Process for preparing a semiconductor device including the selective deposition of a metal

Abstract: A process for preparing a semiconductor device comprises the step of surface modifying a desired portion of the surface of a substrate and the step of depositing selectively a metal on an electron-donative surface provided corresponding to the portion.

Description: BACKGROUND OF THE INVENTION Field of the Invention This invention relates to a process for preparing a device utilizing a semiconductor to be mounted on various electronic instruments, namely semiconductor device such as memory, photoelectric converting device, display device, signal processing device, etc. Related Background Art The main preparation steps of semiconductor device are the steps of forming a film of a metal, semiconductor, insulator, etc. on a substrate, and finely working the film to a desired pattern. In recent years, as represented by semiconductor memory device (memory), larger capacity and higher performances of functions of the device have rapidly advanced and accompanied therewith, the circuit pattern has become finer and the circuit structure more complicated. On the other hand, the display device such as liquid crystal display, plasma display, etc. is becoming increasingly larger, and the device function also more complicated. Accordingly, the film forming step and the etching step for performing fine working are the steps by using a solution or carrying out in vacuum and now primarily the so called dry steps by use of plasma or excited gas in reduced pressure gas. However, in the photolithographic process generally used for performing a desired fine working, complicated and cumbersome processes such as resist coating, pattern exposure, developing, etching, resist peel-off, etc. are employed. Among them, since solutions are employed in the resist coating, developing and resist peel off steps, they cannot be made dry processes. Also, the washing step and drying step after the solution treatment accompanied with these steps are required, whereby the steps are increased. Further, since a resist is employed, the resist is peeled off to increase generation of dust, whereby deterioration of device performance, lowering of yield will be brought about to increase the cost as a whole. For example, for formation of Al to be used primarily as the material for the electrode or wiring of the device, there has been employed the method in which Al film is deposited on the whole surface followed by etching to work into a desired pattern. As the deposition method of Al film, there has been used the sputtering method such as magnetron sputtering in the prior art. Whereas, generally speaking, the sputtering method is the physical deposition method based on flying of the particles sputtered from the target in vacuum, the film thickness at the stepped portion and the insulating film side wall becomes extremely thinner, even to be broken in an extreme case. Such nonuniform film thickness or breaking is the main cause for lower markedly reliability of LSI. For overcoming the problems as described above, various types of CVD (Chemical Vapour Deposition) methods have been proposed. In these methods, the chemical reaction of the starting gas in some form is utilised in the film forming process. This is caused by occurrence of decomposition of the starting gas in plasma CVD or optical CVD in gas phase, and the active species formed there further react on the substrate to effect film formation. For example, the decomposition of triethyl aluminium, diethyl aluminium hydride and diisobutyl aluminium hydride, either in vapour or in liquid phase, is discussed in the following article "Aluminium Coatings by the Decomposition of Alkyls", Thin solid films, 45 (1977) 257-263. In these CVD methods, where the reaction occurs in gas phase, surface coverage for unevenness on the substrate surface is better as compared with the sputtering method, but carbon atoms contained in the starting gas molecules may be incorporated into the film and also particularly in the plasma CVD, as in the case of the sputtering method, there is the damage with charged particles (so called plasma damage). In the hot CVD method, the film grows primarily through the surface reaction on the substrate surface,and therefore the surface coverage over unevenness such as stepped difference on the surface is good. For this reason, wire breaking at the stepped portion can be avoided. Also, there is no charge particle damage as in plasma CVD or the sputtering method. For this reason, as the method for forming Al film, hot CVD methods have been variously studied. For example, in the example seen in Journal of Electrochemical Society Vol. 131, p. 2175 (1984), by use of triisobutyl aluminum {(i-C 4 H 9 ) 3 Al} (TIBA) as the organic aluminum gas, a film with a 3.4µΩ·cm is formed by film formation under the conditions of a film forming temperature of 260 °C and a