INSTALLATION FOR FLOATING TRANSPORT AND PROCESSING OF WAFERS

Abstract: Installation (10) for processing, mainly under floating condition, of wafers (12) in a series of at least almost sealed-off process modules (18, 20, 22, 24 and 26), whereby transfer of successive wafers (12) takes place under floating condition through interfacing tunnel passages (36).

Description: Installation for floating transport and processing of wafers. The invention relates to process installations with a floating trans¬ port and processing of wafers. In the U.S. Patents No's 4 495 024, 4 521 263 and 4 560 590 of appli¬ cant installations are described, wherein transport and processing of wafars in a tunnel passageway take place under double-floating condition. Because in such in-line installation processings take place in multi¬ ple processing sections of this passageway, these processings have tα occur simultaneously because of the limited time, available. Thereby it is impossible to prevent differences in pressure in this tunnel passageway during these processings, whereby the controlling means of this installation cannot act fast enough to prevent the resulting dis¬ placement of the wafers from their respective processing positions. The installation according to the invention eliminates these short¬ comings and is mainly characterized by the taking place of the processings and handling of the wafers in individual, at least almost sealed—off modu¬ les, whereby tunnelpassage sections interface these modules. For that purpose, a circular separation wall is used in these modules, extending around their processing chamber as part of this tuππelpassageway and whereby this wall at its top is provided with a cover, forming a cap. In addition, the preferably circular bottom edge of this cap corres¬ ponds with a preferably circular partition rim of the lower tunnel block. rieans are included in these modules to move this cap to and from this tunnelblock rim. For most of the modules in the lowest position of the cap its lower edge over a micro distance is removed from the tuπnelblock rim, preventing a mechanic contact in beteeπ. This position provides a sufficient sealing off of the processing chamber during the processing. For each module the lower tunnel block is recessed inside the rim, providing a circular discharge passage, whereby in open position of the cap gaseous medium is urged from the pressurized adjacent tunnel passageways through the gap in between the cap and this block rim towards this dischar¬ ge passage, taking with it any micro particulates, created in this gap. Furthermore, the modules include a lower chamber block and an upper chamber block. These chamber blocks also assist in the linear displacement of the wafer to and from the centre of these modules under preferably dou¬ ble-floating condition and in their wafer transport position can be consi¬ dered an extension of the lower and upper tunnel blocks. The circular lower chamber block is located within the recessed lower tunnel block, with the cylindrical discharge passage around it. The upper chamber block is located within the recessed cap. The wafer to be processed and arriving under the cap, may not partly remain in the circular gap between this cap and the lower tunnel block during the following downward displacement of this cap. Therefore, a fastest obtai- ned centric position of such wafer with regard to this cap is essential. To meet this condition, in an embodiment of the installation this cap functions as a stop for the wafer movement and for that purpose is til- table. During the arrival of the wafer by means of a stepper motor the en¬ trance side of this recessed cap is tilted upwardly, whereas the exit side thereof remains at least close to the lower tunnel block, providing this wafer stop. By positioning a series of orifices in this cap, providing multiple mini flows of gaseous medium towards the edge of the arriving wafer, an ef¬ fective buffer atop and a following centering of this wafer with regard to this cap is established. In another embodiment these series of orifices are arranged in the lower tunnel block around the cylindrical daischarge passage αf the module and whereby multiple flows of gaseous medium from these orifices are urged through the micro gap in between the cap and the lower tunnel block towards the wafer edge to provide the buffer stop of the arriving wafer and there¬ after a contact-free central position of the floating wafer during the pro¬ cessing. During the discharge of the wafer from the module at least the exit side of this cap by means of another stepper motor is tilted upward ' to an open position. In another embodiment the upper chamber block is part of the cap and whereby this combination by means of at least one stepper motor is displa- ceable in up- and downward direction. Thereby also the lower chamber block is provided with a means for a displacement thereof in up— and downward di— rectioπ. During the processing in the module the circular discharge passage, extending upward aside the wafer edge towards the upper processing gap aside this wafer, also functions as a discharge channel for the processing medium. Thereby the multiple mini flows αf gaseous medium from the orifices in the cap and/or lower tunnel block are urged towards this wafer edge and thereafter removed in downward direction through this discharge passage and so maintain the noπ mechanic contact condition for this wafer. The width of the tunnel passageway is slightly larger than the dia¬ meter of the wafer, whereas in both vertical side walls of this passageway series of orifices of medium supply channels are located for urging flows of gaseous medium toward the wafer edge for a contact-free wafer displace¬ ment and to enhance the fast establishing of the centric wafer position in the receiving module. For certain processings, as for instance deposition of a primer or coating on the wafer, this lower chamber block can at least temporary func¬ tion as a chuck with the wafer suctioned thereon under vacuum force. This chuck is driven by a spin motor to provide the successive spin rpm's of the wafer during the processing. Both lower and upper chamber block*of the odulss are provided with at least one central supply channel to feed the established tunnel section in between these chamber blocks with gaseous transport medium during the linear wafer transfer to and from these modules and to feed both establis¬ hed processing gaps aside the wafer with processing medium during the pro- ceasing αf this wafer. The individual chamber blocks enable in an adapted configuration of such module to function as dehydration bake oven or proximity bake oven. Thereby in this module the heat transfer from these chamber blocks toward the adjacent tunnel blocks remains within acceptable values. Furthermore, in the process module during the processing of the wafer temporary a vacuum can be drawn for vacuum processings, as for instance dehydration bake or the deposition of warm coating in vapor or gaseous phase on the heated wafer. Micro contaminated ambient air from outside the installation may not enter the process modules, wherein a main processing of the wafers takes place. For that purpose, the group of successive individual process modules cooperate with partition systems, located in both the entrance and exit of the installation. Thereby in the tunnel passageway of this installation an overpressure of the medium is maintained with regard to the atmospheric pressure of the ambient air. In addition, at the tunnel entrance a cleaning module functions as buffer in collecting all contaminated medium, entered the tunnel together with the supplied wafers. If the tunnel exit of the installation is connected with a high va¬ cuum process module, then the cap of a wafer transfer module of this in¬ stallation also functions as a temporary seal for this vacuum module, whe¬ reby wafers, supplied from process modules through the tunnel passageway and open cap to this transfer module, are successively transferred toward this vacuum module through a discharge opening in the lower tunnel block of this transfer module. In the lower tunnel block in between the modules another sealable discharge channel is located. In the start phase of the transfer of a wafer from a sender module towards a receiving module the discharge channel in front of the receiving module is open and the other discharge channels and — passages are closed and whereby a maximum flow of transport medium from this sender module in the direction of this discharge channel provides a fastest wafer displacs- ment under floating condition, also in the receiving module. If the wafer in the end phase αf its linear displacement for the grea¬ ter part thereof is brought underneath the opened cap of the receiving mo¬ dule, a sensor sends'an impuls towards the valve of this discharge channel for a closing thereof. In addition, it sends an impuls towards the gate of the discharge channel αf the receiving module to open this passage far the final centering of the wafer in this module. Both central supply channels of the chamber blocks are connected with a series of branched channels, arranged in radial direction and extending in lateral direction towards at least close to the outside αf these blocks. The medium, flowing through these channels, assist in the double- floating condition for the wafer during its transfer and processing. During the successive processings in the process module the following processing fluid, urged through these supply channels and branched channels, effectively remove the preceding processing fluid from preferably both micro processing gaps aside the wafer. In the end phase of the processings the processing liquid is effec¬ tively removed from the wafer surface by the following flows of gaseous medium, preferably an inert gas, urged through these channels and moving from these channels in the processing gaps in lateral direction towards the cylindrical discharge passage and further downward to the main discharge of the processing chamber. Thereby in the cleaning module the wafer edge is effectively cleaned by means of the processing medium, discharged from the upper processing gap and moving downward along this edge. This under assistance αf multiple flows of medium from the cylindrical micro gap in between the cap and the lower tunnel block and possibly from the inner sideωall of the cap. and which are directed toward and along this wafer edge in downward direction to