Hysteresis comparator

Abstract: In a hysteresis comparator for comparing an input Vin1 with another input Vin2, the comparator comprises a pair of first and second transistors (Q1, Q2). The gate of the first transistor (Q1) is supplied with the input Vin1 and the gate of the second transistor (Q2) is supplied with the input Vin2. Their collectors are connected to a power supply. The emitter of the first transistor is connected to a first current source (I₁) and the emitter of the second transistor is connected to a second current source (I₂). The comparator further comprises a circuit (105) for detecting an emitter voltage difference between the first and second transistors and varying at least one of the first and second current sources. Therefore, the hysteresis width can be determined by the collector current ratio of specific transistors, regardless of the absolute values of their collector currents.

Description: The present invention relates to a hysteresis comparator, comprising a first transistor which has its collector connected to a first power supply terminal, its base connected to a first input terminal, and its emitter connected to a second power supply terminal via a first current source; a second transistor which has its collector connected to the first power supply terminal, its base connected to a second input terminal, and its emitter connected to the second power supply terminal via a second current source; and a sensing and varying means for sensing the emitter voltage difference between the first and second transistors and based on the sensed result, varying at least one of the first and second current sources, according to the preamble portion of claim 1. The present invention also relates to a hysteresis comparator, comprising a first transistor which has its collector connected to a first power supply terminal, its base connected to a first input terminal, and its emitter connected to a second power supply terminal via a first current source; and a second transistor which has its collector connected to the first power supply terminal, its base connected to a second input terminal, and its emitter connected to the second power supply terminal via a third current source, according to the preamble portion of claim 4. Such comparator circuits are known from EP-A-0 055 573 disclosing a comparator circuit providing a hysteresis characteristic which does not change its hysteresis width even if the power supply voltage changes. In detail, the comparator circuit comprises a differential amplifier including an input terminal, a reference terminal and an output terminal; an input voltage terminal to which an input voltage is applied; a reference voltage terminal to which a reference voltage is applied; at least one level shift device connected between the input voltage terminal and the input terminal, and between the reference voltage terminal and the reference terminal; a current source device connected to the output of the level shift device; and a control device for controlling the current value of the current source device in accordance with the output level of the output terminal. In US-A-4 456 887 there is described a differential amplifier with added current mirror circuits whereby the amplifier differential outputs are taken from one or both of the current paths in the current mirror circuit so that the relationship between input and output signals will be independent of the base-emitter voltages of the differential transistors. Here, the current ratios in the current mirror circuits are selected via resistors so as to guarantee that the variation ranges are the base-emitter voltages of different transistors increase or decrease according to predefined relations so as to guarantee that the output voltage is substantially linearly proportional to the input voltage. A conventional hysteresis comparator is disclosed in the Published Examined Japanese Patent Application Number 53-17029 and has a small hysteresis width and allowing two-terminal input. The phrase "hysteresis width" is used in the specification to means a voltage difference between a value of an input voltage in which a state of an output voltage is inverted and another value of the input voltage in which another state of the output voltage is inverted. Such a hysteresis comparator has problems with the stability of hysteresis width and the operating regions of circuit elements. These two problems will be explained briefly, referring to Fig. 1. With the hysteresis-width stability problem, increasing the area ratio N 1 of p-n-p transistors Q62 to Q61 and the area ratio N 2 or p-n-p transistor Q72 to Q71 results in the change of the hysteresis width by the increased amount of base currents flowing through these p-n-p transistors Q61, Q62, Q71, and Q72. The same holds true even if those area ratios are relatively small, for example, N 1 = 2 and N 2 = 2. For IC