Thin-film electroluminescence apparatus

Abstract: An electroluminescence apparatus in which a voltage is applied to a lamination of a fluorescent material layer and a dielectric layer (4) through a pair of electrodes one of which is light-transmissible to extract fluorescence. A reflecting mirror layer (3) is provided on the lamination while a particular relation­ ship is established between the refractive index and the thickness of the lamination, thereby improving the efficiency with which the fluorescence is extracted.

Description: BACKGROUND OF THE INVENTION This invention relates to thin-film electroluminescence apparatus and, more particularly, to a thin-film electroluminescence apparatus suitable for thin-film flat displays for use with information terminal of office automation systems. A display based on a thin-film electroluminescence (hereinafter referred to simply as "thin-film EL") apparatus has been proposed which has a construction described below. Fig. 1 shows a structure in which dielectric layers 4 and 6 are provided on two sides of a fluorescent material layer 5, and these layers are interposed between a transparent electrode 2 and a back electrode 7. Thin-film EL displays in which ZnS: Tb, F for green luminescence or ZnS: Mn for orange luminescence is used for the fluorescent material layer 5 are known. In all cases, emitted light is extracted through a glass surface on one side of the layers where the transparent electrode is provided, and the intensity of light thereby extracted is at most about 10% of that of the light emitted from the emission center of the fluorescent material layer. This cause is based on the Fresnel's law, that is 90% or more of the light emitted from the emission center of the fluorescent material layer is reflected by the interface between the fluorescent material layer and the dielectric layer or between the latter and the transparent electrode. This is because the angle of total reflection to the emission wavelength is considerably small, that is, it is about 25°. On the other hand, a method is known in which a Fabry-Perot interferometer is used for selecting the wavelength of light emitted from a light source having a wide range of emission wavelength. The Fabry-Perot interferometer allows transmission of light only when the light satisfies the following optical interference condition: L·q = K·π (π: circular constant) where L represents the distance between a pair of reflecting mirrors 8 disposed parallel to each other as shown in Figs. 2a and 2b, q represents the number of waves between the reflecting mirrors, and K is a positive integer. It has been actually found that as the reflectivity R of the reflecting mirrors is increased, the half width of the spectrum of light becomes narrower, as shown in Figs. 3a and 3b. This phenomenon is described on pages 51 to 56 of Laser Physics Nyumon (Introduction to Laser Physics) written by Khoichi Shimota (published on Apr. 22, 1983 by Iwanami Shoten). It is also known that this interferometer can be used as a laser resonator if a laser medium is inserted in the interferometer. A thin film interposed between repetition multilayer films (multilayer-film optical interference filter) has a structure such as that shown in Fig. 4. It has been revealed that the interference characteristics of a thin film having this type of structure including reflecting layers formed on two sides of the film and having a high reflectivity ensure the same effects as the Fabry-Perot interferometer, as shown in Fig. 5. This type of thin film is formed by laminating optical thin films having different refractive indexes while setting the film thicknesses so as to satisfy the conditions for prevention of reflection with respect to the emission wavelength λ, that is, (n·d = (1/4 + m/2)·λ where n represents the refractive index, d represents the film thickness, and m = 0, 1, 2 ...). Explanations relating to this thin film are found on pages 30 to 34 and 98 to 129 of Optical Thin Film edited by Shiro Fujiwara (published on Feb., 25, 1985 by Kyoritsu Shuppan). The thin-film EL apparatus shown in Fig. 1 has an advantage in being easily manufactured, and thin-film EL displays based on this apparatus have been put to practical use. However, colors of these displays are limited to orange based on the use of ZnS: Mn for the fluorescent material layer and green based on the use of ZnS: Tb. To manufacture a thin-film EL display capable of displaying three elementary colors, materials for the fluorescent material layer are required which enable emission of light having red and blue emission colors with a high emission efficiency, but fluorescent layer materials have not yet been developed for realization of a practical display. Further it has been very important to improve the emission efficiency. SUMMARY OF THE INVENTION The present invention is devised in view of the above-mentioned problems sticking to the prior art electroluminescent apparatus, and accordingly, a main object of the present invention is to provide a thin-film electroluminescence apparatus which can produce bright light of three elementary colors with a high degree of luminescent efficiency. To the end according to the present invention, there is provided a thin-film electroluminescence apparatus comprising a fluorescent material layer for emitting light having a