Method for forming thin film and apparatus therefor

Abstract: In an apparatus for forming a thin film on substrates, two substrate supporters 1 each having a recess 2 are connected by a shaft so that the recess oppose to each other, and both ends of many rod-like substrates 3 are supported on the side wall of the recess 2. Then, the substrates 3 are rotated on the side walls as the substrate supporters 1 are revolved, and the substrates shift their positions by their own weights. In this state, particles for deposition fly to the substrates from a material source, while the rod-like substrates are stirred to come at the same probability to a region where a film can be deposited. Thus, a uniform thin film is formed on the surface of every substrate. The number of the recess may be two or more. Further, a nest of substrate supporters may be used.

Description: BACKGROUND OF THE INVENTION Field of the Invention The present invention relates to a method for forming a thin film such as vacuum deposition, sputtering and chemical vapor deposition and an apparatus therefor. Prior Art Recently, devices manufactured with thin film techniques have been researched by many workers in order to give many functions and to add more value to a device, and thin film process technology on which the characteristics of a device depends much becomes an important key technology. The characteristics of thin film are affected largely by the material, shape or the like of a substrate to which a thin film is applied. Therefore, a technique for manufacturing a thin film is necessary for each usage and for each object. When a thin film is formed on the surface of a three dimensional substrate, a film is deposited for example while the substrate is rotated so as to expose the surface of the substrate to which a thin film is applied in order to deposit a uniform film. There is known this type of a prior art thin film forming apparatus such as an ion plating apparatus disclosed in Japanese Utility Model laid open Publication 57955/1990 and a barrel coating apparatus disclosed in Japanese Patent laid open Publication 125869/1990. In the former ion plating apparatus, many substrates are attached to a holder, and the substrates are revolved according to the rotation of the holder while rotating around their own axis at the same time . Then, a uniform thin film is formed on every substrate. In the latter barrel coating apparatus, many substrates are enclosed in a rotating tubular barrel and evaporation material is supplied from a crucible arranged inside the barrel. However, in such prior art apparatuses, the precision of the size of substrates to which a thin film is applied becomes deteriorated in the process of manufacturing a thin film if the substrate is a component to be used in a precision mechanism and high mechanical precision is required. Further, a problem of mass productivity may arise, depending on the form of the substrate. For example, in an apparatus wherein a substrate such as a capstan shaft for a videocassette recorder which is needed to be manufactured precisely has to be held in a holder, stress may arise and a strain due to the stress may be generated when the temperature increases in the film-forming process. In an apparatus wherein substrates are included in a barrel, a thin film is also adhered on the barrel, and this undesirable film causes many problems. For example, if the material of the film is high electrical resistance material, the quality of film becomes lower. For example, the potential of the substrate becomes unstable or discharge may cause damage to the substrate. Further, the thermal conduction from the substrate to the barrel is hindered by the film and the temperature of the substrate becomes high. SUMMARY OF THE INVENTION An object of the present invention is to provide a film-forming method and an apparatus which solves these problems. This object is solved by the methods and apparatus of independent claims 1, 4, 10, 12, 17, and 21. Preferred embodiments are laid down in the respective dependent claims. In the present invention, two substrate supporters each having a recess are arranged so that the recesses oppose to each other and rod-like substrates are supported with their own weights at the two ends of each substrate on a side wall portion of each recess. Then, while the substrate supporters are driven to be rotated, a thin film is formed on the substrates uniformly. The recess preferably has a ring-shaped space. It is preferable that a deposition source is shaded from the side wall portion of the recess at which the rod-like substrates are supported. Thus, the rod-like substrates are not needed to be fixed to the supporters at all, but only to be put on the substrate supporters. Therefore, the operation of manufacturing a film becomes much easier. Further, because the two ends of a substrate are not fixed, but only supported on the substrate supporters, the substrate is free from thermal expansion due to heating when a thin film is deposited. Because the substrate is not subjected to thermal stress when a thin film is formed, the precision of the substrate is not deteriorated. When the rod-like substrates are rotated, they continue to change their positions due to the friction With the substrate supporters supporting the substrates while shifting the side exposed to material for deposition. Thus, each substrate enters at the same probability into a region wherein a thin film can be formed. Therefore, a uniform film is formed on the surface of the substrates. Especially, by giving the recesses a cylindrical shape with a side wall portion, the substrates supported by the recesses can be maintained roughly in parallel to the rotation axis of the substrate supporters, so that a better thin film can be formed. Further, because the deposition source is shaded from the side wall portions of the recesses for supporting the substrates, a thin film is prevented to be formed on the side wall portions of the recesses. This is advantageous especially if an electric bias potential is applied through the side wall portions to the substrate. If the sizes of a rod-like substrate and of a substrate supporter satisfy the following relation, the substrate can be moved freely in the substrate supporters and does not drop outside the substrate supporters even when they are stirred on the rotation: L 2 > (m+c) 2 + b 2 - a 2 , wherein "L" designates the length of the rod-like substrate, "m" designates the distance between the recesses arranged opposite to each other, "c" designates the depth of the recess, "b" designates the inner diameter of the recess of the substrate supporter, and "a" designates the diameter of the connecting shaft. Therefore, a uniform thin film can be formed on every substrate to be set at the substrate supporters without dropping the substrates. The above-mentioned combination of the substrates and the substrate supporters can be extended to form a successive series of combination or a nest of substrate supporters. For example, the above-mentioned substrate supporters can be supported further by another pair of larger supporters similarly. If the length L of the substrate is very short, a plurality of pairs of first substrate supporters satisfying the above-mentioned relation can be manufactured for setting a plurality of substrates between the first substrate supporters. Further, second substrate supporters of a similar shape but of a larger size are manufactured, and the plurality of pairs of the first substrate supporters are supported between the second supporters. If this combination is repeated further as a nest, a thin film can be formed on a very large amount of substrates, and even if the size of substrates is small, uniform films can be formed without dropping substrates. An advantage of the present invention is that a thin film can be formed on substrates by using a compact and simple structure of an apparatus for forming a