MESFETS AND METHODS OF MANUFACTURING MESFETS

Abstract: A compound semiconductor MESFET is provided with a passivation layer (54) which is crystallographically similar to a compound semiconductor active layer (53) thereunder and has at least one constituent that is a constituent also of the compound semiconductor of the active layer. The passivation layer is an insulating or semi-insulating layer, and has a forbidden band gap wider than that of the compound semiconductor of the active layer. Such a MESFET can have excellent RF and other charac­ teristics.

Description: MESFETS AND METHODS OF MANUFACTURING MESFETS. The present invention relates to MESFETS and methods of manufacturing MESFETS. A compound semiconductor such as gallium arsenide (GaAs) or indium gallium arsenide phosphide (InGaAsP) is used in fabricating a semiconductor device such as a MESFET for a micro-wave frequency or a light emitting device to obtain the best use of the characteristics of the compound semiconductor. Such semiconductor devices must include a passivation layer. For example, a layer of silicon dioxide (SiO2) or silicon nitride (SiN4) is used for passivating the surface of a layer of a compound semiconductor. Such an SiO2 or Si3N4 layer is excellent as a passivation layer for a semiconductor device using silicon, but is not always preferred for a semiconductor device using a compound semiconductor. This is because such an SiO2 or Si3N4 passivation layer has a different lattice constant to that of a layer of a compound semiconductor such as GaAs, making the interface between the two layers chemically unstable and increasing the surface state density. The electrical characteristics of a semiconductor device using the compound semiconductor are, therefore, not stable, and - are sensitive to contamination in the surrounding atmosphere. Investigations into a preferable passivation layer to replace the SiO2 or Si3N4 layer for use in a compound semiconductor device have been made heretofore. For example, for GaAs, plasma oxidation or anode oxidation of the surface of a GaAs layer has been tried, so as to obtain an oxidized GaAs surface layer; from the viewpoint that a layer of an oxidized material of a compound semiconductor is desired as a passivation layer for the compound semiconductor layer, as an SiO2 layer is preferred for an Si layer. However, desirable results have not been obtained as yet, since all of these techniques have process difficulties and the resultant oxidized layers are chemically unstable. At present, an SiO2 or Si3N4 layer made by chemical vapor deposition (CVD) or plasma CVD must be used for a passivation layer in a compound semiconductor device. However, production of such a passivation layer necessitates very careful handling and a strictly controlled environment during production in order to reduce contamination of the surface of the GaAs and, therefore, control of such procedures for fabrication are complex. MISFETs using an aluminum gallium arsenide (AlGaAs) layer as an insulating layer between a GaAs active layer and a metal gate were proposed, (see J.P. Andre et al "(Ga, Al)As-GaAS MIS Heterostructure with Semi-Insulating (Ga, Almas Grown by MOVPE", GaAs And Related Compound, 1982; H.C. Casey et al "Investigation of Heterojunction for MIS Devices with Oxygen-Doped Awl a ks on n-Type GaAs", J. Appl. Phys. 50(5), May 1979, pp 3484-3491). However, they do not relate to a MESFET and, therefore, do not include evaluation of an AlGaRs layer as a passivation layer for an GaAs active layer in a MESFET. It is desirable to provide a passivation layer on an a compound semiconductor active layer in a MESFET which does not adversely affect the operation of the active layer in the interfacial region of the two layers. It is also desirable to provide a MESFET using a compound semiconductor, in which the MESFET has an improved radio frequency (RF) performance. In an embodiment of the present invention, there is provided an insulating or semi-insulating layer for passivating the top surface of an active layer of a first compound semiconductor in a MESFET, this insulating or semi-insulating layer being a second compound semiconductor composed of components including at least one of the components of the first compound semiconductor and having a forbidden band gap wider than that of the first compound semiconductor. The second compound semiconductor may have a lattice constant similar to that of the first compound semiconductor. The inventors of the present invention found that a layer of the second compound semiconductor as stated above may make an excellent interface with a layer of the first compound semiconductor, in which the layer of the first compound semiconductor is not adversely affected in the interfacial region by the second compound semicompound. The second compound semiconductor should be insulating or semi-insulating and have a forbidden band gap wider than that of the first compound semiconductor, in order to function as a passivation layer for the first compound semiconductor. The second compound semiconductor can be insulating or semi-insulating and have a forbidden band gap wider than that of the first compound semiconductor. The preferred combinations of the first compound semiconductor to be used for an active layer and the second compound semiconductor to be used for a passivation layer include, for example, a passivation layer of Al Ga As wherein x is between 0.2 and 0.5, preferably 0.3, for an active layer of GaAs; a passivation layer of InP for an active layer of InyGal yAs- wherein y is 0.53; a passivation layer of Alz In As wherein z is 0.48 for an active layer of In P; and a passivation layer of Al In 1-yAs wherein y is 0.48 for an active layer of In Ga As wherein y is 0.53. y l-y The forbidden band gap of AlxGa1-xAs is between 1.7 x and 1.95 when x is between 0.2 to 0.5. The lattice constant and forbidden band gaps of the compound semiconductor mentioned above are shown in the following Table. Table Active layer Passivation layer GaAs Alo.3Ga0.