MODULE FOR HIGH VACUUM PROCESSING

Abstract: Module (10) for processing of substrates (20), comprising at least a series of transporters (12) for a floating transport of said substrates (20) in the passage (18) thereof, said transporters (12) successively arranged in direction of movement of said substrates (20), in between said transporters (12) the location of slots (102) of the processing chamber (22) and whereby discharge channels (72), (74), together with discharge compartments (76), (78), discharge ducts (38), (40) and high vacuum pumps (42), (44) establish a removal in sideward direction of the greater part of gaseous transport medium, escaping from said transporters (12).

Description: Nodule for high vacuum processing In the Dutch Patent Application No. 8 203 318 of the Applicant mo¬ dules are described, wherein processing under high vacuum takes place. In these modules a number of transporters are situated, wherein by means of gaseous medium a "floating" transport of substrates is establi— shed and maintained. Thereby is shown, that at the processing side by means of a vacuum pump at least a great part of the gaseous medium is suctioned off. The module according to the invention now provides some supplemen¬ tary structures. —8 liiith the processing under a very high vacuum, such as 10 bar, it is required, that the transport medium, which is used in the transporters for the transport of the substrates by means of gaseous cushions, cannot disturb the very critical processing, taking place in this module. The module according to the invention now is characterized in that at least the transporter sections, positioned at the processing side, on both sides of the supply block, in which the supply takes place of trans¬ port medium to the central passage for the substrates, discharge channels are located, which at the entrance thereof are in open connection with this passage and at the other end are connected with the module compart— ments aside the processing chambers. Thereby by means of walls, situated aside such transporter sections, these discharge channels are almost leak-free separated from this proces¬ sing area, if during the processing a substrate passes through the trans¬ porter passage. These areas as process chambers are through openings in the side- walls of the module and wide discharge channels connected with a high va¬ cuum pump. In that way at this processing side the already minimal quantity of gaseous transport medium is withdrawn immediately. The sidewalls of the discharge channels can be secured together and then function as cover for such a supply block for the deposition of par- ticulates and process material, such as metal particles and particulates, separated from the substrate surface. Another very positive characteristic of these walls is, that as such walls extend towards at least near the imaginary extension of the passage wall of the supply block, the section thereof, creating a passage- wall section, is enlarged in comparance with the adjacent section of these walls. In that way a considerable amount of the heat, transferred to the substrate during the processing, can be withdrawn through this wall. Furthermore, the flaw restriction for the medium, leaking from such a discharge channel, is considerably enlarged, and so the gap width between both passage- walls of the transporter and the sideωalls of the substrate can be larger. iith a passage width of 3 mm of such a discharge channel and a width of only 4-0 micrometer for the gap between this wall and the substrate, in that way in this gap an approximately 10 000 times larger flow restric- tion for the gaseous transport medium is obtained. In consequence of this a leaking away of this medium to the process chambers is almost completely prevented and whereby the minimal quantity of medium, still leaking away, can be discharged easily though the common discharges aside the processing area and such without a disturbing of the processing. The maintaining in these channels of a considerably higher pressure, as compared to the process vacuum, also accomplishes, that the transport medium, leaking away, prevents particulates and processing particles to en¬ ter this transporter section and can be deposited on the passage wall of the cover. Furthermore, in that way also extremely critical passage-wall sec¬ tions of the supply block remain free of particulates and metal deposition. A favourable shape of the channel wall is further, that the wide passage-wall section thereof is to a small degree inclined in the direction of the adjacent smaller sidewall section. As a result, the distance between this passage—wall section and the supply block can be small, for instance less than 1 mm. Such is of great importance to restrict the dimensions of the combination