Process and structure wherein atoms are repositioned on a surface using a scanning tunnelling microscope

Abstract: A method and structure in which an adsorbate atom or molecule (43) is repositioned on a substrate surface (40) by moving the tip (42) of an STM to a position adjacent to the atom to be moved and causing the atom to be attracted to the tip. While the atom remains bound to the surface (or, alternatively, is lifted), the tip is moved laterally to drag (or carry) the atom to a desired position at which it is bound to the surface. The atom may be repositioned in close proximity to an atom of the same or another type on the same or a different substrate to create a desired multi-atom structure or synthesise a molecule, or an atom may be removed to cleave a multi-atom structure, or a change in state of a multi-atom structure may be effected. Atoms may also be repositioned to write indicia on a storage medium by dragging or carrying atoms into the desired information-bearing pattern, for example, by dragging or carrying selected atoms out of a respective one of a plurality of parallel atom rows using the tip of an STM to thereby write indicia at locations denoted by the removed atoms.

Description: This invention relates to methods and structures involving repositioning of atoms or molecules adsorbed on a substrate and, more particularly, to a method using a scanning tunnelling microscope (STM) for repositioning an atom or molecule on a substrate (such as for fabricating or disassembling a multi-atom structure, synthesising or cleaving a multi-atom structure, or recording indicia on a storage medium) and the products made by said method. U.S. Patent 4,575,822 describes a data storage medium on which, using an STM with a probe tip, indicia are written by forming perturbations on the surface of a substrate. The indicia are then read by scanning over the indicia with the tip of the STM. U.S. Patent 4,826,732 and European Patent Publication 174 860 A3 describe several embodiments of a recording medium. One comprises a substrate having a surface coated with a monolayer of atoms and from which atoms are selectively removed by modulating the input signal to an STM tip to write indicia. Another embodiment comprises a substrate having a surface onto which atoms are selectively deposited to write indicia. In both embodiments, the STM is used to read back information by imaging the surface. An article by Becker et al. entitled "Atomic-scale Surface Modifications Using a Tunnelling Microscope", published in the January 29, 1987, issue of Nature, pp. 419-421, describes writing an atomic-scale "bit" by raising the STM tip to substrate bias from -1.0 V to -4.0 V at a quiescent tunnel current of 20 pA while the tip is maintained laterally stationary over the site chosen for modification, then rapidly withdrawing the tip. However, this article does not teach repositioning an atom. An article by Fostel et al. entitled " Molecular manipulation using a tunneling microscope", published in the January 28,1988, issue of Nature, pp. 324 - 326 , describes the pinning of individual organic molecules to graphite using an STM. The reverse manipulation, the removal of pinned molecules is also described, as in partial erasure suggesting that organic molecules can be cleaned by tunnelling electrons. No prior art discloses or suggests the repositioning of an atom or molecule from one position on the surface of a substrate to another position on said surface, or the repositioning of atoms or molecules of the same or different type on the same surface to fabricate a desired multi-atom structure, such as an electrical component, or to synthesise or cleave a multi-atom structure, such as a biological molecule (e.g., a protein or a nucleic acid), or a long-chain polymer. According to the present invention there is provided a method for repositioning an adsorbate atom or molecule) on a substrate surface comprising the steps set out in claim 1. The tip may then be moved away from the substrate, reducing the attraction between the atom and tip, and leaving the atom bound at the desired position. The atom may be repositioned in close proximity to an atom of the same or another type on the substrate to create a desired multi-atom structure or synthesise or cleave a multi-atom structure. Atoms may also be repositioned to write indicia on a storage medium by dragging atoms into the desired information bearing pattern, for example, by dragging selected atoms out of a respective one of a plurality of parallel atom rows using the tip of an STM to thereby write indicia at locations denoted by the removed atoms. Atoms may also be repositioned by lowering the STM tip over the atom to be moved and changing the voltage/current until the atom becomes transferred to the tip; whereupon the voltage/current may be reduced or zeroed or, if preferred, maintained. The tip is retracted, moved laterally, and then lowered to reposition the atom on the same or another substrate; whereupon the voltage/current is changed to leave the atom substrate bound when the tip is retracted. During the step of moving an atom the tip is suitably moved to a position adjacent to the atom to be moved and the tunnel current is concurrently increased to