LIGHT-SENSITIVE COMPOSITION

Abstract: A positive working light-sensitive composition comprises (a) a compound capable of generating an acid through irradiation with actinic rays or radiant rays and (b) an organic polysiloxane compound having linear one-dimensional, branched or ladder type two-­ dimensional and/or three-dimensional network structures. The light-­ sensitive composition has high sensitivity, large tolerance with respect to light sources and excellent resistnce to oxygen plasma etching. Moreover, the composition is alkali-developable. Therefore, it can be used in preparing presensitized plate for use in making lithographic printing plates, proof sheets for process printing, figures for overhead projectors and in forming fine resist patterns employed for manufacturing IC circuits of semiconductor elements.

Description: The present invention relates to a positive working light-sensitive composition which makes it possible to form a presensitized plate for use in making a lithographic printing plate (hereunder referred to as "PS plate"), proof sheets for process printing, figures for overhead projectors or fine resist patterns required for making integrated circuits (IC) of semiconductor elements. As so-called positive working light-sensitive materials which are made soluble by irradiating with actinic rays, for instance, in making lithographic printing plates, there have been known o-quinonediazide compounds and these compounds have practically been utilized widely for preparing PS plates or the like. Such o-quinonediazide compounds are disclosed in various publications inclusive of U.S. Patent Nos. 2,766,118; 2,767,092; 2,772,972; 2,869,112; 2,907,665; 3,046,110; 3,046,111; 3,046,115; 3,046,118; 3,046,119; 3,046,120; 3,046,121; 3,046,122; 3,046,123; 3,061,430; 3,102,809; 3,106,465; 3,635,709; and 3,647,443. These o-quinonediazide compounds are decomposed by irradiation with actinic rays to form 5-membered carboxylic acids and they are thus made alkali-soluble. In these applications of the light-sensitive material, such properties of the compounds are utilised. However, their light-sensitivity is insufficient. This problem arises because it is difficult to optically sensitize the o-quinonediazide compounds and their quantum yield never exceeds 1. Moreover, the wave length used for exposing the same is limited to a specific one and, therefore, tolerance with respect to light sources is narrow. In other words, it is difficult to impart resistance to incandescent rays to the composition. In addition, the absorption of light in Deep-UV region is great and thus it is not suitable for applications in which light of short wave length is used to enhance the resolution of a photoresist. Many attempts have been made to improve the light-sensitivity of light-sensitive compositions containing o-quinonediazide compounds. However, it is very difficult to improve the light-sensitivity while maintaining the development latitude during development. For instance, examples of such attempts are those disclosed in Japanese Patent Publication for Opposition Purpose (hereunder referred to as "J.P. KOKOKU") No. Sho 48-12242, Japanese Patent Un-examined Publication (hereunder referred to as "J.P. KOKAI") No. Sho 52-40125 and U.S. Patent No. 4,307,173. Recently, there have been proposed some positive working light-sensitive compositions free of o-quinonediazide compounds. One example thereof comprises a polymeric compound having o-nitrocarbinol ester groups as disclosed in J.P. KOKOKU No. Sho 56-2696. However, such a composition does not provide high sensitivity for the same reasons as those discussed above in connection with o-quinonediazide compounds. On the other hand, as pattern-forming methods used in making electronic parts such as semiconductor elements, magnetic bubble memories and integrated circuits, there have been widely employed methods in which a photoresist sensitive to ultraviolet and visible rays. The photoresists can be divided into two groups, one of which is negative working type ones whose exposed portions are made insoluble in a developer by irradiating with light, and the other of which is positive working ones whose exposed portions are, on the contrary, made soluble in a developer. The negative working type ones are superior in sensitivity to the positive working ones and also excellent in adhesion to a substrate and resistance to chemicals required in wet etching. Therefore, the negative working ones were the mainstreams of photoresists. However, the line width and the distance between lines of patterns become smaller as the degree of integration of semiconductor elements and the packaging density thereof are increased. In addition, dry etching techniques have been adopted as a means for etching substrates. Thus, the photoresists should have high resolution and high resistance to dry etching. For this reason, positive working photoresists are mainly utilized recently. In particular, there have been exclusively used alkali developable positive working photoresists mainly composed of alkali-soluble novolak resins as disclosed in J.C. Strieter, Kodak Microelectronics Seminar Proceedings, 1976, p. 116, since they are excellent in sensitivity, resolution and resistance to dry etching. However, it is required to further scale down the size of patterns to thus achieve higher packaging density and degree of integration accompanied by the recent increase in multifunctionality and high functionality of electronic devices. More specifically, the size of integrated circuits in their transversal direction is greatly reduced, but the size thereof in the longitudinal direction cannot be reduced so much. Therefore, the ratio of the height of the resist patterns to the width thereof is correspondingly