Electrode structure of a liquid crystal display device and method of manufacturing the liquid crystal display device

Abstract: In a liquid crystal display device according to the invention, one of electrodes (51, 151) holding a liquid crystal composition (101) therebetween is formed by a shading conductor (53) having light-transmitting holes or slits (52). The display device of the invention can reduce a required amount of indium (In), a rare metal, and can have a high light transmittance.

Description: This invention relates to a liquid crystal display device having a liquid crystal composition held between a pair of electrodes and a method of manufacturing the liquid crystal display device, and more particularly to an improvement in the electrode structure of a liquid crystal display device. Recently, liquid crystal display devices have been used as TV or graphic display devices in various technical fields, since they are compact, light, and of low power consumption. Various types of liquid crystal display devices are available, for example, a simple matrix type display device employing pairs of stripe electrodes arranged in the form of matrix, and a liquid crystal composition held between each pair of stripe electrodes; an active matrix type display device employing a switching element provided for each display pixel. In each of the liquid crystal display devices, it is necessary to make at least one electrode substrate of each electrode pair be transparent. That is, in each pair, at least one electrode must be light transmissible, as well as its substrate. As transparent materials for the electrode, an NESA (stannic oxide) film and an I.T.O. (Indium Tin Oxide) film are well known. In particular, demand for an I.T.O. film as a transparent electrode material goes on increasing, since it can be easily patterned in a photoetching process or the like, as compared with other transparent electrode materials, and it has a high light transmittance and electrical conductivity. However, the I.T.O. film contains indium (In), which is a very rare metal, and hard to collect. Therefore, development of transparent electrode materials to be used in place of the I.T.O. film have actively been conducted these years. Further, development of a liquid crystal display device has been requested, which has an electrode structure made of a low-cost material in place of I.T.O. and having a high light transmittance. It is the object of the invention to provide a liquid crystal display device of an electrode structure made of a low-cost material in place of the I.T.O. film and having a high light transmittance, and a method of manufacturing such display device. According to a first aspect of the present invention there is provided a liquid crystal display device comprising: a first substrate, a first electrode structure formed on one side of the first substrate, a second substrate located opposed to the first substrate with a gap interposed therebetween, a second electrode structure formed on the side of the second substrate which is opposed to the first electrode structure, a liquid crystal composition filled in the gap between the first and second substrates, and an array of picture elements defined with the liquid crystal composition by overlaping display areas of the first electrode structure and the second electrode structure for respectively controlling the transmision of light rays, said liquid crystal display device being characterized in that the first electrode structure includes a first electrode layer made of a conductive material which prevents the light rays from passing therethrough which layer, at the areas corresponding to the picture elements, has an opening structure with a plurality of openings for passing the light rays therethrough. According to a second aspect of the present invention there is provided a method of manufacturing an active matrix type liquid crystal display device having a plurality of picture elements arranged in an array for respectively controlling the transmision of light rays, said method comprising: the step of forming a first liquid crystal substrate structure, said step including: the step of forming a plurality of scanning lines and gate electrodes of switching elements; the step of coating the gate electrodes with an insulating film on one surface side of a first substrate (11); the step of forming a semiconductor layer on the insulating film and patterning the semiconductor layer to form semiconductor elements of the switching elements on switching regions of the insulating film; the step of forming pixel electrodes on pixel regions of the surface side of the first substrate; the step of forming source and drain electrodes and signal lines on the insulating film, the drain electrodes being electrically connected to the corresponding signal line and each of the drain electrodes being connected to the corresponding pixel electrodes; and the step of coating