NON-MONOCRYSTALLINE SUBSTANCE CONTAINING IRIDIUM, TANTALUM AND ALUMINUM

Abstract: This invention provides a new non-monocrystalline substance containing iridium, tantalum and aluminum each in the following proportion and a member comprising a film of said non-monocrystalline substance provided on a support: 28 at.% ≦αµρ¨ Ir ≦αµρ¨ 90 at.%, 5 at.% ≦αµρ¨ Ta ≦αµρ¨ 65 at.%, 1 at.% ≦αµρ¨ Al 45 at.%.

Description: FIELD OF THE INVENTION The present invention relates to a non-single crystalline material containing Ir, Ta and Al as the essential components which excels in all-around strength characteristics including chemical stability, electrochemical stability, resistance to oxidation, solvent resistance, heat resistance, thermal shock resistance, mechanical durability, etc. The present invention relates also to a member comprising said non-single crystalline material having an excellent adhesion with a substrate. These non-single crystalline material and member provided according to the present invention can be effectively used in various applications. BACKGROUND OF THE INVENTION The known inorganic material which is called non-single crystalline alloy or non-single crystalline metallic in the field of inorganic material is, in general, prepared by solidifying a molten state containing component elements of predetermined amounts in admixture and cooling the resultant at an appropriate cooling rate. And upon its application, it is often molded. Other than this, the inorganic material is sometimes prepared by uniformly mixing powdery component elements and subjecting the resultant to pressure sintering at an appropriate temperature. Further as for the inorganic material, there is an amorphous solid prepared by a molten solid quenching method in which a molten metal is quench-solidified by dropping said molten metal onto a metal plate being maintained at a predetermined temperature while properly controlling the surrounding temperature so as to provide a high cooling rate as a whole or an aggregate prepared by a vacuum evaporation method in which component elements heat-evaporated are deposited on a given substrate in a sufficiently vacuumed vessel. Thus, there are known a variety of non-single crystalline alloys prepared by various method and they are used in various applications. These non-single crystalline alloys are molded in ribbon-like, fine line-like, powdery, film-like, bulk-like, or like other forms upon their application. As a specific example of the above non-single crystalline alloys, Japanese Laid-Open No. 96971/1984 discloses a Ta-Al alloy usable as a material to constitute the heat generating resistor of a liquid jet recording device. This Ta-Al alloy is worth while to have an attention since it may be easily prepared, may easily take an amorphous state, has a high melting point, and provides relatively excellent mechanical characteristics at elevated temperature. However, said Ta-Al alloy is not a satisfactory material to fulfill the conditions required for the materials to constitute the recent various devices especially with respect to resistances against chemical reaction and electrochemical reaction. Now, in the recent various devices, their constituent members respectively made of a certain material are often engaged in severe use environmental conditions such as being repeatedly exposed to chemical or electrochemical reactions, strong impacts, and the like. Thus, it is required for such constituent member to have a durability against such severe use environmental conditions which has all-around strength characteristics including chemical stability, electrochemical stability, resistance to oxidation, solvent resistance, heat resistance, thermal shock resistance, abrasion resistance, mechanical durability, etc. Further, in the case of the device to be used under elevated temperature condition, it is required for the constituent member to have a high heat resistance. Especially in this case, the thermal condition influences to the constituent member complicatedly together with the chemical and electrochemical conditions and the conditions relating to mechanical strength. Because of this, it is required for the constituent member to have a further improved level for the all-around strength characteristics. In addition, in the case where the material constituting the member is exposed to varied temperatures of an extreme difference ranging from elevated temperature to lowered temperature for an extremely short period of time, the foregoing complicated influences become significantly great. Further in addition, upon application purpose, there is such a case that precise and reliable measurement is to be conducted with the use of a given material even under severe environmental conditions. Other than these, in order to protect the main body of an appliance or component, the surface thereof is applied with a given material in a film-like state. In this case, it is required for the coated film to have not only the foregoing all-around strength characteristics but also a high adhesion to the main body to be the substrate. However, any of the known inorganic materials is not sufficient to fulfill the foregoing requirements. In view of the above, there is an increased demand to provide an material which satisfies, at sufficiently high level, all the all-around strength characteristics such as chemical stability, electrochemical stability, resistance to oxidation, solvent resistance, heat resistance, thermal shock resistance, abraison resistance, mechanical durability, etc., is a markedly little variation in the characteristics among the materials obtained, has a long lifetime and can be easily prepared. In EP-A-0 247 262 an anode is disclosed containing a coating of iridium based amorphous metal alloys and the use thereof as halogen electrodes. The iridium based amorphous metal alloy is represented by the general formula Ir i D d E e F f , where D is Ta or Ti, Zr, Nb, Ru, W, Mo and mixtures thereof; E is Al, or C, B, Si, P, Ge, As, N, Sb and mixtures thereof; F is Rh, Pt, Pd and mixtures thereof, i is from about 35 to 96; d is from about 0 to 40 %; e is from about 4 to 40 %; f is from about 0 to 45 %. SUMMARY OF THE INVENTION It is an object of the present invention to provide an inorganic material which satisfies the foregoing various requirements for the materials used for the preparation of various devices. Other object of the present invention is to provide a non-single crystalline material containing iridium (Ir), tantalum (Ta) and aluminum (Al) as the essential components which excels in the all-around strength characteristics including chemical stability, electrochemical stability, resistance to oxidation, solvent resistance, heat resistance, thermal shock resistance, abraison resistance, mechanical durability, etc. and which can be desirably used in the preparation of various devices. A further object of the present invention is to provide