LSI semiconductor device

Abstract: A semiconductor device having CMOS transistors and bipolar transistors is disclosed. A P-type high con­ centration buried region (16a) is formed in the surface region of the semiconductor substrate (10). An N-type epitaxial layer is formed on the buried region (16a). The semiconductor device includes a second well region (15) of a PMOS transistor that is formed by introducing an N-type impurity into a part of the epitaxial layer, and a first well region (14) of a bipolar transistor that is formed without introducing the N-impurity, after the formation of the epitaxial layer.

Description: The present invention relates to a semiconductor device forming an LSI (large scale integrated circuit) containing bipolar transistors and CMOS transistors. A semiconductor device of the type in which bipolar transistors and CMOS transistors are formed in a semiconductor substrate, conventionally, is formed in the following way. An N + buried regions are selectively formed in a p-type silicon substrate. A P-type epitaxial layer of 2.0 to 5.0 µm thick is selectively formed over the entire surface of the structure. N-well regions are formed in bipolar transistor forming region and PMOS transistor forming region. P-well regions are formed in NMOS transistor forming region and bipolar transistor isolating region. In forming the P-well and N-well regions, an ion implanting method and a lithography method are used for selective doping of impurities. Then, the structure is annealed at 1100°C or more for well diffusion. Thereafter, MOS transistors and bipolar transistor are formed in a usual manner. Fig. 1 shows a sectional view of an LSI structure containing bipolar transistors and CMOS transistors that are formed by a conventional technique. Fig. 2 shows a profile of a distribution of impurity concentration in the N-well region for bipolar transistor and PMOS transistor. Fig. 3 shows a profile of a distribution of impurity concentration in the P-well region for NMOS transistor. In Fig. 1, reference numeral 51 designates P-type semiconductor substrate; 52 an N + buried region; 53 and 57 N-well regions; 54 element insulating region; 55 N + buried lead electrode; 56 a P-well; 58 a gate oxide film; 59 a gate polycrystalline silicon layer; 60 an interlaying insulating film; 61 an emitter polycrystalline silicon layer; 62 an N + emitter region; 63 internal base region; 64 a P field layer; 65 an N - region of the LDD structure; 66 an N + region; 67 a P + region; 68 an external base region; 69 a side wall for forming the N + region; 70 an interlaying insulating film; and 71 an aluminum (Aℓ) electrode. In the LSI structure manufactured by the conventional technique, as the microfabrication of the MOS transistors further progresses, a concentration in the N-well region 57 of the PMOS transistor is increased in order to prevent occurrence of a short channel effect of the MOS transistor, for example. When a bipolar transistor is formed in the N-well region 53 that is formed simultaneously with the N-well region 57. An impurity concentration in the collector of the bipolar transistor increases. When the impurity concentration of the collector of the bipolar transistor increases, a breakdown voltage BV CB0 between the base and collector of the transistor and an early voltage V AF , which are fundamental performances of the bipolar transistor, are degraded. When the PMOS-FET gate length becomes shorter than 0.8 µm, the degradation occurs. When using the conventional technique, a P-type epitaxial layer is first formed, and the N-well regions 53 and 57 are formed in the epitaxial layer. In this case, the N-wells 53 and 57 must have impurity concentration profiles required for the PMOS transistor and the bipolar transistor. To this end, a well diffusion process is performed. When the well diffusion process is used, P + buried region must be formed in the P-well region 56 in order to prevent occurrence of a punch-through in that region . In the structure containing the P + buried region when the well diffusion process progresses, impurities are actively diffused from the buried region toward the region located above the buried region. Such a diffusion will have an adverse effect on the characteristics of the MOS transistor. For the above reason, there is a limit increasing an impurity concentration of the P + buried region. When the well diffusion process is used for forming the collector of the bipolar transistor, a profile of an impurity concentration of the collector of the transistor has an inclination declining from the surface of the collector to the innards. Therefore, the bipolar characteristic is degraded in a high current region. EP-A-0 219 831 shows a Bicmos device with a P-well used as a substrate region for an N-channel MOS transistor. WO96/02202 shows a buried layer below a depletion region to prevent soft