AN APPARATUS FOR METAL ORGANIC CHEMICAL VAPOR DEPOSITION AND A METHOD USING THE SAME

Abstract: An improved apparatus for growing a compound semiconductor layer by metal organic chemical vapor deposition (MOCVD) is disclosed. Utilizing the apparatus, the semiconductor layer of a uniform thickness and a uniform composition can be grown. The apparatus comprises a plurality of vent pipes (111, 112, 113, 114), which spouts a mixture of source material gases and a dilution gas into a reactor chamber, perpendicular to a substrate surface (2), and comprises a gas supply system in which the gas flow rate through each vent pipe is made to be controllable individually by a flow controlling device (13, 14, 15, 16). Further supplementing a controller operatively connected to the flow controlling devices, an automatic growth of a semiconductor layer of a high quality can be achieved. For cases in which the source material gases are used mutually so reactive as to deposit semiconductor material within the gas supply system, two separate gas supply systems for these two gases are demonstrated to be effective. Another embodiment which enables controlling individually a concentration of the source material gas and the gas flow rate through each vent pipe is also disclosed.

Description: BACKGROUND OF THE INVENTION 1. Field of the Invention This invention relates to an apparatus used for metal organic chemical vapor deposition (hereinafter, abbreviated as MOCVD) and a method using the same. Particularly, this invention concerns the apparatus and the method for growing a compound semiconductor layer on a substrate. This invention has a particular applicability in connection with an apparatus, in which a metal organic gas and a reactive gas therewith are comprised as source material gases and a hydrogen gas is used as a dilution gas. 2. Description of the Related Art An MOCVD method is widely used when a compound semiconductor such as a group III-V or II-VI binary, ternary, or quaternary semiconductor is grown on a semiconductor substrate. In the MOCVD method, a compound gas composed of metal and methyl (or ethyl) group is used as one of source material gases, and is fed to a reactor chamber bubbled with a hydrogen gas. Although the process is sometimes called MOVPE (metal organic vapor phase epitaxy), the word "MOCVD" is used hereinafter in relation to the present invention. A horizontal or vertical type reaction chamber is used in the MOCVD method. In Fig. 1, a typical MOCVD apparatus is schematically shown wherein a vertical type reactor chamber is used. A horizontal type reactor chamber is more suitable than the vertical type when plural wafers are processed at a time. However, when uniformity in the thickness or composition of a grown compound semiconductor layer is important, the vertical type MOCVD apparatus has many advantages. In Fig. 1, a plurality of source material gases and a hydrogen dilution gas are mixed and fed into a reactor chamber 5 through a main valve V m and a vent pipe 1. The vent pipe 1 is sealed to an upper wall portion of the reactor chamber 5 and broadens toward its opening 101. A wafer or a substrate 2 is loaded on a susceptor 8, facing the opening 101 and the susceptor is rotated about a support axis 7 during operation. The vent pipe 1 of a reversed funnel-like shape provides a uniform gas flow onto the surface of the substrate 2. The susceptor 8 is made of carbon material and is heated by a high frequency induction coil 17 in order to raise the substrate temperature to a specified value. Used gas is finally discharged through an opening 6. Source material gases are provided by a plurality of material gas sources 41 to 43 and mixed through valves V₁, V₂ and V₃. In Fig. 1, three source material gas sources are representatively shown. Generally, a hydrogen dilution gas source 40 is provided and the hydrogen [H₂] gas is supplied through a valve V₀ and mixed with source material gases in order to control the gas flow rate and obtain a uniformly mixed gas. Each source material gas is provided in either a tank containing a source material gas or in a bubbler containing a metal organic compound source in a liquid or solid phase which is bubbled by a hydrogen gas. For example, when a ternary semiconductor GaAsP of InGaAs is grown on a binary semiconductor substrate of GaAs or InP