Silicon-containing polyimide precursor, cured product therefrom, and preparation thereof

Abstract: A silicon-containing polyimide precursor has a logarithmic viscosity number of 0.05 to 5 dl/g when measured at a concentration of 0.5 g/dl at 30 ± 0.01°C in a solvent and comprises a compound of the formula: [R⁴ 3-k Si-R³-L-(R²-L) n -R³-SiR⁴ 3-m O (k+m)/2 ] p [SiO₂] q (I) in which R² is an aliphatic group containing from 2 to 12 carbon atoms, an alicyclic group containing from 4 to 30 carbon atoms, an aromatic aliphatic group containing from 6 to 30 carbon atoms, a carbocyclic aromatic group containing from 6 to 30 carbon atoms, a polysiloxane group of the formula: (in which each group R⁵ is a C₁-C₄ alkylene group, a C₇-C₁₀ alkylene-phenylene group, a C₇-C₁₀ alkylenoxy-phenylene group or a phenylene group, each group R⁶ is a C₁-C₆ alkyl group, a phenyl group or an alkylphenyl group containing up to 12 carbon atoms, and ℓ has a value of from 1 to 100), or a group of the formula: (in which R⁷ is an aliphatic group containing up to 8 carbon atoms, an aromatic aliphatic group or a hydrogen atom; R³ is a C₁-C₄ alkylene, C7-C₁₀ alkylene­ phenylene. C₇-C₁₀ alkylenoxy or phenylene group); each group R⁴ is a C₁-C₄ alkyl group, a phenyl group or an alkyl-substituted phenyl containing up to 12 carbon atoms; k and m are each 0, 1, 2 or 3 and the sum of k and m is 1 or more; n is an integer of 1 or more; each of p and q is a positive integer; and L is a group: (in which R¹ is a tetravalent carbocyclic aromatic group, and the two carbonyl groups of an imide group, or one amide group and one carboxyl group are respectively attached ortho to each other ). The precursor may be prepared by reaction of appropriate aromatic dicarboxylic acid anhydride, diamine, aminosilicon compounds and silane compounds. The precursor may be cured by heating to give a cured/crosslinked material.

Description: The present invention relates to a silicon-containing soluble polyimide precursor, the cured product obtained by heating the precursor to crosslink/cure it, and to the preparation of the precursor and the cured product. Among organic polymers, polyimide resins have a high heat resistance and a low coefficient of thermal expansion but these characteristics are inferior to those of inorganic compounds. In order to improve the surface hardness, wear resistance and the like of polyimide resins, the resin may be filled with inorganic materials. In this case, however, breakage is liable to occur between the filler and the resin. Silica is an inorganic material having good practical characteristics, e.g. a low coefficient of thermal expansion and high hardness in addition to good heat resistance, but it is brittle and difficult to process or mould. For this reason, the practical applications of silica are limited. In order to improve processability and mouldability, a variety of compounds have been synthesized in which groups which are bonded to each silicon atom are partially replaced with alkyl groups. This technique has been successful to some extent, for example in the case of the polydimethylsiloxanes and the like, but such compounds have disadvantages such as a noticeable deterioration of heat resistance and a perceptible increase in coefficient of thermal expansion and a marked degradation of hardness. In order to overcome these disadvantages many proposals have been made to chemically combine polyimides with silicon compounds (see, e.g. Japanese Laid-Open Patent Publications Nos. 143328/1982, 7473/1983 and 13631/1983). These proposals are based on the partial replacement of a diamine component, which is a starting material for a polyimide, by a polydisiloxane having terminal diamine groups at both ends. In Japanese Patent Publication No. 32162/1983 there is suggested a crosslinked polyimide having a siloxane group which can be prepared by mixing a polyamide acid, which is terminated with reactive silicon compounds at both ends, with a polysiloxane having hydroxyl groups at both ends, and then heating the mixture. Furthermore, as a process of forming silica films, there has been suggested a technique of calcining a reactive silane such as an alkoxy silane or an acetoxy silane (see, e.g., Japanese Patent Publications Nos. 16488/1977 and 20825/1977, Japanese Laid-Open Patent Publications Nos. 34258/1980 and 250032/1986, and U.S. Patent No. 4408009). Products disclosed in the above-mentioned Japanese Publications Nos. 143328/1982, 7473/1983 and 13631/1983 still have disadvantages such as a noticeable reduction in heat resistance, a perceptible increase in the coefficient of thermal expansion and moulded degradation of hardness. The compound disclosed in Japanese Patent Publication No. 32162/1983 has good affinity for inorganic compounds but cannot provide materials having low coefficients of thermal expansion. With regard to the technique of