Cover photo: Deep Space Radiofrequency (RF) 

Communication Scenario.
—I—

NASA’s mission to pave the future of space exploration through innovations 

in science and technology is reflected in a balanced technology development 

and maturation program supported by all NASA Mission Directorates. 

Stimulating technology innovation through Small Business Innovation 

Research (SBIR)/Small Business Technology Transfer (STTR) programs, NASA 

has empowered U.S. small businesses to make significant contributions to 

the future of space exploration.

This technology investment portfolio highlights SBIR Phases I and II 

investments in radiofrequency (RF) communication technology development 

for the Space Operations Mission Directorate (SOMD)/Human Exploration 

and Operations Mission Directorate (HEOMD) from 2006 to 2014. This report 

summarizes technology challenges addressed and advances made by the 

SBIR community in RF technology. The goal of this document is to encourage 

program and project managers, stakeholders, and prime contractors to take 

advantage of these technology advancements to leverage their own efforts 

and to help facilitate infusion of technology advancements into future NASA 

projects. A description of NASA’s SBIR Program can be found at www.sbir.

nasa.gov.

Foreword
—II—

Small Busin

Innovation Resea
—III—

The Small Business Innovation Research (SBIR) Program provides opportunities for small, hightechnology companies to participate in Government-sponsored research and development efforts in 

key technology areas of interest to NASA. The SBIR Program provides significant sources of seed 

funding to foster technology innovation. The SBIR Phase I contracts are awarded for 6 months with 

funding up to $125,000; Phase II contracts are awarded for 24 months with funding up to $750,000. 
—IV—

Human Exploratio
—V—

The Human Exploration and Operations Mission Directorate (HEOMD) is chartered with the development 

of core transportation elements, key systems, and enabling technologies required for beyond-low-Earthorbit (LEO) human exploration that will provide the foundation for the next half-century of American 

leadership in space exploration.

This new space exploration era starts with increasingly challenging test missions in cislunar space, 

including flights to the Lagrange points, followed by human missions to near-Earth asteroids (NEAs), 

the Moon, the moons of Mars, and Mars as part of a sustained journey of exploration in the inner 

solar system. HEOMD was formed in 2011 by combining the Space Operations Mission Directorate 

(SOMD) and the Exploration Systems Mission Directorate (ESMD) to optimize the elements, systems, 

and technologies of the precursor directorates to the maximum extent possible. 

HEOMD mission goals include key technology developments in Space Communications and Navigation, 

Space Transportation, Human Research and Health Maintenance, Radiation Protection, Life Support 

and Habitation, High-Efficiency Space Power Systems, and Ground Processing/International Space 

Station (ISS) Utilization. 

HEOMD looks forward to incorporating SBIR-developed technologies into current and future systems 

to contribute to the expansion of humanity across the solar system while providing continued costeffective space access and operations for its customers, with a high standard of safety, reliability, and 

affordability. 

and

Operations Mis

Directorat
—VI—

SCaN: Keeping t

SCaN Notional Integrated Network Archite
—VII—

Universe Connec

Program and Technology Development 

The Space Communications and Navigation (SCaN) Program resides within HEOMD and is responsible for the development of 

technologies and capabilities to support all current and future NASA missions. The SCaN Program provides the communication, 

navigation, and mission science data transfer services that are vital to the successful operation of NASA space flight missions. To 

accomplish this, SCaN operates three networks: the Deep Space Network (DSN), the Near Earth Network (NEN), and the Space 

Network (SN). Combined together, the services and network assets provide capabilities that enable space exploration for over 

100 NASA and non-NASA missions. SCaN also provides scheduling services to new missions through the Network Integration 

Management Office (NIMO) and Deep Space Network Commitment Office (DSNO). 

To accomplish the above, the SCaN Program’s vision is to build and maintain a scalable, integrated, and mission support 

infrastructure that can evolve to accommodate new and changing technologies, while providing comprehensive, robust, 

cost effective, and exponentially higher data rate services to enable NASA’s science and exploration missions. Today NASA 

communication and navigation capabilities using radiofrequency technology can support spacecraft to the fringes of the solar 

system and beyond. The anticipated new missions for science and exploration of the universe are expected to challenge the 

current data rates of 300 Mbps in LEO and of 6 Mbps at Mars to rise significantly. The SCaN Program aims to

•	 Develop a SCaN infrastructure capable of meeting both robotic and human exploration mission needs. 

•	 Evolve infrastructure to provide the highest data rates feasible. 

•	 Develop internationally interoperable data communications protocols for space missions. 

•	 Offer communications and navigation infrastructure for lunar and Mars surfaces. 

•	 Offer communications and navigation services to enable lunar and Mars human missions.

SCaN technology development interests include optical communications, advanced antenna technology and Earth stations, 

cognitive networks, access links, reprogrammable communications systems, spacecraft positioning, navigation, and timing (PNT), 

and communications in support of launch services. Innovative solutions to operational issues are needed in all of the areas. 

Emphasis is placed on size, weight, and power improvements. All SBIR technologies developed under the SCaN topic area are 

aligned with the SCaN Program technical directions.

This document catalogs SCaN SBIR investments in radiofrequency (RF) communication technology development from 

2006 to 2014.
—VIII—

SBIR Phse I
—IX—

Conte

Radiofrequency (RF) Communication Technology 1

Radiofrequency (RF) Communication Technology SBIR Phase I Awards (2006 to 2014) 4

Solid-State Power Amplifiers (SSPAs) Using Reduced Conduction Angle Techniques on Wide-Bandgap Devices for Ultra-High Efficiency 4

Hittite Microwave Corporation

Integrated Monolithic Microwave Integrated Circuit (MMIC) for Phase-Locked Oscillators and Frequency Synthesizers 5

Hittite Microwave Corporation

Reconfigurable Miniature Transponder for Multimode L-, S-, and X-Band Space Communication 6

Space Micro, Inc.

Development of Epitaxial Gallium Nitride (GaN) Films for Radiofrequency (RF) Communications 

Neocera, LLC

Integrated Production of Ultra-Low Defect Gallium Nitride (GaN) Films and Devices for High-Power Amplifiers 8

SVT Associates 

Monolithic Microwave Integrated Circuits (MMICs) for High-Efficiency Ka-Band Gallium Nitride (GaN) Power Amplifiers. 

Hittite Microwave Corporation 

Three-Dimensional (3D) Microfabricated Low-Loss Reconfigurable Components 10

Nuvotronics, LLC

A 60 to 85% Efficient X- and K-Band 1-Kilowatt Solid-State Power Amplifier (SSPA) Using Gallium Nitride (GaN)-on-Diamond 11

Group 4 Labs, LLC

High-Power Wide-Bandgap Engineered Millimeter-Wave (MMW) Monolithic Microwave Integrated Circuit (MMIC) Transceiver 12

TLC Precision Wafer Technology, Inc.

Nanoparticle Scandate Cathode for Space Communications .

ebeam, Inc.

Gallium Nitride (GaN) Bulk Growth and Epitaxy from Ca-Ga-N Solutions .

The IIIAN Company, LLC

DD-Amp for Deep Space Communications 15

MaXentric Technologies

High-Efficiency, High-Power Ka-Band Elliptic-Beam Traveling-Wave-Tube Amplifier (TWTA) for Long-Range Space

Radiofrequency (RF) Telecommunications .

Beam Power Technology, Inc.

Size, Weight and Power (SWaP) Optimized Space Transceivers 17

Nuvotronics, LLC

X-Band Gallium Nitride (GaN) Power Amplifiers (PAs) for Long-Range Space Radiofrequency (RF) Telecommunications 18

Nitronex Corporation
—X—

SBIR Phse I

Continue
—XI—

High-Power X- and Ka-Band Gallium Nitride (GaN) Amplifiers With Exceptional Efficiency 19

Auriga Measurement Systems (Auriga Microwave)

Klystron Amplifier Utilizing Scandate Cathode and Electrostatic Focusing 20

ebeam, Inc.

Self-Biased Radiation Hardened Ka-Band Circulators for Size, Weight, and Power-Restricted Long-Range Space Applications 21

Metamagnetics, Inc.

Millimeter-Wave (MMW) Intersatellite Transceiver .

