A fabrication method for semiconductor devices

Abstract: A fabrication method for semiconductor devices connecting a multi-crystal semiconductor thin film and a semiconductor region including a high density of an impurity formed in a single crystal semiconductor substrate (100). After forming a N-type semiconductor region (116) as the emitter by ion implanting, for instance, as into a P-type semiconductor region (106) as the base, a polysilicon thin film 114 is deposited so as to be implanted with As ions and then heat treated. In this case, an amorphous portion of the N-type semiconductor region (116) and an amorphous silicon thin film (110) in contact therewith are transformed by solid phase epitaxial growth so as to form a single crystal semiconductor region (116), a single-crystalline silicon thin film (110A), and a polysilicon thin film (110B), thus forming a bipolar element having an emitter.

Description: BACKGROUND OF THE INVENTION The present invention generally relates to a manufacturing method for semiconductor devices, and more particularly, to a manufacturing method for improving the electrical characteristic in the connection between the polycrystalline semiconductor thin film to be used for bipolar type or field effect type integrated circuit transistors and semiconductor region including high density impurities formed in the single crystal (more crystalline) semiconductor substrate. In the bipolar type or field effect type semiconductor circuit, the usefulness of using polycrystalline semiconductors for accomplishing miniaturized elements has been recognized. For example, in the field of silicon semiconductor bipolar technology, it has become a common practice to use polycrystalline silicon as a diffusion source for fine wirings (electrodes) or shallow junctions, and particularly, the polysilicon electrode lead-out as a means for forming an emitter region of fine planar dimensions suitable for a high speed operation has become an indispensable technology. As an example of an emitter in which arsenic is diffused from poly-silicon, there is proposed "Self-aligned Double Diffusion polysilicon technology" (K.Kikuchi et al. International Electron device meeting Technical Digest of Papers pp. 420-423, 1986). According to this technic, a shallow emitter of about 50 nanometer junction depth was obtained by subjecting arsenic with a dose amount of 1 x 10 16 /cm 2 implanted into a polysilicon layer of about 300 nanometer thickness to a heat treatment at 900 °C for 30 minutes for thermal diffusion. Furthermore, as shown in Fig. 19, an emitter of about 180 nanometer junction depth was formed by using a similar polysilicon and diffusing arsenic implanted therein under conditions of heat treatment of a comparatively high temperature (1000°C, 20 min.). On the other hand, it is known in the art that since diffusion at a higher temperature and a longer time is required to form a further deeper emitter, the semiconductor region such as a base region having been already formed by the foregoing process is consequently diffused too deep, so that it becomes impossible to obtain a transistor structure suitable for high speed operation. More specifically, in the process using thermal diffusion at a comparatively higher temperature (1000°C, 20 min.) for forming such an emitter of 180 nanometer depth which is suitable for high speed operation, the depth of the base region having been beforehand formed by ion implanting such as boron becomes larger than 400 to 500 nanometer. For example, in a currently commercially available ion implanter, in the case of forming a p-type base region with such a minimum implant acceleration energy (for example, 25 KeV) that is most stable with a little fluctuation, the junction depth of the base becomes about 500 nanometer, and, since the depth of the emitter formed at that time is about 180 nanometer, a transistor of about 320 nanometer base width is formed. A typical collector cut-off frequency f T of the transistor of 320 nanometer base width becomes about 5 GHz, and in order to manufacture a higher performance transistor of 10 GHz f T , it is necessary to make the base depth to be 100 to 200 nanometer. In order for this, the target width of the emitter to be formed by the thermal diffusion from polysilicon should be about 300 nanometer or more, and, accordingly, a heat treatment at a very high temperature and for a long time will be required, and actually, the base depth becomes considerably deep on the contrary. According to this method, there is no possibility of realizing a transistor of 100 to 200 nanometer base width. On the other hand, as a method for forming emitter-base junctions adopted in the fabricating method of bipolar transistors, there has been proposed a method of directly implanting ions such as arsenic ions into P-type bases. For example, as shown in Fig. 20. arsenic of 1 X 10 16 /cm 2 was directly ion implanted into polysilicon at an acceleration energy of 50 KeV, and subjected to a heat treatment at 1000°C. The emitter depth after the heat treatment for 60 min. diffusion time (t=60 min.) was about 430 nanometer, that for 20 min. diffusion time (t=20 min.) was about 260 nanometer, while that of no heat treatment, that is, immediately after implanting (t=0 min.), was about 100 nanometer. As shown in Fig. 19, although the emitter depth obtained by diffusing arsenic from polysilicon through the heat treatment of 1000°C and 20 min. was about 180 nanometer, the emitter depth obtained by directly ion implanting arsenic into silicon and subjecting to a heat treating under the same conditions as above, that is, 1000°C and 20 min. was about 260 nanometer, as shown in Fig. 20, which was 80 nanometer deeper than the emitter depth obtained by diffusing from polysilicon. In this case, since the total amount of the arsenic impurity in silicon becomes larger in the case of direct ion implanting, the emitter resistance can be advantageously made small. Furthermore, in the case of forming an emitter though the direct ion implanting, with respect to the lead-out method for such as Al electrode, it has become a common practice to directly lead out metallic electrodes from each emitter surface without using electrodes of polycrystalline semiconductors as intermediate layers. As a problem in the case of forming an emitter by diffusion from polysilicon as shown in Fig. 19, there is mentioned existence of a silicon oxide thin film (residual insulation film) naturally formed between a polysilicon layer and a single crystal (monocrystalline) silicon substrate. This natural oxide film grows to a thickness of less than about 2 nanometer when non-single-crystal (non-more crystalline) semiconductor thin film such as polysilicon or amorphous silicon is deposited, and due to the variation of this thickness, the diffusion depth for the emitter becomes unstable, and furthermore, when this oxidized film becomes thick, the series resistance of the emitter is increased, resulting in deterioration or fluctuation in the transistor characteristic. This problem makes it more difficult to leat out an electrode of a non-single-crystal material such as polysilicon or amorphous silicon from the emitter after forming the same deeply by the ion implanting method as shown in Fig. 20. That is, when polysilicon is deposited on the surface of the silicon containing a high density of surface impurities such as arsenic, the natural oxide film grows thicker than in the case of a silicon surface containing a lower density of surface impurities, whereby the ohmic contact between the emitter and the deposited polysilicon is further deteriorated, resulting in a rapid increase in the resistance of the emitter. Accordingly, a first technical task to be attained is to remove the instability due to the natural oxide film. A second technical task of the present invention is to form a comparatively deep or comparatively shallow junction of a predetermined depth through a heat treatment of a comparatively low diffusion temperature or a heat treatment of a comparatively high temperature and a short time. If a homogeneous junction of a predetermined depth for such as an emitter and the like can be formed through a heat treatment of a comparatively low diffusion temperature or that of a comparatively high temperature and a short time, a transistor structure of narrow base width having an excellent high speed characteristic can be realized. For example, in order to form an emitter of about 250 nanometer according to a method as shown in Fig. 19, a high temperature heat treatment of 1000°C and about 20 min. is required, and the base region to be formed simultaneously is diffused too deep, and thereby the transistor structure suitable for high speed operation can not be realized. Further, in the conventional method mentioned above, there is such a problem that a solid phase epitaxial growth of