High voltage semiconductor device having a sense electrode and a method of manufacturing the same

Abstract: On a p⁻ substrate (31), an n⁻ epitaxial layer (32) is surrounded and isolated by a p well (33). At the surface of the n⁻ epitaxial layer (32), a p floating region (35) is provided in the vicinity of the p well (33) on which a sense electrode (SEN) is provided. An insulation film (36) and a conductive film (37) are formed on the n⁻ epitaxial layer (32) between the p well (33) and the p floating region (35) to overlap them. The conductive film (37) and the p floating region (35) serve as a composite field plate, which makes it difficult for the surface electric field distribution to be influenced by the state of electric charge at the surface and relieves the surface electric field by expanding the depletion layer, which extends from the pn junction between the n⁻ epitaxial layer (32) and the p well (33) into the n⁻ epitaxial layer (32) in current blocking state, toward the centre of the n⁻ epitaxial layer (32). The potential of the p floating region (35) is determined by capacity coupling in the current blocking state and thus the sense voltage characteristic monitored through the sense electrode (SEN) is smooth.

Description: The present invention relates to a semiconductor device and a method of manufacturing same. More particularly, it relates to a semiconductor device which has islands of high voltage and low voltage formed on a single chip and is suitable for enhancing breakdown voltage of the island of high voltage and for extracting a signal to monitor the potential of the island of high voltage at the island of low voltage, and to a method of manufacturing the same. Fig. 1 is a circuit diagram showing a single phase of a conventional half bridge circuit for driving a load such as a motor. In this figure, insulating gate bipolar transistors (referred to as "IGBT" hereinafter) 1 and 2 are connected in a totem pole manner between a high voltage power source +v and the ground. Flywheel diodes 3 and 4 are connected in parallel to the IGBTs 1 and 2 respectively. A control circuit is formed on a semiconductor chip 5 to control turning ON/OFF the IGBTs 1 and 2. This control circuit consists of a control logic 6, drive circuits 7 and 8 for producing drive gate signals of the IGBTs 1 and 2 in response to a signal from the control logic 6, and a high breakdown voltage switching element 9 for shifting the level of the signal from the control logic 6 to apply it to the drive circuit 7 on the side of high voltage. The high breakdown voltage switching element 9 is switched in a predetermined manner in response to the signal from the control logic 6 and thereby applies a command from the control logic 6 to the drive circuit 7 on the side of high voltage. The semiconductor chip 5 includes a low voltage region including the control logic 6 and the drive circuit 8, and a high voltage region including the drive circuit 7 and the high breakdown voltage switching element 9. Conventionally, when the high and low voltage regions are formed on a single chip by means of isolation diffusion, utilizing diffusion from the surface up to the substrate, regions (islands) 9a and 9b to be isolated are enclosed by a diffusion region 10 of opposite conductivity type, as shown in Fig. 2. For example, the island 9a may be an island of high voltage, and the island 9b may be an island of low voltage. As it is impractical to perform the diffusion deeply, the thickness of an epitaxial layer 11 is restricted and the high breakdown voltage element 9 must be formed on a thin island 9a. United States Patent No. 4292642 discloses such a technique. Fig. 3 is a sectional view showing a high breakdown voltage diode as disclosed in this patent in which a thin epitaxial layer is employed. A thin n⁻ epitaxial layer 13 is formed on a p⁻ substrate 12, and a p⁺ diffusion region 14 extending from the surface of the n⁻ epitaxial layer 13 up to the p⁻ substrate 12 is provided. On the surface of the n⁻ epitaxial layer 13, an n⁺ diffusion region 15 is provided. An axis R is the centre of the rotation, and thus the diode is so structured that the p⁺ diffusion region 14 surrounds the n⁻ epitaxial layer 13 and the n⁺ diffusion region 15 to isolate them. A broken line in the figure shows the extension of a depletion layer from the pn junction when a high voltage +V is applied between the p⁺ diffusion region 14 and the n⁺ diffusion region 15. A graph in the upper portion of the figure shows the intensity of the electric field at the surface, while a graph at the right side shows the intensity of the electric field through the diode. The junction between the substrate 12 and the epitaxial layer 13 is named a first pn junction J₁, and the junction between the diffusion region 14 and the epitaxial layer 13 is named the second pn junction J₂. Since the first pn junction J₁ is a junction between p⁻ and n⁻ regions, a depletion layer extends from the junction to both sides, whereas since the second pn junction J₂ is a junction between p⁺ and n⁻ regions, a depletion layer extends from the junction merely to one side (to the n⁻ region). In a one-dimensional system, that is assuming that the first and second pn junctions J₁ and J₂ are infinite plane junctions, the second pn junction J₂ yields at only half of the breakdown voltage of the first pn junction J₁. Thus, the breakdown voltage of the diode is determined based upon that of the second pn junction J₂. However, when the thickness d of the epitaxial layer 13 is small, the extension of the depletion layer from the first pn junction J₁ changes a form of the depletion layer extending from the second pn junction J 2, and as a result, the depletion layer extends more in the lateral direction (the right direction in the figure) in the surface of the epitaxial layer 13. Consequently, the surface electric field is relieved. Satisfying the following formula, 2.6 x 10² ε E V B /L ≦ Nd ≦ 5.1 x 10⁵ ε E the surface electric field is relieved to the same level as the first pn junction J₁ or below, and the breakdown voltage of the diode rises to approximate to the one-dimensional breakdown voltage of the first pn junction J₁. Herein, N denotes an impurity concentration of the n⁻ epitaxial layer 13, ε denotes the dielectric constant of the semiconductor material, E is a critical electric field, V B denotes a breakdown voltage and L denotes a distance between the p⁺ diffusion region 14 and the n⁺ diffusion region 15. The switching element 9 shown in Fig. 1 must have a high breakdown voltage. The control logic 6 of the island of low voltage must monitor the potential of the island of high voltage to protect its operation, as shown by a broken line in the figure. If the high potential of the island of high voltage is input as it is to an element of low breakdown voltage in the island of low voltage, the element might be broken, and hence sensing must be done in some indirect way. This technique is disclosed in "Proceedings of the 1985 International Electron Device Meeting, pp. 37 - 41, 500V BIMOS TECHNOLOGY AND ITS APPLICATIONS, Eric J. Wildi et alii". Fig. 4 is a sectional view showing a high breakdown voltage npn transistor having a sense terminal which is disclosed in this thesis. The npn transistor has a structure basically the same as that shown in Fig. 3, and