PROCESS FOR PRODUCTION SILICON CARBIDE WHISKERS

Abstract: A process for producing silicon carbide whiskers by react under heat solid silicon-containing starting material and carbon-containing starting material in a reaction vessel, wherein a molded material, which is prepared by previously molding the silicon-containing starting material into a predetermined shape, and a powdery carbon starting material are heated to a predetermined rection temperature in a hydrogen gas atmosphere. Silicon carbide whiskers which are linear with no bends, long fiber length, high aspect ratio and low silicon dioxide impurity can be obtained at a high yield rate 90% based on silicon vaporized from the silicon-­ containing starting material.

Description: BACKGROUND OF THE INVENTION: Field of the Invention: This invention concerns a process for producing silicon carbide whiskers, and more specifically, it relates to a process for producing silicon carbide whiskers which are linear, of high aspect ratio and high purity at a high yield. Description of the Prior Art: Silicon carbide whiskers have been used in various applications, and for example, where used as reinforcing materials by utilizing their strength, it is required that the fiber length is long and the aspect ratio (defined as a ratio of the length relative to the cross sectional diameter) of the fiber is high. As a typical process for producing silicon carbide whiskers, there has been known, for example, a method of uniformly mixing powdery silicon-containing starting material and carbon-containing starting material and reacting them at a high temperature as described, for example, in Japanese Laid Open Patent Application No. Sho 58-14570. Further, for intensely mixing the starting material as described above, it has also been proposed to mold a powdery silicon-containing starting material and a carbon-containing starting material and then heating them, see for example, Japanese Laid Open Patent Application No. Sho-58-20799. However, in such prior art methods, it has been difficult to obtain silicon carbide whiskers of long fiber length and high aspect ratio, and in addition, the resultant silicon carbide whiskers are generally of low purity containing unreacted silicon-containing starting material such as silica or the like and a purifying treatment such as using fluoric acid or the like is necessary before use. Further, it is not easy in the former method to separate the thus formed silicon carbide whiskers from the starting material. In addition, in the case of preparing silicon carbide whiskers through the heating of a solid-like silicon-containing starting material and a carbon-containing starting material, since impurities from the starting materials are generally dispersed uniformly in the resultant whiskers, if such impurities are present in a great amount, they have to be separated and removed. US Patent No. 3840647 describes a method of growing single-crystal whiskers of a variety of types from granular interdispersions, each interdispersion containing a catalyst. On the other hand, if it is desired not to separate and remove the impurity, it is necessary to limit the impurity content of the starting material to less than a certain level. In order to overcome the foregoing problems, the present inventors have already proposed a process of bringing the silicon-containing material and the carbon-containing material into contact and reaction at a temperature higher than 1,000°C wherein a metal chloride (typically represented by sodium chloride) is present (refer to Japanese Patent Publication No. 58-28758), or a process of mixing and introducing hydrogen chloride or chlorine to a mixture of a finely powderous silicon starting material, a carbon starting material and a catalyst under a non-oxidizing atmosphere and reacting to them at a temperature from 1,350°C to 1,600°C (refer to Japanese Laid Open Patent Application No. Sho 58-251964), but they have not been quite satisfactory in respect of the yield, the aspect ratio, etc. US Patent No. 3622272 describes a method of growing silicon carbide whiskers which comprises contacting a silica brick and graphite growth module with a reactant gas at an elevated temperature of from 2400°F to about 3000°F. EP Patent No. 0170362 describes a method of silicon carbide whisker growth whereby the silicon source is silica recovered from geothermal hot water. The recovered silica is of a powdery form. In view of the above, the present inventors have further studied the production of silicon carbide whiskers, and as a result, have achieved a process whereby when a powdery silicon-containing starting material is previously molded into a predetermined shape and heated to a high temperature together with a powdery carbon-containing starting material under the presence of a hydrogen gas, the silicon compound is selectively gasified and brought into reaction with carbon to thereby obtain silicon carbide whiskers which are linear with no bends, have a long fiber length, a high aspect ratio and an extremely high purity with high yield and productivity. Accordingly, we will describe a process for producing silicon carbide whiskers which are linear with no bends, have a long fiber length, a high aspect ratio and a high purity, at a high yield. The foregoing object of the present invention can be attained by a process of producing silicon carbide whiskers by heating