SEMICONDUCTOR WAFER COATING APPARATUS

Abstract: In the coating apparatus disclosed herein, a semiconductor wafer is held on a vacuum chuck (11) mounted on the spindle (15) of a bidirectional servo motor (31). The servo motor (31) is energized by a servo amplifier (33) in response to the amplitude of the control signal provided to the amplifier. Dispensing means are provided for placing coating material on a wafer held in the chuck (11). An oscillator (43) is provided generating a periodic output signal of controllable amplitude and period. A programmable sequencer (35) is operative in a first time period for applying the oscillatory output signal as a control signal to the servo amplifier (33) thereby to angularly oscillate a wafer held in the chuck and for operating the dispensing means (19) to place a predetermined amount of coating material (40) on the wafer. The sequencing means is operative in a later time period for applying a fixed higher amplitude control signal to the servo amplifier thereby to spin the wafer and spread the coating material.

Description: The present invention relates to the manufacture of semiconductor devices and more particularly to apparatus for coating semiconductor wafers. As is understood by those skilled in the art, the manufacture of semiconductor devices, such as integrated circuits, is typically accomplished by microlithographic or photorepeater techniques which involve exposing a circuit pattern on the surface of a semiconductor wafer which has been coated with a photosensitive resist. After exposure, the resist is developed to reveal the desired pattern for subsequent processing steps. Both the coating and the developing must be precisely controlled in order to repeatably obtain the desired results. As is also understood, both the resist coating and the developing process typically involve the spreading of a thin film of liquid over the surface of the wafer in as uniform a manner as possible. Patent Abstracts of Japan, Vol. 9, No. 212 (E-339) (1935) 29 August 1985 of JP-A-6 074 624, discloses a step of inverting the spin direction of the wafer for reducing the generation of surface striae. Particularly in the resist coating operations, it is highly desirable to minimize the amount of coating material used since the materials employed are typically quite expensive. In previously known coating processes, a quantity of resist material is placed on the surface of a wafer and the wafer is then spun, initially at a relatively low speed to spread the material and then at a relatively high speed to reduce the layer to the desired thin film. It has typically been quite difficult to cause the initial spread of the resist to proceed evenly from the center of the wafer to the periphery so that an excess of material was necessary to insure that all portions of the wafer were covered. In accordance with this invention, there is provided an apparatus for coating semiconductor wafers, including a spindle, a chuck mounted on said spindle for holding a semiconductor wafer, dispensing means for placing coating material on a surface of a wafer held by said chuck, a bi-directional electric motor for rotating said spindle, a servo amplifier for energizing said motor as a function of the amplitude of a control signal to obtain an angular velocity of said spindle which varies as a function of said control signal, and sequencing means operative in a first time period for applying a first control signal to said servo amplifier and for operating said dispensing means to place a predetermined amount of coating material on said wafer, and operative in a later time period for applying a fixed, higher amplitude second control signal to said servo amplifier thereby to spin said wafer, characterized by an oscillator for generating a periodic output signal applied by said sequencing means as said first control signal to said amplifier during said first time period thereby to spin said wafer at an oscillating angular velocity. Fig. 1 is a perspective view, with parts broken away, of a spin coating station of the type to which the present invention is applicable; Fig. 2 is a perspective view, with housing parts removed, of the lower portion of the spin station showing a spindle drive motor; Fig. 3 is a schematic block diagram of motor control circuitry constructed in accordance with the present invention; Fig. 4 is a graph representing a motor spindle speed pattern in accordance with the prior art practices; and Fig. 5 is a diagram illustrating motor spindle speed behaviour in accordance with the present invention. Corresponding reference characters indicate corresponding parts throughout the several views of the drawings. Referring now to Figs. 1 and 2, the spin coating station illustrated there is of essentially conventional mechanical construction and is