INSULATED-GATE FIELD-EFFECT TRANSISTOR

Abstract: A semiconductor device having a source region (12), a drain region (13) and a channel region which are formed in a surface portion of a semiconductor substrate (11), and a gate (14) formed with a material having a relatively high built-in voltage relative to the source region. This semiconductor device may further include, in the semiconductor substrate to extend along the channel region, a highly-doped region (33) having a conductivity type opposite to that of the source region. This highly-closed region may have an impurity con­ centration gradient which is greater toward its portion facing the abovesaid surface of the substrate. This construction serves to prevent the loss of the memory due to current leakage during absence of a bias voltage which otherwise would develop in semiconductor devices having a short-­ channel and a thin gate oxide layer (15), and due to irradiation of alpha-particle onto the device.

Description: "Semiconductor device". The present invention relates to a semiconductor device, and more particularly to a semiconductor device such as an insulation-gate transistor which allows a high packing density integration and effects a good holding of memory contents and which does not make soft errors induced by alpha-particle irradiation. The invention further relates to a semiconductor device serving as a semiconductor memory and a logic circuitry. A major development is in progress in the field of high packing density integration of semiconductor memories, especially in the field of dynamic random access memories (hereinafter to be referred to as d-RAM) which refreshes its memory contents at certain time intervals. Recently, there have been placed on the market 64 kilo-bit d-RAMs, and the development of 256 kilo-bit d-RAMs is in progress. High packing density integration of a d-RMf, whose circuit arrangement has now nearly reached perfection so that it cannot be simplified any further than the "one transistor-one capacitor" type, is attained only by making the sizes of the respective structural components extremely fine. Such a trend of development has given rise to the tendency for progressively shortening the distance between the source region and the drain region (hereinafter to be referred to as the channel length) in insulation-gate transistors (hereinafter to be referred to as MOS transistors). However, in the case where the channel length of such a transistor is reduced, there arises the inconvenience that, even when the gate potential of the transistor is zero-biased in order to render the transistor non-conductive, a leakage current flows between the source region and the drain region so that the memory contents will become extinguished in a very short period of time, and the device will not operate satisfactorily as a memory. In the currently practised process of making LSI using silicon, it is often the case to arrange a MOS field effect transistor (hereinafter to be referred to as MOS-FET) which is a component of the LSI, in such a way as shown in Figure 1 of the accompanying drawings. In order to materiatize a high-speed operation, this MOS-FET is formed as an n-channel structure. In Figure 1 which shows a prior art construction, a p type region 11 represents a substrate. Also, two main electrodes are provided in a + symmetrical pattern, so that an n type region 12 represents, for example, a source region, and an n type region 13 represents, for example, a drain region. A gate region 14 serves as a controlling electrode which is comprised of + an n type polysilicon, and which is formed by relying on a known process of manufacture. It should be understood + that this n type polysilicon gate region may be substituted by a metal gate region such as aluminium, molybdenum and tungsten. The MOS-FET further includes a gate oxide film 15, a field oxide film 16, and a PSG film 17. A source electrode 12a and a drain electrode 13a are both made of a metal such as ,aluminium. A p type region 18 serves as a channel-stopper region for inhibiting the tendency of the formation of a current channel between the field oxide film 16 and the p type substrate 11. It should be understood here that the gate oxide film 15 and like films can locally contain a Si N film. Also, it is usual to provide a passivation film Ila on the surface of the device shown in Figure 1. By using the MOS-FET having basically the arrangement as shown in Figure 1, a d-RAM cell can be formed by either of the two following types of of arrangements. Instead of providing an electrode directly on one of the two main electrode regions, for example, on the drain region 13 of this MOS-FET, there may be provided thereon an insulating film made of SiO2, and an electrode is provided via this insulating film. Alternatively, there may be provided an n type polysilicon layer on the drain region 13, and the surface of this polysilicon layer is oxidized for a very small distance to provide a thin oxide film (six2), and an electrode is provided on this oxide film. The former arrangement is such that a capacitor, i.e. a storage capacitor, is formed by the n type region 13, the insulating oxide film and the electrode 13a. The latter arrangement is such that a capacitor or a storage capacitor is formed by the electrode 13a, the oxide film + and the n type polysilicon layer. Such arrangements each serve as a d-RAM cell comprising one transistor and one capacitor. Experimental samples have been made for two kinds of substrates and gate oxide films having two kinds of thicknesses Tox, using the same manufacturing parameters except the channel length L (mask level). The memory retention characteristics of these samples are evaluated, and the result is described hereinbelow. The source regior 12 and the drain region 13 are formed by ion-implantation of arsenic (As, implantation voltage: lOOkV, dose : 1 x 10 cm ) to a depth of X. of about J 0.5Am. Also, a channel doping with boron is effected (B, implantation voltage: 30kV, dose: 3 x 10 cm 2). The gate width is set at 100CLm for each sample, and the thickness T of gate oxide film is set at 500A and 1000A, ox respectively, and the resistivity 6 sub of the p type substrate 11 is set at about 7Q cm and about 20#cm, respectively. By the use of a circuit arrangement of the above-mentioned d-RAM having a terminal of its storage capacitor C earthed as shown in Figure 2, its memory S retention characteristic is evaluated. The circuit of a known d-RAM cell is shown in Figure 2. The circuit includes a word line 21, and a bit line 22, a MOS-FET 23, and a storage capacitor 24. To effect "write-in", a write-in voltage V is applied to w the bit line 22, while a voltage VG is applied to the word line 21. In the case where this MOS-FET 23 is an n-channel type, these voltages V and VG are both positive w voltages. When a positive voltage V is applied to the w bit line 22, it should be understood that when the MOS-FET T1 is rendered conductive by the application of a positive voltage VG to the word line 21, a current flows to the storage capacitor 24, and this storage capacitor 24 is charged to a value represented substantially by V w Vth, wherein Vth represents a threshold voltage of the MOS-FET 23. In this state of the FET, electrons are allowed to flow out from the n type drain region 13 which serves as an electrode of storage capacitor 24, so that this region 13 is positively charged due to shortage of electrons therein. Then, the voltage VG of the word line 21 is reset to zero, and thereafter the voltage V of the bit line 22 is w removed. whereupon, the write-in operation is completed. In the state that the memory contents are being retained, there is no need to apply an external voltage to any one of the terminals of the memory cell having the circuit arrangement of Figure 2. As stated above, in this memory content holding state, the n type region 13 is short of electrons and is charged positive, and this n type region 13 is reversely biased relative to the p type substrate 11. This storing mode is called an electrondepletion storing mode. Accordingly, the contents of memory will be preserved for an extended period of time. The memory retention time in tlie electron-depletion storing mode is always longer than that in the electron-accumulation storing mode where the amount of excess electrons is stored in the n type storage region. Although the biasing of the p type substrate 11 of the MOS-FET T1 has not been described with respect to Figure 2, in case there is the fear that the contents of memory would be lost due to a sub-threshold current attributable to a shortened length of the effective channel of the MOS-FET 23, there is applied a substrate bias voltage, which is a negative voltage in this example, to prevent any loss of the memory contents. The memory content holding characteristic is measured in the manner