wavelength of λ; a dielectric material layer laid on at least one side of the fluorescent material layer, the fluorescent material layer and the dielectric material layer forming, in combination, a laminated structure body having a film thickness of d; electrode layers at least one of which is light-transmissible for applying a voltage to said laminated structure body; and reflector layers having reflectivities of R1, R2 with respect to the light having the wavelength of λ and laid on both sides of said fluorescent material layer or the laminated structure body; the fluorescent material layer or said laminated structure body having a refractive index n which has the following relationship with respect to the film thickness d of the laminated body: d = K·n⁻¹·λ/2 where K is a positive integer equal to or greater than one. With this arrangement, a means which has the same function as a Fabry-Perot interferometer can be provided in the thin-film EL apparatus, and light spontaneously emitted from the fluorescent material layer can be extracted while the direction of transmission is uniformly set to a direction perpendicular to the thin film surface by this interferometer. Light which is emitted from the emission center in the fluorescent material layer and which has a desired wavelength can therefore be extracted through the display surface at an improved efficiency. It is thereby possible to obtain three elementary colors, red, blue and green, with an emission efficiency ten times higher than that attained by the conventional apparatus. According to the present invention, in its third aspect, there is provided a thin-film electro-luminescence apparatus comprising: a pair of electrode layers at least one of which is light-transmissible; a fluorescent material layer or a laminated structure of a fluorescent material layer and a dielectric material layer, a voltage being applied to the fluorescent material layer or the laminated structure through the pair of electrode layers; and a multilayer-film optical interference filter capable of selectively transmitting light emitted from the fluorescent material layer and having an arbitrary wavelength, the optical interference filter being provided on a light extraction side of the fluorescent material layer or the laminated structure. There is also provided a thin-film electroluminescence apparatus comprising: a pair of electrode layers at least one of which is light-transmissible; and a fluorescent material layer or a laminated structure of a fluorescent material layer and a dielectric material layer, a voltage being applied to the fluorescent material layer or the laminated structure through the pair of electrode layers, the fluorescent material layer and the laminated structure of fluorescent and dielectric material layers constituting a multilayer-film optical interference filter capable of selectively transmitting light emitted from the fluorescent material layer and having an arbitrary wavelength. Alternatively, the arrangement may be such that multilayer-film optical interference filters for allowing transmission of light of different wavelengths are provided on transparent electrodes on two sides of the EL apparatus to obtain different luminescence colors. With this construction, a means which has the same function as a Fabry-Perot interferometer can be provided in the thin-film EL apparatus, and light spontaneously emitted from the fluorescent material layer can be extracted while the direction of transmission is uniformly set with respect to an emission wavelength selected as desired. Light which is emitted from the emission center in the fluorescent material layer and which has a desired wavelength can therefore be extracted through the display surface at an improved efficiency, thereby obtaining three elementary colors, red, blue and green with an emission efficiency ten times higher than that attained by the conventional apparatus. The use of the multilayer-film optical interference filter serving as a reflecting mirror enables a reduction in attenuation of extracted light and, hence, an improvement in extraction efficiency as compared with the apparatus in which metallic thin films are used. It is also possible to extract light having different wavelengths through the respective extraction surfaces. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a cross-sectional view of the structure of a conventional thin-film EL apparatus; Figs. 2a and 2b are diagrams of a Fabry-Perot interferometer; Figs. 3a and 3b are diagrams of the principle of a function of the Fabry-Perot interferometer; Fig. 4 is a diagram of a multilayer-film optical interference filter; Fig. 5 is a diagram of a basic characteristic of the multilayer-film optical interference filter; Fig. 6 is a cross-sectional view of the basic construction of a thin-film EL apparatus which represents an embodiment of the present invention; Fig. 7 is a diagram of luminance-voltage characteristics of the thin-film EL apparatus in accordance with the embodiment; Figs. 8 to 10 are cross-sectional views of the basic constructions of thin-film EL apparatus which represent other embodiments of the present invention; Figs. 11 to 13 are diagrams of spectra of light emitted by the thin-film EL apparatus which represent the embodiments of the present invention; and Figs. 14-16 are cross-sectional views