thin film. Another advantage of the present invention is that the number of substrates processed at the same time or the productivity can be improved to a large extent. BRIEF DESCRIPTION OF THE DRAWINGS These and other objects and features of the present invention will become clear from the following description taken in conjunction with the preferred embodiments thereof with reference to the accompanying drawings, and in which: Fig. 1(a) is a schematic perspective view of a thin film forming apparatus according the a first Example of the present invention, while Fig. 1(b) is a sectional view along A-A line shown in Fig. 1(a); Fig. 2 is a perspective view for illustrating the installing a substrate in substrate supporters; Figs. 3(a) - (d) are diagrams for illustrating the state of the movement of substrates in succession when the substrate supporters are rotated; Figs. 4(a) and (b) are diagrams for illustrating the conditions on the size of a substrate; Figs. 5(a), (b), (c) and (d) are diagrams wherein substrates of the number 5, 20, 35 and 50 are set in the substrate supporters, respectively; Fig. 6 is a schematic view of a prior art barrel coating apparatus; Fig. 7(a) is a schematic perspective view of a thin film forming apparatus according the a second Example of the present invention, while Fig. 7(b) is a sectional view along B-B line shown in Fig. 7(a); Fig. 8 is a perspective view for illustrating the installing a substrate in substrate supporters; Fig. 9(a) is a schematic perspective view of a thin film forming apparatus according the a third Example of the present invention, while Fig. 9(b) is a sectional view along C-C line shown in Fig. 9(a); Fig. 10 is a graph of the resistance between the substrates and the substrate holders plotted against operation cycle; Fig. 11(a) is a schematic perspective view of a thin film forming apparatus according the a fourth Example of the present invention, while Fig. 11(b) is a sectional view along D-D line shown in Fig. 11(a); and Fig. 12 is a graph of the resistance between the substrates and the substrate holders plotted against operation cycle. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Referring now to the drawings, wherein like reference numerals designate like or corresponding parts throughout the several views, embodiments of the present invention will be described. Example 1 Fig. 1(a) shows a schematic perspective view of a thin film forming apparatus of a first Example according to the present invention, while Fig. 1(b) shows a sectional view along A-A line shown in Fig. 1(a). In Figs. 1(a) and (b), a substrate 3 is a capstan shaft for driving a magnetic tape used in a videocassette recorder. A thin film of diamond-like carbon will be formed on the side of this cylindrical substrate 3. As shown in detail in Fig. 2, a pair of substrate supporters 1 each having a cylindrical recess 2 are arranged so that the recesses 2 oppose to each other and cylindrical substrates 3 are put between the substrate supporters 1. Then, a central shaft 4 connects the substrate supporters 1 directly at the center of the recesses 2. That is, a groove 2a with a ring-shaped space is formed by the recess 2 and the central shaft 4 in the substrate supporters 1, and the cylindrical substrates 3 are held on the side surface of the groove 2a by the weight of the substrates themselves. Though only one substrate 3 is displayed in Fig. 2, a plurality of substrates 3 can be supported by the substrate supporters 1, as shown in Figs. 1(a) and (b). The substrate supporters 2 and a material supply 5 are fixed in a vacuum chamber 10 which can be evacuated by a vacuum pump not shown. The central shaft 4 can be driven by a motor 6, while a direct current power supply 7 is connected to an electrode 8 which is connected further to the central shaft 4. Benzene as a material gas is introduced from the lower part of the vacuum chamber 10 which has been evacuated to a pressure of 0.13 Pa (1.0 x 10⁻³ Torr) to generate carbon ions at the material supply 5. The substrate supporters 1 are arranged above the material supply 5 opposite to it. A bias electric potential is applied to the substrates 3 via the substrate supporters 1 by the direct current power supply 7. Particles 9 or carbon ions are extracted by the action of the bias electric potential, and a film is formed on the substrates 3. As explained above, a large amount of substrates 3 can be set very easily in this Example only by putting them in the substrate supporters 1 guided by the central shaft 4. Figs. 3(a) - (d) show the movement of the cylindrical substrates 3 in A-A section shown in Fig. 1 when they are rotated. The cylindrical substrates 3 are held by the two ends by their own weights on the side surface of the groove 2a, and a thin film of diamond-like carbon is formed on the side of the substrates 3 between the two ends. The cylindrical substrates 3 are not fixed, but only put by their own weights on the side surface of the groove 2a. Therefore, they tend to move in the direction of the rotation of the substrate supporters 1 due to the friction with the side surface of the groove 2a as the supporters 1 are rotated, so that they are dragged above while rotating on their axes, as illustrated in Figs. 3(a) and (b). Then, as displayed in Figs. 3(c) and (d), after substrates 3 are dragged to a certain height, they roll down to the lowest part of the cylindrical side surface or pass through a highest position to go over the central shaft 4 and then roll down to the lowest part. While the supporters 1 are rotated, the substrates 3 repeat this movement. During this movement, particles 9 of materials fly from below, and a thin film of diamond-like carbon is formed on the side of each substrate 3 except the two ends. Further, because the substrates 3 move randomly due to the rotation of the substrate supporters 1 as mentioned above, every cylindrical substrate 3 repeats the movement to an area suitable for depositing a thin film at the same probability, and a uniform film can be formed on the sides of a plurality of substrates 3 at the same time. In order to perform such movement, the shape of the substrate 3 and of the substrate supporter 1 are not required to have a circular section. For example, the cross section of a substrate 3 may be elliptical or polygonal so that the substrates can be rotated according to the rotation of the substrate supporters 1. Further, the substrate may have any shape as far as it can be rotated on the recess. However, especially if the cross section is circular, a substrate 3 itself is easy to be rotated and the position of the substrate moves smoothly. Thus, the uniformity of the obtained film is improved further. In this Example, the two ends of a substrate 3 are guided by the groove 2a of cylindrical shape. Thus, in a series of process illustrated in Figs. 3(a) - (d), the slope angle of a substrate 3 against the central shaft 4 is limited in a certain range and is kept roughly in parallel to the central shaft 4. Therefore, the uniformity of the film formed on a circular substrate 3 is improved further. Further, because the slope angle is limited, a substrate is prevented to drop from a gap between the opposing substrate supporters 1. When the substrate supporters 1 are rotated, a substrate 3 rolls in the substrate supporters 1, being stirred with other substrates with a slope angle against the rotation direction. With reference to Figs. 4(a) and (b) for illustrating this situation, a cylindrical substrate 3 moves around in a space V having a side of plane A which is parallel to and makes contact with the central shaft 4. At first, a cylindrical substrate 3 is put in a position in parallel to the central shaft 4. When the substrate 3 is slanted gradually to a position shown in Fig. 4(b), it does not drop if its length L is larger than the maximum length L₀ between two points to be realized in the space V. The maximum length L₀ is the length of the