the main discharge αf the processing chamber. In another embodiment of the installation the main buffering of the arriving wafer takes place underneath the lower tunnelblock rim by means of multiple mini flows of medium from series αf mini supply orifices, located in the top section of the sidewall of this recessed lower tunnel block. Thereby the cap, with preferably the upper chamber block part thereof, is coupled with only one stepper motor for its displacements in up and down¬ ward direction, whereas the lower chamber block is coupled with at least two stepper motors to enable the required tilting thereof. During the arrival of the wafer in the module the discharge side of this chamber block is in its downward position to enable this buffer stop of the wafer. For this buffer use can be made of a temporary wet wall structure in this upper section of the inner wall αf the lower tunnel block and whereby flows of liquid from the wall apertures at least cooperate in establishing this buffer stop for the arriving wafer. In this embodiment preferably the outside diameter of the cap is slightly smaller than the inside diameter of the recessed lower tunnel block and whereby by means of its stepper motor its lower section is moved into and out of this recess. Thereby the precision made components cooperate to such extent, that in this position a micro cylindrical gap is established aside this lower cap section for a sufficient sealing off of the established processing cham¬ ber. In addition, in a lower section of this inner sidewall of the tunnel block a series of mini orifices are arranged in radial direction. During the processing, flows from these orifices are directed to the edge of the wafer, brought together with the lower chamber block to the lo¬ wer processing position, and provide the contact—free processing of this- wafer. During the processing the escape of processing medium from the pro¬ cessing chamber via the micro gap in between the cap and the lower tunnel block is prevented by means of mini flows of medium, directed towards this gap and urged therethrough as one, in radial direction uninterrupted flow of medium into the processing chamber, thereby establishing a medium lock in this gap for this processing medium. During the wet processing of the wafer this medium can temporary be a processing medium in liquid form, whereas during the following drying cycle in the module this liquid is replaced by an inert gas. Within the scope of the invention various processings of the wafer are possible with any other configuration of the processing chamber. Additional positive characteristics of the installation follow from the description of the following Figures: FIG. 1 shows in a simplified longitudinal sectional view the instal¬ lation according to the invention, including a number of process modules. FIG, 2 is a horizontal longitudinal sectional view over the tunnel passageway αf the installation according to FIG. 1. FIG. 3 is a cross sectional view αf a cleaning module. FIG. is a cross sectional view of an etch module. FIG. 5 is a cross sectional view of a module for deposition on the wafer of a coating in vapor phase. FIG. 6 is a cross sectional view of a module for deposition on the wafer of a coating in liquid form. FIG's 7A,B,C and D show the module according to FIG. 6 in successive secundary processing positions of the wafer. FIG. 8 shows a detail of the processing chamber of a proximity bake module, with the wafer in its lowest position for a minimal heat transfer to it. FIG. 9 is the detail according to FIG. 8, whereby the wafer is urged upward towards the upper chamber block for a maximum heat transfer to it. FIG. 10 is another configuration of the proximity/dehydration bake module, whereby the combination αf lower chamber block and floating wafer is displaceable in upward direction toward the upper chamber block for a controlled heat transfer to the wafer. FIG. 11 is a cross sectional view of the tunnel passageway of a receiver module with a tilted inlet side of the cap for admitting an arriving wafer. FIG. 12 is the view of FIG. 11, whereby the lower chamber block is further tilted toward a buffer stop position for the arriving wafer. FIG. 13 is the view αf FIG. 12, with an established wafer stop. FIG. 14 is the view of FIG. 13, whereby the cap and the lower chamber block together with the floating wafer are moved to their lowest processing position. FIG. 15 is a schematic longitudinal sectional view of a section of the tunnel passageway αf the installation with the transfer of a floating wafer from a sender module toward a receiver module. FIG. 16 is the tunnel section according to FIG. 15, whereby the wafer is in its end phase of linear displacement. FIG. 17 is the tunnel section according to FIG. 16, with an establis¬ hed buffer stop of the wafer. FIG. 18 is the sectional view according to FIG. 14, whereby processing of the wafer takes place. FIG. 19 is an enlarged detail of the view of FIG. 18, showing the urging αf flows of medium toward and along the wafer edge. FIG. 20 is a cross sectional view over line 20-20 of the detail of FIG. 19. FIG. 21 is the view according to FIG. 18, whereby the lower chamber block together with the wafer is moved upward to their wafer transfer position. FIG. 22 shows the section according to FIG. 21 , with a tilted exit side of the cap to allow the transfer of the floating wafer from this mo¬ dule as sender module, FIG, 23 is a cross sectional view of another configuration of a mo¬ dule, with a buffer stop in the lower tunnel block, FIG, 24 is an enlarged detail of the bufferstop section of the module according to FIG. 23, with an arriving wafer. FIG, 25 is the section according to FIG. 24, showing a completed buffer stop of the wafer, FIG, 26 is an enlarged detail of the processing section of the module according to FIG. 23 during the wet processing of the wafer. FIG. 27 is the detail according to FIG. 25 during the following dry¬ ing cycle. FIG. 28 is the module according to FIG. 23, with a modified arrange¬ ment of the orifices in one medium supply block. FIG. 29 is an enlarged detail of the module according to FIG. 28, showing the buffer stop of an arriving wafer. FIG. 30 is a cross sectional view over line 30-30 of the detail ac¬ cording to FIG. 29. FIG. 31 is a cross sectional view aver line 31-31 of the detail ac¬ cording to FIG. 29. FIG. 32 is the detail according to FIG. 29, with the lower chamber block and floating wafer moved downward towards their processing posi¬ tion. FIG's 33, 34 and 35 show the detail of FIG. 32, with the cap, also functioning as upper chamber block , gradually moved downward to its lowest processing position. FIG's 36, 37 and 38 show the detail of FIG. 35, whereby after the processing the combination of lower chamber block and floating wafer toge¬ ther with the upper chamber block move upward to near their wafer trans¬ fer position. FIG. 39 shows a sender and receiver installation according to the invention connected with a main processing module. FIG. 40 is a cross sectional view over line 40-40 of the installation according to FIG. 39. FIG. 41 shows the wafer transfer module, incorporated in the instal¬ lation according to FIG. 39, with a vacuum chuck moved inside this module for a wafer transfer. FIG. 42 is the module according to FIG. 41 , whereby the removal of this vacuum chuck together with the wafer from this module takes place. In FIG. 1 the installation 10 for successive processings of wafers 12 is shown, see also FIG. 2. This installation consists αf supply module 14, gate module 16, cleaning module 18, module 20 for dehydration bake, module 22 for deposition of a primer in vapor phase on the wafer, module 24 for deposition of a coa- ting in liquid form on the wafer, module 26 for proximity bake, gate module 28 and discharge module 30. FIG, 3 shows the cleaning module 18 in a longitudinal sectional view. This module mainly consists of lower tunnel block 32, upper tunnel block 34, tunnel passageway 36 in between these blocks, recess 38 in the lower tunnel block, lower chamber block 40 as chuck, together with its drive 42 mounted on support 44, displacers 46 and 48, mounted on the lower block extension 50 for an up- and downward and whether or not tilted displacement of this block 40, cap 52, located in the recess 60 of the upper tunnel block 34, upper chamber block 54 and displacers 56 and 58, mounted on this block, for a whether or not tilted up- and downward displacement of this cap 52. Linear displacement of the wafer 12 takes place under floating con¬ dition, enabled by the flow of gaseous medium 100 from the orifices 62 and 64 in the tunnel passageway 36, orifices 66 in the lower chamber block 40 and orifices 68 in the upper chamber block 54. During the wafer transfer the discharge of the transport medium whether or not temporary takes place through the central discharge 70, lo¬ cated in the center of the tunnel passageway 36 and the cylindrical dis¬ charge passage 72 around the lower chamber block 40, with a discharge through at least one of the channels 74 and 76, located in the lower end of the extension 50 of the lower tunnel block 32. The wafer transfer system of the installation 0 is shown in FIG's 11 through 17. In FIG. 11 wafer 12 is transferred from the tunnel passageway 36 into the receiver module 122. Thereby the inlet side 80 of the cap 52 is moved upwardly to enable the entering of this module by the wafer. Sensor 82 has registered the arrival of the wafer and sends an impuls to the displacer 48 to move the exit side 84 of the lower chamber block 40 in downward direction. 5 In addition, to compensate for the loss in height of this exit side of the block,an upward displacement of the inlet side 86 of this block 40 is established by displacer 46, see FIG. 12. Furthermore, by means of impulses from this sensor the discharge channel 74 of the module is opened and the discharge channel 70 closed, 10 see also FIG. 16. Thereupon the wafer 12 is displaced toward its centric end position, whereby in the end phase this wafer with its edge rests against buffer 90. This buffer is fed by gaseous medium 100, supplied by the supply channels 92, extending into the tunnel passageway 36, urged through the micro gap 15 94 in between cap 52 and rim 96 of the lower tunnel block 32 toward- this wafer edge 88 and discharged in downward direction through the cylindrical discharge passage 72 toward • discharge 74. Within the scope of the invention the buffer 90 can also be fed by other supply channels, whether or not extending into this tunnel passage— 20 way. Additional buffering of the wafer takes place by means of flows of gaseous medium 100 from the preceding passageway at the entrance side of this module. These buffer thrusts cooperate with the gravity force of the wafer as the result of the inclined position αf the lower chamber block 40. 