#s lattice Constant 0.565 nm 0.565 nm Forbidden Band Gap* 1.4 eV 1.8 eV Resistivity - 108 Qcm In0.53Ga0.47As InP lattice Constant 0.586 nm 0.586 nm Forbidden Band Gap* 0.8 eV 1.35 eV Resistivity - 105 Stn Inp Al0.48InO.52As lattice Constant 0.586 nm 0.586 nm Forbidden Band Gap* 1.35 eV 1.8 eV Resistivity - 108 Sun In0.53Ga0.47As Al0.48In0.52As lattice Constant 0.586 nm 0.586 nm Forbidden Band Gap* 0.8eV 1.8 eV Resistivity - 10 San * The lattice constant can be controlled in the order of 10-5 nm. Embodiments of a process for fabricating a MESFET according to the present for fabricating a MESFET invention will be described later. A process for fabricating a MESFET according to the present invention may has an advantage, for example, in that a passivation layer of AlGaAs having a higher resistivity of 108 Qcm may extend under extending lines from the source, drain, and gate electrodes and bonding pads connected thereto, allowing the improvement of the isolation of each electrode including the bonding pad connected thereto from other electrodes, including the bonding pads connected thereto (GaAs of a semi-insulating substrate has a resistivity of only 106 scum). A passivation layer of a compound semiconductor may be formed by any one of the canventional methods, for example, molecular beam epitaxy (MBE) or metal organic CVD (MXND). Reference will now be made, by way of example, to the accompanying drawings, in which: Figure la is a sectional view of an MOS diode, and Fig. lb is a graph showing the MOS capacitance characteristic as a function of gate voltage for theoretical and experimental MOS diodes; Fig. 2 shows the result of Auger analysis of the interfacial region between the SiO2 and GaAs layers in Fig. la; Figs. 3a, 3b, and 3c are sectional views of MESFETs having various recess lengths; Fig. 4 shows RF characteristics of MESFETs shown in Figs. 3a, 3b, and 3c; Fig. 5 is a block diagram of a circuit for measuring frequency dispersion; Figs. 6a and 6b are graphs of normalized transconductance vs frequency; Fig. 7 illustrates frequency dispersion of the transconductance at a various gate bias (G-V characteristic); ; Fig. 8 illustrates frequency dispersion of the transconductance of MESFETs using an SiO2 and Si 3N4 passivation layer; Fig. 9 is a graph of frequency dispersion of the transconductance of MESFETs having various recess lengths; Figs. 10a and 10b are graphs of the drain current vs drain voltage (I-V) characteristic; Fig. 11 is a sectional view of an apparatus for MOCVD; Fig. 12 is a graph of the ratio of mixed crystal vs mole ratio of feed gases; Fig. 13 is a graph of growth rate vs temperature of substrate; Fig. 14 is a graph of layer thickness ratio vs position in a wafer; Fig. 15 is a sectional view of a MIS diode having an insulating AlxGal¯xAs layer; Fig. 16 is a block diagram of an apparatus for measuring the capacifance vs voltage (C-V) characteristic; ; Fig. 17 is a graph of the C-V characteristic of an MIS diode embodying to the present invention; Fig. 18 is a graph of the G-V characteristic of an active layer of the MIS diode; Fig. 19 is a graph of the carrier concentration in an active layer of the MIS diode; Fig. 20 is a graph of the interface potential vs applied voltage; Fig. 21 is a graph of the I-V characteristic; Fig. 22 shows MIS capacitances in MIS diodes having various x values; Fig. 23 shows a profile of Al mole fraction around the interface of AlGaAs and GaAs layers. Figs. 24 to 27 are sectional views of a GaAs MESFET during the steps of a process for fabrication thereof; Fig. 28 shows transconductance of a GaAs MESFET embodying the present invention; Fig. 29 shows the RF characteristics of a GaAs MESFET embodying the present invention; Fig. 30 is a sectional view of a GaAs MESFET of another embodiment of the present invention; and Fig. 31 is a sectional view of a further embodiment of a GaAs MESFET according to the present invention. First, descriptions of the prior art, referring to the drawings, are made to facilitate understanding of the present invention. Figure la shows an MOS diode in which 1 denotes a semi-insulating GaAs substrate including a GaAs buffer layer not shown in the figure, 2 an n-type epitaxial GaAs layer, 3 an SiO2 layer, 4 a circular gold (Au) electrode, and 5 an ohmic contact electrode. The n-type epitaxial GaAs layer 2 contains an n-type impurity 16 or 9.29 x1016 -3 concentration of 9.29 x 1016 cm , as used in a standard GaAs FET. The SiO2 layer 3 is 500 nm thick and produced by chemical vapor deposition (CVD). Figure Ib shows curves of MOS capacitance in relation to gate voltage, in which the solid line and the broken line correspond to the theoretical and experimental curves respectively. In the figure, when the applied voltage decreases from +20 volts to -20 volts, the MOS capacitance of theoretical curve decreases from 0.2 pF to 0.185 pF (approximately 7.5% decrease), while the MOS capacitance of the experimental curve is not changed at all. This means that a large amount of surface states are present at the interface of the SiO2 layer 3 and the n-type GaAs layer 2 and the voltage externally applied to the MOS diode applies only to the SiO2 layer 3, not to the region inside the n-type GaAs layer 2. Auger analysis was effected on the MOS diode. Figure 2 illustrates the ratio of the number of the atoms of the component elements of the SiO2 layer 3 and the GaAs layer 2 in the direction perpendicular to the interface of the two layers 2 and 3, in which S, O, G, and A denote silicon, oxide, gallium, and arsenic respectively. The figure clearly