Semiconductor light-emitting device and method of fabricating the same

Abstract: A semiconductor light-emitting device comprises a light-emitting layer (10) including a pn junction formed by a plurality of In x Ga y Aℓ 1-x-y P (0 ≦ x, y ≦ 1) layers, and a light-emitting-layer holding layer (15) consisting of an indirect transition type Ga 1-w Aℓ w As (0 ≦ w ≦ 1) provided on an opposite side to a light-outputting side. The holding layer (15) has a sufficiently small light absorption coefficient for the light from the light-­ emitting layer (10) although its band gap is small and improves the light emission efficiency of the semicon­ ductor light-emitting device.

Description: The present invention relates to a semiconductor light-emitting device and a method of fabricating the same. More particularly, this invention relates to a high-brightness semiconductor light-emitting diode (LED) using a III-V group compound semiconductor which emits light in a green region, and a method of fabricating the same. Since the last few years, the advancement of the information processing technology increases the demand for LEDs as a light source for optical communications, optical recording media, display and so forth. Development of green-light emitting LEDs of a short wavelength among all LEDs is strongly demanded for higher information density. Light emission in a range from yellow to infrared has been realized using materials, such as GaAs, GaP, GaAℓAs and GaInAsP. The wavelength limit of light emitted is considered to be about 700 nm. In x Ga y Aℓ 1-x-y P (0 ≦ x, y ≦ 1); hereinafter may be referred to simply as InGaAℓP) mixed crystal, which has a lattice matching with a GaAs substrate, is considered most promising as a material that has a band gap of about 1.9 to 2.4 eV with a direct transition type band structure and is expected to cause highly-efficient light emission. The use of such a mixed crystal semiconductor is effective in producing LEDs with a hetrojunction structure and high light emission efficiency. In fabricating such LEDs which emit light of a short wavelength, since the band gap energy of the substrate is always smaller than energy of emitted light, the substrate absorbs most portion of the irradiated light, thus significantly reducing the brightness. The same can be said to the case where the substrate is located on the side of the non-light-emitting face. That is, light emitted from the light-emitting layer and entering the substrate is not effectively guided outside. As described above, LEDs with InGaAℓP, serving as a light-emitting layer, which has a large band gap suitable for green light emission, does not have a sufficient light outputting efficiency due to light absorbed by the substrate. A holding layer disposed on the opposite side to the light-output side of a semiconductor light emitting element is disclosed in Japanese patent application JP 63236385. It is therefore an object of the present invention to provide an LED which realizes a high light emission efficiency with InGaALP as a light-emitting layer and a method of fabricating the same According to the present invention there is provided a light-emitting diode, comprising: a light-emitting layer comprising a plurality of In x Ga y Al 1-x-y P (0≤x≤, 0≤y≤ 1) layers forming a pn junction; a first electrode provided on a light-outputting side of the light-emitting layer; and a second electrode provided on an opposition side to the light-outputting side of the light-emitting layer; a first contact layer is interposed between the light-emitting layer and first electrode, wherein the first contact layer consists of a group III-V compound semiconductor of the indirect transition type which has a band gap smaller than the band gap corresponding to the wavelength of the emitted light. A method of fabricating an LED comprises the steps of: depositing a light-emitting layer, including a pn junction formed by a plurality of In x Ga y Aℓ 1-x-y P (0 ≦ x, y ≦ 1 ) layers, on a substrate by vapor phase epitaxial growth; depositing a light-emitting layer holding layer, consisting of indirect transition type Ga 1-w Aℓ w As (0 ≦ w ≦ 1), on the light-emitting layer by vapor phase epitaxial growth; and removing the substrate. Another LED fabricating method comprises