SEMICONDUCTOR STRUCTURE HAVING A VOLTAGE LEVEL SHIFTER

Abstract: A voltage level shifter has N enhancement-mode FET's (Q1, Q2, and Q3) whose polarities are the same in the case where N is greater than 1 with the drain of each FET except the Nth FET coupled to the source of the next FET. Each FET has its drain coupled to its gate. An input voltage is supplied to the source of the first FET (Q1). An output voltage at a different level is taken from the drain of the Nth FET (Q3). In the structure for the level shifter, the source (S1, S2, or S3) and drain (D1, D2, or D3) of each FET are of a first conductivity type and lie in a well (20) of an opposite second conductivity type that lies in a semiconductive substrate region (16) of the first conductivity type. In the semiconduc­ tor structure a reverse-biased diode (DP) is coupled between a supply of a fixed reference voltage (V SS ) and the channel of each FET. The well/diode extends the range of the input voltage.

Description: Semiconductor structure having a voltage level shifter. This invention relates generally to semiconductor structures and electronic circuits for voltage level shifters and more particularly to an integrated semiconductor structure comprising a semiconductor body and having a voltage level shifter with one or more enhancement-mode field effect transistors, each of said field effect transistors having a source, a draS4 a channel region extending therebetween and a gate electrode for controlling a main current path of said field effect transistor which connects said source to said drain, said gate electrode being coupled to said drain, a circuit path connecting an input node tó an output node and comprising sail main current path of each of said one or more field effect transistors, in said circuit path each of said one or more field effect transistors having its source connected nearer to said input node than its drain, said source and drain being of a first conductivity type and being accomodated in a semiconductive substrate region of said semiconductor body. Integrated semiconductor structures of this kind are described in U.S. Patent 4,163,161. BACEGROUND ART Some conventional circuits employ a chain of likepolarity insulated-gate field-effect transistors (ETts) responsive to an input voltage for providing an output voltage at a different level. Each FET has its drain connected to its gate electrode. In U.S. Patent 4,152,716 S. Torii et al disclose a metal-oxide semiconductor (MOS) circuit in which the chain of FETUS is a conductive voltage divider. The drain of the FET at one end of the chain receives the input voltage, while the source of the FET at the other end is grounded. The output voltage is taken from one of the FET electrodes between the ends of the chain. The FET-s are operated in deep saturation, such that the output voltage is a given fraction of the input voltage depending on the effective PET conductances. Although-this voltage divider appears to provide good voltage division, operation is not open ended because the source of the FET at the second end of the chain must be tied to a fixed voltage. This is disadvantageous in low-power applications such as CMOS. Each of the serially-connected FETZs in this voltage divider of Torii et al is typically an N-channel device whose source and drain lie in its own P well. The source of each FET is short-circuited to its well. All the P wells lie alongthe surface of an N-type semiconductor substrate shown as tied to the input voltage. The greatest reverse voltage difference across any PN junction in the structure exists between the substrate at the input voltage and the particular well at ground, rather than along the boundary for the source of the FET in this well which would be the case in the absence of the wells. This voltage difference is limited to the well-substrate junction breakdown voltage v It is typically significantly larger than the breakdown voltage V of the PN Junctions at the EDS/D source/drain boundaries. As a result, the wels enable the input voltage to exceed ground by more than VBDS/D. Torii et al also describe another MOS voltage divider containing a chain of N-channel PET1s whose sources and drains all lie in a single P well alongthe surface f an N-type semiconductor substrate. This divider differs from the previous one in that Torii et al recite that the input voltage is supplied to the gate electrode of each PET in this divider. Here, the input voltage cannot exceed ground by VBDS/D or more. In U.S. Patent 4,163,161, referred to in the preamble of this description W. Walker discloses another MOS