Differential input bicmos buffer-inverters and gates

Abstract: High speed and high drive BICMOS buffers, inverters, and gates receiving synchronous differential inputs are provided having at least two npn bipolar transistors and at least one nMOS transistor. The first bipolar transistor (120a) has a base receiving a noninverting input (V in ), a collector coupled to the high voltage rail (V HH ), and an emitter coupled to the circuit output (V out ). In several embodiments, the second bipolar transistor (128a) has its collector coupled to the emitter of the first bipolar transistor (120a), its emitter coupled to ground, and its base coupled to the source of an nMOS transistor (122a) which is receiving the inverting input ( V in ) at its gate. In these embodiments, the output is taken from the emitter of the first bipolar transistor (120a) and the collector of the second bipolar transistor (128a) with the first bipolar transistor pulling up when when the input is low. Also, in several of the embodiments, the first bipolar transistor (120a) is coupleed to a pMOS device (126a) with the collector connected to the source, and the emitter connected to the drain. the gate of the pMOS device is coupled to the inverting input ( V in ), sometimes via the emitter of another bipolar transistor having its base connected to the inverting input. the pMOS device (126a) acts to pull up the output voltage of the circuit from the voltage provided at the emitter of the first bipolar transistor (120a) to the voltage of the high voltage rail (V HH ).

Description: FIELD OF USE The present invention relates to devices utilizing bipolar and field effect transistors (FETs). More particularly, the present invention relates to BICMOS buffers, inverters, and gates which utilize complementary inputs and provide increased output drive at a buffered output. BACKGROUND ART The new technology of BICMOS which utilizes both bipolar and CMOS transistors in a single device has been increasingly explored in the past few years. The advantage of BICMOS circuits over conventional CMOS or bipolar circuits is that the high speed characteristic of bipolar circuits can be obtained with an integration density and low power consumption characteristic of CMOS circuits. Typical of BICMOS buffers, inverters and gates known in the art are the following patents and disclosures: U.S. Patent #4,558,234 to Suzuki et al.; U.S. Patent #4,638,186 to McLaughlin; U.S. Patent #4,649,294 to McLaughlin; U.S. Patent #4,733,110 to Hara et al.; EPO Publication 0212004; IBM TDB Vol. 29, #3, August 1986, p.1191; Japanese Patent applications 62-26691 to Miyaoka; 61-72904 to Ueno; and 60-117618 to Nakamura. Additional buffers, inverters and gates are disclosed in the following articles: Liang-Tsai Lin et al., "A 9100 Gate ECL/TTL Compatible BICMOS Gate Array", IEEE 1987 Custom Integrated Circuits Conference: pp. 190-194; P. Simon Bennett et al., "High Performance BIMOS Gate Arrrays with Embedded Configurable Static Memory", IEEE 1987 Custom Integrated Circuits Conference: pp.195-197; Yoji Nishio et al., "0.45ns 7K Hi-BICMOS Gate Array with Configurable 3-Port 4.6K SRAM", IEEE 1987 Custom Integrated Circuits Conference: pp.203-204; Chu et al., "A Comparison of CMOS circuit Techniques: Differential Cascode Voltage Switch Logic Versus Conventional Logic", IEEE Journal of Solid- State Circuits: Vol Sc-22, No. 4 (Aug. 1987); Masaharu Kubo, et al., "Perspective on BICMOS VLSI's", IEEE Journal of Solid-State Circuits; Vol. 23, No. 1 (Feb. 1988); Shih-Lien Lu, "Implementation of Iterative Networks with CMOS Differential Logic" IEEE Journal of Solid-State Circuits: Vol. 23, No. 4 (Aug. 1988). EP-A-0-058 958 (TOKYO SHIBAURA) shows BICMOS logic gates without differential inputs. EP-A-0 209 805 also shows BICMOS logic gates without differential inputs. Common to almost all of the above disclosures is that either a single input, or non-differential multiple inputs are utilized as inputs into the circuits, or that a non-synchronous differential input is utilized. It is an object of the invention to provide differential input, differential output BICMOS buffers, inverters and gates. It is yet another object of the invention to provide differential input, differential output BICMOS buffers and inverters which are cascadable. It is still another object of