coefficient of thermal expansion larger by about 1 × 10 -6 / °C than Ca-Zr-Mg doped GGG substrate. From this, the deviation at the nurturing temperature ( For example, at 800 °C) is calculated and then using the bi-metal model the radius of curvature at the initial film thickness(50 µm or less) is calculated to give about 1-2m, which, in turn, gives 0.5-1 × 10 -4 %/ µm. This value generally coincides with the experimental result. To what extent the lattice constants of the substrate and the crystal film should be close together at the starting point is not fully known, either. Generally, however, deviation up to about ± 0.2% from complete agreement is permissible, and crack-free conditions can be easily determined for each crystalline material to be handled. Changes in the lattice constant of a crystal film are effected through the control of the feed composition. In the LPE method, for example, the composition is adjusted in response to changes with time of the mixing ratio of the melt composition and of the nurturing temperature. In the vapor phase method(CVD method), on the other hand, the compositional ratio of the feed gas being introduced into the vapor-phase film forming chamber is changed with time. To be more concrete, the process of the invention, e.g., for the manufacture of a Bi-substituted magnetic garnet single crystal film by the LPE method, is carried out as follows. Feedstock metered so as to give a composition Bi x R 3-x Fe 5-w M w O 12 , in which R is one or more elements selected from the group consisting of Y, Ca, Pb, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Ti, Yb, and Lu; M is one or more elements selected from the group consisting of Al, Ga, In, Sc, Ti, Si, and Ge; and usually x and w are 0 to 2 each, is fed to form a crystal film by LPE on a nonmagnetic single crystal substrate, e.g., of Ca-Mg-Zr-doped GGG. In this way a Bi-substituted rare earth garnet material having near target crystallinity. With the lapse of time the nurturing temperature is lowered, the Bi proportion adjusted, and the lattice constant increased with the film thickness. Recited as parameters which affect the lattice constant are the total amount of the melt, the surface area of the substrate and the rate of growth of the film. Recited as parameters which decide the rate of growth of the film are ratios R 1 , R 2 , R 4 and R 5 of melt constituents as defined by the followings. R 1 =(Fe 2 O 3 +M 2 O 3 )/Σ R 3 O 3 , R 3 =(Bi 2 O 3 , + PbO) / B 2 O 3 , R 4 =(Fe 2 O 3 + M 2 O 3 + Σ R 2 O 3 ) /Total amount, R 5 =Bi 2 O 3 / PbO. More specifically, R 1 for a magnetic garnet is 5/3, while R 1 for a Bi-substituted garnet is set at 10 or more. Accordingly, with growth of the crystal film on a substrate, R 1 increases and R 3 , R 4 and R 5 decreases, although the changes are much smaller for R 3 and R 5 . In order to produce a film having a thickness exceeding 100 µm, these parameters, particularly R 1 and R 4 cannot be neglected. Experience shows that R 1 increases and R 4 decreases at a fixed nurturing temperature that the quantity of Bi is decreased contained in the film, resulting in the reduction of the lattice constant of the film. Accordingly, when a film having a uniform composition throughout the thickness is to be produced, it is required to lower the nurturing a temperature at a rate which takes these factors into consideration. On the other hand, when a film having lattice constants increasing in the direction of growth of the film, it is required to lower the nurturing temperature at a rate greater than the just-mentioned rate. As will be explained in the working examples below, it was found that a rate of change of the lattice constant within the range of (0.4∼9)× 10 -4 %/ µm gives good result. The present invention is also applicable to the manufacture of SiC and Si semiconductors and other crystals. Example 1 A composition consisting of Bi 2 O 3 , Tb 4 O 7 , Nd 2 O 3 and Fe 2 O 3 in a mixing ratio to give a magnetic garnet as below was used, and a single crystal of garnet having an average composition of Bi O , 7 Tb 2 , 1 Nd o , 2 Fe 3 O 1 2 having a lattice constant of 12.494A was formed by the LPE method at a temperature of 813°C on a nonmagnetic single crystal substrate of Ca-Mg-Zr-doped CGC having a lattice constant of 12.497 x 10 -10 m (12.497A) and a diameter of 5.08 x 10 -2 m (2 inches). The total melt amount of 2 kg, R 1 =24, R 3 =10, R 4 =0.12 and R 5 =0.3 were the conditions. Next, in the same way as described above, epitaxial growth was initiated at 813°C, and the resulting film was nurtured while the oven temperature was decreased at the rate of 0.6°C/hr and the lattice constant was changed at the rate of 1.9 × 10 -15 m/ µ m (1.9 × 10 -5 A/ µm) (1.5 × 10 -4 %/ µm). The lattice constant values given here were measured at 25°C (the same applying to the other examples). It was not until the resulting film was 700 µm thick when it cracked. Example 2 A feedstock