SEMICONDUCTOR MEMORY DEVICE

Abstract: A complementary semiconductor memory device com­ prises a memory cell array (73; 100) in which each cell (MC p ; MCpo) has a first MIS transistor (Q p ; Q p1 , Q p2 ) of a first con­ duction type connected to a word line, a decoding circuit (71) for decoding an input address signal and generating a selecting signal, and a driving circuit (72; 90) having a second MIS tran­ sistor (Q₈₀) of a second conduction type opposite to the first conduction type for driving the word line, thereby improving the operation speed thereof, while decreasing the possibility of the destruction of information in each cell by α-rays.

Description: SEMICONDUCTOR MEMORY DEVICE The present invention relates to a semiconductor memory device and, more but not necessarily exclusively, particularly 1/ to a semiconductor memory device having a circuit for driving a word line connected to a MOS (metal oxide semiconductor) transistor, or more broadly, MIS (metal insulator semiconductor) transistor, used as an access gate in each of a plurality of memory cells. In a conventional semiconductor memory device, both a MOS transistor used as an access gate in a cell (hereinafter referred to as an access gate MOS transistor) and a MOS transistor for driving a word line connected to the access gate MOS transistor, (hereinafter referred to as a word line driver MOS transistor), are usually of the same conduction type. In general, an N-channel type MOS transistor can operate at a high speed because it has a relatively high carrier mobility compared with a P-channel type MOS transistor, and a semiconductor memory cell or device using such an N-channel type MOS transistor can be miniaturized because of a high mutual conductance (gm). Therefore, in many cases, N-channel type MOS transistors are employed for both the access gate MOS transistor and the word line driver MOS transistor. However, in a semiconductor memory device where memory cells using N-channel type MOS transistors are miniaturized with a higher degree of integration, there is a problem in that a soft error easily occurs due to the irradiation of a-rays, which are radiated from radioactive substances of uranium (U), thorium (Th) or the like contained in a package or semiconductor materials, resulting in the destruction of a content of the memory cell. The above-mentioned problem will be explained later in more detail. On the other hand, a memory cell using a P-channel MOS transistor has an advantage in that a soft error due to a-rays does not occur so easily as in a memory cell using an N-channel MOS transistor. Therefore, in order to decrease the possibility of the destruction of the information stored in the memory cell, some semiconductor memory devices employ P-channel MOS transistors for the access gate MOS transistor. However, a device using P-channel MOS transistors has a disadvantage in that it cannot operate at as high a speed as the device using N-channel MOS transistors, because the mutual conductance (gm) of a P-channel MOS transistor is lower than that of an N-channel MOS transistor. Assuming that the size of a P-channel MOS transistor used as the word line driver is increased to increase the driving ability, in other words, to improve the operation speed, another problem arises in that the device using P-channel MOS transistors cannot be miniaturized to the same extent. An embodiment of the present invention may provide a complementary semiconductor memory device having a relatively simple constitution, which enables a word line connected to a MOS transistor used as an access gate in each memory cell to be driven at a high speed, and the possibility of the destruction of the information stored in each memory cell to be greatly decreased. According to the present invention there is provided a complementary semiconductor memory device comprising: a memory cell array, each cell having a first MIS constituing or transfer transistor of a first conduction type,/ an access/gate, a respective one or connected to a / a plurality of word lines; a decoding circuit for decoding an address signal input and, based on a result of the decoding, generating a selecting signal; and a driving circuit having a second MIS transistor of a second conduction type opposite to the first conduction type for selecting a specific word line among the plurality of word lines in response to the selecting signal. Reference is made, by way of example, to the accompanying drawings in which: Figure 1 is a circuit diagram illustrating