Method of manufacturing a semiconductor memory device containing a capacitor

Abstract: A semiconductor device comprises a capacitor consisting of an Al region formed on a semiconductor substrate, an Al oxide film formed on a surface of said Al region, and electrodes opposed to said Al region with interposition of said Al oxide film. The Al region can be grown selectively to produce freestanding mushroom-like structures without further pattering steps.

Description: The present invention relates to a method for manufacturing a semiconductor integrated circuit device such as a memory, a photoelectric device or a signal processing device mounted on various electronic equipments, and more particularly to a method for manufacturing a semiconductor device incorporating an electrostatic capacitive element. There are many semiconductor integrated circuits that incorporate electrostatic capacitive elements. Recently, along with the emergence of higher density and higher speed integrated circuits, capacitive elements of smaller size and with larger capacity are sought. Fig. 1 is a typical cross-sectional view of a capacitive element of metal-insulation film-metal structure. This capacitive element comprises a surface metal (lower electrode) 202 formed on a semiconductor substrate 201, an interlayer insulation film 203, an upper layer metal (upper electrode) 204, and a thin insulation film (dielectric layer) 205 which is a capacitive portion. As metal films of the upper and lower layers, Al or Al alloy formed by the magnetron sputtering method, tungsten, or tungsten formed by the chemical vapour deposition (CVD) method are used. As the thin insulation film 205 serving as a capacitor, SiO 2 , Si 3 N 4 , or Ta 2 O 5 formed by CVD, Al 2 O 3 formed by anodizing, or a laminate made of a combination of those films can be used. In this capacitive element, there is an advantage that parasitic capacitance or parasitic resistance may not be produced. However, in a conventional technology, the surface of electrode is coarse, so that it is difficult to increase the electrostatic capacity per unit area of capacitive element. That is, on an electrode surface formed by the conventional technology, hillocks 202A might be produced as shown on larger scale in Fig. 1, so that it is a problem that if the thickness of dielectric layer 205 is made thinner to increase the electrostatic capacitance per unit area of capacitive element, the dielectric layer 205 may be broken at a position where hillock 202A is produced, or become extremely thin and thus has a lower electrical withstand voltage. In other words, a metal film formed by a conventional method such as sputtering method or ordinary CVD method is quite irregular on the surface of metal film, because the stress built up in the film might be dispersed in the form of hillocks with the heat processing after deposition, whereby it is difficult to form a thin insulation layer. In a highly integrated circuit system, it is required to form a high dielectric constant thin insulation layer uniformly. Particularly, with a capacitive element of Al-insulation layer-Al structure, if Al 2 O 3 with a dielectric constant of 8 to 10 is used as the insulation layer by anodising Al, the degree of integration can be greatly improved. However, as above described, with the conventional technology, there are too many irregularities on the surface of Al, so that it is difficult to form Al 2 O 3 uniformly at practical yield. On the other hand, as an electrostatic capacitive element used for a dynamic RAM, a circuit as shown in Fig. 2 is known in which a capacitor is connected to the drain side of a MOSFET. Fig. 3 is one of the device structures for implementing that circuit, referred to as a stack type. This structure includes a nMOSFET having a polysilicon gate 23 on a gate oxide film 22 formed on a p-type substrate 21, a source 24, a drain 25, a source electrode 26, a field oxide film 27, an oxide film 28 and an interlayer insulation film 29, and a capacitor composed of a polysilicon 30 provided in contact with the drain of nMOSFET, and a further polysilicon 32 provided via a dielectric film 31. A trench type as shown in Fig. 4 and a fin type as shown in Fig. 5 are obtained by deforming the shapes of respective polysilicon layers 30A, 32A and 30B, 32B as shown, in order to increase the capacitance of stack-type capacitor and decrease its size. Apart from a desired improvement of electrostatic capacitive element itself as previously described, the increase of capacitance and the reduction of element area for capacitor became a large technical problem. However, in the stack-type as above described, the increase of capacitance and the reduction of element area for capacitor are not consistent. In the trench type, there is a problem of capacitor leakage. In the fin type, there is a problem that the manufacturing process is complex because the shape of the polysilicon is complex, so that it is difficult to provide a memory cell with an increased degree of integration at a low price. That is, with the conventional technique, as the constitution or manufacturing method for capacitor was not sufficient, it was difficult to form a capacitor with small occupying area and large capacitance at a good yield. In a semiconductor circuit, a storage element (hereafter referred to as a memory cell) having a circuit configuration as shown in Fig. 6 is known. A typical cross-sectional view of such a memory cell is shown in Fig. 7. As shown in Fig. 7, a capacitor C as capacitive element incorporated into the memory cell is constituted of a lower electrode 30, an upper electrode 32, and a dielectric film 31 formed between both electrodes 30, 32. When the higher integration is required for such memory cell, it is necessary to reduce the plane area of capacitor C as capacitive portion in each bit. In order to operate the memory cell normally, it is necessary to build up the quantity of electric charge as much as about 200fC in the capacitor C to secure a resistance against soft error due to the a ray emitted from a ceramic package of DRAM, for instance. If setting the power voltage at 5V with this quantity of charge, and representing the capacitance between source and earth for the capacitor C as Cs, then Cs ≧ 40fF When the dielectric film 31 is a general Si oxide film, it is known that the electric field applicable to the dielectric film 31 is E < about 5MV/cm because of the reliability for the Si oxide film. Thus, when