NEGATIVE-WORKING, NON-SWELLING RESIST

Abstract: There are disclosed negative-working resist composi­ tions featuring a binder and a radiation-sensitive compound that loses HX upon exposure, to become less soluble in an aqueous base. X is selected from the group consisting of -CN, halide, and -SO₂R¹, and R¹ is allkyl of 1-5 carbon atoms or aryl of from 6 to 10 carbon ring atoms.

Description: NEGATIVE-ORKING, NON-SWELLING RESIST This invention relates to photographically negative-working compositions suitable for exposure to activating radiation such as UV light to form a resist image. One of the frontiers of photoresists involves the need for greater resolution, that is, for the resolution of smaller and smaller line widths. The reason is that semiconductor devices using such resists are packing more and more devices onto the same area. This is done primarily by reducing the dimensions of the devices-hence the need for smaller line widths. The reduction in line widths has proceeded down to 1 vm or less, both in the line width and in the spacing. One result of this phenomenon has been the gradual abandoning by the industry of negativeworking light-sensitive resists, that is, those having decreased solubility upon exposure to light, in favor of positive-working resists. Unlike the case with positive-working resists, the negative-working lightsensitive resists have a great tendency to swell upon development. Swelling is not a significant problem for line widths and spacings greater than 2 wm. But at 1 vm spacing or less, swelling of most negativeworking resists has been enough to bridge the lvm spacing, resulting in stringers and other unacceptable defects noticeable upon drying. What then has been needed prior to this invention is a negative-working light-sensitive resist that has no observable swelling, during development, when the image has 1 Bm widths and spaces. The fact that positive-working resists will do this is not completely adequate-the availability of a negativeworking light-sensitive resist would greatly expand the possible chemistries and more closely fit the processing format of some circuit designers. Compounds have been known prior to this invention for use in resists to generate color upon exposure, as a print-out indication of exposure dosage and uniformity. Some of these, for instance nitrilesubstituted aminotriphenyl methane dyes, have been found to lose a -CN moiety upon exposure, as explained in Dosimetry for Lithographic Applications", J. Vac. Sci, Technol., Vol. 19, No. 4, Nov/Dec 1981, p. 1343-1347. Other print-out indicators have been found to lose a 502 moiety as described in U.S. Patent 4,373,017 issued February 8, 1983 to Masukawa et al. However, such compounds have not been identified, prior to this invention, as providing differential solubility. Thus, they have not been recognized as the basis for providing sensitivity to the resist, and most importantly, have not been appreciated as the basis for a negative-working resist free from swelling. Therefore, when used in resists to produce 1 vm line widths or spacing, the prejudice in the trade against negative-working resists has limited such compounds to use in positive-working resists. I have discovered a negative-working resist that avoids the problem of swelling noted above, by a mechanism that is not entirely clear. Thus it is an advantageous feature of the invention that a negative-working resist is provided that produces no observable swelling when developed to form line widths and spacings of 1 Bm or less. It is another advantageous feature of the invention that such a resist is sensitive to deep UV exposures. Yet another advantageous feature of the invention is that the same radiation-sensitive compound providing differential solubility also can provide print-out color for the resist. These features result, more specifically, from a negative-working light-sensitive resist comprising a binder and a sensitizer comprising a radiation-sensitive compound that, upon exposure to activating radiation, loses the moiety HX and is converted to a colored compound that is less soluble in an aqueous base than is the compound prior to the exposure. "X" in this formula is selected from the group consisting of -CN, halide and -S02R1; and 1 from to R1 is alkyl comprising from 1 to 5 carbon atoms or aryl comprising from 6 to 10 carbon ring atoms. The sensitizer functions to impart differential solubility to the resist as a result of imagewise-exposure to activating radiation, thereby rendering the resist developable in an aqueous base. In accord with another aspect of the invention, there is also provided a method of producing a negative-working image in a resist composition. The method comprises the steps of a) imagewise-exposing to activating radiation the aforesaid composition, and b) developing the exposed composition with an aqueous base so that only the exposed areas remain. Certain compounds have been found to unexpectedly produce nonPswelling negative-working resists when exposed to activating radiation. Although these compounds will be discussed primarily in connection with their preferred exposure sources, namely deep UV light sources