errors. The buried layer is formed by implantation of impurities. Accordingly, an object of the present invention is to provide a semiconductor device which can provide improved electric characteristics of bipolar transistors and MOS transistors even if those different types of transistors are formed in the same semiconductor substrate, and has a high soft error resistance. According to an embodiment of the present invention, there is provided a semiconductor device as set out in claim 1. A method of manufacturing a semiconductor device according to the present invention is set out in claim 4. This invention can be more fully understood from the following detailed description when taken in conjunction with the accompanying drawings, in which: Fig. 1 shows a sectional view of a conventional LSI in which bipolar transistors and CMOS transistors coexist; Fig. 2 is a graph showing a profile of an impurity concentration in the N-well region for the bipolar and PMOS transistors; Fig. 3 is a graph showing a profile of an impurity concentration in the P-well region for the NMOS transistors; Figs. 4A through 4J are sectional views showing a manufacturing process for manufacturing a semiconductor device as an example described for better understanding of the present invention; Fig. 5 is a graph showing a profile of an impurity concentration in an N-well region for a PMOS transistor shown in Fig. 4J; Fig. 6 is a graph showing a profile of an impurity concentration in a P-well region for an NMOS transistor shown in Fig. 4J; Fig. 7 is a graph showing a profile of an impurity concentration in a first well region for a bipolar transistor shown in Fig. 4J; Figs. 8A through 8J are sectional views showing a manufacturing process for manufacturing a semiconductor device according to an embodiment of the present invention; Fig. 9 is a graph showing a profile of an impurity concentration in a second N-well region of a PMOS transistor in a peripheral portion shown in Fig. 8J; Fig. 10 is a graph showing a profile of an impurity concentration in a P-well region for an NMOS transistor in a memory cell portion shown in Fig. 8J; Fig. 11 is a graph showing a profile of an impurity concentration in a first well region for a bipolar transistor in the peripheral circuit shown in Fig. 8J; and Fig. 12 is a graph showing a profile of an impurity concentration in a P-well region of an NMOS transistor in the peripheral portion shown in Fig. 8J. Figs. 4A through 4J show a sequence of process steps of a method of forming a semiconductor device according to an example described for better understanding of the present invention. To start, an insulating film 11 is deposited on the crystal surface of a P-type silicon semiconductor substrate 10. The crystal indices of the crystal surface is (100). The insulating film 11 is selectively etched away by a photoetching method, to form openings 12. The openings 12 define the locations at which N + buried collector regions 13 and 13a are to be formed. Subsequently, to form the N + buried collector regions 13 and 13a, antimony Sb is vapor phase diffused into the surface region of the substrate 10 through the openings 12. Alternatively, arsenic As or Sb is ion implanted through the openings 12. See Fig. 4A. The remaining insulating film 11 is completely removed. After the removal of the film 11, boron B is ion implanted into the surface regions of the substrate 10 except the N + buried collector regions 13 and 13a, thereby to form P+ buried regions 16a, by using a photoetching method. The condition of the ion implantation of boron B is, for example, 100 KeV of accelerating voltage and 1.5 × 10 13 cm -2 of dosage. See Fig. 4B. The N + buried collector regions 13 and 13a and the P + buried region 16a may be formed by using a self-align method. Thereafter, an N-type epitaxial layer 14 containing phosphorus P of 1 × 10 16 cm -3 is formed over the entire surface of the substrate 10 by an epitaxial growth method. Temperature for the epitaxial growth is 1130°C. The thickness of the layer 14 is 1.2 µm. See Fig. 4C. A mask (not shown) for ion implantation is formed by a photoetching method. By using this mask, phosphorus P ions are doped into regions of the N-type epitaxial layer 14 in which PMOS transistors are to be formed. As a result, N-well regions 15 are selectively formed. In this case, the P ions are accelerated at 160 KeV and 5 × 10 12 /cm 2 of dosage. Then, by using another mask for ion implantation, boron B ions are doped into regions of the N-type epitaxial layer 14 in which NMOS transistors are to be formed. As a result, P-well regions 16 are selectively formed. In this case, the P ions are accelerated at 100 KeV and 6 × 10 12 /cm 2 of dosage. See Fig. 4D. In this process step, the formation of the N-well region 15 follows the formation of the P-well region 16. Succeedingly, field oxide films 17 to isolate MOS