a method for applying a voltage half the power voltage is used, the thickness of Si oxide film that can be sufficiently used as the dielectric film is presumed to be 5nm (50Å) (1Å = 0.1 nm). Since the dielectric constant ε r of Si oxide film is 3.7, it is necessary to secure the plane area of capacitor C as large as 6 µm 2 or more, in order to realise Cs ≧ 40fF. A memory cell comprising a capacitor having such a large plane area cannot meet the recent requirements of higher degree of integration as above described. Thereby, with the capacitor C of laminated structure in the shape of downward or upward convex as shown in Fig. 7, for example, the necessary capacitance was secured by increasing the surface area without enlarging the projection plane area of capacitor C. A conventional memory capacitor having aluminium electrodes in known for example from JP-A-58 215 067. Selective deposition of aluminium from a vapour including alkylaluminium and hydrogen is described in Appl. Phys. Lett. 56(16), 16.4.90, pp. 1543-5. The present invention is intended as a solution to the problems aforesaid. In particular, it is intended as a method of manufacturing a semiconductor device having a compact and high capacitance capacitor element. Accordingly, there is provided a method for producing a semiconductor integrated circuit device including a transistor having source and drain regions, a gate insulation film and a gate electrode, also including a capacitor disposed above and in contact with one of said source and drain regions, which method comprises the steps of: forming a rectangular opening of width W and length L, W≦L, in said gate insulation film to expose said one of said source and drain regions; depositing aluminium or aluminium based metal to produce a capacitor lower layer electrode in said opening; forming an insulation film over the exposed surface of said capacitor lower layer electrode; and forming a capacitor upper electrode on said insulation film; which method is characterised in that: said step of depositing aluminium or aluminium-based metal is performed by selective chemical deposition from a vapour including an alkylaluminium hydride and hydrogen, to produce said lower layer electrode with a rectangular parallelopiped shape and a height H, H>W; and said step of forming insulation film over the exposed surface of said capacitor lower layer electrode is performed by oxidisation of said exposed surface. In the present invention, since Al or Al-based metal selectively deposited on a semiconductor substrate is used as a lower electrode layer, an electrostatic capacitive element of Al-insulation film-Al structure having high withstand voltage and with high reliability can be formed at good yield. Also, if Al is used for both electrodes of the electrostatic capacitive element, the influences of diffusion resistance and junction capacitance can be eliminated, so that the influence of parasitic elements can be reduced as compared with conventional MOS capacitor and pn junction capacitor, whereby the frequency characteristics of capacitor can be improved. Furthermore, the surface of the Al electrode produced according to the present invention is quite flat, so that it is possible to make an insulation layer thinner than is conventional, and thus increase the electrostatic capacitance per unit area. In the present invention, since the lower electrode is formed with a higher aspect ratio (vertically extended) structure so that it is possible to implement a semiconductor device having a small-sized capacitor with large capacity and excellent durability using a simple process. Also, since an electrode material having excellent selectivity and of good quality can be deposited in forming electrodes constituting a capacitor, a capacitor having small occupying area can be formed at good yield. In the accompanying drawings: Fig. 1 is a typical cross-sectional view of a conventional capacitor; Fig. 2 is a circuit diagram of a conventional memory cell; Figs. 3 to 5 are typical cross-sectional views of conventional semiconductor memory cells, respectively; Fig. 6 is an equivalent circuit diagram of a conventional memory cell; Fig. 7 is a typical cross-sectional view of another conventional semiconductor memory cell; Figs. 8A and 8B are typical views for explaining a semiconductor memory according to a first example of the present invention; Fig. 9 is a typical cross-sectional view of a semiconductor memory according to a second example of the present invention; Figs. 10A to 10H are typical views for explaining a process of manufacturing the semiconductor memory according to the second example of the present invention; Fig. 11 is a typical circuit diagram of a semiconductor circuit device according to a third example of the present invention; Fig. 12 is a typical cross-sectional view of the semiconductor circuit device according to the third example of the present invention; Fig. 13 is a typical cross-sectional view of a semiconductor circuit device of alternative structure to the device of Fig. 12; Fig. 14 is a circuit diagram showing a DRAM according to a fourth example of the present invention; Fig. 15 is a circuit diagram showing an optical sensor according to a fifth example of the present invention; Fig. 16 is a circuit diagram showing an operational amplifier according to a sixth example of the present invention; Fig. 17 is a circuit diagram showing a comparator circuit according to a seventh example of the present invention; Figs. 18 and 19 are typical views showing one example of a film forming apparatus used in carrying out a film forming method suitable for formation of an interconnection layer in a semiconductor device embodying the present invention; Fig. 20 is a schematic plan constitutional view of the apparatus as shown in Figs. 18 and 19; Fig. 21 is a schematic constitutional view in which the sequence order of the apparatus shown in Fig. 20 is indicated by arrow; and Figs. 22A to 22D are typical views for explaining a film forming method suitable for formation of an interconnection layer in a semiconductor device according to the present invention. In order that this invention may be well understood, a number of examples will be described below. The following description is intended to be by way of example only. Example 1 Fig. 8A is a typical cross-sectional view of a portion of semiconductor device according to a first example 1 of the present invention. On the principal plane of a