# Patent

## Title
Elastic boundary wave substrate and elastic boundary wave functional element using the substrate

## Abstract

The structure of the patent is a substrate wherein a metal electrode, a dielectric thin film, and a further dielectric thin film are adhered onto a piezoelectric substrate. A substrate wherein elastic wave energy is confined in the piezoelectric substrate can be obtained. In particular, when a SiO2 thin film and an AlN thin film are used as thin films 4 and 5, respectively, a substrate excellent in an electromechanical coupling coefficient (k2) and a temperature characteristic of frequency can be yielded by making the film thicknesses of electrodes 2 and 3 and those of the thin films 4 and 5 into optimal values.

## Background
BACKGROUND OF THE INVENTION
1. Technical Field
The present invention relates to an elastic boundary wave substrate on which energy is concentrated into a substrate surface thereof and an electrode section, so as to be propagated, and an elastic boundary wave functional element using the substrate.
2. Background Art
Elastic surface wave filters and elastic surface wave functional elements each using an elastic surface wave converter wherein an interdigital electrode is set on a piezoelectric substrate are widely used as intermediate frequency band filters for television or filters for mobile communication. In these filters, an elastic surface wave is used; thus, their surface for propagating and receiving the elastic surface wave and their propagation path surface need to be made free. Thus, these filters are each required to be packaged. In the meantime, by use of an elastic boundary wave, the energy of which is confined in a substrate, a functional element for which no package is necessary can be attained. A first research article wherein an elastic boundary wave is analyzed is R. Stoneley: R. Soc. Proc. London Ser. A., 106 (1924) 416. An article on a combination of a piezoelectric substrate with a thin film is K. Yamanouchi, K. Iwahashi and K. Shibayama, “Piezoelectric Boundary Waves along the Interface between SiO2 and LiTaO3”, IEEE Transactions Sonics and Ultrasonics, Vol. SU-25, No. 6, 1978, pp. 384-389. According to this article, only a monolayered thin film is used so that conditions for trapping a boundary wave into a boundary are strict. As a result, the combination has not been put into practical use.
The present patent has been made in order to overcome these drawbacks.
SUMMARY OF THE INVENTION
For any filter using an elastic surface wave, a package is required for putting its propagating and receiving electrode section and its propagation path into the condition that their surfaces are made free. Thus, there is caused a drawback that the element becomes somewhat large. An object of the patent is to provide a small-sized element by confining elastic wave energy into a substrate.
In the present patent, a substrate is formed so as to have a structure wherein a metal electrode, a dielectric thin film and a further dielectric thin film are adhered onto a piezoelectric substrate. An object of the patent is to obtain, in such a manner, a substrate which neither radiates energy to its piezoelectric substrate nor produces displacement in its thin film surface, and which gives a large electromechanical coupling coefficient and an excellent temperature characteristic of frequency (TCF).



BRIEF DESCRIPTION OF THE DRAWINGS
The present invention will become readily understood from the following description of preferred embodiments thereof made with reference to the accompanying drawings, in which like parts are designated by like reference numeral and in which:
FIG. 1 is a sectional view of an elastic boundary wave substrate having a metal thin film 2;
FIG. 2 is a sectional view of an elastic boundary wave substrate having an interdigital electrode 3;
FIG. 3 shows displacement distributions of a substrate having an AlN/SiO2/Al/Y—X LiNbO3 structure, wherein SH, SV and P represent the displacement parallel to its plane, the displacement perpendicular thereto, and the displacement in the propagation direction, respectively;
FIG. 4 shows displacement distributions of a substrate having an AlN/SiO2/Cu/128° Y—X LiNbO3 structure;
FIG. 5 shows displacement distributions of a substrate having an AlN/SiO2/Cu/36° Y—X LiTaO3 structure;
FIG. 6 shows each existing area of an elastic boundary wave relative to the thickness of an electrode film and the thickness of a SiO2 film, wherein the directions of arrows each show a area where the elastic boundary wave exists.
