METHOD OF MAKING AN INTEGRATED FERROELECTRIC DEVICE, AND DEVICE PRODUCED THEREBY

Abstract: A combined integrated circuit/ferroelectric memory device using Phase III potassium nitrate as the ferroelectric material and which appears in the final device only at the crossover points of the top and bottom electrodes. The method of fabrication may use ion milling and ashing off of remaining resist. A method of making an integrated ferroelectric device comprising the steps of: (a) forming a first non-conductive layer (73) close to decode circuitry (68) of an integrated circuit (60); (b) forming channels (74-80) through layer (73); (c) forming trenches (89-95) in layer (73) next to channels (74-80); (d) completely filling channels (74-80) and partially filling trenches (89-95) with a first metal (98); (e) filling voids in trenches (89-95) with a second non-conductive material (99); (f) planarizing the upper surface (100) of layer (73), metal (98), and material (99); (g) forming a second non-conductive layer (102) on surface (100); (h) forming passages (103-113) through layer (102) next to trenches (89-95); (i) forming a ferroelectric layer (116) to overlie layer (102) and part of metal (98); (j) forming a second metal (117) to overlie layer (116); (k) removing undesired parts of metal (117), layer (116), and layer (102); (l) forming a third metal layer to overlie the remainder (121) of metal (117) and of layer (102), and exposed portions (120) of layer (116) and of first metal (98); and (m) removing undesired portions of the third metal layer.

Description: METHOD OF MAKING AN INTEGRATED FERROELECTRIC DEVICE, AND DEVICE PRODUCED THEREBY The present invention relates to a method of making an integrated ferroelectric device - and a device produced thereby. Summary of the Invention One aspect of the invention may be summarized as follows: A method of making an integrated ferroelectric device, comprising the steps of: (a) forming a planarized first non-conductive layer over at least a portion of the decode circuitry of an integrated circuit; (b) forming contact apertures in said planarized first non-conductive layer; (c) forming trenches in said planarized first non-conductive layer with patterned photoresist material adjacent to said contact apertures and trenches; (d) depositing a first conductive material into said contact apertures and trenches and over said patterned photoresist material; (e) removing said patterned photoresist material and said first conductive material except for said first conductive material deposited in said contact apertures and trenches; (f) filling voids in said trenches with a second non-conductive material; (g) planarizing said first non-conductive layer, said second non-conductive material, and said first conductive material in said trenches; (h) forming thereon a second layer of non-conductive material; (i) forming apertures in said second layer of non-conductive material; 2 (j) forming thereon a ferroelectric layer; (k) forming thereon a second conductive material; (1) forming thereon a third layer of non-conductive material; (m) removing said third layer of non-conductive material, and undesired portions of said second conductive material, of said ferroelectric layer, and of said second layer of non-conductive material whereby portions of said ferroelectric layer are exposed; (n) forming thereon a third conductive material; and (o) removing undesired portions of said third conductive material. Another aspect of the invention may be summarized as follows: An integrated ferroelectric device comprising: (a) a planarized first non-conductive layer; (b) said planarized first con-conductive layer having at least one contact aperture therein; (c) a trench formed near the upper portion of said contact aperture; (d) a first conductive material disposed within said contact aperture in said trench; (e) a second non-conductive material disposed in said trench between said first conductive material in said trench and the side walls of said trench; (f) a planarized top surface of said first non-conductive layer, said second non-conductive material and said first contact material; (g) a ferroelectric layer having at least a portion which is contiguous with at least a portion of said planarized top surface of said first conductive material; (h) a second non-conductive layer disposed on top of said planarized top surface of said first layer and said second non-conductive material and on top of at least a portion of said planarized top surface of said first conductive material; (i) a second conductive material disposed on top of said ferroelectric layer; (j) side walls formed by a portion of said second layer of non-conductive material, a portion of said ferroelectric layer, and a portion of said second conductive material; and (k) a third conductive material disposed on top of said second conductive material and a portion of said second layer of non-conductive material, and encapsulating said side walls. The invention also provides a method of fabricating a combined integrated circuit/ferroelectric memory device, including the steps of removing predetermined portions of a surface of an integrated circuit for providing contacts with the input/output logic of the integrated circuit, and thereafter depositing a first conductive layer. The method proceeds with removing undesired portions of the first conductive layer, depositing a ferroelectric layer, and thβn depositing a second conductive layer. The method proceeds with then removing undesired portions of the ferroelectric layer and of the second conductive layer, depositing a passivation layer, and then removing undesired portions of the passivation layer. The method then proceeds with depositing a third conductive layer for electrically connecting the second conductive layer to the input/output logic of the integrated circuit, and thereafter removing undesired portions of the third conductive layer. A primary object of the present invention is to provide a method for building an integrated ferroelectric device whereby the top electrode (interconnect) encapsulates the ferroelectric cell. A further object of the invention is to provide a method for constructing an integrated ferroelectric device where the top electrode (interconnect) encapsulates a Phase III K 0 3 cell. An object of the present invention is to provide a device and a method as described and/or claimed herein 4 wherein the ferroelectric layer which is deposited comprises and/or includes Phase III potassium nitrate. Another object of the present invention is to provide a device and a method as described and/or claimed herein wherein the ferroelectric layer and the second conductive layer are both deposited during a single pumpdown, i.e., under the same vacuum condition. A further object of the present invention is to provide a device and a method as described and/or claimed herein wherein undesired portions of the ferroelectric layer and the second conductive layer are removed by means of ion milling. Yet another object of the present invention is to provide a method and a device as described and/or claimed herein wherein the ferroelectric layer has a thickness of less than 110 microns, and preferably falling within the range of from 100 Angstrom units to 5,000 Angstrom units. A further object of the present invention is to provide a device and a method as described and/or claimed herein wherein after the step of depositing the ferroelectric layer, and prior to. depositing the second conductive layer, there is included the step of filling any grain boundaries, cracks and/or imperfections in the ferroelectric layer with insulative material. Another object of the present invention is to provide a a device and a method as described and/or claimed herein wherein prior to the step of depositing the first conductive layer, there is included the steps of forming first layer interconnects on the surface of the semiconductor integrated circuit, and thereafter depositing a non-semiconductor dielectric and forming interconnect and bonding pad vias therein. A further object of the present invention is to provide a device and a method as described and/or claimed herein wherein the step of depositing the second conductive layer includes the deposition of a conductive layer forming a top electrode, wherein this conductive layer is selected from the group consisting essentially of conductive metal oxides, metals and metal alloys which will oxidize to form conductive oxides. An additional object of the present invention is to provide a device and a method as described and/or claimed herein wherein the first layer interconnects are composed of doped polysilicon. A further object of the present invention is to provide a method and a device as described and/or claimed herein wherein the non-semiconductor dielectric and/or passivation layer is selected from the group consisting of low temperature glass, silicon dioxide, silicon nitride, oxides, and sputtered and/or evaporated dielectrics. Another object of the present invention is to provide a device and a method as described and/or claimed herein wherein the Phase III potassium nitrate layer has a thickness within a range of from 100 Angstrom units to 25,000 Angstrom units. A further object of the invention is to provide a device and a method as described and/or claimed herein wherein the Phase III potassium nitrate layer has a thickness of less than 2 microns and is stable at room temperature. Another object of the present invention is to provide a device and a method as described and/or claimed herein wherein after deposition of the first conductive layer, and prior to the deposition of the ferroelectric layer, there is included the step of depositing a second non-semiconductor dielectric and forming vias therein. A further object of the present invention is to provide combined integrated circuit/ferroelectric memory devices produced in accordance with any of the methods described and/or claimed herein. These objects and other objects, features, aspects and advantages of present invention will become more apparent from the following detailed description of the present invention when taken in conjunction with the accompanying drawings. Brief Description of the Drawings Fig. 1 shows a top plan view of an integrated circuit chip depicting connections to the integrated circuit driving logic through first cuts in a surface of the integrated circuit. Fig. 2 illustrates a sectional view taken along the line 2-2 shown in Fig. 1. Fig. 3 illustrates a cross-section of a further stage in the method showing the first conductive layer on which has been deposited a ferroelectric layer, and upon which in turn has been deposited a second conductive layer, and upon which in turn has been deposited photoresist. Fig. 4 illustrates a cross-section of a further stage in the method in which undesired portions of the first conductive layer, ferroelectric layer and second conductive layer have