Pattern forming method

Abstract: A pattern forming method comprises the steps of forming a first layer (L1) which includes at least one first alignment mark (MI) on a substrate (SUB), forming a second layer (L2) which includes at least one first main pattern (PII) and two second alignment marks (MII-1, MII-2) on the first layer by independently aligning the second alignment marks to the first alignment mark, calculating errors of measured positions of the second alignment marks from designed values, moving the substrate based on the calculated errors, and forming a third layer (L3) which includes at least one second main pattern (PIII) on the second layer by aligning the second main pattern to the second alignment marks.

Description: The present invention generally relates to pattern forming methods in which a plurality of patterns are successively overlapped and exposed on a substrate, and more particularly to a pattern forming method which uses a multi-level alignment and is suited for application to a semiconductor device production which requires a high accuracy. Recently, the scale of semiconductor integrated circuits is rapidly increasing and there is a strong demand to improve the integration density of the semiconductor integrated circuits. In order to meet this demand, there is active research and development in the photolithography technique. An accurate alignment technique is also an important technique which determines the integration density in addition to the technique which improves of the resolution with which fine patterns are formed. According to the conventional technique, a lower layer which is the subject of the alignment is formed on a substrate and a photoresist layer is formed on this lower layer. Thereafter, a main pattern and an alignment mark pattern are simultaneously exposed so as to form on the lower layer the main pattern and a set of alignment marks which have a fixed positional relationship to the main pattern. Then, an upper layer which is to be aligned and a photoresist layer are formed on the lower layer. The positions of the alignment marks on the lower layer are measured, and a mask for the upper layer is exposed after moving the substrate so that the positions of the alignment marks match predetermined fixed positions relative to the mask. When forming a multi-level pattern, the above described procedure is repeated to successively make the alignment. A description will be given of an accuracy of an example of the conventional alignment technique by referring to FIG.1. For the sake of convenience, the description will be given for the accuracy of a one-dimensional alignment, however, a similar phenomenon of course occurs in the case of a two-dimensional alignment. A layer which is the subject of a process and a photoresist layer are combined and referred to as a first layer, and an nth layer will be denoted by Ln. Three layers L1 through L3 are successively exposed in this example. Of course, the exposure is not limited to the exposure by a light and the exposure may be made by an electron beam and the like. First, the first layer L1 is formed and a pattern PI and an alignment mark MI are formed on the first layer L1. A coordinate of a reference point on the first layer L1 is denoted by X1. Next, the second layer L2 is formed, a mask for the second layer L2 is aligned to the alignment mark MI of the first layer L1 and this mask is exposed. A reference point on the second layer L2 is denoted by X2. When a normal alignment technique is used in this state, the reference point X2 of the second layer L2 has an average value which is by approximation equal to the reference point X1 of the first layer L1 and is a random variable in conformance with a normal distribution of a variance d 2 / 2. Next, the third layer L3 is formed, a mask for the third layer L3 is aligned to the alignment mark MII of the second layer L2 and this mask is exposed. A reference point on the third layer L3 is denoted by X3. The reference point X3 of the third layer L3 has an average value which is by approximation equal to the reference point X2 of the second layer L2 and is a random variable in conformance with a normal distribution of a variance d 2 / 3. A variance of the positional error X1-X2 between the layers L1 and L2 is d 2 / 2, and a variance of the positional error X2-X3 between the layers L2 and L3 is d 2 / 3. A variance of the positional error between the layers L1 and L3 becomes d 2 / 2+d 2 / 3. This variance d 2 / 2+d 2 / 3 of the positional error between the layers L1 and L3 deteriorates the alignment accuracy in the so-called indirect alignment. According to the conventional alignment technique, the indirect alignment accuracy deteriorates as the distance between the two layers increases on the alignment sequence. The positional error between the layers is a serious problem for the semiconductor device which has a complex structure. For this reason, the layout of the patterns of the semiconductor device must be made with a margin which takes into account the alignment error, but this measure taken against the alignment error prevents further improvement of the integration density of the semiconductor device. SUMMARY OF THE INVENTION Accordingly, it is a general object of the present invention to provide a novel and useful pattern forming method in which the problems described above are eliminated. Another and more specific object of the present invention is to provide a pattern forming method