INTEGRATED CIRCUIT DEVICE

Abstract: An integrated circuit device has a wiring substrate (2) on one surface of which integrated circuit chips (l) are mounted. A power source substrate (5) of a laminated structure is in contact with the opposite surface of the wiring substrate (2), the power source substrate being of alternate laminations of conductor layers (7) of a heat conductive metal and insulating layers (6) of an elec­ trically insulating material, which layers are bonded together. Means such as pins (4) electrically connect the wiring substrate and the power source substrate to each other, and hence connect the chips (l) to the conductive layers (7), a heat radiating means is provided in at least one of either or both of the conductor layers (7) and the insulating layers (6) and radiates heat, which occurs in the power source substrate (5), to the exterior of the device. Such an integrated circuit device has a power source substrate (5) of a remarkably high heat radiating effici­ ency, and may permit a high density of integrated circuit chips (l) on the wiring substrate (2).

Description: This invention relates to an integrated circuit device having a wiring substrate. Such devices are desired, e.g. in order to obtain an integrated circuit device suitable for large-scale electronic computers and having a high density of integrating circuit chips. This type of integrated circuit device is generally formed by mounting integrated circuit chips such as LSI chips, on one surface of a multilayer wiring substrate, and connecting conductors, which are provided in the substrate, and an external power source to each other electrically via connecting terminals. As the number of the integrated circuit chips increases in order to achieve a higher density thereof, the size of the substrate necessary to accommodate them becomes large and the substrate temperature increases during operation of the device so that the substrate may bend or flex. JP-U-323l2 of 1983 published on July 18, 1983 and entitled "Heat Radiating and Power Supplying Structure for Ceramic Substrates", states that the flexing or bending of the substrate increases substantially in proportion to the size thereof, and therefore it becomes very difficult to attach a cooling radiation fin to the substrate by using solder or a bonding agent. That document further states that it is difficult, for a large substrate, to supply the electric current through the conductors therein in the conventional manner, because the voltage in the conductors may drop greatly. JP-U-323l2 of l983 proposes that the conductors be separate from the wiring substrate on which the integrated circuit chips are to be mounted. This is achieved by providing alternate laminations of insulating sheets (having excellent thermal conductivity and mechanical elasticity) and conductor plates between a wiring substrate (ceramic substrate) and a radiation fin. The resultant product as a whole is then fixed by bolts. However, this structure has unsatisfactory contact thermal resistance between the insulating sheets and conductor plates but no reference is made at all to this point in JP-U-323l2 of l983. Also, no suitable materials for the insulating sheets, in order to achieve good thermal conductivity and mechanical elasticity, are disclosed. The present invention seeks to provide an integrated circuit device capable of having a high density of integrated circuit chips on a wiring substrate, by improving the efficiency of heat radiation from these chips. The inventors of the present invention found that, in order to obtain an integrated circuit device in which a high density of integrated circuit chips on a wiring substrate was achieved, without an increase in the dimensions of the device, it was desirable to provide both a wiring substrate, on which the integrated circuit chips were mounted, and a power source substrate of alternately laminated conductor layers and electrically insulating layers. However, it was also found that when the wiring substrate and the power source substrate of the integrated circuit device were separate, the power source substrate generated heat due to the increase in electric power, which would destroy the integrated circuit chips in extreme cases. The calorific power of the power source substrate increases as the power input is increased, and it is possible that this calorific power causes the temperature to exceed 500°C. In order to prevent the integrated circuit chips from being destroyed, the temperature of the power source substrate should desirably be controlled so that it is not more than 100°C, and preferably not more than 80°C. Various means for removing the heat occurring in integrated circuit chips in an integrated circuit device have already been proposed. For example, Japanese Patent Laid-Open No. 32348 of 1985 entitled "Cooling Structure-carrying Semiconductor Device" (JP 60-32348) discloses one arrangement for this (See also e.g. JP-A-59 202 654). However, no or substantially no, means for removing the heat occurring in a power substrate is known. There are substantially no reports discussing the generation of heat in a power source substrate. The present inventors discovered that if a heat radiation fin was attached to a power source substrate consisting of a laminated structure of conductor layers and insulating layers, the heat occurring in the power