Process for fabricating an optical device for generating a second harmonic optical beam

Abstract: A method for fabricating an SHG device by forming an inversion region (4) having a first polarization selectively in a ferroelectric substrate (1) that has a second, opposite polarization. The method comprises the steps of: applying a proton exchange process for exchanging cations in the ferroelectric substrate with protons selectively in correspondence to a region in which the inversion region is to be formed; providing electrodes (5, 6) on upper and lower major surfaces of the ferroelectric substrate; and growing the inversion region selectively in a direction vertical to the upper major surface of the ferroelectric substrate while applying a d.c. voltage to the electrode on the upper major surface of the ferroelectric substrate to induce an electric field acting in a direction coincident to a direction of said first polarization in said ferroelectric substrate.

Description: The present invention generally relates to fabrication of optical devices and more particularly to a fabrication process of an optical device supplied with an output optical beam from a laser diode for generating a second harmonic optical beam therefrom. In the wide-spread use of laser diodes in various fields such as laser printers, laser scanners, optical disk devices, etc., there is an increasing demand for an optical beam with a reduced wavelength. Thus, there are intensive efforts for reducing the oscillation wavelength of laser diodes from the conventional infrared region to the visible region for increased storage capacity as well as for easiness in handling the device. On the other hand, there is a limitation on the reduction of oscillation wavelength in the currently available technique, and attempts are being made to use the higher order harmonics of the laser oscillation for the formation of a desired short wavelength output beam. Conventionally, the bulk crystal of materials that show the non-linear optical property has been used for converting the optical beam of the fundamental mode to the second harmonic beam. Such a device is known as a SHG (second-order harmonic generation) device. Unfortunately, the optical non-linearity that these bulk crystals show is generally limited and the efficiency of conversion is small. Associated therewith, there exists a problem that one needs a large optical output power for the laser diode that drives the SHG device, in order to obtain the desired power for the second-harmonic optical beam. Meanwhile, there is a proposal to use a ferroelectric material for achieving the desired conversion of wavelength of the optical beam with an improved efficiency of conversion. Generally, ferroelectric materials show very large non-linear optical constants. FIG.1(A) shows a conventional SHG device 111 A of so-called Cherenkov radiation type that uses a substrate 112 of a ferroelectric crystal such as LiNbO 3 , LiTaO 3 , etc., and an optical waveguide 113 provided on the surface of the substrate 112. The optical waveguide 113 is formed for example by a modification of composition of the substrate and has an increased refractive index for confining the optical beam therein. Such a waveguide 113 may be formed by processing the substrate surface by benzoic acid or pyrophosphoric acid for substituting the cations of the ferroelectric material by protons. There, an input optical beam is injected at an end of the optical waveguide 113 such that the optical beam travels along the optical waveguide 113, and the second harmonic optical beam is formed outside the optical waveguide. In such a device, there exists a problem in that the second order beam has an arc-shape cross section as indicated in the drawing and the optical beam having such an arc-shape cross section is difficult to focus into a small beam spot. Thus, the device of this prior is not suitable for applications where a small, sharp optical beam is required as in the case of information processing apparatuses. FIG.1(B) shows another conventional device 111 B called the QPM (quasi-phase matching) type that also uses a ferroelectric substrate 112 formed with an optical waveguide 113 similarly to the previous device 111 A , wherein the substrate 112 is polarized in a predetermined direction. In the device 111 B , it should be noted that there are formed a number of regions 115 with a polarization opposite to the polarization of the substrate 112 along the direction of the optical waveguide 113, and such an inversion region 115 is repeated with a predetermined pitch such that a noninversion region 114 having a polarization identical with the substrate is interposed between the adjacent regions 115. There, the pitch of the region 114 and hence the pitch of the region 115 are set such that the decay of the second-harmonic optical beam due to the refractive