SOLID STATE IMAGING APPARATUS

Abstract: A solid state imaging apparatus includes a plurality of celles formed on a semiconductor substrate and produces a video signal representing an optical image of an object. Each cell comprises a photosensitive first diode, a second diode connected to the first diode and a switching element connected to the connection point of the first and second diodes for reading out charge signals from the first diode under the control of a read pulse. To one of the first and second diodes a blooming supression pulse is supplied in synchronism with the read pulse so as to enlarge the dynamic range of the imaging apparatus.

Description: SOLID STATE IMAGING APPARATUS This invention relates to a solid state imaging apparatus which stores charges in proportion to intensity of incident light and produces a sequential video signal. As is well known, it is preferable to use a solid state area imaging device for a television camera in place of a pick up tube for converting an optical image of an object to an electrical video signal, in cases where compact size, long life, stability and lower power consumption, are required. However, there remain problems in utilizing such a device as a practical imaging apparatus. One of the typical problems is a phenomenon known as blooming. Blooming is especially objectionable in imaging devices with high sensitivity, since even a normal light source causes overload at high light portions in a low-light-level environment. Blooming is caused by excess charges generated in a photosensor such as a photodiode. To make such solid state imainff apparatus capable of operating without blooming in the nresence of excessive high light portions, several methods of selppressing blooming have been proposed. One of the practical methods employs OFD (Over Flow Drain) within the image sensor to absorb excess charges, as shown in Bell Syst. Tech. Journal, Viol. 51 PP. 1923-1926, 1972. But this method has several problems. The first problem is the limitation of blooming suppression due to the limitation of OFD's space in the imaging area. The reason thereof is that quantity of excess charge absorption is mainly proportional to area of OFD. The second problem is the decrement of the sensitivity of the imaging apparatus, because of the decrement of the effective area of photosensor due to the existence of OFD. Another practical method for suppressing blooming is providing an n-p-n structure in the imaging area so as to absorb excess charges into the n-type substrate forming part of the n-p-n structure, such as shown in ISSCC (International Solid-State Circuits Conference) Dig. of Tech. Papers, pp. 192-193, Feb.1972. This technique has problems, for example the effect of blooming suppression is not so high because of the spreading of generated excess charges through the n-type substrate of the n-p-n structure into adjacent regions. According to the present invention, a solid state imaging apparatus includes an electrode capacitivelly coupled to a node at which a photosensitive element and a switching element are connected in series, and a bias voltage including a blooming suppression pulse is supplied to the electrode. The blooming suppression pulse is in synchronism with a read pulse which is supplied to the switching element to read an accumulated charge signals from the photosensitive element and functions so as to expand a voltage supplied to the photosensitive element. According to an embodiment of the invention there is orovided a plurality of pairs of a first diode and a switching transistor formed in matrix, a plurality of second diodes respectively coupled to the first diodes, one of which first diode and second diode is a photodiode, and a bias voltage including a blooming suppression pulse is supplied to each one of the first and second diodes. Each connection noint of the first and second diodes is clamped at the bias voltage when an accumulated charge signal is about to exceed a predetermined amount due to a large intensity light. Preferably, the apparatus utilizes a photodiode array, an MOS transistor array, a charge transfer device such as a CCD (Charge Coupled Device) and a BBD (Bucket Brigade Device) or a combination thereof. An advantage of the present invention is that blooming is satisfactorily suppressed without decreasing the sensitivity of the apparatus. Further, it is possible to read video signals from its imaging area with low power consumption and lfith large dynamic range. In order that the present invention be more readily understood