to react a solid silicon-containing starting material with a carbon-containing starting material in a reaction vessel, wherein a molded product prepared by previously molding the silicon-containing starting material into a predetermined shape and a powdery carbon starting material are heated to a predetermined reaction temperature under a hydrogen gas atmosphere. The molded product comprising the silicon-containing starting material in the present invention includes three dimensional solids such as plate, bar, tube, cylinder, sphere, wire, granule or a combination of them which are molded by, for example, extrusion molding, press molding or pelletization. Generally, in a process for producing silicon carbide whiskers by heating to react a solid silicon-containing starting material with a carbon-containing starting material, the starting materials are charged into a reaction vessel which is inserted into a tubular reactor equipped with heating means, for example, an electrical furnace and heated to a predetermined temperature. In a process to be described, the molding product comprising a silicon-containing starting material as described above may also serve as a reaction vessel such as a tubular or box-like vessel for charging the starting powdery carbon material. Thus, in the process to be described, when the solid silicon-containing starting material is used in the form of its molding product, since a silicon compound is selectively gasified from the molding product and brought into reaction with carbon to form silicon carbide whiskers, silicon carbide whiskers of high purity with less than several percentage of impurity content can be obtained even when a solid silicon-containing starting material with low silicon or silicon oxide content is used. Further, since the resultant silicon carbide whiskers can be separated from the molding product extremely easily, the productivity is high. The silicon-containing molded product used herein preferably contains more than 30% by weight of silicon dioxide. It is preferable that the balance contains elementary silicon. Particularly, in the case of the latter, the silicon dioxide powder and the elementary silicon powder are mixed and molded while setting the mixing molar ratio from 0.5 : 1 to 10 : 1. Upon molding, both of the starting materials may be molded as they are, but molding with the addition of an organic binder can provide a favorable result. Typical example of the organic binder can include water-soluble polymer or organic solvent-soluble polymer such as PVA, CMC, HEC, methylcellulose, hydroxy propyl cellulose and PEG which may be used alone or in combination. Carbon black or powdery activated carbon, etc. may be used as the powdery carbon-containing starting material. Since these starting carbon materials have higher reactivity as they are finer and have greater bulk volume, carbon black with the BET specific surface area of greater than 100 m²/g, average grain size of less than 35 nm and bulk density from 0.06 to 0.2 g/cm³ is particularly preferred. In the process according to the present invention, use of a reaction catalyst is desirable. As a reaction catalyst, iron, nickel, cobalt or a compound thereof, for example, oxide, nitrate, chloride, sulfate or carbonate may be used in the form of powder or aqueous solution in admixture with the carbon starting material. A nickel compound is a particularly preferred catalyst which can be used in the present invention. Further, in the process according to the present invention, it is preferred to use a reaction promoter in order to accelerate the reaction, as well as obtain silicon carbide whiskers of high purity, high aspect ratio, and further, low bulk density. As such a reaction promoter, alkali metal or alkaline earth metal halide, particularly, chloride or fluoride can be used. Accordingly, the specific example thereof can include, for example, lithium chloride, sodium chloride, potassium chloride, calcium chloride, magnesium chloride, lithium fluoride, sodium fluoride and potassium fluoride. The most preferred reaction promoters are sodium chloride, potassium chloride, sodium fluoride and potassium fluoride. The present inventors have already proposed, in Japanese Application Laid Open No. Sho 58-251964 cited previously, a process for introducing hydrogen chloride or chlorine from the outside of the reaction system instead of the reaction promoter, for example, sodium chloride upon producing silicon carbide whiskers by the heating reaction of the silicon-containing starting material and the carbon-containing starting material. However, in the process to be described, since a molding product comprising a silicon-containing starting material and a carbon-containing starting material are heated in a hydrogen atmosphere in the presence of reaction promoter thereby generating the hydrogen halide from the reaction promoter in the reaction system and gasifying the silicon compound selectively from the molded product, which is reacted with carbon, it is possible to obtain a high yield of silicon carbide whiskers of high purity and having long fiber length and high aspect ratio. Therefore, according to the present invention, it is no longer necessary to use those gases such as hydrogen chloride or chlorine which are corrosive and difficult to handle as the starting material gas. Then, in the case of using a powder as the silicon-containing