PRODUCTION METHOD FOR OXIDE SUPERCONDUCTOR FILM

Abstract: A production method for a high quality oxide superconductor film. This method can control easily a film formation rate and a film composition, and produces an oxide superconductor film safely, economically and homogeneously over a wide range. A precursor consisting of an amorphous metal is produced deposited on a substrate by vacuum evaporation of one or more elements R (selected from rare earth metals including yttrium and lanthanoid series), Ba and Cu under a metal state. This precursor is heated for oxidation and crystallization while it is shielded from the air.

Description: Technical Field The present invention concerns a novel method for manufacturing an oxide superconductor film and, in particular, it relates to a method of manufacturing an oxide superconductor film by forming a metallic film that can be a precursor for an oxide superconductor on a substrate and, subsequently, oxidizing the same and crystallizing the superconducting material by a heat treatment. Background Art As a typical oxide superconductor having a superconducting transition temperature Tc higher than the boiling point of liquid nitrogen, a perovskite RBa 2 Cu 3 O 7 of three-layered structure, in which R is one or more of elements selected from the group consisting of Y and lanthanide series rare earth element is known. Further, a RBa 2 Cu 4 O 8 type oxide in which a Cu-O single bond in the RBa 2 Cu 3 O 7 type oxide is changed into a double bond structure has also been known as a superconductor having Tc higher than of the boiling point of liquid nitrogen. For the method of manufacturing the oxide superconductor described above into a thin film, the following two methods are generally adopted. (1) A method of vapor depositing a starting metallic material by applying a deposition process such as laser deposition, active reaction deposition, sputtering or like other method, while locally blowing a gas such as oxygen in a film-forming chamber undergoing vapor deposition, forming an amorphous oxide of an appropriate composition into a thin film or crystallizing the oxide superconductor. (2) A method of evacuating the inside of the film-forming chamber to a vacuum degree of about 1.33 × 10 -5 Pa (1 × 10 -7 Torr), then evaporating metals such as Y and Cu, and BaF 2 on a substrate from an electron impinging type vapor deposition source and then oxidizing and crystallizing the superconducting material by applying a subsequent heat treatment in an oxygen atmosphere. However, each of the prior art methods as described above has the following respective drawbacks. At first, in the method (1), it is difficult to form a thin superconductor film at high quality over a region of a large area of greater than 100 cm 2 in view of the constitution of the film-forming device, the difficulty in uniform supply of activating oxygen or the like. In addition, since the gas such as oxygen is introduced at the same time with film formation, the surface of the starting metallic material is oxidized, making evaporation unstable and making it difficult for the accurate control of the film-forming rate and the film composition. On the other hand, in the method (2) above, film formation to a region of a large area can be conducted relatively easily since there is less restriction in view of the constitution of the device. However, this method inevitably suffers from intrusion of impurities upon vapor deposition due to residual gases such as H 2 O, N 2 , H 2 and CO 2 . Further, since BaF 2 is used as an evaporation source, it is necessary to remove the F-content in the film upon oxidation and crystallization by reaction with steam at a high temperature in addition to reaction with oxygen. As a result, this not only makes the operation complicated but also generates toxic HF gas of a highly corrosive nature during reaction which causes problems with safety and sanitation. Further, since the evaporation state of BaF 2 is unstable, it is difficult for the accurate control of the film composition. EP-A-0 298 933 discloses a method of manufacturing an oxide superconductor film by electron beam evaporation. The metals Y, Ba and Cu are deposited on a substrate. The evaporation chamber is evacuated. After deposition the chamber is filled with oxygen and heated to form the oxide superconductor film. The present invention has been achieved in order to overcome the technical problems involved in the prior art and it is an object thereof to provide a method of manufacturing an oxide superconductor film capable of easily controlling the film-forming rate and film composition, producing the film safely and economically over a wide region, homogeneously and at a high quality. Disclosure of the Invention The present invention provides a