Pin junction photovoltaic element having an i-type semiconductor layer with a plurality of regions having different graded band gaps

Abstract: A pin junction photovoltaic element having an i-type semiconductor layer formed of a band gap variable semiconductor material between a p-type semiconductor layer having a band gap wider than that of said i-type semiconductor layer and an n-type semiconductor layer having a band gap wider than that of said i-type semiconductor layer, characterized in that said i-type semiconductor layer contains a first region which is positioned on the side of said p-type semiconductor layer and has a graded band gap, a second region which is adjacent to said first region and has a graded band gap, and a third region which is positioned on the side of said n-type semiconductor layer and has a graded band gap; said i-type semiconductor layer has a minimum band gap at the boundary between said first region and said second region; the thickness of said first region is less than one second of the thickness of said i-type semiconductor layer; and the gradient of the graded band gap of said third region is larger than that of the band gap of said second region.

Description: PIN JUNCTION PHOTOVOLTAIC ELEMENT HAVING AN i-TYPE SEMICONDUCTOR LAYER WITH A PLURALITY OF REGIONS HAVING DIFFERENT GRADED BAND GAPS BACKGROUND OF THE INVENTION Field of The Invention The present invention relates to an improved pin junction photovoltaic element which exhibits an improved photoelectric conversion efficiency and which can be provided at a reduced cost. More particularly, the present invention relates to an improved pin junction photovoltaic element provided with a specific i-type semiconductor layer with a plurality of regions having different graded band gaps which exhibits an improved photoelectric conversion efficiency and which can be provided at a reduced cost. Related Background Art In recent years, there is an increased societal demand for early realization of a power generation system capable of providing clean energy without causing CO₂ buildup as in the case of thermal power generation. There have been various proposals which are expected to meet such societal demand. Of those proposals, solar cells are expected to be a future power generation source since they supply electric power without causing such problem as above mentioned. Now, there are a number of solar cells which have been put into practical use. Among those solar cells, there is a solar cell made of a single crystal silicon material (which is commonly called "single crystal silicon solar cell"). This single crystal silicon solar cell has been evaluated as being highly reliable and high in photoelectric conversion efficiency. This single crystal silicon solar cell is produced in a manner similar to the semiconductor wafer process of producing an integrated circuit. That is, a single crystal silicon incorporated with a minute amount of a dopant (valence electron controlling agent in other words) of p-type or n-type is firstly prepared by a crystal growth method, a silicon wafer is quarried from the resultant, and a pn junction is formed in the silicon wafer thus obtained by diffusing a different dopant therein. In the single crystal silicon solar cell, light such as sunlight is absorbed, the light absorbed is excited to generate photocarriers, those photocarriers are migrated by the action of internal electric field of the pn junction, whereby a photoelectromotive force is output. However, the single crystal silicon solar cell is costly since it is produced by way of such semiconductor wafer process as above mentioned. In addition to this, there is a disadvantage for the single crystal silicon solar cell that there is a limit for the area of a silicon wafer to be produced because of single crystal and it is therefore extremely difficult to make it to be of a large area. Further in addition, in order for the single crystal silicon solar cell to be a module usable as a power source in outdoors, it is necessary to be provided with a relevant protective equipment. In consequence, the resulting single crystal silicon solar cell module unavoidably becomes such that is relatively costly in comparison with oil fired power generation in terms of production cost of a unit electricity. In any case, in order to make a solar cell to be usable as a daily power source, it is an essential and important subject that a large area solar cell can be industrially massproduced at a reduced cost. This subject is hardly accomplished by the above single crystal silicon solar cell. Thus, various studies have been made on the constituent semiconductor films from various viewpoints such as reproducibility, productivity, production cost, etc. So far there have been proposed various non-single crystal semiconductor films such as tetrahedral non-single crystal semiconductor films of amorphous silicon (a-Si), amorphous silicon germanium (a-SiGe), amorphous silicon carbide (a-SiC), etc., compound semiconductor films containing elements of the groups II and VI of the periodic table such as CdS, CdTe, Cu₂S, ZnSe and ZnTe semiconductor films, and other compound semiconductor films containing elements of the groups I, III and VI of the periodic table. Among these semiconductor films, the tetrahedral non-single crystal semiconductor films (that is, amorphous silicon semiconductor films) are expected to be the most promising in view of their various advantages that a large semiconductor film capable of being the constituent of a solar cell can be relatively easily formed; said semiconductor film can be thinned as desired; said semiconductor film can be formed on an optional substrate; a large area solar cell can be produced on an industrial scale; and thus, it is possible to provide a solar cell at a reasonable cost. Now, as such solar cell, there have been proposed a number of solar cells in which such non-single semiconductor films (amorphous semiconductor films) are used (those solar cells will be hereinafter referred to as non-single crystal solar cells or amorphous solar cells). Those non-single crystal solar cells which are presently known are typically of pin junction type, MIS type (comprising metal layer/insulating layer/semiconductor layer) and heterojunction type. Of these, solar cells of pin junction type (hereinafter referred to as "pin junction solar cell" or "pin junction photovoltaic element") are the most spotlighted. The pin junction solar cell is typically of the constitution that comprises an electrode, a metallic layer and a photoelectromotive force generating layer, and another electrode being disposed in this order on a substrate, in which said photoelectromotive force generating layer comprises a multilayered body comprising an n-type semiconductor layer, an i-type semiconductor layer and a p-type semiconductor layer. There is, however, a disadvantage for such non-single crystal solar cell that its photoelectric conversion efficiency is inferior to that of the foregoing single crystal solar cell. In view of this, various studies have been made in order to improve the photoelectric conversion efficiency of such non-single crystal solar cell. Particularly, as for an amorphous silicon (a-Si) which is the most widely used at the present time as an amorphous semiconductor, its energy band width is about 1.7 or more, and because of this, light of 750 nm or more in wavelength is hardly absorbed by the amorphous silicon. Therefore, long wavelength energy components of sunlight spectra are not efficiently utilized in the case of an amorphous silicon solar cell. In order to eliminate this problem, studies have been made on other silicon-containing amorphous materials comprising a-Si incorporated with appropriate atoms such as germanium atoms (Ge), tin atoms (Sn) or lead atoms (Pb) which have a band gap narrower than that of the a-Si (amorphous silicon). As for these silicon-containing amorphous materials, there is an advantage that their band gap can be properly adjusted by controlling the amount of such atoms to be incorporated thereinto. There has been proposed a pin junction solar cell (which is a so-called single cell type pin junction solar cell) in which such narrow band gap silicon-containing amorphous material is used as the i-type semiconductor layer. Further, there has been proposed a multicells-stacked solar cell comprising a pin junction solar cell element having an i-type semiconductor layer formed of such narrow band gap silicon-containing amorphous material and other pin junction solar cell element having an i-type semiconductor layer formed of a-Si being stacked. It is generally believed that the latter multicells-stacked solar cell provides a photoelectric conversion efficiency greater than that provided by the former single cell type solar cell. However, there are disadvantages for the foregoing silicon-containing amorphous materials such that they are inferior to the a-Si in terms of combined states of atoms; films of them are liable to be easily deteriorated in comparison with the a-Si; and they are also inferior to the a-Si in terms of the product µτ of an electron and a hole (that is, the product of a carrier's mobility and a carrier's mean life time in other words). Now, U.S. Patent No. 4,816,082 (hereinafter referred to as "Literature 1") proposes a pin junction solar cell having an i-type semiconductor layer comprising an amorphous alloy in which the band gap of the i-type semiconductor layer is graded such that the band gap of each of the regions in contact with the p-type semiconductor layer and the n-type semiconductor layer is widened and it is minimum at a given region. This proposed pin junction solar cell aims at providing an improved photoelectric conversion efficiency by varying the band gap of the i-type semiconductor layer depending on the position thereof in the thickness direction. Other than the above proposal, U.S. Patent No. 4,542,256 (hereinafter referred to as "Literature 2") proposes a pin junction photovoltaic cell (namely, pin junction solar cell) which is aimed at providing an improved photoelectric conversion efficiency by forming the n-type semiconductor layer or the p-type semiconductor layer of a material having a band gap wider than that of the constituent material of the i-type semiconductor layer and disposing a layer (that is a so-called intermediate layer) having a continuously graded band gap not only at the interface between the p-type semiconductor layer and the i-type semiconductor layer but also at the interface between the n-type semiconductor layer and the i-type semiconductor layer. However, any of these proposals are not sufficient enough in terms of providing a photoelectric conversion efficiency in a pin junction solar cell. SUMMARY OF THE INVENTION The principal object of the present invention is to provide an improved photovoltaic element which exhibits an fill factor higher than that in the case of the known photovoltaic element and provides a satisfactory photoelectric conversion efficiency. The above object of the invention is obtained by a photovoltaic element according to claim 1. The pin junction photovoltaic element of the present invention is clearly distinguished from the photovoltaic element disclosed in Literature 1. That is, in the pin junction photovoltaic element disclosed in Literature 1, the gradient of the