Semiconductive ceramic composition

Abstract: A semiconductive ceramic composition capable of permitting its resistance-temperature characteristics and resistance to be controlled as desired and a firing temperature of the composition to be lowered to a degree sufficient to facilitate the mass-production at a low cost. The composition contains a main component consisting of SrO, PbO and TiO₂ and is subjected to firing in an oxidizing atmosphere. The composition may contain at least one of SiO₂ and M as a minor component. A variation in amount of the main and minor components permits characteristics and properties of the composition to be varied as desired.

Description: This invention relates to a semiconductive ceramic composition to be used for a sensor, a functional element such as a current limiter or a rush current restrictor, or the like, and more particularly to a semiconductive ceramic composition which mainly consists of SrO, PbO and TiO₂ and exhibits PTC (Positive Temperature Coefficient Thermistor) characteristics, NTC (Negative Temperature Coefficient Thermistor) characteristics, so-called V-type PTC characteristics having both positive and negative temperature coefficients, CTR (Critical Temperature Resistor) characteristics wherein resistance is abruptly decreased at a certain temperature region, or the like. A conventional semiconductive ceramic composition having a positive temperature coefficient mainly consists of barium titanate BaTiO₃. Such a conventional composition has a high firing or burning temperature when an additive other than an additive for semiconductivity is not added thereto, so that in its specific resistance or resistivity-temperature characteristic curve, resistance rises at a gentle gradient, resulting in failing to have a V-type resistivity-temperature characteristic curve having a negative resistance-temperature coefficient region of a flat shape. There is also proposed a PbTiO₃ composition having an additive for semiconductivity added thereto for the purpose of substituting Sr or Ca for a part of Pb. It is known in the art that firing or burning of the composition in air causes an increase in resistance of the composition, resulting in failing to provide the composition with low resistance required to function as a semiconductor, however, the firing in an argon atmosphere satisfactorily provides the composition with desired low resistance and provides a positive temperature coefficient thermistor of a high curie point. Unfortunately, the composition thus fired in an Ar atmosphere is increased in resistance in normal use in air, resulting in the characteristics being unstable. A negative temperature coefficient thermistor is mainly formed of transition metals such as Mn, Ni, Co and the like and it is highly difficult to vary a gradient of a resistivity-temperature characteristic curve over a wide range. In a negative temperature coefficient thermistor, a variation of the resistance with temperature is not linear in a logarithmic graph showing resistance-temperature characteristics of the semiconductive ceramic composition, accordingly, use of the thermistor requires a circuit to render the variation linear. Further, a negative temperature coefficient thermistor progressively decreases its resistance due to its own heat release when an overvoltage is applied thereto, resulting in a breakdown. In view of the above, an element is proposed which is formed by thermally joining a negative temperature coefficient element used for restricting an inrush current when a power supply is switched on and a positive temperature coefficient element for preventing flowing of an overcurrent when any abnormality occurs together so that V-type temperature characteristics may be exhibited to rapidly carry out both inrush current restriction and overcurrent prevention. In addition, a critical temperature resistor is mainly formed of V₂O₅, basic oxide and the like, requiring a reduction treatment and a quenching treatment which do not permit a stable manufacturing of the resistor. Also, the critical temperature resistor is in the form of a bead-like shape and adapted to use a Pt wire or the like as a lead wire, thus, its configuration is subject to restriction to cause its cost to be increased. Also, shifting of a point at which resistance of the resistor is abruptly varied is limited to a range as narrow as 50 to 80°C. Further, a restriction on manufacturing of the critical temperature resistor fails to form it into a bulky shape, so that it may not be used under a high voltage. The inventor, as