Matching circuit for high frequency transistor

Abstract: In a matching circuit for a high-frequency transistor (101), using a microstrip line for the main line (104,105) and having a high-frequency transistor side main line shaped in a taper form (106,107), a thin-film capacitor (108,109) and a grounding circuit (112,113) are disposed between the tapcr part and the ground. The length of the parts of the thin-film capacitor is different in the signal traveling directions or the shape of the grounding circuit is different so that the impedance is matched at the output position of the thin-film capacitor part, while the spatial phase difference of high-frequency signals can be compensated at thc same time.

Description: The present invention relates to a matching circuit for input and output of a transistor used in high-frequency, high-power amplifier, and more particularly to a matching circuit for a high-frequency, high-power transistor capable of eliminating reduction of amplification efficiency due to phase difference caused by spatial dimensions of the transistor, as well as matching the impedance. In the field of electric communications, the signal frequency is becoming higher, and especially in the field of satellite communications the frequency is exceeding 10 GHz. Along with this trend, the devices and apparatuses used at such frequency are required to be smaller in size, and accordingly there is an increasing need for integrated circuits of low price and favorable characteristics that can be used in such microwave band. The input and output impedances of transistors for high frequency employed in such integrated circuits do not generally coincide with the main transmission line characteristic impedance (50 ohms). In the main transmission line, those known as microstrip lines are widely employed. In order to amplify an electric signal efficiently, it is desired that the transistor input and output impedances and the impedances of the main line microstrip lines of input and output be matched as much as possible, and the reflection at the matching point should be as small as possible. In particular, the input and output impedances of transistor for high frequency and high-power is much lower than 50 ohms, and usually an element of low impedance is inserted parallel to the input and output main line microstrip lines in order to match the impedance. The impedance, Zos, of an open microstrip line (an open stub) is expressed as follows: Zos = -j . cot βL where β = 2π/λ; λ is the wavelength on the microstrip line at the frequency desired to be matched; and L = Length of the microstrip line. Therefore, Zos becomes smaller as βL approaches π/2, that is, as L approaches λ/4, and by selecting a proper value, matching with the transistor is achieved. A typical structure of a conventional high-frequency amplifier according to this method is shown in Fig. 7. In Fig. 7, numeral 101 denotes a field effect transistor (FET), 102 is an input matching circuit substrate, 103 is an output matching circuit substrate, 104 is a main line composed of a microstrip line connected to an input terminal, 105 is a main line composed of a microstrip line connected to an output terminal, and 106, 107 are so-called taper parts each having gradually widening electrode width and disposed at the transistor side of the main line. Numerals 110, 111 are wires for connecting the transistor and the taper parts, 701, 702 are insular electrodes (pads) for adjustment of input and output impedance matching, respectively, and 703, 704 are wires for connecting the taper parts and the adjusting pads. In this construction, the adjustment of the input matching circuit and output matching circuit is achieved by connecting the adjusting pads with wires. A typical example of such adjusting method is disclosed in the Japanese Patent Publication 57-23441. As an improved version thereof, a method of employing chip capacitors for matching is known. For example, a typical example is reported in "Broad-Band Internal Matching of Microwave Power GaAs MESFET's," K. Honjo, Y. Takayama, and A. Higashisaka, IEEE Transactions on Microwave Theory and Techniques, Vol. MTT-27, No. 1, 1979, pp. 3-8. A typical structure of this method is shown in Fig. 8. In Fig. 8, numerals 101 to 107 denote the same parts as in Fig. 7. Numerals 801 and 802 are chip capacitors for input and output impedance matching, respectively, and both lower electrodes are connected on a grounded base, and the upper electrodes are connected to the main line microstrip line taper parts of input and output matching adjusting circuit substrates and the transistor by means of wires 803, 804, 805, 806. In this structure, the input and output matching is achieved by the chip capacitor and the inductance of the wire connecting it. Besides, a method of matching by using a thin-film capacitor instead of the chip capacitor is disclosed in "Microwave Integrated-Circuit Technology-A Survey," M. Caulton, and H. Sobol, IEEE Journal of Solid-State Circuits, Vol. SC-5, No. 6, 1970, pp. 292-303. In these conventional methods, however, matching of only the impedance is taken into consideration, and no consideration is given to the phase