TETRAAZA LIGAND SYSTEMS AS COMPLEXING AGENTS FOR ELECTROLESS DEPOSITION OF COPPER

Abstract: An electroless copper plating bath uses a series of tetradentate nitrogen ligands. The components of the bath may be substituted without extensive re­ optimization of the bath. The Cu-tetraaza ligand baths operates over a pH range between 7 and 12. Stable bath formulations employing various buffers, reducing agents and ligands have been developed. The process can be used for metal deposition at lower pH and provides the capability to use additive processing for metallization in the presence of polyimide, positive photoresist and other alkali sensitive substrates.

Description: This invention relates to electroless copper plating baths and more specifically relates to electroless copper bath using neutral ligands based on nitrogen to metal bonds. Electroless copper plating is widely practiced in the electronics industry, particularly for plating through holes of printed circuit boards by the superior additive process. The current practice of electroless copper plating involves the use of formaldehyde as a reducing agent. Formaldehyde generally requires the operation of the plating bath at a highly alkaline pH, greater than approximately 11. The high pH requirement limits the application of additive copper plating in the presence of alkali sensitive substrates such as polyimide and positive photoresists and possibly ceramic substrates such as aluminum nitride. In U.S. Patent No. 4,818,286, filed by the same inventors and assignees as the present invention, entitled "Electroless Copper Plating Bath" there is described a plating bath arrangement obviating the requirement of formaldehyde and operating at lower pH. From Metal Finishing Abstracts, Vol. 27, No. 1, January - February 1985, abstract J, pages 14-15, Teddington, Middle-sex, GB & SU-A-1,109,470 an electroless Cu coating solution containing 0.01-1.0 % Cu salt, 0.01-1.0 % NaOH, 0.04-0.5 % salt of octahydridoborate of complex matching agent taken from the group comprising: trilon B, glycine or alphatic tetramine, e.g. 1,5,8,12-tetraazadodecane or 1,4,8,11-tetraazaundecane, increasing the Cu deposition rate, is known. In the present invention a novel systems approach is applied to electroless plating. Using the approach, the same metal-ligand system is used in a wide variety of buffer systems to formulate stable bath compositions providing acceptable plating performance under varying operating conditions. Such versatility is not possible using existing electroless processes including copper-formaldehyde as described in the article entitled "Electroless Copper Plating Using Dimethylamine Borane" by F. Pearlstein and R.F. Weightman, Plating , May 1973, pages 474-476. A principal object of the present invention is the provision of an electroless plating bath based on a series of tetradentate nitrogen ligands. Another object of the invention is the provision of an electroless plating bath the components of which are capable of being substituted without extensive reoptimization of the bath. A further object of the invention is the provision of a Cu-tetraaza ligand electroless plating bath which is useable over a wide range of pH, especially at a low pH in the range between 7 and 12. In the present invention an electroless copper plating bath comprises a complexing system based upon copper-tetraaza ligand chemistry, a buffer system, a reducing agent and additives for long term stability and desirable metallurgy. For copper deposition a quantity of tetraaza ligands such as triethylenetetraamine, 1,5,8,12 tetraazadodecane, 1,4,8,11 tetraazaundecane, 1,4,8,12 tetraazacyclopentadecane and 1,4,8,11 tetrazacyclotetradecane, amine borane additives, and buffers resulting in a bath having a pH in the range of approximately 7 to 12 can be successfully used. The advantage of the systems approach is that any one of the components of the plating bath can be changed without significantly adversely affecting the bath performance and hence without requiring excessive re-optimization of the bath. Therefore, the changes of the operating condition of the plating bath can be made dependent solely upon the substrate requirements. By means of a suitable choice of the system components, bath compositions for a given application can be easily formulated. The concept has been demonstrated for Cu-tetraaza ligand systems over a wide pH range of 7 to 12. Stable bath formulations employing various buffers, reducing agents and ligands have been developed. Plating rates of 1 to 4 microns per hour have been achieved using the various compositions in the aforementioned pH range. Operation at temperatures in the range from approximately 45 °C to 70 °C has also been achieved. Resistivity measurements in the range between 1.9 to 2.4 microohm cm have been measured, which values are comparable to those obtained with the conventional formaldehyde process. The versatility of the process provides