CERAMIC COMPOSITION OF HIGH DIELECTRIC CONSTANT

Abstract: A ceramic compositions of a high dielectric constant is provided, which consists of 100 mol parts of barium metatitanate (BaTiO₃), (2/3) (7±1) mol parts of cerium dioxide, and 7± mol parts of titanium dioxide (TiO₂), and to which 0.05 to 0.2 mol part of MnO₂ is added as needed. The ceramic composition has a ceramic microstructure in which a grain size is as small as 2 to 3 µm and a pore size is small to be not more than 3 µm. The ceramic composition has a high dielectric constant of about 10,000, a high breakdown voltage, and little dependency on voltage. The ceramic composition is very suitable as a thin dielectric film for laminated ceramic chip capacitor.

Description: TITLE OF THE INVENTION: CERAMIC COMPOSITION OF HIGH DIELECTRIC CONSTANT BACKGROUND OF THE INVENTION: I. Field of the Invention The present invention relates to a ceramic composition of a high dielectric constant which essentially consists of barium titanate and has a ceramic microstructure, and which is primarily used for a ceramic capacitor. II. Description of the Prior Art It is conventionally known that barium titanate as a major component have been used as materials for various ceramic capacitors. As a matter of fact, barium titanate has ferroelectric characteristics. More particularly, isometric perovskite barium titanate is obtained at a high temperature; tetragonal barium titanate where the crystal is slightly elongated along the C-axis is obtained at a temperature below 1200C; orthorhombic barium titanate is obtained at a temperature of about 0 C; and rhombic barium titanate is obtained at a temperature of about -800C. The phase transition point at the temperature of about 1200C is especially called the Curie point. Barium titanate shows paraelectric characteristics at a higher temperature than the Curie point, whereas it shows ferroelectric characteristics at a lower temperature than the Curie point The dielectric constant of barium titanate is as high as 10,000 at the Curie point. It is thus noted that barium titanate by itself does not have a high dielectric constant at room temperature. Various compact capacitors are commercially available in which the high dielectric constant of barium titanate at about the Curie point is obtained at a temperature lower than this point so as to allow the capacitor to have a proper (electrostatic) capacitance at room temperature. The peak value of the dielectric constant at a high temperature can be shifted by additives so as to obtain the peak value at a lower temperature. These additives are called a shifter and are generally selected from a stannate such as BaSn03, SrSnO3, CaSnO3, PbSnO3, CuSnO31 ZnSnO3 and CdSnO3; a zirconate such as BaZrO3, CaZrO3 and SrZrO3; and a titanate such as SrTiO3 and PbTiO3. The effect of the shifter is greatest for a stannate, followed by a zirconate and a titanate, in that order. A barium titanate compound containing a shifter has been used for a ceramic capacitor of a single sheet lead type. Meanwhile, a laminate chip manufacturing technique has been recently developed, so that a dielectric sheet of 30 to 100 pm thickness can be easily obtained. A laminate ceramic chip capacitor is then developed having a structure in which a set of thin dielectric sheets sandwiched between electrodes is laminated together. The laminate ceramic chip capacitors have been widely used in various types of electronic equipment. In this manner, the conventional dielectric ceramic composition is often utilized as a thin laminate dielectric sheet. However, the laminate ceramic chip capacitor has a dielectric. of 10 to 20 pm thickness, whereas the conventional single-sheet ceramic capacitor has a dielectric of 100 to 10,000 pm thickness. As a result, the laminate ceramic chip capacitor is adversely affected by the intensity of the electric field about 5 to 10 times as much as is the conventional capacitor. For this reason, a strong demand has ariser for a composition which is less dependent on voltage. Furthermore, when the dielectric layer is thin, crystal defects of the ceramic material