increased. For this reason, it becomes very difficult to restrict the change in size of the resist patterns on a semiconductor wafer having a complicated stepped structure as the scale down of patterns proceeds. In addition, various methods for exposure suffer from problems as the scale down in the minimum size of patterns. For instance, the exposure by means of light causes interference effect due to light reflected by the stepped portions of the substrate which greatly affects dimensional accuracy. On the other hand, in the exposure by means of an electron beam, the ratio of the height to the width of fine resist patterns cannot be increased because of the proximity effect caused due to backscattering of electrons. It is found that most of these problems can be eliminated by the use of a multilayered resist system. The multilayered resist system is summarized in Solid State Technology, 74 (1981) and a variety of investigations on the multilayered resist system have been reported. In general, the multilayered resist methods can be divided into triple layer resist method and double layer resist method. The triple layer resist method comprises applying an organic film for leveling onto the surface of a stepped substrate, and then applying thereto an inorganic intermediate layer and a resist layer in this order; patterning the resist layer, removing the inorganic layer by dry etching using the patterned resist layer as a mask, and finally patterning the organic leveling layer by O₂ RIE (reactive ion etching) technique to form a desired pattern on the stepped substrate. The investigation of this method has been started from earlier stage since it can essentially utilize techniques conventionally known, but it requires the use of very complicated processes, or since these layers, i.e., an organic film, an inorganic film and an organic film which differ in physical properties from each other are superposed, the intermediate layer is liable to cause cracks or to form pinholes. Contrary to the triple layer resist method, the double layer resist method utilizes a resist having properties of both resist and inorganic intermediate layers in the triple layer resist method, more specifically a resist resistant to oxygen plasma etching and thus the formation of cracks and pinholes can be suppressed. Further, since the number of layers are reduced from 3 to 2, the process can be simplified. However, a conventional resist can be used as the upper resist in the triple layer resist method while, in the double layer resist method, it is required to newly develop a resist excellent in resistance to oxygen plasma. Under such circumstances, there has been required to develop a highly sensitive positive working photoresist having a high degree of resolution which is excellent in resistance to oxygen plasma and can hence be used as an upper resist in the double layer resist method or the like, in particular an alkaline developable resist which can be used without changing the processes currently employed. As such a resist, there have been proposed a light-sensitive composition comprising a combination of a conventional o-quinonediazide light-sensitive material and a silicone polymer such as polysiloxane or polysilmethylene which is made alkali-soluble, for instance, those disclosed in J.P. KOKAI Nos. Sho 61-256347, Sho 61-144639, Sho 62-159141, Sho 62-191849, Sho 62-220949; Sho 62-229136, Sho 63-90534 and Sho 63-91654 and U.S. Patent No. 4,722,881; and a light-sensitive composition comprising a combination of a polysiloxane/carbonate block copolymer and an effective amount of an onium salt as disclosed in J.P. KOKAI No. Sho 62-136638. However, the production of these silicone polymers is very difficult, since they should be made alkali-soluble and so forth and their stability with time is not always sufficient. US Patent No. 4,689,289 discloses the formation of positive resist images using compositions containing silicone-organic block copolymers with iodonium and sulfonium salts as acid generating compounds. The inventors of this invention have conducted various studies to solve the foregoing problems, and have found that a combination of an organic polysiloxane compound inherently insoluble in an alkali and excellent in stability with time with a compound capable of generating an acid through irradiation with actinic rays or radiant rays can unexpectedly be made alkali-soluble by exposing it to light and thus have completed the present invention. Consequently, the present invention provides a positive working light-sensitive composition comprising: (a) a compound capable of generating an acid through irradiation with actinic rays or radiant rays, selected from formulae (XXI) to XXVII describes below; and (b) an organic polysiloxane compound having a linear one-dimensional structure, a branched or ladder type two-dimensional structure and/or a three-dimensional network structure, derived from formulae (I) to (V) below. The positive working light-sensitive composition of the present invention may further comprise an alkaline-soluble polymer. The present invention will hereinafter be explained in more detail. Organic Polysiloxane having Linear, Branched and/or Three-dimensional Structures The polysiloxane compounds used in the composition of the present invention as the component (b) are prepared by hydrolyzing or alkoxylating a compound represented by the following general formula (I), (II), (III), (IV) or (V) or a combination thereof and then condensing the resultant product. R₁ - Si - (X)₃ (I) In the foregoing formulas, R₁ to R₇, R₉ to R₁₁, and R₁₃ to R₁₄ may be the same or different and each represents a hydrogen atom or an alkyl, substituted alkyl, aryl, substituted aryl, alkenyl, substituted alkenyl, silyl, substituted