25 Sensor 98 registers the definite arrival of the wafer 12 in its end position and sends an impuls to the displacer 46 to move the inlet side 86 of this lower chamber block 40 downward toward approximately the same le¬ vel as that of the exit side 84, see FIG. 13. In addition, with an impuls the discharge 76 of this module is opened 30 Thereafter by means of a whether or not delayed impuls from the sen¬ sor 98 the inlet side 80 of the cap 52 is moved downward to its lowest po¬ sition at least near the rim 96 of the lower tunnel block, see FIG. 14. As a result, the wafer 12 becomes enclosed within the module, where¬ upon processing thereof takes place. 35 In FIG. 15 the wafer is discharged from the sender module 120 through its exit section 108 and transferred toward the receiver module 122. There by this floating wafer is guided during its discharge from module 120 by means αf flows of gaseous medium 00 from the supply channels 102 and urged through multiple ports in both raised sidewalls 104 and 106 toward the wafer edge 88. As the discharge channel 70, located in front of the receiver module 122, is opened and the other discharges at least as much as possible are closed, in the area around this discharge 70 a lower pressure is created and temporary maintained and whereby the gaseous medium 100from these chan¬ nels 102 and channels 66 of the lower chamber block 40 is suctioπed toward this discharge area. The wafer is urged to move together with these gas flows, because at least in the tunnel passageway 36 it functions as a moving pressure wall. During this wafer transfer the double-floating condition for the wa¬ fer in this tunnel passageway is also maintained by means of the supply of gaseous medium 100 from the ports 62 in the lower tunnel block 32 and the ports 64 in the upper tunnel block 34. As a result, the wafer is moved in the direction of this receiver module 122 and without a mechanic contact with the sidewalls 104 and 106, due to the effective guidance thereof by means of the flows of medium from the ports in these walls. In FIG. 16 this wafer 12 for the greater part thereof has entered the receiver module 122. The sensor 82 registers this arrival with thereafter the buffer stop, as shown in FIG. 17 and described in FIG's 13 and 14. In this receiver module 122 also a guidance of the wafer 12 takes place by means of flows of gaseous medium 100 from the channels 102, loca¬ ted in the sidewalss 104 and 106 and urged towards the wafer edge 88, In FIG, 18 in processing chamber 110 a two-sided processing of the wafer 12 takes place with supply of medium in liquid form through the chan¬ nels 66 in the lower chamber block 40 and channels 68 in the upper chamber block 54. Thereby by means of the gaseous buffer 90 a contact-free rotation of the floating wafer is maintained, Both gaseous buffer medium 100 and the processing medium are dis¬ charged in downward direction through the discharge passage 72, To maintain a sufficient buffer capacity with the almost closed cap 52, in its lower wall 112 recesses 114 are located, whereby a larger flow of gaseous medium is urged therethrough towards the wafer edge 88, see FIG's 19 and 20, In addition, at least during the spin processing the sup¬ ply of gaseous buffer medium is increased. During this processing in the tunnel passageway 36 an overpressure with regard to the pressure in this module 122 is maintained. As a result, no processing medium in liquid form can be urged through the micro gap 94, with a height of 10-30 micrometer, into this tunnel passageway. Such pro¬ cessing medium is immediately returned to the processing chamber. In the recesses 114 the supply channels have a larger diameter, whe¬ reby the resulting increased flows of gaseous medium prevent the escape of 5 the processing medium through these recesses. In another configuration one or more channels 92' extend into the rim 96 underneath these recesses, with between these ports and the tunnel passageway the micro gap 94, see FIG, 19, After the wet processing by means of the supply of gaseous processing 0 medium 100 through the channels 68 and rotation of the floating wafer the removal of the liquid processing medium from the top side 116 of this wafer and the upper chamber block 54 takes place. Thereafter the liquid processing medium is removed from the bottom side 118 of the wafer and this chamber block 40 by means of gaseous medium, 15 supplied through the channels 66, see FIG. 21. For the processing under any allowable temperature and pressure use can be made of any type of processing medium, with during this processing the switching from one processing medium to another. Thereupon both lower chamber block 40 and exit side 126 of the cap 20 52 are displaced in upward direction to enable the transfer of the wafer from this module 122 toward another module. Thereby this module functions as sender module, see FIG. 22. Thereby preferably the top side128 of this lower chamber block 40 is just above the lower wall 130 of the tunnel passageway to enable an uπob- 25 structed removal of the floating wafer. The membrane 132 is on one side secured to the support 44 and on the other side to the extension 78 of the lower tunnel block 32, enabling the small tilted displacements, 0,6 mm, of the lower chamber block 40, Furthermore, the mountings 134 of the displacer shafts 136 allow the- 30 se tilted displacements. In FIG, 4 the lower chamber block 40 of the process module 138 is not rotated by a motor. Thereby the displacers 46 and 48 are secured to the cover 140, which is leak-free attached to the lower side of the lower tun¬ nel block 32. The membrane 132 leak-free connects the lower chamber block 35 40 with the cover 140, This module is suitable for cleaning, rinsing, stripping, developing and etching. In an adapted form this module can be used for de-hydration bake, proximity bake and the deposition of a coating on the wafer in whether or not vapor phase . Furthermore, this module in an adapted form is suitable to function as wafer transfer module. The chamber blocks 40 and 54 are heated by means of warm liquid, urged through the channels 142 and 144. The temperature of these blocks can be maintained higher as the boiling point of the final processing liquid under whether or not a lower pressure or vacuum. Consequently, during the following processing by means of gaseous medium the evaporation of liquid remnants is accelerated. The discharges 74 and 76 for a discharge of these liquids can be connected with separate discharge systems. The processing installation, wherein this module is located, is pro¬ vided with separators for the separation of the various types of medium and supply systems αf these separated mediums. In the lower chamber block 40 during the processing by means of pro¬ cessing medium, urged from inclined channels 66 towards the floating wafer, a rotation of this wafer is maintained. Thereby a separate supply 146 is connected with some αf these chan¬ nels to provide the linear wafer displacement under floating condition, In FIG. 5 module 22 for deposition on the wafer 12 of a primer 158 in vapor phase, as for instance HMDS primer, under vacuum and high tempe¬ rature, is shown. Heating of this module mainly takes place in the upper chamber block 54 by means of elements 160, located therein, and the heating block 162, located in the lower section of this module. The lower chamber block 40 can also be provided with a heating ele¬ ment. The heated swivel arm 164 for the supply of this medium is located in the installation aside this module, similar as is shown in FIG. 6 for the coating module. In this module the wet wall 150 is used, whereby possibly only in the end phase of the linear wafer displacement or during part of the pro¬ cessing liquid medium is urged to this wall. Furthermore, the size of this wet wall can be minimal, with only a ring shaped buffer profile immediately underneath the rim 96. With the functioning as wet wall, also during the processing, prefe¬ rably use is made of a liquid medium with a relatively high boiling point, limiting the evaporation thereof. The processing occurs in the center of the chamber 166, whereas during the deposition of the primer laminar flows of warm gaseous medium 100 from the upper chamber block 54 move in downward direction along the wafer to¬ wards the discharges in the lower section of this chamber. Consequently, a sufficient high temperature of the wafer, for instaπ- ce 100-150°C. is maintained. As possibly in a preceding module dehydration bake under high vacuum has taken place, during the deposition of the primer a high vacuum is not required. For an uniform deposition αf the primer use is made of the drive 42 for rotation of the wafer under low rpm. This drive is mounted on the plate 44. Within the scope of the invention this drive can be omitted. The displacer 174, with its shaft 176 secured to the lower side αf this plate, is with its housing 178 attached to the support 180. This sup¬ port is coupled with the displacer shafts of the displacers 46 and 48, whereas the housing 182 is secured to the bottom 184 of the cover 186. The membrane 188 is with one end secured to the support 180 and with the other end to this bottom 184, enabling the required slight tilting αf this support 130. The cylindrical separation wall 190 is secured to this support 180. It funstions also as support for the heating block 162 and as inner wall for the wet wall 192. Thereby medium 194 is urged through the cylindrical passage 196 towards the top of this wet wall. During the processing this wet wall collects a part of the not depo¬ sited primer. Furthermore, through supply channel 198 gaseous medium 200 is supplied to the chamber 202 inside the separation wall 190. If required, during the processing a flow 204 of this medium 200 is maintained along the bottom side αf the wafer 12. A periodically enlarged supply αf liquid medium 206 through the wet wall 150 provides the discharge in downward direction of primer particles, deposited on the inner wall 208 of the cover 186. Within the scope of the invention this inner wall can also be a wet wall. The wet wall can also