Device for detecting positional relationship between two objects

Abstract: A device for detecting positional relationship between opposed first and second objects, includes a light source (72) for projecting light to the first (68) and second (60) objects; a photodetecting (82) system for detecting two lights from one of the first and second objects illuminated by the light from the light source, the photodetecting system detecting those two lights the position of incidence of each of which on a predetermined plane is changeable with the positional relationship between the first and second objects in a direction perpendicular to the direction in which the first and second objects are opposed; a position detecting system for detecting the positional relationship between the first and second objects in a direction perpendicular to the opposing direction of the first and second objects, on the basis of the relationship of the two lights, on the predetermined plane, as detected by the photodetecting system; and an interval detecting system for detecting the positional relationship between the first and second objects in the opposing direction, by using at least one of the two lights detected by the photodetecting system.

Description: This invention relates to a method and apparatus suitably usable, for example, in a semiconductor microcircuit device manufacturing exposure apparatus for lithographically transferring a fine electronic circuit pattern formed on the surface of a first object (original) such as a mask or reticle (hereinafter simply "mask") onto the surface of a second object (workpiece) such as a wafer, for measuring an interval between the mask and the wafer enabling control of the same to a desired value, and also for detecting any positional deviation of the mask and the wafer enabling the relative positioning or aligning of the mask and the wafer. In exposure apparatuses for use in the manufacture of semiconductor devices, the relative alignment of a mask and a wafer is one important factor in respect to ensuring improved performance. Particularly, as for alignment systems employed in recent exposure apparatuses, submicron alignment accuracies or more strict accuracies are required in consideration of the demand for higher degree of integration of semiconductor devices. In many types of alignment systems, features called "alignment patterns" are provided on a mask and a wafer and, by utilizing positional information obtainable from these patterns, the mask and wafer are aligned. As for the manner of executing the alignment, as an example there is a method wherein the amount of relative deviation of these alignment patters is detected on the basis of image processing. Another method is proposed in U.S. Patent Nos. 4,037,969 and 4,514,858 and Japanese Laid-Open Patent Application, Laid-Open No. Sho 56-157033 (JP-A-56-157 033 and GB-A-2 073 950), wherein so-called zone plates are used as alignment patterns upon which light is projected and wherein the positions of light spots formed on a predetermined plane by lights from the illuminated zone plates are detectred. GB-A-2073950 discloses an apparatus and the corresponding method for detecting a lateral relative position and a gap between a mask and a wafer disposed opposed the mask with a gap therebetween, the mask having a first physical optical element thereon and the wafer having a second physical optical element thereon, each of the optical elements having an optical power. The apparatus further comprises light source means arranged to project light through the first optical element onto the second optical element to produce at a detection plane at least two spots of light which are displaceable along the detection plane in dependence upon at least the lateral relative position of the mask and wafer. GB-A-2073950 further describes photodetecting means for detecting the spots of light and determination means adapted to use the spacing between the first spot of light and the second spot of light for determining the lateral relative position between the mask and the wafer. Generally, an alignment method utilizing a zone plate is relatively insensitive to any defect of an alignment pattern and therefore assures relatively high alignment accuracies, as compared with an alignment method simply using a traditional alignment pattern. Figure 1 is a schematic view of a known type alignment system utilizing zone plates. In Figure 1, a parallel light emanating from a light source 72 passes through a half mirror 74 and is focussed at a point 78 by a condensing lens 76. Thereafter, the light illuminates a mask alignment pattern 68a on a mask 68 and an alignment pattern 60a on a wafer 60 which is placed on a support table 62. Each of these alignment patterns 68a and 60a is provided by a reflection type zone plate and functions to form a spot of focused light on a plane perpendicular to an optical axis which contains the point 78. The amount of relative deviation of the positions of these light spots formed on that plane is detected, by directing the focused beams to a detection plane 82 by means of the condensing lens 76 and another lens 80. In accordance with an output signal from the detector 82, a control circuit 84 actuates a driving circuit 64 to relatively align the mask 68 and the wafer 60. Figure 2 illustrates an imaging relationship of lights from the mask alignment pattern 68a and the wafer alignment pattern 60a shown in Figure 1. In Figure 2, a portion of the light divergently advancing from the point 78 is reflectively diffracted by the mask alignment pattern 68a and forms a spot 78a of focused light at or adjacent to the point 78, the spot representing the mask position. Another portion of the light passes through the mask 68 in the form of a zero-th order transmission light and is projected upon the wafer alignment pattern 60a on the wafer 60 surface with its wavefront being unchanged. The incident light is reflectively diffracted by the wafer alignment pattern 60a and then passes again through the mask 68 in the form of a zero-th order transmission light, and finally is focused in the neighborhood of the point 78 to form a spot 78b of focused light, representing the wafer position. In the illustrated example, when the light diffracted by the wafer 60 forms a spot, the mask 68 functions merely as a transparent member. The position of the spot 78b formed by the wafer alignment pattern 60a in the described manner represents a deviation Δσ', in the plane perpendicular to the optical axis containing the point 78, of an amount corresponding to the amount of deviation Δσ of the wafer 60 with respect to the mask 68 in a direction along the mask or wafer surface (in a lateral direction in this case). Figure 3 is a schematic view of an interval measuring device of the type as proposed in Japanese Laid-Open Patent Application Sho JP-A-61-111402. In this Figure, a mask (first object) M and a wafer (second object) W are disposed opposed to each other, and by means of a lens L1, light is focused at a point Ps between the mask M and the wafer W. Here, a portion of the light is reflected by the mask M surface and another portion is reflected by the wafer W surface, these lights are projected and focused through a lens L2 at points P W and P M on the surface of a screen S. The interval between the mask M and the wafer W is detected by detecting the spacing between the spots P W and P M of focused lights upon the screen S surface. However, the structures shown in Figures 1 and 3 are completely different and if it is desired to detect both any lateral relative positional deviation between two objects and the interval therebetween, it is necessary that a lateral relative positional deviation detecting device and an interval measuring device are provided separately. This makes the whole structure bulky and complicated. The Journal of Vacuum Science and Technology, Part B, vol. B1, no. 4, Oct.