silyl, siloxy or substituted siloxy group. More specifically, the alkyl group may be a linear, branched or cyclic one preferably having about 1 to about 10 carbon atoms and specific examples thereof include methyl, ethyl, propyl, butyl, hexyl, octyl, decyl, iso-propyl, iso-butyl, tert-butyl, 2-ethylhexyl and cyclohexyl groups. The substituted alkyl group may be those listed above which are substituted with a halogen atom such as chlorine atom, an alkoxy group having 1 to 6 carbon atoms such as methoxy group, an aryl group such as phenyl group and/or an aryloxy group such as phenoxy group and specific examples thereof are monochloromethyl, dichloromethyl, trichloromethyl, bromomethyl, 2-chloroethyl, 2-bromoethyl, 2-methoxyethyl, 2-ethoxyethyl, phenylmethyl, naphthylmethyl and phenoxymethyl groups. The aryl group may preferably be monocyclic or bicyclic ones such as phenyl, α -naphthyl and ß - naphthyl groups. The substituted aryl groups may be those listed above which are substituted with alkyl groups having 1 to 6 carbon atoms such as methyl and ethyl groups; alkoxy groups having 1 to 6 carbon atoms such as methoxy and ethoxy groups; halogen atoms such as chlorine atom; and/or nitro, phenyl, carboxy, hydroxy, amido, imido and/or cyano groups. Specific examples thereof are 4-chlorophenyl, 2-chlorophenyl, 4-bromophenyl, 4-nitrophenyl, 4-hydroxyphenyl, 4-phenylphenyl, 4-methylphenyl, 2-methylphenyl, 4-ethylphenyl, 4-methoxyphenyl, 2-methoxyphenyl, 4-ethoxyphenyl, 2-carboxyphenyl, 4-cyanophenyl, 4-methyl-1-naphtyl, 4-chloro-1-naphthyl, 5-nitro-1-naphthyl, 5-hydroxy-1-naphthyl, chloro-2-naphthyl, 4-bromo-2-naphthyl and 5-hydroxy-2-naphthyl groups. The alkenyl group is, for instance, a vinyl group and an allyl group and the substituted alkenyl group may be a vinyl group which is substituted with alkyl groups such as methyl group and/or aryl groups such as phenyl group. Specific examples of the substituted alkenyl groups are 1-methylvinyl, 2-methylvinyl, 1,2-dimethylvinyl, 2-phenylvinyl, 2-(p-methylphenyl)vinyl, 2-(p-methoxylphenyl)vinyl, 2-(p-chlorophenyl)vinyl and 2-(o-chlorophenyl)vinyl. Examples of the substituted silyl groups are alkyl and/or aryl-substituted silyl groups such as trialkylsilyl and triarylsilyl groups. Such alkyl and aryl groups may be those listed above. If these substituents each represents a siloxy or substituted siloxy group, these groups may be those bonded with siloxy or substituted siloxy groups of the adjacent structural units or those having a two-dimensional or three-dimensional structure such as those formed by bonding the siloxy or substituted siloxy group to that of other molecule as will be described below: R₈, R₁₂ and R₁₅ may be the same or different and each represents a single bond, a bivalent alkylene group, a substituted alkylene group, an arylene group or a substituted arylene group. More specifically, the alkylene group may be linear, branched or cyclic ones, particularly a linear alkylene group and preferably those having 1 to 10 carbon atoms such as methylene, ethylene, butylene and octylene groups. Examples of the substituted alkylene group are the foregoing alkylene groups which are substituted with halogen atoms such as chlorine atom, alkoxy groups having 1 to 6 carbon atoms and/or aryloxy groups having 6 to 10 carbon atoms. The arylene group may preferably be monocyclic and bicyclic ones such as phenylene and naphthylene groups. Moreover, examples of the substituted arylene group are arylene groups which are substituted with alkyl groups having 1 to 6 carbon atoms such as methyl and ethyl groups, alkoxy groups having 1 to 6 carbon atoms such as methoxy and ethoxy groups and/or halogen atoms such as chlorine atom. Specific examples thereof are chlorophenylene, bromophenylene, nitrophenylene, phenylphenylene, methylphenylene, ethylphenylene, methoxyphenylene, ethoxyphenylene, cyanophenylene, methylnaphthylene, chloronaphthylene, bromonaphthylene and nitronaphthylene groups. X represents a hydrolyzable group and specific examples thereof include halogen atoms such as chlorine and bromine atoms; alkoxy groups having 1 to 10 carbon atoms such as methoxy, ethoxy and propoxy groups; aryloxy groups having 6 to 10 carbon atoms such as phenoxy group; acyloxy groups having 1 to 10 carbon atoms such as acetoxy group; oxime groups having 1 to 6 carbon atoms such as methylaldoxime; amido, ureido and amino groups. The polysiloxane compounds used in the present invention can specifically be represented by a structure composed of one or more repeating units selected from the group consisting of those represented by the following general formulas: In these formulas, R₁₆ to R₁₉, R₂₁ to R₂₆, and R₂₈ to R₂₉ may be the same or different and each has the same meanings as those defined above in connection with the groups R₁ to R₇, R₉ to R₁₁, R₁₃ to R₁₄ ; and R₂₀, R₂₇ , and R₃₀ may be the same or different and each has the same meanings as those defined above in connection with the groups R₈, R₁₂ and R₁₅. Specific examples of the organic polysiloxane compounds as used herein are as follows: In the foregoing examples of the compound, n, x, y and z each is an integer of not less than 1. The molecular weight of the organic polysiloxane used in the invention can freely be controlled by changing the condensation conditions, but preferred value thereof is not less than 500, more preferably 1,000 to 500,000 expressed in the weight averaged molecular weight. Compounds Capable of Generating Acids Through Irradiation of Actinic Rays or Radiant Rays Examples of suitable compounds capable of generating acids through irradiation with actinic rays or radiant rays used in the invention as the component (a) are various known compounds and mixtures such as diazonium, phosphonium, sulfonium and iodonium