An active matrix substrate

Abstract: An active matrix substrate has pixel electrodes (2) arranged in a matrix form on an insulating substrate, scanning lines (3) disposed between the rows of the pixel electrodes arrayed in one direction, signal lines (4) disposed intersecting the scanning lines, first switching devices (5) each disposed adjacent to one side of each of the pixel electrodes, and second switching devices (6) each disposed adjacent to a different side thereof from the side adjacent to which the first switching devices each are disposed, only the first switching devices (5) out of the first and second switching devices being each electrically connected to the adjacent pixel electrode (2), thereby attaining pixel defect correction with ease.

Description: The present invention relates to an active matrix substrate which contains switching devices such as thin film transistors (hereinafter abbreviated as "TFTs") which is used in combination with a display medium such as liquid crystal to construct a matrix display unit. In recent years, active matrix substrates which comprise numerous pixel electrodes and switching devices arranged in a matrix form on insulating substrates have been employed in display units that use liquid crystals or the like. Fig. 7 shows a conventional active matrix substrate in a model form. TFTs 85 that function as switching devices are arranged in a matrix form on an insulating substrate 81 formed of glass or the like. The TFTs 85 are connected to gate bus lines 83 and also to source bus lines 84 disposed intersecting the gate bus lines 83 . The gate bus lines 83 function as scanning lines, the source bus lines 84 as signal lines. Connected to the TFTs 85 are pixel electrodes 82 formed, for example of, ITO (indium tin oxide). The TFTs 85 are switched on or off by electrical signals transmitted to the gate bus lines 83 . The driving of the pixel electrodes 82 is controlled by the on/off action of the TFTs 85 . To construct a display unit, a substance such as liquid crystal having light transmittance varying with the magnitude of an applied electrical field is sandwiched between the above-mentioned matrix substrate and a second insulating substrate which is also formed of glass or similar material. Voltage applied between the pixel electrodes 82 and counter electrodes disposed on the second insulating substrate and facing the pixel electrodes causes the light transmittance of the liquid crystal to change for the production of the display. With the recent trend toward higher resolution of the display, pixel electrodes disposed on active matrix substrates are becoming even smaller in size and greater in number; in fact, a very large number of pixel electrodes are used to construct an active matrix substrate. With the increase in the number of pixel electrodes used, the number of failures resulting from broken bus lines, malfunctioning of TFTs, etc., has also been increasing. Such failures are serious problems as they result in pixel defects. To solve such problems, an active matrix substrate has been developed having a construction allowing for defect correction (see Fig. 5). The active matrix substrate shown in Fig. 5 is provided with two TFTs 75 and 76 that are formed on a gate bus line 73 . The TFT 75 is electrically connected to a pixel electrode 72 via its drain electrode. The TFT 76 formed closer to a source bus line 74 serves as a spare TFT, and its drain electrode is not electrically connected to the pixel electrode 72 . If any fault occurs to the TFT 75 connected to the pixel electrode 72 , a source bus branch line 74a is cut off along a dotted line A using a laser beam or the like to electrically disconnect the TFT 75 from the source bus line 74 . Next, the drain electrode of the spare TFT 76 is electrically connected to the pixel electrode 72 by a photo-assisted CVD (photo-assisted chemical vapor deposition) technique using a laser beam. The pixel electrode 72 will thus be driven using the spare TFT 76 . The above-mentioned defect correction method is effective only when the spare TFT 76 functions properly even if the TFT 75 originally connected to the pixel electrode 72 is defective. However, if the fault of the TFT 75 is attributable to entrapment of foreign matter, etc., due to improper resist coating, the parts adjacent to the defective TFT 75 are, in many cases, also defective, being affected by the same cause. Also, during the cutting process by the laser beam or during the connecting process by the photo-assisted CVD technique, the parts that do not need processing can be damaged or contaminated because of insufficient accuracy of the equipment used. This means that it is very likely that