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This redline strikeout represents the changes to subpart I since 

the final action “Greenhouse Gas Reporting Program: Final 

Amendments and Confidentiality Determinations for Subpart I,” 

signed by the EPA Administrator Gina McCarthy on August 16, 

2013.

Subpart I—Electronics Manufacturing

§ 98.96 Data reporting requirements.

In addition to the information required by §98.3(c), you 

must include in each annual report the following information for 

each electronics manufacturing facility: 

(a) Annual manufacturing capacity of each fab at your 

facility used to determine the annual manufacturing capacity of 

your facility in Equation I–5 of this subpart.

(b) For facilities that manufacture semiconductors, the 

diameter of wafers manufactured at each fab at your facility 

(mm). 

(c) Annual emissions, on a fab basis as described in 

paragraph (c)(1) through (5) of this section.

(1) When you use the procedures specified in § 98.93(a) of 

this subpart, each fluorinated GHG emitted from each process 

type for which your fab is required to calculate emissions as 

calculated in Equations I–6 and I–7 of this subpart. 

(2) Each fluorinated GHG emitted from each process type or 

process sub-type as calculated in Equations I–8 and I–9 of this 

subpart, as applicable. 
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(3) N2O emitted from all chemical vapor deposition 

processes and N2O emitted from the aggregate of other N2O-using 

manufacturing processes as calculated in Equation I–10 of this 

subpart. 

(4) Each fluorinated heat transfer fluid emitted as 

calculated in Equation 1-16 of this subpart.

(5) When you use the procedures specified in § 98.93(i) of 

this subpart, annual emissions of each fluorinated GHG, on a fab 

basis. 

(d) The method of emissions calculation used in §98.93.

(e) Annual production in terms of substrate surface area 

(e.g., silicon, PV-cell, glass).

(f) [Reserved]

(g) [Reserved]

(h) [Reserved]

(i) [Reserved]

(j) [Reserved]

(k) [Reserved]

(l) [Reserved]

(m) For the fab-specific apportioning model used to 

apportion fluorinated GHG and N2O consumption under § 98.94(c), 

the following information to determine it is verified in 

accordance with procedures in § 98.94(c)(1) and (2): 
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(1) Identification of the quantifiable metric used in your 

fab-specific engineering model to apportion gas consumption for 

each fab, and/or an indication if direct measurements were used 

in addition to, or instead of, a quantifiable metric. 

(2) The start and end dates selected under § 

98.94(c)(2)(i).

(3) Certification that the gas(es) you selected under § 

98.94(c)(2)(ii) for each fab corresponds to the largest 

quantity(ies) consumed, on a mass basis, of fluorinated GHG used 

at your fab during the reporting year for which you are required 

to apportion. 

(4) The result of the calculation comparing the actual and 

modeled gas consumption under § 98.94(c)(2)(iii) and (iv), as 

applicable. 

(5) If you are required to apportion fluorinated GHG 

consumption between fabs as required by § 98.94(c)(2)(v), 

certification that the gas(es) you selected under § 

98.94(c)(2)(ii) corresponds to the largest quantity(ies) 

consumed on a mass basis, of fluorinated GHG used at your 

facility during the reporting year for which you are required to 

apportion. 

(n) [Reserved]

(o) [Reserved]
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(p) Inventory and description of all abatement systems 

through which fluorinated GHGs or N2O flow at your facility and 

for which you are claiming destruction or removal efficiency, 

including: 

(1) The number of abatement systems controlling emissions 

for each process sub-type, or process type, as applicable, for 

each gas used in the process sub-type or process type. 

(2) The basis of the destruction or removal efficiency 

being used (default or site specific measurement according to § 

98.94(f)(4)(i)) for each process sub-type or process type and 

for each gas. 

(q) For all abatement systems through which fluorinated 

GHGs or N2O flow at your facility, for which you are reporting 

controlled emissions, the following: 

(1) Certification that all abatement systems at the 

facility have been installed, maintained, and operated in 

accordance with the site maintenance plan for abatement systems 

that is developed and maintained in your records as specified in 

§ 98.97(d)(9).

(2) If you use default destruction or removal efficiency 

values in your emissions calculations under §98.93(a), (b), or 

(i), certification that the site maintenance plan for abatement 

systems for which emissions are being reported contains 

manufacturer’s recommendations and specifications for 
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installation, operation, and maintenance for each abatement 

system. 

