Insulating oxide composition used in a superconducting element

Abstract: An insulating composition consisting of Bi, Sr, RE, Cu, O or of Tl, Ba, RE, Cu, O (wherein; RE is an element selected from a group consisting of Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu and Y) aligns properly with a crystal face of an oxide superconductor because its crystal structure is the same as or similar to that of the oxide superconductor. An insulating composition in which a part of Bi is replaced by Pb is further near the oxide superconductor its construction, and the modulation structure in this insulating composition is mitigated or disappears.

Description: The present invention relates to an insulating composition used in a superconductive element. Recently, various experiments on oxide superconductors have been performed by many research groups since a laminate state perovskite type oxide of Ba-La-Cu-O series was represented to be possible to have a nature of high critical temperature (Z. Phys. B Condensed Matter 64, 189-193 (1986) ). Particularly, a defect-perovskite type oxide super conductor having oxygen defects represented by Y-Ba-Cu-O series has been confirmed to have a high critical temperature of 90 K or more which is a higher level than liquid nitrogen (Phys. Rev. Lett. Vol. 58, No.9, 908-910). Further, in 1988, a superconductive oxide of Bi-Sr-Ca-Cu-O series having a high critical temperature of 105 K was discovered (NIHON KEIZAI SHINBUN dated january 22, 1988, etc.). The superconductive oxide of Bi-Sr-Ca-Cu-O series is an excellent oxide superconductive material as compared with a superconductive oxide of Ba-La-Cu-O series or of Y-Ba-Cu-O series because it does not necessitate to use rare-earth elements of high cost and has high chemical stability against moisture as well as a high critical temperature. Now, the superconductive elements using the tunnel effect have been advanced to apply to digital devices such as logical elements, memory elements, etc. in computer because of its high speed operation and its low power consumption. Further, 4-bits multiplier, 3K gate array, etc. employing Nb/Aloxide/Nb junction, NbN/MgO/NbN junction, etc. have been manufactured in trial. Moreover, superconductive 3-terminal elements as superconductor - semiconductor element have been manufactured in trial. However, all these elements are composed of superconductor of low critical temperature and liquid helium is used as a cooling medium. Therefore, they are not practical yet in problems of development of peripheral technology economic, etc. Consequently, applications of an oxide superconductor having a high critical temperature to the above mentioned superconductive elements have been discussed. However, in case of making the above mentioned superconductive elements by oxide superconductor and insulating composition, a problem remains that electron levels are newly produced at the crystal interface between the oxide superconductive layer and the insulating composition, and electrons are trapped because of the poor alignment nature thereof, thereby injuring functions as a Josephson element. Therefore, predetermined characteristics are hardly obtained. Moreover, Bi₂Sr₂Ca₂Cu₃O₁₀ having the transition temperature of in the vicinity of 110 K and Bi₂Sr₂Ca₂Cu₂O₈ having the transition temperature of in the vicinity of 80 K have been known as Bi series superconductors. However, a problem remains a synthesis of Bi₂Sr₂CaCu₃O₁₀ having higher critical temperature is not easy. The reason is considered that the problem is based on a modulation structure existing in the b crystal axis direction of the Bi series superconductor or internal stresses which cause the modulation structure. It is one object of the present invention to provide an insulating composition which is stable and does not react with the crystal interface of the oxide superconductor during a heat treatment at high temperature. It is another object of the present invention to provide