A SCHOTTKY-BARRIER GATE FIELD EFFECT TRANSISTOR AND A PROCESS FOR THE PRODUCTION OF THE SAME

Abstract: This invention is concerned with an improved Schottky-barrier gate field effect transistor, which com­ prises a semi-insulating semiconductor substrate (21), an active layer (22) formed on the surface of the semi-conduc­ tor substrate and a source electrode (23), Schottky-barrier gate electrode (25) and drain electrode (24) formed on the active layer, in which the active layer has a first part (22′) having such a thickness as to give a predetermined pinch-­ off voltage and being formed near the gate electrode (25) and a second part (22″) having a substantially similar carrier concentration to that of the first part (22′) and a larger thickness than the first part and being formed between the Schottky-barrier gate electrode (25) and source electrode (23), and the upper surfaces of the first part and second part the active layer are in a same plane.

Description: A SCHOTTKY-BARRIER GATE FIELD EFFECT TRANSISTOR AND A PROCESS FOR THE PRODUCTION OF THE SAME This invention relates to an improvement in a Schottky-barrier gate field effect transistor and a process for the production of the same. Schottky-barrier gate field effect transistors (which will hereinafter be referred to as "MESFET" simply) have widely been used as an element for amplification or oscillation, in particular, in microwaves, and as well known in the art, are excellent as a basic element for an intergrated circuit of ultra-high speed operation. The structure of the most commonly used MESFET is as shown in Figure 1 of the accompanying drawings, in which 1 is a high resistance or semi-insulating semiconduc-. tor crystal substrate, 2 is an electrically conductive semiconductor crystal layer generally- called an active layer, 3 is a Schottky-barrier gate electrode and 4 and 5 are respectively a source electrode and drain electrode having ohmic characters. The carrier concentration Nd and thickness a of the active layer 2 have a relationship with the pinch-off voltage Vp of MESFET, represented by the following formula (1): EMI2.1 where Vb is a built-in voltage, e is a dielectric constant of semicondictor and q is an electronic charge. Vp is given from the requirements of a circuit design and Nd and a are determined using the formula (1) so as to satisfy the value Vp. One disadvantage of the prior art structure as shown in Figure 1 is that the transconductance gm obtained is not sufficiently large and the noise characteristic is deteriorated, because the resistance between gate 3 and source 4 or gate 3 and drain 5 is high. In particular, where the absolute value of the pinch-off voltage Vp is small or in the case of "normally off" LVp > O), Nd- and a-values should be small and thus the series resistance between a gate and source is larger as is evident from the formula ±1). When active layer 2 is of GaAs crystal, there is a high density surface state on crystal surface areas 6 and 7 between a gate and source and between a gate and drain, whereby the surface potential is substantially fixed and a depletion layer is formed near the surface of the semiconductor crystal, resulting in a larger series resistance between a gate and source. This is a very important problem. As a method of solving this problem, it has hitherto been proposed to make thicker active layers 9 and 10 between a gate and source and between a gate and drain than active layer 8 directly under the gate, as shown in Figure 2. According to this method, however, it is required to determine the thickness of active layer 8 and the carrier concentration so as to satisfy the condition of the formula (1), but it is difficult to control precisely and reproducibly the thickness of the part 8 in such a recess structure by etching and the like in view of the present technical level. This structure is obtained by forming a uniform active layer having a thickness desired for the portion directly under source electrode 4 and drain electrode 5, making thinner only part 8 to be directly under gate electrode 3 by etching and the like and then forming electrodes 4, 5 and 3. However, this structure has the disadvantage that not only a fine photolithography for forming an electrode is difficult, but also a much severer precision is required for etching control of an active layer thus resulting in a lowered yield, because the surface of the active layer is not flat. It is an object of the present invention to provide an improved Schottky-barrier gate field effect transistor whereby the prior art disadvantages can be overcome. It is another object of the present invention to provide a Schottky-barrier gate field effect transistor excellent in microwave properties as well as in yield. It is a further object of the present invention to provide a process for the production of an improved Schottky-barrier gate field effect transistor. These objects can be attained by a Schottkybarrier gate field effect transistor comprising a semiinsulating semiconductor substrate, an active layer formed on the surface of the semiconductor substrate, and a source electrode, Schottky-barrier gate electrode and drain electrode formed on the active layer, in which the active layer has a first part having such a thickness as to give a predetermined pinch-off voltage and being formed near the gate electrode and a second part having a substantially similar carrier concentration to that of the first part and a larger thickness than the first part and being formed between the Schottky-barrier gate electrode and source electrode, and the upper surfaces of the first part and second part of the active layer are in a same plane, or by a Sch9ttky-barrier gate field effect transistor, in which an active layer of one electrically conductive type semiconductor crystal is formed on one surface of a high resistivity or semi-insulating semiconductor crystal substrate, the active layer consists of a first active layer which thickness and carrier concen tration are so chosen as to give a predetermined value of pinch-off voltage and a second active layer having a substantially similar carrier concentration to the first active layer and a larger thickness than the first active layer and being provided at the both sides of the first active layer, the first shallow active layer is provided with a Schottky-barrier gate electrode correctly positioned on the surface part and the second thick active layer is provided with a source electrode and drain electrode on the surface part. Examples of the present invention are now described with reference to the accompanying drawings in which: Figure 1 and Figure 2 are cross sectional views of the prior art transistor. Figure 3 is a cross sectional view of the first embodiment of the field effect transistor according to the present invention. Figure 4 (A), (B) and (C) are cross sectional views to illustrate in order the steps of making the transistor of the present invention shown in Figure 2. Figure 5 is a graph showing a carrier concentration distribution in an active layer. Figure 6 is a cross sectional view of a preferred embodiment of the field effect transistor according to the present invention. Figure 7 is a cross sectional view of the second embodiment of the field effect transistor according to the present invention. Figure 8 (A), (B), (C), (D) and (E) are cross sectional views to illustrate in order the steps of making the transistor of the present invention shown in Figure 7. Figure 9 is a graph showing a carrier concentration distribution in an active layer. Figure 10 is a cross sectional view of the third embodiment of the field effect transistor according to the present invention. Figure 11 (A), (B), (C), (D), (E) and (F) are cross sectional views to illustrate in order the steps of making the transistor of the present invention shown in Figure 10. Figure 12 is a cross sectional view of the fourth embodiment of the field effect transistor according to the present invention. Figure 13 (A), (B), (C), cud), (E), (F) and CG) are cross sectional vicaws to illustrate in order the steps of making the transistor of the present invention shown in Figure 12. Figure 14 is a cross sectional view of the fifth embodiment of the field effect transistor according to the present invention. Figure 15 (A), (B), (C), (D), (E) and (F) are cross sectional views to illustrate in order the steps of making the transistor of the present invention shown in Figure 14. Figure 16 is a graph showing the relationship between the dose of oxygen and sheet resistivity. Figure 17 is a cross sectional view of the sixth embodiment of the field effect transistor according to the present invention. Figure 18 (A), (B), (C) and (D) are cross sectional views to illustrate in order the steps of making the field effect transistor of the present invention shown in Figure 17. Figure 19 (A) and (B) are cross sectional views of the seventh embodiment of the field effect transistor according to the present invention. Figure 20 (A), (B), (C) and (D) are cross sectional views to illustrate in order the steps of making the transistor of the present invention shown in Figure 19 (A). Figure 21 (A), (B) and (C) are cross sectional views to illustrate in border the steps of making the field effect transistor of the present invention shown in Figure 19 (B). Figure 22 is a cross sectional view of the eigth embodiment of the field effect transistor according to the present invention. Figure 23 (A), (B), (C) and (D) are cross sectional views to illustrate in order the steps of making the transistor of the present invention shown in Figure 22. Figure 24 is a cross sectional view of the ninth embodiment of the field effect transistor according to the present invention. Figure 25 (A), (B), (C) and (D) are cross sectional views to illustrate in order the steps of making the transistor of the present invention shown in Figure 24. In a Schottky-barrier gate field effect transistor comprising a semi-insulating semiconductor substrate, an active layer formed on the surface of the semiconductor substrate, and a source electrode, Schottky-barrier gate electrode and drain electrode formed on the active layer, according to the present invention, the active layer has a first part having such a thickness as to give a predetermined pinch-off voltage and being formed near the Schottky-barrier gate electrode and a