the invention to provide high drive differential input buffers and inverters with only one transistor delay. To meet the objects of the invention, there is provided an electronic circuit comprising: input means with a first output terminal for providing a first logic output signal and a second output terminal for providing a second logic output signal, the first and the second logic output signals being complementary; a first bipolar transistor having a base coupled to the first output terminal of the input means, a collector coupled to a first voltage reference rail, and an emitter; a second bipolar transistor, having a collector coupled to the emitter of the first bipolar transistor, an emitter coupled to a second voltage reference rail, and an base; a first MOS transistor, having a drain, a source coupled to the base of the second bipolar transistor, and a gate coupled to the second output terminal of the input means; and a first input terminal for receiving a first logic input signal and a second input terminal for receiving a second logic input signal, the first and the second logic input signals being complementary. In the embodiments, a circuit output is taken from a node at the emitter of the first bipolar transistor and the collector of the second bipolar transistor. Also, in addition, the first bipolar transistor may be coupled to a pMOS device with the collector connected to the source, and the emitter connected to the drain. The pMOS device acts to pull up the output voltage of the circuit from the voltage provided at the emitter of the first bipolar transistor to the voltage of the high voltage rail. Where the pMOS device is provided, the circuit is a cascadable circuit in that voltage drive at the output is not decreased by one Vbe for each stage. Additional embodiments include the aforementioned circuitry plus duplicative circuitry which is arranged such that the noninverted input signal is received at the gate electrodes and bases of transistors corresponding to transistors where the inverted input signal is received by the aforementioned circuitry, and vice versa. In most of these embodiments, a complementary output is obtained, with the noninverting output signal obtained from the emitter of a bipolar transistor of the "original" circuit, and the inverting output signal obtained from the emitter of a bipolar transistor of the duplicative circuit. In accord with another aspect of the invention, npn transistors can be replaced with pnp tranistors; in which case the polarities of the nMOS and pMOS devices are reversed along with the polarities of the voltage rails. If desired, where duplicative circuitry is employed, the duplicative circuitry can employ transistors of opposite polarity to the original circuitry. Additional objects and advantages of the invention will become evident upon reference to the detailed description in conjunction with the provided drawings. BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a circuit diagram of a complementary inputs BICMOS buffer having complementary outputs. Figure 2 is a circuit diagram of a cascadable complementary inputs, complementary outputs BICMOS buffer/inverter; Figure 3 is a circuit diagram of another cascadable complementary inputs, complementary outputs BICMOS buffer/inverter; Figures 4a and 4b are circuit diagrams of complementary two value input BICMOS gates having a single output (OR/NAND) and complementary outputs (OR/NAND, NOR/AND) respectively; and Figure 5 is a circuit diagram of a complementary two value input BICMOS gate having two single ended outputs. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Before describing the circuits shown in the Figures, it should be understood that for purposes of this application, the term "BICMOS" is used in its broadest sense to refer to circuits having both bipolar transistors and FETs, regardless of whether MOSFETs or other types of IGFETs are used or whether both p-channel and n-channel type MOS transistors are utilized in a single circuit. In fact, any description of a transistor as a MOS transistor is intended to be understood in its broadest sense to include other types of IGFETs and not to be limited to metalgate FETs. Also, it should be understood that while the circuits are described as preferably including npn bipolar transistors, if the