Flash-EPROM memory with single metal level, erasable per blocks of cells

Abstract: A FLASH-EPROM memory with a single metal architecture may be erased by selectable banks of cells. The diffused source lines are not interconnected in the silicon but contacted by means of a set of PRIMARY source connection lines, purposely patterned in metal 1, through contacts which may be formed together with the drain contacts. The PRIMARY source connection lines are parallel to and alternate with a plurality of BIT LINES which are patterned in the same metal 1. The PRIMARY source connection lines are segmented and the aligned segments are intercepted by orthogonal SECONDARY source interconnection lines patterned also in the same metal 1 and extending through interruptions of the patterned BIT LINES. The electrical continuity of the BIT LINES in the interruption zones is realized by means of "crosses" patterned in the underlying poly 2 layer. The SECONDARY source interconnection lines are brought out of the matrix and may be individually selected through a dedicated circuitry for erasing selected groups of cells having their sources connected in common to the particular SECONDARY source line, without affecting the other cells of the matrix.

Description: FIELD OF THE INVENTION The present invention relates to a FLASH-EPROM memory or more briefly a FLASH memory, having a single metal architecture and wherein selectable sectors of the memory array may be separately erased. BACKGROUND OF THE INVENTION FLASH memories are rapidly finding numerous new fields of application. Their success is primarily due to the relatively small dimension of the unit cell, which is about equal to that of a traditional EPROM cell, coupled to the ability of being electrically erased. These characteristics ideally place FLASH memories between traditional EPROM memories (less expensive) and the EEPROM memories (much more expensive) from which they differ on one hand by being electrically erasable although the erasing can be carried out exclusively on the memory matrix as a whole, while an EEPROM memory may be erased byte by byte. On the other hand, a typical EEPROM unit cell is about four times larger than a FLASH cell. This explains why the FLASH memories have conquered large sectors of the market where it is important to have nonvolatile, large-capacity memories which may be electrically erased eventually, but whose cost is relatively moderate. One of the industrial sectors which is particularly interested to this type of memories is the automotive sector where on-board reprogramming of the memories is an indispensable requirement, e.g. for modifying the controlling parameters of a motor from time to time, or for recording the operating hystory of a motor between services, and the like. In this as in other areas of utilization of FLASH memories, it would be highly desirable to be able to erase not the memory as a whole, but only a selectable portion or sector thereof. Such a possibility would be extremely useful. In the automotive area for example, manufacturers would find useful to install a FLASH memory wherein a system's managing program (ABS, control parameters of the motor, etc.) could be permanently stored, while on the other hand being able to modify the data stored by the program itself (e.g. timing and carburation parameters, temperature, etc., which have been acquired during the use of the vehicle and which must be erased after having been read by the computer of the maintenance workshop). In a co-pending prior patent application of the same applicants, EP-A-0 486 444, a FLASH memory is described, wherein the erasing may be performed in a partialized manner on selectable portions of the memory matrix by fabricating the memory matrix with a two metal level architecture. The so-called diffused source lines constituting the source regions of the cells disposed on a same row of the memory matrix are not interconnected to form an electrically unique source node common to all the cells, as customary for these integrated devices. On the contrary, according to that invention, each source line is contacted through an individually selectable source connection line patterned in metal 2. However, FLASH-EPROM memory devices normally have a single metal level architecture, and the addition of a second level metallization, while permitting erasability per blocks of cells of the memory matrix will increase the cost of production for these devices to some extent and may be unpracticable for other reasons, under particular circumstances. OBJECTIVE AND SUMMARY OF THE INVENTION The main objective of the present invention is to provide a FLASH memory having a single metal level, wherein the erasing may be performed in a partialized manner on selectable portions of the memory matrix, without affecting other portions of the matrix. This objective is fully met by means of the FLASH memory object of the present invention, whose architecture contemplates the interruption of purposely formed, (PRIMARY) source connection lines, which are patterned in a first level metal layer (metal 1), parallel to the BIT LINES, and to which isolated "lines" of diffused source regions of memory cells arranged on a same "row" of the matrix are connected through contacts which may be conveniently formed in the same manner the drain contacts with the respective BIT LINES are customarily formed, and the connection in common of respective segments of the interrupted source connection lines by means of two or more SECONDARY source interconnection lines which intersect a plurality of alignment segments and are also patterned in the same first level metal layer where the (PRIMARY) source connection lines and the same BIT LINES parallel to the latter are patterned. These SECONDARY source interconnection