Solid state image pickup apparatus

Abstract: A solid state image pickup apparatus having a selector for selecting a plurality of sensor outputs through predetermined circuits includes a difference processing circuit for calculating a difference between a selected sensor signal and a reference signal selected through the same predetermined circuit as that of the selected sensor signal. The difference processing circuit includes a first holding circuit for holding the sensor signal, a second holding circuit for holding the selected reference signal, and a circuit for receiving the output signals from the first and second holding circuits and outputting a signal corresponding to a difference therebetween.

Description: BACKGROUND OF THE INVENTION Field of the Invention The present invention relates to a solid state image pickup apparatus for selectively reading out a plurality of sensor signals and, more particularly, to a solid state image pickup apparatus capable of eliminating unnecessary components such as variations in dark signals and drive noise. Related Background Art Fig. 1A is a schematic circuit diagram of a known solid-state image pickup apparatus. Referring to Fig. 1A, signals from sensors S1 to Sn are respectively amplified by amplifiers A1 and An, and transistors T1 to Tn are sequentially turned on. A dot sequential output appears on an output line 101. The dot sequential signal is amplified by a buffer amplifier 102, and the resultant signal appears as an output signal Vout. In the known image pickup apparatus described above, variations in input/output characteristics of the amplifiers A1 to An are included in the sensor signals forming the dot sequential output appearing on the output line 101. As a result, fixed pattern noise undesirably occurs. Fig. 1B shows a schematic arrangement of another known photoelectric transducer apparatus. Referring to Fig. 1B, signals read out from photosensors S1 to Sn are temporarily stored in storage capacitors C1 to Cn. Transistors T1 to Tn are sequentially turned on at timings of a scanning circuit SH, and the readout signals sequentially appear on an output line 101 and are output to an external device through an amplifier 102. In the above photoelectric transducer apparatus, however, unwanted components such as dark signals and drive noise of the photosensors are undesirably included. Drive noise is defined as noise generated when a photosensor is driven to read out a signal. The drive noise components are noise caused by manufacturing variations such as element shapes, and smear caused by element isolation and depending on radiation amounts. The dark signal is defined as a dark current of a photosensor and greatly depends on accumulation time and on the temperature of the photosensor. This drive noise will be described in detail. Variations in drive capacitance of a drive element for driving a photoelectric transducer element and variations in capacitance of a photoelectric transducer element cause variations in the leakage component of drive pulses. These variation components form an information signal superposed on the desired photoelectric transducer signal, and are read out. The cause of generation of drive noise will be described below. Fig. 1C is a schematic view of a photoelectric transducer element described in JP-A-12764/1985, Fig. 1D is a timing chart of drive pulses for driving the photoelectric transducer element shown in Fig. 1C, and Fig. 1E is a chart showing the base potential of the photoelectric transducer element. Referring to Fig. 1C, the photoelectric transducer element includes a base accumulation type bipolar transistor B, a drive capacitor Cox for reverse- or forward-biasing the transistor B in response to a drive pulse ør, and a refresh transistor Qr. The transistor B has junction capacitances Cbc and Cbe. It should be noted that Cox, Cbc, and Cbe are referred to as capacitances or capacitors hereinafter, as needed. The capacitances Cox, Cbc, and Cbe are added to obtain a charge storage capacitance Ctot. The operation of the photoelectric transducer element will be described below. Assume that the initial value of a base potential VB is given as V0. When the drive pulse r is set at a potential Vr at time t1, a voltage Va is applied to the base of the transistor B through the drive capacitor Cox. In this case, the voltage Va can be represented as follows: Va = Cox/(Cox + Cbc + Cbe) x Vør = (Cox/Ctot) x Vør When the refresh pulse rh is set at a high potential at time t2, the transistor Qr is turned on. When the transistor B is forward-biased, the base potential VB abruptly decreases. A time interval TC between time t2 and time t3 is a so-called refresh time interval. The drive pulse r is set to zero at time t3, and a voltage -Va is added to the base voltage VB, so that the base voltage VB is set at V2. This reverse-biased state is the accumulation state. The above description was confined to one photoelectric transducer element. However, a line or area sensor has a large number of photoelectric transducer elements. The capacitances of the capacitors Cox, Cbc, and Cbe between a large number of photoelectric transducer elements vary by a few fractions of 1%. For example, if the following conditions are given: Cox = Cbc = Cbe ≃ 0.014 pF, and Vr = 5 V and the capacitance variation is 0.2 %, then a variation ΔVa in capacitance division voltage Va is about 3 mV. The variation ΔVa can be reduced by refreshing. However, when the refresh mode is changed to an