# Patent

## Title
Wet etching composition and method

## Abstract

The invention provides a composition and method for improving the selectivity of nitride etching versus oxide etching and can be used with conventional phosphoric acid wet etch compositions. The invention describes additives that serve to inhibit silicon, oxides, and related compounds regrowth (i.e., redeposition) on the silicon oxide surface. In certain embodiments, the invention provides certain amino-substituted aryl compounds which are bound to a tri-alkoxy silane.

## Background
CROSS-REFERENCE TO RELATED APPLICATIONS
This application is a continuation application of U.S. Pat. No. 11,365,351, filed Oct. 8, 2020, which claims the benefit under 35 USC § 119 of U.S. Provisional Patent Application No. 62/912,763, filed Oct. 9, 2019, the entirety of which is incorporated herein by reference.


FIELD OF THE INVENTION
The present invention relates to a composition and method for selectively etching silicon nitride in the presence of silicon oxide, polysilicon and/or metal silicides, and more particularly to a composition and method for effectively and efficiently etching a layer of silicon nitride at a high etch rate and with high selectivity with respect to exposed or underlying layers of silicon oxide, polysilicon and/or metal silicides, particularly in a multilayer semiconductor wafer structure.
BACKGROUND OF THE INVENTION
With the continued demand for improved microelectronic device performance there is a continued emphasis on decreasing device dimensions, which provides the dual advantages of dramatically increasing device density as well as improving device performance. Device performance is improved because decreased device dimensions result in shorter paths that need to be traveled by charge carriers, e.g., electrons.
For example, Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFET) gate electrodes have as electrical points of contact the gate surface and the source and drain regions. The distance between the source and drain regions forms the channel length of the gate electrode, and as such, by decreasing device dimensions the channel length is concomitantly decreased. The result is that the switching speed of the device is increased.
It is self-evident that reducing device dimensions results in increased packaging density of devices on a microelectronic device chip. This increased packaging density brings with it sharp reductions in the length of the interconnect paths between devices, which reduces the relative negative impact (such as resistive voltage drop, cross talk or RC delay) that these interconnect paths have on overall device performance.
Such requirements however cause problems of increased parasitic capacitance, device contact resistance (gate, source and drain contacts in MOSFET devices), and tight tolerance of pattern definition. For very small sub-micron or sub-half-micron or even sub-quarter-micron modern silicon devices, the conventional photolithographic technique for patterning contacts will not meet the required tolerance of critical dimensions. Methods that have been explored to improve resolution and feature size include the formation of a self-aligned poly-silicon (poly-Si) gate structure, which helps to solve the problem of critical dimension tolerance. Using this method, the contact points that are formed for the source and the drain of the gate electrode self-align with the poly-Si gate.
One problem encountered during the formation of self-aligned gate structures has been the selective removal of silicon nitride materials relative to polysilicon, silicon oxide and/or metal silicide materials. For example, during the anisotropic etching of the silicon nitride layer covering the gate electrodes, the underlying silicon oxide layer and silicon substrate are often damaged as well, causing a deteriorated reliability of a semiconductor device.
Conventional wet etching techniques for selectively removing silicon nitride (Si3N4) have utilized hot (approximately 145-180° C.) phosphoric acid (H3PO4) solutions with water, typically 85% phosphoric acid and 15% water (by volume). Using fresh hot phosphoric acid, the typical Si3N4:SiO2 selectivity is about 40:1. Advantageously, as the nitride layer is removed, hydrated silicon oxide forms, which consistent with Le Chatelier's principle, inhibits the additional removal of silicon oxide from the device surface; thus selectivity gradually increases with use. Disadvantages associated with the use of hot phosphoric acid etches include the corrosion of metal silicide materials, e.g., gate contact materials, the etching of silicon oxide, and process control due to the difficultly associated with maintaining a specific amount of water in the process solution. In addition, hot phosphoric acid has been a difficult medium to adapt to single wafer tools, which have become increasingly preferred by many manufacturers.
Another way to selectively remove silicon nitride includes the use of a composition including hydrofluoric acid, however, said compositions also remove silicon oxides. A Si3N4:SiO2 selectivity of about 10:1 can be achieved through dilution; however, the etch rate of silicon nitride is compromised or above-ambient pressure must be used. Still another process to remove silicon nitride includes the dry etch removal using halogenated gaseous species; however, the Si3N4:SiO2 selectivity ratio is even worse than that obtained using the aforementioned wet etch processes.
3D-NAND structures in development today at all the major memory chip manufacturers require high-selectivity etching of silicon nitride (SiN) out of high aspect ratio “slits” defined by oxide (PETEOS). In the regular hot phosphoric acid “hot phos” process the selectivity is controlled by pre-dissolving a certain amount of nitride. The dissolved silicon nitride is converted into slightly soluble oxide; the same happens during etching, but the oxide soon starts depositing near the slits' openings, eventually blocking them. See also US 2017/0287725, in particular FIG. 1D, which shows an illustration where the deposition of colloidal silica tends to “pinch off” the gaps or trenches in the microelectronic device. As a result, the process window of pre-etch oxide concentration is very narrow, difficult to control, and the etch bath has to be replaced very often. Oxide re-deposition rate thus needs to be minimized.
In addition, the deep slits take a long time to etch (typically ≥1 hour). Addition of HF in small amounts increases etch rates, but also polymerization of soluble silica species and consequently oxide re-deposition rates. Furthermore, the volatility of HF and related fluorinated species causes process control difficulties.
In planar NAND technology, scaling is driven mostly by lithography. In scaling 3D NAND, extreme precision and process repeatability is required to create complex 3D structures with very high-aspect-ratio (HAR) features. Therefore, achieving success with 3D NAND requires innovative patterning solutions that minimize variability. (See Overcoming Challenges in 3D NAND Volume Manufacturing. Solid State Technology website: http://electroig.com/blog/2017/07/overcoming-challenges-in-3d-nand-volume-manufacturing/)
Precision in etching extreme HAR features is critical for optimizing channel holes and trenches for cell access, as well as its unique staircase structure architecture, which connects the cells to surrounding CMOS circuitry for reading, writing, and erasing data. If the vertical pitch of the memory stack is around 50 nm, then a 96 layer stack is on the order of 4.8 μm high. This corresponds to a challenging aspect ratio of  ̃100:1.
Additionally, as multilayer stack heights increase, so does the difficulty in achieving consistent etch and deposition profiles at the top and the bottom of the memory array. For example, given a ratio of  ̃100:1, the selective removal of Si3N4 in the memory stack becomes a wet-etch challenge. The difficulty is removing the Si3N4 consistently at the top and the bottom of the stack and across the wafer, without etching any of the SiO2. Below 96 layers, this task is performed using hot phosphoric acid ( ̃160° C.); however, at 96 layers and above, a specially formulated wet etch chemistry is needed to improve process margin.
SUMMARY OF THE INVENTION
In general, the invention provides certain silane additives which serve to inhibit silicon oxide etching, thereby improving the selectivity of nitride etching versus oxide etching and can be used with conventional phosphoric acid wet etch compositions. The additives also serve to inhibit Si regrowth (i.e., redeposition) on the silicon oxide surface. In certain embodiments, the invention provides certain amino-substituted aryl compounds which are bound to a tri-alkoxysilane. Such compounds are useful as additives in phosphoric acid wet etch compositions.



BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1 illustrates the etching performance of p-aminophenyl trimethoxysilane (designated “APS”) in the composition of the invention.
FIG. 2 is a comparison of the etch rates of silicon nitride versus TEOS wafer etch rate for various compositions. Going from left to right, the compositions are (i) 85% H3PO4 (reference); (ii) H3PO4/HF (0.004 weight percent)/ N-(2aminoethyl)-3-aminopropylsilanetriol (1.5 weight percent); (iii) H3PO4/HF (0.004 weight %)/N-(2aminoethyl)-3-aminopropylsilanetriol (3.0 weight %), (iv) H3PO4/phenylphosphonic acid (0.5 weight percent)/(0.6 weight %) trimethoxyphenylsilane; and (v) H3PO4/p-aminophenyltrimethoxysilane (0.08 weight %).



DETAILED DESCRIPTION OF THE INVENTION
In a first aspect, the invention provides a composition comprising the reaction product of:
(a)

    
    
        (i) a compound of Formula(I)
    
    






wherein A is an aromatic ring or a heteroaromatic ring, and wherein each R1 is the same or different and is chosen from hydrogen, hydroxy or hydroxyl, C1-C20 alkyl, C1-C20 alkylamino, phenyl, benzyl, and C1-C20 alkoxy, phenoxy, and C3-C8 cycloalkyl; x is 0 or 1; each y and y′ may be the same or different and is zero or is chosen from an integer of from 1 to 5; z is an integer chosen from 1, 2, or 3; m is an integer chosen from 1, 2, or 3; w is zero or an integer chosen from 1, 2, 3, or 4 and m+z=4; or

    
    
        (ii) a compound of Formula (II)

(R1)3Si-M-Si(R1)3   (II)

wherein each R1 is the same or different and is as defined above, and -M- is chosen from a —NH— or —O—;

        (b) phosphoric acid; and
        (c) a solvent comprising water.
    
    


As used above, the phrase “reaction product of . . . ” reflects the circumstances where the starting compounds recited in component (a) hydrolyze to yield other species in the presence of aqueous phosphoric acid.
In one embodiment, in the compositions of the invention, the compound of Formula (I) has the following structure:




wherein R1 is as defined above and each R2 is the same or different and is chosen from H and C1-C20 alkyl. In a further embodiment, the compound of Formula (I) is p-aminophenyl trimethoxysilane.

