Silane resist materials and method for their preparation

Abstract: A silicone resist material of the present invention contains a polysilane of formula (I) as an indispensable structure, wherein R₁ to R₃ may be identical or may be different, each representing a hydrogen atom, an alkyl group with 1 to 10 carbon atoms, or a nonsubstituted or substituted aryl group with 6 to 14 carbon atoms, R₄ represents an alkylene group with 1 to 10 carbon atoms or a nonsubstituted or substituted phenylene group with 6 to 14 carbon atoms, and at least one of substituents R₅ to R₉ is a hydroxyl group, and the remaining groups other than the hydroxyl group among the groups R₅ to R₉ may be identical or may be different, each representing a hydrogen atom, a carboxyl group, or an alkoxy group with 1 to 10 carbon atoms, and n and k represent positive integers and m represents zero or a positive integer.

Description: BACKGROUND OF THE INVENTION Field of the Invention The present invention relates to polysilanes and silicone resist materials that contain these compounds, and more particularly to silicone resist materials that make it possible to form fine resist patterns that are used in the manufacture of integrated circuits for semiconductor elements. Description of the Prior Art In the manufacture of electronic parts for semiconductor elements, integrated circuits, fine processing techniques by means of photolithography has been used widely heretofore. The photolithographic techniques comprise a resist process and a etching process. In the -resist process a desired resist pattern is formed by spreading an appropriate resist material over a single crystal silicon wafer or the like, and then irradiating it with ultraviolet rays or the like using a masking plate with desired pattern on the resist material, or irradiating it directly with electron beam using electron beam lithography system. In the etching process the film of SiO 2 , Al which is the foundation film is processed by the use of the resist pattern thus obtained. In the fine processing techniques, accuracy of the products is dominated substantially by the performances of the photoresist which is being used, for example-, by its resolving power on the substrate, its accuracy of the photosensitivity, its adhesivity to the substrate. For this reason, various kinds of exposure technique, resist material have been proposed in order to form resist patterns with excellent properties. In recent years, however, the processing techniques are being used in a multitude of modes so that resist materials that can be easily and quickly processed are being desired on the one hand. On the other hand, photosensitive composites have been known as resist materials that are capable of forming high precision resist patterns. However, along with the diversification of functions and advancement of the electronic instruments, there has been an increased demand for a further miniaturization of patterns in order to realize an increase in the density and the degree of integration of the devices. Now, in the existing monolayered resist method in which a single resist layer is formed over a wafer or the like, there exist various kinds of problems that become obstructions to the miniaturization of the resist patterns. Namely, the degree of reduction in the dimension of the integrated circuits in the longitudinal direction has not been as large as that in the lateral dimension, so that the ratio of the height to the width of the resist patterns has necessarily been large. Consequently, the control of the changes in the dimensions of a resist pattern on a wafer that has a complex step structure has become increasingly difficult with the progress in the miniaturization of the patterns. Further, in various kinds of exposure systems, there are generated problems accompanying the reduction in the minimum dimensions. Thus, for instance, in the case of exposure with light, interference of the reflected light due to the level difference in the substrate is becoming to affect strongly the accuracy in the dimensions. Moreover, in the case of exposure with electron beams, it is becoming impossible to increase the ratio of the height to the width of the fine resist patterns, due to the proximity effect that is generated by the backscattering effect of electrons. Now, it was discovered that these various kinds of problems can be resolved by adopting the multilayered resist system. The multi-layered resist system is described, for instance, in Solid State Technology, 74 (1981), but there are also published numerous studies on the system elsewhere. In the multi-layered resist system, the most widely in general use currently is the resist system with three layer structure. This system consists of a bottom layer that serves to smooth out the steps in the substrate and to prevent the reflection from the substrate, an intermediate layer that functions as a mask in etching the bottom layer, and a top layer that serves as a photosensitive layer. Although the three-layered resist system possesses an advantage over the monolayered resist method in that it enables fine patterning, the system has a drawback in that the number of processes required up to the pattern formation has to be increased. EP-A-0147127 refers to a composition of matter for use in a lithographic process, which composition is obtained by interreacting a quinone diazo compound and an organosilicon compound. GB-A-2156834 discloses polysilane positive photoresist materials comprising specific recurring units as stated in this document, and methods for their use. SUMMARY OF THE INVENTION The general object of the present invention is to provide a variety of silane resist materials that are adapted to the various modes of their use. A first