Preparation of silicon-containing polyimide precursor and cured polyimides obtained therefrom

Abstract: A process for the production of silicon-containing polyimides precursors comprising reacting a silicon-containing polyimide precursor having a logorithmic viscosity number of from 0.05 to 5 dl/g (measured at a temperature of 30 ± 0.01°C at a concentration of 0.5 g/dl), which process comprises reacting: A¹ mol of a fluorine-containing diacid anhydride of the formula: (in which m is 0 or 1); A² mol of a diacid anhydride of the formula: (in which R¹ is a tetravalent carbocyclic aromatic group or heterocyclic group); B¹ mol of a fluorine-containing diamine of the formula: (in which each n is 0 or 1); B² mol of a diamine of the formula: H₂N - R² - NH₂ (IV) (in which R² is an aliphatic group containing at least two carbon atoms, an alicyclic group, an araliphatic group, a carbocyclic aromatic group, a heterocyclic group or a polysiloxane group); and C mol of an aminosilane of the formula: in which s is an integer from 1 to 4; each R⁴ is a C₁-C₆ alkyl group, a phenyl group, or an alkyl-substituted phenyl group containing from 7 to 12 carbon atoms; each X is a halogen atom or an alkoxy or acetoxy group; and k is from 1 to 3); the ratios of A¹, A², B¹, B² and C meeting the requirements of formulae (VI), (VII), and (VIII) below:

Description: The present invention relates to the production of silicon-containing polyimieds of low hydroscopicity, and precursors therefor. More particularly, the invention relates to the production of silicon-containing polyimide precursors, having an appropriate viscosity for application, and to cured silicon-containing polyimides obtained therefrom, having low hydroscopicity and high heat resistance and which can form a coating having good adhesion to a substrate. Polyimide resins, in view of their heat resistance are widely used as protective or insulating materials for electronic equipment, as film-form adhesives, or as structural materials. In some techniques, polyimide resins are combined with other inorganic materials to form heat resistant films, coatings or adhesives. In that case, adhesion to the base materials is required, and in order to improve adhesion, the use of various copolymers with silicon compounds has been suggested. For example, such copolymers are disclosed in Japanese Laid-Open Patent Applications Nos. 143328/1982, 7473/1983, and 13631/1983, and Japanese Patent Publications Nos. 18372/1983, 32162/1983, and 32163/1983. We have also suggested such copolymers in Japanese Laid-Open Patent Application No. 287926/1986, and in Japanese Patent Application No. 162018/1987. One of the weak points of polyimide resins is that their hygroscopicity is high, leading to deterioration in electrical properties. In order to lower the hygroscopicity, various fluorine-containing polyimides have been suggested as described in Japanese Laid-Open Patent Applications Nos. 149916/1983, 180530/1983, 189122/1984, 104129/1985, etc. The hygroscopicity of the fluorine-containing polyimides described in Japanese Laid-Open Patent Applications Nos. 149916/1983, 180530/1983, 189122/1984, and 104129/1985 mentioned above is decreased several times (up to about 1/10) that of polyimides free from fluorine. However, such compounds have the disadvantages that not only do they reduce adhesion to glass or the like but they also have a low glass transition point so that their thermal expansion coefficient at temperatures above the glass transition point is high thereby limiting the range of their application. Some compounds described in Japanese Laid-Open Patent Applications Nos. 143328/1982, 7473/1983, and 13631/1983, and Japanese Patent Publications Nos. 18372/1983, 32162/1983, and 32163/1983, and Japanese Laid-Open Patent Application No. 287926/1986 mentioned above have reduced hygroscopicity, but the reduction in hygroscopicity is not so marked as for the fluorine-containing compounds, and they also have such disadvantages that their glass transition point is low, and the thermal expansion coefficient at temperatures above the glass transition point is conspicuously high. It is a object of the present invention is to provide a process for the production of silicon-containing polyimide precursors which have a viscosity appropriate for film formation, for example by coating, and which can form, on baking a coated film thereof, a coating that has a thermal expansion coefficient similar to that of common polyimides, has low hygroscopicity, and possesses good adhesion. According to the invention there is provided a process for producing a silicon-containing polyimide precursor havng a logorithmic viscosity number of from 0.05 to 5 dl/g (measured at a temperature of 30 ± 0.01°C at a concentration of 0.5 g/dl in a solvent which is N-methyl-2-pyrrolidone, N,N-diemthyl-acetamide or N,N-dimethyl formamide), which process comprises reacting: A¹ mol of a fluorine-containing diacid anhydride of the formula: (in which m is 0 or 1); A² mol of a diacid anhydride of the formula: (in which R¹ is a tetravalent carboxcylic aromatic group or heterocyclic group such that the dianhydide is: pyromellitic acid dianhydride, 3,3',4,4'-benzophenone-tetracarboxylic acid dianhydride, 2,3,3',4'-benzophenone-tetracarboxylic acid dianhydride, 