Ink jet recording head, substrate for said head and ink jet recording device

Abstract: A recording head equipped with a plurality of liquid discharge portions has a discharge opening for discharging ink, and a substrate provided with a plurality of electrothermal transducers for generating thermal energy to be utilized for discharging the ink supplied to the liquid discharging portions and a plurality of functional devices connected electrically to the electrothermal transducers. The plurality of functional devices are arranged in the direction from the arrangement direction of the plurality of electrothermal transducers within the region provided at the wiring portion including the common electrode wiring and the selective electrode wiring for said plurality of electrothermal transducers and the plurality of functional devices. The plurality of electrothermal transducers are arranged in the vicinity thereof to the common electrode wiring, the wiring portion is formed essentially at lower layer than the layer where the electrothermal transducers are formed.

Description: BACKGROUND OF THE INVENTION Field of the Invention This invention relates to a recording head of an ink jet recording device to be used for printer, video output printer, etc. as the terminal for output of copying machine, facsimile, word processor, host computer, a substrate for said head an ink jet recording device, particularly to an ink jet recording head having an electrothermal transducer for generating thermal energy as the energy to be utilized for discharging ink and a functional device for recording formed on or internally of the same substrate, a substrate for said head and an ink jet recording device. Related Background Art In the prior art, a recording head had a constitution, comprising an array of electrothermal transducers formed on a single crystal silicon substrate, functional devices for driving the electrothermal transducers such as a transistor, a diode array, etc. arranged externally of the silicon substrate as the driving circuit of the electrothermal transducers, with connection between the electrothermal transducers and the functional devices such as transistor array, etc. being done with flexible cable or wire bonding. For the purpose of simplifying the structure, or reducing defects occurring in the preparation steps, and further improving uniformization of the characteristics of the respective devices and reproduction of high quality head preparation, etc., there has been known an ink jet recording head having electrothermal transducers and functional devices provided on or internally of the same substrate as proposed in Japanese Laid-open Patent Application No. 57-72867. Fig. 11 is a schematic sectional view showing a part of the recording head having the construction as described above. 901 is a semiconductor substrate comprising a single crystal silicon. 902 is the collector region of an N-type semiconductor, 903 the ohmic contact region of an N-type semiconductor with a high impurity concentration, 904 the base region of a P-type semiconductor, 905 the emitter region of an N-type semiconductor with a high impurity concentration, and the bipolar transistor 920 is formed of these. 906 is a silicon oxide layer as the heat accumulation layer and the insulating layer, 907 a hafnium boride (HfB 2 ) as the heat-generating resistor layer, 908 an aluminum (Al) electrode, 909 a silicon oxide layer as the protective layer, and the substrate 930 recording head is constituted of all the members as mentioned above. Here, 940 becomes the heat generating portion. The ceiling plate 910 is bonded to 930, and sectionalizes the liquid channel communicated to the discharge opening 950A in co-operative fashion. The substrate for recording head with such constitution (heater board) is connected to functional device arrays such as the array of the heat generating portion (heater) 940 and the array of diodes or transistors for driving this through the matrix wiring portion arranged between these. However, in the constitution of the prior art, because the matrix portion and the functional device portion are arranged at the sites separated on the heater board, the following problems have been involved. i) The size of the heater board cannot be made small without accompaniment of performance deterioration. ii) Segment electrodes for driving selectively the heater are located outside of the width of the heater row, whereby the heater board size is larger corresponding thereto, and further continuous arrangement is also impossible. iii) Wiring resistance is large. iv) Since the distance from the heater to the functional devices for driving is not uniform, the resistance value correction is difficult. Also, since many wirings have been applied in the same layer (e.g. the second layer) as the heater layer, there have been such problems as follows: i) the second layer wiring cannot be made thick because the wiring resistance is made small by the influence of the protective layer of the heater; ii) the second layer comprises a double structure of both the heater material and the wiring material, and therefore if the second layer portion is much, the yield of bridges, etc. is poor. Further, there has been the problem that