calcining a reactive silane such as an alkoxy silane or an acetoxy silane, films synthesized by this technique are very brittle. and the thickness of the films is, at most, several thousand angstroms. According to the invention there is provided a silicon-containing soluble polyimide precursor which has a logarithmic viscosity number of 0.05 to 5 dl/g when measured at a concentration of 0.5 g/dl at 30 ± 0.01°C in N-methyl-2-pyrrolidone and which comprises a compound of the formula: [R⁴ 3-k Si-R³-L-(R²-L) n -R³-SiR⁴ 3-m O (k+m)/2 ] p [SiO₂] q (I) in which R² is an aliphatic group containing from 2 to 12 carbon atoms, an alicyclic group containing from 4 to 30 carbon atoms, an aromatic aliphatic group containing from 6 to 30 carbon atoms, a carbocyclic aromatic group containing from 6 to 30 carbon atoms, a polysiloxane group of the formula: (in which each group R⁵ is a C₁-C₄ alkylene group, a C₇-C₁₀ alkylene-phenylene group, a C₇-C₁₀ alkylenoxy-phenylene group or a phenylene group, each group R⁶ is a C₁-C₆ alkyl group, a phenyl group or an alkylphenyl group containing up to 12 carbon atoms, and ℓ has a value of from 1 to 100), or a group of the formula: (in which R⁷ is an aliphatic group containing up to 8 carbon atoms, an aromatic aliphatic group or a hydrogen atom); R³ is a C₁-C₄ alkylene, C₇-C₁₀ alkylenephenylene, C₇-C₁₀ alkylenoxy-phenylene or phenylene group); each group R⁴ is a C₁-C₄ alkyl group, a phenyl group or an alkyl-substituted phenyl containing up to 12 carbon atoms; k and m are each 0, 1, 2 or 3 and the sum of k and m is 1 or more; n is an integer of 1 or more; each of p and q is a positive integer; and L is a group: (in which R¹ is a tetravalent carbocyclic aromatic group, and the two carbonyl groups of an imide group, or one amide group and one carboxyl group are respectively attached ortho to each other). The invention also provides a cured silicon-containing polyimide obtained by heating a solution containing a compound of formula (I) at a temperature of 50 to 500°C. The cured material contains compound of the formula [R⁴ 3-k Si-R³-L¹-(R²-L¹) n -R³-SiR⁴ 3-m O (k+m)/2 ] v [SiO₂] w (I') in which R², R³, R⁴ k, and ℓ, m and n have the meanings defined above; v and w are each positive integers and L' is a group (in which R¹ has the meaning defined above). The invention also provides a method of preparing a precursor as defined above by reacting together, a moles of a dianhydride of the formula: (in which R¹ is as defined above), b moles of a diamine H₂N-R²-NH₂ (in which R² is as defined above), c moles of each of amino-silicon compounds of the formulae H₂H-R³-SiR⁴ (3-k) X¹ k and H₂N-R³-SiR⁴ (3-m) X¹ m (in which R³, R⁴, k and m are as defined above and X¹ is an alkoxy, acetoxy or hydroxy group or a halogen atom), and d moles of a silicon compound of the formula: SiX² ₄(in which X² is an alkoxy, acetoxy or hydroxy group or a halogen atom); the ratio (2b + c)/a having a value of from 1.8 to 2.2 and the ratio d/a having a value of from 0.03 to 33; the reaction being carried out in the presence of 70% by weight or more of a solvent at a temperature of 0 to 200°C for from 0.2 to 20 hours. The group R² is preferably a group (wherein r is 0 or 1); R³ is preferably independently a phenylene group, and k and m are each preferably 3. The precursor of the invention may be prepared by mixing together five compounds, namely: a moles of a dianhydride of the formula: (in which R¹ has the meaning defined above); b moles of a diamine of the formula: H₂N - R² - NH₂ (VII) (in which R² has the meaning defined above); c moles of amino-silicon compounds of the formulae: H₂N-R³-SiR⁴ 3-k X¹ k (VIII) and H₂N-R³-SiR⁴ 3-m X¹ m (VIII') (in which R³, R⁴, k and m have the meanings defined above and X¹ is a halogen atom or a hydroxyl, alkoxy or acetoxy group); and d moles of a silicon compound of the formula: SiX² ₄ (IX) (in which X² has the range of meanings defined for X¹ above); the value of the ratio (2b + c)/a being from 1.8 to 2.2 and the value of the ratio d/a being from 0.03 to 33; and performing reaction at a temperature of 0 to 200°C for 0.2 to 20 hours. Alternatively the four compounds of formulae (VI) to (VIII') may be mixed; reacted at a temperature of 0 to 200°C for a period of 0.2 to 10 hours; and the remaining compound of formula (IX) then added thereto; with the addition of an acid and/or a small amount of water if necessary; followed by reaction at 50 to 200°C for 0.2 to 30 hours. Examples of the tetracarboxylic dianhydrides and diesters of formula (VI) include pyromellitic dianhydride, 3,3',4,4'-biphenyltetracarboxylic dianhydride, 2,2'3,3'-biphenyltetracarboxylic dianhydride, 2,3,3',4'-biphenyltetracarboxylic dianhyride, 3,3',4,4'-benzophenonetetracarboxylic dianhydride, 2,3,3',4'-benzophenonetetracarboxylic dianhydride, 2,2'-3,3'-benzophenone-tetracarboxylic dianhydride, bis(3,4-dicarboxyphenyl) ether