as stated above. Such characteristic for three different samples is shown in Figures 3, 4 and 5, respectively of the accompanying drawings. These data are observed in a d-RAM cell operating at room temperature. The applied voltages are: VG = 5V, and V = 5V. The memory holding time w means a period of time starting from the time at which the word line voltage is returned to zero up to the time when the voltage stored in the storage capacitor 24 has dropped to about one half. The memory holding time is plotted as a function of the effective channel length Left. This Leff is shorter by about 0.5 Sm as compared with the channel length at the mask level. In Figure 3, curves @ and @ and correspond to the substrate bias voltage of OV, -lV, -2V and -4V, respectively. Figure 3 shows the result of the sample when the gate oxide film has a thickness T = 10002 and the resistivity of the ox p type substrate is sub = 7n cm. Figure 4 shows the result of a sample wherein T = 500A and Bsub = 7Q cm. Figure 5 shows the result of a sample wherein T = ox 500A, and Qsub - 20#cm. In all of these samples, the + + depths of the n type source region and the n type drain region are invariably 0.5 m, and the doping amounts of the channels by implantation of boron (B) are identical such as 5¯ 7 x 10 cm . In the case where Leff is long, the memory holding time in each of these samples is long, being about 100 seconds. However, for a shorter Left, the holding time becomes very much shorter. In the sample of Figure 5 in which Leff is 2.5 m, the result of observation is such that even by the application of a substrate bias voltage Vsub, the memory holding time lasts no longer than about 100 Asec. In other words, with respect to the sample shown in Figure 5, it should be understood that unless Leff is 3.5 m, or greater, the device will no longer operate as a d-RAM. On the other hand, with the sample shown in Figure 3, it will be understood that, if the substrate bias voltage V subis set at -4V, the memory contents are held for a sufficient period of time, even if the effective channel length is reduced up to Leff = 1.5 Wm. However, even in this sample shown in Figure 3, in the case where the effective channel length is reduced to Leff = 0.5 Sm, the device can no longer be used as a d-RAM. In the sample shown in Figure 4, even when Vsub = -4V, the memory contents-holding time begins dropping when Leff = 1.5 Sm. As will be understood from the foregoing description of samples, in the case where the channel length is shortened for the purpose of improving the packing density, if the channel length is reduced to about L = 1 Sm (Leff = about 0.5 Am), the memory content holding time drops sharply so that the device will no longer be operated as a d-RAM. Next, explanation will be made of the reasons for the phenomenon that, in the case where the channel length is reduced as shown in Figures 3 to 5, the memory contents are very easily lost. A reduced length of channel gives rise to the effect of lowering, due to the effect provided by the source and drain regions, the potential barrier which, in the case where the channel length is not shortened, serves to prevent the flow of electrons across the source region and the drain region. In a sample having a long channel, the height of the potential barrier in the channel region is controlled almost solely by both the gate voltage VG and the substrate voltage Vsub. However, in the case where the length of channel is reduced, the potential barrier height is also controlled by the source region potential and the drain region potential. In other words, a static induction effect which is noted in a static induction transistor (SIT) begins to appear in the device having a substantially reduced length of channel, so that a current will be allowed to flow across the source and the drain regions even without the application of a gate voltage. Such a current will hereinafter be called a SIT current or a sub-threshold current. In Figure 6 there is shown the relationship between the drain current 1d and the drain voltage Vd (a voltage relative to the source voltage when the latter is zero) for the sample shown in Figure 3 but wherein the channel length L at mask level is 1 Rm (Leff = 0.5 #m). The vertical axis represents the drain current Id, and the horizontal axis represents the drain voltage Vd. Figure 6 shows the fact that, even in the case where the gate voltage VG = O, a current Id flows across the source and drain regions. When the magnitude of the negative substrate bias voltage V sub augmented, the drain current 1d becomes smaller. That is, even when the gate voltage is set at VG = O, a current wili flow across the source and drain regions when a certain amount of voltage is applied therebetween. In a d-RAM which is in the state that a voltage V = V - V is written in the storage capacitor 24 and is m w th stored therein, it should be understood that the voltage V is being applied across the source and drain regions. m Accordingly, a drain current Id as shown in Figure 6 flows, and thereby the stored voltage decreases progressively. The process of reduction of the stored voltage due to the current flowing across the source and drain regions can be analyzed easily. Since the device can be expressed in the form of an equivalent circuit shown in Figure 7 of the accompanying drawings, the voltage stored in the storage capacitor 24 will be attenuated by the current which flows through the MOS-FET 23. By designating the voltage of the storage capacitor 24 as V, the process of attenuation of the voltage can be expressed by the following formula: EMI11.1 wherein t represents time. As will be understood from Figure 6, the sub-threshold current Id varies substantially exponentially relative to the voltage of the storage capacitor That is, the sub-threshold current can be expressed by 1d = 10e aV wherein Io and a can vary depending on the substrate bias VsUb. The above-mentioned formula (1) under an initial condition VO = V can be m solved as follows: EMI12.1 The time required for Vt to become t/r of the initial voltage V will be: m EMI12.2 The value obtained from calculation on the basis of r = 2, and the value obtained from actual measurement are shown in Figure 8 of the accompanying drawings. In Figure 8, the memory-holding time is plotted as a function of the substrate bias voltage. In this Figure, points o represents the value of the measurement, and points + represents the value of the calculation. It will be noted that these two kinds of values are substantially in agreement with each other. More particularly, the attenuation of the stored voltage for a device having a reduced channel length is brought about by the sub-threshold current flowing across the source and the drain regions. Next, comparison is made between Figure 3 and Figure 4. It will be noted that the memory-holding characteristic for a reduced channel device is poor with the sample shown in Figure 4. In other words, the smaller the thickness T of the gate ox oxide film becomes, the worse the memory-holding characteristic becomes. The relationship will be described briefly as follows. Referring back to Figure 1, the gate region 14 of the n-channel MOS-FET is formed most frequently with an n type polysilicon. A sectional construction taken in one-dimensional direction from the gate region 14 toward the p type substrate 11 is shown in Figure 9 of the accompanying drawings. The thickness of the p type substrate 11 is indicated by d. The gate oxide film 15 has a dielectric constant 6 2 and the p type substrate 11 has a dielectric constant E The potential profile when a reverse bias voltage V a (including a built-in potential Vbi) + is applied across the p type substrate 11 and the n type gate electrode 14 is expressed by the formula: EMI13.1 wherein: VO represents a voltage applied to the gate oxide film 15; V represents a voltage applied to the p type sc substrate; NA represents an impurity concentration of the p type substrate 11; and q represents a unit charge. From formulae (4) and (5), the width W of the depletion layer in the p type substrate 11 and the voltage VO which is applied to the gate oxide film are obtained as follows: EMI14.1 Also, the intensities Eo and E of electric fields in the 5 gate oxide film 15 and in the p type region 11 are expressed as: EMI14.2 wherein: EMI14.3 and represents the width of the depletion layer when the voltage V is applied solely a to te p type substrate 11. The potential distribution within the p type substrate 11 is shown in Figure 10 of the accompanying drawings, where the thickness T of the gate oxide film ox is varied. This Figure represents the result when the gate potential is maintained at the same level of the source potential. The vertical axis represents the potential, and the horizontal axis represents the distance from the gate oxide film 15 up to the p