lines may be brought out of the matrix and individually connected to an external selection circuit for enabling the selection of a certain group of cells having their source regions connected to a certain SECONDARY line. Being said SECONDARY source interconnection lines patterned in the same first level metal layer orthogonally to the BIT LINES and to the segmented PRIMARY source connection lines, the BIT LINES are interrupted at crossings with the SECONDARY source interconnection lines and the electrical continuity of each BIT LINE is implemented by means of an "electrical underpath" which is realized by utilizing patterned portions of an existing underlying conducting layer. e.g. a polysilicon layer of a second level (poly 2), in which the control gate lines (WORD LINES) of the memory cells are patterned, as customary in the art. An EPROM having such electrical underpaths is known from FR-A-2 572 836 for example. In this way the FLASH EPROM memory of the invention may be erased by selectable blocks of cells while being fabricable through a single metal layer standard fabrication process. The "electrical underpaths" made by means of "crosses" of polysilicon (poly 2) along each single BIT LINE of the matrix determine a certain increase of the electrical resistance of these lines and consequently an increase of the propagation delay of a logic signal along the same BIT LINES. However it has been observed that by limiting the number of interruptions of the source lines (columnwise) and therefore the number of electrical polysilicon by-passes for each BIT LINE, the increase of the propagation delay may be comfortably maintained within limits which are comtatible with an acceptable normal access time of the memory, which is established during the design of the memory device. For example, by employing four SECONDARY source interconnection lines in a memory matrix, which may be by-passed in pairs by utilizing two series of polysilicon crosses, i.e. two crosses of polysilicon along each BIT LINE, the memory matrix may be erased by four distinctly selectable blocks of cells, by biasing the cells of each selected block through a respective SECONDARY source interconnection line. The presence of two polysilicon crosses on each BIT LINE will not penalize in any remarkable manner the access time of the memory. BRIEF DESCRIPTION OF THE DRAWINGS The different aspects and advantages of the invention will become more evident through the following description of an embodiment and reference to the attached drawings, wherein: Figure 1 is a simplified schematic plan view showing the organization of the source interconnections by groups or sectors of the memory cell matrix and of the relative electrical underpaths, formed in poly 2, along the BIT LINES of the matrix; Figure 2 is a simplified partial sectional view along the section line II-II of Fig. 1; Figure 3 is a simplified partial sectional view along section line III-III of Fig. 1. DESCRIPTION OF A PREFERRED EMBODIMENT The schematic plan view of Fig. 1, shows an array of BIT LINES 1, of PRIMARY source connection lines 2 and of SECONDARY source interconnection lines 3, 4, 5 and 6, all patterned, in accordance with the instant invention, in a single metal layer (e.g. metal 1) which is normally present in these types of integrated devices. The simplified plan view does not show all the other features of the memory cell matrix which are not strictly pertinent to a clear illustration of the subject matter of the present invention. It is assumed that any skilled technician will be perfectly capable of visualizing any other structural feature which has not been shown in the figures. According to the present invention, each source connection line 2 is interrupted at point A, B and C. Each segment of PRIMARY source connection line may be electrically connected to the source regions (diffused source line) of a certain number of unit cells disposed along a same "row" of the matrix, through standard contacts which may be formed concurrently with the formation of the so-called drain contacts, which connects the drain region of each cell disposed along a same "column" of the matrix to a relative BIT LINE. Keeping in mind that in the illustration of Fig. 1 the "rows" extend vertically while the "columns" extend horizontally, the pattern of one diffused source line 9, which constitutes a source region common to cells disposed along a row of the matrix is shown. As customary each diffused source line 9 is formed parallel to and between two adjacent control gate lines (WORD LINES) 10 and 11, which are part of the gate structure of the cells disposed along two adjacent rows of the matrix, respectively. The contacts 12 between the diffused source region 9 to aligned segments of PRIMARY source lines 2 may be formed concurrently with the drain contacts 13 which notably connect each single drain region belonging to a given cell to a respective BIT LINE 1 to which the drain regions of all cells disposed along a "column" of the matrix are connected. Of course the arrangement depicted is repeated a certain number of times between any two spaced apart SECONDARY source lines 4 and 5 and so forth. Indeed the partial illustration of Fig. 1 must be intended modularly expanded in both directions. Theoretically, to each segment of a source interconnection line 2, shown in the simplified partial view of Fig. 1, an unlimited number of unitary memory cells may have their relative diffused source regions connected, as will be easily recognized by the skilled person. Each segment of each interrupted source connection line 2, is in turn connected in common with other segments of other interrupted source connection lines, aligned together, through an intersecting SECONDARY or auxiliary source interconnection line. These SECONDARY