Field effect transistor

Abstract: A new gallium arsenide gate heterojunction FET is dis­ closed. The gate (12) is a multi-layer structure (1, 2, 3) including an intermediate carrier depletable layer (2). Upon applying a gate voltage, the intermediate layer (2) becomes depleted thereby effectively increasing the gate resistance and reducing gate leakage current.

Description: BACKGROUND This invention relates in general to field effect transistor (FET) devices, and, in particular, to an improved saturable charge field effect transistor in which source and drain electrodes are separated by a channel region having an insulating portion on which the gate is deposited. A semiconductor-insulator-semiconductor field-effect transistor with a gallium arsenide gate is described in "A GaAs Gate Heterojunction FET", P.M. Solomon, et al., IEEE Electron Device Letters, Volume EPL-5, No. 9, September 1984. That transistor has a heavily doped n-type gallium arsenide gate with an undoped aluminum gallium arsenide gate insulator disposed on an undoped gallium arsenide layer. Sources and drains are fabricated from n-doped ion-implants. Compared to a silicon based MOSFET, the gallium arsenide gate FET has a lower threshold voltage, a higher speed of operation due to an extraordinary electron mobility at low temperatures, and a low power supply voltage requirement. However, the relatively low gate voltage has certain drawbacks. In particular, the low gate voltage results in an appreciable gate leakage current. The leakage-current is particularly significant in low power dissipation circuits such as complimentary and memory cells. In such cells, it is desirable to have very thin insulating layers of aluminum gallium arsenide in order to yield a higher transconductance. It is also desirable to operate devices with larger gate voltages. In both cases, the thinner layer of aluminum gallium arsenide and the increased operating voltage on the gate increases the undesired leakage current. A High-Electron Mobility Transistor (HEMT) with recessed gate structure consisting of several modulation doped Al 0.3 Ga 0.7 As layers is reported on in "Novel Multilayer Modulation Doped (Al, Ga)As/GaAs Structures for Self-Aligned Gate FETs", N.C. Cirillo et al., Electronics Letter, Vol. 20, No. 21, October 1984, pp. 854 - 855. This HEMT, also referred to as Modulation Doped FET (MODFET), is designed such that its multilayer gate structure is capable of withstanding high temperature furnace anneals being necessary for the activation of dopants in the implant regions embedding the gate layers. So, it is desirable to have an FET as described above with a gate structure that operates at higher voltages and has less leakage current. It is particularly desirable to have such a device without any compromise in the speed or performance of the GaAs gate FET. SUMMARY OF THE INVENTION The foregoing desired objects are achieved by the FET having a multi-layer gate structure as claimed. In particular, an FET with a gallium arsenide gate is constructed with three layers of gallium arsenide. The bottom layer or layer closest to the aluminum gallium arsenide insulating layer is a layer of highly doped gallium arsenide. The next or intermediate layer is a layer of relatively lightly doped gallium arsenide. The upper or top most, ohmic contact layer is a layer of highly doped gallium arsenide. In all layers the doping is the same type i.e. it is all n-doped or all p-doped. In the preferred embodiment the doping is all n-doped with the intermediate layer less doped than either the bottom or the top layer. The alternate layers of gallium arsenide are applies to the gate by suitable means, such as molecular beam epitaxial deposition. The charge carrier type of doping of the layers is the same as the doping of the channel of the FET. The device operates on the principle that the charge density in the FET channel and the gate current depend upon the electric field in the insulating layer of aluminum gallium arsenide. By limiting the electric field at a given voltage, for instance, by choosing a thick enough insulator, both the gate current and the charge density in the channel will be limited. The invention achieves this end by interposing a depletion layer i.e. the lightly doped, intermediate gallium arsenide layer between the two heavily doped gallium arsenide layers in the gate. As such, the intermediate layer, under the influence of a large gate voltage, becomes depleted of charge carriers. When depletion occurs, the intermediate layer becomes an insulator that is in series with the aluminum gallium arsenide insulating layer. So, the effective insulating layer on the gate is dynamically increased as the result of increasing gate voltage. For low gate voltages, the bottom layer on the gate is only partially depleted and the FET is conductive and thus has a high transconductance. However, for large gate voltages, the bottom layer of the gate becomes completely depleted of charge carriers. The second layer or intermediate layer also becomes depleted and so the concentration of electrons in the channel underneath the gallium arsenide layer saturates at the value of sheet donor concentration of electrons in the bottom most gallium arsenide layer of the gate. A further increase in gate voltage will cause only a small or negligable increase in drain or gate current. In effect, the thickness of the gate insulator is now that of the depleted intermediate region in series with the aluminum gallium arsenide layer. DESCRIPTION OF THE DRAWING The foregoing summary of the invention can be better understood by reference to the following detailed description when read in conjunction with the accompanying drawing wherein: Figure 1 is a cross-sectional schematic view of the invention: Figure 2 is an energy band diagram of the cross-section of the invention for low gate voltages slightly greater than zero; Figure 3 is an energy band diagram of the invention for relatively large gate voltages. DETAILED DESCRIPTION In Figure 1 there is generally shown a saturable charge FET 10. The structure of the FET 10 has a (100)-oriented semi-insulating gallium arsenide substrate 6. On top of layer 6 is a layer 5 of undoped gallium arsenide. Layer 5 is approximately one µm thick and is grown by molecular beam epitaxial methods. On top of layer 5 is layer 4 comprising a layer of undoped Al x Ga 1-x As also grown by molecular beam epitaxy. Layer 4 may be from 10nm to 100 nm thick and the preferred thickness is approximately 20nm. The range of x in the Al x Ga 1-x As layer 4 is between 0.3 and 0.8, preferably 0.5. Source and drain regions 18, 19 may be formed by ion implantation or diffusing of n-type doping. It is preferred to implant silicon at 60 KeV and 5 x 10¹³cm⁻³. Ohmic contracts 16, 17 are fabricated in a customary manner using a gold-germanium nickel alloy or other suitable contact components. Ohmic contacts 16 and 17, together with regions 18 and 19 form source and drain electrodes 11 and 13, respectively. The gate 12 of the FET 10 includes a bottom layer 1 adjacent the insulating layer 4. Layer 1 comprises a layer of gallium arsenide that is about 10nm (100 Angstroms) thick and n-doped to approximately 10¹⁸cm⁻³. The doping times the thickness of layer 1 is equal to the maximum charge density desired in the FET channel. The doping in layer 1 is large enough to not appreciably degrade the transconductance of the FET. The preferred range of doping is 5x10¹¹cm⁻² to 2x10¹²cm⁻² for layer 1. Layer 2 is also composed of GaAs and is doped to a much lesser degree than is layer 1; about 10¹⁶cm⁻³ is typical. Layer 2 is limited in thickness by the planarity constraints on the FET 10. Otherwise, layer 2 can be as thick as practically possible and 30 nm to 1 µm is typical. Layer 3 is also composed of GaAs which is doped as heavily as possible and is thick enough to ensure a good contact with ohmic contact 7. Doping in the order 6 x 10¹⁸cm⁻³ is typical and a thickness of 50nm (500 Angstroms) would be desirable. An additional layer (not shown) of indium arsenide may be deposited on layer 3 to assist in the further fabrication of ohmic contact with layer 3. A 150nm layer of a refractory metal such as molybdenum or tungstem silicide is deposited to form the contact layer 7. That layer is patterned using reactive ion etching and plasma to expose the upper surface of the aluminum gallium arsenide layer 4. After formation of the source and drain regions noted above, the device 10 is annealed and ohmic contacts 16, 17 are formed. The device 10 has a gate length of approximately 1 µm or as small as photolithography permits. In operation, the threshold voltage of the device 10 is near zero. A heterojunction forms in the device between the aluminum gallium arsenide layer 4 and the gallium arsenide layer 5. There is a two dimensional electron gas at that interface. As such, carriers appearing at the source are rapidly transmitted via the two dimensional gas to the drain. This typical operation of the device 10 is diagramically presented in Figure 2. For low gate voltages, the layer 1 is only partially depleted and layer 2 has no influence on the characteristics of device 10 since it is essentially a conducting layer. When the gate voltage is increased, the effects of the increased voltage upon the gate layers 1, 2, 3 produces a pronounced change in the operation of the device 10. In this regard, reference is made to Figure 3. There it is shown that for a large gate voltage, layer 1 will become depleted. For a sufficiently lightly doped layer 2, it too will become depleted. As such, the electron concentration in the channel underneath the gate 12 and between the source region 18 and the drain region 19 saturates at the value of sheet donor concentration in layer 1. By Gauss' law, the electric field in aluminum arsenide layer 4 is fixed at a value determined by the donor sheet concentration in layer 1, and the gate tunneling current is fixed. A further increase in gate voltage will cause only a small increase in drain and gate current. This is so because the effective thickness of the insulating layers of gate 12 is now that of the depleted region 2 in series with aluminum gallium arsenide layer 4. The sum of these two regions may be between 30 to 200 nm (300 to 2000 Angstroms) thick. Such thickness will be sufficient for adaquately reducing gate leakage current at larger gate voltages. In the foregoing description, the FET 10, is an n-channel device. However, those skilled in the art will appreciate that different types of doping concentrations as well as different thickness layers and other materials may also be used, e.g., p-channel devices could be fabricated with suitable doping. Also, the layers 1, 2, 3 are deposited on the gate by well known methods of molecular epitaxial deposition but other methods are usable.