respectively, three material gas sources are provided. As an indium gas source, trimethylindium [In(CH₃) ₃] is provided in a bubbler, and as a gallium gas source, trimethylgallium [Ga(CH₃)₃] is provided in a bubbler. As an arsenic or phosphorus gas source, an arsine [ AsH₃] or phosphine [ PH₃] gas is provided in a tank. In order to use these metal organic gas sources, a bubbler containing the metal organic compound is bubbled with a hydrogen gas. The quantity of the metal organic compound output from the bubbler is controlled by the inside temperature of the bubbler and the flow rate of the bubbling hydrogen gas. On the other hand, the arsine or phosphine gas from the tank is also mixed with a hydrogen gas in order to increase a flow velocity in the pipe lines. In growing a III-V group semiconductor layer, the ratio of the V group source material to the III group source material in the mixed gas is maintained at a suitable value in order to obtain a proper growth rate and a proper mixing ratio of the grown mixed semiconductor. These factors change depending on the kinds of the semiconductor layer to be grown. In order to control the growth process easily and obtain a uniform mixture of source material gases, the mixed gas of these source material gases is further diluted with a hydrogen gas from the dilution gas source 40 and thereafter fed to the reactor chamber 5. The most important objective in growing a compound semiconductor layer on a substrate is to obtain a uniform thickness of the grown layer over the entire surface of the substrate and further, when the grown semiconductor is a mixed compound semiconductor to ensure that the mixing ratio thereof is also as uniform as possible on the substrate surface. The latter condition can be expressed in other terms : that the grown semiconductor, for example, In 1-x Ga x As or In 1-x Ga x As y P 1-y has an almost constant x-value or (x, y)-value over the entire substrate surface. However in an application of the MOCVD apparatus shown in Fig. 1, though it has the vent pipe 1 which has the enlarged end opening 101 from which gas is spouted into the reactor chamber in order to provide a more uniform gas flow onto the substrate surface, it is a difficult matter to obtain a uniform thickness of the grown layer over the entire substrate surface as well as a uniform composition thereof. To improve the uniformity of the gas flow, a vent pipe 1 shown in Fig. 2 has been proposed in patent document JP-A-61 242 012. The vent pipe 1 is provided with a plurality of branched pipes 3 at the spouting end thereof. The MOCVD apparatus utilizing the vent pipe such as shown in Fig. 2 is effective to some extent, however, it necessitates a vent pipe 1 having branched pipes 3 of varying diameter and shape. And moreover, when a gas flow rate, a growth temperature, etc. or the kinds of gases are changed, another type of the vent pipe must be provided, which has branched pipes of different diameter in order to obtain uniform growth on the substrate. It is difficult if not practically impossible to change the vent pipe during the growing process in order to obtain a different semiconductor layer. Other improvements for obtaining uniformity of the grown semiconductor layer, especially, with regard to the vertical type MOCVD apparatus are disclosed in the following Japanese Unexamined Patent Publications : JP-A-58 176196 dated October 15, 1983, by A. Takamori etal. JP-A-60 189928 dated September 27, 1985, by Y. Shiotani. The above two disclosures relate to an MOCVD apparatus in which two gas sources are separately introduced into a reactor chamber and spouted from a plurality of distribution nozzles or branched vent pipes and mixed in the vicinity of the substrate. These disclosures have for main objective to avoid a mutual reaction between two source material gases before they are spouted into the reactor chamber. However, there still remain problems concerning the rendering of the gas flow rate, mixing ratio of gases, density of the mixed gas, etc. more uniform. SUMMARY OF THE INVENTION It is a general object of the invention to provide an MOCVD apparatus for growing a compound semiconductor layer on a substrate with a hitherto unobtainable degree of uniformity. It is a more specific object of the invention to provide an MOCVD apparatus for growing a compound