(3) If you use default destruction or removal efficiency 

values in your emissions calculations under § 98.93(a), (b), 

and/or (i), certification that the abatement systems for which 

emissions are being reported were specifically designed for 

fluorinated GHG or N2O abatement, as applicable. You must 

support this certification by providing abatement system 

supplier documentation stating that the system was designed for 

fluorinated GHG or N2O abatement, as applicable. 

(4) For all stack systems for which you calculate 

fluorinated GHG emissions according to the procedures specified 

in § 98.93(i)(3), certification that you have included and 

accounted for all abatement systems and any respective downtime 

in your emissions calculations under § 98.93(i)(3). 

(r) You must report an effective fab-wide destruction or 

removal efficiency value for each fab at your facility 

calculated using Equation I-26, I-27, and I-28 of this subpart, 

as appropriate. 





















  



 



 

j

N O j N O j N O

j

j N O

i

i i

FAB UAFGHG SFGHG C U GWP

FGHG GWP N O GWP

DRE

2 , 2 , 2

2 2

* (1 )*

* *

1 (Eq. I-26)

Where:
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DREFAB = Fab-wide effective destruction or removal 

efficiency value, expressed as a decimal 

fraction.

FGHGi = Total emissions of each fluorinated GHG i 

emitted from electronics manufacturing 

processes in the fab, calculated according to 

the procedures in § 98.93. 

N2Oj = Emissions of N2O from each N2O-emitting 

electronics manufacturing process j in the 

fab, expressed in metric ton CO2 equivalents, 

calculated according to the procedures in § 

98.93.

UAFGHG = Total unabated emissions of fluorinated GHG 

emitted from electronics manufacturing 

processes in the fab, expressed in metric ton 

CO2 equivalents as calculated in Equation I-27 

of this subpart.

SFGHG = Total unabated emissions of fluorinated GHG 

emitted from electronics manufacturing 

processes in the fab, expressed in metric ton 

CO2 equivalents, as calculated in Equation I28 of this subpart. 

CN2O,j = Consumption of N2O in each N2O emitting 

process j, expressed in metric ton CO2

equivalents.

1-UN2O,j = N2O emission factor for each N2O emitting 

process j from Table I-8 of this subpart.

GWPi = GWP of emitted fluorinated GHG i from Table A1 of this part. For those fluorinated GHGs for 

which Table A-1 to subpart A of this part does 

not define a GWP value, use a GWP value of 

2,000 for purposes of this equation.

GWPN2O = GWP of N2O from Table A-1 of this part.

i = Fluorinated GHG.

j = Process Type.

(1) Use Equation I-27 of this subpart to calculate total 

unabated emissions, in metric tons CO2e, of all fluorinated GHG 
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emitted from electronics manufacturing processes whose emissions 

of fluorinated GHG you calculated according to the default 

utilization and by-product formation rate procedures in § 

98.93(a) or § 98.93(i)(4). For each fluorinated GHG i in process 

j, use the same consumption (Cij), emission factors (1-Uij), and 

by-product formation rates (Bijk) to calculate unabated 

emissions as you used to calculate emissions in § 98.93(a) or § 

98.93(i)(4).

    i j

ij ijk k

i j

UAFGHG Cij* (1 Uij )* GWPi C * B * GWP (Eq. I-27)

Where:

UAFGHG = Total unabated emissions of fluorinated GHG 

emitted from electronics manufacturing 

processes in the fab, expressed in metric ton 

CO2e for which you calculated total emission 

according to the procedures in § 98.93(a) or § 

98.93(i)(4).

Cij = Total consumption of fluorinated GHG i, 

apportioned to process j, expressed in metric 

ton CO2e, which you used to calculate total 

emissions according to the procedures in § 

98.93(a) or § 98.93(i)(4). 

Uij = Process utilization rate for fluorinated GHG 

i, process type j, which you used to calculate 

total emissions according to the procedures in 

§ 98.93(a) or § 98.93(i)(4).

GWPi = GWP of emitted fluorinated GHG i from Table A1 of this part. For those fluorinated GHGs for 

which Table A-1 to subpart A of this part does 

not define a GWP value, use a GWP value of 

2,000 for purposes of this equation.
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GWPk = GWP of emitted fluorinated GHG by-product k, 

from Table A-1 of this part. For those 

fluorinated GHGs for which Table A-1 to 

subpart A of this part does not define a GWP 

value, use a GWP value of 2,000 for purposes 

of this equation.