-Dec. 1983, p. 1276-1279 discloses a dual grating alignment technique capable of detecting both the lateral position and gap by summing the intensities between the +1st and -1st order diffracted light. US Patent 4360273 discloses an alignment method and apparatus wherein a mask and a wafer each have an optical element formed thereon, and light projected onto the optical element of the mask is transmitted to impinge on the optical element of the wafer. Alignment is achieved by an operator observing a pattern formed on a screen, and adjusting the relative positions of the mask and wafer. An object of the present invention is to provide a method and apparatus for detecting positional relationship between two objects, by which any lateral relative positional deviation between the objects as well as the interval therebetween can be detected simultaneously, if desired, with a simple and compact structure. According to one aspect of the invention there is provided a method of detecting a lateral relative position and a gap between a first object and a second object disposed opposite to said first object with a gap (gm) therebetween by using a first physical optical element on said first object and a second physical optical element on said second object, wherein each of said first and second physical optical elements has an optical power, said method including the steps of: projecting light through said first optical element onto said second optical element to produce at a detection plane at least two spots of diffracted light of a diffraction order not lower than first order diffraction which are displaceable along said detection plane in dependence upon at least the lateral relative position of said first and second objects; detecting said spots of light; and determining the lateral relative position of the said first and second objects on the basis of the spacing between said at least two spots of light and determining the gap between said two objects on the basis of the size of at least one of the spots of light. According to a second aspect of the invention there is provided apparatus for detecting a lateral relative position and a gap between a first object and a second object disposed opposed said first object with a gap (gm) therebetween, said first object having a first physical optical element thereon and said second object having a second physical optical element thereon, each of said optical elements having an optical power, the apparatus further comprising light source means arranged to project light through said first optical element onto said second optical element to produce at a detection plane at least two spots of diffracted light of a diffraction order not lower than first order diffraction, which are displaceable along said detection plane in dependence upon at least the lateral relative position of said first and second objects; photodetecting means for detecting said spots of light; and determination means adapted to use the spacing between the first said spot of light and the second spot of light for determining the lateral relative position between said first and second objects, and the size of at least one of the first and second spots of light for determining the gap between said first and second objects. Embodiments of the present invention will now be described with reference to the accompanying drawings in which: Figures 1 and 2 illustrate a known type alignment system. Figure 3 illustrates a known type interval measuring device. Figure 4 is a perspective view of a major part of an apparatus according to a first embodiment of the present invention. Figures 5 and 6 are schematic representations, respectively, illustrating the principle of the apparatus of the Figure 4 embodiment, wherein the optical paths are shown in unfold views, respectively. Figure 7 illustrates example of patterns to be provided on a mask and a wafer, in the Figure 4 embodiment. Figures 8 and 9 illustrate the relationship between the mask-to-wafer interval and the spot diameter, in the Figure 4 embodiment. Figures 10A and 10B are schematic representations, illustrating the principle of spot detection in accordance with the Figure 4 embodiment. Figures 11 and 12 are schematic representations, respectively, illustrating the principle of an apparatus according to a second embodiment of the present invention, wherein the optical paths are shown in unfolded views. Figure 13 is a perspective view of an apparatus which may be arranged in accordance with the first or second embodiment. Figure 14 is a perspective view of a major part of an apparatus according to an third embodiment of the present invention. Figure 15 is a schematic representation, illustrating the principle of the apparatus of the Figure 14 embodiment, wherein the optical paths are shown in unfold views. Figure 16 illustrates the relationship between the mask-to-wafer spacing and the spot diameter, in the Figure 14 embodiment. Figure 17 illustrates the relationship between a mask-to-wafer spacing and a spot diameter, to be assumed in a fourth embodiment of the present invention. Figure 18 illustrates an example of pattern area which is usable in each of the first, second and third embodiments. Figure 19 is a schematic representation of an apparatus according to a fifth embodiment of the present invention. Figure 20 is a schematic view of an apparatus according to a sixth embodiment of the present invention. Figures 21 and 22 are schematic representations, respectively, illustrating modified forms of the first embodiment, wherein the optical paths are shown in unfolded views. Figure 4 is a perspective view of a major part of a first embodiment of the present invention. Figures 5 and 6 are schematic representations of the major part of the device, as viewed in a direction which is perpendicular to the alignment detecting direction and which is parallel to first and second objects, the optical paths being illustrated in an unfolded state. Figures 5 and 6 are different, in respect to the spacing between the first and second objects. In Figure 4 denoted at 1 is a light supplied from a light source such as, for example, an He-Ne laser or a semiconductor laser. Denoted at 2 is a first object