semiconductor layer with a superior degree of uniformity in thickness of the grown compound semiconductor layer over an entire surface of the substrate. It is another object of the invention to provide an MOCVD apparatus for growing a compound semiconductor layer with a superior degree of uniformity in composition of the grown compound semiconductor layer over an entire surface of the substrate. It is still another object of the invention to provide a method of growing a semiconductor layer utilizing the above-described MOCVD apparatus for obtaining a superior uniformity in thickness and composition of the grown semiconductor layer. It is further object of the invention to provide the above method of growing a compound semiconductor layer, in which the growing process is automatically controlled. According to the present invention, these and other objects and advantages are achieved by an MOCVD apparatus, in which a semiconductor substrate in a reactor chamber is rotated around its central axis and the substrate surface is arranged perpendicular to a plurality of vent pipes, thereby the diluted source material gas being spouted out in a direction substantially perpendicular to the substrate surface, with the gas flow rate through each vent pipe being adjustable or controllable. Further improvement of the apparatus can be achieved by adding a control mechanism for the dilution rate of the source material gas flowing through each vent pipe. Further objects and advantages of the present invention will be apparent from the following description, reference being made to the accompanying drawing wherein preferred embodiments of the present invention are clearly shown. BRIEF DESCRIPTION OF THE DRAWINGS Figs. 1 and 2 show schematically a cross section of a reactor chamber and a gas flow diagram of an MOCVD apparatus of the prior art, wherein two different vent pipe structures are shown respectively, Fig. 3 shows schematically a cross section of a reactor chamber and a gas flow diagram of an MOCVD apparatus in accordance with the first embodiment of the present invention, Fig. 4 shows a schematic diagram of a gas source system used in the present invention, Figs. 5(a) and 5(b) show a comparison test result on a thickness and an x-value respectively in growing a GaAsP layer on a substrate, wherein a solid curve shows the data obtained by the present invention and a dashed curve, by the prior art technology, Fig. 6 shows the second embodiment of the present invention, in which each gas flow through the vent pipes is automatically controlled by a controller, Figs. 7(a) and 7(b) show a perspective view of the vent pipes of the first and second embodiments respectively, Fig. 8 shows a gas flow diagram of the fourth embodiment of the present invention, Fig. 9 illustrates gas flow paths from the vent pipes onto the substrate, and Fig. 10 illustrates schematically a thickness distribution of the grown semiconductor on the substrate according to the present invention assuming that the substrate is stationary with regard to the reactor chamber. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT In the following explanation of the embodiments, same or like reference numerals designate same or corresponding parts previously referenced in Figs. 1 and 2. Fig. 3 is a schematic gas flow diagram including a cross section of a reactor chamber of the first embodiment according to the present invention. A cylindrical body 11 of a reactor chamber 5 is made of quartz glass and has a diameter of, for example, about 100 mm. The reactor chamber 5 has a metal cover 10 of stainless steel at an upper end portion of the cylindrical body 11 and the cover 10 is sealed with the body. A plurality of vent pipes 111 to 114 sealed with the cover 10 using O -rings (not shown), penetrate vertically therethrough, the seal position being aligned in the diametrical direction of the cover 10. In Fig. 3, vent pipes are illustrated as if there were a considerable gap between the vent pipes. In an actual structure, however, there is almost no gap, the vent pipes having an inside diameter of 8 mm and being arranged with an axial distance of 10 mm. A perspective view of the vent pipes is shown in Fig. 7(a). Spouting ends 108 of the vent pipes face the substrate 2 at a distance of about 50 mm therefrom. The semiconductor substrate 2, on