# Patent

## Title
Resist underlayer film composition and patterning process using the same

## Abstract

There is disclosed a resist underlayer film composition, wherein the composition contains a polymer obtained by condensation of, at least, one or more compounds represented by the following general formula (1-1) and/or (1-2), and one or more kinds of compounds and/or equivalent bodies thereof represented by the following general formula (2). There can be provided an underlayer film composition, especially for a trilayer resist process, that can form an underlayer film having reduced reflectance, namely, an underlayer film having optimum n-value and k-value, excellent filling-up properties, high pattern-antibending properties, and not causing line fall or wiggling after etching especially in a high aspect line that is thinner than 60 nm, and a patterning process using the same.

## Background
BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to a resist underlayer film composition effective as an antireflective film composition used for microprocessing in manufacturing of a semiconductor device and the like, and to a resist patterning process using the resist underlayer film composition suitable for the exposure to an ultra-violet ray, a KrF excimer laser beam (248 nm), an ArF excimer laser beam (193 nm), a F2 laser beam (157 nm), a Kr2 laser beam (146 nm), an Ar2 laser beam (126 nm), a soft X-ray (EUV, 13.5 nm), an electron beam (EB), an X-ray, and so on.
2. Description of the Related Art
In recent years, as LSI progresses toward a higher integration and a further acceleration in speed, miniaturization of a pattern rule is being requested. Under such circumstance, in a lithography using a photo-exposure that is used nowadays as a general technology, a technology to achieve a finer and more precise pattern processing to a light source used is being developed.
Optical exposure has been widely used using g-line (436 nm) or i-line (365 nm) of a mercury-vapor lamp as a light source for lithography when a resist pattern is formed. It has been considered that a method of using an exposure light with a shorter wavelength is effective as a means for achieving a further finer pattern. For this reason, KrF excimer laser with a shorter wavelength of 248 nm has been used as an exposure light source instead of i-line (365 nm), for mass-production process of a 64 M bit DRAM processing method. However, a light source with far shorter wavelength is needed for manufacture of DRAM with a packing density of 1 G or more which needs a still finer processing technique (a processing dimension of 0.13 μm or less), and lithography using ArF excimer laser (193 nm) has been particularly examined.
In a monolayer resist method used for a typical resist patterning process, it is well known that a pattern fall due to a surface tension of a developer occurs during the time of development if a ratio of a pattern height to a pattern line width (aspect ratio) becomes larger. Accordingly, it has been known that, to form a pattern with a high aspect ratio on a non-planar substrate, a multilayer resist method in which patterning is done by laminating films having different dry etching properties has an advantage; and thus, a bilayer resist method—in which a resist layer formed of a silicon-containing photo-sensitive polymer and an underlayer formed of an organic polymer mainly comprised of elements of carbon, hydrogen, and oxygen, that is for example, a novolak polymer are combined (Japanese Patent Laid-Open (kokai) No. H6-118651 and so on)—and a trilayer resist method—in which a resist layer formed of an organic photo-sensitive polymer used in a monolayer resist method, an intermediate layer formed of a silicon-containing polymer or of a silicon-containing CVD film, and an underlayer formed of an organic polymer are combined—have been developed (Japanese Patent No. 4355943 and so on).
In the underlayer film of the foregoing multilayer resist methods, patterning is done by using the silicon-containing composition layer formed directly thereabove as a hard mask by dry etching with an oxygen gas; and thus, an organic polymer mainly comprised of elements of carbon, hydrogen, and oxygen is used, and at the same time the underlayer film is required to have an etching resistance during the time of dry etching of a substrate to be processed, a film-forming property enabling to form a highly flat film on a substrate to be processed, and, depending on a use method, an antireflective function during the time of an exposure. For example, according to Japanese Patent No. 4355943, which discloses a technology relating to an underlayer film composition for a bilayer or a trilayer resist method, by using an underlayer film such as those disclosed in the document, not only an underlayer film pattern of a high precision can be formed but also a high etching resistance to the etching condition of a substrate to be processed can be secured.
Here, FIG. 2 shows fluctuations of reflectivity of a substrate while k value (extinction coefficient) of an intermediate resist layer is changed.
It follows from FIG. 2 that a sufficient antireflection effect to reduce reflectivity of a substrate to 1% or less can be obtained by making an intermediate resist layer to have a low k value of 0.2 or less and a proper thickness.
In FIG. 3 and FIG. 4, change of reflectance is shown when film thicknesses of the intermediate layer and the underlayer are changed in the cases of k-values of the underlayer film being 0.2 and 0.6. From comparison between FIG. 3 and FIG. 4, it can be seen that, in the case that k-value of the resist underlayer film is higher (in the case of 0.6 (FIG. 4)), reflectance can be reduced to 1% or lower by making the film thickness thereof thinner. In the case that k-value of the resist underlayer film is 0.2 (FIG. 3), in order to obtain reflectance of 1% in film thickness of 250 nm, film thickness of the resist intermediate film needs to be thicker. If film thickness of the resist intermediate film is increased, a load to the resist in the uppermost layer during the time of dry etching in processing of the resist intermediate film increases; and thus, this is not desirable. In FIG. 3 and FIG. 4, reflection in the case of a dry exposure with NA of an exposure equipment lens being 0.85 is shown; it can be seen that, independent of k-value in the underlayer film, reflectance of 1% or lower can be obtained by optimizing n-value (refractive index), k-value, and film thickness of the intermediate layer in the trilayer process.
However, because of an immersion lithography, NA of a projection lens is over 1.0, and angle of an incident light not only to a resist but also to an antireflective film under the resist is becoming shallower. An antireflective film suppresses the reflection not only by absorption due to the film itself but also by a negating action due to an intervention effect of a light. An intervention effect of a light is small in a slant light, and thus, reflection thereof is increased.
Among the films in the trilayer process, it is the intermediate layer that plays an antireflective role by using the intervention action of a light. The underlayer film is too thick for the intervention action so that there is no antireflective effect by a negating effect due to the intervention effect. Reflection from surface of the underlayer film needs to be suppressed; to achieve this, the k-value needs to be made less than 0.6 and the n-value near the value of the intermediate layer thereabove. If a transparency is too high due to a too small k-value, reflection from a substrate takes place; and thus, in the case of NA of an immersion exposure being 1.3, the k-value is optimum in the range between about 0.25 and about 0.48. Target n-values of both the intermediate layer and the underlayer are near the n-value of the resist, namely near 1.7.
As narrowing of a processed line width progresses, phenomena such as wiggling and bending of an underlayer film during etching of a substrate to be processed by using the underlayer film as a mask have been reported (Proc. of Symp. Dry. Process, (2005) p 11). It is generally well known that an amorphous carbon film formed by a CVD method (hereinafter CVD-C film) can very effectively prevent wiggling from occurring because amount of hydrogen atoms therein can be made extremely small.
However, in the case of a non-planar underlayment substrate to be processed, the difference in level needs to be made flat by an underlayer film. By making the underlayer film flat, variance in film thickness of an intermediate film and a photoresist formed thereabove can be suppressed so that a focus margin in lithography can be enlarged.
In the CVD-C film using a raw material such as a methane gas, an ethane gas, and an acetylene gas, it is difficult to fill up the difference in level thereof to flat. On the other hand, in the case that the underlayer film is formed by a spin coating method, there is a merit in that concavity and convexity of the substrate can be filled up.
As mentioned above, the CVD-C film is poor in filling-up of the difference in level, and in addition, introduction of a CVD equipment is sometimes difficult due to its price and occupied footprint area. If a wiggling problem could be solved by using an underlayer film composition capable of forming a film by a spin coating method, merits of simplification in process as well as in equipment thereof would be large.
Accordingly, an underlayer film composition—having optimum n-value, k-value, and filling-up properties as an antireflective film, and having excellent antibending properties without wiggling during etching—and a method for forming an underlayer film having such properties have been sought.
SUMMARY OF THE INVENTION
The present invention was made in view of the above circumstances, and has an object to provide:
an underlayer film composition, especially for a trilayer resist process, that can form an underlayer film having reduced reflectance, namely, an underlayer film having optimum n-value and k-value, excellent filling-up properties, high pattern-antibending properties, and not causing line fall or wiggling after etching especially in a high aspect line that is thinner than 60 nm, and

a patterning process using the same.

In order to solve the foregoing problems, the present invention provides a resist underlayer film composition, wherein the composition contains a polymer obtained by condensation of, at least,
one or more compounds represented by the following general formula (1-1) and/or (1-2), and
one or more kinds of compounds and/or equivalent bodies thereof represented by the following general formula (2):




wherein R1 to R8 independently represent a hydrogen atom, a halogen atom, a hydroxyl group, an isocyanato group, a glycidyloxy group, a carboxyl group, an amino group, an alkoxyl group having 1 to 30 carbon atoms, an alkoxy carbonyl group having 1 to 30 carbon atoms, an alkanoyloxy group having 1 to 30 carbon atoms, or an optionally-substituted saturated or unsaturated organic group having 1 to 30 carbon atoms, wherein two substituent groups arbitrarily selected from each of R1 to R4 or R5 to R8 may be bonded to form a cyclic substituent group within a molecule, and wherein X represents a monovalent organic group having 1 to 30 carbon atoms and containing one or more of a 5-membered or a 6-membered aliphatic cyclic structure that contains a double bond.
As described above, a resist underlayer film—using a resist underlayer film composition containing a polymer obtained by condensation of, at least, one or more compounds represented by the general formula (1-1) and/or (1-2), and one or more kinds of compounds and/or equivalent bodies thereof represented by the above general formula (2)—functions as an excellent antireflective film especially to an exposure light of a short wavelength (i.e., the resist underlayer film is highly transparent), and has not only optimum n-value and k-value but also excellent filling-up properties and excellent pattern-antibending properties during the time of substrate processing.
The resist underlayer film composition can contain a polymer obtained by condensation of
one or more compounds represented by the general formula (1-1) and/or (1-2),
one or more kinds of compounds and/or equivalent bodies thereof represented by the above general formula (2), and
one or more kinds of compounds and/or equivalent bodies thereof represented by the following general formula (3):

