APPARATUS FOR PROCESSING OF SUBSTRATES

Abstract: Improved apparatus (10), including passage (22) for inter-cushion processing and transport of substrates (12) towards and from process modules (14) and (16) for main processing of said substrates (12) at non-atmospheric pressure in a series of successive process chambers (64), located in between successive processors/transporters (66), in which secundary processing and transport of said substrates (12) take place.

Description: Apparatus for Processing of Substrates In the Dutch Patent Applications No's 8 103 979 and 8 200 753 of th applicant a transport system for substrates is disclosed, ωhereby these substrates are fed through a centrally positioned passage of a cabin and in that passage aside the substrate at least locally flows of medium esta- blish a floating transport of these substrates with at least almost no me¬ chanic contact thereof ωith cabin components. The apparatus according to the invention shoωs some improvements for the transport system toωards and from in particular modules, in ωhich com¬ plicated processings under high vacuum takes place and is mainly characte¬ rized by including means to at least locally establish an independent transport of the substrates by means of floωs of medium, moving along the¬ se substrates. A folloωing positive characteristic is thereby, that such a medium, fed towards such substrates, is splitted up in a main floω in direction of substrate movement toωards a discharge and a secundairy floω, moving in op posite direction towards another discharge and such uith a loωer speed. Consequently, the resulting thrust of these floωs on the substrate is in the direction of substrate movement. Furthermore, the difference in speed of the floωs is obtained by, as seen in direction of movement of the substrates, different ωidths of the transporter segments ωith the smallest ωidth in direction of substrate mo¬ vement. The substrate might be a tape, ωhich during the processing is inde— pently fed through the apparatus. Therefor, the text of this application is also applicable for such tapes. The substrates have tolerances in thickness, flatness, roughness and bou. Consequently, ωith a constant ωidth of the passage, both gap ωidths in bεtωeen the substrates and the passage-ωall sections of the transporter segments vary, resulting in a variable floω speed of the medium, a variable thrust of the medium on the substrates and consequently a variable speed of the substrates. The apparatus is πoω characterized, that in direction of substrate movement in bet een the segment packages free areas are located far the positioning of sensors for regulation of the medium pressure in the passa¬ ge in dependence on the quality of these substrates and the type of pro— cessing. In the apparatus modules can be located, in ωhich micro-ωave oven drying, metallisation, plasma etching, plasma stripping, plasma developing, ■< xE OMPI ion implantation, oxidation, doping and other complicated processings take place in chambers in between transporters and such often together ωith a high vacuum. Thereby the taking over of the substrates by a transport sys¬ tem, which is part of such modules. A very positive characteristic is now, that in direction of substra¬ te movement the length of such chambers in between successive segment pack¬ ages is that smaller than the length of the substrates, that the passage, located behind such chamber, provides a sufficient guidance for the sub¬ strates to correctly enter the passage in front of that chamber. In particular "high current" ion implantation and micro-ωave oven drying require a relatively long lasting processing. A following characteristic is now, that in direction of substrate movement a number of successive chambers with the same type of processing are used, ωith in between segment packages and such packages are provided ωith a central passage for such substrates. Due to the extremely low weight of the substrates per square inch, the pressure in the passages between successive module chambers can be ve¬ ry low and locally even near the high vacuum, as used for such type of processing. Furthermore, in such a passage the same gaseous medium can be used as is required for this processing. Also, the module cabin can be used as a common, wide discharge channel. Furthermore, until now ωith high vacuum modules the supply and dis¬ charge αf substrates are established by means of mechanic transport sys¬ tems or cassettes of substrates are brought into these modules. Thereby in particular a loss of time, ωhich is due to the reduction of the atmospheric pressure to high vacuum and such ωether or not through a load lock. A folloωing very positive characteristic is noω, that in the supply section of the transport system toωards such a module the pressure of suc¬ cessive floωs of medium drops at least per group of such floωs toωards at least close to the high vacuum. Furthermore, that in the discharge section of such a module the pres sure increases upwardly from at least close to this high vacuum and such at least per group of successive flows of medium. Thereby the many succes¬ sive floωs of medium in the direction of substrate movement establish by means of numerous micro thrusts on such a substrate a displacement thereof against the