index difference between the fundamental mode and the second-harmonic mode in the optical waveguide 113 is compensated for particularly at the wavelength corresponding to the second harmonic mode. By injecting an input optical beam having the fundamental wavelength at an end of the optical waveguide 113, the intensity of the second-harmonic beam increases as the optical beam travels along the waveguide 113. The device 111 B has a preferable feature, associated with the fact that the desired second-harmonic optical beam is confined in the optical waveguide 113, in that the distortion of the beam shape is minimal. Thereby, one can obtain a very sharp optical beam by focusing the second-harmonic beam by suitable optical means. Various efforts are being made for developing the process for inducing the inversion of polarization in the ferroelectric substrate such that the inversion region 115 is formed with a controlled pitch. For example, the region 115 may be formed by: (a) diffusing titanium into the LiNbO 3 substrate selectively in correspondence to the region where the desired inversion of polarization is to be induced; (b) removing the Li component from the surface of the LiNbO 3 substrate selectively in correspondence to the region where the inversion of polarization is to be induced; (c) exchanging the Li + ions in the LiTaO 3 substrate with protons in correspondence to the region where the desired inversion of polarization is to be induced and heating the substrate thus processed; and (d) irradiating the substrate by an electron beam in correspondence to the region where the desired inversion of polarization is to be induced. FIGS.2(A) and 2(B) show the conventional process for causing the inversion of polarization in accordance with the foregoing process (a), wherein a titanium layer 121 is deposited on the surface of a substrate 112a of LiNbO 3 by a vacuum deposition process, and the titanium layer 121 thus deposited is patterned as shown in FIG.2(A) such that the titanium layer remains only in correspondence to the part on which the region 115 is to be formed. Next, the structure of FIG.2(A) is subjected to a heat treatment process at a temperature immediately below the Curie temperature of the substrate (1210 °C) for causing a diffusion of titanium into the substrate as shown in FIG.2(B). As a result of the diffusion, the inversion region 115 is formed with a triangular cross section. FIGS.3(A) and 3(B) show another conventional process for forming the polarization inversion according to the process (b), wherein a silicon oxide film 122 is provided on the surface of the LiNbO 3 substrate 112a by sputtering and patterned subsequently to form the structure of FIG.3(A). Further, the structure of FIG.3(A) is held at a temperature immediately below the Curie temperature of the substrate for causing a diffusion of Li to the silicon oxide film 122. Thereby, the composition of the substrate 112a is modified selectively in correspondence to the part where the diffusion has occurred, and the desired inversion of polarization occurs in correspondence to the region thus formed with the inversion of polarization. In any of these conventional processes, there arises a problem, associated with the relatively low threshold of optical damage of the LiNbO 3 substrate, in that the substrate as well as the optical waveguide may be damaged by the optical radiation. Further, the depth of the region 115 formed by the foregoing processes are too small for causing the desired interaction with the input optical beam propagating through the optical waveguide. With respect to the problem of optical damage, the LiTaO 3 substrate is advantageous because of the large threshold of optical damage pertinent to LiTaO 3 . In addition, the LiTaO 3 substrate is advantageous from the view point of forming the region 115 with a relatively large depth that can reach as much as one quarter of the pitch formed by the region 115. On the other hand, the optical waveguide 113 that is formed in the LiTaO 3 substrate generally has a thickness or depth, measured perpendicularly to the upper major surface of the substrate, of more than 2 µm. The formation of the optical waveguide 113 having a depth smaller than 2 µm is difficult or not desirable because of various reasons. In order to achieve the conversion of the fundamental optical beam to the second-harmonic beam by the interaction with the region 115 effectively, therefore, it is necessary that the inversion region 115 extends vertically from the surface with a sufficient depth at larger than about 2 µm, preferably larger than 10 µm. FIGS.4(A) - 4(C) show the conventional process for forming the polarization inversion 115 on the surface of a LiTaO 3 substrate 112c according to the foregoing process (c), wherein the surface of the substrate designated as +C represents the surface to which the