# Patent

## Title
Multilayer thin-film back contact system for flexible photovoltaic devices on polymer substrates

## Abstract

A polymer substrate and back contact structure for a photovoltaic element, and a photovoltaic element include a CIGS photovoltaic structure, a polymer substrate having a device side at which the photovoltaic element can be located and a back side opposite the device side. A layer of dielectric is optionally formed at the back side of the polymer substrate. A metal structure is formed at the device side of the polymer substrate.

## Background
CROSS-REFERENCE TO RELATED APPLICATIONS
This application is a continuation-in-part of U.S. non-provisional application Ser. No. 14/210,209 filed Mar. 13, 2014, U.S. Pat. No. 9,209,322 B2, which is a continuation-in-part of U.S. non-provisional application Ser. No. 14/198,209 filed Mar. 5, 2014, U.S. Pat. No. 9,219,179 B2, which is a continuation of U.S. non-provisional application Ser. No. 13/572,387 filed Aug. 10, 2012, which claims the benefit of priority to U.S. Provisional Patent Application No. 61/522,209 filed Aug. 10, 2011. Each of the above-mentioned applications is incorporated herein by reference.


BACKGROUND
1. Technical Field
This disclosure relates to photovoltaic modules and methods of manufacturing photovoltaic modules and, more particularly, to photovoltaic modules and methods of manufacturing photovoltaic modules in which mechanical distortion in the modules is substantially reduced or eliminated.
2. Discussion of the Related Art
One type of flexible photovoltaic (PV) module is formed as a thin-film device on a polymeric substrate. An example of such devices is the Copper-Indium-Gallium-Selenide (CIGS) device. CIGS devices present many challenges in terms of the thin-film deposition processes, device patterning, and final assembly/packaging. Polymer substrates are of great significance since high-temperature variations of the material are adequate to accommodate CIGS processing while the material maintains its dielectric properties, which enables monolithic integration without any additional insulating films.
A fundamental challenge in flexible CIGS devices is in the deposition of a metallic back contact onto the polymer prior to the deposition of the CIGS p-type absorber layer. This back contact makes ohmic contact to the CIGS and allows for current to flow through the device and be collected through interconnects to the leads attached to the electrical load. Thus, this back contact, which is usually a metal, must maintain high electrical conductivity, both before and after device processing. It must also survive the deposition environment for the subsequent thin film deposition steps.
SUMMARY
According to a first aspect, a polymer substrate and back contact structure for a photovoltaic element is provided. The structure includes a polymer substrate having a device side at which the photovoltaic element can be located and a back side opposite the device side. A layer of dielectric is formed at the back side of the polymer substrate. A metal structure is formed at the device side of the polymer substrate.
According to another aspect, a photovoltaic element is provided. The photovoltaic element includes a CIGS photovoltaic structure and a polymer substrate having a device side at which the CIGS photovoltaic structure can be located and a back side opposite the device side. A layer of dielectric is formed at the back side of the polymer substrate. A metal structure is formed at the device side of the polymer substrate between the polymer substrate and the CIGS photovoltaic structure.
According to another aspect, a method for forming a photovoltaic element includes the following steps: (1) disposing a first adhesion layer on a back side of a polymer substrate; (2) disposing a dielectric layer on the first adhesion layer; (3) after the step of disposing the dielectric layer, disposing a metal structure on a device side of the polymer substrate, the device side being opposite of the back side; and (4) disposing a CIGS photovoltaic structure on the metal structure.
According to another aspect, a method for forming a photovoltaic element includes the following steps: (1) disposing a dielectric layer on a back side of a polymer substrate; (2) disposing a metallic film layer on a device side of the polymer substrate, the device side being opposite of the back side; (3) disposing a molybdenum cap layer on the metallic film layer at least partially using a vacuum-based sputter deposition process at a pressure of less than 20 millitorr; and (4) disposing a CIGS photovoltaic structure on the molybdenum cap layer.
According to another aspect, a method for forming a photovoltaic element includes the following steps: (1) disposing a backside metal layer on a back side of a polymer substrate using a vacuum-based sputter deposition process at a pressure of less than 6 millitorr; (2) disposing a metallic film layer on a device side of the polymer substrate, the device side being opposite of the back side; (3) disposing a molybdenum cap layer on the metallic film layer; and (4) disposing a CIGS photovoltaic structure on the molybdenum cap layer.
According to another aspect, a photovoltaic element includes a polymer substrate having a device side and a back side opposite the device side. A dielectric layer is disposed on the back side of the polymer substrate, and a metallic film layer is disposed on the device side of the polymer substrate. A molybdenum cap layer is disposed on the metallic film layer, and the molybdenum cap layer has a density of at least 85% of the bulk density of molybdenum. A CIGS photovoltaic structure is disposed on the molybdenum cap layer.
According to another aspect of the invention, a photovoltaic element includes a polymer substrate having opposing device and back sides. At least one stress-matching layer disposed on the back side of the polymer substrate, and the stress-matching layer includes a dielectric layer. A metal structure is disposed on the device side of the polymer substrate. The metal structure includes a copper-based layer disposed on the device side of the polymer substrate, a molybdenum-based cap layer disposed on the copper-based layer, and a Copper-Indium-Gallium-Selenide (CIGS) photovoltaic structure disposed on the molybdenum-based cap layer.
According to another aspect of the invention, a photovoltaic element includes a polymer substrate having a coefficient of thermal expansion of at least 4 parts per million per degree Celsius but not exceeding 12 parts per million per degree Celsius. A metal structure is disposed on the device side of the polymer substrate. The metal structure includes a copper-based layer disposed on the polymer substrate, an aluminum-based barrier layer disposed on the copper-based layer, a molybdenum-based cap layer disposed on the aluminum-based barrier layer; and a CIGS photovoltaic structure disposed on the molybdenum-based cap layer.
According to another aspect of the invention, a method for forming a photovoltaic element includes the following steps: (1) disposing a dielectric layer on a back side of a polymer substrate; (2) disposing a copper-based layer on a device side of the polymer substrate, the device side being opposite of the back side; (3) disposing a molybdenum-based cap layer on the copper-based layer; and (4) disposing a CIGS photovoltaic structure on the molybdenum-based cap layer.
According to another aspect of the invention, a photovoltaic element includes a polymer substrate having opposing device and back sides, a coefficient of thermal expansion of at least 4 parts per million per degree Celsius but not exceeding 12 parts per million per degree Celsius, and a metal structure disposed on the device side of the polymer substrate. The metal structure includes a copper-based layer disposed on the polymer substrate, a molybdenum-based cap layer disposed on the copper-based layer; and a CIGS photovoltaic structure disposed on the molybdenum-based cap layer.
According to another aspect of the invention, a photovoltaic element, includes a polymer substrate having opposing device and back sides, and a metal structure disposed on the device side of the polymer substrate. The metal structure includes a copper-based layer disposed on the device side of the polymer substrate, a molybdenum-based cap layer disposed on the copper-based layer, and a Copper-Indium-Gallium-Selenide (CIGS) photovoltaic structure disposed on the molybdenum-based cap layer.
According to another aspect of the invention, a method for forming a photovoltaic element includes the following steps: (1) disposing a copper-based layer on a device side of the polymer substrate, the device side being opposite of a back side; (2) disposing a molybdenum-based cap layer on the copper-based layer; and (3) disposing a CIGS photovoltaic structure on the molybdenum-based cap layer



