SEMICONDUCTOR LASER ARRAY

Abstract: A semiconductor laser array includes a plurality of stripe-­ shaped stimulated regions of the index guide type. A plurality of buried layers are disposed between each of the plurality of stripe-shaped stimulated regions. A light absorption layer is formed in each of the plurality of stripe-shaped stimulated regions so that the stimulated region has the optical loss greater than the buried layer, whereby the optical coupling is performed with no phase difference.

Description: The present invention relates to semiconductor lasers. Semiconductor lasers have been widely used as light sources in optical information processing systems such as optical communication systems and digital audio disc systems. Further, semiconductor lasers are widely used in optical disc systems in which information can be written into the optical memory disc through the use of a semiconductor laser with output power modulated in accordance with the information to be written into the optical memory disc. As the amount of information to be handled increases, rapid processing is required in such optical information processing systems. Accordingly, in order to ensure rapid processing, the semiconductor laser must emit a laser beam at a high power level over a stable operating range. However, in conventional semiconductor lasers having a single stimulated region, the practical maximum output is about 40 mW. To enhance the output level, semiconductor laser arrays have been proposed in which a plurality of stimulated regions are aligned in a parallel fashion, with the plurality of stimulated regions optically phase coupled to each other so as to emit a laser beam of a single phase. This is referred to as a phase coupled laser array. Such phase coupled semiconductor laser arrays are effective in converging laser beams to a narrow radiation angle. EP 0064339 describes one such semiconductor laser device that includes strip-like optical absorption regions. In conventional semiconductor laser arrays of the gain guide type, the gain is substantially reduced at the coupling region positioned between two adjacent laser emitting regions and therefore, there is a phase difference of 180 degrees between the electric fields of the two adjacent laser emitting regions. The far field pattern has a plurality of peaks shown in the FIGURE 8. Thus, conventional semiconductor laser arrays of the gain guide type can not ensure practical use. To alleviate the above-mentioned problems, semiconductor laser arrays of the index guide type have been proposed. For example, D.E. Ackley et al, of Hewlett-Packard Laboratories proposed semiconductor laser arrays of leaky mode buried heterostructure lasers (Appl. Phys. Letters, vol. 39, 1981,pp.27). The proposed laser array ensures effective coupling of the laser emitting regions, but has two peaks in the far field pattern because of the leaky mode. D. Botez et al of RCA Laboratories proposed a CSP-LOC (Channeled Substrate-Large-Optical-Capacity) laser (document of IOOC, 1983, 2985-2). The proposed semiconductor laser utilizes the distribution of effective refractive index which is formed by the coupling to the GaAs substrate. The region disposed between the two adjacent laser emitting regions has a high absorption coefficient. There is no refractive index difference when the absorption coefficient is minimized. Accordingly, it is difficult to reduce the phase difference between two adjacent laser emitting regions to zero. D.E. Ackley et al of Hewlett-Packard Laboratories further proposed semiconductor laser array of the ridge-type (Appl. Phys. Letter, vol. 42, 1983,pp.152). Each pair of two adjacent laser emitting regions has a phase difference of 180 degrees because of the high absorption caused by the electrode disposed at the coupling region of two adjacent laser emitting regions. EP 0010949 describes cross-coupling between strip-like emission regions in a semiconductor