READ ONLY MEMORY CIRCUIT

Abstract: A read only memory circuit comprises bit lines (18₁ - 18 n ), word lines (13₁ - 13 n ) and cells (S₁₁ - S nn ) connected between the bit lines and word lines. The read only memory circuit also comprises a discharge circuit (30). The discharge circuit is used for discharging all the bit lines except for one of the bit lines designated in order to read out a datum stored in a cell connected to the designated one bit line.

Description: BACKGROUND OF THE INVENTION The present invention generally relates to a read only memory circuit, and in particular to a read only memory circuit in which information stored in a cell designated by an X address and a Y address is read out by precharging a bit line designated by the Y address and selecting a word line designated by the X address. A read only memory (hereafter simply referred to as a ROM) circuit has been widely used in various electronic circuits. In general, a ROM circuit comprises a memory cell array composed of a number of cells, bit lines and word lines. When reading out information stored in a cell, a read address consisting of an X address and a Y address is provided with the ROM. One bit line designated by the supplied Y address is precharged to a predetermined potential (precharge potential). In this state, it is discriminated whether or not the designated bit line and one word line designated by the X address have been electrically coupled with each other by the diode connected therebetween in the forward direction, in other words it is discriminated whether or not the designated bit line is discharged by the designated word line via the diode. When the bit line is discharged and therefore its potential is changed to a predetermined discharge potential, it can be found that information has already been written in the cell, i.e., the cell is in a written state. Alternatively, when information has not been written in the cell, the bit line is not allowed to be discharged. That is, the bit line is maintained at the precharged potential. In the latter case, it may be considered that there is virtually no diode for making electrical contact between the designated bit line and the designated word line. In this manner, information stored in each of cells can be read out. This holds true for a programmable read only memory (hereafter referred to as a PROM). However, the conventional ROM circuit has a disadvantage arising from an address skew. Each of the X and Y addresses is composed of a plurality of bits. The address skew causes some of the bits supplied to the ROM circuit to be delayed. When the address skew occurs, some cells in which information have already been written conduct transitionally or in an instance, and thereby charges are accumulated in semiconductor layers forming the cells. The charges accumulated in the semiconductor layers of the cells have a function of decreasing the speed in which information is read out therefrom. SUMMARY OF THE INVENTION Accordingly, a general object of the present invention is to provide a novel and useful read only memory in which the above disadvantage has been eliminated. A more specific object of the present invention is to provide a read only memory capable of reading out information from a cell at a high speed. Another object of the present invention is to provide a read only memory circuit in which charges are prevented from being accumulated in semiconductor layers of cells which conduct transitionally due to the occurrence of the address skew. The invention is set forth in claim 1. Other objects, features and advantages of the present invention will become apparent from the following detailed description when read in conjunction with the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS FIG.1 is a circuit diagram of a conventional ROM circuit; FIG.2 is a circuit diagram of a portion of the circuit configuration shown in FIG.1; FIG.3A is a plan view of an integrated circuit device where the circuit shown in FIG.1 is implemented; FIG.3B is an cross sectional view taken along a line III B -III B shown in FIG.3A; FIGS.4(A) through 4(G) show signal waveforms at different parts in the circuits shown in FIGS.1 and 2; FIG.5 is a cross sectional view of the integrated circuit device of FIG.3A for explaining accumulation of carriers due to the address skew; FIG.6 is a circuit diagram of a preferred embodiment of the present invention; FIG.7A is a plan view of an integrated circuit device where the circuit shown in FIG.6 is implemented; FIG7B is a cross sectional view taken along a line VII B -VII B shown in FIG.7A; FIGS.8(A) through 8(D) show signal waveforms at different parts in the circuit shown in FIG.6; FIG.9 is a view for explaining delay of the rising of a signal obtained in the circuit of FIG.6; and FIG.10 is a circuit diagram of another embodiment of the present invention. DETAILED DESCRIPTION