A semiconductor device for detecting or emitting a magnetic line of force or light

Abstract: A semiconductor device (100) for detecting or emit­ ting a magnetic line of force or light is so provided that the major surface (11) of its built-in semiconduc­ tor chip (10) has a predetermined inclination angle (8) relative to a mount surface (91) of a mount substrate (90). An active layer of element (16) for detecting a magnetic line of force or light or an element (24) for emitting a magnetic line of force or light is formed on the major surface (11) of the semiconductor chip. It is, therefore, possible to achieve a smaller mount thickness as defined relative to a mount surface and to detect a magnetic line of force or light coming in a direction parallel to the mount surface or to emit a magnetic line of force or light in a direction vertical to the mount surface.

Description: The present invention relates to a semiconductor device according to the preamble of Claim 1. Such a device is disclosed in JP-A-62 113 454. As will be described below, the semiconductor device has a built-in semiconductor chip with a magnetic-line-of-force- or light-detecting or -emitting element mounted thereon, such as a Hall element, a photodiode, a light emitting diode and a semiconductor laser. Figs. 1 and 2 show a conventional semiconductor device containing a semiconductor chip having an element mounted thereon to detect, for example, a magnetic line of force or light. As shown in Figs. 1 and 2, a semiconductor chip 80 has a magnetic-line-of-force- or light-detecting element, such as a Hall element and a photodiode, and is so sealed in a package 82 that its major surface 81 is vertically oriented with respect to a mount surface 91 of a mount substrate 90 of an electronic machinery. By the "major surface" appearing in a later description is meant a chip's surface on which is formed a magnetic-line-of-force- or light-detecting or -emitting element. External leads 83 extend from the package 82 in a direction parallel to the major surface 81 of the chip. The external lead 83 has a narrowed forward end portion inserted into a socket hole 93 of the mount substrate 90. A semiconductor device 200 thus provided is called a single in-line package type. The semiconductor device 200 can detect, for example, a magnetic line of force A (or light) coming in a direction parallel to the mount surface 91 because the major surface 11 of the semiconductor chip is oriented vertical to the mount surface 91. However, a mount thickness H as indicated by arrows in Figures 1 and 2 becomes greater since the semiconductor device 200 is so configured that the major surface 81 of the chip is formed in the direction perpendicular to the mount substrate 90. It is, therefore, not possible to detect a magnetic line of force or light coming from the direction vertical to the mount surface 90. In JP-A-57 106 183, the direction of the laser beam produced by a laser diode is determined and adjusted, before the laser diode is fixed to a stem, so that the output beam is directed with high accuracy in a predetermined direction relative to the stem. As a result, the diode may be slightly inclined relative to its stem. JP-A-60 052 063 discloses an inclined mounting surface (on which a light-receiving element is to be directly mounted) of a stem substrate. Two conductor wires are spaced, one on each side of the inclined mounting surface. Reference is also made to IBM Technical Disclosure Bulletin, Vol. 22, no. 8A, January 1980, New York, US, p. 3165, which discloses an Hall cell sensor whose Hall sensor chip is edge mounted with its upper edge face parallel to the plane of the carrier substrate on which the chip is mounted. An object of the present invention is to provide a semiconductor device having a smaller vertical mount thickness as defined relative to a mount surface, which detects a magnetic line of force or light coming in a direction parallel to the mount surface of a mount substrate and that coming in a direction vertical to the mount surface. Another object of the present invention is to provide a semiconductor device having a smaller vertical mount thickness as defined relative to a mount surface which emits a magnetic line of force or light in a direction parallel to the mount surface of a mount substrate and in a direction vertical to the mount surface. Another object of the present invention is to provide a package formation mold which is suitable to the ready manufacture of a low-cost semiconductor device. According to the present invention, there is provided a semiconductor device according to Claim 1. This invention can be more fully understood from the following detailed description when taken in conjunction with the accompanying drawings, in which: Figures 1 and 2, each, are a side view showing a conventional semiconductor device as viewed in a different direction; Figure 3 is a side view showing a semiconductor device according to an embodiment of the present invention, Figure 3A being a perspective view showing a first semiconductor chip built in the semiconductor