# Patent

## Title
Metrology method and apparatus, lithographic system, device manufacturing method and substrate

## Abstract

A lithographic process is used to form a plurality of target structures (92, 94) distributed at a plurality of locations across a substrate and having overlaid periodic structures with a number of different overlay bias values distributed across the target structures. At least some of the target structures comprise a number of overlaid periodic structures (e.g., gratings) that is fewer than said number of different overlay bias values. Asymmetry measurements are obtained for the target structures. The detected asymmetries are used to determine parameters of a lithographic process. Overlay model parameters including translation, magnification and rotation, can be calculated while correcting the effect of bottom grating asymmetry, and using a multi-parameter model of overlay error across the substrate.

## Background
CROSS-REFERENCE TO RELATED APPLICATIONS
This application claims the benefit of U.S. provisional application 61/668,277, which was filed on Jul. 5, 2012, and which is incorporated herein in its entirety by reference.


BACKGROUND
Field of the Invention
The present invention relates to methods and apparatus for metrology usable, for example, in the manufacture of devices by lithographic techniques and to methods of manufacturing devices using lithographic techniques.
Background Art
A lithographic apparatus is a machine that applies a desired pattern onto a substrate, usually onto a target portion of the substrate. A lithographic apparatus can be used, for example, in the manufacture of integrated circuits (ICs). In that instance, a patterning device, which is alternatively referred to as a mask or a reticle, may be used to generate a circuit pattern to be formed on an individual layer of the IC. This pattern can be transferred onto a target portion (e.g., including part of, one, or several dies) on a substrate (e.g., a silicon wafer). Transfer of the pattern is typically via imaging onto a layer of radiation-sensitive material (resist) provided on the substrate. In general, a single substrate will contain a network of adjacent target portions that are successively patterned. Known lithographic apparatus include so-called steppers, in which each target portion is irradiated by exposing an entire pattern onto the target portion at one time, and so-called scanners, in which each target portion is irradiated by scanning the pattern through a radiation beam in a given direction (the “scanning”-direction) while synchronously scanning the substrate parallel or anti parallel to this direction. It is also possible to transfer the pattern from the patterning device to the substrate by imprinting the pattern onto the substrate.
In lithographic processes, it is desirable frequently to make measurements of the structures created, e.g., for process control and verification. Various tools for making such measurements are known, including scanning electron microscopes, which are often used to measure critical dimension (CD), and specialized tools to measure overlay, the accuracy of alignment of two layers in a device. Recently, various forms of scatterometers have been developed for use in the lithographic field. These devices direct a beam of radiation onto a target and measure one or more properties of the scattered radiation—e.g., intensity at a single angle of reflection as a function of wavelength; intensity at one or more wavelengths as a function of reflected angle; or polarization as a function of reflected angle—to obtain a “spectrum” from which a property of interest of the target can be determined. Determination of the property of interest may be performed by various techniques: e.g., reconstruction of the target structure by iterative approaches such as rigorous coupled wave analysis or finite element methods; library searches; and principal component analysis.
The targets used by some conventional scatterometers are relatively large, e.g., 40 μm by 40 μm, gratings and the measurement beam generates a spot that is smaller than the grating (i.e., the grating is underfilled). This simplifies mathematical reconstruction of the target as it can be regarded as infinite. However, in order to reduce the size of the targets, e.g., to 10 μm by 10 μm or less, e.g., so they can be positioned in amongst product features, rather than in the scribe lane, metrology has been proposed in which the grating is made smaller than the measurement spot (i.e., the grating is overfilled). Typically such targets are measured using dark field scatterometry in which the zeroth order of diffraction (corresponding to a specular reflection) is blocked, and only higher orders processed. Diffraction-based overlay using dark-field detection of the diffraction orders enables overlay measurements on smaller targets. These targets can be smaller than the illumination spot and may be surrounded by product structures on a wafer. Multiple targets can be measured in one image.
In the known metrology technique, overlay measurement results are obtained by measuring the target twice under certain conditions, while either rotating the target or changing the illumination mode or imaging mode to obtain separately the −1st and the +1st diffraction order intensities. Comparing these intensities for a given grating provides a measurement of asymmetry in the grating, and asymmetry in an overlay grating can be used as an indicator of overlay error.
Although the known dark-field image-based overlay measurements are fast and computationally very simple (once calibrated), they rely on an assumption that overlay is the only cause of asymmetry in the target structure. Any other asymmetry in the stack, such as asymmetry of features within one or both of the overlaid gratings, also causes an asymmetry in the 1st orders. This asymmetry which is not related to the overlay clearly perturbs the overlay measurement, giving an inaccurate overlay result. Asymmetry in the bottom grating of the overlay grating is a common form of feature asymmetry. It may originate for example in wafer processing steps such as chemical-mechanical polishing (CMP), performed after the bottom grating was originally formed.
Accordingly at this time the skilled person has to choose between, on the one hand, a simple and fast measurement process that gives overlay measurements but is subject to inaccuracies when other causes of asymmetry are present, and on the other hand more traditional techniques that are computationally intensive and typically require several measurements of large, underfilled gratings to avoid the pupil image is polluted with signal from the environment of the overlay grating, which hampers the reconstruction on this.
Therefore, it is desired to distinguish the contributions to target structure asymmetry that are caused by overlay and other effects in a more direct and simple way, while minimizing the area of the substrate required for target structures.
SUMMARY
It is desirable to provide a method and apparatus for overlay metrology using target structures, in which throughput and accuracy can be improved over prior published techniques. Furthermore, although the invention is not limited to this, it would be of great advantage, if this could be applied to small target structures that can be read out with the dark-field image-based technique.
According to a first aspect of the present invention, there is provided a method of measuring parameters of a lithographic process, the method comprising using the lithographic process to form a plurality of target structures distributed at a plurality of locations across the substrate and having overlaid periodic structures with a number of different overlay bias values distributed across said target structures, at least some of the target structures comprising a number of overlaid periodic structures that is fewer than said number of different overlay bias values, illuminating the target structures and detecting asymmetries in the radiation scattered by said target structures, using the detected asymmetries to determine said parameters.
According to a second aspect of the present invention, there is provided an inspection apparatus for measuring parameters of a lithographic process, the apparatus comprising a support for a substrate having a plurality of target structures distributed at a plurality of locations across the substrate and having overlaid periodic structures with a number of different overlay bias values distributed across said target structures, at least some of the target structures comprising a number of overlaid periodic structures that is fewer than said number of different overlay bias values, an optical system for illuminating the target structures and detecting asymmetries in the radiation scattered by said target structures, and a processor arranged to use the detected asymmetries to determine said parameters.
According to a third aspect of the present invention, there is provided a computer program product comprising machine-readable instructions for causing a processor to perform the processing of a method according to the first aspect.
According to a fourth aspect of the present invention, there is provided a lithographic system comprising a lithographic apparatus comprising, an illumination optical system arranged to illuminate a pattern, a projection optical system arranged to project an image of the pattern onto a substrate, and an inspection apparatus according to the second aspect. The lithographic apparatus is arranged to use the measurement results from the inspection apparatus in applying the pattern to further substrates.
According to a fifth aspect of the present invention, there is provided a method of manufacturing devices wherein a device pattern is applied to a series of substrates using a lithographic process, the method including inspecting at least one periodic structure formed as part of or beside said device pattern on at least one of said substrates using a method according to the first aspect and controlling the lithographic process for later substrates in accordance with the result of the method.
According to a sixth aspect of the present invention, there is provided a substrate comprising a plurality of target structures distributed at a plurality of locations across the substrate and having overlaid periodic structures with a number of different overlay bias values distributed across said target structures, at least some of the target structures comprising a number of overlaid periodic structures that is fewer than said number of different overlay bias values.
Further features and advantages of the invention, as well as the structure and operation of various embodiments of the invention, are described in detail below with reference to the accompanying drawings. It is noted that the invention is not limited to the specific embodiments described herein. Such embodiments are presented herein for illustrative purposes only. Additional embodiments will be apparent to persons skilled in the relevant art(s) based on the teachings contained herein.