difference of electric signals in the taper parts, and they are insufficient as matching circuits for a high-frequency, high-power FET having a gate width comparable to the signal wavelength, in particular. At 14 GHz, for example, the length corresponding to 1/4 wavelength on the alumina substrate or GaAs substrate is about 2 mm. On the other hand, the gate width of the GaAs FET for obtaining an output of 3 watts is about 4 mm. Therefore, there is a considerable phase difference between the electric signal passing the central part of the taper part and the electric signal passing the end part. When a phase difference occurs in the input signal, a phase difference also takes place in the signal after being amplified by the FET, and as a result the synthesized output signal is attenuated, and the amplification efficiency is lowered. At the taper part in the output area, too, a spatial phase difference occurs, and the performance is further lowered. In the matching method by the open stub shown in the first prior art, it is considerably difficult to match the high-frequency, high-power FET which has low input, output impedances, and usually the composition of the second prior art is employed. In the case of the second prior art, however, it is necessary to connect a large chip capacitor separately. Accordingly, it is easier to match the impedance than in the first prior art, but in the manufacturing procedure the process for mounting the chip is increased, and a chip mounting part is additionally required, which makes it hard to reduce size and integrate to a high degree. As a result the manufacturing cost becomes higher. By modifying the shape of the taper parts to reduce the spatial phase difference, other methods are proposed for example in the Japanese Patent Publications 64-50602, 64-74812, but these are not intended to satisfy the impedance matching simultaneously. Incidentally, as a method of matching while eliminating the spatial phase difference, so-called power distributors and power synthesizers using the impedance converters of 1/4 wavelength are known, and they are generally used in the power amplifiers of several watts or more. It is, however, difficult to reduce the size because an impedance converter in the length of at least 1/4 wavelength is required. It is hence a primary object of the invention to present a matching circuit for a high-frequency, high-power transistor capable of matching the impedance of high-frequency, high-power transistor, which is low in impedance and large in size, and compensating the spatial phase difference thereof simultaneously, and further small in the number of mounting processes, capable of reducing size and integrating to a high degree, and low in manufacturing cost. To achieve the above object, the invention presents a matching circuit having a main line composed of a microstrip line, a high-frequency transistor side main line shaped in taper, and a thin-film capacitor part made of a dielectric different in the dielectric constant from a substrate and disposed between the taper part and the ground, wherein the length of the thin-film capacitor part in a traveling direction of a high-frequency signal is continuously different in the taper part so that a phase difference of the high-frequency signal is compensated at an output position of the thin-film capacitor part. The invention also presents a matching circuit having a main line composed of a microstrip line, a high-frequency transistor side main line shaped in taper, and a series circuit of a thin-film capacitor and a closed microstrip line between the taper part and the ground, wherein the length of the closed microstrip line to the ground is different at the part of the thin-film capacitor so that a phase difference of the high-frequency signal is compensated at an output position of the thin-film capacitor part. In the constitution described herein, the low impedance of the high-frequency, high-power transistor is matched, while the phase difference of signal due to spatial size of the transistor can be eliminated at the same time. Moreover, the number of mounting processes is small, and smaller size and higher integration are possible, so that a matching circuit for a high-frequency, high-power transistor can be realized at a low manufacturing cost. Fig. 1 is a top view showing a first embodiment of the invention; Fig. 2 is a sectional view of the first embodiment; Fig. 3 is a top view showing a second embodiment of the invention; Fig. 4 is a top view showing a third embodiment of the invention; Fig. 5 is a sectional view of the third embodiment; Fig. 6 is a top view of a fourth embodiment of the invention; and Fig. 7 and Fig. 8 are top views of conventional matching circuits. Embodiment 1 Referring now to the drawings, some of the embodiments of the matching circuit for a high-frequency transistor of the invention are described in detail below. Fig. 1 is a top view of a structure of a first embodiment of the matching circuit for a high-frequency transistor of the invention. In Fig. 1, numerals 101 to 107, and 110, 111 denote the same parts as in Fig. 7. Namely, numeral 101 is a field effect transistor (FET), 102 is an input