MOS SEMICONDUCTOR CIRCUIT

Abstract: An MOS semiconductor circuit includes cascade-connected logical circuits (Il to I5). The MOS semiconductor circuit further includes an MOS transistor circuit having at least one first MOS transistor (Pll to Pl5) coupled between a source voltage terminal (VDD) and the output nodes of the individual logical circuits (Il to I5), and a second MOS transistor (Pl6), which has the same conductivity type as the first MOS transistor (Pll to Pl5) and has its gate and drain short-circuited, with this gate being coupled to the gate of the first MOS transistor (Pll to Pl5). The MOS semiconductor circuit also includes a current control circuit (Rl), which is coupled to the drain of the second MOS transistor (Pl6) for providing a predetermined current between the source and drain of the second MOS transistor (Pl6).

Description: This invention relates to an MOS semiconductor circuit comprising: first and second voltage terminals; cascade-connected logic circuits; a first MOS transistor circuit having first MOS transistors coupled between said first voltage terminal and output nodes of respective logic circuits; a second MOS transistor having the same conductivity type as said first MOS transistor and having a source, a gate coupled to a gate of said first MOS transistors and a drain coupled to said gate of said second MOS transistor; a current control circuit, coupled to said drain of said second MOS transistor, for causing a predetermined current to flow through the source-drain path of said second MOS transistor; a second MOS transistor circuit having third MOS transistors coupled between said second voltage terminal and respective output nodes of said logic circuits; and a fourth MOS transistor having the same conductivity type as said third MOS transistors and having a gate coupled to a gate of said third MOS transistors and a drain coupled to said gate of said fourth MOS transistor. Such a device is known from US-A-4 592 087. A dynamic RAM (DRAM) needs a periodic refresh operation or data hold operation. Many of recent DRAMs automatically initiate a refresh operation when they are not accessed, i.e. when they are in a standby mode. This type of a RAM has a refresh timer provided on the same chip, and this refresh timer measures the time interval between refresh operations to regularly trigger the refresh operation. In general, the refresh timer is constituted by a ring oscillator. Fig. 1 illustrates a conventional ring oscillator used as a refresh timer. The ring oscillator comprises six CMOS inverters I1 to I6 each having one of P-channel MOS transistors P1 to P6 coupled in series with a corresponding one of N-channel MOS transistors N1 to N6 between a power source terminal VDD of a high potential and a reference voltage terminal VSS (ground potential = 0 V) of a low potential. The first five CMOS inverters I1 to I5 are coupled in ring, and the output of inverter I5 is coupled to the last CMOS inverter I6, which serves as a wave shaper. These inverters I1 to I6 have their respective output nodes S1 to S6 coupled to parasitic electrostatic capacitors C1 to C6, respectively. When the ring oscillator is used as a refresh timer, its oscillation period is between, for example, 10 µs and 100 µs and its dissipation power determines the dissipation power of a DRAM in standby mode. Therefore, it is desirable to reduce the dissipation power of the ring oscillator itself as low as possible. In the ring oscillator shown in Fig. 1, the constituents of each of the CMOS inverters coupled in ring, e.g., P-channel MOS transistor P1 and N-channel MOS transistor N1 of inverter I1 are designed to have a long channel length L so that these transistors each have a small conductance. For instance, their channel width W is about 2 µm while the channel length L is 200 µm. In contrast, transistors P6 and N6 constituting wave-shaping inverter I6 are designed to have a relatively large conductance; for instance, their channel width W is as wide as 100 µm. This wave-shaping inverter I6 drives another circuit (not shown) and electrostatic capacitor C6 coupled to its output node S6 has a capacitance as high as 5 pF. The aforementioned ring oscillator is used not only as the refresh timer, but also in a base-plate bias circuit that provides a base-plate bias voltage on chip. When the ring oscillator is used as a refresh timer, it is not desirable that its oscillation frequency easily varies with a change in the ambient temperature, the voltage in use, manufacturing processes, each the like. This is because as the oscillation frequency increases, the standby current also increases. Figs. 2 and 3 respectively