SEMICONDUCTIVE CERAMIC COMPOSITION

Abstract: A semiconductive ceramic composition for a reduction reoxidation type semiconductive ceramic capacitor capable of increasing capacitor, dielectric strength of the capacitor and improving temperature characteristics of the capacitor. The composition includes a BaTiO₃ base component and a minor component consisting of Nb and Ce. Nb and Ce are present in amounts of 0.2 to 3.0 mol% on Nb₂O₅ and CeO₂ bases. Addition of Co and the like increases insulation resistance and D.C. breakdown voltage of the capacitor and further improves temperature characteristics of the capacitor.

Description: BACKGROUND OF THE INVENTION Field of the Invention This invention relates to a semiconductive ceramic composition for a semiconductive ceramic capacitor, and more particularly to a semiconductive ceramic composition suitable for use for manufacturing of a reduction and reoxidation type semiconductive ceramic capacitor. Description of the Prior Art A semiconductive ceramic capacitor serving as a passive electronic circuit element is generally classified into two types or a boundary-layer type and a surface-layer type. The boundary-layer type semiconductive ceramic capacitor includes a boundary insulation type one and the surface-layer type semiconductive ceramic capacitor includes a barrier-layer type one and a reduction reoxidation type one. From JP-A-61 099 207 and JP-A-57 208 003 there is known a semiconductive ceramic composition comprising a BaTiO₃ base component and a minor component comprising Nb and Ce. The addition of MnO₂, SiO₂, CaCO₃ and Y₂O₃ as minor components in Barium Titanate semiconductor compositions as well as compacting and sintering this mixture is already disclosed in JP-A-57 128 903. Such a semiconductive ceramic capacitor, particularly a reduction reoxidation type semiconductive ceramic capacitor generally has a disadvantage that an increase in unit area capacity expressed at µF/cm² causes a significant decrease in breakdown voltage, resulting in an increase in dielectric loss and/or deterioration of temperature characteristics. SUMMARY OF THE INVENTION The present invention has been made in view of the foregoing disadvantage of the prior art. Accordingly, it is an object of the present invention to provide a semiconductive ceramic composition for a semiconductive ceramic capacitor which is capable of causing the capacitor to exhibit not only increased unit area capacity but increased dielectric strength and excellent temperature characteristics. It is another object of the present invention to provide a semiconductive ceramic composition for a semiconductive ceramic capacitor which is capable of improving insulation resistance and D.C. breakdown voltage of the capacitor. It is a further object of the present invention to provide a semiconductive ceramic composition for a reduction reoxidation type semiconductive ceramic capacitor which is capable of causing the capacitor to exhibit not only increased unit area capacity but increased dielectric strength and excellent temperature characteristics. It is still another object of the present invention to provide a semiconductive ceramic composition for a reduction reoxidation type semiconductive ceramic capacitor which is capable of improving insulation resistance and D.C. breakdown voltage of the capacitor. In accordance with the present invention, a semiconductive ceramic composition is provided which comprises a BaTiO₃ base component, a minor component comprising Nb and Ce, and an additive component comprising Co, Mn, SiO₂ and SrTiO₃. Nb and Ce are present at 0.2 to 3.0 mol% on Nb₂O₅ and CeO₂ bases, respectively. Co and Mn are present at 0.8 wt% or less and 0.25 wt% or less on Co₃O₄ and MnCO₃ bases, respectively. SiO₂ and SrTiO₃ are present in amounts of 0.25 wt% or less and 0.5 to 20.0 wt%. Y may additionally be present at 0.1 to 3.0 wt% on a Y₂O₃ basis. DETAILED DESCRIPTION OF THE INVENTION The present invention is directed to a semiconductive ceramic composition for a semiconductive ceramic capacitor, particularly, a reduction reoxidation type semiconductive ceramic capacitor which comprises a BaTiO₃ base component and a minor component comprising Nb and Ce, and an additive component comprising Co, Mn, SiO₂ and SrTiO₃. Nb and Ce are present in amounts of 0.2 to 3.0 mol% on Nb₂O₅ and CeO₂ bases, respectively. Co and Mn are present in amounts of 0.8 wt% or less and 0.25 wt% or less on Co₃O₄ and MnCO₃ bases, respectively. SiO₂ and SrTiO₃ are present in amounts of 0.25 wt% or less and 0.5 to 20.0 wt%, respectively. Use of the so-formulated composition for a semiconductive ceramic capacitor, particularly, a reduction and reoxidation type one likewise causes the capacitor to be substantially increased in capacity and dielectric strength and positively exhibit good temperature characteristics. The composition may further contain Y, which may be present in an amount of 0.1 to 3.0 wt% on a Y₂O₃ basis. Addition of Y causes the capacitor to exhibit improved insulation resistance and D.C. breakdown voltage and more temperature characteristics. Each of the so-formulated semiconductive ceramic composition may be compacted into a semiconductive ceramic element and sintered to cause a surface layer of the element to be insulated. The