TEMPERATURE CONTROLLED CRYSTAL OSCILLATOR

Abstract: A temperature compensated crystal oscillator in which the base emitter voltage of transistors in an integrated circuit is used to provide substantially linearly temperature sensitive outputs which are employed to generate a series of polyno­ mial functions of Chebyshev-like form which are summed and used to control a varicap diode in the oscillator feedback path.

Description: TEMPERATURE CONTROLLED CRYSTAL OSCILLATOR The present invention relates to temperature compensated crystal oscillators. Crystal oscillators are widely employed in electronic equipment, usually in situations where a precise frequency of oscillation is required. However the natural resonant frequency of a crystal is a function of temperature, and for some applications the operating range of temperature is so great, having regard to the frequency stability requirements, that special measures have to be taken to reduce the effects of temperature variations upon the operating frequency of the oscillator. This reduction -can be achieved by maintaining the crystal at a constant temperature in a temperature controlled oven, but this requires a relatively large amount of space, and involves the consumption of a relatively large amount of power. This is the approach used in the oven controlled crystal oscillator (OCXO). In a temperature compensated crystal oscillator (TCXO) an alternative approach to obtaining the required reduction in temperature sensitivity is obtained by the use of a variable reactance element in the feedback path of the oscillator to 'pull' the forced resonant frequency of the oscillator in such a way as to compensate the changes that would otherwise result from the changes in the natural resonant frequency of the crystal. Typically the variable reactance element of a TCXO is a varicap diode whose reactance is controlled by altering the d.c. voltage applied across its terminals. Various methods have been proposed for generating the requisite compensation voltage for the varicap diode, but to provide a reasonable stability over the temperature range from -40 CC to +85 CC the method most commonly used to date is provided by a ladder network of three thermistors and five resistors. The values of the components in this ladder are chosen having regard to the particular temperature characteristic exhibited by the uncompensated crystal, and this varies from oscillator to oscillator because the variations between nominally identical crystals prove to be quite significant. As a result, compensation with this form of ladder network typically requires the selection of appropriate values of resistors from three decades of 1% accuracy E 96 series resistors (resistors having 96 preferred values per decade). The present invention is concerned with an alternative compensation voltage that does not require the use of the thermistor resistor ladder network, and which affords the possibility of being able to use lower accuracy resistors in a series having a fewer preferred values per decade. According to the present invention there is provided a temperature compensated crystal oscillator consisting of a crystal oscillator circuit and a temperature sensitive compensation circuit, characterised in that the crystal oscillator circuit has a frequency pulling control element connected in its frequency selective positive feedback path, wherein the temperature sensitive compensation circuit includes a temperature sensor whose output is connected to drive the control element via a power series function generator and a summing amplifier, wherein the temperature sensor is adapted to provide an electrical output f(t) that is a monotonically varying function of temperature, wherein the power series function generator is adapted to generate a series of outputs of which the nth output is a polynomial function in f(t) of order (n-l), and wherein the summing amplifier is adapted to provide a weighted sum of the power series function generator outputs, which sum is applied to the control element. There follows a further description of the background to the invention and a description of temperature compensated crystal oscillator embodying the invention in a preferred form. The description refers to the accompanying drawings in which : Figure 1 is a graph showing as a function of temperature the variation in resonant frequency of typical AT-cut quartz crystals cut at different angles, Figure 2 is a graph showing as a function of temperature the variation in magnitude of the required compensating voltage of a temperature compensated crystal oscillator, Figure 3 is a basic block diagram of a temperature controlled crystal oscillator according to the present invention, Figure 4 is a more detailed block diagram of the compensation network of the diagram of Figure 3, Figure 5 is a circuit diagram of the compensation network voltage regulator, Figures 6 and 7 are basic circuit diagrams of the two parts of the compensation network temperature sensor generating respectively negative and positive temperature coefficient currents, Figures 8 and 9 are circuit diagrams of the compensation network analogue multiplier and