METHOD OF PRODUCING SILICON NITRIDE POWDERS

Abstract: A method of producing silicon nitride powders having a high α-Si₃N₄ content and a fine and uniform particle size is disclosed, which comprises mixing SiO powder with C powder and, if necessary, Si powder and/or Si₃N₄ powder, and then firing at 1,400-1,800°C in a nitriding atmosphere having N₂ partial pressure of not less than 2 atmospheric pressures.

Description: METHOD OF PRODUCING SILICON NITRIDE POWDERS This invention relates to a method of producing silicon nitride powder, and more particularly to a method of producing high purity silicon nitride powders having a high content of a-type silicon nitride (hereinafter referred to as a-SisN43 and a fine and uniform particle size. Although there are a-type and ss-type silicon nitrides, since sintered bodies using a-SisN4 as a starting material are excellent in the high-temperature strength and heat resistance, the use of a-SisN4 powder is largely expected as a starting material for structural ceramics used at high temperatures. When so-called SiaN4 ceramics are used as a structural material, the sintering properties of such ceramics are strongly dependent upon the purity, particle size and so on of the starting powder. Therefore, it is important to produce high quality a-SiaN4 powders having a slight impurity content and a fine and uniform particle size. As a method of producing such silicon nitride powders (synthetic method), there are known the following four methods (1)-(4): (1) Nitridation method of heating metallic silicon in N2 according to the following equation of reaction in a nitrogen atmosphere for a long time: 3Si + 2N2 # Si3N4 (2) Chemical vapor deposition method of reacting silicon tetrachioride or silane with ammonia according to the following equation of reaction: 3SiCl4 + NH3 # Si3N4 + 12HCl (3) Method of reducing SiO2 in N2 with an approximately stoichiometric amount of carbon and reacting the resulting SiO according to the following equation of reaction: 3Si02 + 6C + 2N2 + Si3N4 T 6CO ; and (4) A so-called imide decomposition method, wherein a solution of SiCg4 in an organic solvent is reacted with a liquefied ammonia to form a silicon diimide (Si(NH)2) and then the latter is heat treated to form SiaN4 according to the following equation of reaction: SiCl4 + 6NH3 # Si(NH)2 + 4NH4Cl, 3Si(NH)2 # Si3N4 + 2NH3. In the method (1) among the above methods, the nitridation of Si in N2 is exothermic, so that it is required to take a fair means in the process for the control of heat generation. For instance, Si powder is necessary to be selected from relatively coarse grains, and the pulverizing must be performed after the nitridation. In this case, there is caused a problem that the contamination can not be avoided. The method (2) is suitable for covering a surface of a semiconductor element, but is unsuitable as an industrially mass production method of producing starting powders for engineering ceramic materials. In the method (3), it is necessary to use sufficiently purified silicon dioxide powder and carbon powder as starting materials. On the other hand, the resulting product inapt to form a mixture of a-Si2N4, p-Si3Nu, silicon oxynitride (Si2ON2) and SiC. Therefore, this method has a disadvantage that the yield of a-SisN, is low. The imide decomposition method (4) can provide high purity Si3N4 powder, but can not be said to be essentially an economical method owing to the use of expensive SiCl4. As a countermeasure for overcoming the problems of the above well-known methods, there are known some techniques as disclosed in Japanese Patent laid open Nos. 53-102,300, 59-13,611 and 59-50,006. However, these techniques have also the following problems to be solved. That is, Japanese Patent laid open No. 53-102,300 discloses a method wherein an excessive amount of C is used together with a given amount of Si3N4 powder. However, the mean particle size of the resulting Si3N4 powder is within a range of 1-1.7 pm, which is very unsuitable for the production of fine silicon nitride powder effective for improving the sintering properties of the sintered body. In Japanese Patent laid open No. 59-13,611 is disclosed a method wherein a so-called amorphous SiO is heat treated in a reduction nitriding atmosphere to form ultrafine Si3N4 powder. Even if the heat treatment is merely performed in the reduction nitriding atmosphere, however, the nitridation is actually incomplete, so that the resulting Sign4 powder contains Si2 ON2 and the like as an impurity and hence the high quality Si3N4 powder can not be obtained in a higher yield. Moreover, Japanese Patent laid open No. 59-50,006 discloses a method wherein a mixture of SiO powder, C powder and Si powder is heated in a nitrogen containing atmosphere to perform the reduction nitriding. In this case, however, the resulting Si3N4 powder contains coarse Si3N4 produced by direct nitriding of Si powder due to the use of Si powder