band gap between its minimum point and its maximum point in the i-type semiconductor layer is of a linear state, that is, uniform in other words. On the other hand, in the photovoltaic element of the present invention, the band gap in the i-type semiconductor layer is made such that it is gradually graded from the center towards the p-type semiconductor layer to become minimum at a given position on the side of the p-type semiconductor layer; it is maximum at the interface with the n-type semiconductor layer and also at the interface with the p-type semiconductor layer; and the gradient of the band gap extending from the minimum point to the maximum point is relatively gentle in the region on the side of the minimum point but relatively steep in the region on the side of n-type semiconductor layer. The pin junction photovoltaic element of the present invention is of such unique bad gap constitution. Because of this, the pin junction photovoltaic element provides an improved photoelectric conversion efficiency which can not be attained by the photovoltaic element of Literature 1. In the case of a pin junction photovoltaic element (that is, pin junction solar cell), it is generally considered that the internal electric field of the i-type semiconductor layer which is provided by the pin junction is intensive at the interface with the p-type semiconductor layer and at the interface with the n-type semiconductor layer and it is weak in the inside of the i-type semiconductor layer. It is also considered that in any case where light is impinged from the side of the p-type semiconductor layer or from the side of the n-type semiconductor layer, the electric field is the most weakened in a region of the i-type semiconductor layer situated near the n-type semiconductor layer. This situation is apparent with reference to the report by D. E. Carlson under the title "Light-induced effect in amorphous silicon material and devices" in Solar Cells, vol. 9, pp. 19-20 (1983) and also the report by M. Hack et al in J. Appl. Phys. vol. 58, pp. after 997 (1985). The present inventors made various studies of the properties of the pin junction solar cell as above described. As a result, the following knowledges were obtained. That is, (i) it is possible to promote the transportation of minority carrier by enlarging the gradient of the band gap of the region of the i-type semiconductor layer where the internal electric field is the most weakened, that is, the region of the i-type semiconductor layer which is situated near the n-type semiconductor later either in a pin junction solar cell of the type that light is impinged from the side of the p-type semiconductor layer or in a pin junction solar cell of the type that light is impinged from the side of the n-type semiconductor layer; (ii) it is possible to enlarge the gradient of the end portion of a valence electron band extending from near the point where the internal electric field is the most weakened towards the n-type semiconductor layer by relatively enlarging the gradient of the region (wherein minority carrier becomes to be a hole) of the i-type semiconductor layer near the interface with the n-type semiconductor layer and relatively minimizing the gradient of the region situated in the inside of the i-type semiconductor layer (near the minimum point of the band gap); and in combination of the said (i) and (ii), the transportation of a hole can be promoted. The present inventors obtained a further knowledge that in the case of a pin junction solar cell, when the minimum point of the band gap in the i-type semiconductor layer is situated at a position closer to the p-type semiconductor layer from the center thereof, light absorption in the neighborhood at the interface with the p-type semiconductor layer is improved to increase generation of photocarrier and shorten the transportation distance of hole generated and because of his, the efficiency of collecting photocarriers is improved. The present invention has been accomplished as a result of further studies by the present inventors on the basis of the above knowledges. According to the technique disclosed in Literature 1, it is possible to more improve the open circuit voltage (Voc) and the fill factor (F.F.) of a pin junction solar cell in comparison with the case of a pin junction photovoltaic element (that is, pin junction solar cell) of Literature 2 which has an i-type semiconductor layer not having a graded band gap. However, in the case of the pin junction photovoltaic element of the present invention, because the mean value of the hand gaps of the i-type semiconductor layer is smaller than that in the pin junction solar cell which is linear in the gradient of the band gap in the i-type semiconductor layer, absorption of long wavelength is more improved to cause an increase in the short circuit current (Isc). Further in the case of the pin junction photovoltaic element of the present invention, it is possible to thin the thickness of a semiconductor film required to provide a short circuit current equivalent to the short circuit current obtained in the pin junction solar cell of Literature 1 in which the gradient of the band gap in the i-type semiconductor layer is of a linear state, and because of this, the fill factor of the pin junction photovoltaic element of the present invention is improved. The fill factor herein means a value obtained by dividing the maximum power which can be outputted under predetermined light impinged by the product of the open circuit voltage and the short circuit current at that time, and it is believed that the more the value is close to 100%, the better the solar cell. As above described, the photovoltaic element of the present invention excels in the short circuit current and in the fill factor and provides an improved photoelectric conversion efficiency. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic cross section view illustrating the constitution of a typical pin junction photovoltaic element of the present invention. FIG. 2 is a schematic diagram illustrating the profile of an energy band in a pin junction photovoltaic element of the present invention. FIG. 3 is a schematic diagram illustrating the profile of an energy band in another pin junction photovoltaic element of the present invention. FIG. 4 is a schematic diagram illustrating the profile of an energy band in a further pin junction photovoltaic element of the present invention. FIG. 5 is a schematic diagram illustrating the profile of an energy band in a still further pin junction photovoltaic element of the present invention. FIG. 6 is a schematic cross section view illustrating the constitution of another pin junction photovoltaic element of the present invention. FIG. 7 is a schematic explanatory view illustrating the constitution of an film-forming apparatus to be used for the preparation of a pin junction photovoltaic element of the present invention. FIG. 8 is a schematic diagram illustrating the film-forming conditions employed in Example 1 of the present invention which will be later described. FIG. 9 is a schematic diagram illustrating the profile of an energy band in the pin junction photovoltaic element obtained in said Example 1. FIG. 10 is a schematic diagram illustrating the film-forming conditions employed in Example 2 of the present invention which will be later described. FIG. 11 is a schematic diagram illustrating the profile of an energy band in the pin junction photovoltaic element obtained in said Example 2. FIG. 12 is a schematic diagram illustrating the film-forming conditions employed in Example 3 of the present invention which will be later described. FIG. 13 is a schematic diagram illustrating the profile of an energy band in the pin junction photovoltaic element obtained in said Example 3. FIG. 14 is a schematic cross section view illustrating the constitution of the pin junction photovoltaic element obtained in Example 4 of the present invention which will be later described. FIG. 15 is a schematic cross section view illustrating the constitution of the pin junction photovoltaic element obtained in Example 5 of the present invention which will be later described. FIG. 16 is a schematic diagram illustrating the profile of an energy band in a known pin junction photovoltaic element. FIG. 17 is a schematic diagram illustrating the profile of an energy band in other known pin junction photovoltaic element. FIG. 18 shows graphs with respect to current/voltage characteristics of the specimens obtained in Examples 1 and 2 of the present invention and Comparative Example 2 which will be later described. FIG. 19 shows graphs with respect to further current/voltage characteristics of the specimens obtained in Examples 1 and 2 of the present invention and Comparative Example 2 which will be later described. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be detailed in the following. FIG. 1 is a schematic cross section view illustrating the constitution of a pin junction solar cell as an example of the pin junction photovoltaic element of the present invention. The pin junction solar cell shown in FIG. l comprises a lower electrode 102, an n-type semiconductor layer 103, an i-type semiconductor layer 104, and a transparent electrode 106 being laminated in this order on a substrate 101. Reference numeral 106 stands for a collecting electrode disposed on the transparent electrode 106. This pin junction solar cell is of the type that light is impinged from the side of the p-type semiconductor layer 105. Each of the lower electrode 102 and the transparent electrode 106 serves as a means to output a photocurrent from the pin junction structure. In the pin junction solar cell shown in FIG. 1, the lower electrode 102 is connected to the n-type semiconductor layer 103 through an ohmic contact, and likewise, the transparent electrode 106 is contacted to the p-type semiconductor layer 105 through an ohmic contact. In the following, explanation will be made of each of the constituents of the pin junction solar cell provided according to the present invention. Substrate The substrate 101 may be electroconductive or electrically insulating, and it may be transparent or opaque. The electroconductive substrate can include, for example, metals such as Al, Fe, Cu, Ni, and Ag and alloys of these metals such as stainless steel. In the case where the substrate 101 comprises an electroconductive member selected from the group consisting the above metals and alloys, the substrate may serve also as the lower electrode 102. In this case, the substrate may also serve as a current-outputting electrode (not shown in the figure). The electrically insulating substrate can include, for example, films or sheets of inorganic materials such as no-alkali glass, SiO₂, Si₃N₄, Al₂O₃ and the like or synthetic resins such as polyimide, polyamide, polyester, polyethylene, polyethylene terephthalate, cellulose acetate, polypropylene, polyvinyl chloride, polystylene, epoxy resin and the like. The electrocondutive substrate may comprise a member made of such metal or alloy as above mentioned which has a coat comprising any of the foregoing synthetic resins on the rear face thereof. In the case where the substrate 101 comprises such electrically insulating film or sheet as above mentioned, it is desired to form an electroconductive thin film of an electroconductive material