# Patent

## Title
Structure for interconnect structure containing various capping materials for electrical fuse and other related applications

## Abstract

A design structure is provided for interconnect structures containing various capping materials for electrical fuses and other related applications. The structure includes a first interconnect structure having a first interfacial structure and a second interconnect structure adjacent to the first structure. The second interconnect structure has second interfacial structure different from the first interfacial structure.

## Background
CROSS-REFERENCE TO RELATED APPLICATIONS
This application is related to U.S. Ser. No. 12/118,161 filed on the same day and currently pending.
FIELD OF THE INVENTION
The invention relates to a design structure, and more particularly, to a design structure for interconnect structures containing various capping materials for electrical fuses and other related applications.
BACKGROUND
A fuse is a structure that is blown in accordance with a suitable electrical current. For example, an electrical current is provided through the fuse to eventually provide an open circuit condition. In integrated circuitry memory devices, fuses can be used for activating redundancy in memory chips and for programming functions and codes in logic chips. Specifically, dynamic random access memory (DRAM) and static random access memory (SRAM) employ fuses for such purposes.
Electronic fuses can also be used to prevent reduction of yield, which may be caused by random defects, generated in the manufacturing process. Moreover, fuse links provide for voltage options, packaging pin out options, or any other option desired by the manufacturer to be employed prior to the final processing. This helps increase yield and makes it easier to use one basic design for several different end products.
Some electrically blowable fuses take advantage of the electromigration (EM) effect to open an electrical connection. For example, EM is the transport of material caused by the gradual movement of ions in a conductor due to the momentum transfer between conducting electrons and diffusing metal atoms. In electrically blowable fuses that take advantage of EM effect, such transport of material caused by the gradual movement of ions can open the electrical connection.
However, in a typical e-fuse the EM effect causes undesirable hillocks. More specifically, known e-fuses comprise a two-dimensional dog-bone shape having a small cross-sectional area between large cathode and anode pads. During programming, voids form at the center fuse element due to high current density, and eventually create an electrically open circuit. However, the electromigration causes the conductive material to pile-up and form hillocks at the anode end of the fuse element. Hillock formation is an undesirable effect that has not been exploited for any useful purpose.
Accordingly, there exists a need in the art to overcome the deficiencies and limitations described hereinabove.
SUMMARY
In a first aspect of the invention, a structure comprises a first interconnect structure having a first interfacial structure and a second interconnect structure adjacent to the first structure. The second interconnect structure has second interfacial structure different from the first interfacial structure.
In another aspect of the invention, a structure comprises a wiring interconnect structure having an interface comprising a metal wiring layer and a capping layer of a first material type. The structure further comprises an electronic fuse interconnect structure having an interface comprising a metal wiring layer and a capping layer of a second material type.
In yet another aspect of the invention, a structure comprises a first macro having a metal wiring layer on a first level electrically connected to a metal wiring layer on a second layer and a capping layer over the metal wiring layer on the second layer which has a first electromigration (EM) resistance. The structure further comprises a second macro adjacent the first macro. The second macro has a metal wiring layer on the first level electrically connected to a metal wiring layer on the second layer and a capping layer over the metal wiring layer on the second layer which has a second electromigration (EM) resistance different from the first electromigration (EM) resistance.
In still a further aspect of the invention, an interconnect structure comprises a first macro having a first e-fuse programmability comprising an upper wiring layer capped by a capping material. The interconnect structure further comprises a second macro having a second e-fuse programmability comprising an upper wiring layer capped by a capping material having interfacial properties which are different than that of the first macro.
In a further aspect of the invention, a design structure for e-fuse and interconnect structures is embodied in a machine-readable medium for designing, manufacturing, or testing an integrated circuit. The design structure comprises a first interconnect structure having a first interfacial structure and a second interconnect structure adjacent to the first structure. The second interconnect structure has second interfacial structure different from the first interfacial structure.



BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWINGS
The present invention is described in the detailed description which follows, in reference to the noted plurality of drawings by way of non-limiting examples of exemplary embodiments of the present invention.
FIG. 1 shows the formation of void nucleation sites;
FIG. 2 shows a graph of different void growth rates for cap interface materials in accordance with the invention;
FIG. 3 shows a beginning structure and respective processing steps in accordance with the invention;
FIGS. 4-6 show intermediate structures and respective processing steps in accordance with the invention;
FIG. 7 shows alternative final structures and respective processing steps in accordance with the invention;
FIG. 8 shows alternative final structures and respective processing steps in accordance with the invention;
FIG. 9 shows alternative final structures and respective processing steps in accordance with the invention;
FIG. 10 shows a final structure with the formation of a void nucleation site in accordance with the invention; and
FIG. 11 is a flow diagram of a design process used in semiconductor design, manufacture, and/or test.



DETAILED DESCRIPTION
The invention relates to a design structure, and more particularly, to a design structure for interconnect structures containing various capping materials for electrical fuses (e-fuses) and other related applications. More specifically, the present invention teaches interconnect structures, which may be implemented as either normal interconnects or e-fuses. The structures include various capping layer materials at an interface with a metal wiring layer to provide different interfacial properties, e.g., EM resistance.
Advantageously, the formation of the interconnect structure and e-fuses of the present invention can be implemented in FEOL, BEOL, and FBEOL, and are compatible with current process flows. The present invention thus allows the building of e-fuses during normal interconnect process flows, advantageously reducing processing costs for manufacturing e-fuses which are normally fabricated in different process flows. Also, in accordance with different embodiments, depending on the materials used herein (as discussed in detail below) the e-fuse can be programmed to blow at different current levels. EM effects in the e-fuses of the present invention will not cause undesirable hillocks at the anode end of the fuse element.
By way of example, FIG. 1 shows an EM failure mode in an interconnect structure (or an e-fuse in accordance with the invention). Generally, three major diffusion paths have been identified in the EM failure mechanism. These failure mechanisms can be, for example,

    
    
        Cu/capping layer interface;
        Cu grain boundary; and
        Cu/barrier (Ta) interface.

The dominant diffusion path depends on the process. For example, in certain products/processes, the Cu/capping layer interface is the most critical interface controlling the EM performance.

    
    