BRIEF DESCRIPTION OF THE DRAWINGS
The foregoing and other features and advantages will be apparent from the more particular description of preferred aspects, as illustrated in the accompanying drawings, in which like reference characters refer to the same parts throughout the different views. The drawings are not necessarily to scale. In the drawings, the thickness of layers and regions may be exaggerated for clarity.
FIG. 1 includes a graph of intrinsic stress in Mo as a function of Ar pressure during a vacuum-based sputtering Mo deposition process.
FIG. 2 includes a schematic cross-sectional view of a back contact for a flexible monolithically integrated CIGS photovoltaic device on a polymer utilizing a metallic multilayer as a top contact and an oxide as a back-side coating, according to some exemplary embodiments.
FIG. 3 includes an image of a dielectric-polymer-metal-Mo-CIGS stack structure, according to some exemplary embodiments.
FIG. 4 includes a schematic cross-sectional view of a device including a bilayer Mo cap layer, according to some exemplary embodiments.
FIG. 5 illustrates a method for forming a photovoltaic element, according to some exemplary embodiments.
FIG. 6 illustrates another method for forming a photovoltaic element, according to some exemplary embodiments.
FIG. 7 includes a schematic cross-sectional view of a device including a backside Mo layer, according to some exemplary embodiments.
FIG. 8 includes a schematic cross-sectional view of another device including a bilayer Mo cap layer, according to some exemplary embodiments.
FIG. 9 includes a schematic cross-sectional view of a device including an aluminum-based barrier layer, according to some exemplary embodiments.
FIG. 10 includes a schematic cross-sectional view of a device including an aluminum-based barrier layer and a bilayer Mo cap layer, according to some exemplary embodiments.
FIG. 11 illustrates a method for forming a photovoltaic element including a copper-based layer, according to some exemplary embodiments.



DETAILED DESCRIPTION
For CIGS devices, molybdenum (Mo) has been a common choice of material for a back contact, regardless of the substrate. While Mo can be deposited in a straightforward manner using DC sputtering or other thin film deposition methods, the wide range of stress states possible with sputtering can particularly complicate deposition onto flexible substrates, particularly those that do not exhibit significant stiffness, such as polymers. Unlike rigid substrates where the film stresses can readily be borne by the substrate, film stresses can have a significant impact upon the life, surface topology, and physical properties of flexible substrates, particularly substrates made from polymers. This class of substrates, while exhibiting excellent dielectric properties that allow monolithic integration, also typically exhibits high and inconsistent thermal expansion coefficient compared to the metals and semiconductors of the CIGS layer stack. Thus, there exist extrinsic stresses that combine with intrinsic stresses that can warp, wrinkle, distort and otherwise diminish the integrity of these flexible substrates. In addition, the electrical and mechanical properties of a back contact also affect the device performance and adhesion.
FIG. 1 contains a graph of intrinsic stress state of sputtered Mo as a function of Argon pressure during a vacuum-based sputtering Mo deposition process. A careful balance of intrinsic and extrinsic stresses in the back contact deposition step is thus desirable to provide a viable flexible photovoltaic device. The method of deposition, deposition pressure, rates, web process gasses, web speed, and number of passes are all variables that are balanced to provide the best back contact for the device.
According to the present disclosure, a multilayer approach using two or more different metals in the back contact is used to replace the prior Mo film deposited onto both sides of a high-temperature polymeric substrate. According to the disclosure, the polymeric substrate can be, for example, polyimide, polybenzobisoxazole (PBO), insulated metal foils, or other such material for flexible, monolithically integrated CIGS modules using a high-temperature CIGS deposition process, such as multi-source evaporation. Unlike prior processes which use Mo films on both sides of the polymer in order to balance the stresses of this process, along with subsequent CIGS, CdS and TCO depositions, according to some exemplary embodiments, a stress-balanced back contact is formed using a dielectric film on the back side of the polymer substrate, a primary high-conductivity but low-modulus and low-cost metallic film layer, for example, aluminum (Al), applied to the front side of the polymer, followed by a thin cap of Mo over the Al film layer. The Mo may be disposed onto the Al with or without added oxygen.
FIG. 2 contains a schematic cross-sectional view of a back contact for a flexible monolithically integrated CIGS photovoltaic device on a polymer utilizing a metallic multilayer as a top contact and an oxide as a back-side coating, according to some exemplary embodiments. Referring to FIG. 2, the polymer substrate 14 may be prepared to receive the disposed materials by plasma cleaning, annealing, or other processes best suited for a given combination of substrate and photovoltaic (PV) device. The plasma treatment involves one or more gases. The amounts and percentage of each gas may vary to optimize the treatment for a particular material being deposited. The power density of the plasma and the duration of treatment may also be varied to optimize the treatment. Annealing or heating the substrate before, during, or after plasma treatment may further optimize the treatment. The device 10 according to some exemplary embodiments includes the dielectric film 12, which can be, for example, an oxide such as SiO2, Al2O3, a nitride, an oxynitride such as an oxynitride of Al or Si, and which, in this particular exemplary embodiment, is Al2O3, formed at the back side of the polymer substrate 14. Other dielectric coating possibilities include high-temperature silicone, silicone resins, and other polyimides that may not have the structural properties to function as a stand-alone substrate, but that have high-temperature and high-emissivity properties and that are capable of adding compressive stress to the polymer substrate. An optional adhesion layer 13 may be formed on the back side of the polymer substrate 14 before the dielectric film 12 is formed. The adhesion layer 13 can include at least one of molybdenum, aluminum, chromium, titanium, titanium nitride (TiN), a metal oxide, and a metal nitride. The optional adhesion layer 13 can be made very thin, i.e., thin enough to have very low conductivity and having little to no impact on the back side emissivity. The optional adhesion layer 13 may oxidize some during subsequent oxide deposition of the dielectric film 12, forming, for example, Mo oxide, Cr oxide, Ti oxide, etc. The polymer substrate 14 can be, for example, polyimide, polybenzobisoxazole (PBO), insulated metal foil, or other such material. Another optional adhesion layer 15 can be formed over the polymer substrate 14 to aid in adhesion of the subsequent metallic film layer 16. The adhesion layer 15 can include at least one of molybdenum, aluminum, chromium, titanium, titanium nitride (TiN), a metal oxide, and a metal nitride. The metallic film 16 is formed on the front side of the polymer substrate 14 or formed on the front side of the adhesion layer 15 if it is present. The metallic film 16 can be a high-conductivity but low-modulus and low-cost metallic film made of, for example, aluminum, copper, brass, bronze, or other such material. The thin cap layer 18 of Mo is formed over the metallic film 16. The Mo cap layer 18 may be formed with or without added oxygen. The CIGS layer 20 is formed over the Mo cap layer 18, which enables the proper chemical, mechanical and electrical interface to the CIGS layer 20. A buffer layer 22, formed of, for example, CdS, may be formed over the CIGS layer 20, and a transparent conductive oxide (TCO) layer 24 may be formed over the buffer layer 22.
FIG. 3 contains photographs of several photovoltaic elements illustrating the inventive concept of depositing a stress-matching layer on the back side of a polymer substrate to balance the stresses of the metal and photovoltaic stacks on the front side of the substrate. Presented in FIG. 3 are four images of the dielectric-polymer-metal-Mo-CIGS stack structure of the inventive concept, the disposing of a stress-matching layer, with various (four) thicknesses of an Al2O3 back side dielectric layer 12 that serves as an embodiment of a stress-matching layer. The four exemplary thicknesses of the stress-matching dielectric layer 12 are 0.0 nm (no back side dielectric layer or stress-matching coating), 210 nm, 350 nm and 640 nm. As illustrated in FIG. 3, according to the inventive concept, stress balancing is achieved with the addition of the stress-matching layer. The combination of back side stress-matching dielectric film 12, the top-side metallic contacts 16 that serve as the electrical back contact, and subsequent depositions, all balance their respective stresses to achieve a flat material that is better suited for mass production processes. In this embodiment of the stress-matching layer, the stress-matching layer is a dielectric layer. However, the stress-matching layer is not required to be a dielectric layer. It may be some other material, including metal layers, such as Mo. In fact, in some embodiments, stress balancing is achieved without a stress-matching layer.
Referring to FIG. 3, the stack of dielectric-polymer-metal-Mo-CIGS according to the inventive concept, wherein the dielectric film 12 is a stress-matching film, has very little compressive stress compared to similar Mo-only back contact films. This is due to the presence of the metal film 16. With the addition of the stress-matching dielectric film 12 on the back side, the substrate begins to flatten and at a thickness of, for example, 640 nm, all stresses are balanced. According to some exemplary embodiments, depositing a film that can maintain sufficient electrical conductivity while surviving a high-temperature CIGS deposition process in which it is subjected to high temperatures (exceeding 400° C.) in a selenium (Se)-rich environment is a major advancement in the scale-up of flexible monolithically integrated CIGS devices.
Mo presents a challenge in that, not only can the material exhibit dramatically different inherent stresses due to variations in process parameters, but mismatches in the coefficient of thermal expansion (CTE) between Mo and the underlying substrate coupled with high-temperature processing, the stiffness of the substrate, and ultimately, the mechanical properties of the subsequent films, can all lead to large stresses in the resultant multilayer construction. Mo can be deposited in various intrinsic stress states ranging from tensile to compressive in nature, as shown in FIG. 1. With as-deposited Mo films, a transition between tensile and compressive intrinsic stresses in Mo occurs approximately at 6 mTorr with the compressive stress state exhibiting a maxima at approximately 1.2 Pa. However, regardless of the as-deposited stress state of Mo on the polymer, a compressive stress state is the result of Mo on polymer after a high-temperature exposure, e.g., CIGS deposition temperature. These stresses can lead to cracking of the thin films, or even the substrate, particularly if extrinsic stresses are added in the form of bending or otherwise flexing the coated substrate. Stress balancing of the highly compressive Mo back contact, in consideration of subsequent deposition steps, is achieved by depositing a compressive film to the substrate backside. The compressive film matches the stress of the compressive metal and balances the stresses placed on the substrate. In order to achieve a flat material, the stress state is balanced, and as the top surface has multiple metal, semiconductor, and oxide layers, a corresponding Mo layer applied to the bottom side of the substrate is required to balance the multiple layers on the top side, although in most cases the type of stress-matching Mo film used on the back side (for stress balancing) is deposited differently and to a different thickness than the Mo film on the front (for back side electrical conductor). Wrinkle reduction is one of the primary reasons that batch processing of panels through the patterning cell is performed to prevent damage to the closely-moving ink head printing operations. However balancing the front and back stresses is much more difficult when the stress levels are high.
Table 1 illustrates the challenge in depositing a metal, particularly Mo, onto a high-temperature polymeric substrate. Both Mo and Al have a much higher modulus by an order of magnitude than the polymer, while the thermal expansion may be a closer match between Al and the polymer than Mo. More importantly, the yield stress of the Al is much lower than Mo, and the stress at 5% elongation of the polymer is closer to Al than Mo. Finally, the ultimate stress of the Mo is nearly twice that of the polymer.







