ROLL TYPE SOLID ELECTROLYTIC CAPACITOR

Abstract: Disclosed is a solid electrolytic capacitor having a roll-form capacitor element. The capacitor element has a coated structure comprising a valve metal positive electrode substrate having a dielectric oxide layer on the surface thereof, a semiconductor layer formed on the dielectric oxide layer and an electroconductive layer formed on the semiconductor layer.

Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solid electrolytic capacitor. More particularly, it relates to a roll type solid electrolytic capacitor. 2. Description of the Prior Art In electrolytic capacitors, a film-forming metal capable of forming an insulating oxide film, that is, a so-called valve metal, such as aluminum, tantalum, niobium or titanium, is used as a positive electrode. An oxide film layer is formed on the surface of the valve metal by anodic oxidation or the like and this oxide film layer is utilized as a dielectric material. A negative electrode is arranged on the outside of the oxide film layer with an electrolyte layer interposed therebetween, and thus a capacitor is constructed. As the electrolyte, there can be mentioned a liquid electrolyte formed by dissolving an inorganic or organic acid or a salt thereof in water or a polar solvent and a solid electrolyte composed of an electroconductive or semiconductive inorganic oxide or organic substance such as manganese dioxide, lead dioxide or a tetracyanoquinodimethane complex salt. A capacitor comprising the latter electrolyte is called a solid electrolytic capacitor. Various shapes have been proposed for the valve metal positive electrode substrate. A roll form capacitor formed by winding a sheet-form substrate into the form of a roll is advantageous in that the capacitance per unit volume is large. However, in a capacitor of the type where two electrode foils having a paper separator interposed therebetween are wound, such as a conventional electrolytic capacitor comprising a liquid electrolyte or a capacitor comprising a TCNQ salt as the solid electrolyte as disclosed in Japanese Unexamined Patent Publication No. 58-17,609, reduction of the volume is limited because of the special structure thereof. Furthermore, if a liquid electrolyte or TCNQ salt is used, the electroconductivity is low and generally 10⁻¹ S.cm⁻¹ or less, and characteristics of the capacitors, such as the loss coefficient (tan δ ) and the impedance, are apt to be adversely influenced. U.S. Patent No. 3,320,494 discloses a roll type solid electrolytic capacitor comprising (a) a coiled valve metal foil electrode, (b) a dielectric oxide layer, (c) a manganese oxide electrolyte layer overlying the dielectric oxide layer, (d) a vapor deposited metallic counterelectrode layer, and (e) a counterelectrode leadout assembly comprising a metallized elongated sheet having an electrically conducting wire bonded thereto. SUMMARY OF THE INVENTION It is a primary object of the present invention to solve the problems of the conventional solid electrolytic capacitors and provide a solid electrolytic capacitor having good capacitor performances, in which the effect of reducing the size and volume is much higher than in the conventional capacitors. In accordance with the present invention, there is provided a roll type solid electrolytic capacitor comprising a capacitor element which comprises (a) a sheet-form valve metal positive electrode substrate having a positive electrode lead attached thereto and having dielectric oxide layers on both of the entire surfaces thereof, (b) a semiconductor layer formed on the entire surface of each dielectric oxide layer, and (c) an electroconductive layer formed on the entire surface of each semiconductor layer and having a negative electrode lead attached thereto; said capacitor element being in the form of a roll characterised in that the capacitor element is convolutely wound together with a sheet-form separator into a roll form so that the capacitor element and the separator are alternately superposed. The roll type solid electrolytic capacitor according to the immediately preceding paragraph is prepared by a process comprising the steps of forming a semiconductor layer on the entire surface of each dielectric oxide layer of a sheet-form valve metal positive electrode substrate having a positive electrode lead attached thereto and having the dielectric oxide layers on both of the entire surfaces thereof, forming an electroconductive layer on the entire surface thereof, forming an electroconductive layer on the entire surface of each semiconductor layer, and thereafter attaching a negative electrode lead to the electoconductive layer; said process further comprises the step of convolutely winding the sheet-form valve metal positive electrode substrate into the form of a roll, (i) before the step of forming the semiconductor layer, (ii) after the step of forming the semiconductor layer, but before the step of forming the electroconductive layer, or (iii) after the step of forming the electroconductive layer. