Method and apparatus for manufacturing superconducting ceramics materials

Abstract: A high Tc superconducting ceramics material is produced by a method in which a mixture of chemicals in suitable amounts is deposited on a surface in thin film form by sputtering, electron beam evaporation and so forth. The deposited mixture is then annealed to have superconducting property. Particularly, a magnetic field is applied to the mixture in a pre­ determined direction during depostion and/or anneal­ ing. By virtue of the application of magnetic field, the orderliness of molecular arrangement is enhanced and an elevated transition temperature Tc is obtained.

Description: The invention relates to a method and apparatus for manufacturing a superconductive ceramic film. More specifically the invention is concerned with making a superconductive ceramic film in a magnetic field. BACKGROUND OF THE INVENTION It has long been known that metals such as mercury and leas, intermetallics such as NbNd, Nb 3 Go and NbGa and ternary materials such as Nb 3 (Al 0.8 Ge 0.2 ) demonstrate superconductivity. However, the transition temperature, Tc onset, of such long known conventional superconducting materials cannot exceed 25°K. In more recent years, superconducting ceramics have attracted widespread interest. A new material was first reported by researchers at the Zurich laboratory of IBM Corp. as Ba-La-Cu-O-type high temperature superconducting oxides. Subsequently, La-Sr-Cu(II)-O-type superconducting oxides were also proposed. Other types of superconducting materials have been found in general form YBa 2 Cu 3 O 6-8 . It has not been successed hitherto to obtain a superconducting ceramic material having a high Tc higher than 30K by a method in which a mixture of chemicals in a suitable composition is compacted and fired. These superconducting ceramics form a quasi-molecular atomic unit in a perovskite-like structure whose unit cell is constructed with one layer in which electrons have essentially one-dimensional motion, whereas a number of crystalline grains are arranged at random with diverse crystalline directions, and therefore the critical current density is substantially limited. Because of this, it is desired to elevate Tco, the temperature at which resistance vanishes, above the levels previously obtained and preferably above the boiling point of nitrogen (77K) or even higher and also to increase critical current densities. In order to solve such shortcomings of prior arts, we have proposed an improved method, as described in our Japanese Patent Application No. sho62-75205 filed on March 27, 1987, entitled "Manufacturing Method of superconducting Materials". EP-A-284354 was cited by the European Patent Office under Art. 54(3) and (4) EPC during examination. The citation describes a method and apparatus for manufacturing superconductive ceramic material, in which a mixture of chemicals in suitable amounts is deposited on a surface in thin film form by sputtering or electron beam evaporation. The deposited mixture is then annealed to have superconducting property. The following documents were also cited during examination as describing similar methods of manufacture, namely: Japanese Journal of Applied Physics, vol. 26, no. 7, July 1987, pages L1199-L1201 and pages L1221-L1222; and Physical Review Letters, vol. 58, Abs. 25, 22.06.87, pages 2684-2686. OBJECTS AND SUMMARY OF THE INVENTION The present invention relates to further improvement and advancement of our previous method for applying it to methods of making thin films of superconducting oxide materials. The invention aims to provide superconducting ceramics having a higher transition temperature (nearer room temperature) than hitherto and to apparatuses for manufacturing such superconducting ceramics. In accordance with one aspect of the invention there is provided a method of manufacturing a superconductive ceramic film comprising: providing a sputtering target formed of superconductive ceramic material; and sputtering said target so as to deposit a thin film of superconductive ceramic material onto a surface of a substrate; the method being characterized by: applying a magnetic field in the vicinity of the substrate surface during the deposition process with the magnetic field selected so as preferentially to order the crystal structure of the superconductive film in a predetermined direction. In accordance with another aspect of the invention there is provided an apparatus for use in the manufacture of super-conductive ceramic films, said apparatus comprising: an evacuable deposition chamber; a holder for a sputtering target formed of superconductive ceramic material; a holder for a substrate having a surface upon which a super-conductive ceramic film is to be deposited; and means for causing sputtering of said target so as to effect deposition of a film of the superconductive ceramic material of the target onto the substrate surface; the apparatus being characterized by: means for applying