Charged particle beam exposure system and charged particle beam exposure method

Abstract: A charged particle beam exposure system is directed to an exposure process of an electron beam for sequentially scanning an electron beam employing a blanking aperture array including a plurality of blanking apertures. The system facilitates re-focusing for compensation of focus error due to Coulumb effect and makes wiring the blanking aperture array easier. The system further allows exposure without an irradiation gap. The blanking aperture array 6 is formed with a plurality of said blanking apertures 62 arranged in a two-dimensional configuration. A control system 24 controls the blanking aperture array 62 to set the blanking aperture to the ON state where the charged particle beams pass through the blanking aperture and reach the object 19 to be exposed or the OFF state where the charged particle beams cannot reach the object 19 to be exposed. The other control system of the control means performs a control so that a plurality of said charged particle beams that have passed through different blanking apertures of said blanking aperture array overlaps and is irradiated a plurality of times onto the specified position or the peripheral position in the vicinity of the specified position of the object to be exposed to the charged particle beams.

Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for exposing a charged particle beam to an object according to the preamble of claim 1. Moreover, the present invention relates also to a charged particile beam exposure system for carrying out the inventive method according to the preamble of claim 9. 2. Description of the Related Art From EP-A-0 404 608 a blanking aperture array, a method for producing the blanking aperture array, a charged particle beam exposure apparatus and also a charged particle beam exposure method is known. This known method comprises the steps of generating a charged particle beam for generating a base charged particle beam; a dividing step for dividing said base charged particle beam into a plurality of charged particle beams which have same beam profiles and are arranged on a plurality of parallel extending planes in a two-dimensional form, each of said planes including a group of equidistant beams so that columns of beams are formed, said beams being arranged within said planes such that also rows of equidistant beams are formed; a pattern generating step for forming a predetermined radiation pattern by independently setting said plurality of charged particle beams to be respectively ON and OFF; in the ON state, where the charged particle beams reach the object to be exposed, and in the OFF state, where the charged particle beams cannot reach the object to be exposed, and an irradiation step for irradiating a predetermined position of said object with said radiation pattern. Lately, because of their increasing importance ICs have been expected to advance in terms of integration density and function as core technology for technological progress of industrial fields including computers, mechanical control, communications, etc. ICs have reached a four-fold level of high integration within the last three or four years. For example, the integration density of the DRAM has increased from 1M through to 4M, 16M, 64M, 256M and 1G. Said high integration development has depended solely on the advancement of precision fabrication technology, particularly the advancement of optical technology that allows precision operations in 0.5 µm units. However, the precision limit of optical technology is approximately 0.3 µm and it is becoming difficult to maintain a precision of 0.10 µm in windowing for contact holes and alignment with a pattern of a lower layer. Since a pellicle cannot be applied to a mask in the case of X-ray exposure and a defect-free guarantee is difficult, X-ray exposure cannot be used in the fabrication of LSIs that are required to provide high reliability. Though, in charged particle beam exposure, precision operations of 0.10 µm or under can be achieved with alignment accuracy of 0.05 µm, and it has been considered that charged particle beam exposure could not be used for volume production of LSIs because of low throughput. In this case, a one-line configurated pattern exposure system has been assumed for precision pattern exposure with at most only one Gaussian beam or variable square beam. The above assumption has been determined in view of the productivity of the existing commercial systems, not based on the results of checking physical and technological bottlenecks and clarification of causes as to why the said throughput could not be increased or consideration as to how the throughput could be increased. Lately, however, the inventions of a block exposure system and a blanking aperture array system by the inventor of the present invention and others have made it possible to expect a throughput of approximately 1 cm 2 /sec. This exposure system is so advantageous that other lithographic means cannot compare in terms of precision, alignment accuracy, quick turnaround, reliability and advancement of softwares. The charged particle beam exposure system that enables the manufacturing of nano-lithographic LSIs such as 1 to 4 GBIT memories, is considered prospective lithography system. The most popular type of charged particle beam exposure system is the point beam raster scan exposure system. However, in this system, only one beam is used and the throughput is extremely low and therefore the exposure of wafers is impossible in the volume production level. On the contrary, in the case of the variable square beam system, a limited size of square can be formed by one shot and therefore a satisfactory throughput can be obtained with a rough pattern; the smallest pattern of which is approximately 2 µm. Accordingly, this system can be used for direct exposure production of small lots of products. However, LSIs of high pattern density cannot overcome the restriction of a one-writing pattern and cannot avoid an extremely low throughput. As a supplementary system for the above, a system for transferring a repetitive memory pattern as a contraction image of charged particle beams passing through a silicon stencil mask is referred to as the block exposure system. This block exposure system allows volume production of memory chips of 256M and 1G by repeatedly irradiating a pattern, which is often used for the memory at a high repetition rate. However, the block exposure system has the vital defect that the throughput for a random pattern is extremely low as in case of the variable square beam. Most gate arrays and micro computers are often based on random patterns. As a method for high speed exposure of such random patterns, a method has been proposed using line beams with the blanking aperture array. Figure 14 shows an example of a configuration of the prior art blanking aperture array, and this blanking aperture array 6 is provided with a row of openings 62 that are a plural number of apertures arranged in a line. An ON or OFF signal from the beam ON/OFF signal generator 33 is entered independently into the electrode 61 provided at an inside surface of each opening 62 through circuit lines ℓ 1 , ℓ 2 , ... ℓ n and a constant voltage (for example, a ground potential) is applied to the electrode 63 provided at the other inside surface of opening 62 through a common line. Thus, a plurality of beams passing through the openings 62 are arranged in a line and these blanking apertures 62 are ON/OFF controlled by an appropriate control means. In other words, the system is adapted so that the charged particle beams that have passed through the blanking apertures 62, into which the ON signal is entered, reach the specified point on the surface of object to be exposed and the specified point is exposed and the charged particle beams that have passed through the blanking apertures 62 into which the OFF signal is entered, is interrupted by an appropriate shield plate and prevented from reaching the surface of object to be exposed. Then a specified pattern is exposed as if it is scraped with a brush while scanning a plurality of charged particle beams obtained by the above described ON/OFF control. For volume production by direct exposure of wafers, it is necessary to expose a 1 cm 2 segment of wafer within one or, at longest, two seconds. If the throughput is determined as described above, the second problem is a sensitivity of resists. Electrons are particles and the number of electrons that are incident into a unit area within a unit time varies in terms of the Poisson's distribution and therefore the resolution is basically in inverse proportion to a square root of the sensitivity. Accordingly, if the smallest pattern is 0.2 µm, a resist with the sensitivity of 5 - 10 µC/cm 2 is generally required. A high sensitivity resist has only a low resolution and the system for which implementation of high sensitivity is excessively expected cannot be used in actual volume production of LSIs. If the throughput of 1 cm 2 /sec is a target value for the resist sensitivity of 5 - 10 µC/cm 2 , the required overall current is 5 - 10 µA. Another beam size is assumed as 0.05 µm□ on the surface of a specimen. The limit of the thermal electron gun of LaB 6 is a current density of 250 A/cm 2 to be obtained using a lens of an extremely small spherical aberration and chromatic aberration factor. Accordingly, the current density of 0.05 µm□ is 250 A/cm 2 and therefore the current value of one beam is 250 × (0.05 × 10 -4 ) 2 = 6.25 nA. The overall current value of 1600 beams is 10 µA. The problems in the case of exposure of the specified pattern with the above described line beams (for example, 1600 line beams) using the blanking aperture array as shown in Figure 14 are as follows: (1) A coulombic interaction has been considered a physical bottleneck for the charged particle beams. This coulombic interaction is a phenomenon such that the beams become dim because of interactive repulsion of electrons. The main cause of this phenomenon is that the focal distance is extended because of interactive repulsion of charged particle beams in proportion to the current value of overall electron flow in the lens near the surface of specimen (in other words, in proportion to the number of charged particle beams in the ON state) and the focal point deviates downward from the specimen surface (that is, the surface of wafer 19) as shown in Figure 7 (B). In Figure 7 (B), numeral 8 denotes the charged particle beam in the ON state and numerals 12 and 17 denote the electron lens for focusing shown in Figure 12. The focal deviation due to such coulombic interaction scarcely takes place when the number of charged particle beams 8 in the ON state is small as shown in Figure 7 (A) but occurs when the number of charged particle beams 8 in the ON state is large (the maximum number of beams reaches, for example, 1600 as described above) as shown in Figure 7 (B).The focal deviation because of said coulombic interaction can be corrected by providing a small refocus coil (for example, approximately 4 mm in diameter) at a position near the peak of the magnetic field in the final stage lens or the preceding lens (that is, a position where the magnetic field is most intensified) and supplying a refocus current in proportion to the current value of all charged particle beams (that is, the number of charged particle beams that remain in the ON state at that time) to the refocus coil at the rate of, for example, 50 nsec (50 + 1 sec). In this