PROCESS FOR PRODUCING SINGLE CRYSTAL OF OXIDE

Abstract: A process for producing a single crystal of SrLaGaO₄ by the Czochralski process using the following oxide as a melt of raw material: Sr x La y Ga z O w wherein z ≧ x, y ≧ x, 0.28 ≦ x ≦ 0.325, x + y + z =1, and w = (2x + 3y + 3z)/2. Preferably the melt is formed by rotating the raw material, and further preferably the single crystal is produced in an atmosphere containing reduced amounts of steam and carbon dioxide.

Description: This invention relates to a method of manufacturing monocrystals of oxide, and more particularly a method of manufacturing a substrate material for use in superconductor devices. The phenomenon of superconductivity is the most specific phenomenon among electro-magnetic characteristics manifested in substances, and development in various fields of applications is greatly expected for the utilization of a perfect conductivity, a perfect diamagnetic property and quantizing of magnetic flux. Among electronic devices utilizing superconductivity phenomena are included a high speed switch, a highly sensitive detecting element, a highly sensitive fluxmeter and many other electronic devices. As a superconductor which has been widely used in conventional superconductor devices, Nb₃Ge thin film formed on a substrate by using plasma sputtering technique may be mentioned. However, the critical temperature of Nb₃Ge thin film is at most 23 K. Therefore, it can be used only within temperatures of liquid helium. When liquid helium is used, however, the cost for cooling and the technological burden necessary to install liquefying and cooling equipment for helium are increased. In addition, resources for helium are extremely limited. These problems hindered use of liquid helium in the industrial field as well as for public welfare. Various investigations have been made for obtaining superconductors having high critical temperatures. Remarkable progress has been made in recent investigations on oxide superconductor thin films. As a consequence, the critical temperature of superconductors has become 77 K or higher. Thus, superconductors can operate by using inexpensive liquid nitrogen as cooling medium. In conventional methods, such oxide superconductor films have been formed on a MgO monocrystal substrate or a SrTiO₃ monocrystal substrate heated to a high temperature by using sputtering or vapor deposition technique. Among other monocrystals used as substrates, attention has been paid to sapphire, YSZ, silicon, gallium arsenide, LiNbO₃, GGG, LaGaO₃, LaALO₃, etc. In a conventional method of manufacturing superconductor thin films on a MgO monocrystalline substrate or a SrTiO₃ monocrystalline substrate, it is impossible to stably increase the superconduction critical current (Jc). Furthermore there is a problem that the superconduction critical temperature (Tc) is not stable. To form excellent epitaxial films, the substrate material is required to satisfy the following conditions. (a) To have excellent lattice matching with a thin film crystal. (b) No degradation of the film quality due to mutual diffusion at the time of epitaxially growing the film. (c) To have a high melting temperature of at least higher than 1000°C, since the substrate material is heated to a high temperature. (d) Monocrystals having excellent crystallinity are available. (e) To have electric insulating property. As oxide superconductors having high critical temperatures, many oxides have been reported such as oxide thin films of LnBa₂ Cu₃ O 7-x (x=0-1, Ln: Yb, Er,Y,H₀, Gd, Eu, Dy) B i -Sr-Ca-Cu-0 and oxide thin films of Tl-Ba-Ca-Cu-O. The lattice constants a and b of these oxides are all included in a range of 3.76 - 3.92Å. By rotating the coordinate system by 45 degrees, √ 2 ·a and √ 2 ·b can also be deemed as fundamental lattice dimensions, in which case the lattice constants a and b are expressed by 5.32 - 5.54Å. For magnesium oxide (MgO) presently used widely as a substrate material, a=4.203Å and the difference in the lattice constants reaches 7-11%, so that it has been extremely difficult to obtain excellent epitaxially