Distributed feedback semiconductor laser

Abstract: A distributed feedback semiconductor laser includes a diffraction grating (2) having a plurality of different pitches (Λ0, Λ1). Altough it is a multi mode laser, an oscillating mode having a longitudinal single mode characteristic is obtained. The distributed feedback semiconductor laser is thus free from nonlinear characteristics but has low-noise characteristics.

Description: The present invention relates to a distributed feedback semiconductor laser according to the preamble of claim 1. US-A-4 775 980 discloses a distributed feedback semiconductor laser provided with the grating which effects optical feedback by means of periodic corrugation disposed inside an optical resonator. The optical resonator has at least two regions having different Bragg wavelengths, and these regions are arranged longitudinally in the direction of an optical axis. The laser device can realize stable single longitudinal mode oscillation through variation of the refractive indexes of the regions nonuniformly around an average value. JP-A-2 234 485 discloses an optical amplifier, wherein a diffraction grating is provided on a waveguide layer for selecting signal light to be amplified in incident light. The diffraction grating has different grating pitches and internal phase shifts formed thereon, so that it has a plurality of resonance wavelength regions. Accordingly all signal light having a wavelength coincident with the respective region resonance wavelengths is simultaneously amplified without producing spontaneous emission, thereby assuring a good signal/noise ratio. JP-A-61 255 087 discloses a semiconductor laser oscillation device wherein in order to oscillate plural lights having different wavelengths individually, plural regions of diffraction gratings are provided which oscillate the lights of different periods in the same active layer and the same waveguide layer in an optical waveguide direction. IEEE J.Q.E., vol. QE-20, no. 3, March 1984, pages 236 to 245 discloses the effect of mirror facets of lasing characteristics of distributed feedback InGaAsP/InP laser diodes at 1.5µm range. Journal of Lightwave Technology, vol. LT-4, no. 10, October 1986, pages 1454 to 1459 discloses extremely low-noise facet-reflectivity-controlled InGaAsP distributed-feedback lasers. As is well-known, in optical fiber communications, an optical signal generated by modulating a light emitting element such as a semiconductor laser is transmitted through an optical fiber. A longitudinal single mode semiconductor laser is used for long-distance transmission in order to prevent the semiconductor laser from being deteriorated by dispersion of the optical signal in the optical fiber. A longitudinal single mode semiconductor laser having good low-noise characteristics is used in an analog multichannel image transmission such as cable television. The longitudinal single mode semiconductor laser is embodied by a distributed feedback (referred to as DFB hereinafter) semiconductor laser. As shown in Fig. 1, the DFB semiconductor laser comprises a diffraction grating 22 formed on a semiconductor substrate 21, a wave guide layer 23, an active layer 24, a clad layer 25, and a contact layer 26. A bias current I f is supplied to electrodes 27 and 28 between which the substrate 21, grating 22, and layers 23-26 are interposed, to inject the current into the active layer 24. The active layer 24 is thus oscillated and, as shown in Fig. 2, a single wavelength λ, which depends upon a pitch P of the diffraction grating 22, and composition and dimension of the wave guide layer 23 and active layer 24, can be obtained. According to the DFB semiconductor laser having the above structure, photons and electrons in the wave guide layer 23 and active layer 24 interact with each other only in the single wavelength mode. Therefore, the distribution of internal electric field is strongly influenced by conditions such as pitch P of the diffraction grating 22, refractive index of the wave guide layer 23, and dimension and precision of the active layer 24 and wave guide layer 23. If the conditions are not optimal, an extremely nonlinear output (kink) characteristic or a multi-wavelength oscillation appears in accordance with the density of the injected current. In Fig. 3, samples #1 and #4 show normal characteristics, but samples #2 and #3 show kink characteristics. As a result, there occurs problems of decrease in yield and reliability. Although the longitudinal single mode semiconductor laser having the low-noise characteristic and the low-distortion characteristic is the most suitable for the analog multichannel video transmission, it has the problem of kink characteristic. Fig. 4 is a cross sectional view showing a structure of a Fabry-Perot (referred to as FP hereinafter) semiconductor laser. As shown in Fig. 4, an active layer 34, a clad layer 35, and a contact layer 36 are formed in sequence on a substrate 31, and these layers and substrate are interposed between electrodes 37 and 38. Mirror reflecting surfaces 39a and 39b are formed on both facets of the FP semiconductor laser. Reference character L denotes length of the resonator. Fig. 5 shows power spectrum of the FP semiconductor laser. Since the FP semiconductor laser has no diffraction grating and photons and electrons interact with each other in a plurality of modes, the FP semiconductor laser is excellent in the linearity in light emitting characteristic and thus suitable for analog modulation. However, the interaction of electrons and photons in a plurality of modes causes mode partition noises, and the relative intensity of noise (RIN) of the FP semiconductor laser is