Optically controlled power converting apparatus

Abstract: The present invention provides an optically con­ trolled power converting apparatus using light trigger/­ light quench electrostatic induction thyristors (S₁ to S₆), as switching elements, which can execute the switching operations at a high speed being when they are supplied with light trigger pulses (LT₁ to LT₆) and light quench pulses (LQ₁ to LQ₆). By supplying the light trigger pulses (LT₁ to LT₆) and light quench pulses (LQ₁ to LQ₆) at the timings corresponding to the pulse width modulation, the light trigger/light quench electrostatic induction thyristors (S₁ to S₆) can per­ form predetermined power converting operations.

Description: The present invention relates to a power converting apparatus of, for example, inverters for DC-AC conversion and converters for AC-DC conversion of a single phase and multiphases, inverters for AC-DC-AC conversion to drive a multiphase AC motor, active filters, and the like and, more particularly, to a power converting apparatus in which a light triggered and light quenched electrostatic induction thyristor is used as a switching element, and a light trigger pulse and a light quench pulse are supplied to the thyristor at a timing corresponding to the pulse width modulation, whereby a predetermined power converting operation is performed. As is well known, for example, in the power converting apparatus of the DC-AC converting inverter, AC-DC converter, or the like, a reverse-blocking three-terminal thyristor (SCR), a light triggered thyristor, or the like is used as a switching element. A three-phase AC bridge circuit is widely used as a general circuit constitution. Such a thyristor is the commutation turn-off type element. By performing the turn-on and commutation turn-off at a frequency of, e.g., about 50 to 60 Hz by use of the commutation cycle, this thyristor can execute the DC-AC conversion and AC-DC conversion. On the other hand, for example, in the power converting apparatus which handles a large electric power, such as applied to the DC power transmission, a plurality of light triggered thyristors are connected in series-parallel, thereby allowing the switching operations of the light-triggered turn-on and commutation turn-off to be executed at a frequency of 50 to 60 Hz. However, the power converting apparatus using the three-phase AC bridge circuit using such a commutation turn-off type thyristor has the following problems. The AC frequency which can be handled is as low as 50 to 60 Hz. It takes a long time, e.g., hundreds of µsec, to perform the commutation turn-off of the light triggered thyristor. Therefore, this apparatus is unfitted for the high speed operation. Therefore, a power semiconductor device of the self-turn-off type also has conventionally been used as a switching device for use in the above-mentioned power converting apparatus. As the self-turn-off type power semiconductor device, for example, various kinds of transistors of power bipolar transistor, power MOS (Metal Oxide semiconductor) field effect transistor (FET), power electrostatic induction transistor (SIT), and the like, and a gate turn-off thyristor (GTO) are used. The self-turn-off type semiconductor devices such as the above transistors, gate turn-off thyristor, and the like can perform the switching operations as their gates are electrically controlling the gate (or base). Also, the time required for turn-off is so short to be a few to tens of µsec. Therefore, by constituting a single-phase or multiphase inverter or converter in a manner such that the self-turn-off type semiconductor device executes the switching operations by use of, e.g., a control system due to a pulse width modulation, such a device can advantageously realize the high-speed operation. In the power converting apparatus using such a self-turn-off type semiconductor device, however, a control circuit must be provided to control the semiconductor device since the gate (or base) needs to be electrically controlled. The apparatus is inevitably is complicated. In the gate turn-off thyristor, control circuits are necessary for both of the turn-on and turn-off, respectively. This will also likely complicate the constitution. Moreover, in the case of handling a large electric power, a plurality of semiconductor elements are connected in series-parallel, and more circuit elements are required to further complicate the structure. Moreover, since it is difficult to electrically isolate the portion which handles a large electric power from the control circuit portion, the magnitude of the electric power which can be handled is also limited. Prior art document INTERNATIONAL ELECTRON DEVICES MEETING, San Francisco, December 9-12, 1984, pp. 435-438, IEDM; J. NISHIWAZA et al.: "A very high sensitivity and very high speed light triggered and light quenched static induction thyristor (LTQSITHY)" mentions the possibility of integration of a triggering transistor/thyristor and a quenching transistor with a main electrostatic induction photothyristor (SIPThy): The emitter of a p-channel electrostatic induction phototransistor (SIPT) is connected to the p-gate of a SIPThy. The integration of a SIPT and a SIPThy is also known from document JAPANESE JOURNAL OF APPLIED PHYSICS 16TH INTERNATIONAL CONFERENCE SOLID STATIC DEVICES AND MATERIALS, Kobe, 30th August-1st September 1984, pages 321-324, Tokyo JP; JUN-ICHI-NISHIZAWA et al.: "Totally light controlled thyristor-optically triggerable and optically quenchable static induction photo-thyristor". According to this document, a punch through bipolar transistor (BPT) operated in static induction transistor (SIT) mode is equivalent to a SIPT. Finally, document EP-A-158 186 (cited under Art. 54(3) EPC) discloses also a SIPT as an electrostatic type bipolar phototransistor. It is an object of the invention to provide an optically controlled power converting apparatus in which a constitution is simple, so that its fabrication is also simplified, a high speed operation can be performed, a large electric power can be also handled due to the light triggering/light quenching operations by way of the light, and a fairly good performance is derived. To solve this object, the present invention provides a power converting apparatus as specified in claim 1. According to the optically controlled power converting apparatus light triggered and light quenched electrostatic induction thyristors are used as switching elements, and light trigger pulses and light quench pulses are irradiated to the light triggered and light quenched electrostatic induction thyristors at the timings corresponding to a pulse width modulation, thereby allowing predetermined power converting operations to be performed. The embodiment of the invention in which an exclusive property or privilege is claimed are defined as follows: Fig. 1a is an example of a side cross-sectional view of a single gate, light triggered and light quenched electrostatic induction thyristor; Fig. 1B is an example of a side cross-sectional view of a double gate, light triggered and light quenched electrostatic induction thyristor; Fig. 2A shows the light triggering characteristics of the thyristors shown in Figs. 1A; Fig. 2B shows the light quenching characteristic of the thyristors shown in Figs. 1A; Fig. 3 is an equivalent circuit diagram of the thyristors shown in Figs. 1A and 1B; Fig. 4 shows an optically controlled power converting apparatus of the present invention, for use in combination with a light triggered and light quenched electrostatic induction thyristor and is a circuit arrangement diagram showing a single-phase inverter for DC-AC conversion; Fig. 5 is a circuit arrangement diagram showing a level comparator in a pulse width modulating section of the inverter; Figs. 6A to 6F are timing charts for explaining the operation of the inverter, respectively; Fig. 7 is a circuit diagram of a three-phase inverter for DC-AC conversion used as the optically controlled power converting apparatus for a light triggered and light quenched electrostatic induction thyristor; Fig. 8 is a block arrangement diagram showing a pulse width modulating section of the inverter; Figs. 9A to 9J are timing charts for explaining the operation of the inverter, respectively; Fig. 10 is a block circuit diagram of an inverter for AC-DC-AC conversion to drive the three-phase AC motor used as the optically controlled power converting apparatus for a light triggered and light quenched electrostatic induction thyristor; Fig. 11 is a circuit diagram of a single-phase converter for AC-DC conversion used as the optically controlled power converting apparatus for a light triggered and light quenched electrostatic induction thyristor; Figs. 12A to 12D are timing charts for explaining the operation of the converter, respectively; Fig. 13 is a circuit diagram of a three-phase converter for AC-DC conversion used as the optically controlled power converting apparatus for a light triggered and light quenched electrostatic induction thyristor; Figs. 14A to 14G are timing charts for explaining the operation of the converter, respectively; Fig. 15 is a circuit arrangement diagram showing the concept of an active filter; Fig. 16 is a detailed block diagram of the active filter used in the inverter circuit of the light triggered and light quenched electrostatic induction thyristor; Figs. 17A to 17C, 18A to 18C, 19A, 19B, and 20A to 20F are timing charts of various signals, explaining the operation of the active filter, respectively; and Fig. 21 is a circuit arrangement diagram showing a series-parallel connection of light triggered and light quenched electrostatic induction thyristors. Prior to describing an embodiment of the present invention, a light triggered and light quenched electrostatic induction thyristor (hereinafter, referred to as an LTQ SI thyristor) which is used in this invention will be described hereinbelow. Namely, this LTQ SI thyristor can be turned on and turned off by a light and is constituted by connecting a photosensitive element to a gate region of tee electrostatic induction thyristor which can be directly triggered by the light or can be indirectly triggered by the light. As such a photosensitive element, it is desirable to use the element having a high light amplification factor and a high response speed adapted to be externally connected to or integrally connected to the gate of the electrostatic induction thyristor. For example, an electrostatic induction phototransistor or the like is used. Fig. 1A shows an example of the integrated structure of an LTQ SI thyristor having a single gate structure. Namely, a p⁺ anode region 12 and a p⁺ gate region 13 are formed on the lower and upper surfaces of an n⁻ type high resistivity semiconductor region 11 in the diagram, respectively. An anode terminal 14 of the LTQ SI thyristor is connected to the p⁺ anode region 12. The p⁺ gate region 13 serves as a first gate region of the LTQ SI thyristor and also serves as a source region of an electrostatic induction phototransistor (hereinafter, referred to as an SIPT) 15. An n⁻ type high resistivity epitaxial region 16 is formed on the p⁺ gate region 13. An n⁺ cathode region 17 is formed in the n⁻ high resistance epitaxial region 16. A cathode terminal 18 of the LTQ SI thyristor is connected to the n⁺ cathode region 17. A channel region 19 of the SIPT 15 is formed on the p⁺ gate region 13. Channel region 19 is formed simultaneously with epitaxial region 16. In the case where channel region 19 is formed as an n⁻ layer, SIPT 15 is constituted as a punching through type bipolar phototransistor. In the case where channel region 19 is formed as a p⁻ layer, SIPT 15 is constituted as a p⁻ channel SIPT. In any of these cases, SIPT 15 is constituted as a transistor having substantially the equivalent function. An n⁺ gate (base) region 20 is formed in channel region 19. The n⁺ gate (base) region 20 is connected to a gate (base) terminal 22 through a gate (base) electrode 21. A p⁺ drain (collector) region 23 is formed in the channel region 19 and connected to a drain (collector) terminal 25 through a drain (collector) electrode 24. The LTQ SI thyristor of the single gate structure constituted as mentioned above is the LTQ SI thyristor of the type which is directly triggered by the light. When a light triggering pulse LT is now irradiated in the direction indicated by an arrow in the diagram, electron-hole pairs are generated in the n⁻ type high resistivity semiconductor region 11. The photogenerated holes are accumulated in p⁺ gate region 13 and cause an increase in gate potential of p⁺ gate region 13. On the other hand, the photogenerated electrons are accumulated in the junction portion of the p⁺ anode region 12 and the n⁻ type semiconductor region 11 and cause the holes to be injected from the p⁺ anode region 12 into n⁻ semiconductor region 11. The holes injected into the semiconductor region 11 are accumulated into p⁺ gate region 13. Therefore, the potential of p⁺ gate region 13 gradually increases and when it exceeds a predetermined threshold level, the LTQ SI thyristor is turned on. When the LTQ SI thyristor is in the turn-on state as mentioned above, the hole current from the p⁺ anode region 12 continuously flows through the n⁻ type semiconductor region 11, the p⁺ gate region 13, and the n⁻ type epitaxial region 16 to the n⁺ cathode region 17. The electron current from the n⁺ cathode region 17, on the other hand, continuously flows through the n⁻ type epitaxial region 16, the p⁺ gate region 13, and the n⁻ type semiconductor region 11 to the p⁺ anode region 12. At this time, SIPT 15 is in the off state. When a light quenching pulse LQ is