Method of creating a high flux of activated species for reaction with a remotely located substrate

Abstract: A method of forming a high flux of activated species (34), such as ions, of an energy transferring gas (A) by employing a substantial pressure differential between the pressure adjacent the aperture (26) in a first conduit (24) through which the energy transferring gas is introduced into a vacuumized enclosure (12) and the background pressure which exists in said enclosure. In one embodiment, the flow rate of the energy transferring gas flowing through said first conduit, when taken in conjunction with said pressure differential, causes the high flux of activated species of the energy transferring gas to collide with a precursor deposition/etchant gas, remotely introduced into the enclosure through a second conduit (60), for forming deposition/etchant species (65) therefrom. In an alternate embodiment, the pressure differential causes those activated species, themselves, to be either deposited upon or etched away from the surface of a remotely positioned substrate (50).

Description: The present invention concerns a method of fabricating high quality thin films at a relatively high rate of deposition according to the method steps mentioned in the opening part of claim 1. The invention has generally to do with the deposition and removal of thin films of material through the generation of a high flux of activated species of an energy transferring gas adjacent the apertured end of a first conduit through which the gas is introduced into an evacuated enclosure. More particularly the invention has to do with the method of generating a high density of only desired energized species for the deposition of thin films of material onto or the removal of thin films of material from the surface of a remotely located substrate. Whereas it has previously been possible to either deposit relatively poor quality material (such as semiconductor alloy material, dielectric material or diamond-like material) at a relatively high rate of deposition, or to deposit relatively high quality material at a relatively low rate of deposition; the concepts disclosed by the instant invention now make it possible to deposit high quality thin film material at very high rates of disposition. Also due to the extremely high flux of ionic species which are activated (an ion flux of over 25 mA/cm²), it is possible to etch material from the surface of a remotely located substrate with efficiencies heretofore attainable only in bipolar ion etching processes. Note that, as used herein, the term "energy transferring gas" will refer to a gaseous precursor which is adapted to be activated by an external source of energy for generating activated species (ionic, free radical or otherwise excited neutrals) thereof and either (1) transferring the energy thereof through collisions with remotely located deposition/etchant gas; or (2) transferring the energy thereof through a chemical reaction which occurs on the surface of a remotely located substrate. In light of this definition, the invention disclosed herein, in its broadest form, relates to the ability to generate activated species from a relatively high percentage of the energy transferring gas flowing through an activation region and transmitting a high flux of those activated species to a remote location. PRIOR ART PLASMA DEPOSITION TECHNIQUES 1. R.F. Glow Discharge : R.F. glow discharge has consistently demonstrated the ability to provide the highest quality of deposited thin films of semiconductor alloy material. The quality of thin films of deposited semiconductor alloy material typically is measured in terms of the density of localized defect states which exist in the energy gap thereof. However, other parameters may materially affect, in a deleterious fashion, the electronic and optical properties of the depositing semiconductor film. Despite the relatively low defect density present in the energy gap of r.f. glow discharge deposited silicon alloy material, said defect density remains orders of magnitude higher than the defect density of crystal line silicon. This is particularly true in terms of narrow band gap semiconductor alloy materials fabricated from silicon germanium alloys wherein (in the best 1.35-1.65 eV material) the density of localized defect states in the energy gap still remains in the mid-10¹⁶ defects/cm³/eV range. Of course, in order to obtain high quality material exhibiting even this relatively high defect density, it is necessary to introduce different, but complementary compensating elements into the glow discharge plasma. Further, and very importantly, regardless of the power employed, the rate of deposition remains low (less than 1,5 nm/S). It has been demonstrated that the introduction of a first compensating element, such as hydrogen, is effective in reducing the localized states in the energy gap of silicon alloy material at or near the Fermi level, while the introduction of a second compensating element, such as fluorine, further reduces those localized states, as well as other states, between those near the Fermi level and the conduction band. Due to the relatively low energy imparted by any r.f. field, regardless of the power level employed, to the plasma of decomposed precursor gases, the rate of deposition remains relatively low. This relatively slow deposition rate provides the fluorine and hydrogen compensating elements with a sufficient length of time to be able to react with the depositing host matrix and relax dangling, broken, stressed, or strained bonds in the narrow band gap silicon germanium alloy material as that material is depositing on the surface of said substrate. However, and as should be apparent to the reader, in a commercial fabrication process, a significant problem has been found to exist in the deposition of high quality silicon alloy material. When the rate of deposition of the narrow band gap semiconductor alloy material (and indeed the deposition rate of any semiconductor or insulating material) is raised in order to deposit that material in a commercially economical manner, the quality of the deposited material deteriorates. More particularly, previous attempts to increase the rate of deposition of semiconductor alloy material (e.g., from as little as 1 to 1,2 nm/S), as by increasing the r.f. power being utilized, results in a more energetic plasma. This more energetic plasma either changes the plasma reaction kinetics to produce a different set of ions and free radicals, or that energetic plasma fails to allot the compensating elements a sufficient period of time in which to interact with the host matrix of the depositing semiconductor alloy material for relaxing the strained, broken, dangling, stressed or otherwise deviant bonding configurations thereof. Although the foregoing paragraphs have dealt primarily with the deposition of narrow band gap semiconductor alloy material, the same deterioration in material quality (an increase in the density of defect states) with increasing power is universally reported and has been experimentally seen in the plasma deposition of wide band gap semiconductor alloy material. Before continuing, it will be helpful to briefly consider some of the plasma kinetics which occur in r.f. or microwave initiated glow discharges. Experimental observations of the electronic defect density of multi-element amorphous silicon alloy films deposited from a great number of different gas chemistries (using both r.f. and microwave energy) reveal that deposited thin films deposited from combinations of precursor gases having comparable individual "deposition efficiencies" exhibit the highest quality electronic properties. Based upon those observations, it becomes possible to modify the characteristics of the deposited thin film material. However, the degree of modification possible is limited because of the uncontrollable chemistry provided by the "zoo" of chemical reactions generated in the highly energetic plasma. More particularly, in the plasma, the precursor feedstock gases experience multiple collisions with plasma electrons to generate a host of free radicals and ions. It is necessary to pay the most attention to the free radicals which have been generated because experience has demonstrated that free radicals represent the plasma species which is deposited onto a substrate. With respect to those free radicals, note that there exists a distribution of free radicals depending upon the electron temperature, the electron density and the residence time of the gaseous precursor exposed to the electromagnetic field. The residence time dependence results from multiple electron collisions or collisions between previously excited free radicals and feedstock molecules or between two or more free radicals. In a silane feedstock plasma, the lowest energy member of the possible free radicals which can be generated is SiH₃*, with higher energy members including SiH₂*, SiH* and Si*. Since a plasma, in order to be self-sustaining, must contain electrons with sufficient energy to generate ions via collisions with feedstock molecules, and due to the fact that the energy required to generate an ion is generally higher than the energy required to generate the lowest energy member of the free radical spectrum (This assumption will be revisited in the portion of the instant specification which deals with the effect of a magnetic field on the deposition process of this invention.), it is possible to assume that a distribution of free radicals will be created in any plasma (the breadth of the distribution being dependent upon the power absorbed by the plasma). The problem of the deteriorating quality of depositing thin film material relative to an increase in a.c. power can be controlled (to some degree) when dealing with the relatively low power levels generated by r.f. energy. However, the ability to increase rates of deposition from 1 to 1,2 or even 2 nm/S is not commercially meaningful. Therefore, recently, researchers have sought to utilize microwave frequencies (including elaborate electron cyclotron resonance schemes) so as to obtain over one order of magnitude improvement in the rate of deposition of a wide variety of thin film materials. Through the use of more energetic microwave initiated glow discharge deposition techniques, it has become possible to obtain an increased rate of deposition through the more efficient disassociation of the gaseous precursors from which the plasma is formed. The trouble which the aforementioned researchers have encountered is that at the same time that the economics of the microwave initiated deposition process has been greatly enhanced by an increased rate of deposition, the quality of the depositing film has been correspondingly compromised. In other words, for example, the best microwave deposited semiconductor alloy material has a defect density about an order of magnitude higher than the defect density of the best r.f. deposited semiconductor alloy material, i.e., quality is sacrificed for quantity. 