Method of stripping organic material

Abstract: In a method of ashing an organic film on a supporting substrate (8), mounted in a working chamber (6), a gaseous mixture containing oxygen and a halogen is subjected to an ionization process in a plasma chamber (4) from which neutral active species of a resulting plasma can pass into the working chamber (6). Water vapour is introduced into the working chamber at a rate such that the working chamber receives at least one mole of water vapour for every two moles of free halogen atoms received therein from the plasma chamber, thereby to prevent such free halogen atoms from contacting the organic film. Such a method may be used, for example, to remove an organic resist from a semiconductor wafer during the fabrication of semiconductor devices, and can enable the resist to be removed at an acceptably high rate at a desirably low temperature, without causing significant contamination or etching of the underlying wafer.

Description: The present invention relates to methods of stripping organic material, for example, to remove a resist such as a photoresist, X-ray resist, or electron beam resist, used in the production of semiconductor devices, liquid crystal devices and plasma displays. In the production of semiconductor devices, usually a photoresist (hereinafter abbreviated as resist) is used as a mask when etching a wafer, and as the resist becomes unnecessary after the etching treatment, it must be removed. The removal methods include the wet treatment system in which a resist stripping solution is used, and the dry treatment system of oxydizing or ashing the resist in an active species of oxygen atoms or an oxygen plasma. Currently, dry treatments, which comprise simple ashing steps but can also treat the resist carbonized in the process of ion injection, are widely used, and among these treatments, the downstream ashing method, which causes little or no damage to the wafer, is most widely used. In one form of dry treatment utilizing the downstream ashing method, a gas composed mainly of oxygen gas is used for the ashing. Nevertheless, since the ashing rate (i.e., amount of organic material per unit of time) is low, the wafer must be heated to about 200°C or higher to obtain a satisfactory ashing rate. When the wafer is thus heated, however, a minute amount of heavy metals and alkaline metals contained in the resist is introduced into the wafer, whereby problems relating to contamination of the wafer can arise. Accordingly, the development of a technique by which a satisfactory ashing rate can be obtained at a low temperature, at which contamination of the wafer does not occur, is desirable. An apparatus for carrying out a downstream ashing method is shown in Fig. 4. Such apparatus is described in more detail in EP-A-0237078, for example. As shown in Fig. 4, a vacuum reaction chamber 6 is connected to the vacuum pump P, the reaction gases are fed through the gas introducing inlet 3 into the plasma generation chamber 4 provided in reaction chamber 6, and are then formed into a plasma by, for example, microwaves at a frequency of, for example, 2.45 GHz, transmitted through a microwave transmission window 2 by a waveguide 1. Among the ions, electrons, and active species formed by plasma formation, the ions and the electrons are shielded by the earthed shower head 5, and residual (neutral) active species pass through the shower head 5 and flow down toward the wafer 8 on the stage 7. The active species come into contact with the wafer 8 and remove the resist film, comprising an organic material (not shown) coated on the wafer 8, by ashing. In the downstream ashing method of Fig. 4, a gas composed mainly of oxygen is introduced, as the gas for ashing, through the gas introducing inlet 3, formed into a plasma, and subjected to a downstream to bring the active species of oxygen atoms into contact with the wafer 8. According to this method, since the activation energy during the ashing is as high as 0.52 eV, the influence on the ashing rate of the temperature (i.e., temperature dependency) is great, and thus the reproducibility and controllability of the ashing are poor. Further, when the stage temperature is 180°C, the ashing rate is as low as 0.2 µm/min., and therefore, to obtaining the minimum limit of an about 0.5 µm/min. of ashing rate required for practical application, the wafer 8 must be heated to about 200°C or higher, and accordingly, the contamination problems of the wafer 8 arises. To enable ashing to be carried out at a lower temperature than that used in the above-described downstream method, the following methods may be used: (a) Downstream ashing method using oxygen (O₂) and water (H₂O): This method may be carried out using the apparatus of Fig. 4, by introducing O₂ and H₂O through the gas introducing inlet 3 to form the same into a plasma, which is then subjected to a downstream to bring active species of oxygen atoms formed from oxygen, oxygen atoms, and hydrogen atoms and OH formed from H₂O, into contact with the wafer 8. In this method, the relationship between the ratio of H₂O to the total amount of the gas mixture of O₂ and H₂O is shown in Fig. 6. It should be noted that the stage temperature is 180°C, and the flow rate of the gas mixture of O₂ and H₂O is 1 liter/min. As seen from the Fig. 6, when the ratio of H₂O is increased, the ashing rate reaches a maximum value of 0.35 µm/min., which is about 2-fold that of the ashing method using a gas composed mainly of oxygen, when the content of H₂O is 30% to 40%. Even when the ratio of H₂O is further increased, the ashing rate is not substantially lowered. This is considered to be because the oxygen atoms formed from H₂O and other active species participate in the ashing, together with the oxygen atoms formed from oxygen. Also, the activation energy is less, at 0.39 eV, compared with the ashing method using a gas composed mainly of oxygen. This is considered to be due to a lowering of the activation energy by OH formed primarily from H₂O. As the result, in addition to enabling ashing at a temperature lower than that used in the ashing method using a gas composed mainly of oxygen, the temperature dependency is reduced, and thus the reproducibility and controllability are improved. To obtain a practical ashing rate, however, the wafer 8 must be heated to about 200°C or higher, and thus the contamination problems of the wafer still remains. It is found that when using a gas composed mainly of oxygen, a satisfactory ashing rate can be obtained at a low temperature by an addition of a fluorine gas, as described below: (b) Downstream ashing method using a gas containing oxygen and a halogen: In this method of ashing an organic film on a supporting substrate, mounted in a working chamber, a gaseous mixture containing oxygen and a halogen is subjected to ionization in a plasma chamber from which neutral active species of a resulting plasma can pass into the said working chamber so that neutral active species of oxygen from the plasma can ash the said organic film, the halogen serving to promote dissociation of the oxygen. It is found in use of the Fig. 4 apparatus that an ashing rate of 1 µm/min. or higher, which is about 5-fold higher than that of the method using a gas composed mainly of oxygen, can be obtained when about 10% to 15% of a gas containing a small amount of halogen, for example, carbon tetrafluoride (CF₄) in oxygen, is added to the plasma. This is because the gas containing a halogen promotes the dissociation of oxygen into oxygen atoms, when the gas containing oxygen and a halogen is formed into a plasma. Further, when even a small amount of a gas containing fluorine, as a halogen, is added, and the active species of the fluorine come into contact with the wafer 8, the activation energy during ashing is remarkably lowered to about 0.05 eV, compared with the method using only oxygen (V. Vukanovic et al., J. vac. Sci. Technol., B6 (1), Jan/Feb 1988 pp. 66, J.M. Cook and Brent W. Benson, J. Electrochem. Soc. Vol., 130, No. 12, December, 1983, pp. 2459) In this method, the active species of oxygen atoms are increased, to improve the ashing rate, and at the same time, ashing at room temperature is possible due to a lowering of the activation energy by the action of fluorine, and further, an additional advantage is gained in that the temperature dependency is greatly reduced. Nevertheless, when the fluorine atoms reach the SiO₂ surface, a drawback arises in that the substrate layer of, for example, SiO₂, may be etched during the ashing process. A further method, which can provide a satisfactory ashing rate even at room temperature, performs ashing by using a gas containing mainly fluorine, as described below: (c) Downstream ashing method by addition of water (H₂O) during downstream of nitrogen trifluoride (NF₃): The method may be carried out in a modified downstream ashing apparatus such as that of Figure 5, which is an improved form of the apparatus of Fig. 4. This method comprises injecting NF₃ through the gas introducing inlet 3 to form a plasma, and then subjecting the active species of fluorine atoms to a downstream through the shower plate 5. During the downstream from the addition inlet 9, H₂O is added in an amount smaller than the amount of NF₃ injected, whereby the chemical reaction with fluorine and H₂O, as shown below, occurs 