Josephson devices and process for manufacturing the same

Abstract: A Josephson device, comprising a junction formed by forming the first layer-shaped oxide superconductor thin film including a plurality of Cu-O layers on a substrate, a barrier layer thereon and the second layer-­ shaped oxide superconductor thin film on the barrier layer. The Josephson device according to the present invention is manufactured by forming the first layer-­ shaped oxide superconductor thin film on a substrate, forming a barrier layer in the same vacuum chamber, defining patterns to said barrier layer and said first layer-shaped oxide superconductor thin film, forming an interlayer insulating film on said barrier layer, removing said interlayer insulating film in a region serving as a junction, effecting exposure to oxygen plasma, forming the second layer-shaped oxide superconductor thin film in contact with a part of the surface of said barrier layer and defining patterns to said second layer-shaped oxide superconductor thin film.

Description: The present invention relates to tunnel junction type Josephson devices using an oxide superconductor and a process for manufacturing the same. Conventionally, although niobium nitride (NbN), germanium niobium (Nb 3 Ge) and the like, which are A15 type binary compounds have been known as a superconductor, the superconducting transition temperature of these materials are 24 K at best, whereas an oxide superconductor as a perovskite type ternary compound is expected to have a higher transition temperature and a Ba-La-Cu-O type high temperature superconductor is proposed [J. G. Bednorz and K. A. Müller, Zeitschrift for Physik B - Condensed Matter, 64 , 189-193 (1986)]. Further, some of oxide superconductors discovered recently have a superconducting transition temperature exceeding the temperature of liquid nitrogen (77.3 K), and thus this discovery is considered to enlarge the fields to which superconductors are applied. In particular, it is also discovered that a Bi-Sr-Ca-Cu-O type superconductor composed of a Bi type layer-shaped oxide exhibits a superconducting transition temperature equal to or higher than 100 K. [H. Maeda, Y. Tanaka, M. Fukutomi and T. Asano, Japanese Journal of Applied Physics, 27 , L209-L210 (1988)]. Recently, it is reported that a Tl-Ba-Ca-Cu-O type material exhibits a superconducting transition at 120 K or more and it is found that this is a layer-shaped oxide like a Bi type layer-shaped oxide [Z. Z. Sheng and A. M. Hermann, Nature, 332 , 138-139 (1988)]. Although the superconducting mechanism of this kind of materials is not known in detail, there is a possibility that a transition temperature thereof exceeds a room temperature. Then, they are expected to have more hopeful characteristics as a superconductor than conventional binary compounds. A Josephson device having a Josephson junction using a superconductor is known as a typical superconductive device. Josephson junctions include a tunnel junction type composed of superconductors disposed on opposite sides of a very thin insulating layer having a thickness of several nanometers (tens of angstrom), a bridge type composed of a single superconductor having a thin part contracted to the size of 1 µm, a point contact type using a sharp stylus composed of a superconductor and the like. The Josephson devices of the above types except the tunnel junction type require a super-fine pattern lithography technology with a result of low reproducibility and yield, and thus it is very difficult to integrate many Josephson devices. Therefore, they are mainly manufactured using the conventional superconductor such as a binary compound. On the other hand, with respect to a Josephson device using the above oxide superconductor, the following prototypes have been conventionally manufactured: a broken type Josephson device composed of an oxide superconductor which is divided into two parts and has a slight contact made therebetween; a bridge type Josephson device composed of a thin film of an oxide superconductor having a small construction; and a proximity effect bridge type Josephson device composed of oxide superconductors coupled a noble metal such as Au, Ag or the like. In addition, a tunnel type Josephson device is manufactured as a prototype which is composed of an oxide superconductor such as Y-Ba-Cu-O, Bi-Sr-Ca-Cu-O, Tl-Ba-Ca-Cu-O or the like and a metal superconductor such as Nb, Pb or the like. It has been difficult, however, to manufacture a tunnel type Josephson device composed only of oxide superconductors, because it is considered that an interface reaction arises between a barrier layer and an oxide superconductor thin film when the barrier layer or a second oxide superconductor thin film is formed and thus the structure of the first or second thin film composed of the oxide superconductor is broken and the characteristics thereof are deteriorated. EP-0 342 038 A2, falling within the terms of Article 54(3) EPC, published on November 15, 1989, i.e. after the filing of the present patent application, discloses a Josephson device and a method for producing the same. The Josephson device according to said document comprises first and second layer-shaped oxide superconductor thin films each comprising a bismuth-copper-containing oxide superconductor and a barrier layer therebetween. The barrier layer comprises an oxide containing Bi. In the above mentioned known Josephson device there is no insulating interlayer between the two thin films in regions where no barrier layer is provided. JOURNAL OF