having a mean particle size of not more than 10 ijm. It is, therefore, an object of the invention to solve the aforementioned problems of the conventional techniques. The inventors have made various studies on the above problems and found that high quality silicon nitride powder having a high concentration of fine a-SI3N4 powder and containing no SiC and Si2ON2 can be obtained in a high yield by mixing fine silicon monoxide (SiO) powder with a carbonaceous material and, if necessary, Si powder and/or Si3N4 powder and then firing the resulting mixture in a nitriding atmosphere such as a mixed gas of N2 and inert gas, and so on. According to the invention, there is the provision of a method of producing silicon nitride powders, which comprises mixing SiO powder with a carbonaceous material and then firing the resulting mixture at a temperature of 1,400-1,8000C in a nitriding atmosphere having a partial nitrogen pressure of not less than 2 atmospheric pressures. In a preferred embodiment of the invention, the mixture has a molar ratio of C/SiO of 0.7-2.0. In another preferred embodiment of the invention, the mixture further contains Si powder and/or Siam4 powder. In the other preferred embodiment of the invention, the mixture is shaped into a molded body having a bulk density of not more than 0.85 g/cm3 prior to the firing, because in order to efficiently obtain SisN4 powder in mass production, the use of the molded body is more desirable than the use of the powdery mixture in view of the handling easiness, easy control of nitriding reaction and the like. The invention will be described with reference to the accompanying drawings, wherein: A single figure is a diagram illustrating an equilibrium between Siam4 and SiC about temperature and partial nitrogen pressure. The invention will be described in detail below. As SiO powder to be used in the invention, mention may be made of SiO powder used as a starting material for the fdrmation of deposited films in an electronics field, amorphous SiO ultrafine powder having a particle size of not more than 1 pm and the like. In order to obtain SisN4 fine powder, it is desirable that SiO powder as the starting material is made finer. Such SiO powders are obtained as a hightemperature reaction product in a reaction system such as SlO2 -C system, SiO2-Si system or the like. In this case, when SiO vapor produced at the high temperature is quenched to deposit without causing disproportionation (2SiO+SisSiO2), the resulting SiO powder is confirmed to be amorphous by an X-ray diffractometry. Further, since the SiO powder is obtained through the vapor phase, it is very fine and the surface thereof is rich in the activity. In some cases, therefore, the surface of the SiO powder may be oxidized or nitrided by reacting with oxygen or nitrogen in air. According to the invention, SiO ultrafine powder ( < 0.1 pm) obtained by condensation of SiO vapor by-produced in the production of zirconia from zircon powder and carbon material may also be used as SiO powder. The reason on the use of SiO powder in the invention is as follows. SiO vapor produced by a silica reduction process of the following reaction formula (I) is reacted as an intermediate with C in N2 atmosphere according to the following reaction formula (2) to obtain Siam4: SiO2 + C y SiO + CO ,,--- (1) 3SiO + 2N2 + 3C + Si3N4 + 3CO ..... (2). In the above reactions, i.e. carbothermic reduction of SiO2 in N2, SiO2 is poor in the reaction activity as compared with SiO powder and softens in the course of the heating, which obstructs not only the flowing of SiO vapor obtained by the reaction formula (1) but also the flowing of atmosphere gas (particularly N2 gas) and the dispersing of CO (gas) generated to reduce partial pressures of SiO and N2 in the starting materials and lower the yield of Siam4. Furthermore, 13-SiC, Si2ON2 and the like are apt to be inevitably produced. On the contrary, when C powder is added to SiO powder in an amount corresponding to the approximately stoichiometric amount of the reaction formula (2), preferably an amount slightly larger than the stoichiometric amount, the partial pressure of 02 in the reaction vessel can sufficiently be reduced to control the amount of SiO2 produced according to the following reaction formula (3): SiO + 1/202 + SiO2 ..... (3) Therefore, SiO powder easily changes into SiO vapor to promote the reaction formula (2). According to the invention, the carbonaceous material is not particularly restricted, but it is desirable that the uniform mixed state with SiO powder is attained and the amount of impurities is less. For example, petroleum coke and pitch having a less ash content, coal pitch, carbon black, various organic resins and the like are suitable as the carbonaceous material. In the mixture of SiO powder and carbonaceous material according to the invention, a molar ratio of C/SiO is within a range of 0.7-2.0, preferably 1.0-1.5 for increasing