Method of selectively forming a conductor layer

Abstract: A method of selectively forming (growing or depositing) a conductor layer (7) on an exposed surface of a semiconductor substrate (2) or a conductor by using a metal halide gas and a silicon hydride gas at a ratio of a flow rate of the latter gas to that of the former gas (e.g., Si n H 2n+2 /WF₆) of 2 or less, and setting a growth temperature at 200°C or less. When a Si₃H₈ gas and a WF₆ gas, in particular, are used at the ratio of the flow rates (Si₃H₈/WF₆) of 1.0 or less, and the deposition temperature is set at 100°C to room temperature, a silicon-containing tungsten layer is selectively deposited (formed).

Description: The present invention relates to a method of forming a conductor layer through a vapor growth (deposition) process. Recently, the number of components for a semiconductor device such as an LSI has increased and the dimensions of the device have been reduced. The filling of contact holes, reliability of conductor layers (interconnections), low resistance contact to a silicon substrate, barrier metal formation, etc., all require improvement. For example, the miniaturization of a conductor (interconnection) pattern is accompanied by a decrease in contact hole dimensions, and when a conductor layer is formed to come into contact with a silicon substrate through such a small contact hole, step coverage of the conductor layer becomes poor. To solve these step coverage problems, the contact hole is filled with a refractory metal such as tungsten (W), which is selectively deposited therein by vapor phase deposition (growth), and the conductor layer is formed over the filler (i.e.,refractory metal layer) to electrically connect with the silicon substrate through the filler. The selective deposition of W is carried out by using a reaction gas mixture of a WF₆ gas and a H₂ gas at a temperature of 400°C or more to obtain a practical deposition rate. A proposal was made in which tungsten silicide is selectively deposited by using a silane (SiH₄) gas instead of the H₂ gas (Japanese Unexamined Patent Publication (Kokai) No. 59-72132, published on April 24, 1984). In an example of Japanese Publication No. 59-72132, a contact hole is filled with a tungsten layer in a low pressure CVD (chemical vapor deposition) reactor under the conditions of flow rates of a WF₆ gas, a SiH₄ gas and an argon (Ar) gas of 1 cc/min, 3 cc/min and 1000 cc/min, respectively, an inside pressure of the reactor of 0.2 Torr, and a substrate temperature of 450°C. A method of depositing metal silicide such as molybdenum silicide and tungsten silicide (MSi x : M indicates metal, 1.7 ≦ x ≦ 2.3) by low-pressure vapor phase deposition is disclosed in Japanese Unexamined Patent Publication (Kokai) No. 62-267472 (published on November 20, 1987, later than the first priority date of the present application, and corresponding to U.S. Serial No. 863622). In this case, in Example 1 for example, a flow rate of a SiH₄ gas is 5 - 27 times as large as that of a MoF₆ gas and a blanket deposition instead of a selective deposition occurs. U.S. Patent No. 4,684,542 discloses that tungsten silicide (WSi x : 2.2 ≦ x ≦ 3.4, Fig. 5) is vapor phase deposited on a substrate by using a WF₆ gas and a higher order silane gas (Si n H 2n+2 , n = 2, 3, ...). In this case, a flow rate of the high order silane gas is larger than that of the WF₆ gas, and a blanket deposition instead of the selective deposition occurs. In the selective deposition of tungsten using the WF₆ gas and the H₂ gas, an encroachment or a worm hole in a silicon substrate occurs and increases the junction leakage in a semiconductor device. When the selective deposition is made using a SiH₄ gas instead of an H₂ gas, the deposition temperature is still relatively high, and a method of selective deposition at a lower temperature is required. The miniaturization and a greater integration of a semiconductor device are accompanied by a decrease in the width and thickness of a conductor layer of aluminum (Al) or aluminum alloy (Al alloy). Consequently, the generation of metal voids or hillocks, and the generation of stressmigration due to thermal stress and interlaminar stress and/or the generation of electromigration due to an increase of the current density, increase open circuit failures of the conductor layers. To decrease the open circuit failures, attempts have been made in which copper (Cu) and/or titanium (Ti) are added into Al (or Al alloy) of the conductor layer, the stress of a laminated layer is decreased, and a tungsten layer is selectively formed on a surface of the conductor layer only. Such a selective formation of tungsten is carried out by a vapor phase deposition due to a chemical reaction of a WF₆ gas and a SiH₄ gas. In general a selective or blanket deposition (growth) of tungsten or tungsten silicide is carried out at a relatively high temperature of 300°C or more, but as miniaturization is increased, the influence of thermal stress due to a formation process (e.g., increase of stressmigration) can not be ignored, and as a result, a lower temperature process (if possible, a formation process at room temperature) is required. An embodiment of the present invention may provide a method of selectively forming a conductor layer including a main component of refractory metal (e.g., W or Mo) on an exposed surface of a silicon substrate in a contact hole or on a conductor layer of Al, etc., to increase the reliability of conductor layers, at a lower deposition temperature. An embodiment of the present invention may also provide a method of increasing the adhesion strength of the conductor line selectively formed at a lower deposition (growth) temperature to the silicon substrate or conductor layer. According to one aspect of the present invention, there is provided a method of forming a silicon-containing metal layer on a conductive or semiconductive area of an insulating substrate surface, by a