Improved sense circuit for storage devices such as non-volatile memories, with compensated offset current

Abstract: The sense circuit comprises a sense amplifier (SA) having a first input (X) connected to a number of selectable virgin reference cells (T vr ), and a second input (Y) connected to a number of selectable matrix cells (T vm , T pm ) and to first circuit means (NV₀, T₁, T₂, T₃, CM₁) adapted to draw a current of a value one half the current that flows in a virgin cell when selected. According to the invention, the sense circuit further comprises second circuit means (NP₀ T₄, T₅, T₆, CM₂) connected to said first input and adapted to draw a current of a value one half the current that flows in a programmed cell when selected.

Description: This invention is concerned with a memory having an improved sense circuit, of the variable offset current type, for recognizing the virgin or programmed status of the cells in storage devices such as CMOS non-volatile memories. In circuits made with CMOS technology, where programmable components are used to make non-volatile memories (ROM, EPROM, EEPROM, FLASH), it is necessary to provide a reference system which is able to recognize programmed elements, which are turned off and which therefore draw a zero current when driven, from the non-programmed, or virgin, elements, which are on, and therefore draw a current when driven. Recognition is achieved by comparing, in a differential sense amplifier, the current in the element or cell which it is desired to read with the current in a reference cell, which may itself be virgin or programmed. However, the sense amplifier must be able to provide an output also when reading a virgin matrix cell, in which case both its inputs would be equal. Therefore, it is known to shift the discriminating threshold by a method known as "variable offset current", according to which an offset current of half the current in virgin cell is permanently applied to the reading input of the amplifier. While the above approach gives satisfactory results in a limited range of supply voltages, it is liable to fail at high supply voltages, because (as will be shown in more detail below) then the current in the programmed cell increasingly departs from zero, until it exceeds the value of the threshold current (i.e. half the current in a virgin cell). The above situation effectively limits the range of acceptable supply voltages, or, from another point of view, compels the manufacturer to discard devices which would otherwise operate satisfactorily at middle voltages, because they fail at the high end of of the voltage range. EP-A-270 750, discloses a semiconductor memory comprising unbalanced loads and offset current sources for drawing the same amount of current from the reference and matrix cells. Yet another semiconductor memory circuit including a sense circuit for reading EPROM and ROM type memory cells is known from EP-A-443 989 which is prior art under Article 54(3) EPC. The circuit of EP-A-443 989 further includes offset current sources for the virgin and programmed cells drawing a current which is approximately half of the current through a virgin cell and a current lower than the current through a programmed cell when selected. The main object of the invention is therefore to provide a semiconductor memory with an improved sense circuit, of the variable offset current type, for recognizing the virgin or programmed status of the cells in storage devices which improved sense circuit compensates the above drift of the current in the programmed cell, extends the operating range of the sense circuit, particularly in that it allows operation in a wider range of voltage supplies, and is capable of distinguishing the stored data in a memory cell. Another object is to increase the manufacturing yield of such sense devices. The invention achieves the above and other objects and advantages, such as will appear from the following disclosure, with a semiconductor memory as defined in claim 1. The invention will now be described in more detail with reference to a preferred embodiment, given by way of illustrative and nonlimiting example, and with the aid of the attached drawings, wherein: Fig. 1 is a diagram of memory circuit with a variable offset current sense circuit according to the prior art; Fig. 2 is a diagram of a modified memory circuit with an offset current sense circuit according to the invention; and Fig. 3 is a current-voltage plot showing several current quantities plotted against an increasing supply voltage for the circuits of Figs. 1 and 2. In Fig. 1, a differential sense amplifier SA has a first input X and a second input Y. T vm and T pm are a virgin cell and a programmed cell, respectively, which are part of a matrix of cells or transistors (not shown fully) of a storage device such as a ROM, made with CMOS technology. Each of the cells T vm and T pm has a grounded source, a drain connected to a column line CL tied to a diode-connected, P-channel load transistor T CL supplied by voltage V cc and to input Y of the sense amplifier, and a gate connected to a row line RV or RP, respectively. Each