AN X-RAY-TRANSPARENT MEMBRANE AND ITS PRODUCTION METHOD

Abstract: A membrane (12) of the present invention used for a mask (10 -13) for X-ray exposure is made of an amorphous of boron nitride carbide hydrogenated, containing 1 to 10 atomic percent of carbon. This membrane (12) is made in a plasma CVD, whose source gases are ammonia, diborane and ethane diluted in argon gas. The flow rate ratio of the ammonia to the diborane is 0.6 to 1.55, the deposition temperature is 350 to 500°C, the gas pressure is 60 to 250 Pa, an applied RF power is 0.1 to 0.17 W/cm². Thus formed membrane (12) is adequately transparent to visible light and the X-ray used for mask alignment, while keeping the stiffness enough and the residual stress properly tensile.

Description: This invention relates to a material for a membrane as disclosed in the introducing part of claim 1. It is used for an X-ray mask used in a fabrication process of fine pattern of a semiconductor device, such as VLSI (very large scale integrated circuit). The word "membrane" is used to mean a film spreading in a space. As well known, an X-ray proximity exposure has been employed in a precise transcription in pursuit of a finer pattern, such as of sub micron resolution. Accordingly, a mask for the X-ray exposure has also been developed in place of the optical mask using quartz substrate. A structure and the fabrication process of the mask for the X-ray exposure is shown in FIGs. 1 and 2. On a wafer 10 usually made of silicon 110 mm in diameter and 4 ∼ 5 µm thick, there is formed a layer 12 made of a material transparent to the X-ray. Next, a mask pattern 13 made of a metal which is not transparent to the X-ray is formed on the transparent layer 12. Material of thus formed mask pattern 13 is chosen from heavy metals, such as gold, tantalum and tungsten, which prevent the X-ray from penetrating therethrough, therefore act as a mask. Next, the central portion 10' of the wafer 10 is removed typically by a reactive ion etching as shown in FIG. 2. Thus, the central portion of the layer 12 remains as a membrane as well as the peripheral portion of the wafer 10 remains as a frame 11 to support the membrane. Thus, the X-ray mask is formed. The quartz which has been used for the substrate of the optical mask can not be used for the X-ray mask, because the quartz absorbs the X-ray. If beryllium or boron which is transparent to the X-ray is used for the membrane, an optical alignment of the mask can not be carried out because they are not optically transparent. Therefore, materials suitable for the membrane of the X-ray mask have been intensively investigated, as follows: 1. A polymer of BN (boron nitride), such as reported by Morita et al. in The 33rd Joint Convention of Institutions of the Applied Physics, Spring, 1961, Japan. The use of boron nitride for a X-ray transmitting film is also disclosed in "Patent Abstracts of Japan", Vol. 10, No. 237 (P-487) (2293) Aug. 15, 1986. this film mainly consisting of B x N x C 1-x is formed on a substrate to be dissolved and removed by using nitrogen gas, diborane gas and hydrocarbon gas on the basis of a plasma CVD process. 2. An amorphous BN:H (hydrogenated boron nitride) or BNC:H (hydrogenated boron nitride carbide), where the notation ":H" indicates that the H (hydrogen atom) is made from a hydride source gas in a CVD (Chemical Vapor Deposition) processing and terminates a dangling bond. This material is reported, for example, ibid or by K. Montesser et al. in "Thin Solid Films" 117(1984) 311-317. However, there have been discussed only the transparency characteristics to the X-ray or visible light. On the other hand, as for requirements of the X-ray membrane, not only these transparency characteristics but also, at the same time, the below-described mechanical characteristics must be considered, which have not been fully satisfied. a. Stiffness (represented by Young's modulus) and high elastic limit (represented by tensile strength and rigidity). b. Proper residual tension at the operating condition. The above-mentioned stiffness and residual tension are required by the following reason. As shown in FIG. 3, when the X-ray mask is in use having the X-ray 14 irradiate from the back of the mask which is upside-down of FIG. 2, the clearance between the