case, the rate of approximately 50 nsec is the limit of the response speed of the amplifier (analog current-driven type amplifier) for supplying the specified refocus current to the refocus coil in accordance with the number of charged particle beams that remain in the ON state at that time.If the size of one beam is set to 0.05 µm□ and the scanning speed is set to 100 µm/5 µsec (that is, 0.05 µm/2.5 nsec) in the stage moving direction by using the line beams through the blanking aperture array as described above, the beam dwell time per 0.05 µm (one shot of irradiation beam) is 2.5 nsec. Since such line beams are scanned at a high speed, it is necessary to vary the refocus current (for example, approximately 1A, maximum) in steps (for example, 0A to 1A) within a time far shorter than 2.5 nsec, which is the beam dwell time at the above-described point at the boundary between the exposure of a completely written-out region and the partially exposed region. However, it is impossible to obtain said response speed even with the advancement of analog current-driven type amplifiers, which have been developed recently. Accordingly, as shown in, for example, Figure 15, if there is a pattern as a small projection (in other words, when the pattern B is exposed, only two beams of the line beams become ON as shown with black dots 10B and 11B in the pattern B) adjacent to a large written-out pattern A (in other words, when the pattern A is exposed, all beams arrayed in a line become ON as shown with black dots 1B, 2B ... nB in the pattern A) (the arrow mark in Figure 15 indicates the scanning direction of the line beams), it is difficult to supply a correct refocus signal as described above (for supplying a correct refocus signal, the current to the refocus coil should be made to rise from approximately 0A to, for example, lA within a far shorter time than, for example, 2.5 nsec but it is impossible as described above). If the number of line beams is increased in the charged particle beam exposure by one line beam as shown in Figure 14, the focal deviation due to the above described coulombic interaction cannot be corrected and therefore the precision pattern writing cannot be carried out for volume production. (2) Since the beam dwell time of 20 nsec is required for the resist sensitivity of 5 µC/cm 2 , a current density of 250 A/cm 2 is insufficient in the beam dwell time of 2.5 nsec described above. A current density of 2000 A/cm 2 is required to obtain the dwell time of 2.5 nsec and therefore general thermal electron guns and electron lenses cannot attain this level of current density. (3) An intermediate color cannot be represented with the conventional line beams and a pattern of dimensions as large as an integral multiple of the dimensions of a single beam cannot be formed. Though such pattern can be formed by plural times of movement of the stage or beam scanning, the throughput is extremely low and volume production cannot be carried out. (4) The amount of exposure with the conventional line beams cannot be reduced by a proximity effect correction. (5) If the conventional line beams are arranged to reduce the effect of the electric field of the openings adjacent to the blanking aperture array, the irradiation points become vacant and therefore the scanning of a plurality of line beams that are slightly deviated is repeated and the throughput will be reduced. In other words, the problems associated with a blanking aperture array that comprises the above described plurality of blanking apertures 62 arranged in a row can be summarized as described below. The exposure efficiency with the charged particle beams can be improved by using said blanking aperture array, whereas a resist that provides a higher resolution should be used in accordance with the degree of precision of a pattern to be exposed and therefore the exposure time becomes longer and the throughput is reduced. In said blanking aperture system, there is a problem that the lens system is affected by the total amount of charged particle beams that pass through the above described blanking apertures, the focal point deviates and the pattern is dimmed. When exposing, for example, a pattern as shown in Figure 15, there is a problem that the total amount of charged particle beams passing through the blanking aperture array substantially varies in the exposure of the B row pattern after exposure of the A row pattern; the focal distance of the charged particle beam exposure system deviates significantly and therefore a considerably large current is required and it takes a certain period of time for correction. For this reason, it is necessary to provide a special control adjustment circuit. In addition, in said blanking aperture system, the exposure should be carried out through the blanking apertures that are arranged as close to each other as possible to prevent such defects as deformation or discontinuity of the pattern or the like. However, the charged particle beams have a fixed intensity distribution as described above and therefore there is the so-called proximity effect that adjacent charged particle beams interfere with each other and the pattern is exposed beyond the predetermined amount of irradiation. For example, it is necessary to adjust the amount of irradiation of the charged particle beams at the center and both ends of the blanking aperture array. However, such adjustment has been difficult in the conventional blanking aperture array. In some cases, it is necessary to vary the amount of irradiation on part or all of the pattern, depending on the shape of the pattern or the relative position of the pattern to other patterns but such variation cannot be implemented by the conventional blanking aperture array. Some examples of two-dimensional arrangement of the groups of blanking apertures in the above described blanking aperture array unit have been known to solve the above problems. In the blanking aperture array unit provided with the blanking apertures that are two-dimensionally arranged as described above, all charged particle beams forming the specified pattern passing through the blanking aperture array unit are simultaneously irradiated onto the specified position-of an object to be exposed to carry out an exposure process and subsequently all charged particle beams formed in the same or different pattern are simultaneously irradiated onto an adjacent object to be exposed to carry out the exposure processing. If the total amount of charged particle beams passing through the blanking apertures of the above described blanking aperture array unit largely differs with each pattern, a refocusing problem as described above occurs and the proximity effect problem is not resolved and there is no possibility of varying the amount of irradiation onto part of the specified pattern. And further, a high speed pattern forming method is disclosed by US-A-4153843 in which a blanking aperture array provided with a plurality of blanking apertures arranged in two dimensional form is used and thus a plurality of charged particle electron beams are radiated on a surface of a sample to be exposed to the beam to form a predetermined pattern thereon and wherein a total amount of radiation value at a certain addressed position of the sample to which a respective charged particle electron beam is to be exposed. In the method disclosed in the USP 4153843, as shown in Fig. 20, each one of the charged particle electron beams formed by each one of the apertures A, B, and C forming a first aperture line arranged parallel to a scanning direction Y of the charged particle electron beams radiates each one of addressed positions of the sample forming one line 1 arranged parallel to the scanning direction Y of the charged particle electron beams and each one of the charged particle electron beams formed by each one of the apertures B, E, and H forming a second aperture line arranged parallel to a scanning direction Y thereof, radiates each one of addressed positions of the sample forming another line 6 arranged parallel to the scanning direction Y and while each one of the charged particle electron beams formed by each one of the apertures C, F, and I forming a third aperture line arranged parallel to a scanning direction Y thereof, radiates each one of addressed positions of the sample forming another line 11 arranged parallel to the scanning direction Y. Note, that the charged particle electron beams formed by apertures forming respective lines radiate addressed positions formed on any one of the lines on the sample, and each line is separated a predetermined space from each other. Accordingly, the spaced addressed positions are successively radiated by each one of the charged particle electron beams formed by each one of the aperture lines formed in the aperture array and thereby all addressed positions are ultimately fully exposed; this method is generally called an interleave method. And thus, the charged particle electron beams formed by the aperture A exposes sequentially continuously arranged addressed positions to form in turn a line on the samples, (1, a), (1, b), (1, c) ... (1, 1), (2, 1), (2, k), ... (2, a), (3, a), (3, b), ... (3, 1). On the other hand, the charged particle electron beams formed by the aperture B exposes sequentially continuously arranged addressed positions to form in turn a line on the samples, (6, a), (6, b), (6, c) ... (6, 1), (7, 1), (7, k), ... (7, a), (8, a), (8, b), ... (8, 1). Further, the charged particle electron beams formed by the aperture C exposes sequentially continuously arranged addressed positions to form in turn a line on the samples (11, a), (11, b), (11, c) ... (11, 1), (12, 1), (12, k), ... (12, a), (13, a), (13, b), ... (13, 1). The characteristic feature of the conventional technology is such that a plurality of addressed positions formed on the sample, each of them being separated a predetermined distance from each other, are simultaneously and respectively exposed to different charged particle electron beams in a predetermined exposed region. In the conventional technology, the charged particle electron beams formed by the apertures D and G in the first apertures line formed by the apertures A, D, and G expose the same addressed position to which the charged particle electron beam formed by the aperture A exposes successively with a predetermined time difference. Therefore, in the embodiment as shown in Fig. 20, one of the addressed positions in the sample to be exposed will be exposed three times by the charged particle electron beam and therefore, a dose value of the same addressed position caused by the exposure of the beams can be optionally changed by changing the exposure number within 3 times. The conventional technology, however, discloses that each of the charged particle electron beams exposes each one of the addressed positions respectively and thus control of the beam is difficult. Therefore, a problem arises in that when the beam exposes all of a predetermined region to be exposed, a disconnected portion among the pattern to be formed, and which should naturally be connected, will appear because of a displacement of the beam from an addressed position to be correctly exposed. Accordingly, in the conventional technology, since the charged particle electron beams expose addressed positions separated from each other, an aberration and a reduction ratio of each one of the charged particle electron beams changes because of the difference in the distance from the optical axis and thus another technology is required to adjust the