Semiconductor device

Abstract: A MOSFET (11) constituting a flip-flop circuit and a MOSFET (12) for control of reading and writing data out of and into a memory cell are formed on a semiconductor (21). The gate electrode (14) of the first MOSFET (11) and the gate electrode (15) of the second MOSFET (12) are formed by layers of different levels. The gate electrodes (14) and (15) has an overlapped portion R. The first and second MOSFETs are arranged symmetrically with respect to a certain point P. By virtue of the above structure, the degree of integration of a static RAM is enhanced.

Description: This invention relates to a semiconductor device having a flip-flop circuit used as a memory cell in a static RAM. A conventional flip-flop circuit used as a memory cell in a static RAM has a structure as shown in Fig. 1. In Fig. 1, reference numeral 1 denotes a MOSFET constituting the flip-flop circuit, reference numeral 2 a MOSFET for control of reading data out of the memory cell and of writing data into the same, reference numeral 3 a load resistor, reference numeral 4 a word line, and reference numeral 5 a bit line. The static RAM, having a pattern as shown in Fig. 2, and being formed on a semiconductor substrate, represents an "in-house" development. In Fig. 2, reference numeral 6 designates an element region in which the MOSFETs 1 and 2 are formed, reference numeral 7 the gate electrode of the MOSFET 1, and reference numeral 8 the gate electrode of the MOSFET 2. In the pattern of Fig. 2, the gate electrode 7 of the MOSFET 1 and the gate electrode 8 of the MOSFET 2 are formed by films of the same level. In other words, the gate electrodes 7 and 8 are simultaneously formed by patterning a single silicon layer. Thus, separation regions S must be formed between the electrodes 7 and 8 to separate them from each other. This is disadvantageous to increase the degree of integration of elements. Further, in the above pattern, the gate oxide films of the MOSFETs 1 and 2 are formed simultaneously. That is, the gate oxide films have the same thicknesses. Accordingly, the ratio of the driving force of the MOSFET 1 to that of the MOSFET 2 is determined mainly by the channel lengths and widths of the MOSFETs. To increase the ratio of the driving force, the channel width of the MOSFET 1 must be larger than that of the MOSFET 2. Therefore, the ratio of the area of the MOSFET 1 to the overall area of the substrate surface must be large, which is disadvantageous to high integration. From US 4 951 112 a semiconductor memory device having a flip-flop circuit used as a memory cell in a static RAM is known, having a transfer gate for control of reading and writing data out of and into the memory cell. The circuit comprises a first MOSFET having a gate electrode and constituting part of the flip-flop circuit, the gate electrode being formed by a layer of a first level. The circuit furthermore comprises a second MOSFET having a gate electrode and constituting the transfer gate, the gate electrode being formed by a layer of a second level different from the first level, the gate electrodes of the first and second MOSFETs being overlapped with each other (see preamble of claim 1). It is the object of the invention to enhance the degree of integration of a static RAM by devising the locations of the gate electrodes of a MOSFET constituting a flip-flop circuit and of a control MOSFET. This object is solved as defined in claim 1. To attain the above object, the semiconductor device of the invention has a flip-flop circuit used as a memory cell in a static RAM, and a transfer gate for control of reading and writing data out of and into the memory cell, respectively. The flip-flop circuit includes a first MOSFET. The gate electrode of the first MOSFET is formed by a layer of a first level. The transfer gate includes a second MOSFET. The gate electrode of the second MOSFET is formed by a layer of a second level different from the first level. As can be viewed from the surface of a substrate on which the semiconductor device is formed, the gate electrodes of the first and second MOSFETs are overlapped with each other. Further, the gate insulating film of the first MOSFET has a thickness different from that of the second MOSFET, and the ratio of the effective gate capacity of the first MOSFET to that of the second MOSFET is determined by the ratio of the thickness of the gate insulating film of the first MOSFET to that of the gate insulating film of the second MOSFET. This invention can be more fully understood from the following detailed description when taken in conjunction with the accompanying drawings, in which: Fig. 1 is a circuit diagram showing a memory cell in a static RAM; Fig. 2 is a plan view showing an "in-house" development of a semi-conductor