2,2',3,3'-benzophenone-tetracarboxylic acid dianhydride, 3,3',4,4'-diphenyl-tetracarboxylic acid dianhydride, 2,2',3,3'-diphenyl-tetracarboxylic acid dianhydride, bis(2,3-dicarboxyphenyl)-methane dianhydride, bis(3,4-dicarboxyphenyl)methane dianhydride, 2,2-bis(2,3-dicarboxyphenyl)propane dianhydride, bis(3,4-dicarboxyphenyl)ether dianhydride, bis(3,4-dicarboxyphenyl)sulfone dianhydride, N,N-(3,4-dicarboxylphenyl)-N-methylamine dianhydride, 3,3',4,4'-tetracarboxybenzoyloxybenzene dianhydride, 2,3,6,7-naphthalenetetracarboxylic acid dianhydride, 1,2,5,6-naphthalenetetracarboxylic acid dianhydride, thiophene-2,3,4,5-tetracarboxylic acid dianhydride, pyrazine-2,3,5,6-tetracarboxylic acid dianhydride, pyridine-2,3,5,6-tetracarboxylic acid dianhydride, or 2,3,3',4'-biphenyltetracarboxylic acid dianhydride): B¹ mol of a fluorine-containing diamine of the formula:- (in which each n is 0 or 1); B² mol of a diamine of the formula: H₂N - R² - NH₂ (IV) (in which R² is an aliphatic group containing at least two carbon atoms, an alicyclic group, an araliphatic group, a carbocylic aromatic group, a heterocyclic group or a polysiloxane group such that the diamine is: o-, m- and p-phenylenediamine, a diaminotoluene (e.g., 2,4-diaminotoluene), 1,4-diamino-2-methoxybenzene, 2,5-diaminoxylenes, 1,3-diamino-4-chlorobenzene, 1,4-diamino-2,5-dichlorobenzene, 1,4-diamino-2-boromobenzene, 1,3-diamino-4-isopropylbenzene, N,N'-diphenyl-1,4-phenylenediamine, 4,4'-diaminodiphenyl-2,2-propane, 4,4'-diaminodiphenylmethane, 2,2'-diaminostilbene, 4,4'-diaminostilbene, 4'4'-diaminodiphenyl ether, 4,4'-diaminodiphenyl thioether, 4,4'-diaminodiphenyl sulfone, 3,3'-diaminodiphenyl sulfone, 4,4'-diaminobenzoic acid phenyl ester, 2,2'-diaminobenzophenone, 4,4'-diaminobenzophenone, 4,4'-diaminobenzyl, 4-(4'-aminophenylcarbamoyl)-aniline, bis(4-aminophenyl)-phosphine oxide, bis(4-aminophenyl)-methyl-phosphine oxide, bis(3-aminophenyl)-methylsulfine oxide, bis(4-aminophenyl)-phenylphosphine oxide, bis(4-aminophenyl)-cyclohexylphosphine oxide, N,N-bis(4-aminophenyl)-N-phenylamine, N,N-bis(4-aminophenyl)-N-methylamine, 4,4'-diaminodiphenyl urea, 1,8-diaminonaphthalene, 1,5-diaminonaphthalene, 1,5-diaminoanthraquinone, diaminofluoranthene, bis(4-aminophenyl)-diethylsilane, bis(4-aminophenyl)-dimethylsilane, bis(4-aminophenyl)-tetramethyldisiloxane, 3,4'-diaminodiphenyl ether, benzidine, 2,2'-dimethylbenzidine, 2,2-bis(4-(4-aminophenoxy)phenyl]-propane, bis[4-(4-aminophenoxy)phenyl]sulfone, 4,4'-bis(4-aminophenyoxy)biphenyl, 1,4-bis(4-aminophenoxy)benzene, 1,3-bis(4-aminophenoxy)benzene, 2,6-diaminopyridine, 2,4-diaminopyrimidine, 2,4-diamino-s-triazine, 2,7-diamino-dibenzofuran, 2,7-diaminocarbazole, 3,7-diaminophenothiazine, 2,5-diamino-1,3,4-thiadiazole, and 2,4-diamino-6-phenyl-s-triazine, dimethyldiamine, trimethylenediamine, tetramethylenediamine, hexamethylenediamine, heptamethylenediamine, heptamethylenediamine, octamethylenediamine, nonamethylenediamine, decamethylenediamine, 2,2-dimethylpropylenediamine, 2,5-dimethylhexamethylenediamine, 2,5-dimethylheptamethylenediamine, 4,4-dimethylheptamethylenediamine, 3-methylheptamethylenediamine, 3-methoxyheptamethylenediamine, 5-methylnonamethylenediamine, 2,11-diaminododecane, 1,12-diaminooctadecane, 1,2-bis(3-aminopropoxy)-ethane, N,N'-dimethylethylenediamine, N,N'-diethyl-1,3-diaminopropane, N,N'-dimethyl-1,6-diaminohexane, a diamine of the formula: H₂N(CH₂)₃O(CH₂)₂O(CH₂)₃NH₂, a diamine of the formula H₂N(CH₂)₃NH₂, 1,4-diaminocyclohexane, 4,4'-diaminodicyclohexylmethane, 1,4-bis(2-methyl-4-aminopentyl) benzene, or 1,4-bis(aminopentyl)benzene, 1.3-bis(aminomethyl ) benzene, or 1,4-bis(aminomethyl)benzene, or a diamine of the formula: (in which l is from 1 to 100); C mol of an aminosilane of the formula: (in which R³ is a group -(CH₂) s , -(CH₂) s in which s is an integer from 1 to 4; each R⁴ is a C₁-C₆ alkyl group, a phenyl group, or an alkyl-substituted phenyl group containing from 7 to 12 carbon atoms; each X is a halogen atom or an alkoxy or acetoxy group; and k is from 1 to 3, such that the aminosilane is: aminomethyl-di-n-propoxy-methylsilane, (β-aminoethyl)-di-n-propoxy-methylsilane, (β-aminoethyl)-diethoxy-phenylsilane, (β-aminoethyl)-tri-n-propoxysilane, (β-aminoethyl)-dimethoxy-methylsilane, (γ-aminopropyl)-di-n-propoxy-methylsilane, (γ-aminopropyl)-di-n-butoxy-methylsilane, (γ-aminopropyl)-trimethoxysilane, (γ-aminopropyl)-triethoxysilane, (γ-aminopropyl)-di-n-pentoxy-phenylsilane, (γ-aminopropyl)-methoxy-n-propoxy-methylsilane, (δ-aminobutyl)-dimethoxy-methylsilane, (3-aminophenyl)-di-n-propoxy-methylsilane, (4-aminophenyl)-tri-n-propoxysilane, [β-(4-aminophenyl)-ethyl]-diethoxy-methylsilane, [β-(3-aminophenyl)-ethyl]-di-n-propoxy-phenylsilane, [γ-(4-aminophenyl)-propyl]-di-n-propoxy-methylsilane. (γ-(4-aminophenoxy)-propyl]-di-n-propoxy-methylsilane. [γ-(3-aminophenoxy)-propyl]-di-n-butoxy-methylsilane, (γ-aminopropyl)-methyl-dimethoxysilane, (γ-aminopropyl)-methyl-diethoxysilane. (γ-aminopropyl)-ethyl-di-n-propoxysilane, 4-aminophenyl-trimethoxysilane, 3-aminophenyltrimethoxysilane, 4-aminophenyl-methyl-di-methoxysilane, 3-aminophenyl-di-methyl-methoxysilane, or 4-aminophenyl-tri-ethoxysilane; the ratios of A¹, A², B¹, B² and C meeting the requirements of formulae (VI), (VII), and (VIII) below: whereby to produce compounds