polarization vector is pointed, while the surface designated as -C represents the surface opposing the +C surface. Referring to FIG.4(A), a Z-cut crystal of LiTaO 3 is used as the substrate 112c with a polarization formed such that the polarization vector points to the lower major surface of the substrate 112c. In other words, the lower major surface of the substrate 112c provides the +C surface while the upper major surface of the substrate provides the -C surface in the illustrated example. Further, the upper major surface or the -C surface is polished to the optical grade and a mask layer 123 of Ta is deposited on the -C surface. The mask layer 123 is patterned such that there are formed openings 123a in correspondence to the inversion region 115 to be formed to expose the upper major surface of the substrate 112c. As illustrated in FIG.4(A), the opening 123a has an elongate form extending in the Y-direction or lateral direction of the substrate 112c. Further, the opening 123a is repeated a plurality of times in the X-direction in correspondence to the periodic repetition of the inversion region 115. Next, in the step of FIG.4(B), the substrate of FIG.4(A) thus masked with the Ta mask 123 is subjected to a proton exchange process. More specifically, the structure of FIG.4 (A) is immersed in a solution of pyrophosphoric acid held at 250 °C for 30 minutes. As a result of the proton exchange process, the Li + ions in the substrate are exchanged with protons H + via the opening 123a. After the step of FIG.4(B), the structure of FIG.4(B) is subjected to a heat treatment process at a temperature immediately below the Curie temperature of the substrate 112c (about 590 °C) for causing an inversion of polarization in correspondence to the region where the proton exchange has occurred, and the inversion region 115 is formed periodically in areas separated from each other by the non-inversion region 114 as shown in FIG.4(C). After the inversion region 115 is formed, the substrate 112c is formed with an optical waveguide 113 (not shown in FIGS.4(A) - 4(C)) also by the proton exchange process such that the optical waveguide 113 extends in the X-direction or longitudinal direction of the substrate 112c. In the process (c) explained above, one can form the inversion region 115 with a width substantially identical with the width of the noninversion region 114 and further with a semi-circular cross section when viewed in the Y-direction of the substrate 112c. When such a structure is applied to the conversion of the laser beam having a wavelength of about 1 µm, it is necessary to provided the inversion regions 115 with a pitch of about 6 µm. This means that each inversion region 115 should have a width of about 3 µm. When the width is about 3 µm, the depth of the region 115 formed in accordance with the process of FIGS.4(A) - 4(C) has a depth of about 1.5 µm in correspondence to one-quarter of the pitch. In view of the depth of 2 um of the optical waveguide 113, the inversion region 115 does not reach the bottom of the optical waveguide 113, and the SHG device fabricated according to the process of FIGS.4(A) - 4(C) cannot meet the demand of efficient conversion of the fundamental optical beam. This problem of insufficient depth of the region 115 becomes particularly acute when the SHG device is used in combination with a laser diode that produces an output optical beam with a reduced wavelength such as 0.85 µm. In such a case, the desired pitch of the inversion region 115 for the wavelength conversion is about 3 - 4 µm. This means that one can form the inversion region 115 only with a depth of less than 1 µm. Thereby, the SHG device is no longer effective in conversion of the fundamental optical beam to the second order optical beam. In the fourth process (d) for forming the inversion region 115 by the electron beam, one can achieve a sufficient depth for the region 115. On the other hand, such a process for writing the pattern in correspondence to the inversion region 115 by the focused electron beam requires a long processing time and is disadvantageous from the view point of mass producing the SHG device. According to one aspect of the present invention, there is provided a method for forming an inversion region having a first polarization in a ferroelectric substrate that has a second, opposite polarization, comprising the steps of: providing upper and lower electrodes respectively on upper and lower major surfaces of a ferroelectric substrate; patterning the upper electrode such that a plurality of electrode fingers are formed on the upper major surface of the substrate in correspondence to a region in which said inversion region is to be formed; and causing an inversion of polarization in said ferroelectric substrate in correspondence to said region wherein said electrode fingers are provided by applying a voltage to the