Method and apparatus for generating plasma, and semiconductor processing methods

Abstract: Plasma processing apparatus has a waveguide (19) along which microwaves are propagated from a microwave generator (1) to a plasma-forming region in a low-pressure processing chamber. The waveguide (19) has a large cross-sectional area, to enable a large region of plasma to be achieved. Uniformity and stability of the plasma are improved by a mode restrictor (20) which inhibits mixing of propagation modes which is otherwise liable to occur in a wide waveguide. The mode restrictor (20) consists of electrically-conductive dividers which divide the waveguide cross-section into an array of sub-guides before the plasma-forming region.

Description: This invention relates to methods and apparatus for generating plasma, and to applications of the generated plasma in the processing of substrates, particularly semiconductor substrates. The basic techniques of plasma generation using microwaves are well known. See e.g. "Semiconductor Plasma Processing Technique" (Sugano, published by Sangyo Tosho, page 139). Electric fields created by microwaves and an external magnetic field act together in a discharge tube to create a plasma which is used for treating e.g. semiconductor wafers. As semiconductor technology advances, the size of semiconductor wafers increases. To plasma-process such wafers, the propagating waveguide for the microwaves must also be enlarged, so that a larger area of plasma can be created. However, the increase in waveguide area brings with it certain problems, which reduce the quality and consistency of the plasma processing currently available with large-section waveguides. Japanese Patent 60530/1988 notes that the microwave energy tends to concentrate in the centre of the waveguide, so that plasma is not formed at the peripheral regions. To solve this problem, it is proposed to divide the waveguide into a number of equal sections extending side by side. Each of these sections would have its own central concentration of microwave power, so that power would be better distributed over the waveguide as a whole. Japanese Utility Model 67637/1990 is also concerned to enable plasma-forming towards the edge of a circular waveguide. The waveguide space is sub-divided by a concentric insert cylinder and radial walls extending outwardly from the cylinder. The cylinder is larger than the typical semiconductor specimen. The various sub-sections can be closed off, enabling microwave propagation to be selectively central and/or peripheral in the waveguide. These prior constructions achieve distribution of microwave energy over a wider area of the waveguide. But, the prior art still has serious problems of stability and uniformity of the plasma, particularly in a large-section waveguide. The present inventors have noted that to achieve a good plasma, it is not sufficient simply to distribute microwave energy across the waveguide section. Rather, we note that a more fundamental problem with the plasma is related to the propagation modes of the microwaves. Where a waveguide has a large cross-section in relation to the microwave wavelength, a large number of different modes can propagate. This problem is particularly serious with the new, large apparatus required for processing large substrates. We note that if many modes can propagate, the resulting plasma is unstable and lacks the uniformity needed for good processing. Accordingly, in this invention we aim to control and select the propagation modes of microwaves arriving at the plasma-forming region, so that a superior plasma can be achieved. In a first aspect, the invention provides plasma generating apparatus comprising a waveguide for guiding microwaves in a propagation direction from a microwave generator to a plasma-forming region, characterised by a mode restrictor in the waveguide to restrict the microwave propagation modes so that a single propagation mode contributes at least 80% of the microwave energy in the plasma-forming region. The mode restrictor may be made by subdividing the interior of the waveguide transversely to form a plurality of sub-guides extending side by side, and positioned so as to achieve the desired mode restriction effect. Appropriate positioning of the dividing walls for various modes can be determined by the skilled man on the basis of the principles explained herein, and routine calculations. In the preferred construction of the present invention, to select a predetermined plasma-forming mode for plasma forming, each sub-guide is so constructed as to propagate microwaves selectively (and desirably exclusively) with a respective sub-pattern of electric force lines which, when combined with the other sub-patterns, is aligned with an overall pattern of electric force lines of the desired plasma-forming mode of the open waveguide. It is important to note that the dividing walls used in the Japanese prior art documents mentioned above do not have any mode restricting effect. In JP-B-60530/1988 the sub-patterns which propagate in the divided waveguide are not aligned with any mode of the undivided waveguide so that substantial mixing of modes will result downstream of the subdivisions. In JP-UM/1-67637/1990 the central