Photoelectric transducer apparatus

Abstract: In a photoelectric transducer apparatus having a plurality of photoelectric transducer elements each having a capacitor electrode formed on a control electrode of a corresponding semiconductor transistor, the apparatus being adapted to sequentially select each element in units of lines, to control a potential of the control electrode of the selected photoelectric transducer element through the capacitor electrode, to store carriers in the control electrode region, and to read out a signal component corresponding to the amount of charge, the apparatus includes: optical information storing means for storing optical information read out from the photoelectric transducer element; and dark voltage storing means for storing a voltage corresponding to a dark voltage read out from the photoelectric transducer element, and actual optical information stored in the optical information storing means and information corresponding to the dark voltage component stored in the dark voltage storing means are simultaneously read out onto different information output lines.

Description: BACKGROUND OF THE INVENTION Field of the Inveniton The present invention relates to a photoelectric transducer apparatus and, more particularly, to a photoelectric transducer apparatus having a plurality of photoelectric transducer elements each having a capacitor electrode on a control electrode region of a corresponding semiconductor transistor. Related Background Art A TV or SV camera with an image sensor such as a CCD or MOS sensor has an aperture mechanism. Photoelectric transducer apparatuses each having a TV or SV camera with an automatic aperture mechanism are described in Japanese Patent Disclosure (Kokai) Nos. 12759/1985 to 12765/1985. This photoelectric transducer apparatus includes a photosensor having a plurality of sensor cells each having a capacitor formed on a control electrode of a corresponding semiconductor transistor. In the conventional photoelectric transducer apparatus described above, noise is often mixed in an output signal read out from the photosensor cells due to variations in dark voltage generated in the cells within arbitrary store time. An output signal corresponding to the dark current component generated within the photosensor cell is prestored as reference optical information in an external memory in a conventional apparatus. A reference output signal derived from the reference optical information and an output signal from the actual optical information read out from the photosensor cell are compared with each other, and the output signal of the actual optical information is corrected, thereby eliminating the noise component caused by the dark voltage. In the conventional photoelectric transducer apparatus described above, in order to constitute a photoelectric transducer system, the resultant system is undesirably complicated since a separate external circuit including a noise removal memory is required. When a conventional photoelectric transducer apparatus is applied to a video camera or the like, the following problem occurs. When photoelectric transducer cells are arranged in a two-dimensional matrix and scanned in the vertical and horizontal directions, holes are stored in the base of each photoelectric transducer cell in a store mode upon reception of strong light. The base potential is forward-biased with respect to the emitter potential. The potential of a vertical line connected to the emitter electrode of each photoelectric transducer cell receiving strong light is increased to cause a blooming phenomenon. In order to prevent this, it is proposed that the vertical lines are grounded for a period excluding the readout operation, thereby refreshing the charge overflowed onto the vertical line. However, the vertical line can be grounded for only the horizontal blanking period, i.e., about 10 µs. Therefore, the charge overflowed onto the vertical line during the horizontal scanning period still causes the blooming phenomenon. In the readout mode, when image signals are sequentially output by horizontal scanning after they are stored in a vertical line, a dummy signal is generated during the store of the signal in the vertical line. In other words, a smear phenomenon occurs. In addition, the period for performing the refresh operation in the conventional apparatus is about 10 µs in the horizontal blanking period. The refresh time is short to result in incomplete refreshing and hence an after image phenomenon. Furthermore, assume that when the conventional photoelectric transducer apparatus is used as a single-plate type solid-state imaging device in a color television video camera, color filters are deposited or adhered onto the pixels. If an alignment scheme such as a Bayer alignment is used to form vertical lines in units of colors, i.e., R, G, and B, at least two vertical lines are required for the pixels of each column. In this case, since the vertical line portion does not serve as the photosensitive portion, the light-receiving area is