Control circuit for the clamping voltage of an inductive load drive by a power device in a high side driver configuration

Abstract: The power device (2) has a power supply terminal (3), a load terminal (5) connected to earth by means of an inductive load (1) and a control terminal (6) connected to a circuit (7) with inlet (8) for an alternating control signal. Whenever the power device (2) is turned off, a switching element (10, 30) hitches the voltage of the control terminal (6) to that of the load terminal (5), which is forced to fall by the inductive load. There is provided a discharge circuit (2, 18, 19; 21, 22) of the inductive load (1), which includes means (18, 21) having a predetermined threshold which are fired when the voltage of the load terminal (5) falls down to said predetermined threshold.

Description: The present invention relates to a control circuit for the clamping voltage of an inductive load driven by a power device in a high side driver configuration. The latter expression means the arrangement of the power device between the power supply and the inductive load, in turn connected to ground. This is a very typical arrangement in the industrial field, for example for purposes of driving motors and of controlling deflector circuits for television sets. Such a configuration provides that the drive of the power device, be it an MOS transistor or a bipolar transistor or a Darlington circuit or whatever, be carried out by means of an alternating control signal, which operates in combination with a shut-down signal earthing the control terminal of the power device. The low levels of the control signal determine the shut-down of the power device, whose load terminal connected to the inductive load is thus made to fall from the latter until a voltage, called clamping voltage, is reached which determines the activation of a discharge circuit of the inductive load, either by turning the power device on again or by means of a separate recycling diode. This known system has the drawback that its clamping, and thus its discharge, voltage is relatively low in absolute terms, on which a proportionally high discharge time depends. US-A-4808839 discloses a control circuit for the clamping voltage of an inductive load driven by a power device, which is substantially according to the preamble of claim 1. The object of the present invention is to increase the clamping voltage in absolute value and thus to reduce the discharge time of the inductive load. A further object of the present invention is to make the above clamping voltage adjustable. According to the invention such objects are attained with a control circuit which further includes the features defined in the characterizing clause of claim 1. Said in other words, the control circuit according to the invention is based on the fact that, during the power device's shut-down, it hitches the voltage of the control electrode to that of the load electrode, which is in turn forced to fall below earth by the inductive load connected to ground. In this way the power device does not turn on again and the voltage of the load electrode can continue to fall below ground until it reaches the firing threshold of the threshold means inserted in the discharge circuit. Such threshold represents the clamping voltage of the inductive load and can suitably be made very high in absolute value and adjustable. Some examples of an embodiment of the present invention are illustrated for greater clarity in the enclosed drawings, wherein: Fig. 1 shows a first embodiment of the control circuit according to the invention; Fig. 2 shows a second embodiment of the control circuit according to the invention; Fig. 3 shows a third embodiment of the control circuit according to the invention. Fig. 1 shows an inductive load 1, schematically represented by an inductance, which is driven by a power device 2 constituted by way of an example by an MOS power transistor having a power supply terminal or drain 3 connected to a positive power supply 4, a load terminal or source 5 connected to ground by means of the inductance 1 and a control terminal or gate 6 connected by means of a control amplifier 7 to an inlet 8 for an alternating control signal. The configuration described, with the power device 2 on the high or power supply side with respect to the inductive load 1, is commonly called a high side driver. Between the control terminal 6 of the power device 2 and the control amplifier 7 there is connected a control circuit 9 according to the present invention, which can be completely integrated in a monolithic structure indicated by a dotted line in Fig. 1. The above control circuit 9 comprises a switching element 10, constituted by an NPN transistor, connected between the gate 6 and the source 5 of the MOS power transistor 2. The base of the transistor 10 is connected to the emitter of the same transistor by means of a resistance 11 and it is also connected to the power supply 4 by means of a resistance 12 and a first switch 13 operated (by suitable and in themselves known means) in push-pull with a second switch 14 connected between the amplifier 7 and the gate 6 of the power MOS 2 at the same frequency of the control signal applied to the input 8, so that the switch 13 is open and the switch 14 is closed when the control signal is at a high level, and vice versa when said signal is at a low level. In parallel with the resistance 11 there is an NPN transistor 15, whose base is connected to the collector of a PNP transistor 16, which has the emitter connected to earth and the base connected to a junction point 17 between a Zener diode 18 and a diode 19 connected in series between the gate 6 of the MOS transistor 2 and ground. In operation, when the control signal at the input 8 is at a high level, the switch 14 is closed, the switch 13 is open and the MOS power transistor 2 is on, that is, it conducts current to charge the inductance 1. When the control signal goes to a low level, and at the same time the switch 14 opens and the switch 13 closes, the passage of a current will occur in the circuit branch including the resistances 12 and 11, bringing the transistor 10 to conduction, discharging the gate-source capacity of the power MOS 2, causing its shut-down. At this instant the source voltage is negative, so forced by the inductance 1, which determines its progressive fall below ground, followed by the gate voltage. This situation will persist until the negative value of the source voltage does not attain a preset value equal to the firing threshold of the Zener diode 18 plus the base-emitter voltage of transistor 16. At this point transistor 16 goes into conduction and carries transistor 15 with it, which determines the shut-down of transistor 10. While the gate 6 is clamped at the voltage previously imposed upon it by the firing threshold, source 5 continues to fall until it reaches a threshold value, constituting the clamping or discharge voltage, such as to cause the turning on again of the power MOS 2. Inductance 1 is then discharged through the power MOS 2. By suitably selecting the firing voltage of the Zener diode 18, on which the turn-on voltage of the power device depends, it is possible to arrange that the voltage at which the discharge of the inductance 1 occurs is very high at its ends, that is higher in absolute value than that according to the known art (-15 to -30V against -3 to -4V with respect to ground), so that the discharge time is very brief. Such discharge voltage may be varied easily by changing the Zener diode 18, taking the only precaution of remaining below the breakdown voltage of the power device. In such a way it is also possible to adjust the discharge time. Fig. 2 shows a variant of the control circuit of Fig. 1, whereby it is possible to avoid the discharge of the inductance through the power device 2. Such discharge does in fact imply a considerable dissipation inside the power device itself, which is subjected to a voltage equal to the power supply voltage added to that to which the source 5 is taken with respect to ground and at the same time it is passed through by a high current due to the discharge of the inductance 1. According to Fig. 2 the discharge of the inductance 1 through the power device 2 is avoided by adding to the control circuit 9 a part 20, external or which can in turn be integrated, constituted by the series of a Zener diode 21 and a diode 22, connected in parallel with the inductance 1. For the discharge of the inductance to occur through the diodes 21 and 22 the condition must be satisfied that the sum of the direct voltage of the diode 19, the threshold voltage of the Zener diode 18 and the threshold voltage of the MOS power transistor 2 be higher than the sum of the voltages of the diode 22 and of the Zener diode 21. If this condition is satisfied, the diodes 21 and 22 are turned on earlier than the MOS power transistor 2 and the inductance 1 is thus discharged through diodes 21 and 22 rather than through the power device. In the case of Fig. 2 the presence of components 15, 16, 18 and 19 is not strictly necessary as long as the condition is satisfied that the sum of the power supply voltage at terminal 4, of the voltage of Zener diode 21 and of the direct voltage of diode 22 is lower than the breakdown voltage of the power device, so as to avoid the latter's breakdown. In such a case, the above components 15, 16, 18 and 19 take on a safety function for the power device and will trip should diodes 21 and 22 not be turned on. The reignition of the MOS transistor 2 follows the discharge on the diodes 21 and 22 but is controlled by the switch 13. In FIg. 3 there is illustrated a further variant of the circuit of Fig. 1, wherein the bipolar transistors 10 and 15 have been replaced with MOS transistors 30 and 35 and the resistance 11 has been suitably replaced with a Zener diode 31 protecting the MOS 30 gate. Other variants may be thought up by a technician without going outside the scope of the invention as defined by the claims which follow. In particular, it should be noted that, even if in the embodiments illustrated by way of an example in the drawings the power device has been seen in the form of MOS transistors, the invention is still usable without any conceptual modifications even with other power devices such as bipolar transistors, HIMOS's, Darlington circuits.