starting material, since there are very many portions in contact with the carbon-containing starting material as can be seen easily, the silicon carbide whisker-forming reaction proceeds substantially as a solid phase reaction, and as a result, the whiskers take a powdery form or a linear shape with many bends. However, by using the silicon-containing starting material in the form of a molded product, since the portions in contact with the carbon-containing starting material is considerably reduced, silicon monoxide which is a reduction form of silica is predominantly present in the gas phase, and we believe that accordingly, linear silicon carbide whiskers with no bends are formed. It should, however, be noted that the present invention is not restricted by the aforementioned theory. Referring more specifically to the case of using sodium chloride as the reaction promoter, since sodium chloride has a melting point at 800°C and a boiling point at 1,413°C under a normal pressure, it has already been gasified by the reaction condition in the preferred process according to the present invention, and an atmosphere where sodium chloride vapors at a high vapor pressure is provided within the reaction system. Sodium chloride does not change chemically but merely forms sodium chloride vapor if heated to a high temperature, for example, to 1,500°C in hydrogen or like other non-oxidizing atmosphere even if substances such as platinum or graphite are present together. However, in the case of heating sodium chloride to a predetermined temperature together with the molded product containing the silicon-containing starting material with hydrogen gas atmosphere as a carrier gas, sodium chloride is thermally decomposed to evolve hydrogen chloride continuously within the reaction system. On the other hand, in the case of using non-oxidizing gas other than hydrogen gas as the carrier gas, for example, argon, helium, nitrogen or like other gas, no evolution of hydrogen chloride is observed. Further, the hydrogen gas atmosphere referred to in the present invention can include not only hydrogen gas alone but also such an atmosphere containing greater than 70 volume percent hydrogen and the balance a non-oxidizing inert gas. That is, when the catalyst and the reaction promoter are mixed with the silicon-containing molded product starting material and the powdery carbon-containing starting material and heated under a non-oxidative atmosphere, although the evolution of hydrogen chloride is not observed even if it is heated up to 1,500°C, for example, in a nitrogen atmosphere, hydrogen chloride is, in fact, gradually evolved after the sodium chloride has melted in to hydrogen atmosphere, the amount evolved gradually increasing as the temperature goes higher than 1,000°C and the amount of the hydrogen chloride formed reaches its maximum at 1,400 - 1,600°C. Accordingly in the case of conducting the process of the present invention by a batchwise reaction, non-oxidative inert gas other than the hydrogen, for example, argon, helium, nitrogen, etc. may be used to flow through the reaction system as a carrier gas until the temperature reaches a predetermined reaction temperature and then the carrier gas can be switched to hydrogen gas. On the other hand, when conducting the process according to the present invention in a continuous reaction system, hydrogen gas is always provided in the reaction system and hydrogen halide from the reaction promoter is formed. The catalyst is used in the process according to the present invention in an amount ranging usually from 5 × 10⁻⁶ to 5 × 10⁻³ g, preferably, from 1 × 10⁻⁵ to 1 × 10⁻³ g per unit surface area (cm²) of the molded product of the silicon-containing starting material. If the amount of the catalyst is less than 5 × 10⁻⁶ g per unit surface area (cm²) of the molded product of the silicon-containing starting material, the catalytic effect is insufficient, and as a result, formation of the silicon carbide whiskers is insufficient and unreacted silicon-containing starting material remains in a great amount after the reaction under otherwise suitable conditions. On the other hand, if the amount is more than 5 × 10⁻³ g, catalyst powder remains in the resultant whiskers tending to complicate the purifying treatment for the silicon carbide whiskers produced. The alkali metal or alkaline earth metal halide reaction promoter is used within a range usually from 5 × 10⁻⁴ to 5 × 10⁻¹ g, preferably, from 1 × 10⁻³ to 1 × 10⁻¹ g per unit surface area (cm²) of the molded product of the silicon-containing starting material. If the amount is less than 5 × 10⁻⁴ per unit surface area (cm²) of the silicon-containing starting material molded product, since insufficient hydrogen halide is generated by the decomposition of the halogenated compound, the process the improvement of yield of the silicon carbide whiskers and the shape of the whiskers is poor. On the other hand, use of a greater amount than 5 × 10⁻¹ g is not desirable since the evolution of the hydrogen halide due to decomposition is locally concentrated and the gaseous silicon compound resulting from the molded product tends to be released as it is out of the system which decreases the amount of the silicon carbide whiskers. In the preferred process according to the present invention, the silicon dioxide-containing molded product and the solid carbon-containing starting