shows the interdiffusion of the component elements of the SiO2 and GaAs layers, in particular, deep diffusion into the GaAs layer 2. Thus, a large amount of surface states are actually formed at the interfacial region of the Si02 and GaAs layers. Such interface states formed at the interface of SiO2 and GaAs layers will deteriorate the characteristics of a MESFET when an SiO2 layer is used as a passivation layer for a GaAs active layer in the MESFET. Next will be discussed the RF characteristics of GaAs MESFETs in relation to surface states. Figure 3a, 3b, and 3c illustrate GaAs MESFETs in which 11 denotes a semi-insulating GaAs substrate which includes a GaAs buffer layer not shown in the figures, 12 a GaAs active layer, 13 a recess, 14 a source electrode, 15 a drain electrode, 16 a gate electrode, and 17 a passivation layer. The MESFETs in Figs. 3a, 3b, and 3c are similar to each other and are formed on the same wafer, but have different recess lengths L1, L2 , and L3 of 1 vm, 2 vm, and 3 Wm, respectively. These three MESFETs in Figs. 3a, 3b, and 3c are hereinafter referred to as A-Type, B-Type, and C-Type MESFETs, respectively. It is known that the length Ln of the recess has a remarkable influence on the RF characteristics of such MESFETs. For example, the input-output characteristics, etc. (shown in Fig. 4) of the above-mentioned three types of MESFETs with a gate width Wg of 0.6 mm were obtained by operating them at 16.5 GHz, a source-drain voltage V SD of 10 V, and a source-drain current ISD of 75 mA. In the figure, o, ¯, and# a represent the RF characteristics of the A-Type, B-Type, and C-Type MESFETs, respectively. Referring to the figure, in the A-Type MESFET, while the linear gain is approximately 6 dB, the input-output characteristic is excellent, since the characteristic line is substantially linear without saturation of the output up to approximately 20 dBm of input, and the power added efficiency madd then reaches up to 30%. The gate leakage current at RF operation Ig (RF) however becomes extremely large in the minus direction, which eliminates practical use. In the B-Type, the linear gain is approximately 8 dB, the saturation of output begins from approximately 14 dBm of input, and the power added efficiency nadd is 15% or more. The gate leakage current Ig (RF) becomes approximately some hundreds of micro Amperes in the minus direction and then turns toward the plus direction as the input power increases. In the C-Type, while the linear gain is as high as 10 dB, the saturation of output power begins from 10 dBm of input and the power added efficiency #add often does not reach as much as 15%. The gate leakage current Ig (RF) is small, and a few micro Amperes in the minus direction, and turns toward the plus direction when the input increases up to approximately 20 dBm. While a-MESFET is ideal if no gate leakage current Ig (RF) is carried, the saturation of output power does not occur untill input power is increased, and the power added efficiency is higher than 30%, in practice, a C-Type MESFET having a small the gate leakage current Ig (RF) selected for reliability, or an intermediate one between C-Type and B-Type MESFETs is chosen for optimization. The reasons for this influence of the recess length Ln on the high frequency characteristics of MESFET is not known, since the RF characteristics of such three types of MESFETs are remarkably different, as shown in Fig. 4, but the DC characteristics of such MESFETs are not significantly different from each other (the DC characteristics are drain-source current vs drain-source voltage (IDS-VDs) characteristics. However, a group including M. Ozeki, one of the inventors of the present invention, clarified this problem by measuring the frequency characteristic of the transconductance gm of a GaAs MESFET (M. Ozeki, K. Kodama, and A. Shibatomi, "Surface Analysis in GaAs MESFET by Frequency-Dispersion Measurement of Transconductance", 9th International Symposium on GaAs and Related Compound, Inst. of Phys. Conf., Ser. 63, pp 323-328). Figure 5 is a block diagram of a circuit used in the above surface analysis for determining the frequency dispersion of transconductance gm.. In the figure, OSC represents an oscillator, DCS a direct current source, BC a bias circuit, MC a matching circuit, SAM a sample, WBA a wide band amplifier, PSA a phase-sensitive amplifier, and DCA a direct current amplifier. In this circuit, measurement is carried out by applying a gate bias and a drain bias to a sample, and then applying low power level input signals at various frequencies to the gate of the sample. Figure 6a is a graph of the frequency characteristic of the transconductance gm of a GaAs MESFET, and Fig. 6b is that of the GaAs MESFET in which the SiO2 passivation layer is removed, e.g., by chemical etching. The characteristics shown in Figs. 6a and 6b are measured by the measurement circuit shown in Fig. 5 and normalized to the transconductance gm at 0.2 Hz. In the measurements, the drain-source voltage VDS is applied at 0.05 V and the gate-source voltage VGS at -0.5 V. Frequency dispersion of the transconductance occurs between 100 Hz and 200 Hz (see Fig. 6a) while the frequency dispersion of the transconductance disappears (see Fig. 6b). Therefore, it is recognized that the frequency dispersion of the transconductance conductance is caused by the condition of the surface of the active layer of the MESFET. Figure 7 illustrates the frequency dispersion of the transconductance gm when varying the gate bias voltage Vg of the same sample shown in Fig. 6a, the varied gate bias voltages V being 0 V, -0.5 V, -1.0 V, g and -2.0 V. In the figure, the frequency dispersion of the transconductance decreases with the depth of the gate bias voltage V (i.e., increasing the gate bias g voltage V in the