additionally has an n⁺ buried region 16 formed in the interface between the p⁻ substrate 12 and the n⁻ epitaxial layer 13, an n⁺ diffusion region 17 extending from the surface of the n⁻ epitaxial layer 13 up to the n⁺ buried region 16, a p diffusion region 18 formed in the surface of the n⁻ epitaxial layer 13, and an n⁺ diffusion region 19 formed in the surface of the p diffusion region 18. Symbols C, E, B and SEN denote a collector, an emitter, a base and a sense terminal respectively. When the voltage applied to the collector terminal C rises, depletion layers in an area X j extend from the upper and lower side, and hence it works as a JFET. When the area X j is completely filled with the depletion layer, the potential of the n⁺ buried layer 16 and the n⁺ diffusion region 17 on the left of the area X j is separated from the potential of a region on the right of the area X j . Then, the rising potential of the collector terminal C is absorbed because of the depletion of the region on the right of the area X j . An equivalent circuit to the device shown in Fig. 4 is shown in Fig. 5. That is, a cathode connection between an npn transistor 20 and a JFET 21 makes a high breakdown voltage npn transistor with a sense terminal. Since the voltage at the sense terminal SEN is expressed by a curve, as shown in Fig. 6, it is possible to keep the sense voltage low by optimizing the design of the JFET 21. Monitoring the sense voltage allows the potential of the region of high voltage (the region on the right of the area X j ) to be sensed indirectly. The sense voltage characteristic can be regulated by altering the length of the area X j . The region on the right of the area X j , which is a high voltage keeping region, must be optimized by the technique of the high breakdown voltage diode shown in Fig. 3. With the structure shown in Fig. 3, it is necessary to satisfy the condition of formula (1) so as to optimize the breakdown voltage, especially the requirement of the right half of the formula (1) Nd ≦ 5.1 x 10⁵ ε E which requires that the extension of the depletion layer from the first pn junction J₁ is sufficient to reach the surface just before breakdown. Under the optimized condition, the surface electric field has two peaks with almost the same intensity. Such a surface electric field distribution is unstable, depending upon the state of the electric charge on the surface, and a problem arises about the reliability of the diode at the breakdown voltage. In addition, due to the restriction of the formula (2), the impurity concentration N and the thickness d of the n⁻ epitaxial layer 13 can not be made so large, and thus freedom of design is insufficient. As a result, problems arise when on-state resistance is increased because the impurity concentration of the n⁻ epitaxial layer 13 cannot be made higher and when the breakdown voltage is reduced and the leakage current is increased in other islands of low voltage because the thickness d of the n⁻ epitaxial layer cannot be made larger. On the other hand, with the structure shown in Fig. 4, the sense voltage characteristic is controlled by the length of the area X j . The length of the area X j corresponds to the channel length of the JFET, and an element belonging to the class of devices with a breakdown voltage of 500 V requires a length of 20 m at the lowest. There is also the problem that a large area is required for the structure for sensing, allowing for the existence of the p⁺ diffusion region 14 and the n⁺ diffusion region 17. Since the p diffusion region 18 is a base region of a transistor, its size can not be changed as desired. Accordingly, it is necessary to provide the n⁺ buried region 16 to regulate the length of the area X j . It is difficult to form the n⁺ buried region 16 and the p diffusion region 18 with their relative positions accurately defined and, as a result, there arises the problem that the length of the area X j and accordingly the sense voltage characteristic, varies widely. Further, since the sense voltage characteristic is one in which the sense voltage rises rapidly until the channel of the JFET is closed and thereafter hardly rises, as shown in Fig. 6, there is the problem that the voltage change under the condition that the channel of the JFET is closed can not be sensed easily. According to a first aspect of the present invention there is provided a semiconductor device, comprising a first conductivity type semiconductor substrate; a second conductivity type first semiconductor region formed on said semiconductor substrate in an island manner; a first conductivity type second semiconductor region formed on said semiconductor substrate to surround said first semiconductor region; a first conductivity type third semiconductor region formed at a surface of the first semiconductor region in the vicinity of said second semiconductor region; and a voltage applying region formed at the surface of the first semiconductor region near its centre; and characterised in that a first insulating film is formed on the surface of the first semiconductor region between the second and the third semiconductor regions to overlap the surface of the second and the third semiconductor regions; a first conductive film is formed on said first insulating film; and in that a sense electrode is formed on said third semiconductor region for use in detecting a voltage applied to said voltage applying region in a current blocking state. According to a second aspect of the present invention there is provided a method of manufacturing a semiconductor device comprising the steps of: preparing a first conductivity type semiconductor substrate; forming a second conductivity type semiconductor layer on said semiconductor substrate; and selectively introducing a first conductivity type impurity into said semiconductor layer to provide a second conductivity type first semiconductor region formed on said semiconductor substrate in an island manner and a first conductivity type second semiconductor region formed on said semiconductor substrate to surround said first semiconductor region; and characterised in that an insulating film and a conductive film are formed in this order on an end portion of said first semiconductor region adjacent to said second semiconductor region; a first conductivity type third semiconductor region is formed at the surface of the first semiconductor region in the vicinity of the second semiconductor region by self-alignment using the conductive film as a mask; a voltage applying region is formed at the surface of the first semiconductor region near its centre; and in that a sense electrode is formed on the third semiconductor region for use in detecting a voltage applied to the voltage applying region in a current blocking state. In the present invention, the conductive film and the third semiconductor region serve as a composite field plate so as to make it difficult for the surface electric field distribution to be influenced by the state of electric charge at the surface and to relieve the surface electric field by expanding the depletion layer, which extends from the pn junction between the first and second semiconductor regions into the first semiconductor region in current blocking state, toward the voltage applying region at the surface of the first semiconductor region. In