the spare TFT 76 will also become defective when the TFT 75 is defective. Therefore, with the active matrix substrate of Fig. 5, it has not been possible to sufficiently ensure defect correction in the case of the defective TFT 75 and other failures. Furthermore, if the source bus branch line 74a is broken, as shown by a dotted line B in Fig. 5, between the source bus line 74 and the TFT 76, both the TFTs 75 and 76 will become disconnected from the driving source, and therefore, the pixel electrode 72 will become unable to be driven. To solve the aforementioned problems such as TFT failure, another type of active matrix substrate as shown in Fig. 6 has also been proposed. This active matrix substrate comprises gate bus lines 93 and source bus lines 94 arranged in a grid-like form, and a pair of pixel electrodes 91 and 96 are disposed inside each of the regions surrounded by the gate bus lines 93 and source bus lines 94 , the pair of pixel electrodes 91 and 96 dividing the region into approximately two equal parts, for example, in the extending direction of the gate bus line 93 . The pixel electrodes 91 and 96 , respectively, are connected to the respective drain electrodes of two TFTs 92 and 97 disposed in a mutually parallel array on the gate bus line 93 . The TFTs 92 and 97 are positioned between a source bus branch line 94a and one of the pixel electrodes 91 and 96 , respectively. The source bus branch line 94a branches from the source bus line 94 and extends adjacent to and in parallel with the gate bus line 93 . The TFTs 92 and 97 are respectively connected to the tip and base portions of the source bus branch line 94a via their source electrodes. The TFTs 92 and 97 , respectively, use portions of the gate bus line 93 disposed in parallel with the source bus branch line 94a as their respective gate electrodes. A data signal transmitted through the source bus line 94 and a scanning signal transmitted through the gate bus line 93 are input to drive the pair of TFTs 92 and 97 disposed in a mutually parallel array along the source bus branch line 94a . Therefore, the data and scanning signals are input equally to the pair of TFTs 92 and 97 , and therefore, voltage is equally applied to the pair of pixel electrodes 91 and 96 in the region surrounded by the gate bus line 93 and the source bus line 94 . As a result, the paired pixel electrodes 91 and 96 function as if they are one pixel electrode, giving the active matrix substrate the display performance equal to that of the conventional active matrix substrate shown in Fig. 7 that has one pixel electrode in each one region surrounded by the bus lines. Furthermore, if any one of the TFT 92 or 97 , respectively connected to the pixel electrodes 91 and 96 , is defective; or if the source bus branch line 94a is broken, as shown by a dotted line C in Fig. 6, between the TFTs 92 and 97 , either of the TFT 92 that is not defective or the TFT 97 that is electrically connected to the source bus line 94 works to apply voltage to the pixel electrode 91 or 96 whichever connected to the properly functioning TFT. In the active matrix substrate shown in Fig. 7, any of such defectives has resulted in a defect affecting the pixel having the size approximately equal to that of each one region surrounded by the bus lines. On the other hand, in the active matrix substrate shown in Fig. 6, failure is only caused to the pixel having the size approximately half that of each one region surrounded by the bus lines. Since the pixel failure of the size approximately half that of each one region mentioned above is hardly discernible, the display performance of the active matrix substrate is markedly improved. However, in the above active matrix substrate, if the source bus branch line 94a extending from the source bus line 94 is broken, as shown by a dotted line D in Fig. 6, between the TFT 97 connected to the base portion thereof and the source bus line 94, both the TFTs 92 and 97 connected to the source bus branch line 94a will become disconnected from the driving source, resulting in pixel failure over an area approximately equal to the area of each region surrounded by the bus lines. If such a break is caused in the source bus branch line 94a , the effect of disposing divided pixel electrodes in each region surrounded by the bus lines will become nullified. In the above active matrix substrate, numerous gate bus lines are disposed intersecting numerous source bus lines in a mutually insulating manner. One bus line is disposed above the other bus line to intersect. The bus line positioned above the other at the intersecting point is usually susceptible to breakage. The breakage of such a bus line will appear