PHYSICS D, vol, 20, no. 10, October 1987, pages 1330 - 1335, London, Great Britain, discloses a Josephson device with a barrier layer made of Y 2 O 3 . JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 26, no. 9, September 1987, pages L 1443 - L 1444, discloses a Josephson device with a barrier layer made of Al 2 O 3 . US-PS 4,499,119 shows a Josephson device comprising a barrier layer made of Si, Ge or alloys thereof. JP-A-58-002 082 and JP-A-58-077 265 describe a Josephson device having a barrier layer made of silicon nitride. JP-A-61-220 385 discloses a Josephson device with a barrier layer made of magnesium oxide. JP-A-63-224 273, published on September 19, 1988, discloses a Josephson device having a barrier layer made of Ta. In view of the prepublished prior art, the object underlying the invention is to provide a Josephson device and a process for producing the same, which Josephson device has an excellent tunnel junction. According to the invention, the object is achieved by a Josephson device and a process for producing the same according to claims 1, 4, 12 and 13, respectively. Preferred embodiments are claimed in the subclaims. Figure 1 is a cross sectional view illustrating an embodiment of Josephson device according to the present invention; Figure 2 are process cross sectional views illustrating an embodiment of a process for manufacturing the Josephson device of Figure 1 according to the present invention; Figure 3 are process diagrams of an embodiment of a process for manufacturing a Josephson device according to the present invention; Figure 4 is a cross sectional view illustrating an embodiment of Josephson device according to the present invention; Figure 5 are process cross sectional views illustrating an embodiment of process for manufacturing the Josephson device of Figure 4 according to the present invention; Figure 6 is a schematic diagram of a crystal structure of a layer-shaped oxide superconductor thin film including Cu-O layers; Figure 7 are process cross sectional views illustrating an embodiment of process for manufacturing a Josephson device according to the present invention; Figure 8 is a schematic view of a thin-film-forming apparatus comprising a plurality of targets and a shutter used to manufacture a Josephson device according to the present invention; Figure 9 is a structural cross sectional view of the first layer-shaped oxide superconductor thin film used in a Josephson device according to the present invention; Figure 10 is a schematic view of a thin-film-forming apparatus comprising a plurality of targets and a shutter used to manufacture a Josephson device according to the present invention; and Figure 11 is a structural cross sectional view illustrating another embodiment of the first layer-shaped oxide superconductor thin film used in a Josephson device according to the present invention. As shown in Figure 1, the first layer-shaped oxide superconductor thin film 2 is formed on a substrate 1, a barrier layer 3 is formed on the thin film 2 and the second layer-shaped oxide superconductor thin film 4 is formed to provide a junction. An interlayer insulating film 5 is formed in such a manner that it surrounds the junction. A layer-shaped oxide superconductor thin film 6 for a contact is formed on the interlayer insulating film 5 so that the thin film 6 is brought into contact with the second layer-shaped oxide superconductor thin film 4. A Josephson device according to the present invention is manufactured. Next, a process for manufacturing the Josephson device of Fig. 1 will be described with reference to Figure 2. For example, MgO substrate is used as the substrate 1, the Bi type layer-shaped oxide superconductor thin film 2 mainly composed of Bi 2 Sr 2 Ca 1 Cu 2 O y is formed to a thickness of 300 nm at a substrate temperature of about 700°C by an rf magnetron sputtering method, and the barrier layer 3 is formed to a thickness of 2 nm in the same vacuum [Figure 2a]. A material familiar with the layer-shaped oxide superconductor thin film 2 is used as the barrier layer 3, and a Bi oxide is used. A material of the barrier layer 3 must be carefully selected since problems arise in that when the substrate 1 is heated to further form the layer-shaped oxide superconductor thin films 4 and 6, the barrier layer 3 is diffused and deteriorates the layer-shaped oxide superconductor thin film 2 or 4 and the like, or the barrier layer 3 is broken to cause the layer-shaped oxide superconductor thin films 2 and 4 to be short-circuited. As a material of the barrier layer, there is used bismuth oxide alone or in admixture with strontium oxide, calcium oxide, barium oxide, zinc oxide, magnesium oxide, and zirconium oxide and the like. These materials do not cause a mutual diffusion, and even if the mutual diffusion is caused, they are less deteriorated since they are composed of a material similar to the Bi oxide type layer-shaped oxide superconductor thin film. A Bi oxide type layer-shaped compound is used as a material of the barrier layer 3. It is found that when a Bi oxide type layer-shaped compound containing at least one selected from the group consisting of Ti, Nb, Ta and W is used as a material of the barrier layer 3, a tunnel junction with a less current leakage can be also provided likewise. Further, an excellent tunnel junction can be formed likewise when a material of the barrier layer 3 is composed of a Bi oxide type layer-shaped compound containing at least one selected from the group consisting of Ti, Nb and Ta and at least one selected from