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https://www.nist.gov/laboratories/tools-instruments/nanofab-tool-denton-vacuum-discovery-550-sputtering-system-b104-left

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TOOLS & INSTRUMENTS

# NanoFab Tool: Denton Vacuum Discovery 550 Sputtering System B104 Left

Denton Vacuum Discovery 550 Sputtering System B104 Left

The Denton Vacuum Discovery 550 sputtering system has two direct current (DC) and two radio frequency (RF) sputtering guns which bombard targets, causing atoms to be ejected in order to support a wide range of thin film deposition processes. One DC gun is magnetically enhanced to allow for deposition of ferromagnetic materials. The system has a load lock to minimize contamination and allow fast cycling. It also has a heated, rotating stage for superior stress control and uniformity on substrates ranging from 150 mm diameter wafers down to small pieces.

## Specifications/Capabilities

                    - Loadlock reduces contamination and allows fast cycle times.
                    - Turbo-pumped vacuum chamber has a base vacuum of 2.6 x 10 -5  Pa (2 x 10 -7  Torr).
                    - Rotating stage for high uniformity deposition of thin films.
                    - Stage temperature range: 25 °C to 350 °C.
                    - 600 W DC and RF power supplies.
                    - Two RF and two DC guns.
                    - One DC gun is magnetically enhanced for ferromagnetic materials.
                    - Touch screen user interface; layers can be programmed sequentially.
                    - Co-sputtering capability from one RF and one DC gun.
                    - Argon bombardment can be used to remove native oxide from wafers.
                    - Oxygen and nitrogen available for reactive sputtering.
                    - List of available sputtering targets: Ag, Al, Al/Si(99/01), Al2024, Al2O3, AlN, Au, Co, Cr, Cr (reactive), Cu, Cu/Ni (55/45), Fe, Fe (reactive), Gd, Ge, ITO, Li3PO4, LiCoO2, Mo, Nb, Ni, Ni/Fe(81/19), Pd, Permalloy, Pt, Pyrex 7740, Si, Si(n), Si(p), Si3N4, SiC, SiO2, SiO2(Eu), SnO2, Ta, Ta2O5, Ti, Ti (reactive), TiN, TiO2, V, V2O5, W, W/Ti(90/10), WC, Yb2O3, ZnO, Zr, ZrO2(Yb2O3)

## Usage Information

### Supported Sample Sizes

                      - Maximum wafer diameter: 150 mm (6 in).
                      - Small pieces supported: Yes.

## Typical Applications

                    - Electrical contacts.
                    - Dry etch masks.
                    - Magnetic materials.
                    - Electrical isolation.

## Back to the NanoFab Equipment List

NanotechnologyNanofabrication / manufacturing

## Organizations

                          - NIST Headquarters
                            - Laboratory Programs
                              - Physical Measurement Laboratory
                                - Physical Measurement Laboratory Office
                                  - Center for Nanoscale Science and Technology

## Details

## Hours of Operation

Cleanroom hours

## Tool Reservation Rules

                    - Minimum Reservation Time: 1.5 hours.
                    - Maximum Reservation Time: 6 hours.
                    - Adjacent Reservations Permitted: No.
                    - Cancelation Policy: Reservations must be canceled at least 12 hours before the scheduled start time.
                    - Restrictions:	                       - Some materials are prohibited; contact our engineers for more information.
                      - 24 hour advanced reservation required to ensure required targets are installed.

## Contact

### Primary Engtineer

                    -  Stoyan Jeliazkov  stoyan.jeliazkov@nist.gov      (301) 975-3363   

### Backup Engineer

                    -  Gerard Henein  gerard.henein@nist.gov      (301) 975-5645   

### Backup Engineer

                    -  Marc J. Cangemi  marc.cangemi@nist.gov      (301) 975-5993   

### General Contact

                    -      NanoFab Deposition    nanofab_deposition@nist.gov      (301) 975-8672          100 Bureau Drive, Stop 6201   Gaithersburg,  MD 20899-6201   

### HEADQUARTERS

301-975-2000

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