Probe unit, driving method thereof, and scanning device for detecting tunnel current having said probe unit

Abstract: A probe unit (Fig.1) is provided that is suitable for example for use in a scanning tunnel microscope or the like. The electrical probe contact (7) of this unit is centrally located and mounted upon a flexible member (4,5,6). The flexible member (4,5,6) is symmetrically supported (3) at its periphery and is constrained thus so that the electrical probe contact (7) can only move back and forth in a single direction. Flexure of the flexible member (4,5,6) may be driven by electrostatic or piezoelectric forces. Alternatively, the flexible member may include a layer of piezoelectric material, the elongation or contraction of which will cause flexure.

Description: BACKGROUND OF THE INVENTION Field of the Invention The present invention relates to a probe unit for a scanning type of tunnel current detecting device for, for example, a scanning tunnel microscope and a high-density recording-reproducing apparatus utilizing the principle of the microscope. The present invention relates also to a method for driving a probe suitable for the probe unit. The present invention further relates to a scanning-type tunnel current detecting device provided with the probe unit. Related Background Art A scanning tunnel microscope (hereinafter referred to as STM) has already been known which utilizes the tunnel effect that electric current flows through a barrier between the surface of a specimen and a sharp elctroconductive probe brought as close as several nm or less to the surface. [See G. Binnig et al., Helvetica Physica Acta, 55 , 726 (1982); USP 4,343,993, etc.] The tunnel current which flows on application of a voltage between a probe and the surface of a specimen brought to close proximity of several nm or less will change exponentially as a function of the distance therebetween. Accordingly, the surface of the specimen can be observed in high resolution in an atomic level by scanning the surface of the specimen in X-Y directions in matrix with the probe with the tunnel current kept constant. A high-density recording-reproducing apparatus which is based on the principle of the STM is described in Japanese Patent Application Laid-open Nos. 63-161552 and 63-161553. In such an apparatus, recording is conducted, with a probe similar to that of STM, by changing the voltage applied between the probe and a recording medium which exhibits memory effect in its switching characteristics. The material for the recording medium is exemplified by a thin layer of a chalcogen compound or of an organic compound having a π-electron system. The reproduction is conducted according to the difference in tunnel resistance between the recorded portion and the non-recorded portion of the thin layer. In this type of recording, recording-reproducing is practicable by use of a recording medium the surface shape of which can be changed by application of a voltage to the probe. Japanese Patent Application Laid-open No. 61-206148 (1986) describes a probe formed by utilizing a processing technique [K.E.Peterson "Silicon as a Mechanical Material", Proceedings of the IEEE, 70 (5), 420-457 (1982)] for providing a minute structure on a substrate, and also describes an STM based on such a technique. This probe unit is constructed of a silicon single crystal as a substrate, a parallel spring made by fine fabrication and being finely movable in X-Y directions, and a tongue-shaped member having a probe provided on the movable portion so that the probe may be displaced in direction perpendicular to the substrate face (in the Z direction) by electrostatic force caused by an applied electric field between the tongue-shaped part and the bottom face portion. Japanese Patent Application Laid-open No. 62-281138 describes a memory device provided with a converter array in which tongue-shaped parts as disclosed in Japanese Patent Application Laid-open No. 61-206148 are arranged in a multiple manner. In conventional probe units of a cantilever structure, there are posed, for example, the following disadvantages (1) to (4). (1) The probe, since it is provided on the tip end of the cantilever, tends to positionally deviate slightly by thermal expansion or constriction of the cantilever in the length direction, or by deformation caused by difference in thermal expansion coefficient between the cantilever material and the electrode material. (2) A cantilever constituting a probe is difficult to be formed precisely because of liability of causing warpage or torsion by the internal stress in preparation thereof. The cantilever is also liable to be deformed by internal stress relaxation with a lapse of time. Accordingly, a cantilever is unsatisfactory for a probe-driving mechanism which is required to have position-controllability with precision of an atomic level. A multiple arrangement of cantilevers, for example, as shown in the above-mentioned Japanese Patent Application Laid-open No. 62-281138, is required to maintain the mutual positional