CHARGE-COUPLED DEVICE

Abstract: A non-voltatile charge-coupled device comprises, bet­ ween a semiconductor substrate (1) of one conductivity type and an insulating layer (3), a sequence of first and second regions (2a and 2b). Each of the first regions (2a) has the same conductivity type as the semiconductor substrate (1) and each of the second regions (2b) has the opposite conductivity type and acts as a charge-storage region, the first regions acting as barrier regions isolating each storage region from the neigh­ bouring storage regions. Electrodes (4,5) are alternately con­ nected to driving connections (Ø1, Ø2), each electrode cover­ ing one first region and an adjacent second region.

Description: CHARGE-COUPLED¯DEVICE This invention relates to a char(3c-coupled device more particularly to a charge-coupled device of nonvolatif type. A charge-coupled device (CCD) of this invention can effectively be applied to devices such as image sensors, shift registers, memories, etc.. In general, a charge-coupled device consists basically of a semiconductor substrate, an insulating layer covering the substrate, and a plurality of electrodes arranged on the insulating layer for transferring carriers, If the semiconductor substrate is of p-type material, a positive voltage on an electrode creates a depression layer and then a potential well is created near the surface of the semiconductor under the insulating layer for storing minority carriers, i.e., electrons, which represent information. (ten the positive voltage is shifted to an adjacent electrode, the stored information moves correspondingly. In the prior art, various CCD have been developed in order to improve the charge-transfer efficiency and to simplify the electrode-structure (see, for example, the article by R.H. Krambeck, R.H. Walden and K.A. Picker, "Implanted-Barrier Two-Phase Charge-Coupled Device", in Applied Physics Letters, Volume 19, No. 12, 1971 and the article by W.F. Kosonockyland J.G. Carnes, "Charge-Coupled Digital Circuits" in ISSCC 71/ Friday, February, 1971 p.p 162 to 163). However, these CCD of the prior art have a disadvantage of volatility with respect to carriers which represent information. That is, when power applied to an electrode is turned off, the depression region and thus the potential well under the electrode in the substrate immediately vanishes and the carriers stored in the potential well are diffused through the substrate. Therefore, the CCD of the prior art cannot be used as de 5 vices which require nonvolatile storage of information even when the clock pulse applied to the electrode is instantaneously stopped due to instantaneous power failure or noise. Nonvolatile CCD were proposed by the applicant of 5 the present invention prior to this application. In one of the known nonvo ] atile CCD (Japanese Patent Application No. 53-88874 filed on July 20, 1978), a plurality of storage regions are provided each of which is adjacent to one of the channel regions under the electrodes. These storage regions are diffusion regions having a conductivity opposite to that of the semiconductor substrate and are isolated from the circumferential material so as to be in a floating state. Each storage region for storing one bit of information is related to an adjacent channel region for storing one bit of info mation in a one-one correspondence. With this CCD, even if a clock pulse to be applied to an electrode for transferring carriers is not applied due to instantaneous power failure or noise, the carriers being transferred through the channel region under the electrode will be stored in the adjacent storage region for a certain time determined by both the anount of the stored carriers and the leakage current. Because each storage region should be provided adjacent to one of the channel regions, and each channel region, which is formed under one of the electrodes when a clock pulse is applied thereto, can not be reduced, the CCD of this type has a larger total area than the volatile CCD because of the size of the newly provided storage regions. Thus, it is inevitable that the degree of integration will be reduced with this nonvolatile CCD. Another nonvolatile CCD prior to this invention was also proposed (Japanese Patent Application No. 53-91370 filed on July 26, 1978), in which the structure of electrodes was improved. In this CCD, sides the electrodes on the insulating layer for transferring carriers through channel regions which were formed near the surface of the semiconductor substrate under these electrodes, other electrodes for forming storage regions were provided. Each of ##ie storage-ref3ion fonriing electrodes is adjacent to oro of the channel-region forming electrodes. Therefore, of the storage regions is adjacent to one of the channel regions. With this CCD, when a clock pulse to be applied ic an electrode for transferring carriers is not applied du to instantaneous power failure or noise, another clock pulse for forming a storage region is applied to the storage-region forming electrode