PROCESS FOR MAKING LASER HOST GARNET CRYSTAL MATERIAL FREE OF WATER AND HYDROXYL ION IMPURITIES

Abstract: A method of making laser host garnet material is pro­ vided by melting an oxide charge in garnet forming propor­ tions containing from about 1% to 8% by weight in the ag­ gregate of water and hydroxyl ion as impurities, character­ ised in that, prior to melting, said charge is heated in an am­ bient environment, containing less than about 10 ppm water and CO₂ in the aggregate, for a period of 10 to 20 hours at a temperature in the range of from about 1150 to 1350 °C.

Description: PROCESS FOR MAKING LASER HOST GARNER CRYSTAL MATERIAL FREE OF WATER AND HYDROXYL ION IMPURITIES This invention relates to laser host garnet crystal material, e.g., neodynium doped yttrium aluminum garnet, Nd:YAG crystal, for use in the manufacture of lasers. More particularly the present invention is directed to a process for making laser host garnet crystal material which is essentially free of water and hydroxyl ions. Nd:YAG crystal material is well known as a laser host garnet crystal material and is manufectured commercially using the well known Czochralski technique to provide elongate boules of Nd:YAG crystal from which laser rods are obtained using coring and polishing practices known to the art. The unicrystalline Nd:YAG boule is obtained by a practice which involves the induction melting of an oxide charge, i.e., Y203, Nd203 and Awl 203 in a container in proportions to provide Nd:YAG, e.g., in accordance with the following formulation: EMI1.1 With the mixture melted and the melt at a temperature in the range of 1945 to 19600C an Nd:YAG seed crystal is immersed, rotated and withdrawn to Npulln a boule of Nd:YAG from the melt. The ambient atmosphere during heating to melting is commonly dry nitrogen containing up to 1200 ppm 02. The boule obtained as above is subsequently cored and processed to obtain an Nd:YAG laser rod. Another well known commercial practice for making Nd:YAG crystal material follows the known Bridgman technique of solidifying the melt in a container under vacuum conditions to obtain an Nd:YAG crystal which is subsequently cored and processed by known techniques to obtain a laser rod. It is known in the art that Nd:YAG laser rods exhibit significantly less than theoretical lasing efficiency when such rods contain water and water-derived impurities, e.g., hydroxyl ions. U.S. Patent 4,315,032 - R. C. Pastor and D. P. Devor discloses a technique to effect removal of such impurities from manufactured Nd:YAG laser rods utilizing an atomic oxygen treatment of the manufactured laser rods. This practice involves the post-manufacture handling and processing of laser rods and since the water-derived impurities to be removed originate in the starting materials, it is considered that it would be of substantial advantage to eliminate such impurities prior to laser rod manufacture. In the past it has been assume that the-water in the commercial grade oxides, i.e., Nd 2O3r Y203 and A1203, used in the starting mixture (ranging from about 1 to 8 > by weight in the aggregate) would be essentially completely driven-off in the course of raising the temperature of the mixture to the melting temperature, e.g., 19500C over a period of one to two hours. It is now known that in spite of such thermal history, an amount of water-derived impurities, e.g., hydroxyl ions, is retained in the Nd:YAG crystal which is sufficient to significantly reduce the lasing efficiency of a laser manufactured from such crystal. It is therefore an object o the present invention to provide a process for making essentially water-free and hydroxyl ion-free laser host garnet crystal material.- Other objects will be apparent from the following description and claims. A method in accordance with the present invention for making essentially water-free, hydroxyl ion-free and C02-free laser host garnet material comprises: (i) prdviding an ambient atmosphere containing less than 10 ppm in the aggregate of water and CO2; (ii) heating in such atmosphere in a receptacle a charge of oxides in garnet forming proportions, said charge prior to heating containing up to 8% by weight in the aggregate of water and CO2, the heating being such that the charge is at a temperature in the range of about 1150 to 13500C for from about 10 to 20 hours; (iii) thereafter increasing the heating of said charge in such ambient atmosphere to provide a temperature sufficient to provide a melt of said charge; (iv) forming from the melted charge a laser host garnet crystal; and (v) cooling said laser host garnet crystal to room temperature. In the practice of a particular embodiment the present invention for the making ot Nd:YAG laser host material, separate portions of Nd203, and Y203 commercial grade powders, and Awl 203 "crackle" (i.e., sapphire) are analyzed to determine the water impurity content (i.e., water + hydroxyl ion) and CO2 content of the respective materials. Customary ranges for water impurity are as follows: Nd203 0.8 to 8% by weight Y203 0.5 to 0.7% by weight A1203* nil sapphire fragments ("crackle") Material from the respective separate proportions are then combined (on a water-free and CO2-free basis) as a charge for the making of Nd:YAG crystal material. The aggregate water impurity in the charge commonly ranges from 1 to 8% by weight. The