of supply block and cover in the direction of substrate movement. It is of importance, that the deformation of the transporters as the result of heating and cooling thereof during the processing remains minimal. A following positive characteristic is now, that the bearers, which are positioned aside the transporters, also function as a cooling element and at least add to the required cooling of the transporters. Furthermore, that with at least the transporter sections at the processing side the supply of heat towards the passage side αf the substrates is approximately the same as the supply of heat towards the oppositely positioned non— OM passage side of these transporter sections. Furthermore, the transporters can, as seen in the direction of substrate movement, have a greater width at the mounting therof on the bearers, with a resulting increased heat transfer capacity and an impro- ved mounting thereof. With the processing under high temperature, as for instance 350- 500°C. with the anisotropic etching and magnetron sputtering, during the processing the temperature of the substrates has to be approximately the same at both the processing side and the non—processing side. Such to prevent too large deformations of these substrates as the result of dif¬ ferences in expansion thereof. A positive characteristic of the module is now, that as during the processing by means of the process medium the processing side of the sub¬ strate is heated, also the non- processing side of the substrate is heated, for which purpose for instance a micro-wave - or infra-red heating can be used. Thereby again and again in both upper and lower sections of the transporters after a short lasting processing a cooling takes place. In that way is accomplished, that with the use of 30 — 100 transpor- ters with in between located process chambers, the changes in temperature in the substrate are restricted and completely allowable. Furthermore, the temperature of the transporter section at the pro¬ cessing - and non-processing side remains almost the same. As a result, the processing area can remain free of cooling elements, on which particulates and metal particles might deposite. In case a stronger cooling of the transporter sections is required, then the bearers as cooling element can be connected with each other through cooling channels, which are included in these transporter sections. Thereby the use of compressed transport medium as cooling agent, with on such cooling channels the connection via narrow injection channels of the medium supply channels, located in these transporters. The transport medium, supplied to the lower side of the passage, mainly serves for the maintaining of the gaseous cushion, bearing such a substrate, with a relatively high consumption thereof. By means of the sharply reduced quantity of medium, leaking away from the transporter discharge channels towards the processing chambers, and the sharply increased direct discharge of this medium, a processing at the lower side of the passage can take place. - <-. - In consequence of this, the deposition of particulates on the substrate surface from the processing can be sharply reduced. Furthermore, in these transporters on behalf of the supply of the gaseous medium towards the passage, use can be made of the porous segments, as described in the Dutch Patent Application No. 8 300442 of the Appli¬ cant. In the transporters by means of the gaseous medium again and again a cleaning of the substrate surface can take place. In addition, by means of the processing at the lower side of the substrate passage with the aid of the gravity force a removal of loose substrate particles is accomplished. In that way it is now possible, that a series of substrates join each other in the direction of substrate movement, as they pass through the module for processing thereof and whereby the particulates, loosened from the contact surfaces of these substrates, are efficiently removed and caπ- not affect the processing. With an extremely critical processing it is also possible, that the substrates are separately fed through the processing area of the module. Thereby on command a stop can be brought into the passage, against which a substrate can rest, whereas a foregoing substrate is released by this stop. Due to a somewahat higher speed of the foregoing substrate, this stop is able to moαve in the established free area towards its stop position in front of the fallowing substrate. Thereby use can be made of the porous material and whereby in that case the flow of gaseous medium from this stop acts as a buffer to prevent a mechanic contact of this substrate with this stop. Following positive characteristics follow from the description of the following Figures: Figure 1 shows a module according