concrete object of the present invention is to provide silane resist materials that can be processed easily and quickly. A second concrete object of the present invention is to provide photosensitive silane resist materials which make it possible to form precision resist patterns with a minimum number of processes, without the use of the three-layered resist system. A third concrete object of the present invention is to provide silicone resist materials which contain silicon and yet permit alkaline development. In order to achieve the above objects, the present invention provides polysilanes that contain a structure as shown by the formula wherein R 1 to R 3 may be identical or may be different, each representing a hydrogen atom, an alkyl group with 1 to 10 carbon atoms, or a nonsubstituted or substituted aryl group with 6 to 14 carbon atoms, R 4 represents an alkylene group with 1 to 10 carbon atoms or a nonsubstituted or substituted phenylene group with 6 to 14 carbon atoms, and at least one of substituents R 5 to R 9 is a hydroxyl group, and the remaining groups other than the hydroxyl group among the groups R 5 to R 9 may be identical or may be different, each representing a hydrogen atom, a carboxyl group, or an alkoxy group with 1 to 10 carbon atoms, and n and k represent positive integers and m represents zero or a positive integer. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 to Fig. 10 are diagrams that show the 1 H-NMR spectrum and the IR spectrum, respectively, of an embodiment of the present invention. DETAILED DESCRIPTION OF THE INVENTION The polysilanes and silane resist materials of the present invention may be used for various purposes. For instance, the polysilanes are converted to SiC when heated to high temperatures so that they may be used as materials for ceramics. Further, silane resist materials that consist of the polysilane and an appropriate photosensitive agent can be used widely for general photoengraving and the like. Moreover, silane resist materials that consist of the polysilanes can be used as the resist materials for easily and quickly forming desired patterns for semiconductor wafers or the like. Still further, silane resist materials that consists of the polysilane and an appropriate photosensitive agent may be used as the resist materials for forming desired patterns with high precision in a minimum number of processes. Now, the case in which the present invention is most effective is the case of forming patterns with high precision for the wafers or the like. Accordingly, the present invention will be described in terms of expressions that are suitable for that purpose. It should be reminded, however, that it does not at all limit the scope of the present invention. Silicone Resist Materials for Forming High Precision Patterns (1) The silane resist materials to be used for the above purposes are characterized in that they contain polysilane that is represented by formula and an appropriate photosensitive agent, wherein R 1 to R 9 represent substituent groups as recited above and at least one of R 5 to R 9 represents the hydroxyl group, and n and k represent positive integers, and m is zero or positive integer. These silicone resist materials are used for the top layer film of the two-layered resist system. Namely, a silicone resist material of the present invention is spread over an appropriate bottom layer resist material that is coated directly over a silicon wafer or the like. After forming a top layer resist pattern by exposure and alkaline development, a desired pattern is formed on the bottom layer film by oxygen reactive ion etching (RIE). In order for this process to be feasible, the polysilane that is contained in the silicone resist material has to have a resistance to oxygen RIE, and in addition, it has to be developable in alkalis. In view of this, the polysilane of the present invention contain the carboxyl group or the phenol-based hydroxyl group in formula (I) ,so that they are alkaline soluble. Further, the polysilanes of the present invention contain the silicon bond in the principal chain of formula (I) ,so that they possess excellent resistance to oxygen gas plasma. Namely, upon receipt of irradiation of oxygen RIE, the polysilane quickly forms silicon dioxide (SiO 2 ) which is deposited on the bottom layer resist film, preventing its dispersion. To describe the resistance to oxygen RIE of the polysilane in more detail, consider the generally known resist materials that contain silicon as shown by formula or These resist materials also form silicon dioxide when they are exposed to oxygen gas plasma, so that they possess resistance to oxygen RIE. However, these resist materials contain silicon in the side chain, so that their resistance to oxygen RIE is somewhat weaker. This difference may be understood in the following way. Namely, in silicon dioxide that is deposited, silicon atoms generally form a three-dimensional network structure by the intermediary of oxygen atoms. In the silans of the present invention, silicon atoms are arranged in a row on the principal chain. Accordingly, in forming the SiO 2 structure from the high molecules, after first forming (-SiO-SiO-) structure by the creeping of oxygen atoms from oxygen gas plasm in between silicon atoms, additional oxygen atoms only need be combined successively to the (-SiO-SiO-) structure. In contrast, in the substances represented by formulae (VI) and (VII), silicon atoms are separated first from the side chains and pulled apart, and after forming the chain (-SiO-SiO-) through successive bonding of Si and O, oxygen atoms have to be received, so that it is less easy to form silicon dioxide compared with the case of the polysilanes of the present invention. Accordingly, the