OSCILLATOR CIRCUIT COMPRISING AN OSCILLATOR WITH A CMOS GATE

Abstract: The invention relates to an oscillator circuit comprising an oscillator (OSC) with a CMOS gate. A suitably proportioned CMOS gate consumes power only when its gate output, assumed to be capacitively loaded, is charged. Using this fact, a relation can be deduced between an oscillation frequency of the oscillator (OSC) and a ratio of the voltage (V₂₂) across the CMOS gate and the conduc­ ted current. The invention incorporates the actual oscillator (OSC) in a circuit so that this ratio remains substantially constant and becomes substantially independent on temperature variations. To achieve this, the oscillator (OSC) is included in a first current branch (II-1) having a first current source (20), a second current branch (II-2) comprising a second current source (21) being arranged parallel to the first current branch (III-1), in series with a resis­ tance (R), the current sources (20, 21) supplying currents with a fixed ratio. The current branches (II-1, II-2) are coupled to one another by means of control means (22, 23) for controlling the current sources so that the ratio of a voltage (V₂₂) across the CMOS gate and a voltage (V₂₁) across the resistance (R) is constant.

Description: The invention relates to an oscillator circuit, comprising an oscillator with a CMOS gate. Oscillator circuits of this kind are known from Radio-Electronics, 58 (1), January 1987, page 65. As is known, a suitably proportioned CMOS gate consumes power only if a quantity of charge Q is transferred from a first supply terminal, through a PMOS transistor, to a gate output which is loaded by a capacitance C. If this takes place with a frequency f, the CMOS gate consumes a current I equal to I=f.Q. Because the gate output of a CMOS gate is fully charged or discharged to the applied supply voltage levels wherebetween a potential V prevails, the current consumed equals I =f·C·V. In the known oscillator circuits the frequency varies in dependence of, for example the temperature because the characteristics of CMOS transistors are temperature-dependent. In the article "Temperature compensation in CMOS oscillators", by B. Ward and A. Bendeli, published in Electronic Engineering, Vol 54, No. 662, February 1982, page 25, a circuit for temperature compensation in a CMOS oscillator is disclosed. In this known circuit a controllable power supply provides a temperature dependent output voltage for the CMOS-oscillator, which output voltage is regulated by a reference circuit in accordance to the temperature. The level of the output voltage is derived from a temperature sensor which generates a temperature dependent current. It is an object of the present invention to provide an oscillator circuit which comprises an oscillator with a CMOS gate and of which the output frequency is stabilised without the use of a temperature sensor. To achieve this an oscillator circuit, comprising an oscillator with a CMOS gate and frequency stabilisation means in accordance with the invention is characterised in that the reference circuit comprises as a reference element a substantially temperature-independent linear resistance element and means for applying to the CMOS gate a voltage and a current the ratio between said voltage and current being proportional to the ratio between a voltage and a current across said resistance element. In the circuit according to the invention the ratio I/V in the CMOS oscillator is related to the value of a temperature independent resistor. From the expressions for the consumed current it follows that the frequency f is substantially constant if the ratio I/V is kept constant, the capacitance C being a constant. An embodiment of an oscillator circuit in accordance with the invention is characterized in that the frequency stabilization means comprise a first current branch and a second current branch which are connected to a first supply terminal and which comprise a first and a second controllable current source, respectively, for powering the CMOS gate which is connected to a second supply terminal and a linear resistance element which is connected to the second supply terminal, respectively, the ratio of the currents supplied by the current sources being substantially constant, and also comprise control means which are connected between the CMOS gate and the resistance element on the one side and the current sources on the other side, which control means control the current sources so that the ratio of the voltage across the CMOS gate and a voltage present across the resistance element is constant. By fixing the ratio of the currents and by keeping the voltage present across the resistance element equal to the voltage present across the CMOS gate, the ratio I/V is fixed. The resistance element is preferably of a type having a substantially temperature-independent resistance value in the relevant temperature range (for example, from -40°C to +120°C). A further embodiment of an oscillator circuit in accordance with the invention is characterized in that the first and the second current source comprise a respective transistor, a respective main current path of which is connected between the first supply terminal and the CMOS gate and between the first supply terminal and the resistance element, respectively, the control means comprising an operational amplifier having an output which is connected to control electrodes of the transistors, an inverting input thereof being connected between the first current source and the CMOS gate whilst a non-inverting input thereof is connected between the second current source and the resistance element. As is known, a feedback operational amplifier controls