reaction tube pressure of 67 Pa (0.5 Torr). When TIBA is employed, no continuous film can be obtained, unless the treatment such as flowing of TiCl 4 to activate the substrate surface and form a nucleus is performed before film formation. Also, including the case of employing TiCl 4 , the surface flatness is generally poor when TIBA is employed. Japanese Laid-Open Patent Application No. 63-33569 discloses the method of forming a film by heating an organic aluminum in the vicinity of the substrate without use of TiCl 4 . In this case, the step of removing the naturally oxidized film on the substrate surface is required. Since TIBA can be used alone, and no carrier gas other than TIBA is required to be used but it is described that Ar gas may be also used as the carrier gas. However, no reaction of TIBA with other gases (e.g. H 2 ) is contemplated at all. This is because it is difficult to predict what kind of organic metal should be used and how it should be deposited, because the chemical properties of organic metals generally vary greatly when the organic substituent varies even if very little. In etching of Al, after-corrosion, namely corrosion of aluminum by generation of HCl through the reaction of Cl 2 or the reaction product (AlCl 3 , etc.) attached during etching by use of the chlorine type (Cl 2 , CCl 4 , etc.) gas with the moisture remaining in the air or the etching chamber occurs, thereby causing a great cause for breaking of wiring and electrodes. On the other hand, separately from these techniques, there is the method of irradiating selectively a light to the substrate surface according to the optical CVD method, thereby causing photochemical reaction to occur only at the irradiated surface to effect selectively deposition, but it is impossible to avoid occurrence of the reaction in gas phase at all, and deposition cannot but occur also at other portions than the irradiated site. Also, the deposition speed of optical CVD method is generally slow, and the deposition speed is smaller by about one cipher as compared with the hot CVD method. A process of the kind just mentioned is disclosed in the following article "Photochemical vapour deposition of Aluminium Thin Films using Dimethylaluminium Hydride" by M. Hanabusa et al, Japanese Journal of Applied Physics, Vol. 27 (1988) August, No. 8, pages L1392-L1394, which process includes preparing a patterned layer of aluminium on a surface of a substrate by depositing aluminium selectively from a vapour phase that includes an alkylaluminium hydride, specifically dimethylaluminium hydride. The selective pattern is defined using an illuminated mask or is written directly by laser. Examples are given of forming aluminium on n-doped (100) silicon and on quartz. However, as described above, in the steps of the prior art, these remain much room to be improved for corresponding to further higher integration and performances of semiconductor devices. The present invention has been accomplished in view of the technical problems described above, and is to provide a process which can deposit aluminium of high quality as the electroconductor with high selectivity and good yield without use of a resist. The following process can form an aluminium film of good quality without generation of dust and also with improved yield according to simplified steps, because of using no resist. The process according to the present invention is characterised by steps of selectively irradiating the semiconductor or metal surface of a substrate in an oxidising atmosphere of gas containing oxygen atoms or a nitriding atmosphere of gas containing nitrogen atoms and substantially no oxygen atoms, to form, by photochemical reaction, an area of an oxide or of a nitride, respectively, of said semiconductor or metal, leaving unirradiated a patterned area of the semiconductor or metal surface, on which patterned area the patterned layer of aluminium is to be grown; and thereafter depositing aluminium selectively on said patterned area by exposing the surface of said substrate to a vapour phase including both an alkylaluminium hydride and hydrogen gas. The selective irradiation of a silicon surface, in an oxidising atmosphere of mixed oxygen and chlorine, to form a patterned area of oxide insulation, is disclosed in United States Patent US-A-4595601. Also, it is disclosed that nitrogen dioxide may be used in place of oxygen and other halogens may be used in place of chlorine. The irradiated surface could instead be of GaAs. In the appended drawings: Fig. 1 and Fig. 2 are schematic views for illustration of an example of the apparatus for practicing the present invention. Fig. 3 is an illustration showing an example of the schematic arrangement of the principal parts of the apparatus in which the present application is applied to the vacuum consistent process. Fig. 4 is a sectional view showing schematically the latent image chamber. Fig. 5 is a sectional view