TABLE 1





MECHANICAL PROPERTIES OF ALUMINUM AND MOLYBDENUM COMPARED


TO A TYPICAL HIGH-TEMPERATURE POLYMERIC SUBSTRATE



























Thermal
Linear







Young's

Conductivity
Expansion
Melting
Yield
Ultimate



Specific
Modulus
Poisson's
(at 0° C.)
Coefficient
Point
Stress
Stress


Metal
Gravity
GPa
Ratio
W/(m ° K)
×10−6° C.
K
MPa
MPa





Al
2.7
68.95
0.33
237
25
933
 30-140
 60-140


Mo
10.2
275.80
0.32
138
5
2893
585-690
690-827









Thermal
Linear

Stress at




Tensile

Conductivity
Expansion
Max
5%
Tensile



Specific
Modulus
Elongation
(at 0° C.)
Coefficient
Temp
Elongation
Strength


Substrate
Gravity
GPa
(%)
W/(m ° K)
×10−6/° C.
K
MPa
MPa





 
1.5
6.9-9.1
42-50
0.29
12-20
~723
210-260
360-520









In accordance with some exemplary embodiments, the overall stress state in the polymer is reduced with the addition of a stress-matching layer, and, as a result, a more planar, wrinkle-free substrate is provided. Because Mo is used for a proper interface to CIGS, but is a major reason for the high stresses in the substrate, according to the inventive concept, its use has been minimized to the minimum required to mask the work function of the underlying primary metallic film, as shown in Table 2. In some exemplary embodiments, the primary metallic film of choice is aluminum (Al), although formulations using copper (Cu) and other highly electrically conductive materials, for example, brass or bronze, can be used. The CIGS device relies on the proper work function of its metallic back contact to function properly. While it is possible to use metallic foils (without insulting layers) with subsequent Mo deposition to mask the work function of the metal foil substrate, the inherent stiffness of the non-polymeric substrates enables the ability to apply greater Mo film thicknesses without the Mo stress overwhelming the substrate. With the polymeric process according to embodiments of the inventive concept, and their lower mechanical properties, the desirable masking effect by the Mo of the work function of the underlying primary thin film back contact material (Al, Mo, etc.) is carefully balanced with the high stresses in Mo that can increase with greater Mo thickness. Furthermore, the use of metallic foils without insulating layers precludes the straightforward ability to integrate monolithically the photovoltaic device, and as such, limit device construction to discrete individual cells.







TABLE 2







ELECTRICAL PROPERTIES OF ALUMINUM AND


MOLYBDENUM (AT 20° C.) COMPARED TO A


TYPICAL POLYMERIC SUBSTRATE










Material
ρ [Ω · m]
σ [S/m]
Work Function (eV)





Aluminum
2.82 × 10−8
3.5 × 10−7
4.08


Molybdenum
5.34 × 10−8
1.8 × 10−7
4.60


Upilex PI
~10+17
~10−17
Ń









The AlMo stack of some exemplary embodiments provides several advantages over conventional single or multi-layer Mo back contacts.

    
    
        1) The film can be made with the bulk of the stress state dictated by the Al film 16, which is far thicker than the Mo cap 18. Thus, the overall stress state in the front side metallization is reduced.
        2) The AlMo stack achieves a far greater electrical in-plane conductivity than the baseline Mo film, exceeding an order of magnitude improvement as is shown in Table 2. This results in the ability to carry greater current than prior devices, and enables greater cell pitch (width) for monolithically integrated modules. Larger cells equates to fewer interconnects, which reduces the interconnect-related losses. Measurements with samples indicate an order of magnitude reduction in sheet resistance, dropping from baseline 2 Ω/square to 0.2 Ω/square. This improvement allows for cell width (pitch) to increase to almost double that demonstrated in baseline conditions, thereby reducing the interconnects by a factor of two as well.
        3) While Mo has adequate electrical conductivity for some applications, it constrains the performance of CIGS that possesses high current density (>30 mA/cm2). By using only a thin Mo cap 18, and relying on the conductivity of Al to provide the bulk of the electrical conductivity, the stacked material of the embodiments provides very little sheet resistance. Table 2 also compares the electrical properties of Al and Mo. Mo has approximately half the electrical conductivity of Al and less than 1⁄3 the electrical conductivity of Cu. However, as the work function of Al is significantly lower than that of Mo, and that Al would diffuse readily into CIGS, a cap of Mo is retained to shield the low Al work function from CIGS. Likewise, Cu would diffuse into the CIGS during deposition when using Cu, brass or bronze as metal layer 16. Thus, by using a Mo cap, the best electrical properties are retained while providing the proper work function interface to ensure a successful photoelectric effect.
        4) As an added benefit to the electrical conductor construction, the thin Mo cap 18 presents a much lower electrical resistance pathway through the P2 laser scribe, e.g., via scribe, into the higher conductivity Al. Thus, while the baseline P2 interconnect resistance under the process of record (POR) is nominally between 500-1000 mΩ-cm, the P2 resistance for this new interconnect drops to 2 mΩ-cm. This alone will account for approximately 5% boost in power output for a given module by reducing module losses.
    