low pressure chemical vapor deposition using a metal halide gas and a silicon hydride gas as reaction gases, wherein a ratio of a flow rate of the silicon hydride gas to that of the metal halide gas is set at 2 or less and a deposition temperature of the film is set at 200°C or less, so as to selectively form the silicon-containing metal layer on the surface of the said conductor or semiconductor area of said substrate surface. The metal of the silicon-containing metal layer may be one of W, Mo, Ti, Ta, Pt or Pd. The silicon-containing metal formed in accordance with the method of the present invention may have the chemical formula MSi x (M indicates metal, the proportion (molar ratio) "x" of Si to M is 0.6 or less, preferably 0.01 ≦ x ≦ 0.1); namely, a smaller amount of silicon than a silicon content of a metal silicide MSi₂ is contained. This metal may contain a silicon impurity. The metal halide gas may be a conventionally used fluoride gas or chloride gas, such as WF₆ , MoF₆ , TaF₅, TiF₄ , WCl₆ , MoCl₆ , TaCl₅ and TiCl₄. Preferably, the silicon hydride gas is a gas indicated with a chemical formula Si n H 2n+2 (n = 1, 2, 3, ...). Since a higher order silane gas is adopted to lower the selective deposition temperature, as explained hereinafter, preferably disilane (Si₂H₆), and in particular, trisilane (Si₃H₈), are used. The preferable conditions for the selective formation of the silicon-containing tungsten film are as follows: when using a SiH₄ gas, the ratio of the flow rates (SiH₄/WF₆) is set to 2 or less and the deposition temperature is set to 200 to 180°C; when using a Si₂H₆ gas, the ratio of the flow rates (Si₂H₆/WF₆) is set to 1 or less and the deposition temperature is set to 200 to 80°C; and when using a Si₃H₈ gas, the ratio of the flow rates (Si₃H₈/WF₆) is set to 0.7 or less and the deposition temperature is set to 100° to room temperature. Preferably, an exposed surface of the silicon substrate and/or conductor layer is cleaned by an etching treatment immediately before the selective formation of the silicon-containing tungsten layer. An SiO₂ thin layer is easily formed on the silicon substrate surface, and an Al₂O₃ thin layer is easily formed on the Al (or Al alloy) conductor layer surface (namely, native oxide films are easily formed). If the oxide thin layers remain on the surfaces, these layers prevent the deposition growth of the silicon-containing metal layer, decrease the adhesion strength of the layer to the surfaces, and increase the contact resistance. The native oxide thin layers are then removed, and a good silicon-containing metal layer can be then selectively grown. In general, as the deposition temperature is lowered, the adhesion strength of the selectively formed film is decreased. Although the low temperature deposition (growth) reduces the thermal stress, the lowering of the adhesion strength may lower the reliability of a semiconductor device. To realize an increase of the adhesion strength and a low temperature process (growth), it is preferable that a buffer layer of refractory metal or silicon-containing metal is selectively formed to cover the exposed surfaces, by heating the silicon substrate or conductor line at a high temperature of 400 to 500°C for 10 to 30 seconds in a gas mixture containing a metal halide gas such as WF₆ and a reducing gas such as H₂ and SiH₄, before the above-mentioned selective formation of the silicon-containing metal layer. This buffer layer increases the adhesion strength and acts as the growth nuclei for a following deposition of a silicon-containing metal layer, to thus contribute to a uniform formation of the following layer in the semiconductor wafer. The present invention will be more apparent from the description of the preferred embodiments set forth below, with reference to the accompanying drawings, in which: Figs. 1A to 1D are schematic sectional views of a silicon substrate for illustrating a method of forming a silicon-containing metal layer exemplifying the present invention; Fig. 2 is a graph showing a relationship between deposition rates and deposition temperatures of tangsten layers when using silicone hydride gases and H₂ gas; Fig. 3 is a graph showing a relationship between the X-ray intensity and deposition temperature of tangsten layers when using silicon hydride gases; Fig. 4 is a graph showing X-ray diffraction patterns for silicon-containing metal layers when using WF₆ gas and SiH₄ gas; Fig. 5 is a graph showing X-ray diffraction patterns for silicon-containing metal layers when using WF₆ gas and Si₂H₆ gas; Fig. 6 is a graph showing a relationship between deposition rates and the ratio of flow rates (Si n H 2n+2 /WF₆); Fig. 7 is a graph showing a composition profile of a silicon-containing tungsten film in the thickness direction; Fig. 8 is a schematic sectional view of a silicon substrate having a contact hole filled with a silicon-containing metal layer and a metal layer; Figs. 9A - 9D are schematic sectional views of conductor (interconnection) layers of Al or Al alloy with a contact hole filled with silicon-containing metal layers, for illustrating a formation process thereof; Fig. 10 is a schematic sectional view of a conventional structure comprising an Al alloy conductor line and an insulator film; Fig. 11 is a schematic sectional view of a structure comprising an Al alloy conductor line covered with a silicon-containing layer and an insulator layer; Fig. 12 is a graph showing a cumulative percentage of open circuit failures of Al alloy conductor lines; Figs. 13A - 13D are schematic sectional views of a multilavel interconnection structure having Al alloy conductor layers covered with silicon-containing metal layers, for illustrating a formation process thereof; Fig. 14 is a schematic view of a reaction apparatus with a rapid heating device; and Fig. 15 is a graph of a temperature profile for a method of forming a silicon-containing metal layer according to the present