Light receiving member having a multilayered light receiving layer composed of a lower layer made of aluminum-containing inorganic material and an upper layer made of non-single-crystal silicon material

Abstract: There is provided an improved light receiving member for electrophotography which is made up of an aluminum support and a multilayered light receiving layer exhibiting photoconductivity formed on said aluminum support, wherein said multilayered light receiving layer consists of a lower layer in contact with said support and an upper layer, said lower layer being made of an inorganic material containing at least aluminum atoms (Al), silicon atoms (Si), and hydrogen atoms (H), and having a part in which said aluminum atoms (Al), silicon atoms (Si), and hydrogen atoms (H) are unevenly distributed across the layer thickness, said upper layer being made of a non-single-crystal material composed of silicon atoms (Si) as the matrix and at least either of hydrogen atoms (H) or halogen atoms (X), and containing at least either of germanium atoms or tin atoms in a layer region in contact with said lower layer. The light receiving member for electrophotography exhibits outstand­ ing electric characteristics, optical characteristics, photoconductive characteristics, durability, image charac­ teristics, and adaptability to use environments.

Description: This invention concerns a light receiving member which is sensitive to electromagnetic waves such as light (which herein includes ultra-violet rays, visible rays, infa-red rays, X-rays and gamma rays. It also concerns an electrophotographic process in which an electrostatic image is formed. A light receiving member in which the receiving layer is composed of a lower layer made of an inorganic material containing at least aluminium atoms, silicon atoms and hydrogen atoms, and an upper layer made of non-single-crystal silicon material is particularly suitable for imaging by coherent light such as a laser beam. A light receiving member used for image formation has a light receiving layer made of a photoconductive material. The characteristics which this material is required to have include high sensitivity, high S/N ratio [ratio of light current (Ip) to dark current (Id)], an absorption spectrum matching the spectral characteristics of the electromagnetic waves used to irradiate the member, rapid optical response, appropriate dark resistance and non-toxicity to the human body at the time of use. In electrophotographic apparatus used as an office machine, non-toxicity of the light receiving member at the time of use is an important requirement. Amorphous silicon (hereinafter referred to us A-Si) is a photoconductive material which is at present attracting attention. The use of A-Si for a light receiving member for electrophotography is disclosed in, for example, German laid open patent Nos 2746967 and 2855718. Figure 2 is a schematic sectional view showing the layer structure of a conventional light receiving member for electrophotography. There are shown an aluminium support (201) and a photosensitive layer of A-Si (202). This type of electrophotographic light receiving member is usually produced by forming the A-Si photosensitive layer (202) on the aluminium support (201) which is heated to 50 to 350°C by deposition, the hot CVD process, the plasma CVD process, or sputtering. Unfortunately this electrophotographic light receiving member suffers from the disadvantage that the sensitive A-Si layer (202) is liable to crack or peel off during cooling after the film forming step because the coefficient of thermal expansion of aluminium is nearly ten times that of A-Si. To solve this problem there was proposed a photosensitive electrophotographic body which is composed of an aluminium support, and intermediate layer containing at least aluminium, and a sensitive layer of A-Si (Japanese laid open patent No 28162/1984). The intermediate layer in which aluminium is required to be present relieves the stress arising from the difference in the thermal expansion coefficient between the aluminium support and the A-Si sensitive layer, thereby reducing the tendency for the A-Si sensitive layer to crack and peel. A conventional electrophotographic light receiving member in which a light receiving layer is made of A-Si has improved electrical, optical and photoconductive characteristics (such as dark resistance, photosensitivity and response to light) adaptability to different environments of use, stability with time, and durability. Nevertheless there is still room for improvement in the overall performance of this light receiving member. In order to improve the image characteristics, a number of improvements have recently been made in the optical exposure unit, development unit and transfer unit of electrophotographic apparatus. This in turn has required the electrophotographic light receiving member to be further improved in its image characteristics. With improvement in image resolution, users have begun to demand further improvements such as the reduction of unevenness (so called "coarse image") in a region where the image density changes delicately, and reduction of image defects (so called "dots") which appear as black or white spots, and especially the reduction of very small "dots" which in the past have attracted no attention. A further disadvantage of a conventional electrophotographic light receiving member is its low mechanical strength. When the member comes into contact with foreign matter which has entered the electrophotographic apparatus, or when it comes into contact with the main body or with tools while the electrophotographic apparatus is being serviced, mechanical shocks and pressure can give rise to image defects or cause the A-Si film to peel off. The durability of the electrophotographic light receiving member is thereby reduced. A further disadvantage of a conventional electrophotographic light receiving member is that the A-Si film is prone to cracking and peeling on account of stresses which arise due to differences in the coefficient of thermal expansion between the A-Si film and the aluminium support. This gives rise to low production yields. In the above mentioned circumstances, it is desirable to provide a light receiving member in which at least some of the above mentioned problems are reduced. According to the present invention, an improved light receiving member for electrophotography is made up of an aluminum support and a multilayered light receiving layer exhibiting photoconductivity formed on said aluminum support, wherein said multilayered light receiving layer consists of a lower layer in contact with said support and an upper layer, said lower layer being made of an inorganic material containing at least aluminum atoms (Al), silicon atoms (Si), and hydrogen atoms (H) ("AlSiH" for short hereinafter), and having a part in which said aluminum atoms (Al), silicon atoms (Si), and hydrogen atoms (H) are unevenly distributed across the layer thickness, said upper layer being made of a non-single-crystal material composed of silicon atoms (Si) as the matrix and at least either of hydrogen atoms (H) or halogen atoms (X) ("Non-Si(H,X)" for short hereinafter), and having a layer region in contact with said lower layer, said layer region containing at least either of germanium atoms (Ge) or tin atoms (Sn). The light receiving member for electrophotography in the present invention has the multilayered structure as mentioned above. Therefore, it is less subject to or free from the above-mentioned disadvantages, and it can exhibit outstanding electric characteristics, optical characteristics, photoconductive characteristics, durability, image characteristics, and adaptability to use environments. As mentioned above, the lower layer is made such that the aluminum atoms and silicon atoms, and especially the hydrogen atoms, are unevenly distributed across the layer thickness. This structure improves the injection of electric charge (photocarrier) across the aluminum support and the upper layer. In addition, this structure joins the constituent elements of the aluminum support to the constituent elements of the upper layer gradually in terms of composition and constitution. This leads to the improvement of image characteristics relating to coarse image and dots. Therefore, the light receiving member permits the stable reproduction of images of high quality with a sharp half tone and a high resolving power. The above-mentioned multilayered structure prevents the image defects and the peeling of the non-Si(H,X) film which occurs as the result of impactive mechanical pressure applied to the light receiving member for electrophotography. In addition, the multilayered structure relieves the stress arising from the difference between the aluminum support and the non-Si(H,X) film in the coefficient of thermal expansion and also prevents the occurrence of cracks and peeling in the non-Si(H,X) film. All this contributes to improved durability and increased yields in production. According to the present invention, the upper layer has a layer region in contact with the lower layer, said layer region containing at least either of germanium atoms (Ge) or tin atoms (Sn). This layer region improves the adhesion of the upper layer to the lower layer, prevents the occurrence of defective images and the peeling of the non-Si(H,X) film, and improves the durability. In addition, this layer region efficiently absorbs lights of long wavelength which are not completely absorbed by the upper layer and the lower layer. This suppresses the interference arising from the reflection at the interface between the upper layer and the lower layer or the reflection at the surface of the support, in the case where a light of long wavelength such as semiconductor laser is used as the light source for image exposure in the electrophotographic apparatus. According to the present invention, the lower layer of the light receiving member may further contain atoms to control the image ("atoms (Mc)" for short hereinafter). The incorporation of atoms (Mc) to control the image quality improves the injection of electric charge (photocarrier) across the aluminum support and the upper layer and also improves the transferability of electric charge (photocarrier) in the lower layer. Thus the light receiving member permits the stable reproduction of images of high quality with a sharp half tone and a high resolving power. According to the present invention, the lower layer of the light receiving member may further contain atoms to control the durability ("atoms (CNOc)" for short hereinafter). The incorporation of atoms (CNOc) greatly improves the resistance to impactive mechanical pressure applied to the light receiving member for electrophotography. In addition, it prevents the image defects and the peeling of the non-Si(H,X) film, relieves the stress arising from the difference between the aluminum support and the non-Si(H,X) film in the coefficient of thermal expansion, and prevents the occurrence of cracks and peeling in the non-Si(H,X) film. All this contributes to improved durability and increased yields in production. According to the present invention, the lower layer of the light receiving member may further contain halogen atoms (X). The incorporation of halogen atoms (X) stabilises the constitution and structure of the layer by forming bands with silicon and aluminum atoms whose valence would otherwise be unsaturated. This coupled with the effect produced by the distribution of silicon atoms (Si), aluminum atoms (Al), and hydrogen atoms (H) mentioned above, greatly improves the image characteristics relating to coarse image and dots. According to the present invention, the lower layer of the light receiving member may further contain at least either of germanium atoms (Ge) or tin atoms (Sn). The incorporation of at least either of germanium atoms (Ge) or tin atoms (Sn) improves the injection of electric charge (photocarrier) across the aluminum support and the upper layer, the adhesion of the lower layer to the aluminum support, and the transferability of electric charge (photocarrier) in the lower layer. This leads to a distinct improvement in image characteristics and durability. According to the present invention, the lower layer of the light receiving member may further contain at least one kind of atoms selected from alkali metal atoms, alkaline earth metal atoms, and transition metal atoms, ("atoms (Me)" for short hereinafter). The incorporation of at least one kind of atoms selected from alkali metal atoms, alkaline earth metal atoms, and transition metal atoms permits more dispersion of the hydrogen atoms or halogen atoms contained in the lower layer (the reason for this is not yet fully elucidated) and also reduces the structure relaxation of the lower layer which occurs with lapse of time. This leads to reduced liability of cracking and peeling even after use for a long period of time. The incorporation of at least one kind of the above-mentioned metal atoms improves the injection of electric charge (photocarrier) across the aluminum support and the upper layer, the adhesion of the lower layer to the aluminum support, and the transferability of electric charge (photocarrier) in the lower layer. This leads to a distinct improvement in image characteristics and durability, which in turn leads to the stable production and quality. In the meantime, the above-mentioned Japanese Patent Laid-open No. 28162/1984 mentions the layer containing aluminum atoms and silicon atoms unevenly across the layer thickness and also mentions the layer containing hydrogen atoms. However, it does not mention how the layer contains hydrogen atoms. Therefore, it is distinctly different from the present invention. Fig. 1 is a schematic diagram illustrating the layer structure of the light receiving member for electrophotography pertaining to the present invention. Fig. 2 is a schematic diagram illustrating the layer structure of the conventional light receiving member for electrophotography. Figs. 3 to 8 are diagrams illustrating the distribution of aluminum atoms (Al) contained in the lower layer, and also illustrating the distribution of atoms (Mc) to control image quality, and/or atoms (CNOc) to control durability, and/or halogen atoms (X), and/or germanium atoms (Ge), and/or tin atoms (Sn), and/or at least one kind of atoms selected from alkali metal atoms, alkaline earth metal atoms, and transition metal atoms, which are optionally contained in the lower layer. Figs. 9 to 16 are diagrams illustrating the distribution of silicon atoms (Si) and hydrogen atoms (H) contained in the lower layer, and also illustrating the distribution of atoms (Mc) to control image quality, and/or atoms (CNOc) to control durability, and/or halogen atoms (X), and/or germanium atoms (Ge), and/or tin atoms (Sn), and/or at least one kind of atoms selected from alkali metal atoms, alkaline earth metal atoms, and transition metal atoms, which are optionally contained in the lower layer. Figs. 17 to 36 are diagrams illustrating the distribution of atoms (M) to control conductivity, carbon atoms (C), and/or nitrogen atoms (N), and/or oxygen atoms (O), and/or germanium atoms (Ge), and/or tin atoms (Sn), and/or alkali metal atoms, and/or alkaline earth metal atoms, and/or transition metal atoms, which are contained in the upper layer. Fig. 37 is a schematic diagram illustrating an apparatus to form the light receiving layer of the light receiving member for electrophotography by RF glow discharge method according to the present invention. Fig. 38 is an enlarged sectional view of the aluminum support having a V-shape rugged surface on which is formed the light receiving member for electrophotography according to the present invention. Fig. 39 is an enlarged sectional view of the aluminum support having a dimpled surface on which is formed the light receiving member for electrophotography according to the present invention. Fig. 40 is a schematic diagram of the depositing apparatus to form the light receiving layer of the light receiving member for electrophotography by microwave glow discharge method according to the present invention. Fig. 41 is a schematic diagram of the apparatus to form the light receiving layer of the light receiving member for electrophotography by microwave glow discharge method according to the present invention. Fig. 42 is a schematic diagram of the apparatus to form the light receiving layer of the light receiving member for electrophotography by RF sputtering method according to the present invention. Figs. 43 (a) to 43(d) show the distribution of the content of the atoms across the layer thickness in Example 351, Comparative Example 8, Example 358, and Example 359, respectively, of the present invention. The light receiving member for electrophotography pertaining to the present invention will be described in more detail with reference to the drawings. Fig. 1 is a schematic diagram showing a typical example of the layer structure suitable for the light receiving member for electrophotography pertaining to the present invention. The light receiving member 100 for electrophotography as shown in Fig. 1 comprises an aluminum support 101 for the light receiving layer 102 of layered structure. The light receiving layer 102 is made up of the lower layer 103 of AlSiH and the upper layer 104 of non-Si(H,X). The lower layer 103 has a part in which the above-mentioned aluminum atoms and silicon atoms are unevenly distributed across the layer thickness. The upper layer 104 has a layer region in contact with said layer layer, said layer region containing at least either of germanium atoms (Ge) or tin atoms (Sn). The upper layer 104 has the free surface 105 . Support The aluminum support 101 used in the present invention is made of an aluminum alloy. The aluminum alloy is not specifically limited in base metal and alloy components. The kind and composition of the components may be selected as desired. Therefore, the aluminum alloy used in the present invention may be selected from pure aluminum, Al-Cu alloy, Al-Mn alloy, Al-Si ally, Al-Mg alloy, Al-Mg-Si alloy, Al-Zn-Mg alloy, Al-Cu-Mg alloy (duralumin and super duralumin), Al-Cu-Si alloy (lautal), Al-Cu-Ni-Mg alloy (Y-alloy and RR alloy), and aluminum powder sintered body (SAP) which are standardized or registered as a malleable material, castable material, or die casting material in the Japanese Industrial Standards (JIS), AA Standards, BS Standards, DIN Standards, and International Alloy Registration. The composition of the aluminum alloy used in the invention is exemplified in the following. The scope of the invention is not restricted to the examples. Pure aluminum conforming to JIS-1100 which is composed of less than 1.0 wt% of Si and Fe, 0.05∼0.20 wt% of Cu, less than 0.05 wt% of Mn, less than 0.10 wt% of Zn, and more than 99.00 wt% of Al. Al-Cu-Mg alloy conforming to JIS-2017 which is composed of 0.05∼0.20 wt% of Si, less than 0.7 wt% of Fe, 3.5∼4.5 wt% of Cu, 0.40∼1.0 wt% of Mn, 0.40∼0.8 wt% of Mg, less than 0.25 wt% of Zn, and less than 0.10 wt% of Cr, with the remainder being Al. Al-Mn alloy conforming to JIS-3003 which is composed of less than 0.6 wt% of Si, less than 0.7 wt% of Fe, 0.05∼0.20 wt% of Cu, 1.0∼1.5 wt% of Mn, and less than 0.10 wt% of Zn, with the remainder being Al. Al-Si alloy conforming to JIS-4032 which is composed of 11.0∼13.5 wt% of Si, less than 1.0 wt% of Fe, 0.50∼1.3 wt% of Cu, 0.8∼1.3 wt% of Mg, less than 0.25 wt% of Zn, less than 0.10 wt% of Cr, and 0.5∼1.3 wt% of Ni, with the remainder being Al. Al-Mg alloy conforming to JIS-5086 which