showing schematically the Al selective deposition chamber. Fig. 6 is a sectional view showing plasma film forming chamber. Fig. 7 is a sectional view showing schematically the etching chamber. Fig. 8 is a sectional view showing schematically the cleaning chamber. In the present invention, the semiconductor or metal surface of a substrate is subjected to surface modification by irradiation of a light selectively to the substrate surface in an oxidising or nitriding reactive gas atmosphere to modify photochemically the irradiated surface (latent image layer formation), thereby changing the surface to an electron non-donative surface, so that a film of good quality can be formed only on the remainder electron-donative surface by selective deposition to form an electrode or wiring. Therefore, an electrode of wiring can be formed without using resist at all and the steps can be simplified. Also, there will be no generation of dust by the resist peeled off, and because no etching step is required, no after-corrosion will be generated. The performance and yield of the device is thereby improved. Further, by forming a film by use of the hot CVD method utilising an alkylaluminium hydride and hydrogen, a film with good quality as well as good surface coverage can be deposited at high speed. Preferred embodiments of the present invention are described below by referring to the drawings. First, an example of a preferred semiconductor preparation apparatus for performing the present invention is described. The semiconductor preparation apparatus shown in fig.1 is generally constituted of a loadlock part I, a light latent image forming part II, an Al selective deposition part III, which are mutually connected to each other through gate valves 4a, 4b and 4c. In Fig. 1, the reference character 1 is a substrate, 2 a loadlock chamber for returning the substrate 1 under vacuum atmosphere or atmospheric atmosphere, 3a, 3b and 3c are vacuum evacuation systems constituted or turbo molecular pump, rotary pump, etc., 4a, 4b and 4c gate valves which can take in and out the substrate 1 capable of making the respective chambers vacuum air tight, 5a, 5b and 5c gas introducing inlets for introducing gases, 6b and 6c substrate holders for mounting the substrate 1 thereon, 7 is a latent image chamber for formation of latent image layer, 8 a laser oscillator or lamp which is the light source, 9 an illumination optical system for irradiation of a mask (or reticle) 10 patterned with a light-shielding material, 11 a projection optical system for focusing a mask pattern on the surface of the substrate 1, 12 a window for introducing the light emitted from the projection optical system 11 into the latent image chamber 7, 13 an Al selective deposition chamber for depositing selectively Al at the electron-donative portion formed on the substrate surface, 14 a heater located in the substrate holder 6c for heating the substrate 1, 15 a gas mixer for feeding the mixture of the starting gas and the reactive gas into the Al selective deposition chamber 13, 16 the starting gas gasifier for gasifying an organic metal as the starting gas. Next, the outline of the preparation process is described. In Fig. 1, the substrate 1 with cleaned surface is placed in the loadlock chamber 2 for introducing it into vacuum atmosphere, the loadlock chamber 2 is vacuum evacuated by the vacuum evacuation system 3a, the gate valve 4b is opened and the substrate is mounted on the substrate holder 6a within the latent image chamber. The light generated from the light source is irradiated uniformly to the mask 10 for formation of a desired pattern by the illumination optical system 9, and the pattern image of the mask 10 is focused through the window 12 onto the surface of the substrate 1 according to the projection optical system 11. The mask 10 has a portion which transmits light and a portion which is non-transmissive, and forms a pattern with these portions. The material for the window is selected depending on the wavelength of the light source employed from window materials which do not absorb but transmit at that wavelength. The latent image chamber 7 is internally vacuum evacuated by the vacuum evacuation system 3b, and a gas for effecting photochemical change of the surface is introduced through the gas introducing inlet 5b. As the gas, for example, if the surface is to be oxidised, it may be treated in an oxidising atmosphere containing oxygen atoms, for example, O 2 , O 3 or NO 2 gas may be employed; while if it is to be nitrified, it may be treated in an atmosphere containing nitrogen atoms (containing substantially no oxygen atom), for example, N 2 or NH 3 gas may be employed. By performing the surface modification step by photochemical reaction (i.e. oxidisation or nitrification) only at a portion of the substrate 1 irradiated with the light in the presence of such gas atmosphere, a latent image layer with a thickness of about 5 