Naphthalocyanine compounds and process for their preparation

Abstract: A compound of formula (I) wherein each L is a group R₁R₂R₃Si-O- and R₁, R₂ and R₃ are the same of different and each is hydrogen, alkyl of from 1 to 4 carbon atoms, methoxy or ethoxy, and process for their preparation.

Description: This invention relates to Naphthalocyanine Compounds for use in an electrophotographic plate having high sensitivity for a long wavelength light of about 800 nm which is in a diode laser region. Electrophotographic plates have been produced by forming a selenium (Se) film of about 50 µm thick on an electroconductive substrate made of, for example, aluminum, by a vacuum deposition method. But the Se plate has a problem in that it has sensitivity only upto a wavelength of near 500 nm. On the other hand, there have been known electrophotographic plates produced by forming a Se layer of about 50 µm on an electroconductive substrate, followed by the formation of a selenium-tellurium (Se-Te) alloy layer of several µm thick. Such electrophotographic plates can extend the spectral light-sensitivity to a longer wavelength side by making the Te content in the Se-Te alloy higher. But with an increase of the Te adding amount, the surface charge retention properties of such electrophotographic plates become worse and cannot be used practically as an electrophotographic plate: this is a serious problem. It is also known so-called complex double layer type electrophotographic plates produced by forming a charge generation layer on an aluminum substrate by coating chlorocyan blue or squaraine derivative in about 1 µm thickness, and forming a charge transport layer thereon by coating a polyvinylcarbazole having high insulation resistance or a mixture of a pyrazole derivative and polycarbonate in 10-20 µm thickness. But such electrophotographic plates have practically no sensitivity to a light having a wavelength of 700 nm or more. Further, it is also known electrophotographic plates improved in the defect of the complex double layer type mentioned above so as to have sensitivity in about 800 nm which is in the diode laser region. But many of them show the longer wavelength sensitivity by forming a thin film with about 1 µm film thickness of a metal phthalocyanine having one or more metals of the group III or IV of the periodic table as center metals by a vacuum deposition method, and immersing the resulting thin film in a shifting agent solution or contacting the resulting thin film with a vapor of the shifting agent so as to shift the absorption of original about 700 nm to about 800 nm. On the thus treated thin film, a charge transport layer is formed by coating a polyvinylcarbazole having high insulation resistance or a mixture of a pyrazoline derivative or a hydrazone derivative and a polycarbonate resin or polyester resin in 10-20 µm thickness to produce complex double layer type electrophotographic plates. But in this case, since the metal phthalocyanine thin film having the metals of the group III or IV of the periodic table as center metals used as a charge generation layer has no absorption in the diode laser region of about 800 nm essentially, there is a serious problem in that such electrophotographic plates have no sensitivity or only low sensitivity to the light of about 800 nm (U.S. Patent No. 4,426,434). In laser beam printers using electrophotographic plates and laser beams as a light source, the use of diode laser as the light source has been tried variously in recent years. In this case, since the wavelength of this light source is about 800 nm, it is strongly desired to produce electrophotographic plates having high sensitivity to the longer wavelength light of about 800 nm. In J. Am. Chem. Soc. 1984 , 106, p. 7404-7,410 bis(trihexylsiloxy)silicon naphthalocyanine and