Semiconductor memory device

Abstract: In a semiconductor memory device, two sense amplifiers are provided on one output signal line for reading data stored in a memory cell. The sense amplifiers are connected in parallel to each other. A control signal generation circuit generates a control signal so that one of the sense amplifiers which has a greater drive capability is activated during a predetermined time period after an address from which data is to be read out is changed, and that the sense amplifier having a smaller drive capability is activated during a time period other than the predetermined time period.

Description: BACKGROUND OF THE INVENTION 1. Field of the Invention: This invention relates to a semiconductor memory device such as a mask ROM (Read Only Memory), an EPROM (Erasable Programmable ROM) or an SRAM (Static Random Access Memory), and more particularly relates to a semiconductor memory device having an improved data read circuit. 2. Description of the Prior Art: In a semiconductor memory device, since data read out from a memory cell is a weak signal, the signal is amplified on an output signal line by a sense amplifier and then output. If the sense amplifier is always in an active state, the power consumption of the semiconductor memory device becomes too large. Therefore, in a conventional mask ROM or the like, after data read out from a memory cell is amplified by a sense amplifier and the read-out data becomes valid internally, the valid data is latched in a latch circuit. Thereafter, the sense amplifier is in an inactive state until the next read, whereby the power consumption is reduced. A data read circuit in a mask ROM of the above-mentioned configuration is shown in Figure 7 . A memory cell 1 is arranged at each crossing of a number of word lines 2 and bit lines 3 . Data stored in the memory cell 1 is input into a sense amplifier 6 through a bit line 3 via an FET 5 which is controlled by a column selection line 4 . The data S OUT amplified by the sense amplifier 6 is latched in a latch circuit 7 and output via an output circuit 8 as output data D OUT of the ROM. In this case, the sense amplifier 6 and the latch circuit 7 receive a sense signal Φ SA and a latch signal Φ LT from a timing generator (TG) circuit 9 , respectively. As shown in Figure 8 , when the TG circuit 9 detects the change of an address signal A , the sense signal Φ SA becomes High to activate the sense amplifier 6 . The latch signal Φ LT is at a High level during a short time period after the read-out data becomes valid internally, so as to allow the latch circuit 7 to latch the data S OUT output from the sense amplifier 6 . When the data S OUT is latched at the rise of the latch signal Φ LT , the sense signal Φ SA returns to Low so that the sense amplifier 6 is inactivated, whereby the power consumption of the sense amplifier 6 is suppressed until the next read. The read-out data latched in the latch circuit 7 can be output from the output circuit 8 as the output data D OUT for a predetermined period. However, in the above configuration, in the case where the address signal A does not change at the first access after the power source V cc is turned on as shown in Figure 9 , the TG circuit 9 can not output the sense signal Φ SA and the successive latch signal Φ LT , so that the output data D OUT continues invalid. In this case, the operation must be performed in such a complicated manner that a dummy cycle is carried out in order to change the address signal A after power is turned on, and then the regular address signal is output as shown in Figure 10 . In the above-mentioned configuration in which the data read from the memory cell 1 is latched in the latch circuit 7 once and then output, when erroneous data is latched by a noise on a power supply line etc., the erroneous data is output as the output data D OUT , without conversion. As described above, a conventional semiconductor memory device has problems in that it requires a dummy cycle when the system is powered on, in order to suppress the power consumption of the sense amplifier 6, and that the probability of a data read error is prone to increase. SUMMARY OF THE INVENTION The semiconductor memory device of this invention comprises: a plurality of sense amplifiers provided on one output signal line for reading data stored in a memory cell, said sense amplifiers being connected in parallel to each other; and a control signal generation circuit for generating a control signal by which said sense amplifiers are selectively activated. In a preferred embodiment, the drive capability of at least one of said sense amplifiers is greater than that of at least one other of said sense amplifiers. In a preferred embodiment, at least one of said sense amplifiers is adapted to operate at a greater speed than that of at least one other of said sense amplifiers. The control signal generation circuit may generate said control signal so that said at least one sense amplifier is activated during a predetermined time period after an address from which data is to be read out is changed, and that said at least one other sense