2. Microwave Glow Discharge : The reader should note that the assignee of the instant invention has previously described, in US-A-4,504,518, 4,517,223, and 4,701,343, an important low pressure method by which high quality films can be deposited using microwave energy. This low pressure, microwave deposition process remains, up to the date of this invention, the most efficient and cost effective manner of depositing relatively high quality semiconductor, insulating, dielectric, or hard thin films. More particularly, the invention described therein relates to the use of a low pressure regime in which to initiate a glow discharge deposition, whereby the plasma is efficiently maintained, without polymer formation. This is accomplished by operating at a substantial minimum of the "modified Paschen curve" for the given set of gaseous precursors being employed. In a nutshell, this means that for a particular gaseous precursor mixture, there exists an optimum combination of power, pressure and aperture diameter which will sustain a plasma of a given volume. Following the inventive scheme disclosed therein, it becomes possible to both obtain a highly energetic plasma in which all process gases are disassociated and in which the rate of deposition is substantially increased, vis-a-vis, the rate of deposition of r.f. plasmas; both features accomplished while operating at a minimum input of power. Further, operation in this optimized power and pressure regime results in the prevention of gas phase polymerization and powder formation. While the use of low pressure and minimum power provides for the deposition of the highest quality material yet reported for microwave glow discharge processes, that process still suffers from an inability to control the specific activated species generated within the plasma. The two main points to bear in mind when discussing either the aforedescribed r.f. plasma glow discharge deposition methodology or the improvement thereover provided by the aforementioned low pressure microwave initiated glow discharge deposition methodology is that (1) in both of these plasma processes, material quality deteriorates relative to increases in the rate of deposition, and (2) it is impossible to control the kinetics of the gas phase chemistry in such a manner that the only species generated in the glow discharge plasma will be those species which, when deposited onto a surface of the substrate, will fabricate the highest possible quality of thin film material. In contrast thereto, it should be appreciated that if it were possible to control plasma chemistry, it would be possible to generate only the desired free radical or ionic species, and it would therefore be possible to deposit only the highest possible quality of thin film material. Further, in view of the fact that only desired free radical or ionic species are generated in the plasma, the material can be deposited at very high rates because it no longer is necessary to be sure that the dangling, broken, bent, strained, stressed, or other deviant bonding configurations of the host matrix of the depositing material have a chance to be healed through the use of such compensating elements as hydrogen and/or fluorine. It is to be specifically noted that the instant inventors are not claiming to be the first to have considered the possibility of depositing only specific metastable free radical or ionic species from which it is possible to fabricate a thin film of the highest possible quality; however, the instant inventors do believe they are the first to have invented a method of utilizing gas phase plasma kinetics in order to deposit the highest possible quality of thin film material by both generating only those desired free radical or ionic species from a gaseous precursor mixture and then depositing those desired free radical or ionic species at a very high, and hence commercially significant rate of deposition (i.e., orders of magnitude higher than the rate obtainable by employing microwave initiated glow discharge deposition for the same quality material). 3. Remote Plasma Excitation: The following paragraphs describe the present state of the art of depositing thin film materials from only desired precursor species by processes generally known as "remote plasma excitation". The term "remote plasma excitation", as used herein, refers to a process by which a gaseous precursor mixture is formed into a plasma of desired species at one location of a vacuumized chamber and those desired species are then deposited at a location of said chamber remote from the point of plasma formation. The reader's attention is specifically directed to the efforts of the two most respected scientists in field of remote plasma excitation, Drs. G. Lucovsky and I. Shimizu. Dr. Lucovsky, at North Carolina State and Dr. Shimizu at the University of Tokyo have conducted research directed toward the deposition of specifically preselected free radical species from a silicon-based plasma in order to obtain a silicon alloy film characterized by a low density of localized defect states in the energy gap thereof, excellent photoconductivity (the ratio of light to dark conductivity) and long charge carrier lifetimes (It is to be noted that the improvement in each of these parameters is to be compared to thin films of silicon alloy material deposited from r.f. or microwave initiated plasmas.). The currently relevant commercial deposition techniques which have been discussed in detail hereinabove can be generally characterized as "direct plasma enhanced chemical vapor deposition" processes. As used herein, "direct plasma enhanced chemical vapor deposition" will refer to a process by which a gaseous precursor mixture, containing the desired deposition species, is directly exposed to a source of excitation or fragmentation energy and the deposition species thereby created are deposited onto a substrate proximately disposed relative thereto. The most common example of such direct excitation processes are r.f. or microwave initiated glow discharge excitation of silane and hydrogen to deposit a thin film of hydrogenated amorphous silicon alloy material onto a surface of a contiguous substrate. As used herein, the term " activated species " will refer to microscopic objects which carry internal energy, whether atomic or molecular, free radicals, ions, or excited neutrals. This definition is to be contrasted with the use of the term by Dr. Lucovsky who believes that metastable, excited or non-ground state helium (He*) is generated when the energy transferring gas is exposed to the electromagnetic field. In contradistinction thereto, the instant inventors believe that the activated species are actually helium ions (due to an experimentally observed magnetic field dependency of the thin film deposition rate). However, the nature and characterization of those activated species is not critical to the operation of the method of the instant invention. It must further be noted that the term " activation region " or " plume of activated species ", as used herein, will refer to that volume of the evacuated enclosure in which the number of activated species which are generated by the electromagnetic field exceeds the number of activated species which are extinguished due to wall loss, collisions, etc. Lucovsky, et al (see the Journal of Non-Crystalline Solids, 12th ICALS, Prague, 1987 for a paper by Lucovsky and Tsu entitled "Differences Between Direct And Remote Plasma Enhanced CVD") teach the deposition of a thin film of amorphous silicon: hydrogen material by employing r.f. energy (13.56MHz) from which to generate a structurally confined activation region of excited helium atoms (such as helium free radicals, He*), which activation region is spacedly disposed from a heated substrate by at least 10 cm. The excited helium free radicals then migrate from the plasma region to interact with neutral silane gas (diluted with 90% argon), which silane gas is introduced above the heated substrate by a "showerhead" gas ring. Dr. Lucovsky claims that the He* atoms collide with the SiH₄, resulting in the creation of deposition free radical species of the silane as given by the following reaction: [He*] + SiH₄ → SiH₃ + H In other words, the thermodynamics and collision kinetics of helium metastable species with silane neutrals is of the correct energy to favor the formation of SiH₃, which SiH₃ free radical is believed by scientists to provide the highest quality silicon alloy material. The reaction products (SiH₃ and H) are specific silane fragments which undergo a chemical vapor deposition reaction on the exposed surface of the heated substrate. The noble gas atom, argon, has also been used in place of helium as the r.f. plasma activated metastable species. However, argon initiates a different fragmentation of the silane, thereby causing plasma polymerization of SiH₂ and silane to disilane, trisilane, etc. The result is the creation of large amounts of polysilane powder as well as the deposition of the silicon alloy film. These remote plasma excitation processes have also been employed for the deposition of thin films of silicon oxide (SiO x ) and silicon nitride (SiN x ) dielectric or insulating material. In the deposited dielectric films, the plasma of activated species typically include about 20% O₂ or N₂ in He, depending upon the desired composition of the film to be deposited. These activated species are then excited by an r.f. plasma so as to generate excited (O₂, He)* or a (N₂He)* metastable species. These activated metastable species then interact with SiH₄ (or other silicon-containing gas) as represented by the following unbalanced equations: I. (O₂He)* + SiH₄ → SiO₂ II. (N₂He)* + SiH₄ → Si₃N₄ thus depositing the thin films of silicon oxide or silicon nitride material upon the exposed surface of a heated substrate. Both of the aforedescribed thin films of dielectric materials and the thin films of semiconductor alloy materials are fabricated under substantially similar deposition conditions. More specifically, the energy transferring gas is introduced into the enclosure at a flow rate of between about 100 and 1000 SCCM; the gaseous silane precursor is introduced into the enclosure at a flow rate of approximately 5-25 SCCM; the deposition pressure within the enclosure is maintained at between about 40 Pa (300 mTorr) and 133 Pa (1 Torr); the applied r.f. power is maintained at about 5-50 W; and the substrate temperature is maintained at about 40 ° to 400 ° C. These operating parameters, particularly the flow rates of both the energy transferring gas in the first conduit and the background pressure in the enclosure are considered necessary so that: (1) the diffusion of silane gas back into the structurally confined activation region is substantially minimized; and (2) an acceptable density of the activated species from the energy transferring gas is extracted from the structurally confined activation region and directed towards the silane gas dispersal ring. It is very noteworthy that the aforementioned preferred flow rates and background pressure assure a mean free path for bimolecular collisions of a fraction of a