METHOD FOR SINTERING SILICON NITRIDE

Abstract: The invention relates to the method of sintering silicon nitride for obtaining a silicon nitride sintered compact having advanced high temperature strength and high density, the method wherein silicon nitride powder mixed with at least one kind selected from among the metallic oxides except silicon oxide and/or at least one kind selected from among the nitrides and carbides of the IVa, Va, VIa metals is pressed and sintered being characterized in that the heating process is effected in atmospheres of different conditions varying by stages from the elevation of temperature to the completion of sintering, i.e. a vacuum below 10⁻³ atm for the first stage, a partial pressure atmopshere of 10⁻³- 0.9 atm for the second stage, and a high pressure atmosphere above 1 atm for the third stage. The invention enables to impart the aforedescribed characteristics to a silicon nitride sintered compact, although it has been considered difficult to sinter due to its covalent bending, e.g. Si₃N₄ powder alone, and to produce a sintered compact of advanced high temperature strength and high density even when sintered in a vacuum, under normal pressure or under pressure at a high temperature by using a sintering additives such as metallic oxides, nitrides, carbides, etc.

Description: Method for Sintering Silicon Nitride The invention relates to the method of sintering silicon nitride for obtaining a sintered compact of silicon nitride having advanced high temperature strength and high density. Ceramics, particularly as a heat resisting material, has been extensively developed in recent years, and silicon nitride (Si3N4) in particular is well known among the covalent compounds having stabilized heat resistance at high temperatures. Generally, ceramics is produced by pressing and sintering the powder material. Silicon nitride, however, is difficult to be sintered comparing with the ceramics of general oxides. Thus it is difficult to obtain a sintered compact of high density from Si3N4 powder only. In case of Si3N4 powder, therefore, it is sintered with a sintering additives such as the powdered oxides of MgO, A1203, Y203, CeO2, BeO, etc. and/or the nitrides and carbides of the IVa, Va, VIa metals of the periodic table. The conventional method wherein Si3N4 powder mixed with a sintering additives is pressed and sintered inva vacuum or normal pressure is industrially useful for its lo cost. It has a disadvantage, however, in that the micro pores remain in the sintered compact and it is very difficult to obtain a 3i3N4 sintered compact of high density. The hot press method of sintering Si3N4 powder under high pressure at a high temperature enables to obtain a sintered compact of higher density. This method, however, has a disadvantage in that the strength is reduced at higher temperature and the sintering cost is high. Since the reduction in the high temperature strength is attributable to the growth of a low melting point material on the Si3N4 powder interface due to the sintering additives, the disadvantage is unavoidable insofar as the sintering additives is used. Various other methods have been tried, for example, the method of sintering in a high pressure gas atmosphere by reducing the mixing ratioofthe sintering additives or without adding the sintering additives, the method of shock compacting that sinter after imparting a high pressure to powder instantaneously. All these methods, however, have been industrially unsuccessful because of the disadvantages, such as high sintering cost, the phenomenon of reduction in the high temperature strength, etc. In view of the foregoing, the inventors concerned have accomplished the invention after a series of tests wherein Si3N4 powder mixed with the sintering additives was pressed and sintered under varied conditions, i.e. in a vacuum, partial pressure atmosphere, high pressure atmosphere, and at different temperatures, thereby enabling to obtain a Si3N4 sintered compact having advanced high temperature strength and high density even when sintering additives are used. The invention will hereinunder be described in detail in reference to the accompanying drawings. Fig.l(A) is a chart showing the interrelation between the