membrane 12 having the mask pattern 13 thereon and the resist film 22 on a wafer 21 must be kept as narrow as approximately 10 µm in order to attain a sharp resolution. If an adequate amount of stiffness as well as tension is not obtained remaining in the membrane, the membrane may droop down towards the resist film 22, causing a non uniform clearance thereof, and consequently the clearance must be widen to avoid touch of the pattern to the resist. This is caused by the so thin membrane as 4 to 5 um having so large diameter typically as 60 mm. This residual tension is produced by the intrinsic internal stress and larger thermal shrinkage of the membrane material than that of the frame 11, because the membrane is formed at a high temperature, such as 400 °C. If the residual tension is negative, i.e. compressive, the membrane is likely to have wrinkles. Therefore, a material having a large stiffness as well as a large residual tension therein has been searched for. The preferable amount of the stiffness of the membrane is approximately 3 × 10¹² dyne/cm² of Young's modulus. And, the preferable amount of the residual tension is approximately 0.5 to 1.0 × 10⁹ dyne/cm², of course which must be lower than the tensile strength of the membrane material so that a natural break of the membrane can be avoided. The above-mentioned transparency to the visible light is required because the X-ray mask is aligned to the wafer by projecting a visible light through the membrane onto the resist film 22, therefore unless the membrane is adequately transparent, the required resolution of the alignment can not be achieved. Summarizing the problems of the prior art amorphous BN:H are that: it is not adequately transparent to the light used for the alignment, while keeping a proper amount of stiffness as well as the residual tension therein. In other words, if the amorphous BN:H is made thick for gaining the strength, the transparency is degraded. Among above described requirements, the stiffness is the most serious. Therefore, their improvements have been in need. It is an object of the invention, therefore to provide a material used for the membrane of an X-ray mask, having an adequate stiffness as well as adequate residual tension therein while having an adequate transparency to the X-ray projected thereto and a visible light. This object is achieved by the features of claim 1. An X-ray transparent membrane as claimed is made of a hydrogenated amorphous boron nitride carbide (a-BNC:H) having the carbon contents of 1 to 10 atomic percent. This material is made by a plasma CVD method, in which a diborane (B₂H₆) gas, an ammonia (NH₃) gas and methane (CH₄) gas are used as source gases diluted in an argon gas. And the conditions are; gas pressure: 60 to 250 Pa (Pascal), applied radio frequency power: 0.1. to 0.17 w/cm², deposition temperature: 350 to 500 °C, and ratio of flow rates of ammonia gas to diborane gas: 0.2 to 1.7. Correlation of this ratio of ammonia/diborane to the deposition temperature may also be specified between two formulas: For T = 350 to 450 °C R = 0.01 T - 2.8 and R = 0.01 T - 3.2, and For T = 450 to 500 °C R = 1.7 and R = 1.3, where R indicates the flow rate ratio of ammonia /diborane and T indicates the deposition temperature in degree centigrade. Thus, satisfactory Young's module, residual tension and transparency are achieved. The above-mentioned features and advantages of the present invention, together with other objects and advantages, which will become apparent, will be more fully described hereinafter, reference being made to the accompanying drawings forming a part hereof, wherein like numerals refer to like parts throughout. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 shows a step for fabricating an X-ray mask. FIG. 2 shows a cross-sectional view of an X-ray mask. FIG. 3 shows a position of an X-ray mask while used for X-ray exposure onto a resist film on a semiconductor wafer. FIG. 4 schematically illustrates a plasma CVD apparatus used for embodying the present invention. FIG. 5 shows effects of applied RF power density on deposition rate and residual stress at a constant flow rate of CH₄. FIGs. 6 show effects of a flow rate ratio of NH₃ /B₂H₆ and flow rate of CH₄ on deposition rate and residual stress at a constant deposition temperature. FIGs. 7 show effects of a flow rate ratio of NH₃ /B₂H₆ and deposition temperature on deposition rate and residual stress at a constant flow rate of CH₄. FIG. 8 shows optimum correlation of a flow rate ratio of NH₃ /B₂H₆ and deposition temperature. FIG. 9 shows optical transmittance depending on the wave length. Table 1 shows characteristics of the material according to the present invention in comparison with the prior art material. Table 2 shows carbon contents of the materials of the present invention. DESCRIPTION OF THE PREFERRED EMBODIMENTS A plasma CVD apparatus used for preliminary experiments as well as for embodying the present invention is first explained referring to FIG. 4. In a reaction chamber 20, there are provided a pair of RF (radio frequency) electrodes 23 and 24, which are made of plane electrodes approximately 20 cm in diameter and are paralleled by 35 mm spacing. Into the upper electrode 23 source gases and RF power is fed by a feeder pipe 31. The fed-in gases are supplied further into the reaction chamber 20 through small holes 25 provided on the inside surface of the upper electrode 23, so that fresh gases can be used for the reaction. On the lower electrode 24 a silicon wafer 10 on which a membrane is to be formed is placed. Temperature of the lower electrode 24 is checked by a thermometer 27 provided thereon and the temperature is controlled by a heater 26 and its power source 28. The lower electrode 24 is electrically grounded. An RF power of 13.56 MHz is supplied from a RF power source 29 via a power meter 30 and the feeder pipe 31 to the upper electrode 23. Another output terminal of the RF power source 29 is grounded. Thus applied RF power to the two electrodes 23 and 24 generates a plasma therebetween. Source gases for the CVD reaction are a methane gas, an ammonia gas and a diborane gas respectively supplied from a methane gas source 32, an ammonia gas source 34 and a diborane gas source 36, each controlled by valves 33, 35 and 37 through the feeder pipe 31 into the reaction chamber 20. The ammonia and the diborane gases 34 and 36 are diluted in argon gas by 4 % by weight respectively. If the diborane content exceeds 6 %, the diborane gas becomes polymeric. The argon gas not only acts as a carrier of the source gases but also helps a stable plasma generation in the reaction chamber. The reaction chamber 20 is evacuated through a gas outlet 40 by a pump 41 so that the inner gas pressure of the reaction chamber is kept predetermined value. Operating conditions to be controlled are the following items. (1) Gas pressure in the reaction chamber. (2) Total flow rate of the supplied source gases. (3) RF power. (4) Contents ratio of the source gases. (5) Temperature for forming the deposition. The gas pressure is determined by the balance of the flow rates of the fed-in gas and the evacuated gas. A high gas pressure means more amount of gas participating the reaction than that of the low pressure. And the gas pressure also give an immediate effect to the gas discharge, namely the plasma generation. According to experiments by the inventors, the gas does not reliably discharge when the gas pressure is lower than 60 Pa or higher than 250 Pa. Amount of the gas supply to keep the predetermined gas pressure depends on the size of the CVD apparatus as well as the evacuation pump, accordingly in the apparatus by which the experiments were carried out the predetermined gas pressure 200 Pa is obtained with 300 sccm of the total gas supply including the argon diluent. As for the RF power, in the experiments carried out by the inventors using the apparatus of FIG. 4, the deposition rate and the residual stress are measured with a test piece made at 400 °C, with the flow rate ratio NH₃ /B₂H₆ = 1, and methane gas flow rate 10 sccm in total gas flow rate 300 sccm, then it is found as shown in FIG. 5 that the proper amount of applied RF power density is 0.10 to 0.17 W/cm², where the power density is calculated for the applied power per the facing area of the RF electrode. Too high power application causes an excess ion bombardment which removes the deposition more than the depositing amount. Too low power application make it difficult to form the deposition. Considering the above-described