salts of BF₄ ⁻ ,AsF₆ ⁻ ,PF₆ ⁻ , SbF₆⁻ , SiF₆⁻ and Cℓ O₄⁻ ; organic halogen compounds; and combinations of organometals and organic halogen compounds. It is also suitably used, in the composition of the present invention, compounds capable of generating acids through photolysis as disclosed in U.S. Patent No. 3,779,778, German Patent No. 2,610,842 and European Patent No. 126,712. In addition, compounds which are combined with a suitable dye to give a visible contrast between exposed and unexposed areas when they are exposed to light can also be used in the composition of the invention. Examples of such compounds are disclosed in, for instance, J.P. KOKAI Nos. Sho 55-77742 and Sho 57-163234. For use in the present invention, the compounds capable of generating acids are selected from the following groups (1) to (3). (1) Oxadiazole derivatives or s-triazine derivatives represented by the following general formula (XXI) or (XXII) which is substituted with a trihalomethyl group: In the general formulas, R₃₁ represents a substituted or unsubstituted aryl or alkenyl group; R₃₂ represents R₃₁, -CY₃ or a substituted or unsubstituted alkyl group; and Y represents a halogen atom, in particular a chlorine or bromine atom, provided that three Y's may be the same or different. Specific examples thereof are those listed below: (2) Iodonium salts or sulfonium salts represented by the following general formula (XXIII) or (XXIV) respectively: In these formulas, Ar₁ and Ar₂ may be the same or different and each represents a substituted or unsubstituted aromatic group. Examples of preferred substituents of the aromatic groups are alkyl, haloalkyl, cycloalkyl, aryl, alkoxy, nitro, carbonyl, alkoxycarbonyl, hydroxy and mercapto groups and halogen atoms, more preferably alkyl groups having 1 to 8 carbon atoms, alkoxy groups having 1 to 8 carbon atoms, nitro group and chlorine atom. R₃₃ , R₃₄ and R₃₅ may be the same or different and each represents a substituted or unsubstituted alkyl or aromatic group, preferably an aryl group having 6 to 14 carbon atoms, an alkyl group having 1 to 8 carbon atoms or a substituted derivative thereof. Examples of preferred substituents for the aryl groups are alkoxy groups having 1 to 8 carbon atoms, alkyl groups having 1 to 8 carbon atoms, nitro, carbonyl and hydroxyl groups and halogen atoms and those for alkyl groups are alkoxy groups having 1 to 8 carbon atoms, carbonyl group and alkoxycarbonyl groups. Z⁻ represents BF₄ ⁻, PF₆ ⁻ , AsF₆ ⁻, SbF₆ ⁻, C ℓ O₄⁻ , CF₃SO₃⁻ . Moreover, two of the groups R₃₃, R₃₄ and R₃₅, and Ar₁ and Ar₂ each may be bonded through a single bond or a substituent. Examples of the compounds represented by formula (XXIII) are those disclosed in J.P. KOKAI Nos. Sho 50-158680 and Sho 51-100716 and J.P. KOKOKU No. Sho 52-14277. Specific examples thereof are as follows: Examples of the compounds represented by formula (XXIV) are those disclosed in J.P. KOKAI No. Sho 51-56885, J.P. KOKOKU No. Sho 52-14278, U.S. Patent No. 4,442,197 and German Patent No. 2,904,626. Specific examples thereof are listed below: The compounds represented by the general formulas (XXIII) and (XXIV) are known and can be prepared, for instance, according to the procedures disclosed in J.W. Knapczyk et al., J. Am. Chem. Soc., 1969, 91 , p. 145; A.L. Maycock et al., J. Org. Chem., 1970, 35 , p. 2532; E. Goethals et al., Bull. Soc. Chem. Belg., 1964, 73 , p. 546; H.M. Leicester, J. Am. Chem. Soc., 1929, 51 , p. 3587; J. V. Crivello et al., J. Polym. Sci. Polym. Chem. Ed., 1980, 18 , p. 2677; U.S. Patent Nos. 2,807,648 and 4,247,473; F.M. Beringer et al., J. Am. Chem. Soc., 1953, 75 , p. 2705; and J.P. KOKAI No. Sho 53-101331. (3) Disulfone derivatives or imidosulfonate derivatives represented by the following general formula (XXV) or (XXVI): Ar₃- SO₂-SO₂- Ar₄ (XXV) In these formulas, Ar₃ and Ar₄ may be the same or different and each represents a substituted or unsubstituted aryl group; R₃₆ represents a substituted or unsubstituted alkyl or aryl group and A represents a substituted or unsubstituted alkylene, alkenylene or arylene group. Specific examples thereof are as follows: The amount of these compounds capable of generating acids to be added to the composition typically ranges from 0.001 to 40% by weight, preferably 0.1 to 20% by weight on the basis of the total weight of the solid contents of the composition. Alkali-soluble Polymers The positive working light-sensitive composition of the present invention may comprise simply a combination of the components (a) and (b), but it may further comprise an alkali-soluble polymer. The alkali-soluble polymers used in the composition are polymers carrying acidic hydrogen atom having a pKa value of not more than 11 such as phenolic hydroxyl group, carboxyl group, sulfonate residue, imido group, sulfonamido group, N-sulfonylamido group, N-sulfonylurethane group and/or active methylene group. Preferred alkali-soluble polymers are novolak type phenol resins such as phenol-formaldehyde resin, o-cresol-formaldehyde resin, m-cresol-formaldehyde resin, p-cresol-formaldehyde resin, xylenol-formaldehyde resin and co-condensates thereof. It is also possible to simultaneously use the aforesaid phenol resin and a condensate of phenol or cresol substituted with an alkyl group having 3 to 8 carbon atoms with formaldehyde such as t-butylphenol/formaldehyde resin as disclosed in J.P. KOKAI No. Sho 50-125806. Examples of other polymers usable in the invention are polymers comprising phenolic hydroxyl group-containing monomer such as N-(4-hydroxyphenyl) methacrylamide as a copolymerization component; homo- or copolymers of monomer(s) such as p-hydroxystyrene, o-hydroxystyrene, m-isopropenylphenol and/or p-isopropenylphenol and partially etherified or esterified products