X-ray exposure apparatus

Abstract: An X-ray exposure apparatus includes an X-ray source; and a directing optical system for directing an X-ray beam from the X-ray source to a surface to be exposed, the directing optical system including a mirror having a reflection surface of a curvature radius R with respect to a predetermined sectional plane, for reflecting the X-ray beam and for expanding the diameter thereof with respect to the sectional plane; wherein the mirror satisfies the following conditions: R = (2d₁d₂σ′)/{[Δ-(d₁+d₂)σ′]·α} where d₁: the distance from the emission point of the X-ray source to the center of effective X-ray beam diameter on the reflection surface; d₂: the distance from the center of effective X-­ ray beam diameter on the reflection surface to the center of effective X-ray beam diameter on the surface to be exposed; α: the angle defined at the center of effective X-ray beam diameter on the reflection surface, between the X-ray beam and the reflection surface; σ′: a standard deviation of a distribution of intensities of the rays having different emission angles at the sectional plane, at the gravity center wavelength of the X-ray beam from the X-ray source; Δ: 0.43a≦ Δ ≦4.0a; and a : the length of the surface to be exposed, with respect to the sectional plane.

Description: FIELD OF THE INVENTION AND RELATED ART This invention relates to an exposure apparatus using X-rays and, more particularly, to an X-ray exposure apparatus wherein an X-ray beam from a radiation source such as a synchrotron orbit radiation source (SOR source), for example, is made divergent and thus is expanded for exposure of a surface to be exposed. SOR source is a radiation source which emits sheet-like electromagnetic waves (X-rays and the like) having a large divergent angle in a horizontal direction but having a small divergent angle in a vertical direction. Because of small divergent angle in the vertical direction, if an X-ray beam from the SOR source is projected directly to a surface to be exposed, only a limited range of the surface with respect to the vertical direction can be illuminated. For this reason, in an X-ray exposure apparatus which uses a SOR source, it is necessary to take some measure for expanding the X-ray beam emitted from the SOR source in the vertical direction. As an example, a method has been proposed by R.P. Haelbick et al, "J. of Vac. Sci. Technol." B1(4), Oct. - Dec., 1983, pages 1262 - 1266, according to which a mirror is disposed between a SOR source and a surface to be exposed and the mirror is oscillated with an angle of a few miliradians to scan the whole surface to be exposed, with a slit-like X-ray beam from the SOR source. With this method, however, at a moment only a part of the surface to be exposed can be irradiated with the X-rays. This results in a possibility of local expansion of the surface to be exposed (e.g. a mask) which leads to distortion of a pattern of the mask to be transferred and thus causes a transfer error. Although such a problem may be solved if the period of oscillation of the mirror is made sufficiently short, in order to assure this it is necessary to use a large drive power. This is inconvenient. As another example of expanding the X-ray beam in the vertical direction, a method has been proposed by Warren D. Grobman, "Handbook on Synchrotron Radiation", Vol. 1, Chapter 13, page 1135, North-Holland Publishing Co., 1983, according to which a convex mirror is disposed between a SOR source and a surface to be exposed, so that with the reflection by the convex surface of the mirror the angle of divergence of the X-ray beam in the vertical direction is expanded. This method is free from the problem of local distortion of the pattern as described hereinbefore. However, there is another problem. That is, of the X-ray beam emitted from a SOR source, in a horizontal orbit plane (horizontal section), the X-rays having different emission angles have an intensity distribution which can be considered substantially uniform. However, in a plane (vertical section) perpendicular to the orbit plane, they have an intensity distribution like a Gaussian distribution. This means that there is a difference in intensity between a central part and a peripheral part of the X-ray beam. Therefore, if the X-ray beam is used for the exposure as it is, non-uniform exposure results. Thus, it can not properly be used in an exposure apparatus. SUMMARY OF THE INVENTION It is accordingly an object of the present invention to provide an X-ray exposure apparatus resulting in an improved uniformity in the X-ray intensity distribution at an exposed surface. In accordance with an aspect of the present invention, to achieve the above object, there is provided an X-ray exposure apparatus, comprising: an X-ray source; directing means for directing an X-ray beam from said X-ray source to a surface to be exposed, said directing means including a stationary mirror having a reflection surface of a curvature radius R with respect to a predetermined sectional plane, for reflecting the respect to said sectional plane; and placing means arranged to place the surface to be exposed at a predetermined distance from said mirror, characterised in that: said mirror (2) satisfies the following condition: R = (2d 1 d 2 σ')/{[Δ-(d 1 +d 2 )σ'].