In order to facilitate the understanding of the present invention, a description is now given of a conventional read only memory circuit, by referring to FIGS.1 through 5. FIG.1 is a circuit diagram of a conventional PROM circuit which is one of variations of ROM circuits. An X address circuit 10 is provided with address bits x₀ to x m . The X address circuit 10 comprises two series-connected inverters 10a and 10b for each address bit. Output signals of the two inverters 10a and 10b for each address bit are supplied to a decoder/driver circuit 11. That is, the decoder/driver circuit 11 receives the address bits x₀ to x m and inverted address bits thereof. The decoder/driver circuit 11 is made up of a plurality of NAND circuits DD₁ to DD n . For simplicity, only one of inputs of the NAND circuit DD₁ is shown and the others are omitted. Output terminals of the NAND circuits DD₁ to DD n are connected to word lines 13₁ to 13 n of a memory cell array 12, respectively. A Y address circuit 14 is provided with address bits y₀ to y m . The Y address circuit 14 comprises two series-connected inverters 14a and 14b for each address bit. The address bits y₀ to y m and inverted address bits thereof are supplied to a decoder/driver circuit 16 provided in an output multiplexing circuit 15. The decoder/driver circuit 16 comprises transistors, gate terminals of which receive corresponding address bits from the Y address circuit 14. Outputs of the decoder/driver circuit 16 are supplied to a multiplex circuit 17, which comprises Schottky transistors. Gate terminals of the Schottky transistors are connected to emitter terminals of related transistors in the decoder/driver circuit 16. The gate terminals of the Schottky transistors in the multiplex circuit 17 are also connected to related bit lines 18₁ to 18 n of the memory cell array 12. Collector terminals of the Schottky transistors in the multiplex circuit 17 are supplied with a positive power Vcc through respective resistors. All the emitter terminals of the transistors in the mutiplex circuit 17 are connected to an input terminal of an output circuit 19. A datum stored in one cell designated by the addresses x₀ to x m and y₀ to y m is read out therefrom and is supplied to an output circuit 19 through the multiplex circuit 17. The output circuit 19 outputs the datum read out at a terminal 20. As illustrated, the output circuit 19 comprises Schottky transistors. FIG.3A is a plan view of the PROM circuit shown in FIG.I, and FIG.3B is a cross sectional view taken along a line III B -III B shown in FIG.3A. The line III B -III B corresponds to the word line 13 n shown in FIG.1. In the illustrated example, each cell is formed in an n⁺-type semiconductor layer 21 formed in a substrate 29. An n⁻-type epitaxial layer 22 is formed in the n⁺-type layer 21. V-shaped groove isolations 23 are formed in the n⁻-type epitaxial layer 22 so as to divide the layer 22 into two parts 22₁ and 22₂. The V-shaped groove isolations 23 are formed by filling insualtion into V-shaped grooves formed in n⁻-epitaxial layer 22. N⁻-type layer parts 22₁ and 22₂ separated by the V-shaped groove isolations 23 comprise p-type diffusion layers 24₁ and 24₂, respectively. N⁺-type diffusion layers 25₁ and 25₂ are formed in the p-type diffusion layers 24₁ and 24₂, respectively. As shown in FIG.1, all the cells connected to the word line 13 n are in the unwritten state. Therefore, each cell connected to the word line 13 n has the n⁺-diffusion layers such as 25₁ and 25₂. The combination of the n⁺-type diffusion layer 25 and the p-type diffusion layer24 forms a diode Da shown in FIG.1, and the combination of the p-type diffusion layer 24 and the n⁻-type epitaxial layer 22 forms a diode Db. When a datum is written in the cell S n1 for example, a reverse bias voltage is applied to the junction of the n⁺-type diffusion layer 25₁ and the p-type diffusion layer 24₁, and thereby the n⁺-type layer 25₁ is destroyed. An insulating film 26 such as SiO₂ is deposited on top of the substrate 29 as shown in FIGS.3A and 3B. The insulating film 26 has a plurality of contact holes 27₁, 27₂, 27₃ and 27₄. Metallization films (not shown) forming bit lines 18₁ and 18₂ are provided so as to cover the contact holes 27₂ and 27₃, and a metallization film forming the word line 13 n is provided so as to cover the contact holes 27₁ and 27₄. As shown in FIG.2, it is assumed that no data has been written in any the cells S₁₁ to S 1n connected to the word line 13₁ in the memory cell array 12 shown in FIG.1, and data have been written in all the cells S₂₁ to S 2n connected to the word line 13₂. When the cell S₁₁ is selected, the bit line 18₁ is charged up to a high level of the potential (approximately 2.2 volts, for example; hereafter simply referred to a H-level), because a datum has not been written in the cell S₁₁ and therefore the current is not allowed to pass through