LIGHT-ACTIVATED SEMICONDUCTOR DEVICE

Abstract: A light-activated semiconductor device comprising a semiconductor body (20) constructed by laminating a plural­ ity of semiconductor layers (12, 14, 16 and 18) having alternately different conductivity types. A cathode electrode (22) bearing a light-receiving penetrating hole (26) is depo­ sited on one side of the semiconductor body (20), and an anode electrode (24) is laid on the opposite side of the semiconductor body (20). The semiconductor body (20) is formed of a first region (28) which is spread from the light-receiving penetrating hole (26) to the opposite side of the semiconductor body (20) and in which a long carrier lifetime is assured, and the other second region (30) than the first region (28) in which the carrier lifetime is reduced.

Description: Light-activated semiconductor device This invention relates to a light-activated semiconductor device and a method of manufacturing the same. A light-activated semiconductor device, for example, a light-activated thyristor is actuated by a light trigger signal instead of an electric trigger signal capable of being used with the ordinary thyristor. This trigger light is an infrared ray slightly shorter than 1.15 microns corresponding to the energy gap (the energy width of a forbidden band) of silicon constituting a semiconductor substrate. The trigger light is irradiated on the light-receiving section of a light-activated thyristor to generate carriers in the semiconductor substrate. As compared with the ordinary electric triggered thyristor, the above-mentioned light-activated thyristor has the advantage of more easily insulating a control circuit and power circuit. Further, the light-activated thyristor which connects a control circuit and power circuit together by a light has the farther advantage of being less affected by noises. Therefore, application of the light-activated thyristor makes it unnecessary to provide an insulation gate transformer, thereby assuring the miniaturization and light weight of a device provided with the light-activated thyristor. The light-activated thyristor which eliminates the occurrence of an erroneous ignition resulting from noises is effectively applicable not only to a logical controlling circuit but also a high voltage device. Therefore, the research and development of a high voltage-large capacity light-activated thyristor are attempted for use with a D.C. transmission converter. A high voltage thyristor used with a D.C. transmission converter is demanded to have a high critical rate of rise of off-state voltage (dv/dt capability) and a high critical rate of rise of on-state current (di/dt capability) in order to reduce a turnoff time. The turnoff time tq is expressed as follows: EMI2.1 where: T = lifetime of a carrier IH = magnitude of holding current IF = magnitude of forward current With a high voltage converter, the turnoff time is demanded to be less than 400 microseconds. In case of IH = 100 milliamperes, and IF = 1,000 amperes, then there results 400 microseconds > T ±n1,000 0.1 Therefore, X < 40 microseconds should be established. A light source for supplying a trigger signal to a light-activated thyristor may be formed of a sunlight, incandescent lamp, neon lamp, xenon lamp, or lightemitting diode. A GaAs infrared-emitting diode has a wavelength approximating 1 micron which carries out a very effective trigger action for a light-activated thyristor. The above-mentioned diode generally of the extremely miniaturized form can emit a pulsated light trigger signal. Therefore, a light-activated thyristor device assembled with the above-mentioned light-emitting diode can be effectively used with a light-coupling circuit. However, a light-emitting diode in current use fails to produce a large amount of light. Where, therefore, it is attempted to apply the commercially available light-emitting diode as a trigger light source, it is necessary to increase the trigger sensitivity of a light-activated thyristor scores of times over that of an electric trigger thyristor. The lifetime of a carrier has to be prolonged in order to elevate the trigger sensitivity of the light-activated thyristor. Fig. 1 shows the relationship between the light trigger sensitivity and carrier lifetime of a light-activated thyristor having a certain geometric form and impurity diffusion profile. The light trigger sensitivity is expressed in terms of a minimum quantity of trigger light. Where a carrier lifetime is 50 microseconds, then a minimum trigger light quantity is about 3 milliwatts. Where, however, a carrier lifetime indicates 150 microseconds, then the minimum trigger light quantity is about 1.5 milliwatts, namely, about half the minimum trigger light quantity required when the carrier lifetime is 50 microseconds. As described above, the carrier lifetime should be reduced in order to elevate the critical rate of rise of off-state voltage (dv/dt capability), and be increased in order to raise light trigger