FIELD EFFECT TRANSISTOR

Abstract: A short-channel field effect transistor including a stan­ dard tip implant type of source (12, 40, 56) and drain (14, 42, 58) each disposed in the surface of a semiconductor; a gate electrode (30, 46) positioned upon the semiconductor be­ tween the source and drain, and control plugs (24, 26, 52, 54, 62, 64) contiguous with the source and drain for eliminating substrate punch-through currents without substantially in­ creasing the device junction capacitance.

Description: Field effect transistor lllis invention relates to an improved short channel field effect transistor having a control plug positioned between the source and drain regions for eliminating the deleterious effects of substrate punch-through currcnss, without excessive junction capacitance. The desire to achieve very large scale integrated (VLSI) circuits including upwards of 300,000 metal oxide semiconductor field effect transistors (MOSFH) and other logic devices on a single small silicon area ("chip") has led to an unrelenting search for approaches to diminish device size. As improvements are made, it will be possible to fabricate larger, sclf-contained, electronic systems on a chip which will have greater electronic switching capacity, will cost less per function, will be capable of performing more and more complex functions, will use less power and will be able to perform these functions in a shorter time. It had been thought at one time that it would only be necessary to proportionally reduce all the device dimensions and voltage levels and to appropriately modify doping levels. Initially1 this approach was satisfactory. However, as will become apparent, the mere#scaling down of all the elemental dimensions of the device, in and of itself, quickly leads to problems which detract from the performance of the logic devices and may even prevent their operatiorL In the conventional MOSFET device illustrated in Figure 1 of the accompanying drawings there is provided a monocrystalline, or lightly doped, semiconductor supporting substrate, of high bulk resistivity, of either the p or n conductivity type. Two spaced heavily doped, low resistivi3t regions (source and drain) of the conductivity type opposite to the substrate bulk are formed within the substrate by selective diffusion of appropriate dopants. Typically, the distance separating these two disused regions is on the order of 1 Jlrm A thin conductive layer (the gate), of polysilicon or suitable metal, such as aluminurn, overlies the area between the source and drain regions but is electrically insulated from them and the substrate by a thin dielectric layer of silicon dioxide. nun'hen a dielectric material other than silicon dioxide is used, the device may be termed a MlsFRr. Throughout this document, whenever the term MOSFEr is used, it is contemplated that the terrn MISFRr shall be equivalent, unless stated otherwise. The single device is connected to other devices in the circuit by ohmic contacts, usually of metal, connected to the low resistivity source and drain regions. It is made operative by connecting appropriate potential sources to the source, gate arid drain, relative to the substrates The gate serves as the control element of the device. No transverse current will flow through the structure between the source and the drain junctions when the gate voltage is below threshold. However, optimally, when the desired gate-to-source switching voltage (gate threshold voltage) is applied to the gate. an inversion layer of opposite conductivity type will be induced in the substrate directly below the gate, providing a conductive path or channel, between the source and drain regions (as represented by erosshatcliing in Figure 2 and the subsequent drawings, for ease of identification). This normally 'OFF" type of operation, wherein the current carrying surface channel is formed by application of a voltage to the gate, is referred to as the enhancement" mode. When the device is normally 'sON", and a conductivity charnel is formed ffirough the substrate between the source and drain regions at zero gate voltage, and application of a gate-to-source voltage of appropriate magnitude and polarit# decreases the concentration of charge carriers in the channel to pinch-off current flow1 the type of operation is referred to as the "depletion" mode. The beneficial results attainable by decreasing the device size through a shorter channel length between source and drain have been accompanied by problems. A major performance limitation encountered, as the channel length is decreased, is punch-through This phenomenon subverts the beneficial operation of the device by substantially decreasing, and in some cases eliminating, the control function performed by the gate. Punch-through occurs as a depletion region widens around the drain, in all directions, under