transistors from one another and MOS transistors from bipolar transistors are formed by a selective oxidizing method. The thickness of the field oxidizing film 17 is approximately 6000 Å. Before formation of the field oxide films 17, an ion doping region 18 for preventing a field inversion is formed in a self-align manner. A dummy gate oxide film 19 of 150 Å in thick is formed over the entire surface of the structure by thermal oxidization. Thereafter, channel ion doping regions 20 and 21 that are for making uniform the threshold values of P- and N-channel MOS transistors and for preventing occurrence of punch-through phenomenon, are respectively formed in the surface regions of the N- and P-well regions 15 and 16, through the dummy gate oxide film 19. To form the channel ion doping region 20 for the N-well region 15, B ions are first implanted at 20 KeV of acceleration voltage and 3 × 10 12 /cm 2 of dosage. Then, P ions are doped at dosage of 2 × 10 12 /cm 2 under acceleration voltage of 240 KeV. To form the channel ion doping region 21 for the N-well region 16, B ions are first implanted at 20 KeV of acceleration voltage and 4 × 10 12 /cm 2 of dosage. Then, P ions are doped at dosage of 1 × 10 16 /cm 2 under acceleration voltage of 320 KeV, thereby to form a deep N + type ion doping region 22 that passes through the epitaxial layer 14 and reaches the buried collector region 13. See Fig. 4E. Then, the dummy gate oxide film 19 is completely removed, and a gate oxide film 23 of about 150 Å in thick is formed over the entire surface of the structure by an oxidizing process. Further, polycrystalline silicon is deposited over the entire surface of the structure by CVD (chemical vapor deposition), thereby to form a polycrystalline silicon layer 24 of a predetermined thickness. Subsequently, phosphorus P is diffused into the polycrystalline silicon layer 24, thereby to lower a resistance of the layer 24. See Fig. 4F. The polysilicon layer 24 and the gate oxide film 23 are patterned by a photoetching process, while leaving the gate electrodes and the N-well regions of the MOS transistors on the N-well regions 15 and the P-well regions 16. The structure is placed in an oxygen atmosphere and heated at 900°C, to form a post oxide film 50 over the entire surface of the structure. The entire surface of the structure is coated with photoresist to form a photoresist film. Then, the photoresist film is patterned to expose predetermined regions. Succeedingly, with a mask of the field oxide films 17 and the gate electrodes, BF 2 + ions are doped into the N-well region at the acceleration voltage of 50 KeV and the dosage of 5 × 10 15 /cm 2 , so that a P + -type and a drain region 26 are formed in the surface region of the N-well region 15. At this time, BF 2 + ions are doped into the N-type epitaxial layer 14 on the buried collector region 13, to form an external base region 27 of a bipolar transistor. Further, with a mask of the field oxide film 17 and the gate electrode, phosphorus ions are implanted into the P-well region 16 under the condition of 60 KeV of acceleration voltage and 4 × 10 13 /cm 2 , to form an N-type source region 28 and a drain region 29 in the surface region. See Fig 4G. The entire surface of the structure is covered with a CVD-SiO 2 film 30 of 2000 Å. The CVD-SiO 2 film 30 is selectively etched away, leaving the film 30 on only the side wall of the gate electrode. For the etching, an anisotropy etching process such as RIE (reactive ion etching) process. A photoresist mask (not shown) is formed allowing only the P-well region to be exposed. The P-well region 16 is doped with arsenic As ions under the condition of 50 KeV of acceleration energy and 5 × 10 15 /cm 2 of dosage, so that an N + -type source region 31 and a drain region 32 are formed in the surface region of the P-well region 16. In this way, an N-channel MOS transistor of the so-called LDD structure is formed in this P-well region 16. After the photoresist mask (not shown) is removed, the structure is placed in an O 2 atmosphere and heated at 900°C for 30 minutes. As a result, a post-oxide film 33 is formed. Then, the surfaces of the P-well region 16 and the N-well region 15 are covered with a photoresist 51. Following this, BF 2 ions are implanted into the N-epitaxial layer 14 on the buried collector region 13, under the condition of 30 KeV of acceleration energy and 5 × 10 13 /cm 2 of dosage. By this doping of BF 2 , a P-type internal base region 34 is formed in the N-type epitaxial layer 14 on the buried collector region 13. See Fig. 4H. SiO 2 is deposited over the entire surface of the structure, to form a CVD-SiO 2 film 35 of 2000 Å thick as an interlaying insulating film. The CVD-SiO 2 film 35 is selectively etched away to form a contact hole 36 reaching the surface of the internal base region 34, and a contact hole 37 reaching the surface of the