Basic cell of gate array device

Abstract: A basic cell of a gate array device comprises a substrate (40), a plurality of source/drain diffusion regions (58a - 58c; 60a - 60c) being formed in the substrate, at least one gate electrode (26, 28) being located between the adjacent source/drain diffusion regions, a substrate contact region (62, 64) being formed in the substrate and being located in the vicinity of the source/drain diffusion regions, and an insulating film (20) being provided on the source/drain regions and the gate electrode and being provided with contact hole forming regions (30s, 30s₁) at which contact holes are to be formed so as to form a plurality of interconnecting channels (32₁ - 32₄) for making an electric connection between desired regions. Each of the source/drain diffusion regions adjacent to the substrate contact region has a narrower portion (d p ) located under one interconnecting channel specifically for making a substrate contact and a wider portion (d) located under the other interconnecting channels.

Description: BACKGROUND OF THE INVENTION The present invention generally relates to basic cells of gate array devices, and in particular to improvements in a relationship between source/drain diffusion regions and electrode contact holes formed in insulating films formed on the diffusion regions. A gate array device is an integrated circuit device formed on a a semiconductor chip on which a plurality of basic cells which are formed by a production process common to all gate array devices, are arranged in the form of matrix. Each basic cell is configured by transistors, diodes, resistors and so on. An interconnecting (or wiring) process is carried out for the basic cells to build desired logic elements and circuits in accordance with designers specifications. Most conventional gate array devices are configured by complementary metal oxide semiconductor (hereafter simply referred to as CMOS) transistors. The gate array device of this type is known as a CMOS gate array device. Each of the basic cells contains an n-channel element region and a p-channel element region. For example, the n-channel element region has a p-type well region formed in an n-type silicon substrate. In the p-type well region, there are formed n⁺-type diffusion regions which are source/drain (hereafter simply referred to as S/D) regions. The n⁺-type diffusion regions related to one basic cell are located between adjacent p⁺-type substrate contact regions formed in the p-type well region. One or more gate electrodes are arranged on a gate insulating film and between the adjacent S/D diffusion regions. On the other hand, p⁺-type diffusion regions related to one basic cell are formed in the n-type silicon substrate, and are located between adjacent n⁺-type substrate contact regions formed in the n-type substrate. The gate electrodes are provided on the gate insulating film and between the adjacent S/D diffusion regions. The S/D regions and the substrate contact regions may be coupled with each other to form desired elements such as CMOS inverters and to make a substrate contact for coupling the S/D regions with the substrate. Conventionally, a plurality of interconnecting (wiring) channels on which interconnecting lines are arranged, are provided for each basic cell. These interconnecting channels extend in a direction of a column composed of basic cells. Actually, the interconnecting lines are laid on an insulating film deposited on the S/D diffusion regions and the gate electrodes. The interconnecting lines mutually connect the S/D regions and substrate contact regions through contact holes formed in the insulating film deposited thereon. The contact holes are filled with material forming the interconnecting lines. The contact holes are formed at predetermined positions on the S/D regions and the substrate contact regions. However, the conventional basic cells of the gate array device of the above structure has the following disadvantages. As is known, it is very difficult to accurately form the contact holes at predetermined positions. In other words, it is frequently observed that the contact holes are formed in a state where they deviate from the predetermined positions. For example, when contact holes for making the electric contact with the S/D diffusion regions adjacent to the substrate contact regions are formed partially beyond the S/D diffusion regions, a surface portion of the substrate becomes exposed through the contact holes. In this case, when an interconnecting line which is not designed to be coupled with the substrate contact region is provided over the above contact holes, a short circuit occurs between the exposed substrate surface portion and the above S/D diffusion region via the interconnecting line. This problem becomes greater as the integration density increases. In order to prevent the short circuit, a compensated impurity diffusing process must be carried out for the exposed surface portion of the substrate. However, the compensated impurity diffusing process is complex and cumbersome, and takes a long time, because it consists of steps for masking, ion implantation, removal of the resist film, and annealing. In addition, the conventional basic cell is designed so that