silicone resist materials of the present invention have a far superior resistance to oxygen RIE in comparison to other silicone resist materials. Now, in formula (I) for polysilane, the groups R 1 to R 9 other than the phenol-based hydroxyl group can be anything as long as the alkaline solubility and the resistance to oxygen RIE are not spoiled. However, the following choice for them may be suggested. Namely, for R 1 to R 3 , hydrogen atom, alkyl group with 1 to 10 carbon atoms, or nonsubstituted or substituted aryl group with 6 to 14 carbon atoms may be suggested. For R 4 , alkylene group with 1 to 10 carbon atoms, or nonsubstituted or substituted phenylene group with 6 to 14 carbon atoms may be considered. Further, for R 5 to R 9 , hydrogen atom, hydroxyl group, carboxyl group, alkoxy group with 1 to 10 carbon atoms, alkylene group with 1 to 10 carbon atoms, or nonsubstituted or substituted phenylene group with 6 to 14 carbon atoms may be considered. In the formulae, alkyl group with 1 to 10 carbon atoms mean methyl, ethyl, propyl, isopropyl, butyl, isobutyl, t-butyl, pentyl, hexyl, heptyl, octyl, nonyl, decyl, and so on. In addition, alkoxi group with 1 to 10 carbon atoms mean methoxy, ethoxy, isopropoxy, butoxy, pentyloxy, hexyloxy, heptyloxy, octyloxy, nonyloxy, decyloxy. Further, nonsubstituted or substituted aryl group with 6 to 14 carbon atoms means phenyl, p-tolyl, p-methoxyphenyl, p-chlorophenyl, p-trifluoromethylphenyl, o-tolyl, o-methoxyphenyl, p-trimethylsilylphenyl, p-tert-butylphenyl, 1-naphthyl, 2-naphthyl, 6-methyl-2-naphthyl 6-methoxy-2-napthyl. More precisely, these include For the polysilanes, it is desirable to have number average molecular weight of 2,000 to 500,000. If the number is less than 1,000, satisfactory coated films cannot be obtained when it is dissolved in a solvent and spread, whereas if it exceeds 1,000,000, solubility to the solvent becomes poor. The polysilane can be obtained easily by causing dichlorosilane that has phenol-based hydroxyl group protected by silyl ether to react with metallic sodium in xylene. The polysilane is decomposed and the molecular weight is decreased by high energy radiation such as light, electron beam, and X-rays due to its chemical structure , and the solubility in alkaline solutions is enhanced than in the state of polymer. By utilizing such a property, it is possible to form positive-type patterns by developing, after exposure, in an alkaline solution. Further, by introducing partially a functional group that polymerizes under the action of high energy radiation, such as acryloyl group, into phenol based hydroxyl group or phenyl group, it can be used as a negative-type resist material. In this case, the exposed portion is converted to have higher molecular weight so that its solubility to an alkaline solution is reduced than for the remaining part. The polysilanes of the present invention become SiC by being heated to high temperatures so that they can also be used as materials for ceramics. As a photosensitive agent to be used for the present invention, use may be made of those such as diazo compounds which form positive images or of those such as azido compounds which form negative images, and there exist no special restrictions to it so long as it is known generally as a photo sensitive agent. As such a photosensitive agent, one may mention, for instance, naphthoquinonediazido compound or azido compound. As naphthoquinonediazido compound, one may mention sulfonic acid ester that can be synthesized, for example, from 1,2-naphthoquinone-2-diazido-5-sulfonic acid chloride and a compound that has a phenol-based hydroxyl group. As compounds that possess hydroxyl group of phenol type, one may mention, for instance, 3,4,5-trihydroxybenzoic acid ethyl ester, 2,3,4-trihydroxybenzophenone, 2,2',4,4'-tetrahydroxybenzophenone, 2,3,4,4'-tetrahydroxybenzophenone, quercetine, morin, alizarin, quinizarin, and purpurin. In addition, as azido compounds, one may mention 3,3'-diazido-diphenylsulfone, 2-methoxy-4'-azidochalcone, and 1-(p-azidophenyl)-1-cyano-4-(2-phenyl)-1,3-butadiene. Among these, preferable are those that meet requirements on the solubility to the solvent, and the sensitivity to the wavelength of the light source in the exposure device. In the stepper that is in side current use, a light source with wavelength of 436 nm is being employed. For 436 nm, it is preferred to adopt bis (1,2-naphthoquinone-2-diazido-5-sulfonic acid)-2,3,4-trihydroxybenzo-phenone ester, 1-(p-azidophenyl)-1-cyano-4-(2-furyl)-1,3-butadiene, and so forth. These azido compounds can be used separately or as a mixed system of two or more kinds. When the compounding ratio of the photo sensitive agent is less than 5 parts by weight, the difference in the solubilities for the exposed portion and the unexposed portion is small so that satisfactory patterns cannot be obtained. On the other hand, if it exceeds 100 part by weight, the film spreading property becomes unsatisfactory. Therefore, 10 to 50 parts by weight is preferred. It should be noted that additives such as an ultraviolet ray absorber, surface active agent, and intensifier may be blended into the composites of the present invention. Moreover, in the present invention, an alkaline soluble resin may also be added. As an alkaline soluble resin, use may be made of any substance as long as it is soluble to alkaline solution. Thus, one may mention, for example, novolak resins that can be obtained by condensation of phenols and formaldehyde. As the phenols, one may mention, for example, phenol, o-chlorophenol, m-chlorophenol, p-chlorophenol, m-cresol, p-cresol, bisphenol A, and 4-chloro-3-cresol, 2,5-xylenol. Novolak resin can be obtained by condensing one or more than one kind of these substances