BRIEF DESCRIPTION OF THE DRAWINGS/FIGURES
The accompanying drawings, which are incorporated herein and form part of the specification, illustrate the present invention and, together with the description, further serve to explain the principles of the invention and to enable a person skilled in the relevant art(s) to make and use the invention.
FIG. 1 depicts a lithographic apparatus, according to an embodiment of the invention.
FIG. 2 depicts a lithographic cell or cluster, according to an embodiment of the invention.
FIGS. 3A to 3D show (a) a schematic diagram of a dark field scatterometer for use in measuring targets according to embodiments of the invention using a first pair of illumination apertures, (b) a detail of diffraction spectrum of a target grating for a given direction of illumination (c) a second pair of illumination apertures providing further illumination modes in using the scatterometer for diffraction based overlay measurements and (d) a third pair of illumination apertures combining the first and second pair of apertures.
FIG. 4 depicts a known form of multiple grating target and an outline of a measurement spot on a substrate.
FIG. 5 depicts an image of the target of FIG. 4 obtained in the scatterometer of FIG. 3.
FIG. 6 is a flowchart showing an overlay measurement method, according to embodiments of the present invention.
FIG. 7 illustrates principles of overlay measurement in an ideal target structure, not subject to feature asymmetry.
FIG. 8 illustrates principles of overlay measurement in a non-ideal target structure, with correction of feature asymmetry using an embodiment of the present invention.
FIG. 9 illustrates a patterning device having product areas, scribe lane areas and metrology targets in both the scribe lane and product areas.
FIG. 10 illustrates an embodiment of a patterning device for use with embodiments of the present invention.
FIG. 11 illustrates three composite grating structures distributed across a substrate and having a bias scheme that can be used in embodiments of the present invention, combining component gratings for two orthogonal directions of overlay measurement. and
FIG. 12 illustrates five composite grating structures distributed across a substrate and having a bias scheme that can be used in embodiments of the present invention.