been removed by ion milling, and also indicating the remaining resist ashed off in vacuum. Fig. 5 illustrates a top plan view of a further stage in the method showing the openings to the second conductive layer at each cell, and the openings for the contacts to the substrate pads for the top electrodes. Fig. 6 illustrates a sectional view taken along the line 6-6 shown in Fig. 5. Fig. 7 illustrates a top plan view of the integrated circuit chip showing a further stage in the method wherein the third conductive layer has been applied to define a top metal electrode with its connection to the substrate pads. Fig. 8 illustrates a sectional view taken along the line 8-a shown in Fig. 7. Fig. 9 shows a fragmentary elevational view of a partially planarized integrated circuit surface in connection with another aspect of the invention. Fig. 10 is a top plan view of an integrated circuit wherein the decoding IC surface is exceptionally planar. Fig. 11 shows a top plan view of another embodiment of the invention wherein the decoding IC surface is not exceptionally planar. Fig. 12 shows a fragmentary edge view of an early stage in the inventive process showing the contact cuts through a non-conductive layer on top of the IC chip. Fig. 13 illustrates a partial top plan view of the device in the stage as shown in Fig. 12. Fig. 14 is a partial cross-sectional view in elevation taken along the line 14-14 shown in Fig. 15. Fig. 15 illustrates a partial top plan view of a further stage in the fabrication technique showing the trench photoresist. Fig. 16 is a partial cross section in elevation taken along the line 16-16 shown in Fig. 17. Fig. 17 illustrates a partial top plan view of a further stage in the fabrication technique showing the .trench etch. Fig. 18 is a fragmentary cross-sectional view in elevation taken along the line 18-18 shown in Fig. 19. Fig. 19 is a partial top plan view of a further stage in the fabrication technique showing the bottom electrode or trench metal deposition. Fig. 20 is a partial cross-sectional elevational view taken along the line 20-20 shown in Fig. 19, but at a further stage than the Fig. 19 stage, showing the results of the photoresist lift-off process. Fig. 21 is a view similar to Fig. 20 but at a further stage of the fabrication technique showing the spin-on glass application. Fig. 22 is a view similar to Fig. 21 but showing a further stage in the fabrication technique illustrating the trench assemblage following the plasma etching operation. Fig. 23 is a view similar to Fig. 22 but showing a further stage in the fabrication technique illustrating the silicon dioxide or silicon nitride deposition following the trench metal deposition and planarization. f 8 Fig. 24 is a fragmentary cross-sectional elevational view taken along the line 24-24 shown in Fig. 25. Fig. 25 is a partial top plan view showing a further stage in the fabrication technique illustrating the cell definition cut. Fig. 26 is a partial cross-sectional elevational view taken along the line 26-26 shown in Fig. 27. Fig. 27 is a partial top plan view of a further stage in the fabrication technique after the KNO,, cap metal and silicon nitride deposition. Fig. 28 is a partial cross-sectional elevational view taken along the line 28-28 shown in Fig. 29. Fig. 29 is a partial top plan view of a further stage in the fabrication technique after the KNO_ cell top electrode definition. Fig. 30 is a partial cross-sectional elevational view taken along the line 30-30 shown in Fig. 31. Fig. 31 is a partial top plan view of a further stage in the fabrication technique showing the top metal stripe and circuit interconnections. Fig. 32 is a fragmentary enlarged cross-sectional elevational view of the KNO, cross section taken along the • line 32-32 shown in Fig. 31. Detailed Description of Some Preferred Embodiments With reference to Figs. 1 and 2 there is shown an integrated circuit chip 1 with its input/output driving logic 2 covered by a protective layer 3, such as, for example formed of silicon dioxide. The first step in the novel process is to remove predetermined portions of the layer 3 of the integrated circuit 1 for providing contacts with the input output logic 2 of the integrated circuit 1. This is done by forming holes 4, 5, 6, 7, 8, 9 and 10 by well known photoresist and etching techniques. When this step has been completed, the next step is to deposit a first conductive layer which is then defined and cut by standard photoresist and etching techniques to form the first conductive layer portions 11-17 as shown in Fig. 1. Thereafter, there is deposited a ferroelectric layer 18, such as for example Phase III potassium nitrate. There is also formed or deposited a second conductive layer 19, as shown in Fig. 3. Preferably, but not necessarily, a ferroelectric layer 18 and the second conductive layer 19 are deposited during a single pumpdown, i.e., under vacuum conditions. The chips or wafers are then removed from the vacuum system. Then various photoresist steps are performed, such as to define the memory cells, to develop and to hard bake. The purpose of the hard baking is to harden up the resist material so that such material is very resistant and hard. After the photoresist pattern has been developed and hard baked, the wafer with the resist pattern thereon, such as the photoresist 20 as shown in Fig. 3, is placed into an appropriate machine for removing undesired portions of the second conductive metal 19 and the ferroelectric layer 18, except in those areas which are protected by the photoresist 20. Although the aforementioned machine may constitute a sputtering machine, in accordance with a preferred embodiment of the present invention the machine employed is an ion mill machine which will bombard the entire wafer or chip with ions to "etch" out all of the metal 19 and ferroelectric material 18 where desired. With reference to Fig. 4, it should be noticed that various areas, such as areas 21, 22, 23 and 24, have been ion milled to an over- etched condition. It should also be noticed that this ion milling or over-etching eliminates or knocks off sharp corners of the structure. The ion milling procedure is carried out under vacuum conditioned or under a pumpdown. During this same pumpdown or vacuum condition, it is preferable to oxidize or ash off the remaining photoresist 20 (as shown in Fig. 3) which is indicated by the phantom line portion 25 in Fig. 4. In the preferred embodiment, this ashing off or oxidation step is performed in the ion milling machine under vacuum. A predetermined quantity of oxygen is bled into the machine, and the raw oxygen then attacks the photoresist 20. The photoresist 20 is similar to a plastic. The oxygen decomposes the plastic or resist 20, and the decomposition products are pumped out. Thereafter, a passivation layer, such as glass 26 (see Fig. 6) is deposited over the chip 1. Preferably, glass is evaporated over the entire wafer or chip. This also is done during the same single pumpdown or vacuum condition which prevails for the ion milling and ashing off process step mentioned hereinabove. Thereafter the chips or wafers, in the form partially illustrated in Fig. 4, are removed from the ion milling system or machine. The next step is to remove undesired portions of- the passivation layer 26. This is done by standard photoresist/etch techniques to open the top contacts to the cells, and to open the contacts to the • substrate pads for the top electrodes. As shown in Figs. 5 and 6, this photoresist/etching step produces the cut vias 27-45. There is thereafter deposited a third conductive layer 47 over the entire chip to electrically connect the second conductive layer 19 to desired portions of the input/output circuit 2 of the integrated circuit chip 1. This is followed by photoresist/etching steps to define the top metal electrode to connect the top electrode to the substrate pads. This is best illustrated in connection with Fig. 7 and 8. In Fig. 7 and 8 there are shown the bottom electrodes 12, 13 and 14 and the orthogonally arranged top electrodes 48, 49 and 50, such top electrodes being formed from the aforementioned deposited third conductive layer 47. Thereafter, the invention contemplates the optional step of passivation for the entire chip 1, and especially for the top electrodes in order to provide scratch protection. This may be done, if desired, by depositing another layer of a passivation material, such as glass and then to cut out those areas where bonding pads would be exposed. In other words, this may be done by placing a photoresist over the entire chip after the top passivation, and then cutting holes down to the bonding pads which would go out therefrom. The terms "ferroelectric layer", "ferroelectric material" and "ferroelectric array" as used herein means any and all ferroelectric materials. However, such terms as used herein preferably refer to, but are not limited to, Phase III K 0 3 . The terms "non-conductive material", "non-conductive layer", "passivation layer", "insulative material", "passivation coating" , "non-semiconductor dielectric" , and "passivation material" include, but are not limited to, silicon dioxide, silicon nitride, spin-on glass, sputtered and/or evaporated dielectrics, and other forms of glass. At least some ferroelectric memory arrays, including a K O- 3 memory array, are sensitive to moisture contamination. Any topological flaws, passivation pinholes, etc., which allow moisture to come into contact with the ferroelectric material, such as the Phase III KN0-. film, can ultimately destroy the memory. It is therefore desirable to fabricate the ferroelectric array on top of a very planar surface. Many conventional integrated circuit processes utilize a reflow glass technique to planarize the IC surface. If the resulting surface is sufficiently smooth or flat, and if the reflowed glass is thick enough, then the ferroelectric memory array in accordance with the present invention may be structured on top of the decode circuitry of the IC. In this connection, reference is made to Figs. 9 and 10. Fig. 9 illustrates a partially planarized IC surface showing an IC chip 60 with conductors 61-64 on the decode circuitry of such IC chip 60. Preferably, but not necessarily, the conductors 61-64 may take the form of conductive polysilicon lines. 