A METHOD FOR PRODUCING A RESIST IMAGE INVOLVING THE USE OF POLYSTYRENE-TETRATHIAFULVALENE POLYMER AS A DEEP-ULTRAVIOLET PRINTING MASK

Abstract: A polystyrene-tetrathiafulvalene (PSTTF)/polymer is used as a negative photoresist for forming a printing mask on a deep-ultraviolet sensitive polymer, such as polymethyl methacrylate.

Description: A METHOD FOR PRODUCING A RESIST IMAGE INVOLVING THE USE OF POLYSTYRENE-TETRATHIAFULVALENE POLYMER AS A DEEP-ULTRAVIOLET PRINTING MASK This invention relates to a method for producing a resist image involving the use of polystyrene-tetrathiafulvalene polymer as a deep-ultraviolet printing mask. In the manufacture of microelectronic devices and circuits, various fabrication techniques are used. One is a conformable masking technique as described by H. I. Smith, Rev. Sci. Instr., Vol. 40, p. 729, (1969). In this technique, a mask closely conforms to the surface topography of the substrate to be processed. This allows the mask and the wafer to be intimately contacted. As with other proximity printing techniques, very little hardware change is required to reduce the printing wavelengths to the deep-W region (200-300 nm), so that minimum feature size and the height-to-width aspect ratio can be improved. Polychromatic exposure can be used to reduce standing waves and other interference effects as well as exposure times. Different types of resist profiles can also be produced with this technique. However, the conformable printing technique is inherently susceptible to mask and wafer damage due to foreign particles. When the contact between the mask and the wafers is not perfect, the fringes created by any uneven mask-to-wafer gap can contribute to an uneven exposure distribution and will in turn produce uneven linewidth distributions. Because the wafer and the mask have to be safely separated during alignment, simultaneously viewing both the alignment marks on the mask and the wafer becomes a problem when a high numerical aperture alignment microscope is used to achieve high accuracy. Even after the mask and the wafer are perfectly aligned at the alignment separation, the alignment accuracy will be lost due to residual lateral movements caused by the vertical motion to bring the mask and the wafer closer for exposure. Near-UV optical projection printing can be defect-free but cannot achieve a high aspect ratio in the photoresist image. Also, the achievable image height for projection printing systems is smaller than that for proximity printing, because a large part of the depth-of-field in the microfabrication projection lens is wasted in keeping the wafer in focus. Thus, while optical projection and electron beam systems inherently offer a freedom from defects and a high alignment accuracy, they both suffer from low aspect ratios in the resist image caused by focus tolerance and electron scattering, respectively. In order to combine the advantages of projection systems with the advantages (high aspect ratio and profile-manipulating capabilities) of deep-tN conformable printing, a technique termed portable-conformablemask technique (PCM) has been developed. This technique uses multiple resist layers, where a thin resist layer is spun on top of a thick deep-W resist layer. The thin resist on top is chosen to be opaque for deep-UV light. It is first delineated by an optical projection or an electron beam mask aligner, and then serves as a perfect conformable mask for the bottom deep-W resist, which can now be delineated with a blanket deep-W exposure. The mask-wafer combination can be carried away from the mask aligner, and hence is termed "portable". The mask is no longer built on a transparent substrate as conventional masks are built. Therefore, despite the lack of suitable substrates, the blanket exposure of the PCM system can be extended to much shorter wavelengths as well. Such PCM systems are described by B. J. Lin in SPIE, Vol. 174, Developments in Semiconductor Nicrolithography IV, p. 114 (1979); B. J. Lin, et al J. Vac. Sci. Technol., Vol. 19, No. 4, p. 1313, Nov./Dec. 1981; B. J. Lin, et al J. Vac. Sci. Technol., Vol. 16, p. 1669 (1979); and U. S. Patent 4,211,834. As pointed out in these articles, the well known Novolac Resist System (such as AZ1350) has been used as a deep-W portable conformable mask for polymethyl methacrylate (PMMA) in a double-layer resist system