device, Figure 3B being a cross-sectional view as taken along line 3B-3B in Figure 3A, Figure 3C being a perspective view showing a second semiconductor chip built in the semiconductor device and Figure 3D being a cross-sectional view as taken along line 3D-3D in Figure 3C; Figures 4A to 4C are cross-sectional views showing a sequence of the manufacturing steps of the semiconductor device which manufacturing in not a part of the claimed invention; Figure 5 is a diagram for explaining an arrival of a magnetic line of force at the semiconductor device; Figure 6 is a characteristic curve showing a relation of an inclination angle  of the semiconductor chip built in the semiconductor device to an output; and Figure 7 is a diagram for explaining the emission of a magnetic line of force at the semiconductor device. The embodiment of the present invention will be explained below with reference to the accompanying drawings. A semiconductor device according to an embodiment of the present invention is a gull wing lead type device composed of a surface mounting type device (hereinafter referred to as an SMD) built-in magnetic line-of-force- or light-detecting or -emitting semiconductor chip. As shown in Fig. 3, a magnetic-line-of-force- or light-detecting or -emitting semiconductor chip 10 is sealed in a package 12 such that its major surface 11 is located in a direction parallel to an upper surface 12A of the package 12. External leads 13A and 13B are projected from the left- and right-sides of the package 12, respectively. The external leads 13A and 13B are bent partway in the direction of a mount surface 91, to provide a first bent portion 13A 2 , 13B 2 and again bent in a direction parallel to the mount surface 91, to provide a second bent portion 13A 3 , 13B 3 . The forward outer end portions 13A 4 , 13B 4 of the external leads 13A and 13B are each bonded to a conductive film pattern 92 which is formed on the mount surface 91. Such external leads are called "gull wing leads". In Fig. 3, L1 and L2 denote the lengths of the external leads 13A and 13B, respectively, which are defined in a direction to the mount surface 91, noting that the length L1 is different from the length L2 as shown in Fig. 3. The package 12 by itself is tiltable relative to the mount surface 91. The semiconductor chip 10 is so sealed in the package 12 that the major surface 11 of the chip has an inclination angle  with respect to the mount surface 91. Fig. 3A is a perspective view showing one form of a built-in semiconductor chip of one form of the semiconductor device. Fig. 3B is a cross-sectional view as taken along line 3B-3B in Fig. 3A. As shown in Figs. 3A and 3B, for example, active layers of Hall element 16 for detecting a magnetic line of force is formed in, for example, a GaAs substrate 15. A surface on which is formed the active layers, such as active layers of Hall element, is called as the major surface 11. A protective film (an insulating film) 17 is formed on the GaAs substrate 15. Bonding pads 14 are locally provided on the protective film 17 and electrically connected to the active layers of Hall element 16. The semiconductor device contains the semiconductor chip 10 as set forth above and can detect, for example, a magnetic line of force. Active layers of photodiode, active layers of phototransistor, active layers of photothyristor or the like may be used in place of the active layers of Hall element 16. In this case, the semiconductor chip and hence the semiconductor device detects light. Fig. 3C is a perspective view showing a second form of the semiconductor chip for the semiconductor device. Fig. 3D is a cross-sectional view as taken along line 3D-3D in Fig. 3C. As shown in Figs. 3C and 3D, a first clad layer 20 of P type InGaAℓP is formed on, for example, a P type GaAs substrate 19. An active layer 21 of InGaAℓP is formed on the first clad layer 20 and a second clad layer 22 of n type InGaAℓP is formed on the active layer 22. A cap layer 23 of n type GaAS is formed on the second clad layer 22 and an electrode 18 is formed on the cap layer. An oscillation area (emitting area) is formed at the active layer 20 to correspond to the electrode 18. A laser beam is emitted from the oscillation area 24. A surface of the active layer 21 which forms the oscillation area 24 is called a major surface 11. The semiconductor device can contain the aforementioned semiconductor chip 10 and, for example, emit light. Not only a semiconductor laser but also a light emitting diode and a laser diode for instance may be employed to emit light from the semiconductor chip. A method for manufacturing a semiconductor device which is useful for understanding the present invention will be explained below with reference to Figs. 4A to 4C. As shown in Fig. 4A, a semiconductor chip 10 manufactured by an ordinary manufacturing method with a magnetic-line-of-force- or light-detecting or -emitting element formed thereon is prepared. Then the semiconductor chip 10 is bonded to a bed 31 of a lead frame-a die bonding step. A bonding pad, for instance, not shown, on the