MEMORY TEST PATTERN GENERATOR

Abstract: A memory test pattern generator is disclosed, which generates a memory test pattern by reading out data from a microinstruction program memory (1) according to an instruction of an address counter (2) and causing an address generator (4), a data generator (5) and a timing generator (16) to generate an address, a data and a timing signal, respectively, according to the read-out data. To test a memory device, which has internal address generation means and is capable of address accessing by supplying a clock, data representing the number of times of internal address generation is set in a repeat register (22). When a signal representing the internal address mode is read out from the microinstruction program memory (1), the increment of the address counter is stopped by a repeat controller (21), and the operation in the address and data generators is in­ hibited. At the same time, a timing set controller (26) and an internal address generator (23) are rendered opera­ tive, whereby an internal address is generated. An address multiplexer (24) replaces predetermined bits of a fixed address generated from the address generator with the internal address. Further, according to the internal address fixed data of the data generator is selectively passed bit by bit through a data multiplexer (25). Further, the timing set controller (26) produces timing data representing times before, during and after the internal address generation according to a timing reference signal from the repeat controller (21).

Description: BACKGROUND OF THE INVENTION This invention relates to a memory test pattern generator for generating a test pattern for a so-called nibble memory, which has internal address generating means and is capable of address accessing by merely supplying a clock. A semiconductor random access memory (hereinafter referred to as RAM) is capable of random accessing to all the addresses. All the addresses are accessed by an externally supplied address signal. There is one kind of RAM called nibble memory, which has internal address generating means and is capable of incrementing internal address by merely supplying a clock. An example of this memory is "MB81257" by Fujitsu Co., Ltd. in Japan. This memory is capable of freely accessing to all the addresses in the normal mode like the ordinary memory. The nibble memory can operate in a nibble mode, i.e., internal address mode as well as in the normal mode. In the internal address mode, the following operation takes place. When the internal address mode is set with one of the addresses of the memory accessed, several, usually three, addresses following the accessed address can also be accessed by merely supplying a clock. The memory has a small internal address counter (address generation means) for generating internal addresses each constituted by, for example, two bits in the case of the nibble mode. The counter is incremented from a count corresponding to the last externally accessed address. A typical nibble memory has a two-bit internal counter and is capable of address increments for three addresses. It is possible to set a desired number of increments, for instance corresponding to one page, achieving a page mode. The maximum number of increments is determined by the modulo of the address counter provided in the memory. For this reason, in a broad sense, the nibble mode operation can be regarded as the internal address operation. In the internal address operation (or mode), high speed reading and writing of data can be realized compared to the case where the addresses are accessed one by one under control of an externally supplied address signal. Fig. 1 shows operational waveforms illustrating the internal address mode. A row address X (shown in row C of Fig. 1) is written in the memory with the fall of a row address strobe signal RAS (shown in row A of Fig. 1), and subsequently a column address Y (shown in row C of Fig. 1) is written in the memory with the fall of a column address strobe signal CAS (shown in row B of Fig. 1). In this way, an address of the memory is accessed. This accessing operation is the same as in the normal mode. Data D1 (as shown in row D of Fig. 1) is read out from or written in synchronization with operation clocks M in the address determined by the selected row and column addresses X and Y. In the internal address mode, the column address strobe signal CAS is alternately and repeatedly changed to H and L levels (as shown in row B of Fig. 1) while holding the row address strobe signal RAS at L level (as shown in row A of Fig. 1). The column address strobe signal CAS at this time serves as a clock signal. The internal address counter (i.e., internal address generation means) in the memory is incremented or decremented at every fall of the signal. Thus, three addresses following the address specified by the address (X, Y) are accessed, and data D2 to D4 are read out or written in. The period MN before the start of the internal address mode, each access period NN in the internal address mode and the period NM after the end of the internal address mode are referred to as nibble-in cycle, nibble cycle and nibble-out cycle, respectively, and are related as MN > NM > NN. In the operation of reading or writing data D1 in the normal mode, the strobe signals RAS and CAS are used to fall to latch the row and