Second harmonic generator using a laser as a fundamental wave source

Abstract: A second harmonic generator has a semiconductor laser for a fundamental wave light source. The laser includes a semiconductor laser chip (30) and a quasi-phase matching element (50, 150) optically coupled together in series. The semiconductor laser chip (30) can lase utilizing feedback of a light from the quasi-phase matching element (50, 150). The quasi-phase matching element (50, 150) receives a laser beam emitted from the semiconductor laser chip (30) and generates a second harmonic light using the laser beam as a fundamental wave light.

Description: The present invention relates to a light source comprising a semiconductor laser-active structure and a second harmonic generating element arranged to receive light of a fundametal wavelength therefrom. Second harmonic generators are adapted to reduce the wavelength of the output light of a light source by half for the purpose of reduction of the wavelength. Second harmonic generating elements (also termed as SHG elements) are disclosed in E.J. Lim, et al, "Blue Light Generation by Frequency Doubling in Periodically Polled Lithium Niobate Channel Waveguide" Electronics Letters, Vol. 25, No. 11, pp. 731-732 (1989). Referring to FIG. 1, which is a schematic perspective view of a second harmonic generating element, the principle of operation (quasi-phase matching), of the SHG element will be described. In this SHG element, a LiNbO3 substrate 10 has a +C surface in which Ti (titanium) has been thermally diffused periodically with the period of Λ at a diffusion temperature of about 1,100°C for a diffusion time of about one hour to form a domain inversion structure 12, which is a grating-like structure. An optical waveguide 14 is formed by a proton exchange method (Li+ - H+ exchange method) perpendicular to the domain inversion structure 12. As shown in FIG. 1, a fundamental wave of an angular frequency of ω and a wavelength of λ(ω) is introduced from the left into the optical waveguide 14 and propagates therein in an m-th propagation mode (m = 0, 1, 2 ) at an effective guide refractive index, Nn (ω). As is well known, during this propagation a second harmonic of angular frequency 2ω and wavelength λ(2ω) is generated. In other words, a portion of energy of the fundamental wave ω is transferred to the second harmonic 2ω. Now, assuming that no domain inversion region has been formed, the portion of energy of the fundamental wave converted to the second harmonic becomes maximal when the fundamental wave propagates in the optical waveguide 14 by a length 1c (coherence length) given by the following formula: 1c = λ(ω)/[4{Nn(2ω) - Nm(ω)}], wherein Nn(2ω) is the effective guide index for the n-th propagation mode of the second harmonic, and Nm(ω) ) is the effective guide index for m-th propagation mode of the fundamental wave. Hereafter, description will be made of the case where both the fundamental wave and the second harmonic propagate in zeroth (0-th) modes or fundamental modes, i.e., m = n = 0, for simplicity. Here, coherence length 1c depends on the fundamental wavelength λ(ω) and the size of the optical waveguide. When λ(ω) = 860 nanometers (nm) and the thickness of the optical waveguide is of the order of d = 1 micron, the lc is said to be of the order of 1.7 microns or micrometres (µm), see Toshinori Nozawa, et al, "Optical-Device Applications of LiNbO3 Single Crystals" Oyo Butsuri (Applied Physics, Japan), Vol. 59, No. 8, pp. 996-1013 (1990), Table 3). This value was obtained on the assumption that the deviation of the coherence length 1c from a true value would not be so large if the coherence length 1c is calculated from the fact that the guide index n(860) for light having a wavelength of 0.860 micron from LiNbO3 is of the order of 2.1723 and the guide index n(430) for light of a wavelength of 0.430 micron is of the order of 2.2987, see D.S. Smith, et al, "Refractive Indices of Lithium Niobate" Optics Communications, Vol. 17, No. 3, p. 332 (1976), using the value of n(860) as Nm(ω) and the value of n(430) as Nn(2ω). The coherence length 1c being 1.7 means that the intensity of the second harmonic becomes maximal as the fundamental wave propagates in the optical waveguide 14 at a displacement of 1.7 microns, and then becomes 0 (zero) as it propagates by a further 1.7 microns. In other words, the fact that coherence length lc is finite rather than infinite indicates that phase matching between the fundamental wave and the second harmonic is incomplete, and that if the fundamental wave propagates in the optical waveguide 14 over a distance longer than the coherence length 1c, the intensity of the second harmonic will not exceed a certain value. The incomplete phase matching means the presence of phase mis-matching. This phase mis-matching Δk is given by the following formula: Δk = (4π/λ(ω))(N(2ω) - N(ω)). Accordingly, as shown in FIG. 1, a domain inversion region 12 is provided for every coherence length 1c to form a grating-like structure of domain inversion regions 12 at a period of Λ (= 2 lc) so that phase mismatching Δk can be supplemented to enable outputting a second harmonic having an intensity prqportional to substantially a second power of the distance along which the fundamental wave have propagated. The condition, under which the phase mismatching is complete is the following equation: N(2ω) - N(ω) - λ(2ω)/Λ = 0, see, Sasson Somekh, et al, "Phase Matching by Periodic Modulation of Nonlinear Optical Properties" Optics Communications, Vol. 6, No. 3, pp. 301-304 (1972), particularly formula (12) in the literature, for example. Jonas Webjorn, et al, "Fabrication of Periodically Domain-Inverted Channel Waveguides in Lithium Niobate for Second Harmonic Generation" Journal of Lightwave Technology, Vol. 7, No. 10, pp. 1597-1600 (1989) recites this formula as it is. Even when strict phase matching (N(2ω) - N(ω) - λ(2ω)/Λ = 0) is not obtained, the formation of a periodical domain inversion structure which satisfies formula (2) makes it possible to take out a second harmonic (or SH light output) whose intensity is proportional to the second power of the distance of propagation of the fundamental wave, and thus of the length L of the SHG element. However, the condition given by formula (2) is difficult to attain for the following two reasons: (1) Effective guide indices N(2ω) and N(ω) depend on the dimensions of the optical waveguide used and precision of dimension required here cannot be attained sufficiently with the current state of technology; and (2) The precision of the dimension of the period Λ must be 1 nm or less but such precision cannot be attained sufficiently currently. Then, use is made of a dye laser whose wavelength is variable for a light source for fundamental wave in order to satisfy formula (2) so that conversion efficiency can be increased, see E.J. Lim et al, Electronics Letters, Vol. 25, No. 11, pp. 731-732 (1989). However, the use of a dye laser for the light source for fundamental wave leads to increased size of the overall second harmonic generator, and the second harmonic generator using a dye laser for the light source for fundamental wave is of substantially no practical use because a monochromatic laser light is already available by gas laser or the like. EP-A-0322847 discloses a second harmonic wave generating device wherein a second harmonic generator is integrated with a laser light source. Under the circumstances, the present inventors have made various studies and experiments and as a result have now found that a practically useful second harmonic generator can be constructed using a semiconductor laser (hereafter, abbreviated as LD) more compact than the dye laser for the fundamental wave light source and adopting a technology making an oscillation wavelength variable. Therefore, it is an object of the present invention to provide a second harmonic generator which is compact, uses a semiconductor laser for a fundamental wave light source and a second harmonic generating element based on a quasi-phase matching method and can produce a high power, short wavelength laser beam. A light source according to the present invention is characterised in that the fundamental wavelength light is emitted from one end of the laser-active structure to the second harmonic generating element which performs quasi-phase matching to generate light of said second harmonic wavelength, and the resonator