GROWTH OF LATTICE-GRADED EPILAYERS

Abstract: A method for growing an epitaxial layer (77) composed of semiconductor material belonging to the cubic crystal system on a substrate (71), where the lattice constant of the epitaxial layer is graded from an initial lattice constant adjacent to the substrate (71) to a final lattice constant on the surface of the epitaxial layer (77). Growth surfaces (79) are formed on the substrate, and the epitaxial layer (77) is grown as its lattice constant changes from the initial lattice constant to the final lattice constant.

Description: GROWTH OF LATTICE-GRADED EPILΛYERS The present invention relates to a method of ' -growing epitaxial layers ("epilayers") of semiconductor materials belonging to the cubic crystal system which are graded in lattice constant ("lattice-graded") from an initial value of lattice constant adjacent to the substrate on which they have been grown to final value of lattice constant on the epilayer surface. It can be used, for example, to grow lattice-graded epilayers Dn crystalline substrates in the manufacture of solar cells, optical devices, and integrated circuits. . *■ In a crystal, the atoms are arranged in a three-dim¬ ensional array known as the lattice. In the lattice, a unit cell can be specified which repeats itself in three dimensions to generate the lattice. A unit cell contains complete information regarding the arrangement of atoms in a lattice, and can be used to describe the crystal system. Crystals can be classified into seven crystal systems, one of which is the cubic crystal system. In general, three vectors are required to specify a unit cell. In the cubic crystal system, these three vec¬ tors are mutually orthogonal and have the same magnitudes. Therefore, a unit cell in the cubic crystal system can be specified by a single scalar quantity, its lattice con¬ stant. In the cubic crystal system, the lattice constant is the length of an edge of the cube containing the unit cell. The present invention is concerned solely with epilay- ers composed of semiconductor materials belonging to the cubic crystal system. Materials of such a nature include silicon, germanium, gallium arsenide, and indium phosphide, for example. * -Semiconductors which incorporate expensive constituent often possess properties of interest. However, the high cost of substrates of these materials is an impediment to their_use. If good quality epilayers of such materials , could be grown " on less expensive substrates, then the result ing structures λvould find applications. Available substrate " of good crystalline quality which are inexpensive are often sufficiently different in lattice constant from the epilay- er materials of interest that good quality epilayers cannot be grown on them. No general method is known for growing good quality epilayers on substrates which are mismatched in lattice constant ("lattice-mismatched") to the epilayers. Solar photovoltaic cells of high efficiency for the con version of sunlight to electricity are required for utility applications. If good quality epilayers which were graded in direct energy bandgap values over a sufficiently λvide range were available, they could form part of a solar cell of sufficient efficiency for utility applications. However, if it is necessary to utilize only materials which are match ed in lattice constant ("lattice-matched"), then it has not yet been possible to obtain an epilayer graded in energy bandgap values ("bandgap-graded") over, a wide enough range for. a solar cell of sufficient efficiency to be possible. It is an object of the present invention to provide a method for growing ' lattice-graded epilayers. It is an additional object of the present invention to provide a method for growing bandgap-graded epilayers. It is a further object of the present invention to pro¬ vide a method for growing epilayers on lattice-mismatched substrates. Briefly, in accordance with the principles of my inven- tion and in the preferred embodiment thereof, a lattice-grad ed epilayer is to be grown on a crystalline substrate. Growth surfaces are formed on the substrate. The epilayer will be grown on the growth surfaces. In the preferred em¬ bodiment, each growth surface conforms to a portion of a spherical surface of radius Rs. The growth surfaces are separated by a dielectric coating layer on which nucleation of the epilayer material is not a favored process. Techni¬ ques well known in the art can be used to form the growth surfaces and the coating layer. For example, photolithogra¬ phic, etching, machining, " casting, recrystallizing, oxidiz- ing, or nitriding processes can be used to form the growth v surfaces and the coating layer. Convex growth surfaces are used if the lattice constant is to be increased during epilayer growth, and concave growth surfaces are used if the lattice constant is to be decreased during epilayer growth. After the growth surfaces have been formed, an epilayer can be grown on them, starting