device; Fig. 3 is a plan view showing a semiconductor device according to the invention; and Figs. 4A to 4G are views, useful in explaining how the semiconductor device of Fig. 3 is produced. An embodiment of the invention will be explained with reference to the accompanying drawings. Fig. 3 shows a semiconductor device according to an embodiment of the invention. In Fig. 3, reference numeral 11 designates a MOSFET constituting the flip-flop circuit, reference numeral 12 a MOSFET for control of reading data out of a memory cell and of writing data into the same, reference numeral 13 an element region, reference numeral 14 the gate electrode of the MOSFET 11, and reference numeral 5 the gate electrode of the MOSFET 12. The semiconductor device of the invention is characterized in that the gate electrodes 14 and 15 are formed by films of different levels. That is, as is indicated by regions R in Fig. 3, the electrodes 14 and 15 are overlapped with each other. Thus, the invention does not need such a separation region as is employed in the conventional device. Further, as will be referred to in a manufacturing process explained later, the gate insulation films of the MOSFETs 11 and 12 can have different thicknesses, and hence the ratio of the driving force can be adjusted also by the gate insulation films. If the MOSFETs 11 and 12 are located symmetrically with respect to a point P, the symmetry of the flip-flop circuit is enchanced, and the degree of integration of the static RAM be increased. Figs. 4A to 4G are cross sectional views, showing steps in a method of manufacturing the semiconductor device of the invention, and taken along line I - I' or line J - J' of Fig. 3 through the steps. First, as is shown in Fig. 4A, a silicon oxide film (SiO 2 ) having a thickness of about 500Å is formed on a p-type silicon monocrystal substrate 21 by hydrogen burning oxidation at a temperature of 950°C. A silicon nitride film (SiN) having a thickness of about 1500Å is formed on the silicon oxide film. Then, a resist film is formed on the silicon nitride film by lithography, and part of the silicon nitride film is etched by chemical vapor isotropic etching. Thereafter, an element-separating oxide film (SiO 2 ) 22 having a thickness of about 8000Å are formed by hydrogen burning oxidation at a temperature of 1000°C in those regions of the substrate 21 in which the silicon nitride film is not formed. As a result, element regions and separation regions are formed in the substrate 21. Then, as is shown in Fig. 4B, the silicon nitride film is completely removed by chemical vapor isotropic etching. Further, those portions of the silicon oxide film which are formed in the element regions are removed using NH 4 F solution. Thereafter, a silicon oxide film (SiO 2 ) 23 having a thickness of about 160A is formed on the substrate 21 by dry oxygen oxidation at a temperature of 900°C. Part of the silicon oxide film 23 is etched using lithography and NH 4 F solution, thereby forming a contact hole 24. As is shown in Fig. 4C, a polysilicon film 25 having a thickness of about 2000Å is formed on the entire surface of the substrate 21 by chemical vapor deposition. Then, the resultant is subjected to heat treatment for 30 minutes in the atmosphere of POCℓ 3 of 900°C. As a result, the polysilicon film 25 is doped with an impurity (phosphor), and the resistance of the film is reduced. Simultaneously, the impurity is diffused from the film 25 into the substrate 21, thereby forming a diffusion layer 26 in the surface of the substrate 21. A low-resistance film 27 having a thickness of about 2000Å and made of e.g. a metal having a high fusing point (Mo, MoSi X , W, WSi X , Ti, TiSi X , etc.) is formed on the polysilicon film 25 by sputtering. Thereafter, as is shown in Fig. 4D, the polysilicon film 25 and low-resistance film 27 are patterned by aelotropic etching and lithography technology, thus forming the gate electrode of a MOSFET constituting a flip-flop circuit, and wiring of the flip-flop circuit. That part of the silicon oxide film 23 which is exposed on the substrate 21 is removed using NH 4 F solution. As is shown in Fig. 4E, a silicon oxide film (SiO 2 ) 28 having a thickness of about 250Å is formed on the substrate 21, polysilicon film 25, and low-resistance film 27 by dry oxygen oxidation at a temperature of 900°C. As is shown in Fig. 4F, a polysilicon film 29 having a thickness of about 2000Å is formed on the overall surface of the substrate 21 by chemical vapor deposition. Then, the resultant is subjected to heat treatment for 30 minutes in the atmosphere of POCl 3 of 900°C. As a result, the polysilicon film 29 is doped with an impurity (phosphor), and the resistance of the film is reduced. A low-resistance film 30 having a thickness of about 2000Å and made of e.g. a metal having a high fusing point (Mo, MoSi X , W, WSi X , Ti, TiSi X , etc.) is formed on the polysilicon film 29 by sputtering. Thereafter, as is shown in Fig. 4G, the polysilicon film 29 and low-resistance film 30 are patterned by aelotropic etching and lithography technology, thus forming the gate electrode and signal wiring of the MOSFET for control of reading and writing memory cell data. The aelotropic etching is performed when the ratio of an etched portion of the silicon oxide film 28 or polysilicon film 29 to a non-etched portion of the same is large. Thereafter, approx. 