a semiconductor memory device in which both an access gate MOS transistor and a word line driver MOS transistor are N-channel type; Fig. 2 is a waveform diagram illustrating the operation of the device shown in Fig. 1; Fig. 3 is a sectional view of the cell shown in Fig. 1, for explaining the influences on the cell from the impingement of a-rays; Fig. 4 is a circuit diagram illustrating a semiconductor memory device in which both an access gate MOS transistor and a word line driver MOS transistor are P-channel type; Fig. 5 is a waveform diagram illustrating the operation of the device shown in Fig. 4; Fig. 6 is a sectional view of the cell shown in Fig. 4, for explaining the influences on the cell by the irradiation of a-rays; ; Fig. 7 is a circuit diagram illustrating a complementary semiconductor memory device as an embodiment of the present invention; Fig. 8 is a waveform diagram illustrating the operation of the device shown in Fig. 7; Fig. 9 is a circuit diagram illustrating part of a modification of the device shown in Fig. 7; and Fig. 10 is a circuit diagram illustrating part of another modification of the device shown in Fig. 7. For a better understanding of the preferred embodi ments, the problems in the related art will now be explained with reference to Figs. 1 to 6. Figure 1 shows a DRAM (dynamic random access memory) device using N-channel MOS transistors. Referring to Fig. 1, reference numeral 11 denotes a decoder, which comprises a NOR gate consisting of four N-channel type MOS transistors Q10 t Qll t Q12 and Q13 In the decoder 11, the MOS transistor Q10 is connected between a higher voltage Vcc , for example, 5 V, and a node N1, and the gate thereof receives a clock signal #p for precharging a line of p the node Nl. The MOS transistors Qll , Q12 t and Q13 are, respectively, connected between the node Nl and a lower voltage Vss , for example, 0 V, and the gates thereof receive an address signal having a plurality of bits (in the present example, three bits); namely the gates thereof receive address bits A. A. , and Ak , respectively. Reference numeral 12 denotes a driver, which comprises a predetermined number of N-channel MOS transistors, one of which is representatively denoted by a reference symbol Q14 t and a corresponding number of N-channel MOS transistors, one of which is representatively denoted by a reference symbol Q15 In the driver 12, the sources of the MOS transistors Q14 are commonly connected to the node N1, and the drains thereof are connected to the gates of the MOS transistors Q15 respectively. To the gates of the MOS transistors Q14 t a predetermined reference voltage VR is applied. The drains of the MOS transistors Q15 are connected to word lines WLO to Wien respectively, and the sources thereof receive clock signals WD to WDn , respectively, which are generated based on a predecoding of an address signal in a predecoder (not shown) and for selecting a specific word line among the group of word lines Wilo to WLn selected by the NOR gate (Q10 o Qll t Q12 and Q13). The MOS transistor Q15 in response to the signal applied to the gate thereof, i.e., the signal at a node N2, transmits the clock signal WDo to the word line WLO , and drives the word line WL . At this time, the potential at the 0 node N2 is boosted by the clock signal WDo to a potential exceeding the voltage Vcc t because the MOS transistor Q14 is in a cut-off state. The MOS transistor Q14 is hereinafter referred to as a cut gate MOS transistor. Reference numeral 13 denotes a memory cell array consisting of a plurality of dynamic memory cells, one of which is representatively denoted by reference symbol MCn. The dynamic memory cell MCn is constituted by an N-channel MOS transistor 0n access gate and a capacitor C indicating the equivalent (for or the cely.'for storing charges) capacitance of the cell. The gate, source, and drain of the MOS transistor 0n are connected to the word line Wto , the capacitor Cn , and a bit line BL for writing or reading data, respectively. Figure 2 illustrates waveforms for explaining the operation of the device shown in Fig. 1, where the word line Wto is selected. The operation of the device will be hereinafter described with reference to Figs. 1 and 2. First, the clock signal #p is at a higher level, p i.e., the level of Vcc , and turns ON the MOS transistor Q10 ,resulting in a charge-up state at the Then, the clock singal #p falls to OV and p turns OFF the transistor Q10 , and then, the address signal is input. If all of the address