with an initial lattice con¬ stant and ending with a final . lattice constant differing from the initial lattice constant. In the preferred embodiment, this change in lattice cor_-.stant results from a change in the material composition of the epilayer during its growth. • Techniques for growing an epilayer while changing its mater¬ ial composition are well known in the art, e.g. , chemical vapor deposition ("CVD") can be used, and the composition of the vapor supplying the materials for epilayer growth can bo changed during the epilayer growth process. Preferably, the crystallographic orientation of the substrate and the magnitude of R are selected such that a s relatively constant growth rate over the epilayer surface π-- suits, so that the epilayer surface during its growth contin¬ ues to conform to portions of spherical surfaces having a common center with the growth surfaces of the substrate. If the lattice constant is to be changed as epilayer growth proceeds, then the ratio of the lattice constant O- of the material on the surface of the epilayer at a first point in time when this surface has a radius R_ to the lat¬ tice constant >/ of the material on the surface of the epilayer at a later point in time when this latter surface has a radius 2 should be greater than or equal t R-/R 9 if o< _. 2 - and - should be less than or equal to R /R 9 if c* -, " <_- * -<,2• When these relationships are obeyed, then the epilayer will be grown with minimum strain for a given R . * These relationships can be used to calculate the ' minimum epilayer thickness required to grow the epilayer with mini mum strain. This minimum epilayer thickness must be large enough so that the strains produced in the epilayer as a result of the change in lattice constant do not exceed the elastic limit, either In compressive strain or in 'tensile strain, of the epilayer material. In a particular.example, concave growth surfaces can be formed on the surface of a gallium antimonide substrate with an Rs equal to 100 micrometers and a maximum circular diameter on the substrate of 50 micrometers. A preferred crystallographic orientation of the substrate is the (100)- orientation. * A lattice-graded epilayer with a thickness of 9.65 micrometers can be grown on the substrate using com- pounds from the (Ga)(Sb,Λs,P) family of ternary compounds, starting-with a lattice constant of 6.096 Angstroms and ending with a lattice constant of 5.560 Angstroms (GaAs ^ ^ P 4r ). Such an epilayer will have a direct energy bandgap graded from 0.7 eV at the substrate to 2.0 eV at its surfac If the substrate is composed of n-type material, and the ep layer is composed of p-type material, then the epilayer and the substrate could form part of a solar cell with a theor¬ etical efficiency of 45% at one thousand suns concentration (Borrego, J. M. , Ghandi, S. K. , and Page, D. Λ. , A High Efficiency Bulk Graded Band Gap/PW Junction Solar Cell Structure At High Concentration Ratios, 17th IEEE Photo¬ voltaic Specialists Conference, 1984). In a lattice-graded epilayer, the lattice constant is a function of the epilayer composition and state of strain * at a point. If the strain exceeds the elastic limit, eithe in compressive strain or in tensile strain, defects may ap¬ pear in the epilayer which are detrimental to crystal qual- ity and which have an adverse effect in applications of the epilayer. The present invention provides a method whereby the stresses arising due to a change in the lattice constant of the epilayer can be reduced. If a first element of area dA- lies on the surface of the r owing epilayer at a first point in time T = T_, , where the lattice constant of the epilayer surface enclosed by dΛ_. is ry£ « , there is a correlated second element of area dA which lies on.the surface of the epilayer at a second and later point in time T = T , where the lattice constant of the epilayer surface enclosed by dA 9 is.- „. The correla¬ tion between dA.. and dA is such that as T increases from T.. to T 9 and epilayer growth proceeds, epitaxial material will grow from dA- and the surface of this epitaxial material will coincide with dA 2 at T = T 2 - In order to reduce the stresses and strains in the epilayer which result from changes in the lattice constant of the epilayer between T = T- and T = T ? , dA 9 must differ from dA . If the lattice • constant is being decreased, then the ratio of dA.