the substrate contact can be built by using any one of the plurality of interconnecting channels. For this purpose, the substrate contact regions are formed so as to have the width sufficient to form contact holes at any positions thereof. This prevents an increased integration density from being obtained. For example, EP-A-0 136 880 discloses a gate array type semiconductor device including a plurality of basic cells arranged in an array and diffusion regions for suppressing latchup between the basic cells in the array. The semiconductor device has each of the diffusion regions formed as a comb-shaped structure. The teeth of the structures extend between the basic cells in each column and occupy less space than the conventional diffusion regions since ohmic contacts are no longer required between every pair of adjacent basic cells. The comb-shaped diffusion regions partially enclose each basic cell. SUMMARY OF THE INVENTION Accordingly, a general object of the present invention is to provide a novel and useful basic cell of a gate array device in which the disadvantages of the conventional basic cell have been eliminated. A more specific object of the present invention is to provide a basic cell of a gate array device in which the compensated impurity diffusing process is unnecessary even if the positional displacement of contact holes occurs. Another object of the present invention is to provide a basic cell of a gate array device in which the integration density can be improved. The above objects of the present invention can be achieved by the features of claim 1. Other objects, features and advantages of the present invention will become apparent from the following detailed description when read in conjunction with the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS FIG.1 is a plan view of a semiconductor chip of a gate array device; FIG.2 is an enlarged plan view of conventional basic cells employed in a conventional gate array device; FIG.3A is an enlarged plan view of an n-channel element region of the basic cells shown in FIG.2; FIG.3B is an elevational cross sectional view taken along a line III B -III B shown in FIG.3A, in which the positional displacement of a contact hole does not occur; FIG.3C is an elevational cross sectional view taken along a line III B -III B shown in FIG.3A, in which the positional displacement of the contact hole occurs; FIG.4A is an enlarged plan view of an n-channel element region of the basic cells shown in FIG.2, in which interconnecting lines different from those shown in FIG.2 are provided; FIG.4B is an elevational cross sectional view taken along a line IV B -IV B shown in FIG.4A; FIG.5 is a plan view of a preferred embodiment of a basic cell of a gate array device according to the present invention; FIG.6A is an enlarged plan view of an n-channel element region of the basic cell shown in FIG.5; FIG.6B is an elevational cross sectional view taken along a line VI B -VI B shown in FIG.6A; FIG.7A is a plan view of the preferred embodiment of the basic cell shown in FIG.5, in which interconnecting lines which are different from those shown in FIG.5 are provided; FIG.7B is an elevational cross sectional view taken along a line VII B -VII B shown in FIG.7A.; and FIGS.8A and 8B are elevational cross sectional views of n-channel and p-channel element regions which may be used in the present invention. DETAILED DESCRIPTION Referring to FIG.1, a plurality of bonding pads 10 are arranged in the peripheral region of a semiconductor chip 100 of a gate array device. A plurality of input/output cells (hereafter simply referred to as I/O cells) 12 are arranged in the peripheral region of the chip 100 and inside the arrangement of the bonding pads 10. A plurality of basic cell columns 14₁, 14₂, ..., 14 m are arrayed in an inner surface area of the chip 100 surrounded by the arrangement of the I/O cells 12. Each of the basic cell columns 14₁, 14₂, ..., 14 m consists of a number of basic cells 16₁, 16₂, 16₃, ..., 16 n . The interconnecting (wiring) process has not yet been performed on the semiconductor chip 100 depicted in FIG.1. The interconnecting process is carried out in accordance with specifications by individual users or designers. Spacings 15 between the adjacent basic cell columns are used to arrange buses carrying various signals. FIG.2 illustrates only two conventional basic cells 16₂ and 16₃ out of the basic cells 16₁ through 16 m shown in FIG.1. The two basic cells 16₂ and 16₃ are adjacent to each other in a direction of the column 14₁. As illustrated, each of the basic cells comprises an n-channel element region 17n and a p-channel element region 17p. Two n-channel transistors can be formed in the n-channel element region 17n. Likewise, two p-channel transistors can be formed in the p-channel element region 17p. Adjacent n-channel element regions 17n are separated from each other by one p⁺-type well contact region 18a. Similarly, adjacent p-channel element regions 17p are separated from each other by one n⁺-type substrate contact region 18b. Hereafter, each of the p⁺-type well contact regions 18a and the n⁺-channel substrate contact regions 18b is referred to as a substrate contact region. The substrate contact regions 18a are mutually coupled as shown