such as a metal e.g. Al, Ag, Pt, Au, Ni, Ti, Mo, W, Fe, V, Cr or Cu, an alloy e.g. stainless steel, brass, or nichrome, or a transparent and conductive oxide (TCO) material e.g. SnO₂, In₂O₃, or ITO (In₂O₃ + SnO₂) on the surface of the electrically insulating substrate on which a deposited film (the lower electrode 102 or a semiconductor layer) is to be disposed by a metal plating process, a vacuum deposition process process or a sputtering process. In this case, the electroconductive film formed on the surface of the electrically insulating may function as the foregoing current outputting electrode. The substrate 101, even if it is composed of an electroconductive material, may be provided with a metallic layer comprising a metal different from the constituent metal of the substrate on the surface thereof on which a deposited film is to be formed in order to improve the reflection coefficient of long wavelength at the surface of the substrate and also in order to prevent occurrence of mutual diffusion of the constituent materials between the substrate 101 and the deposited film formed on the surface thereof. In the case of the pin junction solar cell that is of the type in which light is impinged from the side of the substrate, it is desired that the substrate is constituted by a relatively transparent and conductive material, and a thin film of a transparent and conductive oxide or a metal having a thickness capable of allowing smooth light transmission therethrough is formed on the surface thereof. The pin junction solar cell of the type in which light is impinged from the side of the substrate will be later detailed. It is possible for the surface of the substrate to be flat surface or uneven wherein the surface is provided with minute irregularities. In the case where the substrate is such that has a surface provided with minute irregularities, the irregularity may be of spherical, conical, or pyramid shape in which the maximum height is preferably 50 nm to 500 nm. There is an advantage in this case that light is irregularly reflected at the uneven surface of the substrate to increase the optical path length of the light thus reflected. Electrodes In the pin junction solar cell of the present invention, appropriate electrodes are used in accordance with the configuration of the pin junction solar cell to be obtained. As such electrodes, there can be mentioned the lower electrode, transparent electrode (upper electrode) and collecting electrode. The upper electrode denotes the one to be placed on the side through which light is impinged, and the lower electrode denotes the one to be placed opposite to the upper electrode through the semiconductor layers being arranged between the two electrodes. These electrodes will be explained in the following. Lower electrode The lower electrode 102 is disposed between the substrate 101 and the n-type semiconductor layer 103 as above described. In the case where the substrate 101 is electroconductive, the substrate can function also as the lower electrode 102. However, in the case where the substrate is electroconductive but is of a high sheet resistance, the lower electrode 102 may be disposed as a lower resistance electrode serving to output a current or in order to heighten the reflectivity of the incident light at the surface of the substrate so as to make it utilized more efficiently. In the case where the substrate 101 comprises an electrically insulating member, it is essential to dispose the lower electrode 102 serving to output a current, and the lower electrode is placed between the electrically insulating substrate 101 and the corresponding semiconductor layer. The lower electrode 102 may comprised of a thin film of a member selected from the group consisting of Ag, Au, Pt, Ni, Cr, Cu, Al, Ti, Zn, Mo, W and alloys of these metals. The thin film may be properly formed by way of the known vacuum deposition technique, electron-beam heating deposition technique or sputtering technique. However, due care should be made so that the metallic thin film thus formed is not a resistive component for the pin junction solar cell. In view of this, the metallic thin film consisting the lower electrode 102 should be of a sheet resistance preferably of 50 Ω or less, more preferably of 10 Ω or less. Alternatively, it is possible to dispose a diffusion preventive layer composed of an electroconductive material such as zinc oxide between the lower electrode 102 and the n-type semiconductor layer 103. (This is not shown in the figure). In the case where such diffusion preventive layer is employed in this way, there are provided advantages that it prevents the metal elements constituting the lower electrode 102 from diffusing into the n-type semiconductor layer; it serves to cause multiple interference effects with the thin film and confine the light impinged within the semiconductor layer; and being provided with a certain resistant value, it prevents occurrence of short circuit, which would otherwise occur between the lower electrode 102 and the transparent electrode 106 through the semiconductor layers arranged between them due to pinholes and the like. Transparent electrode (upper electrode) The transparent electrode 106 is desired to have a light transmittance of more than 85% so that it serves to make the semiconductor layer efficiently absorb sunlight or fluorescent light. In addition to this, it is desired to have a sheet resistance of 100Ω or less from the viewpoint of preventing the internal resistance of the pin junction solar cell from becoming great thereby impairing the performance. In view of the above, the transparent electrode 106 is desired to comprise a thin film of a metal oxide selected from the group consisting of SnO₂, In₂O₃, ZnO, CdO, Cd₂SnO₄, and ITO (In₂O₃ + SnO₂) or a semitransparent thin film of a metal selected from the group consisting of Au, Al and Cu. The transparent electrode 106 is disposed on the p-type semiconductor layer 105. Therefore, it is necessary to constitute the transparent electrode 106 with a thin film member selected from the foregoing which is good in adhesion at least with the p-type semiconductor layer 105. The transparent electrode 106 comprising such thin film may be properly formed by way of the known resistance heating deposition technique, electron beam heating deposition technique, sputtering technique or spraying technique. Collecting electrode The collecting electrode 107 is disposed on the transparent electrode 106 for the purpose of reducing the surface resistance of the transparent electrode. The collecting electrode 107 is desired to comprise a thin film of a member selected from the group consisting of Ag, Cr, Ni, Al, Au, Ti, Pt, Cu, Mo and alloys of these metals. It is possible for the collecting electrode to be constituted by a member comprising a plurality of such metallic thin films being laminated. The shape and the area of the collecting electrode 107 should be properly designed so that a sufficient quantity of light can be received by the semiconductor layer. Specifically as for the shape, it is desired to be such that it extends uniformly all over the light receiving face of the pin junction solar cell. As for the area, it is desired to be made such that it covers 15% or less of said light receiving face in a preferred embodiment or 10% or less in a more preferred embodiment. The member constituting the collecting electrode 107 is of a sheet resistance preferably of 50Ω or less or more preferably of 10Ω or less. In the following, explanation will be made of each of the constituent semiconductor layers. i-type semiconductor layer The i-type semiconductor layer 104 is constituted by a a material capable of being adjusted for the band gap. Specific examples of such material can include silicon-containing amorphous materials such as a-Si, a-SiGe, a-SiSn, a-SiPb, etc., microcrystal Si, polycrystal Si, compounds containing an element belonging to the group II and an element belonging to the group VI of the periodic table (hereinafter referred to as "group II-VI compound") such as CdS, CdTe, etc., and compounds containing an element belonging to the group III and an element belonging to the group V of the periodic table (hereinafter referred to as "group III-V compound") such as GaAs, InSb, etc. The thickness of the i-type semiconductor layer largely differs depending upon the kind of a material by which the layer is constituted. However, for instance, when it is constituted by a-Si, the thickness is desired to be 50 to 800 nm. Likewise, when it is constituted by other silicon-containing amorphous material such as a-SiGe, the thickness is desired to be 100 to 500 nm. Explanation will be made of the band gap in the i-type semiconductor layer 104. The band gap in the i-type semiconductor layer 104 is made such that it grades depending upon given positions in the thickness direction and becomes minimum at a given point in the thickness direction (this point will be hereinafter simply called "minimum point"). Particularly, the band gap becomes gradually widened as the distance from the minimum point to the interface between the i-type semiconductor layer 104 and the n-type semiconductor layer 103 becomes shortened. And the i-type semiconductor layer 104 is desired to be smoothly joined with the n-type semiconductor layer 103 such that the band gap is not discontinued at the composition face between the two layers. The band gap extending from the minimum point towards the n-type semiconductor layer is made such that its gradient is relatively gentle in the region situated on the side of the minimum point and is relatively steep in the region situated on the side of the n-type semiconductor layer 103. In relation with the p-type semiconductor layer 105, the band gap becomes gradually widened as the distance from the minimum point to the interface between the i-type semiconductor layer 104 and the p-type semiconductor layer 105 becomes shortened. And the i-type semiconductor layer 104 is desired to be smoothly joined with the p-type semiconductor layer 105 such that the band gap is not discontinued at the composition face between the two layers. The optimum position of the minimum point in the i-type semiconductor layer is somewhat different depending upon the kind of a material used and the constitution of the pin junction solar cell, but in general, it is desired to be designed such that it is situated in the region near the p-type semiconductor layer in terms of the thickness direction of the i-type semiconductor layer 104. In a preferred embodiment, the minimum point is designed to be situated in the region between the interface with the p-type semiconductor layer 105 and the position corresponding to one third of the entire thickness of the i-type semiconductor layer 104 which is distant from said interface in the thickness direction of the i-type semiconductor layer 104. In a more preferred embodiment, the minimum point is designed to be situated in the region between the interface with the p-type semiconductor layer 105 and the position corresponding to one fourth of the entire thickness of the i-type semiconductor layer 104 which is distant from said interface in the thickness direction of the i-type semiconductor layer 104. More detailed explanation will be made of the shape of the band gap in the i-type semiconductor layer with reference to the