which a compound semiconductor layer is to be grown, is loaded onto a susceptor 8 of sintered carbon, having a diameter of about 70 mm. The lower end portion of the cylindrical body 11 is sealed to a base member 12 of stainless steel using an O -ring (not shown) and an exhaust outlet 6 is provided on a side wall of the base member 12. The outlet 6 is connected to an exhaust system 18 when a low pressure MOCVD method is utilized. The susceptor 8 is supported by a support rod 7, which penetrates through the bottom portion of the base member 12 and is rotatable airtightly about its axis utilizing an O -ring or a fluid magnetic seal (not shown). The support rod 7 is rotated by a driving mechanism 19 during the operation. The special feature of the present invention is characterized by the gas supply system for source material gases and a dilution gas to be introduced into the reactor chamber. In Fig. 3, four vent pipes 111 to 114 of quartz glass are arranged colinearly and penetrate through the cover 10 and are sealed thereto. A gas flow control valve 13 to 16 is provided upstream, between a main pipe 20 and the inlet end 110 of each vent pipe. The main pipe feeds the diluted mixed source material gas, the flow thereof being closed or opened by a main valve V m . The main valve V m is connected to a dilution gas source 40 and source material gas sources 41, 42, and 43. In Fig. 3, these gas sources are schematically illustrated. An actual gas source system is shown in Fig. 4. for the simple case of InP grown on a binary substrate InP. A dilution gas source 40 is provided in a tank 50 containing hydrogen [ H₂] gas and its flow rate is controlled by a mass flow controller MFC₁ (mass flow controller is hereinafter abbreviated MFC). An indium gas source 41 is provided in a bubbler 51, containing trimethylindium [ In(CH₃)₃] , which is bubbled by hydrogen [ H₂] gas introduced through a MFC₂. The hydrogen [ H₂] gas transports trimethylindium [ In(CH₃)₃] vapor and is further mixed with a hydrogen [ H₂] gas supplied through a MFC₃. A phosphorous gas source 42 is provided in a tank 52 containing a phosphine [PH₃] gas, and is fed through a MFC₄ and further mixed with a hydrogen gas supplied through MFC₅. A metal organic gas containing vapor such as trimethylindium [In(CH₃)₃] reacts easily with a metal hydride gas such as phosphine [PH₃] , or arsine [AsH₃] in a heated atmosphere and deposits a compound on the substrate. However, in order to deposit a compound semiconductor layer having a uniform thickness and composition, the method of introducing these gases into a reactor chamber is an important problem. Generally, a hydrogen dilution gas source such as denoted by 40 is provided separately in order to obtain uniformity of the mixed source material gas. On the other hand, the introduction of hydrogen gas into each material gas source 41 to 43 such as shown in Figs. 3 and 4 permits bubbling of a metal organic source or mixing of output from the tank in order to obtain a precise flow rate of the source material gas by increasing the gas flow velocity. Though only three gas sources are illustrated in Fig. 4, other source material gases are added into the gas source system when necessary. For example, a gallium gas source is prepared in a bubbler containing trimethylgallium [Ga(CH₃)₃] or triethylgallium [Ga(C₂H₅)₃] bubbled with a hydrogen gas, and an arsenic gas source is prepared in a tank containing an arsine [AsH₃] gas. When a InGaP or InGaAs layer is grown on a GaAs or InP substrate respectively, the gas source system comprising three material gas sources and the dilution gas source is provided, three material gas sources being selected among the gallium, indium, arsenic and phosphorous gas sources. These source material gases are mixed and diluted with the hydrogen dilution gas before use. While feeding the above diluted mixed source material gas into the reactor chamber, the GaAs of InP substrate loaded onto the susceptor 8 is rotated at a speed of about 60 rpm, and is heated by a high frequency induction coil 17 disposed outside the reactor chamber 5. The substrate temperature is raised to about 650°C. In the first embodiment, the main pipe 20 is branched into four branch pipes 21 to 24, where the diluted and mixed source material gas is divided. The gas flow rate through each branch pipe is