second part having a substantially similar carrier concentration to the first part and a larger thickness than the first part and being formed between the Schottky-barrier gate electrode and source electrode, and the upper surfaces of the first part and second part of the active layer are in a same plane. More particularly, according to the present invention, there is provided a Schottky-barrier gate field effect transistor, in which an active layer of one electrically conductive type semiconductor crystal is formed on one surface of a high resistivity or semi-insulating semiconductor crystal substrate, the active layer consists of a first active layer whose thickness and carrier concentration are so chosen as to give a predetermined value of pinch-off voltage and a second active layer having a substantially similar carrier concentration to the first active layer and a larger thickness than the first active layer and being provided at the both sides of the first active layer, the first shallow active layer is provided with a Schottky-barrier gate electrode correctly posi- tioned on the surface part and the second thick active layer is provided with a source electrode and drain electrode on the surface part. In addition, according to the present invention, there is provided a process for the production of a Schottky-barrier gate field effect transistor, which comprises forming a first active layer of one electrically conductive type semiconductor crystal with a thickness and carrier concentration chosen so as to give a predetermined pinch-off voltage, forming a pattern thereon, introducing an impurity for giving the same electrically conductive type as the first active layer into the first active layer by ion implantation or thermal diffustion selectively through the pattern as a mask to forts a second deeper active layer, and then forming electrodes. The present invention will now be illustrated in more detail through the embodiments of the present invention. Fig. 3 is a cross-sectional view of the first embodiment of the Schottky-barrier gate field effect transistor according to the present invention, which comprises a semi-insulating semiconductor substrate 21 such as GaAs, an n-type active layer 22, source electrode 23, a drain electrode 24 and a Schottky-barrier gate electrode 25. In the field effect transistor of the present invention, as shown in Fig. 3 for example, a part of active layer (second part) 2211 having a larger thickness than another part of active layer (first part) 22' directly under the gate electrode is formed near source electrode 23 and drain electrode 24 while keeping flat the surface of active layer 22. Since the surface of active layer 22 is flat, a fine photolithography is easy and the yield is thus increased in the formation of electrodes 23, 24 and 25 or in the production of integrated circuits, for example monolithic microwave IC such as microwave receiver heads with a mixer diode, and high speed digital IC. Fig. 4 (A), (B) and (C) are cross sectional views to illustrate a method of making the field effect transi stor shown in Fig. 3. Referring to Fig. 4 (A), 28Sï+ ion is implanted in the surface of a semi-insulating substrate 21 of GaAs to form active layer 22' with a uniform thickness. The thickness and carrier concentration of this active layer are so chosen as to realize a desired pinch-off boltage of-preferably +0.3 to.-3 V. For example, it is required for obtaining a pinch-off voltage of -2.2 V to form an active layer with a carrier concentration of 1017 cm 3 and a thickness of 0.1 pm approximately and implantation therefor is carried out,for example, with an implantation energy of 120 KeV and an implantation quantity of 2 x 1012 dose/cm2 where the doping efficiency is regarded as 100 5b. The theoretical value of the carrier concentration distribution obtained under these conditions is shown by chain line 31 in Fig. 5. As exemplified in Fig. 4 (B), after active layer 22' with a uniform thickness is formed, pattern 27 of photoresist is formed thereon. Using this pattern 27 as a mask, the second ion implantation is carried out to form a new active layer 22" on the non-masked site. The conditions for the second ion implantation are so chosen that the implantation energy is larger than that of the first implantation to implant more deeply and the im#lantation quantity is determined in such a range that the final peak carrier concentration is not too large to prevent a dielectric breakdown by a voltage applied to the gate and an increase of gate capacitance. When an implantation energy of 400 KeV and an implantation quantity of 3.9 x iso12 dose/cm2 are chosen as such#implanta- tion conditions, for example, the theoretical value of the carrier concentration distribution is shown by broken line 32 in Fig. 5. The concentration of non-masked part 22)? in active layer 22 corrresponds to the sum of the concentration by the first ion implantation plus that by the second ion implantation, which distribution is shown by solid line 33 in Fig. 5. Referring to Fig. 4 (C), the method is completed by removing mask 27, electrically activating the implanted ions by annealing, and then forming source electrode 23, drain electrode 24 and gate electrode 25 on a predetermined site of the flat active layer 22 by the use of a mask formed for electrodes. As can be seen from Fig. 5, the total number of carriers in active layer 22"near source electrode 23 are about three times more than that in active layer 22' directly under gate electrode 25 and, consequently, the resistance between a gate and source is decreased to 1/3 or less as compared with the case where active layer 22' is uniformly formed. On the other hand, since the peak carrier concentration in active layer 22" becomes only about 13 ffi more than that in active layer 22', decrease of the breakdown voltage of a gate and increase of the capacitance of a gate are held small. An example of making the field effect transistor having the structure shown in Fig. 3 by the ion implantation method has been illustrated above, but it can be produced by the thermal diffusion method. That is, a shallow diffusion layer corresponding to active layer 22' of Fig. 4 (A) is firstly formed by contacting a dopant with a small diffusion constant with the surface of a substrate, followed by thermal diffusion, a mixed diffusion layer consisting of a shallow diffusion layer and a deep diffusion layer corresponding to active layer 22" of Fig. 4 (B) is then formed by contacting another dopant with a large diffusion constant with the site not directly under a gate using a mask, followed by thermal diffusion, and finally, electrodes 23, 24 and 25 are formed. Alternatively, the structure of Fig. 3 can be realized by depositing a dopant with a small diffusion constant on a gate part while depositing another dopant withta large diffusion constant on between a gate and source and then subjecting both zones to thermal diffusion simultaneously. The shorter is the length of active layer 22' in Fig. 3, the larger is the value of gm. This is a fabou rable character. However, shortening of this length is limited by the fine #hotolitho-ra#hy. The relationship between the length of-active layer 22' and that of gate electrode 25 will now be illustrayed. In the case of a "normally on" type, which has a relatively thick active layer 22', even if the length of active layer 22' is somewhat longer than that of gate electrode 25, the properties are not significantly deteriorated because such a problem does not arise that the part of active layer 22' not directly under a gate increases extremely the resistance between the gate and source since active layer 22' is relatively thick and the thickness of a depletion layer from the surface toward the inside does not extend to the whole thickness of active layer 22'. On the contrary, in the case of a "normally off" ';#ype, in which the shallow active layer 22' is relatively thin, if the length of the shallow active layer 22' is greater than that of gate electrode 25, the depletion layer in the region not directly beneath the gate will extend completely to the bottom of the shallow active layer, titus resulting in a marked increase of the resistance between the gate and source and in an extreme case, breaking completely current. In order to solve such a problem, it is proposed as a preferable embodiment to form an active layer 22' with a shorter length than that of a gate electrode 25 as exemplified in Fig. 6 in which the numeral indication of the each element corresponds to Fig. 3. This embodiment is of a "normally off type. The second embodiment of the present invention will now be illustrated. With the decrease of the length of active layer 22', gm of the field effect transistor is increased and a high gain and high speed operation are possible. An effective method of shortening the length of active layer 22' is given below. Fig. 7 shows a cross sectional view of the structure of a field effect transistor according to one embodiment of the present invention. MESSSU having this structure according to the present invention shows a low series resistance due to the presence of deep active layers 42 and 43 and thus is excellent in transconductance gm as well as high frequency properties. Since the effective gate length depends on the length of shallow active layer 41 and shortening of this length can readily be effected according to this embodiment, more excellent high frequency characterristics can be given. Fig. 8 (A), (B), (C), (D) and (z) are cross sectional views to illustrate a process of making MESFR according to the present invention. Referring to Fig. 8 (A), on the surface of a high resistivity or semi insulating semiconductor crystal substrate 1 is formed one electrically conductive type (n- or p- type) semiconductor crystal layer 46 with such a thickness and carrier concentration that a desired pinch-off voltage Vp, e.g. +0.3 to -3 V, be obtained according to the formula (1). Preparation of semiconductor crystal layer 46 is generally carried out by the vapor pzlase epitaxial method, liquid phase epitaxial method or method of implanting an impurity ion in semi-insulating substrate 1. When 28Si+ ion is implanted in a semi-insulating semiconductor substrate of GaAs to obtain an active layer (normally off) with a pinch-off voltage of 0 V, for example, the implantation is carried out