drawings. FIG. 2 is a schematic diagram illustrating the profile of an energy band of the semiconductor layer of a pin junction solar cell as an example of the pin junction photovoltaic element according to the present invention. In the figure, CB denotes an edge of conduction band and VB denotes an edge of valence electron band. Suppose light is impinged from the side of the p-type semiconductor layer. As apparent from what shown in FIG. 2, by minimizing the thickness of a region I AB to less than 1/2 of the thickness of the i-type semiconductor layer, the band gap is made minimum (that is, minimum point) at the position (position B) which is situated near the p-type semiconductor layer in the region of the i-type semiconductor layer between the center of the i-type semiconductor layer and the interface A with the p-type semiconductor layer. The characteristics of the i-type semiconductor layer containing the region I AB , a region I BC and a region I CD are adjusted so that the band gap is maximum at the interface A between the i-type semiconductor layer and the p-type semiconductor layer and at the interface D between the i-type semiconductor layer and the n-type semiconductor layer and in addition, the gradient of the band gap between the minimum point B and the maximum point D on the side of the n-type semiconductor layer is relatively gentle in the region I BC near the minimum point B and relatively steep in the region I CD near the point D. In the case of FIG. 2, the bad gap is linearly graded in the region I BC , the gradient thereof is then changed at the point C, and it is again linearly graded in the region I CD , wherein the gradient of the band gap in the region I BC is smaller than that in the region I CD . Alternatively, it is possible that the region between the minimum point of the band gap and the interface with the n-type semiconductor layer is divided into three regions and the gradient of the band gap is made different in each of these three regions. In this case, there are established two turning points with respect to the gradient of the band gap, wherein the gradient of the band gap is step-wise widened from the minimum point towards the interface with the n-type semiconductor layer. FIG. 3 is a schematic diagram illustrating the profile of an energy band of the semiconductor layer of a pin junction solar cell as another example of the pin junction photovoltaic element according to the present invention in which the i-type semiconductor region situated between the minimum point B of the band gap and the interface E with the n-type semiconductor layer is divided into three regions I BC , I CD and I DE . In the case of FIG. 3, the gradient of the band gap in the region I CD is wider than that in the region I BC , and the gradient of the band gap in the region I DE is wider than that in the region I CD . In this case, the thickness of the region I DE is desired to be preferably 51 nm or more, more preferably 55 nm or more. In the following, explanation will be made of a pin junction solar cell as a further example of the pin junction photovoltaic element according to the present invention which is of the constitution in which the i-type semiconductor layer region situated between the minimum point of the band gap and the interface with the n-type semiconductor layer is divided into mathematically infinite regions and the gradient of the band gap in each of the regions is changed. FIG. 4 is a schematic diagram illustrating the profile of an energy band of the semiconductor layer of a pin junction solar cell as a further example of the pin junction photovoltaic element according to the present invention in which the band gap is gradually graded from the minimum point B towards the interface D with the n-type semiconductor layer without being bent back in the course of grading. FIG. 5 is a schematic diagram of illustrating the profile of an energy band of the semiconductor layer of a pin junction solar cell having an intermediate layer as a still further example of the pin junction photovoltaic element according to the present invention. In the case of the pin junction solar cell shown in FIG. 1, there will be such an occasion that the band gap becomes discontinuous at the interface between the i-type semiconductor layer 104 and the n-type semiconductor layer 103 or at the interface the i-type semiconductor layer 104 and the p-type semiconductor layer 104 depending upon the kind of a constituent material used for the formation of each of said semiconductor layers. In order to prevent such problem, it is effective to dispose an appropriate layer capable of permitting the band gap to continuously transit therein (that is, an intermediate layer) at the interface portion of the i-type semiconductor layer 104 as shown in FIG. 5. As a preferable example of the case where it is effective to dispose such intermediate layer, there can be illustrated a pin junction solar cell in which the i-type semiconductor layer 104 is formed of a-SiGe and the p-type semiconductor layer 105 is formed of a-SiC. In FIG. 5, each of the two hatched regions B AE and B FD corresponds to the intermediate layer. In the case where a layer capable of permitting the band gap to continuously transit therein (that is, the intermediate layer) is disposed at the interface portion between the i-type semiconductor layer 104 and the n-type semiconductor layer 103 in the way as above mentioned, one would think that this cannot be distinguished from the region I DE of the i-type semiconductor layer shown in FIG. 3. However, the intermediate layer B FD is disposed with a thickness of 50 nm or less from the interface with the n-type semiconductor layer 103. When the band gap of the i-type semiconductor layer is different from that of the n-type semiconductor layer, there occurs an increase in recombination of photocarriers because of the presence of a high density of interface states at the interface between the two semiconductor layers. However, occurrence of this problem can be prevented by disposing the intermediate layer, whereby the open circuit voltage (Voc) is improved. The internal electric field of the interface is relatively large since the intermediate layer is situated at the interface portion. Being different from the case where the intermediate layer is disposed, the gradient of the band gap of the region I DE of the i-type semiconductor layer situated on the side of the n-type semiconductor layer is continuously extended into the inside of the i-type semiconductor layer in the present invention. Hence, in the present invention, the gradient of the band gap of the region I DE on the side of the n-type semiconductor layer is situated at the portion in the i-type semiconductor layer where the internal electric field is relatively weak and because of this, said gradient contributes to promoting the transportation of a minority carrier to thereby improve the fill factor (F.F.). In the present invention, the value of the gradient of the band gap for each of the regions of the i-type semiconductor layer differs depending upon the kind of a material used and also depending upon the entire thickness of the i-type semiconductor layer. However, in the case of using a-SiGe, the gradient of the band gap of, for example, the region I BC of the i-type semiconductor layer on the side near the minimum point of the band gap of the i-type semiconductor layer is desired to be preferably 0.1 to 0.5 eV/µm, more preferably 0.2 to 2 eV/µm, and the gradient of the band gap of, for example, the region I CD , I CF or I DE of the i-type semiconductor layer on the side near the n-type layer is desired to be preferably 0.5 to 60 eV/µm, more preferably 1.0 to 12 eV/µm. In the present invention, the method of grading the band gap of the i-type semiconductor layer is different depending upon the kind of a material of which the i-type semiconductor layer is formed. However, in the case where the i-type semiconductor layer is constituted by a material containing two or more kinds of elements, the band gap can be graded by changing the elemental composition ratio. For example, it is known that in the case where the composition ratio of Si/Ge as for a-SiGe which is suitable for a solar cell, its band gap can be substantially linearly changed depending upon a change in the elemental composition ratio of Si/Ge. Thus, in the case where a material containing two or more kinds of element is used to form the i-type semiconductor layer, the bad gap thereof can be properly graded by continuously changing the elemental composition ratio thereof in the thickness direction in accordance with the above known method. Other than the above, as for a certain material by which the i-type semiconductor layer is constituted, its band gap can be properly graded by changing the hydrogen content or the size of crystal grains as desired. n-type semiconductor layer and p-type semiconductor layer The n-type semiconductor layer 103 may be constituted by any of the foregoing materials usable for the formation of the i-type semiconductor layer 104. Alternatively, the n-type semiconductor layer 103 may be constituted also by other appropriate material having a band gap wider than that of a-Si such as a-SiC, a-SiN, a-SiO or the like. In any case, these materials are made to be of n-type by doping them with an appropriate dopant such as P, As, Sb, N, etc. upon forming the n-type semiconductor layer. The p-type semiconductor layer 105 may be constituted by any of the materials usable for the formation of the n-type semiconductor layer 103. As well as in the case of forming the n-type semiconductor layer 103, any of those materials is made to be of p-type by doping it with an appropriate dopant such as B, Al, Ga, In, etc. upon forming the p-type semiconductor layer. Any of the n-type semiconductor layer 103 and the p-type semiconductor layer 105 is desired to be such that is low in resistance, small in activation energy and little in defect. In the case where the p-type semiconductor layer 105 or the n-type semiconductor layer 103 is positioned on the side through which light is impinged, it is desired for the semiconductor layer positioned on the side through which light is impinged to be designed to have a wider band gap and to be thin in thickness so that light transmission is heightened. As for the thickness of each of the n-type semiconductor layer 103 and the p-type semiconductor layer 105, the optimum value thereof largely differs depending upon the kind of a material to be used for the formation of each of them. However, in the case where each of the n-type semiconductor layer 103 and the p-type semiconductor layer 105 is constituted by a-Si, a-SiC, a-SiN or a-SiO, the thickness of each of them is desired to be in the range of from 3 to 50 nm. As above described, the foregoing pin junction solar cell having the configuration shown in FIG. 1 is of the type in which light is impinged from the side opposite the substrate 101. This configuration can be changed to such that light is impinged from the side of the substrate. FIG. 6 is a schematic cross section view illustrating the configuration of a pin junction solar cell of the type in which light is impinged from the side of the substrate. The pin junction solar cell shown in FIG. 6 comprises a transparent electrode 116, an n-type semiconductor layer ll3, an i-type