circuit which produces an output voltage at a specified level by using a chain of N insulated-gate enhancement-mode FET's, each having its drain connected to its gate electrode These FETUS are preferably P-channel devices that form part of the feedback loop in a voltage regulator. The regulated voltage is supplied as the input voltage to the source of the first PET at one end of the chain. The output voltage is supplied from the drain of the last or Nth PET at the other end at a voltage level which differs from the input (regulated) voltage by an amount equal to the composite PET threshold voltage- i.e., the sum of the threshold voltages of the individual FET's. The output voltage controls one NPN bipolar transistor which, in turn, so controls another NPN bipolar transistor whose emitter is connected to the source of the first FET as to stabilize the input voltage at a level depending on the composite threshold voltage. Although Walker always employs at least two FET1s in his chain, its principle of operation appears applicable to the situation in which there is only one FET. Walker discloses that the PET1s are formed in a conventional manner with their P-type sources and drains lying alongthe surface of an N-type semicondiictivve substrate region of a semiconductor body. If, the substrate region is held at the input voltage, the difference between the (input) voltage of the substrate region and the output voltage at the drain. of the Nth PET is then the greatest reverse voltage difference that exists across any PN junction in the structure. This voltage difference is limited to V That is, the output voltage can differ from the substrate voltage by no more than VsA so as to correspondingly limit the maximum value of the input voltage. This is disadvantageous where a higher value of the input voltage is needed. DISCLOSURE OF THE INVENTION The invention encompasses a semiconductor structure in which a voltage level shifter has N enhancement-mode FET's, each having its drain coupled to its gate electrode. The FET1s are designated sequentially as the first FET through the Nth PET, which are the same in the situation where N equals one. An input voltage is supplied to the source of the first PET. An output voltage at a different level is provided from the drain of the Nth PET. The FET1s are of like polarity in the situation where N is greater than one with the drain of each PET except the Nth FET coupled to the source of the next FrET' In the structure, the source and drain of each PET lie in a semiconductive substrate region of a semi conductor body. The substrate region is of a first conductivity type and contains a primary well of a second conductivity type opposite to the first conductivity type. The source and drain of each PET are of the first conduc tivity type and lie in the well. A primary diode formed by the well and substrate region is coupled between a supply of a substantially fixed reference voltage and the channel of each PET. The conductive direction in which the diode is connected is such as to reverse bias it with the circuit so arranged that the absolute value of the difference between the input and reference voltages exceeds the absolute value of the difference between the output and reference voltages. The well and consequently the channel of each FET are preferably maintained at the input voltage. In this way, the difference between the input voltage at the well and the voltage of the substrate region is the greatest reverse voltage difference that occurs across any PN junction in the structure. This difference is limited to VBDW,S which, as previously mentioned, is significantly higher than VBDS/I)0 Accordingly, the input voltage is not fixed at the substrate voltage. This provides a greater voltage operating range than in the Walker device: Within the well, the difference between the input and output voltages at the drain boundary of the Nth PET is the largest reverse voltage difference across any of the source/drain boundaries. As a result, the output voltage should differ from the input voltage by no more than VBDS/D. The output voltage equals the input voltage plus the composite threshold voltage of the N PET's. This pro vides open-ended operation so as to avoid the low-power disadvantage of Torii et al. Where N is greater than one, this is suitably achieved by making the drain of each FET except the Nth FET substantially integral with the source of the next FET. The present structure is suited for application where the substrate region contains adevice well of the second conductivity type. The source and drain of a likepolarity