Optical waveguide device

Abstract: An optical waveguide device comprising an optical waveguide (2, 2a, 2b) formed on a surface of a substrate (1) having an electro-optical effect, a pair of electrodes (5, 6) formed on a corresponding region above the optical waveguide (2, 2a, 2b) and receiving a driving electric signal thereacross, and a buffer layer (3) formed all over the substrate (1) including the optical waveguide (2, 2a, 2b), has a third electrode (10, 10a) formed on a corresponding region above the substrate (1), wherein a distribution of an electric field occurring in a vicinity of the optical waveguide (2, 2a, 2b) by an application of the electric signal is greatly changed in accordance with a change in a frequency of the electric signal, the third electrode (10, 10a) comprising a semiconductive layer and being disposed on the region spaced with a predetermined distance from the pair of electrodes (5, 6) formed on the corresponding regions above the optical waveguide (2, 2a, 2b) and being coupled to a direct current voltage, a low frequency voltage or a ground.

Description: The present invention relates to a method of suppressing DC drift of optical waveguide devices such as modulators, switches, distributors, or the like, used in an optical communication apparatus. A typical optical waveguide device used in an optical switch, an optical modulator, or the like, is constituted such that an electric field is applied to an optical waveguide formed on a surface of a substrate consisting of electrooptical crystal such as lithium niobate (LiNbO 3 ), or the like, so as to change a refractive index and thus switching or phase modulation of a light signal traveling through the optical waveguide can be carried out. As an example of such an optical waveguide device, a Mach-Zehnder type modulator is well known. A modulator of this type includes at least an optical waveguide formed on a surface of a Z-cut LiNbO 3 substrate and a pair of asymmetrical electrodes formed on corresponding regions above the optical waveguide. In such a structure, charges collected on the surface of the LiNbO 3 substrate by pyroelectric effect act on the asymmetrical structure of the electrodes and thus a disadvantage occurs in that a distribution of charges is made uneven and an adverse influence is exerted on characteristics of the device. Also, since a distribution of resistance, dielectric constant and capacitance of each portion of the structure or partial fine structure is delicately changed in accordance with the process conditions, the electrical equivalent circuit accordingly becomes complicated. This results in a problem in that a direct current (DC) component of an electrical signal applied across the electrodes greatly changes an application manner of the electric field with a long-term time constant and the optical response is also accordingly changed. This phenomenon is called a DC drift. To cope with the problem, various measures have been heretofore taken. However, a satisfactory and effective technique of solving the problem has not yet been proposed. "Phase Tuning in Optical Directional Coupler", O. Mikami et al, Japanese Journal of Applied Physics, Vol. 16 (1977) Supplement 16-1, pp 321-324, discloses an optical waveguide device in which three aluminium electrodes are formed on a LiNbO 3 substrate. However, this document is not concerned with the same problem as addressed here. Note, problems in the prior art will be explained in detail later in contrast with the preferred embodiments of the present invention. An object of the present invention is to provide a method of suppressing DC drift in an optical waveguide device. According to the present invention, there is provided a method of suppressing DC drift of an optical waveguide device comprising the steps of: forming an optical waveguide on a surface of a substrate having an electro-optical effect; forming a pair of electrodes on a corresponding region above the optical waveguide, which electrodes receive a driving electric signal thereacross; forming a third electrode on a corresponding region above the substrate so as to be disposed on a region spaced a predetermined distance from the pair of electrodes; applying to the said third electrode a direct current voltage or a low frequency voltage; and generating an electric field in a vicinity of the optical waveguide in accordance with the driving electric signal; characterized by forming said third electrode of a semiconductive layer; and by forming a buffer layer all.over the substrate including the optical waveguide. In