SEMICONDUCTOR LASER WITH MESA STRIPE WAVEGUIDE STRUCTURE AND MANUFACTURING METHOD THEREOF

Abstract: There is disclosed a semiconductor layer (10) which can emit a continuous laser beam in a visible wavelength range. The laser (10) has an n-GaAs substrate (12). On this substrate (12), an n-InGaAℓP cladding layer (18), an active layer (20), and p-InGaAℓP cladding layers (22, 24) are sequentially formed, thus forming a double hetero-structure. A mesa-shaped, upper cladding layer (26) is provided, defining a laser beam-guiding channel. A thin p-InGaAℓP contact layer (30) and a mesa-shaped, p-GaAs contact layer (32) are formed on the top surface of the upper cladding layer (26). The n-type semicon­ ductive, current-blocking layers (34-1, 34-2) cover the slanted sides of the upper, mesa-shaped cladding layer (26) and also the contact layer (32). They are made of the same n-GaAs compound semiconductor material as the substrate (12).

Description: The present invention relates to a semiconductor laser and, more particularly, to a semiconductor laser which operates at room temperature in a fundamental transverse-oscillation mode to continuously emit visible light. As is generally known, semiconductor lasers have a multilayer structure, each including a semiconductive substrate, cladding layers of a GaAℓAs, an active layer of GaAs, a current-blocking layer of GaAs, and the like. One of the cladding layers is formed above the active layer. A channel groove is cut in the upper surface of this cladding layer for blocking a current and guiding the light generated in the laser. To manufacture such a multilayer laser, it is required that the recrystallization of each layer be strictly controlled to impart uniform and good crystallinity to the layer. Unless this requirement is fulfilled, the laser will have but a low oscillation stability and, hence, will fail to operate reliably. Recently, a vapor-phase growing method called "metal organic chemical vapor deposition (MOCVD)" has been developed to take the place of the liquid-phase epitaxy (LPE) method which has been used for some time. The MOCVD method can substantially satisfy the conditions required in recrystallizing the layers of the semiconductor laser. It is, therefore, preferred as a method which can produce a greatly reliable semiconductor laser. This method, however, is disadvantageous in that crystals having a high light-emitting efficiency must be grown on that surface of a layer in which a channel groove is cut. Highly reliable GaAℓAs lasers having channel grooves have yet to be reported. Semiconductor materials for lasers, such as InGaAsP, InGaAℓAs and InGaAℓP, are now attracting attention. This is because semiconductor lasers made of these materials emit laser beams with such a broad wavelength range that they can be used in optical communication systems or in optical data storage systems. These semiconductor materials can indeed be formed by the vapor-phase growth method. However, no reports have been made of a semiconductor laser which is made of InGaAℓAs and InGaAℓP or the like, and which can continuously emit stable visible light at room temperature in a fundamental transverse-oscillation mode. The reason is because these materials must be formed under strictly controlled conditions in order to have a crystal lattice well aligned with that of the substrate. In practice, it is extremely difficult to successfully control these conditions. Were a semiconductor laser made of any one of these materials, it would have its basic characteristic degraded quickly (for example, within about one hour), and would thus become useless. JP-A-59-119884 discloses a GaAs/InGaAsP laser comprising a double heterostructure defined by a first cladding layer, an active layer, a second cladding layer and a third mesa-shaped cladding layer formed on the second cladding layer. It is therefore an object of the present invention to provide a new and improved semiconductor laser which is formed of a specific semiconductor material such as InGaAℓAs, InGaAℓP or the like, and which can continuously emit stable visible light in a fundamental transverse oscillation mode. Another object of the invention is to provide a new and improved method for manufacturing a semiconductor laser which is formed of a semiconductor material such as InGaAℓAs, InGaAℓP or the like, and which can continuously emit stable visible light in a fundamental transverse oscillation mode. In accordance with the above object, the present invention is addressed to a semiconductor laser which emits a continuous laser beam in the visible wavelength