device FET lie in the device well. The input voltage is typically an external supply voltage, while the output voltage is a level-shifted on-chip supply voltage provided to the source of this FET and normally also to the device well. If the drain voltage of this PET can go to the substrate voltage (which is the reference voltage in the integrated circuit), the difference between the output and substrate voltages is thereby limited to VBDS/D. This is significantly better than that available with Walker. Since the structure already contains at least two wells, it is readily adapted for CMOS by simply including the source and drain of an opposite-polarity PET in the substrate region outside the wells. Each FET is an insulateS gate device whose source and drain are located along a surface of the substrate region. Desirably, the input voltage does not serve as a supply for any other on-chip devices. The difference between the input and substrate voltages is then constrained to a maximum of about 2VBDS/D.2VThis is also significantly better than that available with Walker. Alternatively, the substrate region contains a second device well of the second conductivity type. The source and drain of a like-polarity second device FET lie in the second device well. The input voltage is provided to the source of this FET and normally also to the second device well. If the drain voltage of this PET can go to the substrate voltage, the difference between the input and substrate voltages is further constrained to VBDS/D. This alternative thus provides additional design flexibility at the loss of operating range. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a cross-sectional side view of a CMOS structure containing a voltage level shifter as in the invention. Fig. 2 is a circuit diagram of the structure of Fig. 1. Fig. 3 is a circuit diagram containing the elements of Fig. 2 plus an additional device operated from the input voltage. Like reference symbols are employed in the drawings and in the description of the preferred embodiments to represent the same or very similar item or items. Each reference symbol in Fig, 1 for a pair of elements formed integrally with each other is a composite symbol consisting of the individual symbols of Fig. 2 or 3 separated by a slash. The electrical connections in dotted lines in Fig. 2 or 3 represent connections not shown in Fig. 1. DESCRIPTION OF THE PREFERRED EMBODIMENTS Referring to the drawings, Fig, 1 illustrates an embodiment of a CMOS structure having a voltage level shifter 10 that converts an external input supply voltage VDDI into an on-chip output supply voltage VDDO at a lower voltage level. This structure also contains a conventional CMOS inverting device 12 which operates between voltage VDDO and a substantially fixed reference voltage Vss which is lower than VDDO. Fig. 2 shows the corresponding circuit diagram for level shifter 10 and inverter 12. Level shifter j O consists of N-serially-connected P-channel enhancement-mode insulated-gate FETss where N is a positive integer. Figs. 1 and 2 show, for example, three such FET's Q1 Q2, and Q3. Each has its drain Dl, D2 or D3 connected back to its gate electrode G1, G2 or G3 respectively. Voltage VDDI is supplied to the source S1 of the first PET Q1, while voltage VDDO is taken from drain D3 of the third (or Nth) FET Q3. The channel of each FET Q1 , Q2, or Q3 is short-circuited back to voltage VDDI. Notably, the channels and thus source 51 are also connected to the cathode of a reversed-biased primary PN diode DP whose anode is connected to the Vss supply. Device 12 consists of a pair of enhancement-mode insulated-gate FET's Q4 and Q5 arranged in an inverting configuration with their respective drains D4 and D5 connected together to provide a logical voltage output signal VOUTA of opposite logical value to a logical voltage input signal VINA applied to their respective gate electrodes G4 and G5 which are also connected together. FET Q4 is a P-channel device whose source S4 receives voltage VDDO and whose channel is short-circuited to voltage VDDO The channel and source of FET Q4 are also connected to the cathode of a reverse-biased device PN diode DA whose anode is connected to the Vss supply. FET Q5 is a complementary N-channel device whose source S5 and channel are both maintained at voltage Vss. Turning particularly to Fig. 1, shifter 10 and device 12 lie along a generally flat surface 14 of a semiconductor body containing a P-monocrystalline silicon semiconductive substrate region 16 in which various P-type, N-type, and electrically insulating regions are