LIGHT EMITTING SEMICONDUCTOR STRUCTURE

Abstract: Light emitting semiconductor structure consisting of a thin active layer(1), which layer at the underside passes to a further or not structured doped layer(2) in direct contact with a first electrode(4), and which layer at the upperside passes into a further or not structured oppositely doped layer(3), in direct contact with a second electrode(5). Said upper layer comprises an inside barrier(6) of which the permeability for carriers depends on the voltage applied to a third elec­ trode(7) which third electrode is positioned on the outside of said upper layer in the proximity of said second electrode.

Description: Light emitting semiconductor structure. The invention relates to a light emitting semiconductor structure, consisting of a thin active layer, which layer at the underside passes into a further or not structured doped layer in direct contact with a first electrode, and which layer at the upper side passes into a further or not structured oppositely doped layer in direct contact with a second electrode, which electrodes during operation of the structure are connected to a current source to generate a current of carriers through the light emitting semiconductor structure. Such a semiconductor structure is for instance described in the book "Optoelektronik I" by G.Winstel and C.Weyrich, published by Springer Verlag, Berlin, 1980, especially chapters 5 and 6. In the active layer between the oppositely doped layers light is generated by stimulated emission. Said light may be emitted by so called LED's, light emitting diodes, or laserdiodes. In the latter case for instance two sides of the active layer are embodied as mutually parallel mirrors of which at least one is partly pervious to the generated light. To generate light the structure is by means of the first and second electrode in conducting direction connected to a current source, which in case of laser diodes functions as energy pump. The current source injects electrons in the active junction, which electrons by means of recombination with holes are brought from the conduction band into the valence band under simultaneous emission of electromagnetic radiation. On the other hand electrons may be brought from the valence band into the conduction band under absorption of electromagnetic radiation. When the current delivered by said current source is increased above a certain threshold value, then the light emission resulting from recombination will exceed the absorption of light. In that case a situation is reached in which electromagnetic radiation in the form of light is emitted, whereby the intensity of said emitted radiation depends on the value of the current delivered by said current source. When furthermore the end surfaces of the structure are embodied as (partly pervious) mirrors, then a resonance cavity is created and the emission of light is concentrated into a very narrow wave length band. Then a laser function is realized. Further information about the general principles of light emitting diodes and semiconductor lasers may be found in the above mentioned book. Such semiconductor configurations can be used for a great variety of purposes for instance in light amplifiers for glass fiber cables, combinations of light transmitters and -receivers, optocouplings, optical memory systems, etc. In many of these applications the current value through the structure has to be controlled to be able to vary the intensity of the emitted light. To that end it is for instance possible to connect the current source through a con troltransistor to the semiconductor diodelaser. In general silicon transistors are used as control transistor, whereas light emitting semiconductor structures are in general made from GaAs or GaAlAs, GaP or other suitable semiconductor materials, which semiconductor materials permit a much higher current value through a cross sectional unit area than silicon. The disadvantage thereof is,that the silicon control transistor is necessarily much more voluminous to be able to carry the necessary current value than the light emitting GaAs- or GaAlAs-structure which is controlled by said control transistor. It is already attempted to solve this problem by making the control transistor not from silicon, but from the same material as the light emitting semiconductor diode. Such a solution is for instance described in the article Caltech begins to integrate optical and electronics components , published in Laser Focus, May 1980, page 44. The therein described structure comprises on the one hand a laser diode and on the other hand a field effect transistor, both integrated besides each other onto a GaAs-substrate and mutually connected by means of metal conducting strips. In many of the above mentioned applications light emitting semiconductor diodes are used in combination with light detectors or photosensitive elements. Such a light detector also needs space so that the size of the circuit increases still further when a light detector is integrated. In "Philips Technisch Tijdschrift", volume 39, 1980, nr. 4, pages 97 - 107 a semiconductor laser is described which is together with a photodiode accommodated into one single housing. In addition to the relatively extended size said circuit has the disadvantage