Multilayer ceramic substrate and method for making the same

Abstract: A multilayer ceramic substrate comprises several conductive layers and at least one insulating layer therefor, whereby the insulating layer is formed from an inorganic composition comprising: - at least one member selected from Al₂O₃ and ZrO₂; together with a mixture of SiO₂, PbO and at least one member selected from the group of BaO, CaO and ZnO. The multilayer ceramic substrate can be sintered at low temperature in air resulting in the desired properties of heat resistance, solderability, insulation layer resistance and avoidance of microcrack formation when laser trimming a top resistance film.

Description: FIELD OF THE INVENTION AND RELATED ART STATEMENT 1. FIELD OF THE INVENTION The present invention relates generally to a multilayer substrate, and more particularly to a multilayer ceramic substrate which can be obtained by low temperature sintering and to a method for making the same. 2. DESCRIPTION OF THE RELATED ART Recently ceramic substrates are widely used in various electronic circuits, since it is not only easy to form a circuit by the thick film printing method but they are also splendid in heat radiation ability. Moreover, the multilayer ceramic substrate has come to be used for realizing a minimization and a high performance of the electronic circuits. The following three methods are generally known as the methods for making the multilayer ceramic substrate. (A) Printing multilayer method on a sintered ceramic layer, (B) Printing multilayer method on a green sheet, and (C) Green sheet laminating multilayer method. With reference to FIG.3, the method (A) is explained. A first conductive layer is printed on a sintered ceramic layer, and then it is dried and sintered (Steps 301--303). Next, a first insulation layer is printed on the first conductive layer, and then it is dried and sintered (Steps 304--306). Then, a second insulation layer is printed on the first insulation layer and is dried. A second conductive layer is printed on the second insulation layer and is dried (Steps 309--310), and then sintered together with the second insulation layer (Step 311). In the above-mentioned process, the first and the second insulation layers are printed in a manner such that small holes called "via-holes" are formed therein and the same material as that of the second conductive layer is packed into the via-holes thereby connecting the first and second conductive layers. Next, a third insulation layer is printed on the second insulation layer and it is dried and sintered. By steps similar to those of forming of the second insulation layer and the following layers, the conductive layers and insulation layers are laminated on and on. The method (B) is explained with reference to FIG.5. A first conductive layer is printed on the ceramic green sheet which is to be a substrate after sintering (Step 501). Then it is dried (Step 502). A first insulation layer is printed on the first conductive layer and it is dried (Steps 503--504). Then a second conductive layer is printed on the first insulation layer and dried (Steps 505--506). A second insulation layer is printed on the second conductive layer, and then it is dried (Steps 507--508). Thereafter in the similar manner, printing and drying of the conductive layers and the insulation layers are repeated predetermined times, thereby making a multilayer structure. The multilayer structure is sintered as a whole. Then, a top thick film comprising a top conductive layer, a top resistance layer and an overcoat glass is formed on the sintered multilayer substrate. The method (C) is explained with reference to FIG.4. Via-holes are formed in several green sheets of ceramic (Steps 401--403). The patterns of the via-holes are different in each green sheet . Then conductive layers each having different patterns are printed on the green sheets and dried (Steps 404--409). Next, the green sheets having the different conductive patterns are laminated (Step 410) and pressed to bond them into one body under a proper pressure and temperature (Step 411). Then, the resultant sheet is cut into proper shapes and sizes and sintered (Steps 412--413). Conduction between each of the conductive layers is made by the conductive material which is packed in the via-holes of the green sheets. Thereafter a top thick film is formed on the sintered multilayer substrate. When the above-mentioned three methods (A), (B) and (C) are compared with each other, in the method (A) although the formation of a multilayer structure is realized by a simple process, there is the problem of a limitation of the numbers of laminations, which is substantially at most 4--6. When the lamination number is more than stated above, considerable concave and convex parts, namely unevenness is generated on the surface, and as a result it is not suitable for practical use. In the method (B), it is possible to simplify the process by sintering