Electron beam exposure system

Abstract: In an electron beam exposure system controlled by a computer (2), the system includes: an electron optical device for generating electron beams and irradiating the beams to a sample (200) on a stage (220) through a plurality of electron lenses (140, 150, 180), a main deflection means (160), and sub deflection means (170), to form predetermined circuit patterns on the sample. The system also includes a position control device (10) controlling the driving of the stage (220) based on a stage position coordinate designated by the computer (2), detecting (via 9) an actual stage position coordinate, and calculating an error value between the designated stage position coordinate and the actual stage position coordinate, the error value being divided into two components, namely an upper bits portion having a relatively large error value and a lower bits portion having a relatively small error value, and a deflection control device (4) controlling the direction of the electron beams based on the main pattern data corrected by the upper bits portion and the sub pattern data corrected by the lower bits portion, and based on selected main and sub wait times determined by exposure and non-exposure timings.

Description: The present invention relates to an electron beam exposure system and method. Recently, there have been considerable developments of the electron beam exposure system used for exposing fine patterns during the process of manufacturing VLSIs. In a known electron beam exposure system, a step-and-repeat method is used for exposing fine patterns. In this step-and-repeat method, the exposure by the electron beam is performed at each "main field", which is an area to be exposed. One main field is equal to an effective chip area, and is divided into a plurality of subfields. In this method, after the exposure of one main field is finished, a stage is moved to a center position of the next field to be exposed and the exposure is started at each subfield in the next field, after adjusting the position of the electron beam. In this case, the position of the electron beam is readjusted by a main deflector consisting of deflection coils and a sub-deflector consisting of deflection electrodes, at each field. In this method, the exposure is interrupted during movement of the stage, and thus a loss of exposure time is incurred. JP-A-56-62322 by the present applicant discloses an electron beam exposure method in which a scanning position of the electron beam is compensated using a memorized marking position and a detected marking position of the stage. This method is in accordance with the preambles of accompanying claims 1 and 7. JP-A-56-104439, also by the present applicant, discloses an electron beam exposure method using low-speed large deflection means and high-speed low deflection means, the low-speed deflector being used when the beam is moved over a mesh region and the high-speed deflector being used within the mesh region. For controlling the low-speed deflector only high bits of position data are used and the lower bits are ignored; this is said to reduce the setting time. According to a first aspect of the present invention, there is provided an electron beam exposure method for a computer-controlled electron beam exposure system including an electron optics means for generating an electron beam and for irradiating said electron beam to a sample on a stage through at least one electron lens and deflection means to form predetermined circuit patterns on said sample, wherein said method comprises the steps of:- providing a position control means in said computer-controlled electron beam exposure system; controlling a drive of said stage based on a stage position coordinate designated by said computer; detecting an actual stage position coordinate; and comparing said designated stage position coordinate and said actual stage position coordinate; characterised by the further steps of:- dividing an error value between said designated and actual coordinates into an upper bits portion having a relatively large error value and a lower bits portion having a relatively small error value; inputting said upper bits portion to a main deflection means of said deflection means for correcting a direction of said electron beam to a relatively large extent, together with main deflection pattern data; inputting said lower bits portion to a sub-deflection means of said deflection means for correcting a direction of said electron beam to a relatively small extent, together with sub-deflection pattern data; exposing