comprising the steps of forming a first layer which includes at least one first alignment mark on a substrate, forming a second layer which includes at least one first main pattern and two second alignment marks on the first layer by independently aligning the second alignment marks to the first alignment mark, calculating errors of measured positions of the second alignment marks from designed values, moving the substrate based on the calculated errors, and forming a third layer which includes at least one second main pattern on the second layer by aligning the second main pattern to the second alignment marks. According to the pattern forming method of the present invention, it is possible to improve the indirect alignment accuracy while balancing the direct and indirect alignment accuracies if needed. For this reason, it is possible to considerably improve the integration density of the semiconductor device. Other objects and further features of the present invention will be apparent from the following detailed description when read in conjunction with the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS FIG.1 is a diagram for explaining an example of the conventional alignment technique; FIGS.2A through 2D are diagrams for explaining an operating principle of a pattern forming method according to the present invention; FIGS.3A through 3F are diagrams for explaining a first embodiment of the pattern forming method according to the present invention; FIGS.4A through 4F are diagrams for explaining a second embodiment of the pattern forming method according to the present invention; and FIGS.5A through 5F are diagrams for explaining a third embodiment of the pattern forming method according to the present invention. DESCRIPTION OF THE PREFERRED EMBODIMENTS First, a description will be given of an operating principle of a pattern forming method according to the present invention, by referring to FIGS.2A through 2D which show typical cases. In the case shown in FIG.2A, a main pattern PI and an alignment mark MI are formed on a first layer L1 on a substrate SUB. When forming patterns on a second layer L2, a main pattern PII and a first alignment mark MII-1 of the second layer L2 are aligned to the alignment mark MI of the first layer L1 and exposed. In addition, a second alignment mark MII-2 which is located at a position independent of the first alignment mark MII-1 is aligned to the alignment mark MI of the first layer L1 and exposed at least once. Hence, a plurality of alignment marks MII-1 and MII-2 are formed on the second layer L2. Positions of the alignment marks MII-1 and MII-2 are measured and errors from respective designed values are calculated. The substrate SUB is moved based on the calculated errors so as to align a third layer L3 to the second layer L2. In FIG.2B, those parts which are essentially the same as those corresponding parts in FIG.2A are designated by the same reference numerals, and a description thereof will be omitted. In the case shown in FIG.2B, the main pattern PII and the first alignment mark MII-1 of the second layer L2 are aligned to the alignment mark MI of the first layer L1. Then, the second alignment mark MII-2 of the second layer L2 is aligned to the alignment mark MI of the first layer L1 and exposed at least once so that the second alignment mark MII-2 partially overlaps the first alignment mark MII-1. A reference position is obtained by measuring positions of both ends of the partially overlapping alignment marks MII-1 and MII-2, and an error of the reference position from a designed value is calculated. The substrate SUB is moved based on the calculated error so as to align the third layer L3 to the second layer L2. In the case shown in FIG.2C, the main patterns are formed on both sides of the respective alignment marks. Otherwise, FIG.2C is basically the same as FIG.2A. In the case shown in FIG.2D, the main patterns are formed on both sides of the respective alignment marks. Otherwise, FIG.2D is basically the same as FIG.2B. According to the present invention, the indirect alignment accuracy is improved in the following manner. For the sake of simplifying the description, a description will be given of the one-dimensional alignment accuracy of the three layers L1 through L3 in the case shown in FIG.2A. The present inventor considered the fact that the variance d² of the positional error can be decomposed into the following two causes, that is, d² = dmes² + dmov², where dmes² denotes a measurement error of the alignment mark position and dmov² denotes an error between a moving quantity which is calculated from the measured result and an actual moving quantity. First, the main pattern PI and the alignment mark MI are formed on the first layer L1. The alignment mark MI itself is the same as the alignment mark MII of the conventional case shown in FIG.1. A coordinate of a reference point on the first layer L1 is denoted by X1. The main pattern PII and the first alignment mark MI-1 of the second layer L2 are aligned to the alignment mark MI of the first layer L1 and exposed. A reference point X21 of the main pattern PII and the first alignment mark MII-1 has an average X1 and a variance d 2 / 2 = dmes 2 / 2 + dmov 2 / 2. In addition, the second alignment mark MII-2 of the second layer L2 is aligned to the alignment mark MI of the first layer and exposed. A reference point X22 of the second alignment mark MII-2 has an average X1 and a variance d 2 / 2. Because the alignment