Y—CHO  (3)

wherein Y is different from X and represents a hydrogen atom or an optionally-substituted monovalent organic group having 1 to 30 carbon atoms.
If the resist underlayer film composition contains, as mentioned above, a polymer obtained by condensation of one or more compounds represented by the general formula (1-1) and/or (1-2), one or more kinds of compounds and/or equivalent bodies thereof represented by the general formula (2), and one or more kinds of compounds and/or equivalent bodies thereof represented by the general formula (3), the k-value and so on can be controlled easily so that intended n-value and k-value can be obtained.
The polymer is preferably represented by the following general formula (4-1) or (4-2):




wherein R1 to R8, X, and Y represent the same meanings as before, a, b, c, and d represent the ratio of each unit to the totality of repeating units with satisfying the relationships of 0≦d<c<a+b<1 and a+b+c+d=1, wherein * indicates a bonding position.
The resist underlayer film using the resist underlayer film composition containing the polymer as mentioned above has a further excellent pattern-antibending property during the time of substrate processing.
The resist underlayer film composition can contain any one or more of a crosslinking agent, an acid generator, and an organic solvent.
If the resist underlayer film composition contains further, as mentioned above, any one or more of an organic solvent, a crosslinking agent, and an acid generator, a crosslinking reaction in the resist underlayer film can be facilitated by baking and so on after application thereof onto a substrate and so on. Accordingly, there is no fear of intermixing between a resist underlayer film like this and a resist upper layer film, thereby reducing diffusion of a low-molecular weight component into the resist upper layer film.
The present invention provides a patterning process on a body to be processed, wherein, at least, a resist underlayer film is formed on a body to be processed by using the resist underlayer film composition of the present invention, a resist intermediate film is formed on the resist underlayer film by using a resist intermediate film composition containing a silicon atom, a resist upper layer film is formed on the resist intermediate film by using a resist upper layer film composition of a photoresist composition, a circuit pattern is formed in the resist upper layer film, the resist intermediate film is etched by using the resist upper layer film formed with the pattern as a mask, the resist underlayer film is etched by using the resist intermediate film formed with the pattern as a mask, and further, the body to be processed is etched by using the resist underlayer film formed with the pattern as a mask, whereby a pattern is formed on the body to be processed.
If patterning is done by a lithography using the resist underlayer film composition of the present invention as mentioned above, a pattern of a high precision can be formed on a substrate.
The present invention provides a patterning process on a body to be processed, wherein, at least, a resist underlayer film is formed on a body to be processed by using the resist underlayer film composition of the present invention, a resist intermediate film is formed on the resist underlayer film by using a resist intermediate film composition containing a silicon atom, an organic antireflective film (BARC) is formed on the resist intermediate film, a resist upper layer film is formed on the BARC by using a resist upper layer film composition of a photoresist composition thereby forming a four-layer resist film, a circuit pattern is formed in the resist upper layer film, the BARC and the resist intermediate film are etched by using the resist upperlayer film formed with the pattern as a mask, the resist underlayer film is etched by using the resist intermediate film formed with the pattern as a mask, and further, the body to be processed is etched by using the resist underlayer film formed with the pattern as a mask, whereby a pattern is formed on the body to be processed.
As mentioned above, in the present invention, BARC can be formed between the resist intermediate film and the resist upper layer film.
The present invention provides a patterning process on a body to be processed, wherein, at least, a resist underlayer film is formed on a body to be processed by using the resist underlayer film composition of the present invention, an intermediate film of an inorganic hard mask, selected from any of a silicon oxide film, a silicon nitride film, a silicon oxide nitride film, and an amorphous silicon film, is formed on the resist underlayer film, a resist upper layer film is formed on the intermediate film of the inorganic hard mask by using a resist upper layer film composition of a photoresist composition, a circuit pattern is formed in the resist upper layer film, the intermediate film of the inorganic hard mask is etched by using the resist upperlayer film formed with the pattern as a mask, the resist underlayer film is etched by using the intermediate film of the inorganic hard mask formed with the pattern as a mask, and further, the body to be processed is etched by using the resist underlayer film formed with the pattern as a mask, whereby a pattern is formed on the body to be processed.
As mentioned above, in the present invention, also in the case that an intermediate film of an inorganic hard mask is used, a pattern of a high precision can be formed on a substrate when patterning is done by a lithography using the resist underlayer film composition of the present invention.
The present invention provides a patterning process on a body to be processed, wherein, at least, a resist underlayer film is formed on a body to be processed by using the resist underlayer film composition of the present invention, an intermediate film of an inorganic hard mask, selected from any of a silicon oxide film, a silicon nitride film, a silicon oxide nitride film, and an amorphous silicon film, is formed on the resist underlayer film, an organic antireflective film (BARC) is formed on the intermediate film of the inorganic hard mask, a resist upper layer film is formed on the BARC by using a resist upper layer film composition of a photoresist composition thereby forming a four-layer resist film, a circuit pattern is formed in the resist upper layer film, the BARC and the intermediate film of the inorganic hard mask are etched by using the resist underlayer film formed with the pattern as a mask, the resist underlayer film is etched by using the intermediate film of the inorganic hard mask formed with the pattern as a mask, and further, the body to be processed is etched by using the resist underlayer film formed with the pattern as a mask, whereby a pattern is formed on the body to be processed.
If BARC is formed on an intermediate film of a hard mask as mentioned above, owing to two antireflective layers, reflection can be suppressed even in an immersion exposure with a high NA beyond 1.0. In addition, in so doing, a footing profile of a photoresist pattern on the intermediate film of a hard mask can be reduced.
In this case, the intermediate film of an inorganic hard mask can be formed by a CVD method or an ALD method.
If the intermediate film of an inorganic hard mask is formed by a CVD method or an ALD method as mentioned above, an etching resistance can be made high.
In addition, the patterning process of the resist upper layer film can be any of a photolithography method with the wavelength range between 10 nm or longer and 300 nm or shorter, a direct drawing method by an electron beam, and a nanoimprinting method, or a combination of them.
As mentioned above, patterning can be done on the resist upper layer film by any of a photolithography method with a wavelength range between 10 nm or more and 300 nm or less, a direct drawing method by an electron beam, and a nanoimprinting method, or by a combination of them.
A developing method in the patterning process can be executed with an alkaline development or a development by an organic solvent.
In so doing, an alkaline development or a development by an organic solvent can be used in the present invention.
The body to be processed having, on a substrate of a semiconductor device, a film of any of a metal film, a metal carbide film, a metal oxide film, a metal nitride film, and a metal oxide nitride film can be used.
In this case, the metal can be any of silicon, titanium, tungsten, hafnium, zirconium, chromium, germanium, aluminum, copper, and iron, or an alloy of these metals.
As mentioned above, in the present invention, the body to be processed that is formed on a substrate of a semiconductor device with any of the following films—a metal film, a metal carbide film, a metal oxide film, a metal nitride film, and a metal oxide nitride film—may be used, wherein the metal thereof includes, for example, any of silicon, titanium, tungsten, hafnium, zirconium, chromium, germanium, aluminum, copper, and iron, or an alloy of these metals.
As mentioned above, the resist underlayer film, formed by the resist underlayer film composition of the present invention, functions as an excellent antireflective film especially to the exposure to a light of a short wavelength (i.e., the resist underlayer film is highly transparent), and has not only optimum re-value and k-value but also excellent filling-up properties and excellent pattern-antibending properties during the time of substrate processing. In addition, if patterning is done by a lithography using the resist underlayer film composition of the present invention, a pattern of a high precision can be formed on a substrate.



BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1 is an explanatory view showing one embodiment of a patterning process (trilayer-resist process) according to the present invention.
FIG. 2 is a graph showing fluctuations of reflectivity of a substrate in a trilayer-resist process where the refractive index n value of a bottom resist layer is fixed at 1.5, the k value of the bottom resist layer is fixed at 0.6, the thickness of the bottom resist layer is fixed at 500 nm, the refractive index n value of an intermediate resist layer is fixed at 1.5, the k value of the intermediate resist layer is changed in the range of 0 to 0.4, and the thickness of the intermediate resist layer is changed in the range of 0 to 400 nm.
FIG. 3 is a graph showing fluctuations of reflectivity of a substrate in a trilayer-resist process where the refractive index n value of a bottom resist layer is fixed at 1.5, the k value of the bottom resist layer is fixed at 0.2, the refractive index n value of an intermediate resist layer is fixed at 1.5, the k value of the intermediate resist layer is fixed at 0.1, and the thicknesses of the bottom resist layer and the intermediate resist layer are changed respectively.
FIG. 4 is a graph showing fluctuations of reflectivity of a substrate in a trilayer-resist process where the refractive index n value of a bottom resist layer is fixed at 1.5, the k value of the bottom resist layer is fixed at 0.6, the refractive index n value of an intermediate resist layer is fixed at 1.5, the k value of the intermediate resist layer is fixed at 0.1, and the thicknesses of the bottom resist layer and the intermediate resist layer are changed respectively.



DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
Hereinafter, the present invention will be explained.
As mentioned above, it is generally well known that a CVD-C film can reduce amount of hydrogen atoms contained therein to an extremely low level so that it is very effective to prevent wiggling from occurring. However, there has been a problem that the CVD-C film formed by using a raw material such as a methane gas, an ethane gas, and an acetylene gas, is poor in filling-up of a difference in level thereof to flat, and in addition, introduction of a CVD equipment is sometimes difficult due to its price and occupied footprint area.
Accordingly, an underlayer film composition—having, as an antireflective film, optimum n-value, k-value, and filling-up properties, and excellent antibending properties without wiggling during etching—and a method for forming an underlayer film using the said composition have been sought.
Inventors of the present invention had already found that a co-condensation body formed from dicyclopentadiene and a naphthol derivative shown below not only had optimum n-value and k-value in photo-exposure to a light of a short wavelength such as 193 nm, but also was a material having an excellent etching resistance during etching of a substrate (Japanese Patent No. 3981825).