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a perspective view illustrating a solid capacitor element wound in the form of a roll; and Fig. 2 is a perspective view illustrating a capacitor element wound together with a separator in the form of a roll. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Any metal having a valve action, such as aluminum, tantalum, niobium, titanium or alloy thereof, can be used as the valve metal substrate as the positive electrode. Of these valve metals, aluminum is especially preferred. In the present invention, a sheet-form positive electrode is convolutely wound in the form of a roll. In the instant specification and appended claims, the term "sheet-form" is used in a broad sense to include a foil, a film, a sheet, a tape and a ribbon. The dielectric oxide layer formed on the surface of the positive electrode substrate may be either a layer of an oxide of the positive electrode per se formed in the surface portion of the positive electrode substrate, or a layer of other dielectric oxide formed on the surface of the positive electrode substrate. A layer composed of an oxide of the positive electrode valve metal per se is preferred. In each case, any known oxide layer-forming methods can be adopted. For example, where an aluminum foil is used as the positive electrode substrate, if the surface of the aluminum foil is electrochemically etched and the aluminum foil is electrochemically treated in an aqueous solution of boric acid and ammonium borate, an oxide layer composed of a dielectric aluminum oxide is formed on the aluminum foil as the positive electrode substrate. A positive electrode lead line is connected to the valve metal positive electrode substrate by caulking, high frequency bonding or the like before or after formation of the dielectric oxide layer. The sheet-form valve metal positive electrode substrate is wound into the form of a roll directly or after formation of the semiconductor layer or formation of the semiconductor layer and the electroconductive layer to form a roll-form electrolytic capacitor element 1 as shown in Fig. 1. In Fig. 1, reference numeral 2 represents a positive electrode lead terminal attached to the positive electrode substrate. The method for winding the valve metal positive electrode substrate into the form of a roll is not particularly critical. For example, the known method for fabricating a roll-form element comprising negative electrode and positive electrode foils used for a conventional electrolytic capacitor comprising a liquid electrolyte can be utilized for winding the positive electrode alone in the present invention. Such factors as the winding number, the winding diameter and the winding pitch can be optionally determined and are not particularly critical. Where the winding is carried out before formation of the semiconductor layer, preferably the valve metal positive electrode substrate is wound while spaces between adjacent wound layers are taken into consideration so that the semiconductor layer and electroconductive layer are formed in a good condition on the oxide layer. If the dielectric oxide layer formed in advance is cracked during the winding operation, the reforming or aging operation can be performed. The reforming operation can be performed according to any known methods. For example, the above-mentioned electro- chemical treatment in an aqueous solution of boric acid and ammonium borate for the aluminum foil can be adopted. When the sheet-form valve metal positive electrode substrate or the substrate having the electroconductive layer or the semiconductor layer and electroconductive layer formed on the valve metal positive electrode substrate is wound into the form of a roll, the substrate can be convolutely wound together with a sheet-form separator into a roll form so that the substrate and the separator are alternately superposed. Fig. 2 shows a roll-form capacitor element 1 in which a separator 3 is jointly wound and a positive electrode lead terminal 2 is attached. As the separator, there may be used woven fabrics, non-woven fabrics and paper sheets composed of glass fibers, carbon fibers, rayon fibers, nylon fibers or polypropylene fibers. In the present invention, the kind of the semiconductor or the method for forming