millimeter, while the substrate is spacedly disposed approximately 5 centimeters from the collision region, i.e., the region in which, for instance, metastable He species, metastable O₂ species and SiH₄ molecule collide. This spatial arrangement was selected to guarantee that a plurality of localized collisions between the aforementioned metastable species and the silane molecules would occur before the material was deposited onto the surface of the heated substrate. However, the combination of pressure and mean free path at that pressure ensures that multiple collisions will occur prior to deposition and therefore that the depositing material will include many different species as opposed to the single desired species. Additionally, the multiple collisions prevent a high density of the single desired species from being deposited onto the substrate. It is no wonder that the deposition rate of desired free radical species remains so low. Turning now to the work of Dr. Shimizu, a modified process for semi-direct plasma excitation is described in a paper entitled "Growth Of Amorphous And Crystalline Silicon By HR-CVD (Hydrogen Radical enhanced CVD) authored by Shibata, Fukuda, Ohtoshi, Hanna, Oda and Shimizu and published in Materials Research Symposium Proceedings, Volume 95, 1987, pp. 225-235. In this paper Shimizu, et al propose a novel technique for the preparation of Si-based alloys. It is important to recognize the fact that the Shimizu, et al technique employs "hybrid excitation" in which the precursor deposition is both directly and remotely activated. The direct excitation occurs through direct exposure to the electromagnetic field and the remote excitation occurs as a product of interaction of the partially excited deposition species with the activated metastable species of the energy transferring gas. In the described HR-CVD technique, it is essential that the precursor deposition gas be struck by activated species of an energy transferring gas to secondarily form SiF n H m (where n + m is less than 3). The apparatus of Shimizu, et al includes coaxial tubes, in the interior one of which SiF₄ is transported and in the exterior one of which hydrogen gas and argon gas transported. The hydrogen gas is converted to atomic hydrogen through the direct exposure to a source of microwave energy. A second interconnected portion of the apparatus is a stainless steel deposition chamber in which a heated substrate is disposed. The SiF₄ is first directly exposed to the microwave energy in the interior tube and is secondarily exposed to the hydrogen plasma at the end of the inside tube to generate the deposition species. Typical deposition parameters are a SiF₄ flow of 45 SCCM, an Ar flow of 76 SCCM, an H₂ flow of 10 SCCM, a power of 440 W at 2.45 GHz, and a background pressure of 40 Pa (0,3.Torr). Not surprisingly, Shimizu, et al found that the location of the exit of the inside tube as well as the distance thereof from the substrate are important factors in determining the rate of deposition as well as the quality of the deposited film. Further, Shimizu, et al reported the presence of a negligible number of ionic species of the precursor deposition gas and therefore concluded that the free radical species of the precursor deposition gas formed the depositing species. Finally, note that Shimizu, et al obtain a rate of deposition of no more than 5 nm/S; however, this relatively high deposition rate was due to the direct excitation of the precursor deposition gas. While this direct excitation resulted in drastically improved rates of deposition, the ability to control the nature of the depositing species and therefore the ability to maintain high electronic film quality was thereby forfeited. Despite the extensive research conducted by the two above mentioned groups of Drs. Lucovsky and Shimizu, the goal of depositing high quality thin films at relatively high deposition rates (vis-a-vis, r.f. deposition quality and rates) has gone unfulfilled. Indeed, the truly remote plasma excitation processes thus far developed are capable of deposition rates of less than 0.1 nm/S of intrinsic amorphous silicon alloy material characterized by a density of defect states on the order of approximately 10¹⁶ to 10¹⁷ defects per cm⁻³ per eV. Ironically, the inventors of the present invention have found that the parameters which earlier researchers deemed critical, (i.e., the flow rates of both the precursor deposition gas (such as SiH₄) and the energy transferring gas (such as He), the background pressure in the enclosure and the spacing of the substrate relative to the activation region (the region in which the energy transferring gas is activated) have been erroneously selected to prevent the rapid deposition of high quality thin film material. While the spaced disposition of the activation region from the substrate is certainly effective in preventing back diffusion of precursor deposition species, such as silane, into the plasma of activated species; (1) the length of this "drift zone"; (2) the background pressure existing within the enclosure; and (3) the necessity of structurally enclosing (as with walls) the activation region, causes the density of He* species to rapidly decline as the distance from the plasma region increases. This distance can be increased to such an extent that an insufficient number of activated species arrive at the collision region to exhaust (collide with) 100% of the precursor deposition gas. Additionally, the length of the "drift zone" and the structural confinement of the activation region allows for an excessive number of He*-He* collisions and He* to wall collisions, which collisions reduce the number of metastable He available for interaction with the deposition precursor gas. Of course, as the number of collisions between the activated species of the energy transferring gas and the precursor deposition gas decrease, the number of deposition species available correspondingly decreases and the deposition rate drops. Therefore, it has been demonstrated that prior art remote excitation techniques realized it was necessary to (1) generate a high flux of activated species of an energy transferring gas; (2) transport a high number of those activated species from the activation region to the collision region by limiting the deactivation of activated species through events such as (a) activated species intercollsions, (b) activated species-wall collisions, and (c) the proximate disposition of the collision region relative to the activation region; (3) prevent the back diffusion of the precursor deposition gas from the collision region into the activation region (at which region direct excitation thereof would occur); and (4) prevent multiple collisions between the deposition species and all other molecules, atoms, electrons, particles or other species, whereby only desired deposition species are deposited onto the substrate. However, all known prior art remote excitation techniques have been unable to accomplish these objectives. Only by providing the ability to independently control each one of the four aforementioned objectives is it possible to deposit high quality films of a given composition at an optimized rate of deposition. According to the present invention a choke condition is created adjacent the aperture in the first conduit mentioned in the opening part of claim 1 so as to provide a localized high pressure of energy transferring gas flowing therethrough whereby a substantial pressure is maintained differential between the pressure adjacent the aperture in said first conduit and the background pressure in said enclosure. Further embodiments of the invention are claimed in sub-claims. In one embodiment, the instant invention not only provides for the creation of only desired energized deposition species from a precursor deposition gas, such as silane; but also provides the ability to independently control each of the four parameters critical to the remote deposition of those desired species so as to obtain a high quality film at a commercially meaningful, heretofore unobtainable, rate of deposition, (i.e., significantly higher than the rate of deposition. More specifically, there is disclosed herein a method of: (1) generating the highest possible number of activated species, through the use of an intense microwave initiated glow discharge plasma; (2) transporting the activated species to the collision region, without losses occasioned by either wall or activated species collisions (through the use of a substantial pressure differential and the elimination of structural confinement of the activation region); (3) preventing the back diffusion of the precursor deposition gas from the collision region to the activation region (through the use of the substantial pressure differential and transonic velocity of the energy transferring gas in the first conduit); and (4) preventing multiple collisions of the energized deposition/etchant species with all other particles (through the use of an optimized background pressure to establish a desired mean free path). It is to be noted that the use of the aforementioned transonic velocity further imparts directional momentum to the activated species of the energy transferring gas which enables those activated species to travel the distance from the activation region to the collision region within 100 µs, i.e., the lifetime of the activated ionic species of the energy transferring gas at the background pressure of 0,665-1,33 Pa (0,005-0,010 Torr). There is disclosed herein a method of generating a high flux of activated species from an energy transferring gas. The method comprises the steps of providing an enclosure, maintaining the interior of said enclosure at sub-atmosphere background pressure, introducing an energy transferring gas into the interior to said enclosure through at least one aperture formed in a first conduit at a pressure which creates a pressure differential between the pressure of the energy transferring gas in said first conduit and the background pressure sufficient to activate a high flux of activated species of said energy transferring gas in an activation region, and operatively disposing a substrate interiorly of the enclosure and spacedly located remote from the activation region. The flow rate of the energy transferring gas in the first conduit is selected so as to provide a sufficient pressure of energy transferring gas adjacent the aperture for initiating a plasma from the energy transferring gas at a power-pressure-aperture size regime which is at the substantial minimum of the Paschen curve. The size of the aperture may be reduced relative to the size of the first conduit so as to form a choke adjacent the aperture for providing the high pressure of said energy transferring gas. The time of residency of the energy transferring gas adjacent the aperture may be increased, as by a magnetic field, so that the pressure of the energy transferring gas adjacent the aperture is also increased. A cooling mechanism, such as a water jacket may be provided for the first conduit. A protective sleeve, such as a graphite