for optical and electron beam exposures. For this system, both the top and bottom resist layers are positive. Residual exposure of the bottom layer during electron beam imaging of the top layer is acceptable. However, when a negative resist is used for the top layer, the residual exposure will reduce the contrast of the bottom layer. This invention seeks to provide a negative PCM system which is tolerant to the problem of residual exposure. Recently, as disclosed in published European Patent Application No 27180, a new class of E-beam, x-ray and photoresist materials based upon electroactive polymers and a halocarbon have been developed. Reference is also made to D. Hofer and F. B. Kaufman, Appl. Phys. Lett., Vol. 37, p. 314, (1980). The electroactive polymer consists of a homopolymer or copolymer having a pi donor molecule bonded thereto through functional groups or side chains having functional groups capable of reacting with the functional groups of the donor molecule. Examples of such electroactive polymers are polystyrene, chloromethylated styrene, polyglutamic acid, polyvinyl chloride, polyepichlorohydrin, poly (alpha halo-phosphazene), and poly (acrylic chloride). Examples of pi donor molecules are fulvalenes within the general formula: EMI3.1 wherein X is oxygen, sulfur, selenium, tellurium or any combination thereof and each of R1, R2, R3 and R4 is an organic substituent. Specific fulvalene pi donors include tetrathiafulvalene (TTF), its derivatives and Se analogs (TSeF) and its derivatives such as tetrathiafulvalenecarboxylic acid (TTFCO2H), tetraselenafulvalenecarboxylic acid (TSFCO2H), (hydroxymethyl)-tetrathiafulvalene (TTFCH2OH), hydroxymethyl-tetraselenafulvalene (TSeFCH2OH), (p-hydroxyphenyl)-tetrathiafulvalene (TTFC6H4OH), (p-hydroxyphenyl) tetraselenafulvalene (TSeFC H OH), (p-aminophenyl)-tetrathiafulvalene 64 (TTFC H NH ), (p-carboxyphenyl) -tetrathiafulvalene (TTFC H CO2H) and phenoxy-tetrathiafulvalene (PTTF). According to the invention, a method for producing a resist image comprising the successive steps of: (a) coating a substrate with a deep-ultraviolet sensitive polymer; (b) coating said deep-ultraviolet sensitive polymer with a layer of a negative photoresist; (c) pattern exposing the layer of negative photoresist with E-beam or x-ray radiation; (d) developing the negative photoresist to reveal portions of the underlying deep-ultraviolet sensitive polymer; (e) exposing said revealed portions of the underlying deep-ultraviolet sensitive polymer with deep-ultraviolet radiation; and (f) developing the exposed portions of the deep-ultraviolet sensitive polymer with a preferential solvent; characterised by the negative photoresist being halocarbon-doped electroactive polystyrene-tetrathiafulvalene polymer having the repeating unit: EMI4.1 wherein the value of X is O < X < l and n is from about 50 to about 10,000. The PSTTF polymer employed in the aforedefined method provides an excellent negative resist material giving high resolution and sensitivity. For example, features smaller than 200 nm employing an 2 2 E-beam dosage of 10ssC/cm or x-ray energy of 50 mJ/cm can be readily and conveniently obtained. The method of this invention is especially useful for providing a patterned PSTTF coating on a deep-UV mask substrate used in deep-ultraviolet proximity printing or projection printing mask. The method can also be advantageously practised to provide a combination of PSTTF with a deep-ultraviolet resist to form a portable conformable mask. How the invention can be carried out will now be described. Any of the known deep-ultraviolet sensitive polymers, e.g., polymethyl methacrylate, the alpha olefin-sulfur dioxide-cyclopentene/bicycloheptene/ methyl methacrylate terpolymer of U. S. Patent No. 3,898,350, polymethyl isopropyl ketone, etc., can be employed, typically on electronics grade silica as the substrate although, of course, other substrate materials are contemplated as well. The deep-ultraviolet sensitive polymer can be applied to the substrate in any number of ways with spinning from a solution of the polymer, for example, an 8-10% by weight solution of a polymethyl methacrylate of about 400,000 average molecular weight in chlorobenzene, onto the surface of the substrate followed by heat treatment to accelerate evaporation of the solvent being an especially advantageous technique. The