adjacent to the electrode for forming the channel region, whereby, a potential wall is s created near the surface of the semiconductor substrate under the storage-region forming electrode. Thus, the carriers being transferred through the channel are stored n the potential well. The voltage applied to the electrodes for forming storage regions may be an appropriate level of D.C. voltage alternative to the clock pulse. However, this second type of known nonvolatile CCD also requires a new area for storing carriers so that the degree of integration is reduced. In addition, since this CCD is a Surfaçc-channel CCD (SCCD), that is, since the storage regions and the channel regions are formed near the surface of the semiconductor substrate, the carriers are affected by the surface states causing the storage time to reduce. Further, tis CCD requires additional power supply for providing clock pulses or a constant voltage to form the storage regions other than the power supply for providing clock pulses for transferring carriers, which results in à high flanufacturing cost and high power consumption. Thus, the above rentiolled two types of nonvolatile CCD are not 5 sufficient in view of the degree of integrdtion, storag time, manufacturing cost, or power consumption. A charge-coupled device according to the present invention for transferring carriers comprises a semic(#nductor substrate of one conducting type, an insulating layer covering the sicoductor substrate, and a plurality of electrodes arranged on the insulating layer, the carriers being transferred by applying multi-ph < e driving pulses to said electrodes, characteri7ed in that between the semiconductor substrate and the insulating layer there are arranged, in a sequence in the direction of carrier transfer, first regions of the same conductivity type as the semiconductor substrate and second regions of the opposite conductivity type, each pair of the said first and second regions being arranged to be sub staritially covered by one of the e#ectrodes, each of the first regions acting as a barrier region and each of the second regions acting as a storage region and being electrically isolated from the adjacent storage regions. The invention also consists in a method of manufacturing such a charge-coupled device. A charge-coupled device embodying the invention has a relatively long storage time and this is obtained without reducing the degree of integration and without requiring an additional power supply for forming the storage regions In order that the invention may be better understood, an example of a charge-coupled device embodying the invention will now be described with reference to the accompanying drawings, in which: : Fig. (a) illustrates a cross sectional view of the nonvolatile CCD along the carrier-transfer direction, according to one embodiment of the present invention; Fig. (b) is a graphic diagram illustrating the potential distribution in the CCD of Fig. (a) before any clock pulse is applied; Fig. (c) is a graphic diagram illustrating the potential distribution in the CCD of Fig. (a) when a clock pulse is applied to one of the electrodes; Fig. (d) is a graphic diagram illustrating the potential distribution in the CCD of Fig. (a) when another clock pulse is applied to another electrode; and, Fig. (e) is a graphic diagram illustrating the potential distribution and information storage in the CCD of Fig. (a) upon power failure. Referring to Fig. (a), the steps of manufacturing a nonvolatile CCD according to one embodiment of the present invention are as follows. At first, on a semiconductor substrate 1 of p-type silicon, according to the invention, an epitaxial layer of the same conducting type is grown. It is preferable that the concentration of the impure material in the epitaxial-growth layer is lower than that in the semiconductor substrate 1. In the figure, the epitaxial-growth layer having lower concentration is represented as "p ". In the second step, impurity islands having opposite conductive type are formed in the epitaxial -growth layer by mans of selective diffusion or selective ion implantation. Thus, as illustrated in Fig.-(a), a semiconductor layer 2 can be obtained which has alternately arranged p -type regions 2a and n-type regions 2b. Each n-type region 2b is completely surrounded by the adjacent two p -type regions 2a and the p-type substrate 1 so that the region 2b is in a floating state or in an electrically isolated state. The third step is to form an insulating layer 3 of silicon dioxide on the above-mentioned semiconductor layer 2. In the fourth step, every other pair of the p -type regions 2a and n-type regions 2b in the semiconductor layer 2 is covered through the insulating layer 3 by an electrode 4 to which first-phase clock pulses are to be applied. At last, after insulating the electrode 4r another electrode 5 is provided to cover, through the insulating layer 3, every other pair adjacent to the above-mentioned pair of p -type and n-type regions. Second-phase clock pulses are to be applied