the pixel electrodes with an orientation film, characterized in that each of the pixel electrodes is made of a conductive material which prevents the light rays to pass therethrough and has a plurality of openings for allowing the light rays to pass therethrough. This invention can be more fully understood from the following detailed description when taken in conjunction with the accompanying drawings, in which: Fig. 1 is a schematic front view, showing a matrix array substrate employed in a liquid crystal display device according to a first embodiment of the invention; Fig. 2 is a schematic cross-sectional view, taken along line A-A' in Fig. 1; Figs. 3A to 3D are cross-sectional views, showing a manufacturing process of the liquid crystal display device of Fig. 1; Fig. 4 is a schematic front view, showing a matrix array substrate of a liquid crystal display device according to a modification of the first embodiment of Fig. 1; Fig. 5 is a schematic enlarged front view, showing part of a matrix array substrate of a liquid crystal display device according to another modification of the first embodiment of Fig. 1; Fig. 6 is a schematic front view, showing a matrix array substrate of a liquid crystal display device according to a further modification of the first embodiment of Fig. 1; Fig. 7 is a schematic front view, showing a matrix array substrate employed in a liquid crystal display device according to a second embodiment of the invention; Fig. 8 is a schematic cross-sectional view, taken along line B-B' in Fig. 7; Figs. 9A to 9D are cross-sectional views, showing a manufacturing process of the liquid crystal display device of Fig. 7; Fig. 10 is a schematic front view, showing a matrix array substrate of a liquid crystal display device according to a modification of the second embodiment of Fig. 7; Fig. 11 is a graph, showing dependence of the optical response of a liquid crystal composition on transmission-hole pitch; Fig. 12 is a view, useful in explaining the operation of a liquid crystal display device according to the invention; Fig. 13 is a view, useful in explaining the operation of another liquid crystal display device according to the invention; Fig. 14 is a schematic perspective view of a counter electrode substrate of a liquid crystal display device according to the invention; Fig. 15 is a schematic cross sectional view, showing a simple matrix type liquid crystal display device according to a further embodiment of the invention; and Fig. 16 is a schematic front view, showing a matrix array substrate of a liquid crystal display device according to a yet another modification of the embodiment of the invention. The embodiments of the invention will now be explained in detail with reference to the accompanying drawings. Fig. 1 is a schematic view of a matrix array substrate 71 of a liquid crystal display device 1 according to a first embodiment of the invention. Fig. 2 is a cross-sectional view taken along line A-A' in Fig. 1. As is shown in Figs. 1 and 2, a plurality of signal lines 21 and a plurality of scanning lines 31 electrically isolated from the signal lines 21 are provided in the form of matrix on a transparent glass substrate 11. A thin film transistor 41 consisting of an amorphous silicon (a-Si) film is formed on each intersection of the lines 21 and 31. Each signal line 21 is connected, via a channel region 41a of the thin film transistor 41, to a pixel electrode 51 consisting of a shading conductor or light shield conductor 53 with light-transmitting holes 52. As is shown in Fig. 2, the thin film transistor 41 has a structure in which a gate electrode 31a extending from the scanning line 31 is coated with an insulating film 35, the amorphous silicon (a-Si) film 41a is formed on the insulating film 35, and a drain electrode 21a and a source electrode 51a extend from the signal line 21 and pixel electrode 51 onto the amorphous silicon film 41a, respectively. The shading conductor 53 consists of an a-Si film which prevents light rays to pass therethrough or attenuates the light rays, and has square light-transmitting holes 52 arranged with a pitch (P1) of 15 µm to allow the light rays to pass therethrough. Thus, the shading conductor 53 is formed such that a plurality of stripe electrodes having a width of approx. 