the semiconductor layer is not particularly critical. In order to enhance such characteristics as the loss coefficient (tan δ) and impedance in the capacitor, preferably a semiconductor composed mainly of a metal oxide such as lead dioxide, manganese dioxide or tin dioxide is deposited by a known method such as thermal decomposition, electrochemical precipitation or chemical precipitation. A layer composed mainly of lead dioxide or lead dioxide and lead sulfate is especially advantageously used as the semiconductor layer in the present invention. As the method for forming a semiconductor layer composed mainly of lead dioxide or lead dioxide and lead sulfate, there can be mentioned a chemical deposition method and an electrochemical deposition method. As the chemical deposition method, there can be mentioned, for example, a method in which the semiconductor is chemically deposited from a solution containing a lead-containing compound and an oxidant. As the lead-containing compound, there can be mentioned lead-containing compounds in which a lead atom is coordination-bonded or ion-bonded to a chelate-forming compound such as oxine, acetylacetone, pyromeconic acid, salicylic acid, alizarin, polyvinyl acetate, a porphyrin compound, a crown compound or a cryptate compound, and lead citrate, lead acetate, basic lead acetate, lead chloride, lead bromide, lead perrchlorate, lead chlorate, lead sulfate, lead silicon hexafluoride, lead bromate, lead borofluoride, lead acetate hydrate and lead nitrate. An appropriate lead-containing compound is selected according to the solvent used for the reaction mother liquid. A mixture of two or more of the foregoing lead-containing compounds may be used. The concentration of the lead-containing compound in the reaction mother liquid is in the range of from the concentration giving a saturation solubility to 0.05 mole/ℓ, preferably from the concentration giving a saturation solubility to 0.1 mole/ℓ, especially preferably from the concentration giving a saturation solubility to 0.5 mole/ℓ. If the concentration of the lead-containing compound in the reaction mother liquid is lower than 0.05 mole/ℓ, a solid electrolytic capacitor having a good performance cannot be obtained. If the concentration of the lead-containing compound in the reaction mother liquid exceeds the saturation solubility, no advantage is obtained by addition of the excessive amount of the lead-containing compound. As the oxidant, there can be mentioned, for example, quinone, chloranil, pyridine-N-oxide, dimethyl sulfoxide, chromic acid, potassium permanganate, selenium oxide, mercury acetate, vanadium oxide, sodium chlorate, ferric chloride, hydrogen peroxide, benzoyl peroxide, calcium hypochlorite, calcium chlorite, calcium chlorate and calcium perchlorate. An appropriate oxidant is selected according to the solvent. A mixture of two or more of the foregoing oxidants may be used. Preferably the oxidant is used in an amount of 0.1 to 5 moles per mole of the lead-containing compound. If the amount of the oxidant is larger than 5 moles per mole of the lead-containing compound, no economical advantage is obtained, and if the amount of the oxidant is smaller than 0.1 mole per mole of the lead-containing compound, a solid electrolytic capacitor having a good performance cannot be obtained. As the means for forming a semiconductor layer composed mainly of lead dioxide, there can be adopted, for example, a method in which a solution containing the lead-containing compound is mixed with a solution containing the oxidant to prepare a reaction mother liquid and a foil laminate is immersed in the reaction mother liquid to chemically deposit lead dioxide on the foil laminate. As the electrochemical deposition method, there can be mentioned a method previously proposed by us, in which lead dioxide is deposited by electrolytic oxidation in an electrolyte containing a lead ion at a high concentration (see Japanese Patent Application No. 61-26,962). The electrolyte used for forming a semiconductor layer composed mainly of lead dioxide by electrolytic oxidation is an aqueous solution containing a lead ion or an organic solvent solution containing a lead ion. In order to improve the ion electroconductivity of the electrolyte, a known electrolytic substance may be incorporated into the electrolyte. As the organic solvent used for formation of the organic solvent solution, any solvent capable of dissolving therein the above-mentioned compound giving a lead ion seed can be used. For example, there can be mentioned ethyl alcohol, glycerol, benzene, dioxane and chloroform. A mixture of two or more of the foregoing organic solvents