ELECTROPHOTOGRAPHIC SENSITIZED BODY

Abstract: An electrophotographic sensitized body has a photoconductive layer (6) comprising hydrogenated amorphous silicon on a substrate (2) which comprises conductive material such as Al, Al-Si (0.2 - 1.2 wt.%) - Mg (0.45 - 1.2 wt.%) alloy, super duralmine and extra super duralmine. Between the substrate (2) and the photoconductive layer (6) is a diffusion blocking layer (8) 0.005 - 5 microns in thickness. Typically the blocking layer (8) is of a nitride of titanium, tantalum or hafnium, a silicide of platinum, nickel, palladium, titanium, hafnium, tantalum, tungsten, vanadium, niobium, molybdenum or zirconium, a carbide of tungsten, titanium, molybdenum, hafnium, vanadium, niobium or tantalum or metallic chromium. The decrease in specific resistance of the photoconductive layer caused by diffusion of the substrate material into the photoconductive layer is thus prevented and the sensitivity to the light in the region of the oscillatory wave length of a semiconductor laser is improved.

Description: The present invention relates to the electrophotographic sensitized body which is particularly suitable for laser beam printers using a semiconductor laser. The electrophotographic sensitized body is provided with a photoconductive layer which comprises photoconductive material on the surface of a metallic substrate. As the photoconductive material with high resistance used for the photoconductive layer of this electrophotographic sensitized body, amorphous semiconductor, e.g. hydrogenated amorphous silicon, is given attention. This material shows high photosensitivity in the visible light range, high hardness and low toxicity, compared with the conventional photoconductive material comprising amorphous selenium or organic photoconductor. However, the photosensitivity around 780 - 800 nm, the wave length region of the semiconductor laser, is not high and further sensitization in this region is sought. To improve the sensitivity in a particular wave length region, the following two conditions are extremely important: (i) On irradiation of light in the given wave length region, pairs of electron and positive hole are readily created in the photoconductive layer. In other words, an optical band gap, corresponding to the wave length region concerned, must exist in the photoconductive layer. (ii) The pairs of electron and positive hole created in (i) must be moved fast in the photoconductive layer by the electric field, which is produced between positive charges applied on the surface of the sensitized body and negative charges induced on the interface between the substrate and photoconductive layer. (The sign of the charges may sometimes be inverted.) In other words, the mobility of electrons and positive holes in the photoconductive layer must be large. Particularly for (ii), it is well known that not only the mobility of the electrons which directly neutralize the positive charges on the surface of the sensitized body but that of the positive holes which neutralize the negative charges on the surface of the substrate is important. In addition to sufficient sensitivity, the electrophotographic sensitized body must further meet following two conditions: (iii) The specific resistance of the photoconductive layer must be over 10¹⁰ Ω cm in order to prevent the discharge of the charges, which have been applied by Corona discharge etc. on the surface of the sensitized body across the thickness of the photoconductive layer before the light exposure. (iv) After the light exposure, in order to prevent disappearance of the charge pattern formed on the surface of the sensitized body before development due to the charge's lateral mobility, the surface resistance of the sensitized body must be adequately high, i.e. over 10¹⁰ Ω cm in specific resistance. The hydrogenerated amorphous silicon usually has the optical band gap of about 1.8 eV, indicating a good photosensitivity for light around 600 - 650 nm, the wave length region of the gas laser using He gas or Ne gas, but an abrupt drop of the photosensitivity around 780 - 800 nm (the range corresponding to the optical band gap of about 1.5 eV), the wave length region of the semiconductor laser. Methods like Ge- and Sn-addition to the amorphous silicon were found to reduce the optical band gap of this material, as is reported, e.g. in "Modern Amorphous Silicon Handbook", pp. 200 - 201, 221 - 223 (March 31, 1973) published by