controlled by a gas flow control valve 13 to 16. The gas flow control valve in Fig. 3 is shown by a simplified symbol, however, in an actual application, a combination of a needle valve and a mass flow meter, or a mass flow controller (MFC) is utilized. The gas flow rate in each branch pipe is determined such that the grown semiconductor GaAsP or InGaAs layer has as uniform a thickness and alignment composition as possible. Therefore, the gas flow rate changes depending upon the kinds of gases, the temperature of the substrate, the pressure in the reactor chamber, etc. For example, the gas flow rate through branch pipes 21 and 24 is maintained at 1500 SCCM (standard cubic centimetres per minute) and the gas flow rate through branch pipes 22 and 23 is maintained at 1000 SCCM. This is because the gas flow rate directed toward the peripheral portion of the circular substrate surface should be larger than that directed toward the central portion thereof for obtaining the uniform thickness. One test result is shown in Figs. 5(a) and 5(b). An InGaAs layer having 1 µm thickness is grown on an InP substrate of 50 mm in diameter. Fig. 5(a) shows a thickness fluctuation along the diameter of the substrate and Fig. 5(b) shows a fluctuation of composition along the diameter, in which x denotes a mixing ratio of the mixed compound semiconductor InGaAs when it is represented by a formula In 1-x Ga x As. In the two figures, the dashed curve shows a test result of the grown InGaAs layer obtained by the prior art method, and the solid curve shows a test result according to the above embodiment. As shown in Fig. 5(a), the fluctuation in thickness, ranging from +10 % to -10 % in the prior art is reduced to within a ± range 3% range by utilizing the MOCVD apparatus of the first embodiment. Furthermore, as shown in Fig. 5(b), when the In 1-x Ga x As layer is grown with the aim of obtaining x = 0.53, the fluctuation of x-value is improved from about a ± 10 % range to a ± 3 % range. Thus figure 5(b) shows that a remarkable improvement is achieved in uniformity of the composition. Fig. 6 is a schematic gas flow diagram including a schematic cross section of a reactor chamber in accordance with the second embodiment of the present invention. Most of the structure is similar to that shown in Fig. 3 except that an automatic gas flow control system is added to the gas flow passages of branch pipes 21 to 24. In Fig. 6, a mass flow meter 25 to 28 and a flow adjustment valve 29 to 32 such as a needle valve, which responds to an electric signal, are inserted into each branch pipe 21 to 24. Moreover, a controller 33 comprising a microprocessor 34 and a memory unit 35, is operatively connected to each of the above mass flow meters and flow adjustment valves. The combination of a mass flow meter and a flow adjustment valve can be replaced by an MFC, which serves to control and maintain the gas flow rate at a predetermined value. The memory unit 35 stores the necessary data relative to the gas flow rate in each branch pipe, the required growth time in each step, etc. With a start command to the controller 33, the microprocessor 34 begins to read the data stored in the memory unit 35, compares these data with the measured flow rate in each branch pipe and controls the gas flow rate according to the predetermined data. In the above first and second embodiment, all source material gases and the hydrogen dilution gas are mixed and diluted in the gas source system and thereafter divided and fed to each branch pipe. However, when the mixed gas is flowing through the main pipe 20 or branch pipes at a very low velocity, which is often the case in a normal pressure MOCVD method, the mixed gases are liable to react mutually even when flowing through the pipe, resulting in the depositing of formed material onto the inside wall of the pipes. In the third embodiment which prevents the above reaction of the mixed gases within the gas supply system, one source material gas, which reacts readily with other source material gases, is supplied separately in another gas supply system. In this case, the above reactive source material gas is spouted out separately from another set of vent pipes into the reactor chamber. Fig. 7(a) shows a schematic perspective view of the vent pipes 111 to 114 fixed to the cover 10, which appears in Fig. 3, in