dianhydride, bis(3,4-dicarboxyphenyl)sulfonic dianhydride, 1,2,5,6-naphthalenetetracarboxylic dianhydride, 2,3,6,7-napthalenetetracarboxylic dianhydride, and diesters of these compounds with alcohols. Typical examples of diamines of formula (VII) include aromatic diamines such as 4,4'-diamino diphenyl ether, 4,4'-diaminodiphenylmethane, 4,4'-diaminodiphenyl sulfone, 4,4'-diaminodiphenyl sulfide, 4,4'-diamino diphenyl thioether, 4,4'-di(meta-aminophenoxy)-diphenyl sulfone, 4,4,-di(para-aminophenoxy)diphenyl sulfone, ortho-phenylenediamine, meta-phenylenediamine, para-phenylenediamine, benzidine, 2-2'-diaminodiphenyl-2,2'-propane, 1,5-diaminonaphthalene and 1,8-diaminonaphthalene; aliphatic diamines such as trimethylenediamine, tetramethylenediamine, hexamethylenediamine, 4,4-dimethylheptamethylenediamine, 2,11-dodecanediamine; silicon diamines such as bis(p-aminophenoxy)dimethylsilane and 1,4-bis(3-aminopropyldimethylsilyl)benzene; an alicyclic diamine such as 1,4-diaminocyclohexane; aminoalkyl-substituted aromatic compounds such as O-xylylenediamine and m-xylylenediamine; and guanamines such as acetoguanamine and benzoguanamine. Examples of diaminopolysiloxanes having amino groups at both ends of formula (V) are as follows: Examples of the aminosilicon compounds of formulae (VIII) and (VIII') are as follows: NH₂-(CH₂)₃-Si(OCH₃)₃, NH₂-(CH₂)₃-Si(OC₂H₅)₃, NH₂-(CH₂)₃-Si(CH₃)(OCH₃)₂, NH₂-(CH₂)₃-Si(CH₃)(OC₂H₅)₂, NH₂-(CH₂)₃-Si(C₂H₅)(OC₃H₇)₂, NH₂-(CH₂)₄-Si(OCH₃)₃, NH₂-(CH₂)₄-Si(OC₂H₅)₃, NH₂-(CH₂)₄-Si(CH₃)(OC₂H₅)₂, Examples of the silicon compounds of formula (IX) include Si(OCH₃)₄, Si(OC₂H₅)₄, Si(OC₃H₇)₄, Si(OC₄H₉)₄, Si(OC₆H₁₃)₄, Si(OCOCH₃)₄, Si(OCH₃)₄, Si(OCH₃)₂(OC₂H₅)2, Si(OC₃H₅)₂(OH)₂ and SiC1₄. Examples of the solvent (hereinafter occasionally referred to as a reaction solvent) used in the reaction of the above-mentioned starting materials include N-methylpyrrolidone, dimethylacetamide, dimethylformamide, dimethyl sulfoxide, tetramethylurea, pyridine, dimethyl sulfone, hexamethylsulfonamide, methylformamide, N-acetyl-2-pyrrolidone, toluene, xylene, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monobutyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol dimethyl ether, diethylene glycol diethyl ether and mixtures of two or more thereof. In addition, mixed solvents each containing 30% by weight or more of the above-mentioned solvent and another solvent can be also used in the present invention. As a result of the raction between the compounds of formulae (VI), (VII), (VIII) and (VIII'), a polyamic acid (or polyimide) can be obtained in which X¹ of a reactive group is bonded to its terminal. These four starting materials may be added in optional order, but a higher-molecular weight polymer can be obtained by first reacting the compounds of formulae (VI) and (VII), and then adding the compounds of formulae (VIII) and (VIII') thereto. The reaction can be performed at a temperature of 0 to 200°C for a period of 0.2 to 20 hours. If the reaction temperature is higher, the proportion of imido groups in the polymer is greater than that of amide acid, and the groups X¹ are partially hydrolyzed, so that the condensation of the siloxane can occur to increase the molecular weight of the polymer. Alternatively, if high imido group formation is desired, the amide groups of the polyamide formed by a known manner (e.g. by the addition of a small amount of acetic anhydride and/or pyridine, isoquinoline or a tertiarly amine such as imidazole) can be wholly or partially converted into imide groups at ordinary temperature or whereabouts. In this first step of the reaction, the compound of formula (IX) may be previously added thereto, provided no problems arise. Afterward, d mol of silicon compound of formula (IX) are added to the reaction mixture and if necessary, an acid and/or a small amount of water is added thereto, and the mixture reacted at a temperature of 50 to 200°C for 0.2 to 30 hours. The addition of the acid and water is a known means for accelerating condensation of the siloxane. Examples of suitable acids are mineral acids, organic acids, acidic ion exchange resins and solid acidic materials in which inorganic acids are supported in carriers. As mineral acids, hydrochloric acid sulfuric acid and nitric acid are preferably. As organic acids, there can be used formic acid, acetic acid, propionic acid, oxalic acid, citric acid, malonic acid, salicylic acid, chloroacetic acid, fluoroacetic acid, benzenesulfonic acid and toluenesulfonic acid. Examples of acidic ion exchange resins are sulfonic acid type strongly acidic cationic exchange resins and super acidic cationic resins, and preferable examples of the ion exchange resins include those available under the trade names Diaion-SKIB-H, Diaion-PK-229-H, Amberlite-IR-120B, Amberlite-118, Amberlite-112, Amberlite-122, Amberlite-124, Amberlite-200C and Naphion-H. Examples of