Claims: A field effect transistor of the type having source (11) and drain (13) electrodes separated by an uninterrupted channel region (5) in contact with a parallel insulating portion (4), a semiconductor gate (12), separated from said channel by the insulating portion (4), said gate having a first high conductivity semiconductor layer (1) immediately adjacent said insulating portion (4) of said channel, and a second depletable low conductivity semiconductor layer (2) separating said first layer (1) from a third (3) high conductivity semiconductor external contact layer, the three gate layers (1. 2, 3) having the same type of doping, said insulating portion (4) forming a heterojunction with said channel region (5) containing a two dimensional electron gas at said heterojunction. The field effect transistor of Claim 1, wherein the three gate layers (1, 2, 3) comprise the same semiconductor material. The field effect transistor of Claim 3, wherein the material is GaAs. The field effect transistor of Claim 1, wherein the second layer (2) is of the order of 30nm to 1 µm thick. The field effect transistor of Claim 1, wherein the product of the doping and the thickness of the first layer (1) is equal to a maximum desired charge density in the channel. The field effect transistor of Claim 1, wherein the preferred range of doping of the first layer (1) is 5x10¹¹cm⁻² to 2x10¹²cm⁻².

Inventors: SOLOMON PAUL MICHAEL, SOLOMON, PAUL MICHAEL
Applicants: IBM, INTERNATIONAL BUSINESS MACHINES CORPORATION
Application year: 1988
Main classification: H01L29
IPC codes: H01L29, H01L21