may be used. Furthermore, an organic solvent having a compatibility with water may be used in the form of a mixture with water. The lead ion concentration in the electrolyte is 0.2 mole/ℓ to the concentration giving a saturation solubility, preferably from 0.5 mole/ℓ to the concentration giving a saturation solubility, especially preferably from 0.9 mole/ℓ to the solution giving a saturation solubility. If the concentration of the lead ion exceeds the level giving a saturation solubility, no advantage is obtained by an addition of an excessive amount of the lead ion. If the lead ion concentration is lower than 0.2 mole/ℓ, because of a too low concentration of the lead ion in the electrolyte, a semiconductor layer of lead dioxide formed by electrolytic oxidation does not sufficiently adhere to the oxide layer of the positive electrode substrate, and only a solid electrolytic capacitor having a very small capacitance and a large loss coefficient is obtained. Electrolytic oxidation can be performed according a known method such as a constant current method, a constant voltage method or a pulse method or by adopting the constant current method and constant voltage method alternately. Known electrolytic apparatus and operation procedures may be adopted for electrolytic oxidation. The time and temperature of electrolytic oxidation are changed according to the kind of the positive electrode substrate, the substantial area of the oxide film, the kind of the lead ion seed and the electrolytic conditions and cannot simply be defined. Preferably the time and temperature are decided based on the results of preliminary experiments. If the semiconductor layer is constructed by a layer composed mainly of lead dioxide acting inherently as the semiconductor and lead sulfate acting as an insulating substance, the leak current value of the capacitor can be reduced. On the other hand, the incorporation of lead sulfate reduce the electroconductivity of the semiconductor layer, and therefore, the loss coefficient value is increased, but a performance much higher than that of the conventional solid electrolytic capacitor can be maintained. Namely, if the semiconductor layer is formed of a mixture of lead dioxide and lead sulfate, a good capacitor performance can be maintained within such a broad composition range that the amount of lead dioxide is 10 to 100 parts by weight and the amount of lead sulfate is up to 90 parts by weight. In order to obtain a good balance between the leak current value and the loss coefficient value, preferably the semiconductor layer is composed of a mixture comprising 20 to 50% by weight, especially 25 to 35% by weight, of lead oxide and 80 to 50% by weight, especially 75 to 65% by weight, of lead sulfate. If the content of lead dioxide is lower than 10% by weight, the electroconductivity is reduced and the loss coefficient value is increased, and a sufficient capacitance is not manifested. The semiconductor layer composed mainly of lead dioxide and lead sulfate can be prepared, for example, by chemical deposition using an aqueous solution containing a lead ion and a persulfate ion as the reaction mother liquid. An oxidant free of a persulfate ion may be added to the aqueous solution. The lead ion concentration in the mother liquid is from the concentration giving a saturation solubility to 0.05 mole/ℓ, preferably from the concentration giving a saturation solubility to 0.1 mole/ℓ, especially preferably from the concentration giving a saturation solubility to 0.5 mole/ℓ. If the lead ion concentration exceeds the concentration giving a saturation solubility, no advantage is obtained by an addition of an excessive amount of the lead ion. If the lead ion concentration is lower than 0.05 mole/ℓ, because of a too low lead ion concentration in the mother liquid, the frequency of deposition of the semiconductor should be increased. The persulfate ion concentration in the mother liquid is such that the molar ratio of the persulfate ion to the lead ion is from 5 to 0.05. If this molar ratio exceeds 5, the unreacted persulfate ion is left and the manufacturing cost is increased. If the molar ratio is lower than 0.05, the unreacted lead ion is left and the electroconductivity is reduced. As the compound giving a lead ion seed, there can be mentioned, for example, lead citrate, lead perchlorate, lead nitrate, lead acetate, basic lead acetate, lead chlorate, lead sulfamate, silicon lead hexafluoride, lead bromate, lead chloride and lead bromide. A mixture of two or more of these compounds giving a lead ion seed may be used. As the compound giving a persulfate ion seed, there can be mentioned, for example, potassium