with a 28Si+ implantation quantity of 5.5 x 1011 dose/cm2 and an implantation energy of 120 KeV where the doping efficiency is regarded as 100 %. The theoretical value of the carrier concentration distribution obtained under these conditions is shown by solid line 56 in Fig. 9 in which the abscissa represents the distance, i.e. depth from the surface of the semiconductor crystal layer (m) and the ordinate represents the carrier concentration (cm 5). The stripe-like mask 47 is formed on the surface of the above described crystal layer 46 as shown in Fig. 8 (B). As the material of mask 47, photoresists and resists for electron beam lithography are suitable, but any other materials can also be used which are capable of being used as a selective mask for ion implantation, and being readily formed and stripped. An impurity capable of giving the same conduction type as crystal layer 46 is introduced into the crystal substrate by the ion implantation method or thermal diffusion method using mask 47 to form deep active layers 42 and 43. MMen the thermal diffusion method is employed, a material having a sufficient heat resistance such as Si02, SiN4 and the like should of course be used. When the above described deep active layer is formed by ion implantation, the implantation energy is made larger than that used for the ion implantation of shallow active layer 46 so as to obtain a deeper implantation than in shallow active layer 46 and the implantation quantity is preferably chosen in such a range that the final peak carrier concentration is not too large to prevent a dielectric breakdown by a voltage applied to a gate and an excessive increase of gate capacitance. °hen an implantation energy of 400 KeV and an implantation quantity of 1.07 x 1012 dose/cm2 are chosen as such implantation conditions, for example, the theoretical value of the carrier concentration distribution is sholrm by broken line 57 in Fig. 9. The concentration of nonmasked parts 42 and 43 corresponds to the sum of the concentration by the first shallow ion implantation plus that by the second deep ion implantation, which distribution is shown by chain line 58 in Fig. 9. As can be seen from Fig. 9, the total number of carriers in deep active layers 42 and 43 is about three times higher than that in the main active layer 41 for giving a pinch-off voltage and, consequently, the resistance between a gate and source can be decreased to 1/3 or less as compared with the prior art method wherein active layers 42 and 43 are formed in the same manner as active layer 41 as shown in Fig. 1. If the second ion implantation is carried out with a larger dose, the gate-source resistance can further be decreased, but it is necessary to choose a suitable dose in order to prevent that the carrier concentration is extremely large, the breakdown voltage of a gate is smaller than a desired value and the gate capacitance is large. Then, metallic films 48, 49 and 50 such as Al film are vapor-deposited onto the whole surface of the substrate as shown in Big. 8 (C) and, thereafter, mask 47 is removed by the use of a suitable solvent, for example, organic solvents in the case of photoresists while vapordeposited film 49 on mask 47 is simultaneously removed (lift off), thus obtaining vapor-deposited film patterns 48 and 50 to be a. reversal image of mask 47 as shown in Fig. 8 (D). Using metallic films 48 and 50 as a masking material, ion implantation is then carried out in a slant direction as shown in the figure so that a part of window 51 has substantially the same carrier concentration distribution as deep active layers 42 and 43. In this case, it is important to effect the ion implantation in a slant direction by all means so that a shallow part remains. This remaining shallow active layer will later be used as a main active layer to give a pinch-off voltage. It will apparently be understood that the length of the shallow main active layer 41 can be controlled easily and precisely by selecting suitably the implanting angle and the thickness of mask 50. For o example, when the thickness of a mask is 5000 A and the implanting angle is 30 from vertical, the length of o main active layer 41 becomes about 2900 A. Practically, the length of active layer 41 is further shorter than the above described value because the implanted atoms are scattered laterally too. In the prior art lithography, it is difficult to make an MESFED having a gate length of 0.5j#irn with a high reproducibility, sb it is more difficult to make an IC of an rtEsFE? with a short gate length. According to the method of the present invention, however, an active layer with a short effective gate length can be obtained with a high reproducibility as well as a high yield. Since masks 48 and 50 are only used as a masking material for ion implantation, any other materials capable of interrupting implanted ions and being readily formed and removed can be used in addition to Al. Examples of such a masking material are Au, Ti, Mo, Ta, etc. After removing masks 48 and 50, high impurity layers 54 and 55 are selectively formed on a part to be an ohmic contact part by the ion implantation method or thermal diffusion method, preferably using mask 52 as shown in Fig. 8 (E), mask 52 is then removed and the implanted layer is subjected to annealing for activation. When the crystal material is a compound semiconductor such as GaAs, Inp and the like, the anneal should be carried out under coating with e.g. Si3N4 film and/or controlling a pressure of As or P for the purpose of protecting the crystal surface. After annealing, gate electrode 3, source electrode 4 and drain electrode 5 are formed in conventional manner to give an MES as shown in Fig. 7. This embodiment is commercially important since according to this embodiment, an MESFES with a short gate length and a small series resistance between a gate and source can be made easily with a high reproducibility. The third embodiment of the present invention will now be illustrated. As illustrated in the example of Fig. 6, it is important for decreasing the series resistance that a gate electrode at least, covers the whole of a shallow active layer, but on the other hand, a part extending over a deep active layer due to a much larger length of the metallic electrode than that of the shallow active layer does increase the gate capacitance and deteriorate the high frequency characteristics and does not contribute to an effective operation of the field effect transistor. Ideally speaking, therefore, it is desirable that a shallow active layer and a gate electrode metal have a same length and are formed correctly on a same site. This third embodiment is to attain the above described purpose and the cross-sectional structure of NESFET is as shown in Fig. 10. In the MESF3T of Fig. 10, on semiconductor crystal substrate 1 are provided shallow active layer 65 under Schottky-barrier gate electrode 70, deep active layer 63 under source electrode 72 and under between gate and source electrodes and deep active layer 64 under drain electrode 73 and under between gate and drain electrodes, and this MESBT has the feature that both shallow active layer 65 and gate electrode 70 have a same length and are formed correctly on a same site. Fig. 11 (A) to Fig. 11 (E) are cross sectional views to illustrate a process of making an MES9ET according to the present invention. Referring to Fig. 11 (A), on the surface of a high resistivity or semi-insulating semiconductor crystal substrate 1 is formed one electrically conductive type semiconductor crystal layer 61 with such a thickness and carrier concentration that a desired pinch-off voltage, e.g. +0.3#to -3 V, be obtained according to the formula (1). Preparation of semiconductor crystal layer 61 is generally carried out by the vapor phase epitaxial (CVD epitaxial) method, liquid phase epitaxial (IPE) method or method of implanting an impurity. ion in semi-insulating substrate 1. Then 28so+ ion is implanted in a semi-insulating crystal substrate of GaAs to obtain an active layer (normally off) with-a pinch-off voltage of 0 V, for example, the implantation is-carried out with a 28Si implantation quantity of 5.5 x 1011 dose/cm2 and an implantation voltage of 120 KeV where the doping efficiency is regarded as 100 %. The carrier concentration distribution in the depth direction at this time is shown by solid line 56 in Fig. 9. Then stripe-like implantation mask 62 is formed on the surface of the above described crystal layer 61 as shown in Fig. 11 (B). As the material of mask 62, 5102 is suitable, but any other materials can be also used which are capable of being used as a selective mask for ion implantation, and being readily formed and stripped. An impurity capable of giving the same conduction type as crystal layer 61 is then introduced into the crystal substrate by the ion implantation method or thermal diffusion method using mask 62 to form deep active layers 63 and 64. When the above described deep active layers 63 and 64 are formed by ion implantation, the implantation energy is made larger than that used for the ion implantation of shallow active layer 61 so as to obtain a deeper ir#tlantation than in shallow active layer 61 and the implantation quantity is preferably chosen in such a range that the final peak carrier concentration is not too large to prevent a dielectric breakdown by a voltage applied to the gate and an increase of gate capacitance. When an implantation energy of 400 KeV and an implantation quantity of 1.07 x 1012 dose/cm2 are chosen as such implantation conditions, for example, the theoretical value of the carrier concentration distribution is sholm by broken line 57 in Fig. 9. Ther concentration of non-masked parts 63 and 64 corresponds to the sum of the concentration by the first shallow ion implantation plus the concentration by the second deep ion implantation, which distribution is shown by chain line 58 in Fig. 9. As can be seen from Fig. 9, the total number of carriers in deep active layers 63 and 64 is about three. times higher than that in the principal active layer 65 for giving a pinch-off voltage and, consequently, at least the gate-source resistance can be reduced to 1/3 or less as compared with the prior art method wherein active layers 63 and 64 are famed in the same manner as active layer 65 as shown in Fig. 1. When active layer 63, 64 or 65 is formed by