4 µm intersect each other. An orientation film 61 having been rubbed in a predetermined direction is provided on the shading conductor 53, thus forming the matrix array substrate 71. A common electrode 151 and an orientation film 161, which consist of I.T.O. films, are formed on a transparent glass substrate 111, thus forming a counter electrode substrate 171. A liquid crystal composition 101 is held with a pitch of 15 µm between the pixel electrode 51 and common electrode 151 constructed as above, and polarization plates 81 and 181 are provided on the outer surfaces of the matrix array substrate 71 and counter electrode substrate 171, respectively, thus forming the liquid crystal display device 1. If the pitch of holding the composition 101 is made 5 - 10 µm, the composition 101 in the hole 52 can have a high responsiveness. Then, a method of forming the liquid crystal display device 1 of the first embodiment will be explained with reference to Figs. 3A to 3D. First, as is shown in Fig. 3A, a tantalum (Ta) film having a thickness of 3000 Å is formed on the transparent glass substrate 11 by sputtering. Then, the scanning lines 31 and gate electrodes 31a connected thereto are formed on the substrate 11 by photoetching. Thereafter, as is shown in Fig. 3B, the SiOx insulating film 35 having a thickness of 3500 Å is formed on the resultant structure, and subsequently an a-Si film having a thickness of 2000 Å and to be used as the channel region 41a of the thin film transistor 41 is formed by plasma CVD then patterned, thereby forming the channel region 41a and the pixel electrode 51 consisting of the shading conductor 53 and light-transmitting holes 52 formed therein and arranged with a line width of 4 µm and a pitch (P1) of 15 µm. It is most preferable to make more than 2000 Å the thickness of the shading conductor 53 consisting of the a-Si film, in consideration of a reduction in the resistance of the electrode. Subsequently, an aluminum (Aℓ) film having a thickness of 5000 Å is formed by sputtering, and is patterned as shown in Fig. 3C, thereby forming the drain electrode 21a connecting the signal line 21 to the channel region 41a of the thin film transistor 41, and the source electrode 51a connecting the pixel electrode 51 to the channel region 41a. Then, as is shown in Fig. 3D, the orientation film 61 is provided on the resultant structure, and is rubbed in a predetermined direction, thereby forming the matrix array substrate 71. The shading conductor 53 may be made of a metal, an alloy, an amorphous substance, or a polycrystalline substance. In particular, aluminum (Aℓ) and tantalum (Ta), which have a high conductivity and can be patterned easily, are preferable among metals, and amorphous silicon (a-Si) and polysilicon (p-Si), which can be produced easily and uniformly, are preferable among amorphous polycrystalline substances. According to the liquid crystal display device 1 of the first embodiment, the pixel electrode 51 consists of the shading conductor 53 made of an a-Si film and having light-transmitting holes 52 arranged with a predetermined pitch, so that the amount of a rare metal, indium (In), to be used can be reduced. Further, the monochrome liquid crystal display device 1 has a light transmittance of 17 %, which value is substantially equal to that obtained in the case of forming the pixel electrode 51 by an I.T.O. film. In addition, using the a-Si film as the conductor 53 can considerably reduce its resistance at the time of radiation of light, which means that the a-Si film is very advantageous as an electrode material. Moreover, in the device 1 of the first embodiment, the pixel electrode 51 can be formed in the same process as the channel region 41a of the thin film transistor 41, so that the manufacturing cost can be reduced as compared with the case of forming the pixel electrode 51 in a different process from the channel region 41a. Further, although in the first embodiment, the direction of each edge of the light-transmitting hole 52 of the shading conductor 53 is not parallel with the line of the direction in which the orientation film 61 is rubbed, it is preferable to form a matrix array substrate 72 having pixel electrodes 51 with light-transmitting holes 52 each arranged such that two edges thereof are located in a direction corresponding to the rubbing direction of the orientation film 61, as is shown in Fig. 4. By employing the thus-constructed matrix array substrate 72 in the liquid crystal display device, the number of those edges of the holes 52 which are not parallel with the line of the rubbing direction is reduced, thereby causing no orientation defects, and providing a display image having a high effective contrast ratio. The shape of the light-transmitting hole 52 formed in the shading conductor 53 is not limited to a square, but may be a hexagon, as shown in Fig. 5. Also in this case, no orientation defects occur, and a display image of a high effective contrast ratio can be obtained. In addition, although in the first embodiment and modifications, each pixel electrode 51 consists of the shading conductor 53 and the light-transmitting holes formed therein, a matrix array substrate 73 may be formed which employs pixel electrodes 51 each consisting of a shading conductor 53 and light-transmitting slits 54 formed therein, as is shown in Fig. 6. In this case, a plurality of slits 54 are formed in the shading conductor 53 of an a-Si film, in the rubbing direction with a slit pitch (P2) of 15 µm, and the pixel electrodes 51 are electrically connected to the source electrode 51a. The line width of