semiconductor chip 10 is electrically connected by wires 32 to corresponding external leads 13A and 13B of the lead frame - a wire bonding step. Then a package 12 for sealing the semiconductor chip 10 and inner end portions 13A 1 , 13A 2 of the external leads 13A and 12B, together with the wires, is formed, as shown in Fig.4B, with the use of a corresponding package formation mold. As the mold, use may be made of an ordinary mold which is used in the manufacture of an ordinary semiconductor device. In this case, a package 12 is molded by pouring insulating resin, such as synthetic resin, into the mold. At that time, a sealing packaging step is carried out with the major surface 11 of the semiconductor chip 10 situated parallel to the upper surface 12A of the package 12 in which case the external leads 13A and 13B are projected from the corresponding positions at both the sides of the package. The external leads 13A and 13B are cut away from the lead frame in a manner to have respective lengths. Then the external leads 13A and 13B are bent partway in a direction of the bottom of the package 12 and then bent in the outer direction of the package 12. At this time, the external leads 13A and 13B are made to have different lengths upon being bent in the direction vertical to the aforementioned bottom direction (the mount direction). In Fig. 4, the external leads 13A and 13B are made to have lengths L1 and L2, respectively, and a relation L1 < L2. As shown in Fig. 4C, with 1.5mm representing a dimension D between the external leads 13A and 13B extending from both the sides of the package 12 and 0.87mm representing a difference (L2 - L1) between the vertical portions of the external leads 13A and 13B, the major surface 11 of the semiconductor chip 10 can be made at an inclination angle of about 30° relative to the mount surface of the mount substrate (90 in Fig. 3) of the electronic device. By so doing, the major surface 11 of the chip 10 has an inclination angle  to the mount surface of the mount substrate. The manner of detecting a magnetic line of force or emitting light on the semiconductor device 100 of the embodiment will be explained below with reference to Figs. 5 to 7. Fig. 5 is a diagram showing the manner in which a magnetic line of force reaches of the aforementioned chip 10 on the first embodiment. Fig. 6 is a characteristic curve showing a relation of the inclination angle of the chip built in the semiconductor device of the first embodiment to an output obtained. Let it be assumed that, in Fig. 5, the magnetism A acts parallel to the mount surface, not shown. In the semiconductor device 100 of the first embodiment, the major surface 11 of the chip 10 has a predetermined inclination angle  to the mount surface, not shown. For this reason, the major surface 11 is so oriented as to allow the magnetic line of force to be directed not only in a horizontal direction but also in a vertical direction to the mount surface. It is, therefore, possible to detect, as shown in Fig. 5, a magnetic line of force, A, coming in a direction parallel to the mount surface. As indicated by the characteristic curve in Fig. 6, a relation of the aforementioned inclination angle  to a detection output Vh is such that a maximum value vhm is attained at  = 90° and a minimum value (that is, zero) at  = 0. It has been found that this relation can be expressed by the following equation: vh = vhm·sin In the semiconductor device 100 of the first embodiment, it is possible to obtain an output of 50% of the maximum value Vhm, for example, at  = 30°. The output, in this case, is lowered in comparison with that of the conventional SIP type semiconductor device shown in Figs. 1 and 2. According to the present semiconductor device, since the major surface of the built-in semiconductor chip is not formed in a direction vertical to the mount surface, the mount thickness corresponding to H in Figs. 1 and 2 can be made smaller when the package is mounted on the mount substrate. The lowering of the output Vh can be compensated for by, for example, improving the semiconductor chip 10 per se or any other proper means. That is, the semiconductor device of the embodiment can adequately be employed without decreasing the effects of the present invention as defined by the appended Claim. The characteristic of the present semiconductor device upon the detection of light, not magnetism, can be expressed by a sine function as shown in Fig. 6. The conventional SIP type semiconductor device as shown in Figs. 1 and 2 cannot detect a magnetic line of force or light coming in a direction vertical to the mount surface, this being a case of  = 0. In the semiconductor device of the first embodiment, it is possible to detect the magnetic line of force or light coming in a direction vertical to the mounting surface, because the major surface 11 of the chip 10 is so oriented as to have an inclination angle (90-) to the magnetic line of force or light coming from the vertical direction. The output characteristic of the present semiconductor device with respect to the magnetic line of