diagonal of the plane A and it can be expressed as follows: L 0 = ((m+c) 2 + b 2 - a 2 ) 1/2 , wherein "m" designates the distance between the grooves 2a arranged opposite to each other, "c" designates the depth of the groove 2a, "b" designates the inner diameter of the groove 2a of the substrate supporter 1, and "a" designates the diameter of the central shaft 4. Therefore, a condition that a substrate 3 of length L does not drop is as follows: L > ((m+c) 2 + b 2 - a 2 ) 1/2 . A substrate has a volume, and the degree of freedom becomes limited further by the volume. That is, as far as the above-mentioned condition is satisfied, a substrate does not drop from the substrate supporters 1. Then, if cylindrical substrates 3 are set between the substrate supporters 1 by adopting the size L satisfying the condition, they do not drop and a thin film is formed uniformly on every substrate 3. In this Example, it is clear that thermal stress is generated little in a cylindrical substrate 3 when a thin film is formed. That is, though the temperature of the substrate 3 itself increases due to radiation from the material supply 5 or a heater therefor, the substrate 3 is only supported on the side surface of the grooves 2a and the thermal expansion of the substrate is not restricted at all. Further, the side surface of the groove 2a of the substrate supporters 1 which make contact with the two ends of substrates 3 is shaded in directions along which particles 9 for deposition fly. Therefore, the surface for supporting substrates 3 is difficult for a film to be deposited, the contact state between the substrates 3 and the inner side surface of the groove 2a can be kept good. A bias electric potential is applied well via the substrate supporters 1 to the substrates 3 for a long time, a thin film can be applied to the substrates 3 in good conditions. Further, the maintenance period for removing a film deposited on the wall surface can be lengthened. Further, the increase in temperature of the substrates 3 is not so high because they are arranged separately from the evaporation source. As explained above, in this Example, thermal stress is not generated on forming a thin film, and the increase in temperature of substrate is small, so that the precision of the substrate 3 is deteriorated less compared with that of prior art substrates, and a good film can be formed. Next, the quality of a thin film of diamond-like carbon applied to a cylindrical substrate 3 and a cylindrical substrate 3 on which a thin film of diamond-like carbon is applied to will be explained. A thin film is manufactured on the surface of cylindrical substrates 3 while a bias potential of -3 kV is applied to the substrate supporters 1 from the direct current power supply 7 and the substrate supporters integrated with the shaft 4 are rotated by the motor 6. First, the number of cylindrical substrates 3 of cylindrical cross section of 2 mm of diameter to be set in the cylindrical grooves 2a and the uniformity of the thickness of a film deposited on the surface of cylindrical substrates 3 are investigated. Experiments are performed in four cases wherein the number of substrates is 5, 20, 35 and 50, as displayed schematically in Figs. 5(a), (b), (c) and (d), respectively. After a thin film of diamond-like carbon is formed on the surface of cylindrical substrates 3, the film thickness is measured at several points on the surface of each substrate 3 to check the distribution of film thickness. Table 1 shows the results of the measurement. number of substrates 5 20 35 50 distribution of film thickness ±5 ±5 ±5 ±20 As displayed in Table 1, when the number of substrates 3 is fifty (Fig. 5(d)), the thickness of a film formed on the cylindrical substrates 3 becomes scattered. In this case, many substrates 3 are put in the groove 2a and they cover even the central shaft 4. The nonuniformity of film thickness is ascribable to that substrates 3 around the central shaft 4 become harder to shift their positions equally and that the probability to move to a region for forming a film becomes different for each substrate. Therefore, in order to form a film of uniform thickness, it is desirable to determine the number of substrates so that each substrate 3 can move at the same probability to the film-forming region. It is found that such condition can be satisfied if the number of substrates 3 is not so large to cover the central shaft 4. In cases that the number of substrates 3 is 5, 20 and 35 (Figs. 5(a), (b) and (c)), when the substrate supporters 1 are rotated from the stationary state, all substrates 3 are stirred according to the rotation of the substrate supporters 1 and each substrate 3 repeats the movement to the film-forming region at the same probability to form a uniform film. Next, in order to investigate the relation of the size of substrate supporter 1 and the falling of substrate from the supporters 1, five sizes of substrate supporters are prepared, and thirty five substrates 3 are set in the substrate supporters 1 to form a thin film. Table 2 summarizes the data of the size "A" - "E" of the substrate supporters 1 and the number of substrates 3 which fall from the substrate supporters 1. kind of substrate A B C D E size of substrate supporter b (mm) 13 13 18 13 15 a (mm) 8 8 12 6 4 c (mm) 3 3 3 5 5 m (mm) 24 26 26 21 21 L (mm) 29 29 29 29 29 number of fallen substrate 0 19 8 0 16 Only in cases of substrate supporters "A" and "D", no substrates fall, and a uniform thin film can be formed on every substrate 3. On the contrary, in cases that substrates 3 fall, they fall on the ion source 5 to prevent flight of ions. Thus, a film is not formed normally and this causes a bad influence that a film is not formed uniformly even on the substrates remained on the substrate supporters 1. Next, the data will be explained on thickness of films obtained by using the above-mentioned substrate supporters "A" shown in Table 2 supporting thirty five substrates 3. Table 3 summarizes the film thickness data on ten substrates taken out arbitrarily among the thirty five in ten cases "A" - "J". The scattering of the data on film thickness is within ±5 % in every cases "A" - "J", and each substrate has a uniform film thickness. Next, the quality of film is examined. Two cylindrical substrates 3 as capstan shaft for videocassette recorder are manufactured which have a thin film of diamond-like carbon by using the apparatus according to the present Example and by using a prior art apparatus which will be explained below. The quality of film is evaluated by the amount of friction of film, which is measured by pressing a magnetic tape to the surface of a substrate 3 with a rubber roller under a constant tension for five hundred hours. The pressing force of roller is 1.4 kg. Table 4 compiles the data. Fig. 6 shows the above-mentioned prior art apparatus according to Japanese Utility Model laid open Publication 57955/1990 which is used for comparison experiments summarized in Table 4 and others. In this ion plating apparatus, many substrates 22 are attached to either of a pair of holders 21 which are fixed around the top of a drive shaft 20. These holders 21 are revolved around the central axis of the drive shafts 20 according to the rotation of the drive shafts 20 while rotating also around their own axis at the same time via planet gear mechanisms. Evaporation material 23 is supplied from a crucible 24. Thus, a uniform thin film is formed on every substrate. In the comparison experiments, cylindrical substrates 3 are fixed instead of the substrates 22 as mentioned above. As shown in Table 4, it is confirmed that a quality similar to prior art can be obtained. apparatus prior art this invention amount of friction (µm) substrate substrate A 0.07 C 0.07 B 0.09 D 0.09 Next, Table 5 compiles the data on bending of the substrates 3 due to the film-forming process. The capstan shafts for videocassette recorder used as substrates 3 are