ELECTRICAL REACTOR CONSTRUCTION

Abstract: The winding of wire to create a coil is complex from an equipment and manufacturing standpoint. Once manufactured, there is little latitude for the on-site user to alter or fabricate a coil according to specific needs. A system of creating coils, windings, inductors and capacitors utilizes wafer stacks having suitable pass-throughs (48) and voids (50) in the insulation portion of the wafer permits one of several different types of these electrical elements to be made according to the particular orientation and order in which the wafers are stacked; each wafer comprises a thin insulator panel (A, B) with a conductive film across one surface, which could possibly be created photographically.

Description: Qeetrieal Reactor Coj-Satrt-Gt-ton Descπ t-Lc-rt Background σf the -Invention The invention is in the field of eleciTical co-QLs, windings, and reactors mcl-αding capacitors and inductors, although it particul----rly applies to inductor construction. Typically, coils, windings and inductors are made by winding * coirtanuously a wire cr wires around an iron core or ho-ELow core depending on the use. This is a process tint naturally requires a certain amount of finesse, especially in the making of large inductance ele ents- In spite of the fact that a great many electrical and electronic components are now made solid state or photographically, typically co-Q-s and windings are stall created in the same traditLonal manner of winding the wire about a core. Aside from the manufacturing complexity of the wire technique, also generally speaking the winding inductor, or capacitor, must be pre-taHcred to a specific magnetic strength, resistance, inductance cr capacitance, qualities which aside from elements, specifically manufactured to be variable, cannot be easily adapted on site to particular specifications. Summary σf the ---nveπt-i-oii The present invention solves the above stated problem by providing wafer elements each con-^tuting an insulat r panel on which a film of conductor is photographically cr otherwise applied and shaped, with these wafers being collated cr stack-ed to create the part-JCTi-ar element desired without requiring any winding. In the several d-vffersit embodiments, in addition to the general purpose lam---narly-^on---1-ructed wafer co-ft^ are units which may be 5 alternatively arranged to define an -inductor cr capacitor, one embodiment which may be utGi-zed as an inductor with either a single co-H cr multiple coaxial coϋ with the same number of wafers, and yet another embodiment in which a angle wafer type can be stacked aJta-T-ately in upright and inverted pc-ati i to create an ID inductor. One advantage in tins type of constructicπ is the simp-lic-άty of the actual assembly of the wafers wherein once the wafers have been made, they can be .assemt-led into a ecu of any desired coϋ length without any special equipment. Thus, in addition to compϋetely • 15 -e mi-nat-Lng the wire winding the equipment required to make a conventional co-Q, the on-site user is able to determine the electrical qualities required and fabricate a coϋ vary quickly and -simply from a supply of wafers, and alterratively in at least one embodiment --shown herein, the end user may also rearrange the same wafers, 20 and with, the addition of a couple of ir-su-at-or sheets, create a capacitor rather than an inductor or coϋ so that the same -unit may combine capacitance and inductance to form a f-ϋter cr resonant - a -I O c-ircuit in a single components Brief DescrS-pta-αi-- of the- Drawings Figure 1 is a perspective view of a stack of two alternate wafer types? Figure 2 is a section taken along * line 2-2 of Figure 5; Figure 3 is a section taken along line 3-3 of Figure 7; Figure - is a perspective view of a completed coϋ stack according to the scheme of Figure 1 Figure 5 is a top elevation view of a fragment of a type (a) wafer? Figure 6 is a top elevation view of a fragment of a type (a) wafer upside down; Figure 7 is a top elevation view of a fragment of a type (b) wafer; Figure 8 is a top -elevation view of a type (b) wafer upside down; Figure 9 is a section of the connections between three ad^cent wafers in an inductor stack such, as Figure 4; Figure 10 is a section taken along line -------ID of Figure 7; Figure IL is a perspective view of a fragment of a type (a) nsuLatorr c?.:? - Figur 12 is a similar view of a type (b) --nsulatcr Figure 13 is a perspective exploded view of a typical stack of elements used to form a capacitor Figure 14 is a diagrammatic fragmentary view of a modification of the wafer; Figure 15 is a section taken along line 15-15 of Figure 14; Figure 15 is a diagrammatic view of the elect-rical connections in an inductor made f-rom wafers shown in Figures 14 and 15' Figure 17 is yet .another embodiment of wafer? Figure 1-8 is a section taken along line 1-8-18 of Figure 17; Figure 19 is a top elevation view of a type (b) waf er of a general type -town in Figure 17; Figure 20 is a section taken along line 20-20 of Figure 19; Figure a is an exploded perspective of an inductcr configuration made from, unmodified wafers of the type shown in Figures 17 and. 19; Figure 22 is a section taken through a typical stack made according to Figure 23; Figure 23 is a section of a typical stack wherein the intermediate conductor bridges are broken and