the flexibility in application over a wide range of operating conditions, e.g. pH and temperature. The bath can be used for metal deposition at lower pH and for providing an opportunity to use additive processing for metallization in the presence of polyimide, positive photoresists and other alkali sensitive materials. The invention will become more clearly apparent when the following description is read in conjunction with the accompanying drawings. Figures 1A through 1E are chemical structural diagrams of preferred tetraaza ligands used in practicing the present invention; Figure 2 is a graphical representation of the effect of copper concentration on plating rate, and Figure 3 is a graphic representation of the effect of DMAB concentration on the plating rate at several different temperatures. An electroless metal deposition process is essentially an electron transfer process mediated by a catalytic surface. The heterogeneous catalytic process involves the acceptance of electrons from a reducing agent by the catalytic surface. The electrons can be used to reduce the metal ions in solution, resulting in metal deposition on the surface. The electroless plating bath formulation is optimized to enhance the heterogeneous electron transfer process while minimizing the homogeneous reaction between a reducing agent and a metal ion in solution. Such a situation is critical for the successful continuous operation of the electroless bath. Meeting the criteria enables patterned metal deposition on catalytically activated areas of a substrate and building fine line circuitry needed in modern high level computer packages. The successful operation of an electroless copper bath therefore, depends upon the reducing agent and the complexing agent for copper ions in solution. There are three reducing agents in wide use for electroless metal deposition. The reducing agents are formaldehyde, hypophosphite and the amine boranes. Formaldehyde is an effective reagent only at pH above 11 and is generally ineffective for electroless plating at lower pH. Hypophosphite has been extensively used for electroless Ni-P and Co-P plating at a wide range of pH. However, hypophosphite is a poor reducing agent for electroless copper plating. Systems using hypophosphite generally are limited to deposition of up to one micron of copper. The preferred reducing agent appears to be amine boranes. Dimethylamine borane (DMAB) is the preferred reducing agent because of its high solubility in water and ready availability. Other amine boranes, where the amine component is morpholine, t-butyl, isopropyl or the like, are equally useful in practicing the present invention. The copper ion is introduced by a copper salt such as copper sulfate, acetate, nitrate, fluoroborate and the like. The choice of a suitable complexing agents for copper ions in solution is critical for the stable and successful operation of the electroless plating bath. Stable complex formulation reduces the possibility of homogeneous copper deposition and increases the overall stability of the electroless bath which is essential for long term operation of the bath. The ligand used in this invention form tetra-dentate complexes with copper which have high stability constants with logK values greater than 20. Preferred examples of tetraaza ligands are illustrated in Figures 1A through 1E. Figure 1A shows the chemical structural diagram for triethylenetetraamine. Figure 1B shows the chemical structural diagrams for 1,5,8,12 tetraazadodecane. Figure 1C shows the chemical structural diagram for 1,4,8,12 tetraazacyclopentadecane. Figure 1D shows the chemical structural diagram for 1,4,8,11 tetraazaundecane, and Figure 1E shows the chemical structural diagram for 1,4,8,11 tetraazacyclotetradecane. The preferred ligand is 1,5,8,12 tetraazadodecane which is also known as 1,2bis(3-aminopropylamino)ethane or N,N'bis-(aminopropyl)ethylenediamine. These tetradentate neutral ligands differ from the multidentate anionic ligands such as EDTA, tartrate and citrate which are widely used at present in the practice of electroless plating. In order to maintain a constant pH value during the deposition process buffers are required. The choice of a buffering system is often dependent upon the reducing agent and the complexing agent used in the plating bath. The nature of the tetraaza copper complexation is such that a change in the buffering agent is possible without affecting desirable bath characteristics. Buffer systems such as valine (pH 8.7), tris(hydroxymethyl)aminomethane (pH 9), borax (pH 8 to 10), boric acid (pH 7 to 9), triethanolamine (pH 8 to 11), NaOH (pH 10 to 12), triisopropanolamine, ethanolamine in combination with tetraaza ligands (open and closed rings) were used to formulate bath compositions over a wide range of pH (7 to 12). All of the compositions provided stable baths at temperatures in the range between 45 °C and 70 °C with similar plating performance. The