A PROCESS FOR THE PRODUCTION OF A COMPOUND CRYSTAL

Abstract: In the production of a compound bulk crystal (16) having a convex surface or concave surface by the CVD method, an improvement is achieved by revolving a part of a deposition substrate (14).

Description: " A PROCESS FOR THE PRODUCTION OF A COMPOUND CRYSTAL BAOXGROUND OF TIE INVENTION 1. yield of the Invention This invention relates to z process for the product ion of a compound bulk crystal by the chemical vapor deposition mothod (which will hereinafter be referred to as QVD method). 2. Description of the Prior Art In the CVD method for the production of, for example, a compound AB (A and B being different elements), a OVI) apparatus has hitherto been used as exemplified in Pig. 1. Pig. 1 shows a gaseous phase reactor 1 in which substrate 2 for deposition is provided and the inside is heated at a suitable temperature by means of heater 3. When raw material gases 6 (containing A) and 7 (containing 3) are introduced from raw material gas feed nozzles 4 and 5 into reaction zone s held under suitable reaction conditions (pressure, temperature), A and B react in gaseous phase to deposit bulk crystal 8 of compound AB on substrate 2 for deposition. 9 and 10 are flow meters of raw material gases 6 and 7. In the CVD method as described above, it is ordi nary to use a substrate for deposition, corresponding to a shape of a crystal to be produced. When the deposition product has a plane shape or similar shape as shown in Fig.1, the prior art method offers no problem, but when the deposition product has a hemispherical dome shape or similar shape as shown in Pig. 2, on the other hand, it offers the following problem. Referring to Pig. 2, substrate 11 for deposition has convex surface 12 of hemispherical dome and when raw material gases 6 and 7 each containing A and B are introduced from raw material gas feed nozzles 4 and 5, bulk crystal 13 of a compound AB is deposited on substrate 11. In this case, there occurs an ununiform distribution of thickness in bulk crystal 13 on substrate 11 as shown in Pig. 2, depending on the flow conditions of raw material gases and the surface shape of substrate 11 for deposition. tThat is, a thicker deposition than required takes place, thus resulting in greater loss of the raw materials and taking a longer period of time for growing the crystal, since the thinnest part of deposition constitutes a rate-determining step. This is an important diadvantage of the prior art. SUMMARY OF TBE INVENTION It is an object of the present invention to provide a process for the production of a compound crystal, whereby the disadvantage of the prior art can be overcome. It is another object of the present invention to provide a process for the production of a compound crystal such as GaAs by the CVI) method. It is a further object of the present invention to provide a process for producing a compound bulk crystal having a convex or concave surface with a uniform thickness distribution of deposition, reduced loss of raw materials and shortened period of time for the growth of the crystal. These objects can be attained by a process for the production of a compound bulk crystal having a convex or concave surface by the CVI) method, characterized by revolving a part of a substrate for deposition. BRIEF DESCRIPTION OF TEE DRAWINGS Ehe accompanying drawings are to illustrate the principle and the merits of the present invention in greater detail. Fig. 1 is a cross-sectional view of a CVI) apparatus of the prior art. Fig. 2 is a cross-sectional view of a deposition substrate part in another CVI) apparatus of the prior art. Fig. 3 and Fig. 4 are cross-sectional views of examples of a deposition substrate part in a CVI) apparatus used for the practice of the process according to the present invention. DETAILED DESCRIPTION OF THE INVENTION The inventor has made efforts to overcome the drawbacks of the prior art in the production of a deposited bulk crystal, in particular, having a convex or concave surface by the CVD method and consequently, has found that to this end, it is effective to revolve a part of a deposition substrate. The present invention is based on this discovery. Accordingly, the present invention provides a process for the production of a compound bulk crystal having a convex or concave surface by the CVI) method, characterized by revolving a part of a substrate for deposition. Such a