source substrate could not, in practice, be removed. In an experiment, in which an electric current of 500 A was supplied to a power source substrate consisting of seven 150 mm square conductor layers and eight 150 mm square insulating layers, which were laminated alternately to form a unitary structure, with a heat radiation fin attached to this power source substrate, the temperature of the heat occurring in the substrate exceeded 500°C, and did not drop greatly even when air for cooling was suppled thereto at a wind velocity of 10 m/sec. Therefore, according to the present invention, there is provided an integrated circuit device having a wiring substrate with integrated circuit chips on one surface thereof and a power source substrate in contact with another surface thereof, the power source substrate containing conductors for transmitting electrical power from an external power source and having means for supplying that electrical power to the chips; wherein the power source substrate has a unitary laminated structure of alternate conductor layers and electrically insulating layers; at least one of the conductor layers, or at least one of the conductor layers and at least one of the insulating layers having heat transmission means therein. It is desirable, but not strictly necessary, to provide the heat transmission means in each of the conductor layers or in each of the conductor layers and each of the insulating layers. In an experiment in which the temperature of the heat occurring in a power source substrate consisting of a multilayer laminated structure of conductor layers and insulating layers was measured, the temperature was the highest at the part of the power source substrate which was close to the wiring substrate, and decreased gradually as the distance from the wiring substrate increased. Therefore, the lower layers in the power source substrate, i.e. the layers therein which are relatively far from the wiring substrate need not necessarily be provided with heat transmission means. It is preferable that not less than ½ of the conductor layers or ½ of the conductor layers and the insulating layers in the power source substrate be provided with heat transmission means, and it is more preferable that not less than 2 / 3 of such layers be provided with heat transmission means. Thus, in a power source substrate having ten insulating layers, at least five, preferable not less than seven and most preferably all of the ten layers should be provided with heat transmission means. It is also possible that the alternate layers be provided with the heat transmission means. The heat transmission effects of each layer in a power source substrate need not be the same. For example, the heat transmission effect of the layer which is closest to the wiring substrate may be set to a maximum level, and the heat transmission effect of the other layers can be reduced in the direction in which the distance between these layers and the wiring substrate increases. For example, in the case where suitable heat transmission filler, which will be described in more detail later, is mixed into the insulating layers to give those layers a heat transmission effect, the heat transmission effects of these layers may be varied by varying the amount of filler in each layer. It is desirable that the heat transmission means is provided in the insulating layers, in addition to in the conductor layers, because the conductor layers are normally formed from a metal having a high thermal conductivity, such as copper or a copper alloy, and therefore have good intrinsic heat transmission characteristics. It is preferable for the electrically insulating layers to be of an organic resin and also it is desirable that a bonding agent be inserted among the feeding conductor layers, and a heat transmission filler be mixed in the layers of the organic resin, as will be described in detail later. If a power source substrate is formed in this manner, the filler can be utilized as the heat transmission means. Moreover, owing to the presence of this filler, the cracking resistance of the layers of the organic resin may be improved. There is a large difference between the coefficients of thermal expansion of the layers of organic resin and the conductor layers, so that cracks may occur in the conductor layers, which have a lower coefficient of thermal expansion. However, if such a filler is mixed into these layers of organic resin, it acts to prevent the development of cracks, so that the cracking resistance of the layers may be improved. If, in addition, a resin working as a binder is used, it becomes unnecessary to use a bonding agent or solder for the purpose of combining into a unit the insulating layers and the conductor layers. The insulating layers may consist of an organic material, an inorganic material or a mixture thereof. A material having a high coefficient of electrostatic induction, and preferably, a coefficient of electrostatic induction of not less than 4, should desirably be used as a material of the insulating layers because an electric current up to 500 A per layer usually flows through a power source substrate. In order that dielectric breakdown does not occur in the insulating layer, even when such an electric current flows through the power source substrate, it is preferable to set the coefficient of dielectric induction of the