the influence of the increasing drain voltages (as represented by the family of phantom lines in Figure 2), into the relatively lightly doped substrate bulk. #'hen the drain voltage is sufficiently high, the grouting drain depletion region overlaps with the depletion region around the source (as shown by the dotted lines in Figure 2) and charge carriers can be injected directly from the source into the drain depletion region where they are then swept by the electric field over to the drain. In order to diminish depletion regions and minimize punch-through in short channel devices, the channel suubstrate region conductivity is increased. However, while decreasing the depletion region, the heavy doping (which extends to the junction depths) also increases the junction capacitance, thus slowing down the switching speed of the device. Thus, good device design usually dictates the proper balancing of doping levels and locations to minimize the depletion region and the junction capacitance while allowing a minimum length for the channeL Another known approach to diminish the deicterious effect of the depletion region is illustrated in Figure 3 wherein the source and drain regions are formed as extremely shallow diffusions within the substrate. fly so doing, while the depletion region will grow as just described, the growth will extend primarily beneath the source and drain junctions into the substrate bulk and not between these junctions. J)unch.through will not lake place. This device eonstuction, while succeeding in its primary purpose, causes another problem to arise, namely, it is difficult to make a good ohmic contact with the extremely shallow junctions without the occurrence of a spike or short circuit directly from the electrode to the substrate. A prior approach which has been generally successful in diminishing the punchthrough and junction capadtance is shown in Figure 4 and is disclosed in U.S. Patent No. 4,011,576. The MOSFEF device shown is configured with source and drain junctions cach formed with a heavily doped shallow diffusion portion (the tip), between which there is a relatively short channel, and a lightly doped deep dilTusion portion. The spacing between the deep diffusion portions is made large enough so that even as the depletion region may become large, punch-through will be avoided. Similarly, the MISER taught in U.S. Patent No. 4,080,618 includes a tip implant structure which allows the channel beneath the gate to be short while simultaneously allowing the deep diffusion portions to be moved apart from one another to help eliminate depletion region punch-through. It has been found, however, that this dcsign approach will also find its limit as the channel is made shorter and the device is made smaller. The known constructions described above have required a delicate balance between junction spacings and doping levels in order to prevent punch-through and to minimize junction capacitance. However, as device dimensions are continuously made smaller, the problems are exacerbated and balancing is not entirely successfuL This invention aims at providing a short channel field effect transistor designed to have an even-shorter channel between source and drain and which eliminates the need to balance the critical device parameters, as heretofore required, while achieving the desired results. It does this by the introduction of another diffusion in the form of a higher doped plug or stopper, of the same conductivity type as the substrate, beneath the shallow diffusions, or tips, and contiguous to the front face of the deep diffusions, to provide a shield against the flow of current from the source to the drain, in the deep diffusion area where punch-through is likely to occur. A more complete understanding of the present invention and its advantages may be obtained by reference to the following description taken in conjunction with the accompanying drawings in which: Figure 1 is a side sectional view showing the conventional MOSFEl' device known to the prior art; Figure 2 is a view of the prior art device of Figure 1 showing the inversion layer, the depletion region and the punch-thrnugh effect; Figure 3 is a side sectional view of a prior art shallow diffusion MOSFEF device; Figure 4 is a side sectional view of a prior art tip implant MOSFEF device; Figure 5 is a side sectional view of the enhancement mode MOSFEF device of the present invention; ; Figure 6 is an enlarged sectional view of the plug diffusion of Figure 5; Figure 7 is a side sectional view of the depletion mode MOSFEF device of the present invention; Figure 8 is a side sectional view of an alternative embodiment of the MOSFEI device of the present invention wherein the active elements are disposed upon an insulating substrate. The prior art devices shown in Figures 1 through 4 of the drawings have been