increasing pressure. Furthermore, it is of importance, that the speed of the processing and consequently of the substrates during such processings remains as uni¬ form as possible. OMPI A following very positive characteristic of the apparatus is now, that thereby in front of and behind a series of module chambers ωith the same type of processing the transporters are the same as those, used in the module, ωith at least almost the same type of transport medium. Furthermore, that thereby the length of such an arrangement of transporters is larger than half the length of the substrates. As in between successive module sections ωith the same type of pro¬ cessing transporters are used, such a quantity of cooling medium can be fed into such transporters and discharged therefrom, that during the pro- cessing the temperature of the substrates remains beloω an acceptable va¬ lue. Further positive characteristics of the apparatus folloω from the description of the following Figures: Figure 1 shows in a simplified configuration the apparatus accαr— ding to the invention, including several process modules-. Figure 2 shows the apparatus according to Figure 1 in a more de¬ tailed form. Figure 3 is an enlarged detail of the transport system in a module of the apparatus according to Figure 1. Figure 4 is a cross—section of the apparatus according to Figure 1 over the transporters, positioned therein. Figure 5 is a side vieω of a section of the segment package of the transporters. Figure 6 is a cross—section over the line 6-6 of the segments ac- cording to Figure 5. Figure 7 is a cross-section of the apparatus over a process chamber of a module. Figure 8 is in part a longitudinal section of the apparatus accor¬ ding to Figure 1 at the location of a series of process chambers. Figure 9 is a longitudinal section of the apparatus according to Figure 1 at the location of micro—ωave oven modules. Figure 10 shoωs a process module for plasma etching. Figure 11 is another module for such a plasma etching. Figure 12 is a longitudinal section of the apparatus at the location of a series of process chambers of a module for ion implantation. Figure 13 is a cross—section over the line 13—13 of such a module. In Figure 1 apparatus 10 for processing of substrates 12 is shoωn. These substrates can also be a tape. In this apparatus use is made of the process modules 14 and 16, and OMP whereby by means of take-over device 20 the substrates 12 are transported from cassette 18 towards passage 22 of the transport section 24 for these modules. Thereafter a displacement of the substrates takes place by means of flows of medium, which is fed from segment packages 26 into the passage 22 and urgedalong these substrates 12, see also Figure 3. In this cabin section 24 in the successive stations 28, 30, 32 and 34 also successively cleaning, drying, rinsing and again drying takes pla¬ ce. Thereby for this and other simple continuous processing the possible use of the process systems, as described in the Dutch Patent Applications No's 8103 979 and 8 200 753 of the Applicant. In Figure 3 is shown, how also in or near these simple stations a transport of the substrates takes place by means of whether or not process medium. Through supply channels 36 the medium 38 is urged toωards the passa¬ ge gaps 40 and 42 aside the substrates and whereby a discharge of such me¬ dium takes place through discharge channels 44. The segment 46 has a larger width as segment 48, with consequently a larger flow restriction in gap 50 as in gap 52. As a result, in gap 52 the speed of the medium and therewith the force, applied on t e substrate, is larger than that in gap 50 with a resulting force on the substrate in the direction of movement thereof. Due to the numerous floωs of medium through successive series of channels a displacement of the substrates is established. In the module 14 processing under high vacuum takes place. For that purpose in transport section 54 in successive segment packages 56, 58, 60 and 62 gradually a drop in pressure of the transport medium occurs from near atmospheric pressure to near this high vacuum. Thereby use is made of supply— and discharge channels per package, wherein the pressure reduces per package. By means of a gradual increase of the flow restriction for the medium in the channels, located in such a package, the pressure in the gaps aside the substrates can also drop gradually. The substrates are continuously fed through the module 14 with the maintaining of almost the same speed. This module 14 consists of a great number of module chambers 64 with the transporters 66 positioned in between. Thereby these transporters 66 establish the displacement of the substrates through the module, whereby in the module chambers process medium is urged toωards such a substrate. The structure of these transporters 66 is for instance shoωn in Figures 3 and 9. Thereby at least the first segments of the package are inclined to enable a correct entering of the substrates. The length of the module chambers in between these packages is kept that small, that such a package provides sufficient guidance to the substa— te to pass through the following segment package without mechanical con— tact. For a proper, even processing in this module 14 it is required, that the speed of