Recording medium, recording method, and readout method

Abstract: A recording medium comprises an electroconductive oxide film held between a substrate and an insulating oxide film. A recording method comprises applying locally a voltage onto the medium to form a portion different in electric resistance or oxygen content in the electroconductive oxide film. A record-readout method comprises applying a voltage to the electroconductive oxide film and having information recorded thereon, detecting the intensity of current flowing through a recorded portion to read out the recorded information.

Description: This invention relates to a method of recording information on a recording medium, a method of reading information from a recording medium, methods of erasing information from a recording medium, and to a new use of an electroconductive oxide film disposed between a substrate and an insulating oxide film. In recent years information recording media, such as video discs and digital audio discs, and their applications, such as computers and related apparatus, have become increasingly important in the electronics industry. Extensive research and development has been conducted in the field of information recording media. The performance required for information recording media obviously depends on the particular field of application, but generally high density and a large recording capacity are desired. Heretofore, semiconductor memory materials and magnetic memory materials, employing a semiconductor or a magnetic substance respectively, have mainly been used as information recording media. Recently, however, as a result of progress in laser technology, inexpensive and high density recording media using optical memory materials which employ, for example, an organic thin film such as an organic pigment, a photopolymer or the like, have become feasible. Optical memory makes possible high density recording and reading at a micrometre level by using recesses or protections on the recording medium surface, or using a difference in reflectivity of different parts of the surface of a recording medium, to store information. Such recording media comprise a thin film of metal, metal compound, organic pigment or the like. Information may be recorded on the material employed by boring holes, or changing the reflectivity by evaporation or fusion by means of heat generated by a laser beam. In these methods of recording information the recording density is dependent upon the spot diameter of the laser beam employed. Currently however, due to the rapid advance of image processing, a reduction in size of high density and large capacity memory devices is desired. Recently, the technique of scanning tunnel microscopy (hereinafter referred to as "STM") has been developed, which makes it feasible to observe directly the electronic structure of atoms on the surface of conductors (see G.Bining et al., Helvetica Physica Acta, 55 726 (1982)). By using STM, a real spatial image, whether of a single crystal or of amorphous matter, can be measured advantageously without impairing the medium by the applied electric current and with low electric power. Further, the STM observation may be conducted in atmospheric conditions and various materials may be used. Therefore, STM is a promising technique in a variety of fields of application. STM uses a tunnel current which flows between a metal probe and an electroconductive substance when an electric voltage is applied therebetween and the probe and the substance are spaced apart by approximately 1 nm. The rate of flow of tunnel current is extremely sensitive to changes in the distance between the probe and the substance. Therefore, scanning the probe over the surface of the electrode conductive substance while keeping the tunnel current constant can provide a representation of the real spatial surface structure of the substance, and can simultaneously give various information about the entire electron cloud of the surface atoms. In the past, analysis by STM has been applicable only to electrconductive substances. However, more recently STM has come to be employed in the analysis of the structure of monomolecular films formed extremely thinly on the surface of an electroconductive substance. Therefore, STM is expected to be useful as a reproduction technique in high density recording by using the difference of states of individual organic molecules to store information. One application of STM to recording and reproduction of information includes a method in which recording is conducted by changing the surface state of a recording medium by using an electron beam, ion beam, or an electromagnetic wave such as x-rays or light, the record being reproduced by STM. In another method recording and reproduction are conducted by means of STM by using a recording medium exhibiting a memory effect in its voltage current characteristics, such as a thin film of chalcogenated substance and a thin film of a π-electronic organic compound. An article by U. Stafer et al., Appl. Phys. Lett., 51 (4) 27 July 1987, describes an experiment in which cone-like projections are formed on the surface of an