α} where d₁: the distance from the emission point of said X-ray source to the centre of effective X-ray beam diameter on said reflection surface; d₂: the distance from the centre of effective X-ray beam diameter on said reflection surface to the centre of effective X-ray beam diameter on the surface to be exposed; α: the angle defined at the centre of effective X-ray beam diameter on said reflection surface, between the X-ray beam and said reflection surface; σ': a standard deviation of a distribution of intensities of the rays having different emission angles at said sectional plane, at the gravity centre wavelength of the X-ray beam from said X-ray source; Δ: 0.43a≤Δ≤4.0a; and a : the length of the surface to be exposed, with respect to said sectional plane. In this Specification, the gravity centre wavelength of an X-ray beam from an X-ray source means λ ₀ which is given by the following equation: where λ is the wavelength, e(λ) is the energy of the X-ray beam at the wavelength λ, and λ₁ and λ₂ are lower and upper limits of the wavelength region used for the exposure. In an X-ray exposure apparatus according to one preferred form of the present invention, the mirror of said directing means is set so as to satisfy the following condition: R = (2d 1 ·d 2 )/{[Δ'-(d 1 +d 2 )]·α} where 4.3x10²a≤ Δ' ≤4.0x10⁴a. The reflection surface of a mirror usable in the present invention may have a well-known structure effective to reflect X-rays with a good efficiency. For example, it may have a multilayered film structure. The present invention can be applied effectively to an exposure apparatus for manufacture of semiconductor devices, for example, wherein the exposure is performed with X-rays from a SOR source. This is because: With the present invention, it is possible to reduce the non-uniformness in the intensity distribution of an X-ray beam from a SOR source. It is therefore possible to illuminate a mask having a semiconductor circuit pattern with X-rays of a desirable intensity distribution. As a result, the semiconductor circuit pattern of the mask can be transferred to a wafer very accurately. It is to be noted here that the present invention is applicable to various types of exposure apparatuses such as, for example, a contact type exposure apparatus wherein a mask is contacted to a wafer, a proximity type exposure apparatus wherein a mask is spaced from a wafer through a distance of a few nm to a few tens of nm, and a projection type exposure apparatus wherein a pattern of a mask is projected to a wafer through a projection system including mirrors. These and other objects, features and advantages of the present invention will become more apparent upon a consideration of the following description of the preferred embodiments of the present invention taken in conjunction with the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS Figures 1A and 1B are schematic views of an X-ray exposure apparatus according to an embodiment of the present invention. Figure 2 is a vertical section of an illumination system used in the exposure apparatus shown in Figures 1A and 1B. Figure 3 is a schematic illustration, for explaining the paraxial relation of the mirror shown in Figures 1A and 1B. Figures 4 and 5 are graphs, each showing the relationship of the non-uniformness in exposure or the ratio of used light quantity, with respect to a/Δ. Figure 6 is a graph showing an X-ray intensity distribution upon a surface to be exposed, in accordance with numerical examples of the present invention. Figure 7 is a graph showing a comparative example. DESCRIPTION OF THE PREFERRED EMBODIMENTS Figures 1A and 1B are schematic views, respectively, showing an X-ray exposure apparatus according to an embodiment of the present invention. In Figure 1A the apparatus includes an X-ray directing means 20, and in Figure 1B one component of the directing means 20 is illustrated in detail. In Figures 1A and 1B, denoted at 1 is an emission point of a SOR source 10; at 2 is a cylindrical mirror having a convex surface, which is one component of the directing means 20; at 3 is a mask; and at 4 is a semiconductor wafer. In this embodiment, the SOR source 10 and the directing means 20 cooperate to provide an illumination system. The mask 3 has a semiconductor circuit pattern formed thereon, which pattern is at the surface 3a to be exposed. In a zone at the peripheral part of this surface 3a, one or more alignment marks are formed. The mask 3 is supported by a mask stage 30. On the other hand, the wafer 4 has a surface which is coated with a resist, and the wafer 4 is placed on a wafer stage 40. Each of the mask stage 30 and the wafer stage 40 is