be configurated as medium supply walls 74', with recessed segments aside, see FIG. 20, Thereby a supply of medium through these medium supply walls for a buffer stop at the end of its linear displacement. In FIG. 6 the module 24 for deposition of a coating 212 on the wafer is shown. Thereby its structure is almost the same as that of module 22. The swivel arm 21 for supply of this coating is located in the section 216 of the installation 10 aside this module. Thereby during non- processing the orifice 218 is preferably located in this section. To deposit the coating on the wafer 12 this arm is swiveled through the opening 220 toward the inside of the module. In chamber 222 the deposition of coating takes place, whereby during the spinning of the wafer excessive coating is spinned from the wafer and deposited on the inner wall 224 αf the cover 226. The medium, preferably a thinner 228, supplied through the wet wall 150 and flowing in downward direction along this wall toward the lower section of the module, maintains a layer thereof on this wall to collect this excessive coating and discharge it. Thereby periodically an enlarged supply of this medium is possible to enhance such discharge αf coating particles. At least temporary during the spin processing thinner, is urged through the supply channel 196. toward the top of the wet wall 192 and whereby thinner might be deposited on the bottom side of the wafer 12 and spinned off. For that purpose the turntable 40 by means αf the displacers 46 and 48 is moved in downward direction and whereby the height of the gap 230 is reduced to that extent, that the thinner, discharged from this gap, ma¬ kes a contact with the bottom side 232 αf the wafer. After the processing the turntable,with the wafer suctioned thereon, is displaced upwardly. In the processing section 234 of this module, see also FIG. 7A, the wafer 12 is brought to a floating condition thereof on the table 40 by means of thinner, supplied through the channels 66 of this table. In addition, in this narrowestsection a removal of the coating from the wafer edge 88, bottom side 232 and the outer section 236 of the top side of this wafer takes place. For that purpose through the wet wall 150 a whether or not increased amount of thinner 228 is supplied and whereby the wafer edge 88 during the rotation of this wafer is in contact with the layer of thinner, collected on the wet wall 150. Simultaneously the thinner is urged through the gap 238 in between the wafer bottom side 232 and the table 40 and discharged in downward di¬ rection, whereby micro contamination and coating particles are removed and discharged. After ending this processing phase the wafer is moved upwardly to¬ wards the section 240 and thereafter section 242, see FIG's 7B and 7C, whereby this thinner 222 is removed by means of gaseous medium 100. After a continued drying αf the combination in the position 244, see FIG. 7D, the wafer is transferred to the following module 26, wherein ■ proximity bake of the applied coating takes place, see FIG. 8. After arrival of this wafer 12 in module 26 a minimal gap 250 is main¬ tained in between the lower chamber block 252 and this wafer as the result of a minimum supply of medium 100 through the supply channels 254, located in this block. Thereby a maximum height αf gap 256 is maintained in between the upper chamber block 258 and this wafer. In the shown configuration both chamber blocks 252 and 258 are heated. Thereby the temperature of the lower chamber block 252 is only slightly higher than that in the rest of the tunnel passageway, whereas in the upper chamber block 258 a temperature of for instance 200 C. is maintained. In this wafer position only a very gradual and moderate heating αf the wafer takes place. If the supply of medium 100 towards the lower gap 250 is increased, the wafer displaces away from this block 252 in the direction of the upper chamber block 258, with an accompanying rise of the temperature. After reaching the upper wafer position, as indicated in FIG. 9, a maximum transfer of heat from the upper chamber black 258 through the nar¬ row gap 256 towards this wafer takes place. Thereby in this gap warm medium, heated in section 258, is urged. These flows of medium whirl through the narrow gap and considerably contribute to the heat transfer. After reaching a sufficient drying level of the coating, applied on the wafer, for instance after 1 to 2 minutes, this wafer is gradually dis¬ placed downwardly toward the lower chamber block 252. Thereby the tempe¬ rature αf the wafer together with the coating is gradually reduced to slightly higher than that of this section 252 and whereupon this wafer can be transferred. Within the scope of the invention any other configuration of the blocks 252 and 258 is possible, with for instance no heating αf the lower chamber block 252. Furthermore, in this module aside the supply channels discharge chan— nels can be arranged. In another embodiment, see FIG. 10, the upper chamber block 258' is over some distance removed from the tunnel passageway 36. Thereby the lower chamber block 252' is coupled with the displacer 262. The wafer, under floating condition arrived above the block 252', is thereupon together with this block displaced toward this upper chamber block 258', whereby the temperature of this wafer gradually increases. Thereupon during a longer period of time this combination remains in a certain processing position, determined by a sensor, for a continued heat transfer, whereupon this combination is gradually displaced downward again. For an optimal wafer transfer under floating condition the lower cham¬ ber block 252' preferably is provided with both supply and discharge chan- nels 264 and 266. Far dehydration bake, as in module 20, during the processing in this oven according to. FIG. 10 a vacuum is maintained and whereby the cap 52 rests upon the rim 96 as seat, sealing off the processing chamber. After this processing this cap at first is displaced over a micro distance from this rim, whereby gaseous medium from the tunnel passageway 36 through the created micro gap is urged towards the processing chamber 268, whereby created micro contamination in the seal is removed from this gap and together with this gaseous medium discharged through the discharge of the module.- After a further opening of this cap the wafer is transferred to the following module. FIG. 23 shows a processing module 270. In the sidewall 272 αf the recessed lower tunnel block 32 the medium supply segments 274 and 276 are positioned, see also FIG's 24 and 25, and whereby the supply channels 278, 280 and 282 , located therein, extend into the inner wall of these segments. Through the respective ring shaped communication channels 284, 286 and 288 these channels are connected with the respective supply channels 290, 292 and 294. The 0-riπgs 296 and 298 provide the sealing-off between these medium supply systems. In the lower position of the cap 52 it fits in the recess αf the lo¬ wer tunnel block 32 with a cylindrical micro gap 300 in between. Furthermore, in the sidewall 302 of the cap 52 the circular recesses 304 are located. The functioning αf this module during the linear wafer transfer is shown in FIG's 15, 16 and 17. In FIG. 24 the wafer 12 is moved under floating condition over the lower chamber block 40. Thereby by means of the displacer 48 this lower chamber block is tilted, whereby the top wall 306 of this chamber block 40 at its exit side is brought under the level of the lower wall 308 of the tunnel passageway 36. By passing the sensor 82, see FIG. 15, it sends an impuls to the dis¬ placer 48 with a resulting further tilting of this chamber block 40. Thereby in the end phase of the wafer transfer this wafer is buffered by means αf flows of gaseous medium 100 from the upper supply channels 282. Another sensor 310 registers the arriving wafer 12 and sends a follo¬ wing impuls to the displacer 48 for an even further tilting of the lower chamber block 40. Thereby the front side 312 of the wafer is urged in down- ward direction along the gaseous cushion 314, also under the influence of its gravity, and whereby the wafer comes to a rest against the liquid buf¬ fer 316, fed with liquid medium 318 through the channels 280, see FIG. 25. Hereupon, by means of an impuls to displacer 46 the inlet side of the lower chamber block 40 is moved downward. Thereafter by means of a continued downward displacement αf the lower chamber block 40 by means αf both displacers 46 and 48 the wafer 12 is brought further downward along the film of liquid medium 322 towards the processing position 324. Due to the ideal guidance of the wafer 12, also by means of flows of gaseous medium from the sidewalls 104 and 106, see FIG. 15, this wafer fol¬ lows the successive displacements of the lower chamber block 40. Simultaneously already rotation of the wafer takes place by means of flows of gaseous medium from the inclined channels 326 of the lower cham¬ ber block 40. Thereupon by an impuls to the displacer 46 the cap 54 is moved to its lowest position, see FIG's 23 and 26, and whereafter the successive proces¬ sings of this wafer take place. The ultra narrow gap 300 sufficiently separates the interior of the module from the tunnel passageway 36 and whereby gaseous medium 100, fil- ling the upper section of this micro gap and supplied through the channels 282 and possibly from this tunnel passageway, is urged downward in an in radial direction uπinterupted flow through this gap for a discharge thereof together with the processing medium through discharge 328. By means of an ultra precise machining of the cooperating components of the module the width of the micro gap can be smaller than 30 micrometer. In combination with the relatively great length of this gap its flow resis¬ tance is that large, that in the tunnel passageway and in the supply chan¬ nels 282 a higher pressure can be maintained than in the processing cham¬ ber without an excessive consumption of gaseous medium. Thereby every increase in supplied processing medium simultaneously result in an enlarged discharge thereof. In addition, the liquid processing medium 334 from the processing gaps 330 and 332 aside the wafer is collec¬ ted in the roomy discharge 72 and buffer compartiment 336. After the processing by means of a number of successive liquid pro¬ cessing mediums 334 a removal αf the final liquid medium is accomplished by the wafer rotation combined with gaseous medium 100, supplied through