insulating layer to a high level, preferably, not less than 4. The organic material used for the insulating layers is preferably epoxy resin, addition polymerized polyimide, polyvinylidene fluoride or phenol formaldehyde. The coefficient of dielectric induction of polyvinylidene fluoride is 7-8, and that of phenol formaldehyde is about 6. Inorganic material may, however, be used for the insulating layers, and suitable materials include ceramic materials of high heat conductive silicon carbide (SiC), ceramic materials of high-purity silicon carbide, single crystals of silicon carbide, alumina (Al₂O₃) or beryllium oxide (BeO). However, it is difficult to form a plate with dimensions of the order of several hundred µm by using a ceramic material. Hence, it is more convenient to use an organic resin. The conductor layers are preferably of copper or a copper alloy. Suitable copper alloy which may be used include copper-silver alloys or copper-titanium alloys. The heat transmission filler referred to previously preferably is a metallic filler composed of copper, silver or an alloy thereof, or a ceramic filler composed of alumina or silicon carbide. An experiment was conducted in which seven l50 mm square conductor layers of pure copper and eight l50 mm square insulating layers of epoxy resin were laminated alternately. Alumina fillers, as heat transmission means in the insulating layers were inserted, and an electric current of 500 A was supplied to the resultant power source substrate. In this experiment, the temperature of the heat occurring in the power source substrate was about 60°C on the surface adjacent the wiring substrate, and about 55°C on the opposite surface. Thus, the heat transmission capability of this power source substrate was improved about ten times relative to that of a power source substrate provided only with a heat radiating fin. It is preferable to form small bores, which communicate with the exterior of the power source substrate, in the conductor layers or insulating layers to form the heat transmission means, i.e. as inside-layer heat transmission means. These bores increase the heat transmission area, so that the heat transmission capability of the power source substrate can be improved. If a coolant, for example, a liquid such as water or freon R , or a gas, such as the air is passed through such bores to forcibly cool the layers of the power source substrate, the heat transmission capability thereof can be further improved. When a coolant is introduced into the coolant flow passages (bores) provided in the insulating layers or conductor layers in the power source substrate, so as to transmit the heat, it is important to provide a means for supplying a coolant from the outside of the power source substrate into the coolant flow passages therein. It is proposed that the connecting terminals for supplying electric power from an external power source to the power source substrate be utilized as the coolant supply means. If coolant flow passages are provided in the connecting terminals, the feeding of an electric current and the supplying of a coolant can be done in a compact manner. This enables the maintenance and inspection of the coolant flow passage-carrying power source substrate of laminated construction to be carried out easily, and the integrated circuit device to be made compact. In the power source substrate in the integrated circuit device, the conductor layers and insulating layers may be combined into a unit by bonding, so as to minimize the contact thermal resistance thereof. When the insulating layers are of an organic resin, the resin is dissolved in a solvent, such as acetone, and the resultant solution is applied to the conductor layers. As a result, insulating layers can be formed and these layers can be bonded at the same time to the conductor layers. When the insulating layers of an inorganic material, it is preferable that the layers be bonded to the conductor layers by using solder or some other bonding material. According to a development, the wiring substrate on which integrated circuit chips are mounted is preferably provided with terminal pins, which are used to join the wiring substrate to the conductor layers in a power source substrate. The power source substrate is then preferably provided with through holes into which the terminal pins extend. This permits the wiring substrate and the power source substrate to be connected electrically via the terminal pins. Embodiments of the invention will now be described in detail, by way of example, with reference to the accompanying drawings, in which: Fig. 1 is a perspective view of a first embodiment of an integrated circuit device according to the present invention, with the chips and substrate being separated so that the terminal pins can be seen. Figs. 2 and 3 are sectional front elevations of examples of a power source substrate suitable for use in the present invention; Fig. 4 illustrates the steps of manufacturing an example of a conductor layer suitable for use in the present invention; Fig. 5 is a sectional front elevation of another example of the power source substrate suitable for use in the present invention; Fig. 6 is a plan view of the example of Fig. 5; Figs. 7-10 are sectional front elevations of other examples of the power source substrate suitable for use in the present invention; Fig. 11 illustrates a second