SEMICONDUCTOR MEMORY DEVICE

Abstract: A semicoductor memory device is disclosed having memory cells forming a high-density of semiconductor device, which comprises a semiconductor substrate of a first conductivity type, first and second semiconductor regions of a second conductivity provided in the semi­ conductor substrate, the first and second semiconductor regions defining a channel region therebetween at the surface of the substrate, an insulator film disposed on the channel region, a conductive layer formed on the insulator film, means for producing depletion layers from the first and second semiconductor regions in such a manner that the depletion layers contact with each other to isolate the channel region from the substrate, means for selectively feeding majority carriers of the substrate to the channel region at a density higher than that of the substrate, and a means for detecting the existence of the accumulation of the majority carriers in the channel region. Read digit lines and write digit lines of said memory device are connected, respectively, with said third semiconductor regions and said means for feeding majority carriers.

Description: Semiconductor memory device The present invention relates to memories, and more particularly to semiconductor memories that can be realized in the form of an integrated circuit. At present, the so-called one-transistor memory in which a memory cell consists of a single transfer-gate transistor and a single capacitor is widely utilized as a randon access memory (RAM) having the largest integration density on a semiconductor chip. In such a one transistor memory, a metaL- insulator- semiconductor (MIS) structure is employed to form the transfer-gate transistor and the capacitor. In this type of memory, whether an electric charge is stored in the capacitor or not is made to correspond to the information of either or or"1". In order to hold the state of either "O" or "1" a voltage corresponding to that state is periodically applied to the MIS capacitor to perform refresh operation, since the charges stored in the capacitor tend to be leaked out. The state of charge storage or non- storage in the capacitor can be changed and established in an extremely short time period. In such a prior art RAM, a signal read out on a bit line is detected as a potential charge ¯¯ EV on the bit line caused by the capacitive division of the charge stored in the MIS capacitor between the bit line capacitance and the MIS capacitor. Where the bit line capacitance has no charge, the change oV in voltage of the bit line is larger when a charge is stored in the MIS capacitor than when a charge is not stored, so that the states of "O" and "1" can be distinguished. However, the prior art RAM has a big disadvantage, based on the fact that the electric charge used for causing the potential change in the bit line is oily the charge which has been stored in the MIS ca#pacitor. If the capacitance of this MIS capacitor is too small as compÅared to the capacitance of the bit line, then the potential change tV appearing on the bit line upon read-out would be indetectably small. While, if it is intended to increase the capacitance of the MIS capacitor to increase the potential change #V, then it is necessary to enlarge the area of the MIS capacitor, to reduce the thickness of the gate insulating film, or to increase the capacitance per unit area by employing a material having a large dielectric constant as the gate insulating film. However, enlargement of the area of the MIS capacitor will result in wide lowering of the degree of circuit integration, and if the gate insulating film is made thin, the withstand voltage of the gate insulating film is lowered, resulting in damage of a large amount of MIS capacitors. Furthermore, if alumina or silicon nitride having a large dielectric constant is used for the insulating film, there occurs a problem in the stability of the electric performance of the MIS capacitor. As described above, the increase in the capacitance of the MIS capacitor is, in any event, accompanied by various disadvantages. Therefore, it is one object of the present invention to provide a memory in which reading of information can be achieved with high stability. Another object of the present invention is to provide an integrated memory circuit in which a high degree of circuit integration can be achieved. The memory according to the present invention comprises a semiconductor substrate of one conductivity type, first and second regions of the opposite conductivity type provided in the semiconductor substrate, a channel region between the first and second regions, an insulating film on the channel region, a control electrode provided on the channel region, means for producing a depletion layer extending from the first region towards the second region, means for producing a depletion layer extending from the second region towards the first region, and means coupled to the control electrode for inducing excessive majority carriers to a portion of the channel region at the surface of the channel region to make the density of majority carriers in that portion higher than that in the semiconductor substrate. The excessive majority carriers are retained, or stored, in the induced portion except which the depletion layer extends into