a magnetic field in the vicinity of the substrate surface during the deposition of said film with the magnetic field selected so as preferentially to order the crystal structure of the superconductive film in a predetermined direction. It has been confirmed that the critical current density of superconducting thin films with reference to current across the c plane can be increased as dense as 1 x 10 4 A/cm 2 by applying a magnetic field to the deposition surface during the deposition of thin films. The critical current density was further increased by simultaneously heating the crystalline structure to 300-1000°C during the application of magnetic field. The representative compositions of superconducting oxide materials can be seen in the later portion of the description. Superconducting materials are constructed in perovskite-like structures as illustrated in Fig. 1 in accordance with the method and apparatus embodying the present invention. The structure comprises cupper atoms 2, an intervening cupper atom 3, oxygen atoms 5 and 6 surrounding the cupper atoms, oxygen vacancies 7, atoms 1 belonging to Group IIIa of the periodic table such as Y, and atoms 4 belonging to Group IIa such as Ba. The super-conduction in such a structure may be explained on the grounds that electron pairs are drifted along the layer planes of the layered structures consisting of the oxygen atoms 5 and the central cupper atoms 2 (the plane made of a and b axes, i.e. the c plane) by virtue of the interaction between the oxygen and cupper atoms. Furthermore, the most successful theory of pairing of electrons was the BCS theory, in accordance with which the pairing might be established by mediation of phonons. It has, however, been confirmed that electron pairs each consisting of electrons having opposite spins are mediated by the quantum associated with the interaction between the rare earth element 1 (screw magnetic substance) and the oxygen vacancy 7, called "magnon". The magnon is regarded to function as a key quasi-particle which allow electron pairs to pass along the layered structure. For this reason, the respective crystalline axes of grains can be aligned by applying an external magnetic field to thin films preferably while being heated, during formation of the formation, whereas interaction of magnon or the magnetic substance undergoes, and therefore single crystals can be easily produced at low temperatures. Furthermore, the critical current densities along the c plane are larger than those normal to the c plane by two or much orders of magnitude. Because of this, it is very important to align crystalline directions even for fabricating polycrystalline thin films. The method and apparatus embodying the invention is effective when applied to deposition of oxide ceramics prepared by mixing oxides of constituents of superconducting materials followed by firing the same, the deposition being carried out by sputtering, electron ion beam evaporation, ion plating, chemical vapor deposition and the like, each carried out at negative pressures, or by spraying, screen press printing and the like, each carried out at air pressure. By applying a magnetic field preferably not weaker than 0.3 T, preferably simultaneously heating to 300-1000°C, superconducting thin films are rearranged with c axes of crystals nearly or exactly aligned in the direction of the applied magnetic field so that respective crystal grains of polycrystals become relatively large and therefore the barriers between the grains are reduced, whereby a quasi-single crystalline structure can be established. Accordingly, in case of polycrystalline structures, the critical current densities are increased from conventional 10 2 A/cm 2 to 10 4 -10 5 A/cm 2 measured at 77K, which is as large as 1/5 of those in case of single crystalline structures. Furthermore, it becomes possible to make single crystalline thin films having large areas which is one of targets of research in the technical field of oxide superconductors. In addition to the application of a magnetic field, it is also effective for elevation of Tc to apply an electric field normal to the magnetic field. The magnetic field can be applied to a surface on which deposition takes place by inducing the magnetic field at a distant site and introducing the effect of the magnetic field to the surface by means of a magnetic circuit made of a magnetic substance such as nickel or iron. The above and other features of the invention are set forth with particularity in the appended claims and together with advantages thereof will become clear to those possessed of the relevant skills from consideration of the following description of exemplary embodiments given with reference to the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is an illustration of a Perovskite-like structure, already discussed hereinabove; Figure 2 is a schematic diagram showing an apparatus embodying the invention; and Figure 3 is an illustration of a substrate holder. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Described hereinafter are several examples illustrating the manufacture by a method embodying the present invention of superconducting ceramics conforming to the stoichoimetric formulae (A 1-x B x ) y Cu z O w , where A is one or more elements of Group IIIa of the Periodic Table, e.g., the rare earth elements, B is one or more elements of Group IIa of the Periodic Table, e.g. the alkaline earth metals including beryllium and magnesium, and 0<x<1; y = 2.0 - 4.0, preferably 2.5 - 3.5; z = 1.0 - 4.0, preferably 1.5 - 3.5; and w = 4.0 - 10.0, preferably 6.0 - 8.0. Prescribed amounts of BaCo 3 , CuO and Y 2 O 3 (High Purity Chemical Industries Co. Ltd. 99.95% or higher) were used for preparing a superconducting ceramic material of the above formula where x=0.67, y=3, z=3 and w=6-9, i.e., in consistence with (YBa 2 )Cu 3 O 6-9 . The factor "w" was controlled by adjusting the sintering condition. After being mixed in a ball mill, the high purity chemicals were pressed in a capsule at 100kg/cm and formed into a cylindrical shaped tablet of 25 mm diameter and 3 mm height. The tablet was heated (fired) and oxidized at 500-1400°C, e.g., 950°C for 8 hours in an oxdizing atmosphere such as in air, this step being called pre-firing hereinafter. Fig. 2 is a schematic diagram showing an apparatus for manufacturing superconducting films in accordance with the present invention. The apparatus comprises a vacuum chamber 41, an evacuation system 25, a gas introducing system 40 having three branchs 32, 33 and 34, a target holding structure 10, a substrate holder 31, a magnetic circuit comprising a magnetic potential source 26, one of magnetic poles 27 just behind the substrate holder 31 and the other magnetic pole 14 just behind a backing plate 13 of the holding structure 10 on which a target 12 is mounted. The holding structure is supplied with a high negative voltage 20 by means of a voltage source and cooled with cooling water circulated through an inlet port 15 and an outlet port 15′. When DC sputtering is desired the holder 31 is grounded, while when AC sputtering is desired the holder 31 is placed in electrically floating condition. The structure 10 is isolated from the chamber 41 by a Teflon insulator 18. The periphery of the sturcture is protected by a shield plate 17. The substrate holder 31 is provided with a heater 29 in order to heat a substrate 30 on which deposition is carried out by sputtering. The magnetic field 28 induced between the structure 10 and the holder 31 is controlled by means of the potential source 26. The locations of the holding structure 10 and the substrate holder 31 are such that the distance between the substrate 30 and the target 12 is 2-15 cm. The evacuation system 25 comprises a turbo molecular pump 21, a pressure control valve 22 and a rotary pump 23. Ceramic tablets fired as described supra is mounted on the structure 10 as a sputtering target 12 in the form in correspondence with the structure of thin films to be deposited on the substrate 30. The crystalline directions of the tablets is aligned with those of the thin films to be deposited, so that the crystallinity of the laminate thin film is enhanced. The magnetic field induced between the target 12 and substrate 30 is controlled by the potential source 26 to be preferably not weaker than 0.3 T, e.g. 0.5 T. Stronger magnetic fields are preferable in general. After evacuating the chamber 41, argon, oxygen and a halogen compound gas such as NF 3 are introduced into the chamber 41 at appropriate pressures through the branchs 32, 33 and 34 of the introduction system 40 respectively. By virtue of a high voltage electric power inputted to the target holder 16, the target 12 is sputtered and deposited on the substrate 30 in a magnetic field. Example 1: A target 12 of 25 mm diameter was prepared in consistence with the stoichiometric composition YBa 2 Cu 3.8 0 6-8 . The distance between the target and the substrate was 3 cm. The pressure of argon in the chamber was 4 x 10 -1 Pa. The oxygen amount introduced was 20% of the argon amount. The input power for DC sputtering was 500W. The magnetic field strength was 0.2 T at the substrate surface. The substrate 30 was heated to 750°C and rotated during deposition around its axis parallel to the direction of magnetic field in order to perform deposition uniformly. In this deposition condition, ceramic films of 0.5 to 3 microns thickness were deposited at 5-100Å/min, e.g. 50Å/min. Then, the ceramic films were annealed at 850°C for 3 hours in an oxygen atmosphere (at air pressure). followed by gradually cooling and anealing at 350-500°C for two hours. As a result, superconducting oxide ceramic films were obtained which have a modified perovskite-like structure of orthorhobic system. The Tco was measured to be 98K. The critical current density was measured to be 3 x 10 -4 A/cm 2 . The (a,b) planes of the target 12 and the film 50 were normal to the plane of the drawing