of the basic constructions of thin-film EL apparatus which represent further embodiments of the present invention. DESCRIPTION OF THE PREFERRED EMBODIMENTS Explanation will be made of preferred embodiments of the present invention with reference to the drawings. Embodiment 1 Fig. 6 shows in section a basic construction of a thin-film EL apparatus in accordance with the present invention. A transparent ITO electrode 2 is formed on a glass substrate 1, a reflecting mirror layer 3 is formed on the electrode 2, and a first dielectric layer 4 having a dielectric constant ε1 and a thickness d1 is formed on the reflecting mirror layer 3. A fluorescent material layer 5 having a thickness d3 is formed on the dielectric layer 4, and a second dielectric layer 6 having a dielectric constant ε2 and a thickness d2 is successively superposed. Back electrodes 7 having the function of a reflecting mirror layer as well as the function of an electrode layer are formed on the second dielectric layer 6. A thin-film EL apparatus having this structure was manufactured, and the refractive index n of the lamination of the first dielectric layer, the fluorescent material layer and the second dielectric layer with respect to the wavelength of light emitted from the fluorescent material layer was measured with an ellipsometer. The total thickness d of this lamination is expressed by d = d1 + d2 + d3. Each factor is determined so that the following relationship is established among the fluorescent material layer emission wavelength λ, the refractive index n and the total thickness d: d = K·n⁻¹·λ/2 where K is a positive integer equal to or larger than 1. It was confirmed that the thin-film EL apparatus in accordance with the first embodiment of the present invention shown in Fig. 6 had a voltage-luminance characteristic such as that shown in Fig. 7(a), and that the luminance from the fluorescent material layer could be efficiently extracted through the luminescence surface. The fluorescent material layer was formed by using a fluorescent material selected from the group consisting of ZnS: Mn which emits orange light with a main emission wavelength of 580 nm, ZnS: Tb, F or ZnS: Tb, P which emits green light with a main emission wavelength of 544 nm, CaS: Eu or ZnS: Sm which emits red light with a main emission wavelength of 650 nm, and SrS: Ce or ZnS: Tm which emits blue light with a wavelength of about 480 nm. Yttrium oxide films, tantalum oxide films, aluminum oxide films, silicon oxide films, silicon nitride films and perovskite-type oxide dielectric films represented by a strontium titanate film were used for the first and second dielectric films. Table 1 shows the characteristics of the dielectric films used for the present invention. The combination of the dielectric layers and the fluorescent material layer and the total thickness d of the lamination structure of this embodiment were determined by the equation (2) from values of the emission wavelength λ and the refractive index n of the lamination structure of the dielectric layers and the fluorescent material layer determined by the ellipsometer with respect to the emission wavelength. It was confirmed that the present invention enabled manufacture of a thin-film EL apparatus capable of emitting light with a desired emission wavelength at a high efficiency. It was demonstrated that a thin-film EL apparatus manufactured by using ZnS: Tb, F, ZnS: Sm, or SrS: Ce for the fluorescent material layer was capable of emitting light with a spectrum reduced in half width as compared with the conventional EL apparatus having no reflecting mirror layer with emission efficiency which is 5 to 15 times higher than attained by the same conventional EL apparatus. The increase in the emission efficiency was remarkably large when the reflectivities of the reflecting mirror layers were 0.7 or higher. The reflectivity of one of the two reflecting mirror layers which is located on the luminescence extraction side was set to be smaller than that of the other. Incidentally, there are two luminescence extraction surfaces, one on the glass substrate side and the other on the back electrode side. On the glass substrate side, light emitted from the fluorescent material layer passes through the glass substrate after passing through the reflecting mirror, and a part of the light is absorbed or does not go out of the glass substrate into the outside air layer owing to the difference between the refractive indexes of the glass substrate and the air layer. On the back electrode side, light is directly emitted to the air layer and the emission luminance is therefore higher. Embodiment 2 A second embodiment of the present invention will be described below with reference to the accompanying drawings. Fig. 8 shows in section a basic construction of a thin-film EL apparatus in accordance with the second embodiment of the present invention. A transparent ITO electrode 12 is formed on a glass substrate 11, a first dielectric layer 13 having a dielectric constant ε1 and a thickness d1 is formed on the electrode 12, and a reflecting mirror layer 14 is formed on the first dielectric layer 13. A fluorescent material layer 15 having a thickness d3 is formed on the reflecting mirror layer 14, and a second dielectric layer 16 having a dielectric constant ε2 and a thickness d2 is successively superposed. Back