PROCESS FOR ACTIVATING A SUBSTRATE FOR ELECTROLESS DEPOSITION OF A CONDUCTIVE METAL

Abstract: A substrate is activated by providing a first resist thereon; followed by a second resist on the first resist. The first and second resists differ in their solubility characteris­ tics. The resists are exposed to imaging radiation and developed. The substrate is seeded and the second resist layer is removed, thereby removing seeder, except from exposed areas of the substrate.

Description: PROCESS FOR ACTIVATING A SUBSTRATE FOR ELECTROLESS DEPOSITION OF A CONDUCTIVE METAL The present invention is concerned with the seeding of at least one major surface of a dielectric substrate to prepare the substrate for the electroless deposition of a conductive metal thereon. The present invention finds particular applicability for the manufacture of printed circuit cards and boards. In the manufacture of printed circuit cards and boards, a dielectric sheet material is employed as the substrate. A conductive circuit pattern is provided on one or both of the major surfaces of the substrate. A conductive pattern can be formed on the surface of the substrate using a variety of known techniques. These known techniques include the subtractive technique where a layer of copper is etched to form the desired circuit pattern, the EDB (electroless direct bond) technique where copper is electrolessly plated directly on the surface of the substrate in the desired pattern, and the peel-apart technique where the desired circuit patters is plated up from a thin layer of peel-apart copper. If it is desired to use the EDB technique, it is necessary to plate directly on the surface of the substrate. Since the dielectric substrate is nonconductive, in order to plate on the substrate, the substrate must be seeded or catalyzed prior to the deposition of metal onto the substrate. The seeder, in addition to coating the substrate, also coats the walls of the holes or vias of the board In addition, in order to provide patterned metal surfaces on the substrate, a resist material is applied above the seeder The resist can be applied, for instance, by laminating a dry film of the resist to the surface. The layer of resist material is then selectively exposed to the desired pattern by a known technique, such as ultraviolet light, electron beam, or X-ray beam technique, followed b removal of the exposed portions in the case of positive-resist materials and unexposed portions in the case of negative-resist materials, by etching or dissolution in an appropriate liquid. Next, the surface is plated with a metal which is deposited-on those areas of the surface which are not protected by the patterned resist material. When an appropriate thickness of metal has been deposited, the resist may be removed, leaving behind a patterned metal conductive surface. Certain problems, however, can occur with the above procedure. In particular, the adhesion of the resist can degrade due to the presence of the seeder beneath the resist layer. This is especially significant for electroless plating processes which require relatively long residence time in the plating bath. Loss of adhesion of the resist to the substrate can result in improperly plated lines. For instance, defects such as nicks in the lines and plating voids occur sometimes. This, in turn, results in defective printed circuit boards which must be discarded. Moreover, seeder which might remain on unplated portions after the plating can result in decreasing the insulation resistance between adjacent conductive lines. The present invention provides for an improved process of activating at least one major surface of a dielectric substrate for subsequent plating. The object of the invention is achieved by a process according to claim 1. According to the present invention, the seeder is present only where plating is desired on the substrate. The process of the present invention thereby eliminates the problem of loss of resist adhesion due to the seeder beneath the resist. The present invention also reduces the problem of decreased insulation resistance. Procedures have been suggested for seeding only the vias, but not for seleetively seeding at least one major surface of the substrate. For instance, when seeding the holes or vias, the entire rest of the top surface is covered with a resist so that the seeder goes onto the walls in the vias and onto the top of the resist. Next, the resist is stripped away, thereby removing all of the seeder that is on the top surface of the board. In another technique, the seeding of the holes or vias is done while the top carrier layer of the peel-apart copper is still on the board. Therefore, the seeding material goes onto the carrier layer of the peel-apart, and when the carrier layer is removed, the only remaining seeder is in the through holes. Contrary to the above technique, the present invention provides seeder on predetermined