Integrated optic disc pickup

Abstract: An integrated optic disc pickup comprising an optical waveguide in the form of a insulation layer pro­ vided on the surface of a substrate, a semiconductor laser disposed outside the waveguide, a beam splitter of the transmission type and a Luneburg lens provided for the path of propagation of a laser beam from the semiconductor laser through the waveguide and arranged in the order mentioned in a direction away from the laser, a transmission grating provided on the path through the waveguide to be followed by the laser beam upon having its direction changed by the beam splitter after emanating from the laser, pass­ ing through the beam splitter and the Luneburg lens, being reflected from an optic disc disposed outside the waveguide and passing through the Luneburg lens, and first and second photodetectors disposed on the paths of propagation through the waveguide of two portions of the laser beam divided by the diffraction grating.

Description: An integrated optic disc pickup according the the preamble of claim 1 is known from IEEE Journal of Quantum Electronics, 1986, (figure 40a). Furthermore an optical waveguide lens is disclosed in GB-A-2 169 119. Generally, integrated optic disc pickups comprise a system of multiplicity of lenses, a beam splitter and photodetectors in combination. However, the conventional optical pickup is cumbersome to assemble and adjust and is therefore costly, while the optical pickup, which is large-sized, has the drawback of requiring a prolonged access time. To overcome the drawbacks, Nishihara et al. have proposed an integrated optic disc pickup (see IEICE (The Institute of Electronics, Information and Communication Engineers) Technical Report, OQE85 -72(1986)). The proposed pickup includes a focusing grating coupler for focusing a laser beam on the optic disc and requires control of the absolute wavelength of the light source since the focusing characteristic of the coupler is dependent on the wavelength of the light source. Insofar as the semiconductor laser is used as the light source, accordingly, the proposed arrangement involves extreme difficulties and is infeasible. The object underlying the present invention is to provide an integrated optic disc pickup which is improved such that it enhances the focusing efficiency and facilitates the fabrication of a pickup. This object is solved according to the present invention by the features stated in the characterising portion of claim 1. Further embodiments are characterized in claims 2 to 7. The present invention will become apparent from the following embodiments to be described with reference to the accompanying drawings. Fig.1 is a diagram showing the construction of an integrated optic disc pickup embodying the invention; Fig.2 is a view in section taken along the line II-II in Fig. 1; Fig.3 is a view in section taken along the line III-III in Fig. 1; and Fig. 4 is a view in section taken along the line IV-IV in Fig. 1. The integrated optic pickup of the present invention consists essentially of an optical waveguide in the form of a semiconductor layer or insulation layer provided on the surface of a substrate, a semiconductor laser disposed outside the waveguide, a beam splitter and a optical waveguide lens provided for the path of propagation of a laser beam from the semiconductor laser through the waveguide and arranged in the order mentioned in a direction away from the laser, a diffraction grating provided on the path through the waveguide to be followed by the laser beam upon having its direction changed by the beam splitter after emanating from the laser, passing through the beam splitter and the optical waveguide lens, being reflected from an optic disc disposed outside the waveguide and passing through said lens, A photodetector means is disposed on the paths of propagation through the waveguide of two portions of the laser beam divided by the diffraction grating. The substrate to be used in the invention is made of glass, Si or the like and is, for example, 5 mm in length, 3 mm in width and 1 mm in height. The optical waveguide of the invention is a semiconductor layer of GaAlAs, GaInAlP or the like, or an isulation layer of Si₃N₄, SiO₂ or the like. For example, the Si₃N₄ layer is preferably 0.5 µm to 2.0 µm, more preferably 1 µm in thickness. A semiconductor laser is disposed at one side of the waveguide externally thereof. At the other side of the waveguide opposite to the laser and away from the waveguide, an optic disc is positioned with its surface perpendicular to the path of propagation of the laser beam from the laser. Examples of useful semiconductor lasers are