A METHOD OF OPTICAL RECORDING

Abstract: A method of optical recording uses a film of a material which has a crystallisation temperature between 100°C and 400°C and can be switched between the amorphous and the crystalline states. Both the amorphous and crystalline states are substantially a single phase where the stoichiometric ratio of the material remains unchanged. A spot on the film is heated with a laser beam with a controlled pulse duration and intensity to melt the material in the spot. When the laser irradiation is stopped, the material in that spot is quenched at a rate that produces the desired state, that is, either to the crystalline or the amorphous state.

Description: This invention relates to a method of optical recording. US-A-3,530,441 describes the use of transitions between amor­ phous and crystalline states in a semiconductor material to store information. An example of a memory semiconductor material contains about 85% tellurium and 15% gemanium in atomic percent with inclu­ sions of some oxygen and/or sulfur. The state of these amorphous materials can be changed by applying electrical, optical or thermal energy thereto. In one state such material has a so-called non-­ crystalline or amorphous bulk structure which has a low optical density. In the other state the material has a crystalline struc­ ture which has a relatively high optical density. US-A-3,971,874 describes the use of a transition between amorphous and crystalline states in a tellurium oxide film. Again, the non-crystalline structure has a low optical density and the crystalline structure has a relatively high optical density. US-A-4,091,171 describes a transition between amorphous and crystal­ line states in Ge, Sn, Sb, Tl, Bi and Mo sub-oxide. US-A-4,278,734 covers transitions between amorphous and crystalline states in metal or semi-metal sub-oxide. In all of the foregoing documents, the change in optical density occurs when the phase changes from amor­ phous to crystalline. In the 'phase change' scheme for optical recording in the systems described in the aforementioned documents, a laser beam is used to heat a material and switch it alternately between an amor­ phous and a crystalline state. Typically, a short intense laser pulse, for example, pulse of 12 mW power and 50 nsec duration, is used for writing which melts the material and allows it to quench into an amorphous or an atomically disordered state. For erasing, a longer pulse, for example, of 4 mW power and 10 µsec duration, is employed, allowing the material to relax into its lower energy crystalline state. The erasing step for a particular medium is commonly charac­ terised by the minimum pulse width of the laser beam required for crystallisation. With prior art materials, the minimum crystalli­ sation pulse width for erasing is between 1,000 ns and 80,000 ns. In typical optical recording systems a disk is coated with a film of the storage material. Since the disk is rotated with a velocity of at least 4 microns per microsecond, an elliptical beam is required in order that each micron sized spot be subjected to sufficient exposure time for erasure. A material with a 1000 ns minimum cry­ stallisation pulse width requires a 4 micron pulse length. As a result, prior art systems require 2 laser beams, one laser beam of 1 micron size for writing purposes and a second elliptical beam >4 microns long for erasing purposes. This invention seeks to provide an improved method of recor­ ding. A method of optical recording comprises, according to the invention, the steps of (1) depositing a film of a material which has a crystallisa­ tion temperature between 100°C and 400°C and which can be switched between the amorphous and the crystalline states where both states are substantially of a single phase with the same stoichiometric ratio, said amorphous state and said crystalline state having different optical properties, and (2) heating a spot in said film with a laser beam with con­ trolled pulse duration and intensity to melt the material in said spot, whereby cessation of the laser radiation causes the material in said spot to quench at a suitable rate to produce the desired state. The spot on the film which is heated is typically from 20 to 100 nm thick. Preferably the materials have the ability to crystallise in <300 ns. Materials which can be erased in <300 ns can be erased in a single pass using a 1µm laser beam. Thus, only one laser, pro­ viding a 1µm circular spot, is needed in the recording head. With slower erasing materials the erase beam spot must be elliptical; that means that there is need for incorporating two lasers in the recorder head. The simplicity and cost advantage of a one-laser head over a two-laser head is enormous. Alternatively, two laser beams may be employed in the recording head: one for erasure and one for writing. When the recording material can be erased in less than 300 nsec, then each beam need only be 1µm in width. These two beams can be produced simultane­ ously in an inexpensive laser diode array. With slower erasing materials, the erase beam must be elliptical and the optical head must incorporate 2 separate laser beams. This adds considerable complexity and cost to the design of the recording system. The other requirement for a material besides a short erase time is that the material must be stable in the amorphous state, i.e the material must have a relatively high crystallisation temperature such as above 100°C. If the materials crystallise at temperatures below 80°C they are unacceptable, whereas if they crystallise between 100°C and 400°C they can have the desired stability. Materials for use in the process of the present invention include, for example, GeTe, GeTe with small amounts of additional elements (such as (GeTe)₈₅Sn₁₅), GeTe with isoelectronic substitu­ tions (such as Te₅₀ Ge (50-x) Sn x or Te ₅₀Ge (50-x) Si x ) where x is from 10 to 25, InSb, (InSb) 100-x Ge x , where x is between 0 and 10, In x Ga (50-x) Sb₅₀, Sb₂Se, Sb (100-x) Se x is between 0 and 40, any of the following: SnTe, PbTe, SbSe, Sb₂Se₃, Bi₂Se, BiSe, Bi₂Se₃, Bi₂Te, BiTe, Bi₂Te₃, Sb₂Te, SbTe, Sb₂Te₃, TeSi,Ag₂Se, AgSe₂, Ag₂Te, Ag₃Te₂, AgTe₂, Au₂Se₃, AuTe₂, GeSe. The material (GeTe)₈₅Sn₁₅ has been deposited on 200 mn poly­ methylmethacrylate (PMMA) substrates and tested for its suitability as an optical recording medium. The active layer was typically 75 nm thick and sandwiched between 250 nm layers of ZnS or 7059 (Corn­ ing) glass used for ablation protection and thermal isolation. 2.5 MHz carrier signals were recorded on this disk and, on playback, showed carrier to noise levels of up to 56 dB (using 30 kHz band­ width). The laser pulses employed for writing were 18 mW in power, 55 nsec in duration, and one micrometer in width. These signals could be completely erased in one disk revolution with a DC laser beam of 10 mW power focussed to the same one micron spot. With disk rotations of 600 rpm, the dwell time of the laser spot on the medium was as short as 200 nsec. The tracks could be repeatedly written and erased 1000 times with no degradation in signal to noise ratio. One micro spots written onto glass coupon samples were subjected to heat stress tests. No degradation in spot size was observed after 6 months in 110 degrees centigrade. The active layer (GeTe)₈₅Sn₁₅, then, is an amorphous to crystalline 'phase change' optical record­ ing medium that has very very good data stability combined with extremely short erase time.