column addresses and, after writing or reading data, to rise to prepare for the next access cycle in a predetermined sequence. In this case, one access operation cycle requires a time MN + NM . Therefore, if these data D1 to D4 are written in or read out in the normal mode, a time period of 4(MN+NM) is required. Thus, the speed of writing or reading data D1 to D4 in the internal address mode is higher than the speed in the normal mode. The memory tester usually has a construction as shown in Fig. 2. A pattern generator 11 successively supplies test patterns to a device under test (DUT) 13 and also supplies expected value patterns DS to a comparator 14. The test patterns to be supplied to the DUT 13, i.e., addresses and, if necessary, write data DW are shaped in a shaper 12 so as to have various desired waveforms, timings and levels before being supplied to the DUT 13. The write data DW is written in the DUT 13, and also a read data pattern DR is read out from the DUT 13 and supplied to the comparator 14. The comparator 14 checks whether the read-out data pattern DR coincides with a correct pattern, i.e., the expected value pattern DS. If the two patterns fail to coincide with each other, a signal representing failure, is written into the corresponding address of a fail memory 15. The pattern generator 11 includes a microinstruction program memory 1 having an instruction code area 1A, an address operation instruction area 1B, a data operation instruction area 1C and a timing data area 1D, all of which are simultaneously accessed with an address specified by the program counter 2. A timing pulse generator 16 receives timing data from the timing data area 1D, and according to the received timing data it produces various timing pulses for controlling the timing of advancing the program counter 2, timing of reading and writing data in and out of the DUT 13, timing of comparison operation of the comparator 14, timing of writing in the fail memory 15, etc. The pattern generator 11 includes the program counter 2, which supplies an access address to the memory 1, a program counter controller 3, an address generator 4 and a data generator 5 in addition to the microinstruction program memory 1. When the address of the program counter 2 is supplied to the microinstruction program memory 1 so that the memory address is accessed, instructions are read out from the various areas in the program memory 1. The program counter 2 is incremented or decremented every time an instruction is read out from the program memory 1. Also, it receives a jump control by the program counter controller 3 according to an instruction code read out from the instruction code area 1A. The address generator 4 operates to generate an address pattern in accordance with an address operation instruction read out from the address operation instruction area 1B. The data generator 5 produces data patterns, i.e., the write data DW and expected value data DS, according to data operation instruction read out from the data operation instruction area 1C. The address data and write data DW provided from the address and data generators 4 and 5, respectively, are supplied to the shaper 12 to be shaped into a selected one of various waveforms for being supplied to the DUT 13 under control of a timing signal from the timing pulse generator 16. The DUT 13 is accessed by the addresses supplied from the address generator 4 for writing and reading data under control of respective write and read pulses supplied from the timing signal generator 16. The read data pattern DR read out from the DUT 13 is supplied to the comparator 14 to be compared to the expected value pattern DS from the data generator 5. If the two compared patterns fail to coincide with each other, a signal representing the failure is written in the same address of the fail memory 15 as the address for the DUT. The operation explained so far is the same as the usual memory test operation. Now, a test of a memory with an internal address function will be described. As mentioned before, the memory with the internal address function has an internal address generation means, which is caused to generate internal addresses by supplying a clock such as to cause alternate and repeated inversion of the row strobe signal RAS to H and L levels while holding an externally applied address unchanged. The internal addresses are successively substituted for predetermined bits of the externally supplied address, whereby high speed address accessing is effected without incrementing externally supplied address. In the tester, the same addresses as those internally generated in the DUT 13 have to be generated because it is necessary to identify the address of the DUT 13, from which data is being read out. That is, the same address as that internally generated in the DUT 13 also has to be externally generated for comparison and accessing to the fail memory 15. Heretofore, operation instructions for generating the same addresses as internal addresses are written in the address operation instruction area 1B, and the same addresses as the internal addresses to be accessed are generated in the periods MN, NN and NM of the internal address mode according to the operation instructions. For example, in order to operate the DUT in a nibble mode starting with an address composed of column and row addresses X and Y, it has been necessary, in