Method of manufacturing photomask and photo-mask manufactured thereby

Abstract: A method of manufacturing a photo-mask, which includes the steps of applying a resist film (3) onto a substrate (1) of quartz, glass and the like, subjecting the resist film (3) to light exposure and development to form a fine resist pattern (4), etching the mask substrate (1) covered by the fine resist pattern (4) so as to cause a non-light transmitting thin film (2) of Cr, Ta, etc. to adhere thereon by vapor deposition, sputtering and the like, and removing the thin film (2) on the resist pattern (4) together with the resist film (3), thereby to form the photo-mask. The disclosure is also directed to a photo-mask manufactured by the above method.

Description: The present invention generally relates to a photo-mask and more particularly, to a method of manufacturing a photo-mask to be employed for a pattern exposure process (lithography) in a production line of an optical disc, and a photo-mask produced by said manufacturing method. Commonly, a photo-mask has been employed for the formation of a pattern on an optical disc by a light exposure system. The conventional manufacturing process for such a photo-mask generally includes manufacturing steps as shown, for example, in Figs. 10(a) to 10(e). More specifically, at a step in Fig. 10(a), a non-light transmitting film 2 of Cr or the like is formed on a mask substrate 1 by vapor deposition, sputtering, etc., and then, at a step in Fig. 10(b), a resist film 3 is applied onto said thin film 2. Thereafter, by subjecting said resist film 3 to exposure and development, a resist pattern 4 is formed (Fig. 10(c)). Subsequently, the thin film 2 is subjected to etching (Fig. 10(d)), and finally, the resist film 3 is removed, thereby to form the photo-mask having a mask pattern 5 (Fig. 10(e)). The photo-mask manufactured by the conventional method as described above, however, has such a disadvantage that various faults tend to be formed therein, since separation of the mask pattern takes place in a cleaning process and the like. Furthermore, owing to the recent tendency toward recording at a higher density, the mask-pattern has been required to be finer, and thus, it has become necessary to solve the defect in the conventional method as referred to above. Patent abstracts of Japan, Vol. 7, No. 60, (P-182)-[1205], 12. März 1983 and JP-A-57 207 256 (FUJITSU K.K.) 18.12.1982 refers to a photo-mask to permit contact exposure with good accuracy by providing recesses of a prescribed pattern on the surface of a light-transmittable substrate, and bearing light-shieldable films in the recesses. A glass substrate is etched by as much as the depth of the size corresponding to the thickness of a metallic film to be formed on the substrate, whereby recesses of a prescribed pattern are formed on a substrate. A metallic film consisting of chromium is deposited by vapor deposition or the like over the entire surface of the substrate. Here, surface layer of the film of chromium is formed partly of chromium oxide in order to prevent reflection. Thereafter, the photo resist films patterning the substrate are removed and the metallic films thereon are removed together. The photo-mask having metallic films in the recesses of the glass substrate is obtained. Accordingly, an essential object of the present invention is to provide a method of manufacturing a highly reliable photo-mask with a long life and not readily subjected to such a defect as separation of a mask-pattern, etc., with substantial elimination of disadvantages inherent in the conventional manufacturing methods of this kind. Another important object of the present invention is to provide a superior photo-mask produced by the manufacturing method as referred to above. In accomplishing these and other objects, according to one aspect of the present invention, there is provided a novel method of manufacturing a photo-mask, according to claim 1. Preferred embodiments can be found in the dependent claims. Thus the present invention provides a method of manufacturing a photo-mask, which comprises the steps of isotropic etching proceeding a dry etching process. In the photo-mask according to the present invention as described above, grooves are formed in the mask substrate so as to form the mask-pattern therein. Such grooves for the mask pattern are formed by the dry etching process. The resist pattern for the mask pattern is formed on the first thin film having the nature in which the isotropic etching proceeds in the dry etching process. Accordingly, the first thin film is formed with side etching in the dry etching process, and therefore, the resist film, etc. may be readily removed to provide a high accuracy for the mask pattern. Since the manufacturing method of the photo-mask according to the present invention may be effected through utilization of the conventional photo-mask manufacturing technique, there is such an advantage that it can be readily put into actual application, with less requirements for new installation