ELECTRONIC DEVICE

Abstract: A material built up from a plurality of elements, having a crystal structure in which the occupation of the positions in the crystal lattice by the different elements, and the choice of these elements for these positions are such that, in one direc­ tion of magnetic polarization, the material exhibits all proper­ ties of a metal as regards the transport of electrons with a given direction of spin, while for electrons of opposite magne­ tic spin the material exhibits all properties of a semi-­ conductive material or an insulator.

Description: Title: Semi-metallic ferromagnetic or ferrimagnetic material, and device employing such material. This invention relates to a new type of material, which material can be designated as a semi-metallic ferromagnet, and also relates to a device in which such a material is employed. As is well-known, electrons not only have an electric charge, but also a magnetic moment, the so-called spin. The electric charge and the spin affect the physical character is- tics of a material so drastically that they serve as a basis for the classification of materials. Thus, according to the electrical conductivity, we distinguish the metals (conductors), the semi-conductors and the insulators. By means of the magnetic moment, a classification is made by magnetic behaviour. Thus there are distinguished the ferromagnetic, anti-ferromagnetic, ferrimagnetic and non-magnetic materials. The electrical and magnetic classes can be combined with each other. Thus it is possible to speak of ferromagnetic metals (an example being iron), non-magnetic insulators (one example being glass) t anti-ferromagnetic semi-conductors (for example MnTe), etc. Of these classes of compounds and compositions, only a minority occur naturally. Most compositions have been realized by man. One example are the perovskites. It is an object of the present invention to provide a new material which has not so far been prepared, and also does not occur naturally. The invention is concerned with a material which, according to the above classification, can be characterized as a semi-metallic ferromagnetic or ferrimagnetic material. It has been found that such a material, which according to the invention is characterized by a crystal structure in which the occupation of the positions in the crystal lattice by the different elements, and the choice of these elements for these-pos-itions are such that, in one direction of magnetic polarization, the material exhibits all properties of a meial''as regards the transport of electrons s with a given-Pdirect'ion of spin, while for electrons of opposite magnetic spLm-the material exhibits all properties of a semi-conductive material or an insulator, opens up a route to a wholly new class of electronic devices. As a layer of the material according to the invention only conducts charge carriers (for example electrons) with one specific direction of spin, such a layer can be used as a filter to produce polarized particles (such as electrons). Thus for example, the material can be made into polarizers and analyzers for such particles in analogy to a nicol or polaroid filter for light. Suitably, in the material according to the invention, at least one of the elements constituting the material is a magnetic atom, with the crystal structure being such that, at that position, it does not exhibit inversion symmetry. In this embodiment, the magnetic atom is preferably manganese. Preferably, in the material according to the invention, the crystal structure is a so-called Cl - Heusler b 2 structure that can be described as space group F 4 3 m (Td) (number 216 in the International Tables for X-ray Diffraction), and in which the a-positions (0,0,0) are occupied by an element from the third part of Group VIII of the Periodic Table (Ni, Pd, Pt), the b-positions (+ ) are unoccupied, the c-positions (* ) are occupied by a magnetic element, and the d-positions (i ) are occupied by an element of Group Va of the Periodic Table. A highly suitable material of this preferred type is one in which the a-positions are occupied by nickel atoms, the c-positions by manganese atoms, and the d-positions by antimony atoms. By means of the material according to the invention, electronic devices of various functions can be made. A general characteristic of such devices is that they comprise a plurality of layers of crystalline material, and include means for injecting charge carriers into at least one of the layers and for removing charge carriers from at least one other layer, characterized in that at least one of the layers is a material according to the invention, and that one layer is arranged as an area. for affecting the direction of spin of charge carriers moving in the device. Preferably, said at least one layer of the material according to the invention consists in essence of a single magnetic domain. In an ideal layer of semi-metallic ferromagnetic or ferrimagnetic material according to the invention, electrical conduction takes place exclusively by charge carriers with one specific spin orientation relative to the direction of magnetization of the material. Accordingly, affecting the spin orientation of the charge carriers from the outside has a direct effect on the electrical conduction Using this aspect, devices can be made which amplify and/or switch current. Viewed in this way, such devices can be regarded as analogues of a transistor. In the spin affecting zone of the device according to the invention, there is an interaction between the electron spin of the charge carriers and an external influence. Such an external influence may be an electrical, a magnetic, or an electro-magnetic vibration (light or micro-wave). The external influence may even be a mechanical vibration, such as sound, while influencing by temperature is among the possibilities. A substantial advantage of the material according to the invention and the devices based on it is that the speed of operation is equal to the speed with which basic physical phenomena take place. Influencing the spin orientation of a charge carrier, for example, reversing the spin orientation of an electron, takes place at a speed of 10 11 second This, then, is also the order of velocity at which a device accor ding to the invention can operate, which is a factor of 100 faster than devices hitherto known. The invention is illustrated with reference to the accompanying drawing, in which the single figure is a diagrammatic illustration, by way of example, of one embodiment of a device employing the material according to the invention. The device, shown diagrammatically, consists in essence of three layers. Layer 1 consists of the material according to the invention, for example,Ni Mn Sb, magnetized in one direction. Layer 2 consists of a suitable material in which the spin orientation of charge carriers moving therein can be influenced. Examples of such materials are the rare earth metals and the so-called transition metals. Layer 3 consists again of the material according to the invention. Layers 1 and 3 may be very thin, so long as a homogeneous magnetizable layer is available. A thickness in the order of 100 atoms is already sufficient. Connected to layer 1 is a conductor 4 supplying charge carriers to the device, and connected to layer 3 is a conductor 5 for the removal of charge carriers. Assuming that layers 1 and 3 are both in such a state as to pass charge carriers with an upward spin ("spinup") only, the device operates as a conductor for such charge carriers. Charge carriers with a downward spin ("spin-down") are not passed, because layers 1 and 3 operate as insulators for such charge carriers. Owing to the state of layer 1, only charge carriers with "spin-up" reach layer 2. If now, in layer 2, the spin orientation of the charge carriers is changed, for example owing to an external influence, and the spin is reversed, no more chargeaarriersenter conductor 5 via layer 3, because layer 3 only passes nspin-up" charge carriers. Accordingly, the device can serve both as a source of polarized charge carriers and for detecting an external influence. The passage of charge carriers by the device can be indicated, for example, by an ammeter 6 connected to conductor 5.

