Process for thermal treatment of glass fiber preform

Abstract: The present invention provides a process: for the fluorine-doping treatment by heating a porous glass preform for an optical fiber comprising passing a porous glass preform through a muffle tube having a SiC layer at least on its inner surface at a high temperature under an atmosphere comprising a fluorine compound gas and an inert gas; and a process for the vitrifying treatment by heating a porous glass preform for an optical fiber comprising passing the preform, which has been previously dehydrated and purified, through a muffle tube having a SiC layer at least on its inner surface at a high temperature under an atmosphere gas.

Description: The present invention relates to a process for the thermal treatment of a porous glass preform for the production of an optical fiber preform. In particular, it relates to a process for vitrifying such a preform. A preform for an optical fiber is generally produced by forming a cylindrical or an annular porous preform by the Vapor Phase Axial Deposition method or the Outside Chemical Vapor Deposition method and heating, dehydrating and sintering the porous preform in a heating furnace under an atmosphere of an inert gas such as argon or helium, a chlorine based gas or a fluorine based gas to produce a transparent and highly pure preform for the optical fiber. The operating temperature of the furnace depends on the kind of dopant to be doped and on the amount of dopant to be added to the preform. A temperature in the range of 1200 to 1600°C is generally used. Since impurities tend to contaminate the preform at such high temperatures, a muffle tube made of a high purity quartz is typically used in the furnace to prevent contamination. However, the quartz made muffle tube tends to rapidly get brittle due to devitrification, that is, transition from a glass phase to a crystal phase at a high temperature, and thus it has poor durability. Recently, a carbon made muffle tube whose inner surface is coated with silicon carbide (SiC) has been used in a heating furnace. The carbon made muffle tube can be operated at a higher temperature than the quartz made one and SiC improves the gas impermeability and oxidation resistance of the muffle tube. Further, in order to prevent a reaction between SiC and a reactive gas, the SiC coating on the carbon made muffle tube is treated with oxygen to form a SiO 2 layer on the SiC coating (see Japanese Patent Kokai Publication No. 201634/1986). The prior art described above has the following problems: (1) When the quartz made muffle tube is used, it is softened and deformed at a temperature above 1400 °C. In addition, the temperature of the muffle tube cannot be lowered to a temperature below a crystal transition point (lower than 300 °C) because of crystal (cristobalite) formation at a temperature above 1200 °C. Thus, once the muffle tube is heated, it should be used continuously without lowering the temperature thereof. (2) When a SiC made or SiC coated muffle tube is used, SiC reacts with a halogen based gas as a reactant to form a porous carbon, whereby the muffle tube becomes poor in gas tightness so that the halogen based gas leads outside from the muffle tube. (3) If a muffle tube having an SiO 2 layer on the SiC coating is used, thermal expansion coefficients of SiC and SiO 2 differ greatly from each other and thereby the SiO 2 layer having a thickness of the order of some microns tends to crack. Gas can then permeate through the crack so that it becomes impossible to stably produce the preform for a long period. It is an object of the present invention to provide a process for vitrifying porous glass preforms over a long period with a stable production, from which preforms optical fibers having a low transmission loss can be drawn. The present invention provides a process for vitrifying a porous glass preform for an optical fiber comprising passing the preform through a muffle tube having an SiC layer on its inner surface at a temperature of above 1400°C under an atmosphere comprising an inert gas, SiF 4 , and at least one of Si 2 F 6 and Si 3 F 8 . It is preferred that the inert gas is at least one of He, Ar and N 2 . It is also preferred that the volume ratio of Si 2 F 6 to SiF 4 is 1 : 10, and the volume ratio of Si 3 F 8 to SiF 4 is 1 : 30. In the drawings : Figs. 1 to 3 and 6 each schematically shows a sectional view of an heating furnace in which the present invention is carried out, Fig. 4 schematically shows an apparatus for measuring an oxygen concentration in a muffle tube, and Fig. 5 shows results of oxygen measurements in one muffle tube with the measuring apparatus of Fig. 4. The present invention will now be described in detail with reference to the accompanying drawings. According to the invention vitrifying and optionally fluorine-doping can be performed using an SiC coated muffle tube without the degradation of the SiC layer. Basic experiments and considerations to create the process of the present invention will now be described in detail. Experiment 1 A sintered SiC article having a diameter of 5 mm was heated at a temperature of 1450°C