    


Because Mo that is sufficiently thick to provide adequate electrical conductivity on polymer contributes adversely to the stress state in the photovoltaic stack, minimizing the Mo content of the device back contact allows for another material, other than Mo, to serve as a back-side film, according to exemplary embodiments. According to the present disclosure, by eliminating dependence upon Mo on the back-side film, and by minimizing it in the back contact, significant advantages over the prior art are realized.

    
    
        a) Mo serves as an interface to the CIGS, and thus, masks the Al work function in order to allow the device to work optimally. Other metallic elements or alloys can be utilized as desired for new substrates as they become available.
        b) The overall reduced stress state in the back contact film provides options for the back side film. In one case, an inexpensive alumina (Al2O3) film that is a good insulator and provides some level of moisture protection for the polymer can be employed. However, other oxide films can be employed to enhance bonding strength to packaging, and oxynitrides can be substituted for better moisture protection as well.
        c) By virtue of reducing the stress state in the films on either side of the polymer substrate, the resultant stress experienced by the polymer is also reduced. Particularly for high-temperature polymers used in roll-to-roll deposition, the reduced stress state will result in reduced wrinkling and waviness of the web, particularly after high-temperature excursions such as those experienced in CIGS deposition.
        d) As new flexible, non-conductive substrates are developed, such as Poly (p-phenylene-2, 6-benzobisoxazole) (PBO) and are introduced into the flexible CIGS market, experience in reducing the stress imparted by the back contact can result in a construction that may eliminate the need for the back-side film altogether.
        e) As achieving the desired Mo stress state is important, deposition rate is limited with standard Mo films, often requiring multiple thinner passes to achieve the desired electrical and stress properties. State-of-the-art films using the process of record (POR) is 390 nm on the front side and 620 nm on the back side of the substrate, for a total of just over a micron (1,010 nm). The nominal Mo thickness with the new construction according to the exemplary embodiments is approximately 100-200 nm, or an 80-90% reduction in the amount of Mo in the device. Using the stress-matched back contact of the exemplary embodiments significantly reduces the need to deposit in multiple layers, and furthermore, as the film is significantly thinner, at least a 5× throughput increase from the back contact chambers should result, as Al is much easier to deposit at high web rates.
        f) Mo is a relatively expensive film in the CIGS device, and is approximately 35 times the cost of Al. As noted above, Mo reduction and substitution of common elements (Al, Al2O3) reduces the cost of the back contact dramatically. Even in replacing the back-side Mo with Al2O3 should have a noticeable effect.
        As noted above, the Al—Mo back contact has demonstrated dramatically lower sheet resistance and P2 interconnect resistance. Combined, these effects will account for a percentage point of efficiency when module design is optimized to take full advantage of the effects. Even with the same module design, module power should increase by 5% due to the reduced P2 resistance.
    
    