relation in high precision. The cantilever, however, could not satisfy such requirement. (3) In the aforementioned prior art, the substrate is prepared by finely processing a silicon single crystal, and the material for the substrate is limited to silicon, which needs many steps of production processes, resulting in a disadvantageous high cost. (4) Further in the prior art, the driving mechanism has a plurality of probes on parallel hinges. Therefore, on driving each of the probes in a z direction, each probe may be deviated by electrostatic force, causing mutual interference of the probes, if the parallel hinges are not sufficiently rigid. SUMMARY OF THE INVENTION An object of the present invention is to provide a probe unit which overcomes the above-mentioned disadvantages of the prior art, and which is affected little by a temperature change in the operation, and allows a precise positional control at an atomic level when the probes are arranged in a multiple manner. Another object of the present invention is to provide a probe unit which can be prepared with a high precision without occurrence of warpage and torsion in the production. A further object of the present invention is to provide a method for driving the probe. A still further object of the present invention is to provide a scanning type of tunnel current detecting device which is designed compactly, operable by a low voltage, affected little by external vibration, and capable of stable scanning. Any one or more of these objects are achieved by the various features of the present invention described below. According to the present invention there is provided a probe unit comprising a substrate, a bridge-shaped flexible member formed on the substrate, and a probe provided in contact with the flexible member, said probe unit further comprising a driving means for displacing the probe in a direction perpendicular to a face of the substrate. According to another aspect of the present invention, there is provided a probe unit comprising a substrate, a first electrode formed on the substrate, a bridge-shaped flexible member formed on the substrate and insulated by a cavity from the first electrode, and a probe provided in contact with the flexible member, the flexible member being constituted of a laminate comprising a second electrode layer, an insulating layer, and a third electrode layer for applying a voltage to the probe. According to still another aspect of the present invention, there is provided a probe unit comprising a substrate, a first electrode formed on the substrate, a piezoelectric layer formed on the first electrode, a bridge-shaped flexible part formed on the substrate, and a probe provided in contact with the flexible member, the flexible member being constituted of a laminate comprising a second electrode layer, an insulating layer, and a third electrode layer for applying a voltage to the probe, and the first electrode and the second electrode layer being in opposition to each other with interposition of the piezoelectric layer. According to a further object of the present invention, there is provided a probe unit comprising a substrate, a bridge-shaped of flexible member formed on the substrate, and a probe provided in contact with the flexible member, the flexible member being constituted of a laminate comprising a beam structure layer, a first electrode, a piezoelectric layer, a second electrode layer, an insulating layer, and a third electrode layer for applying a voltage to the probe. According to a still further aspect of the present invention, there is provided a method for driving a probe unit comprising a substrate, a first electrode formed on the substrate, a bridge-shaped flexible member formed on the substrate and insulated by a cavity from the first electrode, and a probe provided in contact with the flexible member, the flexible part being constituted of a laminate comprising a second electrode layer, an insulating layer, and a third electrode layer for applying a voltage to the probe; the method comprising displacing the probe in a direction perpendicular to the substrate face by an electrostatic force caused by application of voltage between the first electrode and the second electrode layer. According to a still further aspect of the present invention, there is provided a method for driving a probe unit comprising a substrate, a first electrode formed on the substrate, a piezoelectric layer formed on the first electrode, a bridge-shaped flexible member formed on the substrate, and a probe provided in contact with the flexible member, the flexible member being constituted of a laminate comprising a second electrode layer, an insulating layer, and a third electrode layer for applying a voltage to the probe, and the first electrode and the second electrode being in opposition to each other with interposition of the piezoelectric layer; the method comprising displacing the probe in a direction perpendicular to the substrate face by piezoelectric effect caused by application of voltage between the first