INTEGRAL COMPOSITE OF POLYCRISTALLINE DIAMOND AND/OR CUBIC BORON NITRIDE BODY PHASE AND SUBSTRATE PHASE AND PROCESS FOR MAKING IT

Abstract: A self-supporting composite comprised of a mass of diamond and/or cubic boron nitride crystals coated with ele­ mental non-diamond carbon in contact with a substrate is infiltrated by fluid silicon producing a like-shaped composite of a polycrystalline body phase integrally bonded to a subs­ trate supporting phase. The composite is useful as an abrasive, cutting tool, nozzle or other wear-resistant part.

Description: Integral coqrsite of polycristalline diamond ana/or cubic boron nitride body Phase and substrate p;lase and process for m.aR.ing it This invention relates to a self-supporting composite of predetermined shape, size and composition comprised of a polycrystalline diamond and/or cubic boron nitride body phase integrally bonded to a substrate supporting phase and to process therefor. The crystals in the polycrystalline body phase of the composite are bonded together by a medium comprised of silicon carbide and elemental silicon. The present process utilizes a partial vacuum, pressures substantially below the superpressures required by the diamond or cubic boron nitride stable region. The present composite can be produced in a variety of configurations and a wide range of shapes and dimensions. It is useful as an abrasive, cutting tool, nozzle or other wear-resistant part. The composite of this invention is an integral, self supporting shaped body comprised of a crystal-containing phase or body wherein the crystals are diamond, cubic boron nitride or mixtures thereof, and a substrate supporting phase free of the crystals of the crystal-containing phase or body. The substrate can be elemental non-diamond carbon; silicon carbide and silicon; silicon carbide, silicon and elemental non-diamond carbon; or, in a separate embodiement of this invention, a preformed silicon carbide. The crystal-containing phase, i.e. polycrystalline body phase,is the work or load-bearing phase and is integrally bonded to the substrate supporting phase. Specifically, in the present composite, the polycrystalline body phase is comprised of crystals selected from the group consisting of diamond, cubic boron nitride, and mixtures or combinations thereof, adherently bonded together by a bonding medium comprised of silicon carbide and elemental silicon, said crystals ranging in size from submicron up to about 2000 microns, the density or volume of said crystals ranging from about 1% by volume to about but less than 80% by volume of said polycrystalline body phase, said bonding medium being present in an amount ranging up to about 99 D by volume of said poiycrystalline body phase, said bonding medium being disbributed at least substantially uniformly through said polycrystalline body phase, the portion of said bonding medium in contact with the surfaces of said crystals consisting essentially of silicon carbide, said polycrystalline body phase being at least substantially pore-free. Those skilled in the art will gain a further and better understanding of the present invention from the detailed description set forth below, considered in conjunction with the figures accompanying and forming a part of the specification, in which: Figure 1 is a sectional view through an apparatus showing an embodiment for carrying out the present process; Figure 2 is a photomicrograph (magnified 100 X) of a polished side of an integral composite prepared by the present process wherein said substrate is either carbon, silicon carbide and silicon, or silicon carbide, silicon and carbon and Figure 3 is a photomicrograph (magnified 250 X) of a portion of the polished side of Figure 2. Figure 4 is a photomichrograph (magnified 150 X) of a polished side of an integral composite wherein the substrate is preformed silicon carbide. The diamond crystals used in the present process can be natural or synthetic. The diamond and/or cubic boron nitride crystals of the present invention can range in size in largest dimension from submicron up to about 2000 microns, and generally up to about 1000 microns. The particular size or sizes used depends largely on the particular packing or density of crystals desired and on the particular applications of the composite. For example, for most abrasive applications, crystals no greater than about 60 microns are preferred. Preferably, to maximize the packing of the crystals, they should be size-graded to contain a range of sizes, i.e. small, medium and large-sized crystals. Preferably, the size-graded crystals range from abour 1 micron to about 60 microns, and preferably within this size range, about 60% to about 80% by volume of the total mass of crystals are of the larger sized portion of the range, about 5% to about 10rio by volume are of medium size with the balance constituting the small-sized crystals or particles. Sizing of the crystals is facilitated by the jetmilling of larger crystals. Preferably, the crystals are chemically cleaned to remove any oxides or other impurities from the surface thereof before use in the present process. This may be accomplished by heating the crystals in hydrogen at about 9000C for about one hour. In the crystal-containing carbonaceous mass the carbonaceous material is elemental non-diamond carbon, an organic material, or mixtures thereof. On the other hand, in that embodiment where a preformed silicon carbide substrate is not formed, the carbonaceous substrate consists essentially of elemental non-diamond carbon, a solid organic substrate material and mixtures thereof. The organic material of the carbonaceous mass (as well as the solid substrate organic material of the carbonaceous substrate)decomposes completely at an elevated temperature below 14000C, and ordinarily decomposes completely at a temperature ranging from about 500C to about 12000C to produce elemental nondiamond carbon and gaseous product of decomposition. Specifically, it must decompose completely to produce elemental non-diamond carbon and gaseous product of decomposition before being infiltrated by fluid silicon. The process for producing a composite employing a substitute which is not a preformed silicon carbide, comprises providing a crystal-containing carbonaceous mass composed df at least a substantially uniform mixture of diamond and/or cubic boron nitride crystals and a carbonaceous material wherein none of the surfaces of said crystals are exposed significantly and wherein at least a substantial amount of said crystals are enveloped and separated from each other by at least a coherent continuous coating of said carbonaceous material on said crystals, said carbonaceous material being selected from the group consisting of elemental non-diamond carbon, an organic material, and mixtures thereof, said organic material being present in an amount sufficient on decomposition to produce on the crystal surfaces it coats at least a coherent contiguous coating of elemental non diamond carbon, providing a carbonaceous substrate consisting essentially of elemental non-diamond carbon, a solid organic substrate materia], and mixtures thereof, providing a mold with a cavity of desired size and shape and means for introducing fluid silicon into said cavity and means for maintaining a partial vacuum in said cavity, filling said cavity with a preform comprised of said crystal-containing carbonaceous mass in contact with said carbonaceous sub strate forming an interface therewith and confining said preform therein, said preform being the form desired of said composite, said organic material and said solid organic substrate material decomposing at a temperature below 1400or to elemental non-diamond carbon and gaseous product of decomposition and being present in an amount sufficient which on decomposition produces at least sufficient elemental nondiamond carbon to maintain said preform, associating said filled cavity with a mass of silicon, providing the resulting associated structure with a partial vacuum wherein the residual gases have no significant deleterious effect on said associated structure, heating said associated structure in said partial vacuum to a temperature above 14000C at which said silicon is fluid and which does not have a significantly deleterious effect on said crystals and infiltrating said fluid silicon into said preform at least through said crystal-containing carbonaceous mass and at least into contact with the contacting surface of said substrate filling the pores through said interface so that it is at least substantially pore-free, said partial vacuum being at least sufficient to remove gas from said preform which blocks said infiltrating fluid silicon, said infiltrating silicon reacting with non-diamond elemental carbon forming silicon carbide, cooling the resulting compo te in an atmosphere which has no significant deleterious effect on it, recovering the resulting composite of polycrystalline body phase integrally bonded to a substrate phase, said polycrystalline body phase being substantially pore-free wherein the crystals ranging from about 1 by volume up to about but less than 80r by volume of the total volume of said polycrystalline body phase are bonded together by a bonding medium comprised of sllicon carbide and elemental silicon The process for producing a composite utilizing a preformed silicon carbde substrate comprises providing a crystal-containing carbonaceous mass composed of at least a substantially uniform mixture of diamond and/or cubic boron nitride crystals and a carbonaceous material wherein none of the surfaces of said crystals are exposed significantly and wherein at least a substcltial amount of said crystals are enveloped and separated arom each other by at least a coherent continuous coating of said carbonaceous material on said crystals, said carbo.aceous material being selected from the group consisting of elemental non-diamond carbon, an organic material which @mpletely decomposes at a temperature below 1400 C to elemental non-diamond carbon and gaseous product of decompos tion, and mixtures thereof, said organic material being present in an amount sufficient on decomposition to produce on ne crystal surfaces it coats at least a coherent continuo; ; coating of elemental nondiamond carbon and sufficient elemental non-diamond carbon to maintain said prefor,providing a supporting silicon carbide substrate, prov@ding a mold with a cavity of desired size and shape and mean for introducing fluid silicon into said cavity and meas for maintaining a partial vacuum in said cavity, fillin said cavity with a preform comprised of said crystal-cor.'aining carbonaceous mass contact with said silicon carbide substrate forming an interface therewith and confining s; ;d preform therein, said preform being the form desired of sad composite, associating said filled cavity with a mass oi silicon, providing the resulting associatied structure w@@h a partial vacuum wherein the residual