2 F + H₂O → 2HF + O to generate the oxygen atoms necessary for ashing. Also, residual fluorine atoms which have not undergone the chemical reaction withdraw H from the C-H bond on the resist surface, thereby substituting for the H (H. Okano et al. The Electrochem. Soc. Spring Meeting, Atlanta, May 15 - 20, 1988). According to this method, the ashing rate is improved by the oxygen atoms formed by the chemical reaction between the H₂O and fluorine atoms, and the residual fluorine atoms, which have not undergone the chemical reaction. Further, the activation energy is lowered by a substitution of H from the C-H bond on the resist surface with fluorine atom, and accordingly, in addition to enabling ashing at room temperature, an advantage is gained in that the temperature dependency is greatly reduced. Nevertheless, because fluorine atoms reach the surface of the wafer 8, the problem of an etching of the substrate layer such as SiO₂ arises, and further, because oxygen atoms are obtained by an exothermic reaction between fluorine atoms and H₂O, the wafer surface is heated by excess heat radiated therefrom, whereby the contamination problems of the wafer 8 with, for example, heavy metals, arises. In the first method described above, in which a gas composed mainly of oxygen is used, and in the method (a) (downstream ashing method with oxygen and water), the wafer temperature must be raised to 200°C or higher, to obtain a practical ashing rate, and thus the problem of wafer contamination can arise. In the methods using a halogen-containing gas, namely (b) the method using a gas containing oxygen and a halogen, and (c) the method of adding water during the downstream of nitrogen trifluoride (NF₃), because fluorine, which is a gas containing a halogen, is used to obtain a practical ashing rate even at room temperature, a problem can arise in that the substrate layer of, for example, SiO₂, is etched. Further, in the downstream ashing method of (c), because the chemical reaction between water and fluorine atoms is an exothermic reaction, and therefore, the wafer surface is excessively heated, the above-mentioned contamination problems of the wafer can arise. Accordingly, the above-described methods may not provide a satisfactory ashing rate at low temperature without etching the substrate layer, and without generating a contamination of the wafer. Recently, the present inventors briefly reported a possibility of a downstream ashing method using O₂ , CF₄ , and H₂O as an ashing gas in Extended Abstracts of the 49 th Autumn Meetings, 1988; The Japan Society of Applied Physics page 553 (October, 1988). This method is disclosed in U.S. Patent Application Serial No. 361178 filed June 5, 1989. It is therefore desirable to provide a method of stripping an organic material by which the substrate layer (e.g. silicon dioxide, silicon nitride) is not etched, a satisfactory ashing rate at a desirably low temperature is obtained, and the semiconductor elements or other devices concerned are not unacceptably damaged. According to the present invention there is provided a process of ashing an organic film on a supporting substrate, mounted in a working chamber, in which process a gaseous mixture containing oxygen and a halogen is subjected to ionization in a plasma chamber from which neutral active species of a resulting plasma can pass into the said working chamber so that neutral active species of oxygen from the plasma can ash the said organic film, the halogen serving to promote dissociation of the oxygen; characterised in that water vapour is introduced into the said working chamber at a rate such that the working chamber receives at least one mole of water vapour for every two moles of free halogen atoms received therein from the plasma chamber, thereby to prevent such free halogen atoms from contacting the said organic film. Incidentally, EP-A-0345757, which is a document falling within the state of the art only by virtue of EPC Article 54(3), discloses a downstream ashing process in which oxygen, water vapour and CF₄ are formed into a plasma in the plasma chamber. In the described process it is considered that the hydrogen atoms from the water vapour molecules combine with the halogen atoms with the result that the undesirable etching action of the halogen atoms on the substrate or ground layer is suppressed. There is no indication in this document, however, that the water vapour should be added to the working chamber (as in the present invention) rather than to the plasma chamber. Reference will now be made, by way of example, to the accompanying drawings, wherein: Figure 1 is a graph showing the relationship between the added amount of