high precision is required for the film thickness of the respective layers, because the resistance value correction of the second layer wiring is done in the first layer. The substrate for recording head with such constitution (heater board) is connected to an array of the heat-generating portions (heater) 940 and an array of functional devices such as an array of diodes or transistors through a matrix wiring portion arranged between these. The functional device array portion is arranged on the heater board gradually departed as the first row, the second row,..... the nth row from the heater portion. Therefore, since the distance between the heater portion and the functional device array portion is different for each row, the normal direction voltage of the functional device such as diode or transistor tends to be larger as remote from the heater portion (the substrate temperature becomes lower) depending on the temperature distribution of the heater board, particularly involving the problem that its variance is greater as the temperature of the heater board becomes higher in printing for a long time, etc. to have deleterious effect on printing quality. Reference is made to our U.S. Patent No. 4429321 which discloses a liquid jet recording device comprising a plurality of heat actuating chamber portions communicating with ejecting orifices for ejecting a liquid to form flying droplets, an electrothermal transducer provided for each heat actuating chamber portion so as to transfer heat effectively to the liquid filling the heat actuating chamber portion, and a driving circuit portion comprising a plurality of function elements for separating signals to drive independently each of the electrothermal transducers and for driving the electrothermal transducers. The plurality of electrothermal transducers and the plurality of function elements are structurally formed in the surface of a substrate, or the plurality of electrothermal transducers are mounted on the surface of a substrate in the surface of which the function elements are formed, and the electrothermal transducers are mounted in a form of a laminating structure. According to one aspect of the present invention there is provided a recording head having a liquid discharge portion with a liquid discharge opening, and a substrate provided with a plurality of electrothermal transducers for generating thermal energy and with a plurality of corresponding functional devices electrically connected to said electrothermal transducers, characterised in that at least some of said plurality of functional devices are located at different distances from the corresponding electrothermal transducers and functional devices located at different distances from the corresponding electrothermal transducers have different characteristic saturated voltage versus temperature curves, corresponding to the distance from said electrothermal transducers. According to another aspect of the present invention there is provided a substrate for a recording head provided with a plurality of electrothermal transducers for generating thermal energy, and with a plurality of functional devices electrically connected to corresponding electrothermal transducers, characterised in that at least some of said plurality of functional devices are located at different distances from the corresponding electrothermal transducers and functional devices located at different distances from the corresponding electrothermal transducers have different characteristic saturated voltage versus temperature curves, corresponding to the distance from said electrothermal transducers. Embodiments of the present invention will now be described, by way of example, with reference to the accompanying drawings, in which: Figs. 1A, 1B and 1C are included for reference purposes only and show, respectively, a schematic plan view showing the substrate for recording head, a sectional view schematically shown of its wiring portion, and an electrical circuit diagram of the respective portions on the substrate; Figs. 2A and 2B are respectively a perspective view and its sectional view along the line E-E' in Fig. 2A of the substrate of Fig. 1A; Figs. 3A to 3K are schematic sectional views for illustration of the process for preparing a recording head having the substrate shown in Fig. 1A; Fig. 4A is a schematic plan view showing the substrate for a recording head embodying the invention; Figs. 4B and 4C are illustrations for explanation of the characteristics of the functional device embodying the present embodiment; Fig. 4D is a sectional view schematically shown of the wiring portion f the substrate according to an embodiment of the present invention; Figs. 5A and 5B are respectively illustrations for explanation of other embodiments of the present invention; Fig. 6 is an exploded constitutional perspective view of a cartridge constitutable by application of a recording head embodying the present invention; Fig. 7 is an assembled perspective view of Fig. 6; Fig. 8 is a perspective view of the mounting portion of the ink jet unit in Fig. 6; Fig. 9 is an illustration of mounting for the device of the cartridge shown in Fig. 6; Fig. 10 is an appearance view of the device to which the cartridge shown in Fig. 6 