SEMICONDUCTOR LASER ARRAY

Abstract: A semiconductor laser array includes a p-GaAs subs­ trate, a p-Ga 1-x Al x As cladding layer, a Ga 1-y Al y As active layer, an n-Ga 1-z Al z As optical guide layer, an n-Ga 1-x Al­ x As cladding layer and an n-GaAs cap layer formed by the liquid phase epitaxial growth method. A plurality of stripe shaped grooves are formed from the surface of the n-GaAs cap layer so that the bottom of the groove reaches the intermediate of the n-Ga 1-z Al z As optical guide layer. A Ga 1-b Al b As high resistance layer is filled in the plurality of stripe shaped grooves so that injecting current is divided into the plural pathes, and each laser emitting region is optically, phase coupled to each other with the phase difference of zero degree.

Description: BACKGROUND OF THE INVENTION FIELD OF THE INVENTION The present invention relates to a semiconductor laser structure and, more particularly, to a semiconductor laser array which includes a current confinement structure and a built-in refractive index difference, the refractive index being the vaule of the real part only. DESCRIPTION OF THE PRIOR ART A semiconductor laser has widely been used as a light source in an optical information processing system such as an optical disc system and a laser printer. A rapid processing is required in such an optical information processing system as the amount of information to be handled increases. To ensure the rapid processing, the semiconductor laser must emit the laser beam at a high power level in a stable operating range. However, in the conventional semiconductor laser having a single active region, the practical maximum output is around 50 mW. To enhance the output level, a laser device has been proposed, wherein a plurality of semiconductor lasers are aligned in a parallel fashion, and the plurality of semiconductor lasers are optically, phase coupled to each other so as to emit the laser beam in a single phase. This is referred to as the phase coupled laser array. However, in the semiconductor laser array of the gain guide type, the gain is substantially reduced at the coupling region positioned between the adjacent two laser emitting regions and, therefore, the electric field has the phase difference of 180 degrees at the ajacent two laser emitting regions. The far field pattern has a plurality of peaks as shown in FIGURE 1. Thus, the semiconductor laser array of the gain guide type can not endure the practical use. To improve the above-mentioned problems, a semiconductor laser array of the index guide type has been proposed. For example, D. E. Ackley et al of Hewlett-Packard Laboratories proposed a semiconductor laser array of the leaky mode built-in type (Appl. Phys. Letters, 39(1), 1 July 1981. P27). The proposed laser array ensures an effective coupling of the laser emitting regions, but has two peaks in the far field pattern because of the leaky mode. D. Botez et al of RCA Laboratories proposed a CSP-LOC (Channeled-Substrate-Large-Optical-Cavity) laser (document of IOOC, 1983. 29B5-2). The proposed semiconductor laser utilizes the distribution of effective refractive index which is formed by the coupling to the GaAs substrate. The region disposed between the adjacent two laser emitting regions has a high absorption coefficient. The refractive index difference is not obtained when the absorption coefficient is minimized. Accordingly, it is difficult to reduce the phase difference between the adjacent two laser emitting regions to zero. D. E. Ackley of Hewlett-Packard Laboratories further proposed the semiconductor laser array of the ridge-type (Appl. Phys. Letters, 42(2), 15 January 1983. P152). Each pair of the adjacent two laser emitting regions has the phase difference of 180 degrees because of the high absorption caused by the electrode disposed at the coupling region of the adjacent two laser emitting regions. E. Kapon et al of California Institute of Technology disclosed an integrated semiconductor laser phased array of the gain-guided type having separate contacts for each laser element (Appl. Phys. Letters, 44(2), 15 January 1984. P157). The individual laser stripes were delineated by using proton implantation and the separate contacting was accomplished by employing two-level metalisation. The different laser currents were varied for different results. SUMMARY OF THE INVENTION In accordance with the present invention, there is provided a semiconductor laser array comprising: a substrate; a layered structure formed on said substrate, said structure comprising an active layer with a plurality of grooves formed in the part of the layered structure over said active layer so as to form a plurality of mesa stripes on said active layer; and current injection means for injecting current into said active layer through said plurality of mesa stripes, wherein said grooves contain high resistance layer portions for separating adjacent said mesa stripes and thereby causing division of said injected current into a plurality of current paths through respective said mesa stripes, laser emitting regions defined by respective said mesa stripes being optically phase coupled to the next said laser emitting region by a coupling region, said laser emitting regions and said coupling regions and said coupling regions having refractive indices of the real part only which differ from each other whereby