all supply channels, including channels 278 and 280, see FIG, 27. Thereupon in an elevated position of the wafer the removal of residue liquid particles from these gaps 330 and 332 and drying of the wafer takes place by means of the supply of gaseous medium through the channels 280 and 282 and the possible heating of both chamber block 40 and cap 52. In FIG. 28 the process module 270' is provided with a modified medium supply block 340 and whereby a great number of micro supply channels extend into the inner wall 342 of this block. Cover 344 locks this block 340 and 0-ring 346 provides the sealing- off. The grooves 350 are positioned in the top wall of the supply block 340 and whereby their orifices 352 adjoin each other, providing an in radi- al direction uninterrupted supply of medium through these grooves towards the inner wall 342 αf this block, see also FIG's 29 and 30. The grooves 350 together with the micro channels are connected with the narrow cylindrical communication gap 356, see also FIG. 31, The distance between the micro channels 356 is larger than between the grooves 350, These channels function in the combined establishing and maintaining of the micro wet wall 358 and the urging of multiple micro flows towards the wafer edge 88 for a mechanic contact-free displacement thereof along the inner wall 342, The grooves 350 and channels 354 extend into the circular cαmmunica— tion grooves 360, located in the inner wall 342 of the supply block 340, At least one supply channel 362 for highly filtered gaseous medium and at least one supply channel 364 for highly filtered liquid medium ex¬ tend into the communication gap 356, Furthermore, the lower series of channels 366 are connected with at least one supply channel 368 for liquid processing medium. The operation of the module is as follows: In FIG, 29 the contact-free buffer stop of the wafer is accomplished by means of flows of medium 370 from the grooves 350 and channels 354. In FIG. 32 the floating wafer 12 together with the lower chamber block 40 are displaced toward their lowest buffer stop position and whereby flows of liquid medium 370 provide the contact-free guidance of this floa¬ ting wafer. In FIG. 33 the wafer is arrived in the processing section 372 and whereby flows of processing medium 374 from channels 366 maintain the con¬ tact-free centric position of the floating wafer with regard to the inner wall 342. In FIG. 34 the sealing-off section 376 of the cap 52 is moving down¬ ward and whereby this section with its conical wall section 378 is guided along the micro liquid film 380 of the wet wall 358. This is also accom¬ plished by means αf the flows of liquid medium from the grooves 350 and channels 354 in downward direction through the discharge passage 72 toward discharge 74, see also FIG. 28. In FIG. 35 the cap 52 has arrived in its lowest position and whereby in the processing section 372 at first processing of the wafer takes place by means of liquid processing medium 382. Thereby in the micro gap 384 between the supply block 346 and the sealing-off section 376 a high capillary medium lock 386 is established and maintained, whereby the supply pressure of the medium 370, supplied through channel 364, is that high, that during the processing at least al¬ most no processing medium, possibly containing contamination, is urged from the processing gaps 388 and 390 into this gap and processing medium cannot enter the tunnel passageway 36. In FIG. 36 pre-drying of the wafer takes place by means of gaseous medium 100 and whereby this medium through channel 362 is also urged into the communication gap 356. Thereby the combination of wafer 12, lower chamber block 40 and cap 52 is displaced upward over some distance, providing the supply of gaseous medium from the lower series of channels 354 into the processing chamber 392 and the gradual diminishing of the liquid medium lock 386. In FIG. 37 this combination of lower chamber block, wafer and cap is displaced further upward and whereby the liquid medium lock 386 is dissol¬ ved by means of flows of gaseous medium 100 from the grooves 350 and chan¬ nels 354. In addition, highly filtered gaseous medium 100 is urged from the tunnel passageway into the module in support of the drying. FIG. 38 shows this combination in their highest processing position with a completed drying of the wafer. Thereupon this combination of block 40, floating wafer 12 and cap 52 is brought to its wafer transfer position and whereby this wafer is carried off under floating condition toward the following module. Within the scope of the invention variations in structure and opera¬ tion of this module are possible and whereby this type of module in whether or not adapted form is applicable for any type of process module. Furthermore, any other type of in-line wafer processing is possible, including the following: stripping, spin-on dopant; plasma etching, reactive ion plasma etching, magnetron ion etching; metallization, planarizatioπ, sputtering; ion implantation, ion milling; laser annealing; chemical vapor deposition, including processing under low pressure and low temperature, plasma enhanced; physical vapor deposition; and oxidation. In addition, these processings can be combined with lithography modules, including in-line e-beam direct writing modules and x-ray micro lithography modules, Furthermore on the following systems: testing, measurement, inspection and wafer marking. Furthermore on wafer fabrication systems. Furthermore, the installation according to the invention can be con¬ nected with modules, wherein the above described processing systems take place with a batch of wafers. In FIG, 39 the main process module 400, wherein processing under high vacuum takes place, is connected with a supply process .installation for wafers and a discharge process installation 10" for wafers. Thereby in installation 10' the following processings take place: In module 18 the all-sided cleaning of the wafer 12, supplied from the tunnel passageway 402 through the gate module 16, and in the oven mo¬ dule 20 the removal under vacuum of the moisture remnants from the wafer, as for instance dehydration bake. Thereby any other series of processings with the use of the at least almost sealed-off processing chamber during the processing in accordance with the invention are possible, as for instance after the cleaning of the wafer a rinsing thereof. From the module 20 the wafer 12 is transferred into the transfer module 404, wherein it is carried over toward the take-over module 406 as part of this main process module 400. The operation of the transfer module 404 and take-over module 406 is as fallows: In the shown position of the take-over module 406 a wafer has arrived in module 404. The lower chamber block 40 is provided with a recess 408, wherein the arm 410 of module 406, with the vacuum chuck 412 mounted thereon, has arrived, see also FIG. 41. Thereby by means of the cap 52, brought downward close to rim 96, the tunnel passageway 36 is sufficiently sealed off from the chamber 414, located in the lower tunnel block 32. As thereupon by means of displacer 416 this chamber block 40 is moved downward, the wafer 12 ultimately comes to rest upon the chuck 412 and is suctioned thereon. Thereafter this arm 410 together with the chuck 412 and wafer 12 are moved in sideward direction through the recess 418, located in the sidewall 420 of the lower tunnel block 32, see FIG. 42. Thereupon this combination as part of robot 422 swivelβ toward the turntable 424 and whereby the wafer 12 arrives above the free seat 426. After lowering the arm 410 including chuck 412, the wafer 12 comes to rest on this seat and might temporary secured thereon. Thereupon this arm with chuck is returned to module 404 to take over the following wafer. During the wafer transfer toward module 404 in passageway 36 an over- pressure is maintained with regard to the pressure in the module 400. After the completed filling with wafers of the seats 426 in this mo¬ dule a high vacuum is drawn, whereafter the main processing takes place. During the wafer processing no further transfer of wafers take place through the then by means αf cap 52 hermetically sealed off tunnel passage- way 36. In this module any type of processing, as above described, is possi¬ ble. After ending the main processing in module 400 this module is pressu¬ rized and whereby the take-over module 430 successively removes a wafer from the periodically turning turntable 424 and transfers this wafer to¬ ward the installation 10". Thereby this installation mainly consists of the following modules: Transfer module 432, module 18, wherein an all-sided cleaning of the wafer takes place, module 20, wherein oven drying of this wafer is accom— pushed and gate module 16, Within the scope of the invention any other combination of processings or a single processing or only a wafer transfer under the application of the sealing-off system for these modules according to the invention is possible. The structural design and operation of this module 432 are similar to those of module 404, however with a displacement pattern of the robot 434 contrary to that of robot 422. After the combination of arm 434 with wafer 12 is brought toward its transfer position within chamber 436, the lower chamber block 40 moves up¬ ward and the wafer is brought to a floating condition above this chamber block 40. Hereupon cap 52 is moved upward and the wafer is carried off under floating condition toward module 18. In this module 18 mainly contamination, deposited on the wafer during its processing in the main process module 400, is removed, whereafter rin¬ sing and drying αf the wafer takes place. As cleaning agent any type αf medium in liquid, vapor or gaseous form is applicable, After the oven bake of the wafer in module 20 the wafer is transfer¬ red toward gate module 16 and therefrom carried off toward the tunnel passageway 438, Within the scope of the invention by means of the robot the wafers can also be transferred toward modules for testing, inspection and marking of the wafers and received therefrom. Furthermore, any position of the wafer in such module, even a face¬ down position thereof, with the main processing of the bottom side αf this wafer. Furthermore, any other structure and operation of the wafer transfer module 404 is possible. Furthermore, in the process modules during the processing differences in pressure from for instance a high vacuum to an overpressure or opposite might take place.