depict the temperature characteristic of the oscillation frequency and the dependency of the oscillation frequency on the power source voltage in the prior art ring oscillator. As indicated by the characteristic of Fig. 2, the oscillation frequency varies about 30-40 % between 0°C and 85°C. As should be clear from the characteristic curve of Fig. 3, the oscillation frequency also varies about 30 % when the power source voltage VDD varies between 4 V and 6 V. In the memory cells of a DRAM, the leak current increases at a high temperature and the amount of charges that can be accumulated in the memory cells decreases with a low power source voltage. Accordingly, the refresh timer requires such a characteristic that the oscillation frequency is high at a high temperature and a low power source voltage. However, the prior art refresh timer actually has the contrary characteristics as shown in Figs. 2 and 3. Therefore, according to the prior art, the refresh timer is designed to have a minimum allowable frequency at a high temperature and a low power source voltage in order to ensure data holding even at these temperature and voltage levels. Consequently, the refresh timer oscillates at a higher frequency at a low temperature and a high power source voltage, thus significantly increasing the standby current. Although the refresh interval need not be short in these temperature and voltage conditions, the refresh operation is executed frequently and thus wastefully because the refresh timer oscillates at a high frequency. Further, the standby current increases by 140 % (due to the temperature change) × 130 % (due to the power source voltage change) of what is necessary and becomes about 180 % of the proper amount, thus increasing the dissipation power. With a variation in the manufacturing processes considered, the actual standby current would be two to three times the proper standby current. Furthermore, since transistors P1 and N1 of inverter I1 have a long channel length L so as to have a small conductance, the area occupied by each inverter on an integrated chip is above 10000 µm², thus undesirably increasing the overall chip area. The prior art circuit has another shortcoming as follows. Fig. 4 shows the waveforms of the output voltages at output nodes S5 and S6 of the respective inverters I5 and I6 of the ring oscillator shown in Fig. 1. A variation in the output voltage of inverter I5 at node S5 is considerably gentle as compared with a variation in the output voltage of inverter I6 at node S6. For instance, the time interval between t1 where the output voltage at node S5 is VSS and t2 where it is increased to the threshold voltage VTN of the N-channel MOS transistor, is 10 µs. Denoting the threshold voltage of P-channel MOS transistor P6 of inverter I6 as VTP, the threshold voltage of N-channel MOS transistor N6 as VTN and the time where the voltage at node S5 increases to the level (VDD - VTP) from the level VTN at t3, both transistors P6 and N6 are ON between time t2 and t3. Consequently, a current path is formed between source voltage terminal VDD and reference voltage terminal VSS through transistors P6 and N6. As the change in the voltage at output node S5 of inverter I5 is gentle, the time period in which the current flows between the voltage terminals is long. Assume now that the maximum current flowing between the voltage terminals in the ring oscillator is 5 mA and the channel widths W of transistors N6 and P6 are 100 µm and 200 µm, respectively. Then, the average current flowing in inverter I6 is 50 µA, making it difficult to attain a low dissipation power due to the presence of inverter I6. If the wave-shaping inverter I6 is omitted or the conductances of transistors P6 and N6 are reduced, the current path between the voltage terminals would disappear or the current would be reduced. However, in this case, the same phenomenon would in turn occur at the first stage of another circuit (not shown) which is driven by the output signal of inverter I6. After all, the dissipation power cannot be reduced. Although inverter I1 is also driven by the output signal of inverter I5, its conductance is as low as 1/10000 of that of the wave-shaping inverter I6 so that the current flowing between voltage terminals of inverter I1 is negligible. In short, the prior art circuit has some shortcomings such that the temperature and voltage characteristics cannot be flexibly set, the dissipation power and the chip area cannot be reduced as desired, and the oscillation frequency is not stable with respect to a change in temperature, voltage and manufacturing processes. It is an object of this invention to provide an MOS