bits A. A. , and Ak are at the low level, all of the MOS 3 transistors t , Q12 , and Q13 are in the OFF state, so that the potential at the node N1 is maintained at the high level. However, if any one of the address bits is at a high level, the corresponding transistor turns ON, so that the charges remaining at the node NI are discharged through the ON state transistor and the potential at the node N1 falls to 0 V. This discharging state is showo by a broken line N1' in Fig. 2. When the potential at the node N1 is maintained at the high level, as shown by a solid line in Fig. 2, the memory cell MCn is brought to a selecting state. The MOS transistor Q14 , which is in the OFF state with the gate thereof supplied with the appropriate reference voltage VR, exerts the "bootstrap" effect of the transistor Q15 more effectively. When the clock signal WDo for activating the predecoded word line rises in level, the potential at the word line WLO increases according to the rise of the clock signal WDo At this time, the potential at the node N2 increases due to the bootstrap effect. As a result, the bootstrap effect operation is effective and the potential at the node N2 is boosted to the potential exceeding the voltage Vcc t so that the potential at the word line Wilo is boosted to the potential exceeding the voltage Vcc according to the rise of the clock signal WDo When the potential at the word line Wilo rises, the access gate MOS transistor 0n turns ON, resulting in the charging from or discharging to the bit line BL of the capacitor Cn For example, assuming that the data "1" is stored in the capacitor Cn 1 that is to say, the capacitor Cn is charged to the voltage Vcc V the potential at the bit line BL precharged to the voltage of Vcc/2 is raised by the charges of the capacitor Cn , resulting in the generation of a potential difference between the bit line BL and the other bit line BL (not shown). This potential difference is amplified by a sense amplifier (not shown), so that the potential of the low level side is quickly pulled down to the lower voltage Vss t i.e., O V, and the potential of the high level side is quickly pulled up to the higher voltage Vcc t i.e., 5 V. The device constituted as shown in Fig. 1 is widely used since it employs the N-channel MOS transistor Q15 t whose mutual conductance gm and driving ability are great, as a word line driver MOS transistor, and accordingly, it can realize a high speed operation by causing the change of the potential at the word line WLo to quickly follow the change of the clock signal wDo However, the device shown in Fig. 1 offers a problem. For example, assuming that high level data is written into the capacitor Cn , the potential at the word line WLo. must be boosted to the potential exceeding the voltage of Vcc plus Vth , where Vth is a threshold voltage of the transistor Qn. In this case, the potential at the node N2 rises to the voltage of 2 Vcc to 2.5 V due to the bootstrap effect, with the result that the problems of a break-down voltage in the P-N junction of the transistor Q14 t a bad influence by hot electrons occurring in the P-N junction, a fall in the reliability or the like. Also, the device shown in Fig. 1 causes another problem, which will be hereinafter described. Figure 3 is a sectional view of the memory cell MCn shown in Fig. 1, for explaining the influences on the memory cell from the impingement of ri-rays. Referring to Fig. 3, reference numeral 31 denotes a P-type semiconductor substrate, on which N -type regions constituting a drain 32 and a source 33 of the transistor 0n are formed. Reference numeral 34 denotes a gate formed above the channel between the N+-type regions via an insulation layer 35 made of silicon oxide film. The drain 32 is connected to the bit line BL, and the gate 34 is connected to the word line WLo Reference numeral 36 denotes an N-type inversion layer formed on the substrate 31, which constitutes a MOS type capacitor C . Reference numeral 37 denotes an electrode used for forming the N-type inversion layer 36, which is formed above the substrate 31 via the insulation layer 35. Reference numeral 38 denotes a depletion layer extending from the surface of the substrate to the depth within the substrate. In the dynamic memory cell MCn shown in Fig. 3, when a-rays impinge on the substrate 31, a plurality of pairs of an election @ and a hole @ are produced. Since the electric field E is directed to the direction shown by an arrow mark within the depletion layer 38, electrons @ among