pressure of sintering atmosphere and the sintering hour. Fig.l(B) is a chart showing the interrelation between the sintering temperature and the sintering hour. Fig.2(A) is a chart showing the interrelation between the pressure of sintering atmosphere and the sintering hour of another example. Fig.2(3) is a chart showing the interrelation between the sintering temperature and the sintering hour. Fig.3 is a diagram for describing the sintering method according to the invention, wherein the solid line 1 shows the temperature while the dotted line 2 shows the pressure of atmosphere, respectively. The method according to the invention wherein Si3N4 powder mixed with sintering additives are pressed and sintered is characterized in that the atmosphere from the elevation of temperature to the completion of sintering is varied by stages, i.e. a vacuum below 10-3 atm for the first stage, a nitrogen partial pressure atmosphere of 10-3-0.9 atm for the second stage, and in a high pressure atmosphere above 1 atm for the third stage, thereby enabling to obviate the defect of the conventional sintered compact, i.e. reduction of the high temperature characteristics, and to obtain Si3N4 sintered compact having high density and advanced high temperature strength. The sintering method according to the invention will hereinunder be described in more detail. Silicon nitride is mixed with sintering additives comprising at least one kind selected from among the metallic oxides of Li, Be, Mg, Al, Ti, Ca, Y, Zr, Ba, Ce, etc. except silicon and/or at least one kind selected from among the nitrides and carbides of the IVa, Va, VIa metals of the periodic table. The mixture is carefully blended, pressed and sintered in the furnace by elevating the temperature. The process from the elevation of temperature to the completion of sintering, for example, comprises the following three stages as shown in Fig.3. (1) a vacuum below 10 3 atm for the first stage of 0-1100 C (2) an atmosphere having a nitrogen partial pressure of 10-3-0.9 atm for the second stage of 1100-1800 C (3) a high pressure nitrogen atmosphere above 1 atm intermediately in the maintenance of the sintering temperature of 18000C In the first stage (1), the vacuum below 10-3 atm enables to remove oxygen and water absorbed in the pressed Si3N4 powder containing the sintering additives; in the second stage (2), the oxidized layer on the surface of the pressed powder is removed, while the interface composition is controlled so as to restrain the coarsening growth of Si3N4 crystals; and in the third stage (3), the high pressure atmosphere above 1 atm helps complete the sintering while restraining the decomposition of Si3N4. Thus a sintered compact of high density and advanced high temperature strength is obtainable by varying the sintering atmosphere by three stages. Sintering of Si3N4 progresses most conspicuously at 1100-1800 o in the second stage, and it is preferable that the pressure of the atmosphere is as small as possible so that the sintered compact is free from the residue of micro pores. N2 gas, N2 +H2 mixed gas, N2 +CO mixed gas or N2 + H2 + CO mixed gas is effective as a partial pressure atmosphere of l0-0.9 atm in the second stage, while the high pressure atmosphere above 1 atm in the third stage can comprise the ordinary pressure atmosphere of 2-150 atm or hot isostatic pressure (HIP) of approximately 2000 atmosphere degrees, etc. The same effect can be obtained even when the atmosphere is controlled in the same way by using hot press. N2 gas, Ar gas or their mixed gas are effective as the third stage atmosphere. Figs.l and 2 show the interrelation between the pressure of atmosphere, sintering hour and sintering temperature in the heating process according to the invention. Fig.l(A) shows the interrelation between the pressure of atmosphere and sintering houP when N2 gas is employed as a partial pressure atmosphere in the second stage, while Fig.l(B) shows the relative interrelation between the sintering temperature and sintering hour. The diagrams cover Example 1 to be described hereinafter. Fig.2(A) and (B) shovel the same interrelations as in Fig.l(A) and (3) in which the partial pressure atmosphere of the second stage is replaced by a mixed gas of N2 gas and CO gas. The diagrams cover Example 3 to be described hereinafter. The invention will now be described in detail with reference to the following examples. Example 1 Powders of Si3N4 (made by Stark & Co. ,Ltd. ,West Germany) 100 g containing o( type above 90% and MgO 5 g were mixed and pulverized by a ball mill. The mixture was formed into a plate 50 mm in length, 25 mm in width and 10 mm in thickness under a pressure of 2 t/cm2 , and the plate thus obtained was placed in the sintering furnace. After the furnace had been made vacuous (1. 