PHOTOCATALYTIC TREATMENT OF WATER FOR THE PREPARATION OF EXTRAPURE WATER

Abstract: A new process for purifying water from organic im­ purities included in total organic carbon (TOC) to be incor­ porated into a series of purification steps for the purpose of preparing extrapure or ultrapure water so-called, which pro­ cess comprises irradiating the water to be treated with a light in the presence of a photocatalyst comprising an inorganic semiconductor in fine particulate form and a metal of Group VIII of the Periodic Table and/or an oxide thereof deposited on said semiconductor particles for a period of time sufficient to oxidatively decompose the organic impurities, resulting in a decrease in TOC content of the water to a level lower than the minimum detection level of detectors used, typically <0.05 mgC/ℓ.

Description: This invention relates to a new process step to be incorporated in a variety of water purification processes, particularly for the purpose of the preparation of so-called ultrapure or extrapure water, hereinafter referred to as extrapure water. More particularly, this invention is directed to a step for purifying water to be included in a series of water treatment steps for the preparation of extrapure water, which relates to a catalytic photolysis of organic impurities contained in water to be purified whereby removing the total organic carbon, hereinafter referred to as "TOC", contents therefrom. Recently, demand for water of high purity in industrial applications has been markedly expanding in both the quantity and quality thereof. In particular, production of integrated circuits requires water of extraordinarily high purity, typically for washing semiconductor wafers. Such water of extra high purity is termed extrapure water which consists only of water with little or no other substances or contaminants. Another important application of extrapure water is found in the pharmaceutical industry as a charge for preparation and as wash water for final washing steps, for example. Various processes have hitherto been proposed and practically used for the preparation of extrapure water. Typical processes include reverse osmosis, adsorption on activated carbon, adsorption on ion exchange resin, ultrafiltration and "U V oxidation" so-called, which are adopted separately or usually in any combination thereof and which are in any case combined with one or more previous treatment steps to be appropriately selected dependent upon the nature of raw water to be treated, the nature of contaminants in the raw water and the amount of the contaminants and others. Thus, the preparation of extrapure water has always relied on a multi-step process for purification of water. One of most typical processes established and practised in the prior art for the preparation of extra-pure water from a raw water such as city water, well water and industrial water comprises the steps of prefiltration of the raw water through a filter press for the removal of solid particulate contaminants having particle sizes of about 5-10 µm and larger; reverse osmosis for the removal of at least 99% of solid particulate contaminants and of at least about 90% of ions and organic contaminants included in TOC contents; sterilization with UV radiation for destroying microorganisms contained in the water; ion exchange treatment for the removal of ionic contaminants to a level being substantially complete; and ultrafiltration for the removal of residual trace contaminants to yield an extrapure water desired. In such a multi-step process, it is of course customary in the art to make some change of the sequence of steps or replacement, addition or other modification of steps, depending upon the nature and quality of raw water to be treated and upon the quality of extrapure water desired. For example, a "UV oxidation" step, if desired to be incorporated into the above-mentioned typical multi-step process, will usually and advantageously be inserted after the prefiltration step. According to the processes already proposed for the preparation of extrapure water, ionic impurities can be removed to a level lower than the minimum detection level of the measuring instrument used, but complete removal of TOC is difficult and still impossible, with possibility of further improvements. The typical prior art processes for the purification of water may be evaluated from such particular point of view as the removal of very small residual amounts of organic impurities, i.e. as the significant decrease in TOC content which is being required making further improvement as above-mentioned, as summarized below. Generally speaking, processes relying on either membrane-filtration or adsorption technique intend to remove simultaneously both the impurities included in TOC and those not included in TOC. Since, however, the higher the value of TOC in the water to be treated, the higher the load added to the apparatus to be used for the purification of water, there will occur, in the membrane-filtration processes, lowering of the output of purified water due to clogging of membrane and also lowering of the efficiency of the removal of impurities due to deterioration of membrane and, in the adsorption processes, saturated adsorption leading to leakage of impurities because of difficulty in control of amount of saturation adsorption. In the membrane-filtration processes, the removal of organic impurities is usually effected by reverse osmosis where the organic impurities are removed together with ions and fine particulate materials after some previous treatments appropriately selected are taken, but the removal efficiency achievable thereby is within the range of 30-80% at the maximum depending upon the