Semiconductor lasers

Abstract: A semiconductor laser having a plurality of heterostructure layers (22,24,26,28) including at least one active layer for production and amplification of coherent radiation includes an integrated amplifier (10′). The amplifier includes a contact set and a mask layer (40) to shape a lateral gain profile, through control of injected carriers, in the active region of the amplifier. The shaped lateral gain profile matches the amplitude maxima and minima of a fundamental mode of the semiconductor laser, which reduces modal distortion and improves efficiency. The contact of the integrated amplifier is also shaped to match the width of an expanding beam from the laser into and through the amplifier. Various lenses integrated into an outlet of the amplifier can effect collimation or magnification/focussing. In one embodiment, the integrated lens includes a separately addressable and controllable contact to control the focal length of the integrated lens dynamically, to permit spot size modulation and dynamic correction of focussing errors.

Description: This invention relates to semiconductor lasers and more specifically to an integration of a diode laser with a traveling-wave semiconductor optical amplifier, wherein the amplifier has a gain profile spatially shaped to improve output beam control and incorporates an integrated lens. Conventional semiconductor lasers emit coherent radiation having particularized transverse electric (TE) modal characteristics. For many applications, the emitted coherent radiation is unsatisfactory because it does not offer sufficient power to meet minimum requirements. Typically, a mode designated as TE 0,0 provides greatest power and has other desirable attributes, therefore operation of semiconductor lasers to emit radiation having this fundamental mode is desirable. Increasing the power output of a semiconductor laser by more energetic pumping often results in an addition of unwanted higher order modes to the output beam of the laser. These unwanted modes limit the effectiveness of increasing output power in this fashion. In response to a desire for greater power in the fundamental mode, semiconductor laser designers provide amplifiers coupled to the semiconductor laser outlet which boost the effective power output from the semiconductor laser. These amplifiers, while effectively boosting output power, are not optimally efficient because of coupling losses. These amplifiers can also distort the fundamental mode output from the laser if any modal mismatch exists at the entrance to, or in the gain of, the amplifier section. Contributing to a difficulty of providing suitable amplifiers is a severity of the divergence of the laser beam. The present invention provides a method and apparatus for improving beam control in an integrated semiconductor laser and power amplifier. Integration of the amplifier with the semiconductor laser improves efficiency of the amplifier section. Particular shaping of the amplifier section, especially a contact of the amplifier section, and a spatial tailoring of the gain profile of the amplifier section, provide improved power performance and decreased levels of output beam modal distortion. Integration of a lens at an outlet of the amplifier section provides an ability to collimate or focus an output beam and in one embodiment, the integrated lens has a adjustable focal length. US-A-4 780 879 discloses a semiconductor laser device having a stripe-shaped active region defined between a pair of end surfaces. At least one of the end surfaces has a curved cross-section in a plane which is parallel to the active region. The stripe of the active region has a width such that a single transverse mode and multi-longitudinal mode can be produced. The laser device emits a beam which has a small spot size and little astigmatism. US-A-4 791 646 describes a method of providing an optoelectronic device in which the spatial gain profile within the device is tailored to provide a nearly two-dimensional spatial gain profile within the device. A laser produced by the method described is capable of high power operation with very narrow, single lobed far field patterns. US-A-5 003 550 discloses a monolithic integrated device which comprises a single mode semiconductor diode laser with an amplifier in tandem therewith. The laser includes an active region in which light waves are generated. A waveguide is located proximate to the active region and has a pair of Bragg reflectors at each end thereof to provide feedback of the light waves. The amplifier may be a flared waveguide or a branching network of single mode waveguides. According to one aspect of the invention, there is provided a monolithic semiconductor structure divided into a laser part and an amplifier part. The laser part and the amplifier part have a plurality of semiconductor heterostructure layers disposed over a substrate. At least one layer of each part is an active region for light amplification and propagation under lasing conditions to produce an electromagnetic wave