semiconductor circuit whose operation characteristic is not greatly influenced by a variation in the operation temperature, power source voltage, or the like. According to one aspect of the invention, the semiconductor circuit initially defined is characterized in that: said current control circuit comprises a polysilicon resistor coupled between said drains of said second and fourth MOS transistors. According to another aspect of the invention, there is provided an MOS semiconductor circuit, comprising first and second voltage terminals; cascade-connected logic circuits; a first MOS transistor circuit having first MOS transistors coupled to said first voltage terminal in series with respective logic circuits; a second MOS transistor having the same conductivity type as said first MOS transistors and having a source, a gate coupled to a gate of said first MOS transistors and a drain coupled to said gate of said second MOS transistor; a first current control circuit, coupled to the drain of said second MOS transistor, for causing a first predetermined current to flow through the source-drain path of said second MOS transistor; a second MOS transistor circuit having third MOS transistors coupled to said second voltage terminal and in series with respective said logic circuits; a fourth MOS transistor of said current control circuit having the same conductivity type as said third MOS transistors and having a source, a gate coupled to a gate of said third MOS transistors and a drain coupled to said gate of said fourth MOS transistor; and a second current control circuit coupled to the drain of said fourth MOS transistor for causing a second predetermined current to flow through the source drain path of said fourth MOS transistor; characterized in that: the first current control circuit comprises a first polysilicon resistor coupled between the drain of said second MOS transistor and the second voltage supply terminal to provide said first predetermined current; and the second current control circuit comprises a second polysilicon resistor coupled between the drain of said fourth MOS transistor and said first voltage supply terminal to provide said second predetermined current. This invention can be more fully understood from the following detailed description when taken in conjunction with the accompanying drawings, in which: Fig. 1 is a circuit diagram of a conventional ring oscillator; Figs. 2 and 3 are diagrams respectively showing the relationship between the oscillation frequency of the ring oscillator of Fig. 1 and temperature and power source voltage; Fig. 4 is a waveform diagram for explaining the operation of the ring oscillator of Fig. 1; Fig. 5 is a circuit diagram of an MOS semiconductor circuit according to an embodiment of this invention; Fig. 6 is a diagram showing the relationship between temperature and the sheet resistance of a polysilicon resistor used in the MOS semiconductor circuit of Fig. 5; Figs. 7 and 8 are diagrams respectively showing the relationship between the oscillation frequency of a ring oscillator used in the MOS semiconductor circuit of Fig. 5 and temperature and voltage; Fig. 9 is a circuit diagram of an MOS semiconductor circuit with a bias control circuit of the embodiment of Fig. 5 modified; Fig. 10 is a circuit diagram of an MOS semiconductor circuit having a diode coupled in parallel with a resistor of the bias control circuit of the embodiment shown in Fig. 5; Fig. 11 is a circuit diagram of an MOS semiconductor circuit provided with a logic circuit that supplies voltage signals to a wave shaper in response to the output signals of the ring oscillator; Fig. 12 is a diagram illustrating the waveforms of the voltage signals of the logic circuit of Fig. 11; Fig. 13 is a circuit diagram of an MOS semiconductor circuit having a feedback circuit coupled to the output terminal of the wave shaper of Fig. 11; and Fig. 14 is a circuit diagram of an MOS semiconductor circuit according to another embodiment of this invention. Embodiments of this invention will now be explained with reference to the accompanying drawings. Fig. 5 is a circuit diagram showing the first embodiment of this invention in which an MOS semiconductor circuit of this invention is applied to a ring oscillator. For ease of understanding and simplicity, the reference numerals used in the prior art circuit of Fig. 1 are also used for corresponding parts of Fig. 5. In this embodiment, N-channel MOS transistors N11 to N15 are inserted between voltage terminal VSS and N-channel MOS transistors N1 to N5 of inverters I1 to I5, respectively. Similarly, P-channel MOS transistors P11 to P15 are inserted between voltage