the group consisting of Pb, Ca, Sr and Ba; a Bi oxide type layer-shaped compound containing Ti and at least one metal selected from the group consisting of Na, K, Fe, Nb and Ta; or a Bi oxide type layer-shaped compound containing Nb and K. Furthermore, when Bi 2 Ti 4 O 11 or Bi 4 Ti 3 O 12 is used as a material of the barrier layer 3, an excellent tunnel junction can be formed. Thereafter, the second layer-shaped oxide superconductor thin film 4 is further formed to a thickness of about 400 nm in the same vacuum by an rf magnetron spattering method [Figure 2b]. A temperature of the substrate is about 700°C. A resist pattern 7 is formed to a thickness of about 1 µm on the thin films continuously formed as described above by a photolithographic process, and etching is effected thereto by an Ar ion milling to expose the first layer-shaped oxide superconductor thin film 2 [Figure 2c]. Next, the resist 7 is removed by irradiation of O 2 plasma or the like and then the interlayer insulating film 5 is formed. A material similar to one used for the barrier layer 3 can be used. Thereafter, a spin-on-glass 8 is applied on the interlayer insulating layer by a spinner and baked to be flown so that the surface thereof is made flat [Figure 2d]. Then, the surface thereof is etched with Ar ion [Figure 2e]. The surface of the second layer-shaped oxide superconductor thin film 4 is exposed in this step. Further, the layer-shaped oxide superconductor thin film 6 for a contact is formed on the second layer-shaped oxide superconductor thin film 4 and the layer-shaped oxide superconductor thin film for a contact 6 is patterned by photolithography and etching, whereby a Josephson device is manufactured. Figure 3 shows process diagrams of an embodiment of a process for manufacturing a Josephson device according to the present invention. The first layer-shaped oxide superconductor thin film 2 (film thickness: 300 nm) of Bi-Sr-Ca-Cu-O type is formed on a substrate 1 making use of a (100) surface of MgO at a substrate temperature of about 700°C by an rf magnetron spattering method and then Bi 4 Ti 3 O 12 is deposited as a barrier layer 3 (film thickness: 2 nm) by an rf magnetron spattering method while the vacuum is maintained [Figure 3a]. Then, the first layer-shaped oxide superconductor thin film 2 is patterned by photolithography and Ar ion milling [Figure 3b]. Next, a negative type resist is spin-coated to a thickness of 8.0 nm as a protective layer and a positive type resist is spin-coated thereon to a thickness of 800 nm, and then they are exposed and developed to define a pattern of a resist 7 which is formed only in a region serving as a junction and a contact portion of the first layer-shaped oxide superconductor thin film 2. Bi 4 Ti 3 O 12 is deposited thereon to a thickness of 300 nm by an rf magnetron spattering method to form an interlayer insulating film 5 [Figure 3c]. The specimen was immersed in acetone and slightly subjected to ultrasonic waves for lifting off [Figure 3d]. The remaining resist is removed by ashing in oxygen plasma and the barrier layer 3 is cleaned. Immediately after that, the second oxide superconductor thin film 4 is formed in the same vacuum at a substrate temperature of 700°C by an rf magnetron sputtering method. A film thickness thereof is 300 nm. A resist pattern 9 is formed thereon to pattern the second oxide superconductor thin film 4 by ordinary photolithography [Figure 3e]. Etching is effected by an Ar ion milling so that the second oxide superconductor thin film 4 is patterned and simultaneously a window is defined to the barrier layer 3 for a contact with the first oxide superconductor thin film 2. The remaining resist pattern 9 is removed by ashing in oxygen plasma and then a Josephson device is formed by being heated at 845°C in an oxygen atmosphere for four hours and annealed by being cooled in a furnace to a room temperature [Figure 3f]. The Josephson device manufactured as described above corresponds to a structure wherein the second layer-shaped oxide superconductor thin film 4 and the layer-shaped oxide superconductor thin film for a contact 6 are composed of the same material and united in Figure 1. Figure 4 shows a cross sectional view of an embodiment of Josephson device according to the present invention. Figure 5 shows an embodiment of process for manufacturing it. In Figure 4, the first layer-shaped oxide superconductor thin film 2 is formed on a substrate 1, a thin metal film 10 is formed thereon and a barrier layer 3 and then the second layer-shaped oxide superconductor thin film 4 are further formed thereon to form a Josephson junction 11 which is surrounded by an interlayer insulating film 5. The lower portion of the interlayer insulating film 5 is in contact with the surface of the thin metal film 10, and a part of the upper surface thereof is in contact with a layer-shaped oxide superconductor thin film 6 for wiring. Further, the layer-shaped oxide superconductor thin film 6 for wiring is in contact with the second layer-shaped oxide superconductor thin film 4 at a part of the lower surface thereof to form a superconductive contact and serves as an upper electrode of a Josephson junction. In addition, a layer-shaped oxide superconductor thin film 4' for a contact directly formed on the thin metal film 10 forms a super-conductive contact with the first layer-shaped oxide superconductor thin film 2 through the thin metal film 10 due to a proximity effect and serves as a lead electrode of a lower electrode of the junction. Next, a process for manufacturing