the substrates through this module is constant, without the affecting thereof by the common, almost circular shape of the substrates. Therefor in the apparatus in front of this module 14 and behind it the respective transport stations 70 and 72 are located, in ωhich the condi¬ tions of transport of the substrates are at least almost the same as those in the module. Thereby these stations can be provided ωith approximately the same segment packages 66 and the same areas 64 in between. In cabin section 80, positioned in front of this module, still one or more simple basic processings can take place, after which the substra¬ tes by means of the take-over device 82 are transported towards cassette 84. In Figures 4 through 9 the structure of apparatus 10 is disclosed. Thereby use is made of two bearers 86 and 88. In between these bearers successive segment packages 66 as transporters for the substrates are po— titioned, ωith the creation of passage 22. The notches 90 of segments 92, see also Figure 6, rest in the corresponding grooves 94, positioned in the bearers 86 and 88, ωith a resulting precise ωidth of the passage 22 for the substrates. In segments 92 the main channel 96 is located, whereby a great num¬ ber of branched channels 98 are connected thereωith. The ends 100 of these channels are in open connection ωith passage 22. In these channels 98 as supply channels the flow restriction for the medium is considerably larger than the restriction of the gap sections of the passage aside the substrate. Consequently, also with a locally not being present of a substrate the flow of medium in the passage remains very limited. By means of the mounting holes 102, located in these segments, and through which mounting means can be passed, a stacking of the segments is obtained under the creation of package 66. The supply- and discharge channels are approximately the same. The¬ reby the entrances 104 of the supply channels are connected with the groo¬ ves 106 and 108, located in bearer 86, whereas these grooves, whether or not per package, through supply channels 110 are connected with a not ( OMPI shown discharge line. Covers 120 and 122, whether or not used per segment package, inner connect both bearers 86 and 88 with simultaneously the enclosing of such package. For that purpose the bolt connections 124 and 126 are used. In Figure 7 the apparatus 10 is shown in a cross-section of the process module 64. Thereby the distance between the bearers is to a small extent enlarged. The upper cover 128 is provided with the wall sections 130 and 132, located at the inside of the bearers, whereas on the upper wall 134 thereof the cabin top 136 is mounted. The lower cover 138 can be the same as the upper cover, if on both sides of the substrate the same processing takes place. If however only in the top section processing occurs, then the cover 138 is provided ωith the bottom 140. Both covers can be made of a material, ωhich is suitable for the processing, such as for a micro-wave oven material, ωhich is micro-wave damping and for plasma etching an electric insulation material. Further¬ more, such a cover 128 can contain inner walls 142, through which the pro¬ cess chambers 64 are isolated. In Figure 9 the process module 14 is shown in a more detailed con- figuration. Thereby both covers 120' and 122' of the segment packages 66' also contain the side walls 142* for the mudule chamber 64'. The process module 14, as is shown in Figures 1 and 2, can be an oven, whereby in sections 144 thereof a generator of the micro-waves are located. These micro—waves move from these two generators through chamber 64 as module sections toωards the substrates. For this oven use can be made of micro-wave absorbent material to prevent as much as possible a heating of module components and in particu¬ lar of the segment packages. Thereby, dependent on the type of oven and transport speed of the substrates the number of chambers 64 can vary bet- ween a single one for simple processing and ten or more for complicated ovens for de-hydration, ωith a total process time of 10 - 20 seconds. In such generator sections 144 any other type of generator of pro— cess medium can be positioned. In Figure 10 a plasma etch module 146 is shown in a simplified form, whereby through passage 148 gas is supplied and in section 150 plasma is generated, which under a high speed by means of electrode arrangements 152 and 154 is directed towards substrate 12. A discharge of gases takes place through passage 156. In Figure 11 another plasma etch module 146' is shown, whereby the f OM generation of the plasma takes place outside in chamber 158 and the plasma under high speed is fed to the successive module chambers. Thereby through passage 160 a discharge of gases occurs. In these designs on behalf of the processing the modules can coπ- tain any type of scanning, such as magnetic, electro—static and even me¬ chanic. Furthermore, during the processing the substrates 12 can make con¬ tact with electrode 154 and can, together ωith these electrodes, be connec¬ ted ωith a grounding means of the module. In Figure 12 the module 162 for ion implantation is shoωn, ωhereby from generator 164 an ion beam through divider 166 and a common scanning section 168 is fed, ωhereafter five splitted beams are fed to