SRI 6012 series Page 1 of 2 

 National Institute of Standards & Technology 

Specifications 

Standard Reference Instrument Series 6012 

Precision Semiconductor Nanostructures 

Description: Precision semiconductor nanostructure arrays are grown by molecular beam 

epitaxy on a prepatterned substrate. Following buffer layer deposition, the substrate is coated 

with a mask layer that allows selective regrowth in areas where the mask has been removed. 

Lithographic processing controls the placement and diameter of subsequent nanostructure 

regrowth. 

Design, fabrication, and technical measurements leading to the production of this SRI were 

performed by M. D. Brubaker, T. E. Harvey, and K. A. Bertness, NIST Applied Physics Division. 

Support aspects involved in the issuance of this SRI were coordinated through the NIST Office of 

Reference Materials.

Specifications: Standard nanowire array wafers consist of 9 die each with area 1 cm by 1 cm with 

the center die at the wafer center. With the substrate oriented to have the major flat at the bottom, 

the center die is designated x0y0 and the upper right die is x1y1, with x being the horizontal 

coordinate. 

 Test die: Die x-1y-1 is for test structures consisting of a pitch-diameter array of 6 rows 

and 10 columns of 50 μm square subarrays with nanostructures on a square grid. Nominal 

dimensions are marked with lettering next to the rows and columns. 

 The remaining die are laid out in a hexagonal grid of 1000 x 1000 nanowires with fixed 

spacing, diameter and length selected from the following range of nanowire dimensions 

(see figure on page 3): 

o Nanowire diameter (flat-to-flat): 130 nm to 300 nm 

o Nanowire length: 500 nm to 10 μm, uniform across all arrays on wafer 

o Nanowire center-to-center spacing: Close (500 nm) or Wide (5 μm) 

 Nanostructure arrays are grown on silicon substrates with (111) orientation, with patterns 

oriented such that the major flat is aligned with the bottom edge of the pattern. Options b 

and d substitute GaN-based substrates for silicon. 

 Nathan R. Newbury, Chief 

 Applied Physics Division 

 Steven J. Choquette, Director 

 Office of Reference Materials 

Certificate Issue Date: November 14, 2017 Gaithersburg, MD 20899 
SRI 6012 series Page 2 of 2 

Standard Configurations: 

6012a Nanostructure arrays on MBE-grown buffer 

6012b Nanostructure arrays without buffer 

6012c Nanostructure extended arrays on MBE-grown buffer 

6012d Nanostructure extended arrays without buffer 

This SRI is certified with a NIST Special Calibration Test, Dimensional Measurement of 

Nanostructures, 15510S. Customers will receive a calibration Test Report identifying specific 

nanostructures on the SRI with critical dimensions measured with traceability to NIST RM 8820, 

Scanning Electron Microscope Scale Artifact. 

Delivery: Delivery dates will be determined on a case-by-case basis in coordination with the 

customer and based on the availability of components and NIST staff. 

Shipping: The SRI will be packed and shipped per the customer’s needs, and all packing and 

shipping will be handled through the NIST Boulder Calibration Services Office. Shipping crate 

dimensions and weight will be included in each quote. Customers are responsible for 

arrangement of shipping pickup at NIST as well as all customs duties and import fees. 

Users of this SRI should ensure that the Specifications Certificate in their possession is current. This can be accomplished by contacting 

the Office of Reference Materials: telephone (301) 975-2200; fax (301) 948-3730; e-mail srminfo@nist.gov; or via the Internet at 

http://www.nist.gov/sri.

nanowire

length

(above 

mask)

mask 

substrate and buffer 

diameter horizontal pitch

vertical 

pitch

horizontal pitch

vertical 

pitch

Hexagonal Grid – Top View

Rectangular Grid – Top View Side View

Hexagonal Grid – Perspective