said predetermined circuit patterns on said sample by controlling the direction of the electron beam based on said main and sub-deflection pattern data corrected by said upper and lower bits portion respectively, during movement of said stage, so as to carry out continuous exposure. According to a second aspect of the present invention, there is provided an electron beam exposure system controlled by a computer, comprising an electron optics means for generating an electron beam and for irradiating said electron beam to a sample on a stage through at least one electron lens and deflection means to form predetermined circuit patterns on said sample, and position control means for controlling a drive of said stage based on a stage position coordinate designated by said computer, detecting an actual stage position coordinate; and comparing said designated stage position coordinate and said actual stage position coordinate; characterised in that the position control means further comprises:- dividing means for dividing an error value between said designated and actual coordinates into an upper bits portion having a relatively large error value and a lower bits portion having a relatively small error value, the position control means being arranged, to input said upper bits portion to a main deflection means of said deflection means for correcting a direction of said electron beam to a relatively large extent, together with main deflection pattern data, and to input said lower bits portion to a sub-deflection means of said deflection means for correcting a direction of said electron beam to a relatively small extent, together with sub-deflection pattern data; whereby said system exposes said predetermined circuit patterns on said sample based on said main and sub-deflection pattern data corrected by said upper and lower bits portion respectively, during movement of said stage, so as to carry out continuous exposure. Am embodiment of the present invention may provide an electron beam exposure system enabling a precise and high-speed continuous exposure by an electron beam during movement of the stage. Reference is made, by way of example, to the accompanying drawings, in which:- Fig. 1 is a schematic block diagram of an electron beam exposure system according to an embodiment of the present invention; Fig. 2 is a detailed block diagram of the system shown in Fig. 1; Fig. 3 is a view explaining an upper bits portion and a lower bits portion based on an error value; Figs. 4A and 4B are views explaining exposure steps in sub fields and main fields; Fig. 5 is a flowchart explaining control steps of the system shown in Fig. 2; Fig. 6 is a view explaining one example of the upper and lower bits portions; Fig. 7 is a graph explaining exposure timing and a blanking signal; Fig. 8 is a partial block diagram of the electron beam exposure system according to another embodiment of the present invention; and Fig. 9 is a partial block diagram of the electron beam exposure system according to still another embodiment of the present invention. An electron beam exposure system embodying the present invention will be explained in detail hereinafter. In Fig. 1, reference number 1 denotes a body in the electron beam exposure system. Three electron lenses 140, 150 and 180, a deflection coil 160, deflection electrodes 170, a stage 220, and the like are provided in an inner space of the body as an electron optical means. This inner space is usually maintained in a high vacuum state. Reference number 2 denotes a central processing unit (CPU) of a computer controlling all units of this system. Reference number 3 denotes a control unit for an electron gun 110, the three electron lenses 140, 150 and 180, an alignment coil 120, and the like. Provided as a deflection control means are, an electron beam control unit 4, a blanking unit 5, a main deflector control 6, a sub-deflector control 7, and a current amplifier 8. Provided as a position control means are, a position detector 9, a position control unit 10, and a stage drive unit 11. Reference number 12 denotes an input/output device, 13 an external storage unit, and 14 a buffer memory. In the electron beam exposure system according to this embodiment, a precise and high speed exposure is achieved through the provision of the improved electron beam control unit 4 and the improved position control unit 10, as explained in detail hereinafter. Basically, in this system, the position data for the stage is transferred from the CPU 2 to the position control unit 10. The stage drive unit 11 is driven by a control signal from