SUPERCONDUCTIVE LOGIC DEVICE

Abstract: A logic circuit device is comprised of a superconductive body of a ceramic superconductive material having a magneto-resistive property and at least one conductor arranged near to the superconductive body for exerting a magnetic field to the same wherein the superconductive body generates a resistance therein in response to a magnetic field generated by at least one conductor. Also, a logic circuit using a pair of the superconductive logic device is disclosed.

Description: The present invention relates to a logic circuit device which uses at least one superconductor. Devices of this type are known, for example, from DE-B-1,282,078 and US-A-3,076,102. The Josephson device is well known as a logic circuit device using a superconductor and it has such a layered structure than an extremely thin insulation film is sandwiched between superconductors made of Nb or Pb alloy. However, because it becomes necessary to make the thickness of the insulation film thin to an order of 10 Å in order to obtain an effective Josephson junction, it is very difficult to produce Josephson devices since specialised methods for manufacturing the thin films are needed. Although the Josephson device has a technical advantage in that it shows a very quick response, it is not advantageous for practical use since a change in the output level thereof is small. The present invention aims to provide a superconductive logic device of high performance which is easy to manufacture. Another aim of the present invention is to provide a superconductive logic device of high performance which is able to function as any one of fundamental logic circuits such as AND, HAND, OR, EX-OR and NOR logic circuits. A further aim of the present invention is to provide a superconductive logic device of high performance which is able to respond to at least two input signals. In accordance with the invention, there is provided a logic device comprising: a superconductive body exhibiting magneto-resistive characteristics when maintained substantially at its critical temperature; means for applying a constant electrical current to the superconductive body; conductor means disposed in the region of the superconductive body and electrically insulated therefrom to apply a magnetic field to the superconductive body in dependence upon electrical current flowing through the conductor means; and means for detecting the effect of one or more signal currents in the conductor means upon the resistance of the superconductive body, characterised in that : said superconductive body comprises an elongate thin film ceramic material having random grain boundaries which act as weak couplings, said elongate thin film being formed on an electrically insulating substrate, and in that : said conductor means comprises at least one thin film strip conductor formed on said substrate with at least a portion of said strip conductor extending parallel with the length dimension of said superconductive body. In preferred embodiments of the invention, the superconductive body and the conductor means are formed on the same face of said substrate. The superconductive body used in the present invention is made of a ceramic superconductive material which has grain boundaries therein. These grain boundaries are considered to form various weak couplings including point contacts, tunnel couplings and the like and, accordingly, the superconductive body shows a magneto-resistive property by applying a magnetic field thereto while applying a constant current thereto. In the present invention, this magneto-resistive property of a ceramic superconductor is effectively utilized. Namely, the superconductive body responds to a magnetic field generated by a current applied to the conductor means by generating a resistance therein if the magnetic field applied thereto is stronger than a threshold magnetic field which is determined in accordance with the magneto-resistive property thereof and the strength of the current to be applied thereto. An example of the magneto-resistive property of a ceramic superconductor is shown in Fig. 4. Here, the resistance generated in the superconductor increases steeply as the magnetic field increases above the threshold magnetic field. Thus, the superconductive body according to the present invention has a high sensitivity and a quick response to the magnetic field applied thereto. This guarantees a high performance of the superconductive logic device according to the present invention. In a preferred embodiment, said conductor means comprises two strip conductors which are electrically insulated from one another. In this superconductive logic device, the superconductive body is able to respond according to the currents applied to the respective conductor means. Thus, a variety of fundamental logic circuits can be realised by controlling the currents and their strengths. Preferred embodiments of the invention will now be described, by way of example only, with reference to the accompanying drawings, in which: Fig. 1 is a plan view of a superconductive logic device according to a first preferred embodiment of the present invention; Fig. 2 is an explanatory view for showing a method for forming a superconductive body to be used in the superconductive logic device according to the present invention; Fig. 3 is an explanatory view for showing a circuit equivalent to a circuit to be formed by grain boundaries in the superconductive body which act as weak couplings; Fig. 4 is a graph showing the magneto-resistive property of the superconductive body; Fig. 5 is a time chart showing an output voltage obtained by the superconductive logic device according to the first preferred embodiment; Fig. 6 is a plan view of another superconductive logic device according to the first preferred embodiment of the present invention; Fig. 7 is a time chart showing a function of the superconductive logic device shown in Fig. 6; Fig. 8 is a plan view