range. The laser comprises a semiconductor substrate of a first conductivity type, made of a semiconductor compound of group-III-elements and group-V-elements, a first semiconductor cladding layer of the first conductivity type positioned above the substrate, and an active layer of undoped semiconductor material formed on the first cladding layer. A plurality of semiconductor cladding layers of a second conductivity type is formed on the active layer, thereby forming a double hetero-structure. These cladding layers include a second cladding layer formed on the active layer, and a third cladding layer formed on the second cladding layer. The third cladding layer is mesa-shaped, and has slanted sides. It defines a waveguide channel for laser light. The first to third cladding layers are made of a semiconductor compound including group-III-elements and group-V-elements. A semiconductor contact layer of the second conductivity type is formed on the third cladding layer. The contact layer is formed to have a mesa stripe with slant sides. A semiconductive, current-blocking layer covers the slant sides of the third cladding layer and also the slant sides of the contact layer. The current-blocking layer is made of a semiconductor compound including III-elements and V-elements, being substantially the same as the material of the substrate. The invention, and its object and advantages, will become more apparent in the detailed description of a preferred embodiment, presented below. In the detailed description of a preferred embodiment of the invention, given below, reference will be made to the accompanying drawings in which: Fig. 1 is a perspective view (not drawn to scale) of a semiconductor layer diode capable of stably operating in a transverse mode, in accordance with one preferred embodiment of the invention; Figs. 2A to 2F are cross-sectional views of multilayer structures obtained in the main steps of manufacturing the diode of Fig. 1; Fig. 3 is a perspective view (not drawn to scale) of a semiconductor layer diode capable of stably operating in a transverse mode, in accordance with another preferred embodiment of the invention; and Fig. 4 shows a perspective view (not drawn to scale) of a semiconductor layer diode capable of stably operating in a transverse mode, in accordance with still another preferred embodiment of the invention. There is shown in Fig. 1 of the drawings a transverse mode stabilized semiconductor laser diode with a double-heterostructure and a mesa stripe waveguide structure, which is designated generally by the numeral 10. As shown in Fig. 1, laser diode 10 has n type GaAs substrate 12 of high impurity concentration. On one side of substrate 12 are disposed, one above another, n type GaAs buffer layer 14, n type InGaP buffer layer 16, n type InGaAℓP cladding layer (or, first cladding layer) 18, undoped InGaP active layer 20, and cladding layer unit (or, second cladding layer) 28 consisting of p type InGaAℓP layers 22, 24 and 26. First cladding layer 18, active layer 20 and second cladding layer 28 constitute a double hetero-structure. P type InGaAℓP layer 24 (hereinafter called "p-InGaAℓP layer") contains aluminum in a lower composition ratio than other p-InGaAℓP layers 22 and 26, and therefore serves as an etching stopper in manufacturing laser diode 10, as will be described later in detail. Layer 26 is formed on layer 24 to have a mesa stripe shape characterized by two slant sides 26a and 26b. Layer 26 thus provides a linear projection or rib, defining a mesa-shaped waveguide channel. Thin contact layer 30 made of p-InGaAℓP is formed on the upper surface of mesa-shaped cladding layer 26. Another contact layer 32 of p-GaAs is formed on thin contact layer 30. Contact layer 32 is shaped in a mesa stripe, and is narrower than cladding layer 26. Current-blocking layers 34-1 and 34-2 are formed on cladding layer 28, such that they cover mesa-shaped cladding layer 26, thin contact layer 30 and the slanted sides of mesa-shaped contact layer 32. Neither layer 34-1 nor layer 34-2 cover the upper surface of contact layer 32. Current-blocking layers 34-1 and 34-2 contact those surfaces of mesa-shaped cladding layer 26 which face the waveguide channel. They also contact layers 30 and 32. Layer 32 and layers 34-1 and 34-2 can perform the current-blocking function. Further, thick p-GaAs contact layer 36 is formed to cover current-blocking layers 34 and on the upper surface of mesa-shaped contact layer 32. Since layer 36 is made so thick that its upper surface is flat, laser diode 10 has a square cross-section. Flat metal layer 