is applied; Fig. 11 is a schematic sectional view of the recording head of the prior art. Fig. 1A shows an example of wiring arrangement on the substrate (silicon substrate) of the ink jet recording device included for reference purposes. Here, the wiring comprises a first layer wiring which becomes the lower layer wiring, a second layer wiring which becomes the upper layer wiring and a thruhole SH which connects electrically them. In Fig. 1A, 1-101 is a common electrode with the first layer wiring, which is connected to the common wiring 1-102. The common wiring 1-102 is connected to one of the electrothermal transducers 1-104 juxtaposed laterally in an array through the thruhole via the 1-105 common side take-out wiring with the first layer wiring. The electrothermal transducer 1-104 is formed of a heat generating resistance layer and a second wiring, and connected via the segment side take-out wiring 1-105 to the anode electrode 1-106 of the diode 1-113 which is used as the functional device for driving the electrothermal transducer through the thruhole, the second layer wiring, and the thruhole. The cathode electrode 1-107 of the diode is connected through the thruhole to the segment lateral wiring 1-108. The segment lateral wiring is connected via the thrunole 1-109 to the longitudinal wiring 1-110 with the first layer wiring, and the segment longitudinal wiring to the segment electrode 1-111. In this Figure, an example with a number of 8 segments of the electrotransducers within one block is shown, and particularly those at the both ends are shown in the drawing. Here, 8 diodes utilized as the functional devices are juxtaposed in the longitudinal direction in Fig. 1A along the arrangement direction of the segment lateral wiring. When the diodes juxtaposed in this manner are actuated, for prevention of erroneous actuation of adjoining mutual diodes, isolation electrodes 1-112 are arranged around the diodes to form an isolation region. Next, actuation of the ink jet recording device having the substrate of Fig. 1A is described. For driving the resistor 1-104 in a desired electrothermal transducer, the common electrode 1-101 and the segment electrode 1-111 are selected. A pulse for driving passes through the common electrode 1-101 to the common wiring 1-102, the common side take-out wiring 1-103, the electrothermal transducer 1-104, and further through the segment side take-out wiring 1-105 to the anode electrode 1-106 of the diode. Further, passing through the diode, from the diode cathode electrode 1-107, through the segment lateral wiring 108 and the thruhole 1-109, further passing through the segment longitudinal wiring 1-110 and via the segment electrode 1-111, the pulse flows to the external portion. At this time, because a diode structure is constructed on the P-type silicon substrate for prevention of diode erroneous actuation, the isolation electrode 1-112 is earthed. Here, a driving pulse is added to the electrothermal transducer and the resistor generates heat, whereby the ink immediately thereon is heated to be formed, thereby forming discharging ink droplets. Here, connection of the electrothermal transducer with the diode as the functional device for driving, and driving of the electrothermal transducer are described in more detail. Fig. 1B is a sectional view of the substrate shown in Fig. 1A with its wiring portion schematically shown. As described below by referring to Fig. 2B, the collector base common electrode 12 corresponds to the anode of the diode (1-106 in Fig. 1A), and the emitter electrode 13 to the cathode (1-107 in Fig. 1A). During driving of the electrothermal transducers (RH1, RH2), by applying a bias (V H1 ) of positive potential on the electrothermal transducer connected to the collector base common electrode 12, the NPN transistor within the cell turns on, and the bias current flows out from the emitter electrode 13 as the collector current and the base current. As the result of the constitution having the base and the collector made short circuited as in the present embodiment, stand-up, stand-down characteristics of heat of the electrothermal transducer were improved, whereby occurrence of film boiling phenomenon and controllability of growth and shrinkage of bubbles accompanied therewith were improved, thereby effecting stable discharging of ink. This may be considered to be due to the fact that in an ink jet recording head utilizing thermal energy, the characteristics of the transistor are deeply related with the characteristics of film boiling, and because of small accumulation of small number of carriers in the transistor, the switching characteristic is rapid to improve the stand-up characteristic, thus having unexpectedly great influences. Also, there is comparatively less parasitic effect without variance between the devices, whereby a stable driving current can be obtained. Further by earthing the isolation electrode 14, inflow of charges into adjoining other cells can be prevented to prevent the problem of erroneous actuation of other devices. In such semiconductor device, it is desirable to make the impurity concentration in the N-type collector embedding region 2, 1 x 10 19 cm -3 or higher, the impurity region in the base region 5, 5 x 10 