type substrate 11. The Figure shows the state in which only a built-in potential Vbi is applied, when the substrate bias voltage Vsub = It should be noted here that Vbi represents a built-in + potential at the junction of the n type region and the p type region. The symbol 0 given at the vertical axis represents a source potential. When T = 0, the ox potential profile is shown by the curve @ , and the potential at the interface of the p type region is rendered to a same level as that of the source potential. As T increases, the potential at the interface of the ox oxide film will increase as indicated by the curve @ . When T =00, i.e. when the oxide film has a substantially ox large thickness, the potential curve will assume constant patterns as shown by broken lines. Conversely, as T ox decreases, the interface potential approaches the potential of the source region. This means that electrons are allowed to enter easily into this lowered potential region from either the source region or the drain region, so that a current is thus allowed to flow. The attempt to develop a short channel structure necessitates a further reduction of the thickness of the gate oxide film. As a result, the tendency that the surface potential drops and that accordingly the current is allowed to flow easily will become more conspicuous. Also, as the channel length is shortened further, the storage capacitance C becomes smaller. At#the same S time therewith, the write-in voltage V for writing-in w the memory cell will also decrease. Since the electric charge Q which is stored in the storage capacitor under the written-in state is given by C V , the value Q = CsVm also naturally decreases as the length of the channel decreases. In the case where the storage capacitor C o is formed with SiO2 of 300A into 10 Wm square in size, the storage capacitance C will be about 0.12 pF. The 5 stored electric charge when V of 5V is stored on this C m S will will be: Q = CsVm C V x 10 x C, which represents about 3 x 106 in number of the electrons stored. However, the energy of alpha-particles which are irradiated from the ceramic package is said to be of the order of 5MeV. When a single alpha-particle is irradiated within a semiconductor body, there will be produced about one million pairs of electrons and holes. This single alpha-particle which is irradiated constitutes an amount sufficient for cancelling out almost all of the electric charge which has been stored in the storage capacitor. In other words, even where other holding conditions are perfect, the electric charge which is being stored in the storage capacitor will be reduced to zero by the irradiation of only a single alpha-particle. It is, therefore, a primary object of the present invention to provide a semiconductor device which will overcome some or all of the above disadvantages. According to the present invention there is provided a semiconductor device formed with an insulationgate field effect transistor having a semiconductor substrate , and having, closer to a surface of said substrate, a source semiconductor region of one conductivity type and a low resistivity, a drain region and a channel semiconductor region of the opposite conductivity type and a high resistivity defined between said source region and drain region, and having a gate electrode formed on a surface of said channel region via a gate insulator layer, characterized in hat: : (a) at least a portion of said gate electrode contacting said gate insulator layer is formed with a material which has a relatively high built-in voltage relative to said source region and which is a metal, a metal silicide, or a highly doped polysilicon of a conductivity type opposite to thatof said source region; (b) an effective channel length of less than 1 Fm is defined by the distance between said source and said drain regions, and (c) said gate insulator laxer is less than 500 . The present invention will now be described in greater detail with reference to the remaining figures of the accompanying drawings, wherein: Figure 11 is a graph showing the potential profile within the p type substrate at a location just below the gate oxide film in case the gate region is formed with a p type polysilicon; Figure 12 is a graph for explaining the dependency characteristic of memory holding time upon substrate bias voltage of an embodiment of the present invention; Figures 13 to 18 are diagrammatic sectional views, showing the structures of d-RAM cell according to embodiments of the present invention; Figure 19 is a diagrammatic explanatory sectional view of a model device for analyzing potential profile; ; Figure 20 is a graph for explaining the boundary condition of the potential profile in the channel region of the model shown in Figure 19; Figures 21 and 22 are graphs for explaining the dependency characteristics of potential barrier height upon normalized channel lengths; Figure 23 is a graph for explaining the dependency characteristic of normalized channel length upon drain voltage for giving a constant potential barrier height A ¯m; Figure 24 is a graph for explaining the dependency characteristic of normalized channel length upon substrate bias, for giving a constant potential barrier height ZE ¯m. Figure 25 is a graph for explaining the dependency characteristic of drain current upon drain voltage for various normalized channel lengths. Figure 26 is a graph for explaining the dependency characteristic of potential barrier height upon channel impurity concentration for various normalized channel lengths. Figures 27 to 29 are diagrammatic sectional views, showing the structures of d-RAM cells according to embodiments of the present invention; Figures 30 to 32 are circuit diagrams of inverters employing the 1405 transistors according to the present invention; Figure 33 is a graph for showing energy loss of alpha particle; Figure 34 is a graph for explaining the dependency characteristic of the density of electron-hole pairs which are excited by alpha particle upon the distance of entry of this alpha particle; Figure 35 is a diagrammatic sectional view, showing the structure of a d-RAM cell according to a further embodiment of the present invention; ; Figure 36 is a graph for explaining the dependency characteristic of the density of electron-hole pairs which are excited by alpha particle up to a depth of I Sm from surface, upon the initial energy of this alpha particle; Figure 37 is a diagrammatic sectional view, showing the structure of d-RAM cell according to another embodiment of the present invention; and Figures 38 and 39 are circuit diagrams of d-RAM cell according to the present invention. Description will now be made of some preferred embodiments of the semiconductor device according to the present invention. It should be understood that, in these embodiments, the gate electrode in n-channel MOS-FET is formed with a polysilicon of a high impurity concentration and having a conductivity type opposite to that of the source region, i.e. with a p type poly + silicon, instead of n type polysilicon as in known types of devices. The potential profile within the p type substrate at a location just below the gate oxide film in case the gate electrode is constructed with a p type polysilicon is shown in Figure 11. Zero potential (o) in this Figure indicates the potential of the source region. Vbi, represents the built-in potential at the junction of + the source region and the p type polysilicon region, and it is about 1.0 to l.lV at room temperature. In the case where the impurity concentration of the p type substrate 15 is about I x 10 cm¯3, the value of Vbi, Vbi will be about 0.25V. In the case where the gate region is formed + with a p type polysilicon, the curve ¯ represents the potential profile when the thickness T of the gate oxide ox film is extremely small. As the thickness T increases, ox the curve will assume the pattern as indicated by 0 That is, the smaller the thickness T is, the higher will ox become the potential at the interface between the oxide film and the p type substrate, so that the electrons do not flow so easily. For instance, where the gate oxide thickness T is substantially large, the potential profile ox is illustrated by the dashed line. By using the sample shown in Figure 3, i.e. the channel-doped device having a thickness T of 10002 and a p type substrate ox resistivity 4 sub of 7Th.cm, and by forming the gate + region with a p type polysilicon, the memory holding time of this device is measured under the same conditions as for the samples shown in Figures 3 to 5, and the resulting memory holding time characteristic is shown by the curve Q in Figure 12. The device has a channel length L at mask level of 1 Sm (effective channel length being 0.5 Sum). In the case of the sample shown in Figure 3, the memory holding time is very short. In Figure 12, however, there can