which is a mask, for example, and denoted at 3 is a second object which is a wafer, for example. The mask 2 and the wafer 3 are disposed opposed to each other with a spacing g AF (Figures 4 and 5) or a spacing g AA (Figure 6) maintained therebetween. Numerals 106 1 , 106 2 and 106 3 denote first, second and third physical optic elements each being provided in a portion of a mask 2. Numerals 107 1 , 107 2 and 107 3 denote first, second and third physical optic elements each being provided in a portion of the wafer. Each of these physical optic elements 106 1 - 106 3 and 107 1 - 107 3 is formed, for example, by a diffraction grating or a Fresnel zone plate (which hereinafter will be referred also to simply "FZP"). Figure 7 shows examples of patterns for the physical optic elements 106 1 - 106 3 and 107 1 - 107 3 to be provided on the mask 2 and the wafer 3. Denoted at 4 and 5 are first and second light receiving means (sensors) each comprising a line sensor or a position sensing diode (PSD), for example, and each being adapted to detect, for example, the position of center of gravity of each inputted light 108 1 , 108 2 or 108 3 . Signal processing circuit 9 is adapted to process the signals from the light receiving means 4 and 5 to detect, for example, the position of center of gravity of each light 108 1 , 108 2 or 108 3 incident on the light receiving means 4 or 5. Also, the signal processing circuit is adapted to determine, by calculation, any positional error δ and the spacing d 0 , between the mask 2 and the wafer 3. In this embodiment, light 1 (whose wavelength λ = 830 nm, for example) from a semiconductor laser LD is incident on the first, second and third Fresnel zone plates 106 1 , 106 2 and 106 3 on the mask 2, at an angle . Diffraction lights of a predetermined order or orders, diffracted perpendicularly from the mask 2, are reflectively diffracted by the FZP patterns 107 1 , 107 2 and 107 3 on the wafer 3 surface. Those of the diffraction lights of a predetermined order or orders, reflectively diffracted by the FZP patterns 107 1 - 107 3 on the wafer 3, which pass the mask 2 without being affected thereby (i.e. in the form of zero-th order transmission light), are received by the light receiving means 4 and 5. Here, the positions of the gravity center of the inputted lights 108 1 , 108 2 and 108 3 , incident on the surfaces of the light receiving means 4 and 5, are detected by these light receiving means 4 and 5. By using output signals from the light receiving means 4 and 5, the signal processing circuit 9 calculates the amount of positional error between the mask 2 and the wafer 3 as well as the surface spacing between them. The present embodiment uses three detection systems, i.e., a detection system A comprising first physical optic elements 106 1 and 107 1 ; a detection system B comprising second physical optic elements 106 2 and 107 2 ; and a detection system C comprising the third physical optic elements 106 3 and 107 3 , provided on the mask 2 and the wafer 3. Of these detection systems, the detection system A and the detection system B cooperate to provide a positional deviation detecting system. The detection system B is used in common, and the detection systems B and C cooperate to provide a surface spacing detecting system. In regard to the light converging or diverging effect of the Fresnel zone plates shown in Figures 5 and 6, each of the FZP patterns 106 1 , 107 2 and 107 3 has a converging, positive power, while each of the FZP patterns 106 2 , 106 3 and 107 1 has a diverging, negative power. The Fresnel zone plate is not limited to one having a refracting or diverging function only in respect to the alignment direction. Namely, in this embodiment, such a Fresnel zone plate as having two-dimensional refracting or diverging function is usable. In the Figure 6 example, the mask 2 and the wafer 3 are disposed close to each other (the surface spacing is 5 - 100 µm, for example), so that the arrangement is suitably incorporated into what can be called an "X-ray stepper" wherein the exposure is made by using X-rays. Usually, in an X-ray stepper, an exposure area per one exposure using X-rays is of a size 10 to several tens millimeters square, and while intermittently shifting the wafer 3 position, exposures of twenty (20) to several tens shots are made. For this reason, in many cases, the spacing between a mask and a wafer at the time of relative movement of them, for each shot, differs from the spacing between the mask and the wafer as measured just before the initiation of the exposure operation through a positional deviation detecting system (auto alignment system). The surface spacing illustrated in Figure 6 is one as assumed at the time of autoalignment, and it is of an order of 5 - 100 µm as described hereinbefore. As compared therewith, the surface spacing illustrated in Figure 5 is one as assumed at the time of wafer movement, and it is large, of a value of 50 - 200 µm. As described, the surface spacing at the time of wafer movement is set to be large. This is made so as to prevent contact of the wafer with the mask surface during movement of the former along the X-Y plane, due to any surface height irregularity or tilt (inclination) of the wafer. The spacing g AF in Figure 5 is one for which the mask and the wafer are set for execution of the wafer movement (shot area movement) and, in this state, the actual spacing between the mask and the wafer is detected. This is called "autofocusing". The spacing g AA shown in Figure 6 is one for which the mask and the wafer are set for execution of detection of any positional deviation therebetween (autoalignment), the mask and the wafer being set to this spacing on the basis of the measurement of the surface spacing as the mask and the wafer are placed at the spacing g AF in Figure 5. Next, description will be made of the position of incidence and the spot diameter of each inputted light 108 1 , 108 2 or 108 3 on the light receiving means 4 or 5. It is now assumed for convenience that in Figure 5 the mask 2 and the wafer 3 have relative positional deviation of an amount δ in respect to a vertical direction as viewed in the sheet of the drawing. Also, it is assumed that the light spots 108 1 , 108 2 and 108 3 formed on the sensors 4 and 5 are at the positions of distances y 1 , y 2 and y 3 , respectively, from the optical axes (pattern axes) 111 1 , 111 2 and 111 3 of the FZP patterns 106 1 , 106 2 and 106 3 on the mask 2, respectively. Numerals 112 1 , 112 2 and 112 3 denote the axes of the FZP patterns 107 1 , 107 2 and 107 3 , respectively, on the wafer. In respect to the X-coordinate, the optical axes 111 1 - 111 3 are aligned with the optical axes 112 1 - 112 3 , respectively, when δ = 0. The powers of the Fresnel zone plates 106 1 , 107 1 , 106 2 and 107 2 of the mask and the wafer are so set that, when the mask and the wafer is at the spacing g AA , spots 108 1 and 108 2 of smallest diameter are formed on the sensor 5. Also, the arrangement is such that, when the mask and the wafer is at the spacing g AF , a