areas of at least one major surface of the substrates and, if present, also in the holes or vias. According to the present invention, preselected portions of at least one major surface of the dielectric substrate are activated for subsequent electroless deposition of a conductive metal. The process includes providing a first resist layer onto a major surface of the substrate and a second resist layer onto the first resist layer The second resist has different solubility characteristics than those of the first resist. The first and second resists are exposed to imaging radiation in a predetermined pattern. Each of the first and second resists is developed. The resulting exposed portions of the substrate are then seeded. The second resist layer is removed from the structure while retaining the first resist layer. This results in removal of all seeder, except from the exposed areas of the substrate. Figures 1-9 schematically illustrate a sequence of steps suitable for carrying out the process of the present invention. The process of the present invention is applicable to treating or conditioning a wide variety of dielectric (non-conductor) substrates. Dielectric substrates described in the prior art, including thermoplastic and thermosetting resins and glass, may be treated in accordance with the present invention. Typical thermosetting polymeric materials include epoxy, phenolic based materials, and polyamides. The dielectric materials may be molded articles of the polymers containing fillers and/or reinforcing agents such as glass-filled epoxy or phenolic based materials. Examples of some phenolic type materials include copolymers of phenol, resorcinol, and cresol. Examples of some suitable thermoplastic polymeric materials include polyolefins such as polypropylene, polysulfones, polycarbonates, nitrile rubbers, and ABS polymers. Although the main purpose of the present invention is for seeding at least one of the major surfaces of the substrate, the plated through holes or vias and/or blind holes of the substrate, when present, can likewise be seeded. Prior to the initiation of the process of the present invention for treating the dielectric substrate, the holes, if present in the circuit board, are made and the dielectric with th holes is suitably cleaned and preconditioned. For instance, the preconditioning can include creation of active sites by physical means such as sand and/or vapor blasting and/or chemical methods such as solvent swelling. A typical solvent is N-methyl pyrrolidone. The substrate can also be pretreated with a sulfochromic acid-composition. A layer 2 of a first resist material is applied to the substrate 1 (see Figure 1). A second resist material 3 is applied onto the first resist layer 2 (see Figure 2). If desired, a composite of the first resist material and of the second resist material can be obtained and then the composite applied to the substrate 1. The second resist layer 3 has solubility characteristics which differ from solubility characteristics of the first layer 2. The differences in solubility characteristics make it possible, after development, to subsequently remove the second resist layer without removing the first layer. The first and second layers can be developable in the same development solvents as long as they have solubility characteristics for the stripping or removal thereof which differ from each other. The resists which can be employed according to the present invention include both positive and negative resists. The layers can both be positive or negative resists, or one layer can be positive while the other is negative. It is preferred that the layers both be positive or negative resists. Examples Or some photoresists employed according to the present invention include negative or photohardenable polymerizable comtositions of the type suggested in U.S. Patents 3,469,982; 3,526t504; 3,867,153; and 3,448,098; and published European Patent Application 0049504. Polymers from methylmethacrylate and from glycdyl acrylate andfor from a polyacrylate such as trimethylol propane triacrylate and pentaerythitol triacrylate are commercially available from E.I. du Pont de Nemours and Company under the trade designation "Riston#. Examples of some negative photoresists employed according to the present invention are from polymethyl methacrylates such as those commercially available from E.I. du Pont de Nemours and Company under the trade designations 11Riston T-168" and "Riston 3515". T-168 is a negative photoresist material from polymethylmethacrylate and crosslinkable monomeric units such as from trimethylol propane triacrylate. A detailed discussion of preparing a negative resist from polymethylmethacrylate, trimethylol propane triacrylate and trimethylene glycol diacetate can be found in Example 1 of U.S. Patent 3,867,153. Riston 3515 is a negative photoresist material which is developable in an aqueous medium. Examples