concentration of such impurities in the water to be treated. On the other hand, the ultrafiltration processes are solely directed, as known, to the removal of organic impurities of high molecular weights, thus having been used mainly for the purpose of removal of fine particulate materials rather than the removal of TOC contents. As is well-known, organic impurities of low molecular weights contained in water can almost never be removed by ultrafiltration. Adsorption processes such as those with ion exchange resins and those with activated carbon have such a low level of capability of TOC-removal as 50% at most depending upon the concentration of TOC in water to be treated. They also have such disadvantages that their applications are limited because it is impossible for ion exchange resin adsorption to remove any organic impurities with no electric charge, it is impossible for activated carbon adsorption to adsorb any organic impurities of low molecular weight and with a further possibility that ionic impurities are eluted, and that the control of adsorption saturation is difficult for all the processes in question. "UV oxidation" so-called which has recently been developed mainly for the purpose of reclamation of waste wash water used for washing in various steps for the production of integrated circuits summarily comprises irradiating with UV light such waste wash water to be reclaimed to which hydrogen peroxide has been added, thereby causing oxidative decomposition of mainly TOC contents such as methanol, isopropyl alcohol, acetic acid, surfactants, photoresist, etc. However, UV oxidation is still not satisfactory in that a relatively long time is required, for example 2-4 hours when UV light is irradiated at an intensity of 2-10 KW/m³ of the water to be treated, and the capability of decomposition by this method is limited to about 1/2 - 1/5 of the initial TOC content at the maximum. Under the state of the prior art as above-mentioned and in view of economy of resources and of prevention of environmental pollution, further development and improvement in the preparation of extrapure water with higher efficiency and with higher quality is eagerly desired in order to solve the problems involved in the recovery and reclamation of water used more effectively and to cope with the increase in demand of extrapure water of higher purity. We have proceeded with our investigations on the preparation of extrapure water, taking aim at lowering TOC content of water to be treated, that is at removing impurities participating in TOC content, and with the intention of making use of photocatalytic action of inorganic semiconductors in fine particulate form for this purpose. As a result, we have now found that light irradiation of water to be purified from organic impurities in the presence of a photocatalyst comprising Pt deposited on TiO₂ or CdS as an inorganic semiconductor in fine particulate form leads to substantially complete oxidative decomposition of the organic impurities into carbon dioxide and water or at least other harmless or easily removable substances and therefore a new process can be derived therefrom for the production of extrapure water which is significantly more efficient and capable of giving a higher purity than those in the prior art processes by combining the above-said photocatalytic treatment step with any desired process known and established in the prior art for the purpose of producing extrapure water. According to this invention, therefore, there is provided a process for the preparation of extrapure water from any source of water by a series of purification steps capable of selecting and combining to effect substantial removal of overall impurities therefrom, characterized in that a step is incorporated therein for removal of organic impurities taking part in the total organic carbon (TOC) content from the water being under purification, which comprises irradiating the water to be treated with a light in the presence of a catalytic amount of a photocatalyst comprising TiO₂ or CdS as an inorganic semiconductor in fine particulate form and Pt deposited on said semicondutor particles for a period of time sufficient to oxidatively decompose the organic impurities. The photocatalytic action of inorganic semiconductors in fine particulate form is already known per se. Thus, if an inorganic semiconductor in fine particulate form is irradiated with a light having an energic power higher than the energy gap between the valence band and the conduction band of the said semiconductor, there occurs transfer of electrons from the valence band to the conduction band, thus forming positive holes in the valence band. The electrons and positive holes are diffused within and through each of said semiconductor particles and arrive at the surface thereof, thus capable of exhibiting their oxidative decomposition activity on the organic impurities in water when said semiconductor particles are present in said water. The deposition of Pt onto the said semiconductor particles has been found to enhance further and greatly the catalytic activity of said semiconductor particles in question. There have been various studies already made on the utilization of photocatalysts, among which those directed to the production of hydrogen from water are viewed with keen interest in the development of a new energy source. Some reports have also been presented on treatment of organic impurities contained in waste water to be purified with a view to preventing environmental pollution by relying on a strong oxidative action of photocatalysts. However, so far as we can know, no proposal has yet been made on the application of photocatalysts to the complete removal of trace