its input voltages so that they remain equal. A further embodiment of an oscillator circuit in accordance with the invention is characterised in that the current sources together comprise a current mirror having a first and a second transistor of a first conductivity type, a respective main current path thereof being included in the first and the second current branch, respectively, the control means comprising a third transistor of a second conductivity type, a main current path of which is included in the second current branch between the resistance element and the second transistor, in the first current branch there also being included a main current path of a fourth transistor of the second conductivity type between the first transistor and the CMOS gate, control electrodes of the first and the second transistor being connected to one another and to a junction of the second and the third transistor, control electrodes of the third and the fourth transistor being connected to one another and to a junction of the first and the fourth transistor. A voltage variation across the CMOS gate thus results in a current variation through the third transistor, which current variation is fed back to the current mirror as a control voltage variation. The fourth transistor then acts as a voltage level shifter for an amount of one threshold voltage. This is a simple method of realizing frequency stabilization means. A further embodiment of an oscillator circuit in accordance with the invention is characterized in that the first, the second, the third and the fourth transistor are of a bipolar type. Because the current control voltage characteristic of a bipolar transistor is steeper than that of a MOS transistor, a finer adjustment is obtained than if the first to the fourth transistor were of the field-effect type. Moreover, field-effect transistors are more susceptible to 1/f noise than bipolar transistors, so that in the case of frequency stabilization means realized by means of bipolar transistors the effect of 1/f noise on the oscillator is less than in the case of frequency stabilization means realized by means of field-effect transistors. A further embodiment of an oscillator circuit in accordance with the invention is characterized in that the basis of the first and the second transistor are connected to the junction of the second and the third transistor, via a base-emitter path of a fifth transistor of the first conductivity type, a collector terminal of which is connected to the second supply terminal. The fifth transistor drains the base currents of the first and the second transistor, because these base currents would otherwise disturb the ratio of the currents in the first and the second current branch, notably if the first and the second transistor have a low current gain factor such as pnp transistors.The draining of the base currents reduces the effect of the temperature-dependent current gain factor on the ratio of the currents in the first and the second current branch. The improved current ratio becomes manifest as a more stable frequency. A further embodiment of an oscillator circuit in accordance with the invention is characterized in that the supply terminals of a second CMOS gate, having substantially the same d.c. behaviour as the CMOS gate, referred to hereinafter as the first CMOS gate, are connected in parallel across the resistance element in order to compensate for leakage currents in the first CMOS gate, an input terminal of the second CMOS gate being connected to an input terminal of the first CMOS gate. The second CMOS gate compensates for leakage currents in the second current branch which occur when the first CMOS gate in the oscillator is switched. Preferably, the output of the second CMOS gate carries a capacitive load which is negligibly small with respect to the capacitive load of the first CMOS gate. Thus, it is avoided that, in addition to the leakage current due to the d.c. behaviour of the second CMOS gate, the charging current for the capacitive load on the output of the second CMOS gate also has an effect on the adjustment. A further embodiment of an oscillator in accordance with the invention is characterized in that the resistance is adjustable. Then, the frequency is adjusted by adjustment of the resistance. The invention will be described in detail hereinafter with reference to a drawing; therein Fig. 1 shows a first embodiment of an oscillator circuit in accordance with the invention, Fig. 2 shows a second embodiment of an oscillator circuit in accordance with the invention, Fig. 3 shows an extension of the oscillator circuit shown in Fig. 2, and Fig. 4 shows a further extension of the oscillator circuit shown in Fig. 3. Fig. 1 shows an oscillator circuit I in which the CMOS oscillator OSC is connected in series with a main current path of a transistor 10 between supply terminals V DD and V SS , thus forming a first current branch I-1 . A second current branch I-2 comprises a main current path of a transistor 11 in series with a resistance R₁. The control means are formed by an operational amplifier 12. The output of the amplifier 12 is connected to the control electrodes of the transistors 10 and 11 which form controlled current sources. The non-inverting input of the amplifier 12 is connected to the junction of the transistor 11 and the resistance R₁, its inverting input being connected to the junction of the oscillator OSC and the transistor 10. For the sake of simplicity it is assumed that the transistors 10 and 11 are identical, like the current adjustment resistances 13 and 14. Because a feedback operational amplifier 12 keeps the difference between its input voltages V₁ and V₂ equal to