Photosensitive composition

Abstract: A photosensitive composition contains an alkali-­ soluble polymer having a phenol skeleton in its struc­ ture and a heterocyclic compound represented by formula (I-1) or (I-2), formula (II-1) or (II-2), any of formulas (III-1) to (III-8), any of formulas (IV-1) to (IV-12), or any of formulas (V-1) to (V-4) described in the claims and specification. A photosensitive composition containing a heterocyclic compound represented by formula (I-1) or (I-2), any of formulas (III-1) to (III-8), any of formulas (IV-1) to (IV-12), or any of formulas (V-1) to (V-4) can be suitably used as a nega­ tive resist. A photosensitive composition containing a heterocyclic compound represented by formula (II-1) or (II-2) can be suitably used as a positive resist. A photosensitive composition containing an alkali-soluble polymer having a phenol skeleton in its structure and a polymer having a nitrogen-containing heterocyclic compound as a polymeric unit is also included in this invention. The latter photosensitive composition can further contain a heterocyclic compound represented by any of formulas (VI-1) to (VI-15) described in the claims and specification.

Description: The present invention relates to a photosensitive composition and, more particularly, to a photosensitive composition photosensitive to deep UV light. In recent years, a demand has arisen for high-density integration for realizing multifunctional high-density electronic equipment, and finer patterns to be formed in electronic parts have been required accordingly. In the manufacture of electronic parts such as semiconductor ICs requiring various types of micro-patterning techniques, a photosensitive resin is widely used in formation of fine patterns. As an exposure apparatus for use in formation of patterns using a photosensitive resin, a step-and-repeat reduction-projecting type mask aligner called a stepper is conventionally known. Examples of light for use in such an apparatus are g rays (wavelength = 436 nm), h rays (wavelength = 405 nm), and i rays (wavelength = 365 nm) of a mercury lamp, and XeF (wavelength = 351 nm), XeCℓ (wavelength = 308 nm), KrF (wavelength = 248 nm), KrCℓ (wavelength = 222 nm), ArF (wavelength = 193 nm), and F 2 (wavelength = 157 nm) of an excimer laser. In order to form fine patterns, the wavelength of light to be used is preferably short. Therefore, a demand has arisen for a resist sensitive to deep UV light such as an excimer laser. A conventional known example of a photosensitive resin photosensitive to an excimer laser is a photosensitive composition consisting of an acryl-based polymer such as polymethylmethacrylate (PMMA) or polyglutarmaleimide (PGMI) or a polymer having phenol and an azide-based photosensitizing agent. A photosensitive composition using the former polymer, however, has only low sensitivity to an excimer laser and a low dry etching resistance. Although a photosensitive composition using the latter polymer has high sensitivity and a high dry etching resistance, a sectional shape of a pattern formed by using this photosensitive composition becomes an inverted triangle. Therefore, there is a problem that it is difficult to control exposure and development steps. It is an object of the present invention to provide a photosensitive composition which has high sensitivity to radiation having a short wavelength such as deep Uv light, a high dry etching resistance, and a wide allowance in controlling exposure and development steps, and can form a fine pattern having a good sectional shape. The above object of the present invention is achieved by the following photosensitive compositions (A) and C having an alkali-soluble polymer having a phenol skeleton and a photosensitizing agent. Photosensitive Composition (A) A photosensitive composition containing an alkali-soluble polymer having a phenol skeleton in its structure and a heterocyclic compound represented by the following formula (I-1) or (I-2): wherein Z 1 represents nonmetal atoms required to form a heterocyclic ring containing nitrogen, and R 1 and R 2 may be the same or different and independently represent a hydrogen atom, an alkyl group having 1 to 20 carbon atoms, an alkoxy group, an acyl group, an alkenyl