Semiconductor contact via structure and method

Abstract: Initially, a first buffer layer (20) is formed over an insulating layer (16,18) in an integrated circuit. The first buffer layer (20) has a different etch rate from the insulating layer (16,18). A second buffer layer (22) is then formed over the first buffer layer (20), with the second buffer layer (22) having an etch rate which is faster than the first buffer layer (20). An isotropic etch is performed to create an opening (26) through the second buffer layer (22) and a portion of the first buffer layer (20). Because the second buffer layer (22) etches faster than the first buffer layer (20) the slant of the sideswalls of the opening can be controlled. An anisotropic etch is then performed to complete formation of the contact via.

Description: The present invention relates generally to integrated circuits, and more specifically to a method for forming contact vias in integrated circuits. As integrated circuit devices become more complex, greater numbers of interconnect layers are required to connect the various sections of the device. Generally contact vias are formed between interconnect layers to connect one layer to another. When multiple layers of interconnect are used in this manner, difficulties arise in forming upper interconnect layers and contact vias due to the uneven topographical features caused by the lower interconnect layers. The uneven topographical features of multiple interconnect layers are caused by forming the various interconnect layers above each other, resulting in the creation of hills and valleys on the surface of the device. Thus, the topography of contact vias and interconnect layers affects the ease of manufacturing of the integrated circuit device. Those skilled in the art will recognize it is difficult to get upper interconnect layers to maintain constant cross-sections when crossing over uneven topography. This leads to portions of the interconnect signal lines having a higher current density, leading to electromigration problems and related device failure mechanisms. Furthermore, step coverage problems can result in voids and other defects in the interconnect signal lines themselves, and in the contact vias formed between the interconnect lines. During the manufacturing process it is common to perform various techniques in an attempt to maintain a more planar topography. One technique known in the art is the deposition of phosphorous or boron doped reflow glass. The reflow glass tends to cover the hills and fill in the valleys on the surface of the device, resulting in a more planar surface. This technique however, requires a high temperature treatment in order for the glass to flow and stabilize. The high temperature treatment can be undesirable when the manufacturing process also requires silicidation of a refractory metal. Typically, refractory metals silicided can not sustain high temperatures. EPO 388862 attempts to provide a semiconductor device having a planarised surface and a contact between interlevel metalisation in which the interconnect is not exposed to the planarising layer. An oxide layer is provided at the region of the semiconductor at which a contact hole is to be provided. The oxide layer is formed to have an increased level with respect to the rest of the regions such that when an SOG layer is provided on the semiconductor device for surface planarisation, the oxide layer at the region of the device where the contact hole is to be provided becomes substantially flush to or projected above the level of the SOG. A PSG layer is formed over the whole structure and a contact hole is provided through the PSG and oxide layer. Patents Abstracts of Japan, vol. 011, no. 294 (E-544) 22nd September 1987 & JP-A-62 094 959 relates to a method to uniformize the depth of the tapered part of the contact hole in an insulating film between wirings. The insulating film is formed into three parts - a plasma oxide film is held between two plasma nitride films. The plasma oxide has an isotropic etching rate significantly slower than that of the plasma nitride films. The upper plasma nitride film is etched using an isotropic etch then an anisotropic etch is performed, to the lower wiring. Another problem encountered when forming contact vias is the creation of sharp corners in the sidewalls of the opening. Those skilled in the art will recognize that it is difficult to get overlying layers to adequately cover the sharp corners. For example, when aluminum is deposited over a via with sharp corners, the layer is thinner at the sharp corners. This thinning of the layer can also cause