PASSIVATION LAYERS FOR HIGH TEMPERATURE SUPERCONDUCTORS

Abstract: The present invention provides a method of depositing passivation layers on the surface of a superconducting ceramic oxide comprising employing the techniques of activated chemical vapor deposition and molecular beam deposition to apply a layer of an oxide of Al, Bi, Si or Al-W, or a layer of CaF2 to the surface.

Description: PASSIVATION LAYERS FOR HIGH TEMPERATURE SUPERCONDUCTORS Background of the Invention Superconductors are materials which can conduct electricity with virtually no resistance when they are maintained at a certain temperature, referred to as the superconductive transition temperature (Tc). For example, pure metals or alloys such as niobium-tin (Nb 3 Sn) reach the superconductive state when they are cooled below 23 . That degree of cooling requires the use of liquid helium, which condenses at 4 K. Liquid helium is expensive and is difficult to manipulate. A major breakthrough in the commercial development of this technology came in January of 1987, when a yttrium-barium copper oxide ceramic, reported to be y 1>2 Ba 0-8 Cu0 4 , was prepared which achieved superconductivity at a Tc of about 90 K. See M. K. u et al., Phys. Rev. Lett♦ . 58, 908 (1987). This degree of cooling can be readily accomplished with liquid nitrogen (boiling point, bp, 77 K or -196°C), which is much less expensive and easier to handle than is liquid helium (bp 4.2 K) . The advent of liquid nitrogen-cooled superconductors could be a boon to utilities, industry, electronics, transportation and medicine. For example, power companies envision superconductive transmission lines, buried underground, that would carry current with no dissipative losses or generation of heat. Superconducting devices could lead to smaller, more powerful supercomputers. Because these chips'produce no waste heat, they could be packed closer together, allowing the size of electronic boxes to be reduced. This size reduction means that signals would take less time to travel between switching devices and circuit elements, leading to smaller, faster computers. Since the discovery of high temperature super¬ conductivity in the 2-1-4 oxides (of the form La2_χSr x Cuθ43, the 1-2-3 oxides (of the form YBa2Cu3θ7_ x ), the 2-1-2-2 oxides of Bi and Tl (of the form Bi2Caι +x Sr2_χCU2θB + y or Tl2Caι + χBa2_χCu2θβ+y), and the 2-2-2-3 oxides of Bi and Tl (of the form Bi 2 Ca2+χSr2_χCu ;5 0 1 o+y or Tl 2 Ca2+χBa2>χCu 3 Oιo+y) it has been apparent that the incorporation of these materials into existing and new technologies will require the solution of a large number of materials-related problems. Analogous problems can be anticipated for ail such CuO-based superconductors, including systems presently in the early stages of development. First, there are issues related to materials synthesis so that structures can be fabricated with predetermined shapes, sizes and current-carrying abi¬ lity. These range from macroscopic to microscopic. Second, there are challenges, related to the fabrication of superconducting thin films on a variety of sub- strates, with Si being an obvious choice from the perspective of microelectronic devices. Third, there are issues related to the formation of stable ohmic contacts, particularly for small samples and thin films. Fourth, there are problems related to the pass- ivation, protection or encapsulation of small struc¬ tures such as fibers or thin films, so that the super¬ conducting oxides can be used under a wide range of environments. Early work has shown that the surfaces of these high-Tc ceramics are highly reactive. In par¬ ticular, adato s which are reactive with respect to oxide formation cause disruption of the 2-1-4, 1-2-3, and 2-1-2-2 surfaces by withdrawing oxygen from the lattice to form undesirable oxide overlayers with thicknesses that are probably kinetically limited. In a broad sense, passivation layers act to prevent mole¬ cular motion across the layer, providing a stabilizing environment which protects the surface of the supercon¬ ductor from the ambient atmosphere. More specifically, the passivation layers can serve as barriers against loss of oxygen from the superconductor, can isolate one device from another, can act as components in the semi¬ conductor structure, or can provide electrical isola¬ tion of multilevel conductive systems. H. M. Meyer et al. , in Appl. Phys. Lett., 51, 1118 (October 1987) reported that evaporated gold films can passivate Laτ_.85Sro.1 CUO4 superconductor surfaces against chemical attack. In an attempt to coat super- thin