fabrication, p-n-p transistors Q61, Q62, Q71, and Q72 must be fabricated in lateral structure, resulting in a small current gain h FE . The small current gain makes it difficult to control the collector current, leading to the unstable hysteresis width. If p-n-p transistors Q61, Q62, Q71, and Q72 are replaced with n-p-n transistors, this requires input transistors Q51 and Q52 to be lateral p-n-p transistors, which raises an input current problem. With the operating region problem, the operation of p-n-p transistors Q62 and Q72 in the saturation region is not only undesirable for faster operation and but also liable to develop parasitic elements. As mentioned above, while conventional hysteresis comparators feature two-terminal input and their small hysteresis width, they have problems with the stability of hysteresis width and the operating regions of circuit elements. Accordingly, the object of the present invention is to provide a hysteresis comparator that allows differential input, such as two-terminal input, has a small stable hysteresis width, and permits all circuit elements to operate in their active operating regions. This object is accomplished for a hysteresis comparator of the first type outlined above in that the first current source comprises a third transistor and a fourth transistor and the second current source comprises a fifth transistor and a sixth transistor, whereby the basis of the third to sixth transistors are connected to the sensing and varying means, and a hysteresis width of the hysteresis comparator depends both on a first collector current ratio of the third and sixth transistors and a second collector current ratio of the fourth and fifth transistors and is controlled by the sensing and varying means via the basis of the third to sixth transistors. The object is also accomplished in a hysteresis comparator of the second type outlined above in thatthere is provided a third transistor which has its collector connected to the first power supply terminal, its base connected to the first input terminal, and its emitter connected to the second power supply terminal via a second current source, a fourth transistor which has its collector connected to the first power supply terminal, its base connected to the second input terminal, and its emitter connected to the second power supply terminal via a fourth current source, and sensing and varying means for sensing the emitter voltage difference between the first through fourth transistors and based on the sensed results, varying at least one of the first through fourth current sources. In the former embodiment, at least one of the first and second current sources is variable based on the emitter voltage difference between the first and second transistors, while in the latter embodiment, at lease one of the first through fourth current sources is variable based on the emitter voltage difference between the first through fourth transistors. Therefore, a hysteresis comparator according to either of these embodiments not only provides a stable hysteresis width but also allows all circuits elements to operate in their active regions. This invention can be more fully understood from the following detailed description when taken in conjunction with the accompanying drawings, in which: Fig. 1 is a circuit diagram of a conventional hysteresis comparator; Fig. 2 is a circuit diagram for a hysteresis comparator according to a first embodiment of the present invention; Fig. 3 is a circuit diagram showing a concrete composition of the hysteresis comparator of Fig. 2; Fig. 4 is an operating characteristic diagram for the hysteresis comparator of Fig. 3; Fig. 5 is a circuit diagram illustrating another composition of the hysteresis comparator of Fig. 2; Fig. 6 is a circuit diagram for a hysteresis comparator in accordance with a second embodiment of the present invention; and Fig. 7 is a circuit diagram showing a concrete arrangement of the hysteresis comparator in Fig. 6. Referring to the accompanying drawings, embodiments of the present invention will be now explained in detail. Fig. 2 is a circuit diagram for a hysteresis comparator according to a first embodiment of the present invention. An n-p-n transistor Q1 (a first transistor) has its collector connected to a first power supply terminal 101 and its base connected to a first input terminal 102. An n-p-n transistor Q2 (a second transistor) has its collector connected to a first power supply terminal 101 and its base connected to a second input terminal 103. The emitter of the transistor Q1 is connected to a second power supply terminal 104 via a first current source I 1 , while the emitter of the transistor Q2 is connected to a second power supply terminal 104 via a second current source I 2 . The emitters of transistors Q1 and Q2 are each connected to a comparator 105. The comparator 105, which senses the difference between