having a particular mode characterized by spatially distributed amplitude maxima and minima. Two sets of contacts control operation of the integrated laser and amplifier part. A first contact set, coupling a first and a second surface of the laser part, receives a first voltage and facilitates application of a first electrical forward bias to the layers of the laser part causing the laser part to emit an electromagnetic wave having a particular mode. A second contact set, coupling a first and a second surface of the amplifier part, receives a second voltage and facilitates application of a second electrical forward bias to the layers of the amplifier part, causing the active region of the amplifier part to produce a population inversion of a plurality of carriers which amplify the electromagnetic wave as it expands during propagation through the active region. In one preferred embodiment, the second contact set is shaped to match a divergent beam of the coherent radiation emitted from the laser part. The preferred embodiment disposes a mask between one contact of the second contact set and the active region of the amplifier part. The mask tailors a spatial gain profile of the active region of the amplifier part to provide a non-uniform spatial distribution of the plurality of carriers in the active region. The non-uniform spatial distribution of the plurality of carriers results in variable densities, with the shaping of spatial distribution creating regions of highest densities corresponding to amplitude maxima of the particular mode of the electromagnetic wave. Lowest densities of the plurality of carriers correspond to amplitude minima of the particular desired mode of the electromagnetic wave. Another aspect of the present invention includes a lens integrated at an outlet of the amplifier part. The lens collimates the amplifier output by placing the output plane of the amplifier at a focal point of the lens. The lens will alternatively focus the beam to a magnified image of the laser outlet at a particular distance from the lens by appropriate shaping of the lens. An additional aspect of the present invention provides an integrated lens part and amplifier part with separate contacts to the lens part. The additional contact controls the focal length of the lens. Electrical communication of different bias voltages controls a plurality of carriers injected into the lens part, which adjusts the index of refraction of the lens part. This adjustable index of refraction allows an image of the laser outlet, that is the amplifier inlet, to be focussed at an electronically controllable distance. The present invention offers advantages over existing systems because of the provision of a varied density of carriers within the amplifier part, with the carrier densities matching characteristics of a particular mode of a beam of laser radiation. With regions having densest carriers corresponding to mode maxima, and regions having sparsest carriers, corresponding to mode minima, mode distortion is minimized and efficiency of the amplifier is increased. The integrated lens permits efficient collimation or focussing, while a electronically controllable focus length for the lens permits dynamic correction of an image distance as well as modulation of the focal spot size. The dynamic correction and modulation would be useful in many printing applications. The method according to the present invention is defined by claim 1. The monolithic structure according to the present invention is defined by claims 5 and 10. The present invention will now be described by way of example with reference to the accompanying drawings in which: Fig. 1 is an enlarged view of a profile of a semiconductor heterostructure 10; Fig. 2 is a top view of a preferred embodiment of the present invention illustrating an integrated semiconductor laser heterostructure 10 and an integrated semiconductor amplifier part 10'; Fig. 3A is an enlarged view of a profile of the integrated semiconductor amplifier part 10' illustrating a mask layer 40 interposed between a top contact 30' of the amplifier part and the cap layer 28; Fig. 3B is a top view of one preferred embodiment for the mask layer 40 using a plurality of open dots of varying size and density to control the carrier density in the active region 24 of the amplifier part; Fig. 3C is another preferred embodiment for a mask layer 40' of the present invention; Figs. 4A-4C are graphs illustrating particular phenomena relative to the active region 24 of the amplifier part: specifically: Fig. 4A is a graph of a TE 0,0 fundamental wave of the type emitted by the active region 24 of the heterostructure 10 showing amplitude versus spatial position at a particular cross-sectional area of the amplifier part 10' having an upper contact 30' with a width W i ; Fig. 4B is a graph, corresponding to the graph of Fig. 4A, illustrating a concentration of carriers in the active region 24 of the amplifier part 10' under the upper contact 30' versus spatial position for an amplifier part 10' without the mask layer 