Method of treating an insulating film in a semiconductor device and apparatus therefor

Abstract: The insulating film formed by CVD while heating is irradiated with ultraviolet rays. The process may be repeated. The apparatus therefore is also described.

Description: BACKGROUND OF THE INVENTION (1) Industrial Field of Utilization The present invention relates to an apparatus for manufacturing semiconductor and a method for manufacturing a semiconductor device, and more particularly to an apparatus for manufacturing semiconductor and a method for manufacturing a semiconductor device including a method for reforming an insulating film formed by a low temperature CVD method. (2) Prior Art There are a variety of systems in a Chemical Vapor Deposition (CVD) method for forming an insulating film, but a plasma CVD method and a thermal CVD method have been mainly used in recent years. In a very large scale integrated circuit (VLSI), among others a DRAM, an insulating film formed by a plasma CVD method is undesirable since it has inferior step coverage because of refinement and densification and impurities such as carbon (C) and the like are contained in a formed insulating film. Thus, application of a thermal CVD method superior in step coverage, in particular a thermal CVD method capable of forming a film at a low temperature so as not to exert thermal influence upon others is attracting attention in forming a refined and densified DRAM. There have been two thermal CVD methods as a CVD method capable of forming a film at a low temperature as follows. 1 ○ reaction gas: mixed gas of mono-silane (SiH 4 )/oxygen (O 2 ), reaction temperature: 350 to 450°C. 2 ○ reaction gas: mixed gas of organic silane(TEOS)/ozone (O 3 ), reaction temperature: 350 to 450°C. Further, as a CVD method superior in step coverable and capable of forming a film at a low temperature, an optical CVD method for forming a film while emitting ultraviolet rays is also attracting attention other than the above-described thermal CVD method. When a design rule of a device becomes 1 µm or less, however, a film quality of an interlevel insulating film and the like exerts a big influence upon device characteristics, and following problems have been caused newly on an interlevel insulating film formed by the low temperature CVD method. Namely, problems affecting reliability by 1 ○ lowering of dielectric breakdown strength, 2 ○ increase of leakage current, 3 ○ corrosion of an Aℓ film, etc. and the like are caused sometimes because of such reasons that: 1 ○ the density of the formed insulating film is low, 2 ○ bonds such as moisture (H 2 O) and Si-OH are contained in the formed insulating film, and 3 ○ bonds such as Si-H are contained sometimes. In order to solve such problems, it is required: 1 ○ to form a film at a highest possible temperature, 2 ○ to form a film at a lowest possible growth speed, 3 ○ to increase O 3 concentration to the highest possible in a method using TEOS, and 4 ○ to anneal a film at the highest possible temperature after film formation. However, these countermeasure have limits, respectively. For example, when an interlevel insulating film is formed by covering a lower Aℓ film on a Si substrate, it is undesirable to increase the temperature to 450°C or higher from viewpoints of preventing deterioration of contact characteristic between the Aℓ film and the Si substrate and preventing generation of hillocks and the like. Further, the growth speed cannot be reduced excessively in order to secure mass productivity. Furthermore, there is such a problem in the optical CVD method that the growth rate and the film quality of the generated film are lowered because of a generated film sticks to a radiating window of ultraviolet rays of a chamber while forming a film, producing a blur thereon, and radiation effect of ultraviolet rays is reduced. Further, since the original growth rate is low in the optical CVD method, there is also a problem that this method is not suitable for mass production. FR-A-2 543 581 describes a process for forming an insulating film on a semiconductor substrate, wherein an oxide film is first formed and is then treated using ultraviolet radiation. EP-A-0 272 141 discloses a multichamber system, wherein the various chambers are interconnected and one chamber is preferably used for film deposition and the other chambers are used for post-deposition treatment of the grown layers. SUMMARY OF THE PRESENT INVENTION It is an object of the present invention which has been made in view of such conventional problems to provide a method for manufacturing a semiconductor device capable of improving a film quality of an insulating film formed by a CVD method which is able to form a film at a low temperature and also of maintaining mass productivity. The object is achieved by a method for manufacturing a semiconductor device, wherein, after forming an insulating film on a body by a chemical vapor deposition (CVD) method, the film quality of the insulating film is improved by contacting the insulating film with ammonia and simultaneously irradiating the insulating film with ultraviolet rays while heating the insulating film. The object is furthermore achieved by a method for manufacturing a semiconductor device, wherein the steps of depositing contacting and applying ultraviolet rays to the insulating film are repeated a plurality of times after forming an insulating film on a body to be formed by a chemical vapor deposition method, whereby the thickness of the film is increased gradually, to obtain an insulating film having a predetermined film thickness with the film quality improved. Thus the ultraviolet rays emitting processing is performed in a processing gas atmosphere containing ammonia (NH 3 ) gas. In a preferred embodiment the chemical vapor deposition is performed under atmospheric pressure. In a preferred embodiment the chemical vapor deposition is performed under reduced pressure. In a preferred embodiment the chemical vapor deposition is performed under such conditions that: the reaction gas is a mixed gas containing mono-silane (SiH 4 )/oxygen (O 2 ), and temperature is 350 to 450°C, and any one of a SiO 2 film, a PSG film, a BSG film and a BPSG film is formed as the insulating film. In a preferred embodiment the chemical vapor deposition is performed under such conditions that: the reaction gas is a mixed gas containing organic silane (containing alkoxy compound of silicon, siloxane, alkyl-silane and the like)/ozone (O 3 ), and temperature is 350 to 450°C, and any one of a SiO 2 film, a PSG film, a BSG film and a BPSG film is formed as the insulating film. In a preferred embodiment the chemical vapor deposition is performed under such conditions that: the reaction gas is a mixed gas containing organic compound such as tantalum (Ta)/ozone (O 3 ), temperature is 300 to 450°C, and a Ta 2 O 5 film is formed as the insulating film. The apparatus for manufacturing a semiconductor comprises the features as cited in claim 8. In a preferred embodiment a plurality of sets of processing systems including the vapor deposition chamber and the ultraviolet rays processing chamber as one set are connected so that the chemical vapor deposition and the ultraviolet rays emitting processing may be performed alternately in consecutive order. The apparatus can comprise moving means for moving a body to be formed continuously, said body passing the above-described plurality of sets of processing systems so that it may be possible to perform the chemical vapor deposition and the ultraviolet rays emitting processing alternately in consecutive order while moving the body to be formed continuously. The operation of the present invention will be described with reference to the results of experiments made by the inventor of the present application. A sample used in the experiments was produced as follows. Namely, a CVD SiO 2 film having a film thickness of 2,000 Å is formed on a SiO 2 film formed by thermal oxidation on a Si substrate (wafer) under such conditions that: 1 ○ reaction gas: mixed gas (O 3 concentration: 1% in O 2 ) of organic silane (TEOS)/ozone (O 3 ), 2 ○ wafer temperature: 400°C, and 3 ○ forming speed: 1,000 