films with dielectric films, Y. Ichikawa et al., in 3. Apol. Phvs., 27, L381 (1988) used rf-magnetron sputtering to deposit N 2θ5 films and AI2O3 films on films of the Y-Ba-Cu-0 superconductive ceramic dis¬ closed by M. K. u et al., cited hereinabove. The thickness of the dielectric films was reported to be from 600-1350A. However, these layers deleteriously modified the crystal structure of the Y-Ba-Cu-0 films, leading to a broadened superconducting transition zone and a lowered Tc. This group also reported Ba atom diffusion into the dielectric layer, indicating sub¬ stantial disruption of the ceramic ' lattice. Therefore, a need exists for methods to apply stable, effective passivation layers to superconductive ceramic oxides which do not disrupt the useful proper¬ ties of the superconductor. Summary of the Invention The present invention provides a method to apply a passivation layer to the surface of a supercon¬ ductive ceramic oxide. The method comprises evaporat- ing aluminum (Al), bismuth (Bi), silicon (Si) or both aluminum and tungsten (Al-W) in an atmosphere of ther¬ mally or chemically activated oxygen (0*) so that a dielectric layer of an oxide of Al, Bi, Si or Al-W is applied to said surface. This technique can be referred to as "activated chemical vapor deposition." The present invention also comprises applying a passi¬ vation layer of CaF2 to the surface of a superconduc¬ tive ceramic oxide by molecular beam deposition of CaF 2 thereon, which deposition does not require the use of activated oxygen. The passivation layers applied are dielectric, as opposed to conductive pure metal layers ■ employed to form ohmic contacts. The present oxide or fluoride passivating layers do not substantially dis¬ rupt the ceramic lattice of the superconductor, and therefore can limit the degradation of its electrical or physical properties. Although the present method is exemplified primarily by the deposition of thin (about 12-100A) layers to facilitate study of interface-overlayer interactions, layers of any appropriate thickness can be applied. Perferably, the present passivation layers are at least about 50A in thickness, most preferably about looft to 5,000-10,000^ in thickness. The present method can be employed to apply a passivation layer to the surface of any of the known superconductive ceramic oxides. The structures of several of some preferred classes . of these materials is summarized in Table I, below. Other copperoxide-based superconductive ceramic oxides which can be used as substrates in the present method are described herein- below. Table I -Superconductive Ceramic Oxides Formula 6 Abbreviation La 2 _χAχCuθ4 2-1-4 1 '* RBa2Cu 0 7-x 1-2-3 2 * 5 Bi2Caj.+χSr2_ x Cu2θ 8+ y 2-1-2-2 3 Bi 2 Ca2+χSr2_χCu 3 0 1 o+y 2-2-2-3 Tl2Caτ. + χBa2-χCu2θβ + y 2-1-2-2 Tl2Ca2+χBa2-χCu 3 0 10+v 2-2-2-3 1 3. G. Bednorz et al., Z. Phys. B., 64, 189 (1986), (A=Sr). z C. W. Chu et al., Phys. Rev. Lett., _5__ > 405 (1987), (R=Y). 3 H. Maeda et al., Jpn. 3. Appl. Phys., 27, L209 (1988)} 2. Z. Sheng et al., Nature, 332, 55 (1988). * A=Ba, Sr, Ca. 5 R=lanthanide element, e.g.^ Y, Sm, Eu, Gd, Dy, Ho, Yb. 6 X and y are stoichiometric values required to satisfy the chemical valence states necessary for superconductivity. The present invention is also directed to a shaped body of a superconductive ceramic oxide, such as a wire, a microelectronic device, film or the like, having at least one surface thereof coated with a passivation layer of (a) an oxide of Al, Bi, Si or Al-W or (b) CaF . As used herein with respect to the present oxide or fluoride layers, the term "passivation" is intended to encompass the protection and/or encapsula¬ tion of superconductive structures such as fibers or thin films, as well as their electrical isolation. Therefore, the present invention also comprises a shaped body of a superconductive- ceramic oxide having at least one surface coated with a passivation layer of (a) an oxide of Al, Bi, Si or Al-W, or (b) CaF 2 . Brief Description of the Figures Figure 1 is a graphical depiction of the Cu 2p 3 /2 core level emission for a 1-2-3 superconductor surface treated in accord with the present method. Figure 2 is a graphical depiction of the Cu 2P3/2 core level emission for a 1-2-3 superconductor surface treated in accord with the present method. Figure 3 is a graphical depiction of the 0 Is core level emission for a 1-2-3 superconductor treated in accord with the present method. Figure 4 is a graphical depiction of the Cu 2p 3 /2 core level emission for a 1-2-3 superconductor treated with Al or Al in