APPARATUS FOR FORMING THIN FILM

Abstract: An apparatus for forming a thin film such as an amorphous silicon film, which comprises a vacuum vessel (32) having a perforated partition plate (34) dividing the vessel (32) into a first chamber (A) and a second chamber (B). A raw material gas is decomposed in two steps, i.e. first in the first chamber (A), and then in the second chamber (B). The pressure within the second chamber (B) is kept lower than that within the first chamber (A).

Description: Apparatus for forming thin film This invention relates to an apparatus for forming a thin film by decomposing the raw material gas under a low pressure. Figs. 1 and 2 show conventional apparatuses for forming a thin film by decomposing the raw material gas under a low pressure by means of electric discharge, i.e. Fig. 1 showing an inductive coupling type plasma CvD apparatus and Fig. 2 showing a capacitive coupling type plasma cVD apparatus. In the apparatus shown in Fig. 1, the raw material gas is introduced through a gas inlet pipe 13 into a quartz vessel 12 disposed on a metal chamber 11. The raw material gas introduced into the vessel 12 is decomposed by the glow discharge from a high frequency coil 14 so as to form a thin film on a substrate 16 disposed on a susceptqr 15 provided with a heater. Reference numeral lX denotes the plasma generated by the glow discharge-decomposition of the gas. As apparent from the drawing, the waste gas is withdrawn through an outlet pipe 13. In the capacitive coupling type plasma C;D apparatus shown in Fig. 2, the raw material gas is introduced through a gas inlet pipe 22 into a metal chamber 21 so as to be decomposed by the glow discharge occurring between an RF electrode 24 connected to a high frequency power source 23 and a counter electrode 25 connected to the ground and having a heater disposed therein. As a result of the gas decomposition, a thin film is formed on a substrate 26 disposed on the counter electrode 25. Reference numeral 27 denotes the plasma generated by the glow discharge decomposition of the raw material gas. As apparent from the drawing, the waste gas is withdrawn through an outlet pipe 28. The conventional apparatuses outlined above permit forming a thin film of desired properties by properly selecting the operating conditions. It is also possible to form a thin film at a high speed by properly controlling the operating conditions such as the high frequency power applied to the electrodes, gas flow rate, gas pressure, etc. The film-forming speed can also be increased by, for example, applying a magnetic field or electric field to the substrate on which is formed a thin film. However, various operating conditions must be controlled properly for increasing the film-forming speed. In addition, the actual film-forming speed widely differs depending on the apparatus used, ren- dering it necessary to collect abundant data. Further, a highly skilled operator is required for increasing the film-forming speed satisfactorily. It should also be noted that, if the high frequency power applied to the electrode is increased for increasing the film-forming speed, it is impossible to obtain a thin film of high density. Further, materials of the vessel wall may be mixed in considerable quantities into the resultant film because of the sputtering phenomenon accompanying the electric discharge within the vessel, failing to obtain a thin film of satisfactory quality. An object of this invention is to provide an apparatus which permits forming a thin film of high quality at a high speed without involving complex adjustment of the operating conditions of the apparatus. According to this invention, there is provided an apparatus for forming a thin film, comprising a vacuum vessel provided with a gas outlet port, means for introducing the raw material gas into the vacuum vessel, means for decomposing the raw material gas, and means for supporting within the vacuum vessel a substrate on which is formed a thin film, wherein the vacuum vessel is constructed by a first chamber in which the introduced raw material gas is mainly decomposed by discharge and a second chamber which is connected to said first chamber and in which is decomposed by discharge the gas (including undecomposed portion of the raw material gas and the species produced by discharge in the first chamber) flowing from the first chamber, the pressure within the second chamber being kept lower than that within the first chamber, and means for forming a thin film of the decomposed gas component on the substrate being disposed within the second chamber. To be brief, the raw material gas is decomposed in two stages in the apparatus of the present-invention. The particular construction of the apparatus permits easily increasing the film-forming speed. In addition, a thin film of high quality can be obtained with a high reproducibility in spite of the high film-forming speed. In a preferred embodiment, the vacuum vessel has a perforated partition plate partitioning the vessel into the first and second chambers. The hole of the partition plate should be larger than the length of mean free path of the gas passing therethrough