The features and advantages of the present invention will become more apparent from the detailed description set forth below when taken in conjunction with the drawings, in which like reference characters identify corresponding elements throughout. In the drawings, like reference numbers generally indicate identical, functionally similar, and/or structurally similar elements. The drawing in which an element first appears is indicated by the leftmost digit(s) in the corresponding reference number.
DETAILED DESCRIPTION
This specification discloses one or more embodiments that incorporate the features of this invention. The disclosed embodiment(s) merely exemplify the invention. The scope of the invention is not limited to the disclosed embodiment(s). The invention is defined by the claims appended hereto.
The embodiment(s) described, and references in the specification to “one embodiment”, “an embodiment”, “an example embodiment”, etc., indicate that the embodiment(s) described may include a particular feature, structure, or characteristic, but every embodiment may not necessarily include the particular feature, structure, or characteristic. Moreover, such phrases are not necessarily referring to the same embodiment. Further, when a particular feature, structure, or characteristic is described in connection with an embodiment, it is understood that it is within the knowledge of one skilled in the art to effect such feature, structure, or characteristic in connection with other embodiments whether or not explicitly described.
Embodiments of the invention may be implemented in hardware, firmware, software, or any combination thereof. Embodiments of the invention may also be implemented as instructions stored on a machine-readable medium, which may be read and executed by one or more processors. A machine-readable medium may include any mechanism for storing or transmitting information in a form readable by a machine (e.g., a computing device). For example, a machine-readable medium may include read only memory (ROM); random access memory (RAM); magnetic disk storage media; optical storage media; flash memory devices; electrical, optical, acoustical or other forms of propagated signals (e.g., carrier waves, infrared signals, digital signals, etc.), and others. Further, firmware, software, routines, instructions may be described herein as performing certain actions. However, it should be appreciated that such descriptions are merely for convenience and that such actions in fact result from computing devices, processors, controllers, or other devices executing the firmware, software, routines, instructions, etc.
Before describing embodiments of the invention in detail, it is instructive to present an example environment in which embodiments of the present invention may be implemented.
FIG. 1 schematically depicts a lithographic apparatus LA. The apparatus includes an illumination system (illuminator) IL configured to condition a radiation beam B (e.g., UV radiation or DUV radiation), a patterning device support or support structure (e.g., a mask table) MT constructed to support a patterning device (e.g., a mask) MA and connected to a first positioner PM configured to accurately position the patterning device in accordance with certain parameters; a substrate table (e.g., a wafer table) WT constructed to hold a substrate (e.g., a resist coated wafer) W and connected to a second positioner PW configured to accurately position the substrate in accordance with certain parameters; and a projection system (e.g., a refractive projection lens system) PS configured to project a pattern imparted to the radiation beam B by patterning device MA onto a target portion C (e.g., including one or more dies) of the substrate W.
The illumination system may include various types of optical components, such as refractive, reflective, magnetic, electromagnetic, electrostatic or other types of optical components, or any combination thereof, for directing, shaping, or controlling radiation.
The patterning device support holds the patterning device in a manner that depends on the orientation of the patterning device, the design of the lithographic apparatus, and other conditions, such as for example whether or not the patterning device is held in a vacuum environment. The patterning device support can use mechanical, vacuum, electrostatic or other clamping techniques to hold the patterning device. The patterning device support may be a frame or a table, for example, which may be fixed or movable as required. The patterning device support may ensure that the patterning device is at a desired position, for example with respect to the projection system. Any use of the terms “reticle” or “mask” herein may be considered synonymous with the more general term “patterning device.”
The term “patterning device” used herein should be broadly interpreted as referring to any device that can be used to impart a radiation beam with a pattern in its cross-section such as to create a pattern in a target portion of the substrate. It should be noted that the pattern imparted to the radiation beam may not exactly correspond to the desired pattern in the target portion of the substrate, for example if the pattern includes phase-shifting features or so called assist features. Generally, the pattern imparted to the radiation beam will correspond to a particular functional layer in a device being created in the target portion, such as an integrated circuit.
The patterning device may be transmissive or reflective. Examples of patterning devices include masks, programmable mirror arrays, and programmable LCD panels. Masks are well known in lithography, and include mask types such as binary, alternating phase-shift, and attenuated phase-shift, as well as various hybrid mask types. An example of a programmable mirror array employs a matrix arrangement of small mirrors, each of which can be individually tilted so as to reflect an incoming radiation beam in different directions. The tilted mirrors impart a pattern in a radiation beam, which is reflected by the mirror matrix.
The term “projection system” used herein should be broadly interpreted as encompassing any type of projection system, including refractive, reflective, catadioptric, magnetic, electromagnetic and electrostatic optical systems, or any combination thereof, as appropriate for the exposure radiation being used, or for other factors such as the use of an immersion liquid or the use of a vacuum. Any use of the term “projection lens” herein may be considered as synonymous with the more general term “projection system”.
As here depicted, the apparatus is of a transmissive type (e.g., employing a transmissive mask). Alternatively, the apparatus may be of a reflective type (e.g., employing a programmable mirror array of a type as referred to above, or employing a reflective mask).
The lithographic apparatus may be of a type having two (dual stage) or more substrate tables (and/or two or more mask tables). In such “multiple stage” machines the additional tables may be used in parallel, or preparatory steps may be carried out on one or more tables while one or more other tables are being used for exposure.
The lithographic apparatus may also be of a type wherein at least a portion of the substrate may be covered by a liquid having a relatively high refractive index, e.g., water, so as to fill a space between the projection system and the substrate. An immersion liquid may also be applied to other spaces in the lithographic apparatus, for example, between the mask and the projection system. Immersion techniques are well known in the art for increasing the numerical aperture of projection systems. The term “immersion” as used herein does not mean that a structure, such as a substrate, must be submerged in liquid, but rather only means that liquid is located between the projection system and the substrate during exposure.
Referring to FIG. 1, the illuminator IL receives a radiation beam from a radiation source SO. The source and the lithographic apparatus may be separate entities, for example when the source is an excimer laser. In such cases, the source is not considered to form part of the lithographic apparatus and the radiation beam is passed from the source SO to the illuminator IL with the aid of a beam delivery system BD including, for example, suitable directing mirrors and/or a beam expander. In other cases the source may be an integral part of the lithographic apparatus, for example when the source is a mercury lamp. The source SO and the illuminator IL, together with the beam delivery system BD if required, may be referred to as a radiation system.
The illuminator IL may include an adjuster AD for adjusting the angular intensity distribution of the radiation beam. Generally, at least the outer and/or inner radial extent (commonly referred to as σ-outer and σ-inner, respectively) of the intensity distribution in a pupil plane of the illuminator can be adjusted. In addition, the illuminator IL may include various other components, such as an integrator IN and a condenser CO. The illuminator may be used to condition the radiation beam, to have a desired uniformity and intensity distribution in its cross section.
The radiation beam B is incident on the patterning device (e.g., mask) MA, which is held on the patterning device support (e.g., mask table MT), and is patterned by the patterning device. Having traversed the patterning device (e.g., mask) MA, the radiation beam B passes through the projection system PS, which focuses the beam onto a target portion C of the substrate W. With the aid of the second positioner PW and position sensor IF (e.g., an interferometric device, linear encoder, 2-D encoder or capacitive sensor), the substrate table WT can be moved accurately, e.g., so as to position different target portions C in the path of the radiation beam B. Similarly, the first positioner PM and another position sensor (which is not explicitly depicted in FIG. 1) can be used to accurately position the patterning device (e.g., mask) MA with respect to the path of the radiation beam B, e.g., after mechanical retrieval from a mask library, or during a scan. In general, movement of the patterning device support (e.g., mask table) MT may be realized with the aid of a long-stroke module (coarse positioning) and a short-stroke module (fine positioning), which form part of the first positioner PM. Similarly, movement of the substrate table WT may be realized using a long-stroke module and a short-stroke module, which form part of the second positioner PW. In the case of a stepper (as opposed to a scanner) the patterning device support (e.g., mask table) MT may be connected to a short-stroke actuator only, or may be fixed.
Patterning device (e.g., mask) MA and substrate W may be aligned using mask alignment marks M1, M2 and substrate alignment marks P1, P2. Although the substrate alignment marks as illustrated occupy dedicated target portions, they may be located in spaces between target portions (these are known as scribe-lane alignment marks). Similarly, in situations in which more than one die is provided on the patterning device (e.g., mask) MA, the mask alignment marks may be located between the dies. Small alignment markers may also be included within dies, in amongst the device features, in which case it is desirable that the markers be as small as possible and not require any different imaging or process conditions than adjacent features. The alignment system, which detects the alignment markers is described further below.
The depicted apparatus could be used in at least one of the following modes:
1. In step mode, the patterning device support (e.g., mask table) MT and the substrate table WT are kept essentially stationary, while an entire pattern imparted to the radiation beam is projected onto a target portion C at one time (i.e., a single static exposure). The substrate table WT is then shifted in the X and/or Y direction so that a different target portion C can be exposed. In step mode, the maximum size of the exposure field limits the size of the target portion C imaged in a single static exposure.
2. In scan mode, the patterning device support (e.g., mask table) MT and the substrate table WT are scanned synchronously while a pattern imparted to the radiation beam is projected onto a target portion C (i.e., a single dynamic exposure). The velocity and direction of the substrate table WT relative to the patterning device support (e.g., mask table) MT may be determined by the (de-)magnification and image reversal characteristics of the projection system PS. In scan mode, the maximum size of the exposure field limits the width (in the non-scanning direction) of the target portion in a single dynamic exposure, whereas the length of the scanning motion determines the height (in the scanning direction) of the target portion.
3. In another mode, the patterning device support (e.g., mask table) MT is kept essentially stationary holding a programmable patterning device, and the substrate table WT is moved or scanned while a pattern imparted to the radiation beam is projected onto a target portion C. In this mode, generally a pulsed radiation source is employed and the programmable patterning device is updated as required after each movement of the substrate table WT or in between successive radiation pulses during a scan. This mode of operation can be readily applied to maskless lithography that utilizes programmable patterning device, such as a programmable mirror array of a type as referred to above.
Combinations and/or variations on the above described modes of use or entirely different modes of use may also be employed.
