NONVOLATILE SEMICONDUCTOR MEMORY DEVICE

Abstract: A nonvolatile semiconductor memory device comprises a cell transistor (32) formed of a floating gate type MOS transistor, for storing an electric charge, whose gate is connected to a control gate line layer (CG), a first selecting transistor (31) formed of an MOS tran­ sistor, whose gate is connected to a read gate line layer (RG), whose source-drain path is connected at one end to a read line layer (RL), and at the other end to one terminal of the source-drain path of the cell tran­ sistor, and a second selecting transistor (32) formed of an MOS transistor, whose gate is connected to a write gate line layer (WG), whose source-drain path is con­ nected at one end to a write line layer (WL), and at the other end to the other terminal of the source-drain path of a cell transistor. A power source voltage (Vcc) of 5 V can be supplied to the read line layer (RL) in the read mode.

Description: This invention relates to a nonvolatile semiconductor memory device comprising a nonvolatile transistor and allowing the stored data to be replaced by another data. This type of nonvolatile semiconductor memory device is well known as an E²ROM (electrically erasable and programmable read only memory). One known memory cell for use in the E²PROM, is a floating gate type memory cell, in which the floating gate electrode partially overlaps a thin insulating film formed on the diffusion layer. Fig. 1 is a sectional view showing the structure of a prior art memory cell of this type. N type diffusion layers 41, 42 and 43 are formed in the surface region of P type semiconductor substrate 40. Channel region 44 is formed between diffusion layers 41 and 42. A relatively thick insulating film 45 is formed on channel region 44. Electrode 46 made of polysilicon is formed on the insulating layer 45. Electrode 46 extends over N type diffusion layer 42. A portion of electrode 46 projects toward diffusion layer 42. Insulating film 47 exists between diffusion layer 42 and a portion of electrode 46. Insulating film 47 is thinner than insulating film 45. Insulating film 48 is formed on electrode 46. Electrode 49 made of polysilicon is formed on insulating film 48. Channel region 50 is also formed between diffusion layers 42 and 43. Relatively thick insulating film 51 is formed on channel region 50. Further, electrode 52 made of polysilicon is formed on insulating film 51. Source interconnection S is connected to diffusion layer 41, and bit line BL is connected to diffusion layer 43. Electrode 46 is used as a floating gate electrode, and electrode 49 is used as a control gate electrode, and electrode 52 is used as gate electrode. Control gate electrode 49 is connected to control gate wire CG, and select gate wire SG is connected to gate electrode 52. Fig. 2 shows an equivalent circuit of the prior art memory cell shown in Fig. 1. As is shown in the figure, transistor 61 is of the floating gate type in which diffusion layers 41 and 42 are a source and a drain, respectively. This transistor constitutes a memory transistor for storing data. Transistor 62 is of the MOS type in which diffusion layers 42 and 43 are a source and a drain, respectively. This transistor is for selecting memory transistor 61. Operation modes of such memory cells includes a data-erase mode, a data-write mode and a data-read mode. Fig. 3 tabulates the voltages applied to source interconnection S, bit line BL, control gate wire CG, and selecting gate wire SG. Three types of power source voltages are used in the integrated circuit including the E²PROM: GND, Vcc and Vpp. GND = 0 V, and Vcc = 5 V. Power source voltage Vpp is not supplied from an external power supply, but formed by increasing the Vcc voltage in the IC circuit. The data-erase mode will first be described. This mode is also called an electron injection mode. In the mode, electrons are injected into floating gate electrode 46 to increase the threshold voltage V TH of memory transistor 61. In this mode, BL = 0 V, SG = 20 V, CG = 20 V, and S = 0 V. By setting SG voltage at 20 V, selecting transistor 62 is turned on, and the potential at N type diffusion layer 42 becomes to the BL potential, i.e., 0 V. Floating gate electrode 46 is coupled with a high voltage of CG, 20 V. Under this condition, a high electric field is applied to thin insulating film 47 formed between floating gate electrode 46 and N type diffusion layer 42. Consequently, floating