A SEMICONDUCTOR LIGHT-EMITTING APPARATUS

Abstract: A semiconductor light-emitting apparatus comprising a semiconductor laser array device (l, l′) with a plurality of lasing filaments and a mode-mixing device (2, 2′) with a striped optical waveguide (202, 202′) that attains an optical phase-coupling with the semiconductor laser array device (l, l′), whereby beams from the semiconductor laser array device (l, l′) are emitted from the light-emitting facet (l30, l30′) of the semiconductor light-emitting apparatus via the mode-mixing device (2, 2′), thereby attaining a near-field pattern with a minimized ripple rate on the optical intensity.

Description: BACKGROUND OF THE INVENTION 1. Field of the invention: This invention relates to a semiconductor light-emitting apparatus that has a low ripple on the optical intensity of the near-field pattern. 2. Description of the prior art: Semiconductor laser devices that are useful as light sources for optical discs, laser printers, optical communication systems, etc., must produce high output power. For this purpose, semiconductor laser array devices, in which a plurality of waveguides are disposed in a parallel manner to achieve an optical phase-coupling between the adjacent waveguides, have been studied by, for example, the inventors of this invention, Applied Physics Letters, Vol. 47(4) PP. 341-343 (1985). However, the studies of semiconductor laser array devices have been focused on the production of high output power and/or the attainment of oscillation in a transverse mode with a 0° -phase shift, but they have not been focused on the uniformity of the optical intensity of their near-field patterns. For example, the inventors of this invention have experimentally obtained the near-field pattern shown in Figure 5 by the use of a loss-guided semiconductor laser array device with three waveguides (Journal of Applied Physics, Vol. 58(7), PP. 2783-2785 (1985)). This array device produced high output power of 100 mW or more, but it can be seen from Figure 5 that the ripple rate of the optical intensity of the near-field pattern is as high as 100%. That is, the optical intensity of the near-field pattern lacks uniformity. The above-mentioned array device having a high ripple rate of the optical intensity of the near-field pattern is not applicable to optical systems in which the near-field pattern of the array device is utilized. SUMMARY OF THE INVENTION The semiconductor light-emitting apparatus of this invention, which overcomes the above-discussed and numerous other disadvantages and deficiencies of the prior art, comprises a semiconductor laser array device with a plurality of lasing filaments and a mode-mixing device with a striped optical waveguide in which the beams from the individual lasing filaments overlap, thereby attaining an optical phase-coupling with the semiconductor laser array device, whereby beams from the semiconductor laser array device are emitted from the light-emitting facet of the semiconductor light-emitting apparatus via the mode-mixing device, thereby attaining a near-field pattern with a minimized ripple on the optical intensity. In a preferred embodiment, the semiconductor laser array device and the mode-mixing device are separately mounted on a stepped heat-sink in such a manner that the level of the active layer of the semiconductor laser array device becomes equal to the level of the optical waveguide of the mode-mixing device. In a preferred embodiment, the semiconductor laser array device and the mode-mixing device are integrated as a united body on a single substrate. Thus, the invention described herein makes possible the objective of providing a semiconductor light-emitting apparatus that has a minimized ripple on the optical intensity of the near-field pattern. BRIEF DESCRIPTION OF THE DRAWINGS This invention may be better understood and its numerous objects and advantages will become apparent to those skilled in the art by reference to the accompanying drawings as follows: Figure 1(a) is a schematic diagram showing a semiconductor light-emitting apparatus of this invention. Figure 1(b) is a sectional front view of the light-emitting apparatus taken along line A-A′ of Figure 1(a). Figure 1(c) is a sectional front view of the light-emitting apparatus taken along line B-B′ 0f Figure 1(a). Figure 2(a) and 2(b), respectively, are graphs showing the near-field patterns at the light-emitting facet of a semiconductor laser array device of this invention