A semiconductor laser

Abstract: A semiconductor laser for laser oscillation at short wavelength visible light comprises a substrate (11) for crystal growth having a striped channel (17), an active layer (14) for laser oscillation, and a cladding layer (19) containing Mg which is in contact with the side of said active layer (14) which faces the striped channel (17) in the substrate (11). A filler layer (18) is disposed between the substrate (11) and the cladding layer (19) so as to fill the striped channel (17) in the substrate (11), the Mg content of the filler layer (18) being less than that of the cladding layer (19).

Description: This invention relates to a semiconductor laser having a double heterostructure on a striped channel substrate. Semiconductor lasers for laser oscillation at a short wave length of visible light are known. In the preparation of the inner stripe geometric structure of a semiconductor laser for laser oscillation at a short wavelength, the first cladding layer is used to fill the channel in the substrate, resulting in certain drawbacks. Figure 1 of the accompanying drawings shows a VSIS (V-shaped channel substrate inner stripe) semiconductor laser with a plane active layer, which was disclosed in TGED 81-42, 31 (1981-July) IECE Japan, comprising a p-GaAs substrate 11, an N-GaAs current blocking layer 12, a p-Ga 1-y Al y As cladding layer 13, a p-Ga 1-x Al x As active layer 14, an n-Ga 1-y As y As cladding layer 15 and an n-GaAs cap layer 16. The V-shaped channel 17 serves as an electroconductive region. In order that this VSIS laser having an inner stripe geometric structure attains laser oscillation at a wavelength of 750 nm or less, the mole ratio y of AlAs to GaAs in the cladding layers 13 and 15 must be 0.6 or more. When the mole ratio is less than 0.6, carriers leak out of the active layer 14 to the cladding layers 13 and 15 resulting in an increase in the threshold current and a decrease in the dependency of the threshold current upon temperature. Especially, extensive leakage of carriers (i.e., electrons) from the active layer 14 to the p-cladding layer 13 tends to take place, so that a considerably high barrier must be set to prevent such leakage of electrons to the p-cladding layer 13. The height of the barrier depends not only upon the mole-ratio y of AlAs to GaAs but also the positive hole concentration of the p-cladding layer 13. For example, when the positive hole concentration is 5 x 10¹⁷ cm⁻³, the barrier must be raised to approximately 50 meV (i.e. a 20 percent raise of the original barrier). This means that the positive hole concentration of the p-cladding layer 13 must be at least 1 x 10¹⁸ cm⁻³. In order to obtain the carrier (positive hole) concentration at 1 x 10¹⁸ cm⁻³ or more in the p-Ga 1-y Al y As cladding layer wherein y is greater than 0.6, Mg is preferably used as a p-impurity since the addition of Mg in a concentration of 0.3 atomic percent or more to the p-cladding layer attains a carrier (positive hole) concentration of 1 x 10¹⁸ cm⁻³ or more. However, when Mg is doped to the Ga 1-y Al y As to a great extent, the growth rate of the crystalline layer decreases because Mg functions to reduce the diffusion coefficient of As in the Ga solution. Especially, when Mg in a concentration of 0.3 atomic percent is added to Ga 1-y Al y As under the condition of y>0.6, the growth rate of the Ga 1-y Al y As slows significantly, so that, as shown in Figure 2, the channel 17 will be insufficiently filled with the p-cladding layer 13, resulting in an active 14 layer having a concaved surface which induces the high-order transverse mode. Even though the growth period of the p-cladding layer 13 is extended during the growth process, the formation of an active layer 14 having a plane surface is quite difficult. Even if the plane surface of the active layer 14 results from the extension of the growth period, the portion of the p-cladding layer 13 on the outside of the channel 17 becomes too thick to serve as a waveguide. As mentioned above, the addition of Mg in the selected concentration to the p-cladding Ga 1-y Al y As (y>0.6) layer in a conventional manner to obtain a positive hole concentration of at least 1 x 10¹⁸ cm⁻³ in the p-cladding layer, cannot attain a good yield of semiconductor lasers having excellent characteristics and good reproducibility of the characteristics of the lasers. According to the present invention, there is provided a semiconductor laser having a double heterostructure formed by III-V compound semi-conductors, comprising: a substrate having a striped channel; and an active layer for laser oscillation disposed above said substrate; a cladding