38 is formed on upper contact layer 36. A flat metal layer 40 is formed on the lower surface of substrate 12. Hence, metal layers 38 and 40 sandwich the laser diode, and function as the terminal electrodes of laser diode 10. Laser diode 10 thus constructed emits a continuous-wave visible laser light such that upper contact layer 32 and current-blocking layers 34-1 and 34-2 carry out the current blocking operation, and p-InGaAℓP cladding layer 26, which defines the mesa-shaped channel, guides the laser light generated within diode 10. Since buffer layer 16 is interposed between GaAs buffer layer 14 and the InGaAℓP hetro-structure, it can improve the crystallinity of the hetero-structure. Thin contact layer 30 is provided to reduce the electric contact resistance between cladding layer 26 and contact layer 32. Thin contact layer 30 is comprised of semiconductor material having a band gap greater than that of contact layer 32 lying over layer 30, but smaller than that of layer 26 lying under layer 30. The band gap may be varied within thin contact layer 30. In this case, it is preferable that the band gap width of contact layer 30 is equal to that of layer 26 in the interface region between layers 26 and 30 and to that of layer 32 in the interface region between layers 30 and 32, and changed gradually in the other region of layer 30 in the vertical direction. Substrate 12 is generally made of a III-V semiconductor compound. First to fourth cladding layers 18, 22, 24 and 26, which form a double hetero-structure junction, are made of semiconductor compounds each including a plural kinds of III-elements and at least one V-element. Typically, these cladding layers are made of In x Ga 1-x-y As y P (0 ≦ y < 1), In x Ga 1-x-y Aℓ y P (0 ≦ y ≦ 1), or In x Ga 1-x-y Aℓ y As (0 ≦ y ≦ 1). Current-blocking layers 34-1 and 34-2 are formed of a semiconductor compound which is substantially the same as the III-V semiconductor compound forming substrate 12. When substrate 12 is made of GaAs, current-blocking layers 34-1 and 34-2 are made of Ga 1-z Aℓ z As (0 ≦ z ≦ 1). (In the embodiment described above, layers 34 are made of GaAs.) On the other hand, when substrate 12 is made of InP, current-blocking layers 34 must be formed of InP. Laser diode 10 having the mesa-shaped waveguide structure was made on an experimental basis by the inventors hereof, as will be explained with reference to Figs. 2A to 2F. First, n type GaAs substrate 12 having crystal plane (100) and doped with silicon in the concentration of 3 x 10¹⁸ cm⁻³ was prepared. The MOCVD method was then performed at atmospheric pressure or a lower pressure, using a gas mixture of a methane-series III-group organic metal (e.g., trimethyl indium, trimethyl gallium or trimethyl aluminium) and a hydride of V-group metal (e.g., arsine or phosphine), at atomospheric pressure or a lower pressure. As a result, buffer layers 14 and 16, cladding layer 18, active layer 20, cladding layers 22, 24 and 26, and contact layers 30 and 32 were formed on substrate 12, one upon another in the order illustrated in Fig. 1, thereby obtaining a wafer of double hetero-structure. First buffer layer 14 was an n type GaAs layer doped with selenium in the concentration of 3 x 10¹⁸ cm⁻³ and having a thickness of 0.5 µm. Second buffer layer 16 was an n type InGaP layer doped with selenium in the concentration of 3 x 10¹⁸ cm⁻³ and having a thickness of 0.5 µm. First cladding layer 18 was an n type In 0.5 Ga 0.2 Aℓ 0.3 P layer doped with selenium in the concentration of 1 x 10¹⁸ cm⁻³ and having a thickness of 1.5 µm. Active layer 20 was an n type In 0.5 Ga 0.5 Aℓ layer having a thickness of 0.1 µm. Second cladding layer 18 was a p type In 0.5 Ga 0.2 Aℓ 0.3 P layer doped with magnesium in the concentration of 2 10¹⁸ cm⁻³ and having a thickness of 1.0 µm. Third cladding layer 24 was a p type In 0.5 Ga 0.4 Aℓ 0.1 P layer doped with magnesium in the concentration of 2 x 10¹⁸ cm⁻³ and having a thickness of 0.02 µm. Fourth cladding layer 26 was a p type layer of In 0.5 Ga 0.2 Aℓ 0.3 P, doped with magnesium in the concentration of 2 x 10¹⁸ cm⁻³ and having a thickness of 1.4 µm. Contact layer 30, which serves as an intermediate contact layer, was a p type In 0.5 Ga 0.4 A 0.1 P layer having a thickness of 0.01 µm. Contact layer 32 was a p type GaAs layer having a thickness of 0.5 µm. Both contact layers 30 and 32 were doped with magnesium in the concentration of 2 x 10¹⁸ cm⁻³. It should be noted that in the generic symbol of the double hetero-structure, In x Ga 1-x-y Aℓ y P (0 ≦ y ≦ 1), y is preferably more than 0.8. After the double