similar to that of Example 1 was used, and a single crystal film of garnet of an average composition of of Bi O , 8 Tb 2 , 1 Nd O , 1 Fe 5 O 1 2 having a lattice constant of 12.491 × 10 -10 m (12.491 A) was formed by the LPE method at a temperature of 908°C on a nonmagnetic single crystal substrate similar to the one used in the preceding example. The total melt amount of 10 kg, R 1 =26, R 3 =10, R 4 =0.18 and R 5 =0.6 were the conditions. Next, in the same way as above, epitaxial growth was initiated at 908°C, and the resulting film was nurtured while the oven temperature was decreased at the rate of 0.1°C/hr until the film thickness reached 200 u m and at the rate of 0.3°C/hr from 200 µm onward and the lattice constant was changed at the rate of 1.0 × 10 -15 m/ µm (1.0 × 10 -5 A/ µm) (0.8 x 10 -4 %/ µm). The resulting film would not crack until it became 700 µm thick. Comparative Example 1 In Example 2 the epitaxial growth was effected in the following way. The nurturing was carried out while lowering the temperature at the rate of 0.1°C/hr and changing the lattice constant at the rate of 0.4 × 10 -15 m/ µm (0.4 × 10 -5 A/ µm) (0.3 × 10 -4 %/ µm). The resulting film cracked when it became 350 u m thick. Example 3 A composition consisting of Bi 2 O 2 , Ho 2 O 3 , La 2 O 3 , Y 2 O 3 , Fe 2 O 3 and Ga 2 O 3 in a mixing ratio to give a magnetic garnet as below was used, and a single crystal film of Bi 1 , 4 HO 0 , 1 La 0 , 2 Y 0 , 4 Fe 4 , 5 Ga 0 , 5 O 1 2 having a lattice constant of 12.504 x 10 -10 m (12.504 A) was formed by the LPE method at a temperature of 745°C on a nonmagnetic single crystal substrate of Nd 3 Ga 5 O 1 2 having a lattice constant of 12.502 × 10 -10 m (12.502 A). Next, in the same way as above, epitaxial growth was initiated at 745°C, and the resulting film was nurtured while the oven temperature was decreased at the rate of 1.2°C/hr and the lattice constant was changed at the rate of 2.9 x 10 -15 m/ µm (2.9 × 10 -5 A/ µm) (2.3 × 10 -4 %/ µm). It was not until the resulting film was 500 µm thick when it cracked. Comparative Example 2 In Example 3 the epitaxial growth was effected in the following way. The nurturing was conducted while lowering the temperature at the rate of 5.0°C/hr and changing the lattice constant at the rate of 12 × 10 -15 m/ µm (12 × 10 -5 A/ µm) (10 × 10 -4 %/ µm). The resulting film cracked when it became 150 µm thick. Example 4 A composition consisting of Y 2 O 3 , La 2 O 3 , Ga 2 O 3 and Fe 2 O 3 in a mixing ratio to give a magnetic garnet as below was used, and a single crystal film of an average composition of Y 2 , 9 La 0 , 1 Fe 4 , 5 Ga 0 , 5 O 1 2 having a lattice constant of 12.377 x 10 -10 m (12.377 A) was formed by the LPE method at a temperature of 745°C on a nonmagnetic single crystal substrate of GGG (Gd 3 Ga 5 O 1 2 ) having a lattice constant of 12.375 × 10 -10 m (12.375 A). Next, by the same procedure as described above, epitaxial growth was initiated at 745°C, and the resulting film was nurtured while the oven temperature was decreased at the rate of 1.2°C/hr and the lattice constant was changed at the rate of 1.0 × 10 -15 m/ µm (1.0 × 10 -5 A/ µm) (0.8 × 10 -4 %/ µm). It was not until the resulting film was 200 µm thick when it cracked. Example 5 A composition consisting of Bi 2 O 3 , Ga 2 O 3 , Yb 2 O 3 , and Fe 2 O 3 in a mixing ratio to give a magnetic garnet as below was used, and a single crystal film of an average composition of Bi 1 , 0 Gd 1 , 4 Yb 0 , 5 Fe 4 , 9 5 Ti 0 , 0 5 O 1 2 having a lattice constant of 12.495 x 10 -10 m (12.495 A) was formed by the LPE method at a temperature of 745°C on a nonmagnetic single crystal substrate of Ca-Mg-Zr-doped GGG having a lattice constant of 12.497 x 10 -10 m (12.497 A). Next, by the same procedure as described above, epitaxial growth was initiated at 745°C, and the resulting film was nurtured while the oven temperature was decreased at the rate of 1.2°C/hr and the lattice constant was changed at the rate of 2.3 x 10 -15 m/ µm (2.3 × 10 -5 A/ µm) (1.8 × 10 -4 %/ µm). The film resisted cracking until it was 700 µ m thick. Comparative Example 3 In Example 5 the epitaxial growth was effected in the following way. The nurturing was carried out while maintaining the temperature constant at 750°C and changing the lattice constant at the rate of -4.0 × 10 -15 m/ µm (-4.0 × 10 -5 A/ µm) (3.2 × 10 -4 %/ µm). The resulting film cracked when it became 50 µm thick. These examples and comparative examples demonstrate that the stress development can be avoided and hence cracking be prevented by formulating the crystal film to be grown so that its lattice constant is close to that of the substrate and setting the rate of change within the specific range of (0.4∼9) × 10 -4 %/ µm. As is clear from the foregoing examples, the present invention renders it possible to preclude stress development and cracking during the course of crystal film formation by epitaxial growth on a crystal substrate.