(Wherein R1 to R8 represent following meanings only in the above formula, regardless of other description in the present specification. Each R1 to R8 independently represents a hydrogen atom, a hydroxyl group, an optionally-substituted alkyl group having 1 to 6 carbon atoms, an optionally-substituted alkoxyl group having 1 to 6 carbon atoms, an optionally-substituted alkoxy carboxyl group having 2 to 6 carbon atoms, an optionally-substituted aryl group having 6 to 10 carbon atoms, a hydroxyalkyl group having 1 to 6 carbon atoms, an isocyanate group, or a glycidyl group. m and n represent a positive integer.)

The reaction to form this naphthol co-condensation body is an applied reaction shown below between a phenol and dicyclopentadiene to a naphthol system (here, * in the below reaction scheme indicates a bonding position).




A conventional film-curing reaction during formation of a resist underlayer film has been generally based on a reaction mechanism for curing by crosslinking among polymers via a crosslinking agent (indicated by • in the following scheme).




In order to further improve an antibending property while maintaining optimum n-value and k-value in exposure to a light of a short wavelength such as 193 nm, inventors of the present invention introduced a double bond capable of progressing a reaction according to the above reaction mechanism; and as a result, inventors of the present invention found that, as shown in a below equation, not only crosslinking among polymers by intervention of a crosslinking agent, but also direct crosslinking among polymers themselves without intervention of a crosslinking agent could be progressed thereby improving a crosslinking density of a film after baking and thus suppressing pattern deformation after etching, thereby completing the present invention.




(Wherein the figure shown by





represents a five- or a six-membered aliphatic ring structure having a double bond.)

Hereinafter, embodiments of the present invention will be explained, but the present invention is not limited by them.
The present invention is related to a resist underlayer film composition, wherein the composition contains a polymer obtained by condensation of, at least, one or more compounds represented by the following general formula (1-1) and/or (1-2), and one or more kinds of compounds and/or equivalent bodies thereof represented by the following general formula (2) (hereinafter, sometimes referred to as “aldehyde compound (2)”).




(Wherein (1-1) and (1-2), R1 to R8 independently represent a hydrogen atom, a halogen atom, a hydroxyl group, an isocyanato group, a glycidyloxy group, a carboxyl group, an amino group, an alkoxyl group having 1 to 30 carbon atoms, an alkoxy carbonyl group having 1 to 30 carbon atoms, an alkanoyloxy group having 1 to 30 carbon atoms, or an optionally-substituted saturated or unsaturated organic group having 1 to 30 carbon atoms. In addition, two substituent groups arbitrarily selected from each of R1 to R4 or R5 to R8 may be bonded to form a cyclic substituent group within a molecule. Wherein X represents a monovalent organic group having 1 to 30 carbon atoms and containing one or more of a 5-membered or a 6-membered aliphatic cyclic structure that contains a double bond.)

Herein, the term “organic group” means a group, which includes carbon, and which may additionally include hydrogen, as well as nitrogen, oxygen, sulfur, or the like (hereinafter represents the same meaning).
When a resist underlayer film composition containing a polymer like this is used, a film-curing reaction based on the above reaction mechanism can progress during formation of a resist underlayer film; and thus, not only crosslinking among polymers by intervention of a crosslinking agent but also direct crosslinking among polymers themselves without intervention of a crosslinking agent can progress, so that a crosslinking density of a film after baking can be improved and pattern deformation after etching can be suppressed. In addition, optimum n-value and k-value can be obtained in photo-exposure to a light of a short wavelength such as 193 nm. Further in addition, an excellent filling-up property can be obtained.
Herein, examples of the naphthalene (derivative) represented by the general formula (1-1) (hereinafter sometimes referred to as “naphthalene derivative (1-1)”) include naphthalene, 1-methylnaphthalene, 2-methylnaphthalene, 1,3-dimethylnaphthalene, 1,5-dimethylnaphthalene, 1,7-dimethylnaphthalene, 2,7-dimethylnaphthalene, 2-vinylnaphthalene, 2,6-divinylnaphthalene, acenaphthene, acenaphthylene, anthracene, 1-methoxynaphthalene, 2-methoxynaphthalene, 1,4-dimethoxynaphthalene, 2,7-dimethoxynaphthalene, 1-naphthol, 2-naphthol, 2-methyl-1-naphthol, 4-methoxy-1-naphthol, 7-methoxy-2-naphthol, 1,2-dihydroxynaphthalene, 1,3-dihydroxynaphthalene, 2,3-dihydroxynaphthalene, 1,4-dihydroxynaphthalene, 1,5-dihydroxynaphthalene, 1,6-dihydroxynaphthalene, 2,6-dihydroxynaphthalene, 1,7-dihydroxynaphthalene, 2,7-dihydroxynaphthalene, 1,8-dihydroxynaphthalene, 5-amino-1-naphthol, 2-methoxycarbonyl-1-naphthol, 1-(4-hydroxyphenyl) naphthalene, 6-(4-hydroxyphenyl)-2-naphthol, 6-(cyclohexyl)-2-naphthol, 1,1′-bi-2,2′-naphthol, 6,6′-bi-2,2′-naphthol, 9,9-bis(6-hydroxy-2-naphthyl)fluorene, 6-hydroxy-2-vinylnaphthalene, 1-hydroxymethylnaphthalene, 2-hydroxymethylnaphthalene, and the like.
Examples of the benzene (derivative) represented by the general formula (1-2) (hereinafter sometimes referred to as “benzene derivative (1-2)”) include toluene, o-xylene, m-xylene, p-xylene, cumene, indane, indene, mesitylene, biphenyl, fluorene, phenol, anisole, o-cresol, m-cresol, p-cresol, 2,3-dimethylphenol, 2,5-dimethylphenol, 3,4-dimethylphenol, 3,5-dimethylphenol, 2,4-dimethylphenol, 2,6-dimethylphenol, 2,3,5-trimethylphenol, 3,4,5-trimethylphenol, 2-t-butylphenol, 3-t-butylphenol, 4-t-butylphenol, resorcinol, 2-methylresorcinol, 4-methylresorcinol, 5-methylresorcinol, catechol, 4-t-butylcatechol, 2-methoxyphenol, 3-methoxyphenol, 2-propylphenol, 3-propylphenol, 4-propylphenol, 2-isopropylphenol, 3-isopropylphenol, 4-isopropylphenol, 2-methoxy-5-methylphenol, 2-t-butyl-5-methylphenol, 4-phenylphenol, tritylphenol, pyrogallol, thymol, phenylglycidylether 4-fluorophenol, 3,4-difluorophenol, 4-trifluoromethlyphenol, 4-clorophenol, 9,9-bis(4-hydroxyphenyl)fluorene, styrene, 4-t-butoxystyrene, 4-acetoxystyrene, 4-methoxystyrene, divinylbenzene, benzylalcohol, and the like.
Each of the compounds represented by the general formulae (1-1) and (1-2) may be used singly, or in a combination of two or more kinds thereof in order to control n-value, k-value, and an etching resistance.
Examples of aldehyde compound represented by the general formula (2) containing one or more of a 5-membered or a 6-membered aliphatic cyclic structure that contains a double bond include the following formulae.





































Further, an equivalent body of the aldehyde compound shown here may also be used. Examples of the equivalent body of the general formula (2) include a compound having the following general formulae.




(X is defined similarly to the foregoing X, and each R′ represents an identical or a different monovalent hydrocarbon group having 1 to 10 carbon atoms.)





(X is defined similarly to the foregoing X, and R′′ represents a divalent hydrocarbon group having 1 to 10 carbon atoms.)

<In the Case that a Hydrogen Atom is Bonded to the α-Carbon Atom of the Formyl Group.>





(X′ represents an organic group having one less hydrogen atom from the foregoing X, and R′ represents a monovalent hydrocarbon group having 1 to 10 carbon atoms.)

Specific examples of the equivalent body of (2A) are represented by the following formulae, and similarly to the case of other aldehyde compounds, an equivalent body can be used.




Specific examples of the equivalent body of (2B) are represented by the following formulae, and similarly to the case of other aldehyde compounds, an equivalent body can be used.




Specific examples of the equivalent body of (20) are represented by the following formulae, and similarly to the case of other aldehyde compounds, an equivalent body can be used.




Ratio of an aldehyde compound (2) to a naphthalene derivative (1-1) and a benzene derivative (1-2) is preferably 0.01 to 5 moles, or more preferably 0.1 to 2 moles, relative to 1 mole of the totality of (1-1) and (1-2).
The resist underlayer film composition of the present invention may contain a polymer obtained by condensation of
one or more compounds represented by the general formula (1-1) and/or (1-2),
one or more kinds of compounds and/or equivalent bodies thereof represented by the general formula (2), and
one or more kinds of compounds and/or equivalent bodies thereof represented by the following general formula (3) (hereinafter sometimes referred to as “aldehyde compound (3)”).