compound bulk crystal is suitable for use as infrared transmission domes. The compound crystal produced by the process of the present invention includes, for example, Group Il-VI com pounds such as ZnS, ZnSe, ZnSxSen x and CdTe, Group III-V compounds such as GaAs and InP, oxides, carbides, nitrides, fluorides and borides such as ZnO, Cay2, MgF2, BN and the like. The present invention will now be illustrated in more detail with reference to the accompaning drawings. Fig. 3 and Fig. 4 are cross-sectional views of examples of a deposition substrate used in the process of the invention. Referring to Fig. 3, in particular, the deposition substrate consists of hemispherical substrate 14 and plane substrate 15, hemispherical substrate 14 being rotatable to fixed plane substrate 15 by means of bearing 9 and driven by revolving and driving gear 17 and driving shaft 18. Fig. 4 shows the same structure except the substrate shape. When the reaction zone is held under suitable reaction conditions (suitable pressure and temperature) and raw material gases 6 and 7 are introduced therein from raw material gas nozzles 4 and 5, bulk crystal 16 with a uniform thickness distribution is deposited on substrate 14 because this substrate is revolved. Pig. 3 and Fig. 4 show only cases of hemispherical substrates for deposition, but the present invention is not intended to be limited to these examples. hat is, the present invention can be applied to any convex or concave surfaces of substrates in addition to the hemispherical surfaces with the similar meritorious effects. The process for the production of compound crys tals as constructed above according to the present invention has the following advantages: (a) Since a part of a deposition substrate having a convex or concave surface is revolved, the thickness of a bulk crystal deposited on the revolved substrate is made uniform and thus there can be obtained a compound bulk crystal with a uniform thickness distribution. (b) Since the thickness distribution of a deposited crystal is uniform, the loss of raw material can be reduced and the period of time required for the growth of the crystal can be shortened, resulting in lowering of the production cost. Example I Using an apparatus as shown in Pig. 3, a domeshaped bulk crystal of ZnS was deposited on hemispherical substrate 14 with a diameter of 190 mum. Raw material gases were supplied from raw material gas feed nozzles 4 and 5 under the following conditions, while revolving hemispherical substrate 14 at a rate of 1 rpm: Metallic Zinc vapor + Ar gas 0.2 Nl/min H gas 1.2 Nl/min Pressure 40 Torr Temperature of Substrate 14 700 oC In 100 hours, a ZnS bulk crystal of 5 mm in thickness was deposited with a uniform thickness distribution on substrate 14. For comparison, when deposition of a ZnS bulk crystal was carried out for 200 hours on substrate 14 under the same conditions as set forth above except stopping substrate 14, there was obtained the bulk crystal with a very ununiform thickness distribution, i.e. partly less than 5 mm (e.g. 4.5 mm) and partly exceeding 5 mm (e.g. 15 mm). Example 2 Using an apparatus as shown in Fig. 4, a dome shaped bulk crystal of ZnSe was deposited on hemispherical (concave) substrate 14 with a diameter of 80 mm. Raw material gases were supplied from raw material gas feed nozzles 4 and 5 under the following conditions, while revolving hemispherical substrate 14 at a rate of 1 rpm: Metallic Zinc vapor + Ar gas 0.2 Nl/min H2Se gas 2 Nl/min Pressure 10 Torr Temperature of Substrate 14 800 C In 70 hours, a ZnSe bulk crystal of 5 mm in thickness was deposited with a uniform thickness distribution on substrate 14.

Claims: CLAIMS: 1. A process for the production of a compound bulk crystal having a convex or concave surface by the CVI) method, characterized by revolving a part of a substrate for deposition. 2. The process of Claim 1, wherein the bulk crystal consists of a compound selected from the group consisting of II-VI compounds, III-V compound, oxides, carbides, nitrides, fluorides and borides. 3. The process of Claim 1, wherein using a substrate for deposition, whose rotary part is hemispherical, a compound bulk crystal having a hemispherical dome shape is produced.

Inventors: NAMBA, HIROKUNI OSAKA WORKS OF SUMITIOMO ELECTRIC
Applicants: SUMITOMO ELECTRIC INDUSTRIES LIMITED
Application year: 1984
Main classification: C30B25
IPC codes: H01L21, C30B25, C30B29