Method for producing ultrathin metal film and ultrathin-thin metal pattern

Abstract: A responsive film containing a responsible group occuring a chemical reaction by energy beam is formed on an insulated substrate, and energy beam is irradiated in a pattern, and part of the responsive group is selectively deactivated or activated, and only the remaining portion of the responsive group of the responsive film is coupled with a chemical substance containing metal in a later process, and an ultrafine pattern of metal film is formed.

Description: This invention relates to a metal pattern forming method capable of forming a ultrathin metal film selectively on an substrate by utilizing a chemical reaction, which may be applied in fabrication of semiconductor device or thin film of conductive material or the like. Hitherto, the method of preparing a wire pattern in production of semiconductor devices was generally the method that coating a photosensitive resin film (photoresist) which is decomposed or polymerized by irradiation with light on a substrate having a metal film deposited by evaporation or other method, exposing light in a pattern, developing, forming a resist pattern, and then etching the metal film. In such metal pattern, however, more fine pattern fabrication is being demanded today to increase integration density of the semiconductor devices or the quality of printing. Especially, for fabrication of VLSI, it is required to produce sub-micron metal pattern at high precision. In such case, although it may greatly depend on the characteristics of the resist resin, it is necessary to coat the resist film as thinly as possible generally to increase resolution, that is, in order to raise the resolution. On the other hand, in the sub-micron pattern fabrication, the wet etching method cannot be applied, and it is necessary to employ dry matching, such as ion etching, plasma etching, and sputter etching, but in order to enhance the resistance of the resist pattern to dry etching, it was generally necessary to fabricate the thick resist film, although the dry etching resistance is depend on the resist material. Therefore, to satisfy the above two contradictory requirements, it is desired that any photoresist material which is excellent in resolution if the coated film is thick, or excellent in dry etching resistance if the coat film is thin, but such material has not been known so far. It is hence primary object of this invention to present a method for producing ultrathin metal film excellent in the high resolution, uniformity and conductivity, and a method of forming said metal patterns. According to this invention, a responsive film containing a responsive group such as acetylene group or diacetylene group occuring a chemical reaction by energy beam (electron beam, ion beam, light, X-ray, etc.) is formed on an insulated substrate, and the energy beam is irradiated in a pattern to selectively deactivate or activate the responsive group in the film, and only the remaining portion of the responsive group in the responsive thin film is bonded with a chemical substance containing Ag (metal compound) in a later process, thereby a metal film formed in an ultrafine pattern. More preferably, as the chemical substance, a reagent having a group reacting with the responsive group or a denatured group from the responsive group at one end, and a responsive group similar to the said responsive group at the other end is used, and an ultrathin metal film pattern is formed by a step of bonding with the said chemical substance selectively, and a step of bonding with the chemical substance containing a metal. Furthermore, as the means for forming the responsive film, the Langmuir-Blodgett's technique or the chemical adsorption process may be employed, and by depositing the monomolecular films so that the energy beam responsive groups may be arranged on the substrate surface, the ultrafine metal pattern may be formed while the sensitivity is enhanced. In this invention, by preliminarily forming, for example, an aldehyde group (-CHO) on the surface of a monomolecular film or a build-up film, depositing and forming a molecular or atomic metal film on the monomolecular film from a water-soluble metal compound can be realized with the reducing action of this aldehyde group may be utilized. Therefore, according to this invention, it is possible to form ultrafine metal patterns easily. Brief Description of the Drawings FIG. 1 shows process sectional views of a first embodiment for explaining the method of the invention, in which a, c, e are the sectional view of substrate to explain conceptually the process, and b, d, f, g, h are magnified views of a, c, e at the molecular level in the circle-marked parts A to C; FIG. 2a is a process