a manner which has already been described, and Fig. 7(b) shows a similar view of the third embodiment with an additional set of vent pipes 111a and 114a provided. Fig. 8 shows a schematic gas flow diagram of the fourth embodiment of the present invention. There is no change in the other parts of the MOCVD apparatus with the exception of the gas supply system, hence only the gas flow diagram is shown in the figure. A gas source system 36 comprises a dilution gas source 40 and a plurality of source material gas sources, which are illustrated simply by a mixed material gas source 37 in Fig. 8. However, an outlet of the dilution gas source 40 is not connected directly to the main pipe as shown in Fig. 3, but connected separately to a dilution gas supply pipe 38. The outlet of the mixed material gas source 37 is connected to a material gas supply pipe 39. The dilution gas supply pipe 38 is branched into four dilution gas branch pipes 71 to 74. The material gas supply pipe 39 is also branched into four material branch pipes 61 to 64. In each branch pipe line 61 to 64 and 71 to 74, a mass flow controller denoted as MFC₆₁ to MFC₆₄ and MFC₇₁ to MFC₇₄ is inserted. Furthermore, each end of the dilution gas branch pipes 71 to 74 is connected with each respective outlet side of MFC₆₁ to MFC₆₄ of the material gas branch pipes 61 to 64. The material gas branch pipes 61 to 64 are finally connected to respective vent pipes 111 to 114. When an InP layer, for example, is grown on a substrate, the mixed material gas source 37 supplies a mixed gas of trimethylindium [In(CH₃)₃] and phosphine [PH₃], having a mixing ratio of 1:100. The dilution gas source 40 supplies a hydrogen [H₂] dilution gas. These two gases flow separately through the dilution gas supply pipe 38 and material gas supply pipe 39, and each gas flow is branched into four branch pipes. The flow rate in each branch pipe is precisely controlled by the MFC inserted in the branch pipe. It is known that the growth rate of InP layer on the substrate is proportional to a concentration of the source material gas, in this case, trimethylindium [In(CH₃)₃] and a square root of the velocity of gas flow on the substrate surface. In this embodiment, it becomes possible to control these two factors individually and more precisely. Fig. 9 illustrates the path of the gas flow schematically in the region from the spouting ends of the vent pipes 111 to 114 onto the substrate 2. The concentration of trimethylindium [In(CH₃)₃] in the diluted mixed gas through two vent pipes 111 and 114 disposed on either side is chosen to be higher than the concentration through vent pipes 112 and 113 disposed in the center. Assuming that the substrate 2 is made stationary with regard to the vent pipes 111 to 114, the growth rate of the semiconductor InP on the substrate is schematically shown by the curves 81 and 82 in Fig. 10. The direction A-A in Fig. 10 corresponds to the direction A-A in Fig. 9. Along the direction A-A, the growth rate on the peripheral portion of the substrate is higher than that on the central portion thereof. Along the direction B-B, perpendicular to A-A, however, the growth rate on the peripheral portion is lower than that on the central portion. When the substrate 2 is rotated about its central axis, while the gas flow rates through the two vent pipes 111 and 114 are maintained at a higher level than those through the two remaining vent pipes 112 and 113, a very uniform growth rate on the entire surface can be achieved. Test results for growing the InP layer having a thickness of 2 µm show that a thickness fluctuation within a 2 µm ± 0.02 µm range can be obtained, a remarkable improvement compared with the results of the order of 2 µm ± 0.06 µm of the prior art. Throughout the explanation of the preferred embodiments, four branch pipes and four vent pipes are used and illustrated, and vent pipes are aligned perpendicular to the substrate, spouting ends thereof facing toward the substrate and disposed symmetrically with regard to the center of the substrate. The number of branch pipes and vent pipes is not limited to any specific number, such as four ; and, moreover, vent pipes are not limited to colinear arrangement. Spouting ends of vent pipes may be arranged two-dimensionally, or asymmetrically with regard to the center of the substrate surface.