the Josephson device of Figure 4 is described with reference to Figure 5. The first layer-shaped oxide superconductor thin film 2 (film thickness: 300 nm) of Bi-Sr-Ca-Cu-O type is formed on a substrate 1 using a MgO (100) surface at a substrate temperature of 700°C by an rf magnetron sputtering method. As a target there is used a composition of Bi : Sr Cu = 1.6 : 1 : 1.5 : 2 and a sputtering is : Ca : effected in a mixed atmosphere of Ar and O 2 at 0.5 Pa. Thereafter, a thin metal film 10 composed of Au (film thickness: 10 nm) is formed thereon by a resistance heating method without breaking a vacuum and a barrier layer 3 composed of Bi 2 O 3 (film thickness: 2 nm) and acting as a tunnel barrier is formed thereon by an rf magnetron sputtering method. As materials of the thin metal film 10, there are also used, alone or in admixture, Ag, Au, Pt, Pd and the like. A substrate temperature is preferably 400°C at this time. Thereafter, the second layer-shaped oxide superconductor thin film 4 composed of Bi-Sr-Ca-Cu-O is formed to a thickness of 300 nm without breaking the vacuum [Figure 5a]. The second layer-shaped oxide superconductor thin film 4 and the barrier layer 3 are patterned by a photolithographic process and Ar ion milling to form a junction 11 [Figure 5b]. A resist 7 is preferably composed of a negative type spin-coated to a thickness of 80 nm and a positive type spin-coated thereon to a thickness of 800 nm as a protective layer. It is convenient that etching is effected until the surface of the thin metal film 10 is exposed. An accelerating voltage of Ar ion is preferably about 500 V. Next, Bi 2 O 3 is deposited to a thickness of 300 nm at room temperature by an rf magnetron sputtering method to form an interlayer insulating film 5. It is immersed in acetone and slightly subjected to ultrasonic waves for lifting off. The remaining resist is removed by ashing in oxygen plasma, and the second layer-shaped oxide superconductor thin film 4 and the contact portion of the thin metal film 10 are cleaned [Figure 5c]. Next, layer-shaped oxide superconductor thin film 6 of Bi-Sr-Ca-Cu-O type for wiring is formed at a temperature of 700°C. A thickness thereof is 300 nm. Further, a photoresist 9 is spin-coated thereon to a thickness 800 nm, exposed and developed, and thus a pattern is formed for wiring and for a superconductive contact of the first and second layer-shaped oxide superconductor thin films 2 and 4 [Figure 5d]. The resist at this time can be either a negative type or a positive type. Next, a layer-shaped oxide superconductor thin film 6 for wiring is etched by an Ar ion milling. Thereafter, the remaining resist 9 is removed by ashing in oxygen plasma. This is annealed in an oxygen atmosphere to form a Josephson device. The contamination of interfaces can be prevented by forming the first layer-shaped oxide superconductor thin film 2, the thin metal film 10, the barrier layer 3 and the second layer-shaped oxide superconductor thin film 4 sequentially without breaking the vacuum. In addition, it is also considered that the thin metal film 10 serves as a buffer layer against a mutual diffusion between the barrier layer 3 and the first layer-shaped oxide superconductor thin film 2 so that a degree of freedom for selecting a material of the barrier layer 3 is increased. To provide an outstanding effect as the buffer layer, it is preferable to use a metal containing at least one selected from the group consisting of Ag, Au, Pt and Pd as the material of the thin metal film 10. Further, it is observed that the exposure to the oxygen plasma after the process of Figure 5c tends to enable the superconducting characteristics of the second layer-shaped oxide superconductor thin film 4 to be restored or improved. Furthermore, it is observed that a critical temperature of the junction between the first layer-shaped oxide superconductor thin film 2 and the second layer-shaped oxide superconductor thin film 4 before annealing, which is effected in the process of Figure 5e, tends to rise after the annealing. A Y-Ba-Cu-O type, Bi-Pb-Sr-Ca-Cu-O type, Tl-Ba-Ca-Cu-O type, Tl-Pb-Sr-Ca-Cu-O type and the like are used as layer-shaped oxide superconductor of the above embodiments in addition to the Bi-Sr-Ca-Cu-O type. These materials are characterized in that they are crystals including Cu-O layers. Figure 6 schematically shows, as an example, a layer-shaped crystal structure of Bi 2 Sr 2 Ca 2 Cu 3 O y . Numeral 12 designates the first layer-shaped oxide superconductor thin film, and Figure 6 shows a substrate crystal unit portion of this thin film 12. Although this Cu-O layer is considered to make some contribution to superconductivity, this view does not yet come to conclusion at present. An embodiment of layer-shaped oxide superconductor thin film of Bi-Sr-Ca-Cu-O type will be described below in detail as an example. Respective simple substances or compounds constituting these superconductors are evaporated as evaporating sources and periodically deposited on a substrate in a gas containing oxygen at a substrate temperature of 400 - 900°C. It is found that when an evaporating rate from each evaporating source is regulated in this vapor deposition, a phase having a critical temperature of at least 100 K appears corresponding to a deposition cycle. The inventors have discovered that when a substrate temperature is, in particular, in a range of 500 - 900°C, a phase having excellent crystallinity and a critical temperature of at least 100 K can be formed. The thin film formed exhibits a superconducting transition of about 80 K in the state as it is. Here, the superconducting thin film is manufactured at about 650°C or less to prevent diffusion occurring through a tunnel barrier layer at a Josephson junction. The first layer-shaped oxide superconductor thin film is formed as described above. There are several methods for periodically depositing the respective simple substances or compounds constituting the superconductor. In general, the periodically laminated layers can be formed in such a manner that a shutter is opened and closed in front of the evaporating sources when an MBE apparatus or multi-source EB vapor deposition apparatus is used or a type of gas is changed when a vapor phase epitaxy is used. An excellent laminated films also can be formed by a sputtering method using a plasma discharge or laser beam. In this case, it is considered that a high oxygen gas pressure, sputtering discharge or the like in the sputtering is convenient for the formation of a phase composed of the Bi type layer-shaped composite oxide and having a critical temperature of at least 100 K. In addition, the Bi layer-shaped composite oxide preferably contains Pb. As shown in Figure 7a, the formation of the first layer-shaped oxide superconductor thin film 2 on a substrate 1 by the method described above makes it easy to successively form a thin metal film 10 in the same vacuum chamber. More specifically, the thin film superconductor can be formed by using, as one of a plurality of evaporating sources, a metal, alloy or metal compound. After the thin metal film 10 is formed as described above, a specimen is taken out to the atmosphere to be subjected to necessary processings for a device making use of the Josephson junction using technologies such as photo-lithography, ion etching, chemical etching and the like, as shown in Figures 7b and 7c. After an interlayer insulating film 5 is formed, this specimen is disposed again in the vacuum chamber and a barrier layer 3 is formed as an insulating layer for forming the Josephson junction on the surface of the specimen. In general, the barrier layer 3 is conveniently formed by a sputtering method or EB vapor deposition method. A Josephson junction device exhibiting good superconducting characteristics can be reliably manufactured by forming the second layer-shaped oxide superconductor thin film 4 similar to the thin film 2 on the barrier layer 3 by the same method as above. To describe this thin film forming method in more detail, sputtering is started from Bi with a target 30 composed of Bi, as shown in Figure 8. Numeral 31 designates a Sr 2 Cu target; 32 designates a CaCu target, and 33 designates a Pt target. First, an Ar gas is introduced into a vacuum chamber and discharged to start sputtering. The substrate 1 is heated to 650°C by a heater 24, oxygen is introduced and sputtering conditions are set. The Bi target 30, the Sr 2 Cu target 31 or the CaCu target 32 is sputtered to deposit Bi, Group IIa elements or Cu on a surface. In this case, the thin film is formed with its composition in conformity with the stoichiometrical ratio of the Bi type layer-shaped oxide superconductor by setting sputtering conditions and moving a slit 23 defined to a shutter 22. More specifically, this is realized by regulating a rotating time of the shutter. After the first layer-shaped oxide superconductor thin film 2 is formed to a thickness of 50 nm (500 Å) according to this method as shown in Figure 6, the introduction of the oxygen gas is stopped and sputtering is effected only by Ar so that a thin film composed of Cu or Pt is formed to a thickness of several nanometers (tens of angstrom) or less on the surface of the first layer-shaped oxide superconductor thin film 2 to provide the thin metal film 10. A fine processing is effected on this specimen to provide an electric connection to the first layer-shaped oxide superconductor thin film using a technique of photolithography or the like, and thus an electrode is formed. Thereafter, the Josephson junction is masked by a metal mask, a photoresist or the like to form the interlayer insulating film 5. The interlayer insulating film is preferably composed of a perovskite structural type material, considering that the second layer-shaped oxide superconductor thin film 4 is formed on the surface thereof. For example, a Bi-Ti-O type compound containing Ti such as Bi 4 Ti 3 O 12 , Bi 2 Ti 4 O 11 or the like is preferably formed to a thickness of 500 nm (5000 Å) on the portion other than the Josephson junction. Thereafter, the mask is removed, the surface of the Josephson junction is exposed, the specimen is disposed in the vacuum chamber again and an insulating layer having a thickness of several nanometers (tens of angstrom) or less is formed thereon as the superconductive tunnel barrier layer 3 to provide a superconductive tunnel junction on the surface of the sample. Although this barrier layer 3 is conveniently formed by the above sputtering technique, any method capable of providing a homogeneous and uniform film can be used. A material of the barrier layer 3 is preferably a perovskite material such as Bi 4 Ti 3 O 12 , Bi 2 Ti 4 O 11 or the like, like the case of the interlayer insulating film 5, considering that the second layer-shaped oxide superconductor thin film 4 is formed on the surface thereof. Then, the superconductive tunnel junction exhibiting stable characteristics can be formed by forming the second layer-shaped oxide superconductor thin film 4 on the surface of the barrier layer 3. This second layer-shaped oxide