METHOD OF PRODUCING MICROMECHANICAL SENSORS FOR THE AFM/STM PROFILOMETRY AND MICROMECHANICAL AFM/STM SENSOR HEAD

Abstract: A method is described for producing micromechanical sensors for the AFM/STM profilometry, which consist of a cantilever beam with a tip at its end and a mounting block at the opposite, comprising: 1. bilaterally coating a wafer substrate with a layer of inorganic material ; 2. producing a mask for the desired cantilever beam pattern on the top side of the wafer and in the upper part of said layer; and a mask in said layer on the bottom side of the wafer, using a first photolithographic step and an etching step; 3. planarizing said cantilever beam pattern with photoresist; 4. producing a mask for the desired tip in the area of the cantilever beam pattern using a second photolithographic step, producing the desired tip using an etching step, and simultaneously transfer­ ring the cantilever beam pattern from the upper to the lower part of said layer; and 5. removing the supporting wafer material by ani­ sotropic wet etching through the bottom side mask. In a second example a mask is produced for the desired cantilever beam pattern and the tip pattern. This mask which contains all relevant informations for a subsequent substrate etching process is transferred step by step into a silicon substrate. Between two successive sub­ strate etching process steps there is a mask etching step which does not require an additional lithography step however. A third example describes a process for making mono­ crystalline monolithic silicon tips on silicon pedestals. The invention also comprises a micromechanical sensor for the AFM/STM profilometry which is micromechanically manufactured from one piece of material.

Description: The present invention relates to a method of producing micromechanical sensors for the AFM/STM profilometry, which consist of a cantilever beam with a tip at its end and a mounting block at the opposite end. The invention also relates to a sensor head made in accordance with the method of the invention. The scanning tunneling microscope (hereafter abbreviated STM) has stimulated the development of new techniques for microcharacterization of materials which are based on the use of a very fine tip. One of these techniques involves the atomic force microscope (hereafter abbreviated AFM) which has recently demonstrated the capability to profile and image conductors and insulators. In the initial design of the AFM (Binnig G, Quate CF, Gerber Ch, (1986) Atomic Force Microscope, Phys. Rev. Lett. 56, 930 - 933 and EP-A-0 223 918) a sensor consisting of a spring-like cantilever which is rigidly mounted at one end and carries at its free end a dielectric tip profiles the surface of an object. The force between the object's surface and the tip deflects the cantilever, and this deflection can be accurately measured, for example by a second tip which is part of an STM. A lateral spatial resolution of 3 nm has initially been achieved. Another version of the AFM includes optical detection instead of an STM detection. In this version a tungsten tip at the end of a wire is mounted on a piezoelectric transducer. The transducer vibrates the tip at the resonance frequency of the wire which acts as a cantilever, and a laser heterodyne interferometer accurately measures the amplitude of the a. c. vibration. The gradient of the force between the tip and sample modifies the compliance of the lever, hence inducing a change in vibration amplitude due to the shift of the lever resonance. Knowing the lever characteristics, one can measure the vibration amplitude as a function of the tip - sample spacing in order to deduce the gradient of the force, and thus, the force itself (Duerig UT, Gimzewski JK, Pohl DW (1986) Experimental Observation of Forces Acting During Scanning Tunneling Microscopy, Phys. Rev. Lett. 57, 2403 - 2406; and Martin Y, Williams CC, Wickramasinghe HK (1987) Atomic Force Microscope-Force Mapping and Profiling on a sub 100-Å Scale, J. Appl. Phys. 61(10), 4723 - 4729). A most critical component in the AFM is the spring-like cantilever. As a maximum deflection for a given force is needed a cantilever is required which is as soft as possible. At the same time a stiff cantilever with a high eigenfrequency is necessary in order to minimize the sensitivity to vibrational noise from the building. Usually, ambient vibrations, mainly building vibrations, are of the order of <100 Hertz. If the cantilever is chosen such that it has an eigenfrequency f o ≧ 10 kHz, the ambient vibrations will be attenuated to a negligible value. These requirements can only be met by reducing the geometrical dimensions of the cantilever as reflected by the following two equations: The eigenfrequency f o of the