OXIDE SEMICONDUCTOR FOR THERMISTOR AND A METHOD OF PRODUCING THE SAME

Abstract: An oxide semiconductor for a thermistor used as a sensor over a temperature range chiefly from 200° to 500°C. The oxide semiconductor contains five metal elements, i.e., 60.0 to 98.5 atomic % of Mn, 0.1 to 5.0 atomic % of Ni, 0.3 to 5.0 atomic % of Cr, 0.2 to 5.0 atomic % of Y, and 0.5 to 28.0 atomic % of Zr, a total of 100 atomic % of these five metal elements. When used as a temperature sensor in medium temperature and high temperature ranges, the oxide semi­ conductor for a thermistor exhibits an excellent characteris­ tic; i.e., the change of resistance due to the aging is smaller than ± 5% in the temperature range of 200° to 500°C, rendering the thermistor fit well for measuring temperatures when high reliability is required at high temperatures.

Description: TECHNICAL FIELD The present invention relates to an oxide semiconductors far thermistors adapted for use mainly in a temperature range of 200-500°C. BACKGROUND ART Heretofore, thermistors comprising oxide of Mn and Co as their main components have been widely used. They include compositions of Mn-Co system oxide, Mn-Co-Cu system oxide Mn-Co-Ni system oxide and Mn-Co-Ni-Cu system oxide, which have been used as general purpose disc shape thermistors for such applications as temperature compensation, etc. These thermistors give, as a characteristic of such materials, specific resistances from ten and several Ω-cm to one hundred and several tens kΩ-cm for use mainly in a temperature range from -40°C to 150°C. However, demand for their use as temperature sensors has recently grown larger; thus, thermistor sensors which are usable at higher temperature have been in demand. As a first step, a demand has been raised for thermistor sensors which are usable at temperature up to 300°C for temperature control of petroleum combustion equipment. In order to deal with this situation, materials with high specific resistances have been taken up as materials of thermistors in the place of conventional materials comprising oxide of Co-Mn as their main components and until now Mn-Ni-Al system oxide semiconductors (Japanese Patent Gazette Patent Laid-Open No. Sho 57-956O3) and Mn-Ni-Cr-Zr system oxide semiconductors (specification of U.S. Patent No. 4,324,702) offered by the present inventors have been put into practical use. With regard to the construction of the sensor, sloughing conventional structure of the disc shape thermistor molded of resin, the object of shielding it. from high temperature atmosphere has been attained by sealing a thermistor element of such a very minute size as 500 µn, x 500 µm x 300 µm (t) in a glass tube or fly coating glass on the thermistor element fly way of dipping. On the other hand, just as the disc shape thermistors, bead shape thermistors have been improved in heat resistance by glass-coating. However, a demand for thermistor sensors which are usable at still higher temperatures have not been abated, there being strong demands for sensors which permit uses at such temperatures as above 300°C, 500°C or up to 700°C. These demands can not be met with the conventioned materials because of the following two problems involved: Thus (1) their specific resistances, being one of characteristics of thermistor materials, are low; that is, resistances required for operation of equipment at intended temperatures can not be obtained, and another one, (2) they lack in reliability, because their resistance change with time at high temperatures exceeding the required 5% (500°C, 1000 Hr). On the other hand, as materials which bear use at such high temperatures as 700°C-1000°C, stabilized zirconia ( ZrO₂-Y₂O₃ , ZrO₂-CaO , etc.), Mg-Al-Cr-Fe system oxide compositions, etc., have been developed. However, these oxide materials require such high sintering temperatures as above 1600°C; they could not be sintered, using ordinary electric furnaces (operatable at 1600°C max. ). Moreover, even sintered materials give large resistance changes with time at high temperatures, being as large as 10% (1000 Hr) as reported for very stable ones, and therefore, improvement of the reliability is further sought. To solve this problem, new materials have already been offered in Japan, but they are still in evaluation stage (Mn-Zr-Ni system oxide: Japanese Patent Gazette, Patent Laid-Open No. Sho 55-88305 ( Ni x Mg y Zn z ) Mn₂O₄ -spinel type: ibid. Patent Laid-Open No. Sho 57-8870] ( Ni p Co q Fe r Al s Mn t )O₄-spinel type: ibid. Patent Laid-Open No. Sho 57-88702). SUMMARY OF THE INVENTION The present invention provides oxide semiconductors for thermistors comprising 5 kinds of metal elements - 60.0-98.5 atomic % of manganese (Mn), 0.1-5.0 atomic % of nickel (Ni), 0.3-5.0 atomic % of chromium (Cr), 0.2-5.0 atomic % of yttrium 0.5-28.0 atomic % of zirconium (zr), to a sum total of 100 atomic % - which endow the thermistors with such a high reliability as evidenced by their resistance changes with time after a lapse of 1000 hr at 500°C being within + 5%. BRIEF DESCRIPTION OF THE DRAWING Fig.1 is a front view of section of a thermistor sealed in glass which has been trial-made from the composition of the present invention. Fig.2 through 6 portray characteristic graphs showing resistance changes with time at 500°C of thermistors sealed in glass manufactured from the compositions of the present invention. THE BEST MODE FOR EMBODYING THE INVENTION The present invention realized as an accumulated result of various experiments provides an oxide semiconductors for a thermistor comprising 5 kinds of metal elements - 60.0-38.5 atomic % of manganese (Mn), 0. 