displacement. And further, in the conventional technology, since the controlling operation for controlling the deflection of the beam to realize the interleave operation becomes difficult the beam controlling circuit becomes complicated. Moreover, in the conventional technology, a predetermined time should be required from the time when the beams have exposed one addressed position to the time when the same beams expose another adjacent addressed position. Generally, a light sensitive layer formed at a predetermined addressed position is affected by another beam that exposes another addressed position next to the predetermined addressed position, and thus in the conventional technology, since the exposure time is different, the exposed condition of the sensitive layer of one addressed position will change as time elapses. Accordingly, it becomes difficult to maintain the light sensitive condition of the predetermined addressed position at the predetermined level and a uniform exposure operation cannot be expected. SUMMARY OF THE INVENTION It is therefore an object of the present invention, to provide a method and a system for solving the various above described problems in the exposure method by the conventional line beams, particularly a method and system for exposing a charged particle beam to an object capable of easily correcting the focal deviation of charged particle beams due to the above described coulombic interaction to allow the formation of a sharp pattern when any type of exposure pattern is used and the number of charged particle beams is increased and appropriately varies the amount of irradiation of charged particle beams for each pattern. According to the present invention, this object is solved with respect to the method for exposing a charged particle beam to an object by the features of the characterizing part of the claim 1. Improved embodiments of the inventive method result from the subclaims 2 to 8. With respect to the charged particle beam exposure system of the present invention, the above-mentioned object is solved by the features of the characterizing part of the claim 9. Improved embodiments of the inventive system result from the subclaims 10 to 19. In other words, in a method for exposing the charged particle beam in accordance with the present invention, a group of charged particle beams having a specified pattern that have passed a plurality of blanking apertures two-dimensionally arranged are not simultaneously irradiated onto the specified position of the object to be exposed unlike the prior art system and part of the specified pattern to which the specified position of the object is exposed is divided and irradiated a plurality of times. In addition, the charged particle beams to be irradiated onto the specified position of the object to be exposed are supplied through different blanking apertures, respectively. In view of the fact that according to the inventive method and system the focus states of the charged particle beams are adjusted according to a sum of ON state charged particle beams, the above described refocus problems will no more occur and the refocussing operation can be easily carried out in a short period of time. BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a diagram showing the basic configuration of the blanking aperture array used in the present invention; Figure 2 is a diagram showing another configuration of the blanking aperture array used in the present invention; Figure 3 is a diagram showing a further another configuration of the blanking aperture array used in the present invention; Figures 4 (A) and 4 (B) are respectively a diagram showing the relationship between an example of main deflection and sub-deflection of the charged particle beams and the direction of the blanking aperture stage of the blanking aperture array means in accordance with the present invention and Figure 4 (C) is a diagram showing the scanning waveforms of charged particle beams in the sub-deflection direction (Y direction); Figures 5(A) and 5(B) are diagrams illustrating the principle of the exposure method in the charged particle beam exposure system in accordance with the present invention; Figures 6(A) to 6(C) are diagrams illustrating the principle of the exposure method in the charged particle beam exposure system in accordance with the present invention; Figures 7(A) to 7(C) are diagrams illustrating the function of the refocus; Figure 8 is a diagram illustrating the output current waveforms supplied to the refocus coil; Figures 9(A) and 9(B) are diagrams showing an example of a proximity effect correction by the exposure method in accordance with the present invention; Figures 10(A) and 10(B) are explanatory diagrams for forming an exposure pattern shifted by a smaller size than the beam size according to the exposure method of the present invention; Figures 11(A) to 11(D) are explanatory diagrams for exposing the stitch of the fields or the sub-fields by the exposure method of the present invention; Figure 12 is a diagram showing an example of the overall configuration of the charged particle beam exposure system in which the method in accordance with the present invention is to be embodied; Figure 13 is a circuit connection diagram of the electrical system to be connected to the sections of the apparatus shown in Figure 12; Figure 14 is a diagram showing an example of the configuration of the prior art blanking aperture array; Figure 15 is a diagram describing an exposure problem using the prior art blanking aperture array; Figures 16(A) to 16(C) are diagrams illustrating a practical example of another exposure method for the charged particle beam exposure system in accordance with the present invention; Figures 17(A) and 17(B) are diagrams illustrating an example of line connections of the prior art blanking aperture array; Figures 18(A) and 18(B) are diagrams illustrating an example of line connection pattern to the blanking electrodes in the blanking aperture array shown in Figure 1; Figure 19 is a diagram showing an example of connection of the constant voltage applying circuit to the blanking electrodes in the blanking aperture array shown in Figure 1; and Figure 20 shows a conventional exposure method. DESCRIPTION OF THE PREFERRED EMBODIMENTS The following describes a practical example of the charged particle beam exposure system in accordance with the present invention. Figure 12 is a diagram that exemplifies the overall configuration of the charged particle exposure system related to the present invention. In Figure 12, the electron gun 1 comprises a cathode 2 composed of LaB 6 and others, a grid 3 and an anode 4. Numerals 5, 7, 10, 12, 17 and 21 respectively denote electron lenses for convergence and a blanking aperture array 6 construction as described later is provided in the electron lens 7. Numeral 8 denotes the so-called ON beam, which passes through the blanking aperture to the electrode to which an ON signal is applied among the blanking apertures provided in the blanking aperture array 6 and is irradiated onto the specified point on the object (wafer surface) 19 to be exposed. Numeral 9 denotes the so-called OFF beam, which passes through the blanking aperture to the electrode to which an OFF signal is applied among the blanking apertures provided in the blanking aperture array 6 and is interrupted by an appropriate shielding means, for example, the shield plate 11 provided below the blanking aperture array and is not irradiated onto the surface of the object to be exposed. The above described refocus coil 13, which converges the charged particle beams to a specified size onto a specified position, is provided in the electron lens 12 immediately preceding the final stage in the lens system for focusing on the surface of the object to be exposed. Numerals 14 denote the main deflector (which is generally formed with a coil) and numerals 18 denote the sub deflector (which is generally formed with a static electrode); the charged particle beams (ON beams) 8 are deflected in a specified direction for main deflection and sub deflection, and are described in the following. Numerals 15 denote the dynamic focus, which corrects the position of the focal point in accordance with the deflecting position of the charged particle beams. In addition, numerals 16 denote the dynamic stig, which corrects the shape of charged particle beams irradiated onto the specimen (for example, correction for rounding the shape of the charged particle beams). Numerals 20 denote the stage for supporting the object to be exposed 19 and the movement of this stage is detected by the laser interferometer 22, and the detection signal of the laser interferometer is supplied to the scanning signal generator 32, described later. Specifically, the laser interferometer 22 reads the position of the stage 20 and feeds back its reading to the scanning signals of the charged particle beams, and the charged particle beams are deflected as much as the movement of the stage; thereby the charged particle beams can be irradiated onto a specified position on the specimen surface 19 even though the stage 20 moves. As a basic configuration, the charged particle beam exposure system in accordance with the present invention comprises a charged particle beam generating means 1, which generates a charged particle beam, a blanking aperture array 6, which has a plurality of blanking apertures 62, a stage means 20, which supports an object 19 to be exposed, an electromagnetic deflection means 14 and 18, which deflects the charged particle beams as much as specified to irradiate the charged particle beams at a specified position of the object to be exposed, lens means 5, 7, 10, 12, 17 and 21 for contracting the charged particle beams to a specified magnification for irradiating the charged particle beams in the specified size onto the specified position of the object 19 to be exposed, and a control means 23, which controls at least one of the above described control means as shown in Figure 13. The control means 23 comprises a central processing unit 30, a control system 24, which controls a blanking aperture array means 6 formed with a plurality of blanking apertures 62 provided in a two-dimensional arrangement and an electromagnetic deflection control means 25, which controls the charged particle beams to be deflected by a specified amount in a specified direction in order that the charged particle beams generated from the charged particle beam generating means pass through the blanking apertures and are deflected as specified-in a specified direction. The control system 24, which controls an ON/OFF state of the blanking apertures of the blanking aperture array means 6, is provided with a beam ON/OFF signal generating means 33, which is controlled with data read out from the memory 31, and the electromagnetic deflection control means 25 is provided with a scanning signal generating means 32, which is controlled with a signal output from the beam ON/OFF signal generating means 33 of the control system 24 to control the above described main deflector 14 in accordance with the data read out from the memory 31 and also control the sub deflector 18 through an adder 36. The control signal output from the scanning signal generating means is also supplied to the dynamic focus 15 and the dynamic stig 16. Numerals 34 denote the ON beam number detector, which is connected to the output side of the beam ON/OFF signal generator 33 and detects the number of charged particle beams that remain in the ON state at that time. Digital values