the steps of: depositing a light-emitting-layer holding layer, consisting of indirect transition type Ga 1-w Aℓ w As (0 ≦ w ≦ 1), on a substrate by liquid phase epitaxial growth, and growing a thin GaAs protective layer on a surface of the light-emitting-layer holding layer; heating and vaporizing the GaAs protective layer in a vapor phase chamber to expose a clean surface of the light-emitting-layer holding layer, and depositing a light-emitting layer, including a pn junction formed by a plurality of In x Ga y Aℓ 1-x-y P (0 ≦ x, y ≦ 1) layers, on the exposed surface by vapor phase epitaxial growth; and removing the substrate. According to the present invention, since a light-emitting-layer holding layer consisting of indirect transition type GaAℓAs is provided for an InGaAlP light-emitting layer, the holding layer has sufficiently low light absorption of light emitted from the light-emitting layer though having a narrow band gap, thus providing an LED with a high light emitting efficiency. According to the present method, after a light-emitting layer and a light-emitting-layer holding layer are sequentially deposited on a substrate by vapor phase epitaxial growth, or after the light-emitting layer is deposited by vapor phase epitaxial growth on the light-emitting-layer holding layer deposited on the substrate by liquid phase epitaxial growth, the substrate is removed, thereby providing an LED without a substrate that has great light absorption. Further, removing the substrate can relax stress on the light-emitting layer, so that the lift of the LED can expand by providing the lattice matching between the light-emitting layer and its holding layer. This invention can be more fully understood from the following detailed description when taken in conjunction with the accompanying drawings, in which: Figs. 1 through 7 illustrate the structures of devices which have a light-emitting-layer holding layer. Fig. 1 is a cross sectional view of an LED having a light-emitting layer with a double heterojunction structure fabricated by the first method; Fig. 2 is a cross sectional view of an LED according to the first embodiment having a contact layer in addition to the structure of Fig. 1 Fig. 3 is a diagram illustrating the light absorption coefficient of AℓAs; Fig. 4 is a cross sectional view of an LED according to the second embodiment having a light-emitting layer with a single heterojunction structure fabricated by the first method; Fig. 5 is a cross sectional view of an LED having a light-emitting layer with a double heterojunction structure fabricated by the second method; Fig. 6 is a cross sectional view of an LED according to the third embodiment in which an intermediate band gap layer is eliminated from the structure of Fig. 5 and a contact layer is added thereto; Fig. 7 is a cross sectional view of an LED in which an intermediate band gap layer is eliminated from the structure of Fig. 5 Figs. 8 through 12 illustrate the structures of a device according to the present invention which has a light reflecting layer in place of a light-emitting-layer holding layer. Fig. 8 is a cross sectional view of an LED according to the fourth embodiment having a light-emitting layer with a double heterojunction structure; Fig. 9 is a cross sectional view illustrating an LED according to the fifth embodiment in which the contact layer of the fourth embodiment consists of InGaAℓP; Fig. 10 is a cross sectional view illustrating an LED according to the sixth embodiment in which the lightemitting layer of the fourth embodiment is modified to have a single heterojunction structure; Fig. 11 is a cross sectional view illustrating an LED according to the seventh embodiment in which the contact layer of the fourth embodiment consists of GaAℓAs; and Fig. 12 is a cross sectional view of an LED according to the eighth embodiment with a light reflecting layer having a GaAℓAs multi-layered structure. Fig. 1 illustrates an LED with a double heterojunction structure. The non-light-emitting side of a light-emitting layer 10, which comprises an n-type InAℓP clad layer 12, an undoped InGaAℓP active layer 13 and a p-type InAℓP clad layer 14, is held through a p-type InGaAℓP intermediate band gap layer 16 by a light-emitting-layer holding layer (hereinafter referred to as LEL holding layer) 15. An n-side electrode 11 is formed on the surface of the clad layer 12. The LEL holding layer 15 is mounted via a p-side electrode 17 to a base 18. This LED is fabricated by the following method. For instance, the n-type InAℓP clad layer 12, undoped InGaAℓP active layer 13 and p-type InAℓP clad layer 14 are deposited through vapor phase epitaxial growth on a buffer layer on a GaAs substrate by the MOCVD method to thereby form the light-emitting layer 10. On this light-emitting layer 10, the p-type INGaAℓP intermediate buffer layer 16 and p-type GaAℓAS LEL holding layer 15 are sequentially deposited through vapor phase epitaxial growth also by the MOCVD method. Then, the GaAs substrate is removed and electrodes are formed to make the substrate-removed side as a light outputting face. The opposite side is then mounted on the base 18. Fig. 3 illustrates the light absorbing coefficient of AℓAs as an indirect transition semiconductor in a visible light range. Although the band gap is 2.1 eV and not large, the light absorbing coefficient in the range of green wavelength is small due to the indirect transition type. Although an increase in light absorption from approximately 550 nm is recognized, the increase is not as sharp as the one attained by a direct transition type semiconductor and can therefore be said to be almost transparent at 550 nm. From this, GaAℓAs having much Aℓ composition is also transparent in the range of green wavelength. As a result, the LED of this example emits green light with high light emission efficiency. More specific fabrication processes for this example will be described below. The crystal growth is carried out by the MOCVD method using, as raw materials, trimethylindium (TMI), trimethylgallium (TMG) and trimethylaluminum (TMA) as methyl-based organic metals of the group III, arsin (AsH₃) and phosphine (PH₃) as hydrides of the group V. With hydrogen as carrier gas, the raw materials are fed to a reaction tube and crystal is grown on the substrate placed on an SiC-coated graphite susceptor. The pressure in the reaction tube is 30 to 100 kPa (0.3 to 1.0 atm) with the total flow rate of approximately 11/min, and the substrate is subjected to induction heating to about 700°C. As this substrate, an Si-doped n-type (100) GaAs substrate with a carrier concentration of 3 × 10¹⁸/cm³ was used. First, an n-type GaAs buffer layer (Si doped; 2 × 10¹⁸/cm³) is grown 2 µm thick on the substrate. Then, a 2 µm thick n-type In 0.5 Aℓ 0.5 P clad layer 12 (Se doped; 1 × 10¹⁸/cm³), 0.5-µm thick undoped In 0.5 Ga 0.25 Aℓ 0.25 P active layer 13 and 2-µm thick p-type In 0.5 Aℓ 0.5 P clad layer 14 (Mg doped; 1 × 10¹⁸/cm³) are sequentially grown. On the top of the resultant structure, a p-type In 0.5 Ga 0.2 Aℓ 0.3 P intermediate band gap layer 16 (Mg doped; 3 × 10¹⁸/cm³) is grown 100 nm thick, followed by the growing of a p-type In 0.2 Aℓ 0.8 P LEL holding layer 15 (Mg doped; 3 × 10¹⁸/cm³) 30 µm thick. Thereafter, the GaAs substrate and the overlying GaAs buffer layer are completely removed by mechanical polishing and etching. In the etching was used an etchant having a mixture of 28% ammonium water, 35% hydrogen peroxide water and water in the composition ratio of 1:30:9. After removal of the substrate side, In electrodes 11 and 17 were formed and the resultant structure is mounted on the base 18 with the substrate-removed face being a light emitting face. GaAℓAs of the LEL holding layer has a large Aℓ concentration of 0.8 and is indirect transition type and the absorbing coefficient at the wavelength of emitted light of the device is as small as about 5 × 10²/cm. The intermediate buffer layer 16 is used to make the transition of the band gap smoother. The resultant LED emitted green light with a brightness of about 50 mcd. In this example, the light outputting side is made n type which permits high concentration doping, which improves the current spreading and assures the formation of an ohmic electrode. Fig. 2 illustrates the first embodiment which is a slight modification of the first example. In the first embodiment, after a GaAs buffer layer is formed on a GaAs substrate, a GaAℓAs second buffer layer 19 is further grown 10 µm, and a light-emitting layer and LEL