movable vertically and horizontally as viewed in Figure 1A, as well as in a direction perpendicular to the sheet of the drawing. With the displacement of the stages 30 and 40, the mask 3 and the wafer 4 can be aligned into a predetermined positional relationship. The apparatus of the present embodiment is an exposure apparatus of proximity type. In the present embodiment, an X-ray beam emitted from the emission point 1 of the SOR source 10 is received by the directing means 20 which serves to adjust the sectional shape of the received X-ray beam and to correct the intensity distribution thereof. The directing means 20 directs the X-ray beam to the mask 3 and irradiates the pattern 3a of the mask 3 with this X-ray beam. Then, the X-ray beam is projected to the wafer 4 through the mask 3, by which the pattern of the mask 3 is transferred to the resist on the wafer 4. The mirror 2 of the directing means 20 serves to expand the diameter of the X-ray beam, obliquely incident on the reflection surface thereof, with respect to a sectional plane perpendicular to the generating line of the mirror 2. Also, the mirror 2 serves to reduce non-uniformness in intensity distribution of the X-ray beam on the mask 3 surface. Further, the mirror 2 is disposed so that its generating line extends substantially in parallel to the horizontal orbit plane of the SOR source 10. While in Figure 1B only the mirror 2 is illustrated as a component of the directing means 20, actually the directing means 20 include some other components. Examples are: a beryllium (Be) window provided to shield the inside of the exposure apparatus against the outside atmosphere to allow that the inside of the apparatus is maintained at a vacuum or it is filled with an He gas; a stop member for determining the size of the X-ray beam in accordance with the size of the pattern 3a region of the mask 3; a shutter mechanism for controlling the amount of exposure by the X-ray beam. Figure 2 is a sectional view of the illumination system shown in Figures 1A and 1B, taken on a plane including the optical axis thereof and along the vertical direction (direction y a ), as viewed in Figure 1B. Like numerals as in Figures 1A and 1B are assigned to the elements corresponding to those of Figures 1A and 1B. In Figure 2, denoted at d₁ is the distance from the emission point 1 of the SOR source 10 to the center of effective X-ray beam diameter on the reflection surface of the mirror 2; at d₂ is the distance from the center of effective X-ray beam diameter on the reflection surface of the mirror 2 to the mask 3; at R is the radius of curvature of the mirror 2 in a sectional plane perpendicular to the generating line of the mirror; at α is the angle defined at the center of effective X-ray beam diameter on the reflection surface of the mirror 2, between the reflection surface and the X-ray beam projected thereto from the SOR source 10; at σ′ is a standard deviation (angle: rad) of a distribution of intensities of X-rays from the SOR source 10, having different emission angle, in a sectional plane perpendicular to the generating line of the mirror 2 and including the center 1a of the effective diameter, at the gravity center wavelength of the X-ray beam in the used wavelength region. Here, in a sectional plane (x a -y a plane) perpendicular to the horizontal orbit plane of the SOR source 10 (x a -z a plane in Figure 1B), the rays of the X-ray beam from the SOR source 10 having different emission angles have a distribution of intensity which is usually in the form of a Gaussian distribution. In Figures 1A, 1B and 2, the X-ray beam emitted from the emission point 1 of the SOR source 10 goes along a path in the neighborhood of a plane parallel to the horizontal orbit plane of the SOR source 10, and impinges on the convex mirror 2 having a cylindrical shape. Since the mirror 2 has a curvature with respect to the plane of vertical section (x a -y a plane), it serves to reflect the received X-ray beam so as to expand the angle of divergence of the X-ray beam in the vertical direction (y a direction). As a result, on the mask 3 surface, an X-ray beam expanded sufficiently in the vertical direction, is obtainable. Further, in the present embodiment, the mirror 2 is structured so as to satisfy equations to be set forth below, to thereby reduce the non-uniformness in intensity distribution (Gaussian distribution) of the X-ray beam on the mask 3 surface, with respect to the vertical (y a ) direction. R = (2d 1 d 2 σ′)/{[Δ-(d 1 +d 2 )σ′]·α} where d₁: the distance from the emission point of said X-ray source to the centre of effective X-ray beam diameter on said reflection surface; d₂: the distance from the centre of effective X-ray beam diameter on said reflection surface to the center of effective X-ray beam diameter on the surface to be exposed; α: the angle defined at the centre of effective X-ray beam diameter on said reflection surface, between the X-ray beam and said reflection surface; σ′: a standard