sleeve, is provided by which degradation of the surface of the first conduit adjacent the aperture is reduced. The energy transferring gas is selected from the group consisting of, but not limited to hydrogen, the noble gases, CH₄, CF₄, and combinations thereof. In one preferred embodiment, the further step of forming a high number of activated species from the energy transferring gas is specified for etching material from the surface of said substrate. In a second preferred embodiment, the high density of activated species are utilized to deposit material onto the surface of the remotely located substrate. A further step may be employed by which a precursor deposition gas is introduced into the interior of the enclosure through a second conduit, the point of introduction of said precursor deposition gas from said second conduit into the enclosure is spacedly disposed relative to the activation region. In this manner collisions of the high number of activated species with said precursor deposition gas define a collision region in which a high density of energized deposition species of the precursor deposition gas is generated. The precursor deposition gas is selected so that, upon collision of the activated species of said energy transferring gas therewith, one or more desired deposition species of the precursor deposition gas will be formed. The above-described and other objects, advantages and features of the instant invention will become more apparent upon reference to the Drawings, the Detailed Description Of The Drawings, the Claims which follow hereinafter. BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a perspective view, partially cut-away, illustrating the interior of the vacuumized enclosure of the instant invention, in which enclosure a plume of activated species of an energy transferring gas is directed to collide with a precursor deposition gas for the generation of energized deposition species and the deposition of those deposition species onto the surface of a remotely positioned substrate; Figure 2 is an enlarged, cross-sectional side view, partially cut-away, illustrating the position of the first conduit, through which the energy transferring gas is introduced into the enclosure, relative to the microwave applicator; Figure 3 is an enlarged, partially cut-away side view of the first conduit and microwave applicator depicted in Figure 2, said conduit modified to extend approximately half way into the interior of said applicator; and Figure 4 is a graphic representation of modified Paschen curves, for different volume plumes of activated species, the curves having pressure displayed on the abscissa and power displayed on the ordinate, which Paschen curves are reproduced from an article by A.D. MacDonald, and S.C. Brown, published in Physical Review , Vol. 75, p. 411, (1949) DETAILED DESCRIPTION OF THE INVENTION I. THE REACTION APPARATUS Referring now to the drawings and particularly to Figure 1, there is illustrated therein a perspective view, partially cut-away, of a reaction apparatus, generally referenced by the numeral 10. The apparatus 10 as depicted in Figure 1, includes a generally rectangularly shaped, hollow, vacuumizable enclosure 12. The enclosure 12 includes a pivotable front face 14 which functions as a door 14 for loading and removing substrates from the interior of the enclosure. The inner periphery of the door 14 is equipped with one or more vacuum seal rings (not shown) and one or more latches, such as 16 and 18, which latches are adapted to compress the seal rings for assuring an airtight closure between ambient conditions externally of the enclosure and vacuum conditions interiorly of said enclosure. The vacuumized enclosure 12 further includes a pump-out port 20 in the bottom wall 12 c thereof adapted for connection to a powerful vacuum pump 22 which is employed to: (1) exhaust depleted reaction products from the hollow interior thereof; and (2) to maintain the interior of said enclosure 12 at an appropriate sub-atmospheric pressure. As will be explained in greater detail hereinafter, the background pressure will be carefully selected to initiate and sustain the high rate deposition or etchant process carried out interiorly of the enclosure. The apparatus 10 further includes at least a first elongated conduit 24 of diameter d, wherein d is preferably between about 0.5 to 3.0 cm, extending through a side wall 12 a into the interior of said vacuumized enclosure 12. The first, hollow conduit 24 includes at least one portion, the distal end portion 24 a thereof, having an aperture 26 formed therein. The first conduit means 24 and the aperture portion 24 a thereof are adapted to, respectively, transmit and introduce an energy transferring gas from a source (not shown) into the interior of said vacuumized enclosure 12, preferably to a point immediately adjacent apparatus adapted to provide activated species from said energy transferring gas. In the preferred embodiment depicted in Figure 1, the activation apparatus will take the form of a radiant microwave applicator 28, discussed in greater detail hereinbelow. In one preferred embodiment, the first conduit 24 is adapted to introduce an energy transferring gas selected from the group consisting essentially of hydrogen (H₂) methane (CH₄) the noble gases and combinations thereof. Alternatively, and in another preferred embodiment, the above mentioned energy transferring gases may also include one or more diluent or dopant gases, including, but not limited to, O₂, NH₃, N₂, NH₄, CH₄, PH₃, PH₅, BF₃, BF₅, B₂H₆, BH₄, and combinations thereof. Regardless of the composition of the energy transferring gas employed, the aperture 26 formed at the distal end of the first conduit 24 must be capable of delivering a selected flow rate (as measured in terms of SCCM, i.e., standard cubic centimeters per minute) of said energy transferring gas. The flow rate is selected to provide a sufficient pressure of the energy transferring gas adjacent said aperture 26 for initiating the activation of said energy transferring gas at a power-pressure aperture size regime which is at the substantial minimum of the modified Paschen curve, (the details of the Paschen curve will be discussed hereinafter with respect to Figure 4). The first conduit 24 may further include means for reducing the diameter thereof adjacent said aperture 26, which reducing means may, in one embodiment, simply take the form of an overcoat 230 as depicted in Figure 2. By so reducing the flow path for the energy transferring gas, it is possible to create a "choke condition" in the first conduit 24 adjacent the aperture 26 so as to provide a localized high pressure of the energy transferring gas. As used herein, the term "choke condition" refers to the condition which occurs when the speed of the energy transferring gas passing through the aperture 26 in the first conduit 24 reaches transonic speed. The choke condition generally is that condition which occurs in compressible gas (or fluid) flow when, for a conduit of a uniform size, the speed of the gas passing through said conduit reaches transonic velocity. It is at this condition that any rise in the flow rate of the energy transferring gas results in an increase in pressure rather than velocity. It is also this condition which defines the choke mode and it is precisely this effect which allows the pressure to be increased for operation at the substantial minimum of the Paschen curve. This localized high pressure creates a sufficient pressure zone for the energy transferring gas flowing through the first conduit adjacent the aperture portion 24 a so that a plasma may be initiated and maintained at a power level which can be independently controlled. In an alternative embodiment, the pressure within the aperture portion 24 a of the first conduit 24 may be easily controlled by employing a solenoid therewithin, which solenoid may be selectively constricted or relaxed so as to regulate the flow rate of energy transferring gas passing therethrough and hence the pressure which exists adjacent said aperture portion 24 a . The first conduit 24 may also include a coil, such as 235 depicted in Figure 2, wrapped thereabout for providing an applied magnetic field immediately adjacent the aperture portion 24 a . The applied magnetic field can be energized to increase the residence time of the activated species of the energy transferring gas in a plasma zone which is created immediately adjacent the aperture 26 of the first conduit 24. As will become more apparent from the description which follows hereinafter, the magnetic field established by the coil 235 serves to confine the plasma of ionized species created by the microwave applicator to the immediate vicinity of the distal aperture portion of the first conduit. In this manner, a varying magnetic field can be utilized to control the density of ionized species which can be directed for downstream collisions. Turning now in greater detail to Figures 2 and 3, there is illustrated therein two preferred, modified embodiments of the first conduit 24 discussed with respect to Figure 1. Figure 2 specifically depicts a first preferred embodiment, wherein the first conduit 224 is fabricated from a material which is not microwave transmissive, such as stainless steel or a like microwave reflecting metal. As in the Figure 1 embodiment, the first conduit 224 includes at least one portion, the distal end portion 224 a thereof, having an aperture 226 formed therein. The non-transmissive first conduit 224 also includes an external, concentrically disposed cooling jacket 228 wrapped thereabout, which jacket is adapted to facilitate the circulation of a cooling medium, such as water, therethrough. In this manner, the cooling jacket 228 is able to maintain said first conduit 224 at a uniform, relatively low temperature despite the intense heat generated by the highly energetic, activated species created at said distal end of said conduit by, for instance, microwave energy or r.f. electromagnetic fields. Aside from water, the cooling medium may also be selected from the group of fluids consisting essentially of silicone oil, freon, nitrogen, hydrogen, helium, and other cooling media well known to those ordinarily skilled in the art. More particularly, the cooling jacket 228 is necessitated due to the heat which is generated by the intensity of the activation region initiated and sustained adjacent said aperture 226 at the distal end of said conduit. Note that the energy transferring gas effusing from said aperture 226 of the first conduit 224 is subjected to the intense electromagnetic field created by the microwave energy transmitted through the radiant microwave applicator 232. The intense electromagnetic field disassociates the energy transferring gas. It is the subsequent chemical reaction of disassociated species which liberates heat resulting in the build-up of very high temperatures as well as the formation of a highly reactive plasma of activated species of the energy transferring gas. Accordingly, the aperture portion 224 a and the first conduit 224 reach temperatures