layer, formed by III-V compounds comprising Ga and As, which is in contact with the lower surface of said active layer at least in the region which faces said striped channel, said active layer and said cladding layer constituting one of the heterostructures; characterised by the cladding layer (19) being doped with at least 0,3 atomic percent of Mg and by comprising Ga and As, disposed between the substrate and the cladding,layer to fill the channel in said substrate, the Mg content of said filler layer being 0.2 atomic percent or less. Preferably the active layer and cladding layer are formed so as to be substantially planar. In one embodiment of the invention, the semiconductor laser further comprises a current blocking layer disposed on said substrate beneath the filler layer and through which the striped channel extends. Thus, the invention described herein makes possible the object providing a novel and useful semiconductor laser for laser oscillation at short wavelength of visible light which has a cladding layer containing a sufficient carrier concentration thereby attaining an excellent yield and an excellent reproducibility of characteristics. For a better understanding of the invention and to show how the same may be carried into effect, reference will now be made, by way of example, to the accompanying drawings in which: FIGURE 1 is a front sectional view showing the fundamental structure of a VSIS laser; FIGURE 2 is a front sectional view of a VSIS laser wherein the active layer has a concaved surface; and FIGURE 3 is a front sectional view of a semiconductor laser for laser oscillation at a short wavelength of visible light according to this invention. The semiconductor laser for laser oscillation at a short wavelength of visible light of this invention can be produced as follows: First, the channel in the substrate for the crystal growth is filled with a filler layer containing Mg in a low concentration (e.g. 0.2 atomic percent or less) until the surface of the filler layer forms a plane. Then, on the filler layer, a cladding layer, which has a mole ratio of 0.6 or more of AlAs to GaAs and contains Mg in a higher concentration (e.g. 0.3 atomic percent or more) than the concentration of Mg in the filler layer, is grown with a selected carrier concentration and a selected thickness. On the cladding layer, a plane active layer is grown resulting in a semiconductor laser for laser oscillation at a short wavelength having a multiple-layered crystal structure. Since the channel is filled, first, with a filler layer containing Mg in a low concentration, the growth rate of the filler layer does not slow down so that the diffusion coefficient of As in the crystal growth solution can be maintained at a certain level and the channel is quickly filled therewith, resulting in a filler layer, the surface of which forms a plane in a considerably short period of time. Since the amount of Mg in the growth solution is small, the channel tends to undergo a slight meltback thereby deforming slightly, but such a slight deformation of the channel has less effect upon laser oscillation at a short wavelength. As a cladding layer containing a large amount of Mg and having a sufficient carrier concentration is grown on the filler layer followed by growing a plane active layer on the cladding layer, leakage of carriers from the active layer to the cladding layer can be prevented, resulting in a double heterostructure which can attain laser oscillation at a short wavelength. The resulting semiconductor laser has a threshold current level and an excellent reproducibility of the temperature characteristic for laser oscillation. Moreover, this process can result in easy mass production on a commercial basis. The following non-limitative Example further illustrates the invention. EXAMPLE Figure 3 shows a VSIS semiconductor laser for laser oscillation at a short wavelength of 700 mm or less of visible light, which was produced using a liquid phase epitaxy technique of a sliding type as follows: On the (100) face of a Zn-doped p-GaAs substrate (p=1 x 10¹⁹ cm³)11, a Te-doped n-GaAs current blocking layer (n=3 x 10¹⁸ cm⁻³)12 was grown with a thickness of 0.6 µm by liquid phase epitaxy, followed by etching to form a V-shaped stripe channel 17 having a width of 4 µm in the (110) direction. Due to the formation of the V-shaped channel 17, the corresponding portion of the current blocking layer 12 was removed from the substrate 11, resulting in an electric current path therein which is striped in structure. On the substrate 11 having the channel 17, a p-Ga 1-z Al z As filler layer (z=0.7; Mg contents of 0.06 atomic percent)18, a