a non-single crystalline material containing iridium (Ir), tantalum (Ta) and alauminum (Al) as the essential components which excels in the all-around strength characteristics including chemical stability, electrochemical stability, resistance to oxidation, solvent resistance, heat resistance, thermal shock resistance, abraison resistance, mechanical durability, etc., which excels in adhesion with a substrate and which can be desirably used in the preparation of various devices. The present inventors have made intensive studies on the known Ta-Al alloys in order to provide a novel material capable of complying with the foregoing requirements desired for the constituent materials of the recent various devices. The present inventors have prepared a plurality of materials comprising three elements of iridium (Ir), tantalum (Ta) and aluminum (Al) and made investigation on those materials obtained. As a result, it has been found that of those materials obtained, the non-single crystalline materials containing Ir, Ta and Al respectively at a particular composition rate satisfy , at a sufficiently high level, all the all-around characteristics including chemical stability, electrochemical stability, resistance to oxidation, solvent resistance, heat resistance, thermal shock resistance, abraison resistance, mechanical durability, etc., they can be effectively employed for the preparation of constituent members for various devices without accompaniment of unevenness in the constituent members and these constituent members can be used for a long period of time. The present invention has been accomplished based on these findings. The non-single crystalline material according to the present invention is an amorphous material, a polycrystalline material or a material comprising an amorphous material and a polycrystalline material in a mixed state, which contains three elements of iridium (Ir), tantalum (Ta) and aluminum (Al) at respective composition rates of 28 to 90 atomic percent, 5 to 65 atomic percent and 1 to 45 atomic percent (these materials will be hereinafter referred to as "non-single crystalline Ir-Ta-Al substance" or "Ir-Ta-Al" alloy) and inevitable impurities, the total amount of the components being 100%. The non-single crystalline Ir-Ta-Al substance is a conventionally unknown, novel substance which has been developed through experiments by the present inventors. In particular, the present inventors selected iridium (Ir) in the viewpoint of a material that is high in heat resistance and resistance to oxidation and is chemically stable, selected tantalum (Ta) in the viewpoint of a material that has a mechanical strength and provides oxides which are high in dissolution resisting property to solvents, and selected aluminum (Al) in the viewpoint of a material that is high in workability and adhesion and provides oxides which are high in dissolution resisting property to solvents, and then produced a plurality of non-single crystalline substance samples containing the three elements at predetermined composition rates by sputtering. The individual samples were prepared by forming a film on a single crystalline Si substrate and a Si single crystalline substrate applied with a thermally oxidized 2.5 µm thick SiO₂ film to the surface thereof using a sputtering apparatus (commodity name: sputtering apparatus CFS-8EP, manufactured by Kabushiki Kaisha Tokuda Seisakusho) shown in FIG. 2. Referring to FIG. 2, reference numeral 201 denotes a film forming chamber. Reference numeral 202 denotes a substrate holder disposed in the film forming chamber 201 for holding a substrate 203 thereon. The substrate holder 202 has a heater (not shown) built therein for heating the substrate 203. The substrate holder 202 is supported for upward and downward movement and also for rotation by means of a rotary shaft 217 extending from a drive motor (not shown) installed outside the system. A target holder 205 for holding thereon a target for the formation of a film is provided at a position in the film forming chamber 201 opposing to the substrate 203. Reference numeral 206 denotes an Al target comprising an Al plate placed on the surface of the target holder 205, said Al plate having a purity of higher than 99.9 weight percent. Reference numeral 207 denotes an Ir target comprising an Ir sheet with a purity of higher than 99.9 weight percent placed on the Al target. Likewise, reference numeral 208 denotes a Ta target comprising a Ta sheet with a purity of higher than 99.9 weight percent placed on the Al target. Said Ir target 207 and Ta target 208 each having a predetermined area are disposed individually by a plural number in a predetermined spaced relationship on the surface of the Al target 206 as shown in FIG. 4. The areas and positions of the individual Ir targets 207 and Ta targets 208 are determined in accordance with calibration curves produced in accordance with a result of ascertainment which has been made in advance of how a film which contains desired Ir, Ta and Al at predetermined respective composition rates can be obtained from a relationship of a ratio of areas of the three targets. Reference numeral 218 denotes a protective wall for covering over the side faces of the targets 206, 207 and 208 so that they may not be sputtered by plasma from the side faces thereof. Reference numeral 204 denotes a shutter plate provided for horizontal movement such that it cuts off the space between the substrate 203 and the targets 206, 207 and 208 at a position above the target holder 205. The shutter plate 204 is used in the following manner. In particular, prior to starting film formation, the shutter plate 204 is moved to a position above the target holder 205 on which the targets 206, 207 and 208 are placed, and then inert gas such as argon (Ar) gas is introduced into the inside of the film forming chamber 201 by way of a gas supply pipe 212. Then, an RF power is applied from an RF power source 215 to convert the gas into plasma so that the targets 206, 207 and 208 are sputtered by the plasma thus produced to remove foreign matters from the surfaces of the individual targets. The shutter plate 204 is then moved to another position (not shown) at which it does not interfere with film formation. The RF power source 215 is electrically connected to a surrounding wall of the film forming chamber 201 by way of a conductor 216, and it is electrically connected also to the target holder 205 by way of another conductor 217. Reference numeral 214 denotes a matching box. A mechanism (not shown) for internally circulating cooling water so that the targets 206, 207 and 208 may be maintained at a predetermined temperature during film formation is provided on the target holder 205. The film forming chamber 201 is provided with an exhaust pipe 210 for evacuating the inside of the film forming chamber. The exhaust pipe is communicated with a vacuum pump (not shown) by way of an exhaust valve 