embodiment of an integrated circuit device according to the present invention including connecting terminals therefor; Fig. 12 illustrates a pin-connector connecting system for use in the present invention; and Figs. 13 and 14 illustrate modified examples of a pin connector for use in the present invention. A first embodiment of the integrated circuit device according to the present invention will now be described with reference to the drawings. Fig. 1 is a perspective view of the first embodiment. A plurality of integrating circuit chips 1, such as LSI chips, are mounted on a wiring substrate 2, and covered with a seal cap 3. Pins 4 are provided on the surface of the wiring substrate 2 opposite to the integrated circuit chips 1, these pins 4 and integrated circuit chips 1 being electrically connected. A power source substrate 5 has a structure in which insulating layers 6 and conductor layers 7, are laminated alternately, and bonded together to form a single unit. The example of the power source substrate 5 in Fig. 1 has eight electrically insulating layers 6 and seven feeding conductor layers 7. The power source substrate 5 is provided with through holes 8 into which the terminal pins 4 on the wiring substrate 2 are to be inserted. In the integrated circuit device thus constructed, an electric current is supplied from an external power source device (not shown) to the power source substrate 5, and then from the feeding conductor layers 7 in the power source substrate 5 to the integrated circuit chips 1 through the terminal pins 4 on the wiring substrate 2. The power substrate 5 has an internal heat transmission structure. Preferred heat transmission structures will now be described with reference to Figs. 2-10. Figs. 2-10 except Fig. 6 are sectional views taken along a part of the power source substrate 5 corresponding to the part of the power source substrate 5 cut by the line X-X in fig. 1. Fig. 2 shows an example of the heat transmission structure, in which a filler 10 consisting of powder or short fibers is mixed as a heat transmission means in electrically insulating layers 6. A concrete example of this type of electrically insulating layer is formed by molding a plate out of a mixture of an organic resin, such as epoxy resin and the powder of a ceramic material, such as alumina. When powder is used, the particle size shall be set not larger than the thickness of the electrically insulating layer. The diameter of a fiber shall, of course, be set not larger than the thickness of the same layer. The length of the fiber may be arbitrarily set. The thickness of the electrically insulating layer 6 may be around l00-300µm, and the thickness of the feeding conductor layer 7 around 200-400µm. Reference numeral 8 denotes through holes into which the terminal pins 4 shown in Fig. 1 are inserted. Fig. 9 is a sectional view of a part of a power source substrate having powdered filler 10 in the electrically insulating layers 6, and Fig. 10 shows an example of the heat transmission structure in which a filler 10 of short fibers instead of powder is mixed in the electrically insulating layers 6. Referring to Figs. 9 and 10, the same reference numerals as in Fig. 2 designate the same parts. Fig. 3 shows an example of the heat transmission structure in which minute bores 11 are formed in the feeding conductor layers to furnish the same layers with the heat transmission functions. These bores 11 can be formed by utilizing the photoetching techniques. The bores 11 can sufficiently function if they have a radius of 80-120µm. The shape of these bores is not specially restricted. They may be made circular or semicircular. When bores having a diameter of around or not more than 100µm are formed to furnish the feeding conductor layers with heat transmission functions, the distance between adjacent bores is preferably set to 1-2 mm. It is very preferable that a power source substrate is formed by alternately laminating the filler-containing electrically insulating layers 6 shown in Fig. 2 and the bore-carrying feeding conductor layers 7 shown in Fig. 3. Fig. 4 illustrates an example of a method of forming the semicircular bores 11 shown in Fig. 3, by the photoetching techniques. A bonding alloy film 13 is formed by deposition on one surface of a conductor plate 12 consisting of a copper plate. When the conductor plate 12 consists of copper or a copper alloy, it is preferable to use a copper-silver alloy or a copper-titanium alloy as the material for the bonding alloy film 13. The thickness of the bonding alloy film 13 may be around 2-3µm. After the bonding alloy film 13 has been formed, grooves 14 are then formed by photoetching. After the grooves 14 have been formed, a conductor plate 15 identical with the conductor plate 12 or some other type of conductor plate 15 having excellent conductivity is laminated on the bonding alloy film 13. The material for this conductor plate 15 is selected from the materials which can be bonded to the conductor plate 12 via the bonding alloy film 13. To be concrete, a material identical with that of which the conductor plate 12 is made may be used. These parts are then heated in a vacuum furnace to bond the conductor plate 12 to the conductor plate 15 via the bonding alloy film 13 and thereby combine them unitary. Consequently, the elongated openings of the grooves 14 are closed to form semicircular