force or light coming from the direction vertical to the mount surface can be expressed as a sine function as shown in Fig. 6. Fig. 7 is a diagram showing the state of the light emission of a light emitting element, such as a semiconductor laser, mounted on the chip 10 of the semiconductor device of the present embodiment. Let it be assumed that, in Fig. 7, a line 30 is parallel to the mount surface, not shown. In the semiconductor device 100 of the present embodiment, the major surface 11 of the semiconductor chip is so oriented as to have an inclination angle  to the mount surface. The light E emitting from the semiconductor chip 10 has an inclination angle  with respect to the mount surface. By so doing, the emitting light E can be expressed by horizontal and vertical components el and ev as vectorially given below: E = el + ev Further, at the output of the light E = VE, the output Vv of the vertical component ev can be expressed by the following sin function: Vv = VE·sin With a light emitting element-equipped chip 10 built in the semiconductor device 100 of the first embodiment, a light component vertical to the mount surface can be emitted, ensuring a semiconductor device having a smaller mount thickness as opposed to H in Figs. 1 and 2. According to the manufacturing method as shown in Figs. 4A to 4C, it is only necessary to exchange a lead frame configuration (including external leads 13A and 13B) upon comparison with an ordinary manufacturing method. It is possible to utilize a majority of the existing equipment, in particular an expensive assembling equipment, without being modified. No extra assembling facility is required in the manufacturing of a semiconductor device of the present invention. That is, it is thus possible to readily manufacture a semiconductor device 100 at low costs without using any special equipment. Reference signs in the Claims are intended for better understanding and shall not limit the scope.

Claims: A semiconductor device comprising: a leadframe having a bed (31), a first lead (13A) and a second lead (13B) each lead having a first and a second inner end-portion respectively, the first and second inner end-portions being disposed at opposite sides of said bed (31); a semiconductor chip (10) having a chip major surface (11), said semiconductor chip being bonded on said bed (31) with said major surface substantially parallel to said bed (31) and to said first and second inner end-portions, said chip being electrically connected to said first and second inner end-portions; a package (12) which seals said semiconductor chip (10) bonded on said bed (31) and said first and second inner end-portions such that the first lead projects from a first side of said package, said second lead projects from a second side of said package which second side is opposite to said first side, said package (12) having first and second major surfaces (12A) substantially parallel to said chip major surface (11); and wherein said first and second leads are bent to provide respective first bent portions (13A 2 , 13B 2 ) outside said package and again bent to provide respective second bent portions (13A 3 , 13B 3 ) outside said package such as to provide respective first and second outer end-portions (13A 4 , 13B 4 ) of said first and second leads, the outer end-portions each extending in a direction away from said package, characterized in that : said semiconductor chip has an active layer (16) provided on said chip major surface forming either a detector or an emitter of one of a magnetic line of force and light; said first and second outer-end portions are connected to a conductive film pattern (92) provided on a mount surface (91) of a mount substrate (90); the section between the first bent portion and the second bent portion of said first lead is directed towards said mount surface, there being a first vertical length (L1) between the first Bent portion of the first lead and said mount surface; the section between the first bent portion and the second bent portion of said second lead is directed towards said mount surface, there being a second vertical length (L2) between the first bent portion of the second lead and said mount surface, and said first vertical length (L1) is different from said second vertical length (L2), whereby said major surface is inclined to said mount surface (91) at a predetermined acute angle such that said detector or said emitter is capable of detecting or emitting one of a magnetic line of force and light, whether coming from a direction parallel or perpendicular to said mount surface (91) or emitting in a direction parallel or perpendicular to said mount surface (91).

Inventors: FUKUDA TOSHIKAZU, INOUE KAZUHIKO, TOMISAWA YUTAKA, FUKUDA, TOSHIKAZU, INOUE, KAZUHIKO, TOMISAWA, YUTAKA, FUKUDA, TOSHIKAZU, C/O INTELLECTUAL PROPERTY DIV., INOUE, KAZUHIKO, C/O INTELLECTUAL PROPERTY DIV., TOMISAWA, YUTAKA, C/O INTELLECTUAL PROPERTY DIV.
Applicants: TOSHIBA KK, KABUSHIKI KAISHA TOSHIBA
Application year: 1990
Main classification: H01L21
IPC codes: H01L33, H01L31, H05K3, H01L23, H01L43, H01S5