PROCESS FOR MANUFACTURING CERAMICS FOR USE IN ELECTRONIC COMPONENTS

Abstract: In a process for manufacturing ceramics for use in electronic components, said ceramics comprising a polycrystalline substance in which each of grains (2) constituting said polycrystalline substance comprises a main phase (3) and a composite phase (4) surrounding said main phase (3) and composed of a component of said main phase (3) and a component other than that of said main phase (3), a metallic oxide powder is dispersed in a solution of a metal salt containing a metallic element component different from the component of said metallic oxide powder to deposit said metallic element component on the surface of said metallic oxide, and said metallic oxide having said metallic element component deposited on the surface thereof is then molded into a desired shape and thereafter fired.

Description: Detailed Description of the Invention: (Field of Industrial Applications) This invention relates to a process for manufacturing ceramics for use in electronic components such as dielectric ceramics, semiconductor ceramics of grain boundary insulation type, and capacitative varistors. (Prior Art) With respect to ceramics for use in electronic components, an application for patent (1) concurrently filed with this application for patent on the present invention proposes a dielectric ceramic comprising a polycrystalline substance in which each of grains constituting the polycrystalline substance comprises a dielectric main phase and a composite phase being composed of a component of the main phase and a component other than that of the main phase, having dielectric characteristics different from those of the main phase and surrounding the main phase, and another application for patent (2) also concurrently filed with this application for patent on the present invention proposes a semiconductor ceramic of grain boundary insulation type comprising a polycrystalline substance in which each of grains constituting said polycrystalline substance comprises a semiconductive oxide main phase and a dielectric oxide composite phase surrounding said main phase and composed of a component of said main phase and a component other than that of said main phase. (Problems to be Solved by the Invention) The development of a convenient process is demanded with respect to the ceramics for use in electronic components as proposed in the above-mentioned applications for patent, i.e., ceramics for use in electronic components comprising grains each having a double phase structure composed of a main phase and a composite phase surrounding the main phase. An object of the present invention is to provide a process for manufacturing ceramics for use in electronic components comprising grains each having the above-mentioned double phase structure which can attain the above-mentioned demand. (Means to Solve the Problems) The present invention relates to a process for manufacturing ceramics for use in electronic components comprising a polycrystalline substance in which each of grains constituting said polycrystalline substance comprises a main phase and a composite phase surrounding said main phase and composed of a component of said main phase and a component other than that of said main phase, which is characterized in that a metallic oxide powder is dispersed in a solution of a metal salt containing a metallic element component different from the component of said metallic oxide powder to deposit said metallic element component on the surface of said metallic oxide, and said metallic oxide having said metallic element component deposited on the surface thereof is then molded into a desired shape and thereafter fired. (EXAMPLES) The present invention will now be described by way of examples with reference to the accompanying drawings. The drawing shows a schematic view of a crystalline structure of a ceramic for use in electronic components manufactured according to the process of the present invention. In the drawing, numeral 1 designates a polycrystal constituting a ceramic for use in electronic components. Each grain 2 comprises a main phase 3 and a composite phase 4 surrounding the main phase. The composite phase 4 comprises a metallic oxide in the form of a solid solution composed of a component of the main phase and a component other than that of the main phase. In the drawing, numeral 5 designates a grain boundary phase present between the grains 2. In the case of the dielectric ceramic, the metallic phase of the main phase 3 comprises, e.g., a perovskite type oxide, ABO₃, such as (Ba, Sr, Ca) (Ti, Zr)O₃, BaSnO₃, Pb(Co 1/2 Nb 1/2 )O₃, Pb(Mn 1/2 W 1/2 )O₃ or Ba(Mg 1/3 Nb 2/3 )O₃, a tungsten