be obtained a memory holding time of about 6 and 100 seconds by setting Vsub at OV and -4V. Just for reference sake, the memory holding time in a device having a conventional n type polysilicon gate region as measured under the same conditions as mentioned above, is 6 Rsec and 6 msec at Vsub = OV and -4V. The trend of improvement in the memory holding time resulting + from the employment of a p type polysilicon gate region in the n-channel device becomes better as the thickness T ox is made smaller. The curve Q in Figure 12 represents the result obtained in the case where the gate electrode is made of platinum. It should be noted here that a sufficient improvement in the memory holding time is effected also by forming the p type gate region of platinum. In addition to the case where platinum is used, similar results can also be obtained from the use of molybdenum and tungsten which have a high Schottky potential barrier and remain stable even at high temperatures. It should be understood that, in attempts for shorter channel lengths, there will arise the tendency that the gate resistance becomes higher, so that the construction of the gate with a metal has sufficient significance. It will be appreciated that similar good results can be obtained from metal silicide such as molybdenum silicide, tungsten silicide, titanium silicide, tantalum silicide or platinum silicide. These materials have a high Schottky barrier height for the source region (bit line region), i.e. n region in this case. A sectional view of the structure of an n-channel + d-RAM cell having a p type polysilicon gate region according to the present invention is shown in Figure 13. Like parts as in Figure 1 are given the same reference numerals and symbols, and their explanation is omitted. In addition, the d-RAM cell has a gate electrode 14a made + + of p type polysilicon, an n type layer 13a of polysilicon, a thin oxide film 31, and a metal electrode 32 such as aluminium. In this structure, a storage capacitor C S is formed by elements 13a, 31 and 32. In the embodiment of Figure 13, the gate electrode 14a is formed only by a + p type polysili#con. It should be understood, however, that in such instances where attempts are made for smaller channel lengths and for higher packing density, bringing about an excessively high resistance of the word line and disturbance in operation, it is effective to provide a p type polysilicon layer on the gate oxide film 15 and also a platinum layer on top of this p type polysilicon layer to thereby lower the resistance of the word line. In place of a platinum layer, a polybdenum layer or a tungsten layer or a metal silicide layer may be provided. It is also useful to provide multilayers of such metals as platinum, molybdenum and tungsten. Alternatively, there may be provided nothing else except metal layers such as + Mo, W and Pt, without the use of p type polysilicon. In any event, any metal may be used, provided that it has a high melting point and that it will not be damaged during subsequent processes conducted at high temperature. The data shown in Figure 12 represent those measured with respect to the arrangement shown in Figure 2 where a terminal of the storage capacitor C , i.e. the aluminium electrode 32, is earthed. In other words, these are data with respect to the depletion storing mode operation where the shortage of amount of electrons is memorized. In contrast, it is natural that the d-RSH cell shown in Figure 13 is intended for accumulation storing mode operation which is ordinarily practised by the application of a positive voltage V to the aluminium ss electrode 32, i.e. this d-RAM cell is operated so as to + accumulate excessive electrons in the n type drain region 13. It should be noted here that the accumulation storing mode operation has the disadvantage that the memory holding time becomes shortened when subjected to a high temperature, as compared with the depletion storing mode operation. In the n-channel MOS transistor having a p type polysilicon gate region according to the present invention, the potential barrier which is produced at the interface between the gate oxide film 15 and the p type substrate 11 is higher than that produced in the conventional n-channel MOS transistor having an n type polysilicon gate region. As a smaller channel length is required, the + + depths x. of the n type source region 12 and the n type J drain region 13 also have to be made smaller. In such instance also, a sub-threshold current tends to flow not only in the vicinity of the interface of junction, but also across the source region and the drain region due to internal bulk conduction, thus affecting the memory holding characteristic. In order to suppress such a flow of + sub-threshold current, it is necessary to provide a p type buried region in the interior portion of the + semiconductor body. For example, a p type region is buried, along the channel, in that part of the substrate + at a location deeper than the depths of the n type regions 12 and 13. In this case, the inner potential barrier can have a greater height, so that the sub-threshold current is reduced further. Such arrangement of the device is shown in Figure 14. The embodiment of Figure 14 shows the case where the p type buried region 33 reaches as far as that portion of the p type substrate 11 located + below the n type drain region 13. That portion of this + p type buried region 33 located below the n type drain region 13 may have an impurity concentration identical with that of the portion of the buried region 33 located along the channel region, or the portion of the buried region 33 located along the channel region may have a higher impurity concentration than that of the remaining portions thereof, such such as channel region. Alternatively, the p type buried region 33 may be provided only in a position located along the the channel region as shown in Figure 15. The n type + source region 12 is preferably separated from the p type buried region 33, in order not to make the capacity of the bit bit line large. It is needless to say that the p type buried region 33 may extend as far as that portion of the + p type substrate 11 located below the n type source region 12, as shown in Figure 16. In this embodiment, the bit line capacitance is liable to become large. In order order to decrease the bit line capacitance, the n type source region 12 is formed to be sufficiently shallow so that this n type source region 12 is separated sufficiently + from the p type buried region 33 as shown in Figure 17. This p type region need only have such impurity concentration as will not develop breakdown when a write-in voltage is accumulated. Thus, the impurity concentration of the at type region is set at the order of 1017cm A similar effect can be achieved by the arrangement shown in Figure 18 wherein the substrate 11 is of of p type, and a p type layer lib is formed on top of this p type substrate 11. It is needless to say that the n type type drain region 13 is in direct contact with the p type substrate 11. It is necessary to avoid the occurrence of current flow due, to the breakdown of either the n type + + drain region and the p type substrate 11 or the n type source region 12 and the p type substrate 11, caused by the application of a write-in voltage. Also, a consideration about a substrate bias voltage is required. In this case: also, like the examples shown in Figures 14 to 17, it is + desirable to arrange the n type source region 12 so as to + be directly adjacent the p type substrate 11, where the bit line capacitance tends to increase. Next, description will be made concerning the turn-off state of the MOS transistor as shown in Figures 14 to 18. In order to facilitate the analysis, the MOS transistor can be regarded as being equivalent to a rectangular structure as shown in Figure 19. On top of a + thin SiO2 gate oxide film 51 is provided a p type polysilicon gate region 52, and at both lateral ends are + + provided an n type source region 53 and an n type drain region 54. The p type region located at the bottom in this Figure corresponds to the buried region. The distance between the source region and the drain region is designated as L, the channel depth from the gate oxide film 51 to the p type buried region 55 as D, and the impurity concentration of the channel region 56 as NA. The potential within the channel region 56 will be sought, under the condition that the potential of the n type source region 53 is assumed to be OV, and that a potential + VG ¯ Vbi is applied to the p type gate region 52, and that that a potential Vsub bi Vbi is appliedto the p type buried region 55 and also that a potential VD is applied to the n type drain region 54. For the purpose of simplicity, let us assume that the oxide film 51 has a sufficiently small thickness, and that the channel region 56 is completely