that it is necessary to adjust the photodiode accurately in relation to the laser diode to let the combination function in the intended way. For this purpose special mounting means are used in the described configuration. The disadvantages related to the use of special mounting means are for a major part eliminated by a solution which is described in the article "Integrated GaAs-Al#Garx As injection lasers and detectors with etched reflectors" published in wIEEE International Electronics Development Meeting , Washington, December 3-5, 1979. In this article a combination of a laserdiode and a photodiode is described mounted beside each other onto the same semiconductor substrate. A disadvantage of said solution is the rather circumstantial fabrication method, whereby very high demands are made upon the accuracy, whereas furthermore in principle still two separate components are fabricated in a predetermined mutually relation onto a common substrate. A further solution is described in the USA Patent 4,127,792. According to this patent the current flowing from the upper side to the lower side of the semiconductor structure through the active layer of the light emitting diode is controlled by fields generated from ringshaped, specially doped semiconductor areas inside the semiconductor structure, which areas are connected to electrodes positioned at the sides of the semiconductor structure. Also said solution has the disadvantage of a circumstantial fabrication method, especially in relation to the ringshaped semiconductor areas and the sidewards third electrode. An object of the invention is now to at least considerably eliminate the disadvantages of said above mentioned known configurations. Therefore the invention offers a light emiting semiconductor structure consisting of a thin active layer, which layer at the underside passes into a further or not structured doped layer in direct contact with a first electrode, and which layer at the upper side passes into a further or not structured oppositely doped layer in direct contact with a second electrode, which electrodes during operation of the structure are connected to a current source to generate a current of carriers through the light emitting semi conductor structure characterized in that said upper layer comprises an inside barrier of which the permeability for carriers depends on the voltage applied to a third electrode positioned on the outside of said upper layer in the proximity of said second electrode. By varying the electric voltage applied to said third electrode it is possible to control the value of the current flowing through said barrier and therewith the value of the current flowing through the light emitting diode and the emission of light. Because not the outer current, flowing through a control transistor in the current path between the current source and the electrodes is controlled, but instead the current in the light emitting semiconductor structure itself is directly influenced, a very compact structure is realized. Because furthermore no separate connections are present between a control transistor and the light emitting semiconductor diode structure and because parasitic capacities in the integrated structure are very small a very short response time is attained. The physical process determining the passage of carriers through said barrier may be based on the withdrawal or injection of carriers into the barrier area for instance by means of field effects. In the above mentioned it is stated that the semiconductor layers above and underneath the light emitting layer may be further structured. That implies that it is possible to vary (partly) the crystallographic structure of the layers, that parts of said layers may be differently doped or that parts of said layers are made from different semiconductor materials. In the following the configuration of the semiconductor structure according to the invention will be discussed in detail referring to preferred embodiments. Thereby the functioning of the invention will be explained without limiting the scope of the invention to the theoretical explanation of said operation. A preferred embodiment of the semiconductor structure according to the invention is characterized in that the third electrode is attached to the outside of said upper layer, electrically insulated from the semiconductor material of said layer and positioned at some distance of said second electrode, whereby said barrier is embodied as an insulating layer inside said oppositely doped upper layer having an opening, whereby at least the edges of said barrier in the proximity of said opening are positioned close underneath that part of the surface of said upper layer where said third electrode is positioned such, that by means of a field generated by said third electrode when a control voltage is applied thereto the current of carriers between the first and second electrode through the opening in said barrier is more or less cut off. A more compact configuration is reached with a further embodiment of the invention according to which the third electrode is positioned inside said upper layer and functions also as barrier, which barrier comprises an opening of which the width at the most is equal to twice the maximum width of the potential