bronze type oxide, AB₂O₆, such as CaNb₂O₆ or SrTa₂O₆, a pyrochlore type oxide, A₂B₂O₇, such as Nd₂Ti₂O₇ or MgNb₂O₇, a lamellar oxide such as Sr₂Bi₄Ti₅O₁₈ or PbBi₂Nb₂O₉, and an oxide of a single element, such as TiO₂, SnO₂ or ZnO. In the above-mentioned ABO₃ AB₂O₆, and A₂B₂O₇, A and B are each an element selected from among Mg, Ca, Sr, Ba, Ni, Cu, Zn, Pb, Bi, Ti, Zr, Nb, Ta, Cr, Mn, Fe, Co, Y, La, Ce, Pr, Nd, Sm, Dy, Aℓ, Si, W, Sn and Sb. On the other hand, in the case of the semiconductor ceramic of grain boundary insulation type, the metallic oxide of the main phase 3 comprises, e.g., an oxide containing at least one element selected from among Mg, Ca, Sr, Ba, Ni, Cu, Zn, Pb and Bi, and at least one element selcted from among Ti, Zr, Nb, Ta, Cr, Mn, Fe, Co, Y, La, Ce, Pr, Nd, Sm, Dy, Aℓ, Si, W, Sn and Sb, e.g., a perovskite type semiconductive oxide such as BaTiO₃, SrTiO₃, (Ba 1-x Sr x )TiO₃, (Sr 1-x Ca x ) TiO₃ or (Ba 1-x Ca x )TiO₃ and an oxide of a single element, such as TiO₂, SnO₂ or ZnO. With respect to the composite phase 4, the component other than that of the main phase 3 which constitutes the solid solution together with the component of the main phase 3 is selected from among Li, Na, K, Mg, Ca, Sr, Ba, Ni, Cu, Zn, Pb, Bi, Ti, etc. The grain boundary phase 5 is present in the form of a glassy matrix composed of an element selected from among Li, Na, K, Si, Mn, Cu, Aℓ, B, Mg, Ca, Sr, Ba, Ni, Zn, etc. A metallic oxide powder having a particle diameter of 0.1 to 10 µm is generally used as the raw material of the main phase 3. Examples of the metal salt containing a metallic element component different from the component of the metallic oxide powder include inorganic salts such as chlorides, nitrates, etc. of Li, Na, K, Mg, Ca, Sr, Ba, Ni, Cu Zn, Pb, Ti, etc. and organic salts. They are used in the form of an aqueous solution or an organic solution thereof. The concentrations of these solutions are generally adjusted to about 0.1 to 10%. The metallic oxide having a metal salt deposited on the surface thereof is obtained by either precipitating a solid component in a solution containing the metal salt and the metallic oxide each dispersed therein, or evaporating the solvent from the solution. Subsequent steps such as molding and firing can be conducted in the same manner as those of the conventional process. Therefore, the description on these steps will be omitted in this specification. More specific examples of the present invention will now be described together with comparative examples. EXAMPLE 1 Equimolar amounts of barium carbonate (BaCO₃) having a purity of 99.4% and titanium oxide (TiO₂) having a purity of 99.7%, i.e., 569.9 g of BaCO₃ and 230.1 g of TiO₂, were weighed out and subjected to wet mixing in a ball mill for 15 hr. The resulting mixture was dried and calcined at 1200°C for 2 hr to obtain a barium titanate (BaTiO₃) powder having an average particle diameter of 2.3 µm. Thereafter, 50 g of barium titanate BaTiO₃, 2.3 g of strontium nitrate [Sr(NO₃)₂], and 2.0 g of titanium oxynitrate [TiO(NO₃)₂] were weighed out so that the proportions of Sr(NO₃)₂ and TiO(NO₃)₂ were each 5 mol% based on 1 mol of BaTiO₃, and dissolved in 300 cm³ of water to prepare an aqueous solution. The solution was subjected to wet mixing in a ball mill for 10 hr and then spray-dried with a spray drier. The powder thus obtained was observed with a scanning transmission electron microscope. As a result, it was found that fine particles having a diameter of about 0.01 µm were deposited around the BaTiO₃ powder. Thereafter, 5% by weight of a PVA binder was added to this powder. The resulting mixture was pressure-molded into a disk having a diameter of 20 mm⊘ and a thickness of 1 mm. The disk was then fired at 1350°C for 2 hr to obtain a sinter. The sinter thus obtained was sliced and treated with an ion mill, followed by the examination of an elementary composition of the sinter with a scanning transmission electron microscope (STEM). As a result, it was found that the sinter comprised grains each composed of a main phase of BiTiO₃ and a composite phase composed of (Ba, Sr)TiO₃ and surrounding the main phase, and grain boundary phases present between these grains. Then, both surfaces of the sinter were coated with a silver paste, followed by baking, thereby manufacturing a ceramic capacitor. The obtained capacitor was subjected to the measurement of specific inductive capacity, εs, dielectric loss, tanσ, and insulation resistance IR. The results are shown in the following table. Further, the ceramic capacitor was put in a thermostatic chamber, followed by examination of changes in the capacitance at a temperature ranging from -25°C to +85°C. The