of the laser-active structure is defined by the other end of the laser-active structure and a grating comprising refractive index variations in the second harmonic generating element. Here, the quasi-phase matching element may preferably comprises an optical waveguide having a periodical guide. The periodical guide index distribution structure may preferably have a reflection effect on the fundamental wave light. Further, the periodical guide index distribution structure may preferably have a transmission effect on the second harmonic light. The periodical guide index distribution structure may preferably have a period of variation of a guide index satisfying: (i) conditions of quasi-phase matching of the quasi-phase matching element; (ii) conditions of reflection of the fundamental wave light; and (iii) conditions of transmission of the second harmonic light. Preferably, the condition of quasi-phase matching may be: Λ/2 = Lc = (2s-1)λ(ω)/4{N(ω) - N(ω)} wherein s is a positive integer, Λ is a period of variation of the guide index in the periodical guide index distribution structure, Lc is a length by an odd number as large as coherence length of the fundamental light in the quasi-phase matching element, λ(ω) is a wavelength of the fundamental wave light, N(ω) is an effective guide index of the optical waveguide for the fundamental wave light, and N(2ω) is an effective guide index of the optical waveguide for the second harmonic light. The quasi-phase matching element may preferably comprise a LiNbO3 substrate having a +C surface, an optical waveguide formed on the +C surface of the substrate by a Li+ - H+ proton exchange method, and a periodical guide index distribution structure formed in the optical waveguide by Ti diffusion. The quasi-phase matching element may preferably have a first element end capable of introduction and emission of the fundamental wave light, and a second element end capable of introduction and emission of the second harmonic light. In this case, each of the first and second element ends may have a second reflection coating film to keep reflection of the fundamental wave light and the second harmonic light to respective predetermined (low) levels. The second harmonic generator may preferably have a 1/2 wavelength plate inserted between the laser-active structure and the quasi-phase matching element. Preferably, the quasi-phase matching element may be of a planar type or of an optical fiber type. Preferably, the source includes a supply of current for the laser-active structure the current being in a range which does not cause the laser-active structure to lase in the absence of a resonator. The quasi-phase matching element may preferably comprise a crystal substrate having a +C face as a surface, in which the quasi-phase matching element has a first element end on a side of the semiconductor laser chip, the first element end being capable of introduction and emission of the fundamental wave light, and a second element end opposite to the first element end capable of introduction and emission of the second harmonic light, in which the optical waveguide extends between the first and second element ends, the first and second element ends being inclined at interior angles Θ1 and Θ2, respectively, with respect to the +C face, and in which the semiconductor laser chip and the quasi-phase matching element are arranged so that the fundamental wave light can be incident into the optical waveguide at Brewster angle or an angle approximate thereto. The interior angles Θ1 and Θ2 may preferably satisfy Θ1 = Θ2. The crystal substrate may include a substrate layer in which material of the crystal substrate remains unchanged, in which the optical waveguide and the substrate layer define therebetween an interface, the interface being parallel to the +C face; and in which the interior angle Θ1 is set up at a value at which the fundamental wave light and the second harmonic light in the optical waveguide can enter the interface and the +C face at a total reflection angle. Preferably the interior angle Θ1 may satisfy conditions: Θ1 = tan-1 n2; Θ1 > sin-1 (n3/n2) - sin-1 {(1/n2)sin(tan-1 n2)}; and Θ1 < 180° - sin-1 (n3/n2) - sin-1{(1/n2)sin(tan-1 n2)} where 1 is the Brewster angle, n2 is a guide index of the optical waveguide for the fundamental wave light, and n3 is a guide index of the material of the crystal substrate for the fundamental light. The interior angle Θ1 may satisfy an expresion of 49.2° < Θ1 < 83.3°, when the fundamental wave light has a wavelength of 830 nm. The first and second element ends and the +C face may preferably define respective edges parallel to each other. The condition of quasi-phase matching may be Λ/2 = L(ω) = p λ(ω)/4N(ω), where p is a positive integer, Λ is a period of variation of the guide index in the periodical guide index distribution structure, L(ω) is odd times of the coherence length for the fundamental wavelength λ(ω), λ(ω) is a wavelength of the fundamental wave light, and N(ω) is an effective guide index of the optical waveguide for the fundamental wave light. The condition of transmission of the second harmonic light may be Λ/2 = L(2ω) = (2q-1)λ(ω)/8N(2ω) where q is a positive integer, Λ is a period of variation of the guide index in the periodical guide index distribution structure, L(2ω) is odd times of the coherence length for the wavelength λ(2ω) of the second harmonic light, λ(2ω) is a wavelength of the second harmonic light, and N(2ω) is an effective guide index of the optical waveguide for the second harmonic light. The crystal substrate may include a substrate layer in which material of the crystal substrate remains unchanged, in which the optical waveguide and the substrate layer define therebetween an interface, the interface being parallel to the +C face, and in which the interior angle Θ1 is set up at a value at which the fundamental wave light and the second harmonic light in the optical waveguide can enter the interface and the +C face at a total reflection angle. According to the present invention, a semiconductor laser is used instead of a dye laser which has been used conventionally, and light from the laser-active structure is launched into a quasi-phase matching element as a light of a fundamental wavelength, resulting in that a second harmonic of the fundamental wave is emitted from the quasi-phase matching element. Therefore, the whole structure of the second harmonic generator is compacter and smaller than the conventional one using a dye laser. As described above, usually, the quasi-phase matching element includes a substrate and an optical waveguide formed on the surface thereof. In the optical waveguide is formed periodically a domain inversion region. The domain inversion regions thus formed have each a refractive index slightly higher than the remaining part of the optical waveguide. This construction may be deemed as forming a diffraction grating along the direction of optical guiding when the optical waveguide is viewed as a whole. Therefore, the domain inversion regions form a periodical guide index distribution structure. Hence, if a laser-active structure and a quasi-phase matching element are coupled together so that the periodical guide index distribution structure and the end of the laser-active structure opposite to the end, at which the optical connection is made can make an external optical resonator, lasing of the semiconductor chip will take place due to optical feedback from the periodical guide index distribution structure. In this case, if the periodical guide index distribution structure is constructed such that the period of guide index variation, i.e., period of formation of domain inversion regions satisfies the following three conditions: (i) that light of fundamental wave is reflected; (ii) that light of second harmonic is transmitted; and (iii) a quasi-phase matching condition is met, then the amount of light fed back from the periodical guide index distribution structure to the laser-active structure increases, and this fedback light causes lasing. In addition, since the condition of quasi-phase matching is met, the intensity of second harmonic light increases at every coherence length. Furthermore, the second harmonic light is emitted from the quasi-phase matching element in a high power since the second harmonic light is transmitted through the periodical guide index distribution structure. In the case of arrangement in which the light