tube is too large to select aligned patterns. As mentioned, the mode restrictor favours a single mode over all others. In particular, the chosen mode contributes at least 80% and preferably at least 90% of the microwave energy after the mode restrictor. The preferred selected modes are simple modes, since these tend to produce the simplest and hence most useful plasma patterns. In particular, preferred plasma-forming modes are basic modes of the open waveguide, that is, modes of the type TE xy and TM xy where neither x nor y exceeds 1. The portion of the waveguide between the mode restrictor and the plasma-forming region is typically circular or rectangular in cross-section, and preferably circular since this corresponds to the symmetry of the typical substrate. In a circular waveguide, the most preferred plasma-forming mode is the TE 11 mode since this has a single area of high microwave intensity positioned centrally. Because the restriction of mode contributes to stability and uniformity of the plasma, it becomes possible to form plasma in very wide waveguides. In particular, the waveguide width at and following the mode restrictor may be 300 mm across or more, perhaps 400 mm across or more. The dividers used to subdivide the waveguide section are preferably in plate form, extending parallel to the microwave propagation direction. Preferably the microwaves propagating down the respective sub-guides formed by the dividers are phase-matched and this is assisted by making the length of the dividers, in the propagation direction, an integral multiple of one-quarter of the propagating wavelength of the microwaves. This is explained in more detail later. The actual disposition of the dividers may be done in a number of ways, depending on the mode which it is desired to "filter", the precision with which this needs to be done, the ease of making the dividers, and other practical considerations. In a preferred version, the plasma-forming mode is decided and dividers are shaped and positioned in the waveguide so as to extend perpendicularly to the pattern of electric force lines of that predetermined mode. By curving the dividers, a substantially accurate modelling of the mode can be achieved. Desirably the dividers are placed sufficiently closely to one another, and to the outer waveguide wall, that substantially only one mode propagates in each. In particular, the spacing of successive dividers in the direction along the electric force lines of the selected mode pattern is desirably less than the cut-off wavelength of any secondary (non-basic) microwave mode but desirably larger than the cut-off wavelength of a primary (basic) microwave mode in the sub-guide concerned. This prevents any higher order modes or reversal of force line patterns from developing in that direction. The waveguide may take various forms. The most simple form has a wide cross-section all the way along, but this is not preferred because of the immediate proliferation of modes at the location of the generator. It is preferred to use the conventional approach, having a first relatively narrow waveguide portion leading to a second relatively wide waveguide portion which leads to the plasma-forming region. A transitional portion, at which the cross-sectional area changes, may be a simple step but is desirably a gradually (non-perpendicularly) diverging portion since this is found to cause less mode mixing. The mode restrictor should be placed at the second portion i.e. in the second portion itself, or at the second end of the transitional portion. Preferably the waveguide cross-section remains substantially uniform after the mode restrictor. If it does not, a further mode restrictor may be used. Generally speaking, there should be a mode restrictor at or after any feature of the waveguide which is liable to cause mixing of modes. In another aspect, the invention provides plasma processing apparatus e.g. suitable for plasma processing semiconductor substrates, in which a processing chamber has a substrate-support platform in combination with a plasma generating system as described above, the platform being positioned so that substrates supported on it will be exposed to plasma formed at the plasma-forming region. Preferably the platform is rotatable. The processing chamber may be of the conventional type, that is, a sealed low-pressure chamber with means for introducing plasma-forming gas to the plasma-forming region. In a further aspect, the invention provides a plasma generating method using plasma generating apparatus as defined above. In particular, we provide a plasma generating method in which microwaves are propagated from a microwave generator along a waveguide to a plasma-forming region, with an enlargement of the waveguide tending to cause a mixing of propagation modes of the microwaves, and plasma is formed using the microwaves at the plasma-forming region, characterised by mode-filtering the microwaves in the enlarged waveguide to restrict the number of microwave propagation modes so that in the plasma-forming region a single mode contributes at least 80% of the microwave energy. The mode filtering or restricting effect can be achieved, as mentioned, by sub-dividing the microwave propagation through