those of GaAlAs type, InGaAlP type or InGaAsP type. Preferably, the optic disc is 0.158 µm in the depth of its pits. A beam splitter is provided in the optical waveguide, and a mode index lens on the waveguide. An example of useful beam splitter is a beam splitter of the transmission type, 1 mm in width, 1 µm in thickness and 1.5 mm in length, formed by mesa-etching an optical waveguide of Si₃N₄ film photolithographically. Also usable is a beam splitter of the diffraction grating type. Examples of useful optical waveguide lenses are a Luneburg lens, geodesic lens, etc. The Luneburg lens is formed, for example, by depositing As₂S₃ on the waveguide of Si₃N₄ by vacuum evaporation, and is 1 µm in thickness at its center and 1.5 mm in diameter and 3 mm in focal length. The geodesic lens is formed on the waveguide in the shape of a hemisphere by the diffusion of Ti. The diffraction grating to be used in the invention is, for example, a transmission grating formed on the waveguide. The transmission grating is formed by depositing As₂S₃ on the waveguide of Si₃N₄ film by vacuum deposition and making pits, 20 µm in width and arranged at a pitch of 4 µm, in the deposit by the photolithographical method. The photodetector means of the invention comprises a first photodetector for detecting a focus servo signal from the optic disc and a second photodetector for detecting a tracking signal from the optic disc. The second photodetector is so disposed that one of the two laser beam portions divided by the diffraction grating, i.e. the primary diffracted beam, is incident thereon. More specifically, the photodetector means comprises two photodiodes formed on the waveguide of Si₃N₄ film. Each photodiode comprises two divided portions spaced apart. According to the present invention, the optic pickup is provided with means for driving the pickup transversely of the track of the optic disc and also in the direction of the optical axis thereof. The pickup is positioned perpendicular to the plane of the disc. The Luneburg lens, which is 3 mm in focal length, is positioned at a distance of 3.0 mm from the semiconductor laser and focuses a beam spot, 1 µm in diameter, on the surface of the disc at the beam focused position. A specific embodiment of the invention will be described below with reference to Fig. 1. However, the invention is in no way limited by the embodiment. The integrated optic disc pickup shown in Fig. 1 consists essentially of a beam splitter 1, a Luneburg lens 2, a diffraction grating 3 and two photodetectors, i.e. first and second photodetectors 4 and 5. To fabricate the pickup device, an Si₃N₄ of 1 µm in thickness is first deposited on the entire surface of a glass substrate 20 by vacuum evaporation to form an optical waveguide 6. As seen in Fig. 2, the beam splitter 1 is in the form of a recess, 1 mm in width d and 1.5 mm in length, formed by mesa-etching the waveguide 6 by the usual photolithographical process. This beam splitter 1 of the transmittion type reflects the beam at the surface defining the recesss. Alternatively, some other beam splitter are usable. Next, the first and second photodetectors 4, 5 are formed. As shown in Fig. 4, an electrode having a window or a transparent electrode, serving as a P side electrode 10, is formed on the waveguide 6 by depositing Al thereon by vacuum evaporation. P-type and N-type polysilicons are then successively grown, each to a thickness of 2 µm, over the electrode 10 by the chemical vapor deposition (CVD) process. Subsequently, an electrode 11 is formed in the same manner as the electrode 10. The polysilicon layers of the P and N types are thereafter etched by the usual photolithographical process except for the required P, N junction portions to provide the first and seocnd photodetectors 4 and 5. These photodetectors 4 and 5 each comprise two divided photodiodes, i.e., a pair of photodiode devices 4a, 4b and a pair of photodiode devices 5a, 5b, respectively. The photodiode devices in each pair are spaced apart by a distance of 10 µm. Next, As₂S₃ (arsenic sulfide) is vacuum-deposited on the waveguide 6 by the shadow mask process to form the Leneburg lens 2 which is shown in Fig. 2 in section. The lens is 1 µm in thickness at its center, 1.5 mm in diameter D and 3 mm in focal length. The Luneburg lens 2 thus formed is at a distance H of 3.0 mm from the light source, i.e., a semiconductor laser 7. The use of the Luneburg lens is not limitative; also usable is a geodesic lens formed by diffusing Ti in a hemispherical shape or an other mode index lens. To form the diffraction grating 3 next, As₂S₃ is deposited to a thickness of 1 µm by vacuum deposition. A transmission