spot 108 3 of smallest diameter is formed on the sensor 104. Accordingly, when the deviation between pattern optical axes of the mask and the wafer is equal to a distance δ' and the spacing between the mask and the wafer is equal to the spacing g AA , a diffraction spot 108 1 ' provided by a detection system A, comprising the combination of the FZP patterns 106 1 and 107 1 , has a smallest diameter; a diffraction spot 108 2 ' provided by a detection system B, comprising the combination of the FZP patterns 106 2 and 107 2 , has a smallest diameter; and a diffraction spot 108 3 ' provided by a detection system C, comprising the combination of the FZP patterns 106 3 and 107 3 , is expanded and has a large diameter, focusing at a point farther than the sensor 4. In Figure 5 where f M1 ", f M2 " and f M3 " denote the focal lengths of the Fresnel zone plates 106 1 , 106 2 and 106 3 , respectively, in regard to first order diffraction light, and L 0 denotes the surface spacing between the mask 2 and the line sensors 4 and 5, the distances y 1 , y 2 and y 3 in Figure 5 can be written as follows: y 1 = (L 0 +2g AF -f M1 ")/(f M1 "-g AF )·δ y 2 = (L 0 +2g AF +f M2 ")/(f M2 "+g AF )·δ y 3 = (L 0 +2g AF +f M3 ")/(f M3 "+g AF )·δ Also, in Figure 6, if the mask 2 and the wafer 3 have relative positional deviation of an amount δ', the distances y 1 ', y 2 ' and y 3 ' of the positions of the gravity centers of the light spots 108 1 ', 108 2 ' and 108 3 ', respectively, can be written as follows: y 1 ' = (L 0 +2g AA -f M1 ")/(f M1 "-g AA )·δ' y 2 ' = (L 0 +2g AA +f M2 ")/(f M2 "+g AA )·δ' y 3 ' = (L 0 +2g AA +f M3 ")/(f M3 "+g AA )·δ' Here, each FZP on the mask or wafer has a pattern such as shown in Figure 7, for example, and each pattern on the wafer is provided in a scribe line. Due to the diffraction effect of each of the Fresnel zone plates 106 1 and 107 1 ; 106 2 and 107 2 ; and 106 3 and 107 3 , a change in the gap between the mask 102 and the wafer 103 causes a change in the diameter of each spot on the sensor 4 or 5 surface, since the imaging relationship is determined by the focal lengths of the Fresnel zone plates on the mask and the wafer. The manner of such change is illustrated in Figure 8, by way of example. Figure 8 shows this change, in terms of a half width of each light spot on the sensor 4 or 5. Figure 9 illustrates the relationship between a half width ø AA and a change in the diameter of a diffraction spot provided by the detection system A, for example, comprising the combination of the FZP patterns 106 1 and 107 1 . Setting is made so that, when the spacing becomes equal to that for the autoalignment (see Figure 6 part (A)), the spot diameter becomes smallest. For a larger spacing g b or larger spacing g AF , the half width ø 1 or ø AF becomes gradually larger. The half width on the sensor 5 of a spot of light diffracted by the detection system B, comprising a combination of the FZP patterns 106 2 and 107 2 , as well as the half width on the sensor 4 of a spot of light diffracted by the detection system C, comprising a combination of the FZP patterns 106 3 and 107 3 , are set such as shown in Figure 8. Here, the state of spots on the sensors 5 and 4 when the mask and the wafer are at the spacing g AF , as in Figure 5, is illustrated in Figure 10A. Of the formed spots 108 1 , 108 2 and 108 3 , the spacing between the spots 108 1 and 108 2 in the alignment detecting direction (e.g. the distance between the positions of gravity centers) provides the information related to a deviation between the mask and the wafer in a plane (alignment error), while the size of each of the spots 108 2 and 108 3 (e.g., a width that corresponds to a half of a peak value) provides the information related to the surface spacing between the mask and the wafer. A particular numerical example of this embodiment will be explained below. It is now assumed that L 0 = 18345.94 µm; g AF = 71.5 µm; g AA = 30 µm; the diffraction by the combination of FZP patterns 106 1 and 107 1 is effective to form a smallest spot on the sensor when the spacing is equal to g AA ; and the displacement y 1 ' of a spot on the sensor surface is of an amount one-hundred (100) times larger than the deviation δ' between the mask and the wafer. The diffraction by the combination of FZP patterns 106 2 and 107 2 is set so that the spot on the sensor surface becomes smallest when the spacing is equal to g AA . The displacement of the spot on the sensor is of an amount one-hundred (100) times larger than the positional deviation between the mask and the wafer. The diffraction by the detecting system C, comprising the combination of FZP patterns 106 3 and 107 3 , is set so that the spot on the sensor surface becomes smallest when the spacing is equal to g AF . Here, y 1 '/δ' = (L 0 + 2g AA - f M1 ")/(f M1 " - g AA ) = (18345.94 + 60 - f M1 ")/(f M1 " - 30) = 100 It follows therefrom that: f M1 " = 211.94 µm. Also, y 2 '/δ' = (L 0 + 2g AA - f M2 ")/(f M2 " - g AA ) = (18345.94 + 60 + f M2 ")/(f M2 " + 30) = 100 From this, it follows that: f M2 " = 155.62 µm. Further, y 3 '/δ = (L 0 + 2g AA + f M3 ")/(f M2 " + g AA ) = (18345.94 + 143 + f M2 ")/(f M3 " + 71.5) = 100 From this, it follows that: f M3 " = 114.53 µm If the deviation δ = δ' = 2 microns, the relationship between the spacing and the distances y 1 , y 2 , y 3 , y 1 ', y 2 ' and y 3 ', is such as follows: Gap y 1 ' y 2 ' y 3 ' 30 µm 200 200 256.29 71.5 µm - - - Gap y 1 y 2 y 3 30 µm - - - 71.5 µm 260.28 164.18 200 (unit: µm) From the change in the spacing between the spots 108 1 ' and 108 2 ', the position deviation (alignment error) between the mask and the wafer is detectable. As set forth in the numerical example, a deviation between the mask and the wafer of an amount 2 µm causes a change in the spacing between the light spots 108 1 ' and 108 2 ' on the sensor surface by 400 µm. (Particular note should be paid to the values of the distances y 1 ' and y 2 '.) The spacing between the mask and the wafer is measured, not by measuring the spacing between the spots 108 2 and 108 3 on the sensor surface, but by measuring the size of each of the spots 108 2 and 108 3 , in the manner described with reference to Figure 8. Actually, as illustrated in Figure 10B on the line sensors 4 and 5 there are obtained output signals of picture elements of each sensor in the unit of bit. Thus, when an output of the i-th bit is denoted by Ii and the bit size of the line sensor is denoted by l , the position M of the center of gravity if it is used to represent the position of the spot, can be written as follows: wherein, i I : the number of a smallest address of the bits providing the spot distribution; and i f : the number of a largest address of the bits providing the spot distribution. The positions of the gravity centers of the spots 108 1 , 108 2 and 108 3 , determined in this manner are illustrated at M 1 , M 2 and M 3 in Figure 10B, by way of example. Next, the calculation of the half width of the spot 108 2 will be explained. Since usually a spot has an intensity distribution, like an Airy pattern