of formulae (X), (XI), and (XII) as defined below. The values of B¹, B² and C are preferably those given by the formula: Preferably, R³ is a phenylene group which is in the form of at least one of the O-, m- or p-isomers. A silicon-containing polyimide can be produced by baking a solution containing the silicon-containing polyimide precursor at 50 to 500°C to evaporate solvent therefrom and to cure and cross-link the material. Examples of fluorine-containing diacid anhydrides of formula (I) include 2,2-bis(3,4-dicarboxyphenyl)-hexfluoropropane dianhydride, 2-(3,4-dicarboxyphenyl)-2-[4-(3,4-dicarboxyphenyl)phenoxy]-hexafluoropropane dianhydride, 2,2-bis[4-(3,4-dicarboxyphenyl)phenoxy]-hexafluoropropane, 2,2-bis[3-(3,4-dicarboxyphenyl)phenoxy]-hexafluoropropane, and 2,2-bis[4-(2,3-dicarboxyphenyl)phenoxy]-hexafluoropropane. As the fluorine-containing diamine represented by formula (III), the following compounds may be exemplified: 2,2-bis(4-aminophenyl)hexafluoropropane, 2,2-bis(3-aminophenyl)hexafluoropropane, 2,2-bis{4-(4-aminophenoxy)phenyl}hexafluoropropane, 2-(3-aminophenyl)-2-{4-(4-aminophenoxy)phenyl}hexafluoropropane, 2,2-bis{4-(3-aminophenoxy)phenyl}hexafluoropropane, 2,2-bis{3-(4-aminophenoxy)phenyl}hexafluoropropane, and 2,2-bis{3-(3-aminophenoxy)phenyl}hexafluoropropane. Preferable solvents that are used for reacting the raw material compounds in the present invention (hereinafter somtimes referred to as "reaction solvent.") are N-methyl-2-pyrrolidone, N,N-dimethylacetamide, N,N-dimethylformamide, dimethylsulfoxide, tetramethylurea, pyridine, dimethyl sulfone, hexamethylenephosphoramide, methylformamide, N-acetyl-2-pyrrolidone, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monobutyl ether, diethylene glycol monomethyl ether, diethylene glycol dimethyl ether, cyclopentanone, cyclohexanone, cresol, N,N-diethylacetamide, N,N-dimethylmethoxyacetamide, tetrahydrofuran, N-acetyl-2-pyrrolidone, and N-methyl-ε-caprolactam, tetrahydrothiophene dioxide (sulpholane). This reaction can be carried out in a solvent mixture obtained by mixing organic solvents as mentioned above. The above preferable organic solvents may be diluted with other non-protonic (neutral) organic solvent, for example, aromatic, alicyclic, or aliphatic hydrocarbons or their chlorinated derivatives (e.g., benzene, toluene, xylenes, cyclohexane, pentane, petroleum ether, and methylene chloride), or dioxane. A¹ mol of a fluorine-containing diacid anhydride represented by formula (I), A² mol of a diacid anhydride represented by formula (II), B¹ mol of a fluorine-containing diamine represented by formula (III), B² mol of a diamine represented by formula (IV), and C mol of an aminosilane represented by formula (V) are reacted in a reaction solvent. In this case, it is preferable that A¹, A², B¹, B², and C are in such ranges that the relationships given by formulae (VI) to (VIII) are established. Formula (VI) indicates the required amount of the fluorine-containing compound to provide a polyimide low in hygroscopicity, and if the amount falls outside the given range, the effect lowers. Formula (VII) indicates the range that will provide the product with high adhesiveness, and in particular this range will provide the product with high adhesiveness to metal compounds. Formula (VIII) indicates the required lowest amount of the aminosilane that will exhibit high adhesiveness to silicon compounds, and in particular the range indicated by the formula (IX) is effective in suppressing an increased in the thermal expansion coefficient due to the fluorine compound. The reaction solvent is used preferably in an amount of 40 wt. % or more based on the total amount of the solvent and the raw materials. If the amount of the reaction solvent is less than that, in some cases, the stirring operation becomes difficult. Preferably the reaction is carried out at 0 °C to 80 °C. Preferably the reaction time is 0.2 to 40 hours. With respect to the addition order of the reaction raw materials to the reaction system, all of the tetracarboxylic acid dianhydride, the diamine and the aminosilane may be added to the reaction solvent simultaneously, or after part or all of the former two compounds may be reacted previously, then the remaining parts of said two compounds and/or the aminosilane may be reacted with the resulting product. If the aminosilane is added last, a polymer having a high molecular weight is liable to be obtained. The tetracarboxylic acid dianhydrides include at most two types, that is, fluorine-containing compounds represented by formula (I), and compounds free from fluorine represented by formula (II), and the diamines include at most two types, that is, fluorine-containing compounds represented by formula (III) and diamines free from fluorine represented by formula (IV), and their reactions may be carried out in any order. The form of the bonding includes at most four types, and they may be arranged in the form of blocks or in random form. Further, when several compounds falling in the same type are used, the number of the forms of the bonding increases, and in that case also the same can be applied to the arrangement. Aminosilanes are arranged to the bond ends of them. In the reaction according to the present method, it is considered that compounds represented by