an insulating composition which has a good alignment with the crystal interface of the oxide superconductor. It is further another object of the present invention to provide an insulating composition in which the modulation structure is mitigated or disappears. According to the present invention, there is provided an insulating composition replacing Ca by RE; wherein, the Ca is a component of a superconductor composition consisting of Bi, Sr, Ca, Cu and O or of Tl, Ba, Ca, Cu and O, and the RE is an element selected from a group consisting of Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu and Y. Now, a small amount of Ca may remain. Here, the atomic ratio of Bi, Sr, RE, Cu and O or of T1, Ba, RE. In principle, 2 : X : Y : Z : 8+δ is 2 : 2 : 1 : 2 : 8+δ (δ: oxygen defect). However, a deviation such as 2 : X : Y : Z may be allowable: wherein; 1.5 ≦ X ≦ 2.5 0.5 ≦ Y ≦ 1.5 1.8 ≦ Z ≦ 2.5 Further, in the insulating composition of the present invention, a part of Bi may be replaced by Pb. The atomic ratio of Bi, Pb, Sr, RE, Cu, O is preferably 2-w : w : 2 : 1 : 2 : 8+δ. wherein O < w ≦ 1.5 δ is oxygen defect where preferably, w is represented by: 0.2 ≦ w ≦ 1.0 It is also preferred that the atomic ratio of Bi, Pb, Sr, RE, Cu, O is 2-w : w : 2 : 2 : 3 : 10+δ wherein: O < w ≦ 1.5 δ is oxygen defect where preferably, w is represented by: 0.2 ≦ w ≦ 1.0 The insulating composition of the present invention may be employed as an insulating material of an insulating layer, substrate, etc. of the superconductive devices. A case in which the insulating composition of the present invention is used in the insulating layer of the superconductive element will be explained. The insulating composition can be made by mixing carbonate, oxide, and organic acid salt, etc. of Bi, Sr, RE, Cu, etc. in the stoichiometric ratio, and sintering it at a temperature ranging from 800°C to 900°C. Now, the combination ratio of raw materials is not necessary in the strict stoichiometric ratio, and about 10 % difference is allowable. Moreover, the reaction temperature can be reduced by adding a minute amount of alkali metal compound. For example, a Josephson element of tunnelling junction type can be obtained by laminating in sequence an oxide superconductive layer, an insulating layer and an oxide superconductive layer on a substrate through a physical deposition method such as vacuum evaporation method, magnetron sputtering method, ion beam sputter method, cluster ion beam method and molecular beam epitaxy method, or a chemical vapour deposition method such as CVD method and plasma CVD method. Further, the oxide superconductor and the insulating composition can be formed through a multi-evaporation method or a multi-sputter method using every metal elements constituting them as evaporation sources or sputtering sources. When the oxide superconductor consists of Bi, Sr, Ca, Cu and O and the insulating layer consists of Bi, Sr, RE, Cu and O, the workability becomes good because the change of forming the oxide superconductive layer and forming the insulating layer can be conducted by replacing only one element. Preferably, the thickness of the oxide superconductive layer is 10⁻²µm (100 Å) or more so that it represents superconductor characteristics and the thickness of the insulating layer ranges from 5 x 10⁻²µm to 2 x 10⁻²µm (50 Å to 200 Å) so that it does not disturb the tunnel effect. Further, after forming respective the material layers, a heat treatment may be conducted at a temperature of 400° to 600°C under oxygen atmosphere, if necessary, so that the superconductor characteristics are enhanced by introducing oxygen into oxygen defects of the oxide superconductor. By the same manner, a superconductive 3-terminal element, a high sensitive magnetic sensor, etc. may be formed. When the insulating composition of the present invention is used as a substrate of the superconductive element, the monocrystalline substrate is grown by conventional flux method, FZ (Floating Zone) method or kiln-process method. The monocrystalline substrate containing Bi, Sr, RE, Cu and O in an atomic ratio of 2 : X : Y : Z : 8 + δ 1.5 ≦ X ≦ 2.5 0.5 ≦ Y ≦ 1.5 1.8 ≦ Z ≦ 2.5 δ: oxygen defect is formed by the self-flux method. Bi₂O₃ and CuO may be contained simultaneously as the flux using. In this case it may satisfy a follwing formula in mol ratio (β,γ,ε) of the composition of respective positive ions; βBi₂O₃ + γ[ (Sr.RE) O ] + εCuO wherein; 5 ≦ β ≦ 25 20 ≦ γ ≦ 60 10 ≦ ε ≦ 60 2β + γ + ε = 100 The mixture is melted in a crucible and cooled to produce a monocrystalline structure having a composition of Bi₂Sr x RE Y Cu z O 8+δ . Next, actions and effects of the present invention will be explained. The insulating composition of the present invention has a lattice structure the same as or similar to that of the oxide superconductor, and the lattice constant is also extremely similar. Therefore, the alignment at the interface can be good and the deterioration of the characteristic by electron trapping can be suppressed. Particularly, when the insulating composition is used as a substrate, because of identical or similar crystal structures to each other, a monocrystalline thin film of oxide super conductor can be epitaxially grown on the substrate. Further, the insulating composition of the present invention is stable at a heat treatment of high temperature and does not react with the lattice face of the oxide superconductor. Therefore, by employing a superconductive element made of the insulating composition of the present invention as an insulating material, IC, transistor, high sensitive magnetic sensor, etc. of super high speed operation and low power consumption can be manufactured. Furthermore, the insulating composition of the present invention can be further near its lattice constant to that of Bi series superconductor if a part of Bi is replaced by Pb. Moreover, the modulation structure of the insulating composition according to the present invention can be mitigated or disappear. When Bi series superconductive thin film is grown on the monocrystalline of the insulating composition according to the present invention, Bi₂Sr₂Ca₂Cu₃O₁₀ layer having a high critical temperature can be easily obtained. The reason is considered that the modulation structure is mitigated or disappears in the insulating composition of the present invention, and in the superconductive thin film also the modulation structure is mitigated and disappears. Further, in the superconductive thin film thus obtained, a superconductive transition in a sharp figure can be obtained by the same reason, and therefore, increasing of a critical current at 77 K was confirmed. That is, by using the insulating composition of the present invention in a superconductive element as an insulating material, a good superconductive element representing a sharp transition at 110 K can be easily obtained. Although the explanation was concerned with Bi series, Tl series also represents the same crystal structure, action and effect as the Bi series, as a matter of course. Fig. 1 is a cross-sectional view showing an oxide superconductive element using an insulating composition of the present invention as an insulating layer; Fig. 2 is a diagram showing electronic resistivity characteristics with respect to every temperature, in a monocrystalline oxide superconductive thin film grown on a monocrystalline substrate according to the present invention; and Fig. 3 is a diagram showing characteristics of an insulating composition according to the present invention in the case of replacing a part of Bi by Pb. Hereinafter embodiments of the present invention will be explained. Example 1 Fig. 1 is a cross-sectional view showing an oxide superconductive element of tunnel junction type using an insulating composition of the present invention as an insulating layer, and in the drawing, the oxide superconductive element 1 is formed on the substrate 2 and is constituted