create an attraction between the tip and atom. Once the atom is in the desired position the tip may be moved away from the substrate so as to reduce the attraction between the atom and tip and leave the atom bound at said desired position. Reducing the tunnel current terminates the attraction between the atom and tip enabling the atom to be left bound at said desired position. Suitably the method includes the step of providing at least one other atom bound to the surface and to which the first-mentioned atom is attached when in said desired position. More suitably the first-mentioned atom is of a different type from at least one of said other atoms. The method of repositioning atoms may be used for fabricating a desired multi-atom structure on a substrate, the method comprising the steps of providing at least one atom of one type; and using an STM, repositioning each such atom in sufficiently close proximity to an atom of another type on the substrate to create the structure. Suitably the atoms of both types are on the substrate, and the repositioning is effected by moving each atom of said one type into proximity with at least one of the other type. Preferably the atoms of both types are on the substrate, and the repositioning step includes the steps of using said tip, imaging each atom of said one type individually to target such atom; activating the tip to attract the targeted atom toward it while the atom remains bound to the substrate; moving the tip laterally for dragging the targeted atom in a preselected path on said substrate into proximity with the atom of the other type; and deactivating the tip to free the targeted atom so the atoms of the respective types will remain bonded to the substrate in their respective proximate positions. The method of repositioning atoms for fabricating a desired multi-atom structure on a substrate may also include, during the repositioning step, the steps of moving the tip of the STM to a position above an atom of said one type while applying a bias voltage/current thereto to image and target the atom as being of said type; lowering the tip into proximity with, but at one side of, the targeted atom; increasing the bias voltage/current in a direction sufficient to cause the targeted atom to be drawn into a high-field region between the tip and substrate; moving the tip along the substrate and concurrently dragging the targeted atom in a preselected path with the tip to a desired position in proximity with the atom of said other type while the latter atom remains bound to the substrate; and reducing the bias voltage/current to cause the targeted atom to remain bound at said desired position. The method ib.-.particularly suitable when the structure is an electrical component comprising at least one donor element and at least one acceptor element. A further aspect of the present invention provides a method of repositioning a plurality of adsorbate atoms on a substrate surface to write indicia on a storage medium, the method comprising the steps of providing a plurality of parallel rows of said atoms spaced apart on the medium; moving the tip of an STM to a position adjacent to the atom to be moved and concurrently increasing the tunnel current/voltage to create an attraction between the tip and atom; while the atom remains bound to the surface, moving the tip transversely of the rows to drag a selected atom from its respective row into the adjacent vacant space; and repeating the moving steps to remove atoms at selected locations along the respective rows to thereby write indicia as denoted by the removed atoms. The present invention also provides a storage medium upon which indicia have been written by the above method. In yet a further aspect of the present invention there is provided a method of repositioning atoms to synthesise a molecule, comprising the steps of providing at least one adsorbent atom of one type; and using an STM, repositioning each such atom in physical contact with an atom of the same or a different type to create the synthesised molecule. Preferably the method of repositioning an atom using an STM having a tip, comprises the steps of: providing a substrate to which the atom is bound; targeting the atom on the substrate with the tip; placing the tip in such close proximity to the atom that the atom becomes bound to the tip and remains bound to the tip when the tip is withdrawn from the substrate; withdrawing the tip from the substrate; moving the tip generally laterally to a desired position above said or another substrate; lowering the tip at said position until the atom becomes preferentially bound to the selected substrate at the desired location; and withdrawing the tip from the substrate-bound atom, leaving the atom at the desired location on the surface of the selected substrate. Alternatively the method of repositioning an atom using an STM having a tip, comprises the steps of: providing a substrate to which the atom is bound; targeting the atom on the substrate with the tip; moving the tip to a position proximate to the atom; changing the bias voltage/current sufficient to cause the atom to become attached to the tip; while maintaining the changed bias voltage/current: raising the tip from the substrate, moving