Å/min. Then, after this wafer is heated with a heater and the wafer temperature is maintained at approximately 400°C, mixed gas of oxygen gas/nitrogen gas, ozone gas or ammonia (NH 3 ) gas is introduced into a chamber 12 through a gas inlet port 13 and a mercury lamp is turned on, thus maintaining the state for a predetermined period of time. Next, the following investigation was made on the CVD SiO 2 film thus processed. Explanation will be made on the comparative case of mixed gas of oxygen gas/nitrogen gas and the claimed case of ammonia gas separately. (1) In the case of mixed gas of oxygen gas/nitrogen gas (a) Type of investigation 1 ○ Investigation on the minuteness of a CVD SiO 2 film with an etching rate using an HF water solution, and 2 ○ investigation on the composition of a CVD SiO 2 film with an infrared absorption spectrum have been performed. Besides, similar investigation has also been made on a CVD SiO 2 film which is not irradiated with ultraviolet rays for the purpose of comparison, (b) Results of investigation First, the result of investigation on the minuteness of a CVD SiO 2 film by an etching rate using an HF water solution will be described. According to the result of investigation, the etching rate of the CVD SiO 2 film irradiated with ultraviolet rays becomes smaller as compared with the case of a CVD SiO 2 film which is not irradiated with ultraviolet rays and approaches to the etching rate of a thermal oxidation film. Next, the result of investigation on the composition of a CVD SiO 2 film by an infrared absorption spectrum will be described. Fig. 12 shows the result of investigating the existence of H 2 O on a sample processed by irradiation with ultraviolet rays under a condition that the wafer temperature is constant at 400°C, in which variation of absorbance against the wave number (nm - ) is displayed with the emitting time as a parameter. Besides, the absorbance along the axis of ordinates is assigned optionally with respect to respective lines corresponding to respective parameters. According to the result of investigation, it has been found that the peak showing H 2 O becomes smaller as the processing time gets longer for the CVD SiO 2 film irradiated with ultraviolet rays. The above-described two different results of investigation show that H 2 O ceases to exist by irradiation with ultraviolet rays, and the CVD SiO 2 film becomes more minute. Besides, although it is not shown in Fig. 12, it is considered that bonds such as Si-OH and Si-H cease to exist at the same time by irradiation with ultraviolet rays, which is deemed to contribute to densification of the CVD SiO 2 film. This is considered to be attributed to a fact that impurities such as -OH and -H bonded with H 2 O or Si on the surface of the CVD SiO 2 film and inside the CVD SiO 2 film are discharged outside the CVD SiO 2 film by the energy of ultraviolet rays or interaction between irradiation with ultraviolet rays and the heating temperature as shown in Fig. 11(a), thereby to densify the CVD SiO 2 film, and furthermore, dangling bond of Si is buried with oxygen atoms by the operation of oxygen gas activated by irradiation with ultraviolet rays as shown in Fig. 11(b) by using gas containing oxygen as the processing gas in case of irradiation with ultraviolet rays, thereby to further promote densification of the CVD SiO 2 film. Besides, mixed gas of oxygen gas/nitrogen gas is used in the comparative experiment as processing gas, but similar results are also obtainable when ozone gas is used. (2) In the case of ammonia gas: (a) Type of investigation 1 ○ Investigation on the moisture content in a CVD SiO 2 film by an electrochemical method, and 2 ○ investigation on the composition of a CVD SiO 2 film by an infrared absorption spectrum have been performed. (b) Results of investigation First, the result of investigation on the moisture content in a CVD SiO 2 film by an electrochemical method will be described. Fig. 13(a) shows the result of investigation on the moisture content in the CVD SiO 2 film by an electrochemical method, and shows variation of the moisture content (wt %) in the CVD SiO 2 film against the ultraviolet rays emitting time. Besides, similar investigation was also made on a CVD SiO 2 film which was not irradiated with ultraviolet rays for the purpose of comparison. According to the results of investigation, the moisture content in the CVD SiO 2 film irradiated with ultraviolet rays is reduced approximately half as compared with the case of a CVD SiO 2 film which is not irradiated with ultraviolet rays. Next, the results of investigation on the composition of a CVD SiO 2 film by an infrared absorption spectrum will be described. Fig. 13(b) shows the result of investigating the existence of H 2 O with respect to a sample processed by irradiation with ultraviolet rays under a condition that the temperature is constant at 400°C, in which variation of absorbance against the wave number(nm -1 ) is displayed with the ultraviolet rays emitting processing time as a parameter. Besides, the absorbance along the axis of ordinates is assigned optionally with respect to respective lines corresponding to respective parameters. According to the results of investigation, it has been found that the size of a peak (swelling) showing H 2 O becomes smaller rapidly and ceases to exist in processing for a short period of time for about several minutes for a CVD SiO 2 film irradiated with ultraviolet rays in ammonia gas atmosphere. Besides, in the case of processing in mixed gas atmosphere of oxygen gas/nitrogen gas, the peak (swelling) does not completely cease to exist until processing is performed for a substantially long period of time. On the contrary, however, in the case of processing in ammonia gas atmosphere, the peak (swelling) ceases to exist completely in a short period of time, which had a big effect on the removal of H 2 O. The above-described two different results of investigation show that H 2 O ceases to exist in a short period of time by irradiation with ultraviolet rays in ammonia gas atmosphere, thus making it possible to improve the minuteness of the CVD SiO 2 film. Besides, the bonds such as Si-OH and Si-H exist after film formation, but it is considered that such bonds have also ceased to exist by irradiation with ultraviolet rays in ammonia gas atmosphere, which contributes to improve densification of the CVD SiO 2 film. As described above, it is possible to have the bonds such as H 2 O, Si-OH and Si-H cease to exist by processing by irradiation with ultraviolet rays applied to the manufacturing method of the present invention so as to increase the minuteness of the CVD SiO 2 film formed at a low temperature and aim at improvement of the film quality. This is also applicable to a CVD SiO 2 film formed by using that containing alkoxy compound of silicon, siloxane, alkyl-silane and the like as organic silane, a CVD SiO 2 film formed by using SiH 4 -O 2 gas and a Ta 2 O 5 film formed by using mixed gas of organic compound such as Ta/O 3 . In particular, by using gas containing oxygen, ozone gas or ammonia gas as processing gas, it is possible to aim at further improvement of the minuteness of a CVD SiO 2 film and further improvement of the film quality by the operation of these processing gases activated by irradiation with ultraviolet rays. Furthermore, since a CVD SiO 2 film is formed independently, it is possible to maintain mass productivity, being different from an optical CVD method. Moreover, a CVD SiO 2 film having a comparatively thin film thickness of approximately 2,000 Å is used, but a CVD SiO 2 film having a thicker film thickness may be used, and it is possible to form a CVD SiO 2 film having a thick film thickness with the film quality further improved by repeating a work of vapor deposition/irradiation with ultraviolet rays. Further, it is possible to continuously perform a series of processing for forming a CVD SiO 2 film having improved film quality, thus making automation also possible by using an apparatus for manufacturing a semiconductor of the present invention in which the vapor deposition chamber and the ultraviolet rays processing chamber are connected with