accumulation operation mode (time t3), the variation occurs again to produce ΔVb. The variation ΔVb does not satisfy relation ΔVb = -ΔVa, and no correlation can be established therebetween according to test results. The above fact is assumed to be due to different bias voltage dependencies of Cbc and Cbe. In the next read cycle, when the transistor B is forward-biased, the variation in base potential thereof is approximated as follows: ΔV 2 ≃ ΔVa 2 + ΔVb 2 + 2KΔVaΔb where K is -1 or more. As a result, the variation ΔV becomes steady drive noise of about 4 to 5 mV. The variation in leakage component of such a drive pulse (to be referred to as drive noise hereinafter) is eliminated by a known technique in which the above drive noise is stored in a memory means and is read out and subtracted from the signal read out from the sensor to obtain a true information signal. The known drive noise correction technique described above results in a bulky, expensive photoelectric transducer element. In particular, in case of that the numbers of elements arranged in the horizontal direction and vertical direction are five hundred respectively, an area sensor requires 250,000 photoelectric elements arranged in a matrix form. In addition, when the resolution of the sensor is also taken into consideration, a memory of several megabits is required. The unwanted signals such as drive noise and a dark signal pose serious problems when an image of a dark object is to be picked up, i.e., image pickup at a low intensity. In the low-intensity image pickup mode, an information signal level is low and accordingly the S/N ratio is degraded. As a result, image quality is degraded. In order to improve image quality, the unwanted signals must be reduced. As described above, however, the dark signal primarily depends on temperature and charge accumulation time, although the drive noise rarely depends thereon. If these unwanted signals are to be be eliminated, the dark signal must be separated from the drive noise and a correction coefficient must be determined, thus requiring a large-capacity memory. As a result, signal processing is complicated and expensive, and an image pickup apparatus is undesirably bulky. US-A-4600843 (and EP-A-0108308) discloses an arrangement in which a plurality of photodiodes are connected to a common output line through a respective plurality of switches. In operation, each photodiode is read out twice in succession. The output line is cleared between the two times each photodiode is read out. It is stated that the photodiode is discharged when it is first read out, so that the first signal is a light information signal and the second signal is a noise signal provided by the discharged photodiode. When each signal is read, it is output to the common output line, and is connected from the common output line through a buffer amplifier to one terminal of a differential amplifier. Additionally, the first signal is supplied to a sample-and-hold circuit, the output of which is provided to the other input of the differential amplifier, so that when the second signal is read out the differential amplifier acts to output the difference between the two signals, thereby removing the noise signal from the light information signal. US-A-4584607 discloses an arrangement in which a plurality of photodiodes are divided into two groups. A respective amplifier is provided for each group, and the photodiodes of each group are connected in common through switch means to the respective amplifier. A signal current, following light irradiation, is read out from a photodiode of one group while a dark current is read out from a photodiode of the other group. These currents are amplified by the respective amplifiers, and provided to a differential amplifier. The differential amplifier provides a difference between the signal following light irradiation from one photodiode and the dark current signal from the other photodiode. In an alternative arrangement, all photodiodes are connected to provide outputs to the same amplifier, and a photodiode is read out twice in quick succession so that in the first readout a current signal is provided in accordance with the light irradiation and in the second readout a dark current signal is provided. The first and second current signals pass in turn through the common amplifier, and are integrated in respective integrators. The currents are provided by readout pulses having the same pulse width, and after the end of the second readout the integrator outputs are provided to respective inputs of a differential amplifier to obtain an output signal from which the dark current has been removed. US-A-4079423 proposes a charge injection device imager in which each row is read out in a conventional destructive manner and is immediately reread before a renewed image induced charge has been acquired. The output from each readout from the row passes through processing circuits and then passes directly to one input of a differential amplifier and also passes to the other input of the differential amplifier via a one line delay circuit. Consequentially, the differential amplifier outputs the difference between the two readouts from the row of the imager, thereby removing the noise represented by the second reading of the row immediately after the previous destructive readout. Between the imager and the differential amplifier, both readouts from each row of the imager pass through the same processing circuits, which include