the module chambers. Here also, each type of scanning for divider 166 and section 168 is possible. Furthermore, a supplementary scanning is applicable. Also, such module can contain any type of electric insulation, as required. Furthermore, as tωo generators 164 are shoωn, within the scope of the invention this number can vary between a single generator for all mo¬ dule chambers together and one generator per module chamber. The module can also function as an etcher ωith the etching of the substrate surface by means of these ions. Furthermore, on behalf of the processing electrodes can be located in the module and the substrates can be electrically charged or grounded. In another configuration of the process modules metallisation of the substrate surface can take place. Furthermore, ωithiπ the scope of the invention all other types of processing are applicable, as for instance modules for doping, oxidation of the substrate surface, modules to urge developing medium toωards the substrates to develop the photo sensitive coating layer, applied thereon, modules for stripping of such layer and electron beam processing systems. Also, by means of media, flowing through these segment packages, an in between cooling of the substrates can take place and to such extent, that during the processing the temperature of the substrate cannot rise too high. Thereby an efficient use can be made of the transportmedium as coo¬ ling agent, as is shown in Figure 4. Furthermore, in the apparatus 10 sensors 172 are located as a means for regulation of the transport speed of the substrates and with the use of the free areas in between successive segment packages, see Figures 8 and 12. Furthermore, in these areas or somewhere else in the apparatus, in¬ struments for measuring and testing and sensors to control the processing r can be located. As is shoωn, the substrates move through the apparatus separately from each other, ωith some distance in between. However, it is also possi¬ ble, that these substrates join each other in direction of substrate move— meπt. Furthermore, a supply station can be part of a processing module, and wherein a take-over device transports the supplied substrates towards a position in this module for processing. A second take-over device dis¬ charges these substrates to a receiving discharge station. Thereby a number of substrates can be brought to this processing position, whereby proces¬ sing of these substrates takes place simultaneously. Figures 13 and 14 shoω in detail a part of the transport system of a module, ωith an one-sided processing of the substrates, passing through. In such a module processing under an extremely high vacuum, as for instaπ— ce lower than 1 x 10 *" torr takes place, whereby during certain types of processing, such as ion implantation and ion etching or ion milling to a great extent heat is supplied to the substrates. However, by means of the gaseous medium, flowing through the seg¬ ments and such eventually supplemented by cooling of these segments by such or another medium, a sufficient in between cooling of these substrates can be maintained. In cover 174 the passage 176 is located, through which the process medium and/or beams are directed toωards substrates 12". The cover extends toωards close to the substrate passage and whereby this passage is that smaller than that of chamber 178, that also with no substrate, being pre¬ sent, still a sufficient screening—off of the segment packages take place. Such also because of the possible use of electrodes 180, located under¬ neath chamber 178, whereby process-medium, ωhich is passed through this this chamber is attracted thereon. Furthermore, also in the chamber 178 aside the segment packages cover plates can be positioned. The supply of the transport gases takes place through supply chan¬ nel 36", ωith a vacuum pressure of for instance 1 torr as supply pressure. Thereby the floating of the substrates in the passage ωith the establishing of the gaps 40" and 42" is obtained by means of a loωer supply pressure for the upper channels 36" or the including of a larger floω restriction in these upper channels. Gaseous transport medium is discharged from the gaps 40" through discharge channels 182 between the cover 174 and the upper segment package 66", cabin passage 184 aside the substrates 12" and chamber 178 towards the cabin compartment 186. Thereby a high vacuum pump is connected ωith this compartment. Furthermore, an immediate discharge of the transport gases from gap 42" takes place through the chamber 178. Eventually, here also a cover can be used with discharge channels in between this cover and the lower packa¬ ges. The consumption of transport gas, which is also used for the pro¬ cessing, is very restricted. Consequently, with no substrate present in the process area 188, these gases can still sufficiently be discharged by the vacuum pumps. The segment packages and the process chambers in between might have a length of approximately 3 mm in the direction of substrate movement. Consequently, per module the number of packages can be very large and such dependent on the type of processing. Thereby an ideal in between cooling of the substrates can be maintained. Within the scope of the invention other configurations of the modu¬ les are possible.