is composed of less than 0.40 wt% of Si, less than 0.50 wt% of Fe, less than 0.10 wt% of Cu, 0.20∼0.7 wt% of Mn, 3.5∼4.5 wt% of Mg, less than 0.25 wt% of Zn, 0.05∼ 0.25 wt% of Cr, and less than 0.15 wt% of Ti, with the remainder being Al. An alloy composed of less than 0.50 wt% of Si, less than 0.25 wt% of Fe, 0.04∼0.20 wt% of Cu, 0.01∼1.0 wt% of Mn, 0.5∼10 wt% of Mg, 0.03∼0.25 wt% of Zn, 0.05∼0.50 wt% of Cr, 0.05∼0.20 wt% of Ti or Tr, and less than 1.0 cc of H₂ per 100 g of Al, with the remainder being Al. An alloy composed of less than 0.12 wt% of Si, less than 0.15% of Fe, less than 0.30 wt% of Mn, 0.5∼5.5 wt% of Mg, 0.01∼1.0 wt% of Zn, less than 0.20 wt% of Cr, and 0.01∼0.25 wt% of Zr, with the remainder being Al. Al-Mg-Si alloy conforming to JIS-6063 which is composed of 0.20∼0.6 wt% of Si, less than 0.35 wt% of Fe, less than 0.10 wt% of Cu, less than 0.10 wt% of Mn, 0.45∼0.9 wt% of MgO, less than 0.10 wt% of Zn, less than 0.10 wt% of Cr, and less than 0.10 wt% of Ti, with the remainder being Al. Al-Zn-Mg alloy conforming to JIS-7N01 which is composed of less than 0.30 wt% of Si, less than 0.35 wt% of Fe, less than 0.20 wt% of Cu, 0.20∼0.7 wt% of Mn, 1.0∼2.0 wt% of Mg, 4.0∼5.0 wt% of Zn, less than 0.30 wt% of Cr, less than 0.20 wt% of Ti, less than 0.25 wt% of Zr, and less than 0.10 wt% of V, with the remainder being Al. In this invention, an aluminum alloy of proper composition should be selected in consideration of mechanical strength, corrosion resistance, workability, heat resistance, and dimensional accuracy which are required according to specific uses. For example, where precision working with mirror finish is required, an aluminum alloy containing magnesium and/or copper is desirable because of its free-cutting performance. According to the present invention, the aluminum support 101 can be in the form of cylinder or flat endless belt with a smooth or irregular surface. The thickness of the support should be properly determined so that the light receiving member for electrophotography can be formed as desired. In the case where the light receiving member for electrophotography is required to be flexible, it can be made as thin as possible within limits not harmful to the performance of the support. Usually the thickness should be greater than 10 µm for the convenience of production and handling and for the reason of mechanical strength. In the case where the image recording is accomplished by the aid of coherent light such as laser beams, the aluminum support may be provided with an irregular surface to eliminate defective images caused by interference fringes. The irregular surface on the support may be produced by any known method disclosed in Japanese Patent Laid-open Nos. 168156/1985, 178457/1985, and 225854/1985. The support may also be provided with an irregular surface composed of a plurality of spherical dents in order to eliminate defective images caused by interference fringes which occur when coherent light such as laser light is used. In this case, the surface of the support has irregularities smaller than the resolving power required for the light receiving member for electrophotography, and the irregularities are composed of a plurality of dents. The irregularities composed of a plurality of spherical dents can be formed on the surface of the support according to the known method disclosed in Japanese Patent Laid-Open No. 231561/1986. Lower layer According to the present invention, the lower layer is made of an inorganic material which is composed of at least aluminum atoms (Al), silicon atoms (Si), and hydrogen atoms (H). It may further contain atoms (Mc) to control image quality, atoms (CNOc) to control durability, halogen atoms (X), germanium atoms (Ge), and/or tin atoms (Sn), and at least one kind of atoms (Me) selected from the group consisting of alkali metal atoms, alkaline earth metal atoms, and transition metal atoms. The lower layer contains aluminum atoms (Al), silicon atoms, (Si), and hydrogen atoms (H) which are distributed evenly throughout the layer; but it has a part in which their distribution is uneven across the layer thickness. Their distribution should be uniform in a plane parallel to the surface of the support so that uniform characteristics are ensured in the same plane. According to a preferred embodiment, the lower layer contains aluminum atoms (Al), silicon atoms (Si), and hydrogen atoms (H) which are distributed evenly and continuously throughout the layer, with the aluminum atoms (Al) being distributed such that their concentration gradually decreases across the layer thickness toward the upper layer from the support, with the silicon atoms (Si) and hydrogen atoms (H) being distributed such that their concentration gradually increases across the layer thickness toward the upper layer from the support. This distribution of atoms makes the aluminum support and the lower layer compatible with each other and also makes the lower layer and the upper layer compatible with each other. According to the present invention, the light receiving member for electrophotography is characterized in that the lower layer contains aluminum atoms (Al), silicon atoms (Si), and hydrogen atoms (H) which are specifically distributed across the layer thickness as mentioned above but are evenly distributed in the plane parallel to the surface of the support. The lower layer may further contain atoms (Mc) to control image quality, atoms (CNOc) to control durability, halogen atoms (X), germanium atoms (Ge), and/or tin atoms (Sn), and at least one kind of atoms (Me) selected from the group consisting of alkali metal atoms, alkaline earth metal atoms, and transition metal atoms, which are evenly distributed throughout the entire layer or unevenly distributed across the layer thickness in a specific part. In either case, their distribution should be uniform in a plane parallel to the surface of the support so that uniform characteristics are ensured in the same plane. Fig. 3 to 8 show the typical examples of the distribution of aluminum atoms (Al) and optionally added atoms in the lower layer of the light receiving member for electrophotography in the present invention. (The aluminum atoms (Al) and the optionally added atoms are collectively referred to as "atoms (AM)" hereinafter.) In Figs. 3 to 8, the abscissa represents the concentration (C) of atoms (AM) and the ordinate represents the thickness of the lower layer. (The aluminum atoms (Al) and the optionally added atoms may be the same or different in their distribution across the layer thickness.) The ordinate represents the thickness of the lower layer, with t B representing the position of the end (adjacent to the support) of the lower layer, with t T representing the position of the end (adjacent to the upper layer) of the lower layer. In other words, the lower layer containing atoms (AM) is formed from the t B side toward the t T side. Fig. 3 shows a first typical example of the distribution of atoms (AM) across layer thickness in the lower layer. The distribution shown in Fig. 3 is such that the concentration (C) of atoms (AM) remains constant at C₃₁ between position t B and position t₃₁ and linearly decreases from C₃₁ to C₃₂ between position t₃₁ and position t T . The distribution shown in Fig. 4 is such that the concentration (C) of atoms (AM) linearly decreases from C₄₁ to C₄₂ between position t B and position t T . The distribution shown in Fig. 5 is such that the concentration (C) of atoms (AM) gradually and continuously decreases from C₅₁ to C₅₂ between position t B and position t T . The distribution shown in Fig. 6 is such that the concentration (C) of atoms (AM) remains constant at C₆₁ between position t B and position t₆₁ and linearly decreases from C₆₂ to C₆₃ between t₆₁ and position t T . The distribution shown in Fig. 7 is such that the concentration (C) of atoms (AM) remains constant at C₇₁ between position t B and position t₇₁ and decreases gradually and continuously from C₇₂ to C₇₃ between position t₇₁ and position t T . The distribution shown in Fig. 8 is such that the concentration (C) of atoms (AM) decreases gradually and continuously from C₈₁ to C₈₂ between position t B and position t T . The atoms (AM) in the lower layer are distributed across the layer thickness as shown in Figs. 3 to 8 with reference to several typical examples. In a preferred embodiment, the lower layer contains silicon atoms (Si) and hydrogen atoms (H) and atoms (AM) in a high concentration of C in the part adjacent to the support, and also contains atoms (AM) in a much lower concentration at the interface t T . In such a case, the distribution across the layer thickness should be made such that the maximum concentration C max is 10 atom% or above, preferably 30 atom% or above, and most desirably 50 atom% or above. According to the present invention, the amount of atoms (AM) in the lower layer should be properly established so that the object of the invention is effectively achieved. It is 5∼95 atom%, preferably 10∼90 atom%, and most desirably 20∼80 atom%. Figs. 9 to 16 shows the typical examples of the across-the-layer-thickness distribution of silicon atoms (Si), hydrogen atoms (H), and the above-mentioned optional atoms contained in the lower layer of the light receiving member for electrophotography in the present invention. In Figs. 9 to 16, the abscissa represents the concentration (C) of silicon atoms (Si), hydrogen atoms (H), and optionally contained atoms and the ordinate represents the thickness of the lower layer. (The silicon atoms (Si), hydrogen atoms (H), and optionally contained atoms will be collectively referred to as "atoms (SHM)" hereinafter.) The silicon atoms (Si), hydrogen atoms (H), and optionally contained atoms may be the same or different in their distribution across the layer thickness. t B on the ordinate represents the end of the lower layer adjacent to the support and t T on the ordinate represents the end of the lower layer adjacent to the upper layer. In other words, the lower layer containing atoms (SHM) is formed from the t B side toward the t T side. Fig. 9 shows a first typical example of the distribution of atoms (SHM) across the layer thickness in the lower layer. The distribution shown in Fig. 9 is such that the concentration (C) of atoms (SHM) linearly increases from C₉₁ to C₉₂ between position t B and position t₉₁ and remains constant at C₉₂ between position t₉₁ and position t T . The distribution shown in Fig. 10 is such that the concentration (C) of atoms (SHM) linearly increases from C₁₀₁ to C₁₀₂ between position t B and position t B . The distribution shown in Fig. 11 is such that the concentration (C) of atoms (SHM) gradually and continuously increases from C₁₁₁ to C₁₁₂ between position t B and position t T . The distribution shown in Fig. 12 is such that the concentration (C) of atoms (SHM) linearly increases from C₁₂₁ to C₁₂₂ between position t B and position t₁₂₁ and remains constant at C₁₂₃ between position t₁₂₁ and position t T . The distribution shown in Fig. 13 is such that the concentration (C) of atoms (SHM) gradually and continuously increases from C₁₃₁ to C₁₃₂ between position t B and position t₁₃₁ and remains constant at C₁₃₃ between position t₁₃₁ and position t T . The distribution shown in Fig. 14 is such that the concentration (C) of atoms (SHM) gradually and continuously increases from C₁₄₁ to C₁₄₂ between position t B and position t T . The distribution shown in Fig. 15 is such that the concentration (C) of atoms (SHM) gradually increases from substantially zero to C₁₅₁ between position t B and position t₁₅₁ and remains constant at C₁₅₂ between position t₁₅₁ and position t T . ("Substantially zero" means that the amount is lower than the detection limit. The same shall apply hereinafter.) The distribution shown in Fig. 16 is such that the concentration (C) of atoms (SHM) gradually increases from substantially zero to C₁₆₁ between position t B and position t T . The silicon atoms (Si) and hydrogen atoms (H) in the lower layer are distributed across the layer thickness as shown in Figs. 9 to 16 with reference to several typical examples. In a preferred embodiment, the lower layer contains aluminum atoms (Al) and silicon atoms (Si) and hydrogen atoms (H) in a low concentration of C in the part adjacent to the support, and also contains silicon atoms (Si) and hydrogen atoms (H) in a much higher concentration at the interface t T . In such a case, the distribution across the layer thickness should be made such that the maximum concentration C max of the total of silicon atoms (Si) and hydrogen atoms (H) is 10 atom% or above, preferably 30 atom% or above, and most desirably 50 atom% or above. According to the present invention, the amount of silicon atoms (Si) in the lower layer should be properly established so that the object of the invention is effectively achieved. It is 5∼95 atom%, preferably 10∼90 atom%, and most desirably 20∼80 atom%. According to the present invention, the amount of hydrogen atoms (H) in the lower layer should be properly established so that the object of the invention is effectively achieved. It is 0.01∼70 atom%, preferably 0.1∼50 atom%, and most desirably 1∼40 atom%. The above-mentioned atoms (Mc) optionally contained to control image quality are selected from atoms belonging to Group III of the periodic table, except for aluminum atoms (Al) ("Group III atoms" for short hereinafter), atoms belonging to Group V of the periodic table, except for nitrogen atoms (N) ("Group V atoms" for short hereinafter), and atoms belonging to Group VI of the periodic table, except for oxygen atoms (O) ("Group VI atoms" for short hereinafter). Examples of Group III atoms include B (boron), Ga (gallium), In (indium), and Tl (thallium), with B and Ga being preferable. Examples of Group V atoms include P (phosphorus), As (arsenic), Sb (antimony), and Bi (bismuth), with P and As being preferable. Examples of Group VI atoms include S (sulfur), Se (selenium), Te (tellurium), and Po (polonium), with S and Se being preferable. According to the present invention, the lower layer may contain atoms (Mc) to control image quality, which are Group III atoms, Group V atoms, or Group VI atoms. The atoms (Mc) improve the injection of electric charge across the aluminum support and the upper layer and/or improve the transferability of electric charge in the lower layer. They also control the conduction type and/or conductivity in the layer region of the lower layer which contains a less amount of aluminum atoms (Al). In the lower layer, the content of atoms (Mc) to control image quality should be 1 x 10⁻³ ∼ 5 x 10⁴ atom-ppm, preferably 1 x 10⁻² ∼ 5 x 10⁴ atom-ppm, and most desirably 1 x 10⁻² ∼ 5 x 10³ atom-ppm. The above-mentioned atoms (NCOc) optionally contained to control durability are selected from carbon atoms (C), nitrogen atoms (N), and oxygen atoms (O). When contained in the lower layer, carbon atoms (C), and/or nitrogen atoms (N), and/or oxygen atoms (O) as the atoms (CNOc) to control durability improve the injection of electric charge across the aluminum support and the upper layer and/or improve the transferability of electric charge in the lower layer and/or improve the adhesion of the lower layer to the aluminum support. They also control the width of the forbidden band in the layer region of the lower layer which contains a less amount of aluminum atoms (Al). In the lower layer, the content of atoms (NCOc) to control durability should be 1 x 10³ ∼ 5 x 10⁵ atom-ppm, preferably 5 x 10¹ ∼ 4 x 10⁵ atom-ppm, and most desirably 1 x 10² ∼ 3 x 10³ atom-ppm. The above-mentioned halogen atoms (X) optionally contained in the lower layer are selected from fluorine atoms (F), chlorine atoms (Cl), bromine atoms (Br), and iodine atoms (I). When contained in the lower layer, fluorine atoms (F), and/or chlorine atoms (Cl), and/or bromine atoms (Br), and/or iodine atoms (I) as the halogen atoms (V) compensate for the unbonded hands of silicon atoms (Si) and aluminum atoms (Al) contained mainly in the lower layer and make the lower layer stable in terms of composition and structure, thereby improving the quality of the layer. The content of halogen atoms (X) in the lower layer should be properly established so that the object of the invention is effectively achieved. It is 1 ∼ 4 x 10⁵ atom-ppm, preferably 10 ∼ 3 x 10⁵ atom-ppm, and most desirably 1 x 10² ∼ 2 x 10⁵ atom-ppm. According to the present invention, the lower layer may optionally contain germanium atoms (Ge) and/or tin atoms (Sn). They improve the injection of electric charge across the aluminum support and the upper layer and/or improve the transferability of electric charge in the lower layer and/or improve the adhesion of the lower layer to the aluminum support. They also narrow the width of the forbidden band in the region of the lower layer which contains a less amount of aluminum atoms (Al). These effects suppress interference which occurs when a light of long wavelength such as semiconductor laser is used as the light source for image exposure in the electrophotographic apparatus. The content of germanium atoms (Ge) and/or tin atoms (Sn) in the lower layer should be properly established so that the object of the invention is effectively achieved. It is 1 ∼ 9 x 10⁵ atom-ppm, preferably 1 x 10² ∼ 8 x 10⁵ atom-ppm, and most desirably 5 x 10² ∼ 7 x 10⁵ atom-ppm. According to the present invention, the lower layer may optionally contain, as the alkali metal atoms and/or alkaline earth metal atoms and/or transition metal atoms, magnesium atoms (Mg) and/or copper atoms (Cu) and/or sodium atoms (Na) and/or yttrium atoms (Y) and/or manganese atoms (Mn) and/or zinc atoms (Zn). They disperse hydrogen atoms (H) and halogen atoms (X) uniformly in the lower layer and prevent the cohesion of hydrogen which is considered to cause cracking and peeling. They also improve the injection of electric charge across the aluminum support and the upper layer and/or improve the transferability of electric charge in the lower layer and/or improve the adhesion of the lower layer to the aluminum support. The content of the above-mentioned metals in the lower layer should be properly established so that the object of the invention is effectively achieved. It is 1 ∼ 2 x 10⁵ atom-ppm, preferably 1 x 10² ∼ 1 x 10⁵ atom-ppm, and most desirably 5 x 10² ∼ 5 x 10⁴ atom-ppm. According to the present invention, the lower layer composed of AlSiH is formed by the vacuum deposition film forming method, as in the upper layer which will be mentioned later, under proper conditions for the desired characteristic properties. The thin film is formed by one of the following various methods. Glow discharge method (including ac current discharge CVD, e.g., low-frequency CVD, high-frequency CVD, and microwave CVD, and dc current CVD), ECR-CVD method, sputtering method, vacuum metallizing method, ion plating method, light CVD method, "HRCVD" method (explained below), "FOCVD" method (explained below). (According to HRCVD method, an active substance (A) formed by the decomposition of a raw material gas and the other active substance (B) formed from a substance reactive to the first active substance are caused to react with each other in a space where the film formation is accomplished. According to FOCVD method, a raw material gas and a halogen-derived gas capable of oxidizing said raw material gas are caused to react in a space where the film formation is accomplished.) A proper method should be selected according to the manufacturing conditions, the capital available, the production scale, and the characteristic properties required for the light receiving member for