the prior art, to prepare and write in the microinstruction program memory 1 a microinstruction program as shown in Fig. 3 for the testing of the DUT 13 in the internal address mode with respect to the address (X, Y). Let it be supposed that the internal address (e.g. column address) is incremented by one, three times to produce four internal addresses, the LSB of the write data DW having been generated from the data generator 5 immediately before entering the internal address mode is "0", and new write data "1", "1", "0" and "1" are to be written in these four addresses in the mentioned order. Also, it is supposed that the timing data TS0 prior to the internal address generation, that is, the nibble-in cycle data is set to TS0 = 100 nsec., the timing data TS1 during each internal address generation, that is, the nibble cycle data is set to TS1 = 29 nsec., and the timing data TS2 subsequent to the internal address generation, that is, the nibble-out cycle data is set to TS2 = 50 nsec. As shown in Fig. 3, all the instruction codes in first to fourth steps (1) to (4) in the internal address mode are NOP instructions. The address operation instruction is as follows. In the first step (1), the column address X is incremented by 1, while the row address Y is incremented by 1 only if there is a carry from X, reaching the start address of the internal address mode. The internal address N of the DUT 13 is set to an initial internal address, e.g. "0,0" which is given by predetermined bits of the start address. In each of the second to fourth steps (2) to (4), the internal address N of the DUT 13 is incremented by 1 according to the column address strobe CAS (i.e., operation clock), i.e., every time data is written in the DUT 13. While, a value N in an internal register (not shown) of the address generator 4 is set to the same value as the initial internal value "0,0", and thereafter the content of the internal register is renewed as expressed by N ← N + 1 in each of the steps (2) to (4). In each of the steps (1) to (4), the value N of the internal register and the start address are combined to produce an address. In this way, the same address as the internally generated address of the DUT 13 is obtained from the address generator 4 and supplied to the fail memory 15. As mentioned before, the least significant bit of the write data immediately before entering the internal address mode is "0", and data "1", "1", "0" and "1" are to be written in the respective first to fourth steps in the internal address mode. Therefore, the instructions in the data operation instruction area 1C are as shown in column 1C in Fig. 3. Here, /D signifies that the input data is provided after being inverted. Since the immediately preceding input data is "0", operation instructions as shown in column 1C of Fig. 3 are obtained. In the first to fourth steps, respective instructions TS0 to TS2 as shown in Fig. 3 are written in the timing data area 1D, according to which timing data 100, 20, 20 and 50 nsec. are obtained in the steps (1) to (4). In the prior art, even in the internal address mode, data is read out from the microinstruction program memory 1 for each internal address generation. This means that it is necessary to produce a microinstruction such as to obtain a desired operation for each internal address generation. This operation is comparatively time-consuming. In addition, since a microinstruction program is produced for every step, considerable time is required for the debugging, i.e., checking as to whether there is no error in the program and correcting an error if any. Further, the microinstruction program memory 1 should have a comparatively large capacity. Furthermore, the significance of the above problems is increased with increase of the steps (internal addresses) in the internal address mode. SUMMARY OF THE INVENTION An object of the invention is to provide a memory test pattern generator, which is capable of performing an internal address mode operation by merely writing a simple one-step microinstruction program so that it requires less microinstruction program memory capacity, and also in which a microinstruction program can be readily written and very simply debugged. According to the invention, an internal address mode code (instruction) as a microinstruction in the internal address mode is written in an instruction code area, an address operation instruction for generating the same address as an initial internal address is written in an address operation instruction area, and if necessary an instruction for generating predetermined data is written in a data operation instruction area. Timing data is not written as any particular microinstruction program of the internal address mode, but it is generated in a timing set controller, that is, it is generated with hardware. Thus, the writing of microinstruction program is extremely simplified. In addition, the timing set controller may have a comparatively simple construction. Further, an internal address generation repeat number is set in a repeat register. When the internal address mode code is read out from the instruction code area and supplied to a repeat controller, whereby the repeat controller generates a release signal, which is supplied to a program counter controller to release the suspension of incrementing a program counter, an inhibition signal for