with formalin. Such alkaline soluble resins not limited to novolak resins, and any resin may be used that has the aromatic ring and the hydroxyl group as the structural units, such as poly-p-vinylphenol, poly-p-isopropenylphenol, poly-(m-isopropenylphenol, copolymer of p-hydroxystyrene and methyl metacrylate, copolymer of p-hydroxystyrene and methyl acrylate, copolymer of p-isopropenylphenol and methyl acrylate, and copolymer of p-hydroxystyrene and methyl metacrylate Preferable are the copolymers of poly (p-vinylphenol) and methyl metacrylate. These resins are used separately or as a mixed system of two or more kinds. When the compounding ratio of the alkaline soluble resin to the polysilanes exceeds 200 parts by weight, the resistance to oxygen RIE is deteriorated. Therefore, the limit of the ratio is 200 parts by weight. To the photosensitive composite of the present invention, there may be combined, depending upon the need, a thermal polymerization preventive agent for stabilizing the storage, a halation preventive agent for preventing halation from the substrate, and an adhesivity enhancing agent for enhancing the adhesivity to the substrate. As described later, the photosensitive composite is spread over the smoothed layer that is formed on the surface of a substrate made of silicon, aluminum, or the like, in the state of dissolution in a solvent. As the solvents that may be used, there are ketone-based solvents such as acetone, methylethylketone, methylisobutylketone, and cyclohexanone, cellosolve R -based solvents such as methylcellosolve R , methylcellosolve R acetate, and ethyl-cellosolve R acetate, and ester-based solvents such as ethyl acetate, butyl acetate, and isobutyl acetate. These solvents may be used separately or as a mixed solvent of two or more kinds. Next, cases of using the silicone resist materials of the first kind as the top layer film of the two-layered resist system will be described in detail. As substances on which fine patterns are formed, one may mention for example, a silicon oxide film, chrome, aluminum, and copper which is deposited on substrates. As the resin for the bottom layer, it is appropriate to use a resin that can be removed by oxygen gas plasma. Thus, for instance, one may mention novolak resin, polyimide resin, rubber-based negative resist, novolak-based positive resist, polystyrene, polymethyl-metacrylate, positive-type resist that consists of substituted o-quinonediazido and novolak resin, polyvinyl phenol, polyester, polyvinyl alcohol, polyethylene, polypropylene, polybutadiene, polyvinyl acetate, and polyvinyl butylal. These resins may be used separately or as a mixed system. The resin for the bottom layer is spread after dissolved in a solvent. As such solvents, there do not exist special limitations, and one may mention, for example, toluene, xylene, o-dichlorobenzene, chloroform, ethanol, isopropyl alcohol, cyclopentanone, cyclohexanone, cellosolve R acetate, and ethyl ketone. Further, spreading of the resin may be carried out according to the conventional method, but preferable to be adopted is the spin coating method. The bottom layer is required to have a thickness that can smooth out the level differences in the substrate and can withstand the treatments for the substrate. Therefore, it is necessary to have a thickness of more than about 1.5 µm. Then, after baking the spread layer for about 0.5 to 120 minutes at 50 to 250°C, a silicone resist material of the present invention is spread over it. The silicone resist material consists of a photosensitive agent and a polysilane that contains the formula (I) as mentioned earlier. As the photosensitive agent, there is no restrictions so long as it is a photosensitive agent that is used in general, so that one may mention, for example, naphthoquinonediazido compounds and azido compounds. As naphthoquinonediazido compounds, one may mention, for example, sulfonate that can be synthesized from 1,2-naphthoquinone-2-diazido-5-sulfonic chloride and compounds that have hydroxyl group of phenol type. As the compounds that have phenol-based hydroxyl group, one may mention, for instance, 3,4,5-trihydroxybenzoic acid ethyl ester, 2,3,4-trihydroxybenzophenone, 2,2',4,4'-tetrahydroxy-benzophenone, quercetine, morin, alizarin, quinizarin, and purpurin, 2,3,4,4'-tetrahydroxy-benzophenone. Further, as the azido compounds, one may mention 3,3'-diazidodiphenylsulfone, 2-methoxy-4'-azidochalcone, and 1-(p-azidophenyl)-1-cyano-4-(2-furyl)-1,3-butadiene. In selecting one from among these, solubility to the solvent needs be considered, and it has to have sensitivity to the wavelength of the light source in the exposure apparatus. Since light sources with wavelength of 436 nm are employed for the stepper that is in wide use currently, it is preferred, for 436 nm, to employ bis (1,2-naphthoquinone-2-diazido-5-sulfonic acid)-2,3,4-trihydroxybenzophenone ester, and 1-(p-azidophenyl)-1-cyano-4-(2-furil)-1,3 butadiene. These azido compounds may be used separately or as a mixed system of two or more kinds. When the compounding ratio of the photosensitive agent is less than 5 parts by weight, the difference in the solubilities for the exposed part and for the unexposed part becomes small, so that satisfactory patterns cannot be obtained, whereas when it exceeds 100 parts by weight, the film spreading property becomes deteriorated. The preferable range is 10 to 50 parts by weight. Further, depending upon the need, additives such as an ultraviolet ray absorbing agent, a surface active agent, and an intensifier may also be combined with the resist materials of the present invention. The silicone resist material can be-obtained easily by dissolving the two components mentioned above in a solvent such as cyclohexanone, and