Lithographic apparatus LA is of a so-called dual stage type which has two substrate tables WTa, WTb and two stations—an exposure station and a measurement station—between which the substrate tables can be exchanged. While one substrate on one substrate table is being exposed at the exposure station, another substrate can be loaded onto the other substrate table at the measurement station and various preparatory steps carried out. The preparatory steps may include mapping the surface control of the substrate using a level sensor LS and measuring the position of alignment markers on the substrate using an alignment sensor AS. This enables a substantial increase in the throughput of the apparatus. If the position sensor IF is not capable of measuring the position of the substrate table while it is at the measurement station as well as at the exposure station, a second position sensor may be provided to enable the positions of the substrate table to be tracked at both stations.
As shown in FIG. 2, the lithographic apparatus LA forms part of a lithographic cell LC, also sometimes referred to a lithocell or cluster, which also includes apparatus to perform pre- and post-exposure processes on a substrate. Conventionally these include spin coaters SC to deposit resist layers, developers DE to develop exposed resist, chill plates CH and bake plates BK. A substrate handler, or robot, RO picks up substrates from input/output ports I/O1, I/O2, moves them between the different process apparatus and delivers then to the loading bay LB of the lithographic apparatus. These devices, which are often collectively referred to as the track, are under the control of a track control unit TCU which is itself controlled by the supervisory control system SCS, which also controls the lithographic apparatus via lithography control unit LACU. Thus, the different apparatus can be operated to maximize throughput and processing efficiency.
Examples of dark field metrology can be found in international patent applications WO 2009/078708 and WO 2009/106279 which documents are hereby incorporated by reference in their entirety. Further developments of the technique have been described in patent publications US20110027704A and US20110043791A and in published US patent application US 20120123581. The contents of all these applications are also incorporated herein by reference in their entireties.
A dark field metrology apparatus suitable for use in embodiments of the invention is shown in FIG. 3(a). A target grating T and diffracted rays are illustrated in more detail in FIG. 3(b). The dark field metrology apparatus may be a stand-alone device or incorporated in either the lithographic apparatus LA, e.g., at the measurement station, or the lithographic cell LC. An optical axis, which has several branches throughout the apparatus, is represented by a dotted line O. In this apparatus, light emitted by source 11 (e.g., a xenon lamp) is directed onto substrate W via a beam splitter 15 by an optical system comprising lenses 12, 14 and objective lens 16. These lenses are arranged in a double sequence of a 4F arrangement. A different lens arrangement can be used, provided that it still provides a substrate image onto a detector, and simultaneously allows for access of an intermediate pupil-plane for spatial-frequency filtering. Therefore, the angular range at which the radiation is incident on the substrate can be selected by defining a spatial intensity distribution in a plane that presents the spatial spectrum of the substrate plane, here referred to as a (conjugate) pupil plane. In particular, this can be done by inserting an aperture plate 13 of suitable form between lenses 12 and 14, in a plane which is a back-projected image of the objective lens pupil plane. In the example illustrated, aperture plate 13 has different forms, labeled 13N and 13S, allowing different illumination modes to be selected. The illumination system in the present examples forms an off-axis illumination mode. In the first illumination mode, aperture plate 13N provides off-axis from a direction designated, for the sake of description only, as ‘north’. In a second illumination mode, aperture plate 13S is used to provide similar illumination, but from an opposite direction, labeled ‘south’. Other modes of illumination are possible by using different apertures. The rest of the pupil plane is desirably dark as any unnecessary light outside the desired illumination mode will interfere with the desired measurement signals.
As shown in FIG. 3(b), target grating T is placed with substrate W normal to the optical axis O of objective lens 16. A ray of illumination I impinging on grating T from an angle off the axis O gives rise to a zeroth order ray (solid line 0) and two first order rays (dot-chain line +1 and double dot-chain line −1). It should be remembered that with an overfilled small target grating, these rays are just one of many parallel rays covering the area of the substrate including metrology target grating T and other features. Since the aperture in plate 13 has a finite width (necessary to admit a useful quantity of light, the incident rays I will in fact occupy a range of angles, and the diffracted rays 0 and +1/−1 will be spread out somewhat. According to the point spread function of a small target, each order +1 and −1 will be further spread over a range of angles, not a single ideal ray as shown. Note that the grating pitches and illumination angles can be designed or adjusted so that the first order rays entering the objective lens are closely aligned with the central optical axis. The rays illustrated in FIGS. 3(a) and 3(b) are shown somewhat off axis, purely to enable them to be more easily distinguished in the diagram.
At least the 0 and +1 orders diffracted by the target on substrate W are collected by objective lens 16 and directed back through beam splitter 15. Returning to FIG. 3(a), both the first and second illumination modes are illustrated, by designating diametrically opposite apertures labeled as north (N) and south (S). When the incident ray I is from the north side of the optical axis, that is when the first illumination mode is applied using aperture plate 13N, the +1 diffracted rays, which are labeled +1(N), enter the objective lens 16. In contrast, when the second illumination mode is applied using aperture plate 13S the −1 diffracted rays (labeled −1(S)) are the ones which enter the lens 16.
A second beam splitter 17 divides the diffracted beams into two measurement branches. In a first measurement branch, optical system 18 forms a diffraction spectrum (pupil plane image) of the target on first sensor 19 (e.g., a CCD or CMOS sensor) using the zeroth and first order diffractive beams. Each diffraction order hits a different point on the sensor, so that image processing can compare and contrast orders. The pupil plane image captured by sensor 19 can be used for focusing the metrology apparatus and/or normalizing intensity measurements of the first order beam. The pupil plane image can also be used for many measurement purposes such as reconstruction, which are not the subject of the present disclosure.
In the second measurement branch, optical system 20, 22 forms an image of the target on the substrate W on sensor 23 (e.g., a CCD or CMOS sensor). In the second measurement branch, an aperture stop 21 is provided in a plane that is conjugate to the pupil-plane. Aperture stop 21 functions to block the zeroth order diffracted beam so that the image of the target formed on sensor 23 is formed only from the −1 or +1 first order beam. The images captured by sensors 19 and 23 are output to image processor and controller PU, the function of which will depend on the particular type of measurements being performed. Note that the term ‘image’ is used here in a broad sense. An image of the grating lines as such will not be formed, if only one of the −1 and +1 orders is present.
The particular forms of aperture plate 13 and field stop 21 shown in FIG. 3 are purely examples. In another embodiment of the invention, on-axis illumination of the targets is used and an aperture stop with an off-axis aperture is used to pass substantially only one first order of diffracted light to the sensor. In yet other embodiments, 2nd, 3rd and higher order beams (not shown in FIG. 3) can be used in measurements, instead of or in addition to the first order beams.
In order to make the illumination adaptable to these different types of measurement, the aperture plate 13 may comprise a number of aperture patterns formed around a disc, which rotates to bring a desired pattern into place. Alternatively or in addition, a set of plates 13 could be provided and swapped, to achieve the same effect. A programmable illumination device such as a deformable mirror array or transmissive spatial sight modulator can be used also. Moving mirrors or prisms can be used as another way to adjust the illumination mode.
As just explained in relation to aperture plate 13, the selection of diffraction orders for imaging can alternatively be achieved by altering the pupil-stop 21, or by substituting a pupil-stop having a different pattern, or by replacing the fixed field stop with a programmable spatial light modulator. In that case the illumination side of the measurement optical system can remain constant, while it is the imaging side that has first and second modes. In the present disclosure, therefore, there are effectively three types of measurement method, each with its own advantages and disadvantages. In one method, the illumination mode is changed to measure the different orders. In another method, the imaging mode is changed. In a third method, the illumination and imaging modes remain unchanged, but the target is rotated through 180 degrees. In each case the desired effect is the same, namely to select first and second portions of the non-zero order diffracted radiation which are symmetrically opposite one another in the diffraction spectrum of the target. In principle, the desired selection of orders could be obtained by a combination of changing the illumination modes and the imaging modes simultaneously, but that is likely to bring disadvantages for no advantage, so it will not be discussed further.
While the optical system used for imaging in the present examples has a wide entrance pupil which is restricted by the field stop 21, in other embodiments or applications the entrance pupil size of the imaging system itself may be small enough to restrict to the desired order, and thus serve also as the field stop. Different aperture plates are shown in FIGS. 3(c) and (d) which can be used as described further below.
Typically, a target grating will be aligned with its grating lines running either north-south or east-west. That is to say, a grating will be aligned in the X direction or the Y direction of the substrate W. Note that aperture plate 13N or 13S can only be used to measure gratings oriented in one direction (X or Y depending on the set-up). For measurement of an orthogonal grating, rotation of the target through 90° and 270° might be implemented. More conveniently, however, illumination from east or west is provided in the illumination optics, using the aperture plate 13E or 13W, shown in FIG. 3(c). The aperture plates 13N to 13W can be separately formed and inter changed, or they may be a single aperture plate which can be rotated by 90, 180 or 270 degrees. As mentioned already, the off-axis apertures illustrated in FIG. 3(c) could be provided in field stop 21 instead of in illumination aperture plate 13. In that case, the illumination would be on axis.
FIG. 3(d) shows a third pair of aperture plates that can be used to combine the illumination modes of the first and second pairs. Aperture plate 13NW has apertures at north and east, while aperture plate 13SE has apertures at south and west. Provided that cross-talk between these different diffraction signals is not too great, measurements of both X and Y gratings can be performed without changing the illumination mode.
FIG. 4 depicts a composite target formed on a substrate according to known practice. The composite target comprises four gratings 32 to 35 positioned closely together so that they will all be within a measurement spot 31 formed by the illumination beam of the metrology apparatus. The four targets thus are all simultaneously illuminated and simultaneously imaged on sensors 19 and 23. In an example dedicated to overlay measurement, gratings 32 to 35 are themselves composite gratings formed by overlying gratings that are patterned in different layers of the semi-conductor device formed on substrate W. Gratings 32 to 35 may have differently biased overlay offsets in order to facilitate measurement of overlay between the layers in which the different parts of the composite gratings are formed. Gratings 32 to 35 may also differ in their orientation, as shown, so as to diffract incoming radiation in X and Y directions. In one example, gratings 32 and 34 are X-direction gratings with biases of the +d, −d, respectively. This means that grating 32 has its overlying components arranged so that if they were both printed exactly at their nominal locations one of the components would be offset relative to the other by a distance d. Grating 34 has its components arranged so that if perfectly printed there would be an offset of d but in the opposite direction to the first grating and so on. Gratings 33 and 35 are Y-direction gratings with offsets +d and −d respectively. While four gratings are illustrated, another embodiment might require a larger matrix to obtain the desired accuracy. For example, a 3×3 array of nine composite gratings may have biases −4d, −3d, −2d, −d, 0, +d, +2d, +3d, +4d. Separate images of these gratings can be identified in the image captured by sensor 23.