inhibiting the operation of the address and data generators and a timing reference signal is set. The repeat controller includes a counter or the like, which counts operation clock pulses from a timing generator during the internal address mode. When the count reaches the repeat number of the repeat register, the counting operation of the counter is stopped. The inhibition signal, internal address increment control signal and timing reference signal are generated during counting by the counter form the start till a count immediately before the end count of the counter. The release signal is generated at the count immediately before the end count of the counter. The internal address generator is controlled by the internal address increment control signal to generate the same address as the internal address generated by internal address generation means in the tested device. An address multiplexer is controlled according to the internal address mode code signal. In the absence of the internal address mode code signal, the address multiplexer passes therethrough the address from the address generator as it is. In the presence of the internal address mode code signal, the address multiplexer replaces predetermined bits of the address from the address generator with the internal address generated from the internal address generator. In this way, in the internal address mode the same address as accessed in the tested device is obtained from the address multiplexer. A data multiplexer is controlled according to the internal address mode code signal. In the absence of the internal address mode code signal, the data multiplexer passes therethrough the data from the data generator as it is. In the presence of the internal address mode code signal, the data multiplexer selectively passes data, which has been provided immediately previously from the data generator, according to the internal address from the internal address generator. The timing set controller is controlled according to the internal address mode code signal. In the absence of the internal address mode code signal, the timing set controller directly passes therethrough timing data read out from the timing data area ss it is to a timing pulse generator. When the internal address mode code signal is supplied, the timing reference data noted above is delayed, for instance. During a first disagreement period in which the delayed and non-delayed signals disagree with each other, timing data for entering internal address generation is provided. During an agreement period in which they agree with each other, timing data for executing the internal address generation is provided. During a second disagreement period, timing data for getting out the internal address generation is provided. In this way, the timing data can be formed very simply, and there is no need of writing any timing data in any internal address mode step. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a time chart showing an example of the relationship among row and column address strobes, address and write data in an internal address mode in a prior art memory test pattern generator; Fig. 2 is a block diagram showing the prior art memory test pattern generator for a memory with an internal address function; Fig. 3 is a view showing an example of writing data in a microinstruction program memory of the prior art memory test pattern generator for the internal address mode; Fig. 4 is a block diagram showing an embodiment of the memory test pattern generator according to the invention; Fig. 5 is a view showing an example of writing a microinstruction of the memory test pattern generator according to the invention for the internal address mode; Fig. 6 is a circuit diagram showing an example of repeat controller; Fig. 7 is a time chart illustrating an example of control by the repeat controller shown in Fig. 6; and Fig. 8 is a schematic diagram showing an example of timing set controller 26. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT Fig. 4 shows an embodiment of the memory test pattern generator according to the invention. In the Figure, parts like those in Fig. 2 are designated by like reference numerals. According to the invention, a signal (instruction) instructing the internal address mode is stored in the instruction code area 1A. A microinstruction with respect to the internal address mode is written only in a single step as shown in Fig. 5. More specifically, a code IN representing the internal address mode is written in addition to the NOP instruction in the instruction code area 1A. An operation instruction for the internal address N is written in the address operation instruction area 1B in addition to the operation instruction for the column and row addresses X and Y specifying the initial value of the internal address. The previous data immediately before entering the internal address mode may be provided as it is in the data operation instruction area 1C, or a preset fixed data DP may be written in the area 1C. In either case, the data signal includes both the write data DW and expected value data. Nothing is written in the timing data area 1D in the internal address mode. Referring to Fig. 4, according to the invention there are provided a repeat controller 21 for controlling the repeat during the internal address mode, a repeat register 22, in which is stored a number of