Method for growing a diamond or c-BN thin film

Abstract: The invention relates to a method for growing a thin epitaxial film selected from a diamond film and a c-BN film or a substrate by vapor phase synthesis comprising the steps of: (a) placing the substrate in a vacuum chamber; (b) heating the chamber to a temperature in the range 500 to 1200°C; (c) treating the substrate with a gaseous mixture selected from a chlorine containing gaseous mixture and a fluorine containing gaseous mixture; (d) evacuating the gaseous mixture; and (e) epitaxially growing the thin epitaxial film by introducing a feed gas under chemical vapor deposition conditions.

Description: FIELD OF THE INVENTION The present invention relates to a method of preparing improved diamond and c-BN films on a substrate. BACKGROUND OF THE INVENTION Semiconducting diamonds are drawing attention as new materials for use in semiconductor devices, including diodes, transistors and sensors. Diamonds are known widely today as good electrical insulators. However, the diamonds of interest in the present invention are semiconducting diamonds with low specific resistance. Diamond has a wide energy gap (5.5 eV) and a high carrier mobility (2,000 cm²/V·sec) and is both thermally and chemically stable. Thus, semiconducting diamonds hold significant promise as excellent materials for use in environmentally resistant, high-speed or power devices and blue light emitting devices. Semiconducting diamonds are available in three/types, natural bulk, high-pressure synthesized bulk and vapor-phase synthesized thin film. Diamonds of p-type are obtained by doping the diamond film with boron (B). Diamonds of n-type are obtained by doping the diamond film with phosphorus (P) or lithium (Li). The n-type diamonds possess high resistance. Low-resistance n-type diamonds are not yet to be obtained. Bipolar devices cannot be fabricated from semiconducting diamonds. However, Schottky diodes which make use of a Schottky junction between tungsten (W) and a p-type diamond, as well as several types of unipolar transistors are currently being fabricated in the laboratory. Methods which are commonly used to grow thin films of semiconducting diamonds include microwave plasma assisted CVD techniques and a hot filament assisted CVD techniques. In these methods, feed gases such as CH₄, CO and H₂ are decomposed using a microwave induced plasma or a hot filament. This results in the formation of thin diamond films on a heated substrate made of silicon (Si), molybdenum (Mo), diamond, etc. Addition of B₂H₆ to the feed gases allows thin films of p-type diamond can be obtained. Cubic boron nitride (c-BN) has also shown promise as a wide bandgap semiconductor. Specifically, c-BN is drawing attention as a material suitable for use in environmentally resistant devices, power devices and ultraviolet to blue light emitting devices. Like diamond, c-BN is also a material that has high chemical, thermal and physical stability. In addition, c-BN has a wide bandgap. Boron nitride (BN) is a compound made up of boron and nitrogen and is available in various structures including h-BN, t-BN and a-BN. Hexagonal boron nitride (h-BN) is easy to prepare. Cubic boron nitride systems (c-BN) are not easy to prepare. Doping with Be, produces p-type c-BN. Doping with S or Si produces, n-type c-BN. In order to fabricate devices which use semiconducting diamonds or c-BN, it is necessary to provide thin films of high-quality crystals with few dislocation and point defects. Conventionally, these films are formed by heating the substrate to a suitable temperature under a suitable degree of vacuum and introducing the feed gases immediately to grow a thin film. Fig. 2 illustrates the conventional process of forming a thin diamond film. The horizontal axis of the diagram in Fig. 2 plots time and the vertical axis plots the temperature of the substrate. Above the temperature profile are indicated the steps of the process, temperature elevation, growing the film, and temperature lowering. Two successive steps are differentiated by a vertical line. The gas or gases to be introduced are indicated in the space defined by the temperature line and the partition lines. After a suitable vacuum is drawn, H₂ gas is introduced into the vacuum chamber and the temperature is raised. When the substrate has been heated to an appropriate growth temperature, feed gases, CH₄, H₂ and optionally, B₂H₆, are introduced. B₂H₆ is added to the reaction when a p-type crystal is to be formed. The introduced gases are excited by microwaves, heat, a high-frequency plasma, and other excitation methods. This causes the feed gas to enter into a vapor-phase reaction. This reaction forms a thin film of diamond on the substrate. However, the thin films obtained by the use of these conventional methods of vapor-phase