called in the field of lenses, in this example, it is considered that the spot has such as distribution of intensity like that. For example, if a functional form of polynominal is applied to some bits, around the maximum output bit, of a line sensor, a maximum value in a spatially continuous output distribution on the sensor surface is obtainable from actually measured values of the output of these bits. When the maximum value is expressed by Imax, detection may be made to obtain a spatial value on the sensor that correspond to "Imax/2", from interruptedly changing outputs. Also, in such case, if the shape of the spot distribution is given by function approximation of polynomial and calculations are made to detect the value on the sensor that corresponds to "Imax/2", the half width of the light spot 108 2 can be determined with a precision of an order of 1/10 - 1/30 of the sensor bit size. As an example, in this embodiment, if the size of each of the FZP patterns 106 1 - 106 3 and 107 1 - 107 3 is about 50 µm x 90 µm, the spot diameter is about 200 - 800 µm. If the sensor bit size is about 500 µm x 15 µm (pitch), the precision of detection of the half width of the spot can be 1 µm. Accordingly, by utilizing the characteristics that the spot half width changes such as shown in Figure 8, it is possible to detect the spacing between the mask and the wafer on the basis of detection of the half width of the spot 108 2 and the half width of the spot 108 3 . While the relationship between the mask-and-wafer spacing and these half widths can be predetermined in accordance with design values, such relationship may be detected by experiments. In the present embodiment, as described hereinbefore, the detection system B which comprises a combination of Fresnel zone plates 106 2 and 107 2 , is used both for the autoalignment and for the autofocusing. This allows that, with a relatively small pattern area surface such as shown in Figure 7, the two functions of autoalignment and autofocusing are provided. Further, in this embodiment, use is made of the fact that only the spacing between the spots 108 1 ' and 108 2 ' provides the information related to the positional deviation between the mask and the wafer, even if, as an example, the wafer is inclined or the relative positional relationship of the alignment detecting system (sensors 4 and 5 and detection processing portion 9 in Figure 4 with the mask and the wafer changes slightly, the spots 108 1 ' and 108 2 ' on the sensor 5 changes by the same amount and the spacing itself between these spots is not affected by the wafer inclination or an error in the relative position of the detecting system with respect to the mask and the wafer. Therefore, stable detection is attained. In the first embodiment shown in Figure 4, it is not always necessary that the sensors 4 and 5 are directly disposed. In place thereof, the structure may be such that an aerial image of the light spot formed at the sensor 4 or 5 position is relayed by a lens system and the light therefrom may be projected to a line sensor or an area sensor. In the first embodiment shown in Figure 4, the alignment (autoalignment) of the mask and the wafer is executed by using those Fresnel zone plates on the mask and the wafer having lens functions like a convex-concave system and a concave-convex system, while the detection of the surface spacing between the mask and the wafer (autofocusing) is executed by using a concave-convex system and a concave-convex system. However, the power arrangement may be set as desired. As an example, the autofocusing may be made by using a concave-convex system and a convex-concave system. Namely, in the present embodiment, any combination is usable provided that the focal lengths of the mask patterns and wafer patterns are adjusted and set so that the size of each of the spots, corresponding to the spots 108 2 and 108 3 , changes with the spacing between the mask and the wafer. In place of the line sensors, a two-dimensional area sensor may be used for the sensors 4 and 5 of the present embodiment. Further, the sensor arrangement may be made so that three light spots are projected to a single line sensor. Figures 11 and 12 are schematic views, respectively, of a major part of a second embodiment of the present invention. Like Figures 5 and 6, Figures 11 and 12 show the optical paths, in an unfolded view, as the spacing between a first object (mask) 2 and a second object (wafer) 3 are changed, and these Figures show the device as viewed in a direction perpendicular to the alignment detecting direction. In the states shown in Figures 11 and 12, respectively, the alignment of the mask 2 with the wafer 3 has been completed, such that no positional deviation is present therebetween. In this embodiment, the autoalignment is executed by using a concave-convex system (detection system A) and a convex-concave system (detection system B), and is made by detecting the change in the spacing, on the sensor surface, between two spots obtained from these two detection systems. Also, the autofocusing is executed by using the convex-concave system (detection system B) and a convex-concave system (detection system C), and is made by detecting the size of each spot obtained from these two detection systems. In Figures 11 and 12, for the autoalignment, measurement is made to the spacing between a spot 116 1 ' produced as a result of the diffraction at Fresnel zone plates 113 1 and 114 2 and a spot 116 2 ' produced as a result of the diffraction at Fresnel zone plates 113 2 and 114 2 and, subsequently, any positional deviation between the mask and the wafer in a plane is detected essentially in the same principle as having been described with reference to the first embodiment. Also, in regard to the spacing, it is detected in the same way as having been described with reference to the first embodiment i.e. by measuring the size of a spot 116 2 ' produced as a result of the diffraction at Fresnel zone plates 113 2 and 114 2 and the size of a spot 116 3 ' produced as a result of the diffraction at Fresnel zone plates 113 3 and 114 3 . In regard to the first and second embodiments, description has been made to examples wherein only one-dimensional detection is made for an alignment error (positional deviation). However, for actual alignment of a mask and a wafer in a plane, it is necessary to detect three parameters in the X, Y and  directions. If this is desired, as shown in Figure 13, patterns used in the foregoing embodiments (e.g. those shown in figure 16) may be provided outside a semiconductor circuit area 20 and at positions on a scribe line which is going to be used for the cutting, when it is on a wafer. In Figure 13 numerals 118 1 , 118 2 , 118 3 and 118 4 each denotes an FZP. The example shown in Figure 13 is of proximity type wherein a mask and a wafer are disposed close to each other. In this Figure, numerals 119 1 , 119 2 , 119 3 and 119 4 each denotes a detection system for executing the autoalignment or the autofocusing. Numerals 121 1 , 121 2 , 121 3 and 121 4 s each