SEMICONDUCTOR LIGHT-EMITTING DEVICE

Abstract: A semiconductor light-emitting device according to the invention is made by forming an undoped In 1-X Ga X As 1-Y P Y ac­ tive layer (3) on an n-InP clad layer (2), a p-In 1-X Ga X As 1-Y P Y ac­ tive layer (4) on the undoped active layer, and a p-n junction position at the interface between the n-InP layer (2) and the undoped In 1-X Ga X As 1-Y P Y active layer (3) or in the neighbour­ hood thereof. By use of this structure, the heretofore inevitable problem of a remote junction is overcome, and the half-value width of the light-emitting spectrum is reduced. Therefore, the semiconductor light-emitting device provides a higher re­ sponse frequency and a larger light-emitting output than a conventional semiconductor light-emitting device.

Description: This invention relates to a method of fabricating a semiconductor light-emitting device. In a prior art high-speed responding light-emitting diode of double-hetero structure type of In 1-X Ga X As 1-Y P Y /InP, it was conventional practice to dope a p-In 1-X Ga X As 1-Y P Y active layer with Zn, which is a p-type impurity, at a high density of 3-10x10¹⁸cm⁻³ and to make this active layer grow epitaxially on an n-type InP clad layer to thereby increase the response speed (see, for example, Electronics Letters, 1983, Vol.19 No. 23, pp 963-965 and The Preprints 6P-H-8 for 30th Lectures of Federation of Applied Physcis Societies, Spring 1983). Referring to Fig. 1 of the drawings of the present application, an n-InP substrate 1 is doped with Te at a density of 1 x 10¹⁸cm⁻³; a p-InP clad layer is doped with Zn at a density of 3 x 10¹⁸cm -cm , and a p-In 1-W Ga W As 1-Z P Z contact layer 6 is doped with Zn at a density of 3 x 10¹⁸cm⁻³. Fig. 2 shows the carrier density profile of the layers of the light-emitting diode having the structure shown in Fig. 1. In Fig. 2, numerals 1,2,4,5 and 6 along the horizontal axis correspond to the reference numerals 1,2,4, 5 and 6 denoting the layers of the structure of Fig. 1. Since the p-In 1-X Ga X As 1-Y P Y active layer 4 is doped with Zn, a p-type impurity, at a high density, Zn is diffused into the n-InP clad layer 2 during the epitaxial growth as shown by the broken line in Fig. 2, to make a portion of the n-InP clade layer 2 p-InP. For this reason, a remote junction is produced in which the p-n junction is shifted from the interface between the p-In 1-X Ga X As 1-Y P Y active layer 4 and the n-InP clad layer 2 into the n-InP clad layer 2. Fig. 3 shows the energy band profile of the layers of Fig. 2. In Fig. 3, reference numerals 1,2,4,5 and 6 along the horizontal axis correspond to the reference numerals 1,2,4,5 and 6, respectively, denoting the layers in Figs. 1 and 2. When the junction is shifted into the n-InP clad layer 2 as shown in Fig. 3, a portion of the carriers flow out from the p-In 1-X Ga X As 1-Y P Y active layer 4, which is the light-emitting region, into the n-InP clad layer, to thereby reduce the light-emitting output. Furthermore, since the remote junction makes the carrier enclosure incomplete, reduction in the response speed is inevitable, even when the p-type impurity Zn is doped at a high density. To avoid the remote junction, it is conventional to provide sequentially the n-InP layer 2 on the n-InP substrate 1, the undoped In 1-X Ga X As 1-Y P Y active layer 3 on the n-InP layer 2, a p-InP clad layer 5' doped with Zn at a high density on the active layer 3, and the p-In 1-W Ga W As 1-Z P Z contact layer 6 on the p-InP clad layer 5'. Fig. 4 shows the carrier density profile of a light-emitting diode having the sequentially provided layers as described above. As shown by a broken line in Fig. 4, a p-n junction is formed in the active layer 3 by diffusing Zn from the p-InP clad layer 5' into the In 1-X Ga X As 1-Y P Y active layer 3 during the growth of the crystal. In the light-emitting device produced by the method described above, however, a half-value width of the light-emitting spectrum is enlarged, as shown in the curve (b) of Fig. 5. This is because, in the above-described method, Zn is diffused substantially over the entire region of the In 1-X Ga X As 1-Y P Y active layer 3 which distorts the crystal of the In 1-X Ga X As 1-Y P Y active layer, or, even in the case where Zn is not diffused over the entire region, the p-n junction is formed in about the middle of the In 1-X Ga X As 1-Y P Y active layer 3. The light-emitting device produced by the method described above is, in spite of its high response speed, not suitable for high speed data transmission through optical fibres, because of the large half-value width of its light-emitting spectrum. That is, the