minus direction), and has almost g disappeared at a Vg of -2.0 V. This suggests that the above-mentioned frequency diapers ion of the transconductance is is remarkably influenced by a surface depletion layer based on the surface state when a depletion layer formed under the gate by gate bias is as shallow as the surface depletion layer based on the surface state, but it is not influenced by the surface depletion layer when a depletion layer by the gate bias is substantially deeper than the depletion layer based on the surface state. Figure 8 illustrates the frequency dispersion of the transconductance of of GaAs MESFETs which are fabricated in each of two halves cut from a single wafer, and by the same process, except for using an SiO2 layer and an Si3N4 layer as a passivation layer, respectively. In the measurement, the drain-source voltage VDS and the gate-source voltage VGS are 0.05 V and -0.5 V, respectively. In the figure, the MESFET using an SiO2 passivation layer has a frequency dispersion between 100 Hz and 200 Hz (Curve A), while the MESFET using an Si3N4 passivation layer has a frequency dispersion at 10 Hz (Curve B). This suggests that the characteristics of a MESFET, more particularly those at the interface with a passivation layer, are largely influenced by the kind of passivation layer used. The frequency dispersion at 105 Hz (see Fig. 8b, Curve C) is considered to be caused by trapping at the interface of an active layer and a buffer layer. Figure 9 illustrates the frequency dispersion of the transconductances gm of the before-mentioned A-Type, B-Type, and C-Type MESFETs having various recess lengths Lnff the measurement of which is conducted at 0.05 V of the drain-source voltage and -0.5 V of the gate-source voltage, the transconductance gm being normalized. It can be seen from the figure that the degrees of decrease of the transconductance g## in the region of a higher frequency are increased as the recess length L becomes longer. It was experimentally confirmed that, while this measurement is conducted at -0.5 V of gate-source voltage, the degrees of the lowering of the transconductances gm are decreased and the difference of those degrees disappear between the three types as the absolute value of the gate bias is increased in the minus direction, as can be seen in Fig. 7. These experimental results make it possible to explain the difference of the linearities of the input-output characteristics shown in Fig. 4. If the I-V characteristics of GaAs MESFETs can be determined at an input frequency of 16.5 GHz, they will be as shown in Figs. 10a and 10b. Figure 10a shows the characteristic for a MESFET, such as a C-Type, having a long recess length L3 and having poor linearity of the input-output characteristic. Figure 10b shows the characteristic for a MESFET, such as an A-Type, having a short recess length L1 and having good linearity. These two types of MESFETs biased at a drain-source voltage of +10 V show good linearity of the input-output characteristic, if the input signal is small. However, the source-drain current IDS will be saturated in the region R (see Fig. 10a) if the input signal VDS becomes large. This means that when an input power increases, the amount of change of the source-drain current ISD is not proportional to the input power. However, such an nonproportional output power does not appear in Fig. 10b. From the above, we can assume that surface states are formed at the surface of a GaAs MESFET, more particularly, at the surface of a GaAs active layer of the GaAs MESFET, by influence from a passivation layer. Due to the surface states, a surface depletion layer appears from the surface toward the inside of the active layer, giving an adverse influence on the change of amplitude of the gate voltage, and deteriorating the linearity of the input-output characteristic of the MESFET. In an embodiment of the present invention, an Al Ga As layer is used as a passivation layer for a GaAs active layer, which can help to reduce this problem. Figure 11 illustrates an apparatus for growing an Al Ga As layer in which 21 denotes a reaction chamber, 22 a RF coil (work coil), 23 a gas feed pipe, 24 an exhaust pipe, 25 a carbon susceptor, 26 a mirror, 27 an infrared radiation thermometer, and 28 a substrate to be treated; the susceptor 28 being able to rotate in the reaction chamber 21, and the substrate being composed of GaAs. The growing of an AlxGa As layer by the apparatus shown in Fig. 11 is described in the following. A GaAS substrate 28 is placed on the carbon susceptor 25 heated by the work coil 22, the temperature of the substrate 28 or the susceptor 25 being monitored by the infrared radiation thermometer 27. The gas feed pipe 23 feeds the source gases, Al Gal As, of trimethyl aluminum (TMA, Al(CH3)3), trimethyl gallium (TMG, Ga(CH3)3), and arsine (AsH3), and a carrier gas of hydrogen (H2), the flow rates and flow directions of which are initially precisely controlled at a gas control portion comprising valves and flow meters, etc. The growth of the AlxGa1-xAs occurs by pyrolysis of the TMA, TMG, and AsH3 at the surface of the GaAs substrate 28 heated by the carbon susceptor, with the reactions shown below: EMI14.1 Figure 12 is a graph of the x value of Awl a As versus the mole ratio of TMA to TMA plus TMG. The mole ratio is varied by maintaining the flow rate of TMG constant at 30 cc/min, and by changing the flow rate of TMA. The growth temperature of Al Ga As is set at x l-x 7000C. The x value is determined by an X-ray double crystal method. As can be seen in Fig. 12, the x value is increased with the increase of the concentration of Al, i.e., the flow rate of TMA. Figure 13 illustrates the growth rate of an Awl a As layer. The flow rates of TMG and TMA are x selected to be the same and to produce a