PHOTOELECTRIC CONVERSION DEVICE

Abstract: A photoelectric conversion device comprises a plurality of series-connected semiconductor photoelectric elements (U₁,U₂,U₃...) arrayed on a substrate with each element (U₁) comprising a non-single-crystal semiconductor layer (Q₁) sandwiched between first and second electrode layers (E₁,F₁) and the elements being series connected with each other by virtue of a connection (K₁) made between electrically con­ ductive metal oxide layers formed on contiguous portions of respective electrodes (E₁,F₂) of the series-connected ele­ ments. In the manufacture of such a device a first electrode layer on a substrate is divided by laser scribing into a plurality of first electrodes, a semiconductor layer is depo­ sited over the thus-formed array of first electrodes, the semiconductor layer and the underlying first electrodes are divided again by laser scribing to define a separate semicon­ ductor layer associated with each of the plurality of first electrodes and with the scribing cutting through the respec­ tive first electrodes so as in each case to expose an electrode edge portion, a second electrode layer is formed overlying the semiconductor layer and with an electrically conductive metal oxide component contacting the edge portions of the first electrodes, and the second electrode layer is then scribed into separate second electrodes each associated with a respective photoelectric element.

Description: BACKGROUND OF THE INVENTION Field of the Invention The present invention relates to improvements in or relating to a photoelectric conversion device in which a number of semiconductor elements are sequentially arranged on a substrate in side-by-side relation and connected in series. The invention also pertains to a method for the manufacture of such a photoelectric conversion device. Description of the Prior Art There has been proposed in GB-A-2080621 and US-A-4315096 a photoelectric conversion device comprising a plurality of series-connected photoelectric elements U i (i=1,2,...n) each of which comprises a semiconductor layer Q i having formed therein at least one semiconductor junction and first and second electrodes E i , F i which sandwich said semiconductor layer Q i therebetween so that said first electrode E i makes contact with the surface of a first conductivity type portion of the semiconductor layer Q i and said second electrode F i makes contact with the surface of a second conductivity type portion of the semiconductor layer Q i , said second conductivity type being of opposite conductivity to said first conductivity type, and said photoelectric elements U i being series-connected with one another by virtue of one electrode of each element having a portion connected to the other electrode of another element. More particularly, the abovementioned device of GB-A-2080621 and US-A-4315096 comprises a substrate having an insulating surface; and a plurality of semiconductor elements U₁ to U n (n being an integer larger than one) formed thereon in side by side relationship and connected sequentially in series one with another; the semiconductor element U i (i=1, 2,...n) comprising a first electrode E i formed on the substrate, a non-single-crystal semiconductor laminate member Q i formed on the first electrode E i and having formed therein at least one semiconductor junction, and a second electrode F i formed on the non-single-crystal-semiconductor laminate member Q i in opposing relationship to the first electrode E i ; the second electrode F j+1 (j=1,2,...(n-1)) of the semiconductor element U j+1 being coupled with the first electrode E j of the semiconductor element U j through a coupling portion K j formed as an extension of the second electrode F j+1 . With such a semiconductor photoelectric conversion device as is described in GB-A-2080621 and US-A-4315096 abovementioned, electrical loss resulting from the contact resistance between the coupling portion K j and the first electrode E j is an obstacle to enhancement of the photoelectric conversion efficiency. For reducing the electrical loss and thereby raising the photoelectric conversion efficiency, it is necessary that the contact resistance between the coupling portion K j and the electrode E j should be low and should not increase in long-term use of the device. In the abovesaid conventional photoelectric conversion device, however, no consideration is paid to so designing the coupling portion K j and the electrode E j as to prevent the contact resistance therebetween from increasing in long-term use. Accordingly, this prior art device possesses the defect that its photoelectric conversion efficiency will decrease with long-term use. Further, in the photoelectric conversion device mentioned above, the coupling portion K j is shown to be coupled to the upper surface of the first electrode E j . With this arrangement, in order to obtain good contact between the coupling portion K j and the first electrode E j it is necessary that the area of the contact portion in the lateral direction be increased, but this makes it impossible to form the photoelectric conversion device with high density. When the coupling portion K j makes contact with the first electrode E j only at the upper surface thereof, a high density device is obtainable only if the contact area between the coupling portion K j and the first electrode E j is extremely small, and with such a small contact area a sufficiently good contact cannot be obtained. For the abovementioned reasons, the aforementioned prior art photoelectric conversion device cannot achieve low electrical loss with high density. SUMMARY OF THE INVENTION It is therefore an object of the present invention to provide an improved photoelectric conversion device which is free from the aforesaid defects. In accordance with one aspect of the present invention there is provided a photoelectric conversion device comprising an insulating substrate and a plurality of adjacent series-connected photoelectric elements U i (i=1,2,...n) each of which comprises a silicon based non-single crystal semiconductor layer Q i having formed therein at least one semiconductor junction and first and second electrodes E i , F i which sandwich said semiconductor layer Q i therebetween so that said first electrode E i makes contact with the surface of a first conductivity type portion of the semiconductor layer Q i and said second electrode F i makes contact with the surface of a second conductivity type portion of the semiconductor layer Q i , said second conductivity type being of opposite conductivity to said first conductivity type, and said photoelectric elements U i being series-connected with one another by virtue of one electrode F j+1 (j=1,2...(n-1)) of each element U j+1 having an integrally formed coupling portion K j in contact with the other electrode E j of another element U j , as is known from GB-A-2080621 and US-A-4315096 abovementioned, which is characterized in accordance with the invention in that said first and second electrodes E i , F i comprise electrically-conductive metal oxide layers contacting the respective surfaces of the semiconductor layer Q i , and the metal oxide layer contacting the P-type surface of the semiconductor layer is tin oxide or a metal oxide consisting principally of tin oxide, and the metal oxide layer contacting the N-type surface of the semiconductor layer is indium oxide or a metal oxide consisting principally of indium oxide. More particularly, the present invention provides a photoelectric conversion device wherein the semiconductor element U i (i=1, 2,...n) comprises a non-single-crystal semiconductor laminate member Q i formed on the first electrode E i and having formed therein at least one semiconductor junction, and the second electrode F i is formed on the non-single-crystal-semiconductor laminate member Q i in opposing relationship to the first electrode E i ; the coupling portion K j is formed as an extension of the second electrode F j+1 ; the second electrode F i and the coupling portion K j comprise an electrically conductive metal oxide substantially different to the electrically conductive metal oxide of the first electrode E j . Since the first and second electrode layers E i and F i contacting the non-single-crystal semiconductor laminate member Q i are both formed of metal oxide, therefore, even if the device were to be used for a long time, no such reaction as might lead to an increase in the contact resistance between the electrodes would in practice occur. Consequently, the contact resistance between the coupling portion K j and the first electrode E j will not increase during long-term use of the device and correspondingly electrical loss in the device will not be increased by long-term use. Additionally, by forming the metal oxide electrodes of different metal oxides selected to provide compatibility with the different conductivity type regions of the semiconductor a device having increased long-term reliability is obtained. By virtue of the invention, therefore, a photoelectric conversion device is provided which maintains its high photoelectric conversion efficiency for a long period of time. In accordance with a subordinate feature of the present invention, a groove 0 j is formed in the non-single-crystal semiconductor laminate member Q j so as to extend between the second electrode F j+1 and the first electrode E j , and the coupling portion K j extends into the groove 0 j to make