semiconductor substrate 601 is formed a gate insulation film 602, on the periphery of which is formed a thick field insulation film 603 so as to delineate a region of semiconductor element. Within the region of semiconductor element, there are formed drain and source region 605, between which a gate electrode 604 is provided on the gate insulation film 602. A capacitor is constituted such that a lower layer electrode 607 is provided on a surface of the semiconductor region exposed through an opening formed in the insulation films on the surface of the semiconductor region, such as insulation film 606 of gate electrode and field insulation film 603, and an upper electrode is provided on a dielectric film 608 thereon. Hereby, the most characteristic feature of constitution is that the lower layer electrode 607 is made in a large aspect ratio (i.e. vertically extended) structure as shown in Fig. 8B. With such structure, the capacitance can be increased while the area occupied by the capacitor on the surface of the semiconductor substrate is left small. A rectangular parallelopiped shape is favourable because it is easily designed. With the rectangular parallelopiped shape, assuming the length of the short side of the junction surface with the underlying semiconductor region to be W, the height H is designed so as to satisfy the relation H > W. Here, a ratio of H to W and a long side L (≧W) of junction surface are appropriately selected in accordance with the capacitance of capacitor to be designed, and the area occupied by the capacitor can be reduced since the magnitude relation between H and W satisfies the above expression. With conventional techniques, it is difficult to bury contact holes having large aspect ratio with electrical conductive material completely, for example. Therefore, because contact portions could not be made with large aspect ratio, it never could be conceived that one electrode of the capacitor could be constructed to satisfy the above relation. The present invention follows the discovery that good quality metal can be deposited with excellent selectivity by using a new CVD method as will be described later. As a result of more detailed study and examination, it is found that growth can be extended in a longitudinal (i.e. vertical) direction. Although the structure of capacitor electrode is said to be rectangular parallelopiped, this is not intended to exclude one having tapered edge portions as shown in Fig. 8A. As this electrode, Al or an Al-based metal such as Al-Si, Al-Ti, Al-Cu, Al-Si-Ti or Al-Si-Cu can be used. Particularly, monocrystal Al is most preferable. Also, the underlying semiconductor region can be either n-type or p-type. Optionally, film made of barrier metal such as TiN can be interposed between the substrate and deposited metal. With the new CVD method as will be described later, however, barrier metal is not necessary because the quality of deposited film is quite excellent. The dielectric film of the capacitor can be fabricated thin with large capacity because the surface smoothness of the electrode is also excellent. The dielectric film is made thin and fine by the oxidisation of the electrode, so that the capacitance of the capacitor is increased even further. The CVD method used in the present invention will be described. In the following explanation, an instance will be cited in which the contact between semiconductor element and upper interconnection is excellent and a flat upper interconnection is formed. Its aim is to show how well in selectivity good quality of film can be made in the longitudinal shape, wherein the burying within contact hole having large aspect ratio is mainly achieved to form the above-described electrode, because the film deposited on the insulation film having a contact hole is excellent in selectivity. With the method described below, it will be understood that the multilayer interconnection can be made via the insulation film having the constitution shown in Fig. 8A. Example 2 Fig. 9 is a typical cross-sectional view of a memory cell according to a second example of the present invention. The circuit structure of the memory cell shown in Fig. 9 corresponds to the circuit shown in Fig. 2. At the surface of a p-type substrate 611 are formed a gate oxide film 612 and a field oxide film 613, a polysilicon gate 614, an n-type drain region 615, and a source region 616 are provided, the polysilicon gate 614 being covered with an oxide film 617. In oxide film 612, on the upper side of the drain region 615, is opened a contact hole, in which Al monocrystal 618 is deposited on the drain, by the selective deposition method as above described, to thereby constitute a capacitor together with an oxide film (Al 2 O 3 ) 619 and a polysilicon covering 620. Above the source region 616, the interlayer insulation film 620 is opened, and an Al electrode 622 is provided. It is preferable that the Al electrode 622 is also formed by the selective deposition method. Using the Al-CVD method, it is possible to provide a flat interconnection without surface irregularities. It is also possible to open a through hole in the polysilicon gate 614, fill its inside with Al, by the selective deposition method, and form an Al interconnection in the interlayer insulation film, by non-selective deposition, to connect with the polysilicon gate 614. A manufacturing method embodying the present invention will be described now with reference to Figs. 10A to 10H. First, as shown in Fig. 10A, a gate oxide film 612 and a field oxide film 613 are formed on a p-type substrate 611. Next, polysilicon is deposited by the CVD method, and a patterned polysilicon gate 614 is formed (Fig. 10B). An nMOS structure is constructed in such a manner that with the ion injection method, an n-type drain 615 and a source 616 are formed, and an oxide film 617 is formed on the surface of polysilicon gate 615 (Fig. 10C). These processes are conventional. A contact hole, above the drain 615, is formed by removing a portion of the oxide film 612 (Fig.10D). Afterwards, by the CVD method using Al(CH 3 ) 2 H and H 2 , Al 618 having a thickness of 1 µm is selectively deposited on the drain 615 (Fig. 10E). This deposition is performed in self-coordinated manner, in which monocrystal Al is deposited, with its upper and lateral sides being quite flat. Next, an Al 2 O 3 film 619 is formed by oxidising thermally or anodising the surface of Al monocrystal 618 (Fig.10F). This oxide film 619 is thin