211. Reference numeral 202 denotes a gas supply pipe for introducing sputtering gas such as argon gas (Ar gas) or helium gas (He gas) into the film forming chamber 201. Reference numeral 213 denotes a flow rate adjusting valve for the sputtering gas which is provided for the gas supply pipe. Reference numeral 209 denotes an insulating porcelain-clad interposed between the target holder 205 and the bottom wall of the film forming chamber 201 for electrically isolating the target holder 205 from the film forming chamber 201. Reference numeral 219 denotes a vacuum gage provided for the film forming chamber 201. The internal pressure of the film forming chamber 201 is detected automatically by the vacuum gage. While the apparatus shown in FIG. 2 is of the form wherein only one target holder is provided as described above, a plurality of target holders may otherwise be provided. In this case, the target holders are arranged in an equally spaced relationship on concentric circles at locations opposing to the substrate 203 in the film forming chamber 201. Then, individually independent RF power sources are electrically connected to the individual target holders by way of individual matching boxes. In the case of the arrangement described above, since three kinds of targets, that is, an Ir target, a Ta target and an Al target are used, the three target holders are disposed in the film forming chamber 201 as described above, and the targets are individually placed on the respective target holders. In this instance, since the predetermined RF powers can be applied to the individual targets independently of each other, the composition rates of the film forming elements for the film formation can be varied to form a film wherein one or more of the elements of Ir, Ta and Al are varied in the thicknesswise direction. Preparation of the individual samples using the apparatus shown in FIG. 2 was performed under the following film forming conditions, except that each time a sample was to be produced, placement of the Ir targets 207 and the Ta targets 208 on the Al target 206 was performed with reference to calibration curves prepared in advance for a non-single crystalline substance (film) having predetermined respective composition rates of Ir, Ta and Al to be obtained. Substrates placed on the substrate holder 202: Si single crystalline substrate of a 4 inch  size (manufactured by Wacker)(one piece) and Si single crystalline substrate of a 4 inch  size having a SiO₂ film of 2.5 µm in thickness formed thereon (manufactured by Wacker)(three pieces) Substrate temperature: 50°C Base pressure: 12.6 x 10⁻⁴ Pa or less High frequency (RF) power: 1,000 W Sputtering gas and gas pressure: argon gas, 0.4 Pa Film forming time: 12 minutes An electron probe microanalysis was performed to effect a component analysis of some of those of the samples obtained in such a manner as described above which were produced each by forming a film on a substrate with a SiO₂ film using a EPM-810 manufactured by Kabushiki Kaisha Shimazu Seisakusho, and then those samples which were produced each by forming a film on a Si single crystalline substrate were observed with respect to crystallinity by means of an X-ray diffraction meter (commodity name: MXP³) manufactured by Mac Science. The results obtained were collectively shown in FIG. 3. In particular, a case wherein the sample is a polycrystalline substance is indicated by the mark "▴"; another case wherein the sample is a substance comprising a polycrystalline substance and an amorphous substance is indicated by the mark "X"; and a further case wherein the sample is an amorphous substance is indicated by the mark "". Subsequently, using some of those of the remaining samples which were produced each by forming a film on a substrate with a SiO₂ film, a liquid immersion test was conducted for observing a resisting property to an electrochemical reaction and a resisting proper ty to a mechanical shock, and further, using the remaining ones of the samples which were produced each by forming a film on a substrates with a SiO₂ film, a step stress test (SST) was conducted for observing a heat resisting property and a shock resisting property in the air. The foregoing liquid immersion test was conducted by a similar technique as in a "bubble resisting test in low conductivity liquid" which will be hereinafter described, except that as liquid for the immersion, there was used a liquid comprising sodium acetate dissolved by 0.15 weight percent in a solution comprised of 70 weight parts of water and 30 weight parts of diethylene glycol. The foregoing SST was conducted by a technique similar to that of a "step stress test" which will be hereinafter described. The following results were obtained by a synthetic examination of the results obtained in the liquid immersion test and the results obtained in the SST. In particular, it became clear that, as shown by sections of (a), (b) and (c) in FIG. 5, desirable samples having usability are those samples which are in the range of (a) + (b) + (c), and more desirable samples are in the range of (a) + (b), and most desirable samples are in the range of (a). Then, it became clear that the most preferable samples contain a comparatively large amount of polycrystalline substances, and contains a substance comprising a polycrystalline substance and an amorphous substance in a mixed state and an amorphous substance. Subsequently, a composition rate of Ir, Ta and Al was investigated on the samples in the desirable range [(a)+(b)+(c)] described above, and it was found that they contain 28 to 90 atom percent of Ir, 5 to 65 atom percent of Ta and 1 to 45 atom percent of Al. Likewise, as for the samples in the more desirable range [(a)+(b)], it was found that they contain 35 to 85 atom percent of Ir, 5 go 50 atom percent of Ta, and 1 to 45 atom percent of Al. Further, as for the samples in the most desirable range [(a)], it was found that they contain 45 to 85 atom percent of Ir, 5 to 50 atom percent of Ta, and 1 to 45 atom percent of Al. From the results described above, the present inventors ascertained that a non-single crystalline Ir-Ta-Al substance containing Ir, Ta and Al as essential components at the respective composition rates given below excels in chemical stability, electrochemical stability, heat resistance, resistance to thermal shock, resistance to cavitation and resistance to erosion: 28 atom percent ≦ Sr ≦ 90 atom percent, 5 atom percent ≦ Ta ≦ 65 atom percent, and 1 atom percent ≦ Al ≦ 45 atom percent. Further, the present inventors examined this non-single crystalline Ir-Ta-Al substance with respect to various evaluation items, and as a result, the following facts were found. That is, the non-single crystalline Ir-Ta-Al substance markedly excels in all-around strength characteristics including chemical stability, and inevitable impurities, the total amount of the components being 100%. electrochemical