Silicone resist materials containing polysiloxanes

Abstract: The polysilanes and polysiloxanes of the present invention are polymers that contain silicon in the principal chain, and contain the side chains alkaline soluble groups such as phenol-based hydroxy group and carboxyl group. One silicone resist material of the present invention comprises the polysilane or the polysiloxane in the above. Another silicone resist material of the present invention contains the above polysilane or polysiloxane, and an appropriate photosensitive agent. Still another silicone resist material of the present invention does not contain the above photosensitive agent, and in its stead, it contains a group that possesses photosensitive to ultraviolet rays or the like, via a siloxane bonding in the principal chain. As a substance with such photosensitivity, one may mention, for example, o-nitrobenzylsilyl groups that presents alkaline solubility when it is irradiated by ultraviolet rays. Accordingly, the silicone resist materials of the present invention, especially the second and third silicone resist materials, are alkaline developable, and also possess a superior resistance to oxygen plasma. Therefore, they can be used as a top layer film in the two-layered resist system, making it possible to form very fine resist patterns, fast and with a minimum number of processing steps. Methods of manufacturing the polysilanes and polysiloxanes as well as of the resist materials are also disclosed.

Description: BACKGROUND OF THE INVENTION Field of the Invention The present invention relates to polysiloxanes, and silicone resist materials that contain these compounds, and more particularly to silicone resist materials that make it possible to form fine resist patterns that are used in the manufacture of integrated circuits for semiconductor elements. Description of the Prior Art In the manufacture of electronic parts for semiconductor elements, integrated circuits, and so on, fine processing techniques by means of photolithography has been used widely heretofore. The photolithographic techniques comprise a resist process and a etching process. In the resist process a desired resist pattern is formed by spreading an appropriate resist material over a single crystal silicon wafer or the like, and then irradiating it with ultraviolet rays or the like using a masking plate with desired pattern on the resist material, or irradiating it directly with electron beam using electron beam lithography system. In the etching process the film of SiO₂, Al or the like which is the foundation film is processed by the use of the resist pattern thus obtained. In the fine processing techniques, accuracy of the products is dominated substantially by the performances of the photoresist which is being used, for example, by its resolving power on the substrate, its accuracy of the photosensitivity, its adhesivity to the substrate, and others. For this reason, various kinds of exposure technique, resist material, and so forth have been proposed in order to form resist patterns with excellent properties. In recent years, however, the processing techniques are being used in a multitude of modes so that resist materials that can be easily and quickly processed are being desired on the one hand. On the other hand, photosensitive composites have been known as resist materials that are capable of forming high precision resist patterns. However, along with the diversification of functions and advancement of the electronic instruments, there has been an increased demand for a further miniaturization of patterns in order to realize an increase in the density and the degree of integration of the devices. Now, in the existing monolayered resist method in which a single resist layer is formed over a wafer or the like, there exist various kinds of problems that become obstructions to the miniaturization of the resist patterns. Namely, the degree of reduction in the dimension of the integrated circuits in the longitudinal direction has not been as large as that in the lateral dimension, so that the ratio of the height to the width of the resist patterns has necessarily been large. Consequently, the control of the changes in the dimensions of a resist pattern on a wafer that has a complex step structure has become increasingly difficult with the progress in the miniaturization of the patterns. Further, in various kinds of exposure systems, there are generated problems accompanying the reduction in the minimum dimensions. Thus, for instance, in the case of exposure with light, interference of the reflected light due to the level difference in the substrate is becoming to affect strongly the accuracy in the dimensions. Moreover, in the case of exposure with electron beams, it is becoming impossible to increase the ratio of the height to the width of the fine resist patterns, due to the proximity effect that is generated by the backscattering effect of electrons. Now, it was discovered that these various kinds of problems can be resolved by adopting the multilayered resist system. The multi-layered resist system is described, for instance, in Solid State Technology, 74 (1981), but there are also published numerous studies on the system elsewhere. In the multi-layered resist system, the most widely in general use currently is the resist system with three layer structure. This system consists of a bottom layer that serves to smooth out the steps in the substrate and to prevent the reflection from the substrate, an intermediate layer that functions as a mask in etching the bottom layer, and a top layer that serves as a photosensitive layer. Although the three-layered resist system possesses an advantage over the monolayered resist method in that it enables fine patterning, the system has a drawback in that the number of processes required up to the pattern formation has to be increased. US-A-3 410 820 discloses a method of curing organosilicon polymers containing hydroxyphenyl groups by means of an oxidative coupling reaction which is catalyzed by a basic copper salt-pyridine complex and to the compositions produced thereby; these compositions are useful as encapsulating agents, caulking compositions and the like. JP-A-60-80844 discloses a pattern-forming material including siloxane polymers; in these polymers the functional group attached to the main chain as the side chain comprises Cl, Br, or J or a group presented by the formula -CH₂-Y, wherein Y is Cl, Br, or J, but not a phenol group. Therefore the pattern-forming material according to this reference does not permit an alkaline development. Not prepublished EP-A-0 204 963 (claiming earlier priorities) discloses an alkali-soluble siloxane polymer, an alkali-soluble silmethylene polymer, and an alkali-soluble polyorganosilsesquioxane polymer; these polymers are useful as a photoresist for the fabrication of semiconductor devices, and they are suitable for dry etching because of their superior resistance to oxygen plasmas. SUMMARY OF THE INVENTION The general object of the present invention is to provide a variety of silicone resist materials that are adapted to the various modes of their use. A first concrete object of the present invention is to provide silicone resist materials that can be processed easily and quickly. A second concrete object of the present invention is