ENZYMATIC SENSOR

Abstract: An enzymic sensor apparatus consists of an electrically insulating substrate (e.g., sapphire, diamond, silica, silicon nitride or Ta2O5) to which is applied an electrically conductive layer (e.g., iridium oxide, ITO (iridium-tin oxide), silver, platinum or PdO) and a redox layer (electrolytically polymerised 2,6-dimenthylphenol film) and then an immobilised enzyme layer. An ion-selective field-effect transistor may be used in place of the insulating substrate.

Description: TECHNICAL FIELD This invention relates to an enzyme sensor and, more particularly, to an enzyme sensor for measuring the concentration of a biological substrate by potentiometric response. BACKGROUND ART Examples of enzyme sensors known in the art are glucose sensors, urea sensors and uric acid sensors. These sensors are for measuring the concentration of a biological substrate after the concentration of hydrogen peroxide (H₂O₂) produced by an enzyme reaction or the concentration of oxygen (O₂) consumed by the reaction is measured amperometrically using an oxygen sensor or hydrogen peroxide sensor. For this reason, enzyme sensors generally are difficult to miniaturize. Another drawback is that these sensors cannot be utilized in enzyme reactions that are not accompanied by the consumption of oxygen or the production of hydrogen peroxide. One expedient for solving these problems is a sensor which determines the concentration of a biological substrate by measuring a change in pH that accompanies the progress of an enzyme reaction. In recent years attempts have been made to fabricate miniature enzyme sensors by utilizing ISFET (ion-selective field-effect transistor)-type pH sensors. However, the adhesion between an enzyme film and the surface of a gate insulating film (such as a film of Si₃N₄, Al₂O₃ or Ta₂O₅) used in these ISFET's is poor. As result, these sensors exhibit a somewhat low sensitivity, a large amount of drift and possess but a short service life. DISCLOSURE OF THE INVENTION An object of the present invention is to provide a miniature enzyme sensor for measuring the concentration of a biological substrate potentiometrically, which sensor is exhibits a high sensitivity, little drift and possesses a long service life. As means for solving the foregoing problems, the enzyme sensor of the present invention comprises an insulating substrate, an electrically conductive layer coating the insulating substrate, a redox layer having an oxidation-reduction function coating a surface of the electrically conductive layer, and an enzyme-fixed layer coating a surface of the redox layer and having an enzyme fixed thereto. In another aspect, the enzyme sensor of the present invention comprises a MOSFET, an electrically conductive layer coating a gate insulating film of the MOSFET, a redox layer having an oxidation-reduction function coating a surface of the electrically conductive layer, and an enzyme-fixed layer coating a surface of the redox layer and having an enzyme fixed thereto. In the arrangement of the first aspect of the invention, the concentration of a biological substrate is converted into a corresponding hydrogen ion concentration by the enzyme-fixed layer, and the hydrogen ion concentration is converted into a corresponding electric field by the redox layer. The electric field thus produced is measured by the electrically conductive layer as a potential difference across the sensor and a reference electrode. In the arrangement of the second aspect of the invention, the electric field is transmitted onto the gate insulating film of the MOSFET by the electrically conductive layer and is measured by the MOSFET. The invention thus provides a miniature enzyme sensor for measuring the concentration of a biological substrate potentiometrically. The sensor exhibits a high sensitivity, little drift and possesses a long service life. More specifically, the enzyme sensor of the present invention has the following advantages: (1) Since the enzyme sensor is constructed on the gate portion of an ISFET, the sensor can be ultra-miniaturized and adapted for multiple enzymes. (2) Since the the redox layer is used as a pH-sensitive film, sensitivity is high. (3) Since film formation is carried out by electrolytic polymerization, adhesion is excellent and film formation with good adhesion is possible even on irregular portion of the electrically conductive substrate. As a result, the sensor excels in durability and has a long lifetime. (4) Since the enzyme is fixed using electrolytic polymerization, enzyme fixation is excellent and the enzyme-fixed film obtained exhibits excellent adhesion and durablity. (5) Since measurement is performed potentiometrically, the enzyme sensor is capable of utilizing an enzyme reaction in which oxygen does not participate. (6) Since measurement is performed potentiometrically, there is little electrical leakage in in living bodies and in the measurement system. The sensor therefore is safe to use. (7) Since film formation is by electrolytic polymerization, film thickness can be readily controlled. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1(a) is a schematic view showing the construction of an iridium oxide electrode; Fig. 1(b) is a schematic sectional view of an enzyme sensor; Figs. 2(a), (b) are views illustrating the results of measurements in accordance with a first example of an enzyme sensor; Fig. 3 is a view illustrating the results of measurements in accordance with a second example of an enzyme sensor; Fig. 4 is a view illustrating the results of measurements in accordance with a third example of an enzyme sensor; Fig. 5 is a view illustrating the results of measurements in accordance with first comparative example of an enzyme sensor; and Figs. 6(a), (b) are schematic sectional views illustrating enzyme sensors utilizing a FET in a fourth example. BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will now be described in detail with reference to the drawings. In accordance with the invention, an enzyme electrode was fabricated by directly applying a coating of a redox layer (as by electrolytic polymerization) to a substrate obtained by depositing an electrically conductive layer (such as iridium oxide, ITO, platinum, palladium oxide or silver, which exhibit an oxidation-reduction reaction) on an insulating substrate (such as sapphire, diamond, SiO₂, Si₃N₄, Ta₂O₅), and coating the result with an enzyme-fixed layer (fabricated in accordance with a conventional enzyme fixing process or by carrying out an enzyme fixing reaction using an electrolytic reaction process in a reaction film for fixing an enzyme-fixed film, an example of the reaction film being one in which 1,2 diaminobenzene and pyrrole coexist), the potential difference across the enzyme electrode serving as an active electrode and a reference electrode (a saturated sodium calomel electrode) was measured, and the electrical characteristics due to the layers arranged as set forth above as well as the physical characteristics of these layers were tested. As a result, the problems (i.e. the tendency for the enzyme-fixed layer to peel off the gate insulating film, the reduced sensitivity, the large drift and the short service life) encountered when using a conventional enzyme sensor obtained by coating an ISFET with an enzyme-fixed layer were able to be solved. The slope of the Nernst equation, which is a typical characteristic, was more than 58 mV/pH (theoretically 60.54 mV/pH at 32 o C), thus closely approximating the theoretical equation. A high sensitivity of 73.87 mV/pH was obtained in the case of enzyme fixation when joint use was made of 1,2 diaminobenzene. In comparison, the slope of the Nernst equation for an enzyme sensor fabricated by directly coating an electrically conductive layer (e.g. iridium oxide) with an enzyme without an oxidative polymerization layer (a redox layer) was only 35.40 mV/pH, indicating a very low sensitivity. Example 1 Figs. 1(a), (b) are schematic views illustrating the construction of an enzyme sensor fabricated in accordance with the present embodiment. (1) Iridium oxide electrode An iridium oxide layer 2 having an area of 3 mm x 12 mm and a thickness of 1000 A was deposited, by means of sputtering, at three locations spaced apart by 3.2 mm on the surface of a sapphire substrate 1 having an area of 20 mm x 18 mm and a thickness of 1.5 mm. Leads 4 were connected to respective ones of the iridium oxide layers 2 by an electrically conductive adhesive 5 (Cyclone B, manufactured by Atsugi Central Laboratories K.K.) at locations 3 mm from the terminuses of the iridium oxide layers. Each connection was coated with an epoxy adhesive 3 (Araldyde, manufactured by Chiba Gaigi K.K.). The connections where thus insulated from the outside. A wall 3a was formed between mutually adjacent ones of the iridium oxide layers 2 by the same adhesive in order to prevent interaction between the layers 2. The resulting element was employed as an iridium oxide electrode. (2) Redox layer A redox layer 6 was deposited on the surface of the iridium oxide electrode by an electrolytic polymerization process. Electrolysis was carried out using a three-electrode cell in which the iridium oxide electrode, a silver/silver chloride electrode and a platinum coil were employed as an active electrode, reference electrode and opposing electrode, respectively. 