of aqueous developable negative photoresists are described in published European Patent Application 0049504 such as Example 23 thereof. A typical resist described therein is from a copolymer of methylmethacrylate, ethyl acrylate, and acrylic acid; and a copolymer of styrene and maleic anhydride isobutyl ester. An example of another type of photoresist is based on phenol formaldehyde novolak polymers. A particular example of such is Shipley AZ1350 which is an m-cresol formaldehyde novolak polymer composition. Such is a positive resist co#posItion and includes therein, diazoketone, such as 2-diazo-l-naphthol-5-sulphonic acid ester. In such a composition, the orthodiazoketone, during the photochemical reaction, is converted to a carboxylic acid. This, in turn, converts a neutral-organic soluble molecule (the phenolic polymer) to one that is readily soluble in weakly alkali aqueous developer solvents. The composition usually contains about 15 % or so, by weight, of the diazoketone compound. The first resist layer is generally applied in thicknesses of at least the desired thickness of the subsequently plated metal and usually about 0.005 mm greater than the subsequently to be plated metal. Typical thicknesses of the first layer are about 0.025 to about 0.102 mm and preferably about Q.0 to 0.Q64 mm. The second resist layer is usually about 0.0064 to about 0.038 mm thick, and is preferably about 0.013 to about 0.025 mm thick. The maximum thickness of the second photoresist layer is merely dictated by the optical density of the second layer and must be thin enough to permit the imaging radiation such as actinic light to penetrate the first and bottom layer 2. The resists can be applied, for instance, by lamination such as a hot roll lamination at temperatures of about 900C to about 1200C and preferably about 1100C; 4 and pressures of about 3.43 x 10 Pa to about 20.58 x 1Q4 Pa and preferably about 6.86 x 10 Pa 20,58 x 10' to 10.29 x 10 Pa. Each layer of resist material is then selectively exposed to the desired#pattern and imaged by a known technique such as ultraviolet light, electron beam, or X-ray beam technique, followed by removal of the exposed portions in the case of positive resist materials by etching or dissolution in an appropriate liquid. In the case of negative resist materials, the unexposed portions are removed. In addition, it is contemplated that the first resist layer is applied and imaged and also, if desired, developed prior to applying the second resist layer. Figure 3 illustrates providing a mask 4 to expose the resist layers 2 and 3 to the desired pattern. In this example the resist layers 2 and 3 are negative resists and the portions of layers 2 and 3 lying under the opaque portion 7 of the mask are not exposed to the imaging radiation. After development of the resist layers (see Figures 4 and 5), seeder or catalyst composition 5 is applied to the entire structure, including the exposed portions of the substrate (see Figure 6). When the second resist layer is an aqueous developable resist such as Riston 3515, it can be developed with an aqueous sodium carbonate solution of the type suggested in Published European Patent Application 0049504. When the first resist layer is Riston T-168, it can be developed employing 1,1,1 trichloroethane. Methods for seeding are well-known. For instance, among the more widely emploved procedures for catalyzing a substrate is the use of a stannous chloride sensitizing solution and a palladium chloride activator to form a layer of metallic palladium particles. For instance, one method for catalyzing a dielectric substrate is exemplified by U.S. Patent 3,011,920 which includes sensitizing the substrate by treating it with a solution of a colloidal metal, accelerating the treatment with a selective solvent to remove protective colloids for the sensitized dielectric substrate, and then electrolessly depositing a metal coating on the sensitized substrate, for example, with copper from a solution of a copper salt and a reducing agent. Also, as suggested for example, in U.S. Patent 3,099,608, a dielectric substrate can be pretreated by depositing a thin film of a Zconductivator" type of metal particle such as palladium metal from a semicolloidal solution onto the dielectric substrate to provide a conducting base which permits electroplating with conductive metal on the conductivated base. Moreover, U.S. Patent 3,632,388 suggests a method for treating a polymeric plastic substrate in a plating process which utilizes a preliminary chromic acid etch followed by a one step activation in a tin-palladium hydrosol. More recently, U.S. Patent 4,066,809 discloses the use of a so-called "triple seeding" technique. This technique, preferred in U.S. Patent 4,066,809, includes contacting the surfaces of the dielectric material with an aqueous palladium chloride/stannous chloride/hydrochloric acid seeder bath. In the preferred