IC CARD

Abstract: An IC card with a built-in IC, comprising an external power supply terminal (1) and a solar battery (5), the external power supply terminal is connected to an IC internal power supply line (2) through a first switch (3), the solar battery is connected to the IC internal power supply line through a second switch (6), and a voltage detection circuit (7) is connected to the external power supply terminal. When the voltage detection circuit detects a voltage on the external power supply terminal, it switches ON the first switch and switches OFF the second switch. When it does not detect a voltage on the external power supply terminal it switches OFF the first switch and switches ON the second switch.

Description: Background of the invention This invention relates to an IC card according to the preamble of claim 1. The document EP-A-0167044 describes an intelligent card with a built in IC comprising an external power supply terminal, and with a solar cell for loading a secondary battery to provide power to the built-in IC when the card is not connected to an external terminal device. The document US-A-4,654,829 describes a portable, nonvolatile read/write memory module being a monolithic integrated circuit comprising a power comparator and switching circuit having several external terminals. One of these external terminals is provided for supplying a supply voltage VCCI, another external terminal is used for supplying an enable signal and a third terminal is used for supplying a battery voltage BAT which is provided by a lithium battery. When VCCI is greater than BAT then VCCI is switched to the output of the power comparator and switching circuit. When BAT is greater than VCCI, then BAT is switched to the output being connected to an internal line of the Monolithic integrated circuit. An example of an IC card employing a solar battery, a keyboard and a display unit is disclosed in EP-A-0 167 044 which corresponds to Japanese Patent Application Laid-open No. 1986/5389. Fig. 1A and Fig. 1B are front and rear perspective views showing such an IC card. This card comprises a solar battery or solar cell and a secondary battery, and thereby enables data input through the keyboard, processing of such data by means of the CPU and display of such data by means of the display unit. The keyboard may include a key for transaction (TR), a key for reference or inquiry (RE) and a key for start (ST). Moreover, the IC card has an external terminal, so that it can be connected, for example, to a bank terminal, such as a teller machine, and thus can be used as an electronic pass book. When the IC card connected to an external equipment such as a bank terminal, is used in an on-line mode the power for the IC, the display unit, etc. of the card is supplied from the external equipment through the external power supply terminal. When the card is used in an off-line mode, in which the card is not connected to an external equipment, the power for the IC, the display unit, etc. of the card is supplied from the internal solar battery of the card. Therefore, the IC card normally employs a configuration in which the external power supply terminal is directly connected to the IC and the display unit of the card, and the solar battery is also directly connected to the IC and the display unit of the card and hence to the external power supply terminal. However, the solar batteries, especially amorphous solar batteries which are widely being used recently, are vulnerable to reverse voltages, and particularly to static voltages. Therefore, the reverse withstand voltage against static electricity is at most of the order of a few tens of volts, which is extremely small compared with the voltage of a few hundred volts of ICs formed of monocrystalline silicon and having provision of protection against static electricity. In addition, it must also be considered that such cards may be used in an environment where static electricity is easy to occur. For example the cards are used as electronic pass books and inserted in a clothing pocket. SUMMARY OF THE INVENTION An object of the invention is to provide a protection for a solar battery in an IC card against a static electricity or any other abnormal voltage which may appear on the external power supply terminal. This object is solved by the IC card according to claim 1. Accordingly, the present invention comprises substantially a voltage detection circuit for detecting the voltage on the external power supply terminal, a first p-channel MOSFET between the external power supply terminal and the IC internal power supply line, and a second p-channel MOSFET between the solar battery and the IC internal power supply line, and then switching the first and the second p-channel MOSFET ON and OFF depending upon the presence or absence of a voltage at the external power supply terminal as detected by the voltage detection circuit. When a voltage is detected at the external power supply terminal, i.e., when the card is used in the on-line mode, the first p-channel MOSFET is switched ON and