NANOFAB TOOL USAGE RATES

Tool Usage 

Standard 

Rate

Tool Usage 

Reduced 

Rate

Minimum 

Usage 

Charge

$/Hour $/Hour $

JEOL E-beam JBX 6300-FS Directly pattern a variety of substrate materials with feature sizes as small 

as 10 nm. 2 nm spot size, 50 MHZ write speed, 200 mm loadable. E 400 216 216

JEOL E-beam JBX 6300-FS Directly pattern a variety of substrate materials with feature sizes as small 

as 10 nm. 2 nm spot size, 50 MHZ write speed, 200 mm loadable. C 422 228 228

ASML Stepper PAS 5500/275 High throughput 5x projection I-Line lithography; < 300 nm resolution; 3D 

backside alignment, 200 mm loadable, 22 mm x 27 mm field size. C 324 175 88

ASML Stepper PAS 5500/275 Design Station Provides ability to load jobs outside of cleanroom. C 130 70 18

Nanonex NX-2000 Nano-imprinter UV and thermal large area imprint, features down to 10 nm. C 180 97 49

Heidelberg DWL-2000 Laser Writer Less than 1 um resolution, greyscale writing modes,backside alignment 

capable, direct substrate write or mask exposure. C 126 68 34

Heidelberg MLA-150 Maskless Aligner Maskless aligner, 1 um resolution, up to 200 mm substrate. C 83 45 12

Suss MA6 Contact Lithography I or G line contact exposure with front and back side alignment, 1 um 

resolution, up to 150 mm substrate. C 80 43 11

Suss MA8 Contact Lithography I or G line contact exposure, 1 um resolution, up to 200 mm substrate. C 80 43 11

Suss Microtec Delta12AQ Resist Developer Automated photoresist developer station which supports temperature 

controlled spray photoresist development on substrates up to 200 mm. C 93 50 13

Suss Microtec ACS200 Resist Coater

Automated photoresist coat and bake station with cassette-to-cassette 

operation on substrates up to 200 mm. Supports spray coating and spin 

coating processes. 

C 93 50 13

CEE Apogee Spinner; A102, A103, A104 Uniformly apply and bake photoresist on substrates ranging from 200 mm 

diameter wafers down to small pieces. C 43 23 6

4Wave Cluster Sputter System

Physical deposition capability using the ion beam deposition or biased 

target deposition techniques resulting in the densest available thin films 

deposited at room temperature on substrates up to 200 mm.

C 180 97 49

Denton Discovery 550 Loadlock

RF and DC sputtering of over 30 metal and dielectric targets provided, 

magnetically enhanced gun, up to 600 W, heated stage to 350 °C, cosputtering available, wafer pre-sputter, oxygen and nitrogen available for 

reactive sputtering. Loadlock for fast cycling.

C 163 88 22

Denton Infinity 22

Thermal and E-beam evaporation of over 30 metal and dielectric sources 

provided, co-evaporation available, ion assist, ion wafer clean, fast cycle 

under 30 minute pumpdown.

C 128 69 35

Denton Bench Top Turbo

The compact thermal evaporator system is used to coat electron-beam 

resists with thin conductive, charge dissipation, Aluminum layer on 

substrates ranging from small pieces up to 100 mm.

C 128 69 35

Speciality Coatings PDC-2012 Parylene 

Deposition Parylene N or C only, thickness to tens of microns. C 130 70 35

Oxford FlexALRPT Atomic Layer Deposition Thermal and plasma ALD Processes for platinum, silicon oxide, aluminum 

oxide, titanium oxide, and halfnium oxide, up to 200 mm substrates. C 143 77 39

Plasma-Therm Versaline High Density 

PECVD

Low temperature deposition of oxide, nitride and amorphous silicon thin 

films, up to 200 mm substrates. C 135 73 37

SPTS Omega c2L Deep Silicon Etcher High aspect ratio deep silicon etching on wafers up to 200 mm. "Bosch" 

process capability with higher etch rates and smoother feature sidewalls. C 159 86 43

Unaxis Shuttleline Deep Si Etcher Bosch process capability 1 um per minute to 15 um per minute with high 

selectivity (> 100:1 silicon oxide, > 40:1 photoresist). C 122 66 33

Unaxis Shuttleline ICP Etcher Inductively coupled plasma (ICP) chlorine and fluoring etching on 

substrates up to 150 mm. C 130 70 35

Oxford PlasmaLab 100

Chlorine or fluorine etching especially suited to III-V, metals, and 

anisotropic silicon etching, cryogenic and high temperature etch capability -

150 °C to 400 °C, up to 200 mm wafer capable.