by laminating Bi₂Sr₂Ca₁Cu₂O 8+δ layer 3, Bi₂Sr₂Y₁Cu₂O 8+δ layer 4 and Bi₂Sr₂Ca₁Cu₂O 8+δ layer 5 in sequence. (method of manufacturing Bi₂Sr₂Ca₁Cu₂O 8+δ target) At first, Bi₂O₃ powder of 33.5 mol %, SrCO₃ powder of 33.5 mol %, CaCO₃ powder or 33.5 mol % and CuO powder or 16.7 mol % are mixed in a monopot with zirconia balls and subject to wet grinding, and after drying for removing water, a heat treatment for pre-sintering (850°C to 900°C, 24 hours) is conducted. Thereafter, a wet grinding is conducted again in a monopot, and after drying for removing water, powders (superconductor) of 5 µm or less in grain size are obtained. Next, a granulation material is adjusted by adding polyvinylalcohol to the raw powders mentioned above, and a disc of 154 mm diameter and 6.5 mm thickness is formed through process steps of filling the granulation material into a metal mold and forming under 9.81 x 10⁷ Pa (1000 Kg/cm²). Next, by sintering it under oxygen atmosphere at 840°C during 24 hours, a target material of oxide superconductor having 98 % sintering density and represented by Bi₂Sr₂Ca₁Cu₂O 8+δ is obtained. (method of manufacturing Bi₂Sr₂Y₁Cu₂O 8+δ target) A disc represented by Bi₂Sr₂Y₁Cu₂O 8+δ and having 154 mm diameter, 6.5 mm thickness and sintering density of 98 % is obtained by the same method as the above mentioned method except replacing the CaCO₃ powders mentioned above by Y₂O₃ powders. (method or manufacturing an oxide superconductive element (Josephson element) ) Bi₂Sr₂Ca₁Cu₂O 8+δ layer having 1.0 um thickness is formed on a SrTiO substrate of 10 x 10 x 1 mm shape while maintaining the substrate temperature at 700°C through RF magnetron sputtering method under 7 Pa pressure or mixture gas consisting or argon of 95 mol % and oxygen of 5 mol % by using Bi₂Sr₂Ca₁Cu₂O 8+δ target. Next, a Bi₂Sr₂Ca₁Cu₂O 8+δ having 10⁻³um (10 Å) thickness is formed on the Bi₂Sr₂Ca₁Cu₂O 8+δ layer by using a Bi₂Sr₂Y₁Cu₂O 8+δ target. Finally, a Bi₂Sr₂Ca₁Cu₂O 8+δ layer having 1.0 um thickness is formed on the Bi₂Sr₂Y₁Cu₂O 8+δ layer by the same conditions as above mentioned conditions, thereby obtaining an oxide superconductive element of tunnel junction type. The oxide superconductive element thus constructed has the critical temperature of 77 K and was confirmed to flow the current through respective layers by tunnel effect at the temperature. An oxide superconductive element is formed by the same manner as mentioned above except forming a Tl₂Ba₂Y₁Cu₂O 8+δ layer as the insulating layer using a Tl₂Ba₂Y₁Cu₂O 8+δ layer Tl₂Ba₂Ca₁Cu₂O 8+δ layer as the super conductor using a Tl₂Ba₂Ca₁Cu₂O 8+δ target, and it was confirmed to operate at the critical temperature of 100 K. Example 2 The same oxide superconductor element as Example 1 except forming Bi₂Sr₂Ca₂Cu₃O 10+δ layer in place of Bi₂Sr₂Ca₁Cu₂O 8+δ layer 3, 5 by using Bi₂Sr₂Ca₂Cu₃O 10+δ target in place of Bi₂Sr₂Ca₁Cu₂O 8+δ target was manufactured. A current gas confirmed to flow through respective layers by tunnel effect at the critical temperature or 70 K of the oxide supperconductor element. Comparison Example 1 An oxide superconductive element having the same structure as Example 1 except, in place of Bi₂Sr₂Y₁Cu₂O 8+δ layer 4 in Example 1, forming an A1₂O₃ layer of the same thickness was manufactured. However, the element did not operate at the critical temperature of 77 K. Although, in the above mentioned examples, an example using an nonconductive oxide consisting of Bi₂Sr₂Y₁Cu₂O 8+δ as an insulating layer was explained, the same effect can be obtained in a case that an oxide in which Y in the formula mentioned above is replaced by Nd, Sm, Cd, Tb, Dy, Ho, Er, Tm, Yb or Lu is used because the construction has the same crystal structure. Example 3 A monocrystalline Bi₂Sr₂YCu₂O 8+δ of 20mm x 20mm x 2mm configuration is produced by a method including the steps of weighing raw powders or Bi₂O₃, SrCO₃, Y₂O₃, CuO by a balance of 100g weighing so that the atomic ratio of Bi:Sr:Y:Cu is 3:2:1:3, mixing