MEMORY CELL

Abstract: A five transistor memory cell (10) that can be reliably read and written from a single data line includes two inverters (INV₁, INV₂) and a pass transistor (N₃). The cell read/write cir­ cuitry includes an address supply voltage source (90) which is maintained at a first level during write and at a second level during read selected to reduce read disturbance. The memory cell read circuitry includes a circuit for precharging the cell data line prior to read. The state of the memory cell is con­ tinuously available at output nodes to control other circuitry even during the read operation.

Description: This invention relates to a memory cell. Reference is now made to the accompanying drawings, in which: Fig. 4 shows a prior art six transistor memory cell. Fig. 4 shows a prior art six-transistor CMOS memory cell similar to the Intel 5101 cell. Transistors T'₁, T'₂, T'₃ and T'₄ constitute a cross-coupled latch that typically draws a steady state current of approximately a nanoampere. Transistors T'₅ and T'₆ are gating devices (pass transistors) that couple the bit lines (data lines) to the latch when the voltage on the row select line (address line) is high (5 volts). The output signal Q is a logical 1 when N channel enhancement mode transistor T'₃ is off and P channel enhancement mode transistor T'₄ is on, and it is a logical zero when these states are reversed. Reading and writing are accomplished through the left and right bit lines. For example to read the data out of the memory cell in Fig. 4, a high signal is applied to the row select, turning on transistors T'₅ and T'₆. If a logical 0 (0 volts) is on node A and a logical 1 (5 volts) is on node B, the left bit line is charged to a lower level than the right bit line. These two bit lines are typically connected to the differential amplifier (not shown) that amplifies the difference in voltage levels on the bit lines. The amplified difference is then interpreted as a logical 0 or a logical 1, according to some design convention. To write a bit into the memory cell, the row select line is brought high (to 5 volts) and the left and right bit lines are charged to opposite states by the write driver (not shown in Fig. 4), which drives node A to the same logic level as the left bit line and node B to the same logic level as the right bit line. This six-transistor memory cell requires two gating devices (pass transistors) and two bit lines to be read and written. Such a six-transistor memory cell can also be implemented in NMOS. See Holt, Electronic Circuits , John Wiley and Sons, Inc., pp. 293-294 (1978). Also, there are known from US-A-3 644 907, US-A-4 208 730 and US-A-4 156 940 memory cells of the kind comprising a first inverter having an input lead and an output lead, a second inverter having an input lead connected to the output lead of the first inverter and having an output lead, and a single pass transistor having a first source/drain, a second source/drain, and a control gate, the second source/drain being connected to the input lead of the first inverter and to the output lead of the second inverter. According to the invention there is provided, in a memory cell of this kind, means for providing to the gate of the pass transistor during reading a first selected voltage approximately equal to the trigger voltage of the first inverter. The memory cell of the invention can include a first and a second output node (lead) continuously providing the state of the memory cell to circuitry external to the memory, for example to control the gates of external pass transistors or to provide an input signal to a logic gate. Typically, a plurality of five-transistor memory cells is connected to the same data line. In accordance with the invention, means can be provided for increasing the rise time on the gate of the pass transistor in order to reduce the possibility of disturbance to the content of the memory cell during the read operation. As another feature of the invention, the trigger point of the first inverter can be selected to be more than one threshold voltage with body effect below the voltage applied to the gate of the pass transistor and channel dimensions of the pass transistor relative to channel dimensions of the N channel and of the P channel transistor in the second inverter can be selected to insure that the memory cell can be successfully written. In accordance with the invention, circuitry can be provided for precharging the data line to a second selected voltage level prior to reading a stored bit in order to reduce read