electrode fingers on the upper major surface of the substrate; characterized in that said method further comprises a step of modifying said electrode fingers on said upper major surface of said substrate to form a buffer structure for eliminating an electric discharge occurring at the electrode fingers, said step of forming the buffer structure comprising the step of forming a groove into the upper major surface of the ferroelectric substrate such that the groove separates both edge parts located at both longitudinal ends of each electrode finger from a central part thereof. According to this aspect of the present invention, one can eliminate successfully the problem of the electrode patterns being damaged by the electric discharge occurring at the edge part of the electrode pattern, by isolating or eliminating the edge part of the electrode patterns from the essential part thereof. According to another aspect of the invention, there is provided a method for forming an inversion region having a first polarization in a ferroelectric substrate that has a second, opposite polarization, comprising the steps of: providing upper and lower electrodes respectively on upper and lower major surfaces of a ferroelectric substrate; patterning the upper electrode such that a plurality of finger patterns are formed on the upper major surface of the substrate to extend parallel with each other in correspondence to a region in which said inversion region is to be formed, and causing an inversion of polarization in said ferroelectric substrate in correspondence to said region wherein said finger patterns are provided by applying a predetermined voltage across the electrode provided on the upper major surface of the substrate and the electrode at the lower major surface of the substrate; characterized in that said step of patterning is conducted such that said finger patterns have an elongate rectangular shape extending with a size of less than 50 µm in an elongating direction thereof. According to this aspect of the invention, one can obtain a straight edge in the rectangular inversion region that is formed in correspondence to the rectangular electrode pattern by setting the size of the electrode pattern to be less than 50 µm in the elongating direction. Thereby, one can maximize the efficiency of conversion when the ferroelectric substrate formed with the inversion region as such is used for an SHG device. A further aspect of the invention is a method for forming an inversion region having a first polarization in a ferroelectric substrate that has a second, opposite polarization, comprising the steps of: providing upper and lower electrodes respectively on upper and lower major surfaces of a ferroelectric substrate; patterning the upper electrode such that a plurality of finger patterns are formed on the upper major surface of the substrate to extend parallel with each other in correspondence to a region in which said inversion region is to be formed; and causing an inversion of polarization in said ferroelectric substrate in correspondence to said region wherein said finger patterns are provided by applying a predetermined voltage across the electrode provided on the upper major surface of the substrate and the electrode at the lower major surface of the substrate; characterized in that said step of patterning is conducted such that said finger patterns have an elongate rectangular shape extending with a size of less than 50 um in an elongating direction; said step of forming the finger patterns comprising the steps of: forming a plurality of finger-shaped openings in said upper electrode as said finger patterns such that each of said finger-shaped openings extends in a direction coincident to said elongating direction of said finger patterns and such that said plurality of finger-shaped openings are arranged to form a row extending in a direction different from said elongating direction of said finger patterns; and forming a pair of elongate openings in said upper electrode to extend parallel with each other in a direction coincident to the direction of said row at both sides thereof; said step of patterning further comprising a step for forming a structure for avoiding electric discharge between said upper and lower electrodes; said step of applying the predetermined voltage being conducted in a reduced pressure environment for avoiding electric discharge occurring between said upper and lower electrodes. Reference is made, by way of example, to the accompanying drawings in which: FIGS.1(A) and 1(B) show a conventional SHG device for converting an input optical beam of the fundamental mode to an optical beam of the second harmonic mode; FIGS.2(A) and 2(B) are diagrams showing a conventional process for fabricating an SHG device; FIGS.3 (A) and 3 (B) are diagrams showing another conventional process for fabricating an SHG