matching circuit substrate, 103 is an output matching circuit substrate, 104 is a main line composed of a microstrip line connected to an input terminal, 105 is a main line composed of a microstrip line connected to an output terminal, and 106, 107 are taper parts each disposed at the transistor side of the main line. Numeral 112, 113 are wires for connecting the taper parts and the transistor 101. Numeral 108 is a thin-film capacitor for input matching composing a part of the taper part 106 by one of its electrodes, 109 is a thin-film capacitor for output matching composing a part of the taper part 107 by one of its electrodes, and 112, 113 are grounding terminals connected to the other electrodes of the thin-film capacitors 108, 109, and are each connected to an electrode on the rear surface of the substrate through the substrate side surface. Fig. 2 shows its sectional structure, in which the reference numbers of parts are the same as in Fig. 1. Numeral 201 is a dielectric thin film which is a principal constituent part of the thin-film capacitor 108, and 202 is the ground side electrode on the rear surface of the substrate. As evident from this drawing, the thin-film capacitor 108 has the electrode forming the taper part as one of its electrodes, and is opposite to the grounding terminal 112 connected to the substrate rear surface electrode 202 through the substrate side surface, with the dielectric thin film 201 intervened therebetween. The input, output matching circuit substrates 102, 103 are alumina ceramic substrates, and Cr-Au is used in conductive parts of main lines 104, 105, microstrip lines and others. Thin-film capacitors 108, 109 are each in a metal-dielectric-metal structure using silicon oxide with the dielectric constant of about 4 as the dielectric. The thickness of the alumina ceramic substrate is 240 microns, and the thickness of the dielectric thin film is about 1 micron. As the transistor 101, a GaAs FET is used, and the frequency to be matched is 14 GHz. When the dielectric constant of the alumina substrate is 9.8, the length of the microstrip line corresponding to 1/4 wavelength at 14 GHz is about 2 mm. In this structure, the impedance matching of input matching and output matching is effected by setting the electrostatic capacitance of the thin-film capacitors 108, 109 to a proper value. The matching method in this system is described in further detail below. As described above, the input, output impedances of the FET for high-power are several ohms to one ohm or less, being considerably lower than 50 ohms of the impedance of the main line. Accordingly, in this embodiment, in order to match them, the thin-film capacitor is inserted between the main line microstrip line and the ground. The wiring portion up to the ground is assumed to be a kind of microstrip line, and supposing its length to be L, the impedance Zin of this series circuit is Zin = 1/jωC + jZo . tan βL = j (1/ωC - Zo . tan βL) where ω = 2 πf β = 2 π/λ f : frequency to be matched C : electrostatic capacitance of the thin-film capacitor Zo : characteristic impedance of the microstrip line λ : wavelength in the substrate of the frequency to be matched L : length of the microstrip line up to the ground Since the effect of the microstrip line up to the ground appears as tangent function, ∫f βL = π/2, that is, L is sufficiently small as compared with the 1/4 wavelength, its effect is small. In this case, accordingly, if the lengthes from different parts of the thin-film capacitor to the grounding point are somewhat different from each other, the difference may be almost ignored. Therefore, by substantially selecting the electrostatic capacitance C at a proper value, the value of Zin can be easily controlled to be several ohms or one ohm or less. The operation of the spatial phase difference compensation of this embodiment is described below. The electric signal coming up to the taper start part in phase is further propagated as being spread along the taper contour in the taper part 106 to reach the thin-film capacitor 108. Usually, the distance is longer in the end part of the taper part than in the central part, and in the case of the first embodiment, too, it is set so that the distance may be longer at the end part to reach the thin-film capacitor. The electric signal entering the thin-film capacitor is varied in the phase velocity because the dielectric constant of the thin-film capacitor is different from that of the substrate. Since the phase velocity is inverse proportional to the square root of the dielectric constant, the phase velocity is faster when the dielectric constant is smaller. For example, if the substrate on which the microstrip line is formed is an alumina substrate, its dielectric constant is 9.8, and the dielectric constant of silicon oxide, a dielectric for forming the thin-film capacitor, is 4, the phase velocity in the thin-film capacitor is faster than the phase velocity in the taper part by 9.8/4 = 1.57 times. Therefore, by setting the length of the thin-film capacitor of the side end part properly longer than the length of the thin-film capacitor in the central part, the phase delay at the side end part generated