to the electrode 5. Although two types of regions 2a and 2b are provided in the seniconductor layer 2 near the surface of the p-type semiconductor substrate 1, it should be noted that the total size of the thus obtained CCD according to the present enbodinent is not greater than the total size of the prior volatile CCD, because the size of the carrier-transferring electrode 4 or 5 is not greater than the electrode of the prior volatile CCD. The ratio of the p -type area to the n-type area is preferably from 1:1 to 1:2. During the carrier-transferring operation, the p -type regions 2a function as barrier regions and the n-type regions 2b as storage regions. The operation of the nonvolatile CCD of this embodiment is as follows. Figs. (b) through (e) are graphic diagrans of the potential distributions in the CCD of Fig. (a) in various states. In this embodinent, since the carriers to be tranferred through the semiconductor layer 2 are negative charges, in other words, since they are electrons, the potential level in the figures must be understood as the potential level for electrons. When no clock pulse is applied to the electrodes 4 and 5, the potential level at the p -type regions 2a is higher than the potential level at the n-type regions 2b as illustrated in Fig. (b). This potential difference in the semiconductor layer 2 is caused by the p-n junctions between each p -type region 2a and the adjacent n-type region 2b. When no voltage is applied to the electrodes, the potential at all the p -type regions 2a is assumed to be zero volt and the potential at all the n-type regions 2b be VO volts. AfL':: introducing carriers or electrons by irradiation of light or by electrical injection into the semiconductor layer 2, 2 voltage #2 is then applied to the electrodes 5. The potential distribution in the semiconductor layer 2 in tl state is illustrated in Fig. (c). The absolute value of the voltage °2 must be greater than the absolute value of the voltage VO. As can be seen fton Fig. (c), the potential the p -type regions 2a under the electrodes 5 is °2 and the potential at the n-type regions 2b under the electrodes 5 is Vo+°2. Since no voltage is applied to the electrodes 4 during the term when the voltage (2 is applied to the electrode 5, the voltage at the p -type regions 2a and at the n-type regions 2b both under the electrodes 4 are zero and VO volts respectively. Thus, potential wells of step configuration are created as illustrated in Fig. (c). If the carriers are present in the n-type region 2b under the electrode 4(1) as illustrated in Fig. (b), these carriers will then move to the lower potential region and reach the n-type region 2b under the electrode 5(1) which is the lowest potential region. "Then, the voltage applied to the electrodes 4 is turned to °1 volts and the voltage applied to the electrode 5 is turned to zero volt. At this time, the potential at the p-type regions 2a and the n-type regions 2b both under the electrodes 4 & ome °1 volts and fl+Vo volts respectively and the potential of the p-type regions 2a and the n-type regions 2b both under the electrodes 5 become zero volt and V volts respectively. 0 Thus, potential wells of step configuration as illustrated in Fig. (d) are obtained. The carriers in the region 2b under the electrode 5(1) will then be transferred to the region 2b under the electrode 4(2) adjacent to the electrode 5(1). The voltages °1 and #2 may have the same value with a different phase of 1800. By applying the voltage °1 and #2 to the respective electrodes 4 and 5 alternately, the carriers are transferred in the charge-transfer direction (right direction in the figure) through the semiconductor layer 2 under the electrodes 4(1), 5(1), 4(2), ... sequentially. In the course of the above-described charge-transfer process, when the voltages or driving pulses °1 and °2 are not applied to the electrodes 4 and 5 due to power failure or noise, then the potential wells of step configuration formed in the semiconductor layer 2 vanish and the potential distribution in the layer 2 becomes the state as illustrated in Fig. (e) which is the same as in Fig. (b). The carriers, which were present in the n-type region 2b under the electrode 4(2) before the power failure-or noise as illustrated in Fig. (d), are stored in the same n-type region 2b because the potential at the n-type region 2b is kept lower than the potential at the adjacent p-type regions 2a. If no carrier is present in the layers under the other electrodes, no carrier is stored in the n-type regions 2b under these electrodes. Since each of the n-type regions 2b is isolated from the circumferential material or adjacent portions and is formed in a floating state, charges stored in some regions 2b are kept for a predetermined tiny, ani a no-charge state in the other regions 2b is kept for a predetermined time without charge accumulation from the circumferential material. As a result, the information "0" in the regions having no carriers as well as the information "1" in the regions having