polarities of the bipolar and MOS transistors are reversed, equivalent functional circuits are obtained. Further, it will be appreciated that while "inputs" and "outputs" to and from the circuit are described, little distinction is provided regarding whether the inputs or outputs are signals or nodes, as those skilled in the art will readily appreciate whether a signal or node is being described. Figure 1 provides a differential input buffer. Buffer 110b receives complementary input signals (V in , V in ) from input circuit 111b. Buffer 110b includes npn bipolar transisistors 120b-1 and 128b-1, and MOS transistors 122b-1 and 124b-1. Transistor 126b-1 has its source connected to the collector of transistor 120b-1, its drain connected to the emitter of transistor 120b-1, and its gate electrode connected to the inverting input V in . When input V in is high and input V in low, bipolar transistor 120b-1 turns on quickly, while pMOS transistor 126b-1 turns on a little more slowly. Because the source of transistor 126b-1 is connected to the high voltage rail, transistor 126b-1 pulls the voltage at its drain from V in - V be (which is the voltage at the emitter of transistor 120b-1 when the V in input is at the high input voltage V in ) all the way up to V HH . Because the output voltage swings all the way up to V HH , the circuit of Figure 1 can be used in series without a progressive degradation in the high output voltage. Turning to Figure 2, an embodiment of a differential buffer/inverter is provided. Again an input circuit 211 is shown receiving the V 0 input 213, and the V 0 input 215, and providing complementary outputs over lines 217 and 219 with the noninverting signal V in , and the inverting signal V in . The V in signal from circuit 211 serves as the noninverting input into buffer 210 and is fed to the base of bipolar transistor 220-1. Bipolar transistor 220-1 has a collector coupled to the high voltage rail, and an emitter coupled to the noninverting output of the buffer circuit. Coupled to transistor 220-1 is a pMOS transistor 261-1 with its source coupled to the collector of transistor 220-1 and its chain coupled for the emitter of transistor 220-1. Also coupled to the emitter of transistor 220-1 is the drain of nMOS transistor 263-1. Transistor 263-1 is provided with the inverting input V in at its gate electrode, and has its source coupled to the low voltage rail. Buffer 210 also includes another set (i.e. duplicative set) of transistors, including bipolar transistor 220-2, pMOS transistor 261-2, and nMOS transistor 263-2. The base of transistor 220-2 is coupled to the inverted input V in , while the collector of transistor 220-2 is coupled to the high voltage rail, and the emitter is coupled to the inverting output V out . P-channnel type MOS transistor 261-2 is coupled to bipolar transistor 220-2 with its source coupled to the collector of transistor 220-2 and its drain coupled to the emitter of transistor 220-2. The gate electrode of transistor 261-2 is coupled to the emitter of transistor 220-1 and the drain of transistor 261-1, while the emitter of transistor 220-2 and drain of transistor 261-2 are coupled to the gate electrode of transistor 261-1. Transistor 263-2 is provided with input V in at its gate. The drain of transistor 263-2 is coupled to the emitter of transistor 220-2, and the source of transistor 263-2 is coupled to the low voltage rail. With the provided arrangement, when V in is high ( V in low), transistor 220-1 turns on quickly and pulls the noninverting output V out to V in - V be . similarly, transistor 263-2 turns on, pulling its drain, and the gate electrode of pMOS transistor 261-1 to V LL . Thus, pMOS transistor 261-1 turns on and pulls output V out up to V HH , much in the same way as described above with reference to Figure 1. Also, with V in high, as aforementioned, transistor 263-2 is turned on, pulling its drain and hence the inverting output V out of the complementary output low to the voltage V LL at its source. When V in is high, the inverting signal V in applied to the base of transistor 220-2 and the gate electrode of transistor 263-1 is low and turns transistors 220-2 and transistor 263-1 off. with transistor 220-2 off, the inverting output voltage V out at the emitter of transistor 220-2 is tree to be controlled by transitor 