40 and Fig. 4C is a graph, corresponding to the graph of Fig. 4A, illustrating a concentration of carriers in active region 24 of the amplifier part 10' under the upper contact 30' versus a spatial position for the amplifier part 10' having the mask layer 40; Fig. 5 is a top view of a preferred embodiment of the present invention illustrating an integrated semiconductor laser heterostructure 10 and an integrated semiconductor optical amplifier part 10' with an output lens 50 integrated with the amplifier part 10' for collimating an output beam; Fig. 6 is a top view of a preferred embodiment of the present invention illustrating an integrated semiconductor laser heterostructure 10 and an integrated semiconductor optical amplifier part 10' with an output lens 50' integrated with the amplifier part 10' for focussing an output beam and Fig. 7 is a top view of a preferred embodiment of the present invention illustrating an integrated semiconductor laser heterostructure 10 and an integrated semiconductor optical amplifier part 10' having an output lens 60 provided with a separate contact set for an electronically controllable focal length. Fig. 1 is an enlarged view of a profile of a semiconductor heterostructure 10 including a plurality of epitaxially deposited layers 22-28 on a substrate 20. As one example of a semiconductor laser structure, the heterostructure 10 is fairly representative, but other laser semiconductor structures are possible. In the preferred embodiment, the heterostructure 10 includes the substrate 20 made up of n-GaAs having consecutively deposited epitaxial metallorganic layers 22-28. A chemical vapour deposition reactor forms the epitaxial layers, which include a first cladding layer 22, an active region 24, a second cladding layer 26, and a cap layer 28. A layer of n-Ga 1-y Al y As with y varying from 0.4 to 0.8, preferably equal to 0.40, makes up the first cladding layer 22. A layer of any of GaAs, Ga 1-x Al x As, a single quantum well layer of GaAS, or a plurality of quantum well layers of alternating layers of either GaAs and Ga 1-x Al x As or Ga 1-x Al x As and Ga 1-z Al z As where y>z>x makes up the active region 24. A layer of p-Ga 1-y Al y As makes up the second cladding layer 26, while a layer of p + GaAs makes up the cap layer 28. The preferred embodiment of the present invention includes four 12nm quantum wells of Ga 1-x Al x As, x equal to 0.05, separated by three 6nm barriers of Ga 1-z Al z As, z equal to 0.20. The active region 24 has a thickness of about 66nm. Metallic films 30 and 32 make up a set of electrical contacts to the heterostructure 10. These films can be made from any suitable materials. Fig. 2 is a top view of a preferred embodiment of the present invention, illustrating an integrated semiconductor laser heterostructure 10 and an integrated semiconductor optical amplifier part 10'. Heterostructure 10, corresponding to the laser, and heterostructure 10', corresponding to the amplifier, are integrated and, except for the differences identified below, are virtually identical. The heterostructure 10 provides a distributed feedback (DFB) or distributed Bragg reflector (DBR) laser operable by application of a particular bias voltage to the upper contact 30, to produce a population inversion of carriers in the active region 24 of the heterostructure 10. Sufficient pumping produces an output beam of coherent radiation having particular characteristics, such as modal characteristics, established by structural elements of the heterostructure 10. Integrated with the laser is an amplifier heterostructure 10'. A boundary 33 separates the upper contact 30' of the heterostructure 10' from the upper contact 30 of the heterostructure 10. The boundary 33 allows, if desired, a second particular bias, different from the particular bias of the heterostructure 10, to control operation of the amplifier, separate from the laser. As indicated in Fig. 2, the optical waveguide 36 maintains a relatively constant width t over the length of the laser. This provides a suitable resonance cavity for the laser. The width of the optical waveguide 36' has a varying width W i . The width W i expands to match the shape of the emitted radiation through the amplifier. Semiconductor lasers have a relatively large divergence angle, thus the width W i varies significantly along the length of the amplifier. The optical waveguides can be formed by layer disordering as described in US-A-4,870,652. Portions of the cap layer outside waveguides 36' and 36 are made electrically resistive, for example by proton bombardment, in order to confine the carriers to only regions 36' and 36. Fig. 3A is an enlarged view of a profile of the integrated semiconductor amplifier 10', illustrating a mask layer 40 interposed between an upper contact 30' of the amplifier and the active layer 24. A preferred embodiment is to make this pattern in cap layer 28 and a portion of the cladding layer 26 with proton bombardment to create high resistivity regions. The profile of Fig. 3A is taken at an arbitrary point along the