each other as an apparatus for manufacturing a semiconductor applied to the above-described manufacturing method. Moreover, it is possible to perform a series of processing continuously and repeatedly because a plurality sets of processing systems including a vapor deposition chamber and an ultraviolet rays processing chamber as one set are connected with one another. With this, it is possible to form a CVD SiO 2 film and the like having a thick film thickness with the film thickness further improved. Besides, mass productivity is also improved by forming a film on a body to be formed while moving the body to be formed by means of continuous transfer type moving means such as a belt conveyor. BRIEF DESCRIPTION OF THE DRAWINGS Fig.1 shows schematic block diagrams for explaining a first embodiment of an apparatus for manufacturing a semiconductor of the present invention; Fig. 2 is a schematic block diagram for explaining a second embodiment of an apparatus for manufacturing a semiconductor of the present invention; Fig. 3 is a schematic diagram for explaining a third embodiment of an apparatus for manufacturing a semiconductor of the present invention; Fig. 4 is a schematic diagram for explaining a fourth embodiment of an apparatus for manufacturing a semiconductor of the present invention; Fig. 5 is a schematic diagram for explaining a reaction gas supply apparatus used in an embodiment of an apparatus for manufacturing a semiconductor of the present invention; Fig. 6 is a schematic diagram for explaining another reaction gas supply apparatus used in an embodiment of an apparatus for manufacturing a semiconductor of the present invention; Fig. 7 shows sectional views for explaining a fifth and a sixth embodiments of a method for manufacturing a semiconductor device; Fig. 8 shows sectional views for explaining a seventh embodiment of a method for manufacturing a semiconductor device; Fig. 9 shows sectional views for explaining an eighth embodiment of a method for manufacturing a semiconductor device with reference to an example applied to forming a capacitor insulating film of a DRAM; Fig. 10 is a sectional view for explaining a ninth embodiment of a method for manufacturing a semiconductor device with reference to an example applied to forming a capacitor insulating film of a DRAM; Fig. 11 shows sectional views for explaining a ninth embodiment of a method for manufacturing a semiconductor device of the present invention with reference to forming a capacitor insulating film of a DRAM; Fig. 12 is a comparison explanatory diagram showing the result of investigation on an infrared absorption spectrum of a CVD SiO 2 film processed by irradiation with ultraviolet rays in gas atmosphere containing oxygen according to a method for manufacturing a semiconductor device not covered by the present invention; and Fig. 13 shows comparison explanatory diagrams showing the result of investigation on moisture content and infrared absorption spectrum of a CVD SiO 2 film processed by irradiation with ultraviolet rays in ammonia gas atmosphere according to a method for manufacturing a semiconductor device of the present invention. DETAILED DESCRIPTION OF THE INVENTION Embodiments of the present invention will be described hereinafter with reference to the drawings. (1) Embodiments of an apparatus for manufacturing a semiconductor of the present invention. 1 ○ The first embodiment Figs. 1(a) and (b) are schematic block diagrams for explaining a first embodiment of an apparatus for manufacturing a semiconductor applicable to a method for manufacturing a semiconductor device of the present invention. Fig. 1(a) is a top view of an apparatus for manufacturing a semiconductor device of the present invention, and Fig. 1(b) is a side view thereof. Here, partition walls among respective chambers and valves for performing opening and closing among respective chambers are omitted. In Figs. 1(a) and (b), a load/unload chamber 21, a CVD reaction chamber (a vapor deposition chamber) 22 and a UV processing chamber (an ultraviolet rays processing chamber) 23 are connected in this order, and a wafer 1 or 9 is moved to the load/unload chamber 21 by means of a robot 24 and the like. Thus, a series of processing including chemical vapor deposition (CVD) and ultraviolet rays emitting processing can be performed successively. A reference numeral 24 in the figure represents a robot for conveying the wafer to the load/unload chamber 21, and the conveying robot 24 or a wafer holder 25 are moved up and down so that the wafer 1 or 9 may be delivered to the wafer holder 25 in the load/unload chamber 21. In this case, the wafer 1 or 9 is held by the wafer holder 25 by means of a vacuum chuck or an electrostatic chuck so that the film forming face thereof faces downward. In addition, the wafer holder 25 includes a heater for heating and thermal insulation formed in one body therewith. Further, 26 represents a gas shower provided in the CVD reaction chamber 22 for blowing out reaction gas upward toward the film forming surface of the wafer 1 or 9. A reaction gas piping is connected at a reaction gas inlet port 27 of the gas shower 26, and required mixed gas is supplied by means of a reaction gas supply source shown in Fig. 5 or Fig. 6. Then, the reaction gas introduced into the reaction gas inlet port 27 blows out after being introduced into the gas shower 26, and the gas after reacting on the film forming face of the wafer 1 or 9 can be discharged outside the CVD reaction chamber 22 through a gas exhaust port 29 of a gas gathering unit 28 provided so as to surround the periphery of the gas shower 26. Furthermore, 30 represents a mercury lamp provided in the UV processing chamber 23 for radiating ultraviolet rays, which radiates ultraviolet rays upward toward the film forming face of the wafer 1 or 9. Further, it is made possible to introduce processing gas which contributes to improvement of the film quality through a processing gas inlet port 32 of a mercury lamp holder 31. Besides, a gas exhaust port not shown for discharging introduced processing gas outside the chamber is provided in the UV processing chamber. As described above, according to the first embodiment of an apparatus for manufacturing a semiconductor of the present invention, it is possible to perform a series of processing for forming a film of good film quality including vapor deposition and irradiation with ultraviolet rays successively, and thus also making automation possible since the CVD reaction chamber 22 and the UV processing chamber 23 are connected with each other. Further, since the UV processing chamber 23 is provided with the processing gas inlet port 32, it is possible to perform processing by irradiation with ultraviolet rays in processing gas atmosphere which contributes to improvement of the film quality. With this, it becomes possible to form a film of still better film quality. Furthermore, it is possible to form a CVD film under one of atmospheric pressure and reduced pressure by providing switching means among respective chambers 21, 22 and 23, thereby to control the pressure in the CVD reaction chamber 22 independently. Further, it becomes possible, by making a round trip a plurality of times between the CVD reaction chamber 22 and the UV processing chamber 23, to form a film having a film thickness corresponding to the number of times of the round trips. Next, the reaction gas supply source for supplying reaction gas to the gas shower 26 will be described with reference to Fig. 5 and Fig. 6. (A) Supply source of mixed gas containing organic silane (TEOS)/ozone (O 3 ) Fig. 5 is a schematic diagram of an apparatus for supplying mixed gas containing TEOS/ozone. In Fig. 5, 34a represents a gas piping connected to the reaction gas inlet port 27 of the gas shower 26 for instance for feeding the reaction gas to the gas shower 26, and gas pipings 34b, 34c, 34e and 34g for flowing ozone gas, nitrogen gas containing a TEOS solution and other gases are connected thereto. 