gate electrode 46 is injected with electrons from N type diffusion layer 42 by a tunnel current. As a result, the threshold voltage V TH of memory transistor 32 increases to, for example, + 8 V. The data-write mode is called an electron-emission mode in which electrons injected into floating gate electrode 46 are discharged therefrom to decrease the threshold voltage V TH of memory transistor 61. In this mode, BL = 20 V, SG = 20 V, CG = 0 V, and S = 5 V. By setting SG at 20 V, selecting transistor 62 is turned on, and N type diffusion layer 42 becomes to the BL potential, i.e., 20 V. Therefore, a high electric field whose direction is opposite to that of the erase mode, is applied to thin insulating film 47. Consequently, the electrons is discharged from floating gate electrode 46 to N type diffusion layer 42. As a result, the threshold voltage V TH of memory transistor 61 decreases to, for example, - 5 V. In the data-read mode, BL = 1 V, SG = 5 V, CG = 0 V, and S = 0 V. By setting SG at 5 V, selecting transistor 62 is turned on, and N type diffusion layer 42 becomes to the BL potential, i.e., 1 V. At this time, if electrons have been injected into floating gate electrode 46, the threshold voltage of memory transistor 61 has been increased. Therefore, memory transistor 61 is kept to be turned off. No current flows through BL and S, and BL is kept at 1 V. On the other hand, if electrons have been emitted from floating gate electrode 46, the threshold voltage of memory transistor 61 has been descreased. Therefore, transistor 61 is turned on. At this time, a current flows from floating gate electrode 46 toward N type diffusion layer 42, and the potential of BL becomes to the S potential, i.e., approximately 0 V. A potential difference between 1 V and 0 V on bit line BL is amplified by a sense amplifier (not shown) connected to bit line BL, to determine a logical "1" or a logical "0". An existing problem arises from the fact that a small potential difference between 1 V and 0 V occurring on bit line BL is amplified by a sense amplifier. In other words, a small potential difference is used, in order to determine a logical "1" or a logical "0" by a sense amplifier. The reason why the bit line voltage BL must be held at about 1 V, and not at large voltage 5 V, in the read mode, will be described. When BL = 5 V, the voltage of N type diffusion layer 42 becomes approximtely 5 V. Under this condition, an electric field, which is caused by CG = 0 V and N type diffusion layer 42 = 5 V, is applied to thin insulating film 47. When the electric fields in the read and write modes are compared, the directions of the electric fields are the same, but the intensities are different. The electric field intensity in the read mode is lower than that in the write mode. Therefore, when electrons are injected into the cell transistor, and the cell transistor is subjected to the read mode for a long time, electrons are emitted from the cell transistor due to the tunnel effect with time, so that the threshold voltage of the cell transistor gradually drops. When a certain period of time has elapsed, an erroneous logical operation may be caused in the circuit. Such a phenomenon is called a "soft write" (weak write) phenomenon. The characteristic of the soft write phenomenon with respect to the time is called a read-retention characteristic (the data-retention characteristic in the read mode). To improve the the read-retention characteristic, a possible way is to decrease the bit line voltage in the read mode. In this approach, however, a difference between the bit line potential when the electrons are being injected into the cell transistor and the bit line potential when electrons are emitted from the cell transistor, is small, to narrow the logical margin in the read mode. For this reason, the bit line potential in the read mode is limited to about 1 V. On the other hand, to cope with the small logical margin problem, a high performance sense amplifier is designed. However, this causes some problems. A first problem resides in the complicated circuit of the sense amplifier. To fabricate such a complicated amplifier circuit into a semiconductor chip, a large area is required on the semiconductor chip, resulting in increase of cost of manufacture. A second problem resides in the reduced margin for the power source voltage in the read mode This is undesirable for the low voltage operation. A