amplifiers, filters and arrangement for adding and subtracting signals from adjacent columns in order to improve signal-to-noise ratio. EP-A-0232593 proposes an arrangement in which there is an array of photosensor cells and arrangement to read a light irradiation signal from each cell and also a dark voltage signal from each cell. The light irradiation signals from all cells are provided to a first common output line and the dark voltage signals from all cells are provided to a second common output line. In one embodiment, each output line has a respect output amplifier leading to a respective output terminal, so that one terminal provides a string of light irradiation signals and the other terminal provides a string of dark voltage signals. In other embodiment, the two output lines are connected to respective inputs of a differential amplifier, so as to provide an output representing the actual light information from which the dark voltage components have been removed. JP-A-60-69969 discloses an arrangement in which each of an array of photodiodes is read out in turn through a respective preamplifier onto a common first output line, which is connected to a sample-and-hold circuit. Simultaneously with reading out from one photodiode through its preamplifier onto the first output line, the preamplifier of the preceding photodiode has its input grounded while its output is connected to a common second output line. The sample-and-hold circuit and the second output line are input to a differential amplifier, so as to obtain the photodiode signal with the offset voltage of the preamplifier removed. SUMMARY OF THE INVENTION According to the present invention there is provided image pickup apparatus as set out in claim 1. Optional features are set out in the remaining claims. An embodiment of the present invention seeks to compensate for variations in electrical characteristics of a plurality of amplifiers arranged for sensor cells. In an embodiment of the present invention, there is provided a solid state image pickup apparatus having a selector for selecting a plurality of sensor signals through corresponding amplifiers, comprising a processing circuit for calculating a difference between a selected sensor signal and a reference signal selected through the same amplifier as the selected sensor signal. The sensor signal selected by the selector, therefore, includes a noise component caused by variations in amplifier characteristics since the sensor signal is amplified by the corresponding amplifier. For this reason, the reference signal is selected through the same amplifier which has amplified the sensor signal, so that the amplifier noise is superposed on the reference signal. A difference between the selected sensor signal and the selected reference signal is calculated to eliminate the noise component. A MOS, electrostatic induction, or base accumulation type photosensor may be used as a photoelectric transducer element. "Refreshing" of the photoelectric transducer element means erasure of optical information of optical information of the photoelectric transducer element. In some photosensors, optical information is erased simultaneously when the information is read out. However, in some photosensors, optical information is kept unerased even after the information is read out. Embodiments of the present invention will be described in conjunction with the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1A is a schematic circuit diagram of a known solid state image pickup apparatus; Fig. 1B is a schematic view of another known solid state image pickup apparatus; Figs. 1C to 1E are views for explaining the principle of generation of drive noise of a photoelectric transducer element; Figs. 2A and 2B are schematic circuit diagrams showing a solid state image pickup apparatus according to an embodiment of the present invention; Fig. 3 is a circuit diagram showing an arrangement of switches SW1 to SWn in the apparatus of Fig. 2A; Fig. 4A is a circuit diagram showing another arrangement of a difference processing circuit in the apparatus of Fig. 2A; Fig. 4B is a timing chart for explaining the operation of the difference processing circuit shown in Fig. 5A; Fig. 5 is a block diagram showing an image pickup system using the apparatus (of any embodiment described above) as an image pickup device; Fig. 6A is a schematic sectional view of a photoelectric transducer cell described in JP-A-12759/1985 to 12765/1985. Fig. 6B is an equivalent circuit diagram thereof. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of the present invention will be described with reference to the accompanying drawings hereinafter. Fig. 2A is a schematic circuit diagram of a solid state image pickup apparatus according to an embodiment of the present invention. Referring to Fig. 2A, switches SW1 to SWn are arranged to select corresponding inputs in response to pulses cl to cn. The switches SW1 to SWn respectively receive sensor signals S1 to Sn from photosensors S1 to Sn arranged in a line or a matrix form. The switches SW1 to SWn also receive signals E from reference signal sources E, respectively. The output terminals of the switches SW1 to SWn are respectively connected to the input terminals of amplifiers A1 to An. The output terminals of the amplifiers A1 to An are connected to an output line 101 through corresponding transistors T1 to Tn. Pulses 1 to n from a scanning circuit SH such as a shift register are respectively supplied to the gate electrodes of the