denotes a light projected on a pattern. Also, numerals 122 1 , 122 2 , 122 3 and 122 4 each denotes a signal light which is obtainable as a result of diffraction by a combination of corresponding Fresnel zone plates of the mask and the wafer. The signal light comprises plural spots. The detection system 119 1 has an ability of detecting one-dimensional lateral deviation in the X direction. Similarly, the detection system 119 2 , the detection system 119 3 and the detection system 119 4 have respective abilities for detecting positional deviations in the Y direction, X direction and Y direction, respectively. Where the detected values on the deviation as obtainable from these four detection systems are denoted by Δx 1 , Δy 1 , Δx 2 and y 2 , it is sufficient for the detection of the positional deviation between the mask and the wafer to detect translational errors ΔX and ΔY and a rotational error Δ. These errors can be easily determined from the four values (Δx 1 , Δx 2 , Δy 1 and Δy 2 ). Also, the spacing between the mask and the wafer is detected at the four points near the Fresnel zone plates 118 1 , 118 2 , 118 3 and 118 4 . In accordance with the first and second embodiments as described hereinbefore, the detection of a three-dimensional positional error between a mask and a wafer as well as the positioning control for them based on the detection, can be done at high precision. Figure 14 is a perspective view of a major part of a third embodiment of the present invention. In this embodiment, one of sets of diffraction patterns, from a mask and a wafer, each producing two spots for detection of the spacing between the mask and the wafer, uses zero-th order regular reflection by the wafer. That is, the present embodiment is an example wherein the wafer surface may have no pattern. In Figure 14 numerals 123 1 , 123 2 and 123 3 each denotes an FZP on the mask. Figure 15 illustrates details of diffraction, as viewed in a direction perpendicular to the alignment detecting direction (Figure 14) and in parallel to the mask and the wafer, wherein the reflective diffraction by the wafer being illustrated as an equivalent, transmissive diffraction wave. In this embodiment, a pattern of a FZP 124 3 is provided on the mask, and by detecting the spacing between (i) a spot obtainable by diffraction at a detection system A, comprising a combination of FZP patterns 123 1 and 124 1 , and (ii) a spot 127 2 obtainable by diffraction at a detection system B, comprising a combination of FZP patterns 123 2 and 124 2 , the mask-to-wafer deviation (alignment error) is detected. On the other hand, the surface spacing (gap) between the mask and the wafer is detected by detecting the size of a spot 127 2 , on a sensor 5 surface, obtainable by diffraction at the detection system B comprising the combination of FZP patterns 123 2 and 124 2 , and the size of a spot 127 3 , on a sensor 4 surface, obtainable by diffraction at a detection system C, comprising a combination of FZP patterns 123 3 and 124 3 . The optical function of the remaining portion is the same as that of the first embodiment. By using the Fresnel zone plates 123 3 and 124 3 provided on the mask, it is possible to reduce in size of the pattern area on the wafer. This is a significant feature of the present embodiment. As illustrated in part (c) of Figure 15, the surface spacing between the Fresnel zone plates 123 3 and 124 3 is equal to 2 x g AF , and the focal lengths and the imaging relationship of the patterns of these zone plates are set in consideration of it. It is assumed in Figure 15 that the mask and the wafer have relative positional deviation of an amount Δ and, in that occasion, the centers of light spots (more exactly, chief rays of them) are at the positions of distances , and , respectively, from the optical axes of the FZP patterns 123 1 , 123 2 and 123 3 , respectively, of the mask. Then, the following relations are satisfied: In accordance with the relations of equations (8), (9) and (10), the spacing between (i) a spot 127 1 produced by the combination of FZP patterns 123 1 and 124 1 (combined power of a concave-convex system) and (ii) a spot 127 2 produced by a combination of FZP patterns 123 2 and 124 2 (combined power of a convex-concave system) is calculated. Then, from the detected spacing, the positional deviation (alignment error) between the mask and the wafer is detected. Each of the FZP patterns 123 1 - 123 3 and 124 1 - 124 3 has a lens function only in respect to the alignment detecting direction. However, it may have a lens function in respect to two-dimensional directions and, additionally, an area sensor may be used in place of the line sensors to detect the motion of each light spot. In regard to the change in the half width of each spot formed on a sensor surface by a combination of corresponding patterns, the setting is such that each of a spot produced by a combination of FZP patterns 123 1 and 124 1 and a spot produced by FZP patterns 123 2 and 124 2 , all being used for the autoalignment, becomes smallest when the spacing g AA is established; while a spot produced by FZP patterns 123 3 and 124 3 becomes smallest when the gap g AF is established. In regard to the manner of change in the diameter of diffraction light spot on the sensor 4 or 5 with the spacing between the mask and the wafer, many variations are possible. An example is illustrated in Figure 16. When, for example, a mask and a wafer are equipped with combinations of patterns, providing three detection systems A, B and C and if the autoalignment is made through the detection systems A and B while the autofocusing (gap measurement) is made through the detection systems B and C, as seen from Figure 16, the detection system A may have a combined power of a convex-concave system or a concave-convex system, with a minimum spot being provided by a spacing g AA - α; the detection system B may have a combined power of a concave-convex system or a convex-concave system, with a minimum spot being provided by a spacing g AA + α; and the detection system C may be any one of a convex-concave system and a concave-convex system, with a minimum spot being provided by a spacing g AF . Here, the autoalignment is made at a set gap g AA . The value α may be such by which the spot at the time of autoalignment is not defocused greatly. Here, depending on the value of the spacing, it is possible to measure the spacing on the basis of the magnitude of defocus of each of the three spots (i.e. spot size) formed by the three pattern combinations of the detection systems A, B and C. Therefore, it is possible to detect the spacing between the mask and the wafer, at higher precision. As an alternative, when a mask and a wafer are equipped with two sets of patterns which are used to provide detection systems A and B, the setting may be made so that the spot diameter of a sensor changes with the spacing between the mask and the wafer, in a manner as shown in Figure 17: wherein the detection system A may have a combined power of a convex-concave system or a concave-convex system, with