Rh-Zr alloy sample by local fusion due to the application of a field-emission voltage to a probe electrode of a scanning tunnel microscope. Electrostatic recording methods, in which a latent image is formed by electric discharge or electric current flow by using a needle-shaped electrode, are well known and are applied in various ways to recording on media such as recording paper (see Japanese patent application laid-open No 49-3435). The thin film employed in such electrostatic recording media has a thickness of the micrometre level. No report has been found on electrostatic reading and reproduction of the latent image on such a recording medium. European patent EP-A-0 275 881 discloses a recording medium which comprises a metal substrate, Si wafer and a film of a ferroelectric substance. A recording method is disclosed which works by polarising the film of ferroelectric substance. According to the present invention there is provided a recording method as claimed in claim 1, a method of reading information on a recording medium as claimed in claim 2, a method of erasing information recorded on a recording medium as claimed in claim 3 and claim 4, and a recording medium as claimed in claim 5. The present invention also relates to the use of an electroconductive oxide film disposed between a substrate and an insulating oxide film for storing information which may subsequently be retrieved. The present invention provides a recording medium which has a large recording capacity and which is suitable for recording information at high density, and which also allows re-writing. The recording medium may be resistant to magnetic fields and changes in environmental temperature, and may also provide stable storage of information. The recording medium allows direct electrical readout of information. For a better understanding of the invention examples of it will now be described with reference to the drawings, in which: Fig. 1, Fig. 2, and Fig. 3 illustrate roughly the constitution of the present invention (cross-sectional views). Fig. 4 illustrates roughly the constitution of the recording method and record-readout method of the present invention. Fig. 5 is a characteristic V (voltage)-I (electric current) relation for explaining the recording characteristics (electric characteristics) of the recording medium of the present invention. The present invention is characterized primarily by a novel recording medium having a constitution comprising an electroconductive oxide film as a recording layer, and an insulating oxide film which covers the active surface (the recording surface) of the electroconductive oxide film. Viewed in the utilization of oxygen ion as the medium, an oxidation-reduction reaction is analogous in principle to one of the features of the present recording medium. A typical phenomenon based on reversible change of state in an oxidation-reduction reaction is electrochromism. The electrochromism is a phenomenon of coloration of one or both of electron-transferring substances by an electrochemical oxidation-reduction reaction, and is being applied to displaying elements. The materials for utilizing the phenomenon are known to be formed by a compound of nickel or tungsten. The coloration is understood to be caused by the change of the valence number of the metal ion, leading to change of electronic state, thereby appearing or shifting an absorption peak in the visible region. Being different in principle from the above electrochromism, the present invention is not based on an oxidation-reduction reaction in the recording medium having the above constitution, but is based on the migration of oxygen ions in a solid (namely, in the electroconductive oxide film) to record information. More specifically, electroconductive oxide materials are known to transform electrically among metal, semiconductor, and insulating material in accordance with the state of oxygen deficiency in the crystal lattice. Further, the surface of an electroconductive oxide material is extremely active, and therein the oxygen ions moves very actively. The present invention utilizes this active layer by coating it with an insulating oxide material to prevent diffusion of the oxygen to outside (out of the recording medium) and to facilitate the migration of the oxygen ion within the recording medium. Consequently, a memorizing ability is found to be brought about based on a completely novel principle, in which application of a certain threshold voltage exhibits an electric memory effect of giving two states of high resistance and low resistance before and after the voltage application. This is considered to be caused by formation of a temporary state of oxygen deficiency in the interior of the active layer at the surface of the electroconductive oxide layer as the result of oxygen ion migration, bringing reversible electrical states of high resistance and low resistance. The present invention employs a recording medium based on the novel principle, using at least one probe electrode for the one polarity, bringing the probe electrode extremely close (about 1 nm) to the medium and applying voltage by use of STM to limit the region