ion implantation, annealing is carried out for the purpose of electrically activating the ion implanted layer. During the same time, when the crystal substrate is of a compound semiconductor such as GaAs, InP and the like, the anneal should be carried out at a temperature of 700 to 850 0c for several ten minutes with protecting the surface from deterioration by the use of a controlled As or P pressure. Then, Au thin films 66, 67 and 68 are formed on the whole surface of the substrate by vapor deposition in vacuum as shown in Fig. 11 CC). Thereafter, SiO2 film 62 is removed by the use of an etchant containing HF while Au thin film 67 on SiO2 film 62 is simultaneously removed (lift off), thus obtaining Au film patterns 66 and 68 to be a reversal image of the pattern of SiO2 as shown in Fig. ll t A metal to be a Schottky-barrier gate electrode, for example, Al is vapor-deposited on the whole surface thereof to form vapor-deposited films 69, 70 and 71 as shown in Fig. 11 (E). Then, Au thin films 66 and 68 are removed with an etchant containing iodine while Al films 69 and 71 on Au films 66 and 68 are simultaneously removed by lift off, whereby Schottky-barrier gate electrode 70 is formed on a same site just above shallow active layer 65. as shown in Fig. 11. (F). If Schottky gate electrode 70 is not subjected to correct alignment and is somewhat shifted, there arises a part of shallow active layer on which there is no Schottky gate electrode and the series resistance of this part is large. The method of the present invention, on the contrary, has the advantage that due to self-alignment there is scarcely a position shift. Finally, source electrode 72 and drain electrode 73 are formed in known manner to thus obtain an improved I##7ST as shown in Fig. 10. The fourth embodiment of the present invention will now be illustrated,' which corresponds to another embodiment having the same object and advantage as the third embodiment. Thus, the cross sectional view of this embodiment is similar to that of the third embodiment, as shown in Fig. 12. The MESSET of Fig. 12 comprises semi-insulating semiconductor substrate 81 of GaAs, n-type active layer 82, source electrode 83, drain-electrode 84 and Schottkybarrier gate electrode 85. In this structure, the surface of the active layer is flat and the thickness of active layer 82" between a gate and source is larger than that of active layer 82' directly under a gate. In particular, active layer 82" and gate electrode 85 are formed based on a same pattern of insulating material by the so-called self-alignment method and accordingly, the position of gate electrode 85 and second active layer 82 is precisely determined. Fig. 13 (A) to Fig. 13 (G) are cross sectional views to illustrate a process of making ###SFET according to the present invention. Referring to Fig. 13 (A), on the surface of semi-insulating semiconductor crystal substrate 81 of GaAs is implanted 28ski+ idn to form acti- ve layer 82' with a uniform thickness. The thickness and carrier concentration of this active layer are chosen so as to realize a desired pinch-off voltage, e.g. +0.3 to -3 V. For example, a carrier concentration of 1017 cm 3 and an active layer with a thickness of 0.1 Sm are appro -ximately required for realizing a pinch-off voltage of 0 V and as ion implantation conditions, there are chosen an implantation energy of 120 KeV and an implantation quantity of 5.5 x 1011 dose/cm2 where the doping efficiency is regarded as 100 GA. The theoretical value of the carrier concentration distribution obtained#under these conditions is shown by solid line 56 in Fig. 9. As exemplified in Fig. 13 (B), active layer 82' withauniform thickness is formed and then pattern 87 consisting of an insulating material is formed thereon. Using this pattern 87 as a mask, the second ion implantation is carried out to form a new active layer 82" on the non-masked site under such conditions that the implantation energy is made larger than that used in the first ion implantation so as to obtain a deeper implantation than in the first iom implantation and the implantation quantity is chosen in such a range that the final peak carrier concentration is not too large to prevent a dielectric breakdown by a voltage applied to the gate an increase of gate capacitance. When an implantation energy of 400 KeV and an implantation quantity of 1.07 x 1012 dose/cm2 are chosen as such implantation conditions, for example, the theoretical value of the carrier concentration distribution is shown by broken line 57 in Fig. 9. The concentration of non-masked part 82" in active layer 82 corresponds to the sum of the concentration by the first ion implantation plus that by the second ion implantation, which distribution is shown by chain line 58 in Fig. 9. In this embodiment, silicon nitride is used as a masking pattern 87. A silicon nitride film of 1#2# S in thickness is formed by the plasma CVD method and using a resist pattern formed thereon as a mask, it is subjected to plasma etching with a mixed gas of CF4 and. 02 (5 #) to obtain pattern 87 shown in Fig. 13 (3). while holding pattern 87 as it is, the implanted element is electrically activated by annealing and source electrode 83 and drain electrode 84 are formed on predetermined sites of active layer 82 as shown in Fig. 13 (C). Thereafter, a reversal pattern 88 to masking pattern 87 is made of an organic resin film having a thickness same as or less than that of pattern 87. To this end, a positive resist is coated in a thickness of about 2.5#m so as to be almost flat as shown in Fig. 13 (D) and the whole surface is subjected to plasma etching with 02 gas to reduce the thickness thereof by 1.5sum, thus obtaining a thickness slightly lower than the upper surface of pattern 87 as shown in Fig. 13 (E). Then only pattern 87 is removed to obtain a resist pattern shown in Fig. 13 (F). In this embodiment, silicon nitride pattern 87 only is selectively removed by plasma etching using a mixed gas of CF4 and 02 (5 #) and pattern 88 positive-negative reversed to pattern 87 is precisely formed. Finally, the process is completed by forming gate electrode 85 on the part from which pattern 87 is removed, as shown in Fig. 13 (G). The fifth embodiment of the present invention, which has the same object and merits as the third or fourth embodiment, will now be illustrated. Fig. 14 is a cross-sectional view of the fifth embodiment of the I4ESFED according to the present invention, which comprises semi-insulating semiconductor substrate 91 of GaAs,#n-type active layer 92, source electrode 93, drain electrode 94, Schottky-barrier gate electrode 95 and a part of n-type active layer 96 inactivated (insulated) by ion implantation. In this structure, the surface of the active layer,is flat and the thickness of active layer 92" between a gate and source is larger than that of active layer 92' directly under the gate. In particular, active layer 92' directly under the gate and gate electrode 95 are formed based on a same pattern of insulating material by the so-called self-alignment method and accordingly, the position of gate electrode 95 and second active layer 92" is precisely determined. Fig. 15 (A) to Fig. 15 (F) are cross sectional views to illustrate a process of making an PESFED according to the present invention. Referring to Fig. 15 (A), on the surface of semi-insulating semiconductor crystal substrate of GaAs 91 is formed active layer 92 with a uniform thickness by vapor phase or liquidphase growth or implantation of Si+ or the like. The thickness and carrier concentration of this-active layer are selected so as to decrease the gate-source resistance. In a case where the active layer is formed by ion implantation, the implanted element is electrically activated by annealing and source electrode 93 and drain electrode 94 are formed on a predetermined site of active layer 92 as shown in Fig. 15 (B). Then masking pattern 97 for forming gate electrode 95 and inactivated zone 96 is made of, for example, a photoresist, as shown in Fig. 15 (C). Using this pattern 97 as a mask, an ion implantation for the inactivation is carried out as shown in Fig. 15 (D). As the ion to be implanted, there can be used with attaining the object of the present invention any of ions capable of inactivating the active layer without losing the inactivating function even after forming gate electrode 95. In this embodime;nt, oxygen is used as the inac activating ion. Fig. 16 shows a state in which the resistance of an active layer with a sheet resistance of 150 /D is varied by implantation of 0+ ion. Besides oxygen chromium or boron can also be used as the inactivating ion. The pinch-off voltage can be adjusted to a desired value by implantation of such an inactivating ion to reduce the effective length of active layer 92' or to decrease the carrier concentration. Thereafter, a metal for gate electrode 95 is vapor-deposited as shown in Fig. 15 (E) and masking pat tern 97 is removed (lift off method), thus forming gate electrode 95 as shown in Fig. 15 (F). As the material of masking pattern 97 there can be used any materials capable of serving as a mask for ion implantation and being removed selectively to retain a gate electrode, for example, not only photoresists but also materials not reactive with semiconductors, such as organic resin films or inorganic compounds, e.g. silicon oxide, aluminum oxide and aluminum nitride. The sixth embodiment of the present invention, which has the same object and merit as the third to fifth embodiments, will now be illustrated. Fig. 17 is a cross-sectional view of the sixth embodiment of the Ifl according to the present inven tion, which comprises semi-insulating semiconductor sub strate of GaAs 101, n-type active layer 102, source electrode 103, drain electrode 104, Schottky-barrier gate electrode 105 and insulating film 106. In this struc ture, the surface of the active layer is flat and the thickness of active layer 102)? between a gate and source is larger than that of active layer 102' directly under the gate. In particular, active layer 102" and gate electrode 105 are formed based on a same pattern of insulating material by the so-called self-alignment method and accordingly, the position of gate electrode 105 and second active layer 102" is precisely determined. Thus, not only the production process is simple but also the yield is increased