of fundamental wave from the laser-active structure is incident at a first element end of the quasi-phase matching element so that Brewster conditions can be met, there is no fear that light reflected at the first element end serving as both incident and emerging ends will come back to the semiconductor chip, which makes it possible to activate the laser efficiently in the laser-active structure by only the light fed back from the periodical guide index distribution structure in the optical waveguide. Since reflected light is in a negligible amount even at an incident angle near the Brewster angle, it is easy to align the laser-active structure with the quasi-phase matching element. The above and other objects, effects, features and advantages of the present invention will become more apparent from the following description of embodiments thereof taken in conjunction with the accompanying drawings, in which: FIG. 1 is a schematic perspective view of a second harmonic generating element, useful for understanding the principle of operation of the second harmonic generating element; FIG. 2 is a schematic cross sectional view of a second harmonic generator according to one embodiment of the present invention; FIG. 3A is a cross sectional view of a substrate on which an optical waveguide is formed; FIG. 3B is a graph in which correspondingly plotted is an example of the distribution of a guide index of the optical waveguide shown in FIG. 3A; FIG. 4A is a cross sectional view of a substrate on which an optical waveguide is formed, showing domain inversion regions formed in the optical waveguide; FIG. 4B is a graph in which an example of the distribution of a guide index of the optical waveguide having domain inversion regions is correspondingly plotted; FIG. 5 is a graph plotting a guide index-wavelength dispersion characteristics of LiNbO3 used for a substrate in a quasi-phase matching element according to one embodiment of the present invention, with horizontal axis indicating wavelength in microns and vertical axis guide index; FIG. 6 is a graph illustrating a relationship between wavelength of a fundamental wave light (fundamental light) vs. length Lc which is by an odd number as large as coherence length 1c and L(ω), with horizontal axis indicating wavelength in microns and vertical axis L(ω) in microns; FIG. 7 is a graph illustrating a relationship between wavelengths of a fundamental wave light (fundamental light) and of a second harmonic vs. length Lc which is by an odd number as large as coherence length 1c and L(2ω), with horizontal axis indicating wavelength in microns and vertical axis L(2ω) in microns; FIG. 8 is a schematic cross sectional view of a second harmonic generator according to anther embodiment of the present invention, showing an arrangement of an LD chip and an SHG element corresponding to one shown in FIG. 2; FIG. 9 is a schematic perspective view of a second harmonic generating element corresponding to one shown in FIG. 1, illustrating its construction; and FIG. 10 is a schematic perspective view of a quasi-phase matching element in accordance with another embodiment of the present invention. Hereafter, the present invention will be described in greater detail with reference to the attached drawings, in which shapes, sizes and arrangements of components are indicated schematically and emphasized enough to be helpful to understand the present invention. FIG. 2 is a schematic cross sectional view of a second harmonic generator according to one embodiment of the present invention. The second harmonic generator is an apparatus utilizing a semiconductor laser for a fundamental wave light source, and hence the second harmonic generator of the present invention includes a semiconductor chip (hereafter, sometimes referred to simply as LD chip) 30 and a quasi-phase matching element (hereafter, sometimes referred to simply as SHG element) 50 optically connected to one another. This construction permits the quasi-phase matching element 50 to generate and emit a light of second harmonic using a laser beam emitted from the semiconductor laser chip 30 as a fundamental wave light. First, the semiconductor laser chip will be described in greater detail. The semiconductor laser chip 30 includes an active layer 32 which emits a light and serves as an optical waveguide and both radiation ends of the active layer 32 are substantially perpendicular to the direction in which light is guided, and these ends are termed as a first chip end 34 and a second chip end 36. A peripheral semiconductor region around the active layer 32 is indicated by 42. Usually, the semiconductor chip has a coating film formed at the radiation ends thereof so that the radiation ends on which the laser beam is reflected can establish a predetermined reflectivity (for example, about 30 %). For this reason, the semiconductor chip can lase alone without being combined with any quasi-phase matching element unlike the instant embodiment of the present invention. In this case, however, ordinary semiconductor chips used alone for lasing have respective oscillation wavelengths fixed to ones specific to the chips. In the present invention it is required to optically connect the semiconductor laser 30 to the quasi-phase matching element 50 and activate the laser chip for the radiation of a second harmonic at a high power from the element 50 efficiently. In order to achieve this, the semiconductor laser chip 30 is adapted to lase at a wavelength of a fundamental wave light satisfying quasi-phase matching conditions of the quasi-phase matching element 50. Therefore, a usually employed laser chip lasing alone cannot be used for the laser chip 30 in the present invention. Thus, the semiconductor laser chip 30 included in the present invention is used in an operation current range in which no lasing will occur by itself although light emission occurs in the active layer 32. In order to be useful in such an operation current range, according to the present invention, it is preferred that a high reflection coating film (hereafter, sometimes referred to simply as HR coating film) 38 contributing to lasing be provided on the first chip end 34 while on the second chip end 36 be provided a low reflection coating film (hereafter, sometimes referred to simply as AR coating film) 40 which does not contribute to lasing to obtain a construction which will not permit the oscillation of LD chip 30 by itself. Here, the HR and AR coating films 38 and 40 mean that they are highly and lowly reflective, respectively, for both wavelengths of the laser light (fundamental wave light, also referred to simply as fundamental wave or fundamental light) and of the second harmonic (also referred to as SH light) which will be discussed later on. The reflectivity of the HR coating film 38 is desirably 10% in ideal cases but it is suitable that it is as close thereto as possible. On the other hand, the reflectivity of the AR coating film 40 is desirably 0 %. It is also suitable that it is as close thereto as possible. Although precise wavelengths of the fundamental wave light and of SH light are unknown in the step of practicing the coating treatments, it is sufficient to set up respective wavelengths to values so that high reflection and low reflection conditions, respectively, can be satisfied for respective wavelengths of fundamental wave light and of SH light predetermined in the step of designing the quasi-phase matching element 50 discribed later. More strictly, it is sufficient to provide a plurality of LD chips and of quasi-phase matching elements subjected to some kinds of coating treatments satisfying the aforementioned high and low reflection conditions at a wavelength near one predetermined in the step of designing (particularly low reflection condition), arrange them on a proper common substrate, not shown, and integrate them by hybridization, and choose in this stage optimum combinations. Next, description will be made on the quasi-phase matching element. The quasi-phase matching element 50 used in the present invention may basically be of the same construction as the conventional planar type quasi-phase matching element described above. In the instant embodiment, description will be made on the case where there is used a quasi-phase matching element of a planar type. The element 50 has an optical waveguide 54 on a surface of a substrate 52. The optical waveguide 54 has domain inversion regions 56 