aspect of the present invention, prior to the stannous chloride and palladium chloride treatment, the substrate is treated with an aqueous solution containing a multifunctional ionic polymer, as disclosed in British Patent 1,383,105. The polymer is a multi functional ionic material in that it must contain at least two active or available ionic functional moieties of the same polarity. The polymers are at least water-miscible and are preferably watersoluble or at least soluble in the water compositions employed in the present invention. The preferred ionic moieties are cationic moieties such as quaternary phosphonium and quaternary ammonium groups. Polymers containing at least two ionic moieties are commercially available and need not be described herein in any great detail. Examples of commercially available multi functional cationic polymers are Reten 210, Reten 220, and Reten 300, available from Hercules, description of which can be found in "Water-Soluble Polymers", Bulletin VC-482A, Hercules Incorporated, Wilmington, Delaware 19899. Reten 210 is in powder form and is a copolymer of acrylamide and betamethacryloxyethyl trimethylammonium methyl sulfate having a Brook field viscosity of a 1 % solution of 0.6 to 1.0 Pa¯s. Reten 220 is in powder form and is a copolymer of acrylamide and betamethacryloxyethyltrimethylammonium methyl sulfate having a Brook field viscosity of a 1 % solution of 0.8 to 1.2 Pa s. Reten 300 is a liquid and is a homopolymer of betamethacryloxyethyltrimethylammonium methyl sulfate having a Brook field viscosity of a 1 % solution of 0.3 to 0.7 Pays. The molecular weight of the Reten polymers are usually relatively high and vary from about 50,000 to about 1,000,000 or more. These high molecular weight poly- mers are solid products and their main chemical backbone structure is polyacrylamide. The cationic Reten (positive charge) is obtained by attaching to the polyacrylamide various tetraalkyl ammonium compounds. These quaternary ammonium groups provide the number of positive charges of the polymer. In the preferred aspects of the present invention, the ionic polymer is employed as a dilute aqueous solution of about 0.01 to about 1 % by weight and preferably, about 0.05 to about 0.5 % by weight of the copolymer. The aqueous solution also usually contains an inorganic acid, such as HCI, to provide a pH of about 1 to about 7 and preferably a pH of about 2 to about 3. The use of a pH of about 2 to about 3 is preferred in order to obtain a relatively low viscosity for the polymer solution to facilitate application of the polymer. The viscosity drastically increases when the pH is above about 4 to 5. The acid is usually present in amounts of about 2 to about 10 % by weight. The treatment with the ionic polymer is generally about 1 to about 10 minutes and preferably about 1 to about 2 minutes. The multifunctional polymer provides a surface being of a polarity opposite from that associated with the catalyst particles to be subsequently applied to the substrate. This difference in polarity provides for electrostatic attraction of the catalyst particles. When a multifunctional polymer is employed, loss of adhesion by the photoresist is especially pronounced when the process of the present invention is not followed. After the substrate is contacted with the ionic polymer composition, the substrate is rinsed to remove any excess polymer not adsorbed by the substrate. Next, the substrate is activated by contact with a composition containing a catalytic composition capable of initiating the electroless plating process. The compounds contain a metal which can directly provide the catalytic sites or serves as a precursor which leads to the catalytic sites. The metal present may be in the elemental form, an alloy, or compound, or mixtures thereof. The preferred metal catalysts are precious metals such as gold, palladium, and platinum. In addition, in view of the improved conditioning of the substrate achieved by employing the multifunctional polymer, the catalyst can be a non-precious metal such as copper, nickel, cobalt, iron, zinc, manganese, and aluminum. The most preferred catalyst is palladium. A typical palladium composition contains about 1.2 to 2.5 g/l of a palladium salt which is preferably PdC12, about 80 to 150 g/l of a stannous salt which is preferably SnCl2#2H2O, and about 100 to 150 ml/l of an acid which is preferably HC1. When HC1 is provided in the form of a 37 % HC1 solution, about 290 to 360 ml of the HC1 solution is preferably employed. The most preferred composition contains about 1.5 g/l of Pdclqf about 100 g/l of SnCl2, and about 280 ml/l of 37 % HC1. The composition is usually maintained at a temperature of 18.3 + 12.20C. It is believed that the palladium particles in the solution have associated therewith a negative charge as the pendant charge extending outward therefrom. In particular, it is believed that the following