contact with the first electrode E j where it is exposed by the groove 0 j . The groove 0 j can extend into the thickness of the first electrode E j and can even extend through the first electrode E j and into the substrate and by this means the contact area between the first electrode E j and the second electrode F j+1 can be increased without any increase in the lateral direction whereby a high density photoelectric conversion device which exhibits low electrical loss and hence is high in photoelectric conversion efficiency can be obtained. As will be described hereinafter, the photoelectric conversion device of the present invention can be formed by a process including the following steps (a) to (d): (a) a first conductive metal oxide layer which will ultimately serve as a first electrode of each photoelectric element, is formed on an insulating substrate and is subjected to first scanning by a laser beam, thereby providing the first electrode of each photoelectric element; (b) a non-single-crystal silicon based semiconductor laminate member, which will ultimately serve as the non-single-crystal semiconductor laminate member of each photoelectric element and has formed therein at least one semiconductor junction, is formed on the substrate in such a manner as to cover the first electrode of each photoelectric element; (c) the non-single-crystal semiconductor laminate member is subjected to second scanning by a laser beam thereby cutting therein grooves which expose the first electrodes and divide the semiconductor into a plurality of discrete elements, one for each photoelectric element; (d) a second conductive metal oxide layer which will ultimately serve as a second electrode of each photoelectric element, is formed over the divided non-single-crystal semiconductor laminate members and into the grooves, and then the second conductive layer is subjected to third scanning by a laser beam, thereby providing the second electrode of each photoelectric element. According to the manufacturing method including the abovesaid steps, and by virtue of forming the electrodes of the plural photoelectric elements of specific metal oxides which will not deteriorate with long-term use and moreover of using different metal oxides to contact different conductivity type regions of the semiconductor layer for enhanced compatibility therewith, the coupling portion of the second electrode of each photoelectric element, formed by an extension of the second electrode itself, will be connected with the first electrode of the immediately preceding photoelectric element through an excellent electrical coupling providing stable long-term characteristics and leading to a photoelectric conversion device of high photoelectric conversion efficiency. Therefore, in accordance with another aspect of the present invention there is provided a method of manufacturing a photoelectric conversion device comprising forming a plurality of spaced apart first electrodes (E i ) on an insulating substrate, forming a silicon based non-single crystal semiconductor layer having a first conductivity type portion overlying all of the spaced-apart first electrodes (E i ), said semiconductor layer having formed therein at least one semiconductor junction and having a second, opposite conductivity type portion remote from said first conductivity type portion, dividing said semiconductor layer so as to define a plurality of separate semiconductor layers (Q i ) each associated with a respective one of said plurality of first electrodes (E i ) and so as to expose a portion of each of the respective first electrodes, forming a second electrode layer overlying the second conductivity type portions of all of the separate semiconductor layers (Q i ) and contacting the exposed portions of the first electrodes (E i ), and dividing the second electrode layer so as to define a plurality of separate second electrodes (F i ) each associated with a respective first electrode (E i ) and a respective one of the separate semiconductor layers (Q i ) so as to constitute therewith a photoelectric element (U i ), each photoelectric element being series connected to adjacent like photoelectric elements by providing one electrode (F j+1 ) of each element (U j+1 ) with an integrally formed coupling portion K j in contact with the other electrode E j of another element, as known from GB-A-2080621 aforementioned, and which is characterized in accordance with the present invention in that the first and second electrode layers are formed as electrically-conductive metal oxide layers, and the metal oxide layer contacting the P-type surface of the semiconductor layer is tin oxide or a metal oxide consisting principally of tin oxide, and the metal oxide layer contacting the N-type surface of the semiconductor layer is indium oxide or a metal oxide consisting principally of indium oxide. During the prosecution of this application, the Applicants attention has been drawn by the European Patent Office to W0-A-8300409 which was published on 3 February 1983, namely after the earliest claimed priority date (24 November 1982) of the present application, but does itself claim the earlier priority date of 16 July 1981. The disclosure of W0-A-8300409 if entitled to its claimed priority date is thus to be considered as comprised in the state of the art in accordance with Article 54(3) EPC in respect of the subject matter of the first and second Japanese patent applications from which the present application claims priority, and as comprised in the state of the art in accordance with Article 54(2) EPC in respect of the subject matter of the remaining three Japanese applications from which the present application claims priority. Disclosed in W0-A-8300409 are solar cells and arrays of solar cells made as thin films on insulating substrates. In a first embodiment configured as an individual photoelectric conversion device, by use of masking techniques a thin conductive film is deposited on a glass substrate, a semiconductor film incorporating a P-N junction is deposited on top of the conductive film, a second conductive film is deposited on top of the semiconductor film, and contacts are made to edges of the conductive films. In a second embodiment, an array of such cells is made by shifting the mask between successive deposition steps so that an edge of the second conductive film of one cell overlaps an edge of the first conductive film of an adjacent cell for connecting the cells in series. Mention is made in W0-A-8300409 of forming one or other of the conductive films as discrete films of ITO (indium-tin oxide) and gold, but there is no disclosure in W0-A-8300409 of a photoelectric conversion device or a method of making the same in accordance with the present invention and as claimed in the appended claims. A further photoelectric conversion device is disclosed in GB-A-2095908. Other features of the present invention are set forth in the appended claims and will become more fully apparent from consideration of the following detailed description taken in conjunction with the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS Fig.1 is a plan view schematically illustrating an embodiment of the present invention; Fig.2 is a schematic sectional view taken on the line II-II in Fig.1; Figs.3A to D are detailed cross-sectional views showing on an enlarged scale parts of the embodiment of the present invention shown in Fig.2; Figs. 4A and B are detailed sectional views showing on an enlarged scale other parts of the embodiment of Fig.1; Figs. 5A to G are cross-sectional views schematically showing some of the sequential steps involved in the manufacture of the photoelectric conversion device of the embodiment of the present invention depicted in Figs. 1 to 4; Figs. 6A to D, 7A to D and 8 are schematic cross-sectional views, similar to Fig. 3, illustrating other embodiments of the present invention, respectively; Fig. 9 is a plan view schematically illustrating another embodiment of the present invention; Fig. 10 is a schematic cross-sectional view taken on the line X-X in Fig. 9; Fig. 11 is an enlarged cross-sectional view showing a part of the photoelectric conversion device of the present invention illustrated in Figs. 9 and 10; and Fig. 12 is a schematic cross-sectional view showing some of the sequential steps involved in the manufacture of the photoelectric conversion device depicted in Fig. 9 and 10. DESCRIPTION OF THE PREFERRED EMBODIMENTS A description will be given first, with reference to Figs. 1 to 3, of an embodiment of the present invention. The embodiment of the photoelectric conversion device of the present invention shown in Figs. 1 to 3 has a plurality n (n being an integer larger than one) of photo semiconductor elements U₁ to U n formed side by side on a substrate 1. The substrate 1 has an insulating surface 2. The substrate 1 may be a light-transparent substrate made of glass, organic synthetic resin or the like, or a flexible sheet as of organic synthetic resin. It is also possible to employ a non-light-transparent substrate of ceramics, organic resin or the like, a non-light-transparent metal substrate having its surface insulated, or a flexible, insulating sheet-like member having an insulating film formed on the surface of a flexible metallic sheet. The substrate 1 is, for example, rectangular in shape and 20 cm wide and 60 cm long. In the case of the substrate 1 being the abovesaid flexible metallic sheet-like member, it is made, for instance, of aluminum or an aluminum-base alloy and has a thickness of, for example, 10 to 200 µm, preferably, 50 to 150 µm. The insulating film formed on the surface of the flexible metallic sheet-like member is, for example, an oxide film resulting from oxidation of the surface of the sheet-like member. When the flexible metallic sheet-like member is made of aluminum or an aluminum-base alloy, the abovesaid oxide film is an aluminum oxide (alumina Al₂O₃) or an insulating material consisting principally of the aluminum oxide. The oxide film has a thickness small enough not to impair the flexibility of the flexible metallic sheet-like member, for instance, in the range of 0.1 to 2 µm, preferably, 0.3 to 1 µm. Such an oxide film can be formed by calorizing the flexible metallic sheet-like member made of aluminum or the aluminum-base alloy. The photo semiconductor element U i (i=1, 2, ....n) on the substrate 1 has an electrode E i formed on the substrate 1, a non-single-crystal semiconductor laminate member Q i formed on the electrode E i and an electrode F i formed on the non-single-crystal semiconductor laminate member Q i in opposing relation to the electrode E i . The electrode E i is, for example, rectangular in shape and has a width of 5 to 40 mm, preferably 15 mm and a length slightly smaller than the length of the substrate 1. Electrodes E j (j=1, 2, ...