for showing another method for applying currents to first and second control lines of the superconductive logic device shown in Fig. 6; Fig. 9 is a time chart showing a function of the superconductive logic device shown in Fig. 8; Fig. 10 is a perspective view showing one more superconductive logic device according to the first preferred embodiment of the present invention; Fig. 11(a) is a partial plan view of a further superconductive logic device according to the first preferred embodiment of the present invention; Fig. 11(b) is a cross-sectional view along A-A' line of Fig. 11(a); Figs 12(a) and 12(b) are perspective views showing a method for forming a superconductive logic device according to the first preferred embodiment of the present invention; Fig. 12(c) is a perspective view showing another superconductive body formed on a substrate according to the first preferred embodiment of the present invention; Fig. 13 is a plan view of a superconductive logic device according to a second preferred embodiment of the present invention; Fig. 14 is a view of a logic circuit using the superconductive logic device shown in Fig. 13; Figs. 15(a), 15(b), 15(c) and 15(d) are graphs for showing a relation among quantities used in the circuit shown in Fig. 14. Fig. 16 is a circuit showing a superconductive logic circuit using a pair of the superconductive logic devices each of which is shown in Fig. 14; Figs. 17(a), 17(b) and 17(c) are time charts for showing the function of the circuit shown in Fig. 16; Fig. 18 is another circuit showing a superconductive logic circuit using a pair of the superconductive logic devices each of which is shown in Fig. 14; Figs. 19(a), 19(b) and 19(c) are time charts for showing the function of the circuit shown in Fig. 18; Fig. 20 is a schematic perspective view of a superconductive logic device according to a third preferred embodiment of the present invention; Fig. 21 is a graph showing the magneto-resistive property of the superconductive body shown in Fig. 20; Fig. 22 is a graph showing a relation between a threshold magnetic field to the superconductive body and a current applied thereto; Figs. 23 and 24 are time charts for showing respective functions of the superconductive logic device shown in Fig. 22, which are obtained according to manners of application of currents; Fig. 25 is a perspective view of a superconductive logic device according to a fourth preferred embodiment of the present invention; Fig. 26 is a symbolized circuit showing the superconductive logic device shown in Fig. 25; Figs. 27(a) and 27(b) show examples of application of the circuit shown in Fig. 26, respectively; Figs. 28(a) and 28(b) show examples of application using a pair of the circuits each shown in Fig. 26, respectively; Figs. 29(a) and 29(b) show other examples of application using a pair of circuits of the type shown in Fig. 26, respectively; Fig. 30 is a perspective view showing another superconductive logic device according to the fourth preferred embodiment of the present invention; Fig. 31 is a plan view showing a superconductive logic device according to a fifth preferred embodiment of the present invention; Fig. 32 is a plan view showing another superconductive logic device according to the fifth preferred embodiment of the present invention; Fig. 33 is a time chart showing a function obtained by the superconductive logic circuit shown in Fig. 32; and Fig. 34 is a plan view showing a variation of the superconductive logic device shown in Fig. 32. Fig. 1 shows a plan view of a superconductive logic device according to a first preferred embodiment of the present invention. The superconductive logic device 1 comprises a superconductive magnetic sensor 3 and a linear conductor 5 formed in parallel with the lengthwise direction of the magnetic sensor 3. The magnetic sensor 3 and the linear conductor 5 are formed on an insulation substrate 7. The magnetic sensor 3 comprises a magneto-resistive superconductor 9 of an elongated rectangular plate configuration, a pair of current electrodes 11 and 11 formed at respective ends of the superconductor 9 and a pair of voltage electrodes 13 and 13 formed in between the pair of current electrodes 11 and 11 on the superconductor 9. Each of the lead lines 15 and 15 of the current electrodes 11 and 11 is formed on the substrate 7 so as to extend in parallel with the linear conductor 5 and each of lead lines 17 and 17 of the voltage electrode 13 and 13 is also formed extended in parallel with the linear conductor 5, as shown in Fig. 1. Before starting an explanation of actions of the superconductive logic device 1, a manufacturing method of the magneto-resistive superconductor 9 is explained referring to Fig. 2 showing a manufacturing apparatus therefor. A substrate 7 desirably made of stabilized zirconia is supported on a base plate 18 and heated at superconductive magnetic sensor 3 and a linear conductor 5 formed in parallel with the lengthwise direction of the magnetic sensor 3. The magnetic sensor 3 and the linear conductor 5 are formed on an insulation substrate 7. The magnetic sensor 3 comprises a magneto-resistive superconductor 9 of an elongated rectangular plate configuration, a pair of current electrodes 11 and 11 formed at respective ends of the superconductor 9 and a pair of voltage electrodes 13 and 13 formed in between the pair of current electrodes 11 and 11 on the superconductor 9. Each of the lead lines 15 and 15 of the current electrodes 11 and 11 is formed on the substrate 7 so as to extend in parallel with the linear conductor 5 and each of lead lines 17 and 17 of the voltage electrode 13 and 13 is also formed extended in parallel with the linear conductor 5, as shown in Fig. 1. Before starting an explanation of actions of the superconductive logic device 1, a manufacturing method of the magneto-resistive superconductor 9 is explained referring to Fig. 2 showing a manufacturing apparatus therefor. A substrate 7 desirably made of