laser device which includes a current confinement structure. Accordingly, it is an aim of the present invention to ameliorate the aforementioned problems. In accordance with a first aspect of the present invention an index-guided semiconductor laser array, comprises: a semiconductor substrate; a multi-layer structure on the substrate, including an active layer, and first and second cladding layers; and electrode layers for supplying stimulating current for causing laser generation in the active layer; said structure being formed with a plurality of buried layer regions for confining the stimulating current which, in use, flows into the active layer, through a respective plurality of stripe-shaped parallel stimulated regions in said structure, said stimulated regions having a greater refractive index than the buried layer regions lying between them; said stimulated regions each including a respective light absorption layer producing greater light loss in said stimulated regions than in said buried layer regions, so as to produce phase coupling of the laser beams generated from each said stimulated region. In accordance with a second aspect of the present invention an index-guided semiconductor laser array, comprises a semiconductor substrate formed with a plurality of parallel stripe-shaped mesas; a multi-layer structure on the substrate, including an active layer and first and second cladding layers; and electrode layers for supplying stimulating current for causing laser generation in the active layer; said structure being formed with a plurality of current paths over said mesas for confining the stimulating current which, in use, flows into the active layer, through a respective plurality of stripe-shaped parallel stimulated regions formed in the structure over the respective mesas; the first cladding layer on the substrate side of the active layer having relatively thin portions at the positions of the mesas, and relatively thick portions between said mesas, said relatively thin portions producing greater light loss in said stimulated regions than in the intermediate regions lying between them, so as to produce phase coupling of the laser beams generated from each said stimulated region. The present invention will be better understood from the detailed description given hereinbelow and the accompanying drawings which are given by way of illustration only, and thus are not limitative of the present invention and wherein: FIGURE 1 is a sectional view of an embodiment of a semiconductor laser array of the present invention; FIGURES 2, 3, 4 and 5 are sectional views for explaining manufacturing steps of the semiconductor laser array of FIGURE 1; FIGURE 6 is a graph showing the far field pattern obtained by the semiconductor laser array of FIGURE 1; FIGURE 7 is a sectional view of another embodiment of a semiconductor laser array of the present invention; and FIGURE 8 is a graph showing the far field pattern of a semiconductor laser array of the conventional gain guide type. DESCRIPTION OF THE PREFERRED EMBODIMENTS The semiconductor laser array of the present invention includes an n-GaAs substrate 1, and an n-Ga 0.6 Al 0.4 As cladding layer 2 formed on the n-GaAs substrate 1. A p-Ga 0.9 Al 0.1 As active layer 3 is formed on the n-Ga 0.6 Al 0.4 As cladding layer 2, and a p-Ga 0.6 Al 0.4 As cladding layer 4 is formed on the p-Ga 0.9 Al 0.1 As active layer 3. Stripe-shaped thick portions 4a, each having a width of, for example, 3 µm, are formed in the p-Ga 0.6 Al 0.4 As cladding layer 4 with a distance of, for example, 7 µm. On the thick portions 4a, a p-GaAs light absorption layer 5, a p-Ga 0.6 Al 0.4 As cladding layer 6, and a p-GaAs cap layer 7 are formed. An n-Ga 0.5 Al 0.5 As buried layer 9 is formed on the p-Ga 0.6 Al 0.4 As cladding layer 4 at the positions where the thick portions 4a are not formed, in a manner that the top surface of the n-Ga 0.5 Al 0.5 As buried layer 9 substantially