thermally or chemically acti¬ vated oxygen (0*). Detailed Description of the Invention Ceramic Superconductors Superconducting oxides were first reported in 1964, but until recently, the intermetallic compounds showed higher superconducting temperatures. In 1975, research scientists at E. I. DuPont de Nemours dis¬ covered superconductivity in the system BaPbι_ x Bi x 0 3 with a Tc of 13 K (A. W. Sleight et al., Solid State Commun. , 17, 299 (1975)). The structure for the super- conducting composition in this system is only slightly distorted from the ideal cubic perovskite structure. It is generally accepted that a disproportionation of the Bi(IV) occurs, namely, 2Bi(IV)(όs -Bidll)(6s 2 ) + Bi(V)(6s°) at approximately 30 percent Bi. Sleight et al. found that the best superconductors were single phase prepared by quenching from a rather restricted single-phase region, and hence these phases are actually metastable materials. At equilibrium condi¬ tions, two phases with different " values of x would exist; the phase with a lower value of x would be metallic and with a higher value of x would be a semi¬ conductor. It is important to keep in mind that the actual assignment of formal valence states is a conven¬ ient way of electron accounting; the actual states include appreciable admixing of anion functions. Recently, for example, Cava and Batlogg, Nature, 332, 814 (1988), have shown that Ban..6 K 0.4 Bi0 3 9 ave a Tc of almost 30 K, which is considerably higher than the 13 K reported for BaPbg 75BiQ.2 O5. La2Cuθ was reported by Longo and Raccah, 3. Solid State Che ., , 526 (1973), to show an orthorhom- bic distortion of the K2 iF4 structure with a = 5.363A, b = 5.409A and c = 13.17&. It was also reported that La2Cuθ4 has a variable concentration of anion vacancies and may be represented as La2Cuθ4_ x . Superconductivity has been reported for some preparations of La2Cuθ4« See D. C. Johnston et al., Phys. Rev. B, 36, 4007 (1987). However, there appears to be some question as to the stoichio etry of these products since only a small portion of the material seems to exhibit super¬ conductivity (P. M. Grant et al., Phys. Rev. Letters, .58, 2487 (1987)). The La2- A x Cuθ ceramics (A = Ca, Sr, Ba), exhibit a Tc of about 40 K. The substitution of the alkaline earth cation for the rare earth depresses the tetragonal-to-orthorhombic transition temperature. The transition disappears completely at x > 0.2, which is about the composition for which superconductivity is no longer observed. The compound YBa2Cu 3 θ7_ x shows a superconduct¬ ing transition of about 93 K and crystallizes as a defect perovskite. The unit cell of YBa2Cu 3 07_ x is orthorhombic (Pmmm) with a = 3.8198(1)A, b = 3.8849(1)A and c = 11.6762(3)A. The structure may be considered as an oxygen-deficient perovskite with tripled unit cells due to Ba-Y ordering along the c-axis. For " YBa2Cu 3 07_ x , the oxygens occupy 7/9 of the anion sites. One-third of the copper is in four-fold coordination and two-thirds are five-fold coordinated. A reversible structural transformation occurs with changing oxygen stoic iometry going from orthorhombic at x = 7.0 to tetragonal at x = 6.0 (see P. K. Gallagher et al., Mat. Res. Bull., 22, 995 (1987)). The value x = 7.0 is achieved by annealing in oxygen at 400-500°C, and this composition shows the sharpest superconducting transi¬ tion. Recently, Maeda et al., cited above, reported that a superconductive transition temperature of 120 K was obtained for Bi 2 CaSr2Cu 2 0 8 . ι n mos t 0 f the studies reported to date on the Bi/Ca/Sr/Cu/O system, measure¬ ments were made on single crystals selected from multi¬ phase products. The group at DuPont selected platy crystals having a composition Bi2Sr 3 _ x Ca x Cu2θβ + 0 * 9 > x > 0.4) which showed a Tc of about 95 K. Crystals of Bi 2 Sr 3 _ x Ca x Cu2θ8+y for x = 0.5 gave orthorhombic cell constants a = 5.399, b = 5.414, c = 30.904 (M. A. Subra anian et al., Science, 239, 1015 (1988)). The structure consists of pairs of Cuθ2 sheets interleaved by Ca(Sr), alternating with double bismuth-oxide layers. There are now three groups of superconducting oxides which contain the mixed Cu(II)-Cu(III) oxidation states, namely La2_ x A x Cuθ4 where A = Ba, Sr or Caj RBa2Cu 3 θ7_ x where R is almost any lanthanidej and Bi2Sr _ x Cai_ x Cu20g + y. Z. Z. Sheng and A. M. Herman, Nature, 332, 55 (1988) have recently reported on a high-temperature superconducting phase in the system Tl/Ba/Ca/Cu/O. Two phases were identified by R. M. Hazen et al., namely Tl2CaBa2Cu2θ9 and Tl2Ba2Ca2Cu 3 0j_n. A. W. Sleight