mixing them by stirring. The drying conditions for the mixture, in the case of a photosensitive composite for the top layer, are normally 50 to 200°C, preferably 80 to 120°C, and normally 0.5 to 120 minutes, preferably 1 to 60 minutes. (In the case of resin for the bottom layer, the conditions are normally 50 to 250°C, preferably 80 to 220°C, and normally 0.5 to 120 minutes, preferably 1 to 90 minutes.) As a method of spreading such a silicone resist material, method such as rotary spreading which uses a spinner, immersion, spraying, printing, and others are available. The thickness of the spread film is adjustable by varying the spreading means, concentration of the resin component in the solution, viscosity of the solution, and so on. Following that, drying at an appropriate temperature is given. The temperature is normally less than 150°C, preferably about 70 to 120°C. When drying is over, the photosensitive composite is exposed. Exposure is carried out according to the conventional method of irradiating with energetic radiation such as ultraviolet radiation, visible light, electron beam, and X-rays. In such an irradiation, either of the contact or projective exposure method may be adopted. Further, the optimum amount of required exposed light in this case is normally 1 to 100 mJ/cm 2 , although it may vary depending upon the composition of the composite. By the irradiation, the solubility of the exposed art for alkaline solution is increased. Next, the exposed portion where the solubility for alkaline solution is increased is removed by alkaline aqueous solution to produce a resist pattern. This is the so-called development process. Here, as the alkaline aqueous solution, one may mention tetraalkyl ammonium hydroxide aqueous solution such as tetramethyl ammonium hydroxide aqueous solution, and inorganic alkaline aqueous solution such as sodium hydroxide and pottasium hydroxide. Moreover, these aqueous solutions are normally given a concentration of less than 15% by weight. It is to be noted that development is carried out by the immersion method, spray method. Following the above, the resist pattern is dried. The conditions for drying are temperature of 100 to 200°C, preferably 120 to 180°C, and duration of 30 seconds to 120 minutes, preferably 1 to 90 minutes. Next, the smoothed layer (bottom layer) is etched by oxygen RIE, by using the resist pattern formed above as the mask. In so doing, in the resist pattern (top layer) there is formed a film that contains silicon dioxide (SiO 2 ) due to exposure to oxygen RIE. As a result, the resist pattern becomes to possess a resistance to oxygen RIE which is 10 to 100 times as large as that of the exposed portion of the bottom layer that was irradiated. When the bottom layer under irradiation is etched entirely by oxygen RIE, there will be obtained an optimal pattern profile. By the use of a pattern formed in the above manner as a mask, etching of the substrate is carried out. Etching may be done by wet etching or by dry etching, but dry etching is preferred for the case of forming fine patterns that have line width of less than 3 µm. In wet etching, use is made of aqueous solution of fluoric acid, aqueous solution of ammonium fluoride, and others for the case of silicon oxide film, aqueous solution of phosphoric acid, aqueous solution of acetic acid, aqueous solution of nitric acid, and others for the case of aluminum, and aqueous solution of cerium ammonium nitrate for the case of chrome. As the gas for dry etching, use is made of CF 4 , C 2 F 6 , CCl 4 , BCl 3 , Cl 2 , HCl, H 2 , and others, combined appropriately depending upon the need. The conditions for etching are determined as the concentration of the wet etching agent within the reaction chamber, concentration of gas for dry etching, reaction temperature, reaction time, and others, -depending upon the combination of the kind of the substance from which the fine pattern is to be formed and the photosensitive composite used. They are especially limited by the method of etching and others. After etching, the unexposed portion that remains on the substrate is removed from the above-mentioned substance by means of a remover such as J-100 (made by Nagase Chemical Industry Company), oxygen gas plasma, and others. Other necessary processes may be added safely depending upon the needs, in addition to the processes described in the above. These include, for example, a rinsing (normally with water) process that is carried out for the purpose of washing and removing the developing solution from the above-mentioned substance following the development, a pre-treatment process which is given prior to the spreading, for the purpose of improving the adhesivity between the photosensitive composite and the substance from which a fine pattern is to be manufactured, a baking process which may be given before or after development, and a process of re-irradiation with ultraviolet radiation which is given prior to dry etching. It should be noted that the silicone resist material of the present invention may also be used as a conventional monolayered resist. (Embodiments) Example 1 First 135 g of metaisopropenyl phenol and 109 g of trimethylsilyl chloride were dissolved in dehydrated ether (500 g), and 101 g of triethylamine was dropped. After filtering the salt and concentrating the filtered solution, it was distilled to obtain trimethylsilylmetaisopropenyl-phenyl ether (referred to as [IX] hereinafter). After bringing 181 g of [IX], 177 g of phenyl-dichlorosilane, and 5 g of chloroplatinic acid into reaction, it was distilled to obtain [X] that is shown below. Then, 17.9 g of [X], 7.2 g of dimethyldichlorosilane, and 9.2 g of dispersed sodium were reacted for 20 hours at 130°C in 100 ml of dehydrated