persulfate, sodium persulfate and ammonium persulfate. A mixture of two or more of these compounds giving a persulfate ion seed may be used. As the oxidant, there can be mentioned, for example, hydrogen peroxide, calcium hypochlorite, calcium chlorite, calcium chlorate and calcium perchlorate. In the present invention, the electroconductive layer on the semiconductor layer may be formed, for example, by solidification of an electroconductive paste, plating and metal vacuum deposition. As the electroconductive paste, there are preferably used a silver paste, a copper paste, a nickel paste, an aluminum paste and a carbon paste. These pastes may be used singly or in the form of mixtures of two or more thereof. If at least two pastes are used, they may be used in the form of a mixture, or in the form of superposed independent layers. After the electroconductive paste is applied, the paste is allowed to stand in air or is heated, whereby the paste is solidified. As the plating, there can be mentioned nickel plating, copper plating and aluminum plating. As the metal to be vacuum-deposited, there can be mentioned aluminum and copper. The common negative electrode terminal may be attached by using an electroconductive paste or soldered onto the electroconductive layer. The present invention will now be described in detail with reference to the following Examples. Example 1 The surface of an aluminum foil having a length of 10 cm and a width of 0.5 cm was electrochemically etched by an alternating current by using the aluminum foil as the positive electrode. A positive electrode terminal was caulked to the etched aluminum foil and a positive electrode lead line was connected thereto. Then, the etched aluminum foil was electrochemically treated in an aqueous solution of boric acid and ammonium borate to form an aluminum oxide layer and obtain an etched and formed aluminum foil for a low voltage (about 1.0 µF/cm²). The formed foil was wound into a roll form together with a separator having a thickness of 10 µm and composed of glass fibers, and re-formation was carried out in the above-mentioned aqueous solution of boric acid and ammonium borate. Subsequently, the roll-form foil was immersed in an aqueous solution containing 1 mole/ℓ of lead acetate and a dilute aqueous solution containing hydrogen peroxide in an amount of 0.5 mole per mole of lead acetate was added. The roll-form foil was allowed to stand in this state for 1 hour. The lead dioxide layer precipitated on the roll-form foil was washed with water and dried under a reduced pressure at 120°C. The roll-form foil having the lead dioxide layer was immersed in a silver paste bath, drawn up and air-dried. The solidified silver paste layer was formed on the lead dioxide layer of the roll-form foil. A CP line was connected as the negative electrode lead to the roll-form foil by a silver paste and the surface was covered with a solder, and the roll-form foil was sealed with a resin to obtain a solid electrolytic capacitor. Example 2 An aqueous solution containing 3.8 mole/ℓ of lead acetate trihydrate was mixed with an aqueous solution containing 4.0 mole/ℓ of ammonium persulfate. The same etched and formed aluminum foil as used in Example 1 was wound into a roll form together with a separator having a thickness of 25 µm and composed of rayon fibers, and the roll-form aluminum foil was immersed in the above-mentioned liquid mixture and allowed to stand at 90°C for 20 minutes. The semiconductor layer precipitated on the roll-form aluminum foil was washed with water. The post treatments were carried out in the same manner as described in Example 1 to obtain a roll type solid electrolytic capacitor. By mass analysis, X-ray analysis and infrared spectrum analysis, it was confirmed that the formed semiconductor layer was composed of lead dioxide and lead sulfate and the content of lead dioxide was about 25% by weight. Example 3 A roll type solid electrolytic capacitor was prepared in the same manner as described in Example 2 except that aqueous hydrogen peroxide was added at a concentration of 0.05 mole/ℓ at the step of forming the semiconductor layer. It was confirmed that the semiconductor layer was composed of lead dioxide and lead sulfate and the content of lead dioxide was about 50% by weight. The results obtained in Examples 1 through 3 are shown in Table 1. For reference, the results obtained in Comparative Examples 1 and 2, described below, are also shown in Table 1. Comparative Example 1 The surface of an aluminum foil having a length of 10 cm and a width of 0.5 cm was electrochemically etched by an alternating current by using the aluminum foil as the