Method of manufacturing a multi-layered wiring structure of semiconductor integrated circuit device

Abstract: An insulation film (15, 17, 19) is formed on a sem­ iconductor substrate (11) in which semiconductor ele­ ments are formed. A plurality of wiring layers (23-1 to 23-4, 26-1, 26-2, 29) and interlaid insulation films (24, 27) are alternately laminated on the insulation film (15, 17, 19). The design margins of the laminated wiring layers (23-1 to 23-4, 26-1, 26-2, 29) and via holes (25, 28) formed in the interlaid insulation films (24, 27) are set to be larger as they are set at a higher level. The design margin is determined by using the focus margin, mask misalignment due to the mask alignment accuracy, pattern size conversion error, warp of the semiconductor substrate and irregularity of the surface of the semiconductor substrate as parameters.

Description: This invention relates to a method of manufacturing a semiconductor device according to the preamble of claim 1. In recent years, it has been required to provide the multi-layered structure in large scale integrated circuits as the circuit construction thereof becomes more complicated to attain the high integration density and highly sophisticated functions. Conventionally, with the multi-layered wiring structure, the design margins of via holes formed in an interlaid insulation film between wiring layers and the pattern of the wiring layers are set to a preset value, for example, 0.60 µm. For this reason, abnormal etching may tend to easily occur in the process of patterning the upper layer formed at a higher level because of the presence of stepped portions caused by formation of the lower wiring layer, via holes or the like. For example, in the process of patterning the upper wiring layer, the lower wiring layer lying below the upper wiring layer may be sometimes etched. If such abnormal etching occurs, an increase in the wiring resistance, wiring breakage, electromigration or the like may occur so that the circuit function may be lowered and an operation error may occur, thereby lowering the manufacturing yield and degrading the reliability. Further, since no special attention is generally paid to the positions of stepped portions of the upper and lower wiring layers in the designing process for the multi-layered wiring structure, the stepped portions of the upper and lower wiring layers may overlap each other. If the stepped portions of the wiring layers overlap each other, the planarization effected by formation of the interlaid insulation film cannot be satisfactorily attained on the overlapped portion and a large stepped portion will be formed in the interlaid insulation film. It is confirmed that the stepped portion caused in the interlaid insulation film becomes larger with an increase in the number of the laminated wiring layers. As a result, the film thickness of a photoresist in the large stepped portion becomes larger and it becomes necessary to increase the amount of exposure with respect to that portion of the interlaid insulation film in which the large stepped portion has been formed when the photolithographic step is effected to form via holes or pattern the wiring layers. Generally, the apparent thickness of the to-be-etched material on the stepped portion is large and the apparent film thickness of the material increases when the stepped portion becomes larger, and therefore, it becomes necessary to increase the etching amount. As a result, the pattern conversion error for the pattern (wiring layer, via holes and the like) of the upper layer formed at a higher level will become larger. In addition, when an over-etching amount increases, the mark for mask alignment and the surface of the field oxide film around the mark become rough and as a result the misalignment and variation in the mask alignment become large. This is because the surface of the plasma SiO film or Si which is the underground of the mask alignment mark which is formed of Aℓ-Si, Aℓ-Si-Cu or the like on the dicing line will be made rough by chlorine-series radicals or the like used in the RIE method, thus making it difficult to effect the precise mask alignment. Thus, with the conventional multi-layered wiring structure, abnormal etching tends to be more easily caused in the upper wiring layer formed at a higher level by the presence of the stepped portion formed by formation of the lower wiring layer and via holes, and the abnormal etching causes various problems as described above. Accordingly, an object of this invention is to provide a method of manufacturing a semiconductor device having a multi-layered