until reaching the thin-film capacitor can be restored. When the length of the main line microstrip line from the thin-film capacitor till the transistor is made equal to the length of the connecting wire, the phase difference of the electric signals can be compensated at the input part of the transistor. At this time, by setting the electrostatic capacitance of the thin-film capacitor at a value suited to the impedance matching, the impedance matching can be achieved at the same time. The relation between the lengthes of the taper part and the thin-film capacitor and the phases of the electromagnetic waves at the portion passing these parts is described in further detail below. As shown in Fig. 1, supposing the linear distance from the taper part branching point to the thin-film capacitor in the central part and side end part to be respectively Lt1, Lt2, the lengthes therefrom up to the output part of the thin-film capacitor in the respective travelling directions to be respectively Lc1, Lc2, the phase velocity in the taper part to be Vt and the phase velocity in the thin-film capacitor to be Vc, the condition that the phases of the electromagnetic waves branched off from the taper part branching point to be identical to each other is the same as the condition that the time required for the electromagnetic wave to reach from the taper part branching point up to the thin-film capacitor output part is identical at all parts. This relation is expressed as follows: Lt1 Vt + Lc1 Vc = Lt2 Vt + Lc2 Vc Suppose the phase velocity in the thin-film capacitor is a times the velocity in the taper part, then it follows that: Vc = a Vt, and this relation is put into equation (4) and is modified as: a Lt1 + Lc1 = a Lt2 + Lc2. Hence there exists a solution to satisfy this equation even considering that the shape of the taper part is usually in the condition of Lt1 + Lc1 < Lt2 + Lc2. For example, supposing a = 1.57, it is enough to set as follows (the unit is arbitrary): Lt1 = 1 Lc1 = 0 Lt2 = 0. 5 Lc2 = 0. 785. If it is not desired to make Lc1 = 0, Lc1 and Lc2 may be increased by the same amount, for example, Lt1 = 1 Lc1 = 0 + 0. 2 Lt2 = 0. 5 Lc2 = 0. 785 + 0. 2. These figures are only few examples, and various other designs are possible. In the case of the output circuit, the process is reverse to that of the input circuit, but it is consequently evident that the phase difference of electric signals caused between the side end part and the central part of the taper part end portion in the absence of the thin-film capacitor can be compensated by using the thin-film capacitor in the same way as in the input portion. As for the impedance matching, too, it is possible to match in the same way as in the input circuit. The performance was compared between the case of employing the structure of this embodiment and the case of employing the structure of the second prior art, by using the GaAs FET of the same performance with the gate width of about 4 mm and output of about 3 watts, the power conversion efficiency was 15% and linear gain was 4 dB at 15 GHz in the method of the prior art, while the power conversion efficiency was 25% and the linear gain was 5 dB in the structure of this embodiment, and the electric characteristic was markedly enhanced. Embodiment 2 A second embodiment of the invention is shown in Fig. 3. In Fig. 3, the reference numbers and names of parts are the same as in Fig. 1. As each of the thin-film capacitors 108, 109, however, a thin-film capacitor in a metal-dielectric-metal structure using titanium oxide with dielectric constant of about 90 as the dielectric is employed. The transistor and matching frequency are the same as in the first embodiment. The difference from the first embodiment lies in the dielectric constant of the thin-film capacitor and the shape and dimensions of the thin-film capacitor. In this case, the dielectric constant of the thin-film capacitor is greater than that of the substrate, and hence the phase velocity in the thin-film capacitor part is slower than that in the taper part, or 9.8/90 = 0.33 times. In this case, therefore, contrary to the case of the first embodiment, it is designed so that the length of the thin-film capacitor be shorter in the portion closer to the side end of the taper part, than the central part, so that the phase of the electric signals at the parts out of the thin-film capacitor can be equalized anywhere. Thus, in the first and second embodiments, the effects of the grounding circuit of the thin-film capacitors can be almost ignored, or the effects are exactly the same at all parts of the taper. In such conditions, the impedance matching and spatial phase difference compensation are realized by the thin-film capacitors. The thin-film capacitor can be manufactured by the thin film forming technology such as chemical vapor-phase deposition and sputtering, and it is easy to fabricate by integrating together on various substrates such as alumina substrates. Therefore, unlike the prior art, the chip capacitor is not needed, and the number of mounting processes is small, so that it is possible to reduce size and integrate to high degree, and hence the manufacturing cost can be