disturbance. Also in accordance with the invention, circuitry can be provided for charging the gate of the pass transistor to a first level write operation and for precharging the data line to a third selected voltage level prior to the read operation. The voltage levels are selected to minimize read disturbance. The invention will thus be understood to provide a five-transistor memory cell which can be reliably read and written from a single data line. The invention will be more readily understood by reference to the following illustrative description and Figs. 1, 2 and 3 of the accompanying drawings, in which: Fig. 1 shows a five-transistor memory cell embodying the invention; Fig. 2 shows a circuit for pre-charging the data line for the memory cell shown in Fig. 1; and Fig. 3 shows an address supply voltage source and an address driver for supplying a first selected voltage level to the address line for the memory cell of Fig. 1 during the read operation and a second selected voltage level during the write operation; Fig. 3 also shows a precharge circuit for precharging the data line to a third selected voltage level prior to the read operation. Fig. 4 shows a prior art 6 transistor memory cell. Fig. 1 shows a memory cell 10 embodying the present invention and comprising N channel enhancement mode pass transistor N₃ and inverters INV₁ and INV₂. Inverter INV₁ includes a P channel enhancement mode transistor N₁. The source 1 of the transistor P₁ is connected to the positive voltage supply having magnitude V CC , which is typically 5 volts plus or minus 10% although other voltages may be employed for V CC . The drain 2 of transistor P₁ is connected to drain 4 of transistor N₁ whose source 5 is connected to ground. Gates 3 and 6 of transistors P₁ and N₁, respectively, are connected to sense node A. The common drains 2 and 4 are connected to output node B. Inverter INV₂ includes a P channel enhancement mode transistor P₂ and an N channel enhancement mode transistor N₂. The source 7 of transistor P₂ is connected to the positive voltage supply having magnitude V CC . The drain 8 of the transistor P₂ is connected to drain 10 of transistor N₂ whose source 11 is connected to ground. Gates 9 and 12 of transistors P₂ and N₂, respectively, are connected to output node B, and drains 8 and 10 are connected to sense node A. In operation the output signal on node B is continuously available to other circuits (not shown in Fig. 1), for example, as a gate control signal for other transistors. Data line D M is connected to sense node A via a pass transistor N₃. Gate 15 of transistor N₃ is controlled by the voltage signal on address line A N . Source/drain 13 of transistor N₃ is connected to data line D M and source/drain 14 of transistor N₃ is connected to sense node A. One advantage of memory cell 10 is that while the signal on output node B is used, typically continuously, to control other circuits (not shown in Fig. 1), the content of memory cell 10 (i.e. the signal stored on node A) can be repeatedly checked by a read operation to verify the integrity of the memory cell's data content without degrading the output signal on node B. Furthermore, if desired, for example if the compliment of the signal on node B is required to control other circuits, sense node A can also be used as an output node. This is indicated by the dotted arrow in Fig. 1. The voltage level at sense node A may be somewhat degraded during the read operation. When sense node A stores a logical 0 and it is desired to write a logical 1 to cell 10, the signal provided at source/drain 14 of transistor N₃ must be sufficient to increase the voltage on sense node A above the trigger point of inverter INV₁ despite the pulldown effect of current flowing through transistor N₂ of inverter INV₂ (the trigger point of an inverter is the voltage at which the gate (input) voltage of the inverter equals the output voltage of the inverter). Conversely, when sense node A stores a logical 1 and it is desired to write a logical 0 to sense node A, the signal provided at source/drain 14 of transistor N₃ must be sufficient to decrease the voltage on sense node A below the trigger point of inverter INV₁ despite the pullup effect of transistor P₂ of inverter INV₂. The operation of writing data into cell 10 and the selection of the parameters for transistors N₁, N₂, N₃, P₁, and P₂ may be understood by considering the following examples. Example 1 Suppose that memory cell 10 stores a logical 0, i.e. the voltage on node A is 0 volts (logical 0) and that the output signal of inverter INV₁ is V CC