Manufacture of alignment marks for holographic lithography

Abstract: A method for forming alignment marks and a total internal reflection hologram in a holographic recording layer (14) for a lithographic process such that the alignment marks are readily detectable by an alignment system, including defining alignment marks (10) in a mask (11), said mask also defining the pattern (12) to be reconstructed from said TIR hologram, locating said holographic recording layer and said mask in a TIR hologram recording system, forming a TIR hologram of the mask pattern in the holographic recording layer and transferring the alignment marks in the mask into the holographic recording layer by illuminating the mask with an object beam (18); wherein the features of the alignment marks in the mask are of sufficient size that the alignment marks recorded in the holographic recording layer are well-defined regions of different refractive index and/or layer thickness.

Description: The present invention relates to the field of microlithography as employed for the manufacture of microelectronics and other types of device comprising high resolution features. In particular it relates to layer-to-layer registration in a microlithographic system based on total internal reflection holography. Microdevices such as integrated circuits are commonly multi-level structures, each layer containing a pattern of high resolution features in a particular material. In order for the microdevice to perform correctly it is essential that the features in the different layers be very accurately registered, or aligned, with respect to each other. To quantify this, the accuracy of alignment between layers typically needs to be to one quarter of the dimension of the smallest features; so, if the smallest features are of dimension 2µm, the layers must be aligned with an accuracy of 0.5µm. Conventional lithographic systems for manufacturing microdevices, such as contact printers, proximity printers and optical steppers, function by optically transferring a pattern of features defined in a mask into a layer of photosensitive material on a substrate surface. Post-lithographic processing then transfers the pattern from the photosensitive layer into a material with the appropriate electrical, electro-optic, or whatever, properties. This sequence is repeated a number of times with a variety post-lithographic treatments to construct the complete structure of the microdevice. The alignment systems in conventional lithographic equipment rely on reference marks included in the mask alongside the circuit pattern and corresponding marks printed on the substrate surface alongside the circuit features. The alignment system measures the relative positions of the marks on the mask with respect to the marks on the wafer by, for instance, laser-beam scanning, where the marks are scanned and the scattered light detected, or by imaging the marks, where the image either falls onto a detector array or is viewed as a virtual image through a microscope. Following measurement the wafer or mask is appropriately translated and/or rotated to its aligned position, whereupon printing takes place. These methods however require that the alignment marks in the mask and on the wafer are clearly defined features and furthermore that the marks are accurately registered with respect to the circuit patterns on the respective surfaces. With respect to the latter, by fabricating the marks in the mask using the same process as for the circuit pattern, they are necessarily accurately registered with respect to the mask circuit pattern. Similarly, by including the wafer marks in a mask alongside the circuit features and transferring the marks and circuit pattern to the wafer using the same process, the marks on the wafer are accurately registered with respect to the wafer circuit pattern. Concerning the definition and visibility of the mask marks, since photomasks are in the form of spaces in an opaque layer, or its negative, the alignment marks included therein are readily detectable by an alignment system and so afford good measurement accuracy. A microlithographic technique that is attracting increasing interest is based on total internal reflection holography (see US 4857425). Total internal reflection (TIR) holography has been demonstrated to be powerful technique for sub-micron lithography (see References 1-2 ) . The main principles of TIR hologram recording are illustrated in Figure 1 . A holographic plate 1 comprising a holographic recording layer 2 on a substrate 3 is put in optical contact with a surface of a large prism 4 . An object in the form of a mask transparency 5 lies in proximity to the recording layer 2 . Two mutually coherent beams illuminate the system. One, the object beam 6 , passes through the mask transparency 5 to the recording layer 2 and the other, the reference beam 7 , is directed through another face of the prism 4 so that it is totally internally reflected from the surface of the holographic layer 2 . The optical interference of the two beams 6 and 7 is recorded by the photosensitive material in the layer 2 to produce a TIR hologram. After fixing, the hologram substrate 3 is placed back in optical contact with the prism 4 but rotated through 180°. Illumination by the reference beam 7 , which is now the conjugate