Claims: A metal organic chemical vapor deposition apparatus for growing a compound semiconductor layer on a substrate (2), said apparatus comprising : a reactor chamber (5) having an exhaust outlet (6) and a plurality of vent pipes (111, 112, 113, 114) of which one end protrudes into the reactor chamber (5) for spouting a mixed gas onto said substrate (2), and the direction of the gas spouting being arranged perpendicular to a surface of said substrate (2), means (7, 8) for supporting and rotating said substrate (2) enclosed in said reactor chamber (5), means (17) for heating said substrate disposed outside the reactor chamber (5), a gas source means (40, 41, 42, 43) for supplying said mixed gas to a main pipe (20), said mixed gas comprising at least a metal organic gas and a reactive gas with said metal organic gas, a plurality of branch pipes (21, 22, 23, 24) for feeding said mixed gas from said main pipe (20) to each of said vent pipes (111, 112, 113, 114), and means (13, 14, 15, 16) for controlling a gas flow through said branch pipes. A metal organic chemical vapor deposition apparatus according to claim 1, wherein said mixed gas further comprises a dilution gas which is inactive to other gases comprised in the mixed gas. A metal organic chemical vapor deposition apparatus according to claim 2, wherein said dilution gas is a hydrogen gas. A metal organic chemical vapor deposition apparatus for growing a compound semiconductor layer on a substrate (2), said apparatus comprising ; a reactor chamber (5) having an exhaust outlet (6) and a first and a second group of vent pipes (111, 112, 113, 114 and 111a, 112a 113a, 114a, respectively) of which one end protrudes into the reactor chamber (5), the first group of said vent pipes being provided for spouting a first kind of gas comprising a metal organic gas onto said substrate (2) and the second group of said vent pipes for spouting a second kind of gas comprising a reactive gas with the said metal organic gas onto said substrate (2), both directions of the gas spouting being arranged perpendicular to a surface of said substrate (2), each of said first and second groups having substantially the same number of vent pipes, said number of vent pipes in each of said groups being at least two, and each vent pipe of the first group being arranged adjacent to respective vent pipe of the second group, means (7, 8) for supporting and rotating said substrate (2) enclosed in said reactor chamber (5), means (17) for heating said substrate disposed outside the reactor chamber (5), a gas source means (40, 41, 42, 43) for supplying said first and second kinds of gas to a first and a second main pipe respectively, two sets of branch pipes (21, 22, 23, 24) for feeding said first and second kinds of gas from said first and second main pipes to said first and second groups of vent pipes respectively, and means (13, 14, 15, 16) for controlling a gas flow through said branch pipes. A metal organic chemical vapor deposition apparatus according to claim 4, wherein both said first and second kinds of gas further comprises a dilution gas which is inactive to other gases comprised in the first and second kinds of gas. A metal organic chemical vapor deposition apparatus according to claim 5, wherein said dilution gas is a hydrogen gas. A metal organic chemical vapor deposition apparatus for growing a compound semiconductor layer on a substrate (2), said apparatus comprising : a reactor chamber (5) having an exhaust outlet (6) and a plurality of vent pipes (111, 112, 113, 114) of which one end protrudes into the reactor (5) for spouting a diluted mixed gas onto said substrate (2), and the direction of the gas spouting being arranged perpendicular to a surface of said substrate (2), means (7, 8) for supporting and rotating said substrate enclosed in said reactor chamber (5), means (17) for heating said substrate disposed outside the reactor chamber (5), a gas source means (37, 40) for supplying a mixed gas to a first main pipe (39) and a dilution gas to a second main pipe 38, said mixed gas comprising a metal organic gas and a reactive gas with said metal organic gas, a first and a second set of branch pipes (61 to 64, 71 to 74), each set of the branch pipes having the same number of branch pipes as the said plurality of said vent pipes, one end of each of said first set of branch pipes (61 to 64) being connected to said first main pipe (39), and one end of each of said second set of branch pipes (71 to 74) being connected to said second main pipe (38), and the opposite end of each of said first set of branch pipes (61 to 64) being connected to a respective opposite end of each of said second set of branch pipes (71 to 74) and further connected to a respective inlet of said vent pipes (11 to 14), whereby said diluted mixed gas is supplied to each of said vent pipes, and means (MFC 61 to 64, MFC 71 to 74) for controlling a gas flow through said branch pipes. A metal organic chemical vapor deposition apparatus