of the oxygen ion migration, causing oxygen ion migration in a very limited region, and thereby forming reversible states of high resistance and low resistance and achieving high-density recording. Further, for discrimination of the regions having different quantity of oxygen ions, STM can be used which is extremely sensitive to resistance change to enable high-density readout and reproduction, and still further direct electrical detection of recorded information, which is another characteristic of the present invention. Specifically, the detection is made by change of the tunnel current flowing between the probe electrode and the counter electrode, while the detection may also be made by the control signal given on controlling the distance between the probe electrode and the recording medium so as to maintain the tunnel current constant. The response speed is a weak point of the conventional electrochromism, and the speed is determined by the speed of the diffusion of the oxygen atoms or molecules by the oxidation-reduction reaction. On the contrary, the present invention is based on the migration of oxygen ions which is irrelevant to the above diffusion, so that the response speed is extremely high in the present invention. The present invention is described in more detail by referring to preferable embodiment thereof. Firstly, the recording medium of the present invention is described in detail. Fig. 1 shows a rough illustration of the constitution of a recording medium of the present invention. On a substrate 1, a layer 2 as an electroconductive oxide film is laminated. Further an insulating oxide film 3 is laminated on the electroconductive oxide layer 2, Thus the recording medium of the present invention has basically a constitution such that an electroconductive oxide film 2 is sandwiched between a substrate 1 and an insulating oxide film 3. In the present invention, the substrate which supports the thin films of the electroconductive oxide material and the insulating oxide material may be any of metals, glass, ceramics, plastics, and the like. The substrate is preferably in a shape of a plate, but is not limited thereto and may be in any shape. The film can be formed in conformity with a surface shape of any substrate if the film-forming method is appropriate. In the present invention, the aforementioned electroconductive oxide material serves as the recording layer, which is based on the characteristic that the electroconductive oxide material changes its electroconductivity depending on the electron deficiency thereof. Accordingly, it is preferable to use a selected material which changes the above electroconductivity in greater degree in view of the effect of the present invention. In this respect, the preferable materials include oxide materials such as ITO, IrO₂, WO₃, CaWO₄, InO₂, and MnO₂, and oxide materials of Y-Ba-Cu-O type, Bi-Sr-Ca-Cu-O type, Tl-Ba-Ca-Cu-O type, and the like. Among the above-mentioned materials, from the standpoint of the possibility of larger contrast between recorded portions and non-recorded portions and the stability of the contrast state, particularly preferred are Y₁Ba x Cu y O z in the composition range of x of 2-4, and y of 3-8 from among the Y-Ba-Cu-O type; Bi₂Sr₂Ca x Cu y O z in the composition range of x of 0-2 and y of 1-3 from among the Bi-Sr-Ca-Cu-O type; Tl₁Ba₂Ca x Cu y O z in the composition range of x of 0-5 and y of 1-6, and Tl₂Ba₂Ca x Cu y O z in the composition range of x of 0-5 and y of 1-6 from among the Tl-Ba-Ca-Cu-O type. The specific examples of particularly preferred material in the above materials include YBa₂Cu₃O y , YBa₂Cu₄O y , Y₂Ba₄Cu₇O y , and YBa₃Cu₆O y in the Y-Ba-Cu-O type; Bi₂Sr₂Cu₁O y , Bi₂Sr₂CaCu₂O y , and Bi₂Sr₂Ca₂Cu₃O y in the Bi-Sr-Ca-Cu-O type; and TlBa₂Ca n Cu n +₁O y (n = 0-5), and Tl₂Ba₂Ca n Cu n+1 O y (n = 0-5) in the Tl-Ba-Ca-Cu-O type. Some of the above materials are known as high-temperature superconductive substances. However the material for the recording layer in the present invention need not to have superconductivity at all. The electroconductive oxide film in the present invention has preferably a thickness within the range of from 0.1 µm (1000 Å) to 1 µm, particularly preferably from 0.1 µm (1000 Å) to 0.3 µm (3000 Å). The electroconductive oxide film in the present invention needs to be covered at its active surface (namely, a recording face) with an insulating oxide film. This is because the recording process in the present invention is based on migration of oxygen ions within the recording medium which requires prevention of migration (or diffusion) of oxygen ions to the outside of the recording medium. In this respect, the use of the insulating oxide film is effective for the material for the coating layer formed on the electroconductive oxide film. The insulating oxide film functions as an oxygen-interception film. The particularly preferred material has electro-conductivity of not higher than 10⁻⁴ (Ω·cm)⁻¹, more preferably not higher than 10⁻¹¹ (Ω·cm)⁻¹. The examples of the particularly preferred insulating oxide materials include many materials such as SiO₂, TiO₂, MgO, SrTiO₃, BaO, Y₂O₃, BaTiO₃, ZnO, and