a plurality of sub-guides whose form is predetermined to achieve the desired mode restricting effect, and recombining the microwaves from the sub-guides to enter the plasma-forming region. In a further aspect, the invention provides methods of semiconductor plasma processing using apparatus and methods as described. In particular, the method may be applicable to semiconductor substrates - typically circular wafers - which are 200 mm or more across, and may be 300 mm or more across. In a specific method, the semiconductor substrate is positioned on a platform in a processing chamber, a plasma-forming gas is supplied into the processing chamber, a magnetic field is applied to a plasma-forming region in the processing chamber, to which the substrate is exposed, and microwaves are directed at the plasma-forming region to form plasma from mode-restricted microwaves which have been guided as described above. Concepts relating to the invention, and specific examples of the invention, are now described in detail with reference to the accompanying drawings in which: Figure 1 shows a prior art plasma processor in vertical section; Figure 2 shows in vertical section a plasma processor embodying the invention; Figure 3(a) and 3(b) illustrate the mixing of modes in a diverging waveguide; Figures 4 to 9 show respective embodiments of mode filters for use in embodiments of the invention, element (a) of each figure showing a mode pattern and element (b) showing an appropriate filter construction; Figure 10 is a perspective view, partly broken away, of a mode filter in a waveguide; Figure 11 is a transverse cross-section of the Fig. 10 mode filter; Figure 12 shows a TE 11 mode in the open waveguide; Figure 13 shows how the mode filter of Figs. 10 and 11 mimics the TE 11 mode; Figures 14 to 17 are transverse cross-sections through other embodiments of mode filter; Figures 18 and 19 show mode filter construction in a rectangular waveguide; Figure 20 shows two mode filters in series; Figure 21 is a perspective view of another example of mode filter; Figure 22 is a transverse cross-section of a further example of mode filter; Figure 23 is a vertical section of a second embodiment of plasma processing apparatus; Figure 24 is a vertical section of a third embodiment of plasma processing apparatus; Figure 25 is a vertical section of a fourth embodiment of plasma processing apparatus; Figure 26 is a vertical section of a fifth embodiment of plasma processing apparatus; Figure 27 is a perspective view of a mode-transfer guide construction, and Figure 28 is a perspective view of a further mode filter construction. Figure 1 shows a conventional plasma processing apparatus. A microwave generator 1', typically a magnetron generating microwaves at 2.45 GHz, is connected to a waveguide 19' leading to a processing chamber defined by a metal vessel 8' covered by a quartz dome or bell jar top 7' in which a rotatable platform 13' for supporting a semiconductor wafer 12' is provided. The processing chamber can be evacuated by suitable evacuating means 10'. Magnets 11' are positioned to apply a field to the region above the platform 13'. A process gas is introduced into the processing chamber from gas supply 9', while the evacuating means 10' maintain a suitable low pressure. Microwaves interact with the applied magnetic field above the specimen to create a gas plasma from the introduced gas. Ions in the plasma are attracted and directed onto the specimen surface by RF voltage applied between the platform 13' from RF generator 15' and an earth electrode 18'. The conventional waveguide has a narrow rectangular-section portion 2' extending from the generator 1', a converter section 3' which angles the waveguide for compactness and converts the rectangular section to a circular section, a narrow circular-section portion 4', a cross-section increasing portion 5' and a large-diameter uniform circular-cross section portion 6' leading down to the plasma-forming region above the specimen. Typically the initial rectangular portion 2' might be 109 x 55mm. In large state of the art constructions, the processing chamber may be 250mm or more in inner diameter at the plasma-forming stage. Figure 2 shows plasma processing apparatus embodying the invention. Parts corresponding to parts of the apparatus in Figure 1 are indicated by the same reference numbers, without prime. In this apparatus, the transitional portion 5 of the waveguide is not stepped but tapers outwardly. The low-pressure processing chamber is separated from the waveguide 19 by a flat quartz window 70, instead of a quartz dome. Most importantly, the waveguide has a mode filter 20 positioned across it in the large-diameter circular cross-section portion, just below the diverging transition 5 and just above the quartz window 70. The mode filter 20 controls and selects the microwave modes propagating in the waveguide towards the plasma-forming region above the platform 13. A number of suitable constructions of the mode filter 20 will be described below. First, some explanation of microwave mode mixing will be given. Microwave propagation modes and their patterns are well known in themselves. See for example "Microwave Engineering and Applications" by O. P. Gandhi, Pergamon