group, a hydroxyl group, an amino group, a dialkylamino group having 1 to 5 carbon atoms, a nitro group, a carboxyl group, a methoxycarbonyl group, an ethoxycarbonyl group, a carboxymethyl group, a carboxyethyl group, a carbamoyl group, a phenyl group, a tolyl group, a xylyl group, a mesityl group, a benzyl group, a styryl group, a cinnamyl group, a mercapto group, a cyano group, and a halogen atom. Photosensitive Composition (C) A photosensitive composition containing an alkali-soluble polymer having a phenol skeleton in its structure and a heterocyclic compound represented by one of the following formulas (III-1) to (III-8): wherein R 6 to R 9 may be the same or different and independently represent a hydrogen atom, an alkyl group having 1 to 20 carbon atoms, an alkoxy group, an acyl group, an alkenyl group, a hydroxyl group, an amino group, a dialkylamino group having 1 to 5 carbon atoms, a nitro group, a carboxyl group, a methoxycarbonyl group, an ethoxycarbonyl group, a carboxymethyl group, a carboxyethyl group, a carbamoyl group, a phenyl group, a tolyl group, a xylyl group, a mesityl group, a benzyl group, a styryl group, a cinnamyl group, a mercapto group, a cyano group, and a halogen atom. The photosensitive compositions (A) and (C) can be suitably used as a negative resist. The photosensitive compositions according to the present invention will be described in detail below. Examples of the alkali-soluble polymer having a phenol skeleton in its structure are a phenol novolak resin; a substituted phenol novolak resin such as cresol novolak resin and a xylenol novolak resin; a vinylphenolic resin; an isopropenylphenolic resin More specifically, an example is poly(p-vinylphenol); The photosensitive composition (A) according to the present invention contains the alkali-soluble polymer having a phenol skeleton in its structure described above and a heterocyclic compound represented by the following formula (I-1) or (I-2): wherein Z 1 represents nonmetal atoms required to form a heterocyclic ring containing nitrogen, and R 1 and R 2 may be the same or different and independently represent a hydrogen atom, an alkyl group having 1 to 20 carbon atoms, an alkoxy group, an acyl group, an alkenyl group, a hydroxyl group, an amino group, a dialkylamino group having 1 to 5 carbon atoms, a nitro group, a carboxyl group, a methoxycarbonyl group, an ethoxycarbonyl group, a carboxymethyl group, a carboxyethyl group, a carbamoyl group, a phenyl group, a tolyl group, a xylyl group, a mesityl group, a benzyl group, a styryl group, a cinnamyl group, a mercapto group, a cyano group, and a halogen atom. This photosensitive composition can be suitably used as a negative resist. Examples of a heterocyclic compound represented by formula (I-1) are pyridine or pyridine derivatives such as 2-ethylpyridine, 2,4-dimethylpyridine, 2-acetylpyridine, 2-methoxypyridine, 3-hydroxypyridine, 3-pyridine carboxylic acid, 2-chloropyridine, and 2-phenylpyridine; quinoline or quinoline derivatives such as 4-methylquinoline, 2-chloroquinoline, 8-hydroxyquinoline, 8-hydroxy-2-methylquinoline, 6-methoxyquinoline, and 4-quinoline carboxylic acid; diazine such as pyridazine, pyrimidine, and pyrazine or its derivatives; 1,3,5,-triazine or its derivatives. Examples of a heterocyclic compound represented by formula (I-2) are pyridine-1-oxide or pyridine-1-oxide derivatives such as 2-methylpyridine-1-oxide, 3-methylpyridine-1-oxide, 4-methylpyridine-1-oxide, 4-nitropyridine-1-oxide, 4-nitro-2-methylpyridine-1-oxide, 4-nitro-3,5-dimethylpyridine-1-oxide, 4-nitro-2,6-dimethylpyridine-1-oxide, 4-nitro-3-chloropyridine-1-oxide, 1-oxo-4-nitro-3-pyridine carboxylic acid, 4-acetylpyridine-1-oxide, 2-aminopyridine-1-oxide, 3-hydroxypyridine-1-oxide, and 2,6-dimethylpyridine-1-oxide; and quinoline-1-oxide or quinoline-1-oxide derivatives such as 4-nitroquinoline-1-oxide. A mixing ratio of a heterocyclic compound represented by formula (I-1) or (I-2) with respect to the alkali-soluble polymer having a phenol skeleton in its structure is preferably 1 to 500 parts by weight, and more preferably, 0.1 to 200 parts by weight with respect to 100 parts by weight of the polymer. If the mixing ratio of the heterocyclic compound is less than 0.1 parts by