14 to 5 x 10 7 cm -3 , and further the area at the bonded face between the high concentration P-type base region 8 and the electrode as small as possible. By doing so, generation of the leak current dropping from the NPN transistor via the P-type silicon substrate 1 and the isolation region to GND can be prevented. The driving method of the above recording head is described in more detail. In Fig. 1B, only two semiconductor functional devices (cells) are shown, but practically such devices correspond to the electrothermal transducers in the number as shown in Fig. 1C to be arranged in the same number and electrically matrix connected so as to be block drivable (see Fig. 1C). The common electrodes (com1, ... com8) and selective electrodes (seg1, ... seg8) are arranged alternately on the substrate. Here, driving of the electrothermal resistant devices RH1 and RH2 as two segments in the same group is described. For driving of the electrothermal transducer RH1, first the group is selected by the switch G1 (the common side switch), and also the electrothermal transducer RH1 is selected by the switch S1 (the segment side switch) to apply a positive voltage V H1 . Then, the diode cell SH1 with a transistor constitution is positively biased, whereby a current flows out from the emitter electrode 13. Thus, the electrothermal transducer RH1 generates heat, which heat energy causes the liquid to undergo a state change and generate bubbles, thereby discharging the liquid through the discharge opening. Similarly, when the electrothermal transducer RH2 is driven, the switch G1, the switch S2 are selectively turned on to drive the diode cell SH2, thereby supplying a current to the electrothermal transducer. At this time, the substrate 1 is earthed through the isolation regions 3, 6, 9. Thus, by earthing of the isolation regions 3, 6, 9 of the respective semiconductor devices (cells), erroneous actuations through electrical interference between the respective devices are prevented. Fig. 2A is a schematic perspective view of a recording head by use of the substrate constituted as outlined above. Such head, as shown in the Figure, has a plurality of discharge openings 500, liquid channel wall members 501 comprising a photosensitive resin, etc. for forming the liquid channels communicated to the discharge openings, ceiling plates 502 and ink supplying openings 503. The liquid wall member 501 and the ceiling plate 502 can be also integrally formed by utilizing a resin mold material. Next, the substrate and its wiring portion are described in more detail. Fig. 2B is a schematic sectional view of this substrate for recording head and its wiring portion, namely a sectional view along the line E-E' in Fig. 2A. In the Figure, 1 is a P-type silicon substrate, 2 an N-type collector embedding region for constituting a functional device, 3 a P-type isolation embedding region for functional device separation, 4 an N-type epitaxial region, 5 a P-type base region for constituting the functional device, 6 a P-type isolation region for device separation, 7 an N-type collector region for constituting the functional device, 8 a high concentration P-type base region for constituting the device, 9 a high concentration P-type isolation region for device separation, 10 an N-type emitter region for constituting the device, 11 a high density N-type collector region for constituting the device, 12 a collector base common electrode, 13 an emitter electrode, and 14 an isolation electrode. Here, NPN transistors SH1, SH2 are formed, and the collector regions 2, 7, 11 are formed so as to surround completely the emitter region 10 and the base regions 5, 8. Also, as the device separation region, the respective cells are surrounded by the P-type isolation embedding region 3, the P-type isolation region 6 and the high concentration P-type isolation region 9 to be electrically separated. In this recording head 100, on the substrate having the driving portion described is provided an SiO 2 film 101 by thermal oxidation, and on the heat accumulation layer 102 comprising a silicon oxide film according to the CVD method or the sputtering method, etc. an electrothermal transducer 110 constituted of a heat-generating resistance layer 103 of HfB 2 , etc. according to the sputtering method and an electrode 104 of Al, etc. Heat-generating resistance layers 103 such as HfB 2 , etc. are also provided between the collector base common electrode 12 and the emitter electrode 13 and the wirings 202 and 201 such as of Al, etc. As the heat-generating resistance layer, there may be employed otherwise Pt, Ta, ZrB 2 , Ti-W, Ni-Cr, Ta-Al, Ta-Si, Ta-Mo, Ta-W, Ta-Cu, Ta-Ni, Ta-Ni-Al, Ta-Mo-Ni, Ta-W-Ni, Ta-Si-Al, Ta-W-Al-Ni, Ti-Si, W, Ti, Ti-N, Mo, Mo-Si, W-Si, etc. Further, on the heat-generating portion 110 of the electrothermal transducer are provided a protective layer 105 such as SiO 2 , etc. according to sputtering or the CVD method and a protective film 106 such as Ta, etc. Here, the SiO 2 film forming the heat accumulation layer 102 is provided integrally with the interlayer insulating film between the lowest layer wirings 12, 14 and 201 and 202 as the intermediate wirings. As for the protective layer 105, it is also similarly integrated with the interlayer