amount of organic impurities contained in water to be treated for the purpose of producing extrapure water. It was quite unexpected even for us that the application of such photocatalyst to the preparation of extrapure water could result in substantial decrease in residual trace content of organic impurities in water to be treated to a level lower than the minimum detection level of the measuring instrument used. The single drawing attached is a graph including two curves for making comparison in effect on the removal of residual trace amount of impurities from water in terms of TOC content of the water treated, between the photocatalytic process according to this invention (curve A) and the UV oxidation process according to the recent prior art (curve B). This invention is widely applicable for the purpose of removing organic impurities contained in water which may be at any suitable stage of any multi-step process for the preparation of extrapure water from any source of water. Typical examples of water containing organic impurities, to which this invention is applicable, include city water, industrial water, well water, washings from various industrial processes, any of those partially purified and even pure water. Among washings derived from industrial processes, those derived from the process steps for the preparation of integrated circuits and related products are most advantageously treated according to this invention for reuse thereof by recycling. As semiconductor materials in fine particulate form to be used as the first component of the photocatalyst according to this invention, there are used, TiO₂, most preferably in anatase form, and CdS. They are particularly suitable for the purpose of oxidative decomposition in view of the energy gap of valence band and conduction band and of the position in respect of standard hydrogen electrode potential. The particle diameter of the fine particulate inorganic semiconductor to be used according to this invention is generally about 30mµ to 10mµ and preferably about 100mµ - 10mµ. The amount of Pt deposited on the semiconductor particles may vary dependent upon the nature of said semiconductor material used, the purpose of the use of said photocatalyst and other factors, but is generally about 0.01 to 20% by weight, more usually about 0.1 to 15% by weight based on the weight of the semiconductor used. The amount of the photocatalyst may also vary depending upon various factors similar to those given with respect to the amount of the Pt above-mentioned, but is generally about 0.005 g to 5 g per litre of water to be treated and more usually about 0.1 to 1 g on the same basis. It is to be understood that the choice of particular photocatalyst, i.e particular combination of the inorganic semiconductor [TiO₂ oR CdS] in fine particulate form with Pt composition and amount thereof to be used for particular application of this invention may be easily made by those of ordinary skill in the art, depending upon particular water to be treated and the quality required for the extrapure water intended, on the basis of the teachings of this invention, if necessary by simple experiment. The deposition of Pt as the second component of the photocatalyst on the inorganic semiconductor component may be effected by any known method properly chosen according to the nature of the semiconductor, such as kneading and photoelectrodeposition (i.e. photoplating), the latter being preferred because high bonding can be given between the active metal and the said semiconductor component. The process according to this invention can be carried out at any appropriate stage of a series of steps involved in the preparation of extrapure water, which mainly depends on the nature of raw water to be treated for said purpose and thus on the nature and amount of impurities contained therein. Thus, in cases where the raw water to be treated is city water, industrial water or well water, it is preferred to apply the process of this invention to a partially purified water by reverse osmosis or by ion exchange depending upon the quality of said water, for example. In cases where the raw water to be treated is washings withdrawn from washing steps of the processes for the production of integrated circuits, the process of this invention may typically be applied after steps of activated carbon- and/or ion exchange-treatments. According to one of the most preferred embodiments of this invention, the overall process for the preparation of extrapure water from a raw water may comprise the steps of prefiltration of the raw water through a filter press for the removal of solid particulate contaminants having particle sizes of about 5-10 µm and larger; reverse osmosis for the removal of at least 99% of solid particulate contaminants and of at least about 90% of ions and organic contaminants taking part in TOC contents; photocatalytic treatment which is the new, characteristic method of this invention for the removal of residual trace amount of organic contaminants by oxidative decomposition thereof and for destroying microorganism contaminants; ion exchange treatment for the removal of ionic contaminants to a level being substantially complete; and ultrafiltration for the removal of residual trace contaminants to yield an extrapure water desired. Of course, the above-mentioned are mere embodiments of this invention, to which it is in no way limited. In practising the process of this invention, the photocatalyst to be used in particular applications may be chosen depending mainly upon the nature and amount of organic contaminants to be decomposed and removed. Thus, TiO₂ as the semiconductor component exhibits a very strong oxidative action as being capable