the current blocking state, the potential of the floating third semiconductor region is determined by capacity coupling, and because of this, a smooth sense voltage characteristic monitored through the sense electrode is obtained. In the manufacturing method of the present invention, since the third semiconductor region is formed by self-matching using the conductive film as a mask, the length by which both of them overlap can be precisely controlled. Since most of the capacity coupling which determines the potential of the third semiconductor region depends upon the overlapping length, the sense voltage characteristic can be accurately controlled. Accordingly, it is an object of the present invention to provide a semiconductor device having a compact sense structure which has high reliability in breakdown voltage because of the stability of the surface electric field distribution; has enhanced freedom of design because of wide ranges of the usable thickness of a layer and the usable impurity concentration of the layer; and additionally has a sense voltage characteristic which varies very little and can be easily sensed: and to provide a method of manufacturing such a semiconductor device. In the above inventive device and method, field plates of the type known from JP-A-60 246 674 and Japanese Journal of Applied Physics, No.21-1, 1982, p.97-101, are important. These and other objects, features, aspects and advantages of the present invention will become more apparent from the following detailed description of examples of the present invention with reference to the accompanying drawings, in which: Fig. 1 is a circuit diagram showing a single phase of a conventional half bridge circuit; Fig. 2 is a sectional view of a semiconductor chip showing isolating regions; Fig. 3 is a sectional view of a conventional high breakdown voltage diode; Fig. 4 is a sectional view of a conventional high breakdown voltage bipolar transistor with a sense terminal; Fig. 5 is a circuit diagram showing an equivalent circuit of the transistor in Fig. 4; Fig. 6 is a graph showing a conventional sense voltage characteristic; Figs. 7 and 10 are sectional views showing a high breakdown voltage diode with a sense terminal which is an embodiment of a semiconductor device according to the present invention; Fig. 8 is a sectional view showing a high breakdown voltage MOSFET with a sense terminal which is another embodiment of a semiconductor device according to the present invention; Figs. 9A to 9E are sectional views showing steps in the manufacture of the MOSFET of Fig. 8; Fig. 11 is a sectional view showing the extension of a depletion layer in the diode of Fig. 7; Fig. 12 is a graph showing a sense voltage characteristic of this invention; Fig. 13 and Fig. 14 are sectional views showing a simplified conventional diode; Fig. 15 is a sectional view for analysing a diode according to the present invention; Fig. 16 to Fig. 19 are graphs showing the electric field distribution in a section of the diode along the line X - X in Fig. 15; Fig. 20 is a graph showing the variation in the thickness improvement ratio of an epitaxial layer with respect to the variation in the thickness of an insulating film; and Fig. 21 to Fig. 38 are sectional views showing further embodiments of various semiconductor devices according to the present invention. Fig. 7 is a sectional view showing a high breakdown voltage diode with a sense terminal which is an embodiment of a semiconductor device according to the present invention. In Fig. 7, an n⁻ epitaxial layer 32 is formed on a p⁻ semiconductor substrate 31, and a p diffusion region 33 is formed extending from the surface of the n⁻ epitaxial layer 32 up to the p⁻ semiconductor substrate 31. The p diffusion region 33 consists of a relatively deep diffusion area 33a and a relatively shallow diffusion area 33b. An n⁺ diffusion region 34 and a p diffusion region 35 are formed on the surface of the n⁻ epitaxial layer 32. A conduction film 37 is formed on the surface of the n⁻ epitaxial layer 32 between the p diffusion regions 33 and 35 through a relatively thin insulating film 36. A conduction film 39 is formed on the end surface of the p diffusion region 35 near the n⁺ diffusion region 34 through a relatively thick insulating film 38. The conduction film 39 is not essential, and the insulating film 38 may be thin. The p diffusion region 33 and the conduction film 36 are short-circuited and also connected to an anode terminal A. The n⁺ diffusion region 34 is connected to a cathode terminal K.The p diffusion region 35 and the conduction film 39 are short-circuited and also connected to a sense terminal SEN. An axis R is the centre of the rotation as in Figs. 3 and 4. Fig.8 is a sectional view showing a high breakdown voltage MOSFET with a sense terminal which is another embodiment of the semiconductor device according to the present invention. The structure of this MOSFET is the same as that of the diode shown in Fig. 7 except that an n⁺ diffusion region 40 is formed on the surface of the shallow diffusion area 33b of the p diffusion region 33, the p diffusion region 33 and the n⁺ diffusion region 40 are short-circuited and connected to a source terminal S, the conduction film 37 serves as a gate electrode and is connected to a gate terminal G, and the n⁺ diffusion region 34 is connected to a drain terminal D. Figs. 9A to 9E are sectional views showing steps in the manufacturing process of the MOSFET shown in Fig. 8. First, as shown in Fig. 9A, the n⁻ epitaxial layer 32 is formed by means of epitaxial growth on the p⁻ semiconductor substrate 31, and thereafter p-type impurity is selectively diffused into the n⁻ epitaxial layer 32 through a surface oxidation film 100 to form the p diffusion area 33a extending from the surface of the n⁻ epitaxial layer 32 down to the p⁻ semiconductor substrate 31. Then, after the surface oxidation film 100 has been removed, an oxidation insulating film 101 and a polysilicon film are formed in this order over the entire surface of the n⁻ epitaxial layer and the p diffusion area 33a. A conduction film 37 is then formed by etching the polysilicon film by using a resist 102 as a mask, as shown in Fig. 9B. Further, a resist 103 is formed with openings 104a and 104b on opposite sides of the conduction film 37. Thereafter, a p-type impurity such as boron is selectively implanted and diffused through the openings 104a and 104b to form the p diffusion regions 33b and 35 as shown in Fig. 9C. After that, the resists 102 and 103 are removed and a thermal oxidation film 105 which grows in diffusing the p-type impurity is patterned to form openings 106a and 106b. The insulating film 101 remaining under the conduction film 37 becomes an insulating film 36. An n-type impurity such as phosphorous is selectively deposited and diffused through the openings 106a and 106b to form the n⁺ diffusion regions 34 and 40 as shown in Fig. 9D. A channel of the MOSFET is formed by means of double diffusion through the openings 104a and 106a. Further, after a passivation film 107 is deposited on the oxidation film 105, contact holes 108, 109 and 110 are made in the passivation film 107. After that, an electrode material such as Al -Si is deposited and patterned so that, as shown in Fig. 9E, a source electrode 111 in contact with the p diffusion