Laser deposition method and apparatus

Abstract: A metal target and a substrate are placed, in confronting relation, in a vacuum chamber whose inte­ rior is kept in a high vacuum state, and laser light is irradiated to the surface of the target to emit a high-speed evaporation material from the target. The emitted material is then deposited on the substrate. The composition of this deposited film on the sub­ strate is controlled by providing a direction selec­ ting means and a speed selection means between the target and the substrate, or by applying a predetermined high voltage between the target and the substrate. Particularly, the application of the high voltage increases the cooling speed and impact energy of the evaporated material on the substrate to form an amorphous metal film.

Description: BACKGROUND OF THE INVENTION 1. Field of the invention: This invention relates to laser deposition method and apparatus in which laser light is irradiated to a target so that an emitting material emitted from the target is deposited on a substrate. 2. Description of the Related Art: Heretofore, a variety of films and particularly thin films have been used as anti-reflection films of optical parts, such as camera lens, and also in surface coatings of ornaments. As great advances have recently been made in electronics, the irradiation of thin films to the wiring of semiconductor devices, ICs, LSIs, etc. as well as to magnetic recording materials has been on the rise. Further, upon progress of study on thin films, it has turned out that various peculiar effects such as tunneling effect could be achieved with thin films and also that shaping the material into a thin film could cause the structure of the material to change, depending on which various new functions and features could be provided. Accordingly the significance of films is increasing throughout various fields. Known film manufacturing technologies are exemplified by a vacuum deposition method in which particles of a film material are caused to evaporate in high vacuum and the evaporated particles are deposited over a substrate, and a sputtering method in which ions are irradiated to a target (an object to which ion is to be irradiated) to cause atoms and molecules of the target surface to evaporate and then to be deposited over a substrate; and any suitable method may be adopted depending on the kind of a film to be produced. By utilizing plasma and ions in the conventional film production, the following effects can be obtained: (1) It is possible to clean the substrate surface on which a film is to be formed, causing an improved degree of close adhesiveness. (2) It is possible to control the property, such as crystallinity, of a film to be formed. Following are methods for positively utilizing the above effects of plasma and ions: (a) Ion plating method, in which evaporated particles are ionized in plasma, are accelerated by electromagnetic field and are then deposited on the substrate. (b) Cluster ion beam method, in which a cluster is formed of about 1,000 atoms or molecules by adiabatic expansion, is ionized and is then accelerated and deposited over the substrate. (c) Ion beam method, in which ions formed in an ionization unit is irradiated to the target. (d) Ion beam enhanced deposition method, in which particles are evaporated by ion beam, are ionized and is then deposited on the substrate. However, the above methods have several problems on preparations of thin films. In ion plating method (a) and ion beam method (c), particles are evaporated and ionized by gaseous plasma and discharge of inert gas such as argon. Therefore, these methods cannot be used in high vacuum so that impurities contained in the film can be minimized only inadequately. This is partly because inert gas contains impurities, which can be mixed in the film and partly because inert gas itself can be mixed in the film as impurities. Further, in ion plating method (a), cluster ion beam method (b) and ion beam enhanced deposition method (d), an evaporation source and ionization unit for evaporating a material are provided independently of each other, thus making the entire apparatus bulky and complex. In addition, in any of the methods (a) through (d), since most of the ions of film material to be evaporated is has almost singly charged, it is impossible to produce a film of a peculiar characteristic in which multiply charged ions are selectively utilized. Also, there have been many restrictions to the material to be evaporated so that a film having a desired quality could not be formed. Furthermore, in the case of a multilayer film composed of a plurality of superimposed films or a mixed film formed of mixture of a plurality of materials, evaporation sources are needed one for each material to be evaporated, which makes the entire apparatus very bulky. Another known method is a laser deposition method in which laser light is focused and irradiated to a target to evaporate an emitting material from the target so that evaporated particles is deposited on the substrate. This prior art is exemplified by the JP-A-116373/1984 and the JP-A-43929/1989. In these prior laser deposition methods, since there is provided no means for selecting the emitting material emitted only in a predetermined direction, a film having an undesired characteristic would also be formed. Amorphous materials in a state of thermodynamically unequilibrium are not entirely crystalline and have only short-range order in its structure, having characteristics good in corrosion resistance, abrasion resistance, etc. Further, amorphous iron or iron alloy has a good magnetic characteristic, such as a high magnetic permeability and a low coercive force, so that materials suitable for use in various kinds of applied art such as transformers and magnetic heads. Consequently, researches and studies have in recent years been made on amorphous materials. Heretofore, for forming an amorphous film, a vacuum deposition method, a sputtering method and a liquid quenching method are known. In the vacuum deposition method, a sample is heated and evaporated in a vacuum chamber by, for example, a heater, and is deposited and cooled on a substrate to form an amorphous film. In the sputtering method, a plasma of argon or nitrogen gas is formed in a vacuum chamber to sput (strike out) sample particles with the plasma particles so that the sample particles are deposited and cooled on a substrate. In the liquid quenching method, a sample is melted by heating at a temperature higher than its melting point, and the melted sample is then cooled quickly. However, according to the liquid quenching method, there is a limit in the cooling speed (supremum speed of about 10 7 K/sec), and hence only limited kinds of metals or alloys can be made amorphous. According to the vacuum deposition method, since the energy of the sample particles during deposition is relatively low, the cooling speed of the sample particles deposited on the substrate