on data line D M is to be stored on node A and that transistor N₃ is turned on by applying the signal V CC to gate 15. A voltage level of V CC on source/drain 13 and a voltage level of V CC on gate 15 results in a voltage on source/drain 14 not higher than V CC - V TH (N₃). V TH (N₃) is the threshold voltage of transistor N₃ with body effect. Thus the trigger point of inverter INV₁, denoted by V TRIG (INV₁), is selected to be less than V CC - V TH (N₃). This is accomplished by selecting the ratio of the ratio of the channel width to channel length of pullup transistor P₁ to the ratio of channel length of pulldown transistor N₁ of inverter INV₁ to be sufficiently small. For example, if V CC equals 5 volts and the channel width and channel length of transistors N₁ and P₁ are as given in the following table: Transistor Channel Width Channel Length P₁ 5 µm 2.5 µm N₁ 9.75 µm 2.5 µm then the trigger point of inverter INV₁ will be less than 2 volts. Having selected the channel width and channel length of transistors P₁ and N₁ so that the trigger point of inverter INV₁ is less than V CC -V TH (N₃) the channel dimensions of N₂ relative to the channel dimensions of N₃ are selected so that the voltage at node A rises above the trigger point TP of inverter INV₁. When transistor N₃ and N₂ are both on, they act as a voltage divider, and the voltage at sense node A is given by V CC x ( R(N₂)/(R(N₂)+R(N₃))) where R(N₂) is the channel resistance provided by transistor N₂ and R(N₃) is the channel resistance provided by transistor N₃. R(N₂) is directly proportional to L(N₂)/W(N₂) and R(N₃) is directly proportional to L(N₃)/W(N₃) where L(N₂) is the channel length of transistor N₂, W(N₂) is the channel width of transistor N2, L(N₃) is the channel length of transistor N₃ and W(N₃) is the channel width of transistor N₃. By appropriately choosing the channel length and channel widths, we may ensure that V CC x (R(N₂)/(R(N₂)+R(N₃))) is greater than the trigger point TP of inverter INV₁. In one embodiment, the channel length of pass transistor N₃ is 2.5 microns and the channel width is 7.5 microns. Transistor N₂ has a channel length of 4 microns and a channel width of 4 microns. In this case R(N₂)/(R(N₂)+R(N₃)) equals 0.6. Hence the voltage on node A will rise above the trigger point of inverter INV₁. Once the voltage on sense node A rises above the trigger point, V TRIG( INV₁), the output signal on node B goes low and the output signal of inverter INV₂ goes high, driving sense node A to the V CC level. Example 2 In writing a logical 0 to memory cell 10, assume the voltage on data line D M is 0 volts, address lane A N is charged to V CC , and a voltage signal V CC (logical 1) is stored on node A. When both transistors P₂ and N₃ are on, pullup transistor P₂ in inverter INV₂ and transistor N₃ act as a voltage divider and the voltage at sense node A is given by V CC x(R(N₃)/(R(N₃)+R(P₂))) where R(P₂) is the channel resistance provided by transistor N₃. The channel resistance of P₂ is directly proportional to L(P₂)/W(P₂) where L (P₂) is the channel length of transistor P₂ and W(P₂) is the channel width of transistor P₂. The channel resistance of N channel transistor N₃ is directly proportional to L(N₃)/W(N₃) where L(N₃) is the channel length of transistor N₃ and W(N₃) is the channel width of transistor N₃. These channel lengths and widths are chosen so that the voltage on sense node A falls below the trigger point of inverter INV₁. In one embodiment transistor P₂ in inverter INV₂ has a channel length of 4 microns and a channel width of 6 microns. The fraction R(N₃)/(R(N₃)+R(P₂)) equals 0.1. In this case, the voltage on sense node A will fall below the trigger point of inverter INV₁ where the channel dimensions of inverter INV₁ are specified in the above table. Once the voltage on sense node A falls below the trigger point, the output signal on node B goes high and the output signal of inverter INV₂ goes low driving sense node A to 0 volts. The above analysis assumes that the channel resistance of the pullup and pulldown transistors of the write driver (not shown) are significantly smaller (less than 10%) than the channel resistance of transistors P₂, N₂ and N₃. It is also desirable to be able to read the data signal stored on sense node A by transmitting this signal via pass transistor N₃ to data line D M without disturbing the content of the memory. The value read is the value that appears on source/drain 13 of transistor N₃. Typically data line D M , which may be connected to many cells similar to cell 10 of Fig. 1, has a large capacitance