Claims: C L A I M S 1. Apparatus for floating transport and processing of substrates and tape, including: in a cabin a central passage for said substrates; successive processors, also functioning as transporters, loca¬ ted aside said passage and provided with a segment package to supply media toωards and from said passage for an inter-cus¬ hion processing and transport of said substrates; the structure of said processors executed such, that in direc— tion of substrate movement successive supply— and discharge channels are arranged; . a module for main processing ofsaid substrates/tape under non- atmospheric pressure; and means for a floating transport of said substrates/tape toωards and from said module. 2. Method of said apparatus according to Claim 1 , wherein in sec¬ tions of said passage as part of the processing at least the pressure of said medium changes in the direction toωards and from said module and such combined with an inter-cushion transport of said substrates. 3. Method according to Claim 2, wherein said change of pressure of said flows of medium takes place gradually. 4. Method according to Claim 2, wherein said change of pressure takes place in successive groups of flows of medium. 5. Method according to Claim 2, wherein in the supply station for said module, in which main processing under vacuum takes place, in direc¬ tion of substrate movement the supply pressure for said flows of medium drops tα near the vacuum in said module. 6. Method according to Claim 5, wherein in said discharge station of said module in direction of substrate movement the supply pressure for said flows of medium increases from near vacuum in this module towards the following higher pressure, wanted. 7. Apparatus according to Claim 1 , wherein said apparatus contains means to feed substrates from a send cassette towards said passage and to discharge said substrates from said passage into a receiver cassette. 8, Supply station as part of said apparatus according to Claim 1 , wherein said station contains a cleaning— and a drying section on both sides of said passage and said processing takes place by means of successi¬ ve flows of processing medium in said passage aside said substrates. 9. Apparatus according to one of foregoing Claims, wherein at the location of said process module, in which main processing of said substra¬ tes takes place, said passage is interrupted over some distance with the creation of a process chamber in between processors/transporters, provi— ding secundary processings and a floating guidance for said substrates. 10. Apparatus according to Claim 9, wherein in direction of sub¬ strate movement the length of said process chamber is that smaller than the length of said substrates in said direction of substrate movement, that the processor behind said chamber provides sufficient floating guidance for said substrates to enable an inlet of said substrates in the processor passage in front of said chamber. 11. Apparatus according to Claim 9, wherein in direction of move¬ ment of said substrates at least two modules with the same type of proces¬ sing are located ωith successive process chambers in between processors, in which secundary processings and a floating guidance of said substrates take place. 12. Apparatus according to Claim 11, wherein said number of process chambers is such, that per process chamber the allowable temperature for said substrates is not surpassed. 13. Apparatus according to one of foregoing Claims, wherein in late¬ ral direction of said apparatus the ωidth of said process chamber is larger than the width of said passage in said processors. 14. Apparatus according to one of foregoing Claims, wherein in di¬ rection of substrate movement on at least one side of said passage in be— tween said processors free areas are located for at least positioning of sensors on behalf of said main processing of said substrates. 15. Method of the apparatus according to Claim 14, wherein during the transport of said substrates in said passage at least locally succes¬ sive substrates are separated from each other over some distance. 16. Apparatus according to one of foregoing Claims, wherein at the location of said process module at least part of the processors aside said process chambers is made of electric insulating material. 17. Apparatus according to one of foregoing Claims, wherein said apparatus is executed such, that ωith successive process chambers ωith the same main processing at least the processing/transport medium in said pro¬ cessors has a loωer temperature than that of the surface of said substrates, leaving said mcdule chambers. 18. Method of said apparatus according to Claim 17, wherein, as in said process chamber the temperature of said substrate has risssπ to near OMPI the maximum allowable teπpεrature of the coating, applied on said substra¬ te, in said processor Dy means of said medium a cooling of said substrate surface is accomplished to such extent, that ωith the main processing in the following process chamber the temperature again cannot rise above said maximum alloωable temperature. 