the shading conductor 53 is 4 µm. In such a liquid crystal display device as employs the matrix array substrate 73, a liquid composition appearing through the shading conductor 53 could show a good optical response through the shading conductor 53, and provide a display image as superior as that obtained in the above-described embodiment. Also in this case, the ratio of the open areas of the pixel electrode 51 to the shaded areas of the same could be enhanced from 17 % to 25 %, as compared with the case of arranging the light-transmitting hole 52 in the a-Si shading conductor 3 in the form of a matrix. In the first embodiment and modification, the shading conductor 53 is formed by an a-Si film, which may provide an overall reddish display image since the a-Si film has the property of transmitting red light. However, a good display image can be obtained by adjusting the wavelengths of the light source or restraining red light with the use of a filter or the like. The shading conductor 53 can be made of a material other than the a-Si film. For example, it may be formed integral with the source electrode 51a of the thin film transistor 41. This enables a liquid crystal display device to be produced without increasing the number of manufacturing steps. Then, a liquid crystal display device 3 according to a second embodiment of the invention will be explained with reference to Figs. 7 to 9D. In these figures, elements corresponding to those in the first embodiment are denoted by corresponding reference numerals. Fig. 7 is a schematic view, showing a matrix array substrate 74 employed in the liquid crystal display device 3, while Fig. 8 is a schematic cross sectional view taken along line B-B'' in Fig. 7. A plurality of signal lines 21 and scanning lines 31 are arranged in the form of a matrix on a transparent glass substrate 11. A thin film transistor 41 having the same structure as that shown in Fig. 2 is formed on each intersection of the lines 21 and 31. Each signal line 21 is connected to a pixel electrode 51 via the thin film transistor 41. As is shown in Fig. 8, the pixel electrode 51 consists of a transparent resistor 55 formed by a tantalum oxide film, a shading conductor 53 made of aluminum (Aℓ) formed on the resistor 55, and a plurality of substantially square light-transmitting holes 52 formed in the conductor 53. The holes 52 are arranged with a hole pitch of 20 µm and a line width of 5 µm such that two edges of each hole 52 are parallel with the line of the rubbing direction of the orientation film 61. A common electrode 151 and an orientation film 161, which are formed by I.T.O. films, are provided on the transparent glass substrate 11, thus forming a counter electrode substrate 171. A liquid crystal composition 101 is held between the pixel electrode 51 and common electrode 151 with a pitch of 10 µm, and polarization plates 81 and 181 are provided on the outer surfaces of the matrix array substrate 74 and counter electrode substrate 171, respectively, thereby forming the liquid crystal display device 3. A method of producing the liquid crystal display device 3 shown in Figs. 7 and 8 will be explained briefly. As is shown in Fig. 9A, a tantalum (Ta) film having a thickness of 3000 Å is formed on the glass substrate 11 by sputtering, and then the scanning lines 31 and gate electrodes 31a connected to the electrodes 31 are formed by photoetching. Thereafter, as is shown in Fig. 9B, the SiOx insulating film 35 having a thickness of 3500 Å is formed on the resultant structure, and subsequently an a-Si film having a thickness of 2000 Å and to be used as the channel region 41a of the thin film transistor 41 is formed by plasma CVD and then patterned, thereby forming the channel region 41a. As is shown in Fig. 9C, in order to form the pixel electrode 51, a tantalum oxide film having a thickness of 1000 Å is formed on the resultant structure by sputtering, and then patterned to form a strip of the transparent resistor 55. Thereafter, an Aℓ film having a thickness of 5000 Å is formed by sputtering and then patterned, thereby forming the drain electrode 21a connecting the signal line 21 to the thin film transistor 41, and forming the shading conductor 53 having the light-transmitting holes 52, integrally as one piece with the source electrode 51a connected to the transistor 41. Thereafter, the orientation film 61 is provided on the resultant structure, and then rubbed in a direction substantially parallel with two edges of each light-transmitting hole 52, thus forming the matrix array substrate 74 (these steps are not shown in Figs. 9A to 9C). The amount of indium (In), a rare metal, used in the device could considerably be reduced, since the above-described liquid crystal display device 3 employed the pixel electrode 51 of a laminated structure consisting of the transparent resistor 55 made of a tantalum oxide film, and the shading conductor 53 made of an aluminum (Aℓ) film and