SILICON CARBIDE POWDER MIXTURE AND PROCESS FOR PRODUCING SINTERED BODIES THEREFROM

Abstract: Silicon carbide powder mixture and process for produc­ ing sintered bodies therefrom are provided so as to give silicon carbide sintered bodies having excellent heat conduc­ tivity and electrical resistivity with high density. Said silicon carbide powder mixture can be obtained by dry blending or solution mixing of silicon carbide powder with at least one beryllium compound which can be converted to beryllium, beryllium oxide, beryllium carbide or beryllium nitride by decomposition with heating.

Description: SILICON CARBIDE POWDER MIXTURE AND PROCESS FOR PRODUCING SINTERED BODIES THEREFROM This invention relates to a mixture for producing sintered bodies having high electrical resistivity and a process for producing such sintered bodies. With advanced densification of electronic circuits in recent years, requests are growing for an insulating substrate for mounting semiconductor elements which substrate has good heat transfer properties for allowing efficient dissipation of heat generated by the semiconductor elements and which also has a thermal expansion coefficient equal to that of the semiconductor elements. Alumina sintered bodies have been popularly used as an insulating substrate material, but such alumina substrates have some serious disadvantages such as poor heat dissipativity and a high thermal expansion coefficient, which is around 80 x 10-7/ C, in comparison with silicon whose thermal expansion coefficient is on the order of 35-40x 10 ICC. Therefore, alumina sintered bodies need be improved for their wider utilization to have (1) better heat dissipativity, (2) higher insulating characteristics and (3) a lower thermal expansion coefficient approximate to that of silicon. Silicon carbide sintered bodies have a thermal expansion coefficient of around 40x 10 7/oC which is lower than that of alumina and approximate to that of silicon, and it is also known that their heat conductivity is as high as 0.1-0.2 cal/cm sec C which is three times or more larger than that of alumina. However, silicon carbide is a material well known as a semiconductor and little known as an insulating material. The present inventors have investigated insulating substrates using silicon carbide as insulator. Some substrates, however, had a disadvantage in that their heat conductivity cannot be raised above 0.1 cal/cm-sec C owing to unavailability of a sintering aid having good heat conductivity, said sintering aid being mixed when producing a silicon carbide sintered body for the purpose of bettering electrical insulating quality, which results in not meeting both requirements of high heat conductivity and excellent electrical insulating properties at the same time. The present invention has for its object to provide a mixture for producing electrically insulating silicon carbide sintered bodies and a process for producing such sintered bodies. This invention provides a mixture for producing an electrically insulating silicon carbide sintered body comprising silicon carbide as a major component and at least one beryllium compound which can be converted to beryllium, beryllium oxide, beryllium carbide or beryllium nitride by decomposition with heating. This invention also provides a process for producing an electrically insulating silicon carbide sintered body, characterized by preparing a mixture comprising silicon carbide as a major component and at least one beryllium compound which can be converted to beryllium, beryllium oxide, beryllium carbide or beryllium nitride by decomposition with heating, shaping said mixture into a green product under pressure, and sintering said green product. According to this invention, there can easily be obtained sintered bodies having, as measured at room temperature, a heat conductivity of 0.4 cal/cm.sec.DC or higher, an electrical resistivity of 107 -cm or higher and a density of 90 percent or higher of the theoretical. As the silicon carbide which is used as the principal component in this