depleted. The potential profile ¯(x, y) in the effective channel region 56 is derived under the above-mentioned boundary conditions as shown in Figure 20, as follows: EMI29.1 EMI30.1 From the formula (10), it is possible to obtain the potential profile within the channel region. For simplicity's sake, it is assumed that Vbi = V. Figure 21 shows the dependency characteristic of the height A #m of the potential barrier produced within the channel region upon the normalized channel length Ln. The parameter therefor is the drain voltage VD. The gate voltage VG is set at OV, and the substrate bias voltage V sub is set at -4V. The drain voltage VD corresponds to the voltage V which is stored in the storage region. m In Figure 21, the value of the normalized channel length L n for providing a same potential barrier height A#m is noted to increase with an increase in the value of VD. Figure 22 shows the relationship between ##m pl and L , with the substrate bias voltage Vsub serving as the parameter. This Figure shows the data in case VG = OV, and VD = 3V. As the substrate bias voltage V sub becomes smaller, the value of L for giving a same value of n A ¯m becomes greater. The process in which the normalized channel length L for imparting a same potential barrier hei n ght # ¯m increases with an increase in the drain voltage VD as shown in Figure 23. The value of L for giving n A QI V 7 V is about 0.96 when, for example, VD =2V, and it is 1.05 at VD = 3V, and it is 1.14 at VD = 5V. Figure 24 shows the relationship between L and n Vsub for the respective values of A#m when VD = 3V It should be noted that L for giving a same A ¯m becomes n smaller with an increase in Vsub. . In the structure, it is possible to give A ¯m = 0.7V at 'on = 1.8 even at Vsub = OV, i.e. even in the state in which no bias voltage is applied to the substrate. If the potential barrier height A ¯m is about 0.7V, the memory holding time of the device serving as a d-Rkvi is sufficiently long, for example, longer than 1 sec at the temperature of 800 C. Therefore, the abovementioned result of observation indicates that a value of about 0.9 ¯ 2.0 of L provides a sufficient memory holding n time length. In the case where the channel depth D is set at 0.1 Am, the device will operate satisfactorily as a dynamic RAM even when the effective channel length is in the range of 0.09 m to 0.2 Am. Figure 25 shows the relationship between the drain current Id and the drain voltage VD in the case where the channel width W is set at 100 pm. In the Figure, one-dot-chain line indicates the experimental value of sample I (Leff = 0.5 m). It will be noted clearly in Figure 25 that by increasing L to 0.9, 1.0, n 1.1, 1.2 and 1.3, the drain current (sub-threshold current) decreases progressively accordingly. The above description has been made under the assumption that the impurity concentration N A of the channel region is held constant. The effect of the impurity concentration N A of the channel region upon the potential barrier height # QI is shown in Figure 26. In this Figure, there are shown two kinds of cases. As is well known, in the case where the impurity concentration of the channel region is increased, the height of the potential barrier ##m will increase. However, # Xm is kept substantially constant for values of N A below a certain level. The maximum value of N A below which # ¯m assumes a substantially constant value will augment with shorter lengths of the channel region. Thus, so long as a required value of \0m is guaranteed, it is desired that N A has as small a value as possible. This is because of the fa; that a small value of NA brings about a reduction of space charge resistance, and the profile of electric field within the channel region is made uniform, so that the intensity of electric field decreases, resulting in a reduction of the hot electron effect. Based on the above-stated consideration, the effective channel length of those d-RAM cells having the structures shown in Figures 14 to 18 can be shortened up to about 0.1 Sm. In the case where the effective channel length is shortened up to this level, the hot electron effect which acts to shift the threshold voltage In a short-channel MOS transistor becomes extremely small. This is because the time required for the electrons to flow through the channel becomes shorter, so that these electrons will reach the electrode region prior to being converted to hot electrons. + In the case where a p type buried region 33 is provided within the channel region along therewith as shown in Figures 14 to 18, the response of the potential profile within the channel to the varying word line voltage becomes quick, and accordingly the operation speed of the device improves. This, of course, is required to be accompanied by the consideration not to increase the bit line capacitance. A concept completely the same with that discussed can be applied to a double-layer polysilicon + d-RMI cell wherein the n type region 13 is formed with an inversion layer. Such an example is shown in Figure 27. In this Figure, the d-RP > t cell has a p type + substrate 41, an n type region 42 which constitutes a bit line region, a low resistivity polysilicon layer 43, + -a p type polysilicon gate region 44, a gate oxide film 45, a field oxide film 46, an oxide film 47, and a p type channel stopper region 48. A storage capacitor C S is formed by elements 43, 45 and 41. The d-RAM cell also includes a substrate electrode 41a. A signal is stored on the basis of the amount of electrons which are stored within the depletion layer which, in turn, is induced below the low resistivity polysilicon layer 43, and this layer may be called an inversion layer. This region will hereinafter be called the drain region for the sake of simplicity. In the same manner and conception for the embodiments shown in Figures 14 to 18, it is also effective + + to provide a p type buried region or a p type substrate. + For example, in Figure 28, there is provided a p type region 49. It is needless to say that the p type buried region 49 may extend as far as that portion of the p type + substrate 41 located below the n type source (bit line) region 42, as shown in Figure 29. It is in the d-RAM cell structure that the suppression of what is called leak current flowing across the source region and the drain region is required most severely at the zero gate bias state of the device. For this reason, description of an application of the MOS transistor according to the present invention has hereinabove been directed solely to a d-RAM cell. In these preceding Figures, there have been shown only a single cell structure. In practice, however, such cell is provided at respective crossing points of a matrix which is formed by bit lines and lwrd lines, wherein word lines are connected to a decoder and bit lines are connected to a sense amplifier. A short channel MOS transistor structure serves to increase transconductance, and also to accelerate highspeed operation in logic circuits. The effect of leakage current at the instant of turn-off of semiconductor devices employed in the formation of logic circuitry is not so great as in a d-RAM cell. However, in the case where leakage currents become excessively large, this will give rise to the tendency that clear differentiation between high. level and low level of an output becomes difficult to be acquired. Accordingly, in a logic circuit using such MOS transistor wherein the effective channel length is smaller than about 1 clam, it is desirable to construct a gate region having a conductivity type the same as that of the channel region, even though there may be some complexity in the process of fabrication. Such gate can be made with a metal having a high melting point or a metal s silicide. Some logic circuits embodying the above-stated principle are shown in Figures 30, 31 and 32. Figure 30 illustrates the circuit diagram of an inverter arrangement in which a load transistor consists of a MOS transistor T3 having its gate electrode directly coupled to its source electrode. A MOS transistor T2 embodies the present invention. Since the turn-off of this MOS transistor T2 can be performed sufficiently well owing to the substantially suppressed leakage current, the high level output is approximately the same as the voltage VDD of the power supply. It should be understood that the load transistor T3 may also be formed with the MOS transistor of the present invention. Figure 31 shows another inverter arrangement in which a constant potential VGG is applied to the gate electrode of a MOS transistor T5. Depending on the requirement of design, the constant potential VGG may be directly coupled to the drain electrode of the MOS transistor T5. A MOS transistor T4 embodies the present invention. It should be understood here again that the transistor T5 may also be formed with the MOS transistor