structure in which abnormal etching for the wiring layers and via holes can be reduced. The object of this invention can be attained by a method of manufacturing a semiconductor device according to claim 1. Preferred embodiments are listed in the dependent claims. With the above construction, since the design margins of the laminated wiring layers and via hole are made larger as they are formed at a higher level instead of being set to a preset value as in the prior art, it becomes possible to suppress occurrence of abnormal etching of the wiring layer and via hole. The design margin may be determined according to the focus margin, mask misalignment due to the mask alignment accuracy, pattern size conversion error, warp of the semiconductor substrate and irregularity of the surface of the semiconductor substrate used as parameters. According to the above method, various problems due to abnormal etching can be prevented even in the multi-layered wiring structure having three or more layers when the same multi-layer wiring process as in the prior art is effected. As a result, occurrence of an increase in the wiring resistance, wiring breakage, short-circuit, electromigration or the like can be prevented so that reduction in the circuit function and occurrence of an operation error may be prevented, thereby making it possible to manufacture a highly reliable semiconductor device at a high manufacturing yield. This invention can be more fully understood from the following detailed description when taken in conjunction with the accompanying drawings, in which: Figs. 1A to 1H are cross sectional views showing the manufacturing process of a semiconductor device having a multi-layered wiring structure according to a first embodiment of this invention in the order of the manufacturing steps; Fig. 2 is a diagram showing the relation between the design margin indicated on the ordinate and the respective steps indicated on the abscissa so as to compare the conventional case and the case of this invention; Fig. 3 is a cross sectional view showing an example of the construction of an interlaid insulation film formed between first-level and second-level wiring layers, for illustrating a semiconductor device according to a second embodiment of this invention; Fig. 4 is a cross sectional view showing another example of the construction of an interlaid insulation film formed between first-level and second-level wiring layers, for illustrating a semiconductor device according to a third embodiment of this invention; and Fig. 5 is a cross sectional view showing still another example of the construction of an interlaid insulation film formed between first-level and secondlevel wiring layers, for illustrating a semiconductor device according to a fourth embodiment of this invention. Figs. 1A to 1H show the manufacturing process of a semiconductor device having a multi-layered wiring structure according to a first embodiment of this invention in the order of the manufacturing steps, and in this embodiment, a bipolar transistor is used as an example of the semiconductor device. As shown in Fig. 1A, an N + -type impurity diffusion region (buried layer) 12 is formed in the surface area of a P-type silicon substrate (semiconductor substrate) 11. An N-type epitaxial layer 13 is formed on the substrate 11. At the time of formation of the epitaxial layer 13, N-type impurity is diffused from the impurity diffusion region 12 in upward and downward directions (that is, into the epitaxial layer 13 and the substrate 11, respectively) to form an N + -type buried layer 12 near the junction plane between the epitaxial layer 13 and the substrate 11. A P + -type isolation region 14 is formed in the epitaxial layer 13 to reach the substrate 11, thus isolating a bipolar transistor forming area from the remaining portion. An element isolation field oxide film 15 is selectively formed on the resultant structure. A P-type impurity diffusion region 16 acting as a base region is formed in the surface area of that portion of the epitaxial layer 13 (acting as a collector region) which is isolated by the isolation region 14. A first CVD-SiO 2 film 17 is formed on the exposed surface of the field oxide film 15 and substrate 11. A resistance layer 18 formed of a polysilicon layer is formed on part of the field insulation film 15 which lies on the CVD-SiO 2 film 17. A second CVD-SiO 2 film 19 is formed on the resultant structure. An opening is formed in that part of the CVD-SiO 2 film 19 which lies over the impurity diffusion region 16 and a polysilicon layer 20 having N-type impurity doped therein is formed