xylene. The reacted substance was poured into methanol and after filtering unnecessary components, the filtered solution was concentrated. Then, after further adding water and filtering undissolved components, the filtered solution was acidified with aqueous solution of hydrochloric acid. After extracting ether, it was concentrated to obtain a polysilane (the number average molecular weight M n : 230,000 and the molecular weight M w : 560,000). In Fig. 1 is shown the NMR spectrum of the polysilane obtained, and in Fig. 2 is shown its IR spectrum. These graphs show that the polysilane has a structure as shown by [XI] given below. The polysilane was found to be soluble to methanol, tetrahydrofuran (THF), and the aqueous solution of NaOH. In contrast to that, similar polysilanes that do not possess the OH group were insoluble to methanol, THF, and the aqueous solution of NaOH. By causing vinyl compounds to react analogously to Example 1, polysilanes of Examples 2 to 4 as shown in the following table were obtained. These were soluble to methanol, THF, and the aqueous solution of NaOH. The 1 H-NMR spectra for Examples 2, 3, and 4 are shown in Figs. 3, 4, and 5, respectively. Examples 2 to 4 Example 5 Five grams of a polymer with number average molecular weight 7,000 shown by (In the formula, x:y = 1:1), 5 g of m,p-cresolnovolak resin (number average molecular weight 1,200), and 4 g of di (1,2-naphtho-quinone-2-diazido-5-sulfonic acid)-2,3,4-trihydroxy-benzophenone ester were dissolved in 100 g of cyclohexanone, and they were mixed by stirring to obtain a photosensitive composite of the present invention. Next, a substrate on which was spread a sufficiently thick smoothing agent was heated for 1 hour at 200°C. Then, the photosensitive composite of the present invention which was passed through a filter of 0.2 µm was spread over the substrate to a thickness of 0.6 µm, pre-baked for 5 minutes at 80°C, and then was exposed to the light (at 50 mJ/cm 2 ) of wavelength 436 nm. After that, it was developed for 1 minute in an aqueous solution of tetramethylammonium hydroxide of 3.0% by weight. Then, the smoothed layer was etched by oxygen RIE, using the resist pattern formed as a mask. When the sectional surface was observed by the scanning electron microscope, it was confirmed that the film had a thickness of 1.5 µm and a steep profile consisting of lines of 0.5 µm width and spaces. Example 6 Five grams of a polymer with number average molecular weight 30,000 as shown by (In the formula, x:y = 1:1), 5 g of m,p-cresolnovolak resin (number average molecular weight : 1,200), and 4 g of di (1,2-naphthoquinone-2-diazido-5-sulfonic acid)-2,3,4-trihydroxybensophenone ester were dissolved in 100 g of cyclohexanone, and they were mixed by stirring to obtain a photosensitive composite of the present invention. Example 7 Ten grams of a polymer with number average molecular weight of 7,000 as shown by (In the formula, x:y = 1:1), and 4 g of di (1,2-naphthoquinone-2-diazido-5-sulfonic acid)-2,3,4-trihydroxybenzophenone ester were dissolved in 100 g of cyclohexanone, and a photosensitive composite of the present invention was obtained by mixing them while stirring. Example 8 Ten grams of a polymer with number average molecular weight of 30,000 as shown by (In the formula, x:y = 1:1), and 4 g of di (1,2-naphthoquinone-2-diazido-5-sulfonic acid)-2,3,4-trihydroxybenzophenone ester were dissolved in 100 g of cyclohexanone, and a photosensitive composite of the present invention was obtained by mixing them while stirring. By making observation on patterns that were obtained by applying treatments analogous to Example 1 to the composites formed in Examples 6 to 8, it was confirmed that the sensitivity was 50 mJ/cm 2 and that they had steep profiles that consist of lines of 0.5 µm width and spaces. Example 9 Five grams of a polymer with number average molecular weight of 30,000 as shown by (In the formula, x:y = 1:1), 5 g of m,p-cresolnovolak resin (number average molecular weight : 1,200), and 4 g of di (1,2-naphthoquinone-2-diazido-5-sulfonic acid)-2,3,4-trihydroxybenzophenone ester were dissolved in 100 g of cyclohexanone to obtain a photosensitive composite of the present invention by mixing them while stirring. An observation of the formed pattern by the treatments similar to Example 5 showed that the composite had a sensitivity of 60 mJ/cm 2 and a steep profile that consists of lines with 0.5 µm width and spaces. Example 10 After dropping 500 g of metaisopropenylphenol into 500 g of hexamethyldisilazane and stirring for 3 hours, trimethylsilylmetaisopropenylphenyl ether (abbreviated as [XII] hereinafter) was obtained. Afther bringing 206 g of [XII], 115 g of methyldichlorosilane, and 5 g of chloroplatinic acid into reaction in toluen, [XIII] was obtained by distillation. Eighty grams of [XIII] and 30 g of dispersed sodium were reacted in 200 ml of dehydrated toluen at 100°C for 1.5 hours. Filtering and concentrating the reactant, and stirring it by pouring methanol, trimethylsilyl ether was hydrolyzed. The reactant was concentrated, dissolved in small amount of methanol, and a polysilane [XIV] was obtained by reprecipitation in water. Its number average molecular weight M n was 22,000 and average molecular weight M w was 39,000. In Fig. 6 is shown IR spectrum, and in Fig. 7 is shown 1 H-NMR spectrum, of the polysilane obtained. The polysilane was found to be soluble in methanol, THF, cyclohexanone, aqueous solution of NaOH, and aqueous solution of tetramethylammonium hydroxide. Example 11 to Example 13 Example 11 Example 12 Example 13 The polymer of Example 11 was obtained by bringing the chlorosilane [XIII] used in Example 10 into reaction with dimethyldichlorosilane, the polymer of Example 12 was obtained by