and facilities. In another aspect of the present invention, there is provided the novel photo-mask which includes a substrate of quartz, glass, etc., and an opaque metal layer such as Ta, Cr and the like filled in a groove means formed by removing part of said substrate, with the surface of said metal layer being formed to be generally flush with the surface of said substrate. These and other objects and features of the present invention will become apparent from the following description taken in conjunction with the preferred embodiments thereof with reference to the accompanying drawings, in which: Figs. 1(a) to 1(c) are fragmentary side sectional views of photo-masks prepared by the method of the present invention; Figs. 2(a) to 2(f) are schematic sectional diagrams showing manufacturing steps of a photo-mask according to a first embodiment of the present invention; Figs. 3(a), 3(b) and 3(c) are fragmentary side sectional views showing the configuration of a groove in the course of manufacturing the photo-mask; Fig. 4 is a fragmentary side sectional view of the photo-mask produced by the method of Figs. 2(a) to 2(f); Figs. 5(a) to 5(f) are schematic sectional diagrams showing manufacturing steps of a photo-mask according to a second embodiment of the present invention; Figs. 6(a) and 6(b) are fragmentary side sectional views each showing the configuration of a groove in the course of manufacturing the photo-mask; Fig. 7 is a fragmentary side sectional view of the photo-mask produced by the method of Figs. 5(a) to 5(f); Figs. 8(a) to 8(g) are schematic sectional diagrams showing manufacturing steps of a photo-mask according to a third embodiment of the present invention; Figs. 9(a) and 9(b) are fragmentary side sectional views showing constructions of other photo-masks to be prepared by the manufacturing method of the present invention; Figs. 10(a) to 10(e) are schematic sectional diagrams showing manufacturing steps of a conventional photo-mask (already referred to); and Fig. 11 is a fragmentary side sectional view of the conventional photo-mask. DETAILED DESCRIPTION OF THE INVENTION Before the description of the present invention proceeds, it is to be noted that like parts are designated by like reference numerals throughout the accompanying drawings. For comparison, Figs. 1(a), 1(b) and 1(c) show fragmentary cross sections of the photo-masks produced by the method of the present invention, while Fig. 11 represents the fragmentary cross section of a photo-mask produced by a conventional manufacturing method given in Fig. 10. In the conventional photo-mask in Fig. 11, the contact face F of the photo-mask with respect to an external object (not shown) is on the upper surface of the mask pattern 5, which is directly affected by an external force due to washing, etc., and therefore, such mask pattern 5 may be undesirably separated partly. On the other hand, with respect to the photo-masks prepared by the method of the present invention, in the case of the photo-mask shown in Fig. 1(a), the contact face F with the external object is located on the surface of the mask substrate 1, and accordingly, the external force due to washing, etc. is absorbed into the surface of said substrate, and since the surface of the mask pattern 5 is slightly lower than the surface of the mask substrate 1, said mask pattern 5 is not readily separated. In the case of Fig. 1(b), the surface of the mask pattern 5 is adapted to coincide with the surface of the mask substrate 1, and thus, the external force uniformly affects both surfaces of the substrate 1 and the mask pattern 5, and therefore, separation of the mask pattern 5 does not easily occur similarly as in the case of Fig. 1(a). Meanwhile, in the arrangement of Fig. 1(c), the contact face F with respect to the external object is located slightly above the mask pattern 5. However, since the mask pattern 5 is arranged to be partly embedded in the mask substrate 1, it is extremely difficult to be separated as compared with that in the conventional photo-mask in Fig. 11. Figs. 2(a) to 2(f) show a method of manufacturing a photo-mask according to a third embodiment of the present invention in the order of manufacturing steps as given below. Step (a) A resist film 3 is applied onto a mask substrate 1 made of quartz, glass or the like (Fig. 2(a)). Step (b) The resist film 3 is subjected to light exposure through employment of an electron beam or laser light so as to form a resist pattern 4 through a developing process (Fig. 2(b)). Step (c) In the state as covered by the resist pattern 4, the mask substrate 1 is subjected to anisotropic etching by dry etching at portions not covered by the resist film (Fig. 2(c)). Step (d) After completion of the above dry etching, wet etching is effected, the isotropic etching of the mask substrate 1 is effected (Fig. 2(d)). Step (e) After completion of the above dry etching and wet etching, and in the state as covered by the resist pattern 4, a thin film 2 of Cr, Ta or the like not transmitting light such as