occurs in the palladium chloride solution: EMI13.1 Accordingly, with a palladium stannous catalyst system, the ionic polymer is a cationic polymer (positively charged). A typical triple seeder process includes first contacting the dielectric substrate surfaces and the holes, if present, with a stannous chloride sensitizing solution (SnCl2/HCl). Typically, the contacting time is from 4 to 10 minutes with a preferred contact time of 7 minutes. Contacting the dielectric surface with this solution conditions the surfaces including the holes by depositing thereon a layer of Sn . The stannous chloride is then rinsed from the substrate and holes with water. A hot water rinse being in a temperature range from 550C to about 800C is preferred. The hot water removes any excess stannous chloride and also hydrolyzes the SnC12 on the surface to produce gelatinous tin hydrous oxides which are absorbed on the surface of the board as a stannous complex. The next seeding step includes contacting the dielectric substrate surfaces and the hole surfaces, if present, with a palladium chloride activator in which divalent palladium interacts with the stannous compounds on the board surface to form an adherent layer of metallic palladium particles thereon. This may be accomplished by immersing the dielectric in the palladium activator bath for 2 + 1 minute. This step promotes the adhesion of the final seeding step and increases the concentration of the final catalytic layer which is deposited in the final seeding step. The third step of the seeding process includes contacting the substrate surface and hole surfaces, if present, with a palladium chloride/stannous chloride/ hydrochloric acid seeder bath. While a preferred contact time of 5 minutes is desired, it has been found that the actual contact time can vary from 1 to 10 minutes and still provide satisfactory results. This step deposits the final catalytic layer which permits the additive metal, such as copper, to be placed electrolessly on the surface and in the holes of the dielectric substrate. In preparing the solution for the first step of the process, it is found that the combination of stannous chloride having a content of between 53 and 57 g/l of SnC12 2H2O with 37 % hydrochloric acid at a ratio of 50 ml/l with the pH of the solution adjusted to a range between 0.2 and 0.5, provides a desired preconditioning solution. The SnCl2#2H2O is dissolved in the HCl with the resulting mixture being added-to a tank of deionized water. It is generally found that the optimum results are obtained when the pH is approximately 0.4 and the solution is maintained at a temperature of 18.3 + 12.20C. For the second step of the triple seeder process, the palladium chloride bath is formed by mixing 50 grams of palladium (with a concentration of 0.13 to 0.17 g/l) with approximately 3780 ml of 37 % hydrochloric acid (having a concentration of 10 ml/l). The PdC12 is dissolved in the hydrochloric acid with the resultant mixture being added to a tank of deionized water. Again, the bath is maintained at a temperature of 18.3 + 12.20C, the pH is maintained between 0.75 and 1, and the copper content of the solution is kept below 50 parts per million. The final catalytic palladium chloride/stannous chloride/hydrochloric acid seeder bath includes a bath comprising 1.2 to 2.5 gIl of PdCl2 with 80 to 150 g/l of SnC12-2H2O together with between 290 and 360 ml of 37 % RCl per liter of solution. This third seeding bath is again maintained at a temperature of 18.3 + 12.20C. The optimum solution of the bath includes about 1.5 g/l of PdCl2, 100 g/l of SnCl2 and 280 ml/l of 37 % hydrochloric acid. As illustrated in Figure 7, the second resist layer is removed while leaving the first resist layer remaining on the substrate. When the second resist layer is an aqueous strippable resist such as Riston 3515, the exposed portion can be removed by sodium hydroxide aqueous solution which concomitantly acts as an accelerator for the seeder in that it also removes the outer layer of tin from the colloidal particles. This, in turn, leaves the palladium particles exposed and enables them to more effectively act as nucleating sites for the additivei electroless plating. The removal of the second resist layer results in removal of the seeder from the entire substrate, except for those portions where the seeder remains on the exposed substrate for subsequent electroless plating thereon (see Figure 7). Next, a metal 6, such as nickel or copper, is plated by electroless plating onto the treated surface (see Figure 8), The metal is coated to the desired thickness. The preferred metal employed is copper. The preferred copper electroless plating baths and their method of application are disclosed in U.S. Patents 3,844,799 and 4,152,467. The copper electroless plating bath is generally an aqueous composition which includes a source of cupric ion, a reducing agent, a complexing