device; FIGS.4(A) - 4(B) are diagrams showing still another conventional process for fabricating an SHG device; FIGS.5(A) and 5(B) are diagrams showing the process for fabricating an SHG device which is useful for understanding the present invention; FIGS.6 (A) - 6(E) are diagrams showing the process for fabricating an SHG device according to a first embodiment of the present invention; FIGS.7(A) - 7(E) are diagrams showing a modification of the first embodiment; FIGS.8(A) - 8(D) are diagrams showing the process for fabricating an SHG device according to a second embodiment of the present invention; FIG.9 is a diagram showing the process for fabricating an SHG device according to a third embodiment of the present invention; FIG.10 is a diagram showing the effect achieved by the third embodiment; FIG.11 is a diagram showing a modification of the third embodiment; and FIG.12 is a diagram showing another modification of the third embodiment. In the drawings, the surface designated as +C indicates the surface of the substrate to which the polarization vector of the substrate is pointed, while the surface designated as -C indicates the surface opposite the +C surface. Before describing the embodiments of the present invention, an explanation will be made of a process for fabricating an SHG device which is not in accordance with the invention but useful for understanding the same. Referring to FIG.5(A), a Ti layer is deposited on the +C surface of a LiTaO 3 substrate 1 with a thickness of about 1000 Å, and the Ti layer thus deposited is patterned subsequently to form a number of elongate electrode patterns 21 each having a width of 1 µm and extending in the transverse direction or Y-direction of the substrate 1 such that the electrode patterns are repeated in the elongate direction or X-direction of the substrate 1 with a pitch of 3.4 µm. Further, the rear side electrode 6 is provided to cover the -C surface. Further, the LiTaO 3 substrate 1 thus formed is placed in an evacuated chamber, and a positive voltage is applied across the electrode pattern 21 by a d.c. voltage source 7 for a duration of about 1 minute with a magnitude such that there is established an electric field in the substrate 1 with the field strength of 210 kV/cm. As the device is held in a vacuum environment, the migration of electric charges via impurities on the substrate surface is effectively eliminated. Thereby, the inversion region 4 is formed in correspondence to the electrode patterns 21 with a depth of several tens of microns. In the process of applying the electric field, the magnitude and duration of the voltage may be adjusted such that the inversion region 4 and the non-inversion region 3 are repeated with the same width or size when measured in the X-direction of the substrate 1. Further, one may apply the electric field in the form of a voltage pulse with a peak field strength of about 400 kV/cm and pulse width of 10 msec for avoiding the problem of electric discharge. In this case, the voltage pulse may be repeated for about 10 seconds with a frequency of 1 Hz. After the inversion region 4 is formed as such, the electrodes are removed from the structure of FIG.5(A) and a Ta mask layer is deposited on the +C surface of the substrate 1 to form a mask 22. See FIG.5(B). Further, the mask 22 is patterned to form an opening 22a extending in the X-direction with a width of about 2 µm such that the opening 22a exposes the +C surface. Further, the substrate 1 thus covered by the mask 22 is dipped in a solution of pyrophosphoric acid 23 held at 250 °C as shown in FIG.5(B) for about 30 minutes for forming the optical waveguide 22 in correspondence to the exposed part as a result of the proton exchange. Next, the mask 22 is removed and the substrate is annealed for reducing the loss in the optical waveguide and for restoring the non-linear optical property. The SHG device thus formed with the length of 10 nm in the X-direction produced a blue optical beam having a wavelength of 420 nm in response to the injection of an optical beam having a wavelength of 840 nm. In the above process, it is of course possible to form the optical waveguide 2 before the regions 4 are formed. Next, a first embodiment of the present invention will be described with reference to FIGS.6(A) - 6(E), wherein in the step of FIG.6(A), a Ti electrode 51 is deposited on the +C surface of the substrate 1 of LiTaO 3 or LiNbO 3 . Further, an electrode 6 is deposited on the -C surface of the substrate 1. Next, the electrode 51 is patterned into a number of strip-like electrode patterns 51a such that the electrode patterns 51a are repeated in the X-direction with a pitch of 3.4 µm as shown in FIG.6(B). Further, as shown in FIG.6(C), each strip-like electrode pattern 51a is segmented into a central part 51a 1 , and lateral parts 51a 2 , 51a 3 by providing a groove 52 extending