a result of making researches in view of the foregoing, developed a semiconductive ceramic composition which is free of Ba irrespective of having an ABO₃ perovskite structure by selecting Sr and Pb on an A site and exhibits PTC characteristics of a relatively large negative temperature coefficient (NTC region) without any additive, as disclosed in Japanese Patent Application Laying-Open Publication No. 280401/1988. The present invention has been made in view of the foregoing disadvantage of the prior art while, as a result of our successive researches, taking notice of the fact that a variation in composition of main and minor components in the above-described composition developed by us provides a semiconductive ceramic composition which permits resistance-temperature characteristics and resistance of the composition to be controlled and a firing temperature of the composition to be lowered and that firing of the composition in an oxidizing atmosphere provides a ceramic of stable characteristics. Accordingly, it is an object of the present invention to provide a semiconductive ceramic composition which is capable of controlling its resistance-temperature characteristics and/or resistance as desired. It is another object of the present invention to provide a semiconductive ceramic composition which is capable of significantly lowering its firing temperature. It is a further object of the present invention to provide a semiconductive ceramic composition which is capable of providing a ceramic of stable characteristics. It is still another object of the present invention to provide a semiconductive ceramic composition which is capable of possessing NTC characteristics, V-type PTC characteristics, PTC characteristics or CTR characteristics as desired. It is yet another object of the present invention to provide a semiconductive ceramic composition which is capable of permitting its NTC characteristics, V-type PTC characteristics, PTC characteristics or CTR characteristics to be varied as desired. It is even another object of the present invention to provide a semiconductive ceramic composition which is capable of exhibiting various resistance-temperature characteristics and varying the characteristics over a wide range. It is still a further object of the present invention to provide a semiconductive ceramic composition which is capable of rapidly and positively exhibiting V-type characteristics. It is yet a further object of the present invention to provide a semiconductive ceramic composition which is capable of being readily manufactured. It is even a further object of the present invention to provide a semiconductive ceramic composition which is capable of being formed into various sizes and/or configurations. In accordance with the present invention, a semiconductive ceramic composition is provided. The composition comprises Sr of 0.05 to 0.95 molar parts based on SrO, Pb of 0.05 to 0.85 molar parts based on PbO, Ti of 0.90 to 2.0 molar parts based on TiO₂ and R of 0.001 to 0.3 molar parts based on its oxide. R is at least one material selected from the group consisting of rare earth elements, Bi, V, W, Ta, Nb and Sb, in which the amounts of rare earth elements, except Ce, as well as the amounts of Bi and Sb are based on 1/2(R₂O₃), the amounts of V, Ta and Nb are based on 1/2(R₂O₅) and the amounts of Ce and W are based on RO₂ and RO₃, respectively. The composition is subjected to firing in an oxidizing atmosphere. The semiconductive ceramic composition of the present invention may further comprise SiO₂ added in an amount of 0.001 to 30 wt%. The composition of the present invention may further comprise M added thereto, which is at least one material selected from the group consisting of Mn, Cu, Cr, Ni, Fe, Co, Ru, Os, Ge, Hf, P, Sb, V, Mg, Zn, W, Al, Mo, In, Ga, Nb, Ta, Bi, Sc, rare earth elements, Th, Na, K, Li, B, Ag, Cs and Rb. M is added in amounts of 0.00001 to 1.2 wt% except Al and W, and Al and W is added in amounts of 0.00001 to 8 wt%. SiO₂ and M may be added together to the composition. In the present invention, SrO and PbO can be replaced in amounts of 0.001 to 0.3 mol with at least one of BaO and CaO. The semiconductive ceramic composition of the present invention which contains SrO, PbO and TiO₂ as its main component as described above provides a ceramic having PTC characteristics, V-type PTC characteristics, NTC characteristics, or CTR characteristics as desired. An increase in TiO₂ permits specific resistance or resistivity of the composition to be controlled from a low level to a high level