on the CVD-SiO 2 . N-type impurity is doped into the surface area of the impurity diffusion region 16 with the polysilicon layer 20 used as an impurity source so as to form an N + -type impurity diffusion region 21 acting as an emitter region. Contact holes 22-1 and 22-2 are formed in the SiO 2 films 17 and 19 which are formed on parts of the impurity diffusion region 16 and epitaxial layer 13. Next, as shown in Fig. 1B, an Aℓ-Si layer (an Aℓ layer or another Aℓ alloy layer may be used) is formed to a thickness of 1.0 µm on the resultant structure by the sputtering method and then the Aℓ-Si layer is patterned by use of the photolithography method and RIE method. At this time, since the Aℓ-Si layer has a portion whose film thickness is increased by the presence of the stepped portion of the lower layer, etching of more than the thicknesses (1 µm) of the Aℓ-Si layer, that is, over-etching is effected. As a result, a first-level wiring layer 22 used for an emitter electrode 23-1, base electrode 23-2, collector electrode 23-3 and a peripheral wiring layer 23-4 is formed. Then, as shown in Fig. 1C, a first-level interlaid insulation film 24 formed of plasma SiO is formed to a thickness of 1.5 µm on the resultant structure by the plasma CVD method and resist etch-back method. A resist pattern (not shown) is formed on that portion of the first-level interlaid insulation film 24 which lies on the wiring layer 23-4 by the photolithography method and then etching is effected by use of the RIE method using fluorine-series gas such as C 2 F 6 , CHF 3 or SF 6 to form a first via hole 25 as shown in Fig. 1D. Also, in this case, over-etching for the thickness larger than the thickness of the interlaid insulation film 24 is effected in the same manner as in the process of pattering the first-level wiring layer 23. The design margin between the pattern of the firstlevel wiring layer 23 and the pattern of the first via hole 25 is approx. 0.6 µm. Then, second-level wiring layers 26-1 and 26-2 shown in Fig. lE are formed on the thus formed interlaid insulation film 24 formed in the same manner as is used for formation of the wiring layer 22. That is, an Aℓ-Si layer (an Aℓ layer or another Aℓ alloy layer may be used) of a thickness of 1.0 µm is first formed on the interlaid insulation film 24 and then the Aℓ-Si layer is selectively removed and patterned by the RIE method to form second-level wiring layers 26-1 and 26-2. The design margin between the pattern of the first via hole 25 and the pattern of the second-level wiring layers 26-1 and 26-2 is approx. 0.7 µm. Next, a second-level interlaid insulation film 27 formed of plasma SiO having a thickness of 1.5 µm is formed by the plasma CVD method and resist etch-back method (refer to Fig. 1F). Further, as shown in Fig. lG, a second via hole 28 is formed by use of the RIE method. At this time, in order to prevent defective etching due to the presence of the stepped portion, over-etching for a thickness larger than the thickness of the interlaid insulation film 27 is effected. The design margin between the patterns of the second-level wiring layers 26-1 and 26-2 and the pattern of the second via hole 28 is approx. 0.8 µm. Then, as shown in Fig. 1H, a third-level wiring layer 29 is formed. That is, an Aℓ-Si layer (an Aℓ layer or another Aℓ alloy layer may be used) is formed to a thickness of 1.0 µm on the second-level interlaid insulation film 27 by the sputtering method. The Aℓ-Si layer is patterned by use of the RIE method to form a third-level wiring layer 29. At the time of etching the Aℓ-Si layer, over-etching for more than the thicknesses of the Aℓ-Si layer is effected. The design margin between the pattern of the second via hole 28 and the pattern of the third-level wiring layer 29 is 1.0 to 1.1 µm. Although not shown in the drawing, insulation films such as a passivation film, bonding pad and the like are formed on the semiconductor structure shown in Fig. 1H. The passivation layer is formed after the highest-level wiring layer (the third-level wiring layer 29 in Fig. 1H) is formed, and it is formed of a single layered or multi-layered silicon nitride film, PSG (phosphor Silicate Glass) film, plasma SiO film or the like. Openings are formed in the passivation layer by use of the RIE method and bonding pads which are connected to respective wiring layers via the openings are formed on the passivation layer. The design margin between the pattern of the highest-level wiring layer and the pattern of the openings and the design margin between the pattern of the openings and the pattern of the bonding pads are respectively set