times internal address generation is to be repeated, an internal address generator 23 for generating the same address as an internal address of the DUT 13, an address multiplexer 24, a data multiplexer 25 and a timing set controller 26. Fig. 6 shows the detailed circuit construction of the repeat controller 21 and repeat register 22. In the repeat register 22, in an initial stage of operation of the tester after the start thereof, an AND gate 31 takes an AND between a signal STRC indicating that the tester has been rendered operative (i.e., that the power switch has been turned on) and an operation clock M, and a resultant output is passed through an OR gate 32 to clock terminals CK of a plurality of D type flip-flops 33. At this time, data DT07 of plural bits which have been prevailing at data terminals D of the flip-flops 33 is set in the flip-flop. The data DT07 represents the number of times of internal address generation to be executed. It is possible to set the data DT07 in the flip-flops 33 according to data CMD from a control computer (not shown) through the OR gate 32 and bus. The repeat controller 21, as shown in Fig. 6, uses a down-counter 34. When a test on the DUT 13 is started, a start clear signal SCL of "1" is supplied through an OR gate 36 to OR gates 37 and 38. Outputs "0" are thus provided from the OR gates 37 and 38 to input terminals S1 and S2 of the down-counter 34, whereby the contents of the repeat register 22 are preset in the down-counter 34. A hold command RCHOLD, which is normally "0", and a signal IN indicating that the prevailing mode is not the internal address mode are fed to an AND gate 39, which normally provides an output "1". Meanwhile, the bit outputs of the counter 34 are wired-ORed, and an all "0" count of the counter 34 is detected by an AND gate 41. To the AND gate 41 is also supplied the signal IN . When the internal address mode is ended so that the count of the counter 34 becomes all "0", the AND gate 41 provides an output "0". The output of the AND gate 41 is also supplied to an AND gate 42. The AND gate 42 takes an AND between this signal and the hold command RCHOLD to provide an output "1". The outputs of the OR gates 37 and 38 thus both become "0" to effect presetting of the counter 34 to be ready for the next internal address mode. The output of the AND gate 41 is also supplied to an AND gate 43, to which is also supplied as the other input an inverted internal address mode signal IN . Thus, an increment of the program counter 2 is caused under control of the operation clock M, shown in Fig. 7, provided from the timing generator shown in Fig. 4. When a count corresponding to an internal address mode address #10 is reached at an instant t₁ as shown in Fig. 7, the internal address mode code IN is read out. If the content of the repeat register 22 is 3, the content RC of the counter 34 has been preset to #3. The code signal IN is "1", while the non-inverted output RCZ of the AND gate 41 is "0". Thus, the inverted output of the AND gate 43 is at high level "1" as shown in Fig. 7. This high level signal yields an inhibition signal INH, a timing reference signal NCNT and an internal address increment control signal EB. The counter 34 is decremented every time an operation clock pulse M is supplied. When the next to the last internal address operation is reached, the non-inverted output of the AND gate 41 goes to a high level, which is applied to the program counter controller 3 as a release signal RCZ to release the suspension of increment of the address counter 2. The release signal RCZ is also supplied to the AND gate 43. Therefore, with the appearance of the release signal RCZ the signals INH, NCNT and EB go to low level (i.e., "0"). That is, the inhibition signal INH, timing reference signal NCNT and internal address increment control signal EB are at high level "1" from the start of the internal address mode (i.e., start of counting of the counter 34) till the next to the last step of the internal address mode. As noted before, when the internal address mode instruction is read out, the internal address mode code IN is supplied to the program counter 2 to stop the increment thereof. At the same time, the code signal IN is supplied to the address multiplexer 24. While the address (X, Y) from the address generator 4 has been provided as it is, predetermined bits of the column address X are now replaced with the internal address from the internal address generator 23 in response to the signal IN applied to the multiplexer 24. Meanwhile, with the appearance of the inhibition signal INH from the repeat controller 21 the address and data generators 4 and 5 are rendered inoperative, while only the internal address mode instruction as shown in Fig. 5 is executed. Thus, the externally supplied addresses X, Y, which constitute a reference internal address, are supplied from the address generator 4 to the address multiplexer 24. Further, an operated or preset data DP is supplied from the data generator 5 to the data multiplexer 25. When the internal address mode is not set, the data multiplexer 25 passes therethrough the data from the data generator 5 as it is. Further, with the address increment control signal EB supplied to it, the internal address generator 23 is rendered from the reset state into an operative state. A result of operation N ← N + 1 is supplied from the