third problem resides in the need for the constant voltage source of 1 V (intermediate voltage) to be supplied to the bit line. The prior art memory device must comprise a circuit for forming such an intermediate voltage, resulting in increase of power consumption. A fourth problem resides in a long access time due to the complicated structure of the sense amplifier. As described above, the prior art nonvolatile memory device involves many problems; the large area required on the semiconductor chip, instable low voltage operation, large power consumption, and the long access time. Prior art document EP-A2-0 053 075 discloses a nonvolatile memory in which a memory cell is comprised of a programming transistor and a selecting transistor. The selecting transistor is used for accessing the programming transistor when the memory cell is specified by an address signal. The programming transistor functions to store, read and write data alternately. Both transistors are connected in series with each other along a bit line, and to a ground. The gate of the selecting transistor is connected to a word line. The control gate CG of the programming transistor is connected to a program line which is arranged in parallel with the word line. Prior art document US-A-4 258 378 discloses a memory device in which each cell consists of a floating gate transistor and a single selection transistor. The selection transistors of the cells can be provided on both sides of the floating gate transistor device. The transistors are turned around for programming, and voltages applied to the selection transistors in the read mode are such that a write line layer is at ground and a read line layer is held at an operation potential. It is an object of this invention to provide a nonvolatile semiconductor memory device which is featured by low operation voltage, low power consumption, high operation speed, and the simple periphery circuitry including the sense amplifier, wherein the read voltage swing is increased without adversely affecting the data-retention characteristic in the read-mode, i.e. without having to apply a large voltage across the tunnelling region of the memory transistor. To solve this object the present invention provides a nonvolatile semiconductor memory device as stated in claim 1. This invention can be more fully understood from the following detailed description when taken in conjunction with the accompanying drawings, in which: Fig. 1 is a cross sectional view showing the structure of a conventional memory cell used in a non-volatile semiconductor memory device; Fig. 2 is an equivalent circuit of the memory cell shown in Fig. 1; Fig. 3 shows a table denoting the voltages at varies portions in the respective modes of the memory call of Fig. 1; Fig. 4 is a cross sectional view showing the structure of a memory cell used in a nonvolatile semiconductor memory device according to this invention; Fig. 5 is an equivalent circuit of the memory cell shown in Fig. 4; Fig. 6 shows a table denoting the voltages at varies portions in the respective modes of the memory call of Fig. 4; Fig. 7 schematically shows a circuit diagram illustrating a general arrangement of an embodiment of a semiconductor memory device according to this invention; Fig. 8 schematically shows a circuit diagram illustrating a general arrangement of another embodiment of a semiconductor memory device according to this invention; Fig. 9 schematically shows a circuit diagram illustrating a general arrangement of yet another embodiment of a semiconductor memory device according to this invention; Fig. 10 shows a signal chart of the operation of the circuit shown in Fig. 9; Fig. 11 schematically shows a circuit diagram illustrating a general arrangement of a further embodiment of a semiconductor memory device according to this invention; Fig. 12 shows a signal chart of the operation of the circuit shown in Fig. 11; Fig. 13 shows a circuit diagram of a semiconductor memory device including a sense amplifier formed of an inverter and a memory cell; Fig. 14 shows an equivalent circuit of an arrangement of a memory cell according to a modification of the memory cell shown in Fig. 4; Fig. 15 shows a table denoting the voltages at varies portions of the memory cell of Fig. 14 in the respective modes; and Fig. 16 shows a cross sectional view of a memory cell according to a modification of the memory cell shown in Fig. 4. A memory cell used