sectional view in a second embodiment of the invention, and b is a magnified view of part D; and FIG. 3 shows process sectional view of the second embodiment for explaining the method of the invention, in which a, c are the sectional view of substrate to explain conceptually the process, and b, d, e are magnified views of a, c at the molecular level in the parts A, B. Detailed Description of the Invention Embodiment 1 The first method of the invention is explained with FIGS. 1 and 2 as follows. For example, in this embodiment, on a semiconductor Si substrate 1 on which SiO₂ is formed, a monomolecular film 2 of is formed by chemical adsorption method on the surface of the substrate 1, using silane surface active agent, for example, CH₂ = CH - (CH₂) n - SiCℓ₃ (where n is an integer, preferably 10 to 20). A bonding of is formed on the surface of SiO₂ by dipping in a solution of, for example, 80% of n-hexane, 12% of carbon tetrachloride and 8% of chloroform dissolved at a concentration of 2.0 × 10⁻³ to 5.0 × 10⁻² mol/liter (FIG. 1a). Here, the vinyl group 4 of the silane surface active agent is arranged on the surface of the substrate (FIG. 1b), and polymerization reaction can be caused between vinyl groups to one another by electron beam irradiation, and then the electron beam 5 is irradiated in a pattern as shown in FIG. 1c. As a result, as shown in FIG. 1d, the double bonds of the vinyl groups of the portion 6 irradiated with electron beam are mutually bonded, and selectively deactivated. Furthermore, at room temperature, dipping in THF solution of diborane 1 mol/liter, and further immersing in an aqueous solution of NaOH 0.1 mol/liter and 30% H₂O₂, and hydroxyl group 7 is added to the vinyl group of the unirradiated portion (FIG. 1 e, f). Afterwards, using the aldehyde reaction of alcohol, the terminal hydroxyl group 7 is converted into an aldehyde group (-CHO) 8 (FIG. 1g), and it is dipped in an aqueous solution of a compound containing silver, for example, silver nitrate (AgNO₃). In consequence, AgNO₃ is reduced by the aldehyde group on the surface of the monomolecular film 2, and the Ag 9 is selectively deposited and formed on the monomolecular film in a pattern (FIG. 1h). That is, in the process, an atomic or molecular metal thin film is selectively formed in a submicron or more finer pattern on a monomolecular responsive film. Therefore, according to the method of this embodiment, an ultrafine wire can be formed, which is greatly effective for fabrication of electronic devices such as semiconductor device. Also, if it is desired to form the metal film on the entire surface of the substrate, the electron beam irradiation step may be skipped as may be evidently seen from the description herein. Furthermore, at this time, as silver is capable of easily forming a natural oxide film, the surface of Ag will be spontaneously covered with a natural oxide film. Therefore, when CH₂ = CH₂- (CH₂) n - SiCℓ₃ is further caused to react with the hydroxyl group on the silver surface in the same reaction as above, a bonding of is formed (FIG. 2a, b). That is, at this step, the molecule 10 of is selectively bonded in monolayer, and a thin film pattern 11 is formed. Thereafter, by similarly repeating a step of adding hydroxyl groups to the vinyl groups of the silane surface active agent formed in a pattern on the surface, a step of converting into aldehyde group, a step of depositing metal, and a step of adding the silane surface active agent, a ultrafine metal pattern having a required conductivity can be formed. Accordingly, by the method of this embodiment, a molecular structure alternately laminating the organic monomolecular film and molecular or atomic metal layer can be formed, and it is extremely advantageous for application into superelectronic device such as molecular device. In the above example, meanwhile, a substrate producing -Si-O bonding by reacting with -SiCℓ₃ of silane surface active agent, that is, an Si substrate on which SiO₂ is formed is presented, but it is also possible to use others, for example, inorganic material such as Aℓ₂O₃ and glass, and organic materials such as polyvinyl alcohol. When the substrate surface is covered with a material having a hydrophobic property, it is possible to arrange hydrophilic groups on the entire surface of the substrate by using Langmuir-Blodgett method, or it is also possible to change the substrate surface hydrophilic by O₂ plasma treatment or the like. Although the adhesion is inferior in Langmuir-Blodgett film, if the substrate surface material is hydropholic, it is possible to make the entire surface hydrophilic by stopping the build-up when the hydropholic face is formed up to the substrate side. In the event of O₂ plasma treatment, the substrate surface is oxidized, and