in FIG.2 so that one substrate contact region of a comb shape made of the p⁺-type well contact region is formed. Likewise, the substrate contact regions 18b are mutually coupled, so that one substrate contact region of a comb shape made of the n⁺-type contact region is formed. The substrate contact regions 18a and 18b oppose each other. Three source/drain (hereafter simply referred to as S/D) diffusion regions 22a, 22b and 22c are provided between the adjacent substrate contact regions 18a. The S/D diffusion regions 22a and 22c are separated from the substrate contact regions 18a by a field oxide film 20. In addition, the S/D diffusion regions 22a, 22b and 22c are separated from each other by a predetermined distance. The substrate contact regions 18a and the S/D diffusion regions 22a, 22b and 22c are formed in a p-type well region 34 (shown in FIG.3B) which is formed in an n-type silicon substrate 40. Similarly, three S/D diffusion regions 24a, 24b and 24c are provided between the adjacent substrate contact regions 18b. The substrate contact regions 18b and the S/D diffusion regions 24a, 24b and 24c are formed in the n-type silicon substrate 40. A gate electrode 26 is provided on a gate insulating film 44 (shown in FIG.3B) and between the adjacent S/D diffusion regions 22a and 22b formed in the n-channel element region 17n as well as between the adjacent S/D diffusion regions 24a and 24b formed in the p-channel element region 17p. Another gate electrode 28 is provided on the gate insulating film 44 and between the adjacent S/D diffusion regions 22b and 22c formed in the n-channel element region 17n as well as between the adjacent S/D diffusion regions 24b and 24c formed in the p-channel region 17p. An insulating film composed of insulating films 46 and 48 (shown in FIG.3B), is deposited on the substrate contact regions 18a and 18b, the S/D diffusion regions 22a to 22c and 24a to 24c, and the gate electrodes 26 and 28. A plurality of contact hole forming regions 30s are predetermined at portions of the insulating film composed of the laminated insulating films 46 and 48 at which contact holes are to be formed. The contact hole forming regions 30s are positioned so as to form four interconnecting channels 32₁ through 32₄, which extend in the direction of the basic column 14₁. One or more interconnecting lines can be deposited on any of the interconnecting channels 32₁ to 32₄, which are electrically coupled with the desired regions such as the S/D diffusion regions through contact holes formed at the positions 30s. Additionally, an interconnecting line which is specifically used to connect one or more predetermined S/D diffusion regions to the substrate contact regions 18a and 18b, is provided by use of any one of the four interconnecting channels 32₁ to 32₄. Therefore, the substrate contact regions 18a and 18b are made uniformly wide enough to form the contact holes at the contact hole forming regions 30s within a tolerance for positional displacement of the contact holes. For example, each of the contact hole forming regions 30s has a size of approximately 2 (µm) x 2 (µm), and each of the substrate contact regions 18a and 18b is approximately 4 (µm) in width. FIG.3A shows an example of an interconnecting pattern which may be provided for the n-channel element region 17n. In the illustrated example, the S/D diffusion regions 22a and 22c adjacent to the substrate contact regions 18a are utilized as drain regions. An aluminum (Al) interconnecting line 36 for making the substrate contact is provided on the second interconnecting channel 32₂. The interconnecting line 36 for the substrate contact is electrically connected to the substrate contact regions 18a through contact holes 30a and 30c and to the S/D diffusion region 22b through a contact hole 30b. In this example, the S/D diffusion region 22b is used as a source region. The contact holes 30a to 30b are formed by the window forming process. Another Al interconnecting line 38 for connecting the drain regions 22a and 22c to a desired region or regions is provided on the third interconnecting channel 32₃. The interconnecting line 38 is electrically connected to the drain regions 22a and 22c through contact holes 30d and 30e. FIG.3B shows an elevational cross section taken along a line III B -III B shown in FIG.3A. FIG.3B refers to a case where the positional displacement of contact holes with respect to the predetermined positions does not occur. The p-type well region 34 is formed in the n-type silicon substrate 40 by the diffusion process. As described before, most of the available gate array devices are CMOS gate array devices. In the CMOS gate array devices, n-channel MOS transistors are formed in the p-type well region 34, and p-channel MOS transistors are formed in the surface portion of the n-type substrate 40. The n-channel and p-channel MOS transistors may be coupled with each other to form CMOS transistors. In the example shown in FIG.2, each of the basic cells 16₂ and 16₃ can provide two CMOS transistors. A surface portion of the n-type silicon substrate 40 on which the gate electrode 26 is to be formed is subjected to the heat treatment process, so that the gate insulating film 44 made of silicon dioxide (SiO₂) for example is