C 130 70 35

Unaxis 790 RIE Three general fluorine reactive ion etching systems for dielectrics and 

metals. C 106 57 29

4Wave Ion Mill

Argon ion milling of metals and dielectrics (150 mm wafer maximum), large 

22 cm ion source provides < 1% non-uniformity, low base pressure, fast 

cycle, SIMS endpoint detection, reactive ion beam etch capable with 

oxygen and fluorocarbons.

C 126 68 34

XeF2 Silicon Etcher High rate silicon removal for mems release etch. C 359 194 97

SPTS μEtch HF Vapor Etcher A combination of liquid hydrofluoric acid and alcohol isotropically etches 

silicon dioxide while not etching silicon. Substrates up to 200 mm. C 94 51 13

Microwave Asher Polymer removal and surface clean. C 81 44 11

FEI Titan Analytical TEM

Information Limit 0.10 nm, STEM resolution 0.14 nm, 80 kV to 300 kV, 

Gatan Orius 2k x 2k digital camera, Fischione HAADF STEM detector, 

Gatan GIF for EELS and EFTEM, EDAX EDS for elemental detection and 

mapping. Tomography acquisition, reconstruction, and analysis software.

E 167 90 90

Zeiss Ultra 60 Field Emission SEM

1.5 nm resolution, 1 keV to 30 keV, Oxford EDS for detection and mapping 

of elements beryllium and heavier, in lens and Everhart Thornley secondary 

detectors, and in lens energy selective and four quad backscatter 

detectors, up to 150 mm wafers.

C 122 66 33

Gemini 500 Field Emission SEM

0.5 nm resolution, 20 V to 30 kV, high efficiency in lens and Everhart 

Thornley secondary electron detector, and energy selective back scatter 

(EsB) detector for backscatter electron imaging at low voltages samples 

ranging from small pieces up to 100 mm wafers.

C 122 66 33

Fischione 1040 NanoMill Low Energy Ion Mill Low energy ion mill for final thinning of TEM specimens. E 61 33 9

Leica EM GP Preparation of samples for cryo-TEM. E 46 25 7

Bruker Fast Scan AFM

Wafer scale AFM capability on wafers up to 200 mm for fast scanning of 

multiple sites on a wafer. Contact, tapping, and phase imaging modes, up 

to 200 mm substrates, electrostatic force microscopy, magnetic force 

microscopy.

C 133 72 18

Asylum Cypher High Resolution AFM

High resolution AFM capability on wafers up to 20 mm for multipurpose 

research applications. Contact, tapping, and phase imaging modes, 

electrostatic force microscopy, magnetic force microscopy.

E 130 70 18

Veeco Dimension 3100 Atomic Force 

Microscope

Contact, tapping, and phase imaging modes, up to 200 mm substrates, 

electrostatic force microscopy, magnetic force microscopy. C 120 65 17

FEI Helios 660 Dual Beam FIB/SEM

SEM Imaging resolution < 1 nm from 1 kV to 30 kV, FIB resolution 2.5 nm 

at 30 kV, STEM detector, beam deceleration for insulating samples, 

Kleindiek in-situ probe system for nanopositioning and electrical 

measurement, MultiChem gas injection system supports platinum, 

tungsten, gold, carbon, insulator deposition and selective carbon and 

insulator enhanced etch, slice and view 3D reconstruction, TEM lamella 

prep, circuit editing, wafers up to 150 mm.

E 306 165 83

FEI Helios 660 Dual Beam FIB/SEM

SEM Imaging resolution < 1 nm from 1 kV to 30 kV, FIB resolution 2.5 nm 

at 30 kV, STEM detector, integrated Oxford EDS and EBSD for detection 

and mapping of elements and crystallography, beam deceleration for 

insulating samples, gas injection system supports platinum, carbon, 

insulator deposition and selective carbon and insulator enhanced etch, 

Slice and View 3D reconstruction, TEM lamella prep, circuit edit, wafers up 

to 150 mm.

E 306 165 83

Imaging and 

Analysis

Description

Location

Category Tool

Lithography

Physical Vapor 

Deposition

Chemical 

Vapor 

Deposition

Dry Etch

Focused Ion 

Beams

12/14/2020
NANOFAB TOOL USAGE RATES

Tool Usage 

Standard 

Rate

Tool Usage 

Reduced 

Rate

Minimum 

Usage 

Charge

$/Hour $/Hour $

Wyatt Dawn Heleos II DLS

Nanoparticle characterization system integrates several methods of field 

flow fractionation and light scattering to separate and measure 

nanoparticles in solution. 

E 46 25 7

Rigaku SmartLab 9kW X-Ray Diffraction

High resolution multipurpose x-ray diffractometer, 9 kW rotating anode xray generator, high temperature measurements up to 1100 °C in air, 

vacuum, and inert gas; measurements including film thickness, roughness, 

density, crystallographic texture, and film and crystal quality measurements.