stabilized zirconia is supported on a base plate 18 and heated at a temperature of about 400°C by a heater 19. Solvent of nitrate containing a ceramic material is sprayed onto the substrate 7 by a spray gun 20 intermittently. The ceramic material is a mixture of Y(NO₃)₃·6H₂O, Ba(NO₃)₂, Cu(NO₃)₂·3H₂O which are weighed so as to have a composition of Y₁BA₂Cu₃O 7-x (0 < x < 1). The spray operation is continued until the thickness of a film formed on the substrate 7 becomes 5 µms. Then, the film obtained is sintered at 950°C for 60 minutes and, thereafter, annealed at 500°C for 10 hours. The ceramic superconductive film thus formed has such a property that the resistance thereof begins to decrease at 100 K and becomes zero at 83 K. Next, a resist is applied on the ceramic superconductive film and a superconductor 9 is formed by the photolithographic method using an etchant of phosphoric acid so as to have a configuration of 50 µms width and 30 mms length. Thereafter, Ti film is deposited on the substrate 7 and the superconductor 9 and, then, the linear conductor 5, electrodes 11, 11, 13 and 13 and lead lines 15, 15, 17 and 17 are formed using the photolithographic technique and the lift off method. Thus, the superconductive logic device 1 as shown in Fig. 1 is obtained. The ceramic superconductor thus obtained has random grain boundaries supposed to act as weak couplings including point contacts and tunnel junctions therein and, therefore, it forms a collective body of Josephson junctions 121, as shown in Fig. 3. In fact, the ceramic superconductor shows magneto-resistive property as shown in Fig. 4. Namely, the resistance thereof appears suddenly in accordance with an increase of a magnetic field applied thereto in the state that an electric current is fed between the current electrodes 11 and 11. It is also to be noted that the resistance increases steeply with the increases of the applied magnetic field. Further, it is to be noted that the threshold value of the magnetic field from which the resistance begins to appear can be controlled by the strength of a current to be applied to the ceramic superconductor 3 as clearly shown in Fig. 4. If a current of 20 mAs is fed to the linear conductor 5 via terminals e and f thereof, a magnetic field of 0.4 gausses is generated at a position apart from the linear conductor by 5 to 50 µms. Assuming that the distance between the linear conductor 5 and the magnetic sensor 3 is 50 µms and a constant current of 2 mAs is supplied to the latter via terminals a and b thereof, an output voltage of 20 µVs is obtained between terminals c and d of the pair of voltage electrodes 13 and 13. From this data, the linear conductor 5 is formed as a pattern of 30 µms width, 1µms thickness and 50 µms distance defined between centres of the linear conductor 5 and the magnetic sensor 3. According to the composition of the superconductive logic device 1, if a current I of 12 mAs is applied to the conductor 5 while keeping the temperature of the magnetic sensor 3 at a temperature equal to or lower than the critical temperature 83 K and applying the constant current of 2 mAs to the same, the magnetic sensor 3 outputs a voltage V of 20 µVs between the terminals c and d. The rise time of the voltage is about 0.5 pico-seconds and, therefore, is negligible. If the current I is not applied to the conductor 5, no output voltage is generated in the magnetic sensor 3 since no magnetic field is applied to the same. Thus, the superconductive logic device 1 shows a quick and clear response against the current I applied to the linear conductor 5, as shown in Fig. 5. Fig. 6 shows another superconductive logic device. As is apparent from comparison of Fig. 5 with Fig. 1, this superconductive logic device 1 has one more linear conductor 6 extending in parallel with the linear conductor 5 on the substrate 7. In this case, a distance between centres of the magnetic sensor 3 and the first conductor 5 and that between centres of the first and second conductors 5 and 6 are set at 50 µms, respectively, and widths of these three elements are set at 50 µms, 30 µms and 30 µms, respectively. In this structure of the superconductive logic device, an output voltage of 20 µVs is obtained by the magnetic sensor 3 when a current 20mAs is applied only to the second conductor 6 while applying a current of 2mAs to the magnetic sensor 3. According to this structure, it becomes possible to operate the superconductive logic device 1 as both an AND logic device and an OR logic device by controlling the strengths and directions of currents I₁ and I₂ applied to the first and second linear conductors 5 and 6. In order to operate it as an AND logic device currents I₁ and I₂ satisfying the following conditions are applied to the first and second linear conductors 5 and 6 in the same direction, respectively. H₁ < H₀, H₂ < H₀, H₁ + H₂ > H₀ (1) wherein H₀ is a threshold magnetic field from which a resistance appears in the superconductor 9 to which a constant current is applied; H₁ is a magnetic field applied to the magnetic sensor 3 by applying the current I₁ to the first linear conductor 5 and H₂ is a magnetic field applied to the sensor 3 by applying the current I₂ to the second linear conductor 6. As is apparent from the above conditions, no output is obtained by the magnetic sensor 3 when either one of the first and second currents I₁ and I₂ is applied, since the magnetic field generated and applied to the magnetic sensor thereby is weaker than the threshold H₀. However, when both of the first and second currents I₁ and I₂ are applied to the first and second linear conductors 5 and 6 from the same direction at the same time, the magnetic sensor 3 outputs an output voltage since a resistance is generated in the superconductor 9 by the magnetic field (H₁ + H₂) applied thereto. As shown in Fig. 7, in this example, an output voltage larger than 20 µVs is obtained as an AND logic output by setting I₁ and I₂ at 8 mAs and 15 