electrophotography. Preferable among these methods are ion plating method, HRCVD method, FOCVD method on account of their ability to control the production conditions and to introduce aluminum atoms (Al), silicon atoms (Si), and hydrogen atoms (H) with ease. These methods may be used in combination with one another in the same apparatus. The glow discharge method may be performed in the following manner to form the lower layer of AlSiH. The raw material gases are introduced into an evacuatable deposition chamber, and glow discharge is performed, with the gases kept at at a desired pressure, so that a layer of AlSiH is formed as required on the surface of the support placed in the chamber. The raw material gases may contain a gas to supply aluminum atoms (Al), a gas to supply silicon atoms (Si), a gas to supply hydrogen atoms (H), an optional gas to supply atoms (Mc) to control image quality, an optional gas to supply atoms (CNOc) to control durability, an optional gas to supply halogen atoms (X), an optional gas to supply atoms (GSc), germanium atoms (Ge) and tin atoms (Sn), and an optional gas to supply atoms (Me) (at least one kind of alkali metal atoms, alkaline earth metal atoms, and transition metal atoms). The HRCVD may be performed in the following manner to form the lower layer of AlSiH. The raw material gases are introduced all together or individually into an evacuatable deposition chamber, and glow discharge is performed or the gases are heated, with the gases kept at a desired pressure, during which a first active substance (A) is formed and a second active substance (B) is introduced into the deposition chamber, so that a layer of AlSiH is formed as required on the surface of the support placed in the chamber. The raw material gases may contain a gas to supply aluminum atoms, (Al), a gas to supply silicon atoms (Si), an optional gas to supply atoms (Mc) to control image quality, an optional gas to supply atoms (CNOc) to control durability, an optional gas to supply halogen atoms (X), an optional gas to supply atoms (GSc) (germanium atoms (Ge) and tin atoms (Sn)), and an optional gas to supply atoms (Me) (at least one kind of alkali metal atoms, alkaline earth metal atoms, and transition metal atoms). A second active substance (B) is formed by introducing a gas to supply hydrogen into the activation chamber. Said first active substance (A) and said second active substance (B) are individually introduced into the deposition chamber. The FOCVD method may be performed in the following manner to form the lower layer of AlSiH. The raw material gases are introduced into an evacuatable deposition chamber, and chemical reactions are performed, with the gases kept at a desired pressure, so that a layer of AlSiH is formed as required on the surface of the support placed in the chamber. The raw material gases may contain a gas to supply aluminum atoms (Al), a gas to supply silicon atoms (Si), a gas to supply hydrogen atoms (H), an optional gas to supply atoms (Mc) to control image quality, an optional gas to supply atoms (CNOc) to control durability, an optional gas to supply halogen atoms (X), an optional gas to supply atoms (GSc) (germanium atoms (Ge) and tin atoms (Sn)), and an optional gas to supply atoms (Me) (at least one kind of alkali metal atoms, alkaline earth metal atoms, and transition metal atoms). They may be introduced into the chamber altogether or individually, and a halogen (X) gas is introduced into the chamber separately from said raw materials gas, and these gases are subjected to chemical reaction in the deposition chamber. The sputtering method may be performed in the following manner to form the lower layer of AlSiH. The raw material gases are introduced into a sputtering deposition chamber, and a desired gas plasma environment is formed using an aluminum target and an Si target in an inert gas of Ar or He or an Ar- or He-containing gas. The raw material gases may contain a gas to supply hydrogen atoms (H), an optional gas to supply atoms (Mc) to control image quality, an optional gas to supply atoms (CNOc) to control durability, an optional gas to supply halogen atoms (X), an optional gas to supply atoms (GSc) (germanium atoms (Ge) and tin atoms (Sn)), and an optional gas to supply atoms (Me) (at least one kind of alkali metal atoms, alkaline earth metal atoms, and transition metal atoms). If necessary, a gas to supply aluminum atoms (Al) and/or to supply silicon atoms (Si) are introduced into the sputtering chamber. The ion plating method may be performed in the same manner as the sputtering method, except that vapors of aluminum and silicon are passed through the gas plasma environment. The vapors of aluminum and silicon are produced from aluminum and silicon polycrystal or single crystal placed in a boat which is heated by resistance or electron beams (EB method). According to the present invention, the lower layer contains aluminum atoms (Al), silicon atoms (Si), hydrogen atoms (H), optional atoms (Mc) to control image quality, atoms (CNOc) to control durability, optional halogen atoms (X), optional germanium atoms (Ge), optional tin atoms (Sn), optional alkali metal atoms, optional alkaline earth metal atoms, and optional transition metal atoms (collectively referred to as atoms (ASH) hereinafter), which are distributed in different concentrations across the layer thickness. The lower layer having such a depth profile can be formed by controlling the flow rate of the feed gas to supply atoms (ASH) according to the desired rate of change in concentration. The flow rate may be changed by operating the needle valve in the gas passage manually or by means of a motor, or by adjusting the mass flow controller manually or by means of a programmable control apparatus. In the case where the sputtering method is used, the lower layer having such a depth profile can be formed, as in the glow discharge method, by controlling the flow rate of the feed gas to supply atoms (ASH) according to the desired rate of change in concentration. Alternatively, it is possible to use a sputtering target in which the mixing ratio of Al and Si is properly changed in the direction of layer thickness of the target. According to the present invention, the gas to supply Al includes, for example, AlCl₃, AlBr₃, AlI₃, Al(CH₃)₂Cl, Al(CH₃)₃, Al(OCH₃)₃, Al(C₂H₅)₃, Al(OC₂H₅)₃, Al(i-C₄H₉)₃, Al(i-C₃H₇)₃, Al(C₃H₇)₃, and Al(OC₄H₉)₃. These gases to supply Al may be diluted with an inert gas such as H₂, He, Ar, and Ne, if necessary. According to the present invention, the gas to supply Si includes, for example, gaseous or gasifiable silicohydrides (silanes) such as SiH₄, Si₂H₆, Si₃H₈ and Si₄H₁₀. SiH₄ and Si₂H₆ are preferable from the standpoint of ease of handling and the efficient supply of Si. These gases to supply Si may be diluted with an inert gas such as H₂, He, Ar, and Ne, if necessary. According to the present invention, the gas to supply H includes, for example, silicohydrides (silanes) such as SiH₄, Si₂H₆, Si₃H₈ and Si₄H₁₀. The amount of hydrogen atoms contained in the lower layer may be controlled by regulating the flow rate of the feed gas to supply hydrogen and/or regulating the temperature of the support and/or regulating the electric power for discharge. The lower layer may contain atoms (Mc) to control image quality, such as Group III atoms, Group V atoms and Group VI atoms. This is accomplished by introducing into the deposition chamber the raw materials to form the lower layer together with a raw material to introduce Group III atoms, a raw material to introduce Group V atoms, or a raw material to introduce Group VI atoms. The raw material to introduce Group III atoms, the raw material to introduce Group V atoms, or the raw material to introduce Group VI atoms may be gaseous at normal temperature and normal pressure or gasifiable under the layer forming conditions. The raw material to introduce Group III atoms, especially boron atoms, include, for example, boron hydrides such as B₂H₆, B₅H₉, B₅H₁₁, B₆H₁₀, B₆H₁₂ and B₆H₁₄, and boron halides such as BF₃, BCl₃ and BBr₃. Additional examples include GaCl₃, Ga(CH₃)₃, InCl₃, and TlCl₃. The raw material to introduce Group V atoms, especially phosphorus atoms, include, for example, phosphorus hydrides such as PH₃ and P₃H₄, and phosphorus halides such as PH₄I, PF₃, PF₅, PCl₃, PBr₃, PBr₅, and PI₃. Other examples include AsH₃, AsF₃, AsCl₃, AsBr₃, AsF₅, SbH₃, SbF₃, SbF₅, SbCl₃, SbCl₅, BiH₃, BiCl₃, and BiBr₃. The raw material to introduce Group VI atoms includes, for example, gaseous or gasifiable substances such as H₂S, SF₄, SF₆, SO₂, SO₂F₂, COS, CS₂, CH₃SH, C₂H₅SH, C₄H₄S, (CH₃)₂S, and S(C₂H₅)₂S. Other examples include gaseous or gasifiable substances such as SeH₂, SeF₆, (CH₃)₂Se, (C₂H₅)₂Se, TeH₂, TeF₆, (CH₃)₂Te, and (C₂H₅)₂Te. These raw materials to introduce atoms (Mc) to control image quality may be diluted with an inert gas such as H₂, He, Ar, and Ne. According to the present invention, the lower layer may contain atoms (CNOc) to control durability, e.g., carbon atoms (C), nitrogen atom (N), and oxygen atoms (O). This is accomplished by introducing into the deposition chamber the raw materials to form the lower layer, together with a raw material to introduce carbon atoms (C), or a raw material to introduce nitrogen atoms (N), or a raw material to introduce oxygen atoms (O). Raw materials to introduce carbon atoms (C), nitrogen atoms (N), or oxygen atoms (O) may be in the gaseous form at normal temperature and under normal pressure or may be readily gasifiable under the layer forming conditions. A raw material gas to introduce carbon atoms (C) includes saturated hydrocarbons having 1 to 4 carbon atoms, ethylene series hydrocarbons having 2 to 4 carbon atoms, and acetylene series hydrocarbons having 2 to 3 carbon atoms. Examples of the saturated hydrocarbons include methane (CH₄), ethane (C₂H₆), propane (C₃H₆), n -butane ( n -C₄H₁₀) and pentane (C₅H₁₂). Examples of the ethylene series hydrocarbons include ethylene (C₂H₄), propylene (C₃H₆), butene-1 (C₄H₈), butene-2 (C₄H₈), isobutylene (C₄H₈), and pentene (C₅H₁₀). Examples of the acetylene series hydrocarbons include acetylene (C₂H₂), methylacetylene (C₃H₄) and butyne (C₄H₆). The raw material gas composed of Si, C, and H includes alkyl silicides such as Si(CH₃)₄ and Si(C₂H₅)₄. Additional examples include halogenated hydrocarbons such as CF₄, CCl₄, and CH₃CF₃, which introduce carbon atoms (C) as well as halogen atoms (X). Examples of the raw material gas to introduce nitrogen atoms (N) include nitrogen and gaseous or gasifiable nitrogen compounds (e.g., nitrides and azides) which are composed of nitrogen and hydrogen, such as ammonia (NH₃), hydrazine (H₂NNH₂), hydrogen azide (HN₃), and ammonium azide (NH₄N₃). Additional examples include halogenated nitrogen compounds such as nitrogen trifluoride (F₃N) and nitrogen tetrafluoride (F₄N₂), which introduce nitrogen (N) atoms as well as halogen atoms (X). Examples of the raw material gas to introduce oxygen atoms (O) include oxygen (O₂), ozone (O₃), nitrogen monoxide (NO), nitrogen dioxide (NO₂), dinitrogen oxide (N₂O), dinitrogen trioxide (N₂O₃), trinitrogen tetraoxide (N₃O₄), dinitrogen pentaoxide (N₂O₅), and nitrogen trioxide (NO₃). Additional examples include lower siloxanes such as disiloxane (H₃SiOSiH₃) and trisiloxane (H₃SiOSiH₂OSiH₃) which are composed of silicon atoms (Si), oxygen atoms (O), and hydrogen atoms (H). Examples of the gas to supply halogen atoms include halogen gases and gaseous or gasifiable halides, interhalogen compounds, and halogen-substituted silane derivatives. Additional examples include gaseous or gasifiable halogen-containing silicohydrides composed of silicon atoms and halogen atoms. The halogen compounds that can be suitably used in the present invention include halogen gases such as fluorine, chlorine, bromine and iodine; and interhalogen compounds such as BrF, ClF, ClF₃, BrF₅, BrF₃, IF₃, IF₇, ICl, and IBr. Examples of the halogen-containing silicon compounds, or halogen-substituted silane compounds, include silane (SiH₄) and halogenated silicon such as Si₂F₆, SiCl₄, and SiBr₄. In the case where the halogen-containing silicon compounds is used to form the light receiving member for electrophotography by the glow discharge method or HRCVD method, it is possible to form the lower layer composed of AlSiH containing halogen atoms on the support without using a silicohydride gas to supply silicon atoms. In the case where the lower layer containing halogen atoms is formed by the glow discharge method of HRCVD method, a silicon halide gas is used as the gas to supply silicon atoms. The silicon halide gas may be mixed with hydrogen or a hydrogen-containing silicon compound gas to facilitate the introduction of hydrogen atoms at a desired level. The above-mentioned gases may be used individually or in combination with one another at a desired mixing ratio. The raw materials to form the lower layer which are used in addition to the above-mentioned halogen compounds or halogen-containing silicon compounds include gaseous or gasifiable hydrogen halides such as HF, HCl, HBr, and HI; and halogen-substituted silicohydrides such as SiH₃F, SiH₂F₂, SiHF₃, SiH₂I₂, SiH₂Cl₂, SiHCl₃, SiH₂Br₂, and SiHBr₃. Among these substances, the hydrogen-containing halides are a preferred halogen-supply gas because they supply the lower layer with halogen atoms as well as hydrogen atoms which are very effective for the control of electric or photoelectric characteristics. The introduction of hydrogen atoms into the lower layer may also be accomplished in another method by inducing discharge in the deposition chamber containing a silicohydride such as SiH₄, Si₂H₆, Si₃H₈, and Si₄H₁₀ and a silicon compound to supply silicon atoms (Si). The amount of hydrogen atoms (H) and/or halogen atoms (X) to be introduced into the lower layer may be controlled by regulating the temperature of the support, the electric power for discharge, and the amount of raw materials for hydrogen atoms and halogen atoms to be introduced into the deposition chamber. The lower layer may contain germanium atoms (Ge) or tin atoms (Sn). This is accomplished by introducing into the deposition chamber the raw materials to form the lower layer together with a raw material to introduce germanium atoms (Ge) or tin atoms (Sn) in a gaseous form. The raw material to supply germanium atoms (Ge) or the raw material to supply tin atoms (Sn) may be gaseous at normal temperature and under normal pressure or gasifiable under the layer forming conditions. The substance that can be used as a gas to supply germanium atoms (Ge) include gaseous or gasifiable germanium hydrides such as GeH₄, Ge₂H₆, Ge₃H₈, and Ge₄H₁₀. Among them, GeH₄, Ge₂H₆, and Ge₃H₈ are preferable from the standpoint of easy handling at the time of layer forming and the efficient supply of germanium atoms (Ge). Other effective raw materials to form the lower layer include gaseous or gasifiable germanium hydride-halides such as GeHF₃, GeH₂F₂, GeH₃F, GeHCl₃, GeH₂Cl₂, GeH₃Cl, GeHBr₃, GeH₂Br₂, GeH₃Br, GeHI₃, GeH₂I₂, and GeH₃I and germanium halides such as GeF₄, GeCl₄, GeBr₄, GeI₄, GeF₂, GeCl₂, GeBr₂, and GeI₂. The substance that can be used as a gas to supply tin atoms (Sn) include gaseous or gasifiable tin hydrides such as SnH₄, Sn₂H₆, Sn₃H₈, and Sn₄H₁₀. Among them, SnH₄, Sn₂H₆, and Sn₃H₈ are preferable from the standpoint of easy handling at the time of layer forming and the efficient supply of tin atoms (Sn). Other effective raw materials to form the lower layer include gaseous or gasifiable tin hydride-halides such as SnHF₃, SnH₂F₂, SnH₃F, SnHCl₃, SnH₂Cl₂, SnH₃Cl, SnHBr₃, SnH₂Br₂, SnH₃Br, SnHI₃, SnH₂I₂, and SnH₃I, and tin halides such as SnF₄, SnCl₄, SnBr₄, SnI₄, SnF₂, SnCl₂, SnBr₂, and SnI₂. The gas to supply GSc may be diluted with an inert gas such as H₂, He, Ar, and Ne, if necessary. The lower layer may contain magnesium atoms (Mg). This is accomplished by introducing into the deposition chamber the raw materials to form the lower layer together with a raw material to introduce magnesium atoms (Mg) in a gaseous form. The raw material to supply magnesium atoms (Mg) may be gaseous at normal temperature and under normal pressure or gasifiable under the layer forming conditions. The substance that can be used as a gas to supply magnesium atoms (Mg) include organometallic compounds containing magnesium atoms (Mg). Bis(cyclopentadienyl)magnesium (II) complex salt (Mg(C₅H₅)₂ is preferable from the standpoint of easy handling at the time of layer forming and the efficient supply of magnesium atoms (Mg). The gas to supply magnesium atoms (Mg) may be diluted with an inert gas such as H₂, He, Ar, and Ne, if necessary. The lower layer may contain copper atoms (Cu). This is accomplished by introducing into the deposition chamber the raw materials to form the lower layer together with a raw material to introduce copper atoms (Cu) in a gaseous form. The raw material to supply copper atoms (Cu) may be gaseous at normal temperature and under normal pressure or gasifiable under the layer forming conditions. The substance that can be used as a gas to supply copper atoms (Cu) include organometallic compounds containing copper atoms (Cu). Copper (II) bisdimethyl glyoximate Cu(C₄H₇N₂O₂)₂ is preferable from the standpoint of easy handling at the time of layer forming and the efficient supply of copper atoms (Cu). The gas to supply copper atoms (Cu) may be diluted with an inert gas such as H₂, He, Ar, and Ne, if necessary. The lower layer may contain sodium atoms (Na) or yttrium atoms (Y) or manganese atoms (Mn) or zinc atoms (Zn), etc. This is accomplished by introducing into the deposition chamber the raw materials to form the lower layer together with a raw material to introduce sodium atoms (Na) or yttrium atoms (Y) or manganese atoms (Mn) or zinc atoms (Zn). The raw material to supply sodium atoms (Na) or yttrium atoms (Y) or manganese atoms (Mn) or zinc atoms (Zn) may be gaseous at normal temperature and under normal pressure or gasifiable under the layer forming conditions. The substance that can be used as a gas to supply sodium atoms (Na) includes sodium amine (NaNH₂) and organometallic compounds containing sodium atoms (Na). Among them, sodium amine (NaNH₂) is preferable from the standpoint of easy handling at the time of layer forming and the efficient supply of sodium atoms (Na). The substance that can be used as a gas to supply yttrium atoms (Y) includes organometallic compounds containing yttrium atoms (Y). Triisopropanol yttrium Y( Oi -C₃H₇)₃ is preferable from the standpoint of easy handling at the time of layer forming and the efficient supply of yttrium atoms (Y). The substance that can be used as a gas to supply manganese atoms (Mn) includes organometallic compounds containing manganese atoms (Mn). Monomethylpentacarbonylmanganese Mn(CH₃)(CO)₅, is preferable from the standpoint of easy handling at the time of layer forming and the efficient supply of manganese atoms (Mn). The substance that can be used as a gas to supply zinc atoms (Zn) includes organometallic compounds containing zinc atoms (Zn). Diethyl zinc Zn(C₂H₅)₂ is preferable from the standpoint of easy handling at the time of layer forming and the efficient supply of zinc atoms (Zn). The gas to supply sodium atoms (Na) or yttrium atoms (Y) or manganese atoms (Mn) or zinc atoms (Zn) may be diluted with an inert gas such as H₂, He, Ar, and Ne, if necessary. According to the present invention, the lower layer should have a thickness of 0.03∼5 µm, preferably, 0.01∼1 µm, and most desirably 0.05∼0.5 µm, from the standpoint of the desired electrophotographic characteristics and economic effects. According to