electrodes 17 having the function of a reflecting mirror layer as well as the function of an electrode layer are formed on the second dielectric layer 16. A thin-film EL apparatus having this structure was manufactured and the refractive index n of the lamination of the fluorescent material layer and the second dielectric layer with respect to the wavelength of light emitted from the fluorescent material layer was measured with an ellipsometer. The total thickness d of this lamination is expressed by d = d2 + d3. Each factor is determined so that the following relationship is established among the fluorescent material layer emission wavelength λ, the refractive index n and the total thickness d: d = K·n⁻¹·λ/2 where K is a positive integer equal to or larger than 1. It was confirmed that this thin-film EL apparatus had a voltage-luminance characteristic similar to that of the first embodiment, and that the luminance from the fluorescent material layer could be efficiently extracted through the luminescence surface. The fluorescent material layer was formed by using a fluorescent material selected from the group consisting of ZnS: Mn which emits orange light with a main emission wavelength of 580 nm, ZnS: Tb, F or ZnS: Tb, P which emits green light with a main emission wavelength of 544 nm, CaS: Eu or ZnS: Sm which emits red light with a main emission wavelength of 650 nm, and SrS: Ce or ZnS: Tm which emits blue light with a wavelength of about 480 nm. Yttrium oxide films, tantalum oxide films, aluminum oxide films, silicon oxide films, silicon nitride films or perovskite-type oxide dielectric films represented by a strontium titanate film were used for the first and second dielectric films. The characteristics of the dielectric films used for the invention are shown in Table 1. The combination of the dielectric layers and the fluorescent material layer and the total thickness d of this embodiment were determined by the equation (4) from values of the emission wavelength λ and the refractive index n of the lamination structure of the dielectric layers and the fluorescent material layer determined by the ellipsometer with respect to the emission wavelength. It was confirmed that the present invention enabled manufacture of a thin-film EL apparatus capable of emitting light with a desired emission wavelength at a high efficiency. It was demonstrated that a thin-film EL apparatus manufactured by using ZnS: Tb, F, ZnS: Sm, or SrS: Ce for the fluorescent material layer was capable of emitting light with a spectrum reduced in half width as compared with the conventional EL apparatus having no reflecting mirror layer with an emission efficiency which is 5 to 15 times higher than that attained by the same conventional EL apparatus. The increase in the emission efficiency was markedly large when the reflectivities of the reflecting mirror layers were 0.7 or higher. The reflectivity of one of the two reflecting mirror layers located on the luminescence extraction side was set to be smaller than that of the other. In the arrangement of this embodiment, the luminance was higher when the light was extracted on the back electrode side. Embodiment 3 A third embodiment of the present invention will be described below with reference to the accompanying drawings. Fig. 9 shows in section a basic construction of a thin-film EL apparatus in accordance with the third embodiment of the present invention. A metallic electrode 22 having the function of a reflecting mirror layer as well as the function of an electrode layer is formed on a glass substrate 21, and a first dielectric layer 23 having a dielectric constant ε1 and a thickness d1 is formed on the electrode 22. A fluorescent material layer 24 having a thickness d3 is formed on the first dielectric layer 23, and a second dielectric layer 25 having a dielectric constant ε2 and a thickness d2 is successively superposed. Back electrodes 26 having the function of a reflecting mirror layer as well as the function of an electrode layer are formed on the second dielectric layer 25. A thin-film EL apparatus having this structure was manufactured and the refractive index n of the lamination of the first dielectric layer, the fluorescent material layer and the second dielectric layer with respect to the wavelength of light emitted from the fluorescent material layer was measured with an ellipsometer. The total thickness d of this lamination is expressed by d = d1 + d2 + d3. Each factor is determined so that the following relationship is establish among the fluorescent material layer emission wavelength λ, the refractive index n and the total thickness d: d = K·n⁻¹·λ/2 where K is a positive integer equal to or larger than 1. It was confirmed that the thin-film EL apparatus of this embodiment had a voltage-luminance characteristic similar to those of the above-described embodiment, and that the luminance from the fluorescent material layer could be efficiently extracted through the luminescence surface. The fluorescent material layer was formed by using a fluorescent material selected from the group consisting of AnS: Mn which emits orange light with a main emission wavelength of 580 nm, ZnS: Tb, F or ZnS: Tb, P which emits green light with a main emission wavelength of 544 nm, CaS: Eu or ZnS: Sm which emits red light with a main emission wavelength of 650 nm, and