Claims: A single crystal film obtained by epitaxial growth on a substrate and without any further epitaxial layer thereon, in which said single crystal film has a lattice constant with a deviation from its initial value increased in the direction of growth from the substrate. The film of claim 1 in which the single crystal film has a gradient of composition in the direction of the growth from the substrate. The film of claim 1 in which the deviation of the lattice constant is increased at the rate of change of 0.4 × 10 -4 %/ µm - 9 × 10 -4 %/ µm. The film of claim 3 wherein the crystal film is a magnetic garnet. The film of claim 4 wherein the film has been obtained by liquid phase epitaxial growth. The film of any one of claims 1 to 5 wherein the film has a thickness of 100 µm or more. A process of producing a crystal film by epitaxial growth of a crystal on a substrate, and without any further epitaxial layer thereon, characterized in that the initial lattice constant of the crystal is close to the lattice constant of the substrate and, with the progress of growth, deviation of lattice constant of the crystal film from the initial lattice constant is increased until a desired thickness is obtained. The process of claim 7 characterized in that the magnitude of the lattice constant of the crystal film is increased with the progress of the growth until a desired thickness is obtained. The process of claim 8 in which the rate of change of lattice constant is in the range of (0.4 -9) × 10 -4 %/ µm. The process of claim 9 in which the crystal film is a magnetic garnet. The process of claim 10 in which said epitaxial growth is a liquid phase epitaxial growth. The process of any one of claims 7 to 11 wherein the film has a thickness of 100 µm or more. A single crystal film obtained by epitaxial growth on a substrate in which said single crystal film has a lattice constant with a deviation from its initial value increased in the direction of growth from the substrate at a rate of change of 0.4 0 × 10 -4 %/ µm - 9 × 10 -4 %/ µm. A single crystal film obtained by epitaxial growth on a substrate in which said single crystal film is a magnetic garnet and has a lattice constant with a deviation from its initial value increased in the direction of growth from the substrate. A single crystal film obtained by liquid phase epitaxial growth on a substrate in which said single crystal film has a lattice constant with a deviation from its initial value increased in the direction of growth from the substrate. A process of producing a crystal film by epitaxial growth of a crystal on a substrate, characterized in that the initial lattice constant of the crystal is close to the lattice constant of the substrate and, with the progess of growth, deviation of lattice constant of the crystal film from the initial lattice constant is increased at a rate of change in the range of (0.4 - 9) × 10 -4 %/ µm until a desired thickness is obtained. A process of producing a crystal film by epitaxial growth of a crystal on a substrate, characterized in that the crystal film is a magnetic garnet and the initial lattice constant of the crystal is close to the lattice constant of the substrate and, with the progress of growth, deviation of lattice constant of the crystal film from the initial lattice constant is increased until a desired thickness is obtained. A process of producing a crystal film by liquid phase epitaxial growth of a crystal on a substrate, in which process the initial lattice constant of the crystal is close to the lattice constant of the substrate and, with the progress of growth, deviation of lattice constant of the crystal film from the initial lattice constant is increased until a desired thickness is obtained.

Inventors: NAKATA AKIO, OIDO ATSUSHI, UCHIDA NOBUYA, YAMASAWA KAZUHITO, NAKATA, AKIO, OIDO, ATSUSHI, UCHIDA, NOBUYA, YAMASAWA, KAZUHITO, Nakata, Akio, c/o TDK Corporation, Oido, Atsushi, c/o TDK Corporation, Uchida, Nobuya, c/o TKD Corporation, Yamasawa, Kazuhito, c/o TDK Corporation
Applicants: TDK CORP, TDK CORPORATION
Application year: 1993
Main classification: C30B19
IPC codes: C30B19