A FIELD-EFFECT DEVICE WITH A SUPERCONDUCTING CHANNEL

Abstract: A field-effect structure, formed on a substrate (20) and comprising a channel (21) with source (22) and drain (23) as well as a gate (25) that is separated from the channel by an insulating layer (24). The channel is made of a high-T c metal-oxide superconductor, e.g., YBaCuO, having a carrier density of about 10²¹/cm³ and a correlation length of about .2 nm. The channel thickness is in the order of 1 nm, it is single crystalline and oriented such that the superconducting behaviour is strongest in the plane parallel to the substrate. With a signal of a few Volt applied to the gate, the entire channel cross-section is depleted of charge carriers whereby the channel resistance can be switched between "zero" (undepleted, superconducting) and "very high" (depleted).

Description: The invention concerns a field-effect device such as a field-effect transistor (FET) that can be utilized in electronic circuitry and that is suited for use in integrated circuits. The device comprises a layer of superconducting material forming the channel through which a current of charge carriers may flow, a pair of terminals for feeding a current through the channel, and a control gate for applying an electric field to the channel, the field affecting the charge carrier density within the channel zone under the gate. Field-effect transistors are well known and find wide applications, for example as a switching device, in memories or in logic circuitry. FET's with semiconductor channels, mostly consisting of silicon (Si) and, more recently, of gallium arsenide (GaAs), have become an established element in data processing systems. Great progress has been made in designing fast and small dimension devices, down to sub-micron structures, that lead to high package densities and thus to high speed integrated circuits. There is, however, a need for still faster circuits. Investigations have shown that silicon and gallium arsenide semiconductor devices can operate optimally at a temperature of about 77K, the liquid-nitrogen temperature range. This optimum performance at low temperatures, together with the fact that the resistance of metallic wiring or device connections decreases with decreasing temperature, make low temperature systems attractive. Regarding the development of low temperature devices, there have been proposals for semiconductor FET structures having superconductor source and drain electrodes and where the semiconductor current channel, due to the so-called "proximity effect", becomes superconducting in the vicinity of the superconductor electrodes. An article "Three-Terminal Superconducting Devices", written by W.J.Gallagher (IEEE Trans. on Magnetics, Vol. MAG-21, No.2, March 1985, pp 709-716) provides a brief description of such proximity effect devices as well as prior art references. Fabrication and operating margins of these devices would, however, be rather critical. Furthermore, there have been proposals for FET structures comprising a superconductor channel. They have been described, for example, in the following articles : "Superconducting Field-Effect Transistor" by F.F.Fang et al (IBM Technical Disclosure Bulletin, Vol.19, No.4, September 1976,pp 1461-1462), and in "Experimental Considerations in the Quest for a Thin-Film Superconducting Field-Effect Transistor" by A.F Hebard et al (IEEE Trans. on Magnetics, Vol.MAG-23, No.2, March 1987, pp1279-1282). These articles describe studies on structures with a superconductor channel having a thickness of about 10 nm. An applied electric field causes a slight change in carrier density in a thin surface layer at the gate-superconductor interface. This change in carrier density in turn results in a shift in transition Temperature T c in the thin layer. By applying signals to the gate, the thin layer can be switched between "superconducting" and "normal-conducting" states. This results in a change in channel resistance. Since the field-induced effect does not extend deeply into the channel material, various approaches to enhance the magnitude of the effect have been studied and published by A.T. Fiary and A.F. Hebard in two articles "Field-Effect and Electron Density Modulation of the Superconducting Transition in Composite In/InOx Thin Films" (Physica 135 B, 1985, pp 124 - 127, North-Holland, Amsterdam) and "Electric Field Modulation of Low Electron Density Thin-Film Superconductors" (Proc. Internat. Workshop on Novel Mechanism of Superconductivity, Berkeley, June 1987). There is another article on this subject by M. Gurvitch et al, "Field Effect on Superconducting Surface Layers of SrTiO₃" (Materials Research Society Meeting at Boston, Mass., US., Dec. 1986, pp 47 - 49). The drawback of these "surface effect" devices is that the change in channel resistance is still quite small. Even in the "switched" thin surface layer the change is only from metal-conducting to superconducting, and in addition, the bulk section of the channel that is not affected by the applied field acts as a metal-shunt. Therefore, the obtainable output signals are too small as to be able to drive next stage FET devices. Another drawback is that the change in T c is rather small, i.e., operating temperature (T op )requirements are stringent since, for proper operations, the T c of the thin layer has to change from "above T op " to "below T op ". At present, the speed of integrated circuits is essentially determined and limited by the relatively high resistance of the wiring and device connections rather than by the devices themselves. Further progress could, therefore, be achieved if the wiring could be made of superconductor material. At operating temperatures below T c of the superconductor material, the line resistance would be reduced to zero and systems with devices linked by resistance-free connections offer increased speed. This has become feasible since the discovery of a new class of high-T c metal-oxide superconductors (also referred to as ceramic superconductors) that were first described by G.Bednorz and K.A.Mueller in their article "Possible High-T c Superconductivity in the Ba-La-Cu-O System" (Z.Physics, Condensed Matter, Vol.64, 1986, pp 189-193). Further developments have resulted in metal-oxide superconductor materials, such as YBaCuO, having a T c well above the temperature of liquid nitrogen. Such composition has been described by C.W. Chu et al in an article "Superconductivity at 93 K in a New Mixed-Phase Y-Ba-Cu-O Compound System at Ambient Pressure" (Phys.Rev.Lett. 58, No. 9, March 1987, pp 908 - 910). With this development, integrated circuits, cooled with liquid nitrogen, and in which both, devices and connections consist of superconductor material are expected to become reality provided high performance devices, e.g., effective switching elements, can be designed. The obstacles encountered in using hybrid semiconductor-superconductor techniques would be removed. It is thus the main object of the present invention to provide a highspeed superconductor field-effect device that can be fabricated using the same technology as that used to produce the device connections and that can be operated as a switch at operating temperatures below the transition temperature T c of the superconductor material. The invention as claimed is intended to meet this objective and to remedy the drawbacks of hitherto known structures. It solves the task of providing a switch having a high ON-/OFF-current ratio in that the thickness of the superconductor channel is made sufficiently thin so that, when applying a control signal of proper magnitude (a few Volt are sufficient) to the gate, the channel becomes completely depleted of charge carriers. The advantages offered by the invention are mainly that the device provides a high-performance switch element that is capable of switching from zero resistance (when superconducting) to "insulating" (when the channel is depleted), it provides high outputs sufficient to drive connected field-effect devices, and that stringent operating temperature requirements are avoided because the operation does not rely on an "T c -shift" effect. In line with the main object, the device can be produced in the same high-T c superconductor technology that is used in fabricating the integrated circuit wiring and device connections. One way of carrying out the invention is described in detail below with reference to drawings in which Fig.1A & 1B illustrate, in a schematic cross-section, the ON- and OFF-states of a prior art FET that relies on surface field effects; Fig. 2 is a not-to-scale cross-sectional view of a FET structure in accordance with the invention; and Fig.3A & 3B illustrate, in a schematic cross-section, the ON- and OFF-states of the FET structure shown in Fig.2. The inventive field-effect device comprises, in principle, the same basic elements as the surface effect superconductor FET structures that have previously been investigated and described, e.g., in the above cited article that was published in the IBM Technical Disclosure Bulletin. Such a prior art structure and its operation are illustrated in Fig.1A and Fig.1B. On an insulating or semi-insulating substrate 10, a superconductor channel 11 of about 10 nm thickness is deposited and provided with source 12 and drain 13 terminals. Gate 15 is separated from the channel by an insulating layer 14. With properly chosen materials, at an operating temperature T op that is slightly above the transition temperature T c of the channel material, and with no gate voltage (V g = 0) applied, the channel is "normal"-conducting thus providing, in the OFF-state of the device, a finite conductivity current path. It is however to be noted that, because the superconductors used are metals, the conductivity is high even in the OFF- or "normal conducting-" state. In Fig.1A, the resulting current is indicated by arrows 16. The current is equally distributed over the entire cross-section of the channel under the gate. As illustrated in Fig.1B, application of a non-zero voltage (V g ≠ 0) causes a slight change in carrier density within a thin surface layer 11a of a few tenths of a nanometer thickness near the superconductor-insulator interface. This change in carrier density results in an increase in T c within the very thin surface layer, to a value above the operating temperature T op of the device, thereby making the thin layer superconducting. In this ON-state, the device provides a current path of very