sufficient to melt the material from which the first conduit is fabricated. If not for the presence of the cooling jacket 228, this material would decompose due to the extremely high temperature conditions and become a source of contaminants within the vacuumized enclosure. These contaminants would ultimately degrade the quality of the plasma activation process due to the deposition of contaminated material onto the substrate. The first conduit 224, depicted in Figure 2, further has affixed to the aperture portion 224 a thereof the protective overcoat 230 formed of a high temperature resistant, sputter resistant, relatively benign material. This protective overcoat 230 is adapted to protect the material from which the aperture portion 224 a of the first conduit 224 is fabricated, from degradation resulting from the sputtering thereof by the high temperature, highly energetic, activated species of the energy transferring gas. Note that, and as will be specified in detail hereinafter, the activated species of the energy transferring gas forms a plume, generally 231, of pressure isobars adjacent the aperture portion of the first conduit 224, which plume 231 defines an activation region of activated species. As will also be detailed hereinafter, the boundaries of the plume of activated species are specified by the pressure differential which exists between the gas flowing through the interior of the first conduit and the background pressure existing in the interior of the enclosure. As should be apparent, material which is sputtered from the surface of the first conduit 224 would degrade the quality of the activated species in the plume 231; and more importantly, the quality of the subsequently deposited thin film material would correspondingly deteriorate. Thus, the protective overcoat 230 is preferably fabricated from a material which is resistant to a high temperature sputtering environment; or alternatively, a material which is relatively benign when incorporated into the ultimately deposited film. In a preferred embodiment, graphite is employed as the material from which the protective overcoat 230 is fabricated. Graphite is not only highly resistant to high temperature and high temperature sputtering processes, but when the apparatus 10 is employed for the deposition of semiconductor al loy materials, graphite is substantially electrically benign to the desired characteristics of that deposited semiconductor film. As was mentioned hereinabove, and as is more particularly illustrated in Figure 2, the first conduit 224 is adapted to introduce the energy transferring gas flowing therethrough into the hollow interior of the activation means 232, which activation means is located immediately adjacent said aperture 226. The first conduit 224 with the concentrically disposed cooling jacket 228 wrapped thereabout are spacedly positioned adjacent an aperture 234 formed in side wall 233 of said activation means 232. The diameter of the preferably circularly shaped aperture 234 is about 0,6-2,5 cm (1/4 to one inch) larger than the outer diameter of the cooling jacket 228, so as to facilitate the passage of the energy transferring gas directly into the interior of said activation means 232, while providing an adequate insulating space between the side wall 233 of the activation means 232 and the periphery of the concentrically disposed first conduit and cooling jacket so as to prevent sparking or other electrical coupling therebetween. As should be readily appreciated from a perusal of the embodiment depicted in Figure 2, the first conduit 224 and the cooling jacket 228 do not actually extend into the interior of the activation means 232 (which activation means, as mentioned hereinabove, is preferably a radiant microwave applicator). This is because, if the first conduit 224 were to be positioned interiorly of the hollow, rectangularly shaped applicator which the first conduit 224 and the cooling jacket 228 were fabricated of materials which were non-transmissive to microwave energy, either (1) the microwave energy would be absorbed by those materials or (2) proper coupling between the microwave energy transmitted by the applicator and the plasma would be severely deteriorated. However, since the first conduit 224 is positioned (in Figure 2) exteriorly of, but adjacent the side wall 233 of the radiant microwave applicator 232, (1) the non-transmissive materials from which the applicator is fabricated does not interfere with plasma coupling and (2) the activated species of the energy transferring gas are primarily generated outside of the aperture 226 formed in the distal end of said first conduit 224. Further, due to the protective overcoat 230 affixed thereto, degradation of the surface material of that conduit is prevented. Referring now to Figure 3, there is illustrated a second preferred embodiment of the first conduit, now generally 324, with the cooling jacket 328 again concentrically disposed thereabout. As opposed to the Figure 2 embodiment, Figure 3 depicts the first conduit 324 and the cooling jacket 328 as fabricated from a microwave transmissive material such as quartz. It should be appreciated that the cooling jacket 328 plays a critical role in the embodiment of Figure 3 because the first conduit 324, being formed of quartz, has a more limited ability to withstand the elevated temperatures which are generated therewithin. The aperture 326 of the first conduit 324 is preferably reduced in diameter relative to the diameter of the remainder of the first conduit 324. Thus, the diameter of the aperture 326 is typically in the range of about one-half to one millimeter (as compared to .5-3 mm. for the diameter of the conduit), while the length of the channel defined by the aperture 326 is typically about one-half to two millimeters long. This restriction in the diameter of the aperture 326 is required so that the pressure of the energy transferring gas flowing through the first conduit 324 reaches the choke mode adjacent the aperture, i.e., reaches levels sufficient to insure that the energy transferring gas flows therethrough at substantially transonic velocity as that gas exits the first conduit. In this manner, the pressure at the aperture 326 can be controlled so as to operate at the substantial minimum of the Paschen curve. The high temperature plasma region 336 is formed primarily interiorly of the conduit and will cause the chemical vapor deposition of material thereupon. As may be appreciated from a perusal of Figure 3, in this embodiment, the first conduit 324 and the cooling jacket 328 actually extend into the hollow interior cavity of the radiant microwave applicator 332. This allows for the generation of the activated species of the energy transferring gas to occur within that first conduit 324. Thus, the cooling medium circulated through cooling jacket 328, should preferably, like the material from which the first conduit 324 and the cooling jacket 328 are fabricated, be substantially microwave transmissive. Alternatively, the difference between the outer diameters of the cooling jacket and the first conduit must be made relatively small so that the circulating cooling medium is unable to absorb too great a percentage of the microwave energy. Preferred microwave transmissive cooling media include silicone oil and freon. While the high temperature plasma region of activated species 336 is formed primarily within the aperture portion 324 a of the first conduit 324 (which plasma region is disposed inside the radiant microwave applicator 332), it is noteworthy that a tongue of plasma 336 a extends beyond the aperture 326, into the interior of the radiant microwave applicator 332 and pressure isobars thereof could extend into the enclosure. The size of the tongue 336 a , and the distance it extends into the applicator and enclosure is a function of the flow rate of energy transferring gas, and hence the pressure of the energy transferring gas in the first conduit. It is important to note that the tongue 336 a acts as a "pilot light" which ignites and sustains the plume of the activated species 331 outside of the first conduit. This pilot light is required since the embodiment of Figure 3 utilizes a microwave transmissive (quartz) conduit and hence must be operated at a power level of microwave energy which is relatively small, e.g., less than about 2 kilowatts. This power level, while protecting the integrity of the quartz material, would otherwise be insufficient to ignite the plume 331. The pilot light serves to provide an additional source of ions so that the power required to initiate and sustain a plasma of activated species is reduced by as much as a factor of two. Since the aperture portion 324 a of the first conduit 324 is disposed within the microwave applicator 332, the activated species of the energy transferring gas are primarily generated interiorly of said first conduit 324. Specifically, an activation region 336 is formed in that aperture portion 324 a of the first conduit 324 which resides within the microwave applicator 332. Due to the highly intense energy provided by the generation of activated species within the activation region 336, the material from which the first conduit 324 is fabricated (particularly adjacent the aperture portion 326), is degradable by the gradual sputtering of the interior diameter thereof. In the event that the first conduit is fabricated of quartz, the sputtered quartz, in addition to weakening the structural integrity of the conduit 324 and increasing the size of the aperture 326, degrades the quality of the deposited thin film material. Therefore, it should be apparent that the Figure 3 embodiment can only be employed in those instances in which the power level of microwave energy utilized is relatively small, e.g., less than 2kw. As is depicted in Figure 3, the first conduit 324 and the concentrically disposed cooling jacket 328 extend through an aperture 334 formed in the side wall 333 of the radiant microwave applicator 332, so that the distal end of the first conduit may be positioned approximately half way through the hollow interior of the microwave applicator 332. Note that in this embodiment, since the first conduit 324 and the cooling jacket 328 are fabricated of dielectric material, there is no need to maintain a gap between the applicator and the outer diameter of the cooling jacket (as was true for the Figure 2 embodiment). By such an operative disposition of the first conduit 324 relative to the microwaves transmitted within the applicator 332, the activation region effectively occurs interiorly of said aperture 326 (although the "pilot light" effect does aid in igniting the tongue of activated species exteriorly thereof). Returning now to Figure 1, the deposition apparatus 10 further includes the aforementioned microwave applicator 28, which applicator is adapted to deliver electromagnetic energy at 2.45 GHz to the energy transferring gas flowing through the first conduit 24. While the applicator 28 is depicted as a radiant microwave applicator, said applicator may be selected to deliver any type of