the present invention, the lower layer has an interface region which is in contact with the aluminum support and contains less than 95% of the aluminum atoms contained in the aluminum support. If the interface region contains more than 95% of the aluminum atoms contained in the aluminum support, it merely functions as the support. The lower layer also has an interface which is in contact with the upper layer and contains more than 5% of the aluminum atoms contained in the lower layer. If the interface region contains less than 5% of the aluminum atoms contained in the lower layer, it merely functions as the upper layer. In order to form the lower layer of AlSiH which has the characteristic properties to achieve the object of the present invention, it is necessary to properly establish the gas pressure in the deposition chamber and the temperature of the support. The gas pressure in the deposition chamber should be properly selected according to the desired layer. It is usually 1 x 10⁻⁵ ∼ 10 Torr, preferably 1 x 10⁻⁴ ∼ 3 Torr, and most desirably 1 x 10⁻⁴ ∼ 1 Torr. The temperature (Ts) of the support should be properly selected according to the desired layer. It is usually 50∼600°C, and preferably 100∼400°C. In order to form the lower layer of AlSiH by the glow discharge method according to the present invention, it is necessary to properly establish the discharge electric power to be supplied to the deposition chamber according to the desired layer. It is usually 5 x 10⁻⁵ ∼ 10 W/cm³, preferably 5 x 10⁻⁴ ∼ 5 W/cm³ and most desirably 1 x 10⁻³ ∼ 2 x 10⁻¹ W/cm³. The gas pressure of the deposition chamber, the temperature of the support, and the discharge electric power to be supplied to the deposition chamber mentioned above should be established interdependently so that the lower layer having the desired characteristic properties can be formed. Upper layer According to the present invention, the upper layer is made of non-Si(H,X) so that it has the desired photoconductive characteristics. According to the present invention, the upper layer has a layer region which is in contact with the lower layer, said layer region containing germanium atoms and/or tin atoms, and optionally atoms (M) to control conductivity and/or carbon atoms (C) and/or nitrogen atoms (N) and/or oxygen atoms (O). The upper layer has another layer region which may contain at least one kind of atoms (M) to control conductivity, carbon atoms (C), nitrogen atoms (N), oxygen atoms (O), germanium atoms (Ge), and tin atoms (Sn). The upper layer should preferably have a layer region near the free surface which contains at least one kind of carbon atoms (C), nitrogen atoms (N), and oxygen atoms (O). The germanium atoms (Ge) and/or tin atoms (Sn) and/or optional atoms (M) to control conductivity and/or carbon atoms (C) and/or nitrogen atoms (N) and/or oxygen atoms (O) contained in the layer region in contact with the lower layer may be uniformly distributed in the layer region or may be distributed unevenly across the layer thickness. In either cases, it is necessary that they should be uniformly distributed in the plane parallel to the surface of the support to to ensure the uniform characteristics within the plane. In a case where the upper layer has a layer region other than that in contact with the lower layer, said layer region containing at least one kind of atoms (M) to control the conductivity, carbon atoms (C), nitrogen atoms (N), oxygen atoms (O), germanium atoms (Ge) and tin atoms (Sn), the layer region may contain atoms (M) to control conductivity, carbon atoms (C), nitrogen atoms (N), oxygen atoms (O), germanium (Ge), tin atoms (Sn) in such a manner that they are uniformly distributed in the layer region, or they are distributed unevenly across the layer thickness. In either cases, it is necessary that they should be uniformly distributed in the plane parallel to the surface of the support to to ensure the uniform characteristics within the plane. According to the present invention, the upper layer may contain at least one kind of alkali metal atoms, alkaline earth metal atoms, and transition metal atoms. They may be contained in the entire upper layer or in a portion of the upper layer, and they may be distributed uniformly throughout the upper layer or unevenly across the layer thickness. In either cases, it is necessary that they should be uniformly distributed in the plane parallel to the surface of the support. This is important to ensure the uniform characteristics within the plane. The upper layer may have a layer region (abbreviated as layer region (M) hereinafter) containing atoms (M) to control conductivity (abbreviated as atoms (M) hereinafter), a layer region (abbreviated as layer region (CNO) hereinafter) containing carbon atoms (C) and/or nitrogen atoms (N), and/or oxygen atoms (O) (abbreviated as atoms (CNO) hereinafter), a layer region containing at least one kind of alkali metal atoms, alkaline earth metal atoms, and transition metal atoms, and a layer region (abbreviated as layer region (GS B ) hereinafter) containing germanium atoms (Ge) and/or tin atoms (Sn) (abbreviated as atoms (GS) hereinafter), said layer region being in contact with lower layer. These layer regions may substantially overlap one another, or they possess in common a portion of the obverse of the layer region (GS B ) or exist in the layer region (GS B ). The layer region ("layer region (GS T )" for short hereinafter) containing atoms (GS), the layer region (M), the layer region (CNO), and the layer region containing at least one kind of alkali metal atoms, alkaline earth metal atoms, and transition metal atoms (excepting the layer region (GS B ) may be substantially the same layer region, may possess a portion of each layer region, or may possess substantially no portion of each layer region. (The layer region (GS B ) and the layer region (GS T ) will be collectively referred to as "layer region (GS)" hereinafter.) Figs. 17 to 36 show the typical example of the across-the-layer distribution of atoms (M) contained in layer region (M), the typical example of the across-the-layer distribution of atoms (CNO) contained in layer region (CNO), the typical example of the across-the-layer distribution of atoms (GS) contained in layer region (GS), and the typical example of the across-the-layer distribution of alkali metal atoms, alkaline earth metal atoms, and transition metal atoms contained in the layer region containing at least one kind of alkali metal atoms, alkaline earth metal atoms and transition metal atoms, in the upper layer of the light receiving member for electrophotography according to the present invention. (These layer regions will be collectively referred to as "layer region (Y)" and these atoms, "atoms (Y)", hereinafter.) Accordingly, Figs. 17 to 36 show the typical examples of the across-the-layer distribution of atoms (Y) contained in layer region (Y). If layer region (M), layer region (CNO), layer region (GS), and a layer region containing at least one kind of alkali metal, alkaline earth metal, and transition metal are substantially the same, as mentioned above, the number of layer region (Y) in the upper layer is single; otherwise, it is plural. In Figs. 17 to 36, the abscissa represents the concentration (C) of atoms (Y) and the ordinate represents the thickness of layer region (Y), while t B representing the position of the end of the layer region (Y) adjoining the lower layer, t T representing the position of the end of the layer region (Y) adjoining the free surface. In other words, layer region (Y) containing the atoms (Y) is formed from the t B side to the t T side. Fig. 17 shows a first typical example of the distribution of atoms (Y) across layer thickness in layer region (Y). The distribution shown in Fig. 17, is such that the concentration (C) of atoms (Y) gradually and continuously increases from C₁₇₁ to C₁₇₂ between position t B and position t T . The distribution shown in Fig. 18, is such that the concentration (C) of atoms (Y) linearly increases from C₁₈₁ to C₁₈₂ between position t B and position t₁₈₁ and then remains constant at C₁₈₃ between position t₁₈₁ and position t T . The distribution shown in Fig. 19 is such that the concentration (C) of atoms (Y) remains constant at C₁₉₁ between position t B and position t₁₉₁, increases gradually and continuously from C₁₉₁ to C₁₉₂ between position t₁₉₁ to position t₁₉₂, and remains constant at C₁₉₃ between position t₁₉₂ and position t T . The distribution shown in Fig. 20 is such that the concentration (C) of atoms (Y) remains constant at C₂₀₁ between position t B and position t₂₀₁, remains constant at C₂₀₂ between position t₂₀₁ and position t₂₀₂, and remains constant at C₂₀₃ between position t₂₀₂ and position t T . The distribution shown in Fig. 21 is such that the concentration (C) of atoms (Y) remains constant at C₁₂₁ between position t B and position t T . The distribution shown in Fig. 22 is such that the concentration (C) of atoms (Y) remains constant at C₂₂₁ between position t B and position t₂₂₁, and decreases gradually and continuously from C₂₂₂ to C₂₂₃ between position t₂₂₁ and position t T . The distribution shown in Fig. 23 is such that the concentration (C) of atoms (Y) decreases gradually and continuously from C₂₃₁ to C₂₃₂ between position t B and position t T . The distribution shown in Fig. 24 is such that the concentration (C) of atoms (Y) remains constant at C₂₄₁ between position t B and position t₂₄₁, and decreases gradually and continuously from C₂₄₂ to substantially zero between position t₂₄₁ and position t T . ("Substantially zero" means that the amount is lower than the detection limit. The same shall apply hereinafter.) The distribution shown in Fig. 25 is such that the concentration (C) of atoms (Y) decreases gradually and continuously from C₂₅₁ to substantially zero between position t B and position t T . The distribution shown in Fig. 26 is such that the concentration (C) of atoms (Y) remains constant at C₂₆₁ between position t B and position t₂₆₁, and decreases linearly from C₂₆₁ to C₂₆₂ between position t₂₆₁ to t T . The distribution shown in Fig. 27 is such that the concentration (C) of atoms (Y) decreases linearly from C₂₇₁ to substantially zero between position t B and position t T . The distribution shown in Fig. 28 is such that the concentration (C) of atoms (Y) remains constant at C₂₈₁ between position t B and position t₂₈₁ and decreases linearly from C₂₈₁ to C₂₈₂ between position t₂₈₁ and position t T . The distribution shown in Fig. 29 is such that the concentration (C) of atoms (Y) decreases gradually and continuously from C₂₉₁ to C₂₉₂ between position t B and position t T . The distribution shown in Fig. 30 is such that the concentration (C) of atoms (Y) remains constant at C₃₀₁ between position t B and position t₃₀₁ and decreases linearly from C₃₀₂ to C₃₀₃ between position t₃₀₁ and position t T . The distribution shown in Fig. 31 is such that the concentration (C) of atoms (Y) increases gradually and continuously from C₃₁₁ to C₃₁₂ between position t B and position t₃₁₁ and remains constant at C₃₁₃ between position t₃₁₁ and position t T . The distribution shown in Fig. 32 is such that the concentration (C) of atoms (Y) increases gradually and continuously from C₃₂₁ to C₃₂₂ between position t B and position t T . The distribution shown in Fig. 33 is such that the concentration (C) of atoms (Y) increases gradually from substantially zero to C₃₃₁ between position t B and position t₃₃₁ and remains constant at C₃₃₂ between position t₃₃₁ and position t T . The distribution shown in Fig. 34 is such that the concentration (C) of atoms (Y) increases gradually from substantially zero to C₃₄₁ between position t B and position t T . The distribution shown in Fig. 35 is such that the concentration (C) of atoms (Y) increases linearly from C₃₅₁ to C₃₅₂ between position t B and position t₃₅₁ and remains constant at C₃₅₂ between position t₃₅₁ and position t T . The distribution shown in Fig. 36 is such that the concentration (C) of atoms (Y) increases linearly from C₃₆₁ to C₃₆₂ between position t B and position t T . The above-mentioned atoms (M) to control conductivity include so-called impurities in the field of the semiconductor. According to the present invention, they are selected from atoms belonging to Group III of the periodic table, which impart the p-type conductivity (abbreviated as "Group III atoms" hereinafter); atoms belonging to Group V of the periodic table excluding nitrogen atoms (N), which impart the n-type conductivity (abbreviated as "Group V atoms" hereinafter); and atoms belonging to Group VI of the periodic table excluding oxygen atoms (O) (abbreviated as "Group VI atoms" hereinafter). Examples of the Group III atoms can include B (boron), Al (aluminum), Ga (gallium), In (indium), Tl (thallium), with B, Al, and Ga being preferable. Examples of Group V atoms include P (phosphorus), As (arsenic), Sb (antimony), and Bi (bismuth), with P and As being preferable. Examples of Group VI atoms include S (sulfur), Se (selenium), Te (tellurium), and Po (polonium), with S and Se being preferable. According to the present invention, the layer region (M) may contain atoms (M) to control conductivity, which are Group III atoms, Group V atoms, or Group VI atoms. The atoms (M) control the conduction type and/or conductivity, and/or improve the injection of electric charge across the layer region (M) and the other layer region than the layer region (M) in the upper layer. In the layer region (M), the content of atoms to control conductivity should be 1 x 10⁻³ ∼ 5 x 10⁴ atom-ppm, preferably 1 x 10⁻² ∼ 1 x 10⁴ atom-ppm, and most desirably 1 x 10⁻¹ ∼ 5 x 10³ atom-ppm. In the case where the layer region (M) contains carbon atoms (C) and/or nitrogen atoms (N) and/or oxygen atoms (O) in an amount less than 1 x 10³ atom-ppm, the layer region (M) should preferably contain atoms (M) to control conductivity in an amount of 1 x 10⁻³ ∼ 1 x 10³ atom-ppm. In the case where the layer region (M) contains carbon atoms (C) and/or nitrogen atoms (N) and/or oxygen atoms (O) in an amount more than 1 x 10³ atom-ppm, the layer region (M) should preferably contain atoms (M) to control conductivity in an amount of 1 x 10⁻¹ ∼ 5 x 10⁴ atom-ppm. According to the present invention, the layer region (M) may contain carbon atoms (C) and/or nitrogen atoms (N) and/or oxygen atoms (O). They increase dark resistance and/or increase hardness and/or control spectral sensitivity and/or improve the adhesion between the layer region (CNO) and the other layer region than the layer region (CNO) in the upper layer. The layer region (CNO) should contain carbon atoms (C), and/or nitrogen atoms (N) and/or oxygen atoms (O) in an amount of 1 ∼ 9 x 10⁵ atom-ppm, preferably, 1 x 10¹ ∼ 5 x 10⁵ atom-ppm and most desirably 1 x 10² ∼ 3 x 10⁵ atom-ppm. If it is necessary to increase the dark resistance and/or increase hardness, the content should be 1 x 10³ ∼ 9 x 10⁵ atom-ppm; and if it is necessary to control spectral sensitivity, the content should be 1 x 10² ∼ 5 x 10⁵ atom-ppm. According to the present invention, the germanium atoms (Ge) and/or tin atoms (Sn) contained in the layer region (GS) produce the effect of controlling principally the spectral sensitivity, especially improving the sensitivity for long-wavelength light in the case where long-wavelength light such as semiconductor laser is used as the light source for image exposure in the electrophotographic apparatus, and/or preventing the occurrence of interference, and/or improving the adhesion of the layer region (GS B ) to the lower layer, and/or improving the adhesion of the layer region (GS) to the other layer region than the layer region (GS) in the upper layer. The amount of germanium atoms (Ge) and/or tin atoms (Sn) contained in the layer region (GS) should be 1 ∼ 9.5 x 10⁵ atom-ppm, more preferably, 1 x 10² - 8 x 10⁵ atom-ppm and, most desirably 5 x 10² ∼ 7 x 10⁵ atom-ppm. According to the present invention, the hydrogen atoms (H) and/or halogen atoms (X) contained in the upper layer compensate for the unbonded hands of silicon atoms (Si), thereby improving the quality of the layer. The amount of hydrogen atoms (H) or the total amount of hydrogen atoms (H) and halogen atoms (X) contained in the upper layer should preferably be 1 x 10³ ∼ 7 x 10⁵ atom-ppm. The amount of halogen atoms (X) should preferably be 1 ∼ 4 x 10⁵ atom-ppm. In the case where the content of the carbon atoms (C) and/or nitrogen atoms (N) and/or oxygen atoms (O) in the upper layer is less than 3 x 10⁵ atom-ppm, the amount of hydrogen atoms (H) or the total amount of hydrogen atoms (H) and halogen atoms (X) should preferably be 1 x 10³ ∼ 4 x 10⁵ atom-ppm. Moreover, in a case where the upper layer is made of poly-Si(H,X), the amount of hydrogen atoms (H) or the total amount of hydrogen atoms (H) and halogen atoms (X) in the upper layer should preferably be 1 x 10³ ∼ 2 x 10⁵ atom-ppm. In the case where the upper layer is made of A-Si(H,X), it should preferably be 1 x 10⁴ ∼ 7 x 10⁵ atom-ppm. According to the present invention, the amount of at least one kind of of atoms selected from alkali metal atoms, alkaline earth metals, and transition metal atoms contained in the upper layer should be 1 x 10⁻³ ∼ 1 x 10⁴ atoms-ppm, preferably 1 x 10⁻² ∼ 1 x 10³ atom-ppm, and most desirably 5 x 10⁻² ∼ 1 x 10² atom-ppm. According to the present invention, the upper layer composed of non-Si(H,X) is formed by the vacuum deposition film forming method, as in the lower layer which was mentioned earlier. The preferred methods include glow discharge method, sputtering method, ion plating method, HRCVD method, and FOCVD method. These methods may be used in combination with one another in the same apparatus. The glow discharge method may be performed in the following manner to form the upper layer of non-Si(H,X). The raw material gases are introduced into an evacuatable deposition chamber, and glow discharge is performed, with the gases kept at a desired pressure, so that a layer of non-Si(H,X) is formed as required on the lower layer which has previously been formed on the surface of the support placed in the chamber. The raw material gases are composed mainly of a gas to supply silicon atoms (Si), a gas to supply hydrogen atoms (H), and/or a gas to supply halogen atoms (X). They may also optionally contain a gas to supply atoms (M) to control conductivity and/or a gas to supply carbon atoms (C) and/or a gas to supply nitrogen atoms (N) and/or a gas to supply oxygen atoms (O) and/or a gas to supply germanium atoms (Ge) and/or a gas to supply tin atoms (Sn) and/or a gas to supply at least one kind of atoms selected from alkali metal atoms, alkaline earth metal atoms, and transition metal atoms. The HRCVD method may be performed in the following manner to form the upper layer of non-Si(H,X). The raw material gases are introduced all together or individually into an activation space in an evacuatable deposition chamber, and glow discharge is performed or the gases are heated, with gases kept at a desired pressure, during which an active substance (A) is formed. Simultaneously, a gas to supply hydrogen atoms (H) is introduced into another activation space to form an active substance (B) in the same manner. The active substance (A) and active substance (B) are introduced individually into the deposition chamber, so that a layer of non-Si(H,X) is formed on the lower layer which has previously been formed on the surface of the support placed in the chamber. The raw material gases are composed mainly of a gas to supply silicon atoms (Si) and a gas to supply halogen atoms (X). They may also optionally