in accordance with the number of detected charged particle beams are converted to the analog values by the D/A converter 37 and the specified refocus current is supplied to the refocus coil 13 through the amplifier (the above described analog current drive amplifier) 38. Numerals 35 denote the refocus flyback circuit connected to the output side of the beam ON/OFF signal generator 33 to supply a deflection signal in proportion to the number of the charged particle beams that remain in the ON state together with a scanning signal from the scanning signal generator 32 to the sub deflector 18 through the adder 36; thereby the deflection positional deviation (a lateral deviation as shown with a dot line in Figure 7 (C)) of the charged particle beams, when the refocus current is supplied, is compensated. An example of the basic configuration of the blanking aperture array 6 used in the present invention is shown in Figure 1. In the blanking aperture array 6 used in the present invention, a number of blanking apertures 62 are two-dimensionally arranged in order under the conditions as described below. Figure 1 (A) is a plan view showing an example of the basic configuration of the blanking aperture array means 6 used in the present invention, and a plurality of blanking apertures 62 of the blanking aperture array means 6 have the same area of aperture and preferably have the almost the same sectional profile. In addition, the plurality of blanking apertures 62 are arranged in an orthogonal matrix having a plurality of rows and a plurality of stages with equal clearance therebetween both in the vertical and in the horizontal direction. The stage (L) direction of the blanking apertures 62 of the blanking aperture array means 6 in the present invention is the direction the charged particle beams are deflected and scanned in the sub field, described later, by the sub deflector 18, that is, a direction that orthogonally intersects the moving direction of the stage 20, and the row (R) direction of the blanking apertures 62 is the direction the charged particle beams are deflected and scanned in the sub field, described later, by the sub deflector 18, that is, a direction that coincides with the moving direction of the stage 20. Though the clearance in the row direction of the blanking apertures 62 in the blanking aperture array means 6 according to the present embodiment, that is, the clearance rl between the blanking apertures of row R1 and those of row R2, is not specified, it should be set to prevent the charged particle beams that have passed through the blanking apertures 62 from excessively overlapping and result in an excessive proximity effect and deformation of the specified pattern or adjacent patterns from being discontinued when the object to be exposed is exposed to the charged particle beams to form the specified pattern. The overall width TS in the row direction of the blanking apertures in the blanking aperture array means 6 is preferably such that the clearance thereof and the number of rows of blanking apertures are set so that the overall width is at least equal to the width ws of the sub field the charged particle beams scan. In addition, the clearance in the stage direction of the blanking aperture array means 6 in the present embodiment is not limited and is less restricted than the clearance between the rows. It can be determined taking into account the scanning speed of the charged particle beams, the moving speed of the specified pattern in the blanking aperture array means 6, and the moving speed of the stage. The overall width TL of the stage direction in the blanking aperture array means 6 is also not limited. As described later, the number of stages is determined depending on the number of times of overlapping irradiation of the charged particle beams onto the specified position of the object to be exposed, and therefore the overall width TL should be such that it can include at least the number of stages thus determined. Figure 2 is a plan view showing the configuration of another embodiment of the blanking aperture array means 6 in accordance with the present invention. This embodiment has a configuration in which a plurality of blanking apertures 62 that form one stage L1 and a plurality of blanking apertures 62 that form the other adjacent stage L2 are provided in different arrangement phases in the row direction. In the embodiment shown in Figure 2, the blanking apertures 62 forming the first stage L1 and those forming the second stage L2 are provided in a zigzag arrangement. In other words, in Figure 2, each of the blanking apertures 62 has a square cross section, a side of which has the length S. As shown in Figure 2, there are arranged a plurality of aperture stage groups (8 groups, for example, as 1A, 1B; 2A, 2B; ...; 8A, 8B) each of which (comprising, for example, 1A and 1B) comprises the first aperture stage, for example, 1A (some of the apertures are indicated as 1A 1 , 1A 2 , 1A 3 , 1A 4 , 1A 5 , ... 1A n and the number of apertures is, for example, 64) arranged and deviating from one another as much as 2S (50 µm as an example, 0.1 µm in terms of dimensional conversion on the specimen) in a direction at right angles to the scanning direction (the vertical direction on the drawing) of the charged particle beams and the second aperture stage, for example, 1B (some of the apertures are indicated as 1B 1 , 1B 2 , 1B 3 , ... 1B n and the number of apertures is, for example, 64 the same as the number of apertures of the first aperture stage), which are arranged while being deviated by the specified distance from the first aperture stage 1A in the scanning direction of the charged particle beams (the vertical direction in the drawing) and by S (25 µm in the above case, or 0.05 µm in terms of dimensional conversion on the specimen) from the first aperture stage in a direction at right angles to the scanning direction of the charged particle beams. Accordingly, in the above case, the dimension a shown in Figure 2 (that is, for example, a deviation between the aperture stage 1B and the aperture stage 2B) is 100 µm (0.2 µm in terms of dimensional conversion on the object to be exposed), the dimension b is 800 µm (1.6 µm in terms of dimensional conversion on the object to be exposed) and the dimension c is 3200 µm (6.4 µm in terms of dimensional conversion on the object to be exposed). As described above, if the number of apertures of one aperture stage, for example, 1A is 64, the number of apertures of one aperture stage group (for example, comprising 1A and 1B) is 128 and the total number of apertures of all aperture stage groups is 128 × 8 = 1024. In the present embodiment, a plurality of blanking aperture stages provided in different arrangement phases are formed as a group and a plurality of groups are repeatedly formed. Figure 3 shows another embodiment of the blanking aperture array means 6 in accordance with the present invention. In this embodiment, a plurality of types of blanking aperture stages in different phase arrangements are used and the distance between blanking apertures 62 in one aperture stage is as large as an integral multiplication of the example shown in Figure 2. In this embodiment, assuming that the width of individual blanking apertures in the row direction is S and the number of a plurality of blanking aperture stages provided in a different arrangement phase is n, the distance L in the row direction of adjacent blanking apertures 62 in one blanking aperture stage is set to be nS or an approximate value nS. Figures 18(A), 18(B) and 19 are diagrams illustrating a configuration of the blanking electrodes in the blanking aperture array means 6 shown in Figures 1 to 3. All blanking apertures 62 of the blanking aperture array means 6 are respectively provided with an electrode means 60 that is set to the ON state when the charged particle beams generated by the charged particle beam generating means 1 pass through the blanking apertures 62 and reach the object 19 to be exposed or to the OFF state when the charged particle beams are deflected when passing through the blanking apertures 62 and prevented from reaching the object 19 to be exposed. The electrode means is adapted to be controlled so that the electrode means is selectively set to the ON state or the OFF state, depending on whether or not the specified voltage is applied by the blanking aperture array control unit 24. The electrode means 60 comprises two independent electrode parts 65 and 66 provided near two opposing faces of the blanking aperture and one electrode part 65 is connected to the blanking aperture array control unit 24, and the other electrode part 66 is grounded. In the embodiment of the blanking aperture array means 6 in accordance with the present invention, the control signal line 67 from the blanking aperture array control unit 24 is extended from both ends 70 and 71 in the stage direction of the blanking aperture array means 6 toward the inside of the hollow spaces formed between the rows of the blanking apertures, and the line 67 is connected to respective electrodes 65 of the blanking apertures. At the same time, the grounding part 68 is provided near the center of the blanking aperture array and the grounding wire 69 is connected from the grounding part 68 to the electrode 66 of each blanking aperture 62. The following describes a configuration example of line connection to the electrodes of the blanking aperture array means 6 according to the prior art and a problem associated with said line connection. In the prior art, as the wiring method for the variable voltage electrode 65 to be connected to the control means provided on the blanking apertures 62 and the constant voltage electrode 66 to be connected to the constant voltage power supply, such as a grounded power supply, a plurality of wires 67 for the variable voltage electrode and a plurality of wires 69 for the constant voltage electrode are arranged from the outer periphery of the blanking aperture array means 6 toward the inside so that they do not intersect each other as shown in Figure 17 (A). In the case of such wiring construction, however, the distance between adjacent blanking apertures 62 should be increased since the number of lines increases as the number of blanking apertures 62 increases but the size and distance of the blanking apertures cannot be excessively large. This is related to the size of the charged particle beam irradiation region on the blanking aperture array means 6, desired pattern rules, contraction percentage (optical system), relationship between the aperture and the distance between the blanking apertures (the charged particle beams that have passed through the apertures should be observed as if they are continued). On the contrary, a system has been proposed in which, as shown in Figure 17 (B), shift register elements SR are mounted on a plurality of regions J surrounded by the openings of the blanking apertures and a control voltage is applied while sending the signals to the shift register elements and selecting the opposing electrodes 65 and 66. (Refer to EP-A-0 404 608). However, in such a system, it takes a long time to select the opposing electrodes 65 and 66 by sequentially driving the shift register elements SR with clock pulses, and therefore the throughput deteriorates. ( In addition, the charged particle beams are also irradiated to the shift register elements SR and therefore a faulty operation is apt to occur resulting in a defective pattern. In the embodiment in accordance with the present invention, the