silicon is caused in the polysilicon film re-aligning to the silicon substrate, when the emitter diffusion from polysilicon is performed at 900°C. This phenomenon is reported in a paper by S. Ozono et. al. entitled "Redistribution of heavily doped Arsenic in Poly-Si Film on Single Silicon Substrate during its Solid Phase Epitaxial Growth", 177th Electrochemical Society Meeting, Abstract No. 378, 1990, pp. 569 to 570. In the case where influences due to the silicon oxide film, the process contamination, the etching damage by plasma and the like are small at the boundary (interface) between the polysilicon electrode and the silicon substrate, it is known that, when arsenic in polysilicon is thermally diffused, a solid phase epitaxial growth of silicon aligned to the face orientation of the silicon substrate takes place and a re-crystallized silicon of about 200 nanometer height is formed. By the formation of the re-crystallized silicon, the depth of the emitter diffusion layer becomes shallower than in the case where no epitaxial growth takes place and the current gain of the emitter is reduced. In the case of formation of a solid phase epitaxial layer, the reliability is reduced as the emitter area becomes large. Thus, third technical task to be attained by the present invention is to prevent the solid phase epitaxial growth upon heat treating the emitter. Furthermore, in the case of trial fabrication for NPN transistors for 0.5 µm Bi-CMOS, accompanying the low temperature trend of the CMOS process for accomplishing a high package density, both of a diffusion furnace heat treatment at 800 to 850°C and 1 or a heat treatment by the RTA (Rapid Thermal Annealing) at 1000 to 1100°C are proposed as heat treatment for the emitter. In the heat treatment at 800 to 850°C, because of the existence of a residual insulation film (natural silicon oxide film) between the polysilicon thin film and the silicon single crystal substrate, the arsenic impurities forming the emitter can not be diffused from the polysilicon thin film, and therefore, it is necessary to diffuse arsenic by a heat treatment at a high temperature but for a short time such as RTA or the like. The NPN transistors made on the trial basis under such conditions realize a high performance of 15 GHz fr at a collector-emitter breakdown voltage (BV ceo ) of 6 V and an emitter-base breakdown voltage (BV ebo ) of 3 V. As the problems in the process, stabilizing the emitter diffusion by RTA of poor reproducibility and ensuring an emitter-base breakdown voltage sufficiently larger than the power supply voltage for insuring the reliability have become near future problems to be solved. The inventors of the present invention proposed a basic idea on which the present invention is based in a US Patent Application SN 378,671 filed on July 12, 1989, to solve the problems mentioned above in which there is disclosed a method for fabricating a semiconductor device which comprises providing a semiconductor substrate having a single crystalline semiconductor layer of a first conductivity type forming a first semiconductive region of a second conductivity type in the single crystalline semiconductor layer forming a dielectric film on the semiconductor substrate prior to or after the formation of the first semiconductor region making at least one opening in the dielectric film to expose the first semiconductive region forming a first non-crystalline semiconductor film on the surface of the first semiconductive region in the opening forming a second semiconductive region of the first conductivity type into the first semiconductive region by implanting an impurity of the first conductivity type through the first semiconductor film forming a second non-crystalline semiconductor film on the first semiconductor film and in corporating an impurity of the first conductivity type into the second semiconductor film. SUMMARY OF THE INVENTION An essential object of the present invention is to provide a new method on the basis of the invention mentioned above which is able to form a homogeneous emitter of a desired depth with good reproducibility. One more object of the present invention is to provide a fabrication method for semiconductor devices which is capable of removing instabilities due to a natural oxide film formed upon depositing a non-single crystal semiconductor film on a single crystal substrate such as a single crystal silicon substrate. A further object of the present invention is to provide a fabrication method for semiconductor devices which is capable of utilizing the solid phase epitaxial growth caused during the emitter diffusion to reduce a base current of a transistor and, thereby, increase the current gain thereof. A further more object of the present invention is to provide a fabrication method for semiconductor devices being capable of realizing high performance devices with a reduced junction capacitance. In order to accomplish the above-described objects, according to the present invention, there is provided a fabrication method for semiconductor devices comprising steps of forming a first residual insulation film on a single crystal semiconductor layer (104) of a first conductive type; forming a first semiconductor region (106) of a second conductive type in said single cry-stal semiconductor layer (104) prior to or after the formation of said first insulation film; forming a first non-single crystalline semiconductor thin film (110) on the surface of said first residual insulation film; implanting ions of an impurity of the first conductive type, through said first semiconductor thin film (110), into an area of said first semiconductor region (106) to form a second semiconductor region (112, 112A, 116, 116A) of the first conductive type and, by this ion implanting, destroying said first residual insulation film and, at the same time, forming amorphous regions in said second semiconductor region (112, 112A, 116, 116A) and said areas of said first semiconductor thin film (106); forming a second residual insulation film on said first semiconductor thin film; forming a second non-single crystalline semiconductor thin film (114) containing impurities of the first conductive type on said second residual insulation film; causing a solid phase epitaxial growth at said amorphous regions in said second semiconductor region (112, 112A, 116, 116A) and said first semiconductor thin film (110) through a heat treatment to single-crystallize said amorphous regions to the same crystalline structure as the single crystal semiconductor layer (104); and forming a metallic electrode on said heat-treated second semiconductor thin film. The following technical effects can be obtained by the fabrication method according to the present invention: (1) Since by implanting an impurity of a first conductive type through a non-single crystalline first semiconductor thin film, for example, amorphous silicon or the like, a second semiconductor region of the first conductive type such as an emitter or the like is formed deeply in a first semiconductor region such as a base or the like, an emitter of homogeneous depth could be formed with good reproducibility through a heat treatment of a comparatively low diffusion temperature or a heat treatment of a comparatively high temperature but a short time period, while avoiding influences due to a first thin residual insulation film (natural silicon oxidized film) being formed inevitably. (2) Since by implanting an impurity of the first conductive type through the first semiconductor thin film of amorphous silicon or the like, a first residual insulation thin film (natural silicon oxidized film) formed between said first semiconductor thin film and the single crystalline first semiconductor region such as the base or the like could be destroyed, the ohmic contact between the first semiconductor thin film recrystallized into single crystal and serving as an emitter and the second semiconductor region could be improved thereby to reduce the series resistance of the emitter. (3) Since the first non-single crystalline semiconductor thin film such as polysilicon can be formed on the first semiconductor region by solid phase epitaxial growth, the thickness of the second semiconductor thin film serving as a lead-out electrode could be formed at will, and furthermore, the following effects can be obtained. Using the barrier height function to minority carriers by the second residual insulation thin film (natural silicon oxidized film) existing between the second semiconductor thin film of the first conductive type (for example, N type) of such as polysilicon or the like and the first semiconductor thin film recrystallized into single crystal and serving as an emitter, the hole current injected from the base into the emitter could be suppressed to some extent, which made it difficult for the holes to arrive directly at a metallic