Semiconductor laser

Abstract: A p-type clad layer (7) constituting the semiconductor laser device according to this invention includes an inner clad area near to an active layer (6), and an outer clad area remote from the active layer (6), the outer clad area having a narrower bandgap than that of the inner clad area, the thickness and the composition of the inner clad area being so set that beams do not substantially exude from the active layer to the outer clad area. A multi-quantum barrier structure (12) is provided between the active layer (6) and the p-type clad layer (7). At least one of barrier layers of the multi-quantum barrier structure (12) is formed of material which applies tensile stress thereto, and at least one of the well layers provided between one of the barrier layers and its adjacent one is formed of a material which applies contraction stress thereto, whereby an average lattice constant of the multi-quantum barrier agrees with that of a substrate (2). The use of a material in the barrier layers allows the bandgap to be sufficiently wide. Consequently, even in comparatively high-temperature environments carriers, especially electrons, can be prevented from overflowing from the active layer (6) to the clad layer (7), and no deterioration of the characteristics takes place.

Description: Background of the Invention (Field of the Invention) This invention relates to a semiconductor laser device for use in laser printers, optical disks, bar code scanners and so on. (Related Background art) As semiconductor laser devices, those which emit beams near 670 nm are already known. Such semiconductor laser devices have a structure in which an active layer of gallium/indium/phosphorus (GaInP) is sandwiched by a p-type and an n-type clad layers of aluminium/gallium/indium/phosphorus (AlGaInP) (refer to, e.g., "Control of Perpendicular Radiation Angle of AlGaInP Visible Semiconductor Laser", 28a-ZG-9, The 1989 Autumn Convention of The Society of Applied Physics). But in the above-described semiconductor laser devices the p-type clad layer tends to have high temperatures because AlGaInP has higher heat resistances compared with other semiconductors, such as AlGaAs, etc. To suppress the heating of the p-type clad layer it is tried to decrease the resistivity of the p-type clad layer of AlGaInP by increasing a doping amount of the p-type clad layer, but because increases of a doping amount of the p-type clad layer adversely lowers an activation ratio of a dopant, it is impossible to decrease the resistivity of the p-type clad layer of AlGaInP. This phenomenon takes place also in the case that zinc atoms (Zn), magnesium atoms (Mg) and so on, which are major p-type dopants of the clad layer of AlGaInP, are doped. This phenomenon of drops of activation ratios of the dopants becomes more conspicuous as an Al composition ratio of the clad layer is increased. Thus, when the Al composition ratio of the clad layer is determined, a minimum value of the resistivity of the clad layer is substantially determined, and a minimum heat generation amount of the laser devices is also determined. In lowering the Al composition ratio of the p-type clad layer for this reason so as to suppress decreases of an activation ratio of the dopant, it is impossible to efficiently confine carriers in the active layer. This is a cause for deterioration of the characteristics of the semiconductor laser devices. In short, higher Al composition ratios are preferable to efficiently confine carriers in the active layer. As seen from the above, increases of the efficiency of confining carriers, and the suppression of a heat generation amount of the semiconductor laser devices are on opposite sides to each other in terms of degrees of the Al composition ratio. To shorten oscillation wavelengths of the semiconductor laser devices, a bandgap of the active layer is widened. But this results in a problem that a difference in the bandgap between the active layer and the clad layer becomes smaller, and the confinement of carriers, especially electrons, is deteriorated, characteristics of the devices in high-temperature operations being deteriorated. To solve this problem a method of using multi-quantum barriers between the active layer and the p-type clad layer (e.g., Applied Physics Letters, vol.58, 29 April 1991, pages 1822-1824, Electronics Letters, 1986, vol. 22, p. 1008; 27 p-R-2, The 1990 Autumn Convention of The Society of Applied Physics) has been proposed. But even by the use of this method, sufficiently high barriers have not been able to be obtained. In terms of the confinement of carriers, so far satisfactory effects have not been always achieved. The object of this invention is to provide a semiconductor laser device which can solve this problem and have barriers of wide bandgaps. This object is achieved by a semiconductor laser device according to claim 1. In the semiconductor laser device according to the invention, a barrier structure is formed between an active layer and a p-type clad layer, and the barrier structure is formed