insulating film between the wirings 201 and 202. Next, by referring to Figs. 3A - 3K, the preparation steps for forming this recording head are described. (1) On the surface of a P-type silicon substrate 1 with an impurity concentration of about 1 x 10 12 to 10 16 cm -3 a silicon oxide film with a thickness of about 5000 to 20000 Å. The silicon oxide film at the portion where the collector embedding regions 2 of the respective cells was removed by the photolithographic step. An N-type impurity, for example, P, As, etc. was injected, and by thermal diffusion an N-type collector embedding region 2 with an impurity concentration of 1 x 10 19 cm -3 or more was formed to a thickness of 10 to 20 µm. At this time, the sheet resistance was made 30 Ω/□ or less. Subsequently, the oxide film where the P-type isolation embedding region 3 is to be formed was removed to form a silicon film with a thickness of about 100 to 3000 Å, and then the P-type impurity, for example, B, etc. was ion injected and by thermal diffusion, a P-type isolation embedding region 3 with an impurity concentration of 1 x 10 17 to 10 19 cm -3 was formed (see Fig. 3A). (2) After removal of the oxide film on the whole surface, an N-type epitaxial region 4 with an impurity concentration of about 1 x 10 12 to 10 16 cm -3 was epitaxially grown to a thickness of about 5 to 20 µm (see Fig. 3B). (3) Next, on the N-type epitaxial region surface was formed a silicon oxide film of about 100 to 300 Å, a resist was coated, the oxide film was subjected to patterning and ions of the P-type impurity were injected only into the region where the low concentration base region 5 is to be formed. After removal of the resist, by thermal diffusion, the low concentration P-type base region 5 with an impurity concentration of 5 x 10 14 - 5 x 10 17 cm -3 was formed to a thickness of 5 to 10 µm. Again the oxide film was removed from the whole surface, and after formation of a silicon oxide film with a thickness of about 1000 to 10000 Å, the oxide film in the region where the P-type isolation region 6 is to be formed was removed, followed by deposition of a borosilicate glass (BSG) film on the whole surface by use of the CVD method. Further, by thermal diffusion the P-type isolation region 6 with an impurity concentration of 1 x 10 18 to 10 20 cm -3 was formed to a thickness of about 10 µm so as to reach the P-type isolation region 3 (see Fig. 3C). Here, it is also possible to form BBr 3 as the diffusion source. (4) After removal of the BSG film, a silicon oxide film with a thickness of about 1000 to 10000 Å was formed, and further after removal of the oxide film only in the region where the N-type collector region 7 is to be formed, an N-type impurity such as phosphorus is thermally diffused or P + ions are injected, and by thermal diffusion the N-type collector region 7 was formed so as to reach the collector embedding region 5. The sheet resistance at this time was made a low resistance of 10 Ω/□ or lower. The thickness of the region 7 was made about 10 µm, and the impurity concentration 1 x 10 18 to 10 20 cm -3 . Subsequently, after removal of the oxide film in the cell region, a silicon oxide film of 100 to 300 Å was formed, and the oxide film was subjected to patterning by use of a resist, followed by ion injection of a P-type impurity only into the region where the high concentration base region 8 and the high concentration isolation region 9 are to be formed. After removal of the resist, the oxide film in the region where the N-type emitter region 10 and the high concentration N-type collector region 11 are to be formed was removed, and a PSG film was formed on the whole surface, followed by injection of N + . Then, by thermal diffusion, the high concentration P-type base region 8, the high concentration P-type isolation region 9, the N-type emitter region 10, the high concentration N-type collector region 11 were formed at the same time. The thickness of each region was made 1.0 µm or less and the impurity concentration 1 x 10 19 to 10 20 cm -3 (see Fig. 3D). (5) Further, after formation of the silicon oxide film 101, the silicon oxide film at the connecting portion was removed and Al, etc. except for the electrode region was removed to form electrodes 12, 13. At this time, through the isolation region 9, the wiring 14 to be electrically connected to the substrate 1 was also formed. Also, the common wiring 1-102, the segment longitudinal wiring 1-110, the segment take-out wiring 1-105 were formed at predetermined sites (see Fig. 3E). (6) According to the sputtering method, the SiO 2 film 102 which becomes the heat accumulation layer and the interlayer insulating film was formed on the whole surface to a thickness of about 0.4 to 1.0 µm. The SiO 2 film may be also formed according to the CVD method. Next, for taking electrical connection, the predetermined wiring portions (1-102, etc.), the emitter region and a part of the insulating film corresponding to the upper part of the base-collector region CH were opened by the photolithographic method (see Fig. 3F). (7) Next HfB 2 as the heat-generating resistance layer 103 was formed on the SiO 2 film 102, and for taking electrical connection, on the electrode at the upper part of the emitter region