terminal VDD and P-channel MOS transistors P1 to P5 of inverters I1 to I5, respectively. The gates of the five P-channel MOS transistors P11 to P15 are commonly coupled and are also coupled to the gate of another P-channel MOS transistor P16. P-channel MOS transistor P16 has its source coupled to voltage terminal VDD and its gate and drain short-circuited. The gates of the five N-channel MOS transistors N11 to N15 are commonly coupled and are further coupled to the gate of another N-channel MOS transistor N16. N-channel MOS transistor N16 has its source coupled to voltage terminal VSS and its gate and drain short-circuited. A resistor R1 formed of polysilicon is inserted between the drain of P-channel MOS transistor P16 and the drain of N-channel MOS transistor N16. The resistor R1 and two transistors P16 and N16 constitute a bias control circuit B1. A signal at output node S5 of inverter I5 is supplied to a toggle flip-flop circuit TFF through two inverters I7 and I8 serving as buffers. In Fig. 5, as described previously, the gate and drain of transistor P16 are short-circuited and this gate is further coupled to the gates of transistors P11 to P15, while the gate and drain of transistor N16 are similarly short-circuited and this gate is further coupled to the gates of transistors N11 to N15. This arrangement is known as a current mirror circuit. Because transistor N16 has the same bias condition between its gate and source as, for example, transistor N11, the same current would flow in transistors N11 and N16 when these transistors have the same channel length and the same channel width. Here, the bias current control means for transistor N16 is constituted by polysilicon resistor R1, and a current d1 determined by this resistor R1 equals a maximum current d2 of transistor N11. This current d2 causes discharging of electrostatic capacitor C1 coupled to output node S1. The temperature dependency of the oscillation frequency is explained. The capacitance of electrostatic capacitor C1 is hardly dependent on the temperature. Since current d1, which determines current d2 for discharging the charges accumulated in electrostatic capacitor C1, is determined by polysilicon resistor R1, current d2 is also hardly dependent on the temperature. This is obvious from Fig. 6 that shows the temperature dependency of the sheet resistance of the polysilicon resistor. The polysilicon resistor is significantly stable against a temperature change, and since the equivalent resistance of a transistor is determined by the amount of carriers moved, the polysilicon resistor is in a sharp contrast with the one having a large temperature dependency. Since sheet resistivity of a polysilicon resistor is larger than that of a diffusion resistor, the area to obtain a high resistance is smaller than for the diffusion resistor. As a result, the time for discharging the charges built up in capacitor C1 shows a flatter temperature characteristic and the temperature dependency of the oscillation frequency is significantly improved as indicated by the solid line in Fig. 7, as compared with the conventional case which is indicated by the broken line in Fig. 7. In the embodiment, toggle flip-flop circuit TFF is used to frequency-divided the output signal of inverter I5, thus ensuring the use of a lower oscillation frequency. The dependency of power source-voltage will now be considered. The equivalent resistance of each transistor in the conventional circuit of Fig. 1 is proportional to source voltage VDD. Therefore, the amount of charges accumulated in each electrostatic capacitor C is proportional to power source voltage VDD, which means the discharging time of electrostatic capacitor C1 is inversely proportional to power source voltage VDD. In this embodiment, however, the discharging time for each of electrostatic capacitors C1 to C5 does not depend on the equivalent resistances of transistors N1 to N5, but is proportional to current d1 flowing across resistor R1. Since this current d1 becomes a value obtained by subtracting threshold voltage VTP of p-channel MOS transistor P16 and threshold voltage VTN of N-channel MOS transistor N16 from the source voltage VDD and dividing the result by the resistance of resistor R1, the discharging time is proportional to (VDD - VTP - VTN). Assuming that threshold voltages VTP and VTN are sufficiently smaller than source voltage VDD, the discharge current and charges to be discharged are proportional to source voltage VDD. Accordingly, the discharging time is hardly dependent on the source voltage, so is the oscillation frequency, which is thus significantly improved as indicated by the solid line in Fig. 