FIG. 5 shows an example of an image that may be formed on and detected by the sensor 23, using the target of FIG. 4 in the apparatus of FIG. 3, using the aperture plates 13NW or 13SE from FIG. 3(d). While the pupil plane image sensor 19 cannot resolve the different individual gratings 32 to 35, the image sensor 23 can do so. The dark rectangle represents the field of the image on the sensor, within which the illuminated spot 31 on the substrate is imaged into a corresponding circular area 41. Within this, rectangular areas 42-45 represent the images of the small target gratings 32 to 35. If the gratings are located in product areas, product features may also be visible in the periphery of this image field. Image processor and controller PU processes these images using pattern recognition to identify the separate images 42 to 45 of gratings 32 to 35. In this way, the images do not have to be aligned very precisely at a specific location within the sensor frame, which greatly improves throughput of the measuring apparatus as a whole. However the need for accurate alignment remains if the imaging process is subject to non-uniformities across the image field. In one embodiment of the invention, four positions P1 to P4 are identified and the gratings are aligned as much as possible with these known positions.
Once the separate images of the gratings have been identified, the intensities of those individual images can be measured, e.g., by averaging or summing selected pixel intensity values within the identified areas. Intensities and/or other properties of the images can be compared with one another. These results can be combined to measure different parameters of the lithographic process. Overlay performance is an important example of such a parameter.
FIG. 6 illustrates how, using for example the method described in application WO 2011/012624, which is incorporated by reference herein in its entirety, overlay error between the two layers containing the component gratings 32 to 35 is measured through asymmetry of the gratings, as revealed by comparing their intensities in the +1 order and −1 order dark field images. At step S1, the substrate, for example a semiconductor wafer, is processed through the lithographic cell of FIG. 2 one or more times, to create a structure including the overlay targets 32-35. At S2, using the metrology apparatus of FIG. 3, an image of the gratings 32 to 35 is obtained using only one of the first order diffracted beams (say −1). Then, whether by changing the illumination mode, or changing the imaging mode, or by rotating substrate W by 180° in the field of view of the metrology apparatus, a second image of the gratings using the other first order diffracted beam (+1) can be obtained (step S3). Consequently the +1 diffracted radiation is captured in the second image.
Note that, by including only half of the first order diffracted radiation in each image, the ‘images’ referred to here are not conventional dark field microscopy images. The individual grating lines will not be resolved. Each grating will be represented simply by an area of a certain intensity level. In step S4, a region of interest (ROI) is carefully identified within the image of each component grating, from which intensity levels will be measured. This is done because, particularly around the edges of the individual grating images, intensity values can be highly dependent on process variables such as resist thickness, composition, line shape, as well as edge effects generally.
Having identified the ROI for each individual grating and measured its intensity, the asymmetry of the grating structure, and hence overlay error, can then be determined. This is done by the image processor and controller PU in step S5 comparing the intensity values obtained for +1 and −1 orders for each grating 32-35 to identify any difference in their intensity, and (S6) from knowledge of the overlay biases of the gratings to determine overlay error in the vicinity of the target T.
In the prior applications, mentioned above, various techniques are disclosed for improving the quality of overlay measurements using the basic method mentioned above. For example, the intensity differences between images may be attributable to differences in the optical paths used for the different measurements, and not purely asymmetry in the target. The illumination source 11 may be such that the intensity and/or phase of illumination spot 31 is not uniform. Corrections can the determined and applied to minimize such errors, by reference for example to the position of the target image in the image field of sensor 23. These techniques are explained in the prior applications, and will not be explained here in further detail. They may be used in combination with the techniques newly disclosed in the present application, which will now be described.
In the present application, we propose the use of gratings with three or more biases distributed at locations across the substrate to measure overlay by the method of FIG. 6. By measuring asymmetries for gratings with at least three different biases, the calculations in step S6 can be modified so as to correct for feature asymmetry in the target gratings, such as is caused by bottom grating asymmetry (BGA) in a practical lithographic process. Using a multi-parameter model of overlay error across the substrate enables the distribution of the overlay-biased gratings at locations across the substrate, saving real-estate as it not necessary to have compound targets with all the overlay-biased gratings located together.
In FIG. 7 a curve 702 illustrates the relationship between overlay error OV and measured asymmetry A for an ‘ideal’ target having zero offset and no feature asymmetry within the individual gratings forming the overlay grating. These graphs are to illustrate the principles of the invention only, and in each graph, the units of measured asymmetry A and overlay error OV are arbitrary. Examples of actual dimensions will be given further below.
In the ‘ideal’ situation of FIG. 7, the curve 702 indicates that the measured asymmetry A has a sinusoidal relationship with the overlay. The period P of the sinusoidal variation corresponds to the period of the gratings. The sinusoidal form is pure in this example, but could include harmonics in other circumstances. For the sake of simplicity, it is assumed in this example (a) that only first order diffracted radiation from the targets reaches the image sensor 23 (or its equivalent in a given embodiment), and (b) that the experimental target design is such that within these first orders a pure sine-relation between intensity and overlay between top and bottom grating results. Whether this is true in practice is a function of the optical system design, the wavelength of the illuminating radiation and the pitch P of the grating, and the design and stack of the target. In an embodiment where 2nd, 3rd or higher orders also contribute to the intensities measured by sensor 23, or where the target design introduces harmonics in the first order, the skilled reader can readily adapt the teaching of the present application to allow for higher orders being present.
As mentioned above, biased gratings can be used to measure overlay, rather than relying on a single measurement. This bias has a known value defined in the patterning device (e.g., a reticle) from which it was made, that serves as an on-wafer calibration of the overlay corresponding to the measured signal. In the drawing, the calculation is illustrated graphically. In steps S1-S5, asymmetry measurements A(+d) and A(−d) are obtained for component gratings having biases +d an −d respectively. Fitting these measurements to the sinusoidal curve gives points 704 and 706 as shown. Knowing the biases, the true overlay error OV can be calculated. The pitch P of the sinusoidal curve is known from the design of the target. The vertical scale of the curve 702 is not known to start with, but is an unknown factor which we can call a 1st harmonic proportionality constant, K1. Using two measurements with of gratings with different, known biases one can solve two equations to calculate the unknowns K1 and overlay OV.
FIG. 8 shows the effect of introducing feature asymmetry, for example by the effect of processing steps on the bottom grating layer. The ‘ideal’ sinusoidal curve 702 no longer applies. However, the inventors have recognized that, at least approximately, bottom grating asymmetry or other feature asymmetry has the effect of adding an offset to the asymmetry value A, which is relatively constant across all overlay values. The resulting curve is shown as 712 in the diagram, with label ABGA indicating the offset due to feature asymmetry. By providing multiple gratings with a biasing scheme having three or more different bias values, accurate overlay measurements can still be obtained by fitting the measurements to the off-set sine curve 712 and eliminating the constant.
For a simple example to illustrate the principle of the modified measurement and calculations, FIG. 8 shows three measurement points 714, 716 and 718 fitted to the curve 712. The points 714 and 716 are measured from gratings having bias +d and −d, the same as for the points 704 and 706 in FIG. 7. A third asymmetry measurement from a grating with zero bias (in this example) is plotted at 718. Fitting the curve to three points allows the constant asymmetry value ABGA that is due to feature asymmetry to be separated from the sinusoidal contribution AOV that is due to overlay error, so that the overlay error can be calculated more accurately.
As noted already, the overlay calculations of modified step S6 rely on certain assumptions. Firstly, it is assumed that 1st order intensity asymmetry due to the feature asymmetry (for example BGA) is independent of the overlay for the overlay range of interest, and as a result it can be described by a constant offset K0. The validity of this assumption has been tested in model-based simulations. Another assumption is that intensity asymmetry behaves as a sine function of the overlay, with the period P corresponding to the grating pitch. The number of harmonics can be designed to be small for diffraction-based overlay, by using a small pitch-wavelength ratio that only allows for a small number of propagating diffraction orders from the grating. Therefore, in some embodiments, the overlay contribution to the intensity-asymmetry may be assumed to be only sinusoidal with a 1st harmonic, and if necessary a 2nd harmonic. Also, in the target design, line-widths and spacings can be used for optimization, tuning for the presence of mainly a first harmonic, or first two or three harmonics.
FIG. 9 shows schematically the overall layout of a patterning device M. The metrology targets 92 may be included in a scribe lane portion of the applied pattern, between functional device pattern areas 90. As is well known, patterning device M may contain a single device pattern, or an array of device patterns if the field of the lithographic apparatus is large enough to accommodate them. The example in FIG. 9 shows four device areas labeled D1 to D4. Scribe lane targets 92 are placed adjacent these device pattern areas and between them. On the finished substrate, such as a semiconductor device, the substrate W will be diced into individual devices by cutting along these scribe lanes, so that the presence of the targets does not reduce the area available for functional device patterns. Where targets are small in comparison with conventional metrology targets, they may also be deployed within the device area, to allow closer monitoring of lithography and process performance across the substrate. Some targets 94 of this type are shown in device area D1. While FIG. 9 shows the patterning device M, the same pattern is reproduced on the substrate W after the lithographic process, and consequently this description applies to the substrate W as well as the patterning device.
FIG. 10 shows in more detail one of the product areas 90 on the patterning device M, showing the targets 92 and 94 in more detail. The same pattern is produced and repeated at each field on the substrate. Product areas are labeled D and scribe-line areas are labeled SL. In the device areas 90, targets 94 are spread with a desired density at different locations among the product features. In the scribe-lane areas SL, targets 92 are provided. The targets 92 and 94 have, for example, the form illustrated in FIG. 4, and can be measured using the dark-field imaging sensor 23 of the scatterometer of FIG. 3.
FIG. 11 illustrates three composite grating structures distributed across a substrate and having a bias scheme that can be used in embodiments of the present invention, combining component gratings for two orthogonal directions of overlay measurement. FIG. 11 shows three example targets 111, 112 and 113, which can be used to implement overlay model parameter measurement with BGA correction. To solve for the overlay, at least three biases are required, because of the at least three unknowns: K0, K1, and overlay.
Embodiments of the present invention may have single biased gratings distributed over the area to be measured: the field, die or smaller. Other embodiments, such as illustrated in FIG. 11 are compatible with 2×2 target designs. With the notations: bias=+d. bias=−d or bias=0, for example 10×10 μm2 targets can be produced with gratings using the following bias-scheme with three layouts in this example:

    
    
        Target 111: +d,X; +d,Y, −d,Y, −d,X
        Target 112: +d,X; +d,Y, 0,Y, 0,X
        Target 113: 0,X; 0,Y, −d,Y, −d,X
    
    


All these three targets can also be used to calculate local values of overlay using pupil-detection diffraction based overlay (provided that the scatterometer spot size is small enough) or dark-field diffraction based overlay methods, using symmetric and asymmetric first harmonic methods. Simultaneously, local results can be compared with the outcome of the model-parameterized model, for example the described six-parameter model, recalculated to the local values, but including all BGA and higher harmonics corrections. It will be appreciated that embodiments of the present invention are not limited to only two higher harmonics.
The common property of these targets is that they can all be read out for overlay also with the dark-field image-based technique known from the previous patent applications mentioned above. This enables BGA-corrected overlay at small targets without stack-reconstruction.
FIG. 11 shows composite grating targets having three different biases, in which both X- and Y-direction gratings are provided across the target areas. The bias schemes for each direction are shown, but of course other schemes can be envisaged, provided that at least two, and preferably at least three different biases are included distributed across the substrate in the individual target structures. The X and Y gratings with each bias value are side-by-side, though that is not essential. The X and Y gratings are interspersed with one another in an alternating pattern, so that different X gratings are diagonally spaced, not side-by-side with one another, and Y gratings are diagonally spaced, not side-by-side with one another. This arrangement may help to reduce cross-talk between diffraction signals of the different biased gratings. The whole arrangement thus allows a compact target design, without good performance. While the component gratings in FIG. 11 are square, composite grating targets with X and Y component gratings can also be made with elongate gratings. Examples are described for example in published patent application US20120044470, which is incorporated by reference herein in its entirety.
With reference to FIG. 12, one biased grating per target (per direction) may also be used. For example, in order to take into account K0 and K1 there are five unknown parameters for the X-direction (Tx, Mx, Rx, K0x, K1x) and five unknown parameters for the Y-direction (Ty, My, Ry, K0y, K1y). One can then solve at least five equations per direction, therefore one needs five asymmetry measurements per direction. In this example, this means that five targets are sufficient in each direction (in the example of FIG. 12 there are five targets and each target has one biased grating per direction) in the ideal case with negligible noise. In practice, it is useful toe have redundancy, for example to average noise and possible model errors out.
In order to take into account three parameters K0, K1 and overlay, three different biases are required (e.g., +d, 0, −d). In this example case the number of targets (five) is higher than the number of biases (three). With reference to FIG. 12, five targets are depicted and there are three different biases (+d, 0, −d) although not all the targets are different. The configuration depicted in FIG. 12 is nevertheless sufficient to determine all the unknown parameters in this example, as mentioned above in the ideal case with negligible noise. With more redundancy than indicated in FIG. 12 noise may be averaged out and a better answer in terms of T, R, and M for X and Y may be achieved. More redundancy is also useful if the experimental reality is more complex than this 6-parameter model.
Overlay error may be determined by a direct comparison of the asymmetry in two biased gratings. The overlay may be modeled to have the following single-harmonic relation with asymmetry:




  
    
      
        A
        =
        
          
            K
            1
          
          ⁢
          
            sin
            ⁡
            
              (
              
                
                  2
                  ⁢
                  π
                  ⁢
                  
                    
                  
                  ⁢
                  OV
                
                P
              
              )
            
          
        
      
    
    
      
        (
        1
        )
      
    
  




    
    
        where A is the asymmetry between detected +1st and −1st diffraction order intensities, OV is overlay, P is the pitch of the target grating and K1 is the first harmonic proportionality constant. Two gratings are used in the x-direction and two gratings in y-direction. A typical dark-field diffraction-based overlay target has a real estate of 10×10 μm2.
    
    


The issue with the single-harmonic method of equation 1 is, that no bottom-grating asymmetry or higher orders than the 1st harmonic due to non-linearity can be taken into account. Using only two gratings per overlay error measurement only allows for the determination of two unknowns, K1 and OV. Any higher order term or asymmetric term will need for more gratings and thus more space.
In reality the relation above is a truncation of an infinite sum of pitch-periodic functions, for the asymmetry property: a sine-series, due to the pitch-periodicity in overlay of the signal from the grating structure, and the complete expression (including a constant term describing the asymmetry contribution which can be considered as the first cosine term) is:




  
    
      
        A
        =
        
          
            K
            0
          
          +
          
            
              ∑
              m
            
            ⁢
            
              
                K
                m
              
              ⁢
              
                sin
                ⁡
                
                  (
                  
                    
                      2
                      ⁢
                      π
                      ⁢
                      
                        
                      
                      ⁢
                      m
                      ⁢
                      
                        
                      
                      ⁢
                      OV
                    
                    P
                  
                  )
                
              
            
          
        
      
    
    
      
        (
        2
        )
      
    
  




The higher order K terms K2, K3, etc. are especially important for targets where the overlay targets have a relative small distance between the upper and lower overlaid gratings, thus having strong coupling. The K0 term is important for all process steps introducing asymmetries.
It is possible to add gratings to a target in one location on the substrate, in order to measure more harmonics in the equation (2). However, this has the drawback of an increased real estate per target. It can be acceptable in some cases to add to gratings to the conventional four grating target to give to a total of six for BGA correction. However, for many on-product applications not only K0 but also K2 and possibly K3 or higher are important. This would mean further increasing the real-estate for metrology targets, which is undesirable.
Embodiments of the present invention solve the overlay model parameters (i.e. not directly determining the overlay per target location but rather using a six-parameter model), combined with a bottom grating asymmetry term K0 and higher order K-terms for non-linearity correction. This is achieved by virtue of combining a distribution of targets over the die, or over the area to be measured and modeled for overlay.
An advantage is that the real estate per target is not increased. Furthermore, the method directly solves only for the model parameters, e.g., translation, magnification, and rotation, in which the semiconductor manufacturer is interested. This is because it is those parameters which can be controlled in the lithographic apparatus. Afterwards, if desired, or for verification purposes, the overlay can be retrieved locally by recalculating from the model parameters.
Embodiments of the present invention can be implemented by measuring only targets and, in the end, a distribution of biased gratings over the die. This is followed by solving the intensity-difference measurements for overlay and the required harmonics. The gratings have a distribution of biases across the substrate. This can be two, three or more biases. The number of biases used depends on how many harmonics are taken into account. In the single target case: if only K1 and overlay are the unknowns then two biases are sufficient; if K0, K1, and overlay are the unknowns then three biases are sufficient; if K0, K1, K2, and overlay are the unknowns then four biases, etc. In the case of a distribution over the field/die, as is the case in this embodiment, that is solved in one block (see equation below). Note that such a distribution over the die and decoupling of x- and y-direction metrology is experimentally very difficult for the Bar-in-Bar (BiB) targets in the image-based overlay (IBO) metrology.
The set of equations in an embodiment of the present invention are as follows, for K0, K1 and K2 and using a six-parameter intra-field model:



  
    
      A
      
        1
        ⁢
        x
      
    
    =
    
      
        K
        
          0
          ⁢
          x
        
      
      +
      
        
          K
          
            1
            ⁢
            x
          
        
        ⁢
        
          sin
          ⁡
          
            (
            
              
                
                  2
                  ⁢
                  π
                
                P
              
              ⁢
              
                (
                
                  
                    T
                    x
                  
                  +
                  
                    
                      M
                      x
                    
                    ⁢
                    
                      x
                      1
                    
                  
                  -
                  
                    
                      R
                      x
                    
                    ⁢
                    
                      y
                      1
                    
                  
                  +
                  
                    bias
                    1
                  
                
                )
              
            
            )
          
        
      
      +
      
        
          K
          
            2
            ⁢
            x
          
        
        ⁢
        
          sin
          ⁡
          
            (
            
              
                
                  4
                  ⁢
                  π
                
                P
              
              ⁢
              
                (
                
                  
                    T
                    x
                  
                  +
                  
                    
                      M
                      x
                    
                    ⁢
                    
                      x
                      1
                    
                  
                  -
                  
                    
                      R
                      x
                    
                    ⁢
                    
                      y
                      1
                    
                  
                  +
                  
                    bias
                    1
                  
                
                )
              
            
            )
          
        
      
    
  




  
    
      A
      
        1
        ⁢
        y
      
    
    =
    
      
        K
        
          0
          ⁢
          y
        
      
      +
      
        
          K
          
            1
            ⁢
            y
          
        
        ⁢
        
          sin
          ⁡
          
            (
            
              
                
                  2
                  ⁢
                  π
                
                P
              
              ⁢
              
                (
                
                  
                    T
                    y
                  
                  +
                  
                    
                      M
                      y
                    
                    ⁢
                    
                      y
                      1
                    
                  
                  +
                  
                    
                      R
                      y
                    
                    ⁢
                    
                      x
                      1
                    
                  
                  +
                  
                    bias
                    1
                  
                
                )
              
            
            )
          
        
      
      +
      
        
          K
          
            2
            ⁢
            y
          
        
        ⁢
        
          sin
          (
          
            
              
                
                  4
                  ⁢
                  π
                
                P
              
              ⁢
              
                (
                
                  
                    T
                    y
                  
                  +
                  
                    
                      M
                      y
                    
                    ⁢
                    
                      y
                      1
                    
                  
                  +
                  
                    
                      R
                      y
                    
                    ⁢
                    
                      x
                      1
                    
                  
                  +
                  
                    bias
                    1
                  
                
                )
              
              ⁢
              
                

              
              ⁢
              ⋮
              ⁢
              
                

              
              ⁢
              
                A
                nx
              
            
            =
            
              
                
                  K
                  
                    0
                    ⁢
                    x
                  
                
                +
                
                  
                    K
                    
                      1
                      ⁢
                      x
                    
                  
                  ⁢
                  
                    sin
                    ⁡
                    
                      (
                      
                        
                          
                            2
                            ⁢
                            π
                          
                          P
                        
                        ⁢
                        
                          (
                          
                            
                              T
                              x
                            
                            +
                            
                              
                                M
                                x
                              
                              ⁢
                              
                                x
                                n
                              
                            
                            -
                            
                              
                                R
                                x
                              
                              ⁢
                              
                                y
                                n
                              
                            
                            +
                            
                              bias
                              n
                            
                          
                          )
                        
                      
                      )
                    
                  
                
                +
                
                  
                    K
                    
                      2
                      ⁢
                      x
                    
                  
                  ⁢
                  
                    sin
                    ⁡
                    
                      (
                      
                        
                          
                            4
                            ⁢
                            π
                          
                          P
                        
                        ⁢
                        
                          (
                          
                            
                              T
                              x
                            
                            +
                            
                              
                                M
                                x
                              
                              ⁢
                              
                                x
                                n
                              
                            
                            -
                            
                              
                                R
                                x
                              
                              ⁢
                              
                                y
                                n
                              
                            
                            +
                            
                              bias
                              n
                            
                          
                          )
                        
                      
                      )
                    
                  
                  ⁢
                  
                    

                  
                  ⁢
                  
                    A
                    ny
                  
                
              
              =
              
                
                  K
                  
                    0
                    ⁢
                    y
                  
                
                +
                
                  
                    K
                    
                      1
                      ⁢
                      y
                    
                  
                  ⁢
                  
                    sin
                    ⁡
                    
                      (
                      
                        
                          
                            2
                            ⁢
                            π
                          
                          P
                        
                        ⁢
                        
                          (
                          
                            
                              T
                              y
                            
                            +
                            
                              
                                M
                                y
                              
                              ⁢
                              
                                y
                                n
                              
                            
                            +
                            
                              
                                R
                                y
                              
                              ⁢
                              
                                x
                                n
                              
                            
                            +
                            
                              bias
                              n
                            
                          
                          )
                        
                      
                      )
                    
                  
                
                +
                
                  
                    K
                    
                      2
                      ⁢
                      y
                    
                  
                  ⁢
                  
                    sin
                    (
                    
                      
                        
                          4
                          ⁢
                          π
                        
                        P
                      
                      ⁢
                      
                        (
                        
                          
                            T
                            y
                          
                          +
                          
                            
                              M
                              y
                            
                            ⁢
                            
                              y
                              n
                            
                          
                          +
                          
                            
                              R
                              y
                            
                            ⁢
                            
                              y
                              n
                            
                          
                          +
                          
                            bias
                            n
                          
                        
                        )
                      
                    
                  
                
              
            
          
        
      
    
  



