ELECTRON BEAM EXPOSURE METHOD AND APPARATUS

Abstract: In an electron beam exposure apparatus, both a high acceleration voltage electron beam source (10,21) and a low acceleration voltage electron beam source (11,20) are provided. In one embodiment (Figure 3), the high acceleration voltage electron beam (EB H ) from the source (10) is used for forming fine patterns, and the low acceleration voltage electron beam (EB L ) from the source (11) is used for forming coarse patterns. In another embodiment (Figure 4), the high acceleration voltage electron beam (EB S ) from the source (21) is used for position-detection and the low acceleration voltage electron beam (EB M ) from the source (20) is used for pattern-formation.

Description: ELECTRON BEAM EXPOSURE METHOD AND APPARATUS The present invention relates to an electron beam exposure method using two electron beam sources and to an electron beam exposure apparatus including two electron beam sources. This method and apparatus can be used to manufacturing semiconductor devices. In the electron beam exposure process applied to a mask or a semiconductor wafer, the beam acceleration voltage VAc is a very important factor. The beam image spread on the resist surface and the resist sensitivity of the electron beam change in accordance with the beam acceleration voltage VAc. When the beam acceleration voltage VAC is high, it is easy to focus the electron beam to a small beam diameter, but the resist sensitivity is low. Conversely, when the beam acceleration voltage VAc is low, it is difficult to focus the electron beam to a small beam diameter, but the resist sensitivity is high. In addition, to form a required pattern on the resist film on the wafer by projecting an electron beam, it is necessary to detect with a high precision the position on which the electron beam is actually projected. Even higher precision in detecting the above-mentioned position has become necessary as the integration scale of IC?s has become greater and the circuit patterns of IC's have become finer. The above-mentioned position detection can be effected by using the fact that when an electron beam projected on the surface of the resist, electrons are reflected from the surface. An unevenness of the resist surface can be detected from the change in the amount of the reflected electrons, thereby enabling position information to be obtained. For example, if the detected unevenness of the wafer surface is due to a position mark or alignment mark formed previously on the wafer surface for position detection, the wafer position can be determined from the detection of the mark. If-the detected unevenness of the wafer surface is due to the electrode wiring line in the first layer formed on the wafer surface, since the wiring pattern in the first layer is previously determined, the wafer position can be determined from the wiring pattern information and the detection of the electrode wiring line. However, if the diameter of the electron beam is wide, it is impossible to detect the unevenness with high precision. On the other hand, if the diameter of the electron beam is narrow, the amount of the reflected electrons varies sharply. Thus, from the point of view of position detection, the diameter of the electron beam should be narrow. However, a narrow beam diameter results in the problem of long exposure time, as described above Thus, it is impossible to satisfy these two conflicting requirements and, in general, a compromise has been reached between the two. According to one aspect of this invention in an electron beam exposure method for use in the manu facture of a semiconductor device both a high acceleration voltage electron beam and a low acceleration voltage electron beam are generated and projected onto a resist layer to be exposed. According to another aspect of this invention an electron beam exposure apparatus includes two electron beam sources, a high acceleration voltage electron beam source, and a low acceleration voltage electron beam source. This method and apparatus enables the circuit pattern on a wafer for an IC including a fine pattern and coarse pattern to be exposed in a shorter time. It also enables a main electron beam to be used for the exposure process and a subsidiary electron beam to be used for the position detection. Particular examples of a method and apparatus in accordance with this invention will now be described with reference to the accompanying drawings; in which: Figure 1 illustrates the exposure effects of the high acceleration voltage electron beam and the low acceleration voltage electron beam; Figures 2(a) and 2(b), and 2(c) illustrate the position detection effect of using reflected electrons from the electron beam; Figure 3 is a schematic representation of a first example of electron beam exposure