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https://www.nist.gov/laboratories/tools-instruments/nanofab-tool-fei-helios-nanolab-660-dual-beam-scanning-electron-0

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TOOLS & INSTRUMENTS

# NanoFab Tool:  FEI Helios NanoLab 660 Dual Beam Scanning Electron Microscope (SEM) and Focused Ion Beam (FIB) - FIB1

The FEI Helios 660 dual-beam microscope combines a monochromated field emission scanning electron microscope (FE-SEM) with an advanced focused ion beam (FIB) column for fast, precise nanomachining and nanoscale structural characterization. Enhanced capabilities include nanoscale positioning and *in situ* electrical measurements using a Kleindiek four-probe system with rotating grippers and a dedicated low-noise vacuum feedthrough to take electrical signals from the substrate to a parametric tester located outside of the vacuum chamber. The tool supports a variety of substrates ranging from 150 mm diameter wafers down to small pieces.

## Specifications/Capabilities

                    - FE-SEM	                       - Resolution: sub-nanometer from 1 kV to 30 kV.
                      - High resolution triple in-lens electron detectors with Through Lens (TLD, secondary and backscatter mode), In Column (ICD, low-loss backscatter), and Mirror (MD, no-loss backscatter) detectors.
                      - Scanning transmission electron microscopy (STEM) detector with bright-field (BF), dark-field (DF), and high-angle annular dark-field (HAADF) segments.
                      - Electron beam deceleration for 50 V effective landing voltage.
                      - 5-axis stage with 150 mm X-Y range and full rotation.
                      - Integrated plasma cleaner to minimize contamination.
                    - FIB (Gallium ion source)	                       - Resolution: 2.5 nm at 30 kV.
                      - High current for fast milling of large areas.
                      - High efficiency secondary ion detector.
                      - Electron flood gun for ion charge compensation.
                      - Integrated beam current measurement to allow faster ion beam calibrations while samples are already in the chamber.
                      - Real time monitoring of milling and deposition process.
                      - End point monitoring for cross sectioning and circuit editing applications.
                      - Oxford/Omniprobe 300 manipulator for removing transmission electron microscopy (TEM) samples.
                    - Enhanced capabilities for nanoscale positioning and  in situ  electrical measurements using a Kleindiek four-probe system with rotating grippers and dedicated low-noise vacuum feed through to take electrical signals from the substrate to a parametric tester located outside of the vacuum chamber.
                    - Gas injection system chemistries	                       - Platinum deposition.
                      - Gold deposition.
                      - Tungsten deposition.
                      - Carbon deposition.
                      - Insulator deposition using tetraethyl orthosilicate (TEOS).
                      - Selective carbon etching.
                      - Insulator enhanced etching using xenon difluoride (XeF 2 ).
                    - Software packages	                       - Auto TEM – Automated TEM sample preparation before liftout.
                      - NanoBuilder – Advanced computer aided design (CAD) based patterning using GDSII files.
                      - Auto Slice and View – Automated sequential milling and image capture generates datasets for 3D reconstruction.
                      - EBS3 – captures EBSD data during sequential milling.
                      - Aztec – User-friendly EDS/EBSD data collection and analysis software.
                      - Avizo Fire – 3D reconstruction software with additional tools for materials science applications.

## Usage Information

### Supported Sample Sizes

                      - Maximum wafer diameter: 150 mm (6 in).
                      - Holders for 100 mm, 125 mm, and 150 mm diameter wafers.
                      - Small pieces supported: Yes.

## Typical Applications

                    - Nanometer scale patterning.
                    - 3D tomography.
                    - Materials characterization.
                    - Prototyping of nanoscale devices.
                    - In situ  electrical measurements.
                    - Preparation of TEM lamellae.
                    - Sample preparation for atom probe tomography.
                    - Failure analysis.
                    - Circuit editing.

## Back to the NanoFab Equipment List

## Organizations

                          - NIST Headquarters
                            - Laboratory Programs
                              - Physical Measurement Laboratory
                                - Physical Measurement Laboratory Office
                                  - Center for Nanoscale Science and Technology

## Details

## Hours of Operation

24/7 access

## Tool Reservation Rules

                    - Minimum Reservation Time: 30 minutes
                    - Maximum Reservation Time: 8 hours
                    - Adjacent Reservations Permitted: Yes
                    - Cancellation Policy: Reservations must be canceled at least 12 hours before the scheduled start time.

## Contact

### Primary Engineer

                    -  Joshua Schumacher  joshua.schumacher@nist.gov      (301) 975-8065   

### Backup Engineer

                    -  Kerry Siebein  kerry.siebein@nist.gov      (301) 975-8458   

### General Contact

                    -      NanoFab Microscopy    nanofab_microscopy@nist.gov      (301) 975-8672          100 Bureau Drive, Stop 6201   Gaithersburg,  MD 20899-6201   

## Hourly Rates

## Training Rates

### FEI FIB 1

## Training Time

### HEADQUARTERS

301-975-2000

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