Claims: Control circuit for the clamping voltage of an inductive load (1) driven by a power device (2) having a power supply terminal (3), a load terminal (5) connected to ground through the inductive load (1) and a control terminal (6) operationally connected to an alternating control signal input (8), there being provided a discharge circuit for the inductive load which is activated when said clamping voltage is attained, and a switching element (10, 30) connected between said control terminal (6) and said load terminal (5) and controlled by the input signal so as to accomplish a direct connection between said control terminal (6) and said load terminal (5) whenever the power device (2) is shut down, said discharge circuit including means (18) having a predetermined firing threshold which are activated when the voltage at the load terminal (5) of the power device (2) falls below ground until it reaches said firing threshold, characterized in that said switching element (10, 30) has a control element (base, gate) connected to a voltage supply (4) by first switching means (13) operating in push-pull with second switching means (14) connected between said control terminal (6) and said control signal input (8) and at the latter′s same frequency and said threshold means (18) comprises a first Zener diode (18) connected between said control terminal (6) of the power device (2) and ground by a first diode (19), there being provided means (16, 15, 35) sensitive to the firing of said first Zener diode (18) to control the deactivation of said switching element (10, 30) for the subsequent turning on of said power device (2). Control circuit according to claim 1, characterized in that said threshold means further comprises a second Zener diode (21) in series with a second diode (22), in parallel with the inductive load. Control circuit according to claim 1, characterized in that said switching element is constituted by a bipolar transistor (10). Control circuit according to claim 1, characterized in that said switching element is constituted by an MOS transistor (30).

Inventors: PALARA SERGIO, ZISA MICHELE, PALARA, SERGIO, ZISA, MICHELE
Applicants: SGS THOMSON MICROELECTRONICS, SGS-THOMSON MICROELECTRONICS S.R.L.
Application year: 1989
Main classification: H03K17
IPC codes: H02H9, H03K17