in the X-direction, such that the groove 52 separates the central part 51a 1 from the lateral parts 51a 2 , 51a 3 . There, the groove 52 is formed to cut into the +C surface of the substrate 1 and isolates the lateral parts 51a 2 and 51a 3 from the central part 51a 1 of the electrode pattern 51a electrically. In the step of FIG.6(D), the d.c. voltage source 7 is activated to apply the voltage across the central part 51a 1 of the electrode pattern 51a and the rear side electrode 6 to induce the inversion of polarization in the substrate 1 in correspondence to the electrode 51a 1 . An electric field of about 210 kV/cm is induced in the substrate 1 by the d.c. voltage source 7. Thereby, the inversion region 4 grows in the direction perpendicular to the +C surface of the substrate 1 as indicated in FIG.6(E). Further, the optical waveguide 2 is formed as indicated in FIG.6(E). There, the leak of current occurring along the side wall of the substrate 1 is substantially reduced by isolating the edge part 51a 2 , 51a 3 of the electrode pattern 51a from the essential part 51a 1 by providing the groove 52, and because of this, one can apply a large voltage exceeding 10.5 kV, for example, across the electrode pattern 51a 1 and the rear side electrode 6 in the atmospheric environment, without causing an electric discharge. It should be noted that the foregoing voltage of 10.5 kV provides an electric field strength of 210 kV/cm in the LiTaO 3 substrate having a thickness of 0.5 nm. The groove 52 provides an excellent isolation particularly when the substrate 1 is heated to remove any moisture from the surface thereof. FIGS.7(A) - 7(E) show a modification of the process of the first embodiment, wherein the steps of FIGS.7(A) and 7(B) are identical with the steps of FIGS.6(A) and 6(B). In the present modification, the electrode patterns 51a are further patterned in the step of FIG.7(C) to form electrode patterns 51b, such that the edge parts corresponding to the parts 51a 2 , 51a 3 are removed. Thereby, the IC surface of the substrate 1 is exposed around the electrode patterns 51b. Next, in the step of FIG.7(D), the d.c. voltage source 7 is employed to apply the voltage across the electrode pattern 51b and the rear side electrode 6 to induce the inversion of polarization, as indicated in FIG.7(E). In the present modification, too, one can eliminate the problem of current leak occurring at the side wall of the substrate 1. Next, a second embodiment of the present invention will be described with reference to FIGS.8(A) - 8(D), wherein the electrodes 6 and 51 are provided respectively on the +C and -C surfaces of the substrate 1, and the electrode 51 is subjected to a patterning process to form electrode patterns 51a as shown in FIG.8(B). Then, the structure of FIG.8(B) is incorporated into a vacuum chamber and the electrode patterns 51a are connected to the ground as shown in FIG.8(C). In this state, an electron beam 55 is irradiated on the rear side electrode 6 to cause a charge-up of the electrode 6 as indicated in FIG.8(C). Thereby, a voltage is applied across the electrode pattern 51a and the rear side electrode 6 and the desired inversion of polarization is induced as indicated in FIG.8(D). Next, a third embodiment of the present invention will be described with reference to FIG. 9. Referring to FIG.9, there is provided a Ti electrode layer 61 on the +C surface of the LiTaO 3 substrate 1. Further, the substrate 1 has a rear side electrode 6 at the -C surface of the substrate 1 similarly to the previous embodiments. Further, the electrode layer 61 is patterned to form anumber of elongate rectangular openings 61a each extending in the Y-direction such that the rectangular openings 61a are repeated in the X-direction. In the present embodiment, the d.c. voltage source 7 is employed to apply the voltage across the electrode 61 and the electrode 6 to induce the inversion of polarization in the substrate except for those parts corresponding to the openings 61a. There, rectangular regions are formed in the substrate 1 in correspondence to the openings 61a wherein the direction of polarization is inverted with respect to the region that surrounds the rectangular region. By forming the optical waveguide to extend in the X direction to cross the rectangular regions, one obtains an SHG device that produces a second-harmonic optical beam as a result of the enhanced interaction between the fundamental optical beam and the periodically repeated rectangular regions. In such an SHG device, it is essential that each rectangular region formed in correspondence to the openings 61a have flat, well defined front and rear edges for efficient wavelength conversion. On the other hand, it was observed that there occurs an undulation in the front and rear edges in the rectangular region, particularly when the size of the rectangular region in the