reduced by the two vertical lines for each column. In other words, the opening of the aperture is undesirably reduced. In "100 x 100 CID Imager with Integrated Fixed Pattern Noise Suppression", Rudolph Koch and Heiner Herbst, Proceedings of 5th International Conference on Charge-Coupled Devices, University of Edinburgh, September 1979, pages 92 to 97, a system is proposed in which the light sensitive part of an imager consists of pairs of MOS-capacitors forming the picture elements. Signal charges are stored in potential wells, and at read-out the charges for the elements of a selected row flow onto column lines. The charge is transferred from the column lines in parallel into elements of a first CCD. Then the charge is moved from the first CCD into a second CCD, the picture elements of the selected row are re-set, and immediately thereafter the same row is selected again and a zero signal, with fixed pattern noise, is read into the first CCD. The two CCD's are clocked out synchronously and a differential amplifier removes the fixed pattern noise from the signal. SUMMARY OF THE INVENTION According to the present invention there is provided a photoelectric transducer apparatus as set out in claim 1. The remaining claims set out optional features. An embodiment of the present invention provides a photoelectric transducer apparatus comprising optical information storing means for storing optical information read out from a photoelectric transducer element and dark voltage storing means for storing a voltage corresponding to a dark voltage component read out from the photoelectric transducer element, wherein actual optical information stored in the optical information storing means is simultaneously read out together with the dark voltage component stored in the dark voltage storing means onto separate output lines, thereby correcting the information corresponding to the dark voltage in units of optical sensor cells and hence removing noise caused by variations in dark voltage from the output signal from the photosensor cells. In this embodiment there is provided a photoelectric transducer apparatus having a plurality of photoelectric transducer elements each having a capacitor electrode formed on a control electrode of a corresponding semiconductor transistor, the apparatus being adapted to sequentially select each line of elements, to control a potential of the control electrode of the selected photoelectric transducer element through the capacitor electrode, to store carriers in the control electrode region, and to read out a signal component corresponding to the amount of charge stored in the control electrode region, comprising: optical information storing means for storing optical information read out from the photoelectric transducer element; and dark voltage storing means for storing a voltage corresponding to a dark voltage read out from the photoelectric transducer element, wherein actual optical information stored in the optical information storing means and information corresponding to the dark voltage component stored in the dark voltage storing means are simultaneously read out onto different information output lines. The information corresponding to the dark voltage component stored in the dark voltage storing means is read out onto the information output line therefor, and at the same time the information corresponding to the dark voltage is corrected in units of photosensor cells, thereby eliminating noise caused by variations in dark voltage. The noise corresponding to the dark voltage component can, therefore, be processed within the sensor. An external circuit or the like need not be used to easily constitute a system configuration, thereby obtaining a low-cost photoelectric transducer apparatus. An embodiment of the present invention provides a photoelectric transducer apparatus comprising: a plurality of photoelectric transducer cells; a signal read line for reading out signals from the plurality of photoelectric transducer elements; and a plurality of capacitors for selectively storing the signals read out through the signal read line. Since a plurality of capacitors for selectively storing the signals read out through the signal read line are provided, the image signal appearing on the vertical line can be shortened, thereby reducing the frequency of occurrence of the blooming and smearing phenomena. Since the capacitor can be disconnected from the pixel after the image signal is stored in the capacitor, the refresh time can be prolonged to reduce the occurrence of the after image phenomenon. In addition, if the photoelectric transducer apparatus is used in a color video camera, the number of capacitors per column can be the number of different colors in the signals from the column, and only one vertical line per column is used, thereby increasing the aperture. In an embodiment of the present invention, a capacitor is connected to a vertical signal line through a switch to store the signal from the photoelectric transducer cell in the capacitor, so that the switch isolates the stored signal from the vertical signal line, allowing the vertical signal line to be reset, so that the signal component in the capacitor is free from smearing or blooming. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is cancelled; Fig. 2 is cancelled; Fig. 3A is a circuit diagram of a photoelectric transducer apparatus according to a first embodiment of the present invention; Fig. 3B is a circuit diagram showing the main part of a second embodiment; Fig. 4 is a timing chart for explaining the operation of the first and second embodiments of the present invention; Fig. 5 is a circuit diagram of a photoelectric transducer apparatus according to a third embodiment of the present invention; Fig. 6 is a timing chart for explaining the operation of the apparatus in Fig. 5; Fig. 7 is a circuit diagram of a photoelectric transducer apparatus according to a fourth embodiment of the present invention; Fig. 8 is a timing chart for explaining the operation of the apparatus in Fig. 7; Fig. 9 is a circuit diagram of a photoelectric transducer apparatus according to a fifth embodiment of the present invention. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Fig. 3A is a circuit diagram of a photoelectric transducer apparatus according to a first embodiment. Referring to Fig. 3A, photosensor cells 1 as the photoelectric transducer elements are one-dimensionally arranged. Capacitor electrodes 2 of the photosensor cells 1 are commonly connected to a driving line and to a driving terminal. Collector electrodes 3 of the photosensor cells 1 are commonly connected to a positive voltage terminal. Emitter electrodes 4 of the photosensor cells 1 are respectively connected to vertical lines 5. The vertical lines 5 are commonly connected through FETs 6. The FETs 6 are connected to a ground terminal 7. The gate electrodes of the FETs 6 are commonly connected to a first reset terminal. The capacitors 9 and the source electrodes of the FETs 10 are respectively connected to the vertical lines 5 through FETs 8. The capacitors 9 are connected to a ground terminal 12 through a ground line 11. The capacitors 9 are signal charge store capacitors, respectively. The gate electrodes of the FETs 10 are respectively connected to output terminals 14 of the scanning circuit 13. The drain electrodes of the FETs 10 are connected to an output amplifier 16 through a horizontal line 15. The output terminal of the output amplifier 16 is connected to an external output terminal 17, so that an output voltage is extracted from the external output terminal 17. The gate electrodes of the FETs 10 are respectively connected to the gate electrodes of FETs 18. The drain electrodes of the FETs 18 are connected to an output amplifier 20 through an output line 19. The output terminal of the output amplifier 20 is connected to an external output terminal 21, so that an output voltage is extracted from the external output terminal 21. The source electrodes of the FETs 18 are connected to the vertical lines 5 through FETs 22. In the above embodiment, one electrode of each of capacitors 24 is connected between a corresponding one of the source electrodes of the FETs 18 and a corresponding one of the FETs 22 through a corresponding one of vertical lines 23. The other electrode of each of the capacitors 24 is connected to the ground line 11. The capacitors 24 serve as dark voltage store capacitors, respectively. Reset FETs 26 are connected between the lines 15 and 19 and ground, respectively. The gate electrodes of the FETs 26 are connected to the second reset terminal. A control circuit 27 supplies timing pulses (Fig. 4) to the respective terminals. The operation of the above embodiment will be described below. As shown in the timing chart of Fig. 4, the photosensor cells store optical information corresponding to the amounts of light upon light store operation during the light irradiation store time. During a predetermined period of time until the light information readout, the photosensor cells 1 perform store operations of carriers upon light irradiation. During the reset time, both the control and first reset terminals are set at H level, so that the charges stored in the capacitors 9 are reset through the corresponding FETs 6. The control terminal is set at H level, and the first reset terminal is set at L level. When a readout pulse voltage is applied to the driving terminal, the optical or light information stored in the photosensor cells 1 is read out onto the vertical lines, and the light information is stored in the capacitors 9. When the light information readout time has elapsed, the first reset terminal is set at H level and the control terminal is set at L level. In this state, when the refresh pulse voltage is applied to the driving terminal, the photosensor cells 1 are maintained in the refresh state. The light information stored in the photosensor cells 1 is erased through the FETs 6. When the refresh time has elapsed, the photosensor cells 1 are temporarily shielded from light so that a shading time is started. In this case, the