mAs, respectively. On the other hand, if the first and second currents I₁ and I₂ satisfying the following conditions are applied to the first and second conductors 5 and 6 in opposite directions with each other, as shown in Fig. 8, the superconductive magnetic sensor functions as an EX-OR logic device. H₁ > H₀, H₂ > H₀, |H₁ - H₂| < H₀ (2) wherein each of magnetic fields H₀, H₁ and H₂ is defined in the same manner as of the conditions (1). As is apparent from these conditions (2), the magnetic sensor 3 outputs an exclusive OR logic output only when either of the first and second currents I₁ and I₂ is applied, as shown in Fig. 9. Although the first and second current I₁ and I₂ are determined to have different values for satisfying the conditions in this example, the conditions can be satisfied by adjusting distances between the first and second conductors 5 and 6 and the magnetic sensor 3 while keeping the first and second currents I₁ and I₂ at a constant value. The pattern layout for the magnetic sensor 3 and the first and second conductors 5 and 6 is not limited to that of the present preferred embodiment. For example, as shown schematically in Fig. 10, the first and second linear conductors 5 and 6 can be arranged on both sides of the magnetic sensor 3, respectively. Further, they can be arranged on a protection film (not shown) of polyimide resin, SiO₂ or the like which is formed on the magnetic sensor 3 to cover the same. In an example shown in Figs. 11(a) and 11(b), a protective film 10 of polyimide, SiO₂ or the like is formed on the magnetic sensor 3 and two linear conductors 5 and 6 are formed so as to cross the magnetic sensor 3 perpendicularly. In this case, the magnetic sensor 3 can output various logic outputs by controlling respective currents to be applied to the first and second linear electrodes 5 and 6. It is to be noted that the conductors 5 and 6 and the ceramic superconductor 9 can be formed by a film of a ceramic superconductive material using the sputtering method MOCVD, the electron beam method or the like. These methods offer the possibility that patterns of the above mentioned elements can be made finely. It is also possible to make the conductors 5 and 6 using a superconductive ceramic material used for the magnetic sensor 3. In this case, the manufacturing process can be simplified since the conductors 5 and 6 are formed together with the superconductor 9 for the magnetic sensor 3. Figs. 12(a) and 12(b) or 12(c) show an example wherein linear conductors are formed by patterning a ceramic superconductive film 32. The ceramic superconductive film 32 itself is formed according to the same method as stated above. The film 32 formed on a substrate 31, as shown in Fig. 12(a), is patterned by a suitable etching method, as shown in Fig. 12(b) or Fig. 12(c). In the pattern shown in Fig. 12(b), two linear patterns 32a and 32b extending in parallel with each other are formed electrically separated. The linear portion of the pattern 32a is used as a superconductor for the magnetic sensor and the linear portion of the pattern 32b is used as a linear conductor. The former pattern 32a has two current electrodes a and b and also two voltage electrodes c and d drawn out to respective sides of the substrate 31 and the latter pattern 32b has two electrodes e and f drawn out to respective corners of the substrate 31 for applying a control current to the linear conductor. The structure given by this pattern is essentially the same as that shown in Fig. 1. Accordingly, if the pattern is formed so as to have the same dimensions as those of the latter, the same result can be obtained. The pattern shown in Fig. 12(c) is essentially the same as the structure of the superconductive logic device shown in Fig. 10. Namely, the pattern has first and second linear conductors 32b and 32c extending in parallel with a magnetic sensor 32a. Accordingly, the superconductive logic device operates as AND and EXCLUSIVE OR logic devices by controlling currents I₁ and I₂ as follows: If the currents I₁ and I₂ satisfy the following conditions; I₁ < I₀, I₂ < I₀, I₁ + I₂ > I₀ (3) wherein I₀ is a threshold current which gives the threshold magnetic field H₀ and, if both of the currents I₁ and I₂ are applied to the first and second conductors 32b and 32c from the same direction, the magnetic sensor 32a outputs an AND logic output between the electrodes c and d as explained above with reference to Figs. 6 and 7. The superconductive logic device behaves as an exclusive OR logic device provided that the currents I₁ and I₂ satisfy the following conditions and that the directions of application of the currents I₁ and I₂ are mutually the same. I₁ > I₀, I₂ > I₀, |I₁ - I₂|<I₀ (4) In this case, it outputs an output voltage only when either of the currents I₁ and I₂ is applied to either of the first and second conductors 32b and 32c. If the directions of application of the currents I₁ and I₂ satisfying the conditions are mutually opposing, it behaves as an OR logic device. In the present preferred embodiment, portions of the film among the first and second conductors 32b and 32c and the magnetic sensor 32a are removed by etching in order to separate (insulate) each from the other electrically. However, electrical separation can also be attained by changing the electrical property of those portions from a conducting one to an insulating one. As a method for changing the property, ions of As are implanted into portions of the film to be changed after covering the film with a metal mask having a pattern as shown in Fig. 12(b) or 12(c). According to this method, a crystal structure of the ceramic superconductor is damaged by implanting As ions and is supposed to be changed into a non-crystal structure. The superconductive logic device manufactured using this method shows the same property as the superconductive logic device manufactured using the etching technique. The method for forming portions electrically separated is not limited