Bijk = By-product formation rate of fluorinated GHG k 

created as a by-product per amount of 

fluorinated GHG input gas i (kg) consumed by 

process type j (kg).

i = Fluorinated GHG.

j = Process Type.

k = Fluorinated GHG by-product.

(2) Use Equation I-28 to calculate total unabated 

emissions, in metric ton CO2e, of all fluorinated GHG emitted 

from electronics manufacturing processes whose emissions of 

fluorinated GHG you calculated according to the stack testing 

procedures in § 98.93(i)(3). For each set of processes, use the 

same input gas consumption (Cif), input gas emission factors 

(EFif), by-product gas emission factors (EFkf), fractions of 

tools abated (aif and af), and destruction efficiencies (dif and 

dkf) to calculate unabated emissions as you used to calculate 

emissions.

         







































k

k

i

if

f kf

kf

i

if i

if if

if C GWP

a d

EF

C GWP

a d

EF

SFGHG * *

1 *

* *

1 *

Eq. I-28)

Where:

SFGHG = Total unabated emissions of fluorinated GHG 

emitted from electronics manufacturing 

processes in the fab, expressed in metric ton 
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CO2e for which you calculated total emission 

according to the procedures in § 98.93(i)(3).

EFif = Emission factor for fluorinated GHG input gas

i, emitted from fab f, as calculated in 

Equation I-19 of this subpart (kg emitted/kg 

input gas consumed). 

aif = Fraction of fluorinated GHG input gas i used 

in fab f in tools with abatement systems 

(expressed as a decimal fraction). 

dif = Fraction of fluorinated GHG i destroyed or 

removed in abatement systems connected to 

process tools in fab f, which you used to 

calculate total emissions according to the 

procedures in § 98.93(i)(3) (expressed as a 

decimal fraction). 

Cif = Total consumption of fluorinated GHG input gas 

i, of tools vented to stack systems that are 

tested, for fab f, for the reporting year, 

expressed in metric ton CO2e, which you used 

to calculate total emissions according to the 

procedures in § 98.93(i)(3) (expressed as a 

decimal fraction). 

EFkf = Emission factor for fluorinated GHG by-product 

gas k, emitted from fab f, as calculated in 

Equation I-20 of this subpart (kg emitted/kg 

of all input gases consumed in tools vented to 

stack systems that are tested).

af = Fraction of input gases used in fab f in tools 

with abatement systems (expressed as a decimal 

fraction). 

dkf = Fraction of fluorinated GHG by-product k 

destroyed or removed in abatement systems 

connected to process tools in fab f, which you 

used to calculate total emissions according to 

the procedures in § 98.93(i)(3) (expressed as 

a decimal fraction).

GWPi = GWP of emitted fluorinated GHG i from Table A1 of this part. For those fluorinated GHGs for 

which Table A-1 of subpart A to this part does 
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not define a GWP value, use a GWP value of 

2,000 for purposes of this equation.

GWPk = GWP of emitted fluorinated GHG by-product k, 

from Table A-1 of this part. For those 

fluorinated GHGs for which Table A-1 to 

subpart A of this part does not define a GWP 

value, use a GWP value of 2,000 for purposes 

of this equation.

i = Fluorinated GHG.

k = Fluorinated GHG by-product.

(s) Where missing data procedures were used to estimate 

inputs into the fluorinated heat transfer fluid mass balance 

equation under § 98.95(b), the number of times missing data 

procedures were followed in the reporting year and the method 

used to estimate the missing data. 

(t) [Reserved]

(u) [Reserved]

(v) [Reserved]

(w) If you elect to calculate fab-level emissions of 

fluorinated GHG using the stack test methods specified in § 

98.93(i), you must report the following in paragraphs (w)(1) and 

(2) for each stack system, in addition to the relevant data in 

paragraphs (a) through (v) of this section: 

(1) The date of any stack testing conducted during the 

reporting year, and the identity of the stack system tested. 

(2) An inventory of all stack systems from which process 

fluorinated GHG are emitted. For each stack system, indicate 

whether the stack system is among those for which stack testing 
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was performed as per § 98.93(i)(3) or not performed as per § 

98.93(i)(2). 

(x) If the emissions you report under paragraph (c) of this 

section include emissions from research and development 

activities, as defined in § 98.6, report the approximate 

percentage of total GHG emissions, on a metric ton CO2e basis, 

that are attributable to research and development activities, 

using the following ranges: less than 5 percent, 5 percent to 

less than 10 percent, 10 percent to less than 25 percent, 25 

percent to less than 50 percent, 50 percent and higher. For 

those fluorinated GHG that do not have GWP values listed in 

Table A-1 of subpart A of this part, you must use a GWP value of 

2,000 in calculating CO2e for purposes of this paragraph. 