them, putting in an alumina crucible, keeping at 1150 °C for 24 hours under atmosphere, thereafter cooling gradually to 800°C by taking 100 hours, and cooling to room temperature. The specimen was confirmed to be monocrystalline and to have (001) facets by an X-ray diffraction method. An oxide superconductive monocrystalline film having an aligned direction with the substrate was obtained by Bi₂Sr₂CaCu₂O 8+δ film formed on this substrate mentioned above through an RF sputter method keeping the substrate temperature at 550°C. The reaction between the substrate and the film was within measuring limit when the section of the film was analyzed by EPMA. Fig. 2 shows temperature characteristics of electric resistivity. Excellent superconductivity characteristics were obtained such as Tc = 84K, +/- 1 K. Comparison Example 2 A film was formed by the same conditions as in the Example 3 except using a MgO monocrystalline as the substrate. The film was of C face oriented, however, it was a polycrystalline having the orientation degree of about 70 % and having large concavities and convexities at its surface, and MgO ions were detected within the film by EPMA analysis on the film section. Example 4 A monocrystalline of Bi₂Sr₂Nd₂Cu₃O 10+δ having 10mm x 10mm x 1mm size was forced by weighting Bi, Sr, Nd, Cu to 4:2:2:5 in the atomic ratio in this order and growing monocrystalline in the same manner as in Example 3, and it was confirmed to be monocrystalline and to have (001) facets by an X-ray diffraction method. When Bi₂Sr₂Ca₂Cu₃O 10+δ film was formed on the substrate by a cluster ion beam method at a substrate temperature of 450°C, an oxide superconductive monocrystalline film aligning its direction with the substrate was obtained. Example 5 Each powders of Bi₂O₃, PbO, SrCO₃, Y₂O₃ and CuO where weighed so that the atomic ratio of Bi:Pb:Sr:Y:Cu was 1:1:2:1:2. Further, Bi₂O₃ and CuO were added to the above mixture so that the atomic ratio was 1:1, and the resulting mixture was well mixed. Next, the mixture was put in an alumina crucible, heated to 1150 °C under atmosphere, melted uniformly by keeping it at this temperature, thereafter cooled gradually to 800 °C by taking 100 hours during 24 hours and then cooled to room temperature. The large monocrystalline of 10mm x 20mm x 2mm was formed in the obtained cooled solid material. By a X-ray diffraction method, this monocrystalline was found to be BiPbSr₂Y₁Cu₂O 8+δ (δ denotes oxygen defect) and of C face oriented to monocrystalline face. As the electric resistivity was 10⁴ Ω·cm at -100 °C, it was found to be able to use an insulating material. On the substrate of the aboved BiPbSr₂Y₁Cu₂O 8+δ monocrystalline, Bi series oxide superconductor film having 2 x 10⁻²µm (200 Å) thickness was formed through multi-sputtering method of RF magnetron sputtering under 7 Pa pressure of mixture gas consisting or argon of 95 mol % and oxygen Of 5 mol % by using Bi₂O₃, PbO, SrCO₃, CaCO₃ and CuO as sputtering target. The electric power for each sputtering target was controlled so that the compositon of the formed film was Bi:Sr:Ca:Cu=2:2:2:3. By the X-ray diffraction method, the obtained Bi series oxide superconductor film was found to be an epitaxially grown film aligning its direction with the substrate. Further, on the above Bi series oxide superconductor film formed on the insulating monocrystalline substrate, BiPbSr₂Y₁Cu₂O 8+δ film having thickness 5 x 10⁻³ µm (50 Å) was formed through multi-sputtering method of RF magnetron sputtering by using Bi₂O₃, PbO, SrCO₃, Y₂O₃ and CuO in the sputtering target. Thereafter, on the obtained film, Bi series oxide superconductor film having thickness 2x10⁻²µm (200 Å) was formed in the above manner to manufacture a Josephson element. The element represented the superconductive characteristics at the transition temperature of 110 K and a good Josephson effect. Comparison Example 3 A Josephson element was manufactured by using SrTiO₃ as the substrate, and by laminating Bi₂Sr₂Ca₂Cu₃O 