FIG. 7 shows each temperature characteristic of frequency of an elastic boundary wave relative to the thickness of a SiO2 film;
FIG. 8 shows, in an AlN/SiO2/Al/Y—X LiNbO3 substrate, each change in the propagation velocity relative to the ratio (H/λ) of AlN film thickness and λ when HAl/λ is 0.05;
FIG. 9 shows, in an AlN/SiO2/Cu/Y—X LiNbO3 substrate, each change in the propagation velocity relative to the ratio (H/λ) of AlN film thickness and λ when HCu/λ is 0.04;
FIG. 10 shows, in an AlN/SiO2/Cu/10° Y—X LiNbO3 substrate, each change in the propagation velocity relative to the ratio (H/λ) of AlN film thickness and λ when HCu/λ is 0.03;
FIG. 11 shows, in an AlN/SiO2/Cu/Y—X LiNbO3 substrate, each minimum value of the film thickness of the topmost film AlN relative to the SiO2 thin film in order to obtain a boundary wave in the substrate;
FIG. 12 shows, in an AlN/SiO2/Cu/36° Y—X LiTaO3 substrate, a minimum value of the film thickness of the topmost film AlN relative to the SiO2 thin film in order to obtain a boundary wave in the substrate;
FIG. 13 is a chart showing a change in the resonance frequency of an AlN/SiO2/Cu electrode/Y—X LiNbO3 substrate resonator relative to the thickness of the AlN film;
FIG. 14 shows the admittance characteristic of the AlN/SiO2/Cu electrode/Y—X LiNbO3 substrate resonator;
FIG. 15 shows each admittance characteristic of an AlN/SiO2/Cu electrode 36° Y—X LiTaO3 substrate resonator;
FIG. 16 shows the unidirectional filter characteristic of an AlN/SiO2/Te/Cu electrode/Y—X LiNbO3 substrate;
FIG. 17 shows each temperature characteristic of frequency of an AlN/SiO2/AlN/electrode/Y—X LiNbO3 substrate;
FIG. 18 shows simulation results of the electromechanical coupling coefficient k2 and the temperature characteristic of frequency (TCF) when H2, H3/λ=0.02, H5/λ=2.0 and H4 is changed in AlN/SiO2/Cu/Y—X LiNbO3;
FIG. 19 shows simulation results of the electromechanical coupling coefficient k2 and the temperature characteristic of frequency (TCF) when H2, H3/λ=0.05, H5/λ=2.0 and H4 is changed in AlN/SiO2/Cu/128° Y—X LiNbO3;
FIG. 20 shows simulation results of the electromechanical coupling coefficient k2 and the temperature characteristic of frequency (TCF) when H2, H3/λ=0.05, H5/λ=2.0 and H4 is changed in AlN/SiO2/Cu/36° Y—X LiTaO3; and
FIG. 21 shows a sectional view of an elastic boundary wave substrate having a metal thin film 2, thin film 6, and thin film 7.



DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
Example 1
As illustrated in FIGS. 1 and 2, example 1 is an elastic boundary wave substrate, comprising a piezoelectric or electrostrictive substrate 1, or a piezoelectric thin-film substrate 1 wherein a piezoelectric thin film is adhered onto a substrate as illustrated in FIG. 1 or 2, a metal film 2 or an interdigital electrode 3 adhered onto the substrate 1 as illustrated in FIG. 3, a dielectric thin film or piezoelectric thin film 4 thereon, and a dielectric thin film 5, piezoelectric thin film 5 or metal thin film 5 adhered thereonto, and having a structure wherein elastic wave energy is concentrated into the vicinity of the boundary surface between the surface of the substrate 1 and the metal film 2 or the interdigital electrode 3, energy radiation in the thickness direction of the substrate is zero, and the energy (displacement) of the surface of the thin film 5 is zero, a structure wherein the energy of a part of the whole is radiated to the substrate, or a structure wherein a part of the energy (displacement) of the whole is present also in the surface of the thin film 5; and a functional element using the elastic boundary wave substrate.
Example 2
Example 2 is the elastic boundary wave substrate, and the functional element using the elastic boundary wave substrate according to claim 1, having a structure wherein the energy radiation in the thickness direction of the substrate is 1⁄8 or less of the energy of the whole, and the energy of the surface of the thin film 5 is 1⁄8 or less of the energy of the whole.