apparatus; and, Figure 4 is a schematic representation of a second example of electron beam exposure apparatus. In the electron beam exposure process applied to a mask or a semiconductor wafer, the beam acceleration voltage VAC is a very important factor. The beam image spread on the resist surface and the resist sensitivity of the electron beam change in accordance with the beam acceleration voltage VAC When the beam acceleration voltage VAC is high, it becomes easy to focus the electron beam to a small beam diameter, but the resist sensitivity becomes low. Conversely, when the beam acceleration voltage VAC is low, it becomes difficult to focus the electron beam to a small beam diameter, but the resist sensitivity becomes high. The above is illustrated in Fig. 1. In Fig. 1, EB indicates a low acceleration voltage (vAc = 5 to 20 kV) electron beam, and EBH indicates a high acceleration voltage (VAc = 20 to 50 kV) electron beam. When the resist 1 is exposed to the electron beams EB and EBH , a reaction is caused in the inner region 2 and 2' of the resist 1. The high acceleration voltage electron beam tends to penetrate straight into the resist 1 and passes through the resist 1 without being scattered. Thus, the reacting region 2' exposed by the beam EBH is narrow (that is, the beam image spead is small). Accordingly, the beam EBH can be advantageously used to draw fine patterns. However, since the resist sensitivity of the high acceleration voltage electron beam EBH is low, the exposure time necessary to form a desired pattern by the beam EBH is long. Accordingly, it takes longer than necessary to draw a coarse pattern. The low acceleration voltage electron beam EB, tends to penetrate the resist 1 while colliding with the inner atoms, emitting secondary electrons, and scattering. The secondary electrons R2 produced by the electron beam react with the resist 1 to form the reacting region 2. The image projected on the resist I spreads like a water droplet, making the electron beam EBL unsuitable for drawing fine patterns. However, the low acceleration voltage electron beam is advantageous for forming coarse patterns because ibs exposure time is short. However, if the diameter of the electron beam is wide, as shown as EBM in Fig. 2(a), it is impossible to detect the boundary 3 of the step portion of the resist 1 to a high precision. For example, if the electron beam EBM is scanned from the left to the right in the drawing, the amount of the reflected electrons RlM varies as shown in Fig. 2(b) and, as seen from the curve of Fig. 2(b), the variation of the amount of the reflected electrons corresponding to the boundary of the step portion 3 does not appear so clearly. On the other hand, if the diameter of the electron beam is narrow, as shown as EBs in Fig. l(a), the amount of the reflected electrons RIS varies sharply correspondingly to the boundary of step 3 as shown in Fig. 2(c). Thus, from the point of view of position detection, the diameter of the electron beam should be narrow. However, a narrow beam diameter results in the problem of long exposure time, as described above. One embodiment of the present invention is illustrated in Fig. 3. In Fig. 3, 10 indicates a high acceleration voltage (for example, VAc = 30 kV) electron beam source, 11 indicates a low acceleration voltage (for example, VAC - 10 kV) electron beam source, 12 indicates a semiconductor wafer, and 13 indicates an XY moving table. The electron beams EBH and EBL respectively-emitted from the above -mentioned electron beam sources 10 and 11 and controlled independently are projected on the wafer 12. The formation of fine patterns on the surface of the wafer 12 is carried out by the high acceleration voltage electron beam EBH while the formation of rough patterns on the surface of the wafer 12 is carried out by the low acceleration voltage electron beam EBL In order to form fine patterns, it is necessary to focus the electron beam to a small beam diameter. Thehigh acceleration voltage electron beam EBH is advantageous for forming fine patterns, as described above. On the other hand, the low acceleration voltage electron beam EBL is advantageous for - forming rough patterns. The following table shows the relation of the acceleration voltage of the electron beam to its beam diameter and to its resist sensitivity. TABLE EMI6.1 <tb> Acceleration <SEP> Beam <SEP> diameter <SEP> Resist <SEP> sensitivity <tb> voltage <SEP> (kV) <SEP> (um) <SEP> (c/cm2) <SEP> <tb> <SEP> 5 <SEP> 1.0 <SEP> 3 <SEP> x <SEP> 10-7 <SEP> <tb> <SEP> 10 <SEP> 0.3 <SEP> 1 <SEP> x <SEP> 10-6 <SEP> <tb> <SEP> 20 <SEP> 0.22 <SEP> 3 <SEP> x <SEP> 10-6 <SEP> <tb> <SEP> 40 <SEP> 0.20 <SEP> 7 <SEP> x <SEP> 10-6 <SEP> <tb> In the electron beam exposure process, a small beam diameter is desirable for the formation of fine patterns, and