Y—CHO  (3)

(Wherein Y is different from X and represents a hydrogen atom or an optionally-substituted monovalent organic group having 1 to 30 carbon atoms.)
Examples of the aldehyde compound represented by the general formula (3) include formaldehyde, trioxane, paraformaldehyde, acetaldehyde, propylaldehyde, adamantanecarboaldehyde, benzaldehyde, phenylacetaldehyde, α-phenylpropylaldehyde, β-phenylpropylaldehyde, o-chlorobenzaldehyde, m-chlorobenzaldehyde, p-chlorobenzaldehyde, o-nitrobenzaldehyde, m-nitrobenzaldehyde, p-nitrobenzaldehyde, o-methylbenzaldehyde, m-methylbenzaldehyde, p-methylbenzaldehyde, p-ethylbenzaldehyde, p-n-butylbenzaldehyde, 1-naphthylaldehyde, 2-naphthylaldehyde, anthracenecarboaldehyde, pyrenecarboaldehyde, furfural, methylal, and the like.
In addition, similarly to the case of an aldehyde compound represented by the general formula (2), an aldehyde equivalent body can be used. Specific examples of the equivalent body of the general formula (3) include a compound having the following general formulae.




(Y is defined similarly to the foregoing Y, and each R′ represents an identical or a different monovalent hydrocarbon group having 1 to 10 carbon atoms.)





(Y is defined similarly to the foregoing Y, and R′′ represents a divalent hydrocarbon group having 1 to 10 carbon atoms.)

<In the Case that a Hydrogen Atom is Bonded to the α-Carbon Atom of the Formyl Group.>





(Y′ represents an organic group having one less hydrogen atom from the foregoing Y, and R′ represents a monovalent hydrocarbon group having 1 to 10 carbon atoms.)

Examples of the polymer as described above, which is contained in the resist underlayer film composition of the present invention, include a compound having the following general formula (4-1) or (4-2).




(Wherein R1 to R8, X, and Y represent the same meanings as before, and a, b, c, and d represent the ratio of each unit to the totality of repeating units with satisfying the relationships of 0≦d<c<a+b<1 and a+b+c+d=1. Here, * indicates a bonding position.)

Ratio of an aldehyde compound (2) and an aldehyde compound (3) to a naphthalene derivative (1-1) and a benzene derivative (1-2) is preferably 0.01 to 5 moles, and (3)<(2), or more preferably 0.05 to 2 moles, relative to 1 mole of the totality of (1-1) and (1-2).
Ratio to the totality of repeating units is preferably 0.1<a+b<1, or more preferably 0.3<a+b<0.95.
Polymers represented by the general formulae (4-1) and (4-2) (hereinafter sometimes referred to as “polymer (4-1)” and “polymer (4-2)”) can be produced by a condensation reaction (for example, a condensation by dehydration) of the corresponding compounds, usually by using an acid or a base as a catalyst in a solvent or without solvent at room temperature or with cooling or heating as appropriate.
Examples of the solvent to be used include alcohols such as methanol, ethanol, isopropyl alcohol, butanol, ethylene glycol, propylene glycol, diethylene glycol, glycerol, methyl cellosolve, ethyl cellosolve, butyl cellosolve, and propylene glycol monomethyl ether; ethers such as diethyl ether, dibutyl ether, diethylene glycol diethyl ether, diethylene glycol dimethyl ether, tetrahydrofurane, and 1,4-dioxane; chlorinated solvents such as methylene chloride, chloroform, dichloroethane, and trichloroethylene; hydrocarbons such as hexane, heptane, benzene, toluene, xylene, and cumene; nitriles such as acetonitrile; ketones such as acetone, ethyl methyl ketone, and isobutyl methyl ketone; esters such as ethyl acetate, n-butyl acetate, and propylene glycol methyl ether acetate; lactones such as γ-butyrolactone; and non-protic polar solvents such as dimethyl sulfoxide, N,N-dimethyl formamide, and hexamethyl phosphoric triamide. These may be used singly or as a mixture of two or more of them. These solvents may be used in the range between 0 and 2000 parts by mass relative to 100 parts by mass of raw materials of the reaction.
Examples of the acid catalyst to be used include inorganic acids such as hydrochloric acid, hydrobromic acid, sulfuric acid, nitric acid, phosphoric acid, and heteropolyacid; organic acids such as oxalic acid, trifluoroacetic acid, methane sulfonic acid, benzene sulfonic acid, p-toluene sulfonic acid, and trifluoromethane sulfonic acid; and Lewis acids such as aluminum trichloride, aluminum ethoxide, aluminum isopropoxide, boron trifluoride, boron trichloride, boron tribromide, tin tetrachloride, tin tetrabromide, dibutyltin dichloride, dibutyltin dimethoxide, dibutyltin oxide, titanium tetrachloride, titanium tetrabromide, titanium (IV) methoxide, titanium (IV) ethoxide, titanium (IV) isopropoxide, and titanium (IV) oxide. Examples of the base catalyst to be used include an inorganic base such as sodium hydroxide, potassium hydroxide, barium hydroxide, sodium carbonate, sodium bicarbonate, potassium carbonate, lithium hydride, sodium hydride, potassium hydride, and calcium hydride; an alkyl metal such as methyl lithium, n-butyl lithium, methyl magnesium chloride, and ethyl magnesium bromide; an alkoxide such as sodium methoxide, sodium ethoxide, and potassium t-butoxide; and an organic base such as triethyl amine, diisopropyl ethyl amine, N,N-dimethylaniline, pyridine, and 4-dimethylamino pyridine. The amount thereof relative to raw materials is 0.001 to 100% by mass, or preferably 0.005 to 50% by mass. Temperature of the reaction is preferably between −50° C. and about boiling point of a solvent, or more preferably between room temperature to 100° C.
As a method for carrying out the condensation reaction, there are a method in which a naphthalene derivative (1-1), a benzene derivative (1-2), aldehyde compounds (2) and (3), and a catalyst are charged all at once and a method in which a naphthalene derivative (1-1), a benzene derivative (1-2), and aldehyde compounds (2) and (3) are gradually added in the presence of a catalyst.
After the condensation reaction, in order to remove a unreacted raw material, catalyst, and so on that are present in the reaction system, a method in which temperature of the reaction vessel is increased to 130 to 230° C. at about 1 to about 50 mmHg to remove volatile components, a method in which a polymer is fractionated by adding an appropriate solvent or water, a method in which a polymer is dissolved into a good solvent then reprecipitated into a poor solvent, and so on, can be used by selecting them depending on properties of reaction products obtained.
Polystyrene-equivalent molecular weight of a polymer represented by the general formula (4-1) or (4-2) thus obtained is preferably 500 to 100,000, or in particular 1,000 to 20,000, as the weight-average molecular weight (Mw). The molecular-weight distribution is preferably 1.2 to 8, while a narrow molecular weight distribution, obtained by cutting a monomer component, an oligomer component, or a low-molecular weight body of a molecular weight (Mw) of 1,000 or less, can bring about a higher crosslinking efficiency and prevent pollution around a baking cup from occurring due to suppression of a volatile component during baking.
In addition, into the compound represented by the general formula (4-1) or (4-2) may be introduced a condensed aromatic or an alicyclic substituent.
Specific examples of the introducible substituent group include the following.