the tip generally laterally to a desired position above said substrate, and lowering the tip at said position into proximity with the substrate; and altering the bias voltage/current at said desired position to cause said atom to be repositioned on said substrate at said position. A method of fabricating a desired multi-atom structure on a substrate suitably comprises the steps of: providing a plurality of atoms; and using an STM, repositioning said atoms on the substrate to create the structure. The present invention also provides a multi-atom structure fabricated by the method described above. A method of synthesising a molecule suitably comprises the steps of: providing one atom; and using an STM, repositioning said one atom proximate to one or more other atoms to create the synthesised molecule. A method for repositioning adsorbate atoms on a substrate surface suitably comprises the steps of: while the tip of an STM is positioned proximate a selectable group of atoms to be moved, applying a voltage between the tip and substrate to increase the attraction between the tip and one or more atoms of said group; and while the group of atoms remains bound to the surface, moving the tip laterally to drag said group of atoms to a desired position on the surface. A method for repositioning atoms on a substrate surface suitably comprises the steps of: while the tip of an STM is positioned within an effective distance from a selectable group of atoms to be moved, applying a voltage pulse between the tip and atom group for attracting said group of atoms to the tip; moving the tip laterally to shift the group of atoms concurrently to a desired position with respect to the surface;. and while the tip is within said distance, applying a voltage pulse between the tip and substrate for causing said group of atoms to become repositioned on said surface. Preferably the selectable group of atoms to be moved is a three-dimensional cluster of atoms that is transferred to the surface. In a further aspect of the present invention there is provided a method for repositioning an adsorbate atom on a substrate surface, comprising the steps of: while the tip of an STM is positioned proximate the atom to be moved, applying a voltage pulse between the tip and substrate to change the state of the atom; and while the atom in its changed state remains bound to the surface, moving the tip laterally to drag said atom to a desired position on the surface. Preferably during the moving step, the atom in its changed state is associated with at least one other atom to create a desired structure. More preferably the method includes the step of: applying a voltage pulse between the tip and substrate to again change the state of said atom. The method may also include the step of: providing at least one other atom of the same or a different type bound to the surface and to which the first-mentioned atom is attached when in said desired position. In yet a further aspect of the present invention there is provided a method of changing the state of a molecule, comprising the steps of providing on a substrate an adsorbate molecule capable of assuming a plurality of different states; and while the molecule is in one of said states and the tip of an STM is positioned within a predetermined effective distance from said molecule, applying a voltage pulse between said tip and substrate to alter the attraction between the tip and at least one atom of the molecule for changing the state of the molecule from its said one state to another of its said plurality of states. Preferably the method of changing the state of a molecule includes the step of, while the tip is positioned within said effective distance from said molecule, applying a voltage pulse between said tip and substrate to again change the state of the molecule. A further embodiment of the present invention provides a method of fabricating a desired multi-atom structure on a substrate, comprising the steps of providing a plurality of atoms in disparate locations; and using an STM, repositioning at least some of said atoms in sufficiently close proximity to each other on the substrate to create the structure. Suitably during the repositioning step, at least some of said atoms are positioned over others of said atoms to form a multi-layered three-dimensional structure. The present invention also provides a multi-layered structure made by the method described above. The method of fabricating a desired multi-atom structure on a substrate preferably wherein the repositioning step includes the steps of: while the tip is within an effective distance from a selected atom to be repositioned, applying a voltage/current pulse between the tip and selected atom to transfer the latter to the tip; moving the tip laterally for moving the selected atom to a desired position; and while the tip is within said effective distance of said substrate, applying a voltage/current pulse between the tip and substrate to transfer the selected atom to the substrate in a desired spatial relationship with respect to another of said plurality of atoms. In a further embodiment of the present invention there is provided a method of writing indicia on a storage medium, comprising the steps of: moving the