the yield of a-Si3N4 powder. When the molar ratio of C/SiO is less than 0.7, a large amount of Si2 ON2 is produced with the production of SiO2 to decrease the amount of a-Si3N4 powder produced. While, when the molar ratio exceeds 2.0, the formation of SiC is recognized and the amount of ss-Si3N4 produced increases, and finally the yield of a-Si3N4 reduces. According to the invention, as the molar ratio of C/SO in the mixture approaches to the upper limit, carbon may remains in the product after the firing. In this case, the remaining carbon can be removed by further firing in an oxidizing atmosphere. The firing temperature in the oxidizing atmosphere is not higher than 9000C, preferably not higher than 6000C for preventing the oxidation of the resulting silicon nitride powder. In order to further increase the yield of a-SiaN4, according to the invention, the mixture of SiO powder and C powder may contain Si3N4 powder and/or Si powder. At first, Si3N4 powder is desirable to have a high purity and be uniform. Further, in order to increase the ratio of a-Si3N4 in the product, it is favorable that a-type Si3N4 powder is mainly added to the mixture. When a-Si3N4 powder is added to the mixture of SiO powder and C powder, the addition amount is preferably 100 parts by weight based on 100 parts by weight of the mixture at maximum. When the addition amount exceeds 100 parts by weight, the addition effect is saturated and the economical merit is lost. Then, when Si powder is added to the mixture of SiO powder and C powder, the addition amount is preferably 20 parts by weight based on 100 parts by weight of the mixture at maximum. When the addition amount exceeds 20 parts by weight, the addition effect is saturated and the economical merit is lost. The Si powder to be used has a mean particle size of not more than 1 pm, preferably not more than 0.5 pm. When the particle size is too large, the direct nitriding of Si into Siam4 is incomplete, and the particle size of Sign4 produced by the direct nitriding becomes large, and consequently coarse Si8N4 powder is incorporated into the desired SiaN4 powder to make the mean particle size thereof large. According to the invention, the aforementioned powdery mixture is directly subjected to a subsequent firing step. In this case however, if the layer of the powdery mixture is fired at a thickness of, for example, about 20 mm for mass production, there is caused a fear that the flowing of N2 inside the layer and the dispersing of CO generated at the formation of Si3N4 are obstructed and the partial pressure of N2 hardly rises to produce SiC, Si2ON2 and so on. Therefore, it is desirable that the powdery mixture is previously shaped into a molded body having a bulk density of not more than 0.85 g/cm3, preferably 0.3-0.65 g/cm3 prior to the firing. The formation of the molded body is industrially suitable because Si3N4 fine powder can easily be obtained in mass production. The reason why the bulk density of the molded body is limited to not more than 0.85 g/cm3 is due to the fact that when the bulk density exceeds 0.85 g/cm3, the partial pressure of N2 inside the molded body is not sufficiently raised in the nitriding reaction of SiO to Si3N4 according to the formula (2) and consequently Si2ON2, SiC and the like are coexistent in the resulting product. When the bulk density of the molded body made from SiO-C powdery mixture is not more than 0.85 g/cm3, this molded body is porous, and pores are existent even in the interior of the molded body. As a result when this molded body is fired in the nitriding atmosphere, CO gas produced is easily dispersed from the pores to the outside of the reaction system, while N2 gas invates into the pores to promote the nitriding reaction. That is, N2 gas is continuously supplied to the pores without raising the partial pressure of CO, so that the reaction of the formula (2) is easily promoted to reduce and nitride SiO in the molded body. Further, since the reaction of the formula (2) occurs in such micropores at vapor phase, the rising of supersaturation degree can be expected to obtain Si3N4 fine powder as compared with the case of using the powdery mixture. On the other hand, when the bulk density exceeds 0.85 g/cm3, the gas exchange between CO and N2 in the pores of the molded body is not smoothly performed, so that the rising of CO partial pressure and the reduction of N2 partial pressure are caused in the molded body, and consequently the promotion of reaction formula (2) is difficult and the formation of Si2ON2, SiC and the like is caused. As a means for mixing the starting powders to form a powdery mixture, mention may be made of wet-type and dry-type ball mills. According to the invention, the granulation of the powdery mixture into a molded body may be performed by granulating the powders with water, alcohol, acetone or the like and then drying them, or by granulating the powders with an organic binder- such