electrode formed on the second semiconductor film. Therefore, the hole current, that is, the base current could be reduced. by positively utilizing the solid phase epitaxial growth, the present invention can increase the current amplification factor of the transistor and stabilizes the value. (4) By the method of the present invention, the high speed characteristic of devices can be accomplished, the reduction of junction capacitance which constitutes the key point thereof will be described below. Although the collector-base capacitance C cb according to the present invention is approximately equal to the value according to the usual polysilicon emitter method, the emitter-base capacity C eb according to the present invention is lowered as compared with that of the usual polysilicon method, and suitable for high speed operation. It is because, in the case of the method according to the present invention, the base can be formed comparatively shallowly, and therefore, the surface impurity density of the base in the emitter periphery can be made small. In other words, since the surface impurity density of the base in the emitter periphery can be made small, the width of the depletion layer of the emitter-base junction can be increased, thereby to reduce the junction capacitance. Furthermore, since the surface impurity density of base in the emitter periphery can be decreased, the emitter-base breakdown voltage BVebo can be increased easily, which helps to prevent the deterioration in the reliability of bipolar transistors. BRIEF DESCRIPTION OF THE DRAWINGS These and other objects and features of the present invention will become apparent from the following description taken in conjunction with the preferred embodiment thereof with reference to the accompanying drawings, in which: Fig. 1 is a sectional view showing the first process of the manufacturing method for the essential parts of the bipolar NPN transistor in a first preferred embodiment of the present invention; Fig. 2 is a sectional view showing the second process of the manufacturing method for the essential parts of the bipolar NPN transistor in the first preferred embodiment of the present invention; Fig. 3 is a sectional view showing the third process of the manufacturing method of the bipolar NPN transistor in the first preferred embodiment of the present invention; Fig. 4 is a sectional view showing the fourth process of the manufacturing method for the essential parts of the bipolar NPN transistor in the first preferred embodiment of the present invention; Fig. 5 is a sectional view showing the first process of the manufacturing method for the essential parts of the bipolar NPN transistor in a second preferred embodiment of the present invention; Fig. 6 is a sectional view showing the second process of the manufacturing method for the essential parts of the bipolar NPN transistor in the second preferred embodiment of the present invention; Fig. 7 is a sectional view showing the third process of the manufacturing method for the essential parts of the bipolar NPN transistor in the second preferred embodiment of the present invention; Fig. 8 is a sectional view showing the fourth process of the manufacturing method for the essential parts of the bipolar NPN transistor in the second preferred embodiment of the present invention; Fig. 9 is a sectional view showing the fifth process of the manufacturing method for the essential parts of the bipolar NPN transistor in the second preferred embodiment of the present invention; Fig. 10 is a sectional view showing the first process of the manufacturing method for the essential parts of the bipolar NPN transistor in a third preferred embodiment of the present invention; Fig. 11 is a sectional view showing the second process of the manufacturing method for the essential parts of the bipolar NPN transistor in the third preferred embodiment of the present invention; Fig. 12 is a sectional view showing the third process of the manufacturing method for the essential parts of the bipolar NPN transistor in the third preferred embodiment of the present invention; Fig. 13 is a sectional view showing the fourth process of the manufacturing method for the essential parts of the bipolar NPN transistor in the third preferred embodiment of the present invention; Fig. 14 is a sectional view showing the first process of the manufacturing method for the essential parts of the bipolar NPN transistor in a fourth preferred embodiment of the present invention; Fig. 15 is a sectional view showing the second process of the manufacturing method for the essential parts of the bipolar NPN transistor in the fourth preferred embodiment of the present invention; Fig. 16 is a sectional view showing the third process of the manufacturing method for the essential parts of the bipolar NPN transistor in the fourth preferred embodiment of the present invention; Fig. 17 is a sectional view showing the fourth process of the manufacturing method for the essential parts of the bipolar NPN transistor in the fourth preferred embodiment of the present invention; Fig. 18 is a sectional view showing the fifth process of the manufacturing method for the essential parts of the bipolar NPN transistor in the fourth preferred embodiment of the present invention; Fig. 19 is a diagram showing impurity profile of arsenic diffused from polysilicon into the silicon substrate in the prior art; Fig. 20 is a diagram showing impurity profile of arsenic formed in the silicon substrate by the ion implanting of the prior art; Fig. 21 is a schematic cross-sectional view for showing the emitter portion having been subjected to a final heat treatment according to the first preferred embodiment of the present invention; Fig. 22 is a schematic cross-sectional view similar to Fig. 21 which shows the emitter portion having been subjected to RTA heat treatment according to the second preferred embodiment of the present invention; and Fig. 23 is a graph showing a relation between the emitter resistance and the area of emitter window. DETAILED DESCRIPTION OF THE INVENTION A first preferred embodiment wherein the manufacturing method of the present invention is applied to the manufacture of the essential parts of the bipolar NPN transistor will be described with reference to Figs. 1 to 4. As shown in Fig. 1, on a P-type single crystal silicon semiconductor substrate 100, a N-type buried layer 102 was formed so as to form a N-type epitaxial semiconductor layer 104. On this semiconductor layer 104, a silicon oxide film 108 of about 120 nanometer as an insulation film was formed, and boron of (1 to 3) X 10 13 /cm -2 was implanted by low energy ion implanting, and further, a P-type semiconductor region 106 as a base (a first semiconductor region) was formed by a heat treatment of about 850°C. As shown in Fig. 2, after forming an opening through etching of the oxide film 108 at the position where an emitter is to be formed by an usual photo-mask process, an amorphous silicon thin film 110 of about 35 nanometer as a first semiconductor thin film was deposited, arsenic of 1 X 10 15 to 1 X 10 16 /cm -2 was ion implanted through the amorphous silicon thin film 110 with acceleration energy of 60 to 100 KeV so as to form a N-type semiconductor region (a second semiconductor region) as an emitter. At this time, a natural oxide film (a first residual insulation film; not shown) of about 1 nanometer formed between the epitaxial semiconductor layer 104 and the amorphous silicon thin film 110 as a first semiconductor thin film was destroyed by the ion implantation, and at the same time, the N-type semiconductor region 116 scheduled as an emitter (a second semiconductor region) was transformed into amorphous structure. As shown in Fig. 3, a polysilicon thin film 114 of about 250 nanometer as a second semiconductor thin film was deposited on the amorphous silicon semiconductor thin film 110. In this case, a natural oxidized film (a second residual insulation film; not shown) of about 1 nanometer was formed between the amorphous silicon thin film 110 and the polysilicon thin film 114. After arsenic ion implantation of 8 X 10 15 /cm -2 into the polysilicon thin film 114 with an acceleration energy of 50 KeV, a n-type semiconductor region 116 as an emitter of about 180 nanometer was formed by a heat treatment of about 850°C and 30 min. Furthermore, the junction depth of the p-type semiconductor region 106 as the base became about 300 nanometer. At this time, the amorphous portion in the N-type semiconductor region 116 and the amorphous silicon thin film 110 in contact therewith are transformed by the solid phase epitaxial growth into a semiconductor region of a single crystal 116, a silicon thin film of single crystal 110A and a polysilicon thin film 110B. As shown in Fig. 4, after forming an electrode 114 of polysilicon film pattern by the photomask process, an