grown films. This problem has also occurred for sapphire YSZ, silicon, gallium arsenide, LiNbO₃ and GGG. When compared with MgO, SrTiO₃ has a small difference of 0.4 - 4% in the lattice constant from the oxide superconductor thin film as well as an excellent lattice matching property. At present, however, SrTiO₃ can be prepared only by the Bernoulli method, and its crystal property is very poor so that only crystals having an etch pit density of larger than 10/cm² can be obtained. Accordingly, it is difficult to form an excellent epitaxially grown film on such substrate having poor crystal quality. Furthermore, it has been impossible to find a substrate of large size. LaGaO₃ monocrystal has a lattice constants of a = 5.496Å and b = 5.554Å. This would ensure a good lattice matching with an oxide superconductor. However, its phase transition occurs at about 150°C, so that there is a problem of twinning in the crystal. Accordingly, when actually using LaGaO₃ monocrystal as a substrate of a superconductor film, it is necessary to remove twinned crystals. LaAlO₃ monocrystal has lattice constants a=b=3.788Å and a good lattice matching with an oxide superconductor can be expected. However, since the melting point of the LaALO₃ monocrystal is very high of about 2100°C, it is extremely difficult to manufacture such monocrystal. In addition, such monocrystal is likely to contain twinned crystals. As described above, the conventional materials which have been used as a substrate for forming a superconducting film do not satisfy the above-described conditions such as good lattice matching property with the superconducting film and easy availability. Consequently it has been difficult to manufacture stable superconductor devices. As a result of various experiments, the present inventors have proposed a monocrystal substrate material capable of forming an epitaxially grown superconductor film, that is, a strontium-lanthanum-gallium oxide monocrystal substrate having K₂NiF₄ type crystal structure as shown below. The inventors have presented a method of forming an oxide superconductive film on this substrate with epitaxial growing method (Japanese Patent Application No. 63-323739). The difference in the lattice constants of SrLaGaO₄ monocrystal and an oxide superconducting film is extremely small, that is -1.6 - 2.6%. Their crystal structures are extremely similar to each other. Furthermore, the lattice matching between the SrLaGaO₄ monocrystal and an oxide superconductive film is excellent. In other words, both the SrLaGaO₄ monocrystal and the oxide superconductive film satisfy every required condition described above. However, in the manufacture of SrLaGaO₄ monocrystal, such problems as cracks, subgrains, cells, etc. are liable to occur so that it has been impossible to manufacture monocrystals at high efficiencies. Accordingly, it is an object of this invention to provide an improved method of manufacturing SrLaGaO₄ at a high efficiency without accompanying troubles such as cracks subgrains and cells. According to the method of this invention, SrLaGaO₄ expressed by the following formula is used as a melt of raw material and a monocrystal is formed by the Czochralski pulling method: Sr x La y Ga z O w where Z ≧ X, y ≧ X 0.28 ≦ X ≦ 0.325 x + y + z = 1 W = (2x + 3y + 3z)/2 Preferably, a melt of raw material is formed while rotating the raw material. Further, it is advisable to form SrLaGaO₄ monocrystal in an atmosphere in which the amount of steam (H₂O) and carbon dioxide (CO₂) are reduced. The inventors have made a number of researches regarding monocrystallization of SrLaGaO₄. Knowing the fact that, where crystals are grown from SrLaGaO₄ in the molten state cell, the grown phase of LaSr₂GaO₅ is contained so as to decrease the yield (as, for example, in WO 90/04857 published on 03.05.1990 and with the priority date of 17.10.1988), the inventors have investigated the quasi two dimensional phase diagram of 2SrO-La₂O₃-Ga₂O₃ and obtained a cut phase diagram as shown in Fig. 1. As a consequence, it was found that, for the purpose of avoiding LaSr₂GaO₅ entering into