material are heated in a hydrogen gas atmosphere to a predetermined temperature, for example, in a restricted space such as of an electric furnace thereby obtaining silicon carbide whiskers, whereby a remarkably high yield of silicon carbide whiskers can be obtained by maintaining the concentration of the hydrogen gas atmosphere always higher than 70%. For instance, in the case where the reaction furnace comprises a plurality of regions containing a reaction region for heating the silicon dioxide molding product and the solid carbon-containing starting material to react then, the restricted space referred to comprises such reaction regions and at least these regions in the reaction furnace may be maintained with an atmosphere containing more than 70% hydrogen concentration. In the process according to the present invention, it is considered that the silicon carbide whiskers are formed by the following reaction, although the present invention is no way restricted to such reaction mechanisms: C + 2H₂ --→ CH₄ (1) SiO₂ + CH₄ --→ SiO + CO + 2H₂ (2) SiO + 2CH₄ --→ SiC + CO + 4H₂ (3) That is, the hydrogen gas and the solid carbon starting material initially form a methane gas in accordance with the reaction (1), and the methane gas forms silicon monoxide gas at the surface of the silicon dioxide-containing molded product in accordance with the reaction (2). Then, silicon carbide is formed through the reaction (3) between the silicon monoxide gas and the methane gas. Accordingly, the overall reaction can collectively be represented as: SiO₂ + 3C --→ SiC + 2CO (4) In the reaction (4) above, although hydrogen does not contribute to the formation of silicon carbide, hydrogen is indispensable in the course of the reaction as can be seen from the reactions (1) - (3), and further, since the hydrogen gas comprises small molecules which easily diffuses into the reaction vessel to facilitate the reduction of silicon dioxide into silicon monoxide by methanation of the carbon it contributes to the increase in the yield of the silicon carbide whiskers. It is considered that since the silicon carbide whiskers are formed finally through the gas reaction as shown by the reactions (1) - (3), they are excellent in their acicular property. As has been described above in the foregoing reaction, the hydrogen gas makes an important contribution to the formation of the silicon carbide whiskers and the yield of the silicon carbide whiskers can significantly be improved and the acicular property thereof can also be improved remarkably by maintaining the hydrogen gas as the atmosphere in the reaction region so as always to be higher than 70%. To maintain the atmosphere in the reaction region to always contain hydrogen gas of higher than 70%, a great amount of hydrogen is caused to flow into the reaction furnace thereby preventing the reduction of the hydrogen concentration with the formation of by-produced carbon monoxide as described above. When a molded product, which is prepared by mixing a metal silicon powder and a silicon dioxide powder at a predetermined ratio and then molding them into a predetermined shape with addition of an organic binder, is charged into a vessel made of graphite in a state where powdery carbon starting material is present at the periphery thereof and heated while hydrogen gas flows past, the metal silicon and the silicon dioxide are heated to a high temperature under a reducing atmosphere to evolve silicon monoxide in a gaseous form, which is then brought into a gas phase reaction with the surrounding carbon starting material thereby obtaining silicon carbide whiskers of high purity with no bends and branches having a high aspect ratio and composed of acicular crystals at a high yield and high productivity. Both of the powders are preferably mixed and used at a molar ratio of SiO₂/Si from 0.5/1 to 10/1 based on SiO₂ and Si in the powders. The most preferred ratio is from 2/1 to 8/1. If the ratio is less than 0.5/1 and the amount of the SiO₂ ingredient is decreased, the molded product of the starting material softens to lose its initial shape under the temperature condition during the reaction tending to cause troubles in view of maintaining the shape of the molded product. Further, since the amount of rapidly reacting Si ingredient is relatively increased, the amount of silicon monoxide evolved is increased temporarily to render the starting material gas concentration higher to thereby disturb the shape of the resultant whiskers thereby often causing bending or branching. While on the other hand, if the ratio of the SiO₂ ingredient increases in excess of 10/1, since the slow reacting SiO₂ ingredient is relatively increased, the amount of the silicon monoxide evolved is decreased tending to reduce the amount of the whiskers produced, that is, lowering the productivity under the identical reaction conditions. Accordingly, it is desirable that both of the starting materials as described above are mixed and used at the SiO₂/Si molar ratio within a range from 0.5/1 to 10/1. In the present invention, both of the starting materials are mixed in the powdery state into a predetermined shape. Upon molding, while both of the starting materials may be molded as they are, molding with an addition of an organic binder can provide a satisfactory result. As a typical example of organic binder, there can be mentioned water-soluble polymer or organic