larger than the above-described design margins. Fig. 2 shows the relation between the design margin (µm) indicated on the ordinate and the respective steps (A to G) indicated on the abscissa. In Fig. 2, the design margins in the respective manufacturing steps obtained in the case of using a four-layered wiring layer are shown. The design margin is a maximum permissible error. In the case of mask misalignment, for example, a misalignment of 0.3 µm is permitted on both sides of a pattern formed when the design margin is 0.6 µm. A dot-dash line indicates the design margin in the conventional case, a solid line indicates the design margin in the case of this invention, and broken lines indicate the theoretical design margin. The step A is a step of patterning the first-level wiring layer and forming the first via hole, the step B is a step of forming the first via hole and patterning the secondlevel wiring layer, the step C is a step of patterning the second-level wiring layer and forming the second via hole, the step D is a step of forming the second via hole and patterning the third-level wiring layer, the step E is a step of patterning the third-level wiring layer and forming the third via hole in the third-level interlaid insulation film, the step F is a step of forming the third via hole and patterning the fourth-level wiring layer, and the step G is a step of forming the the fourth-level wiring layer and bonding pad. As shown in the drawing, in the conventional multilayered structure, the design margins in the steps A to G are all set to the same value, that is, 0.6 µm. In contrast, in this invention, the design margin for the wiring layer and via hole formed in the higher level is set larger and is set to be larger than the corresponding theoretical value. With the multi-layered structure formed according to the method of this invention, since the design margins of the wiring layer and the like formed at a higher level are set larger with the mask alignment accuracy, pattern size conversion error, margin, warp of the semiconductor substrate and irregularity of the surface of the semiconductor substrate used as parameters, it becomes possible to suppress occurrence of abnormal etching of the wiring layer and via hole. As a result, abnormal etching of the wiring layer formed of Aℓ or Aℓ alloy in the via hole can be prevented and the step coverage in the via hole can be improved. Therefore, the following effects (1) to (4) can be attained. (1) Since abnormal etching of the wiring layer formed of Aℓ or Aℓ alloy in the via hole can be prevented, various defects caused by the stepped portion of the via hole can be eliminated, thereby enhancing the yield by 4 to 7 %. (2) Since reduction in the conduction path in the via hole caused by abnormal etching does not occur, the electromigration resistance can be enhanced so that occurrence of the electromigration can be suppressed and the lifetime of the device can be extended by approx. 20 %. (3) Since it is possible to cope with the surface irregularity which becomes larger when the wiring layer and via hole are formed at a higher level, it is not necessary to previously effect the mask alignment and etching, thereby enhancing the throughput. (4) Since the same multi-layered wiring process as in the prior art can be used and it can be performed simply by changing the pattern design, it is not necessary to develop a novel process, and the cost for the manufacturing process is the same as that of the conventional case so that the total cost can be reduced according to the improvement of the yield and throughput. In the above embodiment, an example in which the bipolar transistor is used as the semiconductor device formed in the semiconductor substrate is explained, but this invention is not limited to this example. This invention can be applied to any semiconductor device or semiconductor integrated circuit in which a multilayered structure is formed on the substrate thereof. In the above embodiment, the multi-layered structure having a three-layered wiring layer is explained as an example, but substantially the same effect can be attained for a multi-layered structure having a two- or more-layered wiring layer. Further, the method of forming the multi-layered wiring structure and the material of the wiring layer and interlaid insulation film are not limited to those described in the above embodiment. Also, the numerical values of the design margins of the wiring layer and via hole are not limited to those indicated in Fig. 2 and may be set to optimum values according to the multi-layered structure, manufacturing