semiconductor layer 114, an n-type semiconductor layer 115, and a lower electrode 112 being laminated in this order on a light transmissive substrate 111. Each of the transparent electrode 116, the n-type semiconductor layer 113, the i-type semiconductor layer 114, the n-type semiconductor layer 115, and the lower electrode 112 is formed in the same manner as above described of the pin junction solar cell shown in FIG. 1. The substrate 111 in the pin junction solar cell shown in FIG. 6 is desired to have been applied with an electroconductive oxide thin film or a metallic thin film of a thickness capable of permitting light to transmit therethrough to the surface thereof. As the transparent electrode 116 is positioned between the substrate lll and the n-type semiconductor layer 113, the transparent electrode is desired to be constituted by a material having a good adhesion not only with the substrate 111 but also with the n-type semiconductor layer 113. The pin junction solar cell of the present invention may be a pin junction multicells-stacked solar cell comprising a plurality of pin junction photovoltaic elements respectively, for example, of the same constitution as the pin junction element of the pin junction solar cell shown in FIG. 1 being stacked. In any case, upon putting any of the above mentioned pin junction solar cells into practical use as a power source, it is used in the form of a solar cell module. Such solar cell module is prepared in a manner that a plurality of such solar cell units are electrically connected either in series or in parallel to thereby integrate them, whereby obtaining an integrated body, a layer capable of protecting the surface thereof is mounted to the integrated body, and outputting terminals are provided to the resultant. The present invention will be described more specifically while referring to Examples, but the present invention is not intended to limit the scope only to these examples. Example 1 There was prepared a pin junction solar cell of the configuration shown in FIG. 1 in which the i-type semiconductor layer 104 comprises a-SiGe, using the film-forming apparatus shown in FIG. 7. Firstly, explanation will be made of the film-forming apparatus shown in FIG. 7. This film-forming apparatus serves to form a deposited film on a substrate by means of a high frequency plasma CVD process, and it is of the known constitution. In the figure, reference numeral 201 stands for a deposition chamber provided with a gas feed pipe 208 serving to introduce a film-forming raw material gas into said deposition chamber and an exhaust pipe 206 connected through an exhaust valve (not shown) to a vacuum pump 207. In the deposition chamber 201, there are installed a substrate holder 204 and a high frequency electrode 204 to be opposite to said substrate holder. The substrate holder 204 is constituted by a conductive material, and it is electrically grounded. Reference numeral 101 stand for a substrate placed on the surface of the substrate holder 204. Reference numeral 205 stands for an electric heater installed in the substrate holder 204. The electric heater 205 serves to heat the substrate 101. The high frequency electrode 203 is electrically connected through a matching box (not shown) to a high frequency power source 202 which is electrically grounded. The other end of the gas feed pipe 208 is connected to raw material gas reservoirs (not shown) through branch pipes 209 provided with excit valves 210, mass flow controllers 212 and main valves 211 for the reservoirs. An appropriate raw material gas is reserved in each of the reservoirs. The raw material gas from each of the reservoirs is introduced into the deposition chamber 201 through the main valve 211, the mass flow controller 212, the excit valve 210 and the gas feed pipe 208 while its flow rate being controlled. The flow rate of each of the film-forming raw material gases to be thus introduced into the deposition chamber 201 upon film formation can be properly changed as desired by controlling the corresponding mass flow controller. Each of the mass flow controllers 211 is designed such that it can be properly controlled by a microcomputer (not shown). Thus, a desired flow rate pattern can be attained by programing said microcomputer. Film formation in this film-forming apparatus is performed, for example, in such a manner that the inside of the deposition chamber 201 is evacuated to a predetermined vacuum degree by the action of the vacuum pump 207, one or more kinds of film-forming raw material gases are introduced thereinto through the gas feed pipe 208 while controlling their flow rates as desired, simultaneously the high frequency power source 202 is switched on to apply a predetermined high frequency power to the high frequency electrode 203 to thereby cause glow discharge, whereby forming a deposited film on the surface of the substrate 101 being maintained at a desired temperature. Film formation using the film-forming apparatus shown in FIG. 7 in this example was performed as follows. As the substrate 101, there was provided a SUS 304 stainless steel plate of 5 cm x 5 cm in size having a mirror ground uneven surface of 0.05 µm in Rmax. On the surface of this substrate 101 were successively formed a 100 nm thick Ag film and a 400 nm thick ZnO film to be the lower electrode 102 by a conventional high frequency sputtering method. At the time of forming said Ag thin film, the substrate was maintained at about 300 °C in order to make the surface of said Ag film to be uneven (to be textured in other words). The substrate having the lower electrode 102 formed thereon was placed on the surface of the substrate holder 204 of the film-forming apparatus shown in FIG. 7. Then, the inside of the deposition chamber 201 was evacuated by actuating the vacuum pump 207 to bring it to a vacuum degree of about 1.3 · 10⁻⁴ Pa (1 x 10⁻⁶ Torr). The vacuum degree in this case was observed by an ion gage (not shown). The heater 205 was actuated to heat the substrate 101 to about 300 °C. After the temperature of the substrate 101 became constant at this temperature, the main valve 211 and the exit valve 210 were operated to introduce Si₂H₆ gas into the deposition chamber 201 at a flow rate of 1 sccm while controlling its flow rate by means of the mass flow controller 212. Likewise, H₂ gas and PH₃/H₂ gas (diluted to 5%) were introduced into the deposition chamber 201 at respective flow rates of 50 sccm and 1 sccm. The gas pressure in the deposition chamber 201 was adjusted to and maintained at 1.6 hPa (1.2 Torr). Then, the high frequency power source 202 was switched on to apply a high frequency power of 1.5 W to the high frequency electrode 203, to thereby cause glow discharge in the deposition chamber. This film forming procedure was continued for 2 minutes. As a result, an about 20 nm thick n-type a-Si:H film to be the n-type semiconductor layer 103 on the lower electrode 102. The application of the high frequency power and the introduction of the gases were suspended. The inside of the deposition chamber 201 was evacuated to a vacuum degree of about 1.3 · 10⁻⁴ Pa (1 x 10⁻⁶ Torr). Then film formation was performed in the same manner as in the case of forming the n-type semiconductor layer 103 under the following conditions. raw material gases used & their flow rates: Si₂H₆ gas : 0.65 sccm H₂ gas : 50 sccm GeH₄ gas : the flow rate was changed following the flow rate pattern shown in FIG. 8 while controlling the corresponding mass flow controller by a microcomputer the gas pressure in the deposition chamber: 1.53 hPa (1.15 Torr) high frequency power applied: 1.3 W film formation period of time: 25 minutes As a result, there was formed a non-doped a-SiGe:H film to be the i-type semiconductor layer 104 on the previously formed n-type semiconductor layer. As apparent from the measured results which will be later described, the resultant non-doped a-SiGe:H film was found to have such band gap graded in the thickness direction as shown in FIG. 9. After the formation of the i-type semiconductor layer completed, the application of the high frequency power and the introduction of the gases were suspended. The inside of the deposition chamber 201 was evacuated to a vacuum degree of about 1.3 · 10⁻⁴ Pa (1 x 10⁻⁶ Torr). Then the p-type semiconductor layer 105 was formed in the same manner as in the case of forming the n-type semiconductor layer 103 under the following conditions. raw material gases used & their flow rates: SiH₄/H₂ gas (diluted to 5%) : 1 sccm H₂ gas : 75 sccm BF₃/H₂ gas (diluted to 2%) : 1 sccm the gas pressure in the deposition chamber: 1.46 hPa (1.1 Torr) high frequency power applied: 50 W film formation period of time: 0.5 minutes As a result, there was formed a 6 nm thick p-type microcrystal Si:H film to be the p-type semiconductor layer 105 on the previously formed i-type semiconductor layer 104. After the formation of the p-type semiconductor layer 105 completed, the application of the high frequency power and the introduction of the gases were terminated. The resultant was cooled, and it was transferred into a conventional vacuum deposition apparatus, wherein on the previously formed p-type semiconductor layer was formed a 70 nm thick ITO film to be the transparent electrode 106. Thus, there was obtained a pin junction solar cell element sample. The sample thus obtained was cut into a plurality of specimens respectively of 1 cm x 1 cm in size. On each of the specimens was formed an aluminum thin film to be the collecting electrode 107 by a conventional electron beam heating deposition process. Thus, there were obtained a plurality of solar cell samples. For each of the solar cell samples, the characteristics to sunlight were examined by subjecting it to irradiation with AM-1.5 light of 100 mW/cm² in intensity, which has spectra approximate to sunlight spectra in terms of AM value, using a solar simulator with a xenon lamp. Of these solar cell samples, 10 solar cell samples which are substantially uniform in view of the examined characteristics were evaluated with respect to open circuit voltage (Voc), short circuit current per unit area (Joc), fill factor (F.F.), and photoelectric conversion efficiency (η) respectively by a conventional method. The results obtained were as shown in Table 2. Each of the evaluated values shown in Table 2 is a mean value among the 10 solar cell samples. In addition, AM-1.5 light of 100 mW/cm² in intensity was irradiated through a filter (which does not permit light of less than 600 nm in wavelength to transmit therethrough) to each of the solar cell samples, to thereby examine its characteristics to long wavelength light with respect to the same evaluation items as in the above. The results obtained were shown in Table 3. Each of the evaluated values shown in Table 3 is a mean value among the 10 solar cell samples. Independently, the above procedures of forming the i-type semiconductor layer 104 were repeated to form a non-doped a-SiGe:H film on a glass plate. As for the resultant a-SiGe:H film, the profile of the optical band gap (Eg opt) was observed based on the wavelength properties in the relation between a given wavelength and light extinction coefficient which were obtained in accordance with a conventional optical band gap evaluating method, for example, disclosed in The Basis of Amorphous Semiconductors, edited by M. Kikuchi et