is small so that only limited kinds of metals or alloys can be made amorphous. According to the sputtering method, the cooling speed of the sample particles on the substrate is higher than that in the vacuum deposition method, but residual gas in the atmosphere will be mixed into a prospective film during sputtering, thus deteriorating the film quality. Therefore it is difficult to form a good quality amorphous film. Forming a single-metal or alloy amorphous film requires a high cooling speed of, for example, higher than 10 10 K/sec for Fe (iron) [Publication by H. A. Davies: proc. of 3rd intern. conf. on Rapidly Quenched Metals (1978) 1]. For this reason, according to the conventional methods, such good quality amorphous film could not be achieved. The article "Diamond-like carbon films prepared with a laser ion source" by S. S. Wagal et al published on pages 187 and 188 of APPLIED PHYSICS LETTERS Vol. 53, No. 3, 18. July 1988 discloses a laser deposition method and apparatus according to the preamble of claims 1 and 18, respectively. However, since direction and velocity of the ion beam are manipulated by means of an electric field resulting from a charged accelerating grid, ions are mainly deposited on the substrate. Furthermore, the GB-A-2 155 042 A relates to a laser induced ion beam generator comprising an ion selection electrode to which a predetermined voltage is applied. Thus, ions are gathered in the center whereas neutral particles being not affected by the electric field are distributed evenly. Moreover, since a subsequent ion accelerator is provided, the film formed on the substrate also consists of an excessively high concentration of ions as compared to neutral particles. Additionally, the post-published document WO-89/10 427 discloses a mask disposed in the travelling path of an ion beam in order to deposit a film having a predetermined pattern on a substrate. Nevertheless, the mask also does not act on all particles of the laser abrasion plume, since acceleration grids to which a negative potential is applied are used to generate the ion beam. Finally, the article "Laser-induced plasmas for primary ion deposition of epitaxial Ge and Si films" by D. Lubben et al published on pages 968-974 of J. Vac. Sci. Technol. B 3 (4), Jul/Aug 1985 discloses a laser deposition method and apparatus according to the preamble of claims 14 and 16, respectively. Therein, an electronically actuated shutter is used for removing massive particles having a low velocity from the generated ion beam. However, since a voltage is applied between the substrate and the target, the deposited film is also mainly constituted of ions. Furthermore, a pulsed laser source and an external timing circuit with a programmable delay are required in order to trigger the shutter with respect to the laser pulse. It is therefore an object of the present invention to provide a laser deposition apparatus and method which are capable of overcoming the short-comings of the prior art. This object is achieved by a laser deposition method and apparatus according to claim 1 and 18, respectively. Accordingly the structure of the deposited film is merely controlled by means of a shielding plate having a predetermined opening such that only a part of the emitted material which is emitted in a predetermined solid angle is selected. Alternatively, this object is achieved by a laser deposition method and apparatus as claimed in claim 14 and 16, respectively. By providing a rotary disk having a predetermined opening, the velocity distribution of the emitted material can be controlled simply by varying the revolution speed of the rotary disk. Furthermore, in case a plurality of rotary disks are used, the employed laser light may alternatively be continuous. Thereby, bundle of particles are formed by choppering the continuous emission. For deposition, firstly the target capable of emitting a deposition material is attached to a target holder while the substrate on which surface a film is to be formed is attached to a substrate holder. Then gas in the airtight chamber is evacuated by a vacuum pump, for example, to keep the interior of the airtight chamber in a pressure-reduced state. Subsequently, laser light is irradiated to the target from a laser. Preferably, the laser should radiate pulsed laser light, such as excimer laser, or laser light chopped from the continuous laser light. This laser light is focused on the surface of the target by an optical system, such as an optical lens, thus irradiating the laser light of a predetermined high energy. By this irradiation of laser, ions or electrons and neutral atoms are emitted from the target, and then laser induced plasma is produced. The density of laser induced plasma, for example, can be easily adjusted by varying, for example, the focusing degree of the optical system. The emitting material emitted from the target are scattered in all directions, while a part of the emitting material flies toward the substrate and is deposited to the surface of the substrate. The apparatus of this invention includes a selectively transmitting means for controlling the emitting material, which is to be deposited on the substrate, depending on the physical state of velocity, mass, etc. of the emitting material and also on the chemical state of kind (singly charged and multiply charged ions, electrons, neutral atoms, etc.) of the emitting material. The selectively transmitting means may be a filter (an aperture), in the form of a shielding plate having an opening. They may also be a filter in the form of a shielding plate having an opening for repeatedly opening and closing the opening at a predetermined time interval to select a part of the emitting material passing through the opening only at a predetermined time. With this selectively transmitting means, only a part of the emitting material having passed the opening of the shielding plate is allowed to reach the surface of the substrate. On the other hand, the emitting material emitted from the target varies in physical state such as velocity, mass, etc. and in direction of emission, depending on the chemical state such as the kind of the emitting material, thus causing a spatial component distribution of the emitting material based on this variation. The characteristic of the deposited film can be controlled by spatial selection by, for example, a shield plate having an opening. For example, by this spatial selection, it is possible to control the proportion of crystal phase, such as α phase and β phase, of a tungsten deposition film. Further, by locating, in a path from the target to the substrate, a velocity filter by rotating a disk having an opening of an predetermined angle, it is possible to select only the emitting material which reaches the velocity filter in a predetermined time. Namely, as laser light is irradiated to the target, the emitting material reaches the velocity filter in the order of velocity. Therefore, by opening and closing the