1-5.O atomic % of nickel. (Ni), 0.3-5.0 atomic % of chromium (Cr), 0.2-5.0 atomic % of yttrium (Y) and 0.5-28.0 atomic % of zirconium (Zr), to the sum total of 100 atomic %. Also it provides another oxide semiconductors for a thermistor further comprising 2.0 atomic % or below of silicon (Si) (exclusive of 0 atomic %) in addition to the composition comprising 5 kinds of metal elements - 60.0-98.5 atomic % of manganese (Mn), 0.1-5.0 atomic % of nickel (Ni), 0.3-5.0 atomic % of chromium (Cr), 0.2-5.0 atomic % of yttrium and 0.5-28.0 atomic % of zirconium (Zr), to the sum total of 100 atomic %. In the following, this invention is described in connection with some embodiments thereof: <EXAMPLE 1> First, MnCO₃ , NiO and Cr₂O₃ , being materials available on the market, and ZrO₂ having Y₂O₃ dissolved therein in solid state were so proportioned as to have the composition of respective atomic % shown in Table 1 below. They were mixed together under wet state in a ball-mill, thereafter, dried and calcined at 1000°C. The product was again milled with a ball-mill and the slurry obtained was dried. A required amount of the slurry, after dried and with polyvinyl alcohol added and mixed therewith as a binder. was taken and pressed into a block 30mm in diameter and 15 mm thick. This pressed block was sintered in air at 1500°C for 2 hr. The block obtained in this way was sliced and ground to take a 150-400 µm thick wafer therefrom and a platinum electrode was provided on this wafer by screen printing method. A chip of the desired size was cut from this wafer provided with the electrode. This element was sealed in a glass tube in an atmosphere of argon gas, thereby being hermetically sealed from ambient air. At this time, Dumet wire was utilized as the lead wire terminal, but slag leads such as Kovar wire, etc., may be employed to suit the operating temperature. And depending on the type of slag lead, the sealed-in atmosphere may be altered, as appropriate, into air, etc.. The resistance change of this thermistor sealed in glass was measured after leaving for 1000 hr in air at 500°C. Its specific resistances at 25°C are shown, as the initial characteristic, together with the thermistor constant as a thermistor sealed in glass, in listed in Table 1. The thermistor constant B was calculated by the following formula (1) from the resistance values obtained by measurements at two temperatures of 300°C and 500°C. The element dimensions were 400 µm x 400 µm x 300 µm. Table 1 clearly shows that products of Sample Nos. 108, 109 and 110 are comparison samples of 4 component system and Sample Nos. 102, 103, 106, 107, 111, 112, 113 and 121 are also comparison samples; all of them were found lacking in stability in practical use, giving rates of resistance change with time at 500°C in excess of 5%. As hereabove described, the samples used for measuring the rates of resistance change with time were sintered after molded in dry pressing, but bead type elements may be used; thus, this invention is not bound by the element manufacturing method. In this embodiment of the present invention, the amount of Zr mixed in, when zirconia balls were used in mixing the raw materials and in mixing the calcined product, was 0.5 atomic % or below on the basis of the thermistor composing elements as 100 atomic % and the amount of Si mixed in, when agate balls were used, was similarly 1 atomic % or below. Of the samples listed in the table above, those containing Si were all obtained by using zirconia gems and stones. Further, ZrO₂ used in this embodiment was a product having Y therein as solid solution, i.e. , partially stabilized zirconia with yttria. As this partially stabilized zirconia with yttria, products available on the market or those supplied by makers as samples were employed in principle, but some of them were synthesized from oxalates. Fig. 1 shows the aforementioned thermistor sealed in glass, in which 1 denotes the thermistor element of this invention; 2, electrode made of Pt as its main component; 3, glass; and 4 slag lead. The reason why the advantage is derived from the use of ZrO₂ having Y therein as solid solution will become apparent from the following description: By utilizing ZrO₂ having 3 mols of Y₂O₃ therein as solid solution (partially stabilized zirconia, hereinafter abbreviated to PSZ), a thermistor sealed in glass having a composition ratio of Mn : Ni : Cr : Zr (PSZ) = 76.0 : 2.0 : 2.0 : 20.0 atomic % was prepared by the method shown in the aforementioned EXAMPLE 1. And for comparison, another thermistor scaled in glass was prepared by separately using Y₂O₃ and ZrO₂ in the same proportion. In Table 2 below, the specific resistances at 25°C and the thermistor constants at 300°C and 500°C of the aforementioned samples are listed. In Table 2, characteristics of 4 component system of Mn-Ni-Cr-Zr system oxide semiconductors (Pat. Appln. No. Sho 58-131265) which have already been offered by this inventors are jointly put up. Fig.2 gives the rates of resistance change with time at 500°C of these thermistors. In this graph, A₁ represents the results obtained by using PSZ in the embodiment of this invention; B₁ gives those in a comparison sample with 4 component system of Mn-Ni-Cr-Zr; and C₁ corresponds to another comparison example in which Y₂O₃ and ZrO₂ were separately added in place of PSZ. The samples have a dimension of 400 µm x 400 µm x 200 µm t . Fig.2 clearly suggests that product of Sample No. 129 made by manufacturing method using PSZ excels those of Sample Nos. 130 and 131 in the stability at high temperatures. Attention directed to the microstructure of the sample reveals that PSZ is existing as junctions or crystal grains themselves of the Mn-Ni-Cr system oxide spinel crystal. On the other hand, with the sample containing Y₂O₃ and ZrO₂ mixed separately at the same time, it has been clarified by analysis of ceramic section by use of an X-ray microanalyzer that ZrO₂ is likewise existing at the junctions of the spinel crystal or as crystal grains, but that Y is not preferentially contained in ZrO₂ as solid solution, but is