p-Ga 1-y Al y As cladding layer (y=0.8; Mg contents of 1.0 atomic percent)19, a p-Ga 1-x Al x As active layer (x=0.3; Mg contents of 0.03 atomic percent)14, an n-Ga 1-y Al y As cladding layer (y=0.8, Te contents of 0.001 atomic percent)15, and an n-GaAs cap layer (Te contents of 0.003 atomic percent)16 were successively grown by liquid phase epitaxy to form a multiple-layered crystal for laser oscillation having a double heterostructure. The mole ratio of AlAs to GaAs in each of the crystal layers meets the following requirements: 0<x<z≦y, and 0.6≦z≦y<1. Since the Mg contents in the filler layer 18 was small, the growth rate of the filler layer 18 was so high that the channel 17 could be completely filled with the filler layer 18 in approximately 60 seconds. The surface of the resulting filler layer 18 was plane. Both shoulder portions of the channel 17 underwent a slight meltback. Each of the portions of the filler layer 18 on both sides of the channel 17 had a thickness of 0.1 µm. The p-cladding layer 19 was formed with a thickness of 0.1 µm, the p-active layer with a thickness of 0.08 µm, the n-cladding layer with a thickness of 1 µm, and the n-cap layer 16 with a thickness of 1 µm. Due to a large doping amount of Mg, the carrier concentration in the p-cladding layer 19 exhibited 3 x 10¹⁸ cm⁻³ and the barrier to electrons from the active layer 14 was as high as 230 meV, thereby attaining a sufficient confinement of electrons in the active layer 14 at the heterojunction. Then, a p-electrode and an n-electrode were formed on the substrate 11 and the cap layer 16, respectively, resulting in the desired VSIS semiconductor laser. When an electric current is injected into the semiconductor laser, the current flows through the striped channel 17 serving as an electroconductive region and laser operation starts in the corresponding portion of the active layer 14. The channel 17 acts as an inner striped structure focusing an electric current thereon. The VSIS semiconductor laser in this example attained laser oscillation at a wavelength in the range from 680 to 700 nm at a threshold current of as small as 70 mA on the average. The dependency of the laser of the threshold current upon the temperature was as small as 0.6 mA/°C. Most of the semiconductor laser units in a wafer attained laser oscillation at a threshold current of 100 mA or less and were superior in the reproducibility of laser oscillation. It is known that some of the conventional semiconductor lasers attain continuous wave oscillation at a wavelength of 683 nm which is the shortest oscillation wavelength of known semiconductor lasers (Appl. Phys-Lett. vol. 41, p.796, 1982). In the VSIS semiconductor laser of this Example, although the composition ratio of the mixed crystal is 0.6 or more which is extremely great, the positive hole concentration is as high as around 1 x 10¹⁸ cm⁻³ so that the threshold current level is reduced and reproducibility of the device characteristics can be improved. The VSIS semiconductor laser of this invention is not limited to the GaAs-GaAlAs system, but it can be applied to a material such as, for example, an InP-InGaAsP system or a GaAsSb-AlGaAsSb system.

Claims: A semiconductor laser having a double heterostructure formed by III-V compound semiconductors, comprising: a substrate (11) having a striped channel (17); and an active layer (14) for laser oscillation disposed above said substrate (11); a cladding layer (19), formed by III-V compounds comprising Ga and As, which is in contact with the lower surface of said active layer (14) at least in the region which faces said striped channel (17), said active layer (14) and said cladding layer (19) constituting one of the heterostructures; characterised by the cladding layer (19) being doped with at least 0,3 atomic percent of Mg and by a filler layer (18), formed by III-V compounds comprising Ga and As, disposed between the substrate (11) and the cladding layer (19) to fill the channel (17) in said substrate (11), the Mg content of said filler layer (18) being 0.2 atomic percent or less. A semiconductor laser as claimed in claim 1, wherein said active layer and said cladding layer are formed so as to be substantially planar. A semiconductor laser as claimed in claim 1 or 2 and further comprising a current blocking layer disposed on said substrate beneath the filler layer and through which the striped channel extends.

Inventors: HAYASHI HIROSHI, MORIMOTO TAIJI, YAMAMOTO SABURO, YANO SEIKI, HAYASHI, HIROSHI, MORIMOTO, TAIJI, YAMAMOTO, SABURO, YANO, SEIKI
Applicants: SHARP KK, SHARP KABUSHIKI KAISHA
Application year: 1990
Main classification: H01S3
IPC codes: H01S5