synthesis contain a fairly large number of defects. In thin films, those which are not thicker than 1 µm, the deterioration in the quality of the film is substantial. These low quality thin films make it impossible to fabricate devices that make use of the inherently good physical properties of the starting materials. As will be discussed hereinafter, this results because either impurities remain or oxide films form on the surface of the substrate. It is known in the art, for example, from prior art JP-63-121667, to employ a plasma, such as a H₂ plasma, to clean the surface of substrates. SUMMARY OF THE INVENTION Thus, it was an object of the present invention to prevent impurities or oxide films from remaining on the surface of the substrate and thus allow a high quality film to be fabricated. It was a further object of the present invention to provide a method of vapor-phase synthesis of a thin diamond or c-BN film that has a sufficiently high quality to justify their use in semiconductor and other suitable devices. The present invention solves such tasks by providing a method for growing a thin epitaxial film selected from a diamond film and a c-BN film comprising the steps set out in claim 1. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a diagram showing the program for thin film growth in accordance with the present invention. The horizontal axis of Fig. 1 plots time and the vertical axis plots the temperature of a substrate. The temperature profile is divided by vertical lines for the respective steps and the gas or gases to be supplied in the individual steps are also indicated. Fig. 2 shows a diagram of the conventional process for forming a thin diamond film. Fig. 3 shows a Schottky diode containing the film layers of the present invention. Fig. 4 shows the relationship between the number of etch pits in the diamond layer and the temperature for plasma pre-treatment. Fig. 5 shows the relationship between hole mobility and film thickness for plasma pre-treatment. Detailed Description of the Preferred Embodiments The present invention relates to a method of forming a thin film which involves the performance of a preliminary pre-treatment on the surface of a diamond or c-BN substrate with a nitrogen containing plasma prior to the growth of a thin diamond or c-BN film on the substrate. In the method of the present invention, the temperature of the substrate is elevated just prior to the growth of an epitaxial film in vacuum. Thereafter, a nitrogen containing plasma is introduced. This pre-treatment cleans the surface of the substrate. Subsequently, the nitrogen containing plasma is completely removed from the vacuum chamber and feed gases are introduced for thin film formation under film forming conditions. This results in the formation of epitaxial films of high quality. The reasons for the above are the following. When the thin-film crystals are grown on substrates, the state of the outermost surface of the substrate generally exerts substantial effects on the quality of thin layer. For Si and GaAs substrates, substrate control technology is already established. Thus, their surface state can be strictly controlled. However, for diamond and c-BN substrates, which are new semiconductors, the control of the substrate's surface is still unsatisfactory. Impurities such as grease and metals, which result from the grinding and polishing operation, will usually remain on the surface of diamond and c-BN substrates. In addition, in some cases, thin oxide films are formed on the substrate surface. Most of these surface contaminants can be removed by cleaning the substrates with various organic solvents or acids but it is difficult to remove them completely. The surfaces of substrates also contain work strains which occur when the substrates are polished with iron tools in order to permit reaction with iron to obtain a smooth surface. In this case, the resulting surface is apparently smooth but the microstructure is disturbed and has a graphite layer in it. If thin-film crystals are grown on such substrates, the residual impurities on the substrate can become sites for the initiation of the growth of abnormal nuclei or the occurrence of dislocations. Thus, contaminations on the substrate's surface will increase the number of defects in the resulting thin layer which is grown thereon. This contamination can also deteriorate the interface characteristics of a device which is fabricated using the grown layer. The same problems result from the presence of work strains. In order to obtain thin-film crystal layers of high quality, it is necessary to use a growth substrate that is free from contamination and work strain. As noted above, the outermost surfaces of diamond or c-BN substrates are not only contaminated with various impurities (e.g. grease and Fe) but also may contain