Press. In a waveguide which is narrow in relation to the wavelength, only one or two simple modes can propagate. As the waveguide becomes wider in relation to the wavelength, more and more modes are capable of propagation. Table 1 illustrates this for a circular waveguide of diameter D, indicating for each mode the cutoff wavelength λ c and the waveguide diameter corresponding to microwave cutoff at 2.45 GHz frequency. In a 300 mm diameter waveguide, all seventeen of the listed modes can propagate. Mode λ c /D Diameter for cutoff (mm) (f = 2.45 GHz) TE11 1.705 71.8 TM01 1.307 93.7 TE21 1.029 119.0 TM11 0.820 149.3 TE01 0.820 149.3 TE31 0.748 163.7 TM21 0.612 200.1 TE41 0.591 207.2 TE12 0.589 207.9 TM02 0.569 215.2 TM31 0.492 248.9 TE51 0.490 249.9 TE22 0.468 261.7 TM12 0.448 273.3 TE02 0.448 273.3 TE61 0.418 292.9 TM41 0.414 295.8 Generally, the content of higher modes is less than that of lower modes. However the content of a mode also depends on the symmetry of the original exciting mode. In a typical plasma processing apparatus, microwaves are generated and first propagated in a narrow waveguide, commonly a rectangular waveguide, in which essentially only one mode (a TE 10 -type mode) can propagate. When the form of the waveguide changes to a larger section, the change causes microwave reflections and the mixing of modes, and these mixed modes will persist if the subsequent waveguide is wide enough. However microwaves can propagate with substantially a single mode in a wide waveguide, provided that the mixing of other modes is properly suppressed. Fig. 3 illustrates the divergent transition of a circular-section waveguide from narrow to wide cross-section, at a diverging angle . In the first waveguide portion 4 (Φ 90), only the basic circular mode TE 11 propagates. In the wide-section portion 6 (Φ 270), a number of modes can propagate. The non-uniformity caused by the transitional section 5 encourages the presence of mixed modes in the wide section 6. We plotted the energy contributions from various modes at the wide-section portion 6, according to the angle of the divergent portion 5. Fig 3(b) shows how as the angle  increased, the proportion of the exciting mode TE 11 gradually decreased at the output, with increasing contents of other modes, primarily TM 11 and TE 12 but also other modes not shown here. For a stepped transition ( = 90°) there were small contributions of comparable magnitude from the three different modes, no single mode predominating. The plot represents an ideal condition; in real apparatus there are disturbances and waveguide non-uniformities which further increase the contents of other modes. The mode filter or restrictor of the present apparatus is constructed to suppress the propagation of undesired modes in the wide-section waveguide so that only the desired mode - preferably a single basic mode - predominates in the (usually uniform) waveguide leading to the plasma-forming region. Figure 4 shows a particularly preferred construction. In a circular waveguide, the TE 11 mode is of particular use because the microwave intensity is concentrated into a regular patch at the centre of the waveguide. Fig. 4(a) shows the electric force line pattern of mode TE 11 . Figure 4(b) shows the mode filter 120, in which the waveguide cylinder is bisected by a flat dividing plate 121 with a pair of arcuate dividing plates 122,123 of increasing curvature disposed on either side. For at least most of its extent, each plate extends substantially perpendicularly to the electric force lines of the TE 11 mode. The distance between the plates is made sufficiently small in relation to the microwave wavelength that only a single simple mode propagates in each of the sub-guides formed by the division. It will be understood that only an electric field corresponding substantially to the TE 11 pattern can persist past this filter. Other field patterns, involving electric fields with components along the plates, cannot be sustained in the filter. With such a mode filter 120 installed in the large-diameter waveguide portion of the plasma processing apparatus, the microwaves propagating in that large-diameter portion are predominantly in the TE 11 mode and generate a stable plasma which has good properties for processing. If however the filter is placed in the small-diameter of the waveguide, bad results are obtained because the subsequent divergence of the waveguide causes mixing of modes. While TE 11 is a preferred mode, the stability obtained by "fixing" the propagation mode is also of value with other modes, particularly simple modes. Fig. 5(a) shows the electric force line pattern of the TM 01 mode and, in Fig. 5(b), a dividing wall construction which can propagate that mode selectively, namely a plurality of concentric metal cylinders 221,222. These cylinders are spaced sufficiently closely, in relation to the microwave propagation wavelength therein, that essentially only one mode can propagate down the sub-guide spaces between them. Correspondingly, Figs. 6(a) and (b) show respectively the electric force line pattern for the circular TE 01 mode and a filter construction 320, with a plurality of flat radially-extending equi-angled plates 321, which selectively propagates