Proposed Rule:Electronics ManufacturingEPA Climate Change Division*This training is provided solely for informational purposes. It does not provide legaladvice, have legally bindingeffect, or expressly or implicitly create, expand, or limit any legal rights, obligations, responsibilities, expectations,or benefits in regard to any person.,Electronics ManufacturingProposal: Background•Electronics manufacturing included in the Proposal onAdditional Sources of Fluorinated GHGs• Proposal Signed bythe Administrator on March 22,2010•Proposal published in the Federal Register on April 12,2010–60 day comment period ends on June 11, 2010Public Hearing on April 20 2010 in Washington DC•Public Hearing on April 20,2010 in Washington,DCElectronics ManufacturingProposal: Threshold Methods•Proposed emissions-based threshold: 25,000based threshold: 25,000mtCO2e/year with no abatementEl iP d Th h ld D i iectronicsEmission SourceProposed Threshold DeterminationMethodSemiconductorsIPCC Tier 1 methodA+ heat transfer fluids (10% of total cleanand etch emissions); no abatementMEMSIPCC Tier 1 methodA,B; no abatementLCDIPCC Tier 1 methodA; no abatementIPCC Tier 1 method; no abatementPVMultiply gas purchases/consumption by the appropriate 100-year GWP; no abatementAAssume 100 percent manufacturing capacity; manufacturingcapacity= the facility’s fullplanned designed capacity.BEmission factor was derived using the IPCC Tier 1 SF6emission factor for semiconductors.ttElectronics ManufacturingProposal: Emissions EstimatingMethods•Semiconductor Manufacturing- Refined Method–Refined process categories and default emission factors•Permits direct measurement of process emission factors where available–Gas-and facility-specific heel factors to determine gas consumption• Engineering model for apportioning gas use by process category•Other Electronics Manufacturing- Modified IPCC Tier 2bMethod–Default emission factors for 2 broad categories (clean and etch)–Also includes gas-and facility-specific heel factors•All El i M f iAll ElectronicsManufacturing–Emissions from heat transfer fluids•Mass-balance methodEii f NO–EmissionsfromN2processes• Default factors or facility measurementstttt t t tElectronics ManufacturingProposal: Reporting ControlledEmissions•To report controlled emissions:To report controlled emissions:–Requires certification that the abatement device isinstalled, operated, and maintained according tof ’ ifi i d ithmanufacturers’specificationsandeither:(A)EPA default value of 60%, accounting for uptime–Certification that the abatement system is specifically designedf FGHG d NO bor-GHGand N2aatement(B)Measurement using EPA DRE Protocol, accounting foruptime–Permitsapplilicationof DREvaluesto abatementsystem““classes”using a random sampling protocol•Minimum of 3 or 20% of abatement system class measuredpyerearfgEPA pr•oposed nine process categories for each wafer size (i.e., 150mm, 200 mm, and 300 mm)oposed nine process categories for each wafer size (i.e., 150Selected Excerpts from Proposal:Semiconductor Manufacturing–See Tables I-6, I-7, I-8 (pg. 18705-18708)•EPA is proposing a range of values for each default emissionfactor because the Agency has not yet received sufficient data toselect a specific value within each range(pg. 18662).•In a final rule, EPA intends to publish default emission factors forgas utilization and by-product formation rates for each processcategory, differentiating amongst 150 mm, 200 mm and 300 mmwafer technology to the extent feasible (pg. 18662).Selected Excerpts from Proposal:Semiconductor Manufacturing,cont.• Request for additional data (utilization and byproduct formation rates)–the date of measurement,–achievement of fluorine mass balance,–associated standard deviations of measured factors,–the relevant emissions process types and categories (for theqypand information including but not limited to:–the specific measurement method used(e.g., measurement using the 2006ISMI Guidelines),the date of measurementthe relevant emissions process types and categories (for thepatterning/etching process type noting both film type and etched featurewhere applicable),–substrate size (i.e., 150 mm, 200 mm, or 300 mm),h b f f d i hd–thenumberofwafers used in themeasurementstuy,–and the equipment manufacturer name and model number where notconsidered confidential (pg. 18663).wafe tec o wit t e ts based o t e a et et atioSelected Excerpts from Proposal:Semiconductor Manufacturing,cont.•Using additional data received,EPA intends to develop defaultemission factors for each process category using a method ofaggregation similar to the 2006 IPCC factor developmentmethodology (pg. 18663).•If additional data are received in a timely fashion, EPA may developdraft emission factors prior to issuance of the final rule and willdetermine an appropriate way to promptly and clearly inform theregulated community (pg. 18663).regulated community (pg. 18663).•In developing emission factors for the final rule, EPA is alsoconsidering developing weighted average emission factors, for eachwafertechnology, withthe weights based onthemarket penetrationlogy,weigrates of process recipes used in current device manufacturingpractices. Such weighted emissionfactors, if possible, may betterrepresent actual emissions from installed manufacturing equipmentand operating processes We request comment on using a weightingand operating processes.We request comment on using a weightingscheme and detailed information on how it would be developed andimplemented (pg. 18663)nFor Further Information• See EPA’s website at:– http://www.epa.gov/climatechange/emissions/subpart/fgas.html• Preamble and regulatory textTechnical backgro d doc ments•Technical background documents• Information and Fact Sheets•Docket ID number:Docket ID number:– EPA-HQ-OAR-2009-0927–Access via: http://www.regulations.govAccess via: http://www.regulations.gov• Email:GHGMRR@epa.gov*This training is provided solely for informational purposes. It does not provide legaladvice, have legally bindingeffect, or expressly or implicitly create, expand, or limit any legal rights, obligations, responsibilities, expectations,or benefits in regard to any person.