the unit 10, and the stage 220 is moved to the designated position. The position of the stage 220 is detected by the position detector 9, and a difference between a designated position (target position) and an actual position is detected by the position control unit 10 as an error value. This error value is fed back to the main deflector control 6 and the sub deflector control 7, and the direction of the electron beam is adjusted by these deflector controls 6 and 7 based on the error value. In this case, the error value is divided into two components, i.e., a relatively large error component and a relatively small error component. The large error component is transferred to the main deflector control 6 and the small error component is transferred to the sub deflector control 7, as explained in detail hereinafter. As shown in Fig. 2, the electron beam control unit 4 comprises: a pattern generator 41 for generating main and sub circuit pattern data; main and sub correction circuits 42, 43 for correcting position data of the circuit patterns by the error value; and main and sub wait time circuits 44, 45 for selecting exposure and non-exposure periods in a blanking signal pulse. The position control unit 10 comprises: a designated value register 101 for inputting the stage position data to be moved from the CPU; two registers 102, 103 for inputting the data for the main and sub deflector controls 6 and 7 from the pattern generator 41; an adder 104 for adding these data of the registers 101, 102 and 103; a subtractor 105 for calculating the error value between the designated position and actual position of the stage 220; an unit conversion circuit 106 for unit conversion of a laser wavelength unit to a pattern bit data unit; a register 107 for inputting the converted pattern bit data; and an error value division circuit 108 for dividing the above error bit data into two components, i.e., an upper bits portion and a lower bits portion. The position detector 9 comprises a laser distance measuring device 91 for detecting the position of the stage 220 and a register 92 for inputting the detected value. The stage drive unit 11 comprises a drive circuit 111 and a control circuit 112. The blanking unit 5 comprises a blanking deflector 51 and a control circuit 52. The input/output device 12 applies an initial start command to the CPU and displays various data. The external storage unit 13 is, for example, a magnetic disk or a magnetic tape. The buffer memory 14 is a memory for temporarily storing pattern data to be exposed. The main deflector control 6 comprises a main D/A convertor 61 and a main amplifier 62. The sub deflector control 7 comprises a sub D/A convertor 71 and a sub amplifier 72. In Fig. 3, (X SA , Y SA ) is a stage position coordinate (X-Y axis) designated by the CPU, and (X SB , Y SB ) is an actual stage position coordinate detected by the position detector 9. The coordinate (X SA , Y SA ) is output from the adder 104, and the coordinate (X SB , Y SB ) is output from the register 92. Accordingly, ΔX represents the error value between X SA and X SB , and ΔY represents the error value between Y SA and Y SB . The error values ΔX and ΔY are divided into the upper bits portion UB and the lower bits portion LB. The lower bits portion LB carries an error value of, for example, less than 20.48 µm, and the upper bits portion UB carries an error value of, for example, more than 20.48 µm. The large error value of the upper bits portion UB is fed back to the main deflector control 6 and the small error value of the lower bits portion LB is fed back to the sub deflector control 7. The values ΔX and ΔY are calculated in the subtractor 105 and divided into two components, i.e., the upper and lower bits portions, by the division circuit 108. Therefore, when the error value is relatively small, the direction of the beam is adjusted by the sub deflector control 7, and when the error value is relatively large, the direction of the beam is adjusted by the main deflector control 6. In Figs. 4A and 4B, F₁ and F₂ are main fields, S a sub field, and M a marker. The main field (F₁ , F₂) is for example constituted by an area approximately 5 mm square, i.e., the size of an IC chip. The sub field is for example constituted by an area approximately 100 µm square. The exposure by the electron beam is performed at each sub field S, and the beam direction in the sub field S is controlled by the sub deflector control 7 and the beam direction between each sub field is controlled by the main deflector control 6. That is, the beam can be swung to a large extent, as