tend to affect electrical characteristics of the capacitor. As a result, the ceramic material must have a uniform grain size and a small number of pores each having a small diameter. SUMMARY OF THE INVENTION: It is, therefore, a first object of the present invention to provide a ceramic composition which has a high dielectric constant, a small number of crystal defects, little dependency on voltage, and a high breakdown voltage. In order to achieve the first object of the present invention, there is provided a ceramic composition of a high dielectric constant, essentially consisting of 100 mol parts of barium metatitanate (BaTiO3), (2/3)(7+1) mol parts of cerium dioxide (CeO2), and 7+1 mol parts of titanium dioxide (TiO2). This ceramic composition of a high dielectric constant has a ceramic microstructure in which a grain size and a pore diameter are small. At the same time, the ceramic composition of the present invention has a high dielectric constant, a high breakdown voltage and little dependency on voltage. However, the above ceramic composition has a small disadvantage in that the electrodes are visible through the thin dielectric layers, since the ceramic composition is vivid red, when the thin dielectric layer is alternately laminated with the electrode. It is a second object of the present invention to provide a ceramic composition of a high dielectric constant which solves the disadvantage presented by the first object thereof. In order to achieve the second object of the present invention, manganese dioxide (MnO2) is added in a small amount to the ceramic composition which consists of 100 mol parts of BaTiO3, (2/3) (7+1) mol parts of CeO2, and 7+1 mol parts of TiO2. Other objects, features, and advantages of the present invention will be apparent from the following description taken in conjunction with the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS: Fig. 1 is a graph for explaining a change in capacitance as a function of the temperature of a ceramic composition according to a first embodiment of the present invention; Fig. 2 is a sectional view of a laminated ceramic chip capacitor to which the ceramic composition of the present invention is applied; Figs. 3A to 3C are graphs for explaining the dielectric constant e of a square plate dielectric layer consisting of a ceramic composition of a second embodiment of the present invention as a function of the amount of MnO2 added to the ceramic composition of the second embodiment, the dissipation factor tans as a function of the amount of MnO2 added, and the insulation resistance IR as a function of the amount of Mono 2 added, respectively; and Figs. 4A to 4C are graphs for explaining the dielectric constant F of a laminated ceramic chip capacitor consisting of a ceramic composition of the second embodiment of the present invention as a function of the amount of MnO2 added to the ceramic composition of the second embodiment, the dissipation factor tans as a function of the amount of MnO2 added, and the insulation resistance IR as a function of the amount of MnO2 added, respectively. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS: Barium metatitanate (BaTiO3) is prepared by mixing barium carbonate (BaCO3) and titanium dioxide (TiO2) such that a ratio of Ba to Ti is 1.000 +0.005 1. The resultant mixture is then calcined at temperature of 1,100 to 1,1500C and is pulverized. CeO2 and TiO2 are then added to the pulverized grains such that a ratio of Ce to Ti is 2 : 3. After BaTiO3 is mixed with CeO2 and TiO2, a binder is then added to the mixture of BaTiO3, CeO2 and TiO2. A square sheet is formed of the resultant mixture, and is then calcined at a temperature range of 1,250 to 1,3500C. Thereafter, silver electrodes are formed on the squaresheet. Table 1 shows the electrical characteristics of the square sheets when each sample is calcined at different temperatures, EMI7.1 Compo- <SEP> Composition <SEP> T <SEP> G <SEP> P <SEP> # <SEP> tan# <SEP> IR <SEP> BDV <SEP> T.C <SEP> (%) <tb> sition <SEP> (mol <SEP> part) <tb> No. <tb> BaTiO3 <SEP> CeO2 <SEP> TiO2 <SEP> ( C) <SEP> ( m) <SEP> ( m) <SEP> (%) <SEP> (M#) <SEP> (kV/mm) <SEP> -30 <SEP> ( C) <SEP> +85( C) <tb> * <SEP> 1250 <SEP> 2 <SEP> 2 <SEP> 7700 <SEP> 0.6 <SEP> 1 <SEP> x <SEP> 106 <SEP> 21 <SEP> -12 <SEP> -75 <tb> 5 <SEP> 100 <SEP> 6 <SEP> 9 <SEP> 1300 <SEP> 3 <SEP> 3 <SEP> 6300 <SEP> 0.3 <SEP> 2 <SEP> x <SEP> 106 <SEP> 19 <SEP> -52 <SEP> -73 <tb> 1350 <SEP> 3 <SEP> 2 <SEP> 5100 <SEP> 0.2 <SEP> 2 <SEP> x <SEP> 106 <SEP> 19 <SEP> -54 <SEP> -70 <tb> BaTiO3 <SEP> (100) <tb> BaZrO3 <SEP> (28) <tb> Con- <SEP> CaTiO3 <SEP> (10) <SEP> 1380 <SEP> 16 <SEP> 23 <SEP> 11300 <SEP> 0.7 <SEP> 2 <SEP> x <SEP> 106 <SEP> 8 <SEP> -49 <SEP> -73 <tb> vention- <SEP> ZnO2 <SEP> (2.5) <tb> al <tb> MnO2 <SEP> (0.2) <tb> WO3 <SEP> (0.3) <tb> (Notes) 1. *: comparative example; T: calcination temperature; G: grain size; P: pore size; #: dielectric constant; tan#: dissipation factor; IR: insulation resistance; BDV: breakdown voltage; T.C: change in capacitance with respect to temperature (20 C reference). 2. The dissipation factor tan# is measured at an AC voltage of 1V and at a frequency of 1kH; the insulatiOn resistance IR is measured when a DC voltage of 50V is applied for 1 minute; and the breakdown voltage BDV is measured immediately before the respective elements break down as a voltage is continuously increased. Table 1 EMI8.1 Compo- <SEP> Composition <SEP> T <SEP> G <SEP> P <SEP> # <SEP> tan# <SEP> IR <SEP> BDV <SEP> T.C <SEP> (%) <tb> sition <SEP> (mol <SEP> part) <tb> No. <tb> BaTiO3 <SEP> CeO2 <SEP> TiO2 <SEP> ( C) <SEP> ( m) <SEP> ( m) <SEP> (%) <SEP> (M#) <SEP> (kV/mm) <SEP> -30( C) <SEP> +85( C) <tb> * <SEP> 1250 <SEP> 2 <SEP> 5 <SEP> 6900 <SEP> 2.8 <SEP> 8 <SEP> x <SEP> 104 <SEP> 16 <SEP> -62 <SEP> -67 <tb> 1 <SEP> 100 <SEP> 10/3 <SEP> 5 <SEP> 1300 <SEP> 2 <SEP> 4 <SEP> 7700 <SEP> 1.5 <SEP> 1 <SEP> x <SEP> 105 <SEP> 14 <SEP> -61 <SEP> -63 <tb> 1350 <SEP> 3 <SEP> 5 <SEP> 8400 <SEP> 1.3 <SEP> 2 <SEP> x <SEP> 105 <SEP> 14 <SEP> -58 <SEP> -63 <tb> 1250 <SEP> 2 <SEP> 3 <SEP> 9100 <SEP> 1.3 <SEP> 2 <SEP> x <SEP> 105 <SEP> 18 <SEP> -56 <SEP> -68 <tb> 2 <SEP> 100 <SEP> 4 <SEP> 6 <SEP> 1300 <SEP> 2 <SEP> 2 <SEP> 9400 <SEP> 0.9 <SEP> 3 <SEP> x <SEP> 105 <SEP> 20 <SEP> -55 <SEP> -68 <tb> 1350 <SEP> 3 <SEP> 3 <SEP> 9700 <SEP> 0.8 <SEP> 2 <SEP> x <SEP> 105 <SEP> 15 <SEP> -55 <SEP> -68 <tb> 1250 <SEP> 2 <SEP> 2 <SEP> 10600 <SEP> 0.9 <SEP> 4 <SEP> x <SEP> 105 <SEP> 23 <SEP> -52 <SEP> -74 <tb> 3 <SEP> 100 <SEP> 14/3 <SEP> 7 <SEP> 1300 <SEP> 2 <SEP> 3 <SEP> 9800 <SEP> 0.6 <SEP> 4 <SEP> x <SEP> 105 <SEP> 19 <SEP> -55 <SEP> -76 <tb> 1350 <SEP> 2 <SEP> 3 <SEP> 9300 <SEP> 0.6 <SEP> 3 <SEP> x <SEP> 105 <SEP> 16 <SEP> -59 <SEP> -79 <tb> 1250 <SEP> 2 <SEP> 2 <SEP> 9600 <SEP> 0.9 <SEP> 5 <SEP> x <SEP> 105 <SEP> 23 <SEP> -42 <SEP> -78 <tb> 4 <SEP> 100 <SEP> 16/3 <SEP> 8 <SEP> 1300 <SEP> 2 <SEP> 2 <SEP> 8900 <SEP> 0.5 <SEP> 6 <SEP> x <SEP> 105 <SEP> 23 <SEP> -53 <SEP> -74 <tb> 1350 <SEP> 3 <SEP> 3 <SEP> 8300 <SEP> 0.3 <SEP> 8 <SEP> x <SEP> 105 <SEP> 20 <SEP> -55 <SEP> -71 <tb> Table 2 EMI9.1 Composition <SEP> L <SEP> W <SEP> T <SEP> t <SEP> n <SEP> C <SEP> tan# <SEP> IRc <SEP> BDVc <SEP> F <tb> (mm) <SEP> (mm) <SEP> (mm) <SEP> ( m) <SEP> (nF) <SEP> (%) <SEP> (M#) <SEP> (kV) <SEP> (Kg) <tb> Composition <SEP> No. <SEP> 3 <tb> of <SEP> the <SEP> present <SEP> 3.03 <SEP> 1.51 <SEP> 1.02 <SEP> 35 <SEP> 23 <SEP> 153.4 <SEP> 1.2 <SEP> 5 <SEP> x <SEP> 104 <SEP> 1.3 <SEP> 10.6 <tb> invention <tb> Conventional <tb> composition <SEP> 3.15 <SEP> 1.53 <SEP> 1.05 <SEP> 33 <SEP> 23 <SEP> 182.5 <SEP> 3.4 <SEP> 9 <SEP> x <SEP> 104 <SEP> 0.4 <SEP> 4.8 <tb> (Notes) 1. L: element length; W: element width; T: element thickness; t: thickness of dielectric layer 1; n: number of laminated layers; C: capacitance; tan# dissipation factor; IRc: insulation resistance; BDVc: breakdown voltage; F: force against bending (span of 1 mm). 