Magneto-optical memory element

Abstract: In a magneto-optical memory element having a multi-­ layer construction comprising in the order from a side of incidence of light a first transparent dielectric film (4), a rare earth transition metal alloy film (5), a second transparent dielectric film (6) and a reflective film (7), an improvement being present in that, where circular dichroism effect of a magnetic material is used for reading information, said rare earth transition metal alloy film has a refractive index represented by n ± Δn wherein n = 3.2 - 3.55i and Δn = 0.05 - 0.03i and has a film thickness of 18 to 46 nm, and said second transparent dielectric film has a refractive index of 2.0 ± 0.2 and a film thickness of 80 to 108 nm.

Description: The present invention relates to a magneto-optical memory element of which writing, reading and erasing of information are performed by the irradiation of a laser beam. Magneto-optical memory elements have been actively studied as light memory elements capable of recording, reading and erasing information. Particularly, the elements which employ a rare earth transition metal alloy film as a memory medium are very noticeable, because the memory bits are not affected by grain boundary and the memory medium film can be made large. In a magneto-optical recording and reading apparatus, polarized light is applied on the magneto-optical memory element and the light which is reflected thereon and subjected to the rotation of reflected polarized plane by magneto-optical effects, such as Kerr effect and Faraday effect, is detected to read information. Fig. 6 schematically shows the magnetic-optical recording and reading apparatus and Fig. 7 is a drawing explaining functional principle. In Fig. 6, 20 shows a semiconductor laser which generates linear polarized light, 21 shows a collimator lens, 22 a polarizer, 23 a half mirror and 24 an objective lens. An analyzer 25 changes the polarized direction of the reflected light to light intensity. The number 26 is a photodiode which detects the output of the light intensity from the analyzer 25. The light generated from the semiconductor laser 20 is preliminary changed through the collimator lens 21 to parallel light and then changed through the polarizer 22 to a first linear polarized light having a polarizing direction of a in Fig. 7. The first linear polarized light a is converged through the half mirror 23 and the objective lens 24 on a recording medium 28 formed on a transparent substrate 27. The first linear light a is reflected to form reflected light b or b' by the function of the magneto-optical effects (e.g. Kerr effect) and the reflected light has a polarizing direction (Kerr rotation angle of  k or  k ,) which correspond with the information of "0" or "1" recorded on the recording medium 28 in the form of a magnetizing direction. For example, b corresponds to a bit information of "0" (up magnetizing direction) and b' corresponds to a bit information of "1" (down magnetizing direction). The reflected light is passed through the objective lens 23 and is reflected on the half mirror 23 toward the analyzer 25. If the analyzer 25 is placed in the direction c of Fig. 7. It detects the light intensity d and d' which are corresponding to the polarizing direction of the reflected light b and b'. Then, the photodiode 26 receives the reflected light b or b' which has an intensity of d or d' through the analyzer 25 and the information is read out as an electric signal corresponding to the intensity d or d' with a signal processing circuit (not shown in the Drawings) connected to the photodiode 26. As is apparent from the above mentioned explanation, in order to enhance the quality of readout signals, the photo-magnetic recording and reading apparatus in which reading of information is conducted by the Kerr effect of the magneto-optical memory element is required to have an increased Kerr rotation angle. However, when the magneto-optical memory element comprises a rare earth transition metal alloy film as a memory medium, the Kerr rotation angle is small and insufficient to enhance the quality of readout signals. In order to obviate the above mentioned problems, Japanese Kokai Publication (unexamined) proposes a magneto-optical memory element which adopts a multi-layer construction. Fig. 8 shows a partial sectional view of the magneto-optical memory element of this construction. In Fig. 8, 30 indicates a transparent substrate of glass, polycarbonate, epoxy resin and the like and 31 shows a first transparent dielectric film which has a higher