hetero-structure had been formed using the MOCVD method, a linear stripe film 40 of silicon oxide (SiO₂) was formed on contact layer 32, i.e., the topmost layer of the hetero-structure, by decomposing silane gas and by performing the conventional photoetching. This film was 0.1 µm thick and 5 µm width. Fig. 2A shows the cross-sectional view of the multilayer wafer thus obtained. Thereafter, contact layer 32 was subjected to selective etching, by using SiO₂ film 40 as a mask, thereby forming a GaAs mesa-shaped stripe 32' having a width of about 3 µm, as illustrated in Fig. 2B. As a result, thin contact layer 30 underlying layer 32 was partially exposed. Mesa-shaped stripe 32' was used as a mask in the subsequent process of selectively etching the InGaAℓP layers 26 and 30. Layers 26 and 30 were etched away, except for those portions lying under mesa-shaped strip 32', thereby exposing third cladding layer 24. Mesa-shaped InGaAℓP stripe 26' having a thickness of about 5 µm was therefore formed. An etchant such as a solution of sulfuric acid or phosphoric acid was used in this selective etching, at a temperature of 40 to 130°C. The wafer having two mesa-shaped stripes 32' and 26' was subjected to selective side-etching. Mesa-shaped stripe 32' made of GaAs was side-etched, becoming stripe 32" narrower than mesa-shaped stripe 26' as is illustrated in Fig. 2D. The etchant used in the selective side-etching was a solution consisting of 28% ammonia water, 35% aqueous solution of hydrogen peroxide, and water in the volume ratio of 1 : 30 : 9. Current-blocking layers 34-1 and 34-2, i.e., an n type Ga 1-z Aℓ z As (0 ≦ z ≦ 1) layer, were formed on the structure of Fig. 2D by MOCVD method under a reduced pressure, by using trimethyl gallium and arsine. These were n-GaAs current-blocking layers which had a thickness of 0.5 µm and were doped with selenium in the concentration of 5 x 10¹⁸ cm⁻³. More specifically, layers 34-1 and 34-2 were formed in the following manner. The unfinished product was placed in an envelope. While introducing diluted phosfine gas into the envelope, the temperature within the envelope was raised to 700°C. Then, the supply of phosphine gas was stopped, and arsine gas was introduced into the envelope. Upon lapse of about one second from the start of supplying arsine gas, trimethyl gallium organic metal gas was introduced into the envelope, thereby forming current-blocking layers 34-1 and 34-2 on only second contact layer 24 and mesa-shaped layers 26′, 30′ and 32′. No GaAs layers were formed on SiO₂ mask layer 40. As a result, such a structure as is shown in Fig. 2E was obtained. Thereafter, SiO₂ mask layer 40 was removed, and n-GaAs layer 36 was formed by the MOCVD method on both current-blocking layers 34-1 and 34-2. As is shown in Fig. 2F, the upper surface of layer 36 was flat. Layer 36 functions as the third contact layer of laser diode 10. It had a thickness of 3 µm and was doped with magnesium in the concentration of 5 x 10¹⁸cm⁻³. Then, electrode 38 (Fig. 1) was deposited on n-GaAs layer 36, and electrode 40 (Fig. 1) was deposited on the lower surface of substrate 12. Both electrodes 38 and 40 were made of a gold-zinc alloy or a gold-germanium alloy. As a result, a laser wafer was manufactured. The wafer was cleaved, thereby producing an InGaAℓP laser diode of double-hereto structure, which had a resonanator length of 250 µm. The laser diode was was found to emit a laser beam having a wavelength ranging from 650 nm to 680 nm, almost all visible rays. The diode was tested for determining its characteristics. It had good fundamental characteristics; its threshold current was 90 mA, and its differential quantum efficiency was 20% for each side. In addition, it exhibited a good current-output characteristic, wherein the output linearly increased up to 20 mW or a little more as the drive currrent was increased. Further, it was demonstrated that optical images at the far and near points of the visual field of this laser diode exhibited an ideal unipeak characteristic. This implies that a stable mode control had been successfully achieved on the laser diode. It should be noted that current-blocking layers 34-1 and 34-2 are not limited to n type Ga 1-z Aℓ z As (0 ≦ z ≦ 1) layers. For example, layers 34-1 and 34-2 may be made of InP when substrate 12 is made of InP and the double-hetero junction is an In x Ga 1-x-y Aℓ y As (0 ≦ y ≦ 1) layer. A laser diode of this structure was also manufactured, and was tested. This laser diode also exhibited good characteristics, and a stable mode control could be conducted on it. In InGaAℓP laser