a force line pattern aligned with that mode. Figs. 7(a) and (b) show respectively the electric force line pattern of the TE 21 circular mode and a dividing wall disposition which promotes it while suppressing others, namely subdivision into four equal segments by two perpendicular crossing walls 421, each segment being further divided by an inwardly convex arcuate plate 422. Figs. 8(a) and (b) show respectively the electric force line pattern for the circular TM 11 mode and an appropriate mode filter construction 520. This has a single flat bisecting wall 521 and an elliptical-section tube 522 in each of the two resulting spaces. Figs. 9(a) and (b) show respectively the electric force line pattern of the circular TE 12 mode and a suitable filter construction 620. This has a central concentric tube 621 with six radial walls 622 extending from the central tube 621 to the outer wall. In each of the above constructions, the dividing walls and of course the outer walls need to be of material suitable for a waveguide, that is, material in which at least the surface is electrically conductive, or behaves electrically conductively with microwaves. In practice metal plates are suitable, and aluminum plates particularly preferred. As for thickness, excessive thickness tends to cause microwave reflection at the beginning and end of the filter. Conversely, if the walls are too thin their shape tends to be unstable, their resistance higher and a heating problem arises. In practice, 3 to 0.5mm is a preferred range of thickness. It should be understood that the actual constructions illustrated are not the only constructions which are selective of the stated modes. In particular, the number of dividing walls may need to be varied according to the area of the waveguide in relation to the operational microwave frequency/wavelength to be used. For some modes, the necessity to maintain exact perpendicularity with the theoretical force line patterns over the cross-section will be more exacting than others. The theory of microwave propagation is well-established, and a skilled person will be able to determine any necessary changes by routine calculations, on the basis of the criteria stated herein. The conventional microwave frequency used in such apparatus is 2.45 GHz, being the frequency of most commercially available microwave magnetrons. However in practice microwaves of any suitable frequency may be used, typically in a frequency range of 1.3 to 10 GHz. The way in which the modes are filtered may also take account of the exciting mode, i.e. the propagation mode in the first portion of waveguide leading from the microwave generator to the filter. It was explained earlier that when TE 11 mode was supplied, TM 11 and TE 12 modes are the primary mixing modes at the output. If the microwaves are excited in a TE 01 mode, one of the fundamental modes, the primary mixing modes will be TE 21 and TM 21 modes. In that case, the mode restrictor may be designed with a specific view to suppressing those modes. For most effective operation, the design should take into account the phase of microwaves propagating in each of the sub-guides. If the phases are matched for the array of sub-guides, microwave reflections and mixing of modes can be minimised. To match the phases, the phase speeds (wave propagation speeds) of the microwave modes travelling in each sub-guide must be matched. That is, the actual in-guide wavelengths for the various sub-guides must be the same. This concept of in-guide wavelength is explained further with reference to Fig. 10. The microwaves have a fixed operational frequency, with a wavelength λ for travel in a vacuum. In a given waveguide, the in-guide wavelength λ g depends on the shape and size of the waveguide and the mode which is propagating, as follows: 1/λ g 2 + 1/λ c 2 = 1/λ 2 where λ c is a cutoff wavelength which can be calculated on the basis of the guide shape and size and the microwave mode. Consider for example the central concentric tube 723 of the mode filter shown in Fig. 10. For 2.45 GHz microwaves, λ = 122.4 mm. The dividing tube 723 has a diameter D b . The TE 11 mode travelling through it has a cutoff wavelength λ c = 1.71D b . The in-guide wavelength λ b' of the TE 11 mode travelling in this guide B can then be determined. Equally, for the sub-guide segments the "fan" shape approximates a rectangle. The main waveguide 721 diameter is D a . The cutoff wavelength λ c of the rectangular mode TE 10 passing through such a guide space is λ c = π(D a + D b )/n, where n is the number of segments, six in the case of Fig. 10. Again, the in-guide wavelength λ c' for the TE 10 mode in each sub-space is determined. The dimensions can then be adjusted so that these in-guide wavelengths are set equal to one another. The overall length of the filter is also significant. It is almost impossible to get perfect matching between the microwave mode patterns in and adjacent the mode filter. When they are not perfectly aligned, some degree of microwave reflection occurs. To minimise this, the length L of the mode filter section is preferably set to an integral multiple of 1/4 of the in-guide wavelength λ' of the propagating mode. That is, L = h λ'/4, where h is a positive integer and