compared to the capacitance of sense node A. When address line A N goes high to turn on pass transistor N₃ in order to read the value stored on node A, the content of the memory (the value stored on node A) may be disturbed due to charge sharing. The following techniques can be employed to reduce the danger of disturbing the memory cell during the read operation. First, one may increase the rise time of the address line A N by slowing the rate of increase of the voltage of address line A N . Then transistor N₃ turns on more slowly, allowing memory cell 10 to react to the disturbance caused by charge sharing without changing the content of the data stored on node A. For example, if V CC is stored on node A, the rise time must be sufficiently long that the voltage on node A does not fall to V TRIG (INV₁) when transistor N₃ turns on. If 0 volts is stored on node A, the rise time of the signal on address A N must be sufficiently long for the voltage on node A not to rise to V TRIG (INV₁) when transistor N₃ turns on. A typical address rise time should be 200ns or more. The rise time of address line A N is increased by using a "weak" (small channel width to channel length ratio) pullup transistor (not shown) in the address driver. A second technique for avoiding disturbing the content of call 10 during the read operation is to precharge the data line D M of the value V TRIG (INV₁). Assume line D M is precharged to the value V TRIG (INV₁). Assume also that a read signal of magnitude V CC is applied to address line A N . If V CC (logical 1) is stored on sense node A, then pullup transistor P₂ of inverter INV₂ and pass transistor N₃ form a voltage divider network and sense node A does not fall below V TRIG (INV₁). Similarly, if 0 volts (logical 0) is stored on sense node A, then sense node A does not rise above V TRIG (INV₁), since in this event transistor N₂ and N₃ form a resistor divider network and data line D M is precharged to V TRIG (INV₁). In one embodiment, the circuit shown in Fig. 2 is used to precharge data line D M to V TRIG (INV₁). The V TRIG (INV₁) precharge circuit shown in Figure 2 includes P channel enhancement mode transistor T₁, N channel enhancement mode transistor T₂, and N channel enhancement mode pass transistor T₃. As shown, the source 20 of transistor T₁ is connected to the positive voltage supply V CC . Drain 21 of transistor T₁ is connected to drain 23 of transistor T₂ whose source 24 is connected to ground. Gates 22 and 25 of transistor T₁ and T₂, respectively, are connected to common drain connection of transistors T₁ and T₂ which also connects to drain 26 of pass transistor T₃. Source 27 of transistor T₃ is connected to data line D M and gate 28 of transistor T₃ is connected to precharge signal,  precharge. The "inverter" comprising transistors T₁ and T₂ is designed to have the same trigger point as inverter INV₁, shown in Fig. 1. In the precharge cycle, the precharge signal,  precharge is set to V CC , which turns on N channel pass transistor T₃, and data line D M is precharged to a voltage level of V TRIG (INV₁) (assuming V TRIG (INV₁) is lower than the voltage lever of  precharge is then brought low by control circuitry (not shown), turning off pass transistor T₃ just before the address line A N connected to gate 15 of pass transistor N₃ is brought high. The third technique for avoiding disturbing the content of memory cell 10 during the read operation is to precharge data line D M to V CC and set the high level of address line A N to value V TRIG (INV₁). These conditions are implemented using the circuitry shown in Fig. 3. Under these conditions, when the value stored in cell 10 is V CC (logical 1), pass transistor N₃ remains off and the value sensed at source/drain 13 is V CC (logical 1), and sense node A is undisturbed. On the other hand, when the value stored in cell 10 is 0 volts (logical 0), the highest voltage that sense node A can be charged to is V TRIG (INV₁) - V TH (N₃) since N₃ is cut off when the voltage on source/drain 14 reaches this value. Hence the read "0" operation has a noise margin of V TH (N₃). This is the preferred technique because the memory cell 10 is guaranteed not to be disturbed by read operation regardless of the rise time of address line A N , the imbalance between the capacitance on the data line D M and the capacitance on the sense node A, or the ratio of channel resistance between transistor N₃ and transistor P₃ or N₂. This third technique requires that the address line A N be charged to V CC for a write operation . Symbolically, V ADDRESS SUPPLY = V CC