solid acid materials include silica, alumina-silica, zirconia and active carbon supporting sulfuric acid or phosphoric acid, The amount of the acid to be added is preferably 1/10 (mc + 4 d ) mole or less, but the acid can be present in an amount above this level. As for the amount of water to be added, it may be [(mc + 4 d ) - (2 d + c )] mole or less, but when it is in excess of this level, the reaction rate can be accelerated. The requirement that a, b and c are such that the ratio (2b + c)/a is from 1.8 to 2.2 requires a substantially equivalent relation for the formation of imide from the acid anhydride of formula (VI) and the amines of formulae (VII), (VIII) and (VIII'). Thus, if the ratio is less than 1.8 a polyimide predominates and if it is above 2.2 a silicon compound predominates. The reaction solvent is preferably used in an amount of 70% by weight or more based on the total solvent and the reactants. At lower levels, the solution may gel during the reaction. According to the procedure described above, the silicon-containing soluble polyimide precursor (hereinafter simply referred to as "precursor") of the invention can be obtained of which the logarithmic viscosity number is within the range of 0.05 to 5 dl/g, measured as defined above, and which has a desirable molecular weight. When the logarithmic viscosity number is less than 0.05, coating properties are insufficient, and it is difficult to synthesize a precursor in which the value is greater than 5. The fundamental structure of the silicon-containing soluble polyimide precursor in accordance with the invention can be represented by formula (I), but at the end portions of formula (I), groups -Si-X¹, -Si-X² or -Si-OH which has been partially unreacted are present. Thus, the precursor of the present invention is then calcined in order to advance the condensation reaction of the siloxane, with the result that curing and insolubilization occur due to intermolecular crosslinking. In this way, a solid structure can be prepared from the precursor of the invention. With regard to the parameters p and q in formula (I), as the ratio of q / p becomes great, the imide characteristics become weak and those of the silicon compound come to predominate. As the ratio of q / p and the value m increase and as the value n decreases, characteristics of the inorganic material (silica) become strong. In consequence, the coefficient of thermal expansion lowers and the hardness increases noticeably. For this reason, the ratio of q / p , i.e. w / v , is preferably from 0.03 to 33. When R² is (wherein r is 0 or 1), the precursor has particularly good solubility in the solvent. In many cases, the precursor of the invention is used as a varnish in the form of a solution in a solvent, the solution obtained by the method of the invention may be concentrated or diluted with a solvent to achieve the desired concentration. The diluent solvent may be the same as the reaction solvent. From the solution of the precursor of the invention, moulded articles may be formed in any known manner. For example, the precursor solution may be coated onto a glass plate, a copper plate or an aluminum plate, and then heated to remove the solvent with simultaneous crosslinking of siloxane bonds to form a hard tough coating film. The formation of laminated composite materials can be also achieved by repeating the above operation or by applying a varnish as an adhesive between heterogeneous sheets, and calcining them. Furthermore, the laminated materials having reinforced films can also be formed by impregnating a filler (e.g. glass fibres or the like) with a varnish, and then calcining it to cure the varnish. Conditions for the calcination depend upon the nature of the solvent, the thickness of the coating film and the like, but the calcination temperature will usually be from 50 to 500°C, preferably from 200 to 400°C, and the calcination time will generally be from 0.5 to 2 hours. In the cured material having high molecular weight which is prepared by heating the precursor to calcine it, there occur dehydrating condensation between unreacted -CONH and -COOH, other dehydrating condensation (≡Si-O-Si≡) between ≡SiOH and HOSi≡, and condensation (≡Si-O-Si≡) between ≡SiOH and X²Si≡). Therefore, L¹ in the formula (I') of the cured material is represented only by the formula The precursor of the present invention has a desirable logarithmic viscosity number, and therefore the viscosity of its solution is suitable for good coating. Furthermore, when the coating film of the precursor is calcined, siloxane condensation reactions occur to bring about intermolecular bond, so that the coating film becomes hard and tough. In addition, the precursor coating film can exhibit a strong adhesive function to glasses, ceramics, silicon wafers, various metallic oxides and the like. Since the cured silicon-containing