et al. have also reported on the struc¬ ture of Tl2Ba2CaCu2θ8 as well as Tl2Ba2Cu0g. In addi¬ tion, superconductor Tl2Ba2Ca2Cu 3 0]_o has been prepared by the DuPont group and shows the highest Tc of any known bulk superconductor, namely, 125 K. A series of oxides with high Tc values has now been studied for the type (A III 0)2A2 Ca n -lCu n θ2+2n» where A(III) is Bi or Tl, A(II) is Ba or Sr, and n is the number of Cu-0 sheets stacked. To date, n = 3 is the maximum number of stacked Cu-0 sheets examined con¬ secutively. There appears to be a general trend whereby Tc increases as n increases. Preparation The present method can be used for the passi¬ vation of superconductive materials, regardless of the method of their preparation. Superconductive ceramic oxides are generally prepared by heating an intimate mixture of the oxide or carbonate powders of the solid elements at temperatures between 900°C and 1100°C. After regrinding and reheating, the mixture is pressed into pellets and sintered (bonded without melting) at high temperatures for several hours. The pellets are then annealed at a lower temperature, optimally 400°C to 450°C. The conditions under which the ceramic is pre¬ pared affect its oxygen content. This is important because structural studies have shown that the number and arrangement of oxygen atoms in the lattice is important to the oxide's superconductive properties. In fact, to produce the highest superconducting transi¬ tion temperatures, the ceramic is preferably heated in an atmosphere of pure oxygen. The ceramic should then be cooled slowly for about 5-6 hours in a furnace. Characterization of Superconductor Surfaces and the Overlayer-Substrate Interface Electron spectroscopy was used to identify occupied and unoccupied electronic states of the super- conductors Laι.85 Sr 0.15 Cu0 4 > Y a2Cu 3 θ7„ x , Bi2Caι+ x Sr2_ x Cu2θ8 + y» and related cuprate compounds. Results from polycrystalline and single crystalline materials reveal that the valence band emission for the 2-1-4, 1-2-3, 2-1-2-2 and 2-2-2-3 superconductors are remarkably similar, with a low density of states near Ef, a central feature at about 3.4 eV, and shoulders at 2.1 and 5.4 eV that are derived primarily from Cu-0 hybrid states. Comparison with calculated densities of the states shows the importance of correlation effects. Structure in the empty states can be related to La 5d, La 4f, Ba 5d, Ba 4f, Y 4d, Ca 3d, Sr 4d, Bi 5p and 0 2p empty states. Core level results show the Cu 2p 3 /2 main line and satellite structure associated with for¬ mal Cu2 + configuration. The 0 Is emission reveals ine- quivalent .chemical environments. Interface studies can show substrate disruption, contact formation, and passivation, depending on the overlayer. Ag and Au overlayers have a minimal effect (inert contacts) while the deposition of oxygen-scavanging atoms (Ti, Fe, Cu, Pd, La, Al, In, Bi and Ge) results in oxygen removal and surface disruption. The invention will be further described by reference to the following detailed example wherein x- ray photoelectron spectroscopy (XPS) measurements of the interface formation were " performed under standard ultrahigh vacuum conditions (pressure during measure¬ ment less than 1 x 10- 10 Torr). See S. A. Chambers et al;, Phvs. Rev. B, 34, 634 (1987). A monochromatic beam of Al K α photons (hv=l486.6- eV) was focused on the sample surface and the energy of the emitted electrons was measured with a Surface Science Instruments hemi¬ spherical analyzer using a resistive anode position- sensitive detector. The photoelectrons were collected at an angle of 60° relative to the surface normal and the cone of acceptance of the analyzer was 30°. The x- ray beam diameter was 300 μm at the sample and the pass energy of the analyzer was 50 eV. The Cu 2p 3 /2 emission from pure Cu was used to calibrate the binding energy scale (binding energy of 932.5 eV). Data were acquired and analyzed on a dedicated HP9836C computer. For each of the interfaces studied, the XPS energy dis¬ tribution curves (EDCs) were measured for the valence bands and the Cu 2p and 0 Is core levels, as well as Y 3d, Ba 3d, Bi 4f, Ca 2p, and Sr 3d core levels, as appropriate. Core level binding energy shifts and the attenuation of the substrate core level emission as a function of overlayer thickness were used to identify reacting species and overlayer growth morphology. YBa2Cu 3 07_ x was obtained from Argonne National Laboratory, IL. Clean surfaces of the various sub¬ strate materials for these tests were prepared by frac¬ turing the