invention, there can be used silicon carbide powder which is a-silicon carbide and generally used as abrasives. Usually, it is recommended to use the silicon carbide powder of smaller particle size, with a grain number above *3,000 applied for abrasives, because the smaller the particle size, the easier is the powder to sinter, but use of the powder of greater particle size is not excluded from the scope of this invention if such powder is sinterable in the process of this invention. The powder with an average particle size of 10 pm or less, preferably 2 pm or less, is desirable. It is also possible to use Silicon carbide in place of a-silicon carbide as a part of it or as a whole. The beryllium compounds used in this invention are preferably those which are decomposed into beryllium, beryllium oxide, beryllium carbide or beryllium nitride upon heating at a temperature of 19500C or lower, more preferably l0000C or lower. The amount of the beryllium compound or compounds to be added to the silicon carbide powder is preferably within the range of 0.05 to 7.5% by weight in terms of the amount of beryllium based on the amount of silicon carbide. The use of less than 0.05% by weight of the beryllium compound is found to retard sintering and makes it difficult to obtain a density in excess of 90%. It is therefore hardly possible with such amount of beryllium to produce a sintered body having good heat transfer properties and high strength. On the other hand, the use of beryllium compound in an amount excess of 7.5% by weight results in producing a product having a thermal expansion coefficient greater than 40x 10 7/oC which is undesirable-in use of the product as an insulating substrate for silicon semiconductors. The heat conductivity of the product also becomes lower than 0.4 calXcm sec C. As for the beryllium compounds used in this invention, it is possible to employ all of those beryllium compounds which are either decomposed upon heating or reacted with silicon carbide to convert into beryllium, beryllium oxide, beryllium carbide or beryllium nitride. Typical examples of such beryllium compounds are Be (OH)2, Be (NO3)2, BeSO4, BeSO42NH3, BeCO3, Be(HCO2)2, Be4O(HCO2)6, BeC2H4, Be4O(CH3CO2)6, (NH4)2O.BeO2C2O3, (NH4)2Be(SO4)2, Be(CH3COCHCOCH3)2, and the like. These compounds may contain crystal water. Also, these beryllium compounds may be used either singly or in admixture of two or more of them. For example, BeSO4 is pyrolyzed at 11000C to yield BeO, and thus it can be used in this invention. On the other hand, beryllium compounds which are not pyrolyzed but vaporized such as BeC12, etc., are not usuable in this invention. It is important in this invention that all the beryllium compounds usable in this invention are soluble (or well-dispersible) in a solvent. Therefore, the beryllium compounds can be mixed with silicon carbide (SiC) powder uniformly by using the beryllium compounds in the form of a solution. For example, a solution of beryllium compound is mixed with silicon carbide powder to give a slurry, which is, then for example, spray dried to remove the solvent to give a raw material powder wherein the beryllium compound and silicon carbide are mixed in uniform quality. As the solvent for dissolving the beryllium compounds, there can be used water, an organic solvent such as ethanol, acetone, ether, benzene, ethylenediamine, dilute acetic acid, etc., an aqueous solution of inorganic material such as nitric acid, hydrochloric acid, etc., depending on the kind of beryllium compounds used. Preferable combinations of solvents and the beryllium compounds are ethylenediamine or an aqueous solution of nitric acid or hydrochloric acid for Be (OH)2; water or ethanol for Be (NO3)2; an aqueous solution of nitric acid or hydrochloric acid or dilute acetic acid for BeCO3.4H2O; acetone or benzene for Be4O(CH3CO2)6; ethanol, ether or benzene for Be(CH3COCHCOCH3)2; water for Be(HCO2)2; acetone or benzene for Be4O(HCO2)6; an aqueous solution of hydrochloric acid for BeSO4, etc. According to this invention, the