Science Forum Co., Ltd. However, these methods lead to an unfavorable result that specific resistance of the sensitized body is reduced. In order to avoid this drawback, a composition of sensitized body has been proposed, as is detailed, e.g. in JP-A-219565/83. This is a composition in which the hydrogenated amorphous silicon carbide layer, which has a comparatively large optical band gap and specific resistance, is deposited on the photoconductive layer and on the interface between the photoconductive layer and its substrate. This layer on the sensitized body surface is called "surface coating layer", and a layer on the interface is called "barrier layer". The surface coating layer is effective against lateral redistribution of the charges on the surface and discharge in the direction of the layer thickness. On the other hand, the barrier layer effectively blocks the charge implantation from the substrate into the photoconductive layer. These measures help the photosensitivity in the region of oscillatory wave length of the semiconductor laser to improve to some extent. However, investigations by the present inventors have disclosed a problem of the contamination in the photoconductive layer by diffusion of the substrate's constituent elements through the barrier layer. The diffusion of the substrate's constituent metal is due to the heating in the processes to prepare the barrier layer, photoconductive layer and surface coating layer. More concretely put, these layers are usually prepared by sputtering, plasma CVD or evaporation process. In these formation processes, the substrate is heated to around 200 - 300°C, partial diffusion of the substrate's constituent elements being caused into the barrier layer and photoconductive layer. By this diffusive contamination, an impurity level is formed inside the band gap of the photoconductive layer, or the specific resistance is reduced. For example, in the case that the substrate is made of Al and the photoconductive layer of amorphous silicon, Al contaminates the amorphous silicon reducing the resistance of the sensitized body. Consequently, the effect of electric field on the electrons and positive holes in the photoconductive layer is reduced, the travel efficiency of the electrons and positive holes created by photo-absorption becomes worse and the photosensitivity decreases. Furthermore, the trap level of electrons and positive holes by the diffused metal as impurity in the silicon causes reduction of the mobility. The phenomenon that the substrate's constituent metals diffuse into the photoconductive layer was observed in all cases where hydrogenated amorphous silicon was used as material for the photoconductive layer, irrespective of the presence of barrier layer. It was confirmed that the decrease in resistance and the deterioration of photosensitivity of the photoconductive layer were caused by such diffusion of the substrate constituents into the photoconductive layer. The object of the present invention is to provide an electrophotographic sensitized body of high resistance and good photosensitivity. In particular this is achieved by providing a composition in which diffusion of the constituent metal of the substrate and, therefore, contamination of the photoconductive layer are avoidable. The invention is set out in claim 1 and consists in a body which has a photoconductive layer comprising hydrogenated amorphous silicon on the conductive metallic substrate, wherein there is a diffusion blocking layer, which practically blocks the diffusion of constituent metal of the substrate, between substrate and photoconductive layer. This diffusion blocking layer desirably has a thickness (preferably 0.005 - 5 µm (microns)) so that it transports charges from the photoconductive layer to the substrate. By blocking the diffusion of a constituent element of the substrate into the photoconductive layer, the reduction of resistance of the photoconductive layer and the formation of trap level can be prevented. The material used for the diffusion blocking layer desirably has a comparatively small specific resistance, practically under 10⁻¹ Ω cm (preferably under 10⁻⁵ Ω cm). In such a composition, charges in the photoconductive layer can easily pass through into the substrate. An example of the layer with insulating oxide film provided between the substrate and photoconductive layer is illustrated in JP-A-14140/83, but it is not appropriate because of its high