method of line connection to the blanking apertures is improved as described below to eliminate the defects of the prior art method. As shown in Figures 18 and 19, the system employs a construction provided with the main line part 68 connected to the constant voltage power supply part in the charged particle beam passing region; a constant voltage applying wire 69 extended and branched to form the main line part 68 to each of surrounding blanking apertures and connected to the constant voltage electrode 66 of the blanking apertures, and the variable voltage applying wire 67 extended from the outer periphery of the charged particle beam passing region of the blanking aperture array means 6 and connected to the variable voltage applying electrode 65 of the blanking apertures 62. It is preferable that the variable voltage applying electrodes 65 of the opposing electrodes 60 provided on the blanking apertures 62 of the blanking aperture array means 6 in accordance with the present invention are arranged toward the outer periphery of the blanking aperture array means 6, and the constant voltage electrodes 66 are arranged in a direction where the main line part 68 of the blanking apertures is located. One constant voltage applying wire 69, which is integrated by using the above described line connection configuration, is branched at a point nearby the blanking apertures 62 and one of the branched lines is connected to one of the electrodes. Therefore, the number of wires passing through the space between the blanking apertures is reduced and the area of the wiring region is also reduced. In addition, in such a system, a signal can almost be simultaneously sent to the electrodes 65 and 66 provided on a plurality of blanking apertures 62, and therefore, the electrode is instantaneously selected and the throughput is improved. Since the elements are not formed in the charged particle beam irradiation region in the blanking aperture array means, a faulty operation does not occur. In addition, an intersection of the integrated constant voltage applying wire 69 and the variable voltage applying wire 67 is avoided and only one centralized part is satisfactory as a part to which a constant voltage is applied, and the number of connecting points between the drive circuit for sending the pattern signals and the blanking aperture array means 6 can be reduced. Since the constant voltage electrodes 66 of the blanking apertures 62 are arranged in a direction of the main line part 68 of the blanking apertures, the line connection passage for the constant voltage applying wire 69 and the constant voltage electrode 66 is shortened and an expansion of the wiring region is prevented. The following describes the variable voltage applying wire 67 to be connected to the variable voltage electrodes 65 of the blanking apertures in this embodiment. In the blanking aperture array means 6 in which there are 16 stages, each of which is formed by a plurality of blanking apertures 62 as shown in Figure 19 where the array of the blanking apertures of odd-numbered stages is deviated by one pitch from the array of the blanking apertures of even-numbered stages in the array configuration, a set of eight variable voltage applying wires 67 are connected toward the inside from the edge part 70 of one blanking aperture array means 6 between the blanking apertures lAl and 1A2 of the first stage. Actually, the wires can be directly connected from the above described edge part to the variable voltage electrodes 65 of the blanking apertures 1A1 and 1A2 and therefore seven wires can be inserted toward the inside between the blanking apertures 1A1 and 1A2. Branching and integration of such sets of wires are repeated for the following stages up to the final stage, that is, the eighth stage, while the number of wires is reduced in each stage as described above. The wiring is the same as said wiring structure and is executed from the other edge part 71 of the blanking aperture array means 6. When connecting the specified wires to the electrodes 60 of the blanking apertures 62 in the blanking aperture array means 6 according to the present invention, the number of blanking apertures 62 is increased and the wiring spaces are limited in the array configuration of the blanking apertures as shown in Figure 1, and therefore, the number of blanking apertures 62 is limited. In the case of the blanking aperture array configurations as shown in Figures 2 and 3, substantially large spaces can be secured among blanking apertures 62 and an increased number of blanking apertures can be sufficiently accommodated. In addition, in the embodiment related to the present invention, half of the total number of wires required for connection are connected in a manner as shown in the drawing from both ends of the blanking aperture array means 6 in the stage direction, that is, the end parts 70 and 71 of the blanking aperture array means 6 as shown in Figure 18, and therefore, the number of wires that are inserted from one end part can be reduced, larger spaces can be reserved and the wiring design will be provided an allowance. In Figures 18(A) and 18(B), the electrodes 60 provided at the blanking apertures 62 are turned on or off independently by the beam ON/OFF signal generator 33 of the blanking aperture array control unit 24 and therefore the wiring to the electrodes should be formed independent of other wiring. In Figures 18(A) and 18(B), the electrodes 65 are directly connected to the blanking aperture array control units 24, that is, the wiring to the blanking electrodes are shown with dot lines. Specifically, in Figure 18 (A), for example, symbol ℓ 1 denotes the wiring to the blanking electrode of the blanking aperture 1A, in the above described aperture stage 1A and similarly, for example, symbols ℓ 2 , ℓ 3 and ℓ 4 are respectively the wiring to the blanking electrodes of the blanking aperture 2A 1 in the aperture stage 2A, the aperture 3A 1 in the aperture stage 3A and the aperture 4A 1 in the aperture row 4A. A solid line 68 indicates a common wire 68 for supplying a specified constant voltage, for example, the ground (GND) to the electrodes 66 provided on the other internal surfaces of the blanking apertures 62. Figure 18 (A) shows the wiring pattern to the electrodes provided at the apertures that belong to the aperture stages 1A and 4B and Figure 18 (B) shows the wiring pattern to the electrodes provided at the apertures that belong to the aperture stages 5A to 8B. Accordingly, in the actual blanking aperture array means 6, upper portion of Figure 18 (B) connects to the bottom portion of Figure 18 (A) as shown in Figure 19. Figures 4(A) to 4(C) show an example of main deflection and sub deflection of the charged particle beams, which are irradiated onto the object to be exposed, by the scanning signals supplied to the main deflector 14 and the sub deflector 18, and the Y direction is the stage moving direction. More specifically, as shown in Figure 4 (A), the sub field region SF 1 , on the specimen with a width of, for example, 5 µm in the X direction and a length of, for example, 100 µm in the Y direction is raster-scanned with line beams within 5 µsec in the arrow direction in the drawing and subsequently the adjacent sub field region SF 2 is raster-scanned at the same speed as above in the reverse direction (the arrow direction in the drawing). Thus, the sub field region with 100 µm width in the X direction and 100 µm length in the Y direction is raster-scanned within a time of 5 µsec × 20 = 100 µsec by sequentially raster-scanning adjacent sub fields SF 1 , SF 2 , SF 3 ... in the arrow direction in the drawing. The above operation is carried out according to the scanning signal from the sub deflector 18 (sub deflection). The line beams are moved to the sub field region SF 21 adjacent to the above sub field region according.to the scanning signal from the main deflector 14 (main deflection) and the sub field with 100 µm width in the X direction and 100 µm length in the Y direction is raster-scanned again within 100 µsec by sequentially raster-scanning the sub fields SF 21 , SF 22 , ... in the arrow direction in the drawing the same as the procedure described above. Subsequently, the field region F with a 2 mm scanning width in the X direction and a 100 µm length in the Y direction is raster-scanned within a time of 100 µsec × 20 = 20 msec by similarly repeating the main deflection operation. Since the field region with a 100 µm length in the Y direction is processed within a time of 2 msec, a field region with a 2 mm scanning width in the X direction and a length of 100 µm × 500 =50 mm in the Y direction is processed within one second. Therefore the moving speed of the stage 20 can be 50 mm/sec in the Y direction and the processed area per second is 2 mm × 50 mm = 1 cm 2 . Figure 4 (B) shows an array of line beams in the sub field (for example, SF 1 ) with a 5 µm width (one beam size is 0.05 µm□ and the beam is circular on the surface) and symbol A 1 denotes the beam that passes through an aperture of the first aperture stage (for example, 1A) and symbol A 2 is the beam that passes through an aperture of the second aperture stage (for example, 1B). Thus the sub field region with a 5 µm width is scanned with 100 line beams A 1 , A 2 , ... A 100 . The total sum of the apertures of the first aperture stage (for example, 1A) and those of the second aperture stage (for example, 1B) is 128 in the above sample. Accordingly, each line beams A 1L to A 14L and A 1R to A 14R are arrayed beyond the right and left boundaries of the sub field region (for example, SF 1 ). Accordingly, the length of 128 line beams is 6.4 µm. Figure 4 (C) is a diagram showing the scanning waveforms in the Y direction of the above sub deflection; the horizontal axis denotes the time elapsed, and the vertical axis denotes the positions of beams in the Y direction on the surface of the object to be exposed. In Figure 4 (C), 1 ○ denotes the position of the beam that has passed through the aperture stage 1A; 2 ○denotes the position of the beam that has passed through the aperture stage 1B; 3 ○ denotes the position of the beam that has passed through the aperture stage 2A, and the following numbers similarly denote the positions of the beams that have passed through the aperture stages. As shown in Figure 4 (C), the charged particle beams that have passed through the aperture stages move as far as 0.05 µm on the surface of the object to be exposed every 2.5 nsec and, after the lapse of 5 nsec, the charged particle beams that have passed through the following aperture stages come up to the same position on the surface of the object to be exposed. The following describes the principle of the exposure processing method of the object to be exposed by the charged particle beams in the charged particle beam exposure system in accordance with the present invention, referring to the drawings, Fig.5(A), Fig.5(B); Figs.6(A) to 6(C). Figure 5 (A) briefly shows the principal part of the charged particle beam exposure system in accordance with the present invention. Charged particle beams 52 emitted from the electron gun 1 pass through the groups of blanking apertures 62 of the blanking aperture array means 6 and are scanned by the electromagnetic deflection means 50 on the object to be exposed in the direction of arrow F. On the other hand, in the blanking aperture array means 6, a plurality of blanking apertures 62 are arranged in two dimensions as described above and individually ON/OFF controlled by the blanking aperture array control