energy selected from the group consisting essentially of microwave energy, r.f. energy, low frequency a.c. energy, or photo-energy in the form of a high intensity pulsed laser. However, and as previously mentioned, since microwave energy can most effectively provide a high density, large volume plasma of activated species, the applicator 28 is preferably formed as a microwave applicator, preferably a radiant microwave applicator (as opposed to slow-wave applicator) adapted to transmit at least 1.0 kw of microwave power and preferably 5 kw or more of microwave power at a frequency of 2.45 GHz. As clearly depicted in Figure 1, said applicator 28 is an elongated, hollow, generally rectangularly shaped, copper waveguide structure adapted to transmit microwave energy from a magnetron (not shown) to the energy transferring gas introduced into the enclosure from the first conduit 24. Said waveguide applicator 28 enters said enclosure 12 through a microwave transmissive window 29, which window is vacuum sealed to a bottom face 12 c of the enclosure. This type of vacuum sealed window 29 is fully disclosed in US-A-4 931 756, the disclosure of which is incorporated herein by reference. The microwave applicator 28 is seated upon the upper, interior plate 29 a of that window 29. In order to achieve the function of coupling the introduced microwave energy to the introduced energy transferring gas, the first conduit 24 extends through an aperture 30 formed in the side face 32 of the waveguide 28 for receiving the energy transferring gas. Therefore, the structure and function of the aperture 30 is identical to that depicted in and described with reference to Figures 2 and 3. Accordingly, the aperture 30 is adapted to facilitate the passage of the first conduit 24 and the energy transferring gas carried therewithin into an activation region 34 formed adjacent the aperture portion 24 a of the first conduit 24 so that the plume of activated species extends from the interior of said applicator 28. The radiant microwave applicator 28 further includes cut-away section 36 formed in the face 35 thereof opposite the face 32 in which the aperture 30 is formed. The cut-away section 36 has a diameter larger than the diameter of the aperture 30 and preferably at least about 50.8 mm (2 inches) so as to provide for the movement of expanding pressure isobars (231a - c in Figure 2 and 331 a - c in Figure 3) of the plume of activated species without having those activated species degrade too much of the microwave applicator material. It should therefore be understood that the applicator cut-away section 36 is adapted to provide a means of directed escape for the activated species of the energy transferring gas from within said applicator 28. The microwave applicator 28 further includes a closed end plate 40 to prevent the escape of unused microwave energy into the interior of the vacuumized enclosure 12. It is to be noted that the maximum size of the cut-away section 36 of face 35 of the applicator 28 will be determined by balancing the facts that (1) the smaller the opening is made, the more material therefrom will be etched away, but the more the microwave energy is confined; while (2) the larger the opening is made, the less material is etched therefrom, but the more the microwave energy leaks into the enclosure. The cutaway section 36 may further include a microwave absorptive or reflective screen or other means adapted to prevent the microwave energy from entering the enclosure. This becomes particularly significant as the pressure differential between the background pressure and the pressure of the energy transferring gas in the first conduit is reduced to approach the aforementioned factor of at least 5. The deposition apparatus 10 further includes at least one remotely located, generally planar substrate 50 operatively disposed within the enclosure 12 and at least spaced a distance from the activation region 34 sufficient to prevent said thin film material depositing thereupon from direct exposure to the electrons present in that region. The apparatus may further preferably include means 52 adapted to heat and or apply an electrical or magnetic bias to the substrate 50. It is to be understood, however, that the use of heat or a bias is not required to practice the invention disclosed herein. In a preferred embodiment, the substrate 50 is operatively disposed so as to be substantially aligned with the first conduit 24 so that a flux of the activated species generated in the activation region 34 can be directed thereat for deposition thereupon. In a preferred embodiment, the deposition apparatus 10 may also be equipped with a second elongated, hollow conduit 60, having at least one aperture 62 formed at the distal end 60 a thereof. The apertured end 60 a of the second conduit 60 extends through the top wall 12 b of the enclosure 12 and into the interior thereof so that the aperture 62 terminates in close proximity to said substrate 50. The second conduit 60 is adapted to deliver a flow of a precursor deposition gas from a source (not shown) into a collision region 65 which is created adjacent said substrate 50. The precursor deposition gas is typically selected from the group consisting essentially of a silicon-containing gas, a germanium-containing gas, a carbon-containing gas, and combinations thereof. Specific examples of preferred precursor deposition gases include, but are not limited to, SiH₄, SiF₄, Si₂H₆, GeH₄, Ge₂H₆, GeF₄, CH₄, C₂H₆, and combinations thereof. Alternatively, the precursor deposition gas may be a precursor etchant gas such as NF₃, CF₄, fluorocarbons, chlorocarbons and combinations thereof. As previously mentioned, the precursor deposition (or etchant) gas is introduced by the second conduit 60 into the collision region 65. The collision region 65 is disposed in the path of travel of the activated species of the energy transferring gas as those activated species are directed from said activation region 34 toward the substrate 50. In this manner, activated species from the activation region 34 are directed towards the collision region 64 where said species collide and interact with said precursor deposition gas so as to create a desired energized deposition species. It is to be noted that the collision region 64 should be disposed a distance from said substrate 50 selected so that the desired deposition species created in the collision region 64 will uniformly deposit over the entire surface of the substrate 50 without encountering multiple collisions with either other activated species or other deposition species formed in the collision region. In a preferred embodiment, the background pressure to which the enclosure 12 is evacuated provides for a mean free path for the free radical deposition species of approximately 1-15 cm. Therefore, by spacing the substrate a distance of 1-15 cm. from the collision region, the entire surface thereof will be covered with a uniform thin film of material. As the size of the substrate upon which thin film material must be deposited increases, the background pressure must be reduced so as to correspondingly increase the length of the mean free path. Note that since the activated species of the energy transferring gas may contain certain ionic species, which upon impact with the substrate, may be detrimental to the depositing thin film, it is possible to angle the substrate with respect to the activation region to substantially reduce the impact of the substrate with the ionic species. Note further that this angling does not reduce the rate of deposition since the mean free path of the energized deposition species is unaffected. II. THE METHOD OF CREATING A HIGH FLUX OF ACTIVATED SPECIES While the apparatus described hereinabove has been designed so as to be particularly adapted to carry out the principles of the instant invention, it is to be understood that other modified embodiments of this apparatus may be used with equal advantage and it is the practice of the method rather than the specific apparatus which defines the true scope of the instant invention. It will, however, be necessary to make periodic references to the aforedescribed apparatus in order to more clearly explain the practice of the operative concepts of the method disclosed herein. In the most general terms of one embodiment of the instant invention, there is disclosed a novel method of generating a high flux and density of activated species from an energy transferring gas in an activation region which is located interiorly of the evacuated enclosure. The high flux of activated species of the energy transferring gas may then be directed to violently interact with a precursor deposition/etchant gas in a collision region so as to yield a high density of only desired energized deposition/etchant species, which energized species react with the exposed surface of a substrate spacedly located relative to the activation region. Alternatively, the high flux of activated species of the energy transferring gas may be employed to directly react upon the surface of the remotely located substrate. In either event, the novel concept of the instant invention is the ability to generate that high flux of activated species, which activated species are adapted to move to a remote location without losing their energy. Before providing the specifics of the critical parameters which enter into the ability to practice the method of this invention, the crucial question to be asked is how the (what has been termed) "novel" remote excitation process of the instant invention differs from the remote excitation work heretofore employed by other skilled researchers in the field. The answer, which will be further expounded upon in the pages which follow, is that the instant inventors employ a significant pressure differential between the energy transferring gas flowing through the first conduit and the background pressure which exists in the vacuumized enclosure. It is this pressure differential which differentiates the work described herein from Drs. Lucovsky and Shimizu, as well as the work of all other published researchers of which the instant inventors are aware. Unfortunately, it is impossible, due to all of the deposition/etch parameters which must be considered to place a numerical value on the pressure differential which must exist in order to generate the high flux of activated species described herein; however, two simple manners of differentiating over other remote excitation processes do exist. In the excitation process described herein and due to the pressure differential which exists, the volume occupied by the plume of activated species is not limited, without structural confinement, to the volume over which the electromagnetic energy acts in the enclosure. In marked contrast thereto, in all other remote or direct excitation processes, because the plasma region and the deposition region are maintained at substantially identical pressures, the volume occupied by the plasma of activated species of the energy transferring gas is limited by structural walls to be substantially coextensive with the