an optical waveguide device formed on an electrooptical crystal substrate having a pyroelectric effect, it is preferable that a semiconductive layer of, e.g., silicon (Si) is formed on a buffer layer so as to make uniform a distribution of charges occurring in the vicinity of the surface of the optical waveguide. In this case, in the structure having a narrow electrode for signal line and a wide electrode for grounding, a potential on the semiconductive (Si) region on the outside of the electrode for signal line (i.e., on the opposite side of the electrode for grounding) is uniformly made equal because the silicon (Si) layer acts as a conductor in a low frequency band. As a result, a drawback arises in that the electric field to be concentrated in the vicinity of the electrode for signal line is dispersed into the outside semiconductive (Si) region and thus it is not effectively applied to the optical waveguide. To cope with this drawback, the above third electrode is provided on the outside of the electrode for signal line, i.e. on the opposite side of the electrode for grounding. By this structure, it is possible to cause a voltage drop in proportion to the distance between the electrode for signal line and the third electrode and thus concentrate the dispersed electric field on the vicinity of the electrode for signal line. Also, by suitably changing the thickness of the silicon (Si) layer between the electrode for signal line and the third electrode, it is possible to change a distribution of resistance therebetween to regulate a distribution of the voltage drop and thus concentrate the electric field more effectively. On the other hand, when a high frequency electric signal is applied to the pair of driving electrodes, charges in the silicon (Si) layer cannot follow a change in the.high frequency electric signal and thus the semiconductive layer functions as a dielectric. Also, by disposing the third electrode on a region spaced from the electrode for signal line with a sufficient distance, it is possible to reduce an influence exerted on the characteristic impedance of the optical traveling wave electrode. Furthermore, by employing a semiconductive layer having a relatively low resistance as the third electrode, it is possible to further reduce the influence exerted on the characteristic impedance. By applying a DC or low frequency voltage to the third electrode, it is possible to compensate for a fluctuation in operational characteristics occurring due to a DC drift, mechanical stress, or the like. In this case, it is preferable that a semiconductive layer consisting of material having a relatively high resistance, e.g., silicon (Si), is formed close to the electrode for signal line. The semiconductive layer may receive a voltage directly from an external power source, or may receive the voltage via a conductive layer, which is formed on the semiconductive layer at a position spaced from the electrode for signal line with a sufficient distance such that its presence does not greatly affect a characteristic impedance of the optical traveling wave electrode. By applying the voltage directly or indirectly to the semiconductive layer, it is possible to change a refractive index of the optical waveguide beneath the electrode for signal line and thus compensate for a fluctuation in operational characteristics. In this case, the semiconductive layer functions as a conductor with respect to a low frequency voltage and functions as a dielectric with respect to a high frequency voltage. Accordingly, the presence of the semiconductive layer has less influence on the characteristic impedance in the high frequency band of the applied voltage. Also, another semiconductive layer may be formed all over the buffer layer so as to improve temperature characteristics. In this case, by decreasing the thickness of the semiconductive layer in the vicinity of the electrode for signal and concentrating the electric field on the thinly formed portion, it is possible to realize the same effect as above. Reference will now be made, by way of example,. to the accompanying drawings, in which: Figs. 1A and 1B are a plan view and a sectional view, respectively, showing a structure of a prior art Mach-Zehnder type modulator; Figs. 2A and 2B are a plan view and a sectional view, respectively, of an optical waveguide device (optical modulator) which does not embody the present invention but is useful for understanding it; Figs. 3A and 3B are a plan view and a sectional view, respectively, showing a device for use in a first embodiment of