Magnetoresistive read transducer and a method for making it

Abstract: A magnetoresistive (MR) read transducer comprising an anti­ ferromagnetic layer (14) in direct contact with an MR layer (12) is subjected to a thermal annealing process so that a ternary antiferromagnetic alloy is formed at the interface by diffusion. The ternary antiferromagnetic alloy has a high value of exchange bias which is less temperature sensitive. In a specific embodiment in which the MR layer is NiFe and the antiferromagnetic layer is FeMn, the ternary alloy formed by heating the structure to a temperature within the range of 260°C to 350°C for 50 to 20 hours has a room temperature exchange bias field with NiFe of about 0.65 Amp/metre (50 Oersted) and an ordering temperature which exceeds 300°C.

Description: This invention relates to a magnetoresistive read transducer for reading information signals from a magnetic medium and to a method for making such a transducer. Known magnetoresistive (MR) sensors or heads have been shown to be capable of reading data from a magnetic surface at great linear densities. An MR sensor detects magnetic field signals through the resistance changes of a read element made from a magnetoresistive material as a function of the amount and direction of magnetic flux being sensed by the element. It is also known that in order for a MR sensor to operate optimally, two bias fields should be provided. In order to bias the material so that its response to a flux field is linear, a transverse bias field is generally provided. This bias field is normal to the plane of the magnetic media and parallel to the surface of the planar MR sensor. The other bias field which is usually employed with MR sensors is known as the longitudinal bias field, which extends parallel to the surface of the magnetic media and parallel to the lengthwise direction of the MR sensor. The function of the longitudinal bias field is to suppress Barkhausen noise, which originates from multi-domain activities in the MR sensor. U.S.-A- 4,103,315 describes a MR read sensor which utilizes antiferromagnetic-ferromagnetic exchange coupling to produce a uniform longitudinal bias in the MR layer of the sensor. The materials suggested in this prior document are nickel-iron (NiFe) as the ferromagnetic MR layer and a manganese (Mn) alloy as the antiferromagnetic layer. Of the possible Mn alloys, iron-manganese (FeMn) appears to exhibit the greatest ability to exchange couple with the NiFe layer, and the FEMn is deposited directly on the NiFe to obtain the exchange bias effect. The strength of the exchange bias field for exchange coupled films of sputter deposited NiFe and FeMn films has been studies by Tsang et al in "Exchange Induced Unidirectional Anisotropy at FeMn-Ni₈₀Fe₂₀ Interfaces", J Appl Phys Vol 52(3), March 1981, pp 2471-2473. The use of annealing between Mn and NiFe to obtain an antiferromagnetic alloy of high ordering temperature (250°C) was described by Massenet et al in "Magnetic Properties of Multilayer Films of FeHi-Mn-FeNiCo and of FeNi-Mn", IEEE Tran on Mag MAG-1, March 1965, P 63. In one particular example, annealing took place at 300°C for 15 hours, followed by slow cooling to room temperature. In the publication "Spin-Wave Resonance in Epitaxial Fe-Ne Films and in Coupled Double Layers of Epitaxial Fe-Ni & Fe-Ni-Mn", Waksmann et al, Journal of Applied Physics V39, No 2, February 1968, p 1389, the authors directly evaporated an Ni-Fe-Mn ternary (around the ordered Ni₅₀Mn₅₀ region) onto NiFe, and obtained exchange bias which was fairly low (0.88 Amp/metre (7 Oe.) at 40 nm NiFe) but an ordering temperature which was high (250°C). The teachings of the prior art have enabled the design of MR sensors which meet prior art requirements. However, the drive towards increased recording density has led to the requirement for narrower recording tracks and increased linear recording density along the tracks. The small MR sensors which are necessary to meet these requirements cannot be made with the use of the prior art techniques due to the low magnitude of the exchange bias field that can be obtained, the pronounced temperature dependence of the magnitude of the exchange bias field, and the low ordering temperature at which the exchange bias field goes to zero. This invention seeks to increase the exchange bias magnitude and reduce its temperature dependence in a magnetoresistive (MR) read transducer. According to one aspect, the present invention provides a method for making a magnetoresistive read transducer assembly according to claim 1. According to another aspect, the present invention provides a magnetoresistive read transducer assembly according to claim 7. In a specific embodiment the MR layer comprises NiFe and the layer of antiferromagnetic material comprises FeMn. Typical anneal temperatures employed were within the range of 260 to 350 degrees centigrade. How the invention can be carried out will now be described by way of example, with reference to the accompanying drawings, in which:- Fig. 1 is an end view of a specific magnetoresistive read transducer assembly embodying the invention; Fig. 2 is a graph of exchange bias field H UA as a function of temperature for as-deposited NiFe/FeMn films; Fig. 3 is a graph of exchange bias field H UA as a function of temperature for NiFe/FeMn films annealed for 7 cycles at 245°C plus 5 cycles at 260°C; Fig. 4 is a graph of exchange bias field H UA as a function of temperature for NiFe/FeMn films annealed for 7 cycles at 245°C followed by continuous annealing for 19 hours at 