without significantly varying a gradient of resistance-temperature characteristics, resulting in providing a ceramic element which is capable of meeting any resistance requirements. SiO₂ contributes to lowering of a temperature at which the composition starts to possess semiconductivity (hereinafter referred to as "semiconductivity starting temperature") and changes characteristics of the composition from V-type PTC characteristics to characteristics approaching to CTR characteristics. Addition of M enhances PTC characteristics and NTC characteristics. Also, substitution of BaO and CaO for a part of SrO and PbO enhances PTC characteristics and permits a particle size of the composition fired or sintered to be uniform. Further, concurrent or combined addition of additives exhibiting different functions to the composition provides it with features of the respective additives. These and other objects and many of the attendant advantages of the present invention will be readily appreciated as the same becomes better understood by reference to the following detailed description when considered in connection with the accompanying drawings; wherein: Figs. 1 to 5 each are a graphical representation showing a resistivity-temperature characteristic curve of a semiconductive ceramic composition according to the present invention. Now, a semiconductive ceramic composition according to the present invention will be described hereinafter with reference to the following example. Example Starting materials for various semiconductive ceramic compositions were selected from SrCO₃, PbO, Y₂O₃, TiO₂, CaCO₃, La₂O₃, CeO₂, Nd₂O₅, Sm₂O₃, Dy₂O₃, Gd₂O₃, V₂O₃, Bi₂O₃, WO₃, Ta₂O₅, Nb₂O₅, Sb₂O₃, MnCO₃, CuO, Cu₂O₃, Cr₂O₃, Li₂CO₃, Th₂O₃, Sc₂O₃, Fe(NO₃)₃, Al₂O₃, P₂O₅, CoO, BaCO₃, ZnO, MgCO₃, B₂O₃, NiO, Na₂O, Ga, In, Tl, Rb₂O, Cs₂O, Ag, Ru₂O₃, Os₂O₃, Ge, HfO₂, MoO₃ and K₂O and weighed to prepare semiconductive ceramic compositions shown in TABLES 1 to 6. The amounts of minor components M shown in the tables were based on their elements. The selected and weighed materials were then placed in a polyethylene pot mill charged with agate beads and subjected to wet mixing for 20 hours, resulting in being powdered. Then, each of the so-obtained powder materials was subjected to hydration and drying followed by calcination at a temperature of 800 to 1100°C for 2 hours. The material calcined was coarsely grained and then water-ground for about 20 hours in the pot mill described above, followed by dehydration and drying. Subsequently, polyvinyl alcohol (PVA) was added to the dried material to lead to granulation of the material, which was then subjected to shaping at a pressure of about 200 MPa (2 ton/cm²) by means of a hydraulic pressing machine, resulting in a disc of 16.5mm in diameter and 3.5mm in thickness. The so-formed disc was then subjected to firing or burning for 2 hours at a temperature of 1150 to 1300°C in a batch oven of an oxidizing atmosphere, resulting in each of the semiconductive ceramic composition being obtained in the form of a disc-like shape having dimensions of 14mm in diameter and 2.5mm in thickness. The so-prepared semiconductive ceramic composition specimens each were formed on both surfaces thereof with electrodes of In-Ga alloy, so that specific resistance or resistivity at 20°C, minimum resistivity and resistance-temperature characteristics were measured with respect to each specimen. The results were as shown in TABLES 1 to 6 and Figs. 1 to 5. In the tables, specimens with which an asterisk (*) is marked are not included in the scope of the present invention invention. A temperature coefficient α is indicated by the following equation: Also, a curie point Tc indicates a temperature at an intersection of extensions from linear sections on both sides of an inflection point. TABLE 1 indicates that compositions containing TiO₂ of less than 0.90 molar parts or more than 2.0 mol are increased in resistance to a degree sufficient to render them impractical, as apparent from test results of the compositions of Specimens Nos. 1, 8, 9, 16, 17 and 31. An increase in amount of TiO₂ causes specific resistance or resistivity ρ min to be moved upwardly without varying -α and α or a gradient of a temperature coefficient, as seen from Specimens Nos. 3 to 7 and Nos. 13 to 15. Test results on Specimens Nos. 18 to 23, Nos. 26 to 29 and Nos. 32 to 35 indicate that an increase in Y₂O₃ which is an additive for semiconductivity causes each composition to exhibit CTR characteristics rather than V-type PTC characteristics, and Specimens Nos. 13 to 15 