solvent-soluble polymer such as PVA, CMC, HEC, methyl cellulose, hydroxy propylcellulose and PEG which may be used alone or in combination. In the process according to the present invention, the reaction temperature is at least higher than 1,400°C, and usually, it is preferably from 1,500 to 1,700°C. If the reaction temperature is lower than 1,400°C, the formation of silicon carbide whiskers becomes insufficient and a lot of unreacted silicon-containing starting material remains. On the other hand, if the temperature is higher, little or no further improvement of yield and reduction of impurity takes place and it causes an increase in production cost. Accordingly, the upper limit for the reaction temperature is usually at about 1,700°C. While various heating means may be used, electric heating is easy to use. The carrier gas containing the hydrogen gas in the process according to the present invention may be introduced into a reaction system at a rate of 0.5 - 50 ml/min and, preferably, from 1 to 20 ml/min per unit gas flow cross sectional area (cm²) of the reaction device. The reaction time is from 30 minutes to 10 hours and usually 2 to 6 hours is sufficient. If the reaction time is too short, a lot of unreacted starting material remains. while on the other hand, if the reaction is conducted for an excessively long time, the yield of silicon carbide whisker increases only slightly, so it provides no particular merit in view of the productivity and the heat energy cost. However, the present inventors have found, in the case of continuously producing silicon carbide whiskers by the process as described above, vapors containing elements such as sodium, potassium, magnesium, calcium, sulfur, iron and silicon are formed from the furnace material or reaction starting material thereby clogging the exhaust gas pipes of the reaction furnace and hindering the continuous production of silicon carbide whiskers for a long period of time. As a result of an earnest study to try to overcome such problems, we provide in a reaction furnace a heating region for uniformly heating the reaction starting material under a non-oxidation gas atmosphere and a cooling region on the down stream side thereby forcedly cooling the reaction product resulting from the heating reaction and the atmosphere in the furnace to deposit and collect the by-product vapors. Accordingly, by this process, since the vapors described above are not deposited in the exhaust gas pipes, silicon carbide whiskers can be produced stably for a long period of time continuously. Then, the reaction products are allowed to cool as required, and preferably, excess carbon in the reaction product is oxidized to burn away and usually linear silicon carbide whiskers are obtained. In a process according to the present invention, silicon carbide whiskers containing silicon dioxide impurity of less than 5% by weight can be obtained by forming silicon carbide whiskers at a predetermined temperature as described above, then recovering the reaction product, heating the product in a furnace at a temperature lower than 1,100°C, preferably, lower than 700°C, to oxidize and burn off the unreacted carbon starting material. In this way, in a process according to the present invention, silicon carbide whiskers can be obtained generally at a yield higher than 90% based on silicon gasified from the silicon-containing starting material, and further, the silicon carbide whiskers are linear with no bends, and have a long fiber length and high aspect ratio. Furthermore, since the silicon carbide whiskers are of high purity with the content of the silicon dioxide impurity usually of lower than 5%, they can be used for usual application uses with no particular purification. However, if required, they may be purified by a purifying treatment of dipping them into fluoric acid, maintained at room temperature or heated to 70 - 80°C, thereby dissolving and washing out with water the impurities other than silicon carbide. Further in a process according to the present invention, where a reaction promoter is used, silicon carbide whiskers of high purity can be obtained at a high yield. Further, when comparing the fiber diameter, fiber length and aspect ratio of the whiskers, they were from 0.5 to 1 µm, from 50 to 500 µm and from 100 to 500 respectively in the case of not using the reaction promoter, whereas they were from 0.1 to 0.5 µm, from 50 to 400 µm and from 500 to 800 respectively in a process according to the present invention. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS: The present invention will now be described while referring to examples and comparative examples but it should be noted that the present invention is not restricted only to these examples. Example 1 A reaction vessel made of mullite (50% silica and 50% aluminum) substantially of a cylindrical shape having an outer diameter of 25 mm, an inner diameter of 20 mm and a length of 120 mm closed at one end, and equipped with a hydrogen charging port and an exhaust gas exit was used as a silicon dioxide-containing molded product. 