to the invention in a cross sectio¬ nal view. Figure 2 is a partial cross—section of the module according to Fi¬ gure 1 over the processing area thereof. Figure 3 is a partial cross-section of the module according to Fi¬ gure 1 over the transporter section thereof. Figure 4 is a partial longitudinal cross-section of the module accαr— ding to Figure 1 over a number of successive transporter sections thereof. Figure 5 is a partial longitudinal cross—section of the module accor¬ ding to Figure 1 , with the application of an additional cover structure for the transporters. Figure 6 is an enlarged cross-section of two successive transpor¬ ters, which can be included in the module according to Figure 1. Figure 7 is an enlarged detail at the location of the passage of the transporter arrangement according to Figure 5. Figure 8 is an enlarged detail of the mounting of the transporters on the bearers αf the module according to Figure 1. Figure 9 shows a detail of a transporter section, provided with a porous segment. Figure 10 shows an enlarged detail of a transporter section, provi— ded with another type of porous segment. Figure 11 shows an enlarged detail of a transporter section with a segment, in which in the sidwall thereof supply channels for the transport- medium are etched. Figure 12 is a longitudinal section of the transporter section ac— cording to Figure 9. Figure 13 shows a detail of a transporter at the location of the mounting thereof on the bearer. Figure 14 shows a detail αf a transporter section, in which supply channels are located in the sidewall of the porous segment. Figure 15 shows in a top view a transporter arrangement, whereby in between two successive transporters a stop is located, with a substrate resting against it. Figure 16 is the arrangement according to Figure 15, whereby the stop is brought outside the passage. Figure 17 shows the arrangement according to Figure 15 in a longi¬ tudinal section over successive transporters. In Figure 1 the module 10 is shown. In this module the transporter arrangement 12 with the lower section 14 and upper section 16 and passage 18 in between for the transport of substrates therethrough are located. In the lower section 22 of the module at least one source 24 αf processing medium is located for the establishing of plasma, ions, elec¬ trons,etcetera, on behalf of the processing under high vacuum, such as ion implantation, ion milling, plasma etching, electron beam metal deposition, etcetera, with components and assemblies, belonging thereto, such as tar— gets and electrodes 26, whether or not positioned in the processing com¬ partment 28 at the bottom side of passage 18. Thereby within the scope αf the invention any type of high vacuum — and other processing, using such a transporter arrangement, is possible. In the sidewalls 30 and 32 of the module the openings 34 and 36 are located, to which the ducts 38 and 40 αf the respective high vacuum pumps 42 and 44 are connected, see also Figure 5. By means of these pumps mainly transport medium is suctioned away from the processing side of the module. The non-processing side 46 αf the module is via duct 48, wall passage 50 and duct 52 connected with the high vacuum pump 54 for a discharge of also transport medium as the main agent. In the Figures 2, 3 and 4 the transporter sections 14 are shown mo¬ re detailed. In the transporter house 56 the segment 156, made of porous material, functions to supply gaseous medium 98 from the bearer 58, through injection channel 60, supply channel 62 an common channel 64 towards passage 18. The transporter house 56 is surrounded by cover 66 with the sidewalls 68 and 70 thereof, creating the respective discharge channels 72 and 74. By means αf the high vacuum pumps 42 and 44 the medium, urged into passage 18, is suctioned off through these discharge channels along the sub¬ strate 20 and through both module compartments 76 and 78 aside the processing compartment 28. The enlarged ends 80 and 82 of the transporter house 56 enable a tho— rough mounting of this house and an optimal transfer of heat from this house towards bearers 58 and 84. Compressed transport medium as cooling agent is fed through these bearers as cooling elements. In Figure 6 the transporter arrangement 12' is shown, with in the transporter house 56' the location of a cooling channel 86 far the passing therethrough of the cool transport medium 98 under high pressure. Thereby the common channel 64 is via the injection tube 88, having an extremely narrow passage 90, connected with this channel. The cover 66 is secured to house 56. Thereby the passage-wall sec¬ tions 92 and 94 are by means of sidewalls 68 and 70 connected with the mounting section 96 of this cover. The wall sections are inclined to faci¬ litate a discharge αf