the input voltages V IN1 and V IN2 for transistors Q1 and Q2, or the emitter voltage difference between transistors Q1 and Q2, can vary at least one of the first and second current sources I 1 and I 2 . Namely, the hysteresis comparator of Fig. 2 is characterized in that the emitter currents flowing through the n-p-n transistors Q1 and Q2 connected to the first and second input terminals 102 and 103 in emitter follower form are controlled so as to produce a specified offset voltage between the first and second input terminals 102 and 103. Fig. 3 is a circuit diagram showing a concrete construction of the hysteresis comparator of Fig. 2. The comparator 105 is composed of a third current source I 3 , p-n-p transistors Q3 and Q4, n-p-n transistors Q25 and Q26, and resistors R 1 and R 2 . Specifically, the p-n-p transistors Q3 (a third transistor) and Q4 (a fourth transistor) have their emitters connected to each other and their connecting point is then coupled with the first power supply terminal 101 via the third current source I 3 . The base of transistor Q3 is connected to the emitter of transistor Q1, whereas the base of transistor Q4 is connected to the emitter of transistor Q2. The transistors Q3 and Q4 and the current source I 3 constitute a differential amplifier. The collectors of transistors Q25 and Q26 are connected to the collectors of transistors Q3 and Q4, respectively. The emitters of transistors Q25 and Q26 are both connected to the second power supply terminal 104. The transistors Q25 and Q26 have their bases connected to each other and their connecting point is connected to the collector of the transistor Q25 via the resistor R 1 and to the collector of the transistor Q26 via the resistor R 2 . The first current source I 1 is comprised of n-p-n transistors Q21 and Q24, while the second current source I 2 is composed of n-p-n transistors Q22 and Q23. Specifically, the bases of transistors Q21 and Q23 are both connected to the collectors of transistor Q3 and Q25, whereas the bases of transistors Q22 and Q24 are both connected to the collectors of transistors Q4 and Q26. The transistors Q21 and Q24 have their collectors connected to one another and their connecting point is coupled with the emitter of the transistor Q1, whereas the transistors Q22 and Q23 have their collectors connected to one another and their connecting point is coupled with the emitter of the transistor Q2. The transistors Q21 and Q22 have their emitters connected to each other and their connecting point is coupled with the second power supply terminal via a resistor R 3 , while the transistors Q23 and Q24 have their emitters connected to one another and their connecting point is coupled with the second power supply terminal 104 via a resistor R 4 . The transistor Q27 has its base connected to both bases of transistors Q21 and Q23 and its collector to a first output terminal 106, whereas the transistor Q28 has its base connected to both bases of transistors Q22 and Q24 and its collector to a second output terminal 107. The transistors Q27 and Q28 have their emitters connected to each other and their connecting point is coupled with the second power supply terminal 104. The transistors Q25 and Q26 have their bases connected to one another. The resistor R 1 is connected across the base and collector of the transistor Q25, while the resistor R 2 is connected across the base and collector of the transistor Q26. The bases of transistors Q27, Q21, and Q3 are connected via the resistors R 1 and R 2 with the bases of transistors Q24, Q2, and Q28. The operation of the hysteresis comparator is now explained in detail, referring to Fig. 3. In a case where the relationship of the voltage V IN1 applied to the first input terminal 102 and the voltage V IN2 applied to the second input terminal 103 is V IN1 << V IN2 , the differential amplifier composed of transistors Q3 and Q4 puts transistors Q21 and Q23 in the on state and transistors Q22 and Q24 in the off state, because the transistor Q3 is in the on state. If the ratio of transistor Q21's collector current I C(Q21) to transistor Q23's collector current I C(Q23) is I C(Q21) : I C(Q23) = 3 : 1 , for example, then the first current source I 1 will carry the amount of current three times that flowing through the second current source I 2 . Therefore, the base-to-emitter voltage V BE(Q1) of the transistor Q1 will be: V BE(Q1) = V T ℓ n I C(Q21) I s The base-to-emitter voltage V BE(Q2) of the transistor Q2 will be: V BE(Q2) = V T ℓ n I C(Q23) I s in which V T = kT q where k is the Boltzmann constant, T absolute temperature, q the amount of charge, and I S saturation current. Thus, the base-to-emitter voltage difference V BE(Q1-Q2) between transistors Q1 and Q2 will be: V BE(Q1-Q2) = V BE(Q1) - V BE(Q2) = V T ℓ n I C(Q21) I C(Q23) = V T ℓ n 3 ≈ 28.6 mV Since the base-to-emitter voltage V BE(Q1) of the transistor Q1 is approximately 