More specifically, multilayer electronic components comprise multiple layers of a dielectric material having metallization on each layer in the form of vias, pads, straps connecting pads to vias and wiring. Vias or other openings in the dielectric layer extend from one layer to another layer. These openings are filled with a conductive material and electrically connect the metallization on one layer to the metallization on another layer and provide for the high-density electronic components devices now used in industry. Metallization metal may be formed using a filling technique such as electroplating, electroless plating, chemical vapor deposition, physical vapor deposition or a combination of methods. The metal wiring is capped with a dielectric capping layer, which may be, for example, nitride.
As shown in FIG. 1, at t=0, the electrons are shown to be moving through the wiring pattern, However, as time passes, voids (void nucleation sites) begin to form at the interface between the upper wiring layer and the dielectric capping layer. At t=3, for example, the void becomes so large that it effectively opens the circuit thus resulting in a failure of the wiring layer. In the case of a fuse, this open circuit is a blown fuse.
FIG. 2 shows a graph of different void growth rates for cap interface materials used in accordance with the invention. More specifically, FIG. 2 shows a graph of different void growth rates over EM stress time. After extensive experimentation, it has been found that different void growth rates are provided with different Cu/cap interface materials. As important, it was found that EM resistance behaves differently between different capping materials.
In particular, as shown in FIG. 2, SiN (Si3N4) shows the fastest void growth rate over EM stress time. Ta and Ru show a slower void growth rate over EM stress time, with any combination of Co(W, P, B) showing the slowest void growth rate over EM stress time. Although Ta and Ru and any combination of Co (W, P, B) are shown grouped together, respectively, those of skill in the art should be understood that these materials will also have certain variations in void growth rate.
With the data shown in FIG. 2, in a regular interconnect, it is possible to select a good Cu/capping layer interface (e.g., SiN) to prevent the formation of void nucleation sites. However, it is also desirable to select poor interface materials (e.g., Ta, Ru and any combination of Co (W, P, B)) for e-fuse applications. As such, in accordance with the invention, by creating various interfaces which result in different EM resistance during same process flows, it is now possible to fabricate an e-fuse application using process flows of an interconnect structure. This now being possible, the invention contemplates programmable e-fuses using different capping materials and, in embodiments, by damaging existing capping materials, any of which exhibit differences in EM resistance when used as a Cu capping layer. Also, the present invention should not be limited to the above materials, in that other materials, e.g., Rh and Pt, will provide different void growth rates for cap interface materials in accordance with the invention.
Methods in Accordance with the Invention
FIG. 3 shows a beginning structure and respective processing steps in accordance with the invention. In particular, FIG. 3 shows identical macros, Macro A and Macro B. The Macro A and Macro B will eventually be formed into two or more different structures having different programming efficiencies, implemented as e-fuses or wiring interconnect structures, for example.
Macro A and Macro B include a dielectric layer 101. The dielectric layer 101 may be, for example, SiO2, Si3N4, SiCOH, SiLK, JSR, or porous dielectrics. The dielectric layer 101 could be any interconnect layer in the structure. In conventional lithographic and etching processes, a trench is formed in the dielectric layer 101. Materials are then deposited in the trench in conventional deposition processes to form an underlying metal interconnect material 102. For example, a barrier/liner material 111 such as TaN is deposited in the trench. A barrier/liner material 112, e.g., Ta is deposited over the barrier/liner material 111. The underlying metal interconnect material 102 is deposited over the barrier/liner material 112. The underlying metal interconnect material 102 may be, for example, Cu, Al, Al(Cu) or W to name a few.
Still referring to FIG. 3, a dielectric capping layer 103 is deposited over the structure, in a conventional deposition process such as, for example, chemical vapor deposition. The dielectric capping layer 103 may be, for example, Si3N4, SiC, SiC(N,H) or other known capping materials. A dielectric layer 104 is deposited over the capping layer 103 in a conventional deposition process. The dielectric layer 104 may be, for example, SiO2, Si3N4, SiCOH, SiLK, JSR, or porous dielectrics. A hard mask 105 is then deposited over the dielectric layer 104. The hard mask 105 may be, for example, SiO2, Si3N4.