barrier, created around the third electrode as result of the voltage' applied to said electrode and of the Schottky-effect in the semi conductor material near the junction of the metal electrode and the semiconductor. The width of said potential barrier varies with the electrode voltage ap plied to said third electrode. Therewith it is attained that with a voltage below the avalanche voltage it is possible by means of the potential barrier generated by the Schottky-effect to cut off the carrier current between the first and second electrode through said opening. Further information about Schottky-barriers is found in the book "Halbleiterdioden", by R.Paul, published by VEB Verlag Technik, Berlin, 1976, especially chapter 4. In some applications a number of light emitting diode are used, especially semiconductor laser diodes, for instance in a multichannel optical amplifier or optical detection array. Preferable in such applications the second electrode comprises an elongated electrode segment and elongated mutually parallel electrode fingers extending preferably approximately perpendicular to said elongated electrode segment, whereby the third electrode comprises a number of elongated electrode strips extending between the electrode fingers of said second electrode, and said insulating barrier comprises a number of barrier segments positioned underneath the electrode fingers of said second electrode, whereby the intermediate openings between said barrier segments are positioned underneath the electrode strips of said third electrode. In a further development of said embodiment it is possible to control all the laserdiodes, which are in this way constructed and integrated together, each separately. To that end each of said electrode strips of the third electrode is connected to a separate control voltage source. When a configuration is used in which the Schottky-efect is utilized, as is already mentioned above, then the third electrode may be embodied as a series of parallel extending electrode strips, whereby the dimensions of the intermediate openings are fulfilling the above mentioned dimensional requirements. Also in this case it is possible to control each of the laserdiode elements separately by connecting each of the electrode strips of the third electrode to a separate control voltage source. Uptil now embodiments of the invention are discussed in which within the structure according to the invention the functions of light emittor and the control element controlling said light emittor are combined into a compact integrated circuit. Within the structure according to the invention however also a light detecting function may be realized or said function is already present in the structure, namely as the semiconductor material adjoining the control electrode is totally or partly structured such, that this area is photoconductive. Such a light detection function within the semi- conductor structure according to the invention may be utilized directly to control the light emission. According to a preferred embodiment therefore the semiconductor structure adjoining the third electrode is totally or partly made photoconductive. With such a semi conductorstructure it is possible to amplify incoming light impulses into stronger outgoing light impulses. To further explain the invention in the following a number of embodiments of the invention will be described in details, whereby it is remarked that the invention is not restricted to said embodiments. Fig. 1shows a first embodiment of the invention. Fig. 2 shows a second embodiment of the invention. Fig. 3 shows a third embodiment of the invention. Fig. 4 shows a fourth embodiment of the invention. Fig. 1 shows a first embodiment of the invention. The active layer passes at the underside in a doped layer 2, to which the electrode 4 is attached. The layer 2, which is illustrated as a uniform layer in the figure, may eventually be further structurized. The active layer 1 passes at the upper side into a further oppositely doped layer 3, at the upper surface of which an electrode 5 is attached. Also said layer 3 may be further structurized, although this is not illustrated in the figure. The parts 1, 2, 3, 4 and 5 form a known light emitting semiconductor diode structure. An insulating barrier with at least one opening is positioned into the oppositely doped upper layer 3. Above said opening a third electrode 7 is positioned onto the surface of the layer 3, electrically separated from the semiconductor material of the layer 3, for instance by means of an insulating layer 8. When a current course is connected to the electrodes 4 and 5 such, that the diode structure is connected in the conducting direction, then an electron current can flow for instance from electrode 5 through the opening in the barrier 6 and through layers 3, 1 and 2 to the electrode 4. If said electron current is powerful enough then the recombination in the active layer 1, resulting into the transmission of electromagnetic radiation, will be stronger than the absorption of electromagnetic radiation in said layer, so that light will be emitted. If the front and the rear side of the structure as viewed in Fig. 1 have mirror surfaces, of which at least one surface is partly pervious for the generated light, then a laser function