contain a gas to supply atoms (M) to control conductivity and/or a gas to supply carbon atoms (C) and/or a gas to supply nitrogen atoms (N), and/or a gas to supply oxygen atoms (O), and/or a gas to supply germanium atoms (Ge), and/or a gas to supply tin atoms (Sn) and/or a gas to supply at least one kind of atoms selected from alkali metal atoms, alkaline earth metal atoms, and transition metal atoms. The FOCVD method may be performed in the following manner to form the upper layer of non-Si(H,X). The raw material gases are introduced all together or individually into an evacuatable deposition chamber and a halogen (X) gas is introduced separately into the deposition chamber. With the gases kept at a desired pressure, chemical reactions are carried out so that a layer of non-Si(H,X) is formed on the lower layer which has previously been formed on the surface of the support placed in the chamber. The raw material gases are composed mainly of a gas to supply silicon atoms (Si) and a gas to supply hydrogen atoms (H). They may also optionally contain a gas to supply atoms (M) to control conductivity and/or a gas to supply carbon atoms (C) and/or a gas to supply nitrogen atoms (N) and/or a gas to supply oxygen atoms (O) and/or a gas to supply germanium atoms (Ge) and/or a gas to supply tin atoms (Sn) and/or a gas to supply at least one kind of atoms selected from alkali metal atoms, alkaline earth metal atoms, and transition metal atoms. The sputtering method or ion plating method may be performed to form the upper layer of non-Si(H,X), according to the known method as disclosed in, for example, Japanese Patent Laid-open No. 59342/1986. According to the present invention, the upper layer contains atoms (M) to control conductivity, carbon atoms (C), nitrogen atoms (N), oxygen atoms (O), germanium atoms (Ge), tin atoms (Sn), and at least one kind of atoms selected from alkali metal atoms, alkaline earth metal atoms and transition metal atoms (collectively referred to as "atoms (Z)" hereinafter), which are distributed in different concentrations across the layer thickness. The upper layer having such a depth profile can be formed by controlling the flow rate of the feed gas to supply atoms (Z) into the deposition chamber according to the desired curve of change in the case of glow discharge method, HRCVD method, and FOCVD method. The flow rate may be changed by operating the needle valve in the gas passage manually or by means of a motor, or by adjusting the mass flow controller manually or by means of a programmable control apparatus. According to the present invention, the gas to supply Si includes, for example, gaseous or gasifiable silicohydrides (silanes) such as SiH₄, Si₂H₆, Si₃H₈, and Si₄H₁₀. SiH₄ and Si₂H₆ are preferable from the standpoint of ease of handling and the efficiency of Si supply. These gases to supply Si may be diluted with an inert gas such as H₂, He, Ar, and Ne, if necessary. Examples of the gas used in the invention to supply halogen atoms include halogen gases and gaseous or gasifiable halides, interhalogen compounds and halogen-substituted silane derivatives. Additional examples include gaseous or gasifiable halogen-containing silicohydrides composed of silicon atoms (Si) and halogen atoms (X). The halogen compounds that can be suitably used in the present invention include halogen gases such as fluorine, chlorine, bromine, and iodine; and interhalogen compounds such as BrF, ClF, ClF₃, BrF₅, BrF₃, IF₃, IF₇, ICl, and IBr. Examples of the halogen-containing silicon compounds, or halogen-substituted silane compounds, include halogenated silicon such as SiF₄, Si₂F₆, SiCl₄, and SiBr₄. In the case where the halogen-containing silicon compound is used to form the light receiving member for electrophotography by the glow discharge method or HRCVD method, it is possible to form the upper layer composed of non-Si(H,X) containing halogen atoms on the lower layer without using a silicohydride gas to supply silicon atoms. In the case where the upper layer containing halogen atoms is formed by the glow discharge or HRCVD method, a silicon halide gas is used to supply silicon atoms. The silicon halide gas may be mixed with hydrogen or a hydrogen-containing silicon compound gas to facilitate the introduction of hydrogen atoms (H) at a desired level. The above-mentioned gases may be used individually or in combination with one another at a desired mixing ratio. The raw materials to form the upper layer which are used in addition to the above-mentioned halogen compounds or halogen-containing silicon compounds include gaseous or gasifiable hydrogen halides such as HF, HCl, HBr, and HI; and halogen-substituted silicohydrides such as SiH₃F, SiH₂F₂, SiHF₃, SiH₂I₂, SiH₂Cl₂, SiHCl₃, SiH₂Br₂, and SiHBr₃. Among these substances, the hydrogen-containing halides are a preferred halogen-supply gas because they supply the upper layer with halogen atoms (X) as well as hydrogen atoms (H) which are very effective for the control of electric or photoelectric characteristics. The introduction of hydrogen atoms (H) into the upper layer may also be accomplished in another method by inducing discharge in the deposition chamber containing a silicohydride such as SiH₄, Si₂H₆, Si₃H₈, and Si₄H₁₀ and a silicon compound to supply silicon atoms (Si). The amount of hydrogen atoms (H) and/or halogen atoms (X) to be introduced into the upper layer may be controlled by regulating the temperature of the support, the electric power for discharge, and the amount of raw materials for hydrogen atoms and halogen atoms (X) to be introduced into the deposition chamber. The upper layer may contain atoms (M) to control conductivity, for example, Group III atoms, Group V atoms, and Group VI atoms. This is accomplished by introducing into the deposition chamber the raw materials to form the upper layer together with a raw material to introduce Group III atoms, a raw material to introduce Group V atoms, or a raw material to introduce Group VI atoms. The raw material to introduce Group III atoms, the raw material to introduce Group V atoms, or the raw material to introduce Group VI atoms may be gaseous at normal temperature and under normal pressure or gasifiable under the layer forming conditions. The raw material to introduce Group III atoms, especially boron atoms, include, for example, boron hydrides such as B₂H₆, B₄H₁₀, B₅H₉, B₅H₁₁, B₆H₁₀, B₆H₁₂, and B₆H₁₄, or boron halides such as BF₃, BCl₃, and BBr₃. Additional examples are AlCl₃, GaCl₃, Ga(CH₃)₃, InCl₃, and TlCl₃. The raw material to introduce Group V atoms, especially phosphorus atoms, include, for example, phosphorus hydrides such as PH₃ and P₃H₄, and phosphorus halide such as PH₄I, PF₃, PF₅, PCl₃, PCl₅, PBr₃, PBr₅, and PI₃. Other examples include AsH₃, AsF₃, AsCl₃, AsBr₃, AsF₅, SbH₃, SbF₃, SbF₅, SbCl₃, SbCl₅, BiH₃, BiCl₃, and BiBr₃. The raw material to introduce Group VI atoms includes, for example, gaseous or gasifiable substances such as H₂S, SF₄, SF₆, SO₂, SO₂F₂, COS, CS₂, CH₃SH, C₂H₅SH, C₄H₄S, (CH₃)₂S, and S(C₂H₅)₂S. Other examples include gaseous or gasifiable substances such as SeH₂, SeF₆, (CH₃)₂Se, (C₂H₅)₂Se, TeH₂, TeF₆, (CH₃)₂Te, and (C₂H₅)₂Te. These raw materials to introduce atoms (M) to control conductivity may be diluted with an inert gas such as H₂, He, Ar, and Ne. According to the present invention, the upper layer may contain carbon atoms (C) or nitrogen atom (N) or oxygen atoms (O). This is accomplished by introducing into the deposition chamber the raw materials to form the upper layer, together with a raw material to introduce carbon atoms (C), or a raw material to introduce nitrogen atoms (N), or a raw material to introduce oxygen atoms (O). Raw materials to introduce carbon atoms (C), nitrogen atoms (N), or oxygen atoms (O) may be in the gaseous form at normal temperature and under normal pressure or may be readily gasifiable under the layer forming conditions. A raw material gas to introduce carbon atoms (C) includes saturated hydrocarbons having 1 to 4 carbon atoms, ethylene series hydrocarbons having 2 to 4 carbon atoms and acetylene series hydrocarbons having 2 to 3 carbon atoms. Examples of the saturated hydrocarbons include methane (CH₄), ethane (C₂H₆), propane (C₃H₆), n-butane ( n -C₄H₁₀), and pentane (C₅H₁₂). Examples of ethylene series hydrocarbons include ethylene (C₂H₄), propylene (C₃H₆), butene-1 (C₄H₈), butene-2 (C₄H₈), isobutylene (C₄H₈), and pentene (C₅H₁₀). Examples of acetylene series hydrocarbons include, acetylene (C₂H₂), methylacetylene (C₃H₄), and butyne (C₄H₆). Additional examples include halogenated hydrocarbons such as CF₄, CCl₄, and CH₃CF₃, which introduce carbon atoms (C) as well as halogen atoms (X). Examples of the raw materials gas to introduce nitrogen atoms (N) include nitrogen and gaseous or gasifiable nitrogen compounds (e.g., nitrides and azides) which are composed of nitrogen and hydrogen, such as ammonia (NH₃), hydrazine (H₂NNH₂), hydrogen azide (HN₃), and ammonium azide (NH₄N₃). Additional examples include halogenated nitrogen compounds such as nitrogen trifluoride (F₃N) and nitrogen tetrafluoride (F₄N₂), which introduce nitrogen atoms (N) as well as halogen atoms (X). Examples of the raw material gas to introduce oxygen atoms (O) can include oxygen (O₂), ozone (O₃), nitrogen monoxide (NO), nitrogen dioxide (NO₂), dinitrogen oxide (N₂O), dinitrogen trioxide (N₂O₃), trinitrogen tetroxide (N₃O₄), dinitrogen pentoxide (N₂O₅), and nitrogen trioxide (NO₃). Additional examples include lower siloxanes such as disiloxane (H₃SiOSiH₃) and trisiloxane (H₃SiOSiH₂OSiH₃) which are composed of silicon atoms (Si), oxygen atoms (O), and hydrogen atoms (H). The upper layer may contain germanium atoms (Ge) or tin atoms (Sn). This is accomplished by introducing into the deposition chamber the raw materials to form the upper layer together with a raw material to introduce germanium atoms (Ge) or tin atoms (Sn) in a gaseous form. The raw material to supply germanium atoms (Ge) or the raw material to supply tin atoms (Sn) may be gaseous at normal temperature and under normal pressure or gasifiable under the layer forming conditions. The substance that can be used as a gas to supply germanium atoms (Ge) include, gaseous or gasifiable germanium hydrides such as GeH₄, Ge₂H₆, Ge₃H₈, and Ge₄H₁₀. Among them, GeH₄, Ge₂H₆, and Ge₃H₈ are preferable from the standpoint of easy handling at the time of layer forming and the efficient supply of germanium atoms (Ge). Other effective raw materials to form the upper layer include gaseous or gasifiable germanium hydride-halides such as GeHF₃, GeH₂F₂, GeH₃F, GeHCl₃, GeH₂Cl₂, GeH₃Cl, GeHBr₃, GeH₂Br₂, GeH₃Br, GeHI₃, GeH₂I₂, and GeH₃I, and germanium halides such as GeF₄, GeCl₄, GeBr₄, GeI₄, GeF₂, GeCl₂, GeBr₂, and GeI₂. The substance that can be used as a gas to supply tin atoms (Sn) can include gaseous or gasifiable tin hydrides such as SnH₄, Sn₂H₆, Sn₃H₈, and Sn₄H₁₀. Among them, SnH₄, Sn₂H₆, and Sn₃H₈ are preferable from the standpoint of easy handling at the time of layer forming and the efficient supply of tin atoms (Sn). Other effective raw materials to form the upper layer include gaseous or gasifiable tin halide-hydrides such as SnHF₃, SnH₂F₂, SnH₃F, SnHCl₃, SnH₂Cl₂, SnH₃Cl, SnHBr₃, SnH₂Br₂, SnH₃Br, SnHI₃, SnH₂I₂, and SnH₃I, and tin halides such as SnF₄, SnCl₄, SnBr₄, SnI₄, SnF₂, SnCl₂, SnBr₂, and SnI₂. The upper layer may contain magnesium atoms (Mg). This is accomplished by introducing into the deposition chamber the raw materials to form the upper layer together with a raw material to introduce magnesium atoms (Mg) in a gaseous form. The raw material to supply magnesium atoms (Mg) may be gaseous at normal temperature and normal pressure or gasifiable under the layer forming conditions. The substance that can be used as a gas to supply magnesium atoms (Mg) can include organometallic compounds containing magnesium atoms (Mg). Bis(cyclopentadienyl)magnesium (II) complex salt (Mg(C₅H₅)₂ is preferable from the standpoint of easy handling at the time of layer forming and the efficient supply of magnesium atoms (Mg). The gas to supply magnesium atoms (Mg) may be diluted with an inert gas such as H₂, He, Ar, and Ne, if necessary. The upper layer may contain copper atoms (Cu). This is accomplished by introducing, into the deposition chamber the raw materials to form the upper layer together with a raw material to introduce copper atoms (Cu) in a gaseous form. The raw material to supply copper atoms (Cu) may be gaseous at normal temperature and under normal pressure or gasifiable under the layer forming conditions. The substance that can be used as a gas to supply copper atoms (Cu) can include organometallic compounds containing copper atoms (Cu). Copper (II) bisdimethylglyoximate Cu(C₄H₇N₂O₂)₂ is preferable from the standpoint of easy handling at the time of layer forming and the efficient supply of copper atoms (Cu). The gas to supply copper atoms (Cu) may be diluted with an inert gas such as H₂, He, Ar, and Ne, if necessary. The upper layer may contain sodium atoms (Na) or yttrium atoms (Y) manganese atoms (Mn) or zinc atoms (Zn). This is accomplished by introducing into the deposition chamber the raw materials to form the upper layer together with a raw material to introduce sodium atoms (Na) or yttrium atoms (Y) or manganese atoms (Mn) or zinc atoms (Zn). The raw material to supply sodium atoms (Na) or yttrium atoms (Y) or manganese atoms (Mn) or zinc atoms (Zn) may be gaseous at normal temperature and under normal pressure or gasifiable under the layer forming conditions. The substance that can be used as a gas to supply sodium atoms (Na) includes sodium amine (NaNH₂) and organometallic compounds containing sodium atoms (Na). Among them, sodium amine (NaNH₂) is preferable from the standpoint of easy handling at the time of layer forming and the efficient supply of sodium atoms (Na). The substance that can be used as a gas to supply yttrium atoms (Y) can include organometallic compounds containing yttrium atoms (Y). Triisopropanol yttrium Y( Oi -C₃H₇)₃ is preferably from the standpoint of easy handling at the time of layer forming and the efficient supply of yttrium atoms (Y). The substance that can be used as a gas to supply manganese atoms (Mn) includes organometallic compounds containing manganese atoms (Mn). Monomethylpentacarbonyl manganese Mn(CH₃)(CO)₅ is preferably from the standpoint of easy handling at the time of layer forming and the efficient supply of manganese atoms (Mn). The substance that can be used as a gas to supply zinc atoms (Zn) include organometallic compounds containing zinc atoms (Zn). Diethyl zinc Zn(C₂H₅)₂ is preferably from the standpoint of easy handling at the time of layer forming and the efficient supply of zinc atoms (Zn). The gas to supply sodium atoms (Na) or yttrium atoms (Y) or manganese atoms (Mn) or zinc atoms (Zn) may be diluted with an inert gas such as H₂, He, Ar, and Ne, if necessary. According to the present invention, the upper layer should have a thickness of 1∼130 µm, preferably, 3∼100 µm, and, most desirably, 5∼60 µm from the standpoint of the desired electrophotographic characteristics and economic effect. In order to form the upper layer of non-Si(H,X) which has the characteristic properties to achieve the object of the present invention, it is necessary to properly establish the gas pressure in the deposition chamber and the temperature of the support. The gas pressure in the deposition chamber should be properly selected according to the desired layer. It is usually 1 x 10⁻⁵ ∼ 10 Torr, preferably, 1 x 10⁻⁴ ∼ 3 Torr, and most desirably, 1 x 10⁻⁴ ∼ 1 Torr. In the case where the upper layer is made of A-Si(H,X) as non-Si(H,X) the support temperature (Ts) should be properly selected according to the desired layer. It is usually 50∼400°C, and preferably 100∼300°C. In the case where the upper layer is made of poly-Si(H,X) as non-Si(H,X), the upper layer may be formed in various manners as exemplified below. According to one method, the support temperature is established at 400∼600°C and a film is deposited on the support by the plasma CVD method. According to another method, an amorphous film is formed on the support by the plasma CVD method while keeping the support temperature at 250°C, and the amorphous film is made "poly" by annealing. The annealing is accomplished by heating the support at 400∼600°C for about 5∼30 minutes, or irradiating the support with laser beams for about 5∼30 minutes. In order to form the upper layer of non-Si(H,X) by the glow discharge method according to the present invention, it is necessary to properly establish the discharge electric power to be supplied to the deposition chamber according to the desired layer. It is usually 5 x 10⁻⁵ ∼ 10 W/cm³, preferably 5 x 10⁻⁴ ∼ 5 W/cm³, and most desirably 1 x 10⁻³ ∼ 2 x 10⁻¹ W/cm³. The gas pressure of the deposition chamber, the temperature of the support and the discharge electric power to be supplied to the deposition chamber mentioned above should be established interdependently so that the upper layer having the desired characteristic properties can be formed. Effect of the invention The light receiving member for electrophotography pertaining to the present invention, has a specific layer construction as mentioned above. Therefore, it is completely free of the problems involved in the conventional light receiving member for electrophotography which is made of A-Si. It exhibit outstanding electric characteristics, optical characteristics, photoconductive characteristics, image characteristics, durability, and adaptability to use environments. According to the present invention, the lower layer contains aluminum atoms (Al), silicon atoms (Si), and hydrogen atoms (H) in such a manner that their distribution is uneven across the layer thickness. This improves the injection of electric charge (photocarrier) across the aluminum support and the upper layer, and also improves the structural continuity of the constituting elements in the aluminum support and the upper layer. This in turn leads to the improvement of image characteristics such as dots and coarse image and the reproduction of high-quality images having a sharp half tone and high resolution. The above-mentioned layer structure prevents the occurrence of defective images caused by impactive mechanical pressure applied for a short time to the light receiving member for electrophotography and also prevents the peeling of the non-Si(H,X) film, improving the durability. In addition, the layer structure relieves the stress resulting from the difference of the aluminum support and the non-Si(H,X) film in the coefficient of thermal expansion, preventing the occurrence of cracking and peeling in the non-Si(H,X) film. This leads to improved yields in production. According to the present invention, the upper layer has a layer region in contact with the lower layer, said layer region containing either germanium atoms or tin atoms. This improves the adhesion of the upper layer to the lower layer and prevents occurrence of defective images and the peeling of the film of non-Si(H,X), which leads to the improvement of durability. In addition, it effectively absorbs lights of long wavelengths (such as semiconductor laser) which are not absorbed during their passage through the surface layer of the upper layer to the lower layer. Thus it prevents the occurrence of interference resulting from reflection at the interface between the upper layer and the lower layer and/or at the surface of the support. This leads to a distinct improvement of image quality. According to the present invention, the lower layer contains aluminum atoms (Al), silicon atoms (Si), hydrogen