in a nonvolatile semiconductor memory device according to this invention is shown in Fig. 4. N type diffusion layers 11, 12, 13, and 14 are formed in the surface region of P type semiconductor substrate 10. Channel region 15 is formed between diffusion layers 11 and 12. Relatively thick insulating film 16 is formed on channel region 15. Electrode 17 made of polysilicon is formed on insulating film 16. Channel region 18 is formed between diffusion layers 12 and 13. Relatively thick insulating film 19 is also formed on channel region 18. Electrode 20 made of polysilicon is formed on insulating film 19. Electrode 20 extends over N type diffusion layer 13. A portion of extended electrode 20 projects toward diffusion layer 13. Insulating film 21 exists between diffusion layer 13 and the projected portion of extended electrode 20. The thickness of insulating film 21 is thinner than that of insulating film 19. The projected portion of extended electrode 20 is formed on insulating film 21. Insulating film 22 is formed on electrode 20. Electrode 23 made of polysilicon is formed on insulating film 22. Channel region 24 is formed between diffusion layers 13 and 14. Relatively thick insulating film 25 is also formed on channel region 24. Electrode 26 made of polysilicon is formed on insulating film. Read line RL is connected to diffusion layer 11, and write line WL is connected to diffusion layer 14. Electrodes 17 and 26 are used as gate electrodes; electrode 20 is used as a floating gate electrode; electrode 23 is used as a control gate electrode. Gate electrode 17 is connected to read gate line RG; control gate electrode 23 is connected to control gate line CG; gate electrode 26 is connected to gate line WG. Fig. 5 shows an equivalent circuit of the cell of Fig. 4. In the figure, transistor 31 is of MOS type, in which diffusion layers 11 and 12 are used as a source and a drain, respectively. This transistor is a first selecting transistor for selecting a memory transistor. Transistor 32 is of floating gate type, in which diffusion layers 12 and 13 are used as a source and a drain, respectively. This transistor is the memory transistor for storing data therein. Transistor 33 is of MOS type, in which diffusion layers 13 and 14 are used as a source and a drain, respectively. This transistor serves as a second selecting transistor. Operation modes of the memory cell of such structure includes data erase mode, data write mode, and data read mode, as in the case of the conventional memory cell. Fig. 6 tabulates the voltages supplied to read line WL, write gate line WG, control gate line CG, read gate line RG, and read line RL. In the data erase mode (electron injection mode), those voltages are set such that WL = 0 V, WG = 20 V, CG = 20 V, and RG = 0 V. In this mode, any value of voltage may be set at read line RL. By setting 20 V at WG, second selecting transistor 33 is turned on, so that N type diffusion layer 13 is at the WL potential, i.e., 0 V. The high voltage supplied to CG, i.e., 20 V, is applied to floating gate electrode 20. With 0 V supplied to RG, first selecting transistor 31 is turned off, and N type diffusion layer 12 is electrically in the floating state. As a result, a high electric field is applied to thin insulating film 21 formed between floating gate electrode 20 and N type diffusion layer 13. The electric field causes a tunnel current to flow, to inject electrons from N type diffusion layer 13 into floating gate electrode 20. Therefore, threshold voltage V TH of memory transistor 32 increases to, for example, + 8 V. In the data write mode (electron emission mode), WL = 20 V, WG = 20 V, CG = 0 V, and RG = 0 V. Also in this mode, the voltage supplied to read line RL may be set to any value. With 20 V supplied to WG, second selecting transistor 33 is turned on, so that N type diffusion layer 13 is at the WL potential, i.e., 20 V. As a result, a high electric field whose direction is opposite to that in the erase mode is applied to thin insulating film 21. The electric field causes a tunnel current to flow, to discharge the electrons from floating gate electrode 20 to N type diffusion layered 13. As a result, threshold voltage V TH of memory transistor 32 decreases to, for example, - 5 V. The basic operations of the erase mode and the read modes are substantially the same as those in the conventional memory cell. In the read mode, WL = 0 V, WG = 5 V, CG = 0 V, RG = 5 V, and