invention will be understood more readily with reference to the following examples, however, these examples are intended to illustrate the invention and are not to be construed to limit the scope of the invention. Example 1 BaCO₃, TiO₂, Nb₂O₅, CeO₂, Co₃O₄, MnCO₃, SiO₂, SrCO₃ and Y₂O₃ each having an industrial grade were used as starting materials. The materials were weighed so that each composition may be obtained which has a composition ratio as shown in Table 1. The materials were subjected to wet blending in a ball mill of synthetic resin using water and pebbles for 20 hours while stirring to prepare a composition mixture. Then, the so-obtained mixture was dewatered and dried, and provisionally burned at 1200°C for 2 hours. Subsequently, the mixture was powdered and blended for 20 hours by means of the ball mill and then dewatered and dried, to which polyvinyl alcohol (PVA) in an amount of 2 wt% was added as an organic binder to carry out granulation and grading to prepare granulated powder of the composition. The powder was then formed into a disc-like compact or semiconductive ceramic element of 10mm in diameter and 0.5mm in thickness at compacting pressure of about 3 tons/cm² (294 MPa). The element was heat-treated at 800°C for 1 hour to remove the binder therefrom and then subjected to burning at about 1300°C for about 2 hours. Then, it was subjected to reduction at 800°C for 2 hours in a stream of a reducing atmosphere (H₂ atmosphere) to prepare a reduction reoxidation type semiconductive ceramic element, which was then heat-treated at 800°C for 2 hours in an oxidising atmosphere (air). This caused reoxidation of only a surface of the element, resulting in the surface being provided with an insulating property. Thereafter, an Ag paste was applied onto both surfaces of the semiconductive ceramic element by printing and then baked at 800°C to form electrodes, resulting in a reduction reoxidation type semiconductive ceramic capacitor. A test was then carried out to consider electrical characteristics of the so-manufactured capacitor. The results were as shown in Table 1, wherein capacity and dielectric loss (tan δ) were measured at a frequency of 1kHz and insulation resistance was measured at a room temperature of 20°C while applying D.C. voltage of 25V to the capacitor. Table 1 indicates that Nb₂O₅ in an amount below 0.2 mo% or exceeding 3.0 mol% causes the capacitor to be decreased in unit area capacity C and increased in dielectric loss tan δ, as well as decreased in insulation resistance IR and D.C. breakdown voltage Vb (Specimen Nos. 1, 2, 3, 17, 18 and 19). Also, it indicates that CeO₂ below 0.2 mol% causes the capacitor to be decreased in capacity and increased in dielectric loss; whereas when the amount of CeO₂ is above 3.0 mol%, the capacitor is increased in dielectric loss and exhibits improper temperature characteristics (Specimen Nos. 1, 3, 8, 13, 17 and 19). Co₃O₄ in an amount above 0.8 wt% and MnCO₃ above 0.25 wt% caused the capacity to be decreased (Specimen No. 24) and the D.C. breakdown voltage to be decreased (Specimen No. 27). Further, SiO₂ exceeding 0.25 wt% led to a decrease in capacity, insulation resistance and D.C. breakdown voltage of the capacitor (Specimen No. 30). Further, SrTiO₃ less than 0.5 wt% failed in a significant decrease in dielectric loss of the capacitor, whereas when SrTiO₃ exceeds 20.0 wt%, the capacitor failed to exhibit good temperature characteristics and was decreased in insulation resistance and D.C. breakdown voltage (Specimen Nos. 31, 36, 38, 39, 40, 43, 44, 47 and 49). Furthermore, Table 1 indicates that Y₂O₃ in an amount below 0.1 wt% decreases D.C. breakdown voltage of the capacitor and Y₂O₃ above 3.0 wt% decreases the capacity (Specimen Nos. 37 and 48). Thus, it will be noted that the semiconductive ceramic composition of the present invention effectively exhibits the above-noted advantages. In connection with the above table 1 the terms "temperature characteristics T.C.(%)" indicate a rate of change of electrostatic capacity depending upon a temperature which is measured at each -25°C and +85°C and calculated according to the following equations, with temperature characteristics at -25°C: (C₋₂₅ - C₂₀)/C₂₀ x 100 (%), with temperature characteristics at +85°C: (C+₈₅ - C₂₀)/C₂₀ x 100 (%), wherein C₋₂₅ is electrostatic capacity at -25°C, C+₈₅ is electrostatic capacity at +85°C, and C₂₀ is electrostatic capacity at 20°C.

Claims: A semiconductive ceramic composition comprising: a base component comprising BaTiO₃; and a minor component comprising Nb and Ce; said Nb and Ce being present in amounts of 0.2 to 3.0 mol% on Nb₂O₅ and CeO₂ bases, respectively; characterized by an additive component comprising Co, Mn, SiO₂ and SrTiO₃, said Co and Mn being present in amounts of 0.8 wt% or less and 0.25 wt% or less on Co₃O₄ and MnCO₃ bases, respectively, and said SiO₂ and SrTiO₃ being present in amounts of 0.25 wt% or less and 0.5 to 20.0 wt%, respectively. A semiconductive ceramic composition as defined in Claim 1 further comprising Y, said Y being present in an amount of 0.1 to 3.0 wt% on a Y₂O₃ basis.

Inventors: ITAGAKI, SHUICHI, KIKUCHI, NOBUAKI, ONO, SHUICHI, YAHAGI, MASAHIRO
Applicants: TDK CORPORATION
Application year: 1987
Main classification: C04B35
IPC codes: H01G4, C04B35