having the light-transmitting holes 52. Further, though the liquid crystal display device 1 of the first embodiment had an optical transmittance of 17 %, the display device 3 of the second embodiment had as much an optical transmittance as 25 %, since the hole pitch of the device 3 was 20 µm, which was larger than that of the device 1, i.e., 15 µm. Though in the second embodiment, the shading conductor 53 consists of an aluminum film having a plurality of light-transmitting holes 52 formed therein, it may consist of an aluminum film having a plurality of light-transmitting slits 54 as shown in Fig. 10. This structure could further enhance the opening ratio of each electrode, and hence enhance the light transmittance from 25 % to 33 %. Rubbing the orientation film 61 in a direction parallel with the light-transmitting slits 54 can prevent occurrence of an orientation defect, and provide superior display characteristics. Although in the second embodiment, the shading conductor 53 consists of an aluminum film, it may consist of an a-Si film as in the first embodiment. Also, though in the second embodiment, the transparent resistor 55 consists of a tantalum oxide film, it may consist of any one of metal oxides having different light transmittances, such as zinc oxide, molybdenum oxide, tungsten oxide. It is preferable to use a volume resistance of 10 - 10 6 Ωcm in order to obtain a satisfactory effect. Furthermore, though in the second embodiment, the pixel electrode 51 consists of the transparent resistor 55 and the shading conductor 53 laminated on the upper surface of the resistor 55, the resistor 55 may be laminated on the upper surface of the shading conductor 53. In the latter case, the unevenness of the surface of the pixel electrode 51 can be reduced, and occurrence of a defect in the orientation of the orientation film 61 can be minimized. As is described above, in the liquid crystal display device of the invention, the pixel electrode 51 is formed by a shading conductor having light-transmitting holes or slits. These holes or slits enable the electrode formed by a shading conductor to have a satisfactory light transmittance. It could be confirmed that a liquid crystal composition appearing through the light-transmitting holes or slits can show sufficient optical response. The reason why the liquid crystal composition appearing the light-transmitting holes or slits shows sufficient optical response is not exactly understood. However, it is presumed that this phenomenon is caused by lines of electric force and accumulated electric charge. Fig. 11 is a graph, taking a hole pitch along the abscissa and along the ordinate the ratio of optical response of that part of a liquid crystal composition which contacts an insulating area of a square light-transmitting hole. In Fig. 11, curve (a) indicates the relationship between the hole pitch and the ratio of optical response when the device is driven at a response speed of 50 msec, curve (b) when the device is driven at a response speed of 100 msec, and curve (c) when the device is driven at a response speed of 200 msec. The pitch of the light-transmitting holes or slits indicates the distance between points corresponding to the gravity centers of each adjacent pair of light-transmitting holes or slits. As can be understood from Fig. 11, particularly where the hole pitch is 15 µm or less, the optical response of the liquid crystal composition is more than 60 %, even if the device is driven at a high response speed of 50 msec. In consideration of this, actually it is preferable to set the hole or slit pitch to 5 - 40 µm, and more preferable to set it to 5 - 15 µm. If the pitch is less than 5 µm, the accuracy at which the shading conductor is patterned will lower, which may cause a breakage in wiring or a defect in holes or slits. On the other hand, if the pitch is more than 40 µm, the ratio of the optical response of the liquid crystal composition will lower, which may make it impossible to obtain good display images. The line width between each adjacent pair of the light-transmitting holes or slits is preferably adjusted so as to maximize the opening ratio of each electrode. The ratio can be made more than 60 % with ease if the line width between the slits is set to 5 µm or less. As regards the location of the light-transmitting hole or slit, it is preferable to locate the hole such that at least two edges thereof are substantially parallel with the line of the rubbing direction, or to locate the slit substantially parallel with the line of the rubbing direction. This location can reduce the number of those edges of the shading conductor which cross the line of the rubbing direction at an angle, thereby causing no orientation defects. The above effect of the appropriate location of the hole or slit will be explained in more detail with reference to Figs. 12 and 13. In a case where each pixel electrode provided on the matrix array substrate