2.5 g of carbon black incorporated with 0.5% by weight of ferric oxide was charged in the reaction vessel, which was then inserted into a tubular electric furnace. The temperature of the electric furnace was increased while passing a hydrogen gas at a rate of 100 ml/min therethrough, and after maintaining the temperature at 1,500°C for 4 hours, the temperature was lowered. Meanwhile, the hydrogen concentration of the gas from the exhaust gas exit of the electric furnace was 92%. Then, the reaction vessel was removed from the electric furnace, silicon carbide whiskers deposited to the inside of the reactor were removed and unreacted carbon black was burnt and removed to obtain 2.5 g of linear silicon carbide whiskers with no bends. Example 2 The silicon dioxide-containing molded product and carbon black were heated to react by the same procedures as in Example 1 except for passing a gas mixture comprising 80% of hydrogen and 20% of argon into the electric furnace. In the course of the reaction, the hydrogen concentation of the gas from the exhaust gas exit of the electric furnace was 75%. By the process, 2.0g of linear silicon carbide whiskers with no bends were obtained. However, the fiber length was somewhat shorter as compared with the silicon carbide whiskers obtained in Example 1. Comparative Example 1. Silicon dioxide-containing molded product and carbon black were heated to react by the same procedures as in Example 1 except for passing a gas mixture comprising 60% of hydrogen and 40% of argon into the electric furnace. In the course of the reaction, the hydrogen concentration of the gas from the exhaust gas exit of the electric furnace was 58%. This procedure provided only 0.2 g of silicon carbide whiskers containing powdery material, having finer diameter and a fiber length as short as about 1/10 as compared with that in Example 1 and 2. Comparative Example 2 Silicon dioxide-containing molded product and carbon black were heated to react in the same procedures as in Example 1 except for passing argon into the electric furnace. According to this method, since only the carbon black in contact with the reaction vessel concerns the reaction, only 0.1 g of silicon carbide whiskers were obtained. Further, the silicon carbide whiskers were in a powdery or bulky form and they scarcely included the acicular form. Example 3 Quartz powder with an average particle size from 5 to 10 µm and elementary silicon powder with an average particle size from 10 to 20 µm were used as the starting material and they were weighed, metered and mixed such that the SiO₂/Si molar ratio was 4/1. On the other hand, hydroxy propylcellulose was dissolved in dichloromethane to prepare a viscous solution. Then, the solution containing the solid content corresponding to 5% of the total solid used for the molding was poured into the mixing powder to form a paste, which was then air-dried to remove the solvent. Then, a die of 7 × 15 × 70 mm was filled, with the mixture subjected to pressure-molding at room temperature at a pressure of 0.5 t/cm² to obtain a square post-like solid molded product. 20 g of silicon starting material was contained in the square post-like molded product. The bending strength of the product at room temperature was 15 kg/cm². The starting material in the form of the molded product was inserted into a cylinder made of graphite with 40 mm inner diameter, 5 mm wall thickness and 100 mm length, one of the openings of which was closed with a graphite cap and 7.5 g of carbon black (V - XC - 72R : manufactured by Cabbot) admixed with 0.093 g of powdery CoCl₂6H₂O as a catalyst was inserted to fill the inner space and the opening on the side of the insertion was closed with carbon fiber felts. The thus manufactured reaction vessel was inserted into the central portion of a tubular reactor made of aluminum having 65 mm outer diameter, 60 mm inner diameter and 1,000 mm length, which was further inserted into an electric furnace. Then after introducing nitrogen gas for one hour at a flow rate of 5 ml/min per unit cross sectional area (cm²) of the tubular furnace reactor, the temperature was increased at a rate of 5°C/min, and after the temperature at the central portion of the furnace reached 1,000°C, introduction of the nitrogen gas to the electric furnace was interrupted. Then, the temperature at the center in the tube was increased to 1,530°C while introducing a hydrogen gas into the tubular reactor at a flow rate of 5 ml/min-cm² (tubular reactor cross sectional area) and then maintained at that temperature for 4 hours. Then, the temperature in the furnace was gradually decreased and the introduction of the hydrogen gas interrupted. Then, after switching the furnace atmosphere to the nitrogen gas, the contents of the furnace were removed. The content taken out from the graphite cylinder was a dark green moss-like lump in which the solid molded product used as the starting material remained in a sintered and shrunken state with a gap from the lump product. To remove the unreacted carbon black from the reaction product, they were sintered for 4 hours in a furnace at an internal temperature of 700°C to obtain 6.6 g of silicon carbide whiskers. In this case, the reduction in the weight of the solid molded product was 9.03 g. Accordingly, the yield of silicon carbide whiskers based on silicon vaporized from the solid molding product was 95% and silicon dioxide as the impurity content was 5%. Using x-ray diffraction, the thus obtained silicon carbide whiskers showed a pattern only for β-SiC, and had an acicular shape with no bending and branches and the fiber diameter, fiber length and aspect ratio were, respectively, from 0.1 to 0.5 µm, from 50 to 400 µm and from 