formed therein periodically in the direction of light guiding. In the embodiment shown in FIG. 2, each domain inversion region 56 is formed in the substrate 52 across the optical waveguide 54. In FIG. 2, regions in which domains are not inverted (domain non-inverted regions) are designated by reference numeral 57. Both ends of the optical waveguide 54, substantially perpendicular to the direction of light guiding, are named a first element end 58 and a second element end 60. In the instant embodiment, preferably the first and second element ends 58 and 60 may be formed with low reflection (AR) coating films 62 and 64, respectively, so that reflection losses can be minimized upon entrance and emission of laser beam. Next, referring to FIGS. 3A and 3B and FIGS. 4A and 4B, discussion will be made on the quasi-phase matching element 50, taking an example in which the substrate 52 for the quasi-phase matching element 50 is made of lithium niobate (LiNbO3). FIG. 3A is a cross sectional view of a substrate on which an optical waveguide is formed, and FIG. 3B is a graph correspondingly plotting the distribution of a guide index of the optical waveguide shown in FIG. 3A. FIG. 4A is a cross sectional view of a substrate on which an optical waveguide is formed, showing domain inversion regions formed in the optical waveguide, and FIG. 4B is a graph also correspondingly illustrating the distribution of a guide index of the optical waveguide having domain inversion regions. First, description will be made on a quasi-phase matching method. It is assumed that a fundamental wave propagates in a material which does not satisfy strict phase matching conditions (here corresponding to the case where SH light is to be obtained from an optical waveguide in a LiNbO3 crystal using a nonlinear optical constant d33). In this case, the intensity of the SH light take a maximum value and a minimum value (= 0) alternately and repeatedly as the fundamental light propagates by every coherence length lc (lc is given by formula (1) above). Hence, if the sign of a polarized wave (second harmonic) generated can be inverted alternately by every coherence length lc by any appropriate method, SH light output can be increased monotonously with respect to distance of propagation of the fundamental light. A phase matching method based on this concept may be said to be a quasi-phase matching method. As described previously, a planar type quasi-phase matching element includes a LiNbO3 substrate 100 on which an optical waveguide 102 is formed by a proton exchange method or the like, FIG. 3A. The guide index of the optical waveguide 102 is higher than that of the substrate 100 itself, and is constant from one end to another of the optical waveguide 102 as plotted with a solid line I in FIG. 3B. The polarized wave described above is induced in a LiNbO3 crystal, particularly, in an optical waveguide formed on +C surface of the LiNbO3, by photoelectric field of the fundamental light. It is known that the sign of the induced polarized wave can be inverted by inverting the domain in the crystal, see E.J. Lim et al, Electronic Letters, Vol. 25, No. 11, pp. 731-732 (1989). On the other hand, as already described above, it is known that the domain inversion region 104 on the +C surface of the LiNbO3 substrate 100 is formed by diffusing Ti at a temperature on the order of 1,100°C, see Shintaro Miyazawa, "Ferroelectric Domain Inversion in Ti-diffused LiNbO3 Optical Waveguide" Journal of Applied Physics, Vol. 50, No. 7, pp. 4599-4603 (1979). However, the Ti diffusion concentration used here is by about 1/10 as low compared with the diffusion concentration of Ti diffused upon the formation of an optical waveguide by diffusion of Ti on the LiNbO3 substrate 100. However, as shown in FIG. 4A, when the domain inversion regions 104 are formed by diffusion of Ti in the optical waveguide 102 in the LiNbO3 substrate 100 in a constant period, the guide index of the domain inversion regions 104 becomes higher, though slightly, than that of the domain non-inversion regions 106, where domains have not been inverted, of the optical waveguide 102 even in a Ti diffusion concentration which will cause domain inversion. The state of variation or distribution of the guide index of the optical waveguide 102 is shown with a solid line in FIG. 4B. Therefore, this periodical domain inversion structure can be deemed as a diffraction grating whose guide index varies in the same period as that of the domain inversion structure. That is, the fundamental light and SH light propagating in the quasi-phase matching element are under optical effects such as reflection or transmission by the diffractive grating. In this sense, it can be said that the periodical domain inversion structure in the quasi-phase matching element constitutes a periodical guide index distribution structure. The second harmonic generator of the present invention has a construction positively utilizing such a periodical guide index distribution structure formed in the optical waveguide. Then, in order to positively utilize the periodical guide index distribution structure, in the instant embodiment of the present invention, the periodical guide index distribution structure is formed as a structure which strongly reflects the fundamental wave, and the HR coating film 38 (the first chip end 34) of the LD chip 30 shown in FIG. 2 and the periodical guide index distribution structure are combined to form an external laser resonator to enable lasing. The oscillation wavelength of the LD chip 30 is unequivocally determined by the period of variation of guide index of the periodical guide index distribution structure 70. If the wavelength of the oscillated light is made equal to the wavelength of the fundamental light of the quasi-phase matching element 50 and the period of variation of guide index (periodical structure) is set up, then the quasi-phase matching element 50 satisfies its quasi-phase matching conditions completely and SH light can be extracted at a high efficiency. Referring to FIGS. 5, 6 and 7, description will be made on the guide index distribution structure. FIG. 5 is a graph illustrating a guide index-wavelength dispersion characteristics of LiNbO3 used as a substrate in the quasi-phase matching element according to the instant embodiment of the present invention, with horizontal axis indicating wavelength in microns and vertical axis guide index. When calculating the guide index-wavelength dispersion characteristics, the following formula after Sellimeier was used, see Optics Communications, Vol. 17, p. 332 (1976): n2(λ) = 4.5820-{0.099169/[(0.044432-λ2)]} - 0,021950λ2 FIG. 6 is a graph plotting a relationship between wavelength of a fundamental wave light (fundamental light) vs. length Lc which is by an odd number as large as coherence length 1c and L(ω), with horizontal axis indicating wavelength and vertical axis L(ω) both in microns. FIG. 7 is a graph in which plotted is a relationship between wavelengths of a fundamental wave light (fundamental light) and of a second harmonic, vs. length Lc which is by an odd number as large as coherence length 1c and L(2ω), ), with horizontal axis indicating wavelength and vertical axis L(2ω) both in microns. In the following description, the guide indices n(ω) and n(2ω) of LiNbO3 are replaced by effective indices N(ω) and N(2ω) of the optical waveguide since the fundamental light and second harmonic propagate in the optical waveguide formed on the substrate. It should be noted that this replacement of guide indices will make no difference in the essence of explanation on the periodical structure. The effective guide indices N(ω) and N(2ω) are guide indices for extraordinary lights since only extraordinary lights can propagate in the optical waveguide formed by the proton exchange method. Here, the direction of vibration of an electric field component of an extraordinary light is substantially perpendicular to the +C surface of the LiNbO3 substrate. In the instant embodiment of the present invention, period Λ of variation of guide index satisfying the aforementioned three conditions: (i) it has a reflecting effect on fundamental light λ(ω); (ii) it has a transmitting effect on SH light λ(2ω); and (iii) it satisfies quasi-phase matching conditions, is obtained and a periodical guide index distribution structure is formed at this period Λ. If the period Λ satisfying the three conditions exists, light