Among them, for an exposure to the light of 248 nm, a polycyclic aromatic group, such as an anthracenemethyl group and a pyrenemethyl group, is most preferably used. To increase transparency at 193 nm, a group having an alicyclic structure or a naphthalene structure is preferably used. On the other hand, a benzene ring has a window to increase transparency at 157 nm, and thus, absorbance needs to be increased by shifting an absorption wavelength. A furane ring has an absorption at a shorter wavelength than a benzene ring with the absorption at 157 nm being somewhat increased, though its effect is small. A naphthalene ring, an anthracene ring, and a pyrene ring increase the absorption due to shifting of the absorption wavelength toward a longer wavelength, and these aromatic rings have an effect to increase an etching resistance; and thus, they are preferably used.
A substituent group may be introduced by a method in which an alcohol having bonding site of a hydroxyl group in the substituent group is introduced into a polymer at an ortho-position or a para-position relative to a hydroxyl group or an alkyl group thereof in the presence of an acid catalyst in accordance with a reaction mechanism of an aromatic electrophilic substitution. Examples of the acid catalyst include hydrochloric acid, nitric acid, sulfuric acid, formic acid, oxalic acid, acetic acid, methane sulfonic acid, n-butane sulfonic acid, camphor sulfonic acid, tosyl acid, and trifluoromethane sulfonic acid. Amount of the acid catalyst is 0.001 to 20 parts by mass, relative to 100 parts by mass of a polymer before the reaction. Amount of the introduced substituent group is in the range between 0 and 0.8 mole relative to 1 mole of a monomer unit in the polymer.
In addition, blending with another polymer may be allowed. Examples of the blending polymer include a polymer, obtained from a compound represented by the general formula (1-1) or (1-2) as the raw material while having a different composition, and a heretofore known novolak resin. Blending a polymer like this affords a role to improve coating properties by a spin coating method and filling-up properties of a non-planar substrate. In addition, a material having a higher carbon density and a higher etching resistance can be chosen.
Examples of the heretofore known novolak resin usable for blending include condensation-dehydration compounds obtained by condensation of formaldehyde and phenol, o-cresol, m-cresol, p-cresol, 2,3-dimethylphenol, 2,5-dimethylphenol, 3,4-dimethylphenol, 3,5-dimethylphenol, 2,4-dimethylphenol, 2,6-dimethylphenol, 2,3,5-trimethylphenol, 3,4,5-trimethylphenol, 2-t-butylphenol, 3-t-butylphenol, 4-t-butylphenol, 2-phenylphenol, 3-phenylphenol, 4-phenylphenol, 3,5-diphenylphenol, 2-naphthylphenol, 3-naphthylphenol, 4-naphthylphenol, 4-tritylphenol, resorcinol, 2-methylresorcinol, 4-methylresorcinol, 5-methylresorcinol, catechol, 4-t-butylcatechol, 2-methoxyphenol, 3-methoxyphenol, 2-propylphenol, 3-propylphenol, 4-propylphenol, 2-isopropylphenol, 3-isopropylphenol, 4-isopropylphenol, 2-methoxy-5-methylphenol, 2-t-butyl-5-methylphenol, pyrogallol, thymol, isothymol, 4,4′-(9H-fluorene-9-ylidene)bisphenol, 2,2′-dimethyl-4,4′-(9H-fluorene-9-ylidene)bisphenol, 2,2′-diallyl-4,4′-(9H-fluorene-9-ylidene)bisphenol, 2,2′-difluoro-4,4′-(9H-fluorene-9-ylidene)bisphenol, 2,2′-diphenyl-4,4′-(9H-fluorene-9-ylidene)bisphenol, 2,2′-dimethoxy-4,4′-(9H-fluorene-9-ylidene)bisphenol, 2,3,2′3′-tetrahydro-(1,1′)-spirobiindene-6,6′-diol, 3,3,3′,3′-tetramethyl-2,3,2′3′-tetrahydro-(1,1′)-spirobiindene-6,6′-diol, 3,3,3′,3′,4,4′-hexamethyl-2,3,2′3′-tetrahydro-(1,1′)-spirobiindene-6,6′-diol, 2,3,2′3′-tetrahydro-(1,1′)-spirobiindene-5,5′-diol, 5,5′-dimethyl-3,3,3′,3′-tetramethyl-2,3,2′3′-tetrahydro-(1,1′)-spirobiindene-6,6′-diol, 1-naphthol, 2-naphthol, 2-methyl-1-naphthol, 4-methoxy-1-naphthol, 7-methoxy-2-naphthol, dihydroxynaphthalene such as 1,5-dihydroxynaphthalene, 1,7-dihydroxynaphthalene, and 2,6-dihydroxynaphthalene, 3-hydroxy-naphthalene-2-methyl carboxylic acid, hydroxyindene, hydroxyanthracene, bisphenol, or trisphenol; polystyrene; polyvinylnaphthalene; polyvinylanthracene; polyvinylcarbazole; polyindene; polyacenaphthylene; polynorbornene; polycyclodecene; polytetracyclododecene; polynortricyclene; poly(meth)acrylate; and copolymer thereof.
Moreover, other heretofore known resins such as nortricyclene copolymer, hydrogenated-naphtholnovolak resin, naphtholdicyclopentadiene copolymer, phenoldicyclopentadiene copolymer, fluorenebilphenolnovolak resin, acenaphthylene copolymer, indene copolymer, fullerene having a phenol group, bisphenol compound and novolak resin thereof, dibisphenol compound and novolak resin thereof, novolak resin of adamantane phenol compound, hydroxyvinylnaphthalene copolymer, bisnaphthol compound and novolak resin thereof, ROMP, resin compounds such as tricyclopentadiene copolymer, and resin compounds of fullerenes can be blended.
Amount of the blending compound or amount of the blending polymer is 0 to 1,000 parts by mass, or preferably 0 to 500 parts by mass, relative to 100 parts by mass of a compound represented by the general formula (4-1) or (4-2).
The resist underlayer film composition of the present invention may contain a crosslinking agent with a purpose to facilitate a crosslinking reaction inside the resist underlayer film by baking and so on after application thereof to a substrate and so on, so that a chance of intermixing of the resist underlayer film with the resist upper layer film may be reduced thereby reducing diffusion of a low-molecular weight component to the resist upper layer film.
A crosslinking agent usable in the present invention including those materials described in paragraphs (0055) to (0060) of Japanese Patent Laid-Open Application No. 2007-199653 may be added.
In the present invention, an acid generator to further facilitate a thermal crosslinking reaction may be added. An acid generator generates an acid by thermal decomposition or by light irradiation; and any of them may be added. Specifically, those materials described in paragraphs (0061) to (0085) of Japanese Patent Laid-Open Application No. 2007-199653 may be added.
In addition, a basic compound to improve storage stability may be added into the resist underlayer film composition used in patterning process of the present invention, as will be described later. The basic compound plays a role of the quencher to an acid that is generated faintly from an acid generator, whereby a crosslinking reaction by the acid generated therefrom may be prevented from progressing.
Basic compounds specifically described in paragraphs (0086) to (0090) of Japanese Patent Laid-Open Application No. 2007-199653 may be added.
In addition, in preparation of the resist underlayer film composition of the present invention, an organic solvent may be used.
The organic solvent usable in the resist underlayer film composition for patterning process of the present invention is not particularly limited, provided that the organic solvent can dissolve the base polymer, the acid generator, the crosslinking agent, and other additives, as described before. Specifically, those solvents described in paragraphs (0091) to (0092) of Japanese Patent Laid-Open Application No. 2007-199653 may be added.
Still in addition, in the underlayer film-forming composition used in patterning process of the present invention, a surfactant may be added to improve applicability in spin coating. Surfactants described in paragraphs (0165) to (0166) of Japanese Patent Laid-Open Application No. 2008-111103 may be used.
Specific example of the patterning process of the present invention using the resist underlayer film composition prepared as mentioned above includes the following.
The present invention provides a patterning process on a body to be processed, wherein, at least, a resist underlayer film is formed on a body to be processed by using the resist underlayer film composition of the present invention, a resist intermediate film is formed on the resist underlayer film by using a resist intermediate film composition containing a silicon atom, a resist upper layer film is formed on the resist intermediate film by using a resist upper layer film composition of a photoresist composition, a circuit pattern is formed in the resist upper layer film, the resist intermediate film is etched by using the resist upper layer film formed with the pattern as a mask, the resist underlayer film is etched by using the resist intermediate film formed with the pattern as a mask, and further, the body to be processed is etched by using the resist underlayer film formed with the pattern as a mask, whereby a pattern is formed on the body to be processed.
In this case, as to the resist intermediate film, an intermediate film of an inorganic hard mask, selected from any of a silicon oxide film, a silicon nitride film, a silicon oxide nitride film (SiON film), and an amorphous silicon film, may be formed.
In the case that the intermediate film of an inorganic hard mask is formed on the resist underlayer film, a silicon oxide film, a silicon nitride film, a silicon oxide nitride film (SiON film), or an amorphous silicon film is formed by a CVD method, an ALD method, and the like. A method for forming a silicon nitride film is described in Japanese Patent Laid-Open Publication No. 2002-334869, International Patent Laid-Open Publication No. 2004/066377, and so on. Thickness of the inorganic hard mask is 5 to 200 nm, or preferably 10 to 100 nm; among the foregoing films, a SiON film, which is highly effective as an antireflective film, is most preferably used. Because temperature of a substrate during the time of forming a SiON film is 300 to 500° C., the underlayer film needs to be endurable the temperature of 300 to 500° C. The resist underlayer film composition of the present invention has a high heat resistance so that it is endurable the high temperature of 300 to 500° C.; and thus, a combination of the inorganic hard mask formed by a CVD method or an ALD method with the resist underlayer film formed by a spin coating method may be possible.
A photoresist film may be formed as the resist upper layer film on the resist intermediate film or the intermediate film of an inorganic hard mask as mentioned above; but also an organic antireflective film (BARC) may be formed on the resist intermediate film or on the intermediate film of an inorganic hard mask by spin coating, followed by formation of a photoresist film thereonto.
Especially in the case that the intermediate film of an inorganic hard mask such as a SiON film is used, reflection can be suppressed even in an immersion exposure with a high NA of beyond 1.0 by virtue of a bi layer of the SiON film and BARC. Another merit of forming BARC resides in that a footing profile of the photoresist pattern immediately above the SiON film can be suppressed.
In a process of forming the resist underlayer film in the patterning process of the present invention, similarly to the photoresist, the foregoing resist underlayer film composition is applied onto a body to be processed by a spin coating method and the like. By using a spin coating method and the like, an excellent filling-up property can be obtained. After spin coating, a solvent is evaporated, and then baking is carried out to prevent mixing with the resist upper layer film and the resist intermediate film from occurring and to facilitate a crosslinking reaction. The baking is carried out in the temperature range between above 100° C. and 600° C. or lower and with the time in the range between 10 and 600 seconds, or preferably in the range between 10 and 300 seconds. The baking temperature is preferably between 150° C. or higher and 500° C. or lower, or more preferably between 180° C. or higher and 400° C. or lower. In view of effects on device damage and wafer deformation, upper limit of the heatable temperature in a lithography wafer process is 600° C. or lower, or preferably 500° C. or lower.
Atmosphere during the time of baking may be air; but it is preferable that an inert gas such as N2, Ar, and He be charged to reduce oxygen so that oxidation of the resist underlayer film may be prevented from occurring. To prevent oxidation of the underlayer film from occurring, oxygen concentration needs to be controlled, preferably at 1,000 ppm or lower, or more preferably 100 ppm or lower. Prevention of oxidation of the resist underlayer film during baking from occurring is desirable because increase in absorption and decrease in etching resistance can be avoided.
Meanwhile, thickness of the resist underlayer film can be arbitrarily selected, though the range thereof is preferably 30 to 20,000 nm, or in particular 50 to 15,000. In the case of the trilayer process, after forming the resist underlayer film, a resist intermediate film containing a silicon atom may be formed thereunto, followed by formation of a resist upper, layer film not containing a silicon atom (monolayer resist film).
As to the resist intermediate film containing a silicon atom in the trilayer process as mentioned above, an intermediate film based on polysiloxane is used preferably. When this resist intermediate film containing a silicon atom is made to have an effect of an antireflective film, reflection can be suppressed. Specifically, a material including polysiloxanes, described in Japanese Patent Laid-Open Publication No. 2004-310019, Japanese Patent Laid-Open Publication No. 2009-126940 and so on, can be mentioned.
When a resist underlayer film using a material containing many aromatic groups and having a high etching resistance to a substrate is used, especially for exposure to the light of 193 nm wavelength, the k-value and the substrate reflectance become high; but the substrate reflectance can be reduced to 0.5% or less by suppressing reflection by the resist intermediate film.
The intermediate film of an inorganic hard mask as mentioned above can be formed by a CVD method or an ALD method.
The resist upper layer film in the trilayer resist film may be any of a positive-type and a negative-type, wherein the same composition as a generally used photoresist composition may be used. In the case that the resist upper layer film is formed by the foregoing photoresist composition, a spin coating method is preferably used, similarly to the case of forming the resist underlayer film. After spin coating of the photoresist composition, prebaking is carried out, preferably in the temperature range between 60 and 180° C. for time between 10 and 300 seconds. Thereafter, exposure, post-exposure bake (PEB), and development are carried out according to respective conventional methods to obtain a resist pattern. Meanwhile, thickness of the resist upper layer film is not particularly limited, though the thickness between 30 and 500 nm, in particular between 50 and 400 nm, is preferable.
As to the foregoing patterning process of the resist upper layer film, patterning may be done by a method such as a photolithography method with the wavelength range between 10 nm or longer and 300 nm or shorter—specifically excimer laser beams of 248 nm, 193 nm, and 157 nm, and a soft X-ray of 20 nm or shorter—, a direct drawing method by an electron beam, and a nanoimprinting method, or a combination of them.
Specific examples of the development method in the patterning process as mentioned above include an alkaline development and a development by an organic solvent.
Then, etching is carried out by using the obtained resist pattern as a mask. Etching of the resist intermediate film in the trilayer process, especially etching of the inorganic hard mask is carried out by using a CF gas and a resist pattern as a mask. Then, etching of the resist underlayer film is carried out by using an oxygen gas or a hydrogen gas and a resist intermediate film pattern, especially an inorganic hard mask pattern, as a mask.
Subsequent etching of the body to be processed may be carried out also by a conventional method; for example, etching is carried out by using a gas mainly comprised of a CF gas in the case of the substrate being SiO2, SiN, or a silica-type low-dielectric insulating film, while, in the case of p-Si, Al, or W, etching is carried out by a gas mainly comprised of a chlorine-type gas and a bromine-type gas. In the case that processing of the substrate is carried out by etching with a CF gas, the intermediate layer containing a silicon atom in the trilayer process is removed at the same time as processing of the substrate. In the case that etching of the substrate is carried out by a chlorine-type gas or a bromine-type gas, removal of the intermediate layer containing a silicon atom needs to be carried out separately by dry etching with a CF gas after processing of the substrate.
The resist underlayer film formed by the pattering process of the present invention for forming the resist underlayer film has a characteristic of excellent etching resistance to these bodies to be processed.
Meanwhile, as to the body to be processed, the one such as those having, on a substrate of a semiconductor device (substrate), any of the following metal films (hereinafter, “layer to be processed”)—a metal film, a metal carbide film, a metal oxide film, a metal nitride film, and a metal oxide nitride film—may be used.
The substrate is not limited and may be Si, an amorphous silicon (α-Si), p-Si, SiO2, SiN, SiON, W, TiN, Al, or the like. The substrate may be a material different from the layer to be processed may be used.
The layer to be processed may be made of Si, SiO2, SiON, SiN, p-Si, α-Si, W, W—Si, Al, Cu, Al—Si, or the like; various low dielectric constant films, or etching stopper films. Typically, the layer may be formed at a thickness of 50 to 10,000 nm, in particular at a thickness of 100 to 5,000 nm.
One embodiment of the patterning process of the present invention (trilayer process) will be specifically shown as following with referring to FIG. 1.
In the case of the trilayer process, as shown in FIG. 1 (A), after the resist underlayer film 3 is formed by the present invention on the film to be processed 2 that is laminated on the substrate 1, the resist intermediate film 4 is formed, and then, the resist upper layer film 5 is formed thereonto.
Then, as shown in FIG. 1 (B), the intended part 6 of the resist upper layer film is exposed, which is then followed by PEB and development to form the resist pattern 5a (FIG. 1 (C)). By using the resist pattern 5a thus obtained as a mask, the resist intermediate film 4 is processed by etching with a CF gas to form the resist intermediate film pattern 4a (FIG. 1 (D)). After removal of the resist pattern 5a, by using the resist intermediate film pattern 4a thus obtained as a mask, the resist underlayer film 3 is etched by an oxygen plasma method to form the resist underlayer film pattern 3a (FIG. 1 (E)). Further, after removal of the resist intermediate film pattern 4a, the film to be processed 2 is processed by etching using the resist underlayer film pattern 3a as a mask to form the pattern 2a on the substrate (FIG. 1 (F)).
Meanwhile, in the case that the intermediate film of an inorganic hard mask is used, the resist intermediate film 4 shows the intermediate film of an inorganic hard mask, and the resist intermediate film pattern 4a is the intermediate film pattern of an inorganic hard mask 4a.
In the case that BARC is formed, BARC is formed between the resist intermediate film (or intermediate film of an inorganic hard mask) 4 and the resist upper layer film 5. Etching of BARC may be carried out continuously in advance of etching of the resist intermediate film (or intermediate film of an inorganic hard mask) 4, or etching of the resist intermediate film (or intermediate film of an inorganic hard mask) 4 may be carried out by changing an equipment and the like after only BARC is etched.
EXAMPLES
Hereafter the present invention will be explained in detail with reference to Synthesis Examples, Comparative Synthesis Examples, Examples and Comparative Examples. However, the present invention is not limited thereto.
In addition, as for measurement of molecular weight, mass average molecular weight (Mw) and number average molecular weight (Mn) relative to polystyrene standards were determined by gel permeation chromatography (GPC), and molecular-weight distribution (Mw/Mn) was determined.
Synthesis Example 1
Into a 500-mL flask was taken 72 g of 1-naphthol (0.5 mole), 40 g of norbornene carboaldehyde (0.33 mole), and 200 g of methyl cellosolve; and then, into the resulting mixture was added 20 g of a methyl cellosolve solution of 20% p-toluenesulfonic acid with stirring at 65° C. After stirring was continued at the same temperature for 2 hours, the content therein was cooled to room temperature, transferred to a separation funnel containing 800 mL of ethyl acetate, and washed with 500 mL of deionized water; and then washing water was discarded. This washing and separation procedures were repeated, whereby the reaction catalyst and metal impurities were removed. After the obtained solution was concentrated under reduced pressure, 500 mL of THF was added to the residue, and then a polymer was reprecipitated by 4,000 mL of hexane. The precipitated polymer was collected by filtration and then dried under reduced pressure to obtain Polymer 1.