lowered. Embodiment 3 Fig. 4 shows a third embodiment of manufacture of the invention. In Fig. 4, numerals 101 to 113 are the same as in the embodiment in Fig. 1. In this case, since the structure of each of the thin-film capacitor grounding circuits 112, 113 is different from that in the first embodiment, wire connection terminals 401, 402 are disposed in this embodiment. The terminals 401, 402 are electrically connected with the upper electrodes of the thin-film capacitors, and are electrically isolated from the grounding circuit. The grounding circuit is set so that the length up to the substrate rear side electrode 202 may be closer to the 1/4 wavelength in the central part of the tapper, and shorter as going toward the side end part. Fig. 5 shows the sectional structure of this embodiment, in which the part numbers and names are the same as in Figs. 1, 2. The input, output matching circuit substrates are alumina ceramic substrates, and Cr-Au is used in conductive parts in the main lines, microstrip lines and others. The thin-film capacitors are each in metal-dielectric-metal structure using silicon oxide with the dielectric constant of about 4 as the dielectric. The transistor and matching frequency are the same as in the first embodiment. The matching method of this system is described in further detail below. In this embodiment, in order to match the impedance, a series circuit of a thin-film capacitor and a closed microstripline is inserted between the main line microstrip line and the ground. In the first and second embodiments, the grounding circuit may be substantially ignored, or the conditions are nearly equal in all parts of the taper, but in this embodiment, the microstrip line used in the grounding circuit is used for a positive purpose. Supposing the length of the microstrip line to the ground to be L, the impedance Zin of the series circuit is expressed by equation (2). Therefore, the value of Zin can be easily made within several ohms to one ohm or less, by properly selecting the length of the microstrip line up to the ground and the electrostatic capacitance of the thin-film capacitor. The operation of the spatial phase difference compensation of this embodiment is explained below. The electric signal coming up to the taper branching portion in phase is propagated as being expanded along the taper at the taper part to reach the thin-film capacitor part. Usually, the distance is longer at the side end part of the taper than in the central part, and in this embodiment, too, the side end part is longer. The electric signal entering the thin-film capacitor is changed in the phase velocity in the thin film capacitor part. The phase velocity is inverse proportional to the square root of the dielectric constant if the counterelectrode of the thin-film capacitor is a completely grounding potential. Therefore, the phase velocity in the thin-film capacitor part is faster than the phase velocity in the taper part by 9.8/4 = 1.57 times. However, as shown in this embodiment, if the counterelectrode is not a completely grounding potential, forming a part of the closed microstrip line, and its length is closer to 1/4 wavelength, the phase velocity depends on the length of this closed microstrip line. For example, if the length is 1/4 wavelength, such portion is almost open, and the phase velocity in this case is nearly the phase velocity of the alumina substrate. In other words, in this case, this is a compound dielectric having a conductor of equivalent potential between the silicon oxide film and alumina substrate, and the phase velocity is the value when there is a conductor of grounding potential beneath the alumina substrate. In this embodiment, since the thickness of the silicon oxide film is about 1 micron and the thickness of the alumina substrate is about 240 microns, the phase velocity at this time is nearly the phase velocity in the alumina substrate. Accordingly, as in this embodiment, when the length of the microstrip line from the thin-film capacitor in the central part of the taper part to the ground is about 1/4 wavelength, and is shorter in the side end part than the distance to the ground, the phase velocity is closer to that in the silicon oxide in the side end part, and is closer to that on the alumina substrate in the central part. Hence the phase velocity can be set faster in the side end part so that the phase delay in the taper part can be restored. When the length of the microstrip line from the thin-film capacitor till the transistor is set equal to the length of the connecting wire, the phase difference of the electric signals can be compensated at the input part of the transistor. At this time, by setting the electrostatic capacitance of the thin-film capacitor to a value suited to impedance matching, the impedance matching can be achieved at the same time. Meanwhile, the length of the closed microstrip line up to the ground corresponds to the completely shorted state when 0, and the completely open state when equal to the length of 1/4 wavelength, and hence the effect of the embodiment may be attained by properly selecting the length below the 1/4 wavelength. In the case of the output circuit, the