formed. The gate electrode 26 made of polysilicon for example, is provided on the gate insulating film 44. The n-type ion implanting and diffusing process is carried out for the p-type well region 34 in accordance with the self-alignment in which the gate electrode 26 functions as the mask. By this process, the S/D diffusion regions 22a to 22c are formed. Subsequently, the substrate contact regions 18a which are the p⁺-type diffusion regions are formed by the p-type ion implanting and diffusing process. Thereafter, the surface of the gate electrode 26, surface portions of each of the S/D diffusion regions 22a to 22c, and the substrate contact regions 18a are coated by the insulating film 46 made of SiO₂ for example. Subsequently, the insulating film 48 made of phospho-silicate glass (hereafter simply referred to as PSG) for example, is provided on an entire surface of the structure. Following the deposition of the PSG film 48, the contact holes 30a to 30e are formed in the laminated insulating films 46 and 48 on the S/D diffusion regions 22a, 22b and 22c and the substrate contact regions 18a by the window opening process. Subsequently, aluminum is deposited and patterned. As a result, the Al connecting line 36 on the second channel 32₂ is formed on the insulating film 48 so as to cover the contact holes 30a, 30b and 30c. Likewise, the Al interconnecting line 38 on the third channel is formed on the insulating film 48 so as to the cover the contact holes 30d and 30e. At the time of its use, a reference potential of 0 (v) for example is applied to the substrate contact regions 18a and the source region 22b, whereas a positive potential of 5 (v) for example is applied to the drain regions 22a and 22c. In this use, no serious problem occurs in the case where the window opening for forming the contact holes has been accurately carried out and the contact holes 30d and 30e are positioned within the drain regions 22a and 22c, respectively. On the other hand, a problem of the short circuit occurs between the drain regions 22a and 22c and the p-type well region 34, in the case where any one of the contact holes 30d and 30e is positioned partially beyond the respective drain regions 22a and 22c. The above problem is now described in detail, by referring to FIG.3C which shows an elevational cross sectional view taken along the line III B -III B shown in FIG.3A. FIG.3C shows the same configuration as that shown in FIG.3B except for the position of the contact hole 30d. In general, as shown in FIG.2, a distance d₀ is provided between the edges of the contact hole forming regions 30s in the S/D diffusion region 22a adjacent to the substrate contact region 18a and the edge of the S/D diffusion region 22a. The distance d₀ decreases with an increase in the integration density of the gate array. As shown in FIG.3C, when the positional displacement of the contact hole 30d over the distance d₀ occurs, a surface portion 50 on the p-type well region 34 may become exposed. Therefore, the exposed well surface portion 50 is brought into contact with the interconnecting line 38. As a result, the short circuit is caused between the drain regions 22a and 22c and the p-type well region 34 via the interconnecting line 38. This short circuit may cause an erroneous operation of the circuit configured by the basic cells. In order to prevent the occurrence of the short circuit due to the positional displacement of the contact holes, the compensated impurity diffusing process is employed. Impurities of the n-type are implanted through the exposed surface portion 50 and are diffused into the p-type well region 34. A reference numeral 52 denotes the compensated n⁺-type diffusion region. However, as described previously, the compensated impurity implanting and diffusing process is complex and cumbersome. With regard to the interconnecting line 36 for making the substrate contact, the problem of the short circuit does not arise, because the S/D diffusion regions 22a and 22c adjacent to the substrate contact regions 18a are not designed to be provided with any contact holes. FIG.4A shows a different interconnecting pattern in which the S/D diffusion regions 22a and 22c are used as the source regions, and the S/D diffusion region 22b is used as the drain region. As shown, an Al interconnecting line 54 for making the substrate contact is provided on the second interconnecting channel 32₂ shown in FIG.2. The interconnecting line 54 is electrically connected to the substrate contact regions 18a through the contact holes 30a and 30c. In the illustrated structure, the source region 22a is designed to be set to a potential identical to that of the p-type substrate contact regions 18a. For this reason, the contact holes 30a and 30c are formed at the contact hole forming regions 30s located under the second interconnecting line 32₂. The interconnecting line 54 for making the substrate contact connects the source region 22a to the substrate contact regions 18a through the contact hole 30b. The other source region 22c is designed to be used at a potential different from that of the p-type well region 34. For this reason, the source region 22c is not coupled with the interconnecting line 54 and is coupled with another interconnecting line 56a through