samples iji situ, which exposed uncontamin- ated internal surfaces. Prior to deposition of any material, the clean surfaces were thoroughly charac- terized to allow comparison of the initial surfaces and those which had been coated with a particular over¬ layer. Deposition of oxides on the superconductors was performed by evaporating the parent material (e.g., Bi, Al or Si) in an ambient atmosphere of activated oxygen. Bi and Si were evaporated from resistively- heated Ta boats, and Al was evaporated from a resistively-heated W basket. Before any deposition, the evaporators were thoroughly degassed (pressure in the chamber was less than 2 x 10- 10 Torr during evapor¬ ation, prior to introducing 02), an d the evaporation rates were stabilized at a rate of about 1 A/minute at the sample. The source-to-sample distance was about 30 cm, and the evaporation rate was measured with an Inficon quartz crystal thickness monitor. High-purity O2 from a stainless steel gas mainfold could be intro¬ duced to the chamber via a leak-valve, and the pressure monitored with an ionization gauge. Composition of the gases in the chamber was determined with a quadupole mass spectrometer. The partial pressure of O2 in the deposition chamber was 1.0 x 10 -6 Torr, and the partial pressure of the residual gases (predominantly CO and H2O) was less than 1 x 10 -9 Torr. Between the evapora¬ tor and the sample was a thorium oxide-coated iridium filament which was electrically isolated from the chamber walls. Passing current through this filament and electrically biasing it negatively relative to the chamber provided a source of energetic electrons to dissociate O2 molecules and ionize 0 atoms. This acti¬ vation process had the effect of increasing their chemical reactivity. Passivation layers were obtained using the following process. First, the sample was cleaved and positioned facing away from the evaporator. Second, a previously degassed boat containing the desired parent metal or CaF2 was heated to the evaporation temperature and the rate of evaporation stabilized. Oxygen was then leaked into the chamber to the desired pressure. (The addition of O2 did not affect the evaporation rates, and other experiments have shown that evapora- tion of these materials in a ' non-activated O2 ambient did not produce any significant oxide formation on the substrate, except that produced by reaction with oxygen atoms from the substrate. It is these reactions with the substrate which the activated deposition process inhibits. ) Once the O2 pressure in the chamber was stabilized, the filament was heated and biased to -250 V to establish a 50 mA emission current between filament and ground. Mass spectroscopy of the gases present at this point showed 0 atoms and O2 molecules in equal proportions (partial pressure = 5 x 10 -7 Torr) and doubly ionized 0 (0- 2 ) present at roughly lϋ% of the total pressure (partial pressure = 1 x 10- 7 Torr). The sample was then turned to face the evaporator to deposit a particular thickness of oxide. After each deposition, XPS spectra were taken to determine changes on the surface. The Cu 2p 3 /2 lineshape was used as an indicator of reaction and to evaluate the emission ratio of the satellite to the main line. The 0 Is lineshape was used to qualitatively confirm deposition of oxide layers. Vapor deposition of CaF2 was done in the same system, without the addition of oxygen. Solid CaF2 was evaporated from tungsten boats, and was deposited on the substrate surface. EXAMPLE. DEPOSITION OF DIELECTRIC LAYERS ON YBa2Cu 3 07_ x A. Deposition of Bi-0 and CaF2 A direct measure of the chemical reactivity and modification of the superconductor surface region can be gained by following the behavior of the Cu 2p /2 core level emission feature using x-ray photoemission. The bottom-most curve of Figure 1 ' shows the Cu 2p 3 /2 lineshape for the clean surface of a freshly fractured sample of YBa2Cu 3 07_ x . This complex lineshape, which is observed for the 1-2-3 materials as well as the 2-1-4 and 2-1-2-2 superconductors, indicates that the Cu valence is nominally 2+. We -have found that any modification of the superconductor by reactive metal deposition or Ar ion bombardment leads to the loss of the doublet features at higher binding energy, termed the "satellite. " The loss of this feature indicates a valence change to Cu 1+ , structural modification of the lattice, and the loss of superconductivity. The top-most spectrum of Figure 1 shows that the deposition of only 2.5A of a reactive metal, Cu, leads to the almost complete loss of