263-2. Similarly, with transistor 263-1 off, the noninverting output voltage V out at the drain of transistor 263-1 is free to be controlled by transistors 220-1 and 261-1. It is also noted that with V in high, and the voltage at the drain of transistor 261-1 high, transistor 261-2 is off and does not try to pull the voltage high at the inverting output of the circuit. When V in goes low and V in goes high, the voltage at the base of transistor 220-1 and gate electrode of transistor 263-2 go low turning off those transistors, while the voltage at the base of transistor 220-2 and gate electrode of transistor 263-1 go high, turning on those transistors. With transistor 220-2 on, and transistor 263-2 off, the voltage at the emitter of transistor 220-2 goes to V in - V be , while with transistor 220-1 off and transistor 263-1 on, the voltage at the emitter of transistor 220-1 (i.e. at the drain of transistor 263-1) goes to V LL . Since the drain of transistor 261-2 is coupled to the emitter of transistor 220-2, transistor 261-2 turns on and pulls the voltage at the emitter of transistor 220-2 (and hence at the inverting output V out ) up to V HH . Thus, the outputs V out and V out are inverted from when V in is high and V in is low. The buffer/inverter embodiment of Figure 3 combines aspects of the buffer/inverters of Figures 1 and 2, and is hereinafter described with like parts indicated by numbers one hundred and two hundred removed from their counterparts. The buffer/inverter 310 of Figure 3 includes the bipolar transistors 320-1 and 320-2 whose bases are coupled to the complementary inputs, and pMOS transistors 361-1 and 361-2 which are coupled to the bipolar transistors and which provide the same features discussed above with reference to Figure 2. Further, buffer 310 has additional npn bipolar transistors 328-1 and 328-2, and additional nMOS transistors 322-1, 322-2, and 324-1, and 324-2. When V in goes high ( V in low), bipolar transistor 320-1 turns on and bipolar transistor 320-2 turns off, MOS transistors 324-1 and 322-2 turn on, and MOS transistors 322-1 and 324-2 turn off. As a result of MOS transistor 324-1 turning on, bipolar transistor 328-1 is off. With bipolar transistor 328-1 off and bipolar transistor 320-1 on, the noninverting output V out is brought high to V in - V be . Also, with MOS transistor 322-2 on and MOS transistor 324-2 off, bipolar transistor 328-2 is turned on. With bipolar transistor 328-2 on and bipolar transistor 320-2 off, the inverting output V out is brought low to V LL + V be . With the voltage at the collector of transistor 328-2 coupled to the gate electrode of pMOS transistor 361-1 and being low, pMOS transistor 361-1 turns on and boosts the noninverting output V out up to V HH . Similarly, the high voltage output of V out is coupled to the gate of pMOS transistor 361-2 thereby keeping transistor 361-2 off and the voltage at the inverting output V out low. When the polarities of V in and V in switch, those transistors which were on turn off and vice versa. Thus, bipolar transistor 328-1 pulls the noninverting output V out low, while bipolar transistor 320-2, and then pMOS tranistor 361-2 pulls the inverting output V out high. Before turning to Figures 4a and 4b, it should be appreciated that the buffers of Figures 1, 2 and 3 are all candidates for cascading; i.e. the complementary output of each may be fed as a differential input to any other differential input buffer. Among other reasons, cascading of buffers is desirable for providing an extremely fast delay line, with taps taken from the output of each stage. In such a situation it is preferable that each of the cascaded buffers be identical. Also, increased drive is obtained by cascading buffers in a "tree" arrangement, with the outputs of a first buffer being fed as inputs to a plurality of parallel buffers. Turning to Figure 4a, OR/NAND gate 410a which is related to the buffer of Figure 1 is provided. Thus, npn bipolar transistors 420a and 428a as well as nMOS transistors 422a and 424a are provided. The collector of transistor 420a is coupled to the high voltage rail, the base is coupled to the input signal V ina , and the emitter is coupled to the collector of transistor 428a. The emitter of transistor 428a is coupled to the low voltage rail, while the base is coupled to