SrS: Ce or ZnS: Tm which emits blue light with a wavelength of about 480 nm. Yttrium oxide films, tantalum oxide films, aluminum oxide films, silicon oxide films, silicon nitride films or perovskite-type oxide dielectric films represented by a strontium titanate film were used for the first and second dielectric films. The characteristics of the dielectric films used for the invention are shown in Table 1. The combination of the dielectric layers and the fluorescent material layer and the total thickness d of the lamination structure of this embodiment were determined by the equation (6) from values of the emission wavelength λ and the refractive index n of the lamination structure of the dielectric layers and the fluorescent material layer determined by the ellipsometer with respect to the emission wavelength. It was confirmed that the present invention enabled manufacture of a thin-film EL apparatus capable of emitting light with a desired emission wavelength at a high efficiency. It was demonstrated that a thin-film EL apparatus manufactured by using ZnS: Tb, F, ZnS: Sm, or SrS: Ce for the fluorescent material layer was capable of emitting light with a spectrum reduced in half width as compared with the conventional EL apparatus having no reflecting mirror layer with an emission efficiency which is 5 to 15 times higher than that attained by the same conventional EL apparatus. The increase in the emission efficiency was remarkably large when the reflectivities of the reflecting mirror layers were 0.7 or higher. The reflectivity of one of the two reflecting mirror layers located on the luminescence extraction side was set to be smaller than that of the other. In the arrangement of this embodiment, the luminance was higher when the light was extracted on the back electrode side. Embodiment 4 A fourth embodiment of the present invention will be described below with reference to the accompanying drawings. Fig. 10 shows in section a basic construction of a thin-film EL apparatus in accordance with the fourth embodiment of the present invention. A transparent ITO electrode 32 is formed on a glass substrate 31, a first dielectric layer 33 having a dielectric constant ε1 and a thickness d1 is formed on the electrode 32, and a reflecting mirror layer 34 is formed on the first dielectric layer 33. A fluorescent material layer 35 having a thickness d3 is formed on the first dielectric layer 34, and another reflecting mirror layer 36 and a second dielectric layer 37 having a dielectric constant ε2 and a thickness d2 are successively superposed on the fluorescent material layer 35. Back electrodes 38 are formed on the second dielectric layer 37. A thin-film EL apparatus having this structure was manufactured and the refractive index n of the fluorescent material layer interposed between the reflecting mirrors with respect to the wavelength of light emitted from the fluorescent material layer was measured with an ellipsometer. Each factor is determined so that the following relationship is established among the fluorescent material layer emission wavelength λ, the refractive index n and the thickness d3: d3 = K·n⁻¹·λ/2 where K is a positive integer equal to or larger than 1. It was confirmed that the thin-film EL apparatus of this embodiment also had a voltage-luminance characteristic similar to that of the first embodiment, and that the luminance from the fluorescent material layer could be efficiently extracted through the luminescence surface. The fluorescent material layer was formed by using a fluorescent material selected from the group consisting of AnS: Mn which emits orange light with a main emission wavelength of 580 nm, ZnS: Tb, F or ZnS: Tb, P which emits green light with a main emission wavelength of 544 nm, CaS: Eu or ZnS: Sm which emits red light with a main emission wavelength of 650 nm, and SrS: Ce or ZnS: Tm which emits blue light with a wavelength of about 480 nm. Yttrium oxide films, tantalum oxide films, aluminum oxide films, silicon oxide films, silicon nitride films or perovskite-type oxide dielectric films represented by a strontium titanate film were used for the first and second dielectric films. The thickness d3 of the fluorescent material layer of this embodiment was determined on the basis of the equation (7) from values of the emission wavelength λ and the refractive index n of the lamination structure of the dielectric layers and the fluorescent material layer determined by the ellipsometer with respect to the emission wavelength. It was confirmed that the present invention enabled manufacture of a thin-film EL apparatus capable of emitting light with a desired emission wavelength at a high efficiency. It was demonstrated that a thin-film EL apparatus manufactured by using ZnS: Tb, F, ZnS: Sm, or SrS: Ce for the fluorescent material layer was capable of emitting light with a spectrum reduced in half width as compared with the conventional EL apparatus having no reflecting mirror layer with an emission efficiency which is 5 to 15 times higher than that attained by the same conventional EL apparatus. The increase in the emission efficiency was remarkably large when the reflectivities of the reflecting mirror layers were 0.7 or higher. The reflectivity of one of the two reflecting mirror layers located on the luminescence extraction side was set to be smaller than that