cantilever is given by wherein E is Young's modulus of elasticity, ρ is the density, and K is a correction factor close to unity, l is the length, and t is the thickness of the cantilever. The spring constant of the cantilever on which its sensitivity depends is given by wherein F is the force which causes the deflection y of the cantilever, E is Young's modulus of elasticity, w is the width, l is the length, and t is the thickness of the cantilever. In accordance with the spring constant term the sensitivity of the cantilever is dependent on its dimensions and on the material of which it consists, with the highest sensitivity being obtained for long, thin and narrow cantilever beams. The width of the cantilever beam should be sufficiently large so that lateral vibrations are suppressed. Also, the width of the beam should permit the fabrication of additional structures, such as tips, thereon. Therefore, a minimum width w of around 10 µm seems reasonable. In practice, C has to be about ≧ 1 N/m in order to avoid instabilities during sensing of attractive forces, to prevent excessive thermal vibrations of the cantilever beam, and to obtain a measurable response. Dimensions of a cantilever beam compatible with C = 1 N/m, and f o = 10 kHz are for example: l = 800 µm, w = 75 µm, and t = 5.5 µm. In the normal deflection mode of the cantilever beam forces in the order of 10⁻¹² N can be detected. The sensitivity of the sensor head can be further enhanced by vibrating the object to be profiled at the resonance frequency f o of the cantilever beam, as described by G. Binnig et al in Phys. Rev. Lett. 56 (1986), pp. 930 - 933. In the AFM realized in accordance with the Binnig et al article and with EP-A-0 223 918 the requirements for cantilever and tip were met by a gold foil of about 25 µm thickness, 800 µm length, and 250 µm width to which a diamond fragment was attached with a small amount of glue. Another proposal used microfabrication techniques to construct thin-film (1.5 µm thick) SiO₂ microcantilevers with very low mass on which miniature cones could be grown by evaporation of material through a very small hole (Albrecht ThR, Quate CF, (1988) Atomic Resolution with the Atomic Force Microscope on Conductors and Nonconductors, J. Vac. Sci. Technol., pp. 271 - 274. The aforementioned diamond fragments glued in place at the end of cantilevers to obtain tips do not meet the technical requirements for the cantilever-and-tip assemblies for application in STM or AFM because firstly, the mass of the diamond fragment is too large for obtaining the required high eigenfrequencies, and secondly, mechanisms develop at the adhesive surface of the cantilever which negatively influence the quality of the STM or AFM cantilever-and-tip assembly. The aforementioned proposal using microfabrication techniques to construct SiO₂ microcantilevers on which miniature cones could be grown by evaporation is disadvantageous in that evaporated tips poorly adhere to the substrate, and the tip diameter at its base is limited to some 10 to 20 µm. The cantilever assembly of an STM or AFM is relatively fragile and is virtually impossible to clean when it is contaminated by material from the surface being scanned so that frequent replacement is required. From the foregoing description of the state of the art it was known to construct, in a first process step, cantilevers, and, in a second process step, to attach tips thereto. It will be obvious to those skilled in the art that the construction of a cantilever with a tip of that type is extremely delicate and prone to low yield. It is therefore desirable to provide a method for making a cantilever beam assembly having a microminiature tip fixed to the free end for application in STM or AFM, with said microminiature tip being uniform, sharp, well-formed, durable and inexpensive in fabrication. The cantilever beams with integrated tips are fabricated using microfabrication techniques. This technique allows to shape the tip in any desired mode, e. g. to shrink the tip diameter nearly to zero, and represents a reproducible method for fabricating integrated tips which is a significant contribution to STM/AFM technology. Since each cantilever beam is quite small hundreds of cantilever-and-tip assemblies can be constructed simultaneously on a single wafer taking advantage of the excellent reproducibility and low cost of batch fabrication. It is an object of the invention to teach a method for the construction of microcantilevers with integrated tips, which method uses a suitable combination of deposition, lithography, wet and dry etching process steps. The object of the invention is achieved with a method in accordance with claims 1 and 11. The invention also comprises multilevel masks for etching