medium from the passage 18 towards channels 72 and 74. Thereby the channel 72 is kept wide with a passage width of for instan¬ ce 3 mm. Consequently, this channel 72 has a very low flow -restriction and such also, because of the very restricted length αf for instance only 50 mm αf such channel. Between the passage-wall section 92 and the substrate 20, passing through, a narrow gap 100, ith the height of for instance 40 micrometer, can be maintained, in which gap, in combination with a relatively great passage length for the gaseous medium, a considerable flow restriction for the transport medium 98 is established. Thereby this flow restriction can be 10 000 times larger than that of channel 72. Consequently, a leaking away of transport medium through this gap 100 is almost totally prevented. -4 In that way in this channel a vacuum αf for instance 10 bar can be maintained, without an affecting αf the processing in processing cham— —8 ber 102, in which the high vacuum can amount 10 bar and with special , π -10. processings even 10 bar. Through the channels, located in the porous segment 156, with in addition channels 104, a supply of this medium takes mainly place from the common channel 64 towards the narrow gap 106 and from there towards discharge channel 72. Via channel 74' a more restricted discharge of this medium 98 takes place, becau.se gap 108 is smaller than gap 106. A.s a result, due to such difference in urging αf medium, a resulting thrust is applied by this medium απ the substrate 20 in the direction of substrate movement. Through the large surfaces of the passage-wall sections of both cover 66 and transporter section 14 an effective heat transfer takes place from the process surface 110 of the substrate, as this surface in the fore¬ going process chamber 102 is heated by means of the processing, occurring thereon. The lower section 112 of the transporter section 14 is also heated by this process medium, with consequently a heat transfer from two sides to¬ wards the cooling medium 98. Due to the extremely small distance for the conduction of heat, for instance approximately 6 mm, in combination with the conduction of the heat over the entire processing width in lateral direction of this section, the heat transfer is optimal,with consequently an extremely small difference in temperature between the passage-wall sections 92 and 94 and this lower section 112. As a result, in both transporter section 14 and in cover 66 almost no deformation due to changes in temperature takes place, which is of greate importance for the extremely narrow passage for the substrates, with the micro gaps aside these substrates and the transporter sections. Against the lower side αf the cover 66 one or more removable shields O H 114 are mounted for the collection therewith of process medium, such as metal particulates. Such a shield can have any shape anacan, if required, even surrounds the whale caver 66 towards near the passage 18. Furthermore, this shield 114, as located aside the process chamber, can partially or totally shield off the module compartments 76 and 78 aside such chamber and can establish a partial or complete sealing off of these compartments from the module—compartment 22, as is shown in Figure 5. The transporter section 16 on top of the passage has almost the same structure, however with the supply channel system 60, 62 and 64 for the segments 156, located therein. Above these transporter sections 16 an electrode plate 116 is moun¬ ted to attrack thereon that part αf the process medium, that has passed through the processing chambers 102, without hitting a substrate, see also Figure 1. With high temperatures for the processing it is required, that during such processing the transporter sections 14 and 16 have almost the same temperature. Such because of the avoiding of deformations in these sections. To that purpose, in this module one or more ovens 70 are located in the non-processing side 46, which heat these transporter sections 16 in such a way,- that the temperature is approximately the same as that of the lower transporter section 14, Furthermore, also the upper surface of the substra¬ tes is heated. Thereby for both transporter sections 14 and 16 almost the same me¬ thod of cooling, with whether or not a cooling channel 86 located in these sections. In Figure 7 such a transporter is shown on an enlarged scale at the location of the passage. Thereby the differences in sizes between the va¬ rious passage gaps and discharge channels become evident. The substrates 20-displace relatively slow, far instance 10 mm/sec. Furthermore, the substrate sidewall has a more or less stepped surface, which is due to foregoing processings in other processing equipment. Conse¬ quently, this sidewall acts as a considerable obstruction