has the same height as the top surface of the p-GaAs cap layer 7. An oxide film 10 is formed on the top surface of the n-Ga 0.5 Al 0.5 As buried layer 9. A Cr/Au electrode 11 is commonly formed on the p-GaAs cap layer 7 and the oxide film 10. An AuGe/Ni electrode 12 is formed on the bottom surface of the n-GaAs substrate 1. The n-Ga 0.6 Al 0.4 As cladding layer 2, p-Ga 0.9 Al 0.1 As active layer 3, p-Ga 0.6 Al 0.4 As cladding layer 4, p-GaAs light absorption layer 5, p-Ga 0.6 Al 0.4 As cladding layer 6, and p-GaAs cap layer 7 form, in combination, stripe-shaped stimulated regions 13. The p-GaAs light absorption layer 5 and the p-Ga 0.6 Al 0.4 As cladding layer 6 in each stripe-shaped stimulated region 13 have the greater refractive index than the n-Ga 0.5 Al 0.5 As buried layer 9, thereby forming the semiconductor laser of the index guide type. Each of the stripe-shaped stimulated regions 13 includes the p-GaAs light absorption layer 5 and, therefore, the optical loss in the stripe-shaped stimulated regions 13 is greater than that in the n-Ga 0.5 Al 0.5 As buried layer 9. With this structure, the optical loss in the n-Ga 0.5 Al 0.5 As buried layer 9 is small as compared with the optical loss in the stripe-shaped stimulated regions 13 and, therefore, the laser beams generated from each of the stripe-shaped stimulated regions 13 are coupled to each other with no phase difference in a stable operational mode. Manufacturing steps of the semiconductor laser array of FIGURE 1 will be described with reference to FIGURES 2, 3, 4 and 5. The n-Ga 0.6 Al 0.4 As cladding layer 2 of 1 µm thick, the p-Ga 0.9 Al 0.1 As active layer 3 of 0.1 µm thick, the p-Ga 0.6 Al 0.4 As cladding layer 4 of 0.3 µm thick, the p-GaAs light absorption layer 5 of 0.05 µm thick, the p-Ga 0.6 Al 0.4 As cladding layer 6 of 0.7 µm thick, and the p-GaAs cap layer 7 of 0.3 µm thick are sequentially formed on the n-GaAs substrate 1 through the use of the liquid-phase epitaxial growth method as shown in FIGURE 2. Then, stripe-shaped resists 8 are formed on the p-GaAs cap layer 7 through the use of the photolithography technique. The thus formed resists 8 function as the masks in the following etching operation. The p-GaAs cap layer 7 and the p-Ga 0.6 Al 0.4 As cladding layer 6 are removed by the etching method at the position where the stripe-shaped resists 8 are not formed, as shown in FIGURE 3. The etching operation first uses an etchant consisting of H₂SO₄, H₂O₂ and H₂O (H₂SO₄:H₂O₂:H₂O = 10:1:1) which is capable of etching both GaAs and GaAlAs evenly. The etching operation is conducted to the depth at least to reach the p-Ga 0.6 Al 0.4 As cladding layer 6. Thereafter, the etching operation is carried out through the use of hydrofluoric acid (HF), which is capable of selectively etching GaAlAs, to etch the remaining p-Ga 0.6 Al 0.4 As cladding layer 6. After completion of the etching operation, the stripe-shaped resists 8 are removed, and a meltback etching using unsaturated solution is carried out in a liquid-phase growth board. The p-GaAs light absorption layer 5 is removed at the positions where the p-Ga 0.6 Al 0.4 As cladding layer 6 is removed by the preceding etching operation. The meltback etching is carried out to the depth where the p-Ga 0.6 Al 0.4 As cladding layer 4 is slightly removed. Then, the n-Ga 0.5 Al 0.5 As buried layer 9 is formed on the semiconductor body as shown in FIGURE 4. In a preferred form, each of the stripe-shaped resists 8 has the width of 3 µm, and the stripe-shaped resists 8 are formed with a pitch of 7 µm. An etching operation is carried out to the depth at which the p-GaAs cap layer 7 appears as shown in FIGURE 5 through the use of hydrofluoric acid (HF) diluted by acetic acid. The native oxide 10 is formed on the n-Ga 0.5 Al 0.5 As buried layer 9 while the etching operation is conducted. Finally, the Cr/Au electrode 11 is formed on the p-GaAs cap layer 7 and the native oxide 10. Further, the