experimental results, the below-referred data are measured by the plasma CVD apparatus shown in FIG. 4 at fixed conditions that the gas pressure is 200 Pa, the applied RF power 0.13 W/cm², and the 10 sccm flow rate of the methane gas in the total gas flow rate 300 sccm unless otherwise specified. Data of deposition rate and residual stress are gathered by varying the flow rate of the methane as well as the flow rate ratio NH₃ /B₂H₆ while keeping the total gas flow rate constantly at 300 sccm as well as the deposition temperature constantly at 400 °C, as shown in FIG. 6(a) and (b) respectively. It is observed in the figures that the residual stress is not influenced so much by the amount of the methane flow rate, while the deposition rate is influenced for some degree. Accordingly, fixing the methane gas flow rate constantly at 10 sccm, the deposition rate and the residual stress for varied temperatures as well as varied flow rate ratios NH₃ /B₂H₆ is measured as shown in FIG. 7(a) and (b) respectively. It is observed in the figures that there is an optimum point of the flow rate ratio of NH₃ /B₂H₆ for each deposition temperature, and an optimum temperature of the deposition temperature nearly at 450 °C. At 500 °C the stress variation becomes of a different mode. Summarizing the obtained data, values of Young's module of thus produced membrane are written in FIG. 8 as dependant of the deposition temperature and the flow rate ratio of NH₃ /B₂H₆. Optimum area of the correlation between the deposition temperature and the flow rate ratio of NH₃ /B₂H₆ is defined by the area sandwitched by the below-cited formula (o) and (p), and the area sandwitched by the below-cited formula (q) and (r), in which R indicates a flow rate ratio of NH₃ /B₂H₆ and T indicates the deposition temperature in degree centigrade: For the temperature range between 350 and 450 °C, R = 0.01 T - 2.8 (o), and R = 0.01 T - 3.2 (p) For the temperature range between 450 and 500 °C, R = 1.7 (q), and R = 1.3 (r). The status of the produced material at the four areas outside the above-mentioned optimum area in the figure, respectively indicated by arrow marks A ∼ D are as follows: At the area indicated by the arrow mark A, the tensile stress becomes too weak or rather compressive resulting in wrinkles of the produced membrane. At the area indicated by the arrow mark B, the tensile stress becomes so strong that the produced membrane can not withstand its own tensile strength resulting in a break of itself. At the area indicated by the arrow mark C, namely below 350 °C, the produced membrane becomes less consolidated and also loses its reproducibility. At the area indicated by the arrow mark D, namely over 500 °C, not only the the Young's module does not increase but also the produced material becomes a different type. Comparison of the most typical BNC:H of the present invention with the most typical prior art a-BN:H (amorphous boron nitride made by low pressure CVD) each 4 µm thick is shown in table 1, where characteristics of transparency to both the visible light and the X-ray are included. The optical gap (energy) in the table defines the absorption edge of the amorphous material, and corresponds to the lower end of the absorbing wave length on an analogy to a crystal material. The lower value of the optical gap means the wider range of the wave length and better transparency to the light. The transparency for various wave length is also compared in FIG. 9. As observed in the table 1, the tensile stress, the Young's module and the X-ray transparency achieve about same order of the BN:H, allowing wider margin. However the transparency characteristics to the visible light is improved from 2.1 eV to 3.o eV in the optical gap, and the transparency at 633 nm, which is of a He-Ne laser widely used for the mask alignment, is improved from 30 % to 80 ∼ 90 %. This is the advantage of the invention. Though in the above-described embodiment of the invention argon is used as a diluent, or a carrier of source gases, nitrogen may be used in place of the argon. It is supposed that the nitrogen gas shares some part of supply of nitrogen atoms from the NH₃ gas, resulting in requiring less NH₃ flow rate ratio as an optimum condition. Consequently, the amorphous BNC:H made with the flow rate