a minimum spot being provided by a spacing near "2g AA - 2g AF "; and the detection system B may have a combined power of a concave-convex system or a convex-concave system, with a minimum spot being provided by a spacing g AF . Any positional deviation (alignment error) between the mask and the wafer can be detected on the basis of the spacing between a spot on a sensor formed by the pattern combination of the detection system A and a spot on a sensor formed by the pattern combination of the detection system B. On the other hand, the spacing between the mask and the wafer can be detected on the basis of the size of the spot on the sensor formed by the pattern combination of the detection system A as well as the size of the spot on the sensor formed by the pattern combination of the detection system B. As described, in this embodiment, it is possible to detect both of the positional deviation and the spacing, by using two lights. In regard to the setting of pattern areas on a mask and a wafer, in addition to the example shown in Figure 7 there are many possible variations of the manner of division thereof. An example is illustrated in Figure 18. In this Figure, a set of FZP patterns 128 1 and 129 1 ; a set of FZP patterns 128 2 and 129 2 ; and a set of FZP patterns 128 3 and 129 3 provide detection systems, respectively, producing respective spots. In respect to some embodiments above, description has been made to examples wherein a mask and a wafer are brought into alignment with each other while being maintained in a proximity relationship, such as in the case of an X-ray stepper. However, the invention is not limited to this, and it is applicable also to a stepper which uses a ultraviolet light or an excimer laser or a reduction imaging type exposure apparatus that uses mirrors, for example. Figure 19 is a schematic view of one embodiment wherein the invention is applied to a stepper that uses ultraviolet light or an excimer laser. In this Figure, denoted at 150 is a pattern illuminating light. Numerals 135 1 , 135 2 and 135 3 denote patterns provided on a reticle 151 for alignment and autofocusing purpose. Numeral 130 denotes an imaging lens by which the reticle 151 and a wafer 131 are brought into an optically conjugate relationship. In this embodiment, diffraction lights 136 1 , 136 2 and 136 3 from alignment patterns 132 1 , 132 2 and 132 3 on the wafer 131 go through the imaging lens 130 and are received by a sensor 137. The spacings of thus produced spots 133 1 , 133 2 and 133 3 as well as the spot size thereof are detected by a processing system 134. By this, any positional deviation (alignment error) between the reticle and the wafer in a plane as well as any relative deviation therebetween in the direction of the optical axis of the imaging lens 130, can be detected. If, in this occasion, the imaging lens 130 shows chromatic aberration with respect to the used light 150, the patterns of the Fresnel zone plates 135 1 , 135 2 and 135 3 and the patterns of the Fresnel zone plates 132 1 , 132 2 and 132 3 on the wafer are set in consideration of this. Figure 20 is a schematic view of one embodiment wherein the invention is applied to a reduction type stepper, using mirrors. In this example, a pattern 143 on a reticle 138 surface and a pattern 144 on a wafer 142 surface are used in the manner described with reference to the foregoing embodiments, to detect the spacing and size of spots 149 1 , 149 2 and 149 3 on a line sensor or area sensor 146 to detect any positional deviation between the reticle 138 and the wafer 142 as well as any relative deviation therebetween in the direction of an optical axis of the optical arrangement constituted by mirrors 139, 140 and 141. Also in the embodiments shown in Figures 19 and 20, the sensor may not be disposed at the illustrated plane but, in place thereof, a relay lens may be disposed at that position and the sensor may be placed in the imaging plane of the lens. Figure 21 shows a modified form of the Figure 4 embodiment. In this example, the combination of patterns 106 1 and 107 1 ; 106 2 and 107 2 shown in part (A) and (B) of Figure 2, is used as it is and the alignment error is detected essentially in the same principle as of the Figure 4 embodiment. On the other hand, the spacing between the mask and the wafer is detected only by using the diameter of a spot 108 2 , singly, on a sensor 4. The relationship between the mask-and-wafer spacing and the spot diameter on the sensor, based on the combination of patterns 106 2 and 107 2 , is such as illustrated in Figure 8. By detecting this relationship in preparation, it is possible to detect the mask-and-wafer spacing from the spot diameter. Figure 22 shows another modified form of the Figure 4 embodiment. In this example, the combination of patterns 106 2 and 107 2 ; 106 3 and 107 3 illustrated in parts (B) and (C) of Figure 4, is used as it is and the mask-and-wafer spacing is detected essentially in the same principle as of the Figure 4 embodiment. In contrast, with regard to the alignment error between the mask and the wafer, in this example, it is detected on the basis of the position of a spot 108 2 on a sensor 4. This will be explained below. As a mask is initially set in an apparatus, a reference position of the spot 108 2 (i.e. the position thereof as assumed when the mask and the wafer have no relative positional deviation and they are set at a correct spacing g AA ) is determined. This can be done by trial printing, for example. In the actual position detecting operation, first the spacing between the mask and the wafer is measured in accordance with the principle described hereinbefore, and, thereafter, any error in the spacing is corrected to set the mask and the wafer at the correct spacing. Then, any deviation of the spot 108 2 at that time from its reference position is measured to obtain y 2 . Since values L 0 and f M2 " are predetected, from equation (5" ') it is possible to obtain deviation δ'. In accordance with these embodiments, as described hereinbefore, for detection of relative positional deviation and surface spacing between first and second objects, a plurality of physical optic elements are provided on the first and second objects in a manner that a part thereof are used in common and, additionally, diffraction lights of a predetermined order or orders, not lower than first or second order, from these physical optic elements are used. This provides the following advantageous effects: (a) Since a part of the physical optic elements is used in common for the detection of positional deviation and the detection of surface spacing, only a small area is required for the pattern setting. (b) Since the positional deviation and the surface spacing can be detected with one light, a device as a whole can be made compact. (c) No error results from any inclination of the second object (wafer) or from an error in the setting of the detecting system. Therefore, high-detection is attainable. (d) The positional deviation and the surface spacing can be detected simultaneously.