returned from the quasi-phase matching element 50 enters the LD chip 30 to cause the lasing of the LD chip 30 to launch a laser light therefrom which is used as a fundamental wave light for the quasi-phase matching element 50, thus emitting from the quasi-phase matching element 50 a second harmonic efficiently with its light intensity increasing for every coherence length. The aforementioned three conditions can be expressed by the following general formulae: Condition of reflection of the fundamental light: Λ/2 =L(ω) = pλ(ω)/4N(ω) Condition of transmission of the second harmonic: Λ/2 =L(2ω) = (2q-1)λ(ω)/8N(2ω) Condition of quasi-phase matching: Λ/2 =Lc = (2s-1)λ(ω)/4{N(ω)-N(ω)} In the above formulae, p , q and s : independent positive integers; Λ : period of variation of a guide index in a periodical guide index distribution structure; L(ω): wavelength of a fundamental wave light in a quasi-phase matching element; L(2ω): wavelength of a second harmonic light in a quasi-phase matching element; Lc: length by an odd number as large as the coherence length of a fundamental light in a quasi-phase matching element; λ(ω): wavelength of a fundamental wave light; λ(2ω): wavelength of a second harmonic light; N(ω): effective guide index of an optical waveguide for a fundamental wave light; and N(2ω): effective guide index of an optical waveguide for a second harmonic light. If the period Λ satisfying the aforementioned formulae (3) (4) and (5) simultaneously is obtained and a quasi-phase matching element is formed in accordance therewith, it is expected that a self quasi-phase matching can be achieved. Here, by the term "self quasi-phase matching method" is meant a quasi-phase matching method in which lasing is performed with light fed back from a quasi-phase matching element with suppressing lasing by a laser device by itself giving a fundamental wave light source to thereby obtain a fundamental light automatically satisfying quasi-phase matching conditions and achieve quasi-phase matching. Based on formulae (3) (4) and (5) above, relationship between the wavelength of the fundamental wave light and Lc and L(ω) were obtained and results as shown in FIGS. 6 and 7 were obtained. In FIG. 6, there are shown a group of curves satisfying conditions of reflection of a fundamental wave corresponding to from p = 10 to p = 50 and a curve corresponding to s = 1 (indicated here also by Lc). From the results a candidate value for achieving self quasi-phase matching can be obtained by extracting intersections of the group of curves satisfying the reflection conditions and the curve Lc. On the other hand, in FIG. 7, there are shown a group of curves satisfying conditions of transmission of second harmonic corresponding to from q = 30 to q = 90 and a curve corresponding to s = 1 (indicated here also by Lc). To note, in FIG. 7, values of q are indicated for every another curve. From the results a candidate value for achieving self quasi-phase matching can be obtained by extracting intersections of the group of curves satisfying the reflection conditions and the curve Lc. The aforementioned results relate to the case of s = 1. Since s takes a number of positive integers varying s = 1, 2, 3, and so on, a number of curves for Lc can be drawn. Therefore, there are numerous intersections of curves for the reflection conditions and curves for transmission conditions. Accordingly, if a value is obtained which coincides with the period Λ or an approximate value in the range where there occurs no optical trouble, then that period Λ can be used as the period satisfying the three conditions described above. Then, a more specific description will be made on period Λ for a case where an AlGaAs semiconductor laser is used and the wavelength λ(ω) of the fundamental wave is set up at 830 nm. Assuming the effective guide indices of the optical waveguide for a wavelength λ(ω) of a fundamental wave and a wavelength λ(2ω) for second harmonic are N(ω) and N(2ω), respectively, the following values can be obtained as will be calculated from the results shown in FIG. 5: N(ω) = 2.1727; and N(2ω) = 2.3139 Here, substitution of p = 15, q = 33 and s = 1 into formulae (3) (4) and (5) with an assumption that the period of the reflection condition represented by formula (3) is Λ1 gives Λ1/2 = L(ω) = 1.4325 µm. Assuming that the period of the transmission condition represented by formula (4) is Λ2, Λ2/2 = L(2ω) = 1.4572 µm. Assuming that the period of quasi-phase matching condition represented by formula (5) is Λ3, Λ 3/2 = Lc = 1.4695 µm. Thus, the periods Λ1, Λ2 and Λ3 obtained from the respective formulae can be deemed as substantially coinciding with each other. In another example where p = 46, q =99 and s = 2 with an assumption that the periods of reflection, transmission and quasi-phase matching conditions are Λ1, Λ2 and Λ3, respectively, Λ1/2 = 4.3932 µm, Λ2/2 = 4.4165 µm, and Λ3/2 = 4.4085 µm. Those values can be deemed as substantially coinciding with each other in the range optically giving no trouble. In the former example in which p = 15, q = 33 and s = 1, if the period Λ is set up to Λ = 2.9 µm, the LD chip 30 generates a laser beam having a wavelength near λ(ω) = 0.38 µm. This wavelength satisfies the quasi-phase matching condition in the quasi-phase matching element 50. The quasi-phase matching element 50 efficiently generates a second harmonic light using the laser beam at this oscillation wavelength as a fundamental wave light, with the second harmonic light being emitted from the quasi-phase matching element 50 at an increased light intensity and at a high power with substantially no reflection. In the latter case in which p = 46, q = 99 and s = 2, a high power second harmonic light is emitted similarly to the former case. In the configuration shown in FIG. 2, the second harmonic generator includes the LD chip 30 and SHG element 50 arranged in such a manner that the fundamental light can enter substantially perpendicularly to the first element end 58. Therefore, there is a high possibility that a reflected light from the first element end 58 reenters the LD chip 30, and there is a fear that sometimes the oscillation conditions of the laser diode cannot be determined by the HR coating surface (the first chip end) 34 and the period Λ of the guide index distribution structure alone. Furthermore, it is difficult to coat a antireflection film on the first and second element ends 58 and 60 of the SHG element 50. Fortunately, however, it is easy to polish ends of a crystal substrate made of LiNbO3, for example. Hence, in order to prevent the light reflected on the first element end of the SHG element from returning to the LD chip, it is sufficient to set up an incident angle of the fundamental light from the LD chip into the optical waveguide of the SHG element at the Brewster angle on the first element end. If the fundamental wave light incident into the quasi-phase matching element (SHG element) and SH light satisfy the aforementioned three conditions (i), (ii) and (iii), i.e., if there exists a period Λ satisfying formulae (3), (4) and (5) indicated above, then self quasi-phase matching can be achieved. Hereafter, discussion will be made on an embodiment in which the incident angle of a fundamental light is set up at the Brewster angle referring to FIGS. 8 and 9. FIG. 8 is a schematic cross sectional view of a second harmonic generator according to anther embodiment of the present invention, showing an arrangement of an LD chip and an SHG element corresponding to one shown in FIG. 2. FIG. 9 is a schematic perspective view of an second harmonic generating element corresponding to one shown in FIG. 1, schematically illustrating its specific construction. The LD chip and SHG element themselves used in the instant embodiment are the same in construction as the LD chip 30 and the SHG element 50 used in the arrangement shown in FIG. 2 and the like components are designated by the same reference numerals and detailed description thereon is omitted here but differences in the construction therebetween will be described in the main. First, the arrangement shown in FIG. 8 differs from the construction shown in FIG. 2 in the following points: 1) The LD chip 30 and the SHG element 50 are arranged so that the fundamental wave light from the LD chip 30 can be incident into the optical waveguide 54 of the SHG element 150 at the Brewster angle or at an angle approximate thereto; 2) The first and second