velocity filter in synchronism with irradiation of laser light and by opening the velocity filter only for a predetermined time after irradiation of laser light, it is possible to select only the emitting material which has a velocity corresponding to that time. For example, using molybdenum for the target, fine particles can be removed or only ions can be selected. If a charged particle controlling means for controlling spatial and timewise distribution of charged particles in the emitting material by adjusting the emitting state such as by applying a predetermined voltage between the target and the substrate is provided, it is possible to control, for example, the crystallinity of a deposited film by adjusting the velocity, order and quantity when the emitting material, which is emitted from the target, reaches the substrate, according to the chemical state of the emitting material. For example, if voltage is irradiated in such a manner that the potential of the target is a positive or negative value with respect to the substrate, an electromagnetic field is formed in the traveling path of the emitting material so that ions having charge are accelerated or decelerated by this field. This varies the velocity, order and quantity according to the chemical state of the emitting material, which is deposited to the substrate, so that the crystal structure of the film to be formed on the substrate surface will be changed. By varying the voltage irradiated between the target and the substrate, it is possible to control the property, such as crystal structure, of the deposited film. For example, if the potential of the target is less than -1 kV or more than 1 kV with tungsten used for the target, it is possible to form a film of small crystal particles on the substrate. If it is about 300 V, it is possible to a tungsten film which is very good in crystallinity. As described above, according to the laser deposition method and apparatus of this invention, the proportion of crystal phases and the crystal structure of the deposited film can be controlled. Therefore, a film having a desired proportion of crystal phases and a desired crystal structure can be obtained with simple construction, and a film having a new structure selectively using multiply charged ions can be obtained. Accordingly, in various fields using films, it is possible to achieve new functions and features and to improve various functions. The above and other advantages, features and additional objects of this invention will be manifest to those versed in the art upon making reference to the following detailed description and the accompanying drawings in which several preferred embodiments incorporating the principles of this invention are shown by way of illustrative example. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic cross-sectional view showing main parts of a laser deposition apparatus according to a first embodiment of this invention; FIG. 2 is a characteristic view of X-ray diffraction of a tungsten film according to the first embodiment; FIG. 3 is a diagram schematically showing one example of a target according to the first embodiment; FIG. 4 is a characteristic view of X-ray diffraction of an Fe-Cu film according to the first embodiment; FIG. 5 is a view similar to FIG. 1, showing main parts of a modified laser deposition apparatus according to a second embodiment; FIG. 6 is a schematic perspective view showing the construction of the second embodiment; FIG. 7 is a schematic perspective view showing a modified construction of the second embodiment; FIG. 8 is a graph showing the velocity distribution of materials emitted from a target; FIG. 9 is a view similar to FIGS. 1 and 5, showing main parts of another modified laser deposition apparatus according to a third embodiment; FIG. 10 is a characteristic view of X-ray diffraction of a tungsten film according to the third embodiment; FIG. 11 is a view similar to FIGS. 1, 5 and 9, showing main parts of still another modified laser deposition apparatus according to a fourth embodiment; Various embodiments of this invention will now be described with reference to the accompanying drawings. First Embodiment FIGS. 1 through 4 show a laser deposition apparatus according to a first embodiment of this invention. As shown in FIG. 1, an airtight chamber 10 is a pressure-resistant chamber which is tightly closed to shield its interior from the exterior space. To the airtight chamber 10, a vacuum pump 12 is connected via a pressure regulator 14; by operating the vacuum pump 12, it is possible to cause the interior of the airtight chamber 10 to assume a pressure-reduced state. Usually, the internal pressure of the airtight chamber 10 is detected beforehand by means of a pressure detector (not shown), and the pressure regulator 14 can be controlled to keep the interior of the airtight chamber 10 at a predetermined pressure. Thus, the interior of the airtight chamber 10 can be made in a predetermined pressure-reduced state by the vacuum pump 12 and the pressure regulator 14. Further, to the airtight chamber 10 a gas source 20 is connected via a valve 16 and a gas flow regulator 18 so that a desired gas from the gas source 20 can be introduced a predetermined amount at a time into the airtight chamber 10. Then the interior of the airtight chamber 10 can be kept in a predetermined gas atmospheric state. A laser 30 radiates predetermined laser light 32, using pulsed excimer laser, for example. The laser light 32 passes a focusing lens 34 (optical system) and is then introduced into the airtight chamber 10 via a transmission window 36 formed in the airtight chamber 10. Inside the airtight chamber 10, a rotary table 40 is mounted to support thereon a target 42. Specifically, to the rotary table 40 a secondary motor 44 is fixed. A target holder 46, to which the target 42 is secured, is fixed to a main shaft of the secondary motor 44. Therefore, when applying laser light 32 to the target 42 by the focusing lens 34, it is possible to control the density of applying power of laser light, which is to be irradiated to the target 42, by adjusting the distance between the focusing lens 34 and the target 42. It is thereby possible to control the quantity and composition, e.g. ion quantity of the emitting material containing multiply charged ions of the emitting material and proportion of multiply charged ions, of the emitting material emitted from the target 42. In this invention, laser light is irradiated to the target 42 to generate plasma, and the density of this plasma also can be controlled by adjusting the density of irradiated power of laser light. In order to prevent the concentrated damage on the target 42 by the irradiation of laser to a fixed point, the secondary motor 44 is driven to rotate the target holder 46. Namely, by rotating the target holder 46 to rotate the target 42, the laser light focused by the focusing lens 34 is irradiated to individual portions of the target 42. Thus the