1 2 Fig. 9 also illustrates a non-conductive material 65, which preferably, but not necessarily, may take the form of reflow glass. The reflow glass 65 is depicted with a somewhat undulating pattern to indicate a partially planarized IC surface. Fig. 10 illustrates a preferred embodiment of the present invention wherein the decoding IC surface is exceptionally planar. Bonding pads 66, 67 are disposed around the periphery of the decode circuitry 68 upon which the ferroelectric memory array would subsequently be constructed. If, however, the decoding IC surface cannot be sufficiently planarized, then the memory array may be structured over a substantially flat portion of the device in such a way that the decoding circuitry surrounds the ferroelectric memory array. In this connection, reference is made to Fig. 11. Fig. 11 illustrates an alternate embodiment of the present invention wherein the decoding IC surface is not exceptionally planar. A ferroelectric memory array 69 would be disposed to be .surrounded by the decode circuitry 70. Bonding pads 71, 72 would be disposed around the periphery of the decode circuitry 70. Reverting particularly, but not necessarily, to Figs. 9 and 10, it should be pointed out that the reflow glass 65 may preferably, but not necessarily, be CVD silicon dioxide which is heavily doped with phosphorous. Such a reflow glass 65 tends to flow or planarize at some temperature less than approximately 1000°C, depending upon the phosphorous content of the glass. The etch rate of the reflow glass 65 is also dependent on the phosphorous content of such glass. Subsequent glass (silicon dioxide or silicon nitride) depositions on top of the reflowed glass 65 can create a composite structure which etches non-uniformly because of the non-uniform doping profile throughout the composite layer. It is therefore desirable to reflow a layer of glass which is sufficiently thick to both planarize the surface 13 and provide sufficient dielectric isolation between the conductors 61-64 on the decode circuitry 68 and the bottom electrodes of the ferroelectric memory array to be constructed. Such thickness should preferably, but not necessarily, be 8 to 12KA. This thickness dimension . is shown in Fig. 12 as the thickness dimension of the composite non-conductive layer 73. As shown in Figs. 12 and 13 there is deposited on top of the IC chip 60 a composite non-conductive layer 73 which may preferably, but not necessarily, consist of the reflow glass 65 and the above-mentioned subsequent glass (silicon dioxide or silicon nitride) depositions on top of the reflow glass 65. This composite layer 73 provides both the planarized surface and sufficient dielectric isolation between the conductors 61-64 and the bottom electrodes of the ferroelectric memory array to be constructed. After forming the composite layer 73, a plurality of contact cuts or channels 74-80 are formed within and through the layer 73. For example, contact cut 74 and 75 may be proyided for the bonding pads 66 and 67 of Fig. 10, or alternately for the bonding pads 71 and 72 of Fig. 11. Contact cuts 76 and 77 may be provided for the bottom electrodes of the ferroelectric memory array which are oriented substantially horizontally in Figs. 24, 26, 27, 28, 30 and 31. Similarly, contact cuts 78, 79 and 80 are for connecting to the decode circuitry the top electrodes of the ferroelectric memory array which are oriented substantially vertically in Figure 31. As indicated hereinabove, it is desirable to obtain a well planarized surface prior to the ferroelectric memory array depositions. This may be accomplished with the following trenching technique. There are performed the steps of photoresist deposition, exposure, and development which result in the configuration shown in Figs. 14 and 15. The photoresist layer 81 has formed therein bottom electrode elongated openings 82 and 83; top electrode contact openings 84, 85 and 86; and bonding pad openings 87 and 88. Thereafter, an etching operation is performed to provide the trenches as shown in the configuration illustrated in Figs. 16 and 17. The trench-forming operation results in trenches 89-95 all of which have substantially sloping side walls 97 which undercut the photoresist as shown, for example, at 96. With reference to Figs. 18 and 19, a first conductive material, such as metal 98, is deposited over the entire wafer and completely fills contact cuts 74-80, and partially fills trenches 89-95. The trenches 89-95 are filled at least to the height thereof, but empty spaces or voids are left between the metal 98 in such trenches and the sloping side walls 97 thereof. In this connection, Fig. 19 is a partial top plan view which has been slightly modified to show the outline of the upper surface of the metal 98 which is for ed - in the trenches 89-95. An unmodified top plan 1 view would merely show the metal 98 over the entire wafer. It should be noted at this point that the present invention contemplates that the metal 98 is merely indicative of one or more conductive materials or metals which may be employed, depending upon the desired application. In a preferred embodiment of the present invention, the material designated as metal 98 may consist of several layers -of various metals, such as, for example, a lowermost layer of aluminum, an intermediate layer of nickel, and an uppermost layer of gold. Various other combinations of metals may also be suitably employed. The configuration as shown in Figs. 18 and 19 is then subjected to a process for removing the patterned photoresist material 81 together with any metal 98 which has been deposited on such patterned photoresist material 81. This removal or photoresist or lift-off process leaves metal 98 only in the contact cuts 74-80 and trenches 89-95. An exemplary way of performing this removal step is by immersion of the wafer in a suitable solution, such as acetone, to lift-off the photoresist and the excess metal deposited thereon. The results of the photoresist lift-off process is best illustrated in Fig. 20. Thereafter, the voids in the trenches are filled with a second non-conductive material 99, such as spin-on glass (silicon dioxide) . With reference to Fig. 21, which illustrates the spin-on glass application, it can be seen that the spin-on glass 99 may not only fill the voids in the trenches, but also provides a layer of non-conductive material over the entire assemblage. With reference to Fig. 22, following the application of the spin-on glass 99, the surface of the wafer is planarized, for example, by plasma etching, back to the original surface 100 of layer 73. This leaves the spun-on glass substantially in the shape of triangular parallelepipeds 101 interposed between the vertical walls of the metal 98 and the sloping side walls 97 of the trenches. With reference to Fig. 23, another layer 102 of non-conductive material is then formed over the entire surface of the wafer. Preferably, but not necessarily, this layer 102 may take the form of silicon dioxide or silicon nitride. With reference to Figs. 24 and 25, there are then formed in the non-conductive layer 102 a series of apertures in the form of trenches 103-113. Preferably, but not necessarily, such trenches 103-113 have sloping side walls 115 which meet the upper surface of the metal 98 inwardly of the outer extremities of such upper surface as indicated at 114. The trenches 103-108 serve as the cell areas for the ferroelectric memory cells. The trenches 109-111 serve to open up the contact pads for the top electrodes. The trenches 112 and 113 serve to open up the bonding pads. With reference to Figs. 26 and 27, there are then deposited a ferroelectric layer 116, which is preferably, but not necessarily, a thin film of Phase III KN0-; a cap metal 117; and an upper non-conductive layer 118, which is 16 preferably, but not necessarily, formed from either silicon dioxide or silicon nitride. The layers 116-118 are deposited preferably, but not necessarily, in vacuum in such a manner that the photoresist operation which is to follow will not convert or in any manner adversely affect the Phase III KN0 3 thin film. Fig. 27 is a top plan view which has been slightly modified to show the relative positions of some of the .underlying structure. An unmodified top plan view in Fig. 27 would merely show the ' upper surface of the non-conductive layer 118. With reference to Figs. 28 and 29, the cap electrode photostep involves definition and etching of the silicon nitride layer 118 in such a way that, after photoresist removal, the pattern is transferred to the nitride layer 118. Preferably, but not necessarily, the wafer is then ion milled in vacuum so that the silicon nitride pattern is transferred to the underlying layers 117 and 116. The ion milling step removes the top nitride 118 completely, and etches the cap metal 117 and the KNO- layer 116 from all areas except those defined by the photopattern. This series of operations clears the bonding pads, the top electrode contacts, and overetches the lower silicon nitride layer 102 as shown at 119 in Fig. 28. The trenches 109-111 of the top electrode contacts, as well as the trenches 112 and 113 for the bonding pads, are cleared down to the top surface of the metal 98 as indicated, for example, by the surface 100 shown in Fig. 28. In the area of the ferroelectric memory cells, the cap electrode layer 117 is removed except for the metal caps 121. At the same time, substantially vertical walls 122 are formed comprising the substantially vertical portions of the metal caps 121, the exposed edge 120 of the KNO-., and a vertical portion in layer 102 in the overetched area 119, all of which is most clearly represented in Fig. 32. 1 7 Thereafter, a layer of metal may be deposited over the whole ' wafer while still under vacuum. In this configuration, the wafer may now be removed from vacuum and transferred to the next operation. This next operation may, for example, be a silicon nitride deposition or a photoresist operation. If silicon nitride or silicon dioxide is required to accomplish the subsequent photoresist and etch operations, then either of these materials may also be deposited under the same pumpdown or vacuum. With reference to Figs. 30 and 31, the metal deposited in the previous operation may now be patterned using photoresist techniques. The resulting IC structure is shown in Figs. 30 and 31. In essence, this operation forms the top electrode metal stripes 123-125, and the circuit and bonding pad interconnects as shown at 126 and 127. Fig. 32 shows a cross section of the resulting KNO- cell. It is important to note that the overetch has removed the silicon nitride surface 102 down and away from the KNO.. edge as at area 119 so that the stripe metal 123 contacts the exposed edge 120 of the KNO- above the corner of the step. This avoids step coverage problems which otherwise would be likely to occur at this corner. In this manner, the K O, is removed from the problem area. If desired, scratch protect (passivation) glass and bonding pad (photoresist) cuts may follow, as required, to complete the IC structure. It should be noted that the top electrodes 123-125 encapsulate their associated KNO- cells, and at the same time form the interconnects to the underlying decode circuitry. While the present invention has been particularly shown and described with reference to some preferred embodiments thereof, it should be understood by those skilled in the art that various changes in form, techniques, operations and details may be made therein without departing from the spirit and scope of the present invention.