diode 10 having a mesa-shaped waveguide structure, which has been described above, current-blocking layers 34-1 and 34-2 are made of the same III-V semiconductor compound (i.e., GaAs) as substrate 12. Therefore, it is possible to form current blocking layers 34 of high quality wherein the generation of a lattice defect or dislocation can be minimized even at the stepped portions of the mesa stripe waveguide channel thereof. A laser diode, which has excellent characteristics in the fundamental single transverse oscillation mode and astigmatism and high operational reliability can thus be obtained by using a specific semiconductor material, such as InGaAℓP or InGaAℓAs, which is very difficult to deposit to form a uniform layer, though it can emit laser light having a wavelength over a broad range. The use of this particular material makes it possible to employ a known method to manufacture a laser diode which is sufficiently reliable, and can, thus, be practically used, unlike the conventional laser diodes. In other words, the invention can solve the problems inherent in the manufacture of semiconductor lasers, which the persons skilled in the art have long known, but failed to overcome. The inventors have made semiconductor lasers of two types, each type having the known structures, in order to to demonstrate the drawbacks inherent therein. Each of the lasers of the first type was made in the following way. At a pressure lower than atmospheric pressure, a gas mixture of a methane-series III-group organic metal (i.e., trimethyl indium, trimethyl gallium or trimethyl aluminium) and a hydride of V-group metal (e.g., arsine or phosphine) was thermally decomposed, thereby forming a mesa-shaped InGaAℓAs or InP layer on an InP substrate. Then, the same gas mixture was thermally decomposed, thus forming an InGaAℓAs or an InP layer on the mesa-shaped InGaAℓAs or InP layer and also on the InP substrate. Each of the lasers of the second type was made in the following manner. A mesa-shaped InGaAℓP or GaAℓAs layer was formed on a GaAs substrate in a method similar to the method described in the preceding paragraph. Then, a mesa-shaped layer was formed on the InGaAℓP or GaAℓAs layer. Thereafter, an InGaAℓP layer or an GaAℓAs layer was formed on the mesa-shaped layer and also on the GaAs substrate. In the structures of the first type, InP could easily be grown on the InGaAℓAs or InP layer, but it was difficult to grow InGaAℓAs on the InGaAℓAs or InP layer. In the case of the layers of the second type, GaAℓAs could easily be grown on the GaAℓAs or InGaAℓP layer, but it was difficult to grow high-quality material, InGaAℓP, on the GaAℓAs or InGaAℓp layer. Next, an X-ray diffraction analysis was conducted on these layers. The results were that, in the sample using the combination of InGaAℓAs and InGaAℓAs layers, a clear difference was observed between the lattice constant of the mesa-shaped layer at the slanted side and that at the flat top portion thereof. Inevitably, many dislocations were observed in the InGaAℓAs layer covering the slanted sides of the mesa-shaped layer. The difficulty of re-growth of InGaAℓP or InGaAℓAs on the mesa-shaped layer may be explained as follows. In the case of InGaAℓAs or InGaAℓP, the dislocation can be attributed to the fact that the lattice constants of its components, InP, GaP and AℓP are greatly different from that of GaAs with which InGaAℓP must be lattice-matched. This lattice constant difference makes it harder to manufacture the multilayered structure of a semiconductor laser diode. As a result, when such a semiconductor material is re-grown on the mesa-shaped layer, the crystallizing process of the slanted sides of the mesa-shaped layer is greatly different from that at the flap top portion, thereby causing a mismatch in the semiconductor crystal structure thus obtained. As has been pointed out, an InP layer could easily be grown on the mesa-shaped layer of InGaAℓAs or InP, and GaAℓAs could easily been formed on the mesa-shaped layer of InGaAℓp or GaAℓAs. This is because InP contains a V-element (P) like the material (InP) of the substrate with which InP must be lattice-matched well, and GaAℓAs contains a V-element (As) like the material (GaAs) of the substrate with which GaAℓAs must be lattice-matched. Further, according to the present semiconductor laser, the laser channel is made of mesa-shaped cladding layer 26, and cladding layer 26 is electrically connected to electrode layer 38 by contact layers 30, 32 and 36 formed one upon another. Cladding layer 26 can, therefore, guide light very effectively, thereby