OPTICAL MEMORY WITH STORAGE IN THREE DIMENSIONS

Abstract: A high storage capacity, fast access time, photovoltaic ferroelectric memory apparatus including a plurality of memory planes (1) which are stacked in a three dimensional configuration. Each plane is comprised of a photovoltaic ferroelectric layer (9) and a photoconductive layer (10) sandwiched between two electrodes (8), (11). Writing of information is effected by illuminating a selected xy location on the planes while simultaneously applying a voltage pulse to a selected z plane, and reading is effected by illuminating a selected xy location while connecting a selected z plane to a read amplifier.

Description: TITLE: OPTICAL MEMORY WITH STORAGE IN THREE DIMENSIONS BACKGROUND OF THE INVENTION T"he present application claims priority from its earlier filed U.S. Application Serial Number 824,895, filed 15 August, 1977 and, is related to U. S. Patent Application No. 533,365, filed on December 16, 1974, in¬ corporated herein by reference, which is in turn a con- tinuation-in-part of U. S. Patent No. 3,855,004, also in¬ corporated herein by reference. The present invention is directed to a high storage density, fast access time random access memory having a three dimensional configuration. As is known, a random access memory is one which permits information to be instantaneously either written into or read out of any selected storage position of the memory. This is in distinction to a serial memory such as magnetic tape, where a selected position can be arrived at only by unreeling the tape to the desired position. While memories such as magnetic tapes are capable of storing large amounts of information, the serial mode of access is much too slow to be directly useful in the real time operations which are performed by a computer. Presently, the most widely used random access memory is the magnetic core memory wherein storage is in a row and column arrangement of magnetic cores which are accessed by a matrix arrangement of wires. While the magnetic core memory has found wide usage in computer technology, it is limited both as to storage capacity and rapidity of accessing time. Therefore, in recent years, a great deal of expense and energy has gone into attempting to develop a better random access memory, that is, one with a very large storage capacity, and a very fast accessing time. While memories which have a larger storage capacity than magnetic core memories have been developed, at least some of these have the disad¬ vantage of being volatile, that is, the stored data is lost if the power to the memory or to the computer is cut off. It is therefore an object of the invention to provide a random access memory having a high density storage capability. It is a further object of the invention to pro¬ vide a random access memory having a fast accessing time. It is still a further object of the invention to provide a memory which is capable of storing gray scale information. It is still a further object of the invention to provide a memory which allows data to be transferred in and out at high rates. It is still a further object of the invention to provide a random access memory which is non-volatile. It is still a further object of the invention to provide a random access memory which is non-destructive. The above objects are achieved by providing a memory which utilizes photovoltaic ferroelectric material as the storage medium. For a detailed discussion of the properties of these materials as well as typical mater¬ ials which can be used, the reader is referred to the above-mentioned patent and patent application. Briefly, OM photovoltaic ferroelectric materials, which include ferroelectric ceramic materials, if remanently polar¬ ized, will produce a voltage output upon being illumin¬ ated. The polarity of the voltage output corresponds to the polarity of the remanent polarization, and its magnitude is proportional to the magnitude of the re¬ manent polarization and to the length of the material. In accordance with the invention, a plurality of two dimensional photovoltaic ferroelectric memory planes are stacked to provide a three dimensional configuration. Each memory plane by itself, provides a high density storage capability, and this capability is increased by orders of magnitude by the three dimensional stacking. Both write in and read out are primarily optical, which allows fast accessing times. And, according to the arrangement disclosed, accessing a plurality of stacked memory planes should not take any longer than accessing a single memory plane, so that increased storage capa¬ bility is achieved without an increase in the accessing time. The invention will be better understood by re¬ ferring to the accompanying drawings in which: Figure 1 is a generalized block diagram of the random access memory apparatus of the invention. Figure 2 is a cross-sectional view of a segment of a memory plane. Figure 3 is a perspective view of a segment of a memory plane. Figure 4 is a cross-sectional view of a segment of a memory plane in a region of a cavity thereof, and also shows the optical diffuser/reflector block at the end of the cavity. Figure 5 is a cross-sectional view of a stacked array of memory planes. OMPI Figure 6 is a perspective view of a stacked array of memory planes. Figure 7 is a perspective view of a fiber optic image recording station utilizing the principles of the present invention. Figure 1 is a block diagram of the general organ¬ ization of the memory apparatus of the invention. It is comprised of memory block 1 which is a stacked array of photovoltaic ferroelectric layer-photoconductive layer memory planes to be described in greater detail below. Each memory plane is connected to electrical switching network 5 by conductors 20. Beam deflector 3 and lens 4 are disposed with respect to laser 2 so as to deflect the laser beam to any xy memory position of the memory plane. Generally, in order to write information into the memory cell by cell, the beam is deflected to a selected cell at a position Xi, Yj, on the image plane while simultaneously electrical