(n-1)) and E j+1 are spaced apart by a groove G j which is shown to extend in the vertical direction in Fig. 1. The groove G j is, for example, 40 µm wide. The electrode E i may be a single-layer structure as shown in Fig. 3A. The electrode E i may also be a two-layer structure which comprises a layer 4 making contact with the substrate 1 and a layer 5 formed on the layer 4 in contact with the non-single-crystal semiconductor laminate member Q i as shown in Figs. 3C and D. Also it is possible to employ a three-layer structure having another layer sandwiched between the layers 4 and 5 though not shown. The electrode E i may be a reflective electrode when the electrode F i is light-transparent. When the electrode E i is the reflective electrode, light incident on the non-single-crystal semiconductor laminate member Q i on the opposite side from the substrate 1 passes through the non-single-crystal semiconductor laminate member Q i , then is reflected by the surface of the electrode E i back to the non-single-crystal semiconductor laminate member Q i to pass therethrough. The larger the optical path length of the reflected light in the non-single-crystal semiconductor laminate member Q i is, the more the utilization efficiency of light is raised. From this point of view, it is preferable that the surface of the electrode E i on the side of the non-single-crystal semiconductor laminate member Q i have irregularities oblique to planes perpendicular to the substrate surface to form a diffuse reflection surface 6 at the boundary between it and the non-single-crystal semiconductor laminate member Q i . In the case where the electrode E i is a reflective electrode and has the two-layer structure comprised of the layers 4 and 5, in order to simultaneously satisfy the requirements that the electrode E i be of high conductivity and high reflectivity and to prevent that when the non-single-crystal semiconductor laminate member Q i is formed, the material of its non-single-crystal semiconductor layer on the side of the electrode E i or an impurity contained therein reacts with the material of the reflective electrode to form a layer of high contact resistance in the interface between the electrode E i and the non-single-crystal semiconductor layer Q i , it is preferable that the layer 4 be a reflective conductive layer and the layer 5 a light trans-parent metal oxide layer 5. In the case where the layer 4 of the electrode E i is the reflective conductive layer, it may preferably be made of metal. The metal may be stainless steel but, in view of the requirements of high conductivity and high reflectivity for the electrode E i , it is preferable to employ aluminum (Al), silver (Ag), an aluminum-base alloy containing, for example, 0.1 to 2 volume% of silicon, or a silver-base alloy. When the layer 5 of the electrode E i is a light-transparent metal oxide layer, in order to ensure that the layer 5 be high in conductivity and in transmittance and to prevent that when the non-single-crystal semiconductor laminate layer Q i is formed, the metallic oxide reacts with the material or impurity of the non-single-crystal semiconductor layer of the laminate member Q i on the side of the electrode E i to form the abovesaid high contact resistance layer, the layer 5 is formed of a tin oxide (Sn0₂ or Sn0) or a metallic oxide consisting principally of such a tin oxide, for instance, a tin oxide containing halogen or, 1 to 10 wt% of antimony oxide in the event that the non-single-crystal semiconductor layer of the non-single-crystal semiconductor laminate member Q i on the side of the electrode E i is p-type. In the case where the layer of the non-single-crystal semiconductor laminate member Q i on the side of the electrode E i is N-type, an indium oxide or a metallic oxide consisting principally thereof, for instance an indium oxide containing l to l0 wt% of tin oxide, is used. In this case, the light transparent conductive layer 5 is 300 to 600 A thick. In the case where the electrode E i is such a two-layer reflective electrode comprising the layer 4 and the layer 5, when the abovesaid diffuse reflection surface 6 is formed at the boundary between the electrode E i and the non-single-crystal semiconductor laminate member Q i , it is formed on the surface of the layer 5 on the side of the laminate member Q i . In the case where the electrode E i is comprised of the layers 4 and 5 these layers are a reflective conductive layer and a light-transparent conductive layer to form a reflective electrode, the surface of the layer 4 may also be formed as the diffuse reflection surface in the interface between it and the light-transparent conductive layer 5, through not shown. When the substrate 1 is light-transparent, the electrode E i is formed as a light-transparent electrode. In such a case, the light-transparent electrode may be a single metal oxide layer. Where the electrode E i is a single-layer light-transparent electrode, when the non-single-crystal semiconductor layer of the non-single-crystal laminate member Q i on the side of the electrode E i is P-type, the electrode E i is formed of a tin oxide or a metal oxide consisting principally thereof for the same reasons as given previously. When the abovesaid non-single-crystal semiconductor layer is N-type, the electrode E i is a metal oxide layer formed of indium oxide or a metal oxide consisting principally thereof. In the case where the electrode E i has the two-layer structure comprised of the layers 4 and 5 and is light-transparent, if the non-single-crystal semiconductor layer of the non-single-crystal semiconductor laminate member Q i on the side of the electrode E i is P-type, it is preferable that the layer 5 be a metal oxide layer formed of a tin oxide or consisting principally thereof and the layer 4 a metal oxide layer formed of an indium oxide or consisting principally thereof. When the electrode F i is light-transparent, the electrode E i need not always be reflective. In the semiconductor element U i formed on the substrate 1, the non-single-crystal semiconductor laminate member Q j+1 (j=1, 2,...(n-1)) on the aforesaid electrode E j+1 extends laterally from the marginal edge of the electrode E j+1 on the opposite side from the electrode E j to a position on the electrode E j on the side of the electrode E j+1 across the groove G j separating the electrode E j and E j+1 making contact with the non-single-crystal semiconductor laminate member Q j . The non-single-crystal semiconductor laminate member Q₁ formed on the electrode E₁ extends laterally onto the substrate 1 to cover the side surface of the electrode E₁ on the opposite side from the electrode E₂. Further, laminate member Q n is formed as a non-single-crystal-semiconductor laminate member Q₀ to laterally extend onto the substrate 1 to cover the side surface of the electrode E n on the opposite side from the electrode E n-1 . The non-single-crystal semiconductor laminate member Q i is formed to vertically extend to cover the electrode E i . The non-single-crystal semiconductor laminate member Q i has cut therein a groove O i which is shown to extend in the vertical direction in Fig. 1. The grooves O₁ to O n are formed simultaneously. The non-single-crystal semiconductor laminate member Q i formed on the electrode E i may be formed by one or more two-layer structures each composed of a P-type or N-type non-single-crystal semiconductor layer and another non-single-crystal semiconductor layer of the opposite conductivity type. Accordingly, the non-single-crystal semiconductor laminate member Q i can be formed to have at least one PN junction. Furthermore, the non-single-crystal semiconductor laminate member Q i may preferably be formed by one or more three-layer structures, each composed of a P-type or N-type non-single-crystal semiconductor layer 8, an I-type non-single-crystal semiconductor layer 9 and a non-single-crystal semiconductor layer 10 opposite in conductivity type to the layer 8 as shown in Fig. 3. Accordingly, the non-single-crystal semiconductor laminate member Q i may preferably be formed