bringing [XIII] into reaction with methylphenyldichlorosilane, and the polymer of Example 13 was obtained by bringing [XIII] into reaction with tolylmethyldichlorosilane. The reaction conditions and others were similar to those of Example 10. The 1 H-NMR spectra for Examples 11, 12, and 13 are shown in Figs. 8, 9, and 10, respectively. Example 14 A bottom layer was formed by spreading the solution obtained by dissolving novolak resin in acetic acid cellosolve, on a silicon wafer with spinner, and by heating it at 220°C for 1 hour. Then, a photosensitive coating of 0.40 µm was formed by spreading the solution obtained by dissolving 5 g of polysilane [XIII] in 10 g of cyclohexanone on the bottom layer with spinner, and by heating it at 120°C for 5 minutes on the hot plate. Following that, the top layer was exposed to monochromatic light of 248.8 nm, and developed for 40 seconds in 0.6% aqueous solution of NaOH, dried at 80°C for 30 minutes to form a resist pattern on the top layer. Next, the bottom layer was etched by oxygen gas plasma (2.0 x 10 -2 Torr and 0.06 W/cm 2 ) using the pattern formed on the top layer. As a result, there were formed lines of 0.5 µm and spaces. Example 15 A photosensitive coating of 0.6 µm thickness was formed by spreading the solution obtained by dissolving 5 g of the polysilane of Example 11 in 10 g of cyclohexanone on a bottom layer obtained similarly to Example 14. Then, it was exposed to monochromatic light of 249 nm, developed with 10% aqueous solution of NaOH for 40 seconds, and dried at 90°C for 30 minutes to form a resist pattern on the top layer. As a result of etching the bottom layer with oxygen gas plasma using the pattern that was formed on the top layer, there were formed lines of 0.5 µm and spaces. Example 16 Lines of 0.6 µm and spaces were formed by dissolving the polysilane of Example 12 in cyclohexanone, and by the use of a method similar to Example 15. Example 17 Lines of 0.6 µm and spaces were formed by dissolving the polysilane of Example 13 in cyclohexanone, and by the use of a method similar to Example 15. Example 18 The silicone resist material of the present invention was obtained by dissolving 16 g of a polymer which is shown by Formula: with number average molecular weight 40,000 and 4 g of di(1,2-naphthoquinone-2-diazido-5-sulfonic acid)-2,3,4-trihydroxybenzophenone ester in 50 g of cyclohexanone, and by mixing and stirring. Next, a bottom layer of thickness 1.5 µm was formed by spreading the solution obtained by dissolving novolak resin in etylcellosolve acetate on a silicon wafer with spinner, and by heating it at 220°C for 1 hour. The photosensitive composite of the present invention was spread on top of it to a thickness of 0.6 µm, and after pre-baking at 90°C for 5 minutes, it was exposed to light (50 mJ/cm 2 ) of 436 nm. Following that, it was developed for 60 seconds with 3.0% by weight aqueous solution of tetramethylammonium hydroxide. Then, the smoothed layer was etched by oxygen RIE using the resist pattern formed as a mask. An observation of the cross section with scanning electron microscope revealed that it had a thickness of 1.5 µm and a steep profile with 0.5 µm lines and spaces. Example 19 The silicone resist material of the present invention was obtained by dissolving 20 g of a polymer shown by Formula: (x:y = 1:1) with number average molecular weight 50,000 and 5 g of di(1,2-naphthoquinone-2-diazido-5-sulfonic acid)-2,3,4-trihydroxybenzophenone ester in 50 g of cyclohexanone, and by mixing and stirring. Example 20 The silicone resist material of the present invention was obtained by dissolving 20 g of a polymer shown by Formula: (x:y = 1:1) with number average molecular weight 10,000 and 5 g of di(1,2-naphthoquinone-2-diazido-5-sulfonic acid)-2,3,4-trihydroxybenzophenone ester in ethylcellosolve R acetate, and by mixing and stirring. Example 21 The silicone resist material of the present invention was obtained by dissolving 20 g of a polymer shown by Formula: (x:y = 2:1) with number average molecular weight 10,000 and 5 g of di(1,2-naphthoquinone-2-diazido-5-sulfonic acid)-2,3,4-trihydroxybenzophenone ester in 50 g of ethylcellosolve R acetate, and by mixing and stirring. Example 22 The silicone resist material of the present invention was obtained by dissolving 20 g of a polymer shown by Formula: (x:y = 4:1) with number average molecular weight 15,000 and 5 g of di(1,2-naphthoquinone-2-diazido-5-sulfonic acid)-2,3,4-trihydroxybenzophenone ester in 70 g of ethylcellosolve R acetate, and by mixing and stirring. Example 23 The silicone resist material of the present invention was obtained by dissolving 20 g of a polymer shown by Formula: (x:y = 2:1) with number average molecular weight 20,000 and 5 g of di(1,2-naphthoquinone-2-diazido-5-sulfonic acid)-2,3,4-trihydroxybenzophenone ester in 70 g of cyclohexanone, and by mixing and stirring. Example 24 The silicone resist material of the present invention was obtained by dissolving 30 g of a polymer shown by Formula: with number average molecular weight 30,000 and 10 g of di(1,2-naphthoquinone-2-diazido-5-sulfonic acid)-2,3,4-trihydroxybenzophenone ester in 100 g of cyclohexanone, and by mixing and stirring. Example 25 The silicone resist material of the present invention was obtained by dissolving 20 g of a polymer shown by Formula: (x:y = 1:1) with number average molecular weight 40,000 and 5 g of di(1,2-naphthoquinone-2-diazido-5-sulfonic acid)-2,3,4-trihydroxybenzophenone ester in 50 g of cyclohexanone, and by mixing and stirring. Using the composites obtained by Examples 19 to 25, formed patterns were observed by procedures similar to Example 18. As a result, it was confirmed that they had sensitivity of 50 mJ/cm 2 and a steep profile with lines of 0.5 µm and spaces.