In another embodiment, the component (a) is triphenylsilanol.
In another embodiment, each R1 is the same or different and is chosen from hydroxyl, C1-C20 alkoxy, and C1-C20 alkylamino, and y, y′, and x are zero.
As used herein, the term “aromatic ring” or “aryl” includes phenyl and napthyl and such groups substituted with one to three groups chosen from
C1-C20 alkyl, C1-C20 alkoxy, —CN, —NO2, C1-C20 alkoxycarbonyl, C1-C20 alkanoyloxy, C1-C20 alkylsulfonyl, hydroxyl, carboxyl, halo, phenyl, benzyl, amino-C1-C20 alkyl, ——C1-C20 alkyl-SO3H, ——C1-C20 alkyl-PO3H2, and groups of the formula —N(R1)2.
The term “heteroaromatic ring” or “heteroaryl” includes 5 or 6-membered heterocyclic aryl rings containing one oxygen atom, and/or one sulfur atom, and up to three nitrogen atoms, said heterocyclic aryl ring optionally fused to one or two phenyl rings. Examples of such systems include thienyl, furyl, pyrrolyl, imidazolyl, pyrazolyl, thiazolyl, isothiazolyl, oxazolyl, isoxazolyl, triazolyl, thiadiazolyl, oxadiazolyl, tetrazolyl, thiatriazolyl, oxatriazolyl, pyridyl, pyrimidyl, pyrazinyl, pyridazinyl, thiazinyl, oxazinyl, triazinyl, thiadiazinyl, oxadiazinyl, dithiazinyl, dioxazinyl, oxathiazinyl, tetrazinyl, thiatriazinyl, oxatriazinyl, dithiadiazinyl, imidazolinyl, dihydropyrimidyl, tetrahydropyrimidyl, tetrazolo-[1,5-b]pyridazinyl and purinyl, benzoxazolyl, benzothiazolyl, benzimidazolyl, indolyl and the like; such groups are optionally substituted with one to three groups chosen from C1-C20 alkyl, C1-C20 alkoxy, —CN, —NO2, C1-C20 alkoxycarbonyl, C1-C20 alkanoyloxy, C1-C20 alkylsulfonyl, hydroxyl, carboxyl, halo, phenyl, benzyl, amino-C1-C20 alkyl, ——C1-C20 alkyl-SO3H, ——C1-C20 alkyl-PO3H2, and groups of the formula —N(R1)2.
As used herein, the term “nitrogen-containing heterocyclic ring” includes structures such as pyridine, piperidine, pyrazine, and imidazole. Such ring systems can be optionally substituted with one to three groups chosen from C1-C20 alkyl, C1-C20 alkoxy, —CN, —NO2, C1-C20 alkoxycarbonyl, C1-C20 alkanoyloxy, C1-C20 alkylsulfonyl, hydroxyl, carboxyl, halo, phenyl, benzyl, amino-C1-C20 alkyl, ——C1-C20 alkyl-SO3H, ——C1-C20 alkyl-PO3H2, and groups of the formula —N(R1)2.
As used herein, the term “C1-C20 alkylamino” refers to groups having from one to twenty carbon atoms and at least one primary or secondary amino functionality. Examples of such compounds include aminoethyl;
aminopropyl; aminobutyl; (2-aminoethyl)aminopropyl; (2-aminoethyl)aminoethyl; (2-aminoethyl)aminobutyl; and 2-aminoethyl(2-aminoethyl)aminopropyl.
One aspect of the present invention relates to compositions which are useful in the selective removal of silicon nitride relative to polysilicon (poly-Si) and silicon oxide material deposited from a silicon oxide precursor source, and hence are useful as wet etchants for at least partial removal of silicon nitride material from a microelectronic device. Metal silicide materials that may be present should not be substantially corroded by said removal compositions.
The invention also provides methods, processes, and systems for using the wet etching compositions to remove silicon nitride from a substrate containing silicon nitride and silicon oxide. The compositions can produce an advantageously high etch rate of silicon nitride, an advantageously high selectivity of silicon nitride relative to silicon oxide, or an advantageous balance of these performance properties.
For ease of reference, “microelectronic device” corresponds to semiconductor substrates, including 3D NAND structures, flat panel displays, and microelectromechanical systems (MEMS), manufactured for use in microelectronic, integrated circuit, or computer chip applications. It is to be understood that the term “microelectronic device” is not meant to be limiting in any way and includes any substrate that includes a negative channel metal oxide semiconductor (nMOS) and/or a positive channel metal oxide semiconductor (pMOS) transistor and will eventually become a microelectronic device or microelectronic assembly.
As used herein, “suitability” for removing silicon nitride material from a microelectronic device having such nitride material thereon corresponds to at least partial removal of silicon nitride material from the microelectronic device.
As used herein, “silicon nitride” and “Si3N4” correspond to pure silicon nitride (Si3N4) as well as impure silicon nitride including hydrogen, carbon and/or oxygen impurities in the crystal structure.
As used herein, “silicon oxide” refers to thin films made of silicon oxide (SiOx), e.g., SiO2, “thermal oxide” (ThOx), and the like. The silicon oxide can be placed on the substrate by any method, such as by deposition via chemical vapor deposition from TEOS or another source, or by being thermally deposited. The silicon oxide generally contains a commercially useful low level of other materials or impurities. The silicon oxide may be present as part of a microelectronic device substrate as a feature of the microelectronic device, for example as an insulating layer.
As used herein, “at least partial removal of silicon nitride material” corresponds to the removal of at least a portion of the exposed silicon nitride layer. For example, partial removal of silicon nitride material includes the anisotropic removal of a silicon nitride layer that covers/protects the gate electrodes to form a Si3N4 sidewall. It is also contemplated herein that the compositions of the present invention may be used more generally to substantially remove silicon nitride material relative to poly-silicon and/or silicon oxide layers. In those circumstances, “substantial removal” is defined in one embodiment as at least 90%, in another embodiment at least 95%, and in yet another embodiment at least 99% of the silicon nitride material is removed using the compositions of the invention.
As used herein, “about” is intended to correspond to +/−5% of the stated value.
As used in the specification and the appended claims, the singular forms “a,” “an” and “the” include their plural referents unless the context clearly dictates otherwise. The terms “containing” or “including” are intended to be synonymous with the term “comprising”, meaning that at least the named compound, element, particle, or method step, etc., is present in the composition or article or method, but does not exclude the presence of other compounds, materials, particles, method steps, etc., even if the other such compounds, material, particles, method steps, etc., have the same function as what is named, unless expressly excluded in the claims.
As used herein, “metal silicide” corresponds to any silicide including the species Ni, Pt, Co, Ta, Mo, W, and Ti, including but not limited to TiSi2, NiSi, CoSi2, NiPtSi, tantalum silicide, molybdenum silicide, and tungsten silicide.
“Silicic acid” is a general name for a family of chemical compounds of silicon, hydrogen, and oxygen, with the general formula [SiOx(OH)4−2x]n, and includes the compounds metasilicic acid ((H2SiO3)n), orthosilicic acid (H4SiO4), disilicic acid (H2Si2O5), and pyrosilicic acid (H6Si2O7). Silicic acid can be obtained in many ways well known to those skilled in the art, e.g. by hydrating fine silica powder (preferably 1 μm diameter or less), alkoxysilanes (e.g., tetramethoxysilane (TMOS), tetraethoxysilane (TEOS), tetra-n-propoxysilane, tetra-n-butoxysilane), alkoxysilanes with amino groups (e.g., aminotriethoxysilane, hexaethoxydisilazane), alkoxysilanes with one or more halogen or pseudohalogen groups (e.g., triethoxychlorosilane, triethoxyfluorosilane, triethoxy(isocyanato)silane, diethoxydichlorosilane), or combinations thereof. For ease of reference, “alkoxysilane” will hereinafter be used to include alkoxysilanes, alkoxysilanes with amino groups and alkoxysilanes with one or more halogen or pseudohalogen groups.
As described herein, the silicon oxide layer may be deposited from a silicon oxide precursor source, e.g., TEOS, or may be thermally deposited silicon oxide. Other typical low-k materials “low-k dielectric material” corresponds to any material used as a dielectric material in a layered microelectronic device, wherein the material has a dielectric constant less than about 3.5. In certain embodiments, the low-k dielectric materials include low-polarity materials such as silicon-containing organic polymers, silicon-containing hybrid organic/inorganic materials, organosilicate glass (OSG), TEOS, fluorinated silicate glass (FSG), silicon dioxide, silicon oxycarbide, silicon oxynitride, silicon nitride, carbon-doped oxide (CDO) or carbon-doped glass, for example, CORALTM from Novellus Systems, Inc., BLACK DIAMONDTM from Applied Materials, Inc.(e.g., BD1, BD2, and BD3 designations for PECVD) SiLKTM dielectric resins from Dow (polymers based on crosslinked polyphenylenes by reaction of polyfunctional cyclopentadienone and acetylene-containing materials; see, for example, U.S. Pat. No. 5,965,679, incorporated herein by reference), and NANOGLASSTM of Nanopore, Inc, (Silica aerogel/xerogel (known as nanoporous silica), and the like. It is to be appreciated that the low-k dielectric materials may have varying densities and varying porosities.
Compositions of the invention may be embodied in a wide variety of specific formulations, as hereinafter more fully described.
In all such compositions, wherein specific components of the composition are discussed in reference to weight percentage ranges including a zero lower limit, it will be understood that such components may be present or absent in various specific embodiments of the composition, and that in instances where such components are present, they may be present at concentrations as low as 0.001 weight percent, based on the total weight of the composition in which such components are employed.
The composition includes aqueous phosphoric acid (e.g., concentrated phosphoric acid) in an amount that is effective to produce desired etching of silicon nitride. The term “aqueous phosphoric acid” refers to an ingredient of the composition that is mixed or combined with other ingredients of the composition to form the composition. The term “phosphoric acid solids” refers to the non-aqueous component of an aqueous phosphoric acid ingredient, or of a composition that is prepared from aqueous phosphoric acid ingredient.
The amount of phosphoric acid solids contained in a composition can be an amount that, in combination with the other materials of an etching composition, will provide desired etching performance, including desired silicon nitride etch rate and selectivity, which typically requires a relatively high amount (concentration) of phosphoric acid solids. For example, an etching composition can contain an amount of phosphoric acid solids that is at least about 50 weight percent based on total weight of the composition, e.g., at least 70, or at least about 80 or 85 weight percent phosphoric acid solids based on total weight of the composition.
To provide a desired amount of phosphoric acid solids, the composition may contain “concentrated” phosphoric acid as an ingredient that is mixed or combined with other ingredients (one ingredient optionally being water, in some form) to produce the composition. “Concentrated” phosphoric acid refers to an aqueous phosphoric acid ingredient that contains a high or maximum amount of phosphoric acid solids in the presence of a low or minimum amount of water and substantially no other ingredients (e.g., less than 0.5 or 0.1 weight percent of any non-water or non-phosphoric acid solids materials). Concentrated phosphoric acid can typically be considered to have at least about 80 or 85 weight percent phosphoric acid solids in about 15 or 20 weight percent water. Alternately, the composition may be considered to include an amount of concentrated phosphoric acid that is diluted with water, meaning for example concentrated phosphoric acid that has been diluted with an amount of water before or after being combined with other ingredients of the etching composition, or an equivalent formed in any manner. As another alternative, an ingredient of the composition can be concentrated phosphoric acid or a diluted phosphoric acid, and the etching composition can contain an additional amount of water that is provided to the composition either as a component of a different ingredient or as a separate water ingredient.
As an example, if concentrated phosphoric acid is used to form the composition, the amount of concentrated phosphoric acid (85 weight percent, in water) can be an amount that is at least 60, e.g., at least 80 or at least 90, 93, 95, or at least 98 weight percent of the composition, based on total weight of the composition. In embodiments where the concentration of phosphoric acid solids is greater than 85%, this is generally obtained by evaporation of some of the ater that is contains in the concentrated acid, or by adding solid (99-100%) phosphoric acid or phosphoric acid oligomer such as pyrophosphoric acid.
Component (c) is a solvent comprising water. Optionally, the solvent may further comprise one or more water-miscible solvents such as pyrrolidinones, glycols, amines, and glycol ethers, including, but not limited to, methanol, ethanol, isopropanol, butanol, and higher alcohols (such as C2-C4 diols and C2-C4 triols), tetrahydrofurfuryl alcohol (THFA), halogenated alcohols (such as 3-chloro-1,2-propanediol, 3-chloro-1-propanethiol, 1-chloro-2-propanol, 2-chloro-1-propanol, 3-chloro-1-propanol, 3-bromo-1,2-propanediol, 1-bromo-2-propanol, 3-bromo-1-propanol, 3-iodo-1-propanol, 4-chloro-1-butanol, 2-chloroethanol), dichloromethane, chloroform, acetic acid, propionic acid, trifluoroacetic acid, tetrahydrofuran N-methylpyrrolidinone (NMP), cyclohexylpyrrolidinone, N-octylpyrrolidinone, N-phenylpyrrolidinone, methyldiethanolamine, methyl formate, dimethyl formamide (DMF), dimethylsulfoxide (DMSO), tetramethylene sulfone (sulfolane), diethyl ether, phenoxy-2-propanol (PPh), propriophenone, ethyl lactate, ethyl acetate, ethyl benzoate, acetonitrile, acetone, ethylene glycol, propylene glycol (PG), 1,3-propanediol, dioxane, butyryl lactone, butylene carbonate, ethylene carbonate, propylene carbonate, dipropylene glycol, diethylene glycol monomethyl ether, triethylene glycol monomethyl ether, diethylene glycol monoethyl ether, triethylene glycol monoethyl ether, ethylene glycol monopropyl ether, ethylene glycol monobutyl ether, diethylene glycol monobutyl ether (i.e., butyl carbitol), triethylene glycol monobutyl ether, ethylene glycol monohexyl ether, diethylene glycol monohexyl ether, ethylene glycol phenyl ether, propylene glycol methyl ether, dipropylene glycol methyl ether (DPGME), tripropylene glycol methyl ether (TPGME), dipropylene glycol dimethyl ether, dipropylene glycol ethyl ether, propylene glycol n-propyl ether, dipropylene glycol n-propyl ether (DPGPE), tripropylene glycol n-propyl ether, propylene glycol n-butyl ether, dipropylene glycol n-butyl ether, tripropylene glycol n-butyl ether, propylene glycol phenyl ether, dipropylene glycol methyl ether acetate, tetraethylene glycol dimethyl ether (TEGDE), dibasic ester, glycerine carbonate, N-formyl morpholine, triethyl phosphate, and combinations thereof. When using an alkoxysilane additive, its hydrolysis generates a small amount of alcohol, for example, methanol or ethanol, which is incorporated into the formulation as the alcohol itself or as its phosphoric acid monoester. In addition, the organic solvent may comprise other amphiphilic species, i.e., species that contain both hydrophilic and hydrophobic moieties similar to surfactants.
The compositions can comprise, consist of, or consist essentially of the recited ingredients and any combination of optional ingredients. As a general convention throughout the present description, the composition as described, or an ingredient or component thereof, that is said to “consist essentially of” a group of specified ingredients or materials refers to a composition that contains the specified ingredients or materials with not more than a low or insignificant amount of other ingredients or materials, e.g., not more than 5, 2, 1, 0.5, 0.1, or 0.05 parts by weight of other ingredients or materials. For example, a composition consisting essentially of the reaction product of:

    
    
        (a) (i) a compound of Formula(I)
    
    






wherein A is an aromatic ring or a heteroaromatic ring, and wherein each R1 is the same or different and is chosen from hydrogen, C1-C20 alkyl, C1-C20 alkylamino, phenyl, benzyl, and C1-C20 alkoxy, phenoxy, and C3-C8 cycloalkyl; x is 0 or 1; each y and y′ may be the same or different and is zero or is chosen from an integer of from 1 to 5; z is an integer chosen from 1, 2, or 3; m is an integer chosen from 1, 2, or 3; w is zero or an integer chosen from 1, 2, 3, or 4 and m+z=4; or

    
    
        (ii) a compound of Formula (II)

(R1)3Si-M-Si(R1)3   (II)

wherein each R1 is the same or different and is as defined above, and -M- is chosen from —NH— or —O—;

        (b) phosphoric acid; and
        (c) a solvent comprising water;

means a composition that contains these ingredients and not more than 5, 2, 1, 0.5, 0.1, or 0.05 parts by weight of any other dissolved or un-dissolved material or materials (individually or as a total) other than the identified materials.

    
    


In certain embodiments of the invention, the composition may further comprise a fluoride compound. In one embodiment, the fluoride compound is selected from HF and monofluoro phosphoric acid. In other embodiments, the fluoride compound is selected from fluorosilicic acid, cesium fluoride, and potassium fluoride. In other embodiments, the fluoride compound is selected from fluoroboric acid; tetramethylammonium hexafluorophosphate; ammonium fluoride; ammonium bifluoride; quaternary ammonium tetrafluoroborates and quaternary phosphonium tetrafluoroborates having the formula NR′4BF4 and PR′4BF4, respectively, wherein R′ may be the same as or different from one another and is selected from hydrogen, straight-chained, branched, or cyclic C1-C6 alkyl, and straight-chained or branched C6-C10 aryl; tetrabutylammonium tetrafluoroborate (TBA-BF4); and combinations thereof.
As used herein, “fluoride compound” corresponds to species including ionic fluoride ion (F—) or covalently bonded fluorine. It is to be appreciated that the fluoride species may be included as a fluoride species or generated in situ. In certain embodiments, this compound capable of generating ions or the fluoride ion will be derived from HF or monoflurophosphoric acid. In concentrated phosphoric acid compositions, HF will exist mostly in the form of monofluorophosphoric acid (MFPA). In certain embodiments, the non-volatile MFPA may be used directly in the compositions in order to simplify addition and blending. In other embodiments, the fluoride compound may be chosen from CsF and KF. In other embodiments, the fluoride compound may be chosen from tetramethylammonium hexafluorophosphate; ammonium fluoride; ammonium bifluoride; quaternary ammonium tetrafluoroborates and quaternary phosphonium tetrafluoroborates having the formula NR′4BF4 and PR′4BF4, respectively, wherein each R′ may be the same as or different from one another and is chosen from hydrogen, straight-chained, branched, or cyclic C1-C6 alkyl (e.g., methyl, ethyl, propyl, butyl, pentyl, hexyl), and straight-chained or branched C6-C10 aryl (e.g., benzyl); tetrabutylammonium tetrafluoroborate (TBA-BF4); and combinations thereof. In certain embodiments, the fluoride compound is selected from ammonium fluoride, ammonium bifluoride, quaternary ammonium tetrafluoroborates (e.g., tetramethylammonium tetrafluoroborate, tetraethylammonium tetrafluoroborate, tetrapropylammonium tetrafluoroborate, tetrabutylammonium tetrafluoroborate), quaternary phosphonium tetrafluoroborates, or combinations thereof. In certain embodiments, the fluoride compound comprises ammonium bifluoride, ammonium fluoride, or a combination thereof.
In certain embodiments, the compositions of the invention further comprise low molecular weight amines and amine phosphate salts. In other embodiments, the low molecular weight amines and amine phosphate salts are primary, secondary, or tertiary C1-C6 alkylamine or phosphate salts thereof. Examples include trimethylamine, triethylamine, tripropylamine, tributylamine, N,N-dimethylaniline, N-methylaniline, and the like. It will be appreciated that when such amines are added to a concentrated H3PO4 composition, amine phosphate salts will form. Additionally, the compositions may further comprise nitrogen-containing heterocyclic rings, optionally substituted by with one to three groups chosen from C1-C20 alkyl, C1-C20 alkoxy, —CN, —NO2, C1-C20 alkoxycarbonyl, C1-C20 alkanoyloxy, C1-C20 alkylsulfonyl, hydroxyl, carboxyl, halo, phenyl, benzyl, amino-C1-C20 alkyl, ——C1-C20 alkyl-SO3H, ——C1-C20 alkyl-PO3H2, and groups of the formula —N(R1)2.
In certain embodiments, the composition may further comprise one or more polymers. Polymers, when present, include, but are not limited to, methacrylic acid homopolymer and copolymers with, for example, acrylamidomethylpropane sulfonic acid and maleic acid; maleic acid/vinyl ether copolymer; poly(vinylpyrrolidone)/vinyl acetate; homopolymers such as phosphonated polyethyleneglycol oligomers, poly(acrylic acid) (PAA), poly(acrylamide), poly(vinyl acetate), poly(ethylene glycol) (PEG), polypropylene glycol) (PPG), poly(styrene sulfonic acid), poly(vinyl sulfonic acid), poly(vinyl phosphonic acid), poly(vinyl phosphoric acid), poly(ethyleneimine), poly(propyleneimine), polyallylamine, polyethylene oxide (PEO), polyvinyl pyrrolidone (PVP), PPG-PEG-PPG block copolymers, PEG-PPG-PEG block copolymers, poly(vinyl alcohol), poly(hydroxyethyl)acrylate, poly(hydroxyethyl)methacrylate, hydroxyethyl cellulose, methylhydroxyethyl cellulose, hydroxypropyl cellulose, methylhydroxypropyl cellulose, xanthan gum, potassium alginate, pectin, carboxymethylcellulose, glucosamine, poly(diallyldimethylammonium) chloride, PEGylated (i.e., polyethyleneglycol-ated) methacrylate/acrylate copolymers, poly MADQuat and copolymers thereof, dimethylaminomethacrylate polymers and compolymers thereof, trimethylammonium methylmethacrylate polymers (i.e. water-miscible solvents) and copolymers thereof, and combinations thereof. The copolymers above may be random or block copolymers. When present, the amount of polymer(s) in the composition is in a range from about 0.0001 weight % to about 5 weight %, based on the total weight of the composition. In another embodiment the amount of polymer(s) in the composition is in the range from about 0.0001 weight % to about 20 weight %, based on the total weight of the composition.
The composition may optionally comprise surfactant(s). As used herein the term “surfactant” refers to an organic compound that lowers the surface tension (or interfacial tension) between two liquids or between a liquid and a solid, typically an organic amphiphilic compound that contains a hydrophobic group (e.g., a hydrocarbon (e.g., alkyl) “tail”) and a hydrophilic group. When present, surfactants for use in the compositions described herein include, but are not limited to, amphoteric salts, cationic surfactants, anionic surfactants, zwitterionic surfactants, non-ionic surfactants, and combinations thereof including, but not limited to, decylphosphonic acid, dodecylphosphonic acid (DDPA), tetradecylphosphonic acid, hexadecylphosphonic acid, bis(2-ethylhexyl)phosphate, octadecylphosphonic acid, perfluoroheptanoic acid, prefluorodecanoic acid, trifluoromethanesulfonic acid, phosphonoacetic acid, dodecylbenzenesulfonic acid (DDBSA), other R*-benzene sulfonic acids or salts thereof (where the R* is a straight-chained or branched C8-C18 alkyl group), dodecenylsuccinic acid, dioctadecyl hydrogen phosphate, octadecyl dihydrogen phosphate, dodecylamine, dodecenylsuccinic acid monodiethanol amide, lauric acid, palmitic acid, oleic acid, juniperic acid, 12-hydroxystearic acid, octadecylphosphonic acid (ODPA), dodecyl phosphate. Non-ionic surfactants contemplated include, but are not limited to, polyoxyethylene lauryl ether, dodecenylsuccinic acid monodiethanol amide, ethylenediamine tetrakis (ethoxylate-block-propoxylate) tetrol, polyethylene glycols, polypropylene glycols, polyethylene or polypropylene glycol ethers, block copolymers based on ethylene oxide and propylene oxide, polyoxypropylene sucrose ether, t-octylphenoxypolyethoxyethanol, 10-ethoxy-9,9-dimethyldecan-1-amine, Polyoxyethylene (9) nonylphenylether, branched, Polyoxyethylene (40) nonylphenylether, branched, dinonylphenyl polyoxyethylene, nonylphenol alkoxylates, polyoxyethylene sorbitol hexaoleate, polyoxyethylene sorbitol tetraoleate, polyethylene glycol sorbitan