for the medium, escaping through the passage section 106. Even with an escape speed of 50 mm/sec. at 10~ " bar, the quantity of escaped medium is still extremely small, for instance 200 mm /sec. per transporter section, resulting in the negligible amount of 0.2 liter/sec. —8 at 10 bar. Such compared to the available discharge capacity of the va¬ cuum pumps of 5000 liter/sec. or more. In the Figure 8 the mounting αf such a transporter arrangement 12' on the bearer 58 is shown. Thereby by means αf flows αf medium from the inclined channels 118, see also Figure 14, the substrate 20 is kept in a mid position αf passage 18. Such because a removal of such substrate from the center results in¬ stantly in equalizing thrusts of these flows of medium on the substrate. In the sidewall 30' of the module the passage 180 is located, throug which part of the transport medium at the non-processing side is withdrawn by a high vacuum pump. In Figure 9 another form of the porous segment 156 1 is shown, where¬ by this segment for the greater part 120 thereof establishes a passage-wall section. The substrate, moving along, immediately rests upon the gaseous cushion, which is maintained continuously by the flow of medium through the porous material. Thereby the upper section thereof is partly covered by the layer 122, which is also shown in Figure 12. In consequence of this, it is passible to have a maximum throughput of medium in the central section 124, whereas this throughput gradually diminishes towards the side sections 126 and 128. By means of such a restriction in throughput the consumption αf me— dium can be reduced. Protrusion 130 of house 56 in combination with groove 132, which is located in the sidewall of the segment, provides an enclosure- of this seg¬ ment in the direction towards the passage. In Figure 10 the porous segment is shown in still another form 156" and whereby the channel 64" with sections 134 aside the segment extends to near the lower end 120" of this segment. As a result, via the short section 136 αf the porous material trans¬ port medium is fed through more easily, with eventually even flows of medium through passages 138, located aside this section 136. These channels can have an inclined position, the same as channels 118, as shown in Figure 14. For the porous segment any type of material may be suitable, such as teflon for the process temperatures at a low level and stainless steel for processing under high temperature, such as 500 C. In Figure 11 the segment 156' •' consists of solid metal, whereby in the sidewall thereof the channels 118 , are etched, with the outlet of the¬ se channels in the supply channel 64 , ■ • . In Figure 13 the porous segments 140 and 142 extend to near the bearers. Thereby the sidewall-sectioπs 144 fill the passage area 146 on both sides αf the centrally positioned passage section 18. Fledium 98, supplied through these segments 140 and 142, flows in an increased amount via the wall section 148 into the passage section 13 and so establishes such a gaseous cushion for the substrates, that a mechanic contact αf these substrates with wall section 148 is prevented. In Figure 15 in between the successive transporter arrangements 12 the buffer stop 150 is positioned, see also Figure 17. In the shown rest position the substrate 152 is urged against the gaseous cushion αf the buffer walls 154 and 156. Thereby on command such a cushion is established and is maintained by means of a supply of this me¬ dium through the pαrous material of this stop. The gaseous flow through this buffer is that large and concentrated, that no mechanic contact of the substrate with the buffer is possible. In stead of porous material also a stop is possible, in which a seg— ment with channels, located in its sidewalls, is located. Thereby the substrate 158, located in front, gets the opportunity to displace from this substrate 152. After the attaining of a certain distance in between both substrates, the stop is displaced upwardly over same distan¬ ce, through which substrate 152 can follow the foregoing substrate. In another configuration such displacement occurs in a sideward direction. Such a displaced stop is shown in Figure 16, whereby after some time this substrate is displaced that far away from this stop, that the stop can be brought again to its rest position for the stopping of the following substrate. Because the substrates can move independently by means of the trans¬ port medium, supplied through the transporters and such with a somewhat higher speed, in that way the passing through of the process compartment αf the module by these substrates, which are separated from each other, is ob— tained. As seen in the direction of substrate movement, such a stop arrange¬ ment is located on some distance behind such