it becomes hydrophilic. In the foregoing embodiment, the film of silicon surface active agent is prepared by adsorption reaction as a responsive thin film, but by using a reagent having the -Cℓ preliminary replaced by the -OH group (CH₂ = CH - (CH₂) n - Si(OH)₃, etc.), a responsive thin film may also be formed by Langmuir-Blodgett technique. The method of the invention may be also applied as a molecular device manufacturing technique by using a reagent containing groups for forming a π conjugate polymer or functional molecule such as - C ≡ C - C ≡ C -, - C₅H₄ -, - C₄NH₃ -, - C₄SH₂ -, -C₅H₄ - CH = CH - - C₆H₄ - S -, - C₆H₄ - O -, between CH₂ bondings of the straight chain or as side chain in the silane surface active agent presented in the above embodiment. Thus, according to the method of the invention, since the energy beam responsive thin film, on which pattern is formed, is in single or several layers of monomolecular film, it is possible to form ultrafine metal patterns. Furthermore, by performing the selective film growth reaction by the reaction between -SiCℓ₃ and -OH group, and between -CHO group and Ag ion, a highly conductive pattern can be obtained. Therefore, the method of this invention brings a great benefit in preparing ultrafine wiring pattern, especially in manufacturing wire in VLSI production. Since the Langmuir-Blodgett technique or adsorption reaction technique used in preparing of responsive film undergo as the interface reaction on the substrate surface, the process is less affected by the step on the substrate and it is very useful on a substrate having many step such as VLSI devices. This embodiment relates to an example of interface reaction between -SiCℓ₃ and -OH, and between Ag ion and -CHO, but this is not limitative as far as the process uses a similar reaction mechanism. The method of the invention is hence particularly effective for formation of ultrafine wiring pattern, especially, for improvement in the wiring process in VLSI production. Embodiment 2 The second method of the invention is explained below by reference to FIG. 3. For example, in this embodiment, on a semiconductor Si substrate 21 on which SiO₂ is formed, a monomolecular film 22 of is formed by reacting on the surface of the substrate 21 by using a silane surface active agent, such as CH ≡ CH - (CH₂) n - SiCℓ₃ (where n is an integer, preferably 10 to 20), by the chemical adsorption technique. Dipping in, for instance, a solution of 80% n-hexane, 12% carbon tetrachloride, and 8% chloroform dissolved at a concentration of 2.0 × 10⁻³ to 5.0 × 10⁻² mol/liter, a bonding 23 of is formed on the SiO₂ surface (FIG. 3b). Here, in order to stabilize the acetylene group at the terminal end of the molecule, the chemical adsorption may be carried out by using Me₃Si - C ≡ C - (CH₂) n - SiCℓ₃ as silane surface active agent, in this case, when dipped in 10% KOH aqueous solution after adsorption, the -SiMe₃ group is dissociated, and the monomolecular film 22 of can be similarly formed. Now the acetylene groups 24 of the silane surface active agent are arranged on the substrate surface (FIG. 3b), and polymerization reaction occurs to one another between the surrounding acetylene groups, when an electron beam 25 is irradiated in a pattern as shown in FIG. 3c. As a result, as shown in FIG. 3d, the triple bondings of acetylene groups 24 were changed polyacetylene bonds 28 in the portion 26 irradiated with electron beams and are selectively deactivated. In the next step, the substrate is dipped in an aqueous solution of a chemical substance containing silver, for example silver nitrate (AgNO₃). In consequence, by reaction between the acetylene groups 24 and AgNO₃ on the surface of the monomolecular film 22, Ag 27 is selectively formed on the monomolecular film 22 (FIG. 3e). In this method, an atomic or molecular metal thin film can be selectively formed on a sub-micron or ultrafiner monomolecular responsive thin film. Therefore, by the method of this embodiment, ultrafine wire can be formed, which is greatly effective for fabrication of electronic devices such as semiconductor devices. As this time, when it is desired to form a metal thin film on the entire surface of the substrate, as is evidently known, the electron beam irradiation step may be omitted. In the foregoing embodiment, the method of adsorption reaction of the silicone surface active agent is presented in relation to the responsive thin film, but it is also possible to prepare a responsive thin film by the Langmuir-Blodgett technique by using a reagent having its -Cℓ preliminarily replaced with the -OH group (CH ≡ C - (CH₂) n - Si(OH)₃, etc.). The method of this invention may be also applied as the manufacturing technique of molecular devices by using diacetylene group (- C ≡ C - C ≡ CH) instead of the acetylene group in the molecule of the silane surface active agent show in the above embodiment, or by using a reagent containing a molecule for forming a π conjugate polymer or functional molecule such as - C ≡ C - C ≡ C -, - C₆H₄ - C₄NH₃ -, - C₄SH₂ -, - C₆H₄ - CH = CH -, - C₆H₄ - S -, - C₆H₄ - O -, between the CH₂ bondings in the straight chain or as side chain. Thus, according to the method of the invention, since the energy beam responsive thin film, on which pattern is formed, is in single or several layers of monomolecular film, it is possible to form ultrafine metal patterns. Furthermore, by performing the selective film growth reaction by the reaction between - SiCℓ₃ and - OH group, between - C ≡ CH group and Ag ion, a highly conductive pattern can be obtained. Therefore, the method of this invention brings about a great benefit in preparing ultrafine wiring pattern, in particular, in forming wiring in VLSI fabrication. Since the Langmuir-Blodgett technique or adsorption reaction technique used in preparing of responsive film undergo as the interface reaction on the substrate surface, the process is less affected by the step on the substrate and it is very useful on a substrate having many step such as VLSI devices. This embodiment relates to an example of interface reaction between -SiCℓ₃ and -OH, and between Ag ion and - C ≡ CH, but this is not limitative as far as the substrate has a similar reaction mechanism. The method of the invention is hence particularly effective for formation of ultrafine wiring pattern, especially, for improvement in the wiring process in VLSI production.

Claims: A method for producing ultrathin metal film by preparing an atomic or molecular silver on a monomolecular responsive thin film by chemical reaction. A method for producing a metal ultrathin film comprising a step of depositing a monomolecular responsive thin film having an aldehyde group reacting with a silver compound on a substrate, and a step of reacting between the silver compound and the film surface and depositing silver on the responsive thin film surface. A method for pattern fabrication comprising a step of depositing a monomolecular responsive thin film containing a responsive group reacting with chemical reaction by energy beam selected from the group consisting of electron beam, ion bean and X-ray, on a substrate, a step of deactivating or activating the responsive group in a pattern by irradiation of energy beam to the responsive film in a pattern, and a step of fabricating utilizing the method of claim 1, a silver pattern by selectively reacting and depositing a silver compound to the responsive film remaining or activated portion of the responsive thin film. A method for pattern fabrication according to claim 3, wherein the monomolecular responsive thin film is formed so that the reactive groups are arranged on the substrate surface by Langmuir-Blodgett technique or adsorption reaction technique or the like. A method for pattern fabrication according to claim 3, wherein vinyl group or acetylene group is contained as the responsive group occurring chemical reaction by energy beam. An ultrathin metal film having an atomic or molecular silver deposited on a monomolecular thin film including acetylene group by chemical reaction. A method for producing metal ultrathin film comprising a step of depositing a monomolecular responsive thin film having acetylene group reacting with a silver compound on a substrate, and a step of reacting between the silver compound and the film surface and depositing the silver on the thin film surface. A method for pattern fabrication comprising a step of depositing a monomolecular responsive thin film containing acetylene group on a substrate, a step of reacting the acetylene group in a pattern by irradiation of energy beam, selected from the group consisting of electron beam, ion beam and X-ray, on the responsive thin film, and a step of fabricating utilizing the method of claim 1, a silver pattern by selectively reacting and depositing a silver compound to the remaining portion of the acetylene group on the thin film. A method for pattern fabrication according to claim 8, wherein the monomolecular thin film is deposited so that the acetylene groups are arranged on the substrate surface by Langmuir-Blodgett technique or adsorption reaction technique or the like. A method for pattern fabrication according to claim 8, wherein the acetylene group is by substituted a diacetylene group.

Inventors: MINO NORIHISA, OGAWA KAZUFUMI, TAMURA HIDEHARU, MINO, NORIHISA, OGAWA, KAZUFUMI, TAMURA, HIDEHARU
Applicants: MATSUSHITA ELECTRIC IND CO LTD, MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
Application year: 1988
Main classification: G03F7
IPC codes: G03F7