superconductor thin film 4 is preferably formed in the same vacuum vessel following the formation of the barrier layer 3 composed of the perovskite insulating thin film. This thin film can be formed by the same method as that used for the formation of the above first layer-shaped oxide superconductor thin film by replacing the Pt target 33 by a perovskite material in Figure 8. The improvement in crystallinity of the superconductor thin film in the present invention is expected when selecting perovskite materials such as Bi 4 Ti 3 O 12 , Bi 2 Ti 4 O 11 and the like as materials of the interlayer insulating film and the barrier layer. Even if the same process is used for the formation of the thin film, the crystallinity may be deteriorated depending on the selection of a material of the insulating layer. It is observed that the diffusion of atoms occurs through the barrier layer in the composition of the Bi type layer-shaped composite oxide and Ca and the like are abnormally reduced, whereby the characteristics of the Josephson junction are deteriorated. In addition, the formation of the second layer-shaped oxide superconductor thin film 4 in the same vaccum chamber following the formation of the barrier layer 3 can further improve the crystallinity of the second layer-shaped oxide superconductor thin film 4. Next, an embodiment of a process for manufacturing a Josephson device using a Bi-Pb-Sr-Ca-Cu-O type layer-shaped oxide superconductor thin film will be described in detail. There are several methods for periodically depositing a Bi-Pb type oxide, Group IIIa elements and Cu. In general, the periodically laminated layers can be formed in such an manner that a shutter is opened and closed in front of evaporating sources when an MBE apparatus or multi-source EB vapor deposition apparatus is used, or a type of gas is changed when a vapor phase epitaxy is used. An excellent laminated films also can be formed by a sputtering method, wherein a high oxygen gas pressure, sputtering discharge or the like in the spattering is considered to be convenient for the formation of a Bi type phase having a critical temperature of at least 100 K. Figure 9 shows a structural view of a layer-shaped oxide superconductor thin film of Bi-Pb-Sr-Ca-Cu-O type. The layer-shaped oxide superconductor thin film 2 is formed on a substrate 1 by, for example, a sputtering method. Figure 10 shows a sputtering apparatus used in the present invention. In Figure 10, numeral 24 designates a heater, 40 designates a Bi-Pb alloy target, 41 designates a Sr-Cu alloy target, 42 designates a Ca-Cu alloy target. The substrate is kept at a high temperature of at least 600°C and all the targets are discharged. At this time, an arrangement is such that an amount of atoms coming from the respective targets is reduced so that a single atomic layer can be formed in a sufficiently controllable period of time. More specifically, a discharging power is suitably controlled, wherein the discharging power of the targets can be either a direct current or a high frequency. Although only a conductive target can be sputtered in a d.c. sputtering method, a insulating target can be also sputtered in a high frequency sputtering method. As described in the above embodiment using the Bi-Sr-Ca-Cu-O type layer-shaped oxide superconductor thin film, a rotatable shutter 22 having one window 23 defined therethrough is used. Since the shutter 22 is externally controlled to perfectly control the position of the window 23 and a stopping time thereof, atomic layers can be sequentially laminated on the substrate 1. With this manner, first, the window of the shutter is moved above the Bi-Pb alloy target to enable only the atoms sputtered from the Bi-Pb alloy to come onto the substrate. The sputtered atoms are oxidized by oxygen in a sputtering atmosphere and forms a (Bi, Pb) 2 O 2 layer on the substrate. Thereafter, the shutter is sequentially moved to provide an objective lamination structure: for example, a Sr-O layer 2b, Cu-O layer 2c, Ca layer 2d, Cu-O layer 2c, Ca layer 2d, Cu-O layer 2c, Sr-O layer 2b and (Bi, Pb) 2 O 2 layer are formed on a (Bi, Pb) 2 O 2 layer 2a, respectively, as shown in Figure 9. At the time, the compositional ratio of the respective layers is controlled by a period of time during which the shutter is opened and a power applied to the targets. With this manner, each thin film is formed in conformity with the stoichiometrical ratio of the Bi type layer-shaped oxide superconductor. Although the obtained thin film exhibits a superconducting transition in the state as it is, a thin film which exhibits a transition temperature of at least 100 K can be provided more securely when it is treated at 850°C in an oxygen atmosphere for five hours. Further, an alternative process for manufacturing a Bi-Pb-Sr-Ca-Cu-O type layer-shaped oxide superconductor thin film will be described with reference to Figure 11. A target of Bi 24 Pb 2 O 40 is provided in addition to the three targets used in the embodiment described with reference to Figures 9 and 10. First, an Ar gas is introduced and then a non-superconducting thin film 33 of Bi 24 Pb 2 O 40 is formed on a substrate 1 heated to 200°C while a shutter prevents atoms sputtered by the other targets from coming thereon. Thereafter, the shutter prevents atoms sputtered by the target of Bi 24 Pb 2 O 40 to form a thin film 32 of (Bi, Pb)-Sr-Ca-Cu-O type. Further, a thin film 33 of Bi 24 Pb 2 O 40 is formed on the formed thin film again. Figure 11 shows the structure of the thin films formed as described