intermediate conductor rivets are ----stalled; and * \_, - ----i Figure 24 is a perspective view of a typical lead wire arrangement. Figure 25 is a section of a typical capacitor pass^hrough made according to the disclosure. Detailed Description of the Preferred Embodiments The principal concept of the invention is that wafers be provided that are so cut, and that have conductor films on ' their surfaces that ate so contoured, that the wafers may be assembled in a stack to provide a single coϋ cr * winding, cr in some instances concentric co-Qs, cr in so e instances capacitors. The wafers shown in the first sheet of -drawings are provided in two different types, which are identified as type (a) and type (b), and can be used to define a w-mding αr co-OL sLmply by a-J-ternating (aMbKaMb)-, etc., cr by the utilization of two additional -i-nsulatαr f-ELms with the proper orientation these wafers can be reorganized to ' define a capacitor. Figure 5 indicates at 20 a type (a) wafer of the first e bodim-eπt. This wafer has an insulator panel 22 and a conductive fϋm 24 which is shaped around the peripheral areas of the insulator 22, to define a fcroad conductive loop with adjacent end points 26 and 28 that respectively define a receiving contact 30 which may be contacted flrom above by another w-afer, and a pass-throt-gh contact 32 which passes through -an aperture 34 as best seen in Figure 2 to make contact with the receiving contact 30 of a subsequent waf o . lb should be noted to c---3r--fy the relations in the drawings that the insulative panel 22, which is a rigid farm-defining member, may be a continuous -flat panel with no apertures other than the aperture 3 far electrLcal pass-through, in which instance the coϋ would have no hollow cere. However, in the instant embodiment, to make the first -Dlustrated embodiment universally applicable, a central core opening 36 ' is made through t-hp insulator 22 so that it penetrates the entire- panel 20, and an additional adjoining void 38 -also passes completely through, the insulator as well as the conductor, which as wϋL be understood below, is inoperative in a co-H configuration but p-ermits the wafers to be arranged to define a capacitor as weH. It should also be noted that the flats 40 and the assembly holes 42 best seen in Figure 1 have no function other than identification of the wafer and permitting the easy assembly thereof. Whereas the central core opening 36 and the void 38 pas completely through the insulator, the ends of the conductive inductcr 24 must be separated, at least in the coϋ embodiment, by a. narrow open, channel 44. This channel need not pass thrσu^i the i-r-sulater, as it would only weaken the structure. The second type of wafer is the type (b) wafer shown in Figures 7 et seq which is substantially identical to the first wafer •and will be re-numbered only to identify the receiving contact 46, the pass-through contact 48 and the void 50. Both wafers have a -----jngitudinal axis 52 about which they can be rotated far re-arieπtation in the -capacitor assembly described below. The pass-through conductors 32 -and 48 are preferably formed by- an extension of the conductive material from the fUm 24 and define a thin, rivet-shaped contact 54 shown in Figures 2, 3 and 9- Any other -suitable pass-through conductor could be used. Turning now to the co bination of the type (a) and type (b) wafers necessary to create a coil, it can be seen from Figure 1 that all that is nece-sary is to alternate type (a) and type (b) in a stack. Due to the conf-igurations of these two variant wafers, the pass- through makes contact to ma-ir-tain the same rotational direction of current flow like a co-ϋed wire, which is clockwise as seen firjrn the top in Figure These wafers may be assembled in any number desired, with the contacts automatically being made as shown in Figure 9, such that a stack shown in Figure 4 may be created. This stack may be held, together with bolts through the assembly holes 42, and a central core 56 could be inserted as shown. This core could, of course, also be rectangular or horseshoe-shaped, or even _ --. w a bar, and inductively couple a secondary stack so that a transformer is created. The co-EL could be geometrically modified in any d-a-areai-fLe fashion within the bounds of the wafer concept to create windings for motor or generator stater αr armature windings, cr coϋ resistors, cathode ray deflector coils, or far any otter application calling far a coϋ or winding. It is thus clear that the user of the co-EL may modify at wϋL by unbolting the stack the amount of resistance, inductance and magnetic fi-ux capability inherent in his element He also may utilize the same wafer -configuration to create a -capacitor, as shown in Figures H throujgi 13. The only additional elements required to create a capacitor are two types of insulator layers, type (a) and type (b) which have cutouts at 58 and 60 respectively. When these insulative layers are arranged in the configuration shown in Figure 13, each ------sulator cn the respective waf r passes through the adjacent wafer to contact the once removed insulator so that the wafers leapfrog in overlapping fashicn connecting alternate conductors together to define two separate interstJtfaTty alternated conductor groups. To clarify this relation, in Figure 13 the top layer is a type (a) wafer