8, as compared with the conventional case that is indicated by the broken line in Fig. 8. Fig. 9 is a circuit diagram depicting the configuration of the second embodiment of this invention, which is designed to further reduce the source-voltage dependency. In the second embodiment, in place of bias control circuit B1 of the first embodiment, bias control circuits B2 and B3 are separately provided using P-channel MOS transistor P17 and N-channel MOS transistor N17, respectively. P-channel MOS transistor P17 has its gate and drain short-circuited and its source coupled to voltage terminal VDD, while N-channel MOS transistor N17 has its gate and drain short-circuited and its source coupled to voltage terminal VSS. In bias control circuit B2, a polysilicon resistor R2 is inserted as a bias current control means between the drain of P-channel MOS transistor P17 and voltage terminal VSS, the gate of P-channel MOS transistor P17 is coupled to the gates of P-channel MOS transistors P11 to P15. In bias control circuit B3, another polysilicon resistor R3 is provided, also as a bias current control means, between the drain of N-channel MOS transistor N17 and voltage terminal VSS, and the gate of transistor N17 is coupled to the gates of N-channel MOS transistors N11 to N15. Since each bias control circuit B2 or B3 includes only a single transistor and current d3 flowing across resistor R3 is proportional to (VDD - VTH), the discharging current and the amount of charges to be discharged are more faithfully proportional to power source voltage VDD. However, since the same amount of current always flows through current control transistors P16 and N16 in the circuit of Fig. 5, the Fig. 5 circuit is advantageous in that inverters I1 to I5 have the same rising characteristic. In the embodiment shown in Fig. 9, the P-channel MOS transistors and the N-channel MOS transistors of each inverter, e.g. transistors P1 and N1, and control transistor P11 are provided in reverse order as compared with the circuit shown in Fig. 5. The circuit with this arrangement is otherwise substantially the same as the circuit of Fig. 5. It should be noted, however, that a current control N-channel MOS transistor is provided between voltage terminal VSS and each of output nodes S1 to S5 of inverters I1 to I5. Since this invention aims at reducing the dissipation power, the aforementioned embodiments use CMOS devices having P-channel and N-channel MOS transistors. Fig. 10 is a circuit diagram showing a further embodiment of this invention wherein a diode D1 is coupled, in parallel but with the reverse polarity, to resistor R1 of bias control circuit B1 of the embodiment shown in Fig. 5, thus constituting bias control circuit B5. In the aforementioned embodiments, circuits I1 to I5 are explained as inverters constituting a ring oscillator. The word "inverter" here indicates a circuit which logically performs an inverting operation when operated, and is not used in a narrow sense. For all embodiments, transistors P16,N16,P19 and N19 need a small chip-occupying area, so that the chip-occupying area of the overall circuit is below one half of what is required for the conventional circuit. This feature solves one of the conventional problems which is concerned with the chip-occupying area. In the embodiment of Fig. 5, polysilicon resistor R1 may have to be as long as 10 mm, but this can be formed under an aluminium wire via an insulating layer so that the length does not increase the chip-occupying area. There will now be described the dependency on manufacturing processes. According to the conventional circuit, when the channel length or threshold voltage of a transistor varies, the current-biasing ability of the transistor varies about 30 to 50%, so does the oscillation frequency. However, since the oscillation frequency hardly depends on the current-biasing ability of the transistor in the aforementioned embodiments, the oscillation frequency does not depend on a variation in manufacturing processes and is always stable. A variation in a polysilicon resistance is about 10 %. As the ring oscillators of the aforementioned embodiments have a stable oscillation frequency, they do not waste the refresh current like the conventional one does and therefore realize a refresh timer with reduced dissipation power. The embodiment of Fig. 5 has been described with the case where current d1 equals current d2; however, these currents may have different values. More specifically, for example, currents d1 and d2 are equal to each other when transistors N16 and N11 have the same size; in general, the ratio of these currents can be set to the desired value by adjusting