10+δ superconductor of 2 x 10⁻² µm (200 Å), MgO of 5 x 10⁻³um (50 Å) as the insulating layer and Bi₂Sr₂Ca₂Cu₃O 10+δ superconductor of 2 x 10⁻² µm (200 Å) in sequence on the substrate. However, a superconductive characteristic was not represented at this state. Therefore, a heat treatment was conducted for improving the crystal condition, and then, the superconductive characteristics were estimated. As a result, the superconductive state was represented at the transition temperature of 60 K, but a good Josephson characteristic was not obtained. Example 6 As the manufacturing method showed in Example 5, monocrystalline of Bi 2-w Pb w Sr₂YCu₂O 8+δ was obtained. Fig. 3 shows lattice constants in Bi 2-w Pb w Sr₂YCu₂O 8+δ crystal and Bi₂Sr₂CaCu₂O 8+δ superconductor, and modulation structure in Bi 2-w Pb w Sr₂YCu₂O 8+δ crystal. In the drawing, the horizontal axis denotes W. That is, with increasing W, the ratio of replacing Bi by Pb is increased. The vertical axis at the left-upper side denotes lattice constant of c axis, and the vertical axis at the right-lower side denotes the lattice constants of a and b axis. The vertical axis at the right-upper side denotes the modulation structure. ○ signs denote lattice constant at a axis in Bi 2-w Pb w Sr₂YCu₂O 8+δ crystal;  signs denote the lattice constant at b axis; and □ signs denote the lattice constant at c axis. O ○ signs denote the lattice constants at the a axis and b axis in Bi₂Sr₂CaCu₂O 8+δ and signs denote lattice constant at c axis. ▵ signs denote the modulation structure in Bi₂Sr₂CaCu₂O 8+δ crystal. It can be recognized that, in Bi 2-w Pb w Sr₂YCu₂O 8+δ crystal, the lattice constant at the b axis is nearest Bi₂Sr₂CaCu₂O 8+δ in case of replacing about 30% of Bi by Pb, and c axis is nearest Bi₂Sr₂CaCu₂O 8+δ in case of increasing the replacement ratio or Bi by Pb. Further, when the replacement of Bi with Pb is increased, the modulation structure disappears. Examples 7 to 16 Insulative monocrystallines were manufactured through flux methods in accordance to compositions shown in table 1 and table 2. Example Bi₂O₃ mol % SrCO₃ mol % Y₂O₃ mol % CuO mol % cooling speed size of monocrystalline (mm³) 7 20.00 16.67 6.67 35.00 10°C/h 10 x 15 x 2 8 15.00 26.67 6.67 30.00 30°C/h 14 x 20 x 2 9 15.00 26.67 6.67 30.00 10°C/h 18 x 20 x 2 10 15.00 26.67 6.67 30.00 1°C/h 18 x 20 x 2 11 22.50 26.67 6.67 15.00 10°C/h 14 x 18 x 2 12 7.50 36.67 9.17 30.00 10°C/h 10 x 15 x 2 13 7.50 20.00 5.00 55.00 10°C/h 10 x 14 x 2 Example Bi₂O₃ mol % SrCO₃ mol % Nd₂O₃ mol % CuO mol % cooling speed size of monocrystalline (mm³) 14 15.00 26.67 6.67 30.00 30°C/h 10 x 15 x 1 15 15.00 26.67 6.67 30.00 10°C/h 12 x 15 x 1 16 15.00 26.67 6.67 30.00 1°C/h 12 x 14 x 1

Claims: An insulating composition characterized in that Ca in an oxide superconductive composition consisting of Bi, Sr, Ca, Cu and O or of T1, Ba, Ca, Cu and O is replaced by RE; wherein RE is an element selected from a group consisting of Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Ym, Yb, Lu and Y. An insulating composition of Claim 1, characterized in that the atomic ratio of Bi, Sr, RE, Cu and O or of T1, Ba, RE, Cu and O is 2 : X : Y : Z : 8 + δ wherein: 1.5 ≦ X ≦ 2.5 0.5 ≦ Y ≦ 1.5 1.8 ≦ Z ≦ 2.5 δ : oxygen defect A method of forming an insulating composition including Bi, Sr, RE, Cu and O by the atomic ratio of 2 : X : Y : Z : 8 + δ ; wherein: 1.5 ≦ X ≦ 2.5 0.5 ≦ Y ≦ 1.5 1.8 ≦ Z ≦ 2.5 δ: oxygen defect RE: an element selected from the group consisting of Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Ym, Yb, Lu and Y, characterized in that flux including Bi₂O₃ and CuO is used on a flux method. A method of forming an insulating composition including Bi, Sr, RE, Cu and O by the atomic ratio of 2: X : Y : Z : 8 + δ , wherein: 1.5 ≦ X ≦ 2.5 0.5 ≦ Y ≦ 1.5 1.8 ≦ Z ≦ 2.5 δ: oxygen defect RE: an element selected from the group consisting of Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Ym, Yb, Lu, and Y, characterized in that the composition