work strains. These work strain defects cannot be completely removed by conventional methods of cleaning the substrates. If impurities were the only problem to consider, they could be removed by cleaning the substrate. However, the substrate can potentially be re-contaminated before it is set in the growth apparatus. To avoid these problems, a nitrogen containing plasma is introduced after the temperature of the substrate is elevated, prior to the growth of a thin diamond or c-BN layer on the substrate. This leads to the following results: (1) contaminations and impurities on the surface of the substrate are removed by the nitrogen containing plasma; and (2) the nitrogen containing plasma that is introduced at elevated temperatures lightly etch the surface of the substrate so as to remove any work strains in it. The growth of an epitaxial layer on the thus prepared, clean substrate, provides a diamond or c-BN layer that is thin but which yet has high quality. In particular, since the substrate is etched within a vacuum apparatus and is not taken out of it thereafter, there is no potential risk of re-contamination. Thus, the method of the present invention requires a preliminary treatment of the substrates with a nitrogen containing plasma. This pre-treatment allows stains and work strains to be efficiently removed from the surfaces of the substrates. The cleaned substrates allows deposition of thin films of diamond or c-BN of improved crystallinity. As a result, higher carrier mobilities can be attained while a smaller leak current will flow through a pn junction or a Schottky junction during application of a reverse bias. In Examples 1-14, only a Schottky junction is described but a pn junction can also be formed by incorporating dopants into the junction. The above described advantages are particularly apparent when the thickness of the grown layers decreases. Therefore, the present invention is extremely useful for the purpose of improving the characteristics of diodes, transistors and other semiconductor devices using diamond, c-BN or the junction between diamond and c-BN. The method of thin film growth of the present invention involves the use of a preliminary step which comprises elevating the temperature of a diamond or c-BN substrate in a growth apparatus and introducing a nitrogen containing plasma. The plasma, is then eliminated from the reaction vessel. Subsequently, feed gases are introduced in order to grow a thin film of diamond or c-BN. As noted above, the present method is characterized by growing a thin film of diamond or c-BN after the substrate is treated preliminarily with a nitrogen containing plasma. The preliminary treatment with a nitrogen containing plasma cleans and/or partially etches the surface of the substrate. This allows the growth of a single crystal thin film which has few defects. After the preliminary treatment, the substrate is not removed from the growth apparatus, so there is no chance of contamination from the ambient air. Fig. 1 shows a specific example of the method of thin-film growth of the present invention (for the case of growing a thin diamond film). The horizontal axis of the diagram shown in Fig. 1 plots time and the vertical axis plots the temperature of the substrate. Vertical lines in Fig. 1 separate one step from another, with the name of the separated steps being indicated above the temperature profile. The gas or gasses which are introduced into the vacuum chamber during a particular step are indicated within the enclosure associated with that particular step. The concept of the present invention is suitable for use with any method of epitaxial growth by vapor-phase synthesis. These include microwave assisted CVD, thermal CVD and r-f plasma assisted CVD techniques. Substrates suitable for use in the method of the present invention include diamond or c-BN. The present process is described in more detail as follows. The substrate is set on a holder in the vacuum chamber. A vacuum is drawn from the chamber. The substrate is heated with a heater, for example, or a microwave-induced plasma, while H₂ gas is introduced. After elevation of the temperature of the substrate, a nitrogen containing plasma is introduced to etch the surface of the substrate. For the sake of simplicity, the term "etching" is used here to describe the effect of the preliminary step. However, the action of the nitrogen containing plasma is a complex cleaning action both chemically and physically and may not be a simple etching action. The process temperature during the etching must be of the order of 500-1,200°C. A preferred temperature range is 800-1000°C. The process pressure may be subatmospheric or may alternatively be atmospheric, if diluent gases such as H₂, Ar and N₂ are used in large volumes. It should be noted that the presence of O₂ is undesirable when a diamond substrate is used. This is because the elevation of the substrate temperature in the presence of O₂ causes the substrate to be etched with O₂ which causes problems, such as surface roughening. In any atmosphere, diamond heated to a temperature of 1,300-1,400°C and above will undergo phase transfer to graphite. c-BN heated to temperatures of 1500°C and above will change to h-BN. As a result, heating diamond or c-BN substrates to these high temperatures should be avoided. According to the invention, the substrate is etched using a nitrogen containing plasma. Nitrogen in gaseous form is incapable of chemically etching the substrate. However, upon excitation to a plasma state, it is activated and becomes capable of etching and cleaning the substrate. In this embodiment, the substrate is first heated, with a heater or a microwave induced plasma, while H₂ gas is introduced, for its temperature becomes higher than the epitaxial growth temperature. Then, a nitrogen containing plasma is generated to etch the substrate. Any means of plasma generation may be employed. Suitable plasma sources include direct-current plasma, r-f plasma, microwave-induced plasma, capacitively coupled plasma, inductively coupled plasma and ECR (electron cyclotron resonance) plasma, etc. The desired cleaning results can be obtained by optimizing the conditions of the specific plasma-generating apparatus. These include gas flow rate, pressure, power to be supplied to the plasma, the temperature of the substrate, the bias voltage on the substrate and the processing time. The surface of the substrate cannot be thoroughly cleaned if the power supplied to the plasma is too low. On the other hand, if the power supplied to the plasma is too high, excessive etching occurs which roughens the surface of the substrate. It should be noted that the treatment with plasma is performed just prior to epitaxial growth on the substrate. That is, immediately before the formation of an epitaxial film in the growth chamber. If the substrate is etched in a separate chamber, it should be transferred to the growth chamber with the desired temperature and vacuum conditions being maintained. When etching the substrate with a nitrogen containing plasma, the cleaned substrate must not be taken out of the chamber where the etching has been performed. The subsequent film forming procedures are the same as in the conventional process of growing thin films of diamond or c-BN. First, feed gases, such as CH₄ + H₂ (B₂H₆ is also supplied if a p-type semiconductor is to be formed) are introduced into the vacuum chamber. A thin film is grown on the substrate with its temperature, pressure and other parameters being maintained at the appropriate values. When the growth of thin film is complete, the introduction of the feed gases is ceased and the temperature of the substrate is lowered. On the following pages, examples of the present invention are described when a nitrogen plasma is used as an etchant. Example 1 : Pre-treatment of the substrate with nitrogen or hydrogen plasma An undoped c-BN substrate produced by a high-pressure synthesis method was chosen as the substrate for this example. This substrate was subjected to a preliminary treatment with a nitrogen or hydrogen plasma and a thin film of diamond film was formed on the treated substrate. The thin diamond film was formed using a microwave plasma assisted CVD process using CH₄ + H₂ as feed gases. The program for thin film growth can be seen from Fig. 1. Prior to placing in a growth chamber, the c-BN substrate it was cleaned by sonication with an organic solvent, treated with fluoronitric acid and aqua regia, and rinsed with ultrapure water. The conditioned substrate was then place on a susceptor in a microwave plasma assisted growth apparatus. The vacuum chamber was closed and a vacuum was drawn. The substrate was then heated using a microwave induced plasma while H₂ gas was passed over the substrate. During the treatment with microwave plasma, the temperature of the substrate was held slightly above the growth temperature. The plasma treatment was performed in the same space of the vacuum chamber the diamond layer was to be grown. The microwave induced plasma was generated using one or more of the following gases: H₂, N₂, Ar and O₂ gases. The conditions of plasma treatment were as follows: Conditions of plasma treatment Gas flow rate (H₂, N₂, Ar or O₂) : 50 - 300 sccm Pressure : 1.33-53 mbar (1 - 40 Torr) Microwave power : 50 - 800 W Process time : 10 - 60 min Without the use of a separate heater, the temperature of the substrate was elevated to about 500 - 1,200°C using the microwave induced plasma. After the plasma treatment, a thin film of diamond was grown on the c-BN substrate within the same vacuum chamber without allowing any drop in the