positive electrode. Then, a positive electrode terminal was caulked to the etched aluminum foil and a positive electrode lead line was connected thereto. Then, the aluminum foil was electrochemically treated in an aqueous solution of boric acid and ammonium borate to form an aluminum oxide layer whereby an etched and formed aluminum foil for a low voltage (about 1.0 µF/cm²) was obtained. The formed foil was then wound into the form of a roll and the obtained roll-form element was subjected to re-formation in the above-mentioned aqueous solution of boric acid and ammonium borate. Subsequently, the roll-form element was immersed in an aqueous solution containing 1 mole/ℓ of lead acetate, and a dilute aqueous solution containing hydrogen peroxide in an amount of 0.5 mole per mole of lead acetate was added to the above aqueous solution. The roll-form element was allowed to stand for 1 hour, and a layer of lead dioxide percipitated on the roll-form element was washed with water and dried under a reduced pressure at 100°C. The roll-form element having the lead dioxide layer bonded thereto was immersed in a silver paste bath, taken up and air-dried. The solidified silver paste layer was formed on the lead dioxide layer of the roll-form element. A copper line was connected as a negative electrode lead to the roll-form element by a silver paste, and the roll-form element was sealed with a resin to form a solid electrolytic capacitor. By using the etched and formed aluminum foil as described above an electrolytic capacitor comprising a liquid electrolyte was prepared by known procedures. More specifically, an element comprising a positive electrode foil (the above-mentioned etched and formed aluminum foil) having a terminal attached thereto, a negative electrode foil having a terminal attached thereto and a separator was wound into the form of a roll. The roll-form element was impregnated with a liquid electrolyte comprising ethylene glycol and ammonium adipate and contained in an outer casing formed of aluminum. An opening was closed with a rubber sealer to form a roll type electrolytic capacitor. Comparative Example 2 By using the same etched and formed aluminum foil as used in Comparative Example 1, a solid electrolytic capacitor comprising an electroconductive layer of TCNQ salt was prepared according to the process disclosed in Japanese Unexamined Patent Publication No. 58-17,609. More specifically, a complex salt of isopropyl quinoline with TCNQ was heat-fused in an outer casing formed of aluminum. A roll-form element having a positive electrode foil having a terminal attached thereto, a negative electrode foil having a terminal attached thereto and a separator was preliminarily heated and immersed in the melt of the TCNQ complex salt. The melt was promptly solidified by cooling. The roll-form element was sealed with a resin to form a roll type electrolytic capacitor.

Claims: A roll type solid electrolytic capacitor comprising a capacitor element (1) which comprises (a) a sheet-form valve metal positive electrode substrate having a positive electrode lead (2) attached thereto and having dielectric oxide layers on both of the entire surfaces thereof, (b) a semiconductor layer formed an the entire surface of each dielectric oxide layer, and (c) an electroconductive layer formed on the entire surface of each semiconductor layer and having a negative electrode lead attached thereto; said capacitor element being in the form of a roll characterised in that the capacitor element (1) is convolutely wound together with a shoot-form separator (3) into a roll form so that the capacitor element (1) and the separator are alternately superposed. A solid electrolytic capacitor as set forth in claim 1, wherein the sheet-form separator is a woven fabric, non-woven fabric or paper sheet and composed of glass fibres, carbon fibres, rayon fibres, nylon fibres or polypropylene fibres. A solid electrolytic capacitor as set forth in any one of claims 1 or 2, wherein the dielectric oxide layer is a layer of an oxide of the valve metal as the positive electrode. A solid electrolytic capacitor as set forth in any one of claims 1 to 3, wherein the semiconductor layer is composed mainly of lead dioxide. A solid electrolytic capacitor as set forth in claim 4, wherein the semiconductor layer is a layer electrochemically precipitated from a reaction mother liquid containing a load-containing compound. A solid electrolytic capacitor as set forth in claim 4, wherein the semiconductor layer is a layer chemically precipitated from a reaction mother liquid containing a lead-containing compound and an oxidant. A solid electrolytic capacitor as set