monooleate, sorbitan monooleate, alcohol alkoxylates, alkyl-polyglucoside, ethyl perfluorobutyrate, 1,1,3,3,5,5-hexamethyl-1,5-bis[2-(5-norbornen-2-yl)ethyl]trisiloxane, monomeric octadecylsilane derivatives, siloxane modified polysilazanes, silicone-polyether copolymers, and ethoxylated fluorosurfactants. Cationic surfactants contemplated include, but are not limited to, cetyl trimethylammonium bromide (CTAB), tetraethylammonium salt of heptadecanefluorooctane sulfonic acid, stearyl trimethylammonium chloride, 4-(4-diethylaminophenylazo)-1-(4-nitrobenzyl)pyridium bromide, cetylpyridinium chloride monohydrate, benzalkonium chloride, benzethonium chloride benzyldimethyldodecylammonium chloride, benzyldimethylhexadecylammonium chloride, hexadecyltrimethylammonium bromide, dimethyldioctadecylammonium chloride, dodecyltrimethylammonium chloride, hexadecyltrimethylammonium p-toluenesulfonate, didodecyldimethylammonium bromide, di(hydrogenated tallow)dimethylammonium chloride, tetraheptylammonium bromide, tetrakis(decyl)ammonium bromide, and oxyphenonium bromide, guanidine hydrochloride (C(NH2)3Cl) or triflate salts such as tetrabutylammonium trifluoromethanesulfonate, dimethyldioctadecylammonium chloride, dimethyldihexadecylammonium bromide, di(hydrogenated tallow)dimethylammonium chloride, and polyoxyethylene (16) tallow ethylmonium ethosulfate. Anionic surfactants contemplated include, but are not limited to, poly(acrylic acid sodium salt), ammonium polyacrylate, sodium polyoxyethylene lauryl ether, sodium dihexylsulfosuccinate, sodium dodecyl sulfate, dioctylsulfosuccinate salt, 2-sulfosuccinate salts, 2,3-dimercapto-1-propanesulfonic acid salt, dicyclohexyl sulfosuccinate sodium salt, sodium 7-ethyl-2-methyl-4-undecyl sulfate, phosphate fluorosurfactants, fluorosurfactants, and polyacrylates. Zwitterionic surfactants include, but are not limited to, acetylenic diols or modified acetylenic diols, ethylene oxide alkylamines, N,N-dimethyldodecylamine N-oxide, sodium cocoaminpropinate, 3-(N,N-dimethylmyristylammonio)propanesulfonate, and (3-(4-heptyl)phenyl-3-hydroxypropyl)dimethylammoniopropanesulfonate. The amount of surfactant in the composition can be an amount that, in combination with the other materials of an etching composition, will provide desired overall performance. For example, the composition can contain an amount of surfactant that may be in a range from about 0.001 to about 10 weight percent, e.g., from about 0.01 to about 0.5, 1, 2, 7, or 7 weight percent surfactant based on total weight of the composition.
Optionally, the compositions may further comprise an amount of carboxylic acid compound, meaning an organic compound that contains at least one carboxylic acid group. According to the invention, the presence of a carboxylic acid compound in composition as described can improve performance by inhibiting redeposition of silicon oxide or formation of particles of the same. In certain embodiments, the carboxylic acid compounds for use in the compositions include but are not limited to acetic acid, malonic acid, oxalic acid, monoalkyl and 2,2-dialklymalonic acids, succinic acid, 2-methylsuccinic acid, glutaric acid, adipic acid, salicylic acid, 1,2,3-propanetricarboxylic acid (a.k.a. tricarballylic acid), 2-phosphonoacetic acid, 3-phosphonopropanoic acid, and 2-phosphonobutane-1,2,4-tricarboxylic acid (PBTCA), any of which may be used alone, in combination together with each other, or in combination with a different carboxylic acid compound such as etidronic acid, nitrilotris(methylenephoshonic acid), ethylenediaminetetra(methylenephoshonic acid), optionally include diethylenetriaminepentakis(methylenephoshonic acid), octylphosphonic acid and phenylphosphoic acid
The amount of carboxylic acid compound (including derivatives thereof) contained in the compositions can be an amount that, in combination with the other materials of the compositions, will provide desired etching performance while not otherwise affecting performance or chemical stability of an etching composition. For example, the compositions can contain an amount of carboxylic acid compound, which may be a single species or a combination of two or more species, in a range from about 0.01 to about 10 weight percent based on total weight of the composition, or from about 0.1 to about 5 or 8 weight percent based on total weight of the composition.
The composition may contain water from one or from multiple sources. For example, water will be present in an aqueous phosphoric acid ingredient. Additionally, water may be used as a carrier for one or more of the other ingredients of the etching composition, and water may be added alone as its own ingredient. The amount of water should be sufficiently low to allow the composition to exhibit desired or preferred or advantageous etching performance properties, including a useful (sufficiently high) silicon nitride etch rate. An increase in the presence of water tends to increase the etch rate of silicon nitride but can also depress the boiling point of the etching composition, which forces a reduction in operating temperature of the etching composition and an opposite effect. Examples of amounts of water, from all sources, in an etching composition, can be less than about 50, 40, or 30 weight percent, for example in a range from about 5 weight percent to about 25 percent by weight, based on total weight of the composition, or in a range from about 10 to 20 weight percent water based on total weight of the composition.
Optionally, these and other example compositions as described can contain, consist of, or consist essentially of the phosphoric acid, the solvent comprising water, component (a) materials, and any one or any combination of the identified optional ingredients. Certain embodiments of the compositions of the invention do not require and may exclude other types of ingredients not typically included in an etching composition, such as a pH adjusting agent (other than the acids mentioned as potential ingredients herein) and solid materials such as abrasive particles.
In certain embodiments of the invention, the described compositions provides a method for removing silicon nitride from a microelectronic device, said method comprising contacting the microelectronic device with a composition of the present invention, for sufficient time under sufficient conditions to at least partially remove said silicon nitride material from the microelectronic device.
For example, silicon nitride material may be removed without substantially damaging metal and metal silicide interconnect materials. The invention thus provides methods for selectively and substantially removing silicon nitride materials relative to polysilicon and/or silicon oxide materials from the surface of the microelectronic device having same thereon using the compositions described herein. The metal silicide materials that are present are not substantially corroded by said removal compositions using said method.
In etching application, the composition is applied in any suitable manner to the surface of the microelectronic device having the silicon nitride material thereon, e.g., by spraying the removal composition on the surface of the device, by dipping (in a static or dynamic volume of the removal composition) of the device including the silicon nitride material, by contacting the device with another material, e.g., a pad, or fibrous sorbent applicator element, that has the removal composition absorbed thereon, by contacting the device including the silicon nitride material with a circulating removal composition, or by any other suitable means, manner or technique, by which the removal composition is brought into removal contact with the silicon nitride material. The application may be in a batch or single wafer apparatus, for dynamic or static cleaning. In one embodiment, the application of the removal composition to the surface of the microelectronic device is controlled agitation whereby the composition is circulated through the container housing said composition. Active agitation, e.g., turbulence, stirring, etc., is not recommended when the etch rates of silicide and/or poly-Si are preferably low. However, for removal of silicon nitride from high aspect ratio structures, stirring may be desired, both for faster liquid exchange in and out of the structure and to minimize redeposition of oxide.