the cell S₁₁. Subsequently, when the cell S₁₂ is selected, the bit line 18₂ is charged up to the H-level, because a datum has not been written therein. At this time, the bit line 18₁ is maintained in the charged-up state, or at the H-level. When the cells S₁₃ to S 1n are sequentially selected in the same way, the bit lines 18₃ to 18 n are switched to and maintained at the H-levels. Thereafter, it is assumed that values of the address bits x₀ to x m are changed and the cell S₃₁ is selected by setting both the address bits x₀ and x₁ to '1'. These changes to the values of the address bits x₀ and x₁ are illustrated in FIGS.4(A) and 4(B). As can be seen from these figures, the rise of the signal waveform of the address bit x₁ lags that of the signal waveform of the address bit x₀ by a time T₁. Such a phenomenon is called the address skew as described before, and the delay time T₁ is called an address skew time. The occurrence of the address skew is an inevitable problem in the practical use of the ROM. The address skew occurring on the address bit x₁ causes the potential of the output signal of the NAND circuit DD₂ to temporarily become a low-level (approximately 0.4 volts, for example; hereafter simply referred to as a L-level). Thereby, the cells S₂₁ to S 2n in which the data have already been written conduct transitionally or in an instant. That is, currents are passed through the cells S₂₁ to S 2n from the bit lines 18₁ to 18 n which are kept at the precharged state. Signal waveforms obtained at the output terminals of the NAND circuits DD₁ and DD₃ are shown in FIGS.4(C) and 4(D), respectively. During the time when the cells S₂₁ to S 2n conduct transitionally due to the address skew, as shown in FIG.5, a number of minority carriers, i.e., electrons in this example are accumulated in the n⁻-type epitaxial layer 22 of each of the cells S₂₁ to S 2n . Thereafter, when the word line 13₂ is selected, it is precharged up to the H-level. In this case, the accumulated minority carriers must be cancelled in order that the word line 13₂ reaches the H-level. Therefore, as shown by a broken line in FIG.4(E), the rise of the signal waveform at the output of the NAND circuit DD₂ is delayed by a time tdw. Correspondingly, the rise of the signal waveform at the bit line 18₁ is delayed as shown by a broken line in FIG.4(F), and the decrease of the signal waveform at the terminal 20 is delayed as shown in FIG.4(G). If the data have been written in a part of the cells S₂₁ to S 2n and the remaining cells are in the unwritten state, the signal waveforms will be changed as indicated by the solid lines in FIGS.4(E) through 4(G). That is, the solid lines show signal waveforms obtained in the case where a smaller number of the cells conducts transitionally due to the address skew. As can be seen from FIGS.4(E) through 4(G), the speed in which the datum is read out from the cell decreases as the number of the cells which conduct temporarily due to the address skew is increased. The present invention intends to eliminate the above problem. A description is given of a preferred embodiment of the present invention with reference to FIGS.6 through 9. The illustrated embodiment is a PROM circuit. In FIG.6, the same constituents as those in the previous figures are denoted by the same reference numerals as those therein. The X address circuit 10 is provided with the address bits x₀ to x m , and the Y address circuit 14 is provided with the address bits y₀ to y m . In FIG.6, an example is illustrated where m = 1 for simplicity. That is, the address of the ROM circuit consists of the address bits x₀ and x₁, and the address bits y₀ and y₁. An output signal y₀ of the inverter 14a to which the address bit y₀ is applied is supplied not only to AND circuits DE₁ and DE₂ provided in the decoder/driver circuit 16 but also to an inverter DC₁ provided in a discharge circuit 30. An output signal y₀ of the inverter 14b which receives the output signal of the inverter 14a is supplied not only to AND circuits DE₃ and DE₄ but also to an inverter DC₂ in the discharge circuit 30. An output signal y₁ of an inverter 14c to which the address bit y₁ is applied is supplied not only to the AND circuits DE₂ and DE₄ in the decoder/driver circuit 16 but also to an inverter DC₃ in the discharge circuit 30. An output signal y₁ of an inverter 14d which receives the output signal of the inverter 14c is supplied not only to the AND circuits DE₁ and DE₃ but also to an inverter DC₄ in the discharge circuit 30. Each of the AND circuits DE₁ to DE₄ is composed of two transistors as shown. Each of the inverters DC₁ to DC₄ is composed of two Schottky transistors Tr₁ and Tr₂, resistors R₁₁ through R₁₄ and a Schottky diode D₁. A cathode terminal of the Schottky diode D₁ is the input terminal of the inverter DC₁, and a collector terminal of the transistor Tr₂ is the output terminal thereof. Base and collector