weight, satisfactory photosensitivity may not be imparted to the composition. If the mixing ratio exceeds 200 parts by weight, exposing light rays do not reach the surface of a resist film made of the composition in contact with a substrate to make it difficult to form a pattern having a good sectional shape. The photosensitive composition (C) according to the present invention contains the alkali-soluble polymer having a phenol skeleton in its structure and a heterocyclic compound represented by one of the following formulas (III-1) to (III-8): wherein R 6 to R 9 may be the same or different and independently represent a hydrogen atom, an alkyl group having 1 to 20 carbon atoms, an alkoxy group, an acyl group , an alkenyl group, a hydroxyl group, an amino group, a dialkylamino group having 1 to 5 carbon atoms, a nitro group, a carboxyl group, a methoxycarbonyl group, an ethoxycarbonyl group, a carboxymethyl group, a carboxyethyl group, a carbamoyl group, a phenyl group, a tolyl group, a xylyl group, a mesityl group, a benzyl group, a styryl group, a cinnamyl group, a mercapto group, a cyano group, and a halogen atom. This composition can be suitably used as a negative resist. Examples of heterocyclic compounds represented by formulas (III-1) to (III-8) are pyridazine, 3-methylpyridazine, 4-methylpyridazine, pyrazine, 2,5-dimethylpyrazine, 1,2,5-triazine, 2,4,6-trichloro-1,3,5-triazine, pyridazine-N-oxide, 4-pyridazine-N-oxide, 4,5-dimethylpyridazine-N-oxide, 4,6-dimethylpyrimidine-N-oxide, 4-methoxypyrimidine-N-oxide, pyrazine-N-oxide, 2,3-dichloropyrazine-N-oxide, 2,6-dichloropyrazine-N-oxide, 1,3,5-triazine-N-oxide, 2,4,6-trimethoxy-1,3,5-triazine-N-oxide, and 2,4,6-triol-1,3,5-triazine-N-oxide. A heterocyclic N-oxide compound represented by any of formulas (III-5) to (III-8) can be synthesized in accordance with a method described in G.B. Payne, "The Journal of Organic Chemistry", Vol. 26, P. 659 (1961). A mixing ratio of a heterocyclic compound represented by one of formulas (III-1) to (III-8) with respect to the alkali-soluble polymer having a phenol skeleton in its structure is preferably 1 to 300 parts by weight, and more preferably, 2 to 100 parts by weight with respect to 100 parts by weight of the polymer. If the mixing ratio of the heterocyclic compound is less than 1 part by weight, it is difficult to impart satisfactory photosensitivity to the composition. If the mixing ratio exceeds 300 parts by weight, transmittance of a resist film made of the composition is reduced to make it difficult for exposing light rays to reach a substrate side of the resist film. As a result, it becomes difficult to form a pattern having a good sectional shape. The photosensitive compositions (A) and (C) according to the present invention may contain a surfactant as a film modifier, and a dye as a reflection inhibitor, as needed in addition to the above components. A pattern formation method using the photosensitive composition according to the present invention will be described below. Any of the photosensitive compositions (A) and (C) is dissolved in an organic solvent to prepare a resist solution. Examples of the solvent are a ketone-based solvent such as cyclohexane, furfural, methylethylketone, and methylisobutylketone; a cellosolve-based solvent such as methylcellosolve, methylcellosolve acetate, ethylcellosolve acetate, and butylcellosolve acetate; an ester-based solvent such as ethyl acetate, butyl acetate, isoamyl acetate, and ethyl lactate; an alcohol-based solvent such as 1-butanol, 2-butanol, isoamylalcohol, and diethyleneglycol; a polyvalent alcohol derivative-based solvent such as ethyleneglycol dimethylether, diethyleneglycol monoethylether, and ethylcarbitol; and a nitrogen compound-based solvent such as morpholine, N-methyl-2-pyrrolidone, benzonitrile, and pyridine. These solvents can be used singly or in a combination of two or more thereof. Thereafter, the prepared resist solution is coated on a substrate by a conventional method such as a spin-coating method or a dipping method and then dried to form a resist film. Examples of the substrate on the surface of which the resist film is to be formed are a silicon wafer, a silicon wafer having steps formed by various insulating films, electrodes, and