the present invention; Figs. 4A and 4B are a plan view and a sectional view, respectively, showing another device for use in a second embodiment of the present invention; and Figs. 5A and 58 are a plan view and a sectional view, respectively, showing a further device for use in an embodiment of the present invention. For a better understanding of the preferred embodiments of the present invention, the problems in the prior art will be explained with reference to Figs. 1A and 1B which show a structure of a prior art Mach-Zehnder type modulator known from Japanese Unexamined Patent Application (Kokai) No. 62-73207. Note, Fig. 1B shows a sectional structure along the line A-A' in Fig. 1A. The illustrated structure shows an example using asymmetrical electrodes for a travelling wave. In the drawings, reference 1 denotes a Z-cut LiNbO 3 substrate and reference 2 denotes an optical waveguide including two-forked optical waveguides 2a and 2b. The optical waveguide 2 (2a,2b) is formed by effecting a striplike patterning of a Titanium (Ti)-deposited layer formed on a surface of the substrate 1 and then effecting a thermal diffusion of the Titanium into the substrate 1. Thus, the optical waveguide 2 (2a,2b) has a larger refractive index than that of the substrate 1. Also, to prevent a light propagating through the optical waveguide from being absorbed in driving electrodes (an electrode 5 for signal line and an electrode 6 for grounding), a dielectric buffer layer 3 is formed between the electrodes 5, 6 and the optical waveguide 2. The buffer layer 3 is translucent and has a smaller refractive index than that of the optical waveguide 2. The buffer layer 3 is comprised of, for example, silicon dioxide (SiO 2 ). The dielectric layer 3 electrically functions as a capacitance containing relatively high resistance material. Also, in an optical waveguide device using a substrate of Z-cut LiNbO 3 , a disadvantage occurs in that charges collected on the surface of the substrate by pyroelectric effect act on the asymmetrical structure of the electrodes formed on the buffer layer and thus an uneven distribution of charges is formed to have an adverse influence on characteristics of the optical waveguide device. In view of this, a semiconductive layer 4 comprised of, for example, silicon (Si), is formed between the buffer layer 3 and the electrodes 5, 6 and all over the buffer layer 3 (see Fig. 1B). By this structure, it is possible to make uniform the distribution of surface charges occurring due to a change in temperature or the like and stabilize the characteristics of the optical waveguide device. Furthermore, since the optical waveguide 2 is formed by diffusing the Titanium with high temperature into the LiNbO 3 substrate 1, its resistance, dielectric constant and capacitance are different from those of the bulk portion of the substrate 1. Additionally, a resistance of the surface of the LiNbO 3 substrate 1 is different from that of the bulk portion thereof due to the diffusing process. By the complicated distribution of the resistance, dielectric constant and capacitance of the above layers and partial fine structure, the electrical equivalent circuit also becomes complicated. As a result, a problem occurs in that a DC component of an electric signal applied across the electrodes 5, 6 greatly changes an application manner of the electric field with a long-term time constant in accordance with the process conditions and the optical response characteristics is also accordingly changed. Namely, a DC drift is caused. To cope with the problem, there has been taken measures to connect the electrodes 5, 6 of the modulator to an external power source by way of capacitance coupling and thus prevent a DC component of the power source from being directly applied to the modulator, or measures to connect a biasing DC power source to the electrode for signal line 5 by means of capacitance coupling and thus compensate a DC drift occurring due to some causes. According to the measures to employ an external power source by way of capacitance coupling, however, a drawback occurs in that the device is brought to an electrically open state seen from the power source and thus an adverse influence is exerted on the operation of the power source. A disadvantage also occurs in that an available frequency band of the power source is limited in dependence on the capacity thereof. On the other hand, according to the measures to employ a biasing DC power source by way of capacitance coupling, a drawback occurs in that a characteristic impedance of the