Laser ablation process for preparing a superconducting thin film formed of compound oxide superconductor material and apparatus for executing such process

Abstract: A laser ablation process for preparing a compound oxide thin film characterized in that an electrode is arranged between a substrate and a target. While the film is formed by laser ablation, a bias voltage is applied between the electrode and the target.

Description: Background of the Invention Field of the invention The present invention relates to a laser ablation process for preparing a superconducting thin film and an apparatus for executing such a process, and more specifically to a laser ablation process for preparing a superconducting thin film formed of a compound oxide superconductor material, and an apparatus for executing the process. Description of related art A superconducting phenomenon is used to be thought as a phenomenon which occurs at extremely low temperature which is realized by liquid helium cooling. However, Bednorz and Müller et al discovered [La,Ba] 2 CuO 4 compound oxide superconductor which is superconducting at a temperature of 30K in 1986, Chu et al discovered Y 1 Ba 2 Cu 3 O 7-δ compound oxide superconductor of which the critical temperature T c is in the range of 90K in 1987, Maeda et al discovered compound oxide superconductors of so called Bi family of which the critical temperature T c is higher than 100K in 1988. Since these high-T c copper-oxide type compound oxide superconductors are superconducting by cheep liquid nitrogen cooling, practical applications of superconducting phenomena have been studied by many researchers. At the beginning, these compound oxide superconductors were prepared as sintered material which were synthesized by solid phase reactions. In these days, the studies have progressed so that extremely high quality compound oxide superconductor thin films have been prepared. In the prior art, a compound oxide superconductor thin film is deposited on a substrate at substrate temperatures over 700°C by a laser ablation process which is one of the most suitable process for preparing a compound oxide superconductor thin film. This high substrate temperature causes diffusion of constituent atoms into the depositing compound oxide superconductor thin film. The diffusion of the constituent atoms of the substrate may deteriorate properties of a compound oxide superconductor thin film considerably. Furthermore, it is known from Misra D.S. and al (Journal of Applied Physics, vol. 68, No. 3, 1 st August 1990, pp. 1403-1406) a laser ablation process and an apparatus for forming a superconducting film of YBaCuO on a SrTiO 3 substrate, in which the temperature of the substrate is lowered to about 500°C by incorporating an electrode between the substrate and the target and which is held to a negative potential with respect to said target and said substrate holder. It is also known from Singh R.K. and al. (Applied Physics Letters, vol. 54, No. 22, 29 May 1989, pp 2271-2273) a laser ablation process and apparatus for producing epitaxial YBa 2 Cu 3 O 7 films on (100) SrTiO 3 and (100) Yttrium Stabilized Zirconia (YSZ) substrates at a processing temperature of 500°C-650°C using a ring electrode placed at a distance of 42 mm from the substrate and positively biased at a voltage ranging between 300-400 V and at a laser energy density of 2-3 Joule/cm 2 in a 180-200 mTorr oxygen ambient. Summary of the Invention Accordingly, it is an object of the present invention to provide a laser ablation process for preparing a superconducting thin film formed of a compound oxide superconductor material, which overcomes the above mentioned defects of the conventional ones. Another object of the present invention is to provide an apparatus for executing such a process. The above and other objects of the present invention are achieved in accordance with the present invention by a laser ablation process for preparing a compound oxide thin film according to claim 1. According to another aspect of the present invention, there is provided an apparatus for a laser ablation process for preparing a compound oxide thin film according to claim 11. In accordance with the present invention, the substrate temperature can be lowered so as to prevent diffusion of constituent atoms into the depositing compound oxide superconductor thin film. The substrate temperature is preferably selected in a range of 400 to 650°C. In a preferred embodiment, the compound oxide superconductor thin film is formed of a high-T c (high critical temperature) oxide superconductor, particularly, formed of a high-T c copper-oxide type compound oxide superconductor for example a Y-Ba-Cu-O type compound oxide superconductor material, a Bi-Sr-Ca-Cu-O type compound oxide superconductor material, and a Tl-Ba-Ca-Cu-O type compound oxide superconductor material. In addition, the substrate can be formed of a single crystal oxide substrate such as