Via 108 and trenches 107 and 110 are formed in the structure in accordance with conventional trench or via formation processes. For example, a conventional dual damascene process and a single damascene process can be used to form the via 108 and trenches 107 and 110 (e.g.,features). More specifically, a conventional lithographic and etching (e.g., RIE) process can be used to form the via 108 and a second conventional lithographic and etching process can be used to form the trenches 107 and 110. The formation of via 108 exposes the underlying metal interconnect material 102.
FIGS. 4-6 show intermediate structures and respective processing steps in accordance with the invention. In FIG. 4, for example, a liner 201 is formed on the sidewalls of the via 108 and the trenches 107, 110. The liner 201 may be, for example, Ta(N), Ti(N), RuTa(N) or IrTa(N). In further processing steps, copper material is deposited in the via 108 and trenches 107, 110 and over the liner 201 to form a metal interconnect 202. A conventional chemical mechanical polishing step may be provided to remove any extra conducting material from the metal interconnect 202, e.g., polish the structure.
FIG. 5 shows a dielectric capping layer deposition process in accordance with the invention. In this processing step, a dielectric capping layer 301 is deposited over the structures (Macro A and Macro B) of FIG. 4. The dielectric capping layer 301 may be, for example, Si3N4 or SiC(N,H). In embodiments, the dielectric capping layer 301 is about 100 Á to 800 Á.
FIG. 6 shows alternate processing steps for Marco B. In particular, in Macro B, the dielectric capping layer 301 can be partially or completely removed using conventional etching processes. In the partial removal scenario, the dielectric capping layer 301 preferably is removed over the metal interconnect 202, remaining over the dielectric layer 104. In embodiments, Macro A remains protected by a mask during the etching of the dielectric capping layer 301 on Macro B.
FIG. 7 shows a selective metal cap deposition on the alternative Macro B structures of FIG. 6. During this process, Macro A remains masked. The selective metal cap deposition 501 of the alternative Macro B structures include, for example, Co(W,P,B), Ru, Ir, Rh or Pt. The metal cap deposition 501 may be about 5 A to 500 A. The metal cap deposition process could be through CVD, ALD, electro plating, and electroless plating process. Those of skill in the art will understand that the metal cap deposition 501 may be other materials, depending on the desired programming efficiencies of the e-fuse. In embodiments, if the metal cap deposition is not selective, it is possible to provide a CMP touch up process to remove any unwanted deposition metals 501.
FIG. 8 shows a third macro, Macro C, provided in accordance with the invention. Macro C can be formed simultaneously with Marcos A and B in accordance with the processing steps of FIGS. 3-6. In this embodiment, a metal cap deposition material 601 is deposited over Macro C, while Macros A and B remain protected by a mask. The cap deposition material 601 on Macro C is different than the metal cap deposition material 501 (described with reference to FIG. 7) on Macro B. By way of one NON-LIMITING example, the metal cap deposition material 501 is Co and the metal cap deposition material 601 is Ru; although other combinations of materials (and/or combinations of partial or complete openings) are also contemplated by the invention.
In the illustrative embodiment shown in FIG. 8, Macro B has a greater EM resistance than Macro C and Macro A. Macro C has a greater EM resistance than Macro A. As such, Macro A has greater fuse efficiency than Macro B and Macro C. Also, Macro B has greater fuse efficiency than Macro C.
As thus shown in the exemplary representation of FIG. 8, different cap materials, i.e., different Cu/cap interfaces, results in different EM resistance, i.e. different EM life time. This being the case, Macros with a poor interface can be used as an e-fuse, and Macros with a good interface can be used as the normal interconnect. Also, using any combination of Macros (and combinations of materials and openings), it is possible to have different e-fuses (with different programmability) made on the same device using substantially the same processing. In this way, the multi-interface structure may provide circuit programming.
FIG. 9 shows a second embodiment in accordance with the invention. In this embodiment, Macros A, B and C have the dielectric capping layer 301 is made of the same material. However, Macros B and C are subjected to different amount/degree of treatments, either prior or post the dielectric capping layer 301 deposition, to degrade the interfacial property between the metal and the dielectric cap layer, e.g., adhesion. The treatment includes radiation sources such as e-beam, ultraviolet light, visible light, or laser light for altering the interfacial property discussed above. FIG. 9 can equally be representative of two (or more) Macros, with different treatments or in combination with different treatments and materials as described already herein.
In FIG. 9, area 701 on Macro B is provided with minor damage; whereas, Macro C has serious damage 702. In this illustrative embodiment, Macro A has a greater EM resistance than Macro B and Macro C. Macro B has a greater EM resistance than Macro C. As such, Macro C has greater fuse efficiency than Macro B and Macro A. Also, Macro B has greater fuse efficiency than Macro A.
