HIGH TRANSCONDUCTANCE COMPLEMENTARY IC STRUCTURE

Abstract: In a complementary (Al, Ga)As/GaAs heterostructure in­ sulated gate field-effect transistor (HIGFET) both the n-chan­ nel and p-channel transistors utilize a two-dimensional elec­ tron (hole) gas in undoped high mobility channels to form planar, complementary GaAs-based integrated circuits.

Description: This invention is directed to high performance complementary integrated circuits and their fabrication. In particular the invention relates to n-channel and p-channel (Al,Ga)As H eterostructure I nsulated G ate F ield- E ffect T ransistors (HIGFETs) on a common planner wafer surface. According to the invention the heterostructure used for HIFGETs consists of an undoped GaAs buffer layer grown on a semi-insulating GaAs substrate followed by an undoped (Al,Ga)As gate layer comprising a variable composition of Ga Al As according to the formula Al x Ga 1-x As, when x is a number Between zero and one , x being one next to the GaAs layer. Both of these layers are epitaxially grown under conditions to make them as close to intrinsic and insulating as possible. Both the n- and p-channel HIGFETs utilize the high mobility, two-dimensional (2D) electron (hole) gas which is induced at the (Al,Ga)As-GaAs hetero-interface by the application of a suitable gate bias voltage. A self-aligned gate (SAG) process is used to form the source drain regions of the transistors with p⁺ implanted regions for p-channel and n⁺ implanted regions for n-channel HIGFETs. The electrons (holes) in the channel come from the source drain contacts when a suitable gate bias is applied. The use of undoped heterostructures allows both n- and p-channel transistors to be fabricated in the same epitaxial layers on the same wafer surface by a planar process. The absence of impurities also leads to high electron (hole) channel mobility resulting in FET operation in the saturation velocity regime for high transconductance transistors. Complementary GaAs based circuits which utilize both n- and p-channel transistors offer significant advantages over circuits utilizing only n-channel transistors in terms of noise margin and power dissipation and consequently circuit integration level. An Article by Katayama et al, "A New Two-Dimensional Electron Gas Field-Effect Transistor Fabricated on Undoped AlGaAs-GaAs Heterostructure", Jpn.J.Appl.Phys., Vol. 23, L150-2, March 84, shows an n-channel device which utilizes an undoped AlGaAs gate and is a 2D electron gas (2 DEG) field-effect transistor (FET). It is not a complementary device. From this article a semiconductor structure is known in which a first epitaxial layer of undoped GaAs and a second undoped Al GaAs layer are successively deposited on a S.I. GaAs substrate by a molecular beam epitaxy method. A metal gate is then deposited on the surface of the second epitaxial layer and n⁺ source and drain regions are formed by masked implantation of Si⁺ ions so as to just reach the AlGaAs-GaAs interface. Metal alloy AuGeNi based contacts to said source and drain regions are then formed. A 2D electron gas (2 DEG) FET having an n-type high mobility channel is provided, the 2 DEG density being controlled by the (positive) gate voltage. Solomon et al, "A GaAs Gate Heterojunction FET", IEEE Electron Device Letters, Vol. 5, No. 9, Sept. 84, p. 379-80, describe an n-channel heterostructure FET with an insulating gate but this also is not a complementary device. A different kind of complementary device is shown in an article by Kiehl et al, "Complementary p-MODFET and n-HB MESFET (Al,Ga)As Transistors", IEEE Electron Device Letters, Vol.EDL-5, No.12, Dec. '84, p521-23. A similar disclosure is shown in Kiehl et al, "Complementary p-MODFET and n-HB MESFET (Al,Ga)As FET's", IEDM '84, p854-55. Both of these publications describe a complementary device structure consisting of a conventional p-channel MODFET, made with a doped (Al,Ga)As gate and an n-channel MESFET. This is not a planar device and does not utilize a 2-dimensional electron (2DEG) and hole (2DHG) gas in an undoped high mobility channel for both the n- and p-channel devices. In the substantially different JFET technology, the fabrication of n-channel and p-channel GaAs-based devices on the same wafer has been disclosed, as for example by Zuleeg et al, "Double-Implanted GaAs Complementary JFET's", IEEE Electron Device Letters, Vol.EDL-5, No.1, Jan. 1984, p21-23. J-FET devices do not utilize 2-dimensional electron (hole) gases in undoped, high mobility channels. From an article of K. OE et al "A New Channel Al GaAs/ GaAs MiS-like Heterostructure FET Employing Two-Dimensional Hole Gas" published in "Japanese Journal of Applied Physics", Vol. 24, No. 5, May 1985, pages lines 335-337, a p-type channel device is known having an undoped AlGaAs layer on an undoped GaAs layer, whereas the source and drain regions are of the p⁺ type as a result of Be ions