volume of space occupied by the electromagnetic energy. Of course, it should be appreciated that this difference in plasma volume, vis-a-vis the volume of the electromagnetic field, is also pressure dependent to the extent that the flow of energy transferring gas is sufficient not to be exhausted by the length over which the field acts. The second manner in which the instant invention differentiates over the prior art is by maintaining a choke condition in the first conduit through which the energy transferring gas flows and is introduced into the enclosure. This choke condition determines that the velocity of the energy transferring gas will be transonic, thereby imparting directional momentum to the activated species thereof. In operation, the method of the subject invention is carried out in a vacuumized enclosure or chamber of the type generally described with reference to Figure 1. The vacuumized enclosure is first evacuated to a background pressure which, in conjunction with the substantially transonic flow rate of the energy transferring gas interiorly of the first conduit, will allow for the subsequent initiation and maintenance of a plasma of activated species of the energy transferring gas, which plasma has been carefully controlled to occur at the substantial minimum of the Paschen curve. It therefore becomes critical to select a pump which is sufficiently powerful to evacuate the enclosure to the low background pressure, despite the high flow rate of energy transferring gas constantly introduced thereinto. In one preferred embodiment, the pump is capable of evacuating and maintaining the enclosure to a background pressure of less than about 6,65 kPa (50 Torr) and preferably in the range of approximately 13 mPa (0,01 mTorr) to 1,33 Pa (10 mTorr) although the background pressure need not be limited to any given value. Therefore, it should now be appreciated that each parameter (which relates to achieving a high flux of activated species and then having a high number of those activated species excite substantially all of a remotely introduced precursor deposition/etchant gas) can be independently controlled. Firstly, the microwave applicator power can be controlled to provide the high flux of activated species. Secondly, since no structural confinement exists and since the flow of the energy transferring gas is transonic, the loss of activated species due to collisions of activated species with walls prior to reaching the collision region is substantially eliminated and said activated species are transported to said collision region within the lifetime of ionized species thereof. Thirdly, because of the substantial pressure differential, the back diffusion of the precursor deposition/etchant gas has been eliminated. Fourthly, the low background pressure provides a long mean free path which prevents multiple collisions between the energized deposition/etchant species and all other particles prior to the deposition of those species on the substrate. As specifically described, there is introduced into the interior of the vacuumized enclosure, inter alia, the energy transferring gas, which introduction is accomplished by a first conduit preferably having at least one aperture formed at the distal end thereof. The aperture is typically dimensioned to have a diameter of between about 0.25 to 3.0 cm and may be equipped with a solenoid operated aperture reduction structure and/or a protective overcoat, both of which elements have been fully described hereinabove. The energy transferring gas is typically selected from the group consisting of the noble gases, hydrogen, methane, etchant gases, and combinations thereof. In a preferred embodiment, the energy transferring gas is helium, which when appropriately excited, yields long-lived activated species. Additionally, the energy transferring gas may include a number of diluent or dopant gases including, but not limited to, O₂, NH₃, N₂, NH₄, H₂, CH₄, PH₃, PH₅, BF₃, BF₅, B₂H₆, BH₄, and combinations thereof. The function of the diluent or dopant gas is to provide a source of an element to be incorporated into the deposited film. For example, if a thin film of silicon:germanium alloy material is being deposited upon the spacedly disposed substrate, the film may be rendered slightly p-type by the addition of small amounts of a p-type dopant, such as BF₃, into the flow of the energy transferring gas. Alternatively, in the deposition of a layer of insulating SiO x material, it will be necessary to include small amounts oxygen in the stream of the energy transferring gas. Regardless of composition, it is important that the energy transferring gas be delivered through said first conduit to a point immediately adjacent the activation means, such as directly into the interior of the radiant microwave applicator discussed hereinabove. While the activation energy may be selected from the group consisting of a.c. energy, r.f. energy, microwave energy, photoactivation energy, and combinations thereof, in a preferred embodiment, the activation energy is microwave and the activation means is a radiant microwave applicator, such as the aforementioned radiant microwave waveguide which extends into the interior of the vacuumized enclosure. The radiant microwave applicator is adapted to provide about 1-10 kw of microwave power at a frequency of 2.45 GHz. The energy transferring gas is delivered from the aperture in the first conduit through an opening hole formed in the side wall of the microwave applicator into an activation region located at least partially within the hollow interior of said applicator. The activation region is clearly defined as that region in which a plume of the activated species of the energy transferring gas is formed. The high flow rate of the energy transferring gas exiting the first conduit relative to the background pressure within the enclosure also defines a series of concentric pressure isobars which serve to limit the volume occupied by the plume of the activated species of that energy transferring gas. The energy transferring gas is preferably delivered by the first conduit at a flow rate of at least about 100 SCCM, and more preferably approximately between 100-2000 SCCM. In this way, it is possible to maintain a preferred pressure differential of at least about a factor of five times difference between the background pressure that exists within the interior of the enclosure (less than about 6,65 kPa (50 Torr), and preferably 13,3-133 mPa (0.1-10 mTorr) and the pressure of the energy proximate the aperture of the first conduit (which pressure may be as high as about 1,33-4 kPa (10-30 Torr). It should be apparent that the pressure within any given isobar decreases with distance away from the aperture in the first conduit. Therefore, at any given power, the slope of the Paschen curve will provide a pressure-determined boundary of the activation region. Additionally, and as may be appreciated from a perusal of Figure 4, the pressure of the activated species of energy transferring gas within a plume of a given volume determines the power level which must be applied to form a plasma thereform. In that regard, Figure 4 depicts a series of discrete Paschen curves (numbered 1-4) for initiating and sustaining plasmas which occupy varying volumes. Plotted along the abscissa of the Figure 4 graph is the pressure of the activated species of the energy transferring gas within a given isobar, in kPa and plotted along the ordinate is the field applied in V/cm. Each Paschen curve is unique to a plume of a given volume. For example, curve 1 describes the pressure/power regime required for a generally spherically shaped plume, the volume of which can be be calculated given the diameter (L) equal to 2.54 cm. It not only is important to operate at the minimum efficiency, but operation at the minimum of the Paschen curve allows for minor variations of pressure without falling off the curve and having the plasma extinguished. For instance, in order to operate at the substantial minimum of Paschen curve 1 (the most efficient regime in which to operate), a pressure of approximately 1,33 kPa (10 Torr) and a power level of approximately 40 V/cm is required. Note that in selecting the correct pressure-power regime in which to operate, it is necessary to select the proper volume plume and/or aperture size out of the discrete continuum of Paschen curves. In selecting this volume, and as can be best seen from Figure 2, the plume of activated species 231 is made up of a plurality of substantially concentric, substantially spherical pressure isobars, such as 231 a -231 c . It must be appreciated that the pressure of the energy transferring gas introduced into the enclosure is substantially equalized with the background pressure over a given radial distance from the point of introduction at the mouth of the aperture 226. For instance, the inner spherical isobar nay represent a pressure drop of 1,33 kPa (10 Torr), the annular isobar defined between that spherical isobar and the outer granular isobar 231 c may also represent another pressure drop of 1,33 kPa (10 Torr) and so on until the pressure differential is equalized. Of course, when the pressure differential becomes sufficiently small, the plume boundary is defined and the density of activated species melds into the background density of activated species. After evacuating the enclosure, applying the electromagnetic field of microwave energy by means of the radiant microwave applicator and introducing a sufficient flow of the energy transferring gas (which, in conjunction with the background pressure in the enclosure and the power of the electromagnetic field), ignite a plasma of activated species from the high density of the energy transferring gas residing within the activation region; activated species of the energy transferring gas travel towards the collision region 65 illustrated in Figure 1. The activated species of the energy transferring gas are in fact driven towards the collision region due to the high flow rate of the energy transferring gas exiting from the first conduit. The velocity which the flow rate imparts to the energy transferring gas is, at least initially, transonic, and in any case, must be of at least the same magnitude as the thermal velocity of said activated species. In other words, if the directional momentum imparted to the energy transferring gas is not substantially the same as or greater than the thermal velocity, the directional momentum will be lost in the low background pressure which exists in the enclosure. It is to be recalled that the location of the collision region is defined by a second conduit having at least one aperture disposed at the distal end thereof, which distal end of the conduit extends into the interior of the vacuumized enclosure and terminates in close proximity to the substrate. The function of the second conduit is to deliver the precursor deposition/etchant gas into the collision region so that the activated species of the energy transferring gas may interact with the precursor gas to yield an energized deposition/etchant species. Preferred