Claims: CLAIMS - 1 - A method of making an integrated ferroelectric device, comprising the steps of: (a) forming a first layer (73) of a non-conductive material proximal to decode circuitry (68) of an integrated circuit (60) ; (b) forming a plurality of channels (74-80) through said first layer (73) of non-conductive material; (c) forming trenches (89-95) in said first layer (73) of non-conductive material proximal to said plurality of channels (74-80) ; (d) completely filling said plurality of channels (74-80) and partially filling said trenches (89-95) with a first conductive material (98) ; (e) filling voids in said trenches (89-95) with a second non-conductive material (99) ; (f) planarizing the upper surface (100) of said first layer (73) of non-conductive material, said first conductive material (98) , and said second non-conductive material (99) ; (g) forming a second layer (102) of non-conductive material on said planarized upper surface (100) of said first layer (73) of non-conductive material, said first conductive material (98) and said second non-conductive material (99); (h) forming a plurality of passages (103-113) through said second layer (102) of non-conductive material proximal to said trenches (89-95); (i) forming a layer (116) of ferroelectric material to overlie said second layer (102) of non-conductive material and at least a portion of said first conductive material (98); (j) forming a second layer (117) of conductive material to overlie said layer (116) of ferroelectric material; (k) removing undesired portions of said second layer (117) of conductive material, and said (116) of ferroelectric material, and said second layer (102) of non-conductive material; (1) forming a third layer of conductive material to overlie the remainder of said second layer (117) of conductive material and of said second layer (102) of non-conductive material, and exposed portions of said layer (116) of ferroelectric material and of said first conductive material (98) ; and (m) removing undesired portions of said third layer of conductive material. - 2 - A method according to claim 1, wherein: said layer of ferroelectric material comprises Phase III potassium nitrate. - 3 - A method according to claim 1, wherein: said steps (i) through (1) are performed under vacuum conditions. _ 4 _ A method according to claim 2, wherein: said steps (i) through (1) are performed under vacuum conditions. - 5 - A method according to claim 1, wherein: the aforesaid steps are performed so that the entire lowermost surface of each remaining portion of said layer (116) of ferroelectric material is contiguous with said planarized upper surface (100) of said first conductive material (98) , the complete upper surface of each said remaining portion of said layer (116) of ferroelectric material is contiguous with and covered by said remainder (121) of said second layer (117) of conductive material, said exposed portions (120) of each said remaining portion of said layer (116) of ferroelectric material is contiguous with and covered by an associated remaining portion (123) of said third layer of conductive material, and the remaining surface of each said remaining portion of said layer (116) of ferroelectric material is contiguous with and sealed by said remainder of said second layer (102) of non-conductive material. - 6 - A method according to claim 2, wherein: the aforesaid steps are performed so that the entire lowermost surface of each remaining portion of said layer (116) of ferroelectric material is contiguous with said planarized upper surface (100) of said first conductive material (98) , the complete upper surface of each said remaining portion of said layer (116) of ferroelectric material is contiguous with and covered by said remainder (121) of said second_ layer (117) of conductive material, said exposed! portions (120) of each said remaining portion of said layer (116) of ferroelectric material is contiguous with and covered by an associated remaining portion (123) of said third layer of conductive material, and the remaining surface of each said remaining portion of said layer (116) of ferroelectric material is contiguous with and sealed by said remainder of said second layer (102) of non-conductive material. - 7 - A method according to claim 3, wherein: the aforesaid steps are performed so that the entire lowermost surface of each remaining portion of said layer (116) of ferroelectric material is contiguous with said planarized upper surface (100) of said first conductive material (98) , the complete upper surface of each said remaining portion of said layer (116) of ferroelectric material is contiguous with and covered by said remainder (121) of said second layer (117) of conductive 2 1 material, said exposed portions (120) of each said remaining portion of said layer (116) of ferroelectric material is contiguous with and covered by an associated remaining • portion (123) of said third layer of conductive material, and the remaining surface of each said remaining portion of said layer (116) of ferroelectric material is contiguous with and sealed by said remainder of said second layer (102) of non-conductive material. - 8 - A method according to claim 4, wherein: the aforesaid steps are performed so that the entire lowermost surface of each remaining portion of said layer (116) of ferroelectric material is contiguous with said planarized upper surface (100) of said first conductive material (98) , the complete upper surface of each said remaining portion of said layer (116) of ferroelectric material is contiguous with and covered by said remainder (121) of said second layer (117) of conductive material, said exposed portions (120) of each said remaining portion of said layer (116) of ferroelectric material is contiguous with and covered by an associated remaining portion (123) of said third layer of conductive material, and the remaining surface of each .-aid remaining portion of said layer (116) of ferroelectric material is contiguous with and sealed by said remainder of said second layer (102) of non-conductive material. - 9 - A method according to claim 1, wherein: the aforesaid steps are performed to produce a ferroelectric memory array (69) which is surrounded by said decode circuitry (70) of said integrated circuit (60) . - 10 - A method according to claim 8, wherein: t 22 the aforesaid steps are performed to produce a ferroelectric memory array (69) which is surrounded by said decode circuitry (70) of said integrated circuit (60). - 11 - A method according to claim 1, wherein: the aforesaid steps are performed to produce a ferroelectric memory array which is disposed on and electrically connected to said decode circuitry (68) by way of said first conductive material (98) and portions of said third layer of conductive material. - 12 - A method according to claim 8, wherein: the aforesaid steps are performed to produce a ferroelectric memory array which is disposed on and electrically connected to said decode circuitry (68) by way of said first conductive material (98) and portions of said third layer of conductive material. - 13 - A method according to claim .1, wherein: the aforesaid steps are performed to produce a ferroelectric memory array having bottom electrodes formed of said first conductive material (98) in predetermined trenches (89, 90) of said trenches (89-95), and having top electrodes (123-125) oriented substantially orthogonal to said bottom electrodes and being formed from predetermined remaining portions of said third layer of conductive material; said step (a) forms said first layer (73) of non-conductive material having a thickness in the range of approximately 8 to 12KA to both planarize at least a portion of the upper surface of said integrated circuit (60) and to provide sufficient dielectric isolation between upper conductors (61-64) of said decode circuitry (68) and said bottom electrodes of said ferroelectric memory array; said steps (c) and (d) are performed by deposition of photoresist material, exposing said photoresist material to a predetermined pattern, developing the exposed photoresist material, etching of said trenches (89-95) , deposition of said first conductive material (98) , and immersion of the resulting assemblage in a predetermined chemical solution to lift off the remaining photoresist (81) and excess first conductive material (98) to leave remaining first conductive material (98) completely filling said plurality of channels (74-80) and partially filling said trenches (89-95); while performing said step (e) a layer of said second non-conductive material (99) is deposited over the entire assemblage; said step (f) is carried out by plasma etching back to said uppermost surface (100) of said first layer (73) of non-conductive material; said step (k) is performed by depositing under -vacuum over said second layer (117) of conductive material a third layer (118) of non-conductive material which is subjected to a photoresist etching operation in such a manner that after the removal of the photoresist the pattern is transferred to said third layer (118) of non-conductive material, and thereafter the entire assemblage is ion milled in vacuum such that the pattern in said third layer (118) of non-conductive material is transferred to the underlying layers, and whereby the ion milling removes the entire third layer (118) of non-conductive material and selectively etches said second layer (117) of conductive material and said layer (116) of ferroelectric material, and over etches said second layer (102) of non-conductive material. - 14 - A method according to claim 2, wherein: the aforesaid steps are performed to produce a ferroelectric memory array having bottom electrodes formed of said first conductive material (98) in predetermined trenches (89, 90) of said trenches (89-95), and having top electrodes (123-125) oriented substantially orthogonal to said bottom electrodes and being formed from predetermined remaining portions of said third layer of conductive material; said step (a) forms said first layer (73) of non-conductive material having a thickness in the range of approximately 8 to 12KA to both planarize at least a portion of the upper surface of said integrated circuit (60) and to provide sufficient dielectric isolation between upper conductors (61-64) of said decode circuitry (68) and said bottom electrodes of said ferroelectric memory array; said steps (c) and (d) are performed by deposition of photoresist material, exposing said photoresist material to a predetermined pattern, developing the exposed photoresist material, etching of said trenches (89-95) , deposition of said first conductive material (98) , and immersion of the resulting assemblage in a predetermined chemical solution to lift off the remaining photoresist (81) and excess first conductive material (98) to leave remaining first conductive material (98) completely filling said plurality of channels (74-80) and partially filling said trenches (89-95) ; while performing said step (e) a layer of said second non-conductive material (99) is deposited over the entire assemblage; said step (f) is carried out by plasma etching back to said uppermost surface (100) of said first layer (73) of non-conductive material; said step (k) is performed by depositing under vacuum over said second