N + -type drain region 32 for the N-channel MOS transistor. Thereafter, polycrystalline is deposited to form a polycrystalline layer of 2000 Å. The polycrystalline layer is patterned while polysilicon layers at only the locations where the emitter electrode and high resistance element, and interconnection wires are to be formed, and those polysilicon layers are denoted as 38 and 39. After the polycrystalline layer 39 is partially covered with a mask 40 of photoresist, As ions are implanted into the polycrystalline layers 38 and 39 at 50 KeV and 5 × 10 15 /cm 2 , to form an N-type emitter region 41 in the internal base region 34. At the same time, a resistance of the polycrystalline silicon layer 38 is reduced to form an emitter electrode of the bipolar transistor. A resistance of the polycrystalline silicon layer 39 except a portion of it covered with the mask 40 is reduced to form a drain interconnection 39 and a high resistance element 42. To secure better contact characteristics, the structure is preferably subjected to a called rapid anneal after the above ion implantation. In the anneal, the structure is heated to between 950°C to 1100°C for 5 seconds to one minutes. See Fig. 4I. To flatten the surface of the structure, an interlaying insulating film 43 including a CVD-SiO 2 film and a BPSG film is formed over the entire surface of the structure. The interlaying insulating film 43 is opened to a contact hole 44 reaching to the surface of the polycrystalline silicon layer 38 as the emitter electrode, a contact hole 45 that reaches the surface of the polycrystalline silicon layer 39 as the drain electrode, and a contact hole 46 that passes the interlaying insulating film 43 and the CVD-SiO 2 film 35 underlying the film 43 and reaches the surface of the source of the P-channel MOS transistor. Aluminum for interconnection is deposited over the entire surface of the structure, and is patterned to form aluminum interconnections 47, 48 and 49. See Fig. 4J. In the semiconductor device thus manufactured, a part of the polycrystalline silicon layer 39 serves as a high resistance element 42, which is to be used as a load resistor of a static memory cell. In the above-mentioned embodiment, the LDD structure is employed for the N-channel MOS transistor, and the normal structure for the P-channel MOS transistor. It is evident that an appropriate structure may be used according to the size of the element. Impurity distributions in the N-well region and in the P-well region of the MOS transistor portion thus structured are shown in Figs. 5 and 6, and an impurity distribution in the N-well region of the bipolar transistor portion is shown in Fig. 7. The advantages of the semiconductor device thus structured as shown in Fig. 4J will be described below. Figures of the characteristics of a conventional bipolar CMOS transistor of 0.8 µ or less in gate length and of h fe (current multification factor) are unsatisfactory and: BV CBO (base - collector breakdown voltage) = 15 V; BV CEO (emitter - collector breakdown voltage) = 5 V; V AF (early voltage) = 10 V; and f T (cut-off frequency) = 1 GHz when Ic (collector current) = 10 mA. This is due to the fact that an impurity concentration in the N-well region as the collector layer 63 is high, and therefore, the impurity concentration is distributed such that it gradually decreases from the surface of the N-well layer 63 toward the innards of the layer 63, viz., an inclination exists in a profile of the impurity concentration. In a bipolar CMOS transistor of the same specified values that has a structure according to the present invention, the corresponding characteristics are improved as follows: BV CBO = 41 V; BV CEO = 13 V; V AF = 51 V; and f T = 3 GHz when Ic = 10 mA. This is due to the fact that the N-type epitaxial layer as the collector layer 14 is intact, and an impurity concentration therein is low and uniformly distributed in the layer, viz, no inclination exists in the impurity concentration profile. Further, in the above semiconductor device, the P-well region 16 forming an NMOS transistor is formed by ion implantation, and a subsequent annealing applied to it is performed at low temperature and for a short time, so as to prevent the impurity from being diffused from the N + region 16a to the well region 16. Accordingly, a high performance MOS transistor having a gate length of 0.8 µm or less can be provided. Furthermore, an impurity concentration in the D + buried layer 16a' may be set to be high, and therefore the resultant semiconductor device is insensitive to soft error. Therefore, the above semiconductor device is suitable for a device of the type in which any soft error must be prevented from occurring, such as memory LSIs. When an epitaxial layer (first N-well region) to form a bipolar transistor in a semiconductor device, is formed, a concentration of an impurity in