layer of Al Gal As wherein x is 0.3 at the growth temperature of 7000C, and are 8.1 cc/min, 5.4 cc/min, and 2.7 cc/min. Varying the growth temperature, the growth rates of an Alo 3Ga0 7As layer are plotted while keeping the flow rates of TMG and TMA constant. Generally speaking, the growth rate tends to decrease with the increase of the growth temperature, the degree of the change being larger if the feed rate of the III-group elements of the Periodic Table is larger. The growth rate is approximately proportional to the feed rate of the Ill-group elements at a temperature below 750 C. The growth rate of an AlxGa 1#xAs layer also varies according to the total flow rate of the gases. The growth rate is 0.027 #m/min at a total flow rate of 400 cc/min and 0.067 vm at 1000 cc/min, between which they are in a linear proportion relationship. This has been confirmed by experiment. Figure 14 illustrates the uniformity of an Al Ga As layer. In the graph shown in Fig. 14, x the axis of the abscissa represents the position in a wafer, and the axis of the ordinates represents the thickness of the layer, normalized by the maximum thickness. The total flow rate of the gases is a parameter selected at 1000 cc/min, 400 cc/min and 300 cc/min. As can be seen in the figure, a rapid decrease of the thickness of the layer appears at 1000 cc/min, more particularly, a 25% decrease appears in a 9 mm distance. However, the thickness of the layer is considerably uniform at a decreased flow rate, and the deviation of the thickness is less than +5% over a 20 mm length at 300 cc/min of the total flow rate of the gases. A description of evaluation made of an Al Ga As K layer and the surface of a GaAs active layer is given below. In a GaAs MESFET using an Al Gal As passivation layer, the most important characteristics are the surface states at the interface of the passivation layer and the GaAs active layer and the withstand voltage of the passivation layer as an insulating layer. In an MIS diode in which the insulator is of high resistive AlxGal xAs and the semiconductor is of n-type GaAs, and the structure of which is similar to the MIS diode shown in Fig. la, an n-type GaAs active layer 32 is formed on an n -type GaAs substrate 31 by CVD without dopant. The resultant n-type GaAs active layer 32 has a carrier concentration of 5 x 1015 to 106 cm The wafer in which the n-type GaAs layer 32 has been formed is taken out of the CVD apparatus before an Al Ga As layer 33 is formed on the n-type GaAs layer 32. This removal of the wafer is effected because, in the fabrication of a GaAs MESFET, an n-type GaAs active layer 32 is treated so that current to be carried in the active layer 32 during operation of the FET is controlled, which necessitates that the wafer be taken out of the CVD apparatus for the above-mentioned treatment. Such a removal of the wafer will deteriorate the surface of the n-type GaAs active layer 32. Therefore, the evaluations made include such a removal of the wafer. The surface of the n-type GaAs active layer 32 is etched in the thickness of approximately 1.5 vm with an etchant comprising 90% H2 SO4 , 5% H202 , and 5% H2O at 300 K for 30 seconds. The resultant wafer is then placed for 4 minutes in a gas flow of AsH3 at 8000C, and an Al Ga As passivation layer 33 is grown for 50 minutes at 8000C while keeping the mole ratio of As/Ga + Al in a feed gas mixture at 40. The resultant AlxGal xAs layer 33 has an x value of 0.55 and a thickness of 1.4 iim. A part of the AlxGal-x As passivation layer33 x l-x passivation layer 33 and the n-type GaAs active layer 32 is selectively etched to expose the surface of the n -type GaAs substrate 31 on which a gold-germanium/gold (Au.Ge/Au) layer is formed by vapor-deposition and heat-treated for 2 minutes in a gas flow of nitrogen at 4500C, to-form an electrode 34. A gold (Au) layer is deposited onto the AlxGa1-xAs layer 33 to form another electrode 35. On the resultant samples of an MIS diode, the capacitance-voltage (C-V) characteristic is investigated in order to determine the amount of interface states, and the current-voltage (I-V) characteristic is checked in order to determine the withstand voltage of the AlxGa1-xAs passivation layer. An apparatus shown in Fig. 16 is used for the C-V characteristic measurement since it is necessary to change the frequency. In the figure, 41 denotes a lock-in amplifier (PAR 126 produced by PAR), 41A a comparison output terminal, 42 a current amplifier (PAR 194 produced by PAR), 43 a function generator, 44 an X-Y recorder, 46 a ceramic condenser of, e.g., 0.1 pm, 46 an oxide-coated resistance of 200 kn, and 47 a sample. In operation, a sine wave voltage of 0.1 V P-P, from the comparison output terminal 31A of the lock-in amplifier 41, is applied to the sample 47, and the current carried through the sample 47 is amplified by the current amplifier 42 and measured. The components of the current, the phases of which are the same as and 900 shifted from the phase of the input voltage, correspond to conductance and capacitance respectively. Corrections of the absolute value and the phase of the capacitance C and the gain G are effected by the ceramic condenser 45 and the oxide-coated resistor 46. The measurement frequencies are 110 Hz, 1 kHz, 10 kHz, 100 kHz, and 1 MHz. The capacitance at 1 MHz is measured by a capacitance meter Boonton 72B. Figures 17 and 18 are graphs of the C-V characteristic and G-V characteristic at a room temperature of 295 K, with measuring frequencies of 110 kHz, 1 kHz, 10 kHz, 100 kHz, and 1 MHz, the sweep speed of the voltage #3r being 2 V/min. As can be seen from the figures, upon reverse bias, no hysteresis appears in the C-V and G-V characteristics at various frequencies. The C-V characteristics and G-V characteristics each are the same at the frequency