to provide photosensitive silicone resist materials which make it possible to form precision resist patterns with a minimum number of processes, without the use of the three-layered resist system. A third concrete object of the present invention is to provide silicone resist materials which contain silicon and yet permit alkaline development. Subject matter of the present invention is the use of a polysiloxane resist material according to claim 1, comprising a polysiloxane consisting of repeating units of formula (II) wherein a substituent group R₁₀ represents an alkyl group, vinyl group, allyl group, aryl group or substituted aryl group, or siloxy group or substituted siloxy group, and at least one of substituent groups R₁₁ to R₁₅ is a hydroxyl group and the remaining groups other than the hydroxyl groups among the substituent groups R₁₁ to R₁₅ may be identical or may be different, and each of them represents a hydrogen atom, a halogen atom, an alkyl group or a substituted alkyl group, a carboxyl group, an alkylcarbonyl group, an alkoxycarbonyl group, an alkoxy group, an acyloxy group, an allyl group, an aryl group, or a substituted aryl group, for the production of resist patterns, wherein after irradiation of said resist material the exposed portion thereof is removed by an alkaline aqueous solution. Preferred embodiments thereof are subject matter of claims 2 to 10. Subject matter of the present invention is also the use of polysiloxane resist material according to claim 11, comprising a photosensitive agent and a polysiloxane of formula (III) wherein a substituent group R₁₆ is an alkyl group with 1 to 10 carbon atoms or a substituted or nonsubstituted aryl group with 6 to 14 carbon atoms, at least one of substituent groups R₁₇ to R₂₁ is a group containing a carboxyl group or a phenolic hydroxyl group, and the groups other than the group containing the carboxyl group or the phenolic hydroxyl group among the substituent group R₁₇ to R₂₁ are hydrogen atom, halogen atom, alkyl group, halgeno-alkyl group, cyanoalkyl group, carboxyl group, alkylcarbonyl group, alkoxycarbonyl group, alkoxy group, alkoxyalkyl group, acyloxy group, allyl group, or substituted or nonsubstituted aryl group with 6 to 14 carbon atoms, substituent groups R₂₂ and R₂₃ are the vinyl group, the allyl group, an alkyl group with 1 to 10 carbon atoms, aryl group or substituted aryl group, or siloxy group or substituted siloxy group, and u and w are positive integers and v is zero or a positive integer, for the production of resist patterns, wherein after irradiation of said resist material the exposed portion thereof is removed by an alkaline aqueous solution. Preferred embodiments thereof are subject matter of claims 12 to 18. A still further subject matter of the present invention is a polysiloxane resist material according to claim 19, comprising a polysiloxane consisting of repeating units of formula and a photosensitive agent, and wherein the compounding ratio of said polysiloxane and photosensitive agent is 5 to 100 parts by weight of the photosensitive agent to 100 parts by weight of the polysiloxane. A still further subject matter is a polysiloxane resist material according to claim 20, comprising a photo-sensitive agent and a polysiloxane of formula (III) wherein groups R₁₆, R₂₂ and R₂₃ are phenyl groups, R₁₇ and R₁₈ are mutually different, each being a hydrogen atom and 3-methyloxy-4-hydroxyphenyl group, and R₁₉, R₂₀ and R₂₁ are hydrogen atoms for two of them and the remaining one is a methyl group, and wherein the compounding ratio of said polysiloxane and photosensitive agent is 5 to 100 parts by weight of the photosensitive agent to 100 parts by weight of the polysiloxane, and u and w are positive integers and v is zero or a positive integer; preferred embodiments thereof are subject matter of claims 21 to 24. Yet further there are shown the methods of manufacturing the silicone resist materials described in the foregoing. These and other objects, features and advantages of the present invention will be more apparent from the following description of the preferred embodiments. DETAILED DESCRIPTION OF THE INVENTION The polysiloxanes, and silicone resist materials of the present invention may be used for various purposes. Silicone resist materials that consist of the polysiloxane and an appropriate photosensitive agent can be used widely for general photoengraving and the like. Moreover, silicone resist materials that consist of the polysiloxanes can be used as the resist materials for easily and quickly forming desired patterns for semiconductor wafers or the like. Still further, silicone resist materials that consists of the polysiloxane and an appropriate photosensitive agent may be used as the resist materials for forming desired patterns with high precision in a minimum number of processes. Now, the case in which the present invention is most effective is the case of forming patterns with high precision for the wafers or the like. Accordingly, the present invention will be described in terms of expressions that are suitable for that purpose. It should be reminded, however, that it does not at all limit the scope of the present invention. Silicone Resist Materials for Forming High Precision Patterns (1) A first class of the silicone resist materials that are used for the purpose of forming high precision patterns contain a polysiloxane resin that has a structural unit as shown by formula (II) as described above. and optionally an appropriate photosensitive agent. This silicone resist material can also be used as the top layer film of two-layered resist system. Accordingly, the polysiloxane resin that is contained in the silicone resist material must also permit development in alkaline solution and have an excellent resistance to oxygen RIE. From this viewpoint, the polysiloxane resin of the present invention contains the hydroxyl group (-OH) among R₁₁ to R₁₅ of formula (II), so that it is alkaline soluble. Further, the polysiloxane contains the siloxane bond in the principal chain of formula (II), so that it has an excellent resistance to oxygen gas plasma. Namely, under the irradiation of oxygen RIE, the polysiloxane quickly forms silicon dioxide (SiO₂) which is deposited on the resist film of the bottom layer, preventing its dispersion. To describe the resistance to oxygen RIE of the polysiloxane in more detail, consideration is made of the generally known resist materials that contain silicon as shown by formula These resist materials also form silicon dioxide when they are exposed to oxygen gas plasma, so that they possess resistance to oxygen RIE. However, these resist materials contain silicon in the side chain, so that their resistance to oxygen RIE is somewhat weaker. In forming a three-dimensional network structure of silicon dioxide from substances that are represented by formula (VI) or (VII), a chain (-SiO-SiO-) is formed first by separating silicon atoms from the principal chain, and then, there has to be supplied oxygen atoms from the oxygen gas plasma. This increases the number of steps for the formation. Consequently, formation of silicon dioxide becomes less easy and only weak resistance to RIE will be obtained. In contrast to this, in the polysiloxanes that have the structure as represented by formula (II), it is easy to form a three-dimensional network