bores 11. The bonding alloy film 13 is diffused into the interior of the conductors 12, 15 while it is heated under vacuum, and it substantially disappears in a final stage of the heating operation from the interface between the same conductors. The outer surfaces of the conductor plates 12, 15 are then coated with an organic resin, such as epoxy resin, whereby an electrically insulating layer 6 can be formed. The methods of coating the outer surfaces of the conductor plates 12, 15 include a method practiced by dissolving, for example, epoxy resin in acetone, applying the resultant solution to the conductor plates, and thereafter heating the resultant product at 80° - 100°C for 10-10 minutes so as to remove the acetone, the solvent. The feeding conductor layer and electrically insulating layer are thus combined unitary. A plurality of such unitary combined products are then laminated and heated under pressure for several hours. Thus, a power source substrate having a desired laminated structure can be manufactured. Fig. 5 is a sectioned front elevation of a power source substrate having through bores 16 extending in the direction of the thickness thereof, i.e., in the direction which is at right angles to the direction of extension of each of the laminated electrically insulating layers 6 and feeding conductor layers 7 in this power source substrate 5. Fig. 6 is a plan view of a power source substrate having through bores 16. In this case, it is necessary that heat transmission means be also provided in at least the electrically insulating layers 6 or the feeding conductor layers 7. The generation of heat in the power source substrate can further be suppressed by sending a gas, such as the air by a blower, or a liquid, such as water from the lower side thereof, i.e. the side thereof which is not adjacent to a wiring substrate into the through bores 16. The power source substrate thus formed is capable of suppressing a temperature increase by 20-30% as compared with a power source substrate which is not provided with the through bores l6. The number of the feeding conductor layers 7 can be regulated arbitrarily in accordance with the scale of integration of the chips. The thickness of the feeding conductor layer or electrically insulating layer can also be regulated arbitrarily. A means for supplying a coolant to the bores 11 shown in Fig. 3 or the through bores l6 shown in Figs. 5 and 6 may also be selected arbitrarily, and is not specially limited. The filler used as the heat transmission means for the electrically insulating layers consists preferably of a powdered material or fibers. When a powdered material is used, the particle size shall be set not larger than the thickness of the electrically insulating layer. The filler-mixed electrically insulating layer was manufactured in the following manner. 4 parts by weight of BF₃ monoethyl amine was mixed with l00 parts by weight of epoxy resin, and alumina powder having a particle size of about 30µm was then mixed with this mixture so that the weight of the alumina powder occupied 30% of a total weight of the resultant mixture. The acetone was added to this mixture to dissolve the organic resin therein, and the resultant mixture was applied to a feeding conductor plate of copper. The resultant product was heated at about 80°C for 10-10 minutes to dry the same, whereby the acetone, the solvent was removed therefrom. The thickness of the feeding conductor plate is about 300µm, and the thickness of the electrically insulating plate about 200µm. Seven plates thus formed were laminated, and heated under a pressure of about 4,9·10⁵Pa (5 kgf/cm²), at a temperature of 120°C for 4 hours and continuously heated at a temperature of 160°C for 10 hours under the same pressure to harden the resin. The electrically insulating layers and feeding conductor layers were bonded to one another in very good condition. Cracks did not occur in the electrically insulating layer. Fig. 7 is a sectioned front elevation of a part of an example of a power source substrate, in which metal wires 17 of a high heat conductivity, for example, copper wires are inserted in the electrically insulating layers 6 of an organic resin to reduce the thermal resistance. These heat conductive metal wires 17 spot-contact the adjacent feeding conductor layers 7 at several positions, so that the heat accumulated in the electrically insulating layers 6 can be removed efficiently through the feeding conductor layers 7. The metal wires 17 in each of the electrically insulating layers 6 should be disposed in contact with only one of the adjacent feeding conductor layers 7. If the metal wires 7 in the same electrically insulating layer are disposed in contact with both of the adjacent feeding conductor layers, short-circuiting occurs. Therefore, disposing the wires 17 in this manner should be avoided. Fig. 8 shows an example of a power source substrate, in which elongated metallic fibers 18 having a high heat conductivity and molded to a wavy shape are buried in the electrically insulating layers 6. This structure can also obtain the same heat transmission effect as the example of Fig. 7. It is also possible that molding a plurality of elongated metallic fibers to a wavy shape be done after they have been bundled up. Fig. 11 is a schematic diagram of the integrated circuit device connected to an external power