tip of an STM to a position adjacent to an atom to be moved and concurrently increasing the attraction between the tip and atom; while the atom remains bound to the surface of the storage medium, moving the tip to drag said atom to another position on the surface; and repeating the moving steps to move atoms from selected locations to thereby write indicia as denoted by the repositioned atoms. In yet a further embodiment of the present invention there is provided a method of modifying a multi-atom structure, comprising the step of, using an STM, removing one or more atoms from the multi-atom structure. Alternatively the method of modifying a multi-atom structure comprises the step of, using an STM. repositioning at least one atom of the structure. A further aspect of the present invention also provides a multi-atom structure made by the methods described above. Preferably a multi-atom, three-dimensional structure comprises a substrate having a surface with an area that has a three-dimensional atomic pattern formed by atoms selectively repositioned on the surface; more preferably wherein the atoms are selectively positioned and repositioned by an STM. In one embodiment the invention provides a multilayered, three-dimensional structure comprising a substrate to which is added a number of atoms sufficient to create the structure. A further aspect of the present invention provides a method of modifying a molecule, comprising the steps of: (a) positioning the tip of an STM within an effective distance from a surface that supports an atom that is to be repositioned to modify the molecule; (b) transferring the atom to the tip while the tip is so positioned; (c) repositioning the tip proximate to the molecule; (d) transferring the atom from the tip to the molecule; and (e) repeating steps (a), (b), (c), and (d) for transferring atoms selectively as necessary to complete modification of the molecule. A further aspect of the present invention further provides a method of writing indicia on a storage medium comprising a plurality of atoms on a substrate, comprising the step of, using an STM, repositioning selectable atoms on the substrate. In yet a further embodiment of the present invention there is provided a method of repositioning an atom using an STM having a tip, comprising the steps of: providing a substrate to which the atom is bound; targeting the atom on the substrate with the tip; with the tip in close proximity to the atom, applying a voltage/current pulse to cause the atom to become bound to the tip and remain bound to the tip when the tip is withdrawn from the substrate; withdrawing the tip from the substrate; moving the tip generally laterally to a desired position above said or another substrate; lowering the tip at said position; and with the tip in close proximity to the selected substrate at the desired location, applying a voltage/current pulse to cause the atom to be transferred to the selected substrate at the desired location and remain bound thereto upon withdrawal of the tip. A further aspect of the present invention also provides a multi-atom structure comprising a substrate having a surface with an area that has a predetermined atomic pattern formed by atoms selectively repositioned on the surface. Preferably the atoms are selectively positioned and repositioned by an STM. The following drawings serve to illustrate the present invention: Fig. 1 is a schematic view showing a preferred technique for repositioning an atom on a surface. Fig. 2 is a fragmentary view of a recording medium on which data is written using one preferred technique. Fig. 3 is a schematic view of an alternative technique for repositioning an atom from one substrate to a different substrate. Fig. 4 is a schematic view illustrating another preferred technique for repositioning an atom. Fig. 5 is a plot of voltage v. time for the technique illustrated in Fig. 4. Fig. 6 is a side elevational view of a multi-atom, three-dimensional structure fabricated by any of the methods embodying the invention. For simplification of description, the term "atom" as herein used in the specification and claims is intended to define either an atom or a molecule, unless otherwise indicated. Also, since operation of an STM was initially described in U.S. Patent 4,343,993 and is now well known in the art, its operation will be but briefly described herein. I One preferred method for repositioning "atoms" is illustrated in Fig. 1. A probe tip 10 of a scanning tunnelling microscope (STM) is disposed above an adsorbate atom 11 that is bound to the surface 12 of an adsorbent substrate 13. A bias voltage and current of sufficiently low magnitude to prevent unintended movement of atom 11 is applied to tip 10 to initially locate and target the atom on surface 12 by using the STM in conventional imaging mode. Tip 10 is then moved from point A toward atom 11 (e.g., by increasing the tunnel current), until the tip is capable of exerting enough lateral force on the atom to cause the atom to remain located beneath the tip but bound to the substrate when the tip is subsequently moved laterally across the surface. Tip 10 is then moved laterally to point C (using a conventional STM feedback circuit, not shown, to maintain constant