(y) If your semiconductor manufacturing facility emits more 

than 40,000 metric ton CO2e of GHG emissions, based on your most 

recently submitted annual report (beginning with the 2015 

reporting year) as required in paragraph (c) of this section, 

from the electronics manufacturing processes subject to 

reporting under this subpart, you must prepare and submit a 

triennial (every 3 years) technology assessment report to the 

Administrator (or an authorized representative) that meets the 

requirements specified in paragraphs (y)(1) through (6) of this 

section. Any other semiconductor manufacturing facility may 

voluntarily submit this report to the Administrator. 
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(1) The first report must be submitted with the annual GHG 

emissions report that is due no later than March 31, 2017, and 

subsequent reports must be delivered every 3 years no later than 

March 31 of the year in which it is due. 

(2) The report must include the information described in 

paragraphs (y)(2)(i) through (v) of this section. 

(i) It must describe how the gases and technologies used in 

semiconductor manufacturing using 200 mm and 300 mm wafers in 

the United States have changed in the past 3 years and whether 

any of the identified changes are likely to have affected the 

emissions characteristics of semiconductor manufacturing 

processes in such a way that the default utilization and byproduct formation rates or default destruction or removal 

efficiency factors of this subpart may need to be updated.

(ii) It must describe the effect on emissions of the 

implementation of new process technologies and/or finer line 

width processes in 200 mm and 300 mm technologies, the 

introduction of new tool platforms, and the introduction of new 

processes on previously tested platforms. 

(iii) It must describe the status of implementing 450 mm 

wafer technology and the potential need to create or update 

default emission factors compared to 300 mm technology. 

(iv) It must provide any utilization and by-product 

formation rates and/or destruction or removal efficiency data 
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that have been collected in the previous 3 years that support 

the changes in semiconductor manufacturing processes described 

in the report. 

(v) It must describe the use of a new gas, use of an 

existing gas in a new process type or sub-type, or a fundamental 

change in process technology. 

(3) If, on the basis of the information reported in 

paragraph (y)(2) of this section, the report indicates that GHG 

emissions from semiconductor manufacturing may have changed from 

those represented by the default utilization and by-product 

formation rates in Tables I-3 or I-4, or the default destruction 

or removal efficiency values in Table I-16 of this subpart, the 

report must lay out a data gathering and analysis plan focused 

on the areas of potential change. The plan must describe the 

elements in paragraphs (y)(3)(i) and (ii). 

(i) The testing of tools to determine the potential effect 

on current utilization and by-product formation rates and 

destruction or removal efficiency values under the new 

conditions.

(ii) A planned analysis of the effect on overall facility 

emissions using a representative gas-use profile for a 200 mm, 

300 mm, or 450 mm fab (depending on which technology is under 

consideration). 
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(4) Multiple semiconductor manufacturing facilities may 

submit a single consolidated 3-year report as long as the 

facility identifying information in § 98.3(c)(1) and the 

certification statement in § 98.3(c)(9) is provided for each 

facility for which the consolidated report is submitted. 

(5) The Administrator will review the report received and 

determine whether it is necessary to update the default 

utilization rates and by-product formation rates in Tables I-3, 

I-4, I-11, and I-12 of this subpart and default destruction or 

removal efficiency values in Table I-16 of this subpart based on 

the following: 

(i) Whether the revised default utilization and by-product 

formation rates and destruction or removal efficiency values 

will result in a projected shift in emissions of 10 percent or 

greater. 

(ii) Whether new platforms, processes, or facilities that 

are not captured in current default utilization and by-product 

formation rates and destruction or removal efficiency values 

should be included in revised values. 

(iii) Whether new data are available that could expand the 

existing data set to include new gases, tools, or processes not 

included in the existing data set (i.e. gases, tools, or 

processes for which no data are currently available). 
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(6) The Administrator will review the reports within 120 

days and will notify you of a determination whether it is 

necessary to update any default utilization and by-product 

formation rates and/or destruction or removal efficiency values. 

If the Administrator determines it is necessary to update 

default utilization and by-product formation rates and/or 

destruction or removal efficiency values, you will then have 180 

days from the date you receive notice of the determination to 

execute the data collection and analysis plan described in the 

report and submit those data to the Administrator.