the pairs of an electron and a hole are accelerated by the field E and enter into the source region 33. The electrons 8 have a high mobility, and accordingly, even if the electrons are those produced in the bottom part of the substrate 31, they are first bound for the depletion layer 38 by diffusion, then accelerated by the field E, and enter the source region 33. The entry of the electrons into the source region causes the potential of the source region to change, resulting in a change in the amount of charges in the capacitor Cn For example, even if the information n 1 is written into the capacitor Cn by charging the N+-type region 33 to 5 V, the potential in the N+-type region 33 / towered to 2 V or 1 V by the injection of electrons ¯, so that the above case becomes equivalent to that wherein the information "0" is written into the capacitor Cn. This means that the information stored in the memory cell may be or is inverted. Figure 4 shows another DRAM device, where both an access gate MOS transistor and a word line driver MOS transistor are P-channel type. Referring to Fig. 4, reference numeral 41 denotes a decoder, which comprises a NAND gate consisting of a P-channel type MOS transistor Q40 and three N-channel MOS transistors Q41 Q42 t and Q43 , a P-channel type MOS transistor Q44 and two inverters I41 and 142. In the decoder 41, the MOS transistor Q40 is connected between a higher voltage Vcc c for example, 5 V, and a node N3, and the gate thereof receives a clock signal Xp for precharging a line of the node N3. The MOS transistors Q41 Q42 t and Q43 are connected in series between the node N3 and a lower voltage V t for example , 0 V, ss and the gates thereof receive an address signal having a plurality of bits (in the present example, three bits), that is, the gates thereof receive address bits A. A. and d -,respectively. The MOS transistor Ak 044 is connected between the higher voltage Vcc and the node N3, and the gate thereof is connected to a joint between the inverters 141 and I42 connected in series between the node N3 and a node N4. The MOS transistor Q44 functions to keep the voltage level at the node N3 at the high level of Vcc even if the MOS transistor Q40 is turned OFF by the clock signal of a high level. Reference numeral 42 denotes a driver, which has the same constitution as the driver 12 shown in Fig. 1, but employs P-channel MOS transistors Q45 and Q46 in place of the N-channel MOS transistors Q14 and Q15 Similarly, reference numeral 43 denotes a memory cell array which has the same constitution as the memory cell array 13 shown in Fig. 1, but employs dynamic memory cells MCp consisting of a P-channel MOS transistor 0p and a capacitor Cp in place of the N-channel MOS transistor Qn and the capacitor Cn. Figure 5 illustrates waveforms for explaining the operation of the device shown in Fig. 1, where the word line WLo is selected. The operation of the device will be hereinafter-described with reference to Figs. 4 and 5. First, the clock signal Xp is at a lower level, p i.e., 0 V, and turns ON the MOS transistor Q40 resulting in a charge-up state at the node N3. This charge-up state is maintained by the ON state of the MOS transistor Q44 because the gate thereof receives a low level voltage via the inverter # 41 Then the clock signal Xp rises to a higher level, i.e., Vcc ' and p turns OFF the MOS transistor Q40 , and then, the address signal is input. If all of the address bits A. , A. , and Ak are at the high level, all of the 1 3 MOS transistors Q41 , Q42 and Q43 turn ON and the charges remaining at the node N3 are discharged through these transistors, so that the potential at the node N3 falls to 0 V, i.e., VSs. However, if any one of these bits is at the low level, the corresponding transistor turns OFF, so that the potential at the node N3 is maintained at a high level. The waveform in this case is shown by a broken line N3' in Fig. 5. When the potential at the node N3 is brought to the low level, the memory cell MCp is brought to a selecting state. At this time, the potential at the node N4 also falls to the lower voltage via the inverters I41 and I42 t and furthermore, the potential at the node N5 begins to fall via the ON transistor 045. However, since the transistor Q45 is P-channel, the change in the potential at the node N5 is slow, so that the potential at the node N5 does not completely fall to o V. For example, assuming that the threshold voltage of the P-channel MOS transistor 045 is 1 V, the potential at the node N5 falls to about 