The compositions of the present invention, by virtue of their selectivity for silicon nitride material relative to other materials that may be present on the microelectronic device structure and exposed to the composition, such as metallization, polysilicon, silicon oxide(s), etc., achieve at least partial removal of the silicon nitride material in a highly efficient and highly selective manner.
In use of the compositions of the invention for removing silicon nitride material from microelectronic device structures having same thereon, the composition typically is contacted with the microelectronic device structure for a sufficient time of from about 1 minute to about 200 minutes, in one embodiment, about 15 minutes to about 100 minutes, or about 1 minute to about 5 minutes for a single wafer tool, at sufficient conditions including, but not limited to, in one embodiment, a temperature in a range of from about 60° C. to about 120° C., or in another embodiment, about 100° C. to about 250° C. Such contacting times and temperatures are illustrative, and any other suitable time and temperature conditions may be employed that are efficacious to at least partially remove the silicon nitride material from the device structure, within the practice of the invention.
Following the achievement of the desired removal action, the removal composition is readily removed from the microelectronic device to which it has previously been applied, e.g., by rinse, wash, or other removal step(s), as may be desired and efficacious in a given end use application of the compositions of the present invention. For example, the device may be rinsed with a rinse solution including deionized water and/or dried (e.g., spin-dry, N2, vapor-dry, etc.).
The compositions of the invention selectively etch silicon nitride material relative to poly-Si and silicon oxides from the surface of the microelectronic device. For example, the selectivity of silicon nitride to silicon oxide(s) in the presence of the removal compositions of the invention are, in one embodiment, in a range from about 10:1 to about 7,000:1, in another embodiment about 30:1 to about 3,000:1, and in another embodiment about 100:1 to about 2000. When the silicic acid source includes an alkoxysilane, e.g., TEOS, the selectivity of silicon nitride relative to silicon oxide(s) can be tuned from about 20:1 to infinity in one embodiment and in the range from about 20:1 to about 7,000:1 in another embodiment.
An etching step of the present description can be useful to etch silicon nitride material from a surface of any type of substrate. According to particular embodiments, a substrate can include alternating thin film layers of silicon nitride as structural features of a substrate that includes alternating thin film layers of the silicon nitride layers with silicon oxide. The silicon oxide layers are high aspect ratio structures that contain the silicon nitride layers disposed between the layers of silicon oxide.
A still further aspect of the invention relates to methods of manufacturing an article comprising a microelectronic device, said method comprising contacting the microelectronic device with the compositions of the present invention for sufficient time to etchingly remove silicon nitride material from the surface of the microelectronic device having same thereon, and incorporating said microelectronic device into said article.
The compositions described herein are easily formulated by simple addition of the respective ingredients and mixing to homogeneous condition. Furthermore, the compositions may be readily formulated as single-package formulations or multi-part formulations that are mixed at the point of use. The individual parts of the multi-part formulation may be mixed at the tool or in a storage tank upstream of the tool. The concentrations of the respective ingredients may be widely varied in specific multiples of the composition, i.e., more dilute or more concentrated, and it will be appreciated that the compositions described herein can variously and alternatively comprise, consist or consist essentially of any combination of ingredients consistent with the disclosure herein.
Another aspect of the invention relates to a kit including, in one or more containers, one or more components adapted to form the compositions described herein. In one embodiment, the kit includes, in one or more containers, the combination of at least one of components (A)-(C) above for combining with water at the fab or the point of use. The containers of the kit must be suitable for storing and shipping said cleaning composition components, for example, NOWPak®. containers (Entegris, Inc., Danbury, Conn., USA). The one or more containers which contain the components of the first cleaning composition preferably include means for bringing the components in said one or more containers in fluid communication for blending and dispense. For example, referring to the NOWPak®. containers, gas pressure may be applied to the outside of a liner in said one or more containers to cause at least a portion of the contents of the liner to be discharged and hence enable fluid communication for blending and dispense. Alternatively, gas pressure may be applied to the head space of a conventional pressurizable container or a pump may be used to enable fluid communication. In addition, the system preferably includes a dispensing port for dispensing the blended cleaning composition to a process tool.
Substantially chemically inert, impurity-free, flexible and resilient polymeric film materials, such as high density polyethylene, may be used to fabricate the liners for said one or more containers. Desirable liner materials are processed without requiring co-extrusion or barrier layers, and without any pigments, UV inhibitors, or processing agents that may adversely affect the purity requirements for components to be disposed in the liner. A listing of desirable liner materials include films comprising virgin (additive-free) polyethylene, virgin polytetrafluoroethylene (PTFE), polypropylene, polyurethane, polyvinylidene chloride, polyvinylchloride, polyacetal, polystyrene, polyacrylonitrile, polybutylene, and so on. Exemplary thicknesses of such liner materials are in a range from about 5 mils (0.005 inch) to about 30 mils (0.030 inch), as for example a thickness of 20 mils (0.020 inch).
Regarding the containers for the kits, the disclosures of the following patents and patent applications are hereby incorporated herein by reference in their respective entireties: U.S. Pat. No. 7,188,644 entitled “APPARATUS AND METHOD FOR MINIMIZING THE GENERATION OF PARTICLES IN ULTRAPURE LIQUIDS;” U.S. Pat. No. 6,698,619 entitled “RETURNABLE AND REUSABLE, BAG-IN-DRUM FLUID STORAGE AND DISPENSING CONTAINER SYSTEM;” and U.S. Patent Application No. 60/916,966 entitled “SYSTEMS AND METHODS FOR MATERIAL BLENDING AND DISTRIBUTION” filed on May 9, 2007 in the name of John E. Q. Hughes, and PCT/US08/63276 entitled “SYSTEMS AND METHODS FOR MATERIAL BLENDING AND DISTRIBUTION” filed on May 9, 2008 in the name of Advanced Technology Materials, Inc.
Accordingly, in a further aspect, the invention provides a kit comprising one or more containers having components therein suitable for removing silicon nitride from a microelectronic device, wherein one or more containers of said kit contains components (a), (b), and (c) as set forth herein.
This invention can be further illustrated by the following examples of certain embodiments thereof, although it will be understood that these examples are included merely for purposes of illustration and are not intended to limit the scope of the invention unless otherwise specifically indicated.
Examples
General Procedure
In the experiments shown in Table 1 and Table 2, the composition components were mixed and heated and stirred to a temperature of about 130 to 250° C. For certain examples that depict temperatures above 150° C. , the water is boiling and the method is conducted near or at boiling point. Silicon nitride wafers were cleaned with dilute HF (100:1) for 20 seconds. The TEOS wafers were used as is. Both wafers were measured for baseline film thickness using an ellipsometer. The TEOS wafers were dipped into the heated solution for a period of range of about 30 to 2 hours minutes for TEOS wafers and for about 10 minutes for silicon nitride wafers. The wafers were then rinsed with water having a temperature of about 90° C. for 9 minutes followed by rinsing with room temperature water for about 20 seconds. After drying the wafers with dry nitrogen, the wafers were measured for etch efficiency using an ellipsometer.