maximum values with respect to the plus side and minus side of the rate of change (%) according to JIS C 5102 are shown in the following table. EXAMPLE 2 50 g of BaTiO₃ having an average particle diameter of 2.3 µm which had been prepared in the same manner as that of EXAMPLE 1, 2.9 g of strontium chloride (SrCℓ₂·6H₂O) and 2.0 g of titanium tetrachloride (TiCℓ₄) were weighed out so that the proportions of SrCl₂·6H₂O and TiCl₄ were each 5 mol% based on 1 mol of BaTiO₃, and dissolved in 300 cm³ of water to prepare an aqueous solution. The aqueous solution was subjected to wet mixing in a ball mill for 10 hr. 5 mol of aqueous ammonia was added to the resulting mixture, thereby precipitating fine particles of strontium and titanium on the BaTiO₃ powder. Then, the precipitates were filtered and dried to obtain a powder. The powder thus obtained was observed with a scanning transmission electron microscope. As a result, it was found that fine particles having a diameter of about 0.05 µm were deposited around the BaTiO₃ powder. Then, the powder was fired in the same manner as that of EXAMPLE 1 to obtain a sinter. An elementary composition of the sinter was examined in the same manner as that of EXAMPLE 1. As a result, it was found that the sinter comprised grains each composed of a main phase of BiTiO₃ and a composite phase composed of (Ba, Sr)TiO₃ and surrounding the main phase, and grain boundary phases present between these grains. Thereafter, in the same manner as that of EXAMPLE 1, both surfaces of the sinter were coated with a silver paste, followed by baking, thereby preparing a ceramic capacitor. The obtained capacitor was subjected to the measurement of specific inductive capacity, εs, etc. The results are shown in the following table. COMPARATIVE EXAMPLE 1 50 g of BaTiO₃ having an average particle diameter of 2.3 µm which had been prepared in the same manner as that of EXAMPLE 1, 1.6 g of strontium carbonate (SrCO₃) having an average particle diameter of 0.5 µm and 0.9 g of titanium oxide (TiO₂) were weighed out so that the proportions of SrCO₃ and TiO₂ were each 5 mol% based on 1 mol of BaTiO₃, and subjected to wet mixing in a ball mill for 15 hr, followed by drying to obtain a mixed powder. Then, the powder was fired in the same manner as that of EXAMPLE 1 to obtain a sinter. An elementary composition of the sinter was examined in the same manner as that of EXAMPLE 1. As a result, it was found that the sinter comprised grains each composed of only (Ba, Sr)TiO₃ in the form of a uniform solid solution comprising Ba, Sr, and Ti, and grain boundary phases present between these grains. Thereafter, in the same manner as that of EXAMPLE 1, both surfaces of the sinter were coated with a silver paste, followed by baking, thereby preparing a ceramic capacitor. The obtained capacitor was subjected to the measurement of specific inductive capacity, εs, etc, The results are shown in the following table. EXAMPLE 3 Zinc oxide (ZnO) having a purity of 99.9% was heat treated at 1250°C for 5 hr to obtain a semiconductive ZnO powder having an average particle diameter of 8 µm. Then, 59 g of ZnO powder thus obtained, 4.0 g of magnesium acetate [Mg(C₂H₃O₂)₂·4H₂O], and 8.7 g of isopropyl titanate [Ti(OC₃H₇)₄] were weighed out so that the proportions of Mg(C₂H₃O₂)₂·4H₂O and Ti(OC₃H₇)₄ were respectively 3 mol% and 5 mol% based on 1 mol of ZnO, and dissolved in 300 cm³ of ethanol to prepare an ethanol solution. The ethanol solution was subjected to wet mixing a ball mill for 10 hr. The resulting mixture was boiled to dryness in a stainless steel vessel to obtain powder. The powder thus obtained was observed with a scanning transmission electron microscope. As a result, it was found that fine particles having a diameter of about 0.05 µm were deposited around the ZnO powder. A sinter was prepared from this powder in the same manner as that of EXAMPLE 1, except that the firing was conducted at 1300°C. An elementary composition of the sinter thus obtained was examined in the same manner as that of EXAMPLE 1. As a result, it was found that the sinter comprised grains each composed of a main phase of ZnO and a composite phase composed of (Zn, Mg)TiO₃ and surrounding the main phase, and grain boundary phases present between these grains. Thereafter, both surfaces of the sinter were coated with a silver paste, followed by baking, thereby preparing a semiconductor ceramic of grain boundary insulation type. The specific inductive capcity, εs, etc, of the semiconductor ceramic was measured in the same manner as that of EXAMPLE 1. The results are shown in the following table. EXAMPLE 4 50 g of ZnO powder having an average particle diameter of 8µm which had been prepared