Claims: 1. A method of optical recording comprising the steps of (1) depositing a film of a material which has a crystallisa­ tion temperature between 100°C and 400°C and which can be switched between the amorphous and the crystalline states where both states are substantially of a single phase with the same stoichiometric ratio, said amorphous state and said crystalline state having different optical properties, and (2) heating a spot in said film with a laser beam with con­ trolled pulse duration and intensity to melt the material in said spot, whereby cessation of the laser radiation causes the material in said spot to quench at a suitable rate to produce the desired state. 2. A method as claimed in claim 1, wherein the material is (TeGe)₈₅Sn₁₅. 3. A method as claimed in claim 1, wherein the material is (TeGe)1-xSnx, where x is from 0.1 to 0.25. 4. A process as claimed in claim 1, wherein the material is GeTe. 5. A process as claimed in claim 1, wherein the material is Sb₂Se. 6. A process as claimed in claim 1 wherein the material is Sb100-xSex, where x is between 0 and 40. 7. A process as claimed in claim 1, wherein the material is (InSb)100-xGex, where x is between 0 and 10. 8. A process as claimed in claim 1, wherein the material is (Ga100-xInx)₅₀Sb₅₀, where x is between 0 and 100. 9. A process as claimed in any preceding claim, wherein the film is about 20 to 100 nm thick.

Inventors: BARTON, ROGER WESTWOOD, CHEN, MARTIN YU-WEN, DAVIS, CHARLES RAYMOND, LIM, GRACE SU, MARRELLO, VINCENT NMN, RUBIN, KURT ALLAN
Applicants: INTERNATIONAL BUSINESS MACHINES CORPORATION
Application year: 1986
Main classification: G11B7
IPC codes: G11B7