procedure is reverse to the case of the input circuit. It is substantially evident that the phase difference of the electric signals caused in the taper part in the absence of thin-film capacitor and closed microstrip line can be similarly compensated. Impedance matching can be considered exactly the same as in the input circuit. Using the GaAs FETs of similar performance with the gate width of about 4 mm and output of about 3 watts, the performance was compared between the case of employing the structure of this embodiment and the case of employing the structure of the second prior art. As a result, in the conventional method, at 14 GHz, the electric power conversion efficiency was 15% and the linear gain was 4 dB, while in this embodiment the power conversion efficiency was 20% and the linear gain was 4.7 dB, and the electric characteristics were markedly enhanced. Embodiment 4 A fourth embodiment is shown in Fig. 6. In Fig. 6, the part numbers and names are the same as in Fig. 4. What is different from the third embodiment is that titanium oxide having a large dielectric constant of 90 is used, in the same way as in the case of the second embodiment, as the dielectric of the thin-film capacitor, and also the shape and dimensions of the closed microstrip line are different. In this case, the dielectric constant of the thin-film capacitor is greater than that of the substrate, and hence the phase velocity in the thin-film capacitor part is slower, or 9.8/90 = 0.33 times that of the taper part. In this case, therefore, contrary to the case of the third embodiment, the length of the close microstrip line is longer in the part closer to the side end of the taper part than in the central part, being closer to 1/4 wavelength. In such structure, the phases of the electric signals in the positions just leaving the thin-film capacitor can be the same in all parts.

Claims: A matching circuit for a high frequency transistor (101), formed on a substrate (102,103) and comprising a main line composed of a microstrip line (104,105), a high-frequency transistor side of the main line shaped in taper (106,107), and a thin-film capacitor part (108,109) made of a dielectric (201) different in the dielectric constant from the substrate, said dielectric being disposed between a portion of the taper part and the ground (112,113) characterised by the length of the thin-film capacitor part in a travelling direction of a high-frequency signal continuously varying across the taper parts (106-109) so that the variation in the phase difference of the high-frequency signal in its various paths through the taper part is compensated at an output position of the thin-film capacitor part. A matching circuit according to claim 1, wherein a dielectric (201) having a dielectric constant smaller than that of the substrate is used as a dielectric of the thin-film capacitor part (108,109) and the length of the thin-film capacitor in the travelling direction of a high-frequency signal is shorter as approaching the central part of the taper part. A matching circuit according to claim 1, wherein a dielectric (201) having a dielectric constant larger than that of the substrate (102,103) is used as a dielectric of the thin-film capacitor part (108,109) and the length of the thin-film capacitor in the travelling direction of the high frequency signal is longer as approaching the central part of the taper part. A matching circuit for a high-frequency transistor (101) formed on a substrate (102,103) and comprising in series a main line composed of a microstrip line (104,105) a high-frequency transistor side of the main line shaped in taper (106,107) a thin-film capacitor (108,109) and a closed microstrip line (112,113) disposed between the taper part and the ground, the dielectric of the capacitor being disposed between a portion of the taper part and the closed microstrip line, characterised by the length of the closed microstrip line to the ground being different at parts of the thin-film capacitor so that the variation of the phase delay of a high-frequency signal in its various paths through the taper part is compensated at an output position of the thin-film capacitor. A matching circuit according to claim 4, wherein a dielectric (201) having a dielectric constant larger than that of the substrate (102,103) is used as a dielectric of the thin-film capacitor (108,109) and the length of the closed microstrip line (112,113) to the ground is 1/4 wavelength or shorter and becomes shorter as approaching the central part of the thin-film capacitor. A matching circuit according to claim 4, wherein a dielectric (201) having a dielectric constant smaller than that of the substrate (102,103) is used as a dielectric of the thin-film capacitor, and the length of the closed microstrip line (112,113) to the ground is 1/4 wavelength or shorter and becomes longer as approaching the central part of the thin-film capacitor.

Inventors: EDA KAZUO, MIWA TETSUJI, TAGUCHI YUTAKA, EDA, KAZUO, MIWA, TETSUJI, TAGUCHI, YUTAKA
Applicants: MATSUSHITA ELECTRIC IND CO LTD, MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
Application year: 1990
Main classification: H01P5
IPC codes: H01P5