embodiments thereof will now be described by way of example with reference to the accompanying drawings, in which: Figure 1 is a sectional view of a solid state imaging apparatus according to the present invention; Figure 2 is a schematic diagram illustrating an equivalent circuit of the apparatus shown in Figure 1; Figures ;A, 3U, 3C and 3D are diagrams showing wave forms for describing the operation of the embodiment of Figure 1; Figure 4 is a graph illustrating an effect of suppressin3 blooming according to the embodiment of Figure 1; ; Figures 5A and 5B are a sectional view showing another embodiment of the invention and an equivalent circuit diagram thereof, respectively; Figures 6A and 6B are a sectional view showing a further embodiment of the invention and an equivalent circuit diagram thereof, respectively; and Figure 7 is a diagram showing a wave form for describing the operation of a further embodiment of the invention. Figure 1 and Figure 2 show one cell forming part of the imaging area of one embodiment of a solid state imaging apparatus according to this invention. The cell includes a p-n heterojunction photoconductor DN, a diode Ds, a read-gate FET TR and a BBD gate FET TB The diode D5 is constructed by forming an type diffused region 1 in a p-type substrate 2, which diffused region 1 also constitutes a drain region + of the read-gate FETTrue A p region 3 operates as a potential barrier for preventing an injection of + from the + electronstfrom the n region 1 to an n region 4 which constitutes a source region of the read-gate FET TR. + The p region 3 is provided only in the case where vertical scanning shift registers for transferring signal charges from imaging cells to an out put horizontal register consist of CCDs. In case that the veritical scanning shift registers are constituted by BBDs, the n type region 4 is constructed in the substrate as shown in the said figure. Since the transfer function of CCDs and the BBDs is substantially same, the operation of the embodiment of this invention is described as follows in case of utilizing BBDs. A first gate electrode 5 has a overlapping area with the n type region 4. A gate oxide layer 6 insulates the first gate electrode 5 from the substrate 2. A insu lator 7 is formed on the first gate el1'e#ctrod'e 5 and insulates a first matal electrode 8 from the first gate electrode 5 and the substrate 2. The electrode 8 is in contact with n type region 1, and is utilized as cathode electrodes of diode D5 and the p-n heterojunction photo conductor DN constructed with, for example, ZnSe 9 and Znl Cd Te 10. A transparent electrode 11 is deposited on the photoconductor DN. A symbol T represents the direc tion of the signal charge transfer through the vertical scanning shift register. Fig.2 is an equivalent circuit of the cell shown in Fig.1. A numeral 12 represents terminal for supplying a read pulse ¯R and transfer pulse ¯T such as shown in Fig.3A to the first gate electrode 5 of the transistors TR and TB. A symbol CB represents a capacitance of a bucket for counstructing BBD and Cj a junction capacitance. The cathode electrode of the photoconductor DN and the diode DS are connected with each other at a node M. Symbols CN and C represent equivalent capacitance of the S. photoconductor DN and the diode Ds, respectively. A numeral 13 is an input terminal which corresponds to the transparent electrode 11 in Fig.1, and to which a bias voltage ¯B such as shown in Fig. 3B is supplied. In this embodiment, the bias voltage ¯B includes a blooming suppression pulse #BS which is in synchronism with the read pulse 0 supplied to the input terminal 12. The operation of the above mentioned embodiment is described hereinafter. Fig.3A is a diagram showing the wave, rorm of a clock pulse ¯ composed of the read pulse ¯R for reading signal charges from picture elernents, i.e. photoconductors DN, and the transfer pulse ¯T for transfering the signal charges. The voltages of the read pulse ¯R and the transfer pulse ¯T are VCH and V¯, respectively. Fig.3B is a diagram showing the wave form of the bias voltage ¯B which includes the blooming suppression pulse ¯BS The bias level of the bias voltage ¯B is Vc with the positive pola- rity and the voltage of the blooming suppression pulse #BS is VL with the negative polarity. With the application of the clock pulse ¯ and the bias voltage ¯B to the terminals 12 and 13, respectively, the potential of the node M in Fig.2 changes such as shown by wave form of Fig.3C. The operation of the apparatus of this embodiment is described in detail at