the second p-channel MOSFET is switched OFF. Therefore, power is supplied to the IC internal power supply line from the external equipment such as a bank terminal and the solar battery is isolated. When a voltage is not detected at the external power supply terminal, i.e., when the card is used in the off-line mode, the first p-channel MOSFET is switched OFF and the second p-channel MOSFET is switched ON. Therefore, in this case, power is supplied to the IC internal power supply line from the solar battery and the external power supply terminal becomes isolated from the solar battery. There can be no damage to the card even if static electricity is generated at the external power supply terminal. In case of the on-line mode, the solar battery is isolated from the IC internal circuitry and the external power supply terminal, and is protected from any abnormal voltages which may appear on the external equipment. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1A and Fig. 1B are perspective views showing the front and the reverse surfaces of the prior art IC card. Fig. 2 is a circuit diagram of an embodiment of the circuit of the present invention. DETAILED DESCRIPTION OF THE EMBODIMENTS The external views of the IC card according to the invention can be identical to those of Fig. 1A and Fig. 1B. Fig. 2 is a circuit diagram of an embodiment of the present invention. The IC card of this embodiment has an external power supply terminal 1, which is one of the six external terminals provided on the back surface of the IC card (Fig. 1B). A +5V power supply voltage is supplied through this terminal when the card is connected to an external equipment such as a bank terminal. A first p-channel MOS FET 3 is connected between the external power supply terminal 1 and an IC internal power supply line 2. The IC internal power supply line 2 supplies power to an internal circuit 10 including a CPU, memory, etc. of the card. The first p-channel MOSFET 3 having its source connected to the external power supply terminal 1, and having its drain connected to the internal power supply line 2. The source and the gate of this MOSFET are connected together through resistor 4. An n-channel MOS FET 8 is provided, with its drain connected to the gate of the p-channel MOS FET 3 and its source grounded. A second p-channel MOS FET 6 is connected between the IC internal power supply line 2 and the solar battery 5. The second p-channel MOSFET 6 having its source connected to the solar battery 5 and having its drain connected to the internal power supply line 2. The solar battery 5 is formed of amorphous silicon and is of a two-to three- layer configuration, and generates a voltage of 1.5V to 2.0V in daylight. A voltage detection circuit 7 is connected to the external power supply terminal 1 and its output is connected to the first p-channel MOS FET 3 through FET 8 and to the second p-channel MOS FET 6 through a buffer 9. The threshold voltage of the voltage detection circuit 7 is set at about 1.8V in this embodiment. The voltage detection circuit 7 therefore produces an output of "High" level when it detects a voltage higher than 1.8V on the external power supply terminal 1 and produces an output of "Low" level when it does not detect a voltage higher than 1.8V on the external power supply terminal 1. The n-channel MOS FET 8 receives the output of the voltage detection circuit 7 at its gate and is turned on when the output of the voltage detection circuit 7 is "High" thereby to turn on the p-channel MOS FET 3. The MOS FET 6 receives, through the buffer 9, the output of the voltage detection circuit to be turned on when the output of the voltage detection circuit 7 is "High". The voltage detection circuit 7 of the illustrated example comprises a series connection of a plurality of, e.g., two, p-channel MOS FETs 7a and 7b. The source of the p-channel MOS FET 7a at one end of the series connection is connected to the external power supply terminal 1. The drain of the p-channel MOS FET 7b at the other end of the series connection is connected to an output terminal 7e of the voltage detection circuit. Each of the p-channel MOS FETs 7a and 7b has its gate connected to its drain. The voltage detection circuit 7 further comprises an n-channel MOS FET 7c having its drain connected to the other end of the series connection, having its source grounded, and having its gate connected to a terminal 7f to receive a fixed bias voltage supplied from the internal circuit 10. The FET 7c acts as load means which allows a constant current through its drain-source circuit in accordance with a fixed bias voltage, e.g., 1.0V. When the voltage level at the external power supply terminal 1 is higher than 1.8V, FET 8 becomes ON and the first p-channel MOS FET 3 turns ON as well, i.e., goes to a conducting state. At the same time, the output of buffer 9 becomes "High" turning the second p-channel MOS FET 6 OFF, and therefore the solar battery becomes isolated from the external power supply terminal 1. When the voltage level at the external power supply terminal is