Portable semiconductor memory device

Abstract: A portable semiconductor memory device comprises an internal memory (1) or storing data; an address bus (10), a control bus (11) and a data bus (12) which are connected to the internal memory) (1); a connector (35) or electrically connecting the address bus, the control bus and the data bus to terminal equipment(B); and a contact confirmation/control circuit (15) which is connected to the address bus, the control bus and the data bus and in which known data is previously stored, and which outputs the known data to the data bus when a read control signal is input from the terminal equipment over the control bus and when a given address is specified on the address bus.

Description: BACKGROUND OF THE INVENTION Field of the Invention The present invention relates to the use of a contact confirmation/control circuit, and particularly to the use of such circuit for a memory device which allows access to internal memory when connected to a terminal equipment through a connector. Description of the Related Art Fig. 7 shows the configuration of a circuit of a conventional portable semiconductor memory device. The memory device has as an internal memory a static RAM 1 to which a battery 4 is connected through an internal power line 8 for supplying a power voltage, a reverse charge preventing diode 6 and a current limiting resistance 5. A power input line 7 is connected to the internal power line 8 through a power control circuit 3 and to a connector 35. A buffer circuit 2 is connected to the internal power line 8, the RAM 1 and the connector 35 being connected to each other by an address bus 10, a control bus 11 and a data bus 12 through the buffer circuit 2. The power control circuit 3 and the buffer circuit 2 are connected to each other by a control line 9. In the drawing, reference numeral 33 denotes a pull-up resistance connected between the internal power line 8 and the control bus 11. When the memory device having the above-mentioned configuration is used, it is mounted on terminal equipment (not shown) through the connector 35. If a power voltage of a value greater than a defined value is applied to the power input line 7, the power control circuit 3 causes the connection between the power input line 7 and the internal power line 8, as well as sending a high level control signal to the buffer circuit 2 over the control line 9. This operation causes the power voltage supplied to the RAM 1 and the buffer circuit 2 over the internal power line 8, and the high level control signal brings the buffer circuit 2 into an enable (operable) state. In other words, the terminal equipment can get access to the RAM 1, i.e, reading from or writing in the RAM 1, over the address bus 10, the control bus 11 and the data bus 12. During this operation, since the potential of the internal power line 8 is set to a value higher than the potential of the positive side of the battery 4, the current of the battery 4 is not consumed. When access to the RAM 1 is completed, and when a given power voltage is not applied to the power input line 7, the power control circuit 3 detects that the voltage value of the power input line 7 is less than the defined value and cuts off the connection between the power input line 7 and the internal power line 8, as well as sending a low level control signal to the buffer circuit 2 over the control line 9. The control signal brings the buffer circuit 2 into a disable (non-operating) state wherein any access to the RAM 1 is prohibited. In this state, although no power voltage is supplied to the RAM 1 through the power input line 7, the voltage of the battery 4 is supplied through the resistor 5 and the diode 6. Even if the memory device is removed from the terminal equipment, therefore, the data stored in the RAM 1 is not annihilated and is kept in the memory device. However, since the connection between the memory device and the terminal equipment is effected through the connector 35 having many contact points, when foreign substances adhere to the contact points, when a contact point is deformed or broken or when the memory device is attached to the terminal equipment at an angle, there is in some cases the occurrence of unstable or poor contact or error in the contact. Such a case involves the problem that, if writing to or reading from a given address area of the memory device is performed from the terminal equipment, there is the danger of producing a malfunction. In particularly, there is also the danger of annihilating the valuable data stored in the RAM 1. It is impossible to perfectly connect the connector 35 so as to accurately combine the memory device with the terminal equipment. JP 63 239572 discloses apparatus which is intended to detect an unconnected terminal on a memory card; to do this, use is made of a pull-up circuit for monitoring data transfer. SUMMARY OF THE INVENTION The present invention has been achieved with a view to resolving the above-mentioned problem, and it is an object of the present invention to provide a use of a contact confirmation/control circuit which is capable of preventing any malfunction causing trouble in the connection of a connector. According to the present invention there is provided a use of a contact confirmation/control circuit as set out in the appended claims. The contact confirmation/control circuit can be constructed by a full-address bus "L" coincidence circuit for detecting that all the bits of the address bus are in the "L" level, a full-address bus "H" coincidence circuit for detecting that all the bits of the address bus are in the "H" level, a first memory circuit for storing first known data and outputting it to the data bus by the AND output of the read control signal input from the terminal equipment and the detection signal from the full-address bus "L" coincidence circuit, and a second storage circuit for storing second known data and outputting it to the data bus by the AND output of the read control signal input from the terminal equipment and the detection signal from the full-address bus "H" coincidence circuit. The first storage circuit may be provided with a change means for changing the level of a given bit of the first known data when a write control signal is input from the terminal equipment over the control bus. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a drawing of the circuit of a portable semiconductor memory device for use in an embodiment of the present invention; Fig. 2 is a drawing of the circuit of the contact confirmation/control circuit for use in the embodiment; Fig. 3 is a drawing of the circuit of the "55 H " memory circuit in the contact confirmation/control circuit; Fig. 4 is a drawing of the circuit of the "AA H " memory circuit in the contact confirmation/control circuit; Fig. 5 is a flow chart which shows the operation of confirming contact; Fig. 6 is a drawing of the timing of a signal in each unit of the contact confirmation/control circuit; and Fig. 7 is a drawing of the circuit of a conventional portable semiconductor memory device. DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings. In Fig. 1, a portable semiconductor memory device A has as an internal memory a static RAM 1 to which a battery 4 is connected through an internal power line 8 for supplying a power voltage, a reverse charge preventing diode 6 and a current limiting resistance 5. A power input line 7 is connected to the internal power line 8 through a power control circuit 3 and to a connector 35. A buffer circuit 2 is also connected to the internal power line 8, and the RAM 1 is connected to the connector 35 by an address bus 10, a control bus 11 and a data bus 12 through the buffer circuit 2. The power control circuit 3 is connected to the buffer circuit 2 by a control line 9. In the drawing, reference numeral 33 denotes a pull-up resistance which is connected between the internal power line 8 and the control bus 11. A contact confirmation/control circuit 15 is connected to the address bus 10, the control bus 11 and the data bus 12. Specifically, each of the address bus 10 and the data bus 12 comprises a 8-bit bus, and the control bus 11 is formed by a write-enable signal line 13, a card-enable signal line 14 and an output-enable signal line 26. A test signal line 16 is also connected between the contact confirmation/control circuit 15 and the connector 35, and a pull-down resistance 22c is connected to the test signal line 16. The power input line 7 is connected to the contact confirmation/control circuit 15 for the purpose of supplying a power thereto. That is, in the memory device in this embodiment, the contact confirmation/control circuit 15 is connected to the address bus 10, the control bus 11 and the data bus 12 which are provided in the conventional memory device shown in Fig. 7, and the test signal line 16 is connected between the connector 35 and the contact confirmation/control circuit 15, the pull-down resistance 22c being connected to the test signal line 16. Fig.2 shows the internal configuration of the contact confirmation/control circuit 15. A full-address bus "L" coincidence circuit 17 and a full-address bus "H" coincidence circuit 18 are connected to the address bus 10, the output lines 23a and 23b of the coincidence circuits 17 and 18 being connected to the first input terminals of AND circuits 19a and 19b, respectively. The full-address bus "L" coincidence circuit 17 and the full-address bus "H" coincidence circuit 18 output "H" level detection signals to the output lines 23a and 23b when all the bits of the address bus 10 are in the "L" level and the "H" level, respectively. The card-enable signal line 14 is connected to the second input terminals of the AND circuits 19a and 19b through an inverter circuit 25c, and the test signal line 16 is connected to the third input terminals. The output terminals of the AND circuits 19a and 19b are respectively connected to the first input terminals of AND circuits 34a and 34b, and the output-enable signal line 26 is connected to the second input terminals of the AND circuits 34a ad 34b through an inverter circuit 25b. The output lines 24a and 24b of the AND circuits 34a and 34b are respectively connected to a "55 H " memory circuit 20 and an "AA H " memory circuit 21 which serve as first and second memory circuits, respectively. The output line 25d of the inverter circuit 25a connected to the AND circuit 34b and the write-enable signal line 13 are connected to the "55 H " memory circuit 20. The data bus 12 is connected to the "55 H " memory circuit 20 and the "AA H " memory circuit 21. In the drawing, reference numeral 22a and 22b respectively denote pull-down resistances connected to the output lines 24a and 24b of the AND circuits 34a and 34b, respectively. As shown in Fig. 3, the "55 H " memory circuit 20 comprises non-inverter circuits 27a to 27h which are respectively provided corresponding to 8 bits from a least significant bit LSB to a most significant bit MSB of the data bus 12, pull-up resistances 29a, 29c, 29e and 29g which are respectively connected to