260°C; Fig. 5 is a graph of exchange bias field H UA as a function of temperature for NiFe/FeMn films annealed for 3 cycles at 240°C followed by continuous annealing for 41 hours at 260°C; and Fig. 6 is a graph of exchange bias field H UA as a function of temperature for NiFe/FeMn films annealed continuously for 60 hours at 260°C. A magnetoresistive (MR) sensor 10 (Fig. 1) comprises a thin MR layer of ferromagnetic material 12. A thin layer of a suitable antiferromagnetic material 14 is deposited on the MR layer 12 with good interfacial atomic contact. A resultant unidirectional anisotropy develops by means of exchange coupling across the interface between the MR layer 12 and the antiferromagnetic layer 14 and produces a shift of the MH loop of the MR layer which is usually called the longitudinal exchange bias field H UA . The transverse bias is produced by a soft magnetic film layer 16 which is separated from the MR layer 12 by a thin nonmagnetic spacer layer 18 whose purpose is to prevent a magnetic exchange bias between the MR layer 12 and the soft magnetic bias layer 16. Conductor leads 20, 22 are also included for connection to a sensing means (not shown) for sensing an output signal as is known in the art. The preferred material for the MR layer 12 is NiFe, and the preferred material for the antiferromagnetic layer 14 is MnFe. The exchange bias effect renders the NiFe/FeMn couple useful in magnetic recording for the suppression of domain induced Barkhausen noise in small MR sensors. To do this, the direction of the exchange bias is usually oriented along the length of the MR sensor to induce a longitudinal directional preference for the magnetization of the MR sensor, while signal fields excite the sensor orthogonally, along the transverse direction. To be effective, the magnitude of this longitudinal exchange bias, H UA , must exceed a certain minimum to counteract demagnetization in the MR geometry and coercivity effects in the MR material. Since the exchange bias magnitude of the NiFe/FeMn couple exhibits rather pronounced temperature dependences, with H UA decreasing linearly towards zero at the ordering temperature, it is important that at the device operating temperature of the MR sensor (usually above room temperature), H UA is still large enough to be effective for domain suppression. In a specific embodiment, the MR layer 12 was deposited as a layer of NiFe about 40 nm thick, the antiferromagnetic layer 14 was deposited as a layer of MnFe about 50 nm thick, and a capping layer (not shown) comprising successive layers of tantalum, NiFe and tantalum was deposited over the MnFe layer to prevent oxidation of the MnFe layer. The exchange bias H UA magnitude and its variation with temperature is shown in Fig. 2. Referring to Fig. 2, it can be seen that the exchange bias field H UA obtained is around 1671 Amp/metre (21 Oe.) at room temperature (25°C), which is more than adequate for most MR geometries. However, it can also be seen that the exchange bias field decreases linearly toward zero at the critical ordering temperature, T cr , of around 160°C. Therefore, at the maximum device operating temperature, which may be as high as 90°C, for example, the amount of H UA available is significantly reduced to about 796 Amp/metre (10 Oe.), which may be close to the minimum threshold requirement, depending on the particular MR sensor design. To improve upon the as-deposited magnitude of H UA as shown in Fig. 2, it is desirable to increase not only the room temperature magnitude of the exchange bias but also to alter the H UA (T) dependence so that the magnitude of the exchange bias is also sufficiently high at the maximum device operating temperature. According to the present invention, both the magnitude of the exchange bias field H UA and the temperature dependence of the magnitude of the exchange bias field are improved by means of thermal annealing procedures. Thermal annealing was done in one of two ways. In the first annealing procedure, films were annealed in cycles consisting of 3-4 hours to reach anneal temperature, 3-4 hours at the preset anneal temperature, and 12 hours to cool. These films were first annealed at 245°C for up to seven cycles, then at 260°C for up to five cycles. In the second annealing procedure, the films were annealed continuously at 270°C for up to 60 hours. These annealing times include the 3-4 hours to reach temperature. The MH loops and temperature dependence of the exchange bias, H UA (T), were measured before and after each annealing step, and Auger compositional analysis were performed to correlate magnetic behavior to composition changes. The resultant H UA (T) for the films after 7 cycles at 245°C plus 5 cycles at 260°C is shown in Fig. 3. This plot shows that the room temperature value has increased slightly, that the shape of H UA (T) is now convex instead of linear, and that the ordering temperature T CR has increased to about 180°C. These results suggest that, with moderate annealing, the uniformity of exchange conditions at the interface is improved, so that the couple is now a better approximation to the ideal case of a sharp and uniform interface, which would have a Brillioun function H UA (T) going to zero at the Neel temperature of FeMn (around 240°C). The plot in Fig. 4 shows H UA (T) with the previous heat treatment plus 19 hours of continuous annealing at 260°C. The curve has become more convex, but the ordering temperature T CR has not changed much, remaining around 180°C. The plot in Fig. 5 shows H UA (T) for a thermal annealing treatment