-. to dA 2 must be greater than unity, and if the lattice constant is being increased, the the ratio of dA_, to dA 2 must be less than unity. That is, if _->^ is greater t anc>( „, then dA /dA„ is greater than unity, and if c ^^ is less thane* / , dA- j /dA-. is less than unity. For minimum stress and strain during epilayer growth, the change in the magnitude of dA 2 with respect to dA- must correspond to the dilation or contraction of the unit cells of the lattice of the epilayer crystal, i.e. , must corres- pond to the decrease or the increase of the lattice constant, where the substrate growth surfaces are formed and the lattice constant is changed during epilayer growth in such a manner that strains exceeding the elastic limit, either in compressive strain or tensile strain, do not occur. Prefer- ably, exceeds &tr, , whereas dΛ-_/clΛ 2 ≤ ( han c^. In the preferred embodiment of the present invention previously discussed, the substrate growth surfaces and the surfaces of the growing epilayer conform to spherical sur¬ faces having common centers, and dA 2 is the radial projec- tion of dA- onto the surface of the epilayer at T„. ' If R- and R„ are the radii of the surfaces on which dA-, and dA 9 , respectively, lie, then dA_-/dΛ 2 = (R-ZE , and if c * is larger than σ , then R-, R 2 ^^/cK o ' whereas if O- ^ i larger than o<- , then R_./R 2 ^-o -^ o .^ - l . The above relationships describe criteria which result in epilayer growth with minimum strain in the epilayer for a given epilayer thickness. However, for the type of mater ials used to grow epilayers in the present invention, it is often true that materials with larger lattice constants have larger coefficients of thermal expansion. When such is the case for materials incorporated in an epilayer grown under minimum strain conditions, then strains may develop i the epilayer when it is cooled down from the elevated temp¬ eratures typically encountered during growth of the mater- ials. If the epilayers are grown with thicknesses somewhat less than those required for minimum strain during growth, then the strains introduced into the epilayer on cooling from growth temperatures will partially or totally relieve strains introduced into the epilayer during its growth. Su a reduction in epilayer thickness must not be done in such ;\ manner, however, ' that the elastic limits of the epilayer ar exceeded during growth, either in compressive strain or in tensile strain. In this regard, it is generally true thai materials of the type used to grow epilayers in the present invention have greater ability to withstand a strain of a given magnitude when it is a compressive rather than a ten¬ sile strain. Further objects, features, and advantages of my inven¬ tion will become apparent upon consideration of the follow- ing detailed description in conjunction with the drawing, i which: FIG. 1 is a cross-sectional view of a concave growth surface on a portion of a substrate on which a lattice-grad ed epilayer has been grown; FIG. 2 is a view in perspective of an element of vol¬ ume of the epilayer shown in FIG. 1; FIG. 3 is a cross-sectional. view of a convex growth su face on a portion of a substrate on which a lattice-graded epilayer has been grown. FIG. 4 is a view in perspective of an element of volum of the epilayer shown in FIG. 3; . ■ FIG. 5 is a view in perspective of a three-dimensional surface representing the relationships between material com positions, lattice constants, and direct energy bandgap val ues for the ( In,Ga) (As,P) family of quaternary compounds; and FIG. 6 is a cross-sectional view of a portion of a sub strate on which an epilayer has been grown, where the sub¬ strate is lattice-mismatched to the epilayer. In FIG. 1, a .cross-sectional view is shown of substrat 21 on which a concave growth surface 11 has been formed. Th concave growth surface conforms to a pαrtion of a spherical surface of radius 17 and center 19. A lattice-graded epi¬ layer 13 has been grown on the concave growth surface, star ing with an initial lattice constant (X. adjacent to the su strate, and ending with a final lattice constant c ^ 2 , where & exceeds o . The crystallographic orientation of the substrate has been selected to give a fairly constant epi¬ layer growth rate, so that the epilayer thickness is rela¬ tively constant. As a result, surface 9 of the epilayer conforms to a portion of a spherical surface having a radiu 15 and center 19. Radius 15 and radius 17 are not shown to scale in FIG. 1. The lattice constant of the epilayer 13 has been grade in such a manner that the ratio of radius 17 to radius 15 is equal to or greater than the ratio of Cx to-X-. 9 - In FIG. 2, a view in perspective is shown of an elemen of volume 23 of epilayer 13 (shown in FIG. 1). Element of volume 23 has a surface composed of elements of area 25, 27 29, 31, 33, and 35. Element of area 27 lies adjacent to the concave growth surface 11 (shown in FIG. 1), and element of area 25 is the radial projection of element of area 27 onto surface 9 (shown in FIG. 1). Elements of area 29, 31, 33, and 35 can be swept out by radius 17 (shown in FIG. 1) tracing the sides of elements of area 25 and 27. The raxio of the- magnitude of element of area 25 to the magnitude of element of area 27 is equal to the square of the ratio of radius 15 (shown in FIG. 1 ) to radius T7. In FIG. 3, a cross-sectional view is shown of a portion of a substrate 49 on which a convex growth surface 41 has been formed. The convex growth surface conforms to a por¬ tion of a spherical surface of radius 45 and center 37. A lattice-graded epilayer 43 has been grown on the convex growth surface, starting with an initial lattice constant ^ , adjacent to the substrate, and ending with a final lat¬ tice constant ι>~ , where <5 " \ . exceeds o<^ ., • The crystallo- * graphic orientation of the substrate has been selected to give a relatively constant . epilayer growth rate, so the thickness of the epilayer is relatively constant. As a re¬ sult, the surface 39 of the epilayer conforms to a portion of a spherical surface of radius 47 and center 37. The lattice constant of the epilayer 43 has been graded in such a manner that the ratio of radius 47 to radius 45 is equal to or greater than the ratio of o * to ■. -.