and at the same time, a fine patterning is possible. Fig. 18 (A) to Fig. 18 (D) are cross sectional views to illustrate a process of making an MESFET according to the present invention shown in Fig. 17. As shown in Fig. 18 (A), in the surface of semi-insulating semicon 28 crystal substrate of GaAs 101 is implanted Si + ductor crystal substrate of. GaAs 101 is implanted Si ion to form active layer 102' with a uniform thickness. The thickness and carrier concentration of this active layer are so selected that a desired pinch-off voltage, e.g. +0.3 to -3 V, be obtained. For example, a carrier concentration of about 1017 cm 3 and an active layer with a thickness of about 0.1 slm are required for realizing a pinch-off voltage of -2.2 V and as ion implantation conditions, there are chosen an implantation energy of 2 120 KeV and an implantation quantity of 2 x 1012 dose/cm where the doping efficiency is regarded as 100 %. The theoretical value of the carrier concentration distribution obtained under these conditions is shown by chain line-31 in Fig. 5. As exemplified in Fig. 18 (B), active layer 102' with a uniform thickness is formed and then pattern 107 consisting of an insulating material is formed thereon. Using this pattern 107 as a mask, the second ion implantation is carried out to form a new active layer, 102" on the non-masked site under such conditions that the implantation energy is made larger than that used in the first ion implantation so as to obtain a deeper implantation than in the first ion implantation and the implantation quantity is chosen in such a range that the final peak carrier concentration is not too large to prevent the dielectric breakdown by a voltage applied to a gate and an excessive increase of gate capacitance. hen an implantation energy of 400 KeV and an implantation quan tity of 3.9 x 1012 dose/cm2 are chosen as such implanting conditions, for example, the theoretical value of the carrier concentration distribution is shown by broken line 32 in Fig. 5. the concentration of non-masked part 102!! in active layer 102 corresponds to the sum of the concentration by the first ion implantation plus that by the second ion implantation, which distribution is shown by solid line 33 in Fig. 5. As can be seen from Fig. 5, the total number of carriers in deep active layer 102" near source electrode 103 is about three times higher than that in active layer 102' directly under gate electrode 105 and, consequ- ently, the gate-source resistance can be reduced to 1/3 or less as compared with the case where active layer 102' is uniformly formed. On the other hand, since the peak carrier concentration in active layer 102" becomes only about 13 ffi more than that in active layer 102', decrease of the breakdown voltage of a gate and increase of the capacitance of a gate are held small. As masking pattern 107, for example, silicon oxide film (SiO2) can be used. For example,- an Si02 film with a thickness of 1.2yam is formed and using a resist pattern wormed thereon as a mask, it is subjected to plasma etching with C3F8 gas, thus obtaining pattern 107 shown in Fig. 18 (B). As the material of masking pattern 107 there can be used any materials capable of serving as a mask for ion implantation or thermal diffusion and being removed selectively from insulating film 106 in addition to,Si02 used in this embodiment. On the other hand, insulating film 106 having a resistance to a high temperature process such as annealing can satisfy the requirement of the present invention. Therefore, the material is not limited to silicon nitride only, but materials excellent in heat resistance and not reactive with semiconductors at a high temperature, e.g. 800 0C can also -be used, for example, inorganic compounds such as silicon oxide, aluminum oxide and aluminum nitride. As to organic resin film 108, materials which can be formed on a zone besides pattern 107 and removed se electively from pattern 107 and gate electrode 105. Insulating film 106 is provided on the whole surface of the sample as shown in Fig. 18 (3). For example, silicon nitride (SiN) film 106 is deposited in a thickness of 0.2 jim on the whole surface of the sample by the plasma CVD method, followed by annealing, to thus activate electrically the implanted element. Thereafter, insulating film pattern 106, source electrode 103 and drain electrode 104 are formed as shown in Fig. 18 (C). For example, as shown in Fig. 18 (C), SiO2 film 107 is removed with a buffered HF solution to obtain SiO2 film pattern 106 reversal to SiO2 film pattern 107, and the film 106 is then subjected to window-making (selective etching) by the ordinary photolithography and C74 plasma etching "followed by forming source electrode 103 and drain electrode 104. Finally, gate electrode 105 is formed by the use of the ordinary vapor deposition and lithographic technique as shown in Fig. 18 (D). It is to be noted herein that for the formation of gate electrode 105, a window of SiN film 106 is formed on a part corresponding correctly to active layer 102' in the preceding step, so the part where gate electrode 105 is directly contacted with an active layer, i.e. Schottky contact coincides correctly with active layer 102' and is not overlapped with active layer 102'. Therefore, as illustrated hereinafter, an MESFET excellent in microwave characteristics without an unnecessary increase of electrostatic capacitance can be obtained. An example of making the field effect transistor having the structure shown in Fig. 17 by the ion implantation method has been illustrated above, but it can be produced by the thermal diffusion method. That is, a shallow diffusion layer corresponding to active layer 102' of Fig. 18 (A) is firstly formed by contacting a dopant with a small diffusion constant with the surface of a substrate, followed by thermal diffusion, a mixed, diffusion layer consisting of a shallow diffusion layer and a deep diffusion layer, corresponding to active layer 102" of Fig. 18 (B) is ,then formed by contacting another dopant with a large diffusion constant with the site except directly under a gate using masking pattern 107 as a shield, followed by thermal diffusion, and finally, electrodes 103, 104 and 105 are formed in an analogous manner to the above described embodiment. Alternatively, the structure of Fig. 17 can be realised by depositing a dopant with a small diffusion constant on a gate part while depositing another dopant with a large diffusion constant on between a gate source, and then subjecting both the zones to thermal diffusion simultaneously. The shorter is the length of active layer 102' in Fig. 17, the smaller is the series resistance between a gate and source. This is a favourable character. However, shortening of this length is limited by the fine photolithography The relationship between the length of active layer 102' and that of the Schottky contact of gate electrode 105 will now be illustrated. In the case of a "normally on" type, which has a relatively thick active layer 102', even if the length of active layer 102' is somewhat longer than that of gate electrode 105, the properties are not significantly deteriorated, because such a problem does not arise that the part of active layer 102' not directly under a gate increases extremely the resistance between ,the gate and source since active layer 102' is relatively thick and accordingly, the thickness of a depletion layer from the surface toward the inside does not extend to the whole thickness of active layer 102'. On the contrary, in the case of a "normally off" type, in which the shallow active layer 102' is re latively thin, if the length of the shallow active layer 102' is greater than that of gate electrode 105, the de pletion layer in the region not directly beneath the gate will extend completely to the bottom of the shallow active layer thus resulting in a problem such that the resistance between the gate and source is markedly increased and in an extreme case, electric current is completely interruPted. In the "normally off" type, therefore, the length of gate electrode 105 should be larger than that of active layer 102'. However, in the Schottky contact of gate electrode 105, a part thereof exceeding the length of active layer 102' increases only the electrostatic capacity and has no effective function, and, accordingly, it is desirable in order to increase the operation speed of the element to hold the exceeding part as short as pos sible. That is, ideally, it is effective to form the Schottky junction of gate electrode 105 and active layer 102' to have equal length as shown in Fig. 17. According to the embodiment of the present invention, the characteristics of "normally off" type can remarkably be improved because active layer 102' and Schottky contact of gate electrode 105 are formed on the same site and with the same length by the self-alignment using insulating film 107. The seventh embodiment of the present invention will now be illustrated. Fig. 19 (A) and Fig. 19 (B) are cross-sectional views of the seventh embodiment of the MESFET according to the present invention, which comprises semi-insulating semiconductor substrate of GaAs 111, n-type active layer 112, source electrode 113, drain electrode 114, Schottkybarrier gate electrode 115 stable at high temperatures and insulating compound film 116 consisting of the gate electrode itself. In the structures of Fig. 19 (A) and (B), the surface of the active layer is level and the thickness of active layer 112" between a gate and source is larger than that of active layer 112' directly under the gate. In particular, active layer 112" is formed using gate electrode as a mask and source electrode 113 and drain electrode 114 are formed through insulating compound film 116 by the so-called self-alignment method. Accordingly, the position relationship of source electrode 113, drain electrode and gate electrode 115 with second active layer 112" is precisely determined. Thus, not only the production process is simple but also the yield is increased and at the same time, a fine patterning is possible. Fig. 20 (A) to Fig. 20(D) are cross sectional views to illustrate a process of producing an MESFET according to the present invention shown in F#g# 19- CA) As shown in Fig. 20 CA), in the'surface of semi-insulating semiconductor crystal substrate of GaAs ill is implanted 28Si+ ion to form active layer 