ultraviolet rays, etc. therethrough is caused to adhere thereonto by vapor deposition, sputtering or the like (Fig. 2(e)). Step (f) Finally, the light-shielding thin film 2 adhering onto the resist pattern 4 is separated together with the resist pattern 4, thereby to form the photo-mask having a mask pattern 5 (Fig. 2(f)). Figs. 3(a), 3(b) and 3(c) respectively show fragmentary cross sections of photo-masks prepared by applying the light-shielding thin films 2 of Cr, Ta or the like, after forming grooves on the photo-mask substrates by various etching methods. The photo-mask of Fig. 3(a) shows the state where the groove is formed only by the dry etching for comparison. Since the dry etching is anisotropic etching, the mask pattern 5 may be formed in high accuracy. However, due to the fact that the groove side walls become generally perpendicular, the light-shielding thin film 2 undesirably covers the pattern side wall portions W, thus making it difficult to separate the light-shielding thin film 2 adhering to the resist portion 3. Meanwhile, the photo-mask of Fig. 3(b) represents the state where the groove is made only by the wet etching for comparison. Since the wet etching is the isotropic etching, the side etching portions S are formed. In this case, the thin film 2 becomes discontinuous at the side etching portions S, and therefore, the thin film 2 adhering to the resist portion may be readily separated. However, there is such a problem that the dimensional accuracy of the mask pattern 5 tends to be deteriorated by the side etching. The photo-mask of Fig. 3(c) is directly related to the present invention, and shows the state where the groove is formed by first effecting the dry etching, with subsequent wet etching. By the first dry etching, the dimensional accuracy of the mask pattern 5 is ensured, and by effecting the subsequent wet etching to form the side etching portions S to a certain extent, separation of the light-shielding thin film 2 adhering to the resist portion can be facilitated. Fig. 4 shows a fragmentary side sectional view of the photo-mask prepared by the method of the present invention. In this photo-mask, the contact face F with respect to the external object is also present on the surface of the mask substrate 1, and thus, external force due to washing, etc. is absorbed into the surface of the mask substrate. Therefore, the mask pattern 5 becomes very difficult to be separated in the similar manner as in the previous embodiments. Shown in Figs. 5(a) through 5(f) is a method of manufacturing a photo-mask according to a second embodiment of the present invention as sequentially illustrated in the order of manufacturing steps as follows. Step (a') Onto a light-transmitting mask substrate 1 made of quartz, glass or the like, a thin film 6B (e.g., Si, Mo, Si₃N₄, etc.) having a nature in which isotropic etching proceeds in a dry etching process, is caused to adhere by vapor deposition, sputtering, etc. (Fig. 5(a)). Step (a'') After application of the above thin film 6B, a resist film 3 is further applied thereon (Fig. 5(b)). Step (b) The resist film 3 is subjected to light exposure through employment of an electron beam or laser light so as to form a resist pattern 4 through a developing process (Fig. 5(c)). Step (c and d) In the state as covered by the resist pattern 4, the thin film 6B is subjected to dry etching to form grooves g in said resist pattern (Fig. 5(d)). Here, since isotropic etching proceeds in the thin film 6B, side etching portions S are formed, while anisotropic etching proceeds in the mask substrate 1 of quartz, glass, etc., and thus, no side etching takes place. Step (e) Subsequently, the state as covered by the resist pattern 4, a thin film 2B of Cr, Ta or the like not transmitting light such as ultraviolet rays, etc. therethrough is caused to adhere thereonto by vapor deposition, sputtering or the like (Fig. 5(e)). Step (f) Finally, the thin film 2B adhering onto the resist pattern 4 is separated together with the resist pattern 4, and thereafter, the thin film 6B is removed or said thin film 6B is separated together with the resist film 3, thereby to form the photo-mask having a mask pattern 5 (Fig. 5(f)). Figs. 6(a) and 6(b) respectively show fragmentary cross sections of photo-masks, with the thin films 2B of Cr, Ta, etc. applied thereto, in the case where the grooves g are formed without providing the thin film 6B, and also, in the case where the grooves g are formed by providing the thin film 6B. In Fig. 6(a) representing the case without the thin film 6B, since the anisotropic etching proceeds in the mask substrate of quartz, glass and the like at step (c and d), the thin film 2B undesirably covers the side wall portions W, and it becomes difficult to separate the thin film 2B adhering to the resist portion for comparison. In Fig. 6(b) showing the case where the thin film 6B is provided, although the anisotropic etching proceeds in the mask substrate of quartz, glass or the like at step (c and d), the isotropic etching proceeds in