resistance (10¹⁰ to 10¹⁶ Ω cm). Preferable materials, meeting requirements of the diffusion blocking properties and low resistance to various constituent metals of the substrate such as Al etc., are nitrides, silicides and carbides of transition metals; particularly titanium nitride, tantalum nitride, hafnium nitride, platinum silicide PtSi, nickel silicide NiSi₂, palladium silicide Pd₂Si, titanium silicide TiSi₂, hafnium silicide HfSi₂, tantalum silicide TaSi₂, tungsten silicide WSi₂, vanadium silicide VSi₂, niobium silicide NbSi₂, molybdenum silicide MoSi₂, zirconium silicide ZrSi₂, tungsten carbide, titanium carbide, molybdenum carbide, hafnium carbide, vanadium carbide, niobium carbide and tantalum carbide. These compounds are strongly binding and not chemically active, so good diffusion blocking effect is expected as the diffusion blocking layer. By the sputtering process etc., a thin film with 0.005 - 5 micron thickness is readily produced. Particularly, titanium nitride is most preferable because of its thermal stability and low specific resistance as 10⁻⁴ to 10⁻⁵ Ω cm. Also, tantalum nitride and hafnium nitride are effective for the same reason. Since metal silicides have specific resistance within the order of 10⁻⁴ to 10⁻⁵ Ω cm, they are also suitable for the material of diffusion blocking layer. Specific resistance of the main metal silicides are shown as follows: PtSi 2.8 - 3.5 x 10 - 5 Ω cm NiSi approx. 5.0 Pd₂Si 3.0 - 3.5 TiSi₂ 1.3 - 2.5 HfSi₂ 4.5 - 7.0 TaSi₂ 3.5 - 5.5 WSi₂ approx. 7.0 VSi₂ 5.0 - 5.5 NbSi₂ approx. 5.0 MoSi₂ 9.0 - 10.0 ZrSi₂ 3.5 - 4.0 As the material of the substrate supporting the photoconductive layer, following materials are preferred besides Al: Al-Si (0.2 - 1.2 wt. %) - Mg (0.45 - 1.2 wt. %) alloy, super duralmine, extra super duralmine and austenitic stainless steel containing Ni and Cr. If metal nitrides, for example, are used for the diffusion blocking layer, it is desirable for the selection of metal nitride to be done in the manner that the bond strength between nitrogen and the metal constituting the metal nitride should be stronger than that between nitrogen and the element diffusing from the substrate to the photoconductive layer. Thus, the metal nitride constituting the diffusion blocking layer is kept stable, being prevented from the bond rupture and configurational change caused by the diffusing element. Nitrides, silicides and carbides, which were already shown as the materials of diffusion blocking layer, adequately show the diffusion blocking effect with each of the substrates comprising Al, Al-Si-Mg alloy, super duralmine, extra super duralmine and austenitic stainless steel. As for the mechanism enable blocking of the diffusion of constituent metal of the substrate into the photoconductive layer, besides the case where the material of diffusion blocking layer is entirely inactive to the diffusing element as mentioned previously, another case exists where the diffusion element is trapped by a stable intermetallic compound produced between the diffusing element and constituent metal of the substrate. The latter case is, for example, concerned with metal silicides of Pt, Ni and Pd. These metal silicides readily produce intermetallic compounds with trapped Al. Also, the intermetallic compounds produced with Al usually have small specific resistance as 10⁻⁴ to 10⁻⁵ Ω cm, they therefore become an effective diffusion blocking layer. Here, the inter-metallic compounds produced by metal silicide and Al do not always cover the whole region of the diffusion blocking layer, being rather limited to its surface in contact with the substrate. In the case that the substrate comprises Al or Al alloy, formation of a metallic Cr layer between the metal silicides of Pt, Ni and Pd and the Al-substrate with 0.005 - 5 micron total thickness of the metal silicide and metallic Cr layer is desirable. Only the metallic Cr layer, without the metal silicide layer, is effective to interfere the diffusion of Al into the photoconductive layer. In this case, the thickness of the layer, which is essential to determine the appropriate range of resistance, is preferably 0.005 - 5 microns. The diffusion blocking layer provided between the substrate and photoconductive layer thus prevents the photoconductive layer from decrease in its specific resistance and formation of trap levels, and consequently deterioration of travel efficiency of electrons and positive holes formed by laser