holding layer are formed on the resultant structure as per the first example. The resultant LED chip is mounted on the base with the second buffer layer 19 left on the light outputting side. In this embodiment, the n-type second buffer layer 19 serves as a contact layer to make the current spreading on the light outputting side and the formation of the ohmic electrode surer. The second buffer layer or contact layer 19 substantially is transparent to the wavelength of emitted light. Fig. 4 illustrates the second embodiment which uses a single heterojunction structure for the light-emitting layer 10. On the GaAs substrate are grown a GaAs buffer layer and a GaAℓAs second buffer layer 23 followed by the growing of an n-type InGaAℓP layer 22 (5 µm thick with a carrier concentration of 3 × 10¹⁷/cm³) and a p-type InAℓP layer 21 (3 µm thick with a carrier concentration of 1 × 10¹⁸/cm³). The subsequent processes are the same as those of the previous embodiment. The GaAs substrate and GaAs buffer layer are also removed followed by the formation of an electrode, and the resultant LED chip is mounted on the base 18. The n-type GaAℓAs second buffer layer 23 is left as the contact layer. This second buffer layer 23 has a thickness of 0.5 µm and a carrier concentration of 2 × 10¹⁸/cm³. This embodiment can also provide green light emission with high brightness. Fig. 5 illustrates an LED according to a second example. In this example the step of forming a thick LEL holding layer by the MOCVD method is eliminated. In other words, an LEL holding layer 31 consisting of p-type GaAℓAs is deposited 50 to 100 µm thick on the GaAs substrate by a liquid phase epitaxial growth method (LPE method). An intermediate band gap layer 16 is deposited on the layer 31 by the MOCVD method, followed by the deposition of a light-emitting layer 10 including a p-type clad layer 14, an active layer 13, and an n-type clad layer 12. With the GaAs substrate removed and electrodes formed on the resultant structure to thereby constitute an LED chip, this LED chip is then mounted on the base 18. More specific processes of fabricating the LED of this example will be now described. For instance, an LEL holding layer 31, consisting of thick p-type Ga 0.2 Aℓ 0.8 As, is deposited on the p-type GaAs substrate (Zn doped with a carrier concentration of 3 × 10¹⁸/cm³) by the LPE method. On the surface of the resultant structure, a GaAs protective layer is deposited 10 nm to prevent the oxidization of Aℓ. Then, this wafer is placed in an MOCVD device, and is heated under a low-pressured atmosphere, evaporating the GaAs layer, and exposing a clean surface of the Ga 0.2 Aℓ 0.8 As. An InGaAℓ p-type intermediate band gap layer 16 for causing smooth transition of the band gap is deposited on the exposed surface. The light-emitting layer 10 is then formed through the vapor phase epitaxial growth of a p-type In 0.5 Aℓ 0.5 P clad layer 14 in 2 µm (Mg doped with a carrier concentration of 1 × 10¹⁸/cm³), a 0.5 µm thick undoped In 0.5 Ga 0.25 Aℓ 0.25 P active layer 13, and a 3 µm thick n-type In 0.5 Aℓ 0.5 P clad layer 12 (Se doped with a carrier concentration of 1 × 10¹⁸/cm³) in the named order. Finally, electrodes 11 and 17 are formed after removing the GaAs substrate, and the resultant structure is mounted on the base 18, with the LEL holding layer at the bottom. According to this example, since the LEL holding layer consisting of GaAℓAs is formed by the LPE method, a thick LEL holding layer can easily be provided. With a process of forming a thick GaAℓAs LEL holding layer and depositing a light-emitting layer thereon only by the MOCVD method, however, it is not only difficult to provide a thick light-emitting layer but also it is not possible to attain a GaAℓAs layer with a good surface condition, so that the light-emitting layer has poor crystallinity. In this example the combination of MOCVD and LPE methods makes it possible to gain a thick LEL holding layer as a base of the light-emitting layer. Fig. 6 illustrates the third embodiment which is a slight modification of the example shown in Fig. 5. In this embodiment, an n-type GaAℓAS contact layer 19 is formed on the light-emitting layer 10. The GaAℓAS contact layer 19 has only to be as thick as 3 µm, and can be easily grown