transistors T1 to Tn. The transistors T1 to Tn are turned on in response to the pulses 1 to n. The output line 101 is grounded through a transistor 103. A pulse hrs is applied to the gate electrode of the transistor 103. The output line 101 is also connected to a difference processing circuit 1. An output signal Vout free from noise components is output from the difference processing circuit 1. In the difference processing circuit 1 in this embodiment, the output line 101 is connected to an amplifier 11. The input terminals of sample/hold (S/H) circuits 12 and 13 are connected to the output terminal of the amplifier 11. Pulses h1 and h2 as control signals are respectively supplied to the S/H circuits 12 and 13 so that the S/H circuits 12 and 13 hold the inputs at the input timings of these pulses, respectively. The output terminals of the S/H circuits 12 and 13 are respectively connected to the noninverting and inverting input terminals of a differential amplifier 14. The output signal Vout is output from the differential amplifier 14. The operation of this embodiment will be described below. When the reference E is input to the amplifier A1 upon operation of the switch SW1, the reference signal E is amplified by the amplifier A1, and an amplified signal E1' is output to the transistor T1. In this case, only the transistor T1 is kept on in response to the pulse 1, and other transistors T2 to Tn are kept off. The reference signal E1' is selected by the transistor T1 and appears on the output line 101. The reference signal E1' is held in the S/H circuit 12 after passing through the amplifier 11. More specifically, the pulse h1 is supplied to the S/H circuit 12 when it holds the reference signal E1'. The reference signal E1' held by the S/H circuit 12 is a signal reflecting variation characteristics of the amplifier A1, i.e., a signal including a noise component N1 which becomes a fixed pattern noise. In other words, E1' = E + N1. Subsequently, the transistor 103 is turned on in response to the pulse hrs to remove the charge left on the output line 101. An output signal from the sensor S1 is input to the amplifier A1 through the switch SW1. In the same manner as described above, a sensor signal S1' amplified by the amplifier A1 appears on the output line 101 through the ON transistor T1 and is held by the S/H circuit 13 after passing through the amplifier 11. The sensor signal S1' held by the S/H circuit 13 also reflects variation characteristics, i.e., a signal including the noise component N1 (S1' = S1 + N1). When the reference signal E1' and the sensor signal S1' are respectively held by the S/H circuits 12 and 13, the signals S1' and E1' are input to the differential amplifier 14. The output Vout from the differential amplifier 14 is a difference (S1' - El') between the sensor and reference signals S1' and E1', thereby obtaining a signal (Sl - E) free from the noise component N1. In this case, the reference signal E represents the reference level of the sensor signal S1, so that E = 0 is established. Therefore, the output signal Vout is the sensor signal S1 before being subjected to the influence of the amplifier A1. When the sensor signal S1 is output in this manner, the residual charge on the output line 101 is eliminated by the transistor 103. At the timings in the same manner as described above, the sensor signals S2 to Sn free from the noise components N2 to Nn are sequentially output from the differential amplifier 14. In the above description, the reference signal E is read out prior to the corresponding sensor signal. However, each sensor signal may be read out prior to the reference signal E. In the above description, the reference and sensor signals E1' and S1' are held in the separate S/H circuits, respectively. However, one of the S/H circuits may be omitted, and the output terminal of the amplifier 11 may be directly connected to the amplifier 14 (Fig. 2B). In this case, one readout signal is held by the S/H circuit 12 in response to the pulse h1, and the output signal Vout is output from the differential amplifier 14 at the read timing of the other readout signal. Fig. 3 is a circuit diagram showing an arrangement of switches SW1 to SWn in the apparatus shown in Fig. 2A. Referring to Fig. 3, a transistor 201 is turned on in response to a pulse t to store the sensor signal S1 in a capacitor C1. Subsequently, a transistor 203 is turned on in response to a pulse cb to output the reference signal E to the amplifier A1. When the reference signal E1' is held as described above, the transistor 202 is turned on in response to a pulse ca to output the sensor signal S1 from the capacitor C1 to the amplifier A1. The switches SW2 to SWn have the same arrangement as that of the switch SW1, and operations of the switches SW2 to SWn are also the same as that of the switch SW1. Fig. 4A is a circuit diagram showing another arrangement of the difference processing circuit in the apparatus shown in Fig. 2A, and Fig. 4B is a timing chart for explaining the operation thereof. Difference processing is performed by a clamping circuit in this arrangement. Referring to Figs. 4A and 4B, the reference signal E1' amplified by the amplifier A1 appears on the output line 101, is input to a clamp circuit through an amplifier comprising transistors 15 and 16. In this case, the clamp circuit comprises a capacitor 17 and a transistor 18. Since the transistor 18 in the clamp circuit is kept on in response to a clamp pulse s, the level of the