of effecting oxidative decomposition of most of organic contaminants though it has not a so wide wavelength range of light available. The combination of Pt with TiO₂ has been found to enhance much more the catalytic activity. The combination of CdS/Pt has a much wider wavelength range of light available than that of TiO₂/Pt and is therefore advantageous in energic point of view though the oxidative power is lower than that of TiO₂/Pt. Generally, in order to effect the intended oxidative decomposition of organic impurities contained in water by photocatalytic reaction according to this invention, a suitable photocatalyst is first selected for each particular case, on which is then chosen an appropriate wavelength range of light to be used. Particle size of the inorganic semiconductor may suitably be selected, mainly in view of easy handling, to be a level of 30 mµ to 100 µ, particularly a level of 100 mµ to 10 µ. The metal i.e Pt to be deposited on the inorganic semiconductor particles is chosen primarily dependent upon the activity level and the bonding strength thereof with the semiconductor. Amount of Pt to be deposited on the semiconductor may also depend upon the nature thereof, the nature of semiconductor on which they are deposited, the method for deposition, activity level of the catalyst required and other factors in each particular case. In any event, the determination of the composition of particular photocatalyst to be suitably used may easily be made by those skilled in the art, if necessary, by routine experimental work. Typically, for the use of TiO₂ as semiconductor, the level of 1.0 to 10% by weight of Pt will be suitably deposited thereon. Now, the effect brought about by applying the process of this invention is illustrated in comparison with the so-called "UV oxidation" process as the most typical related prior art on the treatment of washings discharged in various processes for the production of integrated circuits. Organic contaminants in such washings are mainly composed of methanol, isopropyl alcohol and acetic acid. According to the UV oxidation process, such organic impurities can be removed by oxidative decomposition, in most cases, only in the level of about 1/5 to 1/2 of the initial content thereof at the maximum. In contrast therewith and quite unexpectedly, the process according to this invention can lead to substantially complete removal by oxidative decomposition of such organic impurities; that is the TOC content of the water thus treated can be lowered to such level as being incapable of being determined by any detector usually used, i.e. to a level lower than the minimum detection level of the detector (<0.05 mg C/ℓ). Comparison of said oxidative decomposition capability between this invention where TiO₂/Pt is used as photocatalyst and the UV oxidation process has shown that at the same level of photo-energy applied to cause the oxidative decomposition reaction intended, the former process results in TOC content undetected in the water thus treated, i.e. lower than the minimum detection level of the detector used (<0.05 mg C/ℓ), at which time the latter process only attains the decrease in TOC content to a half of the initial content. The following is one concrete test we made for such comparison. Water to be treated for this purpose was made up to have TOC content of 13.77 mg C/ℓ by dissolving 10 mg/ℓ each of methanol, isopropanol and acetic acid in an extrapure water (TOC content: 0.07 mg C/ℓ) already prepared. The water was treated in two different ways, i.e. by the photocatalytic process according to this invention and by the UV oxidation process of the recent prior art. In the photocatalytic process, TiO₂/Pt (0.5 g) was used as photocatalyst which was prepared by depositing 1% by weight of Pt by photoelectrodeposition on TiO₂ in anatase structure having a particle size range of 0.1 to 10µ (a commercial product), whereas in the UV oxidation process hydrogen peroxide was added to the water to be treated in an amount of 1.2 times as much as the initial total oxygen demand (TOD) of the water. In both the processes, then UV irradiation was effected by using a 500 W high pressure mercury lamp for 2 hours, during which TOC content of the water being treated was periodically determined every 30 minutes by TOC analyzer, Dohrman DC-80 type, the results of which are shown as curves A and B for the present process and the UV oxidation process, respectively, in the drawing attached. The results of these comparative tests are believed to reveal such remarkable superiority in effect of the process of this invention to the known UV oxidation process as explained above. Thus, it is to be noted that the effect or capability of the TOC removal by oxidative decomposition of organic contaminant materials taking part in the TOC content of impure water, which is brought about by the use of the specific photocatalysts in the process of this invention is quite unexpected and surprising from the level of the related art. More concretely, the water obtainable from a series of water-purification steps including the process of this invention as an essential step for removing organic impurities taking part in the TOC content of the water by the photocatalytic oxidative decomposition can be used as extrapure water as it is, whereas the water obtainable from a series of water-purification steps as similar as above except that the process of this invention is omitted and instead the UV oxidation process in question is adopted for the removal of organic impurities taking part in the TOC content of the water cannot be used as it is as extrapure water because the water recovered from the latter overall process still shows TOC content as high as, or