shown by the slant line area (a x b), by the main deflector control 6. As explained above, although the sub deflector control 7 can carry out a precise and high speed swing of the electron beam, only a narrow area can be covered thereby. The main deflector control 6, however, can swing the beam over a wide area, but can not swing the beam at a high speed achieved by the sub deflector control 7. In Fig. 4A, the stage is moved in the X direction (P₁ → P₄). The exposure of the pattern is started from the subfield S and carried out along the route R₁ (solid line) in the main field F₁, using the main and sub deflector controls 6 and 7. When the exposure in the main field F₁ is finished, the exposure is carried out for the main field F₂, as shown by the dotted line. To ensure the compatibility between the stage consecutive movement exposure method and the conventional step-and-repeat method, the stage position coordinate in the main field F₁ is set to P₁ (X S1 , Y S1 ). Further, as the last pattern position data in the main field F₁, the main data is given by P₁P₂ (X M1 , Y M1 )and the sub data P₂P₃ (x S1 , y S1 ). Next, in case of the step-and-repeat method, the stage position coordinate to be moved is P₄ (X S2 , Y S2 ), the first main data is P₄P₅ (X M2 , Y M2 ), and the sub data is P₅P₆ (x S2 , y S2 ) in the main field F₂. The stage position coordinate when the exposure in the main field F₁ is completed by the stage consecutive movement method is, for exampe, P₇ (X S1 + X M1 , Y S1 ). At this time, the main data is P₇P₂ (O , Y M1 ) and the sub data is P₂P₃ (x S1 , y S1 ). In order to expose the main field F₂, the stage designated position coordinate is P₈ (X S2 + X M2 , Y S2 ), the main data is P₈P₅ (O , Y M2 ), and the sub data is P₅P₆ (x S2 , y S2 ). The stage position data P₄ (X S2 , Y S2 ) is stored in the register 101. The data P₄P₈ (X M2 , O) to be added to the stage position data, although it is the main data, is stored in the register 102. The main data P₈P₅(O , Y M2 ) and the sub data P₅P₆ (x S2 , y S2 ) are transferred from the pattern generator 41 to the data correction circuits 42 and 43. In this case, since the present stage position is P₇, although the designated position is P₈, the stage position error value is given by the distance (X S2 + X M2 - X S1 - X M1 , Y S2 - Y S1 ) This error value is divided into the upper bits portion UB and the lower bits portions LB and transferred to the data correction circuits 42 and 43. n the main field F₂, when the main data is changed, the content of the register is rewritten. In general, the stage position data (X S , Y S ), the main data (X M , Y M ), and the sub data (x S , y S ) can be divided as follows. X S = X S11 + X S12 + X S13 Y S = Y S11 + Y S12 + Y S13 X M = X M11 + X M12 + X M13 Y M = Y M11 + Y M12 + Y M13 x S = x S11 + x S12 + x S13 Y S = y S11 + y S12 + y S13 Based on the above data, new stage position data (X SN , Y SN ), main data (X MN , Y MN ), and sub data (x SN , Y SN ) are given as follows. X SN = X S11 + X M11 + X S11 Y SN = Y S11 + Y M11 + Y S11 X MN = X S12 + X M12 + X S12 Y MN = Y S12 + Y M12 + Y S12 x SN = x S13 + x M13 + x S13 y SN = y S13 + y M13 + y S13 In the new stage position data (X SN , Y SN ), the data (X S11 , Y S11 ), (X M11 , Y M11 ) and (x S11 , y S11 ) are stored in the registers 101, 102 and 103. The main data (X MN , Y MN ) and the sub data (x SN , y SN ) are transferred from the pattern generator to the data correction circuits 42 and 43. In Fig. 4A, when the stage consecutive movement is carried out, it is necessary to deflect the beam to the X direction by the maximum deflection value a when the stage position is P₉. A method for reducing this deflection value is shown in Fig. 4B. In this case, the sub field is divided into for example, narrow four portions 1 ○ to 4 ○ the X direction. The exposure is carried out in sequence form 1 ○ to 4 ○ by consecutive movements of the stage. As shown in the flow chart of Fig. 5, the pattern data to be exposed is transferred from the external storage unit 13 to the buffer memory 14, under the control of the CPU 2 (step 1). The designated stage position coordinate (X SA , Y SA ) to be moved is calculated in the CPU 2, and the resultant data is stored in the register 101 (step 2). The output of the adder 104, i.e., the resultant data calculated in the CPU 2, is input to the stage drive control circuit 112, and the stage 220 is moved to the designated position coordinate (step 3). The present position of the stage 220 is detected by the laser distance measuring device 91 and this data is stored in the register 