in accordance with above method claims (see claims 13 and 14) and structures (claim 15) made in accordance with the method of the invention. Prior to starting with the description of the details of the invention reference is made to the following publications relating to micromechanics: Petersen, KE, Dynamic Micromechanics on Silicon: Techniques and Devices, Vol. ED-25, No. 10, October 1978, pp. 1241 - 1250; Petersen, KE, Silicon as a Mechanical Material, Proc. of the IEEE, Vol. 70, No. 5, May 1982, pp. 420 - 457; and Jolly, RD, Muller, RS, Miniature Cantilever Beams Fabricated by Anisotropic Etching of Silicon, J. Electrochem Soc.: Solid-State Science and Technology, December 1980, pp. 2750 - 2754. With the method of the present invention low-mass microcantilever beams with integrated tips can be made carrying at one end a small piece of wafer for mounting the lever in the AFM, and at the opposite end an integrated tip for interaction with the surface of a sample to be profiled. The force and resonance frequency requirements of cantilever beam and integrated tip are met by using the microfabrication techniques. Due to the fact that cantilever and tip are made from one piece of material there are no adhesion problems between cantilever and tip. Details of several embodiments of the present invention will be described by way of example with respect to the accompanying drawings in which: Fig. 1 shows a cantilever beam carrying at one end a piece of wafer which is rigidly mounted on a piezoelectric bimorph, and a sharply pointed tip at its free end. Fig. 2 shows a sequence of process steps for making a cantilever beam with integrated tip which has been worked out of a silicon wafer substrate, using a mask with two levels of information, and photolithographic and etching steps. Referring to Fig. 1 a cantilever beam (1) is shown carrying at one end a piece of wafer (3) which is rigidly mounted on a piezoelectric bimorph (4), and a sharply pointed tip (2) at its free end. Cantilever beam (1) and tip (2) may consist of any solid material such as SiO₂, Si₃N₄, SiC, doped monocrystalline silicon, and polycrystalline silicon, or of pure monocrystalline silicon. In a first example a layer of solid material, preferably SiO₂, is applied to a silicon wafer, preferably a (100) wafer. By means of two photolithographic steps cantilever and tip masks will be defined, followed by suitable wet or dry etching process steps for their realization. Subsequently, this information is transferred step by step from the masks into the substrate. Some technological skill is necessary to make this process sequence successful, as can be seen from the following detailed process description of example 1 in accordance with Fig. 2. This example relates to the development of an additional structure, such as a tip, on an already 3-dimensionally structured substrate, such as a cantilever beam. In this process problems arise for example when the flexible and fragile cantilever beams have to be coated with photoresist for subsequent exposure. These and other problems are solved in that a mask which is applied to a substrate is structured in such a manner that it contains all relevant informations for the subsequent substrate etching process. This means that the structures of all lithography steps are etched one after the other into the mask before substrate etching. Subsequently, this information is transferred step by step from the mask into the substrate. Between two successive substrate etching process steps there is a mask etching step which does not require an additional lithography step however. This multiple step mask can be fabricated in conventional planar technology. A further advantage is that there are no problems with respect to photoresist coverage and exposure as the mask has a thickness of only a few µm. The process benefits from the high selectivity of mask versus substrate in the substrate etching process which can comprise wet and/or dry etching steps, respectively. As shown in Fig. 2a a (100) silicon wafer (41) is bilaterally coated with silicon dioxide. The oxide layers (43) and (42) on the top side and on the bottom side are thermally grown to a layer thickness of about 3 µm. In a first photolithographic step the patterns of cantilever beam (45) and of rectangular openings (46) are defined. For this purpose an about 3 µm thick AZ 1350 positive photoresist layer is bilaterally applied to the oxide coated wafer (not shown). The photoresist layers on both sides are exposed at the same time and developed. The oxide on both sides is etched in 5 : 1 buffered hydrofluoric acid or by reactive ion etching using CF₄ as etch gas and a pressure range of 1 to 10 µbar for a time depending on the desired etch depth on the top