and the light-emitting facet of a mode-mixing device of this invention. Figure 3 is a diagram showing the operation principle of a mode-mixing device of this invention. Figure 4(a) is a sectional front view showing another semiconductor light-emitting apparatus of this invention. Figure 4(b) is a sectional front view of the semiconductor light-emitting apparatus taken along line C-C′ of Figure 4(a). Figure 5 is a graph showing the near-field pattern attained by a conventional semiconductor laser array device. DESCRIPTION OF THE PREFERRED EMBODIMENTS This invention provides a semiconductor light-emitting apparatus that has a semiconductor laser array device and a mode-mixing device achieving an optical phase-coupling therebetween. Beams from the light-emitting spots of the semiconductor laser array device are incident upon the mode-mixing device in which the beams overlap, resulting in the emission of light, from the mode-mixing device, which has a minimized ripple on the optical intensity. Example 1 Figure 1(a) shows a semiconductor light-emitting apparatus of this invention, which comprises a semiconductor laser array device 1 and a mode-mixing device 2 achieving an optical phase-coupling with the semiconductor laser array device 1. The semiconductor laser array device 1 is produced as follows: As shown in Figure 1(b), on the flat surface of an n-GaAs substrate 101, an n-Al x Ga 1-x As cladding layer 102 having a thickness of 0.8 µm, an Al y Ga 1-y As active layer 103 having a thickness of 0.08 µm, a first p-Al x Ga 1-x As cladding layer 104 having a thickness of 0.2 µm, an n-current blocking layer 105 having a thickness of 0.8 µm are successively grown by metal-organic chemical vapor deposition, molecular beam epitaxy, liquid phase epitaxy or the like. Then, on the resulting wafer, a plurality of channels 110 (the width of each channel being 4 µm and the distance from the center of one channel to the center of the adjacent channel being 7 µm) are formed in the n-current blocking layer 105 by the use of a known photolithographic technique and an etchant containing NH₄OH and H₂O₂ in the proportion of one to twenty. The n-current blocking layer 105 alone is etched into a plurality of channels 110 by the etchant, but the p-Al x Ga 1-x As cladding layer 104 is not etched by the etchant. Thereafter, on the wafer with these channels 110, a second p-Al x Ga 1-x As cladding layer 106 having a thickness of 0.8 µm with regard to the portions positioned in the channels 110 and a p-GaAs contact layer 107 having a thickness of 1.0 µm are successively grown by metal-organic chemical vapor deposition. Then, the upper face of the contact layer 107 and the back face of the substrate 101 are subjected to a vapor deposition treatment with metal materials of Au-AuZn and AuGe-Ni, respectively, followed by heating at 450°C to form a p-sided electrode l2l of an alloy of Au-AuZn and an n-sided electrode l20 of an alloy of AuGe-Ni. Thereafter, the wafer is cleaved to form a laser resonator having a cavity length of about 250 µm. Both facets are coated with dielectric multi-layered films so as to obtain a reflective index of 3% with regard to the front facet (i.e., the light-emitting facet) and a reflective index of 95% with regard to the rear facet, resulting in a desired semiconductor laser array device. The mode-mixing device 2 is produced as follows: As shown in Figure l(c), on a Si substrate 200, a SiO₂ film 20l having a refractive index of l.48 and a thickness of l.0 µm and a Si₃N₄ film 202 having a refractive index of l.97 and a thickness of l.0 µm are successively disposed by the high-frequency spattering method. Then, the Si₃N₄ film 202 is formed into a stripe having a width W MM of 70 µm by the use of a known photolithographic technique and an etchant that mainly contains phosphoric acid. The striped Si₃N₄ film functions are as a waveguide. Then, the wafer is cleaved in a length l MM of about 200 µm, resulting in a mode-mixing device with a rectangular optical waveguide. The semiconductor laser array device l is mounted on a heat-sink 3 by the use of a soldering material such as In in such a manner that the grown layer-side thereof comes into contact with the heat-sink 3. That is to say, layer l2l is in contact with the heat-sink 3. The heat-sink 3 has a step 3a between the portion on which the semiconductor laser array device l and the mode-mixing device 2 are mounted, respectively. The height of the step 3a is set so that the level of