A METHOD FOR THE PRODUCTION OF SEMICONDUCTOR DEVICES USING LIQUID EPITAXY

Abstract: A method for the production of semiconductor devices, using liquid phase epitaxy of semiconductors of Groups III to V of the periodic table, in which on a Te-doped first layer, a second layer having a polarity different from that of the first layer is grown, wherein a non-Te-doped third layer having the same polarity as the first layer is grown between the first layer and the second layer.

Description: This invention relates to a method for the production of semiconductor devices which minimizes undesirable phenomenon such as a non-uniform segregation of Te at the the interface when a p-n junction or a heterojunction is formed in semiconductors derived from Group III - V compounds containing Te. Liquid-phase epitaxy of semiconductors formed from Group III - V compounds is widely used as a conventional production method for semiconductor lasers and light-emitting diodes, see for instance U.S. Patent 4479222. When such devices are produced, Te is often used as an n-impurity. This makes it possible to obtain a crystal of high electron density with relative ease, and the process can be controlled readily. However, there is a lamellar distribution of areas on the surface of the layer in which Te is used as an impurity where the density of Te is extremely high. In this case, when additional crystals are being grown continuously, undesirable effects often occur with certain characteristics of the devices, such as a decrease in the uniformity of the crystal grown on the said surface of the crystal and an increase at the interface in the recombination center. For example, Figure 3 shows a wafer which is produced as follows: On a p-GaAs substrate 31, a Te-doped AlGaAs current blocking layer (10¹⁹ cm⁻³) 32 having a thickness of 0.7 µm and a non-Te-doped GaAs surface-protective layer 33 having a thickness of 0.1 µm are grown by liquid phase epitaxy. When the thin semiconductor layer 33 is grown on the layer 32 containing Te in a high concentration, the morphology of the crystal surface is lamellar, as shown in Figure 4. It has also been found that the non-Te-doped GaAs surface-protective layer 33 does not grow as is shown by the hatched areas in Figure 4. The lamellar growth of this thin layer 33 originates in the non-uniform segregation of Te on the surface of the underlying AlGaAs current blocking layer 32. The form of the Te segregation affects the shape of the lamellae. Partial growth of the surface-protective layer 33 means that the AlGaAs current blocking layer 32 containing Al on the surface thereof causes a partial exposure to air. When this wafer is used as a substrate for subsequent crystal growth, growth is not possible in this area, resulting in a major problem. Next, problems that arise when this method is used in the production of semiconductor laser devices will be discussed. Figure 5 is a sectional view of a common semiconductor laser device of double heterostructure. On an n-GaAs substrate 51, a Te-doped n-Al x Ga 1 - x As cladding layer 52, a Mg-doped p-Al y Ga 1 - y As active layer 53, a Mg-doped p-Al x Ga 1-x As cladding layer 54 and a Zn-doped p⁺-GaAs ohmic contact layer 55 are successively grown by liquid phase epitaxy. This device has the same structure as the above-mentioned one in that the this layer (the p-Al y Ga 1 - y As active layer) 53 is formed on the Te-doped crystal layer (the n-Al x Ga 1 - x As cladding layer) 52. The amount of Te doped here is 10¹⁸ cm-³, which is about 1/10th times that of the example given above. For that reason, the undesirable effect of partial growth of the active layer 53 does not occur. However, various analyses suggest that the interface between the n-cladding layer 52 and the active layer 53 has scattered regions of mixed crystals and the existence of non-radiate recombination centres. These have undesirable effects on the characteristics of the semiconductor laser device. Some examples of such effects include an increase in threshold current, a lowering of the differential quantum efficiency, and a decrease in the life-span of the device. In accordance with one aspect of the present invention, there is provided a method for the production of a semiconductor device using liquid phase epitaxy of semiconductors of the AlGaAs/GaAs systems, in which between a Te-doped AlGaAs first layer and a second layer selected from one of said systems of a conductivity type different from that of the first layer, there is grown a non-Te-doped third layer selected from one of said systems of the same conductivity type as that of the first layer, whereby a p-n junction is formed between the second layer and the third layer. In accordance with another respect of the invention, there is provided a method for the production of a semiconductor device using liquid phase epitaxy of semiconductors of the AlGaAs/GaAs systems, in which between a Te-doped AlGaAs first layer and a second layer selected from one of said systems of a crystal composition different from that of the first layer, there is grown a non-Te-doped third layer of the same crystal composition as that of the first layer, whereby a heterojunction is formed between the second layer and the third layer. Thus, the invention described herein makes possible the object of providing a method for the production of semiconductor devices which minimizes undesirable effects on the device characteristics caused by the non-uniform segregation of Te at the interface when a p-n junction or when a heterojunction is formed in Te-doped semiconductor layers, so that devices can be produced with an excellent reproducibility. For a better understanding of the invention and to show how the same may be carried into effect, reference will now be made, by way of example, to the accompanying