structure by receiving oxygen atoms from the irradiated oxygen gas plasma since the chain (-SiO-SiO-) is contained in it to begin with. Accordingly, the silicone resist materials of the present invention possess an excellent resistance to oxygen RIE in comparison to other silicone resist materials. Furthermore, these polysiloxanes possess the (-SiO-SiO-) structure from the beginning, so that they present more satisfactory resistance to oxygen RIE than the first class of silicone resist materials that possess the polysilane structure. Now, in formula (II), the groups R₁₀ to R₁₅ other than the hydroxyl group (-OH) may be anything as long as they do not spoil the alkaline solubility and resistance to oxygen RIE. However, as R₁₀ , one may mention alkyl group, vinyl group, allyl group, aryl group or substituted aryl group, or siloxy group or substituted siloxy group with 1 to 10 carbon atoms. Further, R₁₁ to R₁₅ may be identical or may be different, and one may mention for each, hydrogen atom, halogen atom, alkyl group, substituted alkyl groups such as halogenoalkyl group, cyanoalkyl group, and alkoxyalkyl group, carboxyl group, alkylcarbonyl group, alkoxycarbonyl group, alkoxy group, acyloxy group, allyl group, aryl group or substituted aryl group. In addition, the alkyl group with 1 to 10 carbon atoms in formula (II) means, for example, methyl group, ethyl group, n-propyl group, isopropyl group, n-butyl group, sec-butyl group, t-butyl group, n-pentyl group, n-hexyl group, n-octyl group, n-nonyl group, or n-decanyl group. Further, the substituted aryl group means, for instance, phenyl group, o-hydroxyphenyl group, p-hydroxyphenyl group, o-methylphenyl group, p-methylphenyl group, β -naphthyl group, or p-chlorophenyl group. Moreover, when R₁₀, R₂₂ and R₂₃ in formulae (II) and (III), respectively, are siloxy or substituted siloxy group, they may be a two-dimensional or a three-dimensional structure, as will be shown below which is obtained by the bonding of these groups with the adjacent siloxy group or the substituted siloxy group, or with the siloxy group or the substituted siloxy group in other molecules. Furthermore, as concrete examples of the structural unit shown in formula (II), there may be mentioned those as shown below. Here, the compounds shown by formula (II) can be manufactured in the following manner. Namely, by applying the manufacturing method described in Journal of American Chemical Society, 69 , 1537 (1947), p-hydroxyphenyl lithium and tetrachlorosilane or mono-substituted trichlorosilane are brought to reaction first, to obtain a dichlorosilane compound by the reaction with trimethyl-chlorosilane, then the product is hydrolyzed. Next, the photosensitive compound to be used for the present invention may be anything as long as it is generally known as a photosensitive agent. Thus, for instance, one may mention an azido compound, naphtho-quinonediazidosulfonic acid ester, and diazonium salts. As the concrete examples of the azido compounds, there may be mentioned 4,4'-diazidochalcone, 2,6-bis (4'-azidobenzal) cyclohexanone, 2,6-bis (4'-azidobenzal)-4-methylene-cyclohexanone, 1,3-bis (4'-azidobenzal)-2-propanone, 1,3-bis (4'-azidocynnamyliden)-2-propanone, 4,4'-diazidostilbene, 4,4'-diazidobiphenyl, 4,4'-diazido-diphenylsulfide, 3,3'-diazidodiphenylsulfide, 4,4'-diazidodiphenylsulfone, and 3,3'-diazidodiphenylsulfone. In addition, one may also mention the compounds disclosed in Japanese Patents No. 50-70105, No. 50-40626, No. 49-8214, No. 48-94420, and No. 48-94419. Further, there may also be mentioned compounds that include naphthoquinonediazido group or benzoquinonediazido group. These compounds can be obtained, for example, by condensation, in the presence of weak alkali, of low molecular or high molecular compound that contains hydroxy group, and naphthoquinonediazidosulfonic chloride or benzoquinonediazidosulfonic chloride. Here, as the low molecular compounds, one may mention hydroquinone, resolcin, phloroglucin, 2,4-dihydroxy-benzophenone, 2,3,4-trihydroxybenzophenone, gallic acid alkyl ester, catechin, quercetine, quinalizarin, purprin, and others. As examples of high molecular compounds, there may be mentioned phenol-formaldehyde-novolak resin, cresol-formaldehydenovolak resin, polyhydroxystyrene, and others. Among these compounds, preferable are the azido compounds. More preferred are naphthoquinonediazidosulfonic acid esters or arylazido compounds. These may be used separately or as a mixed system. In the photosensitive composites of the present invention, the compounding ratio of the photosensitive compound and the polysiloxane resin that are the indispensable components is not limited in any particular manner. However, it is ordinarily set at 5 to 100 parts by weight of photosensitive compound to 100 parts by weight of the polysiloxane resin. If it is less then 5 parts by weight, sufficient difference between the alkaline solubilities for the unexposed and exposed portions cannot be obtained, and sharp patterns cannot be obtained. On the contrary, if it exceeds 100 parts by weight, it cannot be spread in the form of a film. Further, alkaline soluble resin that may be contained, depending upon the need, in the photosensitive composite of the present invention, has no special limitation so long as it is an alkali soluble resin. However, there may be mentioned, for example, poly-p-vinylphenol, poly-o-vinylphenol, poly-m-isopropenylphenol, poly-p-isopropenylphenol, m,p-cresol novolak resin, copolymer of p-vinylphenol and methyl metacrylate, copolymer of p-isopropenylphenol and anhydrous maleic acid, partial benzoyl compound of poly-p-vinylphenol, partial o-methylate of poly-p-vinylphenol, polymetacrylic acid, and polyacrylic acid. Among them, the most preferred are those that have hydroxyl group of phenol type. Further, the combining amount of the alkaline soluble resin is about 5 to 100 parts by weight for 100 parts by weight of the polysiloxane resin. The photosensitive composites of the present invention can easily be obtained by the ordinary method, for instance, of dissolving each part in the solvent. In addition, to the composites of the present invention, there may be combined, as need arises, an intensifier dyes, surface active agent, other polymer for reforming the spread film, such as epoxy resin or polymethylmetacrylate resin, propyleneoxide-ethylene oxide copolymer, polystyrene, silicone ladder polymer, and so forth. The pattern formation by the use of the composites of the present invention will be described in the following. First, a composite of the present invention is spread after dissolving it in a solvent. Such a solvent has no special limitations, so that one may mention, for example, toluene, xylene, o-dichlorobenzene, chloroform, ethanol, isopropyl alcohol, cyclopentanone, cyclohexanone, cellosolve acetate, and methylethyl ketone. Further, although spreading may be carried out according to the existing method, it is preferred to be done by the spin coating method. After spreading the resin, it is given a drying. The drying conditions are, for the case of resin for the bottom layer, temperature ordinarily of 50 to 250°C, preferably 80 to 220°C, and duration ordinarily of 0.5 to 120 minutes, preferably 1 to 90 minutes. For the case of photosensitive silicone resin for the top layer, they are ordinarily 50 to 