Process for producing single phase TlCaBaCuO thin films

Abstract: A method for producing a high T c thin oxide film (16) comprising constituent elements of Tl, Ca, Ba, and Cu is described. The method comprises the steps of: depositing the oxide film as a thin amorphous film on a supporting substrate (14), under ambient conditions, so that the Tl component is not lost due to elevated temperatures; juxtaposing the thin amorphous layer to a Tl-containing pellet (18) in a sealed environment, the Tl-containing pellet not previously having been subjected to a film annealing procedure; and annealing the thin amorphous layer by heating it to produce a single phase of the constituent elements, such phase exhibiting a high T c , whereby the Tl-containing pellet prevents loss of Tl constituents from the thin film.

Description: This invention relates to compositions which exhibit superconducting properties at temperatures of 100K and above and, more particularly, to a method for producing single phase, thin films of such compositions. Bulk superconductors with zero resistance at temperatures as high as 120K have been prepared from oxides of Thallium (Tl), Calcium (Ca), Barium (Ba), and Copper (Cu), using a variety of process conditions. At least four, high T c phases with Tl:Ca:Ba:Cu ratios of 2223 1223, 2122, and 1122 are known to exist. Articles describing the preparation of such bulk superconducting Thallium-based materials can be found as follows: Sheng et al., Nature, Vol. 332, pp. 138-139 (1988); Hazen et al., Physical Review Letters, Vol. 60, No. 16, pp. 1657-1660 (1988); Torardi et al., Science, Vol. 240, pp. 631-633 (1988); Yu et al., Superconductivity, pp. 1-20 (with 6 pages of drawings), April 21, 1988; Ghosh, New Scientists, pp. 28, April, 1988; Ihara et al., Nature, Vol. 334, pp. 510-511; Krantz et al., Solid State Communications, Vol. 69, No. 3, pp. 209-211 (1989); and Liang et al., Applied Physics Letter, 53(15), pp. 1434-1436 (1988). Additionally, US-A-4,870,052 also discloses a method for producing stable, bulk Thallium-based superconductors. Subsequent to the earliest reported results of obtaining bulk Thallium-containing superconductors, various investigators have proposed methods for producing thin films of such materials. Thallium based films with zero resistance at temperatures in the 96-97K range have been prepared by both multi-target magnetron sputtering and electron beam evaporation. In addition, sequential thermal evaporation has also been reported. Denhoff et al., in Applied Physics Letters, Vol. 54, No. 7, pp. 660-662 (1989) report that films produced by sequential evaporation exhibit rough and porous structures. They also report, as known previously, that the Thallium component is quite volatile and is easily eliminated from the thin film during an anneal treatment. They suggest that Thallium be incorporated into the film subsequently. In US-A-4,900,710, the inventors suggest depositing an alkali metal layer onto the surface for the purpose of improving properties of a high temperature copper oxide superconductor. The inventors herein have previously reported, (Applied Physics Letters, 53(4), pp. 329-331 (1988)) the preparation of Thallium-based thin films with a T c as high as approximately 120K. Thallium based films were deposited onto MgO, SrTiO₃ and Yttrium-stabilised ZrO₂ substrates, at ambient temperature, in a symmetrical RF diode sputtering system, using a pair of identical targets. The structure of the deposition system is shown in Fig. 1 and comprises targets 10 and 12, separated by approximately 25 mm., and placed directly opposite one another. A substrate 14 was positioned parallel to the centreline of targets 10 and 12, but outside of the discharge to minimise the often observed resputtering effect. The as-deposited films were not superconducting, and a post-anneal step at 775-900°C was needed to make them superconduct. Post-annealing of the films was carried out using three different methods: (1) flash annealing in open vessels at 775-800°C, (2) flash annealing in covered alumina crucibles at 900°C for 1-20 minutes and (3) annealing in sealed quartz tubes at 880-900°C for up to 3 hours, with cooling and heating rates in the range of 5-30°C per minute. Annealing in an open crucible resulted in a substantial loss of Tl from the films and in all cases, a T c well below 100K. The loss of Thallium was considerably