of a material which has tensile stress with respect to the active layer and the p-type clad layer. By forming the barrier structure of a material which has tensile stress with respect to the active layer and the p-type clad layer, the bandgap can be wide. Consequently the overflow of carriers, especially electrons, from the active layer to the clad layer can be more efficiently prevented. But it is preferable that an amount of the distortion caused in the barrier structure, and a thickness of the barrier structure has values which can prevent dislocations. The barrier structure may be of a single-barrier layer or multi-barrier layers. In the multi-barrier layer-barrier structure, a material which is feasible to contraction stress is provided at an narrow bandgap area between one of the barrier layers and its adjacent one, whereby distortion which is counter to the distortion of the barrier layers can be caused, and distortion as a whole can be mitigated. Conveniently in this case, a distortion amount as a whole can be decreased also by increasing a distortion amount per one barrier layer, i.e., increasing an effective height of the barrier layer. FIG. 1 is a view of the visible semiconductor laser device according to the invention; FIG. 2 is a view of an energy band near an active layer of the visible semiconductor laser device according to one embodiment of the invention; and FIG. 3 is a view of an energy band near an active layer of the visible semiconductor laser device according to another embodiment of the invention. Description of the Preferred Embodiments FIG. 1 is a sectional view of the visible semiconductor laser device according to one embodiment of this invention. In this embodiment a multi-quantum barrier structure 12 is provided between the active layer 6 and the p-type clad layer 7. In the laser device of FIG. 1, an n-type buffer layer 3 of, e.g., GaAs is formed on the top surface of a substrate 2 of, e.g., GaAs with an n-type electrode 1 formed on. On this buffer layer 3 there are formed an n-type clad layer 5, an active layer 6 and a p-type clad layer 7 in the stated sequence. The n-type clad layer 5 is formed of n-type AlGaInP of a uniform Al composition ratio, and the active layer 6 is formed of non-doped GaInP. The p-type clad layer 7 is formed of p-type AlGaInP. Both clad layers 5, 7 have a higher refractive index than the active layer 6. On the p-type clad layer 7 an n-type semiconductor layer 8 of, e.g., GaAs is patterned to form a current limiting structure. On the n-type semiconductor layer 8 there are formed a p-type contact layer 10 of e. g., GaAs, and a p-type electrode 11 in the stated sequence. FIG. 2 is an energy band diagram of the semiconductor laser device according to the embodiment of FIG. 1 near the active layer. The solid line 100 indicates a conductor band level. In this semiconductor laser device the substrate is a GaAs substrate, the active layer 6 is formed of undoped (Al 0.2 Ga 0.8 ) 0.5 In 0.5 P, the n-type clad layer 5 is formed of n-type (Al 0.7 Ga 0.3 ) 0.5 In 0.5 P, and the p-type clad layer 7 is formed of p-type (Al 0.7 Ga 0.3 ) 0.5 In 0.5 P. The multi-quantum barrier structure 12 is formed of p-type (Al 0.7 Ga 0.3 ) 0.6 In 0.4 P as barrier layers 13, and p-type (Al 0.7 Ga 0.3 ) 0.4 In 0.6 P as well layers 14. According to this embodiment, the barrier layers 13 are formed of a material having a wide bandgap, and the outflow of carriers from the active layer 6 to the p-type clad layer 7 can be effectively prevented. But on the other hand, this material does not lattice-match with the GaAs substrate, and the barrier layers 13 are under tensile stress. Even if a thickness of each barrier layer 13 is below a critical film thickness, dislocations may occur unless any countermeasure is taken. As a countermeasure, in this embodiment the well layers are formed of a material which has distortion exerted in a direction opposite to the tensile stress applied to the barrier layers 13, so that an average lattice constant of the barrier layers 13 and the well layers 14, i.e., a lattice constant of the multi-quantum barrier structure 12, agrees with that of the substrate for the lattice matching therebetween. Accordingly no dislocations take place. In the case that a material containing Al in a large amount that allows the barriers to be raised with the lattice-matching secured is used as has been done conventionally, it is difficult to add p-type dopant impurities (usually Zn). But in this embodiment where the barriers are raised with the Al composition ratio kept comparatively low, the doping is easy. What have to be noted in designing the film thickness of the barrier layers 13 and that of the well layers 14 are that a thickness of each layer is below a critical film thickness for the distortion of the layer so as to prevent the generation of dislocations, and that the effect of the barrier structure against electrons is maximized as much as possible within a dislocation preventive range. The respective layers of the semiconductor laser device according to this