switching network 5 con- nects the electrodes of a selected memory plane Z. to write pulse generator 7. Accordingly, the information is recorded into the selected cell x., Y., z . Pre- -• 3 k ferably, as will be explained below, the write pulse generator includes a subsidiary pulse generating means for generating an opposite polarity pulse following the write pulse. As will be appreciated, the design of such multiple pulse generators is within the knowledge of those skilled in the art. To read, the beam is deflected to a selected one 2 of the N cells on the image plane while simultaneously electrical switching network 5 connects the conductors from a selected memory plane Z to the read amplifier 6. It should be understood that both the laser beam deflector system and the electrical switching network 5 are known to those skilled in the art, and form no part ITUR O of the present invention. Thus, for example, two di¬ mensional beam deflector 3 may comprise a type of electro-optical beam deflector while electrical switch¬ ing network 5 may comprise a solid state switching array. The structure of memory block 1 is shown in greater detail in Figures 2 through 6. Figure 2 is a cross-sectional view of a segment of a single memory plane while Figure 3 is a perspective view of a section of the memory plane. As shown, each memory plane is comprised of photovoltaic-ferroelectric layer 9, juxtaposed with photoconductive layer 10, and sandwiched between electrodes 8 and 11. Conductors 20 are attached to the electrodes for connection to electri¬ cal switching network 5. The photovoltaic-ferroelectric material may be any of a number of ferroelectric ceramic materials, and for greater detail in this regard, the reader is reffered to the above-mentioned patent appli¬ cation and patent. An example of the material which may be used is PZT-5A. As shown in Figures 2 and 3, each of the memory 2 planes is perforated by N individual cylindrical hollow cavities. Each of these cavities comprises a memory cell and each is disposed at a different xy location on the plane. Photoconductive layer 10 is comprises of a mater¬ ial having a high dark resistance, and preferably a low dielectric constant. Examples are organic photoconductors or zinc oxide prepared with high dark resistance. While the dimensions of the memory plane can be varied to suit individual requirements, as an example, the lateral di¬ mension may be of the order of 1 centimeter, the thick¬ ness may be of the order of .1mm or less, and the dia¬ meter of the individual cavities may be of the order of .025 mm. Each plane described can operate individually as an isolated memory medium as well as a member of a ' stacked three dimensional configuration. Operation of the stacked configuration will be more easily under¬ stood once operation as an isolated unit is described. Referring to Figure 4, the laser beam is focussed within the cavity which defines the memory cell. The light scatters off the cavity sidewalls and the reflecting- diffusing optical stop 15 which closes the end of the cavity. While not shown in the Figure, the light act- ually bounces off the sidewalls many times after being reflected back through the cavity by block 15. For even moderate depth to diameter ratios, there will be a light trapping action and the illuminated walls will absorb the light in an optical absorption depth (s) which will generally be somewhat different for the two different materials which comprise the cavity. Simultaneously with the illumination, a voltage pulse is applied across the electrodes of the memory plane by the pulse generator. The effect of the illumination in the photo- conductivity thereby allowing sufficient current to flow through the illuminated wall region to switch a portion of the remanent polarization P in the light absorbing region of the photovoltaic-ferroelectric material. The final magnitude and polarity of the polarization is de- , pendent on the magnitude and polarity of the voltage applied, the magnitude of the current that is flowing and the duration of time for which it flows, and the initial state of remanent polarization within that region. If there was no initial polarization within the region, there is now remanent polarization in the walls of the cavity parallel to the cylindrical axis. There is no remanent polarization in the remaining cavities since simultaneous illumination and application of a voltage has not occurred. However, due to the dark current of the photoconductive material, it is possible O that under certain conditions, a relatively small switch¬ ing of remanent polarization will occur in the walls of non-illuminated cavities. Although insignificant during a single write in, after a great number of write ins, this effect can interfere with proper operation. To minimize this effect after the illumination • is removed, a pulse of polarity opposite to that of the initial pulse is applied to the memory plane. This opposite polarity pulse is of sufficient magnitude to remove the small remanent polarization induced in the originally dark cells. The remanent polarization in the cell which was illuminated also may be somewhat reduced in magnitude, but the result of the operation is a net remanent polarization the photovoltaic ferroelectric portion of the cell which was illuminated with essential¬ ly zero remanent polarization in the remaining cells. It should be noted that while the ferroelectric material is illuminated in the above-described arrangement, this is not necessary for write in, remanent polarization being effected even if the ferroelectric is not illumin¬ ated or is illuminated by a wavelength which does not produce significant photoconductivity in the ferro¬ electric. To read information out of the memory block, a cavity is illuminated, and the output of the read ampli- fier is connected across the electrodes. The read ilium-. ination induces a current proportional to the magnitude of the remanent polarization which charges the total capacity across the amplifier input. This capacity is primarily the capacity between the memory plane electrodes