nearly uniformly dispersed. By the X-ray diffraction, it was impossible to make identification of the Mn-Ni-Cr-Y system oxide. This time, the sensor was manufactured by sealing the element cut off from the block in glass, but it has been confirmed that similar effect is achievable with bead type elements; thus, invention is not bound by sensor manufacturing method. While in this embodiment, mainly zirconium oxide ZY (3 mols) manufactured by Shinnippon Kinzoku-Kagaku, K.K., was used as PSZ, with PSZ having more finely pulverized particle diameters and sharp grain size distributions, which are obtainable by coprecipitation process, stability under the higher temperatures is believed to be more enhanced. <EXAMPLE 2> Next, an embodiment being a composition comprising 5 kinds of metal elements - Mn, Ni, Cr, magnesium (Mg) and Zr, to the sum total of 100 atomic % - is described: It is an oxide semiconductor comprising 5 kinds of metal elements - 60.0--98.5 atomic % of Mn, 0.1-5.0 atomic % of Ni, 0.3-5.0 atomic % of Cr, 0.2-3.5 atomic % of Mg and 0.5-28.0 atomic % of Zr, to the sum total of 100 atomic %. Besides, another embodiment further comprising Si added to tile composition comprising 5 kinds of metal elements - Mn, Ni, Cr, Mg and Zr, to the sum total of 100 atomic % - at a predetermined rate on the basis of the gross amount thereof is described in conjunction with the aforementioned embodiment. Thus, this embodiment offers an oxide semiconductor for a thermistor further comprising Si added to the composition comprising 5 kinds of metal elements - 60.0-98.5 atomic % of Mn, 0.1-5.0 atomic % of Ni, 0.3-5.0 atomic % of Cr, 0.2-3.5 atomic % of Mg and 0.5-28.0 atomic % of Zr, to the sum total of 100 atomic % - at a rate of 2.0 atomic % or below (exclusive of 0 atomic %) on the basis of the gross amount thereof. These embodiments are described hereunder: First, MnCO₃ , NiO and Cr₂O₃ , being materials available on the market, and ZrO₂ containing MgO therein as solid solution were proportioned to have the compositions represented by respective atomic % values shown in Table 3 below. And thermistors sealed in glass were manufactured through the same process as in EXAMPLE 1, and the initial characteristics at 25°C and the B constants calculated by the aforementioned formula (1) from the resistance values at 300°C and 500°C are put up in the table in conjunction with other. The rates of resistance change with time at 500°C were calculated from the resistance values obtained after a lapse of 1000 hr. Further, Table 4 and Fig.3 give evidences of the effect achieved by the use of ZrO₂ stabilized by containing Mg therein as solid solution, just as in EXAMPLE 1. In this Fig.3, A₂ represents the results achieved with a thermistor sensor manufactured by utilizing the stabilized zirconia: B₂ corresponds to Mn-Ni-Cr-Zr system oxide previously offered, and C₂ refers to one obtained by adding magnesia and zirconia separately. Fig.3 clearly shows that the product of Sample No. 227 in which the stabilized zirconia is used excels those of Sample Nos. 228 and 229 in stability at high temperatures. Of the samples listed in Table 3 above, Sample Nos. 204, 207 and 208 are comparison samples of 4 component system and Sample Nos. 202, 203, 205, 209, 210, 219, 224 and 225 are also comparison samples; all of them were found lacking in stability in practical use, giving the rates of resistance change with time at 500°C in excess of 5%. As hereabove described, the samples used for measuring the rates of resistance change with time were sintered after dry pressing; however, bead type elements may be used; thus, this invention is not bound by the element manufacturing method. In EXAMPLE 2 of the present invention, the amount of Zr mixed in when zirconia balls were used in mixing materials and in milling the calcined product was 0.5 atomic % or below on the basis of the thermistor constituent elements as 100 atomic % and the amount of Si mixed in when agate balls were used was likewise 1 atomic % or below. Of the samples shown in Table 3 above, samples containing Si were obtained by using zirconia balls. The ZrO₂ used in the examples was all obtained by containing Mg therein as solid solution; thus, it was stabilized zirconia. As this stabilized zirconia, mainly, products available on the market or those supplied as samples by material makers were employed in principle, but some of them used were synthesized from oxalates. The microstructure of ceramic, like the one in the previous example, is composed of two phases of Mn-Ni-Cr system oxide spinel crystal and ZrO₂ . <EXAMPLE 3> Next, an embodiment being a composition comprising 5 kinds of metal elements - Mn, Ni, Cr, calcium (Ca) and Zr, to the sum total of 100 atomic % - is explained: It is an oxide semiconductor comprising 5 kinds of metal elements - 60.0-98.5 atomic % of Mn, 0.1-5.0 atomic % of Ni, 0.3-5.0 atomic % of Cr, 0.2-3.5 atomic % of Ca and 0.5-28.0 atomic % of Zr, to the sum total of 100 atomic %. Besides, another embodiment further comprising Si added to the composition comprising 5 kinds of metal elements - Mn, Ni, Cr, Ca and Zr, to the sum total of 100 atomic % - at a predetermined rate on the basis of the gross amount thereof is described in conjunction with the aforementioned embodiment. Thus, this embodiment offers an oxide semiconductor for a thermistor further comprising Si added to the composition comprising 5 kinds of metal elements - 60.0-98.5 atomic % of Mn, 0.1-5.0 atomic % of Ni, 0.3-5.0 atomic % of Cr, 0.2-3.5 atomic % of Ca and 0.5-28.0 atomic % of Zr, to the sum total of 100 atomic % - at a rate of 2.0 atomic % or below (exclusive of 0 atomic %) on the basis of the gross amount thereof. These embodiments are described hereunder: First, MnCO₃ , NiO and Cr₂O₃ , being materials available on the market, and ZrO₂ containing CaO therein as solid solution