MaXentric Technologies, LLC

Radiation Hard Multichannel Aluminum Nitride (AlN)/Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) for HighEfficiency X- and Ka-Band Power Amplifiers 23 

Agnitron Technology 

High-Efficiency, Ka-Band Solid-State Power Amplifier (SSPA) Utilizing Gallium Nitride (GaN) Technology .

QuinStar Technology, Inc.
—XII—

SBIR Phse I
—XIII—

Contents (Conti

Radiofrequency (RF) Communication Technology 1

Radiofrequency (RF) Communication Technology SBIR Phase II Awards (2006 to 2014) 25

Integrated Production of Ultra-Low Defect Gallium Nitride (GaN) Films and Devices for High-Power Amplifiers 26

SVT Associates 

Three-Dimensional (3D) Microfabricated Low-Loss Reconfigurable Components 27

Nuvotronics, LLC

Nanoparticle Scandate Cathode for Space Communications Phase 2 28

e-beam, inc.

Gallium Nitride (GaN) Bulk Growth and Epitaxy From Ca-Ga-N Solutions .

The IIIAN Company, LLC 

X-Band Gallium Nitride (GaN) Power Amplifiers for Long-Range Space Radiofrequency (RF) Telecommunications 30

Nitronex Corporation

Self-Biased Radiation-Hardened Ka-Band Circulators for Size, Weight, and Power-Restricted Long-Range Space Applications 31

Metamagnetics, Inc.

Company Names .

SBIR Points of Contact 34
—XIV—

Radiofrequency (

Communication

Technolog

Cassini Spacecraft

Orbiting Saturn.
—1—

In the future, robotic and human exploration spacecraft with increasingly capable instruments producing large quantities of data 

will be visiting the Moon and the planets. These spacecraft will also support long duration missions, such as to the outer planets, 

or extended missions with new objectives. They will possess reconfigurable avionics and communication subsystems and will be 

designed to require less intervention from Earth during periods of low activity. Concurrently, the downlink data rate demands from 

Earth science spacecraft will be increasing. The communication needs of these missions motivate higher data rate capabilities 

on the uplink and downlink, as well as more reliable RF and timing subsystems. Innovative long-range telecommunications 

technologies that maximize power efficiency, reliability, receiver capability, transmitted power, and data rate, while minimizing 

size, mass, and direct current (DC) power consumption are required. The current state of the art in long-range RF deep space 

telecommunications is 6 Mbps from Mars using microwave communications systems (X and Ka-band) with output power levels in 

the low tens of Watts and DC-to-RF efficiencies in the range of 10 to 25%. Due to the applicability of communication components 

and subsystems with science instruments such as radar, technologies that can benefit both RF communication and advanced 

instruments are within the scope of this subtopic.

Technologies of interest:

•	 Ultra-small, lightweight, low-cost, low-power, modular deep space and near-Earth transceivers, transponders, amplifiers, and 

components, incorporating monolithic microwave integrated circuits (MMICs), microelectromechanical system (MEMs), and Bi-CMOS 

circuits.

•	 MMIC modulators with drivers to provide a wide range of linear phase modulation (greater than 2.5 rad), high-data-rate (10 to 200 

Mbps) BPSK/QPSK modulation at X-band (8.4 GHz), and Ka-band (26, 32, and 38 GHz).

•	 High DC-to-RF-efficiency (>60%), low-mass solid-state power amplifiers (SSPAs), of both continuous wave (CW) medium output power 

(10 to 15 W) and CW high-output power (15 to 35 W), using power combining and/or wide-bandgap semiconductors at X-band (8.4 

GHz) and Ka-band (26, 32, and 38 GHz).

•	 Solid-state multifunction modules that can be commanded to toggle between amplifying conventional digital modulation format signals 

for communications to pulsed operation for synthetic aperture radar (SAR) with resolution on the order of a few meters.

•	 Ultra-low-noise amplifiers (MMICs or hybrid, uncooled) for RF frontends (<50 K noise temperature).

•	 High dynamic range (>65 dB), data rate receivers (>20 Mbps) supporting BPSK/QPSK modulations.

•	 MEMS-based integrated RF subsystems that reduce the size and mass of space transceivers and transponders. Frequencies of interest 

include UHF and X- and Ka-band. Of particular interest is Ka-band from 25.5 to 27 GHz and 31.5 to 34 GHz.

•	 Novel approaches to mitigate RF component susceptibility to radiation and electromagnetic interference (EMI) effects.

•	 Innovative packaging techniques that can lead to small-size, lightweight compact SSPAs with integrated heat extraction for thermal 

stability and reliability.

For all above technologies, research should be conducted to demonstrate technical feasibility during Phase I and show a path towards 

Phase II hardware/software demonstration with delivery of a demonstration unit or software package for NASA testing at the completion 

of the Phase II contract. 

Phase I Deliverables—Feasibility study, including simulations and measurements, proving the proposed approach to develop a given 

product (Expected technology readiness level (TRL) 3 to 4). Verification matrix of measurements to be performed at the end of Phase II, 

along with specific quantitative pass-fail ranges for each quantity listed.

Phase II Deliverables—Working engineering model of proposed product, along with full report of development and measurements, 

including populated verification matrix from Phase I (TRL 5 to 6). Opportunities and plans should also be identified and summarized for 

potential commercialization.
—2—

New Horizons Pluto Flyby Mission.
—3—

Radiofrequency (

Communication Technolo

SBIR Phse I

2006 to 2014
—4—

Solid-State Power Amplifiers (SSPAs) using Reduced Cond

Angle techniques on Wide-Bandgap Devices for Ult

Efficienc

Hittite Microwave Corporation

2006 Phase I

O1.09-937

Identification and Significance of Innovation

•	 The power amplifier will provide tubelike power levels at efficiencies that are

at a tube level, but it will have greater

frequency bandwidth and a more graceful

degradation.

•	 Can operate with standard power

supplies; does not require the high-voltage

power supplies the traveling-wave-tube

amplifiers (TWTAs) require.

•	 Provides a very small, very lightweight

package.

Technical Objectives

•	 Phase II Objective: fabricate Phase I designs, load-pull redesign, and 

layout, and refabricate power amplifiers and hybrid modules

•	 Process amplifiers

•	 Measure load pull and optimize load

•	 Improve model to include harmonics

•	 Gallium nitride (GaN) design and fabrication

•	 Characterize designs

•	 Build package and test

•	 Build second array and test

•	 Summarize data and report

NASA Applications and Non-NASA Applications

•	 Ground-based terminal transmitters

•	 Deep space probes transmitters

•	 Rover transmitters

•	 WLNA transmitters

 8 GHz, 20 Watt, 55% efficient power amplifier.
—5—

Integrated monolithic microwave integrated circuit (M

for Phase-Locked Oscillators and Frequency Synt

Hittite Microwave Corporation

2006 Phase I

O1.09-9380

Identification and Significance of Innovation

Space vehicles for deep space exploration rely

on small, lightweight, low-power microwave

communication systems for command control

and data transfer. There has been only a limited

supply of MMICs for these functions. Hittite

recognized this and developed a product line

of frequency synthesis components. A single

generic synthesizer MMIC with no needed

external ICs that can interface to any VCO and

provide phase locking will minimize space

qualification cost, size, and direct current (DC)

power of current and future deep space probe

missions.