the contact holes 30d and 30e. As illustrated, still another interconnecting line 56b is extended from the drain region 22b connected thereto through a contact hole 30f. An elevational cross sectional view taken along a line IV B -IV B shown in FIG.4A is shown in FIG.4B. The illustrated structure has the contact hole 30b having the positional displacement beyond the source region 22a. An exposed well region 51 is formed due to the displacement of the contact hole 30b. However, it is noted that no problem arises in the structure shown in FIGS.4A and 4B, because the substrate contact region 18a and the source region 22a are connected to each other by the interconnecting line 54, so that they are at the same potential. Consequently, the S/D diffusion regions 22a and 22c which are adjacent to the substrate contact regions 18a, are provided with the contact holes under the interconnecting channel for the substrate contact, only when they are used as the source regions as in the case of FIG.4A. In other words, when the S/D regions 22a and 22c adjacent to the substrate contact regions 18a are used as the drain regions as in the case shown in FIG.3A, contact holes are not formed under the interconnecting channel for the substrate contact. The above description refers to the n-channel element region 17n. It is noted that a problem like the above holds true for the p-channel element region 17p. A description is now given of a preferred embodiment of the present invention. FIG.5 is a plan view of basic cells of a gate array device according to a preferred embodiment of the present invention. FIG.5 shows two basic cells 90₁ and 90₂. A plurality of basic cells each having the structure shown in FIG.5 are formed on the semiconductor chip 100 of FIG.1 instead of the basic cells 16₁, 16₂, ..., 16 n . Structural elements shown in FIG.5 which are the same as those in the previous figures are represented by the same reference numerals. Structural differences between the configurations shown in FIGS.2 and 5 can be summerized as follows. On an n-channel side I, firstly, contact hole forming regions 30s₁ located on substrate contact regions 62 are provided under only the second interconnection channel 32₂. Secondly, the substrate contact regions 62 are made narrower at their portions other than a portion thereof under the second interconnecting channel 32₂ under which the contact hole forming regions 30s₁ are provided. In other words, each of the substrate contact regions 62 has a wider portion and narrower portions. Thirdly, a distance d between edges of S/D regions 58a and 58c and edges of the contact hole forming regions 30s under interconnecting channels other than the second interconnecting channel 32₂ only for the substrate contact is made wider than a distance d p between edges of the contact hole forming regions 30s and edges of the S/D regions 58a and 58c under the second interconnecting channel 32₂. In other words, the S/D diffusion regions 58a and 58c adjacent to the substrate contact regions 62 have wider portions and narrower portions. A p-channel side II having a substrate contact region 64 has features identical to those of the n-channel side I. A further description is now given of the preferred embodiment of the present invention, by referring to FIGS.5, 6A and 6B. The illustrated basic cell 90₁ comprises a n-channel element region 42n and a p-channel element region 42p. Two adjacent n-channel element regions 42n are separated from each other by one substrate contact region 62 made of a p⁺-type diffusion region formed in the p-type well region 34. Two adjacent p-type element regions 42p are separated from each other by one substrate contact region 64 made of an n⁺-type diffusion region formed in the n-type substrate 40. Openings of the substrate contact regions 62 and 64 oppose each other. The substrate contact regions 62 are mutually connected by a p⁺-type diffusion region extending in the direction of the column so that one substrate contact region of a comb shape is formed. similarly, the substrate contact region 64 are mutually connected by an n⁺-type diffusion region extending in the direction of the column so that one substrate contact region of a comb shape is formed. S/D diffusion regions 58a, 58b and 58c are provided between the adjacent substrate contact regions 62. The S/D diffusion regions 58a, 58b and 58c are formed by n⁺-type diffusion regions which are formed in the p-type well region 34. Adjacent S/D diffusion regions 58a, 58b and 58c are separated from each other by a predetermined distance. The substrate contact regions 62 and the S/D diffusion contact regions 58a and 58c adjacent thereto are separated from each other by the field insulating film 20. The gate electrode 26 is provided on the gate insulating film 44 and between the S/D diffusion regions 58a and 58b. Similarly, the gate electrode 28 is provided on the gate insulating film 44 and between the S/D diffusion regions 58b and 58c. The insulating film 46 made of SiO₂ for example, is formed on the surface of the gate electrodes 26 and 28, the surfaces of the S/D diffusion regions 58a, 58b and 58c and the substrate contact regions 62. The insulating film 48 is provided on the SiO₂ film 46 and the field oxide film 20. The