the drain of transistor 424a and the source of transistor 422a (via transistor 493a). The gates of transistors 422a and 424a are respectively coupled to the inverting and noninverting inputs V ina and V ina . OR gate 410a includes a bipolar transistor 491a, and two nMOS transistors 493a and 495a. Bipolar transistor 491a is coupled in parallel with transistor 420a, except that its base is coupled to the noninverting input V inb of a second complementary input. MOS transistor 493a is provided with its gate electrode coupled to the inverting input V inb , and with a drain coupled to the emitter of transistor 420a (via transistor 422a) and a source coupled to the drain of MOS transistor 424a. MOS transistor 495a is coupled in parallel with MOS transistor 424a, except that its gate is coupled to the noninverting V inb input. If either the V ina and/or V inb inputs go high, one or both of transistors 420a and 491a turn on, and one or both of transistors 424a and 495a also turn on. Also, one or both of transistors 422a and 493a turn off, and bipolar transistor 428a is off, as the voltage at the base thereof is brought to V LL by either transistor 424a or 495a. In such a state, and with bipolar transistor 428a off, the output voltage V out goes high as the output voltage follows the emitter of one of transistors 420a and 491a. Similarly, if both the V ina and V inb inputs go low, transistors 420a, 491a, 424a, and 495a turn off, while transistors 493a and 422a turn on. With transistors 491a and 424a off, and transistors 493a and 422a on, bipolar transistor 428a turns on. With transistor 428a on, and transistors 420a and 491a off, the output V out is pulled low. It will be appreciated by those skilled in the art that OR gate 410a functions equivalently as a NAND gate in accord with DeMorgan's theorem by reversing the V ina input with the V ina input, and the V inb input with the V inb input. A complementary output embodiment of the OR/NAND gate of Figure 4a is seen in Figure 4b where differential inputs V ina , V ina , and V inb , V inb are provided on lines 417bA, 419bA, and 417bB and 419bB, and npn transistors 420b-1, 428b-1 and 491b-1 and nMOS transistors 422b-1, 424b-1, 493b-1, and 495b-1 function identically as their equivalents in Figure 4a to provide an OR/NAND function at the non-inverted output V out . In addition, pnp transistors 420b-2, 428b-2, and 491b-2, and pMOS transistors 422b-2, 424b-2, 493b-2 and 495b-2 are provided and produce a NOR/AND output at the inverted output V out of the complementary output. As will readily be appreciated, the pnp and pMOS transistors of the -2 section of the circuit are arranged identically to the npn and nMOS transistors of the -1 stage, except that the polarity of the inputs 417bA, 419bA, 417bB and 419bB, and the polarity of the voltage rails are reversed. With the arrangement of Figure 4b, when one (or both) of V ina and V inb are high, one or both of V ina and V inb are low, and therefore, one or both of pnp transistors 420b-2, and 491b-2 (and correspondingly pMOS transistors 424b-2 and 495b-2) are turned on. With one or both of transistors 420b-2 and 491b-2 on, the inverted output V out is pulled low (i.e. to V in + V be ). Also, with one or both of transistors 424b-2 and 495b-2 on, the voltage at the base of transistor 428b-2 is brought high, and transistor 428b-2 is kept off such that it does not attempt to pull the voltage at the inverted output high. Conversely, if both V ina and V inb are low, both V ina and V inb are high, and pnp transistors 420b-2, 491b-2 and pMOS transistors 424b-2 and 495b-2 turn off, while pMOS transistors 422b-2 and 493b-2 turn on. With transistors 422b-2 and 493b-2 on, and 424b-2 and 495b-2 off, pnp transistor 428b-2 turns on. With pnp transistor 428b-2 on, and transistors 420b-2 and 491b-2 off, the inverted output V out is pulled high. It is therefore seen that V out is high only when V ina and V inb are low, and is low when either V ina or V inb is high; a classical NOR gate. As with the noninverted output which is changed from an OR function to a NAND function, by reversing the V ina and V ina inputs 417bA and 419bA and V inb and V inb inputs 417bB and 419bB, the inverted output V out is changed from a NOR to an AND function with such a reversal. The logic gate of Figure 5 incorporates the circuitry