to the above. A mechanical removal method (such as the sand blast method), the photoetching method, the reforming method using diffusion of different elements or the like is also applicable. It is to be noted that the ceramic superconductor to be used in the present invention is not limited to Y₁Ba₂Cu₃O 7-x provided that it has random grain boundaries therein. Fig. 13 shows a superconductive logic device 1 according to the second preferred embodiment of the present invention. In the present preferred embodiment, first and second linear ceramic superconductors 41 and 42 are formed in a lengthwise direction of a substrate 7 in series. Further, first and second control lines 46 and 47 are formed on the substrate 7 in series with each other and in parallel with the first and second superconductors 41 and 42, respectively. Respective outer ends of the first and second superconductors are connected to lead lines 43 and 45 forming terminals a and c at respective outer ends. Respective inner ends of them are connected by a lead line 44 of an inverted T-shape which forms a terminal b at its free end. Similarly, respective outer ends of the first and second control lines 46 and 47 are connected to lead lines 48 and 50 forming terminals d and f at respective free ends and a lead line 49 of a T-shape forming a terminal e at its lower end is connected between them. Fig. 14 shows an inverter logic circuit using the superconductive logic device 1 shown in Fig. 13. In Fig. 14, the first and second superconductors 41 and 42 are represented by variable resistance R₁ and R₂, respectively and the first and second control lines 46 and 47 are represented by magnetic coils, respectively. The terminal a is connected to a voltage supply source of a standard voltage Vcc and the terminal c is connected to the ground GND. The terminals d and f are connected, via resistances r₁ and r₂, to the ground GND and the voltage supply source, respectively. An input voltage V IN is applied to the terminal e and an output voltage V OUT is taken out at the terminal b of a first inverter logic circuit and those of a second inverter logic circuit are connected in series between V OUT and GND. In this composition, when the input voltage V IN is varied from zero to Vcc, a current I₂ flowing through the second control line 47 decreases linearly and, in contrast, a current I₁ flowing through the first control line 46 increases linearly, as shown in Fig. 15(a). Assuming that the resistances r₁ and r₂ are equal and that each of the first and second superconductors 41 and 42 shows a constant resistance R₀ when each of the currents I₁ and I₂ is equal to or larger than I₀ which is obtained when V IN = 1/2 Vcc , resistances R₁ and R₂ (R₁ = R₂ = R₀) are generated in the first and second superconductors 41 and 42 according to the variation of the input voltage V IN as shown in Figs. 15(b) and 15(c), respectively. Accordingly, the output voltage V OUT being equal to Vcc is outputted at the terminal b until the input voltage V IN increases from zero to (1/2 Vcc), as shown in Fig. 15(d), and it drops down to zero as soon as V IN exceeds (1/2 Vcc). Thus, an inverter logic output is obtained. Fig. 16 shows a NAND logic circuit which comprises two inverter logic circuits each of which is shown in Fig. 14. In this NAND logic circuit, the first and second superconductors 41-1 and 41-2 of the first inverter circuit are connected in parallel between Vcc and V OUT , the first and second superconductors 42-1 and 42-2 of the second inverter circuit are connected in series between V OUT and the ground GND, and output terminals of the two inverter logic circuits are connected with each other so as to output an output voltage V OUT and input voltages V IN1 and V IN2 are input to input terminals of them, respectively. Assuming that r₁ = r₂ = r₃ = r₄ = r₀, I₀ = Vcc/2r₀, and that V IN1 and V IN2 are varied as shown in Figs. 17(a) and 17(b), respectively, the output voltage V OUT is varied as shown in Fig. 17(c). Namely, the output voltage V OUT drops down to zero level only when both V IN1 and V IN2 are high and, thus, a NAND logic output is obtained. Fig. 18 shows a NOR logic circuit obtained by changing the connection relations of the NAND logic circuit shown in Fig. 16. As is apparent from comparison of Fig. 16 with Fig. 17, the first and second superconductors 41-1 and 41-2 of the first inverter circuit are connected in series between Vcc and V OUT and those 42-1 and 42-2 of the second inverter circuit are connected in parallel between V OUT and GND in the former. In this case, as shown in Fig. 19(c), V OUT drops down to zero during application of V IN1 or V IN2 of a high level as shown in Fig. 19(a) or 19(b). Thus, a NOR logic output is obtained. In the present preferred embodiment, a desired NAND or NOR logic signal can be obtained even if the superconductors have the resistance R₀ simultaneously in the case that the threshold current I₀ becomes lower than Vcc/2r₀ . According to the present preferred embodiment, there is provided a complementary type superconductive logic circuit wherein a desired logic output V OUT can be obtained in accordance with values of the input currents V IN1 and V IN2 with the use of a stabilized voltage power supply. Fig. 20 shows an AND logic device 1 using an elongated thin superconductor 3. A pair of current electrodes 11 and 11 and a pair of voltage electrodes 13 and 13 are formed on respective end portions of the superconductor 3. Two current feeding means (not shown explicitly) for feeding currents I₁ and I₂ are connected to either one of lead lines 15 and 15 connecting respective current electrodes 11 and 11. A constant magnetic field H is applied to the superconductor 3 vertically thereto. Fig. 21 shows a magneto-resistive property of the superconductor 3 and Fig. 22 shows a relation between a threshold value Hth of the magnetic field to be applied to the superconductor 3 and a current to be fed thereto. When only I₁ of 23 