as a streak on a display screen. Because such a streak greatly impairs the picture quality, development of an active matrix substrate allowing for correction of bus line breakage is hoped for. Fig. 9 of EP-A-0276853 discloses an arrangement in which each cell element includes two display electrodes and four thin film transistors. In addition, an interconnection is provided between each pair of display electrodes. Also disclosed herein is an active matrix substrate comprising pixel electrodes arranged in a matrix form on an insulating substrate, scanning lines disposed between the rows of the pixel electrodes arrayed in one direction, signal lines disposed intersecting said scanning lines, first switching devices each disposed adjacent to one side of each of said pixel electrodes, and second switching devices each disposed adjacent to a different side thereof from said side adjacent to which said first switching devices each are disposed, only the first switching devices out of the first and second switching devices being electrically connected each to the adjacent pixel electrode. In one arrangement, either one of the first or the second switching devices is formed on the scanning line and is electrically connected to a branch line extending from the signal line and in parallel with said scanning line, while the other one is formed on a branch line extending from said scanning line and in parallel with said signal line and is electrically connected to said signal line. In one arrangement, the first switch ing device is formed on the scanning line and is connected to a branch line which extends from the signal line and in parallel with said scanning line, while the second switching device is electrically connected both to said signal line and to one end of a branch line which extends from said scanning line and which is disposed in parallel with and beneath said signal line, the other end of said branch line from said scanning line extending sidewardly from beneath said signal line and being disposed adjacent to said scanning line in a mutually insulating manner. The active matrix substrate of the present invention is as claimed in claim 1. In a preferred embodiment, the respective ends of said spare line are disposed in close proximity to the respective sides of the intersecting portion of the scanning or signal line which intersects said line having a pair of branch lines and extends adjacent to and in parallel with the other line. Thus, the invention described herein makes possible the objectives of (1) providing an active matrix substrate that ensures pixel defect correction if pixel defect occurs because of a defective switching device or a broken bus branch line; (2) providing an active matrix substrate that minimizes the area of pixel defect if pixel defect occurs because of a defective switching device or a broken bus branch line; and (3) providing an active matrix substrate allowing for correction of a broken bus line if the bus line is broken at its intersecting portion. By way of example only, a specific embodiment of the present invention will now be described, with reference to the accompanying drawings, in which:- Fig. 1 is a plan view showing the main part of an active matrix substrate, but which does not form part of the present invention. Fig. 2 is a plan view showing the main part of another active matrix substrate, but which does not form part of the present invention. Fig. 3 is a plan view showing the main part of an active matrix substrate of the present invention. Fig. 4a is a diagram showing a defect correction process by which a defect that has occurred on the active matrix substrate of Fig. 3. Figs. 4b and 4c, respectively, are diagrams showing other defect correction processes by which defects that have occurred on the active matrix substrate of Fig. 3. Fig. 5 is a diagram showing a defect correction process by which a defect that has occurred on a conventional active matrix substrate. Fig. 6 is a diagram showing another defect correction process by which a defect that has occurred on a conventional active matrix substrate. Fig. 7 is a schematic diagram showing a conventional active matrix substrate. Example 1 Fig. 1 is a plan view showing the main part of one arrangement not forming part of the present invention. There are pixel electrodes 2 disposed in a matrix form on a glass substrate. Disposed between the rows of the pixel electrodes 2 arrayed in the horizontal direction in Fig. 1 are gate bus lines 3. On the other hand, source bus lines 4 are disposed between the rows of the pixel electrodes 2 arrayed in the vertical direction. In this embodiment, TFTs 5 are disposed on the gate bus lines 3, while spare