agent for the cupric ion, and a pH adjustor. The plating baths also preferably include a cyanide ion source and a surface active agent. The cupric ion source generally used is a cupric sulfate or a cupric salt of the complexing agent to be employed. When employing cupric sulfate, it is preferred to use amounts from about 3 to about 15 g/l and most preferably from about 8 to about 12 g/l. The most common reducing agent employed is formaldehyde which, in the preferred aspects, is used in amounts from about 0.7 to about 7 g/l and most preferably from about 0.7 to about 2.2 g/l. Examples of some other reducing agents include formaldehyde precursors or derivatives such aslparaformaldehyder trioxane, dimethyl hydantoin, and glyoxal; borohydrides such as alkali metal borohydrides (sodium and potassium borohydride) and substituted borohydrides such as sodium trimethoxyborohydride; and boranes such as amine borane (isopropyl amine borane and morpholine borane). Hypophosphite reducing agents can also be used for electroless Ni and Cu plating. Examples of some suitable complexing agents include Rochelle salts, ethylene diamine tetraacetic acid, the sodium (mono-, di-, tri-, and tetra-sodium) salts of ethylene diamine tetraacetic acid, nitrilotetraacetic acid and its alkali salts, gluconic acid, gluconates, triethanol amine, glucono (gamma) -lactone, modified ethylene dialing acetates such as N-hydroxyethyl ethylene dismine triacetate. In addition, a number of other suitable cupric complexing agents are suggested in U.S. Patents 2,996,408; 3,075,855; 3,075,856; and 2,938,805. The amount of complexing agent is dependent upon the am unit of cupric ions present in the solution and is generally from about 20 to about 50 gll, or in a 3-4 fold molar excess. The plating bath can also contain a surfactant which assists in wetting the surface to be coated. A satisfactory surfactant is, for instance, an organic phosphate ester available under the trade designation 'Gatac RE-610". Generally, the surfactant is present in amounts from about 0,02 to about 0.3 g/l. In addition, the pH of the bath is also generally controlled, for instance, by the addition of a basic compound such as sodium hydroxide or potassium hydroxide in the desired amount to achieve the desired pH. The preferred pS of the electroless plating bath is between 11.6 and 11.8. Also preferably, the plating bath also contains a cyanide ion and most preferably contains about 10 to about 25 mgXl to provide a cyanide ion concentration in the bath within the range of 0.0002 to 0.0004 molar. Examples of some cyanides which can be employed are the alkali metal, alkaline earth metal, and ammonium cyanides. In addition, the plating baths can include other minor additives as is well-known in the prior art. The preferred plating baths employed have a specific gravity within the range of 1.060 to 1.080. In addition, the temperature of the bath is preferably maintained between 700C and 800C and most preferably between 700C and 750C. For a discussion of the preferred plating temperatures coupled with the preferred cyanide ion concentrations, see U.S. Patent 3,844,799. Also, the 2 content of the bath can be maintained between about 2 ppm and 4 ppm and preferably about 2.5 to 3.5 ppm, as discussed in U.S. Patent 4,152,467. The O2 content can be controlled by injecting oxygen and an inert gas into the bath. The overall flow rate of the gases into the bath is generally from about 0.028 to about 0.566 standard 3 m Imin. per 3785 liters of bath and preferably from about 0.085 to about 0.227 standard m3lmin. per 3785 liters of bath. Next, the layer of the first resist 2 can be removed, leaving the desired conductive pattern 6 on the substrate 1. When this layer is Riston T-168, the exposed material can be removed employing l,l,dichloromethane. For certain applications it may be desirable to allow the first resist layer 2 to remain on substrate 1. Mask-ing processes employing two photoresist layers have been suggested, but such processes were not concerned with seeding or activating selected portions of a substrate. In particular, U.S. Patent 3,934,057 and U.S. Patent 4,180,604 relate to a structure comprising a substrate coated with two layers of photoresist which differ in their rate of dissolution in resist developer. After the layers of resist are developed, a metal film is deposited on the exposed substrate surface and the upper resist layer. A resist edge profile is produced which is desirable for metal lift-off. These two patents do not suggest a sequence of steps for activating selected portions of a circuit board, but suggest processes wherein metal is plated on the upper photoresist layer as well as on the exposed substrate. U.S. Patent 4t088,490 relates to a process for metallizing a substrate wherein two photoresist layers are employed. The two layers are separately exposed and developed with intervening steps of metal plating.