wirings, a semiconductor wafer consisting of a Group III-V compound such as GaAs and AℓGaAs, a piezoelectric wafer consisting of, e.g., a rock crystal,lithium tantalate, and a blank mask. Deep UV light is radiated on the resist film through a mask having a desired pattern to perform pattern exposure. A mercury lamp, for example, can be used as a light source of the deep UV light. After pattern exposure, the resist film is developed by using an alkaline solution. when any of the photosensitive composition (A) and (C) is used, a nonexposed portion of the resist film is dissolved and removed upon development, thereby forming a desired negative pattern. Examples of the alkali solution for use in development of the resist film are an aqueous organic alkaline solution such as an aqueous tetramethylammoniumhydroxide (TMAH) solution and aqueous inorganic alkaline solutions such as an aqueous potassium hydroxide solution and an aqueous sodium hydroxide solution. As the developing method, a conventional dipping method, spraying method, can be used. After development, rinsing can be performed by using, e.g., water. The present invention will be described in more detail below by way of its examples. Example 1 100 g of poly(p-vinylphenol) and 20 g of 2-ethylpyridine were dissolved in 300 g of ethylcellosolve acetate. The resultant solution was filtered by using a 0.2 µm pore size-fluoroplastic membrane filter to prepare a resist solution. This prepared resist solution was coated on a silicon wafer and dried on a hot plate at 90°C for four minutes to form a 1.0 µm thick resist film. Thereafter, the formed resist film was pattern-exposed (200 mJ/cm 2 ) by using a reduction-projecting exposure apparatus using KrF excimer laser light (wavelength = 248 nm). After pattern exposure, the resist film was dipped in an aqueous TMAH solution having a concentration of 0.95 wt% for one minute, to perform development. As a result, a nonexposed portion of the resist film was dissolved and removed to obtain a highly precise resist pattern having a rectangular sectional shape with a line width of 0.40 µm. Example 2 100 g of a 3,5-xylenol novolak resin and 15 g of 2-chloropyridine were dissolved in 300 g of ethylcellosolve acetate. The resultant solution was filtered by using a 0.2 µm pore size-fluoroplastic membrane filter to prepare a resist solution. A resist pattern was formed following the same procedures as in Example 1. Note that pattern exposure was performed at 260 mJ/cm 2 and the concentration of an aqueous TMAH solution was set to be 1.43 wt%. As a result, a nonexposed portion of the resist film was dissolved and removed to obtain a resist pattern having a rectangular sectional shape with a line width of 0.40 µm. Example 3 100 g of poly(p-vinylphenol) and 20 g of 4-methylpyridine-1-oxide were dissolved in 400 g of cyclohexanone. The resultant solution was filtered by using a 0.2 µm pore size-fluoroplastic membrane filter to prepare a resist solution. A resist pattern was formed following the same procedures as in Example 1. Note that pattern exposure was performed at 180 mJ/cm 2 . As a result, a nonexposed portion of the resist film was dissolved and removed to obtain a resist pattern having a rectangular sectional shape with a line width of 0.35 µm. Example 4 100 g of a 3,5-xylenol novolak resin and 25 g of pyridine-N-oxide were dissolved in 300 g of ethylcellosolve acetate. The resultant solution was filtered by using a 0.2 µm pore size-fluoroplastic membrane filter to prepare a resist solution. A resist pattern was formed following the same procedures as in Example 1. Note that pattern exposure was performed at 250 mJ/cm 2 and the concentration of an aqueous TMAH solution was set to be 1.43 wt%. As a result, a nonexposed portion of the resist film was dissolved and removed to obtain a highly precise resist pattern having a rectangular sectional shape with a line width of 0.40 µm. Example 5 100 g of poly(p-vinylphenol) and 12 g of quinoline-1-oxide were dissolved in 400 g of cyclohexanone. The resultant solution was filtered by using a 0.2 µm pore size-fluoroplastic membrane filter to prepare a resist solution. A resist pattern was formed following the same procedures as in Example 1. Note that pattern