the following formulae (X), (XI), and (XII) are yielded. R¹, R², R³, R⁴, X, k, m and n have the same meanings as defined above, and m₁, m₂, and m₃ each are 0 or a positive integer. In this way, a silicon-containing polyimide precursor can be obtained that has an appropriate logarithmic viscosity number of 0.05 to 5 dℓ/g, that is, has an appropriate molecular weight, and is soluble in solvents. If the logarithmic viscosity number is less than 0.05 dℓ/g, the spread state of the coating liquid is not good, and therefore the coating cannot be well formed, while if the logarithmic viscosity number is over 5 dℓ/g, the silicon-containing polyimide precursor becomes difficult to dissolve or becomes insoluble, and is hardly used in practice. When a solution containing the obtained silicon-containing polyimide precursor is baked at 50 to 500 °C, preferably 200 to 400 °C, for 0.5 to about 2 hours, the solvent can be evaporated, and the precursor can be crosslinked and cured. In this reaction, the amide acid in the polyimide precursor is dehydrated and cyclized so that imide linkages may be formed, and, at the same time, X that is a hydrolyzable group at the end of the molecule is hydrolyzed and then undergoes a condensation reaction, thereby forming a product having a high molecular weight to form a tough coating. It is considered that the acid anhydride present at the end of the polyamide acid reacts with water that has been produced or water present in the atmosphere to form carboxylic acids. Only when the carboxylic acids and Si present in the polymer are in the ranges stipulated by formulae (VII) and (VIII) mentioned above, the resulting coating is excellent in adhesion to different base materials such as silicon compounds, metals, and inorganic compounds or adhesion between such coatings, and when the fluorine-containing compound is present in the range stipulated by formula (VI) mentioned above, a coating low in hygroscopicity can be formed. It will now be described how to use the precursor obtained according to the invention. In most cases, since the precursor produced according to the present invention is used in the state of a solution containing the precursor in a solvent, for example, in the form of a varnish, it is good that the solution obtained according to the present invention is used as it is, or is used after condensing or diluting it. As a diluting solvent, can be used the same solvent as the reaction solvent. When a molded article is formed from a solution containing a precursor obtained in accordance with the present invention, any of known processes may be employed. For example, after the precursor solution is cast on a glass plate, a copper plate, an aluminum plate or the like, it is heated so that the solvent is removed and that the cross-linking takes place due to the siloxane bonding to form a hard tough coating. If such a procedure is repeated successively, a composite material having laminated layers can be formed, and if a varnich obtained according to the present invention is applied as an adhesive between different materials, and is baked, a composite material having laminated layers can also be obtained. If a filler or glass fiber is impregnated with such a varnish, and the varnish is baked and cured, it is possible to obtain a laminated material having a reinforced film. Although the baking conditions vary depending on the type of the solvent, the thickness of the coating, etc., such baking conditions are sufficient if the baking temperature is 50 to 500 °C, preferably 200 to 400 °C, the baking period is 0.5 to about 2 hours. The silicon-containing polyimide cured material obtained by the process according to the present invention is not only excellent in heat resistance, mechanical properties, electrical properties, and adhesion, but also, taking into consideration that it is a polyimide, low in hygroscopicity, and it can be expected that it is used as coating agents for glasses, ceramics, silicon wafers, various metal compounds, and as liquid crystal orientation films, adhesives, machine parts, various molded articles, fiber impregnated structural members, films, fibers. Since the precursor obtained according to the present process has an appropriate logarithmic viscosity number, the solution has also an appropriate viscosity, and the application can be carried out favorably. Since the applied coating obtained by the process of the present invention has fluorine atoms in the molecule, not only the weak point of polyimides that they are high in hygroscopicity has been suppressed, but also the applied coating exhibits high adhesiveness to glasses, ceramics, silicon wafers, or various metals when the mixing ratio of the raw materials comprising diacid anhydrides, diamines, and an aminosilane is kept within specified ranges. Further, by increasing the amount of the aminosilane, it is possible to suppress to a certain extent the extreme increase of the thermal expansion coefficient due to the fluorine compound, and such a property is preferable not only for a laminated material involving inorganic compounds, but also for various coating agents, liquid crystal orientation films, adhesive agents, machine parts, various molded articles, fiber impregnated structural parts, films, or fiber materials. EXAMPLES The present invention will now be described in more detail with reference to Examples and Comparative Examples, but it is needless to say the present invention is not limited to the Examples. Example 1 After the inside of a 1-ℓ flask equipped with an agitator, a dropping funnel, a thermometer, a condenser, and a nitrogen gas replacing apparatus was replaced with nitrogen gas, 500 g of dehydrated and purified N-methyl-2-pyrrolidone (hereinafter abbreviated to NMP), 12.56 g (0.116 mol) of p-phenylenediamine (hereinafter abbreviated to p-PDA), and 77.38 g (0.174 mol) of 2,2-bis(3,4-dicarboxyphenyl)hexafluoropropane dianhydride (hereinafter abbreviated to 6FDA) were charged into the flask, and the reaction was effected at 30 to 35 °C for 7 hours with stirring to form a uniform solution. 