current-to-voltage converter elements respectively, Figure 10 is a circuit diagram showing the interconnection of the circuit elements of Figures 6, 7, 8 and 9, and Figure 11 is a diagram of the compensation network summing amplifier. It is usual to use an AT-cut crystal for a crystal oscillator, and the frequency temperature characteristics of typical AT-cut crystals are shown by curves A, B and C of Figure 1. These curves are predominately cubic, and the slope at the point of inflection, which typically occurs at about 250C, depends upon the angle of the cut. The compensating voltage is required to have a voltage/temperature characteristic V(T) having the general form depicted in Figure 2, which is substantially the mirror image of the frequency/temperature characteristic of the particular crystal being compensated. This characteristic curve V(T) of Figure 2 can be synthesised using the Weierstrass theorem by a power series of the form V(T)=Ao+Al(T-To)+A2(T-To) 2+A3(T-T,) 1 + + An (T-To where V(T) is the required compensating voltage T is the working temperature T is the inflection temperature, and 0 Ao,Al, A2 etc. are the summing coefficients. The error between V(T) and the required compensating voltage is in principle dependent upon the number of terms included in the power series. In practice it will also depend upon the precision with which the required summing coefficients can be realised. For this particular application the dominant summing coefficients are the linear and cubic terms, and so in general it will not be necessary to use more than the first four terms of the series. Having regard to the effects of errors, it is preferred not to generate the terms (T-T0) n directly, but instead to generate Chebyshev-like polynomials. Normalised Chebyshev polynomials have the useful property that the excursion over the temperature range of interest is minimised, and this reduces the effects of errors in their coefficients. Also, by choosing the appropriate angle of cut for the crystal to provide mininum excursion of the natural resonant frequency of the crystal over the required temperature range, V(T) approaches close to the third order Chebyshev polynomial C3(x) ^ 4x3 - 3x (where x = T - To) Cubic, and to a lesser extent linear terms, are particularly significant under these circumstances, and so the summing coefficients of the Chebyshev polynomials C3 and C1 need to be selected with reasonable accuracy, whereas those of the other terms can be selected with reduced proportional accuracy because their contribution to the summed signal is small. Furthermore, any unallowed for departure from true Chebyshev form in the generation of the Chebyshev-like polynomials will have a smaller effect upon errors in V(T) than corresponding errors used in generating a straight (T-T )n expansion since part of the summation of the polynomials to generate V(T) has already been done. Overall, by using Chebyshev-like polynomials (i.e. polynomials in which the excursion over the required temperature range is reduced close to a minimum) the accuracy to which the polynomials themselves are generated, and the accuracy to which their weighted sum is formed to provide V(T), can be reduced. The magnitudes of the individual summing coefficients required to be used to form the weighted sum are calculated by using a standard linear regression technique upon the measured values of the Chebyshev-like curves generated by the power series function generator and of the required V(T) at selected points in the required working temperature range. Figure 3 depicts a basic block diagram of the oscillator. The oscillator consists of an oscillator circuit and a temperature sensitive compensation circuit. The oscillator is provided by an amplifier 30 having a frequency selective positive feedback path incorporating a crystal 31 and a varicap diode 32. The temperature sensitive compensation circuit is provided by a networK JJ wnicn provioes a d.c. voltage output V(T) across the varicap diode that exhibits the appropriate function of temperature to force the frequency of oscillation in such a way as to hold it within required limits over the desired working temperature range. This compensation network is shown in greater detail in the block diagram of Figure 4. The preferred way of implementing the power series function generator and summing amplifier of the compensation network is by means of an integrated circuit. Under these circumstances it is clearly attractive to employ the same integrated circuit for the construction of the temperature sensor. A particularly convenient way of achieving this end is to make use of the substantially linear temperature dependence of the base-emitter voltage of integrated circuit transistors. In this particular embodiment this effect is used to provide a sensor having two parts, one producing an output current 1A with a negative temperature coefficient, and the other producing an output current 1B with an equal, but opposite, positive temperature coefficient. It is also convenient to use another part of the same integrated circuit to provide varicap diode and the rest of the oscillator circuit, with the exception of the crystal 