the SrLaGaO₄ monocrystal, it is necessary to shift the composition of a melt of raw material to a composition containing a lesser quantity of Sr. This invention is based on this fact. Thus, in the three dimensional phase diagram of 2SrO-La₂O₃-Ga₂O₃ as shown in Fig. 2, the composition of the melt of raw material is shifted toward the composition containing a lesser quantity of Sr. In other words, in this invention, Sr x La y Ga z O w is used as a melt of raw material to obtain an excellent SrLaGaO₄ monocrystal free from any LaSr₂GaO₅ cell. where: z ≧ x, y ≧ x, 0.28 ≦ x ≦ 0.325 x + y + z = 1 w = (2x + 3y + 3z)/2 As a result of many experiments, it was also found that the melt of raw material for growing SrLaGaO₄ crystals has characteristics different from a melt of usual oxide. More particularly, the melt of raw material for growing SrLaGaO₄ crystals has the tendency that the centre of convection flow current deviates from the centre of the crucible. When the convection centre deviates and becomes asymmetric, a very large strain is liable to occur in the crystal, and control of the crystal's growth becomes difficult. It is considered that this deviation of the centre of the convection flow and asymmetry are caused by the fact that since the flow speed of the convection flow is low and since the driving force of the convection flow itself is lower than that of the molten body of oxides, solid substances at the time of melting the raw materials have a tendency to be fixed at the centre of the convection flow due to precipitation. As a typical example, in a crucible having an inner diameter of 76 mm, the centre of the convection flow is formed in an area within 20 mm from the centre of the crucible. It is formed at a different position for each melting. When the centre of the convection flow deviates more than 5 mm, growth of the crystal becomes extremely difficult. Nothing this fact, according to a preferred aspect of the method of this invention, melting of raw materials is performed while the crucible is being rotated so as to make the centre of the convection flow and the centre of the crucible coincide with each other. As a result, when the rotation of the crucible is stopped, the centre of the convection flow is stable, that is, in coincidence with the centre of the crucible so that crystal growth can be made under an extremely stable condition. It was also found that, at a high temperature, the SrLaGaO₄ crystal reacts with steam and carbon dioxide to form a denatured layer on the surface of the crystal which contributes to the formation of subgrains and growth of cells. This reaction is especially active at a temperature above 800°C and forms a film of red-brown colour. The result of analysis of the composition shows that this film has a composition of: Sr: 18.2 at%, La: 11.2 at%, Ga: 2.4 at%, and O: 68.2 at%. The result of X ray diffraction tests showed that the film has a polyphase structure which cannot be fixed. When a denatured layer is formed on the surface of the crystal due to reactions with steam and carbon dioxide, not only are subgrains formed but also cells grow. In addition, even before seeding, a film of polyphase structure is formed on the surface which makes it difficult to conduct seeding. In view of these defects, according to a preferred aspect of this invention, seed crystals are pulled up in an atmosphere containing small quantities of steam H₂O and carbon dioxide CO₂. Then it becomes possible to stably obtain SrLaGaO₄ monocrystal. Especially when the volume ratio of the steam is made to be less than 500 ppm, and when the volume ratio of carbon dioxide is made to be less than 50 ppm, high quality SrLaGaO₄ monocrystal could be formed. In the accompanying drawings, Fig. 1 is a quasi two dimensional phase diagram of 2SrO -La₂O₃-Ga₂O₃ manufactured by the method of this invention; Fig. 2 is a three dimensional phase diagram of 2SrO-La₂O₃-Ga₂O₃; and Fig. 3 is a front view shoving the Czochralski pulling device. Some preferred embodiments of the method of this invention will now be described with reference to the accompanying drawings. Embodiment 