and quite fine because it is formed by oxidisation of monocrystal Al. The anodised film is especially fine. Next, a polysilicon layer 620 is formed with the CVD method, and made the upper electrode of the capacitor (Fig. 10G). Afterwards, an interlayer insulation film 621 is formed, a contact hole is opened above the source, and an Al source electrode 622 is deposited by sputtering (Fig.10H). The memory cell capacitor made in this way has small area, with its element surface area being less than or equal to that of the drain region, and so is suitable for higher integration, wherein the area of capacitor, i.e., the entire area of oxide film including the side face of Al monocrystal is sufficiently large, and the oxide film is thin and fine. Furthermore, the dielectric constant of Al 2 O 3 is of high value, that is, about 2.5 times that of SiO 2 , and thus a capacitor with large capacity can be constituted. It should be noted that the present invention is also applicable to PMOSFET, and furthermore, the capacitor may be constituted on the source side instead of on the drain side. Example 3 Fig.11 shows another circuit to which the present invention is applicable. This circuit is used as a sample-and-hold circuit or switched capacitor circuit, with a capacitor connected to a drain region common to two MOSFETs. Figs. 12 and 13 are typical cross-sectional views showing device structures for implementing the circuit shown in Fig. 11. The device shown in Fig. 12 shares a drain 615, in which the capacitor is constituted such that A1 monocrystal 618 is deposited, in self-coordinated manner, on the drain of two nMOSFETs having polysilicon gates 614A, 614B, sources 616A, 616B and source electrodes 622A, 622B, using the selective growth method, in the same way as in Fig. 9. The device of Fig. 13 has a further increased capacitance by constituting a capacitor in such a way that two contact holes are formed by removing two portions of oxide film above the drain 615. A1 monocrystals 618A, 618B are deposited in a self-coordinated manner on the two exposed portions of the drain, by the selective growth method. Al 2 O 3 films 619A, 619B are formed by surface oxidation, and then a polysilicon electrode 620 is formed by the CVD method. Each device as shown in Figs. 12 and 13 has a capacitor with large capacity and small element surface area, whereby the same effects as those in example 1 can be provided. It should be noted that the present invention is not limited to the above circuits, but is applicable to semiconductor devices incorporating capacitors as shown in the following examples 4 to 7. Example 4 Fig. 14 shows an equivalent circuit of a semiconductor device that can be manufactured according to the present invention. This device is an example of DRAM storage cell, wherein nMOS transistor 521 for read/write and an electrostatic capacitive element 522 for accumulation of electric charges (with a structure as just described) are formed on a semiconductor substrate, and further, a bit line 523 and a word line 524 are wired. To improve the degree of integration for DRAM, it is necessary to secure a capacitance of 10pF with small area, and form a reliable charge accumulation element of dielectric layer in the capacitive portion. As previously described, according to the present invention, the capacitive element satisfying such a condition can be implemented so that the degree of integration in DRAM can be improved. Example 5. Fig. 15 shows an exemplary circuit diagram of a photoelectric transfer element of the type in which carriers are accumulated in a base region as the control electrode region and a signal is read with an emitter follower circuit, to which the present invention is applicable. This example comprises an npn-type phototransistor 531, a capacitor 532 added onto a control electrode as required, a reset pMOS transistor 533 for clamping base potential, an emitter reset nMOS transistor 534 for extinguishing carriers accumulated by connecting an emitter to a predetermined reference voltage and forward biasing the base emitter, read nMOS transistors 535 and 537, an accumulation capacitor 536 and a load capacitor 538(with the structure described in the preceding examples), which are formed on a semiconductor substrate. The basic structure is disclosed in European Laid-Open Patent Application No. 0132076 and a corresponding U.S. Patent No. 4,791,469. The area of the accumulation capacitor 536 may normally occupy 10 to 25% that of a monocrystal semiconductor substrate on which the photoelectric transfer element is formed. Accordingly, by applying the present invention, the accumulation capacitor can be made smaller, so that the area of photoelectric transfer element chip can be reduced by 5 to 20% as compared with a conventional one. Example 6. Fig. 16 shows an exemplary circuit diagram of an operational amplifier to which the present invention is applicable. This operational amplifier comprises an input amplifier 541, an amplifying stage amplifier 542, an output stage amplifier 543 and a phase compensating capacitor 544 (with the structure described in the preceding example), which are formed on the same semiconductor substrate. In general, in the operational amplifier, the phase compensating capacitor 544 is added between input and output of amplifying stage where input and output are in reversed relation. A major purpose of the phase compensating capacitor is to stabilize the operation of circuit by biasing the frequency component more than or equal to that in the frequency characteristics of amplifying stage. However, as previously described, when a capacitor having bad frequency characteristics with conventional technique is used, the effects of phase compensating capacitor cannot be sufficiently obtained. On the contrary, according to the present invention, a capacitor having excellent frequency characteristics can be used, so that the effects of phase compensating can be sufficiently exhibited, and the operation of circuit can be made stable. Example 7 Fig. 17 shows an example of a comparator circuit to which the present invention is applicable. A comparator of this example comprises amplifiers 551, 552 and 553, capacitors 554 and 555(with the structure described in the preceding examples), and switches SW1-SW4. First, the operation of the comparator will be outlined. In a state in which switches SW1, SW3, SW4 are ON, and SW2 is OFF, the capacitor 554 is charged with the input voltage V 1 and