Example 3
Example 3 is the elastic boundary wave substrate, and the functional element using the elastic boundary wave substrate according to claim 1 or 2, having a structure wherein the piezoelectric or electrostrictive substrate or piezoelectric thin-film substrate of the substrate 1 is 120-136° rotated Y—X propagation LINbO3, −10 to 90° rotated Y—X propagation LiNbO3, Y—Z LiNbO3, 25-55° rotated Y—X propagation LiTaO3, X-112° Y LiTaO3, 0-90° rotated Y—X propagation KNbO3, langasite, lithium tetraborate, quartz crystal, BGO, BSO, ZnO/substrate, AlN/substrate, AlN/Si, or ZnO/Si, and is a substrate having a propagation axis in the range of ±50° in connection with the propagation direction of the substrate, the dielectric thin film 4 or piezoelectric thin film 4 is a TeO2 thin film and a TexOy thin film, a SiO2 thin film and a SixOy thin film, a HfO2 thin film, a BGO thin film, a BGS thin film, a LINbO3 thin film, a LiTaO3 thin film, a Ta2O5 thin film, a ZnO thin film, an AlN film, an Al2O3 thin film, or a glass thin film, the dielectric thin film 5, piezoelectric thin film 5 or metal thin film 5 is a SiO2 thin film, an AlN thin film, an Al2O3 thin film, a diamond film, a SiC thin film, a Si3N4 thin film, a LiNbO3 thin film, a LiTaO3 thin film, a beryllium metal thin film, Si, a dielectric thin film, piezoelectric thin film or metal/semiconductor thin film having a larger transverse wave velocity than that of the dielectric thin film 4.
Example 4
Example 4 is the elastic boundary wave substrate, and the functional element using the elastic boundary wave substrate according to claim 1, 2 or 3, having a structure wherein the metal thin film 2 or the electrode film 3 is an Al thin film, a Cu thin film, a Au thin film, a Ag thin film, a Mo thin film, a W thin film, a Rh thin film, a Pt thin film, a Pb thin film, and an alloy thereof.
Example 5
Example 5 is the elastic boundary wave substrate, and the functional element using the elastic boundary wave substrate according to claim 1, 2, 3 or 4, having a structure wherein plural thin films, such as the thin film 6 and thin film 7, are adhered onto the thin film 5, or having a structure wherein thin films are used in the manner that the transverse wave velocities of (the) thin films 6 to N are larger than the transverse wave velocity of the thin film 4 (see, e.g., FIG. 21).
Example 6
Example 6 is the elastic boundary wave substrate, and the functional element using the elastic boundary wave substrate according to claim 1, 2, 3, 4 or 5, having a structure wherein the thin film 4 is a SiO2 thin film or thin film made of glass or the like, this thin film having a temperature characteristic of frequency reverse to that of the substrate, the thin film 5 is an AlN thin film, Al2O3 thin film or SiC thin film, the metal film 2 or the electrode film 3 is an Al thin film, Cu thin film, Au thin film, or Ag thin film, and the piezoelectric substrate 1 is a −10 to 70° rotated Y—X propagation LiNbO3 substrate, or a 30 to 60° rotated Y—X propagation LiTaO3 substrate.
Example 7
Example 7 is the elastic boundary wave substrate, and the functional element using the elastic boundary wave substrate according to claim 1, 2, 3, 4, 5 or 6, wherein when the wavelength of the central frequency of the boundary wave is represented by λ and the film thickness of the metal electrode film 2 or 3 is represented by H2/λ or H3/λ, respectively, the value thereof ranges from 0.005 to 0.25; when the film thickness of the dielectric film 4 is represented by H4/λ, the value thereof ranges from 0.005 to 3.5; when the film thickness of the dielectric film 5 is represented by H5/λ, the value thereof ranges from 0.005 to 3.5; and the film thickness of the thin films over the thin film 5 is represented by H6-N/λ, the value thereof ranges from 0.00 to 3.5.
Example 8
Example 8 is the elastic boundary wave substrate, and the functional element using the elastic boundary wave substrate according to claim 1, 2, 3, 4, 5, 6 or 7, wherein a thin film 11 having a smaller transverse wave velocity than that of the thin film 4 and having a film thickness ratio Hsd/λ of 0.005 to 0.200 is adhered onto between the metal film 2 or the interdigital electrode 3 and the thin film 4, and further the thin film 4, the thin film 5 and the thin films H6—N are adhered thereonto, or the thin film 11 has a grating structure.
