Accelerometer

Abstract: An accelerometer is provided which has a silicon substrate (14) bonded to a silicon capping plate (30) and a silicon back plate (32), wherein the bonds (26,28) between the three silicon wafers are characterized by a relatively low residual stress level over a wide temperature range. The bonds (26,28) are formed by means of an appropriate adhesive at a relatively low temperature without degradation to the accelerometer. The bonds (26,28) between the silicon wafers also provide stress relief during use and packaging of the accelerometer. The damping distance for the proof mass of the microaccelerometer can be accurately controlled and stop means (42,44) are provided for preventing excessive deflection of the proof mass (12) in a direction perpendicular to the plane of the accelerometer.

Description: This invention relates to an accelerometer, particularly of the type comprising means for preventing excessive deflection of the proof mass. An accelerometer is one of the major sensors used in navigational systems, particularly inertial navigational systems, and on-board automotive safety control systems. Automotive examples of accelerometer use include various anti-lock braking systems, active suspension systems, and seat-belt lock-up systems. In general terms, an accelerometer is a device which measures acceleration and, specifically, it measures the force that is exerted when a body changes velocity. The body possesses inertia, which causes the body to resist the change in velocity. It is this resistance to a sudden change in velocity that is the origin of the force which is exerted by the body when it is accelerated. This force is proportional to the acceleration component in the direction of the movement, and is used by an accelerometer to give a measure of acceleration. In a typical accelerometer, a mass is suspended by two springs attached to opposite sides of the mass. The mass is maintained in a neutral position so long as the system is at rest or is in motion at a constant velocity. When the system undergoes a change in velocity in the direction of the springs' axis or perpendicular to the springs' axis to cause it to be accelerated in one of these directions, the spring-mounted mass will at first resist the movement along that axis because of its inertia. This resistance to the movement, or delay in the movement, will force the springs to be either stretched or compressed temporarily. The tensile or compressive force acting on each spring is related to the product of the weight of the mass and the acceleration of the mass. The acceleration is then determined by the change in velocity experienced by the mass. Integrated circuit microaccelerometers having a proof mass suspended by pairs of piezoelectric microbridges are also known. An illustrative example of this type of accelerometer is disclosed in U.S. Patent No.4901,570. In a microaccelerometer of this type, a proof mass is suspended by at least one pair of piezoelectric microbridges. The pair of microbridges are attached to opposite ends of the proof mass along a common axis. The acceleration of the mass is determined by the change in force acting upon each piezoelectric bridge. This type of resonant microaccelerometer is attractive for precision measurements, because the frequency of a micromechanical resonant structure can be made highly sensitive to physical or chemical signals. A shortcoming exists with regard to the manufacturing of these and other types of microaccelerometers. The microbridges from which the proof mass is suspended are typically formed from extremely thin layers of material, generally silicon. These thin microbridges are extremely susceptible to damage if the proof mass is allowed to deflect excessively. Therefore it is desirable that the proof mass be permitted to deflect sufficiently to produce an adequate signal for measurement purposes, but not so much that it causes degradation to the microbridges or other components of the microaccelerometer. A common practice has been to sandwich the silicon wafer incorporating the accelerometer components between two other wafers of a compatible material such that there is a predetermined gap between the proof mass and each of the two surrounding wafers to permit the proof mass to deflect. The gap is chosen in accordance with the design requirements for the sensor and permits the proof mass to deflect that predetermined distance before contacting the surrounding wafer, which prevents it from deflecting any further. However, there are difficulties associated with the current methods for manufacturing microaccelerometers of the type in which the device wafer is sandwiched between two wafers of a compatible material. One common method has been to bond the silicon microaccelerometer device electrostatically between two glass plates; each of the glass plates having a recess of appropriate height so as to permit the deflection of the proof mass. However, the mismatch in thermal coefficients of expansion between the silicon wafer and glass wafers causes thermally induced stresses over the wide temperature range in which the microaccelerometer must satisfactorily operate. This is particularly true if the microaccelerometer is used in an automobile. Also, it is inherently difficult to machine glass to form the required recesses. For these reasons, this current practice of bonding the silicon microaccelerometer wafer between two glass plates has been found unacceptable. An alternative method of forming the microaccelerometer has been to sandwich the silicon device between two silicon wafers, each of the surrounding silicon wafers also having an appropriately provided recess for deflection of the proof mass. The silicon wafers are then bonded together using conventional