subject to a process to remove strain before the process. apparatus prior art this invention amount of bending (µm) substrate substrate A 1.5 C 0.1 B 1.4 D 0.1 As to the two samples prepared by the prior art apparatus, the bending is more than 1 µm. On the contrary, as to the two samples prepared in this Example, the bending is 0.1 µm. As explained above, it is confirmed in this Example that the precision can be kept after a thin film is formed, and the precision can be improved largely. The deviation from straightness of capstan shaft of videocassette recorder is required to be about 0.8 µm or less in order to run the tape at a constant speed. Therefore, this Example is found especially advantageous for such a component to be manufactured precisely. Next, the productivity of the apparatus of this Example and of the prior art apparatus. A film of thickness 200 nm (2000 Å) of diamond-like carbon is formed on a capstan shaft as a substrate, and the deposition rate (nm/min) [Å/min], time required for forming a film, number of processed substrates per one operation cycle are obtained and the number of processed substrates per hour is calculated. Table 6 summarizes the data. It is found that the productivity is improved by about six times compared with the prior art apparatus. Example 2 Next, a second Example of an apparatus according to the present invention will be explained below. Fig. 7 (a) shows schematically the structure of the apparatus. Elements having the same function as the counterparts of Example 1 have the same reference numerals and detailed explanation on them will be omitted. Fig. 7(b) illustrates B-B cross section in Fig. 7(a). Two substrate supporters 101 are arranged above a material supply 5. As illustrated in detail in Fig. 8, a substrate supporter 101 has eight circular dips 102 having a cylindrical side wall similar to the recess 2 in Example 1. A pair of the substrate supporters 101 are arranged so that the dips 102 of one of the supporters 101 oppose to the counterparts of the other, and eight central axes 104 of 8 mm diameter are set at the center position of each dip 102. The central axes 104 help to make the substrates 3 in parallel to each other when the substrate supporters 101 are rotated. Thirty five substrates 3 are put in each dip 103 and a total of two hundred eighty substrates are put between the substrate supporters 101 connected by a shaft 110. Then, a thin film of diamond-like carbon is formed on the cylindrical substrates 3 in the same conditions as in Example 1. The data are compared with prior art data. First, the uniformity of film is examined. Three substrates are extracted arbitrarily from the substrates and the film thickness thereof are examined. It is found that the scattering is ±5% or less, and this shows that a film is formed uniformly. Next, the quality of film is evaluated by using the same evaluation method. The results on two substrates extracted arbitrarily from the substrates are summarized in Table 7 as well as those on two substrates obtained with the prior art apparatus. The amount of friction is of the same order between the two apparatuses and it is confirmed that the quality of film obtained in this Example is equal to that of prior art. apparatus prior art this invention amount of friction (µm) substrate substrate A 0.07 C 0.08 B 0.09 D 0.08 Next, Table 8 compiles the results on the bending of the substrates 3 after the film-forming process. As to two samples prepared by the prior art apparatus, the bending is more than 1 µm. On the contrary, as to two samples prepared in this Example, the bending is 0.1 µm. That is, when the apparatus of this Example is used, the deviation from straightness does not change at all after the film forming process. Therefore, it is confirmed that the precision can be improved to a large extent when compared with prior art. apparatus prior art this invention amount of bending (µm) substrate substrate A 1.5 C 0.1 B 1.4 D 0.1 Then, the productivity of the apparatus of this Example is compared with that of prior art, as in Example 1. It is found that the number of processed substrates per hour increases by about twenty times compared with the prior art method. As explained above, in this Example, the quality and the uniformity of film can be kept the same as those of prior art, while the number of processed substrates can be improved remarkably. Example 3 Fig. 9(a) displays the structure of a third Example of an apparatus according to the present invention schematically, and Fig. 9(b) shows a section along C-C line in Fig. 9(a). This Example differs from Example 1 as follows: First, a cylindrical cover 215 having a window 214 opposite to a material supply 5 is provided between two opposing substrate supporters 201. On the other hand, the central shaft 4 is not used, and the substrate supporters 201 are driven to rotate at the same revolution rate with use of a synchronous mechanism not shown. In this Example, particles 9 for forming a film arrive to a cylindrical substrate 3 through the window 214 of the cover 215. Because the cover 215 is provided in this Example, substrates 3 are supported on the inner side surface of dips 202 and they are included in the cover 215, while the material supply 5 is arranged at the outside the cover in contrast to a prior art barrel coating apparatus. Therefore, an increase in temperature of the substrates 3 observed in the prior art apparatus can be avoided. Further, because the side surface of the cover 215 is covered by substrates 3, vapor nearly deposits on the side surface. In Examples 1 and 2, vapor deposits slightly on the side surface of the dips 202a on which substrates 3 are supported and the deposition on the part can be neglected practically. However, the cover 215 is provided in this Example, the deposition of vapor on the side surface can be decreased further. Further, if the substrate supporters 201 are rotated at an appropriate slow revolution rate, the cylindrical substrates 3 can be kept to be roughly in parallel to each other though the central shaft 4 is not used in this Example. Thus, a good film can be formed. Next, the quality of a thin film of diamond-like carbon applied to a cylindrical substrate 3 and a cylindrical substrate 3 on which a thin film of diamond-like carbon is applied to will be explained. First, the uniformity of the thickness of a film deposited on the surface of cylindrical substrates 3 are investigated. After a thin film of diamond-like carbon is formed on the surface of thirty five cylindrical substrates 3, the film thickness distribution is measured at the center area and the other two areas in the side on the surface of three substrates taken out arbitrarily from the thirty five. It is found that the distribution of film thickness is within ±5% in a sample. Further, Table 10 shows film thickness data of ten substrates taken out arbitrarily from the thirty five. The distribution of film thickness among the samples "A" - "J" is within ±5%. Thus, it is found that a film is formed uniformly among samples. Next, the quality of film is examined. Cylindrical substrates 3 as capstan shaft for videocassette recorder are manufactured which have a thin film of diamond-like carbon both by using the apparatus according to the present Example and by using the above-mentioned prior art apparatus. The quality of film is evaluated by the amount of friction of film, which is measured by pressing a magnetic tape to the surface of a substrate 3 with a rubber roller under a constant tension for five hundred hours. The pressing force of roller is 1.1 kg. Table 11 shows the results on two substrates for each manufacturing methods. The amount of friction is about the same between the two manufacturing methods, and it is confirmed that a quality similar to prior art can be obtained. apparatus prior art this invention amount of friction (µm) substrate substrate A 0.07 C 0.08 B 0.09 D 0.08 Next, the bending of