particle size of beryllium compounds can be reduced remarkably. Thus, the sintering temperature can be lowered and a sintered body having higher density can easily be obtained. Further, since the mixture of beryllium compound and silicon carbide can be dispersed uniformly, the resulting sintered body has properties in uniform quality, particularly with slight deviations in specific resistance. Such outstanding properties cannot be expected when beryllium oxide powder is used in place of the beryllium compound used in this invention. In addition, since the presence of free carbon in an amount of 4% by weight or more in the sintered body remarkably lowers electrical insulating properties, a binder comprising an organic resin containing a metal which can react with carbon should be used. As the organic resin, a silicone resin is preferable. The silicone resin is preferably used by being diluted with an organic solvent. Further, the beryllium compounds used in this invention are those which are decomposed or reacted at a temperature below 1,950do, because the silicon carbide powder is sintered when exposed to a temperature above 1,950 C. If the beryllium compound used is pyrolyzed at a temperature above the sintering starting temperature, the resulting sintered body becomes porous due to the gas produced by the pyrolysis, and thus it is impossible to obtain a sintered body with a high density and compactness. A low density leads to not only low strength of the sintered body but also poor heat transfer properties thereof. The mixture of silicon carbide and at least one special beryllium compound can be prepared by simply mixing these components in dry state by using a conventional technique, or by mixing a solution of special beryllium compound with silicon carbide powder to give a slurry and spray drying the resulting slurry as mentioned above, or by other conventional method. The mixture is, then, shaped into a green product under pressure by using a conventional method. The sintering conditions for the beryllium compound-containing silicon carbide powder are also important. Sintering is preferably conducted in a nonoxidative atmosphere. In an oxidative atmosphere, the silicon carbide powder is oxidized at its surface and a high-density sintered body can hardly be obtained. Also, there is available no furnace material which can stand use in an oxidative atmosphere at an elevated sintering temperature above 1,800 cm. For these reasons, it is possible to oxidatively decompose the beryllium compound by heating the powder mixture or the green product thereof at a temperature of 1,000 C or lower and in which there takes place no oxidation of the silicon carbide powder. The sintering temperature used in this invention should be within the range of 1.8500 to 2,500 C, preferably 1,9000 to 2,300 C. Use of a temperature below 1,850 C makes it difficult to obtain a high-density sintered body and also results in a poor heat transfer quality of the product. On the other hand, use of a temperature above 2,500 C invites excess sublimation of silicon carbide, making it hardly possible to obtain a compact sintered body. When hot pressing is employed for pressing the specimen during sintering, the upper limit of the pressure loading depends on the die material used. Usually, graphite-made dies are preferably used. In the case of graphite-made dies, the pressure may be applied to a maximum of about 700 kgicm2. Usually, however, a high-density sintered body can also be obtained without applying any pressure. It is possible to produce a dense sintered body with no pressure application by using silicon carbide powder of submicron size. The optimum sintering time is decided according to various conditions involved in the operation such as the particle size of the powder mixture, the temperature and pressure applied during the sintering. Generally, the smaller the particle size of the powder used and the higher the sintering temperature and also the higher the pressure applied, the shorter time is required for attaining desired