less than 1.8V, FET 8 becomes OFF, thus switching OFF the first p-channel MOS FET 3. At the same time, the output of the buffer 9 becomes "Low", turning the second p-channel MOS FET 6 ON and setting it to a conducting state. In this case, the solar battery 5 supplies a voltage of 1.5 to 2.0 V to IC 2 and also becomes isolated from the external power supply terminal 1. The above mentioned circuit configuration protects the solar battery from static electricity and other abnormal voltages which may appear on the external power supply terminal 1, which is exposed. This is accomplished by switching OFF the first p-channel MOS FET 3 in the off-line mode and by switching OFF the second p-channel MOS FET 6 in the on-line mode. The circuit components of the above mentioned circuit, i.e., the voltage detection circuit 7, the first p-channel MOS FET 3, the second p-channel MOS FET 6, the FET 8, the resistor 4, and the inverter 9 are all integrated on the same semiconductor chip with the internal circuit 10 including the CPU and memory. Therefore, the first p-channel MOS FET 3, the second p-channel MOS FET 6 etc. can be manufactured by ordinary semiconductor processes to have a withstand voltage of several hundred volts against static electricity. As described above, this invention relates to an IC card comprising an IC, a solar battery, and an external power supply terminal. It also includes a voltage detection circuit connected to the external power supply terminal to turn ON and OFF a first and a second p-channel MOS FET connected to the solar battery, depending upon the results of the detection of voltage. Therefore, this invention provides protection, with the use of an extremely simple circuit, the solar battery from static and other abnormal voltage that may be generated on the external terminal of IC card. In addition, the IC card of this invention also prevents application to the solar battery 5 of DC 5V voltages supplied from external equipment in case of the on-line operation of the card, and thus prevents the degradation of the solar battery.

Claims: IC card comprising an external power supply terminal (1), a solar battery (5) and a built-in IC (2, 3, 4, 6, 7, 8, 9 and 10), said built-in IC comprising: an IC internal power supply line (2), characterised by a first p-channel MOSFET (3) having a source connected to the external power supply terminal (1) and a drain connected to said IC internal power supply line (2); a second p-channel MOSFET (6) having a drain connected to said IC internal power supply line (2) and a source connected to the solar battery (5); a voltage detection circuit (7) having an input connected to the external power supply terminal, an output (7e), a series connection of p-channel MOSFETs (7a, 7b) disposed between the input and the output (7e) for providing a voltage drop to the voltage applied to the external power supply terminal (1), and a current sinking load (7c) connected to the output of the voltage detection circuit; an n-channel MOSFET (8) having a gate connected to said output (7e), a drain connected to the gate of said first p-channel MOSFET, and a source grounded; a buffer (9) connected between said output (7e) and the gate of said second p-channel MOSFET (6); wherein when the voltage on the external power supply terminal (1) exceeds the sum of the threshold voltage of the n-channel MOSFET (8) and the voltage drop across said series connection of p-channel MOSFETs (7a, 7b), said first p-channel MOSFET (3) is on and said second p-channel MOSFET (6) is off, and when the voltage on the external power supply terminal (1) is not greater than the sum of the threshold voltage of the n-channel MOSFET (8) and the voltage drop across said series connection of p-channel MOSFETs (7a, 7b), said first p-channel MOSFET (3) is off and said second p-channel MOSFET (6) is on. IC card according to claim 1, wherein the first p-channel MOS FET (3) has its gate connected through a resistor to the source. IC card according to claim 1, wherein the series connection of p-channel MOS FETs (7a, 7b) of the voltage detection circuit comprises two p-channel MOS FETs, one (7a) of the two p-channel MOS FETs having its source connected to the external power supply terminal (1), the other (7b) of the two p-channel MOS FETs having its drain connected to the output (7e) of the voltage detection circuit, and its source connected to the drain of the one (7a) of the two p-channel MOS FETs, wherein each of the two p-channel MOS FETs having its drain connected to its gate. IC card according to claim 3, wherein the current sinking load (7c) of the voltage detection circuit (7) comprises a n-channel MOS FET (7c) having its drain connected to the output (7e) of the voltage detection circuit, having its source grounded, and having its gate connected to receive a fixed bias voltage (BIAS).

Inventors: OHTA, SATOSHI OKI ELECTRIC IND. CO., LTD., TANAGAWA, KOUZI OKI ELECTRIC IND. CO., LTD.
Applicants: OKI ELECTRIC INDUSTRY COMPANY, LIMITED
Application year: 1988
Main classification: G06K19
IPC codes: G06K19, G06K7, B42D15