contact hole forming regions 30s at which the contact holes are to be formed in the insulating film consisting of the laminated insulating films 46 and 48 are predetermined on the S/D diffusion regions 58a to 58c. S/D diffusion regions 60a, 60b and 60c in the p-channel element region 42p are provided between the adjacent substrate contact regions 64. These S/D diffusion regions are separated from each other by a predetermined distance. The S/D diffusion regions 60a and 60c are separated from the substrate contact regions 64 by the field oxide film 20. The S/D diffusion regions 60a to 60c are made by p⁺-type diffusion regions formed in the n-type substrate 40. The gate electrode 26 is provided on the gate insulating film 44 and between the adjacent S/D diffusion regions 60a and 60b. Similarly, the gate electrode 28 is provided on the gate insulating film 44 and between the adjacent S/D diffusion regions 60b and 60c. The SiO₂ insulating film 46 is provided on the surface of the gate electrodes 26 and 28, the surfaces of the S/D diffusion regions 60a to 60c and the substrate contact region 64. Further, the insulating film 48 is provided on the insulating film 46 and the field oxide film 40. The regions 30s at which the contact holes are to be formed in the laminated insulating films 46 and 48 are predetermined on the S/D diffusion regions 60a to 60c. A process for producing the gate array device of the present embodiment may be the same as the process for the conventional device described before. As illustrated in FIG.6A, each of the substrate contact regions 62 has narrower portions 62b of a width w₂ and wider portions 62a of a width w₃. As described before, the contact hole forming regions on the substrate contact regions 62 are provided under only the second interconnecting channel 32. That is, one substrate contact region 62 is provided with a single contact hole forming region 30s₁ at the portion 62a which is used for the substrate contact. Therefore, the width w₃ of the portion 62a is almost the same as the width w₁ of each of the substrate contact regions 18a shown in FIG.2. For example, the width w₃ is approximately 4 (µm) in the case where a 2 (µm) x 2 (µm) rectangular contact hole is to be formed. That is, the portion 62a is provided with a margin of approximately 2 (µm) for permitting the positional displacement of the contact hole which is formed at the contact hole forming region 30s₁ within a predetermined tolerance. The portions 62b are made narrower than the portion 62a, because the portions 62b are not provided with the contact hole forming regions 30s. In other words, the contact holes for the substrate contact are not formed on the portions 62b. The width w₂ of the portion 62a can be set equal to be approximately 1.5 (µm) to 2.0 (µm) in the case where the portions 62b has the width w₃ of approximately 4 (µm). In principle, the width w₂ of the portions 62b may be made narrower without a specific limit. The distance d between the edges of the contact hole forming regions 30s under the interconnecting channels other than the second channel 32₂ and the edges of the S/D diffusion regions 58a and 58c is greater than the distance d₀ shown in FIG.2. This is because the substrate contact region 62 is made narrow at its portions 62b, compared to the conventional diffusion region 18a. A distance t₁ between the edges of the S/D diffusion regions 58a and 58c and the substrate contact region 62 must be determined from the viewpoint of the accuracy (tolerance) of the alignment of mask layers for the substrate contact region 62 and the S/D diffusion regions 58a to 58c. For example, the distance t₁ of approximately 2 (µm) is necessiated. An extended length corresponding to d - d₀ can be set equal to approximately 0.5 (µm) or more. In order to obtain the appropriate value of the distance t₁ under the second interconnecting channel 32₂, the edges of the S/D diffusion regions 58a and 58c are recessed under the channel 32₂. The recessed portions are substantially of a trapezoid shape. Instead, a rectangular or curved configuration of the recessed portions may be used. Hence, the distance d p is smaller than the distance d. That is, portions of the S/D diffusion regions 58a and 58c under the second interconnecting channel 32₂ are narrower than those thereof under the first, third and fourth interconnecting channels 32₁, 32₃ and 32₄. Further, when comparing the distances d p and d with the distance d₀ for the conventional basic cell shown in FIG.2, the following relationship can be obtained: d p < d₀< d The interconnecting channel for the substrate contact is made by only the second interconnecting line 32₂. In this regard, it seems that the degree of flexibility of the design of the interconnecting channel for the substrate contact is less than that for the conventional basic cell. However, it is noted that serious problems in the routing of interconnections would not arise at the time of designing logic circuits, and the limitation on the interconnecting line for the substrate contact would not decrease the practicability. It should be appreciated that the present invention results in advantages which far outweigh the limitation of the interconnecting channels that can be utilized for the substrate