the channel region, and existence or non-existence of the excessive majority carriers corresponds to the information stored in the memory cell. The existence or non- existence can be detected by the value of the current flowing between the first and second regions. More particularly, when the excessive majority carriers exist in the channel region, a punch-through current is suppressed, while when the excessive majority carriers do not exist, the punch-through current is generated between the first and second region. The first and second regions are coupled respectively to a word line and a digit line. The fabrication of the memory cell of the present invention can be realized by the well-known technique to form a usual insulated-gate field effect transistor (IGFET), wherein the first and second regions of the memory cell correspond to a source and a drain of IGFET and the control electrode to a gate electrode of IGFET. It is favorable for the purpose of retaining the excessive majority carriers to form one of the first and second regions in a ring- shaped pattern surrounding the other and the other in an island pattern disposed within the ring- shaped pattern. In this case the aforementioned control electrode takes a ring- shaped configuration covering the ring- shaped channel region between the two regions. According to the present invention, an advantage is attained that a capacitor to be used for storing a large amount of electric charges, such as the prior art MIS memory capacitor, is unnecessary, because storage of information is effected by either accumulating or depleting the majority carriers of the substrate in the channel region and on the other hand reading of the stored information is effected by the current flowing between the first and second regions which correspond to the source and the drain of the MIS transistor. In other words, the memory cells can be made small, so that it is possible to realize a high degree of circuit integration. Also a further advantage is attained that since the read current can be chosen large, even if the bit line capacitance is large, it is possible to make a sufficiently large potential change arise on the bit line, so that detection of the read signal becomes very easy. Therefore, the memory cell of this invention is suitable for a large-capacity memory. In the memory according to the present invention, by extending depletion layers from the first and second regions to the channel region, a pocket region defined by the depletion layers can be formed in the vicinity of the surface of the channel region. Information is stored by accumulating the majority carriers in this pocket region or depleting the majority carriers. Upon reading, assuming that the majority carriers are not accumulated in the pocket regions, when a voltage is applied to one of the first and second regions (a backward voltage), the depetion layer extending from this region applied with the voltage would further extend largely towards the other region until it reaches the other region, and thereby the so-called punch-through current flows. This punch-through current is caused by injection of minority carriers from the other region. On the contrary, if the majority carriers are accuzeulatefi in the pocket region, then the punchthrough current would not arise or would arise only a little. As described above, according to the present invention, the existence of the excessive majority carriers in the pocket region is detected in an punch-through mode, and therefore reading can be achieved at a high speed. According to the present invention, as a source of the mojirity carriers the substrate may be used. Instead, a region of one conductivity type may be formed within one of the first and second regions so that the majority carriers may be supplied therefrom. Other features and advantages of the present invention will become apparent from the following description of embodiments, taken in conjunction with the accompanying drawings, wherein: Fig. 1 is a cross-section view showing a memory cell according to one preferred embodiment of the present invention, Fig. 2 is a cross-sectional view showing a first modification of memory cell in Fig. 1, Fig. 3 is a cross- sectional view showing a second modification of the memory cell in Fig. 1, Fig. 4 is a schematic circuit diagram showing a memory circuit composed of the memory cells illustrated in Fig. 1, Figs. 5(A) to 5(F) are schematic cross- sectional views to be used for explaining the operation of the memory cell in Fig. 3, Now one preferred embodiment of the present invention will be described with reference to Fig. 1. The illustrated memory cell has the structure comprising a high-resistance P-type silicon substrate 102, a source 103 and a drain 104 each consisting of a square- shaped N-type layer, a P-type layer 105 formed within the source 103 and deviating towards the drain 104, a gate insulating film 106, a gate electrode 110, and metal electrodes 107, 108, and 109 and connected respectively to the source 103, drain 104, and P-type layer 105. In this example, for the P-type substrate 102 a silicon substrate having an impurltr concentration of 3 x 10.14/cm3 is employed, and for the gate insulati#ng film 106 a silicon oxide film of 1000 i in thickness is used. The drain region 103 and source