formed. P- region 16 is maintained at voltage V550 The monocrystalline conductive elements in shifter 10, inverter 12, and other such an-chip devices are each located in one or more active semiconductor regions laterally separated from one another along surface 14 by portions of a recessed electrically insulating region 18 of silicon dioxide. Oxide-isolation region 18 extends about 6,ooo angstroms below surface 14 and about 4,ooh angstroms above it as well. In shifter 10, the drain Dl of PET Q1 is integral with the source 52 of FET Q2, and the drain D2 of FET Q2 is integral with the source S3 of FET Q3. Source/drain elements S1, D1/S2, D2/S3, and D3 are all highly conductive shallow P, regions located along surface 14 in one active semiconductor region. They all extend about 3,000 angstroms below surface 14 into the underlying silicon. Importantly, P regions Sl, Dl/S2, D2/S3, and D3 all lie in a deep N-well 20 which extends about 5 microns below surface 14 into substrate region 16 to define diode DP. Well 20 thereby extends downward below the bottom of oxide region 18. Well 20 also laterally extends beyond the sidewalls of the portion of region 18 that defines the active region for shifter 10. In device 12, source S4 and drain D4 are highly conductive shallow P+ regions located along surface 14 in one active semiconductor region. Both extend to about the same depth below surface 14 as P+ regions S1, D1/S2, D2/S3, and D3 and lie in a deep N- well 22 that extends to about the same depth as well 20 to define diode DA. Source S5 and drain D5 are highly conductive shallow Nv regions located along surface 14 in another active semiconductor region. Both extend about 3,000 angstroms below surface 14 into substrate region 16. Directly underlying oxide region 18 and surrounding each well 20 or 22 is a highly conductive P+ region 24 that acts to prevent inversion of the doped silicon along region 18. Anti-inversion region 24 also extends partly up the sidewalls of the portion of region 18 that defines the active region for FET Q5. As shownby the "X's" in Fig. l, a P-type impurity implanted in the channel of each PET Q1, Q2, Q3, Q4, or Q5 serves to control its threshold voltage. Overlying the channel for each PET Q1, Q2, Q3, Q4, or Q5 is a corresponding portion of a dielectric layer 26 of silicon dioxide Fove which is located insulated gate G1, G2, G3, G4, or G5, respectively, of doped polycrystalline silicon (polysilicon)O Oxide layer 26 is about 500 angstroms thick. Gates G1-G5 are each about 4,000 angstroms thick. An electrically insulating layer 28 of 8 phosphorus-doped silicon dioxide (Vapox) having an average thickness of about 1ç2 microns overlies oxide region 18 and those portions of dielectric layer 26 not covered by gates G1-G5. Vapox layer 28 also surrounds and partially overlies electrodes G1-G5. An electrically conductive pattern 30 of aluminium with about 1* silicon overlies Vapox layer 28 and extends down to surface 14 through aperturesin layers 28 and 26 and also down to electrodes G1-G5 through apertures in layer 28 to provide the appropriate electrical inter-connections between the various elements in shifter 10 and inverter 12. Conductive pattern 30, which is about 1 micron thick, also provides the electrical connections for transmitting voltages VDDI, VINA (not indicated in Fig. 1), Vss, VDDO, and VOUTA. The portion of pattern 30 that carries voltage VDDI is coupled to the N-portion of well 20 by a highly conductive shallow N region 32 located in well 20 along surface 14 adjacent to source S1 so as to maintain well 20 and thus the Q1, Q2, and Q3 channels at voltage VDDI. Similarly, the portion of pattern 30 that transmits voltage VDDO is coupled to the N- portion of well 22 by a highly conductive shallow N region 34 located in well 22 along surface 14 adjacent to source S4 so as to maintain well 22 and thus the Q4 channel at voltage VDDO. N+ regions 32 and 34 extend to about the same depth as N+ regions D5 and S5. Also, the portion of pattern 30 that carries voltage Vss is coupled to the P-portion of substrate region 16 by a highly conductive shallow P+ region 36 located in region 16 along surface 14 adjacent to source S5 so as to maintain region 16 at voltage VssO P+ region 36 extends to about the same depth as P+ regions S4 and D4. During the operation of level shifter 10, each FET Qi, Q2, or Q3 is conductive with its gate-to-source voltage just at its threshold conductive level VTJ. J mries from 1 to N which is 3 in the present example. Each threshold voltage VTJ is negative inasmuch as FETts Q1-Q3 are P-channel enhancement-mode devices. The