Claims: A silane resist material, characterized in, that it contains a polysilane of formula (I) wherein R 1 to R 3 may be identical or may be different, each representing a hydrogen atom, an alkyl group with 1 to 10 carbon atoms, or a nonsubstituted or substituted aryl group with 6 to 14 carbon atoms, R 4 represents an alkylene group with 1 to 10 carbon atoms or a nonsubstituted or substituted phenylene group with 6 to 14 carbon atoms, and at least one of substituents R 5 to R 9 is a hydroxyl group, and the remaining groups other than the hydroxyl group among the groups R 5 to R 9 may be identical or may be different, each representing a hydrogen atom, a carboxyl group, or an alkoxy group with 1 to 10 carbon atoms, and n and k represent positive integers and m represents zero or a positive integer. The silane resist material of claim 1, wherein the ratio m/n of m to n is in the range of 0 to 5. The silane resist material of claim 1, wherein said alkyl group with 1 to 10 carbon atoms is methyl, ethyl, propyl, isopropyl, butyl, isobutyl, t-butyl, pentyl, hexyl, heptyl, octyl, nonyl, or decyl. The silane resist material of claim 1, wherein said nonsubstituted or substituted aryl group with 6 to 14 carbon atoms is phenyl, p-tolyl, p-methoxyphenyl, p-chlorophenyl, p-trifluoromethylphenyl, o-tolyl, o-methoxyphenyl, p-trimethylsilylphenyl, p-tert-butyl-phenyl, 1-naphthyl, 2-naphthyl, 6-methyl-2-naphthyl, or 6-methoxy-2-naphtyl. The silane resist material of claim 4, wherein said group R 1 is a phenyl group, and R 2 and R 3 are both methyl groups. The silane resist material of claim 5, wherein said group R 4 is a propylene group, either one of R 6 and R 8 is a hydroxyl group, and the remaining groups of R 5 to R 9 are all hydrogen atoms. The silane resist material of claim 5, wherein said group R 7 is a hydroxyl group. The silane resist material of claim 7, wherein said group R 4 is a trimethylene group, either one or R 6 and R 8 is a methoxy group, and the remaining groups of R 5 , R 6 , R 8 and R 9 are hydrogen atoms. The silane resist material of claim 7, wherein said group R 4 is a propylidene group, either one of R 6 and R 8 is a methoxy group, and the remaining groups of R 5 , R 6 , R 8 and R 9 are hydrogen atoms. The silane resist material of claim 7, wherein said group R 4 is a propylidene group, either one of R 6 and R 8 is a hydroxyl group, and the remaining groups of R 5 , R 6 , R 8 and R 9 are hydrogen atoms. The silane resist material of claim 2, wherein said group R 1 is a phenyl group, R 2 is an ethyl group, and R 3 is a methyl group. The silane resist material of claim 11, wherein either one of said group R 6 and R 8 is a hydroxyl group, and the remaining groups of R 5 to R 9 are hydrogen atoms. The silane resist material of claim 11, wherein said group R 4 is a propylidene group, R 7 and either one of R 6 and R 8 are hydroxyl groups, and the remaining groups of R 5 , R 6 , R 8 and R 9 are hydrogen atoms. The silane resist material according to any of Claims 1 to 13, characterized in, that it comprises a photosensitive agent. The silane resist material according to Claim 14, characterized in said photosensitive agent is a diazido compound, and azido compound or a naphthoquinonediazido compound. The silane resist material according to Claim 14 or 15, characterized in, that the compounding ratio of said polysilane and photosensitive agent is 5 to 100 parts by weight of the photosensitive agent to 100 parts by weight of the polysilane. The silane resist material according to Claim 16, characterized in, that the compounding ratio of said polysilane and photosensitive agent is 10 to 50 parts by weight of the photosensitive agent to 100 parts by weight of the polysilane. The silane resist material according to any of claims 1 to 17, characterized in that it further comprises an other alkaline soluble resin. A method of manufacturing the polysilane of formula (I) as claimed in Claim 1 which comprises bringing a dichlorosilane that possesses a hydroxyl group of phenol type that is protected by silylether into reaction with metallic sodium in xylene.

Inventors: HAYASE RUMIKO, HAYASE SHUJI, HIRATA AKIKO, ONISHI YASUOBU, HAYASE, RUMIKO, HAYASE, SHUJI, HIRATA, AKIKO, ONISHI, YASUOBU
Applicants: TOSHIBA KK, KABUSHIKI KAISHA TOSHIBA
Application year: 1986
Main classification: C08G77
IPC codes: C08L83, C08G77, G03F7