ends 158 and 160 of the SHG element 150 are not covered with a low reflection coating film; and 3) Interior angles Θ1 and Θ2 between the first and second element ends 158 and 160, respectively, and the +C face (surface) of the crystal substrate 118 are not 90°. The interior angles Θ1 and Θ2 may be either Θ1 = Θ2, or Θ 1 ≠ Θ2. In a special case, Θ1 = Θ2 = Θ = 90°; in the latter case the item 3) above makes no difference. In the following description, a crystal substrate 110 is a LiNbO3 substrate and its surface 118 is +C face (also referred to as Z face). First, a brief description will be made on an SHG element 150. In the embodiment shown in FIG. 9, the first element face 158 which is the incident and emerging end of a fundamental wave light is inclined relative to the +C face 118 at an interior angle of Θ 1 (< 90°), and the second element end 160 serving as an emerging face for SH light is similarly inclined relative to the +C face 118 at an interior angle of Θ2 (< 90°). Particularly, in the embodiments shown in FIGS. 8 and 9, Θ1 = Θ2. The first and second element ends 158 and 160 are formed by polishing the substrate 100. Edges 112 and 114 formed between the first and second element ends 158 and 160, respectively, and the +C face 118 are parallel to each other. In the same manner as the SHG element in the embodiment shown in FIG. 2, the optical waveguide 54 extends in a surface region of the +C face 118 between the first and second element ends 158 and 160. The direction of extension (X direction) is substantially perpendicular to the edges 112 and 114. An interface 120 between the optical waveguide 54 and the remaining LiNbO3 region is parallel to the +C face 118. Therefore, incident light into the SHG element and emerging light from the SHG element exist in the same plane. For the remaining points, the same description as made with reference to FIGS. 1 through FIGS. 4A and 4B will be applicable and will not be repeated here. In the arrangement shown in FIG. 8, the first element end 158 is inclined relative to the +C face at an inclination angle of Θ1, which enables introduction of a light (fundamental light) emerging from the LD chip 30 on the incident face 158 being the first element end at the Brewster angle 1 and also propagation of the light (fundamental light) incident into the optical waveguide 54 in the optical waveguide in a guided mode. Conditions therefor are as follows: 1 = tan-1 n2 Θ1 > sin-1 (n3/n2) - sin-1 {(1/n2)sin(tan-1 n2)} Θ1 < 180° - sin-1 (n3/n2) - sin-1 {(1/n2)sin(tan-1 n2)} Here, n2: guide index of the optical waveguide for the fundamental light; n3: guide index of LiNbO3 for the fundamental light. During the step i which the first element end 158 is formed precise wavelengths of the fundamental light and SH light are unknown but it is sufficient to set up the wavelength of the intended fundamental light in the stage of designing the quasi-phase matching element 150 so that the wavelength can satisfy the Brewster condition. More specifically, the Brewster angle 1 may be set up at several values in the vicinity of an intended wavelength an optimal combination may be chosen in a stage of integrating the LD chip and the SHG element. However, conditions for 1 are considerably loose and deviation of incident angle  of the fundamental light from 1 by a few degrees causes no reflection on the incident and emerging face. That is, of the light from the active layer 32 of the LD chip 30, a light component linearly polarized in a direction substantially parallel to the plane of the figure enters the optical waveguide 54 with substantially no reflection on the first element end. Of the fundamental light incident into the SHG element 150, light which is not fed back and SH light generated are reflected repeatedly between the interface 120 and the +C face 118 to reach the second element end, i.e., emerging end 160 and emitted therethrough. Next, referring to FIGS. 8 and 9, a more specific description will be made on the inclination angle Θ1 of the incident and emerging end 158 of the quasi-phase matching (SHG) element 150. In FIG. 8, the SHG element 150 is shown as being arranged perpendicular to the +C face 118 of the LiNbO3 substrate 110 and in the direction in which the optical waveguide 54 extends, expressed in cross section in a plane passing through the optical waveguide 54. The SHG element 150 originally has a long distance between the first and second element ends as shown in FIG. 9, but in FIG. 8 it is shown schematically with its length being reduced. In order for the oscillation conditions of the laser diode to be dependent on only the HR coating surface 34 and the period L of the periodical guide index distribution structure 70, it is necessary that the light reflected at the incident and emerging end 158 of the quasi-phase matching (SHG) element 150 will not be fed back to the LD chip 30. This can be achieved by inclining the incident and emerging end 158 with respect to the substrate surface (+C face) 118 as shown in FIGS. 8 and 9. In this occasion, it is ideal if the fundamental light can be introduced into the optical waveguide 54 without being reflected at the incident and emerging end 158. To achieve this, it is sufficient to set up the incident angle  at the Brewster angle 1. In order for the incident light to propagate in the optical waveguide 54 under this condition, formulae (6), (7) and (8) have to be satisfied. It is assumed that the incident angle  satisfies the Brewster condition for the fundamental light. Then,  = 1. The LD chip 30 is arranged in FIG. 8 such that the direction of vibration of the electric field of the emerging light or p-polarized light is parallel to the plane of the figure. The fundamental light or p-polarized light enters into the optical waveguide 54 without being reflected at the incident face 158 which is the first element end. The fundamental light and SH light are emitted through the emerging end 160 without being reflected thereon. The s-polarized light is totally reflected at the incident face 158 and will not return to the LD chip 30 side. If there is a slight reflection at the incident and emerging end 158 due to the fact that the incident angle  does not satisfy the Brewster condition strictly or some other reasons, reflected light of the p-polarized light will not return to the LD chip 30. That is, the wavelength of the generated light from the LD chip 30 is determined depending on the HR coating surface 34 and the periodical guide index distribution structure 70 in the optical waveguide 54. In other words, if only the AR conditions of the AR coating surface 40 are met completely, the LD chip 30 and the SHG element 150 can be arranged so that a desired fundamental light can be obtained with adjustment of the incident angle  by polishing without strict AR coating treatment of the incident and emerging end 158 of the SHG element 150. Conditions which the interior angle Θ1 has to satisfy in order to permit the fundamental light satisfying the Brewster condition to propagate or be guided in the optical waveguide 54 are specifically obtained as follows. Here, an example is taken in which the wavelength λ(ω) of the fundamental light is set up at 830 nm. First, it is required that when the fundamental light is guided in the optical waveguide 54, the incident fundamental light which was incident at an incident angle  being equal to the Brewster angle 1 and entered into the optical waveguide 54 at a refractive angle 2 satisfy complete reflection conditions at point P on the interface 120 between the LiNbO3 substrate 100 and the optical waveguide 54. If the conditions are met, the conditions of complete reflection at the +C face, which is an interface between the optical waveguide and air, are automatically satisfied. Using formulae (6), (7) and (8), conditions for Θ1 are obtained. First, n3 = N(ω) = 2.1727. Guide index n2 increases by proton exchange. Calculation is made with assumption that n2 has increased by about 0.1 based on various data. n2 = N(ω) + 0.1 = 2.2727. From formula (6), there can be obtained: 1 = tan-1 n2 =tan-1 2.2727 = 66.3°. From formula (7), there can be obtained: Θ1 > sin-1 2.1727/2.2727 - sin-1 {(1/2.2727)sin(tan-1 2.2727)} = 49.2°. From formula (8), there can be obtained: Θ2 < 180 - sin-1 2.1727/2.2727 - sin-1 {(1/2.2727)sin(tan-1 2.2727)} = 83.3°. That is, when the wavelength of the fundamental wave is set up at λ(ω) = 830 nm, Θ1 has to be set up in