the offset voltage of amplifier 551, and the capacitor 555 is charged with the output voltage of amplifier 551 and the offset voltage of amplifier 552. Next, switches SW1, SW3, SW4 are turned OFF, and SW2 is turned ON, and then the voltage V 1 used for charging and the input voltage V 2 are compared. Hereby, the capacitor 555 and the amplifiers 552, 553 are used to increase the gain of comparator, with the dimensions being determined depending on the needed gain. With conventional MOS capacitors, there is a disadvantage that in forming the capacitors 554, 555, parasitic capacitances would be likely to occur on the input side of amplifier, to turn OFF switches SW3 and SW4, and place the capacitors in high impedance state on one side thereof, which might cause the capacitance division due to the capacitors 554, 555 and parasitic capacitance of each capacitor, and increase the offset voltage of comparator. Furthermore, with conventional capacitors, there is a disadvantage that the charge speed might be restricted owing to parasitic resistance existing in series with capacitor. On the contrary, according to the present invention, as parasitic capacitance and parasitic resistance can be reduced significantly, it is possible to fabricate the comparator with smaller offset and faster speed than is conventional. As shown in the above examples, a capacitor can be constituted by selectively depositing Al in self-coordinated manner at a desired position on the semiconductor substrate, as required in the circuit design, and oxidising its surface. As above described, according to the foregoing examples of the present invention, it is possible to reduce device dimensions while increasing the capacitance of capacitor, and thus, to provide higher integration and faster operation speed of a semiconductor device. Furthermore, the semiconductor device manufacturing process is simplified. The film forming method suitable for the present invention is to form a deposited film by the surface reaction on an electron-donative substrate by use of a gas of an alkylaluminium hydride and hydrogen gas (hereinafter called the Al-CVD method). Particularly, by use of monomethylaluminium hydride (MMAH) as the starting gas or dimethylaluminium hydride (DMAH) as the starting gas, and H 2 gas as the reactive gas, and heating the substrate surface under the mixture of these gases, an Al film of good quality can be deposited. Here, during the selective deposition of Al, it is preferable to maintain the surface temperature at the decomposition temperature of the alkylaluminum hydride or higher and less than 450°C, more preferably 260°C to 440°C. As the method for heating the substrate to the above-mentioned temperature range, there are direct heating and indirect heating. Particularly, by maintaining the substrate at the above-mentioned temperature by direct heating, an Al film of good quality can be formed at high deposition speed. For example, when the substrate surface temperature during Al film formation is made 260°C to 440°C which is more preferable temperature range, a film of good quality can be obtained at higher deposition speed of 300 Å to 5000 Å/min. which is higher than in the case of resistance heating. As such direct heating method (substrate itself is heated by direct transmission of the energy from the heating means to the substrate), for example, lamp heating by means of halogen lamp, xenon lamp, etc. may be included. As the method for indirect heating, there is resistance heating, by which heating can be performed by use of a heat-generating body, etc. provided at the substrate supporting member for supporting the substrate to form deposited film arranged in the space for formation of the deposited film. By applying the CVD method to the substrate having the electron-donative surface portion and the non-electron donative surface portion co-present thereon, a single crystal of Al is formed under good selectivity only on the electron-donative substrate surface portion. The Al thus formed will have all of excellent characteristics desirable for the electrode/wiring material. That is, reduction of generation probability of hillock, reduction of generation probability of alloy spike will be accomplished. This may be considered to be due to the fact that substantially no or extremely small formation of alloy spike, etc. on account of the eutectic reaction with the subbing silicon, etc. is seen, because Al of good quality can be formed on the surface comprising a semiconductor or an electro-conductive member as the electron-donative surface, and also the Al is excellent in crystallinity. And, when employed for the electrode of a semiconductor device, an effect surpassing the concept of the Al electrode which has been contemplated in the prior art, and could not be even expected in the prior art can be obtained. Having described above about the fact that the Al deposited on an electron-donative surface, for example, within the opening with the semiconductor substrate surface exposed becomes to have a single crystalline structure, according to the Al-CVD method, a metal film composed mainly of Al as described below can be also selectively deposited, and its film quality also exhibits excellent characteristics. For example, in addition to a gas of an alkylaluminium hydride and hydrogen, a gas containing Si atoms such as SiH 4 , Si 2 H 6 , Si 3 H 8 , Si(CH 3 ) 4 , SiCl 4 , SiH 2 Cl 2 , SiHCl 3 , or the like, a gas containing Ti atoms such as TiCl 4 , TiBr 4 , Ti(CH 3 ) 4 , etc., a gas containing Cu atoms such as copper bisacetylacetonate Cu(C 5 H 7 O 2 ), copper bisdipivaloylmethanite Cu(C 11 H 19 O 2 ) 2 , copper bishexafluoroacetylacetonate Cu(C 5 HF 6 O 2 ) 2 , etc. may be introduced in a suitable combination to form a gas mixture atmosphere, thereby forming an electrode by selective deposition of an electroconductive material such as Al-Si, Al-Ti, Al-Cu, Al-Si-Ti, Al-Si-Cu, etc. The Al-CVD method as described above is a film forming method excellent in selectivity, and also the surface characteristic of the film formed has good surface characteristic. Hence, by application of a non-selective film forming method to the next deposition step, Al or a metal film composed mainly of Al can be also formed on the Al film selectively deposited as described above and SiO 2 , etc. as the insulating film, whereby a suitable metal film having high usability for general purpose as the wiring of semiconductor device can be obtained. Specific