the epitaxial layer is preferably set to between 5 × 10 15 cm -3 to 2 × 10 16 cm -3 . In the above semiconductor device, the epitaxial layer is followed by ion implantation to form a second N-well region in a region in which a PMOS transistor is to be formed, and another ion implantation to form a P-well region in a region in which an NMOS transistor is to be formed. In this case, an impurity concentration in each of those wells is preferably set to between 4 × 10 16 cm -3 to 2 × 10 17 cm -3 . In the case of a device of the type in which soft error must be prevented, such as a memory LSI, an impurity concentration in the P + buried region 16a' is in the range of 1 × 10 16 cm -3 to 5 × 10 17 cm -3 as practically preferable values. Further, the anneal following the formation of the epitaxial layer at 1050°C is limited within 10 minutes in order to prevent the impurity being diffusing from the P + region 16 to the P-well region of the NMOS transistor. An embodiment of a semiconductor device according to the present invention will be described with reference to Figs. 8A through 8J, showing a sequence of process steps of a method of forming a semiconductor device according to said embodiment of the present invention. To start, an insulating film 11 is deposited on the crystal surface of a P-type silicon semiconductor substrate 10. The crystal indices of the crystal surface is (100). The insulating film 11 is selectively etched away by a photoetching method, to form openings 12a, 12b, and 12c. The openings 12 define the locations at which N + buried regions 13a, 13b and 13c are to be formed. Subsequently, the N + buried regions 13a, 13b and 13c are formed by introducing antimony Sb into the surface region of the substrate 10 exposed by the openings 12a, 12b and 12c using vapor phase diffusion method or solid diffusion method. Alternatively, arsenic As or Sb is ion implanted into the surface region of the substrate 10 exposed by the same openings. See Fig. 8A. The remaining insulating film 11 is completely removed. After the removal of the film 11, boron B + is ion implanted into the entire surface of the wafer under the condition of 100 KeV of acceleration voltage and 6 × 10 12 cm 2 of dosage, thereby to form first P + buried regions 9a, 9b and 9c whose impurity concentrations are in the range of 1 × 10 16 cm -3 to 7 × 10 16 cm -3 . Then, by photo etching process, B + ions are doped into only a region in which a memory cell array is to be formed. The condition of the ion implantation is 100 KeV of accelerating voltage and 3 × 10 13 cm -2 of dosage, for example. The implantation forms a second P + buried region of a high concentration of 8 × 10 16 cm -3 to 1 × 10 18 cm -3 . See Fig. 8B. To prevent the structure from contamination during the ion implantation is performed, the entire surface of the substrate may be coated with an oxide film of 50 Å before the formation of the first and second P + buried regions 8 and 9a to 9c of high impurity concentration. After the ion implantation, the structure may be annealed at at least 850°C, in order to cure the damages of the substrate caused by the ion implantation and activate the doped impurity. Further, the first P + buried regions 9a, 9b and 9c of high impurity concentration, that are formed by doping the impurity into the entire surface of the structure, may be formed by selectively doping the same. The second P + buried region 8 may be formed apart from the N + buried region 13c by at least 2 µm. Such a distance is provided preventing from decreasing the withstand voltage between P + buried region 8 and N + buried region 13c. Thereafter, an N-type epitaxial layer 14 containing phosphorus P of 5 × 10 15 cm -3 to 2 × 10 16 cm -3 is formed over the entire surface of the substrate 10 by an epitaxial growth method. Temperature for the epitaxial growth is 1130°C. The thickness of the layer 14 is 1.2 µm. See Fig. 8C. A mask (not shown) for ion implantation is formed by a photoetching method. By using this mask, phosphorus P ions are doped into regions of the N-type epitaxial layer 14 in which PMOS transistors or PMOS transistors are to be formed. As a result, N-well regions 15a and 15b of impurity concentration of about 2 × 10 16 cm -3 are selectively formed. In this case, the P ions are accelerated at 160 KeV and 5 × 10 12 /cm 2 of dosage. Then, by using another mask for ion implantation, boron B ions are doped into regions of the N-type epitaxial layer 14 in which NMOS transistors of the CMOS transistors and NMOS transistors in a memory cell portion are to be formed. As a result, P-well regions 16a and 16b of impurity concentration of about 2 × 10 16 cm -3 to 2 × 10 17 cm -3 are selectively formed. In this case, the P ions are accelerated at 100 KeV and 6 × 10 12 /cm 2 of dosage. See Fig. 8D. In this process step, the formation of the N-well region 15a to 15c follows the formation