raising the light emission efficiency of the laser. Since thin contact layer 30 is formed on the top surface of mesa-shaped layer 26, thereby providing an appropriate band gap between layer 26 and contact layer 32, it can lower the electrical resistance between layers 26 and 32. Furthermore, since upper contact layer 36 has a flat top surface, it has a sufficiently low contact resistance and can minimize the deforming of electrode layer 38 formed on it. These features can help to improve the characteristics and reliability of the semiconductor laser. As has been stated, it is possible with the method of this invention to manufacture InGaAℓP laser diode 10 having a mesa-shaped waveguide, by using the ordinary processing, not employing fine-processing technology. The method can, therefore, easily manufacture laser diode 10 with a high reproducibility. More specifically, since the waveguide of laser diode 10 is formed by selective etching (See Fig. 2D), and the current-blocking structure is formed by the MOCVD method (See Fig. 2E). The selective etching and MOCVD method are the processes commonly used today in manufacturing semiconductor devices, and neither have serious drawbacks. Therefore, diode 10 can be produced with a high yield and a high productivity. In the embodiment described above InGaAℓP (or GaAℓAs) and GaAs layers constitute an optical waveguide and a current-blocking structure. To this end, another semiconductor material InGaAℓP must be re-grown on the exposed surfaces of the GaAs substrate and mesa-shaped InGaAℓP layer. Generally, it is usually hard for InGaAℓP and GaAs layers to prevent the surface of a GaAℓAs or InGaAℓP layer from being damaged by the evaporation of P and As occurring as an unfinished product is heated. In the method of the invention, however, SiO₂ film 40, which covers the top surface of GaAs layer 32', can prevent P and As from evaporating, and the GaAℓAs or InGaAℓP layer from being damaged. Either GaAℓAs or InGaAℓP can be re-grown to have a smooth, flat top surface, by heating the unfinished product in an atmosphere of phosphorus. Still further, in the above embodiment, mesa-shaped contact layer 32 is fabricated to have a width of 3 µm at the top, which is smaller than the width (5 µm) of SiO₂ layer 40 as shown in Fig. 2F. Due to this fact, those portions of layers 34-1 and 34-2 which are located around contact layer 32, forming a current path, along with layer 34, have flat top surfaces. Thus, contact layer 36, formed on layers layer 32, 34-1 and 34-2, can have a flat top surface, and electrode layer 38 can easily be formed on contact layer 36. Fig. 3 shows laser diode 50 having a mesa-shaped waveguide, of a second embodiment of the present invention. The same elements as those of the first embodiment are designated by the same numerals as in Fig. 1, and will not described in detail. Laser diode 50 has no member equivalent to thick contact layer 36 (Fig. 1). Electrode layer 52 is, therefore, formed directly on current-blocking layers 34-1 and 34-2 surrounding mesa-shaped contact layer 32. Electrode layer 52 is electrically and directly coupled to contact layer 32. In laser diode 50, too, current-blocking layers 34-1 and 34-2 are made of the same material as that of substrate 12, i.e., a III-V compound semiconductor, more precisely Ga 1-z Aℓ z As (0 ≦ z ≦ 1). In this instance, layers 34-1 and 34-2 are made or n-GaAs. Without thick contact layer 36, laser diode 50 can be manufactured in less steps, which will ultimately reduce the cost of diode 50. Fig. 4 shows laser diode 60, or a third embodiment of the present invention. The same elements as those of the first embodiment are designated by the same numerals as used in Fig. 1, and will not described in detail. In the third embodiment, current-blocking layer 62 covers mesa-shaped cladding layer 26 and mesa-shaped contact layer 32. Layer 32 has a flat top surface. It is made of the same material as that of substrate 12, i.e., a III-V compound semiconductor, more precisely Ga 1-z Aℓ z As (0 ≦ z ≦ 1). SiO₂ layer 40 (Fig. 2) is removed before current-blocking layer 62 is formed by re-growth of Ga 1-z Aℓ z As. A p-type semiconductor diffusion layer 64 is formed in current-blocking layer 62 by diffusing or ion-implanting a p-type dopant such as Zn into layer 62, and is so deep that it overlaps mesa-shaped contact layer 32. Electrode layer 38 is formed on the flat top surface of layer 62. Diffusion layer 64 is, therefore, interposed between mesa-shaped contact layer 26 and electrode layer 38, and reduces the electrical resistance between layers 26 and 38.