densification. No definite disclosure has yet been made of the mechanism that gives a highly heat-conductive and insulating sintered body from sintering of a silicon carbide powder containing a beryllium compound, but the following qualitative explanation seems to be persuasive. Silicon carbide is a covalent bonding material like diamond or beryllia. In these materials, unlike in metals, heat is transferred not by electronic conduction but by means of phonons through lattice vibration, and hence these materials have good heat transfer properties although they have insulating characteristics. The high-purity single crystals of silicon carbide are insulating and also have a heat conductivity of as high as 1 cal/cm.sec.CC. However, for the reasons that in the case of ordinary sintered bodies there can hardly be obtained those having a heat conductivity of 0.4 cal/cm sec C as their heat transfer properties are adversely affected by scattering of phonons at grain boundaries or by impingement of the impurity elements entrapped in the silicon particles against phonons, that when aluminum or such is entrapped in silicon carbide, there is formed a P type semiconductor to elevate the electric conductivity, making it impossible to obtain a sintered body having an electric insulation resistance of 107 Q-cm or higher, that beryllium, even when sintered with silicon carbide, causes no increase of carrier which is an electrical conductivity elevating factor, and that scattering of phonons by beryllium considered to exist at the grain boundaries is limited and resistance is increased by the formation of barriers at grain boundaries, it is considered that the berylliumcontaining sintered body has better heat transfer properties and more excellent electrical insulating properties than the ordinary silicon carbide sintered bodies. Also, beryllium serves as a sintering aid for silicon carbide and thus conduces to the formation of a dense sintered body. The sintered body with a low density cannot provide a sintered product with high heat conductivity as heat transfer is impaired by the pores therein. Thus, beryllium functions to assist sintering of silicon carbide and also proves beneficial for bettering the electrical insulating properties and not causing a reduction of heat conductivity of the produced sintered body. Therefore, beryllium added needs be dispersed uniformly in the silicon carbide powder used as the principal component. By addition of a beryllium compound (or compounds) which is heat-decomposed into beryllium, beryllium oxide, beryllium carbide or beryllium nitride, as compared with the case of mixing beryllium in the form of metallic beryllium or beryllium oxide in the silicon carbide powder, sintering of silicone carbide is more expedited owing to the fine powder produced by the decomposition or active beryllium or beryllium oxide just after the decomposition. The present invention embraces within its scope the use of the starting powder mixture which contains not only a heat-decomposable beryllium compound or compounds but also a small quantity of elemental beryllium, beryllium oxide, beryllium carbide and/or beryllium nitride. Further, it should be noted that a sintered body having high electrical insulating properties can only be obtained by using SiC powder containing as an impurities 0.4% by weight or less of free carbon and 0.1% by weight of Al, or by making the free carbon content in the sintered body 0.4% by weight or less derived from a binder. Example 1 Beryllium hydroxide Be (OH)2 was mixed in amounts ranging from 0.14 to 72% by weight (0.03 to 15% in terms of Be basis) in silicon carbide powder with an average particle size of 2 pm to prepare various powder mixtures as shown in Table 1. Then the powder mixtures were molded under a pressure of 1,000 kg/cm2. The moldings had powder densities ranging from 1.60 to 1.67 g/cm3 (relative density corresponding to 50 to 52% of the theoretical of silicon carbide). Each molding was placed in a graphite die and hot pressed in vacuo (1 x 10 5 to 1 x 10 