- In FIG. 4, a view in perspective is shown of elemonI * , of volume 53 of epilayer 43 (shown in FIG. 3). Element of vol¬ ume 53 has a surface composed of elements of area 55, 57, f.'", 61, 63, and 65. Element of area 57 lies adjacent to the con- vex growth surface 41 (shown in FIG. 3), and element of area 55 is the radial projection of element of area 57 onto sur¬ face 39 (shown in FIG. 3). Elements of area 59, 61, 63, and 65 can be swept out by radius 47 (shown in FIG. 3) tracing the sides of elements of area 55 and 57. The ratio of the magnitude of element of area 55 to the magnitude of element of area 57 is equal to the square of the ratio of radius 47 to radius 45 (shown in FIG. 3). . In FIG. 5, a view in perspective is shown of a three- dimensional surface 69 λvhich represents the relationships between material compositions, lattice constants, and dir¬ ect energy bandgap values of the (In,Ga) (As,P) family of quaternary semiconductor compounds. Using compounds from this family, lattice constants can be graded in the range 6.058 Angstroms (InAs) to 5.560 Angstroms (GaΛs _ P ) while grading the direct energy bandgap values from 0.3G ' eV to 2.0 eV. .... - ' In FIG. 6, a cross-sectional view is shown of a portio of substrate 71. A coating layer 81 has been formed on the substrate except for growth surfaces 75. Each of the growt surfaces is isolated from all other of the growth surfaces. The coating layer may be formed using techniques well known in the art, e.g. , photolithographic techniques and oxidizin or nitriding processes can be used for this purpose. Prefer ably, each of the growth surfaces has an area less than 500 square micrometers and is approximately circular in shape in order to minimize the number of defects in epilayer 77. The epilayer is initially grown over the substrate growth surfaces, and is then laterally grown over the surface 79 of the coating layer until a continuous epilayer is obtained on the substrate. Preferably, the surface of the coating layer is such that nucleation of the epilayer material on it is not a favored process. In a particular case, the substrate is a silicon substrate, and the epilayer is composed of gallium arsenide. The strain energy at an interface between a crystalli iι<> substrate and an epilayer crystal depends on the magnitude of the mismatch in lattice constant between them. For very thin epilayers where the difference in the strain-free lat¬ tice constants of the epilayer and the substrate is less than 10-15%, such strain may not give rise to defects in the epilayer. If the epilayer is not very thin or if the mismatch in lattice constants is too great, defects will appear in the epilayer. There is a critical epilayer thick¬ ness beyond which defects will appear [Jesser, W. P. and Kuhlmann-Wilsdorf, D., Phys. Stat. Solidi, 19, 96 (1967). In the embodiment of the present invention shown in FIG. 6, each of the isolated growth surfaces has a small area. As a result of the isolation and small area, the " 5 stresses arising in the epilayer initially growing over each of the growth surfaces are ' isolated and limited in magnitude. The strains in the epilayer during such initial growth do not lead to defects as long as the epilayer is sufficiently thin and the difference in the strain-πfree 10. lattice constants of the epilayer and the substrate are not too great. As epilayer growth proceeds, the lattice con¬ stant of the epilayer can change due to the isolation of each area of initial growth. That is, each first element of area on the surface of the growing epilayer at a first 15 point in time T = T-.;can be greater or lesser in magnitude than its correlated second element of area lying on the sur¬ face of the epilayer at a second point in time T = , where T„ occurs after T , depending on whether the lattice con¬ stant of the epilayer surface enclosed by dA- is greater 20 or lesser in magnitude, respectively, than the lattice con¬ stant on the epilayer surface enclosed by dA„. In a particular case, the growth surfaces may be cir¬ cular in shape and have a diameter of ten micrometers, and be formed in a pattern over the substrate surface with a 25 center-to-center spacing of growth surfaces of fifteen micrometers. Although the invention has been described with refer¬ ence to particular embodiments, it is to be understood that these embodiments are merely illustrative of the application 30 of the principles of my invention. Numerous modifications may be made and other arrangements may be devised without departing from the spirit and scope of the invention. 35