and exposure of the alignment marks MII-1 and MII-2 are carried out in two steps, X21 and X22 become substantially independent random variables. Next, the third layer L3 is aligned to the second layer L2. The reference coordinate which is obtained by measuring the position of the first alignment mark MII-1 of the second layer L2 has an average X21 and a variance dmes 2 / 3 when it is assumed that the true position of X21 is X21. Similarly, the reference coordinate which is obtained by measuring the position of the second alignment mark MII-2 of the second layer L2 has an average X22 and a variance dmes 2 / 3. When the measured positions are averaged the average becomes (X21+X22)/2 and the variance becomes dmes 2 / 3/2. When the third layer L3 is aligned based on the position information which is obtained in the above described manner, a reference point X3 on the third layer L3 has an average (X21+X22)/2 and a variance d₃′² = dmes 2 / 3/2+dmov 2 / 3. As a result, a variance of an error X21-X3 between the second and third layers L2 and L3 becomes d 2 / 2/2+d₃′² by considering the independence of X21 and X22 and the error of the average position. A variance of an error X1-X3 between the first and third layers L1 and L3 becomes d 2 / 2/2+d₃′² by considering the independence of X21 and X22. Accordingly, the indirect alignment accuracy is improved by d 2 / 2/2 compared to the conventional case. The factor 1/2 is the new effect obtained by the present invention. This factor improves the indirect alignment accuracy over the conventional method. In the above described case, the direct alignment accuracy is deteriorated by d 2 / 2/2 because the described case puts emphasis on the improvement of the indirect alignment accuracy. However, it is possible to balance the direct alignment and the indirect alignment by using a weigh average of the direct and indirect alignments. When a weight of the first alignment mark MII-1 is denoted by w (0 ≦ w ≦ 1) and a weight of the second alignment mark MII-2 is denoted by (1-w), the weighted average becomes wx21 + (1-w)X22. As a result, a variance of the error X21-X3 between the second and third layers L2 and L3 becomes 2(1-w)²d 2 / 2 + d₃′², and a variance of the error X1-X3 between the first and third layers L1 and L3 becomes [(1-w)² + w²]d 2 / 2 + d₃′². In this case, w = 1/2 is the simple average. It can be seen that the direct alignment accuracy improves and the indirect alignment accuracy deteriorates as w becomes large. Accordingly, it is possible to realize a maximum integration density by simultaneously optimizing the device layout and the weighting at the time of averaging. This large freedom of design was not obtainable in the conventional case. Two of alignment marks are used in the above described case. But when n alignment marks are used, the variance of the alignment error between the first and third layers L1 and L3 becomes d 2 / 2/n + d₃″² and the variance of the alignment error between the second and third layers L2 and L3 becomes (n-1)d 2 / 2/n + d₃″², where d₃″² = dmes 2 / 3/n + dmov 2 / 3. In this case, it is possible to balance the direct and indirect alignments by using the weighted average similarly to the above described case. As a result, the alignment accuracy as a whole is improved compared to the case where two alignment marks are used. It is also possible to form another main pattern in combination with alignment marks other than the two alignment marks as shown in FIGS.2C and 2D. At the present stage, the scale of the semiconductor device is increasing faster than the improvement of the integration density. For this reason, there is a demand to form the chip exceeding the limit of the field size of the exposure apparatus. According to one method, the chip is divided into a plurality of fields and exposed. But when this method is employed and the alignment is made for each field, the indirect alignment is required between the fields and there is a problem in that the alignment accuracy deteriorates as the number of layers increases. On the other hand, there is study on a method of independently forming a small region and a larger region of the chip on independent exposure apparatuses. For example, the small region is a memory cell array region having a minimum size which is small, and the large region is a peripheral circuit region having a minimum size which is large. But in this case, the problem of the indirect alignment also occurs similarly to the above described case. Such problems can be overcome by taking the following measures. That is, an alignment mark is formed in combination with a plurality of pairs of main patterns, and an average position of the alignment marks on one layer is used as a reference position for the next layer as shown in FIGS.2C and 2D. As a result, it is possible to improve the alignment accuracy between layers and between fields. On the other hand, when a positive resist is used in the case shown in FIG.2B, the first alignment mark MII-1 of the second layer L2 is aligned to the alignment mark MI of the first layer L1 and exposed. Furthermore, the second alignment mark MII-2 of the second layer L2 is aligned to the alignment mark MI of the first layer L1 and exposed. As shown in FIG.2B, the first and second alignment marks MII-1 and MII-2 partially overlap each other and only an overlap portion indicated by hatchings remains as a mark. When the center position of the mark which is formed at the overlap portion is measured, this measuring