the like. In order to achieve further greater effect in the above-mentioned function, an insulating material is used which has an electroconductivity of lower by one or more decimals than that of the employed electroconductive material, or in other ward, being lower by one or more orders of magnitude over that. That is, the insulating material has an electroconductivity lower than that of the employed electroconductive material by at least 10 (Ω·cm)⁻¹. By the same reason, namely by the reason that the insulting oxide material is required to serve for prevention of diffusion of the oxygen ions and for pinning of the migrated oxygen ions, the insulating oxide film is preferably to be thin, or to be 0.1 µm (1000 Å) or less, particularly preferably from 5 nm to 20 nm (50 to 200 Å) in thickness to achieve the above effect. The recording medium of the present invention may be of the constitution as illustrated by Fig. 2. In other words, recording medium having indented surface (recording face) are also included in the present invention. In the constitution as shown in Figs. 2 and 3 also, an electroconductive oxide film 12 is held between a substrate 11 and an insulating oxide film 13. Such indentation, like this embodiment, makes it easy to position a probe electrode as desired in writing, partial writing, readout, partial readout, erasing, partial erasing, and so forth. Such indentation has a spacing of the projected portions (shown by a symbol "W" in Fig. 3) preferably in the range of from 1 µm to 0.4 µm (4000 Å), and a height of the projection (shown by a symbol "T" in Fig. 3) is preferably in the range of from 3 µm to 0.2 µm (2000 Å). Such indentation is not necessarily be formed on the entire recording face like the present embodiment, but may be formed locally as desired. Incidentally, in particularly preferred embodiment of the present invention, the recording medium has desirably a surface smoothness of the insulating oxide film in the range of from 0.5 nm to 2 nm (5 to 20 Å), preferably from 2 nm to 5 nm (20 to 50 Å), where the term "smoothness" denotes a parameter for representing surface smoothness, meaning the difference of the maximum and the minimum of the projections or the recesses on the surface. The methods of recording, readout (reproduction of record), and erasing of record of the present invention are described below in detail. In the recording method of the present invention, the application of the voltage to the recording medium is conducted, for example, by applying a desired intensity of voltage, by use of a probe electrode held in proximity to the recording medium, between the probe electrode and the recording medium. In the recording method of the present invention, not only two-valued recording and multivalued recording but also analog recording is feasible. The multivalued recording and the analog recording can be conducted by controlling intensity of the applied voltage or varying the number of application of a voltage which may be constant in accordance with the information signal on application of the voltage to the recording medium. The voltage to be applied to the medium on recording depends also on the kinds and the combination of the aforementioned electroconductive oxide material and the insulating oxide material constituting the recording medium, and therefore is to be selected suitably corresponding to the materials. According to the knowledge of the inventor of the present invention, in the recording medium having the constitution like that of the present invention, the voltage is preferably not less than 2 volts, more preferably in the range of from 4 to 6 volts, in order to make sufficient the difference (or contrast) of oxygen ion quantity or the difference (or contrast) of electric resistance between recorded portions and non-recorded portions, to make recording in high density, high capacity, and high sharpness, and to attain satisfactory storability of the recorded matter. Still more preferably, the voltage is in the range of 5.0 to 5.5 volts. The method of readout of the information recorded on a recording medium according to the method mentioned above is described below. The readout is conducted by application of a voltage with a probe electrode held in proximity to the recording medium similarly as in the recording. The readout may be conducted by scanning with keeping the distance between the probe electrode and the recording medium and detecting the current flowing at each portion (each of recorded portions and non-recorded portions). Otherwise, the readout may be conducted by scanning with varying the distance between the probe electrode and the recording face so as to keep the current constant, and detecting the variation of the distance. Either of the above methods is acceptable. The voltage to be applied to the medium for readout is preferably in the range of from 1 to 3 volts, since the difference of resistance between recorded portions and non-recorded portions is particularly great in this range of applied voltage. Still more preferably the voltage is in the range of 2.0 to 2.5 volts. The applied voltage on readout is preferably lower