drawings in which: Figure 1(a) is a first view showing a wafer produced according to this invention; Figure 1(b) is a front view showing a semiconductor laser device produced using the wafer shown in Figure 1(a) according to this invention; Figure 2 is a front view showing another semiconductor laser device according to this invention; Figure 3 is a front view showing a conventional wafer; Figure 4 is the morphology of the crystal surface of the wafer shown in Figure 3; and Figure 5 is a front view showing another conventional wafer. Figure 1(a) shows a wafer according to this invention, which is produced as follows: On a p-GaAs substrate 11, a Te-doped Al x Ga 1-x As current blocking layer (approximately 10¹⁹ cm⁻³) 12 having a thickness of 0.6 µm, an Al x Ga 1-x As buffer layer 13 having a thickness of 0.3 µm, and a GaAs surface-protective layer 14 having a thickness of 0.1 µm are successively grown by liquid phase epitaxy. This wafer is constructed in such a manner that the non-Te-doped Al x Ga 1-x As buffer layer 13 having the same crystal composition as the Te-doped Al x Ga 1-x As current blocking layer 12 is sandwiched between the Te-doped Al x Ga 1-x As current blocking layer 12 and the GaAs surface-protective layer 14, and accordingly the structure of this wafer is quite different from that of the conventional wafer shown in Figure 3. Due to the buffer layer 13, the formation of a lamellar unevenness on the surface of the Te-doped layer 12 is suppressed, so that the surface-protective layer 14 can be grown with a uniformity over the whole surface of the substrate, resulting in a growth wafer having a mirror-like surface. Figure 1(b) shows a semiconductor laser device which is produced using the above-mentioned wafer as follows: A channel 61 having a width of 4.0 µm is formed on the wafer shown in Figure 1(a) in a manner that it reaches the p-substrate 11 through the layers 14, 13 and 12, followed by a liquid phase epitaxial growth treatment to successively grow a p-Al y Ga 1-y As cladding layer 15, a p- (or n-) Al z Ga 1-z As active layer 16, an n-Al y Ga 1-y As cladding layer 17 and an n + -GaAs ohmic contact layer 18 on the surface-protective layer 14 including the channel 61 (wherein 0<x<z<y<1). Since the surface-protective layer 14 has been grown uniformly over the whole surface of the substrate, subsequent crystal growth can be attained, as well, with a uniformity over the whole surface of the wafer. This desirable effect results from the existence of the buffer layer 13. Figure 2 shows another wafer according to this invention, which is produced, as mentioned below, by the application of the method of this invention to a conventional wafer in which an active layer is grown on a Te-doped layer. On an n-GaAs substrate 21, a Te-doped n-Al x Ga 1-x As cladding layer (approximately 10¹⁸cm⁻³) 22 having a thickness of 0.6 µm, a non-Te-doped n-Al x Ga 1-x As buffer (cladding) layer 23 having a thickness of 0.2 µm, an n- (or p-) Al y Ga 1-y As active layer 24 having a thickness of 0.1 µm, a p-Al x Ga 1-x As cladding layer 25 having a thickness of 0.8 µm and a p⁺-GaAs ohmic contact layer 26 having a thickness of 1.0 µm are successively grown fly liquid phase epitaxy. As compared to the conventional wafer shown in Figure 5 in which the active layer 54 is grown directly on the Te-doped cladding layer 52, in the resulting wafer, the formation of lamellar unevenness on the surface of the Te-doped layer 22 is suppressed due to the existence of the non-Te-doped buffer layer 23 containing Si, thereby allowing improvement of crystallization of either the active layer 24 or the interface between the active layer 24 and the buffer layer 23. Thus, the threshold current, the differential quantum efficiency, and the life-span of a semiconductor laser device resulting from the above-mentioned wafer can be improved. Although Si was added as an impurity to the buffer layer 23 in the above-mentioned examples, other atoms functioning as an n-impurity such as Sn, etc., can be used with the same effect as the above-mentioned. In the above-mentioned examples, both the polarity and the principal crystal composition of the layer 23 containing no Te are the same as those of the layer 22 containing Te. Various modifications of the wafers or the semiconductor laser devices according to this invention include: (i) Wafers or devices which are designed using other semiconductor materials of Groups III to V of the periodic table instead of the AlGaAs/GaAs systems. (ii) Other semiconductor devices instead of the semiconductor laser devices.

Claims: A method for the production of a semiconductor device using liquid phase epitaxy of semiconductors of the AlGaAs/GaAs systems, in which between a Te-doped AlGaAs first layer (22) and a second layer (24)selected from one of said systems of a conductivity type different from that of the first layer, there is grown a non-Te-doped third layer (23) selected from one of said systems of the same conductivity type as that of the first layer (22), whereby a p-n junction is formed between the second layer (24) and the third layer (23). A method for the production of a semiconductor device using liquid phase epitaxy of semiconductors of the AlGaAs/GaAs systems, in which between a Te-doped AlGaAs first layer (12) and a second layer (14) selected from one of said systems of a crystal composition different from that of the first layer (22), there is grown a non-Te-doped third layer (13) of the same crystal composition as that of the first layer (12), whereby a heterojunction is formed between the second layer (14) and the third layer (13).

Inventors: MATSUI, SADAYOSHI, MATSUMOTO, MITSUHIRO, TANEYA, MOTOTAKA
Applicants: SHARP KABUSHIKI KAISHA
Application year: 1986
Main classification: H01L21
IPC codes: H01S5, H01L27, H01L21, H01L33