the non-inverter circuits 27a, 27c, 27e and 27g of the bits in odd numbers counted from the LSB, and a latch circuit 30 connected to the non-inverter circuit 27h of the MSB. The latch circuit 30 forms a change means in which a 5-V power source, the output line 25d of the inverter circuit 25a, the write-enable signal line 13 and the non-inverter circuit 27h are connected to the input terminal D, the (reset) terminal R, the input terminal T and the output terminal Q, respectively. The latch circuit 30 serves to latch-output to the output terminal Q the value of D input at the edge of rise of the input terminal T. When the power source is turned on, since the terminal R is in the "L" level for a moment owing to the action of the power resistance 31 connected to the terminal R and a reset capacitor 32, the Q output is in the "L" level. If the "H" level of 5-V potential and the "L" level which is the ground level are expressed by "1" and "0", respectively, in the manner of binary representation, therefore, the input of each of the non-inverter circuits 27a to 27h is as shown in Table 1, and "55 H " (first known data) is coded in the manner of hexadecimal representation. However, when a write-enable signal in the "H" level is input to the input terminal T of the latch circuit 30, the output terminal Q is in the "H" level. The MSB thus becomes "1", and "D5 H " is coded in the manner of hexadecimal representation, as shown in Table 2. When an "H" level signal is input from the output line 24a of the AND circuit 34a, therefore, the data indicating "55 H " or "D5 H " is output to the data but 12. On the other hand, as shown in Fig. 4, the "AA H " memory circuit 21 comprises non-inverter circuits 28a to 28h provided corresponding to 8 bits from the LSB to the MSB of the data bus 12, and pull-up resistances 29b, 29d, 29f and 29h which are connected to the non-inverter circuits 28b, 28d, 28f and 28h of the bits in even numbers counted from the LSB. The "AA H " (second known data) of the input to the non-inverter circuits 28a to 28h is coded in the manner of hexadecimal representation, as shown in Table 3. When an "H" level signal is input from the output line 24b of the AND circuit 34b, data indicating "AA H " in hexadecimal representation is output to the data bus 12. The operation of this embodiment will be described below. As shown in Fig. 1, the memory device A is mounted to a terminal equipment B through the connector 35. The terminal equipment B has the function of supplying a power voltage to the power input line 7 of the memory device A and confirming the connection of the connector 35 in accordance with the flow chart described below and shown in Fig. 5. In Step S1, the terminal equipment B first specifies the most significant address (all the bits are in the "H" level) in the address bus 10 while sending an "H" level test signal to the contact confirmation/control circuit 15 over the test signal line 16, as well as reading the most significant address by sending an "L" level control signal to each of the card-enable signal line 14 and the output-enable signal line 26 of the control bus 11. During this process, if the connector is accurately connected, in Fig. 2, since the full-address bus "H" coincidence circuit 18 outputs the the "H" level detection signal, all the first to third input terminals of the AND circuit 19b are in the "H" level, and both the first and second input terminals of the AND circuit 34b are in the "H" level. As a result, an "H" level signal is input to the "AA H " memory circuit 21, and the data indicating "AA H " is output to the data bus 12. Fig. 6 is a drawing which shows the timing of a signal in each unit of the contact confirmation/control circuit 15 during this process. In Step S2, the terminal equipment B then confirms that the data read is "AA H ", and if the data is not "AA H ", it is decided in Step S3 that a trouble occurs in the contact of the connector 35. The "H" level signal output to the output line 24b of the AND circuit 34b is inverted by the inverter circuit 25a and then input to the terminal R of the latch circuit 30 of the "55 H " memory circuit 20 so that the latch circuit 30 is reset, with the output terminal Q being in the "L" level. On the other hand, when it is confirmed that the data read in Step S2 is "AA H ", in Step S4, the terminal equipment B specifies again the least significant address (all the bits are in the "L" level) in the address bus 10 while sending an "H" level test signal to the contact confirmation/control circuit 15 over the test signal line 16, as well as reading the least significant address by sending an "L" level control signal to each of the cardenable signal line 14 and the output-enable signal line 26 of the control bus 11. During this process, if the connector is accurately connected, since the full-address bus "L" coincidence circuit 17 outputs an "H" level detection signal, all the first to third input terminals of the AND circuit 19a are in the "H" level, and both of the first and second input terminals of the AND circuit 34a are in the "H" level. As a result, the "H" level of signal is input to the "55 H " memory circuit 20, and the data indicating "55 H " is output to the data bus 12. During this process, since the output from the AND circuit 34b is in the "L" level, the output from the "AA H " memory circuit 21 is floating, and thus data does not collide therewith. In Step S5, the terminal equipment B confirms that the data read is "55 H ", and if the data is not "55 H ", it is decided in Step S3 that