34b represents a gas piping for flowing one of oxygen gas and ozone gas generated by an ozonizer, 34c represents a gas piping for flowing nitrogen gas containing a TEOS solution, 34e represents a gas piping for flowing nitrogen gas containing TMPO or TMOP (Trimethylphosphate: PO(OCH 3 ) 3 : referred to hereinafter as TMOP), and 34g represents a gas piping for flowing nitrogen gas containing a TEB (Triethylborate) solution. Valves 35a to 35c, 35e and 35g for controlling conduction/suspension are provided in respective gas pipings 34b, 34c, 34e and 34g. Further, 34d, 34f and 34h represent gas pipings for feeding nitrogen gas to the TEOS solution, the TMPO solution and the TEB solution, respectively, and valves 35d, 35f and 35h for controlling conduction/suspension are provided in respective gas pipings 34d, 34f and 34h. Furthermore, 38 represents an ozonizer connected to the gas piping 34b, 37a to 37c represent heaters for heating and thermally insulating the TEOS solution, the TMPO solution and the TEB solution, respectively, and 36a to 36d represent mass flow controllers for controlling the flow rates of oxygen gas and nitrogen gas as carrier gas. As described above, it is possible to form a SiO 2 film, a PSG film, a BSG film, a BPSG film or the like by connecting the above-described reaction gas supply source to the gas shower. Besides, TEOS is used as organic silane, but those that contain alkoxy compound of silicon, siloxane, alkylsilane and the like may also be used. (B) Supply source of mixed gas of organic compound such as tantalum/ozone Fig. 6 is a schematic diagram showing an apparatus for feeding mixed gas containing organic compound such as tantalum/ozone. In Fig. 6, 39a represents a gas piping connected to the reaction gas inlet port 27 of the gas shower 26 shown in Fig. 1(b) for instance for feeding reaction gas to the gas shower 26, 39b represents a gas piping for leading nitrogen gas as carrier gas to the gas piping 39a, 39c represents a gas piping for feeding oxygen gas to an ozonizer 43 and leading ozone gas produced by the ozonizer 43 to the gas piping 39a, 39e represents a gas piping for feeding nitrogen gas to one of pentaethoxytantalum and tantalum pentaethoxyside (Ta(OC 2 H 5 ) 5 ) solutions, 39d represents a gas piping for leading nitrogen gas containing Ta(OC 2 H 5 ) 5 gas to the gas piping 39a, 39g represents a gas piping for feeding nitrogen gas to the TEOS solution, and 39f represents a gas piping for leading nitrogen gas containing the TEOS solution to the gas piping 39a. Furthermore, 40a represents a valve provided in the gas piping 39b for controlling conduction/suspension of the gas, 40b and 40c represent valves provided before and behind the ozonizer 43 for controlling conduction/suspension, 40d to 40g represent valves provided in gas pipings 39d to 39g, respectively, and 41a to 41d represent mass flow controllers for controlling the flow rates of nitrogen gas and oxygen gas flowing in the pipings 39b, 39c, 39e and 39g, respectively. Further, 42a and 42b represent heaters with thermostats for heating the Ta(OC 2 H 5 ) 5 solution and the TEOS solution at a constant temperature. As described above, it is possible to form a triple layer insulating film of Ta 2 O 5 film or SiO 2 film/Ta 2 O 5 film/SiO 2 film and the like by connecting the reaction gas supply source to the gas shower. 2 ○ The second embodiment Fig. 2 is a block diagram for explaining a second embodiment of an apparatus for manufacturing a semiconductor of the present invention. What differs from the structure shown in Fig. 1 is that a series of processing can be performed successively and repeatedly by that a plurality sets of processing systems (22a, 23a) and (22b, 23b) each having a CVD reaction chamber (a vapor deposition chamber) and a UV processing chamber (an ultraviolet rays processing chamber) as one set are connected with one another. In Fig. 2, 21 represents a load/unload chamber connected to the CVD reaction chamber 22a, and a switching means is provided between the CVD reaction chamber 22a and the load/unload chamber 21 connected thereto when occasion demands. Further, (22a, 23a) and (22b, 23b) represent processing systems including the CVD reaction chamber and the UV processing chamber as one set, and a series of processing can be performed successively and repeatedly by connecting a plurality sets of processing systems (22a, 23a) and (22b, 23b). Besides, a switching means is also provided between the CVD reaction chambers 22a and 22b and the UV processing chambers 23a and 23b at need. Furthermore, gas shower such as described with reference to Fig. 1 is provided in respective CVD reaction chambers 22a and 22b, where reaction gas is supplied from a reaction gas supply source shown in Fig. 5 or Fig. 6. Further, a mercury lamp such as described with reference to Fig. 1 is provided in respective UV processing chambers 23a and 23b. Moreover, it is possible to provide a processing gas inlet port in respective UV processing chambers 23a and 23b in a similar manner as the first embodiment. As described above, according to the second embodiment of an apparatus for manufacturing a semiconductor of the present invention, it is possible to perform a series of processing successively and repeatedly since a plurality sets of processing systems (22a, 23a) and (22b, 23b) including the CVD reaction chamber and the UV processing chamber as one set are connected to one another. Furthermore, since it is possible to perform processing by irradiation with ultraviolet rays in processing gas atmosphere which contributes to improvement of the film quality in a similar manner to the first embodiment by providing a processing gas inlet port in respective UV processing chambers 23a and 23b, it becomes possible to form a film of still better film quality. Further, similarly to the first embodiment, it is possible to form a CVD film under one of atmospheric pressure and reduced pressure by providing switching means among respective chambers 21, 22a, 23a, 22b and 23b so as to control the pressure in respective chambers 22a and 22b. 3 ○ The third embodiment Fig. 3 is a schematic diagram for explaining a third embodiment of an apparatus for manufacturing a semiconductor of the present invention. What differs from the structure shown in Fig. 2 is that a plurality sets of processing systems including a CVD reaction zone (corresponding to the CVD reaction chamber) and a UV processing zone (corresponding to the UV processing chamber) as one set are connected to one another, and it is made possible to perform a series of processing successively and repeatedly while moving the wafer by means of a belt conveyor (continuously moving type transfer means) 33. In Fig. 3, (44a, 45a), (44b, 45b) and (44c, 45c) represent processing systems including the CVD reaction zone and the UV processing as one set, in which respective processing systems are arranged in one line with three systems arranged horizontally. Thus, it is made possible to perform a series of processing of vapor deposition and processing by irradiation with ultraviolet rays successively and repeatedly by having the wafer 1 or 9 pass through respective processing systems (44a, 45a), (44b, 45b) and (44c, 45c) by moving the belt conveyor 33 on which the wafer 1 or 9 is placed at an appropriate speed. Besides, an exhaust port for reaction gas and the like not shown is provided in respective zones so that reaction gas and the like introduced into respective zones do not break into other zones. Further, 26a to 26c represent gas showers provided in CVD reaction zones 44a, 44b and 44c, respectively, and gas pipings 34a and 39a of the reaction gas supply source shown in Fig. 5 or Fig. 6 are connected to reaction gas inlet ports 27a to 27c of respective gas showers 26a to 26c. Thus, the reaction gas is supplied and blown out further onto the wafer 1 or 9. With this, an insulating film and the like is formed on the wafer 1 or 9. Further, 30a to 30c represent mercury lamps provided on the UV processing zones 45a, 45b and 45c, and the insulating film and the like formed on the wafer 1 or 9 are processed by irradiation with ultraviolet rays. At this time, it is made possible to introduce processing gas through processing gas inlet ports 32a to 32c of mercury lamp holders 31a to 31c and blow out the processing gas onto the wafer 1 or 9. As described above, according to the third embodiment of an apparatus for manufacturing a semiconductor of the present invention, since continuously moving type transfer means such as a belt conveyor 33 is provided, it is possible to form an insulating film and the like of excellent film quality on the wafer 1 or 9 while moving the wafer 1 or 9. With this, mass productivity is also improved. 