respective periods T1-T4 of Fig.3C as follows. ( i ) Period T1 When the voltage of the terminal 13 changes from VC to VL in response to the blooming suppression pulse #BS at the beginning of the period T1, the potential of the node M changes to V1 such as determined by the formula S . CS = ( V1 - VL ) CN + V1 ¯ CS where V represents the voltage of the node M at the end of the preceeding period To Therefore, v1 is expressed by EMI7.1 Assuming the node M has been clamped at the voltage level VC due to large intensity light in the pre-, ceeding period To, such as shown in Fig.3C, V is equal to Vc Then v1 becomes V1 such as expressed by EMI7.2 ( ii ) Period T2 At the beginning of the period T2, the read pulse is is supplied to the terminal 12. The voltage VCH of the read pulse ¯R is divided by capacitances CB and Cj, and the divided voltage is applied to the node A of the transfer stage T. At this instant, the potential of the node A changes from VR to Vh, such as expressed as follows. EMI7.3 where VR is the preceeding potential of the node A, which is set up by transfer pulse ¯T and expressed as VR= V¯ - VTB, VTB : the threshold voltage of the FET TB With the read pulse ¯R- the gate FET TR is on, and charges the amount of which is in proportion to the intensity of the light are transfered into the node M from the node A, in other words signal charges are read cut through the FET TR into the capacitor CB. As a result the potential of node M rises to the cut-off voltage of-the FET TR The cutoff voltage V2 is expressed as V2 = Vh - VTC -K SB ( 4 ) where VTC is the threshold voltage of the read gate FET TR' and K SB is a increased component of the threshold voltage by a substrate bias effect. From the expressions ( 3 ) and'( 4 )lV2 is given as follows EMI8.1 This voltage V2 is, therefore, constant. In this state, charges QM stored in the capacitors and C is expressed by : . QM = ( V2 - VL ). CN + V2 . CS ( iii ) Period VT2T3 At the beginning of the period T3, the potential of the terminal 13 changes from VL to Vc, and so the potential of the node M rises from V2 to V3 because of the capacitive coupling by the junction capacitance CN. The voltage V3 is defined by the following equation QM = (V3 -VC )'CN + V3 . VS Vs( 7 ) Therefore, from the equations ( 6 ) and ( 7 ) , the potential V3 is given by EMI8.2 If, in a practical embodiment, the capacitances and the voltages are selected, such as C B = 0.1 pF, CJ = 0.03 pF, CN = 0.06 pF, C5 = 0.03 pF, V C = 7 V, VL = -5 V, = = 8 V, VTB = 1 V' VCH = 14 V, VTC = 3 V, VSB = 6V, V1, V2 and V3 are given as follows V1 = - 1.0 V V2 = 8.7 V V3 = 16.7 V ( iv ) Period T4 I In this period, the signal charges read out into the capacitor C B during the read pulse period and temporarily stored therein are transfered out through the vertical scanning shift register, in the direction T in Fig.1 under the control of the transfer clock pulse ¯T- On the other hand, the potentialtf the node M diminishes in proportion to the intensity of the incident light upon the photoconductor DN. Even if the intensity of the incident light is excessively large, such as in this case, the potential of the node M does not decrease to below VC, because the node M is clamped at the bias level VC by the heterojunction photoconductor DN, when the potential thereof is about to exceed the potential Vc. As a result the excess charge is removed through the electrode 11 and the terminal 13, so that the excess signal charges are not diffused into the substrate, and therefore the blooming phenomenon is remarkably suppressed. The voltage VS is selected to a certain level which C is higher than the voltage of the tranfer pulse PIT SO that the signal charges are not read out by the transfer pulse ¯T through the read gate FET TR If the voltage V C is high, the effect of blooming supression becomes large but the dynamic range of the imaging apparatus becomes small. Therefore the amplitude of the voltage VC should be selected preferably in consideration of it. The dynamic range of the imaging apparatus is decided by the voltage difference Av, i.e. the saturation signal voltage, such as given by : I AV = V3 - VC ¯¯¯¯¯¯ ( 9 ) The signal charges representing the total amount of the incident light during one charge accumulation period, that is almost one field or frame period of the conventional solid state imaging apparatus, are read out by the read pulse XR through the read gate FET TR into the vertical transfer channel. According to this embodiment, in the period T3, the voltage EMI10.1 is added to the potential of ofthe