side. Next, the top side is protected by a baked photoresist layer, and the oxide residue in the exposed areas (46) on the bottom side of the wafer is removed by etching in 5 : 1 buffered hydrofluoric acid. The resulting structure is shown in Fig. 2a. It is noted that it is extremely important to start with the cantilever beam mask and not with the tip mask, for only the cantilever beam mask can be completely planarized with photoresist. In a second photolithographic step the pattern of the tip is defined in a newly applied photoresist layer over silicon dioxide cantilever pattern (45) (not shown). The photoresist tip pattern is transferred into the silicon dioxide by etching in 5 : 1 buffered hydrofluoric acid or by reactive ion etching. During this etching step the cantilever beam pattern is transferred to a deeper level of layer (43), and the thickness of the remaining silicon dioxide layer (43) is reduced correspondingly. The bottom side of the wafer is protected by a baked photoresist layer during this step. The resulting silicon dioxide mask structure (45, 48) which will then be transferred step by step into the silicon substrate (41) is shown in Fig. 2b. Prior to this mask structure transfer the silicon wafer (41) is thinned down by etching from the bottom side to a thickness which corresponds to about twice the thickness of the cantilever beam plus twice the height of the tip plus about 10 µm residual thickness. This etching step which uses an about 37.5 wt% aqueous KOH solution at about 80°C is anisotropic. The resulting structure is shown in Fig. 2c. Next, as shown in Figs. 2c, d, silicon dioxide layer (43) with structures (45) and (48) is etched in 5 : 1 buffered hydrofluoric acid or by reactive ion etching to such a depth, that the silicon dioxide areas (49) abutting cantilever beam mask (45) are removed. An anisotropic wet etching step with aqueous KOH solution under the aforespecified conditions follows for the transfer of the cantilever beam pattern (45) into the silicon wafer (41). This step removes the areas of silicon wafer (41) originally underlying silicon dioxide areas (49) in a depth which corresponds to the desired silicon cantilever beam thickness. At the same time the wafer is correspondingly thinned down from the bottom side. Now, silicon dioxide cantilever beam mask (45) and remaining silicon dioxide areas (43) are removed by etching in 5 : 1 buffered hydrofluoric acid or by reactive ion etching. The following etching of the tip with a lateral etching speed in 37.5 wt% KOH solution at about 60°C about twice as high as the etching speed in depth is the most time critical step of the whole etching cycle. Therefore, a careful survey by optical inspection is indispensable. The etch depth H tip is given by the empirical formula: At the end of the tip etching the silicon dioxide tip mask (48) falls off silicon tip (410). The tip etching is shown in Fig. 2e. The remaining silicon membrane (41) in the areas (49) is now etched from the bottom side of the wafer. This etching step comprises reactive ion etching, using CF₄ as etch gas and a pressure of about 10 µbar, without affecting the top side of the silicon structure. Finally, a small piece of the wafer is cut out for mounting the cantilever on a piezoelectric bimorph as shown in Fig. 1. The aforedescribed etching process provides for a micromechanical single crystal silicon structure consisting of a cantilever beam with an integrated tip pointing into the (100) direction. The tip radius is < 10 nm, a value which has never been attained before. The cantilever beam thickness is in the 1 µm to 20 µm range, and the cantilever beam spring constant in the 1 N/m to 100 N/m range. Cantilevers with these properties are preferably used in the AFM. A second example describes a process for making monocrystalline monolithic silicon tips. The respective tips can be made with a height of about 20 µm or 2 µm, depending on the orientation of the tip. For profiling sample surfaces with a STM these tips have to be spaced very closely in relation to the sample surface. The tip should quite clearly protrude from its mounting in order to avoid contact between sample and mounting elsewhere. Therefore, it is desirable to set these tips e. g. on a pedestal. To realize this an about 2 µm thick silicon dioxide layer is thermally grown on a (100) silicon wafer. In a first photolithographic step 500 µm diameter discs are defined in the silicon dioxide layer in an array. These discs are to form the etch masks for the silicon pedestals. The oxide is etched in 5 : 1 buffered hydrofluoric acid to a depth of about 1.1 µm. In a second photolithographic step 80 µm diameter discs are defined in the silicon dioxide overlying the 500 µm diameter discs. These discs of smaller