the preparation thereof is described. The spectroscopic properties of that compound in the near infrared range are published there as well. European Appln. No 87303655.2, from which the present application is divided provides an electrophotographic plate comprising an electroconductive support and a photoconductive layer containing an organic photoconductive substance as a charge generating material formed on the support, said organic photoconductive substance being a naphthalocyanine compound of formula: (I) wherein L is a group of the formula: R₁R₂R₃Si-O-; R₁, R₂ and R₃ are independently hydrogen, an alkyl group or an alkoxy group. The present invention provides novel compounds of formula (I) wherein each L is a group R₁R₂R₃Si-O- and R₁, R₂ and R₃ are the same or different and each is hydrogen, alkyl of from 1 to 4 carbon atoms, methoxy or ethoxy. Fig. 1 is an NMR spectrum of bis(triethylsiloxy)silicon naphthalocyanine. Fig. 2 is a UV spectrum of bis(triethylsiloxy)silicon naphthalocyanine. Fig. 3 is an NMR spectrum of bis(tri-n-butylsiloxy)silicon naphthalocyanine. Fig 4 is a UV spectrum of bis(tri-n-butylsiloxy)silicon naphthalocyanine. Fig 5 is an NMR spectrum of bis(tri-n-propylsiloxy)silicon naphthalocyanine. Fig 6 is a UV spectrum of bis(tri-n-propylsiloxy)silicon naphthalocyanine. Fig 7 is a UV spectrum of bis(trimethylsiloxy)silicon naphthalocyanine. The naphthalocyanine compound of the formula: wherein L is a group of the formula: R₁R₂R₃Si-O-; R₁, R₂ and R₃ are independently hydrogen, an alkyl group having 1 to 4 carbon atoms, methoxy or ethoxy, generates charge by irradiation of light. The naphthalocyanine compound of the formula (I) can be produced by reacting dihydroxy-silicon naphthalocyanine of the formula: with a compound of the formula: R₁R₂R₃SiX (III) wherein R₁, R₂ and R₃ are as defined above; and X is a hydroxyl group or a halogen with heating. In this case, the reaction temperature is conveniently at least 140°C preferably from 150 to 200°C. Further, it is preferably to use an organic solvent such as tetralin, chlorobenzene, quinoline, 1-chloronaphthalene, 1,2,4-trimethylbenzene, 1,2,3-trimethylbenzene, xylene, toluene, benzene, dichlorobenzene, β-picoline, etc. alone or as a mixture thereof. Further, when X is a halogen in the compound of formula (III), it is preferable to use a catalyst such as tri-n-butylamine, tri-n-propylamine, tri-n-hexylamine, pyridine, or the like base. The catalyst is preferably used in a amount of 0.1 to 1% by weight based on the weight of dihydroxysilicon naphthalocyanine. In the production of bis(triethylsiloxy)silicon naphthalocyanine it is better to use triethylsilanol than to use triethylchlorosilicon considering the yield. Separation and purification of the bis(trialkylsiloxy)silicon naphthalocyanine from the reaction mixture can be carried out by a method comprising concentrating the reaction mixture, drying it and recrystallising it, or a method wherein the reaction mixture is poured into a poor solvent for the above-mentioned naphthalocyanine such as water, methanol, ethanol, propanol, or the like alcohol, a produced precipitate is collected and subjected to recrystallization, or the like. The recrystallization can be carried out by using the above-mentioned aromatic solvent or halogen series solvent. Dihydroxysilicon naphthalocyanine is a known compound and can be produced, for example, by the method described in J. Am. Chem. Soc. vol. 106, pp7404- (1984) and the route (A) as shown below: That is α,α,α′,α′-tetrabromo-o-xylene [the formula (V)] in an amount of 0.1 mol and fumaronitrile in an amount of 0.178 mol are reacted at 75°C for 7 hours in the presence of 0.67mol of sodium iodide in anhydrous N,N-dimethylformamide to yield 2,3-dicyanonaphthalene of the formula (VI). Subsequently, 57.3 mmol of the 