thereof. Further, polymers comprising a carboxyl group-containing monomer such as acrylic acid and methacrylic acid as a copolymerization component; carboxyl group-containing polyvinyl acetal resins as disclosed in J.P. KOKAI No. Sho 61-267042; and carboxyl group-containing polyurethane resins as disclosed in J.P. KOKAI No. Sho 63-124047 can suitably be used. Polymers comprising repeating units derived from monomers such as N-(4-sulfamoylphenyl) methacrylamide, N-phehnylsulfonyl methacrylamide and/or maleimide as copolymerization components; and active methylene group-containing polymers as disclosed in J.P. KOKAI No. Sho 63-127237 are also used in the composition of the invention. These alkali-soluble polymers may be used alone or in combination. The amount of these alkali-soluble polymers to be incorporated into the light-sensitive composition preferably ranges from 10 to 90% by weight, more preferably 30 to 80% by weight on the basis of the total weight of the solid contents of the composition. Other Preferred Components The positive working light-sensitive composition of the present invention may optionally comprise other additives such as dyes, pigments, plasticizers and compounds for enhancing the acid-generating efficiency of the foregoing compounds (so-called sensitizers). Such sensitizers for the acid generator represented by formulas (XXIII) and (XXIV) are, for instance, compounds disclosed in U.S. Patent Nos. 4,250,053 and 4,442,197. Specific examples thereof are anthracene, phenanthrene, perylene, pyrene, chrysene, 1,2-benzanthracene, coronene, 1,6-diphenyl-1,3,5-hexatriene, 1,1,4,4-tetraphenyl-1,3-butadiene, 2,3,4,5-tetraphenyl furan, 2,5-diphenylthiophene, thioxanthone, 2-chlorothioxanthone, phenothiazine, 1,3-diphenyl pyrazoline, 1,3-diphenyl isobenzofuran, xanthone, benzophenone, 4-hydroxybezophenone, anthrone, ninhydrin, 9-fluorenone, 2,4,7-trinitrofluorenone, indanone, phenanthraquinone, tetralone, 7-methoxy-4-methylcoumalin, 3-keto-bis(7-diethylaminocoumalin), Michler's ketone and ethyl Michler's ketone. The molar ratio of these sensitizers to the compound capable of generating an acid by irradiation of actinic rays or radiant rays ranges from 0.01/1 to 20/1 and preferably 0.1/1 to 5/1. In addition, days may be used as a coloring agent and preferred dyes include, for instance, oil-soluble dyes and basic dyes. Specific examples thereof are Oil Yellow #101, Oil Yellow #130, Oil Pink #312, Oil Green BG, Oil Blue BOS, Oil Blue #603, Oil Black BY, Oil Black BS, Oil Green BG, Oil Blue BOS, Oil Blue #603, Oil Black BY, Oil Black BS, Oil Black T-505 (these dyes being available from ORIENT CHEMICAL INDUSTRIES, LTD.), Crystal Violet (CI 42555), Methyl Violet (CI 42535), Rhodamine B (CI 45170 B), Malachite Green (CI 42000) and Methylene Blue (CI 52015). The light-sensitive composition of the present invention may further comprise cyclic acid anhydrides and other fillers for further enhancing the sensitivity thereof. Examples of cyclic acid anhydrides are, as disclosed in U.S. Patent No. 4,115,128, phthalic anhydride, tetrahydrophthalic anhydride, hexahydrophthalic anhydride, 3.6-endoxy- Δ ⁴-tetrahydrophthalic anhydride, tetrachlorophthalic anhydride, maleic anhydride, chloremaleic anhydride, α-phenylmaleic anhydride, succinic anhydride and pyromellitic anhydride. The sensitivity can be increased as high as about 3 times at maximum by incorporating these cyclic acid anhydride into the composition in an amount of 1 to 15% by weight based on the total weight of the composition. Solvent The positive working light-sensitive composition of the present invention is dissolved in a solvent capable of dissolving the components of the composition and then applied onto the surface of a substrate if it is used as a material for PS plates. In addition if it is used as a resist for processing semiconductors or the like, it is dissolved in a solvent and the solution is used as such. Examples of such solvents herein used are ethylene dichloride, cyclohexanone, methyl ethyl ketone, methanol, ethanol, propanol, ethylene glycol monomethyl ether, 1-methoxy-2-propanol, ethylene glycol monoethyl ether, 2-methoxyethyl acetate, 1-methoxy-2-propyl acetate, dimethoxyethane, methyl lactate, ethyl lactate, N,N-dimethylacetamide, N,N-dimethylformamide, tetramethyl urea, N-methylpyrrolidone, dimethylsulfoxide, sulforane, γ-butyrolactone, toluene and ethyl acetate and these solvents can be used alone or in combination. The concentration of the foregoing components (the total solid contents inclusive of additives) ranges from 2 to 50% by weight. When the solution is applied onto a substrate, the amount thereof coated varies depending on the applications and, for instance, as a rule it preferably ranges from 0.5 to 3.0 g/m² based on the solid contents for PS plates. As the amount thereof coated decreases, the light-sensitivity correspondingly increases, but, on the contrary, physical properties of the resultant film are impaired. Preparation of PS plates or the Like When a PS plate is prepared from the positive working light-sensitive composition of this invention, a substrate is in general used and examples thereof include paper, paper laminated with a plastic film such as polyethylene, polypropylene or polystyrene film; a metal plate such as an aluminum (inclusive of aluminum alloys), zinc or copper plate; a plastic film such as a cellulose diacetate, cellulose triacetate, cellulose propionate, cellulose butyrate, cellulose acetate butyrate, cellulose nitrate, polyethylene terephthalate, polyethylene, polystyrene, polypropylene, polycarbonate or polyvinyl acetal film; and paper or a plastic film listed above which is laminated with a metal foil or on which a layer of the foregoing metal is deposited. Particularly preferred is an