sensitivity. In other words, the critical rate of rise of off-state voltage (dv/dt capability) is inversely proportional to the light trigger sensitivity. To date, various light-receiving structures have been proposed for a light-activated thyristor in order to improve trade-off between the light trigger sensitivity and critical rate of rise of off-state voltage (dv/dt capability). Some of the proposed lightreceiving structures are disclosed in "Light-activated power thyristors", W. Gerlach, Evr. Solid State Device Res. Conf. 6'th '76, pp. 111-133. This invention has been accomplished to resolve the aforementioned difficulties by diffusing an impurity in a semiconductor substrate with a particular profile, instead of by improvement on the light-receiving structure of a light-activated thyristor. It is accordingly the object of this invention to provide a light-activated semiconductor device which is effectively applicable to large power transmission, and which can elevate the light trigger sensitivity without reducing the aforementioned dv/dt capability. Another object of the invention is to provide a method of manufacturing the above-mentioned lightactivated semiconductor device. To attain the above-mentioned object, this invention provides a light-activated semiconductor device which comprises a semiconductor body constructed by laminating a plurality of semiconductor layers having alternately different conductivity types, and wherein the semiconductor body has a first region which penetrates the semiconductor body from one side thereof on which a light-receiving section is formed to the opposite side thereof and in which a generated carrier has a long lifetime, and a second region which purposely reduces the lifetime of a generated carrier. In the above-mentioned first region, a light trigger sensitivity is increased, and in the second region (conductive region) the aforesaid dv/dt capability is raised. Other objects and advantages of the invention will become apparent from the following detailed description when taken in conjunction with the accompanying drawings, in which: Fig. 1 graphically indicates the relationship between the carrier lifetime and minimum triggering level; Fig. 2 is an oblique view of a light-activated thyristor embodying this invention; Fig. 3 is a cross sectional view on line 111-Ill of the light-activated thyristor of Fig. 2; Figs. 4a to 4h illustrate the cross sections of the subject light-activated thyristor corresponding to the sequential manufacturing steps; Fig. 5 is an enlarged sectional view of the subject light-activated thyristor given in supplement to the description of the manufacturing method thereof; and Figs. 6a to 6e show the cross sections of the subject light-activated thyristor corresponding to the sequential manufacturing steps different from those of Fig. 4. Description is now given with reference to Figs. 2 and 3 of a light-activated semiconductor device embodying this invention. A light-activated thyristor 10 comprises: semiconductor body 20 formed of a first p-type semiconductor layer 12 constructed by doping a gallium (Ga) in a silicon (Si) layer of high resistivity, a first n-type semiconductor layer 14 constructed by doping a phosphorus (P) in a silicon (Si) layer, a second p-type semiconductor layer 16 constructed by doping a gallium (Ga) in a silicon (Si) and a second n-type semiconductor layer 18 constructed by doping a phosphorus (P) in a silicon (Si); an aluminum cathode electrode 22; and an aluminum anode electrode 24. A light-receiving penetrating hole 26 is formed at the center of the aluminum cathode electrode 22. Gold is diffused in the semiconductor body 20 with a prescribed profile as a carrier lifetime killer. Namely, the gold is little diffused in the central portion (light-receiving region) 28 of the semiconductor body 20 which is spread from the exposed portion of the semiconductor body 20 facing the light-receiving penetrating hole 26 to the opposite side of the semiconductor body 20. Gold is selectively diffused as a carrier lifetime killer in the other outer peripheral portion (conductive region) 30 of the semiconductor body 20 than the central portion 28 thereof. The light-activated thyristor 10 constructed as described above can provide a different carrier lifetime in the light-receiving region 28 of the penetrating hole 26 from that which is obtained in the conductive region 30 of the cathode electrode 22. Namely, a carrier lifetime is prolonged in the light-receiving region 28, and reduced in the conductive region 30. Therefore, the light trigger sensitivity is elevated in the light-receiving region 28, and the dv/dt capability is increased in the conductive region 30. Once the light-receiving region 28 is actuated, much current does not flow through the region 28, little affecting the turnoff time of the light-activated thyristor 10, even though the carrier lifetime may be long in the light-receiving region 28. Since the light trigger sensitivity