region 33 and the n⁺ diffusion region 40 through the contact hole 108, a sense electrode 112 in contact with the p diffusion region 35 through the contact hole 109 and a drain electrode 113 in contact with the n⁺ diffusion region 34 through the contact hole 110 are formed. In this way, the MOSFET equivalent to the structure in Fig. 8 is formed. In a region Y in Fig. 9E, the passivation film 107 operates like the insulating film 38 in Fig. 8, and the sense electrode 112 operates like the conduction film 39. The steps of manufacturing the diode shown in Fig. 7 are the same as the manufacturing steps described above with reference to Figs. 9A to 9E except for the following. In the case of the diode, the n⁺ diffusion region 40 is not formed by masking the opening 106a by the oxidation film 105 in the step shown in Fig. 9C. In the step shown in Fig. 9D a contact hole is formed in the passivation film 107 on the conduction film 37 in addition to the contact holes 108 to 110. Through these manufacturing steps, a diode equivalent to the structure of Fig. 7 is formed as shown in Fig. 10 wherein 111′ and 113′ denote an anode electrode and a cathode electrode, respectively. During operation of the diode shown in Fig. 7, when the applied voltage of the anode terminal A becomes higher than the applied voltage of a cathode terminal K by the threshold voltage or more the diode turns on and current flows from the anode terminal A to the cathode terminal K. On the other hand, when the applied voltage of the anode terminal A becomes equivalent to or lower than the applied voltage of the cathode terminal K the diode turns off and current is blocked. As the potential of the cathode terminal rises with respect to the potential of the anode terminal A in the current blocked state, the end of the depletion layer which extends from a first pn junction J₁, between the p⁻ semiconductor substrate 31 and the n⁻ epitaxial layer 32, to a second pn junction J₂, between the p diffusion region 33 and the n⁻ epitaxial layer 32, and into the n⁻ epitaxial layer 32 alters in such a way as D₁ -> D₂ -> D₃ as shown in Fig. 11. Since the first pn junction J₁ is a junction between p⁻ and n⁻ regions, the depletion layer extends toward both sides from the junction, but since the second pn junction J₂ is a junction between p and n⁻ regions, the depletion layer extends toward only one side (the n⁻ side) from the junction. Thus, in the one-dimensional system, that is, assuming that the first and second pn junctions J₁ and J₂ are infinite plane junctions, the second pn junction J₂ yields only half of the breakdown voltage that the first pn junction J₁ does, and the breakdown voltage of the diode is reduced. However, in this embodiment, the surface electric field is relieved and the breakdown voltage of the diode is increased for the following two reasons. (1) In a similar way to the conventional diode shown in Fig. 3, the extension of the depletion layer from the first pn junction J₁ causes the configuration of the depletion layer extending from the second pn junction J₂ to change and, as a result, the depletion layer extends more in the lateral direction (to the right in the figure) in the surface of the n⁻ epitaxial layer 32. (2) The conductive films 37 and 39 and the p diffusion region 35 serve as a composite field plate, so that the depletion layer extends still more in the lateral direction (to the right in the figure) at the surface of the n⁻ epitaxial layer 32 due to the influence of the electric field from the composite field plate. Further, due to the composite field plate, the breakdown voltage is less influenced by the state of electric charge at the surface of the n⁻ epitaxial layer 32. In the conventional diode shown in Fig. 3, since the breakdown voltage is increased as a function of formula (1), the restriction shown in the formula (1) is imposed on the thickness and impurity concentration of the n⁻ epitaxial layer 32. On the other hand, in the diode according to the present invention, in addition to the function (1) the breakdown voltage is also increased by the formula (2), so that the restriction upon the thickness and impurity concentration of the n⁻ epitaxial layer 32 is relieved. This will be explained in detail hereinafter. As the potential of the cathode terminal K rises with respect to the potential of the anode terminal A and the end of the depletion layer alters in such a way as D₁ -> D₂ -> D₃, the potential of the floating p diffusion region 35 and therefore the potential of the sense terminal SEN also varies. Until the end of the depletion layer reaches the state of D₁, the potential of the sense terminal SEN varies in accordance with the potential of the cathode terminal K, and therefore it slowly rises in accordance with the capacity coupling caused by a parasitic capacity between the sense terminal SEN and the anode terminal A and a parasitic capacity between the sense terminal SEN and the cathode terminal K. The voltage between the anode and cathode in the state D₁ in general is only several volts or so, and thus the change in the sense voltage before the state of D₁ occupies simply the initial small part of the sense voltage characteristic. Because of this, the sense voltage characteristic in this embodiment becomes a smooth curve across almost voltages between the anode and cathode as shown in Fig. 12, and it is more easily sensed compared to the conventional characteristic. The parasitic capacity between the sense terminal SEN and anode terminal A is much larger then the parasitic capacity between the sense terminal SEN and the cathode terminal K, so that the potential of the p diffusion region 35 is considerably influenced by the parasitic capacity between the sense terminal SEN and the anode terminal A. Since most part of this parasitic capacity is formed by the overlapping part of the conduction film 37 and the p diffusion region 35 and the insulating film 36 therebetween, the potential of the p diffusion region 35 depends considerably upon the thickness of the insulating film 36 and the length of the overlap of the conduction film 37 and the p diffusion region 35. The thickness of the insulating film 36 can be accurately controlled by the process control upon manufacturing, and the length of the overlap can be also accurately controlled because the p diffusion region 35 is formed by self-alignment with respect to the conduction film 37. Thus, a sense voltage characteristic which hardly varies can be obtained. On the other hand, the sense voltage characteristic does not depend upon the distance between the p diffusion regions 33 and 35 so much. However, even if it does, since the p diffusion regions 33 and 35 are formed by self-alignment, the distance therebetween can be accurately controlled, and in this way also, the variation of the sense voltage characteristic is inhibited. In the operation of the MOSFET in Fig. 8, when a voltage higher than the threshold voltage with respect to the voltage of the source terminal S is applied to the gate terminal G and a voltage higher than the voltage of the source terminal S is applied to the drain terminal D, the MOSFET turns on. That is, the p diffusion region 33 just under the conduction film 37 is inverted to form an n channel and current flows from the drain terminal D to the source terminal S through the