to 10 nm (50 to 100 Å) formed of an oxide film or a nitride film, is formed at the surface, thereby forming selectively an electron non-donative surface. The wavelength of the light causing the photoreaction to occur may be suitably chosen depending on the material of the substrate and the kind of the gas. For example, for formation of a latent image layer of an oxide film on a Si substrate, O 2 , O 3 or NO 2 gas can be employed, and as the light source, various excimer lasers such as KrF, ArF, XeCl, F 2 laser, dyestuff laser, lamp light sources such as deuterium lamp, low pressure mercury lamp, etc. can be employed. As a method for selectively irradiating light, there is a method using a projection exposure apparatus as shown in Fig. 1 and a method using a direct drawing apparatus with laser beam as shown in Fig.2. In Fig. 2, 17 is a light modulator, 18 a collimator lens, 19 a rotatory polyhedral mirror, 20 a f- lens, 6g a substrate holder mounted on a stage 6h which can be moved in a direction perpendicular to the scanning direction of the laser beam, and otherwise the same constitutions as shown in fig. 1 are attached with the same reference characters. In Fig. 2, the laser beam oscillated from the laser which is the light source (preferably continuous light in this case) is modulated so that a desired pattern can be formed by the light modulator, scanned in one-dimensional direction by the rotatory polyhedron 19, and focused onto the substrate surface by the collimator lens 18 and the f- lens 20. Also, by moving the substrate holder in a direction perpendicular to the scanning direction of the laser beam, light can be selectively irradiated to the whole substrate surface. As the laser beam of the light source, any one which can effect the photochemical reaction of the surface may be employed. For example, as the light source for forming the latent image of an oxide film on a GaAs substrate, in addition to the lasers as described above, Ar laser, krypton laser, He-Cd laser is preferably used. Next, the substrate 1 is mounted on the substrate holder 6c in the Al selective deposition chamber 13 vacuum evacuated by the vacuum evacuation system 3c, and the step of selectively depositing Al thereon is performed. In this step, particularly as the CVD method which deposits selectively a metal film composed of a metal film of good quality composed of Al or mainly of Al as the electoconductive deposition film, an alkyl aluminium hydride and hydrogen are used (hereinafter called the Al-CVD method). The Al-CVD method is used to deposit a metal composed of Al or mainly of Al with good quality on the electron donative surface. The material forming the electron-donative surface is one in which free electrons exist or are intentionally formed within the substrate, and is a material having a surface on which the chemical reaction is promoted by electron donation and acceptance with the starting gas molecules attached on the substrate surface. Metals and semiconductors correspond to such materials. Specifically, there may be included semiconductors such as monocrystalline silicon, polycrystalline silicon, amorphous silicon, etc.; binary system, ternary system or quaternary system III-V group compound semiconductors comprising combinations of Ga, In, Al as the group III element and P, As, N as the group V element; and metals such as tungsten, molybdenum, tantalum, aluminium, copper, titanium, etc. For the substrate with such constitution, Al is deposited through only the simple thermal reaction in the reaction system of the starting gas and H 2 . For example, the thermal reaction in the reaction system of dimethylaluminium hydride (DMAH) and H 2 may be considered to be basically as follows: DMAH takes a dimer structure at room temperature. Also with monomethylaluminium hydride (MMAH 2 ), high quality Al could be deposited through the thermal reaction as shown below in Examples. MMAH 2 has a low vapour pressure at room temperature of 1 to 1 x 10 Pa (0.01 to 0.1 Torr), and therefore a large amount of starting material can be transported with difficulty, and the upper limit value of the deposition speed is some ten nm/min (hundred Å/min.) in practising the present invention, and preferably it is most desirable to use DMAH having a vapour pressure of 1x10 2 Pa (1 Torr) at room temperature. First, the substrate is heated by the heater 4 to the temperature at which the starting gas can be decomposed or higher and desirably lower than 450°C, more desirably a substrate temperature of 260 to 440°C. When deposition is carried out under this condition, when the DMAH partial pressure is 10 -2 to 10 3 Pa (10 -4 to 10 Torr), the deposition speed is very large as 10 to 80 nm/min (100 to 800 Å/min.), to give a sufficiently large deposition speed as the Al deposition technique for ultra-LSI. More preferably, the substrate temperature may be 270°C to 350°C, and the Al film deposited under this condition has