operation become equivalent to measuring (X21+X22)/2 in the first described case. For this reason, it is possible to improve the alignment accuracy similarly to the first described case in which the simple average is used. On the other hand, when a negative resist is used in the case shown in FIG.2B, the same effects can be obtained by measuring the center position of the mark which is formed at the overlap portion. It is also possible to obtain a weighted average by weighting both ends of the mark which is formed at the overlap portion of the first and second alignment marks MII-1 and MII-2. According to the pattern forming method of the present invention, it is only necessary to provide on each layer one pair of regions for forming the alignment marks. Of course, the deviation in the width of the alignment mark which is exposed must be sufficiently small compared to the required alignment accuracy. Next, a description will be given of a first embodiment of the pattern forming method according to the present invention, by referring to FIGS.3A through 3F. Although three or more masks are actually used, it will be assumed for the sake of convenience that the pattern is formed by successively using three masks for one object. The alignment may be made on the same layer or between different layers of a stacked structure of the object. FIG.3A shows a pattern which is formed on a first layer which is formed on a substrate. The pattern includes a main pattern 1 and an alignment mark 2. Only one main pattern 1 and one alignment mark 2 are shown in FIG.3A, but it is of course possible to provide a plurality of main patterns 1 and a plurality of alignment marks 2 or a plurality of combinations of the main pattern 1 and the alignment mark 2. It is also possible to omit the main pattern 1. A second layer is formed on the first layer shown in FIG.3A, and a positive photoresist layer is formed on the second layer. FIG.3B shows a first mask 3 for the second layer. This first mask 3 includes a main pattern 4, a first alignment mark 5, and a mask 6 for covering a region for forming a second alignment mark 8 which will be described later. The first mask 3 is aligned to the alignment mark 2 on the substrate and the photoresist layer is exposed. FIG.3C shows a second mask 7. This second mask 7 includes the second alignment mark 8. The second mask 7 is aligned to the alignment mark 2 on the substrate and the photoresist layer is exposed. Then, a developing process is carried out to form a photoresist mask and a process is carried out on the second layer. A pattern shown in FIG.3D is obtained as a result of the process carried out on the second layer. A main pattern 9 and alignment marks 11 and 12 of the second layer are formed as shown in FIG.3D. FIG.3D shows a case where the alignment mark 2 of the first layer remains on the substrate. Thereafter, a third layer is formed on the substrate and a photoresist layer is formed on the third layer. FIG.3E shows a third mask 13 for the third layer. This third mask 13 includes a main pattern 14. The third mask 13 is aligned and set on an exposure apparatus (not shown), and positions of the alignment marks 11 and 12 on the substrate are measured. Errors of the present measured positions from respective designed values are obtained, and a moving quantity is obtained by calculating a simple average or a weighted average of the errors. The substrate is moved this moving quantity and the alignment is completed. Then the pattern of the third mask 13 for the third layer is exposed and developed, and a process is carried out on the third layer to form the pattern of the third layer. A pattern shown in FIG.3F is obtained as a result of the process carried out on the third layer. A main pattern 15 is formed on the third layer as shown in FIG.3F. FIG.3F also shows the alignment mark 2 of the first layer and the alignment marks 11 and 12 of the second layer. Next, a description will be given of a second embodiment of the pattern forming method according to the present invention, by referring to FIGS.4A through 4F. FIG.4A shows a pattern of a first layer which is formed on a substrate. The pattern includes a main pattern 21 and an alignment mark 22. The main pattern 21 may be omitted. Only one main pattern 21 and one alignment mark 22 are shown in FIG.4A, but it is of course possible to provide a plurality of main patterns 21 and a plurality of alignment marks 22 or a plurality of combinations of the main pattern 21 and the alignment mark 22. A second layer is formed on the first layer shown in FIG.4A, and a photoresist layer is formed on the second layer. For example, a memory region and a peripheral circuit region of one chip are divided and exposed independently for the second and subsequent layers. FIGS.4B and 4C respectively show first and second masks 23 and 23a of the second layer. FIG.4B shows the first mask 23 including a first main pattern 24, a first alignment mark 25, a mask 26 of a second main pattern region, and a mask 27 of a second alignment mark region. FIG.4C shows the second mask 23a including a second main pattern 29, a second alignment mark 30, and a mask 31 of the first main pattern. The first mask 23 is aligned to the alignment mark 22 on the substrate and exposed. In addition, the second mask 23a is aligned to the alignment mark 22 on the substrate and exposed. Thereafter, the exposed pattern on the substrate is developed. FIG.4D shows the pattern of the second layer which is