the thin film 6B, and thus, the side etching portions S are formed. Therefore, upon application of the thin film 2B, discontinuous portions are formed at the side etching portions S, and thus, the thin film 2B at the resist pattern 4 may be readily separated by the separation of the resist film 3 or removal of the thin film 6B. Meanwhile, since the anisotropic etching proceeds in the mask substrate 1, the mask pattern 5 can be formed at high dimensional accuracy. Fig. 7 shows a fragmentary cross section of a photo-mask prepared by the method of the present invention as described above. In this case also, since the contact face F with respect to the external object is located at the upper surface of the mask substrate 1, external force due to washing and the like is absorbed into the surface of said substrate, and the mask pattern 5 becomes very difficult to be separated. By the above embodiment of the present invention, a highly reliable photo-mask with a long life and having the mask pattern not readily separated can be presented. Referring further to Figs. 8(a) to 8(g), there is shown, in the order of manufacturing steps, a method of manufacturing a photo-mask according to a third embodiment of the present invention as follows. In the first place, as shown in Fig. 8(a), positive type photo-resist is applied onto a flat plate-like light-transmitting substrate 1 made of quartz, glass or the like by a spin-coat process, etc., so as to form a light-sensitive film 4C thereon. Subsequently, the resist film 4C is subjected to light exposure through employment of an electron beam, laser light or the like to form a desired fine pattern through a developing process, thereby to obtain a resist film 4C' at the remaining necessary portion (Fig. 8(b)). Then, by effecting anisotropic etching based on dry etching or the like, grooves g are formed in the light-transmitting mask substrate 1 at portions not covered by the resist film 4C' (Fig. 8(c)). Thereafter, as shown in Fig. 8(d), the resist film 4C' is removed by ashing, etc. Further, a light-shielding material layer 2C is formed by causing Cr, Ta or the like to adhere onto the light-transmitting mask substrate 1 through vapor deposition, sputtering, etc. In this embodiment, the thickness t of the light-shielding layer 2C is arranged to be larger than the depth d of the groove g. The surface of the light-shielding material layer 2C has the undulation or concave and convex portions corresponding to the undulation of the substrate 1. Subsequently, through application thereonto, a material having etching rate of the same degree as that of the light-shielding layer 2C, for example, positive type photo-resist, by the spin-coat process, etc., a height supplementing layer H of a uniform height is formed on the light shielding material layer 2C (Fig. 8(f)). Finally, when the etching of the height supplementing layer H and light-shielding material layer 2C are effected by the dry etching, etc., both of these layers H and 2C are removed by maintaining the uniform height, since they are equal in the etching rate, and if this processing is continued for a proper time, the surface of the mask substrate 1 is exposed, with the light-shielding layer 2C' remaining in the grooves g as shown in Fig. 8(g), and thus, the photo-mask 10 according to the present invention may be obtained. As will be understood by Fig. 8(g), in the above photo-mask 10, since the light-shielding material layer 2C' is located in the groove g without protruding from the surface of the light-transmitting mask substrate 1, such layer 2C' is free from separation even if an external force is applied thereto by washing, etc. Figs. 9(a) and 9(b) show modified photo-masks to be obtained by the manufacturing method of the present invention. In the photo-mask 11 shown in Fig. 9(a), the surface of the light-shielding material layer 2D is located, in height, lower than the surface of the light-transmitting mask substrate 1. Such photo-mask 11 may be prepared by making the etching rate of the height supplementing layer H to be larger than that of the light-shielding material layer 2C in the step of Fig. 8(f) Meanwhile, the photo-mask 12 as shown in Fig. 9(b) may be produced by making the thickness t of the light-shielding material layer 2C to be smaller than the depth d of the groove g for the light-transmitting mask substrate 1 at the step of Fig. 8(e). For a further modification of the photo-mask according to the present invention, there may be raised a photo-mask produced in such a manner as to be processed into the state of Fig. 8(g) by polishing, without passing through the step of Fig. 8(f), after the step of Fig. 12(e). By the above method of the present invention, a highly reliable photo-mask with a long life and free from separation of the mask pattern can be advantageously provided. Furthermore, according to the manufacturing method of the present invention, the edge shape of the mask pattern may be accurately formed, without inviting any problems such as faulty electrical conduction.