process, and the materials and film thicknesses of the wiring layer and interlaid insulation film. In this case, it is of course necessary to set the design margin larger for the wiring layers or the like disposed at a higher level. Further, the design margins of the wiring layer and via hole disposed at a higher level are set larger but only one of the design margins of the wiring layer and via hole disposed at a higher level may be set larger. In the structure shown in Fig. 1F, the second-level wiring layer 26-1 is formed in the first via hole 25 and the second-level interlaid insulation film 27 is buried in a small recess 26A formed in the wiring layer 26-1, but it is possible to selectively bury an On Aluminum Passivation layer into the recess. In addition, the effect can be further enhanced by applying various planarization techniques as shown in Figs. 3 to 5 to the interlaid insulation films 24 and 27. Fig. 3 is a cross sectional view showing another example of the construction of the interlaid insulation film disposed between the first-level wiring layer and the second-level wiring layer, for illustrating a second embodiment of this invention. In this case, much stress is put on the first-level wiring layer, first-level interlaid insulation film and second-level wiring layer and the corresponding portions are distinctly shown. That is, the interlaid insulation film 24 is formed to have a three-layered structure, and a first-level wiring layer 23 is formed into a preset pattern and then a first-level CVD-SiO 2 film 24-1 is formed on the resultant structure. After this, an SOG film 24-2 is formed on the CVD-SiO 2 film 24-1 and then the SOG film 24-2 is etched back to be partly partly left behind in the recessed portion of the SiO 2 film 24-1. Next, a secondlevel CVD-SiO 2 film 24-3 is formed on the SiO 2 film 24-1 and the remaining SOG film 24-2. Then, a secondlevel wiring layer 26 is formed on the CVD-SiO 2 film 24-3. The second-level wiring layer 26 is connected to the first-level wiring layer 23 via the via holes 25-1 and 25-2 if necessary. Fig. 4 shows still another example of the construction of the interlaid insulation film, for illustrating a third embodiment of this invention. The interlaid insulation film 24-4 is made flat by the bias sputtering method. Fig. 5 shows another example of the construction of the interlaid insulation film, for illustrating a fourth embodiment of this invention. In this embodiment, the interlaid insulation film 24 is formed of a CVD-SiO 2 film 24-5 and a polyimide film 24-6. After the first-level wiring layer 23 is formed into a preset pattern, the CVD-SiO 2 film 24-5 is formed on the resultant structure and then the polyimide film 24-6 is formed on the CVD-SiO 2 film 24-5 to make the surface thereof flat. Next, a second-level wiring layer 26 is formed on the polyimide film 24-6, and the second-level wiring layer 26 is connected to the first wiring layer 23 via the via holes 25-1 and 25-2, as required. In Figs. 3 to 5, the first-level interlaid insulation film 24 is explained, but a second- or higher-level interlaid insulation film can be formed with substantially the same construction.

Claims: A method of manufacturing a semiconductor device comprising the steps of: a) providing a semiconductor substrate (11) of a first conductivity type; b) forming at least one active and or at least one passive region (13, 16, 21) of a second conductivity type in a main surface area of said semiconductor substrate (11); c) forming an insulation film (15, 17, 19) on said semiconductor substrate (11); d) forming a first-level wiring layer (23-1 to 23-4) on said insulation film (15, 17, 19); e) forming a first-level interlaid insulation film (24) on said first-level wiring layer (23-1 to 23-4) having at least one first via hole (25); and f) forming a second-level wiring layer (26-1, 26-2) on said interlaid wiring layer (24); characterized by the step of g) setting the design margins of said first-level wiring layer (23-1 to 23-4), said via hole (25), and said second-level wiring layer (26-1, 26-2) progressively larger for progressively higher levels. A method of manufacturing a semiconductor device according to claim 1, characterized by determining said design margins by using at least one of the focus margin, mask misalignment due to the irregularity of the surface of said semiconductor substrate (11), mask alignment accuracy, pattern size conversion error, and a warp of said semiconductor substrate (11) as a parameter. A method of manufacturing a semiconductor device according to claim 1, characterized by electrically connecting