of the P-well region 16a to 16c. Succeedingly, field oxide films 17 to isolate MOS transistors from one another and MOS transistors from bipolar transistors are formed by a selective oxidizing method. The thickness of the field oxidizing film 17 is approximately 6000 Å. Before formation of the field oxide films 17, an ion implanting region 18 for preventing a field inversion is formed in a self-align manner. A dummy gate oxide film 19 of 150 Å in thick is formed over the entire surface of the resultant structure by thermal oxidization. Thereafter, channel ion implanting regions 20 and 21 that are for making uniform the threshold values of P- and N-channel MOS transistors and for preventing occurrence of punch-through phenomenon, are respectively formed in the surface regions of the N- and P-well regions 15a and 15b and 16a and 16b, through the dummy gate oxide film 19. To form the channel ion doping region 20 for the N-well region 15a and 15b, B ions are first implanted at 20 KeV of acceleration voltage and 3 × 10 12 /cm 2 of dosage. Then, P ions are doped at dosage of 2 × 10 12 /cm 2 under acceleration voltage of 240 KeV. To form the channel ion doping region 21 for the N-well region 16a and 16b, B ions are first implanted at 20 KeV of acceleration voltage and 4 × 10 12 /cm 2 of dosage. Then, P ions are doped at dosage of 1 × 10 16 /cm 2 under acceleration voltage of 320 KeV, thereby to form a deep N + type ion doping region 22 that passes through the epitaxial layer 14 and reaches the buried collector region 13b. See Fig. 4E. Then, the dummy gate oxide film 19 is completely removed, and a gate oxide film 23 of about 150 Å in thick is formed over the entire surfaces of the gate oxide film 23 and the field oxide film 17 by an oxidizing process. Further, polycrystalline silicon is deposited over the entire surface of the structure by CVD (chemical vapor deposition), thereby to form a polycrystalline silicon layer 24 of a predetermined thickness. Subsequently, phosphorus P is diffused into the polycrystalline silicon layer 24, thereby to lower a resistance of the layer 24. See Fig. 8F. The polysilicon layer 24 and the gate oxide film 23 are patterned by a photoetching process, to form the gate electrodes 24 of the MOS transistors on the N-well regions 15a and 15b and the P-well regions 16a and 16b. The structure is placed in an oxygen atmosphere and heated at 900°C, to form a post oxide film 50 over the entire surface of the structure. Succeedingly, with a mask formed by photo etching, and a mask of the field oxide films 17 and the gate electrodes, BF 2 + ions are doped into the N-well region at the acceleration voltage of 50 KeV and the dosage of 5 × 10 15 /cm 2 , so that a P + -type and a drain region 26 are formed in the surface region of the N-well region 15. At this time, BF 2 + ions are doped into the N-type epitaxial layer 14 on the buried collector region 13b, to form an external base region 27 of a bipolar transistor. Further, with a mask formed by photo etching, and a mask of the field oxide film 17 and the gate electrode, phosphorus ions are implanted into the P-well region 16a and 16b under the condition of 60 KeV of acceleration voltage and 4 × 10 13 /cm 2 , to form an N - type source region 28 and a drain region 29 in the surface region. See Fig 8G. The entire surface of the structure is covered with a CVD-SiO 2 film 30 of 2000 Å. The CVD-SiO 2 film 30 is selectively etched away, leaving the film 30 on only the side wall of the gate electrode. For the etching, an anisotropy etching process such as RIE (reactive ion etching) process. A photoresist mask (not shown) is formed allowing only the P-well region to be exposed. The P-well regions 16a and 16b are doped with arsenic As ions under the condition of 50 KeV of acceleration energy and 5 × 10 15 /cm 2 of dosage, so that an N + -type source region 31 and a drain region 32 are formed in the surface regions of the P-well regions 16a and 16b. In this way, an NMOS transistor of the so-called LDD structure is formed in this P-well regions 16a and 16b. The structure is placed in an O 2 atmosphere and heated at 900°C for 30 minutes. As a result, a post-oxide film 33 is formed. Then, the surfaces of the P-well region 16a and 16b and the N-well regions 15a and 15b are covered with a photoresist 51. Following this, BF 2 ions are implanted into the N-epitaxial layer 14 on the buried collector region 13b, under the condition of 30 KeV of acceleration energy and 5 × 10 13 /cm 2 of dosage. By this doping of BF 2 , a p-type internal base region 34 is formed in the N-type epitaxial layer 14 on the buried collector region 13. See Fig. 8H. A CVD-SiO 2 film 35 of 2000 Å thick as an interlaying insulating film is formed over the entire surface of the resultant structure. The CVD-SiO 2 film 35 is selectively etched away to form a contact hole 36 reaching the surface of the