grating having pits at a pitch of 4 µm as seen in Fig. 3 is then formed in the deposit by the photolithographical process. The grating is 20 µm in width L (Fig. 1). A beam splitter is usable as the diffraction grating in place of the transmission grating. In this way, the pickup device is fabricated. The pickup device of the foregoing construction and having the semiconductor laser 7 fixed thereto is mounted on a frame (not shown) which is movable transversely of the track of an optical disc and along the optical axis thereof. The disc is positioned perpendicular to the device. In this arrangement, the distance H between the laser 7 and the Luneburg lens 2 is 3.0 mm. The laser beam propagates through the pickup in the following manner. First, the laser beam (for example, 0.78 µm in wavelength) 8 emanating from the semiconductor laser 7 is incident on the optical waveguide 6, whereupon the beam 8 passes through the beam splitter 1 and then through the Luneburg lens 2 and reads information from a pit of the optic disc 9. The bean then returns to the beam splitter 1 through the lens 2 and impinges on the grating 3, whereby the beam is divided into two portions. One beam portion is incident on the first photodetector 4, giving a focus servo signal. The other beam portion, i.e. the primary diffracted beam, impinges on the second photodetector 5 to produce a tracking signal. According to the embodiment described above, the beam from a semiconductor laser is focused on the surface of the optic disc by a Luneburg lens, so that the bean focusing characteristics are not dependent on the wavelength of the laser beam unlike the prior art, making it possible to accurately project a beam spot of optimum form onto the pit of the disc and eliminating the need to strictly control the absolute wavelength of the laser beam. Further in the case of the focus servo signal detecting method using a grating, it is possible to electrically correct the zero point of the photodetector, with the result that the focus servo signal can be detected even when the absolute wavelength of the laser beam varies.

Claims: An integrated optic disc pickup comprising an optical waveguide (6) in the form of a semiconductor layer or insulation layer provided on the surface of a substrate, a semicondutor laser (7) disposed outside the waveguide (6), further comprising a beam splitter (1) which is provided in the path of the laser beam wherein a diffraction grating (3) is provided on the path through the waveguide (6), further being provided with photodetector means (4,5) disposed on the path of propagation through the waveguide for two portions of the laser beam being divided by the diffraction grating, characterized in that an optical waveguide lens (2) is provided for in the path of propagation of a laser beam from the semiconductor laser, through the waveguide (6), wherein said beam splitter (1) and said optical waveguide lens (2) are arranged in the order as mentioned before, said diffraction grating (3) being provided between the beam splitter (1) and said photodetector means (4,5), whereat the direction of the laser beam is changed by the beam splitter (1) after emanating from the laser, passing through the beam splitter (1) and the optical waveguide lens (2), being reflected from an optic disc disposed outside the waveguide (6) and passing through the optical waveguide lens, and that the optical waveguide (6) and the optical disc (9) are arranged linearly in the same plane. A pickup as defined in claim 1 wherein the optical waveguide lens (2) is a Luneburg lens. A pickup as defined in claim 1 wherein the optical waveguide lens (2) is a geodesic lens. A pickup as defined in claim 1 wherein the substrate is a glass substrate (20) having an Si₃N₄ film formed thereon by vacuum evaporation. A pickup as defined in claim 2 wherein the waveguide (6) is made of Si₃N₄, and the Luneburg lens (2) is formed on the waveguide (6) by depositing an As₂S₃ thereon by vacuum evaporation. A pickup as defined in claim 2 or 5 wherein the Luneburg lens (2) is 1 µm in thickness at its center, 1,5 mm in diameter and 3 mm in focal length and is positioned at a distance of 3,0 mm from the semiconductor laser for focusing a beam spot of 1 µm in diameter on the optic disc. A pickup as defined in claim 3 wherein the geodesic lens (2) is formed by diffusing Ti in the shape of a hemisphere.

Inventors: HIJIKATA TOSHIKI, KANEIWA SHINJI, KUDO HIROAKI, TAKIGUCHI HARUHISA, YANO SEIKI, HIJIKATA, TOSHIKI, KANEIWA, SHINJI, KUDO, HIROAKI, TAKIGUCHI, HARUHISA, YANO, SEIKI
Applicants: SHARP KK, SHARP KABUSHIKI KAISHA
Application year: 1987
Main classification: G11B7
IPC codes: G11B7, G02B6