during write V TRIG (INV₁) during read The address supply voltage source can be implemented as shown in Fig. 3. Address supply circuit 90 shown in Fig. 3 includes P channel enhancement mode transistor TA₁, N channel enhancement mode transistor TA₂, N channel enhancement mode transistor TA₄, and P channel enhancement mode transistor TA₃. As shown in Fig. 3, source 30 of transistor TA₁ is connected to the positive voltage supply V CC . Drain 31 of transistor TA₁ is connected to drain 33 of transistor TA₂ whose source 34 is connected to drain 36 of transistor TA₄ whose source 37 is connected to ground. Source 39 of P channel transistor TA₃ is connected to V CC and drain 40 of transistor TA₃ is connected to gates 32 and 35 of transistors TA₁ and TA₂ and to the common drain connection of transistors TA₁ and TA₂. Gates 41 and 38 of transistors TA₃ and TA₄ are controlled by the signal on line R/W. In the write mode, a signal of 0 volts is applied to line R/W, which turns off N channel transistor TA₄. P channel transistor TA₃ then charges V ADDRESS SUPPLY to V CC . Note that transistor TA₃ should be designed to be sufficiently large to provide the current to address driver 70 to charge up address line A N in the write mode. In the read mode, V CC (logical 1) is applied to line R/W. This turns P channel transistor TA₃ off and turns on N channel transistor TA₄. By appropriately choosing channel lengths and channel widths, the circuit comprising transistor TA₁, transistor TA₂ and transistor TA₄ is designed such that the voltage at the output node 45, V ADDRESS SUPPLY is the same as the trigger point of inverter INV₁ shown in Fig. 1. Thus, V ADDRESS SUPPLY is equal to V TRIG (INV₁). Note that transistor TA₁ should be designed to be sufficiently large to provide the current to address driver 70 to charge up address line A N in the read mode . In one embodiment, transistors TA₁ and TA₃ have a channel length of 2.5 microns and a channel width of 30 microns and transistors TA₂ and TA₄ have a channel length of 2.5 microns and a channel width of 108 microns. Address driver 70 is logically a NOR gate having input lead 54 for receiving the signal address clock and input lead 55 for receiving the signal address select. Lead 54 provides the signal address clock to gate 58 of P channel enhancement mode transistor 52 and to inverter 56 whose output signal controls gate 61 of N channel enhancement mode transistor 50. Lead 54 is also connected to gate 65 of N channel enhancement mode transistor 66. Lead 55 provides the address select signal to gate 59 of P channel enhancement mode transistor 53 and to inverter 57 whose output signal controls gate 62of N channel enhancement mode transistor 51. Lead 55 is also connected to gate 63 of N channel enhancement mode transistor 64. Transistors 50 and 51, 52 and 53 comprise two transmission gates connected in series. Note that when signals address clock and address select are both low (0 volts) all four transistors 50, 51, 52 and 53 are on and N channel transistors 64 and 66 are off and thus the voltage V ADDRESS SUPPLY is transmitted to address line A N . P channel enhancement mode transistor 80 is connected between the voltage supply V CC and data line D M . Date line D M is precharged to V CC by applying a low (0 volts) precharge signal to gate 81 on plead 82. The third technique described above in conjunction with Fig. 3 can be modified by replacing P channel transistor 80 by an N channel enhancement mode transistor (not shown) whose gate is controlled by the signal  precharge . In this embodiment, the data line is precharged to V CC -V T where V T is the threshold voltage of the N channel transistor. Typically a plurality of memory cells identical to cell 10 are connected to data lined D M . Fig. 3 shows two such memory cells of which one has the address line A N , the other an address line A N+1 which is connected to a corresponding address driver (not shown). In another embodiment (not shown), a rectangular memory array is formed which comprises a plurality of data lines, a plurality of address lines, and a plurality of memory cells, the memory cells attached to a given one of said data lines forming a column in the array and the memory cells attached to a given one of the address lines forming a row in the rectangular array. The above embodiments are intended to be exemplary and not limiting. They may be variously modified within the scope of the invention, for example, while the circuits described above are implemented using CMOS technology, they may also be implemented using NMOS technology.