tunnelling current), dragging the atom with it along a preselected path to the desired new position. Throughout this lateral movement, the atom remains bound to the surface. At the new position, the tip is withdrawn to position D, leaving the atom bound at the new position. For proper operation, it is necessary to provide a combination of adsorbate atom and substrate surface which will assure that the energy barrier to move from position to position on the surface is smaller than the energy gained by having the atom remain in the region between the tip and substrate. The sign and magnitude of the electric field between the tip and the substrate may be used to change the attractive interaction between the atom and the tip to facilitate the process of dragging an atom across the surface. In actual test, a Xe atom was dragged from one position to another on the surface of a Pt (111) substrate in the following manner with the atom and substrate disposed in an evacuated container and at a temperature of 4°K. (1) The Xe atom was targeted and its x,y coordinates determined by imaging the surface using a tunnel current of 1 x 10-11 amp. and a negative .020 voltage between the tip and substrate. (2) The tip was then lowered toward the targeted Xe atom by increasing the demanded tunnelling current to 2 x 10-10 amp. (3) The tip was then moved sequentially in x and then y directions to a new position whose x,y coordinates were preselected, dragging the Xe atom, which remained bound to the Pt surface, en route. This was done with the STM operating in constant current mode at 2 x 10-10 amp. (4) The tunnel current was then reduced to 1 x 10-11 amp. (the imaging current) causing the tip to be retracted from the substrate. This effectively terminated the attraction between the Xe atom and the tip, leaving the atom bound to the surface at its new location when the tip was subsequently moved laterally. While the described experiment was performed considerably below room temperature, the ability to successfully reposition an atom on a surface using this process is not fundamentally dependent upon temperature. In other words, the lateral (i.e., in-plane), attractive interaction between the atom and the tip must be sufficiently strong to overcome the energy barrier for an atom to move from site to site along the surface, and the attraction the atom has to the tip must not be so great as to cause the atom to become bound to the tip instead of remaining bound to the surface. Since the energy barrier for moving an atom from site to site across the surface is generally smaller than the atom's adsorption energy, this process will work for a wide range of adsorbate atoms/molecules adsorbed on a wide range of substrates. This method may also be used to drag an atom up or down steps or over a substrate having an uneven surface by constraining the tip to follow changes in vertical contour. II The method may also be used to write indicia on a storage medium. As illustrated in Fig. 2, a storage medium 20 in the form of a substrate with an adsorbent surface is provided with a plurality of parallel rows 21 of atoms 22 of similar type, and the rows are spaced apart substantially one atom width. To write indicia, a selectable atom 22a in a selected row is imaged and targeted as above described, and then dragged out of the row into the vacant space between rows while bound to the surface, then released by the tip. After a sequence of these writing steps, the indicia may be read by scanning either each row (or the spaces between rows) sequentially with the tip. If a substrate with atoms row arranged is not available, atoms from a supply area of the substrate may be individually dragged and repositioned into rows using the method above described. Or, if preferred, the atoms may be expelled and deposited in a series of parallel rows by an adaptation of the technique described in connection with Figs. 5 or 6 of the above-cited patent to Kazan. III Fig. 3 illustrates a method for repositioning a selected atom 30 from surface 31 of one substrate 32 to a surface 33 of another, or the same, substrate 34. STM tip 35 images and targets atom 30 at position J. The tip is then brought to position K such that atom 30 becomes bound to the tip. The tip, with atom attached, is retracted from substrate 32 to position L, then translated to position M above the preselected site at which the atom is to be deposited on surface 33 of substrate 34. The tip 35 is then lowered to position N, at which point atom 30 becomes bound to surface 33. The tip is then withdrawn to position O, leaving the atom bound to the surface 33. It will be understood that the applied bias voltage between the tip and substrate and the tunnelling current may be adjusted so as to facilitate the transfer of the atom to the tip when the tip is at point K, and may also be adjusted to facilitate the transfer of the atom from the tip to the surface 33 when the tip is at point N. IV In actual test and as depicted in Figs. 4 and 5, surface 40 of a Pt(111) substrate 41 was imaged with the tip 42 of an STM at a, voltage 45 (Fig. 5) to locate the Xe atom 43 which was to be moved. Tip 42 was then lowered from its imaging position R to position S which is within a predetermined