invention, including a high temperature heating step at an initial reaction period. Referring to Figs. 1A to 1D, a contact hole opened in an insulator layer for connecting a conductor layer with a silicon substrate is filled with a silicon-containing metal layer selectively deposited (grown) in accordance with a formation method of the present invention. As shown in Fig. 1A, an insulator layer (SiO₂ layer) 3 is formed on a p-type silicon (Si) substrate 2 having an n-type impurity doped region 1, by a conventional process, e.g., a thermal oxidation process or a CVD process. In addition to SiO₂ , other materials such as PSG, BSG, BPSG, Si₃N₄ , and polyimide can be used for the insulator layer 3. The SiO₂ layer 3 is selectively etched to form a contact hole 4 in which the impurity doped region 1 is exposed, and while the substrate 2 is being transferred to a next process station, the exposed silicon is oxidized by oxygen in the air to form an SiO₂ native oxide thin layer 5 on the exposed surface of the impurity doped region 1. As shown in Fig. 1B, the SiO₂ thin layer 5 is removed by using an etching gas 6. This dry etching treatment is carried out by applying a high frequency power (13.56 MHz, 100 W) to an H₂ gas or an inert gas such as Ar, He, and N₂ under a low pressure condition to excite the gas into a plasma state and remove SiO₂ with a sputtering effect. SiO₂ can be removed by an etching using an activated halide (halogen containing) gas such as NF₃ , CCl₄ , SF₆, and BCl₃, with an energy source such as microwaves, high frequency waves, or ultraviolet light. In the etching process, not only the SiO₂ thin layer 5 but also the insulator layer (SiO₂ layer) 3 are simultaneously etched, but since the insulator layer 3 is much thicker than the SiO₂ thin layer 5, the insulator layer 5 remains almost unchanged. To prevent the formation of a new native oxide film on the exposed surface of the silicon substrate 2, i.e., to stop oxidation of the exposed surface in air, as shown in Fig. 1C, in accordance with the method of the present invention, a silicon-containing tungsten layer 7 is selectively formed on the exposed silicon surface of the impurity doped region 1, using a WF₆ gas and a silicone hydride gas, to fill the contact hole up to the level of the surface of the insulator layer (SiO₂ layers) 3. Next, as shown in Fig. 1D, a conductor layer of Al, Al alloy or the like is formed over the whole surface by a sputtering process or an evaporation process, and is selectively etched to form a conductor layer 8 having a desired pattern, and thus the conductor layer 8 is formed over silicon-containing tungsten layer 7. The above-mentioned formation of the silicon-containing tungsten layer is now explained with reference to Figs. 2 to 5, showing the results obtained from experiments made by the present inventor. For the growth, a cold-wall, parallel-plate and load-lock type reaction apparatus (reactor) was used, and reaction gases (WF₆ , and SiH₄ , Si₂H₆ , Si₃H₈ (4%/Ar) and H₂ (comparative example) serving as a reducing gas to WF₆) and a carrier gas (He or Ar) were used. The flow rates of the reaction gases were set at 1 to 20 SCCM, the flow rates of the H₂ and carrier gas were set at 0.5 to 2 SLM, the deposition temperature (substrate heating temperature) was set at room temperature to 460°C, and the deposition pressure (inside pressure of reactor was set at 0.2 to 0.3 Torr. Furthermore, the ratios of the flow rates of reaction gases were set as follows: SiH₄/WF₆ = 1.0 Si₂H₆/WF₆ = 0.5 Si₃H₈/WF₆ = 0.3 The deposition (growth) rates of the silicon-containing tungsten layers A, B and C and a tungsten layer D were the measured. The relationships of the deposition rates of the layers A to D to the deposition temperature are shown in Fig. 2. As seen from Fig. 2, the reduction reaction in the tungsten deposition (D) using WF₆ and H₂ is a rate-limited reaction, and the reduction reaction in the silicon-containing tungsten depositions (A, B and C) using WF₆ and Si n H 2n+2 (n = 1, 2, 3) according to this method is a mass-transport limited reaction. In the case of Si n H 2n+n , the larger the order "n", the lower the deposition temperature. Si₃H₈ causes a deposition at room temperature (25°C). This deposition rate is a deposition thickness per unit time on the exposed surface of a silicon substrate. If the deposition temperature in the silicon-containing tungsten deposition (A, B and C) rises, the deposition rates are decreased and within a range of suitable temperatures, a selective deposition (growth) due to an exposed surface reaction and a following surface reaction of the deposited silicon-containing tungsten predominates. When the temperature is high, a deposition due to a vapor phase reaction occurs, and silicon-containing tungsten is deposited not only in the contact hole but also on the insulator (SiO₂) film, and as a result, a blanket deposition occurs instead of the selective deposition. A deposition amount at the selective deposition portions is relatively decreased by using a portion of the deposition amount for deposition on the insulator layer. The X-ray diffraction intensities as a function of deposition temperature of the silicon-containing tungsten layers A, B and C is shown in Fig. 3. For the deposition (A) at SiH₄/WF₆ = 1, the higher the deposition temperature, the smaller the W(110) intensity, and the W₅Si₃(002) diffraction peak appears at a deposition temperature of 360°C and the intensity thereof is increased in correspondence with the rising temperature. The deposition (B) at Si₂H₆/WF₆ = 0.5 and the growth (C) at Si₃H₈/WF₆ = 0.3 have a tendency similar to that of the deposition (A). The X-ray diffraction patterns of the layers for the WF₆-SiH₄ reaction system at 320°C and 380°C (SiH₄/WF₆ = 1) and at 320°C (SiH₄/WF₆ = 4) are shown in Fig. 4. As seen from Fig. 4, at a constant ratio of the flow rates of the reaction gases (SiH₄/WF₆ = 1), the deposited layer at 320°C has a tungsten