4 ○ The fourth embodiment Fig. 4 is a schematic diagram for explaining a fourth embodiment of an apparatus for manufacturing a semiconductor of the present invention. What differs from the first thru the third embodiments is that mercury lamps 51 are provided in a chamber 46 of an atmospheric pressure CVD apparatus, so that film formation and processing by irradiation with ultraviolet rays may be performed in the same chamber 46. A reference numeral 47 in the figure represents a reaction gas inlet port into the chamber 46, and it is possible to change over the connection between the reaction gas inlet port 47 and the piping of reaction gas for forming the CVD film to the connection between the reaction gas inlet port 47 and the piping of the processing gas so as to perform processing by irradiation with ultraviolet rays in processing gas atmosphere when processing by irradiation with ultraviolet rays is performed. Thus, it is possible to perform processing by irradiation with ultraviolet rays in processing gas atmosphere. 48 represents a gas exhaust port for discharging reacted gas, 49 represents a wafer placing table formed in one body with a heater, 50 represents a gas shower for blowing out reaction gas introduced through the reaction gas inlet port 47 onto the wafer 1 or 9, and 52 represents a quartz window for isolating mercury lamps 51 from the reaction gas. It is possible to easily form a CVD insulating film and the like with the film quality improved by the fourth embodiment of the present invention, too. (2) Embodiments of a method for manufacturing a semiconductor device of the present invention Next, embodiments of a method for manufacturing a semiconductor device of the present invention will be described with reference to the above-described apparatus for manufacturing a semiconductor. 5 ○ The fifth embodiment Figs. 7(a) to (d) are sectional views for explaining a method for forming an interlevel insulating film in a fifth embodiment not covered by the present invention. A case in which an apparatus for manufacturing a semiconductor of the first embodiment shown in Figs. 1(a) and (b) where the reaction gas supply source shown in Fig. 5 is connected to the gas shower in the CVD reaction chamber will be described hereinafter. Besides, ozone gas or oxygen gas is used as processing gas in processing by irradiation with ultraviolet rays. First, as shown in Fig. 7(a), Aℓ interconnections 3a to 3c are formed on a SiO 2 film 2 after forming the SiO 2 film 2 on a Si substrate (wafer) 1 by thermal oxidation. Thus, a body to be formed is structured. Then, the wafer 1 is conveyed into the load/unload chamber 21 shown in Fig. 1(a) by means of the robot 24 shown in Fig. 1(b) and moved to under the wafer holder 25. Thereafter, the robot 24 is moved upward, and the wafer 1 is held by the wafer holder 25 by means of an electrostatic chuck so that the film forming face of the wafer 1 faces downward. Next, the wafer holder 25 is moved to the CVD reaction chamber 22. Then, the wafer 1 is heated by a heater incorporated in one body with the wafer holder 25 so as to hold it at a temperature of approximately 400°C, and oxygen gas is conducted to the ozonizer 38 by opening valves 35a and 35b of the reaction gas supply source shown in Fig. 5 at the same time. The oxygen gas is led to the gas piping 34a so that the ozone gas concentration in oxygen gas reaches to approximately 1% while controlling the mass flow controller 36a. Further, the valves 35c and 35d are opened then at the same time, and nitrogen gas containing a TEOS solution at a predetermined flow rate is led to the gas piping 34a while controlling the mass flow controller 36a. As a result, the mixed gas of TEOS/ozone led to the gas piping 34a passes through the inlet port 27 and is blown out onto the wafer 1 by means of the gas shower 26. Such a state is held for a predetermined period of time, and a CVD SiO 2 film 4 having a film thickness of approximately 8,000 Å is formed by covering the Aℓ interconnections 3a to 3c on the wafer 1 (Fig. 7(b)). Since the CVD SiO 2 film 4 is formed at a low temperature at this time, impurities and the like such as -OH and -H usually bonded with H 2 O and Si are contained on the surface and the inside of the CVD SiO 2 film 4. Next, after suspending the supply of reaction gas, the wafer holder 25 shown in Fig. 1(b) is moved to the UV processing chamber 23 shown in Fig. 1(a). Then, mercury lamps 30 are turned on, and ozone gas or oxygen gas is introduced through a processing gas inlet port 32 of a mercury lamp holder 31, thereby to replace the surface of the wafer 1 with ozone gas or oxygen gas. Then, this state is held for a predetermined period of time. At this time, as shown in Fig. 11(a), impurities such as -OH and -H bonded with H 2 O and Si on the surface of the CVD SiO 2 film 4 and inside the CVD SiO 2 film 4 are discharged outside the CVD SiO 2 film 4 by one of the energy of ultraviolet rays and interaction between irradiation with ultraviolet rays and heating. Further, since the wafer surface is replaced with ozone gas or oxygen gas, the dangling bond of Si is buried with oxygen atoms by means of the interaction of oxygen activated by ozone or irradiation with ultraviolet rays and the CVD SiO 2 film 4a is further densified as shown in Fig. 11(b) when ultraviolet rays are emitted. The reformation of the CVD SiO 2 film 4a formed at a low temperature is completed in this manner (Figs. 7(c) and (d)). Thereafter, the mercury lamps 30 are turned off, and the wafer holder 25 is moved to pass through the CVD reaction chamber 22 and sent to the load/unload chamber 21. Further, the wafer 1 is delivered to the robot 24 by an operation reverse to that when the wafer 1 is carried in, and the wafer 1 is taken out of the apparatus by means of the robot 24. As described above, according to the method for forming an interlevel insulating film in the fifth embodiment, it is possible to prevent hillocks and the like of the Aℓ interconnection from being generated since the CVD SiO 2 film 4 is formed at a low temperature. Further, since processing by irradiation with ultraviolet rays is performed, it is possible to have H 2 O and bonds such as Si-OH and Si-H cease to exist in the CVD SiO 2 film 4 containing much H 2 O and bonds such as Si-OH and Si-H, thereby to form a minute CVD SiO 2 film 4 at time of formation because of formation at a low temperature as shown in Fig. 12. With this, it is also possible to prevent immersion of H 2 O from the outside, thus obtaining a film of good quality containing no moisture and the like. Furthermore, since irradiation with ultraviolet rays is performed in the atmosphere of ozone gas or oxygen gas, the dangling bond of Si is buried with oxygen atoms by the operation of oxygen activated by ozone or irradiation with ultraviolet rays as shown in Fig. 11(b). Thus, the CVD SiO 2 film 4a is further densified. Accordingly, it is possible to prevent lowering of the dielectric breakdown strength of the CVD SiO 2 film 4 itself, increase of leakage current between upper Aℓ interconnection formed later on the CVD SiO 2 film 4a and lower Aℓ interconnection, and lowering of reliability due to corrosion of the Aℓ interconnection and the like. Further, since the CVD SiO 2 film 4a can be formed independently, mass productivity can be secured being different from an optical CVD method. Besides, in the fifth embodiment, the CVD SiO 2 film 4a is formed, but one of a PSG film a BSG film, a BPSG film and the like can also be formed by mixing a TMPO solution or a TEP solution with reaction gas, and the present invention is also applicable to these films. Further, TEOS is used as organic silane, but the present invention is applicable by using that which contains alkoxy compound of silicon, siloxane, alkyl-silane and the like. Furthermore, ozone