gold eutectic bonding techniques. However, although this method alleviates the problem of mismatched thermal coefficients, it is also problematic. In order to initiate the formation of the eutectic bond, the wafer surfaces must be aggressively scrubbed together to ensure intimate contact between the surfaces. This cannot be done easily once the microaccelerometer components have been formed on the intermediate silicon wafer, since this aggressive action is detrimental to the device components. Yet it is only after the components have been formed that the surrounding wafers can be bonded to the microaccelerometer, thereby making this method also unacceptable. EP-A-0 387 518 discloses a microaccelerometer formed as a three-part capacitor having top and bottom plates formed of rigid silicon members bonded to an intermediate silicon frame which contains a proof mass. Bonding is by means of glass borders formed between the frame and the top and bottom plates. Insulating glass coated travel stops are located at various locations on mesas provided respectively on the top and bottom plates in order to prevent the proof mass from coming into contact with either mesa. EP-A-0 395 922 discloses a capacitive micromechanical accelerometer consisting of a stop cover, a spring part and an electrode cover. The spring part includes a proof mass. The individual parts of the capacitively operating acceleration sensor are preferably made from glass, ceramics or silicon and may be joined by applying an external voltage at increased temperature or by suitable adhesives. The stop cover includes raised portions to support the proof mass. The present invention seeks to provide an improved accelerometer. According to an aspect of the present invention, there is provided an accelerometer as specified in claim 1. According to another aspect of the present invention, there is provided a method of forming an accelerometer as specified in claim 10. The invention can provide an accelerometer in which bonds between the accelerometer and surrounding wafers have a relatively low stress level which does not result in unnecessary residual stress to the device. Further, it can provide means for facilitating accurate and precise control of the spacing between the bonded wafers, while also incorporating a stop into its design to prevent excessive deflection of the proof mass. Such bonds can also be formed without degradation to those components, such as by forming at a relatively low temperature without any aggressive scrubbing type action. The accelerometer can be suitable for accurately determining the acceleration of a proof mass in a plane perpendicular to the plane of the accelerometer. In an embodiment, the accelerometer comprises a silicon substrate oriented essentially along a single crystallographic plane. The single crystal silicon substrate preferably has a front and a back surface which are substantially parallel to each other, a proof mass being formed within the silicon substrate, whereby the proof mass is suspended from microbridges within the silicon substrate. Therefore, a gap may be provided substantially everywhere between the substrate and the proof mass except at the microbridges. Electronic means for detecting a change in the acceleration of the mass are advantageously provided on the front surface of the silicon substrate and proof mass. These means for detection may provide an indication of acceleration in the plane of the proof mass by detecting the change in movement of the proof mass. The accelerometer is preferably bonded near its perimeter, to a silicon capping plate and a silicon back plate so as to prevent excessive displacement of the proof mass in a direction perpendicular to the plane of the proof mass, i.e., a z-axis direction. The accelerometer is preferably a microaccelerometer. Both the silicon capping plate and silicon back plate are machined to have a support column of a predetermined height provided continuously around the region adjacent their outer perimeter where they are bonded to the silicon substrate. The capping plate is bonded to the front surface of the microaccelerometer and the back plate is bonded to the rear surface of the microaccelerometer near their respective support columns. The plates are preferably bonded together by providing an appropriate adhesive at the outer perimeter of the wafers. The adhesive bonds preferably have a low residual stress, even over a wide temperature range and can be formed at a relatively low temperature without unnecessary degradation to the microaccelerometer components. In addition, the adhesive bonds can provide some isolation for the microaccelerometer from stresses arising from vibration during use or packaging. The support columns can form a recessed area within each of the plates. The recessed area would have a diameter determined by the location of the support column and a depth equal to the height of the support column. The recessed areas can enable the proof mass of the accelerometer to deflect within these recessed areas. Therefore, the predetermined height of the support columns is preferably chosen to optimize design specifications for the microaccelerometer, and can be accurately controlled. Within the recessed region of each plate, at least one stop means may be provided to prevent excessive deflection of the proof mass in a direction perpendicular to the front and back surfaces of the microaccelerometer. The stop means on each plate is preferably a second machined column of a second predetermined height which is less than the first predetermined height of the support column. An embodiment of the present invention is given below, by way of illustration only, with reference to the accompanying drawing, in which: Figure 1 is a cross-sectional