al, pp. 90-92, published by Kabushiki Kaisha Ohm Sha, May 10, 1983). In addition, the Ge content was observed by a commercially available X-ray microanalyzer (XMA). The observed results were collectively shown in Table 1. And, the results shown in Table 1 were graphically illustrated in FIG. 9. From what shown in Table 1 and FIG. 9, it is understood that the gradient of the optical band gap in the region of the i-type semiconductor layer 104 situated on the side of the n-type semiconductor layer 103, that is, in the region between C and D in FIG. 9, is 2.7 eV/ µm; the gradient of the optical band gap between the minimum point B of the optical band gap of the i-type semiconductor layer and said point C is 0.67 eV/ µm; and the gradient of the former optical band gap is greater than that of the latter optical band gap. Example 2 In this example, there was prepared a pin junction solar cell of the configuration shown in FIG. 1 in which the i-type semiconductor layer 104 comprises a-SiGe, repeating the procedures of Example 1, except for changing the flow rate pattern of the GeH₄ gas in the formation of the i-type semiconductor layer. That is, the i-type layer comprising a-SiGe:H film was formed by repeating the same procedures of forming the i-type semiconductor layer 104 in Example 1, except that GeH₄ gas was introduced into the deposition chamber 201 following the flow rate pattern shown in FIG. 10. Particularly in this respect, the mass flow controller for the GeH₄ gas was controlled so that the flow rate of GeH₄ gas followed the convex curve from the interface (D point in FIG. 10) with the n-type semiconductor layer 103 to the minimum point (B point in FIG. 10) of the band gap of an i-type semiconductor layer to be formed. In this case, it was estimated that there would be resulted a band gap of being continuously and gently graded from the minimum point towards the n-type semiconductor layer 103 and being steeply graded as it reaches the n-type semiconductor layer 103 as shown in FIG. 11. In the process of forming the i-type semiconductor layer, for last 4 minutes, film formation was performed without introducing the GeH₄ gas into the deposition chamber 201 (see, FIG. 10), to thereby form an intermediate layer (B AE in FIG. 11) comprising a-Si:H at the interface portion with the p-type semiconductor layer 105. Thus, there was obtained a pin junction solar cell element sample. The sample thus obtained was cut into a plurality of specimens respectively of 1 cm x 1 cm in size. On each of the specimens was formed an aluminum thin film to be the collecting electrode 107 by a conventional electron beam heating deposition process. Thus, there were obtained a plurality of solar cell samples. These solar cell samples were examined in the same manner as in Example 1. Of these solar cell samples, 10 solar cell samples which are substantially uniform in view of the examined characteristics were evaluated with respect to open circuit voltage (Voc), short circuit current per unit area (Joc), fill factor (F.F.), and photoelectric conversion efficiency (η) respectively by a conventional method. The results obtained were as shown in Table 2. Each of the evaluated values shown in Table 2 is a mean value among the 10 solar cell samples. In addition, AM-1.5 light of 100 mW/cm² in intensity was irradiated through a filter (which does not permit light of less than 600 nm in wavelength to transmit therethrough) to each of the solar cell samples, to thereby examine its characteristics to long wavelength light with respect to the same evaluation items as in the above. The results obtained were shown in Table 3. Each of the evaluated values shown in Table 3 is a mean value among the 10 solar cell samples. Comparative Example 1 For comparison purposes, there was prepared a comparative pin junction a-SiGe solar cell of the known constitution. This solar cell is one that does not have any gradient in the band gap of the i-type semiconductor layer. FIG. 16 shows the profile of an energy band of this solar cell. In this solar cell, there are provided an intermediate layer B AE , a graded intermediate layer B EB and a graded intermediate layer B F D in the i-type semiconductor layer in order to reduce a discontinuation in the band gap at the interface between the p-type semiconductor layer and the i-type semiconductor layer and at the interface between the n-type semiconductor layer and the i-type semiconductor layer and in order to reduce interface states. The optical band gap Eg opt of the region I BF in the i-type semiconductor layer is l.45 eV. The comparative pin junction a-SiGe solar cell of the known constitution was prepared by repeating the procedures of Example 1, except for the step of forming the i-type semiconductor layer. That is, the i-type layer of the comparative pin junction solar cell was formed by repeating the same procedures of forming the i-type semiconductor layer 104 in Example 1, except that GeH₄ gas was introduced into the deposition chamber 201 while controlling the flow rate thereof from 0 sccm to 0.6 sccm, to thereby form a 20 nm thick i-type film as the i-type semiconductor layer containing the foregoing intermediate layer and the foregoing two graded intermediate layers with the band gap constitution shown in FIG. 16. Thus, there was obtained a comparative pin junction solar cell element sample. The sample thus obtained was cut into a plurality of specimens respectively of 1 cm x 1 cm in size. On each of the specimens was formed an aluminum thin film to be the collecting electrode 107 by a conventional electron beam heating deposition process. Thus, there were obtained a plurality of solar cell samples. These solar cell samples were examined in the same manner as in Example 1. Of these solar cell samples, 10 solar cell samples which are substantially uniform in view of the examined characteristics were evaluated with respect to open circuit voltage (Voc), short circuit current per unit area (Joc), fill factor (F.F.), and photoelectric conversion efficiency (η) respectively by a conventional method. The results obtained were as shown in Table 2. Each of the evaluated values shown in Table 2 is a mean value among the 10 solar cell samples. In addition, AM-1.5 light of 100 mW/cm² in intensity was irradiated through a filter (which does not permit light of less than 600 nm in wavelength to transmit therethrough) to each of the solar cell samples, to thereby examine its characteristics to long wavelength light with respect to the same evaluation items as in the above. The results obtained were shown in Table 3. Each of the evaluated values shown in Table 3 is a mean value among the 10 solar cell samples. Comparative Example 2 For comparison purposes, there was prepared a comparative solar cell of the same constitution as disclosed in U.S. Patent No. 4,816,082. This solar cell is of the profile of an energy band as shown in FIG. 17. This solar cell is such that the band gap of a region I BC comprising an i-type semiconductor adjacent to the n-type semiconductor layer is widened on the side of the n-type semiconductor layer, the band gap is minimum at the boundary portion between a region I EB and a region I BC of the i-type semiconductor layer, and an intermediate layer B AE is present between a p-type semiconductor region P and the region I EB . This comparative solar cell was prepared by repeating the procedures of Example 1, except for the step of forming the i-type semiconductor layer. That is, the i-type layer of the comparative pin junction solar cell was formed by repeating the same procedures of forming the i-type semiconductor layer 104 in Example 1, except that GeH₄ gas was introduced into the deposition chamber 201 while controllin the flow rate thereof from 0 sccm to 0.6 sccm, to thereby form a 20 nm thick i-type semiconductor layer having the band gap constitution shown in FIG. 17. Thus, there was obtained a comparative pin junction solar cell element sample. The sample thus obtained was cut into a plurality of specimens respectively of 1 cm x 1 cm in size. On each of the specimens was formed an aluminum thin film to be the collecting electrode 107 by a conventional electron beam heating deposition process. Thus, there were obtained a plurality of solar cell samples. These solar cell samples were examined in the same manner as in Example 1. Of these solar cell samples, 10 solar cell samples which are substantially uniform in view of the examined characteristics were evaluated with respect to open circuit voltage (Voc), short circuit current per unit area (Joc), fill factor (F.F.), and photoelectric conversion efficiency (η) respectively by a conventional method. The results obtained were as shown in Table 2. Each of the evaluated values shown in Table 2 is a mean value among the 10 solar cell samples. In addition, AM-1.5 light of 100 mW/cm² in intensity was irradiated through a filter (which does not permit light of less than 600 nm in wavelength to transmit therethrough) to each of the solar cell samples, to thereby examine its characteristics to long wavelength light with respect to the same evaluation items as in the above. The results obtained were shown in Table 3. Each of the evaluated values shown in Table 3 is a mean value among the 10 solar cell samples. Comparative Evaluation Comparative studies were made of the solar cells obtained in Examples l and 2 and Comparative Examples l and 2. In comparison of each of the solar cells obtained in Examples 1 and 2 with the comparative solar cell obtained in Comparative Example 1, it is understood that any of the solar cells obtained in Examples 1 and 2 is surpassing the comparative solar cell obtained in Comparative Example l particularly with respect to open circuit voltage (Voc) and fill factor (F.F.) and any of the solar cells obtained in Examples 1 and 2 provides an improved photoelectric conversion efficiency. In comparison of each of the solar cells obtained in Examples l and 2 with the comparative solar cell obtained in Comparative Example 2, it is understood that any of the solar cells obtained in Examples 1 and 2 is surpassing the comparative solar cell obtained in Comparative Example 2 particularly with respect to short circuit current and fill factor (F.F.) and any of the solar cells obtained in Examples 1 and 2 provides an improved photoelectric conversion efficiency. Further in addition, 1n comparison of each of the solar cells obtained in Examples 1 and 2 with each of the comparative solar cells obtained in Comparative Examples 1 and 2, it is understood that the former is surpassing the latter in terms of photoelectric conversion efficiency in long wavelength light of more than 600 nm in wavelength. Example 3 There was prepared a pin junction solar cell of the configuration shown in FIG. 6 in which the i-type semiconductor layer 104 comprises a-SiGe, using the film-forming apparatus shown in FIG. 7. Film formation using the film-forming apparatus shown in FIG. 7 in this example was performed as follows. As the substrate 111, there was provided a no-alkali glass (commercially available under the trade name : No.7059 glass, produced by Corning Glass Works Company) of 5 cm x 5 cm in size. On the surface of this substrate lll were successively formed a 180 nm thick ITO film and a 20 nm thick SnO₂ film to be the transparent electrode 1116 by a conventional vacuum deposition high