stability, resistance to oxidation, solvent resistance, heat resistance, thermal shock resistance, abraison resistance, mechanical durability, etc. The non-single crystalline Ir-Ta-Al substance also excels in adhesion with a substance and a member applied with coating film comprised of this substance can be used in various applications. DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS Accordingly, one aspect of the present invention is to provide a non-single crystalline substance substantially composed of Ir, Ta and Al and containing the Ir, Ta and Al at the following respective composition rates: 28 atom percent ≦ Ir ≦ 90 atom percent, 5 atom percent ≦ Ta ≦ 65 atom percent, and 1 atom percent ≦ A1 ≦ 45 atom percent, and inevitable impurities, the total amount of the components being 100%. Another aspect of the present invention is to provide a non-single crystalline substance substantially composed of Ir, Ta and Al and containing the Ir, Ta and Al at the following respective composition rates: 35 atom percent ≦ Ir ≦ 85 atom percent, 5 atom percent ≦ Ta ≦ 50 atom percent, and atom percent ≦ A1 ≦ 45 atom percent, and inevitable impurities, the total amount of the components being 100%. A further aspect of the present invention is to provide a non-single crystalline substance substantially composed of Ir, Ta and Al and containing the Ir, Ta and Al at the following respective composition rates: 45 atom percent ≦ Ir ≦ 85 atom percent, 5 atom percent ≦ Ta ≦ 50 atom percent, and 1 atom percent ≦ Al ≦ 45 atom percent, and inevitable impurities, the total amount of the components being 100%. In the present invention, while reasons why the specific non-single crystalline Ir-Ta-Al substance described above provides such various remarkable effects as described hereinabove are not clear, it is considered that one of the reasons is that the Ir excelling in heat resisting property, oxidation resisting property and chemical stability prevents occurrence of reaction; the Ta provides a mechanical strength and brings about a dissolution resisting property; and the Al existing together with said elements provides a spreading property to the alloy material, makes the stress optimum and increases the adhesion and roughness. The present inventors have confirmed through experiments that, in the case where a non-single crystalline Ir-Ta-Al substance other than the specific Ir-Ta-Al substances described above (that is, amorphous Ir-Ta-Al alloy, polycrystalline Ir-Ta-Al alloy or mixture of the alloys) is used, there are such problems as below described. That is, the product becomes such that is insufficient with respect to resistance to cavitation, resistance to erosion, chemical and electrochemical stabilities, heat resistance, adhesion, internal stress, and the like and does not provide a sufficient durability in the case where cavitation erosion and thermal shock are caused under elevated temperature atmosphere, acidic atmosphere or erosive atmosphere. For instance, when the Ir is excessively present, removal of a film is often caused. When the Ta and/or Al are excessively present, there is a tendency that oxidation or erosion is significantly caused. The foregoing non-single crystalline Ir-Ta-Al substance to be provided by the present invention excels in all-around strength characteristics including chemical stability, electrochemical stability, resistance to oxidation, solvent resistance, heat resistance, thermal shock resistance, abraison resistance, mechanical durability, etc. and because of this, it can be effectively used in various applications. For instance, it can be effectively used as the coating material to coat the surface of a Langmuir probe which is used under severe environmental conditions of high temperature plasma, sudden pressure changes, etc. Any of the specific non-single crystalline Ir-Ta-Al substances according to the present invention is normally used in the form of a single layer structure. It may be used in the form of a multi-layered structure in some cases. Further, with regard to a layer made of any of the non-single crystalline Ir-Ta-Al substances, it is not always necessary that the composition of the three elements composing the substance, that is, Ir, Ta and Al, be uniform over the entire area of the layer. In particular, one or more of the three elements may be distributed non-uniformly in the thicknesswise direction of the layer so far as the composition rate of the individual elements of Ir, Ta and Al remains within any of the specific ranges described hereinabove. For example, where a single layer structure comprising the non-single crystalline substance of the present invention is formed on a substrate, if the layer comprising the non-single crystalline Ir-Ta-Al substance is made such that the Al is distributed at a relatively high concentration in the layer region adjacent to the substrate, the adhesion between the layer and the substrate is further improved. Further, where a two-layered structure comprising two layers each comprising the non-single crystalline Ir-Ta-Al substance of the present invention being laminated is disposed on a substrate and one of the two layers positioned adjacent to the substrate is made such that the Al is distributed at a relatively high concentration in the layer region adjacent to the substrate as well as in the above case, the adhesion between the layer structure and the substrate is assured desirably similarly as in the above case. Further, while generally the surface or the inside of a layer is sometimes oxidized upon touching with the atmospheric air or during formation thereof, the effects of the substance according to the present invention are not deteriorated by such little oxidation of the surface or the inside of a product. As the related impurity, at least one element selected, for example, from beginning with O by oxidation described above, C, Si, B, Na, Cl and Fe can be cited. The non-single crystalline substance according to the present invention can be prepared, for example, by a DC sputtering method wherein individual materials are piled up simultaneously or alternately, an RF sputtering method, an ion beam sputtering method, a vacuum deposition method, a CVD method, or a film forming method wherein application and baking of paste containing organic metal are conducted, or the like. As the substrate to be used for the formation of a layer comprising the foregoing non-single crystalline Ir-Ta-Al substance on the surface thereof in order to obtain a member, an appropriate one can be selectively used depending upon the kind of a device intended to prepare. In the viewpoint of securing the adhesion between the substrate and the non-single crystalline Ir-Ta-Al substance, one comprising at leaset one kind selected from W, Re, Ta, Mo, Os, Nb, Ir, Hf, Ru, Fe, Ni, Co, Cu and Al, or stainless steel, or brass is desirable. Production Example 1 A Si single crystalline substrate (produced by