view of an embodiment of microaccelerometer bonded to a capping plate and a back plate wherein both the capping plate and the back plate comprise stops for preventing excessive deflection of the proof mass within the microaccelerometer; and Figure 2 is an enlarged view of an illustrative bonding region within the microaccelerometer showing both a support column and adhesive. As shown in Figure 1, an accelerometer 10 is adapted to give a measure of acceleration when a proof mass 12 thereof moves in a direction perpendicular to the plane of the microaccelerometer 10 (in other words sideways or into or out of the plane of the paper in the view of Figure 1). The microaccelerometer 10 is formed from a silicon substrate 14 oriented substantially along a single crystallographic plane. It is preferred that the silicon substrate 14 be a single crystal oriented along the 〈100〉 crystallographic plane for optimal micromachining results, however, suitable results are also obtained when the silicon substrate 14 is oriented along the 〈110〉 crystallographic plane. The single crystal silicon substrate 14 comprises front and back surfaces 16, 18, which are substantially parallel to each other. The proof mass 12 is formed within the silicon substrate 14 and is supported on the remainder of the accelerometer 10 by microbridges 22. In the preferred embodiment, there are provided four microbridges located evenly around the proof mass 12. The proof mass 12, is formed using known micromachining techniques, such as disclosed in European patent application No.91202123.5. Alternative conventional methods for micromachining the silicon substrate 14 may also be used to form the proof mass 12 and microbridges 22. A gap 20 is provided between the proof mass 12 and the silicon substrate 14, leaving only the microbridges 22 connecting the proof mass 12 to the substrate 14. Electronic means for detecting a change in the acceleration of the proof mass 12 is provided substantially over the front surface 16 of the silicon substrate 14, including the proof mass 12 and the microbridges 22. The electronic means is depicted by the cross-hatched region 24. In use, the electronic means 24 provides, by any suitable method, an indication of acceleration in the plane of the proof mass 12 (that is sideways or into or out of the plane of the paper or any combination thereof in the view shown in Figure 1) by detecting the change in movement by the proof mass 12, and producing a suitable signal. Generally, the microaccelerometer 10 measures the components of acceleration in the plane of the silicon substrate 14 by the following technique. Preferably, the silicon microaccelerometer 10 contains two pairs of microbridges which are orthogonally attached to the silicon proof mass 12, so as to be positioned along the x- and y-axis of plane of the microaccelerometer. (Only one pair of microbridges 22 is shown in the cross-sectional views of Figures 1 and 2, the second pair of microbridges being orthogonal to the first pair 22.) In order to cancel temperature and material effects to the first order, the microbridges 22 which are attached to opposite sides of the proof mass 12 should be matched, so that they experience equivalent differential axial loads during acceleration. The inertial force on the proof mass 12, due to acceleration in the plane of the substrate 14, generates the differential axial loads on the opposing microbridges 22 of each pair, thereby causing a corresponding change in piezoresistors formed in each microbridge 22. The microaccelerometer 10 is bonded near its perimeter 26 and 28 to a silicon capping plate 30 and a silicon back plate 32 respectively. The purpose of the capping plate 30 and back plate 32 is to protect the electronic detection means 24 and proof mass 12 during use, and to prevent excessive displacement of the proof mass 12 in a direction perpendicular to the plane of the proof mass 12 and substrate 14, i.e., the z-axis. The bonds between the silicon substrate 14 and the two plates 30 and 32 have a relatively low stress, and also provide means for accurately controlling the spacing in which the proof mass 12 deflects between the microaccelerometer 10 and these two plates 30 and 32. Both the silicon capping plate 30 and silicon back plate 32 are machined to have support columns 34, 36, each of a predetermined height and being disposed continuously around the substrate 14 so as to support the substrate 14. Around the outer periphery of the support columns 34, 36, there is provided a bond 28 (Figure 2) for bonding the plates 30, 32 to the microaccelerometer 10. The support columns 34 and 36 are machined out of the silicon substrate 14 using conventional patterning and etching techniques. The height of the support columns 34 and 36 is determined by the particular application and the processing parameters required to form the columns, and essentially determines the height of the gap between the proof mass 12 and each plate 30 and 32, and correspondingly the amount of deflection or damping distance for the proof mass 12. This damping distance is critical to the performance of the microaccelerometer 10 and can be accurately controlled by the height of the support columns 34 and 36. The support columns 34 and 36 do not have to be the same height, although it is foreseeable that in most applications they would do. The capping plate 30 is bonded to the front surface 16 of the microaccelerometer 10 and the back plate 32 is bonded to the back surface 18 of the microaccelerometer 10 at respective regions 26 and 28 adjacent to support columns 34, 36. It is preferred that the bonded regions 26 and 28 are adjacent to the support columns 34 and 36 to ensure intimate contact between the mating surfaces of the support columns 34 and 36 and