of the other. In the arrangement of this embodiment, the luminance was higher when the light was extracted on the electrode side. It was confirmed that the present invention enabled manufacture of a thin-film EL apparatus capable of emitting light with a desired emission wavelength with a high efficiency. The increase in the emission efficiency was greater as the half width with respect to the selected emission wavelength was reduced. The reflectivity of the reflecting mirror layer formed of the optical interference multilayer-film filter where the luminescence was extracted was set to be smaller than that of the reflectivity of the back electrodes. Figs. 11, 12, and 13 show spectra of a thin-film EL apparatus manufactured by using ZnS: Tb, F, ZnS: Sm, and SrS: Ce for the fluorescent material layer. It was demonstrated that the present invention enabled manufacture of a thin-film EL apparatus capable of emitting light of a desired wavelength with an efficiency which is 5 to 80 times higher than that attained by the conventional thin-film EL apparatus having no multilayer-film optical Interference filter and no reflecting mirror layer, and also capable of selecting desired luminescence colors that is, capable of emitting three elementary colors, green, red and blue. These effects were improved as the value of K was reduced, and the increase in emission efficiency was remarkably large when the half width with respect to the selected emission wavelength was reduced. The reflectivities of the two reflecting mirror layers, i.e., those of the optical interference filter and the metallic electrodes were selected in such a manner that the reflectivity of the optical interference filter on the luminescence extraction side was smaller. The construction in which an optical interference filter is used to constitute one of the two reflecting mirror layers ensures a reduction in the half width with respect to the emission wavelength as well as an increase in the optical amplification as compared with the case where the two reflecting mirror layers are single-layer films formed of metallic thin films or the like. Next, a multilayer-film optical interference filter capable of effecting electroluminescence will be described below. Embodiment 5 A seventh embodiment of the present invention will be described below with reference to the accompanying drawings. Fig. 14 shows in section a basic construction of a thin-film EL apparatus in accordance with the seventh embodiment of the present invention. A transparent ITO electrode 62 is formed on a glass substrate 61, a multilayer-film optical interference filter layer 63 is formed on the electrode 62, and a first dielectric layer 64 having a dielectric constant ε1 and a thickness d1 is formed on the filter layer 63. A fluorescent material layer 65 having a thickness d3 is formed on the dielectric layer 64, and a second dielectric layer 66 having a dielectric constant ε2 and a thickness d2 is successively superposed. Back electrodes 67 having the function of a reflecting mirror layer as well as the function of an electrode layer are formed on the second dielectric layer 66. A thin-film EL apparatus having this structure was manufactured and the refractive index n of the lamination of the first dielectric layer, the fluorescent material layer and the second dielectric layer with respect to the wavelength of light emitted from the fluorescent material layer was measured with an ellipsometer. The total thickness d of this lamination is expressed by d = d1 + d2 + d3. Each factor is determined so that the following relationship is established between the fluorescent material layer emission wavelength λ, the refractive index n and the total thickness d: d = K·n⁻¹·λ/2 where K is a positive integer equal to or larger than 1. It was confirmed that the thin-film EL apparatus of this embodiment shown in Fig. 14 had a voltage-luminance characteristic such as that shown in Fig. 7(b), and that the luminance from the fluorescent material layer could be efficiently extracted through the luminescence surface. The fluorescent material layer was formed by using a fluorescent material selected from the group consisting of ZnS: Mn which emits orange light with a main emission wavelength of 580 nm, ZnS: Tb, F or ZnS: Tb, P which emits green light with a main emission wavelength of 544 nm, CaS: Eu or ZnS: Sm which emits red light with a main emission wavelength of 650 nm, and SrS: Ce or ZnS: Tm which emits blue light with a wavelength of about 480 nm. Yttrium oxide films, tantalum oxide films, aluminum oxide films, silicon oxide films, silicon nitride films or perovskite-type oxide dielectric films represented by a strontium titanate film were used for the first and second dielectric films. The characteristics of the dielectric films used for the invention are shown in Table 1. The combination of the dielectric layers and the fluorescent material layer and the total thickness d of the lamination structure of this embodiment were determined by the equation (2) from values of the emission wavelength λ and the refractive index n of the lamination structure of the dielectric layers and the fluorescent material layer determined by the ellipsometer with respect to the emission wavelength. It was confirmed that the present invention enabled manufacture of a thin-film EL apparatus capable