aluminum electrode 118A or the like was formed by the usual manufacturing method. In observing the state of the emitter portion subjected to the final heat treatment with a transparent electron microscopy (TEM), silicon oxides transformed in "ball up" shape (destroyed first residual insulation film) were observed on the boundary between the first N-type semiconductor region 116 implanted with As ion as the emitter and the first silicon thin film of 35 nanometer, and further, the second silicon semiconductor thin film 114 of polysilicon state was observed on the first silicon film 110 transformed into single crystal. Although the first silicon semiconductor thin film 110 of 35 nanometer was amorphous at the time of depositing, in the final state, it was aligned to the silicon substrate ( the semiconductor layer 104 where the base was formed) and recrystallized into single crystal state. This recrystallization was accomplished by the fact that by As ion implanting into the emitter, the silicon oxide film (the first residual insulation film) was destroyed, with the most parts of the emitter region (the second semiconductor region) formed in the silicon substrate being simultaneously changed into amorphous states, a solid phase epitaxial growth took place from the silicon substrate of single crystal state increasingly by subsequent heat treatments, and the second semiconductor region of amorphous state in the silicon substrate and the first silicon semiconductor thin film of amorphous state were sequentially transformed into single crystals. Technical merits due to the steps according to the present invention can be enumerated as follows. In the first place, by implanting an impurity of a first conductive type through a first semiconductor thin film 110 of amorphous state (for example, amorphous silicon or multi-crystal silicon), a second semiconductor region 116 of the first conductive type for such as an emitter could be formed deeply in a first semiconductor region 106 for such as a base, whereby an emitter of homogeneous depth could be formed with good reproducibility through a heat treatment of a comparatively low diffusion temperature or that of a comparatively high temperature and short time period while eliminating the influence of a first residual insulation thin film (natural oxidized silicon film). In the second place, since the first residual insulation thin film produced between this first semiconductor thin film 110 and the first semiconductor region 106 of single crystal such as the base could be destroyed by ion implanting the impurities of the first conductive type through the first semiconductor thin film 110 of such as amorphous silicon, the ohmic contact between the first semiconductor thin film 110 recrystallized into single crystal as the emitter and the second semiconductor region 116 could be improved, thereby to reduce the series resistance of the emitter. In the third place, since the second semiconductor thin film 114 of such as polysilicon could be formed on the first semiconductor thin film 110 of single crystal by the solid phase epitaxial growth, the thickness of the second semiconductor thin film for the lead-out electrode could be formed in a desired thickness at will. In the fourth place, the barrier potential height function for blocking the minor carriers is realized by the silicon oxide film (the second residual insulation film) not in "ball up" shape existing on the boundary between the first silicon semiconductor thin film 110 of single crystal and the second silicon film 114 of polysilicon. By this silicon oxide film, the base current is reduced and thereby, the current amplification factor is improved. Since the deep emitter of a good crystallinity is large in respect of the total amount(Gammel number) of atoms of impurities (As) activated or ionized in the emitter portion, it tends to reduce the base current, and by the barrier height function of the silicon oxide film existing on the boundary between the first silicon semiconductor thin film 110 and the second silicon film 114 of polysilicon, a larger current amplification factor can be obtained as compared with the common polysilicon emitter. In the fifth place, by the method according to the present invention, the reduction of the junction capacitance which constitutes one of the necessary points for achieving the high speed characteristic of devices can be realized. Although the collector-base capacitance Ccb according to the present invention is nearly equal to the value obtained by the usual polysilicon emitter method, the emitter- base capacity C eb obtained thereby is reduced as compared with that by the usual polysilicon emitter method and adapted for the high speed operation. It is because the method according to the present invention enables the base to be formed comparatively deeply, and therefore, the surface impurity density of the base at the emitter periphery can be decreased. Namely, since the surface density of the base at the emitter periphery can be decreased lowered, the emitter-base breakdown voltage BVebo can be easily increased, which helps to prevent the deterioration of the transistor reliability. Furthermore, the features of the present invention to be noted in the manufacture will be described below. When an amorphous silicon film is used as the first semiconductor thin film 110, the channeling phenomenon of As ion at the time of ion implanting onto the emitter can be held lower than in the case of polysilicon film and thereby, the depth of the emitter region implanted can be homogenized, resulting in an improvement in suppressing the fluctuation of the electrical characteristic. When amorphous film is deposited as the first semiconductor thin film, since the growth rate of the film at the time of depositing is smaller as compared with that of a polysilicon film, a good reproducibility with less unevenness of the film thickness between trial manufacture batches can be obtained. However, even when variations of the film thickness take place between trial manufacture batches, if the deposit film thickness is monitored, the variation of the characteristic can be withheld by hanging the acceleration energy for As ion implanting onto the emitter Furthermore, although a NPN transistor according to the usual polysilicon emitter method was simultaneously made upon trial basis through a heat treatment of 900°C, the transistor made through the heat treatment of 900°C according to the present invention showed a better reproducibility of the current amplification factor. By a heat treatment of less than 900°C, it is difficult to form with a good reproducibility an emitter by the usual polysilicon emitter method because of the instability of the film thickness of the natural oxide film corresponding to the first residual insulation film. In the processes of the present invention, there are points to be improved when a further high speed performance of the transistor characteristic ia aimed at. For example, in the process of forming the first semiconductor region in the first single crystal semiconductor layer of the first conductive type, the method of forming the first semiconductor region of the second conductive type as a base in said semiconductor layer can be adopted by ion implanting of the impurities of the second conductive type through the first semiconductor thin film of non-single crystal. In this case, since the base and the emitter can be formed self-aligned by ion implanting the impurities of As and boron through the same first semiconductor thin film, the reproducibility and controllability of the base width (the difference between base depth and emitter depth) are improved. Namely, the first semiconductor thin film having been non-single crystalline (amorphous or polysilicon) originally exhibits the following structural features in the heat treatment. Although it is apt to be single-crystallized in a low temperature heat treatment, the single-crystallized first semiconductor thin film is poly-crystallized in a high temperature but short heat treatment such as RTA. Generally speaking, it is difficult to observe that the semiconductor film once single-crystallized is poly-crystallized in a high temperature heat treatment. However, the first semiconductor thin film can be poly-crystallized after single-crystallization thereof. This seems to be based on the fact that the crystalline state of the first semiconductor thin film is essentially unstable because a solid phase epitaxial growth is caused from the single crystalline substrate via the silicon oxide deformed into "ball up" shape (destroyed first residual insulation film). Thus, it is considered that an upper portion of the single-crystallized first semiconductor thin film in contact with the poly-crystalline second semiconductor thin film is single-crystallized under influences thereby when subjected to a