reduced by annealing the films in a covered alumina crucible and was further reduced by annealing the films in a sealed quartz tube. In the latter cases, it was found that to produce films with a T c above 100K, that it was necessary to fill the crucible or tube, respectively, with pellets comprised of the same material used for the sputtering target. Nevertheless, it was found that the Thallium content varied widely for the annealing methods disclosed above. It was found, in general, that T c increased with increased Thallium content. Even using pellets comprised of the same material as the sputtering target, gave rise to variations in the Thallium content and to multi-phase containing films. Viewed from one aspect the present invention provides a method for producing a thin oxide superconductive film comprising constituent elements Tl, Ca, Ba, and Cu, the method comprising the steps of: a. depositioning a thin amorphous oxide film of the constituent elements on a substrate under ambient conditions; b. placing a Tl-containing pellet in contact with the thin amorphous oxide film in a sealed environment thereby obtaining a pellet/film layered structure , the T1-containing pellet not previously having been used in a film annealing procedure; c. subjecting the pellet/film layered structure of step b to an elevated temperature to accomplish an annealing of the thin amorphous film, to produce a single phase of said constituent elements, whereby the T1-containing pellet prevents loss of T1 from the thin film during such anneal. In order that the invention may be fully understood, a preferred embodiment thereof will now be described, by way of example only, with reference to the accompanying drawings in which: Fig. 1 is a schematic diagram of a prior art, thin film sputtering system; Fig. 2 is a schematic diagram of a quartz tube with a sealed insert including superconducting, Thallium-based pellets and a Thallium-based film; and Fig. 3 is a plot of resistivity vs. temperature for 2223 films deposited as films on MgO and annealed at various temperatures. As described above, Fig. 1 shows a symmetric, RF diode sputtering system in which Tl₂-Ca₂-Ba₂-Cu₃ oxide targets are employed. The sputtering system deposits an amorphous film comprising the aforesaid composition on a substrate 14. Such deposition preferably occurs at ambient temperature (approx. 45°C), so as to prevent a loss of Thallium and any crystallisation within the film, as it is deposited. Targets 10 and 12, as shown in Fig. 1, are prepared as disclosed in US-A-4,870,052. Turning to Fig. 2, after a film 16 is deposited onto substrate 14, substrate 14 (and film 16) is sandwiched between a pair of pellets 18 and 20. Each of pellets 18 and 20 is produced using the same method used to produce targets 10 and 12 in Fig. 1. Thus, pellets 18 and 20 comprise bulk-form, high T c phase of T1-Ca-Ba-Cu-O. Each pellet is prepared by annealing a mixture of powder having a 2223 starting composition at 880°C for 3 hours. Subsequent to placing pellets 18 and 20 about substrate 14, the sandwich structure is wrapped with a gold foil 22. As a result, pellets 18 and 20 are not only tightly held against substrate 14 and film 16, but also foil 22 prevents the dissipation of any Thallium that escapes from either pellets 18, 20, or film 16. In essence, foil 22 provides a contained, Thallium-rich region for film 16 during a subsequent anneal procedure. If desired, only a single pellet may be placed in the sandwich structure, but it must be placed facing thin film 16. It has been found that a desired, high T c phase of film 16 is not readily obtainable (at least insofar as Thallium content is concerned), unless pellets 18 and 20 have not theretofore been subjected to a film anneal procedure. It is preferred, therefore, that fresh pellets be employed each time a new anneal procedure is carried out. This assures that a single phase film results. Once the sandwich structure is wrapped by foil 22, it is placed in a quartz tube 24 which is then subsequently filled with oxygen at approximately 1.0 x 10⁵Pa (one atmosphere) and sealed. The quartz tube is then subjected to an anneal procedure in accordance with the below described conditions, for each of the respective phase films. EXPERIMENTAL PROCEDURE Each of the films discussed below were sputter-deposited from a pair of superconducting targets prepared from a 2223 powder