temperature. The conditions for the diamond film growth were as follows. Feed gas : CH₄, H₂ (CH₄/H₂ = 6%) Growth pressure : 53 mbar (40 Torr) Substrate temperature : 850°C Microwave power : 400 W When a thin film of p-type diamond was to be formed, on the substrate, B₂H₆ was introduced in addition to the CH₄ and H₂ (B₂H₆/CH₄ = 50 ppm). In order to demonstrate the effectiveness of the preliminary treatment of the substrate with a H₂ or N₂ gas plasma, the effect of a change in plasma power, the dependence of carrier mobility on film thickness for two different cases (one being the case where a plasma treatment was conducted), and the effect of the change in the type of gas used in the preliminary treatment were examined. (1) Effect of plasma power variation. The power of the microwave used to form the H₂ plasma was varied from 100 to 800 W and the resulting effects on the diamond layer were examined. The conditions of the H₂ plasma treatment are shown below. The temperature of the substrate increased with the microwave power and it was about 550°C when the microwave power was 100 W and about 1,200°C when the microwave power was 800 W. The epitaxial layer which was grown was a (100) oriented film of undoped diamond with a thickness of about 2 µm. The crystallinity of the grown layer was evaluated in terms of etch pit density. Etch pits were formed by treating the layer with molten KNO₃ (600°C). This treatment was undertaken for 1 h. The relationship between the etch pit density of the thin layer and the microwave power is shown in Fig. 4. The horizontal axis of the graph Fig. 4 plots the plasma power (W) and the vertical axis plots the etch pit density (cm⁻²). The value obtained when no H₂ plasma treatment was conducted is shown at the left end of the graph. When no plasma pre-treatment was performed, the etch pit density was on the order of 10⁻⁸ cm⁻². When the power was 200 W, the etch pit density decreased to about 3 X 10⁻⁷ cm⁻². With a plasma power of 400 W, the etch pit density decreased to minimum levels of about 1 - 2 X 10⁷ cm-². Beyond 400 W the etch pit density increased with the plasma power. At a plasma power of 800 W, the etch pit density was 6 X 10⁷ cm⁻². Fig. 4 shows that the etch pit density of the grown layer could be significantly reduced by treating the substrate with an H₂ plasma at plasma powers between 200 - 700 W. With H₂ plasma pre-treatment at plasma powers of about 300 - 600 W, the etch pit density could be reduced to a level 1/2 - 1/6 of the value obtained in the absence of H₂ plasma treatment, when a feed gas CH₄ was introduced at the moment the temperature of the substrate rose to a desired level, in accordance with the growth program shown in Fig. 2. This shows that the H₂ plasma treatment is effective in improving the crystallinity of a growth diamond layer. If the microwave power is excessive (800 W in the example under consideration), the H₂ plasma treatment roughens the surface of the substrate and is therefore incapable of improving the crystallinity of the grown layer. (2) Relationship between film thickness and the hole mobility of the grown layer with or without N₂ plasma treatment The hole mobility of a boron-doped p-type (B = 5 - 30 X 10¹⁴ cm⁻³) diamond layer was measured for a variety of thicknesses. The hole mobility was examined in films grown on substrates when a N₂ plasma treatment was conducted (N₂ flow rate, 100 sccm; pressure, 39 mbar (30 Torr); microwave power, 400 W; process time, 15 min) and in films grown on substrates where no plasma treatment was conducted. The measurements were conducted using a (100) oriented c-BN substrate. The profile of the relationship between hole mobility and the film thickness is shown in Fig. 5. The horizontal axis of the graph in Fig. 5 plots the thickness of the grown diamond layer (µm) and the vertical axis plots the hole mobility (cm²/V.sec); o refers to the case where N² plasma treatment was conducted and · refers to the case where no N₂ plasma treatment was conducted. In the absence of N₂ plasma treatment, the hole mobility decreased rapidly as the thickness of the grown layer decreased. This occurs because stains and work strains on the surface of the substrate exert stronger effects on the quality of the thin film grown on that substrate when the film is thinner. However, the relationship between the hole mobility and the film thickness was improved when N₂ plasma treatment was used on the substrate mobilities of about 120 cm²/V·sec were obtained, even in films as thin as 0.2 - 0.5 µm. These values were three to four times as great as those obtained when no N₂ plasma pre-treatment was performed. In thicker (2 - 3µm) films, higher mobilities were also obtained in films grown on substrate subjected to plasma treatment. In order to investigate the electrical characteristics of the thin film prepared