Wacker) and another Si single crystalline substrate (produced by Wacker) having a SiO₂ film of 2.5 µm thick formed on the surface thereof were set in position as the substrates 203 for sputtering on the substrate holder 202 in the film forming chamber 201 of the foregoing high frequency sputtering apparatus shown in FIG. 2, and using a composite target including a Ta sheet 208 and an Ir sheet 207 of a high purity higher than 99.9 weight percent placed on an Al target 206 made of a material of a similar purity, sputtering was performed under the following conditions to form an alloy layer of about 2,000 Å in thickness. Sputtering Conditions: Target area ratio: Al:Ta:Ir=70:12:18 Target area: 5 inch (127 mm)  High frequency power: 1,000 W Substrate set temperature: 50°C Film forming time: 12 minutes Base pressure: 2.6x10⁻⁴ Pa or less Sputtering gas pressure: 0.4 Pa (argon) Further, for the substrate with a SiO₂ film on which the alloy layer was formed, the composite target was subsequently replaced by another target made only of Al, and an Al layer which was to make electrodes 4 and 5 was formed with a layer thickness of 6,000 Å on the alloy layer in accordance with an ordinary method by sputtering, thereby completing sputtering. After then, phtoresist was formed twice in a predetermined pattern by a photo-lithography technique, and the alloy layer was dry etched first by wet etching of the Al layer and for the second time by ion trimming to form heat generating resistors 3 and electrodes 4 and 5 of such shape as shown in FIG. 1(c). The size of a heat generating portion was 30 pm x 170 µm while the pitch of heat generating portions was 125 µm, and a group wherein 24 such heat generating sections were arranged in a row was formed on the substrate with a SiO₂ film described hereinabove. Subsequently, a SiO₂ film was formed on the surface thereof by sputtering, and the SiO₂ film was patterned, using a photo-lithography technique and reactive ion etching, in such a manner as to cover over portions of 10 µm wide on the opposite sides of the heat generating portions and the electrodes to form a protective layer 6, whereby obtaining a device shown in FIGs. 1(a) and 1(b). The size of the heat acting portion 7 was of 30 µm x 150 µm. The product in such state was subjected to cutting operation for each of the groups to produce a plurality of devices, and an evaluation test which will be hereinafter described was conducted for some of them. (1) Analysis of Film Composition An EPMA (electron probe microanalysis) was conducted for the heat acting portion having no protective film thereon under the following conditions using the measuring instrument described hereinabove to effect a composition analysis. Acceleration voltage 15 kV Probe diameter 10 µm Probe current 10 nA The results of the analysis were as shown in Table 1. It is to be noted that a quantitative analysis was conducted only for the principal components of the targets as raw materials but not for argon which is normally taken into a film by sputtering. Further, it was confirmed by simultaneous employment of a qualitative analysis and a quantitative analysis that other impurity elements of any sample were lower than a detection error (about 0.2 weight percent) of the analyzing apparatus. (2) Measurement of Film Thickness Measurement of film thickness was conducted by step measurement using a contour measuring instrument of the tracer type (alpha-step 200 by TENCOR INSTRUMENTS). The results of the measurement were as shown in Table 1. (3) Measurement of Crystallinity of Film An X-ray diffraction pattern was measured using the measuring instrument described above, and the samples were classified into three types including crystalline ones (C) with which an acute peak by crystal was seen, those (A) which did not provide an acute peak and were considered to be in an amorphous state, and those (M) in which the two are present in a mixed state. The results of the measurement were as shown in Table 1. (4) Measurement of Density of Film A variation in weight of the substrate before and after formation of a film was measured using an ultra-micro balance produced by INABA SEISAKUSHO LTD., and a density was calculated from a value obtained in the measurement and an areas and a thickness of the film. The results were as shown in Table 1. (5) Measurement of Internal Stress of Film A warp was measured for the two elongated glass substrates before and after formation of the film, and an internal stress was found out by a calculation from an amount of such variation and a length, thickness, Young's modulus, Poisson's ratio and film thickness. The results were as shown in Table 1. (6) Bubble Endurance Test in Low Electric Conductivity Liquid The device provided with a protective layer 6 obtained in the above was immersed, at portion at which the protective layer 6 was provided, into a low electric conductivity liquid described below, and a rectangular wave voltage having a width of 7 psec and a frequency of 5 kHz was applied from an external power source across the electrodes 4 and 5 while gradually raising the voltage to obtain a bubble production threshold voltage (V th ) at which the liquid starts bubbling. Liquid Composition Water 70 weight parts Diethylene glycol 30 weight parts Electric conductivity 25 µS/cm Subsequently, a pulse voltage equal to 1.1 times the voltage V th was applied in the liquid to repeat production of bubbles to measure a number of application pulses until each of the 24 heat acting portions 7 was brought into a broken condition, and an average value of them was calculated (this bubble endurance test in liquid will be hereafter called commonly as "liquid immersion test"). The values obtained were shown in Table 1 as relative values (the column "clear" of "liquid immersion test" of Table 1) relative to the reference value provided by an average value of the results of the measurement in the bubble endurance test which was conducted in a low electric conductivity liquid in Comparative Example 7 which will be hereinafter described. It is to be noted that, since the liquid of the composition described above is low in electric conductivity, the influence of an electrochemical reaction is low, and a principal factor of break is caused by thermal shock, cavitation, erosion or the like. A durability to them can be found out by the instant test. (7) Bubble Endurance Test in High Electric Conductivity Liquid Subsequently, a bubble endurance test was conducted in a high electric conductivity liquid described below in the same manner as in the case of (6). In this instance, not only a number of application pulses but also a variation in resistance of the heat generating portion before and after application of a pulse signal were measured. Liquid Composition Water 70 weight parts Diethylene glycol 29.85 weight parts CH₃COONa 0.15 weight parts Electric conductivity 1.0 mS/cm The values of the measurement were