E 141 76 38

Sensofar Optical Profilometer Measure height variations including step heights and roughness across a 

surface using light on substrates ranging from small pieces up to 200 mm. C 134 72 18

Suss Microtec SB6e Wafer Bonder Thermal, pressure and anodic bonding with vacuum or over-pressure 

condition. E 217 117 59

Tousimis Critical Point Dryer Drying of high aspect ratio fragile structures on pieces up to 150 mm 

wafers. C 130 70 18

Tousimis Critical Point Dryer Drying of high aspect ratio fragile structures on small piece samples. C 98 53 14

IPEC 472 CMP Chemical Mechanical Polisher for SiO2, Si, Au, Si3N4 on whole wafers 100 

mm, 150 mm, and 200 mm. E 210 105 53

GnP 412S Wafer Cleaner Post Chemical Mechanical Polish clean on 100 mm, 150 mm, and 200 mm 

substrates E 100 50 25

Yield Engineering Silanization Oven Silanization tool provides users the capability to automatically clean and 

silanize substrates for PDMS processes. E 65 35 9

CorSolutions Microfluidic Test Station Integrated microfluidic station provides capability to test microfluidic 

devices with constant flow rate and pressure. E 65 35 9

Sandvik Wet/Dry Oxidation Furnace Pyrogenic and oxygen oxidation of silicon up to 1200 °C. C 196 106 53

Sandvik Anneal Furnace Forming gas sinter, and anneal in N2, O2 and Ar up to 1200 °C. C 98 53 27

Sandvik Silicon Nitride Low Pressure CVD Low stress and stoichometric silicon nitride deposition. C 128 69 35

Sandvik Polysilicon Low Pressure CVD N-Doped and undoped polysilicon deposition. C 141 76 38

Sandvik Oxide Low Pressure CVD TEOS and Low temperature oxide deposition. C 133 72 36

AnnealSys RTA 200 °C/s ramp rate up to 1500 °C in N2, O2, Ar, forming gas, 760 Torr to 5 

mTorr. C 151 81 41

SSEC Single wafer acid spray clean tools CMOS and general tools for RCA and Piranha clean of single substrates 

ranging from 200 mm diameter wafers down to small pieces. C 50 27 5

Microprocess Avenger Solvent Liftoff Heated spray solvent liftoff, dry in dry out processing, substrates up to 150 

mm. C 141 76 13

Disco 341 Dicing Saw Wafer dicing (200 mm wafer maximum). E 94 51 26

K&S 4526 Wire Bonder Manual wire bonder for electrical interconnect. Two dedicated systems for 

gold and aluminum wire usage. E 126 68 34

Tresky T-3000-FC3-HF Flip Chip Bonder Eutectic, ultrasonic, thermal, and epoxy bonding, 1 um positioning 

accuracy, substrates up to 40 mm thick and 150 mm diameter. E 139 75 38

Dynatex GSX Scribe and Break

The GSX performs high precision diamond scribe and break dry dicing for 

materials such as Indium Phosphide, Gallium Arsenide, Gallium Nitride, 

and silicon in partial wafer pieces and substrate sizes up to 100 mm. It can 

be operated in an interactive or semi-automatic mode for operator 

controlled processing.

E 78 40 20

Cleanroom Occupancy Rate

Clean room entrance fee includes gowning, most wet chemistry, and 

metrology including:

Toho Tech FLX-2320 Laser Film Stress Measurement

Firsttenangstroms FTA32 Contact Angle Goniometer

Woollam XLS-100 Spectroscopic Ellipsometer

Filmetrics reflectometer

Bruker Dektak XT surface profilometer

Four Dimensions four point probe

Microscopic and Macroscopic Optical imaging and inspection

Keithley 4200 Parametric test with capacitance, pulse, and high current 

modes.

67 36

Soft Lithography Lab Dedicated tool set for soft lithography processing. 46 25

Processing Services Engineer

NanoFab Engineers can perform process development and run complex 

processes on your behalf in the NanoFab including mask layout with or 

without you present.

150 150

Access

Note: Location 'C' indicates that the tool is located inside of the cleanroom and incurs the clean room occupancy fee in addtion to the tool rate.

Location 'E' indicates that the tool is located outside of the cleanroom.