〈Composition of electrolyte solution〉 2,6-dimethylphenol 20 mmol/ℓ sodium perchlorate 0.1 mol/ℓ acetonitrile (solvent) 〈Electrolytic conditions〉 The electrolyzing potential was swept three times (sweep rate: 50 mV/sec) from 0 to +1.5 V (vs. Ag/AgCl) in a nitrogen atmosphere at a temperature of -20 o C, followed by carrying out constant-potential electrolysis for 10 min at a constant potential of +1.5 V. A poly(2,6-dimethylphenol) film (having a layer thickness of about 30 µm) was formed. (3) Enzyme-fixed layer A glucose oxidase film was deposited, through a procedure set forth hereinbelow, as an enzyme-fixed layer 7 on the surface of the redox layer 6. The film was deposited by a crosslinking process using glutaric aldehyde as a crosslinking agent. (Solution A): 15 wt-% cow blood serum albumin was dissolved in a pH 8.04 phosphate buffer solution, and 0.5 g of glucose oxidase was dissolved in 5 ml of the resulting solution. (Solution B): 25% glutaric aldehyde aqueous solution (Solution C): 10% glycin aqeuous solution About 6 µl of the A solution per iridium oxide electrode was placed on the redox layer 6 by using a microsyringe, after which drying wall allowed to take place for about 1 min. The same amount of the B solution was applied in drops, followed by 1 min of drying. The electrode was then dipped into Solution C for about 1 min, thereby removing unreacted glucose oxidase. A glucose oxidase layer was thus deposited as the enzyme-fixed layer 7. Example 2 (1) Iridium oxide electrode An iridium oxide electrode similar to that of Example 1 was formed. (2) Redox layer The redox layer 6 was deposited on the surface of the iridium oxide electrode through a process similar to that used in Example 1. (3) Enzyme layer By a process described herein below, glucose oxidase was incorporated in a 1,2-diaminobenzene electrolytic polymerization film and the enzyme-fixed layer 7 was deposited on the redox layer 6. Using the iridium oxide electrode coated with the redox layer 6 as an active electrode, a silver/silver chloride electrode as a reference electrode and a platinum coil as an opposing electrode, electrolytic polyermization was carried out in an aqueous solution of 1,2-diaminobenzene containing glucose oxidase. As a result, an electrolytic polymerization film of the 1,2-diaminobenzene was formed and, at the same time, the coexisting glucose oxidase was incorporated in the film and the glucose oxidase film was deposited. 〈Composition of electrolyte solution〉 glucose oxidase 1 mg/l ml 1,2-diaminobenzene 20 mM sodium perchlorate 0.5 M water solvent 〈Electrolytic conditions〉 The electrolyzing potential was swept three times (sweep rate: 50 mV/sec) from 0 to +1.5 V (vs. Ag/AgCl) in a nitrogen atmosphere, followed by carrying out constant-potential electrolysis for 30 min at a constant potential of +1.5 V. Example 3 (1) Iridium oxide electrode An iridium oxide electrode similar to that of Example 1 was formed. (2) Redox layer The redox layer 6 was deposited on the surface of the iridium oxide electrode through a process similar to that used in Example 1. (3) Enzyme layer With use of pyrrole instead of 1,2-diaminobenzene, a glucose oxidase film was deposited as the enzyme-fixed layer 7 on the redox layer 6 through a process similar to that used in Example 2. 〈Experiment 1〉 The glucose concentration of a liquid specimen was changed and the response to this change exhibited by the enzyme sensor prepared in accordance with Example 1 was investigated. This was done by measuring the potential difference across a reference electrode (a saturated sodium chloride calomel electrode) and the enzyme sensor prepared in Example 1. The temperature of the liquid specimen was set at 32 o C, and the pH was adjusted to 6.86 by a phosphate buffer solution. The change in potential was measured while varying concentration by adding 500 mg/dl of an aqueous glucose solution dropwise to 10 mg/dl of an aqueous glucose solution. Measurement was performed 10 min after the dropwise addition of the glucose solution when the potential had stabilized. The results obtained are shown in Fig. 2(a). A plot of electrode potential vs. the logarithm of the prevailing glucose concentration is shown in Fig. 2(b). The graph shows excellent linearity between the logarithm of glucose concentration and She potential of the enzyme sensor. The approximate expression is as follows: E(mV) = 79.22 + 68.70 log (glucose) 〈Experiment 2〉 Measurement similar to that in Experiment 1 was performed using the enzyme sensor prepared in accordance with Example 2. The results are shown in Fig. 3. The linear approximate expression is as follows: E(mV) = 69.22 + 73.87 log (glucose) 〈Experiment 3〉 Measurement similar to that in Experiment 1 was performed using the enzyme sensor prepared in accordance with Example 3. The results are shown in Fig. 4. The linear approximate expression is as follows: E(mV) = 65.46 + 57.59 log (glucose) 〈Comparison Example 1〉 For comparison purposes an iridium oxide electrode was directly coated with an enzyme-fixed layer to fabricate an enzyme sensor which, in other aspects, was identical with the enzyme sensor of Example 1. This sensor was subjected to the measurement just as in Experiment 1. Though a substantially linear relationship is obtained between the log of glucose concentration and the potential response of the enzyme sensor, as shown in Fig. 5, the approximate expression is E(mV) = 319.31 + 35.40 log (glucose) It will be appreciated that the slope is small in comparison with the enzyme sensors