exposure was performed at 180 mJ/cm 2 . As a result, a nonexposed portion of the resist film was dissolved and removed to obtain a highly precise resist pattern having a rectangular sectional shape with a line width of 0.35 µm. Example 6 100 g of poly(p-vinylphenol) and 25 g of 4-nitropyridine-N-oxide were dissolved in 400 g of cyclohexanone. The resultant solution was filtered by using a 0.2 µm pore size-fluoroplastic membrane filter to prepare a resist solution. A resist pattern was formed following the same procedures as in Example 1. Note that pattern exposure was performed at 140 mJ/cm 2 . As a result, a nonexposed portion of the resist film was dissolved and removed to obtain a highly precise resist pattern having a rectangular sectional shape with a line width of 0.35 µm. Example 7 The resist solution prepared in Example 3 was coated on the surface of an aluminum film (Aℓ film) formed on a silicon wafer, and a resist pattern having a line width of 0.35 µm was formed following the same procedures as in Example 3. By using the formed resist pattern as a mask, an exposed Aℓ film was dry-etched by CBrCℓ 3 gas. As a result, the pattern having a line width of 0.35 µm similar to the resist pattern could be precisely transferred onto the Aℓ film. Comparative Example 1 A polymethylmethacrylate solution was coated on the surface of an Aℓ film formed on a silicon wafer, and a resist pattern was formed following the same procedures as in Example 1. By using the formed resist pattern as a mask, an exposed Aℓ film was dry-etched by CBrCℓ 3 gas. As a result, the polymethylmethacrylate pattern disappeared during etching of the Aℓ film and therefore could not be perfectly transferred. Example 8 100 g of poly(p-vinylphenol) and 20 g of 3-methylpyridazine were dissolved in 300 g of ethylcellosolve acetate. The resultant solution was filtered by using a 0.2 µm pore size-fluoroplastic membrane filter to prepare a resist solution. The prepared resist solution was coated on a silicon wafer and dried on a hot plate at 90°C for five minutes to form a 1.0 µm thick resist film. Thereafter, the formed resist film was pattern-exposed (500 mJ/cm 2 ) by using a reduction-projecting exposure apparatus using KrF excimer laser light (wavelength = 248 nm). After pattern exposure, the resist film was dipped in an aqueous TMAH solution having a concentration of 0.95 wt% for one minute to perform development. As a result, a nonexposed portion of the resist film was dissolved and removed to obtain a highly precise resist pattern having a rectangular sectional shape with a line width of 0.40 µm. Example 9 100 g of a 3,5-xylenol novolak resin and 18 g of 4-methylpyridine were dissolved in 300 g of ethylcellosolve acetate. The resultant solution was filtered by using a 0.2 µm pore size-fluoroplastic membrane filter to prepare a resist solution. A resist pattern was formed following the same procedures as in Example 8. Note that the pattern exposure was performed at 580 mJ/cm 2 and the concentration of an aqueous TMAH solution was set to be 1.43 wt%. As a result, a nonexposed portion of the resist film was dissolved and removed to obtain a highly precise negative pattern having a rectangular sectional shape with a line width of 0.40 µm. Example 10 100 g of poly(p-vinylphenol) and 20 g of 2,5-dimethylpyrazine were dissolved in 400 g of cyclohexanone. The resultant solution was filtered by using a 0.2 µm pore size-fluoroplastic membrane filter to prepare a resist solution. A resist pattern was formed following the same procedures as in Example 8. Note that the pattern exposure was performed at 480 mJ/cm 2 . As a result, a nonexposed portion of the resist film was dissolved and removed to obtain a highly precise negative pattern having a rectangular sectional shape with a line width of 0.40 µm. Example 11 100 g of a 3,5-xylenol novolak resin and 16 g of 1,3,5-triazine were dissolved in 300 g of ethylcellosolve acetate. The resultant solution was filtered by using a 0.2 µm pore size-fluoroplastic membrane filter to prepare a resist solution. A resist pattern was formed following the same procedures as in Example 8. Note that the concentration of an aqueous TMAH solution was set to be 1.43 wt%. As a result, a nonexposed portion of the