amplifier length for a waveguide 36' width W i . The purpose of the mask layer 40 is to shape a lateral gain profile of the active region 24 of the heterostructure 10' for the laser radiation as it propagates through the amplifier. In the preferred embodiment of the present invention, an injected current through the upper contact 30' and mask layer 40 shapes the lateral gain profile to match a modal shape of the laser radiation as it expands in the amplifier. This mask layer 40' shape takes into account the index of refraction and a gain profile of the amplifier. The preferred embodiment of the present invention provides a smooth transition (lacking discontinuities) from the laser waveguide 36 to the amplifier waveguide 36'. Any discontinuities could lead to undesirable reflections from modal mismatch. The patterned cap layer 28 may be of any suitable configuration to control local current density and to vary that density across the width of the expanding laser beam. Fig. 3B is a top view of one preferred embodiment for the mask layer 40 or the patterned cap layer 28 using a plurality of open dots of varying size and density to control the carrier density in the active region 24 of the amplifier. Etching the p + GaAs cap layer 28 with suitable reagents, such as for example, H 2 SO 4 :H 2 O 2 :H 2 O::1:8:40, to produce a pattern similar to that of Fig. 3B provides an alternative mechanism for spatial tailoring of carriers in the amplifier section. The pattern of Fig. 3B is however, not shown shaped to match the expanding beam in the amplifier, but is only a schematic representation of the pattern prior to the shaping required for beam expansion. The optical waveguide 36', also matching the expanding profile of the laser beam in the amplifier, underlies this mask layer 40. In this preferred embodiment, the metal of the contact layer 30' forms an injecting ohmic contact to the cap layer 28, where the cap layer 28 has not been etched away. In those areas where the cap layer 28 has been etched away, the metal of the contact 30' forms a Schottky blocking contact to the cladding layer 26. The spatial tailoring of the gain of the active region resulting from a varying injection density increases from left to right as viewed until the midpoint of the mask layer 40, at which point it falls off again. This peak in the gain profile coincides with the amplitude maxima of the TE 0,0 wave as it propagates and expands in the amplifier. Fig. 3C is another embodiment for a mask layer 40' of the present invention. Etching or proton bombarding the cap layer 28 to produce the mask layer 40' will also produce a spatially varying gain profile across the width of the amplifier. This particular gain profile, like the profile produced by the mask layer 40 of Fig. 3B matches a fundamental mode of the laser beam as it propagates through the amplifier part. Note that in Fig. 3C, unlike Fig. 3B, the mask layer 40' is shown conforming to the profile of the expanding laser beam of the amplifier. It is also possible to form the upper contact 30' to correspond to the patterns illustrated for the mask layers in Fig. 3B and Fig. 3C without etching the cap layer 28. The thickness of the cap layer 28 and the cladding layer 26 contributes to a smoothing of the final gain profile effected in the active region of the amplifier. Other mask patterns are possible to control carrier density. One example of this method was demonstrated by Lindsey, et al. in TAILORED-GAIN BROAD-AREA SEMICONDUCTOR LASER WITH SINGLE-LOBED DIFFRACTION-LIMITED FAR-FIELD PATTERN, Electronics Letters, Vol. 21, No. 16, pg. 671, (August 1985). Another preferred embodiment of the present invention employs variably spaced and sized striped contacts running parallel to contours of the expanding mode as illustrated in Fig. 3C, for example. Other contact patterns are possible to control carrier density. Figs. 4A-4C are graphs illustrating particular phenomena relative to the active region 24 of the amplifier. Fig. 4A is a graph of a TE 0,0 fundamental wave emitted by the active region 24 of the heterostructure 10, showing amplitude versus spatial position at a particular cross-sectional area of the amplifier 10' having waveguide 36' with a width W i . Many uses of the semiconductor laser require emission and amplification of the TE 0,0 fundamental mode to maximize power and efficiency. This fundamental mode has an amplitude maximum in a middle of the laser beam, with amplitudes decreasing to minima at the beam edges. Fig. 4B is a graph, corresponding to the graph of Fig. 4A, approximately illustrating a concentration of electrons or holes in the active region 24 of the amplifier 10' under the upper contact 30' versus spatial position for an amplifier 10' without the mask layer 40. The electron or hole density is uniform across the width of the amplifier in the absence of lateral gain profile shaping. The concentration of the electrons or holes directly correspond to the gain because it is these carriers which recombine by stimulated emission to amplify the laser beam as