by the method of Example 1 , a Schottky diode having the structure shown in Fig. 3 was fabricated using a film sample with a thickness of 1 µm. A p-type diamond layer 2 was grown on a diamond substrate 1 and a tungsten (W) Schottky electrode 3 and a titanium (Ti) ohmic electrode 4 were provided on the diamond layer 2. A diode was formed between the Schottky electrode and the grown, p-type diamond layer. The characteristics of a diode can be evaluated in terms of a quality factor and reverse leak current. The power of e (the base of natural logarithm) in the mathematical expression for current I flowing through a diode contains a coefficient qV/nkt, where q is the quantity of electric charge, V is the voltage applied to the pn junction, k is the Boltzman constant, and T is the temperature in Kelvin. The quality factor is represented by n in the coefficient and the diode characteristics are ideal when n = 1. As n becomes greater than unity, the forward current flowing at a given voltage will decrease. Needless to say, the reverse leak current should be as small as possible. The quality factor (value of n) of the Schottky diode and the leak current flowing at a reverse bias of 50 V were measured for both N₂ plasma treated cases and non N₂ plasma treated cases. The results are shown in Table 1. Table 1: Quality factor and leak current for the case where the substrate was subjected to N₂ treatment and for the case where no N₂ treatment was performed As Table 1 shows, the crystallinity of a grown diamond layer was improved by performing N₂ plasma treatment on the substrate. This allowed the construction of an improved Schottky diode which had small values of n and leak current. (3) Effect of the type of gas used for the plasma in the preliminary treatment (Examples 2-14) The effectiveness of plasma treatment was investigated by treating the surface of the substrate with plasmas generated from a variety of gases. After performing the preliminary treatment on the substrate for 20 min using these gases at a variety of microwave powers and pressures, thin films of B-doped, p-type diamond were grown epitaxially to a thickness of 1 µm under the same conditions as used in Example 1. The results of measurements of hole density and mobility in the grown layers are shown in Table 2. Conditions of preliminary treatment Evaluation of grown layer Gas Pressure mbar (Torr) Microwave power W Hole density cm⁻³ Mobility cm²/V.S. Ex.2 H₂ 7 (5) 300 3.3 X 10¹⁴ 76 Ex.3 H₂ 53 (40) 200 3.9 X 10¹⁴ 88 Ex.4 H₂ 53 (40) 500 2.6 X 10¹⁴ 91 Ex.5 N₂ 7 (5) 300 5.6 X 10¹⁴ 110 Ex.6 N₂ 13 (10) 300 7.3 X 10¹⁴ 102 Ex.7 N₂ 53 (40) 300 7.0 X 10¹⁴ 128 Ex.8 N₂ 53 (40) 600 9.1 X 10¹⁴ 136 Ex.9 H₂+N₂ 53 (40) 500 8.6 X 10¹⁴ 153 (1 : 1) Ex.10 Ar 7 (5) 500 0.95 X 10¹⁴ 41 Ex.11 Ar 53 (40) 500 1. 2 X 10¹⁴ 31 Ex.12 N₂+Ar 53 (40) 500 4. 7 X 10¹⁴ 96 (1 : 1) Ex.13 O₂ 13 (10) 200 1. 5 X 10¹⁴ 33 Ex.14 O₂ 53 (40) 400 0.80 X 10¹⁴ 28 Comp. Ex. No preliminary treatment 1. 1 X 10¹⁴ 39 As can be seen from Table 2, the epitaxial layers grown on the substrates pre-treated with H₂ or N₂ plasmas had higher hole densities and mobilities than when no preliminary treatment was conducted or when the preliminary treatment was conducted with Ar or O₂ plasma. This allowed the fabrication of semiconductor devices that were faster and that permitted a larger current to flow. The same, improved results, were obtained when the preliminary treatment was conducted with a H₂ + N₂ plasma, a N₂ + Ar plasma or other H₂ + N₂ plasma sources. While the foregoing description of these Examples also centers on the growth of a thin diamond film, it should be understood that the preliminary treatment conducted in accordance with the present invention is equally effective in permitting the growth of improved quality thin c-BN films.

Claims: A method for growing a thin epitaxial film selected from a diamond film and a c-BN film on a substrate by vapour-phase synthesis comprising the steps of: (a) selecting the substrate from one of diamond and c-BN; (b) placing the substrate in a vacuum chamber; (c) elevating the temperature of the chamber to a temperature in the range 500 to 1200°C; (d) treating the substrate with a nitrogen containing plasma; (e) evacuating the plasma source gaseous mixture; (f) expitaxially growing the thin epitaxial film by introducing a feed gas under chemical vapour deposition conditions. A method as claimed in claim 1 wherein said plasma is induced with microwave power of 200-700 W. A method as claimed in claim 2 wherein said plasma inducing microwave power is 300-600 W.

Inventors: FUJITA NOBUHIKO, KIMOTO TSUNENOBU, TOMIKAWA TADASHI, FUJITA, NOBUHIKO, KIMOTO, TSUNENOBU, TOMIKAWA, TADASHI
Applicants: SUMITOMO ELECTRIC INDUSTRIES, SUMITOMO ELECTRIC INDUSTRIES, LTD.
Application year: 1991
Main classification: C23C16
IPC codes: C23C16, C30B25