turned upside down followed by a type (a) insulator, a right side up (a) wafer, an upside down (b) wafer, a (b) insulator, and a right ade up (b) wafer, and so forth.. A --itt-Le study wϋL reveal that this is essentially an (aMbXaWb) style co-Q. arrangement with an identical arrangement turned upside down and shuffled into the first stack, with the facing conductors being separated by added insulators where necessary. Each pass- -hrough would pass through not only its own -insulator but also an adjacent conductor .and -Insulator, so that special pa-------throughs 62, indicated in Figure 25, would need to be used--- These could be provided as rivet inserts which could be inserted into the standard pa-s- -xoughs of the type (a) and (b) wafers to avoid requiring spec-i-alizεd construction. The above stated arrangement sets forth two basic styles of w-afer, that is type (a) and type (b), that can be combined to create either a co-Q- cr capacitor with slight modification.. Of course, there are any variations of this, ut--πMng the same basic configuration mc-h-iding a solid, uπi-πterrupted insulator without a central cere opening 36, with the central portion being covered with the conductor fiLm and the eliminatiαn of the channel 44 if the waf r is adapted exc-Lusively far use as a capacitor. Conversely, if the wafer is to be used exclusively in an inductor cr other co-ϋ assembly, the voids 38 can be omitted and several other styles of terminal patterns- on the wafers could be used. -30- 3-fc would stall be necessary to use two different types, type (a) and type (b), of wafer in order to insure that the current continuaes in either the clockwise αr countej-x-ilockwise direction without reversing itself from wafer to wafer. This would be true in an -Ω--π---at-2r-conductor wafer, although it could be avoided as indicated in Figures 14 through 16 if a doub-l---> ----su-Iated conductor sandwich is us-ed. In this implemeπtatic-π, as shown in Figure 15, the sandwich 64- comprising upper .and lower i-nsulators 66 and 68 has a central conductor 70 and up and down pas- -hroughs 72 and 74 permits a d-ngle wafer type to be used for the entire ecu construction with it being flipped alternately upside down about a ---oigitud-mal a-as to achieve the configuration shown diagram matically in Figure 16. The disadvantage of this embodiment, of course, is that it does not accord itself to standard photographic electronic component production wherein a conductor film is esteblished on a -single rigid irsulative substrate. Turning to yet another embodiment iTlustrated in Figures 17 though 3* t would, of course,, be possible to modify the above described ecu type by replacing the single conductor loop per wafer, with: two or more loops which are either wound in series, cr define separate loops which connect to ad-^ceπt, co-responding separate loops with pass-fchrougbs. An iTlnstration of a combination of both ~- ' -31- these alternatives is shown in wafers * 76 of Figures 17 and 19. These wafers, being provided in type (a) and type (b) for the same .reason stated above, ut-Dize dual conductors 78 with intermediate contact points 80 defining receiving .and connection points connected with a fc-reakafc-l bridge 82. 3 the configuration shown in Figures 17 through 20 the bridge is not broken and a standard conductor configuration sLm-Q-ar to that shown in Figures 1 and. 4 is established, except each wafer * is double-wound, is shown, ϋi ord-er to create a coaxial pair of windings out of a single wafer stack, the bridges 82 are broken and a rivet-like pass-through connecter 84 is pressed into the pre-drf- ed holes in the insulator to create a double co-EL as best seen in Figure 23. -Eh this last embodiment as in the others it is, of course, necessary to take off lead wires from certain of the wafers, and such a specialized wafer is shown in Figure 24 at 86 wherein lead wires 88 are connected to the appropriate terminals and exit the wafer in any suitable manner. Other -variations would include the pcssLb-Qity of using half αr partial co-Ds, particularly in the embodiment shown in Figure 4, in which a cere is used and the half coils might be press-mated together around the ex-isting cere to define the co-EL Additionally, ceramic -32- --------ulators could be used, and in the event a capacitor alone is deared, a single ele ent could be used with suitably positioned voids and contacts such that it could be flipped alternately upside down as as * are wafers * and the element in Figures 14 through l£ to create a capacitor. Wafers * could be designed that could be ganged in para-Hel in groups of two or more to make high current windings, and the same* basic t---chnique could be used by arranging parallel conductor, panels in a ji with, suitable connections being made, and pouring in a liquid dialectric which would solidify to a solid ma-s, or remain liquid--. -En any of its implemeπtatiα-is, the invention sets forth a convenient style taking advantage of current manufacturing techniques far the creation of a wide variety cc-fls, windings, resistors and reactive devices and even deflective ecus such as for cathode ray tubes. -En addition to those shown above, virtually any com b-i-πatioπ of current ca-rrying -capacity, concent-ricaHy wound multiple secondary transfor ers, and unitary filters and cscD-latαr units can be created.