electromigration problems and related device failure mechanisms. Various techniques are used to alleviate the formation of sharp corners in vias. In one technique the contact via is formed by first performing an isotropic etch through a portion of a layer, followed by an anisotropic etch to complete formation of the opening., As those skilled in the art know, the resulting contact profile is not always free from sharp corners. Sharp corners can be formed at the top edges of the portions of the opening that are formed by the isotropic etch and the anisotropic etch. Therefore, it would be desirable to provide a method for forming contact vias which are free from sharp corners and also result in a planarized topography. It is also desirable that such a method can be performed at low to medium temperatures. Finally, it is desirable that such a method not significantly increase the complexity of the manufacturing process. According to one aspect of the present invention there is provided a method according to claim 1 for forming a contact structure in an integrated circuit, comprising the steps of: forming an insulating layer over an underlying region in the integrated circuit; forming a first buffer layer having a first etch rate over the insulating layer; forming a second buffer layer having a second etch rate over the first buffer layer, wherein the second buffer layer is removed faster than the first buffer layer during an etch step; and forming an opening through the second and first buffer layers and the insulating layer by performing a first etch followed by a second etch to expose a portion of the underlying region, characterised in that said first etch is an isotropic etch through the second and first buffer layers and said second etch is through the insulating layer. According to another aspect of the present invention there is provided a contact structure according to claim 17 in an integrated circuit, comprising: a conductive element; an insultiang layer comprising an undoped oxide layer overlying the conductive element and a spin on glass layer overlying the undoped oxide layer; a first buffer layer overlying the insulating layer, such first buffer layer having a first phosphorous doping level; a second buffer layer overlying the first buffer layer, such second buffer layer having a second phosphorous doping level higher than the first phosphorous doping level; an opening through the first and second buffer layers, the spin on glass layer, and the undoped oxide layer exposing a portion of the conductive element, wherein the opening has diagonally sloped sidewalls; and a conductive layer overlying portions of the second buffer layer and extending into the opening, wherein the conductive layer makes an electrical contact with the conductive element. The novel features believed characteristic of the invention are set forth in the appended claims. The invention itself however, as well as a preferred mode of use, and further objects and advantages thereof, will best be understood by reference to the following detailed description of an illustrative embodiment when read in conjunction with the accompanying drawings, wherein: Figures 1 - 2 are sectional views of an integrated circuit illustrating a prior art method of forming a contact via; and Figures 3 - 7 are sectional views of an integrated circuit illustrating a preferred method for forming contact vias according to the present invention. The process steps and structures described below do not form a complete process flow for manufacturing integrated circuits. The present invention can be practiced in conjunction with integrated circuit fabrication techniques currently used in the art, and only so much of the commonly practiced process steps are included as are necessary for an understanding of the present invention. The figures representing cross-sections of portions of an integrated circuit during fabrication are not drawn to scale, but instead are drawn so as to illustrate the important features of the invention. Figures 1 and 2 depict a prior art method for forming a contact via structure in an integrated circuit. Referring to Figure 1 , a contact structure will be built on an underlying region 1 in an integrated circuit. The underlying region 1 can be either a semiconductor substrate or an underlying interconnect layer. An insulating layer 2 is deposited over the device, followed by a first buffer layer 3 . A second buffer layer 4 is then deposited over the first buffer layer 3 . A photoresist mask 5 is deposited on the second buffer layer 4 , and patterned to define the location of a contact via. An opening 