Claims: A method of manufacturing a photo-mask having a mask pattern (5) of a light-shielding thin film (2) formed in grooves on a mask substrate (1), which comprises the steps of: a) applying a resist film (3) onto said mask substrate (1), b) subjecting said resist film (3) to light exposure and development to form a resist pattern (4), c) subjecting said mask substrate (1) not covered by said resist pattern (4) to anisotropic etching so as to form grooves in a portion not covered by said resist pattern (4), d) subjecting said mask substrate (1) to isotropic etching so as to widen said grooves in said mask substrate (1), e) forming a light-shielding thin film (2) on said resist pattern (4), and f) removing said light-shielding thin film (2) together with said resist film (3). The method as defined in claim 1, wherein said substrate (1) comprises quartz or glass, said resist film (3) is subjected to light exposure of an electron beam or laser light, said substrate (1) is etched by a wet or dry etching method, said light shielding thin film (2) comprises Cr or Ta, and said thin film (2) is formed by vapor deposition or sputtering. The method as defined in claim 2, wherein the surface of said mask pattern (5) is arranged to be a) a contact surface (F) located above the surface of the mask substrate (1) or b) embedded in the mask substrate (1) with a contact surface (F) of the mask substrate (1) located above the surface of the mask pattern (5). The method as defined in claim 1, wherein said anisotropic etching comprises a dry etching method and said isotropic etching comprises a wet etching method. A method of maufacturing a photo-mask according to claim 1, which comprises the steps of: a') forming a first thin film (6B) on a mask substrate (1), a'') applying a resist film (3) on said first thin film (6B), b) subjecting said resist film (3) to light exposure and development to form a resist pattern (4); c') subjecting said first thin film (6B) to dry anisotropic etching so as to form grooves in a portion of said first thin film (6B) not covered by said resist pattern (4) d') subjecting said mask substrate (1) not covered by said resist pattern (4) to isotropic etching so as to widen said grooves in that portion not covered by said resist pattern (4), e') forming a second light-shielding thin film (2B) on said resist pattern (4) and f') removing said second light-shielding thin film (2B) formed on said resist pattern (4) together with said resist film (3) and said first thin film (6B). The method as defined in claim 5, wherein said first thin film (6B) and said second light-shielding thin film (2B) are formed by vapor deposition or sputtering, and wherein said second light-shielding thin film (2B) is formed so as to be discontinuous between said resist pattern (4) and said groove so as to facilitate removing said second thin film (2B) and said resist film (3). The method as defined in claim 6, wherein said mask substrate (1) comprises quartz or glass, said first thin film (6B) comprises Si, Mo, Si₃N₄, and said second light-shielding thin film (2B) comprises Cr or Ta. The method as defined in claim 7, wherein said mask pattern (5) is arranged to be embedded in the mask substrate (1) with a contact surface (F) of the mask substrate (1) located above the surface of the mask pattern (5). The method as defined in claim 5, wherein said anisotropic etching comprises a dry etching method, said isotropic etching comprises a wet etching method, and said second light-shielding thin film (2B) is formed by vapor deposition or sputtering. A photo mask having a substrate (1) and a mask pattern (5) obtainable by a process as defined in one or more of claims 1 to 9 wherein said mask pattern (5) is arranged to be a) a contact surface (F)located above the surface of the mask substrate (1) or b) embedded in the mask substrate (1) with a contact surface (F) of the mask substrate (1) located above the surface of the mask pattern (5).

Inventors: HIROKANE JUNJI, INUI TETSUYA, KATAYAMA HIROYUKI, MIEDA MICHINOBU, MIYAKE TOMOYUKI, OHTA KENJI, TAKAHASHI AKIRA, VAN KAZUO, WASHO JUNICHI, HIROKANE, JUNJI, INUI, TETSUYA, KATAYAMA, HIROYUKI, MIEDA, MICHINOBU, MIYAKE, TOMOYUKI, OHTA, KENJI, TAKAHASHI, AKIRA, VAN, KAZUO, WASHO, JUNICHI
Applicants: SHARP KK, SHARP KABUSHIKI KAISHA
Application year: 1987
Main classification: G03F1
IPC codes: G11B7, G03F1