TFTs 6 are disposed on gate bus branch lines 3a extending in parallel with the source bus lines 4 . The source electrode of each of the TFTs 5 is electrically connected to a source bus branch line 4a extending in parallel with the adjacent gate bus line 3, while the drain electrode thereof is electrically connected to the corresponding pixel electrode 2. In this embodiment, the pixel electrode 2 is driven by the TFT 5 when the TFT 5 properly functions. The source electrode of the corresponding spare TFT 6 is electrically connected to the source bus line 4 , but its drain electrode is not electrically connected to the pixel electrode 2 . However, the drain electrode of the TFT 6 is disposed in close proximity to the pixel electrode 2 . Therefore, the drain electrode of the TFT 6 can be easily connected to the pixel electrode 2 electrically, using a photo-assisted CVD and other technique. As described above, the TFT 6 and the TFT 5 are respectively disposed in close proximity to different sides of the same pixel electrode 2 , providing sufficient space between the TFT 6 and the TFT 5 . This arrangement reduces the possibility of the spare TFT 6 becoming defective because of the same cause when the TFT 5 is defective. It is therefore apparent that the above arrangement provides surer defect correction in the case of TFT 5 failure than the arrangement in which two TFTs 50 and 51 are disposed close to each other such as those shown in Fig. 3. Next, is the description dealing with the outline of the method for the manufacture of the active matrix substrate of this arrangement. Gate bus lines 3 are formed on a glass substrate using, for example, tantalum. In addition to the main lines, gate bus branch lines 3a are also formed on which spare TFTs 6 are to be formed. Next, a gate insulating film and a semiconductor layer are deposited on the gate bus lines 3 and their branch lines 3a , which are then subjected to a patterning process to form the channels of TFTs 5 and 6 . The gate insulating film is formed, for example, of silicon nitride (hereinafter referred to as "SiNx"), and the semiconductor layer is formed, for example, of intrinsic amorphous silicon (hereinafter referred to as "a-Si(i)"). After that, source bus lines 4 (including the source electrodes of the TFTs 6 ), source bus branch lines 4a (including the source electrodes of the TFTs 5 ), and the drain electrodes of the TFTs 5 and 6 are formed, for example, of titanium. Also, pixel electrodes 2 are formed, for example, of ITO. Furthermore, insulating materials 7 such as silicon nitride are deposited between the source bus lines 4 and the gate bus lines 3 where they intersect each other to prevent leakage between the adjacent source bus and gate bus lines. The following describes how the defect correction is carried out. When the TFT 5 is defective in its characteristics and is unable to properly drive the pixel electrode 2 , a laser beam with an adjusted beam diameter is projected to cut off the source bus branch line 4a along the dotted line A , disconnecting the electrical connection between the defective TFT 5 and the source bus line 4 . Next, the glass substrate is placed in an atmosphere of a gas containing a suitable metallic element (e.g., W(CO)₆ containing tungsten), and a laser beam of a suitable kind is projected to the space between the spare TFT 6 and the pixel electrode 2 to deposit the metal at the point where the laser beam is projected by making use of the photo-assisted CVD phenomenon. The spare TFT 6 is thus electrically connected to the pixel electrode 2 , which enables the pixel electrode 2 to be driven by the spare TFT 6 . In the case of a break caused in the source bus branch line 4a to which the source electrode of the TFT 5 is connected, the spare TFT 6 is electrically connected to the pixel electrode 2 using the laser beam in the same manner as mentioned above to correct the defect. Virtually the same effect as the above example can be obtained if the reverse construction to that of the above example is employed, i.e., the drain electrode of the TFT 6 is electrically connected to the pixel electrode 2 while the drain electrode of the TFT 5 is not electrically connected to the pixel electrode 2 . In the above arrangement, the two switching devices are respectively disposed in close proximity to different sides of the same pixel electrode, providing sufficient space between them as compared with the case in which the switching devices are disposed in close proximity to the same side of the pixel electrode. Therefore, if the switching device originally connected electrically to the pixel electrode becomes defective for any reason, there is little possibility