polyimide of the present invention results from the strong molecular bond by the siloxane condensation reaction, and therefore the cured material has high hardness and toughness, enhanced heat resistance and low coefficient of thermal expansion which is close to that of inorganic compounds. Since the cured material of the present invention has the enhanced heat resistance and the low coefficient of thermal expansion which is close to that of inorganic compounds as just described, it is desirable as a laminating material which is laminated onto inorganic sheets. Moreover, in the cured material of the present invention, brittleness which is one of drawbacks of the inorganic compounds is eliminated, and hence the cured material can be formed in the state of thicker coating films as surface coating materials. In addition to this advantage, the cured material of the present case is harder than organic coating films of polyimides and the like, and thus it has practical value as a material for the boundary between organic and inoganic materials. The cured material of the present invention can be manufactured, in an easy manner of cast molding or coating and heating, from the silicon-containing soluble polyimide which can be synthesized from the easily available raw materials under moderate conditions. Additionally, the excellent structure of the cured material can be obtained by impregnating an inorganic fiber such as a glass fiber with the precursor solution of the present case, followed by calcining. The cured material obtained from the precursor of the present invention is excellent in heat resistance and mechanical, electrical and adhesive properties. Therefore, the precursor of the present case can be employed in various coating agents for glass, ceramics, silicon wafers and metallic oxides, liquid crystal orientation films, adhesives, inorganic fibers such as glass fibers and the like. The cured material which is obtained by subjecting the above precursor to the steps of impregnation and calcination is useful as a structure and the like in these articles. EXAMPLES Now, the present invention will be described in detail in reference to examples, comparative examples and use tests. However, it should be understood that the present invention is never limited by these examples. Example 1 The atmosphere in a 1-liter flask equipped with a stirrer, a dropping funnel, a thermometer, a condenser and a nitrogen replacing device was first replaced with a nitrogen gas, and 500 g of ethyl carbitol which had been dehydrated and purified and 2.52 g (0.0101 mole) of 3,3'-diaminodiphenyl sulfone (hereinafter referred to simply as "DDS") were then placed therein, followed by stirring to obtain a uniform solution. While this solution was maintained at a temperature of 30 to 35°C, 6.54 g (0.0203 mole) of 3,3',4,4'-benzophenonetetracarboxylic dianhydride (hereinafter referred to simply as "BTDA" ) was added thereto, and reaction gas then performed for 5 hours. Afterward, 4.33 g (0.0203 mole) of aminophenyltrimethoxysilane (hereinafter referred to simply as "APMS") (meta/para = 46/54) was further added thereto and temperature was then elevated up to 150°C, and reaction was performed for 3 hours. Next, 42.28 g (0.203 mole) of tetraethoxysilane, 5 g of acetic acid and 35 g of water were added to the flask, and reaction was further carried out at 60°C for 18 hours. At this point of time, unreacted tetraethoxysilane was not detected in the solution any more. The thus obtained silicon-containing soluble polyimide precursor of the present invention was transparent an reddish brown, and had a logarithmic viscosity number of 0.15 dl/g. The infrared absorption spectrum of the precursor is shown in Fig. 1. This spectrum indicates that the precursor contained a great deal of an imido group but scarcely contained amic acid. Example 2 By the use of the same devices and procedure as in Example 1, 26.31 g (0.0608 mole) of bis[4-(4-aminophenoxy)phenyl] sulfone (hereinafter referred to simply as "BAPS") was mixed with 500 g of ethyl carbitol and 22.39 g (0.0695 mole) of BTDA was then added thereto, and reaction was performed at 30°C for 6 hours. Furthermore, 3.34 g (0.0157 mole) of APMS (meta/para = 46/54) was added thereto, and reaction was carried out for 2 hours. Afterward, thereto were added 36.20 g (0.174 mole) of tetraethoxysilane, 6.5 g of acetic acid and 6 g of water, followed by reaction at 60°C for 20 hours. At this point of time, unreacted tetraethoxysilane was not detected any more. The thus obtained silicon-containing soluble polyimide precursor of the present invention had a logarithmic viscosity number of 0.32 dl/g. According to infrared absorption spectrum, this precursor contained a great deal of amic acid but scarcely contained an imide group. Example 3 By the use of the same devices and procedure as in Example 1, 31.74 g (0.143 mole) of 