module section, in which the processing takes place. It is important, that the discharge of the transport medium αf the transporter sections at the processing side does not function as a discharge for the transport medium of the transporter sections a t the non—processing side. Such because the consumption αf gaseous transport medium of this second section can be considerably larger and can affect the discharge capacity of the discharge ducts of the first section to such extent, that with critical processings under high vacuum this vacuum cannot be reached. To that purpose, as is shown in Figure 1 , by means αf walls 162 and 164, whether or not in combination with sidewall sections 144 of the seg— meπts 140, see also Figure 13, an allowable separation of the processing side from the non-processing side is obtained. The in Figure 8 shown discharge an both sides of the passage also accomplishes such a sufficient separation. Within the scope of the invention any type of processing is possible, with also variations in cooling, discharge and cleaning of the process— and transport medium. Furthermore, the removal of particulates can take place by means αf water baffles or similar structures, which are placed in the discharge ducts towards the whether or not high vacuum pumps. Furthermore, in the module also processing can take place of tape as an uninterrupted series of substrates. Also, more than one type of processing in successive sections αf such a module are possible. It is also possible, that in the module or in the supply- or dis¬ charge route thereof a substrate can be moved in sideward direction from the main passage, whereby for that purpose flows of gaseous transport medium can serve and such whether or not in combination with a guide wall, which on command can be brought from its rest position with open passage to a guide position in this passage. To that purpose, via this guide wall a great number of gaseous flows from supply blocks can at least temporary urge on the substrate. Thereby such a supply block can be positioned in between successive transporter sections. Within the scope of the invention, by means αf the flows of trans¬ port medium, the substrate can be displaced independently in the successive transporters, with systems in the module and possibly in both the supply- and discharge route thereof to regulate the speed of such substrate per group of transporters. To that purpose, in at least some transporter sections in an adapted structure thereof the transport medium, flowing towards the passage, can exercise a resulting thrust on the substrate, passing through their passage section, which is opposite to the direction of substrate movement. Thereby such a thrust is variable by regulating the supply of the transport medium. In that case in the module sensors are located, which control the speed αf such a substrate, with the providing of correction — i i_ - signals to valves, located in the supply route of the transport medium. To be able to follow the substrates effectively, these substrates can at least locally be provided with an orientation means, such as a layer αf metal to precisely determine,in co-operation with the sensors, the sue— 5 cessive positions thereof per unit of time. Furthermore, if required, an adaption αf the passing through speed of the substrate can take place. Such an orientation means can be applied on the non-flat, thin side- walls of the substrate and so do not disturb the processing. The sensors for the speed control and other sensors can be located 10 in the rion-processing side αf the module and/or in the supply— and discharge route thereof, with an operation area in between successive transporters. Furthermore, to prevent the contamination of such sensors, they can have a position in the compartments aside the processing compartment, as seen in lateral direction. 15 Furthermore, in this module the testing and measuring of the substra¬ tes, even during a temporary stand-still thereof, can take place. To that purpose, the type of buffer stops, as shown in Figure 15, can be used in an adapted version thereof. Such a testing and measuring can take place within for instance 0.3 20 second, without the touching of successive substrates. In that case the test— and measuring sections, which can be positio¬ ned in front of the processing compartment or thereafter, are at least the length of a substrate removed from this processing compartment. Such to prevent an affecting of the processing. 25. Within the scope of the invention also other and eventually additio¬ nal systems for control, testing, measuring and sorting are possible. Furthermore, in the module at least locally a "floating" transport can be accomplished by means αf a transporter arrangement on only one side of the passage.