sheet. Example 2: The procedure of Example 1 was repeated with the exception as follow. Particularly, the substrate holder as illustrated in Fig.3 was employed in place of that illustrated in Fig.2. The holder carries a pair of magnet poles 14 and 27 between which a magnetic field parallel to the substrate 30 is induced as depicted with arrow 28. A target 12 of 25 m m diameter was prepared in consistence with the stoichiometric composition Y 0.5 Yb 0.5 Ba SrCu 3.6 0 6-8. The (a,b) planes of the target 12 and the film 50 were chosen normal to the planes of the backing plate 13 and the substrate 31. The substrate 30 was made of glass, alumina or ZrO 2 and coated with a platinum electrode by sputtering at 500°C. A superconducing film 50 was deposited on the platinum electrode followed by coating with a gold electrode. The Tc was measured to be 93°C. The critical current density between the platinum and gold electrodes was measured to be 2.4 x 10 4 A/cm 2 . When the critical current density was measured with reference to current passing through parallel to the film, it was only 1 x 10 3 A/cm 2 . Example 3: The procedure of Example 1 was repeated with the exception specified below. Particularly, a MgO substrate of (100) plane or a SrTiO 3 substrate of (110) plane was employed in place of the substrate 31. The magnetic field was 1.5 T at the substrate surface. As a result, single-crystalline thin films having 1.5 microns thickness and 1 cm 2 or larger area were formed. Example 4: Substantially same procedure as in Example 2 was repeated with exception specified below. Particularly, a MgO substrate of (110) plane or a SrTiO 3 substrate (110) was employed in place of the substrate 31. The magnetic field was 1.5 T at the substrate surface. As a result, single-crystalline thin films having 1.5 µm (microns) thickness and a surface area as broad as 5 mm 2 were formed. The foregoing Examples are merely illustrative of the invention, and do not include all of the combinations of elements and process variations which may be used to produce superconducting ceramic material in accordance with the invention, other combinations also being effective to provide improved superconducting materials. Superconducting ceramics for use in accordance with the present invention also may be prepared in consistence with the stoichoimetric formulae (A 1-x B x ) y Cu z O w X v , where A is one or more elements of Group IIIa of the Periodic Table, e.g., the rare earth elements, B is one or more elements of Group IIa of the Periodic Table, e.g., the alkaline earth metals including beryllium and magnesium, X is one or more elements of a group consisting of Ge, Sn, Pb, F and Cl, and 0<x<1; y = 2.0 - 4.0, preferably 2.5 - 3.5; z = 1.0 - 4.0, preferably 1.5 - 3.5; w = 4.0 - 10.0, preferably 6.0 - 8.0; and v = 0 - 3. Also, superconducting ceramics for use in accordance with the present invention may be prepared consistent with the stoichiometric formulae (A 1-x B x ) y Cu z O w , where A is one or more elements of Group Vb of the Priodic Table such as Bi, Sb and As, B is one or more elements of Group IIa of the Periodic Table, e.g., the alkaline earth metals including beryllium and magnesium, and x = 0.3 - 1; y = 2.0 - 4.0, preferably 2.5 - 3.5; z = 1.0 - 4.0, preferably 1.5 - 3.5; and w = 4.0 - 10.0, preferably 6.0 - 8.0. Examples of this general formula are BiSrCaCuCu 2 O x and Bi 4 Sr 3 Ca 3 Cu 4 O x . Tc onset and Tco samples in consistent with the formula Bi 4 Sr y Ca 3 Cu 4 O x (y is around 1.5) were measured to be 40-60K, which is not so high. Relatively high critical temperatuers were obtained with samples conforming to the stoichiometric formulae Bi 4 Sr 4 Ca 2 Cu 4 O x and Bi 2 Sr 3 Ca 2 Cu 2 O x . The number x denoting the oxygen proportion is 6-10, e.g. around 8.1. Such superconducting materials can be formed by screen press printing, vacuum evaporation or CVD. While a description has been made for several embodiments, the present invention should be limited only by the appended claims and should not be limited by the particular examples. For the avoidance of doubt it is to be noted that all references herein and in the appended claims to the Periodic Table and to specific Groups of the Periodic Table are to be understood to refer to the Japanese Periodic Table and to the Groups thereof as described in the Iwanami "Physics and Chemistry Dictionary". As compared with the Group designations of the Periodic Table as described in "The Penguin Dictionary of Science" for example, which are the Group designations commonly accepted throughout Europe, Groups Ia, IIa, VIII, Ib, IIb and 0 are the same in the Japanese and European Periodic Tables, Groups IIIa, IVa, Va, VIA and VIIa of the Japanese Period Table correspond respectively to Groups IIIb, IVb, Vb, VIb and VIIb of the European Periodic Table, and Groups IIIb, IVb, Vb, VIb and VIIb of the Japanese Periodic Table correspond respectively to Groups IIIa, IVa, Va, VIa and VIIa of the European Periodic Table.