of 3 cycles at 240°C plus 41 hours of continuous annealing at 260°C. Here the room temperature value of H UA has increased to about 3183 Amp/metre (40 Oe.), and the shape of H UA (T) has changed once more so that it is convex at lower temperatures (below about 150°C) and becomes almost linear again at higher temperatures. The ordering temperature has increased substantially to about 300°C. Since H UA has now shifted to a temperature exceeding 240°C, the Neel temperature of FeMn, it must be concluded that now the NiFe is exchange coupled to a different antiferromagnet characterised by a stronger antiferromagnetic order. In addition, the reappearance of linear behavior in H UA (T) suggests that the conversion of FeMn antiferromagnetism at the interface into this new antiferromagnetic system may be very non-uniform, forming a series of intermediate alloys along the exchange path at the interface. The plot in Fig. 6 shows H UA (T) for a thermal annealing treatment of 60 hours of continuous annealing at 260°C. In this case the room temperature value of H UA reaches about 3979 Amp/metre (50 Oe.), the shape of H UA (T) becomes more convex at lower temperatures, and is still essentially linear at higher temperatures. The ordering temperature now exceeds 300°C. With extended annealing, a change of the antiferromagnet exchange coupling to the NiFe has occurred. This change is due to interdiffusion which has converted the FeMn near the interface into another alloy that exhibits very high Neel temperatures and strong exchange bias effects. A likely candidate for the new alloy is the antiferromagnetic ordered MnNi-type alloys, which exhibit Neel temperatures as high as 800°C around the 50:50 MnNi composition. Auger analysis of the annealed structures indicates that only a partially ordered or even disordered form of these alloys has been formed in the results described here, so the resultant Neel temperatures were significantly reduced from 800°C, but were still substantially higher than that for FeMn. The results of our Auger composition analysis indicates that the alloy composition was approximately Ni₄₀ Mn₄₀ Fe₂₀ for a specific embodiment. We have, through extended annealing, and the resulting interdiffusion, created a series of NiFeMn ternary alloys in the NiMn antiferromagnetic regime. There are other types of thermal treatments which can accomplish the same objectives as the specific examples given here. For example, the temperature for the continuous annealing for a specified time can be increased to the level of about 350°C without adverse effects on the MR sensor. At these higher temperatures, less time is required to achieve the same thermal annealing effect. It is also possible that the same effect can be achieved by a higher temperature for a shorter time by the use of techniques such as laser annealing or flash annealing.

Claims: A method for making a magnetoresistive read transducer assembly comprising the steps of: depositing a thin layer of antiferromagnetic material in direct contact with a thin magnetoresistive layer of ferromagnetic material to form a layered structure; heating the layered structure to a preset anneal temperature; and annealing the layered structure at the preset anneal temperature so as to produce an antiferromagnetic material at the interface between said magnetoresistive layer and said layer of antiferromagnetic material; the method being characterised in that: the annealing step is performed for an extended period of at least 35 hours to produce a ternary antiferromagnetic material; the extended period of annealing being such that the ternary antiferromagnetic material produces a high exchange bias field with said magnetoresistive layer and said ternary antiferromagnetic material exhibits an ordering temperature exceeding 300 degrees centigrade. A method as claimed in Claim 1 wherein the extended annealing period is comprised of a number of shorter anneal periods. A method as claimed in Claim 1 or Claim 2, wherein said ferromagnetic material comprises an allow of nickel and iron and said antiferromagnetic material comprises an alloy of iron and manganese. A method as claimed in any of Claims 1 to 3, wherein said preset anneal temperature is within the range of 260 to 350 degrees centigrade. A method as claimed in Claim 3 or Claim 4, wherein said ternary antiferromagnetic material is an alloy comprising nickel, iron and manganese. A method as claimed in Claim 5, wherein the ternary antiferromagnetic material is Ni₄₀Mn₄₀Fe₂₀. A magnetoresistive read transducer assembly comprising: a thin magnetoresistive layer (12) of ferromagnetic material; a thin layer (14) of antiferromagnetic material in direct contact with the magnetoresistive layer; an antiferromagnetic material formed at the interface between said magnetoresistive layer and said layer of antiferromagnetic material by annealing the assembly; the assembly being characterised by: the antiferromagnetic material being a ternary antiferromagnetic material produced by annealing the assembly for an extended period of at least 35 hours; the ternary antiferromagnetic material producing a high exchange bias field with said magnetoresistive layer and said ternary antiferromagnetic material exhibiting an ordering temperature exceeding 300 degrees centigrade.

Inventors: HOWARD JAMES KENT, TONEY MICHAEL FOLSOM, TSANG CHING HWA, HOWARD, JAMES KENT, TONEY, MICHAEL FOLSOM, TSANG, CHING HWA
Applicants: IBM, INTERNATIONAL BUSINESS MACHINES CORPORATION
Application year: 1989
Main classification: G11B5
IPC codes: H01L43, G11B5