terminals of the transistor Tr₁ and the collector terminal of the transistor Tr₂ are provided with a positive power supply potential Vcc through the resistors R₁₁, R₁₂ and R₁₃, respectively. An emitter terminal of the transistor Tr₁ and a base terminal of the transistor Tr₂ are connected to the ground via the resistor R₁₄. An emitter terminal of the transistor Tr₂ is directly connected to the ground. The discharge circuit 30 has discharge lines 31₁ to 31₄ which are connected to output terminals of the respective inverters DC₁ to DC₄, respectively. The discharge lines 31₁ to 31₄ extend from the inverters DC₁ to DC₄ to the bit line 18₄ via the bit lines 18₁ to 18₃. The bit lines 18₃ and 18₄ are connected to the discharge line 31₁ via diodes D₁₃ and D₁₄. The bit lines 18₁ and 18₂ are connected to the discharge line 31₂ via the diodes D₂₁ and D₂₂. The bit lines 18₁ and 18₃ are connected to the discharge line 31₃ via diodes D₃₁ and D₃₃. The bit lines 18₂ and 18₄ are connected to the discharge line 31₄ via diodes D₄₂ and D₄₄. Positions at which diodes in the discharge circuit 30 are to be connected between discharge lines and bit lines are decided as follows. When the input of the inverter DC₁ is at the H-level, the bit lines 18₁ and 18₂ have a probability of being selected and precharged. This is because the H-level signal supplied to the inverter DC₁ is also supplied to the AND circuits DE₁ and DE₂. In this case, diodes are not provided between the discharge line 31₁ and each of the bit lines 18₁ and 18₂, and are connected between the discharge line 31₁ and each of the bit lines 18₃ and 18₄. When the input signal of the inverter DC₂ is at the H-level, the bit lines 18₃ and 18₄ has a probability of being selected. Therefore, diodes are not provided between the discharge line 31₂ and each of the bit lines 18₃ and 18₄, and are connected between the discharge line 31₂ and each of the bit lines 18₁ and 18₂. FIG.7A is a plan view of the embodiment having the circuit configuration of FIG.6, and FIG.7B is a cross sectional view taken along a line VII B -VII B in FIG.7A. The line VII B -VII B corresponds to the discharge line 31₄ shown in FIG.6. In FIGS.7A and 7B, constituents having functions which are the same as functions of the constituents shown in FIGS.3A and 3B are denoted by the same references. A reference numeral 40 denotes a pattern which is added to the pattern shown in FIG.3A according to the present embodiment. An area 41 within the pattern 40 is used for forming inverters DC₁ through DC₄ in the discharge circuit 30. The other area within the pattern 40 is used for forming the diodes connected between the discharge lines 31₁ to 31₄ and the bit lines 18₁ and 18₄. As shown in FIG.6, no diode is connected between the discharge line 31₄ and the bit line 18₁. Therefore, as shown in FIG.7B, the n⁻-type layer 22₁ has no diffusion region such as the layer 24₁ shown in FIG.3B. In addition, there is no contact hole on top of the layer 22₁. A metallization film (not shown) forming the bit line 18₂ is provided so as to cover a contact hole 51₃, and a metallization film (also not shown) forming the discharge line 31₄ is provided so as to cover a contact holes 51₁ and 51₄. A metallization film (not shown) forming the bit line 18₁ is provided on the insulating film 26 above the n⁻-type layer 22₁. In operation, when the address bits y₀ and y₁ having values of '0' and '1' respectively are supplied to the Y address circuit 14, the cell S₁₁ in which a datum has not been written is selected. In response to this address supply, only the AND circuit DE₁ is switched to the H-level (approximately 2.2 volts), and the bit line 18₁ is precharged via a resistor R₁ provided in the multiplex circuit 17. As a result, the potential of the bit line 18₁ is kept at the H-level as shown in FIG.8(A). At this time, the output terminals of the inverter circuits 14a and 14d are at the H-level, and the output terminals of the inverter circuits 14b and 14c are at the L-level. Therefore, the discharge lines 31₁ and 31₄ in the discharge circuit 30 are switched to the L-level, and then the bit lines 18₂ to 18₄ are discharged via the diodes D₁₃, D₁₄, D₄₂ and D₄₄, respectively. As a result, the potentials of the bit lines 18₂ to 18₄ become equal to be approximately 1.2 volts due to the voltage drop across the resistor R₁. The L-level of the bit lines is of a potential of 1.2 volts (discharged level). Since the discharge lines 31₂ and 31₃ are at the H-level, the bit line 18₁ coupled with the selected cell S₁₁ is maintained at the H-level (equal to approximately 2.2 volts). Signal waveforms on the discharge lines 31₃ and 31₄ are shown in FIGS.8B and 8C, respectively. FIG.8D shows a waveform of the address bit y₀. Subsequently, when the value of the address bit y₀ is changed to '1' at time t₁ and thereby the cell S₁₃ is selected, the outputs of the AND circuit DE₁ and DE₃ are changed to the L and H-levels, respectively, and thus the bit line 18₃ is precharged. Simultaneously, the discharge lines 31₁ and 31₂ are switched to the L and H-levels, respectively. Therefore the bit lines 18₁, 18₂ and 18₄ are discharged and become equal to be discharge potential of approximately 1.2 volts. Similarly, when the cell S₁₂ is selected, all the bit lines except for the bit line 18₂ are forced to be discharged. And when the cell S₁₄ is selected, all the bit lines except for the bit line 18₄ are forced to be discharged. The potentials of the bit lines 18₁ to 18₄ which have been discharged by the function of the discharge lines 31₁ to 31₄ are equal to be approximately 1.2 volts which is the potential value of the bit line 18₁ which has been switched to the L-level when the cell in which information has been written as in the cell S₂₁ is selected. The reason for the above is as follows. As shown in FIG.9, a time necessary for the potential of the bit lines to rise from a value of (1.2 - Δ) volts to 2.2 volts is Δt longer than a time necessary for the potential of the bit lines to rise from a value of 1.2 volts to 2.2 volts. The precharged potential of the bit lines at approximately 1.2 volts enables the rise of the signal waveform on each bit line to be prevented from being delayed. As described above, since all the bit lines except for the bit line to which the cell selected by the discharge circuit 30 is connected are forced to be discharged, the number of the cells which have written information and conduct temporarily due to the address skew is one at most. Therefore the delay of the signal is very small and speeding up of information read from the ROM becomes possible. The area 40 which is added to the pattern shown in FIG.3A does not lead to a considerable increase in the pattern area on the chip. The number of the discharge line depends on the number of bits of the Y address. For example, in the embodiment of FIG.6, the four discharge lines 31₁ and 31₄ are provided as the Y address consists of two bits y₀ and y₁. In general, in a case where the Y address consists of m bits, (2 x m) discharge lines are necessary to configure the discharge circuit. Likewise, (2 x m) inverters are necessary to designate the levels of the discharge line. FIG.10 is a circuit diagram of another embodiment of the present invention. The reference numerals which are the same as those in FIG.6 denote the constituents which are the same as those therein. A discharge circuit 40 comprises inverters DC₁ and DC₂, discharge lines 31₁ and 31₂, and diodes D₁₃, D₁₄, D₂₁ and D₂₂. The input terminal of the discharge circuit DC₁ is connected to the output terminal of the inverter 14a, and the input terminal of the discharge circuit DC₂ is connected to the output terminal of the inverter 14b. The output terminals of the inverters DC₁ and DC₂ are connected to the discharge lines 31₁ and 31₂, respectively. The diodes D₁₃ and D₁₄ connect the bit lines 18₃ and 18₄ to the discharge line 31₁, respectively. The diodes D₂₁ and D₂₂ connect the bit lines 18₁ and 18₂ to the discharge line 31₂. Positions at which diodes are to be connected between the discharge lines and bit lines are selected as in the case of the embodiment shown in FIG.6. In the embodiment of FIG.10, when the address bit y₀ is set to '0' and thereby a cell connected to the bit line 18₁ or 18₂ is selected, the bit lines 18₃ and 18₄ are discharged by the discharge line 31₁. When the address bit y₀ is set to '1' and thereby a cell connected to the bit line 18₃ or 18₄ is selected, the bit lines 18₁ and 18₂ are discharged by the discharge line 31₂. In this case, cells which have written information and conduct temporarily due to the occurrence of the address skew is equal to n/2 at most where n is the number of cells connected to one word line. Therefore, cells having the probability of conducting temporarily due to the address skew are decreased compared to the conventional ROM shown in FIG.1. As a result, the delay of the signal is also decreased, so that the speed of reading out information from the designated cell is improved compared to the conventional ROM. Further the circuit configuration of the ROM shown in FIG.10 is simplified and is thereby capable of decreasing an area on the semiconductor chip occupied by the discharge circuit, compared to the first embodiment shown in FIG.6. However, the ROM of FIG.6 is faster than the ROM of FIG.10. In the above embodiment of FIG.10, the discharge circuit 40 is activated by the address bit y₀ and its reverse bit. It is possible to activate the discharge circuit 40 by using a plurality of bits selected from among the bits y₀ to y m of the Y address as well as their reverse bits. The present invention is not limited to the above embodiments, but various variations and modifications may be made without departing from the scope of the present invention.