1 V and stays there. When the potential at the node N5 falls to a level at which the word line driver MOS transistor Q46 turns ON, the clock signal WDo is applied to the source of the transistor Q46 t so that the potential of the word line Wilo follows the change in the level of the clock signal WDo As is shown in Fig. 5, the word line Wilo is boosted to the negative voltage, resulting in a complete ON state of the MOS transistor Qp in the memory cell. At this time, the potential at the node N5 is boosted by the clock signal WDO to the negative voltage, because the MOS transistor Q45 is in a cut-off state. In the device constituted as shown in Fig. 4, however, a problem arises as explained below. Since the cut gate MOS transistor Q45 and the word line driver MOS transistor Q46 are P-channel type having a relatively small mutual conductance gm, the operation speed is relatively low. Also, since the output Of the decoder 41 appearing at the node N3 is transmitted to the driver 42 via two inverters 141 and I42 t the operation speed becomes even more low. Assuming that the size of the P-channel MOS transistor 046 is increased to increase the driving ability, that is, to improve the operation speed, the time of the transmission of the clock signal WD to the word line WLo is reduced. On the other hand, the load at the node N5 increases, so that the time of the transmission of the potential at the node N5 to the node N4 is extended. To prevent this, the size of the MOS transistor Q45 must be increased, and this can not lead to a fundamental improvement of the operation speed. Figure 6 is a sectional view of the memory cell MC shown in Fig. 4, for explaining the influences on p the memory cell from the impingement of a-rays. Referringato Fig. 6, reference numeral 61 denotes a P-type semiconductor substrate, on which an N-type region constituting a well 62 is formed. On the N-type well 62, P -type regions constituting a drain 63 and a source 64 of the transistor Qp are formed. Reference numerals 65, 66, 67, 68 and 69 are a gate, an insulation layer, a P-type inversion layer, an electrode and a depletion layer, respectively. The relation of connection between the constituent elements in Fig. 6 is the same as that in Fig. 3, except that a P-channel MOS an transistor is employed in place of / N-channel MOS transistor as a transistor constituting the memory cell. In the dynamic memory cell MC shown in Fig. 6, p holes 0 among the pairs of an electron and a hole produced due to the impingement of a-rays on the substrate 61 enter the source region 64, resulting in a change in the amount of charges in the capacitor Cp. This change leads to the possibility of the destruction of the information in the cell. However, the possibility of the destruction of the information in the memory cell using P-channel MOS transistors is less than that in the memory cell using N-channel MOS transistors, because in the N-type memory cell as shown in Fig. 3, electrons @ easily enter the source region 33 due to their high mobility, while in the P-type memory cell as shown in Fig. 6, few holes @ enter the source region 64 due to their low mobility. Therefore, considering the possibilities of the occurrence of soft errors due to the impingement of a-rays, the device using P-channel type cell is more preferable than the device using N-channel type cell. A preferred embodiment of the present invention will be described hereinafter in detail with reference to Figs. 7 and 8. In Fig. 7, which illustrates a circuit diagram of a complementary semiconductor memory device as an embodiment of the present invention, reference numeral 71 denotes decoding circuit comprising a decoder 71A and a predecoder 71B. In the decoder 71A, a MOS transistor Q70 is connected between a higher voltage V , for. example, 5V, and a node N3, and the gate thereof receives a clock signal jp for precharging a line of the node N3. MOS transistors 071 t Q72 t and Q73 are connected in series between the node N3 and a lower voltage Vss for example, 0 V, and the gates thereof receive pre determined address bits A. , A. , and Ak respectively, i 3 Ak which are part of a plurality of bits constituting an address signal. That is, MOS transistors Q70 t Q71 072. t and Q73 constitute a NAND gate. A MOS transistor Q74 is connected between the higher voltage Vcc and the node N3, and the gate thereof is connected to the output of an inverter 171 whose input is connected to the node N3. The MOS transistor Q74 functions to keep the potential at the node