implantation using the gate metal (W Six) as a mask. A thin undoped GaAs layer is further provided on top of the AlGaAs layer for surface protection and good ohmic contact formation. AuZn based contacts are formed on the p-type sources and drains. A p-channel HFET employing a 2DHG on an undoped Al GaAs/GaAs heterostructure is thus provided. This article mentions that a similar n-channel HFET employing 2 DEG has already been reported (see above cited article of KATAYAMA), and a complementary circuit scheme could be promising in an integrated circuit technology consisting of 2 DEG and 2DHG HFETS of these types. However, K. Oe does not describe making a n-channel device using the WSi SAG process he used for his p-channel device. In a further article of J. Y. TANG et al "GaAs Gate Field-Effect Transistor Fabrication" published in "IBM Technical Disclosure Bulletin" Vol. 27, No. 9, February 1985, pages 5064-5066, a CMOS pair of HIGFETs is realised, where the gates are highly doped n⁺ and p⁺ GaAs, respectively. There is shown a buffer layer of undoped semi-insulating GaAs, a i-GaAlAs layer and a surface i-GaAs layer. Then a mask is added on top of the surface i-GaAs layer. An implant of silicon is made into the i-GaAs surface layer and an implant of Be or Mg is made to form n+ and p+ gate regions separately. Then the gate metals are put down on top of the n+ doped and p+ doped gate regions. Thus the resulting structure has deliberately doped the areas under the gate metal electrodes. In the present invention, however, there is no doping under the metal gate electrodes. The HIGFET approach takes maximum advantage of the heterostructure technology to create two-dimensional (2D) gases of both electrons and holes in a planar undoped multilayer (Al,Ga)As/GaAs structure. The 2D, electron (hole) gas is created at the (Al,Ga)As/GaAs heterointerface by applying a positive (negative) gate bias. The 2D electron (hole) gas has a high electron (hole) mobility because of the reduction of the impurity scattering. This allows FET operation in the velocity saturation regime at low voltages for high transconductance transistors. The SAG approach is essential for HIGFET devices since electrical contact must be made directly to the 2D high mobility electron and hole gases, which are present only under the gates. The planar structure of this invention is important to achieve the high processing yield required for VLSI circuits. The insulating gate approach for both the n- and p-channel devices allows a larger voltage swing on the input gates without leakage or shorting. The insulating gates also improve the threshold voltage uniformity and control since the threshold voltage is much less critically dependent on the thickness and doping of the gate layer than normal MODFET device structures. BRIEF DESCRIPTION OF THE DRAWINGS Figures 1a and 1b are schematics of the device cross section for a n-channel HIGFET and a p-channel HIGFET. Figure 2a shows the band structure at the point of establishing the 2D electron gas for the n-channel device of Figure 1a; Figure 2b shows the band structure at the point of establishing the 2D hole gas for the p-channel device of Figure 1b; and Figure 2c shows the band structure at zero bias of the normally off (non-conductive) enhancement type complementary devices. Figure 3 shows the cross section of the complementary HIGFET inverter. Figure 4 shows the processing steps for the complementary HIGFET fabrication. Figure 5 shows band structure of an alternate HIGFET device structure. Figure 6 is an electrical line schematic of the CMOS-like GaAs structure shown in Figure 3. Figure 7 is a graphical presentation of the transfer characteristics and transconductance of n-HIGFET at 77k. Figure 8 is a graphical presentation of the transfer characteristics and transconductances of p-HIGFET at 77k. DESCRIPTION The HIGFET device approach is illustrated in Figures 1 and 2. Figure 1 shows schematically a cross section view of n- and p-channel devices while Figure 2 shows schematically the energy band diagrams for the HIGFET devices starting at the gate electrode 15 and going perpendicular to the wafer surface. The HIGFET utilizes two epitaxial layers 12 and 13 grown on a semi-insulating GaAs wafer 11. The first layer 12 is pure, undoped GaAs, which is grown under conditions to make it as close to intrinsic as possible. The second layer 13 is a pure and undoped layer of (Al,Ga)As, which is again grown under conditions to make it as close to intrinsic as possible. The basic mechanisms which give rise to n-and p-channel HIGFETs are shown in Figure 2. Figure 2c shows the relative positions of the conduction and valence bands in the insulating GaAs layer, the insulating (Al,Ga)As layer and the position of the Fermi level of the metal gate electrode in a device without external electrical bias. The position of the Fermi level is shown to be midway between the conduction