examples of such metal film include the following. There may be included combinations of Al, Al-Si, Al-Ti, Al-Cu, Al-Si-Ti, Al-Si-Cu, etc. deposited selectively with Al, Al-Si, Al-Ti, Al-Cu, Al-Si-Ti, Al-Si-Cu, etc. As the film forming method for non-selective deposition, there are other CVD methods than the Al-CVD method as described above, the sputtering method, etc. (Film forming Apparatus) Next, a suitable film forming apparatus for forming the electrode according to the present invention is described. Fig.18 to Fig. 20 show schematically a sequential metal film forming apparatus suitable for applying the film forming method as described above. The sequential metal film forming apparatus, as shown in Fig. 18, is constituted of loadlock chamber 311 connected mutually communicated under shielding from outer air through the gate valves 310a to 310f, a CVD reaction chamber 312 as the first film forming chamber, an Rf etching chamber 313, a sputtering chamber 314 as the second film forming chamber and a loadlock chamber 315, and the respective chambers are constituted reducible in pressure by evacuation with the evacuation systems 316a to 316e. Here, the above loadlock chamber 311 is a chamber for replacing the substrate atmosphere before deposition treatment with H 2 atmosphere after evacuation in order to improve the throughput characteristic. The next CVD reaction chamber 312 is a chamber for selective deposition on the substrate according to the Al-CVD method as described above under normal pressure or reduced pressure, in which a substrate holder 318 having a heat-generating member 317 which can heat the substrate to be formed to a range of 200°C to 450°C is provided internally, and starting gases such as alkylaluminum hydride bubbled and gasified in the bubbler 319-1 are introduced into the chamber through the starting gas introducing line 319 for CVD, and also hydrogen gas as the reactive gas is introduced through the gasline 319'. The next Rf etching chamber 313 is a chamber for carrying out cleaning of the substrate surface after selective deposition (etching) under Ar atmosphere, and internally thereof are provided at least a substrate holder 320 capable of heating the substrate to a range of 100°C to 250°C and an electrode line for Rf etching 321, and also an Ar gas feeding line 322 is connected. The next sputtering chamber 314 is a chamber for depositing non-selectively a metal film by sputtering under Ar atmosphere on the substrate surface, and internally thereof are provided a substrate holder 323 heated within a range of 200°C to 250°C and a target electrode 324 for mounting a sputter target material 324a, and also an Ar gas feeding line 325 is connected. The final loadlock chamber 315 is a control chamber before taking out the substrate after completion of the metal film deposition into the outer air, and constituted so that the atmosphere may be replaced with N 2 . Fig. 19 shows another constitutional example of a sequential metal film forming apparatus suitable for applying the film forming method as described above, and the same portions as described above in Fig. 18 are made the same symbols. The difference of the apparatus in Fig. 19 from that in Fig. 18 resides in that a halogen lamp 330 is provided as the direct heating means and the substrate surface can be directly heated, and for that purpose, the substrate holder 312 is provided with a nail 331 for holding the substrate under suspended state. By heating directly the substrate surface with such constitution, the deposition speed can be further improved as described above. The sequential metal film forming apparatus with the above constitution, as shown in Fig. 20, is substantially equivalent to one with the structure having the above loadlock chamber 311, the CVD reaction chamber 312, the Rf etching chamber 313, the sputtering chamber 314, the loadlock chamber 315 connected mutually to one another with the conveying chamber 326 as the relay chamber. With this constitution, the loadlock chamber 311 functions also as the loadlock chamber 315. In the above conveying chamber 326, as shown in the Figure, an arm 327 as the conveying means reversibly rotatable in the AA direction and stretchable in the BB direction is provided, and with the arm 327, as shown in the arrowhead in Fig.21 , the substrate can be moved following the steps successively from the loadlock chamber 311 to the CVD chamber 312, the Rf etching chamber 313, the sputtering chamber 314, the loadlock chamber 315 without exposure to outer air. (Film Forming Procedure) A film forming procedure for forming the electrode and wiring is described. Figs. 22A to 22D are schematic perspective views for illustration of the film forming procedure for formation of the electrode and wiring. First, the outline is described. A semiconductor substrate having openings formed on an insulating film is prepared, which substrate is arranged in a film forming chamber, and its surface is maintained at, for example, 260°C to 450°C to deposit selectively Al at the portion where the semiconductor is exposed according to the hot CVD method in a mixed atmosphere of DMAH as the alkylaluminum hydride and hydrogen gas. Of course, as described above, a metal film composed mainly of Al such as Al-Si, etc. may be also deposited selectively by introducing a gas containing Si atoms, etc. Next, on the Al selectively deposited by the sputtering method and the insulating film, Al or a metal film composed mainly of Al is non-selectively formed. Then, by patterning of the metal film non-selectively deposited to a desired wiring shape, electrodes and wirings can be formed. Referring next to Fig. 19 to Fig. 22D description is made in more detail. First, a substrate is prepared. As the substrate, for example, a single crystalline Si wafer having an insulating film provided with openings with respective apertures provided thereon is prepared. Fig. 22A is a schematic view showing a part of the substrate. Here, 401 is a single crystalline silicon substrate as a conductive substrate, 402 a thermally oxidized silicon film as the insulating film (layer). 403 and 404 are openings (exposed portions), having apertures different from each other. 