The weight-average molecular weight (Mw) (relative to polystyrene standard) and the molecular-weight distribution (Mw/Mn) of Polymer 1 were obtained by gel permeation chromatography (GPC). In addition, a mole ratio of naphthol (a) and norbornene (b) in Polymer 1 was obtained by 1H-NMR. The results are shown below.
Mole ratio a:b=0.60:0.40
Weight-average molecular weight (Mw)=4,300
Molecular-weight distribution (Mw/Mn)=6.50
Synthesis Examples 2 to 12
Polymers 2 to 12 shown in Table 2 were obtained by using the materials shown in Table 1 under the same condition as Synthesis Example 1.












TABLE 1





Synthesis
Compond (1-1)
Reaction
Reaction




Example
and/or (1-2)
solvent
catalyst
Compound (2)
Compound (3)







 1




methyl cellosolve 200 g
A 20 g







 


 2




methyl cellosolve 200 g
A 20 g







 


 3




methyl cellosolve 200 g
A 20 g




paraformaldehyde 5 g


 


 4




methyl cellosolve 200 g
A 20 g







 


 5




methoxypropanol 200 g
B 20 g










 


 6




methyl cellosolve 200 g
A 20 g







 


 7




methoxypropanol 200 g
B 20 g










 


 8




methoxypropanol 200 g
B 20 g







 


 9



   



methoxypropanol 200 g
B 20 g







 











(Comparative






Synthesis Example)
















10




methyl cellosolve 200 g
A 20 g







 


11




methyl cellosolve 200 g
A 20 g







 


12




methyl cellosolve 200 g
A 20 g









Reaction catalyst A: a methyl cellosolve solution of 20% p-toluenesulfonic acid


Reaction catalyst B: a methoxy propanol solution of 20% p-toluenesulfonic acid
















TABLE 2







Weight-average
Molecular-weight



Product
molecular
distribution


Synthesis Example
(mole ratio)
weight (Mw)
(Mw/Mn)



















 1
Polymer 1




4300
6.50


 


 2
Polymer 2




4500
6.97


 


 3
Polymer 3




3500
6.29


 


 4
Polymer 4




3600
6.04


 


 5
Polymer 5




4700
5.31


 


 6
Polymer 6




3900
5.87


 


 7
Polymer 7




4100
6.95


 


 8
Polymer 8




3800
6.17


 


 9
Polymer 9




4200
6.30


 










Comparative





Synthesis Example














10
Polymer 10




4100
6.36


 


11
Polymer 11




3400
5.88


 


12
Polymer 12




3700
6.20









Examples and Comparative Examples
Each solution for forming a resist underlayer film (SOL-1 to SOL-12) was prepared by dissolving 20 parts by mass of any of the polymer 1 to 12 obtained in the above Synthesis Examples, 1 part by mass of an acid generator shown by the following AG1, and 4 parts by mass of a crosslinking agent shown by the following CR1, in 100 parts by mass of a propylene glycol monomethyl ether acetate solution containing 0.1% by mass of FC-430 (produces by Sumitomo 3M Ltd.), and filtrating the solution through a 0.1 μm filter made from the fluorine resin.




This solution was applied (by spin coating) onto a silicon substrate, and then baked at 250° C. for 60 seconds to obtain each of coated films UDL-1 to UDL-12 having film thickness of 200 nm. Refractive indexes (n and k) of these films at the wavelength of 193 nm were measured with a spectroscopic ellipsometer with a variable incident light angle (VASE, manufactured by J. A. Woollam Co., Inc.). The results thereof are shown in Table 3. Further, by a nanoindentation test, hardness of each foregoing coated film was measured with a SA-2 nanoindenter instrument (manufactured by Toyo Corporation). The results thereof are also shown in Table 3.