ratio of NH₃ /B₂H₆ = 0.8 in nitrogen diluent gives the following results; the X-ray transparency: 95 %, the optical gap: 2.8 eV, the residual stress: 3.7 × 10⁸ dyne/cm², Young's module: 1.2 × 10¹² dyne/cm². Method for measuring the residual stress and the Young's module is by measuring the swelling of a circular membrane whose periphery is fixed ont a frame by the use of Newtonian Interferometry when a side of the membrane is pressed by a air pressure, and then calculating the residual stress and the Young's module with the obtained amount of the swelling, etc. The frame for supporting the membrane to be measured is a silicon wafer of <100>, 525 µm thick, having 1.3 × 10¹² dyne/cm² Young's module, and 0.28 Poisson's ratio. Preparation of the test piece is as follows: After an approximately 4 µm thick amorphous BNC:H is formed on the wafer, 40 mm in diameter of the central portion of the silicon wafer is removed by etching, thus a test piece of the membrane is formed. Atomic contents of the produced amorphous BNC:H by various production conditions are evaluated and shown in Table 2. By referring these data with the residual stress as well as Young's module of FIGs. 6 through 7 and Table 1, it is apparent that the carbon contents contributes to provide a material having an improved transparency to visible light and proper values of the mechanical strength. The above-described amount of the applied RF power density is for the electrodes in the apparatus described in FIG. 4, therefore if the dimension of the electrodes, particularly the clearance of the two parallel electrodes, is different from 35 mm of FIG. 4, the optimum value of the applied RF power density may be different. A different RF power frequency from 13.56 MHz may also require a different optimum power supply condition.

Claims: A method for producing a hydrogenated amorphous boron nitride carbide of a membrane (12) of an X-ray mask (10 - 13) by a plasma chemical vapor deposition by using a diborane gas, an inert gas and a hydrocarbon gas, characterized by using a methane gas (32) as a hydrocarbon gas and ammonia gas (34) and said diborane gas (36) both diluted by said inert gas; wherein the production conditions are specified by that: gas pressure is 60 to 250 Pascal; and correlation of deposition temperature and said flow rate ratio of said ammonia gas (34) to said diborane gas (36) is specified in between below-cited two formulas, where R indicates flow rate ratio of ammonia to diborane and T indicates deposition temperature in degree centigrade; for 350 to 450°C deposition temperature, R = 0.01T - 2.8 and R = 0.01 T - 3.2; and for 450 to 500°C deposition temperature, R = 1.7 and R = 1.3. A method for producing a hydrogenated amorphous boron nitride carbide according to claim 1, characterizd by an applied radio frequency power which is 0.10 to 0.17 W/cm² calculated by area of a radio frequency electrode plate (23, 24) used in the plasma chemical vapor deposition. A method for producing a hydrogenated amorphous boron nitride carbide according to claim 1 or 2, characterized in that said methane gas (32) is added to the ammonia (34) and the diborane gas (36) by 33 to 84 % in volume of the total of the ammonia and the diborane gas. A method for producing a hydrogenated amorphous boron nitride carbide according to claim 2 or 3, characterized in that said applied radio frequency power (29) is of 13.56 MHz. A method for producing a hydrogenated amorphous boron nitride arbide according to any one of claims 2 to 4, characterized in that said electrodes (23, 24) to which said radio frequency power (29) is applied are in parallel and spaced by 35 mm. A method for producing a hydrogenated amorphous boron nitride carbide according to any one of claims 1 to 5, characterized in that said inert gas is argon. A method for producing a hydrogenated amorphous boron nitride carbide according to any one of claims 1 to 5, characterized in that said inert gas is nitrogen. A hydrogenated amorphous boron nitride carbide of a membrane (12) of an X-ray mask (10 -13), characterized by comprising carbon atom contents by 1 to 10 %.

Inventors: NAKAISHI, MASAFUMI, YAMADA, MASAO MAISON DE NOBLESSE 308
Applicants: FUJITSU LIMITED
Application year: 1987
Main classification: G03F1
IPC codes: C23C16, G03F1