atoms (H), and atoms (Mc) to control image quality. This improves the injection of electric charge (photocarrier) across the aluminum support and the upper layer, and also improves the transferability of electric charge (photocarrier) in the lower layer. This in turn leads to the improvement of image characteristics such as coarse image and the reproduction of high-quality images having a sharp half tone and high resolution. According to the present invention, the lower layer also contains halogen atoms which compensate for the unbonded hands of silicon atoms and aluminum atoms, thereby providing a structurally stable state. This, in combination with the effect produced by the unevenly distributed silicon atoms, aluminum atoms, and hydrogen atoms, greatly improves the image characteristics such as coarse image and dots. According to the present invention, the lower layer also contains at least either of germanium atoms (Ge) and tin atoms (Sn). This improves the injection of electric charge (photocarrier) across the aluminum support and the upper layer, the adhesion, and the transferability of electric charge in the lower layer. This in turn leads to the remarkable improvement in image characteristics and durability. According to the present invention, the lower layer also contains at least one kind of atoms selected from alkali metal atoms, alkaline earth metal atoms, and transition metal atoms. This contributes to the dispersion of hydrogen atoms and halogen atoms contained in the lower layer, and also prevents the peeling of film which occurs after use for a long time as the result of aggregation of hydrogen atoms and/or halogen atoms. This also improves the injection of electric charge (photocarrier) across the aluminum support and the upper layer, the adhesion, and the transferability of electric charge in the lower layer. This in turn leads to the remarkable improvement in image characteristics and durability and also to the stable production and stable quality. PREFERRED EMBODIMENT OF THE INVENTION The invention will be described in more detail with reference to the following examples, which are not intended to limit the scope of the invention. Example 1 A light receiving member for electrophotography pertaining to the present invention was produced by the high-frequency ("RF" for short hereinafter) glow discharge decomposition method. Fig. 37 shows the apparatus for producing the light receiving member for electrophotography by the RF glow discharge decomposition method, said apparatus being composed of the raw material gas supply device 1020 and the deposition unit 1000 . In Fig. 37, there are shown gas cylinders 1071 , 1072 , 1073, 1074, 1075, 1076 and 1077 , and a closed vessel 1078 . They contain raw material gases to form the layers according to the invention. The cylinder 1071 contains SiH₄ gas (99.99% pure); the cylinder 1072 contains H₂ gas (99.9999% pure); the cylinder 1073 contains CH₄ gas (99.999% pure); the cylinder 1074 contains GeH₄ gas (99.999% pure); the cylinder 1075 contains B₂H₆ gas (99.999% pure) diluted with H₂ gas ("B₂H₆/H₂" for short hereinafter); the cylinder 1076 contains NO gas (99.9% pure); the cylinder 1077 contains He gas (99.999% pure); and the closed vessel 1078 contains AlCl₃ (99.99% pure). In Fig. 37, there is shown the cylindrical aluminum support 1005 , 108 mm in outside diameter, having the mirror-finished surface. With the valves 1051∼1057 of the cylinders 1071∼1077 , the inlet valves 1031∼1037 , and the leak valve 1015 of the deposition chamber 1001 closed, and with the outlet valves 1041∼1047 and the auxiliary valve 1018 open, the main valve 1016 was opened and the deposition chamber 1001 and the gas piping were evacuated by a vacuum pump (not shown). When the vacuum gauge 1017 registered 1 x 10⁻³ Torr, the auxiliary valve 1018 , and the outlet valves 1041∼1047 were closed. After that, the valves 1051∼1057 were opened to introduce SiH₄ gas from the cylinder 1071 , H₂ gas from the cylinder 1072 , CH₄ gas from the cylinder 1073 , GeH₄ gas from the cylinder 1074 , B₂H₆/H₂ gas from the cylinder 1075 , NO gas from the cylinder 1076 , and He gas from the cylinder 1077 . The pressure of each gas was maintained at 2 kg/cm² by means of the pressure regulators 1061∼1067 . Then, the inlet valves 1031∼1037 were slowly opened to introduce the respective gases into the mass flow controller 1021∼1027 . Since He gas from the cylinder 1077 passes through the closed vessel containing AlCl₃, 1078 , the AlCl₃ gas diluted with He gas ("AlCl₃/He" for short hereinafter) is introduced into the mass flow controller 1027 . The cylindrical aluminum support 1005 placed in the deposition chamber 1001 was heated to 250°C by the heater 1014 . Now that the preparation for film forming was completed as mentioned above, the lower layer and upper layer were formed on the cylindrical aluminum support 1005 . The lower layer was formed as follows: The outlet valves 1041, 1042 , and 1047 , and the auxiliary valve 1018 were opened slowly to introduce SiH₄ gas, H₂ gas, and AlCl₃/He gas into the deposition chamber 1001 through the gas discharge hole 1009 on the gas introduction pipe 1008 . The mass flow controllers 1021, 1022 , and 1027 were adjusted so that the flow rate of SiH₄ gas was 50 SCCM, the flow rate of H₂ gas was 10 SCCM, and the flow rate of AlCl₃/He gas was 120 SCCM. The pressure in the deposition chamber 1001 was maintained at 0.4 Torr as indicated by the vacuum gauge 1017 by adjusting the opening of the main valve 1016 . Then, the output of the RF power source (not shown) was set to 5 mW/cm³, and RF power was applied to the deposition chamber 1001 through the high-frequency matching box 1012 in order to bring about RF glow discharge, thereby forming the lower layer on the aluminum support. While the lower layer was being formed, the mass flow controllers 1021, 1022 , and 1027 were controlled so that the flow rate of SiH₄ gas remained constant at 50 SCCM, the flow rate of H₂ gas increased from 10 SCCM to 200 SCCM at a constant ratio, and the flow rate of AlCl₃/He decreased from 120 SCCM to 40 SCCM at a constant ratio. When the lower layer became 0.05 µm thick, the RF glow discharge was suspended, and the outlet valves 1041, 1042, and 1047 and the auxiliary valve 1018 were closed to stop the gases from flowing into the deposition chamber 1001 . The formation of the lower layer was completed. The first layer region of the upper layer was formed as follows: The outlet valves 1041, 1042 , and 1044 and the auxiliary valve 1018 were slowly opened to introduce SiH₄ gas, H₂ gas, and GeH₄ gas into the deposition chamber 1001 through the gas discharge hole 1009 on the gas introduction pipe 1008 . The mass flow controllers 1021 , 1022 , and 1024 were adjusted so that the flow rate of SiH₄ gas was 100 SCCM, the flow rate of H₂ gas was 100 SCCM, and the flow rate of GeH₄ gas was 50 SCCM. The pressure in the deposition chamber 1001 was maintained at 0.4 Torr as indicated by the vacuum gauge 1017 by adjusting the opening of the main valve 1016 . Then, the output of the RF power source (not shown) was set to 10 mW/cm³, and RF power was applied to the deposition chamber 1001 through the high-frequency matching box 1012 in order to bring about RF glow discharge, thereby forming the first layer region of the upper layer on the lower layer. While the first layer region of the upper layer was being made, the mass flow controllers 1021 , 1022 , and 1024 were adjusted so that the flow rate of SiH₄ gas was 100 SCCM, the flow rate of H₂ gas was constant at 100 SCCM, and the flow rate of GeH₄ gas was constant at 50 SCCM for 0.7 µm at the lower layer side and the flow rate of GeH₄ decreased from 50 SCCM to 0 SCCM at a constant ratio for 0.3 µm at the obverse side. When the first layer region of the upper layer became 1 µm thick, the RF glow discharge was suspended, and the outlet valves 1041, 1042 , and 1044 and the auxiliary valve 1018 were closed to stop the gases from flowing into the deposition chamber 1001 . The formation of the first layer region of the upper layer was completed. The second layer region of the upper layer was formed as follows: The outlet valves 1041, 1042, 1045 , and 1046 and the auxiliary valve 1018 were slowly opened to introduce SiH₄ gas, H₂ gas, B₂H₆/H₂ gas, and NO gas into the deposition chamber 1001 through the gas discharge hole 1009 on the gas introduction pipe 1008 . The mass flow controllers 1021 , 1022, 1025, and 1026 were adjusted so that the flow rate of SiH₄ gas was 100 SCCM, the flow rate of H₂ gas was 100 SCCM, the flow rate of B₂H₆/H₂ gas was 800 ppm for SiH₄ gas, and the flow rate of NO gas was 10 SCCM. The pressure in the deposition chamber 1001 was maintained at 0.4 Torr as indicated by the vacuum gauge 1017 by adjusting the opening of the main valve 1016 . Then, the output of the RF power source (not shown) was set to 10 mW/cm³, and RF power was applied to the deposition chamber 1001 through the high-frequency matching box 1012 in order to bring about RF glow discharge, thereby forming the second layer region on the first layer region of the upper layer. While the second layer region of the upper layer was being made, the mass flow controllers 1021, 1022 , 1025 , and 1026 were adjusted so that the flow rate of SiH₄ gas was 100 SCCM, the flow rate of H₂ gas was at 100 SCCM, the flow rate of B₂H₆/H₂ gas was constant at 800 ppm for SiH₄ gas, and the flow rate of NO gas was constant at 10 SCCM for 2 µm at the lower layer side and the flow rate of NO gas decreased from 10 SCCM to 0 SCCM at a constant ratio for 1 µm at the obverse side. When the second layer region of the upper layer became 3 µm thick, the RF glow discharge was suspended, and the outlet valves 1041, 1042, 1045 , and 1043 and the auxiliary valve 1018 were closed to stop the gases from flowing into the deposition chamber 1001 . The formation of the second layer region of the upper layer was completed. The third layer region of the upper layer was formed as follows: The outlet valves 1041 and 1042 and the auxiliary valve 1018 were slowly opened to introduce SiH₄ gas and H₂ gas into the deposition chamber 1001 through the gas discharge hole 1009 on the gas introduction pipe 1008 . The mass flow controllers 1021 and 1022 were adjusted so that the flow rate of SiH₄ gas was 300 SCCM and the flow rate of H₂ gas was 300 SCCM. The pressure in the deposition chamber 1001 was maintained at 0.5 Torr as indicated by the vacuum gauge 1017 by adjusting the opening of the main valve 1016 . Then, the output of the RF power source (not shown) was set to 15 mW/cm³, and RF power was applied to the deposition chamber 1001 through the high-frequency matching box 1012 in order to bring about RF glow discharge, thereby forming the third layer region of the upper layer on the second layer region of the upper layer. When the third layer region of the upper layer became 20 µm thick, the RF glow discharge was suspended, and the outlet valves 1041 and 1042 and the auxiliary valve 1018 were closed to stop the gases from flowing into the deposition chamber 1001 . The formation of the third layer region of the upper layer was completed. The fourth layer region of the upper layer was formed as follows: The outlet valves 1041 and 1043 and the auxiliary valve 1018 were slowly opened to introduce SiH₄ gas and CH₄ gas into the deposition chamber 1001 through the gas discharge hole 1009 on the gas introduction pipe 1008 . The mass flow controllers 1021 and 1023 were adjusted so that the flow rate of SiH₄ gas was 50 SCCM and the flow rate of CH₄ gas was 500 SCCM. The pressure in the deposition chamber 1001 was maintained at 0.4 Torr as indicated by the vacuum gauge 1017 by adjusting the opening of the main valve 1016 . Then, the output of the RF power source (not shown) was set to 10 mW/cm³, and RF power was applied to the deposition chamber 1001 through the high-frequency matching box 1012 in order to bring about RF glow discharge, thereby forming the fourth layer region of the upper layer on the third layer region of the upper layer. When the fourth layer region of the upper layer became 0.5 µm thick, the RF glow discharge was suspended, and the outlet valves 1041 and 1043 and the auxiliary valve 1018 were closed to stop the gases from flowing into the deposition chamber 1001 . The formation of the fourth layer region of the upper layer was completed. Table 1 shows the conditions under which the light receiving member for electrophotography was prepared as mentioned above. It goes without saying that all the valves were kept closed completely except those for the gases necessary to form the individual layers. Before the switching of the gas, the system was completely evacuated, with the outlet valves 1041∼1047 closed and the main valve and the auxiliary valve 1018 open, to prevent the gases from remaining in the deposition chamber 1001 and the piping leading from the outlet valves 1041 ∼ 1047 to the deposition chamber 1001 . While the layer was being formed, the cylindrical aluminum support 1005 was turned at a prescribed speed by a drive unit (not shown) to ensure uniform deposition. Comparative Example 1 A light receiving member for electrophotography was prepared in the same manner as in Example 1, except that H₂ gas was not used when the lower layer was formed. Table 2 shows the conditions under which the light receiving member for electrophotography was prepared. The light receiving members for electrophotography prepared in Example 1 and Comparative Example 1 were evaluated for electrophotographic characteristics under various conditions by running them on an experimental electrophotographic apparatus which is a remodeled version of Canon's duplicating machine NP-7550. The light receiving member for electrophotography produced in Example 1 provided images of very high quality which are free of interference fringes, especially in the case where the light source is long wavelength light such as semiconductor laser. The light receiving member for electrophotography produced in Example 1 gave less than three-quarters the number of dots (especially those smaller than 0.1 mm in diameter) in the case of the light receiving member for electrophotography produced in Comparative Example 1. In addition, the degree of coarseness was evaluated by measuring the dispersion of the image density at 100 points in a circular region 0.05 mm in diameter. The light receiving member for electrophotography produced in Example 1 gave less than two-thirds the dispersion in the case of the light receiving member for electrophotography produced in Comparative Example 1. It was also visually recognized that the one in Example 1 was superior to the one in Comparative Example 1. The light receiving member for electrophotography was also tested for whether it gives defective images or it suffers the peeling of the light receiving layer when it is subjected to an impactive mechanical pressure for a comparatively short time. This test was carried out by dropping stainless steel balls 3.5 mm in diameter onto the surface of the light receiving member for electrophotography from a height of 30 cm. The probability that cracking occurs in the light receiving layer was measured. The light receiving member for electrophotography in Example 1 gave a probability smaller than three-fifths that of the light receiving member for electrophotography in Comparative Example 1. As mentioned above, the light receiving member for electrophotography in Example 1 was superior to the light receiving member for electrophotography in Comparative Example 1. EXAMPLES 2-360 In each of the following examples, a light receiving member was produced in the same manner as in the indicated Example except that the conditions of production are as set out below and as indicated in the relevant Table. The Remarks column identifies the significant change in the method of production to which attention is directed. Where an Example is is set out later in full and not in abbreviated form, this is also indicated. In each Example evaluation was carried out using the procedure of Example 1 or as otherwise indicated, and the light receiving member was found to exhibit improved performance in respect of dots, coarseness and layer peeling. The purity of the various gases used was as follows: He - 99.9999% N₂ - 99.999% Ar - 99.9999% NH₃ -99.999% SiF₄ - 99.999% C₂H₂ - 99.9999% SiH₄ - 99.999% Si₂H₆ -99.99% H₂S/He - 99.999% SnH₄ - 99.999% Example 23 A light receiving member for electrophotography pertaining to the present invention was produced by the microwave glow discharge decomposition method. Fig. 41 shows the apparatus for producing the light receiving member for electrophotography by the microwave glow discharge decomposition method. This apparatus differs from the apparatus for the RF glow discharge decomposition method as shown in Fig. 37 in that the deposition unit 1000 is replaced by the deposition unit 1100 for the microwave glow discharge decomposition method as shown in Fig. 40. In Fig. 40, there is shown the cylindrical aluminum support 1107 , 108 mm in outside diameter, having the mirror-finished surface. As in Example 1, the deposition chamber 1101 and the gas piping were evacuated until the pressure in the deposition chamber 1101 reached 5 x 10⁻⁶ Torr. Subsequently, the gases were introduced into the mass flow controllers 1021∼1027 as in Example 1, except that the NO gas cylinder was replaced by an SiF₄ gas cylinder. The cylindrical aluminum support 1107 placed in the deposition chamber 1001 was heated to 250°C by a heater (not shown). Now that the preparation for film forming was completed as mentioned above, the lower layer and upper layer were formed on the cylindrical aluminum support 1107 . The lower layer was formed as follows: The outlet valves 1041 , 1042 , and 1047 , and the auxiliary valve 1018 were opened slowly to introduce SiH₄ gas, H₂ gas, and AlCl₃/He gas into the plasma generation region 1109 through the gas discharge hole (not shown) on the gas introduction pipe 1110 . The mass flow controllers 1021, 1022, and 1027 were adjusted so that the flow rate of SiH₄ gas was 150 SCCM, the flow rate of H₂ gas was 20 SCCM, and the flow rate of AlCl₃/He gas was 400 SCCM. The pressure in the deposition chamber 1101 was maintained at 0.6 mTorr as indicated by the vacuum gauge (not shown) by adjusting the opening of the main valve (not shown). Then, the output of the microwave power source (not shown) was set to 0.5 W/cm³, and microwave power was applied to the plasma generation region 1109 through the waveguide 1103 and the dielectric window 1102 in order to bring about microwave glow discharge, thereby forming the lower layer on the aluminum support 1107 . While the lower layer was being formed, the mass flow controllers 1021, 1022 , and 1027 were adjusted so that the flow rate of SiH₄ gas remained constant at 150 SCCM, the flow rate of H₂ gas increased from 20 SCCM to 500 SCCM at a constant ratio, and the flow rate of AlCl₃/He decreased from 400 SCCM to 80 SCCM at a constant ratio for the support side (0.01 µm) and the flow rate of AlCl₃/He decreased from 80 SCCM to 50 SCCM at a constant ratio for the upper layer side (0.01 µm). When the lower layer became 0.02 µm thick, the microwave glow discharge was suspended, and the outlet valves 1041, 1042 , and 1047 and the auxiliary valve 1018 were closed to stop the gases from flowing into the plasma generation region 1109 . The formation of the lower layer was completed. The first layer region of the upper layer was formed as follows: The outlet valves 1041, 1042, 1044, 1045, and 1046 , and the auxiliary valve 1018 were slowly opened to introduce SiH₄ gas, H₂ gas, GeH₄ gas, B₂H₆/H₂ gas, and SiF₄ gas into the plasma generation space 1109 through the gas discharge hole (not shown) on the gas introduction pipe 1110 . The mass flow controllers 1021, 1022, 1024, 1025 , and 1026 were adjusted so that the flow rate of SiH₄ gas was 500 SCCM, the flow rate of H₂ gas was 300 SCCM, the flow rate of GeH₄ gas was 100 SCCM, the flow rate of B₂H₆/H₂ gas was 1000 ppm for SiF₄ gas, and the flow rate of SiF₄ gas was 20 SCCM. The pressure in the deposition chamber 1101 was maintained at 0.4 mTorr. Then, the output of the microwave power source (not shown) was set to 0.5 W/cm³, and microwave power was applied to bring about microwave glow discharge in the plasma generation chamber 1109 , as in the case of the lower layer, thereby forming the first layer region (1 µm thick) of the upper layer on the lower layer. The second layer region of the upper layer was formed as follows: The outlet valves 1041, 1042, 1045 , and 1046 and the auxiliary valve 1018 were slowly opened to introduce SiH₄ gas, H₂ gas, B₂H₆/H₂ gas, and SiF₄ gas into the plasma generation space 1109 through the gas discharge hole (not shown) on the gas introduction pipe 1110 . The mass flow controllers 1021, 1022, 1025 , and 1026 were adjusted so that the flow rate of SiH₄ gas was 500 SCCM, the flow rate of H₂ gas was 300 SCCM, the flow rate of B₂H₆/H₂ gas was 1000 ppm for SiH₄ gas, and the flow rate of SiF₄ gas was 20 SCCM. The pressure in the deposition chamber 1101 was maintained at 0.4 mTorr. Then, the output of the microwave power source (not shown) was set to 0.5 W/cm³, and microwave power was applied to bring about microwave glow discharge in the plasma generation region 1109 , thereby forming the second layer region (3 µm thick) on the first layer region of the upper layer. The third layer region of the upper layer was formed as follows: The outlet valves 1041, 1042 , and 1046 and the auxiliary valve 1018 were slowly opened to introduce SiH₄ gas, H₂ gas, and SiF₄ gas into the plasma generation space 1109 through the gas discharge hole (not shown) on the gas introduction pipe 1110 . The mass flow controllers 1021, 1022, and 1026 were adjusted so that the flow rate of SiH₄ gas was 700 SCCM, the flow rate of H₂ gas was 500 SCCM, and the flow rate of SiF₄ gas was 30 SCCM. The pressure in the deposition chamber 1101 was maintained at 0.5 mTorr. Then, the output of the microwave power source (not shown) was set to 0.5 W/cm³, and microwave power was applied to bring about microwave glow discharge in the plasma generation region 1109 , thereby forming the third layer region (20 µm thick) on the second layer region of the upper layer. The fourth layer region of the upper layer was formed as follows: The outlet valves 1041 and 1043 and the auxiliary valve 1018 were slowly opened to introduce SiH₄ gas and CH₄ gas into the plasma generation space 1109 through the gas discharge hole (not shown) on the gas introduction pipe 1110 . The mass flow controllers 1021 and 1023 were adjusted so that the flow rate of SiH₄ gas was 150 SCCM and the flow rate of CH₄ gas was 500 SCCM. The pressure in the deposition chamber 1101 was maintained at 0.3 mTorr. Then, the output of the microwave power source (not shown) was set to 0.5 W/cm³, and microwave power was applied to bring about microwave glow discharge in the plasma generation region 1109 , thereby forming the fourth layer region (1 µm thick) on the third layer region of the upper layer. Table 22 shows the conditions under which the light receiving member for electrophotography was prepared as mentioned above. According to the evaluation carried out in the same manner as in Example 1, it has improved performance for dots, coarseness, and layer peeling as in Example 1. Example 293 A light receiving member for electrophotography pertaining to the present invention was produced by the RF sputtering method for the lower layer and by the RF glow discharge decomposition method for the upper layer. Fig. 42 shows the apparatus for producing the light receiving member for electrophotography by the RF sputtering method, said apparatus being composed of the raw material gas supply unit 1500 and the deposition unit 1501 . In Fig. 42, there is shown a target 1405 composed of Si, Al, and Mg to constitute the lower layer. The atoms of these elements are distributed according to a certain pattern across the thickness. In Fig. 42, there are shown gas cylinders 1408, 1409, and 1410. They contain raw material gases to form the lower layer. The cylinder 1408 contains SiH₄ gas (99.99% pure); the cylinder 1409 contains H₂ gas (99.9999% pure); and the cylinder 1410 contains Ar gas (99.999% pure). In Fig. 42, there is shown the cylindrical aluminum support 1402, 108 mm in outside diameter, having the mirror-finished surface. The deposition chamber 1401 and the gas piping were evacuated in the same manner as in Example 1 until the pressure in the deposition chamber reached 1 x 10⁻⁶ Torr. The gases were introduced into the mass flow controllers 1412 ∼ 1414 in the same manner as in Example 1. The cylindrical aluminum support 1402 placed in the deposition chamber 1401 was heated to 330°C by a heater (not shown). Now that the preparation for film forming was completed as mentioned above, the lower layer was formed on the cylindrical aluminum support 1402 . The lower layer was formed as follows: The outlet valves 1420, 1421 , and 1422 , and the auxiliary valve 1432 were opened slowly to introduce SiH₄ gas, H₂ gas, and Ar gas into the deposition chamber 1401 . The mass flow controllers 1412, 1413 , and 1414 were adjusted so that the flow rate of SiH₄ gas was 30 SCCM, the flow rate of H₂ gas was 5 SCCM, and the flow rate of Ar gas was 100 SCCM. The pressure in the deposition chamber 1401 was maintained at 0.01 Torr as indicated by the vacuum gauge 1435 by adjusting the opening of the main valve 1407 . Then, the output of the RF power source (not shown) was set to 1 mW/cm³, and RF power was applied to the target 1405 and the aluminum support 1402 through the high-frequency matching box 1433 in order to form the lower layer on the aluminum support. While the lower layer was being formed, the mass flow controllers 1412, 1413 , and 1414 were adjusted so that the flow rate of SiH₄ gas remained constant at 30 SCCM, the flow rate of H₂ gas increased from 5 SCCM to 100 SCCM at a constant ratio, and the flow rate of Ar gas remained constant at 100 SCCM. When the lower layer became 0.05 µm thick, the RF glow discharge was suspended, and the outlet valves 1420, 1421 , and 1422 and the auxiliary valve 1432 were closed to stop the gases from flowing into the deposition chamber 1401 . The formation of the lower layer was completed. While the lower layer was being formed, the cylindrical aluminum support 1402 was turned at a prescribed speed by a drive.unit (not shown) to ensure uniform deposition. The upper layer was formed using the apparatus as shown in Fig. 37 in the same manner as in Example 237 under the conditions shown in Table 287. The thus formed light receiving member for electrophotography was evaluated in the same manner as in Example 237. It was found to have improved performance for dots, coarseness, and layer peeling as in Example 237. The lower layer of the light receiving member for electrophotography obtained in Example 293 was analyzed by SIMS. It was found that silicon atoms, hydrogen atoms, and aluminum atoms are unevenly distributed in the layer thickness as intended. Example 350 A light receiving member for electrophotography was prepared in the same manner as Example 293, except that the target composed of Si, Al, and Mg was replaced by the one composed of Si, Al, and Cu for the lower layer. The conditions for production are shown in Table 343. The upper layer of the light receiving member for electrophotography was prepared by the glow discharge decomposition method using the apparatus shown in Fig. 37 under the conditions shown in Table 343. According to the evaluation carried out in the same manner as in Example 294, it has improved performance for dots, coarseness, and layer peeling as in Example 294. The lower layer of the light receiving member for electrophotography obtained in Example 350 was analyzed by SIMS. It was found that silicon atoms, hydrogen atoms, and aluminum atoms are unevenly distributed in the layer thickness as intended. Example 359 A light receiving member for electrophotography was prepared in the same manner as in Example 293, except that the target composed of Si, Al, and Mg used for the formation of the lower layer was replaced by the one composed of Si, Al, and Mn. The lower layer was formed under the conditions shown in Table 394. The upper layer was formed using the apparatus shown in Fig. 37 under the conditions shown in Table 349. According to the evaluation carried out in the same manner as in Example 351, it has improved performance for dots and layer peeling as in Example 351. The distribution of atoms in the layer thickness direction in the lower layer was examined by SIMS in the same manner as in Example 351. The results are shown in Fig. 43(d). It was found that aluminum atoms, silicon atoms, and hydrogen atoms are distributed as in Example 351. Comparative Example 2 A light receiving member for electrophotography was prepared in the same manner as in Example 36, except that B₂H₆/H₂ gas and H₂ gas were not used when the lower layer was formed. The conditions for production are shown in Table 36. The light receiving members for electrophotography prepared in Example 36 and Comparative Example 2 were evaluated for electrophotographic characteristics under various conditions by running them on an experimental electrophotographic apparatus which is a remodeled version of Canon's duplicating machine NP-7550. The light receiving member for electrophotography produced in Example 36 provided images of very high quality which are free of interference fringes, especially in the case where the light source is long wavelength light such as semiconductor laser. The light receiving member for electrophotography produced in Example 36 gave less than three-quarters the number of dots (especially those smaller than 0.1 mm in diameter) in the case of the light receiving member for electrophotography produced in Comparative Example 2. In addition, the degree of coarseness was evaluated by measuring the dispersion of the image density at 100 points in a circular region 0.05 mm in diameter. The light receiving member for electrophotography produced in Example 36 gave less than a half the dispersion in the case of the light receiving member for electrophotography produced in Comparative Example 2. It was also visually recognized that the one in Example 36 was superior to the one in Comparative Example 2. The light receiving member for electrophotography was also tested for whether it gives defective images or it suffers the peeling of the light receiving layer when it is subjected to an impactive mechanical pressure for a comparatively short time. This test was carried out by dropping stainless steel balls 3.5 mm in diameter onto the surface of the light receiving member for electrophotography from a height of 30 cm. The probability that cracking occurs in the light receiving layer was measured. The light receiving member for electrophotography in Example 36 gave a probability smaller than three-fifths that of the light receiving member for electrophotography in Comparative Example 2. As mentioned above, the light receiving member for electrophotography in Example 36 was superior to the light receiving member for electrophotography in Comparative Example 2. Comparative Example 3 A light receiving member for electrophotography was prepared in the same manner as in Example 71, except that H₂ gas and NO gas were not used when the lower layer was formed. The conditions for production are shown in Table 70. The light receiving members for electrophotography prepared in Example 71 and Comparative Example 3 were evaluated for electrophotographic characteristics under various conditions by running them on an experimental electrophotographic apparatus which is a remodeled version of Canon's duplicating machine NP-7550. The light receiving member for electrophotography produced in Example 71 provided images of very high quality which are free of interference fringes, especially in the case where the light source is long wavelength light such as semiconductor laser. The light receiving member for electrophotography produced in Example 71 gave less than three-quarters the number of dots (especially those smaller than 0.1 mm in diameter) in the case of the light receiving member for electrophotography produced in Comparative Example 3. In addition, the degree of coarseness was evaluated by measuring the dispersion of the image density at 100 points in a circular region 0.05 mm in diameter. The light receiving member for electrophotography produced in Example 71 gave less than a half the dispersion in the case of the light receiving member for electrophotography produced in Comparative Example 3. It was also visually recognized that the one in Example 71 was superior to the one in Comparative Example 3. The light receiving member for electrophotography was also tested for whether it gives defective images or it suffers the peeling of the light receiving layer when it is subjected to an impactive mechanical pressure for a comparatively short time. This test was carried out by dropping stainless steel balls 3.5 mm in diameter onto the surface of the light receiving member for electrophotography from a height of 30 cm. The probability that cracking occurs in the light receiving layer was measured. The light receiving member for electrophotography in Example 71 gave a probability smaller than three-fifths that of the light receiving member for electrophotography in Comparative Example 3. Comparative Example 4 A light receiving member for electrophotography was prepared in the same manner as in Example 126, except that H₂ gas, NO gas, and SiF₄ gas were not used when the lower layer was formed. The conditions for production are shown in Table 124. The light receiving members for electrophotography prepared in Example 126 and Comparative Example 4 were evaluated for electrophotographic characteristics under various conditions by running them on an experimental electrophotographic apparatus which is a remodeled version of Canon's duplicating machine NP-7550. The light receiving member for electrophotography produced in Example 126 provided images of very high quality which are free of interference fringes, especially in the case where the light source is long wavelength light such as semiconductor laser. The light receiving member for electrophotography produced in Example 126 gave less than a half the number of dots (especially those smaller than 0.1 mm in diameter) in the case of the light receiving member for electrophotography produced in Comparative Example 4. In addition, the degree of coarseness was evaluated by measuring the dispersion of the image density at 100 points in a circular region 0.05 mm in diameter. The light receiving member for electrophotography produced in Example 126 gave less than a half the dispersion in the case of the light receiving member for electrophotography produced in Comparative Example 4. It was also visually recognized that the one in Example 126 was superior to the one in Comparative Example 4. The light receiving member for electrophotography was also tested for whether it gives defective images or it suffers the peeling of the light receiving layer when it is subjected to an impactive mechanical pressure for a comparatively short time. This test was carried out by dropping stainless steel balls 3.5 mm in diameter onto the surface of the light receiving member for electrophotography from a height of 30 cm. The probability that cracking occurs in the light receiving layer was measured. The light receiving member for electrophotography in Example 126 gave a probability smaller than two-fifths that of the light receiving member for electrophotography in Comparative Example 4. As mentioned above, the light receiving member for electrophotography in Example 126 was superior to the light receiving member for electrophotography in Comparative Example 4. Comparative Example 5 A light receiving member for electrophotography was prepared in the same manner as in Example 181, except that GeH₂ gas and H₂ gas were not used when the lower layer was formed. Table 178 shows the conditions under which the light receiving member for electrophotography was prepared. The light receiving members for electrophotography prepared in Example 181 and Comparative Example 5 were evaluated for electrophotographic characteristics under various conditions by running them on an experimental electrophotographic apparatus which is a remodeled version of Canon's duplicating machine NP-7550. The light receiving member for electrophotography produced in Example 181 provided images of very high quality which are free of interference fringes, especially in the case where the light source is long wavelength light such as semiconductor laser. The light receiving member for electrophotography produced in Example 181 gave less than two-fifths the number of dots (especially those smaller than 0.1 mm in diameter) in the case of the light receiving member for electrophotography produced in Comparative Example 5. In addition, the degree of coarseness was evaluated by measuring the dispersion of the image density at 100 points in a circular region 0.05 mm in diameter. The light receiving member for electrophotography produced in Example 181 gave less than one-third the dispersion in the case of the light receiving member for electrophotography produced in Comparative Example 5. It was also visually recognized that the one in Example 181 was superior to the one in Comparative Example 5. The light receiving member for electrophotography was also tested for whether it gives defective images or it suffers the peeling of the light receiving layer when it is subjected to an impactive mechanical pressure for a comparatively short time. This test was carried out by dropping stainless steel balls 3.5 mm in diameter onto the surface of the light receiving member for electrophotography from a height of 30 cm. The probability that cracking occurs in the light receiving layer was measured. The light receiving member for electrophotography in Example 181 gave a probability smaller than one-third that of the light receiving member for electrophotography in Comparative Example 5. The lower layer of the light receiving member for electrophotography obtained in Example 181 was analyzed by SIMS. It was found that silicon atoms, hydrogen atoms, and aluminum atoms are unevenly distributed in the layer thickness as intended. As mentioned above, the light receiving member for electrophotography in Example 181 was superior to the light receiving member for electrophotography in Comparative Example 5. Comparative Example 6 A light receiving member for electrophotography was prepared in the same manner as in Example 237, except that H₂ gas and Mg(C₅H₅)₂/He gas were not used when the lower layer was formed. The conditions for production are shown in Table 233. The light receiving members for electrophotography prepared in Example 237 and Comparative Example 6 were evaluated for electrophotographic characteristics under various conditions by running them on an experimental electrophotographic apparatus which is a remodeled version of Canon's duplicating machine NP-7550. The light receiving member for electrophotography produced in