region 104 are formed by selective diffusion or ion implantation of phosphorus, the depth of junction being 2.0 ,LL, and the impurity concentration is 1019/cm3. The distance between the drain region 103 and the source region 104, that is, the effective channel length is selected to be 3.0 ,u. The P-type layer ios has an impurity concentration of 1021/cm3 and a junction depth of 1 p. Under such conditions, a built-in potential Vbi at the PN-junctions formed between the drain region 103 and the substrate 102 and between the source region 104 and the substrate 102 is about 0.7 V. Accordingly the width W of depletion layers 111 and 112 produced by this built-in potential Vbi is equal to 1.7 ,LL, because the width W of the depletion layers 111 and 112 are represented as a function of the built-in potential Vbi in the following form: EMI8.1 where NB represents a concentration of a substrate, t a charge of the electron, and E 8 a dielectric constant of silicon. Owing to this internal potential, the depletion layers 111 and 112 can be brought into contact with each other, and a pocket region surrounded by the depletion layers 111 and 112 can be produced in the channel region 113. In order to use such a MOS transistor structure 101 as a memory cell, it is necessary to accumulate or deplete positive holes, which are the majority carrier in the substrate 102, in the channel region 113 surrounded by the depletion layer 111 extending from the source 103 and the depletion layer 112 extending from the drain 104. Now for the purpose of accumulating positive holes in the channel region 113, at first a negative potential is applied to the gate electrode 110 to establish the state where the positive holes forming the majority carriers can be captured in the channel region 113 and to raise the potential at the surface 114 of the source 103 located between the P-type impurity layer 105 and the depletion layer 111. When a positive potential is applied to the electrode 109 at the same time, positive holes are injected from the P-type impurity layer 105 into the channel region 113. On the other hand, for the purpose of depleting positive holes in the channel region 113, when the negative potential is applied to the gate electrode 110, a negative potential is applied to the electrode 109 to raise the potential of the source 103 and thereby make the positive holes flow out at the channel region 113 to the P-type region 105. Such states of the channel region 113 where positive holes are accumulated or depleted can be held for several seconds to several tens seconds due to the fact that the channel region 113 is electrically insulated from the interior of the substrate 102 because it is surrounded by the depletion layers 111 and 112. Accordingly, in order to sustain such states of the channel region 113, it is only necessary to carry our similar writing again, that is, to effect refresh within the holding time. Whether positive holes are accumulated or depleted in the channel region 113 can be detected by applying a positive voltage to the gate electrode 110 and a fairly large positive voltage to the drain 104. More particularly, since the MOS transistor structure 101 forming the memory cell according to the present invention has such impurity concentration of the substrate 102 and such distance between the source 103 and the drain 104 that the depletion layers 111 and 112 are contiguolls to each other under the condition where no voltage is applied to the substrate 102, source 103 and drain 104, when a certain positive voltage is applied to the drain 104 and the gate electrode 110, the depletion layer 112 extending from the drain side further extends largely until it reaches the source 103, and thus the so-called punchthrough current flows. This punch-through current is produced by injection of electrons from the source 103, and at a certain positive drain voltage, this electrom injection can be made to occur only at the surface portion 115 of the PN-junction between the source 103 and the substrate 102 by applying a positive voltage to the gate electrode 110. When the punch-through occurs only at the surface portion as described above, whether positive holes are accumulated or not in the channel region 113 largely affects the punch-through current flowing between the source 103 and the drain 104, and under the condition where positive holes are not excessively accumulated the punch-through current flows largely, whereas under the condition where positive holes are accumulated the punch-through current is small or the punch-through does not occur. Accordingly, if whether positive holes are accumulated or not in the channel region 113 is made to correspond to the information of "0" or "1", then the detection of the stored information can be effected by means of the source- drain current that is made to flow by the punch-through. The source-drain current can be chosen very large, so that it becomes possible to make the potential on the bit line largely change as compared to the method in which a charge stored in a capacitor is redistributed on a bit line and the potential change on the bit line is observed as is seen in the heretofore known one-transistor dynamic memories. Therefore, the above-described memory has a great advantage that even if the memory is enlarged to a