substrate 3 is examined. Table 12 compiles the results on the bending of two substrates after the film-forming process. The substrates are subjected to remove strain before the film forming process. As to the two samples prepared by the prior art apparatus, the bending is more than 1 µm. On the contrary, as to the two samples prepared in this Example, the bending is 0.1 µm. That is, when the apparatus of this Example is used, the deviation from straightness does not change at all after the film forming process or the precision can be kept. Therefore, it is confirmed that the precision can be improved to a large extent when compared with prior art. apparatus prior art this invention amount of bending (µm) substrate substrate A 1.5 C 0.1 B 1.4 D 0.1 When the material of a film to be formed on a substrate 3 is a high electrical resistance material such as diamond-like carbon, the deposition of such material on the cover may cause instability of film forming process and damage due to discharge happen in a prior art barrel coating apparatus. However, such problems can be solved in this Example as well as in the other Examples. The material of substrate supporters 1, 101, 201 will be explained below. If a film to be formed is made of a diamond-like carbon, the material of the side surface of the groove 2a or the like for supporting substrates 3 is preferably brass, gold or silver. Because a diamond-like carbon is difficult to adhere to these materials, the side surface of the groove 2a on the like can be kept in a clean state wherein little film adheres to the inner side surface. Thus, an electrical bias voltage can be applied well via the side surface to substrates 3. For example, the situation in Example 1 will be explained below. Four cases wherein the side surface of the groove 2a is plated with gold, silver and brass and is made of stainless steel are examined. The film-forming conditions of diamond-like carbon are the same in Example 1, and the operation of fifty cycles are performed by using the four kinds of substrate supporters 1, 101, 201. A change in the electrically conducting state is observed between the substrate supporters 1, 101, 201 and the substrates 3 as time passes. Fig. 10 shows the resistance between the substrate supporters and the substrates as the operation cycle of the apparatus is increased. If the substrate supporters 1, 101, 201 are made from stainless steel, the resistance increases to 20 kΩ when the operation cycle becomes thirty five. The resistance drop in bias electric potential due to the existence of the resistance is about 200 V, and this makes it difficult to apply an effective bias potential. On the contrary, if the side surface of the substrate supporters 1, 101, 201 are made by using plating with brass, gold or silver, the resistance increases a little with increase in operation cycle. However, the resistance drop in bias electric potential due to the existence of the resistance is only about 10 V, and this affects little to the film-forming operation, and good electrical conductance is kept on. Further, Table 13 summarizes the quality of film by using the above-mentioned friction test. If the substrate supporters 1, 101, 201 are made from stainless steel, there is a tendency that the film quality is deteriorated according to the electrical resistance. On the contrary, if the side surface of the substrate supporters 1, 101, 201 are made by using plating with brass, gold or silver, the film quality is not recognized to be changed. number of operation cycle amount of friction when SUS supporters are used (µm) amount of friction when gold plating is used (µm) amount of friction when silver plating is used (µm) amount of friction when brass supporters are used (µm) 5 0.07 0.07 0.07 0.07 10 0.07 0.07 0.07 0.07 15 0.07 0.07 0.07 0.07 20 0.07 0.07 0.07 0.07 25 0.07 0.07 0.07 0.07 30 0.07 0.07 0.07 0.07 35 0.15 0.07 0.07 0.07 40 0.20 0.07 0.07 0.07 45 0.20 0.07 0.07 0.07 50 0.20 0.07 0.07 0.07 The fact that the film quality is affected by the material of the side surface of the groove 2a is ascribable to the amount of film adhered to the side surface on which substrates 3 are supported. When substrate supporters 1, 101, 201 are made from stainless steel, it is observed that the amount of film adhered to the surface increases with increase in operation cycle. On the contrary, in the other cases, it is observed that only carbon powder is adhered slightly and the carbon can be wiped out easily with a cloth. Therefore, if at least the side surface of the groove is made from gold, silver or brass, a film adhered to the surface can be removed easily and the maintenance of the apparatus becomes easy. It is to be noted that an alloy material of gold, silver or copper can realize a similar effect as pure gold or the like. Example 4 Next, a fourth Example of an apparatus according to the present invention will be explained below. Figs. 11(a) shows schematically the structure of the apparatus. Elements having the same function as the counterparts of Examples 1 and 2 shown in Figs, 1, 2, 7 and 8 have the same reference numerals and detailed explanation on them will be omitted. Fig. 11(b) illustrates a cross section along D-D line shown in Fig. 11(a). A plurality of substrates 3 are set in a first substrate supporter 301 similar to the substrate supporter 1 in Example 1. A plurality of such first substrate supporters 301 are connected by a central shaft 304. The outer side surface of the first substrate supporters 301 is cylindrical and the two ends of the first substrate supporters 301 are supported on a pair of second substrate supporters 303 each having a similar structure to that of the first ones 301 but having a larger size. The two second substrate supporters 303 are arranged so that the grooves 305 are opposed to each other and are connected by a shaft 306 to each other at the center of the grooves 305 as the substrate supporters 1 in Example 1. Such a series connection of substrate supporters is arranged above a material supply 5 (not shown). Then, as illustrated in detail in Fig. 11(b), when the second substrate supporters 303 are driven to be rotated, the second substrate supporters 301 rotate in the grooves 302 of the first ones 303 and the substrates 3 included in the groove 305 of the first substrate supporters 301 rotates in the first substrate supporters 301. A film of diamond-like carbon is formed on cylindrical substrates 3 in the apparatus of this Example. Thirty substrates are set in a first substrate supporter 301 and six first substrate supporters 301 are set in the second ones 303. Thus, a film is formed on a total of one hundred and eighty substrates 3. In order to investigate the relation of the size of first substrate supporter 301 and the falling of substrates 3, five sizes of first substrate supporters are prepared, and thirty five substrates 3 are set in the substrate supporters 1 to form a thin film. Table 14 summarizes the data of the size "A" - "E" of the first substrate supporters 301 and the number of substrates which fall from the substrate supporters 301. kind of substrate A B C D E size of supporter b (mm) 5 7 8 3 5 a (mm) 3 3 5 1 2 c (mm) 2 3 3 3 2 m (mm) 8 8 8 4 5 L (mm) 11 11 11 8 8 number of fallen substrates 0 111 89 0 96 Only in cases of substrate supporters "A" and "D", no substrates 3 fall, and a uniform thin film can be formed on every substrate 3. Similarly, the falling of first substrate supporter 301 from the second ones 303 is examined by using three kind of sizes "A" - "C" for first substrate supporters of size "A". kind of substrate A B C size of supporter b₂ (mm) 7 7 8 a₂ (mm) 5 5 4 c₂ (mm) 3 6 4 m₂ (mm) 20 20 20 L₁ (mm) 25 25 24 drop of supporter no yes yes Only in a case of substrate supporters "A", no substrates fall, and a uniform thin film can be formed on every substrate 3. Then, a film is formed in the following experiments in the condition that substrates 3 or first substrate