Method of forming a lateral PNP transistor

Abstract: A process of forming a lateral PNP transistor that includes the steps of: providing a chip of semicon-ductor material including an isolated N- device region (14) over a P substrate (16), with an N-epitaxial layer (20), a N+ buried subcollector (18), and a reach-through region (26); implanting N dopant material at a relatively low power and low dosage into a selected implant region (32), of the device region; implanting N dopant material at a relative­ ly higher power and higher dosage into the implant region to form emitter and collector regions (34,36) in the device region such that an intrinsic base region (38), is defined there-between.

Description: The present invention relates generally to semiconductor devices and more particularly to a lateral PNP transistor and a method of making the same. It is known in the art to form lateral PNP transistors substantially concurrently with, and using processes compatible with, vertical NPN tran-sistors. Due primarily to previous lithographic limitations, however, these lateral PNP transistors were fabricated with undesirably wide base widths, and exhibited poor operating characteristics relative to the vertical NPN transistors. The wide base widths typically resulted in lateral PNP transistors having poor frequency response, and low beta-gain. Recent advances in lithographic technology now permit the fabrication of lateral PNP devices having sub-micron width base regions. However, these lateral transistors are typically formed on a low concentration N- epitaxial layer, the epitaxial layer concentration being dictated by the vertical NPN transistor requirements. As the base widths of the lateral PNP transistors are decreased in accordance with lithographic technology to improve frequency response and increase beta-gain, the low epitaxial layer concentration results in the problems of PFET collector current leakage, base current leakage, and emitter-collector punch-through. IBM Technical Disclosure Bulletin, Vol. 13, No. 6, page 1457, November 1970, shows a method of fabricating a lateral PNP transistor wherein an N type diffusion is performed in an N- type epitaxial region before emitter and collector regions are formed. The emitter and collector regions are diffused into the N diffused epitaxial region so as to form a graded base region there-between. U.S.-A-4.510.676 to Anantha et al. shows a method of forming a lateral PNP transistor on an integrated circuit with and in a process compatible with the formation of a vertical NPN transistor. IBM Technical Disclosure Bulletin, Vol. 22, No. 7, pgs. 2939-2942, December 1979, shows a method of forming a lateral PNP transistor structure wherein a silicon dioxide sidewall is used as a mask to form a thin base region. The sidewall is grown over the edge of a doped polysilicon layer. One electrode is formed by out-diffusion from the polysilicon layer into an underlying epitaxial region. The second electrode is formed by implantation, diffusion, or out-diffusion into the epitaxial region using the sidewall as a mask. U.S.-A-4.005.451 to Martinelli et al. shows a lateral transistor wherein the collector and emitter region configurations and doping profiles are selected to promote current flow at a location spaced away from the device surface. U.S.-A-4.283.236 to Sirsi is exemplary of "double-diffused" type lateral transistors, showing a lateral PNP transistor formed in an N- epitaxial region and having base and emitter regions both diffused through the same aperture. The region between the emitter and collector diffusions is counter-doped with a P type ion implant. U.S.-A-4 167 425 to Herbst describes a lateral bipolar transistor having a semiconductor substrate of first conductivity type with an epitaxial layer arranged thereon of second conductivity type. Collector and emitter zones of first conductivity type are laterally arranged in the epitaxial layer. A base terminal contact zone connects with the epitaxial layer and a buried layer of second conductivity type is placed in the epitaxial layer below the emitter and collector zones. The buried layer has a doping concentration higher than the epitaxial layer so that a minority carrier current emanating from the emitter zone in a vertical direction is minimized. A doping profile of the emitter zone and portions of the base adjacent thereto is provided such that an additional potential barrier is created adjacent to and directly beneath the emitter zone in order to further minimize minority charge carriers emanating at a vertical direction from the emitter zone. The principle object of the present invention is to provide a lateral PNP transistor. Another object of the present invention is to provide a lateral PNP transistor of the above-described type which can be formed on an N- substrate. A further object of the present invention is to provide a lateral PNP transistor of the above-described type which provides improved operating characteristics, including increased beta-gain and increased frequency response, relative to the prior art. Yet another object of the present invention is to provide a method of forming a lateral PNP transis-tor which is compatible with the generally concurrent formation of a vertical NPN transistor. In accordance with the present invention, there is provided a method of forming a lateral PNP transistor, the method comprising the steps of: providing a