in the same manner as that of EXAMPLE 3, 1.8 g of magnesium chloride (MgCℓ₂), and 5.8 g of titanium tetrachloride (TiCℓ₄) were weighed out so that the proportions of MgCℓ₂ and TiCℓ₄ were respectively 3 mol% and 5 mol% based on 1 mol of ZnO, and dissolved in 300 cm³ of water to prepare an aqueous solution. The aqueous solution was subjected to wet mixing in a ball mill for 10 hr, followed by spray drying with a spray dryer, thereby obtaining a powder. The powder thus obtained was observed with a scanning electron microscope. As a result, it was found that fine particles having a diameter of about 0.01 µm were deposited around the ZnO powder. Then, the powder was fired in the same manner as that of EXAMPLE 3 to obtain a sinter, followed by examination of an elementary composition of the sinter. As a result, it was found that the sinter comprised grains each composed of a main phase of ZnO and a composite phase composed of (Zn, Mg)TiO₃ and surrounding the main phase, and grain boundary phases present between these grains. Thereafter, a semiconductor of grain boundary insulation type was prepared in the same manner as that of EXAMPLE 3 and subjected to the measurement of specific inductive capacity, εs, etc. The results are shown in the following table. COMPARATIVE EXAMPLE 2 50 g of ZnO powder having an average particle diameter of 8 µm which had been prepared in the same manner as that of EXAMPLE 3, 0.7 g of magnesium oxide (MgO) having an average particle diameter of 0.7 µm, and 2.5 g of titanium oxide (TiO₂) having an average particle diameter of 0.3 µm were weighed out so that the proportions of MgO and TiO₂ were respectively 3 mol% and 5 mol% based on 1 mol of ZnO, and subjected to wet mixing in a ball mill for 15 hr. The resulting mixture was dried to obtain a powder. Then, the powder was fired in the same manner as that of EXAMPLE 3 to obtain a sinter, followed by examination of an elementary composition of the sinter. As a result, it was found that the sinter comprised grains each having a single phase structure comprising a homogeneous solid solution composed of ZnO, MgO, and TiO₂, and grain boundary phases present between these grains. Thereafter, in the same manner as that of EXAMPLE 3 both surfaces of the sinter were coated with silver by baking to prepare a sample. The sample was subjected to the measurement of specific inductive capacity, εs, etc. The results are shown in the following table. As can be seen from the table, the dielectric ceramics and semiconductor ceramics of grain boundary insulation type each for use in capacitors prepared in EXAMPLE 1 to 4 had excellent various characteristics suitable for use in capacitors. (Effect of the Invention) As is apparent from the foregoing description, according to the present invention, a ceramic for use in electronic components comprising grains each having a double phase structure composed of a main phase and a composite phase surrounding the main phase can be very easily prepared by dispersing a metallic oxide powder in a solution of a metal salt containing a metallic element component different from the component of said metallic oxide powder to deposit said metallic element component on the surface of said metallic oxide, molding said metallic oxide having said metallic element component deposited on the surface thereof into a desired shape, and firing the resulting molding. 4. Brief Description of the Drawing: The drawing is a schematic view of a crystalline structure of a ceramic for use in electronic components prepared according to the present invention. 1...polycrystal, 2...grain, 3...main phase, 4...composite phase, 5...grain boundary phase

Claims: A process for manufacturing ceramics for use in electronic components, said ceramics comprising a polycrystalline substance in which each of grains (2) constituting said polycrystalline substance comprises a main phase (3) and a composite phase (4) surrounding said main phase (3) and composed of a component of said main phase (3) and a component other than that of said main phase (3), characterized in that a metallic oxide powder is dispersed in a solution of a metal salt containing a metallic element component different from the component of said metallic oxide powder to deposit said metallic element component on the surface of said metallic oxide, and said metallic oxide having said metallic element component deposited on the surface thereof is then molded into a desired shape and thereafter fired.

Inventors: CHAZONO, HIROKAZU, FUKUI, MASAMI, KISHI, HIROSHI, MURAI, SHUNJI, YAMAOKA, NOBUTATSU
Applicants: TAIYO YUDEN KABUSHIKI KAISHA
Application year: 1987
Main classification: C04B35
IPC codes: C04B35, H01B3, H01G4, H01C7