diameter are to form the etch masks for the silicon tips. The oxide is etched in 5 : 1 buffered hydrofluoric acid to a depth of about 1.1 µm. The resulting silicon dioxide mask which corresponds to the mask shown in Fig. 2b of the previous example will now be transferred step by step into the silicon substrate. In a first step the pedestal is etched into the wafer to a depth of e. g. 150 µm. This step comprises anisotropic wet etching with aqueous KOH solution. Next, the mask for the pedestal (first level of information of the silicon dioxide mask) is removed by etching in 5 : 1 buffered hydrofluoric acid. Should the tolerance requirements for the second level of information of the mask (tip mask) be very high the first level of information can be removed by anisotropic reactive ion etching. In a second step the tip is etched into the already existing silicon pedestal. This anisotropic etching step which uses an aqueous 37.5 wt% KOH solution at about 60°C is discontinued when the 80 µm silicon dioxide discs are completely undercut. As the undercut etch rate of the aforementioned 37.5 wt% KOH solution at about 60°C is about twice as high as the etch rate in (100) direction the complete undercut is obtained at an etch depth which roughly corresponds to about a quarter of the disc diameter. The etching conditions imply that the high concentration of the KOH solution is responsible for the low etch rate in (100) direction, compared with other directions. The etch temperature is not critical with respect to the etch rate ratio. The complete undercut of the tip mask (second level of information of the silicon dioxide mask) results in a silicon tip with an orientation in the slow etching (100) direction, which tip is bounded by fast etching surfaces (see Fig. 2e of the previous example). Due to the sharp taper angle of the tip of about 45° the overetching results in a fast shortening of the tip. Therefore, the maximum overetching time has to be carefully tuned to the disc diameter. The tip of this example has a height of about 20 µm and a radius of about < 10 nm which is an excellent structure for obtaining high quality STM images. For the STM profilometry the tips made in accordance with this invention may carry a metallic coating.

Claims: Method of producing micromechanical sensors for the AFM/STM profilometry, which consist of a cantilever beam with a tip at its end and a mounting block at the opposite, comprising the following steps: 1. bilaterally coating a wafer substrate (41) with a layer of inorganic material (43, 42); 2. producing a mask for the desired cantilever beam pattern (45) on the top side of the wafer (41) and in the upper part of said layer (43), and a mask in said layer (42) on the bottom side of the wafer, using a first photolithographic step and an etching step; 3. producing a mask for the desired tip pattern (48) in the area of the cantilever beam pattern (45), using a second photolithographic step and an etching step, and simultaneously transferring the cantilever beam pattern (45) into a deeper level of said layer (43); 4. transferring the cantilever beam pattern (45) and tip pattern (48) into the wafer substrate (41) by a) etching said layer (43) to such a depth, that the areas (49) of said layer (43) abutting cantilever beam mask (45) are removed; b) anisotropic wet etching of the wafer substrate (41) to a depth which corresponds to the desired cantilever beam thickness; c) removing of cantilever beam mask (45) and remaining areas of said layer (43) on wafer substrate (41) by etching; d) shaping of tip (410) by anisotropic wet and undercut etching of tip mask (48), and simultaneously transferring the cantilever beam pattern into a deeper level of wafer substrate (41). Method of claim 1, wherein a silicon dioxide layer (43, 42) is thermally grown on both sides of a monocrystalline (100) silicon wafer substrate (41) to a layer thickness of about 3 µm. Method of claim 1, wherein the cantilever beam pattern defined in the first photolithographic step in an about 3 µm thick photoresist layer on silicon dioxide layer (43) is transferred into the upper part of said silicon dioxide layer (43) by wet etching with 5 : 1 buffered hydrofluoric acid to a depth of about 0.3 µm. Method of claims 1 and 3, wherein concurrently with the etching of the silicon dioxide layer (43) on the top side rectangular patterns (46) are etched to the corresponding depth into the silicon dioxide layer (42) on the bottom side, and, after protecting the top side by a photoresist layer, the silicon dioxide remaining in said areas (46) is removed by etching in 5 : 1 buffered hydrofluoric acid. Method of claim 1, wherein the tip pattern defined in the second photolithographic step in a photoresist layer within the