6 is created in the second buffer layer 4 by performing an isotropic etch. As can be seen, the sidewalls of the opening 6 are curved and sharp corners 7,8 are formed as a result of the istropic etch. Those skilled in the art will recognize that the sharp corners 7,8 can cause step coverage problems. Figure 2 illustrates the device after an anisotropic etch is performed to complete formation of the contact via 6 , and the photoresist mask 5 is removed. The anisotropic etch also creates sharp corners 9 in the sidewalls of the contact via 6 . Again, the sharp corners 9 can cause step coverage problems. Figures 3 - 7 depict a preferred method for forming contact vias in an integrated circuit. Referring to Figure 3 , a contact structure will be built on an underlying region 10 in an integrated circuit. The underlying region 10 can be either a semiconductor substrate or an underlying interconnect layer. Interconnect or component structures 12 , 14 are formed on the underlying region 10 . An insulating layer 16 is then deposited over the device. A planarizing layer 18 is deposited over the insulating layer 16 , followed by the deposition of a first buffer layer 20 . Finally, a second buffer layer 22 is deposited over the first buffer layer 20 . Together the four layers 16 , 18 , 20 , 22 form an interlevel dielectric layer. In one example of the preferred embodiment, the insulating layer 16 is made of undoped oxide, while the planarizing layer 18 comprises a phosphorus doped spin on glass containing approximately one to two percent phosphorus. The phosphorus doped spin on glass is annealed at approximately 400 to 500 degrees Celsius, and cured at approximately 700 degrees Celsius. An advantage to using the phosphorus doped spin on glass is that it creates a planarized surface at low to medium temperatures. The first buffer layer 20 is preferably made of phosphosilicate glass containing approximately one to four percent phosphorus, and the second buffer layer 22 preferably comprises phosphorus doped oxide containing approximately six to eight percent phosphorus. The first and second buffer layers 20, 22 can be deposited either by atmospheric or low pressure CVD. This results in the second buffer layer 22 having a faster etch rate than the first buffer layer 20 . Selection of the planarizing and buffer layers 18 , 20, 22 however, is not limited to these examples. Materials with different etch rates can be used so long as the second buffer layer 22 can be etched faster than the first buffer layer 20 . In order to avoid under cutting the contact, it is desirable that the first buffer layer 20 etch slower than the planarizing layer 18 . This allows formation of a contact opening having a "y" shaped profile, as will now be described. Figure 4 illustrates the device after a photoresist layer 24 is deposited and patterned on the second buffer layer 22 . The photoresist layer 24 is patterned and defined using methods known in the art. Referring to Figure 5 , an isotropic etch is performed to form an opening 26 through the first and second buffer layers 20, 22 . The isotropic etch may form opening 26 through the second buffer layer 22 and only a portion of the first buffer layer 20 . Because the second buffer layer 22 etches faster than the first buffer layer 20 , diagonally sloped sidewalls are created in the opening 26 . The diagonally sloped sidewalls help to reduce step coverage problems typically encountered with contact structures. Figure 6 illustrates the device after an anisotropic etch is performed to complete formation of the opening 26 , and the photoresist layer 24 is removed. It is possible to remove the second buffer layer 22 during a contact preclean step, as an alternative to having the second buffer layer 22 remain on the device as shown in Figure 6 . Referring to Figure 7 , a layer of conductive material 28 is deposited and patterned in the opening 26 , thereby making electrical contact with the underlying region 10 . The integrated circuit is now ready for further processing steps. The above described process provides a method for controlling the slope of the sidewalls in a contact structure. By selecting materials with varying etch rates, the slope of the vertical sidewalls in the contact structure can be controlled. Those skilled in the art will recognize that controlling the slope of the sidewalls helps in alleviating step coverage problems. This has the desirable effect of creating a planarized topography. Furthermore, the process is done at low to medium temperatures, a desirable feature for manufacturing processes requiring silicidation of refractory metals.