and should permit maintaining the pressure within the second chamber lower by at least 0.01 Torr, preferably at least 0.1 Torr than the pressure within the first chamber. The partition plate may be provided with a single hole or a plurality of holes as far as the above-noted conditions are satisfied. Further, the first chamber in which is performed the raw material gas decomposition alone may be divided into a plurality of sub-sections using suitable partition means so as to control properly the raw material gas decomposition. This invention can be more fully understood from the -following detailed description when taken in conjunction with the accompanying drawings, in which: Fig. 1 is a cross sectional view schematically showing a conventional inductive coupling type plasma CVD apparatus; Fig. 2 is a cross sectional view schematically showing a conventional capacitive coupling type plasma CVD apparatus; Fig. 3 is a cross sectional view schematically showing an inductive coupling type plasma C\7D apparatus according to one embodiment of the present invention; and Fig. 4 is a cross sectional view schematically showing a capacitive coupling type plasma CVD apparatus according to another embodiment of the present invention. Fig. 3 shows an inductive coupling type plasma CVD apparatus according to one embodiment of the present invention. As seen from the drawing, a quartz vessel 32 having an inner diameter of, for example, 15 cm is mounted to a metal chamber 31 so as to form a vacuum vessel. The vacuum vessel is divided into an upper first chamber A and a lower second chamber B by a partition means e.g. a quartz partition plate 34 provided with a small hole 33 having a diameter of, for example, 1 to 2 cm. During operation, the partition plate 34 permits maintaining the-pressure within the second chamber B lower than that within the first chamber A. The raw material gas introduced into the first chamber A through a gas inlet pipe 35 is decomposed by the glow discharge from a high frequency coil 36A.- Reference numeral 37A denotes the plasma produced by the discharge decomposition. The produced species by the plasma 37A and the undecomposed raw material gas are introduced into the second chamber B through the hole 33 of the partition plate 34. A glow discharge decomposition is further performed within the second chamber B utilizing the discharge from a high frequency coil 36B so as to generate a plasma 37B. As a result, a thin film is formed on a desired substrate 39 disposed on a susceptor 38 having a heater disposed therein. Reference numeral 40 denotes an outlet pipe connected to a vacuum pump. As a result of this construction, the raw material gas within the vessel 32 mainly flows from the first chamber A toward the second chamber s. As apparent from the foregoing description, the raw material gas is decomposed in two stages, leading to an increased film-forming speed because of the improved decomposition efficiency. In addition, the film-forming speed is increased with the high frequency power held substantially equal to that for the prior art. It follows that the apparatus shown in Fig. 3 permits increasing the film-forming speed without deteriorating the formed film. A thin film was actually formed by using the apparatus shown in Fig. 3. Specifically, an amorphous silicon film was formed by using a hydrogen-based raw material gas containing 10% of silane (SiH4). (The hydrogen acted as a carrier.) The silane flow rate was 50 SCCM (cc/min at standard states); the high frequency power for each of the coils 36A and 36B was 5 W; the substrate temperature was 2700C; the pressure within the first chamber A was 1.0 Torr; and the pressure within the second chamber B was 0.1 Torr. The film-forming speed was found to be 400 to 500 A/min. In contrast, the film-forming speed was found to be 80 to 150 A/min in the case of the conventional apparatus shown in Fig. 1 under the same operating conditions except that the high frequency power applied was 10 W. Fig. 4 shows a capacitive coupling type plasma CVD apparatus according to another embodiment of the present invention. It is seen that a metal chamber 41 is provided with a raw material gas inlet pipe 42 and a gas outlet pipe 43. Also, the metal chamber 41 is divided by a metal partition plate 45 provided with a hole 44 having a diameter of 1 to 2 cm into a first chamber A communicating with the gas inlet pipe 42 and a second chamber B communicating with the gas outlet pipe 43. During operation of the apparatus, the partition plate 45 permits maintaining the pressure within the second chamber B lower than that within the first chamber A. The raw material gas introduced into the first chamber A is subjected to a discharge decomposition in the region between an RF electrode 47A connected to a high frequency power source 46A and a counter electrode 48A having a diameter of about 15 cm connected to the ground so as to generate a plasma 49A. The produced species by the plasma 49A and the undecomposed gas are introduced into the second chamber B. Naturally, the undecomposed gas is further subjected to a discharge decomposition in the region between an RF electrode 47 connected