Technical Objectives

•	 The objective of the program is to design, fabricate, and demonstrate 

a fully integrated X-band MMIC that can be used to synthesize local 

oscillator (LO) signals required for existing and future deep space 

transponders

•	 The intent is to integrate this chip with any voltage-controlled oscillator 

(VCO) in the 100 MHz to 12 GHz frequency range

•	 The work plan is to use a very high fTSiGe MMIC process (>75 GHz) 

and operate the digital logic cells at very low current density while still 

maintaining excellent bandwidth and low noise performance

•	 The MMIC chips will be designed, fabricated, and evaluated prior to 

being integrated into PLLs for demonstration

NASA Applications and Non-NASA Applications

•	 LO synthesis for deep space transponders

•	 LO synthesis for microwave test equipment

•	 Military and space markets

Generic MMIC.
—6—

Reconfigurable Miniature Transponder for Multimode 

and X-band Space Communicat

Space Micro, Inc

2006 Phase I

O1.09-9523

Identification and Significance of Innovation

•	 FPMAs

•	 Reconfigure macro radiofrequency (RF)

functions

•	 Reconfigure as S- or X-band

•	 Reconfigure as receiver or transmitter

•	 Modular, reusable 0.1-8 GHz building

blocks

•	 Tunable microelectromechanical system

(MEMS) RF/IF filters

•	 SiGe BiCMOS process FPMA chip

development

Technical Objectives

•	 Demonstrate feasibility of reconfigurable Field Programmable 

Microwave Arrays (FPMAs)

•	 Demonstrate FPMA capabilities by circuit design and simulation

NASA Applications

•	 Lunar and Martian applications

•	 S and X-band transponders, Spacecraft Tracking and Data Network 

(STDN), and Tracking and Data Relay Satellite System (TDRSS)

•	 Reconfigurable deep space probe communication links

Non-NASA Applications

•	 SGLS and X-band transponders

•	 Tacsat, Space Situational Awareness Sats
—7—

Development of Epitaxial Gallium Nitride (GaN)

Radiofrequency (RF) Communica

Neocera, LLC

2007 Phase I

O1.09-8325

Identification and Significance of Innovation

•	 Proposed HPED technology combines

two pulsed energy technologies: plasmaenergy-controlled PLD to deposit highquality GaN films and in situ pulsed

energy annealing to decrease the

dislocation density (<106 cm–2). PLD’s

pulsed plasma can be controlled in a

wide energy range to accomplish the

best film quality, and Neocera-fabricated

high-quality epitaxial GaN films result

in strong photoluminescent emission at

room temperature. The combined in situ

pulsed energy annealing will reduce GaN

threading dislocation density, using the

energetic “pulsed” annealing in ultrashort

time.

Expected technology readiness level (TRL)

range at the end of contract

•	 3 to 4

Technical Objectives

•	 Development of plasma-energy-controlled Pulsed Laser Deposition 

(PLD) process to optimize the GaN film structures and properties

•	 Development of pulsed energy annealing processes using pulsed 

electron and pulsed laser beams to reduce the dislocation density in 

GaN layer

•	 Development of Hybrid Pulsed Energy Deposition (HPED) process to 

combine above two pulsed energy technologies

•	 Evaluation of current leads

•	 AlN film deposition on c-Al2O3 via HPED process

•	 GaN film deposition on AlN-buffered c-Al2O3via HPED process

•	 Patterning of HPED process for low dislocation density GaN

•	 Delivery of test results to NASA

NASA Applications

•	 High dislocation density limiting the current GaN technology from space 

RF communication applications can be resolved by proposed in situ 

pulsed energy annealing processes on high-quality epitaxial GaN films 

that Neocera succeeded with plasma-energy-controlled Pulsed Laser 

Deposition process, resulting in strong photoluminescent emission 

properties even at room temperature

Non-NASA Applications

•	 The successful Phase I will create a new market for hybrid pulsed 

energy deposition process systems to fabricate high-quality thin films 

with significantly reduced structural imperfections. The improved

GaN films via the proposed process will expedite the current GaN 

industrial markets including high-power electronic components and 

optoelectronic devices
—8—

Integrated Production of Ultra-Low Defect Gallium Ni

(GaN) Films and Devices for High-Power 

SVT Associates 

2007 Phase I

O1.09-9383

Identification and Significance of Innovation

•	 GaN epitaxial films with threading

dislocation <107 per cm2 will be prepared

using a novel defect filter technology

for fabrication of high-speed and highpower amplifiers. This vacuum-process

integrated dislocation reduction method is

developed for efficient, fast, and low-cost

production of ultra-low defect materials.

•	 The method is based on controlled

formation of nanoripples by a low-energy

ion beam to filter the dislocations.

•	 It does not require out-of-vacuum

processing steps such as photolithography,

etching, or insertion of foreign materials.

•	 This method is applicable to other IIInitride films, including technologically

important InGaN and AlGa

Expected technology readiness level (TRL)

range at the end of contract

•	 4 to 5

Technical Objectives

•	 Optimized dislocation filtering layer

•	 Ion-assisted molecular beam epitaxy (MBE) growth of GaN high 

electron mobility transistor (HEMT) on low-defect templates (TD <107

per cm2 )

•	 GaN high-power amplifier device processing and characterizations

•	 Based on the Phase I objectives, three milestones will be complete in 

the timeframe listed below

– Prepare defect nanofilters and do characterizations and optimizations 

in first 3 months

– By month 3, optimized dislocation layer will be used to grow low TD 

nitride films (less than 1E6 cm2)

– Characterizations of TD and further reduce the TD; characterization of 

films and devices 

NASA Applications

•	 High-speed and high-power amplifiers; radiation-hard and ultra-lownoise amplifiers; HEMT devices for radar and range finding, collision 

avoidance, and digital transmission; ultraviolet (UV) photo detectors for 

free-space optical communications; astrophysics; and biological agent 

detection, flame detection, and missile launch monitoring 

Non-NASA Applications

•	 HEMT device for radiofrequency (RF) and microwave mobile wireless 

communications

•	 Blue lasers, high brightness visible light-emitting diodes (LEDs), UV 

detectors for chemical and biological agent spectroscopy and threat 

detection, ozone detection and environmental monitoring

GaN grown on sapphire substrates. (a) No dislocation filter. (b) With one dislocation filter.
—9—

Monolithic microwave integrated circuits (MMICs) for HighEfficiency Ka-BAnd Gallium Nitride (GaN)

Hittite Microwave Corporation 

2007 Phase I

O1.09-9627

Identification and Significance of Innovation

•	 GaN technology for millimeter-wave

(MMW) amplifiers enables design of

compact, high-efficiency transmitters for

Ka-band space communications providing

a significant improvement in the power

output capability of the transmitter, but

without a significant impact on the payload

size and the power consumption.

Expected technology readiness level (TRL)

range at the end of contract

•	 3

Technical Objectives

•	 Establish design baseline for GaN MMIC amplifiers for transmitters used 

in lunar and deep space explorations

•	 Evaluate and select optimum foundry process for GaN MMIC amplifiers

•	 Select amplifier topology, class of operation, and device gate periphery

•	 Design amplifiers and simulate

NASA Applications

•	 Efficient transmitters in spaceborne platforms for communications and 

surveillance radars

Non-NASA Applications

•	 Satellite communications for both spaceborne and ground-based 

terminals (Boeing Space Systems and Hughes Network Systems)

•	 Automotive radar

10 W, 20 GHz GaN Doherty amplifier.
—10—

Three-Dimensional (3D) Microfabricate

Reconfigurable Compo

Nuvotronics, LLC 

2008 Phase I

O1.07-844

Technical Objectives

•	 4-month Phase I effort

– Design, simulation, and fabrication of new beams support for 

PolyStrata tunable

– Design and simulation of Ka- and W-band tunable filter

– Design, simulation, and fabrication of new V-band 

microelectromechanical system (MEMS) socket for monolithic 

microwave integrated circuits (MMICs) integration

– Design, simulation of V-band digital phase shifter

•	 18-month Phase II effort

– Fabricate Ka- and W-band tunable filter

– Fabricate V-band digital phase shifter

– Reliability test on first-run components

– Second fabrication iteration to improve performances 

NASA Applications and Non-NASA Applications

•	 Communications and exploration satellites and missions

•	 Advanced military radars

•	 Cellular base stations

•	 Automotive anticollision radar

•	 Combining new wafer-level air-core 

micro-coax with integrated MEMS will 

create lowest insertion loss analog 

and digital 360 degree phase shifters 

and tunable filters with 10% tuning 

bandwidth capable of being designed to 

operate anywhere in the microwave and 

millimeter-wave spectrum (1 to >100 

GHz).

•	 Batch manufacturing and automated 

testing using this high-yield process 

(99.8%) leads to cost-effective products 

in both low and high volumes.

•	 Monolithic actuator development in 

this program is key to enabling this 

capability.
—11—

A 60 to 85% efficient X and K-Band 1-KiloWatt solid-state 

Amplifier (SSPA) using Gallium Nitride (GaN)

Group 4 Labs, LLC

2008 Phase I

O1.07-9782

Identification and Significance of Innovation

•	 We have created the first GaN-on-Diamond

Epi-wafers for high-efficiency/high-power

RF transistors.

•	 We have fabricated and measured a 200%

boost to a GaN transistor’s output power

density for a given junction temperature.