also strong orientatability, and also even when subjected to heat treatment at 450°C for one hour, an Al film of good quality without generation of hillock, spike can be obtained on the Si monocrystalline or Si polycrystalline substrate. Also, such Al film is excellent in electromigration resistance. Next, in the gas producing chamber 16 for producing the starting gas, for the liquid DMAH maintained at room temperature, buffling is effected with H 2 or Ar (or other inert gas) as the carrier gas, to produce gaseous DMAH, which is transported to the mixer 15. H 2 as the reaction gas is fed via separate route to the mixer 15. The flow rate is controlled, and the vacuum evacuation system 3c is controlled so that the total pressure may become a desired constant pressure (10 -1 to 10 5 Pa (10 -3 to 760 Torr)). Thus, the starting gas and the reaction gas are allowed to react thermally on the heated substrate surface, whereby the Al is selectively deposited only on the surface other than the non electro-donative surface formed in the previous step, or only on the electron donative surface formed in the whole step. The Al deposited film thus formed has a resistivity of 2.7 to 3.0 µΩ°cm with a film thickness of 40 nm (400 Å), which is substantially equal to the resistivity of Al bulk, and becomes a continuous and flat film. At this time, the pressure during film formation can be chosen within the range of 10 -1 to 10 5 Pa (10 -3 Torr to 760 Torr). Also even with a film thickness of 1 µm, its resistivity is also approximately 2.7 to 3.0 µΩ°cm at room temperature, and a sufficiently dense film can be formed also for a thick film. The reflectance in the visible light wavelength region is approximately 80%, and a thin film excellent in surface flatness can be deposited. As described above, the film obtained is dense, contains little amount of impurities such as carbon, etc., has a resistivity equal to the bulk and also has the characteristic of high surface smoothness, and therefore the following remarkable effects can be obtained. (1) Reduction of hillock Hillock is occurrence of convexities on the Al surface by partial migration of Al when the internal stress is released in the heat treatment step during film formation. Also, similar phenomenon will occur through the local migration by current passage. The Al film formed by the present invention has little internal stress and also under the state approximate to monocrystal. For this reason, while hillocks of 10 4 to 10 6 /cm 2 are formed in the Al film of the prior art by heat treatment at 450 °C for one hour, the hillock number could be reduced greatly to 0 to 10/cm 2 . Thus, because of substantial absence of the surface convexities, the resist film interlayer insulating film can be made thinner, which is advantageous in making the film finer and more flat. (2) Improvement of electromigration resistance Electromigration is the phenomenon in which the wiring atoms move by the flow of high density current. By this phenomenon, voids are caused to be generated and grown along the grain boundary, and the wiring generates heat to be broken accompanied with the reduction of sectional area caused thereby. Migration resistance is generally evaluated in terms of average wiring life. The wiring of the prior art as described above had an average wiring life of 1 x 10 2 to 10 3 hours (in the case of wiring sectional area of 1 µm 2 ) under the conditions of the current passage test of 1 x 10 6 A/cm 2 at 250°C. In contrast, Al film obtained by the Al-CVD method had an average wiring life of 10 3 to 10 4 hours for wiring with a sectional area of 1 µm 2 . When, for example, the wiring width is 0.8 µm, the wiring can sufficiently stand practical application even with a wiring layer thickness of 0.3 µm. In other words, since the wiring layer thickness can be made smaller, the unevenness on the semiconductor surface after location of the wiring could be suppressed minimum, and also high reliability could be obtained in flowing of ordinary current. Also, this can be rendered possible by a very simple process. (3) Improvement of surface smoothness As described in detail above, by applying the Al-CVD method to the wiring formation method of a semiconductor integrated circuit, it becomes possible to improve the yield to great extent as compared with the al wiring of the prior art, and promote lowering in cost. As described above, photographic process and etching process by use of a resist are not required, whereby the yield can be improved to great extent. Here, as a preferable example, the steps were proceeded continuously by connecting the light latent image forming part II and the Al selective deposition part III through the gate valve as shown in Fig. 1, but they can be also independent of each other. Generally, the photolithographic process by use of a resist cannot be practiced in vacuum and therefore it has been impossible in the prior art to practice all of the device preparation steps in vacuum, but by applying the process of the present invention and using the semiconductor preparation apparatus as described above, a vacuum consistent process is rendered possible. The present invention is described in more detail by referring to Fig. 3 to Fig. 8. Fig. 3 is a whole schematic diagram of a vacuum consistent process apparatus. 