electrode and the second electrode layer. According to a still further aspect of the present invention, there is provided a method for driving a probe unit comprising a substrate, a bridge-shaped flexible member formed on the substrate, and a probe provided in contact with the flexible member, said flexible member being constituted of a laminate comprising a beam structure layer, a first electrode layer, a piezoelectric layer, a second electrode layer, an insulating layer, and a third electrode layer for applying a voltage to the probe; the method comprising displacing the probe in a direction perpendicular to the substrate face by piezoelectric effect caused by application of voltage between the first electrode layer and the second electrode layer. According to a still further aspect of the present invention, there is provided a scanning type of tunnel current detecting device having a probe unit comprising a substrate, a bridge-shaped flexible member provided on the substrate, a probe provided on the flexible member, and a driving means for displacing the probe relative to the substrate; an adjusting means for adjusting the distance between the probe and a specimen to be observed; and a voltage applying means for applying an voltage between the probe and the specimen. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 illustrates a cross-section of the first embodiment of the probe unit of the present invention. Fig. 2 illustrates a plan view of the first embodiment of the probe unit of the present invention. Fig. 3A through Fig. 3D illustrate the steps of forming the probe unit of Fig. 1 and Fig. 2. Fig. 4 illustrate the cross-section of the second embodiment of the probe unit of the present invention. Fig. 5 illustrates a plan view of the second embodiment of the probe unit of the present invention. Fig. 6A through Fig. 6E illustrate the steps of forming the probe unit of Fig. 4 and Fig. 5. Fig. 7A and Fig. 7B illustrate respectively the cross-sectional view and the plan view of the third embodiment of the probe unit of the present invention. Fig. 8 shows a schematic view of arrangement of a plurality of the probe units. Fig. 9A through Fig. 9C illustrate principal steps of forming the probe unit of Fig. 7. Fig. 10, Fig. 11, and Fig. 12 illustrate constitution of the probe units employed to tunnel current detecting devices. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The bridge-shaped flexible member in the present invention has a structure of an elongate beam of which both ends of the flexible member are fixed on a substrate. The flexible member is specifically constituted of a laminate comprising at least an electrode layer, an insulating layer, another electrode layer for applying a voltage to the probe, the laminate being connected to the substrate by at least two supports. The shape of the flexible member is not limited. Scanning of the probe can be made under less influence from external vibration by raising the natural vibration frequency of the flexible member because the probe is formed on the flexible member provided on the substrate. The probe unit having the structure of the present invention will not cause warpage nor torsion of the flexible member in the production of the probe unit because the probe unit is produced by laminating an electrode layer, an insulating layer, and another electrode layer for application of voltage to the probe and then processing and etching by photolithography technique. The driving means suitable for the probe unit of the present invention include those employing electrostatic force, and those employing piezoelectric effect, among which those employing a piezoelectric effect are more preferable for a larger stroke of the probe. The probe units and the methods of driving the units are described in detail by referring to the following Embodiments 1 to 4. Embodiment 1 An embodiment of the present invention is explained by referring to the figures. Fig. 1 and Fig. 2 are a cross-sectional view and a plan view for explaining a probe unit of the present invention. On a substrate 1, a lower electrode 2 is provided. A support 3 is etched on and around the lower electrode 2 to form a cavity 8, thus an upper electrode 4, an insulating film 5, and a probe electrode 6 are formed in the shape of a bridge. Further on the probe electrode, a probe 7 is provided which serves to detect electric current generated by a tunnel effect. The probe is placed so as to keep equal the distances from the support 3 of the bridge. The force driving the probe 7 in a direction perpendicular to the substrate face is an electrostatic force, which causes displacement of the probe by application of a voltage to the lower electrode 2 and the upper electrode 4. The probe displacement mechanism is constituted of a both-end-supported beam, allowing displacement strictly perpendicular to the substrate face. The insulating film 5 serves to insulate the probe 7 detecting tunnel current generated, and the probe electrode 6 (electrically connected to the probe 7) from the upper electrode 