gas or oxygen gas is used as processing gas, but ammonia gas may be used. Further, the wafer temperature is set at 400°C in processing by irradiation with ultraviolet rays, but the processing can be performed within the temperature range of from 200 to 400°C. 6 ○ The sixth embodiment Next, a case when the apparatus for manufacturing a semiconductor in the first embodiment shown in Figs. 1(a) and (b) in which the reaction gas supply source shown in Fig. 5 is connected to the gas shower of the CVD reaction chamber is used, and ammonia gas is used as processing gas in processing by irradiation with ultraviolet rays will be described with reference to Figs. 7(a) to (d). First, as shown in Fig. 7(a), Aℓ interconnections 3a to 3d are formed on a SiO 2 film 2 after forming the SiO 2 film 2 on a Si substrate (wafer) by thermal oxidation in a similar manner to the first embodiment. Thus, a body to be formed is structured. In succession, as shown in Fig. 7(b), a CVD SiO 2 film (insulating film) 4 having a film thickness of approximately 8,000 Å is formed on a body to be formed heated to a temperature of approximately 400°C using the CVD apparatus shown in Figs. 1(a) and (b) in a similar manner to the first embodiment. Next, after suspending supply of reaction gas, the wafer holder 25 shown in Fig. 1(b) is moved to the UV processing chamber 23 shown in Fig. 1(a) while maintaining the wafer temperature at approximately 400°C for the purpose of reforming the CVD SiO 2 film 4. Then, mercury lamps 30 are turned on and ammonia gas is introduced through the processing gas inlet port 32 of the mercury lamp holder 31 at the same time, thereby to replace the surface of the wafer 1 with ammonia gas. This state is held for a predetermined period of time. At this time, as shown in Fig. 11(a), impurities such as -OH and -H bonded with H 2 O or Si on the surface of the CVD SiO 2 film 4 and inside the CVD SiO 2 film 4 are discharged outside the CVD SiO 2 film 4 by the energy of ultraviolet rays or interaction between irradiation with ultraviolet rays and heating, and the CVD SiO 2 film 4a is also further densified by the operation of ammonia gas activated by irradiation with ultraviolet rays. Thus, reforming of the CVD SiO 2 film 4a formed at a low temperature is completed (Figs. 7(c) and (d)). Thereafter, mercury lamps 30 are turned off, and the wafer holder is moved so as to pass through the CVD reaction chamber 22 and sent to the load/unload chamber 24. Furthermore, the wafer 1 is delivered to the robot 24 by the operation reverse to that when the wafer 1 is carried in, and the wafer 1 is taken out of the apparatus by means of the robot 24. In the CVD SiO 2 film 4a formed as described above, the results of performing: 1 ○ investigation on the moisture content in a film by an electrochemical method, and 2 ○ investigation on the composition of a film by infrared absorption spectrum show that the moisture content is reduced about half as compared with a case where no processing is performed as shown in Fig. 13(a), and the peak (swelling) showing H 2 O ceases to exist as shown in Fig. 13(b) by performing processing by irradiation with ultraviolet rays. Now, this CVD SiO 2 film 4a was left as it is in the atmosphere for one week, but no change was noticed in the moisture content in the CVD SiO 2 film 4. This fact shows that those factors that cause generation of moisture have been removed from the inside of the CVD SiO 2 film 4, that immersion of new moisture from the outside of the CVD SiO 2 film 4a is prevented, and that the CVD SiO 2 film 4a is further densified. This is considered because of such reasons that H 2 O and the like are discharged outside the CVD SiO 2 film 4a by ultraviolet rays of high energy or by the operation of activated ammonia gas, or that the other films have been reformed. Incidentally, when the result of a case shown in Fig. 13(b) in which ammonia gas is used is compared with the result of a case shown in Fig. 12 in which oxygen gas is used, it is shown that the peak showing the bond of H 2 O becomes smaller gradually as the ultraviolet rays emitting time gets longer in that which is processed with oxygen gas. However, as compared with that the peak ceases to exist in a short period of time for several minutes in that which is processed with ammonia gas, the peak was slightly noticed even in case the time of irradiation with ultraviolet rays is for several tens minutes. As a result, it is recognized that the processing by irradiation with ultraviolet rays with ammonia has a bigger effect than the processing by irradiation with ultraviolet rays with oxygen. As described above, according to the sixth embodiment of the present invention, it is possible to prevent hillocks and the like on the Aℓ interconnections 3a to 3c from generating since the CVD SiO 2 film 4a is formed at a low temperature. Moreover, since processing by irradiation with ultraviolet rays is performed, H 2 O and bonds such as Si-OH and Si-H are removed from the CVD SiO 2 film 4 containing much of them at time of formation because of formation at a low temperature, and the CVD SiO 2 film 4a is densified. Since it is possible to prevent lowering of dielectric breakdown strength of the CVD SiO 2 film 4a itself and to prevent moisture and the like from immersing from the outside of the CVD SiO 2 film 4a, it is possible to prevent increase of leakage current between the upper Aℓ interconnection formed later on the CVD SiO 2 film 4a and lower Aℓ interconnections 3a to 3c and lowering of reliability by corrosion of Aℓ interconnections 3a to 3c and the like. Besides, the wafer temperature is set at 400°C in processing by irradiation with ultraviolet rays in the sixth embodiment, but the processing is also possible within the temperature range from 200 to 400°C. 7 ○ The seventh embodiment Figs. 8(a) to (d) are sectional views for explaining a method for forming an interlevel insulating film in the seventh embodiment not covered by the present invention. A case that an apparatus for manufacturing a semiconductor in the second embodiment shown in Fig. 2 in which the reaction gas supply source shown in Fig. 5 is connected to the gas shower of the CVD reaction chamber will be described hereunder. What differs from the fifth embodiment is that a predetermined film thickness of 8,000 Å is not formed at a time, but the predetermined film thickness of 8,000 Å is formed finally by applying the manufacturing method of the present invention to every 2,000 Å. First, as shown in Fig. 8(a), Aℓ interconnections 3a to 3c are formed after forming a SiO 2 film 2 on a Si substrate (1) by thermal oxidation. Thus, a body to be formed is structured. Then, the wafer is introduced into the load/unload chamber 2 of the apparatus for manufacturing a semiconductor shown in Fig. 2 by means of the robot 24 such as shown in Fig. 1(b). Then, after the wafer holder 25 is moved with the wafer 1 held thereon and carried into the CVD reaction chamber 22a of a set of processing system, a first CVD SiO 2 film 5 having a film thickness of approximately 2,000 Å is formed covering the Aℓ interconnections 3a to 3c in a similar manner to the fifth embodiment by mixed gas of TEOS/ozone. In succession, the wafer holder 25 is moved so as to carry the wafer into the UV processing chamber 23a, and processing by irradiation with ultraviolet rays is performed. Since the formed first CVD SiO 2 film 5 has a sufficiently thin film thickness at this time, the film quality is improved extending over the total film thickness by processing by irradiation with ultraviolet rays (Fig. 8(a)). Next, after the wafer holder 25 is moved so as to carry the wafer 1 into the CVD reaction system 22b of the other one set of processing system, a second CVD SiO 2 film 6 having a film thickness of approximately 2,000 Å is formed on the first CVD SiO 2 film 5 in a similar manner to the fifth embodiment. In succession, the wafer holder 25 is moved so as to carry the wafer 1 into the UV processing chamber 23b, and processing by irradiation with ultraviolet rays is performed. Since the second CVD SiO 2 film 6 also have a sufficiently thin film thickness at this time, the film quality is reformed extending over