92 (step 4). The difference between the designated position and the present position, i.e., the error value of the stage 220 position (ΔX, ΔY), is calculated in the subtractor 105 (step 5). The unit of this error value is converted from the laser wavelength unit to the pattern data unit by the conversion circuit 106 (step 6). For example, in the case of an He-Ne gas laser, 1 LSB is equal to 0.0052733 µm. This value can be found by the formula 1 LSB = 0.6328/N : where the value 0.6328 is a wavelength of the laser, N is the division number of one wavelength of the laser (for example, N = 120), and LSB is the least significant bit. In the pattern data, the LSB value is, in general, set to 0.01 µm, and therefore, the unit conversion circuit 106 converts the former (0.0052733 µm) to the latter (0.01µm) as one LSB. Each of the error values (ΔX and ΔY) is divided into the upper bits portions UB and the lower bits portion LB in the division circuit 108 (step 7) as shown in Figs. 3 and 6. For example, the lower bit portion is constituted by 11 bits and the upper bit portion is constituted by 15 bits, as shown in Fig. 6. In Fig. 6, the low bits portion LB is input to the sub deflector control 7 and upper bits portion UB is input to the main deflector control 6 (step 8). In this case, the value 10.88 µm is fed back to the sub deflector control 7, and the value 348.16 µm is fed back to the main deflector control 6. The error value UB and the main deflection pattern data (MDPD) are input to the data correction circuit 42 and the MDPD is corrected by the UB (step 9). This correction of the main deflection pattern data is carried out for a gain value, an offset value, a rotation value, a hexagonal value, and the like, in a known method and the error value UB is added to these values. The same correction as the above is performed by the data correction circuit 43 for the sub deflection pattern data (SDPD) and the error value LB, and the corrected data is input to the wait time circuits 44 and 45. That is, the output data D1 of the correction circuit 42 is input to the wait time circuit 44, and the output data D2 of the correction circuit 43 is input to the wait time circuit 45 (step 10). In this case, the wait time WT corresponding to the movement distance (X MN1 - X MN2 ) by the main deflector 6 is selected in the wait time circuit and this wait time is returned to the pattern generator 41. The output of the pattern generator 41 is held during this wait time (step 11). This is explained in Fig. 7 as the exposure timing. In Fig. 7, the ordinates are a main deflector output voltage (M-OUT), a sub deflector output voltage (S-OUT), and a blanking signal (BLK), and each of the abscissae is a time (T). When the level of the blanking signal BLK is V₁ (=OV), the exposure is performed; this exposure time is about 1 µsec. When the level of the blanking signal BLK is V₂ (=approximately 30V), the exposure is not performed. This non-exposure period SWT is equal to the wait time of the sub deflector control 7. The other non-exposure period MWT is equal to the wait time of the main deflector control 6. In general, the exposure time is 1 µsec, the wait time SWT is 0.1 µsec, and the wait time MWT is 20 µsec. As obvious from the graph, the setting time to the next exposure is changed in correspondence with the pattern jumping distance. Therefore, since the wait time MWT of the main deflector control 6 is long and that of the sub deflector control 7 is short, the exposure can be performed in the sub field and main field. The main deflection data MDD is input to the main deflection D/A converter 61 and the sub deflection data SDD is input to the sub deflection D/A converter 71 (step 12). The analog data is amplified by the main amplifier 62 and the sub amplifier 72 and applied to the main deflection coil 160 and the sub deflection electrode 170 to control the direction of the electron beam (step 13). In Fig. 8, reference number 81 denotes an error detector. Since the response by the main deflector control 6 is, in general, slow compared with that of the sub deflector control 7, a response delay portion of the stage error value occurs in the main deflector control 6, and this response delay portion is detected by the error detector 81 and applied to the sub deflector control 7. In Fig. 9, another example of the use of main deflection electrodes 161 is shown. In this embodiment, the operation is the same as that Fig. 8. As will be understood, in general any combination of deflection coils and deflection electrodes can be employed as the main deflector and sub deflector.