address operation instruction area 1B to the internal address generator 23 to increment the address of the internal address generator 23 every time an operation clock pulse M is supplied from the timing generator 16. In this example, the address increment is caused as 0, 1, 2 and 3. The internal address replaces predetermined bits, e.g. the lowest two bits in the column address X of the initially given (X, Y) address provided from the address generator 4. In the DUT 13, after the (X, Y) address has been externally specified, address increment in the internal address generation means is caused from the (X, Y) address under control of the clock (i.e., column address strobe in this example). Thus, the same address as the internal address is obtained in the external circuit. In the internal address mode, the internal addresses 0, 1, 2 and 3 from the internal address generator 23 are also supplied as control signal to the data multiplexer 25, and data pattern DP, e.g., "1101" supplied from the data generator 5 in parallel is provided bit by bit in series as write data to the DUT 13 in synchronism with the internal addresses. The timing reference signal NCNT from the repeat controller 21 is supplied to the timing set controller 26. The timing set controller 26 has a construction as shown in Fig. 8. As is shown, the timing reference signal NCNT is supplied to a delay circuit 51 and AND gates 52 and 53. Also, the NCNT signal is supplied to an inverted input of an AND gate 54. The output of the delay circuit 51 is supplied to the AND gate 52, and also supplied to an inverted input of the AND gate 53. The outputs of the AND gates 53, 52 and 54 are supplied to respective encoders 55 to 57 which produce the respective timing data TS0 to TS2; as described before in connection with Fig. 3. The delay time of the delay circuit 51 is set to 100 nsec. in the above example. In this case, the periods of the data TS0 and TS2 are not equal. The data TS0, TS1 and TS2 are supplied through an OR gate 58 to the multiplexer 59. The multiplexer 59 switches the output of the OR gate 58 and timing data from the timing data area 1D according to the internal address mode code signal IN. It will be seen that the operation clock is generated with the corresponding timings. In the internal address mode, an internal address is given as two bits. For example, when bits X₇ and X₈ of 9-bit column address X₀ to X₈ are "0, 0" as an initial internal address, increment of the internal address "X₇, X₈" in the DUT 13 is caused in the order of "0, 1", "1, 0" and "1, 1". The internal address generator 23 generates the same address as the internal address generated in the DUT 13 and supplies it to the address multiplexer 24. The address multiplexer 24 allots the 2-bit internal address generated from the internal address generator 23 to the bits X₇ and X₈ of the 9-bit column address X₀ to X₈ to form a complete address (X, Y), so that the complete address (X, Y) is supplied to the fail memory 15. As explained before, the data multiplexer 25 supplies data generated from the data generator 5 bit by bit to the DUT 13 according to the internal address generated in the internal address generator 23 and provided as control signal. When the count of the counter 34 becomes 0, the resultant signal RCZ is supplied to the program counter controller 3 to release the hold state of the program counter 2. As a result, the normal mode of the pattern generator 11 is restored. When the signal IN representing the internal address mode is read out again in the normal mode, the program counter controller 3 renders the program counter 2 to be in the hold state, that is, the internal address mode is set again. As has been described in the foregoing, according to the invention the signal IN representing the internal address mode is stored in the instruction code area 1A, and the data representing the number of times of internal address generation is stored in the repeat register 22. Thus, the counter 34 can hold the program counter 2 and also control the address and data generators 4 and 5 to the inhibition state. Further, the timing set controller 28 generates the timing data TS0, TS1 and TS2 at the time of the internal address mode. Thus, unlike the prior art system where all the instructions necessary for the internal address generation are read out from the microinstruction program memory 1, according to the invention an IC memory which has an internal address function can be tested without need of describing the setting of internal address data operation instructions and timing set on the microprogram for every MN, NN and NM timing data cycle but by merely writing a single step instruction with respect to the internal address mode. This writing of data is very easy, and also its debugging is very simple. It is thus possible to reduce the period of development of a program for operating the tester and also reduce the program capacity. When more than four cycles of the internal address operation become necessary, this demand can be readily met by increasing the bit-size of each of the repeat register 22, counter 34 and internal address generator 23. Further, the counter 34 is required to count only up to the repeat number preset in the repeat register 22. It is possible to use an up-counter in lieu of the down-counter for comparison of the count to the content of the register 22.