in some cases rather higher than, those of city water and industrial water. A further advantage of the utilization of the process of this invention in place of the UV oxidation process is in that no additional step is required for the photocatalytic process as in the latter process which is to be followed by a further step to treat any residual oxidizing agent unreacted such as hydrogen peroxide added to the water to be treated in said preceding step. Thus, for example, the process of this invention is advantageously applicable to the recovery of washings discharged from various steps for the preparation of integrated circuits whereby organic contaminants included in the TOC content in the washings can be removed nearly completely. The process according to this invention is also applicable to the treatment of various types of impure water including city water, industrial water, well water and those derived therefrom by complete or partial purification relying on prior art techniques, particularly those to be used as raw water for the preparation of extrapure water which is to be directed for use as wash water for various steps for the production of integrated circuits and as a charge for the preparation of medicines and as wash water for final washing steps thereof. According to this invention, it is also possible to secure satisfactory removal by decomposition of trace amounts of organic impurities contained in water which are injurious to human health, particularly required for extrapure water used for medicinal purposes. A further advantage of the process of this invention over the level of the prior art is that in most of water-purification processes currently used for the purpose of producing extrapure water, there is a tendency to bring on the apparatus used an undesirable load attributable to organic impurities contained in water to be treated and whereby to result in a breakdown or other fault of the apparatus, to which in contrast the process of this invention has no such tendency of loading at all. The following Examples further illustrate, but in no way limit, this invention. Example 1 A standard sample of water to be treated was prepared by dissolving a proportion of 10 mg/ℓ each of methanol, isopropanol and acetic acid in an extrapure water (with TOC content of 0.07 mg C/ℓ) already prepared to give the TOC content of 13.77 mg C/ℓ of the water sample with the intention of simulating the TOC content and the composition of main impurities taking part in TOC of typical washings discharged from various steps for the production of integrated circuits. The photocatalyst used was of anatase TiO₂/Pt type which was prepared by depositing 1% by weight, based on the weight of TiO₂, of Pt on fine particles of TiO₂ of anatase type (a commercial product; particle size: 0.1 - 10µ) by photoelectrodeposition. A 200 ml portion of the water sample prepared as above was taken in a 500 ml egg plant type flask and 0.5 g of the photocatalyst (TiO₂/Pt) prepared as above was added thereto. The contents were irradiated with UV light emitted from a 500 W high pressure mercury lamp for 2 hours under stirring. After the photocatalytic treatment, the TOC content of the water thus treated was determined by TOC analyzer, Dohrman DC-80 type, and found to be <0.05 mg C/ℓ, that is below the limit of determination minimum of this analyzer. Comparative Example 1 By way of comparison, the procedure of Example 1 was repeated except that 0.5 g TiO₂ of anatase type as such without Pt deposited was used as the photocatalyst. The TOC content of the water thus treated was 0.6 mg C/ℓ. Comparative Example 2 This Example is for the purpose of comparison showing the result of UV oxidation process. The procedure of Example 1 was repeated except that no photocatalyst was used and instead hydrogen peroxide was added to the water to be treated in an amount of 1.2 times of the TOD of the water. The TOC content of the water thus treated was 6.3 mg C/ℓ. Example 2 The procedure of Example 1 was repeated except that the photocatalyst used was TiO₂/Pt (amount of Pt deposited: 10% by weight based on the weight of TiO₂) which was prepared by kneading. The result thus obtained was the same as that in Example 1. This Example was made for the purpose of studying the influence of the difference in method of preparing the photocatalyst on the catalytic activity. Thus, the comparison between Examples 1 and 2 clearly showed that the use of photoelectrodeposition (Example 1) gave markedly superior bonding strength of Pt on TiO₂ in the resulting catalyst to that of the catalyst prepared by kneading (Example 2) and therefore that the former could considerably lower the amount of Pt required in compared with the latter to attain the same, desired level of catalytic activity. Example 3 The procedure of Example 2 was repeated except that the light source used was a 500 W xenon (Xe) lamp with the result same as that in Example 2, that is giving TOC content of the water thus treated of <0.05 mg C/ℓ. Example 4 The procedure of Example 3 was repeated except that TiO₂ was replaced by inorganic semiconductor CdS as shown below in Table 2 in which is also shown the composition of the photocatalyst used and the TOC content of the water recovered in the Example. Photocatalyst Example No. Inorganic semiconductor (g) Metal deposited (% by weight) TOC content of the water recovered (mg C/ℓ) 4 CdS (0.5) Pt (10) <0.05 Example 5 The procedure of Example 1 was repeated except that the water used for the treatment was actual washings (the TOC content: 25 mg C/ℓ) derived from an industrial process for the preparation of integrated circuits. The TOC content of the water thus purified was <0.05 mg C/ℓ. This Example appeared