RL = 5 V. By setting the voltages of RG and WG at 5 V, first and second selecting transistors 31 and 32 are turned on, and the potential of N type diffusion layer 12 is the RL potential, i.e., 5 V, and that of diffusion layer 13 is the potential of WL, 0 V. Under this condition, when electrons have been injected into floating gate electrode 20, threshold voltage V TH has been increased, and memory transistor 32 is not turned on. Accordingly, there is no current flow through read lines RL and WL, and RL is held at 5 V. When electrons have been emitted from floating gate electrode 20, threshold voltage V TH has been decreased, and memory transistor 32 is turned on. At this time, there is a current flow through read lines RL and WL, and RL becomes to the WL potential, i.e., approximately 0 V. A potential difference between 5 V and 0 V on read line RL is amplified by a sense amplifier (not shown), to determine a logical "1" or a logical "0". It is noted here that the power source voltage of 5 V used can be supplied to read line RL in the read mode. It is further noted that even when the 5 V voltage is supplied to read line RL, the read retention characteristic can be remarkably improved, while suppressing the soft write phenomenon. The reason for this is as follows. In the read mode, WG = 5 V and WL = 0 V, and thus the voltage of N type diffusion layer 13 is 0 V. In short, CG = 0 V, the voltage of floating gate electrode 20 is approximately at 0 V, and N type diffusion layer 13 is also 0 V. Under this condition, an electric field is not applied to the thin insulating film 21 formed between floating gate electrode 20 and N type diffusion layer 13. Therefore, the electron injection or emission by the tunnel effect does not occur. Fig. 7 schematically shows a circuit diagram of E²PROM device to which the nonvolatile semiconductor memory cell shown Figs. 4 and 5 is applied. In this figure, only one memory cell is shown for simplicity of illustration. The memory cell has first and second selecting transistors 31 and 32 and memory transistor 32. Resistor 34 as a load circuit is connected between read line RL and reading power source source Vcc. Read line RL is connected to the input terminal of sense amplifier 35. Assuming that resistance of resistor 34 is Rr, resistance between RL and WL taken when electrons are charged into memory cell 32 is Roff, and resistance between RL and WL taken when electrons are discharged from is Ron. Then, resistance Rr is selected as given below Roff » Rr » Ron (1) In this memory device, the voltage on read line RL is 5 V or 0 V depending on the electron injection or electron emission to or from memory cell 32. That is to say, the voltage on read line RL fully swings between 5 V and 0 V. Thus, if power source voltage Vcc is decreased, a satisfactory operation margin can be secured for the low voltage operation. Furthermore, the memory device of this invention does not require an intermediate voltage of 1 V, and hence, does not require a circuit for generating such voltage. Now, let us consider the ranges of the voltages supplied to the memory device of the Fig. 7 in the erase, read and write modes, by referring to Fig. 6. The voltage ranges are: 0 V to 20 V (high voltage system) for WL, 5 V to 20 V (low and high voltage systems) for WG, 0 V to 20 V (high voltage system) for CG, 0 V to 5 V (low voltage system) of RG, and and 0 V to 5 V (low voltage system) for RL. Only WG uses both high voltage system and low voltage systems. Thus, the periphery circuits for processing these signals are simple. In short, the peripheral circuits can be separated between the high voltage system and the low voltage system, simplifying the circuit arrangement. Fig. 8 schematically shows a circuit diagram of another embodiment of a semiconductor memory device according to this invention. In this memory device, P channel MOS transistor 36 is used as the load circuit of read line RL. Ground is connected to the gate electrode, so that transistor 36 is kept turned on. When conduction resistance of transistor 36 is Rr, the value of resistance Rr is selected so as to satisfy the relation (1). Fig. 9 shows yet another embodiment of a semiconductor memory device according to this invention. As in the case of Fig. 8, also in this instance, P channel MOS transistor 36 is used as the load circuit of read line RL. However, the gate electrode of transistor 36 is supplied with clock signal . Transistor 36 is turned on when clock signal  is at 0 V. Therefore, the active period of RL (i.e., a period that it is set at the Vcc level) is only during the period of  = 0 V, as shown in a timing chart of Fig. 10. With such an arrangement, the read current flowing from Vcc to WL through RL and the memory cell is only during the period of  = 0 V. Thus, the power dissipation is further reduced. Fig. 11 shows a circuit diagram showing an arrangement of a further embodiment of this invention. In this memory device, P channel MOS transistor 36 used as a load circuit of read line RL is coupled at the gate with clock signal . The voltage of RG is applied not directly to, but via AND gate 37, to the gate electrode of transistor 31, under control of clock signal . Fig. 12 shows a timing chart for explaining the operation of the memory device shown in Fig. 11. When  = 0 V, i.e., the precharge period is set, P channel MOS transistor 36 is turned on to precharge RL at Vcc. At this time, the output of AND gate 37 is at 0 V. Therefore, the first selecting transistor 31 supplied with an output of AND gate 37 is turned off, and thus, there is no current path routed from RL to the memory cell to WL. When  = 5 V, is the active period is set. During this period, P channel MOS transistor 36 is turned off. At this time, RG = 5 V, and the output of AND gate 37 is also 5 V. Thus, first selecting transistor 31 is turned on. Under this condition, if electrons have been injected to memory cell 32, RL is kept at 5 V. If electrons have been emitted, RL is discharged to be 0 V. As seen from the foregoing, there is no DC current path routed from Vcc via RL and the memory cell to WL. A further reduction of power dissipation can be realized. Fig. 13 shows a circuit diagram of a memory device in which a sense amplifier is formed of an inverter. The load circuit 38 of read line RL may be formed of resistor 34 in Fig. 7, P channel MOS transistor 36 in Fig. 8 set in an normally-conductive state, P channel MOS transistor 36 controlled by clock signal , or the like. In short, even when any load circuit is used between Vcc and RL, the voltage of RL fully swings between 0 V and 5 V. Thus, there is no need for a complicated sense amplifier for amplifying a minute potential difference. Therefore, an inverter can be used as sense amplifier 35, as shown in Fig. 13. The result is simplification of the sense amplifier and reduction of the access time. Fig.14 shows an equivalent circuit of a memory cell, which is a modification of this the memory cell shown in Fig. 4. In this memory cell according to this modification, the gate electrodes of first and second selecting transistors 31 and 33 are interconnected, the common gate electrode is connected to selecting gate line SG. In other words, this connection arrangement is substantially the same as that of the circuit of Fig. 5, except that the write gate line and the read gate line are interconnected and the interconnected line is used as selecting gate line SG. Therefore, this memory cell of Fig. 14 can be applied to the semiconductor devices shown in Fig. 7, 8, 9, 11, or 13. Fig. 15 shows a table denoting the voltages supplied to write line WL, selecting gate line SG, control gate line CG, and read line RL in the respective modes of the memory cell shown in Fig. 4. The voltages of supplied to selecting gate line SG are the same as those of write gate line WG in Fig. 6. Fig. 16 shows a cross sectional view of a memory cell according to a second modification of the memory cell shown in Fig. 4. In the Fig. 4 cell, N type diffusion layer 12 is formed between channel regions 15 and 18. In this modification, however, no layer corresponding to the N type diffusion layer 12 is formed. Rather, channel regions 15 and 18 are formed in a series form between N type diffusion layers 11 and 13. The equivalent circuit of the memory cell having such structure is the same as that of the memory cell shown in Fig. 5. Therefore, it is possible to construct the memory devices shown by the equivalent circuits in Figs. 7 to 9, and 11, by using the memory cell shown in Fig. 16. Further, the memory devices may be further modified as shown in Fig. 14. With such arrangements of the semiconductor memory device, a low operation voltage and a low power dissipation are realized. Further, the peripheral circuits including the sense amplifier are simplified in construction, and operable at a high speed.