gases have no Significant deleterioll effect on said associated structure, heting said associa- ed structure in said partial vacuum to atemperature above 14000C at which said silicon is fluid ancathich does not have a significantly deleterious effect on aid crystals said infiltrating said fluid silicon into said preform at leas through said crystal-containing carbonaceou mass and at least into contac@ nach the @@t@cting surface of said substrate fillung the pores througn said interface so that it is at least substantially pre-fre, said partial vacuum being at least sufficient to remove gas from said preform which blocks said iifiltrating fluid silicon, said infiltrating silicon reacting with non-diamond elemental carbon forming silicon carbide, cooling the resulting composite in an atmosphere which has no significant deleterious effect on it, recovering the resulting composite of polycrystalline diamond and/or cubic boron nitride body integrally bonded to said silicon carbide substrate, said polycrystalline body being substantially pore-free wherein the crystals ranging from about 1% by volume up to about but less than 80urn by volume of the total volume of said polycrystalline body are bonded together by a bonding medium comprised of silicon carbide and elemental silicon. As used herein the term, elemental non-diamond carbon, includes all forms of elemental non-diamond carbon including graphite. In addition, the term, elemental nondiamond carbon,includes all physical forms of elemental nondiamond carbon such as, for example, a continuous solid, porous solid,a powder, fiber, cloth and mixtures thereof. In the present invention, the uninfiltrated green structure, i.e. preform, from which the composite is produced is formed into the shape and dimensions required of the composite since it undergoes no change or no significant change in shape or dimension during infiltration by the silicon. Also, the preform has the form required of the composite such as, for example, shape and thickness of ths polycrystalline body and substrate components of the composite, and volume fraction of crystals. In addition, the morphology of the crystals in the polycrystalline body component of the composite is the same or is not significantly different from that of the crystal-containing carbonaceous mass of the preform. In carrying out the process of this invention, the crystal-containing carbonaceous mass is produced by admixing the mass of crystals in desired amount with the carbonaceous material in desired amount to produce a uniform or at least a substantially uniform mixture wherein none of the surfaces of the crystals are exposed, or wherein at least none of the surfaces of the crystals are exposed to any significant extent. Also, at least a substantial amount, i.e. at least about 90Ó by volume, of the total volume of crystals of the mixture are enveloped and separated from each other by at least a coherent coating of the carbonaceous material. The surface of the crystal that is not coated with carbonaceous material is not exposed, but it is in direct contact with the surface of another crystal. A number of techniques can be used to form the present mixture of crystals and carbonaceous material and to shape the resulting mixture to the form and dimensions desired in the final produce, i.e. composite. For example, the elemental non-diamond carbon can be deposited on the crystals by pyrolytic decomposition of a carbonaceous gas such as methane. Specifically, the crystals can be placed in a furnace provided with a non-oxidizing atmosphere sucri as hydrogen, nitrogen or an inert gas such as argon. A source of elemental non-diamond carbon such as natural gas or methane is fed into the furnace and the crystals are hLat- ed to a temperature sufficient to decompose the methane, ordinarily about i2000C, whereby a pyrolytic carbon is deposited on the crystals. In forming the crystal-containing carbonaceous mass, when an organic material is used, it can be a solid or liquid at room temperature and should have no significant delete lous effect on the crystals. If such organic material is solid, it should be sufficiently softened, or preferably dissolved in a suitable solvent to form a solution, before being admixed with the crystals in order to produce a uniform mixture. The organic material can be admixed with the crystals by a number of techniques including stirring th" crystals with the organic material. If desired, the mixture then can be treated, for example subjected to a vacuum o heat, to remove any solvent present and further heated tc. decompose the organic material producing elemental nondiamond carbon in situ. Preferable,howevcr, the wet, pl3.ble or plastic mixture is shaped or molded on the substrate ' the shape and dimensions desired of the final product, and the resulting shaped structure or preform treated, if necessary, to retain its shape and dimensions and impart sufficient mechanical strength for handling. For example, a curing or cross-linking agent can be added to the organic material and the resulting curable organic material admixed with the crystals, shaped to the form and dimensions desired of the final product, and cured sufficientJy to retain its form. Shaping of the wet, pliable or plasti( mixture can be carried out by a number of techniques, for example, in a temporary mold or in the mold which is to receive the fluid silicon. The solid organic substrate material can be in any desired form such as, for example, a continuous solid, a porous solid, a powder, fiber or mixtures thereof. Representative of the organic material and solid organic substrate material useful in the present process are polymers of aromatic hydrocarbons such as polyphenylene and polymethylene, derivatives of polynuclear aromatic hydrocarbons contained in coal tar such as dibenz..tnthracene and chrysene. Additional examples of useful organic materials are the epoxy resins such as the reaction product of epichlorohydrin and Bisphenol-A. Still additional examples of useful organic materials are phenolic resins obtained by the condensation of phenol or substituted phenols with aldehydes such as formaldehyde, acetaldehyde, and furfural. Specific examples are the condensation products of phenolformaldehyde, resorcinol-formaldehyde, aniline-formaldehvde, and cresol-formaldehyde. The preformed polycrystalline silicon carbide substrate can vary in properties such as density, microstructure, and mechanical strength depending on the particular applifat- ion of the composite. Specifically, the density of the supporting silicon carbide substrate can rne from about 30% to about100%. Density given herein of the polycrystalline silicon carbide body used as a substrate is tie fr.c.tional density based on the theoretical density of th silicon carbide of 3.21 g /cc. For example, in this composite, a silicon carbide substrate having a density of about 30% or higher makes the composite useful as a seal, whereas a substrate with a density of about 85 or higher makes it useful as a tool in sert. Ordinarily, the higher the density of the silicon carbide body, the higher is its mechanical strength. In this embodiment, the silicon carbide particles are bonded directly to each other, i.e. SiC-SiC. Since silicon carbide does not melt, such a silicon carbide bond is termed as being formed by solid state diffusion or welding. The polycrystalline silicon carbide substrate is a body comprised of silicon carbide, i.e., it contains silicon carbide in an amount of at least 90,2c by weight and usually at least 95% by weight, and generally from 6% to 99% or higher by weight, of the body. Any Constituent or component of the present polycrystalline silicon carbide body other than silicon carbide should have no significant deteriorating effect on the mechanical properties of the resulting composite. Specifically, it should have no significant deteriorating effect on the properties of the silicon carbide and all other materials used in the present process in preparing the composite or on the properties of the composite itself. The preformed silicon carbide substrate can be prepared by processes such as hot pressing or sintering. Specifically, it can be prepared by hot-pressing silicon carbide powder, which can range in size from submicron to about 2000 microns,at high temperatures and pressures, for example, 12000C to 1850 C to 700 kg/cm2 or higher. The resulting hot pressed body can range in density from about 30% to about 80%. To achieve higher densities ranging up to about 10(,4, a densification additive such as boron or boron carbide D}IlSt be included in the silicon carbide powder. Specificallu polycrystalline silicon carbide bodies can be prepared b hot-pressing processes disclosed in U.S. Patents 3,853,50;;; 3,960,577; 4,023,975 and 4,108,929; all assigned to the assignee hereof and all, by reference, are incorporated herein. In one hot-pressing process, a disl)ersion of :;ub- micron powder of silicon carbide and an amount of boron or boron carbide equivalent to 0.5-3.0% by weight of boron, is hot-pressed at 1900-20000C under 35u-7CO ky/cm2 to produce a boron-containing silicon carbide body. In another hotpressing process, 0.5-3.0 by weight of elemental carbon or carbonaceous additive heat-decomposible to elemental carbon is included in the dispersion. The present silicon carbide body also can be prepared by sintering processes disclosed in U.S. 4,004,934 and 4,041,117 all assigned to the assignee hereof, and all by reference, are incorporated herein. Briefly stated, the sintered silicon carbide body can be prepared by providing a submicron particulate mixture of silicon carbide, boron additive and a carbonaceous additive which is free carbon or a carbonaceous organic material which is heat-decomposible to produce free carbon, and shap- ing the mixture into a green body. In an alternative method &alpha;-SiC, submicron in size but with an average particle size twice that of e-SiC, is admixed with the particulate mixture in an amount of 0.05% to 5% by weight based on the B-SiC. The green body is sintered at a temperature ranging from about 1900 C to 2300 C to the required density. Specifically, the boron additive may be in the form of elemental boron, boron carbide or a boron compound which decomposes at a temperature below sintering temperature to yield boron or boron carbide and gaseous products of decomposition and is used in an amount equivalent to 0.3% to 3.0U0 by weight of elemental boron based on the amount of silicon carbide. During sintering, the boron additive enters into solid solution with the silicon carbide, and when a@@unts of the additive in excess of that equivalent to about lao by weight of elemental boron are used, a boron carbide phase also precipitates. The carbonaceous additive is used in an amount equivalent to about 0.1% by weight to about 1.0 by weight of free carbon based on the amount of silicon carbide. The additive can i)e free carbon or a solid or liquid carbonaceous