aluminum plate because of its high dimensional stability and low cost. Further, it is also preferred to use a composite sheet comprising a polyethylene terephthalate film on which an aluminum sheet is bonded as disclosed in J.P. KOKOKU No. Sho 48-18327. The surface of the aluminum plate is preferably grained by, for instance, mechanical methods such as wire brush graining, brush graining which comprises graining with a nylon brush with pouring a slurry of abrasive particles, ball graining, graining through liquid honing and buff graining; chemical graining methods such as those in which HF,AlCℓ ₃ or HCℓ is used as an etchant; electrolytic graining in which nitric acid or hydrochloric acid is used as an electrolyte; or combined graining comprising combinations thereof, then optionally etched with an acid or alkali and anodized in an electrolyte such as sulfuric acid, phosphoric acid, oxalic acid, boric acid, chromic acid, sulfamic acid or a mixture thereof using a DC or AC current to form a strong passivation film on the surface of the aluminum plate. Such a passivation film per se makes the aluminum plate surface hydrophilic, but it is particularly preferred that the aluminum plate is optionally hydrophilized by subjecting it to a silicate (sodium silicate, potassium silicate) treatment as disclosed in U.S. Patent Nos. 2,714,066 and 3,181,461; a potassium fluorozirconate treatment as disclosed in U.S. Patent No. 2,946,638; a phosphomolybdate treatment as disclosed in U.S. Patent No. 3,201,247; and alkyl titanate treatment as disclosed in U.K. Patent No. 1, 108,559; a polyacrylic acid treatment as disclosed in German Patent No. 1,091,433; a polyvinyl phosphonic acid treatment as disclosed in German Patent No. 1,134,093 and U.K. Patent No. 1,230,447; a phosphonic acid treatment as disclosed in J.P. KOKOKU No. Sho 44-6409; a phytic acid treatment as disclosed in U.S. Patent No. 3,307,951; a combined treatment with a hydrophilic organic polymeric compound and a bivalent metal as disclosed in J.P. KOKAI Nos. Sho 58-16893 and Sho 58-18291; a treatment by means of an underlying coating of an water-soluble polymer having sulfonate groups as disclosed in J.P. KOKAI No. Sho 59-101651. Examples of other hydrophilization treatments are silicate electrodeposition treatments as disclosed in U.S. Patent No. 3,658,662. It is also preferred to use an aluminum plate which is subjected to a sealing treatment after graining and anodization treatments. Such a sealing treatment can be performed by immersing the aluminum plate in hot water or a hot aqueous solution containing an inorganic or organic salt or by means of a steam bath. Actinic Rays or Radiant Rays Light sources for actinic rays or radiant rays used in the present invention are, for instance, a mercury lamp, a metal halide lamp, a xenon lamp, a chemical lamp and a carbon arc lamp for actinic rays and electron rays, X-rays, ion beam and far ultraviolet rays for radiant rays. Preferred examples of light sources are g-rays, i-rays and Deep-UV rays for photoresists. In addition, a scanning exposure technique with a high energy density beam such as laser beam or electron rays can be employed in the invention. Examples of such laser beam sources are a He · Ne laser, an Ar laser, a Kr ion laser, a He · Cd laser and KrF excimer laser. Developer Examples of developers for the positive working light-sensitive composition of the present invention preferably include an aqueous solution of an inorganic alkali agent such as sodium silicate, potassium silicate, sodium hydroxide, potassium hydroxide, lithium hydroxide, tertiary sodium phosphate, secondary sodium phosphate, tertiary ammonium phosphate, secondary ammonium phosphate, sodium metasilicate, sodium bicarbonate or ammonia or an organic alkali agent such as tetraalkyl ammonium hydroxide. These alkaline agents may be used alone or in combination. The concentration thereof ranges from 0.1 to 10% by weight and preferably 0.5 to 5% by weight. These aqueous alkali solutions may optionally comprise a surfactant or an organic solvent such as an alcohol. The present invention will hereunder be explained in more detail with reference to the following non-limitative working Examples and the effects practically achieved by the present invention will also be discussed in detail. Examples 1 to 4 A 2S aluminum plate having a thickness of 0.24 mm was immersed in 10% aqueous solution of tertiary sodium phosphate maintained at 80 ° C for 3 minutes to degrease the same, grained with a nylon brush, etched with sodium aluminate solution for about 10 minutes and then desmutted with 3% aqueous solution of sodium hydrogen sulfate. The aluminum plate was then anodized at a current density of 2A/dm² for 2 minutes in 20% sulfuric acid solution to thus obtain an aluminum substrate. Four kinds of solutions, (A)-1 to (A)-4, of light-sensitive composition (hereunder referred to as "light-sensitive solutions") were prepared by changing the kinds of organopolysiloxane compounds used in the light-sensitive solution (A) having the following composition. Each of these light-sensitive solutions was applied onto the aluminum plate which had been anodized and dried at 100° C for 2 minutes to obtain the corresponding PS plates (A)-1 to (A)-4. The coated amount of the light-sensitive solution was 1.5 g/m² (weighed after drying) in all the PS plates. The organopolysiloxane compounds used in the light-sensitive solutions (A)-1 to (A)-4 are listed in Table I given below. A gray scale having a density difference of 0.15 was brought in close contact with the light-sensitive layer of each PS plate (A)-1 to (A)-4 and the layer was exposed to light from a 2 KW high pressure mercury lamp at a distance of 50 nm for 2 minutes. The exposed PS plates (A)-1 to (A)-4 were