can be elevated without reducing the critical rate of rise of off-state voltage (dv/dt capability), it is possible to apply a light source emitting a relatively small quantity of light such as an infrared-emitting diode as light triggering means. With a 2 kV thyristor, the first n-type semiconductor layer 16 in which a carrier is generated by light should have an impurity concentration of at least 1 x 1014 /cm3. In this case, a carrier lifetime in the light-receiving region 28 increases over 100 microseconds. Figs. 4a to 4h indicate the sequential steps of manufacturing a light-activated thyristor embodying this invention. Fig. 4a denotes an n-type semiconductor wafer 32 constructed by doping a phosphorus (P) in a silicon (Si) layer of high specific resistivity. Gallium (Ga), for example, is thermally diffused in both sides of the semiconductor wafer 32 to provide a first p-type semiconductor layer 12 and second p-type semiconductor layer 16. A region in which gallium (Ga) is not diffused constitutes a first n-type semiconductor layer 14 (Fig. 4b). Thereafter, phosphorus (P), for example, is thermally diffused from the surface of the second p-type semiconductor layer 16 to form a second n-type semiconductor layer 18. Eventually, a semiconductor body 20 (Fig. 4c) is formed by superposing layers having alternately arranged p and n conductivity types. Both sides of the semiconductor body 20 are thermally oxidized to form a silicon oxide (SiO2) layer 34 (Fig. 4d). The silicon oxide (SiO2) layer 34 is selectively etched by photolithography to provide a silicon oxide layer pattern 36 (Fig. 4e). A heavy metal, for example, gold is selectively diffused as a carrier lifetime killer from both sides of the semiconductor body 20 with the silicon oxide layer pattern 36 used as a mask, thereby providing the central portion 28 in which gold is not diffused and the peripheral portion 30 in which gold is diffused (Fig. 4f). The silicon oxide layer pattern 36 is removed (Fig. 4g). An aluminum cathode electrode 22 having a light-receiving penetrating hole 26 is deposited on the surface of the second n-type semiconductor layer 18. An aluminum anode electrode 24 is deposited on the surface of the first p-type semiconductor layer 12. The light-receiving penetrating hole 26 is formed in a region in which gold is not doped (Fig. 4h). The diffusion constant of gold in a silicon layer is scores of times larger than that of gold diffusion constant in a silicon oxide (six2) layer. Therefore, gold can be selectively diffused with the silicon oxide (SiO2) layer used as a mask (Fig. 4h). Therefore, a carrier lifetime only in the conductive peripheral portion 30 of the semiconductor body 20 in which gold is diffused can be reduced to a prescribed extent, without decreasing a carrier lifetime in the central portion 28 of the semiconductor body 20 which is covered with the silicon oxide layer pattern 36. Description is now given with reference to Fig. 5 of the process of determining the size of the circular silicon oxide layer pattern 36 used as a mask in manufacturing a light-activated semiconductor device. Now let it be assumed that the diameter of the circular SiO2 pattern mask is represented by xl; the diameter of the light-receiving penetrating hole 26 by x2, and the thickness of the semiconductor wafer 32 by d. Where, gold is diffused from both sides of the wafer 32 to a depth of d/2, then the gold is horizontally diffused to an extent of 0.8 x d/2, Therefore, the diameter xl of the circular SiO2 pattern mask will be sufficient if it is designed as follows: xl = x2 + 0.8*d2 = = x2 + 0.8d 2 In other words, it will well serve the purpose if the diameter of the SiO2 pattern mask is made substantially equal to a sum of the diameter of the light-receiving penetrating hole 26 and the thickness d of the semi conductor wafer 32. Description is now given with reference to Figs. 6a to 6e of a different method of manufacturing a light activated thyristor embodying this invention from that which was previously mentioned. Fig. 6a denotes an n-type semiconductor wafer 32 constructed by doping a phosphorus (P) in a silicon (Si) layer of high specific resistivity. Gallium (Ga), for example, is thermally diffused in both sides of the semiconductor wafer 32 to provide a first p-type semiconductor layer 12 and a second p-type semiconductor layer 16. The region of the semiconductor body 20 in which gallium (Ga) is not thermally diffused constitutes a first n-type semiconductor layer 14 (Fig. 6b). Thereafter, phosphorus (P), for example, is thermally diffused from the surface of the second p-type semiconductor layer 16 to form a second n-type semiconductor layer 18, eventually providing a semiconductor body 20 consisting of alternately superposed n and p layers (Fig. 6c). Then a shield film 38 is formed at the center of the second n-type semiconductor layer 18 to shut off the passage of radiation. This shield film 38 should have a sufficiently great density and thickness