Claims: C L A I M S 1. Installation for wafer transport and processing, comprising: a) a lower block, containing at least supply channels for gaseous medium for wafer transfer under floating condition; b) in said lower block a chamber, wherein a lower chamber block is located; c) above said lower block a cap to cover said chamber; d) at least one displacer for a downward displacement of said cap from its wafer transfer position toward at least near said block and in return; and e) means for transfer a wafer toward and from an at least almost cen¬ tric position in between said cap and said lower chamber block. 2. Installation as in Claim 1 , comprising in said chamber around said lower chamber block a cylindrical discharge passage, connected with a lower positioned common discharge of a processing chamber as part of said chamber. 3. Installation as in Claim 2, comprising: a) a recessed upper block around said cap; and b) means for connecting said upper block with said lower block, 4. Installation as in Claim 3, comprising a tunnel passage in between said blocks adjacent the top of said processing chamber for wafer transfer toward and from said chamber, 5. Installation as in Claim 4, comprising means to transfer said wafer toward and from a processing position within said processing chamber. 6. Method of transport and processing of wafers in a process installa- tioπ, comprising: a) a transfer of a wafer toward a contact-free processing position within a processing chamber in between a lower chamber block, located in a recessed lower block and a cap, located in a recessed upper block; b) at least almost entirely sealing off said processing chamber; c) processing of said wafer; and d) a transfer of said wafer from said processing position. 7. Method as in claim 6, wherein in an elongated passage the transfer of a wafer under floating condition toward said processing chamber, and after the processing the transfer of said wafer under floating condition from said processing chamber toward an elongated passage. 8. Installation as in Claim 5, comprising at least one displacer for a downward displacement of said lower chamber block from its wafer transfer position toward its wafer processing position and in return. 9. Installation as in Claim 8, comprising means to displace said lower chamber block toward a downward processing position, whereby the top of said floating wafer is above said lowertunnel wall and the bottom of said wafer is underneath said lower tunnel wall. 10. Installation as in Claim 5, including means to stop the linear displacement of said floating wafer in an almost centric position above said lower chamber block. 11, Installation as in Claim 10, said means including the use of flows of gaseous medium, directed toward the wafer edge to buffer stop said floating wafer, 12. Method as in Claim 7, wherein at the end of the linear displacement of said wafer toward said processing chamber gaseous medium is directed toward the edge of said wafer and thereupon discharged through said cylin¬ drical discharge passage aside said lower chamber block to buffer stop said wafer and guide it to its position above said lower chamber block. 13. Method as in Claim 12, wherein an inner sidewall of said recessed cap cooperates with said flows of gaseous medium in providing said buffer stop for said wafer. 14. Installation as in Claim 11, wherein a series of supply channels for gaseous medium, arranged in radial direction aside said cylindrical discharge passage, extend toward said tunnel passage and means are included for an at least temporary urging gaseous buffer medium toward and along said wafer edge. 15. Installation as in Claim 14, wherein said supply channels are in¬ clined in direction of said processing chamber. 16. Method as in Claim 12, wherein flows of gaseous buffer medium from a series of inclined supply channels , extending toward said tunnel passage immediately aside said cylindrical discharge passage, are directed toward the edge of an arriving wafer. 17. Installation as in Claim 14, wherein the lower side of said cap is recessed, the diameter αf said recess being slightly larger than the diameter of said wafer and whereby the inner sidewall of said recessed cap cooperates with said flows of gaseous medium to establish said buffer stop. 18. Installation as in Claim 17, wherein in the lower ring shaped wall αf said cap a plurality of recesses are located, extending only toward said inner sidewall of said cap. 19. Installation as in Claim 18, wherein in said cap at least one supply channel of gaseous medium extends toward each of said recessed sections, 20. Method as in Claim 16, wherein during the wafer processing said cap in its lowest position is a micro distance removed from the corresponding rim of said lower tunnel block and whereby gaseous medium is urged from said tunnel passage through the established micro gap in between said cap and block toward the processing chamber and these flows of medium cooperate with flows of medium from said recessed sections of said cap. 21. Installation as in Claim 17, wherein at least one displacer is con¬ nected with the entrance side of said cap and at least one displacer is connected with the exit side αf said cap and means are included to tilt said entrance side of said cap to an open wafer transfer position and whe¬ reby said exit side remains close to a corresponding rim of said lower tunnel block. 22. Method as in Claim 16, wherein during the transfer of said wafer toward said process chamber the entrance side of said cap is tilted upward to its open wafer transfer position and gaseous buffer medium is urged from said supply channels αf said tunnel passage through the micro gap between the exit side of said cap and a corresponding rim of said lower tunnel block toward the edge of an arriving wafer to at least assist in said buffered wafer stop, 23, Installation as in Claim 14, comprising means to urge an in radial direction uninterrupted flow of gaseous medium from said tunnel passage through said micro gap in between said cap and lower tunnel block toward the edge of said wafer, positioned within said processing chamber, to main¬ tain a contact-free floating condition for said wafer during the processing and to assist in preventing processing medium from said processing chamber to enter said tunnel passage, 24. Installation as in Claim 5, wherein said cap as upper chamber block and said lower chamber block are provided with at least one central supply channel for medium and a series of branched off channels, connected with said supply channels and extending toward at least near the inner sidewall αf said cap and lateral outside of said chamber block. 25. Method as in Claim 6, wherein during said wafer transfer flows of gaseous medium from at least said central supply channel in said lower chamber block chamber block are directed toward said wafer to assist in the floating condition for said wafer in the end phase of its linear dis¬ placement. 26. Method as in Claim 25, wherein during said wafer processing in said processing chamber flows of processing medium from both central supply channels in cap and lower chamber block move in lateral direction through micro processing gaps in between said lower chamber block and wafer and in between cap and wafer toward said cylindrical discharge passage. 27. Installation as in Claim 24, wherein said lower chamber block is connected with a drive for rotation thereof and said floating wafer. 28. Method as in Claim 26, wherein during the processing the lower chamber block is rotated to provide a rotation of said floating wafer. 29. Installation as in Claim 24, wherein at least said lower chamber block is provided with supply channels, inclined in direction of wafer rotation to provide a rotation of said wafer during the processing. 30. Method as in Claim 26, wherein during the processing flows of me¬ dium, urged from inclined supply channels in at least said lower chamber block toward the lower side of said wafer, provide a rotation of said wa¬ fer at low rpm. 31. Installation as in Claim 24, wherein the machining of the instal¬ lation components, their alignment and travel of said loωer chamber block and cap by said displacers, using a stepper motor, are that precise, provi- ding that limited height of said micro gaps aside said wafer, that the com¬ bination of a wafer rotation at low rpm and the supply of a following processing.medium through at least both central supply channels of lower chamber block and cap provide a removal of preceding processing medium from said micro processing gaps aside said wafer in lateral direction toward said cylindrical discharge channel. 32. Method as in Claim 26, wherein the combination of wafer rotation at low rpm and the supply of a following processing medium through at least both central supply channels of said lower chamber block and said cap, mo¬ ving in lateral direction through said micro processing gaps aside said wafer toward said cylindrical discharge passage, provide an effective re¬ moval of preceding processing medium from said micro processing gaps and discharge into said cylindrical discharge passage. 33. Method as in Claim 32, wherein a first liquid processing medium is agressive and the following liquid processing medium, * replacing said first medium in said micro processing gaps aside said wafer, is less agressive, and so on, if required. 34. Method as in Claim 33, wherein the final liquid processing medium is easy to evaporate. 35. Installation as in Claim 31, wherein at least said central supply channel of said cap is connected with the highly filtered liquid and gaseous processing medium supply, 36. Method as in Claim 33, wherein said final liquid processing medium in said micro processing gaps is replaced by a following gaseous processing medium. 37, Installation as in Claim 35, wherein said processing chamber is structured that way, that during a cleaning processing of said wafer flows of cleaning agent , expelled from said upper processing gap aside said wafer and moving along said wafer edge toward said cylindrical discharge passage,in combination with flows of gaseous processing medium from said micro sealing-off gap in between cap and lower tunnel block toward and along said wafer edge provide a cleaning of said wafer edge, 38, Method as in Claim 36, wherein during a cleaning of said wafer flows of cleaning agent, expelled from said upper processing gap above said wafer and moving downward along said wafer edge toward said cylindrical discharge passage, in combination with flows αf gaseous processing medium from said micro gap in between said cap and lower tunnel block toward and along said wafer edge provide a cleaning of said wafer edge, 39. Installation as in Claim 35, comprising means to change the height of both processing gaps aside said wafer in accordance with the type of processing, pressure of the supplied processing medium and said medium. 40. Method as in Claim 36, wherein the height αf both processing gaps aside said wafer is changed in accordance with the type of processing, pressure of said supplied processing medium and said processing medium, 41, Installation as in Claim 8, comprising an upper chamber block, located within said cap and secured to said upper tunnel block, 42. Installation as in Claim 8, comprising an upper chamber block as part αf said cap. 43. Installation as in Claim 42, comprising means to displace upward said combination of upper chamber block and cap from its lowest processing position with a micro gap in between said cap and said lower tunnel block to an open wafer transfer position during the arrival and discharge of said wafer and in return. 