Claims: A nonvolatile semiconductor memory device, comprising: a write line layer (WL); a read line layer (RL); a write gate line layer (WG, SG); a control gate line layer (CG); a read gate line layer (RG); a cell transistor (32) formed of a floating gate type MOS transistor, for storing an electric charge, whose control gate is connected to said control gate line layer; a first selecting transistor (31) formed of an MOS transistor, whose gate is connected to said read gate line layer (RG), one terminal of whose source-drain path is connected to said read line layer (RL), and the other terminal of the source-drain path is connected to one terminal of the source-drain path of said cell transistor (32); and a second selecting transistor (33) formed of an MOS transistor, whose gate is connected to said write gate line layer (WG, SG), one terminal of whose source-drain path is connected to said write line layer (WL), and the other terminal of the source-drain path is connected to the other terminal of the source-drain path of said cell transistor (32), in which said cell transistor (32) has a tunnelling region formed between its floating gate and said other terminal of its source-drain path, said write line layer (WL) supplies a first voltage in the data read mode to said other terminal of the source-drain path of said cell transistor (32) via the source-drain path of said second selecting transistor (33), the first voltage being applied, in said data read mode to the control gate line layer (CG) so that substantially 0 V appear across the tunnelling region, and said read line layer (RL) supplies, in said data read mode, a second voltage higher than said first voltage to said one terminal of the source-drain path of said cell transistor (32) via the source-drain path of said first selecting transistor (31). The memory device according to claim 1, characterized in that said write gate line layer (SG) and said read gate line layer (RG) are interconnected with each other to form a selecting gate line layer. The memory device according to claim 1, characterized in that said write line layer (WL) supplies to said one terminal of said source-drain path of said second selecting transistors (33) a third voltage higher than said first and second voltages in the data write mode, and said first voltage in the data erase and read modes, said write gate line layer (WG) supplies to said gate of said second selecting transistor (33) said third voltage in the data erase and write modes, and said second voltage in the read mode, said control gate line layer (CG) supplies to said control gate of said cell transistor (32) said third voltage in the data erase mode, and said first voltage in the data write and read modes, said read gate line layer (RG) supplies to said gate of said first selecting transistor (31) said first voltage in the data erase and write modes, and said second voltage in the data read mode, and said read line layer (RL) supplies said second voltage to said one terminal of said source-drain path of said first selecting transistor (31) in the data read mode. The memory device according to claim 2, characterized in that said write line layer (WL) supplies to said one terminal of said source-drain path of said second selecting transistor (33) a third voltage higher than said first and second voltages in the data write mode, and said first voltage in the data erase and read modes, said selecting gate line layer supplies to said gate of said first and second selecting transistors (31, 33) said third voltage in the data erase and write modes, and said second voltage in the read mode, said control gate line layer (CG) supplies to said control gate of said cell transistor (32) said third voltage in the data erase mode, and said first voltage in the data write and read modes, and said read line layer (RL) supplies said second voltage to said one terminal of said source-drain path of said first selecting transistor (31) in the data write and read modes, and said first voltage in the erase mode. The memory device according to claim 1, characterized in that said cell transistor (32) comprises a second and a third diffusion layer (12, 13) of a second conductivity type formed in a semiconductor substrate of a first conductivity type, a second channel region (18) formed between said second and third diffusion layers, a floating gate electrode (20) formed above said second channel region and extending above said third diffusion layer, a control gate electrode (23) formed above said floating gate electrode, a first insulating layer formed between said second channel region and said floating gate electrode, and a second insulating layer formed between said third diffusion layer and said extending portion of said floating gate electrode, the second insulating layer having a thickness thinner than that of said first insulating layer, said first selecting transistor (31) comprises a first and said second diffusion layer (11, 12) of said second conductivity type formed in said semiconductor substrate, a first channel region (15) formed between said first and second