Claims: CLAIMS 1. Process for activating a substrate for electroless deposition of a conductive metal on preselected portions of the substrate which comprises: a) providing a first resist layer (2) onto a major surface of substrate (1); b) providing a second resist layer (3) onto first resist layer (2), said second resist having different solubility characteristics than those of said first resist; c) exposing first and second layers (2, 3) of resist to imaging radiation in a pre determined pattern; d) developing each of first and second layers (2, 3) of resist-; e) seeding the resulting exposed substrate; and f) removing the second resist layer (.3) from the structure, thereby removing seeder, except from the exposed areas of substrate (1). 2. Process of claim 1 wherein first resist layer (2) and second resist layer (3) are negative resists. 3. Process of claim 2 wherein second resist layer (3) is removed by an aqueous sodium hydroxide solution. 4. Process of claim 3 wherein first resist layer (2) is removable by an organic solvent. 5. Process of claim 4 wherein said organic solvent is 1,1 dichloromethane 6. The process of claim 1 wherein the thickness of first resist layer (a) is about 0.025 to about 0.102 mm and the maximum thickness of second resist layer (3) is about 0.013 mm. 7. Process of claim 6 wherein the thickness of first resist layer (2) is about 0.038 to about 0.064 mm. 8. Process of claim 1 wherein said imaging radiation is U.V. light. 9. Process of claim l wherein first resist layer (2) and second resist layer (3) are applied by laminating. 10. Process of claim 1 which includes providing a composite of said first resist and said second resist and then providing the composite on said major surface. 11. Process of claim 1 wherein first resist layer (2) is exposed to imaging radiation and, if desired, developed prior to providing second resist layer (3) onto first resist layer (2). 12. Process of claim 1 wherein prior to seeding, the substrate is contacted with a composition containing a multi functional ionic polymer material containing at least two available ionic moieties, wherein said ionic moieties are of a charge opposite from the charge associated with the seeder particles to be subsequently applied to the substrate. 13. Process of claim 11 wherein said multifunctional ionic polymer material is a copolymer of acryl amide and ammonium quaternary compounds. 14. Process of claim 1 wherein the seeder includes palladium and tin. 15. Process for plating a substrate with a conductive metal on preselected portions of said substrate which comprises further to steps a) to f) of claim 1 g) contacting the substrate with an electroless plating bath containing a conductive metal therein, and subsequently removing first resist layer (2). 16. Process of claim 15 wherein said conductive metal is nickel or copper.

Inventors: JONES, GERALD WALTER, LAWRENCE, WILLIAM HOWELL, ROVENTE, FREDERICK MICHAEL
Applicants: INTERNATIONAL BUSINESS MACHINES CORPORATION
Application year: 1985
Main classification: H05K3
IPC codes: H05K3, H05K1, G03F7