3 Torr) to obtain a sintered body. The pressure of 300 kg/cm2 was applied at room temperature. Heating was made from room temperature to 2,0000C in about 2 hours, and after one hour hold at 2,000CC, the heating power source was cut off to effect cooling. The pressure was released after the temperature dropped below 1,500 cm. The relation between the properties of the thus produced silicon carbide sintered bodies and the beryllium content is shown in Table 1. Impurities in the starting SiC powder were B 17 ppm., Mg 17 ppm, Al 87 ppm, Ca 51 ppm, Ti 1290 ppm, V 540 ppm, Cr 150 ppm, Mn 7 ppm, Fe 650 ppm, Co 11 ppm, Ni 240 ppm, Zn 1 ppm, Na 90 ppm, free Si 0.57 wt.%, free C 0.08 wt.% and SiO2 1.4 wt.%. Tabele 1 EMI13.1 Run <SEP> Amount <SEP> Relative <SEP> Heat <SEP> conductivity <SEP> Electrical <SEP> Coefficient <SEP> of <tb> No. <SEP> of <SEP> Be <SEP> density <SEP> (cal/cm#sec# C) <SEP> resistivity <SEP> thermal <SEP> expansion <tb> <SEP> (%) <SEP> (%) <SEP> (#-cm) <SEP> 10-6/ C <tb> <SEP> 1 <SEP> 0.03 <SEP> 91 <SEP> 0.15 <SEP> 1012 <SEP> 3.3 <tb> <SEP> 2 <SEP> 0.05 <SEP> 97 <SEP> 0.40 <SEP> 1012 <SEP> 3.3 <tb> <SEP> 3 <SEP> 0.1 <SEP> 98 <SEP> 0.60 <SEP> 1013 <SEP> 3.3 <tb> <SEP> 4 <SEP> 0.2 <SEP> 98 <SEP> 0.65 <SEP> > 1013 <SEP> 3.3 <tb> <SEP> 5 <SEP> 0.5 <SEP> 99 <SEP> 0.65 <SEP> > 1013 <SEP> 3.3 <tb> <SEP> 6 <SEP> 1.0 <SEP> 99 <SEP> 0.65 <SEP> > 1013 <SEP> 3.3 <tb> <SEP> 7 <SEP> 2.0 <SEP> 99 <SEP> 0.65 <SEP> > 1013 <SEP> 3.3 <tb> <SEP> 8 <SEP> 3.0 <SEP> 99 <SEP> 0.60 <SEP> > 1013 <SEP> 3.4 <tb> <SEP> 9 <SEP> 5.0 <SEP> 99 <SEP> 0.55 <SEP> > 1013 <SEP> 3.5 <tb> 10 <SEP> 7.0 <SEP> 99 <SEP> 0.50 <SEP> > 1013 <SEP> 3.7 <tb> 11 <SEP> 7.5 <SEP> 99 <SEP> 0.50 <SEP> > 1013 <SEP> 3.9 <tb> 12 <SEP> 10.0 <SEP> 99 <SEP> 0.45 <SEP> > 1013 <SEP> 4.2 <tb> 13 <SEP> 15.0 <SEP> 99 <SEP> 0.40 <SEP> > 1013 <SEP> 4.5 <tb> The products, with the amounts of beryllium used being 0.05 to 7.5% by weight, showed a heat conductivity 0.4 cal/cm.sec.CC or more, an electrical resistivity of 1012 -cm or more and a thermal expansion coefficient of 3.3- 3.9 x 10-6/ C. Example 2 Beryllium nitrate (Be(NO3)2) was added in amounts ranging from 0.44 to 150% by weight (0.03 to 10% by weight in terms of Be) to the same silicon carbide powder as used in Example 1, and each mixture was added with a 10% by weight of xylene solution containing 25% by weight of silicone resin as binder for molding and mixed in a mixing and grinding machine with stirring. The mixtures were molded and hot pressed in the same way as in Example 1 to obtain sintered bodies. The hot pressing conditions and the properties of the obtained sintered bodies are shown in Table 2. Tabele 2 EMI15.1 <SEP> Hot <SEP> pressing <tb> Run <SEP> Amount <SEP> conditions <SEP> Relative <SEP> Heat <SEP> conduc- <SEP> Resis- <SEP> Coefficient <tb> No. <SEP> of <SEP> Be <SEP> density <SEP> tivity <SEP> tivity <SEP> of <SEP> thermal <tb> <SEP> (5) <SEP> Temper- <SEP> Pres- <SEP> Time <SEP> expansion <tb> <SEP> ature <SEP> sure <SEP> (%) <SEP> (cal/cm#sec# C) <SEP> (#-cm) <tb> <SEP> ( C) <SEP> (kg/cmê) <SEP> (hr) <SEP> (10-6/ C) <tb> <SEP> 1 <SEP> 0.03 <SEP> 2000 <SEP> 300 <SEP> 1 <SEP> 85 <SEP> 0.30 <SEP> 1013 <SEP> 3.3 <tb> <SEP> 2 <SEP> 0.05 <SEP> 2000 <SEP> 300 <SEP> 1 <SEP> 95 <SEP> 0.42 <SEP> 1013 <SEP> 3.3 <tb> <SEP> 3 <SEP> 0.15 <SEP> 1900 <SEP> 300 <SEP> 1 <SEP> 98 <SEP> 0.65 <SEP> > 1013 <SEP> 3.3 <tb> <SEP> 4 <SEP> 1.0 <SEP> 1800 <SEP> 300 <SEP> 1 <SEP> 80 <SEP> 0.20 <SEP> > 1013 <SEP> 3.3 <tb> <SEP> 5 <SEP> 1.0 <SEP> 1900 <SEP> 300 <SEP> 1 <SEP> 96 <SEP> 0.50 <SEP> > 1013 <SEP> 3.3 <tb> <SEP> 6 <SEP> 1.0 <SEP> 2000 <SEP> 200 <SEP> 1 <SEP> 99 <SEP> 0.67 <SEP> > 1013 <SEP> 3.3 <tb> <SEP> 7 <SEP> 2.0 <SEP> 1800 <SEP> 300 <SEP> 1 <SEP> 85 <SEP> 0.30 <SEP> > 1013 <SEP> 3.3 <tb> <SEP> 8 <SEP> 2.0 <SEP> 1900 <SEP> 300 <SEP> 0.5 <SEP> 97 <SEP> 0.60 <SEP> > 1013 <SEP> 3.4 <tb> <SEP> 9 <SEP> 2.0 <SEP> 2100 <SEP> 300 <SEP> 0.5 <SEP> 99 <SEP> 0.67 <SEP> > 1013 <SEP> 3.4 <tb> 10 <SEP> 2.0 <SEP> 2300 <SEP> 300 <SEP> 1 <SEP> 99 <SEP> 0.65 <SEP> 1013 <SEP> 3.4 <tb> 11 <SEP> 5.0 <SEP> 2100 <SEP> 