5 × 10 15 cm -2 of As ions are injected into the substrate 21 by applying an acceleration voltage of about 60 keV thereto, with the gate electrode and signal wiring of the MOSFET used as a mask. Then, a diffusion layer (serving as a source or drain) 31 is formed in the substrate 21 by activating the injected As ions with heat. Though the process onward is not shown, an interlayer insulating film A is formed on the overall surface of the substrate, then forming a contact hole in a predetermined portion of the film A, and forming a signal wire layer on the interlayer insulating film A. Further, an interlayer insulating film B is formed on the overall surface of the resultant, and then flattened. Thereafter, a contact hole is formed in the film B, and a metal wiring layer (made of e.g. an Aℓ-Si alloy) is provided thereon.

Claims: A semiconductor device having a flip-flop circuit used as a memory cell in a static RAM, and a transfer gate for control of reading and writing data out of and into the memory cell, respectively, wherein: the flip-flop circuit having a first MOSFET (11) with a gate electrode (14) having first and second end portions, the gate electrode being formed by a layer of a first level (25, 27); the transfer gate having a second MOSFET (12) with a gate electrode (15) formed by a layer of a second level (29, 30) different from the first level, one of the first and second end portions (R) of the gate electrode of the first MOSFET being overlapped with the gate electrode of the second MOSFET; the flip-flop circuit having a third MOSFET (11) with a gate electrode (14) with first and second end portions, the gate electrode being formed by a layer of the first level (25, 27); the transfer gate having a fourth MOSFET (12) with a gate electrode (15) formed by a layer of the second level (29, 30), one of the first and second end portions (R) of the gate electrode of the third MOSFET being overlapped with the gate electrode of the fourth MOSFET; the first, second, third and fourth MOSFETs each having a diffusion layer (13); the gate electrode of said first MOSFET and the gate electrode of said third MOSFET are arranged parallel to each other, and the gate electrode of said second MOSFET and the gate electrode of said fourth MOSFET are arranged parallel to each other; characterized in that the other end portion of the gate electrode of the first MOSFET being connected to diffusion layers of the third and fourth MOSFETs, and the other end portion of the gate electrode of the third MOSFET being connected to diffusion layers of the first and second MOSFETs; the gate electrodes of said first and third MOSFETs are arranged perpendicular to the gate electrodes of MOSFETs of said second and fourth MOSFETs. The semiconductor device according to claim 1, wherein a gate insulating film of the first MOSFET has a thickness different from that of the second MOSFET, and the ratio of the gate capacitance of the first MOSFET to that of the second MOSFET is determined by the ratio of the thickness of the gate insulating film of the first MOSFET to that of a gate insulating film of the second MOSFET. The semiconductor device according to claim 2, wherein the first MOSFET has a unit-area gate capacitance larger than the second MOSFET. The semiconductor device according to claim 1, wherein the gate electrode of the first MOSFET is formed by one of a laminated film consisting of a polysilicon film and a high-fusing-point metal film, and a laminated film consisting of a polysilicon film and a high-fusing-point metal silicide film. The semiconductor device according to claim 1, wherein the gate electrode of the second MOSFET is formed by one of a laminated film consisting of a polysilicon film and a high-fusing-point metal film, and a laminated film consisting of a polysilicon film and a high-fusing-point metal silicide film. The semiconductor device according to claim 1, wherein the first to fourth MOSFETs are arranged point-symmetrically.

Inventors: NAKAYAMA TAKEO, NAKAYAMA, TAKEO, Nakayama, Takeo, c/o Intellectual Property Div.
Applicants: TOSHIBA KK, KABUSHIKI KAISHA TOSHIBA
Application year: 1992
Main classification: G11C11
IPC codes: H01L27, H01L21