it is assumed that all the in-guide wavelengths have been made equal. It is still more preferable if L = (2h + 1) λ'/4. The mode filter construction of Fig. 10 is described in more detail with reference to Figs. 11, 12 and 13. It represents a different approach from the embodiments of Figs. 4 to 9. In this approach, the waveguide interior is subdivided into sub-guide spaces including quasi-rectangular spaces which "mimic" portions of a mode of the undivided waveguide interior. The Fig. 10 and 11 embodiment has a central cylindrical divider 723 and six equi-spaced radial dividing walls 722 extending to the outer wall 721. The interior is thus divided into seven unit guide spaces a to g, in each of which two arbitrarily selected points can be connected by a curve contained in that space. The size of the unit guide spaces a to g is made sufficiently small to limit the microwave modes that can propagate in each. Fig. 12 shows the electric force line pattern of the circular TE 11 mode of an open circular waveguide, which is a major component propagating to the mode filter and which it is desired to select as the component propagating from the mode filter to the plasma-forming region. Fig. 13 shows the electric force lines of the restricted modes that can propagate through the sub-spaces of the sub-divided waveguide at the mode filter. The inner tube 723 is so small that, unlike the outer tube 721, no mode higher than TE 11 can propagate in it. The "sub-pattern" of this TE 11 sub-mode, excited by the incoming corresponding mode, is shown in the centre of Fig. 13. Conversely, each of the outer segment spaces b to g behaves like a rectangular guide, sufficiently small that only the rectangular TE 10 -type of mode can propagate. The electric force sub-patterns of these TE 10 -type modes are indicated around the periphery of Fig. 13. It can be seen that, in combination, the electric force line patterns which are selectively propagated by the various sub-spaces can provide an approximation of the overall electric force line pattern of the main-guide TE 11 mode seen in Fig. 12. Conversely they are wholly inconsistent with other simple modes of the main guide. Consequently this mode filter construction tends to promote propagation of the TE 11 mode in the main waveguide after the filter. Even if microwaves arriving at the filter are in a mixture of modes, the small size of the sub-guides in the filter compels propagation in only the simple modes shown, which then lead to the TE 11 mode predominating subsequently. In other words, the construction works as a mode pass filter for the TE 11 mode. Figures 14 to 17 show other possible constructions. In Fig. 14, the central tubular conductor 823 is polygonal, with a radial wall 822 extending from each vertex of the polygon - here a hexagon - to the outer wall 821. In Figs. 15 and 16, two concentric tubular dividers 924,925 are positioned inside the main waveguide 921. This may be necessary in very large-diameter waveguides in which higher modes might be able to propagate in the outer segments of a simple structure such as shown in Figs. 11 or 14. In Fig. 15 the inner and outer radial wall sections 922,923 are aligned. In the Fig. 16 construction the inner and outer radial wall sections 1022,1023 are staggered relative to one another. Fig. 17 shows a plurality of tubular sub-guides 1125 arranged on a circle, connected to one another by circumferential wall sections 1124 and to the outer wall 1121 by radial wall sections 1123. This structure is suitable for propagating a mode with single rotational symmetry. The mode filters described have all been in the context of a circular waveguide. However the same concept can be applied in waveguides of other cross-sectional shape e.g. oval or polygonal. In some of these, microwave modes correspond to those of a circular waveguide. The concept may also be applied to a rectangular guide. Figs. 18 and 19 show mode filtering constructions within a rectangular section waveguide. The Fig. 18 construction divides the rectangular guide 30 into three equally-sized sub-guides using two flat dividing walls 32. The Fig. 19 construction 130 positions a rectangular-section tube 132 concentrically inside the main tube 131, with flat walls 133 linking the corresponding vertices of the two tubes. Figure 20 shows how a plurality of mode restrictors may be positioned in series. Two restrictors 201,202 are shown, of different construction and having different lengths L 1 , L 2 in the propagation direction. With such arrangements it is possible to select and control microwave modes more effectively. Account may also be taken of more than one change in the waveguide cross-section. It should also be noted that useful effects may be achieved by adjusting the distance between the mode filter and the plasma-forming region, to optimise the stability and uniformity of the plasma. The microwave filter may therefore be made movable in the waveguide in the propagation direction sense, and/or within its own level. Figs. 21 and 22 show a further embodiment of mode filter, similar in general principle to that of Fig. 4 and intended to pass the TE 11 mode. The outer metal cylinder 1220, of length L and inner diameter 2R, is divided into two