refractive index than the transparent substrate 30. The number 32 is a rare earth transition metal alloy film, 33 is a second transparent dielectric film and 34 is a metal reflective film. In this construction, the rare earth transition metal alloy film is so thin that the light which reaches on the alloy film partially passes through therein. This construction uses the Faraday effect which takes place by passing the light through the rare earth transition metal alloy film 32, reflecting on the metal reflective film 34 and again passing through the alloy film 32, in addition to the Kerr effect which takes place by reflecting the light on the alloy film 32. Accordingly, the Kerr rotation angle appears to be increased several times, in comparison with the magneto-optical memory element only employing the Kerr effect. For example, in Fig. 8, where the transparent substrate 30 is glass, the first transparent dielectric film 31 is AIN, the rare earth transition metal alloy film 32 is GdTbFe, the second transparent dielectric film 33 is AIN and the metal reflective film is Al, the Kerr rotation angle appears to be increased to 1.6 °. On the other hand, the element which only employs the Kerr effect has the Kerr rotation angle of about 0.3 to 0.4. This construction, however, has the following defects. (1) An optical element which has improved extinction ratio and is expensive, such as Glan-Thompson prism should be employed as an analyzer. (2) Optical assemblies increase in number to prevent cost down and to make larger in size. EP-A-0 161 807 which is reflected in the preamble of claim 1 describes a magnetooptical memory element having a multilayer construction comprising in the order from a side of incidence of light first transparent dielectric film, a rare earth transition metal alloy film, a second transparent dielectric film and a reflective film, said rare earth transition metal alloy is made of GdTbFe and has a thickness of about 27 m. The second transparent dielectric layer is an AIN film having a thickness of about 35 nm. US-A-4 561 032 discloses a magnetiooptic reproducing device wherein a light beam polarized in a predetermined direction is incident on a magnetic recording medium and signals recorded on the recording medium are optically read by the utilization of the magnetooptic effect, a polarization component of the signal light from the recording medium in a direction perpendicular to a polarization component in the predetermined direction is relatively increased as compared with the latter component, thereby enhancing the utilization efficiency of the signal light in detection and enabling detection of great S/N ratio or observation of a recorded pattern of high visibility. The present invention provides a magneto-optical memory element in accordance with claim 1 with the multi-layer construction which approximately has a maximum value in the ellipticity of reflected light against incident light by the aid of circular dichroism effect of a magnetic material and the interference effect of light. The element can simplify the optical system of the magneto-optical recording and reading apparatus. The present invention concerns a magneto-optical memory element having a multi-layer construction comprising in the order from a side of incidence of light a first transparent dielectric film (31), a rare earth transition metal alloy film (32), a second transparent dielectric film (33) and a reflective film (34), said rare earth transition metal alloy film (32) has a refractive index represented by n + Δn wherein n = 3.2 - 3.55i and Δn = 0.05 - 0.03i and has a film thickness of 18 to 46 nm, and said second transparent dielectric film (33) has a refractive index of 2.0 + 0.2, which is characterized in that the film (33) has a film thickness of 80 to 108 nm. Further embodiments can be found in claims 2 and 3 with respect to a magneto-optical recording and a reading device and a method for reading information from said magneto-optical recording medium. Fig. 1 is a drawing which explains circular dichroism effect. Fig. 2 shows a longitudinal section of the magneto-optical memory element of the present invention. Fig. 3 shows the change of ellipticity, Kerr rotation angle and reflectivity. Fig. 4 shematically shows an optical reading apparatus used in the measurement of the degree of modulation of the magneto-optical memory element of the present invention. Fig. 5 shows the change of reflectivity, signai intensity and degree of modulation. Fig. 6 shematically shows a conventional photo-magnetic recording and reading apparatus. Fig. 7 