forth in any one of claims 1 to 3, wherein the semiconductor layer is composed mainly or lead dioxide and lead sulfate. A solid electrolytic capacitor as set forth in claim 7, wherein lead dioxide is contained in an amount larger than 10% by weight but smaller than 100% by weight in the semiconductor layer. A solid electrolytic capacitor as set forth in claims 7 or 8, wherein the semiconductor layer is a layer chemically precipitated from a reaction mother liquid containing a lead ion and a persulfate ion. A process for the preparation of a roll type solid electrolytic capacitor according to claim 1, which comprises the steps of forming a semiconductor layer on the entire surface of each dielectric oxide layer of a sheet-form valve metal positive electrode substrate having a positive electrode lead attached thereto and having the dielectric oxide layers on both of the entire surfaces thereof, forming an electroconductive layer on the entire surface of each semiconductor layer, and thereafter attaching a negative electrode lead to the electroconductive layer; said process further comprises the step of convolutely winding the sheet-form valve metal positive electrode substrate into the form of a roll, (i) before the step of forming the semiconductor layer, (ii) after the step of forming the semiconductor layer, but before the step of forming the electroconductive layer, or (iii) after the step of forming the electroconductive layer, wherein the sheet-form valve metal positive electrode substrate is convolutely wound together with a sheet-form separator into the form of a roll so that the positive electrode substrate and the separator are alternately superposed. A process for the preparation of a roll type solid electrolytic capacitor according to claim 10, wherein the sheet-form separator is a woven fabric, non-woven fabric or paper sheet and composed of glass fibres, carbon fibres, rayon fibres, nylon fibres or polypropylene fibres. A process for the preparation of a roll type solid electrolytic capacitor according to any one of claims 10 or 11, wherein the dielectric oxide layer in a layer of an oxide of the valve metal as the positive electrode. A process for the preparation of a roll type solid electrolytic capacitor according to claim 12, wherein the semiconductor layer is composed mainly of lead dioxide. A process for the preparation of a roll type solid electrolytic capacitor according to claim 13, wherein the semiconductor layer is electrochemically precipitated from a reaction mother liquid containing a load-containing compound. A process for the preparation of a roll type solid electrolytic capacitor according to claim 14, wherein the concentration of the lead-containing compound in the reaction mother liquid is from 0.2 mole/l to a concentration giving the saturation solubility. A process for the preparation of a roll type solid electrolytic capacitor according to claim 13, wherein the semiconductor layer is chemically precipitated from a reaction mother liquid containing a lead-containing compound and an oxidant. A process for the preparation of a roll type solid electrolytic capacitor according to Claim 16, wherein the concentration of the lead-containing compound in the reaction mother liquid is from 0.05 mole/l to a concentration giving the saturation solubility and the oxidant is contained in an amount or 0.1 to 5 moles per mole of the lead-containing compound. A process for the preparation of a roll type solid electrolytic capacitor according to any of claims 10 or 11, wherein the semiconductor layer is composed mainly of lead dioxide and load sulfate. A process for the preparation of a roll type solid electrolytic capacitor according to claim 18, wherein lead dioxide is contained in an amount larger than 10% by weight but smaller than 100% by weight in the semiconductor layer. A process for the preparation of a roll type solid electrolytic capacitor according to claims 17 or 18, wherein the semiconductor layer is chemically preipitated from a reaction mother liquid containing a lead ion and persulfate ion. A process for the preparation of a roll type solid electrolytic capacitor according to claim 20, wherein the concentration of the lead ion in the reaction mother liquid is from 0.1 mole/l to a concentration giving the saturation solubility and the amount of the persulfate ion is 0.05 to 5 moles per mole of the lead ion.

Inventors: ARAKAWA, YOSHIAKI, HAMAGUCHI, YUICHI, IKEZAKI, TAKASHI, NAITOH, KAZUMI, ROPPONGI, YASUNOBU, YABE, SHOJI, YOKOHAMA, YUTAKA
Applicants: NIPPON CHEMI-CON CORPORATION, SHOWA DENKO KABUSHIKI KAISHA
Application year: 1987
Main classification: H01G9
IPC codes: H01G9