distance d from adsorbed atom 43. Then a voltage pulse 44 of appropriate magnitude, polarity, and duration was applied between the tip and substrate. In this test, tip 42 was biased positive 1 volt relative to substrate 41 for 10 milliseconds and caused atom 43 to be transferred from the substrate to the tip as shown at T. Following the transfer, the voltage was reduced to between 10 and 50 millivolts, the voltage 45 (Fig. 5) used to image the surface 40. Tip 42 carrying the Xe atom 43 at or near its apex was then raised from position T to position U, and thereafter moved laterally to position v at a new location. Atom 43 was transferred back to surface 40 by moving tip 42 to position W within a distance e from the surface, which may or may not be the same as distance d. A voltage pulse 46 of appropriate magnitude and duration, but a polarity (see Fig. 5) opposite that used to transfer the Xe atom 43 to the tip 42 (-1 volt for 10 milliseconds), was then applied between the tip and substrate 41 and caused the Xe atom to transfer from the tip to the surface as shown at X; whereupon tip 42 was withdrawn to position Y. It will be understood that the atom 43 may be transferred to a different location on the same substrate 41, as above described, or to a location on a different substrate. Also, tip 42 may be used to image the surface 40 while moving to the new location on the same or a different substrate. Moreover, the voltage pulses may not necessarily be of opposing polarities; in some applications, the transfers from and to the STM tip may be effected by, for example, changes in pulse magnitude of the same polarity. Also, while tip 42 is preferably retracted to position U and moved therefrom to position V, it may, if preferred, be moved laterally from position T to position W if the substrate surface 40 is smooth enough. The mechanism by which atom 43 is transferred is not currently understood. Although a voltage pulse was applied to transfer the Xe atom, at this time it is not known whether the critical parameter which determines whether or not the atom moves is the voltage, the electric field, the current, or as yet some unanticipated cause. V The "dragging" method of Section I and "carrying" methods described in Sections III and IV may be used to reposition and attach an atom to one or more other atoms 15 (Fig. 1) of the same or different type at the desired new location. A molecular compound may be synthesised, for example, by repositioning a C atom to attach to one or more H atoms. The atom being moved should be positioned in sufficiently close proximity to another atom to create a desired structure, typically to within a distance comparable to an interatomic bond length. This process may be used to fabricate structures which, by virtue of their small size, exhibit novel behaviour or useful properties derived from the nonclassical or quantum mechanical behaviour of such small structures. The "carrying" method is readily adaptable to constructing on a surface three-dimensional objects (i.e., an assembly of atoms 50 of the same or different types that protrude more than one atomic layer beyond surface 51, such as shown in Fig. 6) because the atom to be added to the three-dimensional object under construction may simply be carried up to its new height by the STM tip in the same way a crane is employed to construct a tall building. The "dragging" process may also allow building in three dimensions; however, it will require that atoms be slid up and over other atoms on the surface. The methods in Sections I, III, and IV may also be used to cleave or disassemble a multi-atom structure by selectively removing atoms from the structure. Alternatively, these methods may be used to change the state of an atom or a multi-atom structure. This may be useful for changing the chemical reactivity of the atom or multi-atom structure, or to store information according to the particular state of the atom or multi-atom structure. For example, a diatomic molecule, such as oxygen, can adhere to a surface in one of three possible ways or states: (1) a molecular physisorbed state in which the two oxygen atoms are bound to each other but very weakly to a substrate surface; (2) a molecular chemisorbed state in which the oxygen atoms are still bound together but more strongly bonded to the surface; and (3) a dissociated chemisorbed state in which the oxygen molecule is broken into separate oxygen atoms, both of which are even more strongly bound to the surface. States (1) and (2) are stable at low temperatures (e.g., below 150°K) if left unperturbed. Finally, after the repositioning step, one or more of the repositioned atoms may be subjected to a catalyzing agent (such as light, voltage, current, etc.) for causing a chemical reaction that results in a desired multi-atom structure. It is to be noted that the prior art does not teach or suggest repositioning a selected atom by use of an STM, or the fabrication, or synthesis, of a multi-atom structure. While the invention has been particularly shown and described with reference to preferred embodiments thereof, it will be understood by those skilled in the art that various changes in form and details may be made therein within the scope of the claims.

