Inductive structures for semiconductor integrated circuits

Abstract: A variable inductance element integrable with a semiconductor integrated circuit comprises an electrically insulating substrate (1) having opposed first and second surfaces, an electrical conductor disposed in a first spiral (62) on the first surface of the substrate (1), an electrically insulating film (61) disposed on the first surface and the first spiral (62), a second electrical conductor disposed in a second spiral (2) on the electrically insulating film (61) and inductively coupled to the first spiral (62), and means (68, 70) for producing and controlling an electrical current flow through one of said spirals.

Description: The invention relates to a variable inductance element as claimed in the preamble of claim 1. Such kind of element is already known from WO-A-87 07074 comprising: an electrically insulating substrate having opposed first and second surfaces; an electrical conductor disposed in a first spiral on the first surface of the substrate; an electrically insulating film disposed on the first surface and the first spiral; a second electrical conductor disposed in a second spiral on the electrically insulating film and inductively coupled to the first spiral; and means for producing and controlling an electrical current flow through one of said spirals. It is an object of the present invention to provide another inductive structure having a controllable variable inductance. A solution of this object is characterized by: an electrically conducting first via penetrating the electrically insulating film electrically connecting a first end of the first spiral to a first end of the second spiral; and an electrically conducting ground plane disposed on the second surface of the substrate and a second electrically conducting via passing through the substrate from the first to the second surface electrically connecting a second end of the first spiral to the ground plane. The invention will be described in the following in more detail while referring to the enclosed Figures, in which: Figure 1(a) is a perspective view of a variable inductance according to an embodiment of the invention; Figure 1(b) is a schematic diagram of an equivalent circuit of the variable inductance of Figure 1(a); and Figure 2 is a schematic circuit diagram of a modification of the variable inductance of Figure 1(a). In Figure 1(a), a perspective view of a variable inductance according to the invention is shown. The variable inductance includes two similar spiral inductive structures. A spiral 2 includes an electrical conductor disposed on an electrically insulating substrate and a lead 6 in an air bridge structure connecting the internal end 4 of the spiral 2 to a terminal 7. The external end 3 of the spiral 2 is directly connected to a terminal 5. A similar spiral 62 is disposed on a substrate 1. The two spirals 2 and 62 are separated by an electrically insulating film 61. The terminals of spiral 62 are connected to an electrical signal source that causes a current to flow through spiral 62. The phase and magnitude of that current flow varies the effective inductance of spiral 2 because of the mutual inductive coupling of the two spirals. An electrically conducting ground plane 8 is disposed on the surface of substrate 1 opposite that on which spiral 62 is disposed. A current I 1 flows through spiral 2 and a current I 2 flows through spiral 62 because of the signal applied by signal source. The inductances of spirals 2 and 62 are L 1 and L 2 , respectively, and voltages V 1 and V 2 appear across those coils. If the impedance of the signal source is Z 0 and the mutual inductance between the spirals is M, then V 1 = jωL 1 I 1 + jωMI 2 V 2 = jωL 2 I 2 + jωMI 1 V 2 = -Z 0 I 2 . The effective impedance Z 1 of spiral 2 is thus Z 1 = V 1 /I 1 = jωL 1 + jω(I 2 /I 1 ) 2 (Z 0 - jωL 2 ) = ω 2 (I 2 /I 1 ) 2 L 2 + jω[L 1 + (I 2 /I 1 ) 2 Z 0 ]. From these equations, it follows that: jωM = (Z 0 - jωL 2 ) (I 2 /I 1 ). Since the inductances of the spirals L 1 and L 2 and the impedance of the signal source Z 0 are constant, it is apparent from the equations that the effective impedance of the spiral 2, Z 1 , is a function of the currents I 1 and I 2 and can be varied by controlling I 2 . The effective impedance of spiral 2 can also be increased or decreased depending upon the relative phases of the currents I 1 and I 2 . In Figure 1(a), terminal 5 of spiral 2 is connected through a via to the external end of spiral 62. A circuit 70 is connected in series with spiral 62 for varying the current flowing through spiral 62. Circuit 70 may be both an attenuator and an amplifier for decreasing and increasing the current flow through spiral 62. The other end of spiral 62 is connected through a termination 71 to the ground plane 8 by means of a via 72. An equivalent circuit of the structure of Figure 1(a) is shown in Figure 1(b). The current flowing in spiral 62 is controlled by circuit 70, thereby altering the effective inductance of spiral 2 in accordance with the equations set forth above. In particular, circuit 70 permits control of the ratio of current flows I 2 /I 1 , varying the impedance Z 1 of spiral 2. Depending upon the relative phases of the currents flowing through spirals 2 and 62, the effective inductance of spiral 2 can be increased or decreased. The connections of spiral 62 may be reversed as shown in the equivalent circuit of Figure 2. In the embodiment shown in Figure 1(a), the spirals 2 and 62 are wound in the same direction. By winding one of the spirals 2 and 62 in the reverse direction from the other, the direction of change of the inductance of spiral 2 with current flowing in spiral 62 can be reversed as if the connections of spiral 62 were reversed, i.e., changed from those of Figure 1(b) to those of Figure 2. While the embodiment of the invention shown in Figure 1(a) employs two layer structures including two spirals, additional layers including additional spiral inductors can also be employed.

Claims: A variable inductance element integrable with a semiconductor integrated circuit comprising: an electrically insulating substrate (1) having opposed first and second surfaces; an electrical conductor disposed in a first spiral (62) on the first surface of the substrate (1); an electrically insulating film (61) disposed on the first surface and the first spiral (62); a second electrical conductor disposed in a second spiral (2) on the electrically insulating film (61) and inductively coupled to the first spiral (62); and means for producing and controlling an electrical current flow through one of said spirals, characterized by: an electrically conducting first via penetrating the electrically insulating film(61) electrically connecting a first end of the first sprial (62) to a first end of the second spiral (2); and an electrically conducting ground plane (8) disposed on the second surface of the substrate (1) and a second electrically conducting via (72) passing through the substrate (1) from the first to the second surface elecrically connecting a second end of the first spiral (62) to the ground plane (8). The variable inductance element of claim 1, characterized in that the substrate (1) is an electrically insulating semiconductor. The variable inductance element of claim 2, characterized in that the substrate (1) is chosen from the group consisting of gallium arsenide and indium phosphide. The variable inductance element as claimed in one of the claims 1 to 3, characterized in that the current producing means producing and controlling an electical current flow through the first spiral (62). The variable inductance element of claim 1, characterized in that the means (70) for controlling a flow of current through the second spiral (2) is serially connected to the first end (5) of the second spiral (2) and an electrical termination (71) connected between the second end of the first spiral (62) and the ground plane (8). The variable inductance element of claim 5, characterized in that the controlling means (70) is selected from the group consisting of an attenuator and an amplifier.

Inventors: ANDOH NAOTO, INOUE AKIRA, NAKAHARA KAZUHITO, NAKAJIMA YASUHARU, ANDOH, NAOTO, INOUE, AKIRA, NAKAHARA, KAZUHITO, NAKAJIMA, YASUHARU, ANDOH, NAOTO, MITSUBISHI DENKI K.K., INOUE, AKIRA, MITSUBISHI DENKI K.K., NAKAHARA, KAZUHITO, MITSUBISHI DENKI K.K., NAKAJIMA, YASUHARU, MITSUBISHI DENKI K.K.
Applicants: MITSUBISHI ELECTRIC CORP, MITSUBISHI DENKI KABUSHIKI KAISHA
Application year: 1990
Main classification: H01F17
IPC codes: H01L23, H01F21, H01F17, H01L21