31 itself. In some circumstances a separate varicap diode may be preferred because of the greater voltage swing then obtainable. Finally a further part of the same integrated circuit is conveniently used to provide a voltage reference. This integrated circuit is conveniently a semi-custom design analogue array integrated circuit. Typically, if the power series function generator is required to generate more than three terms, then more than one such array may be required to accommodate all the circuitry. Referring now to Figure 4, the compensation network consists essentially of a voltage reference 40, a two-part temperature sensor 41a and 41b, two analogue multipliers 42 and 43, three current-to-voltage signal converters 44, 45 and 46, and a summing amplifier 47. With the exception of a number of resistors that are difficult to implement adequately in integrated circuit form, all the components of the compensation network are formed in a single integrated circuit. The circuit diagram of the voltage reference 40 is depicted in Figure 5. This circuit has an unregulated voltage input 50, and first and second reference voltage outputs 51 and 52. It uses a standard band-gap circuit to generate a constant voltage of 1.2 volts at the base of transistor Tg. . Transistors T8 and Tg operate at different current densities and therefore develop a positive temperature coefficient voltage across resistor R2. This is scaled up by the resistor ratio R3 R2r and is added to the negative temperature coefficient of transistor T9 to give an output of about 1.23 volts with zero temperature coefficient. Resistor R1 and transistors T1 and T2 comprise a start-up circuit for the circuit, while the Darlington transistor pair T3 and T4 operate to minimise the drop out voltage and instability in the circuit. The constant voltage at the base of transistor T9 is scaled up by the resistor-diode networks 54 and 55. The scale factor is a rational fraction k = n/m = R4/R5 where n and m are the number of diodes in the respective networks. Typically the scale factor is 2 : 1 giving a reference voltage output at 51 of about 3.6 volts. A current source with a substantially linear negative temperature coefficient can be provided by a single circuit of the type depicted in Figure 6. Here the sum of the voltage drop across the base emitter junction of transistor T10 and that across the resistor R6 is equal to the sum of the' voltage drops across the base-emitter junctions of the two transistors T11 and T12 each having its base shorted to its collector so that it functions as a diode. Therefore VBE + IA R10 - BE @ VBE. VBE has a negative temperature coefficient, and therefore IA will also have a negative temperature. coefficient. Reverting attention to the voltage regulator circuit diagram of Figure 5, it can be seen that the top two diodes of resistor diode network 54 can also function as the diodes of the circuit of Figure 6. A complementary current source with a substantially linear positive temperature coefficient provided by a simple circuit of the type depicted in Figure 7. A constant voltage VK applied to the base of transistor T13 provides a collector current IB satisfying the relationship VK t 1B R7 + VBE VBE has a negative temperature coefficient, and hence IB has a positive temperature coefficient. The circuits of Figures 6 and 7 thus provide the two parts of the temperature sensor of Figure 4. Each of the two analogue multipliers 42 and 4'3 is provided by a circuit as depicted in the circuit diagram of Figure 8. Transistors T14, T15, T16 and T17 form a cross coupled analogue multiplier structure provided with an active load by transistors T18 and T19. For currents Ip, IQ, 1R and IS the output current 10 can readily be shown to satisfy the relationship Io = (Ip - IS)(IQ - IR)/(Ip + Is) Inspection of this relationship shows that the output current 10 will have a quadratic dependence upon temperature by making IP - 10 = 1A and 1R = IS = 1B. This gives the required relationship for multiplier 42. 12 is thus given by I2 = (IA - IB)ê/(IA + IB). (IA + IB) is temperature invariant, and hence I3 has a simple square law dependence upon temperature. For multiplier 43, IP - IA and Is - IB to give a temperature invariant divisor in the multiplier equation, while IQ = I2 + ICI and IR = IC2 where IC1 and IC2 are temperature invariant currents. I3, the output of multiplier 43, thus satisfies the relationship 2 I3= (IA-IB)(((IA-IB)ê + IC1 - 1C2)(IA + Ig) Thus I3 has a temperature dependence, provided by the sum of a cubic term and a linear term, whose relative magnitude is made close to that of the minimum excursion form of the Chebyshev polynomial C3 by the appropriate choice of values for 1C1 and IC2. The basic structure of each of the current-tovoltage converters 44, 45 and 46 of Figure 4 is given by the circuit diagram of Figure 9. Each converter has a current input at 90 and a voltage output at 91. It will be noted however, that this converter requires a unidirectional current to be applied to its input. The input to converter 44 is IA which is unidirectional. The output current 12 is also unidirectional, but the temperature invariant current IC2 is added to