layer (117) of conductive material a third layer (118) of non-conductive material which is subjected to a photoresist etching operation in such a manner that after the removal of the photoresist the pattern is transferred to said third layer (118) of non-conductive material, and thereafter the entire assemblage is ion milled in vacuum such that the pattern in said third layer (118) of non-conductive material is transferred to the underlying layers, and whereby the ion milling removes the entire third layer (118) of non-conductive material and selectively etches said second layer (117) of conductive material and said layer (116) of ferroelectric material, and over etches said second layer (102) of non-conductive material. - 15 - A method according to claim 3, wherein: the aforesaid steps are performed to produce a ferroelectric memory array having bottom electrodes formed of said first conductive material (98) in predetermined trenches (89, 90) of said trenches (89-95), and having top electrodes (123-125) oriented substantially orthogonal to said bottom electrodes and being formed from predetermined remaining portions of said third layer of conductive material; said step (a) forms said first layer (73) of ■ non-conductive material having a thickness in the range of approximately 8 to 12KA to both planarize at least a portion of the upper surface of said integrated circuit (60) and to provide sufficient dielectric isolation between upper conductors (61-64) of said decode circuitry (68) and said bottom electrodes of said ferroelectric memory array; said steps (c) and (d) are performed by deposition of photoresist material, exposing said photoresist material to a predetermined pattern, developing the exposed photoresist material, etching of said trenches (89-95) , deposition of said first conductive material (98) , and immersion of of the resulting assemblage in a predetermined chemical solution to lift off the remaining photoresist (81) and excess first conductive material (98) to leave remaining first conductive material (98) completely filling said plurality of channels (74-80) and partially filling said trenches (89-95); t 26 while performing said step (e) a layer of said second non-conductive material (99) is deposited over the entire assemblage; said step (f) is carried out by plasma etching back to said uppermost surface (100) of said first layer (73) of non-conductive material; said step (k) is performed by depositing under vacuum over said second layer (117) of conductive material a third layer (118) of non-conductive material which is subjected to a photoresist etching operation in such a manner that after the removal of the photoresist the pattern is transferred to said third layer (118) of non-conductive material, and thereafter the entire assemblage is ion milled in vacuum such that the pattern in said third layer (118) of non-conductive material is transferred to the underlying layers, and whereby the ion milling removes the entire third layer (118) of non-conductive material and selectively etches said second layer (117) of conductive material and said layer (116) of ferroelectric material, and over etches said second layer (102) of non-conductive material. - 16 - A method according to claim 4, wherein: the aforesaid steps are performed to produce a ferroelectric memory array having bottom electrodes formed of said first conductive material (98) in predetermined trenches (89, 90) of said trenches (89-95), and having top electrodes (123-125) oriented substantially orthogonal to said bottom electrodes and being formed from predetermined remaining portions of said third layer of conductive material; said step (a) forms said first layer (73) of non-conductive material having a thickness in the range of approximately 8 to 12KA to both planarize at least a portion of the upper surface of said integrated circuit (60) and to provide sufficient dielectric isolation between upper conductors (61-64) of said decode circuitry (68) and said bottom electrodes of said ferroelectric memory array; said steps (c) and (d) are performed by deposition of photoresist material, exposing said photoresist material to a predetermined pattern, developing the exposed photoresist material, etching of said trenches (89-95) , deposition of said first conductive material (98) , and immersion of of the resulting assemblage in a predetermined chemical solution to lift off the remaining photoresist (81) and excess first conductive material (98) to leave remaining first conductive material (98) completely filling said plurality of channels (74-80) and partially filling said trenches (89-95); while performing said step (e) a layer of said second non-conductive material (99) is deposited over the entire assemblage; said step (f) is carried out by plasma etching back to said uppermost surface (100) of said first layer (73) of non-conductive material; said step (k) is performed by depositing under vacuum over said second layer (117) of conductive material a third layer (118) of non-conductive material which is subjected to a photoresist etching operation in such a manner that after the removal of the photoresist the pattern is transferred to said third layer (118) of non-conductive material, and thereafter the entire assemblage is ion milled in vacuum such that the pattern in said third layer (118) of non-conductive material is transferred to the underlying layers, and whereby the ion milling removes the entire third layer (118) of non-conductive material and selectively etches said second layer (117) of conductive material and said layer (116) of ferroelectric material, and over etches said second layer (102) of non-conductive material. - 17 - A method according to claim 5, wherein: the aforesaid steps are performed to produce a ferroelectric memory array having bottom electrodes formed of said first conductive material (98) in predetermined trenches (89, 90) of said trenches (89-95) and having top electrodes (123-125) oriented substantially orthogonal to said bottom electrodes and being formed from predetermined remaining portions of said third layer of conductive material; said step (a) forms said first layer (73) of non-conductive material having a thickness in the range of approximately 8 to 12KA to both planarize at least a portion of the upper surface of said integrated circuit (60) and to provide sufficient dielectric isolation between conductors (61-64) of said decode circuitry (68) and said bottom electrodes of said ferroelectric memory array; said steps (c) and (d) are performed by deposition of photoresist material, exposing said photoresist material to a predetermined pattern, developing the exposed photoresist material,- etching of said trenches (89-95) , deposition of said first conductive material (98) , and immersion of of the resulting assemblage in a predetermined chemical solution to lift off the remaining photoresist (81) and excess first conductive material (98) to leave remaining first conductive material (98) completely filling said plurality of channels (74-80) and partially filling said trenches (89-95); while performing said step (e) a layer of said second non-conductive material (99) is deposited over the entire assemblage; said step (f) is carried out by plasma etching back to said uppermost surface (100) of said first layer (73) of non-conductive material; said step (k) is performed by depositing under vacuum over said second layer (117) of conductive material a third layer (118) of non-conductive material which is subjected to a photoresist etching operation in such a manner that after the removal of the photoresist the pattern is transferred to said third layer (118) of non-conductive material, and thereafter the entire assemblage is ion milled in vacuum such that the pattern in said third layer (118) of non-conductive material is transferred to the underlying layers, and whereby the ion milling removes the entire third layer (118) of non-conductive material and selectively etches said second layer (117) of conductive material and said layer (116) of ferroelectric material, and over etches said second layer (102) of non-conductive material. - 18 - A method according to claim 6, wherein: the aforesaid steps are performed to produce a ferroelectric memory array having bottom electrodes formed of said first conductive material (98) in predetermined trenches (89, 90) of said trenches (89-95) and having top electrodes (123-125) oriented substantially orthogonal to said bottom electrodes and being formed from predetermined remaining .portions of said third layer of conductive material; said step (a) forms said first layer (73) of non-conductive material having a thickness in the range of approximately 8 to 12KA to both planarize at least a portion of the upper surface of said integrated circuit (60) and to provide sufficient dielectric isolation between upper conductors (61-64) of said decode circuitry (68) -and said bottom electrodes of said ferroelectric memory array; said steps (c) and (d) are performed by deposition' of photoresist material, exposing said photoresist material to a predetermined pattern, developing the exposed photoresist material, etching of said trenches (89-95) , deposition of said first conductive material (98) , and immersion of of the resulting assemblage in a predetermined chemical solution to lift off the remaining photoresist (81) and excess first conductive material (98) to leave remaining first conductive material (98) completely filling said plurality of 1 30 channels (74-80) and partially filling said trenches (89-95); while performing said step (e) a layer of said second non-conductive material (99) is deposited over the entire assemblage; said step (f) is carried out by plasma etching back to said uppermost surface (100) of said first layer (73) of non-conductive material; said step (k) is performed by depositing under vacuum over said second layer (117) of conductive material a third layer (118) of non-conductive material which is subjected to a photoresist etching operation in such a manner that after the removal of the photoresist the pattern is transferred to said third layer (118) of non-conductive material, and thereafter the entire assemblage is ion milled in vacuum such that the pattern in said third layer (118) of non-conductive material is transferred to the underlying layers, and whereby the ion milling removes the entire third layer (118) of non-conductive material and selectively etches said second layer (117) of conductive material and said layer (116) of ferroelectric material, and over etches said second layer (102) of non-conductive material. - 19 - An integrated ferroelectric device, comprising: (a) a first non-conductive layer (73) ; (b) said first non-conductive layer (73) having at least one contact channel (77) therein; (c) a trench (90) formed near the upper portion of said contact channel (77) ; (d) a first conductive material (98) disposed within said contact channel (77) and said trench (90) ; (e) a second non-conductive material (101) disposed in said trench (90) between said first conductive material (98) in said trench (90) and the side walls (97) of said trench (90) ; 31 (f) a planarized top surface (100) of said first non-conductive layer (73) , said second non-conductive material (101) , and said first conductive material (98) ; (g) a ferroelectric layer (116) having at least a portion.which is contiguous with at least a portion of said planarized top surface (100) of said first conductive material (98) ; (h) a second non-conductive layer (102) disposed on top of said planarized top surface (100) of said first non-conductive layer (73) and of said second non-conductive material (101) , and on top of at least a portion of said planarized top surface (100) of said first conductive material (98); (i) a second conductive material (117) disposed on top of said ferroelectric layer (116) ; (j) cell side walls (122) formed by a portion of said second non-conductive layer (102) , a portion (120) of said ferroelectric layer (116) , and a portion of said second conductive material (117) ; and (k) a third conductive material (123) disposed on top of a predetermined portion (121) of said second conductive material (117) and a portion of said second non-conductive layer (102) , and encapsulating said cell side walls (122) . - 20 - A ferroelectric memory cell, comprising: an elongated bottom electrode having its major elongated central axis disposed substantially horizontally in a first predetermined direction, and having at least a portion of its top surface planarized; a concave-shaped ferroelectric element having at least a portion of its lowermost surface contiguous with said planarized portion of said bottom electrode; said concave-shaped ferroelectric element being completely sealed by a cap metal, a non-conductive material, and a top electrode; said cap metal completely filling the concavity of said concave-shaped ferroelectric element and covering the entire upper surface of said concave-shaped ferroelectric element; said non-conductive material being contiguous with and sealing the major portion of the outer side walls of said concave-shaped ferroelectric element except for an upper outer side portion of said concave-shaped ferroelectric element; and said top electrode having its major elongated central axis disposed substantially horizontally and arranged substantially orthogonal to said first predetermined direction, and having a cap-like portion which encapsulates and covers said cap metal and said upper outer side portion of said concave-shaped ferroelectric element. - 21 - A method of making an integrated ferroelectric device, comprising the steps of: forming a first layer of -a non-conductive material; forming trenches in said first layer of non-conductive material; at least partially filling each of said trenches with a first conductive material, the top of said first conductive material being coplanar with or above the top of said first layer; planarizing the upper surface of said first layer of non-conductive material and said first conductive material; and, forming a layer of ferroelectric material on at least a portion of said first conductive material. - 22 - A method according to claim 21, including the steps of: (a) forming said first layer (73) of a non-conductive material proximal to decode circuitry (68) of an integrated circuit (60) ; (b) forming a plurality of channels (74-80) through said first layer (73) of non-conductive material; (c) forming said trenches (89-95) in said first layer (73) of non-conductive material proximal to said plurality of channels (74-80) ; (d) completely filling said plurality of channels (74-80) and partially filling said trenches (89-95) with said first conductive material (98) ; (e) filling voids in said trenches (89-95) with a second non-conductive material (99) ; (f) planarizing the upper surface (100) of said first layer (73) of non-conductive material, said first conductive material (98) , and said second non-conductive material (99) ; (g) forming a second layer (102) of non-conductive material on said planarized upper surface (100) of said first layer (73) of non-conductive material, said first conductive material (98) and said second non-conductive material (99); (h) forming a plurality of passages (103-113) through said second layer (102) of non-conductive material proximal to said trenches (89-95); (i) forming said layer (116) of ferroelectric material to overlie said second layer (102) of non-conductive material and at least said portion of said first conductive material (98); (j) forming a second layer (117) of conductive material to overlie said layer (116) of ferroelectric material; (k) removing undesired portions of said second layer (117) of conductive material, and said (116) of ferroelectric material, and said second layer (102) of non-conductive material; (1) forming a third layer of conductive material to overlie the remainder of said second layer (117) of conductive material and of said second layer (102) of non-conductive material, and exposed portions of said layer (116) of ferroelectric material and of said first conductive material (98); and 34 (πι) removing undesired portions of said third layer of conductive material. - 23 - A method according to claim 21, wherein: said layer of ferroelectric material comprises Phase III potassium nitrate. - 24 - A method according to claim 22, wherein: said steps (i) through (1) are performed under vacuum conditions. - 25 - A method according to claim 22, wherein: the aforesaid steps are performed so that the entire lowermost surface of each remaining portion of said layer (116) of ferroelectric material is contiguous with said planarized upper surface (100) of said first conductive material (98) , the complete upper surface of each said remaining portion of said layer (116) of ferroelectric material is contiguous with and covered by said remainder (121) of said second layer (117) of conductive material, said exposed portions (120) of each said remaining portion of said layer (116) of ferroelectric material is contiguous with and covered by an associated remaining portion (123) of said third layer of conductive material, and the remaining surface of each said remaining portion of said layer (116) of ferroelectric material is contiguous with and sealed by said remainder of said second layer (102) of non-conductive material. - 26 - A method according to claim 24, wherein: the aforesaid steps are performed so that the entire lowermost surface of each remaining portion of said layer (116) of ferroelectric material is contiguous with 35 said planarized upper surface (100) of said first conductive material (98) , the complete upper surface of each said remaining portion of said layer (116) of ferroelectric material is contiguous with and covered by said remainder (121) of said second layer (117) of conductive material, said exposed portions (120) of each said remaining portion of said layer (116) of ferroelectric material is contiguous with and covered by an associated remaining portion (123) of said third layer of conductive material, and the remaining surface of each said remaining portion of said layer (116) of ferroelectric material is contiguous with and sealed by said remainder of said second layer (102) of non-conductive material. - 27 - A method according to claim 21, wherein: the aforesaid steps are performed to produce a ferroelectric memory array (69) which is surrounded by decode circuitry (70) of an integrated circuit (60) . ' • - 28 - A method according to claim 22, wherein: the aforesaid steps are performed to produce a ferroelectric memory array (69) which is surrounded by said decode circuitry (70) of said integrated circuit (60) . - 29 - A method according t'o claim 22, wherein: the aforesaid steps are performed to produce a ferroelectric memory array which is disposed on and electrically connected to said decode circuitry (68) by way of said fir " st conductive material (98) and portions of said third layer of conductive material. - 30 - A method according to claim 24, wherein: the aforesaid steps are performed to I produce a ferroelectric memory array which is disposed on and electrically connected to said decode circuitry (68) by way of said first conductive material (98) and portions of said third layer of conductive material. - 31 - A method according to claim 22, wherein: the aforesaid steps are performed to produce a ferroelectric memory array having bottom electrodes formed of said first conductive material (98) in predetermined trenches (89, 90) of said trenches (89-95), and having top electrodes (123-125) oriented substantially orthogonal to said bottom electrodes and being formed from predetermined remaining portions of said third layer of conductive material; said step (a) forms said first layer (73) of non-conductive material having a thickness in the range of approximately 8 to 12KA to both planarize at least a portion of the upper surface of said integrated circuit (60) and to provide sufficient dielectric isolation between upper conductors (61-64) of said decode circuitry (68) and said bottom electrodes of said ferroelectric memory array; said steps (c) and (d) are performed by deposition of photoresist material, exposing said photoresist material to a predetermined pattern, developing the exposed photoresist material, etching of said trenches (89-95) , deposition of said first conductive material (98) , and immersion of the resulting assemblage in a predetermined chemical solution to lift off the remaining photoresist (81) and excess first conductive material (98) to leave remaining first conductive material (98) completely filling said plurality of channels (74-80) and partially filling said trenches (89-95) ; while performing said step (e) a layer of said second non-conductive material (99) is deposited over the entire assemblage; said step (f) is carried out by plasma etching back to said uppermost surface (100) of said first layer (73) of non-conductive material; said step (k) is performed by depositing under vacuum over said second layer (117) of conductive material a third layer (118) of non-conductive material which is subjected to a photoresist etching operation in such a manner that after the removal of the photoresist the pattern is transferred to said third layer (118) of non-conductive material, and thereafter the entire assemblage is ion milled in vacuum such that the pattern in said third layer (118) of non-conductive material is transferred to the underlying layers, and whereby the ion milling removes the entire third layer (118) of non-conductive material and selectively etches said second layer (117) of conductive material and said layer (116) of ferroelectric material, and over etches said second layer (102) of non-conductive material. - 32 - A method according to claim 24, wherein: the aforesaid steps are performed to produce a ferroelectric memory array having bottom electrodes formed of said first conductive material (98) in predetermined trenches (89, 90) of said trenches (89-95), and having top electrodes (123-125) oriented substantially orthogonal to said bottom electrodes and being formed from predetermined remaining portions of said third layer of conductive material; said step (a) forms said first layer (73) of non-conductive material having a thickness in the range of approximately 8 to 12KA to both planarize at least a portion of the upper surface of said integrated circuit (60) and to provide sufficient dielectric isolation between upper conductors (61-64) of said decode circuitry (68) and said bottom electrodes of said ferroelectric memory