THREE-TERMINAL SEMICONDUCTOR DEVICE

Abstract: A semiconductor device with performance in the 10⁻¹² second range has an emitter region (1) with a large source of carriers and a low barrier in a thin section (8) whose thickness is less than the length of the mean free path of an electron. This thin section is in contact with a high conductivity base region (2) having a width in the vicinity of the length of the mean free path of an electron providing thereby hot electron transfer to a collector region (3) having a high barrier.

Description: SEMICONDUCTOR DEVICE The technical field of the invention is that of semiconductor devices that perform amplification with very wide bandwidth and switching in the 10 second range. As performance advantages in semiconductor devices are identified, speed of response has been a limiting factor and efforts have been set forth to reduce the dimensions of the devices and increase carrier velocity so as to reduce the transit time of the carriers. With such efforts, however, have come difficulty in manufacture and serious restrictions in the magnitude of voltages in operation. One particularly high-speed device was reported in PROC. IRE, Vol. 50, p. 1527, 1962. The device was composed of two Schottky barrier diodes back-to-back on a metal base. The device, however, was limited in that a long traverse time was required for the carriers to pass through the depletion layer in the emitter and a long capacitive charging time was required for the emitter rectifying contact. A need is present in the art for a device of this type wherein such disadvantages are avoided. Figs. 1, 2 and 3 are a dimensionally correlated illustration of the device of the invention wherein Fig. 1 is a structural schematic. Fig. 2 is an energy level diagram, and Fig. 3 is an energy level diagram under the influence of bias. Fig. 4 is a graph of the output electrical performance of the device of the invention. Fig. 5 is a graph of the input electrical performance of the invention. Fig. 6 is an energy level diagram illustrating a modification of the device of the invention. Fig. 7 is an level energy diagram of the device of Fig. 6 under the influence of bias. The device of the invention has an emitter region with a first section adjacent an external ohmic contact that will serve as a heavy source of carriers and a second thin section of lightly doped semiconductor material positioned adjacent to a base region of metal providing thereby in the emitter region a large supply of carriers retained by a low barrier. The metal base region in turn has a thin width dimension of the order of the length of the mean free path of an electron providing thereby rapid carrier transit. The collector region has a higher barrier than that of the emitter at the interface with the base region. The collector region also has a low resistivity region in the portion adjacent to an ohmic external electrode. Referring to Fig. 1, a schematic structural illustration of the device of the invention is provided having an emitter region 1, a base region 2 and a collector region 3, each in turn having respectively an emitter external connection 4, a base external connection 5 and a collector external connection 6. The emitter region 1 is made up of two sections 7 and 8. The first emitter section 7 serves as a large supply of carriers, is labelled N + and may be conveniently formed by heavy doping. The second emitter section 8 pro vides a low barrier to injected carrier flow into the base region 2. The emitter section 8 is labelled N and may be formed by lightly doping within the section defined by the width dimension labelled The base region 2 is made of high conductivity material such as metal having a width in the vicinity of the length of the mean free path of an electron so that carrier transit time and the number of collisions are minimized. The collector region is made up of a first section 9, labelled N, forming a barrier to carrier flow in the base. The collector barrier is higher than the barrier that is formed by the emitter section 8. The collector region 3 also has a second collector section 10 labelled N which serves to keep the collector resistance and ohmic contact resistance low, and which may be concurrently fabricated by heavier doping. The N, N+ and N designations in Fig. 1 are provided to indicate relative doping with conductivity type determining impurities. The criteria of the collector region 3 are satisfied by the Schottky barrier type contact known in the art. Referring next to Fig. 2 an energy level diagram dimensionally correlated with the structure of Fig. 1 is provided showing in a first portion corresponding to the section 7 of Fig. 1, a condition wherein the conduction band is below the Fermi level thereby providing a large reservoir of carriers. In a second portion corresponding to section 8 of Fig. 1 as the emitter barrier width labelled dEB, the number of available carriers is reduced such as by light doping. This has the effect that the conduction band then rises and produces barrier height labelled #E The height of the barrier is controlled by the semiconductor metal interface. It should be noted, however, that for very small values of emitter barrier width the doping level of the reservoir of carriers in section 7 asserts some control. The adjacent high conductivity metal base 3 operates to establish the conduction band at a lower level and reduces the base spreading resistance. The width of the metal base is in the vicinity of the length of the mean free path of an electron to minimize transit time and number of collisions. The collector barrier height #C is illustrated. The collector barrier height #C is higher than the emitter barrier height fE. The conduction band then paraboically becomes lower through the Fermi level as a result of the heavy doping of collector section 10 thereby to reduce collector resistance and minimize contact resistance. The structure