the active layer 103 of the semiconductor laser array device 1 becomes equal to the level of the optical waveguide 202 of the mode-mixing device 2. The mode-mixing device 2 is mounted on the heat-sink 3 by the use of a soldering material such as In. The reflectance of each of the facets of the mode-mixing device 2 is set to be 3% or less, so that beams of the semiconductor laser array device 1, which are incident upon the facet of the mode-mixing device 2, can be prevented from being reflected by the facet of the mode-mixing device 2 and entering the semiconductor laser array device 1. In order that the semiconductor laser array device 1 and the mode-mixing device 2 can effectively achieve an optical phase-coupling therebetween, the distance therebetween is set to be preferably 30 µm or less. The operation principle of the semiconductor light-emitting apparatus of this example is described below: Figure 2(a) shows the near-field pattern at the light-emitting facet 130 (Figure 1(a)) of the semiconductor laser array device 1, which indicates that the ripple rate of the optical intensity of the near-field pattern is 100% that is the same as that of the optical intensity of the near-field pattern of a conventional semiconductor laser array device. The behavior of the optical waves within the mode-mixing device 2 is shown in Figure 3. The length l MM of the mode-mixing device 2 meets the following inequality: wherein P max indicates the maximum value of the distance between the adjacent light-emitting spots of the semiconductor laser array device, ϑindicates the full angle at half maximum of the far-field pattern in the direction that is parallel to the active layer of each of the laser units constituting the semiconductor laser array device, and n MM indicates the equivalent refractive index of the optical waveguide of the mode-mixing device. When the length of the mode-mixing device meets the above-mentioned inequality, beams from the individual lasing filaments 111 of the semiconductor laser array device 1 overlap within the mode-mixing device until the optical waves reach the light-emitting facet 210 of the mode-mixing device 2. The near-field pattern at the light-emitting facet 210 of the mode-mixing device 2 is that as shown in Figure 2(b), indicating that the ripple rate of the optical intensity is as low as 5% or less. The device that has the above-mentioned distribution of the optical intensity on the near-field pattern is most useful as a light source of optical systems in which the optical intensity must be uniform at the image formation point. Example 2 Figure 4(a) and 4(b) show another semi-conductor light-emitting apparatus of this invention, in which a semiconductor laser array device or portion 1′ and a mode-mixing device or portion 2′ are integrated in a single substrate 101′. A sectional front view of this semiconductor light-emitting apparatus taken along line C-C′ of Figure 4(a) is the same as that of the semiconductor light-emitting apparatus of Example 1 shown in Figure 1(b). This semiconductor light-emitting apparatus is produced as follows: On an n-GaAs substrate 101′, an n-Al x Ga 1-x As cladding layer 102′ having a thickness of 1.2 µm, an Al y Ga 1-y As active layer 103′ having a thickness of 0.08 µm, a first P-Al x Ga 1-x As cladding layer 104′ having a thickness of 0.2 µm, and an n-GaAs current blocking layer having a thickness of 0.8 µm are successively grown by metal-organic chemical vapor deposition, molecular beam epitaxy, liquid phase epitaxy or the like. Then, a plurality of channels are formed in the current blocking layer in the same way as described in Example 1. Then, a second P-Al x Ga 1-x As cladding layer 106′ having a thickness of 0.8-1.0µm with regard to the portions positioned within the channels and a p⁺-GaAs contact layer 107′ having a thickness of 1.0 µm are successively grown by metal-organic chemical vapor deposition, liquid phase epitaxy or the like. Thereafter, a portion of the wafer is removed by a reactive ion beam etching technique so as to reach the n-cladding layer 102′ through the active layer 103′, resulting in a laser light-emitting facet 130′ of the laser array portion 1′. The thickness of the remaining n-cladding layer 102′ is about 0.4 µm. Then, on the remaining cladding layer 102′, a Si₃N₄film 202′ having a thickness of 1.5 µm is deposited by plasma assisted chemical vapor deposition, followed by subjecting said film to a photolithographic treatment and an etching