N3 at the high level even if the MOS transistor Q70 is turned OFF by the clock signal #p of a high level. The p output point of the inverter 171 is hereinafter referred to as a node N6. On the other hand, in the predecoder 71B, reference symbol NA denotes a NAND gate, to which the address bits Al and Am, which are the rest of the aforementioned address bits, are input. The output of the NAND gate NA is connected via an inverter 172 to a CMOS inverter circuit CI1. The source of the MOS transistor Q75 in the CMOS Inverter circuit CI1 is connected to the higher voltage, i.e., Vcc The input point of the CMOS inverter circuit CI1 is hereinafter referred to as a node N10. Reference symbol CI2 denotes another CMOS inverter circuit consisting of a P-channel MOS -transistor Q+7 and an N-channel MOS transistor 078. To the respective gate of the CMOS inverter circuit CI, a clock signal dWD for controlling the timing of the generation of a clock signal WDo to be generated based on a predecoding of address bits Al and Am is input. This clock XWD is also input to an inverter 173. The source of the MOS transistor 077 is connected to the higher voltage, i.e., Vcc t and the source of the MOS transistor Q78 is connected to the drain of an N-channel type MOS transistor Q79. The source of this MOS transistor Q79 is connected to the lower voltage i.e., V55 , and the gate thereof is connected to the output of the CMOS inverter circuit Cl2 , that is, the respective drain of the MOS transistors Q77 and 078. The output point of the CMOS inverter circuit CI, is hereinafter referred to as a node N9. The output of the inverter I73 is connected via a capacitor CO to the drain of the MOS transistor 079. The output point of the inverter 173 is hereinafter referred to as a node N7. The drain of the MOS transistor Q79 is connected to the source of the MOS transistor Q76 constituting the CMOS inverter circuit CI1. The output point of this MOS transistor Q79 is hereinafter referred to as a node N8. Reference numeral 72 denotes a driving circuit, which comprises a predetermined number of N-channel type MOS transistors, one of which is representatively denoted by reference symbol 080. The gates of the MOS transistors Q80 are commonly connected to the node N6, and the drains thereof are connected to word lines Wto to won , respectively. Also, the sources thereof receive clock signals WDo to WDn , respectively, which are generated by the predecoder 71B and are for selecting a specific word line among the group of word lines Wto to Wien selected by the NAND gate (Q70 t Q71 f Q72 and Q73). The MOS transistor Q80 , in response to the signal applied to the gate thereof, transmits the clock signal WD to the word line Wto , and drives the word line WLo Reference numeral 73 denotes a memory cell array consisting of- a plurality of dynamic type memory cells, one of which is representatively denoted by reference symbol MC . The memory cell MC is constituted by a P P-channel MOS transistor QD / an access gate and a (for storing charges indicating the equivalent capacitance of The cel The gate, source, and drain of the tran- sistor Qp are connected to the word line Wilo , the capacitor C , and a bit line Bt for writing or reading data, respectively. Figure 8 illustrates waveforms for explaining the operation of the device shown in Fig. 7, where the word line Wilo is selected. The operation of the device will be hereinafter described with reference to Figs. 7 and 8. First, the clock signal #p is at a lower level, p i.e., 0 V, and turns ON the MOS transistor Q70 , resulting in a charge-up state at the node N3. This charge-up state at the node N3 is maintained by the ON state of the MOS transistor Q74 because the gate thereof receives a low level voltage via the inverter 171. At this time, the potential at the node N10 is at a lower level, i.e., 0 V, so that the MOS transistor Q75 is in the ON state, resulting in a high level state of the clock signal WD . Since the potential 0 at the node N6 is at the low level, the N-channel type MOS transistor Q80 is maintained in the OFF state, resulting in a non-selection state of the word line WLo Then, the clock singal Xp rises to a higher p level, i.e., Vcc t and turns OFF the MOS transistor Q70 and then, the address signal is input. If all of the address bits A. , A. , and Ak are at the high level, all i 3 of the MOS transistors Q71 I Q72 ' and 73 turns ON and the charges remaining at the node N3 are discharged through these transistors, so that the potential at the node