calculated as average values in the same manner as in (6) described above, and the values obtained were indicated in Table 1 (the column "black" of "liquid immersion test" of Table 1) as relative values relative to the reference value provided by an average value of the results of the measurement which was obtained in the bubble endurance test in a high electric conductivity liquid in Comparative Example 7 which will be hereinafter described. It is to be noted that the liquid of the composition described above is so high in electric conductivity that electric current flows also in the liquid upon application of a voltage. Therefore, according to the instant test, the situation can be discriminated whether or not an electrochemical reaction provides damage to the heat generating portion in addition to a shock or erosion by a cavitation. Further, the variation in resistance of the heat generating portion makes it possible to estimate a change in the quality of the non-single crystalline substance due to heat or electrochemical reaction. (8) Step Stress Test (SST) A step stress test wherein the pulse voltage was successively increased for a fixed step (6x10⁵ pulses, 2 minutes) while similar pulse width and frequency as in the (6) and (7) were employed was conducted in the air, and a ratio (M) between a break voltage (V break ) and V th found out in the (6) was found out, and a temperature reached by the heat acting face at V break was estimated. The results obtained were shown in Table 1. It is to be noted that, from the results of the test, a heat resisting property and a thermal shock resisting property of a material to-be examined in the air can be discriminated. (9) Total Evaluation A total evaluation was conducted based on the criteria described below, and the results were shown in Table 1. o ○ : The ratio (relative value) of the result of the endurance test by a liquid immersion test in a low electric conductivity liquid: ≧ 7, The ratio (relative value) of the result of the endurance test by a liquid immersion test in a high electric conductivity liquid: ≦ 4, Resistance variation: ≦ 5%, SST M: ≧ 1.7. ○: In case where the value of SST M of the evaluation item in the case of above is ≧ 1.55. Δ: In case where the value of SST M of the evaluation item in the case of above is ≧ 1.50. X: In the case where any one of the result of the liquid immersion test in a high electric conductivity liquid, the resistance variation and the SST M is evaluated as being lower than Δ in the total evaluation. Production Examples 2 to 12 and 14 to 19 Devices were produced in the same manner as in Production Example 1, except that the area ratio of individual raw materials of the sputtering target was changed variously as shown in Table 1. Analysis and evaluation were conducted with each of the thus obtained devices in the same manner as in Production Example 1. The results obtained were in Table 1. Example 13 A device was produced in the same manner as in Production Example 1, except that the film (non-single crystalline substance) obtained in Production Example 12 was heated at 1,000°C for 12 minutes in a nitrogen atmosphere in an infrared ray image furnace to crystallize the same. Analysis and evaluation were conducted with each of the thus obtained device in the same manner as in Production Example 1. The results obtained were indicated in Table 1. Example 20 The sputtering apparatus used in Production Example 1 was modified into a film forming apparatus which has three target holders in a film forming chamber and an RF power can be applied to each of the target holders independently of each other. Further, targets of Al, Ta and Ir each having a purity of higher than 99.9 weight percent were amounted on the three target holders of the apparatus so that the three kinds of metals may be sputtered independently of and simultaneously with each other. With the present apparatus, film formation by multi-dimensional simultaneous sputtering was performed under the conditions described below using substrates similar to those used in Production Example 1. Sputtering conditions Target No. Substance Applied Power (W) 1 Al 500 500 2 Ta 500 1000 3 Ir 500 1000 Target area : Each 5 inches (127 mm)  Substrate temperature : 50°C Film forming time : 6 minutes Base pressure : 2.6 x 10⁻⁴ Pa or less Sputtering gas pressure : 0.4 Pa (Ar) The applied voltages to the Ir target and Ta target were increased continuously as in a linear function with respect to a film formation time. Analysis and evaluation similar to those as in Production Example 1 were conducted with films thus obtained. The results obtained were indicated in Table 1. As for the composition of the film, film formation was conducted separately under the fixed conditions while the initial applied power was made constant or the applied power upon completion was made constant, and quantitative analysis by an EPMA was made in the same manner as in Production Example 1. The results of the analysis were such as follows: in the case where the initial applied voltage was kept fixed: Al:Ta:Ir = 35:26:39 in the case where the applied voltage upon completion was kept fixed; Al:Ta:Ir = 21:32:47 From this, it was presumed that the substrate side region and the surface side region of the formerly obtained film have the compositions of (1) and (2) above, respectively, and the composition from the substrate side region through the surface side region varies continuously from (1) to (2). By varying the composition in the thicknesswise direction in this manner, the adhesion of a film to a substrate can be further improved, and the internal stress is controlled desirably. Example 21 Using the same apparatus as was used in Production Example 20, film formation was performed in the same conditions as therein, except that the applied power was changed in such a manner as described below, and analysis and evaluation similar to those in Production Example 1 were conducted with the devices thus obtained. The results obtained were indicated in Table 1. Applied power conditions Target No. Substance Applied Power (W) 0 to 3 minutes 3 to 6 minutes 1 Al 500 500 2 Ta 500 1000 3 Ir 500 1000 In this instance, a layered film comprising the upper and lower layers was obtained, and the compositions of the upper layer and the lower layer were different from each other. And, as the Al is contained in a comparatively large amount in the layer region adjacent the substrate, the adhesion of the two-layered body to the substrate is assured. Comparative Examples 1 to 6 Devices were produced in the same manner as in Example 1, except that the area ratio of individual raw materials of the sputtering target upon film formation was changed variously as shown in Table 1. Analysis and evaluation were conducted with the thus obtained devices in the same manner as in Production Example 1. The results obtained were indicated in Table 1. Comparative Example 7 A device was produced