deviation of a distribution of intensities of the X-rays having different angles of emission from said X-ray source, in a sectional plane perpendicular to a generating line of said mirror, at the gravity center wavelength of the X-ray beam from said X-ray source; Δ: 0.43a≤ Δ ≤4.0a and a : the length of the surface to be exposed, with respect to a direction which is substantially perpendicular to the generating line of said mirror. R = (2d 1 ·d 2 )/{[Δ'-(d 1 +d 2 )]·α} where 4.3x10 2 a≤ Δ ≤4.0x10 4 a Next, description will be made of the significance and the derivation of equations (1-1), (1-2), (2-1) and (2-2) that determine an appropriate curvature radius R of the cylindrical convex mirror 2. First, the focal length f of the mirror 2 in the sectional plane (x a -y a plane) perpendicular to the generating line of the mirror 2 is given by: f = -Rsinα/2 ≃ -Rα/2 where R > 0, α > 0 and f < 0 Approximating the mirror 2 as a thin lens, examination will now be made as to the degree of expansion, on the mask 3 surface, of the paraxial rays emitted from an object point on the axis (SOR emission point 1). Figure 3 illustrates the paraxial relation of the thin lens. In this Figure, denoted at 1' is the centre position of the emission point 1 of the SOR source 10; at 2' is a thin lens which is an approximation of the mirror; at 3' is a surface that corresponds to the mask 3; at  is the refracting power (= 1/f) of the thin lens (i.e. the mirror); d₁ is the distance from the emission point centre position 1' to the thin lens 2'; at d₂ is the distance from the thin lens 2' to the surface 3'; at u₁ and u₂ are half angles of divergence of the X-ray beams just emitted from the emission point centre position 1' and the thin lens 2', respectively; at h₁ and h₂ are the radii (heights of incidence) of the X-ray beams, in the y a direction, incident on the thin lens 2' and the surface 3', respectively. The signs are such as those illustrated in the drawing. From the paraxial relationship, the following relations are established: h 1 = -d 1 · u 1 u 2 = u 1 + h 1 ψ h 2 = h 1 - d 2 u 2 By erasing h₁ and u₂ in equations (4) - (6), h₂ is expressed as follows: h 2 = -u 1 (d 1 +d 2 ) + d 1 d 2 u 1 ψ Further, by substituting the relation of equation (3) into equation (7), then h 2 = -u 1 (d 1 +d 2 ) - 2u 1 d 1 d 2 /Rα This is the paraxial relation that represents the expansion of the X-ray beam upon the surface 3', in the vertical (y a ) direction. Accordingly, if a standard deviation of a distribution of intensities of the rays having different emission angles, in the vertical direction, at the gravity centre wavelength in the used wavelength region of the X-ray beam is denoted by σ' (> 0), the height (radius) h'₂ from the optical axis and on the surface 3' of the X-ray beam as emitted from the centre position 1' at an angle substantially corresponding to this standard deviation σ', can be determined by substituting u₁ = -σ' into equation (8), as follows: h' 2 = σ'(d 1 +d 2 ) + 2σ'd 1 d 2 /Rα By taking the height h'₂ in equation (9) as an effective radius Δ and by solving the equation with respect to R, then equation (1-1) is obtained. Also, as will be understood from the foregoing description, equation (1-2) is the one that defines the range for the position of the X-ray beam that determines the standard deviation. With smaller Δ, a beam of a small expansion is obtainable, and with larger Δ, a beam of large expansion is obtainable. Next, the range of the value Δ suitable for the exposure will be explained. Figure 4 is a graph showing the relationship between (i) a/Δ (the ratio of the length a (exposure area) of the surface 3a, to be exposed, in the y a direction, to the effective radius Δ of the X-ray beam on the surface 3' in the y a direction) in an occasion where, in the x a -y a plane, the rays of the X-ray beam having different emission angles have a distribution of intensity which is a Gaussian distribution, and (ii) the non-uniformness on the surface 3a, to be exposed, in the y a direction (i.e. the value of "(maximum exposure strength - minimum exposure strength)/maximum exposure strength)" on the surface 3a to be exposed, with respect to the y a direction). Here, it is assumed that there is no variation in intensity (i.e. non-uniformness in exposure) with respect to the z a direction. It is seen from this graph that, in order to maintain the non-uniformness in exposure not higher than 50 %, it is necessary to keep the ratio a/Δ within a range not greater than about 2.3. In other words, unless Δ is made not less than about 0.43a, the magnitude of the difference between the maximum exposure strength and the minimum exposure strength on the surface 3a to be exposed (exposure area), with respect to the maximum exposure strength, is reduced to a half or less. As a result, large non-uniformness in exposure is produced on the surface 3a to be exposed, which is not proper for use in an exposure apparatus. Figure 5 is a graph showing the relationship