a MgO (100) substrate, a SrTiO 3 (100) substrate, an yttrium stabilized zirconia (YSZ) substrate, etc. In a preferred embodiment, the laser ablation process is carried out under a condition of which gas pressure is selected in a range of 1.333 to 10.664 mPa (100 to 800 mTorr), laser power density of the laser-beam is selected in a range of 0.5 to 5.0 Joule/cm 2 and a distance between the substrate and the target is selected in a range of 30 to 100 mm. The above and other objects, features and advantages of the present invention will be apparent from the following description of preferred embodiments of the invention with reference to the accompanying drawings. Brief Description of the Drawings Figures 1 is a diagrammatic view of a preferred embodiment of the apparatus in accordance with the present invention; Figures 2 is a diagrammatic view of another preferred embodiment of the apparatus in accordance with the present invention; Figures 3 is a graph of the critical temperatures of compound oxide thin films against the bias voltages for a first embodiment of the process in accordance with the present invention; Figures 4 is a graph of the critical temperatures of compound oxide thin films against the bias voltages for a second embodiment of the process in accordance with the present invention; Figures 5 is a graph of the critical temperatures of compound oxide thin films against the bias voltages for a third embodiment of the process in accordance with the present invention. Description of the Preferred embodiments Figure 1 shows a diagrammatic view of one preferred embodiment of the apparatus in accordance with the present invention. In Figure 1, the apparatus includes a chamber 6 in which a substrate holder 2 on which a substrate 1 is secured, a target holder 4 on which a target 3 is secured in parallel with the substrate 1, and a electrode 5 arranged between the substrate 1 and the target 3 at a distance D from the substrate 1 are equipped. The chamber 6 includes a window 6a, an inlet 9 and an outlet 10. The window 6a is transparent for laser-beam which is oscillated by a laser light source 7. The laser-beam is focused on the target 3 by a lens 8. Arbitrary gases are supplied to the chamber 6 through the inlet 9, and the chamber 6 is evacuated through the outlet 10. Therefore, an atmosphere and a gas pressure of the chamber 6 can be controlled at will. The electrode 5 is formed of a cylindrical metal net which is arranged so as to surround a plume which is generated on the target 3 towards the substrate 1 by the laser-beam. The electrode 5 is connected to the anode of a bias source 5a of which cathode is connected to the target 3. Figure 2 shows another preferred embodiment of the apparatus in accordance with the present invention, which includes a electrode 50 which has different shape from that of the electrode 5 shown in Figure 1. Other components of the apparatus are substantially same as those of the apparatus shown in Figure 1, which are indicated by same reference numbers. Therefore, the following descriptions of the apparatus explain about electrode 50 mainly. The electrode 50 is formed of a plane metal net which is arranged between the substrate 1 and the target 3 at a distance D from the substrate 1 in parallel with the substrate 1 and the target 3. Embodiment 1 Y-Ba-Cu-O compound oxide superconductor thin films were prepared by laser ablation process in accordance with the present invention by using the apparatus shown in Figure 1. Different bias voltages ranging 0 to 150 volts were applied to the electrode 5 so that the electrode had a positive potential while each Y-Ba-Cu-O compound oxide superconductor thin film was formed by laser ablation. The electrode 5 was composed of a cylindrical Pt net which had a length of 10 mm and a diameter 20 mm, and was arranged at the distance of 3 mm from the substrate 1. An MgO(100) substrate was used for the substrate 1 and a Y 1 Ba 2 Cu 3.0 O y compound oxide sinter was used for the target 3. The other conditions of the laser ablation process were as follows; A graph of the critical temperatures of the Y-Ba-Cu-O compound oxide superconductor thin films against the bias voltages which were applied to the electrode 5 during the laser ablation process are shown in Figure 3. The graph shows that the critical temperatures of the Y-Ba-Cu-O compound oxide superconductor thin films which were prepared by the laser ablation process with applying bias voltage ranging 75 to 100 volts are 50K higher than that of the Y-Ba-Cu-O compound oxide superconductor thin films which were prepared without bias voltage. Data of X-rays diffraction meter showed that the Y-Ba-Cu-O compound oxide superconductor thin film changed from a mixture of a -axis oriented thin film and (110) oriented thin film to c -axis orientated thin film, as the bias voltage increased. It was proved that the surfaces of the Y-Ba-Cu-O compound oxide superconductor thin films