elongate direction and hence the size L of the opening 61a is large. FIG.10 shows the relationship that was discovered by the inventors of the present invention, wherein the vertical axis represents the amplitude of undulation occurring in the front and rear edges of the rectangular region as represented in terms of the ratio of the polarity inversion, while the horizontal axis represents the elongate size L of the rectangular opening 61a. At the edge of the region of polarity inversion, the value of the ratio becomes 0.5, while when there exists an undulation at the edge, the ratio may fluctuate above and below 0.5. From FIG.10, it will be noted that the amplitude of undulation becomes excessively large when the size L of the mask opening 61a has increased beyond 50 µm. The result of FIG.10 indicates the preferable range of the size L for the opening 61a of less than 50 µm. Particularly, a better result is obtained when the size L is set to be less than 20 µm. The same argument holds true also in the case wherein the pattern of the electrode 61 is inverted such that electrode strips are formed in correspondence to the openings 61a. In FIG.9 it will be noted that the electrode 6 at the lower major surface of the substrate 1 is patterned such that both lateral end parts 6a and 6b are removed. Thereby, one can eliminate the problem of electric discharge occurring at the side wall of the substrate 1 between the upper and lower electrodes. FIG.11 shows a modification of the third embodiment, wherein there are provided elongate cutouts 61b to extend in the X-direction at both sides of the openings 61a. According to the construction of the present modification, it is possible to increase the concentration of electric field at the longitudinal ends of the elongated rectangular regions, and a well defined rectangular pattern is obtained for the rectangular regions. FIG.12 shows another modification of the third embodiment for increasing the concentration of the electric field at the longitudinal edge part of the rectangular region and simultaneously for avoiding a discharge that tends to occur in the structure of FIG.11 in correspondence to the region where the surface of the substrate is exposed at the cutout 61b. In the present modification, the continuous cutout 61b of FIG.11 is replaced by separate, smaller cutouts 61c that are separated from each other by a conducting bridge part 61d. Thereby, the electric discharge at the cutout 61c is successfully eliminated. Further the supply of electric charges to the electrode part that defines the openings 61a is guaranteed. In the third embodiment, one may combine various features of the previous embodiments to maximize the effect of the present invention. For example, one may form the isolation structure such as the groove 52 of FIG.6(C) or the exposed surface 53 of FIG.7(C) in the embodiment of FIG.11 and conduct the application of the d.c. voltage in the evacuated environment as described with reference to FIG.5(A). Further, the present invention is not limited to the embodiments described heretofore, but various variations and modifications may be made without departing from the scope of the invention.

Claims: A method for forming an inversion region (4) having a first polarization in a ferroelectric substrate (1) that has a second, opposite polarization, comprising the steps of:providing upper and lower electrodes (51, 6) respectively on upper and lower major surfaces of a ferroelectric substrate; patterning the upper electrode (51) such that a plurality of electrode fingers (51a) are formed on the upper major surface of the substrate in correspondence to a region (4) in which said inversion region is to be formed; and causing an inversion of polarization in said ferroelectric substrate (1) in correspondence to said region (4) wherein said electrode fingers are provided by applying a voltage to the electrode fingers on the upper major surface of the substrate; characterized in that said method further comprises a step of modifying said electrode fingers (51a) on said upper major surface of said substrate to form a buffer structure (52, 53) for eliminating an electric discharge occurring at the electrode fingers, said step of forming the buffer structure (52) comprising the step of forming a groove (52) into the upper major surface of the ferroelectric substrate (1) such that the groove separates both edge parts (51a 2 , 51a 3 ) located at both longitudinal ends of each electrode finger (51a) from a central part (51a 1 ) thereof. A method for forming an inversion region (4) having a first polarization in a ferroelectric substrate (1) that has a second, opposite polarization, comprising the steps of: providing upper and lower electrodes (61, 6) respectively on upper and lower major surfaces of a ferroelectric substrate; patterning the upper electrode such that a