resist film was dissolved and removed to obtain a highly precise negative pattern having a rectangular sectional shape with a line width of 0.40 µm. Example 12 100 g of poly(p-vinylphenol) and 18 g of pyridazine-N-oxide were dissolved in 400 g of cyclohexanone. The resultant solution was filtered by using a 0.2 µm pore size-fluoroplastic membrane filter to prepare a resist solution. A resist pattern was formed following the same procedures as in Example 8. Note that the pattern exposure was performed at 220 mJ/cm 2 . As a result, a nonexposed portion of the resist film was dissolved and removed to obtain a highly precise negative pattern having a rectangular sectional shape with a line width of 0.35 µm. Example 13 100 g of poly(p-vinylphenol) and 18 g of 4,6-dimethylpyrimidine-N-oxide were dissolved in 400 g of cyclohexanone. The resultant solution was filtered by using a 0.2 µm pore size-fluoroplastic membrane filter to prepare a resist solution. A resist pattern was formed following the same procedures as in Example 8. Note that the pattern exposure was performed at 180 mJ/cm 2 . As a result, a nonexposed portion of the resist film was dissolved and removed to obtain a highly precise negative pattern having a rectangular sectional shape with a line width of 0.35 µm. Example 14 100 g of poly(p-vinylphenol) and 20 g of 2,3-diethylpyrazine-N-oxide were dissolved in 400 g of cyclohexanone. The resultant solution was filtered by using a 0.2 µm pore size-fluoroplastic membrane filter to prepare a resist solution. A resist pattern was formed following the same procedures as in Example 8. Note that pattern exposure was performed at 160 mJ/cm 2 . As a result, a nonexposed portion of the resist film was dissolved and removed to obtain a highly precise negative pattern having a rectangular sectional shape with a line width of 0.35 µm. Example 15 100 g of poly(p-vinylphenol) and 16 g of 2,4,6-trimethoxy-1,3,5-triazine-N-oxide were dissolved in 400 g of cyclohexanone. The resultant solution was filtered by using a 0.2 µm pore size-fluoroplastic membrane filter to prepare a resist solution. A resist pattern was formed following the same procedures as in Example 8. Note that pattern exposure was performed at 160 mJ/cm 2 . As a result, a nonexposed portion of the resist film was dissolved and removed to obtain a highly precise negative pattern having a rectangular sectional shape with a line width of 0.35 µm. Example 16 The resist solution prepared in Example 14 was coated on the surface of an Aℓ film formed on a silicon wafer, and a negative pattern having a line width of 0.35 µm was formed following the same procedures as in Example 14. By using the formed resist pattern as a mask, an exposed Aℓ film was dry-etched by CBrCℓ 3 gas. As a result, the pattern having a line width of 0.35 µm similar to the resist pattern could be precisely transferred onto the Aℓ film. Comparative Example 2 An Aℓ film was formed on a silicon wafer, and a polymethylmethacrylate solution was coated on the surface of an Aℓ film. Thereafter, a negative pattern was formed following the same procedures as in Example 8. By using the formed negative pattern as a mask, an exposed Aℓ film was dry-etched by CBrCℓ 3 gas. As a result, the polymethylmethacrylate pattern disappeared during etching of the Aℓ film and therefore could not be perfectly transferred.

Claims: A photosensitive composition for use as a negative resist containing an alkali-soluble polymer having a phenol skeleton in its structure and a heterocyclic compound represented by the following formula (I-1) or (I-2): wherein Z 1 represents nonmetal atoms required to form a heterocyclic ring containing nitrogen, and R 1 and R 2 may be the same or different and independently represent a hydrogen atom, an alkyl group having 1 to 20 carbon atoms, an alkoxy group, an acyl group, an alkenyl group, a hydroxyl group, an amino group, a dialkylamino group having 1 to 5 carbon atoms, a nitro group, a carboxyl group, a methoxycarbonyl group, an ethoxycarbonyl group, a carboxymethyl group, a carboxyethyl group, a carbamoyl group, a phenyl group, a tolyl group, a xylyl group, a mesityl group, a benzyl group, a styryl group, a cinnamyl group, a mercapto group, a cyano group, and a halogen