Semiconductor laser device

Abstract: There is provided a semiconductor laser device that can be driven for a high-output power level without degradation in the quality of the device. It comprises a double heterostructure including an active layer (5, 25) and an electrode layer (9, 29) arranged on a semiconductor substrate (1, 21) having a current injection region extending through the electrode layer (9, 29) and the active layer (5, 25), a structural scheme being provided either in a region located above the active layer (5, 25) or in a region covering an resonator of the active layer (5, 25) in order to reduce the injection current level of the device. With such an arrangement, the energy output level of the semiconductor laser device is remarkably enhanced and its reliability is greatly improved, because it can be driven for a high-output power level without degradation in the quality of the device.

Description: This invention relates to a semiconductor laser device and more particularly but not solely to a high-output semiconductor laser device for use in telecommunication or optical applications. There has been an increasing demand for high-output GaAs semiconductor lasers for use in telecommunication and optical applications. A disadvantage of such high-output lasers is that catastrophic optical damage and corrosion can occur at the facets of the laser, when the device is used continuously for a long period of time. It is believed that these problems take place when the temperature of the facets of the laser device are subjected to a repetition of the cycle of rise in the surface temperature, reduction in the band gap, light absorption and increase in the surface recombination current. A proposed known solution for these problems is the provision of a structure (window structure) that effectively prevents the phenomenon of light absorption from occurring at the facets of a semiconductor laser. More specifically, such a structure comprises part of an active layer that can effectively expand the band gap and hence suppress light absorption and avoid optical damage to the semiconductor laser device due to light absorption. With such a preventive measure as described above, however, the semiconductor laser device can also be degraded as the surface recombination current running on the device increases as a result of an electric current given rise to by a bias voltage applied to the facets of the device having a band gap expanding area, and the heat generated by the Joule effect of the current. In view of the above problems, it is, therefore, an object of the invention to provide a semiconductor laser that can be driven at a high-output power level without degradation in the quality of the device. In accordance with this invention, there is provided a semiconductor laser device comprising a plurality of layers including an active layer and an electrode layer arranged on a semiconductor substrate to form a double heterostructure and having a laterally-confined current injection region extending through the electrode layer and the active layer, a Schottky junction of a metal and a semiconductor having a relatively high threshold voltage being formed above the active layer in order to reduce the injection current level of the device at the location of the Schottky junction, the Schottky junction occupying a zone which extends across the current injection region adjacent a light reflecting surface of the device. With a Schottky junction formed close to a light reflecting facet of the current injection region of the semiconductor laser device, the injection current density of that area is lower than that of the remaining area of the device. By so reducing the injection current density in the above-mentioned area, significant temperature rise of the light reflecting facets (in the current injection region) is effectively prevented during current injection so that no reduction of the band gap of the device or consequent light absorption will take place. It should be noted that such an arrangement can be easily realized when manufacturing semiconductor laser devices of the type under consideration. The optical output characteristics of the semiconductor laser device are remarkably improved to greatly enhance the reliability of the device when the rate of generation of heat by the Joule effect is suppressed in the above-mentioned area of the device. An embodiment of this invention will now be described by way of example only and with reference to the accompanying drawings, in which: Fig. 1 is a schematic front view of an embodiment of semiconductor laser in accordance with this invention; Fig. 2 is a schematic partial sectional view along the line A-A of Fig. 1; and Fig. 3 is a graph showing the relationship between the electric current and the voltage at the two opposite ends of a ridge mesa of the device of Fig. 1, and a similar relationship observed between two different points of the ridge mesa of the device. Referring to Figs. 1 and 2 of the drawings, the device comprises an n-GaAs substrate 1, an n-GaAs buffer layer 2, an n-InGaP lower clad layer 3, and n-GaAs lower light confinement layer 4, a p-In 0.2 Ga 0.8 As active layer 5, a p GaAs upper light confinement layer 6, a p-InGaP upper clad layer 7, a p + GaAs cap layer 8, a p-electrode layer 9, an n-electrode layer 10 and a polyimide layer 11. A semiconductor laser device as illustrated in Figs. 1 and 2 may typically be prepared in a manner as described below. Firstly, an n-GaAs buffer layer 2 with a thickness of 0.5µm and n=1x10 18 cm -3 , an n-InGaP lower clad layer 3 with a thickness of 1.2µm and n=1x10 18 cm -3 , an n-GaAs lower light confining layer 4 with a thickness of 0.03µm and n=3x10 17 cm -3 , a p-In 0. 