said first-level wiring layer (23-4) to said second-level wiring layer (26-1) via said first via hole (25). A method of manufacturing a semiconductor device according to claim 1, characterized by forming said first-level interlaid insulation film (24) including an SiO 2 film (24) formed on said insulation film (15, 17, 19) and first-level wiring layer (23-1 to 23-4) by a plasma CVD method and a resist etch-back method. A method of manufacturing a semiconductor device according to claim 1, characterized by forming said first-level interlaid insulation film (24) of a first CVD-SiO 2 film (24-1) formed on said insulation film (15, 17, 19) and first-level wiring layer (23-1 to 23-4); forming an SOG film (24-2) on said first CVD-SiO 2 film (24-1) and etched back be partly left behind in a recessed portion of said first CVD-SiO 2 film (24-1); and forming a second CVD-SiO 2 film (24-3) on said first CVD-SiO 2 film (24-1) and SOG film (24-2). A method of manufacturing a semiconductor device according to claim 1, characterized by forming said first-level interlaid insulation film (24) including an SiO 2 film (24-4) formed on said insulation film (15, 17, 19) and first-level wiring layer (23-1 to 23-4) by the bias sputtering method. A method of manufacturing a semiconductor device according to claim 1, characterized by forming said first-level interlaid insulation film (24) including a CVD-SiO 2 film (24-5) formed on said insulation film (15, 17, 19) and first-level wiring layer (23-1 to 23-4) and a polyimide film (24-6) formed on said CVD-SiO 2 film (24-5). A method of manufacturing a semiconductor device according to claim 1, characterized by forming a second-level interlaid insulation film (27) having at least one second via hole (28) on said second-level wiring layer (26-1, 26-2) and forming a third-level wiring layer (29) on said second-level interlaid insulation film (27); and setting the design margins of the second via hole (28) and third-level wiring layer (29) larger as setting them at a higher level. A method of manufacturing a semiconductor device according to claim 8, characterized by determining said design margins by using at least one of the focus margin, mask misalignment due to the irregularity of the surface of said semiconductor substrate (11), mask alignment accuracy, pattern size conversion error, and warp of said semiconductor substrate (11) as a parameter. A method of manufacturing a semiconductor device according to claim 8, characterized by electrically connecting said first-level wiring layer (23-4) to said second-level wiring layer (26-1) via said first via hole (25) formed in said first-level interlaid insulation film (24). A method of manufacturing a semiconductor device according to claim 8, characterized by electrically connecting said second-level wiring layer (26-1) to said third-level wiring layer (29) via said second via hole (28) formed in said second-level interlaid insulation film (27). A method of manufacturing a semiconductor device according to claim 8, characterized by forming at least one of said first- and second-level interlaid insulation films (24, 27), including an SiO 2 film formed by a plasma CVD method and a resist etch-back method. A method of manufacturing a semiconductor device according to claim 8, characterized by forming at least one of said first- and second-level interlaid insulation films (24, 27) of a first CVD-SiO 2 film (24-1); forming an SOG film (24-2) formed on said first CVD-SiO 2 film (24-1) and etched back to be partly left behind in a recessed portion of said first CVD-SiO 2 film (24-1); and forming a second CVD-SiO 2 film (24-3) on said first CVD-SiO 2 film (24-1) and SOG film (24-2). A method of manufacturing a semiconductor device according to claim 8, characterized by forming at least one of said first- and second-level interlaid insulation films (24, 27) including an SiO 2 film (24-4) formed by the bias sputtering method. A method of manufacturing a semiconductor device according to claim 8, characterized by forming at least one of said first- and second-level interlaid insulation films (24, 27) including a CVD-SiO 2 film (24-5); and forming a polyimide film (24-6) on said CVD-SiO 2 film (24-5).

Inventors: ABE MASAHIRO, KATSURA TOSHIHIKO, MASE YASUKAZU, ABE, MASAHIRO, KATSURA, TOSHIHIKO, MASE, YASUKAZU, ABE, MASAHIRO, C/O INTELLECTUAL PROPERTY DIVISION, KATSURA, TOSHIHIKO, C/O INTELLECTUAL PROPERTY DIV., MASE, YASUKAZU, C/O INTELLECTUAL PROPERTY DIVISION
Applicants: TOSHIBA KK, KABUSHIKI KAISHA TOSHIBA
Application year: 1990
Main classification: H01L21
IPC codes: H01L23, H01L27, H01L21, H01L29