in the same manner as in Production Example 1, except that an Al target on which a Ta sheet was provided was used as a sputtering target upon film formation, and the area ratio of the raw materials of the sputtering target was changed as indicated in the column of Comparative Example 7 of Table 2. Analysis and evaluation were conducted with the thus obtained device in the same manner as in Production Example 1. The results obtained were indicated in Table 2. It is to be noted that the result of the liquid immersion test in the instant comparative example was used as the reference value for the results of the liquid immersion tests in other examples (production examples and other comparative examples). In particular, as shown in Table 2, the value of the liquid immersion test in the instant comparative example was set to 1 both for the case of using a low electric conductivity liquid and the case of using a high electric conductivity liquid. In the instant comparative example, the result of the liquid immersion test using a low electric conductivity liquid was about 0.7 times the result of the liquid immersion test using a high electric conductivity liquid. Comparative Examples 8 to 11 Devices were produced in the same manner as in Production Example 1, except that an Al target on which a Ta sheet was provided was used as the sputtering target upon film formation and the area ratio of the individual raw materials of the sputtering target was varied as indicated in Table 2. Analysis and evaluation were made with the thus obtained devices in the same manner as in Production Example 1. The results obtained were indicated in Table 2. Comparative Example 12, 13 and 14 Devices were produced in the same manner as in Production Example 1, except that an Al target on which an Ir sheet was provided was used as the sputtering target upon film formation and the area ratio of the individual raw materials of the sputtering target was varied as indicated in Table 3. Analysis and evaluation were made with the thus obtained devices in the same manner as in Example 1. The results obtained were indicated in Table 3. Comparative Example 15 A device was produced in the same manner as in Production Example 1, except that a Ta target was used as the sputtering target upon film formation. Analysis and evaluation were made with the thus obtained device in the same manner as in Production Example 1. The results obtained were indicated in Table 4. Comparative Examples 16 to 21 Devices were produced in the same manner as in Production Example 1, except that a Ta target on which an Ir sheet was provided was used as the sputtering target upon film formation and the area ratio of the individual raw materials of the sputtering target was varied as indicated in Table 4. Analysis and evaluation were made with the thus obtained devices in the same manner as in Production Example 1. The results obtained were indicated in Table 4. [Application Example] In the following, there will be shown an example wherein the Ir-Ta-Al alloy of the present invention was used in a Langmuir probe. The Langmuir probe is an element for measuring the parameters of plasma: plasma potential, electron temperature, ion temperature and plasma density by measuring a probe current i (V-i characteristic) flown upon changing a probe bias voltage V wherein the Langmuir probe is placed within plasma. When this element is used, for instance, in a sputtering film-forming apparatus, there are technical problems that when it is placed within plasma, it receives sputtered ion impacts because of ion sheath in the periphery of the probe especially in the positive bias region to raise the temperature of the element resulting in causing a change in its surface quality and a variation in the V-i characteristic, whereby reducing the reliability of measured data. Because of this, the probe element is commonly made of a high melting point metal such as tangusten. However, even for such element made of tangusten, when it is exposed to reactive materials in a high temperature state in a reduced vacuum region as in the case of sputtering, it is not sufficiently prevented from being changed with the surface quality thereof and it is not sufficiently resistant particularly to oxidation. Considering the situation of the Ir-Ta-Al alloy according to the present invention that it excels in chemical stability, heat resistance and adhesion to a base member, the alloy was used in the preparation of a Langmuir probe. Particularly, there was provided a cylindrical probe body made of tungsuten which is of 0.5 mm in diameter and 5.0 mm in length. A 2000 Å thick film comprising the substance obtained in Production Example 15 was disposed uniformly on the surface of said body by the RF sputtering method. The probe element thus prepared was set to a vacuum chamber of a sputtering apparatus having the following contents. Target: Fe (purity: 99.9 %) 60 mm Sputtering gas: Ar (purity: 99.9 %) Discharge current: 1 A Focusing magnetic field: 500 e Target-substrate distance: 55 mm The position for the probe element to be placed: 27.5 mm apart from the surface of the target in the vertical direction A Si-single crystal substrate of 35 x 35 mm in size and 0.5 mm in thickness was positioned in the side of an anode. After being vacuum evacuated, plasma discharge was maintained with a Ar gas pressure of 2.0 mTorr and an applied voltage of 1000 V, wherein a plasma potential was measured by a conventional method using the above probe element to obtain a value of Vp=+7V. Thereafter, the vacuum chamber was released to atmospheric pressure, and the foregoing procedures of measuring the plasma potential were repeated until the weld time for the probe element became 12 minutes to observe a variation in the measured Vp data. It was found that the variation is within the range of 3 % and thus, the probe element is sufficiently reliable. For comparison purpose, a probe element made only of tungusten was provided and the foregoing procedures of measuring the plasma potential were performed using said probe element in the same manner as in the above. The variation in the measured Vp data was large as much as 20 %. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1(a) is a schematic plan view of the device used for the evaluation of a non-single crystalline substance of the present invention. FIG. 1(b) is a schematic sectional view taken along alternate long and short dash line X-Y of FIG. 1(a). FIG. 1(c) is a schematic plan view of the device wherein a layer comprising the non-single crystalline substance and electrodes are provided. FIG. 2 is a schematic sectional view of an example of a high frequency sputtering apparatus which is used for the preparation of a film comprising a non-single crystalline substance of the present invention or the like. FIG. 3 is a view showing the composition ranges of non-single crystalline substances according to the present invention.