the entire film thickness in a similar manner to the first CVD SiO 2 film 5. Then, the wafer holder 25 is moved, and a third CVD SiO 2 film 7 having a film thickness of approximately 2,000 Å irradiated with ultraviolet rays in a similar manner to the fifth embodiment is formed on the second CVD SiO 2 film 6 by means of one set of processing system (22b and 23b) which has formed a film shown in Fig. 8(a) on the wafer 1. In succession, the wafer holder 25 is moved, and a fourth CVD SiO 2 film 8 having a film thickness of approximately 2,000 Å processed by ultraviolet rays is formed similarly to the above by means of the other one set of processing system (22b and 23b) (Fig. 8(d)). Since both the third CVD SiO 2 film 7 and the fourth CVD SiO 2 film 8 have a sufficiently thin film thickness at this time, the film quality is reformed extending over the entire film thickness, respectively. As described above, according to the seventh embodiment, a predetermined film thickness of 8,000 Å is formed finally by applying the manufacturing method of the present invention to every sufficiently thin film thickness of 2,000 Å. Thus, it is possible to further improve the film quality of the CVD SiO 2 films 5 to 8 as a whole as compared with the fifth embodiment. Besides, the processing is performed by using the apparatus for manufacturing a semiconductor shown in Fig. 2 in the seventh embodiment, but it is also possible to form the CVD SiO 2 film in four layers using the apparatus for manufacturing a semiconductor shown in Figs. 1(a) and (b). In this case, the wafer is to make round trips four times between the CVD reaction chamber 22 and the UV processing chamber 23. Furthermore, it is possible to further improve mass productivity by using the apparatus for manufacturing a semiconductor shown in Fig. 3. 8 ○ The eighth embodiment Figs. 9(a) to (d) are sectional views for explaining a method for forming a capacitor insulating film composed of a Ta 2 O 5 film in an eighth embodiment not covered by the present invention. A case that the apparatus for manufacturing a semiconductor in the first embodiment shown in Figs. 1(a) and (b) in which the reaction gas supply source shown in Fig. 6 is connected to the gas shower of the CVD reaction chamber is used will be described hereunder. Fig. 9(a) is a sectional view of a DRAM before a capacitor insulating film is formed. A reference numeral 9 in the figure represents a Si substrate (wafer), 10a and 10b represent gate insulating films formed on the Si substrate 9, 11a and 11b represent gate electrode (word lines) formed on the gate insulating films 10a and 10b, and 12a/12b and 12b/12c represent S/D regions provided on both sides of the gate electrodes 11a and 11b where the S/D region 12b is formed in common. Further, 13a and 13b represent insulating films for covering the gate electrodes 11a and 11b, 14 represents a bit line connected to the common S/D region 12b, 15 represents an insulating film for covering the bit line 14, and 16a and 16b represent storage nodes composed of polysilicon films. Thus, a body to be formed is structured. Such a body to be formed is introduced into the load/unload chamber 21 of the apparatus for manufacturing a semiconductor shown in Fig. 1(a) by means of the robot 24 such as shown in Fig. 1(b). Then, the wafer holder 25 is moved with the wafer 9 held thereon and carried into the CVD reaction chamber 22. Thereafter, the wafer 9 is heated to a temperature at approximately 350°C. Next, when valves 40b and 40c of the reaction gas supply source shown in Fig. 6 are opened so that oxygen gas is made to pass through an ozonizer 43, and converted into ozone gas and fed into the gas piping 39a, valves 40e and 40d are opened at the same time so that nitrogen gas is bubbled in the Ta(OC 2 H 5 ) 5 solution heated to a temperature of approximately 65°C, and nitrogen gas containing Ta(OC 2 H 5 ) 5 is made to pass through the gas piping 39a and the gas shower 26 so as to be led onto the wafer 9, the mixed gases react each other on the surface of the SiO 2 film 16, and an amorphous Ta 2 O 5 film 17 is started to be formed at a growth rate of approximately 1,200 Å/min. Then, when this state is held for several tens seconds, the amorphous Ta 2 O 5 film (capacitor insulating film) 17 having a film thickness of approximately 600 Å is formed on storage nodes 16a and 16b and the SiO 2 film 15 (Fig. 9(b)). Then, after the supply of the reaction gas is stopped by closing the valves 40b to 40e, the wafer holder 25 shown in Fig. 1(b) is moved to the UV processing chamber 23 shown in Fig. 1(a). Then, the temperature of the wafer 9 is raised to approximately 400°C, and the mercury lamps 30 are turned on at the same time. Furthermore, ozone gas is introduced through the gas inlet port 32 of the mercury lamp holder 31 and the surface of the wafer 9 is replaced with the ozone gas. This state is held for a predetermined period of time. At this time, impurities such as -OH and -H bonded with H 2 O and Ta on the surface of the Ta 2 O 5 film 17 and inside the Ta 2 O 5 film are discharged outside of the Ta 2 O 5 film 17 by the energy of ultraviolet rays or by interaction between irradiation with ultraviolet rays and heating. Further, since the surface of the wafer 9 has been replaced with ozone gas or oxygen gas, the dangling bonds of Ta on the surface are buried with oxygen atoms by the operation of one of ozone and oxygen activated by irradiation with ultraviolet rays, and the Ta 2 O 5 film 17 is further densified. Thus, reformation of the Ta 2 O 5 film 17 formed at a low temperature is completed (Fig. 9(c)). Next, the mercury lamps 30 are turned off, and the wafer holder 25 is moved so as to pass through the CVD reaction chamber 22 and is sent to the load/unload chamber 21. Furthermore, the wafer 9 is delivered to the robot 24 by the operation reverse to that when the wafer 9 is carried in, and the wafer 9 is taken out of the apparatus by means of the robot 24. When a cell plate 18 composed of a polysilicon film and a cover insulating film 19 are formed successively on the Ta 2 O 5 film 17 thereafter through normal processes, a DRAM is completed (Fig. 9(d)). As described above, according to the method for forming an interlevel insulating film in the eighth embodiment, the Ta 2 O 5 film 17 is formed at a low temperature. Thus, it is possible to reduce the stress of the Ta 2 O 5 film 17 applied to surrounding insulating films. Moreover, since processing by irradiation with ultraviolet rays is performed, H 2 O and -OH and -H bonded with Ta are removed from the Ta 2 O 5 film 17 containing much H 2 O and bonds such as Ta-OH and Ta-H at time of formation due to formation at a low temperature, thus making it possible to form a minute film. Furthermore, since ultraviolet rays are emitted in ozone gas or oxygen gas atmosphere, the dangling bonds of Ta are buried with oxygen atoms by the operation of ozone or oxygen activated by irradiation with ultraviolet rays as shown in Fig. 11(b), and the Ta 2 O 5 film 17 is further densified. Accordingly, it is possible to prevent lowering of dielectric breakdown strength of the Ta 2 O 5 film 17 itself and lowering of reliability such as increase of leakage current. Besides, the Ta 2 O 5 film 17 is formed under the atmospheric pressure in the eighth embodiment, which, however, is also possible under reduced pressure. Further, ozone gas or oxygen gas is used as processing gas, but ammonia gas may also be used according to the present invention. 