Claims: A method for forming a contact structure in an integrated circuit, comprising the steps of: forming an insulating layer (16) over an underlying region (10) in the integrated circuit; forming a first buffer layer (20) having a first etch rate over the insulating layer (16); forming a second buffer layer (22) having a second etch rate over the first buffer layer (20), wherein the second buffer layer (22) is removed faster than the first buffer layer (20) during an etch step; and forming an opening (26) through the second and first buffer layers (20,22) and the insulating layer (16) by performing a first etch followed by a second etch to expose a portion of the underlying region (10), characterised in that said first etch is an isotropic etch through the second and first buffer layers (20,22) and said second etch is an anisotropic etch through the insulating layer (16) so that the opening (26) has a "y" shaped profile. The method of claim 1, further comprising the step of forming a planarizing layer (18) having a third etch rate over the insulating layer (16) before forming the first buffer layer (20), wherein the first buffer layer (20) is removed slower than the planarizing layer (18) during an etch step, and wherein the opening (26) is formed through the planarizing layer (18) during the second etch. The method of claim 1 or claim 2, wherein said step of forming the insulating layer (16) comprises depositing a layer of undoped oxide over the underlying region (10) in the integrated circuit. The method of any foregoing claim, wherein said underlying region (10) comprises a semiconductor substrate. The method of any one of claims 2 to 4, wherein said step of forming the planarizing layer (18) comprises depositing a layer of spin on glass. The method of claim 5, wherein said spin on glass comprises a layer of phosphorus doped spin on glass. The method of any foregoing claim, wherein said step of forming the first buffer layer (20) comprises depositing a layer of phospho-silicate glass. The method of any foregoing claim, wherein said step of forming the second buffer layer (22) comprises depositing a layer of phosphorus doped oxide which is more highly doped than the first buffer layer (20). The method of any foregoing claim, further comprising the step of depositing and patterning a conductive layer (28) over a portion of the second buffer layer (22), wherein the conductive layer (28) extends into the opening (26) to make electrical contact with the underlying region (10). The method of any one of claims 1 to 8, further comprising the step of removing the second buffer layer (22) after forming the opening (26). The method of claim 10, further comprising the step of depositing and patterning a conductive layer (28) over a portion of the first buffer layer (20) , wherein the conductive layer (28) extends into the opening (26) to make electrical contact with the underlying region (10). The method of any foregoing claim wherein said first buffer layer has a first phosphorous doping level and said second buffer layer has a second phosphorous doping level higher than the first phosphorous doping level. The method of claim 12 wherein the first buffer layer has a phosphorous dopant concentration of between 1% and 4%. The method of claim 12 or 13 wherein the second buffer layer has a phosphorous dopant concentration between 6% and 8%. The method of any foregoing claim when dependent upon claim 6 wherein said spin on glass has a third phosphorous dopant concentration of between 1% and 2%. The method of any foregoing claim wherein said step of forming an opening (26) through the second and first buffer layers (20,22) and the insulating layer (16) by performing an isotropic etch through the second and first buffer layers (20,22) followed by an etch through the insulating layer (16) to expose a portion of the underlying region (10) comprises isotropically etching an opening through the second buffer layer and a portion of the first buffer layer and etching through the remaining portion of the first buffer layer and the insulating layer, to expose a portion of the underlying region. A contact structure in an integrated circuit, comprising: a conductive element; an insultiang layer comprising an undoped oxide layer (16) overlying the conductive element and a spin on glass layer (18) overlying the undoped oxide layer; a first buffer layer (20) overlying the insulating layer, such first buffer layer having a first phosphorous doping level; a second buffer layer (22) overlying the first buffer layer (20) , such second buffer layer having a second phosphorous doping level higher than the first phosphorous doping level; an opening (26) through the first and second buffer layers, the spin on glass layer, and the undoped oxide layer exposing a portion of the conductive element, wherein the opening has an upper portion having diagonally sloped sidewalls and a lower portion having substantially vertical sidewalls so that both portions form a y-shaped opening ; and a conductive layer (28) overlying portions of the second buffer layer and extending into the opening, wherein the conductive layer makes an electrical contact with the conductive element. The contact structure of claim 17, wherein the conductive element comprises a semiconductor substrate (10). The contact structure of any of claims 17 or 18, wherein the first buffer layer has a phosphorous dopant concentration of between 1% and 4%. The contact structure of any of claims 17 to 19, wherein the second buffer layer has a phosphorous dopant concentration of between 6% and 8%.

Inventors: CHIA WEI CHE, SHUNG LIN YIH, TAI LIOU FU, TSENG LU LUN, WALTERS JOHN LEONARD, CHIA WEI, CHE, SHUNG LIN, YIH, TAI LIOU, FU, TSENG LU, LUN, WALTERS, JOHN LEONARD
Applicants: SGS THOMSON MICROELECTRONICS, STMICROELECTRONICS, INC.
Application year: 1993
Main classification: H01L21
IPC codes: H01L23, H01L21