give a constant component to the output voltage V3 and reduces the coefficient Ao in the summing amplifier. The output current 13 of multiplier 43 is bidirectional, and the previously referred to temperature invariant current 1C3 is used as an offset current, and is added to I3 to provide the requisite unidirectional current input to converter 46. Current mirrors are employed to create images and duplicates of the various currents in the power series generator as required. These are illustrated in the circuit diagram of Figure 10. Figure 10 shows the resistor diode networks of an embodiment of the voltage reference 40 that has two diodes in network 54 and a single diode in network 55. The two diodes of network 54 also function as the two diodes of the negative temperature coefficient current generator 41a. The output of this generator is fed direct to the current-tovoltage converter 44, which has an extra diode inserted between its resistor and the negative rail. This diode forms part of a multiple current mirror 100. The constant voltage source for the positive temperature coefficient current generator is taken from the second reference voltage appearing at 52. This current is reflected in a current mirror 101, and further reflected in a multiple current mirror 102. A further multiple current mirror 103 is used to provide the requisite constant currents 1Cl' IC2 and Ic3 whose magnitudes are determined by the relative values of resistors Rg, Rlo, R11 and R12. The output current of multiplier 42 is suitably offset by the constant current ICl to provide a unidirectional current (I2 + ICl) which is reflected in multiple current mirror 104. One reflection is fed to current-to-voltage converter 45, while the other reflection is taken to a current mirror 105 for the 'Q' terminal of multiplier 43. Similarly the output current of multiplier 43 is suitably offset by the constant current 1C3 to provide a unidirectional current (I3 + Ic3) for feeding to current-to-voltage converter 46 via a current mirror 106. Referring now to Figure 11, the voltage outputs V1 to V4 are fed to the summing amplifier 47, which is a differential amplifier, via a resistor network comprising resistors RA to RF. Positive coefficients are fed to the, non-inverting input of the differential amplifier, while negative coefficients are fed to the inverting input. Thus Figure 11 shows the arrangement where the first and fourth outputs V1 and V4 of the power series function generator are required to be positive, while the second and third outputs V2 and v3 are negative. The control signal output for driving the control element, the varicap diode, in the oscillator reedDacK patn, is in tflis instance given by V(T) r (RP/RA)Vl - (RF/RB)V2 - (RF/RC)V3 + (RF/RD)V4 where RE satisfies the relationship l/RE - 1/RF + 1/RB + l/RC - 1/RA I/RD These resistors RA to RF providing the weighting coefficients are discrete off-chip resistors, but it is found that the coefficients can be adequately represented using 2% accuracy E24 series resistors over 4 decades rather than the 1% accuracy E96 series resistors required for the three thermistor resistor temperature compensation ladder network of the prior art. Discrete off-chip resistors are also required for resistors R6 and R7 used in generating the negative and positive temperature coefficient current outputs of the temperature sensor. It is also convenient to use discrete off-chip resistors for the resistor R1 of the voltage reference 40 (though an on-chip resistor can be used here because the tolerance is not critical) and the resistor R9 feeding current mirror 103 which provides the offset currents IC1' 1C2 and IC3' In the case of a temperature compensated oscillator requiring the use of more than four terms in the power series expansion, the fifth term is generated by a third analogue multiplier (not shown) feeding a further current to voltage converter (not shown). The arrangement inputs to the multiplier are similar to those of multiplier 43, thus the P and S terminals are provided with currents IA and 1B respectively, terminal R is provided with a constant current Ic4 and terminal Q is provided with a current derived from the previous multiplier via an additional current mirror. The output of the multiplier is similarly offset by a further constant current Ic5 and fed via a current mirror (not shown) to its associated current to voltage converter (not shown). Succeeding stages, if required are similarly connected in cascade. Conversely if fewer stages are required, such as may be the case for oscillators requiring stabilisation over the more restricted temperature range from 0 to 700C, some of the later stages can be omitted. Thus an appropriately oriented AT-cut crystal can typically be adequately temperature compensated over the 0 to 70 C range using only V1 and V2, the constant and linearly temperature dependent terms of the power series expansion. It should also be clearly understood that the invention is applicable to temperature compensation of other types of cut of crystal, for instance the BT-cut can be used which would require a much larger square law coefficient than is encountered in AT-cut crystals.