water and the SiO₂ etching rate in a process embodying the present invention; Fig. 2 is a graph showing the relationship between the added amount of water relative to the temperature of the wafer in a process embodying the present invention; Fig. 3 is a graph showing the relationship between the added amount of water vapor and the activation energy in a process embodying the present invention; Fig. 4 is an illustration showing a downstream ashing apparatus; Fig. 5 is an illustration showing a further downstream ashing apparatus; and, Fig. 6 is a graph showing the relationship between the added amount of water and the ashing rate of the resist in in a previously-considered downstream ashing method using oxygen and water. A process for ashing an organic material embodying the present invention is described below. By forming gases, including a gas containing oxygen and a gas containing a small amount of a halogen, into plasma in the plasma chamber 4 (see Fig. 5), the gas containing the halogen promotes dissociation of oxygen into free oxygen atoms, to increase the amount of free oxygen atoms. Examples of oxygen-containing gas are oxygen; air, and a mixture of oxygen with an inert gas, CO₂ and /or N₂. Examples of the halogen-containing gas are F₂, Cl₂, Br₂, HF, CF₄, NF₃, C₂F₆, C₃F₈, CHF₃, SF₆, CCl₄, ClF₃ , CCl₂F₂, C₂ClF₅, C₂Cl₂F₄, CClF₃ and Hbr, CBrF₃, and xenon fluoride. The use of a fluorine-containing gas is preferable. The molar ratio of the halogen-containing gas/(the halogen-containing gas + the oxygen-containing gas) is preferably 0.05:1 to 0.3:1, more preferably 0.1:1 to 0.25:1. When the active species in the gas formed into plasma are supplied to the vacuum reaction chamber 6, and water vapor is added in an amount of at least one mole, preferably 1.2 to 2.4 moles, for every 2 moles of the dissociated halogen atom (i.e., active species), during the course of the downward flow of the active species, the following chemical reaction occurs: 2 X + H₂O → 2 HX + O. By utilizing this chemical reaction, the active species of halogen formed by the halogen-containing gas, which is utilized to promote a dissociation of oxygen, are substantially completely removed, and therefore, the substrate layer (e.g., SiO₂, SiN) is not significantly etched. Also, a part of the added water vapor is separated into oxygen atoms, hydrogen atoms, and OH by a secondary reaction with the active species in the downstream, to thereby increase the active species, and as a result, the amount of oxygen atoms and other active species participating in the ashing is increased, and thus the ashing rate is improved. Further, when the active species come into contact with the organic material, to effect ashing, the activation energy is lowered by the OH generated by the secondary reaction, whereby ashing at a lower temperature becomes possible, and further, the temperature dependency is reduced to thereby improve the reproducibility and controllability. Although the chemical reaction between water and atoms of a halogen is an exothermic reaction, only a small amount of the gas containing a halogen need be used, because it is utilized for the dissociation of oxygen, whereby the amount of heat generated is reduced to an extent such that it does not affect the wafer. The water vapor can be introduced into the reaction chamber by evacuating the content of a water vessel containing water. The water vessel can be optionally heated by a heater (e.g. an electric heater). The water vapor can also be introduced into the reaction chamber by bubbling the water in the water vessel with an inert carrier gas (e.g., N₂, O₂, H₂, Ar, He). Examples:- The above-discussed process for ashing organic material will now be illustrated by reference to Examples which utilize the downstream ashing process for the ashing of a resist coated on the surface of a wafer. In these Examples (see Fig. 5), as the substrate of the sample to be ashed, a silicon wafer 8 having a diameter of 4 inches (about 10 cm) was used, a substrate layer of SiO₂ is formed on the surface of the wafer 8 by the thermal oxidation method, and a resist of OFPR 800 (i.e., cresol-novolak resin type positive photoresist, a product of Tokyo Ohka K.K.), was then coated thereon by the spin coating method. The ashing process was carried out in the apparatus of Fig. 5, which has a plurality of water vapor inlets 9 capable of supplying water to be uniformly added to the reaction chamber 6, and the amounts of water supplied through the water vapor inlets 9 can be controlled. The other arrangements are similar to those as shown in Fig. 4. The ashing conditions when performing ashing by using the apparatus of Fig. 5 are described