Claims: -33- L A superimposed wafer electrical element comprising? (a) a series of wafers: each having an --nsulative sheet and a conductor layer bonded to said insulative sheet; (b) portions of said H-sulative sheet being removed to define at least one pass-*hrough aperture and having a contact electrically connected to said conductor layer and passing through said aperture? and - (c) said wafers being arranged in a stack such that by virtue of the electrical integrity established by the contact of each wafer contacting the subsequent wafer in -aid stack, an elect-rical element having predetermined properties is created. 2. Structure according to Claim 1 wherein: (a) said conductive layers define at least one continuous conductor * farming at least one open loop having a first and a second end paint; (b) each of said wafers defines said conductor end points in substantiaTly the same locations as the end points of every other of said wafers? (c) said wafers fall into two groups r a first group having a contact contacting said first end point and passing through said • 4.4- in--n-il----tive sheet, and a second group having a contact contacting said second end poin and passing through, said insulative sheet and the conductors of eac group i-raversLng mutually angularly oppositely directed paths fro said first to said second endpcάπt; (d) said wafers being arranged in a stack alternating wafers from group 1 and group 2 such that a contact f-rom each group 1 wafer contacts the first end point of the conductor of the subsequent group 2 wafer which has a contact on its second conductor end point contacting a subsequent group 1 waf-er on its first conductor terminal, and so forth such that a continuious co-O. is formed with all loops -----oping in the same rotøtiαn----l d recticn to define a CO---L 3. Structure according to Claim 2 wherein each of said conductors defines a co-EL of at least 750° having a second pair of end points intermediate said first and second end poiπt---v and connected by a breakaway tridge such that said conductor may be operated as a angle co-H cr, by breaking of said bridge, as two separate ecus. 4. Structure according to Claim 3 and inc-luding pass-tJ rough apertures disposed beneath said intermediate end points and pass-through rivets instaTlablft in pairs to connect to said -inte mediate pair of endpoiπts to contact through the last mentioned apertures inter ediate endpoints - ' of adjacent wafers to create two separate coaxial coϋs when said bridges .are broken. 5. Structure according to Claim 2 wherein said contact compris-es 5 an integraL pass-through extension of said conductor layer. 6. Structure according to Claim 2 wherein said wafers each define a. central opening mutually aligned in said stack such that the coϋ defined by said stack can be selectable used as a hoUow-cαre inductor -Ω αr having a cere inserted through said central opening. 7. Structure according to Claim 1 wherein each, of said wafers has a complete void therethrough and said contacts are positioned on each wafer to pass through the ' void of the ad^cent wafer and contact 15 the wafer- once removed, whereby a -capacitor is created. 8. Structure according to Claim 1 wherein: (a) said wafers may be flipped about a rotational axis for stacking, and said wafers fall into two types .arranged relative to the 20 rotationaL axis- as foUowst (b) a type (a) wafer having receiving and pass-through contacts in a row paraT-el to and on one side of said axis and a void positioned -26- at the virtual image of said receiving contact on the opposite side of said axis? (c) a type (b) wafer having pas--- -hrσugh and receiving contacts positioned to align with the receiving and pass-through contacts of said type (a) wafers respectively, and defining a void positicned at the virtual image of said receiving contact on the opposite side of said axis, and including two insulatcr sheets, type (a) insulaters having a void coincident with the receiving contact and the void of said type (a) wafers, and type (b) i-r-su-tators- having a void coinciding with the receiving contact and void of said type (b) wafers, whereby said wafers may be alternately stacked to create a coil-, αr al-teπatively stacked in the following order to create a -capacitor-. Type (a) waf r, type (b) wafer upside down, type (b) --isulator, type (b) wafer, type (a) wafer upside down, type (a) -insulator, with this pattern repeating as desired. 9.. Structure according to Claim 1 and including a second -insulative sheet bonded to the opposite side of -said conductive layer than the first menticned sheet, and said conductor defines a loop with a first and second end point exposed through apertures in respective ones of said :i-nsu--ative sheets and being so positiα ed as to reverse places when said wafer is turned upside down, whereby said wafers when stacked with alternate wafers upside down create a coiL ■ ϋr. Ξ«

Inventors: CARILLO ERNIE
Applicants: CARILLO ERNIE
Application year: 1982
Main classification: H01F5
IPC codes: H01F17