structure, and the deposited layer at 380°C has a tungsten structure and a W₅Si₃ structure. On the other hand, at a constant deposition temperature of 320°C, if the flow rate of SiH₄ gas is increased to SiH₄/WF₆ = 4, the silicon-containing tungsten film contains β-W in addition to α-W. This β-W is a metastable phase which is converted into α-W by a heat treatment at 700 to 900°C and has a high electric resistance. In Fig. 5 similar to Fig. 4, the X-ray diffraction patterns of the layer B for the WF₆-Si₂H₆ reaction system at 150°C, Si₂H₆/WF₆ = 1 and 220°C, Si₂H₆/WF₆ = 5 are shown. As seen from Fig. 5, the silicon-containing tungsten layer grown at 220°C, S₂H₆/WF₆ = 5 contains W₅Si₃ structure in addition to α-W(110). The present inventor carried out further experiments to determine the relationship between the growth rate and the ratio of the flow rates of the reaction gases (Si n H 2n+2 /WF₆), as shown in Fig. 6. With a constant flow rate (5 SCCM/min) of the WF₆ gas, the flow rates of SiH₄ , Si₂H₆, and Si₃H₈ were changed: symbols Δ, o and □ , indicate the deposition rates of the selective deposition of silicon-containing tungsten layers in the WF₆-SiH₄ reaction system (Δ) at 280°C, in the WF₆-Si₂H₆ reaction system (o) at 183°C, and in the WF₆-Si₃H₈ reaction system ( □ ) at 25°C, respectively. For the SiH₄/WF₆ reaction system, when the ratio of the flow rates (SiH₄/WF₆) exceeded 2, the selective deposition was apt to shift to blanket deposition. For the Si₂H₆/WF₆ reaction system, when the ratio of the flow rates (Si₂H₆/WF₆) exceeded 1, the selective deposition was apt to shift to blanket deposition. Furthermore, when the ratio of the flow rates (Si₃H₈/WF₆) exceeded 0.7, the selective deposition shifted to blanket deposition. From these experiments it can be seen that the preferable conditions for selectively forming a silicon-containing tungsten layer by using reaction gases of WF₆ and Si n H 2n+2 are as follows: for SiH₄ gas, a ratio of the flow rates (SiH₄/WF₆) is 2 or less and a deposition temperature is 380 to 180°C, preferably 200 to 180°C, to reduce thermal stress on an interconnection structure; for Si₂H₆ gas, a ratio of the flow rates (Si₂H₆/WF₆) is 1 or less and a deposition temperature is 200 to 80°C; and for Si₃H₈ gas, a ratio of the flow rates (Si₃H₈/WF₆) is 0.7 or less and a deposition temperature is 100°C to room temperature. To lower the deposition temperature, Si₃H₈ gas is most preferable. Where the silicon-containing tungsten layer has the chemical formula WSi x , the molar ratio "x" is 0.1 to 0.12 at SiH₄/WF₆ = 2; 0.01 to 0.1 at SiH₄/WF₆ = 1; and 0.05 or less at Si₂H₆/WF₆ = 0.5 and at Si₃H₈/WF₆ = 0.3. The silicon concentration of the layers is substantially lower than that of tungsten silicide WSi₂. A silicon-containing tungsten layer selectively formed at SiH₄/WF₆ = 1 has a component distribution in a thickness direction from the surface of the film, as shown in Fig. 7. The atomic concentrations of W and Si (in Fig. 7) are measured by SIMS (secondary ion mass spectrometry). As seen from Fig. 7, the layer has a uniform composition in a layer thickness direction. Furthermore, the silicon-containing tungsten layers formed at a description temperature of 200°C or less have a resistivity of 8 to 10 µΩcm, which is equivalent to that of a tungsten layer formed by WF₆-H₂ reaction system. As a ratio of a silicon hydride gas to a WF₆ gas is increased, or as the deposition temperature is increased, the resistivity of the layer is apt to increase. The silicon-containing tungsten formed at SiH₄/WF₆ = 2 at a deposition temperature of 380°C had a resistivity of 35 µΩcm. The reaction between a WF₆ gas and a Si n H 2n+2 gas at a low temperature is expressed as follows: WF₆ + 3 / 2 SiH₄ → W + 3 / 2 SiF₄ + 3H₂ (1) WF₆ + 3 / 4 Si₂H₆→ W + 3 / 2 SiF₄ + 9 / 4 H₂ (2) WF₆ + 1 / 2 Si₃H₈ → W + 3 / 2 SiF + 2H₂ (3) As a result, the ratios of the silicon hydride gases to the WF₆ gas are as follows: SiH₄ : Si₂H₆ : Si₃H₈ = 1.5 : 0.75 : 0.5 The normalized ratio of the flow rates of the silicon hydride gases to a flow rate of the WF₆ gas is indicated as: SiH₄ : Si₂H₆ : Si₃H₈ = 1 : 0.5 : 0.3 As a higher order silane gas is used, the necessary flow rate thereof becomes smaller. The experimental results in Fig. 6 fully support the above explanation. In addition to the above-mentioned silicon-containing tungsten layer, layers of silicon-containing refractory metals such as Mo, Ti, Ta, Pt and Pd can be formed. The formation of the silicon-containing refractory metal layer uses a halide gas thereof such as fluoride (MoF₆ , TiF₄ , TaF₅ or the like) and chloride (WCl₆ , MoCl₆ , TiCl₄ , TaCl₅ or the like). Furthermore, the silicon hydride halide gas such as SiH₂Cl₂ containing chlorine (Cl) and/or fluorine (F) can be used instead of the above-mentioned silicon hydride gas. The selective formation of silicon-containing metal layer using a silicon hydride gas according to the above method has a higher growth rate and a lower deposition temperature compared with that of a metal layer formation using a H₂ gas, and thus the reaction of a silicon substrate with the metal becomes low, i.e., the encroachment on the silicon substrate is reduced. Since the native oxide thin film of SiO₂ or Al₂O₃ is removed prior to the selective formation (vapor phase deposition) of the silicon-containing metal layer, a layer having an uniform thickness can be stably formed. Referring to Fig. 8, a contact hole is filled with a silicon-containing tungsten thin layer 11 and a tungsten layer 12 in accordance with an embodiment of the method of the present invention. A contact hole is formed in the insulator layer 3, to expose a surface of the impurity-doped region 1 of the silicon substrate 2, and a silicon-containing tungsten thin film 11 having a thickness of several tens of nanometers is formed on the exposed surface by the above-mentioned selective deposition of a silicon-containing tungsten using a WF₆ gas and a Si n H 2n+2 