Claims: CLAIMS 1. A temperature compensated crystal oscillator consisting of a crystal oscillator circuit and a temperature sensitive compensation circuit, wherein the crystal oscillator circuit has a frequency pulling control element connected in its frequency selective positive feedback path, characterised in that the temperature sensitive compensation circuit includes a temperature sensor whose output is connected to drive the control element via a power series function generator and a summing amplifier, wherein the temperature sensor is adapted to provide an electrical output f(t) that is a monotonically varying function of temperature, wherein the power series function generator is adapted to generate a series of outputs of which the nth output is a polynomial function in f(t) of order (n-l), and wherein the summing amplifier is adapted to provide a weighted sum of the power series function generator outputs, which sum is applied to the control element. 2. An oscillator as claimed in claim 1, characterised in that the power series function generator generates a series of three or more outputs. 3. An oscillator as claimed in claim 1 or 2, characterised in that the crystal is an AT-cut crystal. 4. An oscillator as claimed in claim 3, characterised in that the angle of the cut is chosen to provide substantially minimum excursion of natural resonant frequency over the working temperature range and wherein the third output of the power series function generator has a minimum excursion form approximating to the Chebyshev polynomial term C3. 5. An oscillator as claimed in any preceding claim, characterised in that the active components of' the temperature sensor, power series function generator and summing amplifier are provided on one or more integrated circuits. 6. An oscillator as claimed in claim 5, characterised in that the or each integrated circuit is provided by a semi-custom analogue array. 7. An oscillator as claimed in claim 5 or 6, characterised in that the integrated circuit(s) includes a voltage reference. 8. An oscillator as claimed in claim 5, 6 or 7, characterised in that the integrated circuit(s) includes the frequency pulling control element of the oscillator circuit. 9. An oscillator as claimed in claim 5, 6, 7 or 8, characterised in that the only discrete off-chip components of the integrated circuit circuitry are resistors. 10. An oscillator as claimed in claim 5, 6 or 7, characterised in that the integrated circuit(s) includes the oscillator circuit with the exception of the frequency pulling control element and the crystal itself. 11. An oscillator as claimed in claim 8, characterised in that the integrated circuit(s) includes the oscillator circuit with the exception of the crystal itself. 12. An oscillator as claimed in claim 10 or 11, characterised in that the only discrete off-chip components. of the integrated circuit circuitry are resistors and the crystal. 13. An oscillator as claimed in claim 9 or 11, characterised in that said discrete off-chip resistors are 2% accuracy E 24 series resistors. 14. An oscillator as claimed in any claim of claims 5 to 13, characterised in that the temperature sensor includes circuitry adapted to provide substantially linear positive and negative temperature coefficient current outputs of substantially equal coefficient modulus, both derived from the temperature characteristic of the base emitter voltages of elements in the integrated circuit chip. 15. An oscillator as claimed in any preceding claim, characterised in that the frequency pulling control element.is a varicap diode.

Inventors: ROKOS, GEORGE HEDLEY STORM, WILSON, JAMES STANLEY
Applicants: STC PLC
Application year: 1983
Main classification: H03L1
IPC codes: H03L1