Method of providing a semiconductor body on a support

Abstract: The invention relates to a method of providing a semiconductor body (3) on a support (1) with the interposition of a metal layer of aluminium (2). The adherence is effected in that the semiconductor body and the support are pressed against each other during the supply of heat at the area of the metal layer. The metal layer of aluminium is first applied to the support by flame spraying.

Description: The invention relates to a method of providing a semiconductor body on a support with the interposition of a metal layer of aluminium, in which the adherence is effected in that the semiconductor body and the support are pressed against each other during the supply of heat at the area of the metal layer. In such a method, an aluminium layer is provided on the support, mostly by a galvanic process or the like. A continuous smooth aluminium layer is then obtained. In order to promote the adherence between the semiconductor body and the support by means of the aluminium layer, this layer is provided with notches or the like, however, so that a favourable influence is exerted on the deformability of the aluminium layer when establishing the thermocompression bond between the semiconductor body and the support. If, for example, a semiconductor body must be provided on a support, as is in the case inter alia when providing pn emitters in electron tubes, an additional processing step is required for thus roughening the smooth aluminium layer. The invention has for its object to provide a method of the kind mentioned above, in which the disadvantage indicated above can be avoided. According to the invention, this can be achieved in that the metal layer of aluminium is applied to the support by flame spraying. When the aluminium layer is applied by means of flame spraying, a layer having an irregular surface will automatically be formed, as a result of which it is no longer necessary to roughen this surface by etching or notching or the like before the smiconductor body is provided. The invention will now be described more fully with reference to the accompanying Figures, which shows diagrammatically a support with a provided aluminium layer and a semiconductor to be provided thereon. The sole Figure shows diagrammatically a support 1, for example a cathode support. A metal layer 2 consisting of aluminium is applied to this support 1 by means of flame spraying. When such an aluminium layer 2 is applied by flame spraying, the outer appearance of this layer at its exposed surface automatically becomes rough. The unevennesses are shown in the Figure on an exaggerated scale for the sake of clarity. In order to secure a semiconductor body 3 on the support 1, this semiconductor body 3 can now be pressed in known manner against the aluminium layer 2 whilst supplying heat to this aluminium layer so that a so-called thermo-compression bond is then established. Due to the rough surface of the aluminium layer 2, this layer is sufficiently deformed so that a good adherence between the semiconductor body and the support is obtained without it being necessary for the aluminium layer to be subjected to an additional processing step beforehand after it has been applied to the support.

Claims: A method of providing a semiconductor body on a support with the interposition of a metal layer of aluminium, in which the adherence is effected in that the semiconductor body and the support are pressed against each other during the supply of heat at the area of the metal layer, characterized in that the metal layer of aluminium is applied to the support by flame spraying and in that the surface of the semiconductor body on which the support is pressed has no metal layer upon it.

Inventors: PETERS PETRUS JACOBUS MARIA, PETERS, PETRUS JACOBUS MARIA
Applicants: PHILIPS ELECTRONICS NV, PHILIPS ELECTRONICS N.V.
Application year: 1989
Main classification: H01L21
IPC codes: H01L23, H01L21