the green sheet and the printed insulation layer and the printed conductive layer in one lot. However, the limitation of the number of laminations are 4--6 just like in the method (A), since the unevenness of the surface becomes considerable when the lamination number is high. In the method (C), the lamination number is not limited in theory. Moreover, lamination numbers of 30--40 have been actually realized. However, high grade techniques are required for making it, and there are many problems in the process for making it. Among the above-mentioned three methods, the method (C) is most related to the present invention. In the following, the conventional green sheet laminating multilayer method is explained in detail with reference to FIG.4. [First example of the conventional method] The first conventional example is a method for making a multilayer substrate of the high temperature sintering type. Several green sheets are prepared by making a mixture of alumina powder and of organic matter and forming it into a layer having a predetermined thickness. Each green sheet is provided with via-holes having different patterns (steps 401--403), and the conductive layers having different pattern are printed thereon (Steps 404--406) and then are dried (Steps 407--409). As a conductive material for the conductive layer, such metals as W and Mo are mainly used. Packing of the conductive material into the via-holes is made prior to or simultaneously with the printing of the conductive layer. After drying the conductive layer, a predetermined number of the green sheets each having a different conductive pattern are laminated and made into one body with pressure under the proper temperature (Steps 410--411). Next, the body is cut into a predetermined shape and size and is sintered at about 1600°C in a reduction atmosphere, thereby producing a multilayer substrate (Steps 412 and 413). After sufficiently washing the sintered multilayer substrate, the top thick film is formed thereon (Step 414). [Second example of the conventional method] The second example is a method for making the multilayer substrate of the low temperature sintering type as shown in Japanese published examined patent application Sho 59-22399. In the second conventional example, B₂O₃-SiO₂-PbO-Al₂O₃ system material is used for a ceramic layer. First, a mixture of B₂O₃-SiO₂-PbO-Al₂O₃ system material and organic matter is made into a sheet having a predetermined thickness, thereby preparing a green sheet. Several green sheets are provided with via-holes in a manner such that each green sheet has a different via-hole pattern. Thereafter, conductive layers each having a different pattern are printed on each green sheet and dried. Metals such as Ag, Au, Pd and Pt or alloys thereof are used as the conductive material. Packing of the conductive material into the via-holes is made prior to or simultaneously with the printing of the conductive layers. After drying the conductive layers, the green sheets each having a different conductive pattern are laminated and made into one body with pressure under proper temperature. Next the body is cut into a predetermined shape and size and sintered at a temperature of a range of 700--1400°C in air, thereby producing the multilayer ceramic substrate. After fully washing the sintered multilayer substrate, the top thick film is formed thereon. [Third example of the conventional method] The third conventional example is a method for making the multilayer ceramic substrate of a low temperature sintering type like the second example. This method is disclosed in US-A-4 624 934 (corresponding to the Japanese published unexamined patent application Sho 60-235744). In this example, B₂O₃-SiO₂-(Al₂O₃ or ZrO₂) system material is used for the ceramic composition. The process for making the multilayer ceramic substrate is the same as that of the aforementioned second conventional example. [Fourth example of the conventional method] The fourth conventional example is made by the inventors of the present invention and is disclosed in the Japanese published unexamined patent application Sho 61-186918. This example relates to a method for making a multilayer ceramic substrate of the low temperature sintering type like the second and third conventional examples. In this fourth conventional method, SiO₂-PbO-(Al₂O₃, ZrO₂ or TiO₂) system material is used for an insulation composition. However, in the first conventional example, the cost of equipment is high and the operation thereof is difficult, since the sintering temperature is considerably high and the sintering must be made in a reducing atmosphere. Moreover, alumina is used as a material for the green sheet and the sintering temperature thereof is high. Therefore, only metals having a high melting point such as W and Mo which have a resistance value of 7--15 mΩ/□ can be used for the conductive layer. As a result there is the problem that the resistance of the conductive layer is