obtained by developing the exposed pattern on the substrate. A first main pattern 32 and a second main pattern 33 are formed in FIG.4D. The second main pattern 33 is formed in a periphery of the first main pattern 32. In addition, alignment marks 34 and 35 of the second layers are formed. FIG.4D also shows the alignment mark 22 of the first layer. Then, a third layer is formed and a photoresist layer is formed on the third layer. FIGS.4E and 4F respectively show first and second masks 38 and 39 for the third layer. The first mask 38 includes a first main pattern 41 and a mask 42 for a second main pattern 43. The second mask 39 includes the second main pattern 43 and a mask 44 for the first main pattern 41. First, the first mask 38 is aligned and set on the exposure apparatus (not shown). Then, positions of the alignment marks 34 and 35 on the substrate are measured. Errors of the present measured positions from respective designed values are obtained, and a moving quantity is obtained by calculating a simple average or a weighted average of the errors. The substrate is moved this moving quantity and the first mask 38 is exposed. Next, the second mask 39 is similarly aligned and exposed. After exposing the first and second masks 38 and 39, a developing process is carried out to form the pattern of the third layer. Next, a description will be given of a third embodiment of the pattern forming method according to the present invention, by referring to FIGS.5A through 5F. FIG.5A shows a pattern of a first layer which is formed on a substrate. This pattern includes a main pattern 51 and an alignment mark 52. A second layer is formed on the first layer, and a photoresist layer is formed on the second layer. FIG.5B shows a first mask 53 of the second layer. This first mask 53 includes a main pattern 54 and a first alignment mark 55. The first mask 53 is set and aligned to the alignment mark 52 on the substrate, and a pattern of the second layer is exposed. FIG.5C shows a second mask 56 of the second layer. This second mask 56 includes a second alignment mark 57. The second mask 56 is set and aligned to the alignment mark 52 on the substrate, and a pattern of the second layer is exposed. Next, a developing process is carried out on the pattern of the second layer. A pattern shown in FIG.5D is obtained as a result of the developing process which is carried out on the pattern of the second layer. A main pattern 58 and an alignment mark 59 of the second layer are formed as shown in FIG.5D. The alignment mark 59 is obtained by overlapping the first alignment mark 55 of the first mask 53 and the second alignment mark 57 of the second mask 56. A length between the two ends of the alignment mark 59 varies depending on the alignment error. In other words, the two ends of the alignment mark 59 are equivalent to two independent alignment marks. In FIG.5D, the shape of the alignment mark 52 on the first layer is shown to remain. A third layer is formed on the second layer, and a photoresist layer is formed on the third layer. FIG.5E shows a mask 60 for the third layer. This mask 60 includes a main pattern 61. The mask 60 is set and aligned on the exposure apparatus (not shown). Then, a center position of the alignment mark 59 on the substrate or a center position of weighting is measured. An error of the present measured center position from the designed value is obtained to calculate a moving quantity. The substrate is moved this moving quantity and the alignment is completed. Thereafter, an exposure process and a developing process are carried out to form a pattern of the third layer shown in FIG.5F. The pattern includes a main pattern 62. FIG.5F also shows the alignment mark 59 of the second layer and the alignment mark 52 of the first layer. In the described embodiments, one set of alignment marks is provided for the first layer. However, it is possible to provide a plurality of sets of alignment marks for the first layer. In this case, it is possible to reduce the alignment error by aligning the second layer to an average position which is obtained from the plurality of sets of alignment marks. Although no alignment marks are shown for the third layer in the described embodiments, alignment marks are of course provided for the third layer when the fourth and subsequent layers require alignment. For example, two kinds of alignment marks may be provided so that the alignment accuracy can be improved by independently carrying out the exposure. In addition, although not shown specifically, the alignment mark is generally a combination of various patterns. In other words, the alignment marks in the drawings described above represent such a combination of various patterns. The embodiments are described for the case where the positive photoresist is used. However, a negative photoresist can be used instead by appropriately modifying the masks. In the described embodiments, two kinds of masks are used to form two sets of alignment marks. However, all of the patterns required to carry out the present invention may be formed on a single mask and select each pattern on the exposure apparatus so that only the required pattern is exposed each time. It is also possible to use a mask with an opening for selecting the required pattern on the single mask which has all of the patterns. Further, the present invention is not limited to these embodiments, but various variations and modifications may be made without departing from the scope of the claims.