300 <SEP> 1 <SEP> 99 <SEP> 0.60 <SEP> > 1013 <SEP> 3.7 <tb> 12 <SEP> 10.0 <SEP> 2100 <SEP> 300 <SEP> 1 <SEP> 99 <SEP> 0.35 <SEP> > 1013 <SEP> 4.2 <tb> 13 <SEP> 10.0 <SEP> 1800 <SEP> 300 <SEP> 1 <SEP> 80 <SEP> 0.30 <SEP> > 1013 <SEP> 4.2 <tb> Addition of beryllium in amounts ranging from 0.05 to 5% by weight provided the silicon carbide sintered bodies having a heat conductivity of 0.4 cal/cm.sec. C, an electrical resistivity of 1013 fl-cm and a thermal expansion coefficient of 3.3-4.0 x 10-6/ C. However, at the sintering temperature of 1,8000C, the relative density of the sintered body was below 90% and hence there could not be obtained the sintered body with desired heat conductivity. Example 3 Beryllium sulfate (BeSO4), beryllium oxalate and other beryllium compounds-were added respectively as shown in Table 3 to the same silicon carbide powder as used in Example 1 of 0.5-10 um particle size, and the mixtures were molded and sintered in the same manner as described in Example 1 to obtain sintered bodies. The amounts of the beryllium compounds added (the amounts being determined in terms of beryllium) and the properties of the produced silicon carbide sintered bodies are shown in Table 3. Addition of two or more beryllium compounds could provide the silicon carbide sintered bodies having a heat conductivity above 0.4 cal/cm.sec.CC, an electrical resistivity of 1013 fl-cm and a thermal expansion coefficient of 3.3-4.0 x 10 /OC. Tabele 3 EMI17.1 <SEP> Amount <SEP> of <SEP> Be <SEP> added <SEP> Rela- <SEP> Heat <SEP> con- <SEP> Elect- <SEP> Coefficient <tb> Run <SEP> tive <SEP> ductivity <SEP> rical <SEP> of <SEP> termal <tb> No. <SEP> Amount <SEP> Amount <SEP> den- <SEP> resis- <SEP> expansion <tb> <SEP> Compound <SEP> (%) <SEP> Compound <SEP> (%) <SEP> sity <SEP> (cal/cm#sec# C) <SEP> tivity <tb> <SEP> (%) <SEP> (#-cm) <SEP> (10-6/ C) <tb> <SEP> 1 <SEP> BeSO4 <SEP> 0.5 <SEP> Be(HCO2)2 <SEP> 0.5 <SEP> 99 <SEP> 0.60 <SEP> 1013 <SEP> 3.4 <tb> <SEP> 2 <SEP> BeSO4 <SEP> 1.0 <SEP> BeC2H4 <SEP> 0.5 <SEP> 98 <SEP> 0.63 <SEP> > 1013 <SEP> 3.4 <tb> <SEP> 3 <SEP> Be4O(HCO2)6 <SEP> 0.5 <SEP> BeC2H42)2 <SEP> 0.5 <SEP> 98 <SEP> 0.60 <SEP> > 1013 <SEP> 3.4 <tb> <SEP> 4 <SEP> BeH4(PO4)2 <SEP> 1.0 <SEP> Be4O(CH3CO2)6 <SEP> 0.5 <SEP> 99 <SEP> 0.63 <SEP> > 1013 <SEP> 3.4 <tb> <SEP> 5 <SEP> BeHPO4 <SEP> 1.0 <SEP> (NH4)2O#BeO#2C2O3 <SEP> 0.5 <SEP> 98 <SEP> 0.55 <SEP> 1013 <SEP> 3.5 <tb> <SEP> 6 <SEP> Be2P2O7 <SEP> 0.5 <SEP> Be3N2 <SEP> 0.5 <SEP> 99 <SEP> 0.65 <SEP> > 1013 <SEP> 3.4 <tb> <SEP> 7 <SEP> (NH4)2Be(SO4)2 <SEP> 1.0 <SEP> Be2C <SEP> 0.5 <SEP> 98 <SEP> 0.60 <SEP> > 1013 <SEP> 3.4 <tb> <SEP> 8 <SEP> BeSO4 <SEP> 0.5 <SEP> Be3N2 <SEP> 0.5 <SEP> 99 <SEP> 0.65 <SEP> > 1013 <SEP> 3.4 <tb> Example 4 To each silicon carbide powder having the same impurities as described in Example 1 and having an average particle size of 2 pm, each solution obtained by dissolving beryllium acetylacetonate (Be(CH3COCHCOCH3)2) in ethanol was added and mixed. The amount of beryllium compound added was 0.1 to 5% by weight in terms of Be basis based on the weight of silicon carbide to give various kinds of the solutions. Further, a xylene solution containing a 25% by weight of silicone resin as a binder was added to each resulting solution in an amount of 10% by weight to give a slurry. The slurry was spray dried to give a powder having a constant particle size, while removing the ethanol and xylene. The resulting powder was molded under a pressure of 1000 kg/cm2 to give a green product. The green product was placed in a graphite die and heated at 1500 CC in vacuo (1 x 10 5 to 1 x 10 3 Torr) to pyrolyze the beryllium compound and silicone resin. Subsequently, the pressure was raised to 300 kg/cm2 and the temperature was also raised to 20500C and hot pressing was carried out under such conditions for about I hour. The pressure was reduced to atmospheric pressure after the temperature became 1500 CC or lower. The thus produced silicon carbide sintered bodies had relative densities of 98% or more, coefficients of thermal expansion of 0.5 to 