were proportioned to have the compositions represented by respective atomic % values shown in Table 5 below. And thermistors sealed in glass were manufactured through the same process as in EXAMPLE 1, and the initial characteristics at 25°C and the B constants calculated by the aforementioned formula (1) from the resistance values at 300°C and 500°C are put up in the table in conjunction. The rates of resistance change with time at 500°C were calculated from the resistance values obtained after a lapse of 1000 hr. Further, Table 6 and Fig.4 give evidences of the effect achieved by the use of ZrO₂ stabilized by containing Ca therein as solid solution, just as in EXAMPLE 1. In this Fig.4, A₃ represents the results achieved with a thermistor sensor manufactured by utilizing the stabilized zirconia; B₃ corresponds to Mn-Ni-Cr-Zr system oxide previously offered, and C₃ refers to one obtained by adding calcia and zirconia separately. FIG.4 clearly shows that the product of Sample No. 327 produced by the manufacturing method of this invention excels those of Sample Nos. 328 and 329 in stability at high temperatures. Of the samples listed in Table 5 above, Sample Nos. 304, 307 and 308 are comparison samples of 4 component system and Sample Nos. 302, 303, 305, 309, 310, 312 and 320 are also comparison samples; all of them were found lacking in stability in practical use, giving the rates of resistance change with time at 500°C in excess of 5%. As hereabove described, the samples used for measuring the rates of resistance change with time were sintered after dry pressing; however, bead type elements may be used; thus, this invention is not bound by the element manufacturing method. In EXAMPLE 3 of the present invention, the amount of Zr mixed in when zirconia balls were used in mixing materials and in milling the calcined product was 0.5 atomic % or below on the basis of the thermistor composing elements as 100 atomic % and the amount of Si mixed in when agate balls were used was likewise 1 atomic % or below. Of the samples shown in the table above, samples containing Si were obtained by using zirconia balls. The ZrO₂ used in the examples was all obtained by containing Ca therein as solid solution; thus, it was a stabilized zirconia. As this stabilized zirconia, mainly, products available on the market or those supplied as samples by material makers were employed in principle, but some of them used were synthesized from oxalates. The microstructure of ceramic, like the one in the previous example, is composed of two phases of Mn-Ni-Cr system oxide spinel crystal and ZrO₂ . <EXAMPLE 4> Next, an embodiment being a composition comprising 5 kinds of metal elements - Mn, Ni, Cr lanthanum (La) and Zr, to the sum total of 100 atomic % - is described: It is an oxide semiconductor comprising 5 kinds of metal elements - 60.0-98.5 atomic % of Mn, 0.1-5.0 atomic % of Ni, 0.3-5.0 atomic % of Cr, 0.2-5.0 atomic % of La and 0.5-28.0 atomic % of Zr, to the sum total of 100 atomic %. Besides, another embodiment further comprising Si added to the composition comprising 5 kinds of metal elements - Mn, Ni, Cr, La and Zr, to the sum total of 100 atomic % - at a predetermined rate on the basis of the gross amount thereof is described in conjunction with the aforementioned embodiment. Thus, this embodiment offers an oxide semiconductor for a thermistor further comprising Si added to the composition comprising 5 kinds of metal elements - 60.0-98.5 atomic % of Mn, 0.1-5.0 atomic % of Ni, 0.3-5.0 atomic % of Cr, 0.2-5.0 atomic % of La and 0.5-28.0 atomic % of Zr, to the sum total of 100 atomic % - at a rate of 2.0 atomic % or below (exclusive of 0 atomic %) on the basis of the gross amount thereof. These embodiments are described hereunder: First, MnCO₃ , NiO and Cr₂O₃ , being materials available on the market, and ZrO₂ containing La₂O₃ therein as solid solution were proportioned to have the compositions represented by respective atomic % values shown in Table 7 below. And thermistors sealed in glass were manufactured through the same process as in EXAMPLE 1, and the initial characteristics obtained with them at 25°C and the B constants calculated by the aforementioned formula (1) from the resistance values at 300°C and 500°C are put up in the table in conjunction with other data. The rates of resistance change with time at 500°C were calculated from the resistance values obtained after a lapse of 1000 hr. Further, Table 8 below and Fig.5 give evidence of the effect achieved by the use of ZrO₂ stabilized by containing La therein as solid solution, just as in EXAMPLE 1. In this Fig.5, A₄ represents the results achieved with a thermistor sensor manufactured by utilizing the stabilized zirconia; B₄ corresponds to Mn-Ni-Cr-Zr system oxide previously offered, and C₄ refers to one obtained by adding lanthanum oxide and zirconia separately. Fig.5 clearly shows that the product of Sample No. 421 produced by the manufacturing method of this invention excels those of Sample Nos. 422 and 423 in stability at high temperatures. Of the samples listed in Table 7 above, Sample Nos. 405, 413 and 414 are comparison samples of 4 component system and Sample Nos. 402, 403, 407, 409, 411 and 419 are also comparison samples; all of them were found lacking in stability in practical use, giving the rates of resistance change with time at 500°C in excess of 5%. As hereabove described, the samples used for measuring the rates of resistance change with time were sintered after dry pressing; however, bead type elements may be used; thus, this invention is not bound by the element manufacturing method. In EXAMPLE 4 of the present invention, the amount of Zr mixed in when zirconia balls were used in mixing materials and in pulverizing and mixing the calcained product was 0.5 atomic % or below on the basis of the thermistor constituent elements as 100 