generally described in the background portion of this disclosure. The novel device of the present invention will now be described with reference to Figures S through 7. The embodiment of this invention as illustrated in Figure 5 represents an enhancement mode type of device which is normally "OFF". It comprises a bulk substrate 10 of p-type monocrystalline silicon having a low dopant concentration of approximately 1015cm¯3. Two N+type diffused junctions 12 and 14, disposed in the substrate 10, act as the source and drain, respectively. Each diffused junction 12 and 14 includes a deep difFusion region 16 and 18 extending to a depth of approximately 0.7 gm and a shallow diffusion region, or tip, 20 and 22 extending to a depth considerably less than 0.7 Jlm. The dopant concentration of each of these regions is selected to obtain the desired beneficial results and to minimize the deleterious results, as described above. Thus, deep diffused regions 16 and 13 are optimized to have high conductivity for interconnect and contacting and may be doped with an appropriate material, such as arsenic or phosphorus, to a surface doping density of approximately lO19cm 3. Similarly, the shallow diffused regions 20 and 22 are optimized for extreme shallowness and may be doped with a suitable material, such as arsenic, to a surface doping density of approximately 1016crn#3. A channel. having a length which may be as short as 0.5 ym, extends between the facing surfaces of tips 20 and 22. Two relatively heavily doped P+ plugs or stoppers 24 and 26 are diffused beneath the tips 20 and 22. The plugs may be suitably doped with boron to a doping concentration of approximately 1017cm 3. A thin dielectric layer 23, of silicon dioxide or other suitable insulating material, having a thickness of about 0.03 pm is provided on the surface of the substrate extending from the tip regions 20 and 22 of source 12 and drain 14. A conductive layer 30 of suitable interconnect material, such as heavily doped polysilicon or aluminum, is prided over the dielectric layer 23, to a thickness of about S 1lem. Ohmic contacts represented by leads 32 and 34 to the source 12 and drain 14. respectively, overlie the deep diffusion zones 16 and 18. The method taught by Jecmen in U.S.- Ratent No. 4,198,250 or a similar method may be utilized advantageously to form the source and drain, as illustrated herein, including a deep diffusion portion and a shallow diffusion portion. The plugs 20 and 22 may then be formed by an implant doping of the suitably selected dopant in a region substantially coextensive with the source and drain, as illustrated in Figure 6. It is important that the net effect of the plug implant doping ruses the deep junction 16 and tip 20 to remain N+, while the plug is made P+. Two factors are important in positioning the plugs during device fabrication. First, the facing portions of the tips 20 and 22 must remain unblocked in order to allow the inversion layer 36 to be formed directly below the gate 30 and second, the depth of diffusion of the plugs must be slightly shallower than the deep diffusion regions 16 and 13. If the plug difibsions were made deeper than the source and drain deep diffusion regions, the ovcrall device junction capacitance at the interface between these N+ doped regions )6 and 13 and the heavily doped P+ plugs would increase to an unacceptable leveL In operation, this novel device allows for shorter channel lengths than have heretofore been reliably achievable in this type of logic device. The improved configuration independently combats the problem of punch-through without substantially increasing the overall device junction capacitance, as has been the case with selectively doped known prior an devices. If desired, the Lips may be more heavily doped to further fight punch-through. Of course, as has been described, such doping will have the effect of raising the junction capacitance at the tip-plug interface. However, as the tips represent such a small portion of the overall device area, notwithstanding that the junction capacitance will be high in this limited region, its effect on the operation of the device will be negligible. Simultaneously, the deep diffusion areas 16 and 18 may interface with the lightly doped substrate, thus substantially decreasing the junction capacitance in this major area portion of the device Although this arrangement will enhance the growth of depletion regions, the plugs will act as a shield against the growth of the depletion regions from those portions of the deep difFusion areas facing one another. Thus, as will be observed, in Figure 5, the depletion region (represented by the phantom lines) will be confined to grow only below the deep diffusion areas, where it will have no effect on punch-through. Another embodiment of the invention is shown in Figure 7. This