4. For example, in the case where the bridge has a length of 200 µm, a breadth of 20 µm, and a thickness of approximately 1 µm, and the distance between the electrodes is 3 µm, the application of 50 V between the lower and the upper electrodes causes a displacement of approximately 1 µm in the direction perpenducular to the substrate face (in an Z axis direction). Additionally, this structure gives a resonance frequency of as high as 200 KHz of the flexible member, enabling scanning with less influence of external vibration. The probe unit of this structure is driven specifically as described below. Several ten volts of an offset voltage is initially applied between the electrodes. The reduction of the voltage restores the probe on the bridge-shaped, both-end supported beam to pull out the probe in a Z direction owing to its elasticity, while the increase of the voltage strengthen further the attracting force to pull in the probe in the Z axis direction, whereby the driving is feasible in the Z direction. The steps of forming the probe unit of Fig. 1 and Fig. 2 is described by referring to Fig. 3. Step A A glass plate made of glass 7059 supplied by Corning Co. having a thickness of 1.1 mm was employed as the substrate 1. Thereon chromium was deposited in a thickness of 0.1 µm by vacuum vapor deposition, and processed by photolithography to form the lower electrode 2. Step B Subsequently, copper as the supporter 3, titanium as the upper electrode 4, a silicon oxide film as the insulating film 10, titanium as the probe electrode 11, and tungsten as the probe material 9 were deposited thereon by a successive sputtering method in thicknesses of 3.0 µm of copper, 0.2 µm of titanium, 0.6 µm of silicon oxide, 0.2 µm of titanium, and 3.0 µm of tungsten. Step C The successively formed five-layered film prepared in the Step B was processed consecutively by etching with a hydrofluoric acid type etching solution to give a pattern of the upper electrode 4 in Fig. 2. Then according to photolithography, the portion except above the lower electrode 2 was covered with a photoresist, and copper of the support 3 was over-etched with a hydrochloric acid type etching solution to form the cavity 8. In this Embodiment, the etching pattern or the over-etching state should be controlled in such a manner that the support which is made of copper is insulated from the lower electrode 2. In the case where the support is of insulative material, such control is not needed. Thereafter the probe electrode 11 was processed to give a pattern 6 in Fig. 2 by photolithography. Then the insulating film 10 was fabricated to give a pattern denoted by the numeral 5 in Fig. 2 by photolithography. Further the probe material 9 was over-etched with a sodium hydroxide-red prussiate type etching solution to form a probe 7 of tungsten. Thus the probe unit was prepared. Since the probe unit described above is formed by employing a photolithography technique and a vacuum film-formation technique, the substrate employed may be of a low-priced material, and the unit can be mass-produced. The means for applying a voltage between the upper electrode and the lower electrode provides a mechanism for displacement in the Z direction for each probe, thus enabling individual adjustment of the surface unevenness and the surface height deviation arising in the probe formation. This probe unit is advantageous also in that the probe is capable of moving in the completely perpendicular direction, and exhibits extremely high resonance frequency. Embodiment 2 A second embodiment is described below. Fig. 4 and Fig. 5 are a cross-sectional view and a plan view respectively for explaining a probe unit of the present invention. On a substrate 1, a support 43 is provided. The support 43 has a cavity 49. A lower electrode 42 and a piezoelectric layer 44 are provided in the cavity and brought into contact with the substrate 1. Further, on the support 43 and the piezoelectric layer 44, an upper electrode 45, an insulating film 46, and a probe electrode 47 are formed in the shape of a bridge. On the probe electrode, a probe 7 is provided which serves to detect electric current generated by tunnel effect. The probe is placed so as to keep the distances equal from the support of the bridge. The probe 7 is driven in a direction perpendicular to the substrate face by applying a voltage between the upper electrode 45 and the lower electrode 42 to deform the piezoelectric layer 44. The change of the polarity of the upper electrode and the lower electrode enables an up and down displacement of the probe in the Z direction. Additionally, the probe displacement mechanism is constituted of a both-end-supported beam, allowing displacement strictly perpendicular to the substrate face. The insulating film 46 is provided to serve to insulate, from the upper electrode 45, the probe 7 and the probe electrode 47 electrically connected with the probe 7. For example, in the case where the bridge has a length of 200 µm, a breadth of 20 µm, and a thickness of approximately 1 µm, and the