indicate that an increase in TiO₂ as well as that in Y₂O₃ leads to movement of the resistivity from a lower level to a high level without varying the temperature coefficients -α₁ and α . Specimens Nos. 38 to 42, Nos. 45 to 47 and Nos. 50 to 52 possess V-type PTC characteristics and each indicate that an increase in Sr and a decrease in Pb result in a curie point Tc of each composition being substantially moved toward a negative side. Specimens Nos. 55 to 59, Nos. 62 to 64 and Nos. 67 to 69 each possess CTR characteristics and have a curie point Tc substantially moved toward a negative side, so that the curie point Tc may be controlled over a wide range extending to the vicinity of a curie point of each of simple substances SrTiO₃ and PbTiO₃. A content of Pb more than 0.85 molar parts or less than 0.05 molar parts in the composition increases its resistance to a degree sufficient to render the composition impractical. In compositions of Specimens Nos. 71 to 81, rare earth elements are used as R. It will be noted that each of the rare earth elements exhibits substantially the same behavior as Y₂O₃ used in Specimens Nos. 1 to 70. Fig. 1 shows relationships between resistivity and a temperature in some representatives of the specimens shown in TABLE 1. The compositions shown in TABLE 2 each were prepared so as to contain SrO, PbO and TiO₂ as a main component and SiO₂ as a minor component. In TABLE 2, Specimens Nos. 3 to 9 and Nos. 13 to 19 each indicate that it is substantially varied in -α with an increase in addition of SiO₂, so that characteristics of the composition are changed from V-type characteristics to CTR characteristics when a content of SiO₂ is 2.0 wt% or more, resulting in its semiconductivity starting temperature ST being lowered by 20 to 50°C. This means that an optimum temperature for the firing is likewise lowered, leading to energy savings and mass production of the composition at significantly reduced costs. A content of SiO₂ below 0.001 wt% fails to cause the semiconductivity starting temperature to be lowered, whereas when SiO₂ is contained at a level of 30 wt% or more in the composition, the composition is not provided with semiconductivity, resulting in being melted during firing. An experiment revealed that a quantitative range of each of SrO, PbO, Y₂O₃ and TiO₂ in TABLE 2 is substantially the same as that in TABLE 1 irrespective of addition of SiO₂. Fig. 2 shows relationships between resistivity and a temperature in some representatives of the specimens shown in TABLE 2. The compositions shown in TABLE 3 each were prepared so as to contain SrO, PbO and TiO₂ as a main component and M as a minor component. M is at least one material selected from the group consisting of Mn, Cu, Cr, Ni, Fe, Co, Ru, Os, Ge, Hf, P, Sb, V, Mg, Zn, W, Al, Mo, In, Ga, Nb, Ta, Bi, Sc, rare earth elements, Th, Na, K, Li, B, Ag, Cs and Rb. In each of the compositions, the amount of M is varied while keeping the amount of Y₂O₃ at a typical level sufficient to permit it to exhibit V-type characteristics and CTR characteristics. As will be noted from Specimens Nos. 3 to 6, Nos. 10 to 12, Nos. 16 to 18 and Nos. 22 to 24, Mn and Cu contributes to an increase in temperature coefficient α of the composition to enhance the PTC characteristics. However, the amount of M below 0.00001 wt% fails to permit the composition to exhibit such advantages and M in an amount above 1.2 wt% increases resistance of the composition to a degree sufficient to render it impractical. Specimens Nos. 26 to 39 relate to addition of V, Cr, Ni, Ce, Fe, Os, Ge, Hf, Co, Sb, Ru, Zn, P and Mg, respectively. Each of the elements exhibits substantially the same advantage as Mn and Cu. Specimens Nos. 40 and 41 each were prepared so as to contain two kinds of elements simultaneously added. It will be noted that combined addition of the elements exhibits substantially the same advantage as described above. An experiment indicated that a quantitative range of each of SrO, PbO, Y₂O₃ and TiO₂ in TABLE 3 is substantially the same as that in TABLE 1 irrespective of addition of the M. Li, Al, W, Ga, In, Tl, Nb, Na, B, Th, Ta, Mo, Ag, Cs, Rb, Sc, Bi, K, La, Nd and rare earth elements except Ce each contributes to an increase in temperature coefficient -α of the composition, resulting in the NTC characteristics being emphasized, as apparent from Specimens Nos. 45 to 44, Nos. 51 to 53, Nos. 57 to 59, Nos. 63 to 65 and Nos. 67 to 83. A content of each component below 0.0001 wt% fails to exhibit any effect and the content of 1.2 wt% or more (8 wt% or more in the case of