method, followed by subjecting to pattering into a lattice pattern. The substrate having the transparent electrode 116 formed thereon was placed on the surface of the substrate holder 204 of the film-forming apparatus shown in FIG. 7. Then, the inside of the deposition chamber 201 was evacuated by actuating the vacuum pump 207 to bring it to a vacuum degree of about 1.3 · 10⁻⁴ Pa (1 x 10⁻⁶ Torr). The vacuum degree in this case was observed by an ion gage (not shown). The heater 205 was actuated to heat the substrate lll to about 260 °C. After the temperature of the substrate lll became constant at this temperature, the main valve 2ll and the exit valve 210 were operated to introduce Si₂H₆ gas into the deposition chamber 201 at a flow rate of 1 sccm while controlling its flow rate by means of the mass flow controller 212. Likewise, H₂ gas and PH₃/H₂ gas (diluted to 5%) and CH₄ gas were introduced into the deposition chamber 201 at respective flow rates of 50 sccm, 1 sccm and 4 sccm. The gas pressure in the deposition chamber 20l was adjusted to and maintained at 1.6 hPa (1.2 Torr). Then, the high frequency power source 202 was switched on to apply a high frequency power of 1.5 W to the high frequency electrode 203, to thereby cause glow discharge in the deposition chamber. This film forming procedure was continued for 2 minutes. As a result, an about 12 nm thick n-type a-SiC:H film to be the n-type semiconductor layer 113 on the transparent electrode ll6. The application of the high frequency power and the introduction of the gases were suspended. The inside of the deposition chamber 20l was evacuated to a vacuum degree of about 1.3 · 10⁻⁴ Pa (1 x 10⁻⁶ Torr). Then, the procedures of forming the i-type semiconductor layer were repeated while maintaining the substrate at 260 °C, wherein the flow rate of the GeH₄ gas was changed from 0 sccm to 0.5 sccm following the flow rate pattern shown in FIG. 12 while controlling the corresponding mass flow controller by a microcomputer, except that during first 3 minute's period from the start of film formation, an intermediate layer comprising a-SiC:H was formed in the region adjacent to the n-type semiconductor layer by introducing CH₄ gas at a linearly reducing flow rate starting at 4 sccm and ending at 0 sccm at the time when the period of 3 minutes laps as shown in Table 12 while not introducing the GH₄ gas, and during last 3 minute's period, another intermediate layer comprising a-Si:H was formed without introducing the GeH₄ gas. As a result, there was formed an about 325 nm thick i-type semiconductive layer 114 containing the foregoing two intermediate layers on the previously formed n-type layer. As apparent from the observed results which will be later described, the resultant i-type semiconductor layer was found to have such band gap structure as shown in FIG. 13. In FIG. 13, the region B FD corresponds to the former intermediate layer and the region B AE corresponds to the latter intermediate layer. After the formation of the i-type semiconductor layer completed, the application of the high frequency power and the introduction of the gases were suspended. The inside of the deposition chamber 201 was evacuated to a vacuum degree of about 1.3 · 10⁻⁴ Pa (1 x 10⁻⁶ Torr). Then the p-type semiconductor layer 115 was formed in the same manner as in the case of forming the n-type semiconductor layer 113 under the following conditions. raw material gases used & their flow rates: Si₂H₆ gas : 1 sccm H₂ gas : 75 sccm B₂H₆/H₂ gas (diluted to 2%) : 1 sccm the gas pressure in the deposition chamber: 1.3 hPa (1.0 Torr) high frequency power applied: 2 W As a result, there was formed a 20 nm thick p-type a-Si:H film to be the p-type semiconductor layer 115 on the previously formed i-type semiconductor layer 114. After the formation of the p-type semiconductor layer 105 completed, the application of the high frequency power and the introduction of the gases were terminated. The resultant was cooled, and it was transferred into a conventional vacuum deposition apparatus, wherein on the previously formed p-type semiconductor layer were successively formed a 20 nm thick Cr film and a 180 nm thick Al film to be the lower electrode 112, followed by subjecting to patterning. Thus, there was obtained a pin junction solar cell element sample. The sample thus obtained was cut into a plurality of specimens respectively of l cm x 1 cm in size. Thus, there were obtained a plurality of solar cell samples. For each of the solar cell samples, the characteristics to sunlight were examined in the same manner as in Example 1. Of these solar cell samples, 10 solar cell samples which are substantially uniform in view of the examined characteristics were evaluated with respect to open circuit voltage (Voc), short circuit current per unit area (Joc), fill factor (F.F.), and photoelectric conversion efficiency (η) respectively by a conventional method. The results obtained were as shown in Table 5. Each of the evaluated values shown in Table 5 is a mean value among the 10 solar cell samples. In addition, AM-1.5 light of 100 mW/cm² in intensity was irradiated through a filter (which does not permit light of less than 600 nm in wavelength to transmit therethrough) to each of the solar cell samples, to thereby examine its characteristics to long wavelength light with respect to the same evaluation items as in the above. The results obtained were shown in Table 5. Each of the evaluated values shown in Table 5 is a mean value among the 10 solar cell samples. Independently, as for the above i-type semiconductor layer, the optical band gap and the Ge content were observed in the same manner as in Example 1. The observed results obtained were shown in Table 4. And the results shown in Table 4 were graphically illustrated in FIG. 13. From the results obtained, it was found that any of the solar cell samples obtained in this example is satisfactory in photovoltaic characteristics. Example 4 There was prepared a pin junction tandem type solar cell comprising two pin junction solar cell units being stacked of the configuration shown in FIG. 14. The pin junction tandem type solar cell shown in FIG. 14 comprises a lower electrode 132, a first pin junction cell unit l2l (comprising a first n-type semiconductor layer 133, a first i-type semiconductor layer 134 and a first p-type semiconductor layer 135 being laminated), a second pin junction solar cell unit 122 (comprising a second n-type semiconductor layer 136, a second i-type semiconductor layer 137 and a second p-type semiconductor layer 138 being laminated) and a transparent electrode 139 being stacked in this order on a substrate 131. Reference numeral 140 stands for a collecting electrode disposed on the transparent electrode 139. In this pin junction tandem type solar cell, the first i-type semiconductor layer 134 has a bad gap graded in the thickness direction as well as the i-type semiconductor layer of the pin junction solar cell obtained in Example 1, but the second i-type semiconductor layer 137 does not have such graded band gap. This pin junction tandem type solar cell was prepared in the following manner. That is, as the substrate 131, there was provided a SUS 304 stainless steel plate. On the surface of this substrate 131 were successively formed a 100 nm thick Ag film and a 400 nm thick ZnO film to be the lower electrode 132 by a conventional high frequency sputtering method. The substrate having the lower electrode 132 formed thereon was placed on the surface of the substrate holder 204 of the film-forming apparatus shown in FIG. 7. Then, by repeating the procedures of Example 1, on the lower electrode 132 were formed the first n-type semiconductor layer 133 and the first i-type semiconductor layer 134. Thereafter, the procedures of forming the p-type semiconductor layer were repeated, except that the substrate temperature was changed to 260 °C, to thereby form the first p-type semiconductor layer 135. Thus, there was formed the first pin junction solar cell unit 121. Successively the procedures of Example 1 for forming the n-type semiconductor layer in Example 1 were repeated, except that the substrate temperature was changed to 240 °C, to thereby form the second n-type semiconductor layer 136 of 18 nm in thickness on the previously formed first p-type semiconductor layer 135. The application of the high frequency power and the introduction of the gases were suspended. The inside of the deposition chamber 201 was evacuated to a vacuum degree of about 1.3 · 10⁻⁴ Pa (1 x 10⁻⁶ Torr). The formation of the second i-type semiconductor layer 137 was performed in the same manner as in the case of forming the n-type semiconductor layer in Example 1 and under the following conditions. raw material gases used & their flow rates: Si₂H₆ gas : 1 sccm H₂ gas : 50 sccm the gas pressure in the deposition chamber: 1.53 hPa (1.15 Torr) high frequency power applied: 1.2 W substrate temperature: 240 °C film formation period of time: 30 minutes As a result, there was formed a non-doped a-Si:H film to be the second i-type semiconductor layer 137 on the previously formed second n-type semiconductor layer 136. Successively the procedures of Example 1 for forming the p-type semiconductor layer were repeated, except that the substrate temperature was changed to 200 °C, to thereby form the second p-type semiconductor layer 138 of 5 nm in thickness on the previously formed second i-type semiconductor layer 137. After the formation of the second p-type semiconductor layer 138 completed, the application of the high frequency power and the introduction of the gases were terminated. The resultant was cooled, and it was transferred into a conventional vacuum deposition apparatus, wherein on the previously formed p-type semiconductor layer 138 was formed a 70 nm thick ITO film to be the transparent electrode 139. Thus, there was obtained a pin junction tandem type solar cell element sample. The sample thus obtained was cut into a plurality of specimens respectively of 1 cm x 1 cm in size. On each of the specimens was formed an aluminum thin film to be the collecting electrode 140 by a conventional electron beam heating deposition process. Thus, there were obtained a plurality of solar cell samples. These solar cell samples were examined in the same manner as in Example 1. Of these solar cell samples, 10 solar cell samples which are substantially uniform in view of the examined characteristics were evaluated with respect to open circuit voltage (Voc), short circuit current per unit area (Joc), fill factor (F.F.), and photoelectric conversion efficiency (η) respectively by a conventional method. The results obtained were as shown in Table 6. Each of the evaluated values shown in Table 6 is a mean value among the 10 solar cell samples. In addition, AM-1.5 light of 100 mW/cm² in intensity was irradiated through a filter (which does not permit light of less than 600 nm in wavelength to transmit therethrough) to each of the solar cell samples, to thereby examine its characteristics to long wavelength light. As a result, each of the solar cell samples was found to be excel in the characteristics to long wavelength light. From these results, it was found that any of the solar cell samples exhibits an improved photoelectric conversion efficiency. Example 5 There was prepared a pin junction triple cell type solar cell comprising