Oscillation circuit

Abstract: An oscillation circuit has a differential amplifier (9) including a constant current source formed by a resistor (R7) and a transistor (Q10) whose emitter is grounded through the resistor, and a feedback circuit (8) through which an output of the differential amplifier is positively fed back to an input of the same differential amplifier. The oscillation circuit further includes a band-gap regulator (7) for producing a band-gap voltage (V BG ) proportional to a thermal voltage of transistors (Q5,Q6) forming the band-gap regulator whose emitter areas are different with each other, and an operational amplifier (6;62) for DC-amplifying the band-gap voltage and applying the amplified band-gap voltage to the base of the transistor (Q10) forming the constant current source. The oscillation circuit is capable of performing a stable oscillation against a wide range of temperature changes.

Description: BACKGROUND OF THE INVENTION The present invention relates to a transistor circuit and, more particularly, to an oscillation circuit which is capable of performing a stable oscillation against a wide range of temperature change. As shown in Fig. 1, a conventional oscillation circuit is constituted by a differential amplifier 1 which is supplied with a positive feedback signal S F and which outputs an oscillation signal S o , and a feedback circuit 2 which is supplied with the oscillation signal S o . The differential amplifier 1 is constituted by a pair of transistors Q1 and Q2, a load Z L , a constant current source I, bias resistors R1 and R2, a bypass capacitor C3, and a bias voltage source V B . The feedback circuit 2 is constituted by coupling capacitors C1 and C2, and a resonance circuit composed of a capacitor C o and an inductor L o . In the following, the operation of the conventional oscillation circuit having the above circuit construction is described. When an oscillating current is produced in the oscillation circuit, the current is resonated through the resonance circuit composed of the capacitor C o and the inductor L o with a resonance frequency f expressed as follows. f = 1 2π L 0 C 0 The resonant current is then fed to the base of the transistor Q1 through the coupling capacitor C2, and amplified by the differential amplifier 1, so that an oscillation signal S o is outputted from the collector of the transistor Q2 and then positively fed back to the base of the transistor Q1 through the coupling capacitors C1 and C2. As a result, oscillation with the same frequency as the resonance frequency is produced. That is, the oscillation frequency of the conventional oscillation circuit shown in Fig. 1 is expressed by the above equation (1). In the case of a high-frequency oscillation circuit, however, the oscillation frequency thereof cannot be expressed by the equation (1) because it is affected by the input impedance of the differential amplifier 1. The oscillation frequency of a high-frequency oscillation circuit is explained by making reference to the expressions given hereunder. Fig. 2 shows the feedback circuit 2 extracted from the conventional oscillation circuit of Fig. 1 on the assumption that an input impedance of the differential amplifier 1 viewed from the base of the transistor Q1 is expressed by Z IN . In Fig. 2, the ratio v 1 /v o , that is, a feedback factor β, is expressed as follows. In the above expressions, S =jω, and G represents the reciprocal of the resistive component r of the coil L o . When the open gain of the differential amplifier 1 is assumed to be represented by A o , a condition for oscillating ing is expressed by the following equation (4). A 0 β=1 Applying the equation (4) into the equation (3), the following equation is obtained. β= S 2 C 1 C 2 Z IN (C 0 +G·Z IN ·C 1 +C 1 +C 2 ) S+ 1 L 0 S +G+ Z IN L 0 C 1 + (Z IN C 0 C 1 +Z IN C 1 C 2 ) S 2 = 1 A 0 If the imaginary part of β is zero, the equation (5) is established and the oscillating condition is satisfied. Here, (C 0 +G· Z IN ·C 1 +C 1 +C 2 ) S+ 1 L 0 S =0 Rearranging the equation (6) by substituting S=jω thereinto, the following equation (7) is obtained. ω= 1 L 0 (C 0 +C 1 +C 2 +G·Z IN ·C 1 ) f 0 = 1 2π L 0 (C 0 +C 1 +C 2 +G·Z IN ·C 1 ) The oscillation frequency f o of the circuit can be calculated according to the equation (7). In the equation (7), the input impedance Z IN of the differential amplifier 1 may be expressed by the following equation (8) on the assumption that it is pure resistance. Z IN ≒ h fe /g m in which g m represents the mutual conductance of the differential amplifier 1, and h fe represents the current amplification factor of the transistor concerned. Substituting the above equation (8) into the equation (7), the following equation (9) is obtained. f 0 = 1 2π L 0 (C 0 +C 1 +C 2 +G·h fe ·C 1 /g m ) Thus, as expressed by the above equation (9), the oscillation frequency f o of the conventional oscillation circuit contains the mutual conductance g m of the differential amplifier 1 expressed by the following equation (10). g m = qI 4kT in which k represents a Boltzmann constant, T represents an absolute temperature, and q represents an electron charge quantity. From the above equation (10), it is understood that the mutual conductance g m changes as the temperature changes and, therefore, the oscillation frequency f o including g m changes as the temperature changes. That is, the temperature-depending fluctuation of the oscillation frequency of the oscillation circuit is large. Here, the temperature-depending fluctuation of the oscillation frequency f o is examined by substituting certain constants into the equation (9). Assuming now that G=0.001, h fe =100, g m =0.2 (at the temperature t=-25°C ) and C o =C 1 =C 2 are established and I does not change as the temperature changes, the oscillation frequency f 1 at the temperature t=-25°C can be expressed by the equation (11). f 1 = 1 2π 3.5C 0 L 0 The mutual conductance g m ' at the temperature t'=75°C can be expressed by the following equation (12). g m ' = qI 4kT' = qI 4kT . T T' = g m . 273 +t 273 +t' = g m . 273 -25 273 +75 Here, the value of g m ' at the temperature t'=75°C can be calculated by substituting 0.2 for g m as follows: g m ' ≒ 0.14 Accordingly, the oscillation frequency f 2 at the temperature t'=75°C can be expressed as follows. f 2 = 1 2π 3.71C 0 L 0 f 2 f 1 = 1 2π 3.71C 0 L 0 1 2π 3.5C 0 L 0 = 3.50 3.71 ≒ 0.97 Assuming now that f 1 is 480 MHz, f 2 = 0.97 × 480 = 466 MHz. Accordingly, in a temperature range of from -25°C to 75°C, the width of fluctuation of the oscillation frequency is 14 MHz. Thus, there has been a problem in that the temperature-depending fluctuation of the oscillation frequency is large. US-A-4 270 102 discloses an oscillator circuit according to the precharacterizing part of claim 1. This circuit comprises an oscillator and a differential amplifier with a constant current source. The constant current source has a resistor and a transistor whose emitter is grounded through that resistor. "The Electronic Engineer", Vol. 29, No. 9, September 1970, Radnor, US, W.G. Jung "Sine wave oscillator has logic level output" disclosed another oscillator circuit comprising a feedback circuit through which an output of a differential amplifier is positively feedback to an input of the differential amplifier. Further, JP-A-60-062704 discloses a temperatur compensating circuit for a voltage controlled oscillator comprising a band-gap regulator which includes a pair of first and second transistors, whose emitter areas are different from each other, which produces a band-gap voltage proportional to a thermal voltage of said pair of transistors. SUMMARY OF THE INVENTION It is, therefore, an object of the invention to overcome the drawbacks existing in the conventional oscillation circuits and to provide an improved oscillation circuit. It is another object of the invention to provide an oscillation circuit for performing oscillation with a stable oscillation frequency against temperature changes. In order to attain the above objects, there is provided an oscillator circuit according to claim 1. The dependent claims are related to further advantageous aspects of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS The above and other objects, features and advantages of the present invention will be apparent from the following description of preferred embodiments of the invention explained with reference to the accompanying drawings, in which:- Fig. 1 is a circuit diagram showing a conventional oscillation circuit; Fig. 2 is an equivalent circuit diagram of a feedback circuit used in the conventional oscillation circuit; Fig. 3 is a circuit diagram showing an embodiment of the oscillation circuit according to the present invention; Fig. 4 is a circuit diagram showing another embodiment of the oscillation circuit according to the present invention; and Fig. 5 is a graph showing the relation of the oscillation frequency versus temperature in the oscillation circuit experimentally obtained according to the invention. PREFERRED EMBODIMENTS OF THE INVENTION Throughout the following explanation, similar reference symbols or numerals refer to the same or similar elements in all the figures of the drawings. Now, embodiments of the present invention will be described below with reference to the drawings. Fig. 3 shows an embodiment of the oscillation circuit according to the present invention. The oscillation circuit is constituted by an oscillator 5, an operational amplifier 6, and a band-gap regulator 7. The oscillator 5 is constituted by a differential amplifier 9, and a feedback