gas. Thereafter, a tungsten layer 12 is formed by a conventional selective deposition of tungsten using a WF₆ gas and a H₂ gas, to fill the contact hole, as shown in Fig. 8. To selectively deposit tungsten, a deposition temperature (substrate heating temperature) is set at, for example, 400 to 600°C, the WF₆ gas (2 to 10 SCCM) and the H₂ gas (1000 to 2000 SCCM) are used as reaction gases, and a deposition pressure is set at 0.1 to 1 Torr. In this case, a tungsten deposition rate is 200 to 300 nm/min. The reaction of the tungsten deposition is as follows: WF₆ + 3H₂ → W + 6HF + H₂ (4) Moreover, since the silicon-containing thin layer 11 is already formed and serves as a barrier layer, the silicon substrate 2 (i.e., the impurity-doped region 1) is not etched. In this embodiment, the filler in the contact hole is mainly tungsten, and thus the electric resistance of the filler is equivalent to that of a tungsten filler. The selective deposition of a silicon-containing tungsten layer on an exposed portion of a silicon substrate is explained hereinbefore. It is possible to selectively deposit a silicon containing tungsten on a conductor layer of Al or Al alloy, as explained hereinafter. As shown in Fig. 9A, an Al alloy conductor layer 21 is formed on an insulating layer (not shown) of a semiconductor device by a conventional method. An interlaminar insulator layer (SiO₂ film) 22 is formed over the whole surface including the conductor layer surface, by a CVD process, and the insulator layer 22 is selectively etched to open a contact hole 23 in which a portion of the conductor layer 21 is exposed. Between the etching step and a next step, the exposed Al alloy is oxidized by oxygen in the air, so that an Al₂O₃ (native oxide) thin layer 24 is formed on the exposed surface thereof. As shown in Fig. 9B, the Al₂O₃ thin layer 24 is removed by a dry etching treatment using, for example, an inert gas 25. It is also possible to remove the Al₂O₃ thin layer by a reactive ion etching or an etching using an activated halide(halogen containing) gas (e.g.CF₄, BCl₃ , and CCl₄) with ultraviolet light. Next, to prevent the exposed Al alloy surface of the conductor layer 21 from being reoxidized, i.e., preventing contact of the exposed surface with air, as shown in Fig. 9C, in accordance with the present invention, a silicon-containing tungsten layer 26 is selectively formed on the exposed Al alloy surface by using a WF₆ gas and a silicon hydride gas, to fill the contact hole 23. A conductor layer of Al alloy or the like is formed on the whole surface by a sputtering process and is selectively etched, as shown in Fig. 9D, to form a conductor line 27 having a desired pattern, and thus the upper conductor layer 27 is connected to the lower conductor line 21 through the filled silicon-containing tungsten layer 26. Where the WF₆ gas and the H₂ gas or silicon hydride gas are used as the reaction gases and come into contact with the Al alloy conductor layer, the WF₆ gas reacts with aluminum (Al) to form tungsten and AlF₃, as follows: WF₆ + Al → W + 2AlF₃ (5) AlF₃ is formed at an interface between the conductor layer (Al alloy) and the deposited tungsten (or silicon-containing tungsten) layer, to increase the contact resistance. AlF₃ is decreased by sublimation under conditions of a vacuum pressure and a high temperature (of 400°C or more). It is possible to suppress AlF₃ formation by using the silicon hydride gas, which has a stronger function as a reductor to WF₆ than that of the WF₆-H₂ reaction system (i.e., H₂ < Al < SiH₄ < Si₂H₆ < Si₃H₈). For example, for the WF₆-SiH₄ reaction system, the contact resistance between silicon containing tungsten and Al alloy is 2 to 3 times as large as (at a growth rate of 2 tm/min), and 20 to 30 times as large as (at a growth rate of 0.25 tm/min), that between Al/Al. But, in the WF₆-H₂ reaction system, the contact resistance between silicon-containing tungsten and the Al alloy is several tens to hundreds of times as large as that between Al/Al, and thus the contact resistance to the Al alloy according to the present invention is smaller than that of the WF₆-H₂ reaction system. When a conductor pattern of Al or Al alloy is scaled down, open circuit failures increase due to a generation of voids and hillocks, thermal migration and electromigration. The selective formation of a silicon-containing tungsten layer over the conductor pattern according to the present invention effectively decreases these failures. Figure 12 shows the results of a stress test for Al alloy interconnections of different structures. The structure of the sample H in Fig. 12 is shown in Fig. 10 and that of the samples I and J is shown in Fig. 11. The sample H in Fig. 12 according to a prior proposal is fabricated in the following manner. As shown in Fig. 10, a PSG insulator film 31 is formed on a silicon substrate (not shown); an Al alloy (Al-Si alloy) layer having a thickness of 1.2 tm is formed over the PSG insulator layer by a sputtering process and is patterned by etching to form a conductor layer 32 having a width of 1.0 tm and a total length of 40 m; another PSG insulator film 33 is formed overall by a CVD process; and a Si₃N₄ film 34 is formed on the PSG layer 33 by a CVD process. As shown in Fig. 11, samples I and J are fabricated in the same manner as that of sample H, except that a silicon-containing tungsten layer 35 is additionally and selectively formed over the Al-Si alloy conductor layer 32. The silicon-containing tungsten layer in sample I is formed using a gas mixture containing WF₆ and SiH₄ at a ratio of the flow rates of a WF₆ gas and a SiH₄ gas (SiH₄/WF₆) of 1 at a growth temperature of 350°C, and, in sample J, is formed using a gas mixture containing WF₆ and Si₃H₈ at a rate of the flow rates of a WF₆ gas and a Si₃H₈ gas (Si₃H₈/WF₆) of 0.3 at room temperature. These samples H, I and J are subjected to accelerated stress testing at a constant heating temperature of 180°C for 1000 hours, to