2,3-dicyanonaphthalene is reacted with ammonia in the presence of sodium methoxide in methanol with heating for 3 hours to yield 1,3-diiminobenzo(f)isoindoline of the formula (VII). Further 30.6mmol of the 1,3-diiminobenzo(f)isoindoline was reacted with 47.1 mmol of silicone tetrachloride in anhydrous tetralin and anhydrous tri-n-butylamine under reflux for about 3 hours to give dichlorosilicon naphthalocyanine [SiNcX₂ (X =Cl)] which can be represented by the formula (II) except that the two OHs are replaced by two Cl's. Then, this compound is treated with concentrated sulfuric acid and then concentrated ammonia water to give dihydroxysilicon naphthalocyanine [SiNcX₂ (X = OH)] of the formula (II). The dihydroxysilicon naphthalocyanine of the formula (II) is reacted with a compound of the formula (III), for example, a chlorosilane compound of the formula: R₁R₂R₃SiCl (III′) wherein R₁, R₂ and R₃ are as defined above, at 140 to 150°C for 1.0 to 3.0 hours, e.g. 1.5 hours to yield the naphthalocyanine compound of the formula (I) wherein the two siloxys groups of the formula: R₁R₂R₃Si-O- are bonded to the central metal silicon. Examples of the siloxy group of the formula: R₁R₂R₃Si-O- are a dimethylsiloxy group, a trimethylsiloxy group, a dimethoxymethylsiloxy group, a dimethylpropylsiloxy group, a t-butyldimethylsiloxy group, a triethylsiloxy group, a triethoxysiloxy group, a tripropylsiloxy group, a tributylsiloxy group,. The compounds of this invention may be used in electrophotographic plates comprising a photoconductive layer on an electroconductive support as described in European Patent Application No. 87303655.2. This invention is explained in detail by way of the following Examples, in which all parts and percents are by weight unless otherwise specified. Synthesis Example 1 (1) Synthesis of 2,3-dicyanonaphthalene To 0.1 mole of tetrabromoxylene, 0.17 mole of fumaronitrile, 0.66 mole of sodium iodide and 400 ml of anhydrous dimethylformamide were added and heated with stirring at 70 to 80°C for 7 hours. The reaction solution was added to 800 g of ice water. To the deposited precipitate, about 15 g of sodium hydrogen sulfite was added and allowed to stand overnight. After filtration by suction and drying, white 2,3-dicyanonaphthalene was obtained by recrystallization from chloroform/ethanol in yield of 80%. (2) Synthesis of 1,3-diiminobenz(f)isoindoline In 2.5 moles of 2,3-dicyanonaphthalene, 0.075 mole of sodium methoxide and 1 liter of methanol, an ammonia gas was flowed with a suitable flow rate for 40 minutes. Then, the reaction solution was refluxed with heating while flowing the ammonia gas for 4 hours. After cooling, the product was filtered, and recrystallized from a mixed solvent of methanol/ether to yield yellow 1,3-diiminobenz(f)isoindoline in 66% yield. (3) Synthesis of dichlorosilicon naphthalocyanine 1,3-Diiminobenz(f)isoindoline in an amount of 3 millimoles, 4.8 millimoles of silicon tetrachloride, 2 ml of dried tri-n-butylamine and 4 ml of dried tetralin were refluxed with heating for about 2.5 hours. After cooling, 3 ml of methanol was added to the reaction solution, and allowed to stand. After filtering by suction and washing with methanol sufficiently, there was obtained dark green dichlorosilicon naphthalocyanine in 24% yield. (4) Synthesis of dihydroxysilicon naphthalocyanine To 0.71 millimole of dichlorosilicon naphthalocyanine, 20 ml of concentrated sulfuric acid was added and stirred at room temperature for 2 hours, followed by addition of 60 g of ice to the reaction solution. After filtering by suction and drying, the precipitate was placed in 60 ml of 25% ammonia water and refluxed with heating for 1 hour to give dihydroxysilicon naphthalocyanine quantitatively. Example 1 Synthesis of Bis(dimethylpropylsiloxy)silicon naphthalocyanine: To 0.8 millimole of