can be realized. According to the invention it is now possible to control the electron current through the diode structure by connecting the electrode 7 to a control voltage source. By connecting said electrode to a control voltage source a field is generated in the upper layer 3 as is indicated with the dotted line 9 in Fig. 1. If the voltage of the electrode 7 is high enough then said field can extend sufficiently to close the opening in the barrier completely, so that the electron current is cut off and no light will be emitted. At smaller values of the control voltage the electron current can be controlled such that the intensity of the emitted light varies dependent on the control voltage. The part of the active layer in which light will be generated is in the figure indicated as the shaded part la of said layer. Fig. 2 illustrates a second embodiment of the invention. Also in this embodiment the semiconductor laserdiode comprises in general the active layer 11 bounded at the under side by the doped layer 12 with the electrode 14 and bounded at the upper side by the oppositely doped layer 13 with the electrode 15. In this case the third electrode 17 is positioned onto the upper layer 13, such that an electon current can only flow between the electodes 14 and 15 through the opening in the electrode 17. At the outside of said metal electrode 17 a Schottky-barrier will be created in the semiconductor material of the layer 13. The width of said potential barrier varies with the electrode voltage, applied to said electrode 17. The opening in the electrode 17 has a width which is at the most equal to twice the maximum width of the potential barrier developed as a result of the Schottky-effect in the semiconductor material. Thereby it is possible to reach a situation in which the potential barrier around the left part of the electrode 17 meets the potential barrier around the right part of the electrode 17, such that the opening in said-electrode 17 is totally cut off for passing electrons. If, starting from this situation, the control voltage is varied, then the barrier width can be decreased so that a passage is formed in the central part of the opening through which an electron current can flow. Dependent on the control voltage of the electrode 17 said passage will be larger or smaller permitting larger or smaller currents through the structure. By means of said varying current it is possible to control the light intensity of the emitting part lla of the active layer. Fig. 3 illustrates a further embodiment of the semiconductor structure according to the invention, which is a further development of the basic configuration of Fig. 1. The diode structure in general comprises also in this case the active layer 21, bounded at the under side by the further or not structured doped layer 22 having the electrode 24 and at the upper side bounded by the further or not structured oppositely doped semiconductor layer 23 having the electrode 25. An insulating barrier 26 with a number of openings is positioned inside the upper layer 23. Abvove said openings third electrodes 27a, 27b and 27c are positioned separated from the semiconductor material of the layer 23 by means of the insulating layers 28a, 28b and 28c respectively. As will be clear in this way a number of potentially light emitting areas in the active layer are created, indicated as the areas 21a, 21b and 21c. As is indicated in Fig. 3 the electrode 25 comprises an elongated electrode segment 25a to which mutually parallel and preferably perpendicular to the electrode segment 25a extending electrode fingers 25b, 25c, 25d and 25e are connected. Between the fingers 25b, 25c, 25d and 25e the electrodes 27a, 27b and 27c are positioned. In this embodiment all the electrodes 27a, 27b, 27c could he connected to the same control voltage source such that the intensity of the light emitted from the areas 21a, 21b, 21c will vary in the same way, but it is also possible to connect the electrodes 27a, 27b, 27c to separate control voltage sources such that the light emitting areas 21a, 21b and 21c can be controlled independently. In a similar way it is possible to create a multiple configuration starting from the basic configuration illustrated in Fig. 2. Also without a detailed illustration it will be clear that in that case the third electrode 17 positioned into the upper layer 13 has a number of openings, each corresponding with a separate potentially light emitting area in the active layer 11. In the Figs. 1 and 3 an insulating layer 8, 28 is present between the layer 3, 23 and the third electrode 7, 27. However, it is also possible to attach the electrode 7, 27 onto the layer 3, 23 with a Schottky-junction, in which case the insulating layer 8, 28 is eliminated. The forming of a Schottky-zone underneath the electrode 7, 27 results into the creation of an area through which no current flows and dependent on the control voltage applied to the electrode 7, 27 the potential field from said Schottky-zone can completely close the opening in the barrier 6, 26 or can allow a carrier current of minor or larger value. When the electrode 7, 27 is embodied with a Schottky-junction there is no objection to embody also the electrode 5, 25 with a Schottky junction, which as will be clear, has technical