that the other switching device not electrically connected to the pixel electrode will also become defective. Furthermore, the above arrangement reduces the possibility of damaging the other switching device when disconnecting the defective switching device. In the construction of the above example, one of the two switching devices is formed on the scanning line and is electrically connected to the signal branch line disposed parallel to the scanning line, while the other switching device is formed on the scanning branch line disposed parallel to the signal line and is electrically connected to the signal line. With this arrangement, if a defect is caused due to breakage of one of the two branch lines, there will be no simultaneous disconnection of both the switching devices from the signal line, and it is therefore possible to correct the defect. On the above active matrix substrate, there are disposed pixel electrode areas through which light is transmitted and pixel electrode areas through which no light is transmitted. The ratio of the light transmitting areas to the entire area of the active matrix substrate is known as the aperture ratio. If the aperture ratio decreases, the display screen will darken and therefore, is not desirable. Because of the provision of the gate bus branch lines 3a for connection between the gate electrodes of the spare TFTs 6 and the gate bus lines 3 , the active matrix substrate of this embodiment has a smaller aperture ratio than the active matrix substrate not provided with spare TFTs 6 , and therefore has a disadvantage of a darker display screen. Example 2 Fig. 2 is a plan view showing the main part of another arrangement which is not part of the present invention wherein the aperture ratio does not drop, despite the provision of spare TFTs. There are pixel electrodes 12 disposed in a matrix form on a glass substrate, each of the pixel electrodes 12 being provided with a TFT 15 for driving the pixel electrode 12 . A gate bus line 13 is provided extending beneath the drain and source electrodes of the TFT 15 connected to the pixel electrode 12 , a portion of the gate bus line 13 serving as the gate electrode of the TFT 15 . The source electrode of the TFT 15 is connected to a source bus branch line 14a branching from the source bus line 14 that intersects the gate bus line 13 and extending parallel to the gate bus line 13 . Also, in this arrangement, a spare TFT 16 is provided to each of the pixel electrodes 12 . The drain electrode of the spare TFT 16 is not connected to the pixel electrode 12 but disposed in close proximity thereto for facilitation of later connection by means of a photo-assisted CVD or other technique. The source electrode of the spare TFT 16 is connected to the source bus line 14 , the gate electrode thereof being provided beneath the drain and source electrodes. In this embodiment, a gate bus branch line 13a extending from the gate electrode of the spare TFT 16 toward the gate bus line 13 is disposed beneath the source bus line 14 with an insulating film interposed therebetween. The gate bus branch line 13a extends parallel to the source bus line 14 superposed thereon toward the gate bus line 13 . With this arrangement, it is possible to provide the gate bus branch line 13a without reducing the area of the pixel electrode 12. The end portion of the gate bus branch line 13a extends sidewardly from beneath the source bus line 14 toward a connection point 17 with the gate bus line 13 , the end portion being not connected to the gate bus line 13 but positioned in close proximity to a protrusion formed on the gate bus line 13 for later connection thereto by means of a laser-assisted CVD, etc. In this arrangement, the pixel electrode 12 is formed, for example, of ITO. The gate bus line 13 , the gate bus branch line 13a , and the gate electrode of the TFT 15 are formed, for example, of tantalum. The source bus line 14 , the source bus branch line 14a , and the source electrodes of the TFTs 15 and 16 are formed, for example, of titanium. The insulating film interposed between the gate bus branch line 13a and the source bus line 14 is formed, for example, of SiNx, a-Si(i), etc., the insulating film not being disposed on the connection point 17 so as to provide electrical connection at the time of later defect correction. Also, an insulating material such as SiNx, a-Si(i), a-Si(n⁺), etc., is interposed between the gate bus line 13 and the source bus line 14 where they intersect each other to prevent leakage between these adjacent lines. In the active matrix substrate of this arrangement, when the TFT 15 is defective, the pixel is recovered from the defect in the following manner. First, the