Al) causes resistance of the composition to be increased to a degree sufficient to render it impractical. A combination of the M such as, for example, W+Al, Li+Nb or the like likewise leads to an increase in temperature coefficient -α , as noted from Specimens Nos. 84 and 85. Figs. 3 and 4 each show relationships between resistivity and a temperature in some representatives of specimens shown in TABLE 3. The compositions shown in TABLE 4 each were prepared so as to contain SrO, PbO and TiO₂ as a main component and SiO₂ and M as a minor component. TABLE 4 indicates that concurrent or combined addition of SiO₂ and M exhibits a combination of advantages obtained by adding the components independent from each other. In TABLE 4, Specimens Nos. 1 to 4 indicate advantages obtained due to an increase in TiO₂ and addition of SiO₂. More specifically, addition of SiO₂ causes a semiconductivity starting temperature of the composition to be lowered and an increase in TiO₂ permits resistance of the composition to be adjusted without significantly varying its temperature coefficients α and -α. Specimens Nos. 5 to 12 indicate advantages due to an increase in TiO₂ and addition of M. Addition of Mn or Li causes a semiconductivity starting temperature of the composition to be lowered and an increase in TiO₂ permits its resistance to be adjusted without significantly varying its temperature coefficients α and -α. Addition of M other than Li and Mn exhibits like advantages. Specimens Nos. 13 to 16 indicate advantages due to combined addition of SiO₂ and M while keeping the amount of TiO₂ at a constant level. It will be noted that Mn and Li enhance PTC characteristics and NTC characteristics of the composition, respectively, and addition of SiO₂ leads to lowering of the semiconductivity starting temperature. Also, addition of M other than Mn and Li exhibits like advantages. Specimens Nos. 17 to 24 indicate advantages due to an increase in TiO₂ and combined or concurrent addition of SiO₂ and M. Mn and Li enhance PTC characteristics and NTC characteristics of the composition, respectively, and addition of SiO₂ leads to lowering of the semiconductivity starting temperature. TiO₂ permits resistance of the composition to be adjusted. Also, addition of M other than Mn and Li exhibits like advantages. An experiment proved that a quantitative range of each of SrO, PbO, Y₂O₃ and TiO₂ in TABLE 4 is substantially the same as that in TABLE 1 irrespective of combined addition of SiO₂ and M. The compositions shown in TABLE 5 each were prepared so as to contain SrO, PbO and TiO₂ as a main component wherein a part of each of SrO and PbO is replaced with CaO, BaO or CaO+BaO to cause the composition to exhibit V-type PTC characteristics or CTR characteristics. More particularly, Specimens Nos. 3 to 6, Nos. 10 to 12, Nos. 16 to 18 and Nos. 22 to 24 indicate that addition of CaO or BaO causes the composition to exhibit enhanced PTC characteristics (α). Also, it was observed that each of the specimens exhibits a substantially uniform particle size or diameter in the form of a fired element. For example, an analysis of distribution of particle diameter carried out by means of a photograph of a surface of an element obtained by subjecting Sample No. 1 in TABLE 5 to firing revealed that its has an average particle diameter of 13.2µ with a standard deviation of 4.1µ, whereas a similar analysis on an element having CaO and BaO added thereto indicates a standard deviation of 2µ in a similar average particle diameter. Thus, it will be noted that addition of CaO, BaO or CaO+BaO contributes to uniformalizing of the particle size, resulting in reducing a variation of characteristics of the composition. Specimens Nos. 26 and 27 indicate that concurrent or combined addition of CaO and BaO likewise exhibits substantially the same advantage as described above. However, it was found that the advantage is not exhibited at a content of CaO or BaO below 0.0005 molar parts mol and the content of 0.3 molar parts or more causes an increase in resistance to a degree sufficient to render the composition impractical. Also, an experiment revealed that a quantitative range of each of SrO, PbO, Y₂O₃ and TiO₂ in TABLE 5 is substantially the same as that in TABLE 1 irrespective of concurrent addition of CaO and BaO. Fig. 5 shows relationships between resistivity and a temperature in some representatives of the specimens shown in TABLE 5. The compositions shown in TABLE 6 each were prepared so as to contain SrO, PbO and TiO₂ as a main component and SiO₂ and M as a minor component. TABLE 