N3 falls to 0 V, and the potential at the node N6 rises to a higher level. In this case, the potential at the node N6 quickly rises to the higher level because the word line driver MOS transistor Q80 is an N-channel and can be provided in a smaller size than the word line driver MOS transistor Q46 of P-channel shown in Fig. 4. On the other hand, when the level of the clock signal XWD rises to the higher level at a predetermined timing, the potential at the node N9 begins to change from the higher level to the lower level and the potential at the node N7 also falls to the lower level. At this time, the potential at the node N8 is lowered to the negative potential by the operation of the capacitor CO , and the potential at the node N9 is clamped to the negative potential due to the ON state of the MOS transistor 078. That is, the potential at the node N8 is boosted to the negative voltage, and this state is maintained because the MOS transistor Q79 never turns ON, due to the equality of levels at the nodes N9 and N8. This negative voltage at the node N8 is applied to the source of the N-channel type MOS transistor 076. On the other hand, when high level signals are input to the NAND gate NA as address bits Al and Am, the potential at the node N10 rises to the higher level, resulting in the ON state of the MOS transistor Q76. Therefore, the potential of the clock signal WTO begins to fall from the higher level V to the negative potential, cc and then stays at the negative potential. This clock signal WDV of the negative potential is applied to the source of the word line driver MOS transistor 080. Since the potential at the node N6 is now at the higher level, the MOS transistor Q80 turns ON, so that the potential at the word line Wilo quickly falls according to the change in the clock signal WDo Then, the potential at the word line Wiso stays at the same negative potential as the clock signal WD resulting in a selection state of the memory cell MCp. When the potential at the word line WLo is at the negative level, the access gate MOS transistor Qp turns ON, resulting in a charging from or discharging to the bit line BL of the capacitor Cp. After this, the operation in the memory cell is made similarly with the case of the N-channel type cell. According to the constitution of the device shown in Fig. 7, the operation of transmitting a signal between the word line Wilo and the line of the clock signal WDo can be quickly made because an N-channel MOS transistor Q80 is employed as a word line driver. Also, the MOS transistor Q80 is sufficiently maintained in the ON state since the source thereof receives the clock signal WD having a negative voltage when the gate thereof receives a higher level voltage. Therefore, the device shown in Fig. 7 does not need a cut gate MOS transistor for causing a bootstrap effect, for example, as shown in Fig. 1 as the reference symbol Q14 This means that the device shown in Fig. 7 can realize a simpler constitution of circuits. Since the P-channel MOS transistor Qp is employed as an access gate in the memory cell, the possibilities of the occurrence of soft errors due to the impingement of a-rays on the memory cell are decreased compared with the case of a device using N-channel MOS transistors. Additionally, in order to ensure the reliable operation of the device shown in Fig. 7, the following points should be fully considered. The potential at the node N6 of the non-selected decoder is at the low level when the signal XWD is applied. Accordingly, the MOS transistor Q80 should be in the OFF state. However, when the level of the clock signal WDV falls to a level below the ground level in the non-selection state, the MOS transistor Q80 turns ON, resulting in a fall of the potential at the word line Wtn Accordingly, access gate MOS transistors connected to the word line WLn turn ON, resulting in the multi-selection state. One method for avoiding this state is to set the absolute value of the threshold voltage of the MOS transistor Q80 to be greater than that of the MOS transistor Qp , and to p select the value of a negative potential of the clock signal WDo so that the transistor Qp can turn ON, but the transistor Q80 cannot turn ON. Another method is to set the lower potential at the node N6 to be negative by the inverter 171 so that the transistor Q80 cannot turn ON even if the level of the clock signal WD falls to a level below the ground level in the nonselection state. The former method is preferable because the constitution of circuits