absorption. Furthermore, with the specific resistance of the diffusion blocking layer kept below 10⁻¹ cm, the charges are not prevented from easily passing through the substrate side. The present invention is applicable to the electrophotographic sensitized body in which the photoconductive layer is directly formed on the metallic substrate or to the electrophotographic sensitized body in which the photoconductive layer comprising hydrogenated amorphous silicon is formed on the metal substrate by interposing another layer, e.g. an amorphous silicon carbide layer between the two. The electrophotographic sensitized body is usually used in the state that the surface mostly exposed to the air is covered by a protective layer, e.g. an amorphous silicon carbide layer or an amorphous carbon layer. In the present invention, such use with a protective layer is available, as a matter of course. The photoconductive layer is not necessarily monolayer, but may be multilayer, such as double or triple layer with additional composition varieties within the range of keeping a hydrogenated amorphous silicon configuration. Here, the photoconductive layer comprising hydrogenated amorphous silicon not only means simple hydrogenated amorphous silicon, but also includes that doped with B, P or Ge. Fig. 1 is a cross-sectional representation of the electrophotographic sensitized body embodying the invention. Fig. 2 illustrates the spectral sensitivity characteristics of the electrophotographic sensitized body in embodiments of the invention and a Comparative Example. Fig. 3 is a cross-sectional representation of the electrophotographic sensitized body of another embodiment of the invention. Examples The following examples are illustrative of the present invention and are not intended as a limitation of the scope thereof. Regarding the preparation of the diffusion blocking layer, the methods of sputtering, electron beam deposition and ion cluster beam deposition are applicable. As for the preparation of the hydrogenated amorphous silicon photoconductive layer, methods of plasma CVD, sputtering and electron beam deposition are applicable. Also, for the preparation of the other kinds of layer in the sensitized body mentioned above, some of the methods mentioned above can be applied. Fig. 1 is a cross-sectional representation of the electrophotographic sensitized body in one embodiment of this invention. The photographic sensitized body concerning this Example has a multi-layer photoconductive layer comprising an upper photoconductive layer and a lower photoconductive layer. The upper photoconductive layer is provided with the surface coating layer, and the lower photoconductive layer is provided with the barrier layer below it which blocks the implantation of charges from the substrate to the photoconductive layer. The electrophotographic body of this Example has a series of layers, i.e. diffusion blocking layer 8, barrier layer 7, lower photoconductive layer 6, upper photo conductive layer 5 and surface coating layer 4 as the uppermost part, outward from the substrate 2. The surface coating layer 4 and barrier layer 7 have a comparatively high optical band gap and high specific resistance. The upper photoconductive layer 5 has a comparatively small optical band gap and produces pairs of electron and positive hole on absorbing the semiconductor laser beam. The lower photoconductive layer 6 has higher specific resistance than that of the upper photoconductive layer 5 in order not to decrease the resistance of the sensitized body as a whole. By the presence of this lower photoconductive layer, the electrical properties of the sensitized body as a whole are improved and the electric field imposed on the electrons and positive holes is increased, and, accordingly, the travel efficiencies of electrons and positive holes are considerably improved. In this practical example, the diffusion blocking layer 8 is provided between the barrier layer 7 and the substrate 2. This layer has the function mentioned previously, and details of its practical material and layer preparation method are described as follows: Example 1: (1) As the substrate, an aluminum drum with the surface planished by diamond bits is used. It is placed in a vacuum chamber, and after evacuation to around 1 x 10⁻⁶ Torr with the surface temperature of the drum kept at 200°C, argon gas is introduced into the chamber up to the pressure of 0.01 Torr. The sputtering is