above. They are treated at 850°C in an oxygen atmosphere for five hours to provide a layer-shaped oxide superconductor thin film 2 exhibiting stable superconducting characteristics. The non-superconducting thin film 33 is used to prevent the evaporation of Pb when a high temperature treatment is effected, and the same effect can be expected when a Bi 2 O 3 thin film is formed using a target of Bi 2 O 3 in place of the target of Bi 24 Pb 2 O 40 . Although the embodiments of the present invention use the substrate 1 of the MgO (100) surface, a surface of a substrate is not limited to this surface and any other surface may be used so long as a superconductor thin film can be deposited thereon. Although embodiments of the present invention as claimed are described using a Bi-Sr-Ca-Cu-O or Bi-Pb-Sr-Ca-Cu-O type oxide as the first layer-shaped oxide superconductor thin film 2, the second layer-shaped oxide superconductor thin film 4 and the layer-shaped oxide superconductor thin film 6 for wiring (in combination with an interlayer inslulating film 5), the same effect can be provided when using a composite compound of A-B-Cu-O type or A-B-Cu-O-S type, where A represents at least one selected from the group consisting of Sc, Y, La and lanthanoid elements having the atomic numbers of 57 - 71 except the atomic numbers 57, 58, 59 and 61; B represents at least one selected from the group consisting of Group IIa elements such as Ba, Sr and the like; and a concentration of each of the elements A, B and Cu, i.e., [A], [B] and [Cu] satisfy an inequality: 0.5 ≦ ([A] + [B])/[Cu] ≦ 2.5. Although the examples described above use the resist composed of two layers of negative and positive type resists, it is not limited to these resists and any resist can be used so long as it has the same function. Also, although a thin metal film is formed between the first layer-shaped oxide superconductor thin film and a barrier layer in the above embodiments, it can be formed either between the second layer-shaped oxide superconductor thin film and the barrier layer or on both sides of the barrier layer. Further, although a sputtering method, one of physical depositing methods, is described as a method of depositing a superconductor thin film and a barrier layer in the above embodiments, other physical deposition methods such as a vacuum vapor deposition method, an electron beam vapor deposition method, an MBE method and a laser deposition method, and further chemical deposition method such as a CVD method, an MOCVD method and the like are applicable in the manufacture of the Josephson device of the present invention. As described above, according to the present invention, a Josephson device capable of operating at a temperature higher than that of liquid nitrogen (77.3 K) can be realized and applied to a superconducting quantum interference device (SQUID), a standard voltage device, a mixer, a computer and the like, and thus this invention is variable from the industrial point of view. The present invention should not be construed to be restricted to the above embodiments and examples.

Claims: A Josephson device comprising a junction formed by forming a first bismuth-free layer-shaped oxide superconductive thin film (2) including a plurality of Cu-O layers on a substrate (1), a barrier layer (3) thereon and a second bismuth-free layer-shaped oxide superconductive thin film (4) on the barrier layer (3), wherein said barrier layer (3) is a layer-shaped compound containing Bi oxide and a) at least one selected from the group consisting of Ti, Nb, Ta and W; or b) at least one selected from the group consisting of Ti, Nb and Ta and at least one selected from the group consisting of Pb, Ca, Sr and Ba; or c) Ti and at least one metal selected from the group consisting of Na, K, Fe, Nb and Ta; or d) Nb and K. A Josephson device according to claim 1, wherein an interlayer insulating film (5) is formed above said first layer-shaped oxide superconductor thin film (2) and surrounds said junction, and a layer-shaped oxide superconductor thin film for wiring (6) is formed on said second layer-shaped oxide superconductor thin film (4) of a said junction. A Josephson device according to claim 2, wherein a material of said interlayer insulating film (5) is a Bi oxide-type layer-shaped compound. A Josephson device comprising a junction formed by forming a first layer-shaped oxide superconductor thin film (2) including a plurality of Cu-O layers on a substrate (1), a barrier layer (3) thereon and a second layer-shaped oxide superconductor thin film (4) on the barrier layer (3), and comprising an interlayer insulating film (5) being formed above said first layer-shaped oxide superconductor thin film (2) and surrounding said junction, and a layer-shaped oxide superconductor thin film for wiring (6) being formed on said second layer-shaped oxide superconductor thin film (4) of said junction, wherein a material of said barrier layer (3) is a layer-shaped compound containing Bi oxide. A Josephson device according to claim 4, wherein said interlayer insulating film (5) is a layer-shaped compound containing Bi oxide. A Josephson device according to any preceding claim, wherein a thin metal film (10) consisting of a material containing at least one selected from the group consisting of Ag, Au, Pt and Pd is disposed on at least one of the sides of said barrier layer (3) where any of said first and second layer-shaped oxide superconductor thin films (2, 4) is brought into contact with said barrier layer (3). A Josephson device according to any of claims 