circuit 8. The differential amplifier 9 includes a pair of transistors Q3 and Q4. A positive feedback signal S F1 is supplied from the feedback circuit 8 to the base of the transistor Q3. The positive feedback signal is amplified by the differential amplifier, so that an oscillation signal S o1 is outputted from the collector of the transistor Q4 and positively fed back to the base of the transistor Q3 through coupling capacitors C 6 and C 5 . R 11 and R 12 represent base bias-resistors for the transistors Q3 and Q4, respectively, V B represents a base bias-source, C 7 represents a bypass capacitor, and R 6 represents a load resistor. In Fig. 3, a capacitor C o1 and an inductor L o1 in the feedback circuit 8 constitute a resonance circuit. R o1 represents a resistive component of the inductor L o1 . These elements together with the coupling capacitors C 6 and C 5 determine the oscillation frequency of the circuit. The band-gap regulator 7 is constituted by transistors Q5 through Q9, resistors r 1 , r 2 and R 1o , and a phase-compensation capacitor C 8 . The emitter area ratio of the transistors Q5 and Q6 is set to N : 1 (N>2). An output of the band-gap regulator 7, that is, a band-gap voltage, is outputted through a terminal 20. The band-gap voltage is DC-amplified by the operational amplifier 6, and then applied to the base of the transistor Q10. This transistor Q10 and a resistor R7 constitute a constant current source, and a constant current I flowing in the differential amplifier 9 is determined or controlled by the base voltage of the transistor Q10. The oscillation frequency f o5 of the oscillator 5 can be calculated according to the aforementioned equation (9). That is, the oscillation frequency f o5 is expressed by the following equation (14): f 05 = 1 2π L 01 (C 01 +C 5 +C 6 +G 01 · h fe5 · C 5 / g m5 ) in which h fe5 represents the current amplification factor of the transistor concerned, and g m5 represents the mutual conductance of the differential amplifier 9. If the mutual conductance g m5 in the equation (14) is constant regardless of the temperature change, the oscillation frequency f o5 expressed by the equation (14) is also constant against the temperature change. The band-gap voltage V BG of the band-gap regulator 7 is calculated as follows. Let I 5 and I 6 be the collector currents of the transistors Q5 and Q6, respectively. Current mirror circuit constituted by the transistors Q7 and Q8 and the feedback circuit constituted by the transistor Q9 and the resistor R10 make the collector currents I 5 and I 6 substantially equal to each other as shown in the following equation (15). I 5 = I 6 = I The base-emitter voltages of the transistors Q5 and Q6 are determined by the emitter area ratio (N) as represented by the following equations. V BE (Q6) =V BE (Q5) + r 1 I v T ℓn I 6 I S =v T ℓn I 5 NI S + r 1 I in which V T represents the thermal voltage of the respective transistors Q5 and Q6. Rearranging the equation (17) by substituting the equation (15) into the equation (17), the following equation (18) is obtained. v T ℓnN=r 1 I Because the current flowing in the resistor r 2 is 2I, the emitter voltage V E(Q6) of the transistor Q6 is expressed by the following equation (19) based on the equation (18). V E(Q6) = 2Ir 2 =2v T ℓnN r 2 r 1 Accordingly, the band-gap voltage V BG is expressed by the following equation (20). V BG = V BE (Q6) +2v T ℓnN r 2 r 1 The band-gap voltage V BG is amplified by the operational amplifier 6. As a result, an output voltage V E expressed by the following equation (21) is obtained from the operational amplifier 6 through a terminal 21. V E = (1 + R 8 R 9 ) V BG = (1 + R 8 R 9 ) (V BE (Q6) + 2v T ℓnN r 2 r 1 ) Because the output voltage V E is used as the base voltage of the transistor Q10, the collector current I C(Q10) of the transistor Q10 is expressed by the following equation (22). I C(Q10) = V E - V BE Q10 R 7 = (1 + R 8 R 9 ) (V BE Q6 + 2v T ℓnN r 2 r 1 ) - V BE Q10 R 7 Assuming now that the values of an input resistor R 8 and a feedback resistor R 9 of the operational amplifier 6 are selected to satisfy the following equation (23), the above equation (22) is rearranged to the following equation (24). (1 + R 8 R 9 ) V BE (Q6) = V BE (Q10) I C (Q10) = 2 (1 + R 8 R 9 ) v T ℓnN r 2 r 1 R 7 To simplify the equation (24), k 1 is used for the equation (25). I C(Q10) =k 1 v T here, k 1 represents 2 (1 + R 8 R 9 ) ℓnN r 2 r 1 R 7 Because I C(Q10) is a constant current of the differential amplifier 9, the mutual conductance g m5 is expressed as in the equation (26). g m5 = I C Q10 4v T Substituting the equation (25) into the equation (26), the following equation (27) is obtained. g m5 = k 1 4 Substituting the equation (27) into the aforementioned equation (14), the following equation (28) which