the range of: 49.2° < Θ1 < 83.3°, in order to satisfy desired conditions. As discussed above, the embodiment shown in FIG. 8 can realize with ease the quasi-phase matching that was difficult to attain conventionally, thus enabling fabrication of an SH generator with a high conversion efficiency. As will be apparent from the embodiments shown in FIGS. 1 and 8, the second harmonic generator in acordance with the present invention is of a construction including a semiconductor laser chip and a quasi-phase matching element optically coupled together and capable of realizing second harmonic generation (SHG) by automatically obtaining a wavelength of fundamental wave light which enables quasi-phase matching, i.e. self quasi-phase matching. As a result, in the aforementioned illustrative embodiments, the emerging end of the semiconductor laser chip is provided with a low reflection coating (AR coating) to put it in a state in which the lasing of the semiconductor laser by itself is suppressed and the semiconductor laser is automatically activated by a light fed back from the optical waveguide in the quasi-phase matching element at a wavelength which satisfies the quasi-phase matching conditions of the quasi-phase matching element. The generated laser beam is introduced into the quasi-phase matching element as a fundamental wave light to generate the second harmonic in the quasi-phase matching element. Also, in the aforementioned embodiments, feedback of a light from the quasi-phase matching element side is realized by the use of a periodical domain inversion structure. In the embodiments described above, the periodical domain inversion structure is formed by diffusing Ti in an optical waveguide provided in a LiNBO3 substrate. The Ti-diffused domain inversion regions have guide indices slightly higher than the guide indices of the non-domain inverted regions (domain non-inversion regions), resulting in that the periodically arranged domain inversion regions form a reflection type diffraction grating, thus coinciding with the periodical guide index distribution structure. The wavelength of a light reflected by the periodical guide index distribution structure is determined by the period of the domain inversion regions. Hence, in the aforementioned embodiments, the period of the inversion structure is determined so as to satisfy the quasi-phase matching conditions and the reflection conditions of the fundamental light as well, thus arranging the quasi-phase matching element and the semiconductor laser chip in optical coupling such that the light fed back from the quasi-phase matching element can be returned into the active layer of the semiconductor laser in order to realize second harmonic generation based on self quasi-phase matching. Particularly in the embodiment shown in FIG. 2, use is made of a planar type element as the quasi-phase matching element, and the LD chip and quasi-phase matching element are arranged so that the fundamental wave light can enter the first element end at right angles. In the embodiment shown in FIG. 1, the LD chip and the quasi-phase matching element are arranged so that the fundamental wave light can be incident at the Brewster angle. However, the present invention is not limited to the illustrative embodiments described above and shown in the drawings, and it is obvious to one skilled in the art that various modification or variation may be made thereto. For example, the periodical domain inversion structure and the periodical guide index distribution structure may differ from one another and any type of quasi-phase matching element may be used so far as it has a periodical guide index distribution structure in the optical waveguide in contrast to the preceding embodiments in which the both structures coincide with each other. Although the quasi-phase matching element is made of LiNbO3 crystal in the aforementioned embodiments, KTP instead of LiNbO3 crystal may be used for forming the element. While the optical waveguide in the quasi-phase matching element is formed by a proton exchange method in the aforementioned embodiments, an optical waveguide formed on a substrate material by any suitable method may be used. In that case, an optical waveguide cannot be formed on a LiNbO3 substrate by the Ti diffusion method because the method gives domain inversion regions throughout the optical waveguide but fails to provide a periodical domain inversion structure. When a LiNbO3 substrate is used, an optical waveguide may preferably be formed by an Li+ - H+ exchange method usually used after the formation of domain inversion regions. In the above-described embodiments, the domain inversion regions are formed by Ti diffusion on a LiNbO3 substrate but external diffusion of LiO2 may also be used instead of Ti diffusion. While in the embodiment of the second harmonic generator as shown in FIG. 8, at least the first element end of the quasi-phase matching element is formed as an incident and emerging face by polishing such that it is inclined with respect to the +C face of the substrate at an interior angle Θ1 which is smaller than 90°, the interior angle Θ1 may be 90° if there is a possibility that the incident angle of the fundamental wave light can be set up at the Brewster angle even when Θ1 = 90°. The angle Θ2 of inclination of the second element end serving as an emerging face relative to the +C face is preferably Θ1 = Θ2 because the Brewster conditions are met but it does not have to be that Θ1 = Θ2. In case Θ1 ≠ Θ2, there is no fear that lasing is disturbed with the fundamental wave light of the LD since the light is fed back after repeated reflection in the optical waveguide in the SHG element resulting in increased attenuation although light returning by reflection at the emerging end also exists. It is also necessary that the fundamental wave light of the SHG element used in the second harmonic generator has a wavelength in the range of gain of the semiconductor laser chip used. While in the aforementioned embodiments, description has been made by setting up the wavelength of the fundamental wave light at 830 nm, fundamental wave lights having other wavelengths can also be generated. In this case, numerical conditions used or obtained in the aforementioned embodiments are varied. Of course such numerical conditions may vary depending on materials used for the substrate of an SHG element and for the optical waveguide. Furthermore, the semiconductor laser chip may be other than AlGaAs type ones, for example, InGaAs, InGaAsP or other InAs type semiconductor laser chips. In addition, in the embodiment of the second harmonic generator as shown in FIG. 2, description has been made on the use of a planar type quasi-phase matching element. However, this element may also be formed in the form of an optical fiber, with forming a core serving as an optical waveguide so as to have a structure in which guide index varies periodically (periodical guide index distribution structure) and making higher guide index portions and lower guide index portions to have different diameters from one another. An example of such an optical fiber type of quasi-phase matching element is shown in FIG. 10. In that case, a quasi-phase matching element 80 may be constructed to include, for example, a core 82 made of LiNbO3, a clad made of suitable material and provided around the core 82 and having a guide index lower than that of the core 82, the core 82 having periodically a higher and a lower guide index regions 86 and 88, thus forming a periodical guide index distribution structure. Preferably, the lengths of the higher and lower guide index regions, respectively, may be set up at coherence length or a length by an odd number as large as the coherence length. This construction allows the second harmonic to increase period after period (for every 2 1c) in accordance with the difference between the generation efficiency of the second harmonic in the lower guide index region 88 and that of the second harmonic in the higher guide index region 86. In the construction shown in FIG. 2, a 1/2 wavelength plate 72 is inserted between the semiconductor laser chip 30 and the quasi-phase matching element 50. The use of the 1/2 wavelength plate 72 is to realize an efficient introduction of the emerging light from the active layer 32 of the semiconductor laser into the optical waveguide 54 in the quasi-phase matching element 50. However, the plate 72 may be omitted.