Claims: C L A I M S 1. Module for processing of supplied substrates and tape, comprising at least a series of transporters for a floating transport of said sub¬ strates in a passage thereof, said transporters successively positioned in direction of substrate movement, in between said transporters slots of the processing chamber, and means for removal in sideward direction of at least part of gaseous transport medium, escaping from said transporters towards said processing slots. 2. Module according to Claim 1 , wherein in said transporters a transporter section is located at the processing side of said passage, a transporter section is located at the non-processing side of said passage, each section containing at least a supply block for supply of said gase¬ ous medium towards a section of said passage, located in between said sec¬ tions and 3aid blocks are arranged in such a way, that at least during the processing by means of said gaseous transport medium in between said transporter sections on both sides of said substrate, moving along, a floating gas cushion for said substrate is established. 3. Module according to Claim 2, wherein at least one discharge duct for said gaseous transport medium is connected with said module section st said processing side. 4. Module according to Claim 3, wherein at said processing side of said passage in lateral direction on both sides of said processing chamber a communication chamber is located for the discharge of said gaseous me¬ dium. 5. Module according to Claim 4, wherein such means are located, that during the processing the discharge of said gaseous transport medium, sup¬ plied at said processing side through transporter sections, positioned therein, also at least for the greater part thereof takes place at said processing side in lateral direction. 6. Method αf the module according to Claim 5, wherein the discharge of said gaseous medium, supplied through said transporter sections at said processing side, for the greater part thereof takes place in sideward di¬ rection through at least one duct, which is connected to said module sec¬ tion at said processing side. 7. Module, with the incorporation of said method according to Claim 6, whereby to said communication chamber for the discharge of said gaseous medium, escaping from said processing slots, also said discharge from said transporter sections is connected. 8. Module according to Claim 7, wherein said communication chambers are connected with ports, positioned in the sidewalls of said module sec¬ tion at said processing side of said passage and said ports through ducts are connected with at least one high vacuum pump. 9. Module according to one of foregoing Claims, wherein at said non- processing side a communication chamber and ducts are located, through which at least the discharge of transport medium from said transporter sections at said non-processing side takes place towards a high vacuum pump, 10. Module according to Claim 6, wherein on both sides of the central passage section a wall is positioned for an adequate separation of at least said processing side from said non-processing side * 11. Module according to one of foregoing Claims, wherein said supply blocks of at least said transporter sections at said processing side * are * provided with walls on both sides thereof and extending towards said pas¬ sage, in between said block and said walls discharge channels ars located for an at least partly discharge of said gaseous transport medium, said walls extending laterally into said communication chambers aside said processing slots and said discharge channels aside said supply block are in open connection with said communication chambers. 12. Module according to Claim 11, wherein said walls aside said supply block are part of a housing, in which said supply block and said discharge channels αf said block are successively arranged. 13. Module according to Claim 12, wherein said transporter sections in lateral direction are connected with bearers aside thereof, in said bea¬ rers supply channels for said gaseous transport medium are located and said supply channel in said supply block of said transporter sections in— nerconnect βaid channels in both bearers. 14* Method of said module according to Claim 13, whereby during at least the processing transport medium, flowing through said supply channel of said transporter section, cools off said transporter section. 15. Module according to Claim 13, wherein in said transporter sec¬ tions a segment is secured, with a passaςewall section being part of said passage wall, in said segment channels are located, debouching into said passage, the entrance of said channels are connected with a common channel and said common channel through a narrow communication channel is connec¬ ted with said supply channel, located in said transporter section. 16. Module according to Claim 15, wherein said segment at least contains porous material. 17. Module according to Claim 15, wherein said common channel over some distance extends aside said segment in direction towards said passa— gewall section. 18* Module according to one of foregoing Claims, wherein, as seen in direction of movement of said substrates, at least the passagewall section of said block in front of said segment over some distance is removed from the imaginary extension of said passagewall section at the back of said segment. 19. Module according to one of foregoing Claims, wherein the struc¬ ture of said transporters is such, that in both sections thereof the flow restriction for the gaseous transport medium is larger than the flow res¬ triction αf the gap between said passagewall sections of said transporter block and said substrate, having a maximum height. 