source means. A plurality of integrated circuit chips, such as LSI chips are mounted on a wiring substrate 2 and covered with a seal cap 3. The wiring substrate 2 and a power source substrate 5 are connected electrically by terminal pins (not shown). The power source substrate 5 is formed by laminating electrically insulating layers 6 and feeding conductor layers 7 alternately and combining them unitary. The example of Fig. 11 is provided with five electrically insulating layers 6 and four feeding conductor layers 7. Coolant flow passages 20 are formed in the feeding conductor layers 7 in the power source substrate 5. The supplying of an electric current from an external power source means 30 to the feeding conductor layers 7 and the supplying and discharging of a coolant to and from the same layers 7 are done via feeding connecting terminals 28 and conductors 29. Reference numeral 25 denotes a coolant tank, the coolant in which is supplied to coolant inlet ports 27 provided at predetermined portions of the conductors 29. The feeding connecting terminals 28 will now be described with reference to Figs. 12, 13 and 14. Fig. 12 is a perspective view illustrating the construction of the joint portions of a terminal pin 35 of a feeding connecting terminal 28 and a connector 40 in a power source substrate 5. The pin 35 is provided with a coolant passage 31 so that a coolant flows from the coolant tank thereinto. The pin 35 and the external power source means 30 and coolant tank 25 are connected together by conductors 29 extending from the pins 35. The coolant flowing in the coolant passage 31 is supplied thereinto from the coolant tank 25 and via a coolant inlet port 27 provided at a predetermined portion of a conductor 29. The connector 40 is formed in the power source substrate 5. An insulated layer 41 is formed on the inner surface of the connector 40 except the portion of the same inner surface which corresponds to a conductor layer 7a into which an electric current and coolant are introduced via the feeding connecting terminal 28. The introduction of the coolant from the feeding connecting terminal to the conductor layer 7a is done by sending the coolant into the coolant passage 20 in the conductor layer 7a through the coolant passage 31. In order to easily align the coolant passage 31 in the feeding connecting terminal 28 with the coolant passages 20 in the conductor layers 7, it is preferable that a plurality of coolant outlet ports 31a be provided in the connecting terminal 28 as shown in Fig. 13. There is a leakage problem concerning the introduction of coolant from the coolant passage 31 in the feeding connecting terminal 28 into the coolant flow passages 20 in the conductor layers 7. This problem can be solved by forming a leakage-preventing layer (not shown) consisting of rubber on each coolant outlet port 31a so that a clearance does not occur between the coolant outlet ports 31a and coolant flow passages 20. Fig. 14 shows another example of the feeding connecting terminal 28. This connecting terminal 28 is inserted in a hose 50 of Teflon R so that a coolant flows in a space between the outer surface of the connecting terminal 28 and the inner surface of the hose 50. The structure for connecting the power source substrate to the external power source means is not limited to the structure described above. In order to further suppress an increase in the temperature in the integrated circuit device, it is preferable that the coolant be also supplied into the cables by which the external power source means 30 and conductors 29 are connected. The connectors 40 in the feeding conductor layers 7 in the power source substrate and through holes 8 can be formed by a boring operation utilizing the thermal energy including a laser beam or an electron beam, or a boring operation using mechanical tools. During the formation of the through holes 8 in the power source substrate 5, an electrically insulating layer may be provided on the inner surface of each thereof in the same manner as in the production of the connectors 40. However, it is necessary that such an electrically insulating layer is not formed on the inner surface of each through hole in the feeding conductor layers which are connected electrically to the terminal pins 4 on the wiring substrate 2. According to the present invention described above, the heat transmission capability of the power source substrate can be improved markedly, and the integrated circuit chips can be mounted with a high density on a wiring substrate in an integrated circuit device. Especially, since the electrically insulating layers are formed of an organic resin and a heat conductive filler, a compact integrated circuit device can be obtained. Since a coolant is supplied into the coolant flow passages in the power source substrate by utilizing the electric current feeding passages extending from the external power source means to the power source substrate, the integrated circuit device can be made compact as compared with an integrated circuit device in which the supplying of an electric current and coolant is done separately. If the integrated circuit device is formed in this manner, the conductors between the external power source means and feeding connecting terminals are also cooled, so that an increase in the temperature in the integrated circuit device can further be reduced.