photosensor cells 1 store the dark voltage generated in the dark state. It should be noted that the dark voltage store time is controlled to be equal to the light irradiation store time. Subsequently, both the dark voltage readout terminal and the first reset terminal are set at H level to reset through the FETs 6 the charges stored in the capacitors 24 during the reset time. The light information corresponding to the dark voltage components stored in the photosensor cells 1 is read out onto the vertical lines under the following conditions. The dark voltage readout terminal is set at H level, the first reset terminal is set at L level, and the readout pulse voltage Er is applied to the driving terminal. Therefore, the dark voltage signals are stored in the corresponding capacitors 24. When the dark voltage readout time has elapsed, the dark voltage readout terminal is set at L level, and the first reset terminal is set at H level. The refresh pulse voltage E0 is applied, to the driving terminal to set the photosensor cells 1 in the refresh state. When a predetermined period of time has elapsed, the refresh pulse voltage applied to the driving terminal is set at L level. Therefore, the refresh time is terminated. Along with this, the shading time is ended, and the first reset terminal is set at L level. Subsequently, clocks are supplied to the scanning circuit 13 to sequentially shift the output pulses from the output terminals 14 thereof. The FETs 10 and 18 are sequentially turned on in response to these timing pulses. By this horizontal scanning, light information signals are sequentially read out from the capacitors 9 onto the horizontal line 15. In synchronism with the readout operation, the information signals corresponding to the dark voltage components stored in the capacitors 24 are read out onto the output line 19. In this manner, the light information signals read out onto the horizontal line 15 are output to the external output terminal 17 through the output amplifier 16. The information signals corresponding to the dark voltage components read out onto the output line 19 are output to the external output terminal 21 through the output amplifier 20, so that the output voltage is thus extracted from this external output terminal. For example, the readout operation for one horizontal scanning time is completed, and the reset time is started. Thereafter, the above operations will be repeated. Since the photoelectric transducer apparatus of this embodiment is operated as described above, an additional external circuit which was required in the conventional photoelectric transducer apparatus to remove the noise component caused by the dark voltage need not be used, thereby smplifying the system configuration. Therefore, demand for a low-cost photoelectric transducer apparatus can be satisfied. In the above embodiment, the actual light information signals simultaneously read out onto the corresponding lines and the information signals corresponding to the dark voltage components are amplified by the output amplifiers 16 and 20 in an output circuit 25, and the amplified signals are extracted through the external output terminals, respectively. However, the present invention is not limited to the above arrangement. As shown in Fig. 3B, (a second embodiment), the output circuit 25 may be replaced with a differential amplifier 28 to subtract the information corresponding to the dark voltage components from the actual light information. Light information representing a difference may be output from a terminal 29. In the first and second embodiments, the dark voltage store time is set to be equal to the light irradiation time. However, such setting need not be performed. For example, by effectively utilizing the relationship between the dark voltage store time and the amount of dark voltage components generated by the photosensor cells 1, i.e., a substantially proportional relationship, the dark voltage store time may be set to be shorter than the light irradiation time, and gains of the output amplifiers 16 and 20 in the output circuit 25 may be independently controlled. Alternatively, the capacitances of the store capacitors 9 and 24 are adjusted to obtain the same effect as in the above embodiments. In the first and second embodiments, the photosensor cells are one-dimensionally aligned. However, the arrangement of the cells is not limited to this. As described above, the photoelectric transducer apparatus comprises light information storing means for storing light information read out from the photoelectric transducer element, and dark voltage storing means for storing a voltage corresponding to the dark voltage component read out from the photoelectric transducer element. The actual light information stored in the light information storing means and the information corresponding to the dark voltage component stored in the dark voltage storing means are simultaneously read out from the separate output lines. Therefore, the information corresponding to the dark voltage included in the