Claims: A pattern forming method comprising the steps of forming a first layer (L1) which includes at least one first alignment mark (MI) on a substrate (SUB), characterized in that there are provided the steps of: forming a second layer (L2) which includes at least one first main pattern (PII) and two second alignment marks (MII-1, MII-2) on said first layer (L1) by independently aligning said second alignment marks to said first alignment mark (MI); calculating errors of measured positions of said second alignment marks from designed values; moving said substrate (SUB) based on the calculated errors; and forming a third layer (L3) which includes at least one second main pattern (PIII) on said second layer by aligning said second main pattern to said second alignment marks. The pattern forming method as claimed in claim 1, characterized in that said step of forming said second layer (L2) includes a first substep for aligning said first main pattern (PII) and one (MII-1) of said second alignment marks to said first alignment mark (MI) and exposing said first main pattern and said one second alignment mark, a second substep for aligning another one (MII-2) of said second alignment marks to said first alignment mark and exposing said other second alignment mark, and a third substep for developing said first main pattern and said second alignment marks. The pattern forming method as claimed in claim 2, characterized in that said second substep exposes said first main pattern (PII) simultaneously as said other second alignment mark (MII-2). The pattern forming method as claimed in any of claims 1 to 3, characterized in that said step of moving said substrate (SUB) moves said substrate based on a simple average of the calculated errors. The pattern forming method as claimed in any of claims 1 to 3, characterized in that said step of moving said substrate (SUB) moves said substrate based on a weighted average of the calculated errors. The pattern forming method as claimed in any of claims 1 to 5, characterized in that said step of forming said second layer (L2) forms said second layer which includes at least two first main patterns (PII). The pattern forming method as claimed in claim 6, characterized in that said two first main patterns (PII) are exposed independently. The pattern forming method as claimed in any of claims 1 to 7, characterized in that said step of forming said first layer (L1) forms said first layer which includes at least one main pattern (PI). The pattern forming method as claimed in claim 1, characterized in that said step of forming said second layer (L2) exposes said two second alignment marks (MII-1, MII2) to partially overlap each other within an overlap portion. The pattern forming method as claimed in claim 9, characterized in that said step of calculating the errors measures positions of two opposite ends of said overlap portion and calculates the errors of the measured positions of said second alignment marks (MII-1, MII-2) from the designed values. The pattern forming method as claimed in claim 10, characterized in that said step of calculating the errors calculates a reference position from the measured positions and calculates the errors based on the reference position. The pattern forming method as claimed in any of claims 9 to 11, characterized in that said step of forming said second layer (L2) forms said second layer which includes at least two first main patterns (PII). The pattern forming method as claimed in claim 12, characterized in that said two first main patterns (PII) are exposed independently. The pattern forming method as claimed in any of claims 1 to 13, characterized in that a variance of an alignment error between said second and third layers (L2, L3) is d 2 / 2/2 + d₃′² and a variance of an alignment error between said first and third layers (L1, L3) is d 2 / 2/2 + d₃′² where d 2 / 2 denotes a variance of a reference point of one of said two second alignment marks (MII-1, MII-2) and d₃′² denotes a variance of a reference point of said third layer (L3). The pattern forming method as claimed in claim 1, characterized in that said step of forming the second layer (L2) forms said second layer which includes n second alignment marks (MII-1, MII-2, ..., MII-n). The pattern forming method as claimed in claim 15, characterized in that a variance of an alignment error between said second and third layers (L2, L3) is (n-1)d 2 / 2/n + d₃″² and a variance of an alignment error between said first and third layers (L1, L3) is d 2 / 2/n + d₃″², 2 where d 2 / 2 denotes a variance of a reference point of one of said n second alignment marks (MII-1, MII-2, ..., MII-n) and d₃″² denotes a variance of a reference point of said third layer (L3).

Inventors: HASHIMOTO KOICHI, HASHIMOTO, KOICHI
Applicants: FUJITSU LTD, FUJITSU LIMITED
Application year: 1990
Main classification: G03F9
IPC codes: H01L21, G03F9