zero and because the currents in the two branches I-1 and I-2 are equal, it is achieved that the ratio of the voltage across and the current through the CMOS oscillator OSC is equal to the value of the resistance R₁. The capacitor C serves for smoothing ripples in the supply voltage V₂ for the oscillator These ripples are caused by the intermittent drawing of current by the oscillator OSC . Fig. 2 shows an oscillator circuit II in which the CMOS oscillator OSC is connected between two supply terminals V DD and V SS in series with main current paths of transistors 20 and 23, thus forming a first current branch II-1 . A second current branch II-2 is formed by the series connection of the main current paths of transistors 21 and 22 and resistance R between V DD and V SS . The transistors 20 and 21 form a first and a second current source in a current mirror arrangement. The control means comprise the transistor 22. The transistor 23 is connected as a diode and serves as a level shifter. For the sake of simplicity it is assumed that the transistors 20 and 21 are of the same size, like the transistors 22 and 23. In the case of equilibrium, no charge accumulation will occur anywhere and both current branches II-1 and II-2 will conduct substantially the same current. Because the transistors 22 and 23 conduct substantially the same current with an approximately equal control voltage, their respective emitter voltages V₂₁ ands V₂₂ are substantially identical. The ratio of V₂₂ and the current conducted by the oscillator OSC then equals the value of the resistance R. When the current consumed by the oscillator OSC decreases due to a temperature variation, in first instance charge will be accumulated on the terminal V₂₂, with the result that the emitter voltage of the transistor 23 increases. This results in pinching of the transistor 23 so that the current from the transistor 20 causes accumulation of charge on the control electrodes of the transistors 22 and 23. As a result, the control voltage for the transistor 22 as well as the transistor 23 increases. Consequently, the transistor 23 will draw more current, resulting in an increased control voltage for the transistors 20 and 21. The transistors 20 and 21 are then turned on further. The current adjustment will continue to change until charge accumulation no longer occurs anywhere. The ratio of V₂₂ and the current consumed by the oscillator OSC is then identical again to the value of the resistance R. Because this ratio occurs in the previously described expression for the oscillation frequency f, the oscillation frequency is now a function of the value of the resistance R. By variation of R, represented in Fig. 2 by a variably resistance, the frequency is also varied. If desired, the current adjustment resistances 213 and 214 can be included, and also a capacitor C for smoothing ripples in V₂₂. Fig. 3 shows a further embodiment of an oscillator circuit III in accordance with the invention. Because this embodiment is an elaboration of the circuit II of Fig. 2, corresponding components are denoted by corresponding reference numerals. In comparison with the circuit shown in Fig. 2, a transistor 31 has been added. This transistor substantially drains the base currents of the transistors 20 and 21. Because the current gain factor is small for pnp transistors, the base currents of the transistors 20 and 21 in Fig. 2 would cause an undesirably great unbalance in the currents of the first and the second current branch. The second current branch would have to drain the base currents of the transistors 20 and 21 to V SS . The ratio of the currents in the current branches then becomes a function of the current gain factor of the pnp transistors 20 and 21, and hence is also temperature-dependent. The transistor 31 drains the base currents of the transistors 20 and 21 and eliminates this problem. A similar arrangement with an additional transistor for the transistor pair 22/23 is feasible, but generally not necessary because the current gain factor of a npn transistor is greater than that of a pnp transistor. Fig. 4 shows an embodiment of an oscillator circuit IV in accordance with the invention which is an elaboration of the circuit shown in Fig. 3. Corresponding components are denoted by corresponding reference numerals. Unlike the circuit shown in Fig. 3, the circuit shown in Fig. 4 comprises a sub-circuit P which is connected parallel to the resistance R. The sub-circuit P comprises substantially the same CMOS gates as the oscillator OSC and switches in synchronism with the oscillator OSC . When a CMOS gate is switched, a leakage current will briefly appear. The magnitude of this leakage current is related to the temperature-dependent threshold voltages of the various transistors in the CMOS gate. Thus, the current consumed by the oscillator OSC contains a first contribution in the form of a charge current for the capacitances on the outputs of the CMOS gates and a second contribution in the form of a leakage current occurring when a CMOS gate is switched. The second contribution is generally small in comparison with the first contribution. The ratio of the first current contribution and the voltage across the oscillator OSC determines the frequency. In order to fix this ratio by means of the resistance R and to ensure that it is not disturbed by the leakage currents in the oscillator OSC , the sub-circuit is connected parallel to the resistance R in the second current branch. In that case only the charge current will flow through the resistance R ; the leakage current will flow through the sub-circuit P. Thus, the frequency is compensated for temperature-dependent variations of the threshold voltages.