200°C, preferably 80 to 120°C, and ordinarily 0.5 to 120 minutes, preferably 1 to 60 minutes. Next, the photosensitive composite layer of the present invention is irradiated through a mask with predetermined pattern. Exposure is carried out according to the conventional method by the irradiation of energetic beams such as visible, infrared, or ultravialet rays or electron beams. Following that, development is carried out by the use of a solvent. Developing is done ordinarily for 0.5 to 10 minutes by the use of an appropriate solvent such as aqueous solution of alkali, acetone, or others. Next, it is dried ordinarily for 0.5 to 120 minutes at 50 to 200°C. A predetermined resist pattern is obtained by carrying out etching for the bottom layer by the use of an appropriate solvent or oxygen plasma. Preferable is the etching by the use of oxygen gas plasma. In this case, treatment is given ordinarily at a pressure of 1 x 10⁻⁴ to 1 x 10⁻¹ Torr for a duration of 1 to 120 minutes, with an energy density of 0.01 to 10 W/cm². Silicone Resist Materials for Forming High Precision Patterns (2) A second class among the silicone resist materials that are used for the purpose of forming high precision patterns contain an appropriate photosensitive agent and a polysiloxane resin that has the structural unit as shown by formula (III) as described above. The second silicone resist material can also be used as the top layer film of the two-layered resist system. Accordingly, the polysiloxane has to be developable in alkali and has to have a satisfactory resistance to oxygen RIE. The polysiloxane contains at least one carboxyl group or phenol-based hydroxyl group among R₁₇ to R₂₁, so that it is soluble to alkalis. In addition, it contains the siloxane bond in the principal chain, so that it has a satisfactory resistance to oxygen RIE. Consequently, these polysiloxanes possess superior resistance to oxygen RIE compared with the substances that can be represented by formula (VI) or (VII). Now, groups R₁₆ to R₂₁ in formula (III) of polysiloxane that are other than the group containing carboxyl group and the hydroxyl group of phenol type may be anything, as long as they do not spoil the alkaline developability and the resistance to oxygen RIE. As the substituent group R₁₆, one may mention alkyl radical with 1 to 10 carbon atoms or substituted or nonsubstituted aryl group with 6 to 19 carbon atoms. As the substituent groups R₁₇ to R₂₁ that are other than the group containing the carboxyl group or hydroxyl group of phenol type, one may mention hydrogen atom, halogen atom, alkyl group, halogenoalkyl group, cyanoalkyl group, carboxyl group, alkylcarbonyl group, alkoxycarbonyl group, alkoxy group, alkoxyalkyl group, acyloxy group, allyl group, or substituted or nonsubstituted aryl group with 6 to 14 carbon atoms. Further, as the alkyl group with 1 to 10 carbon atoms, one may mention, for instance, methyl group, ethyl group, n-propyl group, iso-propyl group, n-butyl group, sec-butyl group, t-butyl group, n-pentyl group, n-hexyl group, n-octyl group, n-nonyl group, and n-decanyl group. As the substituted aryl group one may mention, for example, phenyl group, o-hydroxyphenyl group, p-hydroxyphenyl group, o-methylphenyl group, p-methylphenyl group, β -naphthyl and p-chlorophenyl group. Moreover, as concrete examples of the structural unit as represented by (...) u in formula (III), one may mention the following. In these silicone resist materials, resist patterns are formed by the photosensitive agents that are contained in them. Accordingly, the polysiloxane that is mixed with the photosensitive agent is sufficient even if it is simply alkaline soluble. However, if the alkaline solubility can be regulated in various ways, it will be more desirable since the formation of resist patterns with higher accuracy becomes possible. A polysiloxane containing vinyl group or allyl group as R₂₂ or R₂₃ of formula (III) meets this requirement. Namely, in the polysiloxane, when it is mixed with an azido compound, there are formed bridges by the reaction of the vinyl group and the allyl group with the azido compound, making it possible to form finer patterns. Further, as the substituent groups R₂₂ and R₂₃ in formula (III) of polysiloxane other than the vinyl or allyl group, one may mention alkyl radical that has 1 to 10 carbon atoms, aryl group or substituted aryl group, or siloxy group or substituted siloxy group. Among these, as alkyl group with 1 to 10 carbon atoms, there may be mentioned, for instance, methyl group, ethyl group, n-propyl group, propyl group, n-butyl group, sec-butyl group, t-butyl group, n-pentyl group, n-hexyl group, n-actyl group, n-nonyl group, and n-decanyl group. As the substituted aryl group, one may mention, for instance, pheny group, o-hydroxyphenyl group, p-hydroxyphenyl group, o-methylphenyl group, p-methylphenyl group, β -naphthyl group, p-chlorophenyl group, o-methoxyphenyl group, p-methoxyphenyl group, and 9-anthranyl group. Furthermore, when R₂₂ and R₂₃ in formula (III) are a siloxy group or substituted siloxy group, it may be a structure such as shown in formula (VIII) or a two-dimensional or three-dimensional structure obtained by the bonding with the siloxy group or the substituted siloxy group in other molecules. Further, as concrete examples of the structural unit for the part (...) v of formula (III), there may be mentioned the following. It is to be noted that the compound shown by formula (III) can be manufactured, for example, by bringing a compound with unsaturated bond that is formed by protecting phenol or carbonic acid with trimethylsilyl, alkyl ether, acetyl or the like, and trichlorosilane, mono-substituted dichlorosilane or triethoxysilane, mono-substituted diethoxysilane into reaction by the use of platinum catalyst and others, and then by hydrolysis the product. Next, as the photosensitive agent, one may mention azido compounds that are used in the conventional photosensitive composites. In particular, one may mention 4,4'-diazidochalcone, 2,6-bis (azidobenzal) cyclohexanone, 2,6-bis (4'-azidobenzal)-4-methylenecyclohexanone, 1,3-bis (4'-azidobenzal)-2-propanone, 1,3-bis (4'-azido-cynnamyliden)-2-propanone, 4,4'-diazidostilbene, 4,4'-diazidobiphenyl, 4,4'-diazidodiphenylsulfide, 3,3'-diazidodiphenylsulfide, 4,4'-diazidodiphenylsulfone, 3,3'-diazidodiphenylsulfone, and other. In addition, compounds that are disclosed in Japanese Patents No. 50-70105, No. 50-40626, No. 49-8214, No. 48-94420, and No. 48-94410 may also be mentioned. Furthermore, compounds that contain naphthoquinone diazido group or benzoquinonediazido group may also be mentioned as the photo sensitive agent. These compounds can be obtained, for example, by condensing naphthoquinonediazido sulfonic acid chloride or benzo-quinonediazido sulfonic acid chloride, and low molecular or high molecular compound that has hydroxyl group, in the presence of a weak alkali. Here, as the examples of low molecular compounds, there may be mentioned hydroquinone, resolcine, phloroglucin, 2,4-di-hydroxybenzophenone, 2,3,4-trihydroxybenzophenone, 2,3,4,4'-tetrahydroxybenzopherone, gallic acid alkyl ester, catechin, quereetine, quinalizarin and purpurin. As examples of high molecular compound, there may be mentioned phenol-formaldehyde novolak resin, cresol-formaldehyde novolak resin, and polyhydroxystyrene. Among