2. The dissipation factor tan#, the insulation resistance IRc and the breakdown voltage BDVc are measured in the same manner as in Table 1, and the force F is measured by the three-point measurement method. As may be apparent from Table 1, composition Nos. 2, 3 and 4 can be used as materials which comply with EIA standards (Y 5V). More particularly, these compositions satisfy the required capacitance change (200C reference) of +22% to -82% in a temperature range of -300C to +850C. The capacitors made of the above compositions have the same dielectric constant as the dielectric constant (10,000) of a commercially available ceramic capacitor (Y 5V). The conventional compositions which have a zirconate additive and which are used for Y 5V capacitors are shown in the lowest row of Table 1. The grain size of the ceramic material of the present invention is 2 to 3 pm; and a maximum pore size thereof is about 3 pm. However, the grain size of the conventional ceramic material is as large as 10 to 20 pm; and a maximum pore size thereof is as large as 20 pm. Differences in the grain size and the pore size of the microstructures result in an improvement of electrical characteristics of a laminated ceramic chip capacitor using a thin dielectric film. A laminated ceramic chip capacitor is prepared by using the material indicated by composition No. 3 at a calcination temperature of 1,300"C. Comparison results between the ceramic chip capacitor described above and a zirconate type laminated ceramic chip capacitor are shown in Table 2. It is noted that in Fig. 2 reference numeral 1 denotes dielectric layers each having a thickness of 35 pm; 2, palladium electrodes; and 3, silver electrodes. As may be apparent from Table 2, the laminated ceramic chip capacitor made of the material indicated by the composition No. 3 has a force against bending twice that of the conventional zirconate type capacitor, and a breakdown voltage three times that of the conventional capacitor. Furthermore, according to Tables 1 and 2, the dissipation factor tans of the capacitor of the material indicated by composition No. 3 has little dependency on voltage. However, the composition described above has a slightly low insulation resistance. Furthermore, the color of the composition is vivid red, so that the palladium electrodes of the laminated ceramic chip capacitor can be observed through the dielectric layers. As a result, there is room for improvement. In order to eliminate the drawback described immediately above, a small amount of manganese dioxide (MnO2) is added to the composition which consists of 100 mol parts of BaTiO31 (2/3)(7+1 mol parts of CeO2 and 7+1 mol parts of TiO2. In this composition, the insulation resistance is further improved, and the brightness of the ceramic color is decreased so as not to allow the palladium electrodes to be readily seen through the dielectric layers, thus improving the product image of the capacitors. An example of an improved ceramic composition will be described in detail below: Example Barium carbonate (BaCO3) and titanium dioxide (TiO2) were mixed such that a ratio of Ba to Ti was 1.000+0.005 : 1. The resultant mixture was then calcined at a temperature of 1,100 to 1,1500C and was pulverized to obtain barium metatitanate (BaTiO3). A hundred mol parts of BaTiO3, (2/3) (?+l) mol parts of CeO3, and 7+1 mol parts of TiO2 were mixed together. Various amounts of MnO2 were added respectively, to the mixture of BaTiO3, CeO3 and TiO2. The binders were respectively added to the resultant compounds to form square plates, respectively. The square plates were then calcined at a temperature of 1,250 to 1,350 C. Thereafter, silver electrodes were formed on each of the calcined square dielectric plates to prepare capacitors. Figs. 3A to 3C are graphs for explaining the electrical characteristics of the resultant dielectric plates as functions of the amounts of MnO2 added to the respective composition described above. As may be apparent from Fig. 3A, the dielectric constant r tends to decrease gradually as an increasing amount in excess of 0.2 mol part of MnO2 is added to the composition. The dielectric loss angle tand s shown in Fig. 3B increases as an increasing amount in excess of 0.5 mol part of MnO2 is added to the composition. Furthermore, the insulation resistance IR shown in Fig. 3C increases proportionally as the amount of MnO2 added to the composition increases. It is noted that the dielectric plates described