and it is charged through the low resistance provided by the illuminated photoconductive region of the cylinder wall. The photovoltaic ferroelectric source acts init¬ ially as a constant current source charging the capacity C to a voltage V = ~ - ~ i~-ϊ—t in time cJt, the voltage appear- ing across the input of, for example, an FET operational amplifier. The voltage eventually rises to a maximum value equal to the open circuit emf of the photovoltaic- ferroelectric segment which is V Q d, where V Q is the open circuit voltage per unit length, and d is the length of a photovoltaic-ferroelectric cavity. For PZT- 5A, the constant, V Q has a value of about 60 millivolts per micrometer. An essential element of the present invention is the simultaneous accessing for both writing and read- ing of a plurality of stacked three dimensional planes. This enables accessing of a large number of stacked planes in the same time as it would take to access a • single plane. While the cylindrical cavity arrangement described is effected with particular convenience and advantages, the invention is not limited to this embodi¬ ment. Further, it should be appreciated that the type of memory disclosed has advantages over systems using various techniques including photoconductive switching to effect remanent polarization for changing the light transmission properties of an element. .Such memory does not lend itself to three dimensional stacking be- • cause of the resultant superposition and confusion, of read information. It should be further noted that while not as effective for read-out, instead of the photo- voltaic effect produced by illumination, the pyroelectric current produced by selective heating may be used. It may also be possible to use other transient currents which are proportional to the remanent polarization for read out. The photoconductive region serves two purposes. Firstly, as a photoconductive switch which allows polar¬ izing of selected cells, and secondly, as. a contact -point which connects the region in which the read signal is generated to the capacitor formed primarily by the plate electrodes. This capacity is much reduced from the capacity of a parallel plate capacitor which would be formed by the plates were they to directly cross the photovoltaic-ferroelectric layer, the dielectric con¬ stant of which is of the order of 1,000, since the photovoltaic material typically would have a dielectric constant of about 10. The arrangement thus enhances the magnitude of an initial read signal, as can be seen from the above equation. Reading can also be accomplished with the use of a current sensing amplifier instead of a voltage sensing amplifier. With the arrangement shown in the drawings, experimental results indicate that relatively fast read and write times can be obtained. Additionally, by making the cylinders diameters as well as the distances be- tween cylinders relatively small, a high packing density can be obtained. This high packing density can be in¬ creased by orders of magnitude by stacking the memory plates to form a three dimensional configuration. Thus, large numbers of plates can be stacked to increase the storage density many times without increasing the read- write access times. The .three dimensional configuration is effected by stacking a plurality of plates with the cylindrical cavities in register, and adding a multiple switching circuit which allows a selected sequential pair of electrodes to be selectively connected to the write pulse generator for the write operation and to the read amplifier for the read operation. As shown in cross- section in Figure 5 and in perspective in Figure 6, a plurality of memory plates 17, 18, etc. are stacked together with the individual plates being connected to switching network 19. Multiple diffuser-reflector block 16 is disposed at the end of the composite cavi¬ ties. To write, the beam is deflected to a cell en- trance x, y. The light which is trapped illuminates the inside of a long hollow cylinder comprises of the individual cylindrical memory cells between the elec¬ trodes bounding the planes. Information is stored in any one of the cells, x.,y.,z by illuminating the cylinder entrance x.,Y j »and switching the electrodes across the plate z. to the write pulse generator which applies the poling voltage pulse and the subsequent clean-up pulse with illumination removed. To read, cell x., Y. is illuminated, and the electrodes of plane z are switched to the amplifier input. Further, it is clear that a continuous tone image which is projected upon the cylinder entrances can be stored in one polarizing operation in any of the stacked plates. It can be removed by electrical de-poling, or by re-poling to a uniform polarization state. As shown in Figure 7, such an image could enter by way of fiber optic lines 21. While in the multiple plane system described above, readout is normally point by point with random, or if desired, sequential access for data transfer pur¬ poses, higher rates can be achieved by transferring out data in parallel into K read amplifiers simultan¬ eously from K plates. Similarly, K pulse generators can be used for writing in parallel. Since the output current of an illuminated cell is proportional to both the illumination intens¬ ity I and the remanent polarization in the cell P , the memory can be used to compute the product of these two quantities. An intensity modulated beam can be utilized to produce (I) and where is the product, f^= A .cf(I) γ (P r ) . It should be understood that while the Figures show a read-write ferroelectric photovoltaic memory, OM - li ¬ the teachings of the invention are also applicable to a read only memory in which the photoconductive layer would be dispensed with. The remanent polarization in¬ formation could be entered by a direct polarization technique, by replication, or by any other method known to those skilled in the art. I wish it to be understood that I do not desire to be limited to the exact details of construction shown and described, for obvious modifications can be made by a person skilled in the art.