between (i) the ratio a/Δ as described which is under the same condition as Figure 4, and (ii) the ratio of used light quantity (the ratio of the amount of exposure on the surface 3′ to the total quantity of the X-ray beam emitted from the light source). Here, it is assumed that the length of the surface 3a to be exposed, in the z a direction is substantially equal to the width of the X-ray beam in the z a direction and that it is unchangeable. In other words, this graph is one that shows to what extent the X-ray beam from the SOR source is effectively used in exposure, in dependence upon the value a/Δ. If, in this graph, the ratio of used light quantity is less than 1/10, the efficiency is too low for use in an exposure apparatus. It is seen from this graph that, in order to make the ratio of used light quantity not less than 1/10, it is necessary to keep a/Δ not less than 0.25. Namely, Δ ≤ 4a is the condition for an X-ray exposure apparatus. As will be understood from the foregoing, the condition for Δ in an X-ray exposure apparatus is determined, in consideration of the length a of the surface 3a, to be exposed, with respect to the X-ray beam expanding direction (y a direction in Figure 1), as depicted by equation (1-2), and it is determined as follows: 0.43a ≦ Δ ≦ 4.0a Accordingly, as showed by equation (1-1), the radius of curvature of the mirror 2 is expressed as follows: R = (2d 1 ·d 2 ·σ')/{[Δ-(d 1 +d 2 )·σ']·α} where 0.43a≤ Δ ≤4.0a Namely, the condition is (2d 1 ·d 2 ·σ')/{[4.0a-(d 1 +d 2 )·σ']·α}≤ R ≤ (2d 1 ·d 1 ·σ')/{[0.43a-(d 1 +d 2 )·σ']·α} On the other hand, if Δ' = Δ/σ', as showed by equation (2-1), equation (1-1) can be rewritten as follows: R = (2d 1 ·d 2 )/{[Δ'-(d 1 +d 2 )]·α} where Δ' = Δ/σ' Generally, in a SOR light source, the value σ' is in the range of 0.1x10 -3 ≤ σ' ≤ 1.0x10 -3 (rad) Therefore, from equations (1-2) and (11), as showed by equation (2-2), the following relation is obtained: 4.3x10 2 a ≤ Δ' ≤ 4.0x10 4 a Thus, equations (2-1) and (2-2) can be rewritten as follows: R = (2d 1 ·d 2 )/{[Δ'-(d 1 +d 2 )]·α} 4.3x10 2 a≤ Δ' ≤4x10 4 a From these equations, the following relation is determined: (2d 1 ·d 1 )/{[4.0x10 4 a-(d 1 +d 2 )]·α} ≤ R ≤ (2d 1 ·d 2 )/{[4.3x10 2 a-(d 1 +d 2 )]·α} Examples will now be described in detail. The parameters in equation (1-1) were set as follows: d 1 = 5000 (mm) d 2 = 5000 (mm) σ' = 5.0x10 -4 (rad) α = 1.0x10 -2 (rad) a = 30 (mm) By setting the parameters in this manner, from equation (10) the following relation is obtained: 2.2x10 4 ≤ R ≤ 3.2x10 5 (unit: mm) With the parameters set in accordance with the above-described conditions, the relationship between the surface 3′ to be exposed (exposure area) and the X-ray exposure strength was examined by using cylindrical convex mirrors of R = 250 m (Δ = a/2), R = 100 m (Δ = a) and R = 45.5 m (Δ = 2a), respectively. The results are illustrated in Figure 6. In this Figure, the axis of abscissa depicts the position in the y a direction with the origin being at the centre of the surface 3′ to be exposed, while the axis of ordinate depicts the X-ray intensity at each point (relative value of the X-ray intensity at each point, relative to the value of the intensity of the X-ray beam emitted from the cylindrical convex mirror as integrated with respect to the area on the surface 3′ to be exposed). As a comparative example, Figure 7 shows a graph of the X-ray intensity distribution which was obtained in a similar manner as in Figure 6, but with use of a cylindrical convex mirror of R = 8.5 m (Δ = 10a) and a mirror R = ∞ (Δ = a/6), namely, a flat mirror, which were out of the range of the curvature radius as determined in accordance with the present invention. As will be understood from these Figures, if R is within the range as defined in accordance with the present invention, the non-uniformness in exposure can be kept within a tolerable range (the light quantity at the peripheral portion is not less than a half of that of the central portion). Also, the proportion of the quantity of used light to the total quantity is not too small. With the X-ray exposure apparatus of the present embodiment, as described hereinbefore, the whole surface to be exposed can be exposed at a time. This avoids the possibility of local thermal distortion of the mask due to displacement of the X-ray beam. Further, the apparatus includes a mirror having a radius of curvature which is suitable for ensuring the amount of exposure as required in a practical exposure apparatus, and also which is effective to reduce the non-uniformness in intensity distribution of the X-ray beam. Therefore, the present invention is effective to make it easier to provide a practical X-ray exposure apparatus. While the invention has been described with reference to the structure disclosed herein, it is not confined to the details set forth and this application is intended to cover such modifications or changes as may come within the invention as defined in the appended claims.