thickness of this polymer layer can vary widely, with thicknesses of from about 0.2 ssm to about 10 pm, and preferably from about 0.5 pm to about 3 Mm generally providing good results. The polymer can be applied to the desired thickness in a single application or can be built up from a series of successive applications. Following application and drying of the deep-W sensitive layer, an organic solvent solution of polystyrene-tetrathiafulvalene (PSTTF) containing a halocarbon acceptor is applied to it, advantageously by means of the spin casting technique, to provide a layer ranging in thickness of from about 0.1 pm to about 2 pm, and preferably from about 0.2 pm to about 0.5 pm. Suitable solvents for the PSTTF include toluene, chloroform, methylene chloride, cyclopentanone, tetrahydrofuran and methyl ethyl ketone. The concentration of PSTTF in the solvent can vary widely, with 8-10% by weight solutions being generally suitable. Typical halocarbon acceptors which can be used are CCL4, CBr4, Cl4, C2Cl6, C2Cl2Br4, C3Br4H4, C2Br2C14, C2H2Cl4, 2 C3C18, CHBr3, CHCl3, CH2C12, and the like, present in an amount ranging from about 0.01 to about 10 times the concentration of the donor moiety. The halocarbon acceptor makes the PSTTF film sensitive to radiation, such that upon exposure to E-beam or x-ray radiation, generally carried out in a vacuum, only the unexposed areas of the polymer can be removed from the underlying deep-ultraviolet sensitive polymer by washing or spraying, i.e, developing, with a selective non-polar solvent such as any of the solvents from which the PSTTF was originally applied. When E-beam radiation is employed (scanning or blanket exposure), the charge density can advantageously be in the range of from about 1 x 10 C/cm2 to about 50 x 10 C/cm2 and preferably from about 2 x 10 2 -6 2 C/cm to about 30 x 10 C/cm . When x-ray radiation is employed, a 2 2 dose of from about 10 mJ/cm to about 100 mJ/cm , and preferably from 2 2 about 25 mJ/cm to about 65 mJ/cm , can be used with good results Following removal of the unexposed portions of the PSTTF layer, the underlying areas of the deep-W sensitive polymer are blanket exposed with deep-W radiation (from about 200 to about 260 nm wavelength), advantageously at a charge density of from about 100 mJ/cm2 to about 2 2 2 2000 mJ/cm , and preferably from about 500 mJ/cm to about 1000 mJ/cm The exposed portions of the polymer are thereafter removed with a selective solvent therefor, e.g., methyl isobutyl ketone, to provide the negative resist image. If desired, the PSTTF mask can be recycled, e.g., employing known oxygen plasma cleaning techniques. Other additive or subtractive operations such as metallization can also be carried out employing procedures which are well known in the art. The following example is further illustrative of the method of the invention: EXAMPLE A silicon dioxide wafer was coated to a total thickness of 2.4 Wm with a polymethyl methacrylate (PMMA) of 500,000 average molecular weight. The PMMA was applied by spin coating at 1,000 rpm from a 10% by weight solution of the polymer in 2-methoxyethyl ether (diglyme) to provide an initial 1.2 pm layer upon drying. Following baking at 850C for 20 minutes, another 1.2 pm thickness (upon drying) of the PMMA was applied followed by baking at l600C for 1 hour. A polystyrene-tetrathiafulvalene (PSTTF) layer of 0.6 pm thickness (upon drying) was applied to the PMMA layer by spin coating at 2,500 rpm from a 20 g1 cyclopentanone solution of 4.7 mg PSTTF and 1 mg C2Br2C14 as the halocarbon acceptor. Following evaporation of the cyclopentanone (without baking), the PSTTF was exposed to scanning E-beam radiation for 2 a charge density of about 10 ii C/cm . Comparable results can be 2 achieved employing x-ray radiation for a dosage level of 50 mJ/cm Following removal of the exposed regions of the PSTTF with tetrahydrofuran, the underlying portions of the PMMA layer were blanket 2 exposed with 800 mJ/cm of deep-ultraviolet radiation (200-260 nm wavelength) and the exposed PMMA was removed with methyl isobutyl ketone to provide the negative resist image. Additional operations, optional in nature, included ashing in a forming gas plasma in a barrel reactor at 200 watts and 17.3 Pascals (0.13 Torr) for 10 minutes followed by evaporation of 0.8 pm aluminum and lift-off of the aluminum in trichloroethylene.