supporters 301 do not fall. The quality of substrates 3 on which a film of diamond-like carbon will be explained. First, the uniformity of film is examined. Table 16 summarizes the film thickness data of ten substrates "A" - "J" extracted arbitrarily from thirty substrates. It is found that the scattering is ±5% or less, and this shows that a film is formed uniformly. Next, the quality of film is evaluated by using the above-mentioned evaluation method. The results on two substrates extracted arbitrarily from the thirty are summarized in Table 17 as well as those on two substrates obtained with the prior art apparatus. The amount of friction is of the same order between the two apparatuses, and it is confirmed that the quality of film obtained in this Example is equal to that of prior art. method of forming film prior art this invention amount of friction (µm) substrate substrate A 0.07 C 0.08 B 0.09 D 0.08 Next, the deviation from circularity of substrate 3 is measured, and the bending of substrate 3 is compared with that of substrates measured with the prior art apparatus. Table 17 compiles the results on the bending of the substrates after the film-forming process. As to the two samples prepared by the prior art apparatus, the bending is more than 1 µm. On the contrary, as to the two samples prepared in this Example, the bending is 0.1 µm. That is, when the apparatus of this Example is used, the precision does not change at all after film-forming process. Therefore, it is confirmed that the precision can be improved to a large extent when compared with prior art. method of forming film prior art this invention amount of bending (µm) substrate substrate A 1.5 C 0.1 B 1.4 D 0.1 Then, the productivity of the apparatus of this Example is compared with that of prior art, as in Example 1. Table 19 summarizes the results on the productivity. It is found that the number of processed substrates per hour increases by about twenty times compared with the prior art method. Thus, the number of processed substrates can be improved to a large extent while keeping the quality and uniformity of film same even if the size of a substrate is small. In the above-mentioned Example, a film is formed on a substrate by using a two series of substrate supporters. However, a three series or more of substrate supporters may also be used. The material of substrate supporters 301 will be explained below. If a film to be formed is made of a diamond-like carbon, the material of the inner surface of the groove 2a for first supporting substrates 301 is preferably brass, gold or silver. Because a diamond-like carbon is difficult to adhere to these materials, the side surface of the groove 2a can be kept in a clean state wherein little film adheres to the surface. Thus, an electrical bias voltage can be applied well via the side surface to substrates 3. Four cases wherein the side surface of the groove 2a is plated with gold, silver and brass and is made of stainless steel are examined. The film-forming conditions of diamond-like carbon are the same in Example 1, and the operation of fifty cycles are performed by using the four kinds of substrate supporters 1. A change in the electrically conducting state is observed between the substrate supporters 1 and the substrates 3 as time passes. Fig. 12 shows the resistance between the substrate supporters and the substrates as the operation cycle of the apparatus is increased. If the substrate supporters 301 are made from stainless steel, the resistance increases to 20 kΩ when the operation cycle becomes thirty five. The resistance drop in bias electric potential due to the existence of the resistance is about 200 V, and this makes it difficult to apply an effective bias potential. On the contrary, if the side surface of the substrate supporters 1 are made by using plating with brass, gold or silver, the resistance increases a little with increase in operation cycle. However, the resistance drop in bias electric potential due to the existence of the resistance is only about 10 V, and this affects little to the film-forming operation, and good electrical conductance is kept on. Further, Table 20 summarizes the quality of film by using the above-mentioned friction test. If the first substrate supporters 301 are made from stainless steel, there is a tendency that the film quality is deteriorated according to the electrical resistance. On the contrary, if the inner side surface of the substrate supporters 301 are made by using plating with brass, gold or silver, the film quality is not recognized to change. number of operation cycle amount of friction when SUS supporters are used (µm) amount of friction when gold plating is used (µm) amount of friction when silver plating is used (µm) amount of friction when brass supporters are used (µm) 5 0.07 0.07 0.07 0.07 10 0.07 0.07 0.07 0.07 15 0.07 0.07 0.07 0.07 20 0.07 0.07 0.07 0.07 25 0.07 0.07 0.07 0.07 30 0.07 0.07 0.07 0.07 35 0.15 0.07 0.07 0.07 40 0.20 0.07 0.07 0.07 45 0.20 0.07 0.07 0.07 50 0.20 0.07 0.07 0.07 The fact that the film quality is affected by the material of the side surface of the groove 302a is ascribable to the amount of the film adhered to the inner surface on which substrates 3 are supported, as explained above after Table 13. Therefore, if at least the side surface of the groove is made from gold, silver or brass, a film adhered to the side surface can be removed easily and the maintenance of the apparatus becomes easy. It is to be noted that an alloy material of gold, silver or copper can realize a similar effect to pure gold or the like. Further, this type of combination can be extended to a nesting structure of substrate supporters. That is, a pair of (n+1)-th substrate supporters each having an (n+1)-th recess supports the ends of a plurality of n-th substrate supporters. A pair of the innermost substrate supporters supports a plurality of cylindrical substrates. A pair of the outermost substrate supporters can be driven to be rotated. As the outermost substrate supporters are driven, the cylindrical substrates as well as the other substrate supporters are rotated, and a thin film can be formed uniformly on the substrates. In order to prevent the dropping of substrates and nested substrate supporters, the length L n of the n-th substrate supporter (wherein zeroth substrate supporter designates the rod-like substrate), the inner diameter b n of the n-th recess, the depth c n of the n-th recess, the diameter a n+1 of the n-th connecting shaft and the distance m n between the n-th recesses arranged opposite to each other satisfy the following relation: L n 2 > (m n+1 + c n+1 ) 2 + b n+1 2 - a n+1 2 . In the above-mentioned Examples, a substrate 3 is cylindrical. However, the present invention is not limited to cylindrical substrates. For example, a substrate having for example a polygonal section may also be used. Further, the shape of the recess of the substrate supporter for rotating the substrates is not limited to have a cylindrical wall portion. For example, the shape may be elliptical or polygonal so that the substrates can be rotated on the wall portion. Further, particles for depositing a film 9 are ions in the above-mentioned examples. However, other film-forming technique such as deposition or sputtering may be used. Still further, the material of a thin film to be deposited is not limited to a diamond-like carbon, and other materials such as a metal of aluminium, gold or the like or a compound of TiO₂, SiO₂, TiC or the like may also be used. Although the present invention has been fully described in connection with the preferred embodiments thereof with reference to the accompanying drawings, it is to be noted that various changes and modifications are apparent to those skilled in the art. Such changes and modifications are to be understood as included within the scope of the present invention as defined by the appended claims unless they depart therefrom.