of above 1 kHz. In particular, the conductance G being zero within the deviation of measurement value. It is recognized that the interface state density wherein the charged states can follow an input since 10 -2 -I wave voltage of above 110 Hz is 10 cm eV 1 or less, based on the Terman method. Thus, the interface state density of the interface of the Al Ga As layer and the GaAs layer is 1010 cm eV#1 or less, based on the Terman method. In the figures, upon forward bias, right-handed rotation hysteresis appears in the C-V characteristic and the G-V characteristic. Upon forward bias, electrons are injected into the Al Gal, As passivation layer from the GaAs active layer. At an increased bias voltage, the injected electrons are caught in deep states (trape) in the Awl a As passivation layer. The time constant of this catch is given by nCn , wherein n is the injected electron density and Cn is the probability of that catch. As the injected electron density is low, the time constant of the catch is later than the changing rate of the input voltage. When the bias voltage is increased, the space charge density in the AlxGal xAs layer becomes higher and, therefore, the capacitance is increased, resulting in a righthanded rotation hysteresis. The capacitance is increased upon decrease of the frequency. It is considered that this phenomenon occurs since electric charges in the Al Ga, As layer, which charges follow the change of the input sine wave voltage, are increased as the frequency is lowered. In Fig. 19, the carrier concentrations in the GaAs active layer before and after the formation of the Awl a As layer are compared. The carrier concentration after the formation of the AlxGa 1#xAs layer is determined from the C-V characteristic at reverse bias. Complete depletion approximation is used for calculating the capacitance of the depletion layer in the GaAs active layer. This hypothesis can be applied at an interface potential of 0.5 V or above. Figure 20 shows the interface potential in relation to the applied voltage. As seen in the figure, at the applied voltage of 3.0 V or more, the interface potential becomes below the valence band, but inversion does not occur. This is because holes will flow away through the AlxGal xAs passivation layer since the step between the valence bands of the Al Gal As passivation layer wherein x is 0.55 and the GaAs active layer is as low as approximately 0.05 eV. Figure 21 is a graph showing the I-V characteristic. As shown in the figure, the current is increased in proportion to the square of the voltage at forward bias. This phenomenon occurs when a spacecharge limited current is carried during injection of an almost single carrier, and suggests that electrons are injected into the Al Ga As passivation layer from x the GaAs active layer. Further, the graph shows that the resistivity of the Awl a As passivation layer is 108 Qcm or more. From the I-V characteristic in the forward direction measured by a curve tracer, the breakdown voltage is found to be approximately 10 V. From this, it is confirmed that the withstand voltage of the Al Ga As passivation layer is approximately 7 kV/cm. Figure 22 illustrates the capacitance of MIS diodes in relation to the applied voltage, the MIS diodes having an Al#Ga xAs passivation layer other than that described above, wherein TG is the growth temperature. As can be seen in the figure, while hysteresis upon reverse bias appears in the sample wherein x is 0.47 and TG is 700 C, all C-V characteristics are completely different from that of the sample in Figs. la and Ib, and show that the interface states are 1010 cm#2eV or less in all cases. Auger analysis is carried out on an MIS diode having an AlxGa1-xAs passivation layer on a GaAs active layer and made in the manner described before. Figure 23 is the resultant profile of Al mole fraction in the direction perpendicular to the interface of the AlxGa1-xAs passivation layer and the GaAs active layer. It is seen that the Al mole fraction sharply decreases near the interface of the two layers, and substantially no Al is present in the GaAs layer. This means that interdiffusion between the components of the two layers did not occur, resulting in the disappearance of the interface states. Thus, according to the present invention, there is provided an AlxGa1-x As layer in which the l-x10 -2 interface states are 101 cm eV or less and the resistivity is 108 flcm or more. The fabrication of GaAs MESFETS according to an embodiment of the invention is described below with reference to the drawings. Referring to Fig. 24, a GaAs buffer layer 52 and an n-type GaAs active layer 53 are continuously epitaxially grown onto an semi-insulating GaAs substrate 51 of, e.g., approximately 106 flcm resistivity and approximately 400 vm thickness, the n-type GaAs active layer 53 having a doped impurity concentration of 1.5 x 1017 cm and a thickness of approximately 0.5 vm. So-called mesaetching is conducted for isolation of the n-type GaAs active layer 53, and selective etching is conducted to form recesses 53A in the top surface of the n-type GaAs active layer 53. The depth of the recess 53A depends on the current to be carried between a source and a drain. For example, the depth and length L of the recess 53A are 200 to 300 nm and 1.5 to 2 um respectively. Referring to Fig. 25, an Al Ga As passivation layer 54 of, e.g., approximately 500 nm, is formed over the n-type GaAs active layer 53 and the semi-insulating GaAs substrate 51 in the region exposed by the mesa etching. The process for forming the Algal As layer 54 is the same as described earlier, wherein x is, for example, 0.3. Referring to Fig. 26, the AlxGa1#xAs passivation layer 54 is selectively etched by using a resist as a mask to open source contact windows and drain contact