6 indicates that concurrent or combined addition of SiO₂ and M exhibits a combination of advantages obtained by adding the components independent from each other. In TABLE 6, CaO is added to all specimens, resulting in the PTC characteristics being somewhat enhanced and the grain or particle size being rendered uniform. To the compositions of Specimens Nos. 8 to 10, 12, 14 and 30 to 33 is added only M. It will be noted that Mn increases a temperature coefficient -α of the composition and enhances the NTC characteristics. The test results on the compositions of Specimens Nos. 5 and 7 indicate that an increase in amount of TiO₂ permits the resistance to be adjusted. Specimens Nos. 1, 3, 28 and 29 indicate that addition of SiO₂ causes a semiconductivity starting temperature of the composition to be lowered and Specimens Nos. 2 and 4 indicate that addition of SiO₂ lowers the semiconductivity starting temperature and an increase in TiO₂ permits adjustment or control of the resistance. Also, in TABLE 6, Specimens Nos. 9, 11, 13 and 15 reveal advantages due to an increase in TiO₂ and addition of M. More specifically, Mn and Li contribute to enhancement of the PTC characteristics and NTC characteristics, respectively, and TiO₂ permits adjustment of the resistance. It was found that M other than Mn and Li exhibits substantially the same advantage. Specimens Nos. 16 to 20, 22, 24 and 26 indicate test results of combined addition of SiO₂ and M. It will be noted that Mn and Li enhance the PTC characteristics and NTC characteristics respectively, and SiO₂ contributes to lowering of the semiconductivity starting temperature. Specimens Nos. 21, 23, 25 and 27 reveals advantages due to an increase in TiO₂ and combined addition of SiO₂ and M. Mn and Li enhance the PTC characteristics and NTC characteristics, SiO₂ contributes to lowering of the semiconductivity starting temperature, and an increase in TiO₂ permits adjustment of the resistance. Addition of M other than Mn and Li exhibits substantially the same advantage. Also, it was found that this is true of addition of BaO in place of CaO or concurrent addition of BaO and CaO. Also, it was confirmed by an experiment that a quantitative range of each of SrO, PbO, Y₂O₃ and TiO₂ in TABLE 6 is substantially the same as that in TABLE 1 irrespective of combined addition of SiO₂ and M. As can be seen from the foregoing, in the semiconductive ceramic composition of the present invention which contains a main component consisting of SrO, PbO and TiO₂, a variation of TiO₂ permits specific resistance or resistivity of the composition to be varied without significantly varying the resistance-temperature characteristics. Also, addition of SiO₂ permits the semiconductivity starting temperature to be decreased by 20 to 50°C, resulting in improving sintering of the composition and facilitating manufacturing of the composition. Addition of SiO₂ in an amount below 2.0 wt% causes the composition to exhibit V-type PTC characteristics and the addition in amount of 2.0 wt% or more leads to change of characteristics of the composition from NTC characteristics to characteristics approaching to CTR characteristics. Also, the composition of the present invention has an advantage capable of substantially moving a point at which resistance is suddenly varied, as compared with the prior art which merely causes slight movement of the point. Also, a variation in addition of SiO₂ and Y₂O₃ causes characteristics of the composition to be varied as desired. More particularly, it permits characteristics of the composition to be changed from PTC characteristics to V-type PTC characteristics and further to characteristics approaching to CTR characteristics. Addition of Ca or Ba renders a particle size of the composition substantially uniform, resulting in mass-production of the composition stable in quality and free of a variation in characteristics. Addition of M which is an impurity contributes to control and improvement of various characteristics of the composition. For example, addition of at least one of Mn, Cu, Cr, Ni, Ce, Fe, Co, Ru, Os, Ge, Hf, P, Sb, V, Mg and Zn contributes to an improvement in rise of PTC characteristics and addition of at least one of W, Al, Mo, In, Ga, Nb, Ta, Bi, Sc, rare earth elements (except Ce), Th, Na, K, Li, B, Ag, Cs and Rb renders a gradient of NTC characteristics steep. Thus, it will be noted that the semiconductive ceramic composition of the present invention exhibits various kinds of resistance-temperature characteristics and is readily manufactured on a large scale.