result is unexpected and provides a novel aspect of the present invention which is not achievable using existing electroless processing including the use of formaldehyde based electroless copper bath. For thin film packaging applications the preferred buffer system is triethanolamine at pH 9, or boric acid at pH 8 to 9. The preferable reducing agent for copper deposition are amine boranes. The borane component is responsible for electron donation to the catalytic substrate. Other amine adducts such as morpholine borane, t-butylamineborane and pyridine borane are substantially equally useful reducing agents for use in practicing the present invention. However, the preferred reducing agent is dimethylamine borane (DMAB). Additives are combined in the plating bath to provide various enhancements. Surfactants are added to facilitate hydrogen solution. Surfactants can be anionic, cationic or neutral. In the present invention sodium lauryl sulfate, FC95 which is a fluorocarbon based surfactant and commercially available from the 3M Company, hexadecyl trimethylammonium hydroxide are advantageous for the removal of hydrogen bubbles evolved during deposition. The preferred surfactant is hexadecyl trimethylammonium hydroxide. Addition agents such as 1,10 phenanthroline and 2,2 bipyridine are sometimes used to ensure long term stability and to achieve desirable metallurgy such as brightness ductility, and resistivity. The same result can be achieved with sodium cyanide. Cyanide however is not an essential requirement for the operation of the present invention. Air agitation or agitation with a mixture of nitrogen and oxygen is especially useful for long term bath operation at temperatures greater than approximately 60 °C and also improve metallurgical qualities of the copper deposit. A typical electroless plating bath in accordance with the present invention is made of The pH of the bath was adjusted to 9 using sulfuric acid. However, boric acid is also useable as a pH adjustor. The observed plating rate is between 1 and 4 µm/h (microns/hour)between 45 °C and 60 °C. Plating studies were performed on copper foils 0.025 to 0.076 mm (1 to 3 mils) thick under various experimental conditions. Electroless deposition was also demonstrated on evaporated/sputtered copper seed layers (thickness of 1 to 2 µm (microns)) on Si/Cr substrates and on Pd/Cr substrates and on Pd/Sn seeded non-metallic substrates such as epoxy boards. Figure 2 is a graphical representation of the electroless copper plating rate variation with copper ion concentration. The bath contained 11 g/l of 1,5,8,12 tetraazadodecane, 50 ml/l triethanolamine, 4 g/l of DMAB and 110 micrograms/l of phenanthroline with the pH adjusted to 9. As can be seen, the plating rate is substantially independent of the copper concentration between about 8 and 40 mM. The typical plating rate variations as a function of DMAB concentration at different temperatures is graphically shown in Figure 3. The bath contained 11 g/l 1,5,8,12 tetrazadodecane, 50 ml/l triethanolamine, 8 g/l copper sulfate and 110 micrograms/l phenanthroline with the pH adjusted to 9.0. The plating rate increases linearly as a function of DMAB concentration and temperature. The electroless plated copper appears bright and resistivity measurements of films of 3 to 6 microns thickness indicate values in the range between 1.9 and 2.4 microohm cm. The effect of changing the tetraaza ligands on the stability of electroless plating was studied. The ligands triethylenetetraamine and 1,5,9,13 tetraazatridecane are not effective replacements for 1,5,8,12 tetraazadodecane. Using the two former ligands, the bath homogeneously decomposes in the presence of the complexing agents. The ligand 1,4,8,11 tetraazaundecane (also known as N,N'bis (2-aminoethyl)1,3 propanediamine) complexes copper strongly enough to result in stable bath operation. Extending the concept, we have found that the macrocyclic ligands 1,4,8,11 tetraazacyclotetradecane and 1,4,8,12 tetraazacyclopentadecane are about equally effective in stabilizing a useable electroless copper plating bath. The above observations are rationalized on the basis of the known stability order of copper complexation. The stability increases in the order triethylenetetramine, tetraazatridecane, tetraazadodecane, tetraazaundecane, tetraazacyclopentadecane, tetraazacyclotetradecane. The described electroless plating bath is successfully operable with ligands that bind copper with a stability equal to or greater than 1,5,8,12 tetraazadodecane. While in the above described preferred embodiment a pH for the operation of the triethanolamine buffer bath is 9, the bath has been successfully operated with a pH as low as 7.8. Using the macrocyclic ligands 1,4,8,11 tetraazacyclotetradecane and 1,4,8,12 tetraazacyclopentadecane with the triethanolamine buffer, electroless plating was performed at a pH as low as 7 due to the additional stability conferred by the macrocycle.