high. The conventional method of the second, third and fourth examples can solve the problems of the example 1. However, there are problems in that the multilayer ceramic substrates of them are insufficient as regards heat resistance and an undesirable warpage is caused in the sintering process at a temperature of 850°C after the printing and drying of the top thick film material. Further, there is the problem that when the insulation layer is sintered together with the conductive layer, the constituent of the conductive layer disperses into the insulation layer, and hence, the resistance value thereof becomes small, thereby inducing a decrease of the insulation ability. Moreover in the multilayer ceramic substrate shown in the above-mentioned conventional examples 1--4, there is a problem in that it is impossible to use the laser trimming method for trimming the top resistance layer for controlling the resistance thereof, since microcracks are caused on the top resistance layer and the insulation layer. Furthermore, in case that electronic components are mounted on the top conductive layer of the top thick film by soldering, the solder wettability and soldering strength of the top conductive layer have been insufficient. That is, the generation of microcracks and the solderability such as the solder wettability are dependent on the components and composition of the ceramic insulation layer. Accordingly, in the conventional multilayer ceramic substrate, it is substantially impossible to form the top resistance layer with a high resistance accuracy and to mount the electronic components by soldering, and therefore, the field of use thereof is limited to such electronic circuits where the top resistance layer or a high resistance accuracy thereof are not necessary and to such substrates where other methods than soldering can be used for mounting the electronic components. Moreover, when soldering can not be dispensed with, the soldering should be made after plating a metal on the top thick film. OBJECT AND SUMMARY OF THE INVENTION The object of the present invention is to provide a multilayer ceramic substrate which can be sintered at low temperature in atmosphere and which is capable of laser trimming of a top resistance layer without causing microcracks and is splendid in solderability. Another object of the present invention is to provide a method for making the above-mentioned multilayer ceramic substrate. These objects are accomplished by a multilayer ceramic substrate comprising: at least two conductive layers at least one insulation layer for insulating the conductive layers, said at least on insulation layer comprising the following members calculated as oxide: a) at least one member selected from the group consisting of Al₂O₃ and ZrO₂ of 32--58 % by weight, b) SiO₂ of 13--30 % by weight, c) PbO of 15--39 % by weight, and d) at least one member selected from the group consisting of BaO, CaO and ZnO of 0.5--12 % by weight. The multilayer ceramic substrate in accordance with the present invention may comprise: at least two conductive layers and at least one insulation layer for insulating said conductive layers, the at least one insulation layer comprising the following members calculated as oxide: a) at least one member selected from the group consisting of Al₂O₃ and ZrO₂ of 39--51 % by weight, b) SiO₂ of 19--25 % by weight, c) PbO of 22--32 % by weight and d) at least one member selected from the group consisting of BaO, CaO and ZnO of 2--8 % by weight. A method for making a multilayer ceramic substrate in accordance with the present invention comprises the steps of: preparing a slurry by mixing a binder and a composition comprising at least one member selected from the group consisting of Al₂O₃ and ZrO₂ of 39--51 % by weitht, and further comprising SiO₂ of 19--25 % by weight, PbO of 22-32 % by weight and at least one member selected from the group consisting of BaO, CaO and ZnO of 2--8 % by weight, preparing plural green sheets from the slurry, providing via-holes in the green sheets, packing a conductive material into the via-holes (2), printing a conductive layer on the green sheets, drying the conductive layer, laminating the green sheets with pressure, and sintering the laminated green sheets. The multilayer ceramic substrate in accordance with the present invention has the insulation layer made of inorganic compositions capable of the sintering at low temperatures of about 870°C--950°C, and it shows splendid characteristics as a ceramic substrate for forming an electronic circuit. In the substrate of the present invention, at least one metal selected from the group of Ag, Au, Pd and Pt, or at least one alloy made of at least two members selected therefrom can be used as a material for the conductive layer. These materials are hardly oxidized, and therefore, a reduction atmosphere is not required for the sintering. A low temperature sintering can be made in air, and therefore, the cost of