under an atmosphere of SiF 4 gas. After heating for 10 hours, the weight loss of the SiC article was 2.4%. When other fluorine compound gases were used instead of SiF 4 , the weight loss was almost the same as in the case of using SiF 4 . Experiment 2 A sintered SiC article having the same size as in Experiment 1 was heated at a temperature of 1400°C under an atmosphere of SiF 4 gas. After heating for 50 hours, no weight loss of the SiC article was measured. When other fluorine compound gases were used instead of SiF 4 , the same results as with SiF 4 were obtained. Experiment 3 A sintered SiC article having the same size as that used in Experiment 1 was heated at a temperature of 1500°C under an atmosphere of 91% by volume of SiF 4 and 9% by volume of Si 2 F 6 for 50 hours, and no weight loss was determined. Experiment 4 Experiment 3 was repeated except that the heating temperature was 1650 °C. The article was heated for 10 hours and the weight loss thereof was 3%. Experiment 5 Experiment 4 was repeated except that a gas containing 85 % by volume of SiF 4 , 10 % by volume of Si 2 F 6 and 5 % by volume of Si 3 F 8 was used. After heating for 10 hours, no weight loss was determined. In addition, it has been found that Si adheres to the low temperature portion of the muffle tube when the weight loss of the SiC article was observed. From the results of the above Experiments 1 to 5, the following can be understood. (1) SiC reacts with the fluorine compound gas at a temperature above 1400 °C. However, by adding Si 2 F 6 as a reactant gas to SiF 4 , the reaction is suppressed. (2) The gas mixture of SiF 4 and Si 2 F 6 reacts with SiC at a further high temperature, but it does not react when Si 3 F 8 is added to the gas mixture. (3) The produced material through the reaction between SiC and Si y F x is Si in the low temperature portion. As a result, the reaction of SiC and the fluorine compound gas is suppressed at a temperature below 1400 °C. Even at a temperature higher than 1400 °C, the reaction of SiC with SiF 4 is suppressed by addition of Si 2 F 6 and/or Si 3 F 8 . Thus, guidelines on preventing the degradation of SiC are indicated. The above results can be explained as follows. The degradation reaction of SiC is expressed according to the following reaction equations: SiC + 3SiF 4 → 4SiF 3 ·↑ + C SiC + SiF 4 → 2SiF 2 ·↑ + C Free energy changes ΔG in reactions of the above equations (2) and (3) are positive up to 1800 °C and reactions hardly proceed to the right hand side of the equations. However, in a gas flowing system as in a muffle tube of an electrical heating furnace, each equilibrium is shifted and the reaction proceeds to the left hand side a little. Therefore, the SiC coating is degraded a little. When the gas such as the reaction products SiF 3 · and/or SiF 2 · are added to the reaction system, the reaction equilibrium is kept and the degradation of the SiC coating is suppressed. Si 2 F 6 or Si 3 F 8 forms SiF 3 · or SiF 2 · at a high temperature according to the following equations: Si 2 F 6 → 2SiF 3 · Si 3 F 8 → 2SiF 3 · + SiF 2 · The products SiF 3 · and SiF 2 · suppress the reactions (2) and (3). The muffle tube preferably used in the present process has an inner layer made of a highly pure silicon carbide or has an inner and an outer layers each made of the highly pure silicon carbide. The highly pure silicon carbide used for the muffle tube has preferably a purity of not less than 99.999 % and preferably contains iron of not more than some ppm and copper of not more than 1 ppm. The muffle tube in the heating furnace used in the present invention has the highly pure silicon carbide layer as its inner layer or as its inner and outer layers. The silicon carbide layer is preferably formed by a coating method with vapor phase reaction (CVD method) such as plasma CVD (PCVD) coating method or chemical CVD coating method since a highly pure and dense coating can be formed by such method. A thickness of the highly pure silicon carbide coating can be selected depending on the operation temperature of the muffle tube and the atmosphere in the muffle tube. Generally, the coating has a thickness of at least 1 µm, preferably at least 5 µm, more preferably at least 25 µm, for example 50 µm. Carbon, alumina or SiC sintered material can be exemplified as a material for the muffle tube substrate. The carbon material, especially a highly pure carbon material is preferred. In the case where the highly pure carbon is used for the muffle tube substrate, the impurity of the carbon expressed as a total ash content is not more than 50 ppm, preferably not more than 20 ppm. For example, when the carbon has the ash content of more than 1000 ppm, it cannot be used for making the muffle tube substrate in view of the impurities such as iron and copper. The impurities and their amounts contained in the carbon having the total ash content of not more than 20 ppm are shown in the following Table: B < 0.1 ppm Ca < 0.1 ppm Mg < 0.1 ppm Ti < 0.1 ppm Al < 0.1 ppm V < 0.1 ppm Si < 0.8 ppm Cr < 0.1 ppm P < 0.2 ppm Fe < 0.1 ppm S < 0.1 ppm Cu < 0.1 ppm Ni < 0.1 ppm Fig. 1 schematically shows a sectional view of