greater than that of the longitudinal single mode semiconductor laser by about 20 dB. Thus FP semiconductor laser cannot be used in analog applications. As described above, in the conventional longitudinal single mode semiconductor laser having low-noise characteristic and low-distortion characteristic, photons and electrons in the active layer and wave guide layer interact with each other only in the single wavelength mode, so that the distribution of internal electric field is strongly influenced by the pitch of diffraction grating and the dimension and precision of the active layer and wave guide layer. It is accordingly an object of the present invention to provide a highly reliable DFB semiconductor laser which has low-noise and low-distortion characteristics and, which can prevent a multi-wavelengths oscillation from being generated. According to the present invention, this object is solved according to the characterizing part of claim 1. Preferred embodiments are listed in the dependent claims. According to the present invention, the diffraction grating having a plurality of different pitches is formed to control the number of oscillating wavelength modes, reduce mode distribution noises, and improve nonlinear outputs. This invention can be more fully understood from the following detailed description when taken in conjunction with the accompanying drawings, in which: Fig. 1 is a cross sectional view showing a structure of a conventional DFB semiconductor laser; Fig. 2 is a view showing the oscillation wavelength of the semiconductor laser shown in Fig. 1; Fig. 3 is a view for explaining the input current vs. output power characteristic of the semiconductor laser shown in Fig. 1; Fig. 4 is a cross sectional view showing a structure of a conventional FP semiconductor laser; Fig. 5 is a view showing the oscillation wavelength of the semiconductor laser shown in Fig. 4; Fig. 6 is a cross sectional view showing a structure of a DFB semiconductor laser according to an embodiment of the present invention; Fig. 7 is an end view showing a light emitting facet of the semiconductor laser shown in Fig. 6; Fig. 8 is a view showing the oscillation wavelength of the semiconductor laser shown in Fig. 6; Fig. 9 is a view for explaining the input current vs. output power characteristic of the semiconductor laser shown in Fig. 6; Fig. 10A is a view showing the phase of a conventional FP mode of the DFB semiconductor laser; and Fig. 10B is a view showing the phase of a FP mode of the semiconductor laser of the present invention. Embodiments of the present invention will be described with reference to the accompanying drawings. Fig. 6 is a cross sectional view showing a structure of a DFB semiconductor laser according to an embodiment of the present invention. A diffraction grating 2 having pitches different from each other by predetermined lengths is formed on an N-type semiconductor substrate 1 which is doped with InP. A wave guide layer 3 doped with InGaAsP, an active layer 4, a P-type clad layer 5 doped with InP, and a P⁺-type contact layer 6 doped with InGaAsP are formed in sequence on the diffraction grating 2. An electrode 7 is formed on the underside of the substrate 1, and an electrode 8 is formed on the contact layer 6. The pitches of the diffraction grating 2 have different values from the central value, as represented by the following equation. Λ = λ/2n r where Λ : pitch of diffraction grating λ : wavelength n r : effective refractive index of wave guide layer 3. If n r = 3.7 is used when the oscillation wavelength of the semiconductor laser is in 1.3 µm band, then, according to the equation (1), the predetermined pitch length Λ₀ = 1770Å. In the embodiment shown in Fig. 6, the diffraction grating having the pitch Λ₁ = 1771.6Å and the diffraction grating having the pitch A₀ are alternately arranged 50 µm by 50 µm. Fig. 7 is an end view showing a light emitting facet of the semiconductor laser shown in Fig. 6. The width W of the active layer 4 and the wave guide layer 3 is about 1 µm to obtain a lateral single mode. Both sides of the active layer 4 and the wave guide layer 3 are optically and electrically blocked by an N-P type reverse junction blocking layer 9 of InP. As shown in Fig. 8, the DFB semiconductor laser having the above structure has two wavelengths λ₁ (1310 nm) and λ₂ (1311 nm), and the side mode suppression ratio of two oscillation modes is 35 dB or more. Since the interactions between photons and electrons are distributed into two modes, the nonlinear output characteristic of the DFB semiconductor laser is greatly improved, resulting in improvement in yield, as is apparent from samples #1 to #4 shown in Fig. 9. This can be done even though the pitch of the diffraction grating, and the dimensions of the active layer and wave guide layer do not meet the optimum conditions. Even if the suppression ratio is 30 dB, the dispersion of optical signals in long-distance transmission is hardly affected adversely since a wavelength interval between the two oscillation modes is 1 nm. In the above embodiment, the pitch of diffraction grating is 1.3 µm; however, the same effect can be obtained even if it is 1.55 µm. In this case, a buffer layer can be formed on the active layer 4 when the need arises. The diffraction grating 2 can also be formed on the active layer 4. In the above embodiment, the diffraction grating 2 is formed so that its two pitches are alternately changed 50 µm by 50 µm. However, the present invention is not limited to 50 µm pitch and the pitches can be changed at an equal rate, at an inequable rate, or in arbitrary order. The number of pitches of the diffraction grating is not limited to two but