AN INTERNAL-REFLECTION-INTERFERENCE SEMICONDUCTOR LASER DEVICE

Abstract: An internal-reflection-interference semiconductor laser device comprising a first laser operation area ranging from one facet to the internal reflecting section and a second laser operation area ranging from the other facet to the internal reflecting section, wherein the internal-cavity length ℓ₁ of the first laser operation area is shorter than the internal-cavity length ℓ₂ of the second laser operation area, the reflectivity R₁ at the facet on the side of the first laser operation area is smaller than the reflectivity R₂ at the facet on the side of the second laser operation area.

Description: This invention relates to a semiconductor laser device, especially, an internal-reflection-interference semiconductor laser device, which has a stabilized oscillation wavelength over a wide range of temperatures. Semiconductor laser devices which are being mass-produced can oscillate at a low threshold current level, and their various characteristics, such as the single transverse mode, the single longitudinal mode, and life span have satisfactory qualities. However, problems remain to be solved with regard to the stability of the oscillation wavelength in longitudinal modes. With changes in temperature or in the driving current, the oscillation wavelength changes continuously or discontinuously, and moreover, optical output power noise is generated. In particular, this noise is accentuated when the laser devices are irradiated with light from the outside, and/or laser light output is reflected by external optical devices. In order to solve these problems, internal-reflection-interference semiconductor laser devices have been proposed, an example of which is shown in Figure 5. This laser device has an n-substrate 1, an n-cladding layer 2, an active layer 3, a p-cladding layer 4, a p-cap layer 5, and a current-blocking oxide film 6. The reference 7 is an internal reflecting section, in which the portion of the active layer 3 (or the cladding layer 2) corresponding to the channel 11, which is constructed to be perpendicular to the laser oscillation direction is different in thickness from the other portion of the active layer 3 (or the cladding layer 2), so that this reflecting section 7 attains an internal reflection effect. The resulting wafer is separated by the reflecting section 7 into two laser operation areas 8 and 9, one (i.e., a first operation area 8) having the internal-cavity length ℓ₁ and the other (i.e., a second operation area 9) having the internal-cavity length ℓ₂. Due to the interference effect of lights attained between the laser operation areas 8 and 9, stability of the oscillating wavelength in longitudinal modes can be expected. The space λ₁ between the longitudinal modes of the first laser operation area 8 is proportional to λ²/2 n ℓ₁ , and the space Δλ₂ between the longitudinal modes of the second laser operation area 9 is proportional to λ²/2 n ℓ₂ , wherein λ is the oscillation wavelength and n is the refractive index of the active layer. Moreover, due to the interference of the longitudinal modes between the first laser operation area 8 and the second laser operation area 9, a broad space Δ (=λ²/2 n | ℓ₂ -ℓ₁|) between the longitudinal modes is created so that a stabilized oscillation can be attained in only the longitudinal mode around the peak of the gain distribution. However, with a conventional internal-reflection-interference semiconductor laser device mentioned above, it is difficult to obtain a strong reflection from the internal reflecting area 7. Therefore, because the selectivity for the wavelength is poor, it is not possible to stabilize the longitudinal mode over a wide range of temperatures. Thus, in practice, the oscillation wavelength is stabilized over a temperature difference of 5-10°C at the most. Moreover, it is impossible to suppress completely the instability of a longitudinal mode arising from reflected light. The semiconductor laser device of this invention which overcomes the above-discussed and numerous other disadvantages and deficiencies of the prior art, comprises a first laser operation area ranging from one facet to the internal reflecting section and a second laser operation area ranging from the other facet to the internal reflecting section, wherein when the internal-cavity length ℓ₁ of the first laser operation area is shorter than the internal-cavity length ℓ₂ of the second laser operation area, the reflectivity R₁ at the facet on the side of the first laser operation area is smaller than