these, naphthoquinoneazidosulfonic acid ester or arylazido compound are preferred. These may be used separately or as a mixed system. In the silicone resist materials, alkaline soluble resin that is contained for reforming the spread film is subject to no special limitations so long as it is an alkaline soluble resin. Thus, one may mention poly-p-vinylphenol, poly-o-vinylphenol, poly-m-isopropenylphenol, poly-p-isopropenylphenol, m,p-cresol novolak resin, copolymer of p-vinylphenol and methyl metacrylate, copolymer of p-isopropenylphenol and anhydrous maleic acid, partial benzoyl compound of poly-p-vinylphenol, partial o-methylate of poly-p-vinylphenol, polymetacrylic acid, and polyacrylic acid. Especially preferable are those compounds that contain hydroxy group of phenol type. Further, the preferred amount of mixing of the alkaline soluble resin is 5 to 100 parts by weight for 100 parts by weight of the polysiloxane resin. The silicone resist materials of the present invention can be obtained easily by employing conventional method such as dissolving each component in solvents. In addition, to the composites of the present invention, there may be added other polymers such as epoxy resin, polymethylmetacrylate resin, propyleneoxide-ethyleneoxide copolymer, polystyrene, and silicone ladder polymer, as intensifier, dyes, surface active agent, and for film reforming, as need arises. Next, the process of forming patterns on wafers or the like by the use of silicone resist materials of the present invention will be described. First, a composite of the present invention is spread by dissolving it in a solvent. There are no special limitations on the solvent. As such solvent, one may mention, for example, toluene, xylene, o-dichloro-benzene, chloroform, ethanol, isopropyl alcohol, cyclopentanone, cyclohexanone, Cellosolve® acetate, and methylethylketone. Further, spreading may be carried out in accordance with the conventional method, but the spin coating method is preferred. After spreading of resin, it is dried. The conditions of drying are, for the case of resin for the bottom layer, temperature of ordinarily 50 to 250°C, preferably 80 to 220⁰C, and duration of ordinarily 0.5 to 120 minutes, preferably 1 to 90 minites. For the case of the silicone resist materials for the top layer, they are ordinarily 50 to 200°C, preferably 80 to 120°C, and ordinarily 0.5 to 120 minutes, preferably 1 to 60 minutes. Next, the silicone resist material of the present invention which forms the top layer film is exposed through a pattern mask. Exposure is carried out according to the conventional method, by the use of energetic radiation such as visible, infrared, or ultraviolet rays or electron beams. Then, development is carried out by the use of a solvent. Development is carried out ordinarily for 0.5 to 10 minutes, using an appropriate solvent such as aqueous solution of alkali, acetone, and the like. This is because the polysiloxane in the silicone resist materials is soluble to alkali as mentioned earlier. Following this, the product is dried ordinarily for 0.5 to 120 minutes at 50 to 200°C. In this way, the top layer resist pattern is formed. The top layer resist pattern is used as the mask for the bottom layer resist. Namely, when the mask is formed, oxygen RIE is carried out by irradiating oxygen gas plasma from above the mask. In that case, silicon atoms and oxygen atoms contained in the polysiloxane quickly form silicon dioxide as mentioned earlier. Consequently, the top layer film which serves as the mask displays a high resistance to oxygen RIE, only the portion of the bottom layer which is not covered by the mask is etched, and a profile of predetermined pattern is obtained. Here, the etching with oxygen gas plasma is appropriate to be carried out for 1 to 120 minutes at a pressure of 1 x 10⁻⁴ to 1 x 10⁻¹ Torr at the power density of 0.01 to 10 W/cm². In addition, in the above etching, use may be made of an appropriate solvent. Etching of the substrate is carried out by the use of a pattern formed in the above manner as the mask. Etching may be done according to wet etching or dry etching. However, dry etching is preferred if the formation of fine patterns of less than 3 µm is to be carried out. The unexposed portion that remains on the substrate is removed from the above substance after etching, by the use of a remover such as J-100 (made by Nagase Chemical Industry Company), oxygen gas plasma, and others. The composites of the present invention may be mixed, depending upon the needs, with dyes, a surface active agent, a resin such as polystyrene and polymetacrylic acid that improves the film formation property, and so forth. The photosensitive composites of the present invention may be manufactured easily by mixing and stirring the above components in a solvent such as cyclohexanone. Next, an example of usage of the photosensitive composite of the present invention will be described. First, resin for the bottom layer is required to be removable by oxygen gas plasma. The bottom layer is obtained, for example, by dissolving novolak resin, polyimide resin, rubber-based negative-type resist, novolak-based positive-type resist, polystyrene, or polymethyl metacrylate in a solvent such as xylene, ethylcellosolve acetate, cyclohexanone, ethanol, and methylethyl ketone, and rotary-spreading the solution on a supporting body such as a silicon wafer, and drying (at 50 to 250°C, preferably 70 to 200 °C for 0.5 to 180 minutes, preferably 1 to 120 minutes). The thickness of the bottom layer resin is required to be able to smooth out the steps that exist in the substrate and be sufficiently thick to be able to withstand the conditions at the time of pressurizing the substrate, so that it is ordinarily necessary to have a thickness of more than 1.5 µm. Then, the photosensitive composite is dissolved in a solvent such as xylene, cyclohexanone, ethylcellosolve acetate, and methylethyl ketone, and spread, and dried (for 30 seconds at 50 to 180°C, preferably at 70 to 140°C). After that, through, for example, a quartz mask, it is exposed to ultraviolet radiation in a proper wavelength region (200 to 400 µm) according to the conventional method. Following that, development is given by using a proper alkaline solution (1 to 15% aqueous solution of tetramethylammonium hydroxide or hydroxy-ethyltrimethyl ammonium hydroxide). After that, it is dried, and the resin film of the bottom layer is given a patterning by oxygen gas plasma, using the pattern that is formed from the photosensitive composite as the mask. Then, the supporting body, for example, a silicon wafer is etched and metalized according to the conventional processing method. As described in the above, the photosensitive composite of the present invention possesses an excellent sensitivity and resistance to oxygen RIE. Further, it is not affected by the level differences in the substrate so that the film thickness can be reduced. As a result, the resolving power of the pattern can be improved, and it is extremely convenient for fine processing. Further, since it can be developed in an alkaline solution, it is less easy to swell compared with the case of carrying out development by the use of an organic solvent, and hence it becomes possible to form fine patterns. The present invention will be described in further detail