44. Method as in Claim 7, wherein said cap, also functioning as upper chamber block, is displaced upward from its lowest processing position with a micro gap in between said cap and said lower tunnel block toward an open wafer transfer position during the arrival and discharge of said wafer. 45. Installation as in Claim 11, wherein in the top section of the ver- tical sidewall of said recess in said lower tunnel block at least one cy¬ lindrical medium supply ring is located, with an inside diameter slightly larger than the diameter of said wafer and containing a plurality of medium supply orifices in its inner sidewall, including means to buffer stop said wafer in its end phase of linear displacement toward said processing chamber and means to provide a lateral buffer for a contact-free processing of said wafer in said processing chamber, 46. Method as in Claim 12, wherein multiple micro flows from at least one series of micro medium supply channels, arranged in radial direction in a medium supply ring in the upper section of the sidewall of said pro¬ cessing chamber in said lower tunnel block, provide a medium buffer to stop an arriving wafer and a lateral medium buffer for a contact-free processing of said wafer in said processing chamber, 47. Method as in Claim 46, wherein said buffer medium is a gaseous medium, 48. Method as in Claim 46, wherein said buffer medium at least tempo¬ rary a processing liquid. 49. Installation as in Claim 45, wherein the wafer entrance side of said lower chamber block is connected with a displacer and the wafer exit side of said lower chamber block is connected with another displacer. 50. Installation as in Claim 49, comprising means to tilt downward said exit side of said lower chamber block in the end phase αf the -linear wafer displacement toward a buffer stop position, whereby flows αf medium from said buffer are directed toward the edge αf an arriving wafer under floa- ting condition to provide a buffer stop for said wafer, 51. Method as in Claim 46, wherein with an arriving wafer under floa¬ ting condition by means of a displacer the exit side of said lower chamber block is tilted downward to its wafer bufferstop position and flows of me¬ dium from orifices of said medium supply ring are directed toward the edge of said wafer to provide the buffer stop for said wafer. 52. Method as in Claim 51 , wherein after said buffer stop said entran¬ ce side of said lower chamber block is tilted downward toward a horizontal position of said block as wafer processing position, 53. Installation as in Claim 50, comprising means to move said lower chamber block further downward by means αf said displacers toward a lower processing position and whereby a plurality of supply channels, in lateral direction arranged in a supply ring, urge multiple micro flows of medium toward said wafer edge for a contact-free processing. 54. Method as in Claim 53, wherein said lower chamber block is moved further downward toward a lower processing position and whereby during the processing multiple micro flows of processing medium from a medium supply ring are directed toward the wafer edge for a cαπtact-free processing 0 55. Installation as in Claim 45, wherein said cap, functioning as up¬ per chamber block, includes a sealing—off section for said processing chamber at its lower end and means are included to guide said sealing-off section contact-free during its downward displacement from its wafer trans¬ fer position toward its lowest processing position within said processing chamber and in return and to establish and maintain a medium lock in the cylindrical micro gap in between said sealing-off section and the sidewall of said chamber in at least its wafer processing position. 56. Installation as in Claim 55, comprising means to lift said lower chamber block with floating wafer and cap after the processing with at leas liquid processing medium toward a processing section, wherein only gaseous medium is directed toward said wafer, including flows of gaseous medium from multiple orifices of a medium supply ring toward its edge for a con¬ tinued contact-free processing. 57. Method as in Claim 54, wherein after said processing of said wafer with at least liquid processing medium said lower chamber block together with said floating wafer an cap are moved upward toward a processing sec¬ tion, wherein only gaseous medium is urged toward all sides of said wafer for final removal of said liquid processing medium from said wafer. 58. Installation as in Claim 45, comprising means to adjust the amount of supplied medium in relation with the position αf said wafer and the type of processing. 59. Method as in Claim 46, wherein the amount of supplied buffer medium depends on the position of said wafer and the type of processing, 60. Installation as in Claim 45, wherein the orifices in said medium supply block are arranged so, that said buffer for at least part thereof is a wet wall. 61. Method as in Claim 48, wherein liquid medium is supplied by multi¬ ple orifices of said medium supply ring to at least temporary establish and maintain a circular wet wall. 62. Installation as in Claim 60, wherein said medium supply ring throug tapered sections extends from inner sidewall sections of said lower tunnel block toward a diameter, slightly larger than the -diameter of said wafer and medium supply orifices are arranged in both tapered ring sections. 63. Installation as in Claim 55, wherein the upper wall of said medium supply ring rests against an inner flange of said chamber recess of said lower tunnel block, in said upper wall a series of micro grooves are arran¬ ged in radial direction, extending into the inner wall of said ring, there¬ by adjoining each other, and on the other side extending toward a cylindri¬ cal communication channel in between said medium supply block and said lower tunnel block and underneath said series of grooves at least one series of micro medium supply channels are arranged in radial direction, also extending toward said communication channel. 64. Installation as in Claim 63, wherein a supply channel of liquid medium extends toward the lower end of said communication channel and a supply channel of gaseous medium extends toward the upper end of said communication channel. 65. Method as in Claim 46, wherein during the processing flows of me¬ dium from multiple series of micro supply channels, arranged in a medium supply ring, are urged toward a micro gap around a sealing-off section of said cap, extending into said process chamber far at least providing a medium lock in said micro gap, preventing processing medium to enter said tunnel passage. 66. Method as in Claim 65, wherein also during the processing by means of liquid processing medium gaseous medium is urged through all channels of said medium supply ring, 67. Method as in Claim 65, wherein during the processing by means of liquid processing medium a liquid medium lock is maintained in said micro gap around said sealing-off section and during the following processing with gaseous medium said liquid is gradually replaced by gaseous medium, 68, Installation as in one of foregoing Claims, comprising: a) a plurality of modules; b) in between said modules an interfacing tunnel passage; c) in the elevated sidewalls of said tunnel passage a plurality of orifices for urging gaseous medium toward the edge αf a wafer, passing through for a contact-free linear wafer transfer; and d) means to control the supply of said medium in relation to the wafer transfer. 69, Method as in one of foregoing Claims, wherein multiple flows of gaseous medium from orifices in Uhe elevated sidewalls αf said tunnel pas- sage toward a wafer during the linear displacement thereof from one module of the installation toward another support the contact-free floating con¬ dition of said wafer during said transfer. 70, Installation as in Claim 68, comprising: a) in front of each process module a sealable discharge channel in the center of said passageway; b) in said modules a sealable common discharge; and c) means to control the discharge of gaseous medium through said chan¬ nels in relation with the position of said wafer during its linear displa¬ cement. 71. Installation as in Claim 70, comprising: a) means to open said discharge channel in said tunnel passage in front of a receiver module and at least almost seal off the other discharge chan¬ nels during the first phase of the linear wafer transfer from a sender o- dule toward said receiver module; and b) means to seal off said discharge channel in said tunnel passage in front of said receiver module and open said discharge channel in said receiver module. 72. Method as in Claim 69, wherein: a) in the first phase of a wafer transfer from a sender module toward a receiver module of said installation a discharge channel in said tunnel passage in front of said receiver module is opened and all other discharge channels at least almost are closed; and b) in the end phase of said linear wafer transfer said discharge chan- nel in said tunnel passage in front of said receiver module is closed and said common discharge channel in said receiver module is opened. 73. Installation as in Claim 68, wherein, as seen from the wafer en¬ trance of said installation,the first process module is a cleaning module for an all-sided removal of micro particulates from said wafer. 74. Installation as in Claim 73, comprising sealing-off structures and controlling means in said supply and discharge of gaseous transfer medium to limit the volume of contaminated ambient air, entered through said tun¬ nel entrance said cleaning module. 75. Installation as in Claim 74, comprising means to prevent ambient air from outside said installation to enter said tunnel passage in front of said cleaning module. 76. Method as in Claim 69, wherein: a) in a cleaning module as first process module as first process modu¬ le an all-sided removal of particulates takes place from a wafer, entered said module through the tunnel entrance of said installation; b) the volume of contaminated ambient air, entered said module through said tunnel entrance, is limited; and c) contaminated ambient air is prevented to enter said tunnel passage in front of said cleaning module, 77, Installation as in Claim 74, comprising means to maintain an over¬ pressure of sub micro filtered inert gas in said installation with regard to the atmospheric pressure of the ambient air aotside said installation. 78. Method as in Claim 76, wherein in said installation an overpressure of supplied sub micro filtered inert gas is maintained with regard to the atmospheric pressure of the ambient outer air. 79, Method as in Claim 78, wherein in the lowest position of said cap an in radial direction uninterrupted flow αf gaseous medium is urged from said tunnel passage through the micro gap in between said cap and said lower tunnel block into said processing chamber to prevent liquid proces¬ sing medium to enter said tunnel passage, 80, Method as in Claim 78, wherein flows of gaseous medium from a se¬ ries of micro supply channels are urged into the established circular micro gap in between said cap and said lower tunnel block and whereby part there— of is urged into said tunnel passage in support of maintaining an over¬ pressure in said tunnel passage and the rest is urged through said micro gap into said processing chamber in an in radial direction uninterrupted flow to prevent at least liquid processing medium to enter said tunnel passage. 