and valence bands of the GaAs and (Al,Ga)As layers for purposes of illustration and in practice the exact Fermi level position will depend on the amounts and types of residual impurities and defects in these undoped layers. Similarly, the gate metal Fermi level is shown midway between the conduction and valence bands of the (Al,Ga)As layer, but its actual position will depend on the work functions of the metal chosen and the position of the Fermi level at the surface of the (Al,Ga)As surface. In the unbiased state shown in Figure 2c, a conducting channel does not exist under the gate, i.e. both the n- and p-channel complementary HIGFETs are normally-off enhancement devices. The 2D high mobility electron (n-channel) gas or hole (p-channel) gas is created at the (Al,Ga)As/GaAs heterointerface by applying a positive (or a negative) gate voltage between the gate and the source contact, thereby providing in effect a current channel or trough between source and drain implanted regions which act as electron (or hole) reservoirs. The source and drain regions are heavily doped by ion implantation and have Fermi levels near the conduction (valence) band edges. Figures 2a and 2b show bands with applied gate voltages. In Figure 2a, a positive gate bias is applied and when E c crosses the Fermi level, E F , a 2D electron gas is induced. Likewise in Figure 2b a negative gate bias is applied and when E v crosses the Fermi level, E F , a 2D hole gas is induced. The electrons (or holes) are provided by the n⁺ type (or p⁺ type) implanted regions, and the electron (or hole) density is controlled by the gate voltage. To first order, the threshold voltages of these devices are determined by the gate barrier height  and the energy band discontinuities ΔE: V tn =  n - ΔE c, V tp =  p + ΔE v . The two-dimensional electron and hole gas densities, n s and p s , respectively, are determined to first order by the relations: n s = ε(V g - V tn )/q(d + Δd n ) p s = ε(-V g + V tp )/q(d + Δd p ) where d is the thickness of the (Al,Ga)As insulator, q is the electronic charge, and Δd is the width of the 2D gases. The threshold voltage can be minimized and the two-dimensional electron and hole gas densities can be maximized by making ΔE c and ΔE g as large as possible. The magnitude of ΔE c and ΔE v both increase with the fraction x of Al in the Al x Ga 1-x A s layer. Consequently, the device physics favors as large an Al composition as possible, commensurate with the technical problems associated with using AlAs or near AlAs composition materials in devices. Grading of the composition of the i-AlGaAs layer between the i-GaAs interface and the surface may be desirable to minimize the problems associated with high Al compositions. The structure and fabrication of our complementary n- and p-channel HIGFET will now be described. Referring to Figure 1a there is shown first an n-channel portion of a planar complementary HIGFET device. A semi-insulating GaAs substrate wafer 11 has grown thereon by molecular beam epitaxy (MBE) an insulating GaAs (i-GaAs) layer 12. Then an insulating aluminum gallium arsenide (i-(Al,Ga)As) layer 13 is grown by MBE. Alternately, MOCVD could be used to form these epitaxial layers. On the epitaxial surface is fabricated a gate such as a WSi gate 15. The regions 16 and 17 on either side of the gate extending to the ohmic contact regions, as delineated by the lines 18 and 19 are high dose ion implanted with a donor n⁺ species, such as Si, the gate 15 preventing any of the ion implant beneath itself and so providing the self-aligned gate structure. An implant anneal is made and then metallic contacts 21 and 22 are deposited on the surface. In a preferred embodiment the metallization is AuGeNi-based. A conventional alloy heat treatment forms these contacts to the heavily implanted region as shown by the dashed lines. Referring now to Figure 1b there is shown in the second place a p-channel portion 10' of a planar complementary HIGFET device. The p-channel portion of Figure 1b is the same substrate wafer 11 and is normally positioned adjacent the n-channel portion described above. The insulating layers 12 and 13 are the same layers identified as layers 12 and 13 of Figure 1a. A WSi gate 15' is the same as in Figure 1a. An acceptor p⁺ implant is made at regions 16' and 17' on either side of the metal silicide gate 15'. An implant anneal is made and then ohmic contacts 21' and 22' are deposited and alloyed to the high dose p-implanted region. In a preferred embodiment the metallization is AuZnAu-based. In Figure 3 a cross-section view of a planar complementary HIGFET inverter is shown using as far as possible the same identifying numerals as used in the individual sections Figure 1a and 1b. The n-channel device 10 and the p-channel device 10' are both formed on the common semi-insulating GaAs substrate 11. Specifically, the GaAs substrate 11 has grown thereon by MBE