mixture, using the symmetrical RF diode sputtering diode system shown in Fig. 1. The targets were prepared using processes disclosed in US-A-4,870,052. Thin films with thicknesses in the range of 0.5-5 µm (microns) were deposited on various substrates, at an ambient temperature of approximately 45°C. 2223 FILMS When an MgO substrate was employed, freshly sintered 2223 pellets were employed and the anneal procedure involved subjecting quartz tube 24 to a temperature of approximately 900°C for approximately 25 minutes. A heating rate of 5°C per minute and a cooling rate of 3°C per minute was employed. The sealed quartz tube reduced Thallium loss, and the gold foil and included pellets maintained a sufficient Thallium pressure nearby the sample, during annealing, to assure that a single phase film was achieved. When a similar film was emplaced on ZrO₂ or LaAlO₃ substrates with freshly sintered 2223 pellets, an anneal temperature of approximately 900°C could be maintained for anywhere from 45 minutes to 10 hours and still obtain the desired single phase 2223 film. A preferred time of application was 2.5 hours. The latter substrates enabled substantially higher heating and cooling rates to be used, with the preferred rate being 30°C per minute. When that heating rate was reduced substantially, a mixed phase was found in the resulting film. It was further found that single phase films on a LaAlO₃ substrate could be made to exhibit a better morphology than either of the films deposited on MgO or ZrO₂. This was achieved by initially annealing the LaAlO₃ substrate in a water-containing oxygen flow at 900°C for two hours, and subsequently depositing the film thereon. 2122 FILMS As with the procedure for the preparation of a 2223 phase film, this procedure also made use of 2223 pellets. In this case, however, it was found that, when an MgO substrate was employed, that anneal conditions required application of a temperature of approximately 875° or less, for approximately 15 minutes. For ZrO₂ and LaAlO₃ substrates, the preferred anneal temperature range was between 810°C and 875°C, applied for approximately 30 minutes. Similar heating and cooling rates to that above disclosed to achieve 2223 phase films for the respective substrate, were employed to achieve the 2122 phase films. 1223 FILMS The procedures required to produce a 1223 phase high T c , film were identical to that described for the 2223 phase film, except that pellets 18 and 20 consisted of bulk 1223 phase materials. In Fig. 3, a plot is shown of resistivity vs. temperature for 2223 films, deposited on MgO and annealed at (a) 870°C, (b) 880°C and (c) 890°C for 15 minutes, and (d) 895°C for 20 minutes with heating and cooling rates of 5°C and 3°C per minute respectively. It can be seen that curve d provides the highest T c for a 2223 film, after anneal. The above procedure describes a series of T1-based superconducting film deposition and anneal procedures for the preparation of single phase, 2223, 1223, and 1222 films, on a variety of substrates. The films were sputtered at ambient temperature in a facing target, sputtering configuration and were annealed in a sealed quartz tube with the film wrapped in a gold foil with fresh pellets surrounding. The resulting films were single phase, stable, and exhibited high Tc's in excess of 100K. A method for producing high T c , Thallium based films has been described. The method is for producing high Tc-Thallium based superconducting films wherein the Thallium content is closely controllable. The method produces Thallium-based superconducting films which exhibit single phase high T c characteristics. A method for producing a high T c thin oxide film comprising constituent elements of Tl, Ca, Ba, and Cu has been described. The method comprises the steps of: depositing an oxide film containing said constituent elements as a thin amorphous film on a supporting substrate, under ambient conditions, so that the Tl component is not lost due to elevated temperatures; juxtaposing the thin amorphous layer to a Tl-containing pellet in a sealed environment, the Tl-containing pellet not previously having been subjected to a film annealing procedure; and annealing the thin amorphous film by heating it to produce a single phase of the constituent elements, such phase exhibiting a high T c , whereby the Tl-containing pellet prevents loss of Tl constituents from the thin film.