organic material which completely decomposes at a temperature of 500C to 1000 C to submicron size free carbon and gaseous products of decomposition. Examples of carbonaceous additives are polymers of aromatic hydrocarbons such as polyphenylene or polymethylphenylene which are soluble in aromatic hydrocarbons. The sintered body is comprised of silicon carbide and based on the amount of silicon carbide, from about 0.3at to about 3% by weight of boron and up to about la by weight of free carbon. The boron is in solid solution with the si]icon carbide or, alternatively, in solid solution with the silicon carbide and also present as a boron carbide phase. The free carbon, when it is detectable, is in the form of submicron particles dispersed throughout the sintered body. The thickness of the silicon carbide substrate can vary depending on the final application of the resulting composite, but it should be at least sufficiently thick to provide adequate support for the polycrystalline diamond and/or cubic boron nitride body component integrally bonded thereto. For most applications, to provide and insure satisfactory support for the polycrystalline diamond andjor cubic boron nitride body, the silicon carbide substrate is preferably at least about twice the thickness of the polycrystalline body component. A mold with a cavity of desired shape and size is used. The mold should be made of material which has no significantly deleterious effect on the present process iir composite. Preferably, it is made of graphite and preferably it is machinable to the size and shape desired of the final product. Alternatively, the cavity of the mold can be fitted, lined or pressed with a material which is substantially inert with respect to the present process .Ind product, such as hexagonal boron nitride powder, which en be used to produce the final composite of desired shape "nd size. A parting agent, such as a film of hexagonal boron nitride powder, preferably is sprayed on a material such as graphite to enable a clean separation of the final product from the mold. The mold has means for introducing fluid silicon into the cavity. For example, such means can be holes passing through the mold wall and open to the cavity and to the outside of the mold. Preferably, these infiltration holes are located at the top or in the upper portion of the mold so that the flou of fluid silicon into the cavity is promoted by gravity. These holes can vary in number and-diameter depending largely on the extent desired for introducing fluid silicon into contact with the confined preform. The number of infiltration holes used is not critical but with an increasing number of infiltration holes, the faster the silicon is introduced into contact with the confined preform within the mold thereby reducing total infiltration time. On the other hand, the infiltration holes should not be so great in number or diameter as to allow the fluid silicon to be introduced into the cavity to the extent that silicon surrounds the confined preform or the crystal-containing carbonaceous mass of the preform, since that would entrap gas within the cijstal- containing mass and prevent infiltration of the fluid silicon therethrough. Infiltration of the fluid silicon should proceed through the crystal-containing carbonaceous mass of the preform towards a single external surface or external point of the crystal-containing carbonaceous mass or of the interface to allow removal of pockets of gas thereby allowing silicon infiltration throughout the crystal-containing carbonaceous mass and interface. Infiltration of the fluid silicon through the confined crystal-containing carbonaceous mas: and interface of the preform is by capillary action. Generally, the infiltration holes in the mold range from about 0,254 mm to 3,175main diameter and holes of larger size and provide no significant advantage. Due to the surface tension of elemental silicon which prevents it from passing through such small holes, these holes are provided with ., wick, preferably or elemental non-diamond carbon, which passes, i.e., wicks the fluid silicon through the holes and into the cavity. The smaller the holes, the less likely excess elemental Si/SiC material will be left on the finished p aict Ordinarily, any excess Si/SiC material on the surface of the finished product is in the form of a nib or glob which can be ground, machined or polished off in a conventional manner The preform, i.e., the crystal-containing carbonaceous mass in contact with the silicon carbide substrate forming an interface therewith, in the form required of the composite, should fill the cavity within the mold in order to produce t final product or composite of desired shape and dimensions since there is no change or no significant change between the volume occupied by the preform and the final infiltrated product, i.e., composite. The crystal content of the shaped crystal-containing carbonaceous mass of the preform can he in the form of a monolayer or in excess of a monolayer of crystals. The mold, i.e., filled cavity, then is closed. Vents in the mold preferably located in the bottom portion of the mold, are used to evacuate the cavity and maintain the desired partial vacuum therein. The filled mold is associated wit mass of elemental silicon, which preferably is located above the mold. Figure 1 shows a cross-section of an associated structure or apparatus 10 illustrating a preferred embodiment for carrying out the present process. Supporting frame 11 is non-metal, preferably is made of graphite and can be machined to the configuration desired. Mold 12 and cavity 13 are provided with a non-metallic connector 19, preferably of graphite, which passes through cavity 13 and which has a threaded end to keep mold 12 closed during silicon infiltration. The preform 14 fills cavity 13 surrounding connector 19. Holes 15 and 16 are provided with wicks 1, and 18 which pass silicon 20 in fluid form into cavity 13 to infiltrate preform 14 at least through crystal-contain in,: carbonaceous mass or mixture, 14a and 14b, and at least into contact with the contacting surface of carbonaceous substrate 14c and at least filling interface 14d and 14e so that illter- faces 14d and 14e are pore-free, or at least substantially pore-free. Vent holes 21 and 22 allow for the escape of gas from cavity 13 which exit out of vent 23. Vent holes 21, 22 and 23 are used to maintain the required partial vacuum in cavity 13. The carbonaceous substrate 14c can be graphite with a density no greater than 0.96 g/ce and an interconnecting cell structure which permits silicon infiltration through such graphite substrate reacting with a-l of the graphit producing a substrate of silicon carbide and elemental silicon and free of elemental non-diamond carbon and free of pores. The silicon carbide makes the substrate hard and strong which makes the composite useful as a grinding wheel. A silicon carbide substrate with a density of about 85% or higher also makes the substrate hard. Specifically, connector 19 leaves a hole of like diameter passing through the finished composite which has the form of a wheel with a sharp edge, i.e., the present polycrystalline body component, making the composite useful as a grinding wheel. The associated structure or apparatus 10 is placed within a furnace and provided with a partial vacuum wherein the residual gases have no significantly deleterious effect on said associated structure. Specifically, the furnace chamber if maintained under the partial vacuum which also maintains the associated structure, i.e., the confined preform within the cavity of the mold and the associated mass of the elemental silicon, under partial vacuum.The partial vacuum should be at least sufficient to remove pockets of gas which may be trapped within the confined preform and which would block the infiltrating fluid silicon thereby leaving pores in the finished product. Generally, such a partial vacuum ranges from about 0.01 torr to about 2 torr, and usually from about 0.01 torr to about 1 torr to insure, removal of entrapped gas in the confined preform. Ordinarily and as a practical matter, the furnace used is a carbon furnace, i.e., a furnace fabricated from" elemental non-diamond carbon. Such a furnace acts as an oxygen getter for the atmosphere within the furnace reacting with oxygen to produce CO or CO2 and ther@by provides a non-oxidizing atmosphere, i.e., the residua] gases have no significantly deleterious effect on the crystals or infiltrating silicon. The present inliltration cannot be carried out in air because diamond graphitizes rapidly in air above 8000C and the liquid silicon would oxidize to form solid silica before any significant infusion by silicon of the confined mixture occurred. In such instance where a carbon furnace is not used, it is preferable to have an oxygen getter present in the furnace chamber, such as elemental non-diarnond carbon, in order to insure the maintenance of a non-oxidizing atmosphere. Alternatively, such non-oxidizintr atmosphere, or atmosphere which has no significant delterious effect on the associated structur@ within the furnace, can be provided by a sufficiently hih partial vacuum, i.e., about 10-2 torr to 2 torr. The associated mass of silicon and confined preform are heated to infiltration temperature which is about 14C0OC. When the preform contains organic material, such organic material decomposes completely at a temperature below 14()00C producing elemental non-diamond carbon and gaseous product of decomposition. Therefore, the preform that is infiltiated by the silicon is comprised of diamond and/or cubic bore; nitride crystals and elemental non-diamond carbon in the crystal-containing mass and elemental non-diamond carbon in the substrate. The elemental non-diamond carbon in the shaped crystal-containing mass that is infiltrated by silicon should have sufficient interconnecting pores or cell stricture which allows the silicon to infiltrate therethrough. Specifically, such elemental non-diamond carbon in the crystal-containing mass may range in interconnecting por@sity but its density should not exceed 0.96 g/cc, because if @ is more dense than 0.96 g/cc, fluid elemental silicon may nXt penetrate it, or if it should penetrate or infiltrate such a dense elemental non-diamond carbon, the resulting polycrystalline body will puff up and be distorted . The ma @imum inter@onnecting por@sity of the elemental non-diam@nd carbon of the shaped crystal-containing mass is that which maintains its shape and dirrlellsions with none of the surfaces of the erystals being exposed significantly, and generally,such maximum porosity is about 90% by volume of the total volume of elemental non-diamond carbon in the crystal-containing mass which is infiltrated by silicon. The pores in the elemental non-diamond carbon in the shaped crystal-containing mass that is infiltrated by silicon should be distributed uniformly or at least significantly uniformly throughout