and the electrode at the upper part of the base-collector region, and further deposited on the predetermined wiring portions to a thickness of about 1000 Å, followed by patterning (see Fig. 3G). (8) On the patterned layer were deposited a pair of electrodes 104 of the electrothermal transducer, the cathode electrode wiring 201 and a layer comprising an Al material as the electrode wiring 202, followed by patterning, to form the electrothermal transducer and other wirings at the same time (see Fig. 3H). Here, between the heat-generating resistance layer 103 and the Al electrodes 12, 13, 14 which are lower layers and/or between the heat-generating resistance layer 103 and the Al electrodes 104, 201 and 202 which are upper layers, it is desirable to interpose Ti as the layer for improving adhesion between HfB 2 and Al. For example, when Ti is interposed between the former, after formation of the thruhole for the Al electrode of the lower layer, Ti may be deposited to a thickness of 30 to 40 Å according to the sputtering method HfB 2 deposited thereon, further Al 201, 202 of the upper layers deposited thereon, and then Al subjected to patterning by wet etching, followed by patterning of Ti and HfB 2 by dry etching. (9) Then, the SiO 2 film 105 as the protective layer of the electrothermal transducer was deposited according to the sputtering method (Fig. 3I). (10) On the upper part of the heat-generating portion of the electrothermal transducer, Ta was deposited as the protective layer 106 for cavitation resistance to a thickness of 2000 Å (Fig. 3J). (11) On the substrate having the electrothermal transducer, the semiconductor device prepared as described above, a liquid channel wall member and a ceiling plate 502 were arranged to form an ink channel 500A communicated to the discharge opening 500, thereby preparing the recording head (Fig. 3K). For such recording head, recording, actuation tests were conducted by block driving the electrothermal transducer. In the actuation test, eight semiconductors were connected to one segment and currents each of 300 mA (total 2.4 A) were permitted to flow, and other semiconductor diodes could perform good discharging without erroneous actuation. Fig. 4A shows a wiring arrangement embodiment on the substrate (silicon substrate) of an ink jet recording device according to an embodiment of the present invention. Here, the wiring comprises a first layer wiring which becomes the lower layer wiring, a second layer wiring which becomes the upper layer wiring, and a thruhole for connecting electrically these. In Fig. 4A, 1-101 is the common electrode with the first layer wiring, and connected to the common wiring 1-102. The common wiring 1-102 is connected to one of the electrothermal transducers 1-104 juxtaposed laterally in an array through a thruhole via the take-out wiring on the 1-105 common side with the first layer wiring. The electrothermal transducer 1-104 is formed of a heat generating resistance layer and the second layer wiring, and via the segment side take-out wiring 1-105 of the first layer wiring, is connected to the anode electrode 1-106 of the diode 1-113 used as the functional device for driving the electrothermal transducer through the thruhole, the second layer wiring, and via the thruhole through the anode electrode 1-106. The cathode electrode 1-107 of the diode is connected to the segment lateral wiring 1-108 with the second layer wiring through the thruhole. The segment lateral wiring is connected via the thruhole 1-109 to the segment longitudinal wiring 1-110 with the first layer wiring, and the segment longitudinal wiring to the segment electrode 1-111. In the present Figure, one with the number of electrothermal transducers within one block being made 8 segments is shown by way of example, particularly those at the both ends. Here, 8 diodes utilized as the functional device are juxtaposed in the longitudinal direction in Fig. 4A along the arrangement direction of the segment lateral wiring. When the diodes thus juxtaposed are actuated, for prevention of erroneous actuation of adjoining mutual diodes, the isolation electrode 1-112 for diode is arranged around the diodes to form an isolation region. As shown in Fig. 4A, in the present embodiment, the diode 1-113 is smaller in size as nearer to the heater 1-104. By use of Fig. 4B, the functional description of the means for correcting the thermal influence by changing the diode size is given based on the temperature distribution of the heater board and the temperature characteristics of the diode. In the Figure, the heater board 122 is shown with Fig. 4A being omitted, and equipped with the heater row 124 and the diode row 123. The heater board 120 is an example in which the individual diode sizes within the diode 121 are made uniform. The temperature distribution on A-A' of the heater board 120 is shown in the graph 〈I〉, and now when the heater is heated, it can be understood that the heater row 124 portion becomes the maximum temperature, and the temperature is lower as departed from that portion. Here, ΔT D is made the maximum temperature gradient when the heater is heated highest, T D1 , T D4 , T D8 the maximum temperature differences at the positions of the diodes D 1 , D 4 , D 