According to the exemplary embodiments, elimination of a metal back side film and replacing it with a dielectric layer provides thermal management in the device, in addition to stress management, as described herein in detail. Heating of substrates in a vacuum includes conductive heating (direct contact to a substrate) and/or radiative heating (energy radiating from one source to another). Radiative heating is the most common means of transferring thermal energy to the substrate, but the degree to which energy is conveyed is dependent upon the substrate's absorptivity (ability to absorb energy) and emissivity (ability to radiate heat into the environment). Metals typically have lower emissivity than, for example, oxide films; thus, metal surfaces do not give up their heat as easily as oxides. Thus a polymer coated with metal on both sides can trap the heat within the sandwiched polymer substrate. In a vacuum, a surface coated with a high-emittance coating, such as an oxide or nitride, can provide radiative cooling to that surface and the substrate. A cooler back side coating and substrate helps to keep the substrate from degrading and embrittling during high device-side temperatures, and thus enables higher device-side temperatures that can lead to higher quality solar absorber layers.
Applicant has additionally determined that it is desirable that Mo cap layer 18 be relatively dense to minimize diffusion of metal, such as aluminum or copper, from metallic film layer 16 into CIGS layer 20. For example, in some embodiments, Mo cap layer 18 has a density of at least 85% of the bulk density of molybdenum so that Mo cap layer 18 acts as a diffusion barrier, thereby potentially enabling aluminum, copper, or other metal, of metallic film layer 16, to be disposed adjacent to Mo cap layer 18 without significant diffusion of the metal through Mo cap layer 18. High density of Mo cap layer 18 is obtained, for example, by using a low-pressure vacuum-based sputter deposition process to deposit Mo cap layer 18. For example, in a particular embodiment, Mo cap layer 18 is deposited by a vacuum-based sputter deposition process at a pressure of less than 20 millitorr (mTorr), preferably at less than 6 mTorr, to obtain high density of Mo cap layer 18.
In some embodiments, Mo cap layer 18 includes a plurality of sublayers, where a sublayer closest to metallic film layer 16 has a high density, and one or more other sublayers further from metallic film layer 16 have lower densities. For example, FIG. 4 is a schematic cross-sectional view of a device 400, which is similar to device 10 of FIG. 2, but where Mo cap layer 18 is replaced with a bilayer Mo cap layer 418. Mo cap layer 418 includes a first sublayer 426 disposed on metallic film layer 16 and a second sublayer 428 disposed on first sublayer 426. First sublayer 426 has a high density and therefore acts as a diffusion barrier to prevent diffusion of metal from metallic film layer 16 into CIGS layer 20. Second sublayer 428, on the other hand, has a lower density than first sublayer 426 and therefore does not substantially inhibit diffusion. In a particular embodiment, first sublayer 426 is deposited by a vacuum-based sputter deposition process at a pressure of less than 20 mTorr, preferably at less than 6 mTorr, to obtain high density, and second sublayer 428 is deposited by a vacuum-based sputter deposition process at a pressure greater than that used to deposit first sublayer 426, such that second sublayer 428 has a lower density than first sublayer 426.
Moreover, Applicant has additionally determined that it may be desirable to deposit dielectric layer 12 before metal film layer 16 and Mo cap layer 18 (or bilayer Mo cap layer 418) in embodiments including optional adhesion layer 13. In particular, adhesion layer 13 is typically at least slightly electrically conductive, and presence of adhesion layer 13 may therefore cause arcing if metallic film layer 16 and/or Mo cap layer 18 are deposited by a sputter process. Deposition of dielectric layer 12, however, insulates adhesion layer 13. Thus, deposition of dielectric layer 12 before depositing metallic film layer 16 and Mo cap layer 18 reduces the likelihood of arcing during sputter deposition of metallic film layer 16 and Mo cap layer 18.
FIG. 5 illustrates a method 500 for forming a photovoltaic element. In step 502, a first adhesion layer is disposed on a back side of a polymer substrate. In one example of step 502, adhesion layer 13 is disposed on the back side of polymer substrate 14 (FIG. 2). In step 504, a dielectric layer is disposed on the adhesion layer. In one example of step 504, dielectric layer 12 is disposed on adhesion layer 13. In step 506, a metal structure is disposed on a device side of the polymer substrate, after the step of disposing the dielectric layer, where the device side is opposite of the back side. In one example of step 506, metallic film layer 16 and Mo cap layer 18 are disposed on the device side of substrate 14, after adhesion layer 13 and dielectric layer 12 are disposed on the back side of substrate 14. In step 508, a CIGS photovoltaic structure is disposed on the metal structure. In one example of step 508, CIGS layer 20 is disposed on Mo cap layer 18.
FIG. 6 illustrates another method 600 for forming a photovoltaic element. In step 602, a dielectric layer is disposed on a back side of a polymer substrate. In one example of step 602, dielectric layer 12 is disposed on the back side of polymer substrate 14 (FIG. 2). In step 604, a metallic film layer is disposed on a device side of the polymer substrate, where the device side is opposite of the back side. In one example of step 604, metallic film layer 16 is disposed on the device side of substrate 14. In step 606, a molybdenum cap layer is disposed on the metallic film layer using a vacuum-based sputter deposition process at a pressure of less than 20 mTorr. In one example of step 606, Mo cap layer 18 is disposed on metallic film layer 16 using a vacuum-based sputter deposition process at a pressure of less than 20 mTorr. In step 608, a CIGS photovoltaic structure is disposed on the molybdenum cap layer. In one example of step 608, CIGS layer 20 is disposed on Mo cap layer 18.
While it is desirable for the backside layer to be dielectric, in some alternate embodiments, dielectric layer 12 is replaced with a backside metal layer, where the backside metal layer balances stress resulting from layers on the device side of polymer substrate 14. For example, FIG. 7 is a schematic cross-sectional view of a device 700, which is similar to device 10 of FIG. 2, but where dielectric layer 12 is replaced with a backside Mo layer 712. In certain of these embodiments, backside Mo layer 712 is deposited by a vacuum-based sputter deposition process at a pressure of less than 6 mTorr, preferably at less than 3 mTorr. Applicants have discovered that these sputter deposition conditions are particularly effective in balancing stress from layers on the device side of polymer substrate 14. Further stress matching can potentially be achieved by tuning the thickness of backside Mo layer 712. Additionally, in some embodiments, backside Mo layer 712 is about 10 percent to 30 percent oxygen in the ambient gas during the deposition process, whereas the presence of oxygen can also modify the stress. Backside Mo layer 712 could be formed of a material other than Mo without departing from the scope hereof.
Applicant has discovered that in some instances it may be beneficial for there to be no backside layer. In particular, when using dielectric substrates, such as, polyimide and polybenzobisoxazole (PBO) polyimide, that have a low coefficient of thermal expansion, it may be beneficial to use a low stress frontside contact layer. In which case, there may be little or no requirement for a backside layer. In some instances, dielectric substrates may have coefficients of thermal expansion with values ranging from 4 to 12×106/° C. Examples of low-stress frontside contacts include: Cu/Al/Mo, Cu/Mo, Al/Mo, Brass/Mo, Brass/Al/Mo.
Furthermore, Applicant has discovered that it may be particularly beneficial for metallic film layer 16 to be formed of a copper-based material, where the term “copper-based” in this document means including at least some copper. Accordingly, in some embodiment, metallic film layer 16 is pure copper, while in some other embodiments, metallic film layer 16 is an alloy including copper, such as copper-aluminum brass or a copper-manganese brass. Applicant has determined that such copper-based materials have very good adhesion to a polymer substrate, such that adhesion layer 15 is typically not required when metallic film layer 16 is formed of a copper-based material. Additionally, Applicant has observed multi-layer contacts formed of Mo cap layer 18 and metallic film layer 16 to be crack-free after high-temperature and vacuum stress testing, and also after deposition of CIGS layer 20, when metallic film layer 16 is a copper-based layer. Finally, applicant has discovered advantages with monolithic integration, or lower interconnect resistance between cells, when metallic film layer 16 is a copper-based layer.