19. Apparatus according to one of foregoing Claims, wherein in at least one processor channels are located for passing through of cooling medium. 20. Apparatus according to Claim 19, wherein said cooling medium is the same as said processing/transport medium in said processor. 21. Apparatus according to Claim 20, wherein a main supply channel, located in said processor, at one end thereof through branched channels is connected with said substrate passage and at the other end through a nar¬ row channel is connected with a supply source. 22. Apparatus according to one of foregoing Claims, wherein said process chambers ωith the same type of processing are connected ωith at least one source, ωhich at least partly provides the processing media. 23. Apparatus according to Claim 22, ωhereiπ in between said source and said passage such a beam divider is located, that through said divider at least tωo beams are directed toωards said passage for said substrates and said beams in direction of movement of said substrates are located be¬ hind each other and debouch into successive process chambers. 24. Method of said apparatus according to Claim 23, wherein said beams are fed through electrostatic or magnetic scanning means to obtain flat beams uith a ωidth in direction of movement of said substrates, ωhich is smaller than the length of said process chambers- in said direction of substrate movement. 25. Apparatus according to one of foregoing Claims, wherein said source is a generator of micro ωaves for heating said substrates. 26. Apparatus according to Claim 25, wherein at least locally the cover of said processors is made of micro-wave absorbent material and said cover is executed such, that therein only openings are provided for pas¬ sing through of said micro waves from the generator towards said process chambers in between said processors. 27. Apparatus according to one of foregoing Claims, wherein said source is an ion generator for ion implantation in said substrates. 28. Apparatus according to one of foregoing Claims, wherein said source is an ion generator for etching of substrates. 29. Apparatus according to one of foregoing Claims, wherein said source also includes a target for metallisation of said substrate surface. 3G. Apparatus according to one of foregoing Claims, wherein said pro¬ cess chambers with the same type of processing also contain means for do¬ ping of said substrate surface. 31. Apparatus according to one of foregoing Claims, wherein a series of process chambers are executed such, that therein oxidation of said sub¬ strate surface can take place. 32. Apparatus according to one of foregoing Claims, wherein if. is executed such, that or, behalf of said processing at the location of said module chambers said substrates are electrically charged. 33. Apparatus according to Claim. 2,. wherein it is executed such, that thereby at least the processor sections aside said process chambers are electrically charged the same, with in said process chambers opposite¬ ly charged shields aside said processors, extending towards at least near said substrate passage. 34. Apparatus according to one cf foregoing Claims, wherein at the non-processing side of said passage at least near said process chambers an electrode is located. 35. Apparatus according to Claim 3 ' 4 f wherein said electrode has at least approximately the same ωidth as that of said substrates. 36. Apparatus according to Claim 35, wherein said electrode has a length in direction of substrate movement, which at least corresponds with that of said passage area of said process chamber in said direction of substrate movement. 37. Apparatus according to Claim 35, wherein said electrode is elec¬ trically connected ωith the grounding means of said apparatus. 38. Apparatus according to one of foregoing Claims, ωherein two bea¬ rers extend aside said passage in direction of substrate movement, in be— ween said bearers said processors/transporters are located and covers connect said bearers with each other in such a way, that said covers also enclose said processors in cross direction of said apparatus. 39. Apparatus according to one of foregoing Claims, wherein at least at the processing side said cover extends as walls aside said processors towards close to the imaginary extension of said passage in said proces— sors and the ends thereof are part of said passage for said substrates. 40. Apparatus according to one of foregoing Claims, ωherein in each of the two sections of said procsssors aside said passage a main channel is located, this channel through a great number of branched channels, po¬ sitioned in at least one segment, is connected with said passage, for at OMPI - ~ ά *~ leasr. the supply cnanr.els for medium in said branched channels a narrowing as flow restriction for said meαiurπ is located and said main supply chan¬ nels debouch into a common channel in one of said bearers. 