3-aminopropyltriethoxysilane (hereinafter referred to simply as "APS-E"), 10.91 g (0.0717 mole) of tetramethoxysilane and 14.35 g (0.0716 mole) of 4,4'-diamino diphenyl ether (hereinafter referred to simply as "DDE") were added to and dissolved in a mixed solvent of 250 g of N-methyl-2-pyrrolidone and 250 g of 2-methoxy ethanol in order to prepare a uniform solution. While this solution was maintained at a temperature of 25°C, 31.27 g (0.143 mole) of pyromellitic dianhydride was added thereto, and reaction was performed for 2 hours and further continued at 60°C for 6 hours. Afterward, 5.5 g of acetic acid and 4 g of water were added thereto, and reaction was then carried out at 80°C for 4 hours. At this point, unreacted tetramethoxysilane was not detected in the solution any more. The thus obtained silicon-containing soluble polyimide precursor of the present invention had a logarithmic viscosity number of 0.082 dl/g. According to infrared absorption spectrum, this precursor contained a great deal of amic acid but scarcely contained an imide group. Example 4 By the use of the same devices and procedure as in Example 1, 16.28 g (0.0813 mole) of DDE was dissolved in a mixed solvent of 300 g of N-methyl-2-pyrrolidone and 200 g of 2-methoxy methanol to prepare a uniform solution. To this solution was added 33.81 g (0.108 mole) of bis[3,4-dicarboxyphenyl) sulfone dianhydride (hereinafter referred to simply as "DSDA"), and reaction was then performed at 20°C for 5 hours. Afterward, 11.41 g (0.0596 mole) of 3-aminopropylmethyldiethoxysilane was added thereto, and reaction was further carried out at 90°C for 2 hours. To this solution were added 1.65 g (0.0108 mole) of tetramethoxysilane, 2.5 g of concentrated hydrochloric acid and 3 g of water, followed by reaction at 50°C for 10 hours. At this point, tetramethoxysilane was not detected any more. The thus obtained silicon-containing soluble polyimide precursor of the present invention had a logarithmic viscosity number of 0.20 dl/g. According to infrared absorption spectrum, it was confirmed that there coexisted amic acid and an imido group in this precursor. Example 5 By the use of the same devices and procedure as in Example 1, 2.57 g (0.0104 mole) of DDS and 5.28 g (0.0238 mole) of APS-E were added to 500 g of methyl carbitol, and 7.69 g (0.0239 mole) of BTDA was further added thereto, reaction was then performed at 160°C for 12 hours. Furthermore, thereto were added 72.65 g (0.477 mole) of tetramethoxysilane, 12 g of acetic acid and 25 g of water, followed by reaction at 75°C for 12 hours. At this point, tetramethoxysilane was not detected any more. The thus obtained silicon-containing soluble polyimide precursor of the present invention had a logarithmic viscosity number of 0.27 dl/g. According to infrared absorption spectrum, this precursor contained a great deal of an imido group but scarcely contained amic acid. Example 6 By the use of the same devices and procedure as in Example 1, 17.98 g (0.0502 mole) of DSDA was added to 500 g 2-ethoxy ethanol, and the esterification of the acid anhydride was carried out under reflux at 135°C for 5 hours. Furthermore, to this solution were added 10.86 g (0.0251 mole) of BAPS and 7.65 g (0.0427 mole) of 3-aminopropyltrimethoxysilane, and it was then refluxed at 135°C for 6 hours. This solution was cooled, and while it was maintained at a temperature of 70°C, 38.22 g (0.251 mole) of tetramethoxysilane, 15 g of acetic acid and 40 g of water were added thereto, followed by reaction at 70°C for 12 hours. At this point, unreacted trimethoxysilane was not detected any more. The thus obtained silicon-containing, soluble polyimide precursor of the present invention had a logarithmic viscosity number of 0.77 dl/g. According to infrared absorption spectrum, this precursor contained a great deal of an imido group but scarcely contained amic acid. Example 7 By the use of the same devices and procedure as in Example 1, 14.41 g (0.0490 mole) of 3,3',4,4'-biphenyltetracarboxylic dianhydride and 15.78 g (0.0490 mole) of BTDA were added to 500 g of ethyl carbitol, and reaction was carried out at 150°C for 3 hours to esterify the acid anhydride. Furthermore, to this solution were added 14.59 g of DDS and 21.69 g (0.0980 mole) of APS-E, and reaction was then performed at 150°C for 5 hours. This solution was cooled to 60°C, and 14.91 g (0.0980 mole) of tetramethoxysilane, 4 g of acetic acid and 3 g of water were added thereto, followed by reaction for 21 hours. At this point, unreacted tetramethoxysilane was not detected any more. The thus obtained silicon-containing soluble polyimide precursor of the present invention had a logarithmic viscosity number of 1.30 dl/g. According to infrared absorption spectrum, this precursor contained a great deal of an imido group but scarcely contained amic acid. Example 8 The same procedure as in Example 