determine the occurrence of open circuit failures. The result are shown in Fig. 12. A cumulative number of open circuit failures includes the case wherein a conductor layer resistance is increased by 10% or more. As seen from Fig. 12, the number of open circuit failures in sample H of the prior art increase with a lapse of time. In the case of sample J, in which the conductor layer is covered with the silicon-containing tungsten layer deposited at room temperature, the number of open circuit failures does not increase during a test of up to 1000 hours. In sample I having the coating layer of silicon-containing tungsten formed at 350°C, the number of open circuit failures is increased after 700 hours. In this case, the failure increase may be caused by a diminished cross section of the conductor layer 32 caused by a generation of voids and hillocks, by a breakage of the conductor layer, and by other factors. Nevertheless, compared with sample H, it is apparent that the open circuit failures are substantially prevented in samples I and J. As illustrated in Figs. 13A to 13D, a multilevel interconnection structure having conductor layers of Al or Al alloy in an semiconductor device is formed in the following manner, using a silicon-containing tungsten deposition method exemplifying the present invention. As shown in Fig. 13A, an insulator layer (SiO₂ layer) 42 is formed on a silicon substrate 41 by, for example, a thermal oxidation process. An Al (or Al alloy) layer is formed on the insulator layer 42 by, for example, a sputtering process and is patterned by etching to form a first conductor layer 43 having a desired pattern. Since the Al (or Al Alloy) of the conductor layer 43 is very easily oxidized to form an Al₂O₃ thin layer (not shown) on the surface thereof, a pretreatment for removing the Al₂O₃ thin layer is conducted. For example, a plasma reactive etching process is carried out by using an etching gas of BCl₃ (10 SCCM) under a pressure of 0.7 Torr and applying a high-frequency power of 100 W (13.56 MHz), and sequentially, a plasma sputter etching process is carried out by using a H₂ gas (500 SCCM) under a pressure of 0.3 Torr and by applying the same high-frequency wave power. In this case, the reactive etching process with BCl₃ gas removes most of the Al₂O₃ thin layer and the sputter etching process with H₂ gas cleans the surface of the conductor layer 43 and that of the insulator layer 42. Thereafter, in accordance with the method of the present invention, a WF₆ gas and a silicon hydride (Si n H 2n+2 ) gas are used to selectively form a silicon-containing tungsten layer 44 over the surface of the conductor layer 43 only. The conditions for a selective formation of the silicon-containing tungsten layer 46 are similar to those for the above-mentioned selective formation thereof on the exposed surface of the silicon substrate. Preferably, the silicon-containing tungsten layer is formed by using a Si₃H₈ gas (1 SCCM), a WF₆ gas (5 SCCM) and an Ar carrier gas (500 SCCM) under a pressure of 0.3 Torr and at a deposition (growth) temperature of 25°C (room temperature). In this case, heating of the substrate is not required, and AlF₃ is not substantially formed on the Al (or Al alloy) surface (i.e., at the interface of Al and deposited tungsten), since SiH₈ is highly reactive as a reducing agent. Next, as shown in Fig. 13B, an insulator layer (interlaminar insulating layer) 45 of PSG, SiO₂ , etc., is formed overall by a CVD process, and is selectively etched to form a contact hole 46. On the silicon-containing tungsten layer 44 exposed in the contact hole, as shown in Fig. 13C, another silicon-containing tungsten layer 47 is selectively formed in the above-mentioned manner using a WF₆ gas and a silicon hydride gas, to fill the contact hole. As shown in Fig. 13D, a second conductor layer 48 of Al (or Al alloy) is formed in the same way as the first conductor line 43, and a native oxide Al₂O₃ thin layer (not shown) is removed from the surface of the conductor layer 48 by a plasma etching pretreatment. Then a silicon-containing tungsten layer 49 is formed over the surface of the second conductor layer 48 in the same way as for the layer 44 on the first conductor layer 43. Accordingly, a multilevel interconnection structure having Al (or Al alloy) layers (interconnections) covered with silicon-containing tungsten layers and a filler of the silicon-containing tungsten within the contact hole, is obtained. The obtained structure has a high reliability and a low contact resistance. Where a silicon-containing tungsten layer is selectively formed on different exposed surfaces (for example, an n-type region surface and a p-type region surface or an exposed surface of an impurity-doped region having a predetermined dose and another exposed surface of another impurity-doped region having a dose which is different from the predetermined dose) of a silicon substrate by using a WF₆ gas and a silicon hydride gas in accordance with the method of the present invention, the deposition (growth) of the layer starts at different times, depending on the surfaces, which results in a dispersion of the layer thickness. The lower the deposition temperature, the larger the difference in the starting times. Depending on the surface conditions of a conductor layer of Al (or Al alloy), the surface conditions of a silicon substrate, the impurity conductivity-types of the semiconductor, and the impurity concentrations, an adhesion strength of the silicon-containing layer varies, and the layer may peel off to cause a contact failure. Therefore, the peeled layer becomes a contaminant and has a harmful influence on the growth. To eliminate this defect, preferably a buffer layer of silicon-containing tungsten is formed over an exposed silicon or an exposed Al (or Al alloy), at a high temperature for a short time, prior to the selective formation of the silicon-containing tungsten layer exemplifying the present