TABLE 1









TEST CONDITION
ETCH RATE













temp

Poly
ETCH RATE

















TEST
FORMULATION
time(min)
(° C.)
rpm
TEOS
SiN(A)
SiN(B)
Silicon
SiN/TEOS
SiN(B)/TEOS




















1
85% H3PO4
30*/10
150
360
4.5
37.1


8.2



2
85% H3PO4
30/10/10/5
160
360
6.6
53.3
145
2500
8.1
22


3
85% H3PO4
30/10
165
360
7.3
58


7.9


4
H3PO4 + PPA
30/10
165
360
3
56.4


19



(0.5 wt %) + TPMS


5
H3PO4 + APS
30/10
165
360
0.21
56.4


240.6



(0.8 wt %)


6
H3PO4
30/10
180
360
399.7
11.9


33.7


7
85% H3PO4 + TEA
30/10
180
360
384.3
6.8


56.5



(0.2 wt %) + DMOPSPEDA



(0.45 wt %)


8
85% H3PO4 + TEA
30/10
180
360
364.8
5.9


62.1



(0.2 wt %) + DMOPSPEDA



(0.9 wt %)


9
85% H3PO4 + APST
240/10/60
160
900
0.026

147
8.3

5654



(2.1%) + BAEAPTMOS



(2.6%) + TMAS (0.1%)


10
H3PO4 + HF
2, 2
200
360
134.6
561.2


4.2
4.2



(0.5 wt %)


11
H3PO4 + HF (0.5 wt %) +
2, 2
200
360
25.5
460.0


18.0



triphenylsilanol



(1.5 wt$)


12
H3PO4
30, 10
165
360
2.7
70.3


25.9


13
H3PO4 +
30, 10
165
360
1.3
65.2


521



2-(4-pyridylethyl)triethoxysilane(0.103 mol)


14
H3PO4 + APS(0.103 mol)
120, 10 
165
360
0.35
57.1


1610.1


15
H3PO4 +
30, 10
165
360
0.3
62.2


179.9



m-aminophenyltrimethoxysilane((0.103 mol)


16
H3PO4 +
30, 10
165
360
1.3
68.7


52.0



(aminoethylaminomethyl)phenethyltrimethoxy-



silane(0.103 mol)