defined as those having wavelengths including the range of 200-300 nm, they are also useful with other activating radiation. The ability of these compounds to provide differential solubility to a selected solvent is well understood-it arises from the loss of an HX moiety upon exposure, causing the compound to transform into a form which is more insoluble in developer, wherein X is selected from the group consisting of -CN; halide such as chloride, fluoride, and the like; and -SO2R1; and R1 is alkyl of from 1 to 5 carbon atoms, such as methyl, ethyl, propyl, isopropyl and the like; or aryl of from 6 to 10 carbon ring atoms, such as phenyl and naphthyl. What is not well understood is why this reaction and the compounds that provide it should be free of the swelling that plagues other negative-working resists. In the process of forming the less soluble species, the resist of this invention reacts more at the surface, so that upon development the resist is undercut somewhat. This lends itself to using the resist in conventional lift-off techniques, since undercut resists are not likely to remain connected to adjacent components. Particularly useful compounds for this resist comprise those having the structural formula EMI4.1 which is colorless, wherein R2 5 and X2 are individually selected from the group noted above for X. That is, X1 is a species of the class of X moieties noted. When exposed, these compounds lose HX1 to form EMI5.1 a colored species. In compounds 1 and 2 above, R3 is alkyl of from 1 to 5 carbon atoms, such as methyl, ethyl, propyl, isopropyl and the like; or together the two R3 moieties form with the N atom, one or two fused heterocyclic rings of 5 or 6 ring atoms each, for example, morpholino or julolidino; n is 1 or 2; and Z is any substituent, or hydrogen, which upon exposure does not interfere with the negative-working properties of the resist. That is, Z is selected so as to produce no significant increase in solubility in aqueous bases such as are useful as developers. For example, Z can be H, alkyl of from 1 to 5 carbon atoms, such as methyl, ethyl, propyl, isopropyl and the like; benzo; or alkoxy of from 1 to 5 carbon atoms, such as methoxy, ethoxy, propoxy, and the like. Particularly preferred examples from this class of compounds include: 4-(&alpha;,&alpha;-dicyano-4-dimethylaminobenzyl)-l-dicyano- methylbenzene; 4 - ( a, a -dicyano-4-aminobenzyl)-l-dicyanomethyl- benzene, 4-(a,a-dicyano-4-methylaminobenzyl)-l-di benzene; 4 - ( a, a -4-diethylaminobenzyl)-1-dicyanomethyl- benzene; 4-(&alpha;-&alpha;-4-dibutyaminobenzyl)-1-dicyanomethylbenzene; 4-(a,a-2, 3-dibenzyl-4-dimethylaminobenzyl)-l- dicyanomethylbenzene; 4-(a,a-dicyano-4-aminobenzyl)-l-dicyanomethyl- benzene; 4-(a,a-dicyano-4-amino-2,6-dimethylbenzyl-1- dicyanomethylbenzene; 4-(a,a-dicyano-4-benzylaminobenzyl)-l-dicyanomethylbenzene; 4-(a,a-dicyano-4-morpholinobenzyl)-l-dicyanomethylbenzene; and 4-(a,a-dicyano-a-(9-julolidyl)]-1-dicyanomethyl- benzene. Another useful class of colorless compounds includes those having the structural formula EMI6.1 wherein X1, R3, Z and n have the meaning noted above. Upon exposure, such compounds also lose HX1 and form EMI6.2 also a colored species. Although this class tends to show more thickness loss upon development, an undesirable feature, it is considered that other, more selective aqueous base developers can be used with this class to keep such thickness losses within acceptable ranges. Examples include those developers that include tetraalkylammonium or phosphonium cations, such as are described in U.S. Patent No. 4,423,138, issued on December 17, 1983. Although it is not essential, it is preferred that the compounds of this invention that lose the moiety HX to provide differential solubility, be the sole radiation-sensitive compounds of the composition, to insure the lack of swelling upon development. The compounds of this invention preferably are present in an amount greater than 101 by weight, most preferably greater than 15% by weight, of the dried coating composition. Synthesis of the compounds of class 1 or 3 proceeds generally as follows: For class 1, EMI7.1 More particularly, 4-(a,a- dicyano-4dimethylaminobenzyl)-ldicyanomethylbenzene has been synthesized as follows (Prep. No. 1): 1 g of tetracyanoquinodimethane and 0.6 g N,N-dimethylaniline were refluxed in 30 ml of ethanol for 1 hour. The dark green solution was filtered hot and allowed to cool. The resulting crystals were collected, washed with additional ethanol and air dried to yield 1.3 g light yellow plates M.P. l45-70C. Calculated: C, 73.8; H, 4.6; N, 21.5. Found: C, 73.3; H, 4.8; N, 21.3. Table I lists other representative compounds of the invention that have been prepared similarly. EMI9.1 Analysis cald@d./Found Prep. No. R1 R2 Z % Yield M.P. C C H N 2 H H H 55 140-1 72.7/71.1 3.7/3.9 23.6/23.1 3 H CH3 H 50 110-112 73.3/73.1 4.2/4.4 22.5/22.6 4 CH3 CH3 H 82 145-7 73.8/73.3 4.6/4.8 21.5/21.3 5 Ethyl Ethyl H 35 95-6 74.8/74.1 5.4/5.3 19.8/19.9 6 Butyl Butyl H 40 97-8 76.3/75.9 6.6/6.6 17.1/17.3 7 CH3 CH3 2.3-di- 50 82-95 76.8/77.0 4.6/5.2 18.7/17.3 benzo 8 H H 2-OCH 37 108-9 69.7/69.1 4.0/4.3 21.4/20.9 9 H H 2,6-di- 63 192-4 