Claims: A non-single crystalline material characterized by containing Ir, Ta and Al at the following respective composition rates: 28 atom percent ≤ Ir ≤ 90 atom percent, 5 atom percent ≤ Ta ≤ 65 atom percent, and 1 atom percent ≤ Al ≤ 45 atom percent, and inevitable impurities, the total amount of the components being 100%. A non-single crystalline material characterized by containing Ir, Ta and Al at the following respective composition rates: 35 atom percent ≤ Ir ≤ 85 atom percent, 5 atom percent ≤ Ta ≤ 50 atom percent, and 1 atom percent ≤ Al ≤ 45 atom percent, and inevitable impurities, the total amount of the components being 100%. A non-single crystalline material characterized by containing Ir, Ta and Al at the following respective composition rates: 45 atom percent ≤ Ir ≤ 85 atom percent, 5 atom percent ≤ Ta ≤ 50 atom percent, and 1 atom percent ≤ Al ≤ 45 atom percent, and inevitable impurities, the total amount of the components being 100%. The non-single crystalline material according to one of the claims 1 to 3 is a polycrystalline material. The non-single crystalline material according to one of the claims 1 to 3 is an amorphous material. The non-single crystalline material according to one of the claims 1 to 3 is one comprising a polycrystalline material and an amorphous material in a mixed state. The non-single crystalline material according to one of the claims 1 to 3 is in a film form. The non-single crystalline material according to claim 7, wherein the states for the elements being distributed in the film are changed in the thicknesswise direction. The non-single crystalline material according to claim 7, wherein the film has multi-layered structure comprising a plurality of layers being stacked. The non-single crystalline material according to claim 7, wherein the thickness of the film is 0.03 µm (300 Å) to 1 µm thick. The non-single crystalline material according to claim 7, wherein the thickness of the film is 0.1 µm to 0.5 µm (1000 Å to 5000 Å)thick. A member characterized by having a substrate and a coat film disposed on said substrate, said coat film being formed of a non-single crystalline material containing Ir, Ta and Al at the following respective composition rates: 28 atom percent ≤ Ir ≤ 90 atom percent, 5 atom percent ≤ Ta ≤ 65 atom percent, and 1 atom percent ≤ Al ≤ 45 atom percent, and inevitable impurities, the total amount of the components being 100%. A member characterized by having a substrate and a coat film disposed on said substrate, said coat film being formed of a non-single crystalline material containing Ir, Ta and Al at the following respective composition rates: 35 atom percent ≤ Ir ≤ 85 atom percent, 5 atom percent ≤ Ta ≤ 50 atom percent, and 1 atom percent ≤ Al ≤ 45 atom percent, and inevitable impurities, the total amount of the components being 100%. A member characterized by having a substrate and a coat film disposed on said substrate, said coat film being formed of a non-single crystalline material containing Ir, Ta and Al at the following respective composition rates: 45 atom percent ≤ Ir ≤ 85 atom percent, 5 atom percent ≤ Ta ≤ 50 atom percent, and 1 atom percent ≤ Al ≤ 45 atom percent, and inevitable impurities, the total amount of the components being 100%. The member according to any of the claims 12 to 14, wherein the non-single crystalline material is a polycrystalline material. The member according to any of the claims 12 to 14, wherein the non-single crystalline material is an amorphous material. The member according to any of the claims 12 to 14, wherein the non-single crystalline material is one which contains a polycrystalline material and an amorphous material in a mixed state. The member according to any of the claims 12 to 14, wherein the states for the elements being distributed in the film are changed in the thicknesswise direction. The member according to any of the claims 12 to 14, wherein the film has a multi-layered structure comprising a plurality of layers being stacked. The member according to any of the claims 12 to 14, wherein the film is 0.03 µm (300 Å) to 1 µm thick. The member according to any of the claims 12 to 14, wherein the film is 0.1 µm to 0.5 µm (1000 Å to 5000 Å) thick. The member according to any of the claims 12 to 14, wherein the substrate is constituted by at least one kind of material selected from the group consisting of W, Re, Ta, Mo, Os, Nb, Ir, Hf, Ru, Fe, Ni, Co, Cu and Al. The member according to any of the claims 12 to 14, wherein the substrate is constituted by a stainless steel. The member according to any of the claims 12 to 14, wherein the substrate is constituted by a brass.

Inventors: HASEGAWA KENJI, KIMURA ISAO, SHIOZAKI ATUSHI, TOUMA KOUICHI, HASEGAWA, KENJI, KIMURA, ISAO, SHIOZAKI, ATUSHI, TOUMA, KOUICHI
Applicants: CANON KK, CANON KABUSHIKI KAISHA
Application year: 1990
Main classification: C22C5
IPC codes: C22C27, B41J2, C22C5, C22C30