Laser structure with distributed feedback and method of manufacturing same

Abstract: Laser structure with varying distributed feedback, comprising: a substrate (1); an active layer applied to the substrate (2); a first cladding layer applied to the active layer (3); a second cladding layer (4) applied to the first cladding layer; and variation means (6) for varying a coupling coefficient between the wave travelling backward and forward in the active layer such that a relatively uniform power density is obtained in the active layer.

Description: Since the article "Coupled-wave theory of distributed feedback lasers" by H. Kogelnik and C.V. Schank in the Journal of Applied Physics, Volume 43, no. 5, May 1972, the trend has been increasingly towards lasers with distributed feedback. These DFB lasers have a power spectrum narrow in wavelength and are suitable for use in optical telecommunication and the like. With these known DFB lasers a wave-like junction or so-called grid is arranged between a first and second cladding layer, whereby distributed Bragg reflections take place between optical waves travelling backward and forward. With long DFB lasers, which are important for obtaining a narrow line width, problems occur with respect to stability of the mode selectivity thereof. This is the consequence of variation of the power density in the lengthwise direction of the DFB laser. US-A- 4 847 857 discloses a DFB laser in which the coupling coefficient is lowered in the central portion and is increased near the end surfaces. The present invention provides a laser structure according to claim 1 and methods of manufacturing the same according to claims 3 and 4. Particularly at high power, the above is of importance. Further advantages and features of the details of the present invention will become apparent in the light of a description of preferred embodiments thereof with reference to the annexed drawing, wherein: Fig. 1 shows a schematic view in section of a first embodiment of a laser structure according to the present invention; Fig. 2 shows a schematic detail of a second embodiment of a laser structure according to the present invention; and Fig. 3 shows a schematic view in section of an embodiment according to the present invention. Applied to a substrate 1 (fig. 1), for instance of InP, is an active layer 2, for instance of InGaAsP, onto which is applied a first cladding layer 3, for instance also of InGaAsP with another refractive index, onto which is applied a second cladding layer 4, for instance of InP, on which an electrode 5 is arranged. The refractive indices of the layers 1, 2, 3 and 4 amount for instance to 3.1, 3.5, 3.2 and 3.1 respectively. Arranged between the first and second cladding layers 3 and 4 is a junction 6 provided with a periodic structure the amplitude of which varies in travel direction of the waves in the active layer 2 (i.e. in the lengthwise direction of fig. 2). As a result of the varying amplitude an at least slightly more uniform power density is created in lengthwise direction of the active layer 2 than according to the known art. In preference the periodic structure is formed such that the coupling coefficient between both waves approaches the following formula: k(z) = 1 - 2z/L 2[z(L - z) 0.5 wherein L is the length of the laser and z the coordinate in lengthwise direction of the laser. The above mentioned embodiment can be manufactured for instance using holographic techniques; the patterns with mutually slightly differing periodic length dimensions provide the shown junction 6. For a characteristic wavelength of λ= 1.3-1.6 um a characteristic measurement of the junction 6 amounts for instance to λ= 0.2 um. A junction structure 6′ to be made preferably with electron beams (fig. 2) has approximately the character of a block shape with varying positive and negative surfaces, similar to a block wave with varying duty cycle. With a structure as shown in fig. 3 a directional coupling layer 7 is arranged beneath an active layer 2′, under which layer 7 a second active layer 8 is arranged above a substrate layer 9. Applied above the active layer 2′ is a first cladding layer 3′ and a second cladding layer 4′, between which is situated a junction with periodic structure of substantially constant amplitude. Due to the coupling layer 7 the coupling coefficient between the wave moving to the left and the wave moving to the right in fig. 3 is varied over the lengthwise direction of active layer 2′. A more uniform power density is also achieved over the length of active layer 2′ in this embodiment than is known in the prior art.

Claims: Laser structure with varying distributed feedback, comprising: a substrate; an active layer applied to the substrate; a first cladding layer applied to the active layer; a second cladding layer applied to the first cladding layer; and variation means for variation in coupling coefficient between the wave travelling backward and forward in the active layer, which variation means comprise a periodic structure or grid between the first cladding layer and the second cladding layer, wherein the periodic structure is formed at a position z along the laser structure such that the coupling coefficient k(z) between the wave travelling backward and the wave travelling forward approaches the following formula: k(z) = 1 - 2z/L 2 z (L - z) wherein L is the total length of the laser structure. Laser structure as claimed in claim 1, wherein the variation means comprise a second active layer which is coupled with the first active layer via a directional coupling layer. Method for manufacturing the laser structure as claimed in claim 1, wherein the periodic structure is formed by two holographic interference patterns with mutually differing repetition intervals. Method for manufacturing a laser structure as claimed in claim 1, wherein the periodic structure has the character of a block wave with varying duty cycle arranged by means of electron beams.

Inventors: BAETS ROELAND GUSTAAF FRANS, MORTHIER GEERT JOZEF IVO, BAETS, ROELAND GUSTAAF FRANS, MORTHIER, GEERT JOZEF IVO
Applicants: IMEC INTER UNI MICRO ELECTR, INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM VZW
Application year: 1991
Main classification: H01S3
IPC codes: H01S5