to be of value at least equal to that found in Example 1. Example 6 The procedure of Example 1 was repeated except that the water used for the treatment was a city water (the TOC content: 1.0 mg C/ℓ). The TOC content of the water thus treated was 0.08 mg C/ℓ. Example 7 The procedure of Example 1 was repeated except that the water to be treated here was one containing a living microorganism, Pseudomonas diminuta , in a concentration of about 10⁶ cells per ml together with a liquid culture medium therefor in an amount giving about tens of thousands mg C/ℓ calculated in terms of TOC. The water used was prepared by providing a saline-lactose-broth medium consisting of a commercially available lactose-broth medium (0.4 g), sodium chloride (7.6 g), an extrapure water having TOC content of 0.07 mg C/ℓ (1,000 ml) and an amount of sodium hydroxide sufficient to adjust the pH of the resulting medium to 6.9 ± 0.1, inoculating the said medium with Pseudomonas diminuta (a commercially available microorganism) and incubating the medium thus inoculated at 30°C for 24 hours whereby giving the concentration of cells of said microorganism and the TOC content as shown above in the water. After the treatment, a portion of the water thus treated was filtered and the filtrate was dyed with a microorganism-staining dye in a usual manner and a specimen prepared therefrom was observed on a light microscope by direct method with the result that no intact cells of microorganisms were found at all. Also found in determination of TOC content was that the water thus treated showed a very low value of TOC content, about 100 µg C/ℓ. The results of all the Examples and Comparative Examples given above clearly demonstrate that the photocatalyst to be used in the process of this invention exhibits much higher activity on oxidative decomposition of organic contaminant substances in water as compared with, and quite unexpected from, the UV oxidation process of the prior art. In general, TOC analyzers currently used in the art set up the limits of determination as reliable values for respective instruments, under which the TOC contents of water purified by the process of this invention, i.e. extrapure water, are in fact lower than the limit of determination minimum of such analyzers, that is usually lower than 0.05 mg C/ℓ which is lower than the TOC content (0.07 mg C/ℓ) of the extrapure water which was used in Example 1 to prepare the standard sample of water to be treated therein, and are possibly as low as about 0.01 mg C/ℓ or less in practice. It is also possible according to this invention to utilize the overall breadth of the wavelengths available from light sources to be used by appropriate selection and combination of two or more inorganic semiconductors different in available wavelength. It is therefore expected that the process according to this invention is much more advantageous for practical uses than the UV oxidation process not only in the decomposition power but also in energy efficiency.

Claims: A process for the preparation of extrapure water from any source of water by a series of purification steps capable of effecting substantial removal of overall impurities therefrom, characterised in that a photocatalytic step is incorporated therein for removal of organic impurities included in the total organic carbon (TOC) content of the water being purified which comprises irradiating the water to be treated with a light in the presence of a catalytic amount of a photocatalyst comprising TiO₂ or CdS as an inorganic semiconductor in fine particulate form and Pt deposited on said semiconductor particles for a period of time sufficient to oxidatively decompose the organic impurities. A process according to claim 1 wherein the inorganic semiconductor is in fine particulate form of about 30µ to 100mµ in particle diameter. A process according to claim 2 wherein the particle diameter of the inorganic semiconductor is about 100mµ to 10µ. A process according to any one of the preceding claims wherein the amount of Pt deposited is 0.01 to 20% by weight, more particularly 0.1 to 15% by weight, based on the weight of the semiconductor particles used. A process according to any one of the preceding claims wherein the photocatalyst is used in an amount of 0.005 g to 5 g liter of water to be treated. A process according to claim 1 wherein the photocatalytic step is incorporated in a series of purification steps to be adopted at any appropriate point thereof depending upon the nature of raw water to be treated and the nature and amount of impurities contained therein. A process according to claim 1 wherein the photocatalytic step is incorporated to make up an overall process to be applied for the purification of raw water selected from city water, well water, industrial water and washings derived from industrial processes, which comprises the steps of prefiltration of the raw water through a filter press for the removal of solid particulate contaminants having particle sizes of about 5-10µm and larger; reverse osmosis for the removal of at least 99% of solid particulate contaminants and of at least about 90% of ions and organic contaminants included in TOC contents; photocatalytic treatment for the removal of a residualtrace amount of organic contaminants by oxidative decomposition thereof and for destroying microorganism contaminants; ion exchange treatment for the removal of ionic contaminants to a level being substantially complete; and ultrafiltration for the removal of residual trace contaminants to yield extrapure water.

Inventors: KAWAI, TOMOJI, OHTA, YOSHIHARU, SATOH, HISAO
Applicants: NOMURA MICRO SCIENCE CO., LTD.
Application year: 1987
Main classification: C02F1
IPC codes: C02F1