GAS LASER DEVICE

Abstract: The gas laser includes a discharge tube (1), a pair of electrodes (2a,2b), a high-frequency power source (3), a reactance (4), a number of reflectors (5,6,7) and an output reflector (8). The discharge tube (1) contains a laser medium gas, which generates a laser beam (9) as it is excited by a high-frequency discharge. The high-frequency power source (3) semiconductor components and generates a frequency around 2MHz. The distance (d) between the electrodes is selected to be 4cm. which ensures the electron capturing phenomenon at the frequency.

Description: Technical Field The present invention relates to a gas laser device, and more particularly to a gas laser device including a disharge tube shaped for increased oscillation efficiency. Background Art Increasing the oscillation efficiency in gas laser devices is an important technical target. Techniques for achieving this target include the generation of positive discharge resistance characteristics due to electron capture in a high-frequency electric discharge, and the lack of a cathode effect. The electron capture needs to be caused by increasing the frequency of an electric discharge power supply. It is highly difficult to provide a high-output, high-frequency power supply. In order to achieve electron capture, i.e., to prevent electrons from reaching side walls of a discharge tube, it is necessary that the distance d between electrodes in the discharge tube be considerably greater than the distance ℓ that electrons move per half of the frequency, as indicated by the following equation: ℓ = 2 µ E/ω = Ve/π f<< d where ℓ ...the distance which electrons move, µ ...electron mobility, E ...electric field intensity, ω ...angular velosity of the power supply, f ...frequency of the power supply, Ve...speed of electrons, about 8 x 10⁶ cm/sec, and d ...distance between side walls of the discharge tube. Assuming that d = 2 cm and the minimum distance for the electrons not to collide with the side walls is ℓ = d, f is calcuated as follous: f = 1.24 MHz. Therefore, a considerably high frequency is required. Vacuum tubes may be employed in a high-frequency power supply. However, since the service life of vacuum tubes is only about 3,000 hours, it would be problematic to construct a practical gas laser device employing such a high-frequency power supply. Therefore, solid-state devices such as semiconductors or the like should desirably be employed to construct a high-frequency power supply. In a large-output range, however, the output frequency of a currently available high-frequency power supply constructed of solid-state devices is about 2 MHz, and hence the above requirement cannot be satisfactorily met. Specifically, assuming that the frequency of a high-frequency power supply is 2 MHz, then ℓ/d = 0.62 Disclosure of the Invention It is an object of the present invention to provide a gas laser device which will solve the above problem and has a discharge tube shaped for increased oscillation efficiency without substantially increasing the frequency of a power supply. To solve the above problems, there is provided in accordance with the present invention a gas laser device in which a laser medium gas is circulated in a discharge tube and a laser beam is generated from the gas excited by a high-frequency electric discharge, comprising: a high-frequency power supply serving as an electric discharge power supply; the distance between electrodes of said discharge tube being increased by folding the path of the laser beam and being selected such that electrons will not collide with side walls of the discharge tube based on the frequency of said high-frequency power supply and electron mobility; a plurality of reflecting mirrors for reflecting the laser beam along a folded path and amplifying the laser beam. Since the distance between the electrodes is increased by folding the path of the laser beam, the distance that can be traversed by electrons at a constant frequency is increased, thus bringing about electron capture. Moreover, inasmuch as the distance which the laser beam moves axially in the discharge tube is increased, the amplification degree is also increased that much. Brief Description of the Drawings FIG. 1 is a cross-sectional view of an embodiment of the present invention; and FIG. 2 is a schematic view showing the appearance of the device shown in FIG. 1. Best Mode for Carrying Out the Invention An embodiment of the present invention will hereinafter be described in specific detail with reference to the drawings. FIG. 1 shows an embodiment of the present invention. Denoted at 1 is an electric discharge tube in which a laser medium gas is circulated and an electric discharge is produced to excite the laser medium gas for amplifying a laser beam. Denoted at 2a, 2b are electrodes, the electrode 2a being connected to a high-frequency power supply and the electrode 2b to ground. The high-frequency power supply, designated at 3, for generating a high frequency for electric discharges is connected to the electrode 2a through a matching reactor 4. The high-frequency power supply 3 comprises semiconductor devices such as FETs or the like. Since no vacuum tubes are employed in the high-frequency power supply, it is not necessary to replace vacuum tubes, and the maintenance procedure is simple. The high-frequency power supply 3 has an output frequency of about 2 MHz. Designated at 5, 6, 7 are reflecting mirrors for reflecting the laser beam. An output mirror 8 passes and outputs a portion of the laser beam, and reflects the remainder of the laser beam. The reference numeral 9 represents an optical axis of the laser beam. In conventional discharge tubes with no folded laser beam path, the value of d is about 2 cm. With the foled laser beam path structure as shown, however, the distance between the electrodes is doubled or 4 cm. As a result, assuming that the output frequency of the high-frequency power supply 3 is 2 MHz, ℓ/d = 0.31, and the high-frequency power supply 3 employing semiconductor devices can sufficiently bring about electron capture. More specifically, the distance d between the electrodes of the discharge tube can be selected to be sufficiently large so that electrons will not collide with the side walls of the discharge tube 1, i.e., electron capture will be caused, at the frequency f of the high-frequency power supply 3. By reflecting the laser beam 9 along the folded path, the distance traversed by the laser beam 9 in the discharge tube 1 is twice that in the conventional structure, and hence the amplification degree can be increased that much. FIG. 2 schematically shows the structure of FIG. 1. Identical parts are denoted by identical reference numerals. As shown in FIG. 2, the discharge tube 1 is of a rectangular configuration. The discharge tube 1 is made of ceramics or the like. The electrodes 2a, 2b are made of metal and joined to the discharge tube 1. While the discharge tube 1 is rectangular in shape in the above embodiment, it may be of another shape such as an elliptical shape. The number of folds of the laser beam path is shown as being 2, but may be increased by increasing the number of reflecting mirrors used, according to the value of the distance d between the electrodes. With the present invention, as described above, since the number of reflecting mirrors is increased according to the distance between the electrodes for reflecting the laser beam along the folded path to amplify the laser beam, electron capture can be caused by the frequency of the high-frequency power supply which can be generated by semiconductor devices. The oscillation efficiency of the laser beam is increased because the distance traversed by the laser beam in the discharge tube is increased.

Claims: 1. A gas laser device in which a laser medium gas is circulated in a discharge tube and a laser beam is generated from the gas excited by a high-frequency electric discharge, comprising: a high-frequency power supply serving as an electric discharge power supply; the distance between electrodes of said discharge tube being increased by folding the path of the laser beam and being selected such that electrons will not collide with side walls of the discharge tube based on the frequency of said high-frequency power supply and electron mobility; a plurality of reflecting mirrors for reflecting the laser beam along a folded path and amplifying the laser beam. 2. A gas laser device according to claim 1, wherein said discharge tube is rectangular in shape. 3. A gas laser device according to claim 1, wherein the number of folds of the folded path is 2. 4. A gas laser device according to claim 1, wherein said high-frequency power supply comprises a spmiconductor device.

Inventors: KARUBE, NORIO
Applicants: FANUC LTD.
Application year: 1987
Main classification: H01S3
IPC codes: H01S3