the mass or mixture to prevent formation of excessively large pockets or elemental silicon which may lower the mechanical properties of the resulting polycrystalline body phase thereby limiting its applications. The pores can range in size, and generally can range up to about 2000 microns, but preferably are not larger than the size of the crystals used. For best results, the pores are submicron in size. The porosity of the shaped mixture -of crystals and elemental non-diamond carbon of the preform is determinalile by a number of conventional techniques. If desired, the preform can have a plurality of the present crystal-containing carbonaceous mass, each forming an interface with the other and differing from each other significantly in crystal content producing a composite with a graded structure with respect to its crystal content. Specifically, the resulting integrally bonded composite body has a plurality of polycrystalline body phases integrally bonded to each other and differing from each other significantly in crystal content, and in such a composite the substrate supporting phase would have at least about twice the thickness of the total thickness of the polycrystalline body phases. A composite with such a graded crystal structure, preferably decreasing in crystal content as the supporting substrate phase-is approached, is particularly useful for a number of abrasive applications. On the oticr hand, the elemental non-diamond carbon substrate to be bonded can vary in structure, but it should have a structure or form which, if not infiltrated by fluid silicon, allows the resulting composite to be self-supporting For example, the elemental non-diamond carbon substrate can be non-porous or porous, or have a non-interconnecting pore or cell structure, or a non-interconnecting pore structure open to the interface or an external surface of the substrate, or an interconnecting pore structure, or an interconnecting pore structure open to the interface or an external surface ol the substrate, or any combination of such structures. The maximum porosity of the elemental non-diamond carbon substrate is that which maintains the shape of the preform, and generally, such maximum porosity is about 90% by volume of the total volume of elemental non-diamond carbon of the substrate. Thre is no critical minimum amount or volume of porosity for the substrate since infiltration of the substrate is not required. The particular density, porosity or structure of the elemental non-diamond carbon substrate of the preform depends largely on the particular composition and structure desired of the composite for its particular application. Specifically, the particular density or porosity of the elemental non-diamond carbon substrate is the extent to which silicon may be infiltrated therein, and therefore, it is the extent to which silicon carbide can be formed in situ and be present along with elemental silicon in the substrate supporting phase of the composite. For example, if the non-diamond elemental carbon substrate is non-porous, or not significantly porous, fon example graphite, and should the silicon be infiltrated only through the crystal-containing mass and only into contact with the contacting surface of the graphite substrate wetting and reacting with such contacting surface forming silicon carbide in situ filling the pores, if ans, of the interface forming an integral bond of elemental silicon and silicon carbide through the interface making it pore-free or at least substantially pore-free, the composite produced is comprised of the present polycrystalline body phase integrally bonded to a substrate supporting phase comprised of graphite. Alternatively, where the elemental non-diamond carbon substrate has only non-interconnecting pores open to the interface and is otherwise non-porous, for example, graphite, the silicon will infiltrate into such pores of the substrate reacting with the elemental non-diamond carbon forming silicon carbide in situ, generally in the form of fingers extending from the interface into the substrate and such finger is comprised of elemental silicon bounded by silicon carbide formed in situ producing a composite comprised of the present polycrystalline body phase integrally bonded by elemental silicon and silicon carbide to a substrate Supporting phase of elemental nondiamond carbon. In another embodiment, the substrate may have an interconnecting cell structure which allows silicon infiltration by capillary action. If partially or total]y infiltrated by the silicon without complete reaction of the elemental non-diamond carbon, the resulting substrate supporting phase is comprised of silicon carbide, elemental silicon and elemental non-diamond carbon and will always contain silicon carbide, or elemental non-diamond carbon, or silicon carbide and elemental non-diamond carbon, in an amount or volume at least about 10% by volume of the substrate supporting phase. However, should the silicon be infiltrated throughout the substrate wetting and reacting with all of the elemental non-diamond carbon therein, the elemental non-diamond carbon substrate should have a density not exceeding 0.96 g/cc so that there is no distortion of the resulting compositt by the volume of the silicon carbide formed in situ. In this instance, the substrate supporting phase is composed of silicon carbide and elemental silicon and may have the appearance of a silicon cemented silicon carbide or a r action bonded silicon carbide which would always contain silicon carbide in an amount of at least about 10 by volume of the substrate supporting phase. The thickness of the substrate supporting phase of the composite can vary depending on the final application of the resulting composite, but it should be at least sufficiently thick to provide adequate support for the polycrystalline body phase integrally bonded therein. For most applications, to insure satisfactory support, the substrate supporting phase has a thickness at least about twice the thickness of the polycrystalline body phase. The present infiltration is carried out at a temperature above 14000C at which silicon becomes fluid and which has no significant deleterious effect on the crystals For cubic boron nitride crystals infiltration temepratures significantly higher than about 14500C are not useful since they are likely to cause conversion to hexagonal boron nitride. On the other hand, the diamond crystals, temperatures higher than about 15500C provide no significant advantage. By a temperature at which silicon becomes fluid it is meant herein a temeprature at which the silicon is readily flowable. The fluid silicon is highly mobile and highly reactive with elemental non-diamond carbon, i.e., it has an affinity for elemental non-diamond carbon, wetting it and reacting with it to form silicon carbide. Specifically, when silicon is at its melting temperature, which has ben given in the art to range from about 14120C to about 1430C, it has a high viscosity, but as its temperature is raised, it becomes less viscous and at a temperature about ten degrees higher than its melting point; it becomes fluid. The temperature at which the silicon is fluid is the temperature at which it will infuse or infiltrate througi the capillary-size passages, interstices or voids of the shaped mixture or mass of crystals and elemental non-diallìond carbon. With increase in temperature, the flowability ot the fluid silicon increases resulting in a faster rate ol react ion In the present process sufficient si3icc,n is infiltrated throughout the shaped crystal-containing mass of the preform, i.e. shaped mixture of crystals and elemental non-diamond carbon, infusing or infiltrating through the voids or pores of the mixture by capillary action to react with all of the elemental non-diamond carbon present in the shaped mixture forming silicon carbide, and also to fill any pores or voids which may remain after formation of the silicon carbide producing an integral, strongly bonded and at least substantially pore-free polycrystalline body. Specifically, silicon carbide occupies more volume than elemental non-diamond carbon thereby reducing porosity, and any pores remaining after formation of silicon carbide are filled during infiltration with elemental silicon. Also, during infiltration the silicon reacts with the elemental non-diamond carbon coating on the surfaces of the crystals forming a protective adherent coating of silicon carbide on the surfaces and causing no loss or no significant loss of crystal and no change or no significant change in the shape and dimensions of the crystals. Also, sufficient silicon is infiltrated through the interface of the preform filling any pores or voids tnerein wetting and reacting with the contacting surface of the substrate and substrate surface exposed to-the interface; this can form silicon carbide in situ so that the resulting composite has an integral bond that is pore-free or at least substantially pore-free comprised of elemental silicon aiid silicon carbide. Also, in the present process, and depending on th( porosity of the non-diamond elemental carbon substrate, silicon can be infiltrated through the substrate to the extent desired forming silicon carbide in situ and fillix pores with elemental silicon. The resulting infiltrated preform or composite is cooled in an atmosphere which has no significant deleterious effect on it, preferably it is furnace cooled in the partial vacuum to about room temperature, and the resulting composite is recovered. The period of time reuired for infiltration by the silicon is determinable empirically and depends largely on the size of the preform and extent of infiltration of the substrate required, and frequently, infiltration by the fluid silicon through the mold-confined preform is completed within about 15 or 20 minutes. A number of techniques can be used to determine the extent to which silicon has infiltrated. For example, the mold can be cooled to room temperature, opened and the extent of silicon infiltration observed. In another technique the composition of the final polycrystalline body phase of the composite can be determined from the weight, porosity, amount of elemental non-diamond carbon and amount of crystals of the shaped mixture of the preform comprised of the crystals and elemental non-diamond carbon. Specifically, the content of silicon carbide and elemental silicon in the polycrystalline body phase of the composite can be calculated from the amount of elemental nondiamond carbon in the shaped mixture, i.e., the porosity remaining after silicon carbide reaction is completed will be volume occupied by elemental silicon. The weight of the final polycrystalline body phase of the composite is the total, or approximately the total, of the weight of its known crystal content, its silicon carbide content and its elemental silicon content. Also, knowing the weight of the preform before it is infiltrated, any gain in weight by the preform