by the MOCVD method. The intermediate band gap layer 16 in Fig. 5 is omitted in this embodiment. The provision of the contact layer 19 ensures the current spreading and facilitates the formation of the electrodes. Fig. 7 shows a third example which is also a slight modification of the one shown in Fig. 5; in the third example the intermediate layer 16 is omitted, so is the contact layer shown in Fig. 6. Since the n-type InAℓP clad layer 12 permits high concentration doping, the current spreading is sufficient and good ohmic electrodes can be formed without positively providing a contact layer. According to the arrangements previously described, indirect transition type GaAℓAS LEL holding layer is provided for the light-emitting layer including an InGaAℓP layer to eliminate the influence of light absorption of the substrate, thus providing a green light-emitting LED with high light-emitting efficiency. In these embodiments, combination of other elements in the group III or V, or the reduction of compositions is possible as needed in order to improve the lattice matching between the individual layers. The shape, number, and arrangement of electrodes and the plane orientation of the substrate can be modified in various manners. Further, according to the present invention, the light emitted toward the substrate side from the light-emitting layer can be reflected to the light outputting side by providing a light-reflecting layer, instead of the LEL holding layer, between the light-emitting layer and the substrate. This light reflection can prevent absorption by the GaAs substrate with a narrow band gap, which is the main cause of light absorption. The following will describe the fourth to eighth embodiments provided with a light reflecting layer. A multiple film (layers-stacked film) having different compositions is used as a light reflecting layer; the cycle of the alternately-stacked layers is set about the wavelength of emitted light. To improve the reflection factor, it is desirable that the cycle of the alternately-stacked layers be λ/2, λ/8, 2λ, and so forth with respect to the wavelength of emitted light, λ. If the band gap of the contact layer is increased to be transparent to the emitted light in order to reduce the light absorption in the contact layer, the light emitting efficiency can be enhanced further. Using an indirect transition type semiconductor material even with a small band gap in place of a contact layer with a large band gap can however reduce the light absorption and facilitate the layer growth on the light-emitting layer. Fig. 8 is a cross-sectional view illustrating the schematic structure of an LED according to the fourth embodiment of the present invention in which a light reflecting layer is provided between the substrate and light-emitting layer to prevent the substrate from absorbing light. On a p-type GaAs substrate 41 a p-type GaAs buffer layer 42 and a p-type InGaP intermediate band gap layer 43 are deposited. Deposited on this intermediate band gap layer 43 is a light reflecting layer 44 having a multi-layer structure of p-type InAℓP and p-type InGaAℓP layers. On the light reflecting layer 44 is deposited a light-emitting layer having a double heterojunction structure, which comprises a p-type InAℓP clad layer 45, an InGaAℓP active layer 46 and an n-type InAℓP clad layer 47. An n-type InAℓP contact layer 48 is deposited on this light-emitting layer. Referring to Fig. 8, reference numeral "51" is a p-side electrode (light outputting side electrode) and reference numeral "52" an n-side electrode. The intermediate band gap layer 43 serves to prevent the ohmic connection from being hindered by a large band gap difference between the buffer layer 42 and light reflecting layer 44. The light reflecting layer 44 is made to have a lamination cycle of about 1/2 of the wavelength of emitted light in order to enhance the reflection factor. The band gap of the contact layer 48 is set greater than that of the active layer 46 so that it becomes transparent to the wavelength of emitted light. The method of fabricating the above device will now be specifically described. The individual semiconductor layers were grown by the metal organic chemical vapor deposition (MOCVD) method. The crystal growth