28.6 mV larger than the base-to-emitter voltage V BE(Q2) of the transistor Q2, the levels of output voltages V OUT1 and V OUT2 will not be reversed unless the input voltage V IN1 applied to the Q1's base meets the following condition: V IN1 > V IN2 + 28.6 mV On the other hand, under the condition of V IN1 >> V IN2 , the differential amplifier comprised of transistors Q3 and Q4 puts transistors Q22 and Q24 in the on state and transistors Q21 and Q23 in the off state, because the transistor Q4 is in the on state. If the ratio of transistor Q22's collector current I C(Q22) to transistor Q24's collector current I C(Q24) is I C(Q22) : I C(Q24) = 3 : 1, for example, then the second current source 12 will carry the amount of current three times that flowing through the first current source I 1 . Therefore, the base-to-emitter voltage V BE(Q1) of the transistor Q1 will be: V BE(Q1) = V T ℓ n I C(Q24) I s The base-to-emitter voltage V BE(Q2) of the transistor Q2 will be: V BE(Q2) = V T ℓ n I C(Q22) I s Thus, the base-to-emitter voltage difference V BE(Q2-Q1) between transistors Q2 and Q1 will be: V BE(Q2-Q1) = V BE(Q2) - V BE(Q1) = V T ℓ n I C(Q22) I C(Q24) = V T ℓ n 3 ≈ 28.6 mV Since the base-to-emitter voltage V BE(Q2) of the transistor Q2 is nearly 28.6 mV larger than the base-to-emitter voltage V BE(Q1) of the transistor Q1, the levels of output voltages V OUT1 and V OUT2 will not be inverted unless the input voltage V IN2 applied to the Q2's base fulfills the following condition: V IN2 > V IN1 + 28.6 mV Based on the expressions (1) and (2), it can be seen that.a hysteresis loop is obtained as shown Fig. 4, by using the voltage V IN1 applied to the transistor Q1's base as a parameter, in which the hysteresis width is denoted by the voltage difference between the input voltage (V IN2 + 28.5) in which the state of the output voltage is inverted and the input voltage (V IN2 - 28.5) in which the state of the output voltage is inverted. The hysteresis width is determined by both the current ratio of the transistor Q21's collector current I C(Q21) to the transistor Q23's collector current I C(Q23) (I C(Q21 ) : I C(Q23) ) and the current ratio of the transistor Q22's collector current I C(Q22) to the transistor Q24's collector current I C(Q24) (I C(Q22) : I C(Q24) ). That is, changing each of these two current ratios makes it possible to change the voltage at which the state is inverted. With such a configuration, in addition to differential input (e.g., two-terminal input) and a small hysteresis width, the hysteresis comparator provides a stable hysteresis width (or less dependence on the transistor's current gain h FE ). As described above, what determines the hysteresis width is the collector current ratio of transistors Q21 to Q23 and the collector current ratio of transistors Q22 to Q24 but has nothing to do with the absolute values of those currents. In connection with this, although the absolute current values of transistors Q21 through Q24 vary with the current gain h FE of n-p-n transistors, it is possible to reduce variations in their resistance ratio and area ratio to a minimum, thereby accomplishing the stable hysteresis width. Moreover, in this arrangement, all circuit elements operate in the active regions, which not only speeds up circuit operation but also makes it difficult for parasitic elements to develop. Fig. 5 is a circuit diagram for another composition of the hysteresis comparator in Fig. 2. Like parts are indicated by like reference characters in Figs. 5 and 3 and their explanation will be omitted. The emitter of a p-n-p transistor Q5 (a third transistor) is connected to both the emitters of n-p-n transistors Q7 (a fifth transistor) and Q9, whereas the emitter of a p-n-p transistor Q6 (a fourth transistor) is connected to both the emitters of n-p-n transistors Q8 (a sixth transistor) and Q10. The bases of the transistors Q7 through Q10 and the collectors of the transistors Q9 and Q10 are connected to one another and their connecting point is coupled with the first power supply terminal 101 via the third current source I 3 . The collector of the transistor Q7 is connected to both the base and collector of a p-n-p transistor Q11, while the collector of the transistor Q8 is connected to the collector of a p-n-p transistor Q12. The transistors Q11 and Q12 have their bases connected to each other and their emitters both connected to the first power supply terminal 101. The collectors of the transistors Q8 and Q12 are connected to the base of a transistor Q13. The p-n-p transistor Q13 has its emitter connected to the first power supply terminal 101 and its collector to the output terminal 108. With this arrangement, the hysteresis comparator has the same effect as that of Fig. 3. Fig. 6 is a circuit diagram for a hysteresis comparator according to a second embodiment of the present invention. The n-p-n transistors Q1 (a first