windows, An Au¯Ge/Au layer is formed by vapor deposition. The resist is then removed together with the Au¯Ge/Au layer superimposed on the resist, that is to say lift-off is effected for patterning. Heat treatment is conducted at 4500C for 2 minutes to make ohmic contact. Thus, source electrodes 55S and drain electrodes 55D are formed. The AlxGa 1#xAs passivation layer 54 is again selectively etched by using a resist as a mask, to open gate contact windows, and an Al layer is deposited. The resist is then removed together with the Al layer superimposed on the resist, to form gate electrodes 56G. Referring to Fig. 27, an SiO2 layer 57, e.g., 600 nm thick, is formed by CVD. The following process for fabricating GaAs MESFETs is conventional. For example, the SiO2 layer 57 is patterned to form sourceelectrode-extending windows, drain-electrode-extending windows, and openings for bonding pads. An Au¯Ge/Au layer 58 is formed and patterned to form source-electrode-extending lines 58S, drain-electrode-extending lines 58D, and bonding pads 58P. The bonding pads 58P are formed directly on the Al Ga1 As passivation layer 54 since the SiO2 layer 57 is easily separated from the AlxGal¯xAs layer 54. The transconductance gm of the thus obtained GaAs MESFET is measured by the method described before with reference to Fig. 5. Figure 28 illustrates the results obtained from the measurement. It is seen in the figure that the frequency dispersion of the transconductance gm hardly appears even if the gate bias voltage VG is changed from 0 V to -4 V. Therefore, the linearity of input power-output power characteristic will be clearly improved in this GaAs MESFET. Figure 29 illustrates the high frequency characteristics of GaAs MESFETs having an Awl a As passivation layer according to an e#Tbodb#nt of the invention and an SiO2 passivation layer in the prior art, respectively. In Fig. 30, if applied to the three types of MESFETs described earlier with reference to Fig. 2, the GaAs MESFET edbxtring the present invention corresponds to the C-Type, and the GaAs MESFET having an SiO2 passivation layer corresponds to an intermediate one of the A-Type and B-Type. Correspondence of the GaAs MESFET according to the present invention to a C-Type is suggested by the fact that no gate leakage current is carried. The GaAs MESFET having an SiO2 passivation layer is considered to be similar to the A-Type due to the linearity of the input power-output power characteristic, the power added efficiency, and the gate leakage current. The GaAs MESFET embodying the present invention has an excellent linearity of the input power-output power characteristic, and its power added efficiency reaches up to 25%, although it belongs to the C-Type. Thus a GaAs MESFET having a high efficiency and without the appearance of gate leakage current can be provided by an enbodirr#nt of the present invention. Figure 30 illustrates another embodiment of a GaAs MESFET according to the present invention, which is similar to a GaAs MESFET shown in Figs. 24 to 7. In this embodiment, however, a refractory metal or a silicide thereof, for example, titanium tungsten silicide, is used as the material of a gate elec trode 66G and an Awl a As passivation layer 64 is formed not only on the exposed surface of an n-type GaAs active layer 63 between electrodes 65S, 65D and #6G, but also on the gate electrode 66G. Since a refractory metal or a silicide thereof can keep excellent Schotky contact with GaAs at a higher temperature, for example, at approximately 8000C, the Al Gal As passivation layer 54 can be formed after the gate electrode 66G of a refractory metal or a silicide thereof is formed, which allows the once removal of the alignment of a mask. Examples of the sizes in the figure are as follows: length of a recess - 1.5 pm, depth of the recess 300 nm, length of a gate 66G - 1.0 pm, distance between source and drain electrodes 64S and 64D - 5 pm. A GaAs MESFET according to the present invention may be fabricated by using ion implantation technique. Referring to Fig. 31, an n-type active region 72 is formed in a semi-insulating GaAs substrate 71 by ion implantation of Si at 140 keV and 3 x 1012 cm 2, resulting in a doped carrier concentration of 1 x 1017 -3 cm . A gate electrode 76 of a refractory metal or a silicide thereof is formed on the surface of the n-type active region 72. An Al Ga As passivation layer 74 is formed on the n-type active region 72 and on the gate electrode 76. The AlxGa1#xAs passivation layer 74 is selectively etched to fbrm source and drain electrode contact windows through which selective ion implantation 13 -2 of Si at 120 kV and 2 x 10 cm is conducted to form an n+-type source region 73S and an n -typeis drain region 73D. A source electrode 75S and a drain electrode 75D are formed in the source and drain electrode windows, respectively. An SiO2 layer 77 is also formed. The above descriptions are made with reference to Al Ga As and GaAs which are used for a passivation x layer and an active layer, respectively, in a MESFET. However, similar improvement of the characteristics of a MESFET using a component semiconductor active layer can also be provided by other combinations of compound semiconductors. as a passivation layer embodying to the present invention may have a lattice constant similar to that of an active layer of a compound semiconductor, which allows the prevention of the formation of interface states at the interface of the two compound semiconductor layers, or at least to decrease such interface states. The fact of such prevention or decrease was confirmed by the inventors of the present invention. Further, a passivation layer according to an eSxxEment of the invention can be used not only in power transistors but also in other MESFETs, including those in various ICs.