channel. On the other hand, when the voltage applied to the gate terminal G is equivalent to or lower than the voltage applied to the source terminal S, the MOSFET turns off. That is, the channel disappears and current is blocked. The operation by which a high breakdown voltage is implemented and the operation by which a good sense voltage characteristic is obtained while current is blocked are the same as described in the case of the diode shown in Fig. 7. The operation by which a high breakdown voltage is implemented will now be described in detail, comparing the conventional diode shown in Fig. 3 with the diode according to the present invention shown in Fig. 7 . The high breakdown voltage implementing operation of the MOSFET in Fig. 8 is the same as the diode shown in Fig. 7, as stated above. In the structure of the conventional diode in Fig. 3, usually the first pn junction J₁, the second pn junction J 2, or the n⁺ - n⁻ junction between the n⁻ epitaxial layer 13 and the n⁺ diffusion region 15 brings about the maximum electric field. If a distance L from the second pn junction J₂ to the n⁺ diffusion region 15 is sufficiently large, the electric field of the n⁺ - n⁻ junction is sufficiently low, and therefore the first and second pn junctions J₁ and J₂ alone may be taken into consideration. The second pn junction J₂ generally brings about a larger electric field than the first pn junction J 1, but upon the optimization of the concentration N and thickness d of the n⁻ epitaxial layer 13 (see the formula (1)), the second pn junction J₂ can have its electric field made lower than the first pn junction J₁. At this time, the breakdown voltage of the diode is determined by the first pn junction J₁. Thus, the optimization limit is reached in the case where the electric fields of the first and second pn junctions J₁ and J₂ are the same, and the precondition is that the n⁻ epitaxial layer 13 has been completely depleted. Allowing for the above, the state of the limit is shown in a simplified way in Fig. 13. In Fig. 13, the n⁻ epitaxial layer 13 has been completely depleted, while the n⁺ diffusion region 15 is omitted as it is sufficiently shallow. The thickness of the n⁻ epitaxial layer 13 is designated by a, and the boundary between a region of the depletion layer in which a line of electric force by donor in the n⁻ epitaxial layer 13 reaches the first pn junction J₁ and a region of the depletion layer in which the line of electric force reaches the second pn junction J₂ is shown by a broken line. Voltage drop and electric field at the second pn junction J₂ are approximated by equations as follows: E = 2a x a 2 x qN D εε o x 1 a = aqN D εε o = E cr where q the electric charge of of an electron, N D is an impurity concentration of the n⁻ epitaxial layer 13, ε o is the dielectric constant of a vacuum and ε is the dielectric constant of a semiconductor material. The voltage drop and the electric field at the first pn junction J₁ is equal to those obtained by the equations (3) and (4), by making approximation in one-dimensional calculation and assuming that the concentration of the n⁻ epitaxial layer 3 and the p⁻ semiconductor substrate 12 are equal. Hence, when the electric field E in the aforementioned state is defined as a critical electric field E cr , it can be said that the limit state of this diode is that shown in Fig. 13. The case where the thickness of the n⁻ epitaxial layer 13 is increased from the state shown in Fig. 13 by Δa will now be described. Fig. 14 shows the state in this case where a broken line represents the same as in Fig. 13. A dot-dash line shows the end of the depletion layer. In the state shown in Fig. 14, since the maximum electric field of the second pn junction J₂ gets larger than the maximum electric field of the first pn junction J₁, the maximum electric field of the second pn junction J₂ is equal to E cr . Since the maximum electric field E cr of the second pn junction J₂ equals E cr in the equation (4), an equation (5) is obtained as follows: E cr = (2a + 2 Δa - b/2).b/2 a + Δa . qN D εε o = aqN D εε o The voltage drop from the second pn junction J₂ is expressed as follows: When an equation obtained from the equation (5) b = 2 (a + Δa - Δa2 + Δa a ) (∵ b < 2a ) is substituted into the equation (6), an equation is obtained as follows: V = {a² + a Δa + ( Δa² + a Δa) . ℓn ( Δa a+ Δa ) } . qN D εε o For example, the voltage when the thickness of the epitaxial layer 13 is doubled is calculated by substituting Δa = a into the equation (8) as follows: V = 2a² (1 + ℓn 1 2 ) . qN D εε o ≒ 0.614a² qN D εε o and the breakdown voltage is reduced by approximately 40% to the state of Fig. 13. In the diode in Fig. 7 according to the present invention, the conduction film 37 is connected to the p diffusion region 33 to form a field plate to the diffusion region 33. The p diffusion region 35 is floating in the completely depleted n⁻ epitaxial layer 32 in a high voltage blocking state and fixed to a certain potential because of the capacity coupling. The conduction film 39 is connected to the p diffusion region 35 to form a field plate to the p diffusion region 35. In this way, in the diode shown in Fig. 7 according to the present invention, a composite field plate is composed of the conduction film 37, the p diffusion region 35 and the conduction film 39, and the function of the composite field plate can be roughly approximated by a single field plate. Now, for the convenience of calculating the breakdown voltage of the diode in Fig. 7 according to the present invention and the usable thickness of the n⁻ epitaxial layer 32, a structure shown in Fig. 15 is assumed. In Fig. 15, the n⁻ epitaxial layer 32 gets gradually thicker to the right, and it is assumed that there is no concentration of electric field in the end of a field plate 40. When a field plate is provided, generally, the maximum electric field of the second pn junction J₂ is considerably low, and hence the breakdown voltage of the diode is determined by the first pn junction J₁ or the third junction J₃ at the surface of the n⁻ epitaxial layer 32. Accordingly, the second pn junction J₂ is ignored hereinafter. A broken line represents the end of the depletion layer. Now, when this diode maintains the voltage just before avalanche, the thickness of the n⁻ epitaxial layer 32 along the line X - X of Fig. 15 represents the maximum thickness of the n⁻ epitaxial layer 32 which is applicable in this field plate structure. This is because assuming that the n⁻ epitaxial layer in Fig. 15 has a uniform thickness equal to the thickness in the X - X section, since the depletion layers extending from the first pn junction J₁ and the third junction J₃ come into contact just before avalanche, the maximum electric field is fixed at this time, and when a voltage is further applied an eventual avalanche is caused in the first pn junction J₁ near a part under the n⁺ diffusion region 34. This is completely the same situation as the avalanche in the case of the optimum structure of the conventional diode in Fig. 3. Fig. 16 shows an electric field distribution in the X - X section. d ox denotes the thickness of an insulating film 41, x denotes the distance from the third junction J₃ to the contact point of the depletion layers, y denotes the distance from the first pn junction J₁ to the contact point