mAs is applied to the superconductor 3 while applying the constant magnetic field H of 20 Oes thereto, no output voltage V OUT is outputted, as is apparent from Fig. 22. If I₂ of 25 mAs is superposed to I₁ of 25 mAs, the total current I (= I₁ + I₂) becomes 50 mAs and, therefore, the superconductor 3 has a resistance to generate an output voltage V OUT between two voltage electrodes 13 and 13 as shown in Fig. 23. Thus, the superconductive logic device 1 functions as an AND logic device. If the magnetic field H to be applied to the superconductor 3 is increased up to 30 Oes without changing the strengths of the currents I₁ and I₂, the superconductive logic device functions as an OR logic device as shown in Fig. 24. It is also possible to apply the magnetic field to the superconductor 3 using an electric magnet. In this case, the strength of the magnetic field can be controlled by controlling a current applied to the magnet. Accordingly the logic device can function as both AND and OR logic devices by changing the strength of the magnetic field. Fig. 25 shows a superconductive logic unit 101 according to the fourth preferred embodiment of the present invention. An elongated thin superconductor 102 is formed on a surface of a substrate 103 along a lengthwise centre line thereof. On the other surface of the substrate 103, a control line 104 of the same superconductive material as the superconductor 102 is formed in the lengthwise direction of the substrate 103. The substrate 103 can be made of a non-magnetic material such as stabilized zirconia, magnesia or the like. The superconductor 102 and the control line 104 are made using the same method as in the first preferred embodiment. On respective end portions of the superconductor 102, current electrodes 105 and 105 for applying a current thereto and electrodes 106 and 106 for applying a control current to the control line 104 in order to generate a magnetic field to be applied to the superconductive 102 are formed. The composition of the superconductive logic unit 101 is symbolized as shown in Fig. 26 for simplicity sake. Fig. 27(a) shows a fundamental logic circuit using the superconductive logic unit. In this circuit, the superconductor 102 is connected between a reference voltage line of a positive voltage Vcc and the ground in series with a resistance R. One end of the control line 104 is connected to the ground and the other end thereof is used as an input terminal I for inputting a control signal. An output terminal O is drawn out from a portion between the superconductor 102 and the resistance R. When a signal current as shown on the left side portion of Fig. 27(a) is applied to the control line 104 from the input terminal I, a magnetic field generated by the control line 104 is applied to the superconductor 102. At that time, a resistance is induced in the superconductor 102 and, therefore, a positive voltage output V OUT is outputted from the output terminal O. If a negative voltage (-Vcc) is applied to the reference voltage line, a negative output voltage (-V OUT ) is outputted from the output terminal O as shown in Fig. 27(b). Fig. 28(a) shows an AND logic circuit using two superconductive logic units. In this logic circuit, two control lines 104 and 104' are connected to input terminals A and B to which positive signal voltages are inputted, respectively and two superconductors 102 and 102' are connected in parallel between a resistance R connected to a standard power supply of a positive voltage (+Vcc) and the ground. A common output terminal A·B is drawn out from a portion between the resistance R and the superconductor 102 and from the other end of another superconductor 102'. When a control signal is inputted only to either of the two input terminals A and B, no output voltage V OUT is generated at the output terminal A·B since no resistance is generated in either of the superconductors. Accordingly, only when two control signals are inputted to both of the two input terminals A and B simultaneously, an output voltage V OUT is outputted from the output terminal A·B . Thus, this logic circuit forms an AND logic circuit. Fig. 28(b) shows a NAND circuit using two superconductive logic units. In this circuit, the standard power supply feeds a negative standard voltage (-Vcc) while maintaining other connection relations same as those of Fig. 28(a). Thus, an inverted output voltage (-V OUT ) is generated at an output terminal A·B only when control signals are inputted to both of the input terminals A and B simultaneously. Fig. 29(a) shows an OR logic circuit using two superconductive logic circuits. In this circuit, two superconductors 102 and 102' are connected in series, via a resistance R, between a standard voltage supply of a positive voltage Vcc and the ground, while respective control lines 104 and 104' are connected to respective input terminals A and B. An output terminal (A + B) is drawn out from a portion between the resistance R and the superconductor 102. When a control signal is input to either of the input terminals A and B in this logic circuit, an output voltage V OUT is generated at the output terminal (A + B) since a resistance is generated in either of the superconductors 102 and 102'. Thus, this logic circuit forms an OR logic circuit. Fig. 29(b) shows a NOR logic circuit using two superconductive logic units. As is apparent from comparison of Fig. 29(b) with 29(a), the resistance R is connected to a standard voltage supply of a negative voltage (-Vcc) in this logic circuit and, therefore, an inverted OR output voltage (-V OUT ) is outputted at the output terminal (A + B) . In Fig. 30, a superconductive logic unit 101 having a control line 104 and a line 106 can be made of a ceramic superconductive material using the same forming method as of a superconductor 102 to be formed on another surface of a surface of a substrate 103. In this composition, a constant current is always applied to the line 106 to exert a bias