large-capacity memory and thereby a bit line capacitance is increased, detection of the stored information is made sufficiently possible. Moreover, in the memory cell according to the present invention, since the accumulated carriers are not directly read out but the stored information is detected by the intermediary of the source-drain current modulated by the accumulated carriers, a large capacitor for accumulating the carriers is not necessitated, and therefore, the above-described memory has another advantage that the memory circuit is suitable for a high degree of circuit integration. In Fig. 2 is illustrated one preferable modification of the memory cell shown in Fig. 1. In this modification, a drain region 104' is formed in a ring shape or in a square frame shape, nearly at the center of the portion of a semiconductor substrate 102' surrounded by the ring- shaped or frame- shaped drain region 104' are formed an island-shaped source region 103' and a P-type impurity layer 105' within the source region 103', and on a ring- shaped or frame- shaped channel region between these drain region 104' and source region 103' is provided a ring- shaped or frame- shaped gate electrode 110'. Since a pocket region surrounded by depletion layers produced such shape of source region 103' and drain region 104' is completely enclosed by the depletion layers, the characteristics of holding the existence state of majority carriers of the pocket region can be improved In Fig. 3 is illustrated a second preferable modification of the memory cell shown in Fig. 1. In this modification, a source region 103" and a P-type impurity layer 105" are formed in an annular shape so as to surround an island- shaped drain region 104". In this modification, similarly to the first modification illustrated in Fig. 2, the existence state of majority carriers in the channel region can be better held. Furthermore, since the P-type impurity layer 105" is also formed in an annular shape, injection of majority carriers from the P-type impurity layer 105" to the channel region also can be achieved at a high speed. Now description will be made on a memory composed of the memory cells 101 illustrated in Fig. 1 (or Fig. 2 or 3) with reference to Fig. 4. In this figure, by way of example, a 2 x 2 matrix construction is illustrated. In Fig. 4, word lines W1 and W2 are connected to gates 110 (110', 110") of memory cells 101, read digit lines D1 and D2 are connected to drains 104 (104', 104") of the same, and write digit lines D1' and D2' are connected to impurity diffused layers 105 (105', 105") within sources 103 (103', 103"). Here, substrates 102 of all the cells are grounded in common. The source 103 (103', 103") is connected to an auxiliary digit line D 1 " Next, the operation of the matrix construction composed of the memory cells shown in Fig. 3 as illustrated in Fig. 4, will be described particularly in connection to one memory cell Mull, with reference to Fig. 5. Here it is assumed that the impurity concentrations of the respective regions and the substrate and the dimensions of the respective portions fulfil the same conditions as the first preferred embodiment shown in Fig. 1. At first, the operation upon writing a "0" in the memory cell will be described. At first the word line W1 is held at a negative potential of -3 V, and the write digit line D11 is brought to +3 V. While the drain 104" is held at the ground level. Under such condition, positive holes 120 as the majority carriers are injected from the P-type impurity layer 105" to the channel region as shown in Fig. 5(A). In this way, the positive holes 120 are accumulated in the channel region at an excessive degree, and thereby writing of the information "0" is effected. After writing of this information "0", the word line W1, the read digit line D1 and the write digit line D1' are held at the ground potential, so that the positive holes 120 are retained in the channel region as shown in Fig. 5(B). Subsequently, when the information "0 " stored in this memory cell M11 is to be read out, the word line W1 is changed in potential to +1 V, and the read digit line D1 is changed in potential to +3 V. At this moment, the write digit line D1, is held grounded. Then, as shown in Fig. 5(C), in this case, the positive holes are excessively present in the channel region, the punch-through current is not provided. Next, write-read operations of the information "1" will be described. Then the word line W1 is brought to a positive potential of about -3 V, while the write digit line D1' is brought to -3 V. At this moment, as shown in Fig. 5(D), the positive holes 120 in the channel region are swept out through the P-type impurity regin 105", so that the channel region takes a depletion state of majority carriers and thereby storage of the information "1" is effected. During this write period, in the other memory cells M12 M21 and MZZ, the information stored previously therein can be preserved because either the write digit line D21 is held at the ground level or the word line W2 is held at the ground potential. Subsequently, when the write operation has finished, the applied potential condition is held the same as that in Fig. 5(B), and hence, the information represented by the depletion of the majority carriers is retained as shown in Fig. 5(E). Next, when