high temperature heat treatment such as RTA. As described above, by the method according to the present invention, a vertical type NPN transistor of an improved current amplification factor was formed, and a narrow base structure of about 120 nanometer base width which is excellent in the high speed performance was obtained. By further increasing the acceleration energy for the As ion implantation, the emitter can be formed more deeply so as to realize a high speed structure of about 100 nanometer base width. In this manner, by ion implanting As through the first semiconductor thin film as an emitter, an emitter of a desired depth could be formed at a comparatively low diffusion temperature, while eliminating the series resistance due to the natural oxide film. Subsequently, a second preferred embodiment wherein the method of the present invention is applied to the manufacturing method for a bipolar NPN transistor will be described with reference to Figs. 5 to 9. Referring to Fig. 5, after forming a N-type buried layer 102 on a P-type single crystal silicon semiconductor substrate 100, an N-type epitaxial semiconductor layer 104 was formed. A P-type element isolation region 105 was formed, and after forming a silicon oxide film 108 of about 120 nanometer as an insulation film, boron of (1 to 3) X 10 13 cm -2 dose amount was selectively injected into the semiconductor layer 104 by ion implanting so as to form a P-type semiconductor region 106 as the base (a first semiconductor region), and further, similarly, phosphorus P of 5 x 10 13 cm -2 dose amount was selectively injected into the semiconductor layer 104 by ion implanting so as to form an N-type semiconductor region 107 as a collector lead-out region, and the semiconductor regions 106 and 107 were diffused through a heat treatment of about 900°C. At this stage, an opening for a base and an opening for an emitter were formed in the oxide film 108 on the P-type semiconductor region 106, and at the same time, after forming an opening for a collector on the N-type semiconductor region 107 as a collector lead-out region, an amorphous silicon thin film 110 (a first semiconductor thin film) of about 35 nanometer thickness was deposited all over the surface. By ion implanting As of 1 X 10 15 to 1 X 10 16 cm -2 with an acceleration energy of 60 to 100 KeV with a photoresist 130 as a mask and through the amorphous silicon thin film 110, a N-type semiconductor region 112A (a second semiconductor region) as an emitter and an N-type semiconductor region 112B as a collector lead-out region were formed. In this case, the natural oxide film of about 1 nanometer thickness (a first residual insulation film; not shown) formed between the epitaxial semiconductor layer 104 and the amorphous silicon thin film 110 as a first semiconductor thin film was destroyed by the ion implanting, and at the same time, most of the n-type semiconductor region 112A as the emitter was changed into amorphous state. As shown in Fig. 6, after depositing polysilicon thin film 114 (a second semiconductor thin film) of about 250 nanometer thickness on the amorphous polysilicon 110, resist patterns 132A, 132B, and 132C were respectively formed on the polysilicon thin film 114 deposited on the base opening, emitter opening and collector opening. At this time, a natural oxide film (a second residual insulation film;not shown) of about 1 nanometer thickness was formed between the amorphous silicon thin film 110 and the polysilicon thin film 114. As shown in Fig. 7, after masking resist patterns 132A, 132B, and 132C (not shown) and patterning the polysilicon thin film 114 and the like, resist patterns 132A, 132B and 132C were removed, and then,a resist pattern 134 was formed by a photomask process,and using this pattern as a mask, As of 8 X 10 15 cm -2 was ion implanted with an acceleration energy of 50 KeV into the polysilicon thin film 114A and 114B. As shown in Fig. 8, a resist pattern 136 was formed by the photomask process, and with this as a mask, boron of 8 X 10 15 cm -2 was ion implanted with an acceleration energy of over 100 KeV for deeper implanting through the polysilicon thin film 114C. As shown in Fig. 9, through a diffusion furnace heat treatment of about 850°C and 30 min. and further though a RTA heat treatment of about 1000°C and 10 sec. a P-type semiconductor region 120 of about 200 nanometer depth was formed, and at the same time, an N-type semiconductor region 112A as the emitter of about 200 nano-meter depth, and a N-type semiconductor region 112B as the collector lead-out region were diffused. At this time, the amorphous portion of the N-type semiconductor region 112A and the amorphous silicon thin film 110A in contact therewith were transformed by the solid phase epitaxial growth into a single crystal semiconductor region 116A and single crystal silicon thin films 110a, 110b, and 110C. As described above, by the method according to the present invention, a similar effect to that of the first preferred embodiment was obtained. For example, by ion implanting As or the like through the first semiconductor thin film 110 as the thin film of amorphous silicon or the like for the emitter lead-out electrode, a homogeneous emitter of a desired depth could be formed with a low series resistance through a first heat treatment of a comparatively low diffusion temperature (700 to 890°c) and a second heat treatment of a comparatively high temperature 900 to 1100°C) and a short time (5 sec.to several min.), and the polysilicon base lead-out electrode could be also simultaneously formed homogeneously and at a low series resistance. The RTA heat treatment is characterized in that, since it is of a short time, the diffusion in semiconductor regions such as emitter and the like including impurity atoms ion-implanted is withheld, which is suitable for forming a very shallow junction, and that since it is of a high temperature heat treatment, the electrical activation rate of impurity atoms in the emitter semiconductor region is facilitated so as to reduce the electric resistance of the semiconductor region, thereby advantageously reducing the emitter resistance. Furthermore, since the improvement in the electric activation rate of the impurity atoms in the emitter semiconductor region means an increase in Gammel number, it leads to a reduction of the base current, resulting in an increase of the current amplification factor and an improvement of the transistor performance. Similarly, RTA advantageously reduces the electrical resistance (sheet resistance) of the second semiconductor thin film 114, contributing to reduction of the resistance of the emitter electrode. However, according to the result of the experiment regarding RTA by the present applicant et all., when the heat treatment temperature of RTA exceeds 1100°C, there is caused a trouble that the diffusion in the semiconductor regions such as the emitter and the base become too large to form a junction of a proper depth. Accordingly, RTA as the second heat treatment is required to be conducted at a temperature of more than 900°C (for example, 920°C) and less than 1100°C. In this case, the first heat treatment is desirably conducted at a temperature lower than that for the second heat treatment and at which the solid phase epitaxial growth takes place. In observing the state of the emitter portion after the RTA heat treatment of 1050 to 1100°C with a TEM, as shown in Fig. 22, silicon oxides 200 ( destroyed first residual insulation film) transformed into "ball up" shape were found on the boundary between the N-type second semiconductor region 116 as the emitter implanted with As ions and the first silicon semiconductor thin film 110 of 35 nanometer thickness. Furthermore, on the first silicon semiconductor film 110A nearly transformed into single crystal, there was seen the second silicon semiconductor thin film 114 remaining in the polysilicon state. The first silicon semiconductor thin film 110 of 35 nanometer which was amorphous at the time of depositing was, in the state after RTA heat treatment, oriented to the silicon substrate and transformed into single crystal on the side of the silicon substrate for the first semiconductor thin film ( the semiconductor layer 104 wherein the base is formed), but on the second semiconductor thin film side of the first semiconductor thin film 110, a polysilicon portion continued from the second semiconductor thin film was observed. Furthermore, as is known conventionally, the natural oxide film (in the case of the present embodiment, the second residual insulation film) existing on the boundary between the single crystal semiconductor (in the present embodiment, the first semiconductor thin film 110 transformed into single crystal) and the polysilicon thin film formed thereon (in the present embodiment, the second semiconductor thin film) was destroyed by RTA heat