output can be corrected in units of photosensor cells when the actual optical information read out from the photosensor cell is output, and noise caused by variations in dark voltage can be removed from the output signal. Unlike in the conventional photoelectric transducer apparatus, an additional external circuit is not required to simplify the system configuration. In addition, demand for an economical photoelectric transducer apparatus can be satisfied. A third embodiment of the present invention will be described in detail with reference to the accompanying drawings. Fig. 5 is a circuit diagram of photoelectric transducer elements arranged in a 4 x 4 matrix to constitute a photoelectric transducer apparatus. The photoelectric transducer apparatus includes: basic photosensor cells 100 (the collector of each bipolar transistor is connected to the substrate and the substrate electrode), horizontal lines 31, 31', 31", and 31'" serving as the readout-refresh pulse lines; a vertical shift register 32 for generating a readout pulse; buffer MOS transistors 33, 33', 33", and 33'" arranged between the vertical shift register 32 and the horizontal lines 31, 31', 31", 31'"; a terminal 34 for applying a pulse  R to the drains of the buffer MOS transistors 33, 33', 33", and 33'"; a vertical shift register 32' for generating a refresh pulse; buffer MOS transistors, 47, 47', 47", and 47'" formed between the vertical shift register 32' and the horizontal lines 31, 31', 31", and 31'"; a terminal 48 for applying a pulse F to the drains of the buffer MOS transistors 47, 47', 47", and 47'"; vertical lines 35, 35', 35", and 35'" serving as vertical readout lines for reading out signal charges from the basic photosensor cells 100; storage capacitors 37-1, 37-2, 37-1', 37-2', 37-1", 37-2", 37-1'", and 37-2'" for storing these signal charges; transfer MOS transistors 36-1, 36-2, 36-1', 36-2', 36-1", 36-2", 36-1'", and 36-2'" arranged between the vertical lines 35, 35', 35", and 35'" and the capacitors 37-1, 37-2, 37-1', 37-2', 37-1", 37-2", 37-1'", and 37-2'"; gate MOS transistors 38-1, 38-2, 38-1', 38-2', 38-1", 38-2", 38-1'", and 38-2'" for charging/ discharging the storage capacitors 37-1, 37-2, 37-1', 37-2', 37-1", 37-2", 37-1'", and 37-2'"; output lines 39-1 and 39-2 for reading out the stored voltages and supplying them to an amplifier; MOS transistors 40-1 and 40-2 for refreshing the charges on the readout lines; a terminal 41 for applying the refresh pulse HC to the MOS transistors 40-1 and 40-2; transistors 42-1 and 42-2 such as bipolar transistors, MOSFETs or JFETs for amplifying the output signals; output terminals 43-1 and 43-2 of the transistors 42-1 and 42-2; MOS transistors 44, 44', 44", and 44'" for refreshing the charges stored on the vertical lines 35, 35', 35", and 35'"; a terminal 45 for supplying a pulse vc to the gates of the MOS transistors 44, 44', 44", and 44'"; a horizontal shift register 46 for turning on the MOS transistors 38-1, 38-2, 38-1', 38-2', 38-1", 38-2", 38-1'", and 38-2'" to select the storage capacitors; and a control circuit 200 for supplying signals to the respective terminals. The operation of the photoelectric transducer apparatus will be described with reference to Fig. 5 and a timing chart of Fig. 6. Assume that the collector potential of the photosensor cells is kept at a positive potential in the following description. The store operation is performed until the tl, and holes corresponding to the amounts of light incident on the photoelectric transducer cells 100 are respectively stored in their p-type base regions. At time t1, a pulse signal vc is already high, turning on the transistors 44, 44', 44", and 44'". A pulse signal T1 rises to turn on the transistors 36-1, 36-1', 36-1", and 36-1'" to refresh the store capacitors 37-1, 37-1', 37-1", and 37-1'". A pulse signal Hc rises to turn on the transistors 40-1 and 40-2 to refresh the residual charges on the output lines 39-1 and 39-2. Subsequently, the pulse signal vc falls to turn off the transistors 44, 44', 44", and 44'", and the vertical lines 35, 35', 35", and 35'" and the capacitors 37-1, 37-1', 37-1", and 37-1'" are set in the floating state. A pulse signal v1 is output from the vertical shift register 32 to turn on the transistor 33. When a readout pulse signal R is then applied to the terminal 34 and to the horizontal line 31 through the transistor 33, the readout operation of the photoelectric transducer cells 100 of the first row is started. By this readout operation, the readout signals from the cells of the first row appear on the vertical lines 35, 35', 35", and 35'" and in the store capacitors 37-1, 37-1', 37-1", and 37-1'". When the readout operation is completed, the pulse signal T1 falls to turn off the transistors 36-1, 36-1', 36-1", and 36-1'". The capacitors 37-1, 37-1', 37-1", and 37-1'" and the vertical lines 35, 35', 35", and 35'" are disconnected, an then signal vc rises so that the residual charges on the vertical lines 35, 35', 35", and 35'" are refreshed. At time t2, a pulse signal T2 rises to