Coupled quantum-well electro-optical modulator

Abstract: A coupled quantum-well electro-optical modulator, whose semiconductor structure is composed of one or of a plurality of successions formed by two layers apt to form quantum wells, of a barrier layer which separates said two layers and of an intrinsic layer which separates the succession from other possible successions, where in presence of an electric field the absorption threshold of the light radiation shifts towards shorter wavelengths.

Description: The present invention concerns the telecommunications using light radiations as information carriers and more particularly it refers to a coupled quantum well electro-optical modulator. As known, electro-optical modulators are of main importance in optical telecommunications systems. They, on the basis of an electrical command, absorb or transmit optical pulses sent from a suitable source, namely a laser, towards their surface. At their output duly coded digital signals can be obtained to be transmitted by optical fibres. Nowadays optical modulators exist which exploit different physical effects: magneto-optical, acousto-optical and electro-optical effects. The latter effect, more particularly, is used in the so-called "quantum-well" modulators. These devices consist of a succession of layers of semiconductor material, a thin layer of which (having a thickness lower than 25nm) forms the quantum well and the two layers by which it is sandwiched, made of chemically-different semiconductor materials, form the barrier layers. This arrangement can act as an electro-optical modulator whenever it is immersed in an electric field perpendicular to the thin layer. To this aim the said three layers are comprised between semiconductor layers which in turn contact metal layers, whereto a suitable potential difference can be applied. Said layers allow the creation of an electric field, but do not influence the physical phenomenon of absorption or transmission of light radiation, dominated by the thin layer and by the confining barrier layers. The phenomenon, known as Stark effect, consists in an energy level shift induced by an electrical field in the thin layer material. In fact, inside the quantum well there is a set of discrete and quantized levels in valence band as well as a set of levels in conduction band. Electron transitions from valence band to conduction band take place by photon absorption with energy corresponding to level energy difference. When an electric field is applied, both in valence band and in conduction band an energy level shift and consequently a shift in light absorption threshold of the device occur. More particularly, in the known devices the absorption threshold shifts towards lower energy levels, corresponding to longer wavelengths (red shift). Larger shifts can be obtained by using highly-coupled multiple quantum-well structures. Structures consisting of two quantum wells separated by a very thin barrier layer, about 1nm thick, are well known (see "Electroabsorption in GaAs/AlGaAs coupled quantum well waveguides", N.M. Islam et alii, Applied Physic Lett. 50 (16), 20 April 1987). Absorption threshold shifts towards lower energies are thus obtained which are about ten times greater that those obtainable with a single quantum well. Also the applied electrical field can be lower: about 8·10⁴ V/cm instead of 1·10⁵, which is very near the breakdown voltage of the structure. However, electro-optical modulators whose absorption threshold can be shifted towards higher energy levels, corresponding to shorter wavelengths (blue shift) are not yet known. The coupled quantum-well electro-optical modulator, provided by the present invention, allows a shift of the light absorption threshold towards greater-energy levels, with application of an electric field of the order of 10⁴ V/cm. Said properties offer greater flexibility in optical telecommunications system design, since they allow the designer to use the type of device more suited to the optical radiation source available. The present invention provides a coupled-quantum well electro-optical modulator which presents a light radiation absorption threshold, consisting of a structure composed of a plurality of semiconductor layers, comprising: a metal layer allowing the structure to be connected to a lead for the application of a control electrical potential, a p-type layer, an intrinsic layer, one or more successions comprising: a GaAs layer which forms the first quantum well, an intrinsic AlGaAs barrier layer, a second GaAs layer which forms the second quantum well, an intrinsic layer, an n-type layer, an n-type layer covering the substrate, said substrate, a metal layer allowing the structure to be conntected to a second lead for the application of the control electrical potential, wherein said metal layers the substrate covering layer and the substrate itself have holes to allow the passage of a light radiation sent perpendicular to the structure layers, said barrier layer has a 3,3 nm ± 10 % thickness, and a reverse bias voltage, apt to generate an electrical field of the order of 10⁴ V/cm, is applied for shifting the light radiation absorption threshold towards shorter wavelengths. The invention concerns also such a structure wherein the barrier layer is formed of InAlAs and the quantum wells are formed of InGaAs. The foregoing and other characteristics of the present invention will be made clearer by the following description of a preferred embodiment thereof given by way of non-limiting example, and by the annexed drawing which is a cross sectional view of the modulator structure. Modulator performances, and more particularly the shift of absorption threshold of light radiation towards shorter wavelengths, are obtained by starting from a structure with a conventional layer succession, but using thicknesses both of the thin layers forming quantum wells and of the barrier layer suitably determined to allow blue shift phenomenon occurrence. The drawing shows the section of the coupled quantum-well modulator, with a structure particularly adapted to operate on a light radiation sent perpendicular to the layers. The thickness of the individual layers is not shown in scale. Reference 1 denotes a metal layer apt to permit structure connection to a lead for the application of a control electrical potential. 2 denotes a p-type AlGaAs layer, about 1 µm thick, acting as a contact layer. 3 denotes an intrinsic layer with a chemical composition equal to that of layer 2 and with a thickness of about 1 µm. 4 denotes the layer forming the first quantum well, which is made of GaAs and is 3,3nm ± 10% thick. 5 denotes the barrier layer, made of intrinsic AlGaAs and 3,3nm ± 10% thick. 6 denotes the layer forming the second quantum well, which is made of GaAs and is 3,3nm ± 10% thick. 7 denotes an intrinsic layer, made of AlGaAs and about 1 µm thick. This layer, as well as layer 3, is to avoid electrical field deformations due to interface electrical fields induced by structure imperfections. 8 denotes an AlGaAs layer, of n-type and about 1 µm thick. 9 denotes a GaAs layer, of n-type and about 3 µm thick, covering the commercial substrate, which is generally imperfect. 10 denotes the GaAs substrate. Finally 11 denotes a metal layer apt to allow the structure to be connected to a second lead for application of the control electrical potential. To allow light radiation passage through layers 9 and 10 (which are opaque at the operative wavelength) a hole is obtained by selective chemical etching. Layer 8 blocks the etching. Of course, also metal layers 1 and 11 have holes in correspondance with the holes in layers 9 and 10. It is worth noting that layers 3 and 7 can be replaced by alternate GaAs and AlGaAs layer successions, each being 1nm thick, and with a total thickness of about 0.5 µm. Such a solution is very expensive, but more efficient in removing undesired electrical field deformations. All AlGaAs layers present percent compositions equal to 30 in AlAs and 70 in GaAs. As is to be noted, the structure is of p-i-n type (doped layer p, intrinsic layer and doped layer n) and for its operation demands a reverse bias voltage, apt to generate an electric field of the order of 10⁴ V/cm. With previously mentioned quantum well and barrier layer thicknesses two effects are obtained upon creation of the electrical field. A first effect still consists in the shift of the first lowest energy transition towards lower energies (red shift), but this transition becomes extremely inefficient, i.e. it absorbs very little the light radiation traversing the structure. The second effect consists in the shift of the second transition of higher energy than the preceding one, towards higher energies (blue shift) and in a high efficiency increase. In other words this second transition absorbs very little light radiation when there is no electrical field applied, while it produces an absorption 30 and more times higher in presence of the electrical field. Receiving a light radiation with a wavelength corresponding to the first transition energy, the structure is higly absorbing with null electrical-field. Applying the electrical field, the first transition undergoes a red shift and becomes little absorbing, while the second transition undergoes a blue shift and becomes extremely absorbing, that is why the structure becomes quasi-perfectly transparent at the light-source wavelength. To obtain a cumulative effect it is possible to insert in the structure a plurality of quantum wells, of the type of layers 4, 5, 6, separated by layers of intrinsic AlGaAs (such as layer 7) of at least 10nm thickness. Thus there is a succession of coupled-well, 10nm of AlGaAs, coupled well, 10nm of AlGaAs,..., coupled well. The total thickness of such a succession can attain 0.5 µm, correspondent to about 30 coupled quantum-wells. The device can operate at a 10 Gbit/s modulation rate on a radiation with a wavelength of about 800 nm, whenever the materials used in the structure are those previously mentioned. Using different materials, it is possible to operate on radiations with different wavelength; e.g. by replacing AlGaAs with InAlAs, GaAs with InGaAs and GaAs substrate with InP substrate, the operative wavelength attains 1,55 µm. Since the effect of absorption threshold towards higher energies (blue shift) is determined exclusively by the thickness of layer 5 forming the barrier, the material change determines only a change in the wavelengths at which the electro-optic modulator can operate, without perturbing the optical blue shift effect. Finer adjustment of the operative wavelengths can be obtained by changing the thicknesses of layers 4 and 6, forming quantum wells. It is clear that what described has been given only by way of non-limiting example.