piezoelectric layer has a height of 3 µm, the application of 30 V between the lower and the upper electrodes causes a displacement of approximately 1 µm in the Z direction. The steps of forming the probe unit of Fig. 4 and Fig. 5 is described by referring to Fig. 6A through Fig. 6E. Fig. 6A through Fig. 6E illustrate production steps by a cross-sectional view at the line a-a in Fig. 5. step A A glass plate made from glass 7059 supplied by Corning Co. having a thickness of 1.1 mm was employed as the substrate 1. Thereon chromium was deposited in a thickness of 0.1 µm by vacuum vapor deposition, and processed by photolithography to form the lower electrode 42. Step B Subsequently, as the support 43, 44, a piezoelectric material, aluminum nitride (AlN) was formed in a film thickness of 3 µm by RF magnetron sputtering by using AlN as the target under the conditions of a back pressure of 10⁻⁷ torr, an argon pressure of 5 x 10⁻³ torr (N₂: 50 %), the RF power of 5 W/cm² and the substrate temperature of 350 o C. Thereafter, on the support 43, 44, titanium as the upper electrode 45, a silicon oxide film as the insulating film 46, titanium as the probe electrode 47, and tungsten as the probe material 48 were deposited by a successive sputtering method in thicknesses of 0.2 µm of titanium, 0.6 µm of silicon oxide, 0.2 µm of titanium, and 3.0 µm of tungsten. Steps C and D The successively formed five-layered film prepared in the Step B was processed consecutively by etching with a hydrofluoric acid type etching solution to give a pattern of the upper electrode 45 in Fig. 5. Then according to photolithography, the probe electrode 47 and the insulating film 46 were processed into a pattern of Fig. 5. The probe material 48 was also processed into a pattern of the probe electrode 47 as shown in Fig. 5. Thereafter in order to provide the cavity 49, a photoresist layer 61 was formed except above the portions corresponding to the cavity 49 which are at the both sides of the piezoelectric layer 44 to be kept remaining. (Fig. 6C is a cross-sectional view at the line c-c in Fig. 6D) Step E Subsequently, the support and piezoelectric material 43, 44 was over-etched with an aqueous acetic acid-nitric acid solution to form the cavity 49 by photolithography. In this Example, the etching of the pattern or the state of the over-etching should be controlled in such a manner that the support 43, 44 which is a piezoelectric material of AlN is insulated from the lower electrode 42 and that the cavity in a desired shape is obtained. Finally, the probe material 48 was over-etched with a sodium hydroxide-red prussiate type etching solution to form a tungsten probe 7. Thus the probe unit was obtained. Embodiment 3 A third Embodiment of the present invention is described below by referring to Fig. 7A and Fig. 7B. In Fig. 7A and Fig. 7B, the numeral 1 denotes a substrate; 3, a support; 8, a cavity; and the portion on the support constitutes a bridge-shaped both-end-supported beam 70. The both-end-supported beam 70 is constituted, from the bottom, of a beam structure layer 71, a lower electrode layer 72, a piezoelectric material layer 73, an upper electrode layer 74, an insulating layer 5, an electrode layer 6 for applying a voltage to the probe, and an electroconductive probe 7 through which the tunnel effect current flows. The probe 7 is placed at the central position of the both-end-supported beam 70. The driving of probe 7 in the direction perpendicular to the substrate surface (the Z direction) is conducted by utilizing expansion-constriction of the piezoelectric material 73. That is, the application of a voltage to the piezoelectric material 73 having been treated for polarization from the lower electrode 72 and the upper electrode 74 expands the both-end-supported beam lengthwise to cause deflection of the both-end-supported beam by the difference of the expansion from that of the beam structure layer, thus driving the probe 7. The steps of forming the probe unit illustrated in Fig. 7A and Fig. 7B is described by referring to Figs. 9A, 9B, and 9C. Step A A glass plate of 1 mm thick was employed as the substrate 1. Thereon copper as the support 3, a silicon oxide film as the beam structure layer 71, and titanium as the lower electrode 72 were deposited by a successive sputtering method in thicknesses respectively of 3.0 µm of copper, 3 µm of a silicon oxide film, and 0.2 µm of titanium. Thereon 3 µm of aluminum nitride was deposited as the piezoelectric material 73 by RF magnetron sputtering. Further thereon titanium as the upper electrode 74, a silicon oxide film as the insulating film 5, titanium as the electrode 6 for applying a voltage to the probe, tungsten as the probe material 75 were deposited by succsessive sputtering in thicknesses respectively of 0.2 µm of titanium, 0.6 µm of the silicon oxide film, 0.2 µm of titanium, and 3.0 µm of tungsten. Step B The four layers from the probe material 75 to the upper electrode 74 out of the successively formed film of the Step A described above was processed by photolithography into a