4 was repeated with the exception that concentrated hydrochloric acid was not added and that the secondary reaction was performed for 22 hours. When the seconday reaction was over, unreacted tetramethoxysilane was not detected in the reaction solution any more. The thus obtained silicon-containing soluble polyimide precursor of the present invention had a logarithmic viscosity number of 0.023 dl/g. According to infrared absorption spectrum, it was confirmed that there coexisted amic acid and an imido group in this precursor. Example 9 The same procedure as in Example 4 was repeated with the exception that water was not added and that the secondary reaction was performed for 16 hours. When the secondary reaction was over, unreacted tetramethoxysilane was not detected in the reaction solution any more. The thus obtained silicon-containing soluble polyimide precursor of the present invention had a logarithmic viscosity number of 0.021 dl/g. According to infrared absorption spectrum, it was confirmed that there coexisted amic acid and an imido group in this precursor. Example 10 The same procedure as in Example 4 was repeated with the exception that concentrated hydrochloric acid and water were not added and that the secondary reaction was performed for 28 hours. When the secondary reaction was over, unreacted tetramethoxysilane was not detected in the reaction solution any more. The thus obtained silicon-containing soluble polyimide precursor of the present invention had a logarithmic viscosity number of 0.024 dl/g. According to infrared absorption spectrum, it was confirmed that there coexisted amic acid and an imido group in this precursor. Comparative Example 1 By the use of the same devices and procedure as in Example 1, 55.56 g (0.267 mole) of tetraethoxysilane, 5.5 g of acetic acid and 60 g of water were added to 500 g of methyl carbitol, and reaction was then carried out at 80°C for 18 hours. At this point of time, unreacted tetraethoxysilane was not detected in the reaction solution any more, and a transparent tetraethoxysilane oligomer was obtained. Comparative Example 2 By the use of the same devices and procedure as in Example 1, 44.61 g (0.103 mole) of BAPS was added to and dissolved in 500 g of ethyl carbitol. While this solution was maintained at a temperature of 25°C, 37.98 g (0.118 mole) of BTDA was added thereto, and reaction was then performed for 5 hours. Afterward, 5.56 g (0.0265 mole) of APMS was further added thereto, and reaction was then performed for 2 hours in order to obtain a polyamic acid solution. For reference, Table 1 shows amounts of the raw materials used in Examples 1 to 10 and Comparative Examples 1 and 2, i.e., a , b , c and d moles, as well as values of (2 b + c )/ a and d / a . a mole b mole c mole d mole (2b+c)/a d/a Example 1 0.0203 0.0101 0.0203 0.203 2.00 10 Example 2 0.0695 0.0608 0.0157 0.174 1.98 2.50 Example 3 0.143 0.0716 0.143 0.0717 2.00 0.50 Example 4 0.108 0.0813 0.0596 0.0108 2.06 0.1 Example 5 0.0239 0.0104 0.0238 0.477 1.87 20.0 Example 6 0.0502 0.0251 0.0427 0.251 1.85 5 Example 7 0.0980 0.0588 0.0980 0.0980 2.20 1 Example 8 0.108 0.0813 0.0596 0.0108 2.06 0.1 Example 9 0.108 0.0813 0.0596 0.0108 2.06 0.1 Example 10 0.108 0.0813 0.0596 0.0108 2.06 0.1 Comp. Ex. 1 - - - 0.267 - - Comp. Ex. 2 0.118 0.103 0.0265 - 1.97 0 Examples 11 to 20 and Comparative Examples 3 and 4 Glass plates were coated with the respective varnishes synthesized in Examples 1 to 10 and Comparative Examples 1 and 2, and calcination was then given at 300°C for 1 hour in an electric furnace, so that each coating film having a thickness of 1.5 µm was formed on the glass plate. Coating properties, surface hardness and heat resistance were evaluated by heating the thus formed coating films up to a high temperature, and then measuring weight reduction thereof. The results are set forth in Table 2. Incidentally, Fig. 1 shows the infrared absorption spectrum of the cured material according to the present invention obtained in Example 11. The surface hardness in Table 2 indicates pencile hardness measured in accordance with JIS K5400. The coating properties were evaluated by visually observing the appearance of the coating films formed on the glass plates through the above-mentioned calcination, and the estimation of "good" was given in the case that requirements of (1) the formation of the coating film having substantially uniform thickness all over the glass plate, (2) smoothness on the coating film and (3) no cracks were satisfied. Weight reduction was expressed in "weight reduction (%)" in the case that the temperature of each coating film was elevated from ordimary temperature to 700°C at a temperature rise rate of 10°C/minute by the use of a thermobalance TGD 5000 made by Shinku Riko Co., Ltd. Coating Liquid Coating Properties Surface Hardness Weight Reduction (%) Example 11 Example 1 Good ≧9H 8.7 Example 12 Example 2 Good ≧9H 15.6 Example 13 Example 3 Good 8H 26.2 Example 14 Example 4 Good 8H 29.8 Example 15 Example 5 Good ≧9H 10.2 Example 16 Example 6 Good ≧9H 20.3 Example 17 Example 7 Good ≧9H 24.2 Example 18 Example 8 Good ≧9H 29.8 Example 19 Example 9 Good ≦9H 29.7 Example 20 Example 10 Good ≧9H 29.5 Comp. Ex. 3 Comp. Ex. 1 Cracks - 1.1 Comp. Ex. 4 Comp. Ex. 2 Good 3H 43.7