73.8/73.8 4.6/5.1 21.5/21.7 methyl 10 H Benzyl H 32 137-8 77.5/77.4 4.4/4.3 18.1/18.1 11 Morpholinoa H 67 175-6 71.9/71.4 4.7/4.6 19.1/18.9 12 Julolidinob H 43 147-8 76.4/76.2 5.1/5.1 18.6/18.5 EMI9.2 a. b. Complete stoucture of julolidine derivative. A similar synthesis is used to prepare compounds of class 3 above, except that dimethylformamide is used as the solvent in place of ethanol for Prep. Nos. 7, 8 and 9. Any binder is useful in this composition, such as conventional non-radiation sensitive binders. Particularly useful examples include the well-known novolak resins, that is, those having the structural formula: EMI10.1 Other aromatic, bzse soluble binders having good plasma etch resistance and thermal resistance to at least 1500C are also particularly useful. Other addenda can be optionally added to the composition, for example, stabilizers, surfactants, and the like. Examples The following examples further illustrate the scope of the invention. Example 1 - Use of class 1 compound The following composition was spin-coated at 4000 rpm on chrome-clad glass plates: Component Amount Cresol-Formaldehyde resin binder 1.0 g 4-(a,a-dicyano-4-dimethyl- aminobenzyl)-l-dicyanomethylbenzene 0.2 g FC170C non-ionic fluorocarbon Surfactant obtained from 3M 5.9 mg 2-Ethoxyethyl acetate 3.6 g The dried coated plates were prebaked at 900C for 30 minutes, then contact exposed through a quartz mask with an Optical Associates Instrument exposure device using a deep UV source and 220 nm mirrors for 30 s . Upon exposure to an image of lines having widths and spacing of 1 vm or less, a bright blue image printed out. The exposed plates were developed in 1% aqueous sodium hydroxide for 15 s at room temperature or in 1:3 tetramethylammonium hydroxide/water for 30 s at room temperature. Crisp negative images were formed as unexposed areas were washed away rapidly. Image resolution was =0.5 vm. There was less than 1% thickness loss in the exposed areas, and no swelling had occurred on development. Example 2 - Use with a Different Binder A composition was prepared similar to that of Example 1 except that the novolak binder was replaced by 1.0 g of poly(4-hydroxystyrene). The composition was spin-coated at 4000 rpm on chrome-clad plates. As in Example 1 a dried plate sample was prebaked, exposed, and processed in aqueous base. As in Example 1 a blue printout image was observed upon exposure and image resolution was =0.5 Bm with less than 11 thickness loss observable in the exposed areas after processing. No swelling had occurred on development. Example 3 - Use of Class 3 Compound A composition was prepared similar to that of Example 2, except that the radiation-sensitive compound was 0.6 g of EMI12.1 prepared with 6.4 g of cyclohexanone as the solvent. Exposure was For 40 s , and development was for 10 s in a solution containing 3 parts water and 1 part silicate-phosphate developer containing 1.45 parts by weight Na3PO4.12H20 and 1 part by weight Na2SiO3'9H2O.

Claims: CLAIMS: 1. A lightwsensitive negative-working resist comprising a binder and a sensitizer which functions to impart differential solubility to said resist as a result of imagewise-exposure to activating radiation, thereby rendering said resist developable in an aqueous base, characterized in that said sensitizer comprises a radiation-sensitive compound that, upon exposure to said activating radiation, loses a moiety HX and is converted' to a colored compound that is less soluble in an aqueous base than is said compound prior to said exposure, wherein X is selected from the group consisting of -CN, halide and -SO2R1 and R1 is alkyl comprising from 1 to 5 carbon atoms or aryl comprising from 6 to 10 carbon ring atoms. 2. A resist as defined in claim 1, wherein said radiation-sensitive compound is the sole radiation sensitive compound of said resist. 3. A resist as described in claim 1 or 2, wherein said compound has the structural formula EMI13.1 wherein R2 and X1 are individually selected from the group recited for said X, R3 is alkyl of from 1 to 5 carbon atoms or together the two R2 moieties form with said N atom, one or two fused heterocyclic rings of 5 to 6 ring atoms each; n is 1 or 2 and Z is any substituent, or hydrogen, which on exposure to said radiation produces no increase in aqueous-base solubility. 4. A resist as described in claim 1 or 2, wherein said compound has the structural formula EMI14.1 wherein XL is selected from the group recited for said X, R2 is alkyl of from 1 to 5 carbon atoms or together the two R3 moieties form with said N atom, one or two fused heterocyclic rings of 5 to 6 ring atoms each, n is 1 or 2 and Z is any substituent, or hydrogen, which on exposure to said radiation produces no increase in aqueous-base solubility. 5. A method of producing a negative-working image in a light-sensitive resist, comprising the steps of a) imagewise-exposing to activating radiation the resist defined in claim 1, 2, 3 or 4, and, b) developing said exposed resist with an aqueous base so that only the exposed areas remain.

Inventors: LINDSTROM, MICHAEL JEFFREY
Applicants: EASTMAN KODAK COMPANY
Application year: 1986
Main classification: G03F7
IPC codes: G03F7