Claims: THE EMBODIMENTS OF THE INVENTION IN WHICH AN EXCLUSIVE PROPERTY OR PRIVILEGE IS CLAIMED AND DEFINED AS FOLLOWS: 1. A three dimensional memory apparatus, com¬ prising, a plurality of electrically switchable stacked memory planes, each memory plane including a layer of photo¬ voltaic ferroelectric material and a layer of photo¬ conductive material, means for generating a light beam, means for optically addressing selected stor¬ age x-y locations of the memory planes with said light beam, and means for simultaneously electrically switch¬ ing to a selected memory plane, whereby the selected x-y locations on the selected plane are accessed for writing and/or reading. 2. The apparatus of claim 1 wherein each memory plane further comprises, a sandwich of said layer of photovoltaic ferro¬ electric material and said layer of photoconductive material between two electrodes, and, said means for electrically switching being connected to said electrodes. 3. The apparatus of claim 2 wherein said memory planes have a plurality of cavities therein, each cavity extending fully through the memory plane and comprising said storage x-y location. 4. The apparatus of claim 3 wherein said memory planes are stacked with the cavities of the respective planes being lined up with each other. 5. The apparatus of claim 4 further comprising, means for writing information into said memory, said means for writing comprising, means for applying a first electrical pulse to said selected memory plane, whereby due to the photoconductivity of said photoconductive layer a greater portion of the magnitude of said pulse appears across said selected x-y locations than across non-selected locations, thereby inducing a remanent polarization in the ferroelectric of said selected locations. 6. The apparatus of claim 5 further including, means for applying a second electrical pulse opposite in polarity to said first electrical pulse immediately following said first electrical pulse, the magnitude of said second pulse being substantially smaller than the magnitude of said first pulse. 7. The apparatus of claim 5 further including, means for reading which includes means for connecting said selected memory plane to a read amplification means. 8. The apparatus of claim 5 further including, a light diffuser-reflector means disposed at the end of each composite cavity which is formed by the juxta¬ position of the adjacent cavities, of the adjacent stacked memory planes. 9. The apparatus of claim 3 for accessing a plurality of cavities at the same time, comprising a light conducting element disposed to pass in, through, and out of each of said plurality of cavities. 10. A memory apparatus comprising, a memory plane comprised of a layer of photo¬ voltaic ferroelectric material and a layer of photo¬ conductive material sandwiched between two electrodes, said plane having a plurality of information storage cavities therein, each cavity passing entirely through said memory plane, and, means for addressing a selected cavity with a light beam, and, means for simultaneously applying a voltage pulse across said electrodes, whereby information is written into said selected cavity. 11. A method for determining the product of two quantities, utilizing the apparatus described in claim 7, comprising the steps of, making the intensity of said light beam pro¬ portional to one of said quantities, making the magnitude or duration of said elec¬ trical pulse proportional to the second of said quanti¬ ties, optically addressing a selected cavity with said light beam, applying said pulse to a selected memory plane, and, detecting the output current of said selected cavity in said selected plane, which current corresponds to said product. 12. A three dimensional photovoltaic ferro¬ electric memory apparatus, comprising, a plurality of electrically switchable stacked ferroelectric memory planes, each memory plane including a layer of photo¬ voltaic ferroelectric material, means for generating a light beam, means for optically addressing selected storage x-y locations of the memory planes with said light beam, and means for simultaneously electrically switching to a selected memory plane, whereby the selected x-y locations on the selected plane are accessed for reading.

Inventors: BRODY P
Applicants: PHOTOVOLTAIC CERAMIC CORP, PHOTOVOLTAIC CERAMICS CORP
Application year: 1978
Main classification: G11C11
IPC codes: G11C11, G11C13