source interconnection lines are respectively indicated in Fig. 1 with 3, 4, 5 and 6, and are patterned in the same metal layer of first level. These SECONDARY source interconnection lines, 3, 4, 5 and 6, intersect orthogonally the respective series of segments of interrupted (PRIMARY) source connection lines 2. The SECONDARY source interconnection line runs orthogonally to the BIT LINES, through interruptions of the latter, and preferably are formed in pairs 3-4 and 5-6, for reducing the number of interruptions of the BIT LINES. The continuity of each BIT LINE 1 in these crossing zones with a pair of SECONDARY source interconnection lines 3-4 and 5-6, is realized by forming an electrical underpath 1p in a polycrystalline silicon layer of a second level (poly 2). The second level polysilicon layer (poly 2) in which these by-passes are patterned in the same conducting layer in which the control gate lines (WORD LINES) (10 and 11 in Fig. 1) of the memory matrix are normally patterned, as will be easily recognized by the skilled technician. These conducting by-passes 1p, made in poly 2, may be observed also in the partial sectional view of Fig. 2. The relative SECONDARY source interconnection line 5 is patterned in a metal layer which is deposited on a dielectric layer 7, which electrically isolates the patterned portions from the electrical by-passes 1p, patterned in poly 2. In the further sectional view of Fig. 3, the electrical connection between the electrical by-pass portion (1p) of polysilicon of second level (poly 2) and the respective truncated ends of an interrupted BIT LINE 1, patterned in the same first level metal layer, is shown. In the same metal layer a pair of distinct SECONDARY source interconnection lines 5 and 6, running orthogonally to the BIT LINES, are also patterned. The electrical connection is realized by forming two (high) contacts 8a and 8b, respectively, on the patterned portion 1p of second level polysilicon (poly 2). A cross section of two cells disposed on the same column and formed in adjacent rows is schematically visible in the cross section of Fig. 3. The respective channel regions between the common source diffusion 9 and the respective drain diffusions 15 are topped by the respective gate structures, each comprising a floating gate 14 topped by the control gate lines 10 and 11 (WORD LINES),respectively, which are patterned in the same polysilicon layer of second level (poly 2) as the electrical by-passes 1b. As it may be easily observed in Fig. 1, the four SECONDARY source interconnection lines: 3, 4, 5 and 6, patterned in metal 1 while requiring only two interruptions of the patterned BIT LINES, permit a subdivision of the memory matrix, for the purpose of allowing an erasing per groups, in four groups or banks of cells, which may be individually selected by means of a dedicated selection circuitry, in order to permit the erasing of one or more of these four groups in any combination among each other, without affecting the cells of the nonselected groups.

Claims: A FLASH-EPROM memory formed by a plurality of unit memory cells integrated in a semiconductor substrate, each cell having a drain region (15), a gate structure (10, 11, 14) and a source region (9), the cells being organized in a matrix of rows and columns and being individually addressable through a family of individually selectable parallel conducting word lines (10, 11) and a family of individually selectable parallel conducting bit lines (1) patterned in a first level metal layer disposed on an isolating dielectric layer (7), each word line of said family of word lines being part of said gate structure of the cells aligned along a certain row and each BIT LINE being connected through contacts (13) formed through said isolating dielectric layer to a drain region of the cells aligned along a certain column, the memory cells being erasable as a group by application of an erasing voltage to common source regions formed in said semiconducting substrate; the memory comprising a family of parallel, segmented, PRIMARY source connection lines (2), patterned in said first level metal layer , running parallel to and alternately with a plurality of said parallel bit lines ; each segment of said segmented PRIMARY source connection lines being connected to a common source region of unit cells disposed along a certain row of the matrix by means of a contact (12) formed through said isolating dielectric layer; a family of individually selectable parallel conducting SECONDARY source interconnection lines (3, 4, 5, 6), patterned in said first level metal layer, each orthogonally crossing and connecting in common a plurality of aligned segments of said PRIMARY source connection lines and orthogonally crossing said bit lines in interruption zones thereof; the electrical continuity of each of said bit lines in the interruption zones being realized by means of an electrical underpath (1p) through a patterned portion of an existing conducting layer, in which said word lines (10, 11) are patterned; the cells of said memory matrix being erasable in groups, having a common connected source region, through a selected SECONDARY source interconnection line. The FLASH-EPROM memory according to claim 1, wherein said SECONDARY source interconnection lines are in a number multiple of two and are physically arranged in pairs of parallel lines, each pair of SECONDARY source interconnection lines crossing respective bit lines at single interruption zones of the latter.

Inventors: NATALE VIRGINIA, PETROSINO GIANLUCA, SCARRA FLAVIO, NATALE, VIRGINIA, PETROSINO, GIANLUCA, SCARRA' FLAVIO
Applicants: SGS THOMSON MICROELECTRONICS, SGS-THOMSON MICROELECTRONICS S.R.L.
Application year: 1991
Main classification: H01L27
IPC codes: G11C16, G11C17, H01L21, H01L29, H01L27