which were prepared by the laser ablation process with applying bias voltage ranging 75 to 100 volts were extremely smooth by the observations of a scanning electron microscope Embodiment 2 Y-Ba-Cu-O compound oxide superconductor thin films were prepared by the laser ablation process in accordance with the present invention. The apparatus which was used for the process was same as the apparatus used in Embodiment 1 except that the electrode 5 was arranged at the distance of 20 mm from the substrate 1. Different bias voltages ranging 0 to 150 volts were applied to the electrode 5 so that the electrode had a positive potential while each Y-Ba-Cu-O compound oxide superconductor thin film was formed by laser ablation. Other conditions of the process were same as that of the process in Embodiment 1. A graph of the critical temperatures of the Y-Ba-Cu-O compound oxide superconductor thin films against the bias voltages which were applied to the electrode 5 during the laser ablation process are shown in Figure 4. The graph shows that the critical temperatures of the Y-Ba-Cu-O compound oxide superconductor thin films which were prepared by the laser ablation process with applying bias voltage of about 75 volts are extremely higher than that of the Y-Ba-Cu-O compound oxide superconductor thin films which were prepared without bias voltage. Data of X-rays diffraction meter showed that the Y-Ba-Cu-O compound oxide superconductor thin film changed from a mixture of a -axis oriented thin film and (110) oriented thin film to c -axis orientated thin film, as the bias voltage increased. It was proved that the surfaces of the Y-Ba-Cu-O compound oxide superconductor thin films which were prepared by the laser ablation process with applying bias voltage ranging 75 to 100 volts were extremely smooth by the observations of a scanning electron microscope Additionally, from the results of Embodiment 1 and 2, it was clear that the electrode 5 had to be arranged near the substrate 1 in order to prepare a compound oxide superconductor thin film of favorable properties. On the other hand, Y-Ba-Cu-O compound oxide superconductor thin films which were prepared with applying reverse bias voltage had semiconductor properties and were not superconducting at all. Embodiment 3 Y-Ba-Cu-O compound oxide superconductor thin films were prepared by laser ablation process in accordance with the present invention by using the apparatus shown in Figure 2. Different bias voltages ranging 0 to 150 volts were applied to the electrode 50 so that the electrode had a positive potential while each Y-Ba-Cu-O compound oxide superconductor thin film was formed by laser ablation. The electrode 50 was composed of a square Pt net of which a side was 20 mm, and was arranged at the distance of 5 mm from the substrate 1. An MgO(100) substrate was used for the substrate 1 and a Y 1 Ba 2 Cu 3.8 O y compound oxide sinter was used for the target 3. The other conditions of the laser ablation process were as follows; Laser wave length 193 nanometers Repetition rate 1 Hz Temperature of substrate 600°C Pressure 5.332 mPa(400mTorr) Distance from the substrate to the target 40mm Density of the Laser Power 0.7 Joule/cm 2 Thickness of the thin film 200-300 nanometers A graph of the critical temperatures of the Y-Ba-Cu-O compound oxide superconductor thin films against the bias voltages which were applied during the laser ablation process are shown in Figure 5. The graph shows that the critical temperatures of the Y-Ba-Cu-O compound oxide superconductor thin films which were prepared by the laser ablation process with applying bias voltage about 75 volts are extremely higher than that of the Y-Ba-Cu-O compound oxide superconductor thin films which were prepared without bias voltage. Data of X-rays diffraction meter showed that the Y-Ba-Cu-O compound oxide superconductor thin film changed from a mixture of a -axis oriented thin film and (110) oriented thin film to c -axis orientated thin film, as the bias voltage increased. It was proved that the surfaces of the Y-Ba-Cu-O compound oxide superconductor thin films which were prepared by the laser ablation process with applying bias voltage ranging 75 to 100 volts were extremely smooth by the observations of a scanning electron microscope As explained above, if the superconducting thin film is prepared in accordance with the process of the present invention, the temperature of substrate can be lowered during the laser ablation process. Therefore, it is easy to prepare the superconducting thin film with good repeatability, and the prepared superconducting thin film has a good film condition and a high performance. The invention has thus been shown and described with reference to the specific embodiments. However, it should be noted that the present invention is in no way limited to the details of the illustrated structures but converts and modifications may be made within the scope of the appended claims.