of Examples 1, 2 and 3. Example 4 An enzyme sensor was fabricated as shown in Fig. 6(a). Specifically, a MOSFET 11 was formed on a sapphire substrate 10 by utilizing a semiconductor processing technique, an isolated gate portion 12 was then formed by depositing iridium oxide on the substrate at a portion thereof spaced slightly away from the MOSFET 11 using a reactive sputtering process, a redox layer 13 and an enzyme-fixed layer 14 were formed just as in Examples 1 through 3, and the resulting element, with the exception of the isolated gate 12, was coated with an insulator 15. The enzyme sensor thus fabricated exhibited a high sensitivity of 60 - 70 mV/decade, similar to the sensitivities obtained in Experiments 1 through 3. It is also possible to produce an enzyme sensor of the kind shown in Fig. 6(b). Here the enzyme sensor is obtained by forming an electrically conductive layer 22 (such as iridium oxide) on the surface of a gate insulating film 21 (a film of SiO₂/Si₃N₄) of a MOSFET 20, forming a redox layer 23 on the conductive layer 22, forming an enzyme-fixed layer 24 on the redox layer 23, and coating the element with an insulator 25, leaving the layer 24 exposed. Though the invention has been described in connection with an embodiment in which iridium oxide is employed as the electrically conductive layer, similar results can be obtained using ITO, platinum, palladium oxide and silver as the electrically conductive layer. Further, the invention has been described in connection with an embodiment in which a FET sensor is obtained by coating an enzyme electrode and the gate insulation film of a MOSFET formed on a sapphire substrate with layers. However, an enzyme sensor having high sensitivity, little drift and a prolonged service life can be fabricated by applying coatings consisting of an electrically conductive layer, a redox layer and an enzyme-fixed layer, as illustrated in the embodiment, and the method of measuring the electric field produced in accordance with the concentration of the biological substrate is not limited to the method of the embodiment.

Claims: An enzyme sensor comprising: an insulating substrate (1); an electrically conductive layer (2) coating said insulating substrate; a redox layer (6) having an oxidation-reduction function coating a surface of said electrically conductive layer; and an enzyme-fixed layer (7) coating a surface of said redox layer and having an enzyme fixed thereto. The enzyme sensor according to claim 1, characterized in that said insulating substrate (1) is selected from among substances exhibiting an insulating property, such as sapphire, diamond, SiO₂, Si₃N₄ and Ta₂O₅. The enzyme sensor according to claim 1, characterized in that said electrically conductive layer (2) is selected from among substances manifesting an oxidation-reduction reaction, such as iridium oxide, ITO (indium-tin oxide), Pt, PdO and Ag. The enzyme sensor according to claim 1, characterized in that said redox layer (6) is a layer sensitive to hydrogen ion concentration and is formed by an electrolytic oxidative polymerization reaction. The enzyme sensor according to claim 1, characterized in that said enzyme-fixed layer (7) is formed by an electrolytic (oxidative) polymerization process. The enzyme sensor according to claim 1, characterized in that said enzyme-fixed layer (7) is formed by a crosslinking process or by an incorporating process. An enzyme sensor comprising: a MOSFET (20): an electrically conductive layer (22) coating a gate insulating film (21) of said MOSFET (20); a redox layer (23) having an oxidation-reduction function coating a surface of said electrically conductive layer (22); and an enzyme-fixed layer (24) coating a surface of said redox layer and having an enzyme fixed thereto. The enzyme sensor according to claim 7, characterized in that said electrically conductive layer (22) is selected from among substances manifesting an oxidation-reduction reaction, such as iridium oxide, ITO (indium-tin oxide), Pt, PdO and Ag. The enzyme sensor according to claim 7, characterized in that said electrically conductive layer (22) is an isolated gate formed is slightly spaced-away relation with respect to a FET portion. The enzyme sensor according to claim 7, characterized in that said redox layer (23) is a layer sensitive to hydrogen ion concentration and is formed by an electrolytic oxidative polymerization reaction. The enzyme sensor according to claim 7, characterized in that said enzyme-fixed layer (24) is formed by an electrolytic (oxidative) polymerization process. The enzyme sensor according to claim 7, characterized in that said enzyme-fixed layer (24) is formed by a crosslinking process or by an incorporating process.

Inventors: SHIMOMURA, TAKESHI TERUMO KABUSHIKI KAISHA, UCHIDA, NAOTO TERUMO KABUSHIKI KAISHA, YAMAGUCHI, SHUICHIRO TERUMO KABUSHIKI KAISHA
Applicants: TERUMO KABUSHIKI KAISHA
Application year: 1987
Main classification: G01N27
IPC codes: C12Q1, G01N27