array; said steps (c) and (d) are performed by deposition of photoresist material, exposing said photoresist material to a predetermined pattern, developing the exposed photoresist material, etching of said trenches (89-95) , deposition of said first conductive material (98) , and immersion of the resulting assemblage in a predetermined chemical solution to lift off the remaining photoresist (81) and excess first conductive material (98) to leave remaining first conductive material (98) completely filling said plurality of channels (74-80) and partially filling said trenches (89-95); while performing said step (e) a layer of said second non-conductive material (99) is deposited over the entire assemblage; said step (f) is carried out by plasma etching back to said uppermost surface (100) of said first layer (73) of non-conductive material; said step (k) is performed by depositing under vacuum over said second layer (117) of conductive material a third layer (118) of non-conductive material which is subjected to a photoresist etching operation in such a anner that after the removal of the photoresist the pattern is transferred to ___ said third layer (118) of non-conductive material, and thereafter the entire assemblage is ion milled in vacuum such that the pattern in said third layer (118) of non-conductive material is transferred to the underlying layers, and whereby the ion milling removes the entire third layer (118) of non-conductive material and selectively etches said second layer (117) of conductive material and said layer (116) of ferroelectric material, and over etches said second layer (102) of non-conductive material. - 33 - A method according to claim 25, wherein: the aforesaid steps are performed to produce a ferroelectric memory array having bottom electrodes formed of said first conductive material (98) in predetermined trenches (89, 90) of said trenches (89-95) , and having top electrodes (123-125) oriented substantially orthogonal to I 39 said bottom electrodes and being formed from predetermined remaining portions of said third layer of conductive material; said step (a) forms said first layer (73) of non-conductive material having a thickness in the range of approximately 8 to 12KA to both planarize at least a portion of the upper surface of said integrated circuit (60) and to provide sufficient dielectric isolation between upper conductors (61-64) of said decode circuitry (68) and said bottom electrodes of said ferroelectric memory array; said steps (c) and (d) are performed by deposition of photoresist material, exposing said photoresist material to a predetermined pattern, developing the exposed photoresist material, etching of said trenches (89-95) , deposition of said first conductive material (98) , and immersion of of the resulting assemblage in a predetermined chemical solution to lift off the remaining photoresist (81) and excess first conductive material (98) to leave remaining first conductive material (98) completely filling said plurality of channels (74-80) and partially filling said trenches (89-95); while performing said step (e) a layer of said second non-conductive material (99) is deposited over the entire assemblage; said step (f) is carried out by plasma etching back to said uppermost surface (100) of said first layer (73) of non-conductive material; said step (k) is performed by depositing under vacuum over said second layer (117) of conductive material a third layer (118) of non-conductive material which is subjected to a photoresist etching operation in such a manner that after the removal of the photoresist the pattern is transferred to said third layer (118) of non-conductive material, and thereafter the entire assemblage is ion milled in vacuum such that the pattern in said third layer (118) of non-conductive material is transferred to the underlying layers, and whereby the ion milling removes the entire third t 40 layer (118) of non-conductive material and selectively etches said second layer (117) of conductive material and said layer (116) of ferroelectric material, and over etches said second layer (102) of non-conductive material. - 34 - A method according to claim 26, wherein: the aforesaid steps are performed to produce a ferroelectric memory array having bottom electrodes formed of said first conductive material (98) in predetermined trenches (89, 90) of said trenches (89-95), and having top electrodes (123-125) oriented substantially orthogonal to said bottom electrodes and being formed from predetermined remaining portions of said third layer of conductive material; said step (a) forms said first layer (73) of non-conductive material having a thickness in the range of approximately 8 to 12KA to both planarize at least a portion of the upper surface of said integrated circuit (60) and to provide sufficient dielectric isolation between upper conductors (61-64) of # said decode circuitry (68) and said bottom electrodes of said ferroelectric memory array; said steps (c) and (d) are performed by deposition of photoresist material, exposing said photoresist material to a predetermined pattern, developing the exposed photoresist material, etching of said trenches (89-95) , deposition of said first conductive material (98) , and immersion of of the resulting assemblage in a predetermined chemical solution to lift off the remaining photoresist (81) and excess first conductive material (98) to leave remaining first conductive material (98) completely filling said plurality of channels (74-80) and partially filling said trenches (89-95); while performing said step (e) a layer of said second non-conductive material (99) is deposited over -the entire assemblage; sai 1d step (f) is carr 1 ied out by plasma etching back to said uppermost surface (100) of said first layer (73) of non-conductive material; said step (k) is performed by depositing under vacuum over said second layer (117) of conductive material a third layer (118) of non-conductive material which is subjected to a photoresist etching operation in such a manner that after the removal of the photoresist the pattern is transferred to said third layer (118) of non-conductive material, and thereafter the entire assemblage is ion milled in vacuum such that the pattern in said third layer (118) of non-conductive material is transferred to the underlying layers, and whereby the ion milling removes the entire third layer (118) of non-conductive material and selectively etches said second layer (117) of conductive material and said layer (116) of ferroelectric material, and over etches said second layer (102) of non-conductive material. - 35 - A method according to claim 28, * wherein: the aforesaid steps are performed to produce a ferroelectric memory array having bottom electrodes formed of said first conductive material (98) in predetermined trenches (89, 90) of said trenches (89-95) and having top electrodes (123-125) oriented substantially orthogonal to said bottom electrodes and being formed from predetermined remaining portions of said third layer of conductive material; said step (a) forms said first layer (73) of non-conductive material having a thickness in the range of approximately 8 to 12KA to both planarize at least a portion of the upper surface of said integrated circuit (60) and to provide sufficient dielectric isolation between conductors (61-64) of said decode circuitry (68) and said bottom electrodes of said ferroelectric memory array; said steps (c) and (d) are performed by deposition of photoresist material, exposing said photoresist material to 19 a predetermined pattern, developing the exposed photoresist 20 material, etching of said trenches (89-95) , deposition of 21 said first conductive material (98) , and immersion of of the 22 resulting assemblage in a predetermined chemical solution to 23 lift off the remaining photoresist (81) and excess first 24 conductive material (98) to leave remaining first conductive 25 material (98) completely filling said plurality of 26 channels (74-80) and partially filling said 27 trenches (89-95); 28 while performing said step (e) a layer of said second 29 non-conductive material (99) is deposited over the entire 30 assemblage; 31 said step (f) is carried out by plasma etching back to 32 said uppermost surface (100) of said first layer (73) of 33 non-conductive material; 34 said step (k) is performed by depositing under vacuum 3.5 over said second layer (117) of conductive material a third 36 layer (118) of non-conductive material which is subjected to 37 a photoresist etching operation in such a manner that after 38 the removal of the photoresist the pattern is transferred to 39 said third layer (118) of non-conductive material, and 40 thereafter the entire assemblage is ion milled in vacuum 41 such that the pattern in said third layer (118) of 42 non-conductive material is transferred to the underlying 43 layers, and whereby the ion milling removes the entire third 44 layer (118) of non-conductive material and selectively 45 etches said second layer (117) of conductive material and 46 said layer (116) of ferroelectric material, and over etches 47 said second layer (102) of non-conductive material. - 36 - 1 A method according to claim 29, wherein: 2 the aforesaid steps are performed to produce a 3 ferroelectric memory array having bottom electrodes formed 4 of said first conductive material (98) in predetermined 5 trenches (89, 90) of said trenches (89-95) and having top 6 electrodes (123-125) oriented substantially orthogonal to 43 7 said bottom electrodes and being formed from predetermined 8 remaining portions of said third layer of conductive 9 material; 10 said step (a) forms said first layer (73) of 11 non-conductive material having a thickness in the range of 12 approximately 8 to 12KA to both planarize at least a portion 13 of the upper surface of said integrated circuit (60) and to 14 provide sufficient dielectric isolation between upper 15 conductors (61-64) of said decode circuitry (68) and said 16 bottom electrodes of said ferroelectric memory array; 17 said steps (c) and (d) are performed by deposition of 18 photoresist material, exposing said photoresist material to 19 a predetermined pattern, developing the exposed photoresist 20 material, etching of said trenches (89-95) , deposition of 21 said first conductive material (98) , and immersion of of the 22 resulting assemblage in a predetermined chemical solution to 23 lift off the remaining photoresist (81) and excess first 24 conductive material (98) to leave remaining"first conductive 25 material (98) completely filling said plurality of 26 channels (74-80) and partially filling said 27 trenches (89-95) ; 28 while performing said step (e) a layer of said second 29 non-conductive material (99) is deposited over the entire 30 assemblage; 31 said step (f) is carried out by plasma etching back to 32 said uppermost surface (100) of said ' first layer ' (73) of 33 non-conductive material; 34 said step (k) is performed by depositing under vacuum 35 over said second layer (117) of conductive material a third 36 layer (118) of non-conductive material which is subjected to 37 a photoresist etching operation in such a manner that after , 38 the removal of the photoresist the pattern is transferred to 39 said third layer (118) of non-conductive material, and . 