TABLE 3









Solution







for



forming


optical



under-
Under-
Raw
property
Hard-



layer
layer
material
(193 nm)
ness














film
film
polymer
n-value
k-value
(GPa)

















Example
SOL-1
UDL-1
Polymer 1
1.50
0.25
0.60



SOL-2
UDL-2
Polymer 2
1.57
0.20
0.65



SOL-3
UDL-3
Polymer 3
1.53
0.40
0.60



SOL-4
UDL-4
Polymer 4
1.53
0.41
0.55



SOL-5
UDL-5
Polymer 5
1.55
0.50
0.60



SOL-6
UDL-6
Polymer 6
1.55
0.49
0.65



SOL-7
UDL-7
Polymer 7
1.50
0.31
0.55



SOL-8
UDL-8
Polymer 8
1.50
0.26
0.60



SOL-9
UDL-9
Polymer 9
1.55
0.30
0.65


Comparative
SOL-10
UDL-10
Polymer 10
1.50
0.22
0.45


Example
SOL-11
UDL-11
Polymer 11
1.50
0.21
0.40



SOL-12
UDL-12
Polymer 12
1.51
0.22
0.45









As shown in Table 3, the bottom resist layers of UDL-1 to UDL-12 have n values of refractive index about 1.5, and k values of refractive index in the range of 0.20 to 0.50. Thus the bottom resist layers have sufficient antireflection effects as bottom resist layers for trilayer resist. The bottom resist layers have optimum refractive indexes (n values) and optimum extinction coefficients (k values) that provide sufficient antireflection effects in particular when the bottom resist layers have thicknesses of 200 nm or more.
In addition, the resist underlayer films formed by spin-coating have an excellent filling-up property.
When comparisons were made between UDL-1 and UDL-10, between UDL-4 and UDL-11, and between UDL-8 and UDL-12, results of each hardness, i.e., 0.60 and 0.45, 0.55 and 0.40, and 0.60 and 0.45, were obtained. From the results, it can be seen that those polymers containing a substituent group that has a double bond in a 5-membered or a 6-membered alicyclic structure have a higher hardness and a more dense structure than those polymers not containing the said substituent group.
Moreover, from the comparison between UDL-7 and UDL-8, it can be seen that UDL-8, having a higher mole ratio of the cyclohexene structure, has a higher hardness, indicating that the substituent group having a double bond contributes to improvement of the hardness of a coated film.
In addition, it can be seen that the k-value and the hardness can be controlled by presence or not presence of an aldehyde compound shown by the general formula (3).
Examples 1 to 9 and Comparative Examples 1 to 3
Pattern Etching Tests
Each of the resist underlayer film compositions (UDL-1 to UDL-12) was applied (spin-coated) onto a Si wafer substrate (diameter of 300 mm) formed with a SiO2 film having film thickness of 200 nm, and then baked at 250° C. for 60 seconds to obtain a resist underlayer film having film thickness of 200 nm (Examples 1 to 9 and Comparative Examples 1 to 3). A resist intermediate film composition containing a silicon atom (SOG-1) that was prepared by a conventional method was applied, and then baked at 220° C. for 60 seconds to form a resist intermediate film having film thickness of 35 nm; then a resist upper layer film composition (SL resist solution for ArF) was applied, and then baked at 105° C. for 60 seconds to form a resist upper layer film having film thickness of 100 nm. An immersion-top coat (TC-1) was applied onto the resist upper layer film thus obtained, and then baked at 90° C. for 60 seconds to form a top coat having film thickness of 50 nm. The upper layer resist was prepared by dissolving a resin, an acid generator, and a basic compound, with the components and ratio thereof as shown in Table 4, into a solvent containing 0.1% by mass of FC-430 (manufactured by Sumitomo 3M Limited), followed by filtering the thus obtained solution through a 0.1-μm filter made of a fluorinated resin.











TABLE 4







Acid
Basic





generator
compound
Solvent



Polymer
(parts by
(parts by
(parts by


No.
(parts by mass)
mass)
mass)
mass)







SL resist
ArF monolayer resist
PAG 1
Amine 1
PGMEA


for ArF
polymer 1
(6.6)
(0.8)
(2,500)



(100)














PGMEA 2-methoxypropylacetate












A resin having a composition shown in Table 5, was dissolved into a solvent, followed by filtration by a filter made of fluororesin of a 0.1 μm size, to prepare a immersion resist top coat (TC-1).









TABLE 5






Polymer
Organic solvent



(parts by mass)
(parts by mass)







TC-1
Top coat polymer (100)
diisoamyl ether (2700)




2-methyl-1-butanol (270)





Top coat polymer: the following structural formula





Weight-average molecular weight (Mw) = 8,800


Molecular-weight distribution (Mw/Mn) = 1.69






Then, each of the samples thus obtained was exposed with changing the exposure dose by using an ArF immersion exposure instrument NSR-S610C (manufactured by Nikon Corporation; NA 1.30, σ 0.98/0.65, 35-degree dipole s-polarized illumination, 6% half tone phase-shift mask), baked at 100° C. for 60 seconds (PEB), and then developed by an aqueous solution of 2.38% by mass of tetramethyl ammonium hydroxide (TMAH) for 30 seconds to obtain a positive type line-and-space pattern with the resist line width ranging from 50 nm to 30 nm and with 100 nm pitch.
Then, by using an etching equipment Telius (manufactured by Tokyo Electron Ltd.), the silicon-containing intermediate film was processed by dry etching using the resist pattern as a mask; thereafter, the underlayer film was processed by using the silicon-containing intermediate film as a mask, and then the SiO2 film was processed by using the underlayer film as a mask. The results are shown in Table 6.
The etching was done under the conditions shown below.
Transfer Condition of a Resist Pattern to an SOG Film:
Chamber pressure: 10.0 Pa
RF power: 1,500 W
CF4 gas flow rate: 15 sccm
O2 gas flow rate: 75 sccm
Treating time: 15 sec
Transfer Condition of the SOG Film to an Underlayer Film
Chamber pressure: 2.0 Pa
RF power: 500 W
Ar gas flow rate: 75 sccm
O2 gas flow rate: 45 sccm
Treating time: 120 sec
Transfer Condition to an SiO2 Film
Chamber pressure: 2.0 Pa
RF power: 2,200 W
C5F12 gas flow rate: 20 sccm
C2F6 gas flow rate: 10 sccm
Ar gas flow rate: 300 sccm
O2 gas flow rate: 60 sccm
Treating time: 90 sec
Cross section of the pattern was observed by an electron microscope (S-4700, manufactured by Hitachi Ltd.) and the forms were compared. The results are summarized in Table 6.














TABLE 6












Mimimum-









pattern size









without causing









the pattern






Profile after
Profile after

deformation




Upper-

etching for
etching for
Profile after
after



Under-
layer
Pattern
transfer to
transfer to
etching for
the etching



layer
resist
profile after
intermediate
underlayer
transfer to
for transfer to



film
film
development
film
film
substrate
the substrate







Example 1
UDL-1
SL
Perpendicular
Perpendicular
Perpendicular
Perpendicular
35 nm




resist




for ArF


Example 2
UDL-2
SL
Perpendicular
Perpendicular
Perpendicular
Perpendicular
33 nm




resist




for ArF


Example 3
UDL-3
SL
Perpendicular
Perpendicular
Perpendicular
Perpendicular
35 nm




resist




for ArF


Example 4
UDL-4
SL
Perpendicular
Perpendicular
Perpendicular
Perpendicular
36 nm




resist




for ArF


Example 5
UDL-5
SL
Perpendicular
Perpendicular
Perpendicular
Perpendicular
35 nm




resist




for ArF


Example 6
UDL-6
SL
Perpendicular
Perpendicular
Perpendicular
Perpendicular
32 nm




resist




for ArF


Example 7
UDL-7
SL
Perpendicular
Perpendicular
Perpendicular
Perpendicular
35 nm




resist




for ArF


Example 8
UDL-8
SL
Perpendicular
Perpendicular
Perpendicular
Perpendicular
35 nm




resist




for ArF


Example 9
UDL-9
SL
Perpendicular
Perpendicular
Perpendicular
Perpendicular
35 nm




resist




for ArF


Comparative
UDL-10
SL
Perpendicular
Perpendicular
Perpendicular
Perpendicular
39 nm


Example1

resist




for ArF


Comparative
UDL-11
SL
Perpendicular
Perpendicular
Perpendicular
Perpendicular
41 nm


Example2

resist




for ArF


Comparative
UDL-12
SL
Perpendicular
Perpendicular
Perpendicular
Perpendicular
40 nm


Example3

resist




for ArF









As can be seen in Table 3, the underlayer film of the present invention has the refractive index qualified as the underlayer film of an actual use in the trilayer resist for an immersion lithography.
In addition, as shown in Table 6, the resist form after development, the form after etching by oxygen, and the form of the underlayer film after etching of the substrate were excellent. A pattern size after substrate transference changed in accordance with the resist line width formed by the exposure. As a result, pattern wiggling was formed at line width of about 40 nm in a material whose hardness was less than 0.50 GPa. On the other hand, it was found that wiggling was not formed until the pattern size reached 36 nm or lower when the underlayer film having hardness of 0.55 GPa or more was used.
The present invention is not limited to the above-described embodiment. The above-described embodiment is a mere example, and those having the substantially same structure as that described in the appended claims and providing the similar action and effects are included in the scope of the present invention.