Claims: An electron beam exposure method for a computer-controlled electron beam exposure system including an electron optics means for generating an electron beam and for irradiating said electron beam to a sample (200) on a stage (220) through at least one electron lens (140, 150, 180) and deflection means (6, 7) to form predetermined circuit patterns on said sample, wherein said method comprises the steps of:- providing a position control means (10) in said computer-controlled electron beam exposure system; controlling a drive of said stage (220) based on a stage position coordinate (X SA , Y SA ) designated by said computer (2); detecting an actual stage position coordinate (X SB , Y SB ); and comparing said designated stage position coordinate and said actual stage position coordinate; characterised by the further steps of:- dividing an error value (ΔX, ΔY) between said designated and actual coordinates into an upper bits portion (UB) having a relatively large error value and a lower bits portion (LB) having a relatively small error value; inputting said upper bits portion (UB) to a main deflection means (6) of said deflection means for correcting a direction of said electron beam to a relatively large extent, together with main deflection pattern data (MDPD); inputting said lower bits portion (LB) to a sub-deflection means (7) of said deflection means for correcting a direction of said electron beam to a relatively small extent, together with sub-deflection pattern data (SDPD); exposing said predetermined circuit patterns on said sample (200) by controlling the direction of the electron beam based on said main and sub-deflection pattern data (MDPD, SDPD) corrected by said upper and lower bits portion (UB, LB) respectively, during movement of said stage (220), so as to carry out continuous exposure. An electron beam exposure method as claimed in claim 1, wherein said exposure step includes controlling the exposure of said electron beam based on selected main and sub-wait times determined by an exposure and non-exposure timing. An electron beam exposure method as claimed in claim 1 or 2, wherein said exposure step more specifically comprises temporarily storing a position coordinate for movement of said stage; temporarily storing main and sub-pattern data; adding together said position coordinate and said main and sub-pattern data; calculating said error value (ΔX, ΔY) between said designated stage position coordinate and said actual stage position coordinate; converting a laser wavelength unit to a pattern data unit; and dividing said error value into said upper bits portion (UB) and said lower bits portion (LB). An electron beam exposure method as claimed in claim 1, 2, or 3 further comprising the step of detecting a response delay of said error value occurring in said main deflection means (6) and applying said response delay to said sub-deflection means (7). An electron beam exposure method as claimed in any preceding claim, further comprising providing the main deflection means (6) and the sub-deflection means (7) in the form of a deflection coil or deflection electrodes. An electron beam exposure method as claimed in claim 5, wherein the main deflection means (6) are provided in the form of a deflection coil and the sub-deflection means (7) are provided in the form of deflection electrodes. An electron beam exposure system controlled by a computer, comprising an electron optics means for generating an electron beam and for irradiating said electron beam to a sample (200) on a stage (220) through at least one electron lens (140, 150, 180) and deflection means (6, 7) to form predetermined circuit patterns on said sample, and position control means (10) for controlling a drive of said stage (220) based on a stage position coordinate (X SA , Y SA ) designated by said computer (2), detecting an actual stage position coordinate (X SB , Y SB ); and comparing said designated stage position coordinate and said actual stage position coordinate; characterised in that the position control means (10) further comprises:- dividing means (108) for dividing an error value (ΔX, ΔY) between said designated and actual coordinates into an upper bits portion (UB) having a relatively large error value and a lower bits portion (LB) having a relatively small error value, the position control means being arranged to input said upper bits portion (UB) to a main deflection means (6) of said deflection means for correcting a direction of said electron beam to a relatively large extent, together with main deflection pattern data (MDPD), and to input said lower bits portion (LB) to a sub-deflection means (7) of said deflection means for correcting a direction of said electron beam to a relatively small extent, together with sub-deflection pattern data (SDPD); whereby said system exposes said predetermined circuit patterns on said sample (200) based on said main and sub-deflection pattern data (MDPD, SDPD) corrected by said upper and lower bits portion (UB, LB) respectively, during movement of said stage (220), so as to carry out continuous exposure.

Inventors: KAI JUN-ICHI, KAWASHIMA KENICHI, YASUDA HIROSHI, YASUTAKE NOBUYUKI, KAI, JUN-ICHI, KAWASHIMA, KENICHI, YASUDA, HIROSHI, YASUTAKE, NOBUYUKI
Applicants: FUJITSU LTD, FUJITSU LIMITED
Application year: 1987
Main classification: H01J37
IPC codes: H01J37, H01L21, G05B15