conducted with a high frequency wave of 13.56 MHz and 200 W power using a 80 mm-diameter titanium nitride target, and the diffusion blocking layer 8 with 100 nm thickness of titanium nitride film is prepared. (2) While keeping surface temperature of the aluminum drum is kept at 200°C, the vacuum chamber is evacuated again up to 1 x 10⁻⁶ Torr, and then a mixed gas of argon, ethylene (C₂H₄) and hydrogen (H₂) is introduced until the inner pressure becomes 0.01 Torr. The gas ratio is controlled at H₂/(Ar + H₂) = 0.6 and C₂H₄/(H₂ + C₂H₄) = 0.3. The sputtering is conducted with a high frequency wave of 13.56 MHz and 200 W, using a 80 mm - diameter silicon target and the barrier layer 7 with 100 nm deposit thickness of hydrogenated amorphous silicon carbide (a-Si 1-x C x : H) film is prepared. (3) While surface temperature of the aluminum drum is kept at 200°C, the vacuum chamber is evacuated up to around 1 x 10⁻⁶ Torr, and then mixed gas of argon and hydrogen is introduced up to the pressure of 0.01 Torr. The gas ratio is H₂/(Ar + H₂) = 0.6. The sputtering is conducted with a high frequency wave of 13.56 MHz and 200 W, and the lower photoconductive layer 6 with 20 micron deposit thickness of hydrogenated amorphous silicon (a-Si : H) film is prepared. (4) The sputtering is conducted with the similar method to (3), except the 80 mm-diameter silicon target on which a germanium chip is placed with the area ratio of 0.2 to the whole target, and the upper photoconductive layer 5 with 3 micron deposit thickness of hydrogenated amorphous silicon germanium (a-Si 1-x Ge x : H) film is prepared, which is more practically described as follows: After the target mentioned previously was set in a vacuum chamber and the chamber is evacuated, mixed gas of argon and hydrogen was introduced into the vacuum chamber up to the pressure of 0.01 Torr. The gas ratio is H₂/(Ar + H₂) = 0.6. While surface temperature of the drum is kept at 200°C, the sputtering was conducted with a high frequency wave of 13.56 MHz and 200 W and the upper photoconductive layer was prepared. (5) While surface temperature of the aluminum drum is kept at 200°C, the vacuum chamber is evacuated again to the pressure of around 1 x 10⁻⁶ Torr and mixed gas of argon, ethylene and hydrogen is introduced up to the pressure of 0.01 Torr. The gas ratio is H₂/(Ar + H₂) = 0.6 and C₂H₄/(H₂ + C₂H₄) = 0.6. The sputtering is conducted with a high frequency wave of 13.56 MHz and 200 W, using a 80 mm diameter silicon target and the surface coating layer 4 with 500 nm deposit thickness of hydrogenated amorphous silicon carbide film is prepared. The electrophotographic sensitized body was produced by these procedures described in (1) - (5). The spectral sensitivity characteristics of the electrophotographic sensitized body are illustrated in Fig. 2 (b). As a comparative example, the spectral sensitivity characteristics of the electrophotographic sensitized body provided with surface coating layer 4, upper photoconductive layer 5, lower photoconductive layer 6 and barrier layer 7, but not with diffusion blocking layer 8, are illustrated in Fig. 2 (a). By comparison of these sensitized bodies, it is clarified that the spectral sensitivity characteristics are improved for beams in the regions of oscillatory wave length at 600 - 650 nm for the gas laser and 780 - 800 nm for the semiconductor laser, by providing with the diffusion blocking layer 8. Example 2: (i) This example demonstrates the barrier layer and surface coating layer prepared with amorphous silicon carbide and the lower photoconductive layer prepared with boron-doped hydrogenated amorphous silicon. After an aluminum drum planished with diamond bits is placed in a vacuum chamber evacuated to around 1 x 10⁻⁶ Torr, with surface temperature of the drum kept at 300°C, argon and nitrogen (N₂) gases are introduced up to the pressure of 0.01 Torr. The sputtering is conducted with a high frequency wave of 13.56 MHz and 200 W power, using a 80 mm diameter titanium target and the diffusion blocking layer 8 with 100 nm thickness titanium nitride film is prepared. (ii) While the surface temperature of drum is kept at 300°C, the vacuum chamber is evacuated again to 1 x 10⁻⁶ Torr and mixed gas of monosilane (SiH₄), ethylene and hydrogen is introduced up to the pressure of 0.3 Torr. The gas ratio is adjusted to (SiH₄ + C₂H₄)/(H₂ + SiH₄ + C₂H₄) = 0.25 and C₂H₄/(SiH₄ + C₂H₄) = 0.25. Through glow discharge with a high frequency