during infiltration can be used to determine the extent of infiltration. In the composite of this invention the polycrystalline body phase is comprised of crystals selected from the group consisting of diamond, cubic boron nitride and combinatins thereof adherently bonded together by a bonding medium comprised of silicon carbide and elemental silicon, said crystals ranging in size from submicron to about 2000 microns, the density of said crystals ranging from about lao by volume up to about but less than 80a by volume of said body pha; ;-, frequently up to about 75% by volume of said body phase, said bonding medium being present in an amount ranging up to about 99% by volume of said body phase, s-aid bonding medium being distributed at least substantially uniformly throughout said polycrystalline body phase, the portion or surface of said bonding medium in direct contact with the surfaces of the bonded crystals being silicon carbide. The present polycrystalline body phase is pore-free or at least substantially pore-free. The amount of silicon carbide in the present polycrystalline body phase of the composite depends on the amount of elemental non-diamond carbon in theshaped mixture before it is infiltrated, and this.is illustrated by the following equation: Si + C + SiC. On the other hand, the amount of elemental silicon in the polycrystalline body phase depends on the porosity or pores remaining after the-total amount of elemental non-diamond carbon is reacted to form silicon. carbide. However, the present polycrystalline body phase always contains silicon carbide in an amount of at least about 1% by volume of tie polycrystalline body phase and elemental silicon in an amount of at least about 1% by volume of the polycrystalline body phase. The present polycrystalline body phase of the composite usually is free of elemental non-diamond carbon phase. However, it may contain non-diamond elemental carbon phase in an amount ranging up to about 5% by volume of the polycrystalline body phase provided such non-diamond elemental carbon phase is sufficiontly distributed throughout the polycrystalline body phase so ae not to have any significant deleterious effect on its mechan-icÅal properties. The presence of the elemental non-diamond carbon phase is detectable by standard metallographic techniques sudh às-, for example, by optically examining a polished cross-section of the poly@ry- stalline body phase or by transmission electron microsco."y on a thin section of the polycrystalline body phase or tornponent. The present polycrystalline body phase of the composite is void or pore-free or at least substantially pore-free, i.e., it may contain voids or pores in an amount less than about 5 by volume of the polycrystalline body phase depending on its particular application providing such voids or pores are small, preferably less than 1 micron, and sufficiently uniformly distributed throughout the polycrystalline body phase so that they have no significantly deteriorating effect on its mechanical properties. The void or pore content of the present polycrystalline body phase is determinable by standard metallographic technique such as, for example, optically examining a polished crosssect ion of the body. In the present composite, the integral bond between the polycrystalline body phase and the substrate! supporting phase is part of the structure of the composite and is not seen as an independent distinct phase. Specifically, it is the transition or border area between the polycrystalline body phase and the substrate supporting phase and appears as that portion of the bonding medium of the polycrystalline body phase in contact with the substrate supporting phase. Such integral bond has the same or substantially the same composition and properties as the bonding medium of the polycrystalline body phase of the composite. Specifically, it is comprised of elemental silicon and silicon carbide and it is free or substantially free of elemental non-diamond carbon phase, i.e., it is free of Dzìy elemental non-diamond carbon phase which may have any significant deleterious effect on its bonding properties. Also, it is pore-free or at least substantially pore-fre, i.e., it may contain voids or pores which are small, preferably less than 1 micron, and sufficiently uniformly distribut(d in an amount which has no significant deleterious effect on Its bonding properties. The void or pore content as well as xhe content of elemental non-diamond carbon phase in the are: ,.r the composite where the integral bond is present is determinable by standard metallographic techniques such for example, optically examining a cross section oL the composite under high magnification. One particular advantage of this invention is that the present polycrystalline body phase and composite can be produced directly in a wide range of si7es and shapes which heretofore could not be manufactured or required expensive and tedious machining because of the very nature of the material. For example, the present polycrystalline body phase and composite can be as long as several centimeters, or as long as desired, and be of very complex geometry, and specifically, it can be produced in the form of a tube or a hollow cylinder, a ring, a sphere or a bar having a sharp point at one end Also, since the present polycrystalline body is produced in a predetermined configuration of predetermined dimensions, ir requires little or no machining. The present composte is useful as a tool insert which, for example, can be held by a tool shank adapted to be held in a machine tool whereby the exposed surface of the polycrystalline body phase can be used for direct machining. Since the use of diamond or cubic boron nitride particles is limited by scarcity and high cost, the present invention is particularly useful in -applications requiring large surface areas of hard materials. Specifically, it allows the use of a small quantity of diamond or cubic boron nitride particles, crystals or dust to be formed into a hard layer or coating integrally bonded to a substrate producing a structually useful hardware piece for applications where surface wear resistance is necessary. Also, the present invention allows the use of a monolayer of crystals of diamond, cubic boron nitride or mixtures thereof to be formed into a hard layer or coating integrally bonded to a substrate, .tud specifically, the resulting composite would have a polycrystalline body phase as thin as the monolayer of crystals or dust integrally bonded to the substrate supporting phase. The term, crystals, herein includes dust. The present @omposite is particularly ase@ul because of its thermal stability and inertness. Specifically, when the substrate supporting phase of the composite is comprised of elemental silicon and silicon carbide, or preformed silicon carbide, such composite is thermally stable in air up to the melting point of silicon, i.e., above l40O0C. Alternatively, when the substrate supporting phase contains or is comprised of elemental non-diamond carbon, the present composite is thermally stable up to the metling point of elemental silicon in atmospheres which do not have a significantly deleterious effect on such elemental nondiamond carbon. Also, corrosive chemicals, oils and greases and similar materials have no significant deleterious efiect on the present composite, which makes it particularly useful in applications which require exposure to such materials In addition, diamond has an affinity for greases which makes the present composite useful as a seal or bearing in motors. The invention is further illustrated by the following examples where, unless otherwise stated, the procedure was as follows: Commercially pure silicon was used for infiltration. The "lon 828"(R) used is a resin formed from the reaction of epichlorohydrin and Bisphenol A, which is a liquid at room temperature and which has an epoxide equivalent of 185-192. Epon 828 decomposes completely below 13000C. The curing agent used was diethylenetriamine, a liquid comnionly called DTA which cures Epon 828 at room temperature thereby solidifying it. In each Example, the given crystals were coated with a very thin coating of pyrolitic carbon deposited b the decomposition of natural gas. Specifically, for thick coating procedure, the crystals were spread out in a graphite crucible and placed in a graphite furnace which was a vacuum bell jar. The furnace was evacuated down to 0.00 torr and heated to 12000C. Methane from a natural gas line w-" admitted into the furnace maintained at a pressure of 50 torr for about five minutes. The furnace was then shut off all the crystals were furnace-c@@led to temperatur@ in the 0.003 torr vacuum. Th(? crystals were then re-spread in the crucible, returned to the furnace and the coating pr@cedure was repeated to insure a complete coating of the crystals. Examination of the coated crystals showed them to have a continuous, coherent, very adherence coating of elemental non-diamond carbon, i.e. over 99% by volume of the crystals were separated from each other by the carbbn coating, and none of the surfaces of the crystals were exposed. Since the deposited coating of elemental non-diamond carbon on the crystals was very thin, i.e., it ranged in thickness from about 500 Angstroms to about 1000 Angstroms, it did not ;rdd to the weight of the crystals significantly, and therefore, the given weight of the starting crystals in each Example is that of these carbon-coated crystals. Examination in each Example of the composite as well as unpolished or polished surfaces of the composite was made optically under a microscope. Since the amount of diamond and/or cubic boron nitride crystals remained the same or did not change significantly from that in the preform, the volume fraction of crystal in the polycrystalline body phase of the resulting composite was calculated and also was based on the appearance of the p',ly- crystalline body phase of the composite. The volume fraction of silicon carbide in the polycrystalline body phase of the composite was calculated based only on the amount of elemental non-diamond carbon added to form the crstal-containing shaped mixture of the preform, since in all of these examples the amount of elemental non-diamond carbon deposited as coating on the diamond or cubic boron nitride crystals and that produceti from 'Epon @28" resin was not significant. Tht' volu@@ fraction of elemental silicon in the poly@rystalline body phase of the composite was calculated and also was based @n the p@re-@ree or su@@ta@@@ally po@ -free appearance of the polycryst.'tJline body phase of the composite of each example. The composition of the substrate phase of the composite of Examples 1-4 which follow was determined on the basis of elemental non-diamond carbon present therein, other than that produced from "Epon 828" resin, before infiltration, since the amount of elemental non-diamond carbon produced from Epon 828 was not significant, the