atomic % and the amount of Si mixed in when agate balls were used was likewise 1 atomic % or below. Of the samples shown in the table above, samples containing Si were obtained by using zirconia balls. The ZrO₂ used in the examples was all obtained by containing La therein as solid solution; thus, it was stabilized zirconia. As this stabilized zirconia, mainly products available on the market or those supplied as samples by material makers were employed in principle, but some of them used were synthesized from oxalates. The microstructure of ceramic, like the one in the previous example, is composed of two phases of Mn-Ni-Cr system oxide spinel crystal and ZrO₂ . <EXAMPLE 5> Next, an embodiment being a composition comprising 5 kinds of metal elements - Mn, Ni, Cr, ytterbium (Yb) and Zr, to the sum total of 100 atomic % - is described: It is an oxide semiconductor comprising 5 kinds of metal elements - 60.0-98.5 atomic % of Mn, 0.1-5.0 atomic % of Ni, 0.3-5.0 atomic % of Cr, 0.2-5.0 atomic % of Yb and 0.5-28.0 atomic % of Zr, to the sum total of 100 atomic %. Besides, another embodiment further comprising Si added to the composition comprising 5 kinds of metal elements - Mn, Ni, Cr, Yb and Zr, to the sum total of 100 atomic % - at a predetermined rate on the basis of the gross amount thereof is described in conjunction with the aforementioned embodiment. Thus, this embodiment offers an oxide semiconductor for a thermistor further comprising Si added to the composition comprising 5 kinds of metal elements - 60.0-98.5 atomic % of Mn, 0.1-5.0 atomic % of Ni, 0.3-5.0 atomic % of Cr, 0.2-5.0 atomic % of Yb and 0.5-28.0 atomic % of Zr, to the sum total of 100 atomic % - at a rate of 2.0 atomic % or below (exclusive of 0 atomic %) on the basis of the gross amount thereof. These embodiments are described hereunder: First, MnCO₃ , NiO and Cr₂O₃, being materials available on the market, and ZrO₂ containing Y₂O₃ therein as solid solution were proportioned to have the compositions represented by respective atomic % values shown in Table 9 below. And thermistors sealed in glass were manufactured through the same processes as in EXAMPLE 1, and the initial characteristics obtained with them at 25°C and the B constants calculated by the aforementioned formula (1) from the resistance values at 300°C and 500°C are put up in the table in conjunction with other data. The rates of resistance changes with time at 500°C were calculated from the resistance values obtained after a lapse of 1000 hr. Further, Table 10 below and Fig.6 give evidences of the effect achieved by the use of ZrO₂ stabilized by containing Yb therein as solid solution, just as in EXAMPLE 1. In this Fig. 6, A₅ represents the results achieved with a thermistor sensor manufactured by utilizing the stabilized zirconia; B₅ corresponds to Mn-Ni-Cr-Zr system oxide previously offered, and C 5 refers to the curve obtained by adding ytterbium oxide and zirconia separately. Fig. 6 clearly shows that the product of Sample No. 822 produced by the manufacturing method of this invention excels those of Sample Nos. 823 and 824 in stability at high temperatures. Of the samples listed in Table 9 above, Sample Nos. 809, 810 and 813 are comparison samples of 4 component system and Sample Nos. 802, 803, 806, 807, 811, 812, 817 and 821 are also comparison samples; all of them were found lacking in stability in practical use, giving the rates of resistance change with time at 500°C in excess of 5%. As hereabove described, the samples used for measuring the rates of resistance change with time were sintered after dry pressing; however, bead type elements may be used; thus, this invention is not bound by the element manufacturing method. In EXAMPLE 5 of the present invention, the amount of Zr mixed in when zirconia balls were used in mixing materials and in milling the calcined product was 0.5 atomic % or below on the basis of the thermistor constituent elements at 100 atomic % and the amount of Si mixed in, when agate balls were used was likewise 1 atomic % or below. Of the samples shown in the table above, samples containing Si were obtained by using zirconia balls. The ZrO₂ used in the examples was all obtained by containing Yb therein as solid solution; thus, it was a stabilized zirconia. As this stabilized zirconia, mainly products available on the market or those supplied as samples by material makers were employed in principle, but some of them used were synthesized from oxalates. The microstructure of ceramic, like the one in the previous example, is composed of two phases of Mn-Ni-Cr system oxide spinel crystal and ZrO₂ . It may be deduced in sum that in all compositions of EXAMPLES 1 through 5, the addition of the stabilized zirconia effects to stabilize the thermistor at high temperatures. The effect of addition of SiO₂ is evidenced in the high density due to accelerated sintering and the control of specific resistance. The limitation for the aforementioned composition range is set regarding the rate of resistance change with time within + 5% (after a lapse of 1000 hr) in high temperature life test as the standard, as applied in Tables 1, 3, 5, 7 and 9; products which give values in excess of + 5% were excluded from the acceptable range regarding them as of lacking in reliability. INDUSTRIAL APPLICABILITY As described in the foregoing, the oxide semiconductors for thermistors have excellent characteristics as temperature sensors for use at intermediary and high temperature ranges; that is, giving the rate of resistance change with time at temperatures of 200--500°C as small as within + 5%, it is most suitable for temperature measurement where high reliability is required at high temperatures. Its utility value is highly appreciated in such application field as temperature control of electronic ranges and preheater pots of petroleum fan heaters, etc..