Example 9
Example 9 is the elastic boundary wave substrate, and the functional element using the elastic boundary wave substrate according to claim 1, 2, 3, 4, 5, 6, 7 or 8, wherein a thin film 22 having a larger transverse wave velocity than that of the thin film 4 and having a film thickness ratio Hhd/λ of 0.005 to 0.200 is adhered onto between the metal film 2 or the interdigital electrode 3 and the thin film 4, and further the thin film 4, the thin film 5 and (the) thin films H6-N are adhered thereonto, or the thin film 11 has a grating structure.
Example 10
Example 10 is the elastic boundary wave substrate, and the functional element using the elastic boundary wave substrate according to claim 1, 2, 3, 4, 5, 6, 7, 8 or 9, wherein a thin film 33 having a larger transverse wave velocity than that of the thin film 4 and having a film thickness ratio Hhd/λ of 0.005 to 0.200 is adhered onto between the metal film 2 or the interdigital electrode 3 and the thin film 4, and further the thin film 4 is adhered thereonto, or the thin film 11 has a grating structure.
Example 11
Example 11 is the elastic boundary wave substrate, and the functional element using the elastic boundary wave substrate according to claim 1, 2, 3, 4, 5, 6, 7, 8, 9 or 10, having a structure wherein the process for producing the thin film 4, the thin film 5, (the) thin films H6-N, and the thin films 11, 22 and 33 is a resistance-heating vapor deposition process, a sputtering process, a process of applying a solution to the surface of the substrate by spin-coating, and then subjecting the applied solution to thermal decomposition, thereby producing target one of the thin films, or an MOCVD process.
Example 12
Example 12 is the elastic boundary wave substrate, and the functional element using the elastic boundary wave substrate according to claim 1, 2, 3, 4, 5, 6, 7, 8, 9, 10 or 11, having a structure wherein the structure of the electrode 3 is a resonator having a reflecting electrode, an interdigital electrode resonator, a unidirectional interdigital electrode, or a distributed type interdigital electrode.
EFFECTS OF THE INVENTION
FIG. 3 shows displacement distributions of a substrate having an Al/SiO2/Al/Y—X LiNbO3 structure as an example of the above-mentioned substrates. In the figure, the respective film thicknesses are as follows: H2/λ=0.05, H4/λ=0.8, and H5/λ=2.0. In this case, characteristics that the electromechanical coupling coefficient k2=0.10 and the temperature characteristic of frequency (TCF)=−7 ppm/° C. are obtained. It is understood that energy is concentrated to the electrode section and the thin film section on the substrate. FIG. 4 shows displacement distributions of a substrate having an AlN/SiO2/Cu/128° Y—X LiNbO3 structure. In the figure, H2, H3/λ=0.05, H4/λ=1.0, and H5/λ=2.0. In this case, characteristics that k2=0.055 and the temperature characteristic of frequency (TCF)=−22 ppm/° C. are obtained. It is understood from the figure that energy is concentrated to the electrode section and the thin film section on the substrate.
FIG. 5 shows displacement distributions of a substrate having an AlN/SiO2/Cu/36° Y—X LiTaO3 structure. In the figure, H2, H3/λ=0.05, H4/λ=0.6, and H5/λ=1.5 to 2.0. In this case, characteristics that k2=0.056 and the temperature characteristic of frequency (TCF)=−0 ppm/° C. are obtained. It is understood from the figure that energy is concentrated to the electrode section and the thin film section on the substrate.
FIG. 6 is a chart showing a area where an elastic boundary wave exists in an AlN/SiO2/each of Al, Cu, Ag and Au/Y—X LiNbO3 substrate. The electrode of each of Au, Ag, Cu and Al is used as a parameter, the transverse axis represents the electrode film thickness ratio H2/λ or H3/λ, and the vertical axis represents the SiO2 film thickness ratio H4/λ. FIG. 6 shows each curve showing the existing area when the ratio H5/λ of AlN film thickness and λ is set into the range of 1.0 to 2.0. The direction of each arrow in the figure shows a area where an elastic boundary wave exists. In the case of, for example, the Al electrode, it is shown that under the condition that H2/λ is 0.05, an elastic boundary wave area exists when the ratio H4/λ of SiO2 film thickness and λ is 0.45 or more.