treatment of a comparatively high temperature, and clear traces thereof were difficult to be observed. One generally known example of the epitaxial growth on the emitter potion is understood as the following phenomenon. the solid phase epitaxial growth taking place between the single crystal substrate (base region) and the polysilicon thin film for the emitter is such that the pillar shaped single crystal region grown up from the single crystal substrate breaks through part of the boundary residual insulation film so as to produce a large number of pillar-shaped single crystal regions of several tens to several hundreds nanometer height. The problems of this phenomenon are that the diffusion of As or the like from the polysilicon thin film to the original single crystal substrate is hinder, whereby the junction depth of the emitter becomes unevenly shallow and the Gammel number is decreased, and that the boundary residual insulation film is destroyed,whereby the barrier height function is lowered. In the case of a shallow emitter of a small Gammel number, the effect on barrier height is larger than that for a shallow emitter of a large Gammel number and the contribution to the increase of the current amplification ratio is larger. For this reason, when the solid phase epitaxial growth takes place in the ordinary polysilicon emitter, the current amplification factor is reduced to a large extent by the synchronous effect of the decrease of Gammel number and the decrease of the barrier height function. However, in the method of the present invention, when RTA is conducted after the usual low temperature heat treatment for the solid phase epitaxial growth, the situation is different from the generally known case and on the contrary, a phenomenon of polysiliconizing (growth of polysilicon film) from the second semiconductor thin film of polysilicon into the single-crystallized first semiconductor thin film is present. Furthermore, this polysiliconizing is confirmed to be stopped approximately in the first semiconductor thin film. This is considered to be due to the fact that silicon oxides changed into "ball up" shape (destroyed first residual insulation film) hinder this polysiliconizing. As described above, in the method of the present invention, in the case of a heat treatment of a high temperature and a short time such as RTA, although the second residual insulation film is almost destroyed with the barrier height function being eliminated, the electrical activation of As impurity atoms in the emitter portion preliminarily ion-implanted deeply into the semiconductor layer is improved with gammel number of the emitter being increased. It is one of the features of the present invention that since the increase of Gammel number compensates the decrease of the barrier height function, the decrease in the current amplification factor is difficult to take place. Furthermore, since the polysiliconizing is almost stopped in the first semiconductor thin film, the homogenity of the emitter portion is better as compared with the usual polysilicon emitter and the fluctuation in the current amplification ratio is less. Referring to Fig. 21, the emitter portion having been subjected to a final heat treatment according to the first preferred embodiment of the present invention is shown. Referring to Fig. 22 the emitter portion having been subjected to RTA heat treatment according to the second preferred embodiment of the present invention is shown. In Figs. 21 and 22, reference numeral 110A is a single crystallized first silicon film for the emitter region, reference numeral 114 is a second polysilicon film, reference numeral 116 is an n + substrate for the emitter region, reference numeral 200 is a balled up oxide and reference numeral 201 is a second oxide layer. In Table 1, there is shown a variety of the current amplification ratio of the transistors formed on one silicon wafer. The dispersion (3σ/h FE ) of the current amplification ratio of the NPN transistor fabricated according to the present invention was 45%, 36% and 29% depending on the heating conditions at 800°C, 850°C and 900°C, respectively. When the RTA heat treatment at 1050°C for ten seconds was made in addition to the low temperature heat treatment at 800°C or 850°C, it was desirably reduced to 38 % or 14 %. Temperature of heat treatment No RTA No RTA 800°C 45% 38% 850°C 36% 14% 900°C 29% --- Further, according to Fig. 23 showing the dependency of emitter resistance on the area of emitter window, the emitter resistance is reasonably reduced to a practically usable value by the heat treatment at 850°C and for 30 minutes though it is still large by the heat treatment at 800°C for 30 minutes. Also, it was observed that the emitter resistance is reduced reasonably by the heat treatment at 900°C and, when RTA was made after the heat treatment at 800°C or 850°C, it is also reduced to the same level as the heat treatment at 900°C. It is to be noted here that so long as the objects of the present invention are accomplished,the order of the heat treatments such as RTA and so on may be changed properly and many times of heat treatment may be added. A third preferred embodiment wherein the method of the present invention is applied to the manufacturing method for the essential parts of the bipolar NPN transistor will be described below with reference to Figs. 10 to 13. As shown in Fig. 10, an N-type buried layer 102 was formed on a P-type single crystal silicon semiconductor substrate 100, thereby to form an n-type epitaxial semiconductor layer 104 thereon. On said single crystal semiconductor layer 104, a thick silicon oxidized film 108 of about 120 nanometer as an insulation film was formed, and by ion-implanting boron of 1 to 3 X 10 13 cm -2 dose amount into the semiconductor layer 104 with a low acceleration energy, and further by a heat treatment of about 900°C, a P-type semiconductor region 106 as a base (a first semiconductor region) was formed. As shown in Fig. 11, after forming an opening by etching the oxide film 108 at the portion scheduled for an emitter by the usual photomask process, As of 1 X 10 15 to 1 X 10 16 cm -2 dose amount was ion-implanted through this opening with an acceleration energy of 20 to 40 KeV so as to form an N-type semiconductor region 109 as an emitter (a third semiconductor region) in an N-type semiconductor layer. After depositing an amorphous first semiconductor thin film 110 on the opening, by ion implanting As of 1 x 10 15 to 1 x 10 16 cm -2 with an acceleration energy of 40 to 80 KeV through the amorphous silicon thin film 110, an N-type semiconductor region 116 as a part of an emitter is formed in the N-type semiconductor region 109 as the second semiconductor region. At this time, a natural oxidized film (a first residual insulation film; not shown) of 1.5 to 2 nanometer thickness formed between the epitaxial semiconductor layer 104 and the amorphous silicon thin film 110 as a first semiconductor thin film was destroyed by the ion implanting, and at the same time, the N-type semiconductor region 116 (a second semiconductor region) as a part of an emitter was mostly transformed into amorphous state. As shown in Fig. 12, on the amorphous silicon semiconductor thin film 110, a polysilicon thin film of about 250 nanometer as the second semiconductor thin film was deposited. At this time, a natural oxidized film (a second residual insulation film; not shown) of about 1 nanometer was formed between the amorphous silicon thin film 110 and the polysilicon thin film 114. After ion implanting As of 8 X 10 15 cm -2 into this polysilicon thin film 114 with an acceleration energy of 50 KeV, a N-type semiconductor region 109 of about 200 nanometer depth as an emitter was formed through a heat treatment of about 900°C and 30 min.. At this time, the junction depth of the P-type semiconductor region as the base became about 350 nanometer. through this heat treatment, the amorphous portion of the N-type semiconductor region 116 and the amorphous silicon thin film 110 in contact therewith were transformed by the solid phase epitaxial growth into the single crystal semiconductor region 116, the single crystal silicon thin film 11A and the polysilicon thin film 110B. As shown in Fig. 13, after forming an electrode 114 of polysilicon film pattern by the photomask process, an aluminum electrode 118A and so on were formed by the usual manufacturing method. In observing the state of the emitter portion after the final heat treatment with a TEN microscope, silicon oxides transformed into "ball up" shape (destroyed the first residual insulation film) were seen on the boundary between the N-type second semiconductor region as the emitter implanted with As ions and the first silicon semiconductor thin film of 35 nanometer. Furthermore, on the first silicon semiconductor film 110A of almost single crystal, the second silicon