Claims: Electroless copper plating bath which has a pH in the range substantially between 7 and 12, comprising: 4 to 15 grams per liter of a copper salt 40 to 200 mM of a tetraaza ligand 3 to 10 g/l of an amine borane 25 to 100 ml/l of a buffer, wherein said copper salt is selected from the group consisting of copper sulfate, acetate, nitrate, and flouroborate, said tetraaza ligand is selected from the group consisting of 1,5,8,12 tetraazadodecane, 1,4,8,11 tetraazaundecane, 1,4,8,11 tetraazacyclotetradecane, 1,4,8,12 tetraazacyclopentadecane, said amine borane is selected from the group consisting of DMAB, morpholineborane, t-butylamineborane and pyridineborane, the buffering agent of said buffer is selected from the group consisting of valine, tris(hydroxymethyl)-aminomethane, borax, boric acid, triethanolamine, NaOH, triisopropanolamine and ethanolamine. Electroless copper plating bath as set forth in claim 1, further comprising a surfactant selected from the group consisting of sodium lauryl sulfate, fluorocarbon based surfactant, and hexadecyl trimethylammonium hydroxide. Electroless copper plating bath as set forth in claims 1 and 2 further comprising an addition agent selected from the group consisting of 1,10 phenanthroline, 2,2 bipyridine and sodium cyanide. Electroless copper plating bath as set forth in claim 1 wherein the pH is in the range substantially between 7 and 9. Electroless copper plating bath as set forth in claims 1 to 4 wherein the bath is stable over at a temperature in the range between 45°C and 70°C. Use of an electroless copper plating bath for providing a copper deposit on a substrate as set forth in claims 1 to 5 wherein the substrate is an alkali sensitive substrate selected from the group consisting of polyimide, Cu-seeded Si/Cr, Pd/Sn seeded non-metallic substrate, and a substrate including positive photoresist. Use of an electroless copper plating bath for providing a copper deposit on a substrate as set forth in claims 1 to 6 wherein the plating bath is agitated by bubbling air. Electroless copper plating bath as set forth in one or several of claims 1 to 7, consisting of 64 mM tetraaza ligand 32 mM copper sulfate 68 mM DMAB 10 to 50 mg/l hexadecyl trimethylammonium hydroxide 30 to 600 mg/l 2,2 bipyridine and a sufficient quantity of buffering agent selected from the group consisting of valine, tris (hydroxymethyl) aminomethane, borax, NaOH, triethanolamine, triisopropanolamine and ethanolamine, and wherein said tetraaza ligand is selected from the group consisting of 1,5,8,12 tetraazadodecane, 1,4,8,11 tetraazaundecane, 1,4,8,11 tetraazacyclotetradecane and 1,4,8,12 tetraazacyclopentadecane and a sufficient amount of acid to adjust the pH to be in the range between 7 and 12. Electroless copper plating bath as set forth in claim 8, wherein said sufficient quantity of buffering agent is 50 ml/l triethanolamine. Electroless copper plating bath as set forth in claim 8, wherein said sufficient quantity of buffering agent is 0.1 molar borax. Electroless copper plating bath as set forth in claim 8, wherein said sufficient quantity of buffering agent is 15 g/l boric acid. Method for depositing copper on a substrate from an electroless copper plating bath as set forth in one or several of claims 1 to 11. Method of claim 12 wherein said substrate deposited with copper is alkali sensitive and is selected from the group consisting of polyimide, Cu seeded Si/Cr, Pd/Sn seeded non-metallic substrate, and a substrate including positive photoresist.

Inventors: JAGANNATHAN, RANGARAJAN, KNARR, RANDOLPH FREDERICK, KRISHNAN, MAHADEVAIYER, WANDY, GREGORY PETER
Applicants: INTERNATIONAL BUSINESS MACHINES CORPORATION
Application year: 1990
Main classification: C23C18
IPC codes: C23C18