node M. Therefore the dynamic range is enlarged with such increment in the potential of the node M. It means that the range operable without blooming is enlarged. In the case when the values of the capacitances and the voltages are given such as mentioned above, the saturation signal voltage JV is given from the formula ( 9) ) as V V3 - V C = 16.7 - 7.0 V = 9.7 V -" ( 10 ) On the other hand, when the blooming suppression pulse ¯BS is not supplied to the electrode 11 as illustrated in Fig.3D, the saturation signal voltage bV' is given as V' C V2 - V C ( 11 ) = 2.7 V It is obvious from the expressions ( 10 ) and ( 11 ¯) , that according to this embodiment the dynamic range is enlarged by V3 - V2, that is 7 volts, with respect to the latter apparatus. The experimental data representing blooming suppression characteristcs ofsthe embodiment described above are shown in Fig.4. In the same figure, the abscissa axis represents the intensity of the incident light which is expressed as a multiple of a saturation exposure, and the ordinate axis represents the ratio of the blooming signal to the saturation signal in a percent expression. In this case, the amount of the blooming a. a signal is defined as the amount of quasi-output signal which is generated in the direction of the vertical transfer in the imaging apparatus when the signal charges are read out from the black back ground surrounding the white spot which is located at the center of the imaging area. The amount of the saturation signal is defined as the amount of the output signal read out from the white spot. In the same figure, the dotted curve represents a characteristic of the conventional case where the blooming suppression pulse is not supplied, and the real curved line represents a characteristic of the embodiment of this invention. As is evident from the Fig.4, if the limit of the allowable blooming signal rates is 5 % , the apparatus of this embodiment has the effect of blooming suppression against the light having the intensity more than a hundred times as large as that of the saturation exposure. On the other hand, the conventional apparatus has the effect against the light having the intensity less than the intensity which is twice as large as that of the saturation exposure. Figs.SA and 5B show a cell structure of an another embodiment of the invention and the eWivale,nt circuit thereof, respectively. The difference of this embodiment with respect to the previous embodiment of Figs.1 and 2 exists in a construction of a photosensitive element DN' and a diode Ds'. In this embodiment, the diode D51 and the photodiode DN' are utilized in place of the heterojunction photoconductor DN and the diode D5 shown in Fig.2, respectively. In Fig.SA, 21 is an n+ diffused region formed in the substrate 2 of p type semiconductor. The photodiode DN is constructed by the n+ region 21 and the substrate 2. A p+ diffused region 22 is provided in the n+ region 21, so as to construct the diode D51 in combination with the diffused region 21. The p+ region 22 is connected electrically to an electrode 23. In the equivalent circuit of Fig.5B, C5, is the junction capacitance of the diode D5, and CN is that of the diode DN'. In Figs.SA and 5B, the constructions of the portions represented by the same symbols as those in Figs.1 and 2 are the same as those in Figs.1 and 2. In the solid state imaging apparatus of this embodiment, the bias voltage ¯B including blooming suppression pulse #BS shown in Fig.3B is supplied to the terminal of the electrode 23. With respect to blooming suppression the function of this embodiment is similar to that of the preceeding embodiment of Figs.1 and 2. It is well understood from F.igs.3A, 3B, 3C and 3D, and the description thereof. Although the heterojunction photoconductor DN or the diode D51 is utilized as the element through which the bias voltage is supplied in the above mentioned embodiments, it is not essential fpr the invention. It is alsoepossiblle to utilize a capacitor in place of such element. Figs.6A and 6B illustrate a further embodiment employing such construction. Fig.6A shows a cell structure .of this embodiment, and Fig.6B the equivalent circuit thereof. In these figures, the elements with the same symbols as in Figs.lA and 1B have the same cönstruction as those in Figs.lA and 1B. A numeral 31 in Fig.6A is an n+ diffused region such as the region 1 in Fig.1. An electrode 32 is formed on the insulating layer 7 so that it has an overlapping portion in part with the n+ diffused region 31. The n+ region 31, the oxide layer 