the silicon substrate 14. The silicon substrate 14 and the capping and back plates 30 and 32 are bonded together by providing an appropriate adhesive at the regions 26 and 28. To ensure thorough bonding between the plates 14, 30 and 32, the adhesive should be provided continuously around the perimeters of the capping plate 30 and back plate 32. As an illustrative example, shown in Figure 2, the back plate 32 is bonded to the silicon substrate 14 by applying the adhesive at that region 28 adjacent to the support column 36 of the back plate 32. The adhesive may be conventionally screen-printed onto the substrate, or other suitable alternative methods for depositing the adhesive may also be used. It is preferred that the adhesive be a silicone rubber such as an adhesive of the RTV type (registered trademark). A particularly suitable type of RTV adhesive (registered trademark) is commercially available from Dow Chemical under the product code Q36611. Other suitable RTV adhesives (registered trademark) may also be used, as well as other types of adhesives. After applying the adhesive, the silicon substrate 14 and silicon plates 30 and 32 are bonded together by stacking the plates 14, 30 and 32 as shown in Figure 1 and applying an appropriate weight to the stack of plates 14, 30 and 32 during the curing process for the adhesive. The weight is not necessary but ensures intimate and thorough contact between the plates 14, 30 and 32 during the curing process. The curing process for the adhesive is carried out at a relatively low temperature which, of course, will not cause any significant damage to the microaccelerometer 10 or its electrical components (depicted by region 24) during bonding, even though the plates 14, 30 and 32 must be bonded together after the electrical components 24 are formed. For the preferred adhesive, Dow Chemical's Q36611 RTV adhesive (registered trademark), a curing temperature of about 150°C for about 3 to 4 hours is used. The adhesive bonds 26 and 28 within the microaccelerometer 10 have a low residual stress, even over a wide temperature range. Even after curing, the adhesive bonds 26 and 28 remain somewhat pliable, thereby providing a degree of stress isolation for the microaccelerometer 10 during use and packaging. In addition, because the silicon substrate 10 is the same material as the capping plate 30 and back plate 32, thermally induced stresses due to mismatched thermal coefficients of expansion are substantially non-existent. Bonding the microaccelerometer 10 components in this manner results in a device having very little residual stress which yields good device performance over a wide temperature range. It is to be noted that the support columns 34 and 36 form a recessed region, 38 and 40 respectively, within each of the silicon plates 30 and 32. The recessed regions 38 and 40 have a diameter determined by the location of the corresponding support column 34 and 36, and a depth equal to the height of the support column 34 and 36. The recessed regions 38 and 40 are provided so that the proof mass 12 of the accelerometer 10 can deflect in the z-axis direction which is perpendicular to the front and back surfaces 16 and 18 of the microaccelerometer 10. Within the recessed region 38 and 40 of each plate 30 and 32, at least one stop, 42 and 44 respectively, is also provided to prevent excessive deflection of the proof mass 12. The stop 42, 44 on each plate 30 and 32 is preferably a second machined column of predetermined height which is less than the first predetermined height of the support columns 34 and 36. The stop columns 42 and 44 are machined using conventional patterning and etching techniques for silicon, and can be formed concurrently with the support columns 34 and 36. The height of the stop columns 42 and 44 may vary, but it is always less than the height of the support columns 34 and 36, so as to permit some deflection by the proof mass 12. The difference between the height of the stop columns 42 and 44, and the support columns 34 and 36 (and correspondingly the damping distance for deflection by the proof mass 12) depends on the particular application. For a microaccelerometer detecting low accelerations, the difference in heights between the columns should be small so that the amount of deflection by the proof mass 12 is small. Conversely, for applications where the microaccelerometer 10 will be detecting greater accelerations, the difference between the heights of the support columns 34 and 36 and the stop columns 42 and 44 needs to be larger to permit greater movement of the proof mass 12. As should be apparent, the stop columns 42 and 44 permit sufficient movement of the proof mass 12 yet protect the proof mass 12 from excessive deflection. In a particular application, for a microaccelerometer 10 designed to measure an acceleration of up to about 25 g, the difference between the height of the support columns 34 and 36 and the stop columns 42 and 44 is about 5 micrometres. Therefore, the proof mass 12 is allowed to deflect 5 micrometres in either direction before contacting the stop 42 provided on the capping plate 30 or the stop 44 provided on the back plate 32. In practice, it has been found that this difference should normally be no greater than about 5 micrometres. It should be noted that the heights of the stops 42 and 44 do not need to be equal, however in practice they are always likely to be approximately equal. In addition, the number of stop columns 42 and 44 on each plate 30 and 32 may vary depending on the application and the processing techniques used. It is desirable that the stops 42 and 44 are symmetric about the centre of their respective plate 30 and 32, so as to ensure equal and even distribution of the stopping action to the proof mass 12.