a heating furnace with which the present process is performed. In Fig. 1, the reference number 21 indicates a porous glass preform, 22 indicates a supporting rod for the preform, 23 indicates a muffle tube, 24 indicates a heater, 25 indicates a furnace body, 26 indicates an inlet for introducing an inert gas inside the furnace body and 27 indicates an inlet for introducing an atmosphere gas (for example, SF 6 , helium and so on) into the muffle tube. The reference number 231 indicates a muffle tube substrate made of carbon, 232 does a coating layer of the highly pure silicon carbide. In the embodiment as shown in Fig. 1, the coatings of the highly pure silicon carbide are present as an inside layer and an outside layer of the muffle tube 23. Fig. 2 schematically shows a sectional view of a heating furnace for the optical fiber preform which is also used in accordance with the present invention. In the embodiment shown in Fig. 2, is used a member 31 which is made of a heat resistant material having a small gas permeability such as a ceramic or a metal material and in which a muffle tube 23 is inserted in order to prevent penetration of a contaminant into the muffle tube through a wall thereof. At least an inner surface of the muffle tube 23 is coated with the highly pure carbon (not shown). A material used for the member 31 is preferably the ceramic or the metal material having a nitrogen permeability in the order of 10 -6 cm 2 /sec. or less. Examples of the ceramic material are, in addition to silicon carbide, quartz glass, Al 2 O 3 , BN and so on. In another embodiment of an heating furnace which is used in the present invention, a muffle tube comprises an upper portion, a middle portion and a lower portion which are detachably connected each other. At least the middle portion is made of the highly pure carbon, and the upper and the lower portion are made of a heat and corrosion resistant material. One example of the above embodiment is schematically shown in Fig. 3. A heater 24 is located inside a heating furnace body 25. A muffle tube 23 comprises an upper portion 434, a middle portion 435 and a lower portion 436 and they are detachably connected each other by, for example, screwing. At least an inner surface of the middle portion 435 is coated with a layer 432 made of the highly pure silicon carbide. Since the upper portion 434 and the lower portion 436 are not subjected to so high temperature as in the middle portion 435, they are not necessarily made of such highly pure material as in the middle portion 435, but they only need to have the gas impermeabilities. Thus, although the upper and the lower portions are shown to have the layers 432 made of the highly pure silicon carbide as shown in Fig. 3, the layers are preferably made of a usual silicon carbide material from a view point of economy which does not have such high purity as the silicon carbide material as described above. For example, a silicon carbide material having a purity of 99.9 % is satisfactory. In addition, since the upper and lower portions are heated at a temperature not higher than 1000 °C, they may be made of a quartz material which is not resistant to a fluorine based gas. Even in such case, the contents of copper and iron, especially copper content should be taken into account and they are preferably not more than 0.1 ppm. The muffle tube having the middle portion at least the inner surface of which is coated with the highly pure silicon carbide is suitably used in the present invention since it does not react with the halogen based gas such as SiF 4 , Si 2 F 6 , CF 4 and C 2 F 6 , and it is highly heat resistant. In the case where the heating furnace as shown in Fig. 1, 2 or 3 is used, a large amount of air around the muffle tube (or environmental operation atmosphere) penetrates into the muffle tube, when the glass preform is inserted in or removed from the muffle tube. Fig. 4 schematically shows an apparatus which measures an amount of air inflow into a muffle tube comprising the muffle tube 51, an inlet 52 for introducing a purging gas, a sampling tube 53 for a gas in the muffle tube, a device 54 which measures an oxygen concentration in the gas and a pump 55. An inner diameter of the muffle tube 51 is 150 mm and a tip portion of the sampling tube is located at a position by 1 m from an opening of the muffle tube. Results of the oxygen concentration measurement carried out with respect to one embodiment with the above measuring device are shown in a graph in Fig. 5. As understood from the graph, the air around the muffle tube penetrates into the muffle tube and it is impossible to prevent the inflow of the air even when an amount of the purging nitrogen is increased. The inflow of the air causes problems as follows: Firstly, inside of the muffle tube is contaminated with dusts in the air. The dusts comprises SiO 2 , Al 2 O 3 , Na 2 O, Fe 2 O 3 and so on. Among them, Al 2 O 3 and Na 2 O cause devitrification of the preform, and Fe 2 O 3 causes increase of a transmission loss. Such inflow of the air is prevented in an additional embodiment of the heating furnace in which the present invention is performed. The