However, Applicant has further observed that copper from metallic film layer 16 is prone to diffuse through Mo cap layer 18 after stress testing of the multi-layer back contact, or after deposition of CIGS layer 20 on the multi-layer back contact. This diffusion of copper through Mo cap layer 18 is undesirable because it may cause surface discolorations on the top surface of Mo cap layer 18 and shunting of CIGS layer 20 disposed thereon. Without being bound to any particular theory, Applicant believes that diffusion of copper through Mo cap layer 18 is due to copper diffusion through pinhole defects in Mo cap layer 18 and/or through grain boundaries of Mo cap layer 18.
Accordingly, Applicant has developed barriers to help prevent diffusion of copper from metallic film layer 16 through Mo cap layer 18. For example, Mo cap layer 18 may be relatively dense so that it acts as a diffusion barrier, as discussed above. As another embodiment, Mo cap layer 18 may be formed of molybdenum oxide (MoO) or molybdenum oxynitride (MoON) when metallic film layer 16 is copper-based, to help prevent diffusion of copper from metallic film layer 16 through Mo cap layer 18. In this document, the term “molybdenum-based” means including molybdenum, such that Mo cap layer 18 is molybdenum-based when formed of pure molybdenum, as well as molybdenum oxide or molybdenum oxynitride. Additionally, in certain embodiments, Mo cap layer 18 is a multilayer cap, where a first sublayer closest to metallic film layer 16 is formed of molybdenum oxide or molybdenum oxynitride, and second sublayer disposed on the first sublayer is formed of molybdenum. For example, FIG. 8 is a schematic cross-sectional view of a device 800, which is similar to device 10 of FIG. 2, but where Mo cap layer 18 is replaced with a bilayer Mo cap layer 818. Mo cap layer 818 includes a first sublayer 826 disposed on metallic film layer 16 and a second sublayer 828 disposed on first sublayer 826. First sublayer 826 is formed of molybdenum oxide or molybdenum oxynitride and therefore acts as a diffusion barrier to prevent diffusion of metal, such as copper, from metallic film layer 16 into CIGS layer 20. Second sublayer 828, on the other hand, may not substantially inhibit diffusion.
Additionally, Applicant has determined that it may be helpful to thermally anneal the multi-layer contact, i.e., metallic film layer 16 and Mo cap layer 18, before deposition of CIGS layer 20 when metallic film layer 16 of FIG. 8, includes aluminum along with copper, for example an Al—Cu alloy. Such thermal annealing enables aluminum of metallic film layer 16 to react with oxygen from the molybdenum-based layer to form a barrier to copper diffusion. Thus, thermally annealing the multi-layer contact before depositing CIGS layer 20 allows the aluminum to react with the molybdenum-based material before selenium from CIGS layer 20 can disrupt the reactions. In cases where Mo cap layer 18 is molybdenum oxide or molybdenum oxynitride, Mo cap layer 18 provides molybdenum and oxygen for reacting with aluminum. Accordingly, thermal annealing is performed, for example, in an inert atmosphere and in a vacuum when Mo cap layer is formed of molybdenum oxide or molybdenum oxynitride, to avoid oxidizing the multi-layer contact metal layers. On the other hand, thermal annealing is performed, for example, in an environment including oxygen, such as O2 or air, when Mo cap layer 16 does not include oxygen, to provide the necessary oxygen for aluminum from metallic film layer 16 to react with oxygen and molybdenum to form a barrier to copper diffusion.
Applicant has further determined that diffusion of copper from metallic film layer 16 through Mo cap layer 18 can be further impeded by disposing an aluminum-based barrier layer on metallic film layer 16, where the term “aluminum-based” in this document means including aluminum. For example, FIG. 9 is a schematic cross-sectional view of a device 900, which is similar to device 10 of FIG. 2, but further including an aluminum-based barrier layer 930 between metallic film layer 16 and Mo cap layer 18, where metallic film layer 16 is formed of a copper-based material, such as pure copper or brass. Aluminum-based barrier layer 930 is, for example, pure aluminum or an aluminum-copper brass. Aluminum-based barrier layer 930 helps prevent diffusion of copper from metallic film layer 16 to Mo cap layer 18. In particular, copper from metallic film layer 16 and aluminum from aluminum-based barrier layer 930 react together to form phases when subjected to high temperatures, such as during deposition of CIGS layer 20. Additionally, aluminum from aluminum-based barrier layer 930, and molybdenum from Mo cap layer 18 can form barriers during annealing. Both the formation of alloy phases and barriers help prevent diffusion of copper from metallic film layer to Mo cap layer 18. Additionally, copper in metallic film layer 16 is less easily oxidized than aluminum, and therefore, presence of copper in metallic film layer 16 may help compensate for oxidation of aluminum in aluminum-based barrier layer 930. Consequentially, device 900 may form a better via scribe (P2 interconnect) than a device having a multi-layer back contact formed solely of an aluminum layer and a molybdenum layer.
Furthermore, in some embodiments of device 900, Mo cap layer 18 is formed of molybdenum oxynitride, such that a thin aluminum-oxygen-nitrogen barrier layer may form at the interface of aluminum-based barrier layer 930 and Mo cap layer 18, thereby further helping prevent diffusion of copper from metallic film layer 16 into Mo cap layer 18. Mo cap layer 18 in device 900 is optionally replaced with a multilayer cap, where a first sublayer closest to aluminum-based barrier layer 930 is formed of molybdenum oxide or molybdenum oxynitride, and second sublayer disposed on the first sublayer is formed of molybdenum. For example, FIG. 10 is a schematic cross-sectional view of a device 1000, which is similar to device 900 of FIG. 9, but where Mo cap layer 18 is replaced with a bilayer Mo cap layer 1018. Mo cap layer 1018 includes a first sublayer 1026 disposed on aluminum-based barrier layer 930 and a second sublayer 1028 disposed on first sublayer 1026. First sublayer 1026 is formed of molybdenum oxide or molybdenum oxynitride and therefore acts as a diffusion barrier to prevent diffusion of metal, such as copper, from metallic film layer 16 into CIGS layer 20. Second sublayer 1028, on the other hand, may not substantially inhibit diffusion.
The multi-layer contact of device 900 or 1000, i.e., metallic film layer 16, aluminum-based barrier layer 930, and Mo cap layer 18 or 1018 is optionally thermally annealed before depositing CIGS layer 20. Such thermal annealing allows copper and aluminum, as well as all aluminum and molybdenum, or aluminum and molybdenum oxynitride, to react before selenium from CIGS layer 20 can disrupt the reactions. Such thermal annealing is performed, for example, in an inert atmosphere and in a vacuum to avoid oxidizing metal layers of the multi-layer contact.
Thickness of metallic film layer 16 in a height direction 932 (see FIG. 9) is typically at least 50 nanometers, and preferably greater than 100 nanometers, to minimize in-plane resistivity and P2 interconnect resistance. However, thickness of metallic film layer 16 should not exceed 500 nanometers, to reduce likelihood of metallic film layer 16 cracking. It is anticipated that thickness of aluminum-based barrier layer 930 in the height direction 932 will typically be at least 10 nanometers, to help ensure that aluminum-based barrier layer 930 forms a continuous barrier over metallic film layer 16. Additionally, it is anticipated that the combined thickness of metallic film layer 16 and aluminum-based barrier layer 930 in the height direction 932 will usually be at least 100 nanometers, to achieve low mechanical stress and high in-plane conductivity. Thickness of Mo cap layer 18 in the height 932 direction, in turn, is anticipated to be at least 20 nanometers, to screen the work function of aluminum in aluminum-based barrier layer 930. However, thickness of Mo cap layer 18 is typically less than 200 nanometers to minimize total mechanical stress of device 900.
Additionally, the combination of the back contact layer including metallic film layer 16, aluminum-based barrier layer 930, and Mo cap layer 18 or 1018 and substrate 14 in devices 900 and 1000 may enable dielectric layer 12 and optional adhesion layer 13 to be omitted. In particular, Applicant has determined that metallic film layer 16, aluminum-based barrier layer 930, and Mo cap layer 18 or 1018 may sufficiently balance stress when substrate 14 has a low coefficient of thermal expansion, preferably in the range of 4 to 12 parts per million per degrees Celsius, so that dielectric layer 12 and optional adhesion layer 13 are not needed.
Table 3 below shows experimental results of multilayer contact similar to that of FIG. 9. Copper thickness is analogous to thickness of metallic layer 16, aluminum thickness is analogous to thickness of aluminum-based barrier layer 930, and Mo thickness is analogous to thickness of Mo cap layer 18. The last row of Table 3 corresponds to a metallic layer analogous to metallic layer 16 formed of brass consisting of 84% copper and 12% aluminum.