81. Installation as in Claim 77, whereby in the wafer receiving section and discharge sectio of said installation a lock module is located. 82. Method as in Claim 78, wherein a wafer, arriving in said installa¬ tion, at first is brought in a lock module, after arrival in said module the entrance gate of said module is closed and thereupon the exit gate is opened for transfer of said floating wafer toward a receiver module. 83. Installation as in Claim 81 , comprising means to enable said lock module to function as buffer chamber for a temporary storage of a wafer under floating condition. 84. Method as in Claim 82, wherein a wafer is brought from a sender module into a lock module, after its arrival the entrance gate is closed and thereupon said wafer is carried off. 85. Installation as in Claim 77, wherein said compartment between said cap and said upper chamber block is connected with a supply αf gaseous medium. 86. Method as in Claim 78, wherein during the wafer transfer gaseous medium from a compartment above said cap is urged through the cylindrical micro gap aside said cap toward said tunnel passage in support of the floa¬ ting condition for said wafer and during the processing gaseous medium is urged from said compartment through said gap toward said tunnel passage to support the condition of overpressure in said tunnel passage. 87. Installation as in one αf foregoing Claims, comprising a process module for deposition of a coating in liquid, vapor or gas phase on said wafer. 88. Method as in one of foregoing Claims, wherein in an at least almost enclosed process module the deposition of a coating in liquid, vapor or gas phase on said wafer takes place. 89. Method as in Claim 88, wherein said medium is a HMDS primer in vapor phase. 90. Installation as in Claim 87, wherein said module comprises a pro¬ cessing chamber, extending downward from said wafer transfer section to¬ ward a coating depostion section. 91. Installation as in Claim 90, comprising immediately underneath said wafer transfer section: a) a section, wherein deposition of a thiπrer takes place on at least the circular wafer edge; b) a cleaning section, wherein the removal of excessive coating from at least the circular wafer edge takes place; and c) a drying section. 92. Method as in Claim 88, wherein after arrival of a wafer on said lower chamber block the floating condition for said wafer temporary is ended, said lower chamber block together with said wafer is moved downward toward the coating deposition section and deposition of said coating takes place. 93, Method as in Claim 92, wherein after the arrival of said wafer at first said lower chamber block with wafer is moved downward to a section immediately underneath said wafer transfer section, wherein a layer of thin ner is deposited on the circular edge of said wafer, rotating at low rpm, 94, Installation as in Claim 91 , comprising means to move the supply orifice of coating from outside said chamber toward a deposition position above said wafer and in return, 95, Installation as in Claim 94, wherein said processing chamber is connected with a vacuum pump, 96, Installation as in Claim 94, wherein said processing chamber in- eludes a heating system to maintain in said chamber a temperature, as re¬ quired for said deposition of coating and the following drying. 97, Installation as in Claim 96, comprising means to direct during the wafer processing flows of warm gaseous medium from supply channels in said cap in downward direction along said wafer toward a lower cylindrical dis- charge channel, 98, Method as in Claim 92, wherein during the processing at least tem¬ porary flows αf warm gaseous medium from supply channels in said cap are directed downward along said wafer toward a lower cylindrical discharge passage. 99. Installation as in Claim 97, wherein said lower chamber block is a chuck, mounted on a motor for rotation of said wafer at an at least low rpm. 100. Method as in Claim 98, wherein during part of said processing said wafer rotates at low rpm. 101. Method as in Claim 98, wherein after said deposition of coating said combination of lower chamber block and said wafer is moved upward to¬ ward a cleaning/drying section for removal of excessive coating from at least the circular wafer edge and drying of said coating . 0 102. Method as in Claim 101, wherein in said cleaning section at first thinner is fed trough supply channels of said lower chamber block toward the lower side of said wafer and from orifices in the medium supply ring and thereupon said thinner is replaced by an inert gas, 103, Installation as in Claim 96, comprising a wet wall downward from said medium supply ring toward said common discharge, 104. Method as in Claim 98, wherein excessive coating is partly deposi¬ ted on a wet wall, extending downward from said medium supply ring and whe¬ reby said excessive coating together with the wet wall liquid is removed through a common discharge, 105. Installation as in Claim 96, comprising a wet wall as separation wall around said chuck for removal excessive coating and extending toward close to said coating deposition section. 106, Installation as in Claim 105, comprising means to move said combi¬ nation of lower chamber block and wafer downward toward a cleaning section and whereby thinner is urged through the top of said wet wall toward the outer lower side of said wafer and is removed from said wafer, 107, Method as in Claim 98, wherein in a cleaning section underneath said coating deposition section a flow of thinner from a wet wall under¬ neath said wafer around said chuck is directed toward the lower side of said wafer and thereupon is removed, 108, Installation as in Claim 99, comprising means to deposit coating in liquid phase on said wafer, suctiαned on said chuck, 109, Method a in Claim 93, wherein after deposition of a thinner on said circular wafer edge said wafer is suctioned an said chuck, this co - bination is moved downward toward its coating deposition position, deposi¬ tion of coating takes place and thereupon excessive coating is removed from - said wafer, temporary spinning at high rpm. 110, Installation as in Claim 103, comprising means to dry said wafer in at least near said wafer transfer position by means of flows of gaseous medium from said channels in said lower chamber block and cap and from said circular micro gap in between said cap and said lower tunnel block. 111. Method as in Claim 104, wherein after said cleaning a drying of said wafer and coating takes place in a position at least near said wafer transfer position by means of flows of gaseous medium from said channels in said lower chamber black and cap and from said circular micro gap in between said cap and said lower tunnel block, 112. Installation as in one of foregoing Claims, comprising a process module, wherein proximity bake of said wafer takes place and wherein in at least said upper chamberblock as section of said cap a heating element is located. 113. Installation as in Claim 112, comprising means for regulating the supply of gaseous floating medium toward at least said lower chamber block, whereby an upward displacement of said wafer provides a gradual increase in heat transfer from said upper chamber block toward said wafer and a downward displacement of said wafer results in a gradual decrease in tem¬ perature of said wafer. 114. Method as in one of foregoing Claims, wherein in a process module proximity bake of said wafer takes place, the heat is mainly transferred by the heated upper chamber block to the wafer and whereby an upward dis¬ placement of said wafer provides a gradual increase in said heat transfer and a downward displacement αf said wafer results in a gradual decrease in temperature of said wafer. 115. Installation as in Claim 112, wherein said upper chamber block is located upward away from said wafer transfer section and said lower chamber block is connected with a displacer for an upward displacement toward said upper chamber block for a controlled heat transfer tα said wafer, floating on said lower chamber block. 116. Installation as in Claim 115, wherein said processing chamber of said oven module is connected with a vacuum pump. 117. Method as in claim 114, wherein said heat transfer toward said wafer takes place under vacuum for dehydration bake. 118. Installation as in one of foregoing Claims, comprising means tα enable the following processings or a combination thereof in said proces- sing chamber: etching, including H2SO4 and HF processing and plasma enhanced etching; stripping, plasma stripping; dopant processing; megasonic cleaning, ultrasonic cleaning, plasma cleaning; various types of lithography; and oven bake, including microwave oven and hot plate oven. 119. Installation as in Claim 118, comprising means to enable in a module of said installation at least one of the following wafer handlings: wafer testing, inspection, measurement and marking. 120. Installation as in Claim 118, comprising an at least almost sea¬ lable wafer transfer module. 121. Installation as in Claim 120, comprising in addition a wafer take¬ over module, including an arm with vacuum chuck for suctioning said wafer thereon and whereby the sidewalls of both lower tunnel block and lower chamber block are recessed to enable the moving of said arm with chuck to¬ ward a centric take-over position within said lower chamber block and the withdrawal αf said arm with chuck and wafer from said module. 122. Method αf wafer transfer in a wafer transfer module αf said in- stallatioπ, including the following: a) a wafer is transferred through the tunnel passage to a floating centric position on top αf said lower chamber block; b) the floating condition for said wafer is ended; c) said lower chamber block with wafer and said cap are moved down— ward; d) said wafer comes to rest on said chuck and is suctioned thereon; e) said chuck together with said wafer is transferred from said mo¬ dule; and f) said lower chamber block and cap return to their upper wafer trans- fer position. 123. Installation as in Claim 121, comprising a module for main pro¬ cessing of said wafer. 124. Installation as in Claim 123, wherein said module is leak-free connected with the exit side of said tunnel passage. 125. Installation as in Claim 123, wherein said wafer take-over module is positioned within said module. 126. Installation as in Claim 123, comprising means to have the fol¬ lowing processings taking place: plasma etching, reactive ion plasma etching, magnetron ion etching, sputter etching; plasma stripping; chemical vapor deposition, CUD epitaxial, under low or high pressure; CUD deposition αf nitride, oxide or polysilicαne; physical vapor deposition; electron beam deposition; high pressure oxidation systems, low pressure oxidation systems; high temperature evaporation systems; ion beam deposition; plasma deposition; metallisation, plaπarisation, sputtering; laser annealing; high temperature oven bake; lithography systems, including steppers, in-line e-beam direct writing, x-ray micro litography; wafer testing, measurement, inspection and marking, 127. Installation as in Claim 123, comprising in addition a receiver installation, including a wafer transfer module as in Claim 121, with an opposite wafer transfer, 128, Method as in one of foregoing Claims, wherein in said installation at least one αf the processings is taken place as described in Claims 118 and 126,

Inventors: BARLAG RONALD JOHANNUS WILHELM, BOK EDWARD, BARLAG, RONALD, JOHANNUS, WILHELMUS, BOK, EDWARD
Applicants: BARLAG RONALD JOHANNUS WILHELM, BOK EDWARD, BARLAG, RONALD, JOHANNUS, WILHELMUS, BOK, EDWARD
Application year: 1987
Main classification: H01L21
IPC codes: H01L21