LITHOGRAPHIC PHOTORESIST COMPOSITION

Abstract: Phenolic-aldehyde resins sensitized with Meldrum's diazo or an analog thereof are useful as lithographic resists sensitive to deep ultra-violet light.

Description: A LITHOGRAPHIC RESIST COMPOSITION The present invention relates to a lithographic resist composition sensitive to light of less than 3000A wavelength in the deep ultra-violet region. The material known as Meldrum's diazo is well known in the art. Its synthesis is shown in CHEM. PER 94 929 (1961). The systematic chemical name for the material is 2,2-dimethyl-4,6diketo-5-diazo-1,3-dioxane and its formula is EMI1.1 The solution photochemistry of Meldrum's diazo has been previously studied. J. Org. Chem. 42 2931 (1977). U.S. Patents 3,046,110 to 3,046,124 inclusive all are concerned with light sensitive printing plates using certain specified diazide sensitizers. U.S. Patents 3,852,771, 3,961,100 and 4,065,306 are all concerned with use of certain diazide sensitizers in materials to be subjected to electron beams. A study of factors influencing dissolution of irradiated resist is reported in Polymer Engineering and Science, Vol. 18, No. 4, p. 306 (1978). According to the invention there is provided a lithographic resist composition comprising a phenolic-aldehyde resin and a sensitizer, characterised in that said sensitizer is a compound having the formula: EMI2.1 wherein R1 is C1 to C20 alkyl or aryl radical, R2 is H, C1 to C20 alkyl or aryl radical, or together R1 and R2 are cycloalkyl radical. The resists in the present invention possess several desirable properties representing advantages over the prior art. They are easily handled in ordinary light. This is in contrast to other resists which must be worked with in the absence of ordinary ambient light. Furthermore, the resists of the present invention are thermally stable and offer significant improvement of resolution because shorter wavelength light is being used. They possess no absorption of light in the conventional U.V. range (above 3000A) and hence require no optical filters in order to achieve higher resolution images. This offers a significant sensitivity improvement compared to conventional U.V. resists which are active in the o regions both above and below 3000A. They possess the additional advantage of yielding only volatile products upon decomposition. According to the present invention, Meldrum's diazo or a suitable analog is used in resists which comprise a resin of the phenolicaldehyde type. Many such resins are known in the art. In particular, mention may be made of phenol-formaldehyde resin and cresolformaldehyde resin. It is still an additional advantage of the present invention that the resists may be formed readily by dissolving the resin alld sensitizer in a common solution and casting a film onto an appropriate substrate. Upon image-wise irradiation with ultra-violet light, the sensitizer gives rise to gaseous volatile products in the irradiated regions. The solubility of the film in the exposed regions is thereby increased relative to the unexposed regions. Such photodecomposition can conveniently be brought about with a medium pressure mercury light source or any other source having appreciable intensity at or near 2600 A. The composition of the present invention may be varied depending upon the particular application desired. In general, the sensitizer is present in from about 5 to 50% of the weight of the resin. Casting solvents suitable for use in the present invention include, for example, such conventional solvents as diglyme, methyl isobutylketone and the like. Following imagewise exposure to ultra-violet light, development takes place in the conventional manner, that is, treatment with aqueous alkaline development, for example, potassium hydroxide solution. A resist formulation was made from 0.71 grams of Meldrum's diazo and 1.64 grams of Varcum resin (Varcum is a Trademark of Reichold Chem. Co. for its Cresol-formaldehyde resin). The mixture of these ingredients was dissolved in 3.72 grams of methyl isobutylketone. Films were cast on silicon wafers which were then prebaked at 800C to a thickness of approximately l.5p. The films were exposed through a quartz mask and developed with dilute aqueous potassium hydroxide. Extremely fine line resolution in the order of about 2# was obtained. Line resolution appears to be limited by factors other than the resist composition.

Claims: CLAIMS 1. A lithographic resist composition comprising a phenolicaldehyde resin and a sensitizer, characterised in that said sensitizer is a compound having the formula: EMI5.1 wherein R1 is C1 to C20 alkyl or aryl radical, R2 is H, C1 to C20 alkyl or aryl radical, or together R1 and R2 are cycloalkyl radical. 2. A composition as claimed in claim 1, in which the sensitizer is present in an amount of from 5 to 50% by weight of the resin. 3. A composition as claimed in claim 1, in which the resin is a cresol-formaldehyde resin.

Inventors: BALANSON, RICHARD DAVID, CLECAK, NICHOLAS JEFFRIES, GRANT, BARBARA DIANNE, OUANO, AUGUSTUS CENIZA
Applicants: INTERNATIONAL BUSINESS MACHINES CORPORATION
Application year: 1980
Main classification: G03F7
IPC codes: G03F7, G03C1