extent to which such substrate was infiltrated and reacted with elemental silicon, and on its appearance. EXAMPLE I An equilateral triangular piece of graphite, sold under the trademark Speer 580, 2.54 mm thick and 15.9 mm in length on each side, was used as a substrate. The graphite substrate had flat triangular surfaces, and a density of 1.7 g/cc which is equivalent to a porosity of about 20 by volume. The pores, i.e., porosity, in the substrate were very small, submicron in size, and were a mixture of non-interconnecting and interconnecting pores. At room temperatures, DTA curing agent was mixed with 0.01 gram of Epon 828 resin in an amount of 10 by weight of the Epon 828, and this mixture was then admixed with 0.17 gram of 210/230 mesh (equivalent to 74/62 microns) carbon-coated diamond crystals and 0.02 gram crushed carbon cloth to form a uniform mixture. The resulting crystal-containing mixture was spread on one of the flat triangular surfaces of the graphite substrate forming a continuous coating thereon. The resulting preform was placed in a 1000C oven for 1 hfur to cure, i.e. harden, the Epon 828. The resulting cured crystal-containing layer of the preform had a thickness of X 0.635 mm. The preform, which was held together by the cured resin, was fitted into a graphite mold, wherein all of tlle surfaces had been sprayed with hexagonal boron nitride. The associated structure or apparatus for carrying out the silicon infiltration was similar to that shown in Figure 1. Specifically, a solid graphite cylinder was used with a cavity drilled into its upper end portion for hol ding silicon and a cavity drilled in its lower end portion for use as a mold cavity. The mold cavity was drilled to approximately correspond to the shape and dimensions of the preform. Two infiltration holes, about 1.3 mm in diameter, were drilled substantially perpendicularly between the two cavities connecting them. The preform was placed within the mold cavity with the exposed flat triangular surface of the substrate portion of the preform facing the upper cavity. Any free space remaining in the mold cavity was filled with hexagonal boron nitride powder. A wick of elemental non-diamond carbon fiber, about 12.7 mm long and about 1 mm in diameter,was positioned within each infiltration hole to extend into the upper cavity, but to be just in ccntact with the surface of the substrate portion of the preform in the mold cavity. The mold cavity was then closed with a graphite plate forming a mold which was not air tight and therefore could be ventilated without a vent hole. The graphite plate was held in place by carbon filament or graphite bars. 0.4 g of granular elemental silicon was placed in the upper cavity. The resulting associated structure was placed in a graphite vacuum furnace which was evacuated to about 0.1 torr and maintained at about 0.1 torr during silicon infiltration and subsequent furnace-cooling to room temperature. The residual gases in the furnace were non-oxidizing. The furnace was heated to about 15000C and maintained at such temperature for 10 minutes. The power was then cut off and the structure was furnace-cooled to room temperature. The amount of infiltrating silicon was sufficient to completely infiltrate through the resulting coating of crystals and elemental non-diamond carbon, and its interface with the substrate, and completion of the silicon infiltration in the given tirae was based on experience alid results with similar runs. The resulting composite was recovered from the mold without sticking. The remains of the infiltration wicks were machined off the substrate phase of the composite. The resulting composite was an integral equilateral triangular piece which had a form, i.e. shape and dimensions, not significantly different from that of the preform. Specifically, the total thickness of the composite was X 3 mm, and the thickness of the polycrystalline coating, i.e. polycrystalline body phase of the composite, X 0.635mm. There was a very thin coating comprised of a mixture of elemental silicon and silicon carbide on the entire external surface of the graphite substrate of the composite. In this coating, the elemental silicon was seen as a shiny grey phase whereas the silicon carbide was seen as a dul3 darkish grey phase. The face of the polycrystalline body phase of the composite was polished on a diamond wheel and appeared to be completely infiltrated with bonding medium which appeared to be uniformly distributed, and the diamond particles appeared to be well bonded. Examination of the polished face showed no strings of holes formed from diamond fragment pullout illustrating the strong bonding therein. There appeared to be no sicnificant loss of diamond crystals and no change or no significant charge in the shape and dimensions of the diamond crystals. In the polished polycrystalline diamond face of the composite, elemental silicon was seen as a shiny grey phase, submicron in size and substantially uniformly distributed, silicon carbide was seen as a dull dark grey phase, and the diamond appeared as smooth individual crystals separated by the bonding medium. A side surface of the composite was polished on a diamond polishing scaife and this surface is shown in figures 2 and 3. The remaining two side surfaces were polished on a diamond wheel. No delamination of the substrate supporting phase occured indicatiny the very strong bonding of the composite. In figure 2 the upper layer with th diamond crystals distributed therein is the polycrystalline body phase and the lower layer is the substrate supporting phase which appears to be comprised of graphite. Figure 2 illustrates that the integral bond formed between the polycrystalline body phase and the substrate supporting phase is part of and within the structure of the composite and does not appear as a separate distinct phase. Specifically, in figures 2 and 3, the integral bond appears as that portion of the bonding medium of the polycrystalline diamond body phase in contact with the substrate supporting phase, and close examination of figures 2 and 3 shows that the integral bond extends into the graphite phase filling pores therein which had been open to the interface of the preform during silicon infiltration. The area along the two phases where the integral bond is present appeared free of any elemental non-diamond carbon phase as well as free of pores which would significantly effect the adherence of the polycrystalline body phase to the substrate supporting phase. Examination of the polished side surfaces of the polycrystalline body phase showed them to be completely infiltrated, and the bonding medium appeared to be uniformly distributed. There appeared to be no loss or no significant loss of diamond crystals and. no change or no significant change in their shape and dimensions. ,Elemental silicon was seen as a shiny phase, submicron in size and substantially uniformly distributed. In addition, all of the polished surfaces of the polycrystalline diamond body phase appeared to be free of elemental carbon phase in sotne areas and at least substantially free of elemental nondiamond phase in other areas. Also, all of the polished surfaces of the composite appeared to be free of pores in some areas and at least substantially free of pores in other areas. It is estimated from optical examination that the infiltrated portion of the composite, which, in this instance is composed almos completely of polycrystalline body phase, had a porosity of approxlmately 1 t by vo3u;ne of the total volume of such infiltrated portion. A close look at figure 3, which is an enlargement of a portion of figure 2, shows the diamond crystals at least enveloped with a dark grey phase, and this dark grey phase which is silicon carbide, is also shown as distributed throughout the diamond bonding medium. The lighter colored phase distributed through the bonding medium of the polycrystalline diamond phase is elemental silicon. The bottom portion of figure 3 shows the graphite substrate supporting phase. Figure 3 also illustrates the integral bond of the composite as being within and part of the structure of the composite, i.e. it appears as the bottom portion of the polycrystalline diamond phase and the top portion of the substrate supporting phase. The polycrystalline body phase of the composite was comprised of about 60 % by volume of diamond crystals, about 20 % by volume of silicon carbide, about 18 % by volume of elemental silicon, about 1 % by volume of elemental non-diamond carbon phase largely of submicron size and had approximately about 1 % by volume of pores largely of submicron size. EXAMPLE 2 In this example a two-step procedure was used, i.e. the substrate was initially prepared by infiltrating a shaped mass of porous elemental non-diamond carbon with silicon in accordance with the present process, such infiltrated substrate was used as a substrate to form the preform, and then silicon infiltration of the crystalcontaining carbonaceous mass and interface of such preform was carried out in accordance with the present process. Specifically, an equilateral triangular substrate was prepared which had the same dimensions set forth in Example 1. This substrate was prepared by admixing crushed carbon cloth and just sufficient Epon-828 resin to hold ine crush cloth together, confining such mixture within a mold and infiltrating the resulting shaped porous elemental non diamond carbon with silicon at about 1DOOOU undcr app,ox r.a- tely 0.1 torr pressure. The resulting triangular substrate was comprised of about 24 % by volume of elemental silicon, about 75 % by volume of silicon carbide, and about 1 t by volume of elemental non-diamond carbon and was substantially free of pores. A diamond crystal-containing mixture was prepared in the same manner and had the same composition as disclosed in example 1. The crystal-containing mixture was spread on one of the flat triangular surfaces of tiie substrate forming a continuous coating thereon. The resulting preform was placed in an 1000C oven for 1 hour to cure the Epon-828. The cured crystal-containing layer of the preform had a thickness of ^ 0.635mm. The preform, which was held together by the cured resin, was fitted into a graphite mold and was infiltrated with silicon in the same manner as disclosed in example 1. The resulting composite was recovered in the same manner as disclosed in example 1. The resulting composite was an integral equilateral triangular piece which has a form i.e. shape and dimensions, not significantly different from that of the preform. Specifically, the total thickness of the composite was% 3 mm, and the thickness of the polycrystalline coating, i.e. polycrystalline body phase of the composite, wasx 0.635 mm. There was a very thin coating comprised of elemental silicon on the entire external surface of the substrate chase of the composite. The face of the oolycrystalline bodv phase and the sides of the composite were polished on