This is due to Diamond’s extreme thermal

conductivity—1200 W/m/K. SiC, Si 

400, 150 W/m/K, respectively. Early results:

PAE jumped 10 points to 62%. We expect

to reach 85% shortly.

Technical Objectives

•	 Goal—To demo the world’s most efficient (60 to 85%) solid-state X and 

Ka-band power amplifiers using GaN-on-Diamond

•	 Phase I Objective—Demo a 10-W, 60%+ power-added efficiency (PAE), 

GaN-on-Diamond power amplifier at X-band (8.4 GHz) and Ka-band

(36 GHz)

•	 Phase II Objective—Demo a 1-kW, 60 to 85%+ PAE, GaN-on-Diamond 

power amplifier at X-band (8.4 GHz) and Ka-band (26, 32, and 38 GHz

NASA Applications

•	 Long-range microwave communications from Mars

•	 SSPAs and monolithic microwave integrated circuits (MMICs) for 26 

GHz Ka-band lunar communications

•	 Replacing vacuum electronics amplifiers (e.g., traveling-wave-tub

amplifiers (TWTAs), and Klystrons)

Non-NASA Applications

•	 Radiofrequency (RF) power amps for 3G/EDGE/WiMax cellular base 

stations

•	 GaN-on-Diamond-based THz sources (for security, biosensors, etc.

•	 GaN-on-Diamond blue/white light-emitting diodes (LEDs)/laser
—12—

High-Power Wide-Bandgap Engineered millimeter-Wav

Monolithic microwave integrated circuit (MMIC) Tran

TLC Precision Wafer Technology, Inc

2009 Phase I

O1.07-8064

Identification and Significance of Innovation

•	 High-power tunable transceiver/radar

MMIC on engineered GaN wafers

Technical Objectives

•	 Demonstrate ultra-high-power, stable wide-band rad-hard MMW 

MMICs on lattice engineered epi gallium nitride (GaN)

•	 Fabricate and test frequency tunable high-performance singletransceiver MMIC on latticed engineered epi wafers (GaN)

•	 Demonstrate innovative high-performance interim transceiver modules 

(Ka- and V-band)

•	 Convert designs and fab for NASA and key customer applications on 

GaN

•	 Develop advanced high-power/rad-hard InAlN/InGaN/GaN epi wafers

•	 Fabricate on GaN epi exiting device mask set

•	 Develop low-cost fabrication methods

•	 Begin adjusting exiting MMW MMIC design for GaN processing

NASA Applications and Non-NASA Applications

•	 MMW wireless links

•	 Automotive radar

•	 Radar chip

•	 Satellite T/R chip

•	 Military
—13—

NanoParticle Scandate Cathode for Space Communica

ebeam, inc

2009 Phase I

O1.07-9345

Identification and Significance of Innovation

•	 A scandate modified impregnated

cathode based on the view that a thin

layer of nanoparticle scandia, elevated in

temperature and impregnated with barium,

forms a conductor. Moreover, barium on

scandia at the vacuum interface is a very

low work function surface. Consequently,

a top layer of scandia nanoparticles on top

of a tungsten impregnated cathode should

provide superior emission without the

drawbacks of previous cathodes.

•	 Significance—The innovation provides

substantial improvements in cathode life

and emission current density. Cathodes are

now limiting power, bandwidth, frequency,

and life current density. Cathodes are now

limiting power, bandwidth, frequency, and

life in microwave linear beam amplifiers.

These, in turn, limit data rates of space

communications to much less than current

data generation capabilities.

Expected technology readiness level (TRL)

range at the end of contract

•	 3 to 6

Technical Objectives

•	 Auger analysis of existing scandate cathode to determine surface 

segregation of scandia

•	 Refine understanding of electrochemistry of scandate cathode and 

determine cathode composition

•	 Fabricate nanocrystals of scandium oxide

•	 Synthesize and test top layer scandate cathode

•	 SEM test of existing scandate cathode; in situ multilevel auger scan of 

top surface of existing scandate cathode

•	 Study methods of nanoparticle formation; precipitate scandia from 

solution; repeat using sol-gel; spray pyrolysis on smooth substrate; and 

analysis of coating

•	 Fabricate tungsten matrix cathodes; spray pyrolysis of nanoscandia on 

tungsten

•	 Seal, pump, and test

•	 Evaluate data and propose improvements

NASA Applications

•	 For high-data-rate transmissions from deep space, especially for highresolution video imaging at real-or near-real time rates, such as Mars 

exploration and fly-bys of planets

•	 Terahertz amplifiers for atmospheric investigations

Non-NASA Applications

•	 Terahertz sources and amplifiers for explosives detection

•	 Traveling-wave tubes for geostationary communications satellites
—14—

Gallium Nitride (GaN) Bulk Growth and Epitaxy from Ca-G

The IIIAN Company, LLC 

2009 Phase I

O1.07-9857

Identification and Significance of Innovation

•	 This SBIR proposal addresses the LPE

of GaN films using nitrogen-enriched

metal solutions. Growth of GaN from

solutions offers the possibility of

drastically reducing the density of line

defects. As these defects adversely affe

both breakdown voltages and electron

velocities, their reduction can significantly

increase the performance of high-power

Ka-band high electron mobility transistor

(HEMT) structures used for satellite

communications.

Expected technology readiness level (TRL)

range at the end of contract

•	 3

Technical Objectives

•	 Demonstration of liquid phase epitaxy (LPE), or seeded growth, of GaN 

from Ca-Ga-N solutions

•	 Evaluation of defect density in the LPE-grown GaN film

•	 Evaluation of the surface morphology of LPE-grown GaN

•	 Characterization of the thermodynamic and reaction/crystallization 

kinetics of Ca-Ga-N solutions

•	 Refinement of CALPHAD analysis of the Ca-Ga-N ternary phase diagram

•	 Evaluation of atomistic modeling of GaN crystallization in the Ca-Ga-N 

ternary system

NASA and Non-NASA Applications

•	 High-power, high-frequency transistors for X- and Ka-band 

telecommunications

•	 Sensors, particularly visible-blind, ultraviolet sensitive photodiodes

•	 Short wavelength emitters, light-emitting diodes (LEDs), and lasers

Graphic unavailable
—15—

DD-Amp for Deep Space Commu

MaXentric Technologies

2010 Phase I

O1.05-9045

Identification and Significance of Innovation

•	 Highly linear power-efficient power

amplifiers for NASA’s next generation de

space missions

•	 High-power-added efficiency >60%,

constant envelope waveforms

•	 Medium output power version 10 to 50 W

peak envelope power

•	 High-output power version, 150 W to 1 kW

peak envelope power

•	 X-band 8.4 GHz and Ka-band 26, 32, and

38 GHz

Technical Objectives

•	 Switch-mode amplifier device evaluation and modeling

•	 Explore the best configuration to mitigate the loss in switch-mode 

amplifier 

•	 Power amplifier module design consideration

•	 Conduct trade studies on combiner topologies

•	 Simulate chosen combiner topologies

•	 Compare combiner complexity versus power amplifier size

•	 Simulate and design combiners with power amplifier models 

NASA and Non-NASA Applications

•	 Portable long-range communications

•	 X- and Ka-band radar systems

•	 X- and Ka-band commercial systems

•	 Phoenix mission

•	 Two NASA Mars Exploration

•	 Mars Reconnaissance Orbiter

•	 Cassini

•	 Voyager status reports 
—16—

High-Efficiency, High-Power Ka-Band Elliptic

Traveling-Wave-Tube Amplifier (TWTA) for Long

Radiofrequency (RF) Telecommunica

Beam Power Technology, Inc.