three pin junction solar cell units being stacked of the configuration shown in FIG. 15. The pin junction triple cell type solar cell shown in FIG. 15 comprises a lower electrode 152, a first pin junction cell unit 141 (comprising a first n-type semiconductor layer 153, a first i-type semiconductor layer 154 and a first p-type semiconductor layer 155 being laminated), a second pin junction solar cell unit 142 (comprising a second n-type semiconductor layer 156, a second i-type semiconductor layer 157 and a second p-type semiconductor layer 158 being laminated), a third pin junction solar cell unit 143 (comprising a third n-type semiconductor layer 159, a third i-type semiconductor layer 160 and a third p-type semiconductor layer 161 being laminated), and a transparent electrode l62 being stacked in this order on a substrate 151. Reference numeral 163 stands for a collecting electrode disposed on the transparent electrode 162. In this pin junction triple cell type solar cell, the first i-type semiconductor layer 154 has a bad gap graded in the thickness direction as well as the i-type semiconductor layer of the pin junction solar cell obtained in Example 2, but each of the second and third i-type semiconductor layers 157 and 160 does not have such graded band gap. This pin junction triple cell type solar cell was prepared in the following manner. That is, as the substrate 151, there was provided a SUS 304 stainless steel plate. On the surface of this substrate 151 were successively formed a 100 nm thick Ag film and a 400 nm thick ZnO film to be the lower electrode 152 by a conventional high frequency sputtering method. The substrate having the lower electrode 152 formed thereon was placed on the surface of the substrate holder 204 of the film-forming apparatus shown in FIG. 7. Then, by repeating the procedures of Example 1, on the lower electrode 152 were formed the first n-type semiconductor layer 153. Then the procedures of Example 2 for forming the i-type semiconductor layer were repeated, except that the substrate temperature was changed to 320 °C, to thereby form the first i-type semiconductor layer 154 comprising a-SiGe:H. Successively the procedures of Example 1 for forming the p-type semiconductor layer were repeated, except that the substrate temperature was changed to 300 °C, to thereby form the first p-type semiconductor layer 155. Thus, there was formed the first pin junction solar cell unit 141 with a pin junction having a graded band gap similar to that in Example 2 which is shown in FIG. 11. Then the procedures of Example 1 for forming the n-type semiconductor layer were repeated, except that the substrate temperature was changed to 280 °C, to thereby form the second n-type semiconductor layer 156 comprising a-Si:H. Successively the procedures of Example 4 for forming the second i-type semiconductor layer were repeated, except that the substrate temperature was changed to 280 °C and film formation was performed for 75 minutes, to thereby form the second i-type semiconductor layer 157 comprising a 500 nm thick a-Si:H film. The procedures of Example 1 for forming the p-type semiconductor layer were repeated to thereby form the second p-type semiconductor layer 158. Thus, there was formed the second pin junction solar cell unit 142 with a pin junction not having a graded band gap. Then the procedures of Example 1 for forming the n-type semiconductor layer were repeated, except that the substrate temperature was changed to 220 °C, to thereby form the third n-type semiconductor layer 159 comprising a-Si:H. Successively the procedures of Example 4 for forming the second i-type semiconductor layer were repeated, except that film formation was performed for 12 minutes, to thereby form the third i-type semiconductor layer 160 comprising a 80 nm thick a-Si:H film. The procedures of Example 4 for forming the second p-type semiconductor layer were repeated to thereby form the third p-type semiconductor layer 161. Thus, there was formed the third pin junction solar cell unit 143 with a pin junction not having a graded band gap. After the formation of the third p-type semiconductor layer 161 completed, the application of the high frequency power and the introduction of the gases were terminated. The resultant was cooled, and it was transferred into a conventional vacuum deposition apparatus, wherein on the previously formed p-type semiconductor layer 161 was formed a 70 nm thick ITO film to be the transparent electrode 162. Thus, there was obtained a pin junction triple cell type solar cell element sample. The sample thus obtained was cut into a plurality of specimens respectively of 1 cm x 1 cm in size. On each of the specimens was formed an aluminum thin film to be the collecting electrode 163 by a conventional electron beam heating deposition process. Thus, there were obtained a plurality of solar cell samples. These solar cell samples were examined in the same manner as in Example 1. Of these solar cell samples, 10 solar cell samples which are substantially uniform in view of the examined characteristics were evaluated with respect to open circuit voltage (Voc), short circuit current per unit area (Joc), fill factor (F.F.), and photoelectric conversion efficiency (η) respectively by a conventional method. The results obtained were as shown in Table 6. Each of the evaluated values shown in Table 6 is a mean value among the 10 solar cell samples. In addition, AM-1.5 light of 100 mW/cm² in intensity was irradiated through a filter (which does not permit light of less than 600 nm in wavelength to transmit therethrough) to each of the solar cell samples, to thereby examine its characteristics to long wavelength light. As a result, each of the solar cell samples was found to be excel in the characteristics to long wavelength light. From these results, it was found that any of the solar cell samples exhibits an improved photoelectric conversion efficiency. Further Evaluation Of the solar cell samples obtained in each of Examples 1 and 2 and Comparative Example 1, a plurality of solar cell samples were randomly selected in each case. (1) For each of those solar cell samples, the characteristics to sunlight by subjecting it to irradiation with AM-1.5 light of 100 mW/cm² in intensity, which has spectra approximate to sunlight spectra in termes of AM value using a solar simulator, in the same manner as in Example 1. The results obtained were collectively shown in FIG. 18. (2) AM-1.5 light of 100 mW/cm² in intensity was irradiated through a filter (which does not permit light of less than 600 nm in wavelength to transmit therethrough) to each of those solar cell samples, to thereby examine its characteristics to long wavelength light in the same manner as in Example 1. The results obtained were collectively shown in FIG. 19. From the results shown in FIGs. 18 and 19, it is apparently understood that any of the solar cell samples obtained in Examples 1 and 2 of the present invention is surpassing any of the solar cell samples obtained in accordance with the prior art in Comparative Example 2 particularly with respect to deterioration in the fill factor. distance from the interface with the n-type semiconductor layer(Å) optical band gap Eg opt (eV) Ge content (atomic%) 0 1. 70 0 750 1. 50 32 1500 1. 45 40 1750 1. 70 0 2000 1. 70 0 open circuit voltage (v) short circuit current Jsc (mA/cm²) fill factor (F.F.) (%) photoelectric convension efficiency η (%) Example 1 0. 712 22. 3 60. 2 9. 56 Example 2 0. 710 22. 6 59. 7 9. 58 Comparative Example 1 0. 672 22. 8 53. 0 8. 12 Comparative Example 2 0. 715 21. 8 58. 5 9. 12 open circuit voltage (v) short circuit current Jsc (mA/cm²) fill factor (F.F.) (%) photoelectric conversion efficiency η (%) Example 1 0. 711 10. 3 59. 6 4. 36 Example 2 0. 708 10. 5 59. 4 4. 42 Comparative Example 1 0. 670 10. 6 49. 6 3. 52 Comparative Example 2 0. 713 9. 8 57. 8 4. 04 distance from the interface with the n-type semiconductor layer(Å) optical band gap Eg opt (eV) Ge content (atomic%) 0 2. 0 0 250 1. 75 0 1250 1. 55 26 2850 1. 48 38 3050 1. 75 0 3250 1. 75 0 open circuit voltage (v) short circuit current Jsc (mA/cm²) fill factor (F.F.) (%) photoelectric conversion efficiency η (%) sunlight 0. 763 21. 2 56. 5 9. 14 long wavelength light 0. 760 9. 7 56. 2 4. 14 open circuit voltage (v) short circuit current Jsc (mA/cm²) fill factor (F.F.) (%) photoelectric conversion efficiency η (%) Example 4 1. 650 11. 28 70. 4 13. 1 Example 5 2. 540 7. 69 70. 2 13. 7

Claims: A pin junction photovoltaic element having an i-type semiconductor layer (104) formed of a band gap variable semiconductor material between a p-type semiconductor layer (105; P) and an n-type semiconductor layer (103; N), wherein said i-type semiconductor layer is formed of a silicon-containing amorphous band gap variable semiconductor material; said i-type semiconductor layer contains a first region (I AB ; I EB ) which is positioned on the side of said p-type semiconductor layer and has a graded band gap which increases towards the side of said p-type semiconductor layer, a second region (I BC ) which is adjacent to said first region (I AB ; I EB ), and a third region (I CD ; I DE ; I CF ) which is positioned on the side of said n-type semiconductor layer and has a graded band gap which increases towards the side of said n-type semiconductor layer, wherein the gradient of the band gap of said third region (I CD ; I DE ; I CF ) is greater than that of said second region (I BC ); characterized in that said second region (I BC ) has a graded band gap which increases towards the side of said n-type semiconductor layer, so that said i-type semiconductor layer has a minimum band gap at the boundary between said first region (I AB ; I EB ) and said second region ( I BC ), and the thickness of said first region (I AB ; I EB ) is less than one-half of the total thickness of said i-type semiconductor layer. A pin junction photovoltaic element according to claim 1, wherein the second region and the third region are formed such that their band gaps are continuously graded across their interface. A pin junction photovoltaic element according to claim 1 which further comprises a fourth region (I CD ) having a graded band gap between the second region (I BC ) and the third region (I DE ), wherein the gradient of the band gap of said fourth region is greater than that of the second region but smaller than that of the third region. A pin junction photovoltaic element according to claim 1 which further comprises an intermediate layer (B AE ) of 50 nm or less in thickness between the p-type semiconductor layer (P) and the first region (I EB ) of the i-type semiconductor layer, and another intermediate layer (B FD ) of 50 nm or less in thickness between the third region (I CF ) of the i-type semiconductor layer and the n-type semiconductor layer (N).

Inventors: MATSUDA KOICHI, MATSUYAMA JINSHO, MURAKAMI TSUTOMU, YAMAMOTO HIROSHI, YAMASHITA TOSHIHIRO, MATSUDA, KOICHI, MATSUYAMA, JINSHO, MURAKAMI, TSUTOMU, YAMAMOTO, HIROSHI, YAMASHITA, TOSHIHIRO, MATSUDA, KOICHI, C/O CANON KABUSHIKI KAISHA, MATSUYAMA, JINSHO, C/O CANON KABUSHIKI KAISHA, MURAKAMI, TSUTOMU, C/O CANON KABUSHIKI KAISHA, Yamamoto, Hiroshi, c/o Canon Kabushiki Kaisha, Yamashita, Toshihiro, c/o Canon Kabushiki Kaisha
Applicants: CANON KK, CANON KABUSHIKI KAISHA
Application year: 1991
Main classification: H01L31
IPC codes: H01L31