immersed in and developed with DP-4 (trade name; available from Fuji Photo Film Co., Ltd.) diluted 8 times with water for 60 seconds at 25 ° C to thus obtain positive images dyed clear blue. Example 5 The following light-sensitive solution (B) was applied onto a silicon wafer with a spinner and dried on a hot plate maintained at 90 ° C for 2 minutes. The thickness of the layer was 1.0 µm. The resultant light-sensitive layer was exposed to light with a scale down projection aligner (stepper) using monochromatic light of 436 nm and developed with 2.4% aqueous solution of tetramethylammonium hydroxide for 60 seconds to form a resist pattern. As a result, a good pattern having a line & space of 0.8µm were obtained. Example 6 A commercially available novolak type resist HPR-204 (available from Fuji Hunt Chemical Co., Ltd.) was applied onto a silicon wafer with a spinner and dried at 220 ° C for one hour to obtain an underlying coating. The thickness thereof was 2.0 µm. The following light-sensitive solution (C) was applied onto the underlying layer with a spinner and dried on a hot plate maintained at 90 ° C for 2 minutes to form a coated film having a thickness of 0.5 µm. Then, the resultant layer was irradiated with ultraviolet rays of 254 nm through a glass mask in a close contact manner, thereafter developed in the same manner as in Example 5. As a result, a pattern having a line & space of 0.7 in µm could be resolved. The lower resist was then etched by oxygen plasma etching using oxygen gas plasma (2.0 X 10⁻² Torr, RF 0.06 W/cm²) and correspondingly the portions of the lower resist which had not been covered with the resist pattern was completely disappeared. In other words, it was confirmed that this resist could be used as an upper resist in the double layer resist method. Examples 7 and 8 Two light-sensitive solutions (D)-1 and (D)-2 were prepared by changing the kinds of the organopolysiloxane compounds of the present invention used in the following light-sensitive solution (D) and applied onto the surface of the aluminum plate prepared in Examples 1 to 4. The plates were dried at 100° C for 2 minutes to thus obtain the corresponding PS plates (D)-1 and (D)-2. The amount of the solution coated was 1.5 g/m² (weighed after drying) for all the PS plates. The organopolysiloxane compounds of the present invention used in light-sensitive solutions (D)-1 and (D)-2 are listed in Table II given below. A gray scale having a density difference of 0.15 was brought into close contact with the light-sensitive layer of each PS plate (D)-1 or (D)-2 thus obtained and exposed to light and developed in the same manner as in Examples 1 to 4 to thus obtain a positive pattern colored clear blue.

Claims: A positive working light-sensitive composition comprising (a) a compound capable of generating an acid through irradiation with actinic rays or radiant rays and (b) an organic polysiloxane compound having linear one-dimensional, branched or ladder type two-dimensional and/or three-dimensional network structures, wherein the compound capable of generating an acid through irradiation with actinic rays or radiant rays is selected from the group consisting of: (1) oxadiazole derivatives and s-triazine derivatives represented by the following general formulas (XXI) and (XXII) respectively which are substituted with a trihalomethyl group: wherein Y represents a halogen atom, provided that three Y's may be the same or different; R₃₁ represents a substituted or unsubstituted aryl or alkenyl group; and R₃₂ represents R₃₁, -CY₃ or a substituted or unsubstituted alkyl group; (2) iodonium and sulfonium salts represented by the following general formulas (XXIII) and (XXIV) respectively: wherein Ar₁ and Ar₂ may be the same or different and each represents an aromatic group which may be substituted with alkyl, haloalkyl, cycloalkyl, aryl, alkoxy, nitro, carbonyl, alkoxycarbonyl, hydroxyl and/or mercapto groups and/or halogen atoms; R₃₃, R₃₄ and R₃₅ may be the same or different and each represents an alkyl group having 1 to 8 carbon atoms which may be substituted with alkoxy groups having 1 to 8 carbon atoms, carbonyl group and/or alkoxycarbonyl groups or an aryl group having 6 to 14 carbon atoms which may be substituted with alkoxy groups having 1 to 8 carbon atoms, alkyl groups having 1 to 8 carbon atoms, nitro group, carbonyl group, hydroxyl group and/or halogen atoms; and Z ⁻ represents BF₄⁻ , PF₆ ⁻ , AsF₆ ⁻ , SbF₆⁻ , C ℓ O₄⁻ or CF₃SO₃⁻ , provided that two of R₃₃, R₃₄ and R₃₅, and Ar₁ and Ar₂ may be bonded through a single bond or a substituent; (3) disulfone derivatives and imidosulfonate derivatives represented by the following general formulas (XXV) and (XXVI) respectively: Ar₃ - SO₂ - SO₂ - Ar₄ (XXV) wherein Ar₃ and Ar₄ may be the same or different and each represents a substituted or unsubstituted aryl group; R₃₆ represents a substituted or unsubstituted alkyl or aryl group and A represents a substituted or unsubstituted alkylene, alkenylene or arylene group; and wherein the organopolysiloxane compound (b) is selected from those obtained by hydrolyzing or alkoxylating a compound represented by the following general formula (I), (II), (III), (IV) or (V) or a combination thereof and then condensing the resultant product: R₁ - Si - (X)₃ wherein R₁ to R₇, R₉ to R₁₁, R₁₃ and R₁₄ may be the same or different and each represents a hydrogen atom or an alkyl, substituted alkyl, substituted aryl, alkenyl, substituted alkenyl, silyl, substituted silyl, siloxy or substituted siloxy group; R₈, R₁₂ and R₁₅ may be the same or different and each represents a single bond or a bivalent alkylene, substituted alkylene, arylene or substituted arylene group; and X represents a hydrolyzable group. The positive working light-sensitive composition