When an AlN thin film where H5/λ is from 1.0 to 2.0 is used, as the thin film 5, for a metal of an AlN/SiO2/electrode/Y—X LiNbO3 substrate where the electrode film thickness H2, H3/λ is 0.05, the kind of the metal being various, the temperature characteristic of frequency (TCF) relative to the film thickness ratio H4/λ of the SiO2 thin film is shown in FIG. 7. It is understood from the figure that about Au, zero frequency temperature-characteristic is not obtained while about the Cu electrode, a zero frequency temperature-characteristic is obtained when the SiO2 film H4/λ is 1.2. The results are obtained when each of Al, Cu, Ag and Au is used as the electrode film and SiO2 and AlN films are used as the dielectric films. However, the same boundary wave is obtained in a case where the transverse wave velocity of the thin film 5 is larger than that of the thin film 4. Thus, the case is also in the present patent.
In the above-mentioned example, analysis was made on the boundary wave in a case where the film thickness ratio H5/λ of the topmost thin film AlN is sufficiently large, which is from 1.0 to 2.0; for a practical device, however, required is a device where the film thickness of the topmost area, which is to be a boundary wave, is as small as possible. Shown are analysis results and experimental results of the minimum film thickness that permits a boundary wave to exist in the range recited as the film thickness of the topmost area in claim 7, that is, in the range of H5/λ from 0.005 to 3.5.
FIG. 8 is a chart showing, in an AlN/SiO2/Al/Y—X LiNbO3 substrate, each change in the propagation velocity relative to the AlN film thickness when HAl/λ is 0.05. In a case where the SiO2 film thickness ratio HSiO2/λ is about 0.4 or less, a area where a change in the propagation velocity relative to a change in the AlN film thickness is constant is not present in a area smaller than the slow transverse wave, and thus no boundary wave exists; in a case where the SiO2 film thickness HSiO2/λ is 0.5 or more, an area where a change in the propagation velocity relative to a change in the AlN film thickness is substantially constant is present when the film thickness ratio HAlN/λ is 0.5 or more, and thus a boundary wave exists; and an AlN film 0.5 or more in HAlN/λ is unnecessary. Besides these matters, a matter that a thick film is adhered onto the topmost area produces an adverse effect on the substrate, for example, the boundary wave substrate is cracked or the topmost film is cracked or peeled. Therefore, when HAlN/λ is set to 0.5, which is as small a value as possible, an optimal substrate is obtained.
FIG. 9 shows, in an AlN/SiO2/Cu/Y—X LiNbO3 substrate, each change in the propagation velocity relative to the AlN film thickness when HCu/λ is 0.04. In a case where the SiO2 film thickness ratio HSiO2/λ is about 0.15 or less, no boundary wave exists; and in a case where the SiO2 film thickness ratio HSiO2/λ is 0.2 or more, a change in the propagation velocity relative to HCu/λ is hardly caused when the film thickness ratio HAlN/λ is 0.4 or more, so that a boundary wave is generated and thus an AlN film with HAlN/λ of 0.4 or more is unnecessary. Besides these matters, a matter that a thick film is adhered produces an adverse effect on the substrate, for example, the boundary wave substrate is cracked or the topmost film is cracked or peeled. Therefore, when HA is set to 0.4, which is as small a value as possible, an optimal substrate is obtained.
FIG. 10 shows, in an AlN/SiO2/Cu/10° Y—X LiNbO3 substrate, each change in the propagation velocity relative to the AlN film thickness when HCu/λ is 0.03. In a case where the SiO2 film thickness ratio HSiO2/λ is about 0.25 or less, no boundary wave exists; and in a case where the SiO2 film thickness ratio HSiO2/λ is about 0.35 or more, a change in the propagation velocity relative to a change in the film thickness ratio HAlN/λ is hardly caused when the film thickness ratio HAlN/λ is 0.45 or more, so that a boundary wave is generated and thus an AlN film 0.5 or more in HAlN/λ is unnecessary. Besides these matters, a matter that a thick film is adhered produces an adverse effect on the substrate, for example, the boundary wave substrate is cracked or the topmost film is cracked or peeled. Therefore, when H/λ is set to 0.5, which is as small a value as possible, an optimal substrate is obtained.