as polyvinyl alcohol resin and the like or an inorganic binder such as colloidal silica, silane coupling agent or the like and then drying them. As a means for such a granulation, use may be made of an extrusion molding machine, a briquette machine, a molding machine and so on. According to the invention, the powdery mixture or the molded body made therefrom is fired at a temperature of 1,400-1,8000C in a nitriding atmosphere having a partial nitrogen atmosphere of not less than 2 atmospheric pressures. The reason why the firing temperature is limited to a range of 1,400-1,8000C is based on the fact that when the firing temperature is less than 1,4000C, the formation of Si3N4 is difficult and the formation of Si2ON2 and SiO2 is easy, while when it exceeds 1,8000C, the formation of ss-SiSN4 increases to reduce the yield of the desired a-SisN4 powder and the formation of SiC is observed in case of using a large amount of C. As the nitriding gas, use may be made of any gas atmosphere capable of generating N2 through thermal decomposition, such as N2 gas, N2+H2 gas, N2+Ar gas, NHa gas and so on. According to the invention, the partial 'nitrogen pressure in the nitriding atmosphere is held at not less than 2 atmospheric pressures, preferably 3-10 atmospheric pressures. When the N2 partial pressure is less than 2 atmospheric pressures, the amount of SiC produced becomes larger, the tendency of which is particularly conspicuous at a lower firing temperature, and consequently the yield of Siam4 decreases. The effect of such an N2 partial pressure is considered as follows. That is, the following reaction formula (4) is considered to be led from the reaction equilibrium between SiC and Sign4 in N2 atmosphere: 3SiC + 2N2 + Si3N4 + 3C ..... (4) The results as shown in the single figure are obtained from the above reaction formula by regulating the stable regions of SiC and Sign4 through temperature and N2 partial pressure. It is apparent from the single figure that Si3N4 is stable as the N2 partial pressure becomes higher. Particularly, it is obvious that when the N2 partial pressure is held above 2 atmospheric pressures in the above stable region, Siam4 is more advantageously produced. The following examples are given in illustration of the invention and are not intended as limitations thereof. Examples 1-14, Comparative Examples 1-4 SiO powder having a mean particle size of 0.2 pm was uniformly mixed with carbon black (made by Tokai Carbon K.K, trade name of Seast V) at a mixing ratio or molar ratio (C/SiO) shown in the following Table 1. The resulting powdery mixture was lightly filled in a crucible and then fired at a temperature of 1,200-2,0000C in N2 atmosphere having N2 partial pressure of 0.5-10 atmospheric pressures for 2 hours. The crystal phase, yield of Si3N4 and ratio of a-formation (a-Si3N4) in the resulting product were measured by a powdery X-ray diffractometry, and also the particle size of silicon nitride powder was measured by a micro track method to obtain results shown in Table 1. Then, the product of Example 6 was subjected to an oxidation treatment by heating in air at 500-9000C for -2 hours. The contents (wt%) of C and 0 as an impurity were measured before and after the oxidation treatment to obtain results as shown in the following Table 2. Table 1(a) EMI15.1 C/SiO <SEP> molar <SEP> Yield <tb> N2 <SEP> partial <SEP> Temper- <SEP> Ratio <SEP> of <SEP> Particle <tb> ratio <SEP> Crystal <SEP> phase <SEP> of <tb> No. <SEP> pressure <SEP> ature <SEP> &alpha;-formation <SEP> size <tb> powdery <SEP> in <SEP> product <SEP> Si3N4 <tb> (atm) <SEP> ( C) <SEP> (%) <SEP> ( m) <tb> mixture <SEP> (%) <tb> Example <SEP> 1 <SEP> 1.5 <SEP> 2 <SEP> 1,400 <SEP> Si3N4 <SEP> 94 <SEP> 90 <SEP> 0.9 <tb> " <SEP> 2 <SEP> 1.5 <SEP> 2 <SEP> 1,600 <SEP> Si3N4 <SEP> 94 <SEP> 87 <SEP> 1.1 <tb> " <SEP> 3 <SEP> 1.5 <SEP> 4 <SEP> 1,800 <SEP> Si3N4 <SEP> 93 <SEP> 85 <SEP> 1.1 <tb> " <SEP> 4 <SEP> 0.7 <SEP> 4 <SEP> 1,500 <SEP> Si3N4, <SEP> Si2ON2 <SEP> 92 <SEP> 90 <SEP> 0.9 <tb> " <SEP> 5 <SEP> 1.0 <SEP> 6 <SEP> 1,500 <SEP> Si3N4, <SEP> si2ON2 <SEP> 94 <SEP> 88 <SEP> 0.8 <tb> " <SEP> 6 <SEP> 1.3 <SEP> 6 <SEP> 1,500 <SEP> Si3N4 <SEP> 93 <SEP> 88 <SEP> 1.0 <tb> " <SEP> 7 <SEP> 1.8 <SEP> 6 <SEP> 1,500 <SEP> Si3N4 <SEP> 93 <SEP> 85 <SEP> 0.9 <tb> " <SEP> 8 <SEP> 2.0 <SEP> 5 <SEP> 1,500 <SEP> Si3N4, <SEP> SiC <SEP> 92 <SEP> 85 <SEP> 1.0 <tb> " <SEP> 9 <SEP> 1.5 <SEP> 2 <SEP> 1,600 <SEP> Si3N4 <SEP> 93 <SEP> 88 <SEP> 1.2 <tb> " <SEP> 10 <SEP> 1.5 <SEP> 5 <SEP> 1,600 <SEP> Si3N4 <SEP> 97 <SEP> 87 <SEP> 1.0 <tb> " <SEP> 11 <SEP> 1.5 <SEP> 10 <SEP> 1,600 <SEP> Si3N4 <SEP> 96 <SEP> 88 <SEP> 1.2 <tb> " <SEP> 12 <SEP> 1.5 <SEP> 5 <SEP> 1,600 <SEP> Si3N4 <SEP> 91 <SEP> 88 <SEP> 1.2 <tb> " <SEP> 13 <SEP> 1.5 <SEP> 5 <SEP> 1,600 <SEP> Si3N4 <SEP> 91 <SEP> 90 <SEP> 1.0 <tb> " <SEP> 14 <SEP> 1.5 <SEP> 5 <SEP> 1,600 <SEP> Si3N4 <SEP> 95 <SEP> 95 <SEP> 1.1 <tb> Table 1(b) EMI16.1 C/SiO <SEP> molar <SEP> Yield <tb> N2 <SEP> partial <SEP> Temper- <SEP> Ratio <SEP> of <SEP> Particle <tb> ratio <SEP> in <SEP> Crystal <SEP> phase <SEP> of <tb> No. <SEP> pressure <SEP> ature <SEP> &alpha;-formation <SEP> size <tb> powdery <SEP> in <SEP> product <SEP> Si3N4 <tb> (atm) <SEP> ( C) <SEP> (%) <SEP> ( m) <tb> mixture <SEP> (%) <tb> Compar Si3N4, <SEP> Si2ON2, <tb> tive <SEP> 1.5 <SEP> 0.3 <SEP> 1,200 <SEP> 62 <SEP> 50 <SEP> 0.9 <tb> SiC <tb> Example <SEP> 1 <tb> " <SEP> 2 <SEP> 1.5 <SEP> 0.6 <SEP> 2,000 <SEP> Si3N4, <SEP> SiC <SEP> 72 <SEP> 75 <SEP> 4.5 <tb> " <SEP> 3 <SEP> 0.5 <SEP> 5 <SEP> 1,500 <SEP> Si3N4, <SEP> Si2ON2 <SEP> 40 <SEP> 65 <SEP> 0.9 <tb> " <SEP> 4 <SEP> 2.2 <SEP> 5 <SEP> 1,500 <SEP> Si3N4, <SEP> SiC <SEP> 58 <SEP> 40 <SEP> 1.0 <tb> Table 2 EMI17.1 <tb> <SEP> Before <SEP> After <tb> Oxidation <SEP> oxidation <SEP> oxidation <tb> temperature <tb> <SEP> ( C) <SEP> C <SEP> O <SEP> C <SEP> O <tb> <SEP> (wt%) <SEP> (wt%) <SEP> (wt%) <SEP> (wt%) <tb> <SEP> 500 <SEP> 0.14 <SEP> 0.9 <SEP> 0.09 <SEP> 1.0 <tb> <SEP> 700 <SEP> 0.14 <SEP> 0.9 <SEP> 0.08 <SEP> 1.2 <tb> <SEP> 900 <SEP> 0.14 <SEP> 0.9 <SEP> 0.08 <SEP> 2.2 <tb> Examples 15-33, Comparative Examples 5 and 6 SiO powder having a mean particle size of 0.2 m was uniformly mixed with carbon black and SiaN4 powder having a ratio of a-formation of 90% at a mixing ratio as shown in the following Table 3. The resulting powdery mixture was lightly filled in a crucible and then fired at 1,200-2,0000C in N2 atmosphere having N2 partial pressure of 0.5-10 atmospheric pressures for 2 hours. The crystal phase, yield of SiaN4, ratio of a-formation and particles size of SiaN4 in the resulting product were measured in the same manner as in Example 1 to obtain results as shown in Table 3. Then, the product of Example 16 was oxidized by heating in air at 500-1,0000C for 2 hours. The C and O contents before and after the oxidation are shown in the following Table 4. Table 3(a) EMI18.1 Mixing <SEP> ratio <SEP> of <tb> Yield <SEP> Ratio <tb> starting <SEP> powders <SEP> N2 <SEP> Temper- <SEP> Particle <tb> Crystal <SEP> phase <SEP> of <SEP> of <SEP> &alpha; No. <SEP> pressure <SEP> ature <SEP> size <tb> in <SEP> product <SEP> Si3N4 <SEP> formation <tb> *1 <SEP> *2 <SEP> (atm) <SEP> ( C) <SEP> ( m) <tb> (%) <SEP> (%) <tb> C/SiO <SEP> Si3N4 <tb> Example <SEP> 15 <SEP> 1.5 <SEP> 15 <SEP> 5 <SEP> 1,400 <SEP> Si3N4 <SEP> 97 <SEP> 90 <SEP> 0.9 <tb> " <SEP> 16 <SEP> 1.5 <SEP> 15 <SEP> 5 <SEP> 1,600 <SEP> Si3N4 <SEP> 98 <SEP> 87 <SEP> 1.5 <tb> " <SEP> 17 <SEP> 1.5 <SEP> 15 <SEP> 5 <SEP> 1,800 <SEP> Si3N4 <SEP> 97 <SEP> 85 <SEP> 2+3 <tb> " <SEP> 18 <SEP> 0.7 <SEP> 15 <SEP> 3 <SEP> 1,500 <SEP> Si3N4, <SEP> Si2ON2 <SEP> 95 <SEP> 90 <SEP> 0.9 <tb> " <SEP> 19 <SEP> 1.0 <SEP> 15 <SEP> 6 <SEP> 1,500 <SEP> Si3N4, <SEP> Si2ON2 <SEP> 98 <SEP> 88 <SEP> 0.8 <tb> " <SEP> 20 <SEP> 1.3 <SEP> 15 <SEP> 5 <SEP> 1,500 <SEP> Si3N4 <SEP> 97 <SEP> 88 <SEP> 1.0 <tb> " <SEP> 21 <SEP> 1.8 <SEP> 15 <SEP> 5 <SEP> 1,500 <SEP> Si3N4 <SEP> 97 <SEP> 85 <SEP> 1.0 <tb> " <SEP> 22 <SEP> 2.0 <SEP> 15 <SEP> 7 <SEP> 1,500 <SEP> Si3N4, <SEP> SiC <SEP> 96 <SEP> 85 <SEP> 1.0 <tb> " <SEP> 23 <SEP> 1.5 <SEP> 15 <SEP> 2 <SEP> 1,600 <SEP> SI3N4 <SEP> 96 <SEP> 88 <SEP> 1.3 <tb> " <SEP> 24 <SEP> 1.5 <SEP> 15 <SEP> 5 <SEP> 1,600 <SEP> Si3N4 <SEP> 98 <SEP> 89 <SEP> 1.3 <tb> " <SEP> 25 <SEP> 1.5 <SEP> 15 <SEP> 10 <SEP> 1,600 <SEP> Si3N4 <SEP> 99 <SEP> 88 <SEP> 1.3 <tb> " <SEP> 26 <SEP> 1.2 <SEP> 0.1 <SEP> 5 <SEP> 1,600 <SEP> Si3N4 <SEP> 95 <SEP> 88 <SEP> 1.3 <tb> " <SEP> 27 <SEP> 1.5 <SEP> 1 <SEP> 5 <SEP> 1,600 <SEP> Si3N4 <SEP> 96 <SEP> 90 <SEP> 1.3 <tb> Table 3(b) EMI19.1 Mixing <SEP> ratio <SEP> of <tb> Yield <SEP> Ratio <tb> starting <SEP> powders <SEP> N2 <SEP> partial <SEP> Temper- <SEP> Particle <tb> No. <SEP> Crystal <SEP> phase <SEP> of <SEP> of <SEP> &alpha; No. <SEP> pressure <SEP> ature <SEP> size <tb> in <SEP> product <SEP> Si3N4 <SEP> formation <tb> *1 <SEP> *2 <SEP> (atm) <SEP> ( C) <SEP> ( m) <tb> (%) <SEP> (%) <tb> C/SiO <SEP> Si3N4 <tb> Example <SEP> 28 <SEP> 1.5 <SEP> 20 <SEP> 5 <SEP> 1,600 <SEP> Si3N4 <SEP> 99 <SEP> 95 <SEP> 1.2 <tb> *3 <tb> " <SEP> 29 <SEP> 1.5 <SEP> 15 <SEP> 5 <SEP> 1,600 <SEP> Si3N4 <SEP> 96 <SEP> 84 <SEP> 0.9 <tb> *4 <tb> " <SEP> 30 <SEP> 1.5 <SEP> 15 <SEP> 5 <SEP> 1,600 <SEP> Si4N4 <SEP> 95 <SEP> 88 <SEP> 1.0 <tb> " <SEP> 31 <SEP> 0.5 <SEP> 15 <SEP> 3 <SEP> 1,500 <SEP> Si3N4, <SEP> Si3N4, <SEP> Si2ON2 <SEP> 84 <SEP> 65 <SEP> 0.9 <tb> " <SEP> 32 <SEP> 2.0 <SEP> 15 <SEP> 5 <SEP> 1,500 <SEP> Si3N4, <SEP> SiC <SEP> 83 <SEP> 40 <SEP> 1.0 <tb> " <SEP> 33 <SEP> 1.5 <SEP> 15 <SEP> 7 <SEP> 1,500 <SEP> Si3N4, <SEP> SiC <SEP> 90 <SEP> 82 <SEP> 1.0 <tb> Compar Si3N4, <SEP> Si2ON2 <tb> ative <SEP> 1.5 <SEP> 15 <SEP> 0.3 <SEP> 1,200 <SEP> 50 <SEP> 50 <SEP> 0.9 <tb> SiC, <SEP> SiO2 <tb> Example <SEP> 5 <tb> " <SEP> 6 <SEP> 1.5 <SEP> 15 <SEP> 0.6 <SEP> 2,000 <SEP> Si3N4, <SEP> SiC <SEP> 65 <SEP> 75 <SEP> 4.5 <tb> *1 : C/SiO ... molar ratio of C/SiO in powdery mixture *2 : Si3N4 ... parts by weight based on 100 parts by weight of SiO+C mixture *3 : atmosphere gas N2 + H2 (70% + 30%) *4 : atmosphere gas N2 + Ar (70% + 30%) Table 4 EMI20.1 <tb> <SEP> Before <SEP> After <tb> Oxidation <SEP> oxidation <SEP> oxidation <tb> temperature <tb> <SEP> ( C) <SEP> C <SEP> O <SEP> C <SEP> O <SEP> <tb> <SEP> (wt%) <SEP> (wt%) <SEP> (wt%) <SEP> (wt%) <tb> <SEP> 500 <SEP> 0.15 <SEP> 0.9 <SEP> 0.09 <SEP> 1.0 <tb> <SEP> 700 <SEP> 0.15 <SEP> 0.9 <SEP> 0.08 <SEP> 1.2 <tb> <SEP> 1,000 <SEP> 0.15 <SEP> 0.9 <SEP> 0.08 <SEP> 2.3 <tb> Examples 34-46, Comparative Examples 7-11 SiO powder having a mean particle size of 0.2 pm was uniformly mixed with carbon black and Si powder having a given particle size at a mixing ratio as shown in the following Table 5. The resulting powdery mixture was lightly filled in a crucible and then fired under conditions shown in Table 5 for 2 hours. The crystal phase, yield of Siam4, ratio of a-formation and particle size of Si3N4 in the resulting product were measured in the same manner as in Example 1 to obtain results shown in Table 5. Then, the product of Example 35 was oxidized by heating in air at 500-9000C for 2 hours. The C and 0 contents before and after the oxidation are shown in the following Table 6. In Comparative Example 11, Si powder having a mean particle size of 2 pm was used as a starting powder, so that about 20% of coarse Si3N4 having a particle size of more than 2 pm was observed to be existent in the resulting Si3N4 product having a mean particle size of 1.1 pm. Table 5(a) EMI22.1 Mixing <SEP> ratio <SEP> of <SEP> Average <tb> Yield <SEP> Ratio <tb> starting <SEP> powders <SEP> particle <SEP> N2 <SEP> partial <SEP> Temper- <SEP> Particle <tb> Crystal <SEP> phase <SEP> of <SEP> of <SEP> &alpha;size <SEP> of <SEP> pressure <SEP> ature <SEP> size <tb> in <SEP> product <SEP> Si3N4 <SEP> formation <tb> *1 <SEP> *2 <SEP> Si <SEP> powder <SEP> (atm) <SEP> ( C) <SEP> ( m) <tb> (%) <SEP> (%) <tb> C/SiO <SEP> Si <SEP> ( m) <tb> Example <SEP> 34 <SEP> 0.8 <SEP> 10 <SEP> 0.6 <SEP> 5 <SEP> 1,500 <SEP> &alpha;, <SEP> ss-Si3N4 > > Si2ON2 <SEP> 94 <SEP> 92 <SEP> 0.9 <tb> " <SEP> 35 <SEP> 1.0 <SEP> 10 <SEP> 0.6 <SEP> 5 <SEP> 1,500 <SEP> &alpha; ;, <SEP> ss-Si3N4 <SEP> 98 <SEP> 95 <SEP> 0.9 <tb> " <SEP> 36 <SEP> 1.2 <SEP> 10 <SEP> 0.6 <SEP> 2 <SEP> 1,500 <SEP> " <SEP> 98 <SEP> 95 <SEP> 0.9 <tb> " <SEP> 37 <SEP> 1.4 <SEP> 10 <SEP> 0.6 <SEP> 4 <SEP> 1,500 <SEP> " <SEP> 98 <SEP> 94 <SEP> 0.9 <tb> " <SEP> 38 <SEP> 1.6 <SEP> 10 <SEP> 0.6 <SEP> 6 <SEP> 1,500 <SEP> " <SEP> 97 <SEP> 93 <SEP> 0.9 <tb> " <SEP> 39 <SEP> 1.4 <SEP> 1 <SEP> 0.6 <SEP> 5 <SEP> 1,500 <SEP> " <SEP> 99 <SEP> 95 <SEP> 0.9 <tb> " <SEP> 40 <SEP> 1.4 <SEP> 5 <SEP> 0.6 <SEP> 5 <SEP> 1,500 <SEP> " <SEP> 97 <SEP> 92 <SEP> 0.9 <tb> " <SEP> 41 <SEP> 1.4 <SEP> 8 <SEP> 0.8 <SEP> 2 <SEP> 1,500 <SEP> " <SEP> 99 <SEP> 93 <SEP> 0.9 <tb> " <SEP> 42 <SEP> 1.4 <SEP> 0.1 <SEP> 1.0 <SEP> 3 <SEP> 1,500 <SEP> " <SEP> 97 <SEP> 94 <SEP> 0.9 <tb> " <SEP> 43 <SEP> 1.4 <SEP> 0.5 <SEP> 0.6 <SEP> 5 <SEP> 1,500 <SEP> " <SEP> 98 <SEP> 93 <SEP> 0.9 <tb> " <SEP> 44 <SEP> 1.4 <SEP> 10 <SEP> 0.6 <SEP> 6 <SEP> 1,400 <SEP> " <SEP> 99 <SEP> 95 <SEP> 0.9 <tb> " <SEP> 45 <SEP> 1.4 <SEP> 10 <SEP> 0.6 <SEP> 9 <SEP> 1,700 <SEP> " <SEP> 98 <SEP> 92 <SEP> 1.0 <tb> " <SEP> 46 <SEP> 1.4 <SEP> 10 <SEP> 0.6 <SEP> 3 <SEP> 1,500 <SEP> " <SEP> 98 <SEP> 94 <SEP> 0.9 <tb> Table 5(b) EMI23.1 Mixing <SEP> ratio <SEP> of <tb> Yield <SEP> Ratio <tb> starting <SEP> powders <SEP> particle <SEP> N2 <SEP> partial <SEP> Temper- <SEP> Particle <tb> Crystal <SEP> phase <SEP> of <SEP> of <SEP> &alpha; No. <SEP> size <SEP> of <SEP> pressure <SEP> ature <SEP> size <tb> in <SEP> product <SEP> Si3N4 <SEP> formation <tb> *1 <SEP> *2 <SEP> Si <SEP> powder <SEP> (atm) <SEP> ( C) <SEP> ( m) <tb> (%) <SEP> (%) <tb> C/SiO <SEP> Si <SEP> ( m() <tb> Comparative <SEP> 1.4 <SEP> 10 <SEP> 0.6 <SEP> 0.6 <SEP> 1,500 <SEP> &alpha;, <SEP> ss-Si3N4, <SEP> SiC <SEP> 65 <SEP> 32 <SEP> 1.0 <tb> Example <SEP> 7 <tb> " <SEP> 8 <SEP> 1.4 <SEP> 10 <SEP> 0.6 <SEP> 1.0 <SEP> 1,500 <SEP> " <SEP> 83 <SEP> 55 <SEP> 1.3 <tb> " <SEP> 9 <SEP> 1.4 <SEP> 10 <SEP> 0.6 <SEP> 5 <SEP> 1,200 <SEP> &alpha;, <SEP> ss-Si3N4, <SEP> Si2ON2 <SEP> 53 <SEP> 32 <SEP> 1.1 <tb> " <SEP> 10 <SEP> 1.4 <SEP> 10 <SEP> 0.6 <SEP> 5 <SEP> 2,000 <SEP> &alpha;, <SEP> ss-Si3N4, <SEP> SiC <SEP> 70 <SEP> 40 <SEP> 2.3 <tb> " <SEP> 11 <SEP> 1.4 <SEP> 10 <SEP> 2.0 <SEP> 5 <SEP> 1,500 <SEP> &alpha; ;, <SEP> ss-Si3N4 <SEP> 93 <SEP> 85 <SEP> 1.4 <tb> *1 : molar ratio of C/SiO in powdery mixture *2 : parts by weight based on 100 parts by weight of C+SiO mixture Table 6 EMI24.1 <tb> <SEP> Before <SEP> After <tb> Oxidation <SEP> oxidation <SEP> oxidation <tb> temperature <tb> <SEP> ( C) <SEP> C <SEP> O <SEP> C <SEP> O <SEP> <tb> <SEP> (wt%) <SEP> (wt%) <SEP> (wt%) <SEP> (wt%) <tb> <SEP> 500 <SEP> 0.14 <SEP> 0.9 <SEP> 0.09 <SEP> 1.0 <tb> <SEP> 700 <SEP> 0.14 <SEP> 0.9 <SEP> | <SEP> 0.08 <SEP> 1.2 <tb> <SEP> 900 <SEP> |0.14 <SEP> | <SEP> 0.9 <SEP> | <SEP> 0.08 <SEP> | <SEP> 2.2 <tb> Examples 47-61, Comparative Examples 12-17 A powdery mixture was prepared by uniformly mixing SiO powder having a mean particle size of 0.2 m with carbon black, Si powder and Si3N4 powder having a ratio of a-formation of 90% at a mixing ratio as shown in the following Table 7. This mixture was lightly -filled in a crucible and then fired under conditions shown in Table 7 for 2 hours. Thereafter, the crystal phase, yield of Si3N4, ratio of a-formation and particle size of SisN4 in the resulting product were measured in the same manner as in Example 1 to obtain results as shown in Table 7. Table 7(a) EMI25.1 Mixing <SEP> ratio <SEP> of <SEP> Average <tb> Yield <SEP> Ratio <tb> starting <SEP> powders <SEP> particle <SEP> Temper- <SEP> N2 <SEP> partial <SEP> Particle <tb> Crystal <SEP> phase <SEP> of <SEP> of <SEP> &alpha; No. <SEP> size <SEP> of <SEP> ature <SEP> pressure <SEP> size <tb> in <SEP> product <SEP> Si3N4 <SEP> formation <tb> *1 <SEP> *2 <SEP> *3 <SEP> Si <SEP> powder <SEP> ( C) <SEP> (atm) <SEP> ( m) <tb> (%) <SEP> (%) <tb> C/SiO <SEP> Si <SEP> Si3N4 <SEP> ( m) <tb> Example <SEP> 47 <SEP> 0.8 <SEP> 10 <SEP> 10 <SEP> 0.6 <SEP> 1,500 <SEP> 2 <SEP> &alpha;, <SEP> ss-Si3N4 > > Si2ON2 <SEP> 93 <SEP> 91 <SEP> 0.9 <tb> " <SEP> 48 <SEP> 1.0 <SEP> 10 <SEP> 10 <SEP> 0.6 <SEP> 1,500 <SEP> 2 <SEP> &alpha; ;,ss-Si3N4 <SEP> 97 <SEP> 93 <SEP> 0.8 <tb> " <SEP> 49 <SEP> 1.2 <SEP> 10 <SEP> 15 <SEP> 0.6 <SEP> 1,500 <SEP> 2 <SEP> " <SEP> 98 <SEP> 94 <SEP> 0.9 <tb> " <SEP> 50 <SEP> 1.4 <SEP> 10 <SEP> 10 <SEP> 0.6 <SEP> 1,500 <SEP> 2 <SEP> " <SEP> 98 <SEP> 93 <SEP> 0.9 <tb> " <SEP> 51 <SEP> 1.6 <SEP> 10 <SEP> 10 <SEP> 0.6 <SEP> 1,500 <SEP> 3 <SEP> " <SEP> 97 <SEP> 93 <SEP> 0.9 <tb> " <SEP> 52 <SEP> 1.4 <SEP> 1 <SEP> 10 <SEP> 0.6 <SEP> 1,500 <SEP> 3 <SEP> " <SEP> 94 <SEP> 91 <SEP> 0.9 <tb> " <SEP> 53 <SEP> 1.4 <SEP> 5 <SEP> 0.5 <SEP> 0.6 <SEP> 1,500 <SEP> 3 <SEP> " <SEP> 96 <SEP> 92 <SEP> 0.9 <tb> " <SEP> 54 <SEP> 1.4 <SEP> 10 <SEP> 1 <SEP> 0.6 <SEP> 1,500 <SEP> 4 <SEP> " <SEP> 90 <SEP> 85 <SEP> 0.9 <tb> " <SEP> 55 <SEP> 1.4 <SEP> 10 <SEP> 5 <SEP> 0.6 <SEP> 1,500 <SEP> 4 <SEP> " <SEP> 95 <SEP> 92 <SEP> 0.9 <tb> " <SEP> 56 <SEP> 1.4 <SEP> 10 <SEP> 10 <SEP> 0.8 <SEP> 1,500 <SEP> 4 <SEP> " <SEP> 98 <SEP> 94 <SEP> 1.0 <tb> " <SEP> 57 <SEP> 1.4 <SEP> 10 <SEP> 0.1 <SEP> 10 <SEP> 1,500 <SEP> 6 <SEP> " <SEP> 97 <SEP> 94 <SEP> 1.2 <tb> " <SEP> 58 <SEP> 1.4 <SEP> 10 <SEP> 10 <SEP> 0.6 <SEP> 1,400 <SEP> 6 <SEP> " <SEP> 99 <SEP> 96 <SEP> 0.9 <tb> " <SEP> 59 <SEP> 1.4 <SEP> 10 <SEP> 10 <SEP> 0.6 <SEP> 1,700 <SEP> 6 <SEP> " <SEP> 97 <SEP> 90 <SEP> 0.9 <tb> " <SEP> 60 <SEP> 1.4 <SEP> 10 <SEP> 10 <SEP> 0.6 <SEP> 1,500 <SEP> 5 <SEP> " <SEP> 99 <SEP> 94 <SEP> 0.8 <tb> " <SEP> 61 <SEP> 1.4 <SEP> 10 <SEP> 10 <SEP> 0.6 <SEP> 1,500 <SEP> 10 <SEP> " <SEP> 99 <SEP> 92 <SEP> 0.8 <tb> Table 7(b) EMI26.1 Mixing <SEP> ratio <SEP> of <SEP> Average <tb> Yield <SEP> Ratio <tb> starting <SEP> powders <SEP> particle <SEP> Temper- <SEP> N2 <SEP> partial <SEP> Particle <tb> Crystal <SEP> phase <SEP> of <SEP> of <SEP> &alpha; No. <SEP> size <SEP> of <SEP> ature <SEP> pressure <SEP> size <tb> in <SEP> product <SEP> Si3N4 <SEP> formation <tb> *1 <SEP> *2 <SEP> *3 <SEP> Si <SEP> powder <SEP> ( C) <SEP> (atm) <SEP> ( m) <tb> (%) <SEP> (%) <tb> C/SiO <SEP> Si <SEP> Si3N4 <SEP> ( m) <tb> Comparative <SEP> 1.4 <SEP> 10 <SEP> 0 <SEP> 0.6 <SEP> 1,500 <SEP> 1 <SEP> &alpha;, <SEP> ss-si3N4 > > SiC <SEP> 82 <SEP> 50 <SEP> 1.0 <tb> Example <SEP> 12 <tb> *4 <tb> " <SEP> 13 <SEP> 1.4 <SEP> 10 <SEP> 10 <SEP> 2.0 <SEP> 1,500 <SEP> 3 <SEP> &alpha;, <SEP> ss-Si3N4 <SEP> 93 <SEP> 85 <SEP> 1.4 <tb> " <SEP> 14 <SEP> 1.4 <SEP> 10 <SEP> 10 <SEP> 0.6 <SEP> 1,200 <SEP> 2 <SEP> &alpha;, <SEP> ss-Si3N4 > > Si2ON2 <SEP> 55 <SEP> 36 <SEP> 0.8 <tb> " <SEP> 15 <SEP> 1.4 <SEP> 10 <SEP> 10 <SEP> 0.6 <SEP> 2,000 <SEP> 2 <SEP> &alpha;, <SEP> ss-Si3N4 > > SiC <SEP> 75 <SEP> 42 <SEP> 2.4 <tb> &alpha; ;, <SEP> ss-Si3N4 > Si2ON2, <tb> " <SEP> 16 <SEP> 0.6 <SEP> 10 <SEP> 10 <SEP> 0.6 <SEP> 1,500 <SEP> 4 <SEP> 70 <SEP> 60 <SEP> 1.0 <tb> SiO2 <tb> " <SEP> 17 <SEP> 2.2 <SEP> 10 <SEP> 10 <SEP> 0.6 <SEP> 1,500 <SEP> 2 <SEP> &alpha;, <SEP> ss-Si3N4 > ss-SiC <SEP> 81 <SEP> 62 <SEP> 1.2 <tb> *1 : molar ratio of C/SiO in powdery mixture *2 # parts by weight based on 100 parts by weight of C+SiO mixture *3 *4 : About 20% of coarse Si3N4 having a particle size of more than 2 m was existent in the product powder. Examples 62-79, Comparative Examples 18-22 A powdery mixture was prepared by uniformly mixing SiO powder having a mean particle size of 0.2 pm with carbon black and, if necessary, Si powder and/or Sign4 powder having a ratio of a-formation of 90% at a mixing ratio as shown in the following Table 8, which was then shaped into a molded body of 30 mm in diameter and 30 mm in length having a bulk density shown in Table 8 by means of an extrusion molding machine using a 5% PVA solution as an organic binder. The