1 Powders of SrCO₃, La₂O₃ and Ga₂O₃ were used as starting materials. These powders were mixed together at a ratio of Sr:La:Ga = 0.94:0.96:1.10 and the mixture was calcined at a temperature of 1000°C for effecting decarboxylation. Then the calcined mixture was pulverized and the resulting powder was pressed. The pressed body thus obtained was sintered at a temperature of 1300°C in the atmosphere to obtain about 1450 g of sintered SrLaGaO₄. This sintered body was placed in a platinum crucible having an outer diameter of about 80 mm, a height of about 80 mm and a wall thickness of 2 mm and then the sintered body was melted with high frequency heating. Since pure platinum deforms greatly at the time of use, it is advantageous to use a platinum crucible reinforced with zirconia being dispersed thereinto. A seed crystal of [100] orientation was prepared by using the sintered SrLaGaO₄, and a monocrystal of SrLaGaO₄ was grown by pulling the seed crystal with the Czochralski pulling method. At the first time, a [100] monocrystal of SrTiO₃ was used as the seed crystal. After a monocrystal of SrLaGaO₄ has been obtained, this monocrystal having a [100] orientation was used as the seed crystal. The pulling conditions were: pulling speed: 1mm/h, crystal rotating speed of 25 rpm whereby a [100] orientation monocrystal having a diameter of 30 mm and a length of 70 mm was obtained. The resulting SrLaGaO₄ monocrystal was sliced to obtain substrates to be used for forming superconductive thin films. In the monocrystal thus obtained, no cell had grown and there was no heterogeneous substances admixed with the cell. In other words, the monocrystal thus obtained was extremely excellent. Similar growth was effected with different mol.ratios of Sr:La:Ga. This result is shown in the following Table I in which only the mol ratio of Sr:La:Ga was changed while other conditions unchanged. No. Mol Ratio Presence or absence of cell Heterogeneous substances admixed with cell Sr La Ga Composition of this invention 1 0.94 0.96 1.10 None None 2 0.93 1.035 1.035 None None 3 0.95 1.08 0.99 None None 4 0.97 1.015 1.015 None None 5 0.97 1.03 1.00 None None 6 Compositions other than this invention 0.93 0.87 1.20 Presence LaSr₂GaO₅ 7 0.93 1.20 0.87 " LaSr₂GaO₅ La₂O₃ 8 0.80 1.10 1.10 " LaSrGa₃O₇ La₄Ga₂O₉ 9 1.00 1.05 0.95 " LaSr₂GaO₅ 10 0.98 1.01 1.01 " LaSr₂GaO₅ 11 1.00 1.00 1.00 " LaSr₂GaO₅ As can be noted from Table I, where a melt of raw materials Sr:La:Ga having a mol ratio Sr x La y Ga z O w is used, where z ≧ x, y ≧ x, 0.28 ≦ x ≦ 0.325 x + y + z = 1 w = (2x + 3y + 3z)/2 an excellent SrLaGaO₄ monocrystal not containing LaSr₂GaO₅ cells can be obtained. Example 2 The second example of this invention is as follows. In this example, the crucible was rotated for forming molten raw material. In the same manner as in Example 1, 1450 g of a sintered body having a mol ratio Sr 0.93 La 1.035 Ga 1.035 O 4.035 was prepared. Fig. 3 is a front view of a Czochralski pulling device. This device comprises a melting portion A surrounded by a high frequency coil 1, a pulling portion B through which the pulling from the melting portion is performed and a rotating portion C for rotating the melting portion. In the melting portion A, the crucible 3 is disposed through a zirconia bubble layer. The crucible 3 contains a molten raw material SrLaGaO₄ 4. The container is made of zirconia refractories. The melting portion B is made of alumina refractories. A seed crystal is pulled up from the melting portion at a predetermined speed. In the rotating portion C, a rotatable table 7 is disposed on an alumina refractory member 6. The table 7 is rotatable by means of a shaft 8. The crucible 3 is made of platinum and has an outer diameter of about 80 mm, a height of about 80 mm and a wall thickness of 2 mm. The crucible is rotated at a speed of 1.0 rpm by the shaft 8. In the crucible, the sintered body is melted by high frequency heating. SrLaGaO₄ monocrystal is grown by using a seed crystal having [100] orientation by the Czochralski pulling method. The seed crystal pulling conditions were made equal to those of