turn on the transistors 36-2, 36-2', 36-2", and 36-2'" so that the charges in the store capacitors 37-2, 37-2', 37-2", and 37-2'" are refreshed. Subsequently, the pulse signal vc falls to turn off the transistors 44, 44', 44", and 44'". A pulse signal v2 is output from the vertical shift register 33', and the readout pulse signal R is supplied to the horizontal line 31' through the terminal 34. In this state, the readout operation of the photoelectric transducer cells 100 of the second row is started. By this readout operation, the readout signals from the cells 100 of the second row appear on the vertical lines 35, 35', 35", and 35'" and in the store capacitors 37-2, 37-2', 37-2", and 37-2'". Upon completion of the readout operation for the second row, the pulse signal T2 falls to turn off the transistors 36-2, 36-2', 36-2", and 36-2'", and the capacitors 37-2, 37-2', 37-2", and 37-2'" and the lines 35, 35', 35", and 35'" are disconnected. The pulse signal vc rises to refresh the residual charges from the vertical lines 35, 35', 35", and 35'". At time t3, the pulse signal Hc falls to turn off the transistors 40-1 and 40-2. The pulse signal H1 is output from the horizontal shift register 46 to turn on the transistors 38-1 and 38-2. The charges in the capacitors 37-1 and 37-2 are amplified by the transistors 42-1 and 42-2 through the transistors 38-1 and 38-2 and the output lines 39-1 and 39-2. The amplified signals appear at the terminals 43-1 and 43-2. When this output operation is completed, the pulse signal Hc rises to refresh the output lines 39-1 and 39-2. Sub-sequently, the pulse signals H2 and H3 are sequentially output from the horizontal shift register 46. In the same manner as described above, the readout signals from the cell of the first row and the second column and the cell of the second row and the second column and the readout signals from the cell of the first row and the third column and the cell of the second row and the third column are sequentially output from the terminals 43-1 and 43-2. Every time the readout signals appear, the output lines 39-1 and 39-2 are refreshed. At time t4, a pulse signal c1 is output from the vertical shift register 32' to turn on the transsistors 47 and 47'. A pulse signal F is applied to the terminal 48 so that the refresh pulse is applied to the horizontal lines 31 and 31' through the transistors 31 and 31'. As a result, the refresh operation of the photoelectric transducer cells 100 of the first and second rows is performed. The readout and refresh operations for the cells 100 of the third and fourth rows are performed at time t5 in the same manner as in the cells of the first and second rows. The readout and refresh operations are repeated for the cells 100 of the first and second rows at time t6. The above operations are repeated. In the above operation, the time when the readout signal is present on the vertical line is the period between rising of the pulse signal R and falling of the pulse signal T1, i.e., between the times t1 and t2 when the output from the photoelectric transducer cell 100 of the first row and the first column is assumed. As can be seen, this time interval has a large margin. In the conventional photoelectric transducer apparatus applied in the video camera, the vertical line selected last by horizontal scanning stores the signal charge for about 52.5 µs. For example, if the time interval between rising of the pulse signal R and falling of the pulse signal T1 is set to be 0.5 µs, the apparatus of this embodiment can be improved by about 105 times (40 dB) for blooming and smearing, as compared with the conventional apparatus. Since the photosensitive transducer cells are disconnected from the store capacitors by turning off the transistors 36-1, 36-2, 36-1', 36-2', 36-1", 36-2", 36-1'", and 36-2'" after the signal charges are stored in the store capacitors, the photoelectric transducer cells 100 can be sufficiently refreshed. For example, the refresh time may be a time interval between times t3 and t5, i.e., one horizontal scanning cycle. Therefore, the after image phenomenon can be reduced as compared with the conventional case. If the photoelectric transducer apparatus is applied to a color video camera and color filters are formed on the sensor cells, the number of capacitors per column is that of the cell colors per column, and the operation as described above is performed. In this case, only one vertical line is used for each column, and the aperture of the sensor cells is not reduced. For example, as shown in Fig. 5, the color filters R, G, and B are arranged according to the Bayer's scheme, and the cells are operated at the timings shown in Fig. 6. B signals are stored in the capacitors 37-1 and 37-1", G signals are stored in the capacitors 37-2, 37-1', 37-2", and 37-1'", and R signals are stored in the capacitors 37-2' and 37-2'", respectively. In the above embodiment, the two vertical lines are simultaneously accessed. However, the number of lines is not limited to two, but can be extended to three or more. In