traveling wave electrode for signal line fluctuates and thus it is impossible to satisfactorily carry out the modulation operation. Also, where a stress is applied to the optical waveguides for some causes, the refractive index of the optical waveguides is normally changed resulting in a fluctuation in operational characteristics of the modulator. To cope with the disadvantage, there has been heretofore taken measures to add a DC voltage to the application voltage so as to cancel a change in the refractive index occurring due to the stress. However, to take the measures to add a DC voltage to the application voltage is often difficult from a viewpoint of the limit of the dielectric strength of the DC power source. In view of the above problems, a structure or means other than the electrodes provided for switching or modulation needs to be provided for suppressing a DC drift and compensating a fluctuation in operational characteristics due to the DC drift, stress, or the like. Figures 2A and 2B show a structure of an optical modulator which does not embody the present invention, but is useful for understanding it. In the illustration, reference 1 denotes a substrate consisting of lithium niobate (LiNbO 3 ), i.e., a Z-cut LiNbO 3 substrate. On the surface of the substrate 1, a striplike optical waveguide 2 having a width of approximately 7 µm is formed. The optical waveguide 2 includes two forked optical waveguides 2a and 2b, which are formed such that the forking angle is 1° and the distance therebetween is 15 µm. The optical waveguide 2 (2a,2b) is formed by effecting a patterning of a Titanium (Ti)-deposited layer formed on the surface of the substrate 1 and then giving a heating of 10 hours with a temperature of 1050 °C to effect a thermal diffusion of the Titanium into the substrate 1. Reference 3 denotes a buffer layer 3, which is formed all over the substrate 1 including the optical waveguide 2 (2a,2b). The buffer layer 3 is comprised of silicon dioxide (SiO 2 ) and has a thickness of approximately 0.6 µm. Reference 5 denotes an electrode for signal line having a width of 7 µm and a thickness of approximately 10 µm, and reference 6 denotes an electrode for grounding having a thickness of approximately 10µm. The electrodes 5 and 6 are comprised of gold (Au) and formed by plating on corresponding regions (buffer layer 3) above the optical waveguides 2a and 2b, respectively. The electrode for grounding 6 is formed so as to be surrounded by the electrode for signal line 5. Also, reference 7 denotes a source for applying a driving electric signal across the electrodes 5 and 6, and reference 8 denotes a terminal resistor connected between the electrodes 5 and 6. Reference 10 denotes a third electrode having a thickness of approximately 10µm and comprised of gold (Au). The third electrode 10 is formed by plating on the outside of the electrode for signal line 5, i.e., on the opposite side of the electrode for grounding 6, and receives a DC or low frequency voltage fed from a power so,urce 20. In the present example, the third electrode 10 is disposed on a region (buffer layer 3) spaced with a distance of approximately 50 µm from the electrode for signal line 5. By this constitution, it is possible to decrease the influence exerted on the characteristic impedance of the optical waveguide 2 (2a,2b). Namely, by applying a DC voltage or a low frequency voltage below 5 to 6 kHz to the electrode 10, it is possible to change a refractive index of the optical waveguide 2a beneath the electrode for signal line 5. Note, the power source 20 is independent from the electric signal source 7 and thus.the mutual interference is not substantially present. Therefore, it is possible to easily compensate for a fluctuation in operational characteristics due to a DC drift, stress, or the like, by application of the DC or low frequency voltage to the electrode 10. Figures 3A and 3B show a device for use in a first embodiment of the present invention, the structure of which is a modification of that shown in Figs. 2A and 2B. In the present example, an electrode 10a comprised of a semiconductive layer of silicon (Si) is provided in place of the metal electrode 10 shown in Figs. 2A and 2B. The semiconductive electrode 10a is disposed on a region (buffer layer 3) spaced with a distance of approximately 15 µm from the electrode for signal line 5. In this case, by selecting a specific resistance of the semiconductive electrode 10a to be 100 Ωm and a thickness thereof to be 0.2 µm, the electrode 10a can function as a conductor or a dielectric. Namely, When