AuGe/Ni electrode 12 is formed on the bottom surface of the n-GaAs substrate 1. FIGURE 6 shows the far field pattern when a semiconductor laser array of the above-mentioned structure and having seven (7) stripe-shaped stimulated regions 13 is driven at the threshold current of 210 mA, and the output power above 100 mW. The single peak far field pattern indicates a stable operation of the semiconductor laser array of the present invention. In the foregoing embodiment, the n-Ga 0.5 Al 0.5 As buried layer 9 functions to confine the electric current in the stripe-shaped stimulated regions 13. In order to increase the gain, a p-Ga 0.5 Al 0.5 As buried layer can be employed. In this case, the native oxide 10 functions to confine the electric current in the stripe-shaped stimilated regions 13. If the layers shown in FIGURE 2 are formed by, for example, the MBE method or the MO-CVD method, which ensures fine control of the layer thickness, instead of the liquid-phase epitaxial growth method, the index difference and the loss difference can be accurately controlled between the stripe-shaped stimulated regions 13, including the p-GaAs light absorption layer 5 and the p-Ga 0.6 Al 0.4 As cladding layer 6, and the n-Ga 0.5 Al 0.5 As buried layer 9. FIGURE 7 shows another embodiment of a semiconductor laser array of the present invention. Mesas 20, each having a predetermined width, are formed on an n-GaAs substrate 21 with a predetermined pitch. An n-Ga 0.7 Al 0.3 As cladding layer 22, a p-GaAs active layer 23, a p-Ga 0.7 Al 0.3 As cladding layer 24, and an n-GaAs cap layer 25 are sequentially formed on the n-GaAs substrate 21. A Zn diffusion is conducted to the portions corresponding to the mesas 20 to reach the p-Ga 0.7 Al 0.3 As cladding layer 24, thereby forming current paths 26. A first electrode 27 is formed on the n-GaAs cap layer 25, and a second electrode 28 is formed on the bottom surface of the n-GaAs substrate 21. The thickness of the p-GaAs active layer 23 varies depending on the provision of the mesas 20. More specifically, the thickness of the p-GaAs active layer 23 is maximum at the center of the mesa 20, and is minimum between the mesas 20. Accordingly, the stripe-shaped stimulated regions 13 of the index guide type are formed above the mesas 20. The n-Ga 0.7 Al 0.3 As cladding layer 22 is thin, for example, about 0.5 µm, at the center of the mesas 20 so as to increase the optical loss in the strip-shaped stimulated regions 13 by absorbing the laser beam by the n-GaAs substrate 21 via the mesas 20. The semiconductor laser array of FIGURE 7 is manufactured in the following manner. The mesas 20 are formed on the n-GaAs substrate 21 through the use of the photolithography method and the chemical etching method. Each of the mesas 20 preferably has the width of about 2.5 µm, and the height of about 1 µm. The n-Ga 0.7 Al 0.3 As cladding layer 22 is formed on the n-GaAs substrate 21 by the liquid-phase epitaxial growth method. The n-Ga 0.7 Al 0.3 As cladding layer 22 has the thickness of about 0.5 µm at the center of the mesas 20. Then, the p-GaAs active layer 23 is formed on the n-Ga 0.7 Al 0.3 As cladding layer 22 by the liquid-phase epitaxial growth method. The p-GaAs active layer 23 has a thickness of about 0.12 µm at the center of the mesas 29. The cladding layer 24 having a thickness of about 1 µm, and the n-GaAs cap layer 25 having a thickness of about 0.5 µm are sequentially formed by the liquid-phase epitaxial growth method. Then, the Zn diffusion is conducted at the positions corresponding to the mesas 20 so that the Zn diffusion reaches the cladding layer 24, thereby forming the current paths 26. Finally, the electrode 27 is formed on the n-GaAs cap layer 25, and the electrode 28 is formed on the bottom surface of the n-GaAs substrate 21. The present invention is applicable to an InGaAsP semiconductor laser or an InGaAlP semiconductor laser in addition to the GaAlAs semiconductor laser.