Claims: An oscillator circuit, comprising an oscillator with a CMOS gate and frequency stabilisation means having a controllable power supply circuit for powering the CMOS gate and a reference circuit for generating the output voltage of the power supply circuit to obtain a stabilised oscillation frequency, characterised in that the reference circuit comprises as a reference element a substantially temperature-independent linear resistance element and means for applying to the CMOS gate a voltage and a current, the ratio between said voltage and current being proportional to the ratio between a voltage and a current across said resistance element. An oscillator circuit as claimed in Claim 1, characterized in that the reference circuit comprises means for generating a reference voltage and current across and through the substantially temperature-independent linear resistance element and in that the frequency stabilisation means comprise a control circuit, a first and a second measuring input of said control circuit being connected to an output of the controllable power supply circuit, respectively, for the measurement of either a voltage present across the CMOS gate or a current applied to the CMOS gate, and for the measurement of either the reference voltage or the reference current, respectively, in order to control the controllable power supply circuit in dependence of a ratio of the measured quantities, the frequency stabilization means fixing a ratio of said quantities other than the measured quantities. An oscillator circuit as claimed in Claim 2, characterized in that the frequency stabilization means comprise a first current branch and a second current branch which are connected to a first supply terminal and which comprise a first and a second controllable current source, respectively, for powering the CMOS gate which is connected to a second supply terminal and a linear resistance element which is connected to the second supply terminal, respectively, the ratio of the currents supplied by the current sources being substantially constant, and also comprise control means which are connected between the CMOS gate and the resistance element on the one side and the current sources on the other side, which control means control the current sources so that the ratio of the voltage across the CMOS gate and a voltage present across the resistance element is constant. An oscillator circuit as claimed in Claim 3, characterized in that the first and the second current source comprise a respective transistor, a respective main current path of which is connected between the first supply terminal and the CMOS gate and between the first supply terminal and the resistance element, respectively, the control means comprising an operational amplifier, having an output which is connected to control electrodes of the transistors, an inverting input thereof being connected between the first current source and the CMOS gate whilst a non-inverting input thereof is connected between the second current source and the resistance element. An oscillator circuit as claimed in Claim 3, characterized in that the first and the second current source comprise a respective transistor of a first conductivity type, a respective main current path of which is connected between the first supply terminal and the CMOS gate and between the first supply terminal and the resistance element, respectively, the control means comprising a further transistor of a second conductivity type and an operational amplifier, a main current path of the further transistor being included in the second current branch between the second current source and the resistance element, a non-inverting input of the operational amplifier being connected between the first current source and the CMOS gate, an inverting input thereof being connected between the further transistor and the resistance element whilst an output thereof is connected to a control electrode of the further transistor. An oscillator circuit as claimed in Claim 3, characterized in that the current sources together comprise a current mirror having a first and a second transistor of a first conductivity type, a respective main current path thereof being included in the first and the second current branch, respectively, the control means comprising a third transistor of a second conductivity type, a main current path of which is included in the second current branch between the resistance element and the second transistor, in the first current branch there also being included a main current path of a fourth transistor of the second conductivity type between the first transistor and the CMOS gate, control electrodes of the first and the second transistor being connected to one another and to a junction of the second and the third transistor, control electrodes of the third and the fourth transistor being connected to one another and to a junction of the first and the fourth transistor. An oscillator circuit as claimed in Claim 6, characterized in that the first, the second, the third and the fourth transistor are of a bipolar type. An oscillator circuit as claimed in Claim 7, characterized in that the bases of the first and the second transistor are connected to the junction of the second and the third transistor, via a base-emitter path of a fifth transistor of the first conductivity type, a collector terminal of which is connected to the second supply terminal. An oscillator circuit as claimed in Claim 7 or 8, characterized in that the bases of the third and the fourth transistor are connected to the junction of the first and the fourth transistor via a base-emitter path of a sixth transistor of the second conductivity type, a collector terminal of which is connected to the first supply terminal. An oscillator circuit as claimed in any one of the preceding Claims, characterized in that the supply terminals of a second CMOS gate, having substantially the same d.c. behaviour as the CMOS gate, referred to hereinafter as the first CMOS gate, are connected in parallel across the substantially temperature-independent linear resistance element in order to compensate for leakage currents in the first CMOS gate, an input terminal of the second CMOS gate being connected to an input terminal fo the first CMOS gate. An oscillator circuit as claimed in any one of the preceding Claims, characterized in that the substantially temperature-independent linear resistance element is adjustable. An oscillator circuit as claimed in any one of the preceding Claims, characterized in that a capacitance is connected parallel across the CMOS gate.

Inventors: BOUDEWIJNS, ARNOLDUS JOHANNES JULIANA
Applicants: N.V. PHILIPS' GLOEILAMPENFABRIEKEN
Application year: 1988
Main classification: H03L1
IPC codes: H03K3, H03L1