a high resist sensitivity means a short exposure time per unit area. As seen from the above table, according to the above -mentioned electron beam exposure method in which fine patterns are formed by the high acceleration voltage electron beam and rough patterns are formed by the low acceleration voltage electron beam, the exposure time necessary for a piece of wafer on which not only rough patterns but also fine patterns are formed can be shortened without decreasing the precision of the pattern formation. The electron beam exposure of the wafer is generally carried out by using a scanning method. In this scanning method, for example, a field of 4 mm square is considered one unit area for one exposure process. The electron beam is scanned in this field and turned on and off during scanning so as to form desired patterns. In the case of the electron beam exposure process of Fig. 3, the two electron beams EBH and EBL are simultaneously scanned in the above -mentioned field and independently turned on and off so that the electron beam EBH draws fine patterns and the electron beam EBL draws rough patterns. When the exposure process of one field is finished, the driving motor of the XY moving table 13 is activated to move the wafer 12 by one field pitch. Then, the above-mentioned process is repeated. As described above, according to the embodiment of Fig. 3 of the present invention, fine and rough patterns can be formed on the wafer surface with high precession in a short exposure time by using a high acceleration voltage electron beam with a small beam diameter and a low acceleration voltage electron beam with a large beam diameter. Another embodiment of the present invention is illustrated in Fig. 4. In Fig. 4, 20 indicates a main electron beam source, 21 indicate a sub-electron beam source, 22 indicates a wafer, 23 indicates an XY moving table, and 24 indicates a detector of the reflected electrons. The main electron beam source 20 emits a main electron beam EBM used for the exposure of the wafer. The acceleration voltage of the electron beam EBM is low, for example VAc = 10 kV. The sub-electron beam source 21 emits a sub-electron beam Ess used for detecting the wafer position The acceleration voltage of the electron beam EB5 is high, for example VAC = 40 kV. The electron beams EBM and EBS are projected on the wafer 22, and the amount of the reflected electrons is detected by the detector 24, comprised of, for example a scintillator. Since the acceleration voltage of the electron beam EBS is higher than that of the electron beam EBM , the reflected electrons R15 of the electron beam EB have a higher energy than the reflected electrons R1M of the electron beam EBM Thus, it is possible for the detector to detect only the reflected electrons R15 from the electron beam EBS by utilizing the above-mentioned energy difference of the reflected electrons. In addition, since the acceleration voltage of the electron beam EB is high, the electron beam Ess is easy to focus to a narrow beam and has a low resist sensitivity, these feature being desirable for position detection. The current density of the sub-electron beam Ess should be weak enough that the resist on the wafer surface is not substantially exposed by the electron beam EBS. Thus, a field emission type electron gun or the like may be used as the electron source of the sub-electron beam EB5. On the other hand, the main electron beam EBM is used for formation of the circuit patterns on the wafer surface, and it is desired that the main electron beam EBM have a rather wide beam diameter and a high resist sensitivity. The beam shape of the main electron beam EBM may be circular or may be rectangular, and its beam diameter may be adjustable. In the electron beam exposure method of Fig. 4, by projecting the sub-electron beam EBS simultaneously or previously on the positions to be projected by the main electron beam EBM , the center of the area projected by the main electron beam EBM on the wafer surface, that is, the field center, can be detected to a high precision by means of the reflected electrons of the sub-electron beam EBS so that the above-mentioned field center can be corrected to coincide with the desired wafer surface position. The position detection by means of the reflected electrons may be carried out by using positioning marks formed beforehand on the wafer surface or using the wiring pattern formed on the wafer surface. As described above, according to the embodiment of the present invention of Fig. 4, since separate electron beams are used for exposure and for position detection, even if the diameter of the electron beam for the exposure is large, the wafer position can be detected to a high precession. Therefore, the desired patterns can be formed at correct positions on the wafer surface.