112' with uniform thickness. The thickness and carrier concentration of this active layer are so selected that a desired pXnch- off voltage, e.g. +0.3 to -3 V be obtained. For example, a carrier concentration of about 1017 cm 3 and an active layer with a thickness of about 0.1 zm are required for realising a pinch-off voltage of -2.2 V and as ion implantation conditions, there are chosen an implantation energy of 120 KeV and an implanation quantity of 2 x lO dose/cm2 where the doping efficiency is regarded as 100%. The theoretical value of the carrier concentration distribution obtained under these conditions is shown by chain line 31 in Fig. 5. After forming active layer 112' with a uniform thickness, gate electrode 115 consisting of a metal -stable at high temperatures is formed thereon as shown in Fig. 20 (B). Using this gate electrode 115 as a mask, the second ion implantation is carried out to form a new active layer 112" on the non-masked site under such conditions that the implantation energy is made larger than that used in the first ion implantation so as to obtain a deeper implantation than in the first ion implantation and the implantation quantity is chosen in such a range that the final peak carrier concentration is not too large to prevent the dielectric breakdown by a voltage applied to a gate and to prevent an excessive increase of the gate capacitance. When an implantation energy of 400 KeV and an implantation quantity of 3.9 x 1012 dose/cm2 are chosen as such implanting conditions, for example, the theoretical value of the carrier concentration distribution is shown by broken line 32 in Fig. 5. The concentration of non-masked part 112" in active layer 112 corresponds to the sum of the concentration by the first ion implantation plus. that by the second ion implantation, which distribution is shown by solid line 33 in Fig. 5. As can be seen from Fig. 5, the total number of carriers in active layer 112" near source electrode 113 is about three times higher than that in active layer 112' directly under gate electrode 115 and, consequently, the gate-source resistance can be reduced to. about 1/3 or less as compared with the case where active layer 112' is uniformly formed. On thre other hand, since the teak carrier concentration in active layer 112" becomes only about 13% more than that in active layer 112', decrease of the breakdown voltage of a gate and increase of the gate capacitance are held very small. In this embodiment, Ti-W allow is used as gate electrode 115. For example, a Ti-W allow film with a thickness of 1.2 Pm is formed by sputtering and using a resist pattern formed thereon as a mask, it is subjected to plasma etching with a mixed gas of CF4 and 02 (5 t) thus ontaining gate electrode 115 as shown in Fig. 20 (B). Using this electrode as a mask, ion implantation is carried out to form second active layer 112", followed by electrically activating the implanted element. As shown in Fig. 20 (C), on the whole surface of gate electrode 115 is formed an insulating compound film 116 consisting of the gate metal itself as a basic material. In this embodiment, the surface of the gate electrode becomes an insulator by plasma anode oxidation to form an o insulating compound film having a thickness of 2000 A. At this time, the surface of the semiconductor substrate is oxidised, but it is easy to remove the GaAs oxide film selectively from insulating compound film 116 on the gate electrode. Then the production process is completed by forming an ohmic metal 'film on active layer 112 by vapor deposition in vacuum as shown in Fig. 20 (D) and thus obtaining source electrode 113 and drain electrode 114. Fig. 21 (A) to Fig. 21 (C) are cross-sectional views to illustrate a process of making an MESFET according to the present invention shown in Fig. 19 CB). After forming gate electrode 115 as shown in Fig. 20 (A) and Fig. 20 (B), inorganic compound film 117 is formed on the surface of the sample as exemplified in Fig. 21 (A) and annealed to activate electrically the implanted o element. In this embodiment, an SiO film of 1500 A in thickness, formed by vapor deposition in vacuum, is used as inorganic compound film 117. As the material of film 117 there can be used any insulating compounds which are not reacted with semiconductor substrate 112 and gate electrode 115 during annealing and there is no particular limitation as to material and forming method When the sample is subjected to plasma anodic oxidation as shown in Fig. 21 (B), the plasma oxidation proceeds on the both sides of gate electrode 115-only, not covered with inorganic compound film 117, and thus insulating compound film 116 is formed on the both sides of gate electrode 115 by chemically altering the gate electrode. Then the production process is completed by removing inorganic compound film 117, depositing an ohmic metal by vapor deposition in vacuum and thus forming source electrode 113 and drain electrode 114, as. shown in Fig. 21 (C). In the step of Fig. 21 (B), second active layer 112' is formed by ion implantation and thereafter, a high concentration layer of about 1018 cam , i.e. so + called n layer can be formed near the surface only, This is effective means for improving the ohmic properties of source electrode 113 and drain electrode 114. Since gate electrode 115 satisfies the reuirenent of the present invention if it serves as a mask for ion implantation or thermal diffusion and has a resistance to a high temperature process such as annealing or the like, as the material thereof there can be used not only Ti-W allows but also materials not reactive with semiconductors even at a high temperature, e.g. about 800 and excellent in heat resistance, for example, metals such as Ta, Nb, V, Mo and the like. Surface insulation of gate electrode 115 is not limited to the plasma oxidation employed in this embodiment, but can be carried out by formation of an oxide film such as by anodic oxidation or thermal oxidation, or by formation of a nitride film such as by plasma nitrification. Examples of making the field effect transistors having the structures shown in Fig. 19 CA) and Fig. 19 (B) by ion implantation have been illustrated above, but it can be produced by the thermal diffusion method. That is, a shallow diffusion layer corresponding to active layer 112 t of Fig. 19 (A) is firstly formed by contacting a dopant with a small diffusion constant with the surface of substrate, followed by thermal diffusion, a mixed diffusion layer consisting of a shallow diffusion layer and a deep diffusion layer, corresponding to active layer 112" of Fig. 20 (B) is then formed by contacting another dopant with a large diffusion constant with the site except directly under a gate using masking pattern 117 as a shield, followed by thermal diffusion, and finally, electrodes 113, 114 and 115 are formed in an analogous manner to the above described embodiment. Alternatively, the structures of Fig. 19 (A) and Fig. 19 (B) can be realised by depositing a dopant with a small diffusion constant on a gate part while depositing another dopant with a large diffusion constant on between a gate and source, and then subjecting both the zone to thermal diffusion simultaneously. As apparent from the foregoing illustration, in the seventh embodiment of the present invention, the same effect or merits can be obtained as in the first to sixth embodiments and the gap between gate electrode 115 and source electrode 113 can be decreased more remarkably. That is to say, the source series resistance'can be reduced to a very small value because both the electrodes are set apart by insulating film 116 only and can be formed o in the vicinity of several thousands A. The eighth embodiment of the present invention will now be illustrated. Fig. 22 is a cross sectional view of the eighth embodiment of the MESFET according to the present invention, which comprises semi-insulating semiconductór substrate of GaAs 121, n-type active layer 122, source electrode 123, drain electrode 124 and Schottky gate electrode 125. In the structure of Fig. 22, the surface of the active layer is flat and the thickness of active layer 122'"between a gate and source is larger than that of active layer 122' directly under the gate. In particular, gate electrode 125, ohmic implanted zone and deep implanted zone are formed through self-alignment This embodiment has various advantage, i.e. a small source resistance, simple production process, increased yield, possibility of fine working, etc. Fig. 23 (A) to Fig. 23 CD) are cross sectional views to illustrate a process of making an MESFET according to Fig. 23 (A), firstly, 28Si+ ion is implanted in the surface of semi-insulating semiconductor crystal substrate of GaAs 121 to form active layer 122' with a uniform thickness. The, thickness and carrier concentration of this active layer are so selected that a desired pinch- off voltage, e.g. +0.3 to -3 V be obtained. For example, 17 carrier concentration of about 1017 -3 a carrier concentration of about 1017 cm -3 and an active layer with a thickness of about 0.1 #m are required for realising a pinch-off voltage of -2.2 V and as ion implantation conditions, there are chosen an implantation energy of 120 KeV and an implantation quantity of 12 2 2 x 1012 dose/cm where the doping efficiency is regarded as 100 %. The theoretical value of the carrier concentration distribution is shown by chain line 31 in Fig. 5. After forming active layer 122' with a uniform thickress, stripe-like pattern 125 consisting of a high melting point metal such as TiW is formed thereon as shown in Fig. 23 (B). Using this pattern 125 as a mask, + the second ion implantation is carried out to form n layer 122" having a large carrier concentration on the non-masked site. The conditions of the second ion implantation are that the carrier concentration of the surface is so large, for example, an implantation energy of 50 KeV and implantation quantity of 2 x 1013 dose/cm2 that a good ohmic electrode is formed. As shown in Fig. 23 (C), the surface of high melting point metal pattern 125 is etched with an isotropic etchant such as phosphoric acid or dilute hydrofluoric acid to reduce the pattern width. Using this pattern as a mask, the third ion implantation is carried out to form a new active layer 122"'having a carrier concentration substantially similar to that of active layer 122' and