20, Method of said module according to Claim 19, wherein the supply pressure in said common channel of said supply block, located in said transporter section at the non-processing side, is larger than the supply pressure in said supply block, located in said transporter section at the processing side. 21. Module according to one of foregoing Claims, wherein, as seen in direction of movement of said substrates, the length of said transporter section at the non-processing side is larger than the length of said trans¬ porter section at said processing side. 22. Module according to one of foregoing Claims, wherein said prαcss- sing side of said module is located underneath said passage for said sub¬ strates. 23. Module according to one of foregoing Claims, wherein the struc¬ ture is such, that as during the processing heat is supplied towards said substrate, the following transporter cools off said substrate to such ex- tent, that the temperature of said substrate remains within an acceptable value. 24. Method of said module according to Claim 23, whereby said gaseous transport medium, under high pressure flowing through said supply channel of said transporters, act as a cooling medium for said transporters. 25. Module according to one of foregoing Claims, wherein, as during the processing at said processing side heat is supplied to said substrate, at the non-processing side at least one heat source for supply of heat is located. OMPI 26. Module according to one of foregoing Claims, wherein at said processing side near said transporter sections a removable shield is secu¬ red for guiding said process media towards said processing slots in be¬ tween said transporters and tα deposit process media thereon, preventing for the greater part process media to deposit on said transporter sections. 27. Module according to one αf foregoing Claims, wherein means, such as electrodes, are located for a correct functioning of at least one of the following processings: ion beam deposition, plasma deposition, plasma etching, sputter etching, sputter deposition, ion milling, CVD systems, chrome etching, electron beam annealing, ion implantation, electron beam deposition, high vacuum evaporation, reactive ion etching, etc. 28. Module according to one αf foregoing Claims, wherein at least one electrode plate is located far collection of process media, which has pas— sed through said processing slots in between successive transporters. 29. Module according to one of foregoing Claims, wherein in the side- wall of said segment, being whether or not porous, and whether or not pla¬ ced in an inclined position, channels for said transport medium are et¬ ched, which are positioned in an inclined position in direction towards the centre of said passage for said substrates. 30* Module according to one of foregoing Claims, wherein in at least one section thereof in the supply or discharge of said module means ara located to ' temporarily establish a stop for said substrates. 31 • Module according tα Claim 30, wherein in said section in between successive transporters a bufferblock arrangement is located to temporari¬ ly block at least part of said passage and in said block arrangement chan¬ nels for gaseous medium are positioned to establish a cushioned stop. 32. Method of said module according to one of foregoing Claims, where¬ by after a substrate is passed through, said buffer block blocks said pas- sage for the next substrate, simultaneously a flow of gaseous medium through said block is urged in direction αf said next substrate to buffer off said substrate untill a stop in rest position and whereby in between said block and said substrate a mini gas cushion is maintained and after the establishing of a sufficient distance towards the foregoing substrate, said next substrate after displacement of said buffer block can be displa¬ ced individually. 33. Module according to one of foregoing Claims, wherein means are located to, upon command, displace a substrate in sideward direction out of said passage. 34. Method of said module according to Claim 33, wherein at least temporary flows αf transport medium provide a thrust on said substrate to establish a sideward displacement of said substrate. 35. Module according to Claim 33, wherein at least one transporter at one side thereof is provided with an opening aside said passage. 36. Module according to one of foregoing Claims, wherein the struc¬ ture is such, that the thrust on the substrate by means of flows αf ga¬ seous transport medium is controllable and such preferably in groups of transporters. 37. Method of said module according to Claim 36, whereby during the processing by means of sensors, which at least locally sense the speed of said substrates, control impulses are provided to valves, which are loca¬ ted in the supply of at least one of said transporters. 38. Substrate, adapted for processing in said modules, incorporating said method according to Claim 37, which is provided with an orientation means at preferably its non-processing side, to control said substrate movement together with said sensors. 39. Module, wherein said method according to Claim 37 is incαrpora— ted, whereby said sensors are located at the non-processing side. 40. Module according to one of foregoing Claims, wherein a section is located for testing, inspection, measurement or other handling αf said substrates. 41. Module according to one of foregoing Claims, wherein more than one arrangement for processing is located.

Inventors: BOK EDWARD, BOK, EDWARD
Applicants: BOK EDWARD, BOK, EDWARD
Application year: 1984
Main classification: H05K13
IPC codes: B65G51, H01L21, H05K13