an insulating (undoped) GaAs layer 12 and then an insulating (undoped) (Al,Ga)As layer 13. In Figure 5 one example of an alternate fabrication which has been demonstrated shows a thin layer of i-AlAs between the i-GaAs and the i-(Al,Ga)As layers, where the i-AlAs layer is added to improve the insulating properties of the gate and to increase the valence and electron band energy discontinuities ΔE c and ΔE v , which increases the electron (hole) concentrations in the channels. In other embodiments, the composition profile of the gate can be graded or include various composition sublayers to optimize the device performance. Referring to Figure 4, a flow chart of the planar self-aligned gate by ion implantation n-channel and p-channel HIGFET IC process for completing the complementary IC of Figure 3 is illustrated. The first step listed is the MBE heterostructure growth of the i-GaAs layer 12 and the i-(Al,Ga)As layer 13. Growth conditions are adjusted to obtain as close to intrinsic semiconductor material as possible with very low total doping. Then on the epitaxial surface 13a a high temperature stability refractory metal or metal silicide such as WSi x is deposited to form the gates 15 and 15'. A double masking of the surface allows sequential n⁺ and p⁺ selective ion implants. The source and drain regions 16 and 17 on either side of the gate 15 extending to the ohmic contact regions, as delineated by lines 18 and 19, are ion implanted with an n-implant while the regions around gate 15' are covered. Then the regions 16' and 17' on either side of the gate 15' are ion implanted with a p⁺ implant while the regions of gate 15 are covered. In one embodiment Si was used to create the n+ implanted regions and Mg or Be have each been used to form the p⁺ implanted regions. These two ion implants provide the self-aligned gates, the gates 15 and 15' preventing any of the ion implant beneath itself and so providing the self-aligned gate structure. A high temperature implant anneal process is the next step to activate the ion implanted n and p species. This implant anneal can be in a conventional semiconductor anneal furnace, or rapid thermal annealing using an optical lamp can also be used. Dielectric anneal encapsulants, such as Si₃N₄ or an As-overpressure can be used to optimize the anneal activation. Alternate processes for forming self-aligned gate structures which utilize SiO₂ and photoresist to mask the gate region during ion implantation and deposit the actual metal gate after implant anneal can also be used. The metallic drain and source electrodes 21, 22, 21' and 22' are deposited and delineated using standard photolithographic liftoff techniques. In one preferred embodiment this ohmic contact is AuGeNi-based for the n-channel HIGFET 10 and AuZnAu-based for the p-channel HIGFET 10'. Then a conventional alloy heat treatment is used so that ohmic contacts are formed to the heavily implanted regions as shown by the dashed lines of Figures 1a and 1b. The individual complementary devices such as 10 and 10' of Figure 3 are electrically isolated one from the other by ion implantation of a neutral species, such as protons, which destroys any residual electrical conduction between the devices. A photoresist is used to protect the active devices during the isolation ion implant. The n-channel and p-channel HIGFET devices can then be connected to form standard complementary logic gates using a standard metal interconnect system as is shown in Figure 3 to form gates such as the simple inverter shown schematically in Figure 6. Both n-channel and p-channel HIGFET devices have been fabricated and tested at both room temperature and 77K. As shown in Figure 5, two different (Al,GA)As/GaAs heterostructures have been grown for device fabrication. The first employs a homogeneous undoped Al 0.3 Ga 0.7 layer as the gate insulator. The second incorporates an undoped AlAs layer next to the GaAs in an attempt to increase the conduction and valence band discontinuities, ΔE c and ΔE v respectively. For a nominal lµm gate length n-channel HIGFET, the extrinsic transconductance g m is 218 mS/mm at room temperature and 385 mS/mm at 77K. Figure 7 shows a plot of both the square-root of I ds and g m versus the gate-to-source voltage V gs for an n-channel device. For a nominal lµm gate length p-channel HIGFET the values of the extrinsic transconductance g m are 28.3 mS/mm at room temperature and 59.3 mS/mm at 77K, respectively. Figure 8 shows a plot of both the square root of I ds and g m versus the gate-to-source voltage V gs for a p-channel device. The specification has shown a complementary device based on (Al,Ga)As/GaAs material system, however the invention can clearly be applied to other semiconductor material systems such as (Al,In)As/(Ga,In)As, in which the gate material is a larger gap insulating semiconductor and the active channel material is a high mobility semiconductor.