of Figure 4a, along with duplicative circuitry which receives inverted inputs and which provides a second single ended output V out ,. The second single ended output V out , does not together with the first output V out provide a complementary output, as the second single ended output is not the inverse of the first single ended output. As seen in Figure 5, the OR gate of Figure 4a is set forth with bipolar transistors 520a, 528a, and 591a, and with nMOS transistors 522a, 524a, 593a, and 595a. Also, duplicative bipolar transistors 520b, 528b, and 591b, and nMOS transistors 522b, 524b, 593b, and 595b are provided. As indicated above in the discussion regarding Figure 4a, an OR function is provided at the emitters of transistors 520a and 591a. Also, as indicated above in the discussion regarding Figure 4b, and the ability to change an OR into a NAND gate by reversing the inputs, it will be appreciated that a NAND function is provided at the emitters of transistors 520b and 591b, as the voltage V out' only goes low when both V ina and V inb are both high. There has been described and illustrated herein complementary input BiCMOS buffer, inverters, and gates. While particular embodiments have been described, it is not intended that the invention be limited thereto as it is intended that the invention be broad in scope as the art will allow. Thus, for example, while nMOS transistors were used in most of the buffer and inverter embodiments to cause the base at the lower bipolar transistor of the two bipolar transistor arrangement to quickly reach the voltage of the low voltage rail (i.e. a hard pull off the base), it will be appreciated that a resistor could be substituted for that transistor. Alternatively, that transistor can be eliminated entirely from the circuit, although current leakage could result. Also, while a two complementary input OR/NAND (and NOR/AND) gate was shown, it will be appreciated that gates having as many complementary inputs as desired can be constructed by providing additional bipolar transistors with bases connected to additional (e.g. "V inc " and "V ind " inputs) in parallel with the bipolar transistors having the V ina and V inb input signals connected to their bases, and by providing additional MOS transistors with inverting V inc and V ind gate inputs in series with the MOS transistors having the V ina and V inb inputs to their gates, and further by providing additional MOS transistors with V inc and V ind gate inputs in parallel with the parallel MOS transistors with V ina and V inb gate inputs. Further, while use of npn bipolar transistors was disclosed in conjunction with advantageous location of nMOS and pMOS transistors, it will be appreciated that pnp bipolar transistors as well as substitution of pMOS for nMOS transistors and vice versa could be effectively utilized with minor changes which could be apparent to those skilled in the art. Therefore, it will be appreciated by those skilled in the art that yet other modifications could be made without deviating from its spirit and scope as so claimed.

Claims: An electronic circuit comprising: input means (311) with a first output terminal (Vin) for providing a first logic output signal (Vin), and a second output terminal ( V in) for providing a second logic output signal ( V in), the first and the second logic output signals (Vin, V in) being complementary; a first bipolar transistor (320-1) having a base coupled to the first output terminal (Vin) of the input means (311), a collector coupled to a first voltage reference rail (V HH ), and an emitter; a second bipolar transistor (328-1), having a collector coupled to the emitter of the first bipolar transistor (320-1), an emitter coupled to a second voltage reference rail (V LL ), and an base; a first MOS transistor (322-1), having a drain, a source coupled to the base of the second bipolar transistor (328-1), and a gate coupled to the second output terminal ( V in) of the input means (311), characterized in that the input means (311) further comprises a first input terminal (Vo) for receiving a first logic input signal (Vo) and a second input terminal ( V o) for receiving a second logic input signal ( V o), the first and the second logic input signals (Vo, V o) being complementary. A circuit as in claim 1, characterized in that the drain