wave of 13.56 MHz and 100 W power, the barrier layer 7 with 100 nm deposit thickness of amorphous silicon carbide film is prepared. (iii) After evacuation of the vacuum chamber up to 1 x 10⁻⁶ Torr, mixed gas of monosilane, diborane (B₂H₆) and hydrogen is introduced up to 0.3 Torr. The gas ratio is controlled at SiH₄/(H₂ + SiH₄) = 0.25 and B₂H₆/SiH₄ = 5 x 10⁻⁴. With surface temperature of the aluminum drum kept at 300°C, by glow discharge with a high frequency wave of 13.56 MHz and 200 W power, the lower photoconductive layer 6 with 20 micron deposit thickness of boron-doped hydrogenated amorphous silicon film is prepared. (iv) After the vacuum chamber is evacuated again to 1 x 10⁻⁶ Torr, mixed gas of monosilane, germane and hydrogen is introduced up to the pressure of 0.3 Torr. The gas ratio is adjusted to (SiH₄ + GeH₄)/(H₂ + SiH₄ + GeH₄) = 0.25 and GeH₄/(SiH₄ + GeH₄) = 0.3. While surface temperature of the aluminum drum is kept at 300°C, by glow discharge with a high frequency wave of 13.56 MHz and 100 W power, the upper photoconductive layer 5 with 3 micron deposit thickness of hydrogenated amorphous silicon germanium film is prepared. (v) After evacuation of the vaccum chamber to 1 x 10⁻⁶ Torr, mixed gas of monosilane, ethylene and hydrogen is introduced to 0.3 Torr. The gas ratio is adjusted to (SiH₄ + C₂H₄)/(H₂ + SiH₄ + C₂H₄) = 0.25 and C₂H₄/(SiH₄ + C₂H₄) = 0.5. With surface temperature of the aluminum drum kept at 300°C, by glow discharge with a high frequency wave of 13.56 MHz and 100 W power, the surface coating layer 4 with 500 nm deposit thickness of amorphous silicon carbide film is prepared. The spectral sensitivity characteristics of electrophotographic sensitized body, produced by the procedures (i) - (v) mentioned above, are shown in Fig. 2 (c). The spectral sensitivity characteristics in Example 2, with respect to the light in the region of oscillatory wave length by either the gas laser or the semiconductor laser, are superior to those in Example 1. Example 3: The diffusion blocking layer, comprising two layers, i.e. a metallic chromium layer and a nickel silicide layer, is illustrated in this case. (a) After an aluminum drum planished with diamond bits is placed in a vacuum chamber evacuated to around 5 x 10⁻⁷ Torr, with surface temperature of the drum kept at 300°C, a 100 nm thickness metallic chromium film is prepared by the electron beam deposition. (b) While surface temperature of the aluminum drum is kept at 300°C, the vacuum chamber is evacuated to 1 x 10⁻⁶ Torr, and then argon is introduced to 0.01 Torr. Using a 80 mm diameter polycrystalline silicon target, on which nickel pieces are scattered, the sputtering is conducted with a high frequency wave of 13.56 MHz and 200 W power and a 500 nm thickness nickel silicide film is prepared. Those two layers of metallic chrome and nickel silicide prepared by (a) and (b) are regarded as the diffusion blocking layer. (c) By the same procedure with processes (2) -(5) shown in Example 1, barrier layer 7, lower photoconductive layer 6, upper photoconductive layer 5 and surface protective layer 4 are prepared. The cross-sectional drawing of the electrophotographic sensitized body produced by these processes is shown in Fig. 3. The diffusion blocking layer 8 comprises metallic chromium layer 81 and nickel silicide layer 82. The spectral sensitivity characteristics of the electrophotographic sensitized body, produced by the processes (a) - (c) mentioned above, are shown in Fig. 2 (d). This characteristics with respect to the light in the region of oscillatory wave length of 600 - 650 nm of the gas laser are somewhat inferior to those in Examples 1 and 2, but are remarkably good compared with conventional ones; furthermore, those in the Example with respect to the light in the region of oscillatory wave length 780 -800 nm of the semiconductor laser are confirmed to be superior to those in Example 1. According to the present invention, the diffusion of constituent metal of the substrate into the photoconductive layer, which occurs during the production process of the electrophotographic sensitized body, can be blocked and prevention of decrease in specific resistance is effected. As a result, the electrophotographic sensitized body in the present invention has good sensitivity to the light of 780 - 800 nm in the region of oscillatory wave length of the semiconductor laser and of 600 - 650 nm in the wave length region of the gas laser.