by the following examples. Example 1 Eighty parts by weight of a polysiloxane resin (molecular weight : 5,000) that possesses a structural unit shown by and 20 parts by weight of 4-azido-2'-methyl-4'[N-(2-ethoxyethyl)-N-ethyl-amino]-cyanostilbene as a photosensitive composite, were dissolved in 200 parts by weight of cyclohexanone, to prepare a photosensitive composite. Next, a bottom layer was formed by spreading with spinner a commercially available novolak-based resist OFPR-800 (manufactured by Tokyo Ohka Kogyo K. K.) on a silicon wafer, and by drying it for 1 hour at 220°C. The thickness of the bottom layer was 2.0 µm. Next, the photosensitive composite solution obtained above was spread with spinner on top of the top layer, and a photosensitive coated film with a thickness of 0.5 µm was formed by drying it on the hot plate for 2 minutes at 900°C. Following that, a resist pattern was obtained by exposing the product to an exposure apparatus for reduced projection (stepper) that employs monochromatic radiation with wavelength of 436 nm, and by developing it for 45 seconds in a 1.5% aqueous solution of tetramethylammonium hydroxide. After that, by an etching for 30 minutes that employs oxygen gas plasma (2.0 x 10⁻² Torr and 0.06 W/cm²), there was obtained a satisfactory pattern with line width of 0.5 µm. Example 2 With treatments analogous to those of Example 1, except for the use of 1,2-naphthoquinonediazido-5-sulfonic acid ester (average esterification factor of 2.0) of 2,3,4-trihydroxybenzophenone, there was formed a satisfactory pattern with line width of 0.5 µm. Example 3 Eighty parts by weight of a polysiloxane resin (molecular weight : 7,000) that has a structure shown by and 20 parts by weight of 1,2-naphthoquinonediazido-5-fulfonic acid ester (average esterification factor of 3.0) of purpurin as the photosensitive agent were mixed with 200 parts by weight of cyclohexanone to prepare a photosensitive composite. Pattern formation analogous to Example 26 resulted in the formation of a satisfactory pattern with line width of 0.5 µm. Example 4 By giving identical treatments to those of Example 1, except for the use of a resin with a structural unit as shown by as the polysiloxane resin, there was formed a pattern with line width 0.5 µm. Example 5 With treatments sililar to those of Example 4, except for the use of 1,2-naphthoquinonediazido-5-sulfonic acid ester (average esterification factor of 2.0) as the photosensitive compound, there was formed a satisfactory pattern with line width of 0.5 µm. Example 6 With treatments similar to those of Example 4, except for the use of a polysiloxane resin that has a structural unit as shown by there was formed a satisfactory pattern with line width 0.5 µm. Example 7 One hundred parts by weight of a compound (molecular weight : 2,000) that has a structural unit shown by as a photosensitive compound, 50 parts by weight of 4-azido-2'-methyl-4'-[N-(2-ethoxyethyl)-N-ethylamino]-α -cyanostilbene, and 100 parts by weight of polyvinylphenole (molecular weight : 23,000) as alkaline soluble resin, were mixed and dissolved in 1,000 parts by weight of cyclohexanone to prepare a photosensitive composite. When a pattern was formed in a manner similar to Example 26, there was formed a satisfactory pattern with line width 0.5 µm. Example 8 When treatments analogous to those of Example 7, except for the use of 1,2-naphthoquinonediazido-5-sulfonic acid ester (average esterification factor of 2.0) of 2,3,4-trihydroxybenzophenone as a photosensitive compound, there was formed a satisfactory pattern with line width 0.5 um. Example 9 Thirty parts by weight of a polysiloxane resin (molecular weight : 3,000) that possesses a structural unit as shown by and 100 parts by weight of a commercial positive type resist OFPR-800 [manufactured by Tokyo Applied Chemistry Company, 30% of solid component (consisting of m,p-cresol novolak resin, naphthoquinonediazidosulfonic acid ester of 2,3,4-trihydroxybenzophenone, and a solvent)] were mixed to prepare a photosensitive composite. Pattern formation analogous to Example 1 showed a formation of a satisfactory pattern with line width of 0.5 µm. Example 10 One hundred parts by weight of a compound (molecular weight : 2,500) that possesses a structural unit as shown by as a polysiloxane resin, 50 parts by weight of naphtho-quinonediazidosulfonic acid ester (esterification factor for -OH group being 80%) of quercetine as a photosensitive compound, and 50 parts by weight of m,p-cresolnovolak resin (molecular weight : 4,000) as an alkaline soluble resin, were mixed to prepare a photosensitive composite. Pattern formation analogous to Example 1 showed the formation of a satisfactory pattern with line width 0.5 µm. Example 11 One hundred parts by weight of a compound (molecular weight : 3,000) that possesses a structural unit as shown by as a polysiloxane resin, 30 parts by weight of naphthoquinone-diazidosulfonic acid ester (esterification factor for -OH group being 80%) of quercetine as a photosensitive compound, and 30 parts by weight of silicone ladder polymer GR-950 (manufactured by Owens-Illinois of the United States) were mixed to prepare a photosensitive composite. Pattern formation analogous to Example 1 showed the formation of a satisfactory pattern with line width 0.5 µm. Example 12 With treatments analogous to Example 11, except for the use of a compound that possesses a structural unit as shown by as a photosensitive compound, there was formed a satisfactory pattern with line width 0.5 µm. Example 13 A silicone resist material was prepared by dissolving 15 parts by weight of a polysiloxane (molecular weight : 5,000) that possesses a structural unit as shown by in 85 parts by weight of 1-acetoxy-2-ethoxyethane. Next, a commercially available novolak-based resist OFPR-800 (manufactured by Tokyo Applied Chemistry Company) was spread over a silicon wafer by the use of a spinner. A bottom layer was formed by drying it for 1 hour at 220°C. The thickness of the bottom layer was 2.0 µm. On top of it, there was spread by spinner the silicone resist solution obtained in the above. By drying it for 2 minutes at 90°C on the hot plate, there was produced a silicone resist film of thickness 0.5 µm. Then, a resist pattern was formed by exposing the obtained film to electron beams (20 kV and 50 µc) with pattern width of 0.2 µm, and by carrying out development for 60 seconds in a 2.5% aqueous solution of tetramethylammoniumhydroxide. With etching for 30 minutes by means of oxygen gas plasma (2 x 10⁻² Torr and 0.06 W/cm²), there was formed a satisfactory pattern with line width 0.2 µm. Example 14 Eighty parts by weight of a polysiloxane (molecular weight : 7,000) that is shown by and 20 parts by weight of 3,3'-diazidodiphenylsulfone were mixed with 500 parts by weight of 1-acetoxy-2-ethoxy-ethane to prepare a silicone resist solution. This solution was spread to produce a film. A mask, which was drawn with chrome on a quartz substrate with a pattern of 0.4 µm line width, was placed in close contact on the film that was obtained in the above, exposed to a radiation from a high tension mercury lamp (250 W) which is used as a light source, and was developed for 90 seconds in a 2.0% aqueous solution of tetramethylammonium hydroxide. When it was treated with oxygen gas plasma similarly to Example 38, there