irradiated to the SIPT 15 in the direction indicated by arrows in the diagram in the turn-on state of such an LTQ SI thyristor, electron-hole pairs are generated in n⁻ or p⁻ channel region 19. The photogenerated electrons are accumulated into n⁺ gate (base) region 20 and cause the potential of n⁺ gate (base) region 20 to be changed. Then, in response to this potential change of n⁺ gate (base) region 20, a conductive channel is formed between the p⁺ source (emitter) region 13 of the SIPT and the p⁺ drain (collector) region 23 of the SIPT. Thus, the holes which have already been accumulated in the p⁺ source (emitter) region 13 of the SIPT in the turn-on state flow into the p⁺ drain (collector) region 23 of the SIPT through the conductive channel. Therefore, by applying a negative voltage to drain (collector) terminal 25, the holes accumulated in p⁺ gate region 13 and the holes which are injected from p⁺ anode region 12 can be taken out through drain (collector) terminal 25 at a very high speed. At the same time, the potential of p⁺ gate region 13 also increases to a level necessary to turn off the LTQ SI thyristor and causes the injection of the electrons from the n⁺ cathode region 17 to be blocked. In this way, the LTQ SI thyristor is turned off. Although the voltage which is applied to drain (collector) terminal 25 may be at a zero level, a negative voltage is desirable to turn off the LTQ SI thyristor at a high speed as mentioned above. Fig. 1B shows an example of the integrated structure of an LTQ SI thyristor of a double-gate structure, in which the same portions as those in the single-gate structure are designated by the same reference numerals. The double-gate structure in Fig. 1B differs from the single-gate structure in Fig. 1A with respect to the point that an n⁺ gate region 26 is embedded in the n⁻ type high resistivity semiconductor region 11 in front of p⁺ anode region 12. With this structure in Fig. 1B, when the light triggering pulse LT is supplied, the electrons photo-generated in the n⁻ type semiconductor region 11 are accumulated into the n⁺ gate region 26. Therefore, the injection efficiency of holes from the p⁺ anode region 12 to the p⁺ gate region 13 is much higher than that in the single-gate structure. In the LTQ SI thyristors having the single-gate and double-gate structures, the punching through type bipolar base structure which performs the operation substantially similar to that of the electrostatic induction transistor (hereinafter, referred to as the SIT) gate structure which is formed by the p+ gate region 13 and the n⁻ channel region 27 or of the SIT gate structure which is formed by the n⁺ gate region 26 and n⁻ base region 28 has the feature such that its light amplification factor increases as the light intensity decreases. The light trigger sensitivity of this structure is better than that of the bipolar base structure in the conventional light triggered thyristor by about two orders. Namely, the light trigger sensitivity of the LTQ SI thyristor is higher than the conventional light trigger thyristor, so that the time required to turn on the thyristor can be reduced and it can be turned on at a high speed. In the case of the single-gate structure, since the electrons which are accumulated near p⁺ anode region 12 are recombined with the holes in p⁺ anode region 12 and extinguished, a tailing current is generated when the thyristor is turned off. In the case of the double-gate structure, however, since the electrons are accumulated into n⁺ gate region 26, for example, a terminal (not shown) is connected to the n⁺ gate region 26, an n channel SIPT (not shown) having the structure similar to SIPT 15 integrally connected to p⁺ gate region 13 is connected to this terminal and anode terminal 14, and light quenching pulse LQ is simultaneously irradiated, thereby making it possible to also take out the electrons accumulated in n⁺ gate region 26 and to turn off the thyristor at a high speed. In this case, the tailing current component generated in the single-gate structure is not appeared. Although the structure and operation of the LTQ SI thyristor have been described above, the gate structure of the thyristor portion is not limited to the embedded gate structure but may be obviously the recessed gate structure or planar gate structure. As the photosensitive element for light quenching, it is sufficient to use an element which can respond to the light. To improve the light amplification factor, it is also possible to take a measure to use an amplifying gate structure or the like. The single-gate type SI thyristor of the class of 2500V and 300A was operated at a duty cycle of 50% and the switching losses were obtained by the experiments. The sum of the switching losses when the SIT was turned on and off was 0.2 to 0.3 J/pulse. In this case, the voltage drop in the forward direction was 1.72V at 300A. Therefore, a conversion efficiency η from the direct current to the alternating current of the single-gate type SI thyristor becomes due to a linear approximation, in which f is a switching operating frequency. When f is 60 Hz, η is above 99.9%. When f is 11 kHz, η is 99%. Therefore, it will be understood that the value of η is very high. Therefore, the single-gate type SI thyristor of the class of 2500V and 300A has a power conversion efficiency η above 99% until operating frequency f of about 10 kHz. Therefore, by use of the double-gate type structure, the switching losses further decrease to a value of 0.02 to 0.03 J/pulse. At this time, power conversion efficiency η of 99% can be held until operating frequency f of about 100 kHz. In place of electrically performing the switching operation of the SI thyristor which operates at a high frequency as mentioned above, the LTQ SI thyristor performs the switching operation due to the light by use of light triggering pulse LT and light quenching pulse LQ. Therefore, the time required for turn-on and turn-off is short and the high speed operation can be performed. A high power conversion efficiency can be held until a high frequency range. Figs. 2A and 2B show the light triggering characteristic and light quenching characteristic of the LTQ SI thyristors, respectively. First, Fig. 2A shows the relation between a turn-on delay time T don and a light triggering power P LT when light triggering pulse LT was irradiated. This graph shows the results in the case where the anode current is 1A and the applied voltage between the anode and the cathode was changed to 100V (▿), 200V (⋄), 300V (□), 400V (▵), and 500V ( ○). A group A shows the case where the thyristor is directly triggered by the light. Groups B and C show the case where the thyristor is indirectly triggered by the light, by utiling the amplifying gate. Fig. 2B shows the relation between a turn-off delay time T doff and a light quenching power P LQ when light quenching pulse LQ was supplied. In this case, the anode current and applied voltage between the anode and the cathode are the same as those mentioned above. Groups D and E show the case of the direct light quench when the quenching SIPT was changed. Groups F and G show the case of the indirect light quench. In any of these cases, it will be understood that both of the turn-on delay time Tdon and the turn-off delay time T doff are so short to be on the order of about 1µsec in spite of the fact that the anode current is 1A and the anode-cathode applied voltage is hundreds of volts and also the light power is very small, e.g., 10 µW to hundreds of µW. Fig. 3 shows a form as a circuit diagram of the LTQ SI thyristor using the p channel SIPT as a photosensitive element for the light quenching operation. Namely, in the diagram, a light triggered SI thyristor 29 is directly triggered by light triggering pulse LT. In the diagram, a p channel SIPT 30 for the light quenching is made conductive by light quenching pulse LQ. By taking out the holes accumulated in a gate 31 of the SI thyristor 29 and the hole current from the anode, SIPT 30 functions so as to turn off the light triggered SI thyristor 29. In the diagram, reference numeral 32 denotes an anode terminal; 33 is a cathode terminal; 34 a drain terminal of SIPT 30; and 35 a gate terminal of the SIPT 30. In this case, the potential common to that of cathode terminal 33 may be applied to drain terminal 34 of SIPT 30. However, by applying a negative bias voltage, the holes can be taken out faster and the thyristor can be turned off at a high speed. On the other hand, in place of directly triggering the SI thyristor 29 by the light, SIPTs for trigger are individually provided and the amplification gate triggering can be also carried out. Further, instead of directly irradiating the light to the SIPT 30, an SIPT for driving the SIPT 30 is individually provided and the amplification gate triggering may be indirectly executed. A feature of the present invention will be summarized as follows. As mentioned above, the LTQ SI thyristor which performs the high speed switching operation due to the light control is used as a switching element. Light triggering pulse LT and light quenching pulse LQ are irradiated to the LTQ SI thyristor at the timing corresponding to the pulse width modulation, thereby allowing a predetermined power converting operation to be executed. An embodiment of the invention using the LTQ SI thyristors as mentioned above will now be described in detail hereinbelow with reference to the drawings. First, Fig. 4 shows a single-phase inverter for a DC-AC conversion including the LTQ SI thyristors. Namely, in the diagram, S₁ to S₄ denote LTQ SI thyristors. By supplying light triggering pulses LT₁ to LT₄ and light quenching pulses LQ₁ to LQ₄ to LTQ SI thyristors S₁ to S₄, respectively, these thyristors perform the switching operations. A DC voltage E which is sent from a DC power supply system is indicated as a constant voltage source 36. Further, an output AC voltage e₀ is taken out from between a terminal 37 connected to the connecting point of LTQ SI thyristors S₁ and S₂ and a terminal 38 connected to the connecting point of LTQ SI thyristors S₃ and S₄. Fig. 5 shows a level comparator 39 of a pulse width modulating section to perform the switching controls of LTQ SI thyristors S₃ and S₄. An absolute value signal of a sine wave having the same frequency as a frequency f₀ of output signal e₀ which is output from between terminals 37 and 38 is supplied to a non-inverting input terminal 40 of level comparator 39. On the other hand, a carrier triangular wave signal having frequency f c higher than that of the absolute value signal of the sine wave is supplied to an inverting input terminal 41 of level comparator 39. Namely, when the absolute value signal of the sine wave and the carrier triangular wave signal as shown in Fig. 6 are supplied to non-inverting and inverting input terminals 40 and 41 of level comparator 39, a pulse width modulation signal as shown in Fig. 6B is output from an output terminal 42 of level comparator 39. Fig. 6C shows timing charts for the switching operations of LTQ SI thyristors S₁ to S₄, in which a low level (L) shows the turn-off state and a high level (H) shows the turn-on state. Namely, LTQ SI thyristors S₁ and S₂ are oppositely switching-controlled at every half period of the sine wave signal. On the other hand, LTQ SI thyristor S₃ is switching-controlled in correspondence to an output signal of level comparator 39 (refer to Fig. 6B). LTQ SI thyristor S₄ is switching-controlled oppositely to LTQ SI thyristor S₃. Each timing waveform shown in Fig. 6C corresponds to the pulse width modulation. Fig. 6D show the timings of supplying light triggering pulses LT₃ and LT₄ and light quenching pulses LQ₃ and LQ₄ which are irradiated to LTQ SI thyristors S₃ and S₄ in order to allow thyristors S₃ and S₄ to execute the switching-operations at the timings shown in Fig. 6C. Namely, light triggering pulse LT₃ which is supplied to LTQ SI thyristor S₃ is generated in response to the leading portion of the timing waveform shown at S₃ in Fig. 6C. Light quenching pulse LQ₃ is generated in response to the trailing portion of the timing waveform shown at S₃ in Fig. 6C. Thus, thyristor S₃ can be switching-controlled at the timing shown at S₃ in Fig. 6C. Similarly, light triggering pulse LT₄ which is irradiated to LTQ SI thyristor S₄, on the other hand, is similarly generated in response to the leading portion of the timing waveform shown at S₄ in Fig. 6C. Light quenching pulse LQ₄ is generated in response to the trailing portion of the timing waveform shown at S₄ in Fig. 6C. Thus, thyristor S₄ can be switching-controlled at the timing shown at S₄ in Fig. 6C. Further, although not shown in Figs. 6A to 6F, light triggering pulses LT₁ and LT₂ and light quenching pulses LQ₁ and LQ₂ which are supplied to LTQ SI thyristors S₁ and S₂ are generated in response to the trailing portions of the timing waveforms shown at S₁ and S₂ in Fig. 6C. Thus, thyristors S₁ and S₂ can be switching-controlled at the timings shown at S₁ and S₂ in Fig. 6C. Light triggering pulses LT₁ to LT₄ and light quenching pulses LQ₁ to LQ₄ which are generated at the above-mentioned timings are supplied to LTQ SI thyristors S₁ to S₄ through light transmitting media such as, for example, optical fiber cables or the like. In this case, for example, light emitting diodes, semiconductor lasers, lamps, or the like may be used as a light source. As intensities of the light beams irradiated as shown in Figs. 2A and 2B as well, they may be set to a value of a few to hundreds of µW for the light triggering and to a value of about tens of µW to a few mW for the light quenching. By respectively supplying light triggering pulses LT₁ to LT₄ and