this case, the number of storage capacitors per column is that of pixels per column which are simultaneously accessed. Fig. 7 is a circuit diagram showing a fourth embodiment of the present invention. A decoder 49 is arranged between a vertical shift register 32 and horizontal lines 31, 31', 31", and 31'", and a control circuit 200 is operated at timings shown in Fig. 8. In this embodiment, the decoder 49 also serves the function of the photoelectric transducer cell refresh vertical register 32' of the fourth embodiment (Fig. 5), thereby further simplifying the system configuration. The operation of the fifth embodiment will be described with reference to the timing chart of Fig. 8. Assume that the store operaiton is performed until time tl, and that the holes corresponding to the amounts of light incident on the photoelectric transducer cells 100 are respectively stored in their p-type base regions. At time t1, a pulse signal vc has already risen, the vertical lines have already been grounded, and a pulse signal T1 rises to refresh the charges of the capacitors 37-1, 37-1', 37-1", and 37-1'". Thereafter, when the pulse signal vc falls to set the vertical lines and the capacitors in the floating state, the decoder 49 outputs a pulse D1. The signals from the photoelectric transducer cells 100 of the first row appear on the vertical lines and in the capacitors 37-1, 37-1', 37-1", and 37-1'". After the readout operation is completed, the pulse signal T1 falls to disconnect the capacitors 37-1, 37-1', 37-1", and 37-1'" from the vertical lines, and the pulse signal vc rises again to refresh the vertical lines. The pulse signal T2 rises to refresh the capacitors 37-2, 37-2', 37-2", and 37-2'", and the pulse signal vc then falls. When the pulse signal D2 rises again, the signals from the photoelectric transducer cells of the second row appear on the vertical lines and the capacitors 37-2, 37-2', 37-2", and 37-2'". Thereafter, the pulse signal T2 falls and the pulse signal vc rises to refresh the vertical lines. In this state, the signals from the first row are stored in the capacitors 37-1, 37-1', 37-1", and 37-1'", and the signals from the second row are stored in the capacitors 37-2, 37-2', 37-2", and 37-2'". In the same manner as in the third embodiment, these stored signals are sequentially read out from time t3 to time t5. In this case, during the time interval from time t4 to time immediately before time t5, the pulse signals D1 and D2 are set at high level, so that the photoelectric transducer cells 100 of the first and second rows are refreshed. The readout and refresh operations of the photoelectric transducer cells of the third and fourth rows are performed in the same manner as described above. According to this embodiment, the refresh and readout operations of the photoelectric transducer cells of each cell are performed by using a single vertical shift register, thereby simplifying the system configuration. In the above embodiment, two output lines are used. However, the number of output lines may be three or more. For example, as shown in a fifth embodiment of Fig. 9, four output lines are used in units of colors of filters. In this case, the load of the output lines can be reduced into 1/2 of the two output lines. In addition, an image processing circuit can also be simplified. The arrangement of Fig. 9 is different from that of Fig. 5 in the following points. Output lines 39-3 and 39-4 are added. Transistors 38-1' and 38-1'" are connected to output line 39-3 instead of the output line 39-1. Transistors 38-2' and 38-2'" are connected to output line 39-4 instead of the output line 39-2. Transistors 40-3 and 40-4, the gates of which are commonly connected to the gates of transistors 40-1 and 40-2, are added to refresh the output lines 39-3 and 39-4. A transistor 42-3 for outputting a signal from the output signal 39-3, an output terminal 43-4, a transistor 42-4 for outputting a signal from the output line 39-4, and an output terminal 43-4 are added. Other arrangements of Fig. 9 are the same as those of Fig. 5, and the same reference numerals as in Fig. 5 denote the same parts in Fig. 9. In the photoelectric transducer apparatuses in the third to fifth embodiments as described above in detail, a plurality of capacitors are arranged for each readout line of the photoelectric transducer cells.. The signal charges can be stored in the capacitors in a short period of time, and then the readout lines can be disconnected therefrom. Therefore, blooming and smearing caused by the present of the signal charges on the readout lines can be completely prevented. Furthermore, since the refresh time can be sufficiently prolonged, the after image phenomenon can be effectively prevented. Many lines are often simultaneously accessed when the photoelectric transducer apparatus is applied to a color video camera or the like. The capacitors corresponding to the pixels to be accessed are arranged for each readout line. The number of readout lines need not be increased, and thus the aperture can be increased.