below. The pressure in the reaction vessel 6 is maintained at usually 0.1 to 3 Torr (1 Torr = 133.3 Pa), typically about 0.8 Torr, and a microwave having a frequency of, for example, 2.45 GHz generated from a microwave generating device 11 is transmitted by a waveguide 1. A radio frequency can also be used instread of the microwave. As the gases for the ashing, for example, oxygen and a small amount of CF₄, introduced through the gas introducing inlet 3 from the bombs 12 and 13 through a mass flow controller 14, are used, and water in a saturated vapor preessure state is supplied through the water vapor inlet 9. The total amount of oxygen, CF₄, and water at this time is controlled to one liter/min. The water vapor can be introduced by evacuating a water vessel 15 containing water 16 via a mass flow controller 14 or by bubbling an inert gas (e.g., N₂) from a gas bomb or cylinder 18 via a mass flow controller 14. The water vessel 15 can be appropriately heated by a heater 17. In this Example, to facilitate the comparison between measured values, the gases formed into a plasma are given a constant ratio of an amount of CF₄ of 15% relative to the amount of a gas mixture of the oxygen and CF₄. Under the operating conditions of the Figure 5 apparatus and using the sample as described above, the following measurement was performed. First, the change in the SiO₂ etching rate was determined when the added amount of water was varied from 0 to 30%. At this time, a sample having SiO₂ formed on the whole surface of the wafer 8 as described above was used. The sample was mounted on a stage 7 having a temperature of 150°C, ashing was performed for 10 minutes, a measurement was conducted after ashing by a known esoprimetric method, and the SiO₂ etching rate was obtained from the result of that measurement. The minimum limit of this measurement method is 5 Å. The results are shown in Fig. 1. In Fig. 1, the axis of the ordinate depicts the SiO₂ etching rate, and the axis of the abscissa depicts the ratio of water relative to the total amount of oxygen, CF₄, and water. When water was not added, the SiO₂ was etched at an etching rate of about 230 Å. As the added amount of water was increased, the etching rate was gradually lowered, and no etching of the SiO₂ occurred when the added amount of water was more than about 10%. From this result, it can be seen that, of the reduced active species, only the fluorine atoms participate in the etching of the SiO₂, and accordingly it can be seen that, if the added amount of water is increased to more than about 10%, substantially all of the fluorine atoms are removed before reaching the wafer, whereby no etching of the SiO₂ occurs. Next, the ashing rate when setting the temperature of the stage 7 at room temperature, 150°C, and 180°C, and varying the added amount of water from 0 to 25%, was determined. At this time, a wafer 8 having a resist coated to a thickness of 1.1 µm on the surface thereof was used as the sample. After ashing of the sample for 30 seconds, the thickness of the resist was measured by a contact needle type step difference measuring instrument, and the ashing rate of the resist was calculated. The results are shown in Fig. 2. In Fig. 2, the axis of the ordinate depicts the ashing rate of the resist, and the axis of the abscissa depicts the ratio of water to the total amount of oxygen, CF₄, and water. When water was not added, the ashing rate was very high, at 1 µm/min. or more, even when the temperature of the stage 7 was at room temperature, and thereafter, as the added amount of water was increased to about 10%, the ashing rate was lowered. When the added amount of water exceeded about 10%, the ashing rate of a wafer at room temperature could not be measured, and the ashing rate became about 0.5 µm/min. and about 0.9 µm/min., at wafer temperatures of 150°C, and 180°C, respectively. As a result, when the added amount of water is made about 10% or more, at which etching of the substrate layer does not occur, although the ashing rate, which is about 0.9 µm/min. at a wafer temperature of 180°C, is lower than when the added amount of water is less than about 10%, the ashing rate is improved about 5-fold compared with the method described above in which a gas composed mainly of oxygen is used, and about 2.5-fold compared with the method in which O₂ + H₂O are used as shown in Figure 4. The ashing rate is smaller when the added amount of water is about 10% or more than when it is smaller than about 10%. This may be considered to be due to an increased activation energy caused by the removal of fluorine atoms, and this can be readily estimated also from the tendency toward a change of the SiO₂ etching rate shown in Fig. 1 with the added amount of water of 10% as the boundary, which is the same as the ashing rate tendency shown in the Fig. 1. Accordingly, since the active species amount of oxygen atoms is increased by a generation of secondary oxygen atoms through the chemical reaction between water and fluorine, and further, oxygen atoms through the oxygen dissociation action of fluorine, and oxygen atoms and other active species through the secondary reaction can be obtained, the ashing rate is improved compared with the method in which O₂ + H₂O are used. Next, the change in activation energy was determined when the added amount of water was varied from 0 to 30%. The activation energy at this time was determined as described below. A wafer 8 surface coated with a resist to a thickness of 1.1 µm was used as the sample. The sample was mounted on the stage, and after ashing was performed by varying the stage temperature at predetermined temperature intervals each time the added amount of water was varied, the thickness of the resist was measured by a contact needle type step difference measuring instrument, and the ashing rate of the resist was calculated. By plotting the values on the axis of the ordinate on the logarithmic scale and the absolute temperatures on the axis of the abscissa on a reciprocal number scale, to prepare an Arrhenius plot, the activation energy was determined from the slope of the straight line. The results are shown in Fig. 3. The Fig. 3, the activation energy is shown on the logarithmic scale on the axis of the ordinate, and the ratio of water relative to the total amount of oxygen, CF₄, and water on the axis of the abscissa. When water was not added, the activation energy was as low as 0.05 eV, due to the influence of the fluorine atoms. Subsequently, as the added amount of water was increased to about 10%, the activation energy became higher, until at about 10% or higher, the activation energy became stabilized at about 0.39 eV, as in the downstream ashing method in which oxygen and water were used. As a result, when the added amount of water was about 10% or more, although the value of the activation energy of about 0.39 eV was greater than when the added amount of water was about 10% or less, as shown in Fig. 3, it became smaller compared with the 0.52 eV obtained in the method described above in which a gas composed mainly of oxygen was used. Accordingly, in addition to enabling ashing at a lower temperature than in the latter method using a gas composed mainly of oxygen, the temperature dependency was reduced and thus the reproducibility and controllability were enhanced. This phenomenon is understood to be due to the fact that, if the added amount of water is about 10% or more, fluorine atoms can be removed to eliminate the influence of the fluorine, whereby OH formed from water by a secondary reaction mainly determines the activation energy. From the above description, in this Example, when ashing of the resist is performed in the state in which the added amount of water is less than about 10%, namely the state in which there is less than one mole of water for every two moles of active species of fluorine atoms, a high ashing rate can be obtained at room temperature. Nevertheless, as shown in Fig. 1, since the SiO₂ substrate layer is etched, which has an adverse influence on the element formed on the wafer 8, ashing is not performed. Therefore, in this Example, in accordance with the present invention at least one mole of water is added for every two moles of the active species of fluorine atoms. That is, when the ratio of CF₄ relative to the amount of the gas mixture of oxygen and CF₄ is 15%, ashing is performed with the added amount of water of about 10% or more. Accordingly, since all fluorine atoms are removed by the H₂O added during the course of the downstream, before reaching the wafer, no etching of the substrate layer by fluorine atoms occurs, and further, due to the oxygen atoms obtained by the oxygen dissociation action of fluorine, the oxygen atoms generated by the chemical reaction of fluorine and water, and the oxygen atoms formed by the secondary reaction, the number of oxygen atoms can be increased, and therefore, when the stage temperature is 180°C, the ashing rate can be greatly improved to about 5-fold that of the method using a gas composed mainly of oxygen, and about 2.5-fold that of the method using oxygen and water. Also, OH formed by a separation of water lowers the activation energy to 0.39 eV, which is less than the 0.52 eV obtained in the method described above in which a gas composed mainly of oxygen is used, and thus in addition to enabling ashing at a