Claims: CLAIMS 1. An electron beam exposure method for use in the manufacture of a semiconductor device, characterised in that both a high acceleration voltage electron beam (EBH,EBS) and a low acceleration voltage electron beam (EB,EB) are generated and projected onto a resist layer to be exposed. 2. A method according to claim 1, in which the high acceleration voltage electron beam (EBH) is used to expose fine patterns in the resist layer to be exposed, and in which the low acceleration voltage electron beam (ebb) is used to expose coarse patterns in the resist layer. 3. A method according to claim 1, in which the high acceleration voltage electron beam (EB5) has an intensity weak enough not to cause substantial exposure of the resist layer and is used to determine the position of a workpiece (22) carrying the resist layer, and in which the low acceleration voltage electron beam (EBM) is used to expose predetermined patterns in the resist layer, the location of the patterns being determined in dependence upon the position of the workpiece as established by the high acceleration voltage electron beam (EB). 4. An electron beam exposure apparatus, characterised by the inclusion of two electron beam sources, a high acceleration voltage electron beam source (10,21), and a low acceleration voltage electron beam source (11, 20). 5. An apparatus according to claim 4, also including means (24) to detect electrons reflected from the high acceleration voltage electron beam source (21) thereby to determine the position of a workpiece (22) carrying a resist layer, and means to vary the position of the electron beam (E ) produced by the low acceleration voltage electron beam source (20) in dependence upon the position of the workpiece (22) established by the means (24). 6. An electron beam exposure method comprising the steps of: generating a high acceleration voltage electron beam (EBH) and a low acceleration voltage electron beam (EBL) in an electron beam exposure apparatus; forming fine patterns on a resist layer formed on a substrate (12) by scanning the high acceleration voltage electron beam (ebb) in one predetermined area of a surface of the resist layer; and, forming coarse patterns on the rest layer by scanning the low acceleration voltage electron beam (eel) in another predetermined area of a surface of the resist layer. 7. An electron beam exposure method comprising the steps of: generating a high acceleration voltage electron beam (EBS) and a low acceleration voltage electron beam (E ) in an electron beam exposure apparatus, the high acceleration voltage electron beam (EB5) being focused to a narrow beam diameter and having an intensity weak enough not to cause substantial exposure of the resist layer; scanning the high acceleration voltage electron beam (EBs) over the surface of a resist layer formed on a substrate; obtaining information on the position of the substrate by detecting electrons reflected from the high acceleration voltage electron beam (EBS); and, forming predetermined patterns on the resist layer by projecting the low acceleration voltage electron beam (EBM) onto the resist layer, the projection position of-the low acceleration voltage electron beam (EBM) being determined from the obtained information on the position of the substrate. 8. An electron beam exposure apparatus comprising a high acceleration voltage electron beam source (10) and a low acceleration voltage electron beam source (11), the high acceleration voltage electron beam (EBH) from the source (10) being projected onto the surface of a resist layer formed on a substrate (12) and being used for forming fine patterns on it, and the low acceleration voltage electron beam (E3L,) from the source (11) also being projected onto the surface of the resist layer and being used for forming coarse patterns on it. 9. An electron beam exposure apparatus comprising: a high acceleration voltage electron beam source (21) emitting a high acceleration voltage electron beam (EBS) for detecting the position of a resist layer formed on a substrate (22), the high acceleration voltage electron beam (EB5) being focused to a narrow beam diameter and having an intensity weak enough not to cause substantial exposure of the resist layer; a low acceleration voltage electron beam source (20) emitting a low acceleration voltage electron beam ;(EBM) for exposure of the resist layer, the low acceleration voltage electron beam (elm) being projected onto a predetermined area of the surface of the resist layer; and, means (24) for obtaining information on the position of the substrate by detecting electrons reflected from the high acceleration voltage electron beam, the obtained information of the substrate position being used for determining the projection position of the low acceleration voltage electron beam (ebb)

Inventors: ARII, KATSUYUKI, CHONAN, TSUNEHIRO, KATOH, SHINYA
Applicants: FUJITSU LIMITED
Application year: 1982
Main classification: G03F7
IPC codes: H01J37