3x10-4 atm), the temperature was elevated until it reached 11000C, N2 gas was introduced at a flux of 5Q/mln with the pressure set at 0.6 atm by controlling the exhaust valve. The temperature was further elevated until it reached 1600 C. The exhaust valve was closed and N2 gas was introduced until the pressure was controlled to 10 atm. The temperature in the furnace was elevated to and held atl8O00C for 1 hour. Then the temperature was lowered to 1000 C, the pressure of atmosphere was reduced to 1 atm, and the temperature was lowered continuously. The sintered compact was taken out of the furnace after it was fully cooled. The characteristics of the sintered compact thus obtained are as shown in Table 1. By way of comparison, there are shown sintered compacts made of the same powder as in Example 1 and sintered under different conditions: in N2 gas atmosphere of 1 atm and 10 atm from the initial stage of temperature elevation, and in a vacuum until 11000C and then in N2 gas atmosphere of 10 atm after 1100 O. Table 1 EMI7.1 <tb> <SEP> Q) <SEP> 8 <tb> <SEP> 0 <tb> <SEP> P; <SEP> VZ <SEP> Wi <tb> <SEP> 8 <tb> <SEP> &commat; <SEP> S <tb> <SEP> S <SEP> N <SEP> H <tb> <SEP> "6U <SEP> o <tb> <SEP> Atmosphere <SEP> at <tb> <SEP> 0 <tb> <SEP> cu <SEP> ar <tb> <SEP> tD <SEP> 1100 <SEP> S <SEP> l6OO0C <SEP> fd <SEP> m <tb> <SEP> l0atm <tb> <SEP> o <SEP> rt <SEP> k <SEP> $ <SEP> Rk <tb> <SEP> I <SEP> E: <SEP> rl <SEP> a, <SEP> aao <SEP> I <tb> <SEP> re, <SEP> o <tb> <SEP> k <SEP> rl <SEP> m <SEP> t <SEP> t <SEP> oaod <tb> <SEP> 4 <SEP> cd <SEP> I <SEP> rl <SEP> (d <SEP> Q) <SEP> Q) <SEP> 0 <SEP> 5 <tb> <SEP> R <SEP> OkY <SEP> was <tb> 0 <SEP> formed <SEP> due <tb> <SEP> C <tb> 0, <SEP> Oxygen <SEP> Content(wt%) <SEP> 2.5 <SEP> to <SEP> decompo- <SEP> 5.0 <SEP> 2.9 <tb> 8 <SEP> sition <SEP> of <tb> <SEP> a, <SEP> Strength(kg/2 <SEP> Si3N4 <tb> <SEP> mm) <tb> <SEP> z <SEP> ç <SEP> O <SEP> =1 <SEP> N <SEP> U <tb> S <SEP> l <SEP> 85 <SEP> t; <SEP> 75 <tb> <SEP> O <SEP> m <SEP> ar <SEP> cO <SEP> Ln <tb> <SEP> C, <SEP> l2OOcC <SEP> 76 <SEP> 59 <SEP> 72 <tb> <SEP> H <SEP> Wi <SEP> z <tb> <SEP> I <SEP> O <SEP> O <SEP> O <SEP> \ <SEP> O <SEP> a > <tb> <SEP> / <SEP> h <SEP> <SEP> 0 <SEP> 8 <SEP> bD <SEP> M <SEP> v <SEP> X <tb> <SEP> / <SEP> 1 <SEP> o <SEP> Uz <SEP> h <SEP> V <SEP> V <tb> <SEP> / <SEP> i4 <SEP> 1 <SEP> 1 <SEP> 1 <SEP> tJ <SEP> g <SEP> <tb> <SEP> / <SEP> O <SEP> X <SEP> &commat; <SEP> H <SEP> O <SEP> ew <SEP> sP <tb> <SEP> / <SEP> O <SEP> O <SEP> O <SEP> R <tb> <SEP> / <SEP> UOt <tb> <SEP> / <SEP> 3mlswaim&commat;;C <SEP> OBiWoo <SEP> pazaluTs <tb> <SEP> / <SEP> Jo <SEP> ssacowd <SEP> Jo <SEP> soFwsx <tb> Example 2 Powders of Si3N4 (made by Stark & Co.,Ltd.,West Germany) 100 g containing o( type above 90% and A1203 5 g, TiN 5 g, were mixed and pulverized by a ball mill. The mixture was formed into a plate 50 mm in length, 25 mm in width and 10 mm in thickness under a pressure of 2t/cm2 and the plate thus produced was placed in the sintering furnace. After the furnace had been made vacuous (1.3x10-4 atm), the temperature was elevated until it reached 1100 C. N2 gas introduced at a flux of 5#/min, the pressure being set at 0.6 atm by controlling the exhaust valve. The temperature was further elevated, and the exhaust valve was closed in the middle of the sintering keep at 18000 C. rl'he pressure of the atmosphere was controlled to 10 atm by introducing N2 gas, and the sintering was completed at this temperature. After the temperature inside the furnace had been lowered to 12000 C, the pressure of atmosphere was reduced to 1 atm while the temperature was further lowered continuously. The sintered compact was taken out of the furnace after it had been