was obtained a pattern with line width 0.4 µm. Example 15 A silicone resist material was prepared by dissolving 15 parts by weight of a polysiloxane (molecular weight: 4,000) that has a structural unit as shown by in 85 parts by weight of 1-acetoxy-2-ethoxyethane. Giving spreading, drying, and exposure similar to Example 38, developing for 60 seconds with 2.3% aqueous solution of tetramethylammonium hydroxide, and after treating with O₂ gas plasma as in Example 13, there was obtained a satisfactory pattern of line width 0.2 µm that has a sensitivity of 100 µc. Example 16 A silicone resist material was prepared analogously to Example 15, except for an addition of 5 parts by weight of 3,3'-diazido-diphenylsulfone as the azido compound for 15 parts by weight of polysiloxane. As a result, there was obtained a satisfactory pattern with line width 0.2 µm that has a sensitivity of 20 µc. Example 17 A silicone resist material was prepared similar to Example 15, by adding 4 parts by weight of 2,3,4,4'-tetrahydroxy-benzophenone-tri (1,2-naphthoquinone-2-diazido-5-sulfonic acid) ester as the photosensitive agent for 15 parts by weight of polysiloxane. The product was spread and a film was formed similarly to Example 13. Then, exposure was carried out by using a contracted projection and exposure apparatus (wavelength of the light source: g-line; lens aperture number NA = 0.42), and it was developed for 90 seconds using 2.38% aqueous solution of tetramethylammonium hydrozide. After an O₂ gas RIE, there was obtained a pattern with line width 0.5 µm. Example 18 Fifteen parts by weight of a polysiloxane (molecular weight: 5,000) that has a structural unit as shown by was dissolved in 85 parts by weight of 1-acetoxy-2-ethoxy-ethane to prepare a silicone resist material. It was spread, dried, and exposed similar to Example 13, and was developed for 60 seconds using 2,38% aqueous solution of tetramethylammonium hydroxide. After an O₂ gas plasma treatment similar to Example 13 there was obtained a satisfactory pattern with line width 0.2 µm that has a sensitivity of 40 µc. Example 19 A silicone resist material was prepared similar to Example 18 in which 5 parts by weight of 3,3'-diazidophenyl-sulfone was added as the photosensitive agent to 15 parts by weight of the polysiloxane of Example 18. It was spread, dried, and exposed similar to Example 13, and was developed for 45 seconds using 2.38% aqueous solution of tetramethylammonium hydroxide. After an O₂ gas plasma treatment there was obtained a satisfactory pattern with line width 0.2 µm that has a sensitivity of 5 µc. Example 20 A silicone resist material was prepared by dissolving 10 parts by weight of a polysiloxane (molecular weight: 5,000) that has a structural unit as shown by and 5 parts by weight of a novolak resin (molecular weight: 4,000) that has a composition of (m-cresol : p-cresol : 2,5-xylenol = 45 : 25 : 30) in 85 parts by weight of 1-acetoxy-2-ethoxyethane. It was spread, dried, and exposed similar to Example 13, and was developed for 60 seconds by using 5% aqueous solution of choline. After an O₂ gas plasma treatment silimar to Example 13 there was obtained a satisfactory pattern with line width 0.2 µm that has a sensitivity of 100 µc. Example 21 A silicone resist material was prepared similar to Example 20 by adding 5 parts by weight of 1-cyano-1-(4-azidophenyl)-4-furyl-1,3-butadiene as the photosensitive agent for 15 parts by weight of the polysiloxane and the novolak resin of Example 20. It was spread, and a film was formed similar to Example 38. Then, exposure was carried out by the use of a contracted projection and exposure apparatus (wavelength of the light source: g-line; lens aperture number NA = 0.42), and development was carried out for 60 seconds using 5% aqueous solution of choline. After an O₂ gas plasma treatment similar to Example 13 there was obtained a satisfactory pattern with line width 0.5 µm. Example 22 An amount, 20.2 g, of triethylamine was added to 1ℓ THF solution of 18.3 g of 4-hydroxymethyl-2-nitrobenzyl alcohol, and was heated to 50°C while stirring. Into this solution was dropped 200 ml THF solution of 19.1 g of methylphenyldichlorosilane, by taking a time of 2 hours. After that, the solution was refluxed around while heating. Then, the salt produced was filtered out and the filtrate was concentrated to obtain a photosensitive composite of the present invention. A bottom layer with film thickness of 1.8 µm was formed by spreading a positive type resist, OFPR-800, (manufactured by Tokyo Ohka Kogyo K. K.) on a silicon wafer by means of a spinner, and by drying it in a clean oven (at 200°C for 1.5 hours). Next, a photosensitive film of thickness 0.5 µm was formed by spreading by means of a spinner a 5% xylene solution of the photosensitive composite of the present invention obtained above, and by heating it on a hot plate (at 100°C for 3 hours). Then, the substrate was exposed for 10 seconds to the radiation from a high pressure mercury lamp of 250 W, using a quartz mask. The substrate obtained in this way was developed using 5% methanol aqueous solution of 5.0% tetramethylammonium hydroxide. Then, by washing with water and drying on a hot plate (at 130°C for 5 minutes), there was formed a pattern that consists of 1 µm lines and spaces. By further treating the substrate with oxygen gas plasma (0.05 Torr, 0.06 W/cm², and 30 minutes), there was formed on the resist layer of the bottom layer a pattern that consists of 1 um lines and spaces. Example 23 To 1ℓ THF solution of 16.9 g of 4-hydroxy-2-nitrobenzyl alcohol, 20.2 g of triethylamine was added, and the mixture was heated to 50°C while stirring. Into this solution, 200 ml THF solution of 20.5 g of ethylphenyldichlorosilane was dropped by spending a time of 2 hours. Then, the mixture was heated for 2 hours while being refluxed. After that, salt that was formed was filtered out and the filtrate was concentrated to obtain a photosensitive composite of the present invention. When treatments analogous to those of Example 15 were given to the photosensitive composite thus obtained, it was found that there was formed a pattern that consists of lines with 1 µm width and spaces.

Claims: Use of a polysiloxane resist material comprising a polysiloxane consisting of repeating units of formula (II) wherein a substituent group R₁₀ represents an alkyl group, vinyl group, allyl group, aryl group or substituted aryl group, or siloxy group or substituted siloxy group, and at least one of substituent groups R₁₁ to R₁₅ is a hydroxyl group and the remaining groups other than the hydroxyl groups among the substituent groups R₁₁ to R₁₅ may be identical or may be different, and each of them represents a hydrogen atom, a halogen atom, an alkyl group or a substituted alkyl group, a carboxyl group, an alkylcarbonyl group, an alkoxycarbonyl group, an alkoxy group, an acyloxy group, an allyl group, an aryl group, or a substituted aryl group, for the production of resist patterns, wherein after irradiation of said resist material the exposed portion thereof is removed by an alkaline aqueous solution. The use of claim 1, characterized in that the resist material comprises a polysiloxane of formula (II) and a photosensitive agent. The use of claim 2 wherein said alkyl group with 1 to 10 carbon atoms is a methyl group, ethyl group, n-propyl group, isopropyl