pattern shape of the beam structure layer 71 in Fig. 7A by etching the four layers successively with a hydrofluoric acid type etching solution. Subsequently, the piezoelectric material (aluminium nitride) 73 was similarly processed with glacial acetic acid-nitric acid etching solution. Further the three layers of from the lower electrode 72 to the support 3 were successively processed with a hydrofluoric acid type etching solution. Then, according to photolithography, the portion except above the cavity 8 in Fig. 9A was covered with a photoresist, and over-etched the copper of the support 3 with a hydrochloric acid type etching solution to form the cavity 8. Step C Subsequently, according to photolithography, the seven layers of from the electrode layer 6 for probe voltage application to the support 3 were processed sequentially to give the patterns shown in Fig. 7A. Then the probe material 75 was over-etched with a sodium hydroxide-red prussiate type etching solution to form the tungsten probe 7. Embodiment 4 A tunnel current detecting apparatus is explained in which a probe unit of Embodiments 1 to 3 is incorporated. Fig. 10 shows a cross-section of the apparatus. The numeral 101 denotes a probe unit provided with a plurality of the probes of the present invention. The probe unit is fixed to a Z-axis coarse-adjusting piezoelectric element 103 for coarse adjustment in the Z direction to bring the probe unit 101 close to the opposing surface of the specimen 102 so that a tunnel current is detectable. The inclination of the fixing member 104 which fixes the Z-axis coarse-adjusting piezoelectric element 103 is adjustable by three inclination-adjusting screws 106, thereby the degree of parallelization between the probe unit 101 and the surface of the specimen 102 being correctable. The numeral 105 denotes a parallel hinge spring stage which has double parallel springs combined in rectangular cross as shown in the plan view of Fig. 11, thereby the specimen 102 placed on the center being moved freely in X-Y directions. The drive of the specimen is made by piezoelectric elements 107 and 108. Such a constitution allows the probe to scan the surface of the specimen 102 in X-Y directions, thereby keeping constant the distance between the surface and the probe by adjusting each probe independently in correspondence with the fine roughness and inclination of the surface by employing the Z-axis driving mechanism for each probe. In this Embodiment, the specimen is moved in the X-Y directions and the probe is movable only in the Z direction, so that the movement in the X-Y directions does not interfere with the movement in the Z direction, thus stable scanning being practicable. Another constitution is shown in a cross-sectional view in Fig. 12, in which a cylindrical piezoelectric element 109 is employed, in place of the aforementioned parallel hinge spring stage 103, as the stage for fine movement of the specimen 102 in the X-Y direction. The probe unit 101 is fixed to a fixing member 110, and opposing to the face of the specimen 102 fixed to the cylindrical piezoelectric element 109. On the peripheral surface of the cylindrical piezoelectric element 109, the electrode is divided into four parts opposing to the X-Y directions. Application of a reversed polarity voltage to the opposing electrodes makes the cylinder minutely incline to the direction of the opposing electrode, moving the specimen 102 finely in the X or Y direction. Application of the same polarity voltage on the quartered electrodes expands or constricts the cylinder in the Z direction, allowing the coarse and fine adjustment in the Z direction, so that the specimen 101 is brought close to the probe unit 101. Although the adjusting screw for correction of inclination is not shown in the figure, they may be attached in accordance with the necessity. The present invention has the advantages as below. (1) The probe unit of the present invention seldom causes a positional deviation of the probe arising from lengthwise thermal expansion caused by temperature change in operation or from the difference of thermal expansion coefficient between the flexible member and the electrode material, because of the symmetrical structure having the probe in the middle of the bridge-shaped flexible member provided on the substrate and the fixation of the both end of the flexible member. The probe unit can be formed precisely without warpage nor torsion of the beam caused by inner stress in production. (2) The probe unit of the present invention can be produced in extremely low cost because the material of the substrate is not limited to conventional silicon substrate but may be usual 7059 glass or the like. (3) The utilization of piezoelectric effect particularly increases the driving force in the Z direction, and maintain the displacement in the Z direction in the level same as in a cantilever even with the bridge-shaped structure. It also raises the resonance frequency, enabling the probe to respond to a higher scanning without influence of external vibration.