transistor) and Q11 (a second transistor) have their collectors both connected to a first power supply terminal 101 and their bases both connected to a first input terminal 102. The n-p-n transistors Q2 (a third transistor) and Q12 (a fourth transistor) have their collectors both connected to the first power supply terminal 101 and their bases both connected to a second input terminal 103. The emitter of the transistor Q1 is connected to a second power supply terminal 104 via a first current source I 1 , while the emitter of the n-p-n transistor Q11 is connected to the second power supply terminal 104 via a second current source I 11 . The emitter of the n-p-n transistor Q2 is connected to the second power supply terminal 104 via a third current source I 2 , while the emitter of the n-p-n transistor Q12 is connected to the second power supply terminal 104 via a fourth current source I 12 . The emitter of each of n-p-n transistors Q1, Q2, Q11, and Q12 is connected to a comparator 105. Based on the emitter voltage difference between the n-p-n transistors Q1, Q2, Q11, and Q12, the comparator 105 can vary at least one of the first through fourth current sources I 1 , I 11 , I 2 , and I 12 . Fig. 7 is a circuit diagram showing a concrete structure of the hysteresis comparator of Fig. 6. The comparator 105 comprises a fifth current source I 5 , p-n-p transistors Q3, Q13, Q4, and Q14, n-p-n transistors Q25 and Q26, and resistors R 1 and R 2 . Specifically, the emitters of p-n-p transistors Q3 (a fifth transistor), Q13 (a sixth transistor), Q4 (a seventh transistor), and Q14 (an eighth transistor) are connected to each other and their connecting point is coupled with the first power supply terminal 101 via the fifth current source I 5 . The base of the transistor Q3 is connected to the emitter of the transistor Q1, whereas the base of the transistor Q13 is connected to the emitter of the transistor Q11. The base of the transistor Q4 is connected to the emitter of the transistor Q2, whereas the base of the transistor Q14 is connected to the emitter of the transistor Q12. The collectors of the transistors Q3 and Q13 are connected to one another and their connecting point is coupled with the collector of the n-p-n transistor Q25. The collectors of the transistors Q4 and Q14 are connected to one another and their connecting point is coupled with the collector of the n-p-n transistor Q26. The transistors Q25 and Q26 have their emitters both connected to the second power supply terminal 104 and their bases connected to each other. This base connecting point is then coupled with the collector Q25's collector via the resistor R 1 and with the transistor Q26's collector via the resistor R 2 . The first current source I 1 is comprised of an n-p-n transistor Q21; the second current source I 11 an n-p-n transistor Q24; the third current source I 2 an n-p-n transistor Q22; and the fourth current source I 12 an n-p-n transistor Q23. Specifically, the bases of the transistors Q21 and Q23 are connected to the collectors of the transistors Q3, Q13, and Q25, while the bases of the transistors Q22 and Q24 are connected to the collectors of the transistors Q4, Q14, and Q26. The collector of the transistor Q21 is connected to the emitter of the transistor Q1; the collector of the transistor Q24 the emitter of the transistor Q11; the collector of the transistor Q22 the emitter of the transistor Q2; and the collector of the transistor Q23 the emitter of the transistor Q12. The emitters of the transistors Q21 and Q22 are connected to each other and their connecting point is coupled with the second power supply terminal 104 via a resistor R 3 . The emitters of the transistors Q23 and Q24 are connected to each other and their connecting point is coupled with the second power supply terminal 104 via a resistor R 4 . The p-n-p transistor Q27 has its base connected to the bases of the transistors Q21 and Q23 and its collector connected to a first output terminal 106, while the p-n-p transistor Q28 has its base connected to the bases of the transistors Q22 and Q24 and its collector connected to a second output terminal 107. The transistors Q27 and Q28 have their emitters connected to each other and their connecting point is coupled with the first power supply terminal 101 via a current source I 4 . With this configuration, the same effect will be obtained as with the previous arrangements. As described above, with a hysteresis comparator according to the present invention, the hysteresis width can be determined by the collector current ratio of specific transistors, totally regardless of the absolute values of their collector currents. Consequently, it is possible to provide a hysteresis comparator having a stable hysteresis width. In addition, the operation of all circuit elements in their active regions makes circuit operation faster and parasitic elements unlikely to develop.