invention. The deposited buffer layer acts as a deposition nuclei for a following vapor phase deposition, so that the following deposition starts at almost the same time, regardless of the exposed surface conditions. In addition, the high temperature of the initial reaction improves the bonding between the silicon-containing tungsten and the silicon or Al, so that the adhesion strength is increased and is unified throughout the wafer. The initial reaction is considered to be a self-limited surface reaction between the silicon (or metal) itself and a metal halide gas (WF₆ gas). In the case of silicon, the silicon surface is covered with metal (M) in accordance with the following reaction: MX n + Si Ð M + SiX n è (6) (M is a metal such as W and X is a halogen such as F) The present inventor experimentaly confirmed that the initial reaction took place in a time of approximately 10 seconds, and as the temperature is raised, the initial reaction takes place uniformly throughout the wafer. But, if the high temperature deposition is continued after the completion of the initial reaction, a reaction between the silicon substrate and a metal such as tungsten proceeds, whereby the silicon substrate is attached. The high temperature deposition including the initial reaction then must be finished in as short a time as possible (preferably, within 10 to 30 seconds). Thereafter, the silicon-containing tungsten layer is uniformly and thickly formed under a mass-transport limited reaction condition, in which a deposition (growth) rate is not substantially influenced by the (deposition) growth temperature, in accordance with the method of the present invention. In the case of Al, the Al surface is covered not only with metal (M) but also AlX n (i.e., AlF₃), which is simultaneously deposited in accordance with the following reaction: MX n + Al Ð M + AlX n  The deposition of AlF₃ can be relatively decreased by adopting a Al-Si n H 2n+2 reaction system, in particular, Al-Si₃H₈, because Al-Si n H 2n +2 has a greater reactivity than Al-MX n . In addition, the deposited AlF₃ can be removed by sublimation in a vacuum at a high temperature of 400°C or more. After completion of the initial reaction, the silicon-containing tungsten layer can be formed in the same manner as for the above-mentioned silicon. The silicon-containing tungsten layer deposition with the buffer layer is carried out as follows. Where a reaction apparatus 51 shown in Fig. 14 is used, a silicon substrate 52 is put on a transparent plate (for example, of quartz) 53 and heating lamps (infrared lamps) 54 are set under the transparent plate 53. A shower 55 for mixing and spouting reaction gases and a carrier gas (WF₆ + Si n H 2n+2 + H₂ + He (or Ar)) is furnished above the silicon substrate 52. The heating lamps can be placed above to heat the substrate from the opposite side. The silicon substrate 52 comes into direct contact with the transparent plate 53, without introducing the reaction gases to the backside of the substrate 52. A gas having no influence on the reaction can be blown onto the backside of the substrate. First, the reaction apparatus 51 is evacuated by a vacuum pump (not shown). As shown in Fig. 15, the silicon substrate 52 is rapidly heated by the heating lamps 54 to a high temperature of, for example, 400°C, and is held thereat for an initial reaction period I of approximately 10 seconds. When the temperature reaches the desired high temperature, a WF₆ gas (2 SCCM), a SiH₄ gas (2 SCCM) and a He gas (500 SCCM) are allowed to flow through from the shower 55 toward the silicon substrate 52, so that a silicon-containing tungsten buffer layer having a thickness of approximately 10 nm is selectively formed. In the initial reaction period, preferably an inside pressure is set at approximately 0.01 - 0.1 Torr. An H₂ gas can be used instead of the SiH₄ gas and an Ar gas used instead of the He gas. Thereafter, the silicon substrate 52 is naturally or forcibly cooled to a temperature suitable for the selective formation of a silicon-containing tungsten layer, utilising a method of the present invention. Next a WF₆ gas and a Si n H 2n+2 (n = 1, 2, 3, 4) gas are allowed to flow through the shower 55 during a film formation period II, so that a silicon-containing tungsten layer having a desired thickness is selectively formed on the the buffer layer. For example, a WF₆ gas (2.5 SCCM) and a Si₂H₆ gas (1 SCCM) flow for approximately 1 minute on the silicon substrate 52 heated at approximately 120°C. When a Si₃H₈ gas is used as the gas, the deposition is performed at room temperature. In this case, the heating of the silicon substrate is carried out for a short temperature rise time and an initial reaction period I of approximately 10 seconds. Thus, by the method of the invention, a silicon-containing metal layer may be selectively formed at a lower temperature with a faster deposition (growth) rate than those of a conventional selective deposition of tungsten by using a WF₆ gas and a H₂ gas. When the method of the present invention is applied to an interconnection of Al or Al alloy, the reliability of the interconnection may be increased, whereby the reliability of a semiconductor device is improved. Furthermore, a silicon-containing metal (refractory metal) layer can be selectively deposited by using Si₃H₈ at room temperature. In this case, a heating device or the like is not necessary and the apparatus can be simplified. It will be clear that the present invention is not restricted to the above-mentioned embodiments and that many variations are possible for persons skilled in the art without departing from the scope of the invention. As explained above, the present invention may provide a method of selectively forming a silicon-containing metal layer to fill a contact hole for a silicon substrate or a conductor layer of, for example, aluminium of a semiconductor device, or to cover a conductor layer in a semiconductor device.