of a liquid crystal display device consists of a shading conductor 601 having square light-transmitting holes 611 arranged such that a diagonal of each hole is parallel with the line of the rubbing direction, as is shown in Fig. 13, an orientation defect will occur in that portion 621 in the vicinity of the outline of the shading conductor 601, which is located at an angle to the line of the rubbing direction. This seems because the thickness of the orientation film in a region wherein the shading conductor 601 exists differs from the thickness of the same in a region wherein no shading conductor exists, and therefore a satisfactory rubbing treatment cannot be made to the orientation film in the portion 621 in the vicinity of the outline of the shading conductor 601. On the other hand, as is shown in Fig. 12, where a shading conductor 701 having light-transmitting holes 711 is constructed such that at least two edges of each hole 711 are substantially parallel with the line of the rubbing direction, that portion 721 in the vicinity of the outline of the conductor 701 which is located at an angle to the line of the rubbing direction can be minimized, thereby minimizing the orientation defect. Although in the above-described embodiments and modifications, each pixel electrode in the active matrix type liquid crystal device is formed by a shading conductor having light-transmitting holes or slits, the common electrode opposed to the pixel electrodes may be formed by the shading conductor having light-transmitting holes or slits. For example, Fig. 14 is a schematic perspective view of the counter electrode substrate. A common electrode 161 is made of Cr, and has regions aligned with the pixel electrodes and having square light-transmitting holes 162 arranged as in the aforementioned embodiments. In this common electrode 161, a region 165 between two groups of the light-transmitting holes can positively be used as a black matrix, since it is not transparent. Accordingly, without any particular black matrix, undesirable light can be prevented from being radiated onto thin film transistors, thereby obtaining a good display image. Further, where the common electrode is formed by a shading conductor, light may reflect on the shading conductor, causing undesirable light radiation onto thin film transistors. To avoid this, the shading conductor may be blacken, or in the case of performing color display, a color filter may be provided on the common electrode. Although in the above-described embodiments and modifications, the invention is applied to active matrix type liquid crystal devices, it is also applicable to a simple matrix type liquid crystal device as shown in Fig. 15, in which stripe electrodes 220 are formed on a glass substrate 11, extending substantially parallel with one another in the Y direction of X-Y coordinates, and stripe electrodes 222 are formed on a glass substrate 111, extending substantially parallel with one another in the X direction. In this case, a structure in which at least one stripe electrode 220 or 222 is formed by a stripe conductor having light-transmitting holes 52 or slits 54 can reduce the amount of indium (In), a rare metal, used in the device, without lowering the light transmittance. Preferably, the light-transmitting holes or slits are provided only in a region in which a pair of stripe electrodes are overlapped to form display pixels, in consideration of the resistances of the electrodes. The same can be said of a common electrode employed in an active matrix type liquid crystal display device. In Fig. 15, reference numerals corresponding to those in other figures denote corresponding elements, and explanation of the elements is omitted. In the liquid crystal display device of Fig. 15, at least one of the electrodes 220 and 222 may be formed by a shading conductor having light-transmitting holes or slits, and a transparent resistor member laminated on the conductor and having a resistance higher than the same. By virtue of this laminated structure, the size of the hole or slit can be made as large as about 40 µm. Thus, the opening ratio of each electrode can be further enhanced without reducing the response speed of the device. The above-described active or simple matrix type liquid crystal device has light-transmitting holes or slits of a predetermined size regularly arranged with a predetermined pitch. However, this may be modified such that slits extend in more than one directions in a pixel electrode, as shown in Fig. 16. This arrangement of slits causes the liquid crystal composition on the pixel electrode to be oriented in different directions, thereby causing different operations of the composition. Therefore, the modification provides an improvement in visual field. As is explained above in detail, the liquid crystal display device of the invention employs a small amount of indium (In), a rare metal, and has a high light transmittance.