amplifier is activated during a time period other than said predetermined time period. Alternatively, the control signal generation circuit may generate said control signal so that said at least one sense amplifier is activated during a predetermined time period after an address from which data is to be read out is changed, and said at least one other sense amplifier may be operated so as to be always in the active state. In a preferred embodiment, said sense amplifiers are differential type sense amplifiers. In the above-mentioned configuration, the control signal generation circuit can activate one or more appropriate sense amplifiers when data is read out from a memory cell. For example, a sense amplifier with high amplification is selected and activated or a plurality of sense amplifiers are activated, so that the data can surely be output at a high speed, as in the prior art. After the read-out data becomes valid, the control signal is switched and a sense amplifier which has the same amplification but operates at a low speed with a low current consumption is selected and activated, whereby the power consumption can be suppressed as in the prior art. Alternatively, the number of sense amplifiers to be activated may be reduced. Even after the read-out data becomes valid it is unnecessary to latch the data in a latch circuit because at least one sense amplifier is activated. Therefore, the probability of latching erroneous data by a noise on a power supply line etc. is greatly reduced, and the increase in the probability of data read error can be prevented. Moreover, since any one of the sense amplifiers is activated when power is turned on, the disadvantage that a dummy cycle must be carried out is eliminated. Thus, the invention described herein makes possible the objectives of: (1) providing a semiconductor memory device which needs no latch circuit; (2) providing a semiconductor memory device in which it is unnecessary to perform a dummy cycle when powered on; and (3) providing a semiconductor memory device in which the increase in the probability of data read error can be suppressed. BRIEF DESCRIPTION OF THE DRAWINGS This invention may be better understood and its numerous objects and advantages will become apparent to those skilled in the art by reference to the accompanying drawings as follows: Figure 1 is a block diagram showing one embodiment of the invention. Figure 2 is a circuit diagram showing a sense amplifier used in the embodiment of Figure 1 . Figure 3 is a graph illustrating the characteristics of the sense amplifier of Figure 2 . Figure 4 is a time chart illustrating the operation of a data read circuit in the embodiment of Figure 1 . Figure 5 is a circuit diagram showing a sense amplifier used in another embodiment of the invention. Figure 6 is a block diagram showing a further embodiment of the invention. Figure 7 is a block diagram showing a data read circuit in a prior art ROM. Figure 8 is a time chart illustrating the operation of the data read circuit of the prior art. Figure 9 is a time chart illustrating the operation of the data read circuit of the prior art when power is turned on. Figure 10 is a time chart illustrating the operation of the data read circuit of the prior art in a case where a dummy cycle is carried out when power is turned on. DESCRIPTION OF THE PREFERRED EMBODIMENTS Figures 1 to 4 show one embodiment of the invention. This embodiment is a ROM, and like reference numerals represent like components having the same functions as those of the prior art shown in Figure 7 . In the ROM of Figure 1 , a memory cell 1 is arranged at each crossing of a plurality of word lines 2 and bit lines 3 . Each of the bit lines 3 is connected to sense amplifiers 6a and 6b via an FET 5 which is controlled by a column selection line 4 . The sense amplifiers 6a and 6b are connected in parallel, and the outputs thereof are coupled to an output circuit 8 . The output circuit 8 outputs output data D OUT as read-out data of the ROM. The control output of a TG circuit 9 is connected to the sense amplifiers 6a and 6b which receive respectively a first sense signal SA 1 (Low: active) and a second sense signal SA 2 (Low: active). The sense amplifiers 6a and 6b have MOSFETs which are arranged in a similar manner as shown in Figure 2 . When, in the sense amplifier 6a , the drive capability of p-MOS transistors Q 1 and Q 2 is indicated by β p and the drive capability of n-MOS transistors Q 3 and Q 4 by β n , the drive capability of p-MOS transistors Q 5 and Q 6 , and the drive capability of n-MOS transistors Q 7 and Q 8 are set to be β p /2 and β n /2, respectively, in the sense amplifier 6b . Accordingly, the sense amplifiers 6a and 6b have the same input-output voltage characteristics Vin-Vout, as shown in Figure 3 . In the vicinity of the logic threshold voltage, the current I 2 flowing through the sense amplifier 6b is half the current I 1 flowing through the sense amplifier 6a . This means that the power consumption of the sense amplifier 6b is half that of the sense amplifier 6a . The operation of the data read circuit having the above-mentioned