is carried out by the MOCVD method using, as raw materials, trimethylindium (TMI), trimethylgallium (TMG) and trimethylaluminum (TMA) as methyl-based organic metals of the group III, arsin (AsH₃) and phosphine (PH₃) as hydrides of the group V. With hydrogen as carrier gas, reactive gas is supplied to a quartz reaction tube and crystal was grown on the substrate placed on an SiC-coated graphite susceptor. The pressure in the reaction tube is 30 to 100 kPa (0.3 to 1.0 atm) and the substrate is subjected to high-frequency heating to about 700°C. As this substrate, Zn-doped p-type GaAs with a carrier concentration of 3 × 10¹⁸ cm⁻³ was used. The orientation of the substrate is (100). First, on the p-type GaAs substrate a p-type GaAs (Zn doped; 3 × 10¹⁸ cm⁻³) buffer layer 42 is deposited 2 µm thick and the p-type In 0.5 Ga 0.5 P (Zn doped; 3 × 10¹⁸ cm⁻³) intermediate band gap layer 43 is deposited 0.5 µm thick. The latter layer is to have a band gap between GaAs and InAℓP bad gaps, and prevents non-ohmic connection due to a large band gap. On the layer is deposited the 5 µm thick light reflecting layer 44 which has an alternate lamination of a p-type In 0.5 Aℓ 0.5 P layer and p-type In 0.5 Ga 0.2 Aℓ 0.3 P. This portion is Zn-doped and has a carrier concentration of 1 × 10¹⁸ cm⁻³, and the alternate lamination is made with 100 nm, a lamination cycle of about 1/2 of the wavelength of a semiconductor, in order to reflect emitted light efficiently. Then, on the light reflecting layer 44 is formed a double heterojunction structure comprising a 2 µm thick p-type In 0.5 Aℓ 0.5 P clad layer 45 (Zn doped; 1 × 10¹⁸ cm⁻³), 0.5-µm thick undoped In 0.5 Ga 0.25 Aℓ 0.25 P active layer 46 and 2-µm thick n-type In 0.5 Aℓ 0.5 P clad layer 47 (Se doped; 1 × 10¹⁸ cm⁻³). Then, an n-type In 0.5 Aℓ 0.5 P contact layer (Se doped; 3 × 10¹⁸ cm⁻³) 48 transparent to the wavelength of emitted light is grown 5 µm thick. Finally, In electrodes 51 and 52 are formed on the back of the substrate 41 and the top of the contact layer 48, completing an LED which emits light in a green region. According to the thus fabricated LED, light generated from the light-emitting layer having a double heterojunction structure travels toward both the side of the n-side electrode (light outputting side electrode) 52 and the side of the substrate 41. The light going toward the substrate side is reflected efficiently at the light reflecting layer 44 and travels to the light-outputting side electrode 52. It is therefore possible to prevent light absorption by the substrate 41, thus realizing a green LED with a significantly improved brightness of about 50 mcd as compared with the case having no light reflecting layer 44. Further, permitting the light-outputting side electrode (contact layer 48) to be an n-type that facilitates high-concentration doping can realize an excellent device with current spreading. According to the embodiment, as described above, an LED with high brightness capable of emitting light in a green region could be prepared, without using a special substrate, by depositing the light reflecting layer 44 with a multi-layer structure, which suppresses light absorption, on a high-quality and inexpensive GaAs substrate having a relatively narrow band gap, and further depositing the light-emitting layer (45-47) consisting of InGaAℓP. Mass production of green LEDs at a relatively low cost by the above method can greatly contribute to the information industry, such as optical communications. Although the cycle of the alternate lamination of the light reflecting layer having a multi-layer structure is set to about 1/2 in this embodiment, the cycle may also be set to 2/1, 1/1, 1/4 or 1/8 with the same effect and the thickness of the light reflecting layer is sufficient to be about 3 µm. Further, the contact layer has only to have a composition to be transparent to the wavelength of emitted light. Figs. 9 through 12 are cross-sectional views schematically illustrating the respective structures of the fifth to eighth embodiments of the present invention. The fifth embodiment in Fig. 9 is the embodiment shown in Fig. 8 modified so that the contact layer, last grown, is replaced a 5 µm thick n-type InGaAlP (Se doped; 3 × 10¹⁸ cm⁻³) having a composition transparent to