of the present invention0 Figure 32 illustrates a circuit diagram of a complementary inverter. MOS transistors T6 and T7 embody the present invention. This CMOS arrangement may be termed an ideal circuit arrangement such that a current is allowed to flow only during the switching operation, and that no current is allowed to flow during the non-switching period. Besides, the MOS transistor of the present invention which has been described above is such that leakage current is suppressed to a very small level. Thus, the strong point of a CMOS arrangement can be displayed prominently even in shortchannel semiconductor devices and also in high packing density integrated circuits. Furthermore, a short-channel semiconductor device leads to a reduced gate capacitance, and also to a quick response of the channel potential to the gate voltages applied. Therefore, the switching speed of the device is greatly improved, and thus the advantage of a CMOS arrangement can be displayed all the more conspicuously. As described, the CMOS arrangement using the MOS transistor of the present inention is extremely excellent in its high-speed operation and low power dissipation characteristics. Based on the abovedescribed arrangements shown in Figures 30, 31 and 32, there can be easily constructed a multi-input NOR gate and NAND gate, and furthermore a static RAM can be easily formed. It should be understood here that the MOS transistor embodying the present invention is not limited to those arrangements described hereinabove. The respective conductivity types of the constituting semiconductor regions may be reversed. In short, it is only necessary to arrange that a higb=ly-doped region having a conductivity type opposite to that of the source region is provided, as at least part of the gate electrode, so as to be in direct contact with the gate insulating layer or film. In the case where it is intended to further improve the performance, it is only necessary to provide a highly-doped region within the substrate so as to extend along the channel region. It should be noted also that in the case there the depth from the surface of the substrate + up to the p buried region 33 (Figure 14) is designated as D and in the case where the effective channel length is designated as Le E, the device will operate sufficiently well as a d-RAM even where this Leff is nearly in the order of about D to 1.2D, though depending on the substrate bias voltage applied. More particularly, in the case where the depth D is 0.15 Sm, Leff will be 0.15 to 0.18 Am. The MOS transistor which has been described above is such that even in a short-channel structure having an effective channel length Leff of 1 Cirri or less, the leakage current can be suppressed to a sufficiently small value. Thus, its effect or advantage is displayed very prominently especially when a d-RAM is constructed by such a MOS transistor. Even when the effective channel length Leff is set at 0.1 to 0.5 Sm, a sufficient holding of memory contents can be materialized. Now, generally speaking, in the case where the channel length Is reduced in a MOS transistor and when the storage capacitance is reduced as discussed previously, there arises the problem that those carriers which have been created by irradiation of alpha-particle will flow into the storage region which has been rendered to a floating state, to thereby extinguish the stored electric charge or the contents of memory. Figure 33 shows the energy loss characteristics of alpha-particle irradiated into a silicon semiconductor body. The vertical axis represents a loss rate of energy E of alpha-particle relative to the distance x in the direction of entry of alpha-particle. The horizontal axis represents the energy of alpha-particle. In the case where energy g of the alpha-particle is small, this alpha-particle will lose its energy mostly due to its collision with nuclei. In the case where the energy g is great, the alpha-particle will lose its energy mostly when it collides with electrons. In the case where an alpha-particle is irradiated into silicon 63 3 will have a value of about 360keV. The process of loss of energy of alpha-particle due to its collision with electrons may be said to be proportional substantially to 1k in a region where energy E is greater than ± 3, and to be proportional substantially to 4 in a region where E is smaller than 3, as: EMI40.1 wherein: A and K are constants. The depth or range R of entry into silicon of alphaparticle having an initial energy 8 in at the time of irradiation is given by: EMI41.1 The density of electron-hole pairs n(x) excited by alpha-particle along its track of entry is given by: EMI41.2 wherein: represents an energy required for creating g electron-hole pairs. From formulae (12), (13) and (15), the following relations can be obtained: EMI41.3 wherein: x3 represents the distance at which the energy of alpha-particle becomes s 3. In silicon, A = 5.1 x 10 (keV)2/m and # g = 3.6 eV. Supposing that in in 5MeV, the depth of entry of alpha-particle will be 25cm. Accordingly, alpha-particle which is irradiated with an energy of about SMeV will not make many electron-hole pairs at the surface of silicon semiconductor substrate, and will create a greater number of electron-hole pairs when the alphaparticle has lost 90% or more of its energy. An alpha particle is considered, in ordinary cases, to enter into silicon, by initial energy, to a depth of about 10 to 30 Sm.#. As such, the alpha-particle will create a greater number of electron-hole pairs at a depth of entry just before it reaches the depth of 10 to 30 Sm. Figure 34 shows the variation of the energy 6 of an alpha-particle having an initial energy of 5MeV, relative to the distance of its entry into silicon when irradiated thereinto, and also the density of electronhole pairs created thereby. Figure 35 shows an example of a section of a MOS d-RAM r cell which is designed so that the flow, into the storage region, of electrons or holes which are created by irradiation of an alpha-particle is inhibited and that qpcordingly the stored electric 'charge is not cancelled out. In this Figure, like parts in Figure 14 are indicated by like reference numerals and symbols. A + p type buried region 33a is a region of high impurity concentration which is provided along the channel region. A substrate electrode is shown at lla. This electrode lla need not be provided on the entire rear-side surface of the substrate 11. Also, in a short-channel + transistor, an nf type region 12and an n type regiön 13 have a depth of about-0.05 to 0.5 Fm. These two regions are provided shallower as the channel length becomes shorter. The p type buried region 33a is illustrated here here so that it is directly adjacent the n type region 13 which is to serve as the storage region. It should be noted, however, that the buried region 33a need not be directly adjacent to this storage region 13. The directly adjacent arrangement leads to a larger storage + capacitance. In the case where the p type buried region 33a is located to be directly adjacent to the storage region 13 as illustrated here, it is desirable to arrange + the impurity concentration of that portion of this p + type buried region 33a which is directly adjacent the n type storage region 13 so as to be about 3 x 10 cm or lower. Such selection of the impurity concentration of said portion is intended to suppress the occurrence of the + phenomenon that the region located between the n type + region 13 and the p type buried region 33a is broken down by t reverse bias condition during operation and that, accordingly, a current is allowed to flow thereacross. In the case of silicon, the breakdown voltage at the ++ + junction of n p is about 12V in the case where the p type region has an impurity concentration of I x 10 cm If the write-in voltage V is 5V and the substrate reverse w bias voltage V subis -5V, the breakdown voltage has to be set at least 10V. It should be understood that the impurity concentration of that portion of the p type buried region 33a located so as to be in contact with the channel region may be identical with the impurity concentration of that portion which is located directly adjacent to the n type region 13, or it may be higher than + that. Even where the impurity concentration of the p type region 33a is substantially uniform as portions of this region go progressively toward the p type substrate 11, there is being produced, between the p type buried region 33a and the p type substrate 11, a drift electric field due to slight difference in the degree of impurity concentration. That is, those holes located in the p type buried region 33a diffuse toward the p type substrate 11 side. Whereby, there is induced, between the p type buried region 33a and the p type substrate 11 which may have an impurity 15 of, for example 2 x 1015 -3 concentration