data transmittable distance through optical fibres depends upon the half-value width of the light-emitting spectrum of the light-emitting device as shown in Figure 6. In the case where the half-value width is 160 nm, as shown by the curve (b) in Fig. 5, data transmission over a distance of 0.8 km or larger is practically impossible, as shown by a broken line in Fig. 6. The conventional light-emitting device produced by Zn diffusion as described above has a further disadvantage that uneven Zn diffusion in the In 1-X Ga X As 1-Y P Y active layer 3 in the production process causes variation in the characteristics of the device. According to the present invention there is provided a method of fabricating a semiconductor light-emitting device comprising providing an n-InP clad layer, forming an undoped In 1-X Ga X As 1-Y P Y active layer on the n-InP clad layer, and forming a p-In 1-X Ga X As 1-Y P Y active layer on the undoped In 1-X Ga X As 1-Y P Y active layer, whereby diffusion of dopants from the p-In 1-X Ga X As 1-Y P Y active layer into the formerly undoped In 1-X Ga X As 1-Y P Y active layer forms a p-n junction in the active layer adjacent the interface between the n-InP layer and the In 1-X Ga X As 1-Y P Y active layer. The present invention provides a method of fabricating a semiconductor light-emitting device having an increased response speed and an intensified light-emitting output. It can be used to form a semiconductor light-emitting device having a narrowed half value width of the light-emitting spectrum. The method of the present invention results in a structure which overcomes the difficulty of the conventional light-emitting device, i.e. the remote junction, in which the p-n junction position is formed within the n-InP clad layer. Accordingly, the light-emitting device produced by a method according to the present invention has important characteristics such as high response speed and light-emitting output and a small half value width of light-emitting spectrum, and can be used as a semiconductor light-emitting device suitable for high speed data transmission through optical fibres. Furthermore, since the p-n junction position is formed easily on the interface, or in its neighbourhood, between the n-InP clad layer and the undoped In 1-X Ga X As 1-Y P Y active layer, control is easily performed during growth of the crystal, and the yield rate and the reliability of the device can be greatly increased. The invention will be better understood from the following description taken in connection with the accompanying drawings in which: Fig. 1 is a sectional view showing the structure of a conventional semiconductor light-emitting device; Fig. 2 is an illustration of the carrier density profile of the layers of the device shown in Fig. 1 and the junction position thereof; Fig. 3 is an illustration of the band profile of the layers of the device shown in Fig. 1; Fig. 4 is an illustration of the carrier density profile of the layers of another conventional semiconductor light-emitting device and the junction position thereof; Fig. 5 is a characteristics diagram of the light-emitting spectrum; Fig. 6 is a graph showing the relationship between the transmittable distance and the half value width of the light-emitting spectrum during high speed modulation; Fig. 7 is a sectional view shooing the structure of a device formed in accordance with an embodiment of the present invention; Fig. 8 is an illustration of the carrier density profile of the layers of the device shown in Fig. 7 and the junction position thereof; Fig. 9 is a current-light-emitting output characteristics diagram of the semiconductor light-emitting device; Fig. 10 is a current-response frequency characteristics diagram of the semiconductor light-emitting device; Fig. 11A is a graph showing the relationship between the depth of diffusion of a dopant within the undoped In 1-X Ga X As 1-Y P Y active layer during growth of crystal and the carrier density in the case where Zn is used as the p-type dopant; and Fig. 11B is a graph showing the death of diffusion of a dopant within the undoped In 1-X Ga X As 1-Y P Y active layer during growth of crystal and the carrier density in the case where any of Cd, Mg and Be is used as the p-type dopant. With reference now to the drawings, a preferred embodiment of the present invention will be described in detail. Fig. 7 shows a structure of a semiconductor light-emitting device according to the present invention, in which reference numeral 1 denotes an n-InP substrate doped with Te in the density of 1 x 10¹⁸ cm⁻³. On the n-InP substrate 1, there is formed an n-InP clad layer 2 doped with Te at a density of 1 x 