Claims: CLAIMS 1. A MESFET comprising: a) an active layer (53) made of a first compound semiconductor; b) source and drain electrodes (55S, 55D) on and in contact with the top surface of said active layer and spaced from each other; c) a gate electrode (56G) on and in contact with the top surface of the said active layer and between and spaced from said source and drain electrodes; and d) an insulating or semi-insulating layer (54) made of a second compound semiconductor covering the top surface of said active layer between said source, drain, and gate electrodes, characterised in that the constituent elements of the said second compound semiconductor include at least one of the constituent elements of said first compund semiconductor, and in that the second compound semiconductor has a forbidden band gap wider than that of the said first compound semiconductor. 2. A MESFET according to claim 1, wherein said second compound semiconductor has a lattice constant similar to that of said first compound semiconductor. 3. A MESFET according to claim 1, wherein said first compound semiconductor is gallium arsenide and said second compound semiconductor is aluminum gallium arsenide. 4. A MESFET according to claim 3, wherein said aluminum gallium arsenide has the formula Al AlxGal xAs x wherein x is between 0.2 and 0.5. 5. A MESFET according to claim 4, wherein said x is 0.3. 6. A MESFET according to claim 3, 4 or 5, wherein said aluminum gallium arsenide has a resistivity of approximately l08Acm. 7. A MESFET according to claim 3, 4, 5 or 6, wherein said aluminum gallium arsenide has its said forbidden band gap between 1.7 eV to 1.95 eV. 8. A MESFET according to claim 3, 4, 5 or 6, wherein the forbidden band gap of the second semiconductor material is approximately 1.8 eV. 9. A MESFET according to claim 3, 4, 5, 6, 7 or 8, wherein the said aluminum gallium arsenide has a lattice constant of approximately 5.65 A (0.565 nm). 10. A MESFET according to claim I, wherein said first compound semiconductor is indium gallium arsenide having the formula In Ga, As wherein x is 0.53, and said second compound semiconductor is indium phosphide. 11. A MESFET according to claim 1, wherein said first compound semiconductor is indium gallium arsenide having the formula In Ga As wherein x is 0.53, and said K second compound semiconductor is aluminum indium arsenide having the formula Al In As wherein y is 0.48. y l-y 12. A MESFET according to claim 1, wherein said first compound semiconductor is indium phosphide and said second compound semiconductor is aluminum indium arsenide having the formula AlXIl xAs wherein x is 0.48. 13. A MESFET according to any preceding claim, having conducting lines (58) extending from said source, drain, and gate electrodes, and having bonding pads (585) connected to those lines, wherein said insulating or semi-insulating layer extends under the conducting lines and the bonding pads. 14. A process for fabricating a MESFET, said process comprising the steps of: forming an active layer (53) of a first compound semiconductor extending over a semi-insulating substrate (51); forming an insulating or semi-insulating layer (54) of a second compound semiconductor on the top surface of said active layer, said second compound semiconductor being composed of constituents including at least one of the constituents of said first compound semiconductor and having its forbidden band gap wider than that of said first compound semiconductor; and, forming a source electrode (55S), a drain electrode (55D), and a gate electrode (56G) in contact with said active layer by opening a window in said insulating or semi-insulating layer and providing a metal layer-form electrode within the window. 15. A process according to claim 14, wherein, after forming the active layer, the active layer and the semi-insulating substrate thereunder are selectively mesa-etched to form an island of said active layer, and said insulating or semi-insulating layer is then formed not only on the island of said active layer but also on said semi-insulating substrate exposed by said mesa-etching, whereby when conducting lines extending from said electrodes, and bonding pads connected to those lines, are formed, said insulating or semi-insulating layer separates the said conducting lines and bonding pads from the said semi-insulating substrate and the said active layer. 16. A process for fabricating a MESFET, said process comprising the steps of: forming an active layer of a first compound semiconductor on a semiconducor substrate; forming a recess in the surface of said active layer at the region where a gate electrode should be formed; forming a gate electrode in contact with said active layer in said recess; forming an insulating or semi-insulating layer of a second semiconductor on the top surface of said active layer and said gate electrode; forming source and drain electrodes in contact with said active layer by opening windows in said insulating or semi-insulating layer, making a metal layer in the windows and patterning the metal layer. 17. A process for fabricating a MESFET said process comprising the steps of: ion implanting into a semi-insulating substrate of a first compound semiconductor to form an active layer adjacent to the top surface of the semi-insulating substrate; forming a gate electrode in contact with the top surface of said active layer; forming an insulating or semi-insulating layer of a second compound semiconductor onto said active layer and on the gate electrode; opening windows for source and drain electrodes in said insulating or semi-insulating layer; selectively ion implanting through the window into said active layer to form source and drain regions; and forming source and drain electrodes in contact with said active layer in the windows.

Inventors: HIRACHI, YASUTAKE, KASAI, KAZUMI, OZEKI, MASASHI, TAKEUCHI, YUKIHIRO, TAKIKAWA, MASAHIKO
Applicants: FUJITSU LIMITED
Application year: 1984
Main classification: H01L23
IPC codes: H01L23, H01L21, H01L29