41.. Apparatus according to Claim 40, wherein in said two sections of said processors discharge channels for said medium are connected ωith a discharge channel in the other bearer. 42 • Apparatus according to one of foregoing Claims, ωherein said apparatus is executed such, that in at least one of said process chambers on both sides of said substrates the same processing takes place. 43. Apparatus according to one of foregoing Claims, wherein compo¬ nents and assemblies are incorporated of apparatus, as described in the P T Patent Applications No's PCT/NL 82/00027 and PCT/NL 83/00006 of the Applicant. 44. Method of said apparatus according to one of foregoing Claims, wherein use is made of at least one of the methods, as described in the C T Patent Applications No's PCT/NL 82/00027 and PCT/NL 83/00006 of the Applicant. 45. Apparatus according to one of foregoing Claims, wherein the structure of said module is such, that during the processing in said pro— cessors at least at the location of the outlets of said supply channels in said passage the pressure of the medium in said gap underneath said sub¬ strates is higher than that in said gap above said substrates. 46- Method of the apparatus according to Claim 45, ωherein, as in said module ion implantation or other processing by means of ion beams takes place with a process pressure in said process compartment, ωhich is not -4 larger than 10 torr, during the processing in said process chambers imme¬ diately adjacent to said substrates the average pressure is higher. 47« Apparatus according to one of foregoing Claims, ωherein in said processors on at least the processing side the inlets of said high vacuum discharge channels, as seen in direction of movement of said substrates, are the ends of said passage. 48. εthcd of said apparatus according to Claim 47, wherein during the processing said cabin of said module also functions as main discharge channel for gaseous medium, supplied therein from said substrate passages in said processors. 49» Metho according to Claim 4a, ωherein during the processing the transport/processing medium at the processing side moves in downward direc¬ tion from saic process chambers through said module compartment underneath and is εuctiαrad therefrom, by means of a high vacuum pump. OMP 50. Apparatus according to Claim 39 , luharsin said cover is executed such, that the sidεuall sections thereof also shield off the sidewalls of said casin aside said process chambers, said sidεωall sections also extend towards near said suDStratε psssags and all four sidewall sections tcgethεr form a tube. 51. Apparatus according to Claim 50, wharεiπ it is exεcuted such, that by means of said covers the processing side of said module only through said tubes is in open connection ωith the module compartment at the non-processing sida thereof. 52. Apparatus according tc Claim 50, wherein in lateral direction of said module thε distance bεtwεen said sidewalls of said cabin at thε lo¬ cation of said procεss chambers and processors is considerably larger than the ωidth of said substrates and aside the imaginary extension of said substrate passage of said processors at least one communication compart— meπt is located, connecting said processing side of said module uith said non-processing side of said module. 53. Apparatus according to Claim 52, wherein in said processors at the processing side of said substrata passage high vacuum discharge chan¬ nels are located in between said processors and said covers, corresponding therewith, and said channels are in open connection ωith said communication compartment. 54. Apparatus according to Claim 53, ωherein said module is executed such, that said communication compartment is connected with at least one central discharge toωards a high vacuum pump. 55. Apparatus according to one of foregoing Claims, wherein in the processing compartment of said module in direction of substrate movement a number of cathodes are located for metallisation of said substrates and said cathodes have a width, which is at least the same as that of said substrates. 56. Apparatus according to one of foregoing Claims, ωherein in said processing compartment at least one target as supplier of rnatsrial for said substrates is located. 57. Method according to one of foregoing Claims, ωherein at least in said processors said processing/transport medium is the same as one of the process media, used in the process module. 58. Substrate, on ωhich at least the processing according to one of foregoing Claims is applicable. 59. Tape, on which at least the processing .according to one of fore¬ going Clairr.s is applicable. OMPI

Inventors: BOK EDWARD, BOK, EDWARD
Applicants: BOK EDWARD, BOK, EDWARD
Application year: 1983
Main classification: H05K13
IPC codes: B65G51, H01L21, H05K13