source-to-drain voltage drop is VTJ for each FET QJ since it is gate-todrain connected. Voltage VTJ is different for each FET QJ because the source voltage and consequently the channelto-source voltage are different for each FET QJ. Accordingly, output voltage VDDO equals input voltage VDDI plus the composite FET threshold voltage of shifter 10. In other words, EMI9.1 This equation holds even in the complementary case in which each FET QJ is an N-channel device since VTJ is then positive with the necessary result that VDDO exceeds VDDI. Voltage constraints arise from the breakdown voltages of the various PN Junctions. For PN junctions DP and DA which are reverse biased because VDDIZ VDDO > V their well-substrate breakdown voltage VBDW#S is about 50 volts. The breakdown voltage VBDS/D of the PN Junctions along all the source/drain boundaries is about 15 volts since the P+/N- breakdown voltage for the PN junctions of the shallow P+ regions in wells 20 and 22 is about 15 volts, and the N+/P- breakdown voltage for the PN Junctions of shallow N+ regions S5 and D5 is about the same. The greatest reverse PN-Junction voltage difference in the present structure/ circuit is the difference between VDDI and Vss across junction DP. Consequently, VDDI is at least limited to Vss plus VBDw¯s. Within Well 20, the greatest voltage difference is the difference between VDDI and VDDO at the PN Junction 38 along the boundary of drain D3 . VDDI is thus limited to VDDO plus VBDS/D. Devices such as inverter 12 limit voltage VDDO. There is no problem with junction DA because its reverse voltage is always less than that across Junction DP since VDDO < VDDI. A limitation arises from voltage VOUTA which switches from a logical 1 at VDDO with FET Q4 turned on and FET Q5 turned off to a logical "0" at Vss with FET Q4 turned off and FET Q5 turned on as voltage VINA switches from a O (at V55) to a "1" (at VDDd), and vice versa. Aside from junction DA, the greatest PN junction voltage difference in inverter 12 is either the difference between VDDO and Vss (when FET Q4 is turned off) at the PN junction 40 abng drain D4 or the diSErence between VDDO and Vss (when FET Q4 is turned on) at the PN junction 42 along drain D5. Either of these differences is limited to about VBDS/Di whereby VDDI is limited to Vss plus about 2VBDS/D. This is the overall guiding constraint on voltage VDDI here because 2VBDS/D (about 30 volt) is less than VBDW-S (about 50 volts). (about 50 volts). Methods for manufacturing the various elements of the present invention are well known in the semiconductor art. Conventional masking, etching, and cleaning techniques are employed in creating the various doped regions shown in Fig. 1. To simplify the discussion, references to the masking, etching, cleaning, and other such well known steps are omitted from the following fabrication discussion. Boron is utilized as the P-type impurity for creating the various P-type regions. Phosphorus and arsenic are used selectively as the complementary N-type dopants. Other appropriate impurities may be used in place of these dopants. In many of the ion implantation steps, an impurity may be alternatively introduced by diffusion, and vice versa. The starting material is a wafer containing substrate region 16 which has a resistivity of about 15 ohm-cm. A 500-angstrom layer of silicon dioxide is thermally grown along the top of the wafer0 Wells 20 and 22 are created by first selectively ion implanting phosphorus (° ) at a dosage of 5 x 1012 ions/cmê and at an energy of 150 kiloelectron volts (KEV) through the oxide layer into region 16 at the areas intended for wells 20 and 22. The phosphorus is then thermally driven in at l,15O0C to form wells 20 and 22. This also activates the phosphorus. The oxide layer is then removed. Oxide-isolation region 18 and anti-inversion region 24 are then formed according to conventional techniques, boron being selectively implanted at 5 x 1013 ions/cm2 into the field areas of the wafer and then being driven downward to form P+ region 24 as oxide region 18 is formed. The various FET's are now formed by first growing dielectric layer 26 along surface 14 by thermal oxidation, 2 Boron (3+) is selectively implanted at 8 x 1011 ions/cm and 45 KEV into the channels of the various RET's to set their threshold voltages. A polyailicon layer is deposited on the top of layer 26. Phosphorus is diffused into the polysilicon layer to make it electrically conductive at a sheet resistance of about 20 ohms/square. it is then seelectively etched to form gates G1-G5. Using gate G5 to provide self-alignment, arsenic (As+) is implanted at 5 x iso15 ions/cm2 and 120 KEV through oxide layer 26 at the areas intended for the shallow N+ regions. They are then formed by thermally driving in the arsenic at 1 ,0500C. This also activates the arsenic. Using gates G1-G4 to achieve self-alignment, boron (B+) is selectively implanted at 3 x 1015 ions/cm2 and 40 KEV through layer 26 at the areas for the shallow P+ regions. After depositing Vapox layer 28, the wafer is annealed at 950 C. This drives in the boron so as to form the shallow Pe regions, activates it, and repairs lattice damage. Layer 28 and, as appropriate, layer 26 are now selectively etched to form the apertures for the various electrical connections to gates G1-G5 and to the shallow P+/N+ regions along surface 14. Conductive pattern 30 is formed by depositing an appropriate layer of silicon-doped aluminium and selectively etching it. The wafer is then completed by depositing a conventional passivation layer (not shown) on the top of the wafer to provide scratch protection, and forming openings through the passivation layer to expose the external contacts. Preferably, VDDI, VDDO, and Vss are about 21 volts, 18 volts, and 0 volt, respectively, The average threshold voltage for the N serially-connected FET's in shifter 10 is preferably -1.5 volts, whereby N is 2. Although only one level-shifting primary well 20/diode DP has been described in the above structure/circuit, a plurality M of such level-shifting wells/primary diodes could be used in which each level-shifting well contains one or more FET's configured as described above for well 20. The level-shifting wells are then sequentially arranged such that the output voltage from the drain of the last FET in each level-shifting well except the Mth well is the input voltage to the source of the first PET in the next well. The input voltage to the source of the first FET in the first well is the overall input voltage (corresponding to voltage VDDI) to the level shifter. The output voltage from the drain of the last FET in the Mth well is the overall output voltage (corresponding to voltage VDDO) from the level shifter. By appropriate summation, the overall input voltage is constrained in two ways. Firstly, it is limited to the overall output voltage plus MVBDS/D. Secondly, it is constrained to Vss plus either VBDw S or about (M+l)VBDs/D, whichever is less. This extends the input voltage range even further than in the case where there is only one well 20. In an alternative embodiment, the present structure/circuit contains an additional device operated from input voltage VDDI. Fig. 3 shows a circuit diagram of this alternative in which the additional device is another conventional CMOS inverter 44 which consists of a pair of enhancement-mode insulated-gate FET's Q6 and Q7 arranged in an inverting configuration. Their respective drains D6 and D7 are connected together to provide a logical output voltage VOUTB of opposite logical value to a logical input voltage VINB applied to their respective inter connected gate electrodes G6 and G7. FET Q6 is a P-channel device whose source s6 receives voltage VDDI and whose channel is short-circuited to voltage VDDI. The channel and source of FET Q6 are also connected to the cathode of a reverse-biased device PN diode DB whose anode is connected to the Vss supply. FET Q7 is a complementary Nchannel device whose source S7 and channel are both maintained at voltage VssO Except for the fact that inverter 44 operates from voltage VDDl rather than voltage VDDO, inverter 44 is the same as inverter 12. Diode DB is defined by a deep N-well arranged the same as well 22 along surface 14. In verter 44 is fabricated along with and in the same manner as described above for inverter 12 and shifter 10. While providing additional flexibility, inverter 44 further limits the operational range for voltage VDDI. There is no problem with diode DB because its reverse voltage is always the same as that across diode DP. In fact, diode DB and DP are effectively the same PN junction except that they are formed around separate active semiconductor regions. The limitation arises from voltage VOUTB which switches from a "l" at VDDI with FET Q6 turned on and FET Q7 turned off to a Itott at Vss with FET Q6 turned off and FET Q7 turned on as voltage VINB switches from a "o2 to a "1", and vice versa. Aside from diode DB, the greatest PN junction voltage difference in inverter 12 is either the difference between VDDI and Vss (when FET Q6 is turned off) at the PN junction along drain D6 or the difference between VDDI and Vss (when FET Q6 is turned on) at the PN