8 , respectively, namely the temperature differences between when the heater is not heated and when the heater is heated highest. For convenience, three points of the positions of the diodes have been picked up, but the same principle is also applicable to description of D 2 , D 3 , D 5 , D 6 , D 7 . Next, the normal direction saturated voltages V F of the diodes D 1 to D 8 are shown in Fig. 4C. It can be understood that the diode has smaller V F as the temperature is higher. This is applied to the graph 〈II〉 in Fig. 5B, in which the axis of ordinate ΔT is set to be of the same scale as in the graph 〈I〉. Now, when the heater 124 is not heated and ΔT=0 , V D1 to V D8 have V F =V o , but when the heater board 120 becomes to have temperature gradient ΔT D , the temperature at the diode D 1 becomes T D1 , and therefore V F of the diode D 1 becomes V 1 . That of the diode D 8 is V 8 , whereby a V F difference ΔV 1-8 occurs between the diodes D 1 and D 8 . Next, the temperature characteristics of V F of the diodes D 1 ', D 4 ', D 8 ' of the diode row 123 on the heater board 122 are described by referring to the graph 〈III〉. The characteristics of the diodes D 1 , D 4 , D 8 become respectively V D1 ', V D4 ', V D8 ', which characteristics are made different by varying the diode size utilizing the fact that the voltage drop with the diode becomes greater as the diode size is smaller to increase V F . The diode size may be chosen in the manner so that the diodes D 1 , D 4 , D 8 may be equal in V F at 1/2 of the heater board maximum temperature gradient ΔTD, namely T D1 /2, T D4 /2, T D8 /2. V F at this time is defined as V o ', and corresponding to V o in the graph 〈III〉, the actuation points are determined for these in the graph. Now, when the heater board 122 is heated to create a temperature gradient of ΔTD, the V F 's of the diodes D 1 , D 4 , D 8 becomes respectively V 1 '', V 4 '', V 8 '' from the graph 〈III〉, with the V F difference between the diodes D 1 and D 8 being ΔV 1-8 ''. Here, by comparison between the graph 〈II〉 and the graph 〈III〉, it can be understood from the present embodiment that the temperature influence of the diode is 1/2. More specifically. ΔV 1-8 2 = ΔV 1-8 ' = ΔV 1-8 '' This is determined from the following formulae: V 1 2 = V 1 ' = V 1 '' , V 4 2 = V 4 ' = V 4 '' , V 8 2 = V 8 ' = V 8 '' Thus, by movement of the actuation point V o of the diode V F to V o ', dependency of the diode V F on the heater board temperature gradient can be suppressed to 1/2. Next, actuation of the ink jet recording device embodying the present invention is described. For actuation of the resistor 1-104 in the desired electrothermal transducer, the common electrode 1-101 and the segment electrode 1-111 are chosen. The pulse for driving through the common electrode 1-101 to the common wiring 1-102, the common side take-out wiring 1-103, the electrothermal transducer 104, and further through the segment side take-out wiring 1-105 to the anode electrode 1-106 of the diode. Further, passing through the diode, from the diode cathode electrode 107, the pulse passes through the segment lateral wiring 108, through the thruhole 1-109 and through the segment longitudinal wiring 1-110, and via the segment electrode 1-111 to the outside. Because a diode structure is constituted on a P-type silicon substrate for prevention of the diode erroneous actuation at this time, the isolation electrode 1-112 is earthed. Here, a driving pulse is applied to the electrothermal transducer, whereby the resistor generates heat to heat the ink immediately thereon to effect foaming, thereby forming discharge ink droplets. Here, connection of the electrothermal transducer with the diode as the functional device for driving thereof, driving of the electrothermal transducer, etc. are substantially the same as in the first embodiment described above about the preparation steps of the ink jet recording head. The constitution of the wiring portion may be also as shown in Fig. 4D. More specifically, in Fig. 4D, a positive bias voltage VH1 is applied on the collector-base electrode 12, and the current from the emitter electrode 13 flows to the electrothermal transducer RH1 or RH2. For such recording head, recording, actuation tests were conducted by block driving the electrothermal transducer. In the actuation tests, 8 semiconductor diodes were connected to one segment, and a current of 300 mA (total 2.4 A) was permitted to flow to each diode, and other semiconductors could perform good discharging without erroneous actuation. Fig. 5A shows one utilizing different characteristics of the diodes D 1 - D 8 in Fig. 4B. In the present embodiment, temperature correction was made by designing the diodes so as to have different temperature dependencies, and a diode having the characteristics of V D1 in the graph 〈II〉 with small temperature dependency is placed at D1 nearest to the heater row 124, a diode with higher temperature dependency placed as remote from the heater row 124, until a diode having the characteristic of V D8 is employed as D 8 . Now, similarly as in Fig. 4B, as shown in the graph 〈I〉 in Fig. 5A, by use of the diodes corresponding to the diode positions as in the graph 〈II〉 relative to the temperature gradient occurring