2010 Phase I

O1.05-9226

Identification and Significance of Innovation

•	 Elliptic-beam helix TWT technology

•	 Higher efficiency—75%

•	 Higher power—500 W

•	 Higher power-to-mass ratio—180 W/kg

•	 Lower voltage—9.2 kV

•	 Reducing volume by 30%

Expected technology readiness level (TRL) at

the end of contract

•	 3

Technical Objectives

•	 Phase I—Determine the feasibility of high-efficiency, high-power, 

lightweight Ka-band elliptic-beam traveling-wave tube (TWT) via 

design and engineering

•	 Phase II—Demonstrate the device and measure the efficiency and 

power output

NASA Applications

•	 Long-range space RF telecommunication 

Non-NASA Applications

•	 Commercial satellite TWTAs

•	 Radar TWTAs

•	 Communication TWTAs

Elliptic-beam helix TWT.
—17—

SiZe, weight and power (SWaP) Optimized Space Tra

Nuvotronics, LLC

2010 Phase I

O1.05-9321

Identification and Significance of Innovation

•	 Miniaturization of satellite transceivers

•	 Substantial reduction of system size and

weight

•	 PolyStrata microfabrication process for

the fabrication of intricate microwave and

millimeter-wave devices. Devices have

been demonstrated with the following

characteristics:

– Insertion loss 5 to 10 times lower than

traditional planar circuits

– Isolation better than 60 dB for lines that

share separating walls

– Multiple levels of densely packed coaxial

circuits

– Low-parasitic attachment to active

devices and traditional circuit boards

•	 PolyStrata allows three-dimensional (3D)

routing of high density of transmission

lines

•	 Low-loss broadband PolyStrata recta-coax

creates high-performance transceiver

backplane in miniature package

•	 Copper backplane structure improves heat

transfer in space environment

•	 Batch microfabrication approach for low

cost

•	 Building blocks for future systems using

PolyStrata circuit backplanes

Expected technology readiness level (TRL)

range at the end of contract

•	 3 to 4

Technical Objectives

•	 Design Ka-band receiver architecture optimized for PolyStrata 

interconnections

•	 Design Ka-band transmit architecture optimized for PolyStrata 

interconnections

•	 Demonstrate modular functional blocks

•	 Develop initial system architecture for Ka-band receiver

•	 Develop initial system architecture for Ka-band transmitter

•	 Design Ka-band subassemblies for fabrication

•	 Mask layout of subassemblies

•	 Fabricate subassemblies in PolyStrata

•	 Assemble component ICs and passives into subassemblies

•	 Test and characterize the subassemblies

NASA Applications

•	 Space Communications and Navigation Integrated Network (SCaN) 

•	 NASA decadal survey missions

•	 Aerosol-Cloud-Ecosystems (ACE)

•	 Snow and Cold Land Processes (SCLP)

•	 Precipitation and All-Weather Temperature and Humidity (PATH) 

Non-NASA Applications

•	 Commercial satellite communications systems

•	 Unmanned aerial vehicle (UAV) communications

•	 Wireless and point-to-point

PolyStrata transceiver backplane.
—18—

X-Band Gallium Nitride (GaN) Power Amplifiers (PAs) for LongRange Space Radiofrequency (RF) Te

Nitronex Corporation

2011 Phase I

O1.05-930

Identification and Significance of Innovation

•	 The future deployment of sensors in space

will increase, resulting in a need for higher

data rate communications from space to

Earth at X-band. Increases to the overall

system gain of the communication link will

be required, which can be accomplished

by increasing the transmitted RF power.

However, the challenge is to maximize

power efficiency of the power amplifier

with higher RF output levels, e.g., 50-W at

X-band, while reducing the size, weight

and power (SWaP) size. The innovation

will be to produce a linear 50-W SSPA

MMIC with high direct current (DC)-to-RF

efficiency (>60%) and low SWAP using

GaN RF semiconductors at X-band (7

to 9 GHz). The significance of GaN is it

is a wide-bandgap RF semiconductor

with very high RF power density that is

robust to the high-radiation environment

of space. The 50-W GaN PA MMIC will

improve performance of NASA’s longrange space RF communication and is

estimated to be >50% smaller in size and

>20% lower in power.

Expected technology readiness level (TRL)

range at the end of contract

•	 3 to 5

Technical Objectives

•	 Develop 50-W GaN PA monolithic microwave integrated circuit (MMIC)

– X-band frequency: 8.0 to 9.0 G

– PA Output Power: >50 W continuous wave (CW) (linear)

– PA System Output IP3: >+55 dBm

– PA System Gain: >20 dB (includes RF power combining)

– Efficiency (Pout/Pin): >60%

– Input Operating Voltage: 28 Vdc

– Input Operating Current: <3 A 

– Size: <30 in3

– Weight: <2 lb

•	 Phase I detailed project plan with project Statement-of-Work (SOW) 

(interim report)

•	 Survey of X-band PA MMIC topologies; Trade and study of X-band GaN 

MMIC vs. GaN hybrid PA designs (interim report

•	 Develop and derive detailed specification for GaN 50-W solid-state power 

amplifier (SSPA) MMIC or hybrid (interim report)

•	 Define potential architectures for detailed GaN PA designs (interim report)

•	 Summary report on simulation and modeling of GaN X-band SSPA MMIC 

and/or hybrid (interim report)

•	 Identify project risks going into Phase II (e.g., radiation hardnes

•	 Generate and publish final report for Phase I

NASA Applications

•	 Long-range space RF communication systems

Non-NASA Applications

•	 Long-range space RF communication systems for customers such as 

Rockwell Collins, Harris Corporation, and ViaSat
—19—

High-power X- and Ka-band Gallium Nitride (GaN) Ampl

Exceptional Effici

Auriga Measurement Systems (Auriga Microwave)

2011 Phase I

O1.05-9434

Identification and Significance of Innovation

•	 Achieving very high-power amplification

with maximum efficiency at X- and Kaband is challenging using solid-state

technology. Gallium arsenide (GaAs) has

been the material of choice for high-power

microwave systems at these frequencies

for decades. Until only recently, GaAs

was unchallenged at Ka-band for solidstate amplification. Unfortunately, the low

power density of GaAs requires extensive

combining networks contributing to large

amplifier size and low efficiency; neither

is acceptable in next-generation highperformance systems.

•	 This program intends to push the limits of

current technology to achieve extremely

high power levels while obtaining

efficiency performance typical of much

lower frequency amplifiers. Doing so will

require the use of modern materials and

sophisticated passive networks to achieve

this performance. Auriga’s experience

with device physics, transistor modeling,

and high-power design make us uniquely

qualified to overcome the challenges in

this program.

Expected technology readiness level (TRL)

range at the end of contract

•	 2 to 4

Technical Objectives

•	 Auriga will use GaN high electron mobility transistors (HEMTs) to meet 

the frequency band and power level required. GaN HEMTs are highvoltage and high-power density devices, resulting in smaller, more

efficient power amplifiers (PAs). Competing GaAs pHEMT technology

is more mature and readily available, but cannot compete with GaN’s 

electrical and thermal performance. As GaN transitions from leadingedge to industry standard, its usage is expanding and the cost of entry

is diminishing

•	 Two PAs will be made during this program to operate at X- and Kaband. The X-band PA will provide 50 W output power with 50 to 60%

efficiency. The Ka-band PA will provide 15 W output power at 30 to

50% efficiency. The final deliverable will be a packaged modul

•	 The proposed work plan includes the following five tasks: device 

characterization, device model development, PA combining scheme 

investigation, X- and Ka-band PA design, and preliminary monolithic 

microwave integrated circuit (MMIC) layout. All work will be performed

at the Auriga Microwave facility in Massachusetts

NASA Applications

•	 Satellite communication uplink, radar, spaceborne platforms 

(i.e., spacecraft telecommunication, data link for planetary exploration

etc.

Non-NASA Applications

•	 Radar, weather monitoring, air traffic control, maritime vessel traffic 

control, and vehicle speed detection for law enforcement
—20—

Klystron Amplifier Utilizing Scandate Cathod

Electrostatic Focu

ebeam, inc

2012 Phase I

O1.02-961

Identification and Significance of Innovation

•	 Scandate cathodes are proposed as a

way to boost performance and life in

linear beam amplifiers such as klystrons

and traveling-wave tubes (TWTs) for

space communications. Our company

has recently demonstrated breakthrough

performance on these cathodes. We

have demonstrated 100 Amps/cm2 at

1050° Cb and 5 Amps/cm2 at 850° Cb.

This is 200° Cb below conventional

cathodes. At 850° Cb, the cathode wi

live at least 100,000 hours. This mak

it a candidate for deep space missions.

Because of low beam convergence,

the cathode also permits electrostatic

focusing of amplifiers, which will reduce

size and mass in spaceborne systems. In

Phase I we construct and test cathodes

in a realistic environment consisting of

a Pierce gun, an electrostatic focusing

stack, and two depressed collectors.