Claims: A semiconductor laser (10) for emitting a continuous laser light of visible wavelength range comprising a semiconductor substrate (12) of a first conductivity type made of III-V compound semiconductor material, a first semiconductor cladding layer (18) of the first conductivity type provided above said substrate (12), an active layer (20) of semiconductor material formed on said cladding layer (18), and a plurality of semiconductor cladding layers of a second conductivity type formed on said active layer (20), thereby forming a double hetero-structure, whereby said plurality of cladding layers include a second semiconductor cladding layer (22) formed directly on said active layer (20), and a third semiconductor cladding layer (26) which is formed on said second cladding layer (22) and is mesa-shaped to have slanted sides (26a, 26b) defining a waveguide channel, said first to third cladding layers (18, 22, 26) being made of compound semiconductor material comprising group-III-elements and group-V-elements, and that said laser (10) further comprises: a first semiconductive contact layer (32) of the second conductivity type formed on said third cladding layer (26), being mesa-shaped, and having slanted sides; and a semiconductive, current-blocking layer (34-1, 34-2) covering the slanted sides (26a, 26b) of said third cladding layer (26) and also the slanted sides of said first contact layer (32), said current-blocking layer (34-1, 34-2) being made of III-V compound semiconductor material which is substantially the same as the III-V compound semiconductor material of said substrate (12). The semiconductor laser according to claim 1, characterized in that said double hetero-structure comprises compound semiconductor material comprising a plurality of group-III-elements and one group-V-element. The semiconductor laser according to claim 2, characterized in that said double hetero-structure is made of one material selected from the group consisting of In x Ga 1-x-y As y P, 0 ≦ y < 1 ; In x Ga 1-x-y Aℓ y P, 0 ≦ y ≦ 1 ; and In x Ga 1-x-y Aℓ y As, 0 ≦ y ≦ 1. The semiconductor laser according to claim 3, characterized in that coefficient "y" is 0.8 or greater. The semiconductor laser according to claim 3, characterized in that said substrate is made of GaAs, and said current-blocking layer is made of Ga 1-z Aℓ z As, 0 ≦ z ≦ 1. The semiconductor laser according to claim 5, characterized in that said substrate and said current-blocking layer are made of GaAs. The semiconductor laser according to claim 3, characterized in that said substrate and said current-blocking layer are made of InP. The semiconductor laser according to claim 1, characterized by further comprising: a second semiconductive contact layer (36) of the second conductivity type covering the top surfaces of said first contact layer (32) and said current-blocking layer, and being thick enough to have a flat top surface. The semiconductor laser according to claim 8, characterized by further comprising: a third semiconductive contact layer (30) of the second conductivity type covering the top surfaces of said third cladding layer (26), and interposed between said third cladding layer (26) and said first semiconductive contact layer (32). The semiconductor laser according to claim 9, characterized in that said first and second contact layers (32, 36) are made of said III-V compound semiconductor material like said substrate (12). The semiconductor laser according to claim 10, characterized in that said third conductive contact layer (30) is made of compound semiconductor material comprising a plurality of III-elements and one V-element, like said first, second and third cladding layers, and reduces the rate of variation of the band gap between said third cladding layer (26) and said first semiconductive contact layer (32) to thereby lower the electrical resistance therebetween. The semiconductor laser according to claim 11, characterized by further comprising: a fourth cladding layer (24) of the first conductivity type formed on said second cladding layer (22) and contacting said third cladding layer (26) and said current-blocking layer (34). The semiconductor laser according