Claims: An oxide semiconductor for a thermistor made of a sintered mixture of metal oxides and used as a temperature sensor, comprising 5 kinds of metal elements - 60.0-98.5 atomic % of manganese (Mn), 0.1-5.0 atomic % of nickel (Ni), 0.3-5.0 atomic % of chromium (Cr), 0.2-5.0 atomic % of yttrium (Y) and 0.5-28.0 atomic % of zirconium (Zr), to the sum total of 100 atomic %. An oxide semiconductor for a thermistor in accordance with Claim 1 wherein said oxide semiconductor for a thermistor is constituted by utilizing stabilized zirconia ( ZrO₂ ) containing yttria ( Y₂O₃ ) therein as solid solution. An oxide semiconductor for a thermistor made of a sintered mixture of metal oxides and used as a temperature sensor, comprising 5 kinds of metal elements - 60.0-98.5 atomic % of manganese (Mn), 0.1-5.0 atomic % of nickel (Ni), 0.3-5.0 atomic % of chromium (Cr), 0.2-5.0 atomic % of yttrium (Y) and 0.5-28.0 atomic % of zirconium (Zr), to the sum total of 100 atomic % - and which further comprises silicon (Si) added to said constituent metal elements at a rate of 2.0 atomic % or below (exclusive of 0 atomic %) on the basis of the gross amount thereof. An oxide semiconductor for a thermistor in accordance with Claim 3 wherein said oxide semiconductor for a thermistor is constituted by utilizing stabilized zirconia ( ZrO₂ ) containing yttria ( Y₂O₃ ) therein as solid solution. An oxide semiconductor for a thermistor made of a sintered mixture of metal oxides and used as a temperature sensor, comprising 5 kinds of metal elements - 60.0-98.5 atomic % of manganese (Mn), 0.1-5.0 atomic % of nickel (Ni), 0.3-5.0 atomic % of chromium (Cr), 0.2-3.5 atomic % of magnesium (Mg) and 0.5-28.0 atomic % of zirconium (Zr), to the sum total of 100 atomic %. An oxide semiconductor for a thermistor in accordance with Claim 5 wherein said oxide semiconductor for a thermistor is constituted by utilizing stabilized zirconia ( ZrO₂ ) containing magnesia (MgO) therein as solid solution. An oxide semiconductor for a thermistor made of a sintered mixture of metal oxides and used as a temperature sensor, comprising 5 kinds of metal elements - 60.0-98.5 atomic % of manganese (Mn), 0.1-5.0 atomic % of nickel (Ni), 0.3-5.0 atomic % of chromium (Cr), 0.2-3.5 atomic % of magnesium (Mg) and 0.5-28.0 atomic % of zirconium (Zr) , to the sum total of 100 atomic % - and which further comprises silicon (Si) added to said constituent metal elements at a rate of 2.0 atomic % or below (exclusive of 0 atomic %) on the basis of the gross amount thereof. An oxide semiconductor for a thermistor in accordance with Claim 7 wherein said oxide semiconductor for a thermistor is constituted by utilizing stabilized zirconia ( ZrO₂ ) containing magnesia (MgO) therein as solid solution. An oxide semiconductor for a thermistor made of a sintered mixture of metal oxides and used as a temperature sensor, comprising 5 kinds of metal elements - 60.0-98.5 atomic % of manganese (Mn), 0.1-5.0 atomic % of nickel (Ni), 0.3-5.0 atomic % of chromium (Cr), 0.2-3.5 atomic % of calcium (Ca) and 0.5-28.0 atomic % of zirconium (Zr), to the sum total of 100 atomic %. An oxide semiconductor for a thermistor in accordance with Claim 9 wherein said oxide semiconductor for a thermistor is constituted by utilizing stabilized zirconia ( ZrO₂ ) containing calcia (CaO) therein as solid solution. An oxide semiconductor for a thermistor made of a sintered mixture of metal oxides and used as a temperature sensor, comprising 5 kinds of metal elements - 60.0-98.5 atomic % of manganese (Mn), 0.1-5.0 atomic % of nickel (Ni), 0.3-5.0 atomic % of chromium (Cr), 0.2-3.5 atomic % of calcium (Ca) and 0.5-28.0 atomic % of zirconium (Zr), to the sum total of 100 atomic % - and which further comprises silicon (Si) added to said constituent metal elements at a rate of 2.0 atomic % or below (exclusive of 0 atomic %) on the basis of the gross amount thereof. An oxide semiconductor for a thermistor in accordance with Claim 11 wherein said oxide semiconductor for a thermistor is constituted by utilizing stabilized zirconia ( ZrO₂ ) containing calcia (CaO) therein as solid solution. An oxide semiconductor for a thermistor made of a sintered mixture of metal oxides and used as a temperature sensor, comprising 5 kinds of metal elements - 60.0-98.5 atomic % of manganese (Mn), 0.1-5.0 atomic % of nickel (Ni), 0.3-5.0 atomic % of chromium (Cr), 0.2-5.0 atomic % of lanthanum (La) and 0.5-28.0 atomic % of zirconium (Zr), to the sum total of 100 atomic %. An oxide semiconductor for a thermistor in accordance with Claim 13 wherein said oxide