diffusion layers, a first gate electrode (17) formed above said first channel region, said second selecting transistor (33) comprises said third and a fourth diffusion layer (13, 14) of said second conductivity type formed in said semiconductor substrate, a third channel region (24) formed between said third and fourth diffusion layers, a second gate electrode (26) formed above said third channel region, said write line layer (WL) supplies to said fourth diffusion layer a third voltage higher than said first and second voltages in the data write mode, and said first voltage in the data erase and read modes, said write gate line layer (WG) supplies to said second gate electrode said third voltage in the data erase and write modes, and a second voltage in the read mode, said control gate line layer (CG) applies to said control gate electrode said third voltage in the data rease mode, and said first voltage in the data write and read modes, said read gate line layer (RG) supplies to said first gate electrode said first voltage in the data erase and write modes, and said second voltage in the data read mode, and said read line layer (RL) supplies said second voltage to said first diffusion layer in the data read mode. The memory device according to claim 1, characterized in that said cell transistor (32) comprises a first and a second diffusion layer (11, 13) of a second conductivity type formed in a semiconductor substrate (10) of a first conductivity type, a second channel region (18) formed between said first and second diffusion layers, a floating gate electrode (20) formed above said second channel region and extending above said second diffusion layer, a control gate electrode (23) formed above said floating gate electrode, a first insulating layer formed between said second channel region and said floating gate electrode, and a second insulating layer formed between said second diffusion layer and said extending portion of said floating gate electrode, the second insulating layer having a thickness thinner than that of said first insulating layer, said first selecting transistor (31) comprises said first and said second diffusion layer (11, 13), a first channel region (15) formed between said first and second diffusion layers, a first gate electrode (17) formed above said first channel region, said second selecting transistor (33) comprises said second and a third diffusion layer (13, 14) of said second conductivity type formed in said semiconductor substrate, a third channel region (24) formed between said second and third diffusion layers, a second gate electrode (26) formed above said third channel region, said write line layer (WL) supplies to said third diffusion layer a third voltage higher than said first and second voltages in the data write mode, and said first voltage in the data erase and read modes, said write gate line layer (WG) supplies to said second gate electrode said third voltage in the data erase and write modes, and a second voltage in the read mode, said control gate line layer (CG) applies to said control gate electrode said third voltage in the data erase mode, and said first voltage in the data write and read modes, said read gate line layer (RG) supplies to said first gate electrode said first voltage in the data erase and write modes, and said second voltage in the data read mode, and said read line layer (RL) supplies said second voltage to said first diffusion layer in the data read mode. The memory device according to anyone of claims 1, 2, 5 or 6, characterized in that said read line layer (RL) is connected to a power source (Vcc) via a load circuit (38), and a signal on the read line layer (RL) is supplied to a sense amplifier circuit (35). The memory device according to claim 7, characterized in that said load circuit (38) comprises a MOS transistor (36) which is normally turned on. The memory device according to claim 7, characterized in that said load circuit (38) comprises a MOS transistor (36) which is turned on by a clock signal. The memory device according to claim 9, characterized in that the voltage of said read gate line layer (RG) is supplied to said gate of said first selecting transistor (31) in synchronism with said clock signal. The memory device according to claims 2, 7 and 9, characterized in that the voltage of said selecting gate line layer (RG) is supplied to said gates of said first and second selecting transistors (31, 33) in synchronism with said clock signal. The memory device according to claim 7 or 11, characterized in that said sense amplifier circuit (35) is an inverter circuit. The memory device according to claim 5 or 6, characterized in that said write gate line layer (WC) and said read gate line layer (RG) are interconnected with each other.

Inventors: MARUYAMA, TADASHI C/O PATENT DIVISION, SHIGEMATSU, TOMOHISA C/O PATENT DIVISION, SUZUKI, YASOJI C/O PATENT DIVISION, WADA, YUKIO C/O PATENT DIVISION, YOSHIZAWA, MAKOTO
Applicants: KABUSHIKI KAISHA TOSHIBA, TOSHIBA MICRO-COMPUTER ENGINEERING CORPORATION
Application year: 1988
Main classification: G11C16
IPC codes: H01L27, G11C17, G11C16