Example 1. Thus, pulling speed was made to be 1 mm/h, and the rotational speed of the crystal was made to be 25 rpm so as to obtain a [100] orientation monocrystal of SrLaGaO₄ having a diameter of 30 mm and a length of 70 mm. The SrLaGaO₄ thus obtained was free from any crack and exhibited an excellent crystal state. For investigating the effect of different rotational speeds of the crucible, the rate numbers of revolution thereof was changed to 0.1 rpm, 0.3 rpm and 1.0 rpm. The number of cracks of the monocrystals produced at these different speeds was measured. The result of measurement is shown in the following Table II in which the pulling was conducted five times at each experiment. rpm of crucible Number of cracks generated 0 (Stand still) 4 0.1 3 0.2 1 0.3 0 1.0 0 As can be clearly noted from Table II, when the rate of revolution of the crucible is equal to or less than 0.2 rpm, the number of cracks generated is large, whereas when the rate number of revolution exceeds 0.2 rpm the number of cracks generated decreases greatly. The result of the measurement may be interpreted as follows. When the rate of revolution of the crucible is equal to or less than 0.2 rpm, the molten substance rotates integrally with the crucible so that it is impossible to coincide the convection flow centre with the axis of rotating shaft, whereas when the rate of revolution exceeds 0.2 rpm, the convection flow centre comes to coincide with the axis of the rotating shaft and even when the rotation is stopped, the convection flow centre would be maintained in a state coincident with the axis of rotation. The rotation can be continued during the entire period of pulling or can be continued until the convection flow centre comes to coincide with the centre of the crucible after the raw material is melted by heating and then stops the rotation. Where the rotation is to be continued, it is essential to have the axis of the crucible, the axis of the rotating shaft and the axis of the high frequency coil perfectly coincident with each other. If these three axes do not coincide with each other a temperature vibration will likely to occur in the melt so that excellent crystals cannot be obtained. Example 3 This example is characterized in that in forming SrLaGaO₄ monocrystals with Czochralski pulling method an atmosphere containing lesser amounts of steam (H₂O) and carbon dioxide (CO₂) is used. More particularly, in a mixture of gas consisting of 1/4 volume ratio of O₂/N₂, a gas containing 10 ppm of H₂O and 5 ppm of H₂O and CO₂ is sent at a rate of 5 litres/minute. Under these conditions, monocrystal was pulled up with other conditions maintained to be the same as Example 1. More particularly, 1450 g of a sintered body having a composition ratio of Sr 0.93 La 1.035 Ga 1.035 O 4.035 was prepared in the same manner as in Examples 1 and 2, and this sintered body was put into a platinum crucible having an outer diameter of about 80 mm, a wall thickness of 2 mm, and a height of about 80 mm. While rotating the crucible at a speed of 1.0 rpm, the sintered body was melted by high frequency heating. A SrLaGaO₄ monocrystal was grown by the Czochralski pulling method using a seed crystal having a [100] orientation. The pulling conditions of the crystal were the same as those of Example 1. That is, by using a pulling speed of 1 mm/hour and rate of rotation of the crystal of 25 rpm, [100] orientation monocrystal having a diameter of 30 mm, and a length of 70 mm was obtained. As above described defect free excellent SrLaGaO₄ was obtained at a high efficiency. For investigating the effect of volume ratio of H₂O and CO₂ in the atmosphere, the volume ratio of H₂O and CO₂ in the atmosphere was varied and a monocrystal was grown in the modified atmosphere. The surface state at the initial stage of growth and the surface state after completion of growth were measured. The surface state at the initial state was measured by placing SrLaGaO₄ monocrystal in an electric furnace. The monocrystal was maintained for 6 hours at a temperature of 1450°C immediately below the epitaxially growing temperature. After