Claims: A method of manufacturing a superconductive ceramic film comprising: providing a sputtering target formed of superconductive ceramic material; and sputtering said target so as to deposit a thin film of superconductive ceramic material onto a surface of a substrate; the method being characterized by: applying a magnetic field in the vicinity of the substrate surface during the deposition process with the magnetic field selected so as preferentially to order the crystal structure of the superconductive film in a predetermined direction. A method as claimed in claim 1 wherein the strength of said magnetic field is at least 0.2 or 0.3T. A method as claimed in claim 1 or 2 wherein the sputtering target is formed by mixing together powdered chemical constituents of the superconductive ceramic material and compacting and firing the mixture. A method as claimed in claim 1 or 2 or 3 and further comprising thermally annealing the superconductive film deposited on the substrate surface in the presence of a magnetic field. A method as claimed in any of claims 1 to 4 wherein the superconductive ceramic material of the deposited film conforms to the stoichiometric formula (A 1-x B x ) y Cu z O w where A comprises one or more elements from Group IIIa of the Japanese Periodic Table, B comprises one or more elements from Group IIa of the Japanese Periodic Table, and 0<x<1, y=2-4, z=1-4 and w=4-10. A method as claimed in any of claims 1 to 4 wherein the superconductive ceramic material of the deposited film conforms to the stoichiometric formula (A 1-x B x ) y Cu z O w where A comprises one or more elements from Group Vb of the Japanese Periodic Table, B comprises one or more elements from Group IIa of the Japanese Periodic Table, and x=0.3-1, y=2-4, z=1-4 and w=4-10. A method as claimed in claim 5 or 6 wherein the superconductive ceramic material of the deposited film has a perovskite-like crystalline structure the c axis whereof is aligned with the direction of application of the magnetic field, and the sputtering target is arranged with its crystalline structure aligned with that of the deposited film. An apparatus for use in the manufacture of superconductive ceramic films, said apparatus comprising: an evacuable deposition chamber (41); a holder (10) for a sputtering target (12) formed of superconductive ceramic material; a holder (31) for a substrate (30) having a surface upon which a superconductive ceramic film is to be deposited; and means (20) for causing sputtering of said target (12) so as to effect deposition of a film of the superconductive ceramic material of the target onto the substrate surface; the apparatus being characterized by: means (14, 26, 27) for applying a magnetic field in the vicinity of the substrate surface during the deposition of said film with the magnetic field selected so as preferentially to order the crystal structure of the superconductive film in a predetermined direction. An apparatus as claimed in claim 8 wherein the strength of said magnetic field is at least 0.2 or 0.3T. An apparatus as claimed in claim 8 or 9 wherein said magnetic field applying means (14, 26, 27) comprises a magnetic circuit comprising a first magnetic pole (14) positioned behind the target holder (10), a second magnetic pole (27) positioned behind the substrate holder (31), and a magnetic source (26) developing a magnetic field between said first and second magnetic poles (14, 27) perpendicular to said substrate holder (31). An apparatus as claimed in claim 8 or 9 wherein said magnetic field applying means (14, 26, 27) comprises a magnetic circuit comprising a first magnetic pole (14) positioned on one side of the substrate holder (31), a second magnetic pole (27) positioned on a second side of the substrate holder (31) spaced apart from the first side, and a magnetic source (26) developing a magnetic field between said first and second magnetic poles (14, 27) parallel to said substrate holder (31). An apparatus as claimed in any of claims 8 to 11 wherein the substrate holder (31) incorporates a heater (29).

Inventors: YAMAZAKI SHUNPEI, YAMAZAKI, SHUNPEI
Applicants: SEMICONDUCTOR ENERGY LAB, SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Application year: 1988
Main classification: H01L39
IPC codes: H01L39