Again, as in the previous embodiments, the advantage of the embodiment of FIG. 9 is to create different Cu/cap interfaces, which results in different EM resistance, i.e., different EM life time. The Macros with poor interface properties can be used as e-fuses, while the Macros with good interface properties can be used as normal interconnects. Also, this multi-interface structure can have potential on circuit programming.
FIG. 10 shows formation of void nucleation sites in structures fabricated in accordance with the invention. More particular, FIG. 10 illustratively shows void formation in the embodiment of FIG. 9. More specifically, void formation (i.e., an open circuit) due to EM effects is shown in the serious damage area 702 of Macro C. The void formation will effectively blow the fuse.
Design Structure
FIG. 11 shows a block diagram of an exemplary design flow 900 used for example, in semiconductor design, manufacturing, and/or test. Design flow 900 may vary depending on the type of IC being designed. For example, a design flow 900 for building an application specific IC (ASIC) may differ from a design flow 900 for designing a standard component or from a design flow 900 for instantiating the design into a programmable array, for example a programmable gate array (PGA) or a field programmable gate array (FPGA) offered by Altera® Inc. or Xilinx® Inc. Design structure 920 is preferably an input to a design process 910 and may come from an IP provider, a core developer, or other design company or may be generated by the operator of the design flow, or from other sources. Design structure 920 comprises an embodiment of the invention as shown in FIGS. 7-9 in the form of schematics or HDL, a hardware-description language (e.g., Verilog, VHDL, C, etc.). Design structure 920 may be contained on one or more machine-readable media. For example, design structure 920 may be a text file or a graphical representation of an embodiment of the invention as shown in FIGS. 7-9. Design process 910 preferably synthesizes (or translates) embodiments of the invention as shown in FIGS. FIGS. 7-9 into a netlist 980, where netlist 980 is, for example, a list of wires, transistors, logic gates, control circuits, I/O, models, etc. that describes the connections to other elements and circuits in an integrated circuit design and recorded on at least one of machine readable media. For example, the medium may be a CD, a compact flash, other flash memory, a packet of data to be sent via the Internet, or other networking suitable means. The synthesis may be an iterative process in which netlist 980 is resynthesized one or more times depending on design specifications and parameters for the circuit.
Design process 910 may include using a variety of inputs; for example, inputs from library elements 930 which may house a set of commonly used elements, circuits, and devices, including models, layouts, and symbolic representations, for a given manufacturing technology (e.g., different technology nodes, 32 nm, 45 nm, 90 nm, etc.), design specifications 940, characterization data 950, verification data 960, design rules 970, and test data files 985 (which may include test patterns and other testing information). Design process 910 may further include, for example, standard circuit design processes such as timing analysis, verification, design rule checking, place and route operations, etc. One of ordinary skill in the art of integrated circuit design can appreciate the extent of possible electronic design automation tools and applications used in design process 910 without deviating from the scope and spirit of the invention. The design structure of the invention is not limited to any specific design flow.
Design process 910 preferably translates an embodiment of the invention as shown in FIGS. 7-9, along with any additional integrated circuit design or data (if applicable), into a second design structure 990. Design structure 990 resides on a storage medium in a data format used for the exchange of layout data of integrated circuits and/or symbolic data format (e.g. information stored in a GDSII (GDS2), GL1, OASIS, map files, or any other suitable format for storing such design structures). Design structure 990 may comprise information such as, for example, symbolic data, map files, test data files, design content files, manufacturing data, layout parameters, wires, levels of metal, vias, shapes, data for routing through the manufacturing line, and any other data required by a semiconductor manufacturer to produce embodiments of the invention as shown in FIGS. 7-9. Design structure 990 may then proceed to a stage 995 where, for example, design structure 990: proceeds to tape-out, is released to manufacturing, is released to a mask house, is sent to another design house, is sent back to the customer, etc.
While the invention has been described in terms of embodiments, those of skill in the art will recognize that the invention can be practiced with modifications and in the spirit and scope of the appended claims.