contact. In addition, the width of the substrate contact region 62 can be made narrower, and thereby the integration density of the gate array employing the above basic cells can be improved. The p-channel side II has the features identical to those of the n-channel side I described above. As illustrated in FIG.5, the n-channel and p-channel element regions 42n and 42p have a reflection relationship with respect to an imaginary boundary thereof. An example of interconnecting patterns which can be performed on the structure shown in FIG.5 is shown in FIG.6A. In the depicted example, the S/D diffusion regions 58a and 58c adjacent to the substrate contact regions 62 are used as the drain regions, and the S/D diffusion region 58b is used as the source region. An interconnecting line 66 for the substrate contact is arranged on the second interconnecting channel 32₂. The interconnecting line 66 is electrically coupled with the substrate contact regions 62 through contact holes 31a and 31c and with the source region 58b through a contact hole 31b. It is noted that contact holes are not formed in the insulating films 46 and 48 under the second interconnecting channel 32₂ in the drain regions 58a and 58c. Therefore, problems arising from the positional displacement of the contact holes do not occur with respect to the interconnecting line 66 for the substrate contact. Another interconnecting line 68 is provided on the third interconnecting channel 32₃. An elevational cross sectional view of the interconnecting line 68 is shown in FIG.6B. As shown, the width w₂ of the substrate contact region 62 is made narrower, as described before. The decrease in the width w₂ of the substrate contact region 62 makes it possible to extend the S/D diffusion regions 58a and 58c, as described before. The interconnecting line 68 is electrically connected to the drain regions 58a and 58c through contact holes 31d and 31e which are formed in the laminated insulating films 46 and 48. A reference numeral 72 shown in FIG.6B denotes a correct position of the contact hole 31d. When the window opening is carried out accurately, the contact hole 31d is formed at a position specified by the reference numeral 72. The illustrated contact hole 31d is formed in a state where it deviates from the correct position by a distance Δ. It is appreciated that the contact hole 31d is located within the surface of the drain region 58a made of the n⁺-type diffusion region. As a result, the short circuit between the interconnecting line 68 and the p-type well region 34 can be avoided. In addition, the compensated impurity diffusing process is not needed. FIG.7A shows another interconnecting pattern. The illustrated pattern itself is the same as those shown in FIG.4A. Therefore, the S/D diffusion regions 58a and 58c are used as the source regions, and the S/D diffusion region 58b is used as the drain region. An interconnecting line 70 for making the substrate contact is arranged on the second interconnecting channel 32₂. The interconnecting line 70 is electrically connected to the substrate contact regions 62 through the contact holes 31a and 31c and with the source region 58a through the contact hole 31b. The source region 58a is provided with a potential equal to the potential at the substrate contact region 62. The other source region 58c is connected to an interconnecting line 56a, the potential of which is different from that for the source region 58a. Still another interconnecting line 56b is electrically connected to the drain region 58b. FIG.7B is an elevational cross sectional view taken along a lime VII B -VII B shown in FIG.7A. As shown, the contact holes are located partially beyond the source region 58a due to the large positional displacement. However, the problem of the short circuit does not arise because the source region 58a is designed so as to be connected to the substrate contact region 62 by the interconnecting line 70. FIGS.8A shows an elevational cross section of an n-channel element region, and FIG.8B shows an elevational cross section of a p-channel element region. In these figures, insulating film and interconnecting lines are omitted for simplicity. In the above embodiments, a reference numeral 80 corresponds to the p-type well region 34 in the n-type substrate 40, and a reference numeral 82 corresponds to the n-type substrate 40. However, the present invention is not limited to these configurations of the CMOS gate array device. For example, the regions 58a to 58c and 62 of the n-channel element shown in FIG.8A may be formed in a p-thpe substrate, or a p-type well region formed in a p-type substrate. The regions 60a to 60c and 64 of the p-channel element shown in FIG.8B may be formed in an n-type well in an n-type substrate, or an n-type well region in a p-type substrate. The interconnecting channels for making the substrate contact are not limited to the second interconnecting channel 32₂, but the other channels may be utilized. The number of the interconnecting channels is not limited to four, but a different number of the interconnecting channels may be used. The number of the transistors in each of the n-channel and p-channel element regions is not limited to two, and a different number of transistors may be provided.