500 to 800. The presence of powdery silicon carbide and other impurities was not recognized at all. Comparative Example 3 20g of a powdery mixture using identical quartz powder and metal silicon powder in Example 3 was weighed so as to contain SiO₂/Si molar ratio of 4/1 and inserted and charged into the same cylinder made of graphite as used in Example 3. Then, 7.5 g of carbon black containing the same amount of the catalyst as used in Example 3 was covered over the charged mixed powder and the reaction was carried out under the same conditions in Example 3 and the content was removed after cooling as the furnace. The content was dark green moss-like lump, but since it was integrated with the powder mixture used for the starting material at the bottom, most of the starting powdery material was separated by beating. However, they could not be separated completely but some of them were contained to the lump of whiskers. Further, some of fine pseudo whiskers approximate in the shape to a powdery form fell together with the separated powder. Then, the content separated from the starting powder was subjected to baking treatment to remove unreacted carbon black in the same furnace as in Example 3 to obtain 5.2 g of silicon carbide whiskers. The content of the silicon dioxide as the impurity was 12%, while the yield of the silicon carbide whiskers was 35% based on 20 g of the starting material used. The resultant silicon carbide whiskers were remarkably mixed with bending and branches, were not of simple acicular shape and contained a great amount of powdery particles mixed therein. When measuring the fiber diameter, fiber length and aspect ratio for the whiskers most closely of the acicular shape, they were 1 - 3 µm, 10 - 39 µm and 10 - 50 respectively. Example 4 Four molding plates each of 120 mm length, 40 mm width were disposed to make a hollow box containing 95% by weight of silicon dioxide were disposed in a box-like reaction vessel made of very pure carbon with the inner longitudinal and lateral size each of 130 mm and a depth of 50 mm. Then a uniform mixture comprising 40 g of carbon black having the properties shown in Table 1 and 0.28 g of nickel oxide as a catalyst was charged into the gap in the reaction vessel. The reaction vessel was capped with a lid made of very pure carbon at the upper opening thereof and inserted into a reaction furnace. Then, the temperature was increased under a hydrogen gas atmosphere from room temperature to 1,530°C for 6 hours, maintained at that temperature for 4 hours and allowed to cool to room temperature. After removing the molding plates as the reaction residue from the reaction vessel, the contents were collected and burnt in air at a temperature of 600°C for 4 hours to remove unreacted carbon black, thereby obtaining pale green β-silicon carbide whiskers in each cases. Table 1 shows the yield of the resultant silicon carbide whiskers, amount of granular materials, and the diameter and length. As can be seen from the result, by using carbon black having predetermined properties in accordance with the process of the present invention, it was possible to obtain a high yield of silicon carbide whiskers of high acicularity. On the contrary, according to the comparative example, the granular materials were formed in a great amount, the yield was low, and further, it took a long period of time to burn the unreacted carbon black. Carbon Black SiC Whisker BET specific surface area (m²/g) Average grain size (nm) Bulk density (g/cm 3) SiC amount (g) Granular material (%) Diameter (µm) Length (µm) A 265 18 0.12 23.5 < 5 0.2-2 40-200 B 254 30 0.10 24.9 < 5 0.2-2 40-200 C 220 16 0.13 24.0 < 5 0.2-2 40-200 D 135 20 0.13 22.3 < 5 0.3-2.5 40-200 E 134 22 0.18 20.9 < 5 0.3-2.5 40-200 F 250 16 0.23 20.9 20-40 0.2-5 40-200 G 100 22 0.32 17.6 30-60 0.2-5 20-200 H 61 42 0.03 23.1 40-60 0.2-5 < 50 I 30 51 0.26 19.6 30-60 0.2-5 < 60 J 26 72 0.12 18.1 20-40 0.2-5 < 50 Example 5 A tray pusher type heating furnace equipped with a heating zone and a cooling zone was used as the manufacturing apparatus and silicon carbide whiskers were produced continuously by passing hydrogen gas in parallel with the direction of movement of the reaction starting material in the furnace reactor and supplying a cooling nitrogen gas to the cooling zone while setting the temperature in the heating zone at 1,600°C. That is, carbon-containing starting material with the specific surface area of 250 m²/g, average grain size of 14 nm and bulk density of 0.19 g/cm³ and a small amount of nickel oxide as the catalyst were charged into the reaction vessel. Then, continuous operation was conducted for one month under the condition of passing the starting reaction material through the heating zone in a 95% hydrogen/5% nitrogen atmosphere at a temperature of 1,600°C for 2 hours, and thereafter, passing the material to a cooling zone where it was cooled by nitrogen gas. Meanwhile, upon observing the inside of the reactor furnace through a view window formed to the furnace wall of the cooling zone, although deposits were recognized on the furnace wall of the cooling zone, no substantial deposition was recognized in the exhaust gas pipe, and continuous stable operation could be maintained. Further, the thus obtained silicon carbide whiskers contained less than 2% of hydrofluoric acid-soluble component and the shape was acicular with high aspect ratio.