means 24. The specified pattern 55 is formed on the blanking aperture array means with the blanking apertures 62 which remain in the ON state according to the above described control and moved in the direction of arrow E according to the control of the blanking aperture array control means 24. In exposure processing of a pattern, as shown in Figure 6(A), by the blanking aperture array means 6 in which nine blanking apertures 62 as shown in Fig. 5(B) are two-dimensionally arranged in three vertical and horizontal rows (R1, R2 and R3) and three stages (L1, L2 and L3), only the blanking apertures 62 of the central row R2 of the extreme left stage L1 of the blanking aperture array means 6 are turned on at the first process, that is, timing T1 and all other blanking apertures are set to OFF as shown in Figure 6(A). Under this condition, the electromagnetic deflection means 50 including the main deflector 14 and the subdeflector 18 operates to deflect and irradiate the charged particle beams 52 onto the position B1 near the end part of the sub field 19s on the object 19 to be exposed. Therefore the charged particle beams 52 irradiate only the position P1 of the object 19 to be exposed. In the second process, that is, at timing T2, as shown in Figure 6(B), the pattern is moved slightly to the right, the blanking apertures of the central row R2 of the central stage L2 in the blanking aperture array means 6 are turned on, the blanking apertures of the rows R1 and R3 of the stage L1 are turned on and other blanking apertures are set to OFF. Under this condition, the electromagnetic deflection means 50 moves the charged particle beams 52 slightly to the left to the position B2 from the irradiating position B1 in the preceding process and the irradiation is executed at this position. Therefore the charged particle beams 52 that have passed through the blanking apertures (L2, R2) irradiate again the position P1 of the object 19 to be exposed onto which the charged particle beams are irradiated in the first process and two charged particle beams 52 that have passed through the blanking apertures (L1, R1) and (L1, R3) irradiate positions P2 and P3 of the object 19 to be exposed. In other words, in the present invention, the scanning direction and speed of the charged particle beams 52 and the moving direction and speed of the pattern in the blanking aperture array means 6 are adjusted taking into account the conditions such as the shape of the pattern, the distance between adjacent blanking apertures, etc. to operate all means at the specified timing and exposure by turning on the specified blanking apertures 62 of the blanking aperture array means when the charged particle beams reach a position to be irradiated of the object to be exposed. In addition, the above described control allows the irradiation of the charged particle beams 52 repeatedly at the same position of the object 19 to be exposed. In this embodiment, the specific position P1 of the object 19 to be exposed is irradiated two times with the charged particle beams, in this step. Moreover, the specific position P1 of the object 19 to be exposed is to be irradiated with the charged particle beams that have passed through blanking apertures different from the blanking apertures (L1, R2) and (L2, R2) in the blanking aperture array means 6. In the third process, that is, at the timing T3, the pattern moves again to the right, and the blanking apertures at the central row R2 of the extreme right stage L3, the blanking apertures at rows R1 and R3 of the central stage L2 and the blanking apertures at rows R1, R2 and R3 of the extreme left stage L1 are turned on as shown in Figure 6C. Under this condition, the electromagnetic means 50 moves the charged particle beams 52 slightly leftward from the irradiating position B2 in the preceding process to the position B3, whereby the irradiation is executed. Therefore, the charged particle beams 52 that have passed through the blanking apertures (L3, R2) are irradiated again onto the position P1 of the object 19 to be exposed; the position of which the charged particle beams were irradiated in the second process. Two charged particle beams 52 that have passed through the blanking apertures (L2, R1) and (L2, R3) are irradiated again onto positions P2 and P3 of the object 19 to be exposed; the position of which the charged particle beams were irradiated in the second process, and three charged particle beams 52 that have passed the blanking apertures (L1, R1), (L1, R2) and (L1, R3) are irradiated onto positions P4 to P6 of the object 19 to be exposed. In this embodiment, the specific position P1 of the object 19 to be exposed has received irradiation of charged particle beams three times and the specific positions P2 and P3 have received irradiation of charged particle beams two times in this step. Any type of pattern can be easily exposed by repeating such processes and all pixels of the pattern are exposed by a plurality of irradiations of the charged particle beams. Depending on the case, all pixels of the pattern need not be irradiated the same number of times and the number of irradiation times with charged particle beams for part of the pixels can be reduced. In the present invention, when the blanking aperture array means 6, which has different phases of blanking apertures as shown in Figures 2 and 3, is used, the above described principle also applies and therefore a straight line type pattern can be formed by irradiating the charged particle beams that pass through the blanking apertures of the differently phased stages onto the clearances of the blanking apertures of other stages. More specifically, if the blanking aperture array means 6 as shown, for example, in Figure 2 is used, a single straight line type pattern can be formed by exposing the clearance portion of a straight intermittently exposed part formed on the object 19 to be exposed by the blanking apertures 1A 1 , 1A 2 , 1A 3 ... of the stage 1A to the charged particle beams formed through the blanking apertures 1B 1 , 1B 2 , 1B 3 ... of the stage 1B. In this case, as described above, if the scanning direction and speed of the charged particle beams 52 and the moving direction and speed of the pattern in the blanking aperture array means 6 are adjusted taking into account the conditions such as shape of pattern, distance between blanking apertures 62, etc. to operate all means at a specified timing, the exposure can be executed by operating the control means so that the irradiation is carried out when the charged particle beams that are formed by the blanking apertures 1B 1 , 1B 2 , 1B 3 ... of the aperture stage 1B reach the clearance portion of a straight intermittently exposed part formed on the object 19 to be exposed by the blanking apertures 1A 1 , 1A 2 , 1A 3 ... of the aperture stage 1A. In the present invention, the specified position of the object 19 to be exposed is exposed and irradiated a plurality of times by the charged particle beams that have passed through different blanking apertures. Strictly speaking, the same position is rarely irradiated precisely a plurality of times and a slight deviation of the irradiating position of the charged particle beams is unavoidable. In the present invention, a region including a certain allowance around the predetermined position on the object to be exposed as the center is irradiated by a plurality of charged particle beams. The above embodiment is described as an example where the stage 20, on which the object 19 to be exposed is mounted, is not moved when the charged particle beams are irradiated for exposure, that is, as the step and repeat system. In the present invention, a continuous moving system by which the scanning of the charged particle beams and the stage at the same time can be performed. In this case, a complex control system is required. Figures 16(A) to 16(C) show a process of exposure of a predetermined pattern using the blanking aperture array in another embodiment of the present invention. In order to simplify the disclosure, the process is illustrated in Fig. 16 (C) to draw the pattern as shown in Fig. 16 (B) only by the charged particle beam passing through one group of apertures constituted by the first aperture row (as row A, and including three apertures 1, 3 and 5) and the second aperture row (as row B, and including two apertures 2 and 4). Here, assuming that the respective apertures 1, 3 and 5 of the first aperture row offset the above-mentioned pitch 2S in a direction perpendicular to the scanning direction, the respective apertures 2 and 4 of the second aperture row are offset relative to respective apertures 1, 2 and 3 of the first aperture row in a magnitude of pitch S. Here, the raster scanning speed in Y direction is 100 µm/5 µsec = 0.05 µm/2.5 nsec. Accordingly, relative to the ON/OFF signal applied to the braking electrodes provided in respective apertures in the row A, the ON/OFF signal applied to the blanking electrodes in a respective aperture in the row B should be delayed to satisfy TAB = L/V (V is the raster scanning speed), when the distance between the rows A and B in the scanning direction is L. Since L = 0.1 µm, V = 0.05 µm/2.5 nsec, in the shown example, TAB becomes 5 nsec. Thus, when the sample is placed at the predetermined position, a raster scan is performed to irradiate the beam to the predetermined position. Namely, as shown in Fig. 16 (C), at first, at a time T = 1 (here, time T takes a unit to advance the raster scan in a magnitude of 0.05 µm, and therefore 2.5 nsec in the foregoing example), the lower most two regions (the region with single direction hatching) in the drawing pattern are irradiated by the charged particle beam passing the apertures 1 and 3 of the row A. Next, at T = 2, (2.5 nsec later), the three regions (the region with single direction hatching) immediately above the lower most region are irradiated by the charged particle beam passing through the apertures 1, 3 and 5. It should be noted that the region illustrated with cross hatching at the lowermost region represents the region that as already been irradiated in the preceding period (i.e., T = 1). In the similar manner, at T = 3, the next two regions (the regions with the single direction hatching) are irradiated by the charged particle beam passing through the aperture 1 and 3, at T = 4, the next three regions (the regions with the single direction hatching) by the charged particle beam passing through the apertures 1, 3 and 5, and subsequently, at T = 5, the next two regions (the region with the single direction hatching) are irradiated by the charged particle beam passing through the apertures 1 and 5, at the same time; the remaining two regions in the same row of the regions irradiated by the charged particle beam at the time T = 3, are irradiated by the charged particle beam passing through the apertures 2 and 4 of the row B. In a similar manner, at T = 8, all of the pattern regions (even in a direction perpendicular to the scanning direction) are irradiated by the charged particle beam passing through respective apertures. As set forth, in Fig. 16 (C), the regions illustrated with single direction hatching are the regions currently irradiated by the charged particle beam and the regions illustrated with the cross hatching are the regions already irradiated in the preceding periods. Also, Fig. 16 (C) shows shifting of the reference line shown as Line Y0 in Fig. 16 (A) on the sample according to a shifting of the position of the raster scan. Here, in the blanking aperture array according to