Claims: A method for repositioning an adsorbate atom on a substrate surface, comprising the steps of: moving the tip of an STM to a position proximate the atom to be moved and then increasing the attraction between the tip and the atom by moving the tip closer to the atom, and while the atom remains bound to the surface, moving the tip laterally to drag the atom to a desired position on the surface. A method for repositioning atoms as claimed in claim 1 wherein during the moving step the tip is moved to a position adjacent to the atom to be moved and the tunnel current is concurrently increased to create an attraction between the tip and the atom. A method for repositioning atoms as claimed in claim 1, modified in that the tip is placed in such close proximity to the atom that the atom becomes bound to the tip and remains bound to the tip when the tip is withdrawn from the substrate; the tip is withdrawn from the substrate; the tip is moved generally laterally to a desired position above said or another substrate; the tip is lowered at said desired position until the atom becomes preferentially bound to the selected substrate at the desired location; and the tip is withdrawn from the substrate-bound atom, leaving the atom at the desired location on the surface of the selected substrate. A method for fabricating a desired multi-atom structure on a substrate surface comprising the steps of: providing at least one atom of one type, and using the method for repositioning atoms of claim 1, 2 or 3, repositioning each such atom in sufficiently close proximity to an atom of another type on the substrate to create the structure. A method for repositioning atoms to write indicia on a storage medium, comprising the steps of: providing a plurality of parallel rows of said atoms spaced apart on the medium, using the method for repositioning atoms of claim 1 or claim 2, moving the tip transversely of the rows to drag a selected atom from its respective row into the adjacent vacant space; and repeating the moving steps to remove atoms at selected locations along the respective rows to thereby write indicia as denoted by the removed atoms. A method of repositioning atoms to synthesise a molecule, comprising the steps of: providing at least one adsorbent atom of one type, and using the method for repositioning atoms of claims 1, 2 or 3, repositioning each such atom in physical contact with an atom of the same or a different type to create the synthesised molecule. A method of repositioning atoms to fabricate a desired multi-atom structure, comprising the steps of: providing a plurality of atoms; and using the method for repositioning atoms of claims 1, 2 or 3, repositioning said atoms to create the multi-atom structure. A method of synthesising a molecule, comprising the steps of: providing one atom; and using the method of claims 1, 2 or 3, repositioning said one atom proximate to one or more other atoms to create the synthesised molecule. A method for repositioning atoms as claimed in claim 1, modified in that while the tip of the STM is positioned within an effective distance from a selectable group of atoms to be moved, applying a voltage pulse between the tip and the atom group for attracting said group of atoms to the tip; moving the tip laterally to shift the group of atoms concurrently to a desired position with respect to the surface; and while the tip is within said distance, applying a voltage pulse between the tip and substrate for causing said group of atoms to become repositioned on said surface. A method of modifying a molecule or multi-atom structure, comprising the steps of: providing a molecule or multi-atom structure; and using the method of claims 1, 2 or 3, repositioning at least one atom of the molecule or multi-atom structure.

Inventors: EIGLER DONALD MARK, EIGLER, DONALD MARK
Applicants: IBM, INTERNATIONAL BUSINESS MACHINES CORPORATION
Application year: 1990
Main classification: G11B9
IPC codes: C23C26, H01J37, B82B3, H01L21, G11B9, H01L51, C07B61, G01Q80, G01Q60