19.83 g (0.0930 mol) of aminophenyltrimethoxysilane (100 % were in the form of p-isomer; hereinafter abbreviated to APMS) were added to the solution, and the reaction was further effected at the same temperature for 2 hours thereby producing a silicon-containing polyimide precursor solution according to the present process that was a yellow transparent liquid. The logarithmic viscosity number of the precursor measured in NMP was 0.33 dℓ/g. Example 2 In the similar way to that used in Example 1, and using the similar apparatus to that used in Example 1, 49.54 g (0.103 mol) of 2,2-bis{4-(4-aminophenoxy)phenyl}hexafluoropropane (hereinafter abbreviated to HFBAPP), 30.67 g (0.144 mol) of APMS (100 % were in the form of p-isomer), and 44.80 g (0.205 mol) of pyromellitic acid dianhydride (hereinafter abbreviated to PMDA) were charged into 500 g of NMP, and the reaction was effected at 35 to 40 °C for 5 hours thereby producing a silicon-containing polyimide precursor solution according to the present process that was a pale yellow transparent liquid. The logarithmic viscosity number of the precursor measured in NMP was 0.15 dℓ/g. Example 3 In the similar way to that used in Example 1, and using the similar apparatus to that used in Example 1, 13.04 g (0.0270 mol) of HFBAPP and 14.61 g (0.135 mol) of p-PDA were charged into 500 g of NMP, then 63.62 g of 3,3′,4,4′-biphenyltetracarboxylic acid dianhydride (hereinafter abbreviated to BPDA) were added thereto, and then after the reaction was carried out at 30 to 35 °C for 10 hours, 18.45 g (0.0865 mol) of APMS (45 % were in the form of m-isomer, and 55 % were in the form of p-isomer) were added thereto thereby producing a silicon-containing polyimide precursor solution according to the present process that was a yellow transparent liquid. The logarithmic viscosity number measured in NMP was 0.57 dℓ/g. Example 4 In the similar way to that used in Example 1, and using the similar apparatus to that used in Example 1, 34.79 g (0.0721 mol) of HFBAPP were dissolved in 500 g of NMP, then 32.02 g (0.0721 mol) of 6FDA were added thereto, and then after the reaction was effected at 25 to 30 °C for 7 hours, 26.15 g (0.123 mol) of APMS (45 % were in the form of m-isomer, and 55 % were in the form of p-isomer) and 32.02 g (0.0721 mol) of 6FDA were added, the reaction was effected at the same temperature for 5 hours thereby producing a silicon-containing polyimide precursor solution according to the present process that was a yellow transparent liquid. The logarithmic viscosity number of the precursor measured in NMP was 0.52 dℓ/g. Example 5 In the similar way to that used in Example 1, and using the similar apparatus to that used in Example 1, 4.83 g (0.0100 mol) of HFBAPP and 4.45 g (0.0100 mol) of 6FDA were charged into 500 g of N,N-dimethylacetamide, and after the reaction was effected at 25 to 30 °C for 2 hours, 28.09 g (0.140 mol) of 4,4′-diaminodiphenyl ether (hereinafter abbreviated to DDE), and 48.44 g (0.150 mol) of 3,3′,4,4′-benzophenonetetracarboxylic acid dianhydride were added thereto, the reaction was effected at the same temperature for 6 hours. Thereafter, 2.44 g (0.0110 mol) of 3-aminopropyltriethoxysilane were added thereto, and the reaction was effected at the same temperature for 2 hours thereby producing a silicon-containing polyimide precursor solution according to the present process that was yellow transparent liquid. The logarithmic viscosity number of the precursor measured in N,N-dimethylacetamide was 1.7 dℓ/g. Example 6 In the similar way to that used in Example 1, and using the similar apparatus to that used in Example 1, 11.40 g (0.0236 mol) of HFBAPP, 33.56 g (0.0866 mol) of 2,2-bis{4-(4-aminophenoxy)phenyl}propane, and 37.07 g (0.126 mol) of BPDA were charged into 500 g of NMP, and after the reaction was effected at 25 to 30 °C for 15 hours, and then 4.22 g (0.0220 mol) of 3-aminopropylmethyldiethoxysilane were added thereto, the reaction was effected at 50 °C for 3 hours thereby producing a silicon-containing polyimide precursor according to the present invention that was a yellow transparent liquid. The logarithmic viscosity number of the precursor measured in NMP was 1.3 dℓ/g. Example 7 In the similar way to that used in Example 1, and using the similar apparatus to that used in Example 1, 11.10 g (0.0230 mol) of HFBAPP, 33.92 g (0.0921 mol) of 4,4′-bis(4-aminophenoxy)biphenyl, and 10.22 g (0.0230 mol) of 6FDA were charged into 500 g of N,N-dimethylformamide, and after the reaction was effected at 