2 to 6, wherein a layer-shaped oxide superconductor thin film for a contact (6) is formed in contact with said first layer-shaped oxide superconductor thin film (2) located in the portion where said interlayer insulating film (5) is not formed. A Josephson device according to claim 4 or 5, wherein said layer-shaped oxide superconductor thin film (2, 4, 6) is selected from the group consisting of Bi type layer-shaped oxide superconductor thin films, A-B-Cu-O type and A-B-Cu-O-S type layer-shaped oxide superconductor thin films, where A represents at least one selected from the group consisting of Sc, Y, La and lanthanoid elements having the atomic numbers of 57 - 71 except 57, 58, 59 and 61; B represents at least one selected from the group consisting of Group IIa elements; and a concentration of each of the elements A, B, and Cu; i.e. [A], [B], and [Cu] satisfy an inequality: 0.5 ≤ ([A] + [B]) / [Cu] ≤ 2.5. A Josephson device according to any preceding claim, wherein a material of said barrier layer (3) or said interlayer insulating film (5) further includes at least one selected from the group consisting of strontium oxide, calcium oxide, barium oxide, zinc oxide, magnesium oxide and zirconium oxide, or a mixture thereof. A Josephson device according to any preceding claim, wherein said layer-shaped compound is Bi 2 Ti 4 O 11 . A Josephson device according to any of claims 4 to 8, wherein said layer-shaped compound is Bi 4 Ti 3 O 12 . A process for manufacturing a Josephson device, comprising forming on a substrate (1) the first layer-shaped oxide superconductor thin film (2) including a plurality of Cu-O layers, and a barrier layer (3) in the same vacuum chamber; defining patterns to said barrier layer (3) and said first layer-shaped oxide superconductor thin film (2); forming an interlayer insulating film (5) on said barrier layer (3); removing said interlayer insulating film (5) in a region serving as a junction; effecting exposure to oxygen plasma; forming the second layer-shaped oxide superconductor thin film (4) in contact with a part of the surface of said barrier layer (3) and defining patterns to said second layer-shaped oxide superconductor thin film (4), wherein a material of said barrier layer (3) is a layer-shaped compound containing Bi oxide. A process for manufacturing a Josephson device, comprising forming on a substrate (1) laminated layers comprising a barrier layer (3) formed between the first and second layer-shaped oxide superconductor thin films (2, 4) including a plurality of Cu-O layers in the same vacuum chamber; defining patterns to said barrier layer (3) and said second layer-shaped oxide superconductor thin film(4); forming an interlayer insulating film (5) on said first and second layer-shaped oxide superconductor thin films (2, 4); removing said interlayer insulating layer (5) on a region serving as a junction; and further effecting exposure to oxygen plasma, wherein a material of said barrier layer (3) is a layer-shaped compound containing Bi oxide. A process for manufacturing a Josephson device according to claim 12 or 13, wherein a thin metal film (10) is formed on the surface of said first oxide layer-shaped superconductor thin film (2) in said same vacuum chamber as that in which said first oxide layer-shaped superconductor thin film (2) has been formed and further said barrier layer (3) is formed on said thin metal film (10) in said same vacuum chamber. A process for manufacturing a Josephson device according to any of claims 12 to 14, wherein exposure to oxygen plasma is effected after patterns are defined to said second oxide layer-shaped superconductor thin film (4); a layer-shaped oxide superconductor thin film for wiring (6) is formed in contact with said second layer-shaped oxide superconductor thin film (4) and patterns are defined to said layer-shaped oxide superconductor thin film for wiring (6). A process for manufacturing a Josephson device according to claim 15, wherein a contact of said first layer-shaped oxide superconductor thin film (2) is exposed before the formation of said layer-shaped oxide superconductor thin film for wiring (6); exposure to oxygen plasma is effected; patterns are defined to said layer-shaped oxide superconductor thin film for wiring (6) to separate the same for wiring and contact. A process for manufacturing a Josephson device according to any of claims 12 to 16, wherein a heat treatment is effected in an oxygen atmosphere at a temperature higher than crystallizing temperatures of said layer-shaped oxide superconductor thin films (2, 4, 6) after said patterns are finally defined to said layer-shaped oxide superconductor thin films. A process for manufacturing a Josephson device according to any of claims 12 to 17, wherein the forming of said first and second layer-shaped oxide superconductor thin films is carried out by sputtering, one by one in order, respective targets being of the composition Bi : Sr : Ca : Cu = 1.6 : 1 : 1.5 : 2; or of Bi, Sr 2 Cu, CaCu; or of Bi-Pb, Sr-Cu, Ca-Cu and Bi 24 Pb 2 O 40 .

Inventors: ADACHI HIDEAKI, ENOKIHARA AKIRA, HATTA SHINICHIRO, HIGASHINO HIDETAKA, KOHIKI SHIGEMI, MATSUCHIMA TOMOAKI, MIZUNO KOICHI, SETSUNE KENTARO, WASA KIYOTAKA, ADACHI, HIDEAKI, ENOKIHARA, AKIRA, HATTA, SHINICHIRO, HIGASHINO, HIDETAKA, KOHIKI, SHIGEMI, MATSUSHIMA, TOMOAKI, MIZUNO, KOICHI, SETSUNE, KENTARO, WASA, KIYOTAKA, MATSUCHIMA, TOMOAKI
Applicants: MATSUSHITA ELECTRIC IND CO LTD, MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
Application year: 1989
Main classification: H01L39
IPC codes: H01L39