source bus branch line 14a extending from the source bus line 14 is cut off by means of a laser beam to disconnect the electrical connection between the defective TFT 15 and the source bus line 14 . Then, using a laser beam-assisted CVD or other technique, electrical connections are provided between the drain electrode of the spare TFT 16 and the pixel electrode 12 and between the gate bus line 13 and the gate bus branch line 13a at the connection point 17 . Thus, the defective TFT 15 is disconnected, and the spare TFT 16 is put into use to drive the pixel electrode 12 . Furthermore, in this embodiment, defect correction is performed in the same manner as above in the case of a defect caused by breakage of the source bus branch line 14a . In this arrangement, as described above, the scanning branch line to which the spare switching device adjacent to the pixel electrode is connected is disposed beneath the signal line, the scanning branch line and the scanning line being positioned in close proximity to each other for facilitation of later connection. Thus, the pixel defect correction function is provided with ease and without decreasing the aperture ratio. Example 3 Fig. 3 shows an embodiment of the active matrix substrate of the present invention, wherein a plurality of gate bus lines 20 parallel to each other and formed, for example, of tantalum, are disposed with a suitable space provided between each other on a light transmission insulating substrate. Also on the insulating substrate, parallel source bus lines 30 formed, for example, of titanium, are arranged with a suitable space provided between each other. Material such as SiNx is interposed between the gate bus lines 20 and the source bus lines 30 where they intersect each other to provide insulation between the two adjacent lines and thereby prevent electrical leakage. In each pixel region on the insulating substrate surrounded by a pair of facing gate bus lines 20 and a pair of facing source bus lines 30 , a pair of pixel electrodes 40 and 41 are disposed, for example, one on top of the other in the extending direction of the source bus lines 30 . The pixel electrodes 40 and 41 are formed, for example, of ITO, and have cut-off corners that correspond to the corners of the pixel region surrounded by the bus lines 20 and 30 . Each gate bus line 20 disposed between a pair of pixel regions adjacent to each other in the extending direction of the source bus lines 30 is provided with a pair of gate bus branch lines 21 and 22 respectively extending into the adjacent pixel regions. The gate bus branch lines 21 and 22 extend adjacent to, and in parallel with, one of the facing source bus lines 30 that define the pixel regions into which the respective branch lines 21 and 22 extend, the branch lines 21 and 22 extending into the cut-off portions of the pixel electrodes 40 and 41 . TFTs 50 and 51 are disposed on the gate bus branch lines 21 and 22 , the TFTs 50 and 51 being electrically connected to the source bus line 30 as well as to the pixel electrodes 40 and 41 , respectively. The TFTs 50 and 51 are electrically connected to the source bus line 30 via their source electrodes, while their gate electrodes are electrically connected to the gate bus line 20 through the respective gate bus branch lines 21 and 22 . Also, the drain electrodes of the TFTs 50 and 51 are electrically connected to the pixel electrodes 40 and 41 , respectively. A scanning signal is input to each gate bus line 20 , a data signal to each source bus line 30 . The TFTs 50 and 51 to which both signals are input are driven to apply voltage to the pixel electrodes 40 and 41 connected to the TFTs 50 and 51 , respectively. Disposed above the gate bus line 20 formed between the pair of adjacent pixel regions is a spare line 60 formed, for example, of titanium. The spare line 60 is positioned at a portion of the gate bus line 20 opposite to the portion thereof where the gate bus branch lines 21 and 22 are positioned. The spare line 60 spans the gate bus line 20 so that its respective ends extend into the adjacent pixel regions. Between the spare line 60 and the gate bus line 20 , an insulating film is inserted for electrical insulation between them. Each extreme end of the spare line 60 projects toward the adjacent source bus line 30 , but not in contact therewith. The active matrix substrate of the above construction is manufactured in the following manner. first, gate bus lines 20 are formed on an insulating substrate using tantalum. Then, layers of SiNx and a-Si(i) are successively formed, and then subjected to a patterning process to form TFTs 50 and 51 using a known method. At the time of the patterning, the SiNx