Claims: A photoelectric transducer apparatus comprising: a plurality of photoelectric transducer cells (1); a plurality of signal read-out lines (5) for receiving signals read from the photoelectric transducer cells (1); first switch means (8) connected to each signal read-out line (5); first storage means (9) coupled through the first switch means (8) to each signal read-out line (5), to receive a signal read from a photoelectric transducer cell (1); second storage means (24) coupled to receive a signal read from a photoelectric transducer cell (1); and output means (25) to receive signals from the first and second storage means (9,24) along parallel paths and process them, characterised in that: the apparatus further comprises second switch means (22) connected to each signal read-out line (5) in parallel with the first switch means (8), and in that the second storage means (24) is coupled to the signal read-out lines (5) through the second switch means (22) in parallel with the first storage means (9). Apparatus according to claim 1, in which the first and second storage means (9,24) are coupled to a source of reference voltage (12). Apparatus according to claim 1 or claim 2 in which the first and second storage means (9,24) comprise capacitors. Apparatus according to any one of claims 1 to 3 in which the first storage means (9) is coupled to a first read-out switch means (10) and the second storage means (24) is coupled to a second read-out switch means (18) through which signals from the first and second storage means (9,24) can be read out onto the said parallel paths. Apparatus according to any one of the preceding claims in which the photoelectric transducer cells are arranged in a two-dimensional array. Apparatus according to any one of the preceding claims comprising a control circuit (27) arranged to control the first and second switch means so that signals from the same photoelectric transducer cell are stored by the first storage means and the second storage means. Apparatus according to claim 5 comprising a control circuit (200) arranged to control the first and second switch means so that signals from different photoelectric transducer cells of the same column are stored by the first storage means and the second storage means. Apparatus according to claim 5 or claim 7 comprising colour filters in front of the photoelectric transducer cells, cells with filters of different colours being provided in the same column of the array. Apparatus according to any one of claims 1 to 6 in which the output means (25) comprises a differential amplifier (28) for receiving signals along the said parallel paths. Apparatus according to any one of claims 1 to 8 in which the output means comprises a plurality of respective output terminals (17, 21; 43-1, 43-2) for outputting signals from respective said parallel paths.

Inventors: HARADA TADANORI, HASHIMOTO SEIJI, ISHIZAKI AKIRA, OHZU HAYAO, SUGAWA SHIGETOSHI, SUZUKI TOSHIJI, TANAKA NOBUYOSHI, HARADA, TADANORI, HASHIMOTO, SEIJI, ISHIZAKI, AKIRA, OHZU, HAYAO, SUGAWA, SHIGETOSHI, SUZUKI, TOSHIJI, TANAKA, NOBUYOSHI, Harada, Tadanori, c/o CANON KABUSHIKI KAISHA, HASHIMOTO, SEIJI, C/O CANON KABUSHIKI KAISHA, ISHIZAKI, AKIRA, C/O CANON KABUSHIKI KAISHA, OHZU, HAYAO, C/O CANON KABUSHIKI KAISHA, SUGAWA, SHIGETOSHI, C/O CANON KABUSHIKI KAISHA, Suzuki, Toshiji, c/o CANON KABUSHIKI KAISHA, Tanaka, Nobuyoshi, c/o CANON KABUSHIKI KAISHA
Applicants: CANON KK, CANON KABUSHIKI KAISHA
Application year: 1986
Main classification: H04N3
IPC codes: H04N3, H04N5