Claims: A memory cell comprising a first inverter (INV₁ ) having an input lead and an output lead, a second inverter (INV₂) having an input lead connected to the output lead of the first inverter and having an output lead, and a single pass transistor (N₃ ) having a first source/drain, a second source/drain, and a control gate, the second source/drain being connected to the input lead of the first inverter and to the output lead of the second inverter characterised by means (90, 70) for providing to the gate of the pass transistor (N₃) during reading a first selected voltage level approximately equal to the trigger voltage of the first inverter (INV₁). A memory cell as claimed in Claim 1 having an output node (B) connected to the output lead of the first inverter (INV₁ ) for supplying the output signal of the first inverter to a circuit external to the memory cell. A memory cell as claimed in Claim 1 or 2 having an output node (A) connected to the output lead of the second inverter (INV₂) for supplying the output signal of the second inverter to a circuit external to the memory cell. A memory cell as claimed in Claim 1, 2 or 3 wherein the first inverter (INV₁) comprises a first P channel enhancement mode transistor (P₁) and a first N channel enhancement mode transistor (N₁), the source of the first P channel transistor being connected to a positive voltage supply, the drain of the first P channel transistor being connected to the drain of the first N channel transistor, the source of the first N channel transistor being connected to a second voltage supply having a lower potential than the first voltage supply, and wherein the second inverter (INV₂) comprises a second P channel enhancement mode transistor (P₂ ) and a second N channel enhancement mode transistor (N₂), the source of the second P channel enhancement mode transistor being connected to the first voltage supply, the drain of the second P channel enhancement mode transistor being connected to the drain of the second N channel enhancement mode transistor, the source of the second N channel enhancement mode transistor being connected to the second voltage supply. A memory cell as claimed in Claim 4 wherein the ratio of the ratio of the channel width to channel length of the first P channel transistor (P₁) to the ratio of the channel width to the channel length of the first N channel enhancement (N₁) mode transistor is less than 1. A memory cell as claimed in Claim 4 or 5 wherein the ratio of the channel length to channel width of the pass transistor (N₃) is less than the ratio of the channel length to channel width of the second N channel enhancement mode transistor (N₂) of the second inverter (INV₂). A memory cell as claimed in Claim 4, 5 or 6 wherein the ratio of the channel length to channel width of the second P channel enhancement mode transistor (P₂) is greater than the ratio of the channel length to channel width of the pass transistor (N₃). A memory cell as claimed in any preceding claim having means (T3;28) for precharging the first source/drain region of the pass transistor (N₃) to a second selected voltage level prior to reading a signal stored on the second source/drain region via the pass transistor. A memory cell as claimed in Claim 8 wherein the means for precharging the first source/drain region of the pass transistor (N₃) includes means (T1,T2) for establishing the second selected voltage level as the trigger voltage of the first inverter (INV₁). A memory cell as claimed in Claim 9 wherein the means for precharging comprises a P channel transistor (80) having a source for connection to a supply voltage, a drain connected to the first source/drain, and a gate for receiving a precharge signal for establishing the second selected voltage level as the level of the supply voltage. A memory cell as claimed in Claim 9 wherein the means for precharging includes an N channel transistor (T3) having a gate for receiving a control signal, a source, and a drain for establishing the second selected voltage level as the voltage level of the control signal minus the threshold voltage of the N channel transistor. A memory cell as claimed in Claim 9 characterised in that the means for providing said first selected voltage level comprises: first and second P channel transistors (TA₁ , TA₃) each having a gate, a source and a drain, first and second N channel transistors (TA₂ , TA₄) each having a gate, a source and a drain, the source of the first P channel transistor (TA₁) being connected to a first power supply voltage source, the drain of the first P channel transistor (TA₁) being connected to a second power supply voltage source having a lower potential than the first power supply voltage source, the gates of the first P channel transistor (TA₁) and the first N channel transistor (TA₂) being connected both to the drain of the first P channel transistor (TA₁) and to the drain of the first N channel transistor (TA₂) and to the drain of the second P channel transistor (TA₃), the source of the second P channel transistor being connected to the first power supply voltage source, and the gates of the second P channel transistor and the second N channel transistor being connected to a lead for receiving a write signal or a read signal. A memory cell as claimed in any preceding claim wherein during writing a third selected voltage level greater than the trigger voltage of the first inverter (INV₁) plus the threshold voltage with body effect of the pass transistor (N₃) is provided to the gate of the pass transistor. A memory cell as claimed in claim 13 having an address driver (70) for controlling the time at which the first and third selected voltage levels are provided, the first and third selected voltage levels being provided to the gate of the pass transistor (N₃) via at least one pair of clock selected transistors each pair comprising a P channel transistor (52,53) and an N channel transistor (50,51) connected in parallel. A memory cell as claimed in claim 14 having two pairs of said clock select transistors (50,52;51,53). A memory circuit comprising a plurality of memory cells (10) each as claimed in any preceding claim and a data line (D m ) connected to the first source/drain of the pass transistor (N₃) of each of the plurality of memory cells. A memory circuit comprising a plurality of data lines (D m ), a plurality of address lines (A n ), and a plurality of memory cells (10) each as claimed in any of the claims 1-15 arranged in a rectangular array, wherein each memory cell is attached to only one of the data lines and to only one of the address lines.

Inventors: HSIEH, HUNG-CHENG
Applicants: XILINX, INC.
Application year: 1986
Main classification: G11C11
IPC codes: G11C11