Expected technology readiness level (TRL)

range at the end of contract

•	 2 to 4

Technical Objectives

•	 Diode tests—Cathode pellets will be made with scandia-doped tungsten 

powder. Cathode assemblies and diode test vehicles will be constructed

Diode testers will be tested and life tested

•	 Pierce gun tests—Computer modeling will be done, parts acquired, and 

devices assembled. Devices will be pumped and tested at low voltage and

high voltage and then life tested

•	 Design beam tester—Pierce gun design will be adjusted, focusing stack 

will be designed. Pierce gun and focus stack designs will be integrate

Beam parameter range and collectors will be modeled

•	 Construct beam tester—Parts will be acquired and beam tester will be 

constructed, pumped, baked, and sealed

•	 Electron beam test and focus characterization—Beam tester will be 

activated and tested. Focusing will be tested and optimized. Data will b

analyzed and conclusions reached.

NASA Applications

•	 Vacuum linear beam amplifiers and sources, allowing high data rates, 

higher frequencies, and more power

•	 Ion thrusters for discharge and neutralization, both for near-Earth and longrange space flights

•	 Their small size and high loading make them essential in terahertz 

amplifiers used for upper atmosphere studies, as well as communications

Non-NASA Applications

•	 Geocentric communications satellites—Scandate cathodes will raise 

the frequency and power of traveling-wave tubes (TWTs). Longer life will

reduce maintenance costs on these systems

•	 Earth-based communications networks

•	 Micro-focus x-ray tubes and in ultraviolet (UV) electron-beam-pumped 

lasers
—21—

Self-Biased Radiation-Hardened Ka-Band Circulators for 

Weight, and Power-Restricted Long-Range Space Ap

Metamagnetics, Inc

2012 Phase I

O1.02-969

Identification and Significance of Innovation

•	 Ferrite control components including

circulators and isolators are fundamental

building blocks of TRM utilized in highdata-rate active space transceivers and

transponders for both long-range (LR) and

low-Earth orbit (LEO) systems. As such,

performance specifications of these ferrite

control components, such as bandwidth,

insertion loss, isolation, power handling,

temperature stability, radiation hardness,

and linearity impose strict limitations on

the overall system performance. Over

the course of the proposed Phase 1

SBIR program self-biased ferrite control

components based on Metamagnetics’

proprietary highly textured hexagonal

ferrite compacts, which have the potential

to eliminate biasing magnets and

significantly reduce the size, cost, and

weight of the TRM while concurrently

increasing power handling capability,

and improving temperature stability and

radiation hardness will be investigated

at Ka-band (>27 GHz—31.5 to 34 GHz

targeted).

Expected technology readiness level (TRL)

range at the end of contract

•	 2 to 3

Technical Objectives

•	 Development of self-biased, low-loss circulators at frequencies above 

27 GHz. Self-biased circulators hold great promise for reduced size,

weight, cost, increased temperature stability, and power consumption 

necessary for the development of next generation transmit/receive 

modules (TRM) and long-range space communication systems. This

research builds upon a knowledge base in self-biased circulator 

and substituted hexagonal ferrite development spanning more than 

30 years. Key challenges in this research include realization of selfbiased materials with sufficiently low loss and zero field ferromagnetic

resonance frequency

•	 Materials fabrication—Refinement of composition, microstructure, and 

properties

•	 Device simulation—Iterative design specification, evaluation, and 

refinement

•	 Device prototyping—Fabrication and testing of simulated designs

NASA Applications

•	 DESDynI (Deformation, Ecosystem Structure and Dynamics of Ice)

•	 SWOT (Surface Water and Ocean Topography)

•	 HyspIRI (Hyperspectral Infrared Imager)

Non-NASA Applications

•	 Ground-based TRMs utilized in active electronically steered arrays 

(AESAs)
—22—

Millimeter-Wave (MMW) InterSatellite Tra

MaXentric Technologies, LLC 

2014 Phase I

O1.03-871

Identification and Significance of Innovation

•	 Future spacecraft require higher data

rates with improved size, weight and

power (SWaP) and performance. The la

of interference-free spectrum complicates

the introduction of these services. Whi

the incremental advances in equipment

performance requested in X- and Kabands may meet these future need

previous Defense Advanced Research

Projects Agency (DARPA) investments in

the F6, Mobile Hotspot, and Microsca

Power Conversion programs can be used

as a basis to develop equipment operating

in the underutilized intersatellite band 59

to 71 GHz, with almost 12 GHz of spectrum

available. The rapid commercialization

of the E- and V-bands for terrestrial

use has driven down the costs and

increased the variety of RF components.

As a Phase 1 and 2 participant in these

DARPA programs, MaXentric is in a

unique position to design, develop, and

demonstrate a small, low-SWaP, highdata-rate, power-efficient, 59-to 71

transceiver that could be incorporated

into NASA’s SCaN Integrated Network

Architecture in the future.

Expected technology readiness level (TRL)

range at the end of contract

•	 3 to 4

Technical Objectives

•	 Spectrum coexistence study—Study will be made to identify what, if 

any, restrictions might be applicable for operation at these frequencies

•	 Develop 59- to 71-GHz transceiver link budgets—MaXentric will 

create a link budget model to quantify the range and tradespace of 

transmit powers and receiver parameters available at 59 to 71 GHz 

and map them to distances and appropriate use cases within Space 

Communications and Navigation (SCaN)

•	 Environmental study—Analysis will be made of the suitability of the 

available component ecosystem for 59 to 70 GHz for use in the SCaN 

space environment

•	 Detail design (electrical)—Detailed circuit design will be made of 

a transceiver subsystem capable of operation in the 59 to 71 GHz 

band. Important findings from the F6, MHS, and MPC programs will be

included in the design

•	 Detail design (mechanical)—Detailed mechanical design will be made 

of a transceiver subsystem capable of operation in the 59 to 71 GHz 

band

•	 Demonstration of high-data-rate link—Laboratory-based 

demonstration will be performed using prototype hardware from the F6 

and MHS programs

NASA Applications

•	 SCaN network

•	 Future Tracking and Data Relay Satellite (TDRS) platform

Non-NASA Applications

•	 Small commercial satellites, unmanned aerial vehicle (UAVs), or in 

a different mechanical format for cellular back haul and microwave 

point-to-point links
—23—

Radiation Hard Multichannel Aluminum Nitride (AlN)/

Nitride (GaN) High Electron Mobility Transistor (HEMT) for HighEfficiency X- and Ka-B

Agnitron Technology 

2014 Phase I

O1.03-911

Identification and Significance of Innovation

•	 This project is directed to the development

of low-loss, high-power-density AlN/GaN

heterostructure based transistors for

enabling high-efficiency solid-state power

amplifiers (SSPAs) needed for advancing

capabilities of future robotic and human

exploration spacecraft. The AlN/GaN

heterostructure is a particularly attractive

system for switch-mode applications due

to the extremely high charge density, high

electron mobility, high intrinsic breakdown

field, and physical thinness achievable and

has seen widespread investigation toward

solid-state amplifiers in recent years. A

new patent-pending multichannel AlN/

GaN field-screening (FS) HEMT design

is described. Preliminary experimental

results are presented validating design

principles that will eliminate current

collapse phenomenon at X- and Ka-band

frequencies that has plagued traditional

HEMT designs and will ultimately deliver a

low-loss switch-mode device.