Claims: A light source comprising a semiconductor laser-active structure (30) and a second harmonic generating element (50;80;150) arranged to receive light of a fundamental wavelength (λ ω ) from the laser-active structure (30) and generate light at a second harmonic wavelength (λ 2ω ) therefrom, characterised in that the fundamental wavelength light (λ ω ) is emitted from one end (36) of the laser-active structure (30) to the second harmonic generating element which (50;80;150) performs quasi-phase matching to generate light at said second harmonic wavelength (λ 2ω ), and the resonator of the laser-active structure (30) is defined by the other end (34) of the laser-active structure (30) and a grating comprising refractive index variations in the second harmonic generating element (50;80;150). A light source according to claim 1, wherein the the second harmonic generating element (50;80;150) comprises an optical waveguide (54;82) whose refractive index varies periodically along its length. A light source according to claim 2, wherein the refractive index variations of the waveguide (54;82) are such that light of the second harmonic wavelength (λ 2ω ) is transmitted thereby. A light source according to claim 2 or 3, wherein the second harmonic generating element (50;80;150) comprises a crystalline substrate (100) having a +C surface (118), an optical waveguide (54) formed at the +C surface (118) of the substrate (100). A light source according to claim 4, wherein the substrate comprises LiNbO₃, the optical waveguide (54) is formed by a Li+ - H+ proton exchange method and the refractive index variations are formed by Ti diffusion. A light source according to claim 4 or 5, wherein the waveguide (54) extends between first (158) and second (160) end faces of the substrate (100), the end faces (158,160) are inclined with respect to the +C surface (118) by respectively first (1) and second (2) interior angles, and the laser-active structure (30) and the second harmonic generating element (150) are disposed relative to each other such that fundamental wavelength light (λ ω ) from the laser-active structure (30) is incident on the waveguide (54) at approximately the Brewster angle. A light source according to claim 6, wherein said interior angles (1,2) are the same. A light source according to claim 6 or 7, wherein the substrate (100) includes a layer (110) of unmodified crystalline material having an interface with the waveguide (54), lying parallel to the +C surface (118), and the first angle (1) is arranged such that fundamental wavelength light (λ ω ) from the laser-active structure (30) is subject to total internal reflection by the interface. A light source according to claim 8, wherein the following conditions are satisfied: 1 = tan -1 n2 1 > sin -1 (n3/n2) - sin -1 ((1/n2) sin(tan -1 n2)) 1 < 180° - sin -1 (n3/n2) - sin -1 {(1/n2) sin(tan -1 n2)} where: 1 is said Brewster angle; n2 is the refractive index of the waveguide (54) at said fundamental wavelength; and n3 is the refractive index of said unmodified crystalline material (110) at said fundamental wavelength. A light source according to any one of claims 6 to 9, wherein the first angle (1) is greater than 49.2° and less than 83.3°, and the wavelength of the fundamental wavelength light (λ ω ) is 830 nm. A light source according to any one of claims 6 to 10, wherein the edges where the end faces (158,160) meet the +C surface (118) are parallel to each other. A light source according to claim 2 or 3, wherein the second harmonic generating element (50;80;150) comprises an optical fibre (80). A light source according to any one of claims 2 to 12, wherein the following conditions are met by the waveguide (54;80): Λ/2 = L c = (2s - 1) λ(ω) / 4{N(2ω) - N(ω)} Λ/2 = L(ω) = p λ(ω) / 4N(ω) Λ/2 = L(2ω) = (2q - 1) λ(ω) / 8N(2ω) where: s, p and q are positive integers; Λ is the period of the refractive index variations; L c is an odd number of coherence lengths for light of the fundamental wavelength; L(ω) is an odd number of coherence lengths for light of the fundamental wavelength; λ(ω) is the fundamental wavelength; N(ω) is the effective refractive index of the waveguide at the fundamental wavelength; and N(2ω) is the effective refractive index of the waveguide at the second harmonic wavelength. A light source according to any preceding claim, wherein said one end (36) of the laser-active structure (30) is provided with an anti-reflective coating (40) and said other end (34) of the laser-active structure (30) is provided with a reflective coating (38) to form one end of the resonator. A light source according to any preceding claim, wherein the light input (58;158) and light output (60;160) ends of the second harmonic generating element (50;80;150) have anti-reflective coatings. A light source according to any preceding claim, wherein λ/2 plate (72) is located in the light path between the laser-active structure (30) and the second harmonic generating element (50;80;150). A light source according to any preceding claim, including a supply of current to the laser-active structure (30), the current being in a range which does not cause the laser-active structure (30) to lase.

Inventors: KAMIJOH TAKESHI, SHINOZAKI KEISUKE, KAMIJOH, TAKESHI, SHINOZAKI, KEISUKE, Kamijoh, Takeshi, c/o Oki Elec. Ind. Co., Ltd., Shinozaki, Keisuke, c/o Oki Elec. Ind. Co., Ltd.
Applicants: OKI ELECTRIC IND CO LTD, OKI ELECTRIC INDUSTRY CO., LTD.
Application year: 1991
Main classification: G02F1
IPC codes: G02F1, H01S5, H01S3