reference signal E1' is clamped as the reference level. As a result, the sensor signal S1' subsequently appearing on the output line 101 is amplified by an amplifier of transistors 19 and 20 using the reference signal E1' as a reference level. In the same manner as in Fig. 1, the output signal Vout is obtained by removing the reference signal E1' from the sensor signal S1'. Similarly, the clamp pulse øs is generated at a read timing of the reference signal E2', and the sensor signals S2 to Sn free from the noise components are sequentially output. Fig. 5 shows a schematic arrangement of an image pickup system using any one of the image pickup apparatuses of the embodiments as an image pickup device. Referring to Fig. 5, an image pickup device 601 comprises an image pickup apparatus of any one of the above embodiments. The gain or the like of the output signal Vout is controlled by a signal processing circuit 602, and the resultant signal is output as a video signal. Various pulses  for driving the image pickup device 601 are supplied from a driver 603. The driver 603 is operated under the control of a control unit 604. The control unit 604 controls the gain or the like of the signal processing circuit 602 on the basis of the output from the image pickup device 601 and also controls an exposure control unit 605 to adjust an amount of light incident on the image pickup device 301. As described above, in the solid state image pickup apparatus according to the above embodiments, the difference between the selected sensor signal and the selected reference signal is calculated to obtain an output signal free from the noise components. Therefore, the variations in readout signal depending on the potential variations of the input/output characteristics of the selector can be corrected. The fixed pattern noise caused by the variations in amplifier characteristics can be eliminated. A photoelectric transducer element used in Figs. 2A to 5 will be described as a supplementary explanation of Figs. 1C to 1E. Fig. 6A is a schematic sectional view of a potoelectric transducer cell described in JP-A-12759/1985 to 12765/1985, and Fig. 6B is an equivalent circuit diagram of the cell. Referring to Figs. 6A and 6B, photoelectric transducer cells are formed on an n + -type silicon substrate 701, and each photoelectric transducer cell is electrically insulated from adjacent photoelectric transducer cells by an element isolation region 702 made of SiO 2 , SiH 3 N 4 , or polysilicon. Each photoelectric transducer cell has the following structure. A p-type region 704 doped with a p-type impurity is formed on an n - -type region 703 formed by an epitaxial technique and having a low impurity concentration. An n + -type region 705 is formed in the p-type region 704 by impurity diffusion or ion implantation. The p-type region 704 and the n + -type region 705 respectively serve as the base and emitter of a bipolar transistor. An oxide film 706 is formed on the n - -type region 703, and a capacitor electrode 707 having a predetermined area is formed on the oxide film 706. The capacitor electrode 707 opposes the p-type region 704 through the oxide film 706 and controls a potential of the p-type region 704 floating upon application of a pulse voltage to the capacitor electrode 707. In addition, an emitter electrode 708 is connected to the n + -type region 705, an n + -type region 711 having a high impurity concentration is formed on the lower surface of the substrate 701, and a collector electrode 712 is formed to apply a potential to the collector of the bipolar transistor. The basic operation of the above arrangement will be described. Assume that the p-type region 704 serving as the base of the bipolar transistor is set at a negative potential. Light 713 is incident from the side of the transistor bearing the p-type region 704. Holes in the electron-hole pairs generated upon radiation are accumulated in the p-type region 704 and the potential at the p-type region 704 is increased by the accumulated holes in the positive direction (charge accumulation). Subsequently, a positive read voltage is applied to the capacitor electrode 707, and a read signal corresponding to a change in base potential during charge accumulation is output from the floating emitter electrode 708 (read operation). It should be noted that the amount of accumulated charge is barely reduced in the p-type region 704 serving as the base of the bipolar transistor, so that read access can be repeated. In order to remove the holes from the p-type region 704, the emitter electrode 708 is grounded, and a refresh pulse of a positive voltage is applied to the capacitor electrode 708. Upon application of the refresh pulse, the p-type region 704 is forward-biased with respect to the n + -type region 705, thereby removing the holes. When the refresh pulse falls, the p-type region 704 restores the initial state of the negative potential (refresh operation). Charge accumulation, read access, and refreshing are repeated as described above. The base accumulation type transistor is exemplifies as the photoelectric transducer element. However, a MOS or SIT image pickup device may be used .as the photoelectric transducer element. The present invention is not limited to any specific design of the photosensor. In the above embodiment, the drive noise and the photoelectric transducer signal are converted into a dot sequential signal, and clamping can be easily performed, thereby easily removing the drive noise.