25 to 30 °C for 2 hours, 25.10 g (0.115 mol) of PMDA were added thereto, and the reaction was effected at the same temperature for 8 hours. Thereafter, 7.86 g (0.0368 mol) of APMS (78 % were in the form of m-isomer, and 22 % were in the form of p-isomer) were added, and the reaction was effected at the same temperature for 3 hours thereby producing a silicon-containing polyimide precursor according to the present process that was a pale yellow transparent liquid. The logarithmic viscosity number of the precursor measured in N,N-dimethylformamide was 0.82 dℓ/g. Comparative Example 1 In the similar way to that used in Example 1, and using the similar apparatus to that used in Example 1, 45.95 g (0.0953 mol) of HFBAPP and 42.29 g (0.0952 mol) of 6FDA were charged into 500 g of NMP, and the reaction was effected at 30 to 35 °C for 10 hours thereby producing a pale yellow transparent polyimide precursor solution. The logarithmic viscosity number of the precursor measured in NMP was 1.6 dℓ/g. Comparative Example 2 In the similar way to that used in Example 1, and using the similar apparatus to that used in Example 1, 26.76 g (0.134 mol) of DDE and 58.31 g (0.267 mol) of PMDA were charged into 500 g of NMP, then the reaction was effected at 20 to 25 °C for 7 hours, and after 39.92 g (0.187 mol) of APMS (78 % were in the form of m-isomer, and 22 % were in the form of p-isomer) were added thereto, and the reaction was effected at the same temperature for 3 hours thereby producing a yellow transparent polyimide precursor solution. The logarithmic viscosity number of the precursor measured in NMP was 0.20 dℓ/g. Comparative Example 3 In the similar way to that used in Example 1, and using the similar apparatus to that used in Example 1, 17.28 g (0.160 mol) of p-PDA, and 70.96 g (0.160 mol) of 6FDA were charged into 500 g of NMP, and the reaction was effected at 30 to 35 °C for 10 hours thereby producing a yellow transparent polyimide precursor solution. The logarithmic viscosity number of the precursor measured in NMP was 1.8 dℓ/g. For reference, the amounts of the raw materials used in Examples 1 to 7 and Comparative Examples 1 to 3, A¹, A², B¹, B², and C mols, and the values of are given in Table 1. Example 8 Each of the varnishes synthesized in Examples 1 to 7 and Comparative Examples 1 to 3 was formed into a coating, and the following physical properties were measured. (1) Measurement of the Hygroscopic Coefficient Each silicon wafer was coated by using a spinner with each varnish, and it was baked in an electric oven at 100 °C for 1 hour, then at 200 °C for 1 hour, and then at 350 °C for 1 hour to form a coating having a coating thickness of 4 to 5 µm. Then after it was allowed to stand at a temperature of 23 ± 2 °C and a relative humidity of 50 to 60 % for 24 hours, it was dried again in the electric oven at 120 °C for 1 hour. Then after it was cooled to room temperature in a desiccator, it was weighed, and the weight of the silicon wafer that had been previously measured was subtracted from the obtained weight to determine the weight (W₀) of the coating. After this silicon wafer whose one surface was coated with the polyimide coating was allowed again to stand at a temperature of 23 ± 2 °C, and a relative humidity of 50 to 60 % for 3 days, the weight (W) was measured, and the hygroscopic coefficient was determined by the formula: The results are shown in Table 2. (2) Measurement of the Adhesion Each varnish was applied onto each slide glass, each aluminum plate, and each copper plate by a spinner, the baking was carried out at 100 °C for 1 hour, and then at 300 °C for 1 hour to form a 1-µm to 2-µm coating. To test the adhesion between coatings that are of the same type, each of the same varnishes was applied on the aluminum plate having the thus formed coating of the same varnish, and the baking was carried out under the same conditions as above to form a coating having laminated layers. Cuts were formed in the resulting coating so that squares measuring 2 mm on side might be formed, and an adhesive cellophane tape was stuck thereon and then was removed immediately. The number of the square pieces of the coating removed together with the adhesive cellophane tape per 100 square pieces of the coating before the removal of the tape is shown in Table 2. (3) Measurement of the Thermal Expansion Coefficient After each of the varnishes was uniformly applied on each polyester film by a coater, it was dried at 100 °C for 1 hour in a dryer to remove most of the solvent thereby forming a film. This film was removed from the polyester film, and after the circumference of the film was fixed between two iron plates, it was baked in an electric oven having a nitrogen atmosphere at 200 °C for 1 hour, and then at 350 °C for 1 hour thereby producing a polyimide film having a film thickness of 30 to 50 µm. The obtained film was placed in a nitrogen atmosphere in a thermomechanical tester (TM-7000) (manufactured by Shinku Riko Kabushiki-Kaisha), the temperature was raised from room temperature to 450 °C, and the change in the length of the film was measured to determine the thermal expansion coefficient (linear expansion coefficient). The average value of the thermal expansion coefficient at 30 to 450 °C was determined. The results are shown in Table 2.