essentially the WAFERTRAC model 1006 process station manufactured and sold by GCA Corporation of Andover, Massachusetts, the assignee of the present invention. A wafer to be coated is placed on a vacuum chuck 11 by a transfer mechanism, designated generally by reference character 13. The vacuum chuck 11 is mounted on a spindle 15 so as to be rotatable around a central axis. A cylindrical lower cup assembly 16 surrounds the chuck 11 for catching coating material spun off the wafer as described hereinafter. A head assembly 17 carries a nozzle 19 through which coating material may be ejected or sprayed onto the upper surface of a wafer held in chuck 11. Nozzle 19 is connected through tubing 21 to a suitable metering pump, not shown in Fig. 1. The head assembly 17 is surrounded by a cylindrical upper cup 23. The head assembly and upper cup together may be raised or lowered with respect to the chuck by means of an elevator assembly 25. As is understood, the spindle and chuck may also be raised and lowered to facilitate the receiving of wafers from the transfer mechanism and coating. These actions are, however, essentially conventional and form no part of the present invention and thus are not described in detail herein. As is illustrated in Fig. 2, the chuck supporting spindle 15 is driven by a bidirectional electric servo motor designated generally by reference character 31. As is conventional, servo motor 31 is provided with means for generating a feedback signal which represents the actual angular velocity of the spindle and chuck. As is understood, both analog and/or digital feedback signals may be employed. As is illustrated in Fig. 3, the servo motor 31 is energized by means of a servo amplifier 33 which operates to control the energization of the motor as a function of the amplitude of a control signal in relation to the actual speed of the spindle as represented by the feedback signal. The standard WAFERTRAC model 1006 incorporates a microprocessor 35 which functions as a digital controller or sequencer, generating various control signals at precisely timed intervals and in response to various sensed conditions as is conventional in the process control arts. The model 1006 also incorporates a conventional ramp and speed signal generating circuit 37 which operates under the control of the microprocessor 35. As is conventional, the speeds and durations over which they are applied can be varied under program control. The microcomputer sequencer also controls the operation of the metering pump 39 which pumps photoresist coating material to the nozzle 19 from a suitable reservoir 40. This control signal is designated DISP5. Fig. 4 represents the conventional mode of operation of the model 1006 in coating wafers with resist. Once a wafer is placed on the chuck and the chuck moves the wafer into proximity of the dispensing nozzle, the spindle speed is ramped up to angular velocity of about 1000 rpm. After the wafer has reached this speed and stabilized, the dispensing pump 39 is energized for a period appropriate to dispense the desired amount of resist onto the wafer. During this period the resist, deposited near the center of the wafer, spreads across the upper surface of the wafer. Typically, this is not a highly regular spread but, rather, will evidence significant peaks or radial rays of material. These peaks or rays will reach the periphery of the wafer long before intervening areas are fully covered and thus there is some appreciable wastage of the coating material. After a time sufficient to insure that the entire wafer surface will be wetted with the resist material, the spindle speed is ramped up to an angular velocity of essentially 3300 rpm. This speed is maintained for about 30 seconds during which time the coating is brought down to a thin film of the desired thickness. In accordance with the practice of the present invention, an oscillatory rotation of the spindle is provided during the application of resist material. In the prior art system referenced previously, the analog output signal from the ramp speed control circuit 37 would be applied directly to the servo amplifier 33 as its control signal. In the apparatus illustrated, an analog multiplexer 41 permits the sequencer 35 to select between the output signal of the ramp and speed circuit 37 and an output signal derived from an oscillator circuit 43. The sequencer signal controlling the multiplexer 41 is designated SEL8. Oscillator 43 generates a sinewave having a frequency which is adjustable by means of a potentiometer 45. The output signal from the oscillator 43 is applied as an input to the analog multiplexer 41 through an amplifier circuit 47. Amplifier 47 includes both means for adjusting its gain, i.e. a potentiometer 51, and for adjusting the d.c. offset of the output signal from the amplifier, i.e. potentiometer 