21 is a plasma film forming chamber which can be made vacuum air tight for plasma film formation of an insulating film and a semiconductor film, 22 an etching chamber which can be made vacuum air tight, 23 a cleaning chamber which can be made vacuum air tight for cleaning the surface of the sample by use of plasma, 24 the conveyor for conveying the substrate to the respective treatment chambers, 25 the conveying chamber which can be made vacuum air tight and in which the conveyor 24 is set. 4d, 4e, 4f and 4g are gate valves which can take in or out the substrate and which can make the respective chambers vacuum air tight, and otherwise those attached with the same reference characters as in Fig. 1 show the same members. Further, to describe about the respective chambers, Fig. 4 and Fig. 5 show the light latent image forming part II and the Al selective deposition part III exploded of the apparatus in Fig. 1. The light latent image forming part shown in Fig. 4 can be also replaced with the drawing apparatus shown in Fig. 2. In Fig. 6 showing the plasma film forming chamber 21, 3d is the vacuum evacuation system, 5d the gas introducing inlet for introducing the deposition gas into the plasma film forming chamber 21, 6d the substrate holder for holding the substrate 1 set in the plasma film forming chamber 21, 26 the counter-electrode opposed to the substrate holder 6d and applied with high frequency power, 27 the insulator for electrical insulation of the counter-electrode 26 from the plasma film forming chamber 21, 28 the high frequency power source of 13.56 MHz and 350 W, 29 the matching box for taking matching between the substrate holder 6d and the high frequency power source 28 side. In Fig. 7 showing the etching chamber 22, 3e is a vacuum evacuation system, 30 a microwave plasma gas excitation device for generating the excitation etching gas to be fed to the etching chamber 22, 5e a gas introducing inlet for introducing the etching gas into the microwave gas excitation device 30, 6e the substrate holder for holding the substrate 1 placed in the etching chamber, 31 the transportation pipe for transporting the excited etching gas generated in the microwave gas excitation device 30 to the etching chamber 22. In Fig. 8 showing the cleaning chamber 23, 3f is the vacuum evacuation system, 5f the gas introducing inlet for introducing the cleaning gas into the vacuum vessel, 6f the substrate holder for holding the substrate 1 placed in the cleaning chamber, 32 the counter-electrode opposed to the substrate holder 6f, 33 the insulator for insulating direct currently the holder 6f, 28 the high frequency power source of 13.56 MHz and 200 W, 29 the matching box for taking matching between the sample holding stand side and the high frequency power source side. By use of the apparatus as described above, a semiconductor device can be prepared without exposure to air, whereby no naturally oxidized film, etc. will be formed on the film surface to reduce contact resistance, improve the performances of the device, reduce the steps to great extent, reduce attachment of dust and also improve the yield. Example 1 As a first example, a process for forming an al electrode pattern on an Si substrate having an n + -a-Si film with a thickness of 200 nm (2000 Å) deposited thereon by means of the apparatus shown in Fig. 1 is explained. The gate valve 4a was opened, the Si substrate previously cleaned placed in the loadlock chamber 2, the gas valve 4a closed, and vacuum evacuation effected by the vacuum evacuation system 3a to 10 -5 Pa (10 -7 Torr) or lower. Previously, the latent image chamber 7 was internally vacuum evacuated by means of the vacuum evacuation system 3b to 10 -6 Pa (10 -8 Torr) or lower, the gate valve 4b opened and the Si substrate mounted on the substrate holder 6b. Through the gas introducing inlet 5b, 0 2 gas was introduced into the latent image chamber 7, and the vacuum evacuation system 3b controlled so that the inner pressure became 2.7 x 10 3 Pa (20 Torr). By use of KrF excimer laser as the light source 8, a laser beam with a wavelength of 248 nm oscillated by the laser was irradiated uniformly to the mask 10 for formation of electrode pattern by means of the illumination optical system 9, and the pattern image of the mask 15 was focused by the projection optical system 11 through the window 12 onto the n + -a-Si film surface. For the material of the window, quartz was employed for permitting the laser beam with the wavelength of 248 nm to transmit through the window without absorption. At the n + -a-Si film surface wherein the mask image was focused, 0 2 and Si underwent photochemical reaction only at the portion irradiated with the light to form an SiO 2 film with a thickness of about 8 nm (80 Å) in the n + -a-Si surface film by exposure for about 10 minutes. At the portion not irradiated with the light, no such reaction proceeded, and therefore an electron non-donative surface with a desired shape was formed. That is, Si in the n + -a-Si surface film changed to Si0 2 , whereby a latent image (surface layer of electron non-donative material) was formed. In other words, a negative pattern of the mask was formed in the n + -a-Si film surface. After formation of the latent image, the introducing gas was stopped, and the system vacuum evacuated until the latent image chamber 7 became internally 10 -5 Pa (10 -7 Torr) or lower. Previously, the Al selective deposition chamber 13 was evacuated to 10 -5 Pa (10 -7 Torr) or lower by the vacuum evacuation system 3c, the gate valve 4c opened, the Si substrate 1 mounted on the substrate holder 6c previously heated by the heater 14 to 300°C, the gate valve 4c closed and the Al selective deposition chamber 13 internally evacuated by the vacuum evacuation system 3c to 10 -6 Pa (10 -8 Torr) or lower. Through the first gasline of the gas mixer 15 was fed DMAH by use of H 2 as the carrier gas, and H 2 were introduced through the gas introducing inlet 5c into the selective deposition chamber 13, and the gas mixer 15 and the vacuum evacuation system 3c were controlled so that the total pressure within the Al selective deposition chamber 13 became 2 x 10 2 Pa (1.5 Torr), and the partial pressure of DMAH 2 x 10 -2 Pa (1.5 x 10 -4 Torr). After deposition for 10 minutes, feeding of DMAH was stopped, heating of the heater 14 stopped and the Si substrate 1 cooled. Feeding of H 2 was stopped, and the Al selective deposition chamber 13 internally evacuated to 10 -5 Pa (10 -7 Torr) or lower by the vacuum evacuation system 3c. The gate valves 4c and 4b were opened, the Si substrate 1 placed in the loadlock chamber 2, the gate valve 4b closed, N 2 gas introduced through the gas introducing inlet 5a to atmospheric pressure, the gate valve 4a opened and the Si substrate 1 taken out. As the result, on the surface applied with the latent image, noting was detected even by surface analysis according to electrospectroscopy. On the other hand, on the a-Si film surface, no carbon was contained at all (detection limit or less), and an Al film of good quality having a resistivity of 2.7 µΩ°cm, an average wiring life of 1 x 10 3 to 10 4 hours and a hullock density of 0 to 10 cm 2 , without generation of spike could be selectively deposited to form an electrode. Example 2 The present second example is to form an al electrode pattern on a GaAs substrate by use of the drawing apparatus shown in Fig.2 as the light latent image forming part of the apparatus shown in Fig.1. The gate valve 4a was opened, the GaAs substrate 1 previously cleaned placed in the loadlock chamber 2, the gate valve 4a closed, and vacuum evacuation effected by the vacuum evacuation system 3a to 10 -5 Pa (10 -7 Torr) or lower. Previously, the latent chamber 7 was internally vacuum evacuated by the vacuum evacuation system 3b to 10 -6 Pa (10 -8 Torr) or lower, the gate valve 4b opened and the GaAs substrate 1 mounted on the substrate holder 6b. Through the gas introducing inlet 5b was introduced NO 2 gas into the latent image chamber 7, and the vacuum evacuation system 3b controlled so that the inner pressure became 2.7 x 10 2 Pa (20 Torr). By use of an Ar laser as the light source 8, the laser beam with a wavelength 514 nm oscillated by the laser was modulated so as to form an electrode pattern by the optical modulator 17, scanned in one dimensional direction by the rotatory polyhedron 19, and focused onto the surface of the GaAs substrate 1 by means of collimater lens 18 and the f- lens 20. Also, the substrate holder 6g was selectively irradiated to the whole substrate surface with the beam by moving it in the direction perpendicular to the scanning direction of the laser beam. As the window material, quartz was employed. At the surface of the GaAs substrate 1 irradiated with the laser beam photochemical reaction with NO 2 proceeded only at the portion irradiated with the beam, whereby an oxide film layer with a thickness of about 10 nm (100 Å) was formed in the surface of the GaAs substrate 1 to form the surface layer of a non-electron-donative material which is the latent image layer. After formation of the latent image, the gas introduced was stopped, and vacuum evacuation effected until the latent image chamber 7 became internally 10-5 Pa (10 -7 Torr) or lower. Previously, the Al selective deposition chamber 13 was internally evacuated to 10 -5 Pa (10 -7 Torr) or lower by the vacuum evacuation system 3c, the gate valve 4c opened, the GaAs substrate 1 mounted on the substrate holder 6c