film is left unremoved from the portions between the gate bus lines 20 and the source bus lines 30 where they intersect each other to prevent electrical leakage. Thereafter, the source bus lines 30 and spare lines 60 are formed using titanium, and then, pixel electrodes 40 and 41 are formed using ITO to complete the construction of the active matrix substrate of this embodiment. In the above active matrix substrate, the scanning signal is input to the gate bus line 20 , the data signal to the source bus line 30 . The TFTs 50 and 51 to which both signals are input are driven to apply voltage to the pixel electrodes 40 and 41 connected to the TFTs 50 and 51 , respectively. The scanning signal fed to the gate bus line 20 formed between the pair of pixel regions adjacent to each other in the extending directions of the facing source bus lines 30 is input to the pair of gate bus branch lines 21 and 22 that extend from the gate bus line 20 into the respective pixel regions. Since the TFTs 50 and 51 connected to the respective gate bus lines 21 and 22 are connected to the same source bus line 30 , the TFTs 50 and 51 are driven by the same scanning and data signals. In the above active matrix substrate, if one of the TFT 50 or 51 , respectively connected to the pair of pixel electrodes 40 and 41 adjacent to each other across the gate bus line 20 , fails to be driven by the given driving signals because of the breakage at the base of either of the gate bus branch line 21 or 22 as shown by a dotted line A or B in Fig. 3, the other TFT will be driven by the given driving signals. This means that a break caused in one of the gate bus line 21 or 22 does not result in the simultaneous disconnection from the driving source of both of the pixel electrodes 40 and 41 facing each other across the gate bus line 20 . The same is also true of the case in which failure is caused to either one of the TFTs 50 and 51 opposite each other across the gate bus line 20 . Also, it is possible that the gate bus line 20 itself is broken, for example, as shown by a dotted line C in Fig. 3. In this case, the gate bus line 20 is split into two parts separated by the dotted line C , and all the TFTs 50 and 51 disposed in pairs across the gate bus line 20 in the part where no scanning signal is input will be disconnected from the driving source. However, in a usual manufacturing process of active matrix substrates, since the gate bus lines 20 are formed on the insulating substrate in the first patterning process, wiring defects such as breaks in lines are checked immediately after the patterning. Therefore, the aforementioned breakage of the gate bus line 20 can be easily checked out, and there is little possibility of manufacturing active matrix substrates with broken gate bus lines 20 . The pixel defect area caused such as mentioned above is approximately equal to half the area of the pixel region surrounded by the gate bus line 20 and source bus line 30 . The pixel defect of this degree is tolerable in a conventional television receiver or the like. However, in display units requiring high resolution performance, it becomes necessary to correct the defect on the active matrix substrate. In the active matrix substrate of this embodiment, defect correction proceeds in the following way. If, for example, either one of the TFTs 50 and 51 connected to the same gate bus line 20 becomes defective and therefore unable to be driven, the pixel electrode connected to the defective TFT 50 or 51 will not function. Then, as shown by the oblique lines 70 and 70 in Fig. 4a, the ends of the spare line 60 disposed spanning the gate bus line 20 are electrically connected by means of the photo-assisted CVD technique to the pixel electrodes 40 and 41 in the pixel regions in which the respective ends are positioned. Since the spare line 60 is insulated from the gate bus line 20 , the pixel electrodes 40 and 41 adjacent to each other across the gate bus line 20 become electrically connected to each other for simultaneous operation. The pixel electrode connected to the defective TFT 50 or 51 is thus driven through the other pixel electrode and the spare line 60 by the other TFT that functions properly. Each of the TFTs 50 and 51 connected to the pixel electrodes 40 and 41 , respectively, has the capability of driving the pair of pixel electrodes 40 and 41 after completion of the defect correction. Also in this embodiment, in the case of a broken source bus line 30 , the broken line can be easily corrected using the spare line 60 . Usually, most of the breakage of the source bus line 30 is caused to the stepped portion thereof where it intersects the gate bus line 20 . As shown in Fig. 4b, when a