to claim 12, characterized in that said first to fourth cladding layers (18, 22, 24, 26) are made of a material selected from group consisting of In x Ga 1-x-y Aℓ y P, 0 ≦ y ≦ 1 ; and In x Ga 1-x-y Aℓ y As, 0 ≦ y ≦ 1. The semiconductor laser according to claim 13, characterized in that coefficient "y" is 0.8 or greater. The semiconductor laser according to claim 14, characterized in that said substrate is made of GaAs, and said current-blocking layer is made of Ga 1-z Aℓ z As, 0 ≦ z ≦ 1. The semiconductor laser according to claim 15, characterized in that said current-blocking layer is made of GaAs. The semiconductor laser according to claim 14, characterized in that said substrate and said current-blocking layer are made of InP. A method of manufacturing a semiconductor laser for emitting a continuous laser beam of visible wavelength range comprising the steps of: forming a double hetero-structure on a semiconductor substrate (12) of a first conductivity type made of a group III-V compound semiconductor material by means of metal organic chemical vapor deposition, said double hetero-structure comprising a first semiconductive cladding layer (18) of the first conductivity type, an active layer (20) of semiconductor material formed on said first cladding layer, a second semiconductive cladding layer (22) of a second conductivity type formed on said active layer, and a third semiconductive cladding layer (26) of the second conductivity type formed on said second cladding layer and made of compound semiconductor material comprising a plurality of group III-elements and one group V-element; forming a first semiconductive contact layer (32) of the second conductivity type on said double hetero-structure; forming an insulative layer (40) on said first contact layer; applying selective etching to said first contact layer (32) by using said insulative layer (40) as a mask, thereby forming a mesa-shaped layer (32′) having a flat top surface and slanted sides; applying selective etching to said third cladding layer (26) by using said mesa-shaped layer (32′) as a mask, thereby forming a waveguide channel and also a mesa-shaped layer (26′) having a flat top surface and slanted sides; and forming a semiconductive, current-blocking layer (34, 62) of the first conductivity type on the resultant structure, said current-blocking layer (34, 62) covering the slanted sides of said third cladding layer and also the slanted sides of said first contact layer and being made of substantially the same group III-V compound semiconductor as said substrate. The method according to claim 18, characterized in that said mesa-shaped first contact layer (32′) is subjected to selective etching to have a reduced width. The method according to claim 19, characterized in that said second semiconductive contact layer (36) of the second conductivity type is formed on said current-blocking layer (34), said second contact layer covering the top surface of said first contact layer and also covering said current-blocking layer, and being thick enough to have a flat top surface. The method according to claim 20, characterized in that said insulative layer (40) is removed after said current-blocking layer (34) has been formed. The method according to claim 19, characterized in that said insulative layer (40) is removed before said current-blocking layer (62) is formed, and said current-blocking layer (62) completely covers said third cladding layer (26) and said first contact layer (32). The method according to claim 22, characterized in that a diffusion layer (64) of the second conductivity type is formed in said current-blocking layer (62) in such a manner that said diffusion layer partially overlaps said first contact layer (32). The method according to claim 19, characterized in that said metal organic chemical vapor deposition is performed in an atmosphere of a reduced pressure.

Inventors: ISHIKAWA, MASAYUKI PAT. DIV. TOSHIBA, OHBA, YASUO PAT. DIV. TOSHIBA, SUGAWARA, HIDETO PAT. DIV. TOSHIBA, WATANABE, YUKIO PAT. DIV. TOSHIBA, YAMAMOTO, MOTOYUKI PAT. DIV. TOSHIBA
Applicants: KABUSHIKI KAISHA TOSHIBA
Application year: 1987
Main classification: H01S3
IPC codes: H01S5