represents a depletion mode type of device which is normally "ON", i.e., current normally flows between the source and drain when the gate voltage is below threshold The application of sufficient gate voltage, of the proper polarity, will pinch off current flow The device comprises a p-type substrate 38 in which N source and drain diffusion 40 and 4Z respectively, each including shallow and deep areas, are formed. An n-type doped channel region 44 spans the region between source and drain underlying a gate 46, comprised of an oxide layer or other insulating layer 48 and a conductive layer 50 overlying the substrate 36. Heavily doped P+ plugs 52 and 54, similar to those disclosed in the embodiment of Figures 5 and 6, underlie the shallow diffusion areas of source and drain and extend down to the substrate 38. In operation, when the gate 46 carries a switching potential, an inversion layer 56 is formed as the n-type area 44 thereunder is converted to p-type and conduction is shut off. In the absence of the plugs 46 and 48, pinch-ofF current control is inherently slow and generally requires higher gate voltages. The reason therefor is readily apparent; a large volume of semiconductor material is required to be convened (the entire area 44). The present invention, in this mode. will dramatically increase the speed of operation of this device for two reasons. First, it is only necessary to deplete or convert a very shallow region under the gate to pinch off current flow and second, the short channel bctwcen source and drain may be further diminished because the plugs will eliminate the depletion region and subsequent punch-through which would be formed after pinch-off in the previously known devices of this type. Yet another embodiment of the present invention is illustrated in Figure 8. It difEcrs from the previously described embodiments of this invention in that the source 56, the drain 58, the channel region 60 and the plugs 62 and 64 are disposed upon an insulator 66. This device may be either of the enhancement mode or depletion mode, depending on whether a p-type or n-type dopant is used in the channel region 60. It should be apparent that this structure is fully optimized to prevent punch-through and to eliminate junction capacitance beneath the deep diffusion portion of the source and drain.

Claims: Claims: 1. A short channel field effect transistor including a substrate (10, 38, 66), a source region (16, 40, 56) of a first conductivity type disposed upon said substrate and comprising a relatively shallow diffused portion (20) contiguous with a relatively deep diffused portion, a drain region (18, 42, 58) of said first conductivity type disposed upon said substrate and comprising a relatively shallow diffused portion (22) contiguous with a relatively deep diffused portion, wherein said shallow portions are spaced apart from each other, a gate insulation film (28, 48) located on a surface between said source and drain regions, a gate electrode (30, 50, 46) located upon said gate insulation film, a source electrode t32) in contact with the upper surface of said source region, a drain electrode (34) in contact with the upper surface of said drain region, plug regions (24, 26, 52, 54, 62, 64) of a second conductivity type, opposite said first conductivity type, contiguous with each source and drain region and located beneath each of said shallow diffused portions and to the side of each of said deep diffused portions. 2. A field effect transistor as claimed in claim 2, in which the substrate is of a semiconductive material (lû, 38) of type opposite to that of the source and drain regions. 3. A transistor as claimed in claim 1 or 2, in which said plug regions are positioned so that the facing parts of said shallow diffused portions are not blocked thereby, and in which said plug regions are slightly shallower than said deep diffused portions. 4. A transistor as claimed in any preceding claim, in that said source and drain electrodes overlie said deep diffused portions. 5. A transistor as claimed in any preceding claim, including a channel region (44) of the second conductivity type underlying said gate and located between said source and drain regions. 6. A transistor as claimed in claims 2 and 5, in which said channel region has an impurity concentration approximately the same as said substrate. 7. A transistor as claimed in claim 1, in which the substrate is of an insulating material (66). 8. A transistor as claimed in claim 7, including a channel region (60) of semiconductive material of either conductivity type located below the gate electrode and contiguous with the plug regions and the unshielded end faces of the shallow portions of the source and drain regions.

Inventors: HASKELL, JACOB D.
Applicants: XEROX CORPORATION
Application year: 1982
Main classification: H01L29
IPC codes: H01L29