410 is the groove bottom with Si exposed. The procedure for forming Al film which becomes the electrode as the first wiring layer on the substrate is as follows with Figs. 22A to 22D. First, the substrate as described above is arranged in the loadlock chamber 311. Hydrogen is introduced into the loadlock chamber 311 to make it under hydrogen atmosphere. And, the reaction chamber 312 is internally evacuated to approximately 1 x 10 -8 Torr (1 Torr = 133.32 Pa) by the evacuation system 316b. However, Al film can be formed even if the vacuum degree within the reaction chamber 312 may be worse than 1 x 10 -8 Torr. And, the gas of DMAH bubbled from the gasline 319 is fed. For the carrier gas for the DMAH line, H 2 is employed. The second gasline 319' is for H 2 as the reaction gas, and by flowing H 2 through the second gas line 319' and controlling the opening degree of the slow leak valve not shown to adjust the pressure within the reaction chamber 312 to a predetermined value. A typical pressure in this case is preferably about 1.5 Torr. Through the DMAH line, DMAH is introduced into the reaction tube. The total pressure is made about 1.5 Torr, and the DMAH pressure 5.0 x 10 -3 Torr. Then, current is passed to the halogen lamp 330 to heat directly the wafer. Thus, Al is selectively deposited. After elapse of a predetermined deposition time, feeding of DMAH is once stopped. The predetermined deposition time of the Al film deposited in this process is the time until the thickness of the Al film on the Si (single crystalline silicon substrate 1) becomes equal to the film thickness of the SiO 2 (thermally oxidized silicon film 2), and can be determined previously by experimentation. The temperature of the substrate surface by direct heating at this time is made about 270°C. According to the steps up to this stage, the Al film 405 is selectively deposited within the openings and the grooves as shown in Fig. 22B. All of the steps as described above are referred to as the first film forming step for formation of electrode within contact hole. After the above first film forming step, the CVD reaction chamber 312 is evacuated until reaching a vacuum degree of 5 x 10 -3 Torr or lower by the evacuation system 316b. At the same time, the Rf etching chamber 313 is evacuated to 5 x 10 -6 Torr or lower. After confirmation that the both chambers have reached the above vacuum degree, the gate valve 310c is opened, the substrate moved from the CVD reaction chamber 312 to the Rf etching chamber 313 by the conveying means, and the gate valve 310c closed. The substrate is conveyed to the Rf etching chamber 313, and the Rf etching chamber 313 is evacuated by means of the evacuation system 316c until reaching a vacuum degree of 10 -6 Torr or lower. Then, argon is fed through the argon feeding line 322 for Rf etching, and the Rf etching chamber 313 maintained under an argon atmosphere of 10 -1 to 10 -3 Torr. The susbtrate holder 320 of Rf etching is maintained at about 200°C, Rf power of 100 W supplied to the electrode for Rf etching 321 for about 60 seconds, and discharging of argon is caused to occur within the Rf etching chamber 313 for about 60 seconds. By doing so, the surface of the substrate can be etched with argon ions to remove unnecessary surface layer of the CVD deposited film. The etching depth in this case is made about 100 Å in terms of the oxide. Here, surface etching of the CVD deposited film is effected in the Rf etching chamber, but since the surface layer of the CVD film of the substrate conveyed through vacuum contains no oxygen, etc., no Rf etching may be effected. In that case, the Rf etching chamber 313 function as the temperature changing chamber for effecting temperature change within a short time, when the temperatures in the CVD reaction chamber 12 and the sputtering chamber 314 are greatly different. In the Rf etching chamber 313, after completion of Rf etching, flowing of argon is stopped, and the argon within the Rf etching chamber 313 is evacuated. After the Rf etching chamber 313 is evacuated to 5 x 10 -6 Torr and the sputtering chamber 314 to 5 x 10 -6 Torr or lower, the gate valve 310d is opened. Then, the substrate is moved from the Rf etching chamber 313 to the sputtering chamber 314 by means of a conveying means, followed by closing of the gate valve 310d. After the substrate is conveyed to the sputtering chamber 314, the sputtering chamber 314 is made under an argon atmosphere of 10 -1 to 10 -3 Torr similarly as in the Rf etching chamber 313, and the temperature of the substrate holder 323 for mounting the substrate set to about 200 to 250°C. And discharging of argon is effected at a DC power of 5 to 10 kw to cut a target material such as Al or Al-Si (Si: 0.5%) and effect film formation of a metal such as Al, Al-Si, etc. at a deposition speed of about 10000 Å/min. on the substrate. This step is a non-selective deposition step. This is called the second film forming step for formation of the wiring to be connected to the electrode. After formation of a metal film of about 5000 Å, flowing of argon and application of DC power are stopped. After evacuation of the loadlock chamber 311 to 5 x 10 -3 Torr or lower, the gate valve 310e is opened and the substrate moved. After the gate valve 310e is closed, N 2 gas is permitted to flow into the loadlock chamber 311 until reaching atmospheric pressure, the gate valve 310f opened and the substrate taken out of the apparatus. According to the second Al film deposition step as described above, the Al film 406 can be formed on the SiO 2 film 402. And, by patterning the Al film 406 as shown in Fig. 22D , a wiring with a desired shape can be obtained. (Experimental Examples) In the following, how excellent the above-described Al-CVD method is and how good the quality of the Al film deposited within the openings is are described based on experimental results. First, as the substrate, a plurality of N-type single crystalline silicon wafers were prepared, which are thermally oxidized on the surface to form SiO 2 of 8000 Å, and have various openings with various apertures from 0.25 µm x 0.25 µm square to 100 µm x 100 µm square patterned to have the subbing Si single crystal exposed (Sample 1-1). These are subjected to formation of Al films according to the Al-CVD method under the conditions as described below. Under the common conditions by use of DMAH as the starting gas, and hydrogen as the reaction gas, a total pressure of 1.5 Torr, a DMAH partial pressure of 5.0 x 10 -3 Torr, the power amount passed through the halogen lamp is adjusted and the substrate surface temperature set within the range of 200°C to 490°C to form films. The results are shown in Table 1. As can be seen from Table 1, at a substrate