FIG. 11 shows, about an AlN/SiO2/Cu/Y—X LiNbO3 substrate, each minimum value of the topmost AlN film relative to the SiO2 film thickness for obtaining a boundary wave, or each relationship between AlN and the SiO2 minimum film thicknesses for obtaining a boundary wave in the substrate, using HCu/λ (the expression “Cu=0.1” in the figure corresponds to “HCu/λ=0.1”) as a parameter, when the condition for obtaining the boundary wave is rendered a condition as shown as a plotting condition, that is, when the value of a change in the velocity (v1+1−vi)/vi relative to a change in the AlN film (Hi/λ−Hi+1/λ) is set to 10−3. The figure shows that a boundary wave exists above the curve. When the SiO2 film thickness ratio HSiO2/λ and the HCu/λCu are, for example, 0.5 and 0.05, respectively, it is shown that a range where HAlN/λ is 0.45 or more is a range where a boundary wave exists.
FIG. 12 shows, about an AlN/SiO2/Cu/36° Y—X LiTaO3 substrate, each minimum value of the topmost AlN film relative to the SiO2 film thickness for obtaining a boundary wave, or each relationship between AlN and the SiO2 minimum film thicknesses for obtaining a boundary wave in the substrate, using HCu/λ (the expression “Cu=0.3” in the figure corresponds to “HCu/λ=0.375”) as a parameter when the condition for obtaining the boundary wave is rendered a condition as shown as a plotting condition, that is, when the value of a change in the velocity (vi+1−vi)/vi relative to a change in the AlN film (Hi/λ−Hi+1/λ) is set to 10−3. The figure shows that a boundary wave exists above the curve. When the SiO2 film thickness ratio HSiO2/λ and the HCu/λCu are, for example, 0.4 and 0.0.0375, respectively, it is shown that a range where HAlN/λ is 0.5 or more is a range where a boundary wave exists.
FIG. 13 shows experimental results of a resonator using an AlN/SiO2/Cu electrode/Y—X LiNbO3 substrate, and shows a change in the resonance central frequency when Cu with H3/λ of 0.04 is used as the electrode 3, SiO2 with H4/λ of 0.225 is adhered as the thin film 4 thereon, an AlN thin film is adhered as the thin film 5 thereon and further the film thickness ratio H5/λ is being made larger. It is understood that when H5/λ is 0.5 or more, the central frequency is hardly changed and the displacement of the AlN surface is substantially zero so that an elastic boundary wave is generated.
FIG. 14 shows the frequency characteristic of the admittance of the elastic boundary wave resonator shown in FIG. 13.
It is understood from the figure that a good resonance characteristic is obtained. No characteristic change is caused even when a resist large in propagation attenuation is adhered onto the AlN surface.
FIG. 15 shows experimental results of a resonator using an AlN/SiO2/Cu electrode 36° Y—X LiTaO3 substrate, and shows the frequency characteristic of the admittance when Cu with H3/λ of 0.037 is used as the electrode 3, SiO2 with H4/λ of 0.25 is adhered as the thin film 4 thereon, an AlN thin film is adhered as the thin film 5 thereon and further the film thickness ratio H5/λ is being made larger. A change relationship is hardly generated between the characteristic of the case of adhering a photoresist film large in propagation loss, into a thickness of 3 μm, onto the surface of the substrate with HAlN/λ of 0.78 (AlN=6.3 μm) and that of the case of not adhering the same photoresist film; therefore, it is understood that in the topmost area surface, a boundary wave which hardly gives a displacement is generated. It is understood that in this case also, the film thickness of the topmost area is sufficient, that is, HAlN/λ is 0.78. In the case of this substrate, an unnecessary wave is hardly generated; thus, according to a rotated Y—X LiTaO3 substrate, such a good filter characteristic that an unnecessary wave is not generated can easily be obtained.