Claims: A silicon-containing polyimide precursor which has a logarithmic viscosity number of 0.05 to 5 dl/g when measured at a concentration of 0.5 g/dl at 30 ± 0.01°C in N-methyl-2-pyrrolidone and which comprises a compound of the formula: [R⁴ 3-k Si-R³-L-(R²-L) n -R³-SiR⁴ 3-m O (k+m)/2 ] p [SiO₂] q (I) in which R² is an aliphatic group containing from 2 to 12 carbon atoms, an alicyclic group containing from 4 to 30 carbon atoms, an aromatic aliphatic group containing from 6 to 30 carbon atoms, a carbocyclic aromatic group containing from 6 to 30 carbon atoms, a polysiloxane group of the formula: (in which each group R⁵ is a C₁-C₄ alkylene group, a C₇-C₁₀ alkylene-phenylene group, a C₇-C₁₀ alkylenoxy-phenylene group or a phenylene group, each group R⁶ is a C₁-C₆ alkyl group, a phenyl group or an alkylphenyl group containing up to 12 carbon atoms, and ℓ has a value of from 1 to 100), or a group of the formula: (in which R⁷ is an aliphatic group containing up to 8 carbon atoms, an aromatic aliphatic group or a hydrogen atom): R³ is a C₁-C₄ alkylene, C₇-C₁₀ alkylenephenylene, C₇ - C₁₀ alkylenoxy-phenylene or phenylene group); each R⁴ is a C₁-C₄ alkyl group, a phenyl group or an alkyl-substituted phenyl containing up to 12 carbon atoms; k and m are each 0, 1, 2 or 3 and the sum of k and m is 1 or more; n is an integer of 1 or more; each of p and q is a positive integer; and L is a group: (in which R¹ is a tetravalent carbocyclic aromatic group, and the two carbonyl group of an imide group, or one amide group and one carboxyl group are respectively attached ortho to each other), said logarithmic viscosity number being ηinh η inh = ℓn(η/η o )/C (wherein η is the viscosity measured at 30 ± 0.01°C at a concentration of 0.5 g/dl in a solvent by the use of a Ubbelohde's viscometer, η o is the viscosity of the solvent at the same temperature by the use of the same viscometre, and C is a concentration of 0.5 g/dl). A precursor as claimed in Claim 1 wherein R² is a group (wherein r is 0 or 1 and the groups R³ are phenylene groups). A precursor as claimed in claim 1 or claim 2 in which k and m are each 3. A cured material derived from a silicon-containing polyimide and comprising a component of the formula: [R⁴ 3-k Si-R³-L¹-(R²-L¹) n -R³-SiR⁴ 3-m O (k+m)/2 ] v [SiO₂] w (I') in which R², R³, R⁴, k , m and n have the meanings defined in claim 1, L¹ is a group: (in which R¹ is as defined in claim 1); and v and w are each positive integers. A cured material as claimed in claim 4 in which R² and R³ are as defined in claim 2. A cured material as claimed in claim 4 in which k and m are each 3. A method for preparing a silicon-containing soluble polyimide precursor comprising a component represented of formula (I) as defined in claim 1 and having logarithmic viscosity number of 0.05 to 5 dl/g measured as defined in claim 1, which method comprises mixing together five compounds, namely: a moles of a dianhydride of the formula: (in which R¹ has the meaning defined above); b moles of a diamine of the formula: H₂N - R² - NH₂ (VII') (in which R² has the meaning defined above); c moles of amino-silicon compounds of the formulae: H₂N-R³-SiR⁴ 3-k X' k (VIII) and H₂N-R³-SiR⁴ 3-m X' m (VIII') (in which R³, R⁴, k and m have the meanings defined above and X' is a halogen atom or a hydroxyl, alkoxy or acetoxy group); and d moles of a silicon compound of the formula: SiX² ₄ (IX) (in which X² has the range of meanings defined for X' above); the value of the ratio (2b + c)/a being from 1.8 to 2.2 and the value of the ratio d/a being from 0.03 to 33; and reacting the mixture, in the presence of a solvent, at a temperature of 0 to 200°C for 0.2 to 20 hours; or alternatively mixing the compounds of formulae (VI) to (VIII') in any desired order; reacting the mixture at a temperature of 0 to 200°C for a period of 0.2 to 10 hours; then adding the compound of formula (IX); adding an acid and/or a small amount of water thereto if necessary; and reacting the mixture at 50 to 200°C for 0.2 to 30 hours. A method for preparing a cured silicon-containing polyimide which comprises heating a precursor as claimed in any one of claims 1 - 4 at a temperature of 50 to 500°C to vaporize the solvent and to simultaneously crosslink/cure the precursor.

Inventors: KATO HARUO, KUNIMUNE KOICHI, KUTSUZAWA YOSHIYA, KATO, HARUO, KUNIMUNE, KOICHI, KUTSUZAWA, YOSHIYA
Applicants: CHISSO CORP, CHISSO CORPORATION
Application year: 1988
Main classification: C08G73
IPC codes: C08G73, C08G77