TABLE 3







EXPERIMENTAL RESULTS OF A COPPER-ALUMINUM-


MOLYBDENUM MULTILAYER CONTACT.





















Post








Initial In-
stress In-


Cu
Al
Mo



plane
plane


thickness
Thickness
Thickness
Surface


resistance
resistance


(nm)
(nm)
(nm)
Discoloration
Adhesion
Cracking
(ohm/sq)
(ohm/sq)

















100
500
100
None
Good
None
<0.1
0.3


100
370
100
None
Good
None
<0.1
<0.1


100
184
100
None
Good
None
0.11
0.47


130
184
100
None
Good
None
0.28
0.43


250
184
100
None
Good
None
<0.1
0.6


350
184
100
None
Good
None
<0.1
0.39


428
184
100
None
Good
None
<0.1
0.2


100
92
100
None
Good
None
0.18
1.1


130
92
100
None
Good
None
0.39
1.6


350
92
100
None
Good
None
<0.1
0.36


630
92
100
None
Good
Yes*
<0.1
<0.1


 0
370
100
None
Good
None
<0.1
<0.1


 0
184
100
None
Good
Yes
0.23
0.65


 0
92
100
None
Good
Yes
0.61
0.53


84%
12%
100

Good**
No**









FIG. 11 illustrates a method for forming a photovoltaic element. In step 1102, a dielectric layer is disposed on a back side of a polymer substrate. In one example of step 1102, dielectric layer 12 is disposed on the back side of substrate 14. (See, e.g., FIG. 2). In step 1104, a copper-based layer is disposed on a device side of the polymer substrate, where the device side is opposite of the back side. In one example of step 1104, metallic film layer 16 is disposed on the device side of substrate 14, where the metallic film is formed of copper or brass. In step 1106, a molybdenum-based cap layer is disposed on the copper-based layer. In one example of step 1106, Mo cap layer 18 is disposed on metallic film layer 16. In step 1108, a CIGS photovoltaic structure is disposed on the molybdenum-based cap layer. In one example of step 1108, CIGS layer 20 is disposed on Mo cap layer 18.
Exemplary embodiments have been described herein. For example, exemplary embodiments have been described in terms of specific exemplary polymeric substrates and particular exemplary coatings or layers. It will be understood that the exemplary embodiments relate to stress balancing to provide a back contact in an improved photovoltaic device. Therefore, the present disclosure is applicable to other substrate materials and other back side coatings or layers. In fact, the disclosure may be applicable to structures without a back side coating altogether. In alternative embodiments, the disclosure may be applicable to structures with a metallic film layer (16) as the backside coating.
Combinations of Features
Various features of the present disclosure have been described above in detail. The disclosure covers any and all combinations of any number of the features described herein, unless the description specifically excludes a combination of features. The following examples illustrate some of the combinations of features contemplated and disclosed herein in accordance with this disclosure.
In any of the embodiments described in detail and/or claimed herein, the photovoltaic element can comprise a CIGS structure.
In any of the embodiments described in detail and/or claimed herein, the dielectric can comprise at least one of SiO2, Al2O3, and silicone resin.
In any of the embodiments described in detail and/or claimed herein, a thin adhesion layer can be disposed between the layer of dielectric and the back side of the polymer substrate.
In any of the embodiments described in detail and/or claimed herein, the adhesion layer can comprise at least one of Mo, Cr, and Ti.
In any of the embodiments described in detail and/or claimed herein, the metal structure can comprises a first metal layer, the first metal layer comprising at least one of aluminum, brass, bronze and copper. The metal structure is optionally disposed on the polymer substrate after the dielectric layer is disposed on the polymer substrate. The metal structure may further include an aluminum-based barrier layer disposed on the first metal layer. The aluminum-based barrier layer optionally is formed of pure aluminum or brass.
In any of the embodiments, the dielectric layer may be disposed on the backside of the substrate. The dielectric layer may be disposed directly on the substrate, or may be disposed as part of a structure. The metal structure may be disposed on the dielectric layer. In embodiments, the metal structure may be disposed without the dielectric layer.
In any of the embodiments described in detail and/or claimed herein, the metal structure can further comprise a layer of molybdenum formed over the first metal layer. The layer of molybdenum optionally has a density of at least 85% of the bulk density of molybdenum. The layer of molybdenum is optionally formed at least partially using a vacuum-based sputter deposition process at a pressure of less than 20 mTorr. The layer of molybdenum is optionally formed of molybdenum oxynitride. The layer of molybdenum optionally includes a plurality of sublayers. A sublayer closest to the first metal layer may be formed using a vacuum-based sputter deposition process at a pressure of less than 20 mTorr, and one or more sublayers further from the first metal layer may be formed using a vacuum-based sputter deposition process at a pressure of greater than that used to form the sublayer closest to the first metal layer. A sublayer closest to the first metal layer may be formed of molybdenum oxynitride, while a sublayer furthest from the one or more sublayers may be formed of molybdenum.
In any of the embodiments described in detail and/or claimed herein, the metal structure can further comprise a thin adhesion layer disposed between the first metal layer and the device side of the polymer substrate.
In any of the embodiments described in detail and/or claimed herein, the thin adhesion layer can comprise at least one of molybdenum, aluminum, titanium and chromium.
In any of the embodiments described in detail and/or claimed herein, the metal structure can further comprise a thin adhesion layer in contact with the device side of the polymer substrate.
In any of the embodiments described in detail and/or claimed herein, the metal structure can further comprise a thin adhesion layer in contact with the backside, i.e. non-device side, of the polymer substrate.
In any of the embodiments described in detail and/or claimed herein, the substrate may be a metal, a semimetal, or a semiconductor. The substrate may be in the form of a foil, or a ribbon, and is not limited in thickness nor in length nor in width.
In any of the embodiments described in detail and/or claimed herein, the thin adhesion layer can comprise at least one of molybdenum, aluminum, chromium, titanium nitride (TiN), a metal oxide, and a metal nitride.
In any of the embodiments described in detail and/or claimed herein, the dielectric layer may be replaced with a backside metal layer formed using a vacuum-based sputter deposition processes at a pressure of less than 6 mTorr. The backside metal layer can be formed of a Mo layer, where the Mo layer is deposited under conditions where the ambient gas is optionally 10% to 30% oxygen in the ambient gas during the deposition process.
While the present disclosure makes reference to exemplary embodiments, it will be understood by those of ordinary skill in the art that various changes in form and details may be made therein without departing from the spirit and scope of the present disclosure.

## Claims

1. A photovoltaic element, comprising:
a polymer substrate having opposing a device and a back side;
at least one stress-matching layer disposed on the back side of the polymer substrate, wherein said stress-matching layer comprises a dielectric layer;
a metal structure disposed on the device side of the polymer substrate, the metal structure comprising:
a copper-based layer disposed on the device side of the polymer substrate, and
a molybdenum-based cap layer disposed on the copper-based layer;

a Copper-Indium-Gallium-Selenide (CIGS) photovoltaic structure disposed on the molybdenum-based cap layer.

2. The photovoltaic element of claim 1, the molybdenum-based cap layer comprising molybdenum having a density of at least 85% of bulk density of molybdenum.

3. The photovoltaic element of claim 1, the molybdenum-based cap layer comprising molybdenum nitride, molybdenum oxide, or molybdenum oxynitride.

4. The photovoltaic element of claim 1, the molybdenum-based cap layer comprising a molybdenum nitride, a molybdenum oxide, or a molybdenum oxynitride sublayer disposed on the copper-based layer, and a molybdenum sublayer disposed on the molybdenum nitride, molybdenum oxide, or molybdenum oxynitride sublayer.

5. The photovoltaic element of claim 1, the metal structure further including an aluminum-based barrier layer disposed on the copper-based layer, such that the aluminum-based barrier layer is disposed between the copper-based layer and the molybdenum-based cap layer.

6. The photovoltaic element of claim 5, the copper-based layer having a thickness of at least 50 nanometers.

7. The photovoltaic element of claim 6, the aluminum-based barrier layer having a thickness of at least 10 nanometers.

8. The photovoltaic element of claim 5, a combined thickness of the copper-based layer and the aluminum-based barrier layer being at least 100 nanometers.

9. The photovoltaic element of claim 5, the molybdenum-based cap layer having a thickness of at least 20 nanometers but less than 200 nanometers.

10. The photovoltaic element of claim 5, the aluminum-based barrier layer comprising aluminum and copper.

11. The photovoltaic element of claim 10, the molybdenum-based cap layer comprising a molybdenum nitride, molybdenum oxide, or molybdenum oxynitride sublayer disposed on the aluminum-based barrier layer, and a molybdenum sublayer disposed on the molybdenum nitride, molybdenum oxide, or molybdenum oxynitride sublayer.

12. The photovoltaic element of claim 5, the copper-based layer being formed of copper.

13. The photovoltaic element of claim 1, the copper-based layer being formed of copper.

14. The photovoltaic element of claim 1, the copper-based layer being formed of brass.

15. The photovoltaic element of claim 14, the brass of the copper-based layer being a copper-aluminum alloy.

16. The photovoltaic element of claim 14, the brass of the copper-based layer being a copper-manganese alloy.

17. The photovoltaic element of claim 14, the molybdenum-based cap layer comprising molybdenum having a density of at least 85% of bulk density of molybdenum.

18. The photovoltaic element of claim 14, the molybdenum-based cap layer comprising molybdenum oxynitride.

19. The photovoltaic element of claim 14, molybdenum-based cap layer comprising a molybdenum oxynitride sublayer disposed on the copper-based layer, and a molybdenum sublayer disposed on the molybdenum oxynitride sublayer.

20. A method for forming a photovoltaic element, comprising:
disposing a dielectric layer on a back side of a polymer substrate;
disposing a copper-based layer on a device side of the polymer substrate, the device side being opposite of the back side;
disposing a molybdenum-based cap layer on the copper-based layer; and
disposing a CIGS photovoltaic structure on the molybdenum-based cap layer.

21. The method of claim 20, disposing the molybdenum-based cap layer comprising disposing molybdenum on the copper-based layer using a vacuum-based sputter deposition process at a pressure of less than 20 millitorr.