Claims: A process for producing silicon carbide whiskers by reacting under heat in a reaction vessel solid silicon-containing starting material which has been previously molded into a predetermined shape and carbon-containing starting material, characterised in that the molded silicon containing starting material comprises substantially only silicon and silicon dioxide, and the carbon-containing material is provided as a carbon powder placed adjacent the molded silicon containing material and the materials are heated together to a temperature from 1400°C to 1700°C in an atmosphere of not less than 70% hydrogen concentration. A process for producing silicon carbide whiskers as defined in Claim 1, characterised in that the silicon-containing molded material and the carbon-containing starting material are heated in the presence of a catalyst. A process for producing silicon carbide whiskers as defined in Claims 1 or 2, characterised in that the silicon-containing molded material and the carbon-containing starting material are heated in the presence of a catalyst and a reaction promoter. A process as defined in Claim 3 characterised in that said reaction promoter comprises an alkali metal or an alkaline earth metal halide. Apparatus as defined in Claim 4, characterised in that said halide is a fluoride or chloride. Apparatus as defined in Claim 5, characterised in that said promoter comprises the list lithium chloride, sodium chloride, potassium chloride, calcium chloride, magnesium chloride, lithium fluoride, sodium fluoride and potassium fluoride. A process for producing silicon carbide whiskers, as defined in any of Claims 1 - 6 characterised in that silicon carbide whiskers are continuously produced by heating the reaction components while transporting them through a furnace reactor, and forcibly cooling the vapors to deposit and collect them in a cooling zone disposed at the exit of the furnace reactor. A process as defined in any of Claims 1 to 6, characterised in that said molded silicon containing material forms the reaction vessel and said carbon powder is placed in said reaction vessel. A process for producing silicon carbide whiskers as defined in any one of Claims 1 to 8, characterised in that the silicon carbide whiskers formed are further heated to a temperature lower than 700°C thereby burning off unreacted carbon. A process for producing silicon carbide whiskers as defined in any one of Claims 1 to 9, characterised in that the silicon-containing starting material is a granular molded product. A process for producing silicon carbide whiskers as defined in any of Claims 1 to 10, characterised in that the silicon-containing starting material is a molded product prepared by mixing and molding a silicon dioxide powder and a metal silicon powder at a predetermined ratio. A process for producing silicon carbide whiskers as defined in Claim 11, characterised in that the molding product of the powdery silicon dioxide and the powdery metal silicon comprise silicon dioxide and metal silicon within a range from 0.5 : 1 to 10 : 1 in molar ratio. A process for producing silicon carbide whiskers as defined in any one of Claims 1 to 12, characterised in that the powdery carbon starting material comprises carbon black or powdery activated carbon. A process for producing silicon carbide whiskers as defined in Claim 13, characterised in that the carbon black has such physical properties as comprising more than 100 m²/g of BET specific surface area, less than 35 nm of average grain size and from 0.06 to 0.2 g/cm³ of bulk density. A process for producing silicon carbide whiskers as defined in any preceding claim, as dependent upon Claim 2, characterised in that said catalyst is mixed together with the carbon powder. A process for producing silicon carbide whiskers as defined in Claim 15, characterised in that the catalyst comprises iron, nickel, cobalt or their compound.

Inventors: HABATA, HIDETSUGU, KAJI, KICHIRO, KIMURA, ISAO, SAIKI, KOZO, SHIMASHAKI, KATSUNORI, SUZUKI, TETSUO, YAMAMOTO, MASAKAZU, YURA, KEITA
Applicants: KABUSHIKI KAISHA KOBE SEIKO SHO, KANEBO KABUSHIKI KAISHA
Application year: 1987
Main classification: C30B25
IPC codes: C30B25