## Claims

1. A resist underlayer film composition, wherein the resist underlayer film composition is used for forming a resist underlayer film to be formed in an underlayer of an upper layer film and to be used for photolithography using a multilayer resist method and the composition contains a polymer represented by general formula (4-1) or (4-2) and an acid generator:



wherein:
R1 to R8 independently represent a hydrogen atom, a halogen atom, a hydroxyl group, an isocyanato group, a glycidyloxy group, a carboxyl group, an amino group, an alkoxyl group having 1 to 30 carbon atoms, an alkoxy carbonyl group having 1 to 30 carbon atoms, an alkanoyloxy group having 1 to 30 carbon atoms, or an optionally-substituted saturated or unsaturated organic group having 1 to 30 carbon atoms, wherein two substituent groups arbitrarily selected from each of R1 to R4 or R5 to R8 may be bonded to form a cyclic substituent group within a molecule;
X represents a monovalent organic group with up to 30 carbon atoms and containing one or more of a 5-membered or a 6-membered aliphatic cyclic structure that contains a double bond;
Y is different from X and represents a hydrogen atom or an optionally-substituted monovalent organic group having 1 to 30 carbon atoms;
a, b, c, and d represent a ratio of each unit to a total number of repeating units and satisfy 0≦d<c<a+b<1 and a+b+c+d=1; and
* indicates a bonding position.

2. The resist underlayer film composition according to claim 1, wherein the resist underlayer film composition further contains any one or more of a crosslinking agent and an organic solvent.

3. A patterning process on a body to be processed, wherein:
a resist underlayer film is formed on the body to be processed by using the resist underlayer film composition according to claim 2,
a resist intermediate film is formed on the resist underlayer film by using a resist intermediate film composition containing a silicon atom,
a resist upper layer film is formed on the resist intermediate film by using a resist upper layer film composition of a photoresist composition,
a circuit pattern is formed in the resist upper layer film,
the resist intermediate film is etched by using the resist upper layer film formed with the pattern as a mask,
the resist underlayer film is etched by using the resist intermediate film formed with the pattern as a mask, and
the body to be processed is etched by using the resist underlayer film formed with the pattern as a mask, whereby a pattern is formed on the body to be processed.

4. A patterning process on a body to be processed, wherein:
a resist underlayer film is formed on a body to be processed by using the resist underlayer film composition according to claim 2,
a resist intermediate film is formed on the resist underlayer film by using a resist intermediate film composition containing a silicon atom,
an organic antireflective film (BARC) is formed on the resist intermediate film,
a resist upper layer film is formed on the BARC by using a resist upper layer film composition of a photoresist composition thereby forming a four-layer resist film,
a circuit pattern is formed in the resist upper layer film,
the BARC and the resist intermediate film are etched by using the resist upperlayer film formed with the pattern as a mask,
the resist underlayer film is etched by using the resist intermediate film formed with the pattern as a mask, and
the body to be processed is etched by using the resist underlayer film formed with the pattern as a mask, whereby a pattern is formed on the body to be processed.

5. A patterning process on a body to be processed, wherein:
a resist underlayer film is formed on a body to be processed by using the resist underlayer film composition according to claim 2,
an intermediate film of an inorganic hard mask, selected from any of a silicon oxide film, a silicon nitride film, a silicon oxide nitride film, and an amorphous silicon film, is formed on the resist underlayer film,
a resist upper layer film is formed on the intermediate film of the inorganic hard mask by using a resist upper layer film composition of a photoresist composition,
a circuit pattern is formed in the resist upper layer film,
the intermediate film of the inorganic hard mask is etched by using the resist upperlayer film formed with the pattern as a mask,
the resist underlayer film is etched by using the intermediate film of the inorganic hard mask formed with the pattern as a mask, and
the body to be processed is etched by using the resist underlayer film formed with the pattern as a mask, whereby a pattern is formed on the body to be processed.

6. A patterning process on a body to be processed, wherein:
a resist underlayer film is formed on a body to be processed by using the resist underlayer film composition according to claim 2,
an intermediate film of an inorganic hard mask, selected from any of a silicon oxide film, a silicon nitride film, a silicon oxide nitride film, and an amorphous silicon film, is formed on the resist underlayer film,
an organic antireflective film (BARC) is formed on the intermediate film of the inorganic hard mask,
a resist upper layer film is formed on the BARC by using a resist upper layer film composition of a photoresist composition thereby forming a four-layer resist film,
a circuit pattern is formed in the resist upper layer film,
the BARC and the intermediate film of the inorganic hard mask are etched by using the resist upperlayer film formed with the pattern as a mask,
the resist underlayer film is etched by using the intermediate film of the inorganic hard mask formed with the pattern as a mask, and
the body to be processed is etched by using the resist underlayer film formed with the pattern as a mask, whereby a pattern is formed on the body to be processed.

7. A patterning process on a body to be processed, wherein:
a resist underlayer film is formed on the body to be processed by using the resist underlayer film composition according to claim 1,
a resist intermediate film is formed on the resist underlayer film by using a resist intermediate film composition containing a silicon atom,
a resist upper layer film is formed on the resist intermediate film by using a resist upper layer film composition of a photoresist composition,
a circuit pattern is formed in the resist upper layer film,
the resist intermediate film is etched by using the resist upper layer film formed with the pattern as a mask,
the resist underlayer film is etched by using the resist intermediate film formed with the pattern as a mask, and
the body to be processed is etched by using the resist underlayer film formed with the pattern as a mask, whereby a pattern is formed on the body to be processed.

8. The patterning process according to claim 7, wherein the circuit pattern is formed in the resist upper layer film by a method selected from the group consisting of a photolithography method with a wavelength range between 10 nm or longer and 300 nm or shorter, a direct drawing method by an electron beam, and a nanoimprinting method, or a combination thereof.

9. The patterning process according to claim 7, wherein a development method in the patterning process is an alkaline development or a development by an organic solvent.

10. The patterning process according to claim 7, wherein:
the body to be processed comprises, on a substrate of a semiconductor device, a film selected from the group consisting of a metal film, a metal carbide film, a metal oxide film, a metal nitride film, and a metal oxide nitride film.

11. The patterning process according to claim 10, wherein the metal is selected from the group consisting of silicon, titanium, tungsten, hafnium, zirconium, chromium, germanium, aluminum, copper, iron, and an alloy thereof.

12. A patterning process on a body to be processed, wherein:
a resist underlayer film is formed on the body to be processed by using the resist underlayer film composition according to claim 1,
a resist intermediate film is formed on the resist underlayer film by using a resist intermediate film composition containing a silicon atom,
an organic antireflective film (BARC) is formed on the resist intermediate film,
a resist upper layer film is formed on the BARC by using a resist upper layer film composition of a photoresist composition thereby forming a four-layer resist film,
a circuit pattern is formed in the resist upper layer film,
the BARC and the resist intermediate film are etched by using the resist upperlayer film formed with the pattern as a mask,
the resist underlayer film is etched by using the resist intermediate film formed with the pattern as a mask, and
the body to be processed is etched by using the resist underlayer film formed with the pattern as a mask, whereby a pattern is formed on the body to be processed.

13. A patterning process on a body to be processed, wherein:
a resist underlayer film is formed on the body to be processed by using the resist underlayer film composition according to claim 1,
an intermediate film of an inorganic hard mask, selected from any of a silicon oxide film, a silicon nitride film, a silicon oxide nitride film, and an amorphous silicon film, is formed on the resist underlayer film,
a resist upper layer film is formed on the intermediate film of the inorganic hard mask by using a resist upper layer film composition of a photoresist composition,
a circuit pattern is formed in the resist upper layer film,
the intermediate film of the inorganic hard mask is etched by using the resist upperlayer film formed with the pattern as a mask,
the resist underlayer film is etched by using the intermediate film of the inorganic hard mask formed with the pattern as a mask, and
the body to be processed is etched by using the resist underlayer film formed with the pattern as a mask, whereby a pattern is formed on the body to be processed.

14. The patterning process according to claim 13, wherein the intermediate film of the inorganic hard mask is formed by a CVD method or an ALD method.

15. A patterning process on a body to be processed, wherein:
a resist underlayer film is formed on the body to be processed by using the resist underlayer film composition according to claim 1,
an intermediate film of an inorganic hard mask, selected from any of a silicon oxide film, a silicon nitride film, a silicon oxide nitride film, and an amorphous silicon film, is formed on the resist underlayer film,
an organic antireflective film (BARC) is formed on the intermediate film of the inorganic hard mask,
a resist upper layer film is formed on the BARC by using a resist upper layer film composition of a photoresist composition thereby forming a four-layer resist film,
a circuit pattern is formed in the resist upper layer film,
the BARC and the intermediate film of the inorganic hard mask are etched by using the resist upperlayer film formed with the pattern as a mask,
the resist underlayer film is etched by using the intermediate film of the inorganic hard mask formed with the pattern as a mask, and
the body to be processed is etched by using the resist underlayer film formed with the pattern as a mask, whereby a pattern is formed on the body to be processed.

16. The patterning process according to claim 15, wherein the intermediate film of the inorganic hard mask is formed by a CVD method or an ALD method.

17. The patterning process according to claim 16, wherein the circuit pattern in the resist upper layer film is formed by a method selected from the group consisting of a photolithography method with a wavelength range between 10 nm or longer and 300 nm or shorter, a direct drawing method by an electron beam, and a nanoimprinting method, or a combination thereof.

18. The patterning process according to claim 17, wherein a development method in the patterning process is an alkaline development or a development by an organic solvent.

19. The patterning process according to claim 18, wherein:
the body to be processed comprises, on a substrate of a semiconductor device, a film selected from the group consisting of a metal film, a metal carbide film, a metal oxide film, a metal nitride film, and a metal oxide nitride film.

20. The patterning process according to claim 19, wherein the metal is selected from the group consisting of silicon, titanium, tungsten, hafnium, zirconium, chromium, germanium, aluminum, copper, iron, and an alloy thereof.