Claims: An index-guided semiconductor laser array, comprising: a semiconductor substrate (1); a multi-layer structure (2-7, 9, 10) on the substrate (1), including an active layer (3), and first and second cladding layers (2, 4); and electrode layers (11, 12) for supplying stimulating current for causing laser generation in the active layer; said structure being formed with a plurality of buried layer regions (9) for confining the stimulating current which, in use, flows into the active layer, through a respective plurality of stripe-shaped parallel stimulated regions (13) in said structure, said stimulated regions having a greater refractive index than the buried layer regions lying between them; said stimulated regions each including a respective light absorption layer (5) producing greater light loss in said stimulated regions than in said buried layer regions, so as to produce phase coupling of the laser beams generated from each said stimulated region. An index-guided semiconductor laser array according to claim 1, wherein said stimulated regions are formed on the second cladding layer (4) remote from the substrate, and each include: a third cladding layer (6) formed on the respective said light absorption layer (5); and a cap layer (7) formed on said third cladding layer (6); and wherein said buried layer regions each comprise a respective buried layer (9) which is disposed between two adjacent said stimulated regions (13), and on which is formed a respective oxide film (10); said electrode layers comprising a first electrode layer (11) formed commonly on said plurality of stripe-shaped stimulated regions and said plurality of oxide films; and a second electrode layer (12) formed on the side of said semiconductor substrate (1) remote from said multi-layer structure. An index-guided semiconductor laser array according to claim 2, wherein said semiconductor substrate (1) is an n-GaAs substrate; said first cladding layer (2) is an n-Ga 0.6 Al 0.4 As cladding layer formed on said n-GaAs substrate; said active layer (3) is a p-Ga 0.9 Al 0.1 As active layer formed on said n-Ga 0.6 Al 0.4 As cladding layer; said second cladding layer (4) is a p-Ga 0.6 Al 0.4 As cladding layer formed on said p-Ga 0.9 Al 0.1 As active layer; each said light absorption layer (5) is a p-GaAs light absorption layer formed on said p-Ga 0.6 Al 0.4 As cladding layer; each said third cladding layer (6) is a p-Ga 0.6 Al 0.4 As cladding layer formed on a said p-GaAs light absorption layer; each said cap layer (7) is a p-GaAs cap layer formed on a said p-Ga 0.6 Al 0.4 As cladding layer; and each said buried layer (9) is an n-Ga 0.5 Al 0.5 As buried layer. An index-guided semiconductor laser array, comprising a semiconductor substrate (21) formed with a plurality of parallel stripe-shaped mesas (20); a multi-layer structure (22 - 26) on the substrate, including an active layer (23) and first and second cladding layers (22, 24); and electrode layers (27, 28) for supplying stimulating current for causing laser generation in the active layer (23); said structure being formed with a plurality of current paths (26) over said mesas for confining the stimulating current which, in use, flows into the active layer, through a respective plurality of stripe-shaped parallel stimulated regions (13) formed in the structure over the respective mesas; the first cladding layer (22) on the substrate side of the active layer having relatively thin portions at the positions of the mesas (20), and relatively thick portions between said mesas, said relatively thin portions producing greater light loss in said stimulated regions (13) than in the intermediate regions lying between them, so as to produce phase coupling of the laser beams generated from each said stimulated region. An index-guided semiconductor laser array according to claim 4 wherein said first cladding layer (22) is formed on said semiconductor substrate (21), said active layer (23) is formed on said first cladding layer, said second cladding layer (24) is formed on said active layer, a cap layer (25) is formed on said second cladding layer, a first said electrode layer (27) is formed on said cap layer, a second said electrode layer (28) is formed on the side of the semiconductor substrate remote from said multi-layer structure, and said current paths (26) extend from said first electrode layer through the cap layer (25) to reach the second cladding layer (24). An index-guided semiconductor laser array according to claim 5 wherein: said semiconductor substrate (21) is an n-GaAs substrate; said first cladding layer (22) is an n-Ga 0.7 Al 0.3 As cladding layer formed on said n-GaAs substrate; said active layer (23) is a p-GaAs active layer formed on said n-Ga 0.7 Al 0.3 As cladding layer; said second cladding layer (24) is a p-Ga 0.7 Al 0.3 As cladding layer formed on said p-GaAs active layer; said cap layer (25) is an n-GaAs cap layer formed on said p-Ga 0.7 Al 0.3 As cladding layer; and said current paths (26) are Zn diffusion regions in said n-GaAs cap layer, to reach the p-Ga 0.7 Al 0.3 As cladding layer. An index-guided semiconductor laser array according to any of claims 4 to 6 wherein said active layer (23) is of varying thickness, the thickness being maximum at the center of the mesas (20) and being minimum between the mesas.

Inventors: HAYAKAWA, TOSHIRO, SUYAMA, TAKAHIRO, YAMAMOTO, SABURO
Applicants: SHARP KABUSHIKI KAISHA
Application year: 1985
Main classification: H01S3
IPC codes: H01S5