completely cooled. The characteristics of the sintered compact thus obtained are as shown in Table 2. Table 2 EMI9.1 <SEP> h <tb> <SEP> Example <SEP> 2 <tb> <SEP> x <SEP> . <SEP> ¯ <SEP> ¯ <tb> 4 <SEP> B <SEP> Atmosphere <SEP> at <tb> I <SEP> 0 <SEP> O <SEP> - <SEP> 1100 <SEP> C <SEP> 1.3x10-4 <SEP> atm <SEP> vacuum <tb> 1100 <SEP> X <SEP> 1100 <SEP> - <SEP> 1100 <SEP> N2 <SEP> gas <SEP> 0.6 <SEP> atm <tb> oo) <tb> AaX <SEP> 1800C <SEP> C(latter <SEP> half) <SEP> N2 <SEP> gas <SEP> 10 <SEP> atm <tb> Density <SEP> (g/cm3) <SEP> 3.4 <tb> 0 <tb> Oxygen <SEP> Content(wt) <SEP> 2.2 <tb> v <SEP> O <SEP> Bending <SEP> Strength <tb> rl <SEP> (kg/mm2) <tb> Room <SEP> o <SEP> Room <SEP> Temperature <SEP> 87 <tb> <SEP> 12000C <SEP> 78 <tb> S <SEP> X <SEP> 1400C <SEP> 60 <tb> From the Table above, it is understood that the same effect can be obtained if additive element like sintered additives are changed. Example 3 A sintered compact of Si3N4 was obtained through the same process as in Example 1 except that the pressure was set at 0.8 atm by synchronously introducing N2 gas at a flux of 5; /mien and H2 gas at a flux of 2#/min instead of setting the pressure at 0.6 atm by introducing N2 gas at a flux of 5Q /min in the temperature elevation process from 1100 to 1600eC as in Example 1. The physical properties of the sintered compact are as shown in Table 3. Table 3 EMI10.1 <tb> <SEP> Example <SEP> 3 <tb> <SEP> Lltmosphere <SEP> at <tb> <SEP> a > <SEP> a <tb> 1100 <SEP> - <SEP> 160000 <SEP> gas <SEP> 0.8 <SEP> atm <tb> o <SEP> 1100 <tb> o0) <tb> 1600 <SEP> 1600 <SEP> - <SEP> 18000C <SEP> N2 <SEP> gas <SEP> 10 <SEP> atm <tb> v <SEP> Density <SEP> ( <SEP> vem3) <SEP> 3.4 <tb> o <SEP> P <SEP> Oxygen <SEP> Content(nt%) <SEP> 2.0 <tb> -ro <tb> C, <SEP> Bending <SEP> Strew2 <tb> kg/mm) <tb> 0)0, <tb> Room <SEP> Temperature <SEP> 86 <tb> v <SEP> 1200 <SEP> c <SEP> 79 <tb> 0 <tb> <SEP> 1400cC <SEP> 65 <tb> Tables 1 to 3 show that Examples 2 and 3 having smaller oxygen content compared with Example 1 have greater high temperature bending strength.

Claims: Claims: 1. The method for sintering silicon nitride wherein silicon nitride powder mixed with sintering additives is pressed and sintered, characterized in that the atmosphere in the process from temperature elevation to sintering is varied by stages, i.e. a vacuum for the first stage, a partial pressure atmosphere for the second stage, and a high pressure atmosphere for the third stage. 2. The methoafor sintering silicon nitride as defined in claim 1 characterized in that the vacuum is below 10-3 atm. 3. The method for sintering silicon nitride as defined in claim 1 characterized in that the partial pressure atmosphere has a partial pressure of 10 3-0.9 atm. 4. The method for sintering silicon nitride as defined in claim 1 characterized in that the high pressure atmosphere is above 1 atm. 5. The method for sintering silicon nitride as definedin claim lcharacterized in that the sintering additives is at least one kind selected from among the metallic oxides comprising L Mg, Al, Ca, Ti, Y, Zr, Ba, Ce, etc. except Si. 6. The method for sintering silicon nitride as defined in claim 1 characterized in that the sintering additives i8 at least one kind selected from among the nitrides and carbides of the IVa,Va,VIa metals of the periodic table. 7. The method for sintering silicon nitride as defined in claim 1 characterized in that the sintering additives is at least one kind selected from among the oxides of Li, Be, Mg, Al, Ca, Ti, Y, Zr, Ba, Ce, etc. except Si and the nitrides and carbides of the IVa, Va, VIa metals. 8. The method for sintering silicon nitride as defined in claim 3 characterized in that the gas of the second stage atmosphere is N2 gas, N2 + H2 mixed gas, N2 + CO mixed gas or N2 + H2 + CO mixed gas. 9. The method of sintering silicon nitride as defined in claim 4 characterized in that the gas of the third stage atmosphere is N2 gas; Ar gas or their mixed gas.

Inventors: HIGUCHI, MATSUO C/O ITAMI WORKS, HONDA, MASAAKI C/O ITAMI WORKS, KAMIJO, EIJI C/O ITAMI WORKS, NISHIMOTO, TATSUYA C/O ITAMI WORKS, TSUKADA, HIROSHI C/O ITAMI WORKS
Applicants: SUMITOMO ELECTRIC INDUSTRIES LIMITED
Application year: 1982
Main classification: C04B35
IPC codes: C04B35