Claims: A gate array device formed in a semiconductor substrate (40), comprising a plurality of basic cells arranged in a column in a first direction, each of said basic cells comprising a plurality of adjacent source/drain diffusion regions (58a-58c, 60a-60c) separated in said first direction by at least one gate electrode (26, 28), and a substrate contact region (62, 64), said substrate contact region being located between adjacent source/drain diffusion regions of neighbouring basic cells in said column; and an insulating film (46, 48) being provided on said substrate contact region, said source/drain regions and said gate electrode and being provided with contact hole forming regions (30s, 30s₁, 30s₂) adapted for the formation of contact holes for the connection between a plurality of interconnecting wiring channels (32₁ - 32₄) formed on said contact hole forming regions of said insulating layer in said first direction and the device regions beneath said insulating layer, characterized in that : the substrate contact region (62, 64) has a portion (62a) wider in said first direction under the corresponding contact hole region than in the remainder of said substrate contact region; each of the source/drain diffusion regions (58a, 58c; 60a, 60c) has a narrower portion (d p ) in said first direction adjacent to said contact hole region of said substrate contact region (62; 64) than in the remainder of said source/drain diffusion region. A gate array device as claimed in claim 1, characterized in that the distance (d p ) between the edge of the narrower portion of each source/drain diffusion region (58a, 58c; 60a, 60c) adjacent to the substrate contact region (62; 64) and the edge of each contact hole forming region over said source/drain diffusion regions is smaller under the interconnecting wiring channel (32₂) formed above said substrate contact hole forming region (3051) than the corresponding distance (d) under the other interconnecting wiring channels (32₁, 32₃, 32₄). A gate array device as claimed in any of claims 1 to 2, characterized in that an interconnecting line (66; 70) is provided on the interconnecting wiring channel formed above said substrate contact hole forming region (3051) by connecting one or more of the source/drain regions (58b; 58a and 58c) which are used at a potential equal to that of the substrate (40), to the substrate contact region through the contact holes formed in said insulation layer above said substrate contact region and said one or more source/drain regions. A gate array device as claimed in any of claims 1 to 3, characterized in that the source/drain regions (58a, 58c; 60a, 60c) adjacent to the substrate contact region (62, 64) are separated from the substrate contact region by an insulating film (20). A gate array device as claimed in any of claims 1 to 4, characterized in that each basic cell comprises an n-channel element region (42n) and a p-channel element region (42p), and in that each of the n-channel and p-channel element regions comprises a plurality of source/drain diffusion regions (58a - 58c; 60a - 60c), at least one gate electrode (26, 28), a substrate contact region (62, 64) and an insulating film (46, 48) formed on the substrate (40). A gate array device as claimed in claim 5, characterized in that at least one n-channel metal oxide semiconductor transistor is formed in the n-channel element region (42n), and at least one p-channel metal oxide semiconductor transistor is formed in the p-channel element region (42p). A gate array device as claimed in claim 6, characterized in that the source/drain regions (58a - 58c) in the n-channel element region (42n) are n⁺-type diffusion regions formed in a p-type well region (34) formed in an n-type substrate (40), and the substrate contact region (62) in the n-channel element region is a p⁺-type diffusion region (62) formed in said p-type well region (34), and in that the source/drain regions (60a - 60c) in the p-channel element region (42p) are p⁺-type diffusion regions formed in said n-type substrate, and the substrate contact region (64) in said p-channel element region is an n⁺-diffusion region formed in said n-type substrate. A gate array device as claimed in claim 5, characterized in that each of the n-channel and p-channel element regions (42n, 42p) has a plurality of interconnecting wiring channels (32₁ - 32₄), of which one is the interconnecting wiring channel (32₂) for making the substrate contact. A gate array device as claimed in claim 5, characterized in that a plurality of metal oxide transistors are formed in each of the n-channel and p-channel element regions. A gate array device as claimed in claim 5, characterized in that the number of the contact hole forming regions (30s) adapted for the formation of contact holes to each of the source/drain regions (58a - 58c, 60a - 60c) corresponds to the number of the interconnecting wiring channels (32₁ - 32₄).

Inventors: SHIRATO TAKEHIDE, TAZUNOKI TERUO, SHIRATO, TAKEHIDE, TAZUNOKI, TERUO
Applicants: FUJITSU LTD, FUJITSU LIMITED
Application year: 1988
Main classification: H01L27
IPC codes: H01L23, H01L21, H01L27