equipment is lower, and operation thereof is simple. The resistance values of Au and Ag (1--3 mΩ/□) are lower than those of W and Mo (7--15 mΩ/□). Furthermore, the multilayer ceramic substrate of the present invention is splendid as regards heat resistance, and therefore, even when the top thick film material is sintered at a temperature of about 850°C, warpage thereof is not caused. Moreover, the insulation layer has a splendid resistance value, since the component of the inner conductive layer does not disperse into the insulation layer even when the insulation layer is sintered together with the inner conductive layer. In the substrate of the present invention, no microcracks are caused in the laser trimming of the top resistance layer. Further, soldering mounting of the electronic components onto the top thick film is possible without a plating treatment. In the substrate and method of the present invention, reasons for limiting the composition of the ceramic insulation layer are as follows: SiO₂ is the main constituent of the insulation layer (ceramic layer), and when SiO₂ is less than 13 % by weight (hereinafter "% by weight" is referred to as "%") dispersion of shrinkage ratio of the insulation layer in the sintering process is high. Further, it is impossible to use metals having a low melting point such as Ag, Au, Pt and Pd, since the sintering temperature is high. When SiO₂ is above 30 %, the bending strength is very small, and the shrinkage ratio in the sintering process is high, and therefore, the resultant multilayer ceramic substrate can not be used for practical purposes. Moreover, when SiO₂ is not in a range of 13--30 %, the characteristics of the sintering temperature, the shrinkage rate and the bending strength are almost satisfactory, but the crystallization balance with the other constituent elements is lost, and problems such as deterioration of the heat resistance and dispersion of the component of the inner conductive layer occur. That is, when the SiO₂ amount is too high or too small, the crystallization balance is lost, thereby inducing an increase of amorphous parts in the insulation layer. And as a result, softening of the substrate and transfer of the constituents thereof become considerable. Therefore, when the material of the top thick film is sintered at about 850°C (at this time, the multilayer ceramic substrate is sintered again), a considerable deformation of the top thick film such as a warpage is caused due to the softening of the underlying insulation layer. When the multilayer ceramic substrate is sintered being supported at both ends (not the whole surface), the deformation is most considerable. Moreover, when the transfer amount of the constituent is considerable, the constituent of the conductive layer disperses to the insulation layer and the constituent of the insulation layer disperses to the conductive layer, and as a result, the resistance value of the insulation layer lowers. Further the dispersion of the constituent of the insulation layer into the top conductive layer is caused by the loss of the crystallization balance and the transfer of the constituent, thereby lowering the solder wettability and soldering strength. The SiO₂ amount is more preferably 19--25 %. PbO is also one basic constituent of the insulation layer. When PbO is below 15 %, the insulation layer has a water absorption property and a bending strength which is small. In case of a poor bending strength, microcracks are caused on the resistance layer and the insulation layer, since they can not resist a heat-stress during the laser trimming. Moreover, when PbO is more than 39 %, the deformation of the ceramic substrate during the sintering is remarkably high. Furthermore, when PbO is outside the range of 15--39 %, the crystallization balance is lost like in the above-mentioned case of SiO₂, and the same phenomenon and problems are caused. PbO is more preferably 22--32 %. BaO, CaO and ZnO are main constituents for furthering the crystallization of the insulation layer, and they have further purposes such as improving the sintering ability and the dielectric loss tangent of the insulation layer and controlling the coefficient of thermal expansion thereof. When one member selected from the group of BaO, CaO and ZnO is below 0.5 %, the sintering ability is insufficient, and when it is above 12 %, the dielectric loss tangent is undesirably large. The coefficient of thermal expansion of the insulation layer is controlled depending on the kind of the multilayer ceramic substrate wherein the insulation layer is used. When the insulation layer is used for an ordinary thick film hybrid integrated circuit; and especially in case that the formation of the circuit is made by using a thick film conductive paste and a thick film resistance paste, it is desirable to adjust the coefficient of thermal expansion of the insulation layer to that of alumina to (6.0--6.5) x 10⁻⁶/°C. When a silicon chip of IC is