a thickness larger than that of active layer 122' in a zone 122 w between n layer 122" and metallic pattern 125. The conditions of the third ion implantation are that the implantation energy is made larger than that used in the first ion implantation and the implantation quantity is chosen in such a range that the final peak carrier concentration is not too large to prevent the dielectric breakdown by a voltage applied to a gate and to prevent an excessive increase of the gate capacitance. When an implantation energy of 400 KeV and an implantation quantity of 3.9 x 1012 dose/cm2 are chosen as such implanting conditions, for example, the theoretical value of the carrier concentration distribution is shown by broken line 32 in Fig. 5. The concentration of active layer 122"' corresponds to the sum of the concentration by the first ion implantation plus the concentration by the third ion implantation, which distribution is shown by solid line 33 in Fig. 5. As can be seen from Fig. 5, the total number of carriers in active layer 122 ltl is about three times higher than that in active layer 122' directly under gate electrode 125 and, consequently, the gate-source resistance can be reduced to about 1/3 or less as compared with the case where active layer 122"' is uniformly formed to be same as active layer 122'. On the other hand, since the peak carrier concentration in active layer 122"' becomes only about 13 % more than that in active layer 122', decrease of the breakdown voltage of a gate and increase of the gate capacitance are held very small. A heat treatment is then carried out at 800 C for 20 minutes in an N2 atmosphere to effect electrical activation of the implanted ion. Finally, ohmic electrodes are formed on the ohmic zones as shown in Fig. 23 (D), thus obtaining a field effect transistor. It is favourable on characteristics that the length of active layer 122' in Fig. 22 is the shorter. However, shortening of this length is limited by the fine photolithography. The relationship between the length of active layer 122' and that of gate electrode 125 will now be illustrated. In the case of a "normally on" type, which has a relatively thick active layer 122', even if the length of active layer 122 t is somewhat longer than that of gate electrode 125, the properties are not significantly deteriorated, because such a problem does not arise that the part of active layer 122' not directly under a gate increases extremely the resistance between the gate and source since active layer 122' is relatively thick and accordingly, the thickness of a depletion layer from the surface toward the inside does not extend to the whole thickness of active 122'. On the contrary, in the case of a "normally off" type, in which the shallow active layer 122' is relatively thin, if the length of the shallow active layer 122' is greater than that of gate electrode 125, the depletion layer in the region not directly beneath the gate will extend completely to the bottom of the shallow active layer, thus resulting in such a problem that the resistance between the gate and source is markedly increased and in an extreme case, electric current is completely interru#pLed. In the "normally off" type, therefore, the length of gate electrode 125 should be larger than that of active layer 122'. However, a part of gate electrode 125, exceeding the length of active layer 122' increases only the electrostatic capacity and has no effective function and, accordingly, it is desirable to hold the exceeding part as short as possible so as to increase the operation speed of the element. That is, ideally, it is effective to form gate electrode 125 and active layer 122'.to have equal length as shown in Fig. 22, in particular, in the "normally off" type. According to this embodiment, using gate electrode 125 as a mask, an n layer is formed and a deep ion implantation is carried out, so the gate electrode, deep implanted layer and n layer are formed through selfalignment. Thus active layer 122' and gate electrode 125 are formed on the same site and with the same length and moreover, n layer 122" and gate electrode 125 are formed in an adjacent position, thus resulting in a further decreased source series resistance and remarkably improved characteristics of the "normally off" type. The ninth embodiment of the present invention will now be illustrated. Fig. 24 is a cross sectional view of the MESFET according to the present invention, which comprises semiinsulating semiconductor substrate of GaAs 131, n-type active layer 132, source electrode 133, drain electrode 134 and Schottky-barrier gate electrode 135. In the structure of Fig. 24, the surface of the active layer is flat and the thickness of active layer 132ill between a gate and source is larger than that of active layer 132' directly under the gate. Gate electrode 135 is correctly positioned to exactly coincide with active layer 132' without overlapping any of active layer 132", and n+ layers 136 and 137 are formed at the both sides of gate electrode 135 in the vicinity of about 0.5 Jim. According to this embodiment of the MESFET of the present invention, as described above, thick active layer 132" and n layer are provided between gate elec + trode 135 and source electrode 133 and n layer 136 and gate electrode 135 are provided to be sufficiently adjacent, for example, by about 0.5 pm, thus resulting in a decreased source resistance and good high frequency characteristics. Fig. 25 (A) to Fig. 25 (D) are cross-sectional views to illustrate an example of a process for the production of an MESFET according to the present invention shown in Fig. 24. As shown in Fig. 25 CA), 28 ion is implanted in the surface of semi-insulating substrate of GaAs 131 to form active layer 132' with a uniform thickness. The thickness and carrier concentration of this active layer are selected suitably so as to give a desired pinch-off voltage, e.g. +0.3 to -3 V. For example, 17 -3 a carrier concentration of abour 10 cm -and an active layer of about 0.1 pm in thickness are reauired for realising a pinch-off voltage of 12.2 V and as ion implantation conditions, there are chosen an implantation energy of 120 KeV and an implantation quantity of 2 x 1012 2 dose/cm where the doping efficiency is regarded as 100 %, The theoretical value of the carrier concentration distribution obtained under these conditions is shown by chain line 31 in Fig. 5. After forming active layer 132' with a uniform thickness, a high melting point metal 135 not reactive with GaAs, such as Ti, Ta, W, V, Nb, Mo or alloys thereof, is vapor-deposited on active layer 1321 and further photoresist pattern 138 is formed thereon, as shown in Fig. 25 (B). Using this photoresist pattern 138 as a mask, metal 135 is subjected to etching and further to side etching to form a metal pattern 135 narrower than photoresist pattern 138 under this pattern 138 as shown in Fig. 25 (C). Thereafter, using this photoresist pattern 138 as a mask, the second ion implantation is carried out to form n layers 26 and 27 on the non-masked sites. Then resist 138 is removed and using pattern 135 as a mask, the third ion implantation is carried out to form a new active layer 132 tw on the non-masked sites, as shown in Fig. 25 (D). The ion implanting conditions of the third processing are that the implantation energy is made larger than that used in the first ion implantation and the implantation quantity is chosen in. such a range that the final peak carrier concentration is not too large to prevent the dielectric breakdown by a voltage applied to a gate and to prevent an excessive increase of the gate capacitance. When an implantation energy of 400 KeV and an implantation quantity of 3.9 x 1012 dose/cm2 are chosen as such implanting conditions, for example, the theoretical value of the carrier concentration distribution is shown by broken line 32 in Fig. 5. The concentration of part 132" where the second ion implantation has not been carried out, of the non-masked part of active layer 132, corresponds to the sum of the concentration by the first ion implantation and that by the third ion implantation, which distribution is shown by solid line 33 in Fig. 5. As can be seen from Fig. 5, the total number of carriers in active layer 132" between n layer 136 or 137 and active layer 132' is about three times higher than that in active layer 132' directly under gate electrode 135 and, consequently, the gate-source resistance can be reduced to about 1/3 or less as compared with the case where active layer 132" is uniformly formed to be the same as active layer 132'. On the other hand, since the peak carrier concentration in active layer 132 becomes only about 13 % more than that in active layer 132', decrease of the breakdown voltage of a gate and increase of the gate capacitance are held very small. Electrical activation of the implanted element is then carried out by annealing and source electrode 133 and drain electrode 134 are fomed on predetermined sites of n layers 136 and 137, thus obtaining an MESFET as shown in Fig. 24. According to tho embodiment of the present invention, the characteristics of "normally off type can remarkably be improved, because active layer 132' and gate electrode 135 are formed on the same site and with the same length through self-alignment by carrying out ion implantation using pattern 135 as a mask. The shorter is the length of active layer 132" + between n layer 136 or 137 and active layer 132', the smaller is the series resistance between the gate and source. This gives a favourable performance. In this embodiment, the length of active layer 132" depends on the contraction difference between patterns 135 and 138 and can be very small, e.g. approximately 0.5r4m. In the foregoing embodiments of the present invention, GaAs is used as a. semiconductor crystal, but if necessary, InP or other Grout III - Group -V compound semiconductors or other semiconductors such as Si can be used. As apparent from the foregoing detailed description, according to the present invention, there is provided an MESFET which is excellent in high frequency characteristics, exhibits a high breakdown voltage and can be produced with a high yield, because an active layer between a gate and source is thick, the carrier concentration is substantially constant over the whole active layer and the surface of the active layer is made flat.