Claims: A process for producing a silicon-containing polyimide precursor havng a logarithmic viscosity number of from 0.05 to 5 dl/g (measured at a temperature of 30 ± 0.01°C at a concentration of 0.5 g/dl in a solvent which is N-methyl-2-pyrrolidone, N,N-dimethylacetamide or N,N-dimethylformamide), which process comprises reacting at a temperature of from 0 to 80°C for a period of from 0.2 to 40 hours: A¹ mol of a fluorine-containing diacid anhydride of the formula: (in which m is 0 or 1); A² mol of a diacid anhydride of the formula: in which R¹ is a tetravalent carbocylic aromatic group or a heterocyclic group such that the dianhyride is pyromellitic acid dianhydride, 3,3,,4,4'-benzophenone-tetracarboxylic acid dianhydride, 2,3,3',4'-benzophenone-tetracarboxylic acid dianhydride, 2,2',3,3'-benzophenone-tetracarboxylic acid dianhydride, 3,3',4,4'-diphenyl-tetracarboxylic acid dianhydride, 2 , 2',3,3'-diphenyl-tetracarboxylic acid dianhydride, bis(2,3-dicarboxyphenyl)-methane dianhydride, bis(3,4-dicarboxyphenyl)methane dianhydride, 2,2-bis(2,3-dicarboxyphenyl)propane dianhydride, bis(3,4-dicarboxyphenyl)ether dianhydride, bis(3,4-dicarboxyphenyl)sulfone dianhydride, N,N-(3,4-dicarboxylphenyl)-N-methylamine dianhydride, 3,3',4,4'-tetracarboxybenzoyloxybenzene dianhydride, 2,3,6,7-naphthalenetetracarboxylic acid dianhydride, 1,2,5,6-naphthalenetetracarboxylic acid dianhydride, thiophene-2,3,4,5-tetracarboxylic acid dianhydride, pyrazine-2,3,5,6-tetracarboxylic acid dianhydride, pyridine-2,3,5,6-tetracarboxylic acid dianhydride, or 2,3,3',4'-biphenyltetracarboxylic acid dianhydride; B¹ mol of a fluorine-containing diamine of the formula:- (in which each n is 0 or 1); B² mol of a diamine of the formula: H₂N - R² - NH₂ (IV) in which R² is an aliphatic group containing at least two carbon atoms, an alicyclic group, an araliphatic group, a carbocyclic aromatic group, a heterocylic group or a polysiloxane group such that the diamine is o-, m- and p-phenylenediamine, a diaminotoluene (e.g., 2,4-diaminotoluene), 1,4-diamino-2-methoxybenzene, 2,5-diaminoxylenes, 1,3-diamino-4-chlorobenzene, 1,4-diamino-2,5-dichlorobenzene, 1,4-diamino-2-boromobenzene, 1,3-diamino-4-isopropylbenzene, N,N'-diphenyl-1,4-phenylenediamine, 4,4'-diaminodiphenyl-2,2-propane, 4,4'-diaminodiphenylmethane, 2,2'-diaminostilbene, 4,4'-diaminostilbene, 4,4'-diaminodiphenyl ether, 4,4'-diaminodiphenyl thioether, 4,4'-diaminodiphenyl sulfone, 3,3'-diaminodiphenyl sulfone, 4,4'-diaminobenzoic acid phenyl ester, 2,2'-diaminobenzophenone, 4,4'-diaminobenzophenone, 4,4'-diaminobenzyl, 4-(4'-aminopnenylcarbamoyl)-aniline, bis(4-aminophenyl)-phosphine oxide, bis(4-aminophenyl)-methyl-phosphine oxide, bis(3-aminophenyl)-methylsulfine oxide, bis(4-aminophenyl)-phenylphosphine oxide, bis(4-aminophenyl)-cyclohexylphosphine oxide, N,N-bis(4-aminophenyl)-N-phenylamine, N,N-bis(4-aminophenyl)-N-methylamine, 4,4'-diaminodiphenyl urea, 1,8-diaminonaphthalene, 1,5-diaminonaphthalene, 1,5-diaminoanthraquinone, diaminofluoranthrene, bis(4-aminophenyl)-diethylsilane, bis(4-aminophenyl)-dimethylsilane, bis(4-aminophenyl)-tetramethyldisiloxane, 3,4'-diaminodiphenyl ether, benzidine, 2,2'-dimethylbenzidine, 2,2-bis[4-(4-aminophenoxy)phenyl]-propane, bis[4-(4-aminophenoxy)phenyl]sulfone, 4,4'-bis(4-aminopnenoxy)biphenyl, 1,4-bis(4-aminophenoxy)benzene, 1,3-bis(4-aminophenoxy)benzene 2,6-diaminopyridine, 