2 Ga 0. 8 As active layer 5 with a thickness of 80Å and n=3x10 17 cm -3 , a p-GaAs upper light confining layer 6 with a thickness of 0.03µm and n=3x10 17 cm -3 , a p-InGaP upper clad layer 7 with a thickness of 1.0µm and n=1x10 18 cm -3 and a p + -GaAs cap layer 8 with a thickness of 0.5µm and n=4x10 19 cm -3 are sequentially formed on an n-GaAs substrate 1 in a crystal growth process using an epitaxial growth technique. Thereafter, a ridge mesa is formed to a ridge width of 2µm and a cavity length of 800µm on the n-GaAs substrate 1 in a mesa formation process using a photolithography technique. Subsequently, a narrow etching mask is laid on the upper surface of the ridge mesa and then the cap layer 8 is removed except the masked area by photolithography. Since the etching mask is 740µm long and covers a middle portion of the ridge mesa having a length of 800µm, the latter is etched at the opposite end sections by 30µm on the light reflecting facet side. Finally, the etched opposite side sections on either side of the ridge mesa are filled with a polyimide layer 11 and then a Ti/Pt/Au p-electrode layer 9 and a metal n-electrode layer 10 are fitted respectively to the epitaxially grown side and the lower surface of the n-GaAs substrate 1 to produce a complete ridge waveguide type semiconductor laser device. Note that, in the above embodiment, the titanium (Ti) constituting part of the p-electrode plate 9 is held in contact with the p-InGaP (p-1x10 18 cm -3 ) upper clad layer 7 at the opposite end sections of the ridge mesa while all the remaining surface areas of the titanium of the plate 9 is held in contact with the p + -GaAs(n=4x10 19 cm -3 ) cap layer 8. In an experiment conducted by using the above embodiment of semiconductor laser device, the current-voltage relationship was determined between the p-electrode 9 and the cap layer 8 and between the p-electrode 9 and the upper clad layer 7 by means of a known method of measurement. The results are illustrated in Fig. 3. Referring to Fig. 3, it will be understood that the voltage is higher between the opposite ends of the ridge mesa (electric current path (1)) than between any two other points of the ridge mesa (electric current path (2)). The reason for this is that a Schottky junction is formed by InGaP doped to a low concentration level and Ti as described above. Incidentally, it should be noted that an excellent ohmic junction is formed by GaAs doped to a high concentration level and Ti. Therefore, the embodiment (hereinafter referred to as Example 1) will show a relatively low injection current level at the opposite ends of the ridge mesa when it is driven for laser emission. For the purpose of comparison, an unconfined current injection type semiconductor laser device having a ridge mesa with unetched opposite ends was prepared in a manner similar to that of preparing Example 1 (hereinafter referred to as Comparison Example 1). Then, the destruction optical output at which the laser emitting surface comes to be destroyed due to temperature rise and the increase rate of the threshold current when driven at 50°C and 100mW for 1,000 hours were determined for both Example 1 and Comparison Example 1, as listed below. Example 1 -- the destruction optical output: 400mW the increase rate of the threshold current: 1% Comparison Example 1 -- the destruction optical output: 300mW the increase rate of the threshold current: 5% Clearly, Example 1 showed a destruction optical output greater than that of Comparison Example 1 although the increase rate of the threshold current of Example 1 was not significantly lower than that of Comparison Example 1. The destruction optical output and the increase rate of the threshold current of a substitute example obtained by arranging an insulating object between the electrode layer and the active layer and close to a light reflecting facet of the current injection region showed similar results.

Claims: A semiconductor laser device comprising a plurality of layers including an active layer (5) and an electrode layer (9) arranged on a semiconductor substrate (1) to form a double heterostructure and having a laterally-confined current injection region extending through the electrode layer (9) and the active layer (5), a Schottky junction of a metal (9) and a semiconductor (7) having a relatively high threshold voltage being formed above the active layer (5) in order to reduce the injection current level of the device at the location of the Schottky junction, the Schottky junction occupying a zone which extends across the current injection region adjacent a light reflecting surface of the device.

Inventors: KIKUTA TOSHIO, OHKUBO MICHIO, KIKUTA, TOSHIO, OHKUBO, MICHIO
Applicants: FURUKAWA ELECTRIC CO LTD, THE FURUKAWA ELECTRIC CO., LTD.
Application year: 1993
Main classification: H01S3
IPC codes: H01S5