40 thereafter the entire assemblage is ion milled in vacuum 41 such that the pattern in said third layer (118) of 42 non-conductive material is transferred to the underlying 43 layers, and whereby the ion milling removes the entire third 44 layer (118) of non-conductive material and selectively etches said second layer (117) of conductive material and said layer (116) of ferroelectric material, and over etches said second layer (102) of non-conductive material. - 37 - An integrated ferroelectric device, comprising: a first non-conductive layer;. a trench formed in the upper portion of said first non-conductive layer; a first conductive material disposed within said trench, the upper surfaces of said first conductive material and the portions of said first non-conductive layer on either side of said trench being substantially coplanar; and, a ferroelectric layer at least a portion of which is continuous with at least a portion of the upper surface of said first non-conductive layer. •f - 38 - An integrated ferroelectric device according to claim 37, including: said first non-conductive layer (73) having at least one contact channel (77) therein; said trench (90) being formed near the upper portion of said contact channel (77) ; said first conductive material (98) being disposed within said contact channel (77) and said'trench (90) ; said second non-conductive material (101) disposed in said trench (90) between said first conductive material (98) in said trench (90) and the side walls (97) of said trench (90); said coplanar upper surfaces comprising a planarized top surface (100) of said first non-conductive layer (73) , said second non-conductive material (101) , and said first conductive material (98) ; 45 said ferroelectric layer (116) having at least a 3 portion which is contiguous with at least a portion of said 9 planarized top surface (100) of said first conductive 0 material (98) ; i (h) a second non-conductive layer (102) disposed on top 2 of said planarized top surface (100) of said first 3 non-conductive layer (73) and of said second non-conductive 4 material (101) , and on top of at least a portion of said 5 planarized top surface (100) of said first conductive 6 material (98) ; 7 (i) a second conductive material (117) disposed on top 8 of said ferroelectric layer (116) ; 9 (j) cell side walls (122) formed by a portion of said 0 second non-conductive layer (102) , a portion (120) of said 1 ferroelectric layer (116) , and a portion of said second 2 conductive material (117) ; and 3 (k) a third conductive material (123) disposed on top 4 of a predetermined portion (121) of said second conductive 5 material (117) and a portion of said second non-conductive 6 layer (102) , and encapsulating said cell side walls (122) . - 39 - 1 A method of fabricating a combined integrated 2 circuit/ferroelectric memory device, comprising the steps 3 of: 4 (a) removing predetermined portions of a surface of an 5 integrated circuit for providing contacts with the 6 input/output logic of said integrated circuit; 7 (b) depositing a first conductive layer; 8 (c) removing undesired portions of said first 9 conductive layer; 0 (d) depositir. a ferroelectric layer; 1 (e) depositing a second conductive layer; 2 (f) removing undesired portions of said ferroelectric 3 layer and said second conductive layer; 4 (g) depositing a passivation layer; 46 (h) removing undesired portions of said passivation layer; (i) depositing a third conductive layer for electrically connecting said second conductive layer to said input/output logic of said integrated circuit; and (j) removing undesired portions of said third conductive layer. - 40 - A method according to claim 39, wherein: said ferroelectric layer comprises Phase III potassium nitrate. - 41 - A method according to claim 39, wherein: said step of depositing said ferroelectric layer and said step of depositing said second conductive layer are performed under vacuum conditions during the same pumpdown. « - 42 - A method according to claim 40, wherein: said step of depositing said ferroelectric layer and said step of depositing said second conductive layer are performed under vacuum conditions during the same pumpdown. - 43 - A method according to claim 39, wherein: said step of removing undesired portions of said ferroelectric layer and said second conductive layer is performed at least partially by means of ion milling. - 44 - A method according to claim 40, wherein: said step of removing undesired portions of said ferrolectric layer and said second conductive layer is performed at least partially by means of ion milling. - 45 - A method according to claim 41, wherein: said step of removing undesired portions of said ferroelectric layer and said second conductive layer is performed at least partially by means of ion milling. - 46 - A method according to claim 42, wherein: said step of removing undesired portions of said ferroelectric layer and said second conductive layer is performed at least partially by means of ion milling. - 47 - A method according to claim 39, wherein: after said step of depositing said second conductive layer, there is performed a step of applying photoresist to define a single memory cell at each crossover point between said first and second conductive layers; and thereafter there is performed the step of ion milling off of said ferroelectric layer and said second conductive layer except where the photoresist defines the memory cell pattern; and thereafter the remaining resist is ashed off; and said steps of ion milling and ashing off remaining resist, and depositing said passivation layer are all conducted under vacuum conditons during a single pumpdown. - 48 - A method according to claim 40, wherein: after said step of depositing said second conductive layer, there is performed a step of applying photoresist to define a single memory cell at each crossover point between said first and second conductive layers; and thereafter there is performed the step of ion milling off of said ferroelectric layer and said second conductive layer except where the photoresist defines the memory cell pattern; and thereafter the remaining resist is ashed off; and said steps of ion milling and ashing off remaining resist, and depositing said passivation layer are all conducted under vacuum conditions during a single pumpdown. - 49 - A method according to claim 41, wherein: after said step of depositing said second conductive layer, there is performed a step of applying photoresist to define a single memory cell at each crossover point between said first and second conductive layers; and thereafter there is performed the step of ion milling off of said ferroelectric layer and said second conductive layer except where the photoresist defines the memory cell pattern; and thereafter the remaining resist is ashed off; and said steps of ion milling and ashing off remaining resist, and depositing said passivation layer are all conducted under vacuum conditions during a single pumpdown. - 50 - A method according to claim 42, wherein: after said step of depositing said second conductive layer, there is performed a step of applying photoresist to define a single memory cell at each crossover point between said first and second conductive layers; and thereafter there is performed the step of ion milling off of said ferroelectric layer and said second conductive layer except where the photoresist defines the memory cell pattern; and thereafter the remaining resist is ashed off; and said steps of ion milling and ashing off remaining resist, and depositing said passivation layer are all conducted under vacuum conditions during a single pumpdown. - 51 - A method according to claim 43, wherein: . ( 49 after said step of depositing said second conductive layer, there is performed a step of applying photoresist to define a single memory cell at each crossover point between said first and second conductive layers; and thereafter there is performed the step of ion milling off of said ferroelectric layer and said second conductive layer except where the photoresist defines the memory cell pattern; and thereafter the remaining resist is ashed off; and said steps of ion milling and ashing off remaining resist, and depositing said passivation layer are all conducted under vacuum conditions during a single pumpdown. - 52 - A method according to claim 44, wherein: after said step of depositing said second conductive layer, there is performed a step of applying photoresist to define a single .memory cell at each crossover point between said first and second conductive layers; and thereafter there is performed the step of ion milling off of said ferroelectric layer and said second conductive layer except where the photoresist defines the memory cell pattern; and thereafter the remaining resist is ashed off; and said steps of ion milling and ashing off remaining resist, and depositing said passivation layer are all conducted under vacuum conditions during a single pumpdown. - 53 - A method according to claim 45, wherein: after said step of depositing said second conductive layer, there is performed a step of applying photoresist to define a single memory cell at each crossover point between said first and second conductive layers; and thereafter there is performed the step of ion milling off of said ferroelectric layer and said second conductive layer except where the photoresist defines the memory cell pattern; and thereafter the remaining resist is ashed off; and said steps of ion milling and ashing off remaining resist, and depositing said passivation layer are all conducted under vacuum conditions during a single pumpdown. - 54 - A method according to claim 46, wherein: after said step of depositing said second conductive layer, there is performed a step of applying photoresist to define a single memory cell at each crossover point between said first and second conductive layers; and thereafter there is performed the step of ion milling off of said ferroelectric layer and said second conductive layer except where the photoresist defines the memory cell pattern; and thereafter the remaining resist is ashed off; and said steps of ion milling and ashing off remaining resist, and depositing said passivation layer are all conducted under vacuum conditions during a single pumpdown. - 55 - A method according to claim 40, wherein: said Phase III potassium nitrate ferroelectric layer has a thickness of less than 110 microns. - 56 - A method according to claim 47, wherein: said Phase III potassium nitrate ferroelectric layer has a thickness of less than 110 microns. - 57 - A method according to claim 40, wherein: said Phase III potassium nitrate layer has a thickness within a range of from 100 Angstrom units to 5,000 Angstrom units. - 58 - A method according to claim 47, wherein: said Phase III potassium nitrate layer has a thickness within a range of from 100 Angstrom units to 5,000 Angstrom units. - 59 - A device produced in accordance with the method of any one of the preceding claims 1-18, 21-36 and 39-58.

Inventors: GODFREY BRUCE, MCMILLAN LARRY, O'KEEFE JACK, PAZ DE ARAUJO CARLOS, ROHRER GEORGE A, GODFREY, BRUCE, MCMILLAN, LARRY, O'KEEFE, JACK, PAZ DE ARAUJO, CARLOS, ROHRER, GEORGE, A.
Applicants: RAMTRON CORP, RAMTRON CORPORATION
Application year: 1986
Main classification: G11C11
IPC codes: H01L27