method of manufacturing an oxide superconductor film, which comprises vapor depositing each of elements of R, in which R represents one or more elements selected from Y and lanthanide series rare earth elements, Ba and Cu in the state of the metal on a substrate by means of a vacuum deposition process under a high vacuum of a pressure lower than 1.33x10 -6 Pa (10 -8 Torr), thereby forming a metallic film, and oxidizing the metallic film and crystallizing the superconducting material by a heat treatment without exposing the same to atmospheric air, thereby manufacturing an oxide superconductor film. Brief Description of the Accompanying Drawings Fig. 1 is a schematic explanatory view illustrating an example of a device for practising the present invention. Fig. 2 is a plan view illustrating the state of arranging substrates in this example. Fig. 3 is a graph illustrating a heat pattern of the heat treatment in the example. 1 ... film-forming chamber 2 ... specimen exchanging chamber 3 ... Knudsen cell 4 ... electron impinging type evaporation source 6 ... substrate holder 7 ... substrate Best Mode for Practising the Invention The method (2) described above has a feature capable of forming a homogeneous superconductor thin film on a substrate of a relatively large area. Then, the present inventors have made a study from various approaches with an idea of improving the above-mentioned method having the above-mentioned advantage and overcoming the drawback by using BaF 2 as a Ba source. As a result, the present invention has been completed based on the finding that the drawback in the prior art (2) above can be overcome by vapor depositing starting metallic materials such as R, Cu and Ba in the state of metal on a substrate under high vacuum, thereby forming a metallic film and then oxidizing the same and crystallizing the superconducting material by a subsequent heat treatment. In the present invention, each of the elements of R, Ba and Cu is vapor deposited in the state of metal on the substrate to form a metallic film as a precursor for an oxide superconductor film, in which the vacuum atmosphere is a high vacuum degree of lower pressure than 1.33 × 10 -6 Pa (10 -8 Torr), preferably, an ultra high vacuum degree of lower pressure than 6.65 × 10 -8 Pa (5 × 10 -10 Torr). In the present invention, it is necessary that the metallic film is not exposed to atmospheric air in the course from the formation till the subsequent heat treatment. Since the surface of the metallic film just after it is formed on the substrate is highly active, if the metallic film is exposed to the atmospheric air, the surface of the metallic film is contaminated by reaction with moisture or carbon dioxide in the atmospheric air and it is no longer possible to manufacture a satisfactory oxide superconductor film even by the subsequent heat treatment. According to the present invention, since it is based on the constitution of applying the heat treatment after forming the metallic film, it suffers from less restriction in view of the constitution of the device and the metallic film can be formed over a greater region homogeneously. Further, since the high vacuum is adopted for evaporating the starting material in the state of metal, intrusion of impurities in the atmosphere can be avoided and the film-forming rate and the film composition can be controlled to a high degree of accuracy, thereby enabling the manufacture of an oxide superconductor film of a higher quality. Further, according to the present invention, compared with a method of using BaF 2 as one of evaporation sources, the step of removing the F-content using steam after film-formation can be avoided, and an oxide superconductor film of high quality can be formed without evolving a toxic HF gas of highly corrosive nature, safely and more economically. As a device for practising the method of the present invention, a molecular beam epitaxy (MBE) device, for example, as shown in Fig. 1 can be used. The MBE device has a film-forming chamber 1 and a specimen exchanging chamber 2. In the film-forming chamber 1, are provided a Knudsen cell 3, an electron impinging type evaporation source 4 and the like as an evaporation source for evaporating starting materials for the thin film. The Knudsen cell 3 has a feature capable of accurately controlling the film-forming rate of the starting material. Further, high melting starting material that can not be evaporated by the Knudsen cell 3 can be evaporated by the electron impinging type evaporation source 4. The periphery of the film-forming chamber 1 is surrounded with a cooler 5 referred to as a shroud and using a coolant such as liquid nitrogen, by which a residual gas in the film-forming chamber 1 is adsorbed to keep the inside of the film-forming chamber at a ultra high vacuum degree as lower pressure than 6.65 × 10 -8 Pa (5 × 10 -10 Torr). Under such ultra high vacuum, a metallic film with extremely less impurity can be manufactured. In the upper portion within the film-forming chamber 1, substrates 7 are arranged being secured to a substrate holder 6, and the substrates 7 can be heated to a temperature of about 900 °C by substrate heaters 8a, 8b to about 900 °C . 