the present invention, as set forth above, a plurality of groups (8 groups in the foregoing example) of apertures are aligned in the scanning direction of the charged particle beam (namely, arranging the blanking aperture groups in several rows, e.g., 8 columns in scanning direction, in the scanning-direction), so that the same exposure of the same region on the object to be exposed within the same scanning timing with a timing delay. Namely, in the above-mentioned example, exposure is performed 8 times. Namely, in the case that it takes 20 nsec for exposure of the specific point on the resist (i.e., exposure time of the resist is 20 nsec), and when the scanning speed per 0.05 µm is 2.5 nsec, the exposure time of 2.5 nsec × 8 = 20 nsec can be obtained by a total of 8 shots of beam irradiation by an irradiating beam when each of the blanking apertures of the 8 rows passes over the corresponding position. On the other hand, when re-focusing is performed upon exposure of the charged particle beam with the blanking aperture array according to the present invention, and at the transition from the region to be completely exposed in the overall area to the region having no area to be exposed, if the distance (corresponding to the distance a of Fig. 2) between the specific aperture columns (for example, 1A and 2A of the first aperture column) in each aperture group is 0.2 µm on the surface of the object to be exposed, the re-focus current can vary within a period corresponding to the period, in which the raster scan is advanced for a distance of 0.2 µm × 8 = 1.6 µm (corresponding to the distance b of Fig. 2). Accordingly, as set forth above, when the scanning speed of the beam is 0.05 µm/2.5 nsec, the re-focusing current can be adjusted from approximately 0A to the maximum value (the re-focusing current when all beams passing through respective aperture of the blanking aperture array become ON, e.g., 1A) over a period of 2.5 nsec × 1,6/0.05 = 2.5 nsec × 32 = 80 nsec. This can be easily done by an analog current driving type amplifier. Fig. 8 shows a rising waveform of an output current (the output current of the -above-mentioned analog current driving type amplifier) supplied to the re-focusing coil when exposure of the charged particle beam employs the braking aperture arrangement of the present invention, and in which is illustrated a variation from the minimum value to the maximum value over 80 nsec. It should be noted that, in Fig. 8, the vertical axis indicates the number of aperture columns through which the beam of raster scan passes, and in the shown example, sixteen aperture columns of 1A to 8B are provided. As set forth above, according to the present invention, the number of beams in ON state is increased so that even when the value of the beam current becomes large, the charged particle beam 8 can be accurately focused on the surface of the sample 19 by supplying the predetermined re-focusing current to the re-focusing coil, as shown in Fig. 7 (C). At this time, the deflecting position error (the error in the lateral direction as shown by broken line in Fig. 7 (C) can be compensated by supplying the deflection signal proportional to the number of beams in an ON state for the sub-deflector 18 via a re-focusing flyback 35. On the other hand, when the blanking aperture array according to the present invention is employed, since the region of 0.05 µm□, for example, is exposed 8 times by the beam shots, the exposure amount can be reduced to 1/8 of the necessary exposure amount for reducing one beam shot. This can be advantageously applied to the applications shown in Figs. 9 to 11. Fig. 9 (A) shows one example for the correction of proximity effect (phenomenon causing fogging of the energy in the region adjacent to the region having a high exposure amount due to reflection of the irradiated charged particle beam from the inside of the substrate to the resist). The figures shown in respective irradiating regions represents the number of shots of the charged particle beam (same in Figs. 9 through 11). As shown in Fig. 9 (A), by reducing the overall exposure amount for the large pattern, even when the patterns A and B are located close to each other, no fogging of the irradiated energy occurs in the intermediate region C. Therefore, adjoining of the patterns A and B via the intermediate region C can be eliminated. Fig. 9 (B) shows another example of a correction of the proximity effect by the exposure method according to the present invention. As shown, by reducing the exposure amount of the large pattern A other than the circumferential region thereof, the affect of the proximity effect can be reduced to make the outline of the pattern clear. Figures 10(A) and 10(B) show an example, in which the exposure pattern shifts at a magnitude smaller than the beam size. By setting the number of shots for respective regions as shown in Fig. 10 (A), the exposure for the hatched region B as shown in Fig. 10 (B) becomes possible. With this method, when the beam size is 0.05 µm□, the pattern having a smaller designated dimension can be exposed. Figures 11(A) to 11(D) show an example of exposure for the joint between fields or sub-fields employing the exposure method according to the present invention. It is assumed that the desired exposure pattern extends from A sub-field to B sub-field across the border therebetween, as shown in Fig. 11 (A). In this case, when the A sub-field is exposed, an exposure is performed with a number of shots as shown in Fig. 11 (B). In this case, the five regions extending into the B sub-field are exposed for the number of shots indicated in Fig. 11 (B) by five line means A 1R to A 5R among fourteen line beams A 1R to A 14R , which extend right across the border of the sub-field, as shown in Fig. 4 (B). Next, when the B sub-field is to be exposed, respective regions are exposed in the number of shots as indicated in Fig. 11 (C). In this case, the five regions extending into the A sub-field are exposed for the number of shots as indicated in Fig. 11 (C) by the five line beams A1L to A5L among fourteen line beams A 1L to A 14L extending left across the border. As a result, the number of shots of beams for all regions in the pattern shown in Fig. 11 (A) becomes 8. Fig. 11 (D) shows the exposure pattern when the image from respective sub-fields are slightly offset from each other. It is assumed that A represents the drawing pattern from the A sub-field and B represents the drawing pattern from the B sub-field. The drawing pattern formed by combining these two patterns is represented by C. By this, the pattern that is substantially continuous at the joint in comparison with that drawn independently from respective sub-fields, can be drawn. As set forth above, by lowering the exposure amount at the border region of the fields or sub-fields and by performing an exposure in an overlapping manner for the fields or sub-fields so that the same positions can be exposed from respective adjacent fields or sub-fields, the joint between adjacent fields or sub-fields can be smoothly connected. The following table 1 shows practical values of various data when exposure of the charged particle beam is performed employing the method according to the present invention. 1 Beam Size 0.05 µm□ 2 Current Density 250 A/cm 2 3 Beam Current 6.25 mA 4 Number of Beam in BAA X direction 128 × 8 = 1024 5 Total Beam Current 6.4 µA 6 Beam Convergence Half Angle 10 mrad 7 Electron Bean Luminance 10 6 A/cm 2 sterad 8 Process Amount 1 cm 2 /sec 9 Stage Shift Y direction 50 mm/sec 10 Main Deflector X direction 2 mm/2 msec 11 Sub-Deflector Y direction 5 × 100 µm 2 /5 µsec 12 Scan Y direction 100 µm/5 µsec 0.05 µm/2.5 nsec 2.5 nsec/1 shot 13 Resist Sensitivity, Exposure Time 5 µC/cm 2 20 nsec 8 shots 14 Re-Focusing Time 80 nsec As shown in the foregoing table, the beam size at the surface of the sample is set to be 0.05 µm□. On the other hand, the current density is set to be 250 A/cm 2 . On the other hand, the current value of a single beam becomes 6.26 nA. The number of beams in the blanking aperture array is, since the number of apertures in each aperture group (for example, formed by the first aperture column 1A and the second aperture column 1B) is 128, 128 × 8 = 1024, in total. Also, the total beam current is 6.25 nA × 1024 = 6.4 µA. On the other hand, the beam convergence half angle α (see Fig. 12) becomes 10 mmrad, and the luminance β of the electron beam becomes 10 6 A/cm 2 sterad. Next, since the process is performed in the stage shifting direction at a speed of 50 mm/sec with the scanning width of 2 mm, the process amount becomes 1 cm 2 /sec. The stage shifting speed is set to be 50 mm/sec in Y direction. The main deflection is 2 mm/2 msec in X direction and the sub deflection is 5 µm × 100 µm/5 µsec in Y direction. Furthermore, the scanning speed becomes 100 µm/5 µsec = 0.05 µm/2.5 nsec. Since the beam size is 0.05 µm□, the beam staying period per one shot becomes 2.5 nsec. Setting the resist sensitivity at 5 µC/cm 2 , the exposure time is derived to be 20 nsec by dividing the resist sensitivity by the current density of the beam. Accordingly, by irradiating 8 times a sufficient exposure time can be obtained. The re-focus time (allowed period for increasing the re-focusing current from the minimum value to the maximum value) is 80 nsec, as set forth above. According to the present invention, even when the number of charged particle beams is increased, re-focusing for compensating focus error due to Coulomb interaction can be facilitated to allow the formation of a sharp pattern. Also, even when a plurality of aperture groups are formed, the wiring for respective electrodes on the blanking aperture array becomes easy. Furthermore, the present invention allows a substantially high density exposure with no gaps between irradiated points. Further in accordance with the charged particle electron beams exposing method of the present invention, the basic method thereof is completely different from that of US-A-4153843 in that the exposure operation is carried out in such a way that the charged particle electron beams expose all of the predetermined exposure region simultaneously therein by utilizing a blanking aperture array in which all of the apertures are arranged two dimensional and all of the apertures formed in the aperture array are used simultaneously. Therefore, in the present invention, an inner diameter of the blanking aperture and a pitch thereof can be set previously at a suitable dimension respectively, so that all of the exposed positions formed on the sample to be exposed are in contact with each other and thus a plurality of the beams can be controlled easily without creating defecting portions as shown in the conventional technology. In the present invention, since each one of a plurality of beams are exposed on the respective addressed position and, each of them being adjacent to each other, both the aberration and the reduction ratio of all the beams can be controlled at the same level. And further, in the present invention, since the interleave method is not adopted, the controlling circuit of the charged particle electron beams is simplified. On the other hand, in the present invention, since the charged particle electron beams are simultaneously exposed on the plurality of addressed positions adjacently arranged on the sample to be exposed, all of the addressed positions formed on the sample can be exposed with approximately the same conditions when the addressed positions are exposed with the beam each having the same intensity.