to have at least one PIN junction. As regards the energy gaps of the layers 8, 9 and 10 there are various possibilities. If the substrate and the first electrode E i are light transparent then the layer 8 can for example have a wider energy gap than do the layers 9 and 10, or the layers 8 and 10 can have a wider energy gap than does the layer 9. If the second electrode F i is light transparent, then the layer 10 can for example have a wider energy gap than do the layers 8 and 9, or the layers 8 and 10 can have a wider energy gap than does the layer 9. The non-single-crystal semiconductor layer of the non-single-crystal semiconductor laminate member Q i on the side of the electrode E i is P-type when the layer of the electrode E i making contact with the non-single-crystal semiconductor laminate member Q i is formed by a tin oxide or metallic oxide consisting principally of the tin oxide as described previously in respect of Fig. 3. When the layer 5 of the electrode E i making contact with the non-single-crystal semiconductor laminate member Q i is formed by an indium oxide or metallic oxide consisting principally of the indium oxide, the non-single-crystal semiconductor layer of the non-single-crystal semiconductor laminate member Q i on the side of the electrode E i is N-type. Accordingly, in the case where the non-single-crystal semiconductor laminate member Q i has the three-layer structure comprising the non-single-crystal semiconductor layers 8, 9 and 10 as illustrated in Fig. 3 and the layer of the electrode E i semiconductor laminate member Q i is formed by the tin oxide or metallic oxide consisting principally of the tin oxide, the non-single-crystal semiconductor layers 8 and 10 are P-type and N-type, respectively. When the light transparent conductive layer 5 is formed by the indium oxide or metal oxide consisting principally of indium oxide, the non-single-crystal semiconductor layers 8 and 10 are N-type and P-type, respectively. The non-single-crystal semiconductor layers making up the non-single-crystal semiconductor laminate member Q i are formed of silicon or a semiconductor consisting principally of silicon. When the non-single-crystal semiconductor laminate member Q i has the three-layer structure composed of the non-single-crystal semicodnuctor layers 8, 9 and 10, the non-single-crystal semicodncutor layer 8 may be formed, for instance, of silicon to a thickness of 5 to 300 A, preferably 70 to 130 A. Where the non-single-crystal semiconductor layer 8 is P-type, for example, boron (B) may be introduced thereinto as a P-type impurity. The non-single-crystal semiconductor layer 9 can be formed of silicon as is the case with the non-single-crystal semiconductor layer 8 but its thickness may preferably be larger than that of the layer 8, for instance, 0.4 to 0.7µm. The non-single-crystal semiconductor layer 9 contains a very small amount of a P-type impurity or does not substantially contain either of P-type or N-type impurities and, if any, their concentrations are negligibly low. The non-single-crystal semiconductor layer 10 can also be formed of silicon as is the case with the non-single-crystal semiconductor layer 8. But since the non-single-crystal semiconductor layer 10 is disposed on the side where the light to be converted is incident on the semiconductor element, it may preferably be formed of a semiconductor which has a larger energy band gap than does the semiconductor material of the non-single-crystal semiconductor layer 8, such as, for example, silicon carbide expressed by Si x C 1-x (0<x<1). In this case, the non-single-crystal semiconductor layer 10 can be formed to a thickness of 5 to 300 Å, (10 Å ≡ 1nm) typically, in the range of 7 to 130 Å. Other materials which could be used for the layer 10 might for example be Si x Ge 1-x (0<x<1) or Si₃N 4-x (0<x<4). Incidentally, the aforesaid non-single-crystal semiconductor laminate member Q o has the same structure as the aforementioned one Q i . In the semiconductor element U i formed on the substrate 1, the electrode F i on the non-single-crystal semiconductor laminate member Q i is disposed opposite to the electrode E i formed on the non-single-crystal semiconductor laminate member Q i . In this case, the electrode F j+1 extends from a position apart from the isolated end portion of the non-single-crystal semiconductor laminate member Q j+1 on the opposite side from the non-single-crystal semiconductor laminate member Q j onto its isolated end portion on the side of the non-single-crystal semiconductor laminate member Q j+1 . The electrode F i extends from a position away from the isolated end portion of the non-single-crystal laminate member Q₁ on the side of the non-single-crystal semiconductor laminate member Q₂ to the marginal edge of the substrate 1 to cover the extension of the non-single-crystal laminate member Q₁ on the side surface of the electrode E₁. On the non-single-crystal semiconductor laminate member Q n , an electrode F₀ Similar to the electrode F n is formed to extend from the isolated end portion on the side of the non-single-crystal semiconductor laminate member Q₀ to the marginal edge of the substrate 1 to cover the side surface of the non-single-crystal semiconductor laminate member Q₀. The electrodes F j and F j+1 are isolated by an isolating portion H j . The electrodes F j+1 and F₀ are also isolated by an isolating portion H n . The isolating portions H i may be simultaneously formed as grooves as is the case with the grooves G i . The electrode F i may be formed as a single layer as shown in Fig. 3 and may also be of the two-layer structure comprised of a layer 21 making contact with the non-single-crystal semiconductor laminate member Q i and a layer 22 formed on the layer 21 as illustrated in Figs. 3B to D and 7. Also it is possible to employ such a three-layer structure as depicted in Fig. 8 which comprises the layers 21 and 22 and another layer 23 formed on the layer 2. The electrode F i may be transparent. When the electrode F i is a transparent single layer, it is formed of a metallic oxide. In this case, it is required that the metal oxide be high in conductivity and in transmittance and, when forming the electrode F i , would not react with the material or impurity of the non-single-crystal semiconductor layer of the non-single-crystal semiconductor laminate member Q i on the side of the electrode F i to form a layer which increases the contact resistance between the non-single-crystal semiconductor laminate member Q i and the electrode F i or a layer of low transmittance. To meet such requirements, when the non-single-crystal layer of the non-single-crystal semiconductor laminate member Q i on the side of the electrode F i is N-type, the electrode F i is formed of an indium oxide or metallic oxide consisting principally of the indium oxide, such as, for example, an indium oxide contaning 1 to 10 wt% of tin oxide. When the non-single-crystal layer of the non-single-crystal semiconductor to laminate layer Q i on the side of the electrode F i is P-type, the electrode F i is formed of a tin oxide or metallic oxide consisting principally of the tin oxide. The electrode F i can be formed, for instance, 300 to 600 Å thick. In the case where the electrode F i is transparent and has the two-layer structure composed of the layers 21 and 22, the layer 21 making contact with the non-single-crystal semiconductor laminate member Q i may preferably be a layer formed of the tin oxide or consisting principally thereof, or a layer formed of the indium oxide or consisting principally thereof as described previously depending on whether the non-single-crystal semiconductor layer of the non-single-crystal semiconductor laminate member Q i is P-type or N-type. In this case, it is preferable that when the layer 21 is the layer formed of the tin oxide or consisting principally thereof, the layer 22 be the layer formed of the indium oxide or consisting principally thereof and, when the layer 21 is the layer formed of the indium oxide or consisting principally thereof, the layer 22 be the layer formed the tin oxide or consisting principally thereof. The electrode F i may be a reflective one when the substrate 1 and the electrode E i are light-transparent. When the electrode F i is the reflective electrode, it is possible to employ the two-layer structure comprising the layers 21 and 22, the three-layer structure comprising the layers 21, 22 and 23 or further multi-layer structure in addition to the single-layer structure as described previously. Where the electrode F i is the two-layer structure made up of the layers 21 and 22, it is preferred that depending on whether the non-single-crystal semiconductor layer of the non-single-crystal semiconductor laminate member Q i contacting the layer 21 is P-type or N-type, the layer 21 be the layer formed of the tin oxide or consisting principally thereof or the layer formed of the indium oxide or consisting principally thereof and the layer 22 be a reflective conductive layer as of silver or aluminum, as described previously. When the electrode F i has the three-layer structure composed of the layers 21, 22 and 23, it is preferable that the layers 21 and 22 be such layers as mentioned above and the layer 23 a nickel layer. The electrode F i need not always be reflective even if the substrate 1 and the electrode E i are light-transparent. In such a case, if the electrode has the two-layer structure comprised of the layers 21 and 22, it is preferred that the layer 21 be such a layer as mentioned above and the layer 22 a sublimable conductive layer formed of chromium or consisting principally thereof. The electrode F₀ formed to extend on the non-single-crystal semiconductor laminate member Q₀ has the same structure as the abovesaid electrode F i . The electrode F j+1 of the semiconductor element U j+1 (j=1, 2, ...