Claims: A memory test pattern generator for generating a test pattern for a memory under test (DUT), which has internal address generating means and is capable of address accessing by merely supplying a clock, comprising: a microinstruction program memory (11) including an instruction code area (1A), an address operation instruction area (1B), a data operation instruction area (1C) and a timing data area (1D); a program counter (2) for generating an address of said microinstruction program memory from which to read out data; a program counter controller (3) for controlling said program counter (2) according to an instruction code read out from said instruction code area; an address generator (4) for generating an address according to an address operation instruction read out and supplied from said address operation instruction area; a data generator (5) for generating a write data (DW) and an expected value data (DR) according to a data operation instruction read out and supplied from said data operation instruction area; and a timing pulse generator (16) for generating timing pulses according to timing data (TS) read out and supplied from said timing data area; CHARACTERIZED BY: the provision of an internal address mode code (IN) as a microinstruction in said instruction code area (1A), said program counter controller (3) stopping the increment of said program counter (2) when said internal address mode code (IN) is read out a repeat register (22) for setting the number of times the internal address generation is repeated; a repeat controller (21) connected to said repeat register (22) for generating an internal address increment control signal (EB), a release signal (RCZ) to be supplied to said program counter controller (3) for releasing the suspension of increment of said program counter (2), an inhibition signal (INH) for inhibiting the operation of said address generator (4) and data generator (5) and a timing reference signal (NCNT) when said internal address mode code (IN) is read out and supplied; an internal address generator (23) for generating the same internal address as an internal address generated in said memory under test under control of said internal address increment control signal (EB); an address multiplexer (24) normally producing an address from said address generator (4) and, when said internal address mode code (IN) is read out and supplied, producing a synthesized output of an address provided from said address generator (4) and an address provided from said internal address generator (23) replacing predetermined bits of said address from said address generator (4); a data multiplexer (25) normally producing a data from said data generator (5) and, when said internal address mode code (IN) is read out and supplied, selectively providing the prevailing data from said data generator (5) according to an internal address from said internal address generator (23); and timing set controller (26) normally supplying timing data (TS) from said timing data area and, when said internal address mode code (IN) is read out and supplied, producing timing data from said timing reference signal (NCNT) and supplying said timing data (TS) to said pulse generator (16). The memory test pattern generator according to claim 1, wherein said timing set controller generates, in said internal address mode, timing data representing an instant when said internal address mode sets in, timing data representing an internal address generation period shorter than the period until said internal address mode sets in and timing data representing an instant of end of said internal address mode. The memory test pattern generator according to claim 2, wherein said timing set controller delays said timing reference signal for a period until said internal address mode sets in and provides said timing data representing an instant when said internal address mode sets in during a first period of absence of agreement between said delayed and non-delayed signals, said timing data representing an internal address generation period during the period of presence of agreement between said delayed and non-delayed signals, and said timing data representing an instant of end of said internal address mode during a last period of absence of agreement between said delayed and non-delayed signals. The memory test pattern generator according to claim 2, wherein said repeat controller includes a counter for counting operating clock pulses from said timing pulse generator while said internal address mode code is read out and supplied, means for stopping the counting of said counter when the count thereof reaches a repeat number set in said repeat register, signal generating means for generating said inhibition signal, said internal address increment control signal and said timing reference signal during a period from the start to second to the end of the counting of said counter, and means for generating said release signal at the second to end of the counting of said counter. The memory test pattern generator according to claim 4, wherein said counter is a down-counter, the repeat number of said repeat register is preset in said counter at the start of a test, said release signal is provided when the count of said counter becomes zero, said repeat controller generates said inhibition signal, said address increment control signal and said timing reference signal from said read-out internal address mode code and said release signal, and said counter is preset when the count thereof becomes zero. The memory test pattern generator according to claim 2, wherein said internal address generator generates said internal address by receiving a signal for rendering it operative and an internal address increment instruction in an address operation instruction in a microinstruction containing said code representing said internal address mode. The memory test pattern generator according to claim 6, wherein said signal for rendering said internal address generator operative, said inhibition signal and said timing reference signal are derived from the same signal.

Inventors: IMADA, HIDEAKI
Applicants: ADVANTEST CORPORATION
Application year: 1986
Main classification: G11C29
IPC codes: G11C29, G01R31