can be three or more. A DFB semiconductor laser according to another embodiment of the present invention will be described with reference to Fig. 6. A low-noise multi mode semiconductor laser is ideal for the analog multichannel image transmission from the viewpoint of a tolerance for return light. When a high reflectance film is deposited on the facets of the DFB semiconductor laser to obtain an output of a high output, the DFB semiconductor laser includes a Fabry-Perot mode output. In the DFB semiconductor laser, therefore, it is only necessary to arrange a plurality of pitches of a diffraction grating which causes a plurality of oscillation wavelengths (see Fig. 8) having the same wavelength interval as Δλm of the Fabry-Perot mode. The wavelength interval Δλm of the Fabry-Perot mode is expressed by the following equation. Δλm = λ²/2n r ·L where Δλm : wavelength interval n r : effective refractive index of wave guide layer λ : wavelength L : length of resonator (cavity length) The pitch Λm of diffraction grating is given by the following equation. Λm = λ ± mΔλm 2n r Substituting the equation (2) for the equation (3), the pitch Λm is expressed by the following equation. Λm = λ(2n r L ± mλ) 4n r ²L (m is an integer) A diffraction grating having three kinds of pitches is formed under the condition that the central pitch is Δ₀ and m = 1. The diffraction grating is formed with the pitch Λ₀ between pitches Λ₁. If the wavelength λ is 1310 nm, the pitches of the diffraction grating are Λ₀ = 1770Å, and Λ₁ = 1771.3Å and 1769.2Å. Since the DFB semiconductor laser having the above-described structure has three oscillation modes, the DFB mode coincides with the FP mode having three or four main oscillation modes. Fig. 10A shows a phase difference between an output of the DFB mode and that of the FP mode, and Fig. 10B shows a phase coincidence between them. The DFB laser is not therefore influenced by a variation in phase due to the reflection of wave on the facet of a resonator. Since the photons and electrons interact with each other in three modes, the nonlinear output characteristic such as a kink can hardly be obtained. Further, the mode can hardly be distributed since a gain is specified by the diffraction grating, and a high relative intensity of noise peculiar to the FP semiconductor laser is improved. In the above embodiment, the wavelength λ is 1310 nm. However, it can be set to 1550 nm or the other value. Although three oscillation modes are used in the embodiment, the same effect can be obtained if the number of the modes is two or more. The refractive index of the facet of the resonator can be set at an arbitrary value. As described above, according to the present invention, from a diffraction grating having different pitches, an oscillation mode having a longitudinal single mode characteristic can be obtained although it is a multi mode. A DFB semiconductor laser having no nonlinear characteristic but low-noise characteristic can thus be provided.

Claims: A distributed feedback semiconductor laser, comprising: an active layer (4) formed on a semiconductor substrate (1) ; a waveguide layer (3) having a band gap larger than that of said active layer (4) and having a diffraction grating (2) in parallel with said active layer (4) which has two or more different pitches (Λ 0, Λ 1) formed in a direction of guided waves within a predetermined length (L); characterized in that said predetermined length (L) corresponds to a Fabry-Perot resonator length and said different pitches (Λ 0, Λ 1) are set to cause simultaneously two or more corresponding oscillation wavelengths having the same wavelength intervals as the wavelength intervals of Fabry-Perot modes occurring in said distributed feedback semiconductor laser, whereby said oscillation wavelengths coincide with said Fabry-Perot modes. A distributed feedback semiconductor laser according to claim 1, characterized in that a pitch of said diffraction grating (2) is expressed as follows: Λm = λ(2n r L±mλ) 4n r ²L where Λm : pitch of diffraction grating n r : effective refractive index of waveguide layer L : said predetermined resonator length = cavity length m : positive integer λ : oscillating wavelength. A distributed feedback semiconductor laser according to claim 1, characterized in that said different pitches (Λ 0, Λ 1) are formed to generate an oscillation mode having a longitudinal single mode characteristic. A distributed feedback semiconductor laser according to claim 1, characterized in that because said oscillation wavelengths have a phase which coincides with that of said Fabry-Perot mode, said laser is not influenced by a variation in phase due to a reflection of wave on a facet of a resonator. A distributed feedback semiconductor laser according to claim 1, characterized in that the sections of said diffraction grating having said different pitches (Λ 0, Λ 1) are alternately changed and are set to be of equal length. A distributed feedback semiconductor laser according to claim 1, characterized in that the sections of said diffraction grating having said different pitches (Λ 0, Λ 1) are alternately changed and are set to be of inequable length. A distributed feedback semiconductor laser according to claim 1, characterized in that two oscillation modes are caused by said different pitches (Λ 0, Λ 1). A distributed feedback semiconductor laser according to claim 1, characterized in that three oscillation modes are caused by said different pitches (Λ 0, Λ 1).

Inventors: CHINEN KOYU C O INTELL PROP DI, CHINEN, KOYU, C/O INTELL.PROP.DIV., K.K.TOSHIBA
Applicants: TOSHIBA KK, KABUSHIKI KAISHA TOSHIBA
Application year: 1991
Main classification: H01S3
IPC codes: H01S5