advantages in the fabrication process. In all the discussed embodiments of the invention it is furthermore possible to realize very easily a light detector function or such a function is already present in a natural way, namely in the case that the semiconductor material adjoining the control electrode (7, 17, 27) is completely or partly structured such that said area is photoconductive. Furthermore such a light detection function within the semiconductor structure according to the invention may be utilized to control directly the light emission. If for instance in Fig. 2 light is inciding onto the semi- conductor area around the opening between the two parts of the electrode 17 and if said area is photoconductive, then the Schottky zône developed into said opening will be elimitated, because under the influence of the inciding light free carriers are generated and in that case the maximum current will flow through the structure so that the light emitting area lla is radiating light of great intensity. Such a structure may be used to transform an incoming weak light impulse inciding onto the opening in the electrode 17 into a strong light impulse, emitted by the light emitting section lla of the layer 11 in response to said incoming light impulse. Fig. 4 illustrates a configuration which is similar to the configuration of Fig. 1, however with the first difference that the electrode 47 of the layer 43 forms a Schottky-junction which possibility however is already discussed above. In this case it is possible without objection, as is already stated, to embody also the electrode 45 onto the layer 43 with a Schottky-junction. Furthermore the upper semicondunctor layer 43 is extended above the second electrode 45 and the third electrode 45 in the section 43a, whereby in this embodiment an interruption (50,50b) of said extended layer is created between said electrodes. Said interruption may be created into the structure in that locally material is used of which the absorption coefficfdnt for incoming light is smaller than the absorption co#ffici#nt of the surrounding semiconductor material. The further parts 41, 41a, 42, 44 and 46 are embodied similar to the corresponding parts 1, la, 2,4 and 6 in Fig. 1. If in this case light is inciding perpendicular to the plan of the drawing, then said light will partly be absorbed in the semiconductor structure around the control electrode 47. Thereby the indicated interruption (50a, 50b) of the semiconductor layer will function as light channel conducting the light over an extended area into the semiconductor layer around the control electrode. If said absorbing area is photoconductive, then the generation of a current inhibiting field around the control electrode will be prevented because free carriers will be generated as a result of the inciding light, so that the section 21a of the layer 41 will show a strong light emission. In said configuration also very weak incoming light impulses, which are not strong enough themselves to sufficiently break down the Schottky ?one by generation of free carriers, can be amplified. To that end the electrode 47 is connected to the control voltage source through a resistor having great resistance value. If there is no light inciding onto the electrode 47 then the Schottky zÏne is developed and there is no current flowing through the structure, so that there is also no light emission. When a weak light impulse is inciding onto the electrode 47 then in the Schottky zône a few free carriers will be generated resulting into a very small current flowing from the control voltage source through the above mentioned resistor. Said small current however results into changing of the voltage potential onto the electrode 47 such, that the current inhibiting zone is decreased so that a stronger current can flow through the structure and a stronger light impulse will be emitted. It is remarked that instead of a light sensitive Schottky junction also a light sensitive PN-junction may be utilized. In Fig. 1 it is for instance possible to insert a further doped semi- conductor layer underneath the electrode 5, forming a PN-junction with the layer 3. If said PN-junction and the electrode are sufficiently light transmitting, then said PN-junction, which is connected in the reverse direction, will be conducting when light is inciding, so that only if indeed light is inciding onto said PN-junction a current can flow through the structure resulting into light emission. Although in the above illustrated and discussed embodiments rectangular and parallel electrodes are indicated it will be clear that also embodiments with radially shaped electrodes or electrodes having a different configuration can be utilized. The semiconductor structure according to the invention, especially the embodiment illustrated in Fig.4, can be applicated with advantage in optical cables for transmission of information. To compensate the attenuation in such cables semiconductor structures according to the invention can be installed at regular distances in such an optical cable functioning as optical amplifier. Also the semiconductor structure according to the invention can be applicated with advantage for registrating and reading optical in formation onto respectively from a suitable information carrier.