the channel lengths L and channel widths W of transistors N16 and N11. For instance, when the W/L ratio of transistor N16 is 50 µm/2 µm and the W/L ratio of transistor N11 is 10 µm/2 µm, d1:d2 = 50:10 = 5:1. In this case, to accurately realize this current ratio, it is recommended that transistors N16 and N11 have the same channel length, thus minimizing a deviation due to the short channel effect. To minimize a deviation due to the narrow channel effect, a plurality of transistors having the same channel width need to be coupled in parallel with one another. Fig. 11 is a circuit diagram illustrating the configuration of a further embodiment of this invention. This embodiment is designed to prevent a formation of a current path between voltage terminals VDD and VSS due to a gradual change in the output waveform of inverter I5, which may occur in the conventional circuit. In this embodiment, inverters I7 and I8 serving as buffers in the embodiment of Fig. 5 are eliminated, and NAND gate K1 and NOR gate K2, both of which receive the output signals from output nodes S5 and S2 of inverters I5 and I2 as their inputs, are provided. The circuit of Fig. 11 further has P-channel MOS transistor P31, having its source coupled to voltage terminal VDD, and N-channel MOS transistor N31, which has its source coupled to voltage terminal VSS and its drain coupled to the drain of transistor P31. These transistors P31 and N31 constitute wave shaper I11, and the former transistor P31 has its gate supplied with the signal from output node S11 of NAND gate K1 and the latter one has its gate supplied with the signal from output node S12 of NOR gate K2. In order to attain the same effect as provided by inverters I1 to I5, P-channel MOS transistors P32 and P33, which have their gates coupled to the gate of P-channel MOS transistor P16 of bias control circuit B1, are coupled to NAND gate K1 and NOR gate K2, respectively, on the voltage terminal VDD sides. N-channel MOS transistors N32 and N33, which have their gates coupled to the gate of N-channel MOS transistor N16, are coupled to NAND gate K1 and NOR gate K2, respectively, on the voltage terminal VSS sides. The signal from output nodes S13 of wave shaper I11 is output as an oscillation signal RING through inverters I12 and I13, and the output signal of inverter I13 is further output as an oscillation signal RING through another inverter I14. Fig. 12 shows the waveforms of the voltages at nodes S11 and S12 of the circuit shown in Fig. 11. As should be clear from these waveforms, N-channel MOS transistor N31 is turned on before t1 at which the voltage at node S12 becomes lower than threshold voltage VTN of the N-channel MOS transistors. In contrast, P-channel MOS transistor P31 is turned off before t1 since the voltage at node S11 during this period is above (VDD - VTP). Both of P-channel MOS transistor P31 and N-channel MOS transistor N31 are turned off between t1 and t2 where the voltage at node S11 becomes lower than (VDD - VTP). After t2, the voltage at node S11 is below (VDD - VTP), turning on P-channel MOS transistor P31, but the voltage at node S12 is below VTN, turning off N-channel MOS transistor N31. Therefore, transistors P31 and N31 are never simultaneously turned on at any time, thus preventing a current path between voltage terminals VDD and VSS from being formed and thereby realizing an MOS semiconductor circuit with reduced dissipation power. Although the currents generated in NAND gate K1 and NOR gate K2 flow between voltage terminals VDD and VSS, they do not raise any problem because these currents are controlled by current control transistors P32, P33, N31 and N33. When a change in the voltage waveform of the output at node S13 of wave shaper I11 is so gentle that such a current flowing between the voltage terminals may raise a problem in inverter I12, two series-connected buffer inverters need to be provided at the preceding stage of inverter I12. To reduce the overall current flowing between the voltage terminals, it is recommended that the first-stage inverter of the two buffer inverters be constituted by a transistor having a small conductance, while the other buffer inverter be constituted by a transistor having a large conductance. In the embodiment of Fig. 11, between t1 and t2 shown in Fig. 12, both of P-channel MOS transistor P31 and N-channel MOS transistor N31 are off, the impedance between voltage terminals VDD and VSS as viewed from node S13 is high. Although this high impedance does not normally raise any crucial problem, the high impedance period between t1 and t2 had better be as short as possible. To realize this condition, both input nodes of each