of positive ions in respective raw materials of Bi, Sr, RE, Cu maintains a following formula on a flux method: βBi₂O₃ + γ{( Sr.RE ) O} + εCuO, in mol ratio % (β,γ,ε) wherein: 5 ≦ β ≦ 25 20 ≦ γ ≦ 60 10 ≦ ε ≦ 60 2β + γ + ε = 100 An insulating composition of Claim 1 characterized in that a part of Bi is replaced by Pb. An insulating composition of Claim 5 characterized in that the atomic ratio of Bi, Pb, Sr, RE, Cu, O is 2-W : W : 2 : 1 : 2 : 8+δ. wherein: O < W ≦ 1.5 δ is oxygen defect An insulating composition of Claim 6 characterized in that W is represented by: 0.2 ≦ W ≦ 1.0 An insulating composition of Claim 5 characterized in that the atomic ratio of Bi, Pb, Sr, RE, Cu, O is 2-W : W : 2 : 2 : 3 : 10+δ. wherein: O < W ≦ 1.5 δ is oxygen defect An insulating composition of Claim 8 characterized in that W is represented by: 0.2 ≦ W ≦ 1.0 A superconductive element characterized in that on an oxide superconductor is formed said oxide insulating composition as claimed in Claim 1 as an insulating layer. A superconductive element characterized in that an oxide superconductor is formed on said insulating composition as claimed in Claim 1 layered on a substrate. A superconductive element comprising, an oxide insulating layer and an oxide superconductor layer formed on the insulating layer, wherein the insulating layer consists essentially of an oxide having a crystal structure which is the same as that of the oxide superconductor and is of a composition characterized in that Ca in an oxide superconductive composition essentially consisting of Bi, Sr, Ca, Cu, and O or of Tl. Ba, Ca, Cu and O is replaced by RE; wherein RE is an element selected from the group consisting of Nd, Sm, Eu, Gd, Tb. Dy, Ho, Er, Tm, Yb, Lu and Y. A superconductive element of claim 12, wherein the insulating layer is a substrate. A superconductive element of Claim 12, wherein the insulating layer forms a junction with the superconductor layer. A superconductive element of Claim 12, wherein the element is a Josephson element. A superconductive element of Claim 12, wherein the superconductor layer is an epitaxial layer grown on the insulating layer. A superconductive element of Claim 12, wherein the insulating layer is of a partially modified composition of the superconductive layer. A superconductive element of Claim 12, wherein the composition of the insulating layer is characterized in that an atomic ratio of Bi, Sr, RE, Cu and O or of Tl, Ba, RE, Cu and O is 2 : x : y : z : 8+δ, wherein 1.5 ≦ x ≦ 2.5 0.5 ≦ y ≦ 1.5 1.8 ≦ z ≦ 2.5 δ : oxygen defect. A superconductive element of Claim 12, the composition of the insulating layer is characterized in that a part of Bi is replaced by Pb. A superconductive element of Claim 19, wherein the composition of the insulating layer is characterized in that the atomic ratio of Bi, Pb, Sr, RE, Cu, O is 2-w : w : 2 : 1 : 2 : 8+δ; wherein O < w ≦ 1.5 δ is oxygen defect. A superconductive element of Claim 20, wherein the composition of the insulating layer is characterized in that w is represented by: 0.2 ≦ w ≦ 1.0. A superconductive element of Claim 19, wherein the composition of the insulating layer is characterized in that the atomic ratio of Bi, Pb, Sr, RE, Cu, O is 2-w : w : 2 : 2 : 3 : 10+δ: wherein O < w ≦ 1.5 δ is oxygen defect. A superconductive element of Claim 22, wherein the composition of the insulating layer is characterized in that w is represented by: 0.2 ≦ w ≦ 1.0.

Inventors: ANDO KEN C O PATENT DIVISION, FUKUSHIMA NOBURU C O PATENT DI, NIU HIROMI C O PATENT DIVISION, NOMURA SHUNJI C O PATENT DIVIS, YAMASHITA TOMOHISA C O PATENT, YOSHINO HISASHI C O PATENT DIV, ANDO, KEN C/O PATENT DIVISION, FUKUSHIMA, NOBURU C/O PATENT DIVISION, NIU, HIROMI C/O PATENT DIVISION, NOMURA, SHUNJI C/O PATENT DIVISION, YAMASHITA, TOMOHISA C/O PATENT DIVISION, YOSHINO, HISASHI C/O PATENT DIVISION
Applicants: TOSHIBA KK, KABUSHIKI KAISHA TOSHIBA
Application year: 1989
Main classification: C04B35
IPC codes: H01L39, C04B35, B32B18