atom. A composition according to claim 1, characterised in that said heterocyclic compound represented by formula (I-1) or (I-2) is selected from the group consisting of pyridine or a pyridine derivative, quinoline or a quinoline derivative, diazine or a diazine derivative, 1,3,5-triazine or a 1,3,5-triazine derivative, pyridine-1-oxide or a pyridine-1-oxide derivative, and quinoline-1-oxide or a quinoline-1-oxide derivative. A composition according to claim 1, characterised in that: said alkali-soluble polymer having a phenol skeleton in its structure is selected from the group consisting of a phenol novolak resin, a cresol novolak resin, a xylenol novolak resin, a vinylphenol resin, an isopropenylphenol resin, and said heterocyclic compound represented by formula (I-1) or (I-2) is selected from the group consisting of 2-ethylpyridine, 2,4-dimethylpyridine, 2-acetylpyridine, 2-methoxypyridine, 3-hydroxypyridine, 3-pyridine-carboxylic acid, 2-chloropyridine, 2-phenylpyridine, 4-methylquinoline, 2-chloroquinoline, 8-hydroxyquinoline, 8-hydroxy-2-methylquinoline, 6-methoxyquinoline, 4-quinolinecarboxylic acid, pyridazine, pyrimidine, pyrazine, 2-methylpyridine-1-oxide, 3-methylpyridine-1-oxide, 4-methylpyridine-1-oxide, 4-nitropyridine-1-oxide, 4-nitro-2-methylpyridine-1-oxide, 4-nitro-3,5-dimethylpyridine-1-oxide, 4-nitro-2,6-dimethylpyridine-1-oxide, 4-nitro-3-chloropyridine-1-oxide, 1-oxo-4-nitro-3-pyridinecarboxylic acid, 4-acetylpyridine-1-oxide, 2-aminopyridine-1-oxide, 3-hydroxypyridine-1-oxide, 2,6-dimethylpyridine-1-oxide, 4-nitroquinoline-1-oxide. A composition according to any one of claims 1 to 3, characterised in that a mixing ratio of said heterocyclic compound represented by formula (I-1) or (I-2) is 1 to 500 parts by weight with respect to 100 parts by weight of said alkali-soluble polymer having a phenol skeleton in its structure. A composition according to claim 1, characterised in that the heterocyclic compound is a heterocyclic compound represented by any of the following formulae (III-1) to (III-8): wherein R 6 to R 9 may be the same or different and independently represent a hydrogen atom, an alkyl group having 1 to 20 carbon atoms, an alkoxy group, an acyl group, an alkenyl group, a hydroxyl group, an amino group, a dialkylamino group having 1 to 5 carbon atoms, a nitro group, a carboxyl group, a methoxycarbonyl group, an ethoxycarbonyl group, a carboxymethyl group, a carboxyethyl group, a carbamoyl group, a phenyl group, a tolyl group, a xylyl group, a mesityl group, a benzyl group, a styryl group, a cinnamyl group, a mercapto group, a cyano group, and a halogen atom. A composition according to claim 5, characterised in that said alkali-soluble polymer having a phenol skeleton in its structure is selected from the group consisting of a phenol novolak resin, a cresol novolak resin, a xylenol novolak resin, a vinylphenol resin, an isopropenylphenol resin, and said heterocyclic compound represented by any of formulae (III-1) to (III-8) is selected from the group consisting of pyridazine, 3-methylpyridazine, 4-methylpyrimidine, pyrazine, 2,5-dimethylpyrazine, 1,2,5-triazine, 2,4,6-trichloro-1,3,5-triazine, pyridazine-N-oxide, 4-pyridazine-N-oxide, 4,5,-dimethylpyridazine-N-oxide, 4,6,-dimethylpyrimidine-N-oxide, 4-methoxypyrimidine-N-oxide, pyrazine-N-oxide, 2,3-dichloropyrazine-N-oxide, 2,6-dichloropyrazine-N-oxide, 1,3,5-triazine-N-oxide, 2,4,6-trimethoxy-1,3,5-triazine-N-oxide, and 2,4,6-triol-1,3,5-triazine-N-oxide. A composition according to one of claims 5 and 6, characterised in that a mixing ratio of said heterocyclic compound represented by any of formulae (III-1) to (III-8) is 1 to 300 parts by weight with respect to 100 parts by weight of said alkali-soluble polymer having a phenol skeleton in its structure.

Inventors: HAYASE RUMIKO, KOBAYASHI YOSHIHITO, NIKI HIROKAZU, ONISHI YASUNOBU, HAYASE, RUMIKO, KOBAYASHI, YOSHIHITO, NIKI, HIROKAZU, ONISHI, YASUNOBU, HAYASE, RUMIKO, C/O INTELLECTUAL PROPERTY DI, KOBAYASHI, YOSHIHITO, C/O INTELLECTUAL PROPERTY DI, NIKI, HIROKAZU, C/O INTELLECTUAL PROPERTY DIVISION, ONISHI, YASUNOBU, C/O INTELLECTUAL PROPERTY DIV.
Applicants: TOSHIBA KK, KABUSHIKI KAISHA TOSHIBA
Application year: 1990
Main classification: G03F7
IPC codes: G03F7