an index-guided structure is formed in each laser emitting region. In particular, there is provided a semiconductor laser array comprising: a substrate; a first cladding layer formed on said substrate; an active layer formed on said first cladding layer; an optical guide layer formed on said active layer; a second cladding layer formed on said optical guide layer; a cap layer formed on said second cladding layer; a plurality of mesa stripes formed on said optical guide layer, each mesa stripe being separated from the next mesa stripe by a groove extending into said optical guide layer, and each said groove containing high resistance layer portions; and current injection means for injecting current into said active layer through said plurality of mesa stripes, wherein laser emitting regions are defined by said mesa stripes, each laser emitting region being optically phase coupled connected to the next laser emitting region, by a coupling region, said laser emitting regions and said coupling regions having refractive indices of the real part only which differ from each other whereby an index-guided structure is formed in each laser emitting region. Further embodiments of the invention are set out in the dependent claims. BRIEF DESCRIPTION OF THE DRAWINGS The present invention will be better understood from the detailed description given hereinbelow and the accompanying drawings which are given by way of illustration only, and thus are not limitative of the present invention and wherein: Figure 1 is a graph showing the far field pattern of a semiconductor laser array of the gain guide type; Figure 2 is a sectional view of an embodiment of a semiconductor laser array of the present invention; Figure 3 is a graph showing the optical output characteristic of the semiconductor laser array of Figure 2; and Figure 4 is a graph showing the far field pattern obtained by the semiconductor laser array of Figure 2. DESCRIPTION OF THE PREFERRED EMBODIMENTS FIGURE 2 shows an embodiment of a semiconductor laser array of the present invention. A semiconductor laser array of the present invention includes a p-GaAs substrate 1, a p-Ga 1-x Al x As cladding layer 2 formed on the substrate 1, a Ga 1-y Al y As active layer 3, an n-Ga 1-z Al z As optical guide layer 4, an n-Ga 1-x Al x As cladding layer 5, and an n-GaAs cap layer 6. The layers 2, 3, 4, 5 and 6 are sequentially formed on the p-GaAs substrate 1 by the well-known liquid-phase epitaxial growth method so as to form a multilayered laser emitting crystal of the double-hetero structure. An etching operation is effected to the multi-layered laser emitting crystal by the photo-lithography method so as to form a plurality of stripes 7 on the GaAs substrate 1. Each stripe 7 has a width of 4 µm, and the stripes 4 has a pitch of 8 µm. The etching is effected from the cap layer 6, and the etching depth is controlled so that the etched portion reaches the inside of the intermediate layer 4. Each etched groove has a width of 4 µm. Thereafter, a Ga 1-b Al b As high resistance layer 8 is formed in the etched groove through the use of the liquid-phase epitaxial growth method. The crystal formation temperature cycle is properly controlled so that the high resistance layer 8 is formed in the etched groove, but is not formed on the stripes 7. The AlAs mole fractions of the respective layers must satisfy the following conditions. y<z<x (1) z<b (2) An n-side electrode is formed on the surface of the grown crystal, which creates the ohmic contact to the cap layer 6. A p-side electrode is formed on the rear surface of the GaAs substrate 1. When a D.C. voltage is applied between the n-side and p-side electrodes, the carrier is injected into the active layer 3 through the stripes 7 to conduct the laser emitting operation. The p-cladding layer 2, the active layer 3, and the optical guide layer 4 formed on the GaAs substrate 1 are common to each of the stripes 7. The n-cladding layer 5, and the cap layer 6 are divided into the stripes 7 by the high resistance layer 8. Therefore, the current is divided into plural paths. Each stripe 7 forms the current confinement structure which defines each laser emitting region 9. The active layer 3 included in the laser emitting region 9 emits the laser beam. The regions disposed between the adjacent two laser emitting regions 9 function as optical coupling regions 10 at which the laser beam is optically phase coupled. The laser emitting region 9 and the optical coupling region 10 have the refractive indexes of the real part only, which differ from each other. The refractive index difference should be greater than the reduction of the refractive index (-1.3 x 10⁻³) caused by the current injection. The optical guide layer 4 is provided for facilitating the control of the refractive index difference between the laser emitting region 9 and the optical coupling region 10, and for enhancing the optical coupling efficiency between the adjacent laser emitting regions 9. Theoretically, the optical guide layer 4 can be omitted. A semiconductor laser array including five (5) stripes 7 is formed as an example. Figure 3 shows the optical output characteristic of this example, and Figure 4 shows the far field pattern of this example. Figure 4 shows that each laser emitting region 9 is connected to the next laser emitting region 9 with the phase difference of zero degree.