semiconductor for a thermistor is constituted by utilizing stabilized zirconia ( ZrO₂ ) containing lanthanum oxide ( La₂O₃ ) therein as solid solution. An oxide semiconductor for a thermistor made of a sintered mixture of metal oxides and used as a temperature sensor, comprising 5 kinds of metal elements - 60.0-98.5 atomic % of manganese (Mn), 0.1-5.0 atomic % of nickel (Ni), 0.3-5.0 atomic % of chromium (Cr), 0.2-5.0 atomic % of lanthanum (La) and 0.5-28.0 atomic % of zirconium (Zr), to the sum total of 100 atomic % - and which further comprises silicon (Si) added to said constituent metal elements at a rate of 2.0 atomic % or below (exclusive of 0 atomic %) on the basis of the gross amount thereof. An oxide semiconductor for a thermistor in accordance with Claim 15 wherein said oxide semiconductor for a thermistor is constituted by utilizing stabilized zirconia ( ZrO₂ ) containing lanthanum oxide ( La₂O₃ ) therein as solid solution. An oxide semiconductor for a thermistor made of a sintered mixture of metal oxides and used as a temperature sensor, comprising 5 kinds of metal elements - 60.0-98.5 atomic % of manganese (Mn), 0.1-5.0 atomic % of nickel (Ni), 0.3-5.0 atomic % of chromium (Cr), 0.2-5.0 atomic % of ytterbium (Yb) and 0.5-28.0 atomic % of zirconium (Zr), to the sum total of 100 atomic %. An oxide semiconductor for a thermistor in accordance with Claim 17 wherein said oxide semiconductor for a thermistor is constituted by utilizing stabilized zirconia ( ZrO₂ ) containing ytterbium oxide ( Yb₂O₃ ) therein as solid solution. An oxide semiconductor for a thermistor made of a sintered mixture of metal oxides and used as a temperature sensor, comprising 5 kinds of metal elements - 60.0-98.5 atomic % of manganese (Mn), 0.1-5.0 atomic % of nickel (Ni), 0.3-5.0 atomic % of chromium (Cr), 0.2-5.0 atomic % of ytterbium (Yb) and 0.5-28.0 atomic % of zirconium (zr) , to the sum total of 100 atomic % - and which further comprises silicon (Si) added to said constituent metal clements at a rate of 2.0 atomic % or below (exclusive of 0 atomic %) on the basis of the gross amount thereof. An oxide semiconductor for a thermistor in accordance with Claim 19 wherein said oxide semiconductor for a thermistor is constituted by utilizing stabilized zirconia ( ZrO₂ ) containing ytterbium oxide ( Yb₂o₃ ) therein as solid solution. A manufacturing method of an oxide semiconductor for a thermistor made of a sintered mixture of metal oxides and used as a temperature sensor, characterized in that as the starting material, stabilized zirconia ( ZrO₂ ) containing yttria ( Y₂O₃ ) is used in manufacturing an oxide semiconductor for a thermistor which comprises 5 kinds of metal elements - 60.0-98.5 atomic % of manganese (Mn), 0.1 -5.0 atomic % of nickel (Ni), 0.3-5.0 atomic % of chromium (Cr), 0.2-5.0 atomic % of yttrium (Y) and 0.5-28.0 atomic % of zirconium (Zr), to the sum total of 100 atomic %. A manufacturing method of an oxide semiconductor for a thermistor made of a sintered mixture of metal oxides and used as a temperature sensor, characterized in that as the starting material, stabilized zirconia ( ZrO₂ ) containing yttria ( Y₂O₃ ) is used in manufacturing an oxide semiconductor for a thermistor which comprises 5 kinds of metal elements - 60.0-98.5 atomic % of manganese (Mn), 0.1 -5.0 atomic % of nickel (Ni), 0.3-5.0 atomic % of chromium (Cr) , 0.2-5.0 atomic % of yttrium (Y) and 0.5-28.0 atomic % of zirconium (Zr), to the sum total of 100 atomic % - and which further comprises silicon (Si) added to said constituent metal elements at a rate of 2.0 atomic % or below (exclusive of 0 atomic %) on the basis of the gross amount thereof. A manufacturing method of an oxide semiconductor for a thermistor made of a sintered mixture of metal oxides and used as a temperature sensor, characterized in that as the starting material, stabilized zirconia ( ZrO₂ ) containing magnesia (MgO) is used in manufacturing an oxide semiconductor for a thermistor which comprises 5 kinds of metal elements - 60.0-98.5 atomic % of manganese (Mn), 0.1 -5.0 atomic % of nickel (Ni), 0.3-5.0 atomic % of chromium (Cr), 0.2-3.5 atomic % of magnesium (Mg) and 0.5-28.0 atomic % of zirconium (Zr), to the sum total of 100 atomic %. A manufacturing method of an oxide semiconductor for a thermistor made of a sintered mixture of metal oxides and used as a temperature sensor, characterized in that as the starting material, stabilized zirconia ( ZrO₂ ) containing magnesia (MgO) is used in manufacturing an oxide semiconductor for a thermistor which comprises 5 kinds of metal elements - 60.0-98.5 atomic % of manganese (Mn), 0.1 -5.0 atomic % of nickel (Ni), 0.3-5.0 atomic % of chromium (Cr) , 0.2-3.5 atomic % of magnesium (Mg) and 0.5-28.0 atomic % of zirconium (Zr), to the sum total of 100 atomic % - and which further comprises silicon (Si) added to said constituent metal elements at a rate of 2.0 atomic % or below (exclusive of 0 atomic %) on the basis of the gross amount thereof. A manufacturing method of an oxide semiconductor for a thermistor made of a sintered mixture of metal oxides and used as a temperature sensor, characterized in that as the starting material, stabilized zirconia ( ZrO₂ ) containing calcia (CaO) is used in manufacturing an oxide semiconductor for a thermistor which comprises 5 kinds of metal elements - 60.0-98.5 atomic % of manganese (Mn), 0.1 -5.0 atomic % of nickel (Ni), 0.3-5.0 atomic % of chromium (Cr), 0.2-3.5 atomic % of calcium (Ca) and 0.5-28.0 atomic % of zirconium (Zr), to the sum total of 100 atomic %. A manufacturing method of an oxide semiconductor for a thermistor made of a sintered mixture of metal oxides and used as a temperature sensor, characterized in that as the starting material, stabilized zirconia ( ZrO₂ ) containing calcia (CaO) is used in manufacturing an oxide semiconductor for a thermistor which comprises 5 kinds of metal elements - 60.0-98.5 atomic % of manganese (Mn), 0.1 -5.0 atomic % of nickel (Ni), 0.3-5.0 atomic % of chromium (Cr), 0.2-3.5 atomic % of calcium (Ca) and 0.5-28.0 atomic % of zirconium (Zr) , to the sum total of 100 atomic % - and which further comprises silicon (Si) added to said constituent metal elements at a rate of 2.0 atomic % or below (exclusive of 0 atomic %) on the basis of the gross amount thereof. A manufacturing method of an oxide semiconductor for a thermistor made of a sintered mixture of metal oxides and used as a temperature sensor, characterized in that as the starting material, stabilized zirconia ( ZrO₂ ) containing lanthanum oxide ( La₂O₃ ) is used in manufacturing an oxide semiconductor for a thermistor which comprises 5 kinds of metal elements - 60.0-98.5 atomic % of manganese (Mn), 0.1 -5.0 atomic % of nickel (Ni), 0.3-5.0 atomic % of chromium (Cr), 0.2-5.0 atomic % of lanthanum (La) and 0.5-28.0 atomic % of zirconium (Zr), to the sum total of 100 atomic %. A manufacturing method of an oxide semiconductor for a thermistor made of a sintered mixture of metal oxides and used as a temperature sensor, characterized in that as the starting material, stabilized zirconia ( ZrO₂ ) containing lanthanum oxide ( La₂O₃ ) is used in manufacturing an oxide semiconductor for a thermistor which comprises 5 kinds of metal elements - 60.0-98.5 atomic % of manganese (Mn), 0.1 -5.0 atomic % of nickel (Ni), 0.3-5.0 atomic % of chromium (Cr), 0.2-5.0 atomic % of lanthanum (La) and 0.5-28.0 atomic % of zirconium (Zr), to the sum total of 100 atomic % - and which further comprises silicon (Si) added to said constituent metal elements at a rate of 2.0 atomic % or below (exclusive of 0 atomic %) on the basis of the gross amount thereof. A manufacturing method of an oxide semiconductor for a thermistor made of a sintered mixture of metal oxides and used as a temperature sensor, characterized in that as the starting material, stabilized zirconia ( ZrO₂ ) containing ytterbium oxide ( Yb₂O₃ ) is used in manufacturing an oxide semiconductor for a thermistor which comprises 5 kinds of metal elements - 60.0-98.5 atomic % of manganese (Mn) , 0.1 -5.0 atomic % of nickel (Ni), 0.3-5.0 atomic % of chromium (Cr), 0.2-5.0 atomic % of ytterbium (Yb) and 0.5-28.0 atomic % of zirconium (Zr), to the sum total of 100 atomic %. A manufacturing method of an oxide semiconductor for a thermistor made of a sintered mixture of metal oxides and used as a temperature sensor, characterized in that as the starting material, stabilized zirconia ( ZrO₂ ) containing ytterbium oxide ( Yb₂O₃ ) is used in manufacturing an oxide semiconductor for a thermistor which comprises 5 kinds of metal elements - 60.0-98.5 atomic % of manganese (Mn), 0.1 -5.0 atomic % of nickel (Ni), 0.3-5.0 atomic % of chromium (Cr), 0.2-5.0 atomic % of ytterbium (Yb) and 0.5-28.0 atomic % of zirconium (Zr), to the sum total of 100 atomic % - and which further comprises silicon (Si) added to said constituent metal elements at a rate of 2.0 atomic % or below (exclusive of 0 atomic %) on the basis of the gross amount thereof.

Inventors: HATA, TAKUOKI 728-2 D-325, NEYA
Applicants: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
Application year: 1985
Main classification: H01C7
IPC codes: H01C7