Claims: A method for producing a thin oxide superconductive film comprising constituent elements Tl, Ca, Ba, and Cu, the method comprising the steps of: a. depositing a thin amorphous oxide film of the constituent elements on a substrate under ambient conditions; b. placing a T1-containing pellet in contact with the thin amorphous oxide film in a sealed environment thereby obtaining a pellet/film layered structure , the T1-containing pellet not previously having been used in a film annealing procedure; c. subjecting the pellet/film layered structure of step b to an elevated temperature to accomplish an annealing of the thin amorphous film, to produce a single phase of said constituent elements, whereby the Tl-containing pellet prevents loss of Tl from the thin film during such anneal. A method as claimed in claim 1 wherein the pellet/film layered structure recited in step b is intimately surrounded by a Tl-impervious enclosing means. A method as claimed in claim 2 wherein the enclosing means comprises a gold foil. A method as claimed in any of claims 2 or 3 wherein the enclosed pellet/film layered structure is placed in a glassy tube having an internal oxygen pressure of approximately 1.0 x 10⁵Pa (one atmosphere). A method as claimed in any of the preceding claims wherein the substrate is comprised of MgO and the Tl-containing pellet is prepared from a starting powder mixture of said constituent elements in the ratio of 2223. A method as claimed in claim 5 wherein step c comprises subjecting the pellet/film layered structure to a temperature of 900°C for approximately 25 minutes and employs a heating rate of approximately 5°C per minute and a cooling rate of approximately 3°C per minute. A method as claimed in any of claims 1 to 4 wherein the substrate comprises ZrO₂ or LaAlO₃, and the Tl-containing pellet is prepared from a starting powder mixture of the constituent elements in the ratio of 2223. A method as claimed in claim 7 wherein the substrate comprises LaAlO₃ and is annealed at approximately 900°C for two hours in a water-containing oxygen flow, prior to deposition of the film. A method as claimed in claim 7 wherein step c comprises subjecting the pellet/film layered structure to a temperature of approximately 900°C for a period of from 45 minutes to 10 hours and employs a heating and cooling rate of approximately 30°C per minute. A method as claimed in claim 5 wherein step c comprises subjecting the pellet/film layered structure to a temperature of approximately 875°C for approximately 15 minutes and employs a heating rate of approximately 5°C per minute and a cooling rate of approximately 3°C per minute. A method as claimed in claim 7 wherein step c comprises subjecting the pellet/film layered structure to a temperature in the range of 810°C to 875°C for approximately 30 minutes. A method as claimed in any of claims 1 to 4 wherein the substrate is comprised of MgO and the Tl-containing pellet exhibits a single phase of the constituent elements in the ratio of 1223. A method as claimed in claim 12 wherein step c comprises subjecting the pellet/film layered structure to a temperature of 900°C for approximately 25 minutes and employs a heating rate of approximately 5°C per minute and a cooling rate of approximately 3°C per minute. A method as claimed in claim 1 wherein the substrate comprises ZrO₂ or LaAlO₃, and the Tl-containing pellet exhibits a single phase of the constituent elements in the ratio of 1223. A method as claimed in claim 14 wherein step c comprises subjecting the pellet/film layered structure to a temperature of approximately 900°C for a period of from 45 minutes to 10 hours and employs a heating and cooling rate of approximately 30°C per minute. A method as claimed in claim 1 wherein the depositing step (a) is accomplished by a sputtering apparatus including opposed superconducting targets, each said target prepared from a mixture of the constituent elements in the ratio 2223.

Inventors: LEE VICTOR Y, LEE WEN Y, SALEM JESSE R, LEE, VICTOR Y., LEE, WEN Y., SALEM, JESSE R.
Applicants: IBM, INTERNATIONAL BUSINESS MACHINES CORPORATION
Application year: 1992
Main classification: H01L39
IPC codes: C23C14, H01L39, H01B12, C01G1, C01G15, H01B13, C30B29