according to claim 7, wherein said dilution gas is a hydrogen gas. A metal organic chemical vapor deposition apparatus according to claim 7, wherein the gas flow rate of said dilution gas is larger than that of said mixed gas. A metal organic chemical vapor deposition apparatus according to claims 1, 4 or 7, wherein said means for controlling a gas flow comprises a combination of a gas flow meter (25 to 28) and a needle valve (29 to 32). A metal organic chemical vapor deposition apparatus according to claims 1, 4 or 7, wherein said means for controlling a gas flow comprises a mass flow controller (33). A metal organic chemical vapor deposition apparatus according to claims 1, 4 or 7, wherein said means for controlling a gas flow further comprises a controller (33) operatively connected to each means (29 to 32) for controlling a gas flow through said branch pipes, said controller further comprising a memory unit (35) and a microprocessor (34). A metal organic chemical vapor deposition method for growing a compound semiconductor layer on a substrate (2), said method comprising steps of : disposing said substrate (2) in a reactor chamber (5), said substrate being loaded on a support (8) and rotated about the center of said substrate, heating said substrate by a heating means (17) disposed outside the reactor chamber (5), flowing a mixed gas into the reactor chamber (5) through a plurality of vent pipes (111 to 114) and releasing the used mixed gas through an exhaust outlet (6) to the outside of the reactor chamber (5), and said mixed gas being spouted out onto the substrate surface substantially perpendicular thereto, wherein said mixed gas comprises at least a metal organic gas, and controlling each gas flow rate through said vent pipes (111 to 114). A metal organic chemical vapor deposition method according to claim 13, wherein said mixed gas further comprises a dilution gas which is inactive to other gases comprised in the mixed gas. A metal organic chemical vapor deposition method of growing a compound semiconductor layer on a substrate (2), said method comprising steps of : disposing said substrate (2) in a reactor chamber (5), said substrate being loaded on a support (8) and rotated about the center of said substrate, heating said substrate by a heating means (17) disposed outside the reactor chamber (5), flowing a first and a second kind of gas into the reactor chamber through a first and a second group of vent pipes (111 to 114, 111a to 114a) respectively and releasing the used gases through an exhaust outlet (6) to the outside of the reactor chamber (5), both said first and second kinds of gas being spouted out onto the substrate (2) substantially perpendicular thereto, wherein the first kind of gas comprises a metal organic gas and the second kind of gas comprises a reactive gas with said metal organic gas, and both said first and second groups of vent pipes having substantially the same number of vent pipes, said number of vent pipes in each of said groups being at least two, each vent pipe (111 to 114) of the first group being arranged adjacent to a respective vent pipe (111a to 114a) of the second group, and controlling each gas flow rate through said vent pipes and thereby a mixing ratio of the first kind of gas to the second kind of gas spouted onto the substrate (2). A metal organic chemical vapor deposition method according to claim 15, wherein both said first and second kinds of gas further comprise a dilution gas which is inactive to other gases comprised in each kind of gas. A metal organic chemical vapor deposition method for growing a compound semiconductor layer on a substrate (2), said method comprising steps of : disposing said substrate in a reactor chamber (5), said substrate being loaded on a support (8) and rotated about the center of said substrate, heating said substrate by a heating means (17) disposed outside the reactor chamber (5), flowing a diluted mixed gas into the reactor chamber (5) through a plurality of vent pipes (111 to 114) and releasing the used gases through an exhaust outlet (6) to the outside of the reactor chamber (5), said diluted mixed gas being spouted out from the vent pipes substantially perpendicular to the substrate surface, wherein said diluted mixed gas is formed by mixing a mixed gas (37) and a dilution gas (40) supplied through a first and a second set of branch pipes (61 to 64, 71 to 74) respectively, both sets having the same number of branch pipes as that of said vent pipes (111 to 114), and said mixed gas comprises a metal organic gas and a reactive gas with said metal organic gas, and controlling each gas flow rate through said branch pipes and thereby the concentration of the mixed gas in the diluted mixed gas. A metal organic chemical vapor deposition method according to claim 17, wherein said dilution gas is a hydrogen gas.

Inventors: FUJII, TAKUYA, YAMAZAKI, SUSUMU
Applicants: FUJITSU LIMITED
Application year: 1988
Main classification: C23C16
IPC codes: C23C16