above are made of the composition indicated by composition No. 3 at a calcination temperature of 1,300 C. The dissipation factor tand and the insulation resistance IR are measured in the same manner as for Table 1. Laminated ceramic chip capacitors as shown in Fig. 2 were then prepared by using the composition which is indicated by composition No. 3 at a calcination temperature of 1,3000C and which has various amounts of MnO2 added thereto. Figs. 4A to 4C are graphs for explaining the electrical characteristics of the laminated ceramic chip capacitors as functions of the amount of MnO2 added to the composition, respectively. The hatched portions in Figs. 4A to 4C indicate portions at which the palladium electrodes can be seen through the dielectric layer of 35 pm thickness. As may be apparent from Figs. 4A to 4C, the electrical characteristics of the capacitors are influenced more greatly than those of the square dielectric plates. The dielectric constant e shown in Fig. 4A is greatly decreased as an increasing amount in excess of 0.2 mol part of MnO2 is added to the composition; the dielectric constant e is not substantially changed when the amount of MnO2 does not exceed 0.2 mol part. The insulation resistance IR shown in Fig. 4C is increased by about five times when the amount of MnO2 is 0.2 mol part, as compared with the capacitor which does not contain any MnO2 The dissipation factor tane shown in Fig. 4B increases as an increasing amount of MnO2 in excess of 0.3 mol part is added. When compositions indicated by composition Nos. 2 and 4 in Table 1 are used and NO. 3 except that calcined at a temperature of 1,300"C are used, it is found that the same effects can be obtained in the same manner as in the composition indicated by composition No. 3. The optimal amount of MnO2 falls within a range of 0.05 mol part to 0.2 mol part. When 0.05 mol part of MnO2 is added, the palladium electrodes may not be observed through the dielectric layers. Furthermore, addition of 0.2 mol part of MnO2 allows a state immediately prior to the abrupt decrease in the dielectric constant. The average grain size of the ceramic was 2 to 3 wm, and the average pore size was not more than 2 to 3 Pm. Any electrical characteristics other than the dielectric constant E , the dissipation factor tans, and the insulation resistance IR remain constant, independently of the addition of MnO2. In the above example, the barium titanate is prepared using barium carbonate and titanium dioxide. However, commercially available barium titanate may also be used. INDUSTRIAL APPLICABILITY As described above, the ceramic composition of the present invention has a ceramic microstructure in which a grain size is small, only a small number of pores is present, and a pore size is also small. Furthermore, the ceramic composition has a high dielectric constant, a high breakdown voltage, and little dependency on voltage. When a small amount of MnO2 is added, the insulation (dielectric) resistance is further improved. Furthermore, although the palladium electrodes can be seen through the dielectric layers without addition of MnO2, such a drawback can be eliminated by the addition of MnO2. Thus, the composition of the present invention has a great advantage as used in laminated ceramic chip capacitors for a variety of industrial applications.

Claims: WHAT IS CLAIMED IS: 1. A ceramic composition of a high dielectric constant, characterized in that said composition consists of 100 mol parts of barium metatitanate (BaTiO3), (2/3) (7+1) mol parts of cerium dioxide, and 7+1 mol parts of titanium dioxide (TiO2). 2. A ceramic composition. of a high dielectric constant, characterized in that 0.05 to 0.2 mol part of manganese dioxide (MnO2) is added to a composition which consists of 100 mol parts of barium metatitanate (BaTiO3), (2/3) (7+1) mol parts of cerium dioxide, and 7+1 mol parts of titanium dioxide (TiO2).

Inventors: IGUCHI, TAKASHI, ITAKURA, GEN, KURODA, TAKAYUKI, NAGASE, KANEOMI
Applicants: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
Application year: 1983
Main classification: C04B35
IPC codes: C04B35, H01G4