Claims: - CLAIMS 1. A method of growing an epitaxial layer composed of semiconductor material belonging to the cubic crystal system on a substrate with the lattice constant of said epitaxial 5 layer changing from an initial lattice constant adjacent to said substrate to a final lattice constant on the surface of said epitaxial layer when the growth is completed, comprisin the steps of forming a plurality of growth surfaces on said substrate; growing an epitaxial layer on said growth surface 10 and controlling the lattice constant of said epitaxial layer to change from said initial lattice constant to said final lattice constant; said growth surfaces and the. controlled changes in lattice constant being such that for each first element of area on the surface of said epitaxial layer havin 15 a first lattice constant at a first point in time during growth of said epitaxial layer there is a correlated second element of area on the surface of said epitaxial layer havin a second lattice constant at a second point in time during growth of said epitaxial layer, said second point in time 20 occurring after said first point in time, with the ratio of each first element of area to its correlated second element of area being less than unity if said first lattice constant is lesser than said second lattice constant, and being great er than unity if said first lattice constant is greater than 25 said second lattice constant; and controlling the correlatio between each first element of area and its correlated second element of area such that as growth of said epitaxial layer proceeds, the portion of said epitaxial layer growing from said first element of area has a surface which coincides wit 30 said correlated second element of area at said second point 12 in time . 2. A method of growing an epitaxial layer in accord¬ ance with claim 1 wherein a coating layer is formed on the ..surface of said substrate except for said plurality of growth surfaces, each of said growth surfaces having an area less than five hundred square micrometers in magnitude. 3._ A method of growing an epitaxial layer in accord¬ ance with claim 1 wherein each of said plurality of growth —surfaces is made to have a concave surface, and sai'd final lattice constant is controlled to be lesser than said initial lattice constant. 4. A method of growing an epitaxial layer in accord¬ ance with claim 3 wherein said concave surface conforms to a portion of a spherical surface. 5. A method of growing an epitaxial layer in accord¬ ance with claim 1 wherein each of said plurality of growth • sur aces is made to have a convex surface, and said final lattice constant is controlled to be -greater than said initial ' lattice constant. ^ » 6. A method of growing an epitaxial layer in accord¬ ance with claim 5 wherein said convex surface conforms to a portion of a spherical surface. 7. A method of growing an epitaxial layer in accord¬ ance with claim 1 wherein said ratio of each first element of area to its correlated second element of area has a ratio magnitude, said ratio magnitude being not greater than the square of the ratio of said first lattice constant to said second lattice constant if said first lattice constant is less than said second lattice constant, and being not less than the square of the ratio of said first lattice constant to said second lattice constant if said first lattice con¬ stant is greater than said second lattice constant. 8. A method of growing an epitaxial layer in accord¬ ance with claim 7 wherein a coating layer is formed on the surface of said substrate except for said plurality of growth surfaces, each of said growth surfaces having an area less than five hundred square micrometers in magnitude. 9. A method of growing an epitaxial layer in accord¬ ance with claim 7 wherein each of said plurality of ' growth surfaces is made to have a concave surface, and said final lattice constant is controlled to be lesser than said ini¬ tial lattice constant. 10, A method of growing an epitaxial layer in accord¬ ance with claim 9 wherein said concave surface conforms to a portion of a spherical surface. .. 11. A method of growing an epitaxial layer in accord- ance with claim 7 wherein each of said plurality of growth surfaces is made to have a convex surface, and said final lattice constant is controlled to be greater than said ini¬ tial lattice constant. 12. A method of growing an epitaxial layer in accord¬ ance with claim 11 wherein said convex surface conforms to a portion of a spherical surface.

Inventors: COOK MELVIN S, COOK, MELVIN, S.
Applicants: COOK MELVIN S, COOK, MELVIN, S.
Application year: 1985
Main classification: H01L21
IPC codes: C30B25, H01L21, H01L31