high conductivity. Arrow 17 represents the supercurrent flowing in the now superconducting layer 11a; there is no current flow in region 11b of the channel since it is shunted by the zero-resistance superconducting region 11a. The ON-/OFF-current ratio is limited because, in the OFF-state, the normal-conducting channel is still conducting a rather heavy current. Also, the current-carrying capability of the very thin channel 11a is severely restricted by the value of the maximum current density above which the material of the thin channel becomes normal-conducting. Such FET could not provide a sufficient output to drive a subsequent FET. Furthermore, it's operation would be very critical with regard to slight changes in operating temperature. Fig.2 illustrates the general structure of the inventive field-effect device consisting of a channel 21 which is deposited onto a substrate 20 and provided with source 22 and drain 23 leads as well as with a gate 25 that is separated from the channel by an insulating layer 24. In a preferred embodiment, the substrate consists of strontium titanate (SrTiO₃) on which the channel of a high-T c superconductor material, in the example YBa₂Cu₃O₇, is grown. The channel is very thin, in the order of 1 nm, and is single crystalline and oriented so that the super-conducting behaviour is strongest in the plane parallel to the substrate surface. For the growth of the thin channel layer an epitaxial process is used, followed by after-treatments such an oxygen anneal. Such techniques have, more recently, been developed. Growth processes such as molecular beam epitaxy (MBE), metal-organic vapor phase epitaxy (MOVPE) or chemical beam epitaxy (CBE) allow the growth of abrupt interfaces. In addition, the low growth rate and the precise control of the growth parameters allow to grow very thin layers. In special modified systems, the control of the growth process can be at the atomic level. Such techniques have, for instance, been described in U.S.Patent 4,058,430 and in the following articles: "Growth and Characterization of Compound Semiconductors by Atomic Layer Epitaxy" by M.A.Tischler et al (J.Cryst.Growth 77, 1986,pp 89-94); and "Atomic Layer Epitaxy" by H.Watanabe et al (Inst.Physics.Conf.Ser.No. 83, Chapter 1, 1986, pp 1-9). MBE-grown high-T c superconductors have been published e.g. in "Growth of high-T c Superconducting Thin Films using Molecular Beam Epitaxy Techniques" by C.Webb et al (Appl. Phys.Lett. 51, October 1987, pp 1191-1193); and "Single Crystal Superconducting YBaCuO Oxide Films by Molecular Beam Epitaxy" by J.Kwo et al (Conf. Proceed. "Novel Mechanism of Superconductivity", June 22-26, 1987, Berkely/U.S.). A suitable method for fabricating oriented layers using an evaporation process has been described by P.Chaudhari et al in an article "Critical-Current Measurements in Epitaxial Films of YBaCuO Compound" (Phys.Rev. Lett. 58, No.25, 1987, pp 2684-2686). Returning now to Fig.2 : On top of the channel 21 is an insulator layer 24 having a thickness that is sufficient to make tunneling effects negligible. A layer of 5 nm thick SrTiO₃ has been chosen, this material having a sufficiently high dielectric constant. This layer can be applied in an evaporation process such as chemical vapor deposition. The gate 25 is then deposited on the insulator. In the here described embodiment it is made of a high-T c superconductor, e.g. YBa₂Cu₃O₇, but any ordinary metal such as gold would work as well. Where a perovskite such as SrTiO₃ is used as insulator, the upper part of it could be made metallic either by using a reducing ambient or by doping with Nb so that a separate evaporation of a gate layer would not be required. Source 23 and drain 24 leads can consist of the same material as the superconductor channel or of another high-T c superconductor. An ordinary metal may also be chosen. Patterning of the structures can be done using conventional lithographic and/or etching methods. It should be noted that the ceramic superconductor materials such as the YBaCuO composition used in the described embodiment permit maximum current densities (above which the material becomes normal-conducting) of up to 10⁷ A/cm². The allowed channel current I max can then be calculated from the following equation I max = i (max) x ( w x d ) with i (max) = maximum current density w = channel width d = channel thickness For w = 10 µ and d = 1 nm, the calculated maximum current is 1 mA, i.e., an operating current level that is adequate for most applications. It is furthermore noted that the use of the very thin superconductor channel, which is in the order of 1 nm, is only feasible because of the small correlation length of about .2 nm along the crystallographic c-axis that is achievable with the new class of metal-oxide superconductors such as the YBaCuO composition used in the embodiment. Since superconductivity can only subsist in layers having a thickness of at least the correlation length of the superconductor material, channels of a convential metal-superconductor such as lead or niobium, having correlation lengths that are at least an order of magnitude higher than that of the metal-oxide superconductors, would have to be much thicker. This then would prevent complete