light quenching pulses LQ₁ to LQ₄ to LTQ SI thyristors S₁ to S₄ at the foregoing timings, output e₀ which was subjected to the pulse width modulation as shown in Fig. 6E is generated between terminals 37 and 38. The peak value of output e₀ is equal to the output voltage E of constant voltage source 36. For the mean value of this output, it is possible to obtain an AC electric power which doesn't include low-order harmonics as shown in Fig. 6F. Consequently, the DC-AC conversion is carried out. In this case, as mentioned above, a frequency of an output AC signal is determined by frequency f₀ of the absolute value signal of the sine wave which is supplied to non-inverting input terminal 40 of level comparator 39. Frequency f₀ is not limited to the ordinary commercially available power source frequency (50 to 60 Hz) as in the conventional one but may be set to a high value near the switching operating frequencies (e.g., 10 to 100 kHz) of the foregoing LTQ SI thyristors. Even in such a frequency band as well, the high efficient power conversion can be performed. Fig. 7 shows a three-phase inverter for the DC-AC conversion including LTQ SI thyristors. In the diagram, S₁ to S₆ denote LTQ SI thyristors and perform the switching operations in response to with light triggering pulses LT₁ to LT₆ and light quenching pulses LQ₁ to LQ₆, respectively. DC voltage E which is sent from a DC power supply system (not shown) is represented by a constant voltage source 43. Further, the connecting point of thyristors S₁ and S₂ is connected to an output terminal 44 of an R-phase output signal. The connecting point of thyristors S₃ and S₄ is connected to an output terminal 45 of an S-phase output signal. The connecting point of thyristors S₅ and S₆ is connected to an output terminal 46 of a T-phase output signal. Fig. 8 shows the pulse width modulating section to execute the switching controls of LTQ SI thyristors S1 to S₆. Namely, in the diagram, a three-phase AC signal generating source 47 generates the R-phase, S-phase, and T-phase signals. The R-phase, S-phase, and T-phase signals which are generated from generating source 47 are supplied to respective non-inverting input terminals (+) of level comparators 48 to 50, respectively. Carrier triangular wave signals which are generated from a carrier triangular wave signal generator 51 are supplied to respective inverting input terminals (-) of level comparators 48 to 50, respectively. The offsets of the carrier triangular wave signals which are generated from generator 51 are adjusted by an output voltage of a constant voltage source 52. When it is now assumed that the R-phase, S-phase, and T-phase signals, and the carrier triangular wave signals as shown in Fig. 9A were generated from three-phase AC signal generating source 47 and carrier triangular wave signal generator 51, R-phase, S-phase, and T-phase pulse signals as shown in Figs. 9B, 9C, and 9D are output from output terminals 53 to 55 of level comparators 48 to 50, respectively. The R-phase pulse signal shown in Fig. 9B decides the timings to allow thyristors S₁ and S₂ to perform the switching operations. The S-phase pulse signal shown in Fig. 9C determines the timings to allow thyristors S₃ and S₄ to execute the switching operations. The T-phase pulse signal shown in Fig. 9D decides the timings to allow thyristors S₅ and S₆ to carry out the switching operations. The respective pulse signals of the R, S, and T phases are the pulse width modulated signals. Namely, an explanation will now be made with respect to only the R phase. Light triggering pulse LT₁ and light quenching pulse LQ₁ to be supplied to thyristor S₁ are generated at the leading edge and trailing edge of the R-phase pulse signal as shown in Fig. 9E, respectively. Light triggering pulse LT₂ and light quenching pulse LQ₂ to be supplied to thyristor S₂ are generated at the trailing edge and leading edge of the R-phase pulse signal as shown in Fig. 9F, respectively. Therefore, the switching operations of thyristors S₁ and S₂ are performed at the timings as shown in Fig. 9G so as to become opposite to each other. In Fig. 9G, a low level (L) shows the turn-off state and a high level (H) shows the turn-on state. Although not shown in Figs. 9A to 9J, on the other hand, light triggering pulses LT₃ and LT₄ and light quenching pulses LQ₃ and LQ₄ to be supplied to LTQ SI thyristors S₃ and S₄ corresponding to the other S phase are generated on the basis of the S-phase pulse signal in a manner similar to the above; and light triggering pulses LT₅ and LT₆ and light quenching pulses LQ₅ and LQ₆ to be supplied to LTQ SI thyristors S₅ and S₆ corresponding to the other T phase are also likewise generated on the basis of the T-phase pulse signal. Namely, light triggering pulse LT₃ and light quenching pulse LQ₃, which will be supplied to thyristor S₃, are generated at the leading and trailing edges of the S-phase pulse signal, respectively. Light triggering pulse LT₄ and light quenching pulse LQ₄ to be supplied to thyristor S₄ are generated at the trailing and leading edges of the S-phase pulse signal, respectively. Similarly, light triggering pulse LT₅ and light quenching pulse LQ₅, which will be supplied to thyristor S₅ are generated at the leading and trailing edges of the T-phase pulse signal, respectively. Light triggering pulse LT₆ and light quenching pulse LQ₆ to be supplied to thyristor S₆ are generated at the trailing and leading edges of the T-phase pulse signal, respectively. By respectively irradiating light triggering pulses LT₁ to LT₆ and light quenching pulses LQ₁ to LQ₆ to thyristors S₁ to S₆ at the timings mentioned above, the pulse width modulated R-phase, S-phase, and T-phase outputs as shown in Figs. 9H, 9I, and 9J are generated from output terminals 44 to 46, respectively. The respective mean values of the R-phase, S-phase, and T-phase outputs become the three-phase electric power including no low-order harmonics. In this way, the three-phase DC-AC conversion is carried out. In this case, the frequency of the three-phase AC electric power is determined by the frequencies of the R-phase, S-phase, and T-phase signals generated from three-phase AC signal generating source 47. This frequency, on the other hand, can be raised to a value near the switching operating frequencies (about 10 to 100 kHz) of the foregoing LTQ SI thyristors. Even in such a frequency band as well, the high-efficiency power conversion can be performed. The single-phase DC-AC converting inverter shown in Fig. 4 is also similar to the above three-phase DC-AC inverter. Namely, light triggering pulse LT and light quenching pulse LQ are generated at the timing corresponding to the pulse width modulation signal, thereby allowing the LTQ SI thyristor to execute the switching operation. In this manner, the optical pulse width modulation (OPWM) control