proportions of the charge are based on the following well known stoichiometry: EMI4.1 The charge is placed in a suitable receptacle, i.e., an iridium crucible, which is positioned in a suitable enclosure, e.g., a "bell jar", within which an ambient atmosphere containing less than about 10 "ppm of water + CO2 is established. When the Czochralski technique is used the above-noted ambient environment prior to melting of the charge is suitably nitrogen containing about 225 to 1000 -ppm O2 and less than 10 ppm H2O + CO2, and heating means, e.g., an induction coil are provided to heat the charge in the crucible to a temperature in the range of 1150 to 13500C for from about 10 to 20 hours in the above-noted ambient environment'. In the course of this heating period the water impurities and CO2 are essentially removed from the charge. The preferred heating period is about 12 hours; for heating periods of less than 10 hours the water impurities removal is of marginal improvement if at all. Heating periods longer than 20 hours are not considered to provide any further advantage. Following the heating period the temperature of the charge is increased to 1940 to 19660C to melt the charge while maintaining an ambient environment containing less than 10ppm of H2 0. In practicing the Czochralski technique a Nd:YAG seed rod is immersed in the melt and rotated and progressively raised to "pull" a boule of Nd:YAG crystal from the melt, all the while maintaining an ambient atmosphere environment containing less than 10 ppm of H20. The boule thus obtained is suitably cooled and thereafter processed to a laser rod using known techniques. It has been found, in accordance with the present invention, that laser rods formed from NdrYAG crystal prepared as above-described exhibit a ten-fold decrease in water impurity content e.g. to about 1 ppm or less, and also exhibit substantially enhanced lasing efficiency, as compared to Nd:YAG crystal material prepared as above, but without a ten to twenty hour heating period at 1100 to 13500C prior to melting. The following example will further illustrate the present invention. EXAFIPLE A charge was prepared from commercial grade Nod2 0 and Y203 powders and A1203 crackle. The water impurity content of the above materials was determined to be Nod 203 1.18 z by weight 2 3 0.8 e by weight Al 203 nil A charge was prepared as follows: Y203 2101.79 grams Nd203 174.23 grams Al203 1659.57 grams The materials were charged to an iridium crucible located in a "bell jar" which was sealed against atmospheric leaks. A flow (40 CFM) of nitrogen with 800 ppm 2 and less than 10 ppm H20 and C02 was used as the ambient atmosphere within the "bell jar". An induction coil was used to heat the change over a period? of 2 hours from room temperature to a temperature in the range of 1235 to 1320 which was maintained for twelve hours. At the end of the twelve hour period the temperature raised over a period of 5 hours to 1950 OC and the charge was melted. A Nd:YAG seed crystal mounted on a rotatable rod was lowered into the melt, rotated at 15 rpm and raised over a period of 46.5 hours to obtain a boule of Nd:YAG crystal 1 1/2 inch diameter and 7 inches length. A laser rod, 1/4 inch diameter, 3 inches in length, was manufactured from the boule. The laser rod was analyzed by infra red spectroscopy techniques and water impurity in trace amounts was found which was less than 1/10 of the water impurity content of a laser rod obtained in -the same manner except for the heating period prior to melting noted above. The quartum efficiency of the laser rod produced in this example was found to be 93.2% of theoretical lasing efficiency (0.88 at 0.9no) as compared to 76% of theoretical lasing efficiency for a rod prepared in the same manner except for the heating period prior to melting noted above. While the foregoing description has been particularly directed to Czrochalski technique for making Nd:YAG crystal material the present invention is applicable to Bridgman type processes which employ vacuum techniques to establish the ambient environment. Also the well known laser host garnet crystal materials such as the following can be processed by the pre-melting heat treatment of oxides in accordance with the present invention: YAG:Er YSc2 A13 012 Nd, Cr Gd3 Sc2 A13 012 Nd and/or Cr Gd3 Sc2 Ga3 12 Cr

Claims: CLAIMS. 1. A method. for making laser host garnet crystal material by melting an oxide charge in garnet forming proportions containing from about 1 to 8, by weight in the aggregate of water and hydroxyl ion as impurities, characterised in that, prior to melting said charge is heated in an ambient environment, containing less than about 10 ppm water and C02 in the aggregate, for a period of 10 to 20 hours at a temperature in the range of from about 11500C to 13500C. 2. A method as claimed in claim 1 characterised in that said ambient environment is nitrogen containing up to 1000 ppm 2 and less than 10 ppm HyO+c02. 3. A method as claimed in claim 1 or 2 characterised in that said laser host garnet crystal material is selected from the group consisting of: N:YAG YAG:Er YSc2 A13 012 Nd, Cr Gd3 Se2 A13 012 Nd and/or Cr Gd3-Sc2 Ga3 012, Cr.

Inventors: DE LOZIER, BEN A., KOKTA, MILAN R.
Applicants: UNION CARBIDE CORPORATION
Application year: 1983
Main classification: C30B29
IPC codes: C30B29, C30B15, H01S3