Claims: A method of selectively forming a silicon-containing metal layer, on a conductive or semiconductive area of an insulating substrate surface, by a low pressure chemical vapor deposition using a metal halide gas and a silicon hydride gas as reaction gases, wherein the ratio of the flow rate of said silicon hydride gas to that of said metal halide gas is set at 2 or less and the deposition temperature is set at 200°C or less. A method according to claim 1, wherein said conductive or semiconductive area is an exposed surface within a contact hole opened in an insulator film or an exposed surface of a conductor layer formed on an insulator. A method according to claim 1 or 2, wherein the metal of said silicon-containing metal layer contains at least one metal selected from the group consisting of tungsten, molybdenum, titanium, tantalum, platinum and palladium. A method according to claim 3,wherein said metal is tungsten. A method according to any preceding claim, wherein said metal halide gas is a metal fluoride gas. A method according to claim 5, wherein said metal fluoride gas contains one selected from the group consisting of WF₆ , MoF₆ , TaF₅ and TiF₄. A method according to claim 1,2,3 or 4, wherein said metal halide gas is a metal chloride gas. A method according to claim 7, wherein said metal chloride gas contains one selected from the group consisting of WCl₆ , MoCl₆ , TaCl₅ and TiCl₄. A method according to any preceding claim, wherein said silicon hydride gas is a gas having a chemical formula: Si n H 2n+2 (n = 1, 2, 3 ...). A method according to claim 1, 2 or 3, wherein said silicon hydride gas is a silane (SiH₄) gas, said metal halide gas is a WF₆ gas, said ratio of flow rate of the SiH₄ gas to that of the WF₆ gas is two or less, and said deposition temperature is in a range of from 200 to 180°C. A method according to claim 1, 2 or 3, wherein said silicon hydride gas is a disilane (Si₂H₆) gas, said metal halide gas is a WF₆ gas, said ratio of a flow rate of the Si₂H₆ gas to that of the WF₆ gas is 1 or less, and said deposition temperature is in a range of from 200 to 80°C. A method according to claim 1,2 or 3, wherein said silicon hydride gas is a trisilane (Si₃H₈) gas, said metal halide gas is a WF₆ gas, said ratio of a flow rate of the Si₃H₈ gas to that of the WF₆ gas is 0.7 or less, and said deposition temperature is in a range of from 100°C to room temperature. A method according to any preceding claim, further comprising a step of cleaning said surface of the conductor or semiconductor by an etching treatment, immediately before said vapor phase deposition. A method according to claim 13, wherein said etching treatment is a dry-etching process using an etching gas selected from the group consisting of NF₃ , carbon halide, SF₆ , BCl₃ , H₂, and an inert gas. A method according to claim 14, wherein, in said dry-etching process, said etching gas is activated with an energy selected from the group consisting of microwaves, high-frequency waves, and a UV radiation. A method according to any preceding claim, further comprising, before said vapor phase deposition, a step of selectively forming a buffer layer of metal or silicon-containing metal on the surface of said conductor or semiconductor area by heating said surface at a high temperature in the range of from 400 to 500°C for a short period of from 10 to 30 seconds in a gas mixture containing said metal halide gas and a reducing gas. A method according to claim 16,wherein said buffer layer of tungsten or silicon-containing tungsten is selectively formed by using a WF₆ gas and said reducing gas of H₂ or SiH₄. A method according to claim 17,wherein said silicon-containing metal layer is formed to a desired thickness on said buffer layer by using a WF₆ gas and a Si n H 2n+2 (n = 2, 3, 4) gas at a ratio of the flow rate of the Si n H 2n+2 gas to that of the WF₆ gas of 1 or less at a deposition temperature of 200°C or less. A method of fabricating a semiconductor device provided with a multilevel interconnection structure having conductor layers of aluminum or aluminum alloy, comprising steps of: (a) forming a first conductor layer on an insulating film formed on a semiconductor substrate; (b) selectively forming a first silicon-containing metal layer on the surface of said first conductor layer; (c) forming an interlaminar insulating film overall; (d) selectively etching said interlaminar insulating film to open a contact hole in which a portion of said first conductor layer is exposed; (e) selectively forming a second silicon-containing metal layer within said contact hole; (f) forming a second conductor layer over said second silicon-containing metal layer and said interlaminar insulating film; and (g) selectively forming a third silicon-containing metal layer on said second conductor layer, wherein, said steps (b), (e) and (g) are carried out by using a metal halide gas and a silicon hydride gas as reaction gases at a ratio of a flow rate of said silicon hydride gas to that of the metal halide gas of 2 or less at a deposition temperature of 200°C or less. A method according to any one of the preceding claims, wherein said silicon-containing metal layer has the chemical formula MSi x where M indicates a metal and the molar ratio x of Si to M is 0.6 or less.

Inventors: OHBA TAKAYUKI, OHBA, TAKAYUKI
Applicants: FUJITSU LTD, FUJITSU LIMITED
Application year: 1988
Main classification: H01L21
IPC codes: H01L21