of, for example 2 x 10 cm or less, an electric field extending from the p type substrate 11 toward + the p type buried region 33a. Those electrons which are created by an alpha-particle in the p type substrate 11 are transferred back to the p type substrate 11 side by this + electric field, and thus they cannot enter into the p type buried region 33a. Therefore, these electrons, after all, will not reach the n type region 13. On the other hand, those holes which have been produced will flow into the p type substrate 11. In order to increase the diffusion electric field or diffusion potential which is induced between the p type buried region 33a and the p type substrate 11, it is only necessary to lower the impurity concentration of the p type semiconductor substrate 11. For example, this impurity concentration is set at about 10 to 10 cm It is needless to say that the level of this impurity concentration may be lower than the above-mentioned range. However, with the structure as described just above and shown in Figure 35, those electrons, among the electrons which have been created by an alpha-particle in + the p type buried region 33a, which are located in the upper half portion of the p type buried region 33a located closer to the n type region 13, will diffuse toward that side which is contiguous with the n type region 13. This diffusion of electrons will be accelerated by a reverse bias electric field applied between the two regions 33a + and 13, so that the electrons will flow into the n type region 13 and will constitute a cause of the loss of the memory. In order to prevent such flow of electrons, it is. only necessary to form an impurity concentration gradient in the p type buried region 33a in the direction toward the p type substrate II. For example, the impurity + concentration of that portion of the p type buried + region 33a located adjacent the channel region and the n type region 13 is set at about 1 x 10 cm with. progressively lowered concentration as the portions of the buried region 33a go progressively toward the p type substrate 11, in such manner that the impurity concentration of lowermost portion of the buried region is less than at least one third of that of the highest impurity concentration. Usually, the impurity concentration of -3 the p type substrate 11 is about 101 cm . However, it is also effective to arrange this impurity concentration of the semiconductor substrate 11 at a low level such as about 15 -3 14 about 1 x 1014cm-3 and also to 1 x 10 cm or about 1 x 10 cm , and also to arrange the impurity concentration of the channel region at a desired higher level by channel doping using ion-implantation + technique. The p buried region, usually, is fabricated by ion- implantation. With the structure referred to abov e which has an impurity concentration gradient in the p type buried region 33a to be progressively decreasing toward the p type substrate 11, those electrons, among the electrons created by irradiation of an alpha-particle, which contribute to the loss of the memory, are only those electrons excited in the narrow region located between the p type buried region 33a and the surface of the semiconductor substrate. It should be understood here that in the case where Left, which is determined by the distance between the source region and the drain region, is 1 Rm or less, the depths + of the n type regions 12 and 13 are about 0.3 m or less. Also, the width of the depletion layer which grows when a + reverse voltage is applied across the n type regions 13 + and the p type buried region 33a is about 0.3 to 0.5 Sm. Accordingly, the depth of ¯.the semiconductor region which contributes to the loss of the memory is no greater than just about 0.8 Sm. On the other hand, an alpha-particle having an energy of several MeV will enter for a distance of about 15 to 25 Sm into, for example, silicon. As shown in Figure 33, when the alpha-particle gains an energy g 3of about 360 keV, it creates electron-hole pairs with the highest probability. In the case where the alpha-particle gains an energy higher than that, the probability of generation of electron-hole pairs drops sharply. Accordingly, it will be understood that the alpha-particle immediately after irradiation to the surface of a semiconductor body has an energy of several MeV, for example about'52¯leV, and that, accordingly, the probability of creation of electron-hole pairs is extremely low near the surface. The alpha-particle will begin to create electron-hole pairs after it has entered into the semiconductor substrate to a certain distance. The number of electron-hole pairs which are created in that portion of semiconductor region up to a depth of about 0.8 pm from the surface of the semiconductor body is about 1/50 or less of the total number (which is of the order of 106) of those electron-hole pairs which are created in the semiconductor body by a single alpha-particle, where the alpha-particle is irradiated in a vertical direction. In other words, several ten thousand electrons will flow + into the n type region 13. In the case where the storage capacitance Cs = O.12pF and the stored voltage V = 5V, m + the number of those electrons which are stored in the n type region 13 or which are short of electrons is about 3 x 106. Thus, the amount of those electrons which flow there into by the irradiation of a single alpha-particle will be smaller by two orders of magnitude than the abovesaid number. Thus, the memory cell embodying the structure of the present invention will not exhibit soft errors due to the alpha-particle even where the cell area is reduced by about another one order of magnitude. Description has been made in the above of instances where an alpha-particle is irradiated normally or vertically onto the surface of silicon substrate. HoTTever, in the case where an alpha-particle is irradiated with an inclination thereonto, the situation will be very different. For example, in the case where an alphaparticle having an initial energy of 5MeV impinges onto the surface of a silicon semiconductor body at an angle of incidence of 300, this alpha-particle will enter into the silicon up to a depth of 25 pm. However, the depth measured from the topmost surface of the device is 12.5 Sm. Also, as the initial energy of an alpha-particle attenuates, the site at which electron-hole pairs are created in a large number will shift toward and closer to the surface of the device. Based on the foregoing considerations, there is shown in Figure 36, as the function of the initial energy g in the total number of electron-hole pairs which are created in that portion of the semiconductor body from the surface of the device up to a depth of 1 jim, which depth substantially influencing the memory-storing action of the memory cell. As the value of g in becomes smaller, the total number of the electronhole pairs created at a depth within 1 m by alpha-particle will become larger. Also, as the angle of incidence e of an alpha-particle becomes smaller, the total number will increase. Usually, the angle of incidence of alpha-particle irradiated from a. package is considered to be 300 or greater, and the minimum energy of alpha-particle is about 1MeV. The number of electron-hole pairs, when e = 300 and when g in = 1MeV, is about 1.5 x 10 . When the in storage capacitance C = 0.1 pF and when the stored S voltage V = 3V, the stored electric charge Q = C ¯ V m s m -13 = 3 x 10 C. The number of corresponding electrons is 6 1.9 x 10 . That is, the amount of electrons created which adversely affect the memory action is no greater than only 10% of the stored electric charge, and thus it can be disregarded. + In Figure 35, the p type buried region 33a is not provided below the.