of the load transistors T CL can be turned on, and each of the row lines can selectively be driven high, by means not shown, as well known in the art, to select the cell at the crosspoint of the selected column and row. If the selected cell is virgin, such as T vm , a current I vm is caused to flow through it, while, if the selected cell is programmed, such as T pm , an ideally null current I pm will be caused to flow through it. T vr1 and T vr2 are two virgin reference cells, corresponding to cells T vm and T pm , respectively, and each of the reference cells has a grounded source, a drain connected to a reference line RL tied to a diode-connected, P-channel transistor T RL supplied by voltage V cc and and to input X of the sense amplifier, and a gate tied to the row line RV or RP of the corresponding row of matrix cells. Load transistor T RL can be turned on by means not shown, to drive reference line RL high, simultaneously with column line CL. As known in the art, there is a virgin reference cell for each row of matrix cells in the device. Load transistors T CL and T RL are equal, and in order to allow the sense amplifier to sense a differential input even when reading a virgin matrix cell, as known in the art, an enhancement transistor T₃ has a grounded source, a drain connected to input Y of the sense amplifier, and a gate driven by appropriate circuit means. The latter circuit means comprises a virgin cell NV₀ having a grounded source, a gate connected to a supply voltage V cc , and a drain connected to one of two terminals of a current mirror CM₁, and two enhancement transistors T₁ and T₂ connected in parallel, and having their sources grounded and their drains connected to the other terminal of current mirror CM₁. Transistors T₁ and T₂ are identical to each other and to T₃, and their drains are also connected to the gate of transistor T₃, thus causing, as known in the art, a current to flow in T₃ of a value one half the current I v . The total current through load T CL will then substantially be either one half or one and a half the current I v , (I v /2 or 3I v /2), depending on the status on the matrix cell being read, and the difference with the current in the reference line will ideally have in both cases the same amplitude I v /2, but a positive or negative sign depending on the matrix cell being virgin or programmed. More specifically, when the virgin matrix cell T vm , is selected, sense amplifier SA will compare a current I vr flowing in the reference line with a current I vm + I vr /2 flowing in the column line (the loads T CL and T RL being identical), and the comparison will be governed by the following inequality: I vm + I vr /2 > I vr When the programmed matrix cell T pm is selected, the following inequality will hold: I pm + I vr /2 < I vr As a rule, the virgin matrix cell and the virgin reference cell are the same, i.e. I vm = I vr = I v . And, ideally, the current in a programmed cell is zero, i.e. I pm = 0. Then the inequalities (1) and (2) become, respectively: (3/2)I v > I v I v /2 < I v Inequalities (3) and (4) are inherently true. However, in actual devices, and for extreme ranges in the process paramaters, supply voltage, temperature, etc., it may well happen that the current I pm in the programmed matrix cell is different from 0, and the above inequality (4) becomes: I p < I v /2, This is a limitation to the range of variation in a number of process and/or operating parameters. With reference to Fig. 3, the lines show how the values of several current quantities of interest change as the supply voltage V increases from 0 upwards. Line A shows the current I v in a virgin cell; line B shows the current I p in a programmed cell; line C shows the current I v + I v /2 at the input of the sense amplifier when a virgin cell is selected; and line D shows the current I p + I v /2 at the input of the sense amplifier when a programmed cell is selected (Line E will be described later). It can be seen that, while the differential input to the sense amplifier, i.e. C - A for a virgin cell and D - A for a programmed cell has the correct sign in the middle range of supply voltages, the differential input C - A will increase in amplitude with increasing voltage, due to the greater slope of line C with respect to line A,, while the differential input D - A will decrease to zero and eventually change sign, as line D approaches and eventually exceeds A for very high supply voltages. When this happens, the recognition process of course fails, and a programmed cell is misread as virgin. With reference to Fig. 2, a memory circuit according to an embodiment of the invention will now be described. The sense circuit is similar to the circuit of Fig. 1, and includes all the parts shown there, which are referenced with the same reference characters also in Fig. 2. However, the circuit of Fig. 2 also comprises a compensatory enhancement transistor T₄ having a grounded source and a drain connected to input X of the sense amplifier, while its gate is driven by circuit means comprising a programmed cell NP₀ having a grounded source, a gate connected to a