beam of the reference beam during recording, generates an accurate reproduction of the pattern contained in the original mask 5 , and this image can be used to perform lithography. With the prism and hologram in the configuration depicted in Fig. 1 , an imaging or scanning alignment system in a TIR holographic lithographic system would preferably interrogate the hologram and wafer surfaces via the vertical face of the prism. For TIR holographic lithography, as for conventional lithography, the formation of well-defined and accurately registered alignment marks on the wafer surface is straightforward : these marks can be included in a photomask alongside the circuit pattern, all of which is then recorded and printed using the TIR holographic process. The formation of well-defined and detectable alignment marks in the hologram however is another matter. Whereas the features in a photomask are spaces in an opaque layer, or its negative, a TIR hologram is a complex modulation of refractive index including a very high spatial frequency component (~3000 lines/mm). Therefore any alignment marks present in a photomask will be transformed by the TIR hologram recording process into structures that are, to all intents and purposes, invisible to an imaging or scanning alignment system. JP-A-59 060 462 discloses a method for forming a high reliability hologram disk device in which marks for aligning the center position of a revolving shaft with respect to a specified position of a hologram pattern are formed in a photosensitive layer. The alignment marks are formed by illuminating marks in two separate photomasks and imaging the projected light through lenses onto the photosensitive layer. After formation of the alignment marks, a hologram is formed by illuminating a pattern in a further separate mask with two laser beams. JP-A-02 192 114 discloses a method for aligning a reticle and a wafer in highly precise manner by means of two holograms which are formed on the reticle. In order to regenerate images of the holograms in the mask a lens is required between the mask and the wafer. The light which is projected from the wafer at an angle α w is detected for aligning the reticle and the wafer in a highly precise manner. It is therefore an object of the present invention to provide a method for forming alignment marks in a holographic recording layer such that the marks can be accurately located with respect to an image to be reconstructed from a TIR hologram recorded in the layer and such that the marks have sufficient definition and contrast that they can be readily detected by an imaging or scanning alignment system. According to a first aspect of the invention there is provided a method for forming alignment marks detectable by an alignment system, and a total internal reflection hologram in a holographic recording layer for a lithographic process, which method includes: a) providing alignment marks (10) in a mask (11), said mask defining also the pattern (12) to be reconstructed from said total internal reflection hologram; b) providing a total internal reflection hologram recording system; c) locating said holographic recording layer (14) and said mask (11) in the total internal reflection hologram recording system; d) forming a total internal reflection hologram of the pattern in the mask by illuminating the mask with a first object beam (18) and the holographic recording layer (14) with a reference beam (19); and e) transferring the alignment marks (10) in the mask (11) to the holographic recording layer (14) by illuminating the mask (11) with the first object beam (18) or with a second object beam derived from a second light source; wherein the features of the alignment marks (10) in the mask (11) are of sufficient size with regard to the wavelength of the illuminating object beam (18) and the separation of the mask (11) and recording layer (14) that the alignment marks (10) formed in the holographic recording layer (14) are well-defined regions of constant but different refractive index and/or substantially constant but different layer thickness of exposed and unexposed regions so that light reflected and scattered from either side of a boundary will combine to produce a detectable feature. By this method the alignment marks are recorded in the holographic layer as regions of substantially constant but different refractive index and/or layer thickness. Whereas a change in refractive index and/or a change in layer thickness are not by themselves visible to an imaging or scanning alignment system, a boundary between exposed and unexposed regions can be. If the boundaries between the regions possessing different refractive indices and/or thicknesses are sufficiently sharp and the illumination of the marks by the alignment system has sufficient spatial coherence across the boundaries, then the light reflected and scattered from either side of a boundary will combine to produce a detectable feature. The sharpness of the boundaries formed in the recording layer, which also determines the accuracy of the alignment measurement, depends on the sharpness of the 'mark shadow' in the object beam transmitted by the mask. In order that diffraction does not unacceptably degrade edge definition, the features of the mark must be of sufficient size with regard to the wavelength