of the depletion layers, and ny denotes the distance from the first pn junction J₁ to the end of the depletion layer in the p⁻ semiconductor substrate 31. Assuming that the concentrations of the n⁻ epitaxial layer 32 and the p⁻ semiconductor substrate 31 are N D and N A , respectively, n = N D /N A is satisfied. Because holding voltage of the first and third junctions J₁ and J₃ are equal, an equation is obtained as follows: (1 + n) y . qN D y 2εε o = x . qN D x 2εε o + d ox . qN D x ε′ε o where ε′ is the dielectric constant of the insulating film 41. The relative dimensions between x and y will now be discussed. (1) When x = y as shown in Fig. 17, the first and third junctions J₁ and J₃ simultaneously reach critical electric field E cr . Substituting x = y into the equation (10), an equation is obtained as follows: x = y = 2d ox ε nε′ Since the maximum thickness of the epitaxial layer 13 in the conventional structure in Fig. 3 is x (= y), as will be recognized from the following equation (12), the epitaxial layer 32 whose thickness doubles that of the conventional structure can be used in the structure according to the present invention. X + Y X = 2 (2) When x > y as shown in Fig. 18, the third junction J₃ first reaches the critical electric field E cr . The equation (10) is transformed to obtain the following equation: (1 + n) Y² x² = 1 + 2d ox ε xε′ Substituting (y²/x²) < 1 obtained from x > y into equation (13), a formula is obtained as follows: n > 2d ox ε xε′ > O Since the maximum thickness of the epitaxial layer 13 in the conventional structure of Fig. 3 equals x, the improvement ratio of the thickness of the epitaxial layer 13 is obtained by transforming the equation (10) as follows: x + y x = 1 + 1 1 + n (1 + 2d ox ε xε′ ) Applying the formula (14) to the equation (15), or substituting O and n to (2d ox ε/xε′) of the formula (14), respectively, makes the formula as follows: 1 + 1 1 + n < x + y x < 2 (3) When x < y as shown in Fig. 19, the first pn junction J₁ first reaches the critical electric field E cr . Similar to the above case (2), substituting (x²/y²) < 1 into the equation (13), a formula is obtained as follows: n < 2d ox ε xε′ Since the maximum thickness of the epitaxial layer 13 in the conventional structure of Fig. 3 equals y, the improvement ratio of the thickness of the epitaxial layer 13 is obtained by transforming the equation (10) as follows: x + y y = 1 + 1 + n 1+ 2d ox ε xε′ Applying the formula (17) to the equation (18), or substituting ∞ and n into (2d ox ε/xε′) of the equation (18), respectively, a formula is obtained as follows: 1 < X + Y Y < 2 Fig. 20 shows the results in the above (1), (2) and (3) cases in graph form. The vertical axis represents the thickness improvement ratio of the epitaxial layer and the lateral axis represents the thickness d ox of the insulating film 41 under the field plate 40. In Fig. 20, when d ox =0 is satisfied, the improvement ratio equals 1 + 1/(1 + n) , and when d ox = nxε′/2ε, the improvement ratio takes the maximum value 2. When d ox is made still larger, the improvement ratio steadily decreases, and as d ox -> ∞ the improvement ratio tends to 1. d ox , which satisfies d ox > nxε′/2ε so that the improvement ratio becomes 1 + 1/(1 + n) , is (n² + 2n)xε′/2ε. Generally, 1 < n < 2 is satisfied and, therefore, x/2 < d ox < x, allowing for ε′/ε ≒ 1/3 in SiO₂. Such a film thickness d ox is ten times as large as that of an ordinary oxidation film under the field plate. This makes it apparent that the improvement ratio of the thickness of the epitaxial layer is 1 + 1/(1+n) at the smallest if the film thickness d ox of the insulating film 41 under the field plate 40 has an ordinary thickness. As a result of the above, in the diode of Fig. 7 it is desirable that the thickness of each of the insulating films 36 and 38 is nzε′/2ε or less, where z is the thickness of the epitaxial layer 32. In this case, assuming that there is no concentration of electric field in the end of the field plate, the thickness of the epitaxial layer can be improved to be more than 1 + 1/(1 + n) times as large as in the conventional diode of Fig. 3. Even if the concentration N D of the n⁻ epitaxial layer 32 becomes higher than the concentration N A of the p⁻ semiconductor substrate 31, so that n (= N D /N A ) becomes larger, it is found that an epitaxial layer 32 thicker than conventional ones can be used. Thus, according to the present invention, the range of usable thickness and concentration of the epitaxial layer 32 is greater than in conventional embodiments. Fig. 21 is a sectional view showing a variation of the MOSFET shown in Fig. 9E. In this variation, two p diffusion regions 35a and 35b for sensing and two sense electrodes 112a and 112b connected to the regions 35a and 35b, respectively, are provided. Between the electrodes 112a and 112b, a conduction film 122 is provided which is kept floating by an insulating film 120 formed simultaneously with the insulating film 36 and a passivation film 121, formed simultaneously with a passivation film 107, so as to serve as a field plate. The extension of this variation is possible because an arbitrary number of sense electrodes are provided. Fig. 22 is a sectional view showing another variation of the MOSFET shown in Fig. 9E. In this variation, in the interface between the p⁻ semiconductor substrate 31 and the n⁻ epitaxial layer 32, a p⁺ buried region 123 is formed opposed to the p diffusion region 35. In a part of the n⁻ epitaxial layer 32 between the p diffusion region and the p⁺ buried region 123, the depletion layers come easily in contact with each other from upper and lower sides, and consequently, the end of the depletion layer is increasingly urged to extend to the right in the surface of the n⁻ epitaxial layer 32. This causes the surface electric field to be more effectively relieved. The present invention is not limited to the aforementioned diodes and MOSFETs but is applicable to various semiconductor devices. Figs. 23 to 38 are sectional views showing applications, and these will now be described. (A) Bipolar Transistor (Fig. 23) Instead of the electrode 111 in Fig. 9E, electrodes 111a and 111b are provided which are insulated by a passivation film 124 formed simultaneously with a passivation film 107. The electrode 111b connected to the p diffusion region 33 serves as a base electrode, the electrode 111a connected to the n⁺ diffusion region 40 serves as an emitter electrode, and the electrode 113 connected to the n⁺ diffusion region 34 serves as a collector electrode. (B) IGBT (Insulated Gate Bipolar Transistor) ( Fig. 24) Here, the n⁺ diffusion region 34 is relatively large, and a p diffusion region 125 is provided in the n⁺ diffusion region 34. The electrode 111 serves as an emitter electrode, the conduction film 37 serves as a gate electrode, and the electrode 113 connected to the p diffusion region 125 serves as a collector electrode. On/Off is controlled by On/Off of a MOS structure similar to that of Fig. 9E. It is known that when this transistor turns on, the state resistance is low due to the effect of the conductivity modulation in the n⁻ epitaxial layer 32 serving as a base of this pnp transistor. (C) Collector Short IGBT ( Fig. 25) In this IGBT, the p diffusion region 125 of the IGBT in Fig. 24 and the n⁻ epitaxial layer 32 are short-circuited