Claims: CLAIMS 1. A method for producing a resist image comprising the successive steps of: (a) coating a substrate with a deep-ultraviolet sensitive polymer; (b) coating said deep-ultraviolet sensitive polymer with a layer of a negative photoresist; (c) pattern exposing the layer of negative photoresist with E-beam or x-ray radiation; (d) developing the negative photoresist to reveal portions of the underlying deep-ultraviolet sensitive polymer; (e) exposing said revealed portions of the underlying deep-ultraviolet sensitive polymer with deep-ultraviolet radiation; and (f) developing the exposed portions of the deep-ultraviolet sensitive polymer with a preferential solvent; characterised by the negative photoresist being halocarbon-doped electroactive polystyrene-tetrathiafulvalene polymer having the repeating unit: EMI8.1 wherein the value of X is O(X(1 and n is from about 50 to about 10,000. 2. A method as claimed in Claim 1, wherein the halocarbon in the negative photoresist is selected from the group consisting of CCl4, CBr4, Cl4, C2C16, C2Cl2Br2, C3Br4H4, C2Br2Cl4, C2H2C14, C gr C C1 CHBr3 and CH2Cl2. 3. A method as claimed in Claim 2, wherein the halocarbon is present at a level of from 0.01 to 10 times the concentration of the tetrathiafulvalene moiety of the electroactive polymer. 4. A method as claimed in any of claims 1 to 3, wherein X in said electroactive polymer has the value 1. 5. A method as claimed in any preceding claim, wherein n in said electroactive polymer has an average value of about 100. 6. A method as claimed in any preceding claim, wherein the deep-W sensitive polymer is applied to a total thickness of from about 0.2 pm to about 10 pm. 7. A method as claimed in Claim 6, wherein the deep-W sensitive polymer is applied to a total thickness of from about 0.5 pm to about 3 mm. 8. A method as claimed in any preceding claim, wherein the deep-W sensitive layer is of an alkyl methacrylate polymer. 9. A method as claimed in Claim 8, wherein the alkyl methacrylate polymer is a polymethyl methacrylate. 10. A method as claimed in Claim 9, wherein the polymethyl methacrylate possesses an average molecular weight of from about 30,000 to about 2,000,000. 11. A method as claimed in claim 9 or claim 10, wherein the polymethyl methacrylate layer is applied by spin coating from a solution of 2-methoxyethyl ether. 12. A method as claimed in any preceding claim, wherein the negative photoresist layer is exposed to E-beam radiation for a charge density in -6 2 -6 2 the range of from about 1 x 10 6 C/cm to about 50 x 10 C/cm 13. A method as claimed in any of claims 1 to 11, wherein the negative photoresist layer is exposed to x-ray radiation for a dose of from about 2 2 10 mJ/cm to about 100 mJ/cm 14. A method as claimed in any preceding claim, wherein the deep-W sensitive polymer is exposed to deep-UV radiation at a charge density of 2 2 from about 100 mJ/cm to about 2000 m3/cm 15. A method as claimed in any preceding claim, wherein the negative photoresist layer is developed with tetrahydrofuran or cyclopentanone.

Inventors: CHAO, VIVIAN WEI-WEN, KAUFMAN, FRANK BENJAMIN, KRAMER, STEVEN ROBERT, LIN, BURN JENG
Applicants: INTERNATIONAL BUSINESS MACHINES CORPORATION
Application year: 1983
Main classification: G03F7
IPC codes: G03F7, H01L21