of emitting light with a desired emission wavelength at a high efficiency. It was demonstrated that the present invention enabled manufacture of a thin-film EL apparatus capable of emitting light of a desired wavelength with an efficiency which is 5 to 80 times higher than that attained by the conventional thin-film EL apparatus having no multilayer-film optical interference filter and no reflecting mirror layer, and also capable of selecting luminescence colors, that is capable of emitting the three elementary colors, green, red and blue. These effects were improved as the value of K was reduced, and the increase in the emission efficiency was remarkably large when the half width with respect to the selected emission wavelength was reduced. The reflectivities of the two reflecting mirror layers, i.e., those of the optical interference filter and the metallic electrodes were selected in such a manner that the reflectivity of the optical interference filter on the luminescence extraction side was smaller. In the arrangement of this embodiment, the luminance was higher when the light is extracted on the side of the back electrode side. Embodiment 6 An eighth embodiment of the present invention will be described below with reference to the accompanying drawings. Fig. 15 shows in section a basic construction of a thin-film EL apparatus in accordance with the eighth embodiment of the present invention. A transparent ITO electrode 72 is formed on a glass substrate 71, a first dielectric layer 73 having a dielectric constant ε1 and a thickness d1 is formed on the electrode 72, and a multilayer-film optical interference filter layer 74 having the function of a reflecting mirror layer also is formed on the first dielectric layer 73. A fluorescent material layer 75 having a thickness d3 is formed on the filter layer 74, and a second dielectric layer 76 having a dielectric constant ε2 and a thickness d2 is successively superposed. Back electrodes 77 having the function of a reflecting mirror layer as well as the function of an electrode layer are formed on the second dielectric layer 76. A thin-film EL apparatus having this structure was manufactured and the refractive index n of the lamination of the fluorescent material layer and the second dielectric layer with respect to the wavelength of light emitted from the fluorescent material layer was measured with an ellipsometer. The total thickness d of this lamination is expressed by d = d2 + d3. Each factor is determined so that the following relationship is established among the fluorescent material layer emission wavelength λ, the refractive index n and the total thickness d: d = K·n⁻¹·λ/2 where K is a positive integer equal to or larger than 1. It was confirmed that the thin-film EL apparatus of this embodiment shown in Fig. 15 had a voltage-luminance characteristic such as that shown in Fig. 7(b), and that the luminance from the fluorescent material layer could be efficiently extracted through the luminescence surface. The fluorescent material layer was formed by using a fluorescent material selected from the group consisting of ZnS: Mn which emits orange light with a main emission wavelength of 580 nm, ZnS: Tb, F or ZnS: Tb, P which emits green light with a main emission wavelength of 544 nm, CaS: Eu or ZnS: Sm which emits red light with a main emission wavelength of 650 nm, and SrS: Ce or ZnS: Tm which emits blue light with a wavelength of about 480 nm. Yttrium oxide films, tantalum oxide films, aluminum oxide films, silicon oxide films, silicon nitride films or perovskite-type oxide dielectric films represented by a strontium titanate film were used for the first and second dielectric films. The characteristics of the dielectric films used for the invention are shown in Table 1. The combination of the dielectric layers and the fluorescent material layer and the total thickness d of the lamination structure of this embodiment were determined by the equation (14) from values of the emission wavelength λ and the refractive index n of the lamination structure of the dielectric layers and the fluorescent material layer determined by the ellipsometer with respect to the emission wavelength. It was confirmed that the present invention enabled manufacture of a thin-film EL apparatus capable of emitting light with a desired emission wavelength at a high efficiency. It was demonstrated that the thin-film EL apparatus manufactured by using ZnS: Tb, F, ZnS: Sm, and SrS: Ce for the fluorescent material layer was capable of emitting light with a spectrum reduced in half width as compared with the conventional thin-film EL apparatus having no optical interference filter and no reflecting mirror layer with an efficiency which is 5 to 80 times higher than that attained by the same conventional EL apparatus, and also capable of selecting desired luminescence color that is capable of emitting the three elementary colors, green, red and blue as desired. The increase in the emission efficiency was remarkably large when the half width with respect to the selected emission wavelength was reduced. The reflectivities of the two reflecting mirror layers including that of the optical interference filter were set in such a manner that the reflectivity on the luminescence extraction side was lower. In the arrangement of this embodiment, the luminance was higher when the