Claims: An integrated circuit device having a wiring substrate (2) with integrated circuit chips (1) on one surface thereof and a power source substrate (5) in contact with another surface thereof, the power source substrate containing conductors for transmitting electrical power from an external power source and having means (4) for supplying that electrical power to the chips (1); wherein the power source substrate has a unitary laminated structure of alternate conductor layers (7) and electrically insulating layers (6); at least one of the conductor layers (7), or at least one of the conductor layers (7) and at least one of the insulating layers (6) having heat transmission means therein. A device according to claim 1, wherein the heat transmission means includes through bores (11,20). A device according to claim 1 wherein the bores (20) are for passage of coolant, and the device includes means for supplying coolant to the bores (20). A device according to claim 3, wherein the coolant supply means includes a tank (25) for coolant and conduits (27,28,29) connecting the tank (25) to the bores (20). A device according to claim 4 also having return conduits (27,28,29) for returning coolant from the bores (20) to the tank (25). A device according to claim 4 or claim 5 where at least some of the conduits (27,28,29) also provide a path for electrical connection between the power source substrate (5) and an external power source (30). A device according to any one of claims 2 to 6 wherein the bores are parallel to each other. A device according to any one of the preceding claims, wherein the insulating layers are of organic resin or inorganic material. A device according to claim 8 wherein the inorganic material is a SiC ceramic, alumina or beryllium oxide. A device according to any one of claims 1 to 7, wherein the insulating layers are of a mixture of an organic resin and a heat transmission filler comprising the heat radiating means, the heat transmission filler being in the form of powder or fibres and having a heat conductivity greater than that of the organic resin. A device according to claim 9 or claim 10, wherein the organic resin is at least one of epoxy resin, addition-polymerised polyimide, polyvinylidene fluoride, or phenol formaldehyde. A device according to any one of the preceding claims, wherein the conductor layers (7) are of copper, copper-silver alloy, or copper titanium alloy. A device according to any one of the preceding claims, wherein the means for supplying electrical power to the chips (1) includes terminal pins (4) extending from said another surface of the wiring substrate (2) into holes (8) in the power source substrate (5). An integrated circuit device according to any one of the preceding claims wherein the heat transmission means is in the electrically insulating layer (6) of the power source substrate (5) closest to the wiring substrate (2) An integrated circuit device according to any one of the preceding claims wherein the material of the electrically insulating layers (6) has a coefficient of electrostatic induction of not less than 4 and is bonded to the laminated layers. An integrated circuit device according to any one of claims 2 to 15 wherein said bores (8) introduce a gaseous coolant from the outside of said layers thereinto, the bores (8) having a radius of 80-120µm. An integrated circuit device according to any one of claims 2 to 16 wherein said bores (8) extend through the laminated structure of the power source substrate (5), in a direction perpendicular to said layers. An integrated circuit device according to any one of the preceding claims wherein said heat transmission means is heat conductive metal wire in the electrically insulating layers (6) and spot-contacted to one of the two adjacent layers of a heat and electrically conductive metal. An integrated circuit device according to any one of the preceding claims wherein said heat transmission means includes a heat transmission filler in the form of powder or fibres contained in at least one of said layers of heat and electrically conductive metal (7) and said electrically insulating layers (6) , of the power source substrate (2). An integrated circuit device according to any one of the preceding claims, wherein the power source (5) substrate is in contact with the terminal-pin carrying surface of the wiring substrate (2). An integrated circuit device according to any one of the preceding claims, wherein the conductor layers (7) of the power source substrate (5) are electrically not thermally conductive. An integrated circuit device according to any one of the preceding claims wherein the through bores (8) have terminal-pins (4) inserted therethrough.

Inventors: FUNAMOTO, TAKAO, KAJIWARA, RYOICHI, KATOU, MITUO, MATSUZAKA, TAKESHI, NAKANISHI, KEIICHIROU, SHIDA, TOMOHIKO, SUGAWARA, KATUO, TAKAHASHI, KAZUYA, WACHI, HIROSHI, WATANABE, MASATOSHI, YAMADA, MINORU
Applicants: HITACHI, LTD.
Application year: 1986
Main classification: H05K7
IPC codes: H05K1, H01L23, H05K7