of the illuminating object beam and to the separation of mask and recording layer. So that the alignment marks recorded in the holographic layer are accurately registered with respect to the pattern in the mask, and therefore with respect to the image of the pattern to be reconstructed from the TIR hologram, it is necessary that the object beam transferring the marks illuminates the mask at an accurately determined angle, preferably normal incidence; otherwise there will be an arbitrary lateral displacement of the recorded alignment mark with respect to the mask pattern. If the beam performing mark transfer is at an arbitrary angle, it will produce an error in the alignment measurement, although this, in principle, could be compensated for by the lithographic system. The present invention will now be described in greater detail by way of example with reference to the following drawings, wherein : Figure 1 , already described, illustrates the main principles of total internal reflection holography. Figure 2 illustrates an alignment mark. Figure 3 shows the locations of alignment marks on a mask. Figure 4 schematically shows an apparatus for forming alignment marks and a TIR hologram in a holographic recording layer. A typical form of an alignment mark for inclusion in a holographic recording layer is shown in Fig. 2 . The mark is a chevron comprising two orthogonal arms 8 of length 300µm joined at an apex 9 . The size of the chevron is such that a mechanical prealignment of the wafer with respect to the hologram produces an approximate overlapping of the hologram and wafer marks. Such a shape of mark and corresponding mark on the wafer surface can be readily interpreted by an imaging alignment system to provide measurement of the relative positions of the marks. The width of the chevron arms 8 will be discussed later. Two such alignment marks 10 are introduced (see Fig. 3 ) into a photomask 11 at opposite sides of a circuit pattern 12 . The alignment marks 10 and circuit pattern 12 in the photomask 11 constitute a clear spaces in a layer of chrome on a fused silica substrate. It may be manufactured using electron-beam lithography and procured from a commercial mask shop. Two alignment marks are employed in order that angular as well as translational alignment can be accurately obtained. Referring now to Fig. 4 , a holographic plate 13 , comprising a 15µm layer 14 of a holographic recording material spun onto a glass substrate 15 , is index-matched to a surface of a 45°, 45°, 90° prism 16 in a TIR hologram recording system. A suitable holographic recording material would be that identified as HRS-352 and manufactured by the company Dupont de Nemours. This material contains a monomer that polymerises on exposure to light and does not require a wet development process. The mask 11 is introduced into the system and positioned using piezo-electric transducers 17 so that it lies parallel to the recording layer 14 with a gap of 100µm between it and the layer surface. Gap measurement is best achieved interferometrically by illuminating the gap with laser beams introduced via the vertical face of the prism 16 and analysing the interference of the light reflected from the surfaces of the holographic layer 14 and mask 11 . The technique described in EP-A-02421645 is particularly suitable. The laser beams need to be of a wavelength at which the holographic recording material is not sensitive. The apparatus for doing this is not shown in Fig. 3 since it is not intrinsic to the invention and could be readily formulated by someone knowledgeable in the art. The 100µm gap and parallelism could alternatively be achieved by resting the mask 11 on 100µm thick spacers laid on the surface of the recording layer 14 . The hologram-forming beams 18 and 19 are derived from an argon ion laser 20 operating at a wavelength of 363.8nm. The output of the laser 20 is divided by a beam splitter 21 into an object beam 18 and a reference beam 19 . The object beam 18 is reflected from a couple of mirrors 22 and passes through a beam expander 23 to illuminate the mask 11 at normal incidence. The reference beam 19 passes through another beam expander 24 , is reflected by a mirror 25 and enters the hypotenuse face of the prism 16 to illuminate the holographic recording layer 14 at 45°, an angle at which the beam 19 is totally internally reflected from the layer surface. The alignment marks 10 in the mask 11 are transferred to the holographic layer 14 as follows. First, with the shutter 26 closed, the circuit pattern 12 in the mask 11 is covered by an opaque plate 27 and a beamblock 28 is introduced into the optical path of the reference beam 19 . The shutter 26 is then opened, thereby exposing the marks 10 in the mask 11 to the object beam 18 . In this process the light transmitted by the alignment marks 10 polymerises the recording layer 14 , changing its refractive index and causing a localised shrinkage of the layer 14 . In order that diffraction of the light transmitted by the marks 10 does not unacceptably degrade the definition of the recorded marks, the arms 8 of the chevron features must be sufficiently wide. For an exposure wavelength of 363.8nm and a gap of 100µm between the mask 11 and the recording layer 14 , a suitable width for the arms 8 would be 6µm. After sufficient exposure