Claims: A method of detecting a lateral relative position and a gap between a first object (2) and a second object (3) disposed opposite to said first object (2) with a gap (gm) therebetween by using a first physical optical element (6) on said first object (2) and a second physical optical element (7) on said second object (3), wherein each of said first and second physical optical elements (6,7) has an optical power, said method including the steps of: projecting light (1) through said first optical element (6) onto said second optical element (7) to produce at a detection plane at least two spots of diffracted light (8,16,21,28,33,43,108,116,127) of a diffraction order not lower than first order diffraction which are displaceable along said detection plane in dependence upon at least the lateral relative position of said first and second objects (2,3); detecting said spots of light (8,16,21,28,33,43, 108,116,127); and determining the lateral relative position of the said first and second objects (2,3) on the basis of the spacing between said at least two spots of light and determining the gap between said two objects (2,3) on the basis of the size of at least one of the spots of light. A method as claimed in claim 1 wherein said first and second optical elements (6,7) comprise a convergent and divergent optical element respectively for a respective produced spot of light or a divergent and convergent optical element respectively for a respective produced spot of light and the light projected onto said first and second optical elements (6,7) is brought to respective foci thereby. A method as claimed in claim 1 or claim 2 wherein a third spot of light is produced at said detection plane, the gap between said first and second objects (2,3) being determined from the size of at least one of said first, second or third spots of light. A method as claimed in any preceding claim wherein said first and second optical elements (6,7) comprise zone plate patterns. A method of aligning a first object (2) with a second object (3) comprising the steps of determining the lateral relative position and gap between said first and second objects (2,3) using the method of any one of claims 1 to 4; and aligning said first and second objects (2,3) in dependence upon the determined lateral relative position and gap between said first and second objects (2,3). A device manufacturing method comprising the steps of aligning said first and second object (2,3) using the method of claim 5 wherein said first object (2) is a mask and said second object (3) is a semiconductor wafer, and, after alignment of the mask (2) and the wafer (3), projecting a device pattern of the mask (2) onto the semiconductor wafer (3) to print the device pattern on the semiconductor wafer (3), and manufacturing a semiconductor device from the printed wafer (3). Apparatus for detecting a lateral relative position and a gap between a first object (2) and a second object (3) disposed opposed said first object (2) with a gap (gm) therebetween, said first object (2) having a first physical optical element (6) thereon and said second object (3) having a second physical optical element (7) thereon, each of said optical elements having an optical power, the apparatus further comprising light source means arranged to project light through said first optical element (6) onto said second optical element (7) to produce at a detection plane at least two spots of diffracted light (8,16,21,28,33,43, 108,116,127) of a diffraction order not lower than first order diffraction, which are displaceable along said detection plane in dependence upon at least the lateral relative position of said first and second objects (2,3); photodetecting means (4,5) for detecting said spots of light (8,16,21,28,33,43,108,116,127); and determination means (9,134,147) adapted to use the spacing between the first said spot of light (8,16,21,28,33,43,108,116,127) and the second spot of light (8,16,21,28,33,43,108,116,127) for determining the lateral relative position between said first and second objects (2,3), and the size of at least one of the first and second spots of light for determining the gap between said first and second objects (2,3). Apparatus as claimed in claim 7 wherein a third spot of light is produced at said detection plane, and said determination means (9,134,147) is adapted to determine the gap between said first and second objects (2,3) on the basis of the size of at least one of said first, second or third spots of light. Alignment apparatus for aligning a first object (2) with a second object (3) comprising the apparatus as claimed in claim 7 or claim 8; and alignment means (101) for adjusting the positional relationship and the gap between said first and second objects (2,3) to align said first and second objects (2,3). Device manufacturing apparatus comprising the alignment apparatus as claimed in claim 9 wherein said first object (2) is a mask and said second object (3) is a semiconductor wafer, and exposure means for projecting a device pattern of the mask (2) on to the semiconductor wafer (3) after alignment of the mask (2) and the semiconductor wafer (3) to print the device pattern on the semiconductor wafer (3).

Inventors: ABE NAOTO, NOSE NORIYUKI, ABE, NAOTO, NOSE, NORIYUKI
Applicants: CANON KK, CANON KABUSHIKI KAISHA
Application year: 1989
Main classification: G03F9
IPC codes: G03F9