the reflectivity R₂ at the facet on the side of the second laser operation area. The internal reflecting section is, in a preferred embodiment, located along a V-shaped channel which is formed on the substrate in a manner to be perpendicular to the laser oscillation direction. Thus, the invention described herein makes possible the objects of (1) providing an internal-reflection-interference semiconductor laser device which has a stabilized oscillation wavelength over a wide range of not only temperatures but also injection driving currents and which suppresses the instability of a longitudinal mode arising from reflected light thereto; and (2) providing an internal-reflection-interference semiconductor laser device which suppresses noise resulting from reflected light thereto. This invention may be better understood and its numerous objects and advantages will become apparent to those skilled in the art by reference to the accompanying drawings as follows: Figure 1 is a diagrammatical side view showing the internal-reflection-interference semiconductor laser device of this invention. Figure 2(a), 2(b) and 2(C), respectively, are graphs illustrating the relationship between the oscillation wavelength λ and the effective reflectivity r² eff when the internal-cavity length ℓ₁ of the first laser operation area 8 is nearly equal to the internal-cavity length ℓ₂ of the second laser operation area 9, the relationship between the oscillation wavelength λ and the effective reflectivity r² eff when the internal-cavity length ℓ₁ is shorter than the internal-cavity length ℓ₂, and the relationship between the oscillation wavelength λ and the effective reflectivity r² eff when the internal-cavity length ℓ₁ is shorter than the internal-cavity length ℓ₂ and the reflectivity R₁ at the facet 15 on the side of the first laser operation area 8 is smaller than the reflectance R₂ at the other facet 16 on the side of the second laser operation area 9. Figure 3 is a perspective view showing the internal-reflection-interference semiconductor laser device of this invention. Figure 4 is a characteristic curve showing the dependence of the oscillation wavelength λ on temperature with regard to the semiconductor laser device shown in Figure 3. Figure 5 is a perspective view of a conventional internal-reflection-interference semiconductor laser device. This invention is based on the following principle: when an internal-reflection-interference semiconductor laser device comprises a waveguide having such an internal reflecting section 7 as shown in Figure 1, the effective reflectivity r² eff is represented by the following equation (1) according to Shyh Wang et al's proposal (Appl. Phys. Lett. 40(7), 571, 1982): wherein r eff is the effective reflectivity of an electric field; r₁ and r₂ are the reflectivities of an electric field at the facets, respectively; S₁₁ is the reflectivity of an electric field of the internal reflecting section 7 on the side of the first laser operation area 8; S₂₂ is the reflectivity of an electric field of the internal reflecting section 7 on the side of the second laser operation area 9 (wherein S₁₁=S₂₂); S₁₂ is the transmission index of an electric field of the internal reflecting section 7; ℓ₁ and ℓ₂ are the internal-cavity lengths of the waveguides in the first laser operation area 8 and the second laser operation area 9, respectively; and Γ is the propagation constant of the oscillation wavelength in the waveguide. The power reflectivities at the facets R₁ and R₂, respectively, are defined by the equations R₁=r₁² and R₂=r₂³. Given that the internal loss is g, the refractive index of the waveguide is n, and the wavelength is λ, the propagation constant Γ can be defined by the equation Γ=g+i (2π n /λ). From the equation (1), the following equation (2) can be derived: The selectivity for the wavelength can be determined by the second term in the equation (2), i.e., the sum of the periodic functions which depend upon ℓ₁ and ℓ₂. Given that ℓ₁ is nearly equal to ℓ₂, an r² eff such as that shown in Figure 2(a) can be provided. Given that ℓ₁ is considerably shorter than ℓ₂ (i.e., ℓ₁<<ℓ₂, and thus e -2gℓ 2<e -2gℓ 1), an r² eff such as that shown in Figure 2(b) can be provided, indicating that the selectivity for the wavelength is increased. Given that R₁ is smaller than R₂ (i.e., R₁<R₂, and thus √ R₁ e -2gℓ 2<<√ R₂e -2gℓ 1) , an r² eff such as that shown in Figure 2(c) can be provided, indicating that the degree of modulation is greater than that in Figure 2(b) so that the selectivity for the wavelength is further