53. Thus, the periodic sinewave signal applied as the second input to the analog multiplexer 41 is adjustable as to period, amplitude and d.c. offset. As indicated previously, the operation of the servo amplifier 33 is to control the energization of the servo motor 31 in a sense tending to maintain the angular velocity of the spindle and chuck at a value which is essentially proportional to the amplitude of the control signal applied to the servo amplifier. In the embodiment illustrated, the output signal of the oscillator 43 is adjusted to essentially 10 hertz and the gain of the amplifier 47 is adjusted so that the peak angular velocity corresponds to the rotational speed of about 1000 rpm. The resulting behavior of the chuck speed is represented in Fig. 5. As may be seen, the chuck is caused to angularly oscillate and ,during this period of oscillation, the resist is dispensed on the upper surface of the wafer held in the chuck. While the exact fluid mechanical effects are not fully understood, it has been found that, using the oscillatory action during dispensing, the resist spreads out over the wafer in a pattern which is much more circular, evidencing fewer peaks or rays. The leading edge of the spreading pool appears as something of a wave spreading outwardly. After the resist has spread, the wafer is then again spun at a higher speed, e.g. 3300 rpm to thin down the film, as in the prior procedures. Because of the more even initial spread of the resist on the surface of the wafer, it has been found that substantially less resist may be used. For example, in coating five inch silicon wafers with Shipley-type 1400-24 resist using the conventional spin coating technique illustrated in Fig. 4, it was necessary to utilize a minimum of 3 cubic centimeters of resist for each wafer whereas with the oscillatory spreading action illustrated in Fig. 5 it was possible to achieve equivalent or even superior results using 1.4 cubic centimeters of resist or even less. It is also believed, based upon visual observation, that a superior uniformity of coating was ultimately achieved though no quantitative results have yet been obtained. In some circumstances, it may also be desired to superimpose the oscillatory motion upon a steady rotational speed. This can be achieved with the apparatus illustrated by appropriately adjusting the d.c. offset so that the output signal from the amplifier 47 includes a d.c. component proportional to the steady rotation desired. In effect, the superimposed rotation will in effect precess the wafer within the sinusoidal oscillation.

Claims: Apparatus for coating semiconductor wafers, including a spindle (15), a chuck (11) mounted on said spindle for holding a semiconductor wafer, dispensing means (19) for placing coating material on a surface of a wafer held by said chuck, a bi-directional electric motor (31) for rotating said spindle, a servo amplifier (33) for energizing said motor as a function of the amplitude of a control signal to obtain an angular velocity of said spindle which varies as a function of said control signal, and sequencing means (35) operative in a first time period for applying a first control signal to said servo amplifier and for operating said dispensing means to place a predetermined amount of coating material on said wafer, and operative in a later time period for applying a fixed, higher amplitude second control signal to said servo amplifier thereby to spin said wafer, characterized by an oscillator (43) for generating a periodic output signal applied by said sequencing means (35) as said first control signal to said amplifier (33) during said first time period thereby to spin said wafer at an oscillating angular velocity. Apparatus according to claim 1, wherein said motor (31) is provided with means for generating a feedback signal which varies as a function of the angular velocity of said spindle, said servo amplifier being operable to energize said motor as a function of the amplitude of said control signal in relation to said feedback signal to obtain an angular velocity of said spindle which varies as a function of said control signal, characterized by means (45) for varying the period of the periodic output signal, means (47, 51) for varying the amplitude of said periodic output signal, and said sequencing means being operative in said first time period for applying said periodic output signal at a controlled amplitude to said servo amplifier. Apparatus according to claim 2, characterized by said oscillator generating a sinusoidal output signal, and said periodic output signal varying means comprising a gain controlled amplifier (47).

Inventors: MERULLO, JOHN G., TEPOLT, GARY B.
Applicants: GENERAL SIGNAL CORPORATION
Application year: 1989
Main classification: G03F7
IPC codes: B05C11, H01L21, B05C9