2,4-diaminopyrimidine, 2,4-diamino-s-triazine, 2,7-diamino-dibenzofuran, 2,7-diaminocarbazole, 3,7-diaminophenothiazine, 2,5-diamino-1,3,4-thiadiazole, and 2,4-diamino-6-phenyl-s-triazine, dimethyldiamine, trimethylenediamine, tetramethylenediamine, hexamethylenediamine, heptamethylenediamine, octamethylenediamine, nonamethylenediamine, decamethylenediamine, 2,2-dimethylpropylenediamine, 2,5-dimethylhexamethylenediamine, 2,5-dimethylheptamethylenediamine, 4,4-dimethylheptamethylenediamine, 3-methylheptamethylenediamine, 3-methoxyheptamethylenediamine, 5-methylnonamethylenediamine, 2,11-diaminododecane, 1,12-diaminooctodecane, 1,2-bis(3-aminopropoxy)-ethane, N,N'-dimethylethylenediamine, N,N'-diethyl-1,3-diaminopropane, N,N'-dimethyl-1,6-diaminohexane, a diamine of the formula: H₂N(CH₂)₃O(CH₂)₂O(CH₂)₃NH₂, a diamine of the formula H₂N(CH₂)₃NH₂, 1,4-diaminocyclohexane, 4,4'-diaminodicyclohexylmethane, 1,4-bis(2-methyl-4-aminopentyl) benzene, or 1,4-bis(aminopentyl)benzene, 1.3-bis(aminomethyl) benzene, or 1,4-bis(aminomethyl)benzene, or a diamine of the formula: (in which l is from 1 to 100); and C mol of an aminosilane of the formula: (in which R³ is a group -(CH₂) s , -(CH₂) s in which s is an integer from 1 to 4; each R⁴ is a C₁-C₆ alkyl group, a phenyl group, or an alkyl-substituted phenyl group containing from 7 to 12 carbon atoms; each X is a halogen atom or a alkoxy or acetoxy group; and k is from 1 to 3, such that the aminosilane is: aminomethyl-di-n-propoxy-methylsilane, (β-aminoethyl)-di-n-propoxy-methylsilane, (β-aminoethyl)-diethoxy-phenylsilane, (β-aminoethyl)-tri-n-propoxysilane, (β-aminoethyl)-dimethoxy-methylsilane, (γ-aminopropyl)-di-n-propoxy-methylsilane, (γ-aminopropyl)-di-n-butoxy-methylsilane, (γ-aminopropyl)-trimethoxysilane, (γ-aminopropyl)-triethoxysilane, (γ-aminopropyl)-di-n-pentoxy-phenylsilane, (γ-aminopropyl)-methoxy-n-propoxy-methylsilane, (δ-aminobutyl)-dimethoxy-methylsilane, (3-aminophenyl)-di-n-propoxy-methylsilane, (4-aminophenyl)-tri-n-propoxysilane, [β-(4-aminophenyl)-ethyl]-diethoxy-methylsilane, [β-(3-aminophenyl)-ethyl]-di-n-propoxy-phenylsilane, [γ-(4-aminophenyl)-propyl]-di-n-propoxy-methylsilane, [γ-(4-aminophenoxy)-propyl]-di-n-propoxy-methylsilane, [γ-(3-aminophenoxy)-propyl]-di-n-butoxy-methylsilane, (γ-aminopropyl)-methyl-dimethoxysilane, (γ-aminopropyl)-methyl-diethoxysilane, (γ-aminopropyl)-ethyl-di-n-propoxysilane, 4-aminophenyl-trimethoxysilane, 3-aminophenyltrimethoxysilane, 4-aminophenyl-methyl-di-methoxysilane, 3-aminophenyl-di-methyl-methoxysilane, or 4-aminophenyl-tri-ethoxysilane; the ratios of A¹, A², B¹, B² and C meeting the requirements of formulae (VI), (VII), and (VIII) below: whereby to produce a mixture of compounds of the formulae: R¹, R², R³, R⁴, X, k, m and n have the same meanings as defined above, and m₁, m₂ and m₃each are 0 or a positive integer. A process as claimed in Claim 1 or claim 2 characterized in that B¹, B², and C have the values defined by formula (IX) below: A process of producing a silicon-containing polyimide, characterized in that a solution containing a precursor obtained according to a process as claimed in any one of the preceding claims is baked at 50 to 500°C.

Inventors: KUNIMUNE KOUICHI, KUTSUZAWA YOSHIYA, KUNIMUNE, KOUICHI, KUTSUZAWA, YOSHIYA
Applicants: CHISSO CORP, CHISSO CORPORATION
Application year: 1989
Main classification: C08G73
IPC codes: C08G73