is executed. Therefore, the power conversion can be completely performed due to only two light beams and the power conversion can be safely and effectively carried out without considering the electrical insulation between the portion which handles a large electric power and the portion which handles the switching control as in the conventional apparatus. These effects can be also apparently applied to each of the embodiments which will be explained hereinafter. Fig. 10 shows an inverter for AC-DC-AC conversion including LTQ SI thyristors to drive a three-phase AC motor. Namely, in the diagram, outputs of a three-phase AC power source are supplied to input terminals 56 to 58. The three-phase alternating currents supplied to input terminals 56 to 58 are converted to DC voltages by a rectifier 59 consisting of rectifying elements D₁ to D₆. These DC voltages are converted to the R-phase, S-phase, and T-phase AC electric powers of variable frequencies by a three-phase DC-AC converting inverter (the same as that shown in Fig. 7) consisting of LTQ SI thyristors S₁ to S₆ and used to drive a three-phase AC motor 60. The position and rotating speed of a rotor (not shown) of motor 60 are detected by a pulse generator 61. A detection signal which is output from pulse generator 61 is supplied to a vector arithmetic operating circuit 62. Operating circuit 62 vector-operates a desired torque of motor 60 on the basis of a speed control signal from a speed control circuit 64 which is controlled by an operating section 63 for adjustment and the foregoing detection signal. Operating circuit 62 then outputs a vector signal to an inverter control circuit 65. Inverter control circuit 65 generates a predetermined pulse width modulation signal on the basis of the vector signal supplied and outputs light triggering pulses LT₁ to LT₆ and light quenching pulses LQ₁ to LQ₆ supplied to LTQ SI thyristors S₁ to S₆ at the timings corresponding to the pulse width modulation signal, respectively. Therefore, the three-phase inverter for the DC-AC conversion consisting of thyristors S₁ to S₆ is controlled and the torque and rotating speed of motor 60 are controlled. By operating operating section 63, the generation timings of light triggering pulses LT₁ to LT₆ and light quenching pulses LQ₁ to LQ₆ which are output from inverter control circuit 65 are changed, thereby making it possible to vary the torque and rotating speed of motor 60. In this case, the frequencies of the three-phase signals which are supplied to motor 60 can be continuously produced within a range of a few Hz to 100 kHz due to the switching operating frequencies of LTQ SI thyristors S₁ to S₆. Power conversion efficiency η at this time is also held to a value of above 99%. Therefore, by combining with a high speed dedicated motor, this inverter can be also applied to a high-speed (tens of thousands of rpm) and high-capacity apparatus. Fig. 11 shows a single-phase converter including LTQ SI thyristors for AC-DC conversion. In the diagram, LTQ SI thyristors S₁ to S₄ perform the switching operations in response to light triggering pulses LT₁ to LT₄ and light quenching pulses LQ₁ to LQ₄, respectively. A single-phase AC voltage v a applied from a single-phase AC power supply system (not shown) is indicated as an AC power source 66. In the diagram, L denotes a smoothing reactor and 67 is a DC load circuit. By use of a pulse width modulating section as shown in Fig. 5, an absolute value signal of a sine wave and a carrier triangular wave signal which are synchronized with output v a of AC power source 66 as shown in Fig. 12A are level compared, thereby allowing LTQ SI thyristors S₁ to S₄ to be switching-controlled on the basis of the resultant pulse width modulation signal, respectively. Namely, Fig. 12B shows the timings for allowing thyristors S₁ to S₄ to execute the switching operations, respectively. In the diagram, a low level (L) denotes the turn-off state and a high level (H) indicates the turn-on state. In this case, the absolute value signal of the sine wave and the carrier triangular wave signal which are shown in Fig. 12A are supplied to the non-inverting input terminal (+) and inverting input terminal (-) of level comparator 39 shown in Fig. 5, respectively. The resultant pulse width modulation signal corresponds to the timing waveform shown at S₄ in Fig. 12B to allow thyristor S₄ to perform the switching operation. Thyristor S₃ is switching-controlled in a manner opposite to thyristor S₄. On the other hand, thyristors S₁ and S₂ are oppositely switching-controlled at every half period of the sine wave signal. Fig. 12C shows the timings of supplying light triggering pulses LT₃ and LT₄ and light quenching pulses LQ₃ and LQ₄ to thyristors S₃ and S₄ so that thyristors S₃ and S₄ execute the switching operations at the timings shown in Fig. 12B. Namely, light triggering pulse LT₃ and light quenching pulse LQ₃ to be supplied to thyristor S₃ are generated at the leading and trailing edges of the timing waveform shown at S₃ in Fig. 12B, respectively. Light triggering pulse LT₄ and light quenching pulse LQ₄ to be supplied to thyristor S₄ are generated at the leading and trailing edges of the timing waveform shown at S₄ in Fig. 12B, respectively. Thus, LTQ SI thyristors S₃ and S₄ can be switching-controlled at the timings shown at S₃ and S₄ in Fig. 12B. Although not shown in Figs. 12A to 12D, light triggering pulses LT₁ and LT₂ and light quenching pulses LQ₁ and LQ₂ which will be supplied to thyristors S₁ and S₂ are generated at the leading and trailing edges of the timing waveforms shown at S₁ and S₂ in Fig. 12B. Thus, thyristors S₁ and S₂ can be switching-controlled at the timings S₁ and S₂ in Fig. 12B. By supplying light triggering pulses LT₁ to LT₄ and light quenching pulses LQ₁ to LQ₄ to thyristors S₁ to S₄ at the timings mentioned above, a current I a having no phase difference with v a as shown in Fig. 12D flows. Thus, a direct current I d as the mean value of I a is output to DC load circuit 67. In this way, the single-phase AC-DC conversion is performed. Fig. 13 shows a three-phase converter including LTQ SI thyristors for AC-DC conversion. In the diagram, LTQ SI thyristors S₁ to S₆ execute the switching operations in response to light triggering pulses LT₁ to LT₆ and light quenching pulses LQ₁ to LQ₆, respectively. Reference numerals 68 to 70 denote three-phase AC power sources, L is the smoothing reactor, and 71 is a DC load circuit. By use of a pulse width modulating section as shown in Fig. 8, R-phase, S-phase, and T-phase signals and carrier triangular wave signal which are synchronized with the three-phase AC power source as shown in Fig. 14A are level compared. Thyristors S₁ to S₆ are respectively switching-controlled on the basis of the resultant pulse width modulation signals. Namely, thyristor S₁ is switching-controlled