of the invention as described in connection with Figs. 1 and 2 when biased, injects carriers from a large supply over a small barrier where they travel ballistically as hot electrons directly to the collector. The metal base 2 adjacent to the section 8 which is a lightly doped thin dimensioned semiconductor section operates to provide a low barrier and an immediate potential drop to an injected carrier. The advantages of a low base spreading resistance with an injection barrier are thus simultaneously provided. Under conditions of forward bias of the emitter and reverse bias of the collector, the energy level diagram of the device is illustrated in Fig. 3. Referring to Fig. 3, in the emitter section 7, a large quantity of carriers is present where the conduction band is lower than the Fermi level. The application of bias shown as VEB produces a potential barrier in the vicinity of the interface of the thin emitter section 8 while the potential drops toward that of the base 2. Under these conditions, the carriers once havinq traversed the barrier now can traverse both the semiconductor region and the base region directly because the section 8 and the base 2 are each less than the length of the mean free path of an electron passing over the collector barrier the height of which, fc,has been selected for collection by choice of materials. Thus the invention operates by providing a large source of carriers impeded by a low thin barrier in the emitter adjacent to a metal base so that having traversed the barrier, the carriers are accelerated by the potential drop toward the base and due to the thin emitter and base regions, transit time to the collector barrier is short. Under conditions of a base-emitter bias voltage greater than that which the thin emitter section 8 will support, it is advisable to operate the device in pulse mode. The criteria of the structure of the invention can be met in fabrication by a number of semiconductor process techniques. The technique of molecular beam epitaxy is favored for its controllability. Referring next to Fig. 4, an output performance graph is provided illustrating the operating characteristics under the influence of bias in what is known for three-terminal devices as the common base operation. Operating curves labelled a, b and c are provided for three illustrative levels of emitter-base bias VEB The curve a is for the condition O < VEB < ,c/e The curve b is for the condition VBC + 0.1 V. The curve c is for the condition VEB + 0.2 V. In the graph of Fig. 4 for negative VBc, the various operating curves merge into a single line labelled x, defined by the forward characteristics of the emitter barrier. Similarly, for positive values of V BC the various operational curves merge to a single line labelled y, defined by the breakdown voltage of the reversely biased collector barrier. The slope of the performance curves in the region z closely parallel to the ordinate, are defined by the reverse saturation current of the collector barrier. The load line crosses the operating curves at two points, which when the device is used in a switching mode define the "on" or "off" conditions. A dotted line encompasses a range for continuous operation. The continuous operation range is defined by the conditions where the emitter-base bias voltage is greater than the collector barrier height divided by e. Referring next to Fig. 5 which illustrates the input characteristics in the common emitter type of circuit operation, the onset of a dynamic negative resistance is observed at the value of VEB equivalent to the collector barrier height divided by e. As the emitter barrier VEB is increased/the base current increases approximately by the 3-halves power of the increase in the emitter base bias until a value of VEB equivalent to the collector barrier height divided by e is reached, in other words 1B = IE X VEB3/ . At this point most of the emitter current will proceed to the collector, the base current will drop and the dynamic negative resistance takes place and the base current then follows a relationship defined by (1-a)IE, ,the product of the quantity 1 minus #, and the emitter current. The device of Fig. 1 has certain features critical to its operation. For emitter region 1 it is required that there be a first section adjacent to the input terminal that serves as a supplier of carriers,and that there be a semiconductor section 8 adjacent to a metal base which provides a barrier at the interface with the section 7,and that the second section 8 have a very thin dimension. These conditions may be met by constructing sections 7 and 8 using the material GaAs for the section 7 doped to about 5 x 1018 and for the section 8 reducing the doping to about 1015. The semiconductor material chosen for the emitter section 8 should have a wide energy gap so that few thermal carriers will exist in the conduction band. The emitter current density will be space-charge limited for low voltages and obeys an expression known in the art as "Child's Law", as described in Equation 1. Equation 1: EMI7.1 where C is the dielectric constant. e is the electron charge. m* is the electron effective mass. The transit time through the emitter region is considered to follow the expression in Equation 2 for the material GaAs. Equation 2: EMI7.2 An example device constructed of the material may be biased under the conditions set forth in TABLE I. TABLE I m Xm = 0.07 dEB = 2002 VEB = 0.1 V Under the conditions of TABLE I the traverse time (T) through the emitter as determined by Equation 2 will be 10 13 seconds. The traverse time through the metal base will also be 10 seconds where the base width dB is selected to be 100 The collector barrier is of the type known in the art as a Schottky barrier. The equivalent dynamic resistance of the section 8 of the emitter will follow the expression in Equation 3. Equation 3: EMI8.1 where E is 11.5 s0 and the cross sectional area of the 0 device