a diamond wheel. The polished face appeared to be completely infiltrated with bonding medium which appeared to be uniformly distributed, and the diamond particles appeared to be well bonded. Examination of the polished face showed no strings of holes formed from diamond fragment pullout illustrating the strong bonding therein. There appeared to be no significant loss of diamond crystals and no change or no significant change in the shape and dimensions of the diamond crystals. In tlie polished 1o]';crystalline diarrond face of the composite, elemental silicon was seen as a shiny grey phase1 submicron in size and substantially uniformly distributed, and silicon carbide was seen as a dull dark grey phase, and the diamond appeared as smooth individual crystals separated by the bonding medium. The integral bond formed between the polycrystalline body phase and the substrate supporting phase appeared as part ofand within the structure of the composite and did not appear as a separate distinct phase. Specifically, the composite appeared to be a continuous structure through its thickness and the diamond particles in the polycrystalline body phase distinguished such phrase from the substrate supporting phase. The polycrystalline body phase of the composite was comprised of about 60 % by volume of diamond crystals, about 20 %;by volume of silicon carbide, about 18 % by volume of elemental silicon, about 1 % by volume of elemental non-diamond carbon phase largely of submicron size and had approximately about 1 % by volume of pores largely of submicron size. EXAMPLE 3 In this example the procedure used was the same as disclosed in example 1 except that the substrate was comprised of crushed carbon cloth and Epon-828. Specifically, an equilateral triangular substrate was prepared which had the same dimensions set forth in example 1. This substrate was prepared by admixing crushed carbon cloth and just sufficient Epon-828 resin to hold the crushed cloth together. A diamond crystal-containing mixture was prepared in the same manner as disclosed in example 1, and had the same composition disclosed in example 1. The resulting crystal-containing mixture was spread on one of the flat triangular surfaces of the substrate forming a continuous coating thereon. The resulting preform was placed in an 1000C oven for 1 hour to cure the Epon-828. The resulting cured crystal-containing layer of the preform had a thickness of 0.635 mm. The preform, which was held together by the cured resin, was fitted ino a graphite mold and was infiltrated with elemental silicon in the same manner and under the same conditions as disclosed in example 1, except that the silicon was infiltrate ted throuyhout the elemental non-diamond carbon of the substrate. In this example, 1.4 g of silicon were used, and the amount of infiltrating silicon was sufficient to completely infiltrate through the resulting coating of crystals and elemental non-diamond carbon, and its interface and throughout the substrate, and such silicon infiltration was completed in 10 minutes. The resulting composite was recovered in the same manner as disclosed in example 1. The resulting composite was an integral equilateral triangular piece which had a form, i.e. shape and dimensions, not significantly diffe- rent from that of the preform. Specifically, the total thickness of the composite was X 3 mm, and the thickness of the polycrystalline diamond coating, i.e. polycrystalline body phase of the composite, was X 0.635 mm. There was a very thin coating comprised of a mixture of elemental silicon and silicon carbide on the entire external surface of the substrate phase of the composite. In this coating, the elemental silicon was seen as a shiny grey phase whereas the silicon carbide was seen as a dull darkish grey phase. The face of the polycrystalline body phase and the sides of the composite were polished on a diamond wheel. The polished face appeared to be completely infiltrated with bonding medium which appeared to be uniformly distributed and the diamond particles appeared to be well bonded. Examination of the polished face showed no strings of holes formed from diamond fragment pullout illustrating the strong bonding therein. There appeared to be no significant loss of diamond crystals and no change or no significant change in the shape and dimensions of the diamond crystals. In the polished polycrystalline diamond face of the composite, elemental silicon was seen as a shiny grey phase, sublai- cron in size and substantially uniformly distributed. sili con carbide was seen as a dull dark qrev phase and the diamond asDcared as smooth individual crvstals separated bv the bondinq medium. The inteqral bond formed between the polycrystalline body phase and the substrate supporting phase appeared as part of and within the structure of the composite and did not appear as a separate distinct phase. Specifically, the composite appeared to be a continuous structure through its thickness and the diamond particles in the polycrystalline body phase distinguished such phase from the substrate supporting phase. The polycrystalline body phase of the composite was comprised of about 60 % by volume of diamond crystals, about 20 % volume of silicon carbide, about 18 % by volume of elemental silicon, about 1 % by volume of elemental non-diamond carbon phase largely of submicron size and had approximately about 1 % by volume of pores largely of submicron size. The substrate supporting phase was comprised of about 24 % by volume of elemental silicon, about 75 % by volume of silicon carbide, about 1 % by volume of elemental non-diamond carbon, and was substantially free of pores. EXIPLE 4 In this example the procedure and materials used were the same as disclosed in example 3 except that cubic boron nitride crystals were used instead of diamond crystals and the silicon infiltration temperature was 14500C herein. The cubic boron nitride crystals used had the same size as the diamond crystals as example 1. The resultinq composite was an inteqral equilateral triangular piece which had a form, i.e. shape and dimensions, not significantly different from that of the preform. Specifically, t-he total thickness of the composite was X 3 mm, and the thickness of the polycrystalline cubic boron nitride coating, i.e. polycrystalline body phase of the composite, was X 0.635 mm. There was a very thin coating comprised of a mixture of elemental silicon and silicon carbide on the entire external surface of the substrate phase of the composite. In this coating, the elemental silicon was seei as a shiny grey phase whereas the silicon carbide was seen as a dull darkish grey phase. The face of the polycrystalline cubic boron nitride body phase and the sides of the composite were polished on a diamond wheel. The polished face appeared to be completely infiltrated with bonding medium which appeared to be uniformly distributed and the cubic boron nitride particles appeared to be well bonded. Examination of the polished face showed no strings of holes formed from cubic boron nitride fragment pullout illustrating the strong bonding therein. There appeared to be no significant loss of cubic boron nitride crystals and no change or no significant change in the shape and dimensions of the cubic boron nitride crystals. In the polished polycrystalline cubic boron nitride face of the composite, elemental silicon was seen as a shiny grey phase, submicron in size and substantially uniformly distributed, silicon carbide was seen as a dull dark grey phase, and the diamond appeared as smooth individual crystals separated by the bonding medium. The integral bond formed between the polycrystalline body phase and the substrate supporting phase appeared as part of and within the structure of the composite and did not appear as a separate distinct phase. Specifically, the composite appeared to be a continous structure through its thickness and the cubic boron nitride crystals in the polycrystalline body phase distinguished such phase from the substrate supporting phase. This composite had the same composition as the composite produced and disclosed in example 3 except that it contained cubic boron nitride crystals instead of diamond. LXAMPLE 5 - SiC Substrate The preformed silicon carbide substrate was a polycrystalline silicon carbide body sold under the trademark NC2O±' produced by hot-pressing particulate silicon carbide and densification additive and contained silicon carbide in excess of 90 % by weight. An equilateral triangular piece of the silicon carbide substrate, 0.54 mm thick and 15.9 mm in length on each side, was used. The substrate had flat triangular surfaces. t room temperature, DTA curing agent was mixed with 0.01 g of Epon 828 resin in an amount of 10 % by weight of the on 828, and this mixture was then admixed with 0.17 y of 210/230 mesh (equivalent to 74/62 microns) carbon-coate diamond crystals and 0.02 @ crushed carbon cloth to form a uniform mixture. The resultinq crvstal-containinq mixture was spread on one of the flat triangular surfaces of the silicon carbide substrate forming a continous coating thereon. The resultinq preform was placed in a 100 C oven for 1 hour to cure, i.e. harden, the tpon 828. The resuiting cured crystal-containing layer of the preform had a thickness of X 0.635 mm. The preform, which was held together by the cured resin, was fitted into a graphite mold, wherein all of the surfaces had been sprayed with hexagonal boron nitride. The associated structure or apparatus for carrying out the silicon infiltration was similar to that shown in figure 1. Specifically, a solid graphite cylinder was used with a cavity drilled into its uppe@ 2nd portion for holding silicon and a cavity drilled in its lower end portion for use as a mold cavity. The mold cavity was filled to approximately correspond to the shap@ and dimensions of the preform. The infiltration holes, about 50 mils in diameter, were drilled substantially perpendicularly between the two cavities connecting them. The preform was placed within the ri,id cavity with the exposed flat triangular surfaces of the substrate portion of the preform facing the upper cavity. Any free space remaining in the mold cavity was filled with hexagonal boron nitride powder. A wick of elemental non-diamond carbon fiber, about 12.7 mm long and about 1 un in diameter, was positioned within each infiltration hole to extend into the upper cavity, but to be just in contact with the surface of the substrate portion of the preform in the mold cavity. The mold cavity was then closed with a graphite plate forming a mold which was not air tight and therefore could be ventilated without a vent hole. The graphite plate was held in place by carbon filament or graphite bars. 0.4 g of granular elemental silicon was placed in the upper cavity. The resulting associated structure was placed in a graphite vacuum furnace which was evacuated to about 0.1 torr and maintained at about 0.1 torr during silicon