Claims: A read only memory circuit comprising: a memory cell array (12) having a plurality of bit lines (18¹ - 18 n ) and a plurality of word lines (13₁ - 13 n ) and cells (S₁₁ - S nn ) connected between the bit lines and word lines; bit line selecting means (16) for selecting one of the bit lines designated by a Y address and precharging the selected bit line at a precharged potential; word line selecting means (11) for selecting one of the word lines by an X address; and signal output means (17, 19) for reading a datum stored in one cell connected between said one bit line and said one word line designated by the X and Y addresses, characterized in that: the read only memory circuit further comprises discharge means (30, 40) for discharging m bit lines except for said one bit line designated by the Y address; and m is equal to or larger than 1 and smaller than n where n is the number of said plurality of bit lines. A read only memory circuit as claimed in claim 1, characterized in that said discharge means comprises: a plurality of discharge lines (31₁ - 31₄); level setting means (DC1 - DC4) for setting the level of each of the discharge lines to either a low level or a high level in accordance with the Y address; and diodes (D₁₃, D₁₄, D₂₁, D₂₂, D₃₁, D₃₃, D₄₂, D₄₄) connected between the discharge lines and the bit lines so that said m bit lines are discharged via the diodes in such a manner that currents from said m bit lines are allowed to pass through the diodes and flow to discharged lines set at the low level by said level setting means. A read only memory circuit as claimed in claim 2, characterized in that the diodes respectively have anodes connected to the bit lines, and cathodes connected to the discharge lines. A read only memory circuit as claimed in claim 2 or claim 3, characterized in that: the Y address comprises a plurality of bits; said level setting means comprises inverters (DC₁ - DC₄) respectively connected to the discharge lines; and each of said inverters receives either one of the bits or an inverted version of one of the bit lines. A read only memory circuit as claimed in claim 4, characterized in that when one of the bits of the Y address applied to one of the inverters is maintained at the high level and thereby one of the discharge lines which is connected to said one of the inverters is maintained at the low level, bit lines connected to said one of the discharge line via the diodes are connected to said one of the discharge lines and hence discharged. A read only memory circuit as claimed in any of claims 2 to 5, characterized in that when the Y address consists of s bits, said read only memory circuit comprises (2 x s) discharge lines where s is an integer. A read only memory circuit as claimed in either claim 4 or 5, characterized in that each of the inverters (DC₁ - DC₄) comprises two Schottky transistors (Tr₁, Tr₂) connected in series. A read only memory circuit as claimed in any of claims 1 to 7, characterized in that said read only memory circuit is a programmable read only memory circuit. A read only memory circuit as claimed in any of claims 1 to 8, characterized in that said discharge means discharges all the bit lines except for said one of the bit lines designated by the Y address. A read only memory circuit as claimed in any of claims 1 to 8, characterized in that said discharge means discharges a part of all the bit lines except for said one of the bit lines designated by the Y address.

Inventors: TSUCHIMOTO, YUJI
Applicants: FUJITSU LIMITED
Application year: 1988
Main classification: G11C7
IPC codes: G11C17, G11C7