through the collector electrode 113 and the n⁺ diffusion region 34. This is useful to enable electrons to be quickly pulled out when the transistor turns off, to quicken the turning-off speed. (D) MCT (MOS Controlled Thyristor) (Fig. 26) Here, the n⁺ diffusion region 34 is again relatively large and the p diffusion region 125 is provided in the n⁺ diffusion region 34. Further, an n diffusion region 126 is provided in the p diffusion region 33, and a p⁺ diffusion region 127 is provided in the n diffusion region 126. An n⁺ layer 128 and an electrode 129 are provided on the bottom surface of the p⁻ semiconductor substrate 31. The electrode 111 connected to the n diffusion region 126 and the p⁺ diffusion region 127 serves as a cathode electrode, the conduction film 37 serves as a gate electrode, and the electrode 113 connected to the p diffusion region 125 serves as an anode electrode. When positive potential is applied to the gate electrode 37, an n channel in the surface of the p diffusion region 33 just under the gate electrode 37 turns on to cause electrons to flow in the anode electrode 113. In response to this holes are injected from the p diffusion region 125 to the n⁻ epitaxial layer 32. The injected holes flow into the n diffusion region 126 to start the thyristor operation. On the other hand, when negative potential is supplied to the gate electrode 37, a p channel in the surface of the n diffusion region 126 just under the gate electrode 37 turns on, and holes injected from the p diffusion region 125 are drawn into the p⁺ diffusion region 127 to stop the thyristor operation. The electrode 129 is kept the same potential as that of the cathode electrode 111. The n⁺ layer 128 prevents the holes from passing to the p⁻ substrate 31. (E) Anode Short MCT (Fig. 27) In this MCT, the p diffusion region 125 of the MCT of Fig. 26 and the n⁻ epitaxial layer 32 are short-circuited through the anode electrode 113 and the n⁺ diffusion region 34. This is useful to pull electrons out quickly when the transistor turns off, to quicken the turn-off speed. (F) Bipolar Transistor (Fig 28) In this bipolar transistor, the n⁺ layer 128 and the electrode 129 are provided in the bottom surface of the p⁻ substrate 31 of the bipolar transistor of Fig. 23. The electrode 129 is kept the same potential as that of the emitter electrode 111a. (G) IGBT (Fig 29) In this IGBT, the n⁺ layer 128 and the electrode 129 are provided in the bottom surface of the p⁻ substrate 31 of the IGBT of Fig 24. The electrode 129 is kept the same potential as that of the emitter electrode 111. The n⁺ layer 128 prevents holes injected from the p diffusion region 125 to the n⁻ epitaxial layer 32 from passing to the p⁻ substrate 31. (H) Collector Short IGBT (Fig 30) This IGBT is a combination of the IGBT of Fig. 25 and the IGBT of Fig. 29. (I) IGBT (Fig. 31) In this IGBT, the n⁺ layer 128 of the IGBT of Fig. 29 is not provided all over but only on a part of the bottom surface of the p⁻ substrate 31 (under the collector electrode 113). The n⁺ layer 128 begins injecting electrons when the current of the IGBT reaches a certain value, to start thyristor operation, and thus the current density can be made large. (J) Collector Short IGBT (Fig. 32) This IGBT is a combination of the IGBT of Fig. 25 and the IGBT of Fig. 31. (K) MCT (Fig. 33) In this MCT, the n⁺ layer 128 of the MCT of Fig. 26 is not provided all over but only on a part of the bottom surface of the p⁻ substrate 31 (in the left half of the figure). Since holes injected from the p diffusion region 125 can be pulled out into the p⁻ substrate 31 when the transistor turns off, by short-circuiting the p⁻ substrate 31 and the electrode 129 under the anode electrode 113, the turn-off speed can be hastened. (L) Anode Short MCT (Fig. 34) This MCT is a combination of the MCT of Fig. 27 and the MCT of Fig. 33. (M) MCT (Fig. 35) In this MCT, a p channel in the surface of the n diffusion region 126 just under the gate electrode 37 of the MCT of Fig. 26 is changed into a depletion type. Specifically, the surface portion of the n diffusion region 126 corresponding to the p channel is inverted into p-type by p-diffusion. (N) Anode Short MCT (Fig. 36) This MCT is a combination of the MCT of Fig. 27 and the MCT of Fig. 35. (O) MCT (Fig. 37) This MCT is a combination of the MCT of Fig. 33 and the MCT of Fig. 35. (P) Anode Short MCT (Fig. 38) This MCT is a combination of the MCT of Fig. 28 and the MCT of Fig. 29. In the aforementioned semiconductor devices, when used in applications similar to those of the aforementioned diode of Fig. 1 and the MOSFET of Fig. 2, a high breakdown voltage and a good sense voltage characteristic can be obtained. However, the present invention is not limited to the aforementioned semiconductor devices.

Claims: A semiconductor device, comprising a first conductivity type semiconductor substrate (31); a second conductivity type first semiconductor region (32) formed on said semiconductor substrate (31) in an island manner and forming a first p-n junction (J₁) with said substrate; a first conductivity type second semiconductor region (33) formed on said semiconductor substrate (31) to surround said first semiconductor region (32) as seen from above and forming a second p-n junction (J₂) with said first semiconductor region; a first conductivity type third semiconductor region (35,35a) formed at a surface of the first semiconductor region (32) in the vicinity of said second semiconductor region (33) and concentric with it; a voltage applying region (34) formed at the surface of the first semiconductor region (32) near its centre; and a sense electrode (SEN,112,112a) formed on said third semiconductor region (35,35a) for use in detecting a voltage applied to said voltage applying region (34) in a current blocking state; and characterised in that a first insulating film (36) is formed on the surface of the first semiconductor region (32) between the second and the third semiconductor regions (33,35,35a) to overlap the surface of the second and the third semiconductor regions (33,35,35a); and in that a first conductive film (37) is formed on said first insulating film (36). A semiconductor device as claimed in Claim 1, characterised in that the voltage applying region (34) comprises a second conductivity type fourth semiconductor region (34) with an impurity concentration larger than that of said first semiconductor region (32). A semiconductor device as claimed in Claim 1 or Claim 2, characterised in that an electrode (A,111′) is formed on the second semiconductor region (33) and connected to the first conductive film (37). A semiconductor device as claimed in any one of Claims 1 to 3, characterised in that the insulating film (36) has a thickness less than nzε′/2ε, where n is the ratio of an impurity concentration of the semiconductor substrate (31) to an impurity concentration of the first semiconductor region (32), z is the thickness of the first semiconductor region (32), ε is the dielectric constant of a semiconductor material used for the semiconductor device, and ε′ is the dielectric constant of the first insulating film (36). A semiconductor device as claimed in any one of Claims 1 to 4, characterised in that a second insulating film (38,120) is formed on the first semiconductor region (32) opposite to the first