of NAND gate K1 and NOR gate K2 had better be as close to each other as possible. In other words, since it is necessary that the signals coming in these two input nodes of each gate should be in phase, it is best that two inverters are prevent between the two input nodes, i.e., it is best that a single inverter exists between these two inverters, which respectively supply their output signals to NAND gate K1 and NOR gate K2. According to this embodiment, the signals from the output nodes of two of five inverters I1 to I5, namely I2 and I5, are used in order to obtain the waveforms at nodes S11 and S12, as shown in Fig. 12. This may be modified such that the signal from the output node of one inverter and its delayed signal are used for the same purpose. Moreover, when the high impedance of output node S13 is not allowable, the circuit of Fig. 11 may be modified as shown in Fig. 13. Fig. 13 is a circuit diagram showing another embodiment of this invention. The circuit of this embodiment is the circuit of Fig. 11 added with an inverter I15. Inverter I15 receives the output signal of inverter I12 and its output is fed back to output node S13 of wave shaper I11. Like inverters I1 to I5, inverter I15 has its operation current path coupled to P-channel MOS transistor P34 and an N-channel MOS transistor N34, which control the operation current. With the above configuration, even when the state at which the signal at output node S13 of inverter I11, is kept at either "1" or "0" by P-channel MOS transistor P31 or N-channel MOS transistor N31 changes to the state at which both of transistors P31 and N31 are turned off so that output node S13 will be set into the high impedance state, the feedback by inverter I15 keeps the state of output node S13 unchanged. That is, there is no time period in which output node S13 is in the high impedance state. Although this invention has been described with reference to a ring oscillator which is one application of this invention, this invention can apply to other semiconductor circuits as well. The general concept of this invention is illustrated in Fig. 14. The MOS semiconductor circuit of Fig. 14 comprises logical circuits 10, current control P-channel MOS transistors 11 respectively provided between voltage terminal VDD and the source voltage nodes of these logical circuits, current control N-channel MOS transistors 12 respectively provided between voltage terminal VSS and the reference voltage node of logical circuits 10, N-channel MOS transistor 16, which has its gate and drain short-circuited and constitutes a current mirror circuit in association with the individual transistors 12, and current control means 15 expressed as a polysilicon resistor. This semiconductor circuit can be easily designed to have a specific temperature characteristic or source-voltage dependency. When this invention is applied to a ring oscillator as per the aforementioned embodiments, inverters I1 to I5 can have the same layout, ensuring that the current control transistors are formed with less variation therein. In a ring oscillator, since the falling and rising of signals occur at mutually close timings, the total operation current will not greatly vary. As a result, the noise originating from a variation in the operation current can be considerably suppressed, thus providing a stable oscillating operation.

Claims: An MOS semiconductor circuit comprising: first and second voltage terminals (VDD and VSS); cascade-connected logic circuits (I1 to I5); a first MOS transistor circuit having first MOS transistors (P11 to P15) coupled between said first voltage terminal (VDD) and output nodes of respective logic circuits (I1 to I5); a second MOS transistor (P16) having the same conductivity type as said first MOS transistors (P11 to P15) and having a source, a gate coupled to a gate of said first MOS transistors (P11 to P15) and a drain coupled to said gate of said second MOS transistor (P16) ; a current control circuit (R1), coupled to said drain of said second MOS transistor (P16), for causing a predetermined current to flow through the source-drain path of said second MOS transistor (P16); a second MOS transistor circuit having third MOS transistors (N11 to N15) coupled between said second voltage terminal (VSS) and respective output nodes of said logic circuits (I1 to I5); and a fourth MOS transistor (N16) having the same conductivity type as said third MOS transistor (N11 to N15) and having a gate coupled to a gate of said third MOS transistors (N11 to N15) and a drain coupled to said gate of said fourth MOS transistor (N16); characterized in that: said current control circuit comprises a polysilicon