precursor deposition gases delivered to the collision region include, but are not limited to, silicon containing gases, germanium containing gases, carbon containing gases and combinations thereof. Preferred etchant gases include NF₃, CF₄, fluorocarbons, chlorocarbons, and combinations thereof. The precursor deposition/etchant gas is typically delivered into the collision region at a flow rate of at least about 10 SCCM and preferably between about 10 and 200 SCCM, with a preferred flow rate of between about 25 and 100 SCCM, and a most preferred flow rate of approximately 40 SCCM. In the collision region, activated species of the energy transferring gas (i.e., helium) interact with the precursor deposition species (i.e., silane) in the following manner: He* + SiH₄ -----→ SiH * / 3 + H + He The resulting SiH * / 3 and H then migrate from the collision region and are deposited upon the exposed surface of the substrate, which substrate is located a distance from the collision region that is within the length of the mean free path of the energized deposition species. The mean free path of the energized deposition species is the distance that the energized deposition (or etchant) species may travel without colliding with either other deposition determined, and the deposition rate is selected, each of the other parameters critical in initiating a plume of a given volume of activated species of the energy transferring gas are likewise determined. As was discussed hereinabove, as a rule of thumb, the flow rate of the energy transferring gas through the first conduit must be sufficient to create a pressure differential of at least about a factor of five between the energy transferring gas and the background pressure of the vacuumized enclosure for the uniform deposition of energized deposition species onto a substrate having a surface area of about 100 cm². Thus, knowing the required length of the mean free path, the background pressure may be selected, and this background pressure dictates the possible range of flow rates at which the energy transferring gas must be introduced into the enclosure in order to maintain a significant pressure differential between the background pressure and the flow within the first conduit. This also determines the size aperture which will provide transonic flow at that flow rate of energy transferring gas. Taking the usable range of flow rates of the energy transferring gas for a given background pressure, it then becomes possible to return to the Paschen curve illustrated in Figure 4 to determine an optimized power/pressure regime in which to operate for a given volume of activated species. At a given power/pressure/aperture size regime, it is possible to determine the approximate percentage of the energy transferring gas which has been excited to form the activated species, (the typical range is 1-5% of, for example, He being promoted to the He* activated species). Knowing this percentage allows the operator to regulate the flow rate of the precursor deposition/etchant gas into the collision region, thereby maximizing the ratio of He* to precursor gas molecules to avoid the possibility of multiple collisions between the energized deposition species and the precursor deposition/etchant gas. In order to place the importance of the instant invention in true perspective, the instant inventors, utilizing the principles disclosed herein, have (1) deposited high quality amorphous silicon alloy material at rates of as high as 45 nm/S (two orders of magnitude higher than r.f. PECVD processes and a factor of five higher than microwave PECVD processes); (2) have deposited silicon alloy material exhibiting 4-5 orders of magnitude of photoconductivity; and have deposited silicon alloy material characterized by a density of defect states of about 10¹⁶ defects/cm⁻³/eV. The inventors believe that the quality of the material will continue to improve as improvements, such as improvements geared to reduce the amount of sputtered waveguide or graphite material, are implemented. For instance, the cut-away portion of the microwave applicator has now been nickel plated to reduce the presence of copper in the deposited film. Improved film quality should result. Prior to completing this discussion, it must once again be noted that the "critical" pressure differential which must be maintained, as well as the "critical" deposition rate made possible through the use of the method described herein have been rather arbitrarily selected. Since the pressure differential is dependent on such parameters as background pressure, size of the substrate, size of the aperture in the first conduit, amount of power supplied, gases utilized, etc., no universal value can be calculated. The value of "about a factor of five" has been selected and used in the claims because it is sufficiently great to constitute a substantially universal truth. However, the instant inventors adamantly state their intention to be bound only by the broader principles espoused herein and not by such specific numerical values. It should be recognized that the foregoing description and discussion are merely meant to illustrate the principles of the present invention and not meant to be a limitation upon the practice thereof. It is the following claims, including all equivalents, which are meant to define the true scope of the present invention.

Claims: Method of fabricating high quality thin films at a relatively high rate of deposition, including the steps of: providing an enclosure (12); maintaining the interior of said enclosure (12) at a subatmospheric background pressure; introducing an energy transferring gas (A) into the interior of said enclosure (12) through at least one aperture (26; 226; 326) formed in a first conduit (24; 224; 324); activating said energy transferring gas (A) in an activation region (36) so as to form a high density plume (34; 231; 331) of activated species from said energy transferring gas (A); introducing a precursor deposition gas into the interior of said enclosure (12) through a second conduit (60); the point of introduction (62) of said precursor deposition gas from said second conduit (60) into said enclosure (12) being spacedly disposed relative to said activation region, whereby collisions of said high density of activated species with said precursor deposition gas define a collision region (65) in which a high density of energized deposition species of said precursor deposition gas are generated; operatively disposing substrate means (50) interiorly of said enclosure so that said substrate means (50) are spacedly positioned from said activation region (36) a distance sufficient to substantially prevent electron damage; characterized in that a choke condition is created adjacent the aperture (26; 226; 326) in said first conduit (24; 224; 324) so as to provide a localized high pressure of energy transferring gas (A) flowing therethrough, whereby a substantial pressure is maintained differential between the pressure adjacent the aperture (26; 226; 326) in said first conduit (24; 224; 324) and the background pressure in said enclosure (12). Method as claimed in claim 1, in which the flow rate of energy transferring gas (A) in said first conduit (24; 224; 324) is selected so as to provide a sufficient pressure of said energy transferring gas (A) adjacent said aperture (26; 226; 326) for initiating a plasma from said energy transferring gas (A) at a power-pressure-aperture size regime which is at the substantial minimum of the Paschen curve (1, 2, 3, 4). Method as claimed in claim 1, in which the time of residency of electrons adjacent said aperture (26; 226; 326) is increased, whereby the density of said activated species adjacent said apertures (26; 226; 326) is also increased. Method as claimed in claim 3, in which a magnetic field is provided to increase the time of residency of said electrons adjacent said aperture (26; 226; 326). Method as claimed in any of the preceding claims, in which said first conduit (24; 224; 324) is cooled. Method as claimed in one of the preceding claims, in which said energy transferring gas (A) is selected from the group consisting essentially of hydrogen, the noble gases, CH₄ and combinations thereof. Method as claimed in one of the preceding claims, in which said precursor deposition gas is selected from the group consisting essentially of a silicon-containing gas, a carbon-containing gas, a germanium-containing gas and combinations thereof. Method as claimed in one of the preceding claims, in which the background pressure in said enclosure (12) is maintained at least a factor of five less than the pressure adjacent the apertures (26; 226; 326) in said first conduit (24; 224; 226), whereby a plume of pressure isobars (231a, 231b; 231c; 331a; 331b; 331c) is formed by the activated species of said energy transferring gas (A). Method as claimed in one of the preceding claims, in which the volume of said activated species plume is controlled by controlling the pressure differential between the background pressure and the pressure adjacent the aperture (26; 226; 326) in said first conduit (24; 224; 226). Method as claimed in claim 2, in which pressure isobars are maintained of about one-half the pressure at which the substantial minimum of the Paschen curve for a given energy transferring gas (A) occurs adjacent the aperture portion of said first conduit (24; 224; 324). Method as claimed in one of the preceding claims, in which a velocity is imparted to said activated species which is initially substantially transonic. Method as claimed in one of the preceding claims, in which said background pressure is maintained in the range of between 0,013 Pa (0,01 mT) and 1,33 Pa (10 mT). Method as claimed in any of the preceding claims, in which the pressure of the energy proximate the aperture (26; 226; 326) of said first conduit (24; 224, 324) is maintained between 1,33 kPa (10 T) and 4 kPa (30 T). Method is claimed in one of the preceding claims, in which said aperture (26; 226; 326) of said first conduit (24; 224; 324) is dimensioned to have a diameter between 0,25 and 3 cm. Method as claimed in one of the preceding claims, in which a microwave energy at a frequency of 2,45 GHz is used for producing said plasma. Method as claimed in one of the preceding claims, in which the power level is kept at at least 40 V/cm. Method as claimed in one of the preceding claims, in which said precursor gas in delivered into the collision region at a flow rate of between 10 and 200 SCCM. Method as claimed in one of the preceding claims, in which said energy transferring gas (A) is delivered by said first conduit (24; 224; 324) at a flow rate of between 100 and 2000 SCCM.

Inventors: DOEHLER JOACHIM, DOTTER II BUDDY, HUDGENS STEPHEN, KRISKO ANNETTE, KRISKO JEFFREY, OVSHINSKY STANFORD, PEEDIN LESTER, DOEHLER, JOACHIM, DOTTER II, BUDDY, HUDGENS, STEPHEN, KRISKO, ANNETTE, KRISKO, JEFFREY, OVSHINSKY, STANFORD, PEEDIN, LESTER
Applicants: ENERGY CONVERSION DEVICES INC, ENERGY CONVERSION DEVICES, INC.
Application year: 1989
Main classification: C23C16
IPC codes: C23C16, H01L21