light is extracted on the back electrode side. Embodiment 7 A tenth embodiment of the present invention will be described below with reference to the accompanying drawings. Fig. 16 shows in section a basic construction of a thin-film EL apparatus in accordance with the tenth embodiment of the present invention. A transparent ITO electrode 96 is formed on a glass substrate 95, a multilayer-film optical interference filter layer 97 for allowing transmission of light having wavelengths centered at a desired emission wavelength λ1 is formed on the electrode 96, and a first dielectric layer 98 having a dielectric constant ε1 and a thickness d1 is formed on the filter layer 97. Next, a fluorescent material layer 99 having a thickness d3 is formed on the first dielectric layer 98, and a second dielectric layer 100 having a dielectric constant ε2 and a thickness d2 is successively superposed. On the second dielectric layer 100 are successively formed a multilayer film optical interference filter layer 101 for allowing transmission of light having wavelengths centered at a desired emission wavelength λ2 (different from λ1) and transparent electrodes 102. A thin- film EL apparatus having this structure was manufactured and the refractive index n of the lamination of the first dielectric layer, the fluorescent material layer and the second dielectric layer with respect to the wavelength of light emitted from the fluorescent material layer were measured with an ellipsometer. The total thickness d of this lamination is expressed by d = d1 + d2 + d3. Each factor is determined so that the following relationship is established among the fluorescent material layer emission wavelength λ, the refractive index n and the total thickness d: d = K·n⁻¹·λ/2 where K is a positive integer equal to or larger than 1. It was confirmed that the thin-film EL apparatus in accordance with the tenth embodiment of the present invention shown in Fig. 16 had a voltage-luminance characteristic such that the luminance could be efficiently extracted from the fluorescent material layer through the luminescence surface. This effect is considered to be explained by the fact that the multilayer film optical interference filters serve as reflecting mirror layers and that the lamination of the first and second dielectric layers and the fluorescent material layer constitutes a Fabry-Perot interferometer. The fluorescent material layer was formed by using a fluorescent material selected from the group consisting of ZnS: Mn which has a refractive index of about 2.4 and which emits orange light with a main emission wavelength of 580 nm, and SrS: Ce, K, Eu, ZnS: PrF3 or SrS: Pr, F which emits white light. Yttrium oxide films, tantalum oxide films, aluminum oxide films, silicon oxide films, silicon nitride films or perovskite-type oxide dielectric films represented by a strontium titanate film were used for the first and second dielectric films. In accordance with the present invention, thin film EL apparatus capable of emitting light of the desired wavelengths at an improved efficiency are manufactured, thereby realizing full-color flat displays used as OA system terminals, TV image display units, view finder units and so on.

Claims: A thin-film electroluminescence apparatus comprising: a pair of electrode layers, formed on a transparent glass substrate, at least one of which is light-transmissible; a fluorescent material layer or a laminated structure of fluorescent and dielectric material layers, a voltage being applied to said fluorescent material layer or said laminated structure through said pair of electrode layers; and characterized in that reflecting mirror layers are provided on two sides of said fluorescent material layer or said laminated structure of fluorescent and dielectric material layers, said reflecting mirror layers having a reflectivity equal to or larger than 0.7 and smaller than 1 with respect to a wavelength λ of light emitted from said fluorescent material layer and that the following relationship is established between the refractive index n and thickness d of said fluorescent material layer or said laminated structure of fluorescent and dielectric material layers: d = k*n⁻¹*λ/2 where k is a positive integer equal to or larger than 1. A thin-film electroluminescence apparatus as set forth in claim 1, characterized in that said fluorescent material layer is made of one or more of materials selected from a group consisting of ZnS : Tb, F, ZnS : Tb, P, CaS : Eu, ZnS : Sm, SrS : Ce, and ZnS : Tm, and said dielectric layer is made of a materials selected from a group consisting of SiO₂, Al₂O₃, Ta₂O₅, HfO₂, Y₂O₃, Si-O-N, Si₃N₄, PbTiO₃, α-BaTiO₃, SrTiO₃, Ba(Sn, Ti)O₃, Sr(Zr, Ti)O₃, BaTa₂O₆ and PbNb₂O₆. A thin-film layer electroluminescence apparatus as set forth in claim 1, characterized in that one of said electrode layers has the reflectivity of said reflecting mirror layers. A thin-film electroluminescence apparatus as set forth in claim 1, characterized in that each of said reflecting mirror layers is an interface at a side of one of said electrode layers or said dielectric material layer.

Inventors: ABE ATSUSHI, KUWATA JUN, ABE, ATSUSHI, KUWATA, JUN
Applicants: MATSUSHITA ELECTRIC IND CO LTD, MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
Application year: 1990
Main classification: H05B33
IPC codes: H05B33