target can be prevented from the concentrated damage on the target. Further, by rotating the rotary table 40 about its axis of rotation, it is possible to vary the angle of the laser light from the focusing lens 34 with respect to the target 42. Thus it is possible to control the direction of the emitting material emitted from the target 42. A substrate holder 50 is disposed inside the airtight chamber 10 in such a position as to confront the target 42. A substrate 52 over which a film is to be formed by deposition is attached to the substrate holder 50. In the first embodiment, a shielding plate 60 is provided on the front side of the substrate 52 as a selectively transmitting means serving as a deposition control means. This shielding plate 60 has an opening 62 so that the emitting material emitted from the target 42 is restricted to that passing through the opening 62; that is, the traveling path of the emitting material is restricted spatially to select the emitting material emitted in a predetermined direction. Therefore, the material to be deposited on the surface of the substrate 52 is limited only that emitted from the target 42 in the direction of the opening 62. The components of the emitting material emitted from the target 42 have a predetermined distribution, and therefore a desired components of the emitting material can be selected according to the position of the opening 62 of the shielding plate 60 and can be deposited over the substrate 52. Two temperature control units 70, 72 are respectively attached to the target holder 46 and the substrate holder 50 for controlling the respective temperatures of the target 42 and the substrate 52. In the laser deposition apparatus of this embodiment, when laser light 32 is focused and irradiated to the target 42, laser induced plasma is produced and the emitting material is emitted from the target 42. This emitting material is composed of neutral particles, cluster, liquid particles, fine grains, ions including multiply charged ions of them, electrons, etc. The emitting material is emitted in a predetermined direction, depending on its components. Therefore, the material emitted from the target 42 has a particular spatial distribution depending on its components; it is possible to select a desired component according to the position of the opening 62 or the angle of the rotary table 40. Example 1 The experiment was actually conducted under the following conditions, using the apparatus of the first embodiment. In this example, the target 42 was tungsten (W); the substrate 52, glass; the laser 30, KrF excimer laser (wavelength of 249 nm, pulse width of 16 nsec, pulse energy of 250 mJ); the repeating period of laser, 25 Hz; the total pulse number of irradiation of laser the target 42, 30,000 pulses; the area of irradiation of laser to the target 42, 6x10 -3 cm 2 ; the rotational velocity of the motor 44, 20 rpm; the incident angle of laser light 32 with respect to the target 42, 45°; the temperature of the target 42 and the substrate 52, room temperature the pressure of the airtight chamber 10, less than 1.3 x 10 -3 Pa (1x10 -5 Torr). Any particular gas from the gas source 20 was not introduced into the chamber 10. Further, the distance between the target 42 and the substrate 52 was 30 mm, and the shielding plate 60 was disposed in close contact with the substrate 52. Under the foregoing conditions, the laser light 32 was focused and irradiated onto the target 42 to generate there laser induced plasma. Then from the target 42, neutral particles, cluster, ions including polyvalent ions and electrons were emitted in all directions. The emitting material flied also toward the substrate 52 and is deposited on the substrate 42. The shielding plate 60 having the opening 62 was disposed in front of the substrate 52. Since the spatial distribution (emitting direction) of ions in plasma varies depending on their number of charge, it was possible to control the ratio of ions of individual number of charge (e.g., +1 charge, +2 charge, +3 charge) reaching the substrate, by selecting a particular direction by varying the position of the opening 62. Also, since the neutral atoms, cluster, fine grains, liquid drops are different in spatial distribution, it was possible to control the ratio of charged particles and neutral particles reaching the substrate, by selection of a particular direction. FIG. 2 shows the results of X-ray diffraction of the tungsten deposition film deposited on the substrate 52. In FIG. 2, the horizontal coordinate stands for diffraction angle 2Θ of X-ray, and the vertical coordinate stands for intensity of diffracted X-ray. In the case where the largeness of the opening 62 was 30 mm (solid angle was 0.663 steradian), the tungsten deposited film has peak in incident angle corresponding to α phase and β phase, there existing mixed crystals of α phase and β phase. On the other hand, in the case where the largeness of the opening 62 was 5 mm (solid angle was 0.022 steradian), only the component, of the emitting material, which was high in ion (including multiply charged ion) quantity and plasma density in particular was deposited. Therefore, the tungsten deposited film was α single phase. Thus, by using the spatial distribution of components of the emitting material, it was possible to select only a particular component by varying the largeness of the opening 62. Therefore, it was understood that the property of a film could be controlled. CoKα was used for the X-ray source. The tungsten film thus obtained is suitable for use as wiring materials for IC and the like. At that time, the resistivity of the film should preferably be small. The resistivity of β phase is larger than that of α phase. However, the existence of this β phase is not desirable when the tungsten film is used as wiring materials. According to this invention, since only the emitting material emitted in a predetermined direction was selected, undesirable β phase could be removed and a film of only α phase could be formed. Further, by utilizing its high melting point, the tungsten film can be used for coating the surface of heat-resistant part or member. In using a tungsten film, its crystallinity and crystal structure are factors which dominate conductivity, heat resistance and corrosion resistance; the apparatus of this embodiment, which can control these factors, can perform very important role in utilizing a tungsten film. Example 2 The experiment was conducted under the following conditions which are different from those in Example 1, using the apparatus of this embodiment. As shown in FIG. 3, the target 42 was a split type composed of copper (Cu) and ion (Fe). The substrate 52 was glass; the laser 32, ArF excimer laser (wavelength of 193 nm, pulse width of 16 nsec, pulse energy of 200 mJ); the repeating period of laser, 25 Hz; the total pulse number of irradiation of laser to the target 42, 30,000 pulses; the area of irradiation of laser over the target 42, 6x10 -3 cm 