is 1 micron square. The input time constant of the device of the invention using the example GaAs material is in the vicinity of 0.4 x 10 13 seconds so that the speed limitation of the device will be determined by the base-collector barrier which in turn responds in the vicinity of 10 seconds. The emitter base bias voltage will occur mostly across section 8, the thin lightly doped region. Referring next to Fig. 6, a variation in the structure of Fig. 1 can be provided wherein the section 8 of the emitter region is a semiconductor such as CdS which forms a nonrectifying contact with the base 2 and the emitter. With such a modification the emitter barrier width should be made wide enough that the accumulation layers which make the semiconductor degenerate on both sides next to the interfaces with the metal will not swamp the total film thickness. This is illustrated by the fact that the conduction band potential level arcs up above the Fermi level inside dEB. For the material CdS, the dimension for the emitter barrier width should increase to about 600 Referring next to Fig. 7, an energy diagram is provided under the influence of bias. The bias provides carriers from the metal-emitter contact over the barrier in the nonrectifying semiconductor and the thin dimensions of both the emitter barrier region and the base permit the carriers to be accelerated directly over the collector barrier without losing any energy due to electron-electron and electron-phonon collisions. In both the Fig. 1 and Fig. 6 embodiments, the lightly doped N section and the non-rectifying semiconductor CdS section are empty of free carriers and thereby support the potential difference VEB In operation carriers spill over a small barrier at the section 7 section 8 interface or the metal non-rectifying semiconductor CdS interface and then proceed toward the base. Since the thickness of the N or example CdS section is close to the length of the mean free path of the electrons, they will reach the base with essentially the same energy they were emitted by, which is and andthey will have excess energy above the Fermi level or, in other words, be "hot". Further, since the base is selected to be thin enough, the electrons will traverse it without collisions and maintain their excess energy so as to surmount the collector barrier fC - It will also be apparent to one skilled in the art that the base-collector combination 9-10 may be replaced by a metaloxide-metal contact. Such a structure reduces the transient time through the collector. Similarly the metal base 2 of Fig. 1 may be replaced by a heavily doped semiconductor. Such a structure will have the advantages of a controllably grown heterojunction of the emitter region 1 base region 2 interface thereby reducing some deleterious interface properties such as surface states and defects, and provides a longer mean free path in the epitaxial base. What has beed described is a device wherein a large quantity of carriers and a low barrier emitter region is provided adjacent to a thin high conductivity base such as a metal, so that a quantity of carriers can pass the barrier and traverse the base directly to the collector barrier. Since the structure provides conditions where these carriers do not collide in either the thin barrier region of the emitter region or in the thin base, they maintain a quasi monoenergetic current distribution directly to the collector.

Claims: CLAIMS 1. A semiconductor device having emitter (1) and collect or regions (3), each forming separated rectifying con tact with a base region (2), characterized by said base region having high conductivity and a separation dimension from said emitter to said col lector that is less than the length of the mean free carrier path, said emitter region having in a first section (7) thereof a source of carriers positioning thereby the conduction band of said semiconductor material below the Fermi level in said first section and in a second section (8) a barrier of a first magnitude and a dimension less than the length of the mean free path of an electron, and said collector region having a barrier to electron flow of a second magnitude greater than said first magnitude. 2. The device of claim 1, wherein said base region (2) is metal and said collector region (3) is a Schottky barrier contact. 3. The device of claim 1, wherein said base region (2) is a high conductivity crystalline semiconductor. 4. The device of claim 1, wherein said emitter region (1) is doped heavily in said first section (7) and doped lightly in said second section (8). 5. The device of claim 2, wherein said emitter region (1) is GaAs. 6. The device of claim 5, wherein said collector region (3) is metal, separated by oxide from said metal base region (2). 7. A transistor with an emitter region (1), a high con ductivity type base region (2) and a collector region (3) characterized by said emitter region having a first section (7) operable to supply a large source of carriers and a second section (8) positioned between said source of carriers and said base region (2), said second section having a carrier distribution such that the conduction band in said second region under the influence of bias is higher at the interface of said first and said second regions than it is at the interface of said second region and said base region 8. The transistor of claim 7, wherein said emitter regions (7, 8) are doped GaAs, said base region (2) is metal, and said collector region (3) is a Schottky barrier. 9. The transistor of claim 7, wherein said emitter regions (7, 8) and said base region (2) consist of GaAs with different dopings. 10. The transistor of claim 7, wherein said first emitter region (7) is metal, said second emitter region (8) is CdS, and said base region (2) is metal.

Inventors: HEIBLUM, MORDEHAI
Applicants: INTERNATIONAL BUSINESS MACHINES CORPORATION
Application year: 1981
Main classification: H01L29
IPC codes: H01L29