junction along drain D7. Either of these di±- ferences is limited to about VBDS/D' Accordingly, VDDI is limited to Vss plus VBDS/D in this alternative. While the invention has been described with reference to particular embodiments, this description is solely for the purpose of illustration and is not to be construed as limiting the scope of the invention claimed below. For example, semiconductor materials of opposite conductivity type to those described above may be employed to accomplish the same results. An element such as a resistor might be coupled between the drain and gate of one or more of the RET's in the level shifter. Thus, various modifications, changes, and applications may be made by those skilled in the art without departing from the true scope and spirit of the invention as defined by the appended claims,

Claims: 1. An integrated semiconductor structure comprising a semiconductor body and having voltage level shifter with one or more enhancement-mode field effect transistors, each of said field effect transistors having a source, a drain, a channel region extending therebetween and a gate electrode for controlling a main current path of said field effect transistor which connects said source to said drain, said gate electrode being coupled to said drain, a circuit path connecting an input node to an output node and comprising said main current path of each of said one or more field effect transistors, in said circuit path each of said one or more field effect transistors having its source connected nearer to said input node than its drain, said source and drain being of a first conductivity type and being accommodated in a semiconductive substrate region of said semiconductor body, characterized in that said semiconductor substrate region belongs to a reference voltage node of the structure, a diode being connected between said channel region of each of said one or more field effect transistors and said reference voltage node, said semiconductive substrate region being of the first conductivity type and containing a primary well of a second conductivity which is opposite to said first conductivity type, said source and drain of each of said one or more field effect transistors being arranged in said primary well, a pn-junction separating said primary well from said semiconductive substrate region, which pnjunction forms said diode. 2. A structure as in Claim 1 characterized in that the primary well is maintained substantially at the input voltage. 3. A structure as in Claim 1 or 2 characterized in that an output voltage at said output node substantially equals an input voltage at said input node plus the threshold voltage of each of said one or more field effect transistors. 4. A structure as in Claim 1 2 or 3 characterized in that the substrate region contains a first device well of the second conductivity type spaced apart from the primary well the source and drain of a like-polarity field effect transistor lie in the device well and the output node is connected to the source of said field effect transistor. 5. A structure as in Claim 4 characterized in that the device well is maintained substantially at the same voltage as said output node. 6. A structure as in Claim 4 or 5 characterized in that the substrate region contains a second device well of the second conductivity type spaced apart from said primary and first device wells, the source and drain of a like-polarity second field effect transistor lie in the second device well, and the input node is connected to the source of said second field effect transistor. 7. A structure as in Claim 6 characterized in that the second device well is maintained substantially at the same voltage as said input node. 8. A structure as in one or moreof Claims 1 to 7 characterized in that the substrate region contains the source and drain of an opposite-polarity field effect transistor outside the primary well. 9. A structure as in one or more of Claims 1 to 8, characterized in that each of said one or more field effect transistors is an insulated-gate field effect transistor having its source and drain located along a surface of the primary well. 10. A structure as claimed in one or more of Claims 1 to 9, characterized in that the absolute value of the difference between the voltages at the input and reference nodes exceeds the absolute value of the difference between the voltages at the output and reference nodes.

Inventors: SIMMONS, GEORGE HOUSTON
Applicants: N.V. PHILIPS' GLOEILAMPENFABRIEKEN
Application year: 1983
Main classification: H01L27
IPC codes: G05F3, H03K19, H01L21, H01L27, H01L29