0.65 cal/cm.sec.CC and electrical resistivities of 1012 ohm-cm or more. Example 5 To each silicon carbide powder having the same impurities as described in Example 1 and having a particle size of 0.02 to 0.2 ltm, each aqueous solution containing 10% by weight of beryllium nitrate was added in an amount of 5 to 270% by weight (0.036 to 1.8% by weight in terms of the Be basis) based on the weight of silicon carbide and mixed. The water was removed at 150 CC to give powders. To 100 g of the resulting powder, 10 ml of a xylene solution containing 25% by weight of silicon resin was added and mixed in a mortar and the resulting mixture was granulated by a conventional method. The granulated powder was molded under a pressure of 1 ton/cm2 to give a green product. The green product was placed in a furnace and heated at l5000C in an atmosphere of argon for 1 hour, while pyrolyzing the beryllium nitrate and silicon varnish. Subsequently, the sintering was conducted at 22000C in an argon atmosphere for 1 hour. The thus produced silicon carbide sintered bodies had the following properties: Relative density 93 to 98% Heat conductivity 0.45 to 0.60 cal/cm. sec 0C Electrical resistivity 1012 ohm.cm or more (at electric field of 10 V/cm) beryllium nitride by decomposition with heating, shaping said mixture into a green product under presusre, and sintering said green product. 6. A process according to Claim 5, wherein the mixture is obtained by dry blending of silicon carbide powder and the beryllium compound powder. 7. A process according to Claim 5, wherein the mixture is obtained by mixing a solution of a beryllium compound which can be converted to beryllium, beryllium oxide, beryllium carbide or beryllium nitride by decomposition with heating dissolved in a solvent with silicon carbide powder, followed by drying and granulation. 8. A process according to Claim 7, wherein the solvent is water, an organic solvent or an aqueous solution of inorganic material. 9. A process according to Claim 5, wherein the beryllium compound is at least one member selected from the group consisting of Be (OH)2, Be (NO3)2, BeSOR4, BeSO4 2NH3, Beck3, Be (HCO2)2, Be4O (HCO2)6, BeC2H4, Be4O(CH3CO2)61 (NH4) 2O-BeO-2C203, (NH4)2Be(SO4)2, and Be (CH3COCHCOCH3) 2 10. A process according to Claim 5, wherein the mixture further contains a silicone resin as a binder. 11. A process according to Claim 7, wherein the beryllium compound is Be (OH)2 and the solvent is ethylenediamine or an aqueous solution of nitric acid or hydrochloric acid. 12. A process according to Claim 7, wherein the Table 4 EMI21.1 Run <SEP> Beryllium <SEP> compound <SEP> Electrical <SEP> resistivity <SEP> Heat <SEP> conduc- <SEP> Coefficient <tb> No. <SEP> Kind <SEP> Amount <SEP> Amount <SEP> (ohm#cm) <SEP> tivity <SEP> of <SEP> thermal <tb> <SEP> (wt <SEP> %) <SEP> of <SEP> Be <SEP> Average <SEP> (cal/cm#sec# C) <SEP> expansion <tb> <SEP> (wt <SEP> %) <SEP> value <SEP> Deviations <SEP> (x10-7/ C) <tb> 1 <SEP> BeO <SEP> 2 <SEP> 0.72 <SEP> 7x1013 <SEP> 5x1012-4x1014 <SEP> 0.65 <SEP> 36 <tb> 2 <SEP> Be(NO3)2 <SEP> 10.6 <SEP> 0.72 <SEP> 7x1013 <SEP> 3x1013-5x1014 <SEP> 0.65 <SEP> 35 <tb> 3 <SEP> Be(OH)2 <SEP> 3.5 <SEP> 0.72 <SEP> 6x1013 <SEP> 2x1013-5x1014 <SEP> 0.66 <SEP> 35 <tb> 4 <SEP> Be(C5H7O2)2 <SEP> 16.6 <SEP> 0.72 <SEP> 6x1013 <SEP> 2x1013-4x1014 <SEP> 0.64 <SEP> 36 <tb> 5 <SEP> BeO <SEP> 0.7 <SEP> 0.25 <SEP> 5x1013 <SEP> 5x1011-5x1014 <SEP> 0.62 <SEP> 33 <tb> 6 <SEP> Be(NO3)2 <SEP> 3.7 <SEP> 0.25 <SEP> 5x1013 <SEP> 1x1013-4x1014 <SEP> 0.63 <SEP> 33 <tb> 7 <SEP> Be(OH)2 <SEP> 1.2 <SEP> 0.25 <SEP> 4x1013 <SEP> 2x1013-3x1014 <SEP> 0.62 <SEP> 33 <tb> 8 <SEP> BeO <SEP> 0.3 <SEP> 0.1 <SEP> 3x1012 <SEP> 1x1010-7x1013 <SEP> 0.60 <SEP> 34 <tb> 9 <SEP> Be(NO3)2 <SEP> 1.5 <SEP> 0.1 <SEP> 2x1013 <SEP> 5x1012-1x1014 <SEP> 0.61 <SEP> 34 <tb> 10 <SEP> Be(OH)2 <SEP> 0.5 <SEP> 0.1 <SEP> 1x1013 <SEP> 3x1012-8x1013 <SEP> 0.60 <SEP> 34 <tb> 11 <SEP> Be(C5H7O2)2 <SEP> 2.3 <SEP> 0.1 <SEP> 8x1012 <SEP> 3c1012-5x1013 <SEP> 0.60 <SEP> 34 <tb> Note) Run Nos. 1, 5 and 8 are Comparative Examples.