Claims: C L A I N S. 1. Light emitting semiconductor structure consisting of a thin active layer, which layer at the underside passes to a further or not structured doped layer in direct contact with a first electrode, and which layer at the upperside passes into a further or not structured oppositely doped layer, in direct contact with a second electrode, which electrodes during operation of the structure are connected to a current source to generate a current of carriers through the light emitting semiconductor structure, characterized in that said upper layer comprises an inside barrier of which the permeability for carriers depends on the voltage applied to the third electrode which third electrode is positioned on the outside of said upper layer in the proximity of said second electrode. 2. Semiconductor structure according to claim 1, characterized in that the third electrode is positioned on the outside of the upper layer at some distance of the second electrode and the third electrode forms a Schottky-contact with said upper layer, whereby further more the barrier is embodied as an insulating layer inside said oppositely doped upper layer having an opening, whereby at least the edges of said barrier in the proximity of said opening are positioned close underneath that part of the surface of said upper layer where said third electrode is positioned such, that by means of the Schottky-z#ne generated underneath said third electrode in said upper layer when a control voltage is applied to said third electrode the carrier current between the first and the second electrode through the opening in said barrier is more or less cut off. 3. Semiconductor structure according to claim 1, characterized in that the third electrode is attached to the outside of the upper layer, electrically insulated from the semiconductor material of said layer and positioned at some distance of said second electrode, whereby said barrier is embodied as an insulating layer inside said oppositely doped upper layer, having an opening, whereby at least the edges of said barrier in the proximity of said opening are positioned close underneath that part of the surface of said upper layer where said third electrode is positioned such, that by means of a field generated by said third electrode when a control voltage is applied thereto the carrier current between the first and second electrodes through the opening in said barrier is more or less cut off. 4. Semiconductor structure according to claims 2 or 3, characterized in that the second electrode comprises an elongated electrode segment and elongated mutually parallel electrode fingers extending preferably approximately perpendicular to said elongated electrode segment, whereby the third electrode comprises a number of elongated electrode strips extending between the electrode fingers of said second electrode and said insulating barrier comprises a number of barrier segments positioned underneath the electrode fingers of said second electrode, whereby the intermediate openings between said barrier segments are positioned underneath the electrode strips of said third electrode. 5. Semiconductor structure according to claim 4, characterized in that each of the electrode strips of the third electrode can be connected to a separate control voltage source. 6. Semiconductor structure according to claim 1, characterized in that the third electrode is positioned inside said upper layer functioning also as barrier,which barrier has an opening of which the width is such that when a voltage lower than the avalanche voltage is applied the Schottky-barrier will extend so far around the third electrode that the opening into said electrode is completely closed. 7. Semiconductor structure according to claim 6 characterized in that the third electrode is embodied as a number of electrode strips, whereby the dimensions of the intermediate openings are fulfilling the above mentioned requirements. 8. Semiconductor structure according the claim 7, characterized in that, each of the electrode strips of the third electrode can be controlled independently by a separate control voltage source. 9. Semiconductor structure according to one of the preceding claims, characterized in that in said semiconductor structure a partly or completely photosensitive area is created adjoining the third electrode. 10. Semiconductor structure according to claim 9 having a Schottky-z#ne, characterized in that the Schotticy-zone is made photosensitive into the opening or openings of the third electrode, respectively underneath said third electrode. 11. Semiconductor structure according to claim 10, characterized in that the structure of the upper layer comprises a section extending above the second and third electrode, whereby the structure between said second and third electrode at least in the proximity of the third electrode has an absorption coëfficiënt for inciding light which is smaller than the absorption co#ffici#nt of the surrounding semiconductor material. 12. Semiconductor structure according to claim 11, characterized in that the structure between the second and third electrode at least adjoining the third electrode has openings functioning as light channel. 13. Optical cable comprising a semiconductor structure according to one of the preceding claims. 14. System for detecting optically readible registered information comprising a semiconductor structure according to one of the preceding claims 1-12. 15. System for registration of optical information onto a suitable registration medium comprising a semiconductor structure according to one of the preceding claims 1-12.

Inventors: BEAUJEAN, JOSEPH MARIE ELISE
Applicants: BOGEY B.V.
Application year: 1981
Main classification: H01L27
IPC codes: H01L27, H01L33