cooling of the monocrystal, presence and absence of a film on the surface of the crystal was measured with an optical microscope and an X-ray diffraction method. The results of these measurements are shown in Tables III and IV, in which Table III shows the formation of subgrains after growth and the generation of cracks, while Table IV shows the result of measurement of the surface state at the initial state of growth. Reaction film No. Volume ratio Formation of subgrains Generation of cracks H₂O CO₂ 1 10 5 NONE NONE 2 500 5 " " 3 1000 5 YES YES 4 10 50 NONE NONE 5 500 50 NONE NONE 6 1000 50 NONE YES 7 10 100 YES YES 8 500 100 YES YES 9 1000 100 YES YES No. Volume ratio Reaction film H₂O CO₂ 1 10 5 NONE 2 500 5 NONE 3 1000 5 PRESENCE 4 10 50 NONE 5 500 50 NONE 6 1000 50 PRESENCE 7 10 100 PRESENCE 8 500 100 PRESENCE 9 1000 100 PRESENCE As can be clearly noted from Tables III and IV, where the volume ratio of H₂O is made to be equal to or less than 500 ppm and that of CO₂ is made to be equal to or less than 50 ppm, no reaction film is formed on the surface and there was no formation of subgrains and cracks. Thus, excellent crystals free from any subgrains and cracks could be formed at a high efficiency. Where the volume ratio of H₂O exceeds 500 ppm or where that of CO₂ exceeds 50 ppm, a reaction film was formed on the crystal and after completion of the crystal growth subgrains or cracks were formed. From these results, it can be noted that where monocrystals are grown in an atmosphere wherein the volume ratios of H₂O and CO₂ are decreased, it is possible to obtain defect free excellent monocrystals at a high efficiency. As above described, according to this invention, a melt of raw material to be expressed below is used and a monocrystal is formed by the Czochralski pulling method, and excellent SrLaGaO₄ monocrystals can be obtained at a high efficiency. Sr x La y Ga z O w where z ≧ x, y ≧ x, 0.28 ≦ x ≦ 0.325 x + y + z = 1 w = (2x + 3y + 3z)/2

Claims: A method of manufacturing a strontium-lanthanum-gallium oxide type monocrystal having a K₂NiF₄ type crystal structure by the Czochralski pulling method, the method comprising: a melting step of filling a crucible (3) with a raw material and heating the crucible to melt the raw material; and a pulling step of dipping a seed crystal in said melt (4) of raw material and pulling up said seed crystal so as to obtain a strontium-lanthanum-gallium oxide monocrystal; and characterised in that said melting step comprises a step of filling said crucible with said raw material and a step of heating to melt said raw material so as to obtain a melt of the raw material having a composition as specified below: Sr x La y Ga z O w where z ≧ x y ≧ x, 0.28 ≦ x ≦ 0.325 and x + y + z = 1 and w = (2x + 3y + 3z)/2 A method according to claim 1, wherein said raw material is melted whilst being rotated. A method according to claim 2, wherein said melting step comprises an initial heating step, in which the crucible (3) is rotated continuously until an axis of convection flow comes to coincide with an axis of said crucible, and a subsequent heating step of heating the raw material after the rotation is stopped. A method according to any preceding claim, wherein said seed crystal is pulled up in an atmosphere containing small quantities of H₂O vapour and CO₂. A method according to any preceding claim, wherein said seed crystal has a [100] orientation. A method according to any preceding claim, wherein said raw material is melted by high frequency heating while being rotated. A method according to any preceding claim, wherein said raw material is melted while an axis of said crucible (3) filled with said raw material is exactly coincident with the axis of a high frequency heating coil (1). A method according to any preceding claim, wherein rotation of the molten raw material (4) is continued during the entire period of the pulling of the seed crystal.

Inventors: NAKAMURA KOZO, NAKAMURA, KOZO,
Applicants: KOMATSU MFG CO LTD, KABUSHIKI KAISHA KOMATSU SEISAKUSHO
Application year: 1991
Main classification: C30B15
IPC codes: C30B15