resulting molded body was fired in a pressurized Tammann furnace under conditions shown in Table 8 for 2 hours. Thereafter, the crystal phase, yield of Si3N4 and particle size of Si3N4 in the resulting product were measured in the same manner as in Example 1 to obtain results as shown in Table 8. Table 8(a) EMI28.1 Starting <SEP> powders <tb> Yield <tb> <SEP> Bulk <SEP> Temper- <SEP> N2 <SEP> partial <SEP> Particle <tb> No. <SEP> Crystal <SEP> phase <SEP> of <tb> C/SiO <SEP> density <SEP> ature <SEP> pressure <SEP> size <tb> Si3N4 <SEP> Si <SEP> in <SEP> product <SEP> Si3N4 <tb> molar <SEP> (g/cm ) <SEP> ( C) <SEP> (atm) <SEP> ( m) <tb> (wt%) <SEP> (wt%) <SEP> (%) <tb> ratio <tb> Example <SEP> 62 <SEP> 1.5 <SEP> - <SEP> - <SEP> 0.3 <SEP> 1,600 <SEP> 2 <SEP> Si3N4 <SEP> 0.5 <SEP> 96 <tb> " <SEP> 63 <SEP> 1.5 <SEP> - <SEP> - <SEP> 0.5 <SEP> 1,600 <SEP> 2 <SEP> " <SEP> 0.6 <SEP> 96 <tb> " <SEP> 64 <SEP> 1.5 <SEP> - <SEP> - <SEP> 0.7 <SEP> 1,600 <SEP> 3 <SEP> " <SEP> 0.7 <SEP> 96 <tb> " <SEP> 65 <SEP> 1.5 <SEP> - <SEP> - <SEP> 0.85 <SEP> 1,600 <SEP> 3 <SEP> " <SEP> 0.7 <SEP> 95 <tb> " <SEP> 66 <SEP> 0.7 <SEP> - <SEP> - <SEP> 0.5 <SEP> 1,600 <SEP> 3 <SEP> " <SEP> 0.6 <SEP> 94 <tb> " <SEP> 67 <SEP> 2.0 <SEP> 0.1 <SEP> - <SEP> 0.5 <SEP> 1,600 <SEP> 5 <SEP> " <SEP> 0.6 <SEP> 98 <tb> " <SEP> 68 <SEP> 1.5 <SEP> 0.5 <SEP> - <SEP> 0.4 <SEP> 1,400 <SEP> 5 <SEP> " <SEP> 0.6 <SEP> 98 <tb> " <SEP> 69 <SEP> 1.2 <SEP> 5 <SEP> - <SEP> 0.6 <SEP> 1,800 <SEP> 5 <SEP> " <SEP> 0.6 <SEP> 98 <tb> " <SEP> 70 <SEP> 1.7 <SEP> - <SEP> - <SEP> 0.5 <SEP> 1,500 <SEP> 2 <SEP> " <SEP> 0.6 <SEP> 96 <tb> " <SEP> 71 <SEP> 1.0 <SEP> - <SEP> - <SEP> 0.5 <SEP> 1,500 <SEP> 10 <SEP> " <SEP> 0.6 <SEP> 97 <tb> " <SEP> 72 <SEP> 1.5 <SEP> 1 <SEP> - <SEP> 0.5 <SEP> 1,500 <SEP> 5 <SEP> " <SEP> 0.6 <SEP> 98 <tb> " <SEP> 73 <SEP> 1.7 <SEP> 5 <SEP> - <SEP> 0.3 <SEP> 1,700 <SEP> 5 <SEP> " <SEP> 0.5 <SEP> 99 <tb> " <SEP> 74 <SEP> 1.2 <SEP> 10 <SEP> - <SEP> 0.6 <SEP> 1,600 <SEP> 3 <SEP> " <SEP> 0.6 <SEP> 99 <tb> " <SEP> 75 <SEP> 1.5 <SEP> - <SEP> 1 <SEP> 0.7 <SEP> 1,500 <SEP> 5 <SEP> " <SEP> 0.7 <SEP> 98 <tb> Table 8(b) EMI29.1 Starting <SEP> powders <SEP> Yield <tb> <SEP> Bulk <SEP> Temper- <SEP> N2 <SEP> partial <SEP> Particle <tb> No. <SEP> Crystal <SEP> phase <SEP> of <tb> C/SiO <SEP> density <SEP> ature <SEP> pressure <SEP> size <tb> Si3N4 <SEP> Si <SEP> in <SEP> product <SEP> Si3N4 <tb> molar <SEP> (g/cm ) <SEP> ( C) <SEP> (atm) <SEP> ( m) <tb> (wt%) <SEP> (wt%) <SEP> (%) <tb> ratio <tb> Example <SEP> 76 <SEP> 1.2 <SEP> - <SEP> 5 <SEP> 0.5 <SEP> 1,400 <SEP> 3 <SEP> Si3N4 <SEP> 0.5 <SEP> 99 <tb> " <SEP> 77 <SEP> 1.7 <SEP> - <SEP> 10 <SEP> 0.3 <SEP> 1,700 <SEP> 5 <SEP> " <SEP> 0.5 <SEP> 99 <tb> " <SEP> 78 <SEP> 1.5 <SEP> 5 <SEP> 10 <SEP> 0.4 <SEP> 1,800 <SEP> 10 <SEP> " <SEP> 0.6 <SEP> 99 <tb> " <SEP> 79 <SEP> 1.5 <SEP> 10 <SEP> 5 <SEP> 0.6 <SEP> 1,500 <SEP> 5 <SEP> " <SEP> 0.5 <SEP> 99 <tb> Comparative <SEP> 1.5 <SEP> - <SEP> - <SEP> 0.9 <SEP> 1,600 <SEP> 5 <SEP> Si3N4, <SEP> Si2ON2 <SEP> 1.0 <SEP> 65 <tb> Example <SEP> 18 <tb> " <SEP> 19 <SEP> 1.5 <SEP> - <SEP> - <SEP> 1.2 <SEP> 1,600 <SEP> 5 <SEP> " <SEP> 1.1 <SEP> 60 <tb> " <SEP> 20 <SEP> 1.5 <SEP> 10 <SEP> - <SEP> 0.9 <SEP> 1,600 <SEP> 5 <SEP> " <SEP> 1.0 <SEP> 67 <tb> " <SEP> 21 <SEP> 1.5 <SEP> - <SEP> 10 <SEP> 1.0 <SEP> 1,600 <SEP> 5 <SEP> " <SEP> 1.0 <SEP> 67 <tb> " <SEP> 22 <SEP> 1.5 <SEP> 10 <SEP> 10 <SEP> 0.9 <SEP> 1,600 <SEP> 5 <SEP> " <SEP> 1.0 <SEP> 70 <tb> As mentioned above, according to the invention, high purity silicon nitride fine powders having a high a-formation ratio can be produced cheaply and efficiently. Furthermore, when the powdery mixture is shaped into the molded body, the particle size is made as fine as about 0.6 m and the handling and the reaction control become easy, so that it is possible to perform mass production of SiSN4 powder.

Claims: CLAIMS 1. A method of producing silicon nitride powders, which comprises mixing SiO powder with a carbonaceous material and then firing the resulting mixture at a temperature of 1,400-1,8000C in a nitriding atmosphere having a partial nitrogen pressure of not less than 2 atmospheric pressures. 2. The method according to claim 1, wherein said mixture has a molar ratio of C/SiO of 0.7-2.0. 3. The method according to claim 1, wherein said mixture further contains Si3N4 powder and/or Si powder. 4. The method according to claim 1, wherein said mixture is shaped into a molded body having a bulk density of not more than 0.85 g/cm3 prior to said firing. 5. The method according to claim 3, wherein said mixture is shaped into a molded body having a bulk density of not more than 0.85 g/cm3 prior to said firing.

Inventors: FUNAHASHI, TOSHIHIKO TECHNICAL RESEARCH DIVISION, OGUCHI, YUKIO TECHNICAL RESEARCH DIVISION, UCHIMURA, RYOJI TECHNICAL RESEARCH DIVISION, UENOSONO, SATOSHI TECHNICAL RESEARCH DIVISION
Applicants: KAWASAKI STEEL CORPORATION
Application year: 1986
Main classification: C01B21
IPC codes: C01B21, C04B35