embodiment can be formed by OMVPE (Organic Metallic Vapor Phase Epitaxy). What has to be noted in forming the layers, the growth conditions are so set that diffusion of p-type dopants (usually Zn) does not damage the multi-quantum barriers. According to experiments made by the inventors, in the case that the layers were grown by OMVPE at 700 °C with a feed ratio between Zn and a III Group raw material set at 1, the multi-quantum barrier was left undamaged in about 7nm (70 Å), and there was no problem. In this embodiment, the barrier layers 13 are formed of p-type (Al 0.7 Ga 0.3 ) 0.6 In 0.4 P, and the well layers 14 are formed of p-type (Al 0.7 Ga 0.3 ) 0.4 In 0.6 P. To be general, the effect of this invention can be achieved in the case that 1≥b>0.5≥d≥0 when the barrier layers 13 are formed of p-type (Al a Ga 1-a ) b In 1-b P, and the well layers 14 are formed of p-type (Al c Ga 1-c ) d In 1-d P. The subscripts a and c are usually 1≥a≥c≥0, but when a distortion amount is sufficiently large, a<c is possible. Composition ratios (subscripts a, b, c, and d) of the respective barrier layers, and those of the well layers may be respectively different from one another. Conditions for preventing occurrences of dislocations may be experimentally determined in accordance with these constants. In the above-described embodiment, the barrier to electrons is multi-quantum barriers structure but is not essentially quantum barriers. In place of the multi-quantum barrier structure, for example, a multi-barrier structure having no quantum effects is proposed. The structure includes three 7nm (70 Å)-thickness barrier layers of (Al 0.7 Ga 0.3 ) 0.57 In 0.43 P, and 5nm (50 Å)-thickness layers of (Al 0.7 Ga 0.3 ) 0.52 In 0.48 P interposed between one of the barrier layers and its adjacent one, the layers having a smaller bandgap than the barrier layers. The barrier structure for electrons may be of a single layer. As shown in FIG. 3 for example, one 10nm (100 Å)-thickness layer of Al 0.57 In 0.43 P may be interposed between an active layer and a p-type clad layer. As described above, in the semiconductor laser device according to this invention the barrier layers are formed of materials which have tensile stress, whereby the barrier is raised to prevent carriers, especially electrons, from overflowing from the active layer to p-type clad layer. Consequently even when the semiconductor laser device is operated at high environmental temperatures, deterioration of its characteristics does not readily take place.

Claims: A semiconductor laser device comprising: a substrate (2); an AlGaInP or GaInP active layer (6); an n-type clad layer (5) and a p-type clad layer (7) sandwiching the active layer (6) on both sides; and a barrier structure (12, 13) against electrons overflowing from the active layer to the p-type clad layer provided between the active layer (6) and the p-type clad layer (7), characterized in that the barrier structure (12, 13) comprises at least one barrier layer (13) being formed of a (Al a Ga 1-a ) b In 1-b P, 0≤a≤1, 0.5<b≤1 material which is tensilelly strained with respect to the active and p-type clad layer, due to lattice-mismatching with said substrate (2), so as to increase the bandgap of the barrier layer and prevent electron overflow from the active layer to the p-type clad layer wherein said barrier layer (13) has a band gap (E g ) larger than those of layers sandwiching the barrier layer, and wherein the p-clad layer (7) is lattice matched with the substrate. A semiconductor laser device according to claim 1, wherein the active layer (6) is lattice matched with the substrate. A semiconductor laser device according to claim 1 or 2, wherein the barrier structure includes a single barrier layer (13). A semiconductor laser device according to claim 1 or 2, wherein the barrier structure is a multi-barrier structure (12) including barrier layers (13) and layers (14), each of which comprises a material having a narrower bandgap than the barrier layers (13), and each of the layer (14) is being interposed between one of the barrier layers (13) and an adjacent one thereof. A semiconductor laser device according to claim 4, wherein the multi-barrier structure is a multi-quantum barrier structure (12) including well layers (14) interposed between one of the barrier layers (13) and an adjacent one thereof. A semiconductor laser device according to claim 4, wherein the layers (14) between the barrier layers (13) are compressively strained due to lattice-mismatching with the substrate (2). A semiconductor laser device according to any of claims 4 to 6, wherein a material of the active layer (6) is AlGaInP, that of the barrier layers (13) is p-type (Al a Ga 1-a ) b In 1-b P, and that of the layers (14) between the barrier layers is p-type (Al c Ga 1-c ) d In 1-d P with 1≥b>0.5≥d≥0.

Inventors: YOSHIDA ICHIRO, YOSHIDA, ICHIRO, Yoshida, Ichiro, c/o Yokohama Works of Sumitomo
Applicants: SUMITOMO ELECTRIC INDUSTRIES, SUMITOMO ELECTRIC INDUSTRIES, LIMITED
Application year: 1992
Main classification: H01S3
IPC codes: H01S5