Claims: A semiconductive ceramic composition comprising Sr of 0.05 to 0.95 molar parts based on SrO, Pb of 0.05 to 0.85 molar parts based on PbO, Ti of 0.90 to 2.00 molar parts based on TiO₂, and R of 0.001 to 0.30 molar parts based on its oxide; wherein R is at least one material selected from the group consisting of rare earth elements, Bi, V, W, Ta, Nb and Sb, in which the amounts of rare earth elements, except Ce, as well as the amounts of Bi and Sb are based on ½(R₂O₃), the amounts of V, Ta and Nb are based on ½(R₂O₅), and the amounts of Ce and W are based on RO₂ and RO₃, respectively; and wherein the composition is subjected to firing in an oxidizing atmosphere. A semiconductive ceramic composition as defined in Claim 1 further comprising SiO₂ added in an amount of 0.001 to 30 wt%. A semiconductive ceramic composition as defined in Claim 1 further comprising M added thereto; said M being at least one material selected from the group consisting of Mn, Cu, Cr, Ni, Fe, Co, Ru, Os, Ge, Hf, P, Sb, V, Mg, Zn, W, Al, Mo, In, Ga, Nb, Ta, Bi, Sc, rare earth elements, Th, Na, K, Li, B, Ag, Cs and Rb; said M being added in amounts of 0.00001 to 1.2 wt% except Al and W; Al and W being added in amounts of 0.00001 to 8 wt%. A semiconductive ceramic composition as defined in Claim 1 further comprising SiO₂ added in an amount of 0.001 to 30 wt% and M; said M being at least one material selected from the group consisting of Mn, Cu, Cr, Ni, Fe, Co, Ru, Os, Ge, Hf, P, Sb, V, Mg, Zn, W, Al, Mo, In, Ga, Nb, Ta, Bi, Sc, rare earth elements, Th, Na, K, Li, B, Ag, Cs and Rb; said M being added in amounts of 0.00001 to 1.2 wt% except Al and W; Al and W being added in amounts of 0.00001 to 8 wt%. A semiconductive ceramic composition as defined in Claim 1, wherein SrO and PbO in amounts of 0.001 to 0.3 mol are replaced with at least one of BaO and CaO. A semiconductive ceramic composition as defined in Claim 5 further comprising SiO₂ added in an amount of 0.001 to 30 wt%. A semiconductive ceramic composition as defined in Claim 5 further comprising M; said M being at least one material selected from the group consisting of Mn, Cu, Cr, Ni, Fe, Co, Ru, Os, Ge, Hf, P, Sb, V, Mg, Zn, W, Al, Mo, In, Ga, Nb, Ta, Bi, Sc, rare earth elements, Th, Na, K, Li, B, Ag, Cs and Rb; said M being added in amounts of 0.00001 to 1.2 wt% except Al and W; Al and W being added in amounts of 0.00001 to 8 wt%. A semiconductive ceramic composition as defined in Claim 5 further comprising SiO₂ added in an amount of 0.001 to 30 wt% and M; said M being at least one material selected from the group consisting of Mn, Cu, Cr, Ni, Fe, Co, Ru, Os, Ge, Hf, P, Sb, V, Mg, Zn, W, Al, Mo, In, Ga, Nb, Ta, Bi, Sc, rare earth elements, Th, Na, K, Li, B, Ag, Cs and Rb; said M being added in amounts of 0.00001 to 1.2 wt% except Al and W; Al and W being added in amounts of 0.00001 to 8 wt%.

Inventors: HAMADA MUNEMITSU, IWAYA SHOICHI, MASUMURA HITOSHI, SATOH HIROYUKI, SOGABE TOMOHIRO, TAGUCHI HARUO, TAKAHASHI SHIGEYA, HAMADA, MUNEMITSU, IWAYA, SHOICHI, MASUMURA, HITOSHI, SATOH, HIROYUKI, SOGABE, TOMOHIRO, TAGUCHI, HARUO, TAKAHASHI, SHIGEYA
Applicants: TDK CORP, TDK CORPORATION
Application year: 1989
Main classification: C04B35
IPC codes: H01C7, C04B35