of claim 1 wherein R₁ to R₇, R₉ to R₁₁, R₁₃ and R₁₄ each represents a hydrogen atom; an alkyl group having 1 to 10 carbon atoms which may be substituted with halogen atoms, alkoxy groups having 1 to 6 carbon atoms, aryl groups and/or aryloxy groups; a monocyclic or bicyclic aryl group which may be substituted with alkyl groups having 1 to 6 carbon atoms, alkoxy groups having 1 to 6 carbon atoms, halogen atoms, nitro group, phenyl group, carboxyl group, hydroxyl group, amido group, imido group and/or cyano group; a vinyl group which may be substituted with an aryl group; a silyl group which may be substituted with alkyl groups and/or aryl groups; or a substituted or unsubstituted siloxy group; R₈, R₁₂ and R₁₅ each represents a single bond, a linear, branched or cyclic alkylene group having 1 to 10 carbon atoms which may be substituted with halogen atoms, alkoxy groups having 1 to 6 carbon atoms and/or aryloxy groups having 6 to 10 carbon atoms; or a monocyclic or bicyclic arylene group which may be substituted with alkyl groups having 1 to 6 carbon atoms, alkoxy groups having 1 to 6 carbon atoms and/or halogen atoms; and X represents a halogen atom, an alkoxy group having 1 to 10 carbon atoms, an aryloxy group having 6 to 10 carbon atoms, an acyloxy group having 1 to 10 carbon atoms, an oxime group having 1 to 6 carbon atoms or an amido, ureido or amino group. The positive working light-sensitive composition of claim 1 wherein the organopolysiloxane compound (b) is selected from the group consisting of those having a structure composed of one or more repeating units represented by the following general formulas (VI) to (XX): wherein R₁₆ to R₁₉, R₂₁ to R₂₆, R₂₈ and R₂₉ may be the same or different and each has the same meanings as defined above in connection with R₁ to R₇, R₉ to R₁₁, R₁₃ and R₁₄; and R₂₀, R₂₇ and R₃₀ may be the same or different and each has the same meanings as defined above in connection with R₈, R₁₂ and R₁₅. The positive working light-sensitive composition of any one of claims 1 to 3 wherein the weight-average molecular weight of the organopolysiloxane compound is not less than 500. The positive working light-sensitive composition of claim 4 wherein the weight-average molecular weight of the organopolysiloxane compound ranges from 1,000 to 500,000. The positive working light-sensitive composition of any one of claims 1 to 5 wherein the amount of the compound capable of generating an acid ranges from 0.001 to 40% by weight on the basis of the total weight of the solid contents of the composition. The positive working light-sensitive composition of claim 6 wherein the amount of the compound capable of generating an acid ranges from 0.1 to 20% by weight on the basis of the total weight of the solid contents of the composition. The positive working light-sensitive composition of any one of claims 1 to 7 wherein it further comprises an alkali-soluble polymer. The positive working light-sensitive composition of claim 8 wherein the alkali-soluble polymer is selected from the group consisting of those carrying active hydrogen atoms having a pKa value of not more than 11. The positive working light-sensitive composition of claim 9 wherein the alkali-soluble polymer is selected from the group consisting of those carrying phenolic hydroxide, carboxyl, imido, sulfonamido, N-sulfonylamido, N-sulfonylurethane and/or active methylene groups. The positive working light-sensitive composition of claim 8 wherein the alkali-soluble polymer is an alkali-soluble novolak type phenol resin. The positive working light-sensitive composition of any one of claims 8 to 11 wherein the amount of the alkali-soluble polymer ranges from 10 to 90% by weight based on the total weight of the solid contents of the light-sensitive composition. The positive working light-sensitive composition of claim 12 wherein the amount of the alkali-soluble polymer ranges from 30 to 80% by weight based on the total weight of the solid contents of the light-sensitive composition. The positive working light-sensitive composition of any one of claims 1 to 13 wherein it comprises dyes, pigments, plasticizers and/or compounds capable of enhancing the acid generating efficiency of the compound capable of generating an acid. The positive working light-sensitive composition of claim 14 wherein the acid generating efficiency enhancing compound is selected from anthracene, phenanthrene, perylene, pyrene, chrycene, 1,2-benzanthracene, coronene, 1,6-diphenyl-1,3,5-hexatriene, 1,1,4,4,-tetraphenyl-1,3-butadiene, 2,3,4,5-tetraphenyl furan, 2,5-diphenylthiophene, thioxanthone, 2-chlorothioxanthone, phenothiazine, 1,3-diphenyl pyrazoline, 1,3-diphenyl isobenzofuran, xanthone, benzophenone, 4-hydroxybenzophenone, anthrone, ninhydrin, 9-fluorenone, 2,4,7-trinitrofluorenone, indanone, phenanthraquinone, tetralone, 7-methoxy-4-methylcoumalin, 3-keto-bis(7-diethylaminocoumalin), Michler's ketone and ethyl Michler's ketone. The positive working light-sensitive composition of claim 14 or 15 wherein the molar ratio of the acid generating efficiency enhancing compound to the compound capable of generating an acid ranges from 0.01/1 to 20/1. The positive working light-sensitive composition of any one of claims 1 to 16 wherein it comprises a cyclic anhydride and/or a filler. The positive working light-sensitive composition of claim 17 wherein the amount of the cyclic anhydride ranges from 1 to 15% by weight on the basis of the total weight of the composition.

Inventors: AOAI, TOSHIAKI C/O FUJI PHOTO FILM CO. LTD., AOTANI, YOSHIMASA C/O FUJI PHOTO FILM CO. LTD., SUGIMOTO, MICHIKO C/O FUJI PHOTO FILM CO. LTD., UMEHARA, AKIRA C/O FUJI PHOTO FILM CO. LTD.
Applicants: FUJI PHOTO FILM CO., LTD.
Application year: 1989
Main classification: G03F7
IPC codes: G03F7, H01L21