## Claims

1. A structure, comprising:
a first interconnect structure having a first interfacial structure connecting to an underlying interconnect material; and
a second interconnect structure adjacent to the first interconnect structure and having a second interfacial structure, wherein the second interfacial structure comprises a metal layer on a conducting material that is within a feature, and the second interfacial structure is different from the first interfacial structure.

2. The structure of claim 1, wherein the first interconnect structure is a wiring interconnect structure and the second interconnect structure is an e-fuse.

3. The structure of claim 2, wherein the first interfacial structure has a greater electromigration (EM) resistance than the second interfacial structure.

4. The structure of claim 1, further comprising a third interconnect structure having a third interfacial structure, different from the first and second interfacial structure.

5. The structure of claim 1, wherein the first interfacial structure includes a liner and a metal layer embedded in a dielectric material.

6. A structure, comprising:
a first interconnect structure having a first interfacial structure; and
a second interconnect structure adjacent to the first interconnect structure and having a second interfacial structure different from the first interfacial structure, wherein
the first interconnect structure is a wiring interconnect structure and the second interconnect structure is an e-fuse, and
the first interfacial structure includes a metal layer and a capping layer, the capping layer comprising SiN, and the second interfacial structure includes a metal layer and a capping layer, the capping layer comprising one of: Co(W,P,B), Ru, Ir, Rh and Pt.

7. A structure, comprising:
a first interconnect structure having a first interfacial structure; and
a second interconnect structure adjacent to the first interconnect structure and having a second interfacial structure different from the first interfacial structure, wherein
the first interconnect structure is a wiring interconnect structure and the second interconnect structure is an e-fuse, and
the second interfacial structure includes a same material as the first interfacial structure with degraded interfacial properties between a metal layer and capping layer.

8. The structure of claim 7, wherein the degraded interfacial properties is a treatment from one of radiation sources and laser light.

9. A structure, comprising:
a first interconnect structure having a first interfacial structure connecting to an underlying interconnect material; and
a second interconnect structure adjacent to the first interconnect structure and having a second interfacial structure, the second interfacial structure comprising a metal layer, the second interfacial structure is different from the first interfacial structure,
wherein the second interfacial structure includes the metal layer and a capping layer different from a capping layer of the first interfacial structure.

10. A structure, comprising:
a first interconnect structure having a first interfacial structure connecting to an underlying interconnect material; and
a second interconnect structure adjacent to the first interconnect structure and having a second interfacial structure, the second interfacial structure comprising a metal layer, the second interfacial structure is different from the first interfacial structure,
wherein the second-interfacial structure has greater fuse efficiency than the first interfacial structure.

11. The structure of claim 10, wherein the second interfacial structure is configured to provide void formation due to EM effects.

12. A structure, comprising:
a first interconnect structure having a first interfacial structure connecting to an underlying interconnect material; and
a second interconnect structure adjacent to the first interconnect structure and having a second interfacial structure, the second interfacial structure comprising a metal layer, the second interfacial structure is different from the first interfacial structure,
wherein the first interconnect structure having a first interfacial structure, the first interfacial structure includes a layer of SiN which is deposited over a dielectric material and a metal layer embedded in the dielectric material.

13. The structure of claim 12, wherein the second interconnect structure includes the metal layer which is a conducting material, and a metal cap overlying the conducting metal and surrounded by SiN material deposited on a dielectric material.

14. A structure, comprising:
a first interconnect structure having a first interfacial structure connecting to an underlying interconnect material;
a second interconnect structure adjacent to the first interconnect structure and having a second interfacial structure, the second interfacial structure comprising a metal layer, the second interfacial structure is different from the first interfacial structure; and
a third interconnect structure having a third interfacial structure or metal deposited directly on a conducting material, the metal of the third interfacial structure is different than the metal of the second interfacial structure.

15. A structure, comprising:
a first interconnect structure having a first interfacial structure connecting to an underlying interconnect material;
a second interconnect structure adjacent to the first interconnect structure and having a second interfacial structure, the second interfacial structure comprising a metal layer, the second interfacial structure is different from the first interfacial structure; and
a third interconnect structure having a third interfacial structure which includes damage that is different than damage of the second interfacial structure.

16. The structure of claim 15, wherein the metal of the second interfacial structure and metal formed on the third interfacial structure overly the damage.

17. A structure, comprising:
a first macro having a metal wiring layer on a first level electrically connected to a metal wiring layer on a second layer and a capping layer over the metal wiring layer on the second layer which has a first electromigration (EM) resistance; and
a second macro adjacent the first macro, the second macro having a metal wiring layer on the first level electrically connected to a metal wiring layer on the second layer, and a capping layer over the metal wiring layer on the second layer which has a second electromigration (EM) resistance different from the first electromigration (EM) resistance.