Claims: An accelerometer comprising a silicon support (14) which includes first and second surfaces (16,18) which are substantially parallel to one another; a mass (12) formed within the silicon support and adapted to be suspended from the support; a first silicon plate (30) comprising a first support column (34) adapted to abut the silicon support and extending continuously around the mass, a first continuous layer (26) of adhesive extending continuously around the mass and in the region of the first support column so as to bond the first silicon plate to the first surface of the silicon support such that a gap is provided by the first support column between the first silicon plate and the silicon support so as to cause the mass to be suspended from the silicon support and adhesive is located in said gap, and a first stop (42) having a height which is less than the height of the first support column; and a second silicon plate (32) comprising a second support column (36) adapted to abut the silicon support, and extending continuously around the mass, a second continuous layer (28) of adhesive extending continuously around the mass and in the region of second support column so as to bond the second silicon plate to the second surface (18) of the silicon support such that a gap is provided by the second support column between the silicon plate and the silicon support so as to cause the mass to be suspended from the silicon support and adhesive is located in said gap, and a second stop (44) having a height which is less than the height of the second support column; wherein the first and second stops (42,44) have heights adapted to prevent excessive deflection of the mass towards the first and second plates. An accelerometer according to claim 1, wherein the first stop comprises a rib formed on the first plate and the second stop comprises a rib formed on the second plate. An accelerometer according to claim 1 or 2, comprising detecting means (24) for detecting a change in the acceleration of the mass and adapted to provide an indication of acceleration of the mass, the detecting means being disposed substantially on the first surface of the silicon support. An accelerometer according to claim 1, 2 or 3, wherein the silicon support is substantially equally spaced from the first and second plates, and the mass is substantially equally spaced from the first and second stops. An accelerometer according to claim 4, wherein the difference between the spacing from the support to the first or second plate and the spacing from the mass to the first or second stop is not greater than about five micrometres. An accelerometer according to any preceding claim, wherein the first and second layers of adhesive are formed from a silicone based adhesive. An accelerometer according to any preceding claim, wherein the silicon support is oriented substantially along a single crystallographic plane. An accelerometer according to any preceding claim, wherein the mass is secured to the silicon support by a plurality of bridge pieces (22). An accelerometer according to any preceding claim, wherein the first and/or second silicon plates are bonded to the silicon support by bonds (26,28) proximate the outer perimeter of their respective support column. A method of forming an accelerometer comprising the steps of providing a silicon support (14), first and second surfaces (16,18) on the silicon support which are substantially parallel to each other and a mass (12) adapted to be suspended from the silicon support; providing on the first surface of the silicon support detecting means (22) for detecting a change in the acceleration of the mass and adapted to provide an indication of acceleration of the mass; providing a first silicon plate (30), and a first support column (34) on the first silicon plate extending continuously around the mass, and a first stop (42) on the first silicon plate having a height which is less than the height of the first support column; providing a second silicon plate (32), and a second support column (36) extending continuously around the mass, and a second stop (44) on the second silicon plate having a height which is less than the height of the second support column; bonding in the region of the first support column the first silicon plate to the first surface of the silicon support by means of a first continuous layer (26) of adhesive; and bonding in the region of the second support column the second silicon plate to the second surface of the silicon support by means of a second continuous layer (28) of adhesive; a first gap being provided by the first support column between the silicon support and the first plate, and a second gap being provided by the second support column between the second plate and the silicon support; and adhesive being located in said first and second gaps. A method according to claim 10, wherein the heights of the first and second support columns are substantially equal, and the heights of the first and second stops are substantially equal and less than the height of the first and second support columns. A method according to claim 10 or 11, wherein the height of the first and second support columns is greater than the height of the first and second stops by not more than about five micrometres. A method according to any one of claims 10 to 12, wherein the first and second layers of adhesive are of silicone based adhesive. A method according to claim 13, comprising the step of curing the silicone based adhesive at a temperature of approximately 150°C for up to about four hours.

Inventors: DE ROO DAVID WILLIAM, STALLER STEVEN EDWARD, DE ROO, DAVID WILLIAM, STALLER, STEVEN EDWARD
Applicants: DELCO ELECTRONICS CORP, DELCO ELECTRONICS CORPORATION
Application year: 1991
Main classification: G01P15
IPC codes: G01P15