Claims: A method for exposing an object to a charged particle beam comprising : a charged particle beam generating step for generating a base charged particle beam; a dividing step for dividing said base charged particle beam into a plurality of charged particle beams (52) which have same beam profiles and are arranged on a plurality of parallel extending planes in a two dimensional form, each of said planes including a group of equidistant beams, so that columns of beams are formed, said beams being arranged within said planes such that also rows of equidistant beams are formed which are extending perpendicular to said columns; a pattern generating step for forming a predetermined radiation pattern by independently setting said plurality of charged particle beams to be respectively ON and OFF; in the ON state where the charged particle beams (52) reach the object (19) to be exposed and in the OFF state where the charged particle beams (52) cannot reach the object (19) to be exposed; and an irradiating step of irradiating a predetermined position of said object (19) with said radiation pattern; scanning said charged particle beams (52) on said object (19) in the direction of said columns using deflection means (14, 18, 50) for creating scanning movements of the plurality of charged particle beams (52); said charged particle beam generating step, said pattern generating step and said irradiating step being carried out in synchronism with said scanning; said radiation patterns to be exposed on said object (19) being shifted in said direction of said columns in synchronism with said scanning by changing the ON/OFF states of blanking apertures which are controlled by a blanking aperture array control means (24), and each region on said object (19) to be exposed is exposed a plurality of times by said charged particle beams at different positions in the arrangement, characterized in that said method further comprises the step of: adjusting the focus states of said charged particle beams according to a sum of ON state charged particle beams. A method according to claim 1, wherein the width of the arrangement of said charged particle beams (52) on the object (19) in the direction of said row is at least equal to the width of a sub-field to scan said charged particle beam. A method according to claim 1, wherein said charged particle beams (52) projected onto the object (19) are divided into a plurality of groups each of which consists of a number of rows, and said rows in each group are respectively shifted by a value obtained by dividing the pitch of the beams in the rows by said number. A method according to claim 3, wherein if the width of each of said charged particle beams (52) in the row direction is S and the number of said charged particle beams in each row is n on the object (19), the width of the arrangement of said charged particle beams (2) on the object (19) in the row direction is set to be nS or a value approximate to nS. A method according to claim 3, wherein exposure timing of said blanking apertures (52) of neighboring rows are controlled to have a difference time corresponding to the pitch of the beams in the column direction. A method according to claim 1, wherein a number of exposures at inside of the pattern is smaller than that of the circumferential portion of said pattern. A method according to claim 1, wherein the region outside of the exposure pattern is exposed by a lower irradiation intensity. A method according to claim 1, wherein offsets of irradiation positions of said charged particle beams are adjusted according to a sum of ON state charged particle beams. A charged particle beam exposure system for carrying out the method according to claim 1 comprising: a charged particle beam generating means for generating a base charged particle beam; a blanking aperture array (6) for dividing said base charged particle beam into a plurality of charged particle beams, said blanking aperture array means (6) having a plurality of blanking apertures (62) which have same opening areas and are arranged on a plane in a two dimensional form in which said plurality of blanking apertures (62) are equidistant arranged along a plurality of parallel rows and parallel columns extending perpendicular to said rows, said rows being equidistant each of said blanking apertures being independently set to the ON state where a part of the base charged particle beams (52) generated by said charged particle generating means (1) pass through the blanking aperture (62) as a charged particle beam and reach an object (19) to be exposed or the OFF state where the charged particle beams (52) cannot reach the object (19) to be exposed; a stage (20) for holding the object (19) to be exposed; a deflection means (50, 14, 18) for deflecting the charged particle beam (52) passing through said blanking aperture array (6) by a specified amount in order to irradiate the charged particle beams onto the specified position of said object (19) to be exposed; and a blanking aperture array control means (24) for controlling said blanking aperture array (6) to form a predetermined radiation pattern and a scanning means for controlling said deflection means (50, 14, 18) so that a region on said object (19) to be exposed is continuously scanned in the direction of said columns; said blanking aperture array control means (24) controls the shifting of said radiation patterns to be exposed on said object (19) in said column direction in synchronism with said scanning, and exposes each region on said object (19) a plurality of times by charged particle beams passing through different blanking apertures of said blanking aperture array (6) arranged in said column direction, characterized in that said system further comprises a calculating means (34) for calculating a sum of ON state charged particle beams and a further control means (35) for adjusting focus states of said charged particle beams according to the sum of ON state charged particle beams. A charged particle beam exposure system according to claim 9, wherein the width of the arrangement of said blanking apertures (62) in the row direction is at least equal to the width of a sub-field to scan said charges particle beam. A charged particle beam exposure system according to claim 9, wherein said blanking apertures (62) of said blanking aperture array (6) are divided into a plurality of groups each of which consists of a number of rows, and said rows in each group are respectively shifted by a value obtained by dividing the pitch of the beams in the rows by said number. A charged particle beam exposure system according to claim 11, wherein, if the width of each of said blanking apertures in the row direction is S and the number of said rows in each group is n, a distance between neighboring blanking apertures (62) in the row direction is set to be nS or a value approximately equal to nS. A charged particle beam exposure system according to claim 11, wherein said blanking aperture array control means (24) controls exposure timing of said blanking apertures (62) of neighboring rows to have a difference time corresponding to the pitch of the beams in the column direction. A charged particle beam exposure system according to claim 9, each blanking aperture (62) has electrodes (65, 66) which control ON/OFF state thereof. A charged particle beam exposure system according to claim 9, wherein said electrode means (65, 66) comprises two mutually independent electrode sections provided in the vicinity of two opposing surfaces of said blanking aperture (62), and one of said electrode section forming a variable voltage electrode connected to said blanking aperture array control means (24) and the other forming a constant voltage electrode connected to a constant voltage source. A charged particle beam exposure system according to claim 11, wherein wiring (67, 69) is provided utilizing a space extending from both column direction ends of said blanking array (62) to the clearance between rows of said blanking apertures toward the inside of a control signal line from said blanking aperture array control means (24) and connects said control signal line to respective variable voltage electrodes of respective blanking aperture, and said constant voltage source wiring (68) is arranged in the vicinity of the center of said blanking to aperture array connect said constant voltage source wiring to said constant voltage electrodes of respective blanking apertures. A charged particle beam exposure system according to claim 11, further comprising a control means for controlling a number of exposures at inside of the pattern to be smaller than that of the circumferential portion of said pattern. A charged particle beam exposure system according to claim 11, further comprising a control means for controlling the irradiation intensity at the region outside of the exposure pattern to be lower. A charged particle beam exposure system according to claim 11, further comprising a calculating means (34) for calculating a sum of ON state charged particle beams and a control means (35) for adjusting offsets of irradiation positions of said charged particle beams according to the sum of ON state charged particle beams.

Inventors: FUEKI SHUNSUKE, KAI JUNICHI, KAWASHIMA KENICHI, OSE YOSHIHISA, SAKAMOTO KIICHI, TAKAHASHI YASUSHI, YAMADA AKIO, YASUDA HIROSHI, FUEKI, SHUNSUKE, KAI, JUNICHI, KAWASHIMA, KENICHI, OSE, YOSHIHISA, SAKAMOTO, KIICHI, TAKAHASHI, YASUSHI, YAMADA, AKIO, YASUDA, HIROSHI, Fueki, Shunsuke, c/o FUJITSU LIMITED, Kai, Junichi, c/o FUJITSU LIMITED, Kawashima, Kenichi, c/o FUJITSU LIMITED, Ose, Yoshihisa, c/o FUJITSU LIMITED, Sakamoto, Kiichi, c/o FUJITSU LIMITED, Takahashi, Yasushi, c/o FUJITSU LIMITED, YAMADA, AKIO, C/O FUJITSU LIMITED, Yasuda, Hiroshi, c/o FUJITSU LIMITED
Applicants: FUJITSU LTD, FUJITSU LIMITED
Application year: 1992
Main classification: H01J37
IPC codes: H01J37