Claims: CLAIMS: 1. A Schottky-barrier gate field effect transistor comprising a semi-insulating semiconductor substrate, an active layer formed on the surface of the semiconductor substrate and a source electrode, Schottky-barrier gate electrode and drain electrode formed on the active layer, in which the active layer has a first part having such a thickness as to give a predetermined pinch-off voltage and being formed near the gate electrode and a second part having a substantially similar carrier concentration to that of the first part and a larger thickness than the first part and being formed between the Schottky-barrier gate electrode and source electrode, and the upper surfaces of the first part and second part of the active layer are in a same plane. 2. The Schottky-barrier gate field effect transistor of Claim 1, wherein the Schottky-barrier gate electrode covers completely at least the first part of the active layer. 3. The Schottky-barrier gate field effect transistor of Claim 1, wherein the Schottky-barrier gate electrode is correctly positioned on the surface part of the first part of the active layer and the source electrode is positioned on the surface part of the second part of the active layer. 4. The Schottky-barrier gate field effect transistor of Claim 1, wherein the Schottky-barrier gate electrode is formed on the first part of the active layer through an insulating film having an opening at the same site as the first part, the gate electrode has a length of at least same as that of the first part and the Schottky contact is formed at.the opening of the insulating film only. 5. The Schottky-barrier gate field effect transistor of Claim 4, wherein the insulating film is of a material selected from the group consisting of inorganic compounds such as silicon nitride, silicon oxide, aluminum oxide and aluminum nitride. 6. The Schottky-barrier gate field effect transistor of Claim 1, wherein the both sides or whole surfaces of the electrode consisting of a metal stable at high temperatures is covered with an insulating compound film formed by chemically altering metal and the source electrode and drain electrode are respectively formed adjacently through the insulating compound film. 7. The Schottky-barrier gate field effect transistor of Claim 6, wherein the metal is selected from the group consisting of Ti-W alloys, Ta, Nb, V and Mo. 8. The Schottky-barrier gate field effect transistor of Claim 1, wherein the gate electrode consisting of a metal stable at high temperatures is formed on the same site and with the same length as the first part and active layers having a higher carrier concentration are formed at the both sides of the gate electrode and in the vicinity thereof. 9. The Schottky-barrier gate field effect transistor of Claim 8, wherein the metal is selected from the group consisting of Ti-W alloys, Ta, Nb, V and Mo. 10. The Schottky-barrier gate field effect transistor of Claim 8,,wherein an n layer is additionally provided in the vicinity of the gate electrode. 11. A process for the production of a Schottkybarrier gate field effect transistor, which comprises forming a first active layer of one electrically conductive type semiconductor crystal with a thickness and carrier concentration chosen so as to give a predetermined pinch-off voltage, forming a pattern thereon, introducing an impurity for giving the same electrically conductive type as the first active layer into the first active layer by ion implantation or thermal diffusion selectively through the pattern as a mask to form a second active layer,.and then forming electrodes. 12. A process for the production of a Schottkybarrier gate field effect transistor, which comprises forming a first active layer of one electrically conductive type semiconductor crystal with a thickness and carrier concentration chosen so as to give a predetermined pinch-off voltage, forming a stripe-like resist pattern thereon, introducing an impurity for giving the same electrically conductive type as the first active layer into the first active layer by ion implantation or thermal diffusion selectively through the pattern as a mask to form a second deeper active layer, removing the pattern and then forming a source electrode, drain electrode and gate electrode on the resulting level active layer. 13. The process of Claim 11 or Claim 12, wherein the first active layer is formed by implanting 28Si+ ion uniformly in semi-insulating GaAs substrate. 14. The process of Claim 11 or Claim 12, wherein the pinch-off voltage ranges from +0.3 to -3 V. 15. The process of Claim 11 or Claim 12, wherein the second active layer is formed by-a deeper ion implantation than in the formation of the first active layer. 16. A process for the production of a'Schottkybarrier gate field effect transistor, which comprises forming a first active layer of one electrically conductive type semiconductor crystal with a thickness and carrier concentration chosen so as to give a predetermined pinch-off voltage, forming a stripe-like resist pattern thereon, introducing an impurity of giving the same electrically conductive type as the first active layer into the first active layer by ion implantation or thermal diffusion selectively through the pattern as a mask, forming a pattern, reversed rightly to the resist pattern by the lift off method, introducing an impurity for giving the same electrically conductive type as the first active layer into a part of the window part through the reversed pattern as mask by slant ion implantation removing the reversed pattern, subjecting to annealing for the electrical activation of the ion-implanted impurity forming a Schottky-barrier electrode and forming a source electrode and a drain electrode. 17. The process of Claim 16, wherein the reversed pattern is formed by vapor deposition of a metal selected from the group consisting of Al, Ta, Mo, W and Ti, followed by lift off. 18. The process of Claim 16, wherein the annealing is carried out while protecting the crystal surface by coating with Si3N4 or by controlling the pressure of Au or P at a temperature of 700 to 850 OC. 19. A process for the production of a Schottkybarrier gate field effect transistor, which comprises forming a first active layer of one electrically conductive type semiconductor crystal with a thickness and carrier concentration chosen so as to give a predetermined pinch-off voltage, forming a stripe-like resist pattern thereon, introducing an impurity for giving the same electrically conductive type as the first active layer into the first active layer by ion implantation or thermal diffusion selectively through the pattern as a mask to form a second deeper active layer at the both sides of the first active layer, forming a reversed pattern rightly to the stripe-like pattern by the lift off method, vapor depositing a Schottky gate metal thereon, forming a Schottky gate electrode positioned correctly on the first active layer by removing the reversed pattern mask and forming a source electrode and a drain electrode on the second deeper active layer. 20. The process of Claim 19, wherein the reversed pattern is formed by vapor-deposition of Au, followed by lift off. 21. The process of Claim 19, wherein the Schottky gate electrode is of a metal selected from the group consisting of Al, Ta, Mo, W and Ti. 22. A process for the production of a Schottkybarrier gate field effect transistor, which comprises forming a first active layer of one electrically conductive type semiconductor crystal with a thickness and carrier concentration chosen so as to give a predetermined pinch-off voltage, forming a stripe-like pattern consisting of an insulating material, introducing an impurity for giving the same electrically conductive type as the first active layer into the first active layer by.ion implantation or thermal diffusion selectively through the pattern as a mask to form a second deeper..active layer at the both sides of the first active layer, subjecting to annealing to activate electrically the implanted element, forming a source electrode and drain electrode on the second active layer, applying a photoresist thereto to be level, subjecting to plasma etching to remove a part of the photoresist and to expose the upper part of the pattern from the photoresist, removing the pattern only to expose the first active layer, vapor depositing a gate metal and then removing the photoresist. 23. The process of Claim 22, wherein the insulating material is selected from the group consisting of inorganic compounds such as silicon nitride, silicon oxide, aluminum oxide and aluminum nitride, and organic resins. 24. A process for the production of a Schottkybarrier gate field effect transistor, which comprises forming an active layer with a uniform thickness, forming a source electrode and drain electrode on the surface of the active layer, forming a masking pattern for forming a gate electrode and an inactivated zone, implanting an inactivating ion through the masking pattern to form an inactivated zone, vapor depositing a metal for a gate electrode and then removing the masking pattern to form a gate electrode. 25. The process of Claim 24, wherein the masking pattern is of a photoresist. 26. The process of Claim 25, wherein the inactivating ion is selected from the group consisting of 0+, Cr+, B+ and the like. 27. A process for the production of a Schottkybarrier gate field effect transistor, which comprises forming a first active layer of one electrically conductive type semiconductor crystal with a thickness and carrier concentration chosen so as to give a predetermined pinch-off voltage, forming a pattern consisting of an insulating material, introducing an impurity for giving the same electrically conductive type as the first active layer into the first active layer by ion implantation or thermal diffusion selectively through the pattern as a mask to form a second deeper active layer at the both sides of the first active layer, forming an insu lating film thereon, and after removing the pattern and subjecting the insulating film to window making, forming a source electrode, drain electrode and gate electrode. 28. The process of Claim 27, wherein the insulating material for the pattern is SiO2 and the insulating film is of Si3N4. 29. A process for the production of a Schottkybarrier gate field effect transistor, which comprises forming a first active layer or one electrically conductive type semiconductor crystal with a thickness and carrier concentration chosen so as to give a predetermined pinch-off voltage, forming a stripe-like heat resistance metal film, forming a high carrier concentration ohmic layer of the same electrically conductive type as the active layer by ion implantation through the stripe-like metal film as a mask, etching a part of the stripe-like metal film with an isotropic etchant to narrow the width thereof, effecting a deeper ion implantation at a larger accelerating voltage through the stripe-like metal film as a mask, subjecting to a heat treatment for the electrical activation of the implanted ion and then forming ohmic metals on the ohmic zones. 30. The process of Claim 29, wherein the heat resistance metal is selected from the group consisting of Ti-W alloys, Ta, Nb, V and Mo. 31. The process of Claim 29, wherein the isotropic etchant is selected from the group consisting of phosphoric acid and hydrofluoric acid. 32. The process of Claim 29, wherein the heat treatment is carried out at 800 C in an N2 atmosphere.

Inventors: EBATA, TOSHIKI, HAYASHI, HIDEKI, IIYAMA, MICHITOMO, KIKUCHI, KENICHI
Applicants: SUMITOMO ELECTRIC INDUSTRIES LIMITED
Application year: 1982
Main classification: H01L29
IPC codes: H01L29, H01L21