previously heated to 300°C by the heater 14 within the al selective deposition chamber 13, the gate valve 4c closed, and the Al selective deposition chamber 13 internally evacuated to 10 -6 Pa (10 -8 Torr) or lower by the vacuum evacuation system 3c. Through the gasline, H 2 was fed, and after the temperature of the substrate reached 300°C, MMAH and H 2 were introduced through the gas introducing inlet 5c into the Al selective deposition chamber 13, and the gas mixer 15 and the vacuum evacuation system 3c were controlled so that the total pressure within the Al selective deposition chamber 13 became 2 x 10 2 Pa (1.5 Torr), and the partial pressure of NMAH 2 x 10 -2 Pa (1.5 x 10 -4 ) Torr. After deposition for 10 minutes, feeding of MMAH was stopped, heating of the heater 14 stopped and the GaAs substrate 1 cooled. Feeding of H 2 was stopped and the Al selective deposition chamber 13 was internally evacuated to 10 -5 Pa (10 -7 Torr) or lower by the vacuum evacuation system 3c. The gate valves 4c and 4b were opened, the GaAs substrate 1 placed in the loadlock chamber 2, the gate valve 4b closed, N 2 gas introduced through the gas introducing inlet 5a to atmospheric pressure, the gate valve 4a opened, and the GaAs substrate 1 taken out. As the result, an electrode of an Al film of good quality could be formed similarly as in Example 1. According to the embodiments of the present invention as described above, good metal electrode or metal wiring can be formed according to an extremely simple process. Besides since the electron non-donative surface is formed by utilising photoreaction, there is little damage in the surface modification step. Because the energy amount required for reaction can be 10 eV, undesirable defect levels can hardly be formed. As described above, an electrode or wiring can be formed by forming light latent image film to vary the electron donative characteristics of the surface. Therefore, since resist is not employed, the steps can be simplified, generation of dust alleviated to improve the yield, and a metal film of good quality can be formed. Further, a consistent process of the semiconductor device in vacuum is rendered possible, whereby a semiconductor device of high performance can be prepared because of no contact with the air, and also reliability of the device can be improved without generation of after-corrosion because of no presence of etching step.

Claims: A process of producing a semiconductor device, which process includes preparing a patterned layer of aluminium on a surface of a substrate by depositing aluminium selectively from a vapour phase that includes an alkylaluminium hydride; which process comprises the following processing steps of: selectively photoirradiating the semiconductor or metal surface of a substrate in an oxidising atmosphere of gas containing oxygen atoms or a nitriding atmosphere of gas containing nitrogen atoms and substantially no oxygen atoms, to form, by photochemical reaction, an area of an oxide or of a nitride, respectively, only at the irradiated portion of said semiconductor or metal, leaving unirradiated a patterned area of the semiconductor or metal surface, on which patterned area the patterned layer of aluminium is to be grown; and thereafter depositing aluminium selectively on said patterned area by exposing the surface of said substrate to a vapour phase including both an alkylaluminium hydride and hydrogen gas. A process according to claim 1, wherein said alkylaluminium hydride is dimethylaluminium hydride or monomethylaluminium hydride, or a mixture thereof. A process according to claim 1 or 2, wherein the selective photoirradiation of the substrate surface uses laser light transmitted through a mask. A process according to claims 1 or 2, wherein the selective photoirradiation of the substrate surface is effected by direct writing. A process according to any preceding claim, wherein said oxidising atmosphere is an atmosphere of at least one gas selected from the group consisting of O 2 , O 3 and NO 2 gas. A process according to claim 5, wherein said nitriding atmosphere is an atmosphere of at least one gas selected from the group consisting of N 2 and NH 3 gas. A process according to any preceding claim, wherein said step of selectively photoirradiating the substrate surface and said step of depositing aluminium are carried out in the same chamber. A process according to any preceding claim 1 to 6, wherein said step of selectively photoirradiating the substrate surface and said step of depositing aluminium are carried out separately in different chambers. A process as claimed in claim 8 wherein said different chambers are interconnected by gate valve means and the process is performed continuously.

Inventors: SATO YASUE, SATO, YASUE, SATO, YASUE, C/O CANON KABUSHIKI KAISHA
Applicants: CANON KK, CANON KABUSHIKI KAISHA
Application year: 1991
Main classification: H01L21
IPC codes: C23C16, H01L21, H01L31