(n-1)) is coupled with the electrode E j of the semoconductor element U j through a coupling portion K j . The coupling portion K j extends from the position where the electrode F j+1 is opposite to the electrode E j to the region of the electrode E j opposite to the electrode F j+1 , passing through a groove O j by which the non-single-crystal semiconductor laminate members Q j and Q j+1 are separated. Such a coupling portion K j is formed by an extension of the electrode F j+1 formed simultaneously with the electrode F j+1 . The electrode F₁ of the semiconductor element U₁ extends down to the surface of the substrate 1 as referred to previously and the extension constitutes an external connection terminal 11. The electrode F₀ extending on the non-single-crystal semiconductor laminate member Q₀ is coupled with the electrode E n of the semiconductor element U n through a coupling portion K n . In this case, the coupling portion K n extends from the position where the electrode F₀ is opposite to the electrode E n to the region of the electrode E n opposite to the electrode F₀, passing through a groove O n . Such a coupling portion K n is an extension of the electrode F₀ formed simultaneously therewith. The electrode F₀ extends on the side surface of the non-single-crystal semiconductor laminate member Q₀ in the direction reverse from the electrode F n to the marginal edge of the substrate 1, and the extending end portion forms a terminal 12 for external connection. The isolated portion H j is formed to extend in the vertical direction in Fig. 1 to go down into the non-single-crystal semiconductor laminate member Q j to form therein a region 13 underlying the electrode E j+1 . The groove O j also extends across that portion of the electrode E j adjacent to the electrode E j+1 in the thickwise direction. Accordingly, the electrode E j has an isolated portion 14 on the side of the electrode E j+1 . The isolated portion H n is formed to extend in the vertical direction in Fig. 1 to go down into the non-single-crystal semiconductor laminate member Q n to form therein the region 13 underlying the electrode F₀. The groove O n extends across that portion of the electrode E n opposite side from the electrode F₀ in the thickwise direction. Accordingly, the electrode E n has the isolated region 14 on the opposite side from the electrode E n-1 . On the substrate 1 is formed a transparent antireflection and protective film 15 to cover the aforesaid semiconductors U₁ to U n . In this case, however, the antireflection and protective film 15 does not extend on the extended portions of the electrodes F₁ and F0 forming the aforementioned external connection terminals 11 and 12, respectively. The foregoing is a description of the arrangement of an embodiment of the photoelectric conversion device according to the present invention. Next, a description will be given, with reference to Figs. 5A to G, of an embodiment of the photoelectric conversion device manufacturing method of the present invention. In Figs. 5A to G, parts corresponding to those in Figs. 1 and 2 are identified by the same reference numerals and characters and no detailed description thereof will be repeated. The manufacturing method of the photoelectric conversion device shown in Figs. 5A to G is as follows: The manufacture starts with the preparation of such a substrate 1 as described previously in respect of Figs. 1 and 2. Then, as shown in Fig. 5B, the conductive layer 41 which will ultimately form the electrodes E₁ to E n described previously in connection with Figs. 1 and 2 is formed by a known method on the substrate 1. In the case where the electrodes E₁ to E n are each formed to have the two-layer structure composed of the two layers 4 and 5 as described previously with regard to Fig. 3, the conductive layer 41 is made up of a layer which will ultimately serve as the layer 4 and another layer which ultimately serve as the layer 5, though neither shown nor described in detail. The former layer is first formed on the substrate 1 by a known method, for example, vapor deposition and then the latter layer is similarly formed thereon by a known method, for instance, vapor deposition. Next, the conductive layer 41 is scanned by a laser beam (not shown) having a diameter of 30 to 70 µm, typically, 40 µm, by which the aforementioned (n-1) grooves G i to G n-1 are cut in the conductive layer 41 to form n electrodes E₁ to E n which are separated from adjacent ones of them by the grooves G₁ to G n-1 , as shown in Fig. 5C. For this scanning, it is possible to employ a laser beam of a 1.06 µm wavelength from a YAG laser and a laser beam of a 0.488 or 0.512 µm wavelength from an argon laser. The abovesaid laser beam scanning can be carried out in the air but may also be performed in the atmosphere of a gas which reacts with the conductive material of the layer 41 at high temperatures to spatter it from the substrate surface. In this case, the gas used may be hydrogen fluride (HF), hydrogen chloride (HCl) or Freon gas (CF₄, CHF₃, CClF₃ and like gases). In the case where the laser beam scanning takes place in the air, burrs are likely to form on the upper marginal edges of the groove G j . Accordingly, it is desirable that the laser beam scanning be followed by deburring through the use of the abovesaid gas or etching with an etchant such as hydrofluoric acid (HF), hydrochloric acid (HCl) or Freon liquids C₂F₃Cl₄C₂F₃Cl₃ and similar liquids. Moreover, it is possible to accomplish the laser beam scanning of the conductive layer 41 easily and accurately by the aid of a computer while monitoring through a video camera device. Next, a non-single-crystal semiconductor layer formed by a known method, for example, low-pressure CVD on the substrate 1 to fill the grooves G₁ to G n-1 and to cover the electrode E₁ to E n as shown in Fig. 5D so that the regions of the layer 42 on the electrodes E₁ to E n may be the non-single-crystal semiconductor laminate members Q₁ to Q n described previously in respect of Figs. 1 and 2. Where the non-single-crystal semiconductor laminate members Q₁ to Q n are each formed as the three-layer structure consisting of the non-single-crystal semiconductor layers 8, 9 and 10 as described previously with regard to Fig. 3, non-single crystal semiconductor layers which will ultimately be used as the non-single-crystal layers 8, 9 and 10 respectively, are formed in this order through the use of a known method, for instance, the low-pressure CVD method, thereby providing the non-single-crystal semiconductor laminate member 42. After this, the non-single-crystal semiconductor laminate members Q₁ to Q n are selectively removed by laser beam scanning to cut therein the aforementioned n grooves O₁ to O n as shown in Fig. 5E. In this case, the groove O i (i=1, 2, ...n) can be formed to extend down to the insulating film 2 of the substrate 1 across the electrode E i as illustrated. In such a case, the region 14 of the electrode E i is isolated from the other regions. The laser beam scanning of the non-single-crystal semicondcutor laminate members Q₁ to Q n can take place in the air as is the case with the conductive layer 41. It is also possible to carry out the laser beam scanning in the atmosphere of a gas which reacts with the materials of the non-single-crystal semiconductor laminate member 42 and the electrodes E₁ to E n at high temperatures to spatter them from the substrate surface. Also in this case, the gas used is hydrogen fluoride, hydrogen chloride or Freon gas. In the case where the laser beam scanning of the non-single-crystal semiconductor laminate members Q₁ to Q n is carried out in the air, it is desirable that the laser beam scanning be followed by deburring through the use of the aforesaid gas or etching with such etchants as mentioned previously. The abovesaid laser beam scanning can also be performed easily and accurately by the aid of a computer while monitoring through the video camera device. The groove O j (j=1, 2, ...