expresses the oscillation frequency f 05 of the circuit is obtained. f 05 = 1 2π L 01 (C 01 +C 5 +C 6 +G 01 · h fe5 · C 5 · 4/k 1 ) In short, the oscillation frequency f o5 expressed in this equation (28) is constant regardless of the temperature change because it does not contain the term of temperature T . Fig. 4 shows another embodiment of the oscillation circuit according to the present invention. The only difference between this embodiment and the previous embodiment shown in Fig. 3 resides in that an operational amplifier 62 in this embodiment functions as a voltage-follower while the operational amplifier 6 in the previous embodiment functions as a non-inverting amplifier having a voltage gain of (R8+R9)/R9. The remaining circuit construction other than this operational amplifier 62 is the same as that of the first embodiment and, therefore, the aforementioned description of the operation can be applied to this embodiment, and the description is omitted here. As described above, the current of the constant current source of the differential amplifier constituting a part of the oscillation circuit according to the present invention is set so as to be proportional to the thermal voltage of the transistor. Accordingly, any parameter relating to the temperature which has an influence on the oscillation frequency can be eliminated as shown in the equation (28). The invention therefore shows an effect in that the oscillation frequency is very stable against the temperature change. The characteristic of oscillation frequency versus temperature in the oscillation circuit experimentally obtained according to the present invention is shown in Fig. 5. It is apparent from Fig. 5 that in the case where the oscillation frequency at ordinary temperature is 480 MHz, the width of fluctuation of the oscillation frequency against the temperature change in a range of from -25°C to 75°C can be effectively reduced to 1.14 MHz. While the invention has been described in its preferred embodiments, it is to be understood that the words which have been used are words of description rather than limitation and that changes within the purview of the appended claims may be made without departing from the true scope of the invention in its broader aspects.

Claims: An oscillation circuit comprising an oscillator (5) which has a differential amplifier (9) including a constant current source having a resistor (R7) and a transistor (Q10) whose emitter is grounded through said resistor, characterized by a feedback circuit (8) through which an output of said differential amplifier (9) is positively fed back to an input of the same differential amplifier, said oscillator outputting an oscillation frequency which is determined by a circuit constant of said feedback circuit and mutual conductance of said differential amplifier and which has temperature dependency characteristic, said oscillation circuit further comprises: a band-gap regulator (7) which includes a pair of first and second transistors (Q5, Q6) whose emitter areas are different from each other and which is for producing a band-gap voltage (V BG ) proportional to a thermal voltage of said pair of transistors (Q5,Q6) and an operational amplifier (6; 62) connected between said band-gap regulator and said constant current source, for DC-amplifying said band-gap voltage and applying the amplified band-gap voltage to the base of said transistor (Q10) constituting the constant current source so that temperature dependency of the mutual conductance of said differential amplifier is eliminated. An oscillation circuit according to claim 1, in which said operational amplifier (6) is a non-inverting amplifier which has an input resistor (R9) connected between an inverting input terminal (-) and a ground terminal, and a feedback resistor (R8) connected between an output terminal and said inverting input terminal (-). An oscillation circuit according to claim 1, in which said operational amplifier (62) is a voltage-follower circuit with an output terminal being directly connected to an inverting input terminal (-). An oscillation circuit according to claim 1, in which said band-gap regulator (7) includes a current mirror circuit having a third and a fourth transistor (Q7, Q8), a feedback circuit having a fifth transistor (Q9) and a resistor (R10), an output of said current mirror circuit being fed back to the respective bases of said first and second transistors (Q5, Q6). An oscillation circuit according to claim 1, in which an emitter area ratio between said first and second transistors (Q5, Q6) in said band-gap regulator (7) is N : 1 (N being N>2).

Inventors: NISHIJIMA KAZUNORI, NISHIJIMA, KAZUNORI
Applicants: NIPPON ELECTRIC CO, NEC CORPORATION
Application year: 1991
Main classification: H03B5
IPC codes: H03B5, H03L1