is a drawing explaining the functional principle of the apparatus of Fig. 6. Fig. 8 shows a partial sectional view of the magneto-optical memory element of a multi-layer construction. The element of the present invention employs the circular dichroism effect of a magnetic material, i.e. a property that the reflectance of the magnetic material to circularly polarized light is different by the direction of magnetization of the magnetic material. Circular dichroism effect is firstly explained by Fig. 1. In Fig. 1, 1 shows a magnetic film and the arrows of 2(a) and 2 (b) indicate the direction of magnetization. The light A is incident light, such as laser light etc. and B is the reflected light from the film 1. Circular dichroism effect of the magnetic material is a phenomena in which the reflective index to circularly polarized light is varied according to polarized direction and corresponds to the direction of magnetization. In Fig. 1, if the amplitude reflective index to right circularly polarized light at the portion of up directional magnetization as shown by 2 (a) is r⁺ and the ampiitude reflective index to left circularly polarized light is r⁻, assuming that incident light is right circularly polarized light, the amplitude reflective index at 2(a) is r⁺ and at 2(b) is r⁻. The difference of the reflective index r⁺ and r⁻, produces the difference of the intensity of light B which is reflected on the magnetic film 1, and provides the informations corresponding to the direction of magnetization. The degree of modulation (m) of the reflective signal is represented m = r + 2 - r - 2 r + 2 + r - 2 Apparently, the larger the difference of the amplitude reflective index, the better the signal quality. In view of the ellipticity (e) of reflected light which is defined e = r + - r - r + + r - the larger the ellipticity of reflected light, the better the quality of the readout signal. In the present invention, a multi-layer construction of the magneto-optical memory element is employed to enhance the ellipticity. Fig. 2 shows a longitudinal section of the magnetooptical memory element of the present invention. In Fig.2, 3 shows a transparent substrate of glass, polycarbonate, acryl resin, epoxy resin and the like, 4 shows a first transparent dielectric film, 5 shows a rare earth metaltransition metal alloy film, 6 shows a second transparent dielectric film and 7 shows a reflective film. In this construction, the ellipticity can increase by changing the thickness of each layer, as mentioned in the introduction of the invention. Fig. 3 shows the change of ellipticity, Kerr rotation angle and reflectivity index, when the transparent substrate 3 is glass, the first transparent dielectric film 4 is an AIN film of 80 nm thickness, the rare earth transition metal alloy film 5 is a GdTbFe film of 20 nm thickness, the metal reflective film 7 is an Al film of 50 nm thickness and the second dielectric film 6 of AIN is changed from 0 to 200 nm in thickness. The change is obtained from calculation. It is apparent from Fig.3 that the ellipticity approaches to a maximum value of about 4 when the thickness of the second transparent dielectric film 6 is approximately 90 nm. If the film 6 is not present, the ellipticity is about 0.14. The degree of modulation of the magneto-optical memory element with the above mentioned construction is measured and the result is explained hereinafter. Fig. 4 schematically shows an optical reading apparatus used in the measurement. In Fig. 4, 8 shows a semiconductor laser, 9 a half mirror, 10 a 1/4 wavelength plate which changes linear polarized light emitted from the semiconductor laser to circularly polarized light, 12 an objective lens and 13 a detector of light density. This apparatus is the same as an apparatus already used for compact disks. An element indicated by 14 is a magneto-optical memory element which contains information and which has the thickness and construction as mentioned above. The degree of modulation of the readout signal from this apparatus is about 0.08 which nearly equals to the degree of modulation of 0.07 for conventionally available apparatus. As mentioned above, the magneto-optical memory element of the present invention does not employ an analyzer and generates readout signal having good quality for an optical system of a compact disk. The change of degree of modulation, reflectivity and signal intensity is calculated by varying the refractive index and thickness of each layer. Fig. 5 is one example of this measurement, which shows the change of reflectivity, signal intensity and degree