2 ; the incident angle of laser light 32 with respect to the target 42, 45°; the temperature of the target 42 and the substrate 52, room temperature; the pressure of the airtight chamber 10, less than 1.3 x 10 -3 Pa (1x10 -5 Torr). Under the foregoing conditions, the laser light 32 was irradiated onto the target 42 to generate there laser induced plasma. Then from the target 42, the emitting material and ions (including polyvalent ions) and electrons of iron and copper were alternately generated. This is true partly because the target 42 was composed of iron and copper as shown in FIG. 3, and partly because iron and copper were alternately irradiated by laser light 32 as the motor 44 was rotated. By controlling the rotational velocity of the target 42, various kinds of multilayer films can be formed. Namely, the film thickness is determined depending on the irradiating time; if the rotating velocity of the target 42 is increased, the frequency of irradiation alternately over iron and copper is also increased. As a result, the number of layers of a film is increased while the thickness of each layer is reduced. FIG. 4 shows the results of X-ray diffraction when a multilayer deposited film composed of iron and copper was formed on the substrate 52 in close contact with the shielding plate 60 as the target 42 was rotated at various velocities. The largeness of the opening 62 was 5 mm, and the distance between the target 42 and the substrate 52 was 30 mm. As is apparent from FIG. 4, when the multilayer film was composed of 1,840 layers, 460 layers, 92 layers or 20 layers of iron and copper as the rotational velocity was varied, it turned out that these multilayer films were different in construction. Specifically, the crystal structure of a multilayer film was varied according to the rotational velocity of the target 42. Regarding iron, there stably existed in a multilayer film ε phase, which can be obtained only in a high-temperature and high-pressure state. Therefore, it will be understood that a film in a special construction. Every deposited film was has a common thickness of 13.8 nm (1,380 A). Further, if the target 42 is a split type of two or more kinds of materials, a mixed film can be formed according to the materials. By selecting a suitable proportion (area ratio) of separate materials of the target 42, it is possible to easily control the ratio of mixture of a multilayer film. According to the first embodiment, it is possible to select, from the emitting material emitted from the target 42, a suitable component of the material to form a desirable deposited film. If a reactive gas is introduced from the gas source 20 into the airtight chamber 10 and deposition takes place in the reactive gas, it is possible to increase the reactivity between ions, including polyvalent ions, of the emitting material and the gas so that reactive deposition can be performed in which the reactant is deposited on the substrate. For reactive gas, O 2 , O 3 , N 2 , CH 4 , C 2 H 2 or other kind of gas may be selected depending on the kind of a film to be formed. For manufacturing the target 42, various kinds of metals, alloy, ceramics, alumina, organic materials, liquid or gas may be absorbed in other solid surface. Accordingly, a desired film can be formed by selecting one from these various kinds of materials. In this embodiment, since the apparatus has a temperature control unit 70, the target can be kept at a predetermined temperature. Therefore, it is possible to prevent the target from cracking due to rapid temperature rise, so that scattering of gas or liquid from the solid material, in which the gas or liquid is absorbed, is prevented. Further, it is possible to control the crystal structure of a film by controlling the temperature of the substrate. Generally, by selecting the method of superimposing layers to form a multilayer, the materials to be superimposed, and the mixing ratio, it is possible to obtain a variety of properties which are possessed by non of materials existing in nature. If a multilayer film having a new property is obtained, it is expected that the film might perform a definitely novel function. In addition, a multilayer film having a special magnetic property can be used for optomagnetic recording material by making the film strong in vertical anisotropy. Second Embodiment FIGS. 5 through 7 show a laser deposition apparatus according to a second embodiment. Like reference numerals designate similar parts throughout FIGS. 1 through 7. For a significant feature of the second embodiment, as a selectively transmitting means which is a deposition means, there is provided a velocity filter 80 for repeatedly shielding between the target 42 and the substrate 52 at a predetermined time interval to select on the emitting material passing there in a predetermined time. The velocity filter 80 is composed of a motor 82 and a rotary disk 84. The rotary disk 84 has an opening 86 of a predetermined angle of opening. Specifically, in this example, as shown in FIGS. 5 and 6, the rotary disk 84 has a fan-shaped opening 86 which opens through an angle of Θ. The location of the velocity filter is such that the rotary disk 84 is disposed near the substrate side of the shielding plate 60. Further, the target 42, the substrate 52 and other related parts are supported on the rotary table 40. In this embodiment, like the first embodiment, by rotation of the rotary table 40, it is possible to adjust the angle of the laser light 32 with respect to the target 42 so that the target toward the substrate 52 can be spatially selected. In this apparatus, a pulse laser generator 30 such as excimer laser focuses and irradiates pulse laser light to the target 42. Like the first embodiment, the emitting material is emitted from the target 42 to generate here laser induced plasma. Of the emitting material, that flew toward the substrate 52 passes a predetermined opening 62 of the shielding plate 60. In this embodiment, the velocity filter 80 is located behind the shielding plate, the rotary disk 84 of the velocity filter 80 is rotated in synchronism with the pulse ocsillating period of the laser 30. Therefore, selection can be made on the timewise distribution of the emitting material so that a desired component can be selected. Specifically, by selectively varying, for example, the width (angle of opening Θ) of the opening 86 of the rotary disk 84 of the velocity filter 80, the number of rotations of the rotary disk 84, the disk diameter, the repeating period of pulse laser, the distance between the target 42 and the velocity filter 80, it is possible to select, from the emitting material emitted from the target 42, only that emitted at a particular velocity. Therefore, selection of components utilizing timewise component distribution from the emitting material can be achieved. Assuming that the velocity of the material (particles) emitted from the target 42 is v (cm/sec) and the distance between the target 42 and the