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https://www.nist.gov/laboratories/tools-instruments/nanofab-tool-spts-omega-c2l-rapier-deep-silicon-etcher

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TOOLS & INSTRUMENTS

# NanoFab Tool:  SPTS Omega c2L Rapier Deep Silicon Etcher

The SPTS Omega c2L Rapier deep silicon etcher is an inductively coupled plasma (ICP) etching system used for etching deep features in silicon. The tool uses a fast switching Bosch process that produces smooth sidewall profiles while etching silicon up to 30 μm per minute. The manual load system can accommodate substrates ranging from 100 mm diameter wafers down to small pieces.

## Specifications/Capabilities

                    - Silicon etch rate: up to 30 μm / min.
                    - Etch selectivity:	                       - Silicon to silicon oxide = 100 to 1.
                      - Silicon to photoresist: = 50 to 1.
                    - Inductively coupled plasma (ICP) power source: up to 3000 W at 2.4 MHz.
                    - Process Gases: Ar, N 2 , O 2 , C 4 F 8  and SF 6
                    - Radio Frequency (RF) power source: up to 500 W at 13.56 MHz.

## Usage Information

### Supported Sample Sizes

                      - Maximum wafer diameter: 100 mm (4 in).
                      - Small pieces supported: Yes.

## Typical Applications

                    - Microelectromechanical systems (MEMS).
                    - Nanoelectromechanical systems (NEMS).
                    - Through silicon via (TSV) for three dimensional integration.
                    - Microfluidic devices.

## Back to the NanoFab Equipment List

NanotechnologyNanofabrication / manufacturing

## Organizations

                          - NIST Headquarters
                            - Laboratory Programs
                              - Physical Measurement Laboratory
                                - Physical Measurement Laboratory Office
                                  - Center for Nanoscale Science and Technology

## Details

## Hours of Operation

Cleanroom hours

## Tool Reservation Rules

                    - Minimum Reservation Time: 30 minutes.
                    - Maximum Reservation Time: 4 hours.
                    - Adjacent Reservations Permitted: Yes.
                    - Cancelation Policy: Reservations must be canceled at least 12 hours before the scheduled start time.
                    - Restrictions: Prior to using the etcher, resist masks must be vacuum baked at 100 °C for 30 minutes.

## Contact

### Primary Engineer

                    -  Jessie Zhang  chen.zhang@nist.gov      (301) 975-4565   

### Backup Engineer

                    -  Lei Chen  lei.chen@nist.gov      (301) 975-2908   

### General Contact

                    -      NanoFab Dryetch    nogtech@nist.gov      (301) 975-8672          100 Bureau Drive, Stop 6201   Gaithersburg,  MD 20899-6201   

### HEADQUARTERS

301-975-2000

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