body of semiconductor material including an isolated N- device region; implanting an N type dopant material at a first power and first dosage into a selected implant region of the device region; implanting N-type dopant material at a second power and second dosage into the implant region; wherein the first power is lower than the second power and the first dosage is lower than the second dosage; and forming P-type emitter and collector regions in the device region such that an intrinsic base region is defined between the collector and emitter regions in the implant region whereby the implant region has a higher N-type dopant concentration proximate the bottom of the emitter region and a lower N-Type dopant concentration proximate the surface of the base region. Further objects, features, and advantages of the present invention will become apparent from a consideration of the following detailed description of the invention when read in conjunction with the drawing FIGs., in which: FIG. 1 shows a cross-sectional view at one step in the process of constructing a lateral PNP transis-tor in accordance with the present invention; FIG. 2 shows a cross-sectional view at a later step in the fabrication of the lateral PNP transistor of FIG. 1; and FIG. 3 is a top view of the device of FIG. 2. Referring now to the drawings, FIG. 1 shows a portion 10 of a semiconductor chip 12 including an isolated device region 14 formed over a P conductivity type substrate 16. Substrate 16 comprises, for example, a silicon wafer having a <100> crystallographic orientation and a resistivity in the range of about 15 ohm-cm. An N+ buried subcollector region 18 is formed on the surface of substrate 16, and pursuant to a subsequent epitaxial growth step, extends upward into an overlying N-epitaxial layer 20. Buried subcollector region 18 is formed, for example, by a diffusion or ion implantation of arsenic ions into the surface of substrate 16 in a conventional manner during the fabrication process. Epitaxial layer 20 is then grown, in a conven-tional chemical vapor deposition process, over the surface of P substrate 16 so as to yield a concentration in the range of about 1x10¹⁶ atoms/cm3. During the epitaxial growth of N- region 20, subcollector region 16 diffuses upwards into the overlying region to provide a subcollector concentration in the range of about 1x10²⁰ atoms/cm3. An isolation trench 22 extends from the surface of chip 12 downward to substrate 16, and bounds the edges of region 14 to electrically isolate the device formed therein from other devices on chip 12. Trench 22 is formed by conventional methods, for example by photolithographic masking, etching, filling, and planarizing. An N+ subcollector reachthrough region 26, formed, for example by deep ion implantation of phosphorus to a concentration in the range of about 1x10²⁰ atoms/cm3, extends along the rightmost edge (as viewed in the figures) of region 14 from the surface of the device downward into contact with subcollector region 18. Generally concommitant with the formation of the structure in device region 14, a vertical NPN tran-sistor (not shown) is fabricated in adjacent, electrically isolated device region 30. Continuing with respect to FIG. 1, in accordance with the present invention, a two-step N+ ion implan-tation process is used to form an N implant region 32 within layer 20 and spaced from subcollector reach-through region 26. The implantations are performed with a relatively light N+ type dopant, preferably Phosphorus. The present inventors have determined that, through the use of the two step ion implantation process described herein, it is possible to provide lateral PNP transistors having vastly improved operating characteristics, without affecting the concurrently formed vertical NPN transistors. To best illustrate the present invention, it will be described first for a device having an epitaxial layer concentration of about 1x10¹⁶ atoms/cm3 (layer 20 as described above), an emitter region (the formation of which is shown below) having a depth into the epitaxial region of about 0.4 µm, and a base width W, as described below, of about 0.5 µm. The first ion implantation is performed with a relatively high dopant concentration in the range of about 3x10¹² atoms/cm2, and at a relatively high energy in the range of about 350 KeV. The second ion implantation is performed with a relatively lower dopant concentration in the range of about 8x10¹¹ atoms/cm2, and at a relatively low energy in the range of about 100 KeV. It will be understood that, while for purposes of explanation the ion implanta-tions have been referred to as first and second, they may be performed in either order with the same result. Referring now to FIGS. 2 and 3, P type emitter and collector regions 34, 36, respectively, are formed in the surface of layer 20 such that the emitter region is contained entirely in the doped region 32, while the collector region overlaps at least a portion of the doped region. Emitter and collector regions 34, 36 are formed by conventional methods, such as masking and ion diffusion, with the emitter region having a depth D of about 0.4 µm. An intrinsic base region 38 is defined between the adjacent edges of the emitter and collector regions 34, 36, proximate the device surface. A heat anneal, for example at 900 degrees C and for 40 minutes, is performed to activate the double ion implantation. The lateral PNP transistor