directly mounted on the substrate, it is desirable to adjust the coefficient of the thermal expansion of the insulation layer to that of silicon to 4 x 10⁻⁶/°C. Although it is difficult to evaluate the insulation layer on the basis of only the coefficient of thermal expansion thereof, when the coefficient of the thermal expansion of the insulation layer is considerably different from those of alumina and silicon, the insulation layer can not be used for practical purposes. Moreover, if the one member selected from the group of BaO, Cao and ZnO is not in a range of 0.5--12 %, the crystallization balance is lost, and further, the forming of microcracks is caused on the top resistance layer and the insulation layer during the laser trimming of the top resistance layer. Furthermore, there are problems such as deterioration of the resistance value of the insulation layer and poor solderability of the top conductive layer like in the above-mentioned case wherein the SiO₂ amount is not in a preferable range. It is more preferable that at least one member selected from the group of BaO, CaO and ZnO is contained in a range of 2--8 %. Al₂O₃ and ZrO₂ are added as a core of crystallization and as a filler of the insulation layer. They improve the bending strength and suppress the dispersion of the sintering shrinkage ratio. When one member selected from the group of Al₂O₃ and ZrO₂ is below 32 %, the bending strength of the insulation layer is excessively small and the dispersion of the sintering shrinkage ratio is large, and therefore the resultant multilayer ceramic substrate can not be suitable for the practical use. On the other hand when the one member selected from Al₂O₃ and ZrO₂ is above 58 %, the sintering temperature becomes high and the sintering is apt to be insufficient. As a result, the insulation layer has water absorption property, and further, the bending strength of the insulation layer is small and the forming of microcracks is caused thereon in the laser trimming of the top resistance layer. It is more preferable that at least one member selected from the group of Al₂O₃ and ZrO₂ is 39--51 %. BRIEF DESCRIPTION OF THE DRAWINGS FIG.1 is a sectional view showing a multilayer ceramic substrate of the present invention. FIG.1a is a sectional view showing a multilayer ceramic substrate with top thick films on both sides thereof. FIG.2 is a flow chart showing an example of a process for making a multilayer ceramic substrate of the present invention. FIGs. 3, 4 and 5 are flow charts showing the conventional process for making a multilayer ceramic substrate. DESCRIPTION OF THE PREFERRED EMBODIMENT In the following, a multilayer ceramic substrate embodying the present invention and a method for making the same are explained with reference to FIGs. 1, 1a and 2. First, each material of a ceramic composition for an insulation layer (1) such as SiO₂, PbO, BaO, CaO and ZnO are weighed out in a proportion according to the following Table 1, and they are heated at 1400°C--1500°C for 1--3 hours to be melted, thereby making a glass plate by a process of, such as a roll-out method. This glass plate is ground into a powder having 0.5--5 µm of average particle diameter by using such as an alumina ball. Then a filler, such as Al₂O₃ and ZrO₂, having about equal particle diameter is added, thereby obtaining the inorganic composition for the insulation layer (1). Though the above-mentioned materials are represented as oxides, other forms of materials such as metal, carbonate and hydroxide can be used in a known process. Next, a method for making the multilayer ceramic substrate embodying the present invention is described, wherein the above-mentioned inorganic composition is used. Polyvinyl butyral of 10 weight parts, dibutyl phthalate of 6 weight parts, glyceryl monooleate of 0.4 weight parts, 1,1,1-trichloroethane of 20 weight parts and isopropyl alcohol of 39 weight parts are added to 100 weight parts of the above-mentioned inorganic composition. Then they are mixed for 24 hours by using a ball mill thereby making a slurry. A green sheet having 0.1 mm thickness is formed by applying the slurry on a polyester film by the doctor-blade method. The green sheet (1)(which is made to be an insulation layer by the sintering) is fully aged, and then, fine holes as via-holes(2)are formed mechanically therein (Steps 201--203). Then, a conductive material (7) which is constituted of an alloy made of 95 % of Ag and 5 % of Pd is packed into the via-holes (2) by a printing method using a metal mask. Next, a conductive layer (3) made of the same conductive material as the above-mentioned conductive material (7) is printed on the green sheets (1) (Steps 204--206) and dried (Steps 107--109). Several green sheets (1) each having different via-hole (2) patterns and different printing patterns of the conductive layer(3)are laminated (Step 210) and made into one body with a pressure of 200 Kg/cm² under a temperature of 80°C (Step 211). After