Expected technology readiness level (TRL)

range at the end of contract

•	 3 to 5

Technical Objectives

•	 Epitaxial growth of high-quality AlN/GaN heterostructures by 

metalorganic chemical vapour deposition (MOCVD)

•	 Dual-channel AlN/GaN HEMT device process development and 

optimization

•	 HEMT device characterization

– Device structure design and optimization by heterostructure modeling

– MOCVD growth of dual-channel AlN/GaN HEMT structures

– HEMT process development and optimization

› Ohmic contact resistance minimization

› Built-in T-gate recess process optimization

– HEMT device characterization

› DC characterization

› Pulsed response and small signal characterization

NASA Applications

•	 Active phased-array antennas

•	 Communications systems for robotic and human exploration spacecraft

•	 Satellite communications

Non-NASA Applications

•	 Civilian aerospace radar

•	 Communication applications
—24—

High-Efficiency, Ka-Band Solid-State Power Amplifier (

Utilizing Gallium Nitride (GaN) Tech

QuinStar Technology, Inc

2014 Phase I

O1.03-9656

Identification and Significance of Innovation

•	 Future NASA robotic and manned space

exploration missions require highefficiency (60%) SSPAs, operating at

Ka-band, for high-data-rate, long-ran

space communications

•	 Employing state-of-the-art GaN MMIC

technology to fabricate a high-efficiency

SSPA operating at Ka-band frequenci

(31.5 to 34 GHz)

•	 GaN devices are operating in a Class F

switching mode for highest efficiencies;

simulations with commercial foundry

models show that it is possible to realize

power-added efficiency (PAE) levels above

60%

•	 Employing a high-efficiency (95%) fourway planar combiner to achieve 20 W

output power

Expected technology readiness level (TRL)

range at the end of contract

•	 1 to 3

Technical Objectives

•	 Develop a GaN-based, high-efficiency SSPA operating at Ka-band 

frequencies (31.5 to 34 GHz) for high-data-rate, long-range space

communications

•	 Reach 20 W output power and 60% power-added efficiency

•	 Conduct a SSPA architecture study to examine the tradeoffs between 

power and efficiency

•	 Evaluate and select a GaN foundry partner for Phase II

•	 Perform switching-mode simulations of the high-efficiency GaN 

monolithic microwave integrated circuit (MMIC) amplifier

•	 Design, simulate, and lay out the GaN MMIC

•	 Design and simulate the four-way, high-efficiency combiner network

•	 Submit Phase I final report

NASA Applications

•	 Robotic and manned space exploration missions requiring highefficiency SSPAs, operating at Ka-band, for high-data-rate, long-range 

space communications

•	 Ka-band radar sensors for a wide variety of Earth science applications

Non-NASA Applications

•	 Department of Defense (DoD) applications include SATCOM for the Army 

in the 29.5 to 31 GHz band and military radar applications unmanned

aerial vehicles (UAVs) and airborne in the 33 to 38 GHz band

•	 SATCOM terminals

•	 Airborne terminals for commercial airlines

•	 Weather and environmental monitoring radars

•	 Aircraft landing systems
—25—

Radiofrequency (R

Communication Technolo

SBIR Phse I

2006 to 2014

Traveling-wave-tube amplifier (TWTA)

for Lunar Reconnaissance Orbiter.
—26—

Integrated Production of Ultra-Low Defect Gallium Ni

(GaN) Films and Devices for High-Power 

SVT Associates 

2007 Phase II

O1.09-938

Identification and Significance of Innovation

•	 GaN epitaxial films with threading

dislocation less than 1E6 per cm2 will

be prepared using a novel defect filter

technology for high-speed and highpower amplifiers. This vacuum-process

integrated dislocation reduction method

is developed with high efficiency of defect

reduction rate in terms of film thickness,

process steps, and cost. This method

takes advantage of defect nanofilter

induced by off-normal ion beam to bend/

terminate the dislocations, which did not

require out-of-vacuum processing steps,

foreign material insertion, nor lithograph

etching. This method is applicable to other

III-nitride films, including high InGaN and

AlGaN.

Expected technology readiness level (TRL)

range at the end of contract

•	 4 to 5

Technical Objectives

•	 Optimized dislocation filtering layer

•	 Ion-assisted molecular beam epitaxy (MBE) growth of GaN high 

electron mobility transistor (HEMT) on low defect templates (TD less 

than 1E6 per cm2)

•	 GaN high-power amplifier device processing and characterizations 

•	 Based on the Phase I objectives, three milestones will be complete in 

the timeframe listed below

– Prepare defect nanofilters and do characterizations and optimizations 

in first 3 months

– By month 3, optimized dislocation layer will be used to grow low TD 

nitride films (less than 1E6 cm2)

– Characterizations of TD and further reduce the TD; characterization of 

films and devices 

NASA Applications

•	 High-speed and high-power amplifiers

•	 Radiation-hard and ultra-low noise amplifiers

•	 HEMT devices for radar and range finding, collision avoidance, and 

digital transmission

•	 Ultraviolet (UV) photo detectors for free-space optical communications, 

astrophysics, and biological agent detection, flame detection, and 

missile launch monitoring 

Non-NASA Applications

•	 HEMT device for radiofrequency (RF) and microwave mobile wireless 

communications

•	 Blue lasers, high brightness visible light-emitting diodes (LEDs), UV 

detectors for chemical and biological agent spectroscopy and threat 

detection, ozone detection, and environmental monitoring

GaN films grown with two filter layers. Large area scans show the 

dislocation density is about 5.0×106 cm–2 measured by counting etch pits. 

Characteristic DC (solid lines) and Pulsed (dotted lines) I-V curves of an 

AlN/GaN MOS-HEMT.
—27—

Three-dimensional (3D) Microfabricated

Reconfigurable Compo

Nuvotronics, LLC

2008 Phase II

O1.07-844

Identification and Significance of Innovation

•	 Novel high-performance miniatu

tunable filters for transponders

•	 Microfabrication approach for

manufacturability

•	 Substantial reduction of system size and

weight

•	 Reduction of required filters and system

complexity

•	 Building blocks for future systems using

Polystrata circuit backplanes

Expected technology readiness level (TRL)

range at the end of contract

•	 4 to 5

Technical Objectives

•	 Deliver high-performance, low-weight, and compact filters, which could 

be integrated into the DSN (Deep Space Network) uplink transponder 

for the X-and K-band uplink receiver frontend

•	 Design and fabricate tunable filters at X- and Ka-band; extremely 

narrow band filters in the range of 0.3 to 0.7% bandwidth will enabl

new uplink channels in the X- and Ka-band

•	 Package and measure the Ka-band filters fabricated during Phase I; 

radiofrequency (RF) performance and reliability results will drive the 

design geometry of the first build

•	 Tune the two Ka-band filters designed in Phase I

•	 PolyStrata filters and microelectromechanical system (MEMS) 

components will be integrated to realize X- and Ka-band tunable 

circuits

•	 As a platform technology, the elements that are developed in this 

program can be integrated as building blocks into future programs and 

system architectures

NASA Applications

•	 Satellite communications systems

•	 Wide-band military handsets

•	 Airborne and space communication

Non-NASA Applications

•	 Commercial satellite communications systems (phones, TV, and apps)

•	 Airborne and mobile communications

•	 Wireless and point-to-point
—28—

NanoParticle Scandate Cathode for Space Communica

Phase 

ebeam, Inc

2009 Phase II

O1.07-934

Identification and Significance of Innovation

•	 An impregnated cathode with top layer of

scandium oxide 50-nanometer particles

on porous tungsten substrate with barium

impregnation. This innovation depends

on a process to produce unagglomerated

scandium nanoparticles that was

developed in Phase I. Scandate cathodes

have demonstrated emission levels 10X

current art, but performance has been

unreliable and nonrepeatable, with no

self-consistent theory for their operation.

All workers agree that scandium must

reach the surface to provide its beneficial

effect. Our approach deposits scandium

oxide at the surface in the beginning

rather than depend on obscure processes

to transport it from the bulk. We offer a

theory that explains known properties

and provides a path to optimization.

Wireless communications are limited by

power, frequency, and bandwidth of linear

amplifiers. These in turn are limited by

cathode performance, size, and life.

Expected technology readiness level (TRL) at

the end of contract

•	 7

Technical Objectives

•	 Process for generating isolated nonclumped 50-nanometer particles of 

scandium oxide by spray pyrolysis

•	 A top layer of scandium oxide nanoparticles on tungsten impregnated 

cathode by spray pyrolysis

•	 A top layer cathode by laser ablation

•	 Emission tested, working top-layer cathodes

•	 Deliverable sealed test devices containing top-layer cathodes with 

emission data and life test

•	 Miniature top-layer cathode

•	 Improved quantitative model capable of calculating optimal cathode 

properties

NASA Applications

•	 High-speed wireless transmission of video images from space probes

•	 Terahertz amplifiers for atmospheric investigations

Non-NASA Applications

•	 Terahertz sources and amplifiers

•	 Traveling-wave tubes (TWTs) for geosynchronous communications 

satellites

•	 High-speed x-ray imaging, e.g., computerized tomography (CT) scan

of moving organs

•	 Backlights and projectors using e beam-stimulated laser screens
—29—

Gallium Nitride (GaN) Bulk Growth and Epitaxy from Ca-G

The IIIAN Company, LLC

2009 Phase II

O1.07-985

Identification and Significance of Innovation

•	 This Phase II proposal addresses

the development of processing and

epi-technologies for delivery of highpower and high-reliability AlGaN/GaN

Ka-band field effect transistors (FETs)

for applications in long-range space

communications.

