CONTROLLING RESISTIVITY OF PLATED METAL

Abstract: Method of controlling the residual resistivity of an electrolessly deposited metal by first, determining the mathematical relationship between the residual resistivity of the deposited metal and its rate of deposition and second, depositing said metal at a rate to produce a predetermined residual resistivity.

Description: This invention relates to a method of depositing a metal on a substrate in a plating bath and to an electric component comprising a substrate with a conductor of plated metal. Electrical resistivity of plated metals is of foremost significance and concern in circuit fabrication, such as in the construction of printed and integrated circuits. Achievement of the lowest possible electrical resistance in the conductive current paths with accom­ panying circuit integrity are among the more important and continuing goals. These characteristics can be obtained only through close monitoring and control during the metal deposition processes. Successful, uniform plating capability has developed into a highly skilled art. The resistivity of metals is influenced by many factors, including material lattice structure, impurity content and temperature. In circuit fabrication by additive plating processes, copper is one of the primary metals used because of its relatively low resistivity and favorable ductility. In additive processes, the metal is selectively deposited on a substrate by immersion in a plating bath that may be either an autocatalytic electroless bath, or an electroplating bath. The autocatalytic bath process is slow with copper, for instance, being deposited at the rate of 0.002 millimeters per hour. The bath formulation and plating process are critical to plating performance and are carefully controlled to insure and maintain bath stability, plating uniformity, and desired electrical and mechanical characteristics of the metal. Electrical resistivity, a measure of the metal's ability to conduct an electric current, can be separated into two components. One is the ideal temperature-dependent resistivity due to lattice vibrations, and the other is the residual resistivity due to impurities and lattice imperfections. At any given temperature, the ideal temperature-dependent resistivity is constant but the total resistance can vary among specimens of the same metal depending upon the magnitude of the residual resistance. It then becomes apparent that total resistivity can be changed only by altering the residual resistivity component. This residual resistivity can be decreased in smelted metals by further refinement to improve the purity. Plated metals are not amenable to this processing and their residual resistivities have not been generally considered a controllable property. It is the object of this invention to provide a method of depositing a metal on a substrate in a plating bath, such that the residual resistivity of the metal, that is, the resistivity due to impurities and lattice imperfections, is controllable while the metal is being deposited on the substrate. It is another object of this invention to provide an electric component with a conductor of plated metal allowing a multiple application. The foregoing objects are attained by the invention as characterized in the claims 1 and 9. According to the invention, the deposition method where the residual resistivity is controllable during deposition consists in determining the relationship between the value of residual resistivity as a physical property of a deposited metal and the rate at which the metal was deposited, and thereafter plating the metal onto a workpiece at a rate that will produce the desired resistivity value for the metal. This method of choosing the residual resistivity of a plated metal can be used to enable creation of a resistance profile of the metal that differs across its thickness by altering the plating rate during deposition. Metal purity and the number of imperfections in the lattice structure change as a result of the deposition rate change and the residual resistivity can be selected for a plated layer. The quality of the deposited layer can therefrom be specified or predicted. Other properties apparently are not adversely affected by the plating rate changes. The invention further permits improved plating efficiencies through shortened processing times. The method allows to define particular desired values of residual resistivity for a plated metal and to achieve those values during the plating process. A further advantage of this invention is to provide an improved method of plating metal having a higher purity than heretofore is possible. The description of an embodiment of the invention refers to the accompanying drawings, wherein: FIGS. 1 and 2 are graphs of plating rates versus ratios of the resistances measured for plated copper samples, with each ratio calculated from the resistances measured at two different temperatures, and illustrate the effect of rate changes on residual resistivity. Additive construction of circuit conductors is frequently accomplished by immersion of a selectively sensitized substrate in an autocatalytic or electroless plating bath. For copper, the bath will typically contain constituents such as a metal source like copper sulfate, a pH adjuster such as sodium hydroxide, a ductility promoter such as sodium cyanide, a reducing agent such as formaldehyde, a commercial wetting agent and a complexing agent such as ethylenediamine tetra acetic acid, all held in a specific temperature range such as of 60 to 80° C. Copper atoms will deposit from the solution onto the previously prepared substrate surfaces. The deposition rate is slow and immersion must be continued for several hours to build the necessary metal thicknesses. Proportionalities of bath constituents change with use and, even with replenishment, the bath stability, rate and quality of the metal deposition are not constant. The quality of metal plated from autocatalytic baths has long been thought to trap the fewest impurities and provide the maximum conductivity when the plating rate was moderate permitting the bath to be maintained at its most stable condition, that is, not to suddenly plate out onto all surfaces in an uncontrolled manner. It has been discovered, however, that both the purity and molecular structure of the deposited metal are improved at faster plating rates. Whereas 0.002 millimeters of plated copper per hour is a typical and established plating rate for copper baths, it has been found that bath metal purity and molecular lattice structure, both affecting residual resistivity, are benefited by faster deposition at up to twice the normal rates, such as 0.003 to 0.004 mm/hr. An inverse relationship apparently exists between the plating rate and residual resistivity; as the deposition rate increases, the residual resistivity decreases. The specific relationship can differ, however, from bath to bath. Resistivity ρ of the metal can be separated into two components as follows: ρ = ρ T + ρ₀ (1) Where ρ T is the ideal temperature-dependent resistivity due to the lattice vibrations and ρ₀ is the residual resistivity due to impurities and lattice imperfections. At a given temperature, ρ T is constant but the total resistivity can vary depending on the magnitude of ρ₀. The characteristic residual resistivity relationship of a particular plating bath can be determined by applying the so-called "RHO" tests to samples plated under the same conditions but at different rates. RHO testing is accomplished by measuring the D.C. resistance R of a sample of plated metal at two different temperatures T1 and T2 and ratioing the results as: Where T1 and T2 are usually the temperatures of ice water (273°K) and liquid nitrogen (80°K), respectively. The residual resistivity ρ₀ can be solved for by rearranging equation (2): It has been determined that the value of the residual resistivity ρ₀ for autocatalytic copper plating baths decreases with increasing plating rates. This results in the value of RHO increasing in magnitude with a faster plating rate. Such a result is opposite to an intuitive expectation because the typical assumption is that higher rates of electroless metal deposition will trap or entrain more impurities and thereby increase residual, hence, total resistance. This unusual result can be illustrated by examples: Example 1 An autocatalytic copper plating bath was initially maintained in the following manner: the constituent concentrations affecting plating rate were formaldehyde at 2.2 to 3.0 milliliters per liter, copper at 8.8 to 9.4 grams per liter, and cyanide at 9.0 to 13.5 milliliters per liter. RHO monitors of epoxy-glass fiber substrates, each with a circuit path sensitized by immersion in stannous chloride and palladium chloride solutions, were immersed in the bath for 12-hour periods. This bath produced plating rates between 0.00198 and 0.00200 mm/hr. of copper plating. Resistance was then measured using a four-point probe system and RHO values of 6.62 to 6.67 were exhibited. Thereafter, the constituent concentration necessary for higher plating rates were provided and maintained with formaldehyde at 2.4 to 3.4 ml/l, copper at 9.6 to 10.0 g/l, and cyanide at 11.0 to 18.5 mg/l. These constituent changes produced copper deposition rates of 0.0029 to 0.0032 mm/hr. and RHO values of 6.78 to 6.88. The RHO values versus plating rate are shown in FIG. 1 in the two groups resulting from plating rate differences. Example 2 A second autocatalytic copper plating bath was varied as to constituent concentrations to effect plating rates as follows: formaldehyde concentration was maintained at 2.6 to 4.1 ml/l, copper at 6.0 to 8.5 g/l and cyanide at 7.0 to 14.6 mg/l. Again, substrates of epoxy-glass fibers with sensitized circuit paths were immersed for 12-hour periods. The second bath produced plating rates of 0.0021 to 0.0022 mm/hr. RHO values using the four-point probe system mentioned above were found to be 6.53 to 6.60. The concentrations were then changed to promote faster plating and formaldehyde was maintained between 3.4 and 4.4 ml/l, copper at 6.0 to 8.7 g/l and cyanide at 9.3 to 18.6 mg/l. The plating rates increased and were from 0.0026 to 0.0028 mm/hr. RHO values at this higher rate ranged from 6.75 to 7.00. The RHO values versus plating rates for the second bath are shown in FIG. 2. Plated copper deposited in the foregoing examples had a constant bright, shiny appearance irrespective of the deposition rates. There were no changes in ductility or substrate adhesion as a result of using different plating rates. From all test data and observations, the purity of the plated metal improved and other properties and qualities of the plating and of the metal remained constant throughout the faster plating rates of the exemplary baths. Bath plating rates depend primarily on concent­ rations of reducing agents used, but manipulation of other bath parameters can also affect the plating rate. In the above examples, formaldehyde was the primary agent. Other baths may use sodium borohydride or another such agent or combination. The particular proportions must be limited to those levels that will not produce bath decomposition. It will be seen from the foregoing description and test results that an increase in deposition rate of metal from an autocatalytic bath produces the very desirable result of lower residual resistivity. This characteristic is extremely desirable because of lower energy losses due to resistance and less circuit fabrication time. Plated metal with specific residual resistivities can be achieved through rate variations. Thus, by first determining the relationship between residual resistivity and variations in plating rate, a particular resistivity can be obtained by merely controlling the plating rate of a bath for depositing a metal. This obviously permits the desired residual resistivity profile of a conductor to be varied over its cross section and over its length. The disclosed technique of resistance variation now enables some control over the resistance of plated metal. Heretofore a change in the resistance of copper, for example, could be achieved only through annealing, a process clearly not suitable for printed circuit fabrication.