is simple. Figure 9 illustrates a modification of the driving circuit shown in Fig. 7. Referring to Fig. 9, the driving circuit 90 comprises a predetermined number of N-channel MOS transistors, one of which is representatively denoted by reference symbol Q80 t and the corresponding number of P-channel MOS transistors, one of which is representatively denoted by reference symbol Q90. A pair of MOS transistors Q80 and Q90 constitute a CMOS inverter circuit, whose input and output are connected to the node N6 and the word line Wilo , respectively. Also, the source of the MOS transistor Q90 is connected to the higher voltage Vcc and the source of the MOS transistor Q80 receives the clock singal WDo. Referring to Figs. 7 and 9, when the memory cell is not selected, the potential at the word line WLn should be at the high level. However, when the level of the clock signal WDn falls to a level below the ground, the MOS transistor Q80 turns ON, resulting in a fall of the potential at the word line WLn. .To avoid this, the P-channel MOS transistor Q90 is provided. That is, when decoder is not selected, the potential at the node N6 is at the lower level, so that the MOS transistor Q90 turns ON and keeps the potential at the word line WLn at the high level of Vcc. Figure 10 illustrates a modification of the memory cell array shown in Fig. 7. Referring to Fig. 10, the memory cell array 100 comprises a plurality of static type memory cells, one of which is representatively denoted by reference symbol MCpo. The memory cell MC is constituted by four P-channel MOS transistors Qpl t Qp2 w Qp3 , and Qp4 , and two resistances R1 and R2. The MOS transistors Qp3 and Qpq and the resistances R1 and R2 are connected so that they constitute a flip-flop circuit. Each of the MOS transistors Qpl and Qp2 operates as a transfer gate, that is, each transistor transmits information between the flip-flop circuit and tpe bit line BL or BL in response to the voltage level at the word line The present invention may be practiced or embodied in still other ways without departing from the spirit or essential character thereof. For example, although in the illustrated preferred embodiments, a P-channel MOS or transfer gate transistor is used as an access gate/of a one tran- sistor cell, and an N-channel MOS transistor is used as a word line driver, the conduction types of the MOS tran sistors used may be changed to the opposite conduction types.

Claims: CLAIMS 1. A complementary semiconductor memory device comprising: a memory cell array (73; 100), each cell (MCp; MC ) having a first MIS transistor (Q po constituting p Qpl ' ) of a first conduction type, an access or transfer respective one or gate, connected to a/ a plurality of word lines; a decoding circuit (71) for decoding an address signal input, and based on a result of said decoding, generating a selecting signal; and a driving circuit (72; 90) having a second MIS transistor (Q80) of a second conduction type opposite to said first conduction type for selecting a specific word line among said plurality of word lines in response to said selecting signal. 2. A device according to claim 1, wherein said first MIS transistor (Op; Qpl ' Qp2) in each cell of said memory cell array (73; 100) is a P-channel type, and said second MIS transistor (Q80) in said driving circuit (72; 90) is an N-channel type. 3. A device according to claim 2, wherein said driving circuit (90) further comprises a third P-channel type MIS transistor (Q90) connected complementarily to said second MIS transistor (080). 4. A device according to claim X 2 or 3,wherein each cell (MC ) in said memory cell array (73) is a p dynamic type RAM structure. 3, 5. A device according to claim 1, 2 or/ wherein each cell (MC ) in said memory cell array (100) is a po static type RAM structure. any preceding 6. A device according to/c aim , wherein said decoding circuit (71) comprises a decoder (71A) and a operab e to generate predecoder (?lB), said decoder being / a first signal for selecting a group of word lines including said operable to generate specific word line, said predecoder Deing/ a second signal for activating said specific word line at a predetermined timing. 7. A device according to claim 6, wherein said is operable to driving circuit (72; 90)/transmit said second signal to said specific word line in response to said first signal.

Inventors: NAKANO, TOMIO, TAKEMAE, YOSHIHIRO
Applicants: FUJITSU LIMITED
Application year: 1986
Main classification: G11C8
IPC codes: G11C11, G11C8, G11C5