trouble occurs in the contact of the connector 35. On the other hand, it is confirmed that the data is "55 H ", in Step S6, pseudo writing is performed by outputting an "H" level pulses to the write-enable signal line 13. In other words, the Q output becomes the "H" level at the edge of rise of the write-enable signal which is input to the input terminal T of the latch circuit 30 of the "55 H " memory circuit 20 whereby "D5 H " is coded. In Step S7, the least significant address is then read in the same way as in Step S4. In Step S8, the terminal equipment B confirms that the read data is "D5 H ", and if the data is not "D5 H ", it is decided in Step S3 that trouble occurs in the contact of the connector 35. While if it is confirmed that the data is "D5 H ", it is decided in Step S9 that the connector 35 is accurately connected, and an access to the RAM 1 of the memory device A shown in Fig. 1 is started. Although the access to the RAM 1 is performed in the state wherein the test signal of the test signal line 16 is the "L" level, the access is the same as the access to the conventional memory device shown in Fig. 7 and is not described below. When trouble occurs in the contact of the connector 35, in Step S3, after the cause of the trouble in the contact has been removed, and the connector 35 has been connected again, the contact is confirmed again in accordance with the flow chart shown in Fig. 5. As described above, it is possible to confirm the "H" level state and the "L" level state of each of the bits of the address bus 10 and the data bus 12, as well as confirming the contact of each of the signal lines 13, 14 and 26 of the control bus 11 by reading and pseudo writing. When the RAM 1 of the memory device A is accessed, since the test signal is in the "L" level, the data does not collide therewith on the data bus 12. An address bus of more significant than the address bus required for accessing to the RAM 1 or an input/output port may be utilized as the test signal line 16 in place of the use of an independent signal line as the test signal line 16. The full-address bus "L" coincidence circuit 17 and the full-address bus "H" coincidence circuit 18 can be easily constructed by using OR circuits, NOR circuits, AND circuits, digital comparators or the like. Although the data bus 12 comprises 8 bits, even if it comprises 16 bits or other bits, the same memory device can be formed. The contact confirmation/control circuit 15 may be constructed by using general IC or dedicated IC or may be incorporated in dedicated IC together with the buffer circuit 2. The first and second known data are not limited to "55 H " and "AA H ", other data may be used. The internal memory may be a semiconductor memory other than the static RAM 1. When a nonvolatile memory is used as the internal memory, the battery 4, the current limiting resistance 5 and the reverse charge preventing diode 6 which are provided for keeping the data stored are not required

Claims: Use of a contact confirmation/control circuit (15), which is connected to an address bus (10), a control bus (11) and a data bus (12) of a portable semiconductor memory device (A), which memory device also comprises an internal memory (1), connected to the address bus (10), the control bus (11) and the data bus (12), for storing data and a connector (35) for electrically connecting the said address bus (10), the said control bus (11) and the said data bus (12) to terminal equipment (B); the said use being use for confirming proper connection between the confirmation/control circuit (15) and the terminal equipment (B) by outputting known data previously stored in the confirmation/control circuit (15) to the said data bus (12) when a read control signal is input from the terminal equipment (B) over the said control bus (11) and when a given address is specified on the said address bus (10). Use of a contact/control circuit according to Claim 1, wherein said contact confirmation/control circuit (15) comprises a full-address bus "L" coincidence circuit (17) for detecting that all the bits of said address bus are in the "L" level, a full-address bus "H" coincidence circuit (18) for detecting that all the bits of said address bus are in the "H" level, a first memory circuit (20) for storing first known data and outputting said first known data to said data bus (12) by an AND output of said read control signal input from said terminal equipment (B) and the detection signal of said full-address bus "L" coincidence circuit (17), and a second memory circuit (21) for storing second known data and outputting said second known data to said data bus (12) by an AND output of said read control signal input from said terminal equipment (B) and the detection signal of said full-address bus "H" coincidence circuit (18). Use of a contact confirmation control circuit according to Claim 2, wherein said confirmation/control circuit further comprises a change means (31) which is provided in said first memory circuit (20) for the purpose of changing the level of a given bit of said first known data when a write control signal is input from said terminal equipment (B) over said control bus (11). Use of a contact confirmation/control circuit according to Claim 1, wherein said internal memory (1) is a volatile memory.

Inventors: KIMURA MASATOSHI C O KITAITAMI, KIMURA, MASATOSHI C/O KITAITAMI SEISAKUSHO OF
Applicants: MITSUBISHI ELECTRIC CORP, MITSUBISHI DENKI KABUSHIKI KAISHA
Application year: 1990
Main classification: G11C5
IPC codes: G06F1, G06F11, G06F12, G11C5, G06K19