Expected technology readiness level (TRL) at

the end of contract

•	 3

Technical Objectives

•	 Ka-band transistor—broad performance targets

– Gate length: <100 nm

– Maximum drain voltage: 48 V

– Gain at 38 GHz: 8 dB, minimum

– Power density at 38 GHz: 5 W/nm

– Power-added efficiency (PAE): 60%

– Ft: 98 GHz

– Maximum power (discrete transistor): 10 W

NASA and Non-NASA Applications

•	 Solid-state power amplifiers for Ka-band communications

•	 Robust, low-noise receivers

•	 Ultra-high-frequency (500-GHz) transistors

•	 Liquid Phase Epitaxy (LPE) of GaN has potential to drastically reduce 

line dislocation densities—relevant to blue and ultraviolet (UV) diode 

lasers
—30—

X-Band Gallium Nitride (GaN) Power Amplifiers for Lo

Space Radiofrequency (RF) Telecommunic

Nitronex Corporation 

2011 Phase II

O1.05-9304

Identification and Significance of Innovation

•	 The innovation will be to develop a SSPA

that produces 50 W of linear RF at X-ba

(8.4 GHz) with high direct current (DC)-

to-RF efficiency (>60%) and low mass.

The significance will be the utilization

of wide-bandgap RF semiconductors to

efficiently create high RF power that is

robust to the high radiation environments

of space. A wide-bandgap compound

semiconductor material such as GaN will

provide this required innovation. GaNbased field effect transistors (FETs) have

the potential to operate at power densities

of up to 10 times that of conventional RF

semiconductor technologies, which will

enable compact PAs with higher RF output

power to be implemented. The proposed

GaN PA design is estimated to be >50%

smaller in both size and weight compared

to other solid-state solutions and almost

20% lower in power consumption for

typical designs used in long-range space

RF telecommunications.

Expected technology readiness level (TRL) at

the end of contract

•	 7

Technical Objectives

•	 The proposed technical objective will be a core GaN-based 100-W 

power amplifier (PA) monolithic microwave integrated circuit (MMIC) or 

hybrid building blocks with greater than 50% power added efficiency 

(PAE) while operating off power supply less than or equal to 48 V

•	 The results from this study will translate into innovative PA 

specifications and requirements for long-range space RF 

communications applications

•	 The notional system technical objectives for Phase I of this project 

– Device optimization and test cell design, fabricate, and test

– Modeling of optimized unit cell—Status Report 1 detailing model 

validity

– Amplifier component design, fabrication, and test—Status Report 2 

detailing amplifier component performance

– Design, assembly, and test of 100-W, X-band amplifier—Final Report 

showing results of 100-W amplifier assembly

•	 Phase II Technical Objectives

– X-band frequency: 8.4 to 8.5 G

– PA output power: Linear 50 W continuous wave (CW) and 100 W 

saturated

– PAE: >50%

– Input operating voltage: 48 V DC

NASA Applications

The primary NASA application is to replace sub 100- to 200-W travelingwave-tube amplifiers (TWTAs) with a GaN-based solid-state power 

amplifier (SSPA) that is much more power efficient. While this SBIR is

focused on 8.4 to 8.5 GHz, the technology development should be able t

be extended to frequenciesas high as 12 GHz

Non-NASA Applications

Alternative applications include broadband satellite communications 

(SATCOM), radar, and electronic warfare (EW) that span both C- and 

X-band frequency ranges. Nitronex has demonstrated parts operating

under high voltage andachieving high robustness (15:1 voltage standing 

wave ratio (VSWR) that can be applied to higher frequencysystems

Backlights and projectors using e beam-stimulated laser screens
—31—

Self-Biased Radiation-Hardened Ka-Band Circulators for 

Weight, and Power-Restricted Long-Range Space Ap

Metamagnetics, Inc

2012 Phase II

O1.02-9699

Identification and Significance of Innovation

•	 In order to realize increased data

rates, higher resolutions, and other

desired long-range communication

metrics in current and next-generation

phased-array systems, the trend has

been towards higher frequencies of

operation. Unfortunately, this requires

redesigning and/or retrofitting the

thousands of expensive T/R modules

used in the phased-array architectures.

A disproportionately large percentage

(~30%) of surface area within these

modules is devoted to biased ferrite

circulators. At high frequencies these

devices necessitate large biasing

magnets, which introduce severe size,

weight, and cost concerns. As a solution

Metamagnetics has developed an

innovative circulator technology capable

of operating with no biasing magnets.

The enabling technology developed and

demonstrated over the course of the

Phase 1 SBIR effort is low microwave and

dielectric loss hexaferrite materials that

lower device complexity, increase supply

chain security, decrease manufacturing

time, and lower costs.

Expected technology readiness level (TRL)

range at the end of contract

•	 5 to 6

Technical Objectives

•	 Materials fabrication efforts included refinement of hexaferrite 

composition, microstructure, and magnetodielectric properties towards 

reducing the material’s inherent losses. In particular the substrate

material’s dielectric loss tangent and magnetic line width were targeted 

as these values were shown through simulation as the largest overall 

contributors to loss in fabricated devices

•	 Device simulations were performed utilizing both in-house and 

commercial FEM solvers and included iterative design specification, 

evaluation, and refinement based on interactions with Jet Propulsion 

Laboratory (JPL) TMs and prime industrial partners. Over the course of

the Phase 1 effort, four separate device designs were designed with 

varying frequencies by Metamagnetics to show the horizontal scope of 

the technology

•	 Device prototyping included fabrication and complex testing of 

simulated designs. In the fabrication of these devices Metamagnetics

relied on standard existing low-cost photolithography techniques, 

which served to limit programmatic risk and device cost. All fabricated

devices were thoroughly characterized utilizing in-house equipment 

with respect to electrical performance, phase linearity, and response to 

high and low temperatures

NASA Applications

•	 TDRS (Technical Data Relay Satellite System), ACE (Aerosol, Cloud and 

Ecosystems Radar), SWOT (Surface Water and Ocean Topography), 

DESDynI (Deformation, Ecosystem Structure and Dynamics of Ice), and 

DSC (Ka-band Deep Space Communication)

Non-NASA Applications

•	 Commercial and defense communication systems

•	 Next-generation transmitter/receiver (T/R) modules
—32—
—33—

Agnitron Technology, Eden Prairie, MN . 

Auriga Measurement Systems, Lowell, MA . 

Beam Power Technology, Inc., Boston, MA . 

ebeam, Inc., Beaverton, OR .  .  .  .

Group 4 Labs, LLC, Menlo Park, CA . 

Hittite Microwave Corporation, Chelmsford, MA .  .  .

MaXentric Technologies, San Diego, CA .  .  

Metamagnetics, Inc., Canton, MA .  .  

Neocera, LLC, Beltsville, MD .

Nitronex Corporation, Durham, NC .  .  

Nuvotronics, LLC, Radford, VA .  .  .  .

QuinStar Technology, Inc., Torrance, CA . 

Space Micro, Inc., San Diego, CA  .

SVT Associates, Eden Prairie, MN .  . 

The IIIAN Company, LLC, Minneapolis, MN .  .  

TLC Precision Wafer Technology, Inc., Minneapolis, MN . 

Company Na
James D. Stegema

Technology Manager

Space Communications and Navigation Program

NASA Glenn Research Center

M/S 142–2

Cleveland, Ohio 44135

Telephone: 216–433–3389

E-mail: James.D.Stegeman@nasa.

Afroz J. Zama

NASA Glenn Research Center

M/S 54–1

Cleveland, Ohio 44135

Telephone: 216–433–3415

E-mail: Afroz.J.Zaman@nasa.g

SB

Points of Con

—34—

PS–01415–0914
Cover photo: Deep Space Radiofrequency (RF) 

Communication Scenario.