internal base region 34, and a contact hole 37 reaching the surface of the N + -type drain region 32 for the N-channel MOS transistor in the memory cell portion. Thereafter, a polycrystalline layer of 2000 Å is formed over the entire surface of the resultant structure. The polycrystalline layer is patterned. Those portions of the polysilicon layers where the emitter electrode and high resistance element, and interconnection wires are to be formed, are left. These polysilicon layers are denoted as 38 and 39. After the polycrystalline layer 39 is partially covered with a mask 40 of photoresist, As ions are implanted into the polycrystalline layers 38 and 39 at 50 KeV and 5 × 10 15 /cm 2 to form an N-type emitter region 41 in the internal base region 34. At the same time, a resistance of the polycrystalline silicon layer 38 is reduced to form an emitter electrode of the bipolar transistor. A resistance of the polycrystalline silicon layer 39 except a portion of layer 39 it covered with the mask 40 is reduced to form a drain interconnection, a polycrystalline silicon 39 in the portion covered with the mask 40, and a high resistance element 42. To secure better contact of the emitter electrode of the bipolar transistor and the drain interconnection of the N-channel MOS transistor, the structure is preferably subjected to a called rapid anneal after the above ion implantation. In the anneal, the structure is heated to between 950°C to 1050°C for 5 seconds to one minutes. See Fig. 8I. To flatten the surface of the structure, an interlaying insulating film 43 including a CVD-SiO 2 film and a BPSG film is formed over the entire surface of the structure. The interlaying insulating film 43 is opened to a contact hole 44 to expose a part of the surface of the polycrystalline silicon layer 38 as the emitter electrode, a contact hole 45 that exposes a part of the surface of the polycrystalline silicon layer 39 as the drain electrode, and a contact hole 46 that passes the interlaying insulating film 43 and the CVD-SiO 2 film 35 underlying the film 43 and exposes a part of the surface of the source of the P-channel MOS transistor. Aluminum for interconnection is deposited over the entire surface of the structure, and is patterned to form aluminum interconnections 47, 48 and 49. See Fig. 8J. In the semiconductor device thus manufactured, a part of the polycrystalline silicon layer 39 serves as a high resistance element 42, which is to be used as a load resistor of a static memory cell. A profile of impurity distribution in the N-well region 15a of the PMOS transistor is shown in Fig. 9. A profile of impurity distribution in the P-well region 16b of the NMOS transistor in the memory cell portion is shown in Fig. 10. A profile of impurity distribution in the P-well region 16a of the NMOS transistor in the peripheral circuit portion is shown in Fig. 12. As seen from the foregoing description, in a semiconductor device according to the present invention, the P + region 9c is interlaid between the P + region 8 and the N + region 13c, and an impurity concentration of the region 9c is lower than that in the region 8. Therefore, a breakdown voltage between the regions 8 and 13c is improved. The impurity concentration in the P + region 8 is set at a value between 8 × 10 16 cm -3 to 1 × 10 18 cm -3 . With this feature, a static RAM of soft error resistance of 10 FIT could be realized according to the present invention. This figure should be compared with 10,000 FIT of the conventional RAM. As a modification of the present invention, the LDD structure is employed for the N-channel MOS transistor, and the normal structure for the P-channel MOS transistor. It is evident that an appropriate structure may be used according to the size of the element. The side wall used when the LDD structure is formed may be made of polysilicon. The formation of the source region 25 and the drain region 26 may follow the formation of the source regions 16 and 31 and the drain region 32. The thickness of the epitaxial layer 14 in which an LSI is formed is preferably 1.5 µm or less. An impurity concentration in this epitaxial layer is set to between 5 × 10 15 cm -3 to 2 × 10 16 cm -3 . In the semiconductor device according to the present invention, an impurity concentration in the P + buried regions 9a to 9c of high concentration is set to between 1 × 10 16 cm -3 to 7 × 10 16 cm -3 . An impurity concentration in the P + buried region 8 of high concentration is set to between 8 × 10 16 cm -3 to 1 × 10 18 cm -3 . When the region 8 is formed, it is preferably apart from the region 13c by at least 2 µm. Further, the anneal following the formation of the epitaxial layer in which an LSI is formed is performed at 1050°C or less. This feature prevents the impurity from being diffused from the P + high concentration buried regions 9a and 8 to the layer above those regions.