on the basis of the pulse width modulation signal which is derived by level comparing the positive side of the R-phase signal with the carrier triangular wave signal. Thyristor S₂ is switching-controlled on the basis of the pulse width modulation signal which is obtained by level comparing the negative side of the R-phase signal with the carrier triangular wave signal. Thyristor S₃ is switching-controlled on the basis of the pulse width modulation signal which is derived by level comparing the positive side of the S-phase signal with the carrier triangular wave signal. Thyristor S₄ is switching-controlled on the basis of the pulse width modulation signal which is obtained by level comparing the negative side of the S-phase signal with the carrier triangular wave signal. Further, thyristor S₅ is switching controlled on the basis of the pulse width modulation signal which is derived by level comparing the positive side of the T-phase signal with the carrier triangular wave signal. Thyristor S₆ is switching controlled on the basis of the pulse width modulation signal which is obtained by level comparing the negative side of the T-phase signal with the carrier triangular wave signal. Namely, thyristors S₁ to S₆ execute the switching operations at the timings shown in Figs. 14B to 14G, respectively. In this case, the L level periods of the timing waveforms shown in Figs. 14B to 14G indicate the turn-off state of thyristors S₁ to S₆. The high level (H) periods represent the turn-on state. By supplying light trigger pulses LT₁ to LT₆ and light quench pulses LQ₁ to LQ₆ to LTQ SI thyristors S₁ to S₆ at the timings mentioned above, the R-phase, S-phase, and T-phase signals are converted to the direct currents and synthesized and supplied to smoothing reactor L and DC load circuit 71. In this manner, the three-phase AC-DC conversion is executed. Power factors of the single-phase and three-phase converters for the AC-DC conversion as mentioned above are 1.0 irrespective of a variation in DC load, and no lower orders of harmonics are generated on the AC side. On the other hand, in any of the inverter for the DC-AC conversion and the converter for the AC-DC conversion as well, a multiphase AC signal of, e.g., six phases, twelve phases, or the like can be handled without limiting to three phases. An example in the case where the present invention is applied to an active filter will now be described. Fig. 15 shows an active filter of the harmonics cancelling type. The concept will be first simply explained. In the diagram, reference numeral 72 denotes an infinite bus bar; a reactance L₁ and a resistor R are line impedances; 73 a harmonics current source; and 74 an active filter. The active filter 74 outputs a harmonics current -I ˙ c having the same magnitude as that of a harmonics current I ˙ c which is supplied from the harmonics current source 73 to the infinite bus bar 72 and having the inverted polarity. Both harmonics currents I ˙ c and -I ˙ c are synthesized, thereby preventing harmonics current I ˙ c from flowing into bus bar 72. Fig. 16 shows a practical arrangement of active filter 74. An explanation will now be made hereinbelow with reference to timing charts shown in Figs. 17 to 20. Namely, a distortion current as shown in Fig. 17A which is output from harmonics current source 73 (in Figs. 17A to 17C, the waveforms on the right side show the case of a small level) is supplied to a synchronizing circuit 75 and an RMS value detecting circuit 76. The synchronizing circuit 75 produces a synchronized detection signal which is synchronized with the distortion current. The detecting circuit 76 detects the RMS value of the distortion current and produces an RMS value detection signal. The synchronized detection signal and RMS value detection signals are supplied to a sine wave generator 77. On the basis of these detection signals received, sine wave generator 77 produces a sine wave signal as shown in Fig. 17B which is proportional to the RMS value of the distortion current and synchronized with the distortion current. The sine wave signal generated from generator 77 and the distortion current are supplied to a comparator 78 and the subtraction of (sine wave signal) - (distortion current) is executed. Thus, a subtracted signal as shown in Fig. 17C is the output from comparator 78. Fig. 18A shows an enlarged waveform for a period T of the subtracted signal shown in Fig. 17C. The subtracted signal is supplied to a comparator 79 and an absolute value producing circuit 80, respectively. Comparator 79 compares the subtracted signal with an earth potential and outputs a zero-cross signal as shown in Fig. 18B in which the polarity is inverted at the zero-cross points of the subtracted signal. The absolute value producing circuit 80 calculates the absolute value of the subtracted signal on the basis of the zero-cross signal and outputs an absolute value signal as shown in Fig. 18C. The absolute value signal is supplied to one of the input terminals of a comparator 81. A carrier triangular wave signal as shown in Fig. 19A which is output from a carrier triangular wave signal generator 82 is supplied to the other input terminal of comparator 81. The comparator 81 executes the subtraction of (absolute value signal) - (carrier triangular wave signal) and outputs a pulse width modulation signal as shown in Fig. 19B. The pulse width modulation signal and zero-cross signal are supplied to a pulse generator 83 and used to produce light triggering pulses LT₁ to LT₄ and light quenching pulses LQ₁ to LQ₄. Light triggering pulses LT₁ to LT₄ and light quenching pulses LQ₁ to LQ₄ are supplied to an inverter for DC-AC conversion (hereinafter, referred to as an inverter circuit) 84. The inverter circuit 84 has the same constitution as that of the inverter for the DC-AC conversion using LTQ SI thyristors S₁ to S₄ shown in Fig. 4. Namely, Fig. 20A shows an enlarged waveform of a part T₀ of the pulse width modulation signal shown in Fig. 19B. In Fig. 20A, the polarity of the zero-cross signal is inverted at time T₁ and it is assumed that the subtracted signal shown in Fig. 18A is at a positive level for the period before time T₁ and at a negative level for the period after time T₁. In this case, pulse generator 83 generates light triggering pulses LT₁ to LT₄ and light quenching pulses LQ₁ to LQ₄ such that LTQ SI thyristors S₁ to S₄ of the inverter circuit 84 execute the switching operations at the timings shown in Fig. 20B. In this case, the low level periods of the timing waveforms shown in Fig. 20B indicate the turn-off states of respective thyristors S₁ to S₄ and the high level periods represent the turn-on states. Fig. 20C shows the irradiation timings for light quenching pulse LQ₁ and light triggering pulse LT₂ which are irradiated to thyristors S₁ and S₂ so as to allow thyristors S₁ and S₂ to execute the switching operations at the timings shown at S₁ and S₂ in Fig. 20B. Fig. 20D shows the timings of supplying light triggering pulses LT₃ and LT₄ and light quenching pulses LQ₃ and LQ₄ to thyristors S₃ and S₄ so that thyristors S₃ and S₄ perform the switching operations at the timings shown at S₃ and S₄ in Fig. 20B. The relations among these timings can be described in a manner similar to the case shown in Fig. 6; therefore, their descriptions are omitted. By supplying light triggering pulses LT₁ to LT₄ and light quenching pulses LQ₁ to LQ₄ to LTQ SI thyristors S₁ to S₄ at the timings as mentioned above, a pulse signal having a duty ratio corresponding to the subtracted signal shown in Fig. 17C is the output from the inverter circuit 84 as shown in Fig. 20E. The mean value of this pulse signal becomes as shown in Fig. 20F and the subtracted signal shown in Fig. 17C can be obtained. Namely, the signal having substantially the same magnitude as that of the output of harmonics current source 73 and having the inverted polarity can be derived from the inverter circuit 84 using the LTQ SI thyristors. Thus, the harmonic current can be set off. In the case of handling a large electric power in each of the above-mentioned embodiments, as shown in Fig. 21, a plurality of LTQ SI thyristors are connected in series-parallel and the respective thyristors may be allowed to simultaneously execute the switching operations by the light triggering pulses and light quenching pulses. Therefore, as described in detail above, according to the invention, the optical pulse width modulation (OPWM) control is executed by the simple constitution at a high operating speed in a manner such that light triggering pulse LT and light quenching pulse LQ are generated at the timings corresponding to the pulse width modulation signal, thereby allowing the LTQ SI thyristor to execute the switching operation. Therefore, the power conversion can be completely performed due to only the light and the power conversion can be safely and effectively executed without considering the electrical insulation between the portion which handles a large electric power and the portion which performs the switching control as in the conventional apparatus.

Claims: A power converting apparatus in which power from a power source (36) is applied to input terminals of a circuit unit including light triggered and light quenched static induction (LTQSI) thyristors (S1 to S4), adapted to be turned ON upon receipt of a light-trigger-pulse and to be turned OFF upon receipt of a light-quench-pulse as switching elements which are selectively controlled by a control device to switch on and off to produce converted output power at output terminals (37, 38) connected to a load, wherein said circuit unit is formed by first to fourth LTQSI thyristors (S1 to S4) which are connected in an optically controlled bridge circuit, and each formed by an integral circuit structure in which a static induction photo-thyristor (29), which is turned on by irradiation of a light-trigger-pulse (LT), and a static induction photo-transistor constituted as a punching-through type bipolar photo-transistor (30), which is turned on by irradiation of a light-quench-pulse (LQ), are formed integrally on the same substrate (11), wherein the gate region of said static induction photo-thyristor (29) and the emitter region of said static induction photo-transistor constituted as a punching-through type bipolar transistor (30) are formed in a common semiconductor region (13), and a high resistivity epitaxial layer (16) of the static induction photo-thyristor (29) and the channel region (19) of said static induction photo-transistor constituted as a punching-through type bipolar transistor (30) are simultaneously formed on said common gate/emitter region (13) and that both the layers forming said high resistivity epitaxial layer (16) of the static induction photo-thyristor (29) and the channel region (19) of said static induction photo-transistor, constituted as a punching-through type bipolar transistor (30) are of the same conductivity type, and said control device supplies said light-trigger-pulses (LT) and said light-quench-pulses (LQ) to said LTQSI thyristors (S1 to S4) at timings corresponding to a pulse width modulation, wherein said light-trigger- and light-quench-pulses are alternately applied to said first LTQSI thyristors (S1) and said light-trigger- and light-quench-pulses are alternately applied to the second LTQSI thyristor (S2) in a reverse relation to that in the case of said first LTQSI thyristor, and said light-trigger- and light-quench-pulses are alternately applied to said third LTQSI thyristor (S3) and said light-trigger- and light-quench-pulses are alternately applied to said fourth LTQSI thyristor (S4) in a reverse relation to that in the case of said third LTQSI thyristor, thereby allowing predetermined electric power converting operations to be performed. The power converting apparatus according to claim 1, wherein said LTQSI thyristors (S1 to S4) of said bridge circuit and said control device operate as an inverter to perform DC-AC power inversion of a DC power supplied from said power source (36) to a single phase AC output applied to the load. The power converting apparatus according to claim 1, wherein said LTQSI thyristors (S1 to S4) of said bridge circuit and said control device operate as an inverter to perform DC-AC power inversion of a DC power supplied from said power source (36) to a polyphase AC output applied to the load. The power converting apparatus according to claim 1, wherein said LTQSI thyristors (S1 to S4) of said bridge circuit and said control device operate as an inverter to perform AC-to-DC-to-AC conversion to convert a polyphase AC power from said power source (36) to a DC form and convert the DC form to a polyphase AC output applied to the load. The power converting apparatus according to claim 1, wherein said LTQSI thyristors (S1 to S4) of said bridge circuit and said control device operate to perform AC-DC power conversion to convert a single-phase AC input from said power source (36) to a DC output applied to said load. The power converting apparatus according to claim 1, wherein said LTQSI thyristors (S1 to S4) of said bridge circuit and said control device operate as an inverter to perform AC-DC conversion to convert a polyphase AC input from said power source (36) to a DC output applied to said load.

Inventors: MITAMURA KOICHI, MITSUI KIYOO, MIURA KIMIO, NISHIZAWA JUNICHI, TAMAMUSHI TAKASHIGE, MITAMURA, KOICHI, MITSUI, KIYOO, MIURA, KIMIO, NISHIZAWA, JUNICHI, TAMAMUSHI, TAKASHIGE
Applicants: TOHOKU ELECTRIC POWER CO, ZAIDAN HOJIN HANDOTAI KENKYU, THE TOHOKU ELECTRIC POWER CO., INC., ZAIDAN HOJIN HANDOTAI KENKYU SINKOKAI
Application year: 1986
Main classification: H02M7
IPC codes: H02M7, H02M1