Example 237 provided images of very high quality which are free of interference fringes, especially in the case where the light source is long wavelength light such as semiconductor laser. The light receiving member for electrophotography produced in Example 237 gave less than one-third the number of dots (especially those smaller than 0.1 mm in diameter) in the case of the light receiving member for electrophotography produced in Comparative Example 6. In addition, the degree of coarseness was evaluated by measuring the dispersion of the image density at 100 points in a circular region 0.05 mm in diameter. The light receiving member for electrophotography produced in Example 237 gave less than a quarter the dispersion in the case of the light receiving member for electrophotography produced in Comparative Example 6. It was also visually recognized that the one in Example 237 was superior to the one in Comparative Example 6. The light receiving member for electrophotography was also tested for whether it gives defective images or it suffers the peeling of the light receiving layer when it is subjected to an impactive mechanical pressure for a comparatively short time. This test was carried out by dropping stainless steel balls 3.5 mm in diameter onto the surface of the light receiving member for electrophotography from a height of 30 cm. The probability that cracking occurs in the light receiving layer was measured. The light receiving member for electrophotography in Example 237 gave a probability smaller than a quarter that of the light receiving member for electrophotography in Comparative Example 6. The lower layer of the light receiving member for electrophotography obtained in Example 237 was analyzed by SIMS. It was found that silicon atoms, hydrogen atoms, and aluminum atoms are unevenly distributed in the layer thickness as intended. As mentioned above, the light receiving member for electrophotography in Example 237 was superior to the light receiving member for electrophotography in Comparative Example 6. Comparative Example 7 A light receiving member for electrophotography was prepared in the same manner as in Example 294, except that H₂ gas and Cu(C₄H₇N₂O₂)₂/He gas were not used when the lower layer was formed. The conditions for production are shown in Table 289. The light receiving members for electrophotography prepared in Example 294 and Comparative Example 7 were evaluated for electrophotographic characteristics under various conditions by running them on an experimental electrophotographic apparatus which is a remodeled version of Canon's duplicating machine NP-7550. The light receiving member for electrophotography produced in Example 71 provided images of very high quality which are free of interference fringes, especially in the case where the light source is long wavelength light such as-semiconductor laser. The light receiving member for electrophotography produced in Example 249 gave less than one-fourth the number of dots (especially those smaller than 0.1 mm in diameter) in the case of the light receiving member for electrophotography produced in Comparative Example 7. In addition, the degree of coarseness was evaluated by measuring the dispersion of the image density at 100 points in a circular region 0.05 mm in diameter. The light receiving member for electrophotography produced in Example 294 gave less than one-fifth the dispersion in the case of the light receiving member for electrophotography produced in Comparative Example 3. It was also visually recognized that the one in Example 294 was superior to the one in Comparative Example 7. The light receiving member for electrophotography was also tested for whether it gives defective images or it suffers the peeling of the light receiving layer when it is subjected to an impactive mechanical pressure for a comparatively short time. This test was carried out by dropping stainless steel balls 3.5 mm in diameter onto the surface of the light receiving member for electrophotography from a height of 30 cm. The probability that cracking occurs in the light receiving layer was measured. The light receiving member for electrophotography in Example 297 gave a probability smaller than three-fifths that of the light receiving member for electrophotography in Comparative Example 7. As mentioned above, the light receiving member for electrophotography in Example 294 was superior to the light receiving member for electrophotography in Comparative Example 7. Comparative Example 8 A light receiving member for electrophotography was prepared in the same manner as in Example 351, except that H₂ gas was not used when the lower layer was formed. The lower layer of the light receiving member for electrophotography prepared in Example 351 and Comparative Example 8 was analyzed by SIMS (secondary ion mass spectrometer, Model IMS-3F, made by Cameca) to see the distribution of atoms in the layer thickness direction. The results are shown in Figs. 43(a) and 43(b). In Fig. 43, the abscissa represents the time measured, which corresponds to the position in the layer thickness, and the ordinate represents the content of each atom in terms of relative values. Fig. 43(a) shows the distribution of atoms in the layer thickness direction in Example 351. It is noted that aluminum atoms are distributed more in the part adjacent to the support and silicon atoms and hydrogen atoms are distributed more in the part adjacent to the upper layer. Fig. 43(b) shows the distribution of atoms in the layer thickness direction in Comparative Example 8. It is noted that aluminum atoms are distributed more in the part adjacent to the support, silicon atoms are distributed more in the part adjacent to the upper layer, and hydrogen atoms are uniformly distributed throughout the layer. The light receiving members for electrophotography prepared in Example 351 and Comparative Example 8 were evaluated for electrophotographic characteristics under various conditions by running them on an experimental electrophotographic apparatus which is a remodeled version of Canon's duplicating machine. NP-7550. The light receiving member for electrophotography was turned 1000 times, with all the chargers not in operation and the magnet roller as the cleaning roller coated with a positive toner. Images were reproduced from a black original by the ordinary electrophotographic process, and the number of dots which appeared on the images was counted. It was found that the number of dots in Example 351 was less than one-third that in Comparative Example 8. The light receiving member for electrophotography was turned 20 times, with the grid of the separate charger intentionally fouled with massed paper powder so that anomalous discharge is liable to occur. After the removal of the massed paper powder, images were reproduced from a black original, and the number of dots that appeared in the images was counted. It was found that the number of dots in Example 351 was less than two-thirds that in Comparative Example 8. The light receiving member for electrophotography was turned 500,000 times, with a roll made of high-density polyethylene (about 32 mm in diameter and 5 mm thick) pressed against it under a pressure of about 2 kg. The number of occurrence of the peeling of the light receiving layer was examined visually. It was found that the number of occurrence of peeling in Example 351 was less than a half that in Comparative Example 8. As mentioned above, the light receiving members for electrophotography in Example 351 was superior in general to that in Comparative Example 8. Comparative Example 9 A light receiving member for electrophotography was prepared in the same manner as in Example 351, except that the flow rate of Al(CH₃)₃/He gas was changed as shown in Table 345. The conditions for production are shown in Table 344. The light receiving members for electrophotography prepared in Example 352 and Comparative Example 9 were examined for the occurrence of layer peeling, with a roll made of high-density polyethylene pressed against them as in Example 351. The results are shown in Table 345. (The number of occurrence of layer peeling in Example 351 is regarded as 1.) In addition, the content of aluminum atoms in the upper part of the lower layer was determined by SIMS. The results are shown in Table 345. As Table 345 shows, the layer peeling is less liable to occur in the upper region in the lower layer where the content of aluminum atoms is more than 20 atom%. In the following Tables 1 to 349, the mark "*" means increase of a flow rate at constant proportion; the mark "**" means decrease of a flow rate at constant proportion; the term "S-side" means substrate side; the term "UL-side" means upper layer side; the term "LL-side" means lower layer side; the term "U·1st LR-side" means 1st layer region side of the upper layer; the term "U·2nd LR-side" means 2nd layer region side of the upper layer; the term "U·3rd LR-side" means 3rd layer region side of the upper layer; the term "U·4th LR-side" means 4th layer region side of the upper layer; the term "U·5th LR-side" means 5th layer region side of the upper layer; and the term "FS-side" means free surface side of the upper layer.

Claims: A light receiving member having an aluminium support and a multilayered light receiving layer exhibiting photoconductivity formed on said aluminium support, characterised in that said multilayered light receiving layer consists of a lower layer in contact with said support and an upper layer, said lower layer being made of an inorganic material containing at least aluminium atoms, silicon atoms, and hydrogen atoms, and having a part in which said aluminium atoms, silicon atoms, and hydrogen atoms are unevenly distributed across the layer thickness, and said upper layer being made of a non-single-crystal material composed of silicon atoms as the matrix and at least either of hydrogen atoms or halogen atoms, and containing at least either of germanium atoms or tin atoms in a layer region in contact with said lower layer. A light receiving member according to claim 1, wherein the support is of a material selected from pure aluminium, Al-Cu alloy, Al-Mn alloy, Al-Si alloy, Al-Mg alloy, Al-Mg-Si alloy, Al-Zn-Mg alloy, Al-Cu-Mg alloy (duralumin and super duralumin), Al-Cu-Si alloy (lautal), Al-Cu-Ni-Mg alloy (Y alloy and RR alloy), and aluminium powder sintered body (SAP). A light receiving member according to claim 1 or 2 which is in the form of a cylinder. A light receiving member according to claim 3, wherein the cylinder has an outside diameter of 15, 30, 60 or, 80 mm. A light receiving member according to claim 1 or 2, wherein the support is an endless belt. A light receiving member according to any preceding claim, wherein the support has an irregular surface to eliminate image defects caused by interference fringes. A light receiving member according to any preceding claim, wherein the lower layer contains aluminium atoms whose distribution is such that their content decreases across the layer thickness upward from the interface between the lower layer and the aluminium support, and their content is lower than 95 atom % in the vicinity of the interface between the lower layer and the aluminium support and higher then 5 atom % in the vicinity of the interface between the lower layer and the upper layer. A light receiving member according to claim 7, wherein the lower layer contains 10-90 atomic % aluminium atoms. A light receiving member according to claim 7, wherein the lower layer contains 20-80 atomic % aluminium atoms. A light receiving member according to any preceding claim, wherein the amount of silicon atoms in the lower layer is 10-90 atom %. A light receiving member according to any preceding claim, wherein the amount of silicon atoms in the lower layer is 20-80 atom %. A light receiving member according to any preceding claim, wherein the amount of hydrogen in the lower layer is 0.1-50 atom %. A light receiving member according to any preceding claim, wherein the amount of hydrogen in the lower layer is 1-40 atom %. A light receiving member according to any preceding claim, wherein the distribution of aluminium atoms and/or optionally added atoms in the lower layer is such that any of (a) to (f) are obeyed; (a) it remains constant from adjacent the support for most of the layer thickness and then decreases linearly for the remainder of the thickness to the boundary of the layer (Fig 3); (b) it decreases linearly from adjacent the support to the boundary of the layer (Fig 4); (c) it decreases gradually and continuously from adjacent the support to the boundary of the layer (Fig 5) with the rate of decrease rising with distance from the support; (d) it remains constant from adjacent the support for a small part of the layer thickness, sharply decreases and then decreases linearly for the remainder of the thickness up to the boundary of the layer (Fig 6); (e) it remains constant for adjacent the support for a small part of the layer thickness, decreases gradually and continuously but at a falling rate for a further part of the layer thickness and has a constant value for a part of the layer thickness adjacent to the boundary of the layer (Fig 7); (f) it decreases gradually and continuously from adjacent the support to the boundary of the layer with the rate of decrease falling with distance from the support (Fig 8). A light receiving member according to any preceding claim, wherein the across-the-layer thickness concentration of silicon atoms and/or hydrogen atoms and/or optionally contained atoms in the lower layer is such that one of (a) to (h) are obeyed; (a) it increases linearly adjacent the support to a value which remains constant for the remainder of the thickness of the layer (Fig 9); (b) it increases linearly for the whole thickness of the layer (Fig 10); (c) it increases gradually and continuously but at a decreasing rate for the whole thickness of the layer (Fig 11); (d) it increases linearly adjacent the support and at an intermediate thickness increases stepwise to a new constant value (Fig 12); (e) it increases gradually and continuously at an increasing rate until a constant value is reached (Fig 13); (f) it increases gradually and continuously and at an increasing rate for the whole thickness of the layer (Fig 14); (g) it is substantially zero for a part of the layer thickness adjacent to the substrate, gradually increases for a further part of the layer thickness and increases abruptly to a constant value which is maintained for the remainder of the layer thickness (Fig 15); (h) it gradually increases from substantially zero at a position spaced from the substrate for the remainder of the thickness of the layer (Fig 16). A light receiving member as claimed in any preceding claim wherein the lower layer further contains atoms to control image quality. A light receiving member as claimed in claim 16, wherein the atoms to control image quality are atoms, excluding aluminium atoms, belonging to Group III of the periodic table. A light receiving member as claimed in claim 16, wherein the atoms to control image quality are atoms, excluding nitrogen atoms, belonging to Group V of the periodic table. A light receiving member as claimed in claim 16, wherein the atoms to control image quality are atoms, excluding oxygen atoms, belonging to Group VI of the periodic table. A light receiving member according to any of claims 16-19, wherein the content of atoms to control image quality is 1 x 10⁻² - 5 x 10⁴ atom ppm. A light receiving member according to any of claims 16-19, wherein the content of atoms to control image quality is 1 x 10⁻² to 5 x 10³ atom ppm. A light receiving member as claimed in any preceding claim, wherein the lower layer further contains atoms to control durability. A light receiving member as claimed in claim 22, wherein the atoms to control durability are at least one kind of carbon atoms, nitrogen atoms, and oxygen atoms. A light receiving member as claimed in claims 22 or 23, wherein the content of atoms to control durability is 50 - 4 x 10⁵ atom ppm. A light receiving member as claimed in claim 22 or 23, wherein the content of atoms to control durability is 100 - 3000 atom ppm. A light receiving member as claimed in any preceding claim, wherein the lower layer further contains halogen atoms. A light receiving member as claimed in claim 26, wherein the content of halogen atoms is 10 -3x 10⁵ atom ppm. A light receiving member as claimed in claim 26, wherein the content of halogen atoms is 100 - 200,000 atom ppm. A light receiving member as claimed in any preceding claim, wherein the lower layer further contains at least either of germanium atoms or tin atoms. A light receiving member as claimed in claim 29, wherein the lower layer contains 100 - 800,000 atom ppm Ge and/or Sn atoms. A light receiving member as claimed in claim 29, wherein the lower layer contains 500 - 700,000 atom ppm Ge and/or Sn atoms. A light receiving member as claimed in any preceding claim, wherein the lower layer further contains at least one kind of alkali metal atoms, alkaline earth metal atoms, and transition metal atoms. A light receiving member as claimed in claim 32, wherein the alkali metal atoms are magnesium atoms. A light receiving member as claimed in claim 32, wherein the transition metal atoms are copper atoms. A light receiving member as claimed in claim 32, 33 or 34, wherein the content of the above mentioned metals is 100 - 100, 000 atom ppm. A light receiving member as claimed in claim 32, 33 or 34, wherein the content of the above mentioned metals is 500 - 50,000 atom ppm. A light receiving member as claimed in any preceding claim, wherein the lower layer is of thickness 0.03 - 5µm. A light receiving member as claimed in any preceding claim, wherein the lower layer is of thickness 0.01 - 1µm. A light receiving member as claimed in any preceding claim, wherein the lower layer is of thickness of 0.05 - 0.5µm. A light receiving member according to any preceding claim, wherein the upper layer is of thickness 3-100µm. A light receiving member according to any preceding claim, wherein the upper layer is of thickness 5-60µm. A light receiving member according to any preceding claim, wherein the layer region of the upper layer which is in contact with the lower layer further contains atoms (M) to control conductivity and/or carbon atoms (C) and/or nitrogen atoms (N) and/or oxygen atoms (O). A light receiving member according to claim 42, wherein the upper layer has another layer region which may contain at least one kind of atoms (M) to control conductivity, carbon atoms (C), nitrogen atoms (N), oxygen atoms (O), germanium atoms (Ge), and tin atoms (Sn). A light receiving member according to claim 42 or 43, wherein the upper layer has a layer region near the free surface which contains at least one of carbon atoms (C), nitrogen atoms (N), and oxygen atoms (O). An electrophotographic process comprising: (a) applying an electric field to a light receiving member according to any preceding claim, and (b) applying electromagnetic waves to said light receiving member so as to form an electrostatic image.

Inventors: AOIKE TATSUYUKI CANON DAI-ICHI, KARIYA TOSHIMITSU CANON DAI-IC, NIINO HIROAKI CANON DAI-ICHI N, SANO MASAFUMI CANON DAI-ICHI N, YOSHINO TAKEHITO CANON DAI-ICH, AOIKE, TATSUYUKI CANON DAI-ICHI NAGAHAMA-RYO, KARIYA, TOSHIMITSU CANON DAI-ICHI NAGAHAMA-RYO, NIINO, HIROAKI CANON DAI-ICHI NAGAHAMA-RYO, SANO, MASAFUMI CANON DAI-ICHI NAGAHAMA-RYO, YOSHINO, TAKEHITO CANON DAI-ICHI NAGAHAMA-RYO
Applicants: CANON KK, CANON KABUSHIKI KAISHA
Application year: 1988
Main classification: G03G5
IPC codes: G03G5