6, the insuiating layer 7, and the electrode 32 constitute a capacitor C. A wave form of a blooming suppression pulse which is supplied to the electrode 32 is almost similar to that of the bias voltage #BS except it does not includes DC level. Therefore, the operation of this embodiment is almost the same as those of the preceeding embodiments except that the node M is not clamped at a certain voltage level in the accumulation period TA. . Only the dynamic range of the imaging apparatus is enlarged in this case. That is to say, the potential of the node M rised EMI14.1 in this apparatus when the blooming suppression pulse is supplied to the electrode 32. The increment of the node potential corresponds to that in the embodiment of Figs.1 and 2, that is EMI14.2 Therefore, the allowabole range of the amount of the incident light, in which the apparatus is operable without-blooming iis enlarged. Fig.7 represents a clock pulse ¯O of a further embodiment in which lower power consumption is obtained. The construction thereof may be the same as that of Fig.1 and a bias voltage is also the same as Fig.3B. The feature of this embodiment exist in the clock pulse ¯O in which the amplitude of the read pulse ¯RO is smaller than that of the embodiment of Fig.1 so as to be almost equal to the amplitude of the transfer pulse ¯TO This feature, makes it possible to realize the imaging apparatus with lower power consumption. In spite that the read pulse ¯RO has such a small amplitude, the enough dynamic range of the apparatus is obtained by selecting the amplitude of the blooming suppression pulse ¯BS preferably. Although this invention is described in reference to the apparatus employingthe inter-line transfer method, it is not essential for the invention. It is possible to apply this invention to apparatuses employing other method such as the frame transfer method, and also to a linear imaging apparatus. It is obvious that this invention is also applicable to the imaging apparatus which operates in an interlace mode, though the above-disclosure refers only to noninterlace imaging apparatus for the simplisity.

Claims: CLAIMS - 1. A solid state imaging apparatus having a substrate and a plurality of cells formed on the substrate, which accumlate charge signals in response to an intensity of an incident light from an object and producing a video signal representing an optical image of the object, by reading the charge signals from said cells, in which each of said cell comprises a photosensitive element a switching element which is substantially connected to said photosensitive element and reads out the charge signals therefrom under the control of a read pulse; and a coupling element for capacitivelry coupling the connection point of said photosensitive element and the switching element to an electrode to which a blooming suppression pulse is supplied, the blooming supression pulse being in synchronism with said read pulse. 2. A solid state imaging apparatus as claimed in claim 1, wherein said photosensitive element comprises a v#'t heterojunction photoconductor which also constructsi said coupling element. 3. A solid state imaging apparatus as claimed in claim 1, wherein said coupling element comprises a capacitor coupling the connection point to said electrode. 4. A solid state imaging apparatus as claimed in claim 1, 2 or 3, wherein said switching element comprises a FET. 5. A solid state imaging apparatus having a substrate and plurality of cells formed on the substrate, which accumulate charge signals in response to an intensity of an incident light from an object and producing a video signal representing an optical image of the object by reading the charge signals from said cells, in which each of said cell comprises a first diode which has a junction capacitance and accumulates the charge signals therein a switching element which is substantially connected to said first diode and reads out the charge signals therefrom under the control of a read pulse applied to a control electrode thereof a second diode which has a junction capacitance therein and is connected to the connection point of said first diode and said switching element a first means supplying said read pulse to the control electrode#of sai4,vswitching element,; and a second means supplying a bias voltage which includes a blooming suppression pulse to one of said first and second diodes, the blooming suppression pulse being in synchronism with the read pulse. 6. A solid state imaging apparatus as claimed in claim 5, wherein said first diode comprises a heterojunction photoconductor. 