surface temperature by direct heating of 260°C or higher, Al is deposited selectively at a high deposition speed of 3000 to 5000 Å/min. within the openings. When the characteristics of the Al film within the openings at substrate surface temperature range of 260°C to 440°C are examined, they are found to be excellent such that no carbon is contained, with resistivity being 2.8 to 3.4 µΩcm, reflectance 90 to 95%, hillock density of 1 µm or higher 0 to 10 and substantially no spike generation (destruction probability of 0.15 µm junction). In contrast, at substrate surface temperatures of 200°C to 250°C, the film is found to be considerably good as compared with the prior art although the film quality is slightly worse as compared with the case of 260°C to 440°C, but the deposition speed is 1000 to 1500 Å/min., which can never be said to be sufficiently high. When the substrate surface temperature becomes 450°C or higher, the characteristics of the Al film with the openings are lowered with the reflectance becoming 60% or less, hillock density of 1 µm or more 10 to 10 4 cm -2 , alloy spike generation 0 to 30%. Next, description is made about how suitably the method as described above can be used to fill openings such as a contact hole or a through-hole. That is, it can be also preferably applied to the contact hole/through-hole structure comprising the material as described below. On the sample 1-1 as described above, an Al film is formed on a substrate (sample) as described below under the same conditions as when the Al film is formed. On a single crystalline silicon as the first substrate surface material is formed a silicon oxide film according to the CVD method as the second substrate surface material, and patterning effected according to the photolithographic steps to have the single crystalline silicon surface partially exposed. The film thickness of the thermally oxidized SiO 2 film has a film thickness of 8000Å, the exposed portion of the single crystalline silicon a size of 0.25 µm x 0.25 µm to 100 µm x 100 µm. Thus, sample 1-2 is prepared (hereinafter such samples are represented as "CVD SiO 2 (hereinafter abbreviated as SiO 2 )/single crystalline silicon"). Sample 1-3 is boron doped oxide film formed by normal pressure CVD (hereinafter abbreviated as BSG)/single crystalline silicon, sample 1-4 phosphorus doped oxide film formed by normal pressure CVD (hereinafter abbreviated as PSG)/single crystalline silicon, sample 1-5 phosphorus and boron doped oxide film formed by normal pressure CVD (hereinafter abbreviated as BSPG)/single crystalline silicon, sample 1-6 nitride film formed by plasma CVD (hereinafter abbreviates as P-SiN)/single crystalline silicon, sample 1-7 hot nitride film (hereinafter abbreviated as T-SiN)/single crystalline silicon, sample 1-8 nitride film formed by low pressure CVD (hereinafter abbreviated as LP-SiN)/single crystalline silicon, sample 1-9 nitride film formed by means of an ECR apparatus (hereinafter abbreviated as ECR-SiN)/ single crystalline silicon. Further, according to all combinations of the first substrate surface materials (18 kinds) and the second substrate surface materials (9 kinds), samples 1-11 to 1-179 (note: sample Nos. 1-10, 20, 30, 40, 50, 60, 70, 80, 90, 100, 110, 120, 130, 140, 150, 160, 170 are lacking) are prepared. As the first substrate surface material, single crystalline silicon (single crystalline Si), polycrystalline silicon (polycrystalline Si), amorphous silicon (amorphous Si), tungsten (W), molybdenum (Mo), tantalum (Ta), tungsten silicide (WSi), titanium silicide (TiSi), aluminum (Al), aluminum silicon (Al-Si), titanium aluminum (Al-Ti), titanium nitride (Ti-N), copper (Cu), aluminum silicon copper (Al-Si-Cu), aluminum palladium (Al-Pd), titanium (Ti), molybdenum silicide (Mo-Si), tantalum silicide (Ta-Si) are employed. As the second substrate surface material, T-SiO 2 , SiO 2 , BSG, PSG, BPSG, P-SiN, T-SiN, LP-SiN, ECR-SiN are employed. For all of the samples as described above, good Al films comparable with the sample 1-1 could be formed. Next, on the substrate having Al deposited selectively as described above, Al is deposited non-selectively according to the sputtering method as described above, followed by patterning. As the result, the Al film formed according to the sputtering method, and the Al film selectively selected within the openings are found to be under the contact state with both electrically and mechanically high durability due to good surface characteristic of the Al film.

Claims: A method for producing a semiconductor integrated circuit device including a transistor having source and drain regions, a gate insulation film and a gate electrode, also including a capacitor disposed above and in contact with one of said source and drain regions, which method comprises the steps of: forming a rectangular opening of width W and length L, W≦L, in said gate insulation film to expose said one of said source and drain regions; depositing aluminium or aluminium based metal to produce a capacitor lower layer electrode in said opening; forming an insulation film over the exposed surface of said capacitor lower layer electrode; and forming a capacitor upper electrode on said insulation film; which method is characterised in that: said step of depositing aluminium or aluminium-based metal is performed by selective chemical deposition from a vapour including an alkylaluminium hydride and hydrogen, to produce said lower layer electrode with a rectangular parallelopiped shape and a height H, H>W; and said step of forming insulation film over the exposed surface of said capacitor lower layer electrode is performed by oxidisation of said exposed surface. A method as claimed in claim 1 wherein said alkylaluminium hydride is dimethyl aluminium hydride. A method as claimed in claim 1 wherein said vapour also includes a gas containing Si, Ti or Cu for the deposition of aluminium based metal. A method as claimed in any preceding claim wherein said step of forming insulation film is performed by thermal oxidisation. A method as claimed in any of claims 1 to 3 wherein said step of forming insulation film is performed by anodic oxidisation.

Inventors: INOUE SHUNSUKE, KIKUCHI SHIN, NAKAMURA YOSHIO, SAKASHITA YUKIHIKO, YUZURIHARA HIROSHI, INOUE, SHUNSUKE, KIKUCHI, SHIN, NAKAMURA, YOSHIO, SAKASHITA, YUKIHIKO, YUZURIHARA, HIROSHI
Applicants: CANON KK, CANON KABUSHIKI KAISHA
Application year: 1991
Main classification: H01L27
IPC codes: H01L27