Here, n is the number of X- and the number of Y-gratings (though they do not need necessarily be the same). This is different from other notation in which n refers to the harmonic number in the sine-expansion (here m is used as the harmonic number). Thus n is not the number of different biases, but is the number of different gratings, which all may have a different bias. However, a number of different gratings can also have the same bias (but different substrate position and different local overlay), as long as there is a sufficient number of different biases for the model to be solved over the substrate where the model is applied.
The gratings can both be in the scribe-lane and in the die. The scribe-lane gratings possibly have Km-values (where the m here stands for the K0, K1, K2, etc in the harmonic sine series) that are different from the in-die gratings, because processing and layers maybe slightly different. Separation into Km(scribe) and Km(in-die) in the model can take that into account when both fitting in the same modeling step.
Embodiments of the present invention use fast read-out of a large number of (ultra) small targets and then solve the measured information for the model-parameters over the field rather than locally at each measurement site (substrate location at which targets are placed). The large number of gratings or targets allows for the extraction of more than one overlay and more than one K-value. Furthermore, noise averaging occurs by solving at once for the model parameters.
In the discussion of FIG. 7, a first assumption was that the Km-values (m=0, 1, 2, . . . ) are constant over the substrate locations for which the model parameters are solved. Solvers exist to solve for such a multi-parameter system. These may be models such as least-squares non-linear, trust-region, Levenberg-Marquardt, etc. such as may be used in the scanners and steppers to correct for overlay and grid deformations, so that one can directly feed back the scatterometer measured model parameters into the scanners.
However, this assumption will in the general case not always be correct, due to local stack and etch variations from processing. In an embodiment, this is solved by floating the Km coefficients, for example as function of radius on the wafer substrate, which although possibly increasing the confidence interval, leads to improved accuracy of determined overlay. In a different embodiment, the coefficients can be considered constant over part of a die or field on the wafer, therefore not floated over such a part, however varying somewhat between neighboring die or field parts.
Some potential advantages of one or more embodiments of the present invention include: Overlay is determined more accurately with BGA correction and higher harmonics non-linearity included. Intrinsic target asymmetry contributions to the overlay are reduced. Higher-order terms are taken into account in the asymmetry versus overlay relation, which improves linearity of dark-field diffraction-based metrology. By averaging over many small targets or gratings, and calculating the model parameters as a “single” step per field, the noise on the measurement is averaged out. Also, printing errors (e.g., line edge roughness) and wafer errors are averaged out.
While the target structures described above are metrology targets specifically designed and formed for the purposes of measurement, in other embodiments, properties may be measured on targets which are functional parts of devices formed on the substrate. Many devices have regular, grating-like structures. The terms ‘target grating’ and ‘target structure’ as used herein do not require that the structure has been provided specifically for the measurement being performed.
In association with the physical grating structures of the targets as realized on substrates and patterning devices, an embodiment may include a computer program containing one or more sequences of machine-readable instructions describing a methods of producing targets on a substrate, measuring targets on a substrate and/or analyzing measurements to obtain information about a lithographic process. This computer program may be executed for example within unit PU in the apparatus of FIG. 3 and/or the control unit LACU of FIG. 2. There may also be provided a data storage medium (e.g., semiconductor memory, magnetic or optical disk) having such a computer program stored therein. Where an existing metrology apparatus, for example of the type shown in FIG. 3, is already in production and/or in use, the invention can be implemented by the provision of updated computer program products for causing a processor to perform the modified step S6 and so calculate overlay error with reduced sensitivity to feature asymmetry. The program may optionally be arranged to control the optical system, substrate support and the like to perform the steps S2-S5 for measurement of asymmetry on a suitable plurality of target structures.
Although specific reference may have been made above to the use of embodiments of the invention in the context of optical lithography, it will be appreciated that the invention may be used in other applications, for example imprint lithography, and where the context allows, is not limited to optical lithography. In imprint lithography a topography in a patterning device defines the pattern created on a substrate. The topography of the patterning device may be pressed into a layer of resist supplied to the substrate whereupon the resist is cured by applying electromagnetic radiation, heat, pressure or a combination thereof. The patterning device is moved out of the resist leaving a pattern in it after the resist is cured.
The terms “radiation” and “beam” used herein encompass all types of electromagnetic radiation, including ultraviolet (UV) radiation (e.g., having a wavelength of or about 365, 355, 248, 193, 157 or 126 nm) and extreme ultra-violet (EUV) radiation (e.g., having a wavelength in the range of 5-20 nm), as well as particle beams, such as ion beams or electron beams.
The term “lens”, where the context allows, may refer to any one or combination of various types of optical components, including refractive, reflective, magnetic, electromagnetic and electrostatic optical components.
The foregoing description of the specific embodiments will so fully reveal the general nature of the invention that others can, by applying knowledge within the skill of the art, readily modify and/or adapt for various applications such specific embodiments, without undue experimentation, without departing from the general concept of the present invention. Therefore, such adaptations and modifications are intended to be within the meaning and range of equivalents of the disclosed embodiments, based on the teaching and guidance presented herein. It is to be understood that the phraseology or terminology herein is for the purpose of description by example, and not of limitation, such that the terminology or phraseology of the present specification is to be interpreted by the skilled artisan in light of the teachings and guidance.
The breadth and scope of the present invention should not be limited by any of the above-described exemplary embodiments, but should be defined only in accordance with the following claims and their equivalents.
It is to be appreciated that the Detailed Description section, and not the Summary and Abstract sections, is intended to be used to interpret the claims. The Summary and Abstract sections may set forth one or more but not all exemplary embodiments of the present invention as contemplated by the inventor(s), and thus, are not intended to limit the present invention and the appended claims in any way.
The present invention has been described above with the aid of functional building blocks illustrating the implementation of specified functions and relationships thereof. The boundaries of these functional building blocks have been arbitrarily defined herein for the convenience of the description. Alternate boundaries can be defined so long as the specified functions and relationships thereof are appropriately performed.
The foregoing description of the specific embodiments will so fully reveal the general nature of the invention that others can, by applying knowledge within the skill of the art, readily modify and/or adapt for various applications such specific embodiments, without undue experimentation, without departing from the general concept of the present invention. Therefore, such adaptations and modifications are intended to be within the meaning and range of equivalents of the disclosed embodiments, based on the teaching and guidance presented herein. It is to be understood that the phraseology or terminology herein is for the purpose of description and not of limitation, such that the terminology or phraseology of the present specification is to be interpreted by the skilled artisan in light of the teachings and guidance.
The breadth and scope of the present invention should not be limited by any of the above-described exemplary embodiments, but should be defined only in accordance with the following claims and their equivalents.

## Claims

1. A method comprising:
forming a plurality of target structures distributed at a plurality of locations across a substrate and having overlaid periodic structures with a number of different overlay bias values distributed across said target structures, at least some of the target structures comprising a number of overlaid periodic structures that is fewer than said number of different overlay bias values;
illuminating the target structures;
detecting asymmetries in the radiation scattered by said target structures; and
determining a plurality of overlay parameters based on the detected asymmetries of three or more target structures distributed at different locations across the substrate and having three or more different respective values of overlay bias to determine said parameters using knowledge of the three different overlay bias values.

2. The method as claimed in claim 1 wherein the determining parameters based on the detected asymmetries includes an assumed non-linear relationship between overlay error and asymmetry.

3. A method as claimed in claim 1 wherein the determining parameters based on the detected asymmetries comprises using a multi-parameter model of overlay error across the substrate.

4. The method as claimed in claim 3 wherein said multi-parameter model of overlay error comprises parameters representing translation, magnification, rotation and substrate coordinates.

5. The method as claimed in claim 4 wherein said multi-parameter model of overlay error is an at least-six-parameter model.

6. The method as claimed in claim 2, wherein said assumed non-linear relationship is either a sinusoidal function or a combination of sinusoidal functions related harmonically to one another.

7. The method as claimed in claim 1 wherein the determining parameters based on the detected asymmetries is performed with the assumption that a contribution to overall asymmetry due to feature asymmetry within one or more of said periodic structures is constant for all values of overlay.

8. The method as claimed in claim 2 wherein the determining parameters based on the detected asymmetries is performed with the assumption that a contribution to overall asymmetry due to feature asymmetry within one or more of said periodic structures and one or more harmonic proportionality constant describing the assumed non-linear relationship are floating.

9. The method as claimed in claim 1 wherein the different overlay bias values span a range greater than 4%, 10%, 15%, or 20%, of a respective pitch of said periodic structures.

10. A method of manufacturing devices wherein a device pattern is applied to a series of substrates using a lithographic process, the method comprising:
inspecting at least one periodic structure formed as part of or beside said device pattern on at least one of said substrates, the inspecting comprising,
forming, via a lithographic process, a plurality of target structures distributed at a plurality of locations across a substrate and having overlaid periodic structures with a number of different overlay bias values distributed across said target structures, at least some of the target structures comprising a number of overlaid periodic structures that is fewer than said number of different overlay bias values;
illuminating the target structures;
detecting asymmetries in the radiation scattered by said target structures;
determining a plurality of overlay parameters based on the detected asymmetries of three or more target structures distributed at different locations across the substrate and having three or more different respective values of overlay bias to determine said parameters using knowledge of the three different overlay bias values, and
controlling the lithographic process for later substrates in accordance with the result of the method.