insulating film (36) with respect to said third semiconductor region (35) to overlap the surface of the third semiconductor region (35), and in that second conductive film (39,122) is formed on the second insulating film (38,120). A semiconductor device as claimed in Claim 5, characterised in that the second insulating film (38,120) is of greater thickness than the first insulating film (36,122). A semiconductor device as claimed in Claim 5 or Claim 6, characterised in that the sense electrode (SEN,112, 112a,112b) is connected to the second conductive film (38,122). A semiconductor device as claimed in any one of Claims 5 to 7, characterised in that a second first conductivity type third semiconductor region (35b) is formed at the surface of the first semiconductor region (32) opposite to the first third semiconductor region (35a) with respect to the second conductive film (38,122). A semiconductor device as claimed in Claim 8, characterised in that a second sense electrode (112b) is formed on the second third semiconductor region (35b). A semiconductor device as claimed in any one of Claims 1 to 4, characterised in that a first conductivity type buried region (123) with an impurity concentration greater than that of the semiconductor substrate (31) is formed at the boundary between the semiconductor substrate (31) and the first semiconductor region (32) opposite to the third semiconductor region (35). A semiconductor device as claimed in any one of Claims 1 to 10, characterised in that a second conductivity type fifth semiconductor region (40,126) is formed at the surface of the second semiconductor region (33) at one end thereof, the first insulating film (36) and the first conductive film (37) being located on the second semiconductor region (32) between the first and the fifth semiconductor regions (32,40). A semiconductor device as claimed in Claim 11, characterised in that an integrated first electrode (S,111) is formed on the second and the fifth semiconductor regions (33,40,126). A semiconductor device as claimed in Claim 11, characterised in that separate first electrodes (111b,111a) are formed on the second and the fifth semiconductor regions (33,40) respectively. A semiconductor device as claimed in any one of Claims 2 to 11, characterised in that a first conductivity type sixth semiconductor region (125) is formed at the surface of the fourth semiconductor region (34). A semiconductor device as claimed in Claim 14, characterised in that an integrated second electrode (113) is formed on said fourth and sixth semiconductor regions (34,125). A semiconductor device as claimed in Claim 14 or Claim 15, characterised in that a first conductivity type seventh semiconductor region (127) is formed at the surface of the fifth semiconductor region (40,126), the first insulating film (36) and the first conductive film (37) being provided on said fifth semiconductor region (40,126) between the second and the seventh semiconductor regions (33,127). A semiconductor device as claimed in Claim 16, characterised in that an integrated first electrode (111) is formed on the fifth and the seventh semiconductor regions 126,127). A semiconductor device as claimed in any one of Claims 13 to 17, characterised in that a second conductivity type semiconductor layer (128) is formed on a surface of the said semiconductor substrate (31). A semiconductor device as claimed in Claim 18, characterised in that the semiconductor layer (128) is provided on only a part of said surface of the semiconductor substrate (31). A semiconductor device as claimed in Claim 14, characterised in that a first conductivity type seventh semiconductor region (127) is formed at the surface of the fifth semiconductor region (126), and in that a first conductivity type channel region is formed at the surface of the fifth semiconductor region (126) between the second and the seventh semiconductor regions (35,127), the first insulating film (36) and the first conductive film (37) being provided on said channel region. A method of manufacturing a semiconductor device according to any of the preceding claims comprising the steps of: preparing a first conductivity type semiconductor substrate (31); forming a second conductivity type semiconductor layer on said semiconductor substrate (31); and selectively introducing a first conductivity type impurity into said semiconductor layer to provide a second conductivity type first semiconductor region (32) formed on said semiconductor substrate (31) in an island manner and a first conductivity type second semiconductor region (33) formed on said semiconductor substrate (31) to surround said first semiconductor region (32) as seen from above; an insulating film (36) and a conductive film (37) being formed in this order on an end portion of said first semiconductor region (32) adjacent to said second semiconductor region (33); a first conductivity type third semiconductor region (35,35a) being formed at the surface of the first semiconductor region (32) in the vicinity of the second semiconductor region (33) by self-alignment using the conductive film (37) as a mask; a voltage applying region (34) being formed at the surface of the first semiconductor region (32) near its centre; and a sense electrode (SEN,112, 112a) being formed on the third semiconductor region (35,35a) for use in detecting a voltage applied to the voltage applying region (34) in a current blocking state. A method of manufacturing a semiconductor device as claimed in Claim 21, characterised in that said voltage applying region (34) comprises a second conductivity type fourth semiconductor region (34) with an impurity concentration greater than that of said first semiconductor region (32). A method of manufacturing a semiconductor device as claimed in Claim 22, characterised in that it comprises the further step of forming a second conductivity type fifth semiconductor region (40) at the surface of the second semiconductor region (33) by self-matching using the conductive film (37) as a mask while forming the fourth semiconductor region (34) at the same time. A method of manufacturing a semiconductor device as claimed in any one of Claims 21 to 23, characterised in that the insulating film (36) has a thickness less than nz ε′/2ε , where n is the ratio of an impurity concentration of the semiconductor substrate (31) to an impurity concentration of the first semiconductor region (32), z is the thickness of the first semiconductor region (32), ε denotes the dielectric constant of a semiconductor material used for the semiconductor device, and ε′ is the dielectric constant of the insulating film (36).

Inventors: FUKUNAGA MASANORI C O MITSUBIS, KIDA TAKISHI C O MITSUBISHI DE, MAJUMDAR GOURAB C O MITSUBISHI, SATSUMA KAZUMASA C O MITSUBISH, TERASHIMA TOMOHIDE C O MITSUBI, YAMAGUCHI HIROSHI C O MITSUBIS, YOSHIZAWA MASAO C O MITSUBISHI, FUKUNAGA, MASANORI, C/O MITSUBISHI DENKI, K. K., KIDA, TAKISHI, C/O MITSUBISHI DENKI, MAJUMDAR, GOURAB, C/O MITSUBISHI DENKI, K. K., SATSUMA, KAZUMASA, C/O MITSUBISHI DENKI, TERASHIMA, TOMOHIDE, C/O MITSUBISHI DENKI, K. K., YAMAGUCHI, HIROSHI, C/O MITSUBISHI DENKI, K. K., YOSHIZAWA, MASAO, C/O MITSUBISHI DENKI, K. K.
Applicants: MITSUBISHI ELECTRIC CORP, MITSUBISHI DENKI KABUSHIKI KAISHA
Application year: 1990
Main classification: H01L29
IPC codes: H01L29, H01L21