Claims: Hysteresis comparator, comprising: a) a first transistor (Q1) which has its collector connected to a first power supply terminal (101), its base connected to a first input terminal (102), and its emitter connected to a second power supply terminal (104) via a first current source (I1); b) a second transistor (Q2) which has its collector connected to said first power supply terminal (101), its base connected to a second input terminal (103), and its emitter connected to said second power supply terminal (104) via a second current source (I2); and c) a sensing and varying means (105) for sensing the emitter voltage difference between said first and second transistors (Q1, Q2) and based on the sensed result, varying at least one of said first and second current sources (I1, I2), characterized in that d) said first current source (I1) comprises a third transistor (Q21) and a fourth transistor (Q24) and said second current source (I2) comprises a fifth transistor (Q22) and a sixth transistor (Q23), whereby the bases of said third to sixth transistors (Q21, Q24, Q22, Q23) are connected to said sensing and varying means (105), and e) a hysteresis width of said hysteresis comparator depends both on a first collector current ratio of said third and sixth transistor (Q21, Q23) and a second collector current ratio of said fifth and fourth transistor (Q22, Q24), said hysteresis being controlled by said sensing and varying means (105) via said bases of said third to sixth transistors (Q21, Q24, Q22, Q23). Hysteresis comparator according to claim 1, characterized in that said sensing and varying means (105) comprises: a) a seventh transistor (Q3) which has its base connected to said emitter of said first transistor (Q1) and its emitter connected to said first power supply terminal (101) via a third current source (I3); b) an eighth transistor (Q4) which has its base connected to said emitter of said second transistor (Q2) and its emitter connected to said first power supply terminal (101) via said third current source (I3); and c) additional varying means (R1, R2, Q25, Q26) for varying at least one of said first and second collector current ratio of said first and second current sources (I1, I2) based on collector currents of said seventh and eighth transistors (Q3, Q4). Hysteresis comparator according to claim 1, characterized in that said sensing and varying means (105) comprises: a) a seventh transistor (Q5) that has its base connected to said emitter of said first transistor (Q1); b) an eighth transistor (Q6) which has its base connected to the emitter of said second transistor (Q2); c) a ninth transistor (Q9) which has its base ccnnected to said first power supply terminal (101) via a third current source (I3) and its emitter connected to said emitter of said seventh transistor (Q5); d) a tenth transistor (Q10) which has its base connected to said first power supply terminal (101) via said third current source (I3) and its emitter connected to said emitter of said eighth transistor (Q6); and e) additional varying means (R1, R2, Q25, Q26) for varying at least one of said first and seccnd collector current ratio of said first and second current sources (I1, I2) based on collector currents of said seventh and eighth transistors (Q5, Q6) Hysteresis comparator, comprising: a) a first transistor (Q1) which has its collector connected to a first power supply terminal (101), its base connected to a first input terminal (102), and its emitter connected to a second power supply terminal (104) via a first current source (I1); and b) a second transistor (Q2) which has its collector connected to said first power supply terminal (101), its base connected to a second input terminal (102), and its emitter connected to said second power supply terminal (104) via a third current source (I2); characterized in that c) there is provided a third transistor (Q11) which has its collector connected to said first power supply terminal (101), its base connected to said first input terminal (102), and its emitter connected to said second power supply terminal (104) via a second current source (I11); and d) a fourth transistor (Q12) which has its collector connected to said first power supply terminal (101), its base connected to said second input terminal (103), and its emitter connected to said second power supply terminal (104) via a fourth current source (I12); and e) sensing and varying means (105) for sensing the emitter voltage difference between said first through fourth transistors (Q1, Q2, Q11, Q12) and based on the sensed results, varying at least one of said first through fourth current sources (I1, I2, I11, I12). Hysteresis comparator according to claim 4, characterized in that said emitter area of at least one of said first through fourth transistors (Q1, Q2, Q11, Q12) is set at a different value from those for the other transistors. Hysteresis comparator according to claim 4, characterized in that said sensing and varying means (105) comprises: a) a fifth transistor (Q3) which has its base connected to said emitter of said first transistor (Q1) and is its emitter connected to said first power supply terminal (101) via a fifth current source (I5); b) a sixth transistor (Q13) which has its base connected to said emitter of said third transistor (Q11) and its emitter connected to said first power supply terminal (101) via said fifth current source (I5); c) a seventh transistor (Q4) which has its base connected to said emitter of said seccnd transistor (Q2) and its emitter connected to said first power supply terminal (101) via said fifth current source (I5); d) an eighth transistor (Q14) which has its base connected to said emitter of said fourth transistor (Q12) and its emitter connected to said first power supply terminal (101) via said fifth current source (I5); and e) varying means (R1, R2, Q25, Q26) for varying at least one of said first through fourth current sources (I1, I2, I11, I12) based on the collector currents of said fifth through eighth transistors (Q3, Q4, Q13, Q14). Hysteresis comparator according to claim 6, characterized in that said emitter area of at least one of said fifth through eighth transistors (Q3, Q4, Q13, Q14) is set at a different value from those for the other transistors (Q1, Q2, Q11, Q12, Q25, Q26).

Inventors: YOSHIDA YOSHIHIRO, YOSHIDA, YOSHIHIRO, YOSHIDA, YOSHIHIRO, C/O INTELLECTUAL PROPERTY DIV.
Applicants: TOSHIBA KK, KABUSHIKI KAISHA TOSHIBA
Application year: 1991
Main classification: H03K3
IPC codes: H03K3, H03K5, H01L21, H01L27