LASER SOURCE

Abstract: An hybrid laser source has a ring structure including the optical path in a semiconductor amplifier chip(1) and optical fibres (2, 3 and 4). The fibre (2) is rare-earth doped and provides an additional gain medium in the ring, the chip providing its own gain medium. The two gain media are interactive and when the chip input current is-modulated the source produces relatively high peak power ultrashort pulses.

Description: This invention relates to laser sources and in particular to those incorporating rare earth doped fibre, for example erbium doped fibre. According to the present invention there is provided an hybrid laser source comprising a semiconductor diode amplifier chip and a length of rare-earth-doped single mode optical fibre, the optical path within the chip forming part of a ring and another part of the ring being comprised by said fibre, which fibre provides an external cavity having distributed gain for the chip. Embodiments of the invention will now be described with reference to the accompanying drawings, in which:- Fig. 1 illustrates a doped fibre ring laser according to an embodiment of the present invention and Fig. 2 illustrates the streak intensity profiles of pulses produced by an arrangement according to Fig, 1. It has previously been proposed to employ erbium-doped fibre as a fibre amplifier. An optical signal input to one end of a length of erbium-doped fibre can be amplified during its passage therealong. In our GB Patent Application No. 8909671.3 (GB-A-2231169) (K.C. Byron - W. Sibbett 38-3) there is described a tuneable source employing such a length of fibre. It has also been proposed in our paper "Amplification of mode-locked semiconductor diode laser pulsers in an erbium-doped fibre amplifier" [R.A. Baker, D. Burns, K.C. Byron, W. Sibbett. Electronic Letters IEE 17th August 1989, Vol. 25 No. 17 p 1131-3] to amplify picosecond pulses, from an actively mode-locked semiconductor diode laser having an external cavity, in a pumped erbium-doped fibre amplifier. In this case the output of the external-cavity laser was applied to one end of the fibre amplifier and the pump was applied to the other end, the output being taken from adjacent the other end by means of a coupler. We now propose a laser configuration in which the amplifier fibre comprises an external fibre cavity of a semiconductor diode laser amplifier. In this proposed hybrid configuration the external fibre cavity provides access to distributed gain. An example of the configuration is illustrated in Fig. 1. An InGaAsP diode amplifier chip 1 is disposed in a ring cavity arrangement that includes a length 2 of rare-earth-doped, in particular erbium-doped, monomode optical fibre, and lengths 3 and 4 of monomode optical fibre. Couplers 5 and 6 serve to couple the ends of the erbium-doped fibre 2 to the fibre lengths 3 and 4. The diode amplifier chip may have its facets AR-coated or angled and AR coated. Emissions from the facets are directly coupled to fibre lengths 3 and 4. The erbium fibre is optically pumped by means 7, such as by a frequency-doubled (532nm) Nd:YAG laser or a titanium-sapphire laser operating at 980nm. In tests the length of the diode amplifier chip was 500 µm and that of the erbium-doped (300 ppm) fibre was 5m. It should be noted that this leads to laser dynamics that are quite specific. The ring-cavity scheme should not be regarded as simply a mode-locked diode laser operating in conjunction with a distributed amplifier. When the injection current to the diode amplifier chip 1 is modulated, the pulse evolution processes develop in the system as a whole so that both gain media (chip and erbium-doped fibre) play important and interactive roles. The system, therefore, has hybridised operational characteristics and as such it has the inherent ability to produce relatively high peak power ultrashort pulses with the potential for exceptionally low phase-noise properties. The combination of picosecond pulse durations, peak powers in the W regime and low phase noise suggest potential major importance of such sources in future optical systems. If the erbium-doped fibre is pumped by a strained-layer semiconductor diode laser that operates at 980nm, a particularly practical, compact and reliable digital optical source results. Fig. 2 illustrates the result obtained with the arrangement of Fig. 1 and the various parameters quoted above. The diode amplifier was injection current modulated at a frequency of 612 MHz. The time domain data of Fig. 2 confirms that high-quality picosecond pulses are produced by this arrangement. Specifically, the streak intensity profiles (linear intensity scale) in Fig. 2 indicate that the pulses are discrete and have deconvolved durations of the order of 5 ps. Using second harmonic generation auto-correlation measurements that offer better time resolution, the pulse durations were confirmed to be of the order of 4ps. The measured average laser power was in excess of 4mW which represents a peak pulse power of more than 1.5W. At this level of peak power, optical non-linearities in fibre (such as the Kerr effect referred to in GB Patent Application No. 8909671.3) and other waveguide structures can become significant and potentially exploitable. As will be appreciated from Fig. 1, the hybrid laser source has a ring structure comprised by the optical path within the chip 1 and the fibres 2, 3 and 4, and the fibre 2 provides an external cavity for the chip which has distributed gain. Such a source is high speed stable and may be modulated.

Claims: An hybrid laser source comprising a semiconductor diode amplifier chip (1) and a length of rare-earth-doped single mode optical fibre (2), the optical path within the chip (1) forming part of a ring and another part of the ring being comprised by said fibre (2), which fibre (2) provides an external cavity having distributed gain for the chip (1). A hybrid laser source as claimed in claim 1 further comprising means (7) for optically pumping the rare-earth-doped fibre (2). An hybrid laser source as claimed in claim 2, wherein the ring includes two lengths of single mode optical fibre (3, 4) between which the chip (1) is disposed, and optical couplers (5, 6) by means of which the ring is completed, the optical pumping means (7) can be coupled to one end of the rare-earth-doped optical fibre (2) and the laser source output can be taken from the other end of the rare-earth-doped optical fibre (2). An hybrid laser source as claimed in any one of the preceding claims wherein the rare-earth is erbium. An hybrid laser source as claimed in any one of the preceding claims wherein the chip (1) is an InGaAsP amplifier chip. An hybrid laser source as claimed in claim 2 or claim 3 wherein the optical pumping means (7) is comprised by a strained-layer semiconductor diode laser.

Inventors: BAKER, ROBERT ANTHONY, BURNS, DAVID, SIBBETT, WILSON, PROF.
Applicants: NORTHERN TELECOM LIMITED
Application year: 1990
Main classification: H01S3
IPC codes: H01S5, G02F1, H01S3