than that on recording for the same recording medium in the present invention. In the readout method of the present invention, as mentioned above, the electroconductive materials employed in the recording medium exhibit a continuous change in physical or electric quantities in correspondence with the oxygen deficiency, which enables the readout of the multivalued or analog information recorded on a recording medium by detecting the continuous change. The information recorded by the method of the present invention can be erased by heating the entire face of the oxide layer. However, the major feature in erasing of the present invention is the feasibility of erasing the information in a similar manner as in recording and readout, particularly by applying a reversed bias voltage relative to the voltage applied on the recording thereof. Thus partial erasing or partial rewriting, which cannot be conducted by entire heating, can be conducted with the same apparatus. The probe electrode to be used for the aforementioned recording, readout, and erasing needs to have a tip as sharp as possible in order to obtain higher resolution. In Examples shown later in this invention, the probe electrode used was made of a platinum wire of 1 mm diameter, the tip of which was ground mechanically into 90° cone shape and was subjected to electric field application in ultra-high vacuum to evaporate surface atoms. However, the shape or the treatment method of the probe electrode is not limited thereto. The distance between the probe electrode and the recording medium is preferably in the range of from 0.2 nm to 10 nm (2 Å to 100 Å), particularly preferably from 0.2 nm to 2 nm (2 Å to 20 Å) for detecting the tunnel current precisely, but not particularly limited thereto. Fig. 4 is a block diagram illustrating an example of the apparatus used for recording, reproducing, and erasing of the present invention. In Fig. 4, the numeral 105 denotes a probe current amplifier. The numeral 106 denotes a servo circuit for controlling a fine control mechanism 107 employing a piezsoelectric element to keep the probe current constant. The power source 108 applies pulse voltage between a probe electrode 102 and a substrate electrode 103 for recording and erasing. Since the probe current changes abruptly on application of the pulse voltage, the servo circuit 106 control a hold circuit to be turned on during that time. An X-Y scanning drive circuit 109 moves and controls the probe electrode 102 in X-Y directions. Devices 110 and 111 serves for coarse control of the distance between the probe electrode 102 and the recording medium 1 so as to obtain a probe current of about 10⁻⁹ A in advance, and for larger displacement of the probe electrode 102 relative to the substrate 104 in X-Y directions (outside the control range of fine control mechanism). All of these devices are under central control by a microcomputer 112. The numeral 113 denotes a display device. Examples of a mechanical performances in movement control by use of a piezoelectric element are shown below. Fine control range in Z direction: 0.1 nm to 1 µm Coarse control range in Z direction: 10 nm to 10 mm Scanning range in X,Y directions: 0.1 nm to 1 µm Coarse control range in X,Y directions: 0.1 nm to 1 nm Allowable error for measurement and control: < 0.1 nm (in fine control) Allowable error in measurement and control < 1 nm (in coarse control) The present invention will be described below more specifically. Example 1 A recording-reproducing apparatus shown in Fig. 4 was employed. A probe electrode made of platinum was employed as probe electrode 102. The probe electrode 102 is controlled finely by an piezoelectric element to keep the distance (Z) from insulating oxide film 101 so as to maintain the electric current constant. Further, fine controlling mechanism 107 is designed to be capable of controlling finely the movement in X-Y directions in the plane with the distance Z kept constant. All of those are known prior art. The probe electrode 102 may also be used for direct recording, reproduction, and erasing. The recording medium, which is placed on XY stage 114 of high precision, may be moved to any desired position. An experiment is described in detail in which the recording medium employed is constituted of a counter electrode formed from YBa₂Cu₃O 7-δ as the electroconductive oxide material, and the insulating oxide film formed from SiO₂ for pinning oxygen ions. Electroconductive YBa₂Cu₃O 7-δ film 103 was formed on an MgO single crystal substrate plate 104 by sputtering. Further on the surface thereof, SiO₂ insulating oxide film 101 was formed by sputtering, thus preparing a recording medium. This recording medium 1 was fixed on an XY stage 114. With the output of XY scanning drive circuit 109 being held, the probe electrode 102 was fixed at a certain position. Then variable voltage was applied thereto in rectangle pulse from pulse power source 108 to measure the V-I characteristics, thereby a V-I curve as shown in Fig. 5 being obtained. From this result, it was found that application of about 4 volts or lower gives memory of a high resistance state, and application of