cutting it into a predetermined configuration (Step 212), it is sintered under the condition of maximum temperature of 870--1340°C and a retention time at the maximum temperature of 60 minutes (Step 213) thereby producing the multilayer ceramic substrate shown in FIG. 1. The sintered multilayer ceramic substrate is washed with water by an ultrasonic washing method (Step 214), and then, as shown in FIG.1a top thick films (circuit) comprising top conductive layers (4), top resistance layers (5)and overcoat glasses (6) are formed on both sides thereof (Steps 215). The top resistance layer 5 is trimmed by the laser trimming method (Step 216). Then electronic components are mounted on the top conductive layer (4) by soldering (Step 217), thereby producing the multilayer ceramic substrate for the electronic circuit. Table 2 shows characteristics of the sintered multilayer ceramic substrate such as the bending strength, water absorption ratio and dielectric loss tangent. The sintering temperature of Table 2 is selected in a manner such that the water absorption ratio is 0 and the bending strength is maximum with presuming the approximate sintering temperature of the inorganic composition by a differential thermal analysis in advance. In evaluation of the deformation, the substrates are judged as not being suitable for practical use, when concave and convex parts, warpage, undulation or the like are observed with the eye on the surface thereof after the sintering. As for the heat resistance of the sintered substrate, a temperature whereat warpage of above 0.3 mm/100 mm is observed under a condition where the substrate is supported at both ends in 100 mm span and a retention time at peak temperature is 15 minutes,is regarded as a heat resistant temperature. When the heat resistant temperature is above 820°C, there is no problem in the practical use. It is more preferable when it is above 850°C. The dispersion of constituent of the conductive layer (3) is measured from a characteristic X ray image of a section of the substrate. (In this embodiment, especially the dispersion of Ag was observed.) When the depth of the dispersion is below 10 µm, there is no problem in the practical use, but the depth above 10 µm is not preferable. It is more preferable that the depth is below about 3 µm. The generation of microcracks in the top resistance layer (5) at the laser trimming is measured by observing the surface and the section thereof by an electron microscope. The solder wettability is evaluated by a diameter of spread solder under the condition of putting a 63Sn-37Pb solder disk having a 4 mm diameter and 2.85mm thickness on the top conductive layer (4) and reflowing it at 230°C. When the diameter of the spread solder is below 6.7 mm, the solder wettability is judged as insufficient. The soldering strength is evaluated by measuring the thick film adhesion strength of soldered wire to the top conductive layer (4) under the condition of soldering a plated wire of 0.6 mm diameter to the top conductive layer with the 63Sn-37Pb solder and pulling it after bending it in a right angle to the top conductive layer (so called, pealing method). The substrate showing a thick film adhesion strength of above 0.5 Kg/cm² is regarded as good. For reference, the characteristics of a 96 % Al₂O₃ layer which is the conventional insulation layer are shown in Table 3. As mentioned above, the multilayer ceramic substrate of the present invention can be sintered under such low temperature as 870--980°C, and has sufficient good characteristics as multilayer ceramic substrate for an electronic circuit. Further, its characteristics are superior to those of the conventional multilayer ceramic substrate wherein the insulation layer is made of conventional material such as the 96 % Al₂O₃ system material containing B₂O₃-SiO₂-PbO-Al₂O₃ and the B₂O₃-SiO₂ system material containing Al₂O₃ or ZrO₂. In the substrate and method of the present invention, the metals having low melting point which have low resistance values can be used as the conductive material, since the sintering temperature for forming the multilayer ceramic substrate is low. Therefore it is possible to lower the resistance value of resultant multilayer ceramic substrate and decrease the cost of equipment. The resistance value of the insulation layer (1) does not lower, since the dispersion of constituent of the inner conductive layer (3) into the insulation layer can be suppressed. Further, there is no problem of warpage of the substrate because of splendid heat resistance. Moreover, it is possible to control the resistance value of the top resistance layer (5) in high precision, since no microcracks are caused on the top resistance layer and the insulation layer (1) at the process of the laser trimming of the top resistance layer. Moreover, the solderability is splendid, and therefore, it is possible to mount the electronic components on the top conductive layer (4) by soldering.