it propagates through the active region 24 of the amplifier. This particular gain profile of Fig. 4B is inefficient and leads to modal distortion of the propagating laser beam because it does not match the shape of the expanding gaussian-like mode, especially as W i increases. Fig. 4C is a graph, corresponding to the graph of Fig. 4A, illustrating a concentration of carriers (electrons or holes) in active region 24 of the amplifier 10' under the upper contact 30' versus a spatial position for the amplifier 10' having the mask layer 40. In Fig. 4C, the desired carrier density, which corresponds to the tailored gain profile, matches the desired mode of the laser beam which, in the preferred embodiment of the present invention, is the shape of the beam illustrated in Fig. 4A. The present invention is not limited to tailoring to match the fundamental mode. If some other mode were desired, the amplitude maxima and minima in a lateral direction across the amplifier could be shaped by appropriate control over the carrier density injected into particular portions of the amplifier. Fig. 5 is a top view of a preferred embodiment of the present invention illustrating a laser heterostructure 10 and an amplifier heterostructure 10' with an output lens 50 integrated with the amplifier heterostructure 10' for collimating an output beam. Collimation of the output laser beam results from shaping an output surface of the amplifier heterostructure 10' to have a focal point f. By placement of an output plane of the laser heterostructure 10 at the focal point f (i.e. the length of the amplifier heterostructure approximately equals the focal length) collimation results. Generally speaking, providing the amplifier heterostructure 10' having an output lens with a radius of curvature R equal to (n-n')/n * f, where n is the index of refraction of the amplifier heterostructure and n' is the index of refraction of the medium into which the amplifier heterostructure 10' emits the laser radiation. For example, for collimation into air from GaAs, R is about equal to 0.72 times the focal length. Fig. 6 is a top view of an embodiment of the present invention illustrating a laser 10 and an integrated amplifier 10' with an output lens 50' integrated with the amplifier 10' for focusing an output beam. In Fig. 6, the output lens 50' provides a magnified image of the output laser plane at the virtual boundary 34. For example, positioning the output plane at (n + n') * f focuses the output plane image as shown in Fig. 6, such that the object and image distances are equal. As the theoretical magnification is less than 1, coherent wave propagation principles should be used to calculate the spot size. For a GaAs device having a focal length about equal to 500µm, the radius of curvature of the output lens 50' is about 360µm. This configuration provides an image distance equal to the object distance, both about 640µm. Other shapes and configurations for an outlet lens integrated into an output of the amplifier are possible. For the output lenses of Fig. 5 and Fig. 6, etching, using wet chemicals, reactive ions or plasmas, will produce a desired shape for the lens. Possible uses for output lenses with other shapes include correction for wavefront distortion from the gain medium of the amplifier 10'. In some instances it may be desirable to reduce reflections off the concave surface of the lenses. An anti-reflective coating on the lens will reduce these reflections. Fig. 7 is a top view of an embodiment of the present invention illustrating a laser 10 and an amplifier 10' having an output lens 60 provided with a separate contact set 62 for electronically controlling focal length. The independently addressable upper contact 62 provides a mechanism to vary the index of refraction for the lens 60. Controlling the density of carriers injected into an active region 24 of the lens 60 varies the index of refraction. The configuration of the lens 60, concave-plano, provides expected control over a focussing length of the output beam from about 30R to about 86R, with R being a radius of curvature of the concave length, and equal to 300-400µm. It may be necessary to increase the bandgap energy of the active layer 24 of the output lens 60 to avoid excessive loss in the lens caused by excitation of electrons from valence to conduction band in the semiconductor material. Impurity induced disordering after growth, as described in US-A-4,802,182 or in situ laser induced desorption during growth, as described in US-A-4,962,057 are examples of methods to increase the bandgap energy, if desired. The electronically controllable focal length permits dynamic correction of the image distance as well as modulation of a focal spot size. These preferred embodiments using the integrated lens are useful in printing applications. The particular configurations illustrated for the lenses in Fig. 5 through Fig. 7 are representative of preferred embodiments, but other shapes are possible. Other designs can provide increased control of image distance, or spot size, or both.