(n-1)) is formed at a position spaced a predetermined distance apart from the groove G j laterally thereof (on the left thereof in Fig. 5). The abovesaid predetermined distance is large as compared with the thickness of the non-single-crystal semiconductor laminate member 42. It is preferable, however, to minimize this distance. By the aid of a computer the groove O j can be provided in close proximity to the groove G j with high accuracy. This permits reduction of the area of the substrate 1 occupied by the region 14 of the electrode E j . It is desirable that the groove O n be formed closely to the marginal edge of the electrode E n on the opposite side from the electrode E n-1 so that the region 14 of the electrode E n may occupy less area of the substrate. Next, a conductive layer 43, which will ultimately form the electrodes F₁ to F n and F₀ referred to in respect to Figs. 1 and 2, is formed, for example by vapor deposition,on the substrate 1 to cover the non-single-crystal semiconductor laminate members Q₁ to Q n and to fill the grooves O₁ to O n , forming coupling portions K₁ to K n . In this case, the conductive layer 43 is formed to extend on the substrate 1 except both marginal portions in its lengthwise direction but it covers both marginal portions of the substrate 1 in its widthwise direction. Next, the conductive layer 43 is selectively removed by laser beam scanning as is the case with the non-single-crystal semiconductor laminate members Q₁ to Q n . By this laser beam scanning there are formed in the conductive layer 43 n isolating portions H₁ to H n , n electrodes F₁ to F n isolated by the isolating portions H₁ to H n-1 , respectively, and opposite to the electrodes E₁ to E n across the non-single-crystal semicondcutor laminate members Q₁ to Q n , respectively, and an elctrode F₀ isolated by the isolating portion H n from the electrode F n and opposite to electrode E n . In this case, the laser beam scanning is carried out so that the electrode F j+1 may be linked with the electrode E j through the coupling portion K j and so that the electrode F₀ may be linked with the electrode E n through the coupling portion K n . By the abovesaid laser beam scanning, the isolating portion H i (i= 1, 2, ...n) can be formed to extend into the non-single-crystal semiconductor laminate member Q i . As is the case with the conductive layer 41, the laser beam scanning of the conductive layer 43 can be effected in the air and may also be carried out in the atmosphere of a gas which reacts with the materials of the conductive layer 43 and the non-single-crystal semiconductor laminate members Q₁ to Q n at high temperatures to spatter them from the substrate surface. The gas used in this case may be hydrogen fluoride, hydrogen chloride or Freon gas. Also in the case of performing the laser beam scanning of the conductive layer 43 in the air, it is desirable that the laser beam scanning be followed by deburring through the use of the aforesaid gas or etching using the aforesaid liquid as the etchant. By the laser beam scanning for the conductive layer 43, the isolating portion H i can be provided in the form of a groove as illustrated. The laser beam scanning of the conductive layer 43 can also be carried out easily and accurately by the aid of a computer while monitoring through the video camera device. Further, the isolating portion H i is formed a predetermined distance apart from the groove O i laterally thereof (on the left thereof in the drawing). The abovesaid predetermined distance is large as compared with the thickness of the non-single-crystal semiconductor laminate member 43, but it may preferably be selected as small as possible. By the aid of a computer the isolating portion H i can be formed in close proximity to the groove O i with high precision. This allows reduction of the area of the substrate 1 occupied by the region 13 formed in the non-single-crystal semiconductor laminate member Q i . Next, a transparent antireflection and protective film 15 is formed by a known method on the substrate to cover the electrodes F₁ to F n and F₀ and the isolating portion H₁ as shown in Fig. 5G. In the manner described above, the photoelectric conversion device of the present invention, shown in Figs. 1 and 2, is manufactured. The above is a description of an embodiment of the present invention and an example of its manufacturing method. According to the photoelectric conversion device of Figs. 1 and 2, when light (not shown) is incident thereon from the side of the substrate 1 or the electrodes F₁ to F n each semiconductor elements U i (i=1, 2, ...n) carries out photoelectric conversion to generate photovoltage across its electrodes E i and F i . The electrode F j+1 (j= 1, 2, ...(n-1)) of the semiconductor element U j+1 is linked with the electrode E j of the semiconductor element U j through the coupling portion K j and the electrode F₁ of the semiconductor element U₁ is connected to an external connection terminal 11 and the electrode E n of the semiconductor element U n is connected to an external connection terminal 12 through the coupling portion K n and the electrode F₀. Accordingly, the semiconductor elements U₁ to U n are sequentially connected in series through the coupling portions K₁ to K n-1 and connected to the external connection terminals 11 and 12. Consequently, upon incidence of light, there is developed across the external connection terminals 11 and 12 the photovoltage that is equal to the sum of voltage produced by the semiconductor elements U₁ to U n . In addition, by forming the electrodes E i and F i of the semiconductor element U i as the reflective electrodes as described previously in respect of Fig. 3, incident light can efficiently be utilized by the semiconductor U i , providing for increased photovoltage per unit area of the substrate 1. By virtue of the fact that the layer of the electrode E i contacting the non-single-crystal semiconductor laminate member Q i is formed as the aforesaid metal oxide layer, an excellent ohmic contact can be made between the electrode E i and the non-single-crystal semiconductor laminate member Q i , so that high photovoltage can be obtained from the semiconductor element U i with practically no loss. These features are made more marked by virtue of the fact that, in accordance with the teachings of the present invention, the layer of the electrode E i contacting the non-single-crystal semiconductor laminate member Q i is formed of a tin oxide or a metallic oxide consisting principally thereof, or an indium oxide or a metallic oxide consisting principally thereof, depending on whether the non-single-crystal semiconductor layer of the non-single-crystal semiconductor laminate member Q i contacting the electrode E i is P-type or N-type. Where the groove 0 j cut in the non-single-crystal semiconductor laminate member Q j is extended into the electrode E j as illustrated, the coupling portion K j extending from the electrode F j+1 makes side-contact with the electrode E j and hence makes good ohmic contact therewith, ensuring to obtain large electromotive force across the external connection terminals 11 and 12 with no appreciable loss. This is particularly the case in the practice of the present invention where the coupling portion K j and the electrode E j are linked with each other through their metal oxide layers. Since the isolating portion H j is formed to extend into the non-single-crystal semiconductor laminate member Q j as illustrated, substantially no leakage occurs through the non-single-crystal semiconductor laminate members Q j between the electrode E j and F j+1 , ensuring to obtain large electromotive force across the external connection terminals 11 and 12. In the embodiment of Figs. 1 and 2, the non-single-crystal semiconductor laminate member Q₁ of the semiconductor element U₁ is formed on the electrode E₁ to extend onto the substrate 1 passing on the side surface of the electrode E₁ on the opposite side from the non-single-crystal semiconductor laminate member Q₂, and the electrode F₁ is formed on the non-single-crystal semiconductor laminate member Q₁ to extend onto the substrate 1 passing on the side surface and the extended portion is used as the external connection terminal 11. With such an arrangement, the series circuit of the semiconductor elements U₁ to U n can easily be connected at one end to the external connection terminal 11. This permits simplification of the construction of photoelectric conversion device as a whole. Further, in the embodiment of Figs. 1 and 2, the non-single-crystal semiconductor laminate member Q n is formed to extend on the side surface of the electrode E n on the opposite side from the electrode E n-1 towards the substrate 1. The electrode F₀ is formed on the non-single-crystal semiconductor laminate member Q n to extend to the substrate surface and the electrode F₀ is coupled with the electrode E n through the coupling portion K n . And the extended portion of the electrode F₀ on the substrate 1 is used as the external connection terminal 12. Accordingly, the series circuit of the semiconductor elements U₁ to U n can easily be connected at one end to the external connection terminal 12, permitting simplification of the overall structure of the photoelectric conversion device. A description will be given of other embodiments of the photoelectric conversion device of the present invention. In the embodiment of the photoelectric conversion device of the present invention depicted in Figs. 1 to 3, the groove O j extends across the electrode E j to reach the substrate 1, and the coupling portion K j makes contact only with the side of the electrode E j exposed to the groove O j . In other embodiment of the photoelectric conversion device of the present invention, however, as shown in Fig. 6A, the groove O j is not extended into the electrode E j and the coupling portion K j is formed to make contact only with the top of the electrode E j exposed to the groove O j . Further, as shown in Fig. 6B, the width of the groove O j in the electrode E j is made smaller than in the non-single-crystal semiconductor laminate member Q j and the coupling portion K j is formed to make contact with the top and side of the electrode E j exposed to the groove O j . Moreover, according to another embodiment, as shown in Fig. 6C the groove O j is extended into the substrate 1 with a greater width than in the electrode E j , and the coupling portion K j is formed to make contact with the side and bottom of the electrode E j exposed to the groove O j . According to another embodiment, as shown in Fig. 6D, the groove O j is extended across the electrode E j as in the case of Fig. 6B and into the substrate 1 as in the case of Fig. 6C, and the coupling portion K j is formed to make contact with the top, side and bottom of the electrode E j exposed to the groove O j . In the embodiments illustrated in Figs. 6A to D, the groove O j can easily be formed by the same laser beam scanning as that for the non-single-crystal semiconductor laminate member Q j described previously in respect of Fig. 5 but, in this case, the intensity of the laser beam is adjusted suitably. It will be seen that any of the structures of the embodiments provided with the grooves shown in Figs. 6A to D possesses the same advantages as are obtainable with the embodiment of Figs. 1 to 3, though not described in detail. In the embodiment of the photoelectric conversion device shown in Figs. 1 to 3, the electrodes F j and F j+1 of the semiconductor elements U j and U j+1 are isolated by the isolating portion provided in the form of a groove and the isolating portion H j extends into the non-single-crystal semiconductor laminate member Q i . The embodiment of Fig. 7B corresponding to Fig. 3 is identical in construction with the embodiment of Figs. 1 to 3 except that the isolating portion H j extends across the non-single-crystal semiconductor laminate member Q i . Such isolating portions H₁ to H n can easily be formed by adjusting the scanning speed and/or power of the laser beam in the laser beam scanning for the conductive layer 43 described previously in connection with Fig. 5. Further, the embodiment of Fig. 7C corresponding to Fig. 3 photoelectric conversion device of the present invention is identical in construction with the embodiment of Figs. 1 to 3 except that the isolating portion H j consists of the groove 16 defined between the electrodes F j and F j+1 and the oxide 17 of the non-single-crystal semiconductor forming the non-single-crystal semiconductor laminate member Q j , which is formed in the upper half portion thereof. Such isolating portions H₁ to H n can easily be formed by carrying out in an oxygen atmosphere the laser beam scanning for the conductive layer 43 described previously with respect to Fig. 5. Likewise, the embodiment of Fig. 7D is identical in constructions with the embodiment of Figs. 1 to 3 except that the isolating portion H j is formed by an oxide 18 which results from oxidation of the conductive material forming the electrodes F j and F j+1 and separates them as shown. Such isolating portions H₁ to H n can easily be formed by the same laser beam scanning as that employed for the third embodiment of Fig. 7C. The embodiment of Fig. 7A is also identical in construction with the embodiment of Figs. 1 to 3 except that the isolating portion H j is formed by the groove 16 which hardly extends into the non-single-crystal semiconductor laminate member Q j but separates the electrodes E j and E j+1 as shown. Such isolating portion H₁ to H N can easily be formed by adjusting the scanning speed and/or power of the laser beam in the laser beam scanning as in the embodiment of Fig. 5. Another embodiment of Fig. 7E is identical in construction with the embodiment of Figs. 1 to 3 except that the isolating portion H j has such a structure that an oxide layer is formed on the interior surface of the groove described previously with respect to Fig. 3. Such an isolating portion H j can easily be formed by perfoming the laser beam scanning for the conductive layer 43 mentioned previously with regard to Fig. 5 in the oxygen atmosphere as in the embodiment of Fig. 7D. It is evident that all the arrangements of the embodiments having the isolating portions H₁ to H n , shown in Figs. 7A to E, have the same features as those of the embodiment of Figs. 1 to 3, though not described in detail. In the embodiment of Figs. 1 to 3, the series circuit of the semiconductor elements U₁ to U n constituting one photoelectric conversion device on the substrate 1 is connected at one end to the external connection terminal 11, which is formed by the extended portion of the electrode E₁ of the semiconductor element U₁ on the substrate 1, and connected at the other end to the external connection terminal 12 which is formed by the extended portion of the electrode F₀ on the substrate 1 and connected to the electrode E n through the coupling portion K n . In another embodiment of the present invention, however, a plurality a x b of such photoelectric conversion devices, each made up of the n semiconductor elements U₁ to U n connected in series as shown in Figs. 1 and 2, are arranged in the form of a matrix consisting of a rows and b columns as illustrated in Figs. 9 and 10 corresponding to Figs. 1 and 2. In Figs. 9 and 10 reference character M rs (r=1, 2,... a and s=1, 2,...b) indicates each photoelectric conversion device disposed at one of the intersections of rows and columns. The photoelectric conversion devices M₁₁ to M 1b , M₂₁ to M 2b , ... and M a1 to M ab are isolated by grooves 26 from adjacent ones of them. In the embodiment illustrated in Figs. 9 and 10, the photoelectric conversion device M rs is identical in construction with the photoelectric conversion device of the embodiment of Figs. 1 to 3 except in the following points: As shown in Fig. 11A, an electrode E₀ similar to the electrodes E₁ to E n is formed on the substrate 1 on the side of the electrode E₁ of the semiconductor element U₁ on the opposite side from the electrode E₁ and the electrode E₀ is isolated by a groove G₀ similar to those G₁ to G n-1 . Further, the non-single-crystal semiconductor laminate member Q₁ of the semiconductor element U₁ does not extend from the electrode E₁ to the substrate surface but instead it extends across the groove G₀ to the marginal edge of the electrode E₀. The electrode F₁ of the semiconductor element U₁, which is formed to cover the non-single-crystal semiconductor laminate member Q₁ and extend to the substrate 1 in the first embodiment, is formed to extend to the marginal edge of the non-single-crystal semiconductor laminate member Q₁ correspondingly. And the external connection terminal 11 is formed by the end portion of the electrode F₁ on the non-single-crystal semiconductor laminate member Q₁ on the opposite side from the electrode F₂. Moreover, as shown in Fig.11B, the non-single-crystal semiconductor laminate member Q n of the semiconductor element U n is formed to extend to the marginal edge of the electrode E n . The electrode F₀, though formed to cover the non-single-crystal semiconductor laminate member Q n and to extend to the substrate 1 in the embodiment of Figs. 1 to 3, extends to the marginal edge of the non-single-crystal semiconductor laminate member Q n correspondingly. And the external connection terminal 12 is formed by the end portion of the electrode F₀ on the non-single-crystal semiconductor laminate member Q n on the opposite side from the electrode F n . The above is a description of the abovesaid another embodiment of the photoelectric conversion device of the present invention. The photoelectric conversion device of such a construction can be obtained by a manufacturing method similar to that employed for the fabrication of the photoelectric conversion device of the embodiment of Figs. 1 to 3. That is, as shown in Figs. 12A to G corresponding to Figs. 5A to G, a x b photoelectric conversion devices M₁₁ to M 1b , M₂₁ to M 2b , ... and M a1 to M ab are formed on the substrate 1 by a sequence of steps similar to those shown in Figs. 5A to G, though not described in detail. Next, as shown in Fig. 12H, the grooves 26 are formed by the same laser beam scanning as described previously in respect of Fig. 4. Next, the light transparent antireflection and protective film 15 (not shown) is formed. In this way, the structure of the embodiment referred to previously in conjunction with Figs. 9 and 10 is obtained. The above is a description of the abovesaid another embodiment and its manufacturing method. The photoelectric conversion device of Figs. and 10 is identical in construction with the embodiment of Figs. 1 to 3 except in the abovesaid points, and hence presents the same advantages as those obtainable with the embodiment of Figs. 1 to 4, though not described in detail. Moreover, according to the embodiment of Figs. 9 and 10, the photoelectric conversion devices M₁₁ to M 1b , M₂₁ to M 2b , ...and M a1 to M ab are formed on the substrate 1 and separated by the grooves 26. If the substrate 1 is formed by a flexible, insulating sheet-like member, it can easily be severed at the positions of the grooves 26 into a x b independent photoelectric conversion devices. Incidentally, the embodiment of Figs. 9 and 10 can also be modified and varied in the same manner as in the second to ninth embodiments of Figs. 6 to 8 which are modifications and variations of the embodiment of Figs. 1 to 4. While in the foregoing embodiments of the present invention the groove O j formed in the non-single-crystal semiconductor laminate members Q j is shown to be a groove which continuously extends in the vertical direction to completely isolate the non-single-crystal semiconductor laminate memers Q j and Q j+1 mechanically, the groove O j may also be formed to discontinuously extend in the vertical direction so that the non-single-crystal semiconductor laminate members Q j and Q j+1 may not completely be isolated by the groove O j from each other.