voltage of about 4 volts or higher gives memory of a low resistance state. Thus two-valued recording of a high resistance state and a low resistance state could be made by application of a voltage higher than a threshold voltage. An experiment of recording, reproduction and erasing is describe in detail below by using this recording medium 1. The recording medium 1 is placed on the XY stage 114. A voltage of 1.0 volt was applied between the electroconductive oxide film 103 and the probe electrode 102. The distance Z between the probe electrode 102 and the surface of the insulating oxide film 101 was adjusted by monitoring the electric current. Thereafter the fine control mechanism 107 was controlled to keep the probe current Ip to be at 10⁻⁹ A. The probe current Ip for controlling the distance between the probe electrode 102 and the surface of the insulating oxide film 101 should be adjusted to be within the range of 10⁻⁷A ≧ Ip ≧ 10⁻¹²A, preferably 10⁻⁸A ≧ Ip ≧ 10⁻¹⁰A. While the XY stage 114 was moved stepwise at a constant interval of 1 µm, a rectangular pulse voltage of higher than the threshold voltage of 4 volts (20 Vmax, 0.1 µs) to produce a low resistance state. Thereafter, the change of current intensity at the low resistance state region and the high resistance state region can be read out directly by applying a probe voltage of 1.0 volt between the probe electrode 102 and the electroconductive oxide film 103, or otherwise can be read through the servo circuit 106. In this example, the probe current flowing at the high resistance state was confirmed to be about 10 times as large as that before recording (or the low resistance state). Further, the recording apparatus was again made to trace while a rectangular voltage of the negative threshold voltage of -4 volts or more was applied to the probe electrode. Consequently, all the recorded state was confirmed to have been erased and changed to a high resistance state. Example 2 The constitution of the recording medium employed in Example 1 was changed to comprise an electroconductive oxide of ITO prepared by vacuum vapor deposition, and an insulating oxide of TiO₂. The threshold voltage thereof was about 2 volts. An experiment was conducted in the same manner as in Example 1, and found that recording and readout are feasible with a sufficient S/N ratio. Example 3 The constitution of the recording medium employed in Example 1 was changed to comprise an electroconductive oxide of Bi₂Sr₂Ca₁Cu₂O x prepared by sputtering, and an insulating oxide of MgO prepared thereon by sputtering. An experiment was conducted in the same manner as in Example 1, and found that recording and readout are feasible with a threshold voltage of about 4.5 volts. Example 4 The constitution of the recording medium employed in Example 1 was changed to comprise an electroconductive oxide of YBa₂Cu₃O 7-δ prepared by sputtering, and an insulating oxide of SiO₂ prepared thereon by sputtering, and to have pits prepared by conventional lithography as shown in Fig. 3 (pit spacing of 0.5 µm). This article used as a recording medium had a threshold value of about 4 volts. An experiment was conducted in the same manner as in Example 1, and found that recording and readout are feasible with an S/N ratio larger than that in Example 1. Example 5 The constitution of the recording medium employed in Example 1 was changed to comprise an electroconductive oxide of YBa₃Cu₆O y prepared by sputtering, and an insulating oxide of SrTiO₃ prepared thereon by sputtering. An experiment was conducted in the same manner as in Example 1, and found that recording and readout are feasible with a threshold voltage of about 5.0 volts. In the Examples described above, the material used for the recording medium is any electroconductive oxide material which changes its electrical state according to oxygen deficiency; and the insulating oxide material need not be completely insulative but should have electroconductivity of one or more decimals lower than that of the electroconductive oxide material, or in other words, being lower by one or more orders of magnitude over that. Any of such oxide materials may be applied to the present invention. The recording medium described in the Examples has advantages as below: (1) Much higher density of recording is feasible with a large capacity in comparison with magnetic recording and optical recording. (2) The employed recording system utilizing the oxygen ion movement gives recording mediums superior in resistance to a magnetic field, a temperature change, and other environmental changes, and satisfactory storability of recorded matter, and further gives superior controllability of the medium in two-valued recording and multivalued recording by voltage application with high reproducibility. (3) The achievable small thickness of the recording layer gives inexpensive recording mediums with high productivity. (4) The energy for reproduction is small, and the consumption of electric power is small. (5) All of the operation of recording, readout (or reproduction), and rewriting (or erasing) are feasible directly with electric signals arbitrarily within the same apparatus.