Claims: Image pickup apparatus comprising: a plurality of amplifiers (A) in parallel with one another; and a plurality of photoelectric transducer elements (S) for converting incident light into photoelectric conversion signals, each said photoelectric transducer element being arranged so as to output its photoelectric conversion signal to a corresponding one of the said amplifiers, a plurality of switch means (SW) each for inputting a signal of a predetermined level to a corresponding one of the said amplifiers and for connecting the photoelectric conversion signal from one of the said photoelectric transducer elements to the corresponding one of the said amplifiers; control means arranged to obtain a first signal (E') from one of the said amplifiers in response to the said signal of a predetermined level and obtain a second signal (S') from the same one of the said amplifiers in response to the photoelectric conversion signal output from one of the photoelectric transducer elements after a photoelectric conversion operation; and processing means (1) for obtaining the difference between the first and second signals from the same amplifier. Apparatus according to claim 1 in which the switch means (SW) comprises switching transistor means (203) for coupling the signal of a predetermined level to the input of the amplifier. Apparatus according to claim 1 or claim 2 in which the switch means (SW) comprises switching transistor means (201,202) for coupling the photoelectric conversion signal from the photoelectric transducer element (S) to the input of the amplifier. Apparatus according to claim 3 in which the switching transistor means for coupling the photoelectric conversion signal from the photoelectric transducer element (S) to the input of the amplifier comprises: a capacitor (C1); a first switching transistor (201) for coupling the photoelectric transducer element (S) to the capacitor; and a second switching transistor (202) for coupling the capacitor to the input of the amplifier. Apparatus according to any one of claims 1 to 4 further comprising a common output line (101) for receiving both the first signals and the second signals from the plurality of amplifiers. Apparatus according to claim 5 in which the processing means comprises a clamp circuit arranged to receive the first and second signals from the common output line. Apparatus according to any one of claims 1 to 5 in which the processing means comprises a differential amplifier arranged to receive the first and second signals at respective inputs. Apparatus according to claim 7 comprising a first sample-and-hold circuit (12) for storing the said first signal (E') and a second sample-and-hold circuit (13) for storing the second signal (S'), arranged to supply the first and second signals in parallel from the respective sample-and-hold circuits to the respective inputs of the differential amplifier. Apparatus according to any one of the preceding claims in which each of the photoelectric transducer elements (S) is arranged to output its photoelectric conversion signal to a separate respective one of the said plurality of amplifiers. Apparatus according to any one of the preceding claims in which the control means is arranged to obtain the first signal (E') from one of the said amplifiers before obtaining the second signal (S') from the same one of the said amplifiers. Apparatus according to any one of claims 1 to 9 in which the control means is arranged to obtain the second signal (S') from one of the said amplifiers before obtaining the first signal (E') from the same one of the said amplifiers. Apparatus according to any one of the preceding claims further comprising: a signal processing circuit (602) for processing a signal from the processing means; and a control unit (604) for controlling the signal processing circuit and the control means.

Inventors: HARADA TADANORI, HASHIMOTO SEIJI, OHZU HAYAO, SUZUKI TSUENO, HARADA, TADANORI, HASHIMOTO, SEIJI, OHZU, HAYAO, SUZUKI, TSUNEO, SUZUKI, TSUENO
Applicants: CANON KK, CANON KABUSHIKI KAISHA
Application year: 1987
Main classification: H04N3
IPC codes: H04N3