Claims: A photoelectric conversion device comprising an insulating substrate (1) and a plurality of adjacent series-connected photoelectric elements U i (i=1,2,...n) each of which comprises a silicon based non-single crystal semiconductor layer Q i having formed therein at least one semiconductor junction and first and second electrodes E i , F i which sandwich said semiconductor layer Q i therebetween so that said first electrode E i makes contact with the surface of a first conductivity type portion of the semiconductor layer Q i and said second electrode F i makes contact with the surface of a second conductivity type portion of the semiconductor layer Q i , said second conductivity type being of opposite conductivity to said first conductivity type, and said photoelectric elements U i being series-connected with one another by virtue of one electrode F j+1 (j=1,2...(n-1)) of each element U j+1 having an integrally formed coupling portion K j in contact with the other electrode E j of another element U j , characterized in that said first and second electrodes E i , F i comprise electrically-conductive metal oxide layers contacting the respective surfaces of the semiconductor layer Q i , and the metal oxide layer contacting the P-type surface of the semiconductor layer is tin oxide or a metal oxide consisting principally of tin oxide, and the metal oxide layer contacting the N-type surface of the semiconductor layer is indium oxide or a metal oxide consisting principally of indium oxide. A photoelectric conversion device according to claim 1 wherein: the semiconductor element U i (i=1, 2,...n) comprises a non-single-crystal semiconductor laminate member Q i formed on the first electrode E i and having formed therein at least one semiconductor junction, and the second electrode F i is formed on the non-single-crystal-semiconductor laminate member Q i in opposing relationship to the first electrode E i ; the coupling portion K j is formed as an extension of the second electrode F j+1 ; the second electrode F i and the coupling portion K j comprise an electrically conductive metal oxide substantially different to the electrically conductive metal oxide of the first electrode E j . A photoelectric conversion device according to claim 2 wherein the first electrode E i and/or the second electrode F i comprises a single metal oxide layer. A photoelectric conversion device according to claim 2 wherein the first electrode E i and/or the second electrode F i comprises a multilayer structure (4,5). A photoelectric conversion device according to claim 4 wherein one of said first and second electrodes E i , F i is arranged to be light transparent, and the other of said first and second electrodes E i , F i includes a light reflective layer. A photoelectric conversion device according to claim 5 wherein said light reflective layer comprises a metallic layer. A photoelectric conversion device according to claim 5 or 6 wherein the interface between the non-single-crystal semiconductor laminate member Q i and that one of said first and second electrodes which includes a light reflective layer has irregularities defining a diffuse reflection surface. A photoelectric conversion device according to any of claims 2 to 7, wherein the non-single-crystal semiconductor laminate member Q i is partly or wholly formed of Si, Si x C 1-x (0< x < 1), Si x Ge 1-x (0 < x < 1) or Si₃N 4-x (0< x < 4). A photoelectric conversion device according to any of claims 2 to 8, wherein the non-single-crystal semiconductor laminate member Q i comprises a first non-single-crystal semiconductor layer (8) of a first conductivity type, an I-type second non-single-crystal semiconductor layer (9) formed on the first non-single-crystal semiconductor layer, and a third non-single-crystal semiconductor layer (10) of a second conductivity type opposite to the first conductivity type formed on the second non-single-crystal semiconductor layer, and wherein the semiconductor junction is a PIN junction. A photoelectric conversion device according to claim 9, wherein the substrate and the first electrode E i are light-transparent, and wherein the first non-single-crystal semiconductor layer (8) contacts the first electrode E i and has a wider energy gap than do the second and third non-single-crystal semiconductor layers. A photoelectric conversion device according to claim 9, wherein the substrate and the first electrode E i are light-transparent, and wherein the first electrode E i contacts the first semiconductor layer and the first and third non-single-crystal semiconductor layers have a wider energy gap than does the second non-single-crystal semiconductor layer. A photoelectric conversion device according to claim 9, wherein the second electrode F i is light-transparent, and wherein the third non-single-crystal semiconductor layer (10) contacts the second electrode F i and has a wider energy gap than do the first and second non-single-crystal semiconductor layers. A photoelectric conversion device according to claim 9, wherein the second electrode F i is light-transparent and contacts the third semiconductor layer, and wherein the first and third non-single-crystal semiconductor layers have a wider energy gap than does the second non-single-crystal semiconductor layer. A photoelectric conversion device according to any of claims 2 to 13, wherein the first electrode E j and the first electrode E j+1 are separated by a first groove G j , wherein the second electrode F j+1 extends on the non-single-crystal semiconductor laminate member Q j in opposing relation to the first electrode E j , wherein a second groove O j is cut in the non-single-crystal semiconductor laminate member Q i to extend between the second electrode F j+1 and the first electrode E j , and wherein the coupling portion K j extends into the second groove O j . A photoelectric conversion device according to claim 14, wherein the second groove 0 j extends into the first electrode E j . A photoelectric conversion device according to claim 15, wherein the second groove O j extends into the first electrode E j with a smaller width than it extends into the non-single-crystal semiconductor laminate member Q j . A photoelectric conversion device according to claims 15 or 16, wherein the second groove O j extends through the first electrode E j and into the substrate where it has a width greater than its width in the first electrode E j . A method of manufacturing a photoelectric conversion device comprising forming a plurality of spaced apart first electrodes (E i ) on an insulating substrate (1), forming a silicon based non-single crystal semiconductor layer (42) having a first conductivity type portion overlying all of the spaced-apart first electrodes (E i ), said semiconductor layer (42) having formed therein at least one semiconductor junction and having a second, opposite conductivity type portion remote from said first conductivity type portion, dividing said semiconductor layer (42) so as to define a plurality of separate semiconductor layers (Q i ) each associated with a respective one of said plurality of first electrodes (E i ) and so as to expose a portion of each of the respective first electrodes, forming a second electrode layer (43) overlying the second conductivity type portions of all of the separate semiconductor layers (Q i ) and contacting the exposed portions of the first electrodes (E i ), and dividing the second electrode layer (43) so as to define a plurality of separate second electrodes (F i ) each associated with a respective first electrode (E i ) and a respective one of the separate semiconductor layers (Q i ) so as to constitute therewith a photoelectric element (U i ), each photoelectric element being series connected to adjacent like photoelectric elements by providing one electrode (F j+1 ) of each element (U j+1 ) with an integrally formed coupling portion K j in contact with the other electrode E j of another element, characterized in that the first and second electrode layers are formed as electrically-conductive metal oxide layers, and the metal oxide layer contacting the P-type surface of the semiconductor layer is tin oxide or a metal oxide consisting principally of tin oxide, and the metal oxide layer contacting the N-type surface of the semiconductor layer is indium oxide or a metal oxide consisting principally of indium oxide. A method according to claim 18, said method comprising the steps of: forming on the substrate (1) a first conductive metal oxide layer (41); subjecting the first conductive layer (41) to first laser beam scanning to form therein (n-1) (where n is an integer larger than 2) sequentially arranged first grooves G₁ to G n-1 and n sequentially arranged first electrodes E₁ to E n each comprising a conductive metal oxide layer, separated by the first grooves G₁ to G n-1 , respectively; forming the non-single-crystal semiconductor laminate layer (42) on the substrate (1), the semiconductor layer (42) having formed therein at least one semiconductor junction to cover the first grooves G₁ to G n-1 and the first electrodes E₁ to E n so that those regions of the non-single-crystal semiconductor laminate member on the electrodes E₁ to E n define non-single-crystal semiconductor laminate members Q₁ to Q n , respectively; subjecting the non-single-crystal semiconductor laminate members Q₁ to Q n to second laser beam scanning to form therein (n-1) sequentially arranged second grooves 0₁ to 0 n-1 to expose therethrough the first electrodes E₁ to E n-1 to the outside, respectively; forming the second conductive layer (43) to extend continuously over the non-single-crystal semiconductor laminate members Q₁ to Q n and into the grooves 0₁ to 0 n-1 to provide coupling portions K₁ to K n-1 which are connected to the first electrodes E₁ to E n-1 through the grooves 0₁ to 0 n-1 ; and subjecting the second conductive layer (43) to third laser beam scanning to form therein isolating portions H₁ to H n-1 on the non-single-crystal semiconductor laminate members Q₁ to Q n-1 , respectively, and to form the second electrodes as n sequentially arranged electrodes F₁ to F n each of which are isolated by the isolating portions H₁ to H n-1 , respectively, and opposite the first electrodes E₁ to E n through the non-single-crystal semiconductor laminate members Q₁ to Q n , respectively. A method according to claim 19 wherein the second groove 0 j (j=1, 2,...(n-1)) is formed to extend into or through the first electrode E j so that the coupling portion K j may be connected with an increased area of the first electrode E j . A method according to claim 19 or 20 wherein at least one of the first, second and third laser beam scanning steps is performed in the air and is followed by treatment using a gas, such as hydrogen fluoride (HF), hydrogen chloride (HCl) or a fluorocarbon gas (CF₄, CFH₃, CClF₂, or the like), or a liquid, such as hydrofluoric acid (HF) hydrochloric acid (HCl) or a fluorocarbon liquid (C₂F₃Cl₄, C₂F₃Cl₃ or the like).

Inventors: YAMAZAKI, SHUNPEI C/O SEMICONDUCTOR ENERGY
Applicants: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Application year: 1983
Main classification: H01L27
IPC codes: H01L27, H01L31