Claims: 1. Method of depositing a metal on a substrate in a plating bath, characterized by the steps of - determining, in a first step, the residual resistivity of a plated metal as a function of plating rate in the plating bath, - selecting, in a second step, the plating rate in the plating bath according to the desired residual resistivity of the metal to be deposited. 2. Method according to claim 1, wherein an autocatalytic electroless plating bath is used and wherein the plating rate is adjusted by changing the bath formulation. 3. Method according to one of the preceeding claims, wherein the residual resistivity of the plated metal is selected to be minimal with respect to the function determined in the first step of claim 1. 4. Method according to one of the preceeding claims, wherein the plating rate is selected within a range where the residual resistivity decreases with increasing plating rates. 5. Method according to one of the preceeding claims, wherein the plating rate is kept constant while depositing a metal layer whose thickness is preselected according to the desired sheet resistance of the layer. 6. Method according to one of the preceeding claims, wherein the plating rate is changed during the plating process to deposit a metal with a pre­ selected depth-dependent-resistivity-profile. 7. Method according to one of the preceeding claims, wherein the plated metal is copper. 8. Method according to claim 7, wherein the plating rates are selected in the range of 0.002 to 0.004 mm/hr. 9. Electric component comprising a substrate with a conductor of plated metal, characterized in that the residual resistivity in a cross-section of the conductor varies as a function of depth.

Inventors: DAY, MELANIE ANN, KASCHAK, RONALD ANTHONY, SCHUBERT, STEVEN ASHLEY
Applicants: INTERNATIONAL BUSINESS MACHINES CORPORATION
Application year: 1987
Main classification: C23C18
IPC codes: H05K3, C23C18