break 31 is caused in the source bus line 30 at its stepped portion above the gate bus line 20 , as shown by slash marks 71 of Fig. 4c, the portions at both ends of the spare line 60 that protrude toward the source bus line 30 are connected by means of the photo-assisted CVD technique to the respective portions of the source bus line 30 that face the protruding portions. Thus, the spare line 60 is made to span the break 31 to provide electrical connection between the separated portions of the source bus line 30 , thus correcting the defect caused by the break of the source bus line 30 . This embodiment shows the arrangement in which the pixel electrodes 40 and 41 adjacent to each other across the gate bus line 20 are connected to the gate bus line 20 , but it is also possible to employ the arrangement in which a pair of pixel electrodes adjacent to each other across the source bus line 30 are connected to the source bus line 30 . As described above, in this embodiment, a plurality of pixel electrodes are disposed in each of the regions surrounded by the bus lines arranged in a grid-like form, each of the paired pixel electrodes disposed facing each other across the specified bus line being electrically connected to the bus line via a switching device. With this arrangement, if one of the paired pixel electrodes fails, the defect pixel area affected can be reduced to a minimum. In this embodiment, a spare line is provided which intersects in an insulated manner with the bus line between the paired pixel electrodes, the ends of the spare line being disposed in close proximity to the respective pixel electrodes. If the switching device connected to one of the paired pixel electrodes, or if the bus line connected to the switching device is broken, the spare line will then be used to provide electrical connection between the paired pixel electrodes. With this connection, the paired pixel electrodes are driven by the other switching device that properly functions. Furthermore, in this embodiment, the ends of the spare line are positioned in close proximity to the side portions of the bus line across the portion thereof that intersects the bus line disposed between the paired pixel electrodes. If a break is caused in this intersecting portion, the ends of the spare line will then be connected to the side portions of the bus line spanning the broken point. The broken bus line can be corrected with this connection. In any of the above embodiments, TFTs are used as the switching devices, but instead of TFTs, MIM (metal-insulator-metal) devices, MOS transistors, diodes, varistors, etc., can be, of course, used.

Claims: An active matrix substrate comprising scanning lines (20) and signal lines (30) which are both disposed on an insulating substrate and arrayed in horizontal and vertical directions, respectively, a plurality of pixel electrodes (40,41), and a plurality of switching devices (50,51) electrically connected to said pixel electrodes within each region surrounded by the scanning and signal lines, wherein the pixel electrodes (40,41) are disposed in a pair adjacent to each other across either the scanning (20) or the signal (30) line, said scanning or signal line having a pair of branch lines, and are electrically connected via their respective switching devices (50,51) disposed on the pair of branch lines to the scanning (20) and the signal (30) lines, characterised in that each said region contains two pixel electrodes, and in that a spare line (60) is provided which intersects said line having the pair of branch lines in a mutually insulating manner, the ends of the spare line being respectively disposed in close proximity but unconnected to said pixel electrodes (40,41) disposed in a pair adjacent to each other across said line having the pair of branch lines, said spare lines being connectable to the respective pixel electrodes such that upon failure of a switching device both pixel electrodes are drivable by the other switching device. An active matrix substrate according to claim 1, wherein the respective ends of said spare line (60) are disposed in close proximity to the respective sides of the intersecting portion of the scanning (20) or signal (30) line which intersects said line having the pair of branch lines and extends adjacent to and in parallel with the other line.

Inventors: INUI MOTOKAZU, KANEMORI YUZURU, KATAYAMA MIKIO, MORIMOTO HIROSHI, NEGOTO HIDENORI, TANAKA HIROHISA, YANO KOUZOU, INUI, MOTOKAZU, KANEMORI, YUZURU, KATAYAMA, MIKIO, MORIMOTO, HIROSHI, NEGOTO, HIDENORI, TANAKA, HIROHISA, YANO, KOUZOU
Applicants: SHARP KK, SHARP KABUSHIKI KAISHA
Application year: 1989
Main classification: G02F1
IPC codes: H01L27, G02F1