plurality of finger patterns (61a) are formed on the upper major surface of the substrate to extend parallel with each other in correspondence to a region in which said inversion region (4) is to be formed, and causing an inversion of polarization in said ferroelectric substrate (1) in correspondence to said region (4) wherein said finger patterns (61a) are provided by applying a predetermined voltage across the electrode (61) provided on the upper major surface of the substrate and the electrode (6) at the lower major surface of the substrate; characterized in that said step of patterning is conducted such that said finger patterns (61a) have an elongate rectangular shape extending with a size (L) of less than 50 pm in an elongating direction thereof. A method as claimed in claim 2 characterized in that said step of patterning the upper electrode (61) comprises a step of forming the finger patterns (61a) with a size (L) of less than 20 pm in the elongating direction of the finger patterns. A method as claimed in claim 3 characterized in that said step of forming the finger patterns comprises the steps of: forming a plurality of finger-shaped openings (61a) in said upper electrode (61) as said finger patterns such that each of said finger-shaped openings extends in a direction coincident to said elongating direction of said finger patterns and such that said plurality of finger-shaped openings are arranged to form a row extending in a direction different from said elongating direction of said finger patterns; and forming a pair of elongate openings (61b) in said upper electrode to extend parallel with each other in a direction coincident to the direction of said row at both sides of said row. A method for forming an inversion region (4) having a first polarization in a ferroelectric substrate (1) that has a second, opposite polarization, comprising the steps of: providing upper and lower electrodes (61, 6) respectively on upper and lower major surfaces of a ferroelectric substrate; patterning the upper electrode such that a plurality of finger patterns (61a) are formed on the upper major surface of the substrate to extend parallel with each other in correspondence to a region in which said inversion region (4) is to be formed; and causing an inversion of polarization in said ferroelectric substrate (1) in correspondence to said region (4) wherein said finger patterns (61a) are provided by applying a predetermined voltage across the electrode (61) provided on the upper major surface of the substrate and the electrode (6) at the lower major surface of the substrate; characterized in that said step of patterning is conducted such that said finger patterns have an elongate rectangular shape extending with a size of less than 50 µm in an elongating direction; said step of forming the finger patterns comprising the steps of: forming a plurality of finger-shaped openings (61a) in said upper electrode (61) as said finger patterns such that each of said finger-shaped openings extends in a direction coincident to said elongating direction of said finger patterns and such that said plurality of finger-shaped openings are arranged to form a row extending in a direction different from said elongating direction of said finger patterns; and forming a pair of elongate openings (61b) in said upper electrode to extend parallel with each other in a direction coincident to the direction of said row at both sides thereof; said step of patterning further comprising a step for forming a structure (6a, 6b) for avoiding electric discharge between said upper and lower electrodes (61, 6); said step of applying the predetermined voltage being conducted in a reduced pressure environment for avoiding electric discharge occurring between said upper and lower electrodes (61, 6). A method as claimed in claim 5 characterized in that said step for avoiding the electric discharge comprises a step for patterning said lower electrode (6) such that said lower electrode extends in a direction coincident to the direction of said row and such that said lower electrode is defined by a pair of lateral edges also extending in the direction of said row, said lower electrode being patterned to have a limited lateral size, measured in a direction perpendicular to said direction of said row, such that said lower major surface (6a, 6b) of said substrate is exposed at said lateral edges of said lower electrode, said exposed lower major surface (6a, 6b) of said substrate thereby acting as said structure for avoiding electric discharge.

Inventors: KURIMURA SUNAO, MIURA MICHIO, SAWAKI IPPEI, KURIMURA, SUNAO, MIURA, MICHIO, SAWAKI, IPPEI, Kurimura, Sunao, c/o Fujitsu Limited, Miura, Michio, c/o Fujitsu Limited, Sawaki, Ippei, c/o Fujitsu Limited
Applicants: FUJITSU LTD, FUJITSU LIMITED
Application year: 1992
Main classification: G02F1
IPC codes: G02F1, H01G7, H01L41