Claims: A method for controlling the divergence of a beam of coherent radiation emitted by a semiconductor structure having a laser part (10) in cascade with an optical part (10'), the laser and optical parts (10,10') having a plurality of layers (22,24,26,28) of semiconductor material disposed on a substrate (20), at least one of the layers (22,24,26,28) of each part being an active region (24) for light amplification and propagation under lasing conditions, the method comprising the steps of: using a semiconductor structure in which the laser part (10) and the optical part (10') are monolithic; and applying an electrical forward bias to the layers (22,24,26,28) in the laser part (10) to cause the laser part (10) to emit a beam of radiation having a particular mode; characterised in that the method includes the step of effecting a laterally-varying index profile of the optical part (10') to match a modal shape of the particular mode of the beam during lateral expansion of the beam while travelling in the optical part (10'), the optical part (10') comprising an amplifier having a spatially-varying gain profile, and in that the gain profile is obtained by controlling the distribution of current injected into the optical part (10'). The method as claimed in claim 1, comprising the further step of affecting the divergence of the beam by shaping an outlet surface (50) of the optical part (10'). The method as claimed in claim 1 or 2, in which the distribution of current is controlled by shaping the size and/or distribution of electroconductive windows in a mask layer (40). The method as claimed in any preceding claim applied to a semiconductor structure of which the optical part terminates in a lens (60) provided with a separate set of contacts (62), including the step of injecting charge carriers into the lens (60) via the contacts (62) so as to adjust the refractive index of the lens (60). A monolithic semiconductor structure comprising: a laser (10) and an optical amplifier (10') having a plurality of semiconductor layers (22, 24, 26, 28) on a substrate (20), at least one of the layers (22,24,26,28) in the laser and amplifier being an active region (24) for light amplification and propagation under lasing conditions; first contact means (30), electrically coupled to only the laser (10), for applying an electrical forward bias to the layers (22,24,26,28) in the laser (10) to cause the laser to emit a beam of radiation having a particular mode, and second contact means (30'), electrically coupled to only the amplifier (10'), for effecting a spatially-varying gain profile of the amplifier to match a modal shape of the beam emitted by the laser during expansion thereof while travelling in the amplifier (10'); characterised in that the second contact means (30') is patterned to control current flow to the amplifier (10') to provide the gain profile thereof. The structure as claimed in claim 5, in which the second contact means (30') has in it a plurality of open areas of different size, shape and/or distribution. The structure as claimed in claim 5, in which the second contact means (30') is in strips of varying width and spacing from adjacent strips. The structure as claimed in any of claims 5 to 7, in which the outlet face (50) of the amplifier (10') is lenticular. The structure as claimed in any of claims 5 to 7, in which the amplifier (10') has an outlet lens (60) through which the beam leaves the structure. A monolithic semiconductor structure comprising: a laser (10) and an optical amplifier (10') having a plurality of semiconductor layers (22, 24, 26, 28) on a substrate (20), at least one of the layers (22,24,26,28) in the laser and amplifier being an active region (24) for light amplification and propagation under lasing conditions; first contact means (30), electrically coupled to only the laser (10), for applying an electrical forward bias to the layers (22,24,26,28) in the laser (10) to cause the laser to emit a beam of radiation having a particular mode, and second contact means (30'), electrically coupled to only the amplifier (10'), for effecting a spatially-varying gain profile of the amplifier to match a modal shape of the beam emitted by the laser during expansion thereof while travelling in the amplifier (10'); characterised in that the flow of current from the second contact means (30') to the amplifier (10') is controlled by passing it through a mask layer (40) of non uniform conductivity or resistivity. The structure as claimed in any one of claims 5 to 10, in which the amplifier (10') includes an optical waveguide (36') for adjustably controlling the modal shape of the beam while it is in the amplifier (10'). The structure as claimed in any one of claims 5 to 11, in which the particular mode is a TE 0,0 wave.

Inventors: PAOLI THOMAS L, PAOLI, THOMAS L.
Applicants: XEROX CORP, XEROX CORPORATION
Application year: 1992
Main classification: H01S3
IPC codes: H01S5, G02B6, H01S3