halves by a flat partition plate 1223, and each half is subdivided by an arc-shaped partition plate 1224 whose centre is at a distance d 1 from the cylinder centre. In the construction, 0.4 ≤ d 1 /R ≤ 0.6 This is found to reduce the transmission factor of modes other than TE 11 . The central partition plate 1223 furthermore has slits 1225 at positions spaced by a distance d 2 from the cylinder centre. We have found that such slits can enhance the mode selectivity. In the construction, 0.3 ≤ d 2 /R ≤ 0.4. In this embodiment, the slits 1225 are arranged in two spaced pairs. The width t 1 of each slit is desirably related to the thickness t 0 of the plate 1223 as follows: t 1 /t 0 ≤ 2 and the spacing t 2 between the slits in each pair may be approximately equal to the width of the slits. The embodiment shown in Fig. 22 has the same flat central divider 1323, but the convex dividers 1324,1325 are trapezoidal instead of curved. These trapezoidal partitions may be made by bending plates, or connecting three flat plates. The embodiment shown has four of the trapezoidal plates. They are set with the distances d 3 from the middle plate 1323 to the inner plates 1324, and the distance d 4 from the middle plate 1323 to the outer plates 1325, meeting the relationship 0.35 ≤ d 3 /R ≤ d 4 /R ≤ 0.65 If more than four partition plates are used, a similar effect can be obtained provided that four of them meet the requirements stated above. Figures 23 to 26 illustrate some possible variations in the construction of the processing apparatus and the disposition of mode selecting means within the apparatus. The apparatus of Fig. 23 is similar to that of Fig. 2 except that the transition from the narrow-section to the wide-section waveguide is made at a perpendicular step 105. As mentioned previously, such a step does tend to cause mode mixing. However the effect of this can be largely obviated by the mode filter 20 positioned below the transition. Figure 24 shows a construction in which the quartz cover 207 of the processing chamber is a dome, as in the prior art construction of Fig. 1. This is simple to make, but less preferred than the flat-window construction from the point of view of plasma uniformity. The mode filter 20 is spaced above the dome-shaped cover 207. Figure 25 shows a construction in which, as in Fig. 2, the waveguide 19 has a tapering transition 305 from narrow to wide cross-section. However in this embodiment the taper continues until the waveguide meets the flat sealed cover window 307 of the processing chamber, and the mode filter 20 is constructed within the wide end of the taper. This enables the overall length of the waveguide and hence the equipment size to be reduced. Fig. 26 shows an in-line construction in which the microwave generator 401 is directly above the processing chamber and connected thereto by a straight waveguide having a rectangular-section portion 402, a rectangular-circular conversion section 403 and a gently diverging portion 405 whose widest end secures against the quartz cover plate 407 of the processing chamber. The construction has two mode filters, a first mode filter 20a installed in the largest-diameter portion of the diverging waveguide 405 and a second mode filter 20b installed inside the processing chamber. The metal vessel of the processing chamber has its inner wall surface, which forms a discharge element, covered with an insulating material 404 to prevent diffusion of impurities towards the specimen being processed. Typical diameters for the locations of the mode filters 20a,20b are e.g. 250mm and 300mm respectively. The mode filters themselves may be e.g. as described in Fig. 21 or Fig. 22, or according to any of the other constructions described herein, particularly those which select TE 11 mode. Since mode filters are provided before and after the entrance to the processing chamber, mode stability and hence plasma stability are good. In the embodiments of Figs. 2 to 26, the microwave output from the magnetron is guided through the rectangular waveguide and the circular/rectangular waveguide to the circular waveguide in order to facilitate propagation of the TE 11 mode in the large diameter circular waveguide. However, the present concept is not limited to this feature. For example, as shown in Fig. 27, a mode-transfer-waveguide 501 comprising a tapered guide having a rectangular inlet and a rectangular outlet which is displaced 90 degrees from the inlet, and whose long side is about twice the long side of the inlet rectangle, may be used in lieu of the circular/rectangular waveguide. The mode-transfer-waveguide 501 tends to convert microwaves of TE 10 mode in the initial rectangular waveguide into microwaves of TE 20 mode in the subsequent rectangular waveguide, to favour the propagation of microwaves of TE 01 mode in the subsequent circular waveguide. In this case it is possible to provide in a circular waveguide 502 a mode filter 503 having metal plates in a radiating arrangement, as shown in Fig. 28, to reduce propagation other than in TE 01 mode. Accordingly, since a high density portion of the plasma is equalized within an enlarged area, a sample of large diameter disposed in that enlarged area can be relatively uniformly processed.