it is intended to read the information "1" stored in this memory cells11, the read operation is conducted by establishing the same potential condition as that shown in Fig. 5(C), that is, by holding the word line W1 at the +1 V level and the read digit line D1 at +3 V level. In this case the depletion layer 112" extending from the drain region 104" reaches the source region 103", so that electrons 121 are injected from the source region 103" into the depletion layer 112" and thereby a punch-through current is produced between the source and the drain. Detection of the information "1" stored in this memory cell Mll can be effected by sensing this punch-through current which flows through the read digit line D1. Inthe other memory cells M12, M21 and M22, the previously written information can be preserved, because the read digit line D2 is held at the ground potential or the word line W2 is held at the ground potential. In addition, re-write (refresh) of the information in the memory cell M11 is effected only by detecting the read current through the read digit line D1 and writing the signal corresponding to the read current in the same memory cell M1 1 While the present invention has been described above in connection to its preferred embodiments, it is a matter of course that the invention should not be limited only to the illustrated embodiments but it can be realized in various forms under various conditions of an impurity concentration and under various voltage conditions. In addition, while the channel region is isolated from the substrate by the depletion layers produced by the built-in potential in the above-described embodiments, the channel region may be isolated by producing depletion layers by an external electric field.

Claims: Claims 1. A semiconductor memory device comprising a plurality of word lines (W1, W2), a plurality of read digit lines (D1, D2), a plurality of write digit lines (D1,1 D2'), a plurality of memory cells (101) including a first semiconductor region (102) of a first conductivity type, a second (103) and a third (104) semiconductor regions of a second conductivity type provided in said first semiconductor region, said second and third semiconductor regions defining a channel region therebetween, said second semiconductor region (104) being connected to one of said read digit lines (D11 D2), first and second depletion layers (111, 112) extending from said second and third semiconductor regions respectively, said first and second depletion layers being contacted with each other thereby to isolate said channel region from said first region in vertical direction of said first semiconductor region, an insulator film (106) disposed on said channel region, and a control electrode (110) disposed on said insulator film, said control electrode being connected with one of said word lines, and means for supplying selected one of read digit lines with a potential which causes an electric current having an amount corresponded to state of the accumulation of the majority carriers in the channel region , c h a r a c t e r i z e by further comprising a fourth semiconductor region of said first conductivity type provided in said third semiconductor region and connected to the associated write digit line and means for biasing said fourth semiconductor region so as to inject the majority carriers to the channel region. 2. The device according to claim 1 , c h a r a c t e r i z e d in that one of said second and third semiconductor regions is formed in a ring-shape pattern and the other of said second and third semiconductor regions is formed in an island pattern surrounded by said ring-shape pattern. 3. A semiconductor memory device comprising a semiconductor substrate (102) of a first conductivity type, first and second semiconductor regions (103, 104) of a second conductivity type provided in said semiconductor substrate, a channel region (113) positioned between said first and second semiconductor regions at the surface of said semiconductor substrate, an insulator film (106) disposed on said channel region, a control electrode (110) disposed on said insulator film, means for generating depletion layers (111, 112) from said first and second semiconductor regions in such a manner that said depletion layers contact with each other to isolate at least a portion of said channel region from said substrate in vertical direction of said semiconductor substrate, means (105) for operatively accumulating majority carriers to said channel region at a density higher than that of said semiconductor substrate, and means for detecting the existence of the accumulation of said majority carriers in said channel region c h a r a c t e r i z e d in that said accumulating means includes a third semiconductor region of said first conductivity type formed in one of said first and second semiconductor regions. 4. The device according to claim 3, c h a r a c t e r i z e d in that one of said first and second semiconductor regions is formed in a ring-shape pattern and the other of said first and second semiconductor regions is formed in an island pattern surrounded by said ring-shape pattern.

Inventors: HAMANO, KUNIYUKI, OHTA, TOSHIYUKI
Applicants: NEC CORPORATION
Application year: 1980
Main classification: G11C11
IPC codes: H01L27, H01L29, H01L21, G11C11