magnetic field to the superconductor 102. The bias magnetic field H B is set so as to have a strength relatively close to but lower than the threshold magnetic field H C . Due to this, the superconductor 102 can show a quick response to a control signal to be applied to the control line 104 even if the control signal is too weak to generate a resistance in the superconductor 102 only by itself. Although the control line and/or the bias line are formed on the rear surface of the substrate in the third preferred embodiment, they can be formed together with the superconductor on the same surface of the substrate as stated in the foregoing preferred embodiment. Fig. 31 shows a plan view of a superconductive logic device according to the fifth embodiment of the present invention. This superconductive logic device 51 comprises a superconductor 52 formed on a substrate 53 and a control line 54 of an inverted U shape which is formed on an insulation film 55 for insulating the superconductor 52 from the control line 54. The superconductor 52 has a pair of current electrodes 56 and 56 for applying a constant current and also a pair of voltage electrodes 57 and 57 for detecting an output voltage. If no current is supplied to the control line 54 no voltage is detected between terminals c and d. However, if a control current is applied to the control line 54, an output voltage V OUT is generated between terminals c and d since a resistance is generated in the superconductor 3 by a magnetic field generated by the control current. In this composition, dimensions of the superconductor 52 are set same as those of the superconductor 3 shown in Fig. 1 and the width of the control line 54 is set at 30 µms. In this case, if a control current of 5 mAs is applied to the control line 54 while applying a constant current of about 1 mA to the superconductor 52, an output voltage V OUT of about 20 µVs is generated between terminals c and d. In the case of Fig. 1, it is necessary to apply a constant current of about 10 mAs to the superconductor 53 in order to obtain an output voltage between terminals c and d. However, in the present case, the constant current can be decreased to 1 mA since the control line crosses over the superconductor 52 twice and, therefore, magnetic fields generated by respective portions of the control line 54 are applied concentratedly to the superconductor 42. Also, the strength of the control current is decreased to several mAs as stated above. In an example of Fig. 32, one more control line 58 having terminals g and h is formed on the substrate 53 substantially in parallel with the superconductor 52. As shown in Fig. 32, the middle portion 58a of the control line 58 is formed close to portion 54a of the control line 54 parallel to the superconductor 52. A distance between respective centres of the portions 58a and 54a is set at 50 µms. The widths of two control lines and the superconductor 52 are set at 30 µms, 30 µms and 50 µms, respectively. It is assumed that current I₁ and I₂ are set so as to satisfy the following conditions: H₁ < H₂, H₂ < H₀, H₁ + H₂ > H₀ wherein H₀ is a threshold magnetic field from which a resistance is generated in the superconductor 52 when a predetermined current is applied thereto, and H₁ and H₂ are magnetic fields applied thereto by respective currents I₁ and I₂. Under these conditions, no output voltage is detected between terminals c and d when either of the currents I₁ an I₂ is applied to either of the two control lines 54 and 58. However, an output voltage V OUT is generated between terminals c and d only when both of the currents I₁ and I₂ are applied in the same direction as indicated by arrows. For example, if the currents I₁ and I₂ are set at 3 mAs and 15 mAs, respectively, an output voltage V OUT of about 20 µVs is obtained. Thus, an AND logic circuit is obtained. The composition of this logic circuit is essentially same to that of the logic circuit shown in Fig. 6. However, it is to be noted that, according to the present preferred embodiment, an output voltage V OUT having a same height as that of the logic circuit shown in Fig. 6 is obtained with weaker currents than those of the latter. If the currents I₁ and I₂ satisfying the following conditions: H₁ > H₀, H₂ > H₀, |H₁ - H₂| < H₀ the superconductive logic device functions as an OR logic circuit. Namely, if only one current I₁ or I₂ is applied to the corresponding control line, an output voltage V OUT is generated between terminals c and d. However, if both of the currents I₁ and I₂ are applied to both of the control lines 54 and 58 simultaneously but in opposite directions to each other, no output voltage V OUT is detected, as shown in Fig. 33. Fig. 34 shows a variation of the superconductive logic circuit shown in Fig. 32. In this variation, a first control line 54' is formed in a U-shape having two parallel portions 54'a and 54'b extending in parallel with the elongated superconductor 52 and a connection portion 54'c is formed on an insulation film 55' crossing over the superconductor 52. A second control line 58 is formed in parallel with the portion 54'b of the first control line 54'. Since the essential structure of this superconductive logic circuit is identical with that of the logic circuit shown in Fig. 32, it functions as both AND and OR circuits by controlling the strengths and relative directions of the currents I₁ and I₂. It is understood that various other modifications will be apparent to and can be readily made by those skilled in the art without departing from the scope of the present invention. Accordingly, it is not intended that the scope of the claims appended hereto be limited to the description as set forth herein, but rather that the claims be construed as encompassing all the features of patentable novelty that reside in the present invention, including all features that would be treated as equivalents thereof by those skilled in the art to which the present invention pertains.