the wavelength of emitted light. The composition of this contact layer 58 is In 0.4 Ga 0.2 Aℓ 0.4 P whose growth is easier than InAℓP. All the other layers are the same as those of the previous embodiment. The light-emitting layer of the sixth embodiment shown in Fig. 10 has a single heterojunction structure including a 2 µm thick p-type In 0.5 Aℓ 0.5 P (Zn doped; a carrier concentration of 5 × 10¹⁷ cm⁻³) 65 and a 2 µm thick n-type In 0.5 Ga 0.25 Aℓ 0.25 P (Se doped: a carrier concentration of 2 × 10¹⁶ cm⁻³) 66, not a double heterojunction structure. In this case, the structure is more simplified so that the LED with no absorption loss has been rather easily obtained. A contact layer 58 is an n-type InGaAℓP which is easier to grow than InAℓP as per the embodiment in Fig. 8. In the seventh embodiment in Fig. 11, a n-type GaAℓAS (Se doped; a carrier concentration of 5 × 10¹⁸ cm⁻³ and a thickness of 3 µm) contact layer 78 is used in place of the contact layer of the embodiment shown in Fig. 8. The contact layer 78 has Ga 0.2 Aℓ 0.8 As, greater Aℓ composition, and a wider band gap than GaAs. This composition provides an indirect transition type and makes the absorption coefficient smaller, which is about 5 × 10² cm⁻¹, merely 1/100 of GaAs. That is, although the band gap of the contact layer 78 is smaller than the band gap corresponding to the wavelength of emitted light, light absorption in the contact layer 78 can be reduced significantly due to the indirect transition type. In this embodiment, using the fast-growing GaAℓAS for the contact layer 78 can facilitate the fabrication of the device, and thus reduces the cost. This method could also produce LEDs with high brightness. Part of this layer may be removed as needed to further reduce the light absorption. In the eighth embodiment in Fig. 12 the composition of the light reflecting layer is changed: a light reflecting layer 84 having a multi-layer structure of a p-type Ga 0.3 Aℓ 0.7 As and a p-type Ga 0.2 Aℓ 0.8 As both Zn-doped and having a carrier concentration of 2 × 10¹⁸ at a cycle of 100 nm. The light-emitting layer has the same structure as that of the fourth embodiment shown in Fig. 8. The GaAℓAS layer when made to have an alternate lamination structure can serve to reflect light with high efficiency. Since growing of InAℓP which does not help grow a thick film can be avoided as much as possible by making the contact layer 78 n-type GaAℓAS, the manufacturing cost can be further reduced. As the band gap of GaAℓAS is smaller than that of InGaAℓP but greater than GaAs, it is unnecessary to form an intermediate band gap layer between the light reflecting layer 84 and substrate 41. In the fourth to eighth embodiments, the shape, number, and arrangement of electrodes, the orientation of the substrate, and further the thickness of the semiconductor layer can be modified in various manners as needed according to the specification. The structure of the light-emitting layer portion is not restricted to a heterojunction structure but may be a homojunction. The InGaP intermediate band gap layer is formed to prevent the ohmic connection from being hindered by the large band gap difference between the GaAs substrate and InGaAsP of the light-emitting layer. Other semiconductors having a band gap between these two layers can also be utilized. Further, a method of changing the composition of the buffer layer from that of the clad layer to provide a concentration gradation is also effective. It is possible to use a InGaAlP clad layer having a composition transparent to the wavelength of emitted light in place of the InAℓP clad layer. Further, Sb may be mixed, or P or In may be mixed in the GaAs layer or GaAℓAs layer in order to improve the lattice matching of the individual layers or select a band gap. Alternately, InGaAℓP may be replaced with InGaP. According to the fourth to eighth embodiments, as described above, the light reflecting layer is formed between the substrate and light-emitting layer to reflect light going to the substrate side toward the light-outputting side to thereby solve low light outputting efficiency, and absorption of emitted light by the substrate can be reduced, thus realizing a semiconductor light-emitting device which can enhance the brightness.