velocity filter 80 is d (cm), the time t a taken for the material emitted from the target 42 to reach the velocity filter 80 is expressed by the following equation: t a = d/v On the contrary, assuming that the rotational velocity of the rotary disk 82 in the velocity filter 80 is ω (rpm) and the angle Θ (degree) of the opening 86, the time t p taken for the material emitted from the target 42 by irradiation of one pulse laser light 32 to reach the velocity filter 80 is expressed by the following equation: t p = (60/ω)·Θ/360 Further, assuming that the repeating period T (pulses/sec) of the laser light 32 is identical with the rotational period ω (rpm) of the velocity filter 80, the time t p is expressed by the following equation: t p = Θ/360T Therefore, if the time t a taken for the emitted material to reach the velocity filter 80 is equal to the time t p taken for the emitted material to pass the velocity filter 80, it is possible to select only the material that is emitted at a velocity higher than the velocity v, for deposition on the substrate 52. For this purpose, the distance d between the target 42 and the velocity filter 80 may be set by the following equation: d = (1/360)·v·Θ/T The selection utilizing spatial component distribution by the opening 62 of the shielding plate 60 is identical with that in the first embodiment. In the illustrated example, laser to be irradiated is pulse-like, but alternatively may be continuous. If the laser is oscillated continuously, the construction of FIG. 6 should be modified as shown in FIG. 7. Namely, in the case of continuous laser light, a plurality of rotary disks 84 are used in the velocity filter 80, and the velocity filter 80 of FIG. 7 as that of FIG. 5 is supported on the rotary disks 80. As shown in FIG. 7, the rotary disk 84 has a fan-shaped opening 86 which opens through an angle Θ. The location of the velocity filter 80 is such that the rotary disk 84 is disposed near the substrate side of the shielding plate 60. In this example, the target 42, the substrate 52 and other related parts are supported on the rotary table 40. By adjusting the angle of laser light 32 with respect to the target 42, the target 42 toward the substrate can be spatially selected. In this apparatus, the CW laser 30 such as large-output CO 2 laser is focused and irradiated to the target 42. Like the first embodiment, the material is emitted from the target 42, and laser induced plasma is generated there. Of the emitted material, that flew toward the substrate 52 passes a predetermined opening 62 of the shielding plate. The velocity filter 80 composed of a plurality of rotary disks is located behind the shielding plate 60. By selecting, for example, the width (angle of opening Θ) of the opening 86 of the first rotary disk 84 of the velocity filter 80, the number of rotations of the first rotary disk 84, the disk diameter, the distance between the target 42 and the velocity filter 80, the bundle (or pack) of particles 100 is formed by the choppering the continuous emission, which contains various velocity components, from the target 42 using the first rotary disk 84. In the bundle of particles 100 there are the materials having various kinds of velocitys. The material flew at a higher velocity reaches the second rotary disk 106 earlier, while that flew at a lower velocity reaches the second rotary disk 106 afterwardly. As a result, the bundle of particles 102 extends spatially and has a particle distribution spatially corresponding to the velocity component. By selecting, for example, the width (angle of opening Θ′) of the opening 108 of the second rotary disk 106, the number of rotations of the rotary disk 106, its delay time, the disk diameter, the distance between the first rotary disk 84 and the second rotary disk 106, it is possible to obtain a bundle of particles of which component is selected, like the bundle of particles 104. For efficiency, the number of rotations of the second rotary disk is the same as that of the first rotary disk or a multiple thereof. By using a plurality of rotary disks, even in the case of continuous laser light, it is possible to select a particular velocity component of the emitting material like pulse-like generation. As described above, the laser light of this embodiment may be either pulse or continuous. For the feature of this embodiment, laser light is focused and irradiated to the target, and the traveling path of the emitted material is restricted spatially and timewise, and the material emitted in a predetermined direction in a predetermined period of time is selected. Experiment The experiment was conducted by using the apparatus of the second embodiment. The results of this experiment are as follows. In this experiment, the target 42 was molybdenum (Mo); the substrate 52, glass; the laser 30, KrF excimer laser (wavelength of 249 nm, pulse width of 16 nsec, pulse energy of 250 mJ); the internal pressure of the airtight chamber 10, less than 1.3 x 10 -3 Pa (1x10 -5 Torr); the repeating period of laser pulse, 20 pulses/sec; the applying angle of laser light 32 with respect to the target 52, 45°; the total pulse number, 30,000; the area over which the laser light 32 is irradiated the target 42, 6x10 -3 cm 2 , the rotational velocity of the target 42, 20 rpm; and the temperature of the target 42, room temperature. Under the above condition, vacuum deposition took place. The velocity distribution of the particles constituting the emitted material is shown in FIG. 7. By allowing the emitted material to pass the velocity filter 80 only after the lapse of a predetermined time from irradiation of laser pulses to the target, it is possible to select the emitted material which is to pass the velocity filter 80. In other words, if the velocity filter 80 is set to a very short time from irradiation of laser light 32 over the target 42, it is possible to select only multiply charged ions. If the velocity filter 80 is set to open only a predetermined time thereafter, it is possible to select only singly charged ions. Now, the experiment was conducted under the following conditions: the diameter of the opening 62 of the shielding plate 60 was 20 mm; the diameter of the rotary disk 84 of the velocity filter 80, 30 mm; the angle Θ of the opening 86 of the rotary disk, 5°; the number of rotations, 1,200 rmp; the distance d between the target 42 and the velocity filter 80, 34.7 mm; the distance between the target 42 and the substrate 52, 40 mm; and the shielding plate 60 is disposed 2 mm ahead of the velocity filter. By synchronizing the pulsed laser light 32 with rotation of the velocity filter 80, the emitted material is allowed to pass the velocity filter 80 only in a predetermined period of time (0.7 msec) from the start of irradiation of the laser light to the target 42. Thus, the velocity filter 80 allows only the material having a velocity of more than 5x10 3 cm/sec, to pass in accordance with the time to pass. As is apparent from FIG. 7, since