Claims: A logic device comprising: a superconductive body exhibiting magneto-resistive characteristics when maintained substantially at its critical temperature; means for applying a constant electrical current to the superconductive body; conductor means disposed in the region of the superconductive body and electrically insulated therefrom to apply a magnetic field to the superconductive body in dependence upon electrical current flowing through the conductor means; and means for detecting the effect of one or more signal currents in the conductor means upon the resistance of the superconductive body, characterised in that : said superconductive body comprises an elongate thin film ceramic material having random grain boundaries which act as weak couplings, said elongate thin film being formed on an electrically insulating substrate, and in that : said conductor means comprises at least one thin film strip conductor formed on said substrate with at least a portion of said strip conductor extending parallel with the length dimension of said superconductive body. A logic device according to claim 1, wherein said superconductive body and said conductor means are formed on the same face of said substrate. A logic device according to claim 2, wherein a portion of at least one said strip conductor crosses said superconductive body. A logic device according to claim 2 or claim 3, wherein said conductor means comprises two said strip conductors which are electrically insulated from one another. A logic device according to claim 4, as appendent to claim 2, wherein said two strip conductors are formed on the same side of said superconductive body. A logic device according to claim 4, as appendent to claim 2, wherein said two strip conductors are formed on opposite sides of said superconductive body. A logic device according to any one of claims 4 to 6, wherein respective signal currents I₁ and I₂ applied to said two strip conductors satisfy the following conditions: I₁ < I₀ I₂ < I₀ and I₁ + I₂ > I₀, where I₀ is a threshold current which generates a threshold magnetic field to change the resistance of said superconductive body. A logic device according to any one of claims 4 to 6, wherein respective signal currents I₁ and I₂ applied to said two strip conductors satisfy the following conditions: I₁ > I₀ I₂ > I₀ and |I₁ - I₂| < I₀, where I₀ is a threshold current which generates a threshold magnetic field to change the resistance of said superconductive body. A logic device according to any one of claims 4 to 6, wherein one of said two strip conductors carries a constant current to apply a bias magnetic field to said superconductive body. A logic device according to any one of claims 2 to 9, wherein said conductor means is formed of the same ceramic material as said superconductive body. A logic device according to any one of the preceding claims, wherein said means for applying a current comprises a first pair of electrodes connected to respective opposite ends of said superconductive body, and said means for detecting comprises a second pair of electrodes arranged to detect a voltage generated in said superconductive body. A logic device according to claim 11, as appendent to claim 10, wherein said first and second pairs of electrodes are formed as thin film strip conductors of the same ceramic material as said superconductive body. A method of manufacturing the logic device of claim 12, comprising the steps of forming a thin film layer of a superconductive ceramic material on one face of an electrically insulating substrate, and of patterning said thin film layer to define said superconductive body, said conductor means and said first and second pairs of electrodes. A method according to claim 13, wherein the patterning step comprises etching said thin film layer. A method according to claim 13, wherein the patterning step comprises ion implantation of said thin film layer.

Inventors: HASHIZUME, NOBUO, KATAOKA, SHOEI, KOBA, MASAYOSHI, NOJIMA, HIDEO, OHNO, EIZO, SAITO, SUSUMU, SATO, HIROYA, TOKOYAMA, SHINJI, TSUCHIMOTO, SHUHEI
Applicants: SHARP KABUSHIKI KAISHA
Application year: 1989
Main classification: H01L39
IPC codes: H01L39