A temperature stabilized RF detector

Abstract: The circuit has a first diode (1) for detecting an RF input signal, a filter (26) for smoothing the output of the first diode, a series connection of a compensating diode (2) and a resistor (5) which is connected between the filter and ground, the compen­ sating diode having the same polarity as the first diode, the first and the compensating diodes being disposed in such a manner that their thermal environments are similar, and a bias circuit (6) for supplying the first diode with a DC bias voltage, the bias circuit being coupled to the first and the compensating diodes so that the current through the first diode is equal to the current through the compensating diode.

Description: BACKGROUND OF THE INVENTION The present invention relates to an RF (radio frequency) detector using a semiconductor diode, and more particularly to a temperature stabilized RF detector. In the RF detector, it is usual to employ a DC bias current flowing through a detecting diode in order to obtain the linear detecting characteristics over the wide dynamic range of RF inputs. Since the forward voltage of the diode depends on its operating temperature, however, such an RF detector has a disadvantage in that the detected output voltage depends on the temperature. This effect is conspicuous specifically for small RF input. An RF detector having the improved temperature characteristics for small RF input is described, for example, in a paper entitled "A TEMPERATURE STABILIZED RF DETECTOR WITH EXTENDED DYNAMIC RANGE", by R. J. Turner, 32nd IEEE Vehicular Technology Conference Record, May 23-26, 1982, pp. 231-242. The detail of this RF detector will be described hereinafter. Basically, the Turner's detector cancels the change in detected output voltage due to the temperature variations by connecting a temperature stabilizing diode to the detecting diode so that their temperature environments are identical. As a result, the DC bias variations in the detecting diode due to temperature variations can be compensated. However, since the detecting current flows only through the detecting diode to which the RF signal is applied, the currents flowing through the detecting diode and the temperature stabilizing diode become different from each other. Therefore, the forward voltages across both diodes inevitably become different from each other. Thus, complete temperature stabilization cannot be attained resorting to the Turner's detector. In the specification of UK Patent No: 1274166, which was published on May 17, 1992, and which is an English language equivalent of French Patent No: 2077920, there is proposed a diode detector circuit with both a detector diode and compensating diode, the compensating diode being included in a loop circuit with an operational amplifier and the diodes being so biased that they both pass equal currents in the absence of any input signal to the amplifier. In Patent Abstracts of Japan Vol. 7200 (E-196) an abstract of Japanese Patent Application No: 56198193, which was published under No: 58099009 on June 13, 1983, describes a proposal for an amplitude detector which employs parallel connected diodes and an amplifier which produces a temperature dependent voltage which is applied to a detector diode. An abstract of Japanese Patent Application No: 56039649, which was published under No: 57154912, appeared in Patent Abstracts of Japan Vol. 6254 (E-148) and described a high frequency detector using series connected diodes. None of the arrangements described in these publications teaches or even hints of the arrangement which is the subject of the present application. An embodiment of the invention will now be described, by way of example, together with a prior art arrangement, with reference to the accompanying drawings, in which: Figure 1 is a schematic diagram of an RF detector circuit according to the present invention; Figure 2 is a schematic diagram showing the specific circuit of Figure 1; Figure 3 a schematic diagram of a prior art RF detector circuit; Fig. 4 is a diagram showing the idealized I-V characteristics of a diode at various operating temperatures; and Fig. 5 is a diagram showing the real I-V characteristics of a diode at various operating temperatures. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS To facilitate the understanding of the present invention, the RF detector circuit described in the aforementioned article by Turner will first be explained referring to Fig. 3. In Fig. 3, an RF voltage at an input terminal 3 is detected by a detecting diode 1, smoothed by a filter composed of capacitors 9 and 10 and a choke coil 11, and finally supplied as an output V out1 to a terminal 4. The bias voltage V B is applied to the detecting diode 1 via a resistor 15 and an RF stopping circuit composed of a choke coil 7 and a capacitor 8. A voltage V out2 at a terminal 22 is the output of a subtracter 21, which is the difference between the output voltage V out1 and the output voltage V REF of a circuit composed of a diode 13, resistors 16 and 20, and capacitors 18 and 19, that is, V out2 = V out1 - V REF (1) Now, the resistance values of the resistors 15, 16, 17 and 20 will be denoted by R₁₅, R₁₆, R₁₇ and R₂₀, respectively. The voltage across the resistor 17, that is, the voltage V out1 at the terminal 4, is the sum of a DC bias voltage divided by a voltage divider composed of the resistors 15 and 17, and the detected voltage V DET , V out1 = (V B - V D1 )(R₁₇/(R₁₅ + R₁₇)) + V DET (2) where V D1 denotes the forward voltage of the diode 1. On the other hand, the voltage V REF across the resistor 20 is given by, V REF = (V B - V D13 )(R₂₀/(R₁₆ + R₂₀)) (3) where V D13 denotes the forward voltage of the diode 13. If R₁₅ = R₁₆ and R₁₇ = R₂₀, the following expression is obtained from equations (1), (2) and (3), V OUT2 = V OUT1 - V REF = (V D1 - V D13 )(R₁₇/(R₁₅ R₁₇)) + V DET (4) If the diodes having the same temperature characteristics are used as diodes 1 and 13 in the identical temperature environment, the following relation holds, V D1 = V D13 (5) with the result that V out2 = V DET (6) Therefore, the use of the diode 13 can eliminate the change in the DC bias due to temperature variations and thus suppress the corresponding change in the final detected voltage. In the aforementioned detector circuit by Turner, it is assumed that the forward voltage of a diode depends only on its operating temperature and not on the current flowing therethrough, as is shown in Fig. 4. Under this assumption, the temperature stabilization can completely be realized by means of the circuit in Fig. 3. However, the real diode does not have the I-V characteristics shown in Fig. 4 but the one shown in Fig. 5. In other words, the forward voltage V d of a diode is given by V d = V d (i,T) , where T denotes the operating temperature of the diode. Assuming that the operating temperature T is constant, a constant current i D13 flows through the diode 13 (Fig. 3), which current is equal to the current i D1 through the diode 1 if the RF input signal is absent. Otherwise, the detected current flows through the diode 1 in addition to the current i D13 , that is, i D1 = i D13 + i DET (7) where i DET denotes the DC component of the ripple current produced by the detection. As is obvious from equation (7), i D1 ≠ i D13 , so that V d (i D1 , T) ≠ V d (i D13 , T) Thus, the assumption of equation (5) does not hold, which means that the temperature stabilization is incomplete. If the values of the resistors 15, 16, 17 and 20 are properly selected, the relation i D1 = i D13 holds only for a certain RF input level. However, it does not hold for other RF input levels, causing incomplete temperature stabilization again. Now, the present invention will be explained with reference to Fig. 1. In Fig. 1, an RF detector circuit comprises a detecting diode 1 and a filter 26 composed of capacitors 9 and 10 and a choke coil 11, by which an RF signal applied at a terminal 3 is detected and smoothed to be supplied to a terminal 4. An RF stopping circuit 23 is composed of a choke coil 7 and a capacitor 8. The series connection of a resistor 5 and a compensating diode 2 is connected between the terminal 4 and ground. A bias voltage V B1 is produced by summing up a voltage at the connection point of the resistor 5 and the diode 2, and a bias voltage V B applied at a terminal 12 by means of an adder 6. This bias voltage V B1 is applied to the detecting diode 1 through RF stopping circuit 23. The detecting diode 1 and the compensating diode 2 have the same polarity with respect to the current loop of the bias voltage V B1 applied to the diode 1. Moreover, the same current is made to flow through both diodes. In other words, the current i D1 through the diode 1 is always equal to the current i D2 through the diode 2. Therefore, if the diodes 1 and 2 are thermally coupled so as to be suffered from the same temperature effect, the forward voltages of the diodes 1 and 2 become V D1 = V d (i D1 , T) = V D2 = V d (i D2 , T) Thus, an output voltage V out at the terminal 4 is given by, V out = V B1 - V D1 + V DET where V DET denotes the detected voltage. Since V B1 = V B + V D2 = V B + V D1 the output voltage becomes V out = V B + V D1 - V D1 + V DET = V B + V DET (8) Consequently, the detected output voltage V out is not affected by the variation in the forward voltage of the diode for any RF input signal level and any operating temperature. The voltage V B1 and the value of the resistor 5 are determined so that the linear operation of the diode is assumed and that the dynamic