satellite doublet (satellite-to-ma ' inline-intensity ratio reduced from 0.34 for the clean surface to 0.04). Such effects are typical for reactive metals, and to date, Ti, Fe, Cu, Pd, La, Al and In have been examined, together with the semiconductors Ge and Si. The results indicate that the Cu valence has changed within a distance of at least 50-60A of the surface and that a nonsuperconduct- ing, insulating layer is formed, i.e., a poor electri¬ cal contact. Moreover, the amount of deterioration will be enhanced by thermal processing. The only metal which leads to no change in the satellite-to-mainline- intensity ratio is Au. The deposition of adatoms of Au leads to a metallic overlayer that does not adversely effect the substrate. The deposition of 10A of CaF 2 also leaves the substrate completely intact with no evidence of disruptive interactions. Moreover, CaF 2 appears to cover the surface uniformly, as judged by the exponential attenuation of the substrate emission. In contrast to the other ovεrlayers discussed herein- above, CaF2 is a large bandgap insulator with a high static dielectric constant and it is useful as an insu- lating layer in device fabrication. As part .of these passivation studies, the deposition of metals in an. activated-oxygen environment at 1 x 10~ e Torr partial pressures of oxygen was exa¬ mined. In this way, it was possible to provide activ- ated oxygen from the gas phase to form metal oxide precursors that would not react with oxygen from the superconductor. In Figure 1, the results for Bi deposited onto YBa2Cu 3 07_ x both with and without activated oxygen are compared. While not as reactive as Cu metal, an 8A layer of Bi leads to disruption/reaction on YBa2Cu 3 θ7_ x as discussed above. In contrast, the Cu 2p lineshape did not change following the deposition of όA of Bi in activated oxygen, indicating that the Bi-0 overlayer did not significantly modify the superconductor surface. B. Deposition of Siθ2 and Al-W Oxides Figures 2 and 3 summarize the results obtained for the deposition of Siθ2 and Al-W oxide layers by the activated chemical vapor deposition of Si and Al. In Figure 3, the 0 Is spectrum for the uncoated ("clean") substrate exhibits a wide asymmetric main peak, indi¬ cating the presence of more than one chemical environ¬ ment. It is made up of a dominant component at about 529 eV, derived from Cu-0 planes, and a shallower com¬ ponent, attributed to Cu-0 chains. The deposition of Al from a tungsten basket in an activated oxygen atmos¬ phere (filament bias was 250 eV; filament emission was 50 mA; O2 pressure = lxl0~5 Torr) resulted in the depo- sition of an overlayer that is believed to comprise an about lil ratio of aluminum:tungsten oxides. The non- disruptive nature of these dielectric oxide overiayers is confirmed' by the persistent emission from the Cu 2p 3 /2 satellite structure at about 942 eV binding energy in Figure 2. Figure 3 shows the corresponding 0]_ s core level emission, which demonstrates that new oxygen bonding configurations are.observed following deposition. C. Deposition of Al2θ 3 Evaporation was done from a coiled W basket in an ambient pressure of 1 x 10 -6 Torr O2. The emission current from the thoria-coated filament was 30 A, and the biasing voltage was -250 V. Apparently, the lower pressure and activation current in this test did not create detectable amounts of the volatile W oxide on the basket. Figure 4 demonstrates the Cu 2p /2 peak for the deposition of 16A pure Al (dot-dash-line) and for 16A Al + activated O2 (solid line). The integrated intensity of the satellite emission for the pure Al case was 12% of the main peak intensity, compared to 22% for the activated deposition. The main peak for the activated deposition is also broader than for the pure Al deposition, although the total integrated intensity was the same. Both of these results imply that the deposition of pure Al converts more Cu within the probe depth from the 2+ oxidation state of the superconductor to the 1+ state, characteristic of the disrupted superconductor, and removes more oxygen from the superconductor. These results verify that the deposition of aluminum oxide reacted less with the substrate and withdrew less oxygen from the ' supercon- ductor than pure Al. No W was detected on the surface after this test. The invention has been described with refer¬ ence to various specific and preferred embodiments and techniques. However, it should be understood that many variations and modifications " can be made while remain¬ ing within the spirit and scope of the invention.