dihydroxysilicon naphthalocyanine, 8 millimoles of dimethylpropylsilyl chloride and 70 ml of β-picoline were added and refluxed with heating for 1.5 hours. After filtering, the filtrate was added to a mixed solution of water/ethanol to deposit a precipitate. After filtering the precipitate, it was recrystallized from n-hexane to give a naphthalocyanine compound in 50% yield. Example 2 Bis(triethylsiloxy) silicon naphthalocyanine was synthesized in the same manner as described in Example 1 except for using triethylsilyl chloride in place of dimethylpropylsilyl chloride. Example 3 Bis(tripropylsiloxy)silicon naphthalocyanine was synthesized in the same manner as described in Example 1 except for using tripropylsilyl chloride in place of dimethylpropylsilyl chloride. Example 4 Bis(tributylsiloxy)silicon naphthalocyanine was synthesized in the same manner as described in Example 1 except for using tributylsilyl chloride in place of dimethylpropylsilyl chloride. Example 5 Bis(dimethoxymethylsiloxy)silicon naphthalocyanine was synthesized in the same manner as described in Example 1 except for using dimethoxymethylsilyl chloride in place of dimethylproplsilyl chloride. Example 6 Bis(triethoxysiloxy)silicon naphthalocyanine was synthesized in the same manner as described in Example 1 except for using triethoxysilyl chloride in place of dimethylpropylsilyl chloride. Example 7 To suspension of 35 ml of quinoline containing 774 mg (1 mmol) of dihydroxynaphthalocyanine, 3.5 ml (23 mmol) of triethylsilanol was added and refluxed for about 3 hjours. After cooling, the reaction mixture was poured into 200 ml of ethanol/water (1/1), stirred well and allowed to stand overnight. A deposited precipitate was filtered and washed with methanol. A soluble portion of the precipitate was dissolved with about 600 ml of hot chloroform and the resulting chloroform solution was concentrated to about 50ml. After cooling the concentrated chloroform solution, deposited crystals were filtered and washed with chloroform. The obtained crystals were recrystallised from chloroform to give 360 mg of dark green crystals in 36% yield. The dark green crystals were identified as bis(tri-ethylsiloxy)silicon naphthalocyanine [L is -O-Si-(-C₂H₅)₃ in the formula (I)] by the following analytical results. (1) Melting point: >300°C (2) Elementary analysis: C (%) H (%) N (%) Calcd 71.82 5.42 11.17 Found 70.45 5.34 10.92 (3) NMR values (CDCl₃ solvent, Fig. 1) values 10.13 (8H, s) 8.68 (8H, dd, J = 6.10, 3.05 Hz) 7.93 (8H, dd, J = 6.10, 3.05 Hz) -1.02 (12H, t, J = 7.93 Hz) -2.07 (18H, q, J = 7.93 Hz) (4) UV spectrum (CHCl₃ solution): Fig .2 Example 8 To 420ml of a suspension of anhydrous β-picoline containing 3 g (3.9 mmol) of dihydroxysilicon naphthalocyanine, 12ml (50.4 mmol) of anhydrous tri-n-butylamine and then 13.2 ml (49.2 mmol) of tri-n-butylchlorosilane were added in a nitrogen atmosphere and refluxed for about 2 hours. After cooling, the resulting mixture was poured into 600ml of ethanol/water (1/1), stirred well and allowed to stand overnight. A deposited precipitate was filtered and washed with water. A soluble portion of the precipitate was dissolved with about 600ml of hot chloroform and the chloroform solution was dried over anhydrous sodium sulphate, followed by concentration to about 50 ml. After cooling the concentrated chloroform solution, deposited crystals were filtered and washed with chloroform. The mother liquid was concentrated and eluted by using bezene as a developing solvent by means of alumina column chromotography. Then the green benzene solution was concentrated and added with hexane to deposit crystals, where were filtered and washed with sufficient hexane. All the obtained crude crystals were recrystallized from chloroform to give about 2 g (44% yield) of dark green crystals. The dark