to be impervious to radiation. Where, for example, electron beams are applied, then the above-mentioned shield film should preferably be formed of aluminum, lead or wolfram with a greater thickness than 4 or 5 millimeters. Radiation 40, for example, electron beams are irradiated on the semiconductor body 20 in a substantially perpendicular direction with the shield film 38 used as a mask. This procedure does not reduce the carrier lifetime in the light-receiving region below the shielding film 38, but decreases a carrier lifetime in the other conductive region to a prescribed level (Fig. 6d). Thereafter, the shield film 38 is removed to form an aluminum cathode electrode 22 having a light-receiving penetrating hole 26 on the surface of the second n-type semiconductor layer 18 and an aluminum anode electrode 24 on the surface of the first p-type semiconductor layer 12. The light-receiving penetrating hole 26 is formed in that region of the second n-type semiconductor layer 18 from which the shield film 38 was removed (Fig. 6e). As in the first embodiment, the second embodiment of Figs. 6a to 6e enables a carrier lifetime only in the conductive peripheral portion 30 of the semiconductor body 20 on which radiation was projected to be reduced to a prescribed level, without decreasing a carrier lifetime in the central portion 28 of the semiconductor body 20 which is covered with the shield film 38.

Claims: Claims: 1. A light-activated semiconductor device characterized by comprising a semiconductor body (20) constructed by laminating a plurality of semiconductor layers (12, 14, 16 and 18) having alternately different conductivity types and formed of a first region (28) which is spread from one side of said semiconductor body (20) to the opposite side thereof and in which'a long carrier lifetime is assured, and thekothêr second region (30) than said first region (28) in which the carrier lifetime is reduced; a first electrode (22) which is formed on one side of the semiconductor body and whose portion facing said first region (28) assuring a long carrier lifetime is provided with a light-receiving penetrating hole (26); and a second electrode (24) deposited on the opposite side of the semiconductor body (20). 2. The light-activated semiconductor device according to claim 1, characterized in that the semiconductor body (20) comprises a first semiconductor layer (12) of one conductivity type; a second semiconductor layer (14) formed on said first semiconductor layer with the opposite conductivity type; a third semiconductor layer (16) deposited on said second semiconductor layer with said one conductivity type; and a fourth semiconductor layer (18) laid on said third semiconductor layer with the opposite conductivity. type to that of said third semiconductor layer. 3. The light-activated semiconductor device according to claim 1 or 2, characterized in that the second region (30) in which the carrier lifetime is reduced contains a material acting as a carrier lifetime killer. 4. The light-activated semiconductor device according to claim 3, characterized in that the material acting as a carrier lifetime killer is gold. 5. A method of manufacturing a light-activated semiconductor device characterized by comprising the steps of: forming an insulation layer (34) on both sides of the semiconductor body; selectively etching the insulation layers to provide masks; diffusing the lifetime killer in the semiconductor body with said etched insulation layers (36) used as masks; removing the etched insulation layers (36); forming a first electrode (22) bearing a lightreceiving penetrating hole (26) on one side of the semiconductor body (20); and forming a second electrode (24) all over the opposite side of the semiconductor body (20). 6. The method according to claim 5, characterized in that the diameter (xl) of each etched insulation layer (36) is made substantially equal to a sum of the diameter of the light-receiving penetrating hole (26) and the thickness (d) of the semiconductor body (20). 7. The method according to claim 5 or 6, characterized in that the material acting as a carrier lifetime killer is gold. 8. A method of manufacturing a light-activated semiconductor device characterized by comprising the steps of: forming a radiation-shielding film (38) as a mask on at least one side of the semiconductor body (20); projecting radiation (40) on the semiconductor body (20) with said radiation-shielding film (38) used as a mask; removing the radiation-shielding film (38); forming a first electrode (22) bearing a light-receiving penetrating hole (26) on one side of the semiconductor body (20); and forming a second electrode (24) all over the opposite side of the semiconductor body (20). 9. The method according to claim 8, characterized in that the radiation (40) is formed of electron beams.

Inventors: MATSUDA, HIDEO
Applicants: TOKYO SHIBAURA DENKI KABUSHIKI KAISHA
Application year: 1981
Main classification: H01L31
IPC codes: H01L31, H01L29