configuration will be described. When an address signal A is input into the ROM, a row of the memory cells 1 is first selected by one of the word lines 2 . Then, one of the bit lines 3 is selected by a corresponding one of the column selection lines 4 so that the data stored in the selected memory cell 1 is sent to the respective sense amplifiers 6a and 6b from the bit line 3 via the FET 5 . The TG circuit 9 detects the change of the address signal A so as to make the first sense signal SA 1 Low and the second sense signal SA 2 High. Thus, the sense amplifier 6a having a high drive capability is activated to amplify the read-out data and send it to the output circuit 8 as data S OUT . In this way, the weak signal of the data stored in the memory cell 1 can surely be read out at a high speed by the sense amplifier 6a . After the data S OUT thus read out becomes valid, the TG circuit 9 switches the levels of the first sense signal SA 1 to High and the second sense signal SA 2 to Low. That is, the sense amplifier 6a which has the high drive capability is inactivated and the other sense amplifier 6b is activated. Thereafter, the sense amplifier 6b outputs the data S OUT which is sent to the output circuit 8 , whereby the power consumption of the ROM can be suppressed. The output circuit 8 outputs the output data D OUT as the read-out data of the ROM. As a result, according to the embodiment, the sense amplifier 6b is in the active state after the read-out data becomes valid, and therefore it is not necessary to latch the data in a latch circuit as in the prior art, so that there is no probability of latching erroneous data by a noise on a power supply line etc. Moreover, since at least the sense amplifier 6b is activated when the system is powered on, data can surely be read out even if there is no change of the address signal A . Alternatively, the sense amplifiers 6a and 6b may have the configuration shown in Figure 5 , so as to reduce the number of elements. In this case, the sense amplifier 6b whose power consumption is low is always in the active state, and the activation of the sense amplifier 6a with a higher drive capability is controlled by the first sense signal SA 1 and the inverse signal thereof. The sense amplifiers 6a and 6b can be constructed in the form of differential amplifiers as shown in Figure 6 . In this case, it is required to provide a dummy cell 11 having the same characteristics as those of the memory cell 1 at each dummy bit line 13 , in order to generate a reference voltage. As apparent from the above description, according to the semiconductor memory device of the invention, the power consumption can be suppressed without using a latch circuit, and hence there is no probability of latching erroneous data by a noise on a power supply line etc. and the increase in the probability of data read error can be prevented. Moreover, since any one of the sense amplifiers is activated when the power is turned on, a disadvantage that data can not be read unless a dummy cycle is carried out can be eliminated. The invention may be embodied in other specific forms without departure from the scope thereof as defined by the claims.

Claims: A semiconductor memory device comprising: a plurality of sense amplifiers (6a,6b) provided on one output signal line for reading data stored in a memory cell (1), said sense amplifiers being connected in parallel to each other; and a control signal generation circuit (9) for generating a control signal by which said sense amplifiers (6a,6b) are selectively activated. A semiconductor memory device according to claim 1, wherein the drive capability of at least one (6a) of said sense amplifiers is greater than that of at least one other (6b) of said sense amplifiers. A semiconductor memory device according to claim 1, wherein at least one (6a) of said sense amplifiers is adapted to operate at a greater speed than that of at least one other (6b) of said sense amplifiers. A semiconductor memory device according to claim 2 or claim 3, wherein said control signal generation circuit (9) generates said control signal so that said at least one sense amplifier (6a) is activated during a predetermined time period after an address from which data is to be read out is changed, and that said at least one other sense amplifier (6b) is activated during a time period other than said predetermined time period. A semiconductor memory device according to claim 2 or claim 3, wherein said control signal generation circuit (9) generates said control signal so that said at least one sense amplifier (6a) is activated during a predetermined time period after an address from which data is to be read out is changed, and wherein said at least one other sense amplifier (6b) is operated so as to be always in the active state. A semiconductor memory device according to any preceding claim, wherein said sense amplifiers (6a,6b) are differential type sense amplifiers.

Inventors: HOTTA YASUHIRO, HOTTA, YASUHIRO
Applicants: SHARP KK, SHARP KABUSHIKI KAISHA
Application year: 1992
Main classification: G11C7
IPC codes: G11C11, G11C16, G11C7, G11C17