treatment to form into a stripe as shown in Figure 4(b). The striped Si₃N₄film 202′, which has a thickness t MM of about 1.5 µm, a width W MM of 70 µm and a length l MM of about 100 µm, functions as an optical waveguide. Then, an n-ohmic contact 120′ and a p-ohmic contact 121′ are formed on the back face of the substrate 101′ and the upper face of the contact layer 107′ of the semiconductor laser array portion 1′, respectively. The other facet of the laser array portion 1′ is formed by cleavage, resulting in a desired semiconductor light-emitting apparatus. This semiconductor light-emitting apparatus produced a near-field pattern at the light-emitting facet 210′ operates on the same principle as described in Example 1. The near-field pattern exhibited a low ripple rate on the optical intensity that is the same as that of the optical intensity shown in Figure 2(b). As mentioned above, according to this invention, a semiconductor light-emitting apparatus that attains a near-field pattern with a minimized ripple rate of the optical intensity can be obtained. This invention is not limited to the above-mentioned examples, but is is, of course, applicable to the following devices: (i) Semiconductor laser array devices of gain-guided types, effective refraction types, wide-stripe types etc., other than the semiconductor laser array device of the above-mentioned examples; (ii) AlGaAs mode-mixing devices with waveguide structures including buried types or ridged types that are different from the mode-mixing devices with the waveguide structure of the above-mentioned examples; (iii) Semiconductor light-emitting apparatus with joint structures other than the joint structure described in Example 2 in which the active layer of the semiconductor laser array portion and the optical waveguide of the mode-mixing portion are optically jointed to each other by a bud joint structure; for example, a semiconductor light-emitting apparatus in which the optical guiding layer of a mode-mixing device attains an optical phase-coupling with the extended heterostructures sandwiching the active layer therebetween of a semiconductor laser array device in the direction that is longitudinal to the principal plane of the devices, or a semiconductor light-emitting apparatus in which an extension of the optical guiding layer formed on the upper or lower surface of the active layer of a semiconductor laser array device functions as an optical waveguide of a mode-mixing device; and: (iv) Semiconductor light-emitting apparatus with polarities different from those of the semiconductor light-emitting apparatus of the above-mentioned examples. In the above description of Figs. l(a), l(b) and l(c) and also Figs. 4(a) and 4(b), the composition ratio y of the Al y Ga l-y As active layer l03 is selected so as to be in the range of 0 to 0.4. The composition ratio x of the Al x Ga l-x As cladding layers l03 and l04 is selected so as to be x>y. When the oscillation wavelength is 820 nm, it is preferable to select the ratios x and y to be 0.33 and 0.07, respectively.

Claims: A semiconductor light-emitting apparatus comprising a semiconductor laser array device (l, l′) with a plurality of lasing filaments and a mode-mixing device (2, 2′) with a striped optical waveguide (202, 202′) in which the beams from the individual lasing filaments overlap, thereby attaining an optical phase-coupling with said semiconductor laser array device (l, l′), whereby beams from said semiconductor laser array device (l, l′) are emitted from the light-emitting facet (210, 210') of said semiconductor light-emitting apparatus via said mode-mixing device (2, 2′), thereby attaining a near-field pattern with a minimized ripple on the optical intensity. A semiconductor light-emitting apparatus according to claim l, wherein said semiconductor laser array device (l) and said mode-mixing device (2) are separately mounted on a stepped heat-sink (3) in such a manner that the level of the active layer (l03) of said semiconductor laser array device (l) becomes equal to the level of the optical waveguide (202) of said mode-mixing device. A semiconductor light-emitting apparatus according to claim l, wherein said semiconductor laser array device (l′) and said mode-mixing device (2′) are integrated as a united body on a single substrate (l0l′).

Inventors: MATSUI, SADAYOSHI, MATSUMOTO, MITSUHIRO, TANEYA, MOTOTAKA
Applicants: SHARP KABUSHIKI KAISHA
Application year: 1987
Main classification: H01S3
IPC codes: H01S5