of modulation when the thickness of the rare earth transition metal alloy film 5 of GdTbFe is changed from 20 to 40 nm and the thickness of the first transparent dielectric film 4 of AIN is changed from 80 to 120 nm. In this case, the second transparent dielectric film 6 of AIN has a thickness of 120 nm and the metal reflective film 7 of Al is 50 nm. As is apparent from Fig.5, the signal intensity has a peak at 30 nm thickness. The reflectivity decreases as the thickness of GdTbFe film decreases, and the degree of modulation decreases as the thickness of GdTbFe film increases. In the practice of the present invention, the reflectivity has a minimum value in view of servo characteristics in the optical system and the degree of modulation also has a minimum value in view of signal quality. Accordingly, suitable thickness of each layer and reflectivity are found by calculation such that the reflectivity is more than 0.05 and the degree of modulation is more than 0.05. In this calculation, the refractive index of the transparent substrate is fixed to n=1.5, the optical path of the first transparent dielectric film is fixed to 160 nm and the refractive index of the metal reflective film is fixed to Al of n=2-7i and 50 nm thickness. The optical path is determined from the fact that the ellipticity has a maximum value at approximately 160 nm, the metal reflective film is determined from the fact that Al has a high absolute reflectivity and the thickness of the film is selected to 50 nm so that the transparent component is less than 0.02. The refractive index of the rare earth transition metal alloy film, when expressed alloy film, when expressed n ± Δn, is fixed to n = 3.2 - 3.55i and Δn = 0.05 - 0.03i. Then, where the thickness of the alloy film is d₁, the refractive index of the second dielectric film is n₂ and the thickness thereof is d₂, calculation is carried out by using these 3 parameters. The conditions are listed in Table 1. Transparent substrate (glass or plastics) n=1.5 First transparent dielectric film Optical path 160 nm Rare earth-transition metal film n=3.2-3.55i Δn=0.05-0.03i Thickness d₂ Second transparent dielectric film n₂, d₂ Reflective film n=2-7i, d=50nm The results of the calculation are shown in Tables 2 to 6. As is apparent from the result of n=2.0 of Fig.4 or Fig.6, the reflectivity gradually increases and the degree of modulation gradually decreases, as the thickness of the rare earth transition metal alloy film increases. The thickness d₁ of the alloy film, therefore, is determined and then the thickness d₂ of the second dielectric film is also determined. If the reflectivity is more than 0.05 and the degree of modulation is more than 0.05, the thickness d₁ is 18 to 46 nm and the refractive index n₂ is 2.0 ± 0.2 and d₂ 80 to 108 nm. According to the present invention, reading of information can be done without an analyzer, thus minimizing expense and miniaturizing the apparatus. The magneto-optical element is applicable to already existing apparatus for compact disks.

Claims: A magneto-optical memory element having a multi-layer construction comprising in the order from a side of incidence of light a first transparent dielectric film (31), a rare earth transition metal alloy film (32), a second transparent dielectric film (33) and a reflective film (34), said rare earth transition metal alloy film (32) has a refractive index represented by n ± Δn wherein n = 3.2 - 3.55i and Δn = 0.05 - 0.03i and has a film thickness of 18 to 46 nm, and said second transparent dielectric film (33) has a refractive index of 2.0 ± 0.2 characterized in that the film (33) has a film thickness of 80 to 108 nm. Magneto-optical recording and reading device comprising a semiconductor laser (8) generating linear polarized light, within the light beam of the laser (8) in the following sequence a half mirror (9), a 1/4 wave length plate (10), a collimator lens (11), an objective lens (12) and a magneto-optical memory element according to claim 1 an within the light beam of the reflected light a light density detector. Method for reading information from a magneto-optical memory element according to claim 1 characterized in using the circular dichroism effect of said rare earth transition metal alloy film (32).

Inventors: KATAYAMA HIROYUKI, MURAKAMI YOSHITERU, NAKAYAMA JUNICHIRO, OHTA KENJI, TAKAHASHI AKIRA, VAN KAZUO, KATAYAMA, HIROYUKI, MURAKAMI, YOSHITERU, NAKAYAMA, JUNICHIRO, OHTA, KENJI, TAKAHASHI, AKIRA, VAN, KAZUO
Applicants: SHARP KK, SHARP KABUSHIKI KAISHA
Application year: 1989
Main classification: G11B7
IPC codes: G11B11