semiconductor thin film 114 remaining in the polysilicon state was seen. Although the first silicon semiconductor thin film 110 was amorphous at the time of depositing, in the final state, it was aligned with the single crystal silicon substrate (the semiconductor layer 104 to the base formed thereon) and transformed into single crystal. This recrystallization was accomplished by the fact that by ion implanting As into the emitter, the boundary silicon oxide film (the first residual insulation film) was destroyed, and at the same time, the most of the region as part of the emitter (the second semiconductor region) formed in the silicon substrate was transformed into amorphous state, a solid phase epitaxial growth takes place from the single crystal silicon substrate side by the subsequent heat treatment, and the second semiconductor region 116 of amorphous state in the silicon substrate and the first silicon thin film 110 of amorphous state were sequentially transformed into single crystal state. The potential barrier height function for hindering minor carriers according to the method of the present invention is realized by both of the singe-crystallized first silicon semiconductor thin film 110A and the silicon oxide film (the second residual insulation film) not formed in "ball up" shape which is present on the boundary of the second silicon film 114 of polysilicon state. By this silicon oxidized film, the base current is reduced, thereby the current amplification factor being improved. In a good crystallinity deep emitter, since the impurity activation of the emitter portion or the total number (Gammel number)of ionized impurity atoms (As) is large, it is easy to reduce the base current, and by the barrier height function of the silicon oxide film (residual insulation film) present on the boundary between the first silicon semiconductor film and the second silicon semiconductor thin film of polysilicon type, the base current is further reduced. Accordingly, a larger current amplification factor may be obtained as compared with the usual polysilicon emitter. Furthermore, according to the method of the present invention, it is easy to control the base width, namely, the difference between the base depth and the emitter depth which determines the performance of the bipolar NPN transistor. The first semiconductor region as the base is, in many cases, formed by ion implanting. In this case, according to the method of the present invention, the third semiconductor region which determines the emitter depth is also formed by ion implanting. Since the ion implanting is better than the method of forming an emitter from a semiconductor thin film of such as polysilicon in respect of the depth controllability, according to the method of the present invention, the base width (difference between the base depth and the emitter depth) may be easily controlled. Furthermore, when a thin film of two-layered constitution composed of a semiconductor thin film of such as polysilicon and a conductive thin film of such as metallic silicide (tungsten silicide, molybdenum silicide) is adopted in place of the second semiconductor thin film, the resistance of the emitter electrode may be advantageously reduced. Furthermore, in the case where the Gammel number of the emitter is sufficiently large, since it becomes unnecessary to block the base current by the barrier height function of the thin second residual insulation film (natural silicon oxidized film), the emitter resistance may be sufficiently reduced due to the double-layered thin film, resulting in an advantageous improvement. The features of the present invention to be noted in the manufacture will be described below. In the first place, as method to be improved regarding the process of the solid phase epitaxial growth, the following method may be mentioned. For example, although As ion is implanted through the first silicon semiconductor thin film 110 to form an amorphous region, the method for forming an amorphous region by implanting ions such as silicon, germanium or argon which does not determine the conductive type of the semiconductor before or after As ion implanting may be also adopted. Furthermore , when an amorphous region is formed by implanting, immediately before As ion implanting, ions which do not decide the conductive type of the semiconductor, the channelling of As ions implanted immediately thereafter may be advantageously prevented. Furthermore, when an amorphous film is used as the first semiconductor thin film, since the growth rate of the film at the deposition is smaller as compared with a polysilicon film, a good reproducibility of less film thickness fluctuation between batches of trial manufacture can be obtained. Furthermore, if there is no problem of the film thickness control, a semiconductor thin film of such as polysilicon may be employed as the first semiconductor thin film. When a polysilicon thin film is used, since a silicon semiconductor thin film transformed into amorphous state due to the damage by the implanted ions is obtained when implanting As or the like for forming the emitter, the solid phase epitaxial growth is not hindered. As described above, according to the method of the present invention, a vertical NPN transistor wherein the current amplification factor was increased was formed, and a narrow base structure of about 150 nanometer base width with excellent high speed performance was obtained. By further increasing the acceleration energy for As ion implanting, the emitter can be made more deep, realizing a high speed structure of about 100 nanometer base width. As described hereinabove, by implanting As ions through the first semiconductor thin film constituting part of the emitter, while removing the effect of the series resistance of the natural oxidized film, an emitter of a desired depth could be formed with good reproducibility through a heat treatment of a comparatively low diffusion temperature (or a heat treatment of a high temperature and a short time). Furthermore, the method of the present invention may be applicable to the formation of the polysilicon electrode at the opening for the base contact, as in the second preferred embodiment. Namely, in Fig. 5, if a process of ion implanting such as boron into the semiconductor region constituting the P-type base selectively the first semiconductor thin film 110 on the opening for the base, the contact resistance of the contact portion may be reduced, while being homogenized. Subsequently, a fourth preferred embodiment wherein the method of the present invention is applied to the manufacturing method for the bipolar NPN transistor will be described below with reference to Figs. 14 to 18. As shown in Fig. 14, after forming an N-type buried layer 102 on a single crystal semiconductor substrate 100, an N-type epitaxial semiconductor layer 104 was formed. After forming a P-type element isolation region 105 and a silicon oxide film 108 of about 120 nanometer, by selectively implanting boron of 1 to 3 x 10 13 cm -2 dose amount into the semiconductor layer 104 so as to form a P-type semiconductor region 106 constituting a base (a first semiconductor region), and similarly by selectively implanting P of 5 X 10 15 cm -2 dose amount into the semiconductor layer 104 so as to form an N-type semiconductor region 107 constituting the collector lead-out region, and said semiconductor regions 106 and 107 were diffused through a heat treatment of about 900°C. Then, after forming a base opening and an emitter opening on the P-type semiconductor region 106 and a collector opening on the N-type semiconductor region 107 constituting the collector lead-out region, by implanting As of 1 X 10 15 to 1 X 10 16 cm-2 dose amount through these openings, an N-type semiconductor region 109 (a third semiconductor region) constituting part of an emitter and a N-type semiconductor region 109B constituting a collector lead-out portion were formed. And by depositing an amorphous silicon thin film of about 35 nanometer all over the surface and employing a photoresist as a mask, As of 1 X 10 15 to 1 X 10 16 cm -2 was implanted through the amorphous first silicon thin film 110 with an acceleration energy of 60 to 80 KeV so as to form an N-type semiconductor region 116A (a second semiconductor region) constituting part of an emitter and a N-type semiconductor region 116b constituting a collector lead-out region. At this time, the natural oxidized film (a first residual insulation film; not shown) of 1.5 to 2 nanometer formed between the epitaxial semiconductor layer 104 and the amorphous silicon thin film 110 constituting the first semiconductor thin film was destroyed by the ion implanting and at the same time, most of the surface side portions of the N-type semiconductor regions 116A and 116B were changed into amorphous state. As shown in Fig. 15, after depositing a polysilicon