22. The method of claim 20, disposing the molybdenum-based cap layer comprising:
disposing a molybdenum nitride, molybdenum oxide, or molybdenum oxynitride sublayer on the copper-based layer; and
disposing a molybdenum sublayer on the molybdenum nitride, molybdenum oxide, or molybdenum oxynitride sublayer.

23. The method of claim 20, further comprising disposing an aluminum-based barrier layer on the copper-based layer before disposing the molybdenum-based cap layer, such that the aluminum-based barrier layer is disposed between the copper-based layer and the molybdenum-based cap layer.

24. The method of claim 23, disposing the aluminum-based barrier layer comprising disposing aluminum and copper on the copper-based layer.

25. The method of claim 23, disposing the molybdenum-based cap layer comprising:
disposing a molybdenum oxynitride sublayer on the aluminum-based barrier layer; and
disposing a molybdenum sublayer on the molybdenum oxynitride sublayer.

26. The method of claim 23, further comprising, before disposing the CIGS photovoltaic structure on the molybdenum-based cap layer, thermally annealing the copper-based layer, the aluminum-based barrier layer, and the molybdenum-based cap layer;
disposing the molybdenum-based cap layer comprising:
disposing a first cap sublayer comprising: molybdenum nitride, molybdenum oxide, or molybdenum oxynitride sublayer on the copper-based layer; and
disposing a molybdenum sublayer on said first cap sublayer.

27. The method of claim 26, thermally annealing being performed in an inert atmosphere and/or in a vacuum.

28. The method of claim 20, disposing the copper-based layer comprising disposing brass on the device side of the polymer substrate.

29. The method of claim 28, disposing brass on the device side of the polymer substrate comprising disposing a copper-aluminum alloy on the device side of the polymer substrate.

30. The method of claim 28, disposing brass on the device side of the polymer substrate comprising disposing a copper-manganese alloy.

31. The method of claim 28, disposing the molybdenum-based cap layer comprising disposing molybdenum on the copper-based layer using a vacuum-based sputter deposition process at a pressure of less than 20 millitorr.

32. The method of claim 28, disposing the molybdenum-based cap layer comprising disposing molybdenum and oxygen on the copper-based layer.

33. The method of claim 32, further comprising, before disposing the CIGS photovoltaic structure on the molybdenum-based cap layer, thermally annealing the copper-based layer and the molybdenum-based cap layer in an inert atmosphere and/or in a vacuum.

34. The method of claim 28, disposing the molybdenum-based cap layer comprising:
disposing a molybdenum oxynitride sublayer on the copper-based layer; and
disposing a molybdenum sublayer on the molybdenum oxynitride sublayer.

35. The method of claim 34, further comprising, before disposing the CIGS photovoltaic structure on the molybdenum-based cap layer, thermally annealing the copper-based layer and the molybdenum-based cap layer in an inert atmosphere and/or in a vacuum.

36. The method of claim 28, further comprising, before disposing the CIGS photovoltaic structure on the molybdenum-based cap layer, thermally annealing the copper-based layer and the molybdenum-based cap layer.

37. The method of claim 36, thermally annealing being performed in an atmosphere including oxygen.

38. A photovoltaic element, comprising:
a polymer substrate having opposing a device and a back side;
a metal structure disposed on the device side of the polymer substrate, the metal structure comprising:
a copper-based layer disposed on the device side of the polymer substrate, and
a molybdenum-based cap layer disposed on the copper-based layer;

a Copper-Indium-Gallium-Selenide (CIGS) photovoltaic structure disposed on the molybdenum-based cap layer.

39. The photovoltaic element of claim 38, further comprising:
at least one stress-matching layer disposed on the back side of the polymer substrate.

40. The photovoltaic element of claim 39, wherein said stress-matching layer comprises a dielectric layer.

41. A method for forming a photovoltaic element, comprising:
disposing a copper-based layer on a device side of the polymer substrate, the device side being opposite of a back side;
disposing a molybdenum-based cap layer on the copper-based layer; and
disposing a CIGS photovoltaic structure on the molybdenum-based cap layer.

42. The method of claim 41, further comprising:
disposing at least one stress-matching layer disposed on the back side of the polymer substrate.

43. The photovoltaic element of claim 42, wherein said stress-matching layer comprises a dielectric layer.

44. A method for forming a photovoltaic element, comprising:
disposing an aluminum-based layer on a device side of a flexible substrate, the device side being opposite of the back side;
disposing a molybdenum-based cap layer on the aluminum-based layer, disposing the molybdenum-based cap layer comprising:
disposing a molybdenum nitride, molybdenum oxide, or molybdenum oxynitride sublayer on the aluminum-based layer; and
disposing a Copper-Indium-Gallium-Selenide (CIGS) photovoltaic structure on the molybdenum-based cap layer.

45. The method of claim 44, disposing the molybdenum-based cap layer comprising disposing molybdenum on the aluminum-based layer using a vacuum-based sputter deposition process at a pressure of less than 20 millitorr.

46. The method of claim 44, further comprising disposing a molybdenum sublayer on the molybdenum nitride, molybdenum oxide, or molybdenum oxynitride sublayer.

47. The method of claim 44, further comprising, before disposing the CIGS photovoltaic structure on the molybdenum-based cap layer, thermally annealing the aluminum-based layer and the molybdenum-based cap layer.

48. The method of claim 47, thermally annealing being performed in an inert atmosphere and/or in a vacuum.

49. The method of claim 47, thermally annealing being performed in an atmosphere including oxygen.

50. The method of claim 44, further comprising:
disposing at least one stress-matching layer on the back side of the flexible substrate.

51. The method of claim 50, wherein said stress-matching layer comprises a dielectric layer.

52. The method of claim 46, the molybdenum sublayer comprising molybdenum having a density of at least 85% of bulk density of molybdenum.

53. A photovoltaic element, comprising:
a polymer substrate having opposing a device and a back side;
a metal structure disposed on the device side of the polymer substrate, the metal structure comprising:
an aluminum-based layer disposed on the device side of the polymer substrate, and
a molybdenum-based cap layer disposed on the aluminum-based layer, the molybdenum-based cap layer comprising:
a molybdenum nitride, molybdenum oxide, or molybdenum oxynitride sublayer on the aluminum-based layer; and
a Copper-Indium-Gallium-Selenide (CIGS) photovoltaic structure disposed on the molybdenum-based cap layer.

54. The photovoltaic element of claim 53, further comprising:
at least one stress-matching layer disposed on the back side of the polymer substrate.

55. The photovoltaic element of claim 54, wherein said stress-matching layer comprises a dielectric layer.

56. The photovoltaic element of claim 53, further comprising a molybdenum sublayer disposed on the molybdenum nitride, molybdenum oxide, or molybdenum oxynitride sublayer.

57. The photovoltaic element of claim 56, the molybdenum sublayer comprising molybdenum having a density of at least 85% of bulk density of molybdenum.

58. The photovoltaic element of claim 53, the aluminum-based layer having a thickness of at least 50 nanometers.

59. The photovoltaic element of claim 53, the molybdenum-based cap layer having a thickness of at least 20 nanometers but less than 200 nanometers.

60. The photovoltaic element of claim 53, a combined thickness of the aluminum-based layer and the molybdenum-based cap layer being at least 70 nanometers but less than 700 nanometers.

61. The photovoltaic element of claim 57, the aluminum-based layer comprising aluminum and copper.

62. The photovoltaic element of claim 61, a combined thickness of the aluminum-based layer, the molybdenum-based cap layer, and the molybdenum sublayer being at least 70 nanometers but less than 700 nanometers.