carriers are stored in the respective regions even when a power failure occurs. Thus, since the n-type regions 2b function as charge-storage regions, a nonvolatile CCD is realized. Since most of th carriers stored in the storage regions 2b are apart from the surface of the semiconductor substrate 1 because the information is basically held in a junction capacitance, the state at the surface of the substrate 1 has almost no influence on the carriers stored in the regions 2b. Therefore, the storage time of the CCD of this embodiment is laryer than that of the prior Surface-channel CCD of a nonvolatile type. The storage time according to the present invention reaches from several seconds to several minutes. Although the nonvolatility is not permanent as in the other nonvolatile memories, it is possible, upon power failure, to switch to the other power supply within the storage time. Also, during the storage time, the power failure may be recovered. Although, one preferred embodiment of the invention has been described in detail, it is to be understood that various changes, substitutions and alterations can be made therein without departing from the spirit and scope of the invention as defined by the appended claims. For example, the semiconductor substrate 1 may be n-type silicon in place of p-type silicon as used in the aforementioned embodiment. In this case, the barrier regions must be n -type regions formed by epitaxial growth and the storage regions must be p-type regions formed by diffusing or ion impl,-ntation. In the CCD having an n-type substrate, the carriers to be transferred are holes. Also, the semiconductor layer 2 may be formed without forming the epitaxial layer but by directly diffusing impunity material on the selected surface of the semiconductor material 1 to form storage regions and by using the undiffused surface as barrier regions. Ion implantation may of course be used in place of the diffusion process. Further, the driving pulses are not restricted to two-phase pulses but may be multi-phase. Frc: the foregoing description, it will be understlrÅa that, according to the present invention, a new-improved nonvolatile CCD which has a relatively long storage time can be obtained without reducing the degree of integration and without requiring additional power supply for forming storage regions.

Claims: CLAIMS 1. A charge-coupled device for transferring carriers comprising a semiconductor substrate (1) of one conducting type, an insulating layer (3) covering the semiconductor substrate (1), and a plurality of electrodes (4, 5) arranged on the insulating layer (3), the carriers being transferred by applying multi-phase driving pulses to said electrodes (4, 5), characterized in that between the semiconductor substrate (I) and the insulating layer (3) there are arranged, in a sequence in the direction of carrier transfer, first regions (2a) of the same conductivity type as the semiconductor substrate (1) and second regions (2b) of the opposite conductivity type, each pair of the said first and second regions, being arranged to be substantially covered by one of the electrodes (4, 5), each of the first regions (2a) acting as a barrier region and each of the second regions (2b) acting as a storage region and being electrically isolated from the adjacent storage regions. 2. l. method for manufacturing a charge-coupled device including the steps of forming an insulating layer (3) on a seiconductor substrate (1) of one conducting type, and arranging a plurality of electrodes (4, 5) on the insulating layer (3) for transfe#ring carriers by applying multi-phase driving pulses to the electrodes (4, 5), characterized in that the method further comprises forz,ng,between the semiconductor substrate (1) and the insulating layer (3), a layer (2) comprising a sequence of first and second regions of which the first regions (2a) are of the same conductivity type' as the substrate and the second regions (2b) are of the opposite conductivity type and act as storage regions, the first regions acting as barriers isolating each of the storage regions flom the neighbouring storage regions, one first and one second region being formed under each electrode, whereby the selective application of the multi-phase driving pulses to the electrodes results in c}j;jr#e transfer from storage region to storage region. 3. A method as claimed in claim 2, wherein the said ] ayer (2) between the substrate and the insulating layer is formed by epitaxial growth. 4. A method as claimed in claim 2, wherein the said layer (2) between the substrate and the insulating layer is formed by the use of the surface portion of the semiconductor substrate (1). 5. A method as claimed in claim 2, 3 or 4, wherein the second regions (2b) are formed by ion implantation in the layer. 6. A method as claimed in claim 2, 3 or 4, wherein the second regions (2b) are formed by diffusing impurity atoms.

Inventors: TOHGEI, RYOIKU
Applicants: FUJITSU LIMITED
Application year: 1979
Main classification: H01L29
IPC codes: H01L21, H01L29