Claims: A laser ablation process for preparing a compound oxide thin film, wherein an electrode (5, 50) is arranged between a substrate (1) and a target (3), characterized in that the electrode (5,50) is formed of a net of Pt, Au or an alloy which includes either Pt or Au, shaped cylindrical or plane and arranged at a shortest distance selected in the range of 1 to 20 mm from the substrate, and a bias voltage selected in the range of 75 to 100 volts is applied between the electrode (5, 50) and the target (3) so that the electrode (5, 50) has a higher potential than that of the target (3) while the film is formed by laser ablation. A laser ablation process as claimed in Claim 1, characterized in that substrate temperature is selected in the range of 400 to 650°C. A laser ablation process as claimed in Claim 1 or 2, characterized in that the compound oxide thin film is formed of a high-T c , high critical temperature, oxide superconductor. A laser ablation process is claimed in Claim 3, characterized in that the compound oxide thin film is formed of a high-T c copper-oxide type compound oxide superconductor. A laser ablation process as claimed in Claim 4, characterized in that the compound oxide thin film is formed of an oxide superconductor material selected from the group consisting of a Y-Ba-Cu-O type compound oxide superconductor material, a Bi-Sr-Ca-Cu-O type compound oxide superconductor material, and a Tl-Ba-Ca-Cu-O type compound oxide superconductor material. A laser ablation process as claimed in anyone of Claims 1 to 5, characterized in that the substrate is formed of a material selected from the group consisting of a MgO (100) substrate, a SrTiO 3 (100) substrate and a yttrium stabilized zirconia (YSZ) substrate. A laser ablation process as claimed in anyone of Claims 1 to 6, characterized in that gas pressure during laser ablation is selected in the range of 1.333 to 10.664 mPa (100 to 800 mTorr). A laser ablation process as claimed in anyone of Claims 1 to 7, characterized in that laser power density of the laser-beam which is exposed to the target (3) is selected in the range of 0.5 to 5.0 Joule/ cm 2 . A laser ablation process as claimed in Claims 8, characterized in that laser power density of the laser-beam which is exposed to the target (3) is 0.7 Joule/ cm 2 . A laser ablation process as claimed in anyone of Claims 1 to 9, characterized in that the shortest distance between the substrate (1) and the target (3) is selected in a range of 30 to 100 mm. An apparatus for a laser ablation process for preparing a compound oxide thin film comprising a vacuum chamber (6) which has a gas inlet (9), a gas outlet (10) and a window (6a) which is transparent for laser-beam which is oscillated by a laser light source (7), a substrate holder (2) on which a substrate (1) is secured, a target holder (4) on which a target (3) is secured in parallel with the substrate (1) in the vacuum chamber (6) and an electrode (5, 50) between the substrate (1) and the target (3) and a bias source (5a) of which the anode is connected to the electrode (5, 50) and the cathode is connected to the target (3) so that a bias voltage can be applied between the electrode (5, 50) and the target (3), characterized in that the electrode (5, 50) is formed of a net of Pt, Au or an alloy which includes either Pt or Au, shaped cylindrical or plane, and arranged at a shortest distance selected in a range of 1 to 20 mm from the substrate (1).

Inventors: FUJIMORI NAOJI, NAGAISHI TATSUOKI, OTA NOBUHIRO, FUJIMORI, NAOJI, NAGAISHI,TATSUOKI, OTA, NOBUHIRO, FUJIMORI, NAOJI, C/O ITAMI WORKS OF SUMITOMO, Nagaishi,Tatsuoki, c/o Itami Works of Sumitomo, OTA, NOBUHIRO, C/O ITAMI WORKS OF SUMITOMO
Applicants: SUMITOMO ELECTRIC INDUSTRIES, SUMITOMO ELECTRIC INDUSTRIES, LTD.
Application year: 1992
Main classification: H01L39
IPC codes: H01L39, H01B12, C23C14, C30B29