group, n-butyl group, sec-butyl group, t-butyl group, n-pentyl group, n-hexyl group, n-octyl group, n-nonyl group, or n-decanyl group. The use of claim 2 wherein said substituted aryl group is a phenyl group, o-hydroxyphenyl group, p-hydroxyphenyl group, o-methylphenyl group, p-methylphenyl group, β-naphthyl group, or p-chlorophenyl group. The use of claim 2, wherein said substituent group R₁₀ is a methyl group, phenyl group, or p-hydroxyphenyl group, R₁₃ is a hydroxyl group, and R₁₁ and R₁₂, R₁₄ and R₁₅ are all hydrogen atoms. The use of claim 2 wherein said substituent group R₁₀ is a phenyl group, R₁₁ and R₁₂ are hydrogen atoms, and R₁₃, R₁₄ and R₁₅ are mutually different and are either of hydrogen atom, methyl group, and hydroxyl group. The use of claim 2 wherein said photosensitive agent is an azido compound, naphthoquinonediazidosulfonic acid ester, or diazonium salt. The use of claim 2 wherein the compounding ratio of said polysiloxane and photosensitive agent is 5 to 100 parts by weight of the photosensitive agent to 100 parts by weight of the polysiloxane. The use of claim 2 wherein the resist material further comprises a resin selected from m,p-cresol novolak resin, poly-p-vinylphenol, poly-o-vinylphenol, copolymer of p-vinylphenol and methyl methacrylate, partial benzoylated poly-p-vinylphenol and partial o-methoxylated poly-p-vinylphenol, and wherein this resin is present in an amount of from 5 to 100 parts by weight per 100 parts by weight of the polysiloxane resin. The use of claim 2 wherein said photosensitive agent possesses a structural unit that is shown by the formula: Use of polysiloxane resist material comprising a photosensitive agent and a polysiloxane of formula (III) wherein a substituent group R₁₆ is an alkyl group with 1 to 10 carbon atoms or a substituted or nonsubstituted aryl group with 6 to 14 carbon atoms, at least one of substituent groups R₁₇ to R₂₁ is a group containing a carboxyl group or a phenolic hydroxyl group, and the groups other than the group containing the carboxyl group or the phenolic hydroxyl group among the substituent group R₁₇ to R₂₁ are hydrogen atom, halogen atom, alkyl group, halgeno-alkyl group, cyanoalkyl group, carboxyl group, alkylcarbonyl group, alkoxycarbonyl group, alkoxy group, alkoxyalkyl group, acyloxy group, alkyl group, or substituted or nonsubstituted aryl group with 6 to 14 carbon atoms, substituent groups R₂₂ and R₂₃ are the vinyl group, the allyl group, an alkyl group with 1 to 10 carbon atoms, aryl group or substituted aryl group, or siloxy group or substituted siloxy group, and u and w are positive integers and v is zero or a positive integer, for the production of resist patterns, wherein after irradiation of said resist material the exposed portion thereof is removed by an alkaline aqueous solution. The use of claim 11 wherein the ratio v/u is in the range of 0.0 and 0.4. The use of claim 11 wherein the alkyl group with 1 to 10 carbon atoms in said substituent group R₁₆ is a methyl group, ethyl group, n-propyl group, isopropyl group, n-butyl group, sec-butyl group, t-butyl group, n-pentyl group, n-hexyl group, n-octyl group, n-nonyl group, or n-decanyl group. The use of claim 11, wherein the substituted aryl group in said substituent group R₁₆ is a phenyl group, o-hydroxyphenyl group, p-hydroxyphenyl group, o-methylphenyl group, p-methylphenyl group, β -naphthyl group, or p-chlorophenyl group. The use of claim 11 wherein the alkyl group with 1 to 10 carbon atoms in said substituent groups R₂₂ and R₂₃ is a methyl group, ethyl group, n-butyl group, sec-butyl group, t-butyl group, n-pentyl group, n-hexyl group, n-octyl group, n-nonyl group, or n-decanyl group. The use of claim 11, wherein the aryl group in said substituent groups R₂₂ and R₂₃ is a phenyl group, o-hydroxyphenyl group, p-hydroxyphenyl group, o-methylphenyl group, p-methylphenyl group, β-naphthyl group, p-chlorophenyl group, o-methoxyphenyl group, p-methoxyphenyl group, or 9-anthranyl group. The use of claim 14 wherein said substituent group R₁₆ is a phenyl group, R₁₇ and R₁₈ are hydrogen atoms, said groups R₁₉, R₂₀, and R₂₁ are mutually different, each being one of a hydrogen atom, methyl group, or p-hydroxyphenyl group, and said groups R₂₂ and R₂₃ are mutually different, each being a phenyl group or an allyl group. The use of claim 14 wherein said group R₁₆ is a phenyl group, said group R₁₇ and R₁₈ are mutually different, each being a hydrogen atom or a 3-methyl-4-hydroxyphenyl group, two of said groups R₁₉, R₂₀, and R₂₁ are hydrogen atoms and the remaining one is a methyl group, and said groups R₂₂ and R₂₃ are mutually different, each being a vinyl group or a phenyl group. A polysiloxane resist material comprising a polysiloxane consisting of repeating units of formula and a photosensitive agent, and wherein the compounding ratio of said polysiloxane and photosensitive agent is 5 to 100 parts by weight of the photosensitive agent to 100 parts by weight of the polysiloxane. A polysiloxane resist material comprising a photosensitive agent and a polysiloxane of formula (III) wherein groups R₁₆, R₂₂ and R₂₃ are phenyl groups, R₁₇ and R₁₈ are mutually different, each being a hydrogen atom and 3-methyloxy-4-hydroxyphenyl group, and R₁₉, R₂₀ and R₂₁ are hydrogen atoms for two of them and the remaining one is a methyl group, and wherein the compounding ratio of said polysiloxane and photosensitive agent is 5 to 100 parts by weight of the photosensitive agent to 100 parts by weight of the polysiloxane, and u and w are positive integers and v is zero or a positive integer. A polysiloxane resist material comprising a photosensitive agent and a polysiloxane of formula (III) as stated in claim 20 wherein group R₁₆ is a phenyl group, R₁₇ and R₁₈ which differ mutually are respectively a hydrogen atom and 3-methyloxy-4-hydroxyphenyl group, R₁₉, R₂₀ and R₂₁ are hydrogen atoms for two of them and the remaining one is a methyl group, and R₂₂ and R₂₃ which differ mutually are respectively a methyl group and a group represented by -CH₂-CH₂-CH₂-OCO-C(CH₃)=CH₂, and wherein the compounding ratio of said polysiloxane and photosensitive agent is 5 to 100 parts by weight of the photosensitive agent to 100 parts by weight of the polysiloxane. A polysiloxane resist material comprising a photosensitive agent and a polysiloxane of formula (III) as stated in claim 20, wherein said group R₁₆ is a phenyl group, R₁₇ and R₁₈ which differ mutually are respectively a hydrogen atom and 3-hydroxy-4-ethyloxyphenyl group, R₁₉, R₂₀ and R₂₁ are hydrogen atoms for two of them and the remaining one is a methyl group, and R₂₂ and R₂₃ are methyl groups, and wherein the compounding ratio of said polysiloxane and photosensitive agent is 5 to 100 parts by weight of the photosensitive agent to 100 parts by weight of the polysiloxane. The resist material of any of claims 19 to 22 wherein said photosensitive agent is an azido compound, naphthoquinonediazidosulfonic acid ester, or diazonium salt. The resist material of any of claims 20 to 22 wherein for the case of v ≧ 1, said photosensitive agent is a diazido compound.

Inventors: HAYASE RUMIKO, HAYASE SHUJI, HIRATA AKIKO, ONISHI YASUOBU, HAYASE, RUMIKO, HAYASE, SHUJI, HIRATA, AKIKO, ONISHI, YASUOBU
Applicants: TOSHIBA KK, KABUSHIKI KAISHA TOSHIBA
Application year: 1986
Main classification: C08G77
IPC codes: C08G77, G03F7