thin film 114 of about 250 nanometer on the polysilicon film 110, on the polysilicon thin film 114 (a second semiconductor thin film) formed on the base opening, emitter opening and collector opening, resist patterns 132A, 132B and 132C were respectively formed. At this time, a natural oxide film of about 1 nanometer (a second residual film; not shown) was formed between the amorphous silicon thin film 110 and the polysilicon thin film 114. As shown in Fig. 16, after patterning the polysilicon thin film 114 and so on with resist patterns 132A, 132B and 132C (not shown) as masks and after, removing these resist patterns 132A, 132B and 132c, a resist pattern 134 was formed by the photomask process, and using this resist pattern 134 as a mask, As of 8 X 10 15 cm -2 was implanted into polysilicon thin films 114A and 114B with an acceleration energy of 50 KeV. As shown in Fig. 17, a resist pattern 136 was formed by the photomask process, and with this as a mask, boron of 8 X 10 15 cm -2 was implanted through the polysilicon thin film 114C with an acceleration energy of more than 100 KeV. As shown in Fig. 18, a P-type semiconductor region 120 of about 200 nanometer was formed by a heat treatment of about 900°C and 30 min., and at the same time, an N-type semiconductor region 109A constituting an emitter of about 200 nanometer depth, and an n-type semiconductor region 109B constituting a collector lead-out region were diffused . At this time, the amorphous portions of N-type semiconductor regions 116A and 116B and the amorphous silicon thin film 110A in contact therewith were transformed by the solid phase epitaxial growth into a single crystal semiconductor region 116A, and the single crystal thin films 110A and 110c. Finally, according to the usual manufacturing method, aluminum electrodes 118A, 118B 118C ,etc. were formed. As described hereinabove, according to the method of the present invention, the same effect as in the third preferred embodiment was obtained. By implanting As, etc. through the first semiconductor thin film of polysilicon for the emitter lead-out electrode and so on, an emitter could be formed at a low series resistance, while eliminating the influence of the natural oxide film. Furthermore, the polysilicon electrode for collector lead-out could be also formed at the same time at the low series resistance. On the other hand, by implanting impurities of the first conductive type through the opening on the first insulation film, a homogeneous emitter of a desired depth could be formed with good reproducibility through a heat treatment of a comparatively low diffusion temperature and a short time. As described above, description was made of the preferred embodiments wherein the method of the present invention was applied to the manufacturing method for the bipolar NPN transistor, the method of the present invention may be also applicable to the case where a semiconductor thin film of such as polysilicon is used for the lead-out electrode of the source or drain of such as MOS transistors. Namely, after forming a well region constituting a first semiconductor region, a source and a drain constituting a second semiconductor region , etc. by ion implanting, by ion implanting impurities constituting part of the source,etc., the residual insulation film (natural oxide film) is destroyed, and further by a heat treatment of such as RTA, the first and second residual insulation films were destroyed, and a miniaturized region for source or the like can be formed homogeneously and at a low resistance. Furthermore, in the general manufacturing method for the bipolar transistor, there is a method which is so arranged that unlike the method of depositing the polysilicon semiconductor thin film for the emitter after forming an emitter opening on the insulation film formed on the base, after depositing the polysilicon semiconductor thin film directly on the base surface with out forming an insulation film on the base, this polysilicon semiconductor film is selectively patterned in the wiring shape thus to form an emitter electrode. The method of the present invention can be applicable to this method in which the polysilicon semiconductor film consists of a first semiconductor film and a second poly-crystallized semiconductor film. Furthermore, the method of the present invention may be also applicable to various semiconductor devices such as hetero-bipolar, or junction type field effect devices employing Si-Ge and the like. According to the method of the present invention, the electric characteristic in the connection between the non-single -crystal semiconductor film used in the transistor or the like in the bipolar type or field effect type circuit, and the semiconductor region containing high density of impurities is improved,whereby a manufacturing method for the semiconductor device having a structure excellent in the high speed performance and high integration may be provided.

Claims: A fabrication method for semiconductor devices comprising the steps of: forming a first residual insulation film on a single crystal semiconductor layer (104) of a first conductive type; forming a first semiconductor region (106) of a second conductive type in said single crystal semiconductor layer (104) prior to or after the formation of said first insulation film; forming a first non-single crystalline semiconductor thin film (110) on the surface of said first residual insulation film; implanting ions of an impurity of the first conductive type, through said first semiconductor thin film (110), into an area of said first semiconductor region (106) to form a second semiconductor region (112, 112A, 116, 116A) of the first conductive type and, by this ion implanting, destroying said first residual insulation film and, at the same time, forming amorphous regions in said second semiconductor region (112, 112A, 116, 116A) and said areas of said first semiconductor thin film (110); forming a second residual insulation film on said first semiconductor thin film; forming a second non-single crystalline semiconductor thin film (114) containing impurities of the first conductive type on said second residual insulation film; causing a solid phase epitaxial growth at said amorphous regions in said second semiconductor region (112, 112A, 116, 116A) and said first semiconductor thin film (110) through a heat treatment to single-crystallize said amorphous regions to the same crystalline structure as the single crystal semiconductor layer (104); and forming a metallic electrode on said heat-treated second semiconductor thin film. The fabrication method according to Claim 1 wherein said first residual insulation film is a thin film formed by natural oxidation on the single crystal semiconductor layer (104) which is silicon. The fabrication method according to Claim 1 or 2 wherein said second residual insulation film is a thin film formed by natural oxidation between the first non-single crystalline thin film (110) which is amorphous silicon, and the second non-single crystalline thin film (114) which is polysilicon. The fabrication method according to Claim 1 wherein said heat treatment comprises a first heat treatment to single-crystallize said first semiconductor thin film (110) via crystallisation of said amorphous regions therein and a second heat treatment of a higher temperature and shorter time than said first heat treatment. The fabrication method according to Claim 4 wherein said second insulation film is destroyed during said second heat treatment and, thereby, said first non-crystalline semiconductor thin film (110) is directly in contact with said second non-single-crystalline semiconductor thin film after said crystallisation process. The fabrication method according to claim 1 further comprising a step of forming a third semiconductor region (109) of the first conductive type in said first semiconductor region (106) said second semiconductor region (116, 1 16A) being formed in said third semiconductor region (109). The fabrication method according to claim 1 wherein the semiconductor devices to be fabricated by the fabrication method are bipolar type semiconductor devices. The fabrication method according to claim 7 wherein the collector of each bipolar type semiconductor device is formed by said semiconductor layer of the first conductive type (104), the base thereof is formed by said first semiconductor region of the second conductive type (106) and the emitter thereof is formed by said second semiconductor region (112, 112A, 116, 116A) after having been single-crystallized.

Inventors: HORI ATSUSHI, KAMEYAMA SHUICHI, SEGAWA MIZUKI, SHIMOMURA HIROSHI, HORI, ATSUSHI, KAMEYAMA, SHUICHI, SEGAWA, MIZUKI, SHIMOMURA, HIROSHI
Applicants: MATSUSHITA ELECTRIC IND CO LTD, MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
Application year: 1991
Main classification: H01L21
IPC codes: H01L21