Claims: An electrophotographic sensitized body which has a photoconductive layer (6) which comprises hydrogenated amorphous silicon on a metallic conductive substrate (2), characterized in that between said substrate (2) and said photoconductive layer (6) there is a diffusion blocking layer (8) which has the function of blocking the diffusion of atoms from said substrate (2) into said photoconductive layer (6) and has a specific resistance of less than 10⁻¹ Ω cm. An electrophotographic sensitized body according to claim 1, wherein the material of said conductive substrate (2) is Al, Al-Si (0.2 - 1.2 wt. %) - Mg (0.45-1.2 wt. %) alloy, super duralmine, extra super duralmine or austenitic stainless steel containing Ni and Cr. An electrophotographic sensitized body according to claim 1 or claim 2 wherein said diffusion blocking layer (8) is 0.0005 - 5 micrometer in thickness and is made of titanium nitride, tantalum nitride, hafnium nitride, platinum silicide, nickel silicide, palladium silicide, titanium silicide, hafnium silicide, tantalum silicide, tungsten silicide, vanadium silicide, niobium silicide, molybdenum silicide, zirconium silicide, tungsten carbide, titanium carbide, molybdenum carbide, hafnium carbide, vanadium carbide, niobium carbide, tantalum carbide or metallic chrome. An electrophotographic sensitized body according to any one of claims 1 to 3 wherein a barrier layer (7) for preventing charge injection is provided between said diffusion blocking layer (8) and said photoconductive layer (6). An electrophotographic sensitized body according to claim 4 wherein said barrier layer (7) is made of hydrogenerated amorphous silicon carbide or amorphous silicon carbide. An electrophotographic sensitized body according to any one of claims 1 to 5 having a surface coating layer (4) on said photoconductive layer (6). An electrophotographic sensitized body according to claim 6, wherein said surface coating layer is made of amorphous silicon carbide or hydrogenated amorphous silicon carbide. An electrophotographic sensitized body according to any one of claims 1 to 7 wherein said photoconductive layer has a two-layer structure (5, 6). An electrophotographic sensitized body according to claim 8, wherein said photoconductive layer has a two-layer structure comprising a lower photoconductive layer (6) of hydrogenated amorphous silicon and an upper photoconductive layer (5) of hydrogenated amorphous silicon germanium. An electrophotographic sensitized body according to claim 8, wherein said photoconductive layer has a two-layer structure comprising a lower photoconductive layer (6) of boron-doped hydrogenated amorphous silicon and an upper photoconductive layer (5) of hydrogenated amorphous silicon germanium. An electrophotographic sensitized body according to any one of claims 1 to 10, wherein said diffusion blocking layer (8) has a layer structure comprising a lower layer (81) of metallic chromium and an upper layer (82) of platinum silicide, nickel silicide, palladium silicide, titanium silicide, hafnium silicide, tantalum silicide, tungsten silicide, vanadium silicide, niobium silicide, molybdenum silicide or zirconium silicide.

Inventors: CHIGASAKI, MITSUO, OHNO, TOSHIYUKI, TAMAHASHI, KUNIHIRO
Applicants: HITACHI, LTD.
Application year: 1987
Main classification: G03G5
IPC codes: G03G5