Claims: A liquid crystal display device comprising: a first substrate (11), a first electrode structure (51, 220) formed on one side of the first substrate (11), a second substrate (111) located opposed to the first substrate (11) with a gap interposed therebetween, a second electrode structure (151, 222) formed on the side of the second substrate which is opposed to the first electrode structure (51, 220), a liquid crystal composition (101) filled in the gap between the first and second substrates (11, 111), and an array of picture elements defined with the liquid crystal composition (101) by overlapping display areas of the first electrode structure (51, 220) and the second electrode structure (151, 222) for respectively controlling the transmision of light rays, characterized in that: the first electrode structure (51, 220) includes a first electrode layer made of a conductive material which prevents the light rays from passing therethrough, which layer, at the areas corresponding to the picture elements, has an opening structure with a plurality of openings (52, 162) for passing the light rays therethrough. The liquid crystal display device according to claim 1, characterized in that said first electrode structure (220) includes a plurality of electrodes arranged on the first substrate (11) substantially parallel with one another. The liquid crystal display device according to claim 1, characterized in that said first electrode structure (51) includes an array of pixel electrodes on the first substrate (11). The liquid crystal display device according to any one of claims 1 to 3, characterized in that the first electrode structure (51) includes a transparent conductive layer (55) of a resistance higher than that of the first electrode layer. The liquid crystal display device according to any one of claims 1 to 4, characterized by further comprising a first orientation film (61) formed on the first electrode structure (51, 220) rubbed in a first direction, a second orientation film (161) formed on the second electrode structure (151, 222) rubbed in a second direction, and wherein each of the openings (52, 152) formed in the first electrode structure (51, 220) has two edges substantially parallel with the line of the first direction. The liquid crystal display device according to any one of claims 1 to 5, characterized in that the openings (52, 162) extend in a predetermined direction like a slit. The liquid crystal display according to any one of claims 1 to 6, characterized in that the openings (52, 162) are regularly arranged with a predetermined direction pitch. The liquid crystal display device according to claim 3, characterized by further comprising: switching elements (41) arranged in the array and formed on said first substrate (11), each switching element (41) including a gate electrode (31a), an insulating layer (35) formed on the gate electrode (31a), a semiconductor layer (41a) formed on the insulating layer (35), and a source electrode (51a), each switching element being connected to a corresponding first electrode and a drain electrode (21a), a plurality of scanning lines (31) arranged on the first substrate (11) substantially parallel with one another and connected to the corresponding gate electrodes (31a) of said switching elements (41), and a plurality of signal lines (21) arranged on the first substrate (11) substantially parallel with one another, electrically insulated from said scanning lines (31) and the gate electrodes (31a) of said switching elements (41) and connected to the corresponding drain electrodes (21a) of said switching elements (41), wherein: the second electrode structure (151) includes a common electrode corresponding to the plurality of first electrodes so as to form the plurality of the pixel elements which are arranged in an array controlling light rays, respectively. A method of manufacturing an active matrix type liquid crystal display device having a plurality of picture elements arranged in an array for respectively controlling the transmision of light rays, comprising: the step of forming a first liquid crystal substrate structure, said step including: the step of forming a plurality of scanning lines (31) and gate electrodes (31a) of switching elements (41); the step of coating the gate electrodes (31a) with an insulating film (35) on one surface side of a first substrate (11); the step of forming a semiconductor layer (41a) on the insulating film (35) and patterning the semiconductor layer (41a) to form semiconductor elements (41a) of the switching elements (41) on switching regions of the insulating film (35); the step of forming pixel electrodes (51) on pixel regions of the surface side of the first substrate (11); the step of forming source and drain electrodes (21a, 51a) and signal lines (21) on the insulating film (35), the drain electrodes (21a) being electrically connected to the corresponding signal line (21) and each of the drain electrodes (51a) being connected to the corresponding pixel electrodes (51); and the step of coating the pixel electrodes (51) with an orientation film (61), characterized in that each of the pixel electrodes (51) is made of a conductive material which prevents the light rays to pass therethrough and has a plurality of openings (52) for allowing the light rays to pass therethrough. A method according to claim 9, characterized in that the pixel electrodes (51) are made of the semiconductor layer (41a), and the step of forming the semiconductor layer (41a) and the step of forming pixel electrodes (51) are the same step. A method according to claim 9, characterized in that the pixel electrodes (51) are made of the same material of the source and drain electrodes (21a, 51a), and the step of forming pixel electrodes (51) and the step of forming source and drain electrodes (21a, 51a) are the same step. A method according to claim 9 or 11, characterized in that said step of coating the orientation film (61) includes the step of rubbing the orientation film (61) in a direction parallel to a particular edge of each of the openings (52).

Inventors: HIGUCHI TOYOKI, KAWANO HIDEO, SHIBUSAWA MAKOTO, HIGUCHI, TOYOKI, KAWANO, HIDEO, SHIBUSAWA, MAKOTO, HIGUCHI, TOYOKI C/O INTELLECTUAL PROP.DIVISION, KAWANO, HIDEO C/O INTELLECTUAL PROPERTY DIVISION, SHIBUSAWA, MAKOTO C/O INTELLECTUAL PROPERTY DIV.
Applicants: TOSHIBA KK, KABUSHIKI KAISHA TOSHIBA
Application year: 1992
Main classification: G02F1
IPC codes: G02F1