channel depletion with reasonable gate voltages, i.e., the device could not operate as a switch as will be described for the inventive FET structure in the following. The operation of the superconductor FET will now be explained with the aid of Fig. 3A and 3B. With no gate voltage V g applied (Fig. 3B), channel 21 is superconducting and the resistance between source 22 and drain 23 is zero. If a voltage is applied to gate 25 (Fig. 3A), the carrier concentration in the channel is changed due to the field effect. With a sufficiently high gate voltage and proper polarity (a negative voltage for electrons or a positive voltage for holes), the extremely thin channel can, in the region underneath the gate, be completely depleted of the carriers. The channel becomes insulating, i.e., the channel resistance becomes very high. The relation between applied gate voltage V g and the depletion depth d is given by the following equation : with q = elemental charge n = carrier density (10²¹/cm³) t = thickness of insulating layer 24 ε i , ε s , ε o = dielectric constants of insulating layer material, superconductor and air, respectively The required gate voltage can be fairly low : With t = 5 nm and d = 1 nm, the gate voltage V g required for complete carrier depletion in the channel cross-section under the gate is about 5 Volt. In standard circuitry, operating with signal levels of a few Volt, the described FET can thus be operated as a switch having two states : an ON-state with supercurrent flowing through the zero-resistance channel (at V g = 0), and an OFF-state where the channel is depleted (V g ≠ 0), i.e., it is insulating and the current is switched off. The FET structure hereinabove described is distinct from previously known devices in that the channel is made thin enough to permit complete depletion of the channel cross-section under the gate, leaving no by-passing shunt. This results in an extremely high ON-/OFF-current ratio and provides, when operated at conventional current and voltage levels, for high output sufficient to drive connected FET devices. Use of the very thin (1 nm) channel is feasible because the correlation length of the metal-oxide class high-T c superconductor is sufficiently low (in the order of a few tenths of a nanometer), these high-T c superconductors allow a high current density (10⁷ A/cm²) that makes the device suitable for use in today's integrated circuits, and because recently developed epitaxy techniques permit the growing of extremely thin layers (1 nm and below). When operated as a switch, the inventive device does not rely on any T c - shift effect since there is no switching of the superconductor material between "superconducting" and "normal-conducting". Therefore, operating temperature requirements are not critical, allowing wide margins.

Claims: A field-effect device with a superconducting channel for use in electronic circuitry, the device comprising a substrate (20), a layer of metal-oxide superconductor material forming said channel (21), through which a current of charge carriers may flow, formed on said substrate (20), a pair of terminals (22,23) for feeding a current through said channel, a control gate (25) for applying an electric field to said channel (21), the field affecting the charge carrier density within the channel zone under said gate (25), and an insulating layer (24) that separates said gate (25) from said channel (21), characterized in that the thickness of said superconductor material is such that, when applying a control signal of sufficient magnitude to said gate (25), substantially complete carrier depletion can be achieved within the entire cross-section of said channel zone under the gate (25). A field-effect device as claimed in claim 1, wherein said channel (21) is single crystalline and oriented so that the superconducting behavior is strongest in the plane parallel to the substrate surface. A field-effect device as claimed in claim 1, wherein said channel has a thickness of about 1 nm. A field-effect device as claimed in claim 1, wherein said superconductor material forming said channel (21) has a transition temperature T c that is higher than the temperature of liquid nitrogen. A field-effect device as claimed in claim 1, wherein said superconductor material forming said channel (21) has a correlation length of less than 0,5 nm along the crystallographic c-axis. A field-effect device as claimed in claim 1, wherein said superconductor material forming said channel (21) has a carrier density of less than 10²²/cm³. A field-effect device as claimed in claim 1, wherein said insulating layer (24) has a thickness that is sufficient to avoid tunnel currents through the insulating layer. A field-effect device as claimed in claim 7, wherein said insulating layer (24) has a thickness of about 5 nm. A field-effect device as claimed in claim 1, wherein the magnitude of the control signal that is required to cause complete carrier depletion in the entire cross-section of the channel zone under the gate, is in the order of a few Volt.

Inventors: CHAUDHARI, PRAVEEN, MUELLER, CARL ALEXANDER, WOLF, HANS PETER
Applicants: INTERNATIONAL BUSINESS MACHINES CORPORATION
Application year: 1988
Main classification: H01L39
IPC codes: H01L39