Claims: WHAT IS CLAIMED IS; 1. A method comprising evaporating Al, Bi, Si or Al-W in an atmosphere of activated oxygen in the pre¬ sence of a superconductive ceramic oxide surface so that a passivation layer of an oxide of Al, Bi, Si or Al-W is applied to said surface. 2. A method comprising applying a passivation layer of CaF 2 to the surface of a superconductive ceramic oxide by chemical vapor deposition. 3. The method of claim 1 wherein said oxide passiva¬ tion layer is applied to the surface of a 2-1-4 superconductive ceramic oxide. 4. The method of claim 2 wherein said CaF2 passivation layer is applied to the surface of a 2-1-4 super¬ conductive ceramic oxide. 5. The method of claim 1 wherein said oxide passiva¬ tion layer is applied to the surface of a 1-2-3 superconductive ceramic oxide comprising Y. 6. The method of claim 2 wherein said CaF2 passivation layer is applied to the surface of a 1-2-3 super¬ conductive ceramic oxide comprising Y. 7. The method of claim 1 wherein said oxide passiva¬ tion layer is applied to the surface of a 2-1-2-2 superconductive ceramic oxide comprising Bi. 8. The method of claim 2 wherein said CaF2 passiva¬ tion layer is applied to the surface of a 2-2-2-3 superconductive ceramic oxide comprising Bi. 9. The method of claim 1 wherein said oxide passiva¬ tion layer is applied to the surface of a 2-1-2-2 superconductive ceramic oxide comprising Tl. 10. The method of claim 2 wherein said CaF2 passivation layer is applied to the surface of a 2-2-2-3 super¬ conductive ceramic oxide comprising Tl. 11. The method of claim 1 wherein said oxide passiva¬ tion layer is applied to the surface of a supercon¬ ductive ceramic oxide of the formula RBa2Cu 3 θ7_χ, wherein R is a lanthenide element. 12. The method of claim 2 wherein said CaF2 passiva¬ tion layer is applied to the surface of a supercon¬ ductive ceramic oxide of the formula RBa2Cu 3 07_ x , wherein R is a lanthenide element. 13. The method of claims 1 or 2 wherein the layer is at least about 50A in thickness. 14. The method of claims 1 or 2 wherein the layer is about 50-10,000A in thickness. 15. A shaped body of a superconductive ceramic oxide having at least one surface thereof coated with a passivation layer of (a) an oxide of Al, Bi, Si or Al-W, or (b) CaF 2 . 16. A shaped body of a superconductive ceramic oxide having at least one surface thereof coated with a passivation layer, which is applied to said surface by the method of claims 1 or 2.

Inventors: GRASSELLI ROBERT K, HILL DONALD M, MEYER HARRY M III, NELSON DAVID L, WEAVER JOHN H, GRASSELLI, ROBERT, K., HILL, DONALD, M., MEYER, HARRY, M., III, NELSON, DAVID, L., WEAVER, JOHN, H.
Applicants: UNIV MINNESOTA, REGENTS OF THE UNIVERSITY OF MINNESOTA
Application year: 1989
Main classification: B32B9
IPC codes: B32B9, C01G1, C04B41, C23C14, H01B12, H01L39