fine grains are small in velocity, it is presumed that the fine grains in the deposited film can be reduced in number by the velocity filter 80. To this end, deposition tests were conducted in the absence of and in the presence of the velocity filter 80, and the density of fine grains was measured. The density of fine grains in the presence of the velocity filter 80 was 65/mm 2 , while the density of fine grains in the absence of the velocity filter 80 was 2.4x10 3 /mm 2 . From the results of this experiment, it is understood that the velocity filter 80 can eliminate the fine grains efficiently. This number of fine grains was measured by using SEM (Scanning Electron Microscope) photographs taken in the experiment. Third Embodiment FIGS. 9 and 10 show a third embodiment. Like reference numerals designate similar parts throughout the first, second and third embodiments. For the features of the third embodiment, the apparatus is provided with an irradiated-voltage control means for controlling the velocity, kind and quantity of the emitting material according to its chemical state to keep the voltage irradiated between the target 42 and the substrate 52 at a predetermined level. The irradiated-voltage control means is composed of a switch 90, a positive variable voltage source 92 or a negative variable voltage source 94. With this irradiated-voltage control means, a voltage is irradiated to the target 42, and the substrate 52 is connected to the ground. Therefore, it is possible to give a predetermined positive or negative potential between the target 42 and the substrate 52. Further, since the output voltage value of each of the positive and negative voltage sources 92, 94 is variable, the target 42 can be set to a desired potential. By giving a predetermined potential to the target 42 by the voltage sources 92, 94, it is possible to control, of laser induced plasma generated by laser light 32, only the charged particles of the material emitted in a predetermined direction selected by the opening 62 of the shielding plate 60. Specifically, if the potential of the target 42 is positive, ions emitted from the target 42 and passed through the shielding plate 60 are accelerated by the electromagnetic field created between the target 42 and the substrate 52. Reversely, if the potential of the target 42 is negative, the ions passed through the shielding plate 60 are decelerated. Further, creating such field varies the acceleration depending on the number of charge and mass of ions to vary the spatial and timewise distribution of charged particles in the emitted material. The velocity, order and quantity of ions when reaching the substrate 52 vary depending on whether or not they are ions and on the number of charge and mass of ions. By varying the potential of the target 42, it is possible to control the property, e.g. crystallinity, of the film deposited on the substrate 52. At that time, the potential of the shielding plate 60 is optional, and the function of the electromagnetic field lens as well as the selective transmission means may be added. Further, the number of openings or cylindrical tubes constituting the shielding plate 60 are not limited to the illustrated examples and may be settable according to the situation. Also the shape of the opening should by no means be limited to a circle as illustrated. Thus, this third embodiment features that a predetermined voltage is irradiated between the target and the substrate and that the velocity, kind and quantity of the material are selected according to the chemical state of the material that is emitted in a predetermined direction. Experiment The experiment was conducted under the following conditions, using the apparatus of the third embodiment. In this experiment, the target 42 was tungsten (W); the substrate 52, glass; the laser 30, KrF excimer laser (wavelength of 249 nm, pulse width of 16 nsec, pulse energy of 250 mJ); the degree of vacuum inside the airtight chamber 10, less than 1.33 x 10 -3 Pa (1x10 -5 Torr); the repeating period of pulse laser, 25 pulses/sec; the angle of irradiation of the laser light over the target 42, 45°; the total pulse number, 30,000; the area over which laser light is irradiated to the target 42, 6x10 -3 cm 2 ; the rotational velocity of the target 42, 20 rpm; the temperature of the target 42, room temperature; the temperature of the substrate 52, room temperature; and the distance between the target 42 and the substrate 52, 30 mm. Further, the opening 62 of the shielding plate 60 was 5 mm; the distance between the substrate 52 and the shielding plate 60, 1 mm; and the potential of the shielding plate 60, the ground. Under the above condition, by giving the potential of -1 kV to 1 kV to the target 42, the velocity and quantity of the charged particles in the selected and transmitted material were controlled. The results of X-ray diffraction of the tungsten deposited film obtained by this experiment are shown in FIG. 10. If no voltage is irradiated to the target 42, the tungsten film is high in crystallinity. But, when the potential of the target 42 was negative and its voltage was gradually increased, the crystallinity of the tungsten deposited film was gradually lowered. When the potential was -1 kV, it was non-crystalline. Reversely, when the potential of the target 42 was positive and was gradually increased, the crystallinity came improving up to about 300 V. Beyond 300 V, the grain size of the crystal was reduced. In this experiment, the temperature of the substrate 52 was room temperature. If the temperature of the substrate 52 was kept at 500°C, the film deposited on the substrate 52 became crystalline as the potential of the target 42 was in the range of -3 kV to 3 kV. As described above, by applying a voltage between the target 42 and the substrate 52 and controlling laser induced plasma, it is possible to control the crystal structure of the deposited film formed on the substrate 52. Further, since the property of a tungsten film is very dependent on its crystal structure, it is possible to obtain different kinds of films having various properties. For example, by reducing the crystal grains in size, it is possible to increase the degree of hardness of a film so that a film suited for abrasion-resistant and heat-resistant coating. In addition, improving the cystallinity means realizing a characteristic more suited for wiring materials. Fourth Embodiment FIG. 11 shows a fourth embodiment in which the velocity filter of the second embodiment and the irradiated-voltage control means of the third embodiment are used. According to the fourth embodiment, it is possible to select only the material which is emitted in a predetermined direction and at a predetermined velocity, and to control the velocity, order and quantity of the charged particles which reach the substrate. Therefore, the conditions for forming the film by deposition can be set in detail, and the construction of the film can be widely controlled.