Claims: A semiconductor laser array comprising: a substrate (1); a layered structure (2 to 6) formed on said substrate, said structure comprising an active layer (3) with a plurality of grooves formed in the part of the layered structure over said active layer (3) so as to form a plurality of mesa stripes (7) on said active layer; and current injection means for injecting current into said active layer through said plurality of mesa stripes, wherein said grooves contain high resistance layer portions (8) for separating adjacent said mesa stripes and thereby causing division of said injected current into a plurality of current paths through respective said mesa stripes, laser emitting regions (9) defined by respective said mesa stripes, each laser emitting region being optically phase coupled to the next said laser emitting region by a coupling region (10), said laser emitting regions and said coupling regions having refractive indices of the real part only which differ from each other whereby an index-guided structure is formed in each laser emitting region. A semiconductor laser array according to claim 1, wherein said substrate (1) is a p-GaAs substrate, and wherein said layered structure formed thereon comprises: a p-Ga 1-x Al x As cladding layer (2) formed on said p-GaAs substrate (1); a Ga 1-y Al y As active layer (3) formed on said p-Ga 1-x Al x As cladding layer (2); an n-Ga 1-z Al z As optical guide layer (4) formed on said Ga 1-y Al y As active layer (3); an n-Ga 1-x Al x As cladding layer (5) formed on said n-Ga 1-z Al z As optical guide layer (4); and an n-GaAs cap layer (6) formed on said n-Ga 1-x Al x As cladding layer (5); said plurality of grooves being formed in said n-GaAs cap layer (6), said n-Ga 1-x Al x As cladding layer (5) and said n-Ga 1-z Al z As optical guide layer (4) so that the bottom of each groove reaches the inside of said n-Ga 1-z Al z As optical guide layer (4). A semiconductor laser array according to claim 2, wherein the mole fractions of said cladding, active and optical guide layers satisfy the following condition: y < z < x A semiconductor laser array according to claim 3, wherein each of said plurality of high resistance layer portions (8) comprise Ga 1-b Al b As, where: z < b A semiconductor laser array comprising: a substrate (1); a first cladding layer (2) formed on said substrate; an active layer (3) formed on said first cladding layer; an optical guide layer (4) formed on said active layer; a second cladding layer (5) formed on said optical guide layer; a cap layer (6) formed on said second cladding layer; a plurality of mesa stripes (7) formed on said optical guide layer, each mesa stripe being separated from the next mesa stripe by a groove extending into said optical guide layer, and each said groove containing high resistance layer portions (8); and current injection means for injecting current into said active layer through said plurality of mesa stripes, wherein laser emitting regions (9) are defined by said mesa stripes, each laser emitting region being optically phase coupled to the next laser emitting region by a coupling region (10), said laser emitting regions and said coupling regions having refractive indices of the real part only which differ from each other whereby an index-guided structure is formed in each laser emitting region.

Inventors: MATSUI, SADAYOSHI, TANEYA, MOTOTAKA, YAMAMOTO, SABURO, YANO, SEIKI
Applicants: SHARP KABUSHIKI KAISHA
Application year: 1985
Main classification: H01S3
IPC codes: H01S5