8b denotes a heater for heating the substrate disposed in the specimen exchanging chamber 2. The substrate holder 6 can rotate around the center of the substrate holder as an axis thereby enabling to manufacture a homogeneous metallic film over a wide region. When the film is formed, the pressure in the film-forming chamber 1 is reduced to ultra high vacuum, starting evaporation material is evaporated from the Knudsen cell 3 and the evaporation source 4 to the substrate 7 and the material is deposited to the surface of the substrate 7 as a film. The substrate 7 formed with the film is transported by a transfer rod 9 to the specimen exchanging chamber 2. After the completion of the transportation, a gate valve 10 is closed to isolate the specimen exchanging chamber 2 from the film-forming chamber 1. Accordingly, O 2 or Ar gas can be supplied to the specimen exchanging chamber 2 to maintain the inside at a predetermined pressure while keeping the inside of the film-forming chamber 1 to ultra high vacuum and preventing the starting evaporation material from oxidation. Description will now be made to the present invention referring to examples. Example Using the MBE device shown in Fig. 1, film-formation was conducted under the conditions shown in Table 1. A cryogenic pump was used as a main pump to reduce the pressure in the film-forming chamber 1 before the film-formation to super high vacuum of 6.65 × 10 -8 Pa (5 × 10 -10 Torr). Further, the pressure in the specimen exchanging chamber 2 was evacuated to 6.65 × 10 -6 Pa (5 × 10 -8 Torr) by using a turbo molecular pump. Then, Y, Ba and Cu were simultaneously vapor deposited on the substrate. Films were formed by using the electron impinging type evaporation source 4 for Y and the Knudsen cell 3 for Ba and Cu, respectively. Fig. 2 shows the substrate holder 6 and the substrates 7 secured thereto. For examining the distribution of the superconducting characteristics in each of the film-formation regions, identical nine substrates each of 1 × 1 (cm 2 ) size were arranged in a 15 × 15 (cm 2 ) region of the substrate holder. Numericals 1 ○ - 9 ○ shown in Fig. 2 are specimen numbers. Starting deposition material Metal of Y, Ba, Cu Substrate SrTiO 3 (100), polished single crystal polished substrate Substrate rotation speed 10 rpm Substrate temperature during film-formation 150 °C Film-forming rate 1 Å /sec for three elements Film thickness 400 Å After the film-formation, the gate valve 10 was opened, the specimen was transferred to the specimen exchanging chamber 2 and a heat treatment was applied under the conditions shown in Fig. 3. At first, an oxygen gas was introduced to control the pressure to 6.65 × 10 4 Pa (500 Torr) and, after elevating the substrate temperature to 200 °C, it was maintained for about 10 min. At this instance, the specimen was converted into an oxide. Subsequently, after evacuating once and then introducing an oxygen gas to 2.67 Pa (0.02 Torr), an Ar gas was introduced to elevate the total pressure to 66.7 kPa (500 Torr), the substrate temperature was elevated to 740 °C and maintained for 120 min. At this instance, the film was crystallized into a tetragonal system. Further, after evacuating and then introducing an oxygen gas to 6.65 × 10 4 Pa (500 Torr), the temperature was lowered to 450 °C and maintained for 30 min. At this instance, the oxide was crystallized into an orthorhombic crystals. Finally, it was cooled to a room temperature and the specimen was taken out. Table 2 shows the characteristics of the resultant films. The film composition was determined by using an inductively coupled plasma method. Specimen No. Film composition (ratio for the number of atoms: Y,Ba,Cu) Tc end (K) at 77K, OT Jc(A/cm 2 ) 1 ○ 1 : 2.00 : 3.02 89.8 1.2×10 6 2 ○ 1 : 1.98 : 3.01 90.5 1.3×10 6 3 ○ 1 : 1.99 : 3.00 90.3 1.2×10 6 4 ○ 1 : 2.01 : 3.01 89.8 1.2×10 6 5 ○ 1 : 2.00 : 2.99 91.0 1.5×10 6 6 ○ 1 : 2.01 : 2.98 90.1 1.3×10 6 7 ○ 1 : 1.98 : 3.00 89.9 1.2×10 6 8 ○ 1 : 1.98 : 3.01 90.7 1.4×10 6 9 ○ 1 : 2.00 : 3.01 89.5 1.3×10 6 As a result of the analysis for the composition, films of high homogeneity were obtained for all of the nine specimens, in which the ratio for the number of atoms of Ba and Cu to Y was 2 ± 0.02 and 3 ± 0.02, respectively. Further, high superconducting transition temperature (temperature Tc at which the electric resistance is reduced to 0), and critical