Claims: A probe unit comprising a substrate (1), a bridge-shaped flexible member (4,5,6) formed on the substrate, and a probe (7) provided in contact with the flexible member, said probe unit further comprising a driving means (2,4) for displacing the probe in a direction perpendicular to a face of the substrate. A probe unit as claimed in claim 1, characterised in that said driving means comprises a first electrode (2) formed on the substrate (1) and a second electrode (4), said flexible member being constituted of a laminate comprising said second electrode layer (4), an insulating layer (5), and a third electrode layer (6) for being arranged to apply a voltage to the probe, said flexible member being insulated by a cavity (8) from said first electrode (2). A probe unit as claimed in claim 2, characterised by a piezoelectric layer (44) formed on the first electrode (42), said first electrode and the second electrode being in opposition to each other with interposition of the piezoelectric layer. A probe unit as claimed in claim 2, said flexible member being constituted of a laminate comprising a beam structure layer (71), a first electrode layer (72), a piezoelectric layer (73), a second electrode (74), an insulating layer (5) and a third electrode layer (6) for applying a voltage to the probe (7). A probe unit as claimed in any one of claims 1 to 4, characterised by constraint means (3) arranged in symmetrical relationship with said flexible member so as to constrain flexure thereof and to ensure thus the probe contact is displaceable back and forth in a singular direction only. A method for driving a probe unit as defined in claim 2, comprising displacing the probe (7) in a direction perpendicular to the substrate face by an electrostatic force caused by application of voltage between the first electrode (2) and the second electrode layer (4). A method for driving a probe unit as claimed in claim 3, comprising displacing the probe in a direction perpendicular to the substrate face by piezoelectric effect caused by application of voltage between the first electrode and the second electrode layer. A method for driving a probe unit, as claimed in claim 4, comprising displacing the probe in a direction perpendicular to the substrate face by piezoelectric effect caused by application of voltage between the first electrode layer and the second electrode layer. A scanning type of tunnel current detecting device having a probe unit as claimed in any one of claims 1-5, characterised by an adjusting means for adjusting the distance between the probe and a specimen to be observed; and a voltage applying means for applying a voltage between the probe and the specimen. A device as claimed in claim 9, characterised in that said device has a driving means for moving the specimen relative to the probe.

Inventors: KAWASE TOSHIMITSU, MIYAZAKI TOSHIHIKO, NOSE HIROYASU, TAKAMATSU OSAMU, KAWASE, TOSHIMITSU, MIYAZAKI, TOSHIHIKO, NOSE, HIROYASU, TAKAMATSU, OSAMU
Applicants: CANON KK, CANON KABUSHIKI KAISHA
Application year: 1989
Main classification: G01N27
IPC codes: H01J37, G11B9, G01B21, H02N2, G01N27, G01B7, G01N37, G01Q10, G01Q60