to a high frequency power source 46B and a counted electrode 48B having a diameter of about 20 cm connected to the ground so as to generate a plasma 49B. A heater is disposed within the counter electrode 48B and a desired substrate 50 is disposed on the electrode 48B. Of course, a thin film is formed on the substrate 50 as a result of the raw material gas decomposition. A thin film was actually formed by using the apparatus shown in Fig. 4. Specifically, an amorphous silicon film was formed by using a hydrogen-based raw material gas containing 10% oz silane. The silane flow rate was 100 SCCM; the high frequency power applied to each of the RF electrodes 47A and 47B was 5 W; the substrate temperature was 2700C; the pressure within the first chamber A was 1.0 Torr; and the pressure within the second chamber B was 0.5 Torr. The filmforming speed was found to be 600 to 700 A/min. In contrast, the film-forming speed was found to be 80 to 160 A/min in the case of the conventional apparatus shown in Fig. 2 under the same operating conditions. As for the raw material gas, it is also possible to employ pure silane gas in place of the above hydrogen-based silane gas. Further, it is possible to use as the raw material gas silane (SiH4) mixed with at least one doping gas of GeH4, SnC±4, CH4, C2H4, C2H6, B2H6, PH3, AsH3, 02, N2, N20 and NH3 gases. The doping gas may be directly introduced into the second chamber B. In this case, the corresponding chamber B would have a gas inlet pipe (not shown) through which the doping gas is introduced into the chamber B. Each of the embodiments described above is directed to the raw material gas decomposition by electric discharge utilizing a high frequency power. In another embodiment, a preliminary decomposition chamber may be provided before the first chamber A. In this case, only hydrogen gas is introduced to the preliminary decomposition chamber and subjected to the discharge of micro-waves, thereby converting the hydrogen gas into its radical. The hydrogen radical is then introduced into the first chamber A being introduced with the raw material gas or hydrogenbased raw material gas to increase the decomposition efficiency. As described above in detail, the apparatus of the present invention permits increasing the filmforming speed quite easily without deteriorating the formed film. In addition, the apparatus permits forming a thin film of high quality with high reproducibility.

Claims: Claims: 1. An apparatus for forming a thin film, comprising a vacuum vessel (32, 41) provided with a gas outlet port (40, 43), means (35, 42) for introducing the raw material gas into the vacuum vessel (32, 41), means for decomposing the raw material gas, and means (38) for supporting within the vacuum vessel a substrate on which is formed a thin film, wherein the vacuum vessel is constructed by a first chamber (A) in which the introduced raw material gas is decomposed by discharge and a second chamber (B) which is connected to said first chamber (A) and in which is decomposed by discharge the produced species by discharge and an undecomposed portion of the gas flowing from the first chamber (A), the pressure within the second chamber (B) being kept lower than that within the first chamber (A), and means for forming a thin film of the decomposed gas component on the substrate (50) being disposed within the second chamber (B). 2. The apparatus according to claim 1, characterized in that the raw material gas is decomposed within the first and second chambers by a high frequency electric discharge of inductive coupling type. 3. The apparatus according to claim 1, characterized in that the raw material gas is decomposed within the first and second chambers by a high frequency electric discharge of capacitive coupling type. 4. The apparatus according to claim 1, characterized in that the vessel (32, 41) has a perforated partition plate (34, 45) partitioning said vessel (32, 41) into said first and second chambers (A, B). 5. The apparatus according to claim 4, characterized in that the hole of the partition plate (34, 45) is larger than the length of the mean free path of the gas passing therethrough and permits maintaining the pressure within the second chamber (B) lower ny at least 0.01 Torr than the pressure within the first chamber (A). 6. The apparatus according to claim 4, characterized in that the partition plate (34, 45) is provided with a single hole (33). 7. The apparatus according to claim 4, characterized in that the partition plate (34, 45) is provided with a plurality of holes. 8. The apparatus according to claim 1, characterized in that the first chamber (A) consists of a plurality of sub-sections each provided with means for discharge-decomposing the raw material gas. 9. The apparatus according to claim 1, characterized in that the raw material gas is silane gas and the thin film formed is an amorphous silicon film. 10. The apparatus according to claim 9, characterized in that hydrogen gas is employed as a carrier gas.

Inventors: HATAYAMA, TAMOTSU, ITO, HIROSHI
Applicants: KABUSHIKI KAISHA TOSHIBA
Application year: 1982
Main classification: C23C14
IPC codes: C23C16, H01L31, H01L21