7. A solid state imaging apparatus as claimed in claim 5 or 6, wherein said bias voltage has a predetermined voltage level except in the interval of said blooming suppression pulse, and the connection point of said first and second diodes is clamped at a voltage level decided by the predetermined voltage level when the intensity of the incident light exceeds a predetermined amount. 8. A solid state imaging apparatus as claimed in claim 5, wherein said cell further comprises a temporary storage region for temporary storing said charge signals read out through said switching element from said first diode ; and a transfer element having an electrode for transfering out the charge signals from said temporary storage region for producing the video signal under the control of a transfer pulse provided to the electrode. which is coupled to the control electrode of said switching element. 9. A solid state imaging apparatus as claimed in claim 8, wherein the amplitude of said read pulse is larger than that of said transfer pulse. 10. - A solid state imaging apparatus as claimed in claim 8, wherein the amplitude of said read pulse is equal to that of said transfer pulse. 11. A solid state imaging apparatus as claimed in claim 8, 9 or 10, wherein the level of the bias voltage is larger than that of said transfer pulse and the connection point of said first diode and said switching element is clamped at a predetermined voltage level decided by said bias voltage when the intensity of the incident light is about to exceed a predetermined amount. 12. A solid state imaging apparatus for producing a video signal representing an optical image of an object, said apparatus comprising a semiconductor substrate ; a plurality of a diffused regions which are formed in said substrate and have an opposite conductivity characteristic with respect to that of said substrate so as to form a first diode a plurality of other regions which are formed in or upon said diffused regions so as to form a second diode'; an insulating layer formed on said substrate a gate electrode means which is formed on said insulating layer and reads out charge ,signalalwhich is accumulated in one of said first and second diodes and ;the amount of which is in proportion to the amount of the incident light, under the control of a read pulse supplied thereto ; and -a electrode means electrically coupled to said other regions, to which means a bias voltage including a blooming suppression pulse which is in synchronism with the read pulse. 13. A solid state imaging apparatus as claimed in claim 12, wherein said other regions comprise heterojunc tion Dhotoconductors formed upon said diffused regions for accumulating the charge signals. 14. A solid state imaging apparatus as claimed in claim 12, wherein said other regions comprise second diffused regions each of which is formed in said diffused regions and has an opposite conductivity characteristic with respect to that of said diffused regions to form the second diode. 15. A solid state imaging apparatus as claimed in claim 12, 13 or 14, wherein the potential of said diffused regions is clamped at a predetermined level decided by the level of said bias voltage when the amount of the incident light is about to exceed a predetermined amount. 16. A solid state imaging apparatus as claimed in claim' 12, further comprising a plurality qf temporary storage regions in the substrate for temporary storing said charge signals which are read out from said diffused regions undewrlthe control of the read pulse,' and a transfer means which. includes said gate electrode means and transfers said charge signals from said storage regions under the control of a transfer pulse supplied to said gate electrode. 17. A solid state imaging apparatus as claimed in claim 16, wherein the amplitude of said read' pulse is larger than that of said transfer pulse. 18. A solid state imaging apparatus as claimed in claim 16, wherein the amplitude of said read pulse is equal to that of said transfer pulse. 19. A solid state imaging apparatus as claimed in claim 16,17 or 18, wherein the level of the bias voltage is larger than that of said transfer pulse and the potential of said diffused regions is clamped at a predetermined level decided by the level of said bias voltage when the amount of the incident light is about to exceed a predetermined amount.

Inventors: OHTA, YOHIO
Applicants: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
Application year: 1980
Main classification: H01L27
IPC codes: H01L27, H04N3