17
H3PO4 +
120, 10 
165
360
0.07
58.0


876.7



APS(0.8 wt %) +



HMDSO(1.0 wt %)


18
H3PO4 + APS(0.8 wt %) +
120, 10 
165
360
0.03
56.3


1750.3



HMDSO(3.0 wt %)





*1st value (e.g. 30) refers to TEOS etch time, 2nd value (e.g. 10) - to SiN etch time and the 3rd value if present refers to the Polysilicon etch time


PPA is phenylphosphonic acid


TMPS is trimethoxyphenylsilane


APS is p-aminophenyltrimethoxysilane


TEA is Triethylamine


SiN(A) LPCVD SiN


SiN(B) PECVD SiN


TMAS is Tetramethylammonium silicate


BAEAPTMOS is N-(2-N-Benzylaminoethyl)-3-aminopropyltrimethoxysilane


DMOPSPEDA is 3-(dimethoxy(phenyl)silyl)propyl)ethane-1,2-diamine


Base Solution: H3PO4
















TABLE 2









Performance results
















Addition
TEOS E/R
SiN E/R




#
Reagent
purpose
(Å/min)
(Å/min)
selectivity
















ref. a
non

134.6
561.2
4.2
with 0.5 wt % HF in








200° C.


1a
triphenylsilanol
oxide
25.5
460.0
18.0
1.5 wt % addition




inhibitor



with 0.5 wt % HF in








200° C.


ref. b
non

2.7
70.3
25.9
0.0103 mol








addition (with no








HF) in 165° C.


1b
2-(4-pyridylethyl)
oxide
1.3
65.2
52.1
0.0103 mol



triethoxysilane
inhibitor



addition (with no








HF) in 165° C.


2b
p-aminophenyl
oxide
0.035
57.1
1610.1
0.0103 mol



trimethoxysilane
inhibitor



addition (with no








HF) in 165° C.


3b
m-aminophenyl
oxide
0.3
62.1
179.9
0.0103 mol



trimethoxysilane
inhibitor



addition (with no








HF) in 165° C.


4b
(aminoethylaminomethyl)
oxide
1.3
68.7
52.0
0.0103 mol



phenethyltrimethoxysilane
inhibitor



addition (with no








HF) in 165° C.





Base Solution: H3PO4

## Claims

1. A selective etching composition comprising the reaction product of:
(a) (i) a compound of Formula(I)





wherein A is an aromatic ring or a heteroaromatic ring, and wherein each R1 is the same or different and is chosen from hydrogen, hydroxyl, C1-C20 alkyl, C1-C20 alkylamino, phenyl, benzyl, and C1-C20 alkoxy, phenoxy, and C3-C8 cycloalkyl; x is 0 or 1; each y and y′ may be the same or different and is zero or is chosen from an integer of from 1 to 5; z is an integer chosen from 1, 2, or 3; m is an integer chosen from 1, 2, or 3; w is zero or an integer chosen from 1, 2, 3, or 4 and m+z=4; or
(ii) a compound of Formula (II)


(R1)3Si-M-Si(R1)3   (II)



wherein each R1 is the same or different and is as defined above, and -M- is chosen from —NH— or —O—;
(b) phosphoric acid, comprising at least 50 wt. % of the selective etching composition;
(c) a solvent comprising water; and
(d) a primary, secondary, or tertiary amine, C1-C6 alkanolamine, or dihydrogen phosphate salt thereof, or a nitrogen-containing heterocyclic ring, optionally substituted by with one to three groups chosen from C1-C20 alkyl, C1-C20 alkoxy, —CN, —NO2, C1-C20 alkoxycarbonyl, C1-C20 alkanoyloxy, C1-C20 alkylsulfonyl, hydroxyl, carboxyl, halo, phenyl, benzyl, amino-C1-C20 alkyl, ——C1-C20 alkyl-SO3H, ——C1-C20 alkyl-PO3H2, and groups of the formula —N(R1)2.

2. The selective etching composition of claim 1, wherein the primary, secondary, or tertiary amine is chosen from trimethylamine, triethylamine, tripropylamine, tributylamine, N,N-dimethylaniline, or N-methylaniline.

3. The selective etching composition of claim 1, wherein the compound of Formula (I) has the following structure:




wherein R1 is as defined in claim 1, and each R2 is the same or different and is chosen from H and C1-C20 alkyl.

4. The selective etching composition of claim 1, wherein component (a) is triphenylsilanol.

5. The selective etching composition of claim 1, wherein component (a) is p-aminophenyl trimethoxysilane.

6. The selective etching composition of claim 1, wherein each R1 is the same or different and is chosen from hydroxyl, C1-C20 alkoxy, and C1-C20 alkylamino, and y, y′, and x are zero.

7. The selective etching composition of claim 1, wherein component (a) is a compound of Formula (I), further comprising a compound of Formula (II), wherein R1 is C1-C20 alkyl.

8. The selective etching composition of claim 1 further comprising 3-aminopropylsilane triol and/or tetramethylammonium silicate.

9. The selective etching composition of claim 1, wherein the compound of Formula (I) is chosen from p-aminophenyl trimethoxysilane, triphenyl silanol, and 2-(4-pyridylethyl)triethoxysilane.

10. The selective etching composition of claim 1, wherein the compound of Formula (II) is hexamethyldisiloxane.

11. The selective etching composition of claim 1, further comprising one or more water-miscible solvents which is selected from pyrrolidinones, glycols, amines, and glycol ethers.

12. The selective etching composition of claim 1, further comprising one or more surfactants.

13. The selective etching composition of claim 1, further comprising one or more polymers.

14. A selective etching composition comprising the reaction product of:
(a) (i) a compound of Formula(I)





wherein A is an aromatic ring or a heteroaromatic ring, and wherein each R1 is the same or different and is chosen from hydrogen, hydroxyl, C1-C20 alkyl, C1-C20 alkylamino, phenyl, benzyl, and C1-C20 alkoxy, phenoxy, and C3-C8 cycloalkyl; x is 0 or 1; each y and y′ may be the same or different and is zero or is chosen from an integer of from 1 to 5; z is an integer chosen from 1, 2, or 3; m is an integer chosen from 1, 2, or 3; w is zero or an integer chosen from 1, 2, 3, or 4 and m+z=4; or
(ii) a compound of Formula (II)


(R1)3Si-M-Si(R1)3   (II)



wherein each R1 is the same or different and is as defined above, and -M- is chosen from —NH— or —O—;
(b) phosphoric acid, comprising at least 50 wt. % of the selective etching composition;
(c) a solvent comprising water; and
(d) a fluoride compound chosen from HF; monofluorphosphoric acid; fluorosilicic acid; fluoroboric acid; tetramethylammonium hexafluorophosphate; ammonium fluoride; ammonium bifluoride; quaternary ammonium tetrafluoroborates and quaternary phosphonium tetrafluoroborates having the formula NR′4BF4 and PR′4BF4, respectively, wherein R′ may be the same as or different from one another and is selected from hydrogen, straight-chained, branched, or cyclic C1-C6 alkyl, and straight-chained or branched C6-C10 aryl; tetrabutylammonium tetrafluoroborate (TBA-BF4); cesium fluoride; potassium fluoride; and combinations thereof.