Claims: A light emitting diode, comprising: a light-emitting layer (10; 45-47; 65, 66) comprising a plurality of In x Ga y Al 1-x-y P (0≤x≤1, 0≤y≤1) layers forming a pn junction; a first electrode (11, 52) provided on a light-outputting side of the light-emitting layer; and a second electrode (17, 51) provided on an opposite side to the light-outputting side of the light-emitting layer; a first contact layer (19, 23, 48, 58, 78) is interposed between the light-emitting layer and the first electrode, characterised in that the first contact layer consists of a group III-V compound semiconductor of the indirect transition type which has a band gap smaller than the band gap corresponding to the wavelength of emitted light. A light emitting diode according to claim 1, further characterised in that the III-V compound semiconductor forming the first contact layer (19, 23, 48, 58, 78) comprises Al as a group III element. A light emitting diode according to claim 2, further characterised in that the III-V compound semiconductor forming the first contact layer (19, 23, 48, 58, 78) consists of GaAlAs. A light emitting diode according to any of claims 1 to 3, further characterised in that a second contact layer (15, 31) is interposed between the light-emitting layer and the second electrode, the second contact layer consisting of a group III-V compound semiconductor. A light emitting diode according to claim 4, further characterised in that the III-V compound semiconductor forming the second contact layer (15, 31) is of the indirect transition type. A light emitting diode according to claim 5, further characterised in that the III-V compound semiconductor forming the second contact layer (15, 31) comprises Al as one group III element. A light emitting diode according to claim 6, further characterised in that the III-V compound semiconductor forming the second contact layer (15, 31) consists of GaAlAs. A light emitting diode according to any of claims 1 to 3, further characterised in that a light-reflecting layer (44, 84) is arranged between the light-emitting layer and the second electrode, and is formed by a plurality of stacked group III-V compound semiconductor layers. A light emitting diode according to claim 8, further characterised in that each of the stacked group III-V compound semiconductor layers has one of two compositions, alternate layers of the stack having the same composition and adjacent layers of the stack having different compositions. A light emitting diode according to claim 9, further characterised in that the light-reflecting layer (44, 84) is formed by the stacked group III-V compound semiconductor layers which are selected from a group consisting of InAlP, InGaAlP, and GaAlAs. A light emitting diode according to claim 10, further characterised in that the light-reflecting layers (44) are formed by a plurality of alternately stacked InAlP and InGaAlP layers. A light emitting diode according to claim 10, further characterised in that the light-reflecting layer (84) is formed by a plurality of stacked GaAlAs layers, each GaAlAs layer having one of two compositions, alternate GaAlAs layers of the stack having the same composition and adjacent layers of the stack having different compositions. A light emitting diode according to any of claims 8 to 12, further characterised in that the period of the stacked group III-V compound semiconductor layers is set to be nλ with respect to the wavelength λ of emitted light from the light-emitting layer, wherein n is one of 2, 1, 1/2, 1/4 and 1/8 . A light emitting diode according to any of claims 1 to 13, further characterised in that the light-emitting layer consists of the p-type and n-type In x Ga y Al 1-x-y P layers (14, 12; 45, 47) and an undoped In x Ga y Al 1-x-y P layer (13, 46) interposed between the p-type and n-type In x Ga y Al 1-x-y P layers. A light emitting diode according to any of claims 1 to 13, further characterised in that the light-emitting layer consists of p-type and n-type In x Ga y Al 1-x-y P layers (21, 22).

Inventors: HATANO AKO, IZUMIYA TOSHIHIDE, OHBA YASUO, HATANO, AKO, IZUMIYA, TOSHIHIDE, OHBA, YASUO, HATANO, AKO, C/O INTELLECTUAL PROPERTY DIVISION, IZUMIYA, TOSHIHIDE, C/O INTELLECTUAL PROPERTY DIV., OHBA, YASUO, C/O INTELLECTUAL PROPERTY DIVISION
Applicants: TOSHIBA KK, KABUSHIKI KAISHA TOSHIBA
Application year: 1990
Main classification: H01L33
IPC codes: H01L33