-n type region 12 side which serves as the bit line. This p type buried region 33a may be + provided so as to extend up to below the n type region 12 as in the instance of Figure 16. By so arranging, it is possible to eliminate the adverse effect caused by those electrons excited by an alpha-particle in the bit line at the time of the read-out operation. Such arrangement, however, has the disadvantage that the bit line capacitance becomes increased. Therefore, in such a case, it is + desirable to form the n type region 12 shallow so as to space this region apart from the p type buried region 33a. Figure 37 shows a sectional structure of a memory cell according to the present invention wherein a region corresponding to the n type region 13 shown in Figure 35 is formed by an inversion layer. Like parts in Figure 28 are indicated by like reference numerals and symbols, and + their explanation is omitted. The p type buried region 49 in Figure 37 is provided with an impurity concentration gradient toward the p type semiconductor substrate 41 in the same manner as that of the embodiment shown in Figure 35. + However, unlike the p type buried region 33a shown in Figure 35, there is almost no need to consider reverse bias + voltage of the p type buried region 49. Therefore, there is no need to limit the impurity concentration of that portion of this region located close to the surface thereof to about 1 x 10 17cm#3. The impurity concentration of that portion may be higher than the above-mentioned level. In the embodiment shown in Figure 35, there is provided an n type region 13. Therefore, the above referred to embodiment is able to perform not only the electron-depletion storing mode operation as shown in Figure 38, but also the electron-accumulation storing mode operation as shown in Figure 39. It should be noted, however, that with the structure shown in Figure 37, it is only possible to operate the electron-accumulation storing mode operation as shown in Figure 39. In the circuits shown in Figures 38 and 39, a word line 63 and a bit line 64 are shown. In the embodiment of Figure 38, a terminal of the storage capacitor 64 is earthed. In the embodiment of Figure 39, however, this terminal is connected to a positive power supply VDD by a terminal 65. In the embodiment of Figure 38, a write-in voltage Vw (in the case of an n-channel MOS transistor, it is a positive voltage) is applied to the bit line 64, and a voltage is applied to the word line 63, and thus the MOS transistor 62 is rendered conductive to thereby + allow electrons to flow out from the n type region 13 which serves as the storage region, to cause this n type region 13 to be charged up positively. Thereafter, the voltage on the word line 64 is removed to effect a memorizing + operation. In such an instance, the n type region 13 becomes short of electrons, and it is charged positively. Therefore, this region 13 is reversely biased relative to + its surrounding p type region including the p type region. Thus, memory contents are retained. In the operating state of the device shown in Figure 39, a positive voltage VDD is always applied to a terminal of the storage capacitor 61. Accordingly, in the normal state, an excessive amount of electrons is stored in the n type region 13. During the write-in operation, however, the number of the excessive electrons is reduced. In case the write-in voltage is equal to the power supply voltage VDD, the excessive electrons in the n type region 13 will almost disappear upon application of the write-in voltage Vl. w It should be understood that the structures according to the present invention are not limited to those shown in Figures 13 to 18, 27, 28, 29, 35 and 37. Constitutional regions of devices may have reverse conductivity types. Although such structures will exhibit lower-speed operation, they can provide similar operation if the polarity of voltages applied is reversed accordingly. Embodiments have been described in which the channel stopper region is separated from the buried region. It should be understood, however, that these two regions may be arranged to be in contact with each other. Embodiments of d-RRI cell have a storage capacitor which includes a thin insulator layer. In thOse embodiments, the thin insulator layer consists of an oxide layer. It should be understood, however, that this thin insulator layer consists of other insulator material such as silicon nitride (Si3N4) or tantalum oxide (Ta205). These materials have a dielectric constant larger than that of silicon dioxide (SiO2), such as about 8 (Si3N4) and 22 (Ta205), so that these materials are more suitable for increasing the storage capacitance. Embodiments have been illustrated for those cases in which components are provided on a flat surface of a semiconductor body. It is needless to say that the device may have either a V-l4OS structure or a U-MOS structure. Also, the memory cells shown may be provided at respective cross points of a matrix formed by word lines and bit lines, and the word lines are coupled to a decoder, and the bit lines are connected to a sense amplifier, whereby a semiconductor memory is provided. Devices using a silicon substrate have also been described. It should be understood, however, that the substrate may be made of GaAs. Similar functions can be obtained from devices having a GaAs substrate. The structures embodying the present invention can be fabricated by relying on known oxidation technique, CVD technique, diffusion technique, ion-implantation technique, evaporation-deposition technique, wiring technique, or wet-dry etching technique.

Claims: CLAIMS 1. A semiconductor device formed with an insulation-gate field effect transistor having a semiconductor substrate (11), and having, closer to a surface of said substrate, a source semiconductor region (12) of one conductivity type and a low resistivity, a drain region (13) and a channel semiconductor region of the opposite conductivity type and a high resistivity defined between said source region and drain region, and having a gate electrode (14a) formed on a surface of said channel region via a gate insulator layer, characterized in that (a) at least a portion of said gate electrode contacting said gate insulator layer is formed with a material which has a relatively high built-in voltage relative to said source region (12) and which is a metal, a metal silicide, or a highly -doped polysilicon of a conductivity type opposite to that of said source region; ; (b) an effective channel length of less than 1m is defined by the distance between said source and said drain regions (12 and 13), and (c) said gate insulator layer is less than 5ooh. 2. A semiconductor device according to Claim 1, characterized in that it further comprises a semiconductor region of said opposite conductivity type having an impurity concentration higher than that of said channel region provided beneath said channel region and extending at least a part of said effective channel length. 3. A semiconductor device according to Claim 1 or 2, characterized in that said metal is platinum, molybdenum or tungsten. 4. A semiconductor device according to Claim 1 or 2, characterized in that said metal silicide is molybdenum silicide, tungsten silicide, titanium silicide, tantalum silicide or platinum silicide. 5. A semiconductor device according to Claim 1, characterized in that said drain region (13) is formed with an inversion layer. 6. A semiconductor device according to Claim 1 or 2, characterized in that a highly doped buried region (33) having a conductivity type opposite to that of said source region is formed near said channel region in said semiconductor substrate. 7. A semiconductor device according to Claim 6, characterized in that said buried region (33)extends to contact said drain region (13). 8. A semiconductor device according to Claim 6, characterized in that said buried region (33) extends close to said drain region c13). 9. A semiconductor device according to Claim 6, characterized in that said buried region (33) extends to both of said drain region (13) and said source region (12). 10. A semiconductor device according to Claim 1, characterized in that (a) said semiconductor substrate (ii) has a high impurity concentration and has a conductivity type opposite to that of said source region; (b) said semiconductor device further includes, at a surface of said substrate, a region of a lesser impurity concentration than that of said substrate and of a conductivity type same as that of said substrate, and (c)said source region, said drain region and said channel region are formed in said region of a lesser impurity concentration. 11. A semiconductor device according to Claim 6, characterized in that said buried region (33) has such an impurity concentration gradient that the degree of concentration is lower progressively toward the interior of said substrate from said surface thereof. 12. A semiconductor device according to Claim 1, or Claim 2, characterized in that said insulation-gate transistor constitutes a memory cell of a dynamic random access memory. 13. A semiconductor device according to Claim 12, characterized in that the electrode (32) is formed on the drain region (13) via a thin insulator layer (31) so that a storage capacitor is formed by this insulator layer, the drain region and the electrode. 14. A semiconductor device according to Claim-12, characterized in that a storage capacitor (cos) is formed in said drain region (13). 15. A semiconductor device according to Claim 13 or 14, characterized in that said source region (12) serves as a bit line (63), and said gate electrode (14a) serves a word line (64). 16. A semiconductor device according to Claim 1 or 2, characterized in that said insulation-gate transistor serves as one of transistors constituting a complementary inverted circuit.

Inventors: NISHIZAWA, JUN-ICHI, OHMI, TADAHIRO
Applicants: ZAIDAN HOJIN HANDOTAI KENKYU SHINKOKAI
Application year: 1980
Main classification: H01L29
IPC codes: H01L29, H01L23, H01L27