the electrode 10a receives a DC voltage or a low frequency voltage below 500 to 600 Hz, it functions as an ordinary metal electrode. On the other hand, when the electrode 10a receives a high frequency voltage above 5 to 6MHz, it rather functions as a dielectric because its equivalent resistance becomes relatively high and thus charges cannot follow a change in the electric field. In this case, the presence of the semiconductive electrode 10a does not substantially have an influence on the characteristic impedance of the optical waveguide 2 (2a,2b). Also, since the semiconductive electrode 10a is disposed fully close to the electrode for signal line 5, it is possible to effectively change the refractive index of the optical waveguide 2a beneath the electrode for signal line 5. Therefore, it is possible to more effectively compensate for a fluctuation in operational characteristics due to the DC drift, stress, or the like, by application of the DC or low frequency voltage to the electrode 10a. Additionally, the device of Figs. 3A and 3B is produced according to the process conditions below. First, Titanium (Ti) is deposited on the Z-cut LiNbO 3 substrate 1 to have a thickness of approximately 90 nm and, using a photoresist, a waveguide pattern is formed on the Ti-deposited layer. The formed pattern acts as a mask. Then, a chemical etching is carried out to form a metal (Ti) pattern. The metal (Ti) pattern has a width of approximately 7 µm and includes a forked waveguide portion having a forking angle of 1° and a parallel waveguide portion having a length of 20 mm and spaced with a distance of 15µm from each other. Then, the metal (Ti) pattern is diffused into the substrate 1 with a heat of 1050 °C and a time of 10 hours in a wet O 2 atmosphere, so as to form a single mode optical waveguide 2 (2a,2b) having an optical wavelength of 1.5 µm. Next, the buffer layer (SiO 2 ) 3 having a thickness of 0.6 µm is formed by depositing on the substrate 1 including the optical waveguide. Then, the semiconductive layer (Si) 10a having a thickness of 0.1 µm and a length of 20 mm is formed by sputtering on a region (buffer layer 3) spaced with a distance of 15 µ m from the optical waveguide 2a. The semiconductive layer (Si) 10a has a specific resistance of approximately 10 kΩ · cm. Finally, the electrodes 5 and 6 comprised of gold (Au) and having a length of 20 mm and a thickness of 10 µm are formed by plating on corresponding regions (buffer layer 3) above the optical waveguide 2a, 2b. The metal (Au) electrodes 5 and 6 are spaced with a distance of 15µm from each other and constitute asymmetrical electrodes for a traveling wave. Note, the electrode for signal line 5 has a width of 7 µm. The operational voltage of the formed modulator is 5 V and the characteristic impedance of the electrodes for a traveling wave is 50 Ω. The value of the characteristic impedance is equal to that in the case that the semiconductive layer (Si) 10a is not provided. This means that the presence of the semiconductive layer does not have an influence on the characteristic impedance. Also, when the phase control corresponding to the operational voltage is carried out by means of the power source 20, a voltage of the power source 20 is 6 V and a frequency thereof is 10 Hz. These values are the same as those in Figs. 2A and 2B in which the metal electrode 10 is provided in place of the semiconductive electrode 10a. Note, the characteristic impedance of the electrodes for a traveling wave employed in Figs. 2A and 2B is 36 Ω. Figures 4A and 4B show a structure of a second device for use in a second embodiment of the present invention. In the present example, a semiconductive layer 4 comprised of silicon (Si) is added to the structure shown in Figs. 3A and 3B. The semiconductive layer 4 has a thickness of 0.1 to 0.2 µm and is formed between the buffer layer 3 and the electrodes 5, 6 and 10a and all over the buffer layer 3. In this case, by selecting a specific resistance of the semiconductive electrode 10a to be two figures smaller than that of the semiconductive layer 4, it is possible to concentrate an electric field generated by a voltage applied to the electrode 10a on the region between the electrodes 10a and 5. As a result, it is possible to effectively change the refractive index of the optical waveguide 2a beneath the electrode for signal line 5. Although the thickness of the semiconductive layer 4 is selected to be constant, it is not restrictive. For example, by partially changing the thickness of the semiconductive layer 4 and decreasing