Claims: A multilayer ceramic substrate comprising: at least two conductive layers (3), at least one insulation layer (1) for insulating said conductive layers, said at least one insulation layer comprising the following members calculated as oxide: a) at least one member selected from the group consisting of Al₂O₃ and ZrO₂ of 32--58 % by weight, b) SiO₂ of 13--30 % by weight, c) PbO of 15--39 % by weight and d) at least one member selected from the group consisting of BaO, CaO and ZnO of 0.5--12 % by weight. A multilayer ceramic substrate as claimed in claim 1 wherein a) the at least one member selected from the group consisting of Al₂O₃ and ZrO₂ is of 39--51 % by weight, b) the SiO₂ is of 19--25 % by weight, c) the PbO is of 22--32 % by weight and d) the at least one member selected from the group consisting of BaO, CaO and ZnO is of 2--8 % by weight. A multilayer ceramic substrate in accordance with claim 1 or 2, wherein, said conductive layer (3) is made of at least one metal selected from the group consisting of Ag, Au, Pd and Pt. A multilayer ceramic substrate in accordance with claim 1 or 2, wherein said conductive layer (3) is made of at least one alloy made of at least two members selected from the group consisting of Ag, Au, Pd and Pt. A multilayer ceramic substrate in accordance with claim 1 or 2, wherein a top resistance layer (5) or a top conductive layer (4) are further formed on a surface of said multilayer ceramic substrate. A multilayer ceramic substrate in accordance with claim 1 or 2, wherein a top resistance layer (5) trimmed by laser is formed on said multilayer ceramic substrate. A method for making a multilayer ceramic substrate comprising the steps of: preparing a slurry by mixing a binder and a composition comprising at least one member selected from the group consisting of Al₂O₃ and ZrO₂ of 39--51 % by weight, and further comprising SiO₂ of 19--25 % by weight, PbO of 22--32 % by weight and at least one member selected from the group consisting of BaO, CaO and ZnO of 2--8 % by weight, preparing several green sheets (1) from said slurry, providing via-holes (2) in said green sheets (1), packing a conductive material (7) into said via-holes (2), printing a conductive layer (3) on said green sheets (1), drying said conductive layer (3), laminating said green sheets (1) with pressure and sintering said laminated green sheets (1), A method for making a multilayer ceramic substrate in accordance with claim 7, wherein said slurry is prepared by using a ball mill. A method for making a multilayer ceramic substrate in accordance with claim 7, wherein said slurry is prepared by a doctor-blade method. A method for making a multilayer ceramic substrate in accordance with claim 7, wherein said conductive material (7) is made of one member selected from the group consisting of Ag, Au, Pd and Pt, and is packed into said via-holes (2) by using a metal mask. A method for making a multilayer ceramic substrate in accordance with claim 7, wherein said conductive material (7) is made of an alloy made of at least two members selected from the group consisting of Ag, Au, Pd or Pt, and is packed into said via-holes (2) by using a metal mask. A method for making a multilayer ceramic substrate in accordance with claim 7, wherein said green sheets (1) having said dried conductive layer (3) are laminated while they are warm.

Inventors: KUMAGAI KOICHI, SHIMAZAKI SHINJI, KUMAGAI, KOICHI, SHIMAZAKI, SHINJI
Applicants: MATSUSHITA ELECTRIC IND CO LTD, MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
Application year: 1988
Main classification: H05K1
IPC codes: H01L23, H05K1, C04B35, C03C3, C03C14, H05K3