supply voltage V cc , and a drain connected to one of two terminals of a current mirror CM₂, and two enhancement transistors T₅ and T₆ connected in parallel, and having their sources grounded and their drains connected to the opposite terminal of current mirror CM₂. Transistors T₅ and T₆ are identical to each other and to T₄, and their drains are connected to the gate of transistor T₄, thus causing, as known in the art, a current to flow in transistor T₄ of a value one half the current I p . With the sense circuit of Fig. 2, the sense amplifier will compare a current I v + I p /2 either with a current I v + I v /2, if a virgin matrix cell was selected, or with a current I p + I v /2, if a programmed matrix cell is selected. In other words, the set of inequalities (1) and (2) is now replaced by the following inequalities: I vm + I vr /2 > I vr + I p /2 I pm + I vr /2 < I vr + I p /2 where, again, the virgin matrix cell and the virgin reference cell are the same, i.e. I vm = I vr = I v . Also, I pm = I p . Then, even if I p > 0, the above inequalities become: I v /2 > I p /2 I p /2 < I v /2 Since the current in a virgin cell, even at very high supply voltages, must always be greater than the current in a programmed cell, inequalities (8) and (9) must always be true. Therefore the sense circuit of Fig. 2 provides for correct recognition of the status of matrix cells even at extreme ranges of the parameters, or for highly deteriorated conditions of the cells. The new situation is reflected in line E of Fig. 3, which represents how the quantity I v + I p /2, and therefore the signal at input X of the sense amplifier, changes with increasing supply voltage V cc . It can be appreciated that line E remains vertically equidistant from lines C and D over a greater range of the supply voltage. A preferred embodiment of the invention has been disclosed above, but it is understood that changes may be made to it by a man skilled in the art within the scope of the invention. In particular, while the circuit driving the gate of the compensatory programmed cell has been described as providing a current half the current in a programmed cell, a lower or greater value would already be sufficient to achieve the objects of the invention. Moreover, although the word "programmed" used above suggests that programming has been achieved by application of electrical biases, it should be understood also to cover a programming achieved by means of masks during the manufacturing process, e.g. in the production of ROMs.

Claims: A semiconductor memory comprising: a plurality of selectable matrix cells (T vm , T pm ) for storing data; a plurality of selectable virgin reference cells (T vr1 , T vr2 ); a sense amplifier (SA) for recognizing the virgin or programmed status of said matrix cells (T vm , T pm ) in said memory, said sense amplifier (SA) having a first input (X) connected to a number of said selectable virgin reference cells (T vr1 , T vr2 ) and a second input (Y) connected to a number of said selectable matrix cells (T vm , T pm ); a first circuit means (NV o , T₁, T₂, T₃, CM₁) connected to said second input (Y) and adapted to draw a current of a value one half the current that flows in a said virgin cell when selected; a second circuit means (NP o , T₄, T₅ T₆, CM₂) connected to said first input (X) and adapted to draw a current of a value approximately one half the current that flows in a said programmed cell when selected; and balanced loads (T CL , T RL ) each connected between a respective said input (X, Y) of said sense amplifier and a voltage supply line (V cc ), said second circuit means (NP o , T₄, T₅ T₆, CM₂) comprising a first enhancement transistor (T₄) having a grounded source, a drain connected to the first input (X) of the sense amplifier (SA), and a gate driven by control means (NP o , T₅, T₆, CM₂), said control means comprising a programmed cell (NP o ), said control means being adapted to cause a current to flow in said enhancement transistor (T₄) of a value approximately one half the current that flows in a said programmed cell when selected. The semiconductor memory of claim 1, CHARACTERIZED IN THAT the control means (NP o , T₅, T₆, CM₂) comprises a current generator (NP o , CM₁) adapted to generate a current substantially equal to the current in a said programmed cell when selected, and connected across a second and a third permanently turned-on enhancement transistor (T₅, T₆) connected in parallel, and driving the gate of said first enhancement transistor (T₄), said first, second and third enhancement transistors (T₄, T₅, T₆) having subsantially identical characteristics. The semiconductor memory of claim 2, CHARACTERIZED IN THAT said current generator (NP o , CM₁) comprises: a current mirror (CM₂) having an output terminal and an input terminal; and said programmed cell (NP o ) connected to the input terminal of the current mirror (CM₂).

Inventors: OLIVO MARCO, PASCUCCI LUIGI, OLIVO, MARCO, PASCUCCI, LUIGI
Applicants: SGS THOMSON MICROELECTRONICS, SGS-THOMSON MICROELECTRONICS S.R.L.
Application year: 1990
Main classification: G11C16
IPC codes: G11C7, G11C17, G11C16