green crystals were identified as bis-tri-n- butylsiloxy)silicon naphthalocyanine by the following analytical results. (1) Melting point: >300°C (2) Elementary analysis: C (%) H (%) N (%) Calcd 73.81 6.71 9.50 Found 73.71 6.73 9.40 (3) NMR values (CDCl₃, Fig. 3) δ values 10.11 (8H, s) 8.67 (8H, dd, J = 6.10, 3.35 Hz) 7.92 (8H, dd, J = 6.10, 3.35 Hz) -0.1 to 01 (30H, m) -0.97 (12H quintet, J = 7.32 Hz) -2.07 (12H, t, J = 7.32 Hz) (4) UV spectrum (CHCl₃ solution): Fig. 4 Example 9 To 420 ml of a suspension of anhydrous β-picoline containing 3 g (3.9 mmol) of dihydroxysilicon naphthalocyanine, 12 ml (50.4 mmol) of anhydrous tri-n-butylamine and then 10.8 ml (49.2 mmol) of tri-n-propylchlorosilane were added and refluxed for about 2 hours. After cooling, the reaction mixture was treated in the same manner as described in Example 8 and the recrystallisation was carried out using chloroform. As a result, 1.45g (34% yield) of dark green crystals were obtained. The dark green crystals were identified as bis(tri-n-propylsiloxy)silicon naphthalocyanine by the following analytical results. (1) Melting point: >300°C (2) Elementary analysis: C (%) H (%) N (%) Calcd. 72.89 6.12 10.30 Found 72.70 6.13 10.28 (3) NMR values (CDCl₃ Fig. 5) δ values 10.03 (8H, s) 8.68 (8H, dd, J = 6.10, 3.03 Hz) 7.93 (8H, dd, J = 6.10, 3.03 Hz) -0.28 (18H, t, J = 7.32 Hz) -0.85 (12H, sextet, J = 7.32 Hz) -2.06 (12H, t, J = 7.32 Hz) (4) UV spectrum (CHCl₃ solution: Fig 6 Example 10 To 140 ml of a suspension of anhydrous β-picoline containing 1 g (1.3 mmol) of dihydroxysilicon naphthalocyanine, 4 ml (16.8 mmol) of anhydrous tri-n-butylamine and then 2.1 ml (16.4 mmol) of trimethylchlorosilane were added and refluxed for about 2 hours. After cooling the reaction mixture was treated in the same manner as described in Example 8 to give dark green crystals of bis(trimethylsiloxy)silicon naphthalocyanine. Fig. 7 shows a UV spectrum of this compound (CHCl₃ solution).

Claims: A compound of formula (I) wherein each L is a group R₁R₂R₃Si-O- and R₁, R₂ and R₃ are the same or different and each is hydrogen, alkyl of from 1 to 4 carbon atoms, methoxy or ethoxy. A compound according to claim 1 wherein R₁, R₂ and R₃ are the same or different and each is selected from hydrogen, methyl, ethyl, propyl, n-butyl, t-butyl, methoxy and ethoxy. A compound according to claim 1 or claim 2 wherein R₁, R₂ and R₃ are the same or different and each is alkyl. A compound according to claim 1 wherein the groups L are the same and are selected from dimethylsiloxy, trimethylsiloxy, dimethoxymethylsiloxy, dimethylpropylsiloxy, t-butyldimethylsiloxy, triethylsiloxy, triethoxysiloxy, tripropylsiloxy and tributylsiloxy. A compound according to claim 1 and selected from bis(dimethylpropylsiloxy)silicon naphthalocyanine, bis(triethylsiloxy)silicon naphthalocyanine, bis(tripropylsiloxy)silicon naphthalocyanine, bis(tributylsiloxy)silicon naphthalocyanine, bis(dimethoxymethylsiloxy)silicon naphthalocyanine and bis(triethoxysiloxy)silicon naphthalocyanine. A process for producing a naphthalocyanine compound of formula (I) as defined in any one of claim 1 to 5 which comprises reacting dihydroxysilicon naphthalocyanine of the formula: with a compound of the formula: R₁R₂R₃SiX (III) wherein R₁, R₂ and R₃ are as defined in relation to the compound of formula (I) and X is hydroxyl or halogen. A process according to claim 6 wherein X is chlorine and the reaction is performed at from 140°C to 200°C in the presence of a base as catalyst and in a suitable organic solvent.

Inventors: HAYASHIDA SIGERU C O PROF DR M, TAI SEIJI KAMISUWA, HAYASHIDA, SIGERU C/O PROF. DR. MICHAEL HANACK, TAI, SEIJI KAMISUWA APARTMENT 402
Applicants: HITACHI CHEMICAL CO LTD, HITACHI CHEMICAL CO., LTD.
Application year: 1989
Main classification: C07F7
IPC codes: G03G5, C09B47, C07F7