range of the output voltage V out lies in the desired range. In the circuit shown in Fig. 2, the adder 6 in the circuit of Fig. 1 is realized by a circuit using the operational amplifiers. An operational amplifier 24 is a high input-impedance inverting adder, while an operational amplifier 25 is a low output-impedance inverter acting as a low-impedance voltage source. If all the values of the resistors determining the gain of the amplifiers 24 and 25 are chosen to be identically R, it is obvious that the result of equation (8) can be obtained. It is preferable that an external circuit connected to the terminal 4 is a voltage-driven circuit having substantially infinite input-impedance. In practice, to the terminal 4 may be connected an external circuit whose input impedance is large enough not to substantially flow a current from the RF detector to the external circuit. In the above explanation, the RF stopping circuit 23 and the filter 26 for the detected voltage in Fig. 1 are not limited by those shown. Any circuit can be used if the currents flowing through the diodes 1 and 2 are mutually equal with respect to the DC loop of the bias voltage V B1 . Although the bias voltage V B1 in Figs. 1 and 2 is assumed to be positive, the polarities of the diodes 1 and 2 should be reversed if the negative bias voltage is used. As is explained above, the detector circuit according to the present invention comprises the serial connection of the compensating diode and a resistor connected between the detecting diode and ground so that the same DC current flows through the detecting diode and the compensating diode. The detector circuit supplies the detecting diode through an RF stopping circuit with a sum of the voltage at the connection point of the serial connection and the predetermined DC voltage. As a result, the final detected voltage is not affected by the diode forward voltage. Accordingly, the effect due to the operating temperature variations is excluded and the extremely precise RF detection can be attained for any RF input signal level.

Claims: A temperature stabilized RF detector circuit including a detecting diode (1) for detecting an RF signal, and a compensating diode (2) for compensating for the effects of temperature variation upon the detecting diode (1), characterized in that the circuit includes a series connection of the compensating diode (2) and a resistor (5), the series connection being arranged between the detecting diode (1) and ground in such a way that the same DC current flows through the detecting diode (1) and the compensating diode (2) in the same direction, the sum of the voltage (VD2) appearing at the junction between the resistor (5) and the compensating diode (2) and a predetermined DC voltage (VB) being applied as a bias voltage to the detecting diode (1) via an RF stopping circuit (23). A temperature stabilized RF detector circuit as claimed in claim 1, wherein the RF input signal is fed to the anode of the detecting diode (1). A temperature stabilized RF detector circuit as claimed in claim 1, wherein the RF input signal is fed to the cathode of the detecting diode (1). A temperature stabilized RF detector circuit as claimed in claim 1, wherein an RF detected output obtained between the detecting diode (1) and the resistor (5) is supplied to an external circuit having a substantially infinite input impedance. A method for stabilizing the temperature variation of a detected output, including the steps of detecting an RF signal to produce the detected output by means of a detecting diode (1) and compensating the temperature variation of the detecting diode (1) by means of a compensating diode (2), characterized in that a resistor (5) is connected in series with the compensating diode (2), the series connection of the resistor (6) and the compensating diode (2) being arranged between the detecting diode (2) and ground so that the same DC current flows through both the detecting diode (1) and the compensating diode (2) in the same direction and in that the method includes the step of applying the sum of the voltage (VD2) appearing at the connection point of the resistor (5) and the compensating diode (2) and a predetermined DC voltage (VB) to the detecting diode (1) via an RF stopping circuit (23). A method as claimed in claim 5, further including the steps of supplying to a circuit having a substantially infinite input impedance the detected output detected by the detecting diode (1) after filtering the RF components therefrom, and applying the filtered detected output to the compensating diode (2) via a resistor (5).

Inventors: TAMURA YOSHIHARU C O NEC CORPO, TAMURA, YOSHIHARU C/O NEC CORPORATION
Applicants: NIPPON ELECTRIC CO, NEC CORPORATION
Application year: 1988
Main classification: H03D1
IPC codes: H03D1