lower temperature, the temperature dependency is reduced and the reproducibility and controllability are accordingly enhanced. As comparative tests, the following experiments were effected. First, in a process embodying the present invention, the above-mentioned resist ashing was carried out under the following conditions: CF₄ / (O₂ + CF₄) = 15% O₂ + CF₄ = 1 liter/min. Water vapor = about 200 ml/min. Microwave = 1.5 KW Vacuum of reaction chamber = 0.8 Torr Wafer temperature = 160°C The ashing rate was about 10,000 Å/min. As a Comparative Example, the water vapor was fed to the plasma chamber, together with CF₄ and O₂, under the following conditions. The other conditions were the same as above. O₂ + CF₄ + H₂O = 1 liter/min. CF₄ / O₂ = 15% H₂O = about 100 cc/min. The ashing rate was about 7,500 Å/min. Thus, about 33% increase in the ashing rate was attained by the above process embodying the invention. The process in this Example is not limited to the ashing of a resist, but also can be applied to the oxidation and ashing of a large number of organic materials other than a resist. Also, although CF₄ was employed as the gas for ashing, similar effects can be obtained even when the other fluorine-containing gases (e.g., C₂F₆ and NF₃), which are fluorinated gases, are employed, and a gas containing a halogen also may be used. As described above, in a process embodying the invention, the number of oxygen atoms participating in the ashing can be increased and substantially all halogen atoms are removed before they reach the wafer, and further, the reproducibility and controllability are enhanced by lowering the activation energy to thereby reduce the temperature dependency. Accordingly, a high ashing rate can be achieved at a desirably low temperature, without unacceptable etching of the substrate layer, thereby assisting in the production of substantially undamaged semiconductor devices.

Claims: A process of ashing an organic film on a supporting substrate (8), mounted in a working chamber (6), in which process a gaseous mixture containing oxygen and a halogen is subjected to ionization in a plasma chamber (4) from which neutral active species of a resulting plasma can pass into the said working chamber (6) so that neutral active species of oxygen from the plasma can ash the said organic film, the halogen serving to promote dissociation of the oxygen; characterised in that water vapour is introduced into the said working chamber (6) at a rate such that the working chamber receives at least one mole of water vapour for every two moles of free halogen atoms received therein from the plasma chamber (4), thereby to remove such free halogen atoms and thus prevent them from contacting the said organic film. A process as claimed in claim 1, wherein oxygen and a fluorine-containing gas are introduced into the said plasma chamber (4) to form the said gaseous mixture. A process as claimed in claim 2, wherein the said fluorine-containing gas is one or more compounds selected from the group consisting of F₂, CF₄, C₂F₆, NF₃, SF₆, ClF₃, CHF₃, CClF₃, C₂ClF₅, C₂Cl₂F₄, CCl₂F₂, CBrF₃, and xenon fluoride. A process as claimed in claim 2 or 3, wherein the said plasma is generated by means of a microwave or radio-frequency wave. A process as claimed in claim 2, 3 or 4, wherein the molar ratio of the said fluorine-containing gas to (O₂ + the said fluorine-containing gas) is in the range from 0.05:1 to 0.3:1. A process as claimed in claim 5, wherein the said molar ratio is in the range from 0.1:1 to 0.25:1. A process as claimed in any one of claims 1 to 6, wherein the rate of introduction of water vapour into the said working chamber (6) is such that the working chamber receives between 1.2 and 2.4 moles of water vapour for every two moles of free halogen atoms received therein from the said plasma chamber (4). A process as claimed in any preceding claim, wherein the said organic film is a resist film coated on a silicon dioxide or silicon nitride layer formed on an upper main face of a wafer (8). A process as claimed in any preceding claim, wherein the water vapour is generated by bubbling at least one carrier gas, selected from the group consisting of nitrogen, oxygen, hydrogen, argon and helium, through water (16) contained in a water vessel (15). A process as claimed in any one of claims 1 to 8, wherein the water vapour is generated by employing a heater (17) to heat water (16) contained in a water vessel (15).

Inventors: FUJIMURA SHUZO, HIKAZUTANI KENICHI, SHINAGAWA KEISUKE, FUJIMURA, SHUZO, HIKAZUTANI, KENICHI, SHINAGAWA, KEISUKE
Applicants: FUJITSU LTD, FUJITSU LIMITED
Application year: 1990
Main classification: H01L21
IPC codes: H01L21, G03F7