thus formed in region 14 can be straightforwardly completed through the connections of conductive terminals (not shown). When formed using the double ion implantation described above, N region 32 yields a surface concen-tration of about 5x10¹⁶ atoms/cm3, a concentration sufficient to provide adequate punch-through protec-tion for a device having a base width W of about 0.50 µm. N region 32 further yields a higher concen-tration, of about 7x10¹⁶ atoms/cm3, proximate the bottom of emitter region 34. This higher concentration along the emitter-extrinsic base junction functions to inhibit the problems of base current leakage and PFET collector current leakage described above. It is to be understood that the steps of forming the emitter, base, and N implant regions 34, 36, 32, respectively, can be performed in any selected order. The present inventors have determined that, for a lateral PNP transistor formed in an N- region having a concentration of about 1x10¹⁶ atoms/cm3, and an emitter depth D of about 0.4 microns, base widths W of from 0.10 to 1.0 µm can be achieved through appropriate selections within the following ranges: a first ion implantation having a relatively high energy level of about 350 KeV and a relatively high dose in the range of about 1x10¹²-2x10¹³ atoms/cm2, and a second ion implantation having a relatively low energy level of about 100 KeV and a relatively low dose in the range of about 2x10¹¹-3x10¹² atoms/cm2. It will be appreciated that if the concentration of epitaxial layer 20, the desired base width W, or the depth D of emitter region 32 are varied, the parameters of the two ion implantations must be varied accordingly. The desired ion implantations will, of course, provide a doping profile which is greater proximate the bottom of the emitter region than at the surface. The doping concentration proximate the surface of the base region is selected to be sufficient to inhibit an emitter-collector punch-through breakdown of about 2 V at 1 nA/micron-meter of emitter surface junction length L, but not so high as to unacceptably depress the transistor beta-gain. The doping concentration proximate the bottom of the emitter region is select-ed to be equal to or greater than about 7x10¹⁶ atoms/cm3. There is thus provided a method for forming a lateral PNP transistor which exhibits substantially improved operating characteristics in comparison to similar prior art devices. The relatively narrow base width, e.g., 0.5 µm in the embodiment shown, yields a device having a beta-gain on the order of 50 for a collector current of 1 nA/µm, and a frequency response in the range of about 300 MHz. The dopant concentration in the intrinsic base region proximate the device surface is sufficient to inhibit emitter-collector punch-through, while the relatively higher dopant concentration in the vicinity of the bottom of the emitter region, i.e. along the emitter-extrinsic base junction, is sufficient to decreases base current and PFET collector current leakage. The present invention provides these substantial benefits while requiring only one additional masking step; the masking step required to form implant region 32. The invention is particularly applicable in the formation of lateral PNP transistors on semiconductor chips concurrently with the formation of vertical NPN transistors.

Claims: A method of forming a lateral PNP transistor, said method comprising the steps of: providing a body of semiconductor material including an isolated N-type device region (14); implanting an N type dopant material at a first power and first dosage into a selected implant region (32) of said device region (14); implanting N-type dopant material at a second power and second dosage into said implant region (32); wherein said first power is lower than said second power and said first dosage is lower than said second dosage; and forming P-type emitter (34) and collector (36) regions in said device region (14) such that an intrinsic base region (38) is defined between said collector (36) and emitter (34) regions in said implant region (32), whereby said implant region (32) has a higher N-type dopant concentration proximate the bottom of said emitter region (34) and a lower N-type dopant concentration proximate the surface of said base region (38). A method in accordance with claim 1 wherein said body comprises silicon semiconductor material. A method in accordance with claim 1 or 2 wherein said device region is selected to have a concentration of about 1x10¹⁶ atoms/cm3. A method in accordance with claim 3 wherein: the ions used for said first and second implanting steps are phosphorus ions; one of said implanting steps is selected to have a dosage in the range of about 1x10¹¹-3x10¹² atoms/cm2 and an energy of about 100 KeV; and the other of said implanting steps is selected to have a dosage in the range of about 1x10¹²-2x10¹³ atoms/cm2 and an energy of about 350 KeV. A method in accordance with claim 1 wherein said emitter region is formed entirely in said implant region and the concentration in said implant region proximate the bottom of said emitter region is selected to be equal to or greater than about 7x10¹⁶ atoms/cm3.

Inventors: HABITZ PETER-ANTON, HSIEH CHANG-MING, HUANG YI-SHIOU, HABITZ, PETER-ANTON, HSIEH, CHANG-MING, HUANG, YI-SHIOU
Applicants: IBM, INTERNATIONAL BUSINESS MACHINES CORPORATION
Application year: 1990
Main classification: H01L21
IPC codes: H01L21, H01L29, H01L27