on the heater board, the respective diodes V F will become the constant V F , giving rise to no difference in V F . Here, the gradient design of the diode V F can be made as follows. V F = (kT/q)ln(I F /I S ) I S = qs[D P P n /L P ) + (D n n P )/L n ] Here, k, q are constants, T is temperature, I F current, D P , D n are diffusion constants, n P , P n are small number carrier densities, L P , L n are distances to the points where the carrier density becomes l/e. More specifically, in the semiconductor process, the diodes D 1 - D 8 may be passed through the diffusion step as required, respectively. Fig. 5B shows an embodiment wherein application is changed from the one-dimensional arrangement as described above to the two-dimensional arrangement. The temperature distribution by heat generation at the heater row 124 on the heater board 125 is shown by T 1 - T 5 by the isothermal line representation. Therefore, for obtaining better temperature characteristics, in view of the two-dimensional arrangement, at the line where the temperature becomes the highest as the temperature T 1 , the diodes D 31 , D 41 , D 51 , D 61 are applied, which are subjected to the correction methods in the embodiment 1 and the embodiment 2. More specifically, V F actuation point movement correction or the V F gradient correction is applied more greatly, with correction being weakened as the temperature influence is weaker as T 2 to T 5 , until the correction amount is made the smallest at the outside of the temperature T 5 line, namely at the diodes D 16 , D 17 , D 18 , D 28 , D 87 , D 88 , D 78 . By doing so, V F correction becomes possible at better temperature. Here, the matrix is made l = m x n , and each diode is shown as Dmn. In addition, according to an embodiment of the present invention, by arranging diodes with different characteristic curves of normal direction saturated voltage for temperature such as making the size the diodes arranged in the region where the temperature on the heater board becomes higher, and the diodes arranged on the region with lower temperature larger, it becomes possible to make the difference in normal direction voltage of the diode according to the temperature distribution on the heater board without increase of the production, which in turn enables improvement of printing quality.

Claims: A recording head having a liquid discharge portion with a liquid discharge opening, and a substrate (1) provided with a plurality of electrothermal transducers (1-104) for generating thermal energy and with a plurality of corresponding functional devices (1-113) electrically connected to said electrothermal transducers, characterised in that at least some of said plurality of functional devices (1-113) are located at different distances from the corresponding electrothermal transducers (1-104) and functional devices located at different distances from the corresponding electrothermal transducers (1-104) have different characteristic saturated voltage versus temperature curves, corresponding to the distance from said electrothermal transducers. A recording head according to Claim 1, wherein the size of said functional devices (1-113) increases with increasing distance of the functional device from the corresponding electrothermal transducer (1-104). A recording head according to Claim 1, wherein the temperature dependency of the voltage across said functional devices increases with increasing distance of the functional device from the corresponding electrothermal transducer (1-104). A substrate for a recording head provided with a plurality of electrothermal transducers (1-104) for generating thermal energy, and with a plurality of functional devices (1-113) electrically connected to corresponding electrothermal transducers, characterised in that at least some of said plurality of functional devices (1-113) are located at different distances from the corresponding electrothermal transducers (1-104) and functional devices located at different distances from the corresponding electrothermal transducers (1-104) have different characteristic saturated voltage versus temperature curves, corresponding to the distance from said electrothermal transducers. A substrate for a recording head according to Claim 4, wherein the size of said functional devices (1-113) increases with increasing distance of the functional device from the corresponding electrothermal transducer (1-104). A substrate for a recording head according to Claim 4, wherein the temperature dependency of the voltage across said functional devices increases with increasing distance of the functional device from the corresponding electrothermal transducer (1-104). An ink jet recording device having a recording head according to claim 1, 2 or 3, a means (IJC) for supplying ink to said recording head, and a means for conveying a recording medium to a recording position of said recording head.

Inventors: ISHINAGA HIROYUKI, MORI TOSHIHIRO, SAITO ASAO, ISHINAGA, HIROYUKI, MORI, TOSHIHIRO, SAITO, ASAO, ISHINAGA, HIROYUKI, C/O CANON KABUSHIKI KAISHA, Mori, Toshihiro, c/o Canon Kabushiki Kaisha, SAITO, ASAO, C/O CANON KABUSHIKI KAISHA
Applicants: CANON KK, CANON KABUSHIKI KAISHA
Application year: 1991
Main classification: B41J2
IPC codes: B41J2