10¹⁸ cm⁻³, in the thickness of 5 µm, by epitaxial growth. On the n-InP clad layer 2, there is formed an undoped In 1-X Ga X As 1-Y P Y active layer 3 in the thickness of 0.5 µm by epitaxial growth. On the In 1-X Ga X As 1-Y P Y active layer 3, there is formed a p-In 1-X Ga X As 1-Y P Y active layer 4 doped with Zn at a density of 5 x 10¹⁸ cm⁻³, in the thickness of 1 µm, by epitaxial growth. On the p-In 1-X Ga X As 1-Y P Y active layer 4, there is formed a p-InP clad layer 5 doped with Zn at a density of 3 x 10¹⁸ cm⁻³, in the thickness of 1 µm, by epitaxial growth. On the p-InP clad layer 5, there is formed a p-In 1-W Ga W As 1-Z P Z contact layer 6 doped with Zn at a density of 3 x 10¹⁸ cm⁻³, in the thickness of 1 µm, by epitaxial growth. In this manner, these layers 2, 3, 4, 5 and 6 are formed sequentially by epitaxial growth. As described above, when the undoped In 1-X Ga X As 1-Y P Y active layer 3 is epitaxially grown in the thickness of 0.5 µm and, thereafter, the Zn-doped p-In 1-X Ga X As 1-Y P Y active layer 4 and p-InP clad layer 5 are sequentially epitaxially grown, Zn in the Zn-doped p-In 1-X Ga X As 1-Y P Y active layer 4 is diffused in the thickness of 0.5 µm into the undoped In 1-X Ga X As 1-Y P Y active layer 3. Fig. 8 shows the carrier density profile of the layers of the semiconductor light-emitting device of Fig. 7, in which Zn of the p-In 1-X Ga X As 1-Y P Y active layer 4 is diffused as shown by the broken line and a p-n junction is formed in the neighborhood of the interface between the In 1-X Ga X As 1-Y P Y active layer 3 and the n-InP clad layer 2. By the p-n junction formed in this manner, the injected carriers are confined completely within the In 1-X Ga X As 1-Y P Y active layer 3 and 4 without flowing out into the n-InP clad layer 2. For this reason, all the carriers contribute to emission of light. In fact, as shown in Fig. 9, the semiconductor light-emitting device according to the present invention provides a markedly larger light-emitting output shown by the solid line than that provided by the conventional semiconductor light-emitting device (shown by the broken line). Fig. 10 shows the relationship of the response frequency to the current flowing in the semiconductor light-emitting device. Since all the injected carriers are confined within the In 1-X Ga X As 1-Y P Y active layers 3 and 4 in the present device, the response frequency is much higher in the semiconductor light-emitting device according to the present invention (shown by the solid line) than in the conventional device (shown by the broken line) as shown in Fig. 10. Furthermore, the half value width (120 nm) of the light-emitting spectrum of the semiconductor light-emitting device according to the present invention shown by the curve (a) in Fig. 5 is much smaller than the half value width (160 nm) of that of the conventional device shown by the curve (b) in Fig. 5. Accordingly, as clearly seen from Fig. 6, the semiconductor light-emitting device according to the present invention provides a markedly increased transmittable distance. In the present invention, the substrate and the layers thereon may take other values of thicknesses and carrier densities than those defined hereinabove with respect to the preferred embodiment. For example, the carrier density of the n-InP substrate 1 may be 1 x 10¹⁸ - 5 x 10¹⁸ cm⁻³ in which bulk resistance is low, the carrier density of the n-InP clad layer 2 may be 1 x 10¹⁸ - 5 x 10¹⁸ cm⁻³, and the dopant of said two layers may be Sn or S as well as Te. Further, the thickness of the n-InP clad layer 2 may be 2 - 20 µm which is easily controllable during growth of the crystal. While the quantity of dopant of the p-In 1-X Ga X As 1-Y P Y active layer 4 is easy to control when the carrier density is made 1 x 10¹⁸ cm⁻³ or higher for high speed response, the control becomes difficult at a carrier density of 1 x 10¹⁹ cm⁻³ or higher, because the depth of diffusion becomes too large. Also, at a carrier density of 1 x 10¹⁹ cm⁻³ or higher, the crystal is distorted and light-emitting efficiency is reduced. Therefore, the preferred carrier density of the p-In 1-X Ga X As 1-Y P Y active layer 4 is 1 x 10¹⁸ - 1 x 10¹⁹ cm⁻³. While the thickness of the p-In 1-X Ga X As 1-Y P Y active layer 4 may be 0.1 µm or larger for easy control of the thickness of the epitaxial layer, the thickness is preferably 0.1 - 2 µm because the thickness of the layer is required to be equal to or smaller than the diffusion length of the minority carrier (normally of the order of 2 µm). The p-In 1-X Ga X As 1-Y P Y active layer is lattice-matched with the n-Inp clad layer 2 and its band gap energy is in the range from 0.75 eV (for example, X=0.42, Y=0.10) to 1.2 eV (for example, X=0.09, Y=0.80) which is the low loss region of quartz fibre. The p-type dopant of the p-In 1-X Ga X As 1-Y P Y active layer 4 may be any of Cd, Mg and Be as well as Zn. During growth of crystal, the p-type dopant is diffused into the undoped In 1-X Ga X As 1-Y P Y active layer 3 and the depth of its diffusion is substantially proportional to the density of the p-type dopant and is dependent upon the kind of the dopant. Figs. 11A and 11B show the relationship between the depth of diffusion of a dopant into the undoped In 1-X Ga X As 1-Y P Y active layer during growth of crystal and the carrier density. The depth of diffusion of Zn, which is a p-type dopant, shown in Fig. 11A, is several times larger than the depth of diffusion of any of other p-type dopants, such as Cd, Mg and Be, shown in Fig. 11B. Accordingly, the optimum value of the thickness of the undoped In 1-X Ga X As 1-Y P Y active layer 3 is dependent upon the kind and density of the p-type dopant of the p-In 1-X Ga X As 1-Y P Y active layer 4. Accordingly, assuming that the dopant of the p-In 1-X Ga X As 1-Y P Y active layer 4 is Zn and the carrier density of the active layer 4 is P, the optimum range of the thickness of the undoped In 1-X Ga X As 1-Y P Y active layer 3 is, as seen from Fig. 11A, from to and assuming tht the dopant is any of Cd, Mg and Be, the optimum range of the thickness is, as seen from Fig. 11B, from to provided that the carrier density is defined as the number of carriers per cm³. The carrier density of the undoped In 1-X Ga X As 1-Y P Y active layer 3 is preferably 1 x 10¹⁷ cm⁻³ or lower, which is easily achievable and in which yield rate is high during growth of crystal. Further, the undoped In 1-X Ga X As 1-Y P Y active layer 3 is lattice-matched with the n-InP clad layer 2 and its band gap energy is selected in the range from 0.75 eV (for example, X=0.42, Y=0.10) to 1.2 eV (for example, X=0.09, Y=0.80) which is the low loss region of quartz fibre. The carrier density of the p-InP clad layer 5 is taken to be substantially equal to the carrier density of the p-In 1-X Ga X As 1-Y P Y active layer 4, that is, in the range 1 x 10¹⁸ - 1 x 10¹⁹ cm⁻³, and the thickness of the p-InP clad layer 5 is taken in the range 0.2 - 2.0 µm so as to efficiently confine the injected carriers within the undoped In 1-X Ga X As 1-Y P Y active layer 3 and the p-In 1-X Ga X As 1-Y P Y active layer 4. The carrier density of the p-In 1-W Ga W As 1-Z P Z contact layer 6 is taken in the range 1 x 10¹⁸ - 1 x 10¹⁹ cm⁻³ so as to reduce the contact resistance with the p-side electrode metal. The thickness of the p-In 1-W Ga W As 1-Z P Z contact layer 6 is preferably in the range 0.1 - 1.0 µm.

Claims: A method of fabricating a semiconductor light-emitting device comprising providing an n-InP clad layer (2), forming an undoped In 1-X Ga X As 1-Y P Y active layer (3) on the n-InP clad layer, and forming a p-In 1-X Ga X As 1-Y P Y active layer (4) on the undoped In 1-X Ga X As 1-Y P Y active layer (3), whereby diffusion of dopants from the P-In 1-X Ga X As 1-Y P Y active layer (4) into the formerly undoped In 1-X Ga X As 1-Y P Y active layer (3) forms a p-n junction in the active layer (3) adjacent the interface between the n-InP layer (2) and the In 1-X Ga X As 1-Y P Y active layer (3). A method as claimed in claim 1, characterised in that the undoped In 1-X Ga X As 1-Y P Y active layer (3) and the p-In 1-X Ga X As 1-Y P Y active layer (4) are lattice-matched with the n-InP clad layer, and the band gap energy of each of them is in the range from 0.75 eV to 1.2 eV. A method as claimed in claim 1 or claim 2, characterised in that the carrier density of the undoped In 1-X Ga X As 1-Y P Y active layer (3) is 1 x 10¹⁷cm⁻³ or lower, and the carrier density of the p-In 1-X Ga X As 1-Y P Y active layer (4) is in the range from 1 x 10¹⁸cm⁻³ to 1 x 10¹⁹cm⁻³. A method as claimed in any preceding claim, characterised in that the thickness d of the undoped In 1-X Ga X As 1-Y P Y active layer (3) is in the range defined by: where P denotes the carrier density of the p-In 1-X Ga X As 1-Y P Y active layer (4) which is defined as the number of carriers per cm ³ and the values of A and B are A=0.3, B=1.5 when Zn is used as the dopant of the p-In 1-X Ga X As 1-Y P Y active layer (4) and A=0.1, B=0.5 when any one of Cd, Mg and Be is used as the dopant, and the thickness of the p-In 1-X Ga X As 1-Y P Y active layer is in the range from 0.1µm to 2.0µm.

Inventors: OKUDA, HIROSHI C/O OSAKA WORKS OF SUMITOMO
Applicants: SUMITOMO ELECTRIC INDUSTRIES LIMITED
Application year: 1984
Main classification: H01L33
IPC codes: H01S5, H01L33