Claims: A recording method comprising the steps of positioning a probe electrode (102) in proximity to a recording layer disposed on a substrate (1), and applying a voltage between said probe electrode (102) and said recording layer, characterised in that said recording layer comprises an electroconductive oxide film (2) disposed on said substrate (1) and an insulating oxide film (3) containing an oxygen-intercepting substance disposed on said electroconductive oxide film (2) at a side opposite to said substrate (1), said electroconductive oxide film (2) containing oxygen ions which are caused to migrate or diffuse within said electroconductive film (2) by the application of said voltage to form a portion of said electroconductive oxide film (2) which is different from another portion in either electrical resistance or oxygen content, and said insulating oxide film (3) serving to prevent migration or diffusion of said oxygen ions from said electroconductive oxide film (2). A method of reading information on a recording medium, the method comprising the steps of positioning a probe electrode (102) in proximity to a recording layer disposed on a substrate (1), and supplying a voltage between said probe electrode (102) and said recording layer and detecting the resultant current flow, characterised in that said recording layer comprises an electroconductive oxide film (2) disposed on said substrate (1) and an insulating oxide film (3) containing an oxygen-intercepting substance disposed on said electroconductive oxide film (2) at a side opposite to said substrate (1), said electroconductive oxide film (2) containing ions which have been caused to migrate or diffuse within said electroconductive film (2) so as to form portions of said electroconductive oxide film (2) which are different from other portions in either electrical resistance or oxygen content thereby forming said information, and said insulating oxide film (3) serving to prevent migration or diffusion of oxygen from said electroconductive oxide film (2). A method of erasing information from a recording medium comprising: a substrate (1); an electroconductive oxide film (2) disposed on said substrate (1) and containing oxygen ions which have been caused to migrate or diffuse within said electroconductive oxide film (2) to form portions of said electroconductive oxide film (2) which are different from other portions in either electrical resistance or oxygen content thereby representing said information; and an insulating oxide film (3) containing an oxygen-intercepting substance disposed on said electroconductive oxide film (2) at a side opposite to said substrate (1) and serving to prevent migration or diffusion of oxygen from said electroconductive oxide film (2); the method comprising heating said recording medium. A method of erasing information recorded on a recording medium by the method of claim 1, comprising applying a reverse voltage between said probe electrode (102) and said recording layer opposite to said voltage used in recording and thereby removing the difference in electrical resistance or oxygen content between said portion of said electroconductive oxide film (2) and said another portion. A recording medium comprising a recording layer disposed on a substrate (1), characterised in that said recording layer comprises an electroconductive oxide film (2) in which the oxygen ions migrate or diffuse when a voltage is applied thereto, and in that said recording medium further includes an insulating oxide film (3) disposed on the electroconductive oxide film at a side opposite to said substrate to prevent migration or diffusion of oxygen from said electroconductive oxide film, the insulating oxide film comprising an oxygen-intercepting substance and having a thickness of 0.1µm or less. The recording medium or method of any preceding claim, wherein the insulating oxide film (3) comprises a substance having electroconductivity of not higher than 10⁻⁴Ω⁻¹ cm⁻¹. The recording medium or method of any preceding