heating furnace comprises a heater, a muffle tube and a front chamber which previously or subsequently accommodates the glass preform before or after a thermal treatment of the preform, and from or in which the preform is inserted in or removed from the muffle tube. Fig. 6 schematically shows a heating furnace which is the same as that shown in Fig. 3 except that it comprises the front chamber 71. When the furnace is used, the glass preform 21 to be thermally treated is inserted in the front chamber 71 and a top cover (not shown) of the front chamber is closed. Then, nitrogen is supplied in the front chamber which is separated from the muffle tube 23 with a partition means 76 for nitrogen replacement. The partition means 76 is opened, the porous glass preform is inserted in the muffle tube 23 of which inside atmosphere has been previously replaced with a desired atmosphere gas, the partition means is closed and then the thermal treatment is initiated. After the thermal treatment, the partition means is opened, the partition means is closed after the glass preform is lifted from the muffle tube into the front chamber, and then the glass preform is removed from the front chamber after opening the top cover. The front chamber is preferably constructed so that it can be evacuated to a pressure of 10 -2 Torr and be heated to a temperature of 800 °C. The front chamber is preferably made of a material which is heat resistant and which does not liberate any contaminant. For example, quartz glass, SiC, Si 3 N 4 or BN is preferred for making the front chamber. The material of the chamber may the same as or different from that of the muffle tube. When the front chamber is evacuated, for example a rotary pump may be used. In order to prevent a back flow of a pump oil, a trap cooled with liquid nitrogen may be located between the front chamber and the pump. A rotary installing mechanism having a magnetic seal is disposed at the top of the front chamber. The present invention will now be further described by way of the following examples. Example 1 Twenty glass preforms for an optical fiber were treated by using a heating furnace as shown in Fig. 1. The furnace comprised a carbon made muffle tube having the SiC coating in a thickness of 60 µm. The atmosphere of the treatment was SiF 4 /Si 2 F 6 /He = 3 %/0.3 %/96.7 % and the heating temperature was 1650 °C. The obtained preform had a specific refractive index difference of -0.3 % relative to quartz. After the treatment of the preforms, no degradation of the SiC coating was observed on the surface of the muffle tube. Example 2 By using an apparatus as in Example 1, twenty porous fluorine-doped glass preforms was vitrified under an atmosphere of SiF 4 /Si 2 F 6 /Si 3 F 8 /He = 3 %/0.3 %/0.1 %/96.6 % at a temperature of 1650 °C. After the vitrifying treatment, the surface of the muffle tube was observed and no corrosion of the SiC coating was found. A single mode optical fiber was produced from the obtained preform. The transmission losses of the optical fiber were 0.35 dB/km and 0.20 dB/km at wavelengths of 1.3 µm and 1.5 µm, respectively. Example 3 By using an apparatus as in Example 1, fifteen fluorine-doped glass preforms were vitrified under an atmosphere of SiF 4 /Si 3 F 8 /He = 3 %/0.1 %/96.9 % at a temperature or 1650 °C. After the vitrifying treatment, the surface of the muffle tube was observed and no corrosion of the SiC coating was found. A single mode optical fiber was produced from the obtained preform. The transmission losses of the optical fiber were 0.33 dB/km and 0.20 dB/km at wavelengths of 1.3 µm and 1.5 µm respectively. Comparative Example 1 When a carbon made muffle tube having a SiC coating in a thickness of 60 µm in a heating apparatus as shown in Fig. 1 was kept at a temperature of 1550 °C under an atmosphere of He containing 5 % of SiF 4 for ten hours, the SiC coating was fully volatilized.

Claims: A process for vitrifying a porous glass preform (21) for an optical fiber comprising passing the preform through a muffle tube (23) having an SiC layer (232) on its inner surface at a temperature of above 1400°C under an atmosphere comprising an inert gas, SiF 4 , and at least one of Si 2 F 6 and Si 3 F 8 . A process according to claim 1, wherein the inert gas is at least one of He, Ar and N 2 . A process according to claim 1 or claim 2, wherein the volume ratio of Si 2 F 6 to SiF 4 is 1 : 10. A process according to claim 1 or claim 2, wherein the volume ratio of Si 3 F 8 to SiF 4 is 1 : 30.

Inventors: ISHIKAWA SHINJI, KANAMORI HIROO, KYOTO MICHIHISA, OHGA YUICHI, TSUCHIYA ICHIRO, YOKOTA HIROSHI, ISHIKAWA, SHINJI, KANAMORI, HIROO, KYOTO, MICHIHISA, OHGA, YUICHI, TSUCHIYA, ICHIRO, YOKOTA, HIROSHI, ISHIKAWA, SHINJI, C/O YOKOHAMA WORKS OF SUMITOMO, KANAMORI, HIROO, C/O YOKOHAMA WORKS OF SUMITOMO, Kyoto, Michihisa, c/o Yokohama Works of Sumitomo, OHGA, YUICHI, C/O YOKOHAMA WORKS OF SUMITOMO, TSUCHIYA, ICHIRO, C/O YOKOHAMA WORKS OF SUMITOMO, YOKOTA, HIROSHI, C/O YOKOHAMA WORKS OF SUMITOMO
Applicants: SUMITOMO ELECTRIC INDUSTRIES, SUMITOMO ELECTRIC INDUSTRIES, LTD
Application year: 1990
Main classification: C03B37
IPC codes: C03B37, G02B6