Claims: WHAT IS CLAIMED IS: 1. A mixture for producing an electrically insulating silicon carbide sintered body, characterized by comprising silicon carbide containing 0.4% by weight or less of free carbon and 0.1% by weight or less of aluminum as impurities as a major component and at least one beryllium compound which can be converted to beryllium, beryllium oxide, beryllium carbide or beryllium nitride by decomposition with heating. 2. A mixture according to Claim 1, wherein the amount of beryllium compound is 0.05 to 7.5% by weight in terms of the amount of beryllium based on the amount of silicon carbide. 3. A mixture according to Claim 1, wherein the beryllium compound is at least one member selected from the group consisting of Be(OH)2, Be(NO3)2, BeSO4, BeSO42NH3, BeCO3, Be(HCO2)2, Be4O(HCO2)6, BeC2H4, Be4O(CH2CO2)@ (HN4)2O.BeO.2C2O2, (NH4)2Be(SO4)2, and Be(CH3COCHCOCH 32 4. A mixture according to Claim 1, which further contains a silicone resin as a binder. 5. A process for producing an electrically insulating silicon carbide sintered body, characterized by preparing a mixture comprising silicon carbide containing 0.4% by weight or less of free carbon and 0.1% by weight or less of aluminum as impurities as a major component and at least one beryllium compound which can be converted to beryllium, beryllium oxide, beryllium carbide or beryllium nitride by decomposition with heating, shaping said mixture into a green product under presusre, and sintering said green product. 6. A process according to Claim 5, wherein the mixture is obtained by dry blending of silicon carbide powder and the beryllium compound powder. 7. A process according to Claim 5, wherein the mixture is obtained by mixing a solution of a beryllium compound which can be converted to beryllium, beryllium oxide, beryllium carbide or beryllium nitride by decomposition with heating dissolved in a solvent with silicon carbide powder, followed by drying and granulation. 8. A process according to Claim 7, wherein the solvent is water, an organic solvent or an aqueous solution of inorganic material. 9. A process according to Claim 5, wherein the beryllium compound is at least one member selected from the group consisting of Be(OH)2, Be (NO3)2, BeSO4, BeSO42NH3, BeCO3, Be(HCO2)2, Be4O(HCO2)6, BeC2H4, Be4O(CH3CO2)6, (NH4) 2O-BeOs2C203, (NH4)2Be(SO4)2, and Be (CH3COCHCOCH3)2. 10. A process according to Claim 5, wherein the mixture further contains a silicone resin as a binder. 11. A process according to Claim 7, wherein the beryllium compound is Be(OH)2 and the solvent is ethylenediamine or an aqueous solution of nitric acid or hydrochloric acid. 12. A process according to Claim 7, wherein the beryllium compound is Be (NO3)2 and the solvent is water or ethanol. 13. A process according to Claim 7, wherein the beryllium compound is BeCO3 4H20 and the solvent is an aqueous solution of nitric acid or hydrochloric acid or dilute acetic acid. 14. A process according to Claim 7, wherein the beryllium compound is Be4b(CH3CO2)6 and the solvent is acetone or benzene.15. A process according to Claim 7, wherein the beryllium compound is Be(CH3COCHCOCH3)2 and the solvent is ethanol, ethyl ether or benzene. 16. A process according to Claim 7, wherein the beryllium compound is Be(HCO2)2 and the solvent is water. 17. A process according to Claim 7, wherein the beryllium compound is Be4O(HCO2)6 and the solvent is acetone or benzene. 18. A process according to Claim 7, wherein the beryllium compound is BeSO4 and the solvent is an aqueous solution of hydrochloric acid. 19. A process according to Claim 5, wherein the green product is heated at a temperature of 1950 CC or lower for pyrolyzing the beryllium compound to beryllium, beryllium oxide, beryllium carbide or beryllium nitride prior to sintering. 20. A process according to Claim 19, wherein the green product is heated at a temperature of 1000 C or lower in air. 21. A process according to Claim 5, wherein the sintering is conducted by pressureless sintering. 22. A process according to Claim 5, wherein the sintering is conducted by hot pressing.

Inventors: ASAI, TADAMICHI, MATSUSHITA, YASUO, NAKAMURA, KOSUKE, OGIHARA, SATORU, OKOSHI, TOKIO, TAKEDA, YUKIO
Applicants: HITACHI, LTD.
Application year: 1982
Main classification: C04B35
IPC codes: H05K7, C04B35, H01B3, H01L23