current density Jc were obtained uniformly regarding the superconducting characteristics for all of the nine specimens. From the above, it can be seen that a homogeneous YBa 2 Cu 3 O 7-x superconductor film could be formed over a wide area of 15 × 15 = 225 (cm 2 ). After the film-formation and transportation to the specimen exchanging chamber 2, when the metallic film was taken out from the specimen exchanging chamber 2 without heat treatment, it has been found that the metallic film was discolored and denatured. The disclosed specimens were applied with a heat treatment under the conditions shown in Fig. 3 but no transition to the superconduction state was attained at a temperature higher than 4.2 K. From the above, it can be seen that it is essential to apply the heat treatment in the vacuum chamber without taking the metallic film into the atmospheric air, in order to manufacture a good superconductor film. Then, for examining the effect of the back pressure on the superconducting characteristics of the film, films were formed under the conditions shown in Table 1 by using a turbo molecular pump as the main pump and reducing the pressure before film-formation to low vacuum of 1.33 × 10 -4 Pa (1 × 10 -6 Torr) and subsequently the heat treatment was applied under the conditions, shown in Fig. 3. The characteristics of the resultant films are shown in Table 3. Specimen No. Film composition (ratio for the number of atoms: Y,Ba,Cu) Tc end (K) at 77K, OT Jc(A/cm 2 ) 1 ○ 1 : 1.85 : 3.10 78.0 7.9×10 4 2 ○ 1 : 1.80 : 3.15 79.2 4.2×10 4 3 ○ 1 : 2.05 : 3.20 78.5 8.9×10 4 4 ○ 1 : 2.10 : 2.95 79.0 8.6×10 4 5 ○ 1 : 2.15 : 2.80 80.0 9.0×10 4 6 ○ 1 : 2.03 : 3.16 79.6 3.5×10 4 7 ○ 1 : 1.97 : 2.98 79.8 5.8×10 4 8 ○ 1 : 1.87 : 3.05 79.0 2.0×10 4 9 ○ 1 : 2.20 : 3.13 79.4 5.9×10 4 From the Table 3, it can be considered as below. The film composition expressed by the ratio for the number of atoms of Ba, Cu relative to Y was 2 ± 0.2 and 3 ± 0.2, respectively, and the difference between the specimens is increased as compared with the results in Table 2. Also regarding the superconducting characteristics, both Tc and Jc showed lower values and the difference was increased between the specimens as compared with the results in Table 2. It is considered that this is attributable to the fact that the film could not be deposited in a purely metallic state since the evacuation pressure before film-formation was high and impurity particles intruded in the film during formation, as well as that the surface of the starting material was degraded by the impurity elements and the evaporation of the starting material was not stabilized, making it impossible for accurate composition control or the like, which hinders sufficient progress for the crystallization of superconduction. On the other hand, the present inventors have formed films after evacuating to ultra high vacuum of 6.65 × 10 -8 Pa (5 × 10 -10 Torr) and using rare earth elements of Yb, Er and Gd instead of Y under the conditions shown in Table 1 and applied a heat treatment under the conditions in Fig. 3. As a result, it has been confirmed that high characteristics substantially equal with the results in Table 2 were obtained for all of the nine specimens. Industrial Applicability As has been described above according to the present invention, the film-forming rate and the film composition can be controlled easily and an oxide superconductor film can be formed safely and economically, over a wide region, homogeneously at a high quality.

Claims: A method of manufacturing an oxide superconductor film, which comprises vapor depositing each of elements of R, in which R represents one or more elements selected from Y and lanthanide series rare earth elements, Ba and Cu in the state of the metal on a substrate by means of a vacuum deposition process under a high vacuum of a pressure lower than 1.33x10 -6 Pa (10 -8 Torr), thereby forming a metallic film, and oxidizing the metallic film and crystallizing the superconducting material by a heat treatment without exposing the same to atmospheric air, thereby manufacturing an oxide superconductor film. A manufacturing method as defined in claim 1, wherein oxidation of the metallic film and crystallization of the superconducting material are conducted stepwise while controlling the concentration of the oxidative gas, temperature and the pressure.

Inventors: HASE TAKASHI, KITA RYUSUKE, MORISHITA TADATAKA, SASAKI MASATO, HASE, TAKASHI, KITA, RYUSUKE, MORISHITA, TADATAKA, SASAKI, MASATO
Applicants: INT SUPERCONDUCTIVITY TECH, KOBE STEEL LTD, SHARP KK, INTERNATIONAL SUPERCONDUCTIVITY TECHNOLOGY CENTER, KABUSHIKI KAISHA KOBE SEIKO SHO, SHARP KABUSHIKI KAISHA
Application year: 1992
Main classification: C01G3
IPC codes: H01L39, H01B12, C23C14, C30B29, H01B13, C01G1, C01G3