of the first MOS transistor (322-1) is coupled to the emitter of the first bipolar transistor (320-1). A circuit as in claim 2, further comprising: a third bipolar transistor (320-2) having a base coupled for the second output terminal ( V in ), a collector coupled to the first rail (V HH ), and an emitter; a fourth bipolar transistor (328-2) having a base, a collector coupled to the emitter of the third bipolar transistor (320-2), and an emitter coupled to the second rail (V LL ); a second MOS transistor (322-2) having a gate electrode coupled to the first output terminal (V in ), a drain coupled to the emitter of the third bipolar transistor (320-2), and a source coupled to the base of the fourth bipolar transistor (328-2), the first and second MOS transistors being of a first MOS type; a third MOS transistor (361-1), having a gate electrode coupled to an inventing output terminal ( V out ) of the electric circuit, a source coupled to the first rail (V HH ), and a drain coupled to the emitter of the first bipolar transistor (320-1); and a fourth MOS transistor (361-2) having a gate electrode coupled to a noninventing output terminal (V out ) of the electric circuit, a source coupled to the first rail (V HH ), and a drain coupled to the emitter of the third bipolar transistor (320-2), the third and fourth MOS transistors being of a second MOS type opposite to the first MOS type, the noninventing output terminal (V out ) and the inventing output terminal ( V out ) of the electronic circuit being coupled respectively for the emitters of the first (320-1) and third bipolar transistors. A circuit as in claim 3 wherein the bipolar transistors (320-1, 320-2, 328-1, 328-2) are of a first bipolar type, the first MOS type is nMOS when the first bipolar type is npn, and the first MOS type is pMOS when the first bipolar type is pnp. A circuit as in claim 4 further comprising: a fifth MOS transistor (324-1) having a gate electrode responsive to the noninverting input (V 0 ), a drain coupled to the source of the first MOS transistor (322-1), and a source coupled to the second rail (V LL ); and a sixth MOS transistor (324-2) having a gate coupled to the first output terminal (V in ), a drain coupled to the source of the second MOS transistor (322-2), and a source coupled to the second rail (V LL ), the fifth and sixth MOS transistors being of the first MOS type. A circuit as in claim 5, characterized in that the gate of the third MOS transistor (361-1) is coupled to the source of the third bipolar transistor (320-2), the gate of the fourth MOS-transistor (361-2) is coupled to the source of the first bipolar transistor (320-1), the gates of the first (322-1) and the sixth (324-2) MOS transistors are coupled to the base of the third bipolar transistor (320-2); and the gates of the third (322-2) and the fifth (324-1) MOS transistors are coupled to the base of the first bipolar transistor (320-1). A circuit as in claim 6 wherein the bipolar transistors (320-1, 320-2, 328-1, 328-2) are of a first bipolar type, the first MOS type is nMOS when the first bipolar type is npn, and the first MOS type is pMOS when the first bipolar type is pnp. A circuit as in claim 1 comprising: second input means (411aB) with a third output terminal (Vinb) for providing a third logic output signal (Vinb), and a fourth output terminal ( V inb) for providing a fourth logic output signal ( V inb), the third and the fourth logic output signals (Vinb, V inb) being complementary; a third input terminal (Vob) for receiving a third logic input signal (Vob) and a fourth input terminal ( V ob) for receiving a fourth logic input signal ( V o), the third and the fourth logic input signals (Vob, V ob) being complementary; a noninverting output (Vout) coupled to the emitter of the first bipolar transistor (420a); a third bipolar transistor (491a) having a base coupled to the third output terminal (Vinb), a collector coupled to the collector of the first bipolar transistor (420a), and an emitter coupled to the emitter of the first bipolar transistor (420a); a second MOS transistor (422a) having a gate coupled to the second output terminal ( V ina), a drain coupled to the emitter of the first bipolar transistor (420a), and a source; and that the gate of the first MOS transistor (493a) is coupled to the fourth output terminal ( V inb), and the drain of the first MOS transistor (493a) is coupled to the source of the second MOS transistor (422a). A circuit as in claim 8 further comprising: a third MOS transistor (424a) having a gate electrode coupled to the first noninverting output terminal (V ina ) input (V oa ), a drain coupled to the base of the second bipolar transistor (428a), and a source coupled to the second rail (VLL); and a fourth MOS transistor (495a) having a gate electrode coupled to the third output terminal (V inb ), a drain coupled to the base of the second bipolar transistor (428a), and a source coupled to the second rail (V LL ). A circuit as in claim 9 wherein the MOS transistors (422a, 493a, 424a, 495a) are all of a first MOS type, the bipolar transistors (420a, 491a, 428a) are of a first bipolar type, the first MOS type is nMOS when the first bipolar type is npn, and the first MOS type is pMOS when the first bipolar type is pnp. A circuit as in claim 9 further comprising: a fourth bipolar transistor (420b-2) having a base coupled to the second output terminal ( V ina ), a collector coupled to the second rail (V LL ), and an emitter coupled to the inventing output terminal ( V out ) a fifth bipolar transistor (491b-2) having a base coupled to the fourth output terminal ( V inb ), a collector coupled to the second rail (V LL ), and an emitter coupled to the emitter of the fourth bipolar transistor (420b-2). a sixth bipolar transistor (428b-2) a base, a collector, coupled to the emitter of the fourth bipolar transistor (420b-2), and an emitter coupled to the first rail (V HH ); a fifth MOS transistor (422b-2) having a gate electrode coupled to the first output terminal (V ina ), a drain, and a source; a sixth MOS transistor (493b-2) having a gate electrode coupled to the third output terminal (V inb ), a drain, and a source, the two MOS transistors (422b-2, 493b-2) being arranged in series such that the drain and the source of one are respectively coupled to the emitter of the fourth bipolar transistor (420b-2) and to the drain of the other whose source is coupled to the base of the third pnp transistor; a seventh MOS transistor (424b-2) having a gate electrode coupled to the second output terminal ( V ina ), a drain coupled to the base of the sixth bipolar transistor (428b-2), and a source coupled to the first rail (V HH ); and a eighth MOS transistor (495b-2) having a gate electrode coupled to the fourth output terminal ( V inb ), a drain coupled to the base of the sixth bipolar transistor (428b-2), and a source coupled to the first rail (V HH ). A circuit as in claim 11 wherein the first (493b-1), the second (422b-1), the third (424b-1), and the fourth (495b-1) MOS transistors are of a first MOS type; the first (420b-1), the second (428b-1), and the third (491b-1) bipolar transistors are of a first bipolar type; the fifth (422b-2), the sixth (493b-2), the seventh (424b-2), and the eight (495b-2) MOS transistors are of a second MOS type; the fourth (420b-2), the fifth (491b-2), and the sixth (428b-2) bipolar transistors are of a second bipolar type; the first MOS type in nMOS when the first bipolar type is npn, and the first type is pMOS when the first bipolar type is pnp. A circuit as in claim 10 further comprising: circuitry being a duplicate of the circuitry constituted by the first (520a), the second (528a), and the third (591a) bipolar transistors; and the first (593a), the second (522a), the third (524a), and the fourth (595a) MOS transistors; a duplicated non inverting output terminal (Vout') coupled to the emitters of the corresponding bipolar transistors of the duplicated circuitry; and input terminals of the duplicated circuitry, with regard to the non duplicated circuitry, inversely responsive to the non inverting (Voa,Vob) and the inverting ( V oa, V ob) input terminals A circuit as in claim 13 wherein the MOS transistors are all of a first MOS type, the bipolar transistors are of a first bipolar type, the first MOS type is nMOS when the first bipolar type is npn, and the first MOS type is pMOS when the first bipolar type is pMOS.

Inventors: BURTON EDWARD, FLETCHER THOMAS, BURTON, EDWARD, FLETCHER, THOMAS
Applicants: KONINKL PHILIPS ELECTRONICS NV, KONINKLIJKE PHILIPS ELECTRONICS N.V.
Application year: 1990
Main classification: H03K19
IPC codes: H03K19, H03K17