Claims: Plasma generating apparatus comprising a waveguide (19) for guiding microwaves in a propagation direction from a microwave generator (1) to a plasma-forming region, characterised by a mode restrictor (20) in the waveguide (19) to restrict the microwave propagation modes such that in the plasma-forming region, a single propagation mode contributes at least 80% of the microwave energy. Plasma generating apparatus according to claim 1 in which the mode restrictor (20) comprises dividers which have electrically-conductive surfaces and divide the interior of the waveguide (19) transversely to the propagation direction into a plurality of sub-guides extending side by side. Plasma generating apparatus according to claim 2, in which the dividers are in plate form. Plasma generating apparatus according to claim 3 in which the length of the dividers in the propagation direction is an integral multiple of one-quarter of the propagating wavelength of the microwaves. Plasma generating apparatus according to any one of claims 2 to 4 in which, to select a predetermined plasma-forming mode for the plasma-forming region, each sub-guide propagates the microwaves selectively with a respective sub-pattern of electric force lines, and the combined sub-patterns are aligned with a pattern of electric force lines of the predetermined plasma-forming mode in the waveguide. Plasma generating apparatus according to claim 5 in which the predetermined plasma-forming mode is a basic mode of the waveguide. Plasma generating apparatus according to claim 6 in which the predetermined plasma-forming mode is the circular TE 11 mode. Plasma generating apparatus according to any one of claims 5 to 7 in which, in the cross-section of the waveguide (19), each divider extends perpendicularly to the pattern of electric force lines of the predetermined plasma-forming mode. Plasma generating apparatus according to any one of claims 5 to 8 in which the spacing of successive dividers in the direction along the electric force lines of said pattern is less than the cut-off wavelength of a secondary microwave mode and larger than the cut-off wavelength of a basic microwave propagation mode in the respective sub-guide. Plasma generating apparatus according to any one of the preceding claims in which a second portion (6) of the waveguide, leading to the plasma-forming region, has a larger cross-section than a first portion (2) of the waveguide leading from the microwave generator (1), a transitional portion (5) connects between the first and second portions, and the mode restrictor (20) is at the second portion (6) of the waveguide (19). Plasma generating apparatus according to claim 10 in which the transitional portion (5) of the waveguide (19) diverges obliquely from the propagation direction. Plasma generating apparatus according to claim 10 or claim 11 in which the first portion (2) of the waveguide has a rectangular cross-section and the second portion (6) of the waveguide has a circular cross-section. Plasma generating apparatus according to any one of the preceding claims, in which the waveguide (19) is at least 300mm across at the entry to the plasma-forming region. A plasma processing apparatus comprising plasma generating apparatus in accordance with any one of claims 1 to 13, and a substrate-support platform (13) in a processing chamber positioned such that a substrate (12) supported thereon is exposed to plasma formed at the plasma-forming region. A plasma generating method in which microwaves are propagated from a microwave generator (1) along a waveguide (19) to a plasma-forming region, through an enlargement (5) of the waveguide (19) tending to cause a mixing of propagation modes of the microwaves, and plasma is formed using the microwaves at the plasma-forming region, characterised by mode-filtering the microwaves in the enlarged waveguide (5,6) to restrict the number of microwave propagation modes so that in the plasma-forming region a single mode contributes at least 80% of the microwave energy. A method according to claim 15 in which the microwaves are mode-filtered by sub-dividing their propagation through a plurality of sub-guides extending side by side within the enlarged waveguide (5,6), and recombining the microwaves from the sub-guides to enter the plasma-forming region, and in which in each sub-guide, microwaves propagate in substantially a single mode. A method according to claim 15 or claim 16 in which the plasma-forming region is at least 300mm across. A method according to any one of claims 15 to 17 in which the single propagation mode is the circular TE 11 mode. A method of plasma processing a semiconductor substrate (12) at least 200mm across, comprising positioning the semiconductor substrate (12) on a platform (13) in a processing chamber, supplying a plasma-forming gas into the processing chamber, applying a magnetic field to a plasma-forming region in the processing chamber to which the semiconductor substrate is exposed, and directing microwaves at the plasma-forming region to form plasma thereat in accordance with any one of claims 16 to 18.

Inventors: ENAMI HIROMICHI, KAJI TETSUNORI, KAKEHI YUTAKA, KAWASAKI YOSHINAO, NOJIRI KAZUO, OGAWA YOSHIFUMI, SUZUKI KEIZO, WATANABE SEIICHI, ENAMI, HIROMICHI, KAJI, TETSUNORI, KAKEHI, YUTAKA, KAWASAKI, YOSHINAO, NOJIRI, KAZUO, OGAWA, YOSHIFUMI, SUZUKI, KEIZO, WATANABE, SEIICHI
Applicants: HITACHI LTD, HITACHI, LTD.
Application year: 1993
Main classification: C23C16
IPC codes: C23C16, H01J37