Claims: An X-ray exposure apparatus, comprising: an X-ray source (10); directing means (20) for directing an X-ray beam from said X-ray source (10) to a surface (3a) to be exposed, said directing means (20) including a stationary mirror (2) having a reflection surface of a curvature radius R with respect to a predetermined sectional plane, for reflecting the X-ray beam and for expanding the diameter thereof with respect to said sectional plane; and placing means (30) arranged to place the surface (3a) to be exposed at a predetermined distance from said mirror (2), characterised in that: said mirror (2) satisfies the following condition: R = (2d 1 d 2 σ')/{[Δ-(d 1 +d 2 )σ'].α } where d₁: the distance from the emission point (1) of said X-ray source (10) to the centre of effective X-ray beam diameter on said reflection surface; d₂: the distance from the centre of effective X-ray beam diameter on said reflection surface to the centre of effective X-ray beam diameter on the surface (3a) to be exposed; α: the angle defined at the centre of effective X-ray beam diameter on said reflection surface, between the X-ray beam and said reflection surface; σ': a standard deviation of a distribution of intensities of the rays having different emission angles at said sectional plane, at the gravity centre wavelength of the X-ray beam from said X-ray source; Δ : 0.43a≤Δ≤4.0a; and a : the length of the surface (3a) to be exposed, with respect to said sectional plane. An apparatus according to claim 1, wherein said reflection surface comprises a substantially cylindrical convex surface having a generating line, and wherein said mirror (2) is provided so that the generating line of said convex surface intersects said sectional plane perpendicularly. An apparatus according to either of claims 1 or 2, wherein said X-ray source (10) comprises a synchrotron orbit radiation source. An apparatus according to claim 3 as dependent on claim 2, wherein said mirror (2) is provided so that the generating line extends substantially in parallel to a horizontal orbit plane of said synchrotron orbit radiation source (10). An apparatus according to claim 4, wherein said placing means (30) comprises means (30) for supporting a mask (3) having a pattern to be set as the surface (3a) to be exposed, and said apparatus further comprises means (40) for supporting a wafer (4) to which the pattern of the mask (3) is to be transferred using the X-ray beam. An apparatus according to any one of the preceding claims wherein said mirror (2) further satisfies the following conditions: R = (2d 1 .d 2 )/{[Δ'-(d 1 +d 2 )].α} where 4.3x10 2 a≤ Δ' ≤4.0x10 4 a. A method of X-ray exposure in which an X-ray beam from an X-ray source (10) is expanded in a direction in a predetermined sectional plane by a stationary mirror (2) having a reflection surface of curvature radius R with respect to said sectional plane, and directed onto a surface (3a) to be exposed, characterised in that said curvature radius R, relative positioning of said X-ray source (10), mirror (2), and surface (3a) and length of surface (3a) to be exposed are related by the following condition:- R = (2d 1 d 2 σ')/{[Δ-(d 1 +d 2 )σ'].α} where d₁: the distance from the emission point (1) of said X-ray source (10) to the centre of effective X-ray beam diameter on said reflection surface; d₂: the distance from the centre of effective X-ray beam diameter on said reflection surface to the centre of effective X-ray beam diameter on the surface (3a) to be exposed; α: the angle defined at the centre of effective X-ray beam diameter on said reflection surface, between the X-ray beam and said reflection surface; σ': a standard deviation of a distribution of intensities of the rays having different emission angles at said sectional plane, at the gravity centre wavelength of the X-ray beam from said X-ray source; Δ: 0.43a≤Δ≤4.0a; and a : the length of the surface (3a) to be exposed, with respect to said sectional plane. A method of producing a semiconductor circuit in which a pattern of a semiconductor circuit is transferred from a mask to a wafer by X-ray exposure using the method of claim 7.

Inventors: SUZUKI MASAYUKI, UNO SHINICHIRO, SUZUKI, MASAYUKI, UNO, SHINICHIRO
Applicants: CANON KK, CANON KABUSHIKI KAISHA
Application year: 1990
Main classification: G03F7
IPC codes: G21K5, G03F7, G03F1, H01L21, G21K1