Category Tool Description

Location

Metrology

Speciality 

Tools

Soft 

Lithography

Furnaces

Wet Chemistry

Packaging

12/14/2020
NANOFAB TOOL TRAINING RATES

Typical 

Training Time

Individual 

Training Rate

Group Training 

Rate

Hours $/Hour $/Hour

JEOL E-beam JBX 6300-FS 6 $366.00 $183.00 

JEOL E-beam JBX 6300-FS 6 $378.00 $189.00 

ASML Stepper PAS 5500/275 6 $325.00 $163.00 

ASML Stepper PAS 5500/275 Design Station 6 $220.00 $110.00 

Nanonex NX-2000 Nano-imprinter 3 $247.00 $124.00 

Heidelberg DWL-2000 Laser Writer 4 $218.00 $109.00 

Heidelberg MLA-150 Maskless Aligner 4 $195.00 $98.00 

Suss MA6 Contact Lithography 4 $193.00 $97.00 

Suss MA8 Contact Lithography 4 $193.00 $97.00 

Suss Microtec Delta12AQ Resist Developer 2 $200.00 $100.00 

Suss Microtec ACS200 Resist Coater 2 $200.00 $100.00 

CEE Apogee Spinner; A102, A103, A104 1 $173.00 $87.00 

4Wave Cluster Sputter System 4 $247.00 $124.00 

Denton Discovery 550 Loadlock 2 $238.00 $119.00 

Denton Infinity 22 2 $219.00 $110.00 

Denton Bench Top Turbo 1 $219.00 $110.00 

Speciality Coatings PDC-2012 Parylene Deposition 1 $220.00 $110.00 

Oxford FlexALRPT Atomic Layer Deposition 2 $227.00 $114.00 

Plasma-Therm Versaline High Density PECVD 1 $223.00 $112.00 

SPTS Omega c2L Deep Silicon Etcher 2 $236.00 $118.00 

Unaxis Shuttleline Deep Si Etcher 2 $216.00 $108.00 

Unaxis Shuttleline ICP Etcher 2 $220.00 $110.00 

Oxford PlasmaLab 100 2 $220.00 $110.00 

Unaxis 790 RIE 2 $207.00 $104.00 

4Wave Ion Mill 2 $218.00 $109.00 

XeF2 Silicon Etcher 1 $344.00 $172.00 

SPTS μEtch HF Vapor Etcher 1 $201.00 $101.00 

Microwave Asher 0.5 $178.00 $89.00 

FEI Titan Analytical TEM 40 $240.00 $120.00 

Zeiss Ultra 60 Field Emission SEM 4 $216.00 $108.00 

Gemini 500 Field Emission SEM 4 $216.00 $108.00 

Fischione 1040 NanoMill Low Energy Ion Mill 2 $183.00 $92.00 

Leica EM GP 2 $175.00 $88.00 

Bruker Fast Scan AFM 2 $222.00 $111.00 

Asylum Cypher High Resolution AFM 2 $220.00 $110.00 

Veeco Dimension 3100 Atomic Force Microscope 2 $215.00 $108.00 

FEI Helios 660 Dual Beam FIB/SEM 5 $315.00 $158.00 

FEI Helios 660 Dual Beam FIB/SEM 5 $315.00 $158.00 

Wyatt Dawn Heleos II DLS 6 $175.00 $88.00 

Rigaku SmartLab 9kW X-Ray Diffraction 4 $226.00 $113.00 

Sensofar Optical Profilometer 1 $222.00 $111.00 

Suss Microtec SB6e Wafer Bonder 4 $267.00 $134.00 

Tousimis Critical Point Dryer 1 $220.00 $110.00 

Tousimis Critical Point Dryer 1 $203.00 $102.00 

IPEC 472 CMP 3 $255.00 $128.00 

GnP 412S Wafer Cleaner 3 $200.00 $100.00 

Yield Engineering Silanization Oven 2 $185.00 $93.00 

CorSolutions Microfluidic Test Station 2 $185.00 $93.00 

Sandvik Wet/Dry Oxidation Furnace 1 $256.00 $128.00 

Sandvik Anneal Furnace 1 $203.00 $102.00 

Sandvik Silicon Nitride Low Pressure CVD 1.5 $219.00 $110.00 

Sandvik Polysilicon Low Pressure CVD 1.5 $226.00 $113.00 

Sandvik Oxide Low Pressure CVD 1.5 $222.00 $111.00 

AnnealSys RTA 1.5 $236.00 $118.00 

SSEC Single wafer acid spray clean tools 1 $177.00 $94.00 

Microprocess Avenger Solvent Liftoff 1 $226.00 $113.00 

Disco 341 Dicing Saw 3 $201.00 $101.00 

K&S 4526 Wire Bonder 1 $218.00 $109.00 

Tresky T-3000-FC3-HF Flip Chip Bonder 2 $225.00 $113.00 

Dynatex GSX Scribe and Break 1 $190.00 $95.00 

All Other Tools Varies $150.00 $75.00 

Typical training times cover general tool operation and can vary depending on previous experience and aptitude. Application specific 

training beyond general tool usage will require additional training time and should be discussed with process engineer prior to training. 

Speciality Tools

Furnaces

Wet Chemistry

Packaging

Imaging and 

Analysis

Lithography

Soft Lithography

Physical Vapor 

Deposition

Chemical Vapor 

Deposition

Dry Etch

Category Tool

Focused Ion 

Beams

Metrology

12/14/2020