Claims: A laser deposition method comprising: a) placing a target ( 42 ) and a substrate ( 52 ) in a chamber ( 10 ) which interior is kept at a reduced pressure; b) focusing laser light ( 32 ) and then irradiating it to said target ( 42 ) to cause an emitting material composed of singly and multiply charged ions, electrons and neutral atoms to emit from said target ( 42 ) and to generate laser induced plasma; and c) depositing selected emitting material on said substrate ( 52 ), characterized by the step of d) placing a shielding plate ( 60 ) in front of of said substrate ( 52 ), and providing said shielding plate ( 60 ) with an opening ( 62 ) the position and largeness of which is determined by the emitting direction of said emitting material, such that only an emitting material, composed of singly and multiply charged ions, electrons and neutral atoms, emitted to a desired direction is selected, so as to select a desired particle ratio of the components of said emitting material. A laser deposition method according to claim 1, characterized by disposing said opening ( 62 ) to select only an emitting material emitted in a direction of a solid angle of 0.022 sr with the normal to a target surface of said target ( 42 ), a laser radiating point at said target surface being the center of said solid angle. A laser deposition method according to claim 1, further characterized by selecting, from said emitting material emitted from said target ( 42 ), a part that is emitted only at a predetermined velocity. A laser deposition method according to claim 3, further characterized by disposing a velocity selecting means ( 80 ) in said traveling path of said emitting material for selecting from said emitting material emitted from said target ( 42 ) a part that is emitted at a predetermined velocity, providing said velocity selecting means ( 80 ) with a filter through which said emitting material is allowed to pass only for a predetermined period of time, and irradiating pulsed laser light ( 32) to said target ( 42 ). A laser deposition method according to claim 4, characterized by providing said filter with a plate ( 84 ) having a predetermined opening ( 86 ) and with a motor ( 82 ) for angularly moving said plate ( 84 ), and disposing said filter in said traveling path of said emitting material during said predetermined period of time such that said emitting material is allowed to pass therethrough only for said predetermined period of time. A laser deposition method according to any of the preceding claims, characterized by mounting said target holder ( 46 ) fixedly on a rotary table ( 40 ) which is angularly movable to vary the angle of irradiation of said laser light ( 32 ) to said target ( 42 ). A laser deposition method according to claim 1, further characterized by providing an emitting material controlling means for controlling the velocity of said emitting material emitted from said target ( 42 ). A laser deposition method according to claim 7, characterized by providing, as said emitting-material controlling means, a voltage applying means ( 90,92,94 ) for applying a predetermined D.C. voltage between said target ( 42 ) and said substrate ( 52 ). A laser deposition method according to claim 8, characterized in that said voltage applying means ( 90,92,94 ) is capable of varying said predetermined D.C. voltage to be applied. A laser deposition method according to claim 1, further characterized by disposing a velocity selecting means ( 80 ) in said traveling path of said emitting material for selecting, from said emitting material emitted from said target ( 42 ) a part that is emitted at a predetermined velocity, and fixedly mounting said target holder ( 46 ) on a rotary table ( 40 ) which is angularly movable to vary the angle of irradiation of said laser light ( 32 ) to said target ( 42 ). A laser deposition method according to claim 1, characterized in that said target ( 42 ) comprises tungsten. A laser deposition method according to claim 1, characterized in that said target ( 42 ) is a separation formed of copper and iron. A laser deposition method according to claim 1, characterized in that said laser light ( 32 ) to be irradiated to said target ( 42 ) is pulsed laser light. A laser deposition method comprising: a) placing a target ( 42 ) and a substrate ( 52 ) in a chamber ( 10 ) which interior is kept at a reduced pressure; and b) focusing laser light ( 32 ) and then irradiating it to said target (42) to cause an emitting material to emit from said target ( 42 ) and to generate laser induced plasma in an atmosphere, and c) depositing selected emitting material on said substrate ( 52 ), d) disposing in said traveling path of said emitting material a velocity selecting means ( 80 ), characterized by e) providing said velocity selecting means ( 80 ) with a plate ( 84 ) having a predetermined opening ( 86 ) and angularly moving said plate ( 84 ) such that said emitting material is allowed to pass through said opening ( 86 ) only for a predetermined period of time in order to select from said emitting material emitted from said target ( 42 ) a part that is emitted only at a predetermined velocity. A laser deposition method according to claim 14, characterized by providing said velocity selecting means ( 80 ) with a second plate ( 106 ) having a predetermined opening ( 108 ) and being arranged behind the first plate ( 84 ), and angularly moving said second plate ( 106 ) with the same or a multiple of the revolution number of said first plate ( 84 ). A laser deposition apparatus comprising: a) a chamber ( 10 ) formed airtightly for keeping its interior at a reduced pressure; b) a target holder ( 46 ) disposed in the interior of said chamber for holding a target ( 42 ); c) a laser ( 30 ) for outputting laser light ( 32 ); d) a focusing means ( 34 ) for focusing said laser light ( 32 ) from said laser ( 30 ) to irradiate said focused laser light to said target ( 42 ), so as to cause an emitting material to emit from said target ( 42 ) and so as to generate laser induced plasma; e) a substrate holder ( 50 ) for holding a substrate ( 52 ) on which said emitting material emitted from said target ( 42 ) is to be deposited; and f) a velocity selecting means ( 80 ) disposed in the traveling path of said emitting material, characterized in that g) said velocity selecting means ( 80 ) comprises a plate ( 84 ) having a predetermined opening ( 86 ) and a motor ( 82 ) for angularly moving said plate ( 84 ) such that said emitting material is allowed to pass through said opening ( 86 ) only for a predetermined period of time in order to select from said emitting material emitted from said target ( 42 ) a part that is emitted only at a predetermined velocity. A laser deposition apparatus according to claim 16, characterized by a second plate ( 106 ) having a predetermined opening ( 108 ) and being arranged behind the first plate ( 84 ), said second plate ( 106) being angularly rotated with the same or a multiple of the revolution number of said first plate ( 84 ). A laser deposition apparatus comprising: a) a chamber ( 10 ) formed airtightly for keeping its interior at a reduced pressure; b) a target holder ( 46 ) disposed in the interior of said chamber for holding a target ( 42 ); c) a laser ( 30 ) for outputting laser light ( 32 ); d) a focusing means ( 34 ) for focusing said laser light ( 32 ) from said laser ( 30 ) to irradiate said focused laser light to said target ( 42 ), so as to cause an emitting material composed of singly and multiply charged ions, electrons and neutral atoms to emit from said target ( 42 ) and so as to generate laser induced plasma; and e) a substrate holder ( 50 ) for holding a substrate ( 52 ) on which said emitting material emitted from said target ( 42 ) is to be deposited, characterized by f) a shielding plate ( 60 ) disposed on the front side of said substrate ( 52 ), said shielding plate ( 60 ) having an opening ( 62 ) disposed to select only an emitting material composed of singly and multiply charged ions, electrons and neutral atoms, emitted in a direction of a solid angle of 0.022 sr with the normal to a target surface of said target ( 42 ), a laser radiating point at said target surface being the center of said solid angle.

Inventors: AKIHAMA KAZUHIRO, KIZAKI YOSHIMI, TAKAYANAGI NOBORU, AKIHAMA, KAZUHIRO, KIZAKI, YOSHIMI, TAKAYANAGI, NOBORU
Applicants: TOYODA CHUO KENKYUSHO KK, TOYOTA MOTOR CO LTD, KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO, TOYOTA JIDOSHA KABUSHIKI KAISHA
Application year: 1990
Main classification: C23C14
IPC codes: C23C14