claim, wherein the insulating oxide film (3) comprises a substance having an electroconductivity being lower by one or more orders of magnitude over the electroconductive oxide film (2). The method of claims 1 to 4, wherein the insulating oxide film (3) has a thickness of not more than 0.1µm (1000Å). The recording medium or method of any preceding claim, wherein the insulating oxide film (3) has a uniformly smooth surface. The recording medium or method of any preceding claim, wherein the electroconductive oxide film (2) comprises a substance having an electroconductivity varying in correspondence with oxygen deficiency. The recording medium or method of any preceding claim wherein the electroconductive oxide film (2) has a thickness within the range of 0.1µm (1000Å) to 1µm (10000Å). The recording medium or method of any preceding claim, wherein the insulating oxide film (3) comprises a material selected from the group consisting of SiO₂, TiO₂, MgO, SrTiO₃, BaO, Y₂O₃, BaTiO₃, and ZnO. The recording medium or method of any preceding claim wherein the electroconductive oxide film (2) comprises a material selected from the group consisting of ITO, IrO₂, WO₃, CaWO₄, InO₂, and MnO₂. The recording medium or methods of any preceding claim, wherein the electroconductive oxide film (2) comprises a material represented by a general formula selected from the group consisting of [1] to [IV]. [I] Y₁Ba x1 Cu y1 O z1 where 2≦x1≦4, 3≦y1≦8, and z1>0 [II] Bi₂Sr₂Ca x2 Cu y2 O z2 where 0≦x2≦2, 1≦y2≦3, and z2>0 [III] Tl₁Ba₂Ca x3 Cu y3 O z3 where 0≦x3≦5, 1≦y3≦6, and z3>0 [IV] Tl₂Ba₂Ca x4 Cu y4 O z4 where 0≦x4≦5, 1≦y4≦6, and z4>0 The recording method of claim 1, wherein the voltage applied to the recording medium is digital voltage in correspondence with information signals. The recording method of claim 1, wherein the voltage applied to the recording medium is analog voltage in correspondence with information signals. The recording method of claim 1, wherein the voltage applied to the recording medium is not less than 2 volts. The reading method of claim 2, wherein the voltage applied to the electroconductive oxide film (2) is in the range of from 1 to 3 volts. The recording medium or method of any preceding claim, wherein the difference in height between the highest and lowest parts of said insulating oxide film (3) is in the range from 0.5nm to 5nm. The recording method of claim 17, wherein the voltage applied to the recording medium is in the range of 5.0 to 5.5 volts. The recording medium or method of any preceding claim, wherein the electroconductive oxide film (2) and insulating oxide layer (3) are formed only in predetermined regions (12,13) on said substrate (11). The recording medium or method of claim 21, wherein said regions (12,13) are spaced apart by between 1µm to 0.4µm. The method of claims 1 to 2 or 4 to 22, wherein said probe electrode (102) comprises platinum wire. The method of claims 1 to 2 or 4 to 23, wherein said probe electrode (102) has a diameter of 1mm. The method of claims 1 to 2 or 4 to 24, wherein the distance between said probe electrode (102) and said insulating oxide film is 0.2nm to 10nm. The recording medium or method of any preceding claim, wherein said electroconductive oxide layer has a plurality of portions different in electrical resistance or oxygen content. Use of an electroconductive oxide film (2) disposed between a substrate (1) and an insulating oxide film (3) for storing information which may subsequently be retrieved.

Inventors: KANEKO NORIO C O CANON KABUSHI, KAWASAKI TAKEHIKO C O CANON KA, KISHI FUMIO C O CANON KABUSHIK, MOTOI TAIKO C O CANON KABUSHIK, YAMAMOTO KEISUKE C O CANON KAB, KANEKO, NORIO, C/O CANON KABUSHIKI KAISHA, KAWASAKI, TAKEHIKO, C/O CANON KABUSHIKI KAISHA, KISHI, FUMIO, C/O CANON KABUSHIKI KAISHA, MOTOI, TAIKO, C/O CANON KABUSHIKI KAISHA, YAMAMOTO, KEISUKE, C/O CANON KABUSHIKI KAISHA
Applicants: CANON KK, CANON KABUSHIKI KAISHA
Application year: 1990
Main classification: H01L45
IPC codes: H01L45, G11B9, G01Q60, G01Q90, G01Q80