Claims: A method for forming a thin film, comprising the steps of: providing a pair of substrate supporters (1; 201), each substrate supporter having a recess (2; 202) around the rotation axis of the substrate supporter (1; 201), each substrate supporter (1; 201) being arranged so that the recesses (2; 202) are separated from and opposite to each other; supporting the ends of rod-like substrates (3) on the recesses (2; 202) of the substrate supporters (1; 201); rotating the pair of the substrate supporters (1; 201) so as to rotate the substrates (3) due to the friction between the substrate supporters (1; 201) and the substrates (3); and supplying particles for depositing a film on the rod-like substrates (3) from a deposition source (5) arranged at a side opposite to the substrates (3) with respect to the rotation axis of the substrate supporters (1; 201). The method of Claim 1, wherein the recess (2; 202) of said substrate supporters (1; 201) has a cylindrical side wall. The method of Claim 1, wherein particles (9) including ions are provided by said deposition source (5) while a bias electric potential is applied to said rod-like substrates (3). An apparatus for forming a thin film, comprising: a pair of substrate supporters (1; 201), each substrate supporter (1; 201) having a recess (2; 202) for in use supporting one or a plurality of rod-like substrates (3) on the side wall portion of the recess (2; 202), each substrate supporter (1; 201) being arranged separated from the other so that the recesses (2; 202) are opposite to each other and in use support rod-like substrates (3) between the recesses (2; 202), said pair of substrate supporters (1; 201) being able to be driven to be rotated; and a deposition source (5) for supplying particles to form a film on the rod-like substrates (3), which source (5) being arranged at a side opposite to the rod-like substrates (3) with respect to the rotation axis of the substrate supporters (1; 201). The apparatus of Claim 4, wherein the recesses (2; 202) of said substrate supporters (1; 201) have a cylindrical side wall, said substrate supporter (1; 201) comprising a connecting shaft (4) for connecting said pair of the substrate supporters (1; 201) at the centers of the recesses (2; 202). The apparatus of Claim 5, wherein, if said rod-like substrate (3) to be coated in use of the apparatus is cylindrical and the length of the rod-like substrate (3) is L, the inner diameter b of the recess (2; 202) of said substrate supporter (1; 201), the depth c of the recess (2; 202), the diameter a of said connecting shaft (4) and the distance m between the recesses (2; 202) satisfy the following relation: L 2 > (m+c) 2 + b 2 - a 2 . The apparatus of Claim 4 or 5, wherein said substrate supporters (1; 201) are made from a material which has a bad adhesion characteristic to a film to be deposited on the rod-like substrate (3), at least at the top surface layer of the side portion of said recess (2; 202) to which particles (9) arrive from said deposition source (5). The apparatus of Claim 4 or 5, wherein the side wall portion of the recesses (2; 202) is made from a material including at least one of gold, silver and copper. The apparatus of Claim 4, further comprising a cover (215) arranged between said pair of substrate supporters (200), said cover including a hollow space so as in use not to hinder the movement of said substrates, said cover (215) comprising a window (214) at a region opposing said deposition source (15), whereby in use particles (9) from said deposition source (215) come through the window to the substrates (3). A method for forming a thin film, comprising the steps of: providing a pair of substrate supporters (101), each substrate supporter (101) having the same number of a plurality of recesses (102) around the rotation axis of the substrate supporter (101), each substrate supporter (101) being arranged so that the recess (102) is separated from and opposite to the counterpart of the other substrate supporter (101); supporting the ends of rod-like substrates (3) on the recesses (102) of the substrate supporters (101); rotating the pair of the substrate supporters (101) so as to rotate the substrates (3) due to the friction between the substrate supporters (101) and the substrates (3); and supplying particles (9) for depositing a film on the rod-like substrates (3) from a deposition source (5) arranged at a side opposite to the substrates (3) with respect to the rotation axis of the substrate supporters (101). The method of Claim 10, wherein particles (9) including ions are provided by said deposition source (5) while a bias electric potential is applied to said rod-like substrates (3). An apparatus for forming a thin film, comprising: a pair of substrate supporters (101), each substrate supporter (101) having the same number of a plurality of recesses (102) for in use supporting rod-like substrates (3) at the side wall portion of the recesses (102), each recess (102) of one of the substrate supporters (101) being located at the same position as that of the counterpart of the other substrate supporter (101), each substrate supporter (101) being arranged separated from and opposite to each other, said pair of substrate supporters (101) being able to be driven to be rotated; and a deposition source (5) for in use supplying particles (9) to form a film on rod-like substrates (3) supported on the substrate supporters (101), which deposition source (5) being arranged at a side opposite to the rod-like substrates (3) with respect to the rotation axis of the substrate supporters (101). The apparatus of Claim 12, wherein the recess (102) of said substrate supporters (101) has a cylindrical side wall. The apparatus of Claim 12, further comprising a connecting shaft (4) for connecting said pair of the substrate supporters (101) at the centers of the substrate supporters (101). The apparatus of Claim 12, wherein said substrate supporters (101) are made from a material which has a bad adhesion characteristic to a film to be deposited on the rod-like substrates (3), at least at the top surface layer of the side portion of said recesses (102) to which particles (9) arrive from said deposition source (5). The apparatus of Claim 15, wherein the side wall portion of the recesses (102) is made from a material including at least one of gold, silver and copper. A method for forming a thin film, comprising the steps of: providing a plurality of pairs of