resistor (R1) connected between said drains of said second and fourth MOS transistors (P16 and N16). An MOS semiconductor circuit comprising: first and second voltage terminals (VDD and VSS); cascade-connected logic circuits (I1 to I5); a first MOS transistor circuit having first MOS transistors (P11 to P15) coupled to said first voltage terminal (VDD) in series with respective logic circuits (I1 to I5); a second MOS transistor (P17) having the same conductivity type as said first MOS transistors (P11 to P15) and having a source, a gate coupled to a gate of said first MOS transistors (P11 to P15) and a drain coupled to said gate of said second MOS transistor (P17); a first current control circuit (R2), coupled to the drain of said second MOS transistor (P17), for causing a first predetermined current to flow through the source-drain path of said second MOS transistor (P17); a second MOS transistor circuit having third MOS transistors (N11 to N15) coupled to said second voltage terminal (VSS) and in series with respective said logic circuits (I1 to I5); a fourth MOS transistor (N17) of said current control circuit having the same conductivity type as said third MOS transistors (N11 to N15) and having a source, a gate coupled to a gate of said third MOS transistors (N11 to N15) and a drain coupled to said gate of said fourth MOS transistor (N17); and a second current control circuit (R3) coupled to the drain of said fourth MOS transistor (N17) for causing a second predetermined current to flow through the source drain path of said fourth MOS transistor; characterized in that: the first current control circuit comprises a first polysilicon resistor (R2) coupled between the drain of said second MOS transistor (P17) and the second voltage supply terminal (VSS) to provide said first predetermined current; and the second current control circuit comprises a second polysilicon resistor (R3) coupled between the drain of said fourth MOS transistor (N17) and said first voltage supply terminal (VDD) to provide said second predetermined current. The MOS semiconductor circuit according to claim 1 or 2, characterized in that a diode (D1) is coupled in parallel with the or each polysilicon resistor (R1;R2;R3). The MOS semiconductor circuit according to any preceding claim, characterized in that said first and second MOS transistors (P11 to P15 and P16) have the same channel length. The MOS semiconductor circuit according to any of claims 1 to 3, characterized in that said first and second MOS transistors (P11 to P15 and P16) have the same channel width. The MOS semiconductor circuit according to any preceding claim, characterized in that each of said logic circuits comprises an inverter (I1 to I5), and said logic circuits include NOR and NAND gates (K2 and K1), both for receiving in-phase output signals from two of said inverters (I1 to I5), and a wave shaping circuit (I11) for generating output signals, corresponding to said output signals from said two inverters, in response to output signals of said NOR and NAND gates (K2 and K1). The MOS semiconductor circuit according to any of claims 1 to 5, characterized in that each of said logic circuits comprises an inverter (I1 to I5) and an output terminal of the last stage of said inverters (I1 to I5) is coupled to an input terminal of the first stage of said inverters (I1 to I5), thereby constituting a ring oscillator. The MOS semiconductor circuit according to claim 7, characterized by further comprising NOR and NAND gates (K2 and K1) for receiving in-phase output signals of two of said inverters (I1 to I5), and a wave shaping circuit (I11) for generating output signals, corresponding to said output signals of said two inverters, in response to output signals of said NOR and NAND gates (K2 and K1). The MOS semiconductor circuit according to claim 6 or 8, characterized in that said wave shaping circuit has a P-channel MOS transistor (P31) having a gate coupled to an output terminal of said NAND gate (K1), and an N-channel MOS transistor (N31) having a gate coupled to an output terminal of said NOR gate (K2), said P-channel MOS transistor (P31) and said N-channel MOS transistor (N31) being coupled in series between said first and second voltage terminals (VDD and VSS). The MOS semiconductor circuit according to claim 9, characterized by further comprising feedback means (I12 and I15), coupled to an output terminal of said wave shaping circuit (I11), for stabilizing a potential of said output terminal of said wave shaping circuit (I11).

Inventors: SAKURAI, TAKAYASU
Applicants: KABUSHIKI KAISHA TOSHIBA
Application year: 1987
Main classification: H03K3
IPC codes: H03K5, H03K3