increased, resulting in a stabilized oscillation wavelength over a wide range of temperatures and achieving the minimization of optical output power noise resulting from reflected light. Conventional internal-reflection-interference semiconductor laser devices have been designed to increase the internal reflection index S₁₁. On the contrary, the internal-reflection-interference semiconductor laser device of this invention is designed in such a manner that the internal-cavity length ℓ₁ of the first laser operation area 8 is shorter than the internal-cavity length ℓ₂ of the second laser operation area 9, and moreover the power reflectivity R₁ at the facet 15 of the first laser operation area 8 is smaller than the power reflectivity R₂ at the facet 16 of the second laser operation area 9, thereby allowing for an increase in the wavelength selectivity so that the stability of the oscillation wavelength can be attained over a wide range of temperatures. Example Figure 3 shows an internal-reflection-interference semiconductor laser device of this invention, which comprises, in sequence, an n-substrate 11 having a V-shaped channel 11 which is perpendicular to the laser oscillation direction, an n-cladding layer 2, an active layer 3, a p-cladding layer 4, a p-cap layer 5, and a current-blocking oxide film 6. Along the V-shaped channel 11, the internal reflecting section 7 is located, by which the wafer is separated into two portions, i.e., the first laser operation area 8 and the second laser operation area 9. The above-mentioned structure of this invention is the same as that of the conventional internal-reflection-interference semiconductor laser device shown in Figure 5 except for the following matters. The internal-cavity length ℓ₁ of the first laser operation area 8 is shorter than the internal-cavity length ℓ₂ of the second laser operation area 9, and the reflectivity R₁ at the front facet 15 emitting light therefrom on the side of the first laser operation area 8 is smaller than the reflectivity R₂ at the back facet 16 on the side of the second laser operation area 9. The desired values of the reflectivities R₁ and R₂ at the facets 15 and 16, respectively, can be obtained by coating these facets with a multi-layered film made of dielectric substances composed of materials such as α-Si and α-Si/Al₂O₃. The relationship between the operation temperature and the oscillation wavelength of the resulting internal-reflection-interference semiconductor laser device was examined. The results are shown in Figure 4 which indicates that the oscillation wavelength exhibits no spectrum hopping over the temperature range of 20°C, and that the instability of a longitudinal mode resulting from reflected light can be suppressed sufficiently. Moreover, since the reflectivity R₁ at the front facet 15 is smaller than the reflectivity R₂ at the back facet 16, the oscillation wavelength can be stabilized and a high optical output power can be produced. The present invention is not limited to the internal-reflection-interference semiconductor laser device described in the above-mentioned Example, but it can be applied to a semiconductor laser device having a different polarity from the polarity of each of the substrate and the grown layers in the above-mentioned Example. Moreover, the present invention is not limited to the shape of the waveguide and/or the shape of the internal reflecting section described in the above-mentioned Example.

Claims: An internal-reflection-interference semiconductor laser device comprising a first laser operation area (8) ranging from one facet (15) to an internal reflecting section (7) and a second laser operation area (9) ranging from the other facet (16) to the internal reflecting section (7), wherein the internal-cavity length (ℓ₁) of the first laser operation area (8) is shorter than the internal-cavity length (ℓ₂) of the second laser operation area (9), and the reflectivity (R₁) at the facet (15) on the side of the first laser operation area (8) is smaller than the reflectivity (R₂) at the facet (16) on the side of second laser operation area (9). An internal-reflection-interference semiconductor laser device according to claim 1, wherein said internal reflecting section (7) is located along a V-shaped-channel which is formed on the substrate (1) in a manner to be perpendicular to the laser oscillation direction.

Inventors: HAYASHI, HIROSHI, MORIMOTO, TAIJI, YAMAMOTO, OSAMU, YAMAMOTO, SABURO
Applicants: SHARP KABUSHIKI KAISHA
Application year: 1985
Main classification: H01S3
IPC codes: H01S5, H01S3