first substrate supporters (301), each of a pair of first substrate supporters (301) having a first recess (302) around the central axis of the first substrate supporter (301), each pair of first substrate supporter (301) being arranged so that the first recesses (302) of the pair of first substrate supporters (301) are separated from and opposite to each other; supporting the ends of rod-like substrates (3) on the first recesses (302) of a pair of the first substrate supporters (301); providing a pair of second substrate supporters (303), each second substrate supporter (303) having a second recess (305) around the rotation axis of the second substrate supporter (303), each second substrate supporter (303) being arranged so that the second recesses (305) are separated from and opposite to each other; supporting the ends of said pairs of first substrate supporters (301) on the second recesses (305) of the second substrate supporters (303); rotating the pair of the second substrate supporters (303) so as to rotate the substrate (3) due to the friction between the first substrate supporters (301) and the substrates (3) and between the first substrate supporters (301) and the second substrate supporters 303); and supplying particles (9) for depositing a film on the rod-like substrates (3) from a deposition source (5) arranged at a side opposite to the substrates (3) with respect to the rotation axis of the second substrate supporters (303). The method of Claim 17, wherein the first recess (302) of said first substrate supporters (301) has a cylindrical side wall. The method of Claim 17, wherein the second recess (305) of said second substrate supporters (303) has a cylindrical side wall. The method of Claim 17, wherein particles (9) including ions are provided by said deposition source (5) while a bias electric potential is applied to said rod-like substrates (3). An apparatus for forming a thin film, comprising: a plurality of pairs of first substrate supporters (301), each first substrate supporter (301) having a first recess (302) for in use supporting a plurality of rod-like substrates (3) on the side wall portion of the first recess (302), each first substrate supporter (301) being arranged separated from the other so that the first recesses (302) of a pair of first substrate supporters (301) are opposite to each other; a pair of second substrate supporters (303), each second substrate supporter (303) having a second recess (305) for in use supporting the first substrate supporters (301) on the side wall portion of the second recess (305), each second substrate supporter (303) being arranged separated from the other so that the second recesses (305) are opposite to each other, said pair of second substrate supporters (303) being able to be driven to be rotated; and a deposition source (5) for in use supplying particles (9) to deposit a film on the rod-like substrates (3), which source (5) being arranged at a side opposite to the rod-like substrates (3) with respect to the rotation axis of the second substrate supporters (303). The apparatus of Claim 21, wherein the first recesses (302) have a cylindrical side surface, said first substrate supporters (301) comprising a first connecting shaft (304) for connecting said pair of the first substrate supporters (301) at the centers of the recesses (302) so that the first recesses (302) and the shaft (304) form a ring-shaped space to support the substrates (3). The apparatus of Claim 22, wherein the second recesses (305) have a cylindrical side surface, said second substrate supporters (303) comprising a second connecting shaft (306) for connecting said pair of the second substrate supporters (303) at the centers of the recesses (305) so that the second recesses (305) and the shaft (306) form a ring-shaped space to support the first substrate supporters (301). The apparatus of Claim 22, wherein, if the rod-like substrates (3) to be coated in use of the apparatus are cylindrical and the length of the rod-like substrate (3) is L, the inner diameter b of the first recess (302), the depth c of the first recess (302), the diameter a of the connecting shaft (306) and the distance m between the first recesses (302) arranged opposite to each other satisfy the following relation: L 2 > (m+c) 2 + b 2 - a 2 . The apparatus of Claim 21, comprising a nest of a plurality of n-th substrate supporters including said first and second substrate supporters (wherein "n" designates a natural number from zero to a maximum), each n-th substrate supporter having an n-th recess around the rotation axis of the n-th substrate supporter for in use supporting (n-1)-th substrate supporters, each of a pair of the n-th substrate supporters being arranged separated from the other of the pair so that the n-th recesses of the pair are opposite to each other, a pair of (n+1)-th substrate supporters supporting n-th substrate supporters on the (n+1)th recesses of the pair of (n+1)-th substrate supporters, the pair of the outermost substrate supporters being able to be driven to be rotated. The apparatus of Claim 25, further comprising a connecting shaft for connecting a pair of n-th substrate supporters. The apparatus of Claim 25, wherein, if the rod-like substrates (3) to be coated in use of the apparatus are cylindrical and the length of the n-th substrate supporter (wherein zeroth substrate supporter designates the rod-like substrate) (3) is L n , the inner diameter b n of the n-th recess, the depth c n of the n-th recess, the diameter a n+1 of the n-th connecting shaft and the distance m n between the n-th recesses arranged opposite to each other satisfy the following relation: L n 2 > (m n+1 + c n+1 ) 2 + b n+1 2 - a n+1 2 . The apparatus of Claim 21 or 22, wherein said first substrate supporters (301) are made from a material which has a bad adhesion characteristic to a film to be deposited, at least at the top surface layer of the side portion of said first recesses (302) to which particles arrive from said deposition source. The apparatus of Claim 21 or 22, wherein the side wall portion of said first recesses (302) is made from a material including at least one of gold, silver and copper.

Inventors: KUROKAWA HIDEO, MITANI TSUTOMU, NAKAUE HIROKAZU, KUROKAWA, HIDEO, MITANI, TSUTOMU, NAKAUE, HIROKAZU
Applicants: MATSUSHITA ELECTRIC IND CO LTD, MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
Application year: 1991
Main classification: C23C14
IPC codes: C23C14, C23C16