area of cantilever beam pattern (45) is transferred into the silicon dioxide layer in said area by wet etching with 5 : 1 buffered hydrofluoric acid, and the cantilever beam pattern (45) is simultaneously transferred into a deeper level of said layer (43). Method of claim 1, wherein after removal of the silicon dioxide in the areas (49) by wet etching with 5 : 1 buffered hydrofluoric acid the cantilever beam is anisotropically etched into the silicon wafer substrate (41) using said mask (45) and an aqueous KOH solution (37.5 wt%) at about 80°C. Method of claims 1 and 6, wherein subsequently to the etching of the silicon cantilever beam the silicon dioxide cantilever beam mask (45) is removed by etching with 5 : 1 buffered hydrofluoric acid, and next the tip 410 is anisotropically etched into the silicon wafer substrate within the area of the cantilever beam using the tip mask (48) and an aqueous KOH solution (37.5 wt%) at about 60°C. Method of one or several of claims 1 to 7, further comprising the steps of thinning down the silicon wafer substrate (41) prior to the mask structure (45, 48) transfer into said silicon wafer substrate (41), and further during the etching of the silicon cantilever beam and the silicon tip by anisotropic etching from the bottom side of the wafer using the bottom side mask (46) and an aqueous KOH solution at about 60 to 80°C. Method of one or several of claims 1 to 8, wherein the silicon membrane remaining in the areas (49) is removed from the bottom side of the wafer by reactive ion etching with CF₄ as etch gas and a pressure of about 10 µbar, thereby exposing the silicon cantilever beam with the tip as an integral part. Method of one or several of claims 1 to 9, wherein a small piece of the wafer is cut out for mounting the cantilever beam-and-tip assembly on a piezoelectric bimorph (Fig. 1). Method of claim 1, further comprising 1. defining discs of a first diameter in a silicon dioxide layer on the top side of a silicon wafer substrate, which discs are to form the masks for the etching of pedestals into the silicon wafer substrate, using the first photolithographic step and etching; 2. defining discs of a second smaller diameter in the silicon dioxide layer overlying said discs of a first diameter and within the area of said discs, which discs are to form the masks for the etching of tips into the silicon wafer substrate, using the second photolithographic step and etching; 3. anisotropically etching the pedestals into the silicon wafer substrate, using the discs of the first diameter as masks and an aqueous solution of KOH (37.5 wt %) at about 60°C; 4. removing the level of the masks for etching the pedestals by isotropic etching with 5 : 1 buffered hydrofluoric acid or by anisotropic reactive ion etching; 5. anisotropically etching the tips into the already existing silicon pedestals, using the discs of the second smaller diameter as masks and an aqueous solution of KOH (37.5 wt%) at about 60°C. Method of claim 11, wherein discs of a diameter of 500 µm and subsequently discs of a diameter of 80 µm are defined in the silicon dioxide layer; and pedestals are etched into the silicon wafer substrate to a depth of about 150 µm, using said 500 µm discs as masks, and subsequently tips into the pedestals, using said 80 µm discs as masks, and for a time sufficient for the complete undercut of said 80 µm discs. Multilevel mask for etching in accordance with claim 1 a multilevel structure, such as a cantilever beam with integrated tip, into a substrate, characterized by a first mask level containing the information for the cantilever beam to be etched, and a second mask level containing the information for the tip to be developed on said cantilever beam. Multilevel mask for etching in accordance with claim 11 a multilevel structure, such as a pedestal with integrated tip, into a substrate, characterized by a first mask level containing the information for the pedestal to be etched, and a second mask level containing the information for the tip to be developed on said pedestal. Micromechanical sensor for the AFM/STM profilometry comprising a cantilever beam carrying at one end a tip for the interaction with the surface of a sample to be profiled, and carrying a mounting block at the opposite end distant from said tip, characterized in that said cantilever beam, said mounting block, and said tip form one integral part micromechanically manufactured from one piece of material.

Inventors: BAYER, THOMAS, GRESCHNER, JOHANN, DR. DIPL.-PHYS., KRAUS, GEORG, WEISS, HELGA, WOLTER, OLAF, DR. DIPL.-PHYS.
Applicants: INTERNATIONAL BUSINESS MACHINES CORPORATION
Application year: 1989
Main classification: G01N27
IPC codes: B81C1, H01J37, G02B21, G01N27, H01L41, G01B7, H01L21, C23F1, G01Q70