the thickness of the layer 4 at a desired portion on which an electric field should be concentrated, it is possible to realize the same effect as above. Figures 5A and 5B show a structure of a third device for use in a third embodiment of the present invention. In the present example, an electrode 10b comprised of gold (Au) is added to the.structure shown in Figs. 4A and 4B. In this case, the DC or low frequency voltage fed from the power source 20 is applied via the metal electrode 10b to the semiconductive layer 10a. In the structure shown in Figs. 5A and 5B, the semiconductive layer (Si) 4 having a thickness of 0.1 µ m is uniformly formed by sputtering on the buffer layer (SiO 2 ) 3 having a thickness of 0.5µm. Then, the semiconductive layer 10a having a thickness of 0.4 µm and a length of 20 mm is formed by sputtering on a region (semiconductive layer 4) spaced with a distance of 15 µm from the electrode for signal line 5. At this time, the patterning is carried out by a lift-off processing using a resist. Then, the asymmetrical electrodes 5, 6 for a traveling wave are formed by the same process as in Figs. 3A and 3B and, furthermore, the metal electrode 10b having a length of 20 mm is formed by plating on a region (semiconductive layer 10a) spaced with a distance of 45 µm from the electrode for signal line 5. The operational voltage of the formed modulator is 5 V and the characteristic impedance of the electrodes for a traveling wave 5, 6 is 45 Ω. In this constitution, when the phase control corresponding to the operational voltage is carried out by means of the power source 20, a voltage of the power source 20 is 7.2 V. Also, by the provision of the semiconductive layer 4, it is possible to suppress a fluctuation in operational points occurring due to a change in ambient temperature to below ± 0.2 V. Although, in the above embodiments and the associated modifications, the explanation is given by way of the Mach-Zehnder type modulator, the present invention is applicable to other optical waveguide devices such as optical switches, or the like. Also, the present invention can be applied to an optical waveguide device to which a low frequency signal and a high frequency signal are fed independently.

Claims: A method of suppressing DC drift of an optical waveguide device comprising the steps of: forming an optical waveguide (2, 2a, 2b) on a surface of a substrate (1) having an electro-optical effect; forming a pair of electrodes (5, 6) on a corresponding region above the optical waveguide (2, 2a, 2b), which electrodes receive a driving electric signal thereacross; forming a third electrode (10a) on a corresponding region above the substrate (1) so as to be disposed on a region spaced a predetermined distance from the pair of electrodes (5, 6); applying to the said third electrode (10a) a direct current voltage or a low frequency voltage; and generating an electric field in a vicinity of the optical waveguide (2, 2a, 2b) in accordance with the driving electric signal; characterized by forming said third electrode (10a) of a semiconductive layer; and by forming a buffer layer (3) all over the substrate (1) including the optical waveguide (2, 2a, 2b). A method as claimed in claim 1, wherein the step of forming a buffer layer (3) comprises forming a buffer layer (3) of dielectric material having a smaller refractive index than that of the optical waveguide (2). A method as claimed in claim 2, wherein the dielectric material comprises silicon dioxide. A method as claimed in any preceding claim, further comprising the step of forming a second semiconductive layer (4) between the buffer layer (3) on the one hand and the pair of electrodes (5, 6) and the third electrode (10a) on the other and all over the buffer layer (3), wherein the third electrode (10a) has a specific resistance different from that of the second semiconductive layer (4). A method as claimed in claim 4, further comprising the step of forming on a region of the third electrode (10a) a metal electrode (10b), wherein in the step of applying a DC or low frequency voltage to the third electrode (10a) the said voltage is applied thereto through the said metal electrode (10b).

Inventors: DOI MASAHARU, KUBOTA YOSHINOBU, MEKADA NAOYUKI, NAKAZAWA TADAO, SEINO MINORU, DOI, MASAHARU, KUBOTA, YOSHINOBU, MEKADA, NAOYUKI, NAKAZAWA, TADAO, SEINO, MINORU, Doi, Masaharu, c/o Fujitsu Limited, Mekada, Naoyuki, c/o FUJITSU LIMITED, SEINO, MINORU, C/O FUJITSU LIMITED
Applicants: FUJITSU LTD, FUJITSU LIMITED
Application year: 1991
Main classification: G02F1
IPC codes: G02F1