Claims: A coupled-quantum well electro-optical modulator which presents a light radiation absorption threshold, consisting of a structure composed of a plurality of semiconductor layers, comprising: a metal layer (1) allowing the structure to be connected to a lead for the application of a control electrical potential, a p-type layer (2), an intrinsic layer (3), one or more successions comprising: a GaAs layer (4) which forms the first quantum well, an intrinsic AlGaAs barrier layer (5), a second GaAs layer (6) which forms the second quantum well, an intrinsic layer (7), an n-type layer (8), an n-type layer (9) covering the substrate (10), said substrate (10), a metal layer (11) allowing the structure to be conntected to a second lead for the application of the control electrical potential, wherein said metal layers (1, 11), the substrate covering layer (9) and the substrate (10) itself are provided with an opening to allow the passage of a light radiation sent perpendicular to the structure layers, said barrier layer (5) has a 3,3 nm ± 10 % thickness, and a reverse bias voltage, generating an electrical field of the order of 10⁴ V/cm, is applied to shift the light radiation absorption threshold towards shorter wavelengths. A coupled-quantum well electro-optical modulator which presents a light radiation absorption threshold, consisting of a structure composed of a plurality of semiconductor layers, comprising: a metal layer (1) allowing the structure to be connected to a lead for the application of a control electrical potential, a p-type layer (2), an intrinsic layer (3), one or more successions comprising: a InGaAs layer (4) which forms the first quantum well, an intrinsic InAlAs barrier layer (5), a second InGaAs layer (6) which forms the second quantum well, an intrinsic layer (7), an n-type layer (8), an n-type layer (9) covering the substrate (10), said substrate (10), a metal layer (11) allowing the structure to be conntected to a second lead for the application of the control electrical potential, wherein said metal layers (1, 11), the substrate covering layer (9) and the substrate (10) itself have holes to allow the passage of a light radiation sent perpendicular to the structure layers, said barrier layer (5) has a 3,3 nm ± 10 % thickness, and a reverse bias voltage, apt to generate an electrical field of the order of 10⁴ V/cm, is applied for shifting the light radiation absorption threshold towards shorter wavelengths.

Inventors: CAMPI DOMENICO, CAMPI, DOMENICO
Applicants: CSELT CENTRO STUDI LAB TELECOM, CSELT CENTRO STUDI E LABORATORI TELECOMUNICAZIONI S.P.A.
Application year: 1990
Main classification: H01L31
IPC codes: H01L31, G02F1