FIG. 16 shows experimental results of a unidirectional filter interdigital electrode filter using a TeO2 thin filter λ/4 grating thin-film reflector. Its substrate has an AlN/SiO2/TeO2 grating thin film/Y—X LiNbO3 structure, and the AlN thin film, the SiO2 film thickness, and the Cu electrode film thickness are 5.6λ, 0.3λ and 0.03λ, respectively. Thus, a good unidirectional characteristic and a low loss characteristic are obtained.
FIG. 17 shows each temperature characteristic of the frequency of a boundary wave in a case where: in connection with claim 10, electrode films 2 and 3 are adhered onto the substrate 1 in a rotated Y—X propagation manner; an AlN thin film 22 having a larger transverse wave velocity than that of the thin film 4, wherein Hhs/λ as a parameter is set to each of values 0.0, 0.05, 0.075 and 0.1, is adhered thereon; a SiO2 thin film is adhered thereon to set H/λ into the range of 0 to 2.0; and an AlN film is adhered thereon to set H/λ to 1.5. It is understood that the SiO2 film thickness at which a zero frequency temperature-characteristic is obtained can be obtained at a half of the value in a case where the AlN 22 is zero.
The above has described the case of using AlN as the thin film larger in transverse wave velocity than the thin film 4; however, when various thin films larger in transverse wave velocity than the thin film 4 are used, the same results are obtained. Thus, combination of different thin films are also included in the present patent.
FIG. 18 shows simulation results of the electromechanical coupling coefficient k2 and the temperature characteristic of frequency (TCF) when H2, H3/λ=0.02, H5/λ=2.0 and H4 is changed in AlN/SiO2/Cu/Y—X LiNbO3. It is understood that the film thickness ratio H4/λ when the TCF is zero is 1.05 and the electromechanical coupling coefficient k2 at this time is about 0.09.
FIG. 19 shows simulation results of the electromechanical coupling coefficient k2 and the temperature characteristic of frequency (TCF) when H2, H3/λ=0.05, H5/λ=2.0 and H4 is changed in AlN/SiO2/Cu/128° Y—X LiNbO3. It is understood that the film thickness ratio H4/λ when the TCF is zero is 1.35 and the electromechanical coupling coefficient k2 at this time is about 0.035.
FIG. 20 shows simulation results of the electromechanical coupling coefficient k2 and the temperature characteristic of frequency (TCF) when H2, H3/λ=0.05, H5/λ=2.0 and further H4 is changed in AlN/SiO2/Cu/36° Y—X LiTaO3. It is understood that the film thickness ratio H4/λ when the TCF is zero is 0.6 and the electromechanical coupling coefficient k2 at this time is about 0.06.

## Claims

1. An elastic boundary wave functional element comprising:
a LiNbO3 substrate;
a film electrode formed above the LiNbO3 substrate;
a SiO2 film formed above the film electrode; and
a thin film formed above the SiO2 film, the thin film having a transverse wave velocity larger than that of SiO2 film,
wherein the film electrode has a ratio H2/λ or H3/λ that is 0.05 or more, symbol H2 representing a film thickness of the film electrode, symbol λ representing the wavelength of the central frequency of the boundary wave,
wherein the SiO2 film has a ratio H4/λ that is 0.4 or more and 1 or less, symbol H4 representing a film thickness of the SiO2 film,
wherein the thin film has a ratio H5/λ, symbol H5 representing a film thickness of the thin film,
wherein the functional element is structured and arranged such that when an energy radiation exists in the thickness direction of the substrate, and
an energy exists in the surface of the thin film,
the energy radiation in the thickness direction of the substrate is 1⁄8 or less of the whole energy, and the energy of the surface of the thin film is 1⁄8 or less of the whole energy, and
wherein SV wave energy is larger than SH wave energy at a boundary between the LiNbO3 substrate and the SiO2 film.

2. The elastic boundary wave functional element according to claim 1, wherein the film electrode is made from copper.

3. The elastic boundary wave functional element according to claim 1, wherein the LiNbO3 substrate is a 120-136° rotated Y—X propagation LiNbO3 substrate.

4. The elastic boundary wave functional element according to claim 1, wherein the ratio H5/λ is 1 or more and 2 or less.