Claims: A semiconductor device comprising: a semiconductor substrate (10) of a P-type conductivity; an epitaxial layer (14) of an N-type conductivity formed on said semiconductor substrate; a first and a second well region (15a, 15b) of the N-type conductivity having an impurity concentration higher than that of said epitaxial layer (14); a first and a second buried impurity region (13a, 13c) of the N-type conductivity which have an impurity concentration higher than that of said first well region, said first buried impurity region (13a) is formed between said semiconductor substrate and said first well region (15a), and said second buried impurity region (13c) is formed between said semiconductor substrate and said second well region (15b); a bipolar transistor (27, 34, 41) formed in said epitaxial layer (14); a third buried region (13b) of the N-type conductivity which is formed between said semiconductor substrate and said epitaxial layer and has an impurity concentration higher than that of said epitaxial layer; a first MOS transistor (24, 25, 26) having a channel of the P-type conductivity formed in said first well region; a fourth and a fifth well region (16b, 16a) of the P-type conductivity formed in said epitaxial layer; a second MOS transistor (24, 28, 29, 31, 32) having a channel of the N-type conductivity formed in said fourth well region (16b); a fourth and a fifth buried impurity region (9c, 9a) of the P-type conductivity which are formed between said semiconductor substrate and said fourth and fifth well regions, respectively, said fifth buried impurity region (9a) extending from said first buried region (13a) to said third buried region (13b) for preventing punch-through; and a sixth impurity region (8) of the P-type conductivity for preventing soft error which is formed below said second MOS transistor in a portion of said fourth buried impurity region and between said semiconductor substrate and said fourth well region (16b) and determined within a range of 8x10 16 cm -3 to 1x10 18 cm -3 ; wherein said bipolar transistor (27, 34, 41) includes: a collector region formed by said third buried region (13b); a base region (34) of the P-type conductivity which is formed in a surface region of said epitaxial layer and has a bottom surface not extending to said buried collector region; and an emitter region (41) of the N-type conductivity formed in said base region; wherein the N-type impurity concentration of said epitaxial layer (14) being determined within the range of 5x10 15 cm -3 to 2x10 16 cm -3 , and the impurity profile of said epitaxial layer (14) being constant; and wherein said fourth and fifth buried impurity regions (9c, 9a) of the P-type conductivity have a P-type impurity concentration determined within a range of 1x10 16 cm -3 to 7x10 16 cm -3 , said fourth buried impurity region (9c) between said semiconductor substrate and said fourth well region separating said sixth impurity region (8) from the neighbouring second buried region (13c). A semiconductor device according to claim 1, wherein said semiconductor device includes a high resistance element (42) formed of polycrystalline silicon and connected to a drain region (29) of said second MOS transistor, and said second MOS transistor and said high resistance element are included in a static memory cell. A semiconductor device according to Claim 1, wherein said semiconductor device includes a memory cell portion and a peripheral circuit portion, and said second MOS transistor is formed on said peripheral circuit portion. A method of manufacturing a semiconductor device as defined in claim 1 comprising the steps of: introducing an impurity of an N-type conductivity into a surface region of a semiconductor substrate (10) of a P-type conductivity by use of a first mask (11), thereby forming a first buried region (13a) of the N-type conductivity and a third buried region (13b) of the N-type conductivity in a peripheral cirucit portion, said first buried region and said third buried region being separated from each other, and a second buried region (13c) of the N-type conductivity in a memory portion; introducing an impurity of the P-type conductivity into the surface region of said semiconductor substrate without using the mask, thereby forming a fifth buried region (9a) of the P-type conductivity in a region between said first and third buried regions (13a, 13b) , and a fourth region (9c) of the P-type conductivity in the memory portion and having an impurity concentration within the range of 1x10 16 cm -3 to 7x10 16 cm -3 ; introducing an impurity of the P-type conductivity into said fourth buried region (9c), thereby forming in the fourth buried region a sixth buried region (8) of the P-type conductivity which has an impurity concentration higher than an impurity concentration of said fourth buried region and is determined within the range of 8x10 16 cm -3 and 1x10 18 cm -3 ; forming an epitaxial layer (14) of the N-type conductivity on said first, second, fourth, fifth and sixth buried regions, said epitaxial layer having an N-type impurity concentration which is determined within a range of 5x10 15 cm -3 and 2x10 16 cm -3 , and an impurity profile which is constant; introducing an impurity of the N-type conductivity in said epitaxial layer, thereby forming a first well region (15a) of the N-type conductivity on said first buried region; introducing an impurity of the P-type conductivity in said epitaxial layer, thereby forming a fifth well region (16a) of the P-type conductivity on said fifth buried region (9a), and a fourth well region (16b) of the P-type conductivity on said fourth and sixth buried regions; and forming an MOS transistor (24, 25, 26) of the P-type conductivity in said first well region, a MOS transistor (24, 28, 29, 30, 31) of the N-type conductivity in said fourth well region (16b), and forming a bipolar transistor (27, 34, 41) in said epitaxial layer formed on said third buried region.

Inventors: MAEDA TAKEO, MAEDA, TAKEO, MAEDA, TAKEO INTELLECTUAL PROPERTY DIVISION
Applicants: TOSHIBA KK, KABUSHIKI KAISHA TOSHIBA
Application year: 1989
Main classification: H01L27
IPC codes: H01L27, H01L21