Claims: C L A.I M S 1. A material built up from a plurality of elements, characterized by a crystal structure in which the occupation of the positions in the crystal lattice by the different elements, and the choice of these elements for these positions are such that, in one direction of magnetic polarization, the material exhibits all properties of a metal as regards the transport of electrons with a given direction of spin, while for electrons of opposite magnetic spin the material exhibits all properties of a semi-conductive material or an insulator. 2. A material according to claim 1, characterized in that at least one of the elements constituting the material is a magnetic atom, with the crystal structure being such that, at that position, it does not exhibit inversion symmetry. 3. A material according to claim 2, characterized in that said magnetic atom is manganese.. 4. A material according to claims 1-3, characterized in that the crystal structure is a so-called Cl b - Heusler struc 2 ture that can be described as space group F 4 3 m (Td) (num- ber 216 in the International Tables for X-ray Diffraction), and in which the a-positions (0,0,0) are occupied by an element from the third part of group VIII of the Periodic Table (Ni, Pd, Pt), the b-positions (µ ) are unoccupied, the c-positions (* ) are occupied by a magnetic element, and the d-positions (i ) are occupied by an element of Group Va of the Periodic Table. 5. A material according to claim 4, characterized in that the a-positions are occupied by nickel atoms, the c-positions by manganese atoms, and the d-positions by antimony atoms. 6. An electronic device comprising a plurality of layers of crystalline material, and including means for injecting charge carriers into at least one of the layers and for removing charge carriers from at least one other layerr characterized in that at least one of the layers is a material as claimed in claims 1-5, and that one layer is arranged as an area for affecting the direction of spin of charge carriers moving in the device. 7. A device according to claim 6, characterized in that said at least one layer of a material as claimed in claims 1-5 essentially consists of a single magnetic domain.

Inventors: DE GROOT, ROBERT AART, JANNER, ALOISIO GIUSEPPE, MUELLER, FRED MICHAEL
Applicants: STICHTING KATHOLIEKE UNIVERSITEIT, STICHTING VOOR FUNDAMENTEEL ONDERZOEK DER MATERIE
Application year: 1984
Main classification: H01L43
IPC codes: H01F1, H01L43, H01L49, C22C19, C22C22