infiltration and subsequent furnace-cooling to room temperature. The residual gases in the furnace were nonoxidizing. The furnace was heated to about 15000C and maintained at such temperature for 10 minutes. The power was then cut off and the structure was furnacecooled to room temperature. The amount of infiltrating silicon was sufficient to completely infiltrate through the resulting mixture of crystals and elemental non-ciamond carbon, and its interface with the substrate, and completion of the silicon infiltration in the given time was based on experience and results with similar runs. The resulting composite was recovered from the mold without sticking. The remains of the infiltration wicks were machined off the substrate component of the composite. The resulting composite was an inteqral equilateral triangula"r piece which had a form, i.e. shape and dimensions, not significantly different from that of the preform. Specifically, the total thickness of the composite was X 3 mm, and the thickness of the polycrystalline diamond coating, i.e. polycrystalline diamond body component of the composite was X 0.635 mm. Examination of the polished surfaces of the composite was made optically under a microscope. The face of the polycrystalline diamond body component of the composite was polished on a diamond wheel and appeared to be completely infiltrated with bonding medium which appeared to be uniformly distributed, and the diamond particles appeared to be well bonded. Examination of the polished face showed no strings of holes formed from diamond fragment pullout illustrating the strong bonding therein. There appeared to be no significant loss of diamond crystals and no change or no significant change in the shape and dimensions of the diamond crystals. In the polished polycrystalline diamond face of the composite, elemental silicon was seen as a shiny grey phase a submicron in size and substantially uniformly distributed, silicon carbide was seen as a dull dark grey phase, and the diamond appeared as smooth individual crystals separared by the'bonding medium. A side surface of the composite was polished on a diamond polishing scaife and this surface is shown in figure 2. The remaining two side surfaces were polished on a diamond wheel. No delamination of the silicon carbide substrate occured indicating the very strong bonding of the composite. In Figure 4 the upper layer with the diamond crystals distributed therein is the polycrystalline diamond body componen and the lower layer is the supporting silicon carbide substrate. Figure 4 illustrates that the integral bond formed between the polycrystalline body component and the supporting silicon carbide component is part of and within the structure of t)!: composite and does not appear as a separAte distinct phase. Specifically, in Figure 4, the integral bond appears as that portion of the bonding medium of the polycrystalline diamond body component in contact with the supporting silicon carbide substrate component. The area along the two components where the integral bond is present appears free of any elemental non-diamond carbon phase as well as free of pores which would significantly effect the adherence of the polycrystalline body component to the supporting silicon carbide substrate. Examination of the polished side surfaces of the polycrystalline body component showed them to be completely infiltrated, and the bonding medium appeared to be uniformly distributed. There appeared to be no loss or no significant loss of diamond crystals and no change or no significant change in their shape and dimentisons. Elemental silicon was seen as a shiny phase, submicron in size and substantIally uniformly distributed. In addition, all of the polished surfaces of the polycrystalline diamond body component appeared to be free of elemental carbon phase in some areas and at least substantially free-of elemental non-diamond carbon phase in other areas. Also, all of the polished surfaces of the composite appeared to be free of pores in some areas and at least substantailly free of proes in other areas. It is estimated fJom optical examination that the infiltrated portion of the composite had a porosity of approximately 1% by volume of the total volume of such infiltrated portion. A close look at Figure 4, shows the diamond crystals at least enveloped with a dark grey phase, and this darl: grey phase which is silicon carbide, is also shown as distrilXuted through-the diamond bonding medium. The lighter colored! phas distributed through the bonding medium of the polycrystalline diamond phase is elemental silicon. The polycrystalline diamond body component of the composite was comprised of about 60 by volume of diamond crystals, about 205 by volume of silicon carbide, about 18; by volume of elemental silicon, about 1% by volume of elemental non-diamond carbon phase largely of submicron size and had approximately about 1% by volume of pores largely of submicron size. The composites prepared in these Exampales are useful as wear-resistant surfaces such as a cutting or bearing surface.

Claims: CLAIMS : 1. Self-supporting composite characterized in that it comprises a polycrystalline boat phase integrally bonded to a substrate supporting phase, said polycrystalline body phase being comprised of crystals selected from the group consisting of diamond, cubic boron nitride and mixtures thereof adherently bonded together by a bonding medium comprised of silicon carbide and elemental silicon wherein the volume of said silicon carbide and said silicon each is at least about 1% by volume of said polycrystalline body phase, said crystals ranging in size from submicron up to about 2000 microns, the volume of said crystals ranging from about 1% by volume to about less than 80, by volume of said polycrystalline body phase, said bonding medium being present in an mount rang ing up to about 99% by volume of said polycrystalline body phase, said bonding medium being distributed at least sub stantially uniformly throughout said polycrystalline body phase, the portion of said bonding medium in contact with the surface of said crystals being silicon carbide, said polycrystalline body phase being at least substantially pore-free, said substrate supporting phase being comprised of elemental non-diamond carbon; or silicon carbide and silicon; or silicon carbide, silicon or elemental nondiamond carbon; or preformed silicon carbide. 2. The self-supporting composite according to claim 1, characterized in that said substrate sunortina phase is graphite. 3. The self-supporting composite according to claim 2 characterized in that the crystal content of said polycrystalline body phase is substantially in the form of a monolayer and the thickness of said polycrystalline body phase is substantially the thickness of the monolayer of crystals. 4. The self-supporting composite according to claim 3 characterized in that said polycrystalline body phase is inte grally bonded to a second polycrystalline body phase, said polycrystalline body phases differing from each other in said content of said crystals. 5 The self-supporting composite according to claim 1 characterizei in Csat said substrate suLDpDortiny phase contains said silicon carbide in an amount of at least about 10% by volume of said substrate supporting phase. 6. A process for producing a composite of predetermined shape ana size as claimed in claim 1 characterized in that it comprises providing a crystal-containing carbonaceous mass composed of at least a substantially uniform mixture of diamond and/or cubic boron nitride crystals and a carbonaceous material wherein none of the surfaces of said crystals are exposed significantly and wherein at least a substantial amount of said crystals are enveloped and separated from each other by at least a coherent continuous coating of said carbonaceous materials on said crystal-s, said carbonaceous mater- ial being selected from the group consisting of elemental non-diamond carbon, an organic material, and mixtures thereof, said organic material being present in an amount sufficient on decomposition to produce on the crystal surfaces it coats at least a coherent continuous coating of elemental non-diamond carbon, providing a carbonaceous substrate consisting essentially of elemental non-diamond carbon, a solid organic substrate material, and mixtures thereof, providing a mold with a cavity of desired size and shape and means for introducing fluid silicon into said cavity and means for maintaining a partial vacuum in said cavity, filling said cavity with a preform comprised of said crystal-containing carbonaceous mass in contact with said carbonaceous substrate forming an interface therewith and confining said preform therein, said preform being the form desired of said composite, said organic material and said solid organic substrate material decomposing at a temperature below 1400 C to elemental non-diamond carbon and gaseous product of decomposition and being present in an amount sufficient which on dcomposition produces at least sufficient elemental non-diamond carbon to maintain said preform, associating said filled cavity with a mass of silicon, providing the resulting associated structure with a partial vacuum wherein the residual gases have no significant deleterious effect on said associated structure, heating said associated structure in said partial vacuum to a temperature above 14000C at which said silicon is fluid and which does not have a significantly deleterious effect on said crystal: and infiltrating said fluid silicon into said preform at least through said crystal-containing carbonaceous mass and at. least into contact with the contacting surface of said substrate filling the pores through said interface so that it is at least substantially pore-free, said partial vacuum being at least sufficient to remove gas from said preform which blocks said infiltrating fluid silicon, said infi7t- rating silicon reacting with non-diamond elemental carbon forming silicon carbide, cooling the resulting qomposit in an atmosphere which has no significant deleterious effect on it, recovering the resulting composite of polycrystallie body phase bonded to substrate supporting phase, said p > ly- crystalline body phase being substantially pore-free wherein the crystals ranging from about 1% by volume up to about but less than 80 by volume of the total volume of said pol'- crystalline body phase are bonded together by a bonding medium comprised of silicon carbide and elemental silicon. 7. The process of claim 1 characterized in that said silicon infiltrates said substrate. 8. The process of claim 1 characterized in thnt said substrate is graphite. The process of claim 6,-characterized in thIt in place of said carbonaceous substrate, there is provided a preformed substrate of silicon carbide.

Inventors: MORELOCK, CHARLES ROBERT
Applicants: GENERAL ELECTRIC COMPANY
Application year: 1979
Main classification: C04B35
IPC codes: B32B18, C04B35, B24D3