for forming high-contrast marks, the timing mechanism 29 closes the shutter 26 . It is not essential that the beam 18 performing mark transfer be derived from the same laser 20 as used for hologram formation. It may instead be derived from, for instance, a mercury lamp. In this case an additional set of optics would be required in the recording system to direct the light from the second source onto the marks 10 in the mask 11 . Following recording of the alignment marks, recording of the TIR hologram proceeds. First the opaque plate 27 and the beamblock 28 are removed from the system. To prevent contamination of the recorded alignment marks by the TIR exposure the recorded marks may be shielded from the TIR exposure by appropriately blocking parts of the object and reference beams 18 and 19 (this precaution is not essential). The shutter 26 is then opened so that the object beam 18 illuminates the mask 11 and the reference beam 19 illuminates the holographic layer 14 , forming a TIR hologram in the normal way. An equally valid procedure would be to reverse the exposure sequence, that is, to record the TIR hologram before transferring the alignment marks 10 . In this case, however, for the TIR hologram recording, those parts of the recording layer 14 to receive the alignment marks should be shielded from the illuminating beams 18 and 19 , otherwise the TIR hologram exposure will deplete the photosensitive material in those parts of the layer 14 preventing formation of high-contrast alignment marks. A further possible procedure is to record the alignment marks simultaneously with the TIR hologram. In this case those part of the recording layer 14 to receive the alignment marks have to be shielded from the reference beam 19 in order for the recorded alignment marks to have reasonable contrast. Following recording of the TIR hologram and alignment marks, the recording layer 14 is then fixed by exposing it to incoherent ultraviolet radiation. The holographic plate 13 is then ready to be employed in a TIR holographic lithographic system. References 1. R.Dändliker, J.Brook, "Holographic Photolithography for Submicron VLSI Structures", IEEE Conf. Proc.Holographic Systems, Components and Applications, Bath, U.K., p.311 (1989). 2. S.Gray, M.Hamidi, "Holographic Microlithography for Flat Panel Displays", SID 91 Digest pp.854-857 (1991).

Claims: A method for forming alignment marks (10) detectable by an alignment system and a total internal reflection hologram in a holographic recording layer for a lithographic process, which method includes: a) providing alignment marks (10) in a mask (11), said mask defining also the pattern (12) to be reconstructed from said total internal reflection hologram; b) providing a total internal reflection hologram recording system; c) locating said holographic recording layer (14) and said mask (11) in the total internal reflection hologram recording system; d) forming a total internal reflection hologram of the pattern in the mask by illuminating the mask with a first object beam (18) and the holographic recording layer (14) with a reference beam (19); and e) transferring the alignment marks (10) in the mask (11) to the holographic recording layer (14) characterized in that the marks (10) are transferred to the holographic recording layer (14) by illuminating the mask (11) with the first object beam (18) or with a second object beam derived from a second light source; wherein the features of the alignment marks (10) in the mask (11) are of sufficient size with regard to the wavelength of the illuminating object beam (18) and the separation of the mask (11) and recording layer (14) that the alignment marks (10) formed in the holographic recording layer (14) are well-defined regions of constant but different refractive index and/or substantially constant but different layer thickness of exposed and unexposed regions so that light reflected and scattered from either side of a boundary will combine to produce a detectable feature. A method according to claim 1 wherein step e) precedes step d) A method according to claim 1 wherein step e) procedes simultaneously with step d). A method according to claim 1 wherein the first or second object beam that transfers the alignment marks (10) in the mask (11) into the holographic layer (14) illuminates the mask (11) at an accurately determined angle, preferably normal incidence, in order that the alignment marks (10) formed in the holographic recording layer (14) are accurately registered with respect to the pattern (12) to be reconstructed from the total internal reflection hologram. A method according to any of the preceding claims 1 to 4 wherein two alignment marks (10) are introduced into the mask (11) at opposite sides of a circuit pattern (12). A method according to claim 5 wherein each alignment mark (10) is a chevron comprising two orthogonal arms (8). Use of alignment marks (10) formed according to any of claims 1 to 6 for measuring the relative positions of the marks (10) in a hologram (11) and corresponding marks on a wafer surface by an alignment system.

Inventors: OMAR BASIL ARTHUR, OMAR, BASIL ARTHUR, Omar, Basil Arthur, c/o Holtronic Technologies Ltd
Applicants: HOLTRONIC TECHNOLOGIES LTD, HOLTRONIC TECHNOLOGIES LTD.
Application year: 1993
Main classification: G03F9
IPC codes: G03F9