Claims: A complementary, planar IC structure, comprising: a) a semi-insulating compound semiconductor substrate (11) having a flat major surface; b) a first epitaxially grown layer (12) of an undoped insulating GaAs semiconductor (12) over said surface, said first layer having high mobility and having a first bandgap; c) a second undoped epitaxially grown layer (13) of a second insulating III-V-compound semiconductor (13) comprising a variable composition of GaAlAs according to the formula Al x Ga 1-x As, where x is a number between zero and one, x being one next to the GaAs layer, which second layer has a larger bandgap than said first bandgap, said second layer having a planar surface (13a); d) first and second metal gate electrodes (15,15') deposited directly on said planar surface (13a) of said second epitaxial layer; e) a n⁺ source (16) and a n⁺ drain (17) region defined by selective donor ion implantation in said epitaxial grown layer structure next to said first gate electrode (15); f) a p⁺ source (16') and a p⁺ drain (17') region defined by selective acceptor ion implantation in said epitaxial grown layer structure next to said second gate electrode (15'); g) first and second n-ohmic contacts (22,21) directly on said second layer surface (13a) and alloyed to said n-source and n-drain regions, respectively; and, h) third and fourth p-ohmic contacts (22',21') directly on said second layer surface (13a) and alloyed to said p-source and p-drain regions, respectively; whereat i) both the n-channel and p-channel transistors utilize a 2D electron (hole) gas in an undoped high mobility channel to form CMOS-like IC's. The structure according to claim 1, characterized in that the compound semiconductor substrate is of semi-insulating GaAs. The structure of claim 1 or 2, characterized by complementary self-aligned gate (Al,Ga)As/GaAs heterostructurs with an insulating (Al,Ga)As (SAG) gate structure to form CMOS-like GaAs IC's. The structure according to one of the preceding claims, characterized by said planar epitaxial grown insulating layers include at least a i-GaAs layer (12) and a i-Al x Ga 1-x As layer (13). The structure according to one of the preceding claims, characterized in that said metal gate electrodes are WSi. The structure according to one of the claims 1 to 5, characterized in that said selective donor ion implantation is of silicon ions. The structure according to one of the claims 1 to 5, characterized in that said selective acceptor ion implantation is of Mg or Be ions. The structure according to one of the preceding claims, characterized in that said n-ohmic contacts are AuGeNi-based. The structure according to one of the preceding claims, characterized in that said p-ohmic contacts are AuZn-based. A method of fabricating a complementary planar IC heterostructure according to claim 1, comprising the steps of: a) growing epitaxially over a GaAs substrate a plurality of insulating epitaxial layers including a layer of insulating gallium arsenide (i-GaAs) and a layer of variable composition insulating aluminum gallium arsenide i-(Al,Ga)As to form insulating layers, said i- (Al,Ga)As layer Being an AlAs layer next to the GaAs layer; b) forming first and second metal gates on the planar surface of the insulating layers; c) implanting a high dose of n-type impurities in the regions of and on either side of the first gate to form the source and drain with a self-aligned gate structure; d) implanting a high dose of p-type impurities in the regions of and on either side of the second gate to form the source and drain with a self-aligned gate structure; e) annealing with a high temperature anneal to activate the ion implanted n and p species; f) depositing metallic ohmic contacts for source and drain contacts at each of said ion implanted regions, and alloying said contacts so they are formed to the heavily implanted regions; g) providing an isolation implantation between the complementary devices. The method according to claim 10, characterized in that the step of forming of the metal gate electrodes comprises depositing a temporary gate structure which functions as a mask during the self-aligned gate process, followed by the formation of the metal gate after the implant anneal. The method according to claim 10 or 11, characterized in that the insulating epitaxial layers are grown by molecular beam epitaxy (MBE).

Inventors: ABROKWAH, JOHNATHAN K., CIRILLO, NICHOLAS C., JR., SHUR, MICHAEL S., TUFTE, OBERT N.
Applicants: HONEYWELL INC.
Application year: 1986
Main classification: H01L27
IPC codes: H01L27, H01L21, H01L29