9 ○ The ninth embodiment Fig. 10 is a sectional view for explaining a method of forming a capacitor insulating film consisting of a triple layer insulating film of a lower CVD SiO 2 film/a Ta 2 O 5 film/an upper CVD SiO 2 film in a ninth embodiment not covered by the present invention. A case that an apparatus for manufacturing a semiconductor in the second embodiment shown in Fig. 2 and Fig. 6 is using will be explained hereunder. First, the wafer 9 before forming a capacitor insulating film described with reference to Fig. 9(a) is introduced into the load/unload chamber 21 of the apparatus for manufacturing a semiconductor shown in Fig. 2 by means of the robot 24 such as shown in Fig. 1(b). Then, after moving the wafer holder 25 with the wafer 9 held thereon and carrying it into the CVD reaction chamber 22a of one set of processing system, the wafer 9 is heated to a temperature of approximately 400°C by means of a heater provided inside the wafer holder 25. Next, nitrogen gas is fed into the TEOS solution heated by a heater 42b to a temperature of 65°C by opening the valve 40g and bubbled there. Then, nitrogen gas containing TEOS as reaction gas is fed to the gas piping 39a and ozone gas generated by the ozonizer 43 is also fed to the gas piping 39a so as to mix them with each other. This mixed gas is made to pass through the gas piping 39a and the gas shower 26 and blown out onto the wafer 9. With this, well-known TEOS-ozone reaction is generated on the wafer 9, and a lower CVD SiO 2 film 20a is formed on the wafer 9 (Fig. 10). Next, the valves 40f and 40g shown in Fig. 6 are closed, and the wafer 9 is sent to the UV processing chamber 23a. Then, ozone gas is introduced so as to replace the surface of the wafer with ozone gas, and ultraviolet rays are emitted for a predetermined period of time while maintaining the wafer temperature at 400°C. Next, after suspending the supply of ozone gas, the wafer 9 is sent to the CVD processing chamber 22b. In succession, the temparature of the wafer 9 is lowered to be set to approximately 350°C, and the valves 40d and 40e are opened at the same time so as to mix nitrogen gas containing Ta(OC 2 H 5 ) 5 with ozone gas in a similar manner to the seventh embodiment. When this mixed gas is made to pass through the gas piping 39a and the gas shower 26 and introduced onto the wafer 9, the mixed gases react with each other on the surface of the SiO 2 film 20a, and an amorphous Ta 2 O 5 film 20b is started to be formed at a growth rate of approximately 1,200 Å/min. Then, when this state is held for several tens seconds, the amorphous Ta 2 O 5 film 20b having a film thickness of approximately 600 Å is formed on the lower CVD SiO 2 film 20a (Fig. 10). Then, the valves 40d and 40e are closed, and the wafer 9 is sent to the UV processing chamber 23. Then, ozone gas is introduced so as to replace the surface of the wafer 9 with ozone gas, and ultraviolet rays are emitted for a predetermined period of time while maintaining the wafer temperature at 400°C. Next, after the supply of ozone gas is suspended, the wafer 9 is sent to the CVD processing chamber 22a again. Then, the valves 40f and 40g are opened, and the wafer 9 is heated to a temperature of approximately 400°C. In succession, when mixed gas of organic silane/ozone is made to pass through the gas piping 39a and the gas shower 26 so as to be led onto the wafer 9, thereby to generate reaction on the Ta 2 O 5 film 25 so as to form an upper CVD SiO 2 film 20c on the Ta 2 O 5 film 20b, a triple layer insulating film (capacitor insulating film) 20 composed of lower CVD SiO 2 film 20a/Ta 2 O 5 film 20b/upper CVD SiO 2 film 20c is formed (Fig. 10). As described above, according to the manufacturing method in the ninth embodiment, notwithstanding that lower CVD SiO 2 film 20a/Ta 2 O 5 film 20b/upper CVD SiO 2 film 20c are formed at a low temperature, respectively, irradiation with ultraviolet rays is applied to all of them. Hence, H 2 O and the like are moved, and the triple layer insulating film 20 of still better film quality can be formed. In particular, ultraviolet rays are emitted in ozone gas or oxygen gas atmosphere. Therefore, the dangling bonds of Ta and Si are buried with oxygen atoms by the operation of ozone or oxygen activated by irradiation with ultraviolet rays, and the lower CVD SiO 2 film 20a/the Ta 2 O 5 film 20b/the upper CVD SiO 2 film 20c are further densified. Further, it is possible to easily form a triple layer insulating film 20 of still better film quality by switching the reaction gas. Besides, the lower CVD SiO 2 film 20a/the Ta 2 O 5 film 20b/the upper CVD SiO 2 film 20c are formed under the atmospheric pressure in the ninth embodiment, which, however, is also possible under reduced pressure. Further, the triple layer insulating film 20 is formed, but a double layer insulating film composed of a SiO 2 film and a Ta 2 O 5 film and other multilayer insulating films can be formed. Furthermore, the apparatus for manufacturing a semiconductor shown in Fig. 2 is used, but the insulating film can also be formed by using the apparatus for manufacturing a semiconductor shown in Figs. 1(a) and (b) and Fig. 3. Further, ozone gas or oxygen gas is used as processing gas, but ammonia gas may also be used as in the present invention.

Claims: A method for manufacturing a semiconductor device comprising the steps of: depositing an insulating film (4) on a substrate (1) by chemical vapor deposition (CVD); and contacting said insulating film (4) with ammonia, and simultaneously irradiating said insulating film (4) with ultraviolet rays while heating said insulating film (4). A method for manufacturing a semiconductor device according to claim 1, wherein said depositing step, and said contacting and irradiating step are repeated more than once. A method for manufacturing a semiconductor device according to claim 1 or 2, wherein said chemical vapor deposition is performed under atmospheric pressure. A method for manufacturing a seminconductor device according to claim 1 or 2, wherein said chemical vapor deposition is performed under reduced pressure. A method for manufacturing a semiconductor device according to one of the preceding claims, wherein said insulating film is selected from the group consisting of a SiO 2 film, a PSG film, a BSG film and a BPSG film, and said chemical vapor deposition is performed using as the reaction gas a mixed gas containing oxygen (O 2 ) and monosilane (SiH 4 ), and using a deposition temperature in the range of 350°C to 450°C. A method for manufacturing a semiconductor device according to one of claims 1 to 4, wherein said insulating film is selected from the group consisting of an SiO 2 film, a PSG film, a BSG film and a BPSG film, and said chemical vapor deposition is performed using as the reaction gas a mixed gas containing ozone (O 3 ) and an organic silane, such as an alkoxy compound of silicon, a siloxane, or an alkyl silane and using a deposition temperature in the range of 350°C to 450°C. A method for manufacturing a semiconductor device according to one of claims 1 to 4, wherein said insulating film is a Ta 2 O 5 film, and said chemical vapor deposition is performed using as the reaction gas a mixed gas containing ozone (O 3 ) and an organic compound of tantalum (Ta), and using a deposition temperature in the range of 300°C to 450°C. An apparatus for manufacturing a semiconductor device according to the method of any one of claims 1 to 7 comprising: a vapor deposition chamber (22) for depositing an insulating film (4) on a substrate